Effect of phosphorus on hot ductility of high purity iron

International Nuclear Information System (INIS)

Abiko, K.; Liu, C.M.; Ichikawa, M..; Suenaga, H.; Tanino, M.

1995-01-01

Tensile tests on high purity Fe-P alloys with 0, 0.05 and 0.1 mass%P were carried out at temperatures between 300 K and 1073 K to clarify the intrinsic effect of phosphorus on the mechanical properties of iron at elevated temperatures. Microstructures of as-quenched, interrupted and ruptured specimens were observed. Experimental results show that the addition of phosphorus causes a remarkable increase in proof stress of high purity iron at 300 K, but the increase in proof stress by phosphorus decreases with increasing test temperature. The strengthening effect of phosphorus reduces to zero at 1073 K. High purity iron and Fe-P alloys rupture at almost 100% reduction in area at the whole test temperatures. However, Fe-P alloys show much larger elongation at test temperatures above 773 K than high purity iron. The increased elongation of high purity iron by addition of phosphorus was shown to be related to the effect of phosphorus on dynamic recovery and recrystallization of iron as its intrinsic effect. (orig.)

Fabrication of high quality anodic aluminum oxide (AAO) on low purity aluminum—A comparative study with the AAO produced on high purity aluminum

International Nuclear Information System (INIS)

Michalska-Domańska, Marta; Norek, Małgorzata; Stępniowski, Wojciech J.; Budner, Bogusław

2013-01-01

Highlights: • Nanoporous alumina was fabricated by anodization in sulfuric acid solution with glycol. • The AAO manufacturing on low- and high-purity Al was compared. • The pores size was ranging between 30 and 50 nm. • No difference in the quality of the AAO fabricated on both Al types was observed. • The current vs. anodization time curves were recorded. -- Abstract: In this work the quality, arrangement, composition, and regularity of nanoporous AAO formed on the low-purity (AA1050) and high-purity aluminum during two-step anodization in a mixture of sulfuric acid solution (0.3 M), water and glycol (3:2, v/v), at various voltages (15, 20, 25, 30, 35 V) and at temperature of −1 °C, are investigated. The electrochemical conditions have allowed to obtain pores with the size ranging from 30 to 50 nm, which are much larger than those usually obtained by anodization in a pure sulfuric acid solution (<20 nm). The mechanism of the AAO growth is discussed. It was found that with the increase of applied anodizing voltage a number of incorporated sulfate ions in the aluminum oxide matrix increases, which was connected with the appearance of an unusual area in the current vs. time curves. On the surface of anodizing low- and high-purity aluminum, the formation of hillocks was observed, which was associated with the sulfate ions incorporation. The sulfate ions are replacing the oxygen atom/atoms in the AAO amorphous crystal structure and, consequently, the AAO template swells, the oxide cracks and uplifts causing the formation of hillocks. The same mechanism occurs for both low- and high-purity aluminum. Nanoporous AAO characterized by a very high regularity, not registered previously for low purity aluminum, was obtained. Furthermore, no significant difference in the regularity ratio between the AAO obtained on low- and high-purity aluminum, was observed. The electrochemical conditions applied in this study can be, thus, used for the fabrication of high quality

Preparation of high-purity cerium nitrate

International Nuclear Information System (INIS)

Avila, Daniela Moraes; Silva Queiroz, Carlos Alberto da; Santos Mucillo, Eliana Navarro dos

1995-01-01

The preparation of high-purity cerium nitrate has been carried out Cerium oxide has been prepared by fractioned precipitation and ionic exchange techniques, using a concentrate with approximately 85% of cerium oxide from NUCLEMON as raw material. Five sequential ion-exchange columns with a retention capacity of 170 g each have been used. The ethylenediamine-tetraacetic acid (EDTA) was used as eluent. The cerium content has been determined by gravimetry and iodometry techniques. The resulting cerium oxide has a purity > 99%. This material was transformed in cerium nitrate to be used as precursor for the preparation of Zirconia-ceria ceramics by the coprecipitation technique. (author)

Low-cost high purity production

Science.gov (United States)

Kapur, V. K.

1978-01-01

Economical process produces high-purity silicon crystals suitable for use in solar cells. Reaction is strongly exothermic and can be initiated at relatively low temperature, making it potentially suitable for development into low-cost commercial process. Important advantages include exothermic character and comparatively low process temperatures. These could lead to significant savings in equipment and energy costs.

Recovery of high-purity hydrogen from COG

Energy Technology Data Exchange (ETDEWEB)

Tsukiyama, Y

1982-01-01

A general account of the latest trends in the recovery of high-purity hydrogen from coke oven gas (COG), the article being based on both Japanese and overseas literature: 1) Deep-freeze separation: impurities are liquefied and removed. This method make use of the fact that hydrogen is hard to liquefy. 2) The PSA method: high-purity hydrogen is recovered by the adsorption of other constituents at high pressures. This technique makes use of the fact that the adsorption capacity of an adsorbent varies with the partial pressure of the substances being adsorbed. 3) Membrane separation: a permeation separation method that uses a functional polymer separation membrane, and that depends on the fact that hydrogen has a low molecular weight in comparison with the other constituents. (19 refs.) (In Japanese)

Establishing comparability and compatibility in the purity assessment of high purity zinc as demonstrated by the CCQM-P149 intercomparison

Science.gov (United States)

Vogl, Jochen; Kipphardt, Heinrich; Richter, Silke; Bremser, Wolfram; del Rocío Arvizu Torres, María; Manzano, Judith Velina Lara; Buzoianu, Mirella; Hill, Sarah; Petrov, Panayot; Goenaga-Infante, Heidi; Sargent, Mike; Fisicaro, Paola; Labarraque, Guillaume; Zhou, Tao; Turk, Gregory C.; Winchester, Michael; Miura, Tsutomu; Methven, Brad; Sturgeon, Ralph; Jährling, Reinhard; Rienitz, Olaf; Mariassy, Michal; Hankova, Zuzana; Sobina, Egor; Ivanovich Krylov, Anatoly; Anatolievich Kustikov, Yuri; Vladimirovich Smirnov, Vadim

2018-04-01

For the first time, an international comparison was conducted on the determination of the purity of a high purity element. Participants were free to choose any analytical approach appropriate for their institute’s applications and services. The material tested was a high purity zinc, which had earlier been assessed for homogeneity and previously used in CCQM-K72 for the determination of six defined metallic impurities. Either a direct metal assay of the Zn mass fraction was undertaken by EDTA titrimetry, or an indirect approach was used wherein all impurities, or at least the major ones, were determined and their sum subtracted from ideal purity of 100%, or 1 kg kg-1. Impurity assessment techniques included glow discharge mass spectrometry, inductively coupled plasma mass spectrometry and carrier gas hot extraction/combustion analysis. Up to 91 elemental impurities covering metals, non-metals and semi-metals/metalloids were quantified. Due to the lack of internal experience or experimental capabilities, some participants contracted external laboratories for specific analytical tasks, mainly for the analysis of non-metals. The reported purity, expressed as zinc mass fraction in the high purity zinc material, showed excellent agreement for all participants, with a relative standard deviation of 0.011%. The calculated reference value, w(Zn)  =  0.999 873 kg kg-1, was assigned an asymmetric combined uncertainty of  +0.000 025 kg kg-1 and  -0.000 028 kg kg-1. Comparability amongst participating metrology institutes is thus demonstrated for the purity determination of high purity metals which have no particular difficulties with their decomposition/dissolution process when solution-based analytical methods are used, or which do not have specific difficulties when direct analysis approaches are used. Nevertheless, further development is required in terms of uncertainty assessment, quantification of non-metals and the determination of purity

Growth of high purity semiconductor epitaxial layers by liquid phase ...

Indian Academy of Sciences (India)

Unknown

semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such ... reference to the growth of GaAs layers. The technique of growing very high purity layers ... the inner walls of the gas lines and (e) the containers for storing, handling and cleaning of the mate-.

Thermal and electrical conductivities of high purity tantalum

International Nuclear Information System (INIS)

Archer, S.L.

1978-01-01

The electrical resistivity and thermal conductivity of three high purity tantalum samples have been measured as functions of temperature over a temperature range of 5K to 65K. Sample purities ranged up to a resistivity ratio of 1714. The highest purity sample had a residual resistivity of .76 x 10 -10 OMEGA-m. The intrinsic resistivity varied as T 3 . 9 from 10K to 31K. The thermal conductivity of the purest sample had a maximum of 840 W/mK at 9.8K. The intrinsic thermal resistivity varied as T 2 . 4 from 10K to 35K. At low temperatures electrons were scattered primarily by impurities and by phonons with both interband and intraband transitions observed. The electrical and thermal resistivity is departed from Matthiessen's rule at low temperatures

Development of high purity niobium material for superconducting cavities

International Nuclear Information System (INIS)

Umezawa, Hiroaki; Takeuchi, Koichi; Sakita, Kohei; Suzuki, Takafusa; Saito, Kenji; Noguchi, Shuichi.

1993-01-01

For the superconducting niobium cavities, issues of thermal quench and field emission have to be solved to achieve a high field gradient (>25MV/m) for TESLA (TeV Energy Superconducting Linear Accelerator). In order to overcome the quench, upgrading of thermal conductivity of niobium material at the low temperature is very important. On the reduction of the field emission not only dust particles but also defect, impurity and inhomogeneity should be considered. Therefore development of high purity niobium material is very important to solve these issues. This paper describes the our latest R and D for high purity niobium material. (author)

Production of high purity radiothallium

International Nuclear Information System (INIS)

Lebowitz, E.; Greene, M.W.

1976-01-01

The method of producing high-purity thallium-201 for use as a myocardial scanning agent comprises the steps of irradiating a thallium target with protons to give the reaction 203 Tl(p,3n) 201 Pb, separating in ion exchange columns the lead from the thallium isotopes, permitting the lead to decay, and then purifying the thallium solution and converting the thallium present to thallous form in which it can be used

The Research about Preparation of High Purity Hexachlorodisilane

Science.gov (United States)

Wan, Ye; Zhao, Xiong; Yan, Dazhou; Zhao, Yu; Guo, Shuhu; Wang, Lei; Yang, Dian

2017-12-01

This article demonstrated a technology for producing high purity hexachlorodisilane what is one raw material of Semiconductor industry, which using the method of combination adsorption with rectification, whose material was from polysilicon residues of polysilicon company. This technology could remove most high boiling points chloro-silicane impurities and metal impurities effectively. The purity of Si2Cl6 produced by this technology can be up to 99.9%, the content of metal impurities can be low at 4ppb, which can meet the requirement of industy using completely. The technology extends the routes of Si2Cl6 in localization, having the advantages of simple process, continuous operation, and large capacity and so on.

Analytical monitoring of systems for the production of high-purity, desalinated water

International Nuclear Information System (INIS)

Kunert, I.

1988-01-01

The purity requirements to be met by high-purity water currently push the most sensitive analytical methods to their utmost limits of sensitivity. The required degree of purity of the water at present can only be achieved by application of membrane processes, and pre-purification of the feedwater to a quality corresponding to that of the raw water source. The contribution in hand discusses the analytical monitoring of the raw water treatment plant, the water treatment prior to the treatment by reverse osmosis, monitoring and control of the modules for reverse osmosis, and the monitoring of high-purity water production for the microelectronics industry. (orig./RB) [de

Characterisation of two AGATA asymmetric high purity germanium capsules

International Nuclear Information System (INIS)

Colosimo, S.J.; Moon, S.; Boston, A.J.; Boston, H.C.; Cresswell, J.R.; Harkness-Brennan, L.; Judson, D.S.; Lazarus, I.H.; Nolan, P.J.; Simpson, J.; Unsworth, C.

2015-01-01

The AGATA spectrometer is an array of highly segmented high purity germanium detectors. The spectrometer uses pulse shape analysis in order to track Compton scattered γ-rays to increase the efficiency of nuclear spectroscopy studies. The characterisation of two high purity germanium detector capsules for AGATA of the same A-type has been performed at the University of Liverpool. This work will examine the uniformity of performance of the two capsules, including a comparison of the resolution and efficiency as well as a study of charge collection. The performance of the capsules shows good agreement, which is essential for the efficient operation of the γ-ray tracking array

Characterisation of two AGATA asymmetric high purity germanium capsules

Energy Technology Data Exchange (ETDEWEB)

Colosimo, S.J., E-mail: sjc@ns.ph.liv.ac.uk [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Moon, S.; Boston, A.J.; Boston, H.C.; Cresswell, J.R.; Harkness-Brennan, L.; Judson, D.S. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Lazarus, I.H. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Nolan, P.J. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Simpson, J. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Unsworth, C. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom)

2015-02-11

The AGATA spectrometer is an array of highly segmented high purity germanium detectors. The spectrometer uses pulse shape analysis in order to track Compton scattered γ-rays to increase the efficiency of nuclear spectroscopy studies. The characterisation of two high purity germanium detector capsules for AGATA of the same A-type has been performed at the University of Liverpool. This work will examine the uniformity of performance of the two capsules, including a comparison of the resolution and efficiency as well as a study of charge collection. The performance of the capsules shows good agreement, which is essential for the efficient operation of the γ-ray tracking array.

Neutron activation analysis of high purity silver using high resolution gamma-spectrometry

International Nuclear Information System (INIS)

Gilbert, E.N.; Veriovkin, G.V.; Botchkaryov, B.N.; Godovikov, A.A.; Zhavoronkov, V.Ya.; Mikhailov, V.A.

1975-01-01

A method of neutron activation determination of microimpurities in high purity silver has been developed. For matrix activity separation the extraction of silver by dibuthylsulfide /DBS/ was employed. The purification coefficient was 10 8 after triple extraction. To study the behaviour of microimpurities in the extraction procedure and to determine their chemical yields some tracer experiments were undertaken with radionuclides of Na, Se, Fe, Co, Cu, As, Sc, Te, Zr, Hf, Mo, W, Cd, In, Sb, La, Ce, Eu, Ta, Re, Ir, Ru. All the elements studied were found to remain in the aqueous phase up to 96-99% after triple extraction with DBS. To estimate the accuracy of the method and to study the mutual influence of the elements in the sample in various relative amounts on the accuracy of the analysis, a number of experiments of ''added-found'' type was performed and the results were treated statistically. In these experiments model mixtures of 30 nuclides were analysed after triple DBS extraction. The t-criterion values for the confidence interval at P=0.95 show the absence of systematic errors. Variation coefficient values do not exceed 15%. Using Ge/Li/ detector it was possible to determine 30 elements simultaneously in silver samples. (T.G.)

High purity in steels as a criterion for materials development

International Nuclear Information System (INIS)

Jacobi, H.

1995-01-01

This summarizing report discusses the materials and application prospects for higher purity in steels, which will make possible further advances in materials behaviour and workability. Improvements in purity and homogeneity permit in particular more rational production of thin foils and wire, one-piece shaping of complicated bodywork components and the drawing, wall-ironing and flanging of two-piece beverage cans. Welded designs in plant and mechanical engineering can be fabricated with less effort and less weight. Difficult component geometries and shaping processes can be more easily mastered. Steels with optimized fracture toughness can be exposed to more extreme loads at even lower temperatures: applications worthy of mention include offshore engineering and large-diameter linepipes for use in arctic regions and at great underwater depths. Liquefied-gas transport vessels can be made more resistant to brittle rupture. The bending fatigue strength and service-life of valve-spring and rolling-bearing steels can be significantly increased. High-purity surfaces on piston rods and cylinders guarantee reliability in hydraulic systems, and high-purity calendering rolls permit defect-free embossing of paper surfaces. (orig.)

Growth and characterization of high-purity SiC single crystals

Science.gov (United States)

Augustine, G.; Balakrishna, V.; Brandt, C. D.

2000-04-01

High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

Confined recrystallization of high-purity aluminium during accumulative roll bonding of aluminium laminates

International Nuclear Information System (INIS)

Chekhonin, Paul; Beausir, Benoît; Scharnweber, Juliane; Oertel, Carl-Georg; Hausöl, Tina; Höppel, Heinz Werner; Brokmeier, Heinz-Günter; Skrotzki, Werner

2012-01-01

Aluminium laminates consisting of high-purity aluminium and commercially pure aluminium have been produced by accumulative roll bonding (ARB) at ambient temperature for up to 10 cycles. To study the microstructure and texture development of the high-purity aluminium layers with regard to the shrinking layer thickness during ARB, microstructure and texture investigations were carried out by electron backscatter diffraction and neutron and X-ray diffraction, respectively. While the commercially pure aluminium layers develop an ultrafine-grained microstructure, partial discontinuous recrystallization occurs in the high-purity layers. The texture of the high-purity layers mainly consists of Cube and “Tilted Cube” (tilted with respect to the transverse direction) components. The experimental results are discussed with respect to confined recrystallization in the ARB aluminium laminates.

Perspectives of data-driven LPV modeling of high-purity distillation columns

NARCIS (Netherlands)

Bachnas, A.A.; Toth, R.; Mesbah, A.; Ludlage, J.H.A.

2013-01-01

Abstract—This paper investigates data-driven, Linear- Parameter-Varying (LPV) modeling of a high-purity distillation column. Two LPV modeling approaches are studied: a local approach, corresponding to the interpolation of Linear Time- Invariant (LTI) models identified at steady-state purity levels,

Activation analysis of high purity metals and application to study on physical properties

International Nuclear Information System (INIS)

Ueda, Yoshitake; Hashimoto, Eiji; Matsushita, Rokuji.

1994-01-01

In order to determine the true characteristics of matters, the utmost reduction of impurities is indispensable. By the heightening of the purity of aluminum, that of 99.9999% purity has been obtained, but efforts have been exerted to further heighten the purity. For the purpose, it is important to know the behavior of trace impurities during refining, and the quantitative research by neutron activation analysis for various impurities has been carried out. The research on the electron condition of trace impurity atoms in refined aluminum is also important. The band refining of high purity aluminum is explained. By repeating the refining 10 times, the sample of RRR exceeding 30000 was obtained. The impurities contributing to the resistivity are Sc, Ti, V and Cr. Based on the results, the heightening of aluminum purity was attempted by devising the new procedure. As for the electric properties of solute elements in high purity metals, those of transition elements and rare earth elements in aluminum are reported. As the result of measuring the remaining resistance, the sample having the RRR exceeding 45000 after the correction for size effect was done has been obtained. At present, the efforts toward further high purity are continued. (K.I.)

Zone refining high-purity germanium

International Nuclear Information System (INIS)

Hubbard, G.S.; Haller, E.E.; Hansen, W.L.

1977-10-01

The effects of various parameters on germanium purification by zone refining have been examined. These parameters include the germanium container and container coatings, ambient gas and other operating conditions. Four methods of refining are presented which reproducibly yield 3.5 kg germanium ingots from which high purity (vertical barN/sub A/ - N/sub D/vertical bar less than or equal to2 x 10 10 cm -3 ) single crystals can be grown. A qualitative model involving binary and ternary complexes of Si, O, B, and Al is shown to account for the behavior of impurities at these low concentrations

Preserving high-purity 233U

International Nuclear Information System (INIS)

Krichinsky, Alan; Giaquinto, Joe; Canaan, Doug

2016-01-01

The MARC X Conference hosted a workshop for the scientific community to communicate needs for high-purity 233 U and its by-products in order to preserve critical items otherwise slated for downblending and disposal. Currently, only small portions of the U.S. holdings of separated 233 U are being preserved. However, many additional kilograms of 233 U (>97 % pure) still are destined to be disposed, and it is unlikely that this material will ever be replaced due to a lack of operating production capability. Summaries of information conveyed at the workshop and feedback obtained from the scientific community are presented herein. (author)

Pressure-assisted sintering of high purity barium titanate

NARCIS (Netherlands)

van den Cruijsem, S.; Varst, van der P.G.T.; With, de G.; Bortzmeyer, D.; Boussuge, M.; Chartier, Th.; Hausonne, J.M.; Mocellin, A.; Rousset, A.; Thevenot, F.

1997-01-01

The dielectric behaviour of High Purity Barium titanate (HPB) ceramics is strongly dependent on the grain size and porosity. For applications, control of grain size and porosity is required. Pressure-assisted sintering techniques at relatively low temperatures meet these requirements. In this study,

Surface passivation of high purity granular metals: zinc, cadmium, lead

Directory of Open Access Journals (Sweden)

Pirozhenko L. A.

2017-10-01

Full Text Available For the high purity metals (99.9999%, such as zinc, cadmium, and lead, which are widely used as initial components in growing semiconductor and scintillation crystals (CdTe, CdZnTe, ZnSe, (Cd, Zn, Pb WO4, (Cd, Zn, Pb MoO4 et al., it is very important to ensure reliable protection of the surface from oxidation and adsorption of impurities from the atmosphere. The specific features of surface passivation of high purity cadmium, lead and zinc are not sufficiently studied and require specific methodologies for further studies. The use of organic solutions in the schemes of chemical passivation of the investigated metals avoids hydrolysis of the obtained protective films. The use of organic solvents with pure cation and anion composition as the washing liquid prevents chemisorption of ions present in the conventionally used distilled water. This keeps the original purity of the granular metals. Novel compositions of etchants and etching scheme providing simultaneous polishing and passivation of high purity granular Zn, Cd and Pb are developed. Chemical passivation allows storing metals in the normal atmospheric conditions for more than half a year for Zn and Cd and up to 30 days for Pb without changing the state of the surface. The use of the glycerol-DMF solution in the processes for obtaining Pb granules provides self-passivation of metal surfaces and eliminates the additional chemical processing while maintaining the quality of corrosion protection.

Giant magnetocaloric effect in Gd5(Si2Ge2 alloy with low purity Gd

Directory of Open Access Journals (Sweden)

Cleber Santiago Alves

2004-12-01

Full Text Available Gd5(Ge1-xSi x, x < 4 based alloys are potential candidates for magnetic refrigeration in the range ~20 - ~290 K. However, one of the greatest obstacles for the use of that technology in large scale is the utilization of high pure Gd metal (99.99 wt. (% to produce the GdGeSi alloys, since the impurity elements decrease the intensity of the magnetocaloric effect (EMC¹. In this work, we prove that annealing of the Gd5Ge2Si2 can promote remarkable values for the EMC in comparison to those obtained for the alloy with high pure Gd. Also, the as cast alloy and the annealed alloy are not monophasic, but have at least two crystalline phases in their microstructure. Results for X-ray analysis, optical and electronic microscopy and magnetization measurements are reported.

Evaluation of purity with its uncertainty value in high purity lead stick by conventional and electro-gravimetric methods.

Science.gov (United States)

Singh, Nahar; Singh, Niranjan; Tripathy, S Swarupa; Soni, Daya; Singh, Khem; Gupta, Prabhat K

2013-06-26

A conventional gravimetry and electro-gravimetry study has been carried out for the precise and accurate purity determination of lead (Pb) in high purity lead stick and for preparation of reference standard. Reference materials are standards containing a known amount of an analyte and provide a reference value to determine unknown concentrations or to calibrate analytical instruments. A stock solution of approximate 2 kg has been prepared after dissolving approximate 2 g of Pb stick in 5% ultra pure nitric acid. From the stock solution five replicates of approximate 50 g have been taken for determination of purity by each method. The Pb has been determined as PbSO4 by conventional gravimetry, as PbO2 by electro gravimetry. The percentage purity of the metallic Pb was calculated accordingly from PbSO4 and PbO2. On the basis of experimental observations it has been concluded that by conventional gravimetry and electro-gravimetry the purity of Pb was found to be 99.98 ± 0.24 and 99.97 ± 0.27 g/100 g and on the basis of Pb purity the concentration of reference standard solutions were found to be 1000.88 ± 2.44 and 1000.81 ± 2.68 mg kg-1 respectively with 95% confidence level (k = 2). The uncertainty evaluation has also been carried out in Pb determination following EURACHEM/GUM guidelines. The final analytical results quantifying uncertainty fulfills this requirement and gives a measure of the confidence level of the concerned laboratory. Gravimetry is the most reliable technique in comparison to titremetry and instrumental method and the results of gravimetry are directly traceable to SI unit. Gravimetric analysis, if methods are followed carefully, provides for exceedingly precise analysis. In classical gravimetry the major uncertainties are due to repeatability but in electro-gravimetry several other factors also affect the final results.

Synthesis of High Purity Nonsymmetric Dialkylphosphinic Acid Extractants.

Science.gov (United States)

Wang, Junlian; Xie, Meiying; Liu, Xinyu; Xu, Shengming

2017-10-19

We present the synthesis of (2,3-dimethylbutyl)(2,4,4'-trimethylpentyl)phosphinic acid as an example to demonstrate a method for the synthesis of high purity nonsymmetric dialkylphosphinic acid extractants. Low toxic sodium hypophosphite was chosen as the phosphorus source to react with olefin A (2,3-dimethyl-1-butene) to generate a monoalkylphosphinic acid intermediate. Amantadine was adopted to remove the dialkylphosphinic acid byproduct, as only the monoalkylphosphinic acid can react with amantadine to form an amantadine∙mono-alkylphosphinic acid salt, while the dialkylphosphinic acid cannot react with amantadine due to its large steric hindrance. The purified monoalkylphosphinic acid was then reacted with olefin B (diisobutylene) to yield nonsymmetric dialkylphosphinic acid (NSDAPA). The unreacted monoalkylphosphinic acid can be easily removed by a simple base-acid post-treatment and other organic impurities can be separated out through the precipitation of the cobalt salt. The structure of the (2,3-dimethylbutyl)(2,4,4'-trimethylpentyl)phosphinic acid was confirmed by 31 P NMR, 1 H NMR, ESI-MS, and FT-IR. The purity was determined by a potentiometric titration method, and the results indicate that the purity can exceed 96%.

High purity materials as targets for radioisotope production: Needs ...

Indian Academy of Sciences (India)

Unknown

lity of high purity target materials, natural or enriched, are crucial for any successful radioisotope pro- gramme. Selection ... and blockages detection in buried pipelines are rendered ..... from reputed international suppliers with analysis report.

High purity radioactive beams at the bevalac

International Nuclear Information System (INIS)

Alonso, J.R.; Chatterjee, A.; Tobias, C.A.

1979-03-01

Peripheral nuclear fragmentation reactions of primary Bevalac heavy ion beams are used to produce secondary beams of radioactive nuclei. The large cross section and small deflection of the projectile fragments lead to high production and delivery efficiency for these beams. Dispersive beam transport allows good separation and purification of the desired secondary beams. 11 C and 19 Ne beams of high purity and good intensity (almost 0.2% of the primary beam current) are presently being used for biomedical experiments

Physics and a plan for a 45 GeV facility that extends the high-intensity capability in nuclear and particle physics

International Nuclear Information System (INIS)

1986-05-01

A proposed program of physics research to be carried out at a 45 GeV high-intensity proton accelerator is discussed. In addition to a general discussion of the potentially most productive research directions, specific experiments in strong and flavor physics are presented. The proposed strong interaction physics deals with investigation of nonperturbative QCD through the study of exotic hadrons and measurement of nuclear medium effects on flavor-specific quark momentum distribution. The major part of the proposed program in flavor interaction physics probes possible physics beyond the minimal standard model. A design using two synchrotrons produces a 45 GeV proton beam by increasing the energy of the present LAMPF 800 MeV beam. A booster operating at 60 Hz accelerates 144 μA from 800 MeV to 6 GeV while the main ring operating at 3.33 Hz accelerates 32 μA from 6 GeV to 45 GeV. The 112 μA at 6 GeV which is not further accelerated is used to create intense beams of neutrinos and pulsed muons. The 32 μA of 45 GeV beam is slow extracted into an existing experimental area in which a large number of high-intensity, high-purity kaon and other secondary beams will be produced. A proposed layout of the experimental areas along with the characteristics of the secondary beams is also presented. The report concludes with a cost estimate to construct such a facility at Los Alamos

Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0 νββ decay searches of 76Ge

Science.gov (United States)

Bhike, Megha; Fallin, B.; Krishichayan; Tornow, W.

2015-02-01

The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ∼ 86%76Ge and ∼ 14%74Ge used in the 0 νββ searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the 3H (p , n)3He, 2H (d , n)3He and 3H (d , n)4He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution γ-ray spectroscopy was used to determine the γ-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the 74Ge (n , γ)75Ge reaction, the present data are about a factor of two larger than predicted. It was found that the 74Ge (n , γ)75Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the 76Ge (n , γ)77Ge yield due to the larger cross section of the former reaction.

A High-Purity Alumina for Use in Studies of Shock Loaded Samples

Science.gov (United States)

Lacina, David; Neel, Christopher

2017-06-01

We report the results of plate impact experiments on a potential new ``standard'' material, Coorstek Plasmapure-UC (99.9% purity) polycrystalline alumina, for use in non-conduction, impact environment, shock loading studies. This work was motivated by a desire to find a 99.9% purity alumina to replace the now unavailable Coors Vistal (99.9%) alumina, as it was hoped the Hugoniot elastic limit (HEL) of the new standard would match the 9-11 GPa value of Vistal. Shock response data, including the HEL, Hugoniot particle velocities, Hugoniot shock velocities, stress vs volume, and release wave speeds, was obtained up to 14 GPa. This data will be compared with Hugoniot curve data for other high purity alumina to contrast differences in the shock response, and is intended to be useful in impedance matching calculations. We will show that the HEL of Plasmapure-UC alumina is 5.5 GPa and speculate on causes for this lower than expected value. We will also explore why the elastic-plastic response for Plasmapure-UC alumina differs from what has been observed from other high purity alumina. The final result of this work is to recommend a well-characterized, lower purity alumina (Coorstek AD-995) as a potential new ``standard'' material.

Tests of ball bearing used in high-temperature and high-purity water

International Nuclear Information System (INIS)

Leng Chengmu; Hao Shouxin.

1987-01-01

According to the particular conditions and the operation environments in high-temperature and high-purity water, the test content and the measurement instrumentation for the ball bearing were defined. Through various tests, operational performances of the bearing have preliminarily been understood. It provided some useful information for the engineering application of the bearing

Radiochemical purity of Mo and Tc solution obtained after irradiation and dissolution of Mo-100-enriched and ultra-high-purity natural Mo disks

Energy Technology Data Exchange (ETDEWEB)

Tkac, Peter [Argonne National Lab. (ANL), Argonne, IL (United States); Gromov, Roman [Argonne National Lab. (ANL), Argonne, IL (United States); Chemerisov, Sergey D. [Argonne National Lab. (ANL), Argonne, IL (United States); Rotsch, David A. [Argonne National Lab. (ANL), Argonne, IL (United States); Vandegrift, George F. [Argonne National Lab. (ANL), Argonne, IL (United States)

2016-09-01

Four irradiations of ultra-high-purity natural Mo targets and one irradiation using 97.4% Mo-100-enriched material were performed. The purpose of these irradiations was to determine whether the presence of Sn stabilizer in the H₂O₂ used for the dissolution of sintered Mo disks can affect the radiochemical purity of the final K₂MoO₄ in 5M KOH solution. Results from radiochemical purity tests performed using thin-layer paper chromatography show that even 2– 3× excess of Sn-stabilized H₂O₂ typically used for dissolution of sintered Mo disks did not affect the radiochemical purity of the final product.

Fused salt processing of impure plutonium dioxide to high-purity plutonium metal

International Nuclear Information System (INIS)

Mullins, L.J.; Christensen, D.C.; Babcock, B.R.

1982-01-01

A process for converting impure plutonium dioxide (approx. 96% pure) to high-purity plutonium metal (>99.9%) was developed. The process consists of reducing the oxide to an impure plutonium metal intermediate with calcium metal in molten calcium chloride. The impure intermediate metal is cast into an anode and electrorefined to produce high-purity plutonium metal. The oxide reduction step is being done now on a 0.6-kg scale with the resulting yield being >99.5%. The electrorefining is being done on a 4.0-kg scale with the resulting yield being 80 to 85%. The purity of the product, which averages 99.98%, is essentially insensitive to the purity of the feed metal. The yield, however, is directly dependent on the chemical composition of the feed. To date, approximately 250 kg of impure oxide has been converted to pure metal by this processing sequence. The availability of impure plutonium dioxide, together with the need for pure plutonium metal, makes this sequence a valuable plutonium processing tool

Analysis technique of impurity in high purity deuterium by cryogenic gas-chromatography

International Nuclear Information System (INIS)

Zhou Junbo; Gao Liping

2007-01-01

A veracious and applicable quantitative analysis method of O 2 , N 2 and H 2 , HD in high purity deuterium by the chromatogram columniation filled with 5A molecular sieve and alumina was researched and constituted at natural temperature and 77 K, respectively. Minimum detecting limit of the present method is (150-200) x 10 -6 for H 2 and HD, and it can meet the need of quantitative analysis of the impurity during high purity deuterium preparation. (authors)

Preparation of high-purity Pr(3+) doped Ge–Ga–Sb–Se glasses with intensive middle infrared luminescence

Energy Technology Data Exchange (ETDEWEB)

Karaksina, E.V.; Shiryaev, V.S., E-mail: shiryaev@ihps.nnov.ru; Kotereva, T.V.; Churbanov, M.F.

2016-02-15

Glass materials with high emission characteristics and low content of limiting impurities are required for creation of devices for middle infrared (mid-IR) fiber optics. The paper presents the results of preparation of high-purity Pr{sup 3+}-doped Ga{sub x}Ge{sub y}Sb{sub z}Se{sub 1−(x+y+z)} (x=3÷4, y=20÷26, z=5÷11) glasses. The multi-stage technique for synthesis of these glasses is developed. It is based on chemical distillation purification of glass components and the transport reaction for purification of gallium. Transmitting, as well as thermal and luminescent properties of glasses are investigated. The content of limiting impurities of oxygen, carbon and hydrogen in the glass samples was ≤0.2 ppm wt. The 1300–3000 ppm wt Pr{sup 3+}-doped Ga–Ge–Sb–Se bulk glasses exhibit an intensive photoluminescence in the spectral range of 3.5–5.5 μm.

Hydrogen concentration and distribution in high-purity germanium crystals

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.; Luke, P.N.

1981-10-01

High-purity germanium crystals used for making nuclear radiation detectors are usually grown in a hydrogen ambient from a melt contained in a high-purity silica crucible. The benefits and problems encountered in using a hydrogen ambient are reviewed. A hydrogen concentration of about 2 x 10 15 cm -3 has been determined by growing crystals in hydrogen spiked with tritium and counting the tritium β-decays in detectors made from these crystals. Annealing studies show that the hydrogen is strongly bound, either to defects or as H 2 with a dissociation energy > 3 eV. This is lowered to 1.8 eV when copper is present. Etching defects in dislocation-free crystals grown in hydrogen have been found by etch stripping to have a density of about 1 x 10 7 cm -3 and are estimated to contain 10 8 H atoms each

Muon channeling in Ge: Evidence for pionium formation

International Nuclear Information System (INIS)

Flik, G.; Bradbury, J.N.; Cooke, D.W.; Heffner, R.H.; Leon, M.; Paciotti, M.A.; Schillaci, M.E.; Maier, K.; Rempp, H.; Boekema, C.; Reidy, J.J.; Daniel, H.

1986-01-01

In a recent experiment observing muon channeling from the decay of positive pions implanted in high-purity Ge single crystals, the pion decay site is found to be sensitive to the concentration of excess charge carriers produced by photon absorption. Distinctly different channeling profiles are observed in Ge at 100 K for illuminated samples (high carrier concentration) as compared to unilluminated samples (low carrier concentration). From these data we conclude that different electronic states of the pion in a semiconductor host lattice must account for the observed changes in the pion location. Furthermore we suggest that the pion exists in the solid both as the bare entity π + and as pionium (π + e - ), i.e., a hydrogen-like atom with a mesonic nucleus. (orig.)

Some aspects of ICP-AES analysis of high purity rare earths

International Nuclear Information System (INIS)

Murty, P.S.; Biswas, S.S.

1991-01-01

Inductively coupled plasma atomic emission spectrometry (ICP-AES) is a technique capable of giving high sensitivity in trace elemental analysis. While the technique possesses high sensitivity, it lacks high selectivity. Selectivity is important where substances emitting complex spectra are to be analysed for trace elements. Rare earths emit highly complex spectra in a plasma source and the determination of adjacent rare earths in a high purity rare earth matrix, with high sensitivity, is not possible due to the inadequate selectivity of ICP-AES. One approach that has yielded reasonably good spectral selectivity in the high purity rare earth analysis by ICP-AES is by employing a combination of wavelength modulation techniques and high resolution echelle grating. However, it was found that by using a high resolution monochromator senstitivities either comparable to or better than those reported by the wavelength modulation technique could be obtained. (author). 2 refs., 2 figs., 2 tabs

Isolation of high purity americium metal via distillation

Science.gov (United States)

Squires, Leah N.; King, James A.; Fielding, Randall S.; Lessing, Paul

2018-03-01

Pure americium metal is a crucial component for the fabrication of transmutation fuels. Unfortunately, americium in pure metal form is not available; however, a number of mixed metals and mixed oxides that include americium are available. In this manuscript a method is described to obtain high purity americium metal from a mixture of americium and neptunium metals with lead impurity via distillation.

Ion-exchange preparation of high-purity vanadium acid from industrial liquors

International Nuclear Information System (INIS)

Sajdakhmedov, U.A.; Arslanov, Sh.S.; Vulikh, A.I.

1994-01-01

The results of investigations on production of special-purity vanadium acid and vanadium oxide directly from process solutions (technical grade liquors) using ionites are presented. Potentiality of thorough purification of vanadium(5) oxide, when producing vanadium acid on the KU-2 cationite with subsequent purification on anionite, is shown. On the basis of the results obtained a principle flowsheet of ion-exchange production of high-purity vanadium(5) oxide from industrial liquors has been developed. 2 refs.; 1 fig.; 4 tabs

Corrosion of high purity Fe-Cr-Ni alloys in 13 N boiling nitric acid

International Nuclear Information System (INIS)

Ohta, Joji; Mayuzumi, Masami; Kusanagi, Hideo; Takaku, Hiroshi

1998-01-01

Corrosion in boiling nitric acid was investigated for high purity Fe-18%Cr-12%Ni alloys and type 304L stainless steels (SS). Owing to very low impurity concentration, the solution treated high purity alloys show almost no intergranular corrosion while the type 304L SS show severe intergranular corrosion. Both in the high purity alloys and type 304L SS, aging treatments ranging from 873 K to 1073 K for 1 h enhance intergranular corrosion. During the aging treatments, impurities should be segregated to the grain boundaries. The corrosion behaviors were discussed from a standpoint of impurity segregation to grain boundaries. This study is of importance for purex reprocessing of spent fuels

TIGRESS highly-segmented high-purity germanium clover detector

Science.gov (United States)

Scraggs, H. C.; Pearson, C. J.; Hackman, G.; Smith, M. B.; Austin, R. A. E.; Ball, G. C.; Boston, A. J.; Bricault, P.; Chakrawarthy, R. S.; Churchman, R.; Cowan, N.; Cronkhite, G.; Cunningham, E. S.; Drake, T. E.; Finlay, P.; Garrett, P. E.; Grinyer, G. F.; Hyland, B.; Jones, B.; Leslie, J. R.; Martin, J.-P.; Morris, D.; Morton, A. C.; Phillips, A. A.; Sarazin, F.; Schumaker, M. A.; Svensson, C. E.; Valiente-Dobón, J. J.; Waddington, J. C.; Watters, L. M.; Zimmerman, L.

2005-05-01

The TRIUMF-ISAC Gamma-Ray Escape-Suppressed Spectrometer (TIGRESS) will consist of twelve units of four high-purity germanium (HPGe) crystals in a common cryostat. The outer contacts of each crystal will be divided into four quadrants and two lateral segments for a total of eight outer contacts. The performance of a prototype HPGe four-crystal unit has been investigated. Integrated noise spectra for all contacts were measured. Energy resolutions, relative efficiencies for both individual crystals and for the entire unit, and peak-to-total ratios were measured with point-like sources. Position-dependent performance was measured by moving a collimated source across the face of the detector.

High purity neodymium acetate from mixed rare earth carbonates

International Nuclear Information System (INIS)

Queiroz, Carlos A. da Silva; Rocha, Soraya M. Rizzo da; Vasconcellos, Mari E. de; Lobo, Raquel M.; Seneda, Jose A.; Pedreira, Walter dos R.

2011-01-01

A simple and economical chemical process for obtaining high purity neodymium acetate is discussed. The raw material in the form rare earth carbonate is produced industrially from the chemical treatment of Brazilian monazite. Ion exchange chromatography technique with a strong cationic resin, proper to water treatment, and without the use of retention ions was used for the fractionating of the rare earth elements (REE). In this way, it was possible to obtain 99.9% pure Nd 2 O 3 in yields greater than or equal 80%, with the elution of the REE using ammonium salt of ethylenediaminetetraacetic acid (EDTA) solution in pH controlled. The complex of EDTA-neodymium was transformed into neodymium oxide, which was subsequently dissolved in acetic acid to obtain the neodymium acetates. Molecular absorption spectrophotometry was used to monitor the neodymium content during the process and sector field inductively coupled plasma mass spectrometry was used to certify the purity of the neodymium acetates. The typical neodymium acetates obtained contain the followings contaminants in μg g -1 : Sc(5.1); Y (0.9); La (1.0); Ce (6.1); Pr (34,4); Sm (12.8); Eu (1.1); Gd (15.4); Tb (29.3); Dy (5.2), Ho(7.4); Er (14.6); Tm (0.3); Yb (2.5); Lu (1.0). The high purity neodymium acetates obtained from this procedure have been applied, replacing the imported product, in research and development area on rare earth catalysts. (author)

Scalable preparation of high purity rutin fatty acid esters following enzymatic synthesis

DEFF Research Database (Denmark)

Lue, Bena-Marie; Guo, Zheng; Xu, Xuebing

2010-01-01

Investigations into expanded uses of modified flavonoids are often limited by the availability of these high purity compounds. As such, a simple, effective and relatively fast method for isolation of gram quantities of both long and medium chain fatty acid esters of rutin following scaled......-up biosynthesis reactions was established. Acylation reactions of rutin and palmitic or lauric acids were efficient in systems containing dried acetone and molecular sieves, yielding from 70–77% bioconversion after 96 h. Thereafter, high purity isolates (>97%) were easily obtained in significant quantities...

Demands made on high-purity copper for special purposes

International Nuclear Information System (INIS)

Roettges, D.

1977-01-01

The properties (electrical resistivity, residual impurities) of high-purity copper produced on a technical scale are reported as well as its practical applications. The paper discusses a high-oxygen copper (SV) with low residual resistivity at low temperatures and an oxygen-free (hydrogen-stable) copper (BE electronic) with low gas content. The SV quality has been specially developed for use as stabilizer in superconductors while the BE quality is used in high and ultrahigh vacuum. (GSC) [de

Neutron activation analysis of high purity substances

International Nuclear Information System (INIS)

Gil'bert, Eh.N.

1987-01-01

Peculiarities of neutron-activation analysis (NAA) of high purity substances are considered. Simultaneous determination of a wide series of elements, high sensitivity (the lower bound of determined contents 10 -9 -10 -10 %), high selectivity and accuracy (Sr=0.10-0.15, and may be decreased up to 0.001), possibility of analysis of the samples from several micrograms to hundreds of grams, simplicity of calibration may be thought NAA advantages. Questions of accounting of NAA systematic errors associated with the neutron flux screening by the analysed matrix and with production of radionuclides of determined elements from accompanying elements according to concurrent nuclear reactions, as well as accounting of errors due to self-absorption of recorded radiation by compact samples, are considered

High-power laser diodes with high polarization purity

Science.gov (United States)

Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

2017-02-01

Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

Multiwire proportional chambers in the triggering system of the streamer chamber for high-Pt charged particle production detection in 40 GeV/c hadron-nucleus interactions

International Nuclear Information System (INIS)

Czyrkowski, H.; Dabrowski, R.; Derlicki, A.

1985-01-01

We describe a triggering system based on the multiwire proportional chambers (MWPCs) for the high-P t charged particles selection in Π - A interactions at 40 GeV/c (RISC experiment). The coincidence matrices processing only combinations of hits in MWPCs allow one to reach sufficient purity of experimental material. The large area MWPCs work close to the streamer chamber high voltage electrode without any problems. Details of the fabrication procedure and peformances are also given. 12 refs. (author)

Automated synthesis of ["1"8F](2S,4R)-4-fluoroglutamine on a GE TRACERlab™ FX-N Pro module

International Nuclear Information System (INIS)

Zhang, Xiang; Basuli, Falguni; Shi, Zhen-Dan; Xu, Biying; Blackman, Burchelle; Choyke, Peter L.; Swenson, Rolf E.

2016-01-01

Glutamine (Gln) and its analogues may serve as imaging agents for tumor diagnosis using positron emission tomography (PET), especially for tumors with negative ["1"8F]FDG scan. We report the first automated synthesis of ["1"8F](2S,4R)-4-fluoroglutamine (["1"8F]FGln) on a GE TRACERlab™ FX-N Pro module. ["1"8F]FGln was obtained in 80±3 min with a radiochemical yield of 21±3% (n=5, uncorrected). The radiochemical purity was >98%, and optical purity 90±5%. The synthesis is highly reproducible with good chemical purity, radiochemical yield, and is suitable for translation to cGMP production. - Highlights: • The radiosynthesis of ["1"8F]fluoroglutamine was optimized with improved yield and purity. • Fully automated synthesis was established on a GE TRACERlab™ FX-N Pro module. • Radiochemical yield of 21±3% (uncorrected, n=5) was obtained with good reproducibility. • The automation could be easily adapted to cGMP production for routine clinical use.

Preparation of high-purity zirconium dioxide from baddeleyite

International Nuclear Information System (INIS)

Voskobojnikov, N.B.; Skiba, G.S.

1996-01-01

Interaction of baddeleyite concentrate with calcium oxide and calcium chloride in the process of caking is studied. The influence of grain size on calcium zirconate formation is tested. Conditions for cake leaching by hydrochloric acid and zirconium(4) oxychloride purification from calcium and silicon compounds by recrystallization are reported. Zirconium dioxide corresponding to specifications (6-2 special purity) is obtained with a high (more than 90%) chemical yield. 9 refs., 1 tab

Spectroscopic Determination of Trace Contaminants in High Purity Oxygen

Science.gov (United States)

Hornung, Steven D.

2011-01-01

Oxygen used for extravehicular activities (EVA) must be free of contaminants because a difference in a few tenths of a percent of argon or nitrogen content can mean significant reduction in available EVA time. These inert gases build up in the extravehicular mobility unit because they are not metabolized or scrubbed from the atmosphere. Measurement of oxygen purity above 99.5% is problematic, and currently only complex instruments such as gas chromatographs or mass spectrometers are used for these determinations. Because liquid oxygen boil-off from the space shuttle will no longer be available to supply oxygen for EVA use, other concepts are being developed to produce and validate high purity oxygen from cabin air aboard the International Space Station. A prototype optical emission technique capable of detecting argon and nitrogen below 0.1% in oxygen was developed at White Sands Test Facility. This instrument uses a glow discharge in reduced pressure gas to produce atomic emission from the species present. Because the atomic emission lines from oxygen, nitrogen, and argon are discrete and in many cases well-separated, trace amounts of argon and nitrogen can be detected in the ultraviolet and visible spectrum. This is a straightforward, direct measurement of the target contaminants and may lend itself to a device capable of on-orbit verification of oxygen purity. System design and optimized measurement parameters are presented.

Fast-neutron-induced potential background near the Q value of neutrinoless double-β decay of 76Ge

Science.gov (United States)

Tornow, W.; Bhike, Megha; Fallin, B.; Krishichayan

2016-01-01

The 76Ge (n,p)76Ga reaction and the subsequent β decay of 76Ga to 76Ge has been used to excite the 3951.89-keV state of 76Ge , which decays by the emission of a 2040.70-keV γ ray. Using high-purity germanium detectors, the associated pulse-height signal may be undistinguishable from the potential signal produced in neutrinoless double-β decay of 76Ge with its Q value of 2039.0 keV. At 20-MeV neutron energy the production cross section of the 2040.70-keV γ ray is approximately 0.1 mb.

High-purity Cu nanocrystal synthesis by a dynamic decomposition method

Science.gov (United States)

Jian, Xian; Cao, Yu; Chen, Guozhang; Wang, Chao; Tang, Hui; Yin, Liangjun; Luan, Chunhong; Liang, Yinglin; Jiang, Jing; Wu, Sixin; Zeng, Qing; Wang, Fei; Zhang, Chengui

2014-12-01

Cu nanocrystals are applied extensively in several fields, particularly in the microelectron, sensor, and catalysis. The catalytic behavior of Cu nanocrystals depends mainly on the structure and particle size. In this work, formation of high-purity Cu nanocrystals is studied using a common chemical vapor deposition precursor of cupric tartrate. This process is investigated through a combined experimental and computational approach. The decomposition kinetics is researched via differential scanning calorimetry and thermogravimetric analysis using Flynn-Wall-Ozawa, Kissinger, and Starink methods. The growth was found to be influenced by the factors of reaction temperature, protective gas, and time. And microstructural and thermal characterizations were performed by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and differential scanning calorimetry. Decomposition of cupric tartrate at different temperatures was simulated by density functional theory calculations under the generalized gradient approximation. High crystalline Cu nanocrystals without floccules were obtained from thermal decomposition of cupric tartrate at 271°C for 8 h under Ar. This general approach paves a way to controllable synthesis of Cu nanocrystals with high purity.

Characterization of a high-purity germanium detector for small-animal SPECT.

Science.gov (United States)

Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

2011-09-21

We present an initial evaluation of a mechanically cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axes. Finally, a flood-corrected flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT.

Wet routes of high purity BaTiO3 nanopowders

International Nuclear Information System (INIS)

Wang Liqiu; Liu Liang; Xue Dongfeng; Kang Hongmin; Liu Changhou

2007-01-01

High purity BaTiO 3 nanopowders were prepared in wet routes through stearic acid gel (SAG) and acetic acid gel (AAG) techniques, respectively. BaTiO 3 samples were characterized by X-ray diffraction, transmission electron microscope, Fourier transform infrared spectrometry, X-ray fluorescence spectrometry, and thermal gravimetric analysis. The present results indicate that both methods have a similar reaction process during calcination, while BaTiO 3 crystallites were initially formed at 550 deg. C by SAG and 800 deg. C by AAG. Both methods could produce BaTiO 3 powders with a cubic perovskite structure, while they had different grain size distributions within 25-50 nm for SAG and 50-80 nm for AAG. BaTiO 3 samples prepared by SAG had a lower agglomeration than those by AAG. SAG has shown many distinctive advantages in the preparation of high purity BaTiO 3 nanopowders, without Ba and Ti losses and hazardous wastes

Development of high purity large forgings for nuclear power plants

International Nuclear Information System (INIS)

Tanaka, Yasuhiko; Sato, Ikuo

2011-01-01

The recent increase in the size of energy plants has been supported by the development of manufacturing technology for high purity large forgings for the key components of the plant. To assure the reliability and performance of the large forgings, refining technology to make high purity steels, casting technology for gigantic ingots, forging technology to homogenize the material and consolidate porosity are essential, together with the required heat treatment and machining technologies. To meet these needs, the double degassing method to reduce impurities, multi-pouring methods to cast the gigantic ingots, vacuum carbon deoxidization, the warm forging process and related technologies have been developed and further improved. Furthermore, melting facilities including vacuum induction melting and electro slag re-melting furnaces have been installed. By using these technologies and equipment, large forgings have been manufactured and shipped to customers. These technologies have also been applied to the manufacture of austenitic steel vessel components of the fast breeder reactors and components for fusion experiments.

Development of high purity large forgings for nuclear power plants

Science.gov (United States)

Tanaka, Yasuhiko; Sato, Ikuo

2011-10-01

The recent increase in the size of energy plants has been supported by the development of manufacturing technology for high purity large forgings for the key components of the plant. To assure the reliability and performance of the large forgings, refining technology to make high purity steels, casting technology for gigantic ingots, forging technology to homogenize the material and consolidate porosity are essential, together with the required heat treatment and machining technologies. To meet these needs, the double degassing method to reduce impurities, multi-pouring methods to cast the gigantic ingots, vacuum carbon deoxidization, the warm forging process and related technologies have been developed and further improved. Furthermore, melting facilities including vacuum induction melting and electro slag re-melting furnaces have been installed. By using these technologies and equipment, large forgings have been manufactured and shipped to customers. These technologies have also been applied to the manufacture of austenitic steel vessel components of the fast breeder reactors and components for fusion experiments.

Process for the production of high purity deuterium

International Nuclear Information System (INIS)

Arrathoon, R.

1977-01-01

A process for the electrolysis of heavy water which results in the production of high purity deuterium without periodic replenishment of the electrolyte with additional deuterated compounds is defined. Electrolysis is effected through the use of an inexpensive cation-action permselective membrane which is essentially a solid polymer electrolyte and which is capable of automatically separating the evolved deuterium and oxygen gas. This cation-active permselective membrane does not introduce any intrinsic impurities or tritium contamination in the generated deuterium gas, does not require periodic revitalization with deuterated compounds or other chemical compounds, and is characterized by an unusually high electrical efficiency

Corrosion behavior of high purity Fe-Cr-Ni alloys in trans-passive condition

International Nuclear Information System (INIS)

Mayuzumi, Masami; Ohta, Jyoji; Kako, Kenji

1998-01-01

The corrosion behavior of high-purity (99.99%) Fe-Cr-Ni alloys was investigated in 13 N nitric acid with/without Ce 4+ ions to clarify the effect of impurities on the trans-passive corrosion of stainless steel. The following results were obtained. (1) Almost no intergranular corrosion was observed in the high-purity alloys, although the corrosion rate of the matrix region was nearly the same as that of a commercial stainless steel with the same Cr and Ni content. (2) Due to the improved intergranular corrosion resistance, the effect of the purification became significant in the corrosion condition with the grain-separation being predominant. (3) The high-purity alloys showed higher susceptivility to intergranular corrosion with aging treatment between 873 K and 1073 K. Although the sulfuric acid/copper sulfate test suggested the formation of Cr-depleted zones, a grain boundary micro-analysis using a FETEM with an EDX did not reveal any change in Cr content or impurity segregain along the grain boundaries. The mechanism of corrosion enhancement resulting from the aging treatment remains nuclear. (author)

Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

DEFF Research Database (Denmark)

Lu, Weifang; Li, Cheng; Lin, Guangyang

2015-01-01

Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

High spin states in 66,68Ge

International Nuclear Information System (INIS)

Hermkens, U.; Becker, F.; Eberth, J.; Freund, S.; Mylaeus, T.; Skoda, S.; Teichert, W.; Werth, A. v.d.

1992-01-01

High spin states of 66,68 Ge have been investigated at the FN Tandem accelerator of the University of Koeln via the reactions 40 Ca( 32 S,α2p,4p) 66,68 Ge at a beam energy of 100 MeV and 58 Ni( 16 O,α2p) 68 Ge at 65 MeV. The OSIRIS spectrometer with 12 escape suppressed Ge detectors was used to measure γγ coincidences and γ-ray angular distributions. In 66 Ge ( 68 Ge) 33 (22) new levels were found and 63 (62) new γ-transitions were placed in the level scheme. Both nuclei show a rather complicated but similar excitation pattern, ruled by the interplay of quasiparticle and collective degrees of freedom. The results are compared to the recently published EXVAM calculations for 68 Ge. (orig.)

The European Expression Of Interest For High Purity U-233 Materials

Energy Technology Data Exchange (ETDEWEB)

Giaquinto, Joseph M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Younkin, James R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-04-01

The purpose of this letter report is to document the response for an Expression of Interest (EOI) sent to the European Safeguards and research and development (R&D) scientific communities for the distribution of small amounts of high purity ²³³U materials for use in safeguards, nonproliferation, and basic R&D in the nuclear disciplines. The intent for the EOI was to gauge the level of international interest for these materials from government and research institutions with programmatic missions in the nuclear security or nuclear R&D arena. The information contained herein is intended to provide information to assist key decision makers in DOE as to the ultimate disposition path for the high purity materials currently being recovered at Oak Ridge National Laboratory (ORNL) and only those items for which there is no United States (U.S.) sponsor identified.

Preparation of uranium-plutonium mixed nitride pellets with high purity

International Nuclear Information System (INIS)

Arai, Yasuo; Shiozawa, Ken-ichi; Ohmichi, Toshihiko

1992-01-01

Uranium-plutonium mixed nitride pellets have been prepared in the gloveboxes with high purity Ar gas atmosphere. Carbothermic reduction of the oxides in N 2 -H 2 mixed gas stream was adopted for synthesizing mixed nitride. Sintering was carried out in various conditions and the effect on the pellet characteristics was investigated. (author)

Neutron activation analysis of high purity tellurium

International Nuclear Information System (INIS)

Gil'bert, Eh.N.; Verevkin, G.V.; Obrazovskij, E.G.; Shatskaya, S.S.

1980-01-01

A scheme of neutron activation analysis of high purity tellurium is developed. Weighed amount of Te (0.5 g) is irradiated for 20-40 hr in the flux of 2x10 13 neutron/(cm 2 xs). After decomposition of the sample impurities of gold and palladium are determined by the extraction with organic sulphides. Tellurium separation from the remaining impurities is carried out by the extraction with monothiobenzoic acid from weakly acidic HCl solutions in the presence of iodide-ions, suppressing silver extraction. Remaining impurity elements in the refined product are determined γ-spectrometrically. The method allows to determine 34 impurities with determination limits 10 -6 -10 -11 g

Neutron activation analysis of high-purity zinc

International Nuclear Information System (INIS)

Khodzhamberdyeva, A.A.; Usmanova, M.M.; Gil'bert, Eh.N.; Ivanov, I.M.; Yankovskaya, T.A.; Kholyavko, E.P.

1987-01-01

The methods of neutron activation analysis of high-purity zinc with preliminary separation of the zinc base using extraction by trialkylbenzylammonium rhodanide in carbon tetrachloride from 0.5-2.0 M nitric acid solutions is developed. Only rhenium is quantitatively extracted together with zinc. Gold, iridium and molybdenum are extracted to 50-60%, and selenium - to 20%. The Na, K, La, Cr, Sc, Co, Cs, Rb, Fe, Zr, Sn, Te, As, Cd, Hf, W, Sb, Sm impurities remain in the aqueous phase. The methods permits to determine the impurities above with detection limits from 1x10 -6 to 4x10 -11 g

Creating high-purity angular-momentum-state Rydberg atoms by a pair of unipolar laser pulses

Science.gov (United States)

Xin, PeiPei; Cheng, Hong; Zhang, ShanShan; Wang, HanMu; Xu, ZiShan; Liu, HongPing

2018-04-01

We propose a method of producing high-purity angular-momentum-state Rydberg atoms by a pair of unipolar laser pulses. The first positive-polarity optical half-cycle pulse is used to prepare an excited-state wave packet while the second one is less intense, but with opposite polarity and time delayed, and is employed to drag back the escaping free electron and clip the shape of the bound Rydberg wave packet, selectively increasing or decreasing a fraction of the angular-momentum components. An intelligent choice of laser parameters such as phase and amplitude helps us to control the orbital-angular-momentum composition of an electron wave packet with more facility; thus, a specified angular-momentum state with high purity can be achieved. This scheme of producing high-purity angular-momentum-state Rydberg atoms has significant application in quantum-information processing.

Melting point of high-purity germanium stable isotopes

Science.gov (United States)

Gavva, V. A.; Bulanov, A. D.; Kut'in, A. M.; Plekhovich, A. D.; Churbanov, M. F.

2018-05-01

The melting point (Tm) of germanium stable isotopes 72Ge, 73Ge, 74Ge, 76Ge was determined by differential scanning calorimetry. With the increase in atomic mass of isotope the decrease in Tm is observed. The decrease was equal to 0.15 °C per the unit of atomic mass which qualitatively agrees with the value calculated by Lindemann formula accounting for the effect of "isotopic compression" of elementary cell.

Effect of the microstructure on electrical properties of high-purity germanium

Science.gov (United States)

Podkopaev, O. I.; Shimanskii, A. F.; Molotkovskaya, N. O.; Kulakovskaya, T. V.

2013-05-01

The interrelation between the electrical properties and the microstructure of high-purity germanium crystals has been revealed. The electrical conductivity of polycrystalline samples increases and the life-time of nonequilibrium charge carriers in them decreases with a decrease in the crystallite sizes.

High-precision efficiency calibration of a high-purity co-axial germanium detector

Energy Technology Data Exchange (ETDEWEB)

Blank, B., E-mail: blank@cenbg.in2p3.fr [Centre d' Etudes Nucléaires de Bordeaux Gradignan, UMR 5797, CNRS/IN2P3, Université de Bordeaux, Chemin du Solarium, BP 120, 33175 Gradignan Cedex (France); Souin, J.; Ascher, P.; Audirac, L.; Canchel, G.; Gerbaux, M.; Grévy, S.; Giovinazzo, J.; Guérin, H.; Nieto, T. Kurtukian; Matea, I. [Centre d' Etudes Nucléaires de Bordeaux Gradignan, UMR 5797, CNRS/IN2P3, Université de Bordeaux, Chemin du Solarium, BP 120, 33175 Gradignan Cedex (France); Bouzomita, H.; Delahaye, P.; Grinyer, G.F.; Thomas, J.C. [Grand Accélérateur National d' Ions Lourds, CEA/DSM, CNRS/IN2P3, Bvd Henri Becquerel, BP 55027, F-14076 CAEN Cedex 5 (France)

2015-03-11

A high-purity co-axial germanium detector has been calibrated in efficiency to a precision of about 0.15% over a wide energy range. High-precision scans of the detector crystal and γ-ray source measurements have been compared to Monte-Carlo simulations to adjust the dimensions of a detector model. For this purpose, standard calibration sources and short-lived online sources have been used. The resulting efficiency calibration reaches the precision needed e.g. for branching ratio measurements of super-allowed β decays for tests of the weak-interaction standard model.

High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.

1991-11-01

Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

Search for Neutrinoless Double-β Decay in Ge 76 with the Majorana Demonstrator

Science.gov (United States)

Aalseth, C. E.; Abgrall, N.; Aguayo, E.; Alvis, S. I.; Amman, M.; Arnquist, I. J.; Avignone, F. T.; Back, H. O.; Barabash, A. S.; Barbeau, P. S.; Barton, C. J.; Barton, P. J.; Bertrand, F. E.; Bode, T.; Bos, B.; Boswell, M.; Bradley, A. W.; Brodzinski, R. L.; Brudanin, V.; Busch, M.; Buuck, M.; Caldwell, A. S.; Caldwell, T. S.; Chan, Y.-D.; Christofferson, C. D.; Chu, P.-H.; Collar, J. I.; Combs, D. C.; Cooper, R. J.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Dunmore, J. A.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Fast, J. E.; Finnerty, P.; Fraenkle, F. M.; Fu, Z.; Fujikawa, B. K.; Fuller, E.; Galindo-Uribarri, A.; Gehman, V. M.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Hallin, A. L.; Haufe, C. R.; Hehn, L.; Henning, R.; Hoppe, E. W.; Hossbach, T. W.; Howe, M. A.; Jasinski, B. R.; Johnson, R. A.; Keeter, K. J.; Kephart, J. D.; Kidd, M. F.; Knecht, A.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Lesko, K. T.; Leviner, L. E.; Loach, J. C.; Lopez, A. M.; Luke, P. N.; MacMullin, J.; MacMullin, S.; Marino, M. G.; Martin, R. D.; Massarczyk, R.; McDonald, A. B.; Mei, D.-M.; Meijer, S. J.; Merriman, J. H.; Mertens, S.; Miley, H. S.; Miller, M. L.; Myslik, J.; Orrell, J. L.; O'Shaughnessy, C.; Othman, G.; Overman, N. R.; Perumpilly, G.; Pettus, W.; Phillips, D. G.; Poon, A. W. P.; Pushkin, K.; Radford, D. C.; Rager, J.; Reeves, J. H.; Reine, A. L.; Rielage, K.; Robertson, R. G. H.; Ronquest, M. C.; Ruof, N. W.; Schubert, A. G.; Shanks, B.; Shirchenko, M.; Snavely, K. J.; Snyder, N.; Steele, D.; Suriano, A. M.; Tedeschi, D.; Tornow, W.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yaver, H.; Young, A. R.; Yu, C.-H.; Yumatov, V.; Zhitnikov, I.; Zhu, B. X.; Zimmermann, S.; Majorana Collaboration

2018-03-01

The Majorana Collaboration is operating an array of high purity Ge detectors to search for neutrinoless double-β decay in Ge 76 . The Majorana Demonstrator comprises 44.1 kg of Ge detectors (29.7 kg enriched in Ge 76 ) split between two modules contained in a low background shield at the Sanford Underground Research Facility in Lead, South Dakota. Here we present results from data taken during construction, commissioning, and the start of full operations. We achieve unprecedented energy resolution of 2.5 keV FWHM at Qβ β and a very low background with no observed candidate events in 9.95 kg yr of enriched Ge exposure, resulting in a lower limit on the half-life of 1.9 ×1025 yr (90% C.L.). This result constrains the effective Majorana neutrino mass to below 240-520 meV, depending on the matrix elements used. In our experimental configuration with the lowest background, the background is 4.0-2.5+3.1 counts /(FWHM t yr ) .

Native oxidation of ultra high purity Cu bulk and thin films

International Nuclear Information System (INIS)

Iijima, J.; Lim, J.-W.; Hong, S.-H.; Suzuki, S.; Mimura, K.; Isshiki, M.

2006-01-01

The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of -50 V (IBD Cu film at V s = -50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V s = 0 V) showed lower oxidation resistance. The growth of Cu 2 O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V s = 0 and -50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu 2 O layer after a critical time

Deuterium permeation and diffusion in high-purity beryllium

International Nuclear Information System (INIS)

Abramov, E.; Riehm, M.P.; Thompson, D.A.; Smeltzer, W.W.

1990-01-01

The permeation rate of deuterium through high-purity beryllium membranes was measured using the gas-driven permeation technique. The time-dependent and the steady-state deuterium flux data were analyzed and the effective diffusivities of the samples were determined. Using multilayer permeation theory the effects of surface oxide were eliminated and the diffusion coefficients of the bulk beryllium determined. The diffusion parameters obtained for the extra-grade beryllium samples (99.8%) are D 0 =6.7x10 -9 m 2 /s and E D =28.4 kJ/mol. For the high-grade beryllium samples (99%) the parameters are D 0 =8.0x10 -9 m 2 /s and E D =35.1 kJ/mol. (orig.)

State-of-the-art in analytical characterization of high purity solid ...

Indian Academy of Sciences (India)

Facilities and some results of several spectroscopic methods which have potential applications in the field of analysis of solid high purity substances and which have been elaborated in Russia, will be discussed in this paper. Laser nondispersive atomic fluorescence method with glow discharge cathode sputtering atomiser, ...

Fabrication of novel cryomill for synthesis of high purity metallic nanoparticles

Science.gov (United States)

Kumar, Nirmal; Biswas, Krishanu

2015-08-01

The successful preparation of free standing metal nanoparticles with high purity in bulk quantity is the pre-requisite for any potential application. This is possible by using ball milling at cryogenic temperature. However, the most of ball mills available in the market do not allow preparing high purity metal nanoparticles by this route. In addition, it is not possible to carry out in situ measurements of process parameters as well as diagnostic of the process. In the present investigation, we present a detailed study on the fabrication of a cryomill, which is capable of avoiding contaminations in the product. It also provides in situ measurements and diagnostic of the low temperature milling process. Online monitoring of the milling temperature and observation of ball motion are the important aspects in the newly designed mill. The nanoparticles prepared using this fabricated mill have been found to be free standing and also free from contaminations.

High purity zirconium obtainment through the iodine compounds transport method

International Nuclear Information System (INIS)

Bolcich, J.C.; Zuzek, E.; Dutrus, S.M.; Corso, H.L.

1987-01-01

This paper describes the experimental method and the equipment designed, constructed and actually applied for the high purity zirconium obtainment from a zirconium sponge of the nuclear type. The mechanism of purification is based on the impure metal attack with gaseous iodine (at 200 deg C) to obtain zirconium tetra iodine as main product which is then transformed into a pure zirconium base (at 1000-1300 deg C), precipitating the metallic zirconium and releasing the gaseous iodine. From the first experiences carried out, pure zirconium has been obtained from an initial filament of 0.5 mm of diameter as well as wires up to 2.5 mm of diameter. This work presents the results from the studies and analysis made to characterize the material obtained. Finally, the refining methods to which the zirconium produced may be submitted so as to optimize the final purity are discussed. (Author)

Recycling of high purity selenium from CIGS solar cell waste materials

Energy Technology Data Exchange (ETDEWEB)

Gustafsson, Anna M.K., E-mail: anna.gustafsson@chalmers.se; Foreman, Mark R.StJ.; Ekberg, Christian

2014-10-15

Highlights: • A new method for recycling of selenium from CIGS solar cell materials is presented. • Separation of selenium as selenium dioxide after heating in oxygen atmosphere. • Complete selenium separation after oxidation of <63 μm particles at 800 °C for 1 h. • After reduction of selenium dioxide the selenium purity was higher than 99.999 wt%. - Abstract: Copper indium gallium diselenide (CIGS) is a promising material in thin film solar cell production. To make CIGS solar cells more competitive, both economically and environmentally, in comparison to other energy sources, methods for recycling are needed. In addition to the generally high price of the material, significant amounts of the metals are lost in the manufacturing process. The feasibility of recycling selenium from CIGS through oxidation at elevated temperatures was therefore examined. During oxidation gaseous selenium dioxide was formed and could be separated from the other elements, which remained in solid state. Upon cooling, the selenium dioxide sublimes and can be collected as crystals. After oxidation for 1 h at 800 °C all of the selenium was separated from the CIGS material. Two different reduction methods for reduction of the selenium dioxide to selenium were tested. In the first reduction method an organic molecule was used as the reducing agent in a Riley reaction. In the second reduction method sulphur dioxide gas was used. Both methods resulted in high purity selenium. This proves that the studied selenium separation method could be the first step in a recycling process aimed at the complete separation and recovery of high purity elements from CIGS.

Development of a nano-zirconia based {sup 68}Ge/{sup 68}Ga generator for biomedical applications

Energy Technology Data Exchange (ETDEWEB)

Chakravarty, Rubel [Radiopharmaceuticals Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Shukla, Rakesh [Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Ram, Ramu [Radiopharmaceuticals Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Tyagi, Avesh Kumar [Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Dash, Ashutosh, E-mail: adash@barc.gov.i [Radiopharmaceuticals Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Venkatesh, Meera [Radiopharmaceuticals Division, Bhabha Atomic Research Centre, Mumbai-400085 (India)

2011-05-15

Introduction: Most of the commercially available {sup 68}Ge/{sup 68}Ga generator systems are not optimally designed for direct applications in a clinical context. We have developed a nano-zirconia based {sup 68}Ge/{sup 68}Ga generator system for accessing {sup 68}Ga amenable for the preparation of radiopharmaceuticals. Methods: Nano-zirconia was synthesized by the in situ reaction of zirconyl chloride with ammonium hydroxide in alkaline medium. The physical characteristics of the material were studied by various analytical techniques. A 740 MBq (20 mCi) {sup 68}Ge/{sup 68}Ga generator was developed using this sorbent and its performance was evaluated for a period of 1 year. The suitability of {sup 68}Ga for labeling biomolecules was ascertained by labeling DOTA-TATE with {sup 68}Ga. Results: The material synthesized was nanocrystalline with average particle size of {approx}7 nm, pore-size of {approx}4 A and a high surface area of 340{+-}10 m{sup 2} g{sup -1}. {sup 68}Ga could be regularly eluted from this generator in 0.01N HCl medium with an overall radiochemical yield >80% and with high radionuclidic (<10{sup -5}% of {sup 68}Ge impurity) and chemical purity (<0.1 ppm of Zr, Fe and Mn ions). The compatibility of the product for preparation of {sup 68}Ga-labeled DOTA-TATE under the optimized reaction conditions was found to be satisfactory in terms of high labeling yields (>99%). The generator gave a consistent performance with respect to the elution yield and purity of {sup 68}Ga over a period of 1 year. Conclusions: The feasibility of preparing an efficient {sup 68}Ge/{sup 68}Ga generator which can directly be used for biomedical applications has been demonstrated.

An ICP AES method for determination of dysprosium and terbium in high purity yttrium oxide

International Nuclear Information System (INIS)

Rupawate, V.H.; Hareendran, K.N.; Roy, S.B.

2011-01-01

High purity yttrium finds interesting application in astronavigation, luminescence, nuclear energy and metallurgical industries. Most of these applications require yttrium oxide of highest purity. Consequently there is a need for production of high purity yttrium oxide. Separation and purification of yttrium from other rare earths is a challenging task due to their close chemical properties. Liquid-liquid extraction and ion exchange have been widely used in the production of yttrium oxide of highest purity. Determination of impurities, especially other rare earths, in ppm level is required for process development and chemical characterization of the high purity Y 2 O 3 . Many methods have been described in literature. However since the advent of ICP AES much work in this area has been carried out by this technique. This paper describes the work done for determination of dysprosium (Dy) and terbium (Tb) in yttrium oxide using a high resolution sequential ICP AES. Emission spectra of rare earth elements are very complex and due to this complexity it is important to select spectral interference free analyte lines for determination of rare earths in rare earth matrix. For the determination of Dy and Tb in Y 2 O 3 , sensitive lines of Dy and Tb are selected from the instrument wavelength table and spectral interference free emission lines for the determination is selected by scanning around the selected wavelengths using 5 g/L Y solution and 5 mg/L standard solutions of Dy and Tb prepared in 4% nitric acid. It is found 353.170 nm line of Dy and 350.917 nm line Tb is suitable for quantitative determination. The signal to background ratio increases with increase in matrix concentration, i.e. from 1 to 5 mg/L. The optimum forward power is determined and it is found to be 1100W for Dy and 1000W for Tb. The instrument is calibrated using matrix matched standards containing 5g/L of Y matrix. Samples are dissolved in nitric acid and Y concentration is maintained at 5g/L. Two

Void swelling in fast reactor irradiated high purity binary iron-chromium alloys

International Nuclear Information System (INIS)

Little, E.A.; Stow, D.A.

The void swelling characteristics of a series of high purity binary iron-chromium alloys containing 0 - 615 0 C. The void swelling behaviour can be qualitatively rationalized in terms of point defect trapping and precipitation processes involving chromium atoms

High purity samarium oxide from mixed rare earth carbonates

International Nuclear Information System (INIS)

Queiroz, Carlos A. da S.; Seneda, Jose A.; Vasconcellos, Mari E. de; Pedreira Filho, Walter dos R.

2013-01-01

A simple and economical chemical process for the production of highly pure samarium oxides is discussed. The raw material, which was used in the form of rare earth carbonates was produced industrially from the chemical treatment of Brazilian monazite. Ion exchange chromatography was performed using a strong cationic resin that is typically employed in water treatment processes to fractionate rare earth elements (REE) without the use of retention ions. Under these conditions, 99.9% pure Sm 2 O 3 was eluted using the ammonium salt of ethylenediaminetetraacetic acid (EDTA) at a controlled pH. The EDTA-samarium complex was separated from EDTA and then precipitated as oxalate and fired to samarium oxide. Molecular absorption spectrophotometry was used to monitor the samarium content during the proposed process, and sector field inductively coupled plasma mass spectrometry was used to certify the purity of the samarium oxide. Typical samarium oxide obtained from the proposed procedure contained the following contaminants in micrograms per gram: Sc (20.90); Y (11.80); La (8.4); Ce (4.3); Pr (2.5); Nd (5.1); Eu (94); Gd (114); Tb (3.6); Dy (2.5), Ho (2.3); Er (3.0); Tm (2.3); Yb (38,2); Lu (25.6). The high-purity samarium oxides produced in the present study can be used as an alternative to imported products in research and development applications. (author)

Deuterium permeation and diffusion in high purity beryllium

International Nuclear Information System (INIS)

Abramov, E.

1990-05-01

The permeation rate of deuterium through high-purity beryllium membranes was measured using the gas-driven permeation technique. The time-dependent and the steady-state deuterium flux data were analyzed and the effective diffusivities of the samples were determined. A multilayer permeation theory was used in order to eliminate the surface oxide effects and the diffusion coefficients of the bulk beryllium were determined. The diffusion parameters obtained for the extra-grade beryllium samples (99.8%) are D 0 = 6.7 x 10 -9 [m 2 /s] and E D = 28.4 [KJ/mol]; and for the high-grade beryllium samples (99%) the parameters are D 0 = 8.0 x 10 -9 [m 2 /s] and E D = 35.1 [KJ/mol

Investigation of electrochemical reduction of GeO2 to Ge in molten CaCl2-NaCl

International Nuclear Information System (INIS)

Rong, Liangbin; He, Rui; Wang, Zhiyong; Peng, Junjun; Jin, Xianbo; Chen, George Z.

2014-01-01

Electrochemical reduction of solid GeO 2 has been investigated in the mixed CaCl 2 -NaCl melt at 1023 K for developing a more efficient process for preparation of Ge. Cyclic voltammetry and potentiostatic electrolysis were applied to study the GeO 2 -loaded metallic cavity electrode. In addition, porous GeO 2 pellets were reduced by potentiostatic and constant cell voltage electrolysis with a graphite anode, and the electrolysis products were analyzed by powder X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectrometry, focusing on understanding the reduction mechanism and the impact of electrode potential on the product purity. It was found that the reduction of GeO 2 to Ge occurred at a potential of about -0.50 V (vs. Ag/Ag + ), but generating various calcium germanates simultaneously, whose reduction was a little more difficult and needed a potential more negative than -1.00 V. However, if the cathode potential exceeded -1.60 V, Ca (or Na) - Ge intermetallic compounds might form. These results gave an appropriate potential range between -1.10 and -1.40 V for the production of pure germanium. Rapid electrolysis of GeO 2 to pure Ge has been realized at a cell voltage of 2.5 V with a current efficiency of about 92%

Recovery of high-purity metallic Pd from Pd(II)-sorbed biosorbents by incineration.

Science.gov (United States)

Won, Sung Wook; Lim, Areum; Yun, Yeoung-Sang

2013-06-01

This work reports a direct way to recover metallic palladium with high purity from Pd(II)-sorbed polyethylenimine-modified Corynebacterium glutamicum biosorbent using a combined method of biosorption and incineration. This study is focused on the incineration part which affects the purity of recovered Pd. The incineration temperature and the amount of Pd loaded on the biosorbent were considered as major factors in the incineration process, and their effects were examined. The results showed that both factors significantly affected the enhancement of the recovery efficiency and purity of the recovered Pd. SEM-EDX and XRD analyses were used to confirm that Pd phase existed in the ash. As a result, the recovered Pd was changed from PdO to zero-valent Pd as the incineration temperature was increased from 600 to 900°C. Almost 100% pure metallic Pd was recovered with recovery efficiency above 99.0% under the conditions of 900°C and 136.9 mg/g. Copyright © 2013 Elsevier Ltd. All rights reserved.

High-purity Cu nanocrystal synthesis by a dynamic decomposition method

OpenAIRE

Jian, Xian; Cao, Yu; Chen, Guozhang; Wang, Chao; Tang, Hui; Yin, Liangjun; Luan, Chunhong; Liang, Yinglin; Jiang, Jing; Wu, Sixin; Zeng, Qing; Wang, Fei; Zhang, Chengui

2014-01-01

Cu nanocrystals are applied extensively in several fields, particularly in the microelectron, sensor, and catalysis. The catalytic behavior of Cu nanocrystals depends mainly on the structure and particle size. In this work, formation of high-purity Cu nanocrystals is studied using a common chemical vapor deposition precursor of cupric tartrate. This process is investigated through a combined experimental and computational approach. The decomposition kinetics is researched via differential sca...

Simultaneous determination of dysprosium, holmium and erbium in high purity rare earth oxides by second order derivative spectrophotometry

International Nuclear Information System (INIS)

Anbu, M.; Prasada Rao, T.; Iyer, C. S. P.; Damodaran, A. D.

1996-01-01

High purity individual rare earth oxides are increasingly used as major components in lasers (Y 2 O 3 ), phosphors (YVO 3 , Eu 2 O 3 ), magnetic bubble memory films (Gd 2 O 3 ) and refractive-index lenses and fibre optics (La 2 O 3 ). The determination of individual lanthanides in high purity rare earth oxides is a more important and difficult task. This paper reports the utilization of higher order derivative spectrophotometry for the simultaneous determination of dysprosium, holmium and erbium in high purity rare earth oxides. The developed procedure is simple, reliable and allows the determination of 0.001 to 0.2% of dysprosium, holmium and erbium in several rare earth. (author). 9 refs, 2 figs, 2 tabs

High-pressure structural behaviour of nanocrystalline Ge

International Nuclear Information System (INIS)

Wang, H; Liu, J F; He, Y; Wang, Y; Chen, W; Jiang, J Z; Olsen, J Staun; Gerward, L

2007-01-01

The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transition remains constant. Simplified models for the high-pressure structural behaviour are presented, based on the assumption that a large fraction of the atoms reside in grain boundary regions of the nanocrystalline material. The interface structure plays a significant role in affecting the transition pressure and the bulk modulus

Dissolution of high-purity lead and subsequent crystal growth during the preparation of corrosion coupons

Energy Technology Data Exchange (ETDEWEB)

McGarvey, G.B. [Atomic Energy of Canada Limited, Chalk River, Ontario (Canada); McDougall, T.E.; Owen, D.G. [Atomic Energy of Canada Limited, Pinawa, Manitoba (Canada)

1997-07-01

High-purity lead discs were prepared using several combinations of polishing, rinsing and ultrasonic treatment. Physical degradation of the lead surface and the premature generation and deposition of oxides on the surface were observed for certain combinations of preparation steps. Ultrasonic treatment of the discs was found to be particularly detrimental as it induced significant crystal growth and, in several instances, deterioration of the polished surface. Simple air drying of freshly rinsed discs also led to oxide formation on the surface after as short a time as 1 min. An effective method for preparing discs from high-purity lead is described. (author)

Dissolution of high-purity lead and subsequent crystal growth during the preparation of corrosion coupons

International Nuclear Information System (INIS)

McGarvey, G.B.; McDougall, T.E.; Owen, D.G.

1997-01-01

High-purity lead discs were prepared using several combinations of polishing, rinsing and ultrasonic treatment. Physical degradation of the lead surface and the premature generation and deposition of oxides on the surface were observed for certain combinations of preparation steps. Ultrasonic treatment of the discs was found to be particularly detrimental as it induced significant crystal growth and, in several instances, deterioration of the polished surface. Simple air drying of freshly rinsed discs also led to oxide formation on the surface after as short a time as 1 min. An effective method for preparing discs from high-purity lead is described. (author)

Passivation of Ge/high-κ interface using RF Plasma nitridation

Science.gov (United States)

Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

2018-01-01

In this paper, plasma nitridation of a germanium surface using NH3 and N2 gases is performed with a standard RF-PECVD method at a substrate temperature of 250 °C. The structural and optical properties of the Ge surface have been investigated using Atomic Force Microscopy (AFM), Fourier Transform Infrared Spectroscopy (FT-IR), and Variable Angle Spectroscopic Ellipsometery (VASE). Study of the Ge (100) surface revealed that it is nitrated after plasma treatment while the GeO2 regrowth on the surface has been suppressed. Also, stability of the treated surface under air exposure is observed, where all the measurements were performed at room ambient. The electrical characteristics of fabricated Al/Ti/HfO2/GeON/p-Ge capacitors using the proposed surface treatment technique have been investigated. The C-V curves indicated a negligible hysteresis compared to ˜500 mV observed in untreated samples. Additionally, the C-V characteristic is used to extract the high-κ/Ge interface trap density using the most commonly used methods in determining the interface traps. The discussion includes the Dit calculation from the high-low frequency (Castagné-Vapaille) method and Terman (high-frequency) method. The high-low frequency method indicated a low interface trap density of ˜2.5 × 1011 eV-1.cm-2 compared to the Terman method. The J-V measurements revealed more than two orders of magnitude reduction of the gate leakage. This improved Ge interface quality is a promising low-temperature technique for fabricating high-performance Ge MOSFETs.

Release characteristics of tritium from high-purity lithium oxide

International Nuclear Information System (INIS)

O'Kula, K.R.; Vogelsang, W.F.

1985-01-01

Rates of tritium release from neutronirradiated lithium oxide were determined from isothermal release experiments. High-purity, monocrystalline lithium oxide was purged ex-reactor with helium and helium-hydrogen gas streams. Overall release was found to be controlled by solid-phase diffusion, and was predominantly in the form of condensible species. The result of an independent concentration profile analysis at 923 K was in agreement with the gas release diffusion coefficient. Sweeping the Li 2 O with hydrogen-containing gas was found to enhance tritium removal during the early stage of each run

Trace elements in high purity materials for advanced technology: contribution of neutron activation analysis and radioanalytical technique

International Nuclear Information System (INIS)

Gallorini, M.; Pietra, R.; Sabbioni, E.

1991-01-01

Neutron activation analysis and radioanalytical techniques have been employed to investigate problems related to trace elements and high purity technology materials. Applications of these techniques are overviewed: semiconductor technology as in the case of As and In ion implantation in high purity silicon; problems related to trace elements impurities in thermometric measurements; coating materials to prevent trace elements contamination in biological sampling and metals release from human prostheses. (author) 8 refs.; 2 figs.; 8 tabs

Process for producing high purity isoolefins and dimers thereof by dissociation of ethers

Science.gov (United States)

Smith, L.A. Jr.; Jones, E.M. Jr.; Hearn, D.

1984-05-08

Alkyl tertiary butyl ether or alkyl tertiary amyl ether is dissociated by vapor phase contact with a cation acidic exchange resin at temperatures in the range of 150 to 250 F at LHSV of 0.1 to 20 to produce a stream consisting of unreacted ether, isobutene or isoamylene and an alcohol corresponding to the alkyl radical. After the alcohol is removed, the ether/isoolefin stream may be fractionated to obtain a high purity isoolefin (99+%) or the ether/isoolefin stream can be contacted in liquid phase with a cation acidic exchange resin to selectively dimerize the isoolefin in a highly exothermic reaction, followed by fractionation of the dimerization product to produce high purity diisoolefin (97+%). In the case where the alkyl is C[sub 3] to C[sub 6] and the corresponding alcohol is produced on dissociation of the ether, combined dissociation-distillation may be carried out such that isoolefin is the overhead product and alcohol the bottom. 2 figs.

Preparation of High Purity CdTe for Nuclear Detector: Electrical and Nuclear Characterization

Science.gov (United States)

Zaiour, A.; Ayoub, M.; Hamié, A.; Fawaz, A.; Hage-ali, M.

High purity crystal with controllable electrical properties, however, control of the electrical properties of CdTe has not yet been fully achieved. Using the refined Cd and Te as starting materials, extremely high-purity CdTe single crystals were prepared by the traditional vertical THM. The nature of the defects involved in the transitions was studied by analyzing the position of the energy levels by TSC method. The resolution of 4.2 keV (FWHM) confirms the high quality and stability of the detectors: TSC spectrum was in coherence with detectors spectrum with a horizontal plate between 0.2 and 0.6 eV. The enhancement in resolution of detectors with a full width at half- maximum (less than 0.31 meV), lead to confirm that the combination of vacuum distillation and zone refining was very effective to obtain more purified CdTe single crystals for photovoltaic or nuclear detectors with better physical properties.

High-Purity Fe3S4 Greigite Microcrystals for Magnetic and Electrochemical Performance

NARCIS (Netherlands)

Li, Guowei; Zhang, Baomin; Yu, Feng; Novakova, Alla A.; Krivenkov, Maxim S.; Kiseleva, Tatiana Y.; Chang, Liao; Rao, Jiancun; Polyakov, Alexey O.; Blake, Graeme R.; de Groot, Robert A.; Palstra, Thomas T. M.

2014-01-01

High-purity Fe3S4 (greigite) microcrystals with octahedral shape were synthesized via a simple hydrothermal method using a surfactant. The as-prepared samples have the inverse spinel structure with high crystallinity. The saturation magnetization (M-s) reaches 3.74 mu(B) at 5 K and 3.51 mu(B) at

Approaches to the accurate characterization of high purity metal fluorides and fluoride glasses

Science.gov (United States)

Beary, E. S.; Paulsen, P. J.; Rains, T. C.; Ewing, K. J.; Jaganathan, J.; Aggarwal, I.

1990-11-01

The analytical challenges posed by the measurement of trace contaminants in high purity metal fluorides require that innovative chemical preparation procedures be used to enhance existing instrumental techniques. The instrumental techniques used to analyze these difficult matrices must be sensitive enough to detect extremely low levels of trace impurities, and the background interferences derived from the matrix (metal fluoride or glass) must be minimized. A survey of analytical techniques that have the necessary characteristics to analyze these materials will be given. In addition, means of controlling the chemical blank will be presented. Mass and atomic spectrometric techniques will be discussed, specifically graphite furnace atomic absorption spectrometry (GFAAS) and inductively coupled plasma-mass spectrometry (ICP-MS). Analytical procedures using GFAAS and ICP-MS have been developed to determine sub ppb (part per billion) levels of contaminants in high purity fluoride materials.

Recent developments in high purity niobium metal production at CBMM

International Nuclear Information System (INIS)

Abdo, Gustavo Giovanni Ribeiro; Sousa, Clovis Antonio de Faria; Guimarães, Rogério Contato; Ribas, Rogério Marques; Vieira, Alaércio Salvador Martins; Menezes, Andréia Duarte; Fridman, Daniel Pallos; Cruz, Edmundo Burgos

2015-01-01

CBMM is a global supplier of high quality niobium products including pure niobium, the focus of this paper. CBMM’s position has been consolidated over three decades of producing high purity niobium metal ingots. The company supplies, among other products, commercial and reactor grade niobium ingots. One of the main uses of CBMM’s ingots is for the manufacture of particle accelerators (superconducting radio frequency – SRF – cavities), where the purity and homogeneity of niobium metal is essentially important for good performance. CBMM constantly strives to improve process controls and product quality, and is currently implementing innovations in production, research and development to further improve ingot quality. The main aim is to reduce the content of interstitial elements, such as nitrogen (N), oxygen (O), carbon (C), and hydrogen (H), starting with the raw materials through the final step of ingot production. CBMM held the first trial to produce the world’s largest-diameter niobium ingot (as cast 535 mm). The results of this initial trial presented very low levels of interstitial impurities (N, O, C, H), allowing the achievement of residual resistivity ratio (RRR) values very close to 300 in a six-melt process in an electron beam furnace. These values were reached with 850 ppm of tantalum. SRF cavities will be produced with this material in order to study the effect of low impurities and high RRR on the Q factor and accelerating gradient

High purity heavy water production: need for total organic carbon determination in process water streams

International Nuclear Information System (INIS)

Ayushi; Kumar, Sangita D.; Reddy, A.V.R.; Vithal, G.K.

2009-01-01

In recent times, demand for high purity heavy water (99.98% pure) in industries and laboratories has grown by manifold. Its application started in nuclear industry with the design of CANDU reactor, which uses natural uranium as fuel. In this reactor the purest grade of heavy water is used as the moderator and the primary coolant. Diverse industrial applications like fibre optics, medicine, semiconductors etc. use high purity heavy water extensively to achieve better performance of the specific material. In all these applications there is a stringent requirement that the total organic carbon content (TOC) of high purity heavy water should be very low. This is because the presence of TOC can lead to adverse interactions in different applications. To minimize the TOC content in the final product there is a need to monitor and control the TOC content at each and every stage of heavy water production. Hence a simple, rapid and accurate method was developed for the determination of TOC content in process water samples. The paper summarizes the results obtained for the TOC content in the water samples collected from process streams of heavy water production plant. (author)

Charge collection performance of a segmented planar high-purity germanium detector

Energy Technology Data Exchange (ETDEWEB)

Cooper, R.J. [Department of Physics, The University of Liverpool, Oliver Lodge Laboratory, Liverpool Merseyside L69 7ZE (United Kingdom)], E-mail: R.Cooper@liverpool.ac.uk; Boston, A.J.; Boston, H.C.; Cresswell, J.R.; Grint, A.N.; Harkness, L.J.; Nolan, P.J.; Oxley, D.C.; Scraggs, D.P. [Department of Physics, The University of Liverpool, Oliver Lodge Laboratory, Liverpool Merseyside L69 7ZE (United Kingdom); Lazarus, I.; Simpson, J. [STFC Daresbury Laboratory, Warrington, Cheshire WA4 4AD (United Kingdom); Dobson, J. [Rosemere Cancer Centre, Royal Preston Hospital, Preston PR2 9HT (United Kingdom)

2008-10-01

High-precision scans of a segmented planar high-purity germanium (HPGe) detector have been performed with a range of finely collimated gamma ray beams allowing the response as a function of gamma ray interaction position to be quantified. This has allowed the development of parametric pulse shape analysis (PSA) techniques and algorithms for the correction of imperfections in performance. In this paper we report on the performance of this detector, designed for use in a positron emission tomography (PET) development system.

Amplitude dependent damping in single crystalline high purity molybdenum

International Nuclear Information System (INIS)

Zelada-Lambri, G.I; Lambri, O.A; Garcia, J.A; Lomer, J.N

2004-01-01

Amplitude dependent damping measurements were performed on high purity single crystalline molybdenum at several different constant temperatures between room temperature and 1273K. The employed samples were single crystals with the orientation, having a residual resistivity ratio of about 8000. Previously to the amplitude dependent damping tests, the samples were subjected to different thermomechanical histories. Amplitude dependent damping effects appear only during the first heating run in temperature where the samples have the thermomechanical state of the deformation process at room temperature. In the subsequent run-ups in temperature, i.e, after subsequent annealings, amplitude dependent damping effects were not detected (au)

Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Maggioni, G., E-mail: maggioni@lnl.infn.it [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Fiorese, L. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Pinto, N.; Caproli, F. [Scuola di Scienze e Tecnologie, Sezione di Fisica, Università di Camerino, Via Madonna delle Carceri 9, Camerino (Italy); INFN, Sezione di Perugia, Perugia (Italy); Napoli, D.R. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Giarola, M.; Mariotto, G. [Dipartimento di Informatica—Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy)

2017-01-30

Highlights: • A surface passivation method for HPGe radiation detectors is proposed. • Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature. • Deposition parameters affect composition and electrical properties of the layers. • The improved performance of a GeNx-coated HPGe diode is assessed. - Abstract: This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

The 76Ge Program to Search for Neutrinoless Double-Beta Decay

Science.gov (United States)

Guiseppe, Vincente

2017-09-01

Neutrinoless double-beta decay searches play a major role in determining the nature of neutrinos, the existence of a lepton violating process, and the effective Majorana neutrino mass. The Majorana and Gerda Collaborations are operating arrays of high purity Ge detectors to search for neutrinoless double-beta decay in 76Ge. The Majorana Demonstrator is operating at the Sanford Underground Research Facility in South Dakota while the Gerda experiment is operating at LNGS in Italy. The Gerda and Majorana Demonstrator experiments have achieved the lowest backgrounds in the neutrinoless double-beta decay region of interest. These results, coupled with the superior energy resolution (0.1%) of Ge detectors demonstrate that 76Ge is an ideal isotope for a large next generation experiment. The LEGEND collaboration, with 220 members from 47 institutions around the world, has been formed to pursue a ton scale 76Ge experiment. Building on the successes of Gerda and Majorana, the LEGEND collaboration aims to develop a phased neutrinoless double-beta decay experimental program with discovery potential at a half-life significantly longer than 1027 years. This talk will present the initial results from the Majorana Demonstrator and Gerda experiments and the plan for the LEGEND program.

Comparison of Deformation in High-Purity Single/Large Grain and Polycrystalline Niobium Superconducting Cavities

International Nuclear Information System (INIS)

Ganapati Rao Myneni; Peter Kneisel

2005-01-01

The current approach for the fabrication of superconducting radio frequency (SRF) cavities is to roll and deep draw sheets of polycrystalline high-purity niobium. Recently, a new technique was developed at Jefferson Laboratory that enables the fabrication of single-crystal high-purity Nb SRF cavities. To better understand the differences between SRF cavities fabricated out of fine-grained polycrystalline sheet in the standard manner and single crystal cavities fabricated by the new technique, two half-cells were produced according to the two different procedures and compared using a variety of analytical techniques including optical microscopy, scanning laser confocal microscopy, profilometry, and X-ray diffraction. Crystallographic orientations, texture, and residual stresses were determined in the samples before and after forming and this poster presents the results of this ongoing study

Human parvovirus B19 infection in hemophiliacs first infused with two high-purity, virally attenuated factor VIII concentrates.

Science.gov (United States)

Azzi, A; Ciappi, S; Zakvrzewska, K; Morfini, M; Mariani, G; Mannucci, P M

1992-03-01

Human parvovirus B19 can be transmitted by coagulation factor concentrates and is highly resistant to virucidal methods. To evaluate whether the additional removal of virus by chromatographic methods during the manufacture of high-purity concentrates reduces the risk of B19 transmission, we have prospectively evaluated the rate of anti-B19 seroconversion in two groups of susceptible (anti-B19 negative) hemophiliacs infused with high-purity, heated (pasteurized) or solvent-detergent-treated factor VIII concentrates. Both products infected a relatively high proportion of patients (nine of 20).

High purity and semi-insulating 4H-SiC crystals grown by physical vapor transport

Energy Technology Data Exchange (ETDEWEB)

Augustine, G.; Hobgood, H.McD.; Balakrishna, V.; Dunne, G.T.; Hopkins, R.H.; Thomas, R.N. [Northrop Grumman Corp., Pittsburgh, PA (United States). Science and Technology Center; Doolittle, W.A.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical and Computer Engineering

1998-06-01

High purity undoped and semi-insulating vanadium doped 4H-SiC single crystals with diameters up to 50 mm were grown by the physical vapor transport method. Undoped crystals exhibiting resistivities in the 10{sup 2} to 10{sup 3} {Omega}-cm range and photoconductive decay (PCD) lifetimes in the 2 to 9 {mu}s range, were grown from high purity SiC sublimation sources. The crystals were p-type due to the presence of residual acceptor impurities, mainly boron. The semi-insulating behavior of the vanadium doped crystals is attributed to compensation of residual acceptors by the deep level vanadium donor located near the middle of the band gap. (orig.) 6 refs.

Preparation of high-purity cerium nitrate; Preparacao de nitrato de cerio de alta pureza

Energy Technology Data Exchange (ETDEWEB)

Avila, Daniela Moraes; Silva Queiroz, Carlos Alberto da; Santos Mucillo, Eliana Navarro dos [Instituto de Pesquisas Energeticas e Nucleares (IPEN), Sao Paulo, SP (Brazil)

1995-12-31

The preparation of high-purity cerium nitrate has been carried out Cerium oxide has been prepared by fractioned precipitation and ionic exchange techniques, using a concentrate with approximately 85% of cerium oxide from NUCLEMON as raw material. Five sequential ion-exchange columns with a retention capacity of 170 g each have been used. The ethylenediamine-tetraacetic acid (EDTA) was used as eluent. The cerium content has been determined by gravimetry and iodometry techniques. The resulting cerium oxide has a purity > 99%. This material was transformed in cerium nitrate to be used as precursor for the preparation of Zirconia-ceria ceramics by the coprecipitation technique. (author) 2 tabs.

Rare earth impurities in high purity lanthanum oxide determined by neutron activation analysis

International Nuclear Information System (INIS)

Nguyen Van Suc; Desai, H.B.; Parthasarathy, R.; Gangadharan, S.

1992-01-01

Individual rare earth impurities in high purity La 2 O 3 (≥99.9%) have been determined by NAA after pre-separation of the matrix (La). The separation is carried out on an anion exchanger (Dowex 1x8) using different mixtures of methanol/nitric acid as eluants. The rare earth elements from Dy to Lu are eluted quantitatively using a 10% 1M HNO 3 - 90% methanol mixture, while the light rare earths from Ce to Gd are eluted quantitatively using a 10% 0.05M HNO 3 - 90% methanol mixture. La, which is retained on the column, is eluted using 0.1M HNO 3 . The recoveries of the various rare earth elements have been checked using radiotracers and also by spiking the sample with known amount of elements, and the recoveries are found to be quantitative. Results obtained on a typical high purity lanthanum oxide are reported here. (author) 5 refs.; 1 fig

Radiochemical neutron activation analysis based multi-elemental analysis of high purity gallium

International Nuclear Information System (INIS)

Tashimova, F.A.; Sadikov, I.I; Salimov, M.I.; Zinov'ev, V.G.

2006-01-01

Full text: Gallium is one of the widely used materials in semiconductor and optoelectronics industry. Gallium is used to produce infrared detectors, piezoelectric sensors, high- and low-temperature transistors for space and defense technology. One of the most important requirements for semiconductor materials of gallium compounds is an excessive high purity for layers and films. Information on impurities (type of an impurity, concentration, character of distribution) is important as for better understanding of the physical and chemical processes taking place in formed semiconductor structures and for the 'know-how' of devices on their basis. The object of this work is to develop radiochemical neutron activation technique for analysis of high purity gallium. Irradiation of 0.1 g of gallium sample in neutron flux of 5·10 13 cm -2 s -1 for 5 hours will result in induced activity of more than 10 8 Bq, due to 72 Ga radionuclide, half-life of which is 14.1 hours. Therefore to perform instrumental NAA of gallium long period (10 day) cooling is required, and high sensitive determination of elements producing short- and long-lived radionuclides (T 1/2 72 Ga. We have studied the behavior of gallium in extraction-chromatographic system 'TBP-HCl'. The experiments have shown that higher factor of distribution (D) and capacity on gallium can be achieved when 'TBP-4M HCl' system is used. However more than 10 trace elements have high D and thus they cannot be separated from 72 Ga. To resolve the problem and increase the number of separated trace elements we have used preliminary satisfaction of chromatographic column with tellurium, which has D higher than the most of elements in 'TBP-4M HCl' system and thus suppresses extraction of elements. Distribution profile of gallium along the column and elution curve of 25 trace elements have been measured. Chemical yields of separated elements measured by using radiotracers are more than 93%. On the basis of the carried out researches

Obtention of high purity silica from the flotation waste of itabiritic ore

International Nuclear Information System (INIS)

Martins, Polyana Fabricia Fernandes

2016-01-01

Banded iron formations are exploited as iron mineral in 'Quadrilatero Ferrifero' of Minas Gerais (MG) State, Brazil. About half of the amount of extracted material becomes tailings, which are stored in tailing dams or used for filling mining pits. Tens of thousands of tons are generated daily in operating mines in this region, causing concern about the environmental liabilities, and costs to manage the tailing dams. Miners are committed to finding uses for these wastes in other productive chains. This thesis aimed to obtain high purity silica from the flotation tailings of banded iron formations using classical techniques for ore processing, such as particle size classification and magnetic separation, followed by hydrometallurgical leaching, also alkaline fusion and chemical precipitation. The tailings samples was collected in the tailings dam of Peak Mine operated by Vale A.S., in Itabirito – MG. This sample had initially 33.4% by weight SiO 2 , 57.4% wt Fe 2 O 3 and 8.31% wt Al 2 O 3 . After desliming for disposal of the fine particles (-37μm) the composition was 68.0% SiO 2 , 31.4% Fe 2 O 3 and 0.50% Al 2 O 3 . After magnetic separation, the composition was 93.8% SiO 2 , 1.16% Fe 2 O 3 and 3.80% Al 2 O 3 . After acid leaching l or digestion to remove impurities, it was possible to obtain silica with 98% purity. The fusion with sodium hydroxide, followed by alkaline leaching of sodium silicate and silica precipitation gave purities of about 99.5%. Values even higher may be possible with optimization of the parameters of alkaline fusion or by repeating the process from the product with purity of 99.5%. The iron oxide content and the aluminum main contaminants were 0.01% and 0.07%, respectively. Amorphous silica was obtained with high specific surface (322 m 2 /g) and particle size less than 200 nm. Depending on the application, a control should be made for the impurities, such as phosphorus, potassium and boron. (author)

Au-Ge based Candidate Alloys for High-Temperature Lead-Free Solder Alternatives

DEFF Research Database (Denmark)

Chidambaram, Vivek; Hald, John; Hattel, Jesper Henri

2009-01-01

Au-Ge based candidate alloys have been proposed as an alternative to high-lead content solders that are currently being used for high-temperature applications. The influence of the low melting point metals namely In, Sb and Sn to the Au-Ge eutectic with respect to the microstructure and microhard......Au-Ge based candidate alloys have been proposed as an alternative to high-lead content solders that are currently being used for high-temperature applications. The influence of the low melting point metals namely In, Sb and Sn to the Au-Ge eutectic with respect to the microstructure...... was primarily strengthened by the refined (Ge) dispersed phase. The distribution of phases played a relatively more crucial role in determining the ductility of the bulk solder alloy. In the present work it was found that among the low melting point metals, the addition of Sb to the Au-Ge eutectic would...

Preparation of high purity yttrium single crystals by electrotransport

International Nuclear Information System (INIS)

Volkov, V.T.; Nikiforova, T.V.; Ionov, A.M.; Pustovit, A.N.; Sikharulidse, G.G.

1981-01-01

The possibility of obtaining yttrium crystals of high purity by the method of solid state electrotransport (SSE) was investigated in the present work. The behaviour of low contents of iron, aluminium, silicon, tantalum, copper, silver and vanadium as metallic impurities was studied using mass spectrometry. It is shown that all the impurities investigated, except copper, migrate to the anode. During electrotransfer a purification with respect to these impurities by a factor of 4 - 6 is obtained. It is proposed that the diffusion coefficients of the metallic impurities investigated are anomalously high and that the behaviour of the impurities during SSE in adapters necessitates further investigation. By using a three-stage process with intermediate removal of the anode end yttrium single crystals with a resistance ratio rho 293 /rhosub(4.2)=570 were produced. (Auth.)

Investigation of sulphides in iron alloys of high purity

International Nuclear Information System (INIS)

Wyjadlowski, T.

1973-01-01

This research thesis reports the study of the morphology and composition of sulphides in iron alloys with respect to metal composition and to the nature of impurities. In order to understand the specific action of each addition on inclusion morphology, this work has started with high-purity alloys (binary alloys and then ternary alloys). The author studied whether solubility variations would entail either intergranular or intragranular or hybrid iron sulphide precipitation. He examined whether sulphide morphology is depending on thermal treatment, and whether equilibrium precipitates were different in terms of morphology and composition at high and room temperature. He studied the influence of addition elements on sulphide morphology and composition, an important issue as some elements may reduce brittleness. These elements are classified in terms of affinity with sulphur

Germanium field-effect transistor made from a high-purity substrate

International Nuclear Information System (INIS)

Hansen, W.L.; Goulding, F.S.; Haller, E.E.

1978-11-01

Field effect transistors have been fabricated on high-purity germanium substrates using low-temperature technology. The aim of this work is to preserve the low density of trapping centers in high-quality starting material by low-temperature ( 0 C) processing. The use of germanium promises to eliminate some of the traps which cause generation-recombination noise in silicon field-effect transistors (FET's) at low temperatures. Typically, the transconductance (g/sub m/) in the germanium FET's is 10 mA/V and the gate leakage can be less than 10 -12 A. Present devices exhibit a large 1/f noise component and most of this noise must be eliminated if they are to be competitive with silicon FET's commonly used in high-resolution nuclear spectrometers

The ion-exchange obtaining of high purity samarium oxide

International Nuclear Information System (INIS)

Brzyska, W.; Soltysiak, I.; Cygan, J.

1987-01-01

The use of lactic acid - EDTA mixture as an eluent for the obtaining of high purity samarium oxide was studied. The studies were carried out at room temperature on cation exchange resin Wofatit KPS X 8. The best results were obtained for lactic acid (0,26 mol/dm 3 ) - EDTA (0,013 mol/dm 3 ) mixture at pH 3,3. As the result of 57% samarium concentrate elution with column load 1:3 and flow rate 0,4 cm/min, over 99% pure samarium oxide with 73% yield has been obtained. The yield of spectrally pure Sm 2 O 3 exceeded 45%. (author)

Improved procedure for high purity gaseous peroxyacyl nitrate production: use of heavy lipid solvents

Energy Technology Data Exchange (ETDEWEB)

Gaffney, J S; Fajer, R; Senum, G I

1984-01-01

An improved procedure is described for the production of peroxyacyl nitrates (PAN's) in the gas phase. The method of Nielsen et al. (1982) has been modified to yield PAN's of high purity with no further chromatographic purification required. Extraction of PAN's from the nitration of the peracids is accomplished by use of a heavy lipid solvent (n-tridecane). This solvent's low vapor pressure allows the simple separation and preparation of high purity gaseous PAN's (>98%) as determined by Fourier transform infrared spectroscopy (FTIR). Using this method infrared integrated band strengths are reported for peroxyacetyl nitrate (PAN) perdeutero-peroxyacetyl nitrate (PAN-D/sub 3/) and peroxyproprionyl nitrate (PPN). The method allows facile production of large amounts of gaseous PAN's for smog chamber and laboratory studies, toxicological and health effects research, as well as for calibration of PAN analyses.

Shock loading influence on mechanical behavior of high purity iron

International Nuclear Information System (INIS)

Buy, Francois; Voltz, Christophe

2004-01-01

This paper proposes the analysis of shock wave effects for high purity iron. The method developed is based on the characterization of the mechanical behavior of as received and shocked material. Shock effect is generated through plate impact tests performed in the range of 4 GPa to 39 GPa on a single stage light gas gun or a powder gun. Therefore, as-received and impacted materials are characterized. A formalism proposed by J.R.Klepaczko and based on physical relations has been adopted to describe stress strain curves

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

Science.gov (United States)

Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

2017-07-01

The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

In vitro characterization of high purity factor IX concentrates for the treatment of hemophilia B.

Science.gov (United States)

Limentani, S A; Gowell, K P; Deitcher, S R

1995-04-01

This study employed sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE) analysis and immunoblotting to assess the purity of seven high purity factor IX concentrates: Aimafix (Aima), AlphaNine-SD (Alpha Therapeutic), Factor IX VHP (Biotransfusion), Immunine (Immuno), Mononine (Armour Pharmaceutical), Nanotiv (Kabi Pharmacia), and 9MC (Blood Products Laboratory). The mean specific activity of these products ranged from 68 U factor IX/mg (Aimafix) to 246 U factor IX/mg (Mononine). SDS-PAGE analysis showed that the highest purity product, Mononine, had a single contaminating band under non-reducing conditions. Two additional bands were detected when this product was analyzed under reducing conditions. All other products had multiple contaminating bands that were more apparent under reducing than non-reducing conditions. The immunoblot for factor IX showed a dominant factor IX band for all products. In addition, visible light chain of factor IX was detected for AlphaNine-SD, Factor IX VHP, Immunine, Mononine, Nanotiv, and 9MC, suggesting that the factor IX in these products had undergone partial activation to factor IXa. Another contaminating band was visible at 49,500 for all of the products except 9MC. In addition to this band, high molecular weight contaminants were apparent for some products, most notably AlphaNine-SD. The identity of these bands is unknown. Immunoblotting failed to demonstrate factor VII as a contaminant of any of the high purity products, although factor VIIa could be detected in some lots of Immunine, Nanotiv, and 9MC by a clot-based assay. Factor X contaminated Aimafix, AlphaNine-SD, Factor IX VHP, Immunine, Nanotiv, and 9MC, but activation products of factor X were not detected.(ABSTRACT TRUNCATED AT 250 WORDS)

Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

International Nuclear Information System (INIS)

Volynets, Oleksandr

2012-01-01

Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

Energy Technology Data Exchange (ETDEWEB)

Volynets, Oleksandr

2012-07-27

Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

High resolution gamma-ray spectroscopy at high count rates with a prototype High Purity Germanium detector

Science.gov (United States)

Cooper, R. J.; Amman, M.; Vetter, K.

2018-04-01

High-resolution gamma-ray spectrometers are required for applications in nuclear safeguards, emergency response, and fundamental nuclear physics. To overcome one of the shortcomings of conventional High Purity Germanium (HPGe) detectors, we have developed a prototype device capable of achieving high event throughput and high energy resolution at very high count rates. This device, the design of which we have previously reported on, features a planar HPGe crystal with a reduced-capacitance strip electrode geometry. This design is intended to provide good energy resolution at the short shaping or digital filter times that are required for high rate operation and which are enabled by the fast charge collection afforded by the planar geometry crystal. In this work, we report on the initial performance of the system at count rates up to and including two million counts per second.

Prediction of superconducting ternary hydride MgGeH6: from divergent high-pressure formation routes.

Science.gov (United States)

Ma, Yanbin; Duan, Defang; Shao, Ziji; Li, Da; Wang, Liyuan; Yu, Hongyu; Tian, Fubo; Xie, Hui; Liu, Bingbing; Cui, Tian

2017-10-18

Invigorated by the high temperature superconductivity in some binary hydrogen-dominated compounds, we systematically explored high-pressure phase diagrams and superconductivity of a ternary Mg-Ge-H system using ab initio methods. Stoichiometric MgGeH 6 with high hydrogen content exhibiting Pm3[combining macron] symmetry was predicted from a series of high-pressure synthesis paths. We performed an in-depth study on three distinct formation routes to MgGeH 6 , i.e., Mg + Ge + 3H 2 → MgGeH 6 , MgGe + 3H 2 → MgGeH 6 and MgH 2 + GeH 4 → MgGeH 6 at high pressures. By directly squeezing three elemental solids Mg + Ge + 3H 2 , we obtained ternary MgGeH 6 at 200 GPa. By adding a little bit of the MgGe alloy into hydrogen, we found that MgGeH 6 can form and stabilize at about 200 GPa. More intriguingly, upon compressing MgH 2 and GeH 4 to 250 GPa, we also predicted the same MgGeH 6 . Electron structure calculations reveal that the cubic MgGeH 6 is a good metal and takes on ionic character. Electron-phonon coupling calculation reveals a large λ = 1.16 for MgGeH 6 at 200 GPa. In particular, we found that ternary MgGeH 6 could be a potential high temperature superconductor with a superconducting transition temperature T c of ∼67 K at 200 GPa.

Obtaining water with a high degree of purity by using reverse osmosis

Directory of Open Access Journals (Sweden)

Nicolae Chirilă

2011-12-01

Full Text Available In this paper, we used the method of reverse osmosis in order to obtain water with a high degree of purity. For this aim, we used the TKA 20-120ECO device. We completed physic-chemical determinations for the water of supply, as well as for the water obtained after the osmosis process. The results that we obtained are relevant and interesting.

Ge nano-layer fabricated by high-fluence low-energy ion implantation

International Nuclear Information System (INIS)

Lu Tiecheng; Dun Shaobo; Hu Qiang; Zhang Songbao; An Zhu; Duan Yanmin; Zhu Sha; Wei Qiangmin; Wang Lumin

2006-01-01

A Ge nano-layer embedded in the surface layer of an amorphous SiO 2 film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed

A solvent-extraction module for cyclotron production of high-purity technetium-99m.

Science.gov (United States)

Martini, Petra; Boschi, Alessandra; Cicoria, Gianfranco; Uccelli, Licia; Pasquali, Micòl; Duatti, Adriano; Pupillo, Gaia; Marengo, Mario; Loriggiola, Massimo; Esposito, Juan

2016-12-01

The design and fabrication of a fully-automated, remotely controlled module for the extraction and purification of technetium-99m (Tc-99m), produced by proton bombardment of enriched Mo-100 molybdenum metallic targets in a low-energy medical cyclotron, is here described. After dissolution of the irradiated solid target in hydrogen peroxide, Tc-99m was obtained under the chemical form of 99m TcO 4 - , in high radionuclidic and radiochemical purity, by solvent extraction with methyl ethyl ketone (MEK). The extraction process was accomplished inside a glass column-shaped vial especially designed to allow for an easy automation of the whole procedure. Recovery yields were always >90% of the loaded activity. The final pertechnetate saline solution Na 99m TcO 4 , purified using the automated module here described, is within the Pharmacopoeia quality control parameters and is therefore a valid alternative to generator-produced 99m Tc. The resulting automated module is cost-effective and easily replicable for in-house production of high-purity Tc-99m by cyclotrons. Copyright © 2016 Elsevier Ltd. All rights reserved.

Synthesis of high purity monoglycerides from crude glycerol and palm stearin

Directory of Open Access Journals (Sweden)

Pakamas Chetpattananondh

2008-07-01

Full Text Available The optimum conditions for the glycerolysis of palm stearin and crude glycerol derived from biodiesel process werefound to be a reaction temperature of 200oC with a molar ratio of crude glycerol to palm stearin of 2.5:1, and a reaction timeof 20 minutes. The yield and purity of monoglycerides obtained under these conditions was satisfactory as compared withthe glycerolysis of pure glycerol. To increase the purity of monoglycerides a two-step process, removal of residual glyceroland crystallization, was proposed instead of either vacuum or molecular distillation. Residual glycerol was removed byadding hydrochloric acid followed by washing with hot water. Optimum conditions for crystallization were achieved byusing isooctane as a solvent and a turbine impeller speed of 200 rpm at a crystallization temperature of 35oC. A purity notexceeding 99 percent of monoglycerides was obtained with monopalmitin as the major product.

Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates

Energy Technology Data Exchange (ETDEWEB)

Nakata, M.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Jevasuwan, W.; Fukata, N. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

2015-09-28

Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.

Synthesis of high purity rutile nanoparticles from medium-grade Egyptian natural ilmenite

Directory of Open Access Journals (Sweden)

Mohamed G. Shahien

2015-09-01

Full Text Available The Egyptian magmatic ilmenite is classified as a medium-grade ore. The present work is an attempt to produce a high-quality TiO2 that can be used in several industries from this medium-grade raw material using the mechanical activation, carbothermic reduction, hydrochloric acid leaching and calcination. A mixture from the ilmenite (FeTiO3 and activated carbon was milled for 30 h. This mixture was annealed at 1200 °C for one hour and the product was leached by hydrochloric acid and calcined at 600 °C for two hours. The role of the ball milling was to grind the raw ilmenite to obtain the nano size, and the carbothermic reduction was to reduce all the Fe-Ti phases to a mixture from Fe metal and TiO2. Leaching procedure was carried out to remove all the Fe metal and obtain a high-grade TiO2. After leaching and calcination of the milled and annealed mixture of FeTiO3/C under the optimal conditions, TiO2 nanoparticles with a size of 10–100 nm and purity more than 95% were obtained. The qualifications of the synthesized high purity rutile nanoparticles from the Egyptian natural ilmenite match the conditions of many industrial applications.

Large-scale synthesis of high-purity well-aligned carbon nanotubes using pyrolysis of iron(II) phthalocyanine and acetylene

Science.gov (United States)

Liu, B. C.; Lee, T. J.; Lee, S. H.; Park, C. Y.; Lee, C. J.

2003-08-01

Well-aligned carbon nanotubes (CNTs) with high purity have been produced by pyrolysis of iron(II) phthalocyanine and acetylene at 800 °C. The synthesized CNTs have a length of 75 μm and diameters ranging from 20 to 60 nm. The CNTs have a bamboo-like structure and exhibit good crystallinity of graphite sheets. The growth rate of the CNTs was rapidly increased with adding C 2H 2. Our results demonstrate that the proposed growth method is suitable to large-scale synthesis of high-purity well-aligned CNTs on various substrates.

High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

Energy Technology Data Exchange (ETDEWEB)

Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

2010-01-01

In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

High-efficiency Thin-film Fe₂SiS₄ and Fe₂GeS₄-based Solar Cells Prepared from Low-Cost Solution Precursors. Final Report

Energy Technology Data Exchange (ETDEWEB)

Radu, Daniela Rodica [Delaware State Univ., Dover, DE (United States); Univ. of Delaware, Newark, DE (United States); Liu, Mimi [Delaware State Univ., Dover, DE (United States); Hwang, Po-yu [Delaware State Univ., Dover, DE (United States); Berg, Dominik [Rowan Univ., Glassboro, NJ (United States); Dobson, Kevin [Univ. of Delaware, Newark, DE (United States). Inst. of Energy Conversion (IEC)

2017-12-28

The project aimed to provide solar energy education to students from underrepresented groups and to develop a novel, nano-scale approach, in utilizing Fe₂SiS₄ and Fe₂GeS₄ materials as precursors to the absorber layer in photovoltaic thin-film devices. The objectives of the project were as follows: 1. Develop and implement one solar-related course at Delaware State University and train two graduate students in solar research. 2. Fabricate and characterize high-efficiency (larger than 7%) Fe₂SiS₄ and Fe₂GeS₄-based solar devices. The project has been successful in both the educational components, implementing the solar course at DSU as well as in developing multiple routes to prepare the Fe₂GeS₄ with high purity and in large quantities. The project did not meet the efficiency objective, however, a functional solar device was demonstrated.

Effect of initial grain size on dynamic recrystallization in high purity austenitic stainless steels

International Nuclear Information System (INIS)

El Wahabi, M.; Gavard, L.; Montheillet, F.; Cabrera, J.M.; Prado, J.M.

2005-01-01

The influence of initial microstructure on discontinuous dynamic recrystallization (DDRX) has been investigated by using high purity and ultra high purity austenitic stainless steels with various initial grain sizes. After uniaxial compression tests at constant strain rates and various temperatures, the steady state microstructure or the state corresponding to the maximum strain (ε = 1) attained in the test was analyzed by scanning electron microscopy aided with automated electron back scattering diffraction. Recrystallized grain size d rec and twin boundary fraction f TB measurements were carried out. The mechanical behavior was also investigated by comparing experimental stress-strain curves with various initial grain sizes. DDRX kinetics was described by the classical Avrami equation. It was concluded that larger initial grain sizes promoted a delay in the DDRX onset in the two alloys. It was also observed that the softening process progressed faster for smaller initial grain sizes. The effect of initial grain size is larger in the HP material and becomes more pronounced at low temperature

Hysec Process: production of high-purity hydrogen from coke oven gas

Energy Technology Data Exchange (ETDEWEB)

Nishida, S

1984-01-01

An account is given of the development of the Hysec Process by the Kansai Netsukagaku and Mitsubishi Kakoki companies. The process is outlined and its special features noted. The initial development aim was to obtain high-purity hydrogen from coke oven gas by means of PSA. To achieve this, ways had to be found for removing the impurities in the coke oven gas and the trace amounts of oxygen which are found in the product hydrogen. The resulting hydrogen is 99.9999% pure. 3 references.

Continuation of comprehensive quality control of the itG 68Ge/68Ga generator and production of 68Ga-DOTATOC and 68Ga-PSMA-HBED-CC for clinical research studies.

Science.gov (United States)

Amor-Coarasa, Alejandro; Kelly, James M; Gruca, Monika; Nikolopoulou, Anastasia; Vallabhajosula, Shankar; Babich, John W

2017-10-01

Performance of a second itG 68 Ge/ 68 Ga generator system and production of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC were tested over one year as an accompaniment to a previously published study (J Nucl Med. 2016;57:1402-1405). Performance of a 1951MBq 68 Ge/ 68 Ga generator was characterized and the eluate used for preparation of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC. Weekly elution profiles of 68 Ga elution yield and 68 Ge breakthrough were determined. 68 Ga elution yields averaged 82% (61.8-98.4%) and 68 Ge breakthrough averaged 0.002% (0.0007% to 0.004%). The radiochemical purities of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC were determined by HPLC analysis to be >98% and specific activity was 12.6 and 42GBq/μmol, respectively. 68 Ge contamination in the product was under the detection limit (0.00001%). Final sterile, pyrogen-free formulation of 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC in physiologic saline with 5%-7% ethanol was achieved. Performance of a 68 Ge/ 68 Ga generator was studied over one year with satisfactory results. The generator eluate was used to synthesize 68 Ga-DOTATOC and 68 Ga-PSMA-HBED-CC on a routine basis in high purity. Copyright © 2017. Published by Elsevier Inc.

Processing high-Tc superconductors with GeV heavy ions

International Nuclear Information System (INIS)

Marwick, A.D.; Civale, L.; Krusin-Elbaum, L.; Worthington, T.K.; Holtzberg, F.; Thompson, J.R.; Sun, Y.R.; Kerchner, H.R.

1992-01-01

Irradiation of high-T c superconducting crystals with low doses (10 10 --10 11 ions/cm 2 ) of GeV heavy ions (0.58 GeV Sn-116; 1.0-GeV Au-197) produces a unique microstructure consisting of discrete amorphous columns which are only a few nm in diameter but tens of microns long. It has been found recently that this columnar microstructure causes larger increases in magnetization and critical current at high temperature and high magnetic field than other types of defects in these materials. This can be understood as a consequence of the effective pinning of magnetic vortex lines provided by the columnar defects. Measurements confirm that the pinning is strongest when the magnetic field is aligned with the ion tracks. Differences in the pinning in different materials can be related to differences in their anisotropy, which affects the structure of the vortices and their pinning at columnar defects

Characterization of segmented large volume, high purity germanium detectors

International Nuclear Information System (INIS)

Bruyneel, B.

2006-01-01

γ-ray tracking in future HPGe arrays like AGATA will rely on pulse shape analysis (PSA) of multiple γ-interactions. For this purpose, a simple and fast procedure was developed which enabled the first full characterization of a segmented large volume HPGe detector. An analytical model for the hole mobility in a Ge crystal lattice was developed to describe the hole drift anisotropy with experimental velocity values along the crystal axis as parameters. The new model is based on the drifted Maxwellian hole distribution in Ge. It is verified by reproducing successfully experimental longitudinal hole anisotropy data. A comparison between electron and hole mobility shows large differences for the longitudinal and tangential velocity anisotropy as a function of the electrical field orientation. Measurements on a 12 fold segmented, n-type, large volume, irregular shaped HPGe detector were performed in order to determine the parameters of anisotropic mobility for electrons and holes as charge carriers created by γ-ray interactions. To characterize the electron mobility the complete outer detector surface was scanned in small steps employing photopeak interactions at 60 keV. A precise measurement of the hole drift anisotropy was performed with 356 keV rays. The drift velocity anisotropy and crystal geometry cause considerable rise time differences in pulse shapes depending on the position of the spatial charge carrier creation. Pulse shapes of direct and transient signals are reproduced by weighting potential calculations with high precision. The measured angular dependence of rise times is caused by the anisotropic mobility, crystal geometry, changing field strength and space charge effects. Preamplified signals were processed employing digital spectroscopy electronics. Response functions, crosstalk contributions and averaging procedures were taken into account implying novel methods due to the segmentation of the Ge-crystal and the digital electronics. The results are

Characterization of segmented large volume, high purity germanium detectors

Energy Technology Data Exchange (ETDEWEB)

Bruyneel, B. [Koeln Univ. (Germany). Inst. fuer Kernphysik

2006-07-01

{gamma}-ray tracking in future HPGe arrays like AGATA will rely on pulse shape analysis (PSA) of multiple {gamma}-interactions. For this purpose, a simple and fast procedure was developed which enabled the first full characterization of a segmented large volume HPGe detector. An analytical model for the hole mobility in a Ge crystal lattice was developed to describe the hole drift anisotropy with experimental velocity values along the crystal axis as parameters. The new model is based on the drifted Maxwellian hole distribution in Ge. It is verified by reproducing successfully experimental longitudinal hole anisotropy data. A comparison between electron and hole mobility shows large differences for the longitudinal and tangential velocity anisotropy as a function of the electrical field orientation. Measurements on a 12 fold segmented, n-type, large volume, irregular shaped HPGe detector were performed in order to determine the parameters of anisotropic mobility for electrons and holes as charge carriers created by {gamma}-ray interactions. To characterize the electron mobility the complete outer detector surface was scanned in small steps employing photopeak interactions at 60 keV. A precise measurement of the hole drift anisotropy was performed with 356 keV rays. The drift velocity anisotropy and crystal geometry cause considerable rise time differences in pulse shapes depending on the position of the spatial charge carrier creation. Pulse shapes of direct and transient signals are reproduced by weighting potential calculations with high precision. The measured angular dependence of rise times is caused by the anisotropic mobility, crystal geometry, changing field strength and space charge effects. Preamplified signals were processed employing digital spectroscopy electronics. Response functions, crosstalk contributions and averaging procedures were taken into account implying novel methods due to the segmentation of the Ge-crystal and the digital electronics

Physical and mechanical metallurgy of high purity Nb for accelerator cavities

International Nuclear Information System (INIS)

Bieler, T.R.; Wright, N.T.; Pourboghrat, F.; Compton, C.; Hartwig, K.T.; Baars, D.; Zamiri, A.; Chandrasekaran, S.; Darbandi, P.; Jiang, H.; Skoug, E.; Balachandran, S.; Ice, G.E.; Liu, W.

2010-01-01

In the past decade, high Q values have been achieved in high purity Nb superconducting radio frequency (SRF) cavities. Fundamental understanding of the physical metallurgy of Nb that enables these achievements is beginning to reveal what challenges remain to establish reproducible and cost-effective production of high performance SRF cavities. Recent studies of dislocation substructure development and effects of recrystallization arising from welding and heat treatments and their correlations with cavity performance are considered. With better fundamental understanding of the effects of dislocation substructure evolution and recrystallization on electron and phonon conduction, as well as the interior and surface states, it will be possible to design optimal processing paths for cost-effective performance using approaches such as hydroforming, which minimizes or eliminates welds in a cavity.

Fabrication and research of high purity germanium detectors with abrupt and thin diffusion layer

International Nuclear Information System (INIS)

Rodriguez Cabal, A. E.; Diaz Garcia, A.

1997-01-01

A different high purity germanium detector's fabrication method is described. A very thin diffusion film with an abrupt change of the type of conductivity is obtained. The fine diffusion layer thickness makes possibly their utilization in experimental systems in which all the data are elaborated directly on the computer. (author) [es

Influence of irradiation on mechanical properties of Si-Ge alloys

Energy Technology Data Exchange (ETDEWEB)

Sichinava, Avtandil; Bokuchava, Guram; Chubinidze, Giorgi; Archuadze, Giorgi [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Gapishvili, Nodar [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Georgian Technical University, Tbilisi (Georgia)

2017-07-15

Impact of various irradiation (Ar and He ions, high energy electrons) on microhardness and indentation of monocrystalline Si{sub 0,98}Ge{sub 0,02} alloy is studied. Samples of Si and SiGe alloy are obtained by Czochralski (CZ) method in the [111] direction in the atmosphere of high purity Ar. High energy electron irradiation with fluence of ∝10{sup 12} cm{sup -2} is conducted at the Clinac 2100iX. Ar and He ion implantation is performed on modernized ''VEZUVI-3M'' plant. It is shown that for all types of irradiation the microhardness and indentation modulus versus load are characterized by reverse indentation size effect (ISE). With the increase of fluences of Ar and He ions, the maximum value of the effect increases. At high values of loading force impact on the indenter the mechanical characteristics slowly decrease. Impact of isochronous thermal annealing on mechanical properties of high energy electron irradiated samples is studied. Non-monotonic changes of microhardness and indentation modulus are revealed in the temperature range of 200-260 C. It is proposed that such changes are caused by radiation defects transformation. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Crystallographic Analysis of Nucleation at Hardness Indentations in High-Purity Aluminum

DEFF Research Database (Denmark)

Xu, Chaoling; Zhang, Yubin; Lin, Fengxiang

2016-01-01

Nucleation at Vickers hardness indentations has been studied in high-purity aluminum cold-rolled 12 pct. Electron channeling contrast was used to measure the size of the indentations and to detect nuclei, while electron backscattering diffraction was used to determine crystallographic orientations....... It is found that indentations are preferential nucleation sites. The crystallographic orientations of the deformed grains affect the hardness and the nucleation potentials at the indentations. Higher hardness gives increased nucleation probabilities. Orientation relationships between nuclei developed...... they form. Finally, possible nucleation mechanisms are briefly discussed....

Thermal behavior of Ni (99.967% and 99.5% purity) deformed to an ultra-high strain by high pressure torsion

DEFF Research Database (Denmark)

Zhang, H.W.; Huang, Xiaoxu; Pippan, R.

2010-01-01

Polycrystalline Ni of two purities (99.967% (4N) and 99.5% (2N)) was deformed to an ultra-high strain of εvM = 100 (εvM, von Mises strain) by high pressure torsion at room temperature. The 4N and 2N samples at this strain are nanostructured with an average boundary spacing of 100 nm, a high density...

Magnetic properties and low-temperature large magnetocaloric effect in the antiferromagnetic HoCu{sub 0.33}Ge{sub 2} and ErCu{sub 0.25}Ge{sub 2} compounds

Energy Technology Data Exchange (ETDEWEB)

Gao, R.L. [School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China); Xu, Z.Y., E-mail: zhyxu@nim.ac.cn [National Institute of Metrology, Beijing 100029 (China); Wang, L.C. [State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Dong, Q.Y.; Zhang, Y. [Department of Physics, Capital Normal University, Beijing 100048 (China); Liu, F.H. [National Space Science Center, Beijing 100190 (China); Mo, Z.J. [School of material Science and Engineering, Hebei University of Technology, Tianjin 300401 (China); Niu, E. [State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Fu, C.L.; Cai, W.; Chen, G.; Deng, X.L. [School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China)

2015-05-15

Highlights: • Antiferromagnetic material RCu{sub x}Ge{sub 2} of high purity was prepared. • Large MCE as −10.2 J/kg K and −10.5 J/kg K for RCu{sub x}Ge{sub 2} (Ho, Er) was obtained for field change of 0–50 kOe. • The RCu{sub x}Ge{sub 2} compounds with variable x had different transition temperature which made them suitable for ‘table-like’ magnetocaloric refrigerant. - Abstract: Magnetic properties and magnetocaloric effect (MCE) of HoCu{sub 0.33}Ge{sub 2} and ErCu{sub 0.25}Ge{sub 2} compounds have been investigated. The compounds were determined to be antiferromagnetic with the Néel temperatures T{sub N} = 9 K and 3.9 K, respectively. The critical transition magnetic fields for the metamagnetic transition from antiferromagnetic to ferromagnetic state below T{sub N} were determined to be 10 kOe for HoCu{sub 0.33}Ge{sub 2} at 5 K and 6 kOe for ErCu{sub 0.25}Ge{sub 2} at 2 K. Large MCE with the maximal values of magnetic entropy changes (ΔS{sub M}) as −10.2 J/kg K at 10.5 K were found in HoCu{sub 0.33}Ge{sub 2} for field changes of 0–70 kOe and −10.5 J/kg K at 5.5 K in ErCu{sub 0.25}Ge{sub 2} for field changes of 0–50 kOe, respectively. The large ΔS{sub M} around T{sub N} as well as no hysteresis loss made RCu{sub x}Ge{sub 2} competitive candidates as low temperature magnetic refrigerant.

A Study of the Surface Quality of High Purity Copper after Heat Treatment

CERN Document Server

Aicheler, M; Atieh, S; Calatroni, S; Riddone, G; Lebet, S; Samoshkin, A

2011-01-01

Themanufacturing flow of accelerating structures for the compact linear collider, based on diamond-machined high purity copper components, include several thermal cycles (diffusion bonding, brazing of cooling circuits, baking in vacuum, etc.). The high temperature cycles may be carried out following different schedules and environments (vacuum, reducing hydrogen atmosphere, argon, etc.) and develop peculiar surface topographies which have been the object of extended observations. This study presents and discusses the results of scanning electron microscopy (SEM) and optical microscopy investigations.

Low-temperature internal friction in high-purity monocrystalline and impure polycrystalline niobium after plastic deformation

International Nuclear Information System (INIS)

Wasserbaech, W.; Thompson, E.

2001-01-01

The internal friction Q -1 of plastically deformed, high-purity monocrystalline and impure polycrystalline niobium specimens was measured in the temperature range between 65 mK and about 2 K. Plastic deformation has a pronounced effect on the internal friction Q -1 of the high-purity monocrystalline specimens, and the effect has been found to be almost temperature independent. By contrast, surprisingly, the internal friction Q -1 of the impure polycrystalline specimens was found to be almost independent of the extent of plastic deformation. Comparison of the experimental results with different models of a dynamic scattering of acoustic phonons by dislocations leads to the conclusion that the results cannot be explained with the two-level tunneling model. Instead it is suggested that a strong interaction between acoustic phonons and geometrical kinks in non-screw dislocations is responsible for the observed internal friction Q -1 . (orig.)

Ge/SiGe superlattices for nanostructured thermoelectric modules

International Nuclear Information System (INIS)

Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

2013-01-01

Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

Disgust and the moralization of purity.

Science.gov (United States)

Horberg, E J; Oveis, Christopher; Keltner, Dacher; Cohen, Adam B

2009-12-01

Guided by appraisal-based models of the influence of emotion upon judgment, we propose that disgust moralizes--that is, amplifies the moral significance of--protecting the purity of the body and soul. Three studies documented that state and trait disgust, but not other negative emotions, moralize the purity moral domain but not the moral domains of justice or harm/care. In Study 1, integral feelings of disgust, but not integral anger, predicted stronger moral condemnation of behaviors violating purity. In Study 2, experimentally induced disgust, compared with induced sadness, increased condemnation of behaviors violating purity and increased approval of behaviors upholding purity. In Study 3, trait disgust, but not trait anger or trait fear, predicted stronger condemnation of purity violations and greater approval of behaviors upholding purity. We found that, confirming the domain specificity of the disgust-purity association, disgust was unrelated to moral judgments about justice (Studies 1 and 2) or harm/care (Study 3). Finally, across studies, individuals of lower socioeconomic status (SES) were more likely than individuals of higher SES to moralize purity but not justice or harm/care.

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

Science.gov (United States)

Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

2018-05-01

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

Potential utility of eGFP-expressing NOG mice (NOG-EGFP as a high purity cancer sampling system

Directory of Open Access Journals (Sweden)

Shima Kentaro

2012-06-01

Full Text Available Abstract Purpose It is still technically difficult to collect high purity cancer cells from tumor tissues, which contain noncancerous cells. We hypothesized that xenograft models of NOG mice expressing enhanced green fluorescent protein (eGFP, referred to as NOG-EGFP mice, may be useful for obtaining such high purity cancer cells for detailed molecular and cellular analyses. Methods Pancreato-biliary cancer cell lines were implanted subcutaneously to compare the tumorigenicity between NOG-EGFP mice and nonobese diabetic/severe combined immunodeficiency (NOD/SCID mice. To obtain high purity cancer cells, the subcutaneous tumors were harvested from the mice and enzymatically dissociated into single-cell suspensions. Then, the cells were sorted by fluorescence-activated cell sorting (FACS for separation of the host cells and the cancer cells. Thereafter, the contamination rate of host cells in collected cancer cells was quantified by using FACS analysis. The viability of cancer cells after FACS sorting was evaluated by cell culture and subsequent subcutaneous reimplantation in NOG-EGFP mice. Results The tumorigenicity of NOG-EGFP mice was significantly better than that of NOD/SCID mice in all of the analyzed cell lines (p  Conclusions This method provides a novel cancer sampling system for molecular and cellular analysis with high accuracy and should contribute to the development of personalized medicine.

High-Purity Semiconducting Single-Walled Carbon Nanotubes: A Key Enabling Material in Emerging Electronics.

Science.gov (United States)

Lefebvre, Jacques; Ding, Jianfu; Li, Zhao; Finnie, Paul; Lopinski, Gregory; Malenfant, Patrick R L

2017-10-17

Semiconducting single-walled carbon nanotubes (sc-SWCNTs) are emerging as a promising material for high-performance, high-density devices as well as low-cost, large-area macroelectronics produced via additive manufacturing methods such as roll-to-roll printing. Proof-of-concept demonstrations have indicated the potential of sc-SWCNTs for digital electronics, radiofrequency circuits, radiation hard memory, improved sensors, and flexible, stretchable, conformable electronics. Advances toward commercial applications bring numerous opportunities in SWCNT materials development and characterization as well as fabrication processes and printing technologies. Commercialization in electronics will require large quantities of sc-SWCNTs, and the challenge for materials science is the development of scalable synthesis, purification, and enrichment methods. While a few synthesis routes have shown promising results in making near-monochiral SWCNTs, gram quantities are available only for small-diameter sc-SWCNTs, which underperform in transistors. Most synthesis routes yield mixtures of SWCNTs, typically 30% metallic and 70% semiconducting, necessitating the extraction of sc-SWCNTs from their metallic counterparts in high purity using scalable postsynthetic methods. Numerous routes to obtain high-purity sc-SWCNTs from raw soot have been developed, including density-gradient ultracentrifugation, chromatography, aqueous two-phase extraction, and selective DNA or polymer wrapping. By these methods (termed sorting or enrichment), >99% sc-SWCNT content can be achieved. Currently, all of these approaches have drawbacks and limitations with respect to electronics applications, such as excessive dilution, expensive consumables, and high ionic impurity content. Excess amount of dispersant is a common challenge that hinders direct inclusion of sc-SWCNTs into electronic devices. At present, conjugated polymer extraction may represent the most practical route to sc-SWCNTs. By the use of

Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

Science.gov (United States)

Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

2008-07-01

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

NARCIS (Netherlands)

Mackus, A.J.M.; Mulders, J.J.L.; Sanden, van de M.C.M.; Kessels, W.M.M.

2010-01-01

An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure,

Reduction of 68Ge activity containing liquid waste from 68Ga PET chemistry in nuclear medicine and radiopharmacy by solidification

NARCIS (Netherlands)

E. de Blois (Erik); H.S. Chan (Ho Sze); K. Roy (Kamalika); E.P. Krenning (Eric); W.A.P. Breeman (Wouter)

2011-01-01

textabstractPET with68Ga from the TiO2- or SnO2- based68Ge/68Ga generators is of increasing interest for PET imaging in nuclear medicine. In general, radionuclidic purity (68Ge vs.68Ga activity) of the eluate of these generators varies between 0.01 and 0.001%. Liquid waste containing low amounts

Physical and mechanical metallurgy of high purity Nb for accelerator cavities

Directory of Open Access Journals (Sweden)

T. R. Bieler

2010-03-01

Full Text Available In the past decade, high Q values have been achieved in high purity Nb superconducting radio frequency (SRF cavities. Fundamental understanding of the physical metallurgy of Nb that enables these achievements is beginning to reveal what challenges remain to establish reproducible and cost-effective production of high performance SRF cavities. Recent studies of dislocation substructure development and effects of recrystallization arising from welding and heat treatments and their correlations with cavity performance are considered. With better fundamental understanding of the effects of dislocation substructure evolution and recrystallization on electron and phonon conduction, as well as the interior and surface states, it will be possible to design optimal processing paths for cost-effective performance using approaches such as hydroforming, which minimizes or eliminates welds in a cavity.

Measurements of gamma (γ)-emitting radionuclides with a high-purity germanium detector: the methods and reliability of our environmental assessments on the Fukushima 1 Nuclear Power Plant accident.

Science.gov (United States)

Mimura, Tetsuro; Mimura, Mari; Komiyama, Chiyo; Miyamoto, Masaaki; Kitamura, Akira

2014-01-01

The severe accident of Fukushima 1 Nuclear Power Plant due to the Tohoku Region Pacific Coast Earthquake in 11 March 2011 caused wide contamination and pollution by radionuclides in Fukushima and surrounding prefectures. In the current JPR symposium, a group of plant scientists attempted to examine the impact of the radioactive contamination on wild and cultivated plants. Measurements of gamma (γ) radiation from radionuclides in "Fukushima samples", which we called and collected from natural and agricultural areas in Fukushima prefecture were mostly done with a high-purity Ge detector in the Graduate School of Maritime Sciences, Kobe University. In this technical note, we describe the methods of sample preparation and measurements of radioactivity of the samples and discuss the reliability of our data in regards to the International Atomic Energy Agency (IAEA) Interlaboratory comparisons and proficiency test (IAEA proficiency test).

Surface segregation of Ge during Si growth on Ge/Si(0 0 1) at low temperature observed by high-resolution RBS

International Nuclear Information System (INIS)

Nakajima, K.; Hosaka, N.; Hattori, T.; Kimura, K.

2002-01-01

The Si/Ge/Si(0 0 1) multilayer with about 1 ML Ge layer is fabricated by evaporating Si overlayer on a Ge/Si(0 0 1) surface at 20-300 deg. C. The depth profile of the Ge atoms is observed by high-resolution Rutherford backscattering spectroscopy to investigate the possibility of Ge delta doping in Si. The observed profile of the Ge atoms spreads over several atomic layers even at 20 deg. C and a significant amount of Ge is located in the surface layer at higher temperatures. The results at 20-150 deg. C are well explained with two-layer model for surface segregation of the Ge atoms and the segregation rates are estimated. The activation energy for surface segregation of Ge atoms in amorphous Si is evaluated to be 0.035 eV, which is much smaller than the value reported for Si deposition at 500 deg. C. The small activation energy suggests that local heating during the Si deposition is dominant at low temperature

Effect of microplastic deformation on the electron ultrasonic absorption in high-purity molybdenum monocrystals

International Nuclear Information System (INIS)

Pal'-Val', P.P.; Kaufmann, Kh.-J.

1983-01-01

The low temperature (100-6 K) linear absorption of ultrasound (88 kHz) by high purity molybdenum single crystals have been studied. Both unstrained samples and samples sub ected to microplastic deformation (epsilon 0 approximately 10 -4 , during 10 min, at 6 K. A new relaxation peak of absorption at 10 K has been found in strained samples

Precipitation of hydrides in high purity niobium after different treatments

Energy Technology Data Exchange (ETDEWEB)

Barkov, F.; Romanenko, A.; Trenikhina, Y.; Grassellino, A.

2013-01-01

Precipitation of lossy non-superconducting niobium hydrides represents a known problem for high purity niobium in superconducting applications. Using cryogenic optical and laser confocal scanning microscopy we have directly observed surface precipitation and evolution of niobium hydrides in samples after different treatments used for superconducting RF cavities for particle acceleration. Precipitation is shown to occur throughout the sample volume, and the growth of hydrides is well described by the fast diffusion-controlled process in which almost all hydrogen is precipitated at $T=140$~K within $\\sim30$~min. 120$^{\\circ}$C baking and mechanical deformation are found to affect hydride precipitation through their influence on the number of nucleation and trapping centers.

Structure, composition, morphology, photoluminescence and cathodoluminescence properties of ZnGeN{sub 2} and ZnGeN{sub 2}:Mn{sup 2+} for field emission displays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Q.-H. [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Guangzhou Research Institute of Non-ferrous Metals, Guangzhou, Guangdong 510651 (China); Wang, J., E-mail: ceswj@mail.sysu.edu.cn [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Yeh, C.-W.; Ke, W.-C.; Liu, R.-S. [Department of Chemistry, National Taiwan University, Taipei 106, Taiwan (China); Tang, J.-K. [Department of Physics and Astronomy, University of Wyoming, Laramie, WY 82071 (United States); Xie, M.-B.; Liang, H.-B.; Su, Q. [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China)

2010-12-15

Yellowish-orange-emitting ZnGeN{sub 2} and orange-red-emitting ZnGeN{sub 2}:Mn were synthesized by a facile and mild gas-reduction-nitridation reaction at 1153 K under NH{sub 3} flow with air-stable raw materials ZnO, GeO{sub 2} and MnCO{sub 3}. The structure, composition, morphology, photoluminescence and cathodoluminescence properties of ZnGeN{sub 2} doped with or without Mn{sup 2+} were systematically investigated. Rietveld refinements show that the as-synthesized samples are obtained as single-phase compounds and crystallize as an orthorhombic structure with a space group of Pna2{sub 1}. The actual chemical composition of the as-prepared ZnGeN{sub 2} determined by energy dispersive X-ray spectroscopy suggests that the Ge vacancy defects probably exist in the host. The SEM image reveals that the Zn{sub 0.99}Mn{sub 0.01}GeN{sub 2} particles form aggregates {approx}500-600 nm in size. The diffuse reflection spectrum and photoluminescence excitation spectrum confirm that the band edge absorption of ZnGeN{sub 2} at low energy is 3.3 eV ({approx}376 nm). Upon UV light excitation and electron beam excitation, ZnGeN{sub 2} gives an intense yellowish-orange emission around 580-600 nm, associated with a deep defect level due to the Ge vacancy defects, and ZnGeN{sub 2}:Mn shows an intense red emission at 610 nm due to the {sup 4}T{sub 1g}({sup 4}G) {yields} 6A{sub 1g}({sup 6}S) of Mn{sup 2+}. The unusual red emission of Mn{sup 2+} in tetrahedral Zn{sup 2+} sites is attributed to the strong nephelauxetic effect between Mn{sup 2+} and the surrounding tetrahedrally coordinated nitrogen. The photoluminescence and cathodoluminescence emission colors of ZnGeN{sub 2}:Mn have a high color purity of {approx}93-98%. These results demonstrate that ZnGeN{sub 2}:Mn is a novel, promising red-emitting nitride, potentially applicable to field emission displays with brilliant color-rendering properties and a large color gamut.

Surface passivation of high-purity germanium gamma-ray detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.; Edmondson, M.; Lawson, E.M.

1993-01-01

The experimental work consists of two parts. The first involves fabrication of hyper-pure germanium gamma ray detectors using standard surface treatment, chemical etchings and containment in a suitable cryostat. Then, after cooling the detectors to 77 K, γ-ray emissions from radioisotopes are resolved, resolution, depletion depth, V R versus I R characteristics and /N A -N D / of the germanium are measured. The second part of the work involves investigation of surface states in an effort to achieve long-term stability of operating characteristics. Several methods are used: plasma hydrogenation, a-Si and a-Ge pinch-off effect and simple oxidation. A-Ge and a-Si thicknesses were measured using Rutherford backscattering techniques; surface states were measured with deep level transient spectroscopy and diode reverse current versus reverse voltage plots. Some scanning electron microscope measurements were used in determining major film contaminants during backscattering of a-Si and a-Ge films. Surface passivation studies revealed unexpected hole trapping defects generated when a-Ge:H film is applied. The a-Si:H films were found to be mechanically strong, no defect traps were found and preliminary results suggest that such films will be good passivants. 14 refs., 2 tabs., 7 figs., 13 ills

Variation of low temperature internal friction of microplastic deformation of high purity molybdenum single crystals

International Nuclear Information System (INIS)

Pal-Val, P.P.; Kaufmann, H.J.

1984-01-01

Amplitude and temperature spectra of ultrasound absorption in weakly deformed high purity molybdenum single crystals of different orientations were measured. The results were discussed in terms of parameter changes related to quasiparticle or dislocation oscillations, respectively, dislocation point defect interactions as well as defect generation at microplastic deformation. (author)

Variation of low temperature internal friction of microplastic deformation of high purity molybdenum single crystals

Energy Technology Data Exchange (ETDEWEB)

Pal-Val, P.P. (AN Ukrainskoj SSR, Kharkov. Fiziko-Tekhnicheskij Inst. Nizkikh Temperatur); Kaufmann, H.J. (Akademie der Wissenschaften der DDR, Berlin)

1984-08-01

Amplitude and temperature spectra of ultrasound absorption in weakly deformed high purity molybdenum single crystals of different orientations were measured. The results were discussed in terms of parameter changes related to quasiparticle or dislocation oscillations, respectively, dislocation point defect interactions as well as defect generation at microplastic deformation.

Strengthening Purity: Moral Purity as a Mediator of Direct and Extended Cross-Group Friendships on Sexual Prejudice.

Science.gov (United States)

Vezzali, Loris; Brambilla, Marco; Giovannini, Dino; Paolo Colucci, Francesco

2017-01-01

The present research investigated whether enhanced perceptions of moral purity drive the effects of intergroup cross-group friendships on the intentions to interact with homosexuals. High-school students (N = 639) reported their direct and extended cross-group friendships with homosexuals as well as their beliefs regarding the moral character of the sexual minority. Participants further reported their desire to interact with homosexuals in the future. Results showed that both face-to-face encounters and extended contact with homosexuals increased their perceived moral purity, which in turn fostered more positive behavioral intentions. Results further revealed the specific role of moral purity in this sense, as differential perceptions along other moral domains (autonomy and community) had no mediation effects on behavioral tendencies toward homosexuals. The importance of these findings for improving intergroup relations is discussed, together with the importance of integrating research on intergroup contact and morality.

Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

Directory of Open Access Journals (Sweden)

Chad A. Stephenson

2016-12-01

Full Text Available Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx offers a particularly interesting prospect. By using a precursor gas with a Ge4C core, C can be preferentially incorporated in substitutional sites, suppressing interstitial and C cluster defects. We present a method of reproducible and upscalable gas synthesis of tetrakis(germylmethane, or (H3Ge4C, followed by the design of a hybrid gas/solid-source molecular beam epitaxy system and subsequent growth of defect-free Ge1−xCx by molecular beam epitaxy (MBE. Secondary ion mass spectroscopy, transmission electron microscopy and contactless electroreflectance confirm the presence of carbon with very high crystal quality resulting in a decrease in the direct bandgap energy. This technique has broad applicability to growth of highly mismatched alloys by MBE.

Electron beam welding of high-purity copper accelerator cells

International Nuclear Information System (INIS)

Delis, K.; Haas, H.; Schlebusch, P.; Sigismund, E.

1986-01-01

The operating conditions of accelerator cells require high thermal conductivity, low gas release in the ultrahigh vacuum, low content of low-melting metals and an extremely good surface quality. In order to meet these requirements, high-purity copper (OFHC, Grade 1, according to ASTM B 170-82 and extra specifications) is used as structural material. The prefabricated components of the accelerator cells (noses, jackets, flanges) are joined by electron beam welding, the weld seam being assessed on the basis of the same criteria as the base material. The welding procedures required depend, first, on the material and, secondly, on the geometries involved. Therefore experimental welds were made first on standardized specimens in order to study the behaviour of the material during electron beam welding and the influence of parameter variations. The welded joints of the cell design were planned on the basis of these results. Seam configuration, welding procedures and the parameters were optimized on components of original geometry. The experiments have shown that high-quality joints of this grade of copper can be produced by the electron beam welding process, if careful planning and preparation of the seams and adequate containment of the welding pool are assured. (orig.)

Facile synthesis of upconversion nanoparticles with high purity using lanthanide oleate compounds

Science.gov (United States)

Kang, Ning; Ai, Chao-Chao; Zhou, Ya-Ming; Wang, Zuo; Ren, Lei

2018-02-01

A novel strategy for preparing highly pure NaYF4-based upconversion nanoparticles (UCNPs) was developed using lanthanide oleate compounds [Ln(OA)3] as the precursor, denoted as the Ln-OA preparation method. Compared to the conventional solvothermal method for synthesizing UCNPs using lanthanide chloride compounds (LnCl3) as the precursor (denoted as the Ln-Cl method), the Ln-OA strategy exhibited the merits of high purity, reduced purification process and a uniform size in preparing core and core-shell UCNPs excited by a 980 or 808 nm near infrared (NIR) laser. This work sheds new insight on the preparation of UCNPs and promotes their application in biomedical fields.

Se-Se isoelectronic centers in high purity CdTe

Energy Technology Data Exchange (ETDEWEB)

Najjar, Rita; Andre, Regis; Mariette, Henri [CEA-CNRS, Nanophysique et Semiconducteurs, Institut Neel, 25 rue des martyrs, 38042 Grenoble (France); Golnik, Andrzej; Kossacki, Piotr; Gaj, Jan A. [Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw (Poland)

2010-06-15

We evidence zero-dimensional exciton states trapped on isoelectronic Se centers in CdTe quantum wells, {delta}-doped with Se. Thanks to special precautions taken to have very high purity CdTe heterostructures, it is possible to observe, in photoluminescence spectra, sharp discrete lines arising from individual centers related to the Se doping. These emission lines appear at about 40 meV below the CdTe band gap energy. The most prominent lines are attributed to the recombination of excitons bound to nearest-neighbor selenium pairs in a tetrahedral CdTe environment. This assignment is confirmed by a common linear polarization direction of the emitted light, parallel to <110>. These excitons localized on individual isoelectronic traps are good candidates as single photon emitters (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Surface preparation for high purity alumina ceramics enabling direct brazing in hydrogen atmospheres

Science.gov (United States)

Cadden, Charles H.; Yang, Nancy Yuan Chi; Hosking, Floyd M.

2001-01-01

The present invention relates to a method for preparing the surface of a high purity alumina ceramic or sapphire specimen that enables direct brazing in a hydrogen atmosphere using an active braze alloy. The present invention also relates to a method for directly brazing a high purity alumina ceramic or sapphire specimen to a ceramic or metal member using this method of surface preparation, and to articles produced by this brazing method. The presence of silicon, in the form of a SiO.sub.2 -containing surface layer, can more than double the tensile bond strength in alumina ceramic joints brazed in a hydrogen atmosphere using an active Au-16Ni-0.75 Mo-1.75V filler metal. A thin silicon coating applied by PVD processing can, after air firing, produce a semi-continuous coverage of the alumina surface with a SiO.sub.2 film. Room temperature tensile strength was found to be proportional to the fraction of air fired surface covered by silicon-containing films. Similarly, the ratio of substrate fracture versus interface separation was also related to the amount of surface silicon present prior to brazing. This process can replace the need to perform a "moly-manganese" metallization step.

Operation of a high-purity silicon diode alpha particle detector at 1.4 K

International Nuclear Information System (INIS)

Martoff, C.J.; Kaczanowicz, E.; Neuhauser, B.J.; Lopez, E.; Zhang, Y.; Ziemba, F.P.

1991-01-01

Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm 2 by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.)

Operation of a high-purity silicon diode alpha particle detector at 1. 4 K

Energy Technology Data Exchange (ETDEWEB)

Martoff, C.J.; Kaczanowicz, E. (Temple Univ., Philadelphia, PA (USA)); Neuhauser, B.J.; Lopez, E.; Zhang, Y. (San Francisco State Univ., CA (USA)); Ziemba, F.P. (Quantrad Corp. (USA))

1991-03-01

Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm{sup 2} by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.).

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

Science.gov (United States)

Shklyaev, A A; Latyshev, A V

2016-12-01

We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

Contribution to the study of the conductivity of high purity water

International Nuclear Information System (INIS)

Nens, Ch.

1964-01-01

In this work a study is made more particularly of two points: the production of high purity water and the estimation of this purity by means of conductivity measurements. As far as water purification is concerned it is observed that the de-ionisation produced by ion exchange resins in mixed beds leads to a water having a lower conductivity than that obtained by distillation. This low conductivity however, measured at the column exit before the water comes into contact with air is not stable. In fact the carbon dioxide in the water gives rise to an equilibrium with production of the ions HCO 3 - , CO 3 -- . These ions are retained during the passage of the water through the resins. They reappear again at the column exit as a result of the displacement of the hydration equilibrium of CO 2 ; because of this the conductivity of the water increases with time. The water obtained by successive distillations does not behave in the same way because no carbon dioxide is present. Distillation is however a costly purification process on an industrial scale, especially if large quantities of water have to be treated. The measurement of these low conductivities is very delicate. The method employed makes use of a direct current and gives reproducible results if care is taken to exclude interfering electric fields by screening the apparatus. (author) [fr

Streamer knotwilg branching: sudden transition in morphology of positive streamers in high-purity nitrogen

International Nuclear Information System (INIS)

Heijmans, L C J; Clevis, T T J; Nijdam, S; Van Veldhuizen, E M; Ebert, U

2015-01-01

We describe a peculiar branching phenomenon in positive repetitive streamer discharges in high purity nitrogen. We name it knotwilg branching after the Dutch word for a pollard willow tree. In a knotwilg branching a thick streamer suddenly splits into many thin streamers. Under some conditions this happens for all streamers in a discharge at about the same distance from the high-voltage electrode tip. At this distance, the thick streamers suddenly bend sharply and appear to propagate over a virtual surface surrounding the high-voltage electrode, rather than following the background electric field lines. From these bent thick streamers many, much thinner, streamers emerge that roughly follow the background electric field lines, creating the characteristic knotwilg branching. We have only found this particular morphology in high purity nitrogen at pressures in the range 50 to 200 mbar and for pulse repetition rates above 1 Hz; the experiments were performed for an electrode distance of 16 cm and for fast voltage pulses of 20 or 30 kV. These observations clearly disagree with common knowledge on streamer propagation. We have analyzed the data of several tens of thousands of discharges to clarify the phenomena. We also present some thoughts on how the ionization of the previous discharges could concentrate into some pre-ionization region near the needle electrode and create the knotwilg morphology, but we present no final explanation. (paper)

Gas purity analytics, calibration studies, and background predictions towards the first results of XENON1T

Energy Technology Data Exchange (ETDEWEB)

Hasterok, Constanze

2017-10-25

The XENON1T experiment aims at the direct detection of the well motivated dark matter candidate of weakly interacting massive particles (WIMPs) scattering off xenon nuclei. The first science run of 34.2 live days has already achieved the most stringent upper limit on spin-independent WIMP-nucleon cross-sections above masses of 10 GeV with a minimum of 7.7.10{sup -47} cm{sup 2} at a mass of 35 GeV. Crucial for this unprecedented sensitivity are a high xenon gas purity and a good understanding of the background. In this work, a procedure is described that was developed to measure the purity of the experiment's xenon inventory of more than three tons during its initial transfer to the detector gas system. The technique of gas chromatography has been employed to analyze the noble gas for impurities with the focus on oxygen and krypton contaminations. Furthermore, studies on the calibration of the experiment's dominating background induced by natural gamma and beta radiation were performed. Hereby, the novel sources of radioactive isotopes that can be dissolved in the xenon were employed, namely {sup 220}Rn and tritium. The sources were analyzed in terms of a potential impact on the outcome of a dark matter search. As a result of the promising findings for {sup 220}Rn, the source was successfully deployed in the first science run of XENON1T. The first WIMP search of XENON1T is outlined in this thesis, in which a background component from interactions taking place in close proximity to the detector wall is identified, investigated and modeled. A background prediction was derived that was incorporated into the background model of the WIMP search which was found to be in good agreement with the observation.

High purity hydrogen production system by the PSA method

Energy Technology Data Exchange (ETDEWEB)

1986-01-01

In a process developed by Nippon Steel, coke oven gas is compressed and purified of tarry matter, sulphur compounds and gum-formers by adsorption. It is then passed through a three-tower pressure-swing adsorption system to recover hydrogen whose purity can be selected in the range 99 to 99.999%. A composite adsorption agent is used.

Development of Au-Ge based candidate alloys as an alternative to high-lead content solders

DEFF Research Database (Denmark)

Chidambaram, Vivek; Hald, John; Hattel, Jesper Henri

2010-01-01

Au-Ge based candidate alloys have been proposed as an alternative to high-lead content solders that are currently being used for high-temperature applications. The changes in microstructure and microhardness associated with the addition of low melting point metals namely In, Sb and Sn to the Au......-Ge-In and Au-Ge-Sn combinations was determined to be the classic solid solution strengthening. The Au-Ge-Sb combination was primarily strengthened by the refined (Ge) dispersed phase. The aging temperature had a significant influence on the microhardness in the case of the Au-Ge-Sn candidate alloy...

Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

Science.gov (United States)

Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

2017-10-30

We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

Energy Technology Data Exchange (ETDEWEB)

Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

2014-06-30

The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325 °C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200 μm in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

A fundamental self-generated quenching center for lanthanide-doped high-purity solids

International Nuclear Information System (INIS)

Auzel, F.

2002-01-01

An intrinsic self-generated quenching center for lanthanide-doped high-purity solids is presented for transitions, which cannot be quenched by cross-relaxation. This center, in fact a cluster-like pair of active centers, is shown to come from a particular multiphonon-assisted energy transfer between them. Being due to the vibronic properties of the host it cannot be suppressed. Its role in lanthanide first excited states self-quenching is analyzed and a simple mathematical expression is derived. This law is compared with experimental results for self-quenching in Er-doped fluorophosphate glasses

Measurement of oxide-layer thickness of internal granules in high-purity aluminium

International Nuclear Information System (INIS)

Takacs, S.; Ditroi, F.; Mahunka, I.

1989-01-01

Charged-particle activation analysis was used for the determination of bulk oxygen concentration in aluminium. High-purity aluminium samples and mixtures containing different amounts of alumina were irradiated by 13 MeV 3 He particles. The aim of the investigation was to determine the oxide-layer thickness on the surface of internal aluminium granules. The measurement was carried out by determining the bulk oxygen concentration in the samples, and calculating the oxide-layer thickness, by using model conditions about the microstructure of the aluminium samples. (author) 5 refs

High spin spectroscopy of 70Ge

International Nuclear Information System (INIS)

Kumar Raju, M.; Sugathan, P.; Seshi Reddy, T.; Thirumala Rao, B.V.; Madhusudhana Rao, P.V.; Muralithar, S.; Singh, R.P.; Bhowmik, R.K.

2011-01-01

Structure of nuclei in mass 70 region is of interest due to presence of a variety of complex phenomenon. In these nuclei rapid change of nuclear shape with proton and neutron numbers, spin and excitation energy. Valance nucleons in f-p-g shell configuration will drive the nuclei towards high deformations. Relatively large values of quadrupole deformation are evident in the even-even nuclei in this region. Present study is aimed to explore the high spin structure of the 70 Ge nucleus. A negative parity structure was reported in an earlier study

Obtaining high purity silica from rice hulls

Directory of Open Access Journals (Sweden)

José da Silva Júnior

2010-01-01

Full Text Available Many routes for extracting silica from rice hulls are based on direct calcining. These methods, though, often produce silica contaminated with inorganic impurities. This work presents the study of a strategy for obtaining silica from rice hulls with a purity level adequate for applications in electronics. The technique is based on two leaching steps, using respectively aqua regia and Piranha solutions, which extract the organic matrix and inorganic impurities. The material was characterized by Fourier-transform infrared spectroscopy (FTIR, powder x-ray diffraction (XRD, x-ray fluorescence (XRF, scanning electron microscopy (SEM, particle size analysis by laser diffraction (LPSA and thermal analysis.

Neutron activation determination of impurities in high-purity bismuth with separation of matrix in form of hydroxide

International Nuclear Information System (INIS)

Artyukhin, P.I.; Shavinskij, B.M.; Mityakin, Yu.L.

1979-01-01

The technique of neutron activation determination of 15 impurity elements (Au, Ag, Ba, Cd, Co, Cs, Cu, Hg, K, Na, Ni, Se, Sr, Te, Zn) in high-purity bismuth (impurity content is approximately 10 -6 -10 -10 %) is presented. Bismuth hydroxide precipitation by ammonia from nitric acid solutions was used to separate bismuth from alkali, alkaline earth metals and elements forming stable ammines. Gold, selenium and tellurium are isolated in the form of metals at reduction by muriatic hydrazine. Results of analyzing two samples of special purity bismuth are presented. Neutron flux comprised 0.8-1x10 13 n/cm 2 xs. Radiation time was equal to 90 hours

High-pressure structural behavior of nanocrystalline Ge

DEFF Research Database (Denmark)

Wang, H.; Liu, J. F.; Yan, H.

2007-01-01

The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transi...

The element analysis of high purity beryllium by method of laser mass-spectrometry

International Nuclear Information System (INIS)

Virich, V.D.; Kisel', O.V.; Kovtun, K.V.; Pugachev, N.S.; Yakobson, L.A.

2003-01-01

The operation is devoted to examination of a possibility of the analysis of element composition pure and high purity model of a beryllium is model by a method of laser mass spectrometry. The advantages of a method in a part of finding of a small amount of admixtures in comparison with other modes of the analysis are exhibited. The possibility of quantitative definition of a content in beryllium samples of gas-making admixtures-C,N,O surveyed

Perfomance of a high purity germanium multi-detector telescope for long range particles

International Nuclear Information System (INIS)

Riepe, G.; Protic, D.; Suekoesd, C.; Didelez, J.P.; Frascaria, N.; Gerlic, E.; Hourani, E.; Morlet, M.

1980-01-01

A telescope of stacked high purity germanium detectors designed for long range charged particles was tested using medium energy protons. Particle identification and the rejection of the low energy tail could be accomplished on-line allowing the measurement of complex spectra. The efficiency of the detector stack for protons was measured up to 156 MeV incoming energy. The various factors affecting the energy resolution are discussed and their estimated contributions are compared with the experimental results

Production of High Value Fluorine Gases for the Semiconductor Industry

Energy Technology Data Exchange (ETDEWEB)

Bulko, J. B.

2003-10-23

The chemistry to manufacture high purity GeF{sub 4} and WF{sub 6} for use in the semiconductor industry using Starmet's new fluorine extraction technology has been developed. Production of GeF{sub 4} was established using a tube-style reactor system where conversion yields as high as 98.1% were attained for the reaction between and GeO{sub 2}. Collection of the fluoride gas improved to 97.7% when the reactor sweep gas contained a small fraction of dry air (10-12 vol%) along with helium. The lab-synthesized product was shown to contain the least amount of infrared active and elemental impurities when compared with a reference material certified at 99.99% purity. Analysis of the ''as-produced'' gas using ICP-MS showed that uranium could not be detected at a detection limit of 0.019ppm-wt. A process to make WF{sub 6} from WO{sub 2}, and UF{sub 4}, produced a WOF{sub 4} intermediate, which proved difficult to convert to tungsten hexafluoride using titanium fluoride as a fluorinating agent.

Superconducting radio-frequency cavities made from medium and low-purity niobium ingots

Science.gov (United States)

Ciovati, Gianluigi; Dhakal, Pashupati; Myneni, Ganapati R.

2016-06-01

Superconducting radio-frequency cavities made of ingot niobium with residual resistivity ratio (RRR) greater than 250 have proven to have similar or better performance than fine-grain Nb cavities of the same purity, after standard processing. The high purity requirement contributes to the high cost of the material. As superconducting accelerators operating in continuous-wave typically require cavities to operate at moderate accelerating gradients, using lower purity material could be advantageous not only to reduce cost but also to achieve higher Q 0-values. In this contribution we present the results from cryogenic RF tests of 1.3-1.5 GHz single-cell cavities made of ingot Nb of medium (RRR = 100-150) and low (RRR = 60) purity from different suppliers. Cavities made of medium-purity ingots routinely achieved peak surface magnetic field values greater than 70 mT with an average Q 0-value of 2 × 1010 at 2 K after standard processing treatments. The performances of cavities made of low-purity ingots were affected by significant pitting of the surface after chemical etching.

The determination of boron in aluminium of high purity

International Nuclear Information System (INIS)

Cook, E.B.T.; Holan, H.

1977-01-01

A description is given of the investigations that led to the development of chemical methods for the determination of boron within the range 0,25 to 1,0 p.p.m. in aluminium of high purity. Methods were developed that incorporated fluorimetry, directly in solutions containing aluminium and after separation of boron by liquid-liquid extraction into 2-ethyl-1,3 hexanediol. A published spectrophotometric method, involving extraction of the BF 4 sup(-) complex with methylene blue into dichloroethane, was modified for application to alluminium samples. Details of this modified procedure and the fluorimetric-extraction procedure are appended. The precision of the methylene-blue method is about 6 percent relative and is recommended for precision and speed in preference to others. Separation of boron by distillation and spectrophotometric determination with curcumin gave low values in comparison with those obtained by the other methods. Agreement between the boron values obtained on the samples tested was good for the fluorimetric and methylene-blue spectrophotometric methods

Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

International Nuclear Information System (INIS)

Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.

2008-01-01

Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo

2018-04-14

The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

Some aspects of the metal purity in high strength Al-alloys

International Nuclear Information System (INIS)

Banizs, K.; Csernay-Balint, J.; Voeroes, G.

1990-01-01

The effect of Fe and Si on the properties of some high strength age-hardenable Al-alloys was investigated. It was found that a certain quantity (> 0.15 %) of Fe is advantageous to the formation of the cell-structure in the cast ingot both in the AlCuMg and AlZnMgCu alloys. An increased Fe-content causes a finer cell-structure. A higher Fe:Si ratio results in more homogeneous cell size distribution. Higher Si-content in the alloy decreases the favourable cast parameter range and increases the inclination to cracking of large diameter (> 270 mm) ingots. The reason of the correlation found between metal purity and mechanical properties is discussed

Structure and physical properties of Cr_5B_3-type Ta_5Si_3 and Ta_5Ge_3

International Nuclear Information System (INIS)

Yuan, Fang; Forbes, Scott; Ramachandran, Krishna Kumar; Mozharivskyj, Yurij

2015-01-01

The Cr_5B_3-type Ta_5Si_3 phase was prepared by arc-melting, while the Cr_5B_3-type Ta_5Ge_3 one was synthesized through sintering at 1000 °C. X-ray single crystal diffraction was employed to elucidate their structure. According to the magnetization measurements, both Ta_5Si_3 and Ta_5Ge_3 are Pauli paramagnets, with Ta_5Ge_3 showing a Curie-Weiss-like paramagnetic behavior at low temperatures likely due to presence of paramagnetic impurity. Both Ta_5Si_3 and Ta_5Ge_3 display a very low electrical resistivity from 2 to 300 K. The resistivity is constant below 20 K, but displays a positive temperature coefficient above 20 K. Electronic structure calculations with the TB-LMTO-ASA method support the metallic character of the two phases and suggest that the bonding is optimized in both phases. - Highlights: • Synthesis of Cr_5B_3-type Ta_5Si_3 and Ta_5Ge_3 phases with high purity by arc-melting and sintering, respectively. • Magnetization data and electrical resistivity of the Cr_5B_3-type Ta_5Si_3 and Ta_5Ge_3 phases. • Crystal and electronic structure analysis for Ta_5Si_3 and Ta_5Ge_3 phase by X-ray diffraction and TB-LMTO-ASA calculations.

Nitride passivation of the interface between high-k dielectrics and SiGe

Energy Technology Data Exchange (ETDEWEB)

Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

2016-01-04

In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

Mesophase Formation Stabilizes High-purity Magic-sized Clusters

KAUST Repository

Nevers, Douglas R.; Williamson, Curtis B.; Savitzky, Benjamin H; Hadar, Ido; Banin, Uri; Kourkoutis, Lena F.; Hanrath, Tobias; Robinson, Richard D.

2018-01-01

Magic-sized clusters (MSCs) are renowned for their identical size and closed-shell stability that inhibit conventional nanoparticle (NP) growth processes. Though MSCs have been of increasing interest, understanding the reaction pathways toward their nucleation and stabilization is an outstanding issue. In this work, we demonstrate that high concentration synthesis (1000 mM) promotes a well-defined reaction pathway to form high-purity MSCs (>99.9%). The MSCs are resistant to typical growth and dissolution processes. Based on insights from in-situ X-ray scattering analysis, we attribute this stability to the accompanying production of a large, hexagonal organic-inorganic mesophase (>100 nm grain size) that arrests growth of the MSCs and prevents NP growth. At intermediate concentrations (500 mM), the MSC mesophase forms, but is unstable, resulting in NP growth at the expense of the assemblies. These results provide an alternate explanation for the high stability of MSCs. Whereas the conventional mantra has been that the stability of MSCs derives from the precise arrangement of the inorganic structures (i.e., closed-shell atomic packing), we demonstrate that anisotropic clusters can also be stabilized by self-forming fibrous mesophase assemblies. At lower concentration (<200 mM or >16 acid-to-metal), MSCs are further destabilized and NPs formation dominates that of MSCs. Overall, the high concentration approach intensifies and showcases inherent concentration-dependent surfactant phase behavior that is not accessible in conventional (i.e., dilute) conditions. This work provides not only a robust method to synthesize, stabilize, and study identical MSC products, but also uncovers an underappreciated stabilizing interaction between surfactants and clusters.

Mesophase Formation Stabilizes High-purity Magic-sized Clusters

KAUST Repository

Nevers, Douglas R.

2018-01-27

Magic-sized clusters (MSCs) are renowned for their identical size and closed-shell stability that inhibit conventional nanoparticle (NP) growth processes. Though MSCs have been of increasing interest, understanding the reaction pathways toward their nucleation and stabilization is an outstanding issue. In this work, we demonstrate that high concentration synthesis (1000 mM) promotes a well-defined reaction pathway to form high-purity MSCs (>99.9%). The MSCs are resistant to typical growth and dissolution processes. Based on insights from in-situ X-ray scattering analysis, we attribute this stability to the accompanying production of a large, hexagonal organic-inorganic mesophase (>100 nm grain size) that arrests growth of the MSCs and prevents NP growth. At intermediate concentrations (500 mM), the MSC mesophase forms, but is unstable, resulting in NP growth at the expense of the assemblies. These results provide an alternate explanation for the high stability of MSCs. Whereas the conventional mantra has been that the stability of MSCs derives from the precise arrangement of the inorganic structures (i.e., closed-shell atomic packing), we demonstrate that anisotropic clusters can also be stabilized by self-forming fibrous mesophase assemblies. At lower concentration (<200 mM or >16 acid-to-metal), MSCs are further destabilized and NPs formation dominates that of MSCs. Overall, the high concentration approach intensifies and showcases inherent concentration-dependent surfactant phase behavior that is not accessible in conventional (i.e., dilute) conditions. This work provides not only a robust method to synthesize, stabilize, and study identical MSC products, but also uncovers an underappreciated stabilizing interaction between surfactants and clusters.

Superconducting radio-frequency cavities made from medium and low-purity niobium ingots

International Nuclear Information System (INIS)

Ciovati, Gianluigi; Dhakal, Pashupati; Myneni, Ganapati R

2016-01-01

Superconducting radio-frequency cavities made of ingot niobium with residual resistivity ratio (RRR) greater than 250 have proven to have similar or better performance than fine-grain Nb cavities of the same purity, after standard processing. The high purity requirement contributes to the high cost of the material. As superconducting accelerators operating in continuous-wave typically require cavities to operate at moderate accelerating gradients, using lower purity material could be advantageous not only to reduce cost but also to achieve higher Q 0 -values. In this contribution we present the results from cryogenic RF tests of 1.3–1.5 GHz single-cell cavities made of ingot Nb of medium (RRR = 100–150) and low (RRR = 60) purity from different suppliers. Cavities made of medium-purity ingots routinely achieved peak surface magnetic field values greater than 70 mT with an average Q 0 -value of 2 × 10 10 at 2 K after standard processing treatments. The performances of cavities made of low-purity ingots were affected by significant pitting of the surface after chemical etching. (paper)

Tuning for optimal performance in angle control, uniformity, and energy purity

International Nuclear Information System (INIS)

Liebert, Reuel B.; Olson, Joseph C.; Arevalo, Edwin A.; Downey, Daniel F.

2005-01-01

Advances in reducing the sizes of device structures and line widths place increasing demands on the accuracy of dopant placement and the control of dopant motion during activation anneals. Serial process high current ion implantation systems seek to produce beams in which the angles are controlled to high precision avoiding the angles introduced by conical structures used for holding wafers on spinning discs in batch systems. However, ion optical corrections and control of incident beam angle, dose uniformity, high throughput and energy purity often present apparently contradictory requirements in machine design. Data is presented to illustrate that tuning procedures can be used to simultaneously optimize angle purity in both x and y planes as well as control energy purity and dose uniformity

Effect of Aluminum Purity on the Pore Formation of Porous Anodic Alumina

International Nuclear Information System (INIS)

Kim, Byeol; Lee, Jin Seok

2014-01-01

Anodic alumina oxide (AAO), a self-ordered hexagonal array, has various applications in nanofabrication such as the fabrication of nanotemplates and other nanostructures. In order to obtain highly ordered porous alumina membranes, a two-step anodization or prepatterning of aluminum are mainly conducted with straight electric field. Electric field is the main driving force for pore growth during anodization. However, impurities in aluminum can disturb the direction of the electric field. To confirm this, we anodized two different aluminum foil samples with high purity (99.999%) and relatively low purity (99.8%), and compared the differences in the surface morphologies of the respective aluminum oxide membranes produced in different electric fields. Branched pores observed in porous alumina surface which was anodized in low-purity aluminum and the size; dimensions of the pores were found to be usually smaller than those obtained from high-purity aluminum. Moreover, anodization at high voltage proceeds to a significant level of conversion because of the high speed of the directional electric field. Consequently, anodic alumina membrane of a specific morphology, i. e., meshed pore, was produced

Effect of Aluminum Purity on the Pore Formation of Porous Anodic Alumina

Energy Technology Data Exchange (ETDEWEB)

Kim, Byeol; Lee, Jin Seok [Sookmyung Women' s Univ., Seoul (Korea, Republic of)

2014-02-15

Anodic alumina oxide (AAO), a self-ordered hexagonal array, has various applications in nanofabrication such as the fabrication of nanotemplates and other nanostructures. In order to obtain highly ordered porous alumina membranes, a two-step anodization or prepatterning of aluminum are mainly conducted with straight electric field. Electric field is the main driving force for pore growth during anodization. However, impurities in aluminum can disturb the direction of the electric field. To confirm this, we anodized two different aluminum foil samples with high purity (99.999%) and relatively low purity (99.8%), and compared the differences in the surface morphologies of the respective aluminum oxide membranes produced in different electric fields. Branched pores observed in porous alumina surface which was anodized in low-purity aluminum and the size; dimensions of the pores were found to be usually smaller than those obtained from high-purity aluminum. Moreover, anodization at high voltage proceeds to a significant level of conversion because of the high speed of the directional electric field. Consequently, anodic alumina membrane of a specific morphology, i. e., meshed pore, was produced.

High Purity Hydrogen Production with In-Situ Carbon Dioxide and Sulfur Capture in a Single Stage Reactor

Energy Technology Data Exchange (ETDEWEB)

Nihar Phalak; Shwetha Ramkumar; Daniel Connell; Zhenchao Sun; Fu-Chen Yu; Niranjani Deshpande; Robert Statnick; Liang-Shih Fan

2011-07-31

Enhancement in the production of high purity hydrogen (H{sub 2}) from fuel gas, obtained from coal gasification, is limited by thermodynamics of the water gas shift (WGS) reaction. However, this constraint can be overcome by conducting the WGS in the presence of a CO{sub 2}-acceptor. The continuous removal of CO{sub 2} from the reaction mixture helps to drive the equilibrium-limited WGS reaction forward. Since calcium oxide (CaO) exhibits high CO{sub 2} capture capacity as compared to other sorbents, it is an ideal candidate for such a technique. The Calcium Looping Process (CLP) developed at The Ohio State University (OSU) utilizes the above concept to enable high purity H{sub 2} production from synthesis gas (syngas) derived from coal gasification. The CLP integrates the WGS reaction with insitu CO{sub 2}, sulfur and halide removal at high temperatures while eliminating the need for a WGS catalyst, thus reducing the overall footprint of the hydrogen production process. The CLP comprises three reactors - the carbonator, where the thermodynamic constraint of the WGS reaction is overcome by the constant removal of CO{sub 2} product and high purity H{sub 2} is produced with contaminant removal; the calciner, where the calcium sorbent is regenerated and a sequestration-ready CO{sub 2} stream is produced; and the hydrator, where the calcined sorbent is reactivated to improve its recyclability. As a part of this project, the CLP was extensively investigated by performing experiments at lab-, bench- and subpilot-scale setups. A comprehensive techno-economic analysis was also conducted to determine the feasibility of the CLP at commercial scale. This report provides a detailed account of all the results obtained during the project period.

Automation of the Characterization of High Purity Germanium Detectors

Science.gov (United States)

Dugger, Charles ``Chip''

2014-09-01

Neutrinoless double beta decay is a rare hypothesized process that may yield valuable insight into the fundamental properties of the neutrino. Currently there are several experiments trying to observe this process, including the Majorana DEMONSTRAOR experiment, which uses high purity germanium (HPGe) detectors to generate and search for these events. Because the event happens internally, it is essential to have the lowest background possible. This is done through passive detector shielding, as well as event discrimination techniques that distinguish between multi-site events characteristic of gamma-radiation, and single-site events characteristic of neutrinoless double beta decay. Before fielding such an experiment, the radiation response of the detectors must be characterized. A robotic arm is being tested for future calibration of HPGe detectors. The arm will hold a source at locations relative to the crystal while data is acquired. Several radioactive sources of varying energy levels will be used to determine the characteristics of the crystal. In this poster, I will present our work with the robot, as well as the characterization of data we took with an underground HPGe detector at the WIPP facility in Carlsbad, NM (2013). Neutrinoless double beta decay is a rare hypothesized process that may yield valuable insight into the fundamental properties of the neutrino. Currently there are several experiments trying to observe this process, including the Majorana DEMONSTRAOR experiment, which uses high purity germanium (HPGe) detectors to generate and search for these events. Because the event happens internally, it is essential to have the lowest background possible. This is done through passive detector shielding, as well as event discrimination techniques that distinguish between multi-site events characteristic of gamma-radiation, and single-site events characteristic of neutrinoless double beta decay. Before fielding such an experiment, the radiation response of

Recovery of high purity proteins from polyacrylamide gels using ultraviolet scanning densitometry

International Nuclear Information System (INIS)

Bartolini, P.; Arkaten, R.; Ribela, M.T.C.P.

1988-07-01

We present here a technique for the purification of proteins carried out by a quantitative analytical method used in conjunction with a preparative gel electrophoresis. Both methods employ densitometric ultraviolet scanning of unstained protein bands, a procedure wich is particulary suitable for the purification and recovery of biologically active polypeptides. In short, the purified extracted protein, isolated in a segment cut out from a preparative gel, is recovered by a second (reversed) electrophoresis. We performed the extractions and recoveries of different amounts of two standard proteins (BSA and STI) and a polypeptide hormone (hGH). Our main interest, especially for the hormone is the complete protein recovery with retention of bio and immunoactivity and high purity. For the proteins tested, the mean recovery was of 93 + - 5% obtaining a mean purity of 95 + - 7%. We conclude that the proposed method should have interesting applications, particularly in the obtention of very pure hormones, as are needed for radioligand assays, for radiolabelling and specific antibody raising. We emphasize the simplicity and rapidity of the method (the entire preparative process: first electrophoresis, UV scanning and reversed electrophoresis can be performed in approximately six hours) and its efficiency in recovering pure proteins even on a milligram scale. We thank the support from the IAEA (4299/RB) and FINEP (43.86.0351.00) and CENE (Brazil). (author) [pt

Hp Ge: Purification, crystal growth, and annealing properties

International Nuclear Information System (INIS)

Hall, R.N.

1984-01-01

The prospects for growing HP Ge crystals of increased size and purity are examined. One interesting approach is to grow dislocation-free crystals, which must then be annealed to reduce the concentration of V 2 H traps. The phenomena which occur during annealing are discussed and compared with experiment. Hydrogen, present in atomic form at the growth temperature, forms H 2 molecules during cooling, causing the effective diffusion coefficient to decrease rapidly. Models representing the reactions between H and the V 2 H, A(H, Si), and D(H,O) complexes are presented and analyzed

Spall behaviors of high purity copper under sweeping detonation

Energy Technology Data Exchange (ETDEWEB)

Yang, Yang, E-mail: yangyanggroup@163.com [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900 (China); National Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081 (China); Key Laboratory of Nonferrous Metals Material Science and Engineering of Ministry of Education, Central South University, Changsha 410083 (China); Zhi-qiang, Peng; Xing-zhi, Chen [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Key Laboratory of Nonferrous Metals Material Science and Engineering of Ministry of Education, Central South University, Changsha 410083 (China); Zhao-liang, Guo; Tie-gang, Tang; Hai-bo, Hu [Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900 (China); Qing-ming, Zhang [National Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081 (China)

2016-01-10

Suites of sweeping detonation experiments were conducted to assess the spall behavior of high purity copper samples with different heat treatment histories. Incipient spall samples were obtained at different sweeping detonation condition. Metallographic and Electron Backscattered Diffraction (EBSD) analyses were performed on the soft-recovered samples. The effects of grain boundaries, grain size, crystal orientation and loading direction on the spall behaviors were discussed. Spall plane branching was found in the main spall plane of the damage samples. For similar microstructure, the area of voids increase with the increase of shock stress, and the coalescence of voids also become more obvious. Results from EBSD analysis show that the grain sizes were decreased and the grains were elongated along the direction of the plate width. Triple junctions composed of two or more general high angle boundaries are the preferred locations for intergranular damage. Voids prefer to nucleate in the grain boundaries composed of grain with high Taylor Factor (TF) than other grains. The damage areas in the grains with high TF are more severe. Boundaries close to perpendicular to the loading direction are more susceptible to void nucleation than the boundaries close to parallel to the loading direction, but the difference of voids nucleated in these two boundaries is less significant than the results obtained by plate impact experiment. It would be caused by the obliquity between the shock loading direction and the plate normal.

Ge distribution in the Wulantuga high-germanium coal deposit in the Shengli coalfield, Inner Mongolia, northeastern China

Energy Technology Data Exchange (ETDEWEB)

Du, Gang [Key Laboratory of Marginal Sea Geology, Chinese Academy of Sciences (China)]|[Coal Geology Bureau of Inner Mongolia, Hohhot, 010051 (China); Zhuang, Xinguo [Institute of Sedimentary Basin and Mineral, Faculty of Earth Resources, China University of Geosciences, Hubei, 430074 (China)]|[State Key Laboratory of Geological Processes and Mineral Resources, China University of Geosciences, Hubei, 430074 (China); Querol, Xavier; Izquierdo, Maria; Alastuey, Andres; Moreno, Teresa; Font, Oriol [Institute of Earth Science ' Jaume Almera' , CSIC, C/ LLuis Sole Sabaris s/n, 08028 Barcelona (Spain)

2009-03-01

The geological and geochemical controls of the Ge distribution in the Cretaceous Wulantuga high-Germanium coal deposit in the Shengli coal field, Inner Mongolia are investigated. This paper focuses mainly on the spatial distribution of the Ge contents in coal. The high-Ge coals mainly occur in three splits of the 6 coal in the southwestern part of the Shengli coal field. Mean germanium contents in the coal range from 32 to 820 {mu}g/g, with a mean value of 137 {mu}g/g, on a bulk coal basis (mean of 939 coal samples from 75 boreholes in the 6 coal seam) in an area of 2.2 km{sup 2}. The highest Ge content occurs SW of 6 coal seam, close to the margins of the coal basin, decreasing with a fan-shaped trend towards NW, the direction of the coal basin. There is an negative correlation between the mean Ge content and the thickness of the coal seam. Different distribution patterns of Ge content were found in vertical profiles. High Ge concentrations may occur in the middle parts of coal seams, at the bottom and/or the top of thick coal seams and inconspicuous variation. A major organic affinity was determined for Ge, with a special enriched in the banded bright and semibright coal. The high-Ge coals and the coalified wood in the sandstone overlaying the 6-1 coal highly enriched in Ge, As, Sb, W, Cs, Tl, Be, and Hg. The Late Jurassic silicified volcanic rocks in the NW of the Ge coal deposit relatively high enriched in Ge, Ga, Sb, As, Cs, Be, Ge and Hg. The correlation coefficients among the elements enriched showed marked variations at close sites in this deposit, suggesting a possible diagenetic origin of the geochemical anomaly. The main Ge anomaly was attributed to early Cretaceous hydrothermal fluids circulating through the fault systems and porous volcanic rocs, probably from the subjacent granitoid rocks. The fault systems, the porous coarse clastic rocks overlying coal seam and the lithotype of coal played an important role in the transport and trapping of Ge. A

A simple dissolved metals mixing method to produce high-purity MgTiO3 nanocrystals

International Nuclear Information System (INIS)

Pratapa, Suminar; Baqiya, Malik A.; Istianah,; Lestari, Rina; Angela, Riyan

2014-01-01

A simple dissolved metals mixing method has been effectively used to produce high-purity MgTiO 3 (MT) nanocrystals. The method involves the mixing of independently dissolved magnesium and titanium metal powders in hydrochloric acid followed by calcination. The phase purity and nanocrystallinity were determined by making use of laboratory x-ray diffraction data, to which Rietveld-based analyses were performed. Results showed that the method yielded only one type magnesium titanate powders, i.e. MgTiO 3 , with no Mg 2 TiO 4 or MgTi 2 O 5 phases. The presence of residual rutile or periclase was controlled by adding excessive Mg up to 5% (mol) in the stoichiometric mixing. The method also resulted in MT nanocrystals with estimated average crystallite size of 76±2 nm after calcination at 600°C and 150±4 nm (at 800°C). A transmission electron micrograph confirmed the formation of the nanocrystallites

Gain limits of a Thick GEM in high-purity Ne, Ar and Xe

CERN Document Server

Miyamoto, J; Peskov, V

2010-01-01

The dependence of the avalanche charge gain in Thick Gas Electron Multipliers (THGEM) on the purity of Ne, Ar and Xe filling gases was investigated. The gain, measured with alpha-particles in standard conditions (atmospheric pressure, room temperature), was found to considerably drop in gases purified by non-evaporable getters. On the other hand, small N2 admixtures to noble gases resulted in high reachable gains. The results are of general relevance in the operation of gas-avalanche detectors in noble gases, particularly that of two-phase cryogenic detectors for rare events.

Synthesis of high-purity Li{sub 8}ZrO{sub 6} powder by solid state reaction under hydrogen atmosphere

Energy Technology Data Exchange (ETDEWEB)

Shin-mura, Kiyoto; Otani, Yu; Ogawa, Seiya [Course of Mechanical Engineering, Graduate School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Niwa, Eiki; Hashimoto, Takuya [Department of Physics, College of Humanities and Sciences, Nihon University, 3-8-1 Sakurajousui, Setagaya-ku, Tokyo 156-8550 (Japan); Hoshino, Tsuyoshi [Breeding Functional Materials Development Group, Department of Blanket Systems Research, Rokkasho Fusion Institute, Sector of Fusion Research and Development, Japan Atomic Energy Agency, 2-166 Obuchi, Omotedate, Rokkasho-mura, Kamikita-gun, Aomori 039-3212 (Japan); Sasaki, Kazuya, E-mail: k_sasaki@tokai-u.ac.jp [Course of Mechanical Engineering, Graduate School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Department of Prime Mover Engineering, School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan)

2016-11-01

Highlights: • A fine pure Li{sub 8}ZrO{sub 6} powder was synthesized by using Li{sub 2}CO{sub 3} and ZrO{sub 2} via a solid state reaction. • Influences on the purity of product powder, lattice defect, and crystal orientation were revealed. • The suitable synthesis conditions of the fine and high purity Li{sub 8}ZrO{sub 6} powder were found. • The reaction process of the synthesis of Li{sub 8}ZrO{sub 6} was estimated. - Abstract: Li{sub 8}ZrO{sub 6} contains a large amount of Li and has a significant potential as a tritium breeder. However, few syntheses of fine-grain, high-purity Li{sub 8}ZrO{sub 6} powder have been reported. In this study, a high-purity powder of Li{sub 8}ZrO{sub 6} was synthesized by solid state reaction under hydrogen atmosphere combined with an effective lithium source and a suitable initial Li:Zr molar ratio. Mixed powders of Li{sub 2}CO{sub 3} and ZrO{sub 2} were fired at around 630 °C in H{sub 2} for several hours and several firing cycles. The low firing temperature inhibited the vaporization of Li during the heating, so that excessive amounts of Li were not needed for the synthesis, and the Li:Zr ratio in the starting material was 10:1 (mol:mol). In this synthesis, Li{sub 2}O was generated via the decomposition of Li{sub 2}CO{sub 3} during firing in H{sub 2}, and reacted with ZrO{sub 2} to form Li{sub 6}Zr{sub 2}O{sub 7}, which reacted with itself to form Li{sub 8}ZrO{sub 6}.

High-pressure torsion of aluminum with ultrahigh purity (99.9999%) and occurrence of inverse Hall-Petch relationship

Energy Technology Data Exchange (ETDEWEB)

Ito, Yuki [Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395 (Japan); Edalati, Kaveh, E-mail: Kaveh.edalati@zaiko6.zaiko.kyushu-u.ac.jp [Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395 (Japan); WPI, International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, Fukuoka 819-0395 (Japan); Horita, Zenji [Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395 (Japan); WPI, International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, Fukuoka 819-0395 (Japan)

2017-01-02

Severe plastic deformation through the high-pressure torsion (HPT) method was applied to pure aluminum with a wide range of purity levels such as 99% (A1100), 99.5% (A1050), 99.99% (4NAl), 99.999% (5NAl) and 99.9999% (6NAl). The hardness of 6NAl decreased with straining and saturated to a level below the hardness level of the annealed sample. This softening behavior, which was similar to the behavior of metals with low melting temperatures such as indium, tin, lead and zinc, was not observed in 5NAl or less pure Al. It was found that the grain-size dependence of hardness became less significant with increasing the purity level, while the HPT-processed 6NAl followed an inverse Hall-Petch relationship. In 6NAl with large grain sizes, dislocations accumulated in the grains in the form of dislocation cells and enhanced the hardness, but when the grain size was small, the dislocations moved fast and disappeared in high-angle grain boundaries.

Synthesis of high purity tungsten nanoparticles from tungsten heavy alloy scrap by selective precipitation and reduction route

International Nuclear Information System (INIS)

Kamal, S.S. Kalyan; Sahoo, P.K.; Vimala, J.; Shanker, B.; Ghosal, P.; Durai, L.

2016-01-01

In this paper we report synthesis of tungsten nanoparticles of high purity >99.7 wt% from heavy alloy scrap using a novel chemical route of selective precipitation and reduction. The effect of Poly(vinylpyrrolidone) polymer on controlling the particle size is established through FTIR spectra and corroborated with TEM images, wherein the average size decreased form 210 to 45 nm with increasing PVP content from zero to 2 g under different experimental conditions. This process is economical as raw material is a scrap and the efficiency of the reaction is >95%. - Highlights: • Tungsten nanoparticles were synthesized from tungsten heavy alloy scrap. • A novel chemical route of precipitation and reduction with Poly(vinylpyrrolidone) polymer as stabilizer is reported. • The average size decreased form 210 to 45 nm with increasing PVP content from zero to 2 g. • High pure tungsten nanoparticles of >99.7% purity could be synthesized using this route. • Efficiency of the reaction is >95%.

Ge1−xSix on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

International Nuclear Information System (INIS)

Lee, Chang-Chun; Hsieh, Chia-Ping; Huang, Pei-Chen; Cheng, Sen-Wen; Liao, Ming-Han

2016-01-01

The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge 1−x Si x alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge 1−x Si x alloys, namely, Ge 0.96 Si 0.04 , Ge 0.93 Si 0.07 , and Ge 0.86 Si 0.14 , are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge 1−x Si x alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge 0.86 Si 0.14 stressor within the device channel. Furthermore, the stresses (S yy ) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge 1−x Si x alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n-channel metal–oxide semiconductor field-effect transistor is investigated

Damage process of high purity tungsten coatings by hydrogen beam heat loads

International Nuclear Information System (INIS)

Tamura, S.; Tokunaga, K.; Yoshida, N.; Taniguchi, M.; Ezato, K.; Sato, K.; Suzuki, S.; Akiba, M.; Tsunekawa, Y.; Okumiya, M.

2005-01-01

To investigate the synergistic effects of heat load and hydrogen irradiation, cyclic heat load tests with a hydrogen beam and a comparable electron beam were performed for high purity CVD-tungsten coatings. Surface modification was examined as a function of the peak temperature by changing the heat flux. Scanning Electron Microscopy analysis showed that the surface damage caused by the hydrogen beam was more severe than that by the electron beam. In the hydrogen beam case, cracking at the surface occurred at all peak temperatures examined from 300 deg. C to 1600 deg. C. These results indicate that the injected hydrogen induces embrittlement for the CVD-tungsten coating

Purity Evaluation of Single-Walled Carbon Nanotubes Using Thermogravimetric Analysis

International Nuclear Information System (INIS)

Goak, Jeung Choon; Kim, Tae Yang; Jung, Jongwan; Seo, Young-Soo; Lee, Naesung; Sok, Junghyun

2013-01-01

This study evaluated the purity of single-walled carbon nanotubes (SWCNTs) in the arc-synthesized SWCNT samples by using thermogravimetric analysis (TGA). The as-produced SWCNT samples were heat-treated in air for 20 h at 275-475°C and characterized by scanning and transmission electron microscopes and TGA to establish oxidation temperature ranges of SWCNTs and carbonaceous impurities comprising the samples. Based on these oxidation temperature ranges, derivative thermogravimetric curves were deconvoluted, and differentiated peaks were assigned to SWCNTs and carbonaceous impurities. The compositions and the SWCNT purities of the samples were obtained simply by calculating the areal ratios under the deconvoluted curves. TGA studies on purity evaluation and thermal stabilities of SWCNTs and carbonaceous impurities are likely to provide us with a simple route of thermal oxidation purification to acquire high-purity SWCNT samples.

Fiber sensor on the basis of Ge26As17Se25Te32 glass for FEWS analysis

Science.gov (United States)

Velmuzhov, A. P.; Shiryaev, V. S.; Sukhanov, M. V.; Kotereva, T. V.; Churbanov, M. F.; Zernova, N. S.; Plekhovich, A. D.

2018-01-01

The high-purity Ge26As17Se25Te32 glass sample was prepared by chemical distillation purification method. This glass is characterized by high value of glass transition temperature (263°С), high optical transparency in the spectral range of 2-10 μm, and low content of residual impurities. The Ge26As17Se25Te32 glass rods were drawn into single-index fibers using the "rod" method and the single crucible technique. The optical losses in the 400 μm diameter fiber, fabricated by the "rod" method, were within 0.3-1 dB/m in the spectral range 5.2-9.3 μm. The minimum optical losses in the 320 μm diameter fiber, fabricated by the "crucible" technique, were 1.6-1.7 dB/m in the spectral range 6-8.5 μm. Using these Ge26As17Se25Te32 glass fibers as a sensor, the aqueous solutions of acetone (0-20 mol.%) and ethanol (0-90 mol.%) were analyzed by fiber evanescent wave spectroscopy. Peculiarities in the change of the integrated intensity and spectral position of absorption bands of these organic substances in dependence on the analyte composition and the length of the sensitive zone were established.

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

Directory of Open Access Journals (Sweden)

Wei-Cheng Kuo

2016-01-01

Full Text Available We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD at low growth temperature (180°C. The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD and spectroscopy ellipsometry (SE. The full width at half maximum (FWHM of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

Science.gov (United States)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

Effect of temperature on corrosion of steels in high purity water

International Nuclear Information System (INIS)

Honda, Takashi; Kashimura, Eiji; Ohashi, Kenya; Furutani, Yasumasa; Ohsumi, Katsumi; Aizawa, Motohiro; Matsubayashi, Hideo.

1987-01-01

Effect of temperature on corrosion behavior of steels was evaluated in the range of 150 - 300 deg C in high purity water containing about 200 ppb oxygen. The exposure tests were carried out in actual and simulated reactor water of BWR plants. Through X-ray diffractometry, SIMS, XPS and chemical analyses, it was clarified that the chemical composition and morphology of oxide films formed on austenitic stainless steel changed above about 250 deg C. Chromium dissolved easily through corrosion above this temperature, and the oxide films primarily consisted of spinel type oxides containing high concentration of nickel. Further, as the protectivety of oxide films increased with temperature, the corrosion rate had a peak around 250 deg C after a long exposure period. A major phase of oxide films on carbon steel was magnetite in the whole temperature range. However, as the oxide films formed at high temperatures had very compact structures, the effect of temperature on the corrosion rate was similar to that observed on stainless steel. (author)

Effects of cyclic tensile loading on stress corrosion cracking susceptibility for sensitized Type 304 stainless steel in 290 C high purity water

International Nuclear Information System (INIS)

Takaku, H.; Tokiwai, M.; Hirano, H.

1979-01-01

The effects of load waveform on intergranular stress corrosion cracking (IGSCC) susceptibility have been examined for sensitized Type 304 stainless steels in a 290 C high purity water loop. Concerning the strain rate in the trapezoidal stress waveform, it was found that IGSCC susceptibility was higher for smaller values of the strain rate. It was also shown that IGSCC susceptibility became higher when the holding time at the upper stress was prolonged, and when the upper stress was high. The occurrence of IGSCC for sensitized Type 304 stainless steel became easy due to the application of cyclic tensile stress in 290 C high purity water

High-purity fatty acid methyl ester production from canola, soybean, palm, and yellow grease lipids by means of a membrane reactor

International Nuclear Information System (INIS)

Cao Peigang; Dube, Marc A.; Tremblay, Andre Y.

2008-01-01

High-purity fatty acid methyl ester (FAME) was produced from different lipids, such as soybean oil, canola oil, a hydrogenated palm oil/palm oil blend, yellow grease, and brown grease, combined with methanol using a continuous membrane reactor. The membrane reactor combines reaction and separation in a single unit, provides continuous mixing of raw materials, and maintains a high molar ratio of methanol to lipid in the reaction loop while maintaining two phases during the reaction. It was demonstrated that the membrane reactor can be operated using a very broad range of feedstocks at highly similar operating conditions to produce FAME. The total glycerine and free glycerine contents of the FAME produced were below the ASTM D6751 standard after a single reaction step. Under essentially the same reaction conditions, a conventional batch reaction was not able to achieve the same degree of FAME purity. The effect of the fatty acid composition of the lipid feedstocks on the FAME purity was also shown. It was demonstrated that, due to the fatty acid composition, FAME from virgin soybean oil and virgin canola oil was produced in the membrane reactor within ASTM specifications even without a water washing step

High-field magnetization of UCuGe single crystal

Czech Academy of Sciences Publication Activity Database

Andreev, Alexander V.; Mushnikov, N. V.; Gozo, T.; Honda, F.; Sechovský, V.; Prokeš, K.

346-347, - (2004), s. 132-136 ISSN 0921-4526 R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : uranium intermetallics * UCuGe * high fields * magnetic anisotropy * field-induced phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.679, year: 2004

A sample of high multiplicity pp reactions at 19 GeV/c

International Nuclear Information System (INIS)

Allan, J.; Blomqvist, G.

1976-02-01

This report describes the experimental procedure used in obtaining samples of high muliplicity pp reactions at 19 GeV/c. Various methods to improve the quality of the samples are tested. The analysis is part of the general study of pp collisions at 19 GeV/c which is performed within the Scandinavian Bubble Chamber Collaboration. (Auth.)

Development of high responsivity Ge:Ga photoconductors

International Nuclear Information System (INIS)

Haegel, N.M.; Hueschen, M.R.; Haller, E.E.

1984-06-01

Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10 -4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10 8 photons/sec at lambda=93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material

Comparison of Response Characteristics of High-Purity Germanium Detectors using Analog Versus Digital Processing

International Nuclear Information System (INIS)

Luke, S J; Raschke, K

2004-01-01

In this article we will discuss some of the results of the response characteristics of High Purity germanium detectors using analog versus digital processing of the signals that are outputted from the detector. The discussion will focus on whether or not there is a significant difference in the response of the detector with digital electronics that it limits the ability of the detection system to get reasonable gamma ray spectrometric results. Particularly, whether or not the performance of the analysis code Pu600 is compromised

Reduction of 68Ge activity containing liquid waste from 68Ga PET chemistry in nuclear medicine and radiopharmacy by solidification.

Science.gov (United States)

de Blois, Erik; Chan, Ho Sze; Roy, Kamalika; Krenning, Eric P; Breeman, Wouter A P

PET with 68 Ga from the TiO 2 - or SnO 2 - based 68 Ge/ 68 Ga generators is of increasing interest for PET imaging in nuclear medicine. In general, radionuclidic purity ( 68 Ge vs. 68 Ga activity) of the eluate of these generators varies between 0.01 and 0.001%. Liquid waste containing low amounts of 68 Ge activity is produced by eluting the 68 Ge/ 68 Ga generators and residues from PET chemistry. Since clearance level of 68 Ge activity in waste may not exceed 10 Bq/g, as stated by European Directive 96/29/EURATOM, our purpose was to reduce 68 Ge activity in solution from >10 kBq/g to <10 Bq/g; which implies the solution can be discarded as regular waste. Most efficient method to reduce the 68 Ge activity is by sorption of TiO 2 or Fe 2 O 3 and subsequent centrifugation. The required 10 Bq per mL level of 68 Ge activity in waste was reached by Fe 2 O 3 logarithmically, whereas with TiO 2 asymptotically. The procedure with Fe 2 O 3 eliminates ≥90% of the 68 Ge activity per treatment. Eventually, to simplify the processing a recirculation system was used to investigate 68 Ge activity sorption on TiO 2 , Fe 2 O 3 or Zeolite. Zeolite was introduced for its high sorption at low pH, therefore 68 Ge activity containing waste could directly be used without further interventions. 68 Ge activity containing liquid waste at different HCl concentrations (0.05-1.0 M HCl), was recirculated at 1 mL/min. With Zeolite in the recirculation system, 68 Ge activity showed highest sorption.

Validation of an HPLC method for determination of chemical purity of [18F]fluoromisonidazole ([18F]FMISO)

International Nuclear Information System (INIS)

Nascimento, Natalia C.E.S.; Oliveira, Mércia L.; Lima, Fernando R.A.; Silveira, Marina B.; Ferreira, Soraya Z.; Silva, Juliana B.

2017-01-01

[ 18 F]Fluoromisonidazole ([ 18 F]FMISO) is a nitroimidazole derivative labelled with fluorine-18 that selectively binds to hypoxic cells. It has been shown to be a suitable PET tracer for imaging hypoxia in tumors as well as in noncancerous tissues. [ 18 F]FMISO was prepared using a TRACERlabMX FDG ® module (GE) with cassettes, software sequence and reagents kits from ABX. In this work, we aimed to develop and to validate a new high performance liquid chromatography (HPLC) method for determination of chemical purity of [ 18 F]FMISO. Analyses were performed with an Agilent chromatograph equipped with radioactivity and UV detectors. [ 18 F]FMISO and impurities were separated on a C18 column by gradient elution with water and acetonitrile. Selectivity, linearity, detection limit (DL), quantification limit (LQ), precision, accuracy and robustness were assessed to demonstrate that the HPLC method is adequate for its intended purpose. The HPLC method showed a good precision, as all RSD values were lower than 5%. Robustness was evaluated considering a variation on parameters such mobile phase gradient and flow rate. Results evidenced that the HPLC method is validated and is suitable for radiochemical purity evaluation of [ 18 F]FMISO, considering operational conditions of our laboratory. As an extension of this work, other analytical methods used for [ 18 F]FMISO quality control should be evaluated, in compliance with good manufacture practice. (author)

The method for production of high purity carrier free ortophosphoric acid labeled with isotopes Phosphorus-32 and Phosphorus-33

International Nuclear Information System (INIS)

Abdukayumov, M.N.; Abdusalyamov, A.N.; Chistyakov, P.G.; Yuldashev, B.S.

2001-01-01

Extensive application for various radioactive isotopes was found in an extremity of the 20-Th century in a science and production. Labeled compounds are used with growing effectiveness in a molecular biology, gene engineering, medicine and other areas. Phosphorus-32 and Phosphorus-33 isotopes as a different labeled compounds that are used mainly in molecular biology are produced at the Radiopreparat enterprise of the Institute of Nuclear Physics of Academy of Sciences of Uzbekistan Republic. The quality of labeled preparations is very high. The specifications for above mentioned preparations corresponds to demands most of customers in different countries. P-32 or P-33 labeled orthophosphoric acid has high radiochemical purity (more than 99 %) and specific radioactivity close to theoretical. Orthophosphoric acid prepared by the described above method has radiochemical purity about 95 % and output of the target product 99%

Critical Behavior of Thermal Expansion and Magnetostriction in the Vicinity of the First order transition at the Curie Point of Gd₅(Si_xGe_1-x)₄

Energy Technology Data Exchange (ETDEWEB)

Han, Mangui [Iowa State Univ., Ames, IA (United States)

2004-01-01

-induced strain higher in the sample made from lower purity level Gd starting materials compared with the sample made from high purity Gd metal. TE, MS, MFM and VSM measurements on single crystal Gd₅(Si₂Ge₂) and Gd₅(Si_2.3Ge_1.7) samples have shown their strong anisotropic behaviors.

The rapid synthesis of high purity [{sup 18}F]butyrophenone neuroleptics from nitro precursors for PET study

Energy Technology Data Exchange (ETDEWEB)

Hashizume, Kazunari; Hashimoto, Naoto; Kato, Hiroo; Cork, D G; Miyake, Yoshihiro [National Cardiovascular Center, Suita, Osaka (Japan)

1995-04-01

We have completed rapid syntheses of [{sup 18}F]butyrophenone neuroleptics ([{sup 18}F]haloperidol and [{sup 18}F]spiperone) from their nitro precursors in high radiochemical yields (up to 21%) by combining a one-step nitro-fluoro exchange reaction and a novel high performance liquid chromatography (HPLC) separation method. The synthesis time was ca. 95 min and both the radiochemical and chemical purities of the labeled products were over 99%. (author).

A Measurement of GE^n at High Momentum Transfer in Hall A

Science.gov (United States)

Feuerbach, Robert J.; Wojtsekhowski, Bogdan

2006-10-01

A precision measurement of the electric form-factor of the neutron, GE^n, at Q^2 up to 3.5 GeV^2 was recently completed in Hall A at the Thomas Jefferson National Accelerator Facility(Jefferson Lab). The ratio GE^n/GM^n was measured through the beam-target asymmetry A of electrons quasi-elastically scattered off neutrons in the reaction ^3He(e,e' n). The experiment took advantage of recent developments of the electron beam and target, as well as two detectors new to Jefferson Lab. The measurement used the accelerator's 100% duty-cycle high-polarization (typically 84%) electron beam and a new, hybrid optically-pumped polarized ^3He target which achieved polarizations above 50%. A medium acceptance (80msr) open-geometry magnetic spectrometer (BigBite) detected the scattered electron, while a new neutron detector was constructed to observe the released neutron. An overview of the experiment and the experimental motivation will be discussed, in particular the large range of predictions from modern calculations for GE^n at this relatively high Q^2. Finally, the analysis progress and preliminary results will be presented.

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

2018-01-01

that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

Trace element affinities in two high-Ge coals from China

Energy Technology Data Exchange (ETDEWEB)

Jing Li; Xinguo Zhuang; Xavier Querol [China University of Geosciences, Wuhan (China). Faculty of Earth Resources

2011-01-15

The Lincang (Yunnan Province, Southwest China) and Wulantuga (Inner Mongolia, Northeast China) coal deposits are known because of the high-Ge content. These coals have also a high concentration of a number of other elements. To determine the mode of occurrence of the enriched elements in both coals, six density fractions from {lt} 1.43 to {gt} 2.8 g/cm{sup 3} were obtained from two representative samples using heavy-liquids. A number of peculiar geochemical patterns characterize these high-Ge coals. Thus, the results of the chemical analysis of these density fractions showed that both coals (very distant and of a different geological age) are highly enriched (compared with the usual worldwide coal concentration ranges) in Ge, As, Sb, W, Be, and Tl. This may be due to similar geochemistry of hydrothermal fluids influencing the Earth Crust in these regions of China. Moreover, Wulantuga coal (Early Cretaceous subbituminous coal) is also enriched in Ca, Mg, and Na, and Lincang coal (Neogene subbituminous coal) in K, Rb, Nb, Mo, Sn, Cs, and U. A group of elements consisting of Ge, W, B, Nb, and Sb mostly occur with an organic affinity in both coals. Additionally, Be, U, and Mo (and partially Mn and Zn) in Lincang, and Na and Mg in Wulantuga occur also with a major organic affinity. Both coals have sulfide-arsenide mineral assemblages (Fe, S, As, Sn, and Pb, and in addition to Tl, Ta, and Cs in the Lincang coal). The occurrence of Al, P, Li, Sc, Ti, V, Cr, and Zr in both coals, and Ba in Lincang, are associated with the mineral assemblage of silico-aluminates and minor heavy minerals. Furthermore, P, Na, Li, Sc, Ti, Ga, Rb, Zr, Cr, Ba, Th, and LREE (La, Ce, Pr, Nd, and Gd) in Lincang are associated with mineral assemblages of phosphates and minor heavy minerals. The two later mineral assemblages are derived from the occurrence of detrital minerals. 34 refs., 7 figs., 3 tabs.

High-Performance γ spectrometry Using Ge(Li) Detectors

International Nuclear Information System (INIS)

Brethon, J.; Libs, G.; Detourne, G.; Legrand, J.; Boulanger, J.

1968-01-01

This report describes a high resolution gamma spectrometer design which use Ge-Li detectors, a cooled field effect transistor preamplifier, and a spectrum stabiliser. The obtained resolution and the 122 keV gamma ray of the 57 Co is 0.96 keV, and 239 Pu, 233 Pa and 95 Zr + 95 Nb spectra are shown for the example. (authors) [fr

All electrochemical fabrication of a bilayer membrane composed of nanotubular photocatalyst and palladium toward high-purity hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Hattori, Masashi [Institute for Materials Chemistry and Engineering, Kyushu University, Kasuga 816-8580 (Japan); Noda, Kei, E-mail: nodakei@elec.keio.ac.jp [Department of Electronics and Electrical Engineering, Keio University, Hiyoshi, Yokohama 223-8522 (Japan)

2015-12-01

Graphical abstract: - Highlights: • A bilayer membrane composed of TiO{sub 2} nanotube array and palladium was fabricated. • The TiO{sub 2}/Pd bilayer membrane was prepared with an all-electrochemical process. • The membrane consists of pure Pd and anatase TiO{sub 2} nanotubes with no alloy formation. • Photocatalytic H{sub 2} production and concomitant separation were demonstrated. • High-purity H{sub 2} production rate and apparent quantum yield were evaluated. - Abstract: We developed an all-electrochemical technique for fabricating a bilayer structure of a titanium dioxide (TiO{sub 2}) nanotube array (TNA) and a palladium film (TNA/Pd membrane), which works for photocatalytic high-purity hydrogen production. Electroless plating was used for depositing the Pd film on the TNA surface prepared by anodizing a titanium foil. A 3-μm-thick TNA/Pd membrane without any pinholes in a 1.5-cm-diameter area was fabricated by transferring a 1-μm-thick TNA onto an electroless-plated 2-μm-thick Pd film with a mechanical peel-off process. This ultrathin membrane with sufficient mechanical robustness showed photocatalytic H{sub 2} production via methanol reforming under ultraviolet illumination on the TNA side, immediately followed by the purification of the generated H{sub 2} gas through the Pd layer. The hydrogen production rate and the apparent quantum yield for high-purity H{sub 2} production from methanol/water mixture with the TNA/Pd membrane were also examined. This work suggests that palladium electroless plating is more suitable and practical for preparing a well-organized TNA/Pd heterointerface than palladium sputter deposition.

Preparation of high-purity Pr{sup 3+} doped Ge–As–Se–In–I glasses for active mid-infrared optics

Energy Technology Data Exchange (ETDEWEB)

Karaksina, E.V.; Shiryaev, V.S., E-mail: shiryaev@ihps.nnov.ru; Kotereva, T.V.; Velmuzhov, A.P.; Ketkova, L.A.; Snopatin, G.E.

2016-09-15

The multi-stage method for the synthesis of high-purity Ge–As–Se–In–I glasses doped with Pr{sup 3+} ions is developed. It is based on the chemical distillation purification of glass-forming melt and the chemical transport reactions for purification and vacuum loading of indium. The level of purity of glasses, synthesized by this method, is higher in comparison with the traditional direct melting method for glass synthesis. The high-purity Pr{sup 3+}-doped Ge–As–Se–In and Pr{sup 3+}-doped Ge–As–Se–In–I glass samples are prepared; the optical, thermal and luminescent properties are investigated. The purest host glass samples, obtained by the multi-stage purification techniques, contain a low concentration of limiting impurities: hydrogen − ≤0.05 ppm (wt) and oxygen − ≤0.1 ppm (wt), that is, at present, the best result for multi-component chalcogenide glasses for mid-IR active fibers. The samples of Pr{sup 3+}-doped Ge–As–Se–In glass fibers have the minimum optical losses of 0.58 dB/m at the wavelength of 2.72 μm and exhibit an intense broadband luminescence in the spectral range of 3.5–5.5 μm, with a maximum shifted to longer wavelengths as compared with the bulk samples.

Si, Ge and SiGe wires for sensor application

International Nuclear Information System (INIS)

Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

2011-01-01

Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

Modelling of hydrogen permeability of membranes for high-purity hydrogen production

Science.gov (United States)

Zaika, Yury V.; Rodchenkova, Natalia I.

2017-11-01

High-purity hydrogen is required for clean energy and a variety of chemical technology processes. Different alloys, which may be well-suited for use in gas-separation plants, were investigated by measuring specific hydrogen permeability. One had to estimate the parameters of diffusion and sorption to numerically model the different scenarios and experimental conditions of the material usage (including extreme ones), and identify the limiting factors. This paper presents a nonlinear mathematical model taking into account the dynamics of sorption-desorption processes and reversible capture of diffusing hydrogen by inhomogeneity of the material’s structure, and also modification of the model when the transport rate is high. The results of numerical modelling allow to obtain information about output data sensitivity with respect to variations of the material’s hydrogen permeability parameters. Furthermore, it is possible to analyze the dynamics of concentrations and fluxes that cannot be measured directly. Experimental data for Ta77Nb23 and V85Ni15 alloys were used to test the model. This work is supported by the Russian Foundation for Basic Research (Project No. 15-01-00744).

Radio frequency and linearity performance of transistors using high-purity semiconducting carbon nanotubes.

Science.gov (United States)

Wang, Chuan; Badmaev, Alexander; Jooyaie, Alborz; Bao, Mingqiang; Wang, Kang L; Galatsis, Kosmas; Zhou, Chongwu

2011-05-24

This paper reports the radio frequency (RF) and linearity performance of transistors using high-purity semiconducting carbon nanotubes. High-density, uniform semiconducting nanotube networks are deposited at wafer scale using our APTES-assisted nanotube deposition technique, and RF transistors with channel lengths down to 500 nm are fabricated. We report on transistors exhibiting a cutoff frequency (f(t)) of 5 GHz and with maximum oscillation frequency (f(max)) of 1.5 GHz. Besides the cutoff frequency, the other important figure of merit for the RF transistors is the device linearity. For the first time, we report carbon nanotube RF transistor linearity metrics up to 1 GHz. Without the use of active probes to provide the high impedance termination, the measurement bandwidth is therefore not limited, and the linearity measurements can be conducted at the frequencies where the transistors are intended to be operating. We conclude that semiconducting nanotube-based transistors are potentially promising building blocks for highly linear RF electronics and circuit applications.

Fabrication high-purity Fe nanochains with near theoretical limit value of saturation magnetization of bulk Fe

Energy Technology Data Exchange (ETDEWEB)

Bian, Erkang [Henan University, Key Laboratory for Special Functional Materials of Ministry of Education (China); Xu, Yanling [Henan University, The Audit Department (China); Lou, Shiyun, E-mail: lousy@henu.edu.cn [Henan University, Key Laboratory for Special Functional Materials of Ministry of Education (China); Fu, Yunlong, E-mail: yunlongfu@dns.sxnu.edu.cn [Shanxi Normal University, School of Chemistry and Material Science (China); Zhou, Shaomin, E-mail: smzhou@henu.edu.cn [Henan University, Key Laboratory for Special Functional Materials of Ministry of Education (China)

2016-11-15

High-yield purity chain-like one-dimensional nanostructures consisting of single crystal Fe nanoparticles have been produced by using solution dispersion approach. Room temperature magnetic measurement shows that the as-fabricated Fe nanochains are ferromagnetic with a high saturation magnetization (203 emu/g) whereas the nanoparticles are single magnetic domains, which indicate that the as-synthesized products have superparamagnetism behavior with the saturation magnetization of about 28 emu/g. Maybe this results from the directional alignment of the nanoparticles. The excellent characteristic may have led to the potential applications in spin filtering, high density magnetic recording, and nanosensors.

Forbidden energy band gap in diluted a-Ge1−xSix:N films

International Nuclear Information System (INIS)

Guarneros, C.; Rebollo-Plata, B.; Lozada-Morales, R.; Espinosa-Rosales, J.E.; Portillo-Moreno, J.; Zelaya-Angel, O.

2012-01-01

By means of electron gun evaporation Ge 1−x Si x :N thin films, in the entire range 0 ≤ x ≤ 1, were prepared on Si (100) and glass substrates. The initial vacuum reached was 6.6 × 10 −4 Pa, then a pressure of 2.7 × 10 −2 Pa of high purity N 2 was introduced into the chamber. The deposition time was 4 min. Crucible-substrate distance was 18 cm. X-ray diffraction patterns indicate that all the films were amorphous (a-Ge 1−x Si x :N). The nitrogen concentration was of the order of 1 at% for all the films. From optical absorption spectra data and by using the Tauc method the energy band gap (E g ) was calculated. The Raman spectra only reveal the presence of Si-Si, Ge-Ge, and Si-Ge bonds. Nevertheless, infrared spectra demonstrate the existence of Si-N and Ge-N bonds. The forbidden energy band gap (E g ) as a function of x in the entire range 0 ≤ x ≤ 1 shows two well defined regions: 0 ≤ x ≤ 0.67 and 0.67 ≤ x ≤ 1, due to two different behaviors of the band gap, where for x > 0.67 exists an abruptly change of E g (x). In this case E g (x) versus x is different to the variation of E g in a-Ge 1−x Si x and a-Ge 1−x Si x :H. This fact can be related to the formation of Ge 3 N 4 and GeSi 2 N 4 when x ≤ 0.67, and to the formation of Si 3 N 4 and GeSi 2 N 4 for 0.67 ≤ x. - Highlights: ► Nitrogen doped amorphous Ge 1-x Si x thin films are grown by electron gun technique. ► Nitrogen atoms on E g of the a-Ge 1-x Si x films in the 0 £ x £ 1 range are analyzed. ► Variation in 0 £ x £ 1 range shows a warped change of E g in 1.0 – 3.6 eV range. ► The change in E g (x) behavior when x ∼ 0.67 was associated with Ge 2 SiN 4 presence.

Sensor locations and noise reduction in high-purity batch distillation control loops

Directory of Open Access Journals (Sweden)

Oisiovici R.M.

2000-01-01

Full Text Available The influence of the sensor locations on the composition control of high-purity batch distillation columns has been investigated. Using concepts of the nonlinear control theory, an input-output linearizing controller was implemented to keep the distillate composition constant at a desired value by varying the reflux ratio. An Extended Kalman Filter was developed to estimate the compositions required in the control algorithm using temperature measurements. In the presence of measurement noise, the control performance depended greatly on the sensor locations. Placing the sensors further from the top stages reduced the detrimental effects of noise but increased the inference error. To achieve accurate composition control, both noise reduction and composition estimate accuracy should be considered in the selection of the sensor locations.

Development of 77Ge/77As parent-daughter system for periodic removal of 77As for environmental sanitation and biochemical purposes

International Nuclear Information System (INIS)

Olah, Zita; Doczi, Rita; Szuecs, Zoltan; Varga, Zoltan

2015-01-01

A simple method was developed for the separation of radioactive 77 As from neutron irradiated natural GeO 2 samples for environmental and biochemical studies. The method is based on the volatility of GeCl 4 . The GeCl 4 was co-evaporated from the reaction mixture with an azeotropic mixture of HCl and water, and immediately condensed into a separate finger part of the special glass apparatus which was cooled by liquid nitrogen. By inverting the room temperature and the deep frozen parts of the glass equipment after three half-lives of the 77 Ge the separation process can be repetitive, getting a special type of 77 Ge/ 77 As parent-daughter system. The radionuclidic purity of the remaining As fraction was found to be 99.95%. Its yield, however, drastically decreased in the second and subsequent separations.

Aluminium. II - A review of deformation properties of high purity aluminium and dilute aluminium alloys.

Science.gov (United States)

Reed, R. P.

1972-01-01

The elastic and plastic deformation behavior of high-purity aluminum and of dilute aluminum alloys is reviewed. Reliable property data, including elastic moduli, elastic coefficients, tensile, creep, fatigue, hardness, and impact are presented. Single crystal tensile results are discussed. Rather comprehensive reference lists, containing publications of the past 20 years, are included for each of the above categories. Defect structures and mechanisms responsible for mechanical behavior are presented. Strengthening techniques (alloys, cold work, irradiation, quenching, composites) and recovery are briefly reviewed.

Analysis of the strain-aging phenomena in high purity niobium: competition between hardening and recovery

International Nuclear Information System (INIS)

Andreone, C.; Cizeron, G.; Larere, A.

1981-01-01

The strain-aging phenomena in high purity niobium were studied using tensile tests. Four parameters were considered which characterize the yield point, the permanent hardening, the recovery and the apparent yield stress. Five successive steps can be distinguished from the changes in these parameters with changes in the aging temperature. The detailed analysis of the phenomena involved concerns mainly the locking of dislocations by first- and second-type segregations and the opposite effect of reorganization of the dislocation network. (Auth.)

Cross Purposes: Love and Purity at a Puerto Rican Protestant High School

Science.gov (United States)

Seale-Collazo, James

2013-01-01

A "native" Christian ethnographer finds religious education at this church-sponsored school to pursue two distinct, and occasionally conflicting, curricula: "love" and "purity." The curriculum of love draws on what Turner called liminality and communitas in an effort to promote spiritual "encounters with…

Sorption-enhanced water gas shift reaction for high-purity hydrogen production: Application of a Na-Mg double salt-based sorbent and the divided section packing concept

International Nuclear Information System (INIS)

Lee, Chan Hyun; Lee, Ki Bong

2017-01-01

Highlights: •Na-Mg double salt-based sorbent was used for high-temperature CO 2 sorption. •Divided section packing concept was applied to the SE-WGS reaction. •High-purity H 2 was produced from the SE-WGS reaction with divided section packing. •High-purity H 2 productivity could be further enhanced by modifying packing method. -- Abstract: Hydrogen is considered a promising environmentally benign energy carrier because it has high energy density and produces no pollutants when it is converted into other types of energy. The sorption-enhanced water gas shift (SE-WGS) reaction, where the catalytic WGS reaction and byproduct CO 2 removal are carried out simultaneously in a single reactor, has received considerable attention as a novel method for high-purity hydrogen production. Since the high-purity hydrogen productivity of the SE-WGS reaction is largely dependent on the performance of the CO 2 sorbent, the development of sorbents having high CO 2 sorption capacity is crucial. Recently, a Na-Mg double salt-based sorbent has been considered for high-temperature CO 2 capture since it has been reported to have a high sorption capacity and fast sorption kinetics. In this study, the SE-WGS reaction was experimentally demonstrated using a commercial catalyst and a Na-Mg double salt-based sorbent. However, the SE-WGS reaction with a one-body hybrid solid, a physical admixture of catalyst and sorbent, showed poor reactivity and reduced CO 2 sorption uptake. As a result, a divided section packing concept was suggested as a solution. In the divided section packing method, the degree of mixing for the catalyst and sorbent in a column can be controlled by the number of sections. High-purity hydrogen (<10 ppm CO) was produced directly from the SE-WGS reaction with divided section packing, and the hydrogen productivity was further improved when the reactor column was divided into more sections and packed with more sorbent.

The determination of minor amounts of rare earth elements in high purity earth oxides by HPLC/IDMS

International Nuclear Information System (INIS)

Stijfhoorn, D.E.; Stray, H.; Hjelmseth, H.

1991-05-01

Since the early seventies isotopic dilution mass spectrometry (IDMS) has been used at Institutt for energiteknikk, Kjeller, Norway for determination and certification of rare earth elements in high purity Y 2 O 3 . These lanthanides have, during the last few decades, become more widely used in highly specialized technology. High purity, quality 4 N (99.99%) or even 5 N materials are needed for phosphors, lasers, optical fibers, X-ray films, and in contrast fluids for magnetic resonance imaging (MRI). However, in a matrix constisting primarily of a single lanthanide, IDMS alone will not be effective due to isobaric interferences from the main elements or the mono-oxides formed in the ion source. On the other hand, high performance liquid chromatography (HPLC) may be used, but the detection limit will be in the order of 5 to 10 ppm/W. In this work a combination of HPLC and IDMS has been used to lower the detection limit to 1 ppm/W, where the sample is spiked before separation by HPLC, followed by IDMS analysis of the HPLC- fractions. In some cases the HPLC-process has to be repeated to remove the main element completly. Results are presented for Dy 2 O 3 and Nd 2 O 3 , but similar separating procedures can be applied for other rare earth oxides. 3 refs., 2 figs. 2 tabs

Ge{sub 1−x}Si{sub x} on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

Energy Technology Data Exchange (ETDEWEB)

Lee, Chang-Chun, E-mail: changchunlee@cycu.edu.tw [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Hsieh, Chia-Ping [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China); Huang, Pei-Chen; Cheng, Sen-Wen [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Liao, Ming-Han [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China)

2016-03-01

The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge{sub 1−x}Si{sub x} alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge{sub 1−x}Si{sub x} alloys, namely, Ge{sub 0.96}Si{sub 0.04}, Ge{sub 0.93}Si{sub 0.07}, and Ge{sub 0.86}Si{sub 0.14}, are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge{sub 1−x}Si{sub x} alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge{sub 0.86}Si{sub 0.14} stressor within the device channel. Furthermore, the stresses (S{sub yy}) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge{sub 1−x}Si{sub x} alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n

Purity and adulterant analysis of crack seizures in Brazil.

Science.gov (United States)

Fukushima, André R; Carvalho, Virginia M; Carvalho, Débora G; Diaz, Ernesto; Bustillos, Jose Oscar William Vega; Spinosa, Helenice de S; Chasin, Alice A M

2014-10-01

Cocaine represents a serious problem to society. Smoked cocaine is very addictive and it is frequently associated with violence and health issues. Knowledge of the purity and adulterants present in seized cocaine, as well as variations in drug characteristics are useful to identify drug source and estimate health impact. No data are available regarding smoked cocaine composition in most countries, and the smoked form is increasing in the Brazilian market. The purpose of the present study is to contribute to the current knowledge on the status of crack cocaine seized samples on the illicit market by the police of São Paulo. Thus, 404 samples obtained from street seizures conducted by the police were examined. The specimens were macroscopically characterized by color, form, odor, purity, and adulterant type, as well as smoke composition. Samples were screened for cocaine using modified Scott test and thin-layer chromatographic (TLC) technique. Analyses of purity and adulterants were performed with gas chromatography equipped with flame ionization detector (GC-FID). Additionally, smoke composition was analyzed by GC-mass spectrometry (MS), after samples burning. Samples showed different colors and forms, the majority of which is yellow (74.0%) or white (20.0%). Samples free of adulterants represented 76.3% of the total. Mean purity of the analyzed drug was 71.3%. Crack cocaine presented no correlations between macroscopic characteristics and purity. Smoke analysis showed compounds found also in the degradation of diesel and gasoline. Therefore, the drug marketed as crack cocaine in São Paulo has similar characteristics to coca paste. High purity can represent a greater risk of dependency and smoke compounds are possibly worsening drug health impact. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

Aqueous Binder Enhanced High-Performance GeP5 Anode for Lithium-Ion Batteries

Directory of Open Access Journals (Sweden)

Jun He

2018-02-01

Full Text Available GeP5 is a recently reported new anode material for lithium ion batteries (LIBs, it holds a large theoretical capacity about 2300 mAh g−1, and a high rate capability due to its bi-active components and superior conductivity. However, it undergoes a large volume change during its electrochemical alloying and de-alloying with Li, a suitable binder is necessary to stable the electrode integrity for improving cycle performance. In this work, we tried to apply aqueous binders LiPAA and NaCMC to GeP5 anode, and compared the difference in electrochemical performance between them and traditional binder PVDF. As can be seen from the test result, GeP5 can keep stable in both common organic solvents and proton solvents such as water and alcohol solvents, it meets the application requirements of aqueous binders. The electrochemistry results show that the use of LiPAA binder can significantly improve the initial Coulombic efficiency, reversible capacity, and cyclability of GeP5 anode as compared to the electrodes based on NaCMC and PVDF binders. The enhanced electrochemical performance of GeP5 electrode with LiPAA binder can be ascribed to the unique high strength long chain polymer structure of LiPAA, which also provide numerous uniform distributed carboxyl groups to form strong ester groups with active materials and copper current collector. Benefit from that, the GeP5 electrode with LiPAA can also exhibit excellent rate capability, and even at low temperature, it still shows attractive electrochemical performance.

Determination of uranium in natural waters and high-purity aluminum by flow-injection on-line preconcentration and ICP-MS detection

International Nuclear Information System (INIS)

Seki, Tatsuya; Oguma, Koichi

2004-01-01

A flow injection method has been developed for the determination of uranium is natural waters and high-purity aluminum by use of on-line preconcentration on a U/TEVA TM column and ICP-MS detection. The sample solution prepared as a nitric acid solution in 3 mol l -1 was passed through the U/TEVA TM column to collect uranium and uranium adsorbed was eluted with 0.1 mol l -1 nitric acid. The effluent was introduced directly into the nebulizer of the ICP-MS and 238 U was measured. The detection limit, calculated as 3-times the standard deviation of the background noise, was 3pg and the sample throughput was about 10 per hour. The proposed method was successfully applied to the determination of uranium in river-water reference materials, a seawater reference material and high-purity aluminum reference materials. (author)

Development of a facility for the recovery of high-purity hydrogen from coke oven gas by pressure swing adsorption

Energy Technology Data Exchange (ETDEWEB)

Nakamura, M; Saida, K; Uenoyama, K; Sugishita, M; Imokawa, K

1985-01-01

This paper reports 1) a pressure swing adsorption (PSA) system comprising three towers, each packed with three different adsorbents; and 2) studies of the application of this system to the recovery of high-purity hydrogen from coke oven gas. Running the adsorption plant at 35 C and 9.5 kg/cm/sup 2/ gives optimum operating stability and economy. In addition, an optimum time cycle for the three-tower system has been developed. Gas from the PSA equipment proper still contains traces of oxygen. This is removed in a further tower packed with Pd catalyst. The ultimate recovery of hydrogen is closely related to its concentration in the raw coke oven gas and to the degree of purity attained. 3 references.

Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure

International Nuclear Information System (INIS)

Yuan, C L; Lee, P S

2008-01-01

A Ge/GeO 2 core/shell nanostructure embedded in an Al 2 O 3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO 2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO 2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering

Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.

Science.gov (United States)

Yuan, C L; Lee, P S

2008-09-03

A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

Synthesis and characterization of Ge–Cr-based intermetallic compounds: GeCr3, GeCCr3, and GeNCr3

International Nuclear Information System (INIS)

Lin, S.; Tong, P.; Wang, B.S.; Huang, Y.N.; Song, W.H.; Sun, Y.P.

2014-01-01

Highlights: • Polycrystalline samples of GeCr 3 , GeCCr 3 , and GeNCr 3 are synthesized by using solid state reaction method. • A good quality of our samples is verified by the Rietveld refinement and electrical transport measurement. • We present a comprehensive understanding of physical properties of GeCr 3 , GeCCr 3 , and GeNCr 3 . -- Abstract: We report the synthesis of GeCr 3 , GeCCr 3 , and GeNCr 3 polycrystalline compounds, and present a systematic study of this series by the measurements of X-ray diffraction (XRD), magnetism, electrical/thermal transport, specific heat, and Hall coefficient. Good quality of our samples is verified by quite small value of residual resistivity and considerably large residual resistivity ratio. Based on the Rietveld refinement of XRD data, the crystallographic parameters are obtained, and, correspondingly, the sketches of crystal structure are plotted for all the samples. The ground states of GeCr 3 , GeCCr 3 , and GeNCr 3 are paramagnetic/antiferromagnetic metal, and even a Fermi-liquid behavior is observed in electrical transport at low temperatures. Furthermore, the analysis of the thermal conductivity data suggests the electron thermal conductivity plays a major role in total thermal conductivity for GeCr 3 at low temperatures, while the phonon thermal conductivity is dominant for GeCCr 3 and GeNCr 3 at high temperatures. The negative value of Seebeck coefficient and Hall coefficient indicate that the charge carriers are electron-type for GeCr 3 , GeCCr 3 , and GeNCr 3

Search for neutrinoless double beta decay of Ge-76 with the GERmanium Detector Array '' GERDA ''

International Nuclear Information System (INIS)

Brugnera, R.

2009-01-01

The study of neutrinoless double beta decay (DBD) is the most powerful approach to the fundamental question if the neutrino is a Majorana particle, i.e. its own anti-particle. The observation of neutrinoless DBD would not only establish the Majorana nature of the neutrino but also represent a determination of its effective mass if the nuclear matrix element is given. So far, the most sensitive results have been obtained with Ge-76, and the group of Klapdor-Kleingrothaus has made a claim of discovery. Future experiments have to reduce radioactive backgrounds to increase the sensitivity. '' GERDA '' is a new double beta-decay experiment which is currently under construction in the INFN Gran Sasso National Laboratory, Italy. It is implementing a new shielding concept by operating bare Ge diodes - enriched in Ge-76 - in high purity liquid argon supplemented by a water shield. The aim of '' GERDA '' is to verify or refute the recent claim of discovery, and, in a second phase, to achieve a two orders of magnitude lower background index than recent experiments, increasing the sensitive mass and reaching exposure of 100 kg yr. It be will discuss design, physics reach, and status of construction of '' GERDA '', and present results from various R efforts including long term stability of bare Ge diodes in cryogenic liquids, material screening, cryostat performance, detector segmentation, cryogenic precision electronics, safety aspects, and Monte Carlo simulations. (author)

Abridged acid-base wet-milling synthesis of high purity hydroyapatite

Directory of Open Access Journals (Sweden)

Sandi Carolina Ruiz-Mendoza

2008-06-01

Full Text Available There is a plethora of routes to produce hydroxyapatite(HA and in general calcium phosphates(CP but production usually leads to a mixture of several phases. Besides ionic contamination, most of these methods are cumbersome, restricted to small volumes of product and require a lot of thermal energy. The acid-base route eliminates foreign ions or additives and its only byproduct is water. Heterogeneous reaction drawback is that solid reactants do not easily come in contact with each other and therefore addition and stirring times become very lengthy and still the product is a mixture. The synthesis started from calcium hydroxide and phosphoric acid (PA. Ball milling was used to favor kinetics and stoichiometry. Six sets of PA addition, paddle stirring and ball milling times were used. Products were evaluated by X ray diffraction (XRD, Fourier Transform Infrared (FTIR, scanning electron microscopy (SEM, X ray fluorescence (XRF and Ca/P ratio. Chemical analysis for calcium proceeded through oxalate precipitate and phosphorus by the phosphomolibdate technique. A set of conditions yielding high purity HA was established.

Multicurie, transportable, integrally shielded 123Xe → 123I generator and processing system for high-purity iodine-123 production

International Nuclear Information System (INIS)

Lagunas-Solar, M.C.; Thibeau, H.L.; Goodart, C.E.; Little, F.E.; Navarro, N.J.; Hartnett, D.E.

1985-01-01

An integrally shielded 123 Xe → 123 I generator system has been designed and tested under production conditions for its suitability as a multicurie handling device from which to produce radiopharmaceutical-quality high-purity no-carrier-added (NCA) 123 I. The 123 Xe → 123 I generator system is expected to provide an alternative to current techniques and to increase the availability and reliability of high-purity 123 I made via the 127 I(p,5n) 123 Xe → 123 I nuclear reaction. The generator system is based on the Crocker Nuclear Laboratory's continuous-flow production system which has been operating since 1974 for the multicurie production of 123 I. The generator system, which consists of an integrally shielded xenon trap and separate loading and processing apparatuses, is simple and reliable to operate, can be adapted to computerized control, and provides a safe working environment for the repeated handling of multicurie amounts of Xe-I radioactivities

Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

International Nuclear Information System (INIS)

Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

2000-01-01

The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

Computers in the investigation of the impurity content of high-purity materials

International Nuclear Information System (INIS)

Makarov, Yu.B.; Yan'kov, S.V.

1987-01-01

The efficiency of the concept of data banks for the accumulation and processing of information is now generally acknowledged. In scientific investigations not only bibliographic but also factual data banks are becoming more and more prevalent. In this article, the authors consider the possibilities of providing a data bank on high-purity materials for the study of impurity contents. Also in this paper, the authors distinguish the following groups of problems that arise in the study of impurity composition and presents examples of their proposed solutions to these problems: the analysis of error and the determination of the most probably value of impurity concentration; the estimation of average properties of impurity composition with respect to groups of impurities and samples, and the forecast of the complete impurity composition

High thermoelectric potential of Bi{sub 2}Te{sub 3} alloyed GeTe-rich phases

Energy Technology Data Exchange (ETDEWEB)

Madar, Naor; Givon, Tom; Mogilyansky, Dmitry; Gelbstein, Yaniv [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel)

2016-07-21

In an attempt to reduce our reliance on fossil fuels, associated with severe environmental effects, the current research is focused on the identification of the thermoelectric potential of p-type (GeTe){sub 1−x}(Bi{sub 2}Te{sub 3}){sub x} alloys, with x values of up to 20%. Higher solubility limit of Bi{sub 2}Te{sub 3} in GeTe, than previously reported, was identified around ∼9%, extending the doping potential of GeTe by the Bi{sub 2}Te{sub 3} donor dopant, for an effective compensation of the high inherent hole concentration of GeTe toward thermoelectrically optimal values. Around the solubility limit of 9%, an electronic optimization resulted in an impressive maximal thermoelectric figure of merit, ZT, of ∼1.55 at ∼410 °C, which is one of the highest ever reported for any p-type GeTe-rich alloys. Beyond the solubility limit, a Fermi Level Pinning effect of stabilizing the Seebeck coefficient was observed in the x = 12%–17% range, leading to stabilization of the maximal ZTs over an extended temperature range; an effect that was associated with the potential of the governed highly symmetric Ge{sub 8}Bi{sub 2}Te{sub 11} and Ge{sub 4}Bi{sub 2}Te{sub 7} phases to create high valence band degeneracy with several bands and multiple hole pockets on the Fermi surface. At this compositional range, co-doping with additional dopants, creating shallow impurity levels (in contrast to the deep lying level created by Bi{sub 2}Te{sub 3}), was suggested for further electronic optimization of the thermoelectric properties.

Quantitative influence of minor and impurity elements on hot cracking susceptibility of extra high-purity type 310 stainless steel

International Nuclear Information System (INIS)

Saida, Kazuyoshi; Matsushita, Hideki; Nishimoto, Kazutoshi; Kiuchi, Kiyoshi; Nakayama, Junpei

2013-01-01

To evaluate the influence of minor and impurity elements such as C, Mn, P and S on the solidification and ductility-dip cracking susceptibilities of extra high-purity type 310 stainless steels, the transverse-Varestraint test was conducted by using several type 310 stainless steels with different amounts of C, Mn, P and S. Two types of hot cracks occurred in these steels by Varestraint test; solidification and ductility-dip cracks. The solidification cracking susceptibility was significantly reduced as the amounts of C, P and S decreased. The ductility-dip cracking susceptibility also reduced with a decrease in P and S contents. It adversely, however, increased as the C content of the steels was reduced. Mn didn't greatly affect the hot cracking susceptibility of the extra high-purity steels. The characteristic influence on solidification cracking was the ratio of P:S:C=1:1.3:0.56, while Mn negligibly ameliorated solidification cracking in the extra low S (and P) steels. The numerical analysis on the solidification brittle temperature range (BTR) revealed that the reduced solidification cracking susceptibility with decreasing the amounts of C, P and S in steel could be attributed to the reduced BTR due to the suppression of solidification segregation of minor and impurity elements in the finally solidified liquid film between dendrites. On the other hand, a molecular orbital analysis to estimate the binding strength of the grain boundary suggested that the increased ductility-dip cracking susceptibility in extra high-purity steels was caused by grain boundary embrittlement due to the refining of beneficial elements for grain boundary strengthening such as C. (author)

Multiple collision effects on the antiproton production by high energy proton (100 GeV - 1000 GeV)

International Nuclear Information System (INIS)

Takahashi, Hiroshi; Powell, J.

1987-01-01

Antiproton production rates which take into account multiple collision are calculated using a simple model. Methods to reduce capture of the produced antiprotons by the target are discussed, including geometry of target and the use of a high intensity laser. Antiproton production increases substantially above 150 GeV proton incident energy. The yield increases almost linearly with incident energy, alleviating space charge problems in the high current accelerator that produces large amounts of antiprotons

The probability distribution of intergranular stress corrosion cracking life for sensitized 304 stainless steels in high temperature, high purity water

International Nuclear Information System (INIS)

Akashi, Masatsune; Kenjyo, Takao; Matsukura, Shinji; Kawamoto, Teruaki

1984-01-01

In order to discuss the probability distribution of intergranular stress corrsion carcking life for sensitized 304 stainless steels, a series of the creviced bent beem (CBB) and the uni-axial constant load tests were carried out in oxygenated high temperature, high purity water. The following concludions were resulted; (1) The initiation process of intergranular stress corrosion cracking has been assumed to be approximated by the Poisson stochastic process, based on the CBB test results. (2) The probability distribution of intergranular stress corrosion cracking life may consequently be approximated by the exponential probability distribution. (3) The experimental data could be fitted to the exponential probability distribution. (author)

High-pressure EXAFS study of vitreous GeO2 up to 44 GPa

International Nuclear Information System (INIS)

Baldini, M.; Aquilanti, G.; Mao, H-k.; Yang, W.; Shen, G.; Pascarelli, S.; Mao, W. L.

2010-01-01

High-pressure extended x-ray absorption fine-structure measurements were performed on amorphous GeO 2 over increasing and decreasing pressure cycles at pressures up to 44 GPa. Several structural models based on crystalline phases with fourfold, fivefold, and sixfold coordination were used to fit the Ge-O first shell. The Ge-O bond lengths gradually increased up to 30 GPa. Three different pressure regimes were identified in the pressure evolution of the Ge-O bond distances. Below 13 GPa, the local structure was well described by a fourfold 'quartzlike' model whereas a disordered region formed by a mixture of four- and five-coordinated germanium-centered polyhedra was observed in the intermediate pressure range between 13 and 30 GPa. Above 30 GPa the structural transition to the maximum coordination could be considered complete. The present results shed light on the GeO 2 densification process and on the nature of the amorphous-amorphous transition, suggesting that the transition is more gradual and continuous than what has been previously reported.

Ge-Au eutectic bonding of Ge (100) single crystals

International Nuclear Information System (INIS)

Knowlton, W.B.; Beeman, J.W.; Emes, J.H.; Loretto, D.; Itoh, K.M.; Haller, E.E.

1993-01-01

The author present preliminary results on the eutectic bonding between two (100) Ge single crystal surfaces using thin films of Au ranging from 900 angstrom/surface to 300 angstrom/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500 angstrom/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300 angstrom/surface Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200 angstrom/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150 angstrom across an interval of lmm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons

Analysis of the Purity of Cetrimide by Titrations

DEFF Research Database (Denmark)

Andersen, Jens Enevold Thaulov; Rasmussen, Claus/Dallerup; Nielsen, Hans/Boye

2006-01-01

. Titration by perchloric acid showed a 99.69 ± 0.05 % purity of cetrimide and titration by silver nitrate showed a 99.85% ± 0.05 % purity while the traditional assay method predicted a purity of only 97.1 ± 0.4. It was found that the discrepancy could be identified as differences in selectivity during...

Formation and evolution of tweed structures on high-purity aluminum polycrystalline foils under cyclic tension

International Nuclear Information System (INIS)

Kuznetsov, P. V.; Vlasov, I. V.; Sklyarova, E. A.; Smekalina, T. V.

2015-01-01

Peculiarities of formation and evolution of tweed structures on the surface of high-purity aluminum polycrystalline foils under cyclic tension were studied using an atom force microscope and a white light interferometer. Tweed structures of micron and submicron sizes were found on the foils at different number of cycles. In the range of 42,000 < N < 95,000 cycles destruction of tweed patterns is observed, which leads to their disappearance from the surface of the foils. Formation of tweed structures of various scales is discussed in terms of the Grinfeld instability

Calibration of Single High Purity Germanium Detector for Whole Body Counter

International Nuclear Information System (INIS)

Taha, T.M.; Morsi, T.M.

2009-01-01

A new Accuscan II single germanium detector for whole body counter was installed in NRC (Egypt). The current paper concerned on calibration of single high purity germanium detector for whole body counter. Physical parameters affecting on performance of whole body counter such as linearity, minimum detectable activity and source detector distance, SDD were investigated. Counting efficiencies for the detector have been investigated in rear wall, fixed diagnostic position in air. Counting efficiencies for organ compartments such as thyroid, lung, upper and lower gastrointestinal tract have been investigated using transfer phantom in fixed diagnostic and screening positions respectively. The organ compartment efficiencies in screening geometry were higher than that value of diagnostic geometry by a factor of three. The committed dose equivalents of I-131 in thyroid were ranged from 0.073 ± 0.004 to 1.73±0.09 mSv and in lung was 0.02±0.001 mSv

High temperature XRD of Cu2GeSe3

International Nuclear Information System (INIS)

Premkumar, D. S.; Malar, P.; Chetty, Raju; Mallik, Ramesh Chandra

2015-01-01

The Cu 2 GeSe 3 is prepared by solid state synthesis method. The high temperature XRD has been done at different temperature from 30 °C to 450 °C. The reitveld refinement confirms Cu 2 GeSe 3 phase and orthorhombic crystal structure. The lattice constants are increasing with increase in the temperature and their rate of increase with respect to temperature are used for finding the thermal expansion coefficient. The calculation of the linear and volume coefficient of thermal expansion is done from 30 °C to 400 °C. Decrease in the values of linear expansion coefficients with temperature are observed along a and c axis. Since thermal expansion coefficient is the consequence of the distortion of atoms in the lattice; this can be further used to find the minimum lattice thermal conductivity at given temperature

Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

Science.gov (United States)

Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

2012-02-01

High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

Characterization of high-purity niobium structures fabricated using the electron beam melting process

Science.gov (United States)

Terrazas Najera, Cesar Adrian

Additive Manufacturing (AM) refers to the varied set of technologies utilized for the fabrication of complex 3D components from digital data in a layer-by-layer fashion. The use of these technologies promises to revolutionize the manufacturing industry. The electron beam melting (EBM) process has been utilized for the fabrication of fully dense near-net-shape components from various metallic materials. This process, catalogued as a powder bed fusion technology, consists of the deposition of thin layers (50 - 120microm) of metallic powder particles which are fused by the use of a high energy electron beam and has been commercialized by Swedish company Arcam AB. Superconducting radio frequency (SRF) cavities are key components that are used in linear accelerators and other light sources for studies of elemental physics. Currently, cavity fabrication is done by employing different forming processes including deep-drawing and spinning. In both of the latter techniques, a feedstock high-purity niobium sheet with a thickness ranging from 3-4 mm is mechanically deformed and shaped into the desired geometry. In this manner, half cavities are formed that are later joined by electron beam welding (EBW). The welding step causes variability in the shape of the cavity and can also introduce impurities at the surface of the weld interface. The processing route and the purity of niobium are also of utmost importance since the presence of impurities such as inclusions or defects can be detrimental for the SRF properties of cavities. The focus of this research was the use of the EBM process in the manufacture of high purity niobium parts with potential SRF applications. Reactor grade niobium was plasma atomized and used as the precursor material for fabrication using EBM. An Arcam A2 system was utilized for the fabrication. The system had all internal components of the fabrication chamber replaced and was cleaned to prevent contamination of niobium powder. A mini-vat, developed at

Outstanding laser damage threshold in Li2MnGeS4 and tunable optical nonlinearity in diamond-like semiconductors.

Science.gov (United States)

Brant, Jacilynn A; Clark, Daniel J; Kim, Yong Soo; Jang, Joon I; Weiland, Ashley; Aitken, Jennifer A

2015-03-16

The new Li2MnGeS4 and Li2CoSnS4 compounds result from employing a rational and simple design strategy that guides the discovery of diamond-like semiconductors (DLSs) with wide regions of optical transparency, high laser damage threshold, and efficient second-order optical nonlinearity. Single-crystal X-ray diffraction was used to solve and refine the crystal structures of Li2MnGeS4 and Li2CoSnS4, which crystallize in the noncentrosymmetric space groups Pna21 and Pn, respectively. Synchrotron X-ray powder diffraction (SXRPD) was used to assess the phase purity, and diffuse reflectance UV-vis-NIR spectroscopy was used to estimate the bandgaps of Li2MnGeS4 (Eg = 3.069(3) eV) and Li2CoSnS4 (Eg = 2.421(3) eV). In comparison with Li2FeGeS4, Li2FeSnS4, and Li2CoSnS4 DLSs, Li2MnGeS4 exhibits the widest region of optical transparency (0.60-25 μm) and phase matchability (≥1.6 μm). All four of the DLSs exhibit second-harmonic generation and are compared with the benchmark NLO material, AgGaSe2. Most remarkably, Li2MnGeS4 does not undergo two- or three-photon absorption upon exposure to a fundamental Nd:YAG beam (λ = 1.064 μm) and exhibits a laser damage threshold > 16 GW/cm(2).

Monitoring the Microbial Purity of the Treated Water and Dialysate

Directory of Open Access Journals (Sweden)

Canaud Bernard

2001-01-01

Full Text Available Dialysate purity has become a major concern in recent years since it has been proven that contamination of dialysate is able to induce the production of proinflammatory cytokines, putatively implicated in the development of dialysis related pathology. In order to reduce this risk, it is advised to use ultrapure dialysate as a new standard of dialysate purity. Ultrapure dialysate preparation may be easily achieved with modern water treatment technologies. The reliable production of ultrapure dialysate requires several prerequisites: use of ultrapure water, use of clean electrolytic concentrates, implementation of ultrafilters in the dialysate pathway to ensure cold sterilization of the fresh dialysate. The regular supply with such high-grade purity dialysate relies on predefined microbiological monitoring of the chain using adequate and sensitive methods, and hygienic handling including frequent disinfection to reduce the level of contamination and to prevent biofilm formation. Reliability of this process requires compliance with a very strict quality assurance process. In this paper, we summarized the principles of the dialysate purity monitoring and the criteria used for surveillance in order to establish good antimicrobial practices in dialysis.

Preparation of High-purity Indium Oxalate Salt from Indium Scrap by Organic Acids

International Nuclear Information System (INIS)

Koo, Su-Jin; Ju, Chang-Sik

2013-01-01

Effect of organic acid on the preparation of indium-oxalate salt from indium scraps generated from ITO glass manufacturing process was studied. Effects of parameters, such as type and concentration of organic acids, pH of reactant, temperature, reaction time on indium-oxalate salt preparation were examined. The impurity removal efficiency was similar for both oxalic acid and citric acid, but citric acid did not make organic acid salt with indium. The optimum conditions were 1.5 M oxalic acid, pH 7, 80 .deg. C, and 6 hours. On the other hand, the recoveries increased with pH, but the purity decreased. The indium-oxalate salt purity prepared by two cycles was 99.995% (4N5). The indium-oxalate salt could be converted to indium oxide and indium metal by substitution reaction and calcination

High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts.

Science.gov (United States)

Burchhart, T; Zeiner, C; Hyun, Y J; Lugstein, A; Hochleitner, G; Bertagnolli, E

2010-10-29

Ge nanowires (NWs) about 2 µm long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH(4) as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu(3)Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga(+) implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.

High spin levels in 66Ga, 68Ga, 70Ga and 68Ge, 70Ge, 72Ge via fusion evaporation reactions induced by α-particles

International Nuclear Information System (INIS)

Morand, C.

1979-01-01

The high spin (J 70 Ga all the members (except the 3 - one) of the (πpsub(3/2), νgsub(9/2)) configuration have been identified, in addition with the (πfsub(5/2), νgsub(9/2))sub(7 - ) and (πgsub(9/2), νgsub(9/2))sub(9 + ) states. In 66 Ga and 68 Ga most of the levels with J>7 ca be described as a result of maximum coupling of a gsub(9/2) neutron with the odd Ga core. Thus the (πgsub(9/2), νgsub(9/2))sub(9 + ) states have been safely located. In the same way the even Ge, the backbending effect at the Jsup(π)=8 + state is less and less pronouced from the 68 Ge to the 72 Ge; that can be explained by the (νgsub(9/2)) 2 sub(8 + ) configuration of this state, so that the 8 + →6 + γ-transition is more and more allowed with increasing N, i.e. as the νgsub(9/2) shell acts more and more in the lower yrast levels Jsup(π)=0 + , 2 + , 4 + , 6 + configurations [fr

Preparation of high purity nickel film from industrial effluent by the distribution of charge over microelectrodes using newly designed free electrolytic diffusion approach

International Nuclear Information System (INIS)

Ahmed, Sheikh Asrar; Qadir, Muhammad Abdul; Zafar, Muhammad Nadeem; Hussain, Ishtiaq; Tufail, Shahid; Rashid, Saima; Shah, Hamid Ali

2008-01-01

The present work deals with the development of a newly designed free electrolytic diffusion approach (the distribution of charge over microelectrodes) for the purification of metals and was successfully applied for the purification of nickel from the industrial effluent containing high proportion of nickel. Atomic absorption spectrophotometer (AAS) analyzed the purified nickel deposited on working microelectrodes. The results obtained show that the purity of nickel was enhanced from 95% to 99.9% with traces of copper etc. It was concluded that distribution of charge over the microcathodes at a rate of 50 cycles per second (cps) shows better results for the production of high purity (HP) nickel as compared to 25 cycles per second (cps)

Preparation of high purity nickel film from industrial effluent by the distribution of charge over microelectrodes using newly designed free electrolytic diffusion approach

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Sheikh Asrar; Qadir, Muhammad Abdul [Institute of Chemistry, University of the Punjab, Lahore, 54590 (Pakistan); Zafar, Muhammad Nadeem [Institute of Chemistry, University of the Punjab, Lahore, 54590 (Pakistan)], E-mail: znadeempk@yahoo.com; Hussain, Ishtiaq [Institute of Chemistry, University of the Punjab, Lahore, 54590 (Pakistan); Tufail, Shahid [PCSIR Laboratories Complex, Feroz pur Road, Lahore (Pakistan); Rashid, Saima; Shah, Hamid Ali [Institute of Chemistry, University of the Punjab, Lahore, 54590 (Pakistan)

2008-09-15

The present work deals with the development of a newly designed free electrolytic diffusion approach (the distribution of charge over microelectrodes) for the purification of metals and was successfully applied for the purification of nickel from the industrial effluent containing high proportion of nickel. Atomic absorption spectrophotometer (AAS) analyzed the purified nickel deposited on working microelectrodes. The results obtained show that the purity of nickel was enhanced from 95% to 99.9% with traces of copper etc. It was concluded that distribution of charge over the microcathodes at a rate of 50 cycles per second (cps) shows better results for the production of high purity (HP) nickel as compared to 25 cycles per second (cps)

High polarization purity operation of 99% in 9xx-nm broad stripe laser diodes

Science.gov (United States)

Morohashi, Rintaro; Yamagata, Yuji; Kaifuchi, Yoshikazu; Tada, Katsuhisa; Nogawa, Ryozaburo; Yamada, Yumi; Yamaguchi, Masayuki

2018-02-01

Polarization characteristics of self-aligned stripe (SAS) laser diodes (LDs) and Ridge-LDs are investigated to realize highly efficient polarization beam combined (PBC) LD modules. Vertical layers of both lasers are designed identically. Near field patterns (NFP) of TM polarization for the Ridge-LD showed peaks at the side edges, as expected by the strain simulation. On the other hand, SAS-LD showed a relatively flat and weak profile. Polarization purity (ITE/ (ITE+ITM)) of SAS-LDs exceeds 99%, while those of the Ridge-LDs are as low as 96%. It is confirmed that our SAS-LDs are suitable sources for PBC with low power loss.

Germanium recovery from gasification fly ash: evaluation of end-products obtained by precipitation methods.

Science.gov (United States)

Arroyo, Fátima; Font, Oriol; Fernández-Pereira, Constantino; Querol, Xavier; Juan, Roberto; Ruiz, Carmen; Coca, Pilar

2009-08-15

In this study the purity of the germanium end-products obtained by two different precipitation methods carried out on germanium-bearing solutions was evaluated as a last step of a hydrometallurgy process for the recovery of this valuable element from the Puertollano Integrated Gasification Combined Cycle (IGCC) fly ash. Since H(2)S is produced as a by-product in the gas cleaning system of the Puertollano IGCC plant, precipitation of germanium as GeS(2) was tested by sulfiding the Ge-bearing solutions. The technological and hazardous issues that surround H(2)S handling conducted to investigate a novel precipitation procedure: precipitation as an organic complex by adding 1,2-dihydroxy benzene pyrocatechol (CAT) and cetyltrimethylammonium bromide (CTAB) to the Ge-bearing solutions. Relatively high purity Ge end-products (90 and 93% hexagonal-GeO(2) purity, respectively) were obtained by precipitating Ge from enriched solutions, as GeS(2) sulfiding the solutions with H(2)S, or as organic complex with CAT/CTAB mixtures and subsequent roasting of the precipitates. Both methods showed high efficiency (>99%) to precipitate selectively Ge using a single precipitation stage from germanium-bearing solutions.

High $P\\perp$ spectra from Au+Au collisions at $\\sqrt{s_{NN}}$ = 130 GeV

CERN Document Server

Dunlop, J C

2002-01-01

We report on hadron production at high transverse momentum from Au+Au collisions at _/sNN = 130GeV, measured with the STAR detector at the Relativistic Heavy Ion Collider (RHIC). Preliminary negative hadron spectra up to p| relative to a reference from p + p collisions. Preliminary azimuthal anisotropies have been measured up to p| = 4.5 GeV/c, which are described well by a hydrodynamical calculation below 1.5 GeV/c, but show a significant deviation at higher p|. A preliminary ratio p/p has been measured by the STAR-RICH detector in the range p| = 2-2.5 GeV/c.

Properties of structural steels melted out of high-purity charge

International Nuclear Information System (INIS)

Marchenko, V.N.; Sergeeva, T.K.; Kondakova, N.K.; Morozov, V.P.; Madorskij, L.L.

1993-01-01

A comparative evaluation has been made of impurities, mechanical properties and hydrogen embirittlement parameters for steels type 40Kh and 40KhS produced by electrometallurgical method with the use of direct reduced charge (DR-steels) and melted in an open-hearth furnace. Investigation results have shown that 40Kh and 40KhS Dr-steels have more coarse austenitic grains and experience more complete transformation of martensite into ferritic-pearlitic mixture on tempering. Threshold stresses increase 2.5 times due to purity enhancement at the expense of application of direct reduced charge

Ge nitride formation in N-doped amorphous Ge2Sb2Te5

International Nuclear Information System (INIS)

Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

2007-01-01

The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

Temperature dependence of luminescence for different surface flaws in high purity silica glass

International Nuclear Information System (INIS)

Fournier, J.; Grua, P.; Neauport, J.; Fargin, E.; Jubera, V.; Talaga, D.; Del Guerzo, A.; Raffy, G.; Jouannigot, S.

2013-01-01

In situ temperature dependence of the Photoluminescence under 325 nm irradiation is used to investigate defect populations existing in different surface flaws in high purity fused silica. Five photoluminescence bands peaking at 1.9, 2.1, 2.3, 2.63 and 3.11 eV have been detected in the spectral area ranging from 1.6 up to 3.6 eV. The Gaussian deconvolution of spectra allows dividing the five luminescence bands in two categories. The former corresponds to bands showing a significant intensity enhancement while temperature decreases; the latter corresponds to bands remaining insensitive to the temperature evolution. Such a behavior brings new information on defects involved in laser damage mechanism at 351 nm in nanosecond regime. (authors)

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

Science.gov (United States)

Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

2018-01-01

Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

Simultaneously Recovering High-Purity Chromium and Removing Organic Pollutants from Tannery Effluent

Directory of Open Access Journals (Sweden)

Jie Zong

2016-01-01

Full Text Available Chromium pollution is a serious issue because of carcinogenic toxicities of the pollutants and low recovery rate of chromium because of the presence of organic, such as protein and fat. In this work, high recovery rate and high purity of the chromium ion were successfully prepared by the way of acid enzyme, flocculant, and Fenton oxidation. The experiments were characterized by TG, TOC, UV-VIS, and SEM. In the work, the tannery waste chrome liquor was used as experimental material. The results showed that the percentage of reduction of TOC in the tannery waste chrome liquor by method of Fenton oxidation, acid enzyme, and the flocculant was 71.15%, 65.26%, and 22.05%, respectively. Therefore, the organism content of chrome tanning waste liquid was greatly reduced through the pretreatment. And the application experiment showed that the properties and grain surface and fibers of the tanned leather with commercial chromium powder and chrome tanning agent prepared from the chromium waste liquid treated with Fenton are nearly the same.

Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

DEFF Research Database (Denmark)

Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

2014-01-01

Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

Ultra high hole mobilities in a pure strained Ge quantum well

International Nuclear Information System (INIS)

Mironov, O.A.; Hassan, A.H.A.; Morris, R.J.H.; Dobbie, A.; Uhlarz, M.; Chrastina, D.; Hague, J.P.; Kiatgamolchai, S.; Beanland, R.; Gabani, S.; Berkutov, I.B.; Helm, M.; Drachenko, O.; Myronov, M.; Leadley, D.R.

2014-01-01

Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were − 14 T < B < + 14 T and 1.5 K < T < 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s was determined for a sheet density (p s ) 9.8 × 10 10 cm −2 (by ME-MSA) and (3.9 ± 0.2) × 10 3 cm 2 /V s for a sheet density (p s ) 5.9 × 10 10 cm −2 (by BAMS). - Highlights: • Pure strained Ge channel grown by reduced pressure chemical vapor deposition • Maximum entropy-mobility spectrum analysis • Bryan's algorithm mobility spectrum analysis • High room temperature hole drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s • Extremely high hole mobility of 1.1 × 10 6 cm 2 /V s at 12 K

Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Energy Technology Data Exchange (ETDEWEB)

Sawano, K., E-mail: sawano@tcu.ac.jp [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Hoshi, Y.; Kubo, S. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Arimoto, K.; Yamanaka, J.; Nakagawa, K. [Center for Crystal Science and Technology, University of Yamanashi, 7 Miyamae-cho, Kofu (Japan); Hamaya, K. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka (Japan); Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka (Japan); Shiraki, Y. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan)

2016-08-31

Structural and electrical properties of a Ge(111) layer directly grown on a Si(111) substrate are studied. Via optimized two-step growth manner, we form a high-quality relaxed Ge layer, where strain-relieving dislocations are confined close to a Ge/Si interface. Consequently, a density of holes, which unintentionally come from crystal defects, is highly suppressed below 4 × 10{sup 16} cm{sup −3}, which leads to significantly high hole Hall mobility exceeding 1500 cm{sup 2}/Vs at room temperature. By layer transfer of the grown Ge layer, we also fabricate a Ge(111)-on-Insulator, which is a promising template for high-performance Ge-based electronic and photonic devices. - Highlights: • A high-quality Ge layer is epitaxially grown on a Si(111) by two-step growth manner. • Growth conditions, such as growth temperatures, are optimized. • Very high hole mobility is obtained from Ge(111) grown on Si(111). • High-quality thin Ge-on-Insulator with (111) orientation is obtained.

Statistical distribution of the local purity in a large quantum system

International Nuclear Information System (INIS)

De Pasquale, A; Pascazio, S; Facchi, P; Giovannetti, V; Parisi, G; Scardicchio, A

2012-01-01

The local purity of large many-body quantum systems can be studied by following a statistical mechanical approach based on a random matrix model. Restricting the analysis to the case of global pure states, this method proved to be successful, and a full characterization of the statistical properties of the local purity was obtained by computing the partition function of the problem. Here we generalize these techniques to the case of global mixed states. In this context, by uniformly sampling the phase space of states with assigned global mixedness, we determine the exact expression of the first two moments of the local purity and a general expression for the moments of higher order. This generalizes previous results obtained for globally pure configurations. Furthermore, through the introduction of a partition function for a suitable canonical ensemble, we compute the approximate expression of the first moment of the marginal purity in the high-temperature regime. In the process, we establish a formal connection with the theory of quantum twirling maps that provides an alternative, possibly fruitful, way of performing the calculation. (paper)

Unique low-molecular-weight lignin with high purity extracted from wood by deep eutectic solvents (DES): a source of lignin for valorization

Energy Technology Data Exchange (ETDEWEB)

Alvarez-Vasco, Carlos; Ma, Ruoshui; Quintero, Melissa; Guo, Mond; Geleynse, Scott; Ramasamy, Karthikeyan K.; Wolcott, Michael; Zhang, Xiao

2016-01-01

This paper reports a new method of applying Deep Eutectic Solvents (DES) for extracting lignin from woody biomass with high yield and high purity. DES mixtures prepared from Choline Chloride (ChCl) and four hydrogen-bond donors–acetic acid, lactic acid, levulinic acid and glycerol–were evaluated for treatment of hardwood (poplar) and softwood (D. fir). It was found that these DES treatments can selectively extract a significant amount of lignin from wood with high yields: 78% from poplar and 58% from D. fir. The extracted lignin has high purity (95%) with unique structural properties. We discover that DES can selectively cleave ether linkages in wood lignin and facilitate lignin removal from wood. The mechanism of DES cleavage of ether bonds between phenylpropane units was investigated. The results from this study demonstrate that DES is a promising solvent for wood delignification and the production of a new source of lignin with promising potential applications.

Nearly Blinking-Free, High-Purity Single-Photon Emission by Colloidal InP/ZnSe Quantum Dots.

Science.gov (United States)

Chandrasekaran, Vigneshwaran; Tessier, Mickaël D; Dupont, Dorian; Geiregat, Pieter; Hens, Zeger; Brainis, Edouard

2017-10-11

Colloidal core/shell InP/ZnSe quantum dots (QDs), recently produced using an improved synthesis method, have a great potential in life-science applications as well as in integrated quantum photonics and quantum information processing as single-photon emitters. Single-particle spectroscopy of 10 nm QDs with 3.2 nm cores reveals strong photon antibunching attributed to fast (70 ps) Auger recombination of multiple excitons. The QDs exhibit very good photostability under strong optical excitation. We demonstrate that the antibunching is preserved when the QDs are excited above the saturation intensity of the fundamental-exciton transition. This result paves the way toward their usage as high-purity on-demand single-photon emitters at room temperature. Unconventionally, despite the strong Auger blockade mechanism, InP/ZnSe QDs also display very little luminescence intermittency ("blinking"), with a simple on/off blinking pattern. The analysis of single-particle luminescence statistics places these InP/ZnSe QDs in the class of nearly blinking-free QDs, with emission stability comparable to state-of-the-art thick-shell and alloyed-interface CdSe/CdS, but with improved single-photon purity.

Electrical conductivity of high-purity germanium crystals at low temperature

Science.gov (United States)

Yang, Gang; Kooi, Kyler; Wang, Guojian; Mei, Hao; Li, Yangyang; Mei, Dongming

2018-05-01

The temperature dependence of electrical conductivity of single-crystal and polycrystalline high-purity germanium (HPGe) samples has been investigated in the temperature range from 7 to 100 K. The conductivity versus inverse of temperature curves for three single-crystal samples consist of two distinct temperature ranges: a high-temperature range where the conductivity increases to a maximum with decreasing temperature, and a low-temperature range where the conductivity continues decreasing slowly with decreasing temperature. In contrast, the conductivity versus inverse of temperature curves for three polycrystalline samples, in addition to a high- and a low-temperature range where a similar conductive behavior is shown, have a medium-temperature range where the conductivity decreases dramatically with decreasing temperature. The turning point temperature ({Tm}) which corresponds to the maximum values of the conductivity on the conductivity versus inverse of temperature curves are higher for the polycrystalline samples than for the single-crystal samples. Additionally, the net carrier concentrations of all samples have been calculated based on measured conductivity in the whole measurement temperature range. The calculated results show that the ionized carrier concentration increases with increasing temperature due to thermal excitation, but it reaches saturation around 40 K for the single-crystal samples and 70 K for the polycrystalline samples. All these differences between the single-crystal samples and the polycrystalline samples could be attributed to trapping and scattering effects of the grain boundaries on the charge carriers. The relevant physical models have been proposed to explain these differences in the conductive behaviors between two kinds of samples.

Antibodies against high frequency Gerbich 2 antigen (anti-Ge2: A real challenge in cross matching lab

Directory of Open Access Journals (Sweden)

Ravindra P Singh

2013-01-01

Full Text Available Transfusion management of patients′ alloimmunized against high-prevalence erythrocyte antigens is often problematic in emergency situations. Gerbich (Ge is very common blood group system and Gerbich-2 (Ge-2 antigen present in high frequency and outside Papua New Guinea population, Ge-2 negative population almost nil. To manage such kind of problems with real emergencies, implementation of rare donor registry program, cryopreservation of red cells of rare donors and biological cross matching to assess significance of these antibodies is warranted.

SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

OpenAIRE

Pan, Hsuan-yu

2010-01-01

This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in- dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio's Quad. A broadband linear amplifier with 46dBm OIP₃ at 20MHz, 34dBm OIP₃ at 1GHz, 6dB noise figure and 10.3dBm P₁dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain...

Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

International Nuclear Information System (INIS)

Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M.; Sun, X.; Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S.

2011-01-01

We investigated the molecular beam deposition of Al 2 O 3 on Ge 0.95 Sn 0.05 surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge 1-x Sn x and Ge/Ge 1-x Sn x surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al 2 O 3 high-κ gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge 1-x Sn x /Al 2 O 3 gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge 1-x Sn x layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D it ) in the range of 10 12 eV -1 cm -2 in mid gap and higher close to the valence band edge.

N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.

Science.gov (United States)

Fang, Yung-Chin; Chen, Kuen-Yi; Hsieh, Ching-Heng; Su, Chang-Chia; Wu, Yung-Hsien

2015-12-09

Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. The capability of the surface passivation was evidenced by the low interface trap density (D(it)) of 1.62 × 10(11) cm(-2) eV(-1), which is primarily due to the formation of Ge-O and Sn-O bonds at the surface by high density/reactivity oxygen radicals that effectively suppress dangling bonds and decrease gap states. The good D(it) not only makes tiny frequency dispersion in the characterization of GeSn MOS capacitors, but results in GeSn N-MOSFETs with outstanding peak electron mobility as high as 518 cm(2)/(V s) which outperforms other devices reported in the literature due to reduced undesirable carrier scattering. In addition, the GeSn N-MOSFETs also exhibit promising characteristics in terms of acceptable subthreshold swing of 156 mV/dec and relatively large I(ON)/I(OFF) ratio more than 4 orders. Moreover, the robust reliability in terms small V(t) variation against high field stress attests the feasibility of using the O2 plasma-treated passivation to advanced GeSn technology.

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures

Science.gov (United States)

Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

2017-10-01

The energy band alignment of Ge1-xSnx/Ge1-x-ySixSny heterostructures was investigated, and control of the valence band offset at the Ge1-xSnx/Ge1-x-ySixSny heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-ySixSny layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-ySixSny layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-xSnx layer on a strain-relaxed Ge1-x-ySixSny layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

Microstructure, Lattice Misfit, and High-Temperature Strength of γ'-Strengthened Co-Al-W-Ge Model Superalloys

Science.gov (United States)

Zenk, Christopher H.; Bauer, Alexander; Goik, Philip; Neumeier, Steffen; Stone, Howard J.; Göken, Mathias

2016-05-01

The quaternary alloy system Co-Al-W-Ge was investigated and it was found that a continuous γ /γ ^' two-phase field extends between the systems Co-Al-W and Co-Ge-W. All alloys examined comprised cuboidal L1_2 precipitates coherently embedded in an A1 matrix. Differential scanning calorimetry measurements revealed that the liquidus, solidus, and γ ^' -solvus temperatures decrease when the Ge content is increased. The lower liquidus temperature and the capability of γ ^' -strengthening in the Ge-rich alloys make them interesting as potential candidates for brazing applications of Co-base superalloys. The γ /γ ^' lattice misfit was determined by high-resolution X-ray diffraction and found to be positive for all alloys investigated, decreasing with increasing Ge content. The mechanical properties of the Al-rich alloys surpass those rich in Ge.

Influence of Ta Content in High Purity Niobium on Cavity Performance Preliminary Results*

CERN Document Server

Kneisel, P

2004-01-01

In a previous paper* a program designed to study the influence of the residual tantalum content on the superconducting properties of pure niobium metal for RF cavities was outlined. The main rationale for this program was based on a potential cost reduction for high purity niobium, if a less strict limit on the chemical specification for Ta content, which is not significantly affecting the RRR–value, could be tolerated for high performance cavities. Four ingots with different Ta contents have been melted and transformed into sheets. In each manufacturing step the quality of the material has been monitored by employing chemical analysis, neutron activation analysis, thermal conductivity measurements and evaluation of the mechanical properties. The niobium sheets have been scanned for defects by an eddy current device. From three of the four ingots—Ta contents 100, 600 and 1,200 wppm—two single cell cavities each of the CEBAF variety have been fabricated and a series of tests on each ...

Physics with a high-intensity proton accelerator below 30 GeV

International Nuclear Information System (INIS)

Hoffman, C.M.

1982-01-01

The types of physics that would be pursued at a high-intensity, moderate-energy proton accelerator are discussed. The discussion is drawn from the deliberations of the 30-GeV subgroup of the Fixed-Target Group at this workshop

Improvement in fuel utilization in pressurized heavy water reactors due to increased heavy water purity

International Nuclear Information System (INIS)

Balakrishnan, M.R.

1991-01-01

This paper reports that in a pressurized heavy water reactor (PHWR), the reactivity of the reactor and, consequently, the discharge burnup of the fuel depend on the isotopic purity of the heavy water used in the reactor. The optimal purity of heavy water used in PHWRs, in turn, depends on the cost of fabricated uranium fuel and on the incremental cost incurred in improving the heavy water purity. The physics and economics aspects of the desirability of increasing the heavy water purity in PHWRs in India were first examined in 1978. With the cost data available at that time, it was found that improving the heavy water purity from 99.80% to 99.95% was economically attractive. The same problem is reinvestigated with current cost data. Even now, there is sufficient incentive to improve the isotopic purity of heavy water used in PHWRs. Admittedly, the economic advantage that can be derived depends on the cost of the fabricated fuel. Nevertheless, irrespective of the economics, there is also a fairly substantial saving in natural uranium. That the increase in the heavy water purity is to be maintained only in the low-pressure moderator system, and not in the high-pressure coolant system, makes the option of achieving higher fuel burnup with higher heavy water purity feasible

Zero- and two-dimensional hybrid carbon phosphors for high colorimetric purity white light-emission.

Science.gov (United States)

Ding, Yamei; Chang, Qing; Xiu, Fei; Chen, Yingying; Liu, Zhengdong; Ban, Chaoyi; Cheng, Shuai; Liu, Juqing; Huang, Wei

2018-03-01

Carbon nanomaterials are promising phosphors for white light emission. A facile single-step synthesis method has been developed to prepare zero- and two-dimensional hybrid carbon phosphors for the first time. Zero-dimensional carbon dots (C-dots) emit bright blue luminescence under 365 nm UV light and two-dimensional nanoplates improve the dispersity and film forming ability of C-dots. As a proof-of-concept application, the as-prepared hybrid carbon phosphors emit bright white luminescence in the solid state, and the phosphor-coated blue LEDs exhibit high colorimetric purity white light-emission with a color coordinate of (0.3308, 0.3312), potentially enabling the successful application of white emitting phosphors in the LED field.

Study of Ge loss during Ge condensation process

International Nuclear Information System (INIS)

Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

2014-01-01

Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface

70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

Energy Technology Data Exchange (ETDEWEB)

Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

2015-02-23

Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

A radioagent method for determination of traces of phosphorus in high-purity silicon

International Nuclear Information System (INIS)

Chen, P.Y.; Chen, J.S.; Sun, H.J.; Yang, M.H.

1985-01-01

The feasibility of the determination of phosphorus at the extreme trace levels in high-purity silicon by radioreagent method is explored. After silicon dissolution with hydrofluoric and nitric acids and matrix volatilization, 12-molybdophosphoric acid is formed by the addition of the reagent, sup(99)MoOsub(4)sup(2-), in nitric acid medium and then extracted into isobutyl acetate. By plotting the phosphorus content against the radioactivity of sup(99)Mo in the organic phase, a linear relationship persisting down to 5 ng is obtained. Special effort was made to eliminate the unreacted sup(99)MoOsub(4)sup(2-) reagent and the optimal control of phosphorus blank introduced through the multistage analytical procedure in order to ensure reliable determination of phosphorus at the ppb level. (author)

Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

Energy Technology Data Exchange (ETDEWEB)

Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

2016-08-29

Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

Improving axion detection sensitivity in high purity germanium detector based experiments

Science.gov (United States)

Xu, Wenqin; Elliott, Steven

2015-04-01

Thanks to their excellent energy resolution and low energy threshold, high purity germanium (HPGe) crystals are widely used in low background experiments searching for neutrinoless double beta decay, e.g. the MAJORANA DEMONSTRATOR and the GERDA experiments, and low mass dark matter, e.g. the CDMS and the EDELWEISS experiments. A particularly interesting candidate for low mass dark matter is the axion, which arises from the Peccei-Quinn solution to the strong CP problem and has been searched for in many experiments. Due to axion-photon coupling, the postulated solar axions could coherently convert to photons via the Primakeoff effect in periodic crystal lattices, such as those found in HPGe crystals. The conversion rate depends on the angle between axions and crystal lattices, so the knowledge of HPGe crystal axis is important. In this talk, we will present our efforts to improve the HPGe experimental sensitivity to axions by considering the axis orientations in multiple HPGe crystals simultaneously. We acknowledge the support of the U.S. Department of Energy through the LANL/LDRD Program.

Spectrographic determination of lanthanides in high-purity uranium compounds, after chromatographic separation by alumina-hydrofluoric acid

International Nuclear Information System (INIS)

Lordello, A.R.; Abrao, A.

1979-01-01

A method is presented for the determination of fourteen rare earth elements in high-purity uranium compounds by emission spectrography. The rare earths are chromatographically separated from uranium by using alumina-hydrofluoric acid. Lanthanum is used both as collector and internal standard. The technique of excitation involves a total consumption of the sample in a 17 ampere direct current arc. The range of determination is about 0.005 to 0.5 μg/g uranium. The coefficient of variation for Pr, Ho, Dy, Er, Tm, Lu, Gd and Tb amounts to 10%. (Author) [pt

Development of {sup 77}Ge/{sup 77}As parent-daughter system for periodic removal of {sup 77}As for environmental sanitation and biochemical purposes

Energy Technology Data Exchange (ETDEWEB)

Olah, Zita; Doczi, Rita [Budapest Univ. of Technology and Economics (Hungary). Inst. of Nuclear Techniques; Szuecs, Zoltan [Hungarian Academy of Sciences, Debrecen (Hungary). Inst. for Nuclear Research; Varga, Zoltan [Hungarian Academy of Sciences, Budapest (Hungary). Research Centre for Natural Sciences

2015-07-01

A simple method was developed for the separation of radioactive {sup 77}As from neutron irradiated natural GeO{sub 2} samples for environmental and biochemical studies. The method is based on the volatility of GeCl{sub 4}. The GeCl{sub 4} was co-evaporated from the reaction mixture with an azeotropic mixture of HCl and water, and immediately condensed into a separate finger part of the special glass apparatus which was cooled by liquid nitrogen. By inverting the room temperature and the deep frozen parts of the glass equipment after three half-lives of the {sup 77}Ge the separation process can be repetitive, getting a special type of {sup 77}Ge/{sup 77}As parent-daughter system. The radionuclidic purity of the remaining As fraction was found to be 99.95%. Its yield, however, drastically decreased in the second and subsequent separations.

The analytical of radiochemical purity of tumor receptor imaging agent 99Tcm-octreotide

International Nuclear Information System (INIS)

Wang Xufu; Zuo Shuyao; Shao Wenbo; Wang Guoming; Sun Jianwen; Zhang Qin

2003-01-01

The radiochemical purity of tumor receptor imaging agent 99 Tc m -octreotide is measured by High Pressure Liquid Chromatography (HPLC) and two systems of chromatography combining method of silver stain. The results show that the radiochemical purity of 98 Tc m -octreotide measured by both methods are effective and correct. It can separate 99 Tc m -octreotide from other radioactive compositions correctly and effectively

Validation of an HPLC method for determination of chemical purity of [{sup 18}F]fluoromisonidazole ([{sup 18}F]FMISO)

Energy Technology Data Exchange (ETDEWEB)

Nascimento, Natalia C.E.S.; Oliveira, Mércia L.; Lima, Fernando R.A., E-mail: nataliafleming@hotmail.com, E-mail: mercial@cnen.gov.br, E-mail: falima@cnen.gov.br [Centro Regional de Ciências Nucleares do Nordeste (CRCN-NE/CNEN-PE), Recife, PE (Brazil); Silveira, Marina B.; Ferreira, Soraya Z.; Silva, Juliana B., E-mail: mbs@cdtn.br, E-mail: zandims@cdtn.br, E-mail: silvajb@cdtn.br [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

2017-07-01

[{sup 18}F]Fluoromisonidazole ([{sup 18}F]FMISO) is a nitroimidazole derivative labelled with fluorine-18 that selectively binds to hypoxic cells. It has been shown to be a suitable PET tracer for imaging hypoxia in tumors as well as in noncancerous tissues. [{sup 18}F]FMISO was prepared using a TRACERlabMX{sub FDG}® module (GE) with cassettes, software sequence and reagents kits from ABX. In this work, we aimed to develop and to validate a new high performance liquid chromatography (HPLC) method for determination of chemical purity of [{sup 18}F]FMISO. Analyses were performed with an Agilent chromatograph equipped with radioactivity and UV detectors. [{sup 18}F]FMISO and impurities were separated on a C18 column by gradient elution with water and acetonitrile. Selectivity, linearity, detection limit (DL), quantification limit (LQ), precision, accuracy and robustness were assessed to demonstrate that the HPLC method is adequate for its intended purpose. The HPLC method showed a good precision, as all RSD values were lower than 5%. Robustness was evaluated considering a variation on parameters such mobile phase gradient and flow rate. Results evidenced that the HPLC method is validated and is suitable for radiochemical purity evaluation of [{sup 18}F]FMISO, considering operational conditions of our laboratory. As an extension of this work, other analytical methods used for [{sup 18}F]FMISO quality control should be evaluated, in compliance with good manufacture practice. (author)

Ion Implantation in Ge: Structural and electrical investigation of the induced lattice damage & Study of the lattice location of implanted impurities

CERN Document Server

Decoster, Stefan; Wahl, Ulrich

The past two decades, germanium has drawn international attention as one of the most promising materials to replace silicon in semiconductor applications. Due to important advantages with respect to Si, such as the increased electron and hole mobility, Ge is well on its way to become an important material in future high-speed integrated circuits. Although the interest in this elemental group IV semiconductor is increasing rapidly nowadays, the number of publications about this material is still relatively scarce, especially when compared to Si. The most widely used technique to dope semiconductors is ion implantation, due to its good control of the dopant concentration and profile, and the isotopic purity of the implanted species. However, there is a major lack of knowledge of the fundamental properties of ion implantation in Ge, which has triggered the research presented in this thesis. One of the most important and generally unwanted properties of ion implantation is the creation of damage to the crystal la...

Photoluminescence measurement of polycrystalline CdTe made of high purity source material

Energy Technology Data Exchange (ETDEWEB)

Hempel, Hannes; Kraft, Christian; Heisler, Christoph; Geburt, Sebastian; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, Friedrich Schiller Universitaet Jena, Helmholtzweg 3, 07743 Jena (Germany)

2012-07-01

CdTe is a common material for thin film solar cells. However, the mainly used CdTe source material is known to contain a high number of intrinsic defects and impurities. In this work we investigate the defect structure of high purity CdTe by means of Photoluminescence, which is a common method to detect the energy levels of defects in the band gap of semiconductors. We used a 633 nm HeNe-Laser at sample temperatures of 8 K. The examined samples were processed in a new vacuum system based on the PVD method. They yield significantly different spectra on as-grown samples compared to those measured on samples which are grown by the standard process, since the double peak at 1.55 eV was hardly detectable and the A-center correlated transition vanished. Instead a peak at 1.50 eV with pronounced phonon coupling was observed. The 1.50 eV peak is known from other measurements but has not been characterized so far. The intention of this work is to characterize this new feature and the influence of post deposition treatments of the CdTe layers on the PL spectra.

Evaluation of measurement uncertainty for purity of a monoterpenic acid by small-scale coulometry

Science.gov (United States)

Norte, L. C.; de Carvalho, E. M.; Tappin, M. R. R.; Borges, P. P.

2018-03-01

Purity of the perylic acid (HPe) which is a monoterpenic acid from natural product (NP) with anti-inflammatory and anticancer properties was analyzed by small-scale coulometry (SSC), due to the low availability of HPe on the pharmaceutic market and its high cost. This work aims to present the evaluation of the measurements uncertainty from the purity of HPe by using SSC. Coulometric mean of purity obtained from 5 replicates resulted in 94.23% ± 0.88% (k = 2.06, for an approximately 95% confidence level). These studies aim in the future to develop the production of certified reference materials from NPs.

A high linearity SiGe HBT LNA for GPS receiver

International Nuclear Information System (INIS)

Luo Yanbin; Shi Jian; Ma Chengyan; Gan Yebing; Qian Min

2014-01-01

A high linearity 1.575 GHz SiGe:HBT low noise amplifier (LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point of +7.8 dBm and an input third-order intercept point of +1.8 dBm. The chip occupies a 500 × 560 μm 2 area and consumes 3.6 mA from a 2.85 V power supply. (semiconductor integrated circuits)

High Purity Tungsten Spherical Particle Preparation From WC-Co Spent Hard Scrap

Directory of Open Access Journals (Sweden)

Han Chulwoong

2015-06-01

Full Text Available Tungsten carbide-cobalt hard metal scrap was recycled to obtain high purity spherical tungsten powder by a combined hydrometallurgy and physical metallurgy pathway. Selective leaching of tungsten element from hard metal scrap occurs at solid / liquid interface and therefore enlargement of effective surface area is advantageous. Linear oxidation behavior of Tungsten carbide-cobalt and the oxidized scrap is friable to be pulverized by milling process. In this regard, isothermally oxidized Tungsten carbide-cobalt hard metal scrap was mechanically broken into particles and then tungsten trioxide particle was recovered by hydrometallurgical method. Recovered tungsten trioxide was reduced to tungsten particle in a hydrogen environment. After that, tungsten particle was melted and solidified to make a spherical one by RF (Ratio Frequency thermal plasma process. Well spherical tungsten micro-particle was successfully obtained from spent scrap. In addition to the morphological change, thermal plasma process showed an advantage for the purification of feedstock particle.

10 CFR 36.63 - Pool water purity.

Science.gov (United States)

2010-01-01

... 10 Energy 1 2010-01-01 2010-01-01 false Pool water purity. 36.63 Section 36.63 Energy NUCLEAR... § 36.63 Pool water purity. (a) Pool water purification system must be run sufficiently to maintain the conductivity of the pool water below 20 microsiemens per centimeter under normal circumstances. If pool water...

A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

Science.gov (United States)

Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

2017-06-01

In this paper, a new Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel (Ge_DUTFET) is proposed and investigated by Silvaco-Atlas simulation. The line tunneling perpendicular to channel and point tunneling parallel to channel simultaneously occur on both sides of the gate. The Ge is chosen as the source region material to increase the line tunneling current. The designed heterojunction between the Ge source and Si channel decreases the point tunneling barrier width to enhance the point tunneling current. And this heterojunction can also promote the Ge_DUTFET to occur point tunneling at the small gate voltage, which makes it obtain the smaller turn-on voltage. Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance. The simulation results reveal that Ge_DUTFET has the better performance compared with the Si_DUTFET. The on-state current and average subthreshold swing of Ge_DUTFET are 1.11 × 10-5A/μm and 35.1mV/dec respectively. The max cut-off frequency (fT) and gain bandwidth product (GBW) are 26.6 GHz and 16.6 GHz respectively. The fT and GBW of the Ge_DUTFET are respectively increased by ∼27.4% and ∼84.3% compared with the Si_DUTFET.

On The Generation of Interferometric Colors in High Purity and Technical Grade Aluminum: An Alternative Green Process for Metal Finishing Industry

International Nuclear Information System (INIS)

Chen, Yuting; Santos, Abel; Ho, Daena; Wang, Ye; Kumeria, Tushar; Li, Junsheng; Wang, Changhai; Losic, Dusan

2015-01-01

Graphical abstract: Toward green processes in metal finishing industry by rationally designed electrochemical anodization. Biomimetic photonic films based on nanoporous anodic alumina produced in high purity and technical grade aluminum foils display vivid colors that can be precisely tuned across the visible spectrum. The presented method is a solid rationale aimed toward green processes for metal finishing industry. - Highlights: • Environmentally friendly approach to color aluminum through biomimetic photonic films. • Nanoporous anodic alumina distributed Bragg Reflectors (NAA-DBRs). • Rationally designed galvanostatic pulse anodization approach. • Macroscopic and microscopic differences in high purity and technical grade aluminum. • Substitute method for conventional coloring processes in metal finishing industry. - Abstract: Metal finishing industry is one of the leading pollutants worldwide and green approaches are urgently needed in order to address health and environmental issues associated with this industrial activity. Herein, we present an environmentally friendly approach aimed to overcome some of these issues by coloring aluminum through biomimetic photonic films based on nanoporous anodic alumina distributed Bragg Reflectors (NAA-DBRs). Our study aims to compare the macroscopic and microscopic differences between the resulting photonic films produced in high purity and technical grade aluminum in terms of color features, appearance, electrochemical behavior and internal nanoporous structure in order to establish a solid rationale toward optimal fabrication processes that can be readily incorporated into industrial methodologies. The obtained results reveal that our approach, based on a rational galvanostatic pulse anodization approach, makes it possible to precisely generate a complete palette of colors in both types of aluminum substrates. As a result of its versatility, this method could become a promising alternative to substitute

A light hydrocarbon fuel processor producing high-purity hydrogen

Science.gov (United States)

Löffler, Daniel G.; Taylor, Kyle; Mason, Dylan

This paper discusses the design process and presents performance data for a dual fuel (natural gas and LPG) fuel processor for PEM fuel cells delivering between 2 and 8 kW electric power in stationary applications. The fuel processor resulted from a series of design compromises made to address different design constraints. First, the product quality was selected; then, the unit operations needed to achieve that product quality were chosen from the pool of available technologies. Next, the specific equipment needed for each unit operation was selected. Finally, the unit operations were thermally integrated to achieve high thermal efficiency. Early in the design process, it was decided that the fuel processor would deliver high-purity hydrogen. Hydrogen can be separated from other gases by pressure-driven processes based on either selective adsorption or permeation. The pressure requirement made steam reforming (SR) the preferred reforming technology because it does not require compression of combustion air; therefore, steam reforming is more efficient in a high-pressure fuel processor than alternative technologies like autothermal reforming (ATR) or partial oxidation (POX), where the combustion occurs at the pressure of the process stream. A low-temperature pre-reformer reactor is needed upstream of a steam reformer to suppress coke formation; yet, low temperatures facilitate the formation of metal sulfides that deactivate the catalyst. For this reason, a desulfurization unit is needed upstream of the pre-reformer. Hydrogen separation was implemented using a palladium alloy membrane. Packed beds were chosen for the pre-reformer and reformer reactors primarily because of their low cost, relatively simple operation and low maintenance. Commercial, off-the-shelf balance of plant (BOP) components (pumps, valves, and heat exchangers) were used to integrate the unit operations. The fuel processor delivers up to 100 slm hydrogen >99.9% pure with <1 ppm CO, <3 ppm CO 2. The

Forbidden energy band gap in diluted a-Ge{sub 1-x}Si{sub x}:N films

Energy Technology Data Exchange (ETDEWEB)

Guarneros, C.; Rebollo-Plata, B. [Posgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Lozada-Morales, R., E-mail: rlozada@fcfm.buap.mx [Posgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Espinosa-Rosales, J.E. [Posgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Portillo-Moreno, J. [Facultad de Ciencias Quimicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Zelaya-Angel, O. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados del IPN, PO Box 14-740, Mexico 07360 D.F. (Mexico)

2012-06-01

By means of electron gun evaporation Ge{sub 1-x}Si{sub x}:N thin films, in the entire range 0 {<=} x {<=} 1, were prepared on Si (100) and glass substrates. The initial vacuum reached was 6.6 Multiplication-Sign 10{sup -4} Pa, then a pressure of 2.7 Multiplication-Sign 10{sup -2} Pa of high purity N{sub 2} was introduced into the chamber. The deposition time was 4 min. Crucible-substrate distance was 18 cm. X-ray diffraction patterns indicate that all the films were amorphous (a-Ge{sub 1-x}Si{sub x}:N). The nitrogen concentration was of the order of 1 at% for all the films. From optical absorption spectra data and by using the Tauc method the energy band gap (E{sub g}) was calculated. The Raman spectra only reveal the presence of Si-Si, Ge-Ge, and Si-Ge bonds. Nevertheless, infrared spectra demonstrate the existence of Si-N and Ge-N bonds. The forbidden energy band gap (E{sub g}) as a function of x in the entire range 0 {<=} x {<=} 1 shows two well defined regions: 0 {<=} x {<=} 0.67 and 0.67 {<=} x {<=} 1, due to two different behaviors of the band gap, where for x > 0.67 exists an abruptly change of E{sub g}(x). In this case E{sub g}(x) versus x is different to the variation of E{sub g} in a-Ge{sub 1-x}Si{sub x} and a-Ge{sub 1-x}Si{sub x}:H. This fact can be related to the formation of Ge{sub 3}N{sub 4} and GeSi{sub 2}N{sub 4} when x {<=} 0.67, and to the formation of Si{sub 3}N{sub 4} and GeSi{sub 2}N{sub 4} for 0.67 {<=} x. - Highlights: Black-Right-Pointing-Pointer Nitrogen doped amorphous Ge{sub 1-x}Si{sub x} thin films are grown by electron gun technique. Black-Right-Pointing-Pointer Nitrogen atoms on E{sub g} of the a-Ge{sub 1-x}Si{sub x} films in the 0 Pound-Sign x Pound-Sign 1 range are analyzed. Black-Right-Pointing-Pointer Variation in 0 Pound-Sign x Pound-Sign 1 range shows a warped change of E{sub g} in 1.0 - 3.6 eV range. Black-Right-Pointing-Pointer The change in E{sub g}(x) behavior when x {approx} 0.67 was associated with Ge{sub 2}SiN{sub 4

Assessment of radiochemical purity of [18F]fludeoxyglucose by high pressure liquid chromatography (HPLC)

International Nuclear Information System (INIS)

Lacerda, Aline E.; Silva, Juliana B.; Silveira, Marina B.; Ferreira, Soraya Z.

2011-01-01

The quality control of [ 18 F]fludeoxyglucose ( 18 FDG) has received attention due to its increasing clinical use. Although the quality requirements of 18 FDG are established in various pharmacopoeia, the suitability of all testing methods used should be verified under actual conditions of use and documented. The aim of this study was to develop a high pressure liquid chromatography (HPLC) method for radiochemical purity evaluation of 18 FDG, based on pharmacopoeia references, and to verify its suitability for routine quality control in our centre. HPLC analysis was performed with an Agilent HPLC. 18 FDG and impurities were separated on an anion-exchange column by isocratic elution with 0.1 M NaOH as the mobile phase. Detection was accomplished with refractive index and NaI (Tl) scintillation detectors. The flow rate of the mobile phase was set at 0.8 mL/min and the column temperature was kept at 35 deg C. Specificity, linearity, precision and robustness were assessed to verify if the method was adequate for its intended purpose. Retention time of 18 FDG was not affected by the presence of other components of the formulation and a good peak resolution was achieved. The analytical curve of 18 FDG was linear, with a correlation coefficient value of 0.9995. Intraday repeatable precision, reported as the relative standard deviation, was 0.11%. Analytical procedure remained unaffected by small variations in mobile phase flow rate. Results evidenced that HPLC is suitable for radiochemical purity evaluation of 18 FDG, considering operational conditions of our laboratory. (author)

A SiGe High Gain and Highly Linear F-Band Single-Balanced Subharmonic Mixer

OpenAIRE

Seyedhosseinzadeh, Neda; Nabavi, Abdolreza; Carpenter, Sona; He, Zhongxia Simon; Bao, Mingquan; Zirath, Herbert

2017-01-01

A compact, broadband, high gain, second-order active down-converter subharmonic mixer is demonstrated using a 130-nm SiGe BiCMOS technology. The mixer adopts a bottom-LO Gilbert topology, on-chip RF and LO baluns and two emitter-follower buffers to realize a high gain wideband operation in both RF and IF frequencies. The measured performance exhibits a flat conversion gain (CG) of about 11 dB from 90 to 130 GHz with an average LO power of +3 dBm and high 2LO-RF isolation better than 60 dB. Th...

Room Temperature Ferromagnetic Mn:Ge(001

Directory of Open Access Journals (Sweden)

George Adrian Lungu

2013-12-01

Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

Stability of amorphous Ge-As(Sb)-Se films to high-energy electron irradiation

International Nuclear Information System (INIS)

Savchenko, N.D.

1999-01-01

The results of the investigation of high-energy electron (6.5 MeV) irradiation effect on structure, optical, electrical and mechanical properties for thin films obtained by thermal evaporation of Ge-As-Se and Ge-Sb-Se glasses have been presented. The electron-induced changes in film properties versus average coordination number and relative free volume for bulk glasses have been discussed. It has been found that the higher radiation stability is characteristic to the films deposited from the glasses with the lower relative free volume

Genome sequence of the thermophilic strain Bacillus coagulans 2-6, an efficient producer of high-optical-purity L-lactic acid.

Science.gov (United States)

Su, Fei; Yu, Bo; Sun, Jibin; Ou, Hong-Yu; Zhao, Bo; Wang, Limin; Qin, Jiayang; Tang, Hongzhi; Tao, Fei; Jarek, Michael; Scharfe, Maren; Ma, Cuiqing; Ma, Yanhe; Xu, Ping

2011-09-01

Bacillus coagulans 2-6 is an efficient producer of lactic acid. The genome of B. coagulans 2-6 has the smallest genome among the members of the genus Bacillus known to date. The frameshift mutation at the start of the d-lactate dehydrogenase sequence might be responsible for the production of high-optical-purity l-lactic acid.

Design and development of fluidized bed reactor system for production of trichlorosilane as a precursor for high purity silicon

International Nuclear Information System (INIS)

Kumar, Rajesh; Mohan, Sadhana; Bhanja, K.; Nayak, S.; Bhattacharya, S.K.

2009-01-01

Trichlorosilane is widely used as precursor material for production of high purity silicon. It is mainly produced by reaction of metallurgical grade silicon with anhydrous HCl gas in a fluidized bed reactor. To develop this process on commercial scale a pilot size fluidized bed reactor system was designed and developed and successfully operated. This paper discusses the critical issues related to these activities. (author)

An indirect sequential determination of phosphorus and arsenic in high-purity tungsten and its compounds by atomic-absorption spectrophotometry

International Nuclear Information System (INIS)

Tekula-Buxbaum, P.

1981-01-01

An indirect atomic-absorption spectrophotometric method based on selective extraction of heteropolymolybdic acids has been developed for determination of small quantities of P and As in high-purity tungsten metal and tungsten compounds. The method is suitable for determination of 5-100 ppm of phosphorus and arsenic. The relative standard deviation is 38-5% for P and 31-3% for As, depending on the concentrations. (auth.)

Impact of thickness on the structural properties of high tin content GeSn layers

Science.gov (United States)

Aubin, J.; Hartmann, J. M.; Gassenq, A.; Milord, L.; Pauc, N.; Reboud, V.; Calvo, V.

2017-09-01

We have grown various thicknesses of GeSn layers in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition cluster tool using digermane (Ge2H6) and tin tetrachloride (SnCl4). The growth pressure (100 Torr) and the F(Ge2H6)/F(SnCl4) mass-flow ratio were kept constant, and incorporation of tin in the range of 10-15% was achieved with a reduction in temperature: 325 °C for 10% to 301 °C for 15% of Sn. The layers were grown on 2.5 μm thick Ge Strain Relaxed Buffers, themselves on Si(0 0 1) substrates. We used X-ray Diffraction, Atomic Force Microscopy, Raman spectroscopy and Scanning Electron Microscopy to measure the Sn concentration, the strain state, the surface roughness and thickness as a function of growth duration. A dramatic degradation of the film was seen when the Sn concentration and layer thickness were too high resulting in rough/milky surfaces and significant Sn segregation.

Policosanol extraction from beeswax and improvement of the purity

Directory of Open Access Journals (Sweden)

Srisaipet Anakhaorn

2017-01-01

Full Text Available Policosanol is a mixture of high molecular weight aliphatic long chain alcohols (20-36 carbon atoms. It has been use in pharmaceutical composition and food supplements. This research aimed to isolate and improve the purity of policosanol extracted from beeswax. Triglycerides and other impurities were eliminated from beeswax by refluxing with hexane followed by isopropanol. The purified beeswax was hydrolyzed by refluxing with 1 M ethanolic NaOH for 2 hours. Purification of policosanol was performed by extracting the hydrolyzed product with acetone at 50-60 °C for 3 hours and it was stored at 4 °C for precipitation. The precipitate was refluxed with heptanes followed by washing with hot water. The heptanes layer was kept for policosanol precipitation at 4 °C. The purity of policosanol was confirmed by TLC and high performance liquid chromatography (HPLC. The yield of purified policosanol was 13.23-13.89 %.

Purity of targets prepared on Cu substrates

Science.gov (United States)

Méens, A.; Rossini, I.; Sens, J. C.

1993-09-01

The purity of several elemental self-supporting targets usually prepared by evaporation onto soluble Cu substrates has been studied. The targets were analysed by Rutherford backscattering and instrumental neutron activation analysis. Because of the high percentage of Cu observed in some Si targets, further measurements, including transmission electron microscopy, have been performed on Si targets deposited by e-gun bombardment onto Cu and ion-beam sputtering onto betaine.

High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

International Nuclear Information System (INIS)

Wang, Peng; Li, Xin; Liu, Hanhui; Lai, Shumei; Chen, Yuye; Xu, Yihong; Chen, Songyan; Li, Cheng; Huang, Wei; Tang, Dingliang

2015-01-01

High (1 1 1) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlO x interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (1 1 1) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100 μm.

Stellar Laboratories: New GeV and Ge VI Oscillator Strengths and their Validation in the Hot White Dwarf RE0503-289

Science.gov (United States)

Rauch, T.; Werner, K.; Biemont, E.; Quinet, P.; Kruk, J. W.

2013-01-01

State-of-the-art spectral analysis of hot stars by means of non-LTE model-atmosphere techniques has arrived at a high level of sophistication. The analysis of high-resolution and high-S/N spectra, however, is strongly restricted by the lack of reliable atomic data for highly ionized species from intermediate-mass metals to trans-iron elements. Especially data for the latter has only been sparsely calculated. Many of their lines are identified in spectra of extremely hot, hydrogen-deficient post-AGB stars. A reliable determination of their abundances establishes crucial constraints for AGB nucleosynthesis simulations and, thus, for stellar evolutionary theory. Aims. In a previous analysis of the UV spectrum of RE 0503-289, spectral lines of highly ionized Ga, Ge, As, Se, Kr, Mo, Sn, Te, I, and Xe were identified. Individual abundance determinations are hampered by the lack of reliable oscillator strengths. Most of these identified lines stem from Ge V. In addition, we identified Ge VI lines for the first time. We calculated Ge V and Ge VI oscillator strengths in order to reproduce the observed spectrum. Methods. We newly calculated Ge V and Ge VI oscillator strengths to consider their radiative and collisional bound-bound transitions in detail in our non-LTE stellar-atmosphere models for the analysis of the Ge IV-VI spectrum exhibited in high-resolution and high-S/N FUV (FUSE) and UV (ORFEUS/BEFS, IUE) observations of RE 0503-289. Results. In the UV spectrum of RE 0503-289, we identify four Ge IV, 37 Ge V, and seven Ge VI lines. Most of these lines are identified for the first time in any star. We can reproduce almost all Ge IV, GeV, and Ge VI lines in the observed spectrum of RE 0503-289 (T(sub eff) = 70 kK, log g = 7.5) at log Ge = -3.8 +/- 0.3 (mass fraction, about 650 times solar). The Ge IV/V/VI ionization equilibrium, that is a very sensitive T(sub eff) indicator, is reproduced well. Conclusions. Reliable measurements and calculations of atomic data are a

Cyclotron production of high-purity 123I for medical applications via the 127I(p,5n)123Xe → 123I nuclear reaction

International Nuclear Information System (INIS)

Lagunas-Solar, M.C.

1985-01-01

The use of iodine-123 in nuclear medicine procedures is well documented in the scientific literature. Also, several methods for its production based on accelerator techniques have been described. Indirectly made 123 I via the 127 I(p,5n) 123 Xe → 123 I reaction produces 123 I of > 99.9% radionuclidic purity, with only 125 I ( 123 I production were developed at the University of California at Davis, where since 1974 the 76-in. isochronous cyclotron of the Crocker Nuclear Laboratory has been used for routine biweekly production of high-purity no-carrier-added 123 I

Helium gas purity monitor based on low frequency acoustic resonance

Science.gov (United States)

Kasthurirengan, S.; Jacob, S.; Karunanithi, R.; Karthikeyan, A.

1996-05-01

Monitoring gas purity is an important aspect of gas recovery stations where air is usually one of the major impurities. Purity monitors of Katherometric type are commercially available for this purpose. Alternatively, we discuss here a helium gas purity monitor based on acoustic resonance of a cavity at audio frequencies. It measures the purity by monitoring the resonant frequency of a cylindrical cavity filled with the gas under test and excited by conventional telephone transducers fixed at the ends. The use of the latter simplifies the design considerably. The paper discusses the details of the resonant cavity and the electronic circuit along with temperature compensation. The unit has been calibrated with helium gas of known purities. The unit has a response time of the order of 10 minutes and measures the gas purity to an accuracy of 0.02%. The unit has been installed in our helium recovery system and is found to perform satisfactorily.

μ+ diffusion and trapping in high purity and oxygen-doped Nb

International Nuclear Information System (INIS)

Brown, J.A.; Heffner, R.H.; Leon, M.; Parkin, D.M.; Schillaci, M.E.; Gauster, W.B.; Fiory, A.T.; Kossler, W.J.; Birnbaum, H.K.; Denison, A.B.; Cooke, D.W.

1979-01-01

Data are presented for the temperature dependence of the muon depolarization rate between 10 K and 120 K for three samples of niobium of varying purity. Two samples, each containing approximately 200 ppm substitutional Ta and interstitial concentrations of 10 ppm and 560 ppm (mostly O), respectively, were studied. A third sample containing only 3 ppm Ta and an estimated 10 ppm total interstitial impurities was also measured. The results indicate that even at the lowest temperatures studied the depolarization of the muon is dominated by traps associated with impurities. (Auth.)

A combined arc-melting and tilt-casting furnace for the manufacture of high-purity bulk metallic glass materials.

Science.gov (United States)

Soinila, E; Pihlajamäki, T; Bossuyt, S; Hänninen, H

2011-07-01

An arc-melting furnace which includes a tilt-casting facility was designed and built, for the purpose of producing bulk metallic glass specimens. Tilt-casting was chosen because reportedly, in combination with high-purity processing, it produces the best fatigue endurance in Zr-based bulk metallic glasses. Incorporating the alloying and casting facilities in a single piece of equipment reduces the amount of laboratory space and capital investment needed. Eliminating the sample transfer step from the production process also saves time and reduces sample contamination. This is important because the glass forming ability in many alloy systems, such as Zr-based glass-forming alloys, deteriorates rapidly with increasing oxygen content of the specimen. The challenge was to create a versatile instrument, in which high purity conditions can be maintained throughout the process, even when melting alloys with high affinity for oxygen. Therefore, the design provides a high-vacuum chamber to be filled with a low-oxygen inert atmosphere, and takes special care to keep the system hermetically sealed throughout the process. In particular, movements of the arc-melting electrode and sample manipulator arm are accommodated by deformable metal bellows, rather than sliding O-ring seals, and the whole furnace is tilted for tilt-casting. This performance of the furnace is demonstrated by alloying and casting Zr(55)Cu(30)Al(10)Ni(5) directly into rods up to ø 10 mm which are verified to be amorphous by x-ray diffraction and differential scanning calorimetry, and to exhibit locally ductile fracture at liquid nitrogen temperature.

Structure and physical properties of Cr{sub 5}B{sub 3}-type Ta{sub 5}Si{sub 3} and Ta{sub 5}Ge{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Yuan, Fang; Forbes, Scott [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada); Ramachandran, Krishna Kumar [Department of Chemistry, University of Alberta, Edmonton, Alberta T6G 2G2 (Canada); Mozharivskyj, Yurij, E-mail: mozhar@mcmaster.ca [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada)

2015-11-25

The Cr{sub 5}B{sub 3}-type Ta{sub 5}Si{sub 3} phase was prepared by arc-melting, while the Cr{sub 5}B{sub 3}-type Ta{sub 5}Ge{sub 3} one was synthesized through sintering at 1000 °C. X-ray single crystal diffraction was employed to elucidate their structure. According to the magnetization measurements, both Ta{sub 5}Si{sub 3} and Ta{sub 5}Ge{sub 3} are Pauli paramagnets, with Ta{sub 5}Ge{sub 3} showing a Curie-Weiss-like paramagnetic behavior at low temperatures likely due to presence of paramagnetic impurity. Both Ta{sub 5}Si{sub 3} and Ta{sub 5}Ge{sub 3} display a very low electrical resistivity from 2 to 300 K. The resistivity is constant below 20 K, but displays a positive temperature coefficient above 20 K. Electronic structure calculations with the TB-LMTO-ASA method support the metallic character of the two phases and suggest that the bonding is optimized in both phases. - Highlights: • Synthesis of Cr{sub 5}B{sub 3}-type Ta{sub 5}Si{sub 3} and Ta{sub 5}Ge{sub 3} phases with high purity by arc-melting and sintering, respectively. • Magnetization data and electrical resistivity of the Cr{sub 5}B{sub 3}-type Ta{sub 5}Si{sub 3} and Ta{sub 5}Ge{sub 3} phases. • Crystal and electronic structure analysis for Ta{sub 5}Si{sub 3} and Ta{sub 5}Ge{sub 3} phase by X-ray diffraction and TB-LMTO-ASA calculations.

On the way to high-power linear proton accelerator for the long half-life radionuclides transmutation

International Nuclear Information System (INIS)

Batskikh, G.I.; Lupandin, O.S.; Murin, B.P.; Fedotov, A.P.

1991-01-01

The concept of continuous mode high-power linear proton accelerator with 1.5 GeV energy, 0.3 A current for the long half-life nuclides transmutation into the short ones (waste of atomic power plants (APP)) is proposed. The accelerator design main principles, scheme and parameters are presented. The accent is made on the accelerator efficiency, reliability and radiation purity. (author)

One-step Ge/Si epitaxial growth.

Science.gov (United States)

Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

2011-07-01

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

Development of high-throughput and high sensitivity capillary gel electrophoresis platform method for Western, Eastern, and Venezuelan equine encephalitis (WEVEE) virus like particles (VLPs) purity determination and characterization.

Science.gov (United States)

Gollapudi, Deepika; Wycuff, Diane L; Schwartz, Richard M; Cooper, Jonathan W; Cheng, K C

2017-10-01

In this paper, we describe development of a high-throughput, highly sensitive method based on Lab Chip CGE-SDS platform for purity determination and characterization of virus-like particle (VLP) vaccines. A capillary gel electrophoresis approach requiring about 41 s per sample for analysis and demonstrating sensitivity to protein initial concentrations as low as 20 μg/mL, this method has been used previously to evaluate monoclonal antibodies, but this application for lot release assay of VLPs using this platform is unique. The method was qualified and shown to be accurate for the quantitation of VLP purity. Assay repeatability was confirmed to be less than 2% relative standard deviation of the mean (% RSD) with interday precision less than 2% RSD. The assay can evaluate purified VLPs in a concentration range of 20-249 μg/mL for VEE and 20-250 μg/mL for EEE and WEE VLPs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of the effect of neutron irradiation on high purity vanadium and vanadium oxygen alloys

International Nuclear Information System (INIS)

Arsenault, R.J.; Bressers, J.

1977-01-01

An investigation of the effect of neutron damage on the low temperature deformation characteristics of high purity vanadium (R/sub 300K//R/sub 4.2K/ = 1100) was undertaken for two purposes. One purpose was to determine if reducing the purity interstitial content to a lower level would result in a large difference in the effective stress between irradiated and non-irradiated samples. The present data along with previously obtained data does indicate that the difference increases as the impurity interstitial content is reduced. The explanation of this observation is based on the rapid increase of the non-irradiated yield stress at 77 0 K due to small increases in the oxygen content; however, the increase of the yield stress of the irradiated samples is much less with the same increase in oxygen content. A second purpose of this investigation was to determine the size and density of observable neutron produced defects as a function of oxygen content by transmission electron microscopy, and to relate the changes in density with changes in the yield stress. It was found that the density decreases and the size increases as the oxygen content decreases. There is qualitative agreement between the increase in yield stress at 300 0 K and the observable defect density. However, the change in the yield stress at 77 0 K due to neutron irradiation cannot be related to defect density and size

Effect of microplastic deformation on the electron ultrasonic absorption in high-purity molybdenum monocrystals

Energy Technology Data Exchange (ETDEWEB)

Pal' -Val' , P.P.; Kaufmann, Kh.J.

1983-03-01

The low temperature (100-6 K) linear absorption of ultrasound (88 kHz) by high purity molybdenum single crystals have been studied. Both unstrained samples and samples sub ected to microplastic deformation (epsilon<=0.45%) were used. Unstrained samples displayed at T<30 K a rapid increase in the absorption with lowering temperature which is interpreted as an indication of electron viscosity due to electron-phonon collisions. After deformation this part of absorption disappeared. This seems to suggest that microplastic deformation brings about in the crystal a sufficiently large number of defects that can compete with phonons in restricting the electron mean free path. A low temperature dynamic annealing has been revealed in strained samples, that is almost complete recovery of the absorption nature under irradiation with high amplitude sound, epsilon/sub 0/ approximately 10/sup -4/, during 10 min, at 6 K. A new relaxation peak of absorption at 10 K has been found in strained samples.

Effect of microplastic deformation on the electron ultrasonic absorption in high-purity molybdenum monocrystals

Energy Technology Data Exchange (ETDEWEB)

Pal' -Val' , P.P. (AN Ukrainskoj SSR, Kharkov. Fiziko-Tekhnicheskij Inst. Nizkikh Temperatur); Kaufmann, Kh.J. (Akademie der Wissenschaften der DDR, Berlin)

1983-03-01

The low temperature (100-6 K) linear absorption of ultrasound (88 kHz) by high purity molybdenum single crystals have been studied. Both unstrained samples and samples subjected to microplastic deformation (epsilon<=0.45%) were used. Unstrained samples displayed at T<30 K a rapid increase in the absorption with lowering temperature which is interpreted as an indication of electron viscosity due to electron-phonon collisions. After deformation this part of absorption disappeared. This seems to suggest that microplastic deformation brings about in the crystal a sufficiently large number of defects that can compete with phonons in restricting the electron mean free path. A low temperature ''dynamic annealing'' has been revealed in strained samples, that is, almost complete recovery of the absorption nature under irradiation with high amplitude sound, epsilon/sub 0/ approximately 10/sup -4/, during 10 min, at 6 K. A new relaxation peak of absorption at 10 K has been found in strained samples.

Uncertainty estimates of purity measurements based on current information: toward a "live validation" of purity methods.

Science.gov (United States)

Apostol, Izydor; Kelner, Drew; Jiang, Xinzhao Grace; Huang, Gang; Wypych, Jette; Zhang, Xin; Gastwirt, Jessica; Chen, Kenneth; Fodor, Szilan; Hapuarachchi, Suminda; Meriage, Dave; Ye, Frank; Poppe, Leszek; Szpankowski, Wojciech

2012-12-01

To predict precision and other performance characteristics of chromatographic purity methods, which represent the most widely used form of analysis in the biopharmaceutical industry. We have conducted a comprehensive survey of purity methods, and show that all performance characteristics fall within narrow measurement ranges. This observation was used to develop a model called Uncertainty Based on Current Information (UBCI), which expresses these performance characteristics as a function of the signal and noise levels, hardware specifications, and software settings. We applied the UCBI model to assess the uncertainty of purity measurements, and compared the results to those from conventional qualification. We demonstrated that the UBCI model is suitable to dynamically assess method performance characteristics, based on information extracted from individual chromatograms. The model provides an opportunity for streamlining qualification and validation studies by implementing a "live validation" of test results utilizing UBCI as a concurrent assessment of measurement uncertainty. Therefore, UBCI can potentially mitigate the challenges associated with laborious conventional method validation and facilitates the introduction of more advanced analytical technologies during the method lifecycle.

Construction, assembling and operation of an equipment for sodium purity

International Nuclear Information System (INIS)

Becquart, E.T.; Botbol, J.; Echenique, P.N.; Fruchtenicht, F.W.; Gil, D.A.; Perillo, P.; Vardich, R.N.; Vigo, D.E.

1993-01-01

The purpose of this work is the production of high purity metallic sodium for bench-scale, research studies. A stainless steel equipment was built and assembled, including high vacuum, heating and cooling systems. It was satisfactorily operated in two successive steps, filtration and vacuum distillation, with a good yield. (Author). 5 refs., 5 figs

Room-temperature ferromagnetic Cr-doped Ge/GeOx core–shell nanowires

Science.gov (United States)

Katkar, Amar S.; Gupta, Shobhnath P.; Motin Seikh, Md; Chen, Lih-Juann; Walke, Pravin S.

2018-06-01

The Cr-doped tunable thickness core–shell Ge/GeOx nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core–shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core–shell thickness and intriguing room temperature ferromagnetism is realized only in core–shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (TC > 300 K) with the dominating values of its magnetic remanence (MR) and coercivity (HC) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeOX core–shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.

Stress corrosion of very high purity stainless steels in alkaline media

International Nuclear Information System (INIS)

Hechmat-Dehcordi, Ebrahim

1981-01-01

This research thesis reports the study of stress corrosion resistance of stainless steels in caustic environments. It notably concerns the electronuclear industrial sector, the production of soda by electrolysis, and the preparation of hydrogen as energy vector. After a presentation of the experimental conditions, the author highlights the influence of purity on stress corrosion cracking of 20Cr-25Ni-type austenitic alloys. The specific action of a high number of addition metallic and non-metallic elements has been studied. Stress corrosion tests have been also performed in autoclave on austeno-ferritic (21 to 25 pc Cr - 6 to 10 pc Ni) as well as ferritic (26 pc Cr) grades. The author reports the study of electrochemical properties of stainless steel in soda by means of potentiostatic techniques with an application of Pourbaix thermodynamic equilibrium diagrams, and the study of the chemical composition of passivation thin layers by Auger spectroscopy. He more particularly studies the influence of electrode potential and of some addition elements on the chemical characteristics of oxides developed at the surface of austenite. Then, the author tries to establish correlations between strain hardening microstructure of the various steels and their sensitivity to stress corrosion [fr

Electrical properties of as-grown and proton-irradiated high purity silicon

Energy Technology Data Exchange (ETDEWEB)

Krupka, Jerzy, E-mail: krupka@imio.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Karcz, Waldemar [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Kamiński, Paweł [Institute of Electronic Materials Technology, Wólczyńska 13, 301-919 Warsaw (Poland); Jensen, Leif [Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund (Denmark)

2016-08-01

The complex permittivity of as-grown and proton-irradiated samples of high purity silicon obtained by the floating zone method was measured as a function of temperature at a few frequencies in microwave spectrum by employing the quasi TE{sub 011} and whispering gallery modes excited in the samples under test. The resistivity of the samples was determined from the measured imaginary part of the permittivity. The resistivity was additionally measured at RF frequencies employing capacitive spectroscopy as well as in a standard direct current experiment. The sample of as-grown material had the resistivity of ∼85 kΩ cm at room temperature. The sample irradiated with 23-MeV protons had the resistivity of ∼500 kΩ cm at 295 K and its behavior was typical of the intrinsic material at room and at elevated temperatures. For the irradiated sample, the extrinsic conductivity region is missing and at temperatures below 250 K hopping conductivity occurs. Thermal cycle hysteresis of the resistivity for the sample of as-grown material is observed. After heating and subsequent cooling of the sample, its resistivity decreases and then slowly (∼50 h) returns to the initial value.

Ge extraction from gasification fly ash

Energy Technology Data Exchange (ETDEWEB)

Oriol Font; Xavier Querol; Angel Lopez-Soler; Jose M. Chimenos; Ana I. Fernandez; Silvia Burgos; Francisco Garcia Pena [Institute of Earth Sciences ' Jaume Almera' , Barcelona (Spain)

2005-08-01

Water-soluble germanium species (GeS{sub 2}, GeS and hexagonal-GeO{sub 2}) are generated during coal gasification and retained in fly ash. This fact together with the high market value of this element and the relatively high contents in the fly ashes of the Puertollano Integrated Gasification in Combined Cycle (IGCC) plant directed our research towards the development of an extraction process for this element. Major objectives of this research was to find a low cost and environmentally suitable process. Several water based extraction tests were carried out using different Puertollano IGCC fly ash samples, under different temperatures, water/fly ash ratios, and extraction times. High Ge extraction yields (up to 84%) were obtained at room temperature (25{sup o}C) but also high proportions of other trace elements (impurities) were simultaneously extracted. Increasing the extraction temperature to 50, 90 and 150{sup o}C, Ge extraction yields were kept at similar levels, while reducing the content of impurities, the water/fly ash ratio and extraction time. The experimental data point out the influence of chloride, calcium and sulphide dissolutions on the Ge extraction. 16 refs., 9 figs., 6 tabs.

Intergranular corrosion of 13Cr and 17Cr martensitic stainless steels in accelerated corrosive solution and high-temperature, high-purity water

International Nuclear Information System (INIS)

Ozaki, Toshinori; Ishikawa, Yuichi

1988-01-01

Intergranular corrosion behavior of 13Cr and 17Cr martensitic stainless steels was studied by electrochemical and immersing corrosion tests. Effects of the mEtallurgical and environmental conditions on the intergranular corrosion of various tempered steels were examined by the following tests and discussed. (a) Anodic polarization measurement and electrolytical etching test in 0.5 kmol/m 3 H 2 SO 4 solution at 293 K. (b) Immersion corrosion test in 0.88 kmol/m 3 HNO 3 solution at 293 K. (c) Long-time immersion test for specimens with a crevice in a high purity water at 473 K∼561 K. It was found from the anodic polarization curves in 0.5 kmol/m 3 H 2 SO 4 solution-at 293 K that the steels tempered at 773∼873 K had susceptibility to intergranular corrosion in the potential region indicating a second current maximum (around-0.1 V. vs. SCE). But the steel became passive in the more noble potential region than the second current peak potential, while in the less noble potential region general corrosion occurred independent of its microstructure. The intergranular corrosion occurred due to the localized dissolution along the pre-austenitic grain boundary and the martensitic lath boundary. It could be explained by the same dissolution model of the chromium depleted zone as proposed for the intergranular corrosion of austenitic and ferritic stainless steels. The intergranular corrosion occurred entirely at the free surface in 0.88 kmol/m 3 HNO 3 solution, while in the high temperature and high purity water only the entrance of the crevice corroded. It was also suggested that this intergranular corrosion might serve as the initiation site for stress corrosion cracking of the martensitic stainless steel. (author)

High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.

Science.gov (United States)

Klementová, Mariana; Palatinus, Lukás; Novotný, Filip; Fajgar, Radek; Subrt, Jan; Drínek, Vladislav

2013-06-01

Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.

The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

Science.gov (United States)

Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

2018-03-01

The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

International Nuclear Information System (INIS)

Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

2014-01-01

We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

Science.gov (United States)

Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2016-08-22

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

Structural stability, dynamical stability, thermoelectric properties, and elastic properties of GeTe at high pressure

Science.gov (United States)

Kagdada, Hardik L.; Jha, Prafulla K.; Śpiewak, Piotr; Kurzydłowski, Krzysztof J.

2018-04-01

The stability of GeTe in rhombohedral (R 3 m ), face centred cubic (F m 3 m ), and simple cubic (P m 3 m ) phases has been studied using density functional perturbation theory. The rhombohedral phase of GeTe is dynamically stable at 0 GPa, while F m 3 m and P m 3 m phases are stable at 3.1 and 33 GPa, respectively. The pressure-dependent phonon modes are observed in F m 3 m and P m 3 m phases at Γ and M points, respectively. The electronic and the thermoelectric properties have been investigated for the stable phases of GeTe. The electronic band gap for rhombohedral and F m 3 m phases of GeTe has been observed as 0.66 and 0.17 eV, respectively, while the P m 3 m phase shows metallic behavior. We have used the Boltzmann transport equation under a rigid band approximation and constant relaxation time approximation as implemented in boltztrap code for the calculation of thermoelectric properties of GeTe. The metallic behavior of P m 3 m phase gives a very low value of Seebeck coefficient compared to the other two phases as a function of temperature and the chemical potential μ. It is observed that the rhombohedral phase of GeTe exhibits higher thermoelectric performance. Due to the metallic nature of P m 3 m phase, negligible thermoelectric performance is observed compared to R 3 m and F m 3 m -GeTe. The calculated lattice thermal conductivities are low for F m 3 m -GeTe and high for R 3 m -GeTe. At the relatively higher temperature of 1350 K, the figure of merit ZT is found to be 0.7 for rhombohedral GeTe. The elastic constants satisfy the Born stability criteria for all three phases. The rhombohedral and F m 3 m phases exhibits brittleness and the P m 3 m phase shows ductile nature.

Improving the electrode performance of Ge through Ge@C core-shell nanoparticles and graphene networks.

Science.gov (United States)

Xue, Ding-Jiang; Xin, Sen; Yan, Yang; Jiang, Ke-Cheng; Yin, Ya-Xia; Guo, Yu-Guo; Wan, Li-Jun

2012-02-08

Germanium is a promising high-capacity anode material for lithium ion batteries, but it usually exhibits poor cycling stability because of its huge volume variation during the lithium uptake and release process. A double protection strategy to improve the electrode performance of Ge through the use of Ge@C core-shell nanostructures and reduced graphene oxide (RGO) networks has been developed. The as-synthesized Ge@C/RGO nanocomposite showed excellent cycling performance and rate capability in comparison with Ge@C nanoparticles when used as an anode material for Li ion batteries, which can be attributed to the electronically conductive and elastic RGO networks in addition to the carbon shells and small particle sizes of Ge. The strategy is simple yet very effective, and because of its versatility, it may be extended to other high-capacity electrode materials with large volume variations and low electrical conductivities.

Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

Science.gov (United States)

Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

2018-01-01

Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

Highly accurate determination of relative gamma-ray detection efficiency for Ge detector and its application

International Nuclear Information System (INIS)

Miyahara, H.; Mori, C.; Fleming, R.F.; Dewaraja, Y.K.

1997-01-01

When quantitative measurements of γ-rays using High-Purity Ge (HPGe) detectors are made for a variety of applications, accurate knowledge of oy-ray detection efficiency is required. The emission rates of γ-rays from sources can be determined quickly in the case that the absolute peak efficiency is calibrated. On the other hand, the relative peak efficiencies can be used for determination of intensity ratios for plural samples and for comparison to the standard source. Thus, both absolute and relative detection efficiencies are important in use of γ-ray detector. The objective of this work is to determine the relative gamma-ray peak detection efficiency for an HPGe detector with the uncertainty approaching 0.1% . We used some nuclides which emit at least two gamma-rays with energies from 700 to 2400 keV for which the relative emission probabilities are known with uncertainties much smaller than 0.1%. The relative peak detection efficiencies were calculated from the measurements of the nuclides, 46 Sc, 48 Sc, 60 Co and 94 Nb, emitting two γ- rays with the emission probabilities of almost unity. It is important that various corrections for the emission probabilities, the cascade summing effect, and the self-absorption are small. A third order polynomial function on both logarithmic scales of energy and efficiency was fitted to the data, and the peak efficiency predicted at certain energy from covariance matrix showed the uncertainty less than 0.5% except for near 700 keV. As an application, the emission probabilities of the 1037.5 and 1212.9 keV γ-rays for 48 Sc were determined using the function of the highly precise relative peak efficiency. Those were 0.9777+0,.00079 and 0.02345+0.00017 for the 1037.5 and 1212.9 keV γ-rays, respectively. The sum of these probabilities is close to unity within the uncertainty which means that the certainties of the results are high and the accuracy has been improved considerably

MIS High-Purity Plutonium Oxide Hydride Product 5501579 (SSR124): Final Report

Energy Technology Data Exchange (ETDEWEB)

Veirs, Douglas Kirk [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Stroud, Mary Ann [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Berg, John M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Narlesky, Joshua Edward [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Worl, Laura Ann [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Martinex, Max A. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Carillo, Alex [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2018-02-08

A high-purity plutonium dioxide material from the Material Identification and Surveillance (MIS) Program inventory has been studied with regard to gas generation and corrosion in a storage environment. Sample 5501579 represents process plutonium oxides from hydride oxide from Rocky Flats that are currently stored in 3013 containers. After calcination to 950°C, the material contained 87.42% plutonium with no major impurities. This study followed over time, the gas pressure of a sample with nominally 0.5 wt% water in a sealed container with an internal volume scaled to 1/500th of the volume of a 3013 container. Gas compositions were measured periodically over a six year period. The maximum observed gas pressure was 124 kPa. The increase over the initial pressure of 70 kPa was primarily due to generation of nitrogen and carbon dioxide gas. Hydrogen and oxygen were minor components of the headspace gas. At the completion of the study, the internal components of the sealed container showed signs of corrosion.

Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields

International Nuclear Information System (INIS)

Palmer, Martin John

2001-01-01

Silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) for high speed, high current applications are rapidly approaching the physical and financial limits of the technology. This opens opportunities for the incorporation of materials with intrinsically better transport characteristics. An alloy of silicon and germanium is one such material that is gaining much recognition as the active component of MOSFETs and as the secondary structures (such as the gate electrode). This work examines a batch of buried channel Si 0.64 Ge 0.36 p-MOSFETs, with a minimum effective length of 0.35 μm, under different bias conditions and at different temperatures. High current and transconductance enhancements are apparent at long gate lengths. The carrier mobility is up to a factor of 2.5 times that of silicon at room temperature and 7.5 times at 4 K. A clear trend of decreasing peak mobility with decreasing silicon cap thickness is evident. Simulations show that scattering caused by the roughness of the SiO 2 /Si interface dominates, rather than alloy scattering or Si/SiGe roughness, even for a buried channel. This scattering increases with the proximity of the carriers to the interface. An increase of interface trap density with decreasing cap thickness, demonstrates that segregated germanium exists some distance into the cap and interferes with the oxidation process. This will increase scattering through increased SiO 2 /Si roughness and increased trapped charge. The short channel, high field results are comparable or slightly worse than those of silicon due to lower saturation drift velocity. However, fitting to a drift-diffusion model shows an apparent increase in saturation velocity for short channels, especially at low temperatures. This effect correlates with the low field mobility and is greater for devices containing SiGe. This is an indication of velocity overshoot, which may enhance the performance of SiGe MOSFETs at deep submicron gate lengths. (author)

Production of R,R-2,3-butanediol of ultra-high optical purity from Paenibacillus polymyxa ZJ-9 using homologous recombination.

Science.gov (United States)

Zhang, Li; Cao, Can; Jiang, Ruifan; Xu, Hong; Xue, Feng; Huang, Weiwei; Ni, Hao; Gao, Jian

2018-08-01

The present study describes the use of metabolic engineering to achieve the production of R,R-2,3-butanediol (R,R-2,3-BD) of ultra-high optical purity (>99.99%). To this end, the diacetyl reductase (DAR) gene (dud A) of Paenibacillus polymyxa ZJ-9 was knocked out via homologous recombination between the genome and the previously constructed targeting vector pRN5101-L'C in a process based on homologous single-crossover. PCR verification confirmed the successful isolation of the dud A gene disruption mutant P. polymyxa ZJ-9-△dud A. Moreover, fermentation results indicated that the optical purity of R,R-2,3-BD increased from about 98% to over 99.99%, with a titer of 21.62 g/L in Erlenmeyer flasks. The latter was further increased to 25.88 g/L by fed-batch fermentation in a 5-L bioreactor. Copyright © 2018 Elsevier Ltd. All rights reserved.

Differential scanning calorimetry method for purity determination: A case study on polycyclic aromatic hydrocarbons and chloramphenicol

International Nuclear Information System (INIS)

Kestens, V.; Zeleny, R.; Auclair, G.; Held, A.; Roebben, G.; Linsinger, T.P.J.

2011-01-01

Highlights: → Purity assessment of polycyclic aromatic hydrocarbons and chloramphenicol by DSC. → DSC results compared with traditional purity methods. → Different methods give different results, multiple method approach recommended. → DSC sensitive to impurities that have similar structures as main component. - Abstract: In this study the validity and suitability of differential scanning calorimetry (DSC) to determine the purity of selected polycyclic aromatic hydrocarbons and chloramphenicol has been investigated. The study materials were two candidate certified reference materials (CRMs), 6-methylchrysene and benzo[a]pyrene, and two different batches of commercially available highly pure chloramphenicol. The DSC results were compared with those obtained by other methods, namely gas and liquid chromatography with mass spectrometric detection, liquid chromatography with diode array detection, and quantitative nuclear magnetic resonance. The purity results obtained by these different analytical methods confirm the well-known challenges of comparing results of different method-defined measurands. In comparison with other methods, DSC has a much narrower working range. This limits the applicability of DSC as purity determination method, for instance during the assignment of the purity value of a CRM. Nevertheless, this study showed that DSC can be a powerful technique to detect impurities that are structurally very similar to the main purity component. From this point of view, and because of its good repeatability, DSC can be considered as a valuable technique to investigate the homogeneity and stability of candidate purity CRMs.

DT fusion neutron irradiation of BNL--LASL superconductor wires, LASL YAG, Al2O3 and Spinel, LASL-IIT MgO, YAG, Al2O3 and Spinel, and NRL GeO2 crystals, December 28, 1977

International Nuclear Information System (INIS)

MacLean, S.C.

1978-01-01

The DT fusion neutron irradiation of eleven BNL-LAST superconductor wires, six NRL GeO 2 crystals, two YAG, two Spinel and two Al 2 O 3 crystals for LASL and four LASL high purity single crystals of MgO, YAG, Spinel and Al 2 O 3 is described. The sample position, beam-on time, and neutron dose record are given. The maximum fluence on any sample was 1.51 x 10 16 neutrons/cm 2

Electron-electron interaction in p-SiGe/Ge quantum wells

International Nuclear Information System (INIS)

Roessner, Benjamin; Kaenel, Hans von; Chrastina, Daniel; Isella, Giovanni; Batlogg, Bertram

2005-01-01

The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 x 10 11 cm -2 . At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2 /Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect

Determination of continuous variable entanglement by purity measurements.

Science.gov (United States)

Adesso, Gerardo; Serafini, Alessio; Illuminati, Fabrizio

2004-02-27

We classify the entanglement of two-mode Gaussian states according to their degree of total and partial mixedness. We derive exact bounds that determine maximally and minimally entangled states for fixed global and marginal purities. This characterization allows for an experimentally reliable estimate of continuous variable entanglement based on measurements of purity.

XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

International Nuclear Information System (INIS)

Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

2005-01-01

Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

A novel high color purity blue-emitting phosphor: CaBi{sub 2}B{sub 2}O{sub 7}:Tm{sup 3+}

Energy Technology Data Exchange (ETDEWEB)

Li, Jiangong, E-mail: lijiangong01@gmail.com [Department of Electronic Science and Engineering, Huanghuai University, Zhumadian 463000 (China); Yan, Huifang [Department of Foreign Languages and Literature, Huanghuai University, Zhumadian 463000 (China); Yan, Fengmei [Department of Chemistry and Chemical Engineering, Huanghuai University, Zhumadian 463000 (China)

2016-07-15

Graphical abstract: - Highlights: • A series of Tm{sup 3+}-doped CaBi{sub 2}B{sub 2}O{sub 7} blue-emitting phosphors were prepared. • The optimum doping content of Tm{sup 3+} ions was found. • The critical distance and concentration quenching mechanism was discussed. • The color purity of as prepared sample was analyzed and compared. - Abstract: A series of Tm{sup 3+}-doped CaBi{sub 2−x}B{sub 2}O{sub 7}:xTm{sup 3+} (0.02 ≤ x ≤ 0.12) blue-emitting phosphors with high color purity were prepared by solid-state reaction method. The crystal structure and luminescence properties of the as-prepared phosphors were studied. This phosphor shows a satisfactory blue performance (peak at 453 nm) due to the {sup 1}D{sub 2} → {sup 3}F{sub 4} transition of Tm{sup 3+} excited by 357 nm light. Investigation of Tm{sup 3+} content dependent emission spectra indicates that x = 0.04 is the optimum doping content of Tm{sup 3+} ions in the CaBi{sub 2}B{sub 2}O{sub 7} host. The critical distance and the concentration quenching mechanism were also investigated. In particular, the color purity of as prepared sample was analyzed and the result shows that the color purity of CaBi{sub 2}B{sub 2}O{sub 7}:Tm{sup 3+} is higher than the commercial blue phosphor BaMgAl{sub 10}O{sub 17}:Eu{sup 2+} (BAM:Eu{sup 2+}) and the latest reported Tm{sup 3+} doped blue phosphors. The present work suggests that the CaBi{sub 2}B{sub 2}O{sub 7}:Tm{sup 3+} phosphor is a potential blue-emitting candidate for the application in the near-UV WLEDs.

Steam purity in PWRs

International Nuclear Information System (INIS)

Hopkinson, J.; Passell, T.

1982-01-01

Reports that 2 EPRI studies of PWRs prove that impure steam triggers decay of turbine metals. Reveals that EPRI is attempting to improve steam monitoring and analysis, which are key steps on the way to deciding the most cost-effective degree of steam purity, and to upgrade demineralizing systems, which can then reliably maintain that degree of purity. Points out that 90% of all cracks in turbine disks have occurred at the dry-to-wet transition zone, dubbed the Wilson line. Explains that because even very clean water contains traces of chemical impurities with concentrations in the parts-per-billion range, Crystal River-3's secondary loop was designed with even more purification capability; a deaerator to remove oxygen and prevent oxidation of system metals, and full-flow resin beds to demineralize 100% of the secondary-loop water from the condenser. Concludes that focusing attention on steam and water chemistry can ward off cracking and sludge problems caused by corrosion

Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

Science.gov (United States)

Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

2017-06-01

Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

Melt-drop technique for the production of high-purity metal powder

International Nuclear Information System (INIS)

Aldinger, F.; Linck, E.; Claussen, N.

1977-01-01

The production of high-purity powders of metals and alloys such as beryllium, titanium alloys, or superalloys is a problem. Oxidation of these materials cannot be avoided. Oxidation occurs in inert gases and even in reducing atmospheres when any gas impurities are present. Therefore, the powder production of these materials has to be performed either in high vacuum or at least in a static atmosphere of inert gas purified immediately before coming into contact with the disintegrating material. These requirements are very well met by the melt-drop technique presented in this paper, especially for coarse powders which must not necessarily be cold-workable. This is true, for example, for superalloys where high-temperature applications require large grain sizes; or in titanium alloys because the final microstructure will be achieved by a thermomechanical treatment. In the case of beryllium and beryllium alloys, where grain sizes <5 μm are desired, further milling is necessary. But the melt-drop technique offers a simple and clean method directly from the purifying process of vacuum melting. In melt-drop processes a liquid metal flows through a nozzle at the bottom of a crucible or the melt is just poured through a sieve. The theory of disintegration of a liquid jet into droplets, dates back to the 19th century. More recent investigations attempted to produce uniformly sized droplets by applying a capillary wave of given wave length to the jet. But this has been done only with non-metallic materials. Evidence is presented to prove the theory and show that this concept is applicable to the production of metal powders with controlled particle size

Si/Ge intermixing during Ge Stranski–Krastanov growth

Directory of Open Access Journals (Sweden)

Alain Portavoce

2014-12-01

Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

Shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowires

Science.gov (United States)

Wen, Feng; Dillen, David C.; Kim, Kyounghwan; Tutuc, Emanuel

2017-06-01

We investigate the shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowire heterostructures grown using a combination of a vapor-liquid-solid (VLS) growth mechanism for the core, followed by in-situ epitaxial shell growth using ultra-high vacuum chemical vapor deposition. Cross-sectional transmission electron microscopy reveals that the VLS growth yields cylindrical Ge, and Si nanowire cores grown along the ⟨111⟩, and ⟨110⟩ or ⟨112⟩ directions, respectively. A hexagonal cross-sectional morphology is observed for Ge-SixGe1-x core-shell nanowires terminated by six {112} facets. Two distinct morphologies are observed for Si-SixGe1-x core-shell nanowires that are either terminated by four {111} and two {100} planes associated with the ⟨110⟩ growth direction or four {113} and two {111} planes associated with the ⟨112⟩ growth direction. We show that the Raman spectra of Si- SixGe1-x are correlated with the shell morphology thanks to epitaxial growth-induced strain, with the core Si-Si mode showing a larger red shift in ⟨112⟩ core-shell nanowires compared to their ⟨110⟩ counterparts. We compare the Si-Si Raman mode value with calculations based on a continuum elasticity model coupled with the lattice dynamic theory.

Study on the Key Technology of High Purity Strontium Titanate Powder Synthesized from Oxalic Acid Co-sediment Precipitation

Science.gov (United States)

Bi, Xiaoguo; Dong, Yingnan; Li, Yingjie; Niu, Wei; Tang, Jian; Ding, Shuang; Li, Meiyang

2017-09-01

Oxalate coprecipitation is applied in this paper, high purity titanium tetrachloride, and after the purification of strontium chloride, match with a certain concentration of solution, oxalate and strontium chloride and titanium tetrachloride in 1.005:1.000 make strontium titanium mixture ratio, slowly under 60°C to join in oxalic acid solution, aging around 4 h, get oxygen titanium strontium oxalate (SrTiO(C2O4)2 • 4H2 ) precipitation, after washing, drying and other process made oxygen titanium strontium oxalate powder.

Ultra low energy-ultra low background high purity germanium detectors for studies on dark matter

International Nuclear Information System (INIS)

Soma, A.K.; Singh, V.; Singh, L.; Singh, M.K.; Wong, H.T.

2009-01-01

Weakly Interacting Massive Particles (WIMP) are the leading DM candidates. Super symmetric particles (SUSY) are one of the leading WIMP candidates. To probe this least explored region Taiwan EXperiments On NeutrinO collaboration is pursuing research and development program by using High Purity Germanium detectors (HPGe). These detectors offer a matured technology to scale up the detectors and achieve sub-keV level threshold i.e. few hundreds of eV, economically. The various detectors developed by the collaboration is shown in the below figure. The current goal of the collaboration is to develop detectors of kg-scale target mass, ∼100 eV threshold and low-background specification for the studies on WIMPs, μ v and neutrino - nucleus coherent scattering

Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

Science.gov (United States)

Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

2016-04-01

A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.

Science.gov (United States)

Niu, Gang; Capellini, Giovanni; Schubert, Markus Andreas; Niermann, Tore; Zaumseil, Peter; Katzer, Jens; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Xie, Ya-Hong; von Känel, Hans; Schroeder, Thomas

2016-03-04

The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation theory predict that the selective growth occurs close to thermodynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely short re-evaporation time and diffusion length. The growth selectivity is ensured by the desorption-limited growth regime leading to the observed pattern independence, i.e. the absence of loading effect commonly encountered in chemical vapor deposition. The growth condition of high temperature and low deposition rate is responsible for the observed high crystalline quality of the Ge islands which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si nano-tip approach. Single island as well as area-averaged characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully relaxed. Such well-ordered high quality Ge islands present a step towards the achievement of materials suitable for optical applications.

Laser beams in high energy physics

International Nuclear Information System (INIS)

Milburn, R.H.

1976-01-01

Back-scattered ruby laser light from energetic electrons has facilitated a family of bubble chamber experiments in the interactions of highly polarized and quasi-monochromatic photons up to 10 GeV with 4π acceptance at the 100 to 200 event/μb level. Further studies of this sort demand the use of high-repetition-rate track chambers. To exploit the polarization and energetic purity intrinsic to the back-scattered beam one must achieve nearly two orders of magnitude increase in the average input optical power, and preferably also higher quantum energies. Prospects for this technique and its applications given modern laser capabilities and new accelerator developments are discussed

Photoluminescence of highly compensated GaAs doped with high concentration of Ge

Science.gov (United States)

Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

1999-12-01

We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks

Energy Technology Data Exchange (ETDEWEB)

Kanashima, T., E-mail: kanashima@ee.es.osaka-u.ac.jp; Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K. [Graduate School of Engineering Science, Osaka University, Machkaneyama 1-3, Toyonaka, Osaka 560-8531 (Japan); Nohira, H. [Tokyo City University, 1-28-1 Tamazutumi, Setagaya-ku, Tokyo 158-8557 (Japan)

2015-12-14

We demonstrate a high-quality La{sub 2}O{sub 3} layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La{sub 2}O{sub 3}(001) and Ge(111). Structural analyses reveal that (001)-oriented La{sub 2}O{sub 3} layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La{sub 2}O{sub 3} layer is roughly estimated to be ∼19 from capacitance-voltage (C-V) analyses in Au/La{sub 2}O{sub 3}/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge–O–La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO{sub 2} monolayer. We discuss a model of the interfacial structure between La{sub 2}O{sub 3} and Ge(111) and comment on the C-V characteristics.

Effect of small additions of silicon, iron, and aluminum on the room-temperature tensile properties of high-purity uranium

International Nuclear Information System (INIS)

Ludwig, R.L.

1983-01-01

Eleven binary and ternary alloys of uranium and very low concentrations of iron, silicon, and aluminum were prepared and tested for room-temperature tensile properties after various heat treatments. A yield strength approximately double that of high-purity derby uranium was obtained from a U-400 ppM Si-200 ppM Fe alloy after beta solution treatment and alpha aging. Higher silicon plus iron alloy contents resulted in increased yield strength, but showed an unacceptable loss of ductility

Quantitative analyses of impurity silicon-carbide (SiC) and high-purity-titanium by neutron activation analyses based on k0-standardization method. Development of irradiation silicon technology in productivity using research reactor (Joint research)

International Nuclear Information System (INIS)

Motohashi, Jun; Takahashi, Hiroyuki; Magome, Hirokatsu; Sasajima, Fumio; Tokunaga, Okihiro; Kawasaki, Kozo; Onizawa, Koji; Isshiki, Masahiko

2009-07-01

JRR-3 and JRR-4 have been providing neutron-transmutation-doped silicon (NTD-Si) by using the silicon NTD process, which is a method to produce a high quality semiconductor. The domestic supply of NTD-Si is insufficient for the demand, and the market of NTD-Si is significantly growing at present. It is very important to increase achieve the production. To fulfill the requirement, we have been investigating a neutron filter, which is made of high-purity-titanium, for uniform doping. Silicon-carbide (SiC) semiconductor doped with NTD technology is considered suitable for high power devices with superior performances to conventional Si-based devices. We are very interested in the SiC as well. This report presents the results obtained after the impurity contents in the high-purity-titanium and SiC were analyzed by neutron activation analyses (NAA) using k 0 -standardization method. There were 6 and 9 impurity elements detected from the high-purity-titanium and SiC, respectively. Among those Sc from the high-purity-titanium and Fe from SiC were comparatively long half life nuclides. From the viewpoint of exposure in handling them, we need to examine the impurity control of materials. (author)

Characteristics of high-purity Teflon vial for 14C measurement in old tree rings

International Nuclear Information System (INIS)

Sakurai, H.; Saswaki, Y.; Matsumoto, T.; Aoki, T.; Kato, W.; Gandou, T.; Gunji, S.; Tokanai, F.

2003-01-01

14 C concentration in single-year tree rings of an old cedar of ca. 2500 years ago is measured to investigate the 11-yr periodicity of solar activity. Our highly accurate 14 C measuring system is composed of a benzene synthesizer capable of producing a large quantity (10 g) of benzene and a Quantulus 1220 TM liquid scintillation counting system. The accuracy is less than 0.2% for measurements of 14 C concentration. The benzene sample is contained in a high-purity Teflon/copper-counting vial (20 ml) manufactured by Wallac Oy Company. We found a vial with an irregular copper cap for the measurements of 11 tree rings. The behavior of the vial with the irregular cap was investigated. The Teflon sheet inside the cap plays an important role in achieving stable measurement. The rate of volatilization of the benzene was less than 0.35 mg/day for vials with ordinary caps. This results in the volatilization rate of 0.003% for 10.5 g of benzene and hence guarantees measurement at an accuracy of 0.2% for 70 days

Structural and mechanical behaviour of severe plastically deformed high purity aluminium sheets processed by constrained groove pressing technique

International Nuclear Information System (INIS)

Satheesh Kumar, S.S.; Raghu, T.

2014-01-01

Highlights: • High purity aluminium sheets constrained groove pressed up to plastic strain of 5.8. • Microstructural evolution studied by TEM and X-ray diffraction profile analysis. • Ultrafine grained structure with grain size ∼900 nm achieved in sheets. • Yield strength increased by 5.3 times and tensile strength doubled after first pass. • Enhanced deformation homogeneity seen with increased accumulated plastic strain. - Abstract: High purity aluminium sheets (∼99.9%) are subjected to intense plastic straining by constrained groove pressing method successfully up to 5 passes thereby imparting an effective plastic strain of 5.8. Transmission electron microscopy studies of constrained groove pressed sheets divulged significant grain refinement and the average grain sizes obtained after five pass is estimated to be ∼0.9 μm. In addition to that, microstructural evolution of constrained groove pressed sheets is characterized by X-ray diffraction peak profile analysis employing Williamson–Hall method and the results obtained fairly concur with electron microscopy findings. The tensile behaviour evolution with increased straining indicates substantial improvement of yield strength by ∼5.3 times from 17 MPa to 90 MPa during first pass corroborated to grain refinement observed. Marginal increase in strengths is noticed during second pass followed by minor drop in strengths attributed to predominance of dislocation recovery is noticed in subsequent passes. Quantitative assessment of degree of deformation homogeneity using microhardness profiles reveal relatively better strain homogeneity at higher number of passes

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

Directory of Open Access Journals (Sweden)

Wei-Ting eLai

2016-02-01

Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

Industrial-scale separation of high-purity single-chirality single-wall carbon nanotubes for biological imaging

Science.gov (United States)

Yomogida, Yohei; Tanaka, Takeshi; Zhang, Minfang; Yudasaka, Masako; Wei, Xiaojun; Kataura, Hiromichi

2016-01-01

Single-chirality, single-wall carbon nanotubes are desired due to their inherent physical properties and performance characteristics. Here, we demonstrate a chromatographic separation method based on a newly discovered chirality-selective affinity between carbon nanotubes and a gel containing a mixture of the surfactants. In this system, two different selectivities are found: chiral-angle selectivity and diameter selectivity. Since the chirality of nanotubes is determined by the chiral angle and diameter, combining these independent selectivities leads to high-resolution single-chirality separation with milligram-scale throughput and high purity. Furthermore, we present efficient vascular imaging of mice using separated single-chirality (9,4) nanotubes. Due to efficient absorption and emission, blood vessels can be recognized even with the use of ∼100-fold lower injected dose than the reported value for pristine nanotubes. Thus, 1 day of separation provides material for up to 15,000 imaging experiments, which is acceptable for industrial use. PMID:27350127

Jerusalem artichoke powder: a useful material in producing high-optical-purity l-lactate using an efficient sugar-utilizing thermophilic Bacillus coagulans strain.

Science.gov (United States)

Wang, Limin; Xue, Zhangwei; Zhao, Bo; Yu, Bo; Xu, Ping; Ma, Yanhe

2013-02-01

Jerusalem artichoke is a low-requirement crop, which does not interfere with food chain, and is a promising carbon source for industrial fermentation. Microbial conversion of such a renewable raw material to useful products, such as lactic acid, is an important objective in industrial biotechnology. In this study, high-optical-purity l-lactate was efficiently produced from the hydrolysates of Jerusalem artichoke powder by a thermophilic bacterium, Bacillus coagulans XZL4. High l-lactate production (134gl(-1)) was obtained using 267gl(-1) Jerusalem artichoke powder (total reducing sugars of 140gl(-1)) and 10gl(-1) of corn steep powder in fed-batch fermentation, with an average productivity of 2.5gl(-1)h(-1) and a yield of 0.96gg(-1) reducing sugars. The final product optical purity is 99%, which meets the requirement of lactic acid polymerization. Our study represents a cost-effective and promising method for polymer-grade l-lactate production using a cheap raw bio-resource. Copyright © 2012 Elsevier Ltd. All rights reserved.

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

International Nuclear Information System (INIS)

Ohba, R.; Ohta, J.; Shimomoto, K.; Fujii, T.; Okamoto, K.; Aoyama, A.; Nakano, T.; Kobayashi, A.; Fujioka, H.; Oshima, M.

2009-01-01

Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001] InN //[001] HfN //[001] MgO . X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. - Graphical abstract: Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been revealed that the phase purity of the cubic InN films was as high as 99 %, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.

High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

International Nuclear Information System (INIS)

Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

2008-01-01

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

OpenAIRE

Chad A. Stephenson; Miriam Gillett-Kunnath; William A. O’Brien; Robert Kudrawiec; Mark A. Wistey

2016-01-01

Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect. By using a precursor gas with a Ge4C core, C can be preferentially incorporated in substitutional sites, suppressing interstitial and C cluster defects. We present a method of reproducible and upscalable gas synthesis of tetrakis(germyl)methane, or (H3Ge)4C, followed by the design of a hybrid gas/solid-source molecu...

Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.

Science.gov (United States)

Wu, Weihua; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-10-06

Superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phase-change memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multi-level switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.

Continuous, flexible, and high-strength superconducting Nb3Ge and Nb3Sn filaments

International Nuclear Information System (INIS)

Ahmad, I.; Heffernan, W.J.

1976-01-01

Fabrication of continuous, flexible, and high-strength (1600 MN/m 2 ) composite filaments of Nb 3 Ge (T/subc/ 18 0 K) and Nb 3 Sn is reported, involving chemical vapor deposition of these compounds on Nb-coated high-strength W--1% ThO 2 filaments

High pressure 129I Moessbauer studies of GeI4 molecular crystals

International Nuclear Information System (INIS)

Pasternak, M.P.; Taylor, R.D.

1989-01-01

The Moessbauer effect in 129 I in conjunction with Diamond-Anvil-Cell high pressure techniques was applied to investigate the high pressure phase(s) of the molecular crystal GeI 4 . The 129 I Quadrupole Interaction was the main probe for characterizing the intermolecular structural transformation with pressure. With increasing pressure, at about 15 GPAa, the onset of a partial molecular-association phase (HP1) is first observed. In HP1 two out of the four iodines strongly overlap to form linear chains of GeI 4 . The HP1 phase coexists with the low pressure (LP) molecular phase, but its population increases with increasing pressure. At P ∼20 GPa a second high pressure phase (HP2) is identified where all four iodines strongly overlap to form a three dimensional, fully molecular-associated structure. With increasing pressure and at P > 20 GPa, HP2 is the only phase up to P = 34 GPa, the highest pressure used. A significant hysteresis of the relative abundances with pressure is observed. The isomer shift of the HP2 and HP1 structures is considerably larger than that of the LP one. 11 refs., 3 figs

High pressure 129I Moessbauer studies of GeI4 molecular crystals

International Nuclear Information System (INIS)

Pasternak, M.P.; Los Alamos National Lab.; Taylor, R.D.

1990-01-01

The Moessbauer effect in 129 I in cunjunction with Diamond-Anvil-Cell high pressure techniques was applied to investigate the high pressure phase(s) of the molecular crystal GeI 4 . The 129 I Quadrupole Interaction was the main probe for characterizing the intermolecular structural transformation with pressure. With increasing pressure, at about 15 GPa, the onset of a partial molecular-association phase (HP1) is first observed. In HP1 two out of the four iodines strongly overlap to form linear chains of GeI 4 . The HP1 phase coexists with the low pressure (LP) molecular phase, but its population increases with increasing pressure. At P≅20 GPa a second high pressure phase (HP2) is identified where all four iodines strongly overlap to form a three dimensional, fully molecular-associated structure. With increasing pressure and at P>20 GPa, HP2 is the only phase up to P=34 GPa, the highest pressure used. A significant hysteresis of the relative abundances with pressure is observed. The isomer shift of the HP2 and HP1 structures is considerably larger than that of the LP one. (orig.)

High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

International Nuclear Information System (INIS)

Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

2008-01-01

This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

International Nuclear Information System (INIS)

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

2006-01-01

Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

Assessment of radiochemical purity of [{sup 18}F]fludeoxyglucose by high pressure liquid chromatography (HPLC)

Energy Technology Data Exchange (ETDEWEB)

Lacerda, Aline E.; Silva, Juliana B.; Silveira, Marina B.; Ferreira, Soraya Z., E-mail: radiofarmacoscdtn@cdtn.b [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil). Unidade de Pesquisa e Producao de Radiofarmacos

2011-07-01

The quality control of [{sup 18}F]fludeoxyglucose ({sup 18}FDG) has received attention due to its increasing clinical use. Although the quality requirements of {sup 18}FDG are established in various pharmacopoeia, the suitability of all testing methods used should be verified under actual conditions of use and documented. The aim of this study was to develop a high pressure liquid chromatography (HPLC) method for radiochemical purity evaluation of {sup 18}FDG, based on pharmacopoeia references, and to verify its suitability for routine quality control in our centre. HPLC analysis was performed with an Agilent HPLC. {sup 18}FDG and impurities were separated on an anion-exchange column by isocratic elution with 0.1 M NaOH as the mobile phase. Detection was accomplished with refractive index and NaI (Tl) scintillation detectors. The flow rate of the mobile phase was set at 0.8 mL/min and the column temperature was kept at 35 deg C. Specificity, linearity, precision and robustness were assessed to verify if the method was adequate for its intended purpose. Retention time of {sup 18}FDG was not affected by the presence of other components of the formulation and a good peak resolution was achieved. The analytical curve of {sup 18}FDG was linear, with a correlation coefficient value of 0.9995. Intraday repeatable precision, reported as the relative standard deviation, was 0.11%. Analytical procedure remained unaffected by small variations in mobile phase flow rate. Results evidenced that HPLC is suitable for radiochemical purity evaluation of {sup 18}FDG, considering operational conditions of our laboratory. (author)

High-purity germanium detection system for the in vivo measurement of americium and plutonium

International Nuclear Information System (INIS)

Tyree, W.H.; Falk, R.B.; Wood, C.B.; Liskey, R.W.

1976-01-01

A high-purity germanium (HPGe) array, photon-counting system has been developed for the Rocky Flats Plant Body-Counter Medical Facility. The newly improved system provides exceptional resolutions of low-energy X-ray and gamma-ray spectra associated with the in vivo deposition of plutonium and americium. Described are the operational parameters of the system and some qualitative results illustrating detector performance for the photon emissions produced from the decay of plutonium and americium between energy ranges from 10 to 100 kiloelectron volts. Since large amounts of data are easily generated with the system, data storage, analysis, and computer software developments continue to be an essential ingredient for processing spectral data obtained from the detectors. Absence of quantitative data is intentional. The primary concern of the study was to evaluate the effects of the various physical and electronic operational parameters before adding those related entirely to a human subject

Distribution and Substitution Mechanism of Ge in a Ge-(Fe-Bearing Sphalerite

Directory of Open Access Journals (Sweden)

Nigel J. Cook

2015-03-01

Full Text Available The distribution and substitution mechanism of Ge in the Ge-rich sphalerite from the Tres Marias Zn deposit, Mexico, was studied using a combination of techniques at μm- to atomic scales. Trace element mapping by Laser Ablation Inductively Coupled Mass Spectrometry shows that Ge is enriched in the same bands as Fe, and that Ge-rich sphalerite also contains measurable levels of several other minor elements, including As, Pb and Tl. Micron- to nanoscale heterogeneity in the sample, both textural and compositional, is revealed by investigation using Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM combined with Synchrotron X-ray Fluorescence mapping and High-Resolution Transmission Electron Microscopy imaging of FIB-prepared samples. Results show that Ge is preferentially incorporated within Fe-rich sphalerite with textural complexity finer than that of the microbeam used for the X-ray Absorption Near Edge Structure (XANES measurements. Such heterogeneity, expressed as intergrowths between 3C sphalerite and 2H wurtzite on  zones, could be the result of either a primary growth process, or alternatively, polystage crystallization, in which early Fe-Ge-rich sphalerite is partially replaced by Fe-Ge-poor wurtzite. FIB-SEM imaging shows evidence for replacement supporting the latter. Transformation of sphalerite into wurtzite is promoted by (111* twinning or lattice-scale defects, leading to a heterogeneous ZnS sample, in which the dominant component, sphalerite, can host up to ~20% wurtzite. Ge K-edge XANES spectra for this sphalerite are identical to those of the germanite and argyrodite standards and the synthetic chalcogenide glasses GeS2 and GeSe2, indicating the Ge formally exists in the tetravalent form in this sphalerite. Fe K-edge XANES spectra for the same sample indicate that Fe is present mainly as Fe2+, and Cu K-edge XANES spectra are characteristic for Cu+. Since there is no evidence for coupled substitution involving a monovalent

The flow stress of high-purity refractory body-centred cubic metals and its modification by atomic defects

International Nuclear Information System (INIS)

Seeger, A.

1995-01-01

The strong temperature and strain-rate dependence of the flow stress of high-purity refractory body-centred cubic metals has been shown to be an intrinsic property and is usually ascribed to a high Peierls barrier of a o left angle 111 right angle /2 screw dislocations. These barriers are overcome by the formation of kink pairs on the screw dislocations. The paper reports on recent, very complete flow-stress data on ultra-high purity Mo crystals obtained by two different experimental techniques and covering the temperature range 4 K to 460 K. The results are in accord with earlier work of Brunner and Diehl on α-Fe, who showed that below the so-called knee temperature, T K , three regimes in the temperature variation of the flow-stress should be distinguished. Two of them are fully accounted for by the same glide mechanism, namely elementary glide steps on {211} planes. The so-called upper bend separating these two regimes in an inherent feature of the theory of kink-pair formation and does not indicate a change in the glide mechanism. There is, however, strong evidence that the so-called lower bend, separating the range of {211} elementary glide steps from the low-temperature flow-stress regime, is due to a change in the glide mechanism. It is argued that at the lower bend the screw-dislocation cores undergo a ''first-order phase transition'' from a low-temperature configuration that allows glide of a given screw dislocation on any of its three {110} glide planes to a high-temperature configuration that can glide only on one definite {211} plane. Between T K and the lower-bend temperature, T, bcc metals may show the unique phenomena of alloy and irradiation softening. With regard to the latter phenomenon, Brunner and Diehl distinguish between ''primary'' and ''secondary'' softening. It is shown that alloy softening and the ''secondary irradiation softening'' of bcc metals may be explained by an ''overheating'' of the phase transition in the dislocation core. (orig./WL)

CH 3 NH 3 PbI 3 /GeSe bilayer heterojunction solar cell with high performance

Science.gov (United States)

Hou, Guo-Jiao; Wang, Dong-Lin; Ali, Roshan; Zhou, Yu-Rong; Zhu, Zhen-Gang; Su, Gang

2018-01-01

Perovskite (CH3NH3PbI3) solar cells have made significant advances recently. In this paper, we propose a bilayer heterojunction solar cell comprised of a perovskite layer combining with a IV-VI group semiconductor layer, which can give a conversion efficiency even higher than the conventional perovskite solar cell. Such a scheme uses a property that the semiconductor layer with a direct band gap can be better in absorption of long wavelength light and is complementary to the perovskite layer. We studied the semiconducting layers such as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is the best, where the optical absorption efficiency in the perovskite/GeSe solar cell is dramatically increased. It turns out that the short circuit current density is enhanced 100% and the power conversion efficiency is promoted 42.7% (to a high value of 23.77%) larger than that in a solar cell with only single perovskite layer. The power conversion efficiency can be further promoted so long as the fill factor and open-circuit voltage are improved. This strategy opens a new way on developing the solar cells with high performance and practical applications.

Structure of Ge(100) surfaces for high-efficiency photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Olson, J.M.; McMahon, W.E. [National Renewable Energy Lab., Golden, CO (United States)

1998-09-01

While much is known about the Ge(100) surface in a UHV/MBE environment, little has been published about this surface in an MOCVD environment. The main objective of this study is to determine the structure of the surface of Ge substrates in the typical MOCVD reactor immediately prior to and following the heteronucleation of GaAs and other lattice-matched III-V alloys, and to determine the conditions necessary for the growth of device-quality epilayers. In this paper the authors present the first STM images of the MOCVD-prepared Ge surfaces. Although many of the observed features are very similar to UHV- or MBE-prepared surfaces, there are distinct and important differences. For example, while the As-terminated surfaces for MBE-Ge and MOCVD-Ge are virtually identical, the AsH{sub 3}-treated surfaces in an MOCVD reactor are quite different. The terrace reconstruction is rotated by {pi}/2, and significant step bunching or faceting is also observed. Time-dependent RD kinetic studies also reveal, for the first time, several interesting features: the transition rate from an As-terminated (1 x 2) terrace reconstruction to a stable AsH{sub 3}-annealed surface is a function of the substrate temperature, substrate miscut from (100) and AsH{sub 3} partial pressure, and, for typical prenucleation conditions, is relatively slow. These results explain many of the empirically derived nucleation conditions that have been devised by numerous groups.

Certification of caffeine reference material purity by ultraviolet/visible spectrophotometry and high-performance liquid chromatography with diode-array detection as two independent analytical methods.

Science.gov (United States)

Shehata, A B; Rizk, M S; Rend, E A

2016-10-01

Caffeine reference material certified for purity is produced worldwide, but no research work on the details of the certification process has been published in the literature. In this paper, we report the scientific details of the preparation and certification of pure caffeine reference materials. Caffeine was prepared by extraction from roasted and ground coffee by dichloromethane after heating in deionized water mixed with magnesium oxide. The extract was purified, dried, and bottled in dark glass vials. Stratified random selection was applied to select a number of vials for homogeneity and stability studies, which revealed that the prepared reference material is homogeneous and sufficiently stable. Quantification of caffeine purity % was carried out using a calibrated UV/visible spectrophotometer and a calibrated high-performance liquid chromatography with diode-array detection method. The results obtained from both methods were combined to drive the certified value and its associated uncertainty. The certified value of the reference material purity was found to be 99.86% and its associated uncertainty was ±0.65%, which makes the candidate reference material a very useful calibrant in food and drug chemical analysis. Copyright © 2016. Published by Elsevier B.V.

Certification of caffeine reference material purity by ultraviolet/visible spectrophotometry and high-performance liquid chromatography with diode-array detection as two independent analytical methods

Directory of Open Access Journals (Sweden)

A.B. Shehata

2016-10-01

Full Text Available Caffeine reference material certified for purity is produced worldwide, but no research work on the details of the certification process has been published in the literature. In this paper, we report the scientific details of the preparation and certification of pure caffeine reference materials. Caffeine was prepared by extraction from roasted and ground coffee by dichloromethane after heating in deionized water mixed with magnesium oxide. The extract was purified, dried, and bottled in dark glass vials. Stratified random selection was applied to select a number of vials for homogeneity and stability studies, which revealed that the prepared reference material is homogeneous and sufficiently stable. Quantification of caffeine purity % was carried out using a calibrated UV/visible spectrophotometer and a calibrated high-performance liquid chromatography with diode-array detection method. The results obtained from both methods were combined to drive the certified value and its associated uncertainty. The certified value of the reference material purity was found to be 99.86% and its associated uncertainty was ±0.65%, which makes the candidate reference material a very useful calibrant in food and drug chemical analysis.

Radioactive preparations. Determination of radiochemical purity by thin-layer chromatography

International Nuclear Information System (INIS)

1986-01-01

The standard sets the data which must be attached to every sample, and the equipment, chemicals and auxiliary substances used in the determination of radiochemical purity of substances by chromatography. Described are preparation of the sample, the procedure of sample deposition, the development, drying and detection of the radioactive preparation. The qualitative and quantitative assessment of the radiochromatogram is described as are the calculation of radiochemical purity and the determination of the reproducibility of measurement of radiochemical purity of radioactive preparations. (E.S.)

High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

Energy Technology Data Exchange (ETDEWEB)

Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

2008-12-05

This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

Purity of Gaussian states: Measurement schemes and time evolution in noisy channels

International Nuclear Information System (INIS)

Paris, Matteo G.A.; Illuminati, Fabrizio; Serafini, Alessio; De Siena, Silvio

2003-01-01

We present a systematic study of the purity for Gaussian states of single-mode continuous variable systems. We prove the connection of purity to observable quantities for these states, and show that the joint measurement of two conjugate quadratures is necessary and sufficient to determine the purity at any time. The statistical reliability and the range of applicability of the proposed measurement scheme are tested by means of Monte Carlo simulated experiments. We then consider the dynamics of purity in noisy channels. We derive an evolution equation for the purity of general Gaussian states both in thermal and in squeezed thermal baths. We show that purity is maximized at any given time for an initial coherent state evolving in a thermal bath, or for an initial squeezed state evolving in a squeezed thermal bath whose asymptotic squeezing is orthogonal to that of the input state

7 CFR 201.51b - Purity procedures for coated seed.

Science.gov (United States)

2010-01-01

... ACT FEDERAL SEED ACT REGULATIONS Purity Analysis in the Administration of the Act § 201.51b Purity...). Use of fine mesh sieves is recommended for this procedure, and stirring or shaking the coated units...

Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

International Nuclear Information System (INIS)

McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

2015-01-01

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10 −5 A/cm 2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D it ) is estimated to be as low as ∼2 × 10 12  cm −2  eV −1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D it value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications

Impact parameter analysis of proton-antiproton elastic scattering from √s=7.6 GeV to √s=546 GeV

International Nuclear Information System (INIS)

Fearnley, T.

1985-09-01

The proton-antiproton elastic profile function GAMMA (b) and inelastic overlap function Gsub(in)(b) are calculated from a coherent set of proton-antiproton elastic scattering data at Psub(L)=30 and 50 GeV/c (√s=7.6 and 9.8 GeV), and at √s=53 and 546 GeV. The energy dependence of Gsub(in)(b) is studied in the low energy regime and in the high energy regime. The increase of the inelastic cross section from 50 GeV/c to 30 GeV/c and from √s=53 GeV to √s=546 GeV is found to originate from a peripheral increase of Gsub(in) around 1 fm, accompanied by a non-negligible central increase. The proton-antiproton collision at √s=53 GeV is shown to be slightly less absorptive centrally than pp at this energy, while it is more absorptive peripherally around 1.2 fm. The inelastic overlap functions strongly disagree with the predictions of geometrical scaling and factorizing eikonal models, both in the low energy regime psub(L)=30-50 GeV/c and in the high energy regime √s=53-546 GeV

From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures

International Nuclear Information System (INIS)

Isa, Fabio; Salvalaglio, Marco; Dasilva, Yadira Arroyo Rojas; Jung, Arik; Isella, Giovanni; Erni, Rolf; Niedermann, Philippe; Gröning, Pierangelo; Montalenti, Francesco; Känel, Hans von

2016-01-01

We present a detailed experimental and theoretical analysis of the epitaxial stress relaxation process in micro-structured compositionally graded alloys. We focus on the pivotal SiGe/Si(001) system employing patterned Si substrates at the micrometre-size scale to address the distribution of threading and misfit dislocations within the heterostructures. SiGe alloys with linearly increasing Ge content were deposited by low energy plasma enhanced chemical vapour deposition resulting in isolated, tens of micrometre tall 3D crystals. We demonstrate that complete elastic relaxation is achieved by appropriate choice of the Ge compositional grading rate and Si pillar width. We investigate the nature and distribution of dislocations along the [001] growth direction in SiGe crystals by transmission electron microscopy, chemical defect etching and etch pit counting. We show that for 3 μm wide Si pillars and a Ge grading rate of 1.5% μm −1 , only misfit dislocations are present while their fraction is reduced for higher Ge grading rates and larger structures due to dislocation interactions. The experimental results are interpreted with the help of theoretical calculations based on linear elasticity theory describing the competition between purely elastic and plastic stress relaxation with increasing crystal width and Ge compositional grading rate.

Comparison between bulk and thin foil ion irradiation of ultra high purity Fe

Energy Technology Data Exchange (ETDEWEB)

Prokhodtseva, A., E-mail: anna.prokhodtseva@psi.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherches en Physique des Plasmas, Association Euratom-Confédération Suisse, 5232 Villigen PSI (Switzerland); Décamps, B. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), CNRS-IN2P3-Univ. Paris-Sud 11, UMR 8609, Bât. 108, 91405 Orsay (France); Schäublin, R. [Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherches en Physique des Plasmas, Association Euratom-Confédération Suisse, 5232 Villigen PSI (Switzerland)

2013-11-15

Accumulation of radiation damage in ultra high purity iron under self ion irradiation without and with simultaneous He implantation was investigated in bulk and thin foil form to assess, on the one hand, the effect of free surfaces and, on the other hand, the influence of He. Specimens were irradiated at room temperature to a dose of 0.8 dpa and ∼900 appm He content. We found in thin foils after irradiation with single beam a majority of a{sub 0} 〈1 0 0〉 type loops, while in the presence of He it is the ½ a{sub 0} 〈1 1 1〉 type loops that prevail. In single beam irradiated bulk samples most of the loops are of ½ a{sub 0} 〈1 1 1〉 type. In both bulk and thin foils density of defects visible in transmission electron microscope is considerably higher when He is implanted with prevailing ½ a{sub 0} 〈1 1 1〉 dislocation loops, indicating that He stabilizes them.

Optimization of extraction of high purity all-trans-lycopene from tomato pulp waste.

Science.gov (United States)

Poojary, Mahesha M; Passamonti, Paolo

2015-12-01

The aim of this work was to optimize the extraction of pure all-trans-lycopene from the pulp fractions of tomato processing waste. A full factorial design (FFD) consisting of four independent variables including extraction temperature (30-50 °C), time (1-60 min), percentage of acetone in n-hexane (25-75%, v/v) and solvent volume (10-30 ml) was used to investigate the effects of process variables on the extraction. The absolute amount of lycopene present in the pulp waste was found to be 0.038 mg/g. The optimal conditions for extraction were as follows: extraction temperature 20 °C, time 40 min, a solvent composition of 25% acetone in n-hexane (v/v) and solvent volume 40 ml. Under these conditions, the maximal recovery of lycopene was 94.7%. The HPLC-DAD analysis demonstrated that, lycopene was obtained in the all-trans-configuration at a very high purity grade of 98.3% while the amount of cis-isomers and other carotenoids were limited. Copyright © 2015 Elsevier Ltd. All rights reserved.

Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

International Nuclear Information System (INIS)

Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

2008-01-01

Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

Trace radioactive measurement in foodstuffs using high purity germanium detector

International Nuclear Information System (INIS)

Morco, Ryan P.; Racho, Joseph Michael D.; Castaneda, Soledad S.; Almoneda, Rosalina V.; Pabroa, Preciosa Corazon B.; Sucgang, Raymond J.

2010-01-01

Trace radioactivity in food has been seriously considered sources of potential harm after the accidental radioactive releases in the last decades which led to contamination of the food chain. Countermeasures are being used to reduce the radiological health risk to the population and to ensure that public safety and international commitments are met. Investigation of radioactive traces in foods was carried out by gamma-ray spectrometry. The radionuclides being measured were fission products 1 37Cs and 1 34Cs and naturally occurring 4 0Κ. Gamma-ray measurements were performed using a hybrid gamma-ray counting system with coaxial p-type Tennelec High Purity Germanium (HPGe) detector with relative efficiency of 18.4%. Channels were calibrated to energies using a standard check source with 1 37Cs and 6 0Co present. Self-shielding within samples was taken into account by comparing directly with reference standards of similar matrix and geometry. Efficiencies of radionuclides of interests were accounted in calculating the activity concentrations in the samples. Efficiency calibration curve was generated using an in-house validated program called FINDPEAK, a least-square method that fits a polynomial up to sixth-order of equation. Lower Limits of Detection (LLD) obtained for both 1 37Cs and 1 34Cs ranges from 1-6 Bq/Kg depending on the sample matrix. In the last five years, there have been no foodstuffs analyzed exceeded the local and international regulatory limit of 1000Bq/Kg for the summed activities of 1 37Cs and 1 34Cs. (author)

Measurement of the high-field Q-drop in a high-purity large-grain niobium cavity for different oxidation processes

Energy Technology Data Exchange (ETDEWEB)

Ciovati, Gianluigi; Kneisel, Peter; gurevich, alex

2007-06-01

The most challenging issue for understanding the performance of superconducting radio-frequency (rf) cavities made of high-purity (residual resistivity ratio > 200) niobium is due to a sharp degradation (“Q-drop”) of the cavity quality factor Q0(Bp) as the peak surface magnetic field (Bp) exceeds about 90 mT, in the absence of field emission. In addition, a low-temperature (100 – 140 C) “in-situ” baking of the cavity was found to be beneficial in reducing the Q-drop. In this contribution, we present the results from a series of rf tests at 1.7 K and 2.0 K on a single-cell cavity made of high-purity large (with area of the order of few cm2) grain niobium which underwent various oxidation processes, after initial buffered chemical polishing, such as anodization, baking in pure oxygen atmosphere and baking in air up to 180 °C, with the objective of clearly identifying the role of oxygen and the oxide layer on the Q-drop. During each rf test a temperature mapping system allows measuring the local temperature rise of the cavity outer surface due to rf losses, which gives information about the losses location, their field dependence and space distribution. The results confirmed that the depth affected by baking is about 20 – 30 nm from the surface and showed that the Q-drop did not re-appear in a previously baked cavity by further baking at 120 °C in pure oxygen atmosphere or in air up to 180 °C. These treatments increased the oxide thickness and oxygen concentration, measured on niobium samples which were processed with the cavity and were analyzed with Transmission Electron Microscope (TEM) and Secondary Ion Mass Spectroscopy (SIMS). Nevertheless, the performance of the cavity after air baking at 180 °C degraded significantly and the temperature maps showed high losses, uniformly distributed on the surface, which could be completely recovered only by a post-purification treatment at 1250 °C. A statistic of the position of the “hot-spots” on the

Measurement of the high-field Q drop in a high-purity large-grain niobium cavity for different oxidation processes

Directory of Open Access Journals (Sweden)

G. Ciovati

2007-06-01

Full Text Available The most challenging issue for understanding the performance of superconducting radio-frequency (rf cavities made of high-purity (residual resistivity ratio >200 niobium is due to a sharp degradation (“Q-drop” of the cavity quality factor Q_{0}(B_{p} as the peak surface magnetic field (B_{p} exceeds about 90 mT, in the absence of field emission. In addition, a low-temperature (100–140°C in situ baking of the cavity was found to be beneficial in reducing the Q-drop. In this contribution, we present the results from a series of rf tests at 1.7 and 2.0 K on a single-cell cavity made of high-purity large (with area of the order of few cm^{2} grain niobium which underwent various oxidation processes, after initial buffered chemical polishing, such as anodization, baking in pure oxygen atmosphere, and baking in air up to 180°C, with the objective of clearly identifying the role of oxygen and the oxide layer on the Q-drop. During each rf test a temperature mapping system allows measuring the local temperature rise of the cavity outer surface due to rf losses, which gives information about the losses location, their field dependence, and space distribution. The results confirmed that the depth affected by baking is about 20–30 nm from the surface and showed that the Q-drop did not reappear in a previously baked cavity by further baking at 120°C in pure oxygen atmosphere or in air up to 180°C. These treatments increased the oxide thickness and oxygen concentration, measured on niobium samples which were processed with the cavity and were analyzed with transmission electron microscope and secondary ion mass spectroscopy. Nevertheless, the performance of the cavity after air baking at 180°C degraded significantly and the temperature maps showed high losses, uniformly distributed on the surface, which could be completely recovered only by a postpurification treatment at 1250°C. A statistic of the position of the “hot spots” on the

The Liquid Argon Purity Demonstrator

Energy Technology Data Exchange (ETDEWEB)

Adamowski, M.; Carls, B.; Dvorak, E.; Hahn, A.; Jaskierny, W.; Johnson, C.; Jostlein, H.; Kendziora, C.; Lockwitz, S.; Pahlka, B.; Plunkett, R.; Pordes, S.; Rebel, B.; Schmitt, R.; Stancari, M.; Tope, T.; Voirin, E.; Yang, T.

2014-07-01

The Liquid Argon Purity Demonstrator was an R&D test stand designed to determine if electron drift lifetimes adequate for large neutrino detectors could be achieved without first evacuating the cryostat. We describe here the cryogenic system, its operations, and the apparatus used to determine the contaminant levels in the argon and to measure the electron drift lifetime. The liquid purity obtained by this system was facilitated by a gaseous argon purge. Additionally, gaseous impurities from the ullage were prevented from entering the liquid at the gas-liquid interface by condensing the gas and filtering the resulting liquid before returning to the cryostat. The measured electron drift lifetime in this test was greater than 6 ms, sustained over several periods of many weeks. Measurements of the temperature profile in the argon, to assess convective flow and boiling, were also made and are compared to simulation.

Blue and green emissions with high color purity from nanocrystalline Ca2Gd8Si6O26:Ln (Ln = Tm or Er) phosphors

International Nuclear Information System (INIS)

Seeta Rama Raju, G.; Park, Jin Young; Jung, Hong Chae; Pavitra, E.; Moon, Byung Kee; Jeong, Jung Hyun; Yu, Jae Su; Kim, Jung Hwan; Choi, Haeyoung

2011-01-01

Graphical abstract: Highlights: → Nanocrystalline Ca 2 Gd 8 Si 6 O 26 (CGS):Tm 3+ and CGS:Er 3+ phosphors were prepared by solvothermal reaction method. → The visible luminescence properties of phosphors were investigated by exciting with ultraviolet (UV) or near-UV light and low voltage electron beam (0.5-5 kV). → The photoluminescence spectra of CGS:Tm 3+ under 359 nm excitation and CGS:Er 3+ under 380 nm excitation showed the strong blue ( 1 D 2 → 3 F 4 at 456 nm) and green ( 4 S 3/2 → 4 I 15/2 at 550 nm) colors with the color purity 87% and 96%, respectively → The low accelerating voltage cathodoluminescence spectra of CGS:Tm 3+ and CGS:Er 3+ showed the strong blue and green emissions with the high color purity 95% and 96%, respectively. → The obtained results are hint at the promising applications to produce high quality LEDs and FED devices. - Abstract: Blue and green light emissive nanocrystalline Ca 2 Gd 8 Si 6 O 26 (CGS):Tm 3+ and CGS:Er 3+ phosphors with high color purity were prepared by solvothermal reaction method. The structural and morphological properties of these phosphors were evaluated by the powder X-ray diffraction (XRD) and scanning electron microscopy, respectively. From the XRD results, Tm 3+ :CGS and Er 3+ :CGS phosphors had the characteristic peaks of oxyapatite in the hexagonal lattice structure. The visible luminescence properties of phosphors were obtained by ultraviolet (UV) or near-UV light and low voltage electron beam (0.5-5 kV) excitation. The photoluminescence and cathodoluminescence properties were investigated by changing the variation of Tm 3+ or Er 3+ concentrations and the acceleration voltage, respectively. The CGS:Tm 3+ phosphors exhibited the blue emission due to 1 D 2 → 3 F 4 transition, while the CGS:Er 3+ phosphors showed the green emission due to 4 S 3/2 → 4 I 15/2 transition. The color purity and chromaticity coordinates of the fabricated phosphors are comparable to or better than those of standard

P-West High Intensity Secondary Beam Area Design Report

Energy Technology Data Exchange (ETDEWEB)

Cox, A.; Currier, R.; Eartly, D.; Guthke, A.; Johnson, G.; Lee, D.; Dram, R.; Villegas, E.; Rest, J.; Tilles, E.; Vander Arend, P.

1977-03-01

This report gives the initial design parameters of a 1000 GeV High Intensity Superconducting Secondary Beam Laboratory to be situated in the Proton Area downstream of the existing Proton West experimental station. The area will provide Fermilab with a major capability for experimentation with pion and antiproton beams of intensities and of energies available at no other laboratory and with an electron beam with excellent spot size, intensity, and purity at energies far above that available at electron machines. Detailed beam design, area layouts, and cost estimates are presented, along with the design considerations.

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Science.gov (United States)

Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

2014-12-01

High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

Determination of trace impurities in high purity water by emission spectroscopy and flame photometry

International Nuclear Information System (INIS)

Charbel, M.Y.; Lordello, A.R.

1985-01-01

A spectrochemical method for the determination of trace amounts of Fe, Mg, Mn, Sn, Cr, Bi, Ni, Ca, Na, Zn, Sr, Al, Ba and Cu in high purity water is described. In addition Na, Li and K are measured by flame photometry. The standards used in the spectrochemical method are prepared by evaporation in hot plate of 50 mL standard solution in Teflon becker to dryness, the residue being dissolved with 500 μL hot HCl (1:1). Four hundred μL of this solution is evaporated under infra-red lamp on Apiezon treated flat top graphite electrodes. The residue is submitted to a direct current arc excitation. The accuracy is estimated by the spectrochemical method with a direct procedure sample preparation. The relative standard deviation varies from +- 4% to +- 27%. For the elements Na, Li and K standard solutions are concentrated fiftyfold by a simple evaporation procedure and then measured by flame photometry. The standard deviation and accuracy are given. (Author) [pt

Simulation for photon detection in spectrometric system of high purity (HPGe) using MCNPX code

International Nuclear Information System (INIS)

Correa, Guilherme Jorge de Souza

2013-01-01

The Brazilian National Commission of Nuclear Energy defines parameters for classification and management of radioactive waste in accordance with the activity of materials. The efficiency of a detection system is crucial to determine the real activity of a radioactive source. When it's possible, the system's calibration should be performed using a standard source. Unfortunately, there are only a few cases that it can be done this way, considering the difficulty of obtaining appropriate standard sources for each type of measurement. So, computer simulations can be performed to assist in calculating of the efficiency of the system and, consequently, also auxiliary the classification of radioactive waste. This study aims to model a high purity germanium (HPGe) detector with MCNPX code, approaching the spectral values computationally obtained of the values experimentally obtained for the photopeak of 137 Cs. The approach will be made through changes in outer dead layer of the germanium crystal modeled. (author)

Selective growth of Ge nanowires by low-temperature thermal evaporation.

Science.gov (United States)

Sutter, Eli; Ozturk, Birol; Sutter, Peter

2008-10-29

High-quality single-crystalline Ge nanowires with electrical properties comparable to those of bulk Ge have been synthesized by vapor-liquid-solid growth using Au growth seeds on SiO(2)/Si(100) substrates and evaporation from solid Ge powder in a low-temperature process at crucible temperatures down to 700 °C. High nanowire growth rates at these low source temperatures have been identified as being due to sublimation of GeO from substantial amounts of GeO(2) on the powder. The Ge nanowire synthesis from GeO is highly selective at our substrate temperatures (420-500 °C), i.e., occurs only on Au vapor-liquid-solid growth seeds. For growth of nanowires of 10-20 µm length on Au particles, an upper bound of 0.5 nm Ge deposition was determined in areas of bare SiO(2)/Si substrate without Au nanoparticles.