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Sample records for high power thin

  1. A high power ZnO thin film piezoelectric generator

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  2. Cutting-Edge High-Power Ultrafast Thin Disk Oscillators

    Thomas Südmeyer

    2013-04-01

    Full Text Available A growing number of applications in science and industry are currently pushing the development of ultrafast laser technologies that enable high average powers. SESAM modelocked thin disk lasers (TDLs currently achieve higher pulse energies and average powers than any other ultrafast oscillator technology, making them excellent candidates in this goal. Recently, 275 W of average power with a pulse duration of 583 fs were demonstrated, which represents the highest average power so far demonstrated from an ultrafast oscillator. In terms of pulse energy, TDLs reach more than 40 μJ pulses directly from the oscillator. In addition, another major milestone was recently achieved, with the demonstration of a TDL with nearly bandwidth-limited 96-fs long pulses. The progress achieved in terms of pulse duration of such sources enabled the first measurement of the carrier-envelope offset frequency of a modelocked TDL, which is the first key step towards full stabilization of such a source. We will present the key elements that enabled these latest results, as well as an outlook towards the next scaling steps in average power, pulse energy and pulse duration of such sources. These cutting-edge sources will enable exciting new applications, and open the door to further extending the current performance milestones.

  3. Efficient analysis for nonlinear microwave characteristics of high-power HTS thin film microstrip resonators

    Kedar, Ashutosh; Kataria, N D

    2005-01-01

    This paper investigates the nonlinear effects of high-T c superconducting (HTS) thin film in high-power applications. A nonlinear model for complex surface impedance has been proposed for the efficient analysis of the nonlinearity of HTS thin films. Further, using the developed model, analysis of HTS-MSR has been done using the spectral domain method (SDM). The SDM formulation has been modified to account for finite conductivity and thickness of HTS films by incorporating a complex resistive boundary condition. The results have been validated with the experiments performed with microstrip resonators (MSRs) based on YBa 2 Cu 3 O 7-x (YBCO) thin films made by a laser ablation technique on LaAlO 3 substrates, characterized for their characteristics, namely, resonant frequency and quality factor measured as a function of temperature and input RF power. A close agreement between the theoretical and measured results has been achieved validating the analysis

  4. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

    Lee, Sungsik; Nathan, Arokia

    2016-10-01

    The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (400) that was both bias and geometry independent. The transistor reported here is useful for sensor interface circuits in wearable devices where high current sensitivity and ultralow power are vital for battery-less operation.

  5. Efficient analysis for nonlinear microwave characteristics of high-power HTS thin film microstrip resonators

    Kedar, Ashutosh [RADL Division, Electronics and Radar Development Establishment, C V Raman Nagar, Bangalore-560093 (India); Kataria, N D [National Physical Laboratory, New Delhi (India)

    2005-08-01

    This paper investigates the nonlinear effects of high-T{sub c} superconducting (HTS) thin film in high-power applications. A nonlinear model for complex surface impedance has been proposed for the efficient analysis of the nonlinearity of HTS thin films. Further, using the developed model, analysis of HTS-MSR has been done using the spectral domain method (SDM). The SDM formulation has been modified to account for finite conductivity and thickness of HTS films by incorporating a complex resistive boundary condition. The results have been validated with the experiments performed with microstrip resonators (MSRs) based on YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) thin films made by a laser ablation technique on LaAlO{sub 3} substrates, characterized for their characteristics, namely, resonant frequency and quality factor measured as a function of temperature and input RF power. A close agreement between the theoretical and measured results has been achieved validating the analysis.

  6. A new automatic design method to develop multilayer thin film devices for high power laser applications

    Sahoo, N.K.; Apparao, K.V.S.R.

    1992-01-01

    Optical thin film devices play a major role in many areas of frontier technology like development of various laser systems to the designing of complex and precision optical systems. Design and development of these devices are really challenging when they are meant for high power laser applications. In these cases besides desired optical characteristics, the devices are expected to satisfy a whole range of different needs like high damage threshold, durability etc. In the present work a novel completely automatic design method based on Modified Complex Method has been developed for designing of high power thin film devices. Unlike most of the other methods it does not need any suitable starting design. A quarterwave design is sufficient to start with. If required, it is capable of generating its own starting design. The computer code of the method is very simple to implement. This report discusses this novel automatic design method and presents various practicable output designs generated by it. The relative efficiency of the method along with other powerful methods has been presented while designing a broadband IR antireflection coating. The method is also incorporated with 2D and 3D electric field analysis programmes to produce high damage threshold designs. Some experimental devices developed using such designs are also presented in the report. (author). 36 refs., 41 figs

  7. Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors.

    Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li

    2011-09-01

    Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors.

  8. Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

    Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

    2013-01-01

    Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered films • TiO 2 films with high refractive index are obtained without post-growth annealing

  9. A self-powered thin-film radiation detector using intrinsic high-energy current

    Zygmanski, Piotr, E-mail: pzygmanski@LROC.HARVARD.EDU, E-mail: Erno-Sajo@uml.edu [Department of Radiation Oncology, Brigham and Women’s Hospital, Dana-Farber Cancer Institute and Harvard Medical School, Boston, Massachusetts 02115 (United States); Sajo, Erno, E-mail: pzygmanski@LROC.HARVARD.EDU, E-mail: Erno-Sajo@uml.edu [Department of Physics and Applied Physics, Medical Physics Program, University of Massachusetts Lowell, Lowell, Massachusetts 01854 (United States)

    2016-01-15

    Purpose: The authors introduce a radiation detection method that relies on high-energy current (HEC) formed by secondary charged particles in the detector material, which induces conduction current in an external readout circuit. Direct energy conversion of the incident radiation powers the signal formation without the need for external bias voltage or amplification. The detector the authors consider is a thin-film multilayer device, composed of alternating disparate electrically conductive and insulating layers. The optimal design of HEC detectors consists of microscopic or nanoscopic structures. Methods: Theoretical and computational developments are presented to illustrate the salient properties of the HEC detector and to demonstrate its feasibility. In this work, the authors examine single-sandwiched and periodic layers of Cu and Al, and Au and Al, ranging in thickness from 100 nm to 300 μm and separated by similarly sized dielectric gaps, exposed to 120 kVp x-ray beam (half-value thickness of 4.1 mm of Al). The energy deposition characteristics and the high-energy current were determined using radiation transport computations. Results: The authors found that in a dual-layer configuration, the signal is in the measurable range. For a defined total detector thickness in a multilayer structure, the signal sharply increases with decreasing thickness of the high-Z conductive layers. This paper focuses on the computational results while a companion paper reports the experimental findings. Conclusions: Significant advantages of the device are that it does not require external power supply and amplification to create a measurable signal; it can be made in any size and geometry, including very thin (sub-millimeter to submicron) flexible curvilinear forms, and it is inexpensive. Potential applications include medical dosimetry (both in vivo and external), radiation protection, and other settings where one or more of the above qualities are desired.

  10. High Thermoelectric Power Factor Organic Thin Films through Combination of Nanotube Multilayer Assembly and Electrochemical Polymerization.

    Culebras, Mario; Cho, Chungyeon; Krecker, Michelle; Smith, Ryan; Song, Yixuan; Gómez, Clara M; Cantarero, Andrés; Grunlan, Jaime C

    2017-02-22

    In an effort to produce effective thermoelectric nanocomposites with multiwalled carbon nanotubes (MWCNT), layer-by-layer assembly was combined with electrochemical polymerization to create synergy that would produce a high power factor. Nanolayers of MWCNT stabilized with poly(diallyldimethylammonium chloride) or sodium deoxycholate were alternately deposited from water. Poly(3,4-ethylene dioxythiophene) [PEDOT] was then synthesized electrochemically by using this MWCNT-based multilayer thin film as the working electrode. Microscopic images show a homogeneous distribution of PEDOT around the MWCNT. The electrical resistance, conductivity (σ) and Seebeck coefficient (S) were measured before and after the PEDOT polymerization. A 30 bilayer MWCNT film (<1 μm thick) infused with PEDOT is shown to achieve a power factor (PF = S 2 σ) of 155 μW/m K 2 , which is the highest value ever reported for a completely organic MWCNT-based material and competitive with lead telluride at room temperature. The ability of this MWCNT-PEDOT film to generate power was demonstrated with a cylindrical thermoelectric generator that produced 5.5 μW with a 30 K temperature differential. This unique nanocomposite, prepared from water with relatively inexpensive ingredients, should open up new opportunities to recycle waste heat in portable/wearable electronics and other applications where low weight and mechanical flexibility are needed.

  11. Microstructure of ZnO thin films deposited by high power impulse magnetron sputtering

    Reed, A.N., E-mail: amber.reed.5@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Shamberger, P.J. [Department of Materials Science and Engineering, Texas A& M University, College Station, TX 77843 (United States); Hu, J.J. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Muratore, C. [Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Bultman, J.E. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Voevodin, A.A., E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States)

    2015-03-31

    High power impulse magnetron sputtering was used to deposit thin (~ 100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates heated to 150 °C. The resulting films had strong crystallinity, highly aligned (002) texture and low surface roughness (root mean square roughness less than 10 nm), as determined by X-ray diffraction, transmission electron microscopy, scanning electron microscopy and atomic force spectroscopy measurements. Deposition pressure and target–substrate distance had the greatest effect on film microstructure. The degree of alignment in the films was strongly dependent on the gas pressure. Deposition at pressures less than 0.93 Pa resulted in a bimodal distribution of grain sizes. An initial growth layer with preferred orientations (101) and (002) parallel to the interface was observed at the film–substrate interface under all conditions examined here; the extent of that competitive region was dependent on growth conditions. Time-resolved current measurements of the target and ion energy distributions, determined using energy resolved mass spectrometry, were correlated to film microstructure in order to investigate the effect of plasma conditions on film nucleation and growth. - Highlights: • Low temperature growth of nanocrystalline zinc oxide (ZnO) films. • ZnO films had a highly (002) textured, smooth, dense microstructure. • Dominant (002) orientation of films was pressure dependent. • Interfacial (101)/(002) mixed orientation layer controlled by substrate location.

  12. Ambipolar SnOx thin-film transistors achieved at high sputtering power

    Li, Yunpeng; Yang, Jia; Qu, Yunxiu; Zhang, Jiawei; Zhou, Li; Yang, Zaixing; Lin, Zhaojun; Wang, Qingpu; Song, Aimin; Xin, Qian

    2018-04-01

    SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOx TFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 °C in ambient air. X-ray-diffraction patterns showed polycrystallisation of SnO and Sn in the annealed SnOx films. Scanning-electron-microscopy images revealed that microgrooves appeared after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggest that they were most likely Sn clusters. Atomic force microscopy images indicate an abrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has generally been thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film to enhance the stoichiometric balance.

  13. Wavy channel thin film transistor architecture for area efficient, high performance and low power displays

    Hanna, Amir

    2013-12-23

    We demonstrate a new thin film transistor (TFT) architecture that allows expansion of the device width using continuous fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.5× increase in \\'ON\\' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar \\'OFF\\' current value, ~100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers an interesting opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Wavy channel Thin Film Transistor for area efficient, high performance and low power applications

    Hanna, Amir

    2014-06-01

    We report a new Thin Film Transistor (TFT) architecture that allows expansion of the device width using wavy (continuous without separation) fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.4x increase in \\'ON\\' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar \\'OFF\\' current value, similar to 100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers a pragmatic opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications without any limitation any TFT materials.

  15. High power density thin film SOFCs with YSZ/GDC bilayer electrolyte

    Cho, Sungmee; Kim, YoungNam; Kim, Jung-Hyun; Manthiram, Arumugam; Wang Haiyan

    2011-01-01

    Graphical abstract: . A: Cross-sectional TEM images show a GDC single layer and YSZ/GDC bilayer electrolyte structures. As clearly observed from TEM images, the YSZ interlayer thickness varies from ∼330 nm to ∼1 μm. B: The cell with the bilayer electrolyte (YSZ ∼330 nm) doubles the overall power output at 750 deg. C compared to that achieved in the GDC single layer cell. Display Omitted Highlights: → YSZ/ GDC bilayer thin film electrolytes were deposited by a pulsed laser deposition (PLD) technique. → Thin YSZ film as a blocking layer effectively suppresses the cell voltage drop without reducing the ionic conductivity of the electrolyte layer. → The YSZ/ GDC bilayer structure presents a feasible architecture for enhancing the overall power density and enabling chemical, mechanical, and structural stability in the cells. - Abstract: Bilayer electrolytes composed of a gadolinium-doped CeO 2 (GDC) layer (∼6 μm thickness) and an yttria-stabilized ZrO 2 (YSZ) layer with various thicknesses (∼330 nm, ∼440 nm, and ∼1 μm) were deposited by a pulsed laser deposition (PLD) technique for thin film solid oxide fuel cells (TFSOFCs). The bilayer electrolytes were prepared between a NiO-YSZ (60:40 wt.% with 7.5 wt.% carbon) anode and La 0.5 Sr 0.5 CoO 3 -Ce 0.9 Gd 0.1 O 1.95 (50:50 wt.%) composite cathode for anode-supported single cells. Significantly enhanced maximum power density was achieved, i.e., a maximum power density of 188, 430, and 587 mW cm -2 was measured in a bilayer electrolyte single cell with ∼330 nm thin YSZ at 650, 700, and 750 deg. C, respectively. The cell with the bilayer electrolyte (YSZ ∼330 nm) doubles the overall power output at 750 deg. C compared to that achieved in the GDC single layer cell. This signifies that the YSZ thin film serves as a blocking layer for preventing electrical current leakage in the GDC layer and also provides chemical, mechanical, and structural integrity in the cell, which leads to the overall enhanced

  16. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

    Hanna, A. N.; Ghoneim, M. T.; Bahabry, R. R.; Hussain, A. M.; Hussain, M. M.

    2013-01-01

    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions

  17. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

    Hanna, Amir; Ghoneim, Mohamed T.; Bahabry, Rabab R.; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2013-01-01

    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

  18. Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

    Hanna, Amir

    2013-11-26

    We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

  19. Mode-locked thin-disk lasers and their potential application for high-power terahertz generation

    Saraceno, Clara J.

    2018-04-01

    The progress achieved in the last few decades in the performance of ultrafast laser systems with high average power has been tremendous, and continues to provide momentum to new exciting applications, both in scientific research and technology. Among the various technological advances that have shaped this progress, mode-locked thin-disk oscillators have attracted significant attention as a unique technology capable of providing ultrashort pulses with high energy (tens to hundreds of microjoules) and at very high repetition rates (in the megahertz regime) from a single table-top oscillator. This technology opens the door to compact high repetition rate ultrafast sources spanning the entire electromagnetic spectrum from the XUV to the terahertz regime, opening various new application fields. In this article, we focus on their unexplored potential as compact driving sources for high average power terahertz generation.

  20. Thin-Film Power Transformers

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  1. Wavy channel Thin Film Transistor for area efficient, high performance and low power applications

    Hanna, Amir; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2014-01-01

    We report a new Thin Film Transistor (TFT) architecture that allows expansion of the device width using wavy (continuous without separation) fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor

  2. High powered pulsed plasma enhanced deposition of thin film semiconductor and optical materials

    Llewellyn, I.P.; Sheach, K.J.A.; Heinecke, R.A.

    1993-01-01

    A glow discharge deposition technique is described which allows the deposition of a large range of high quality materials without the requirement for substrate heating. The method is differentiated from conventional plasma deposition techniques in that a much higher degree of dissociation is achieved in the gases prior to deposition, such that thermally activated surface reactions are no longer required in order to produce a dense film. The necessary discharge intensity (>300Wcm -3 ) is achieved using a high power radio frequency generator which is pulsed at a low duty cycle (1%) to keep the average energy of the discharge low (100W), in order to avoid the discharge heating the substrate. In addition, by varying the gas composition between discharge pulses, layered structures of materials can be produced, with a disordered interface about 8 A thick. Various uses of the technique in semiconductor and optical filter production are described, and the properties of films deposited using these technique are presented. (orig.)

  3. A Self-Powered Thin-Film Radiation Detector Using Intrinsic High-Energy Current (HEC) (Author’s Final Version)

    2016-09-08

    of electromagnetic 85 pulse effects on cables and electrical devices4 and as a self - powered detector for in-core neutron flux measurement in nuclear...AFCEC-CX-TY-TP-2016-0003 A SELF - POWERED THIN-FILM RADIATION DETECTOR USING INTRINSIC HIGH-ENERGY CURRENT (HEC) (AUTHOR’S FINAL VERSION...14 -- 5 Oct 15 A self - powered thin-film radiation detector using intrinsic high-energy current (HEC) (Author’s Final Version) FA8051-15-P-0010

  4. Thermal characterizations analysis of high-power ThinGaN cool-white light-emitting diodes

    Raypah, Muna E.; Devarajan, Mutharasu; Ahmed, Anas A.; Sulaiman, Fauziah

    2018-03-01

    Analysis of thermal properties plays an important role in the thermal management of high-power (HP) lighting-emitting diodes (LEDs). Thermal resistance, thermal capacitance, and thermal time constant are essential parameters for the optimal design of the LED device and system, particularly for dynamic performance study. In this paper, thermal characterization and thermal time constant of ThinGaN HP LEDs are investigated. Three HP cool-white ThinGaN LEDs from different manufacturers are used in this study. A forward-voltage method using thermal transient tester (T3Ster) system is employed to determine the LEDs' thermal parameters at various operating conditions. The junction temperature transient response is described by a multi-exponential function model to extract thermal time constants. The transient response curve is divided into three layers and expressed by three exponential functions. Each layer is associated with a particular thermal time constant, thermal resistance, and thermal capacitance. It is found that the thermal time constant of LED package is on the order of 22 to 100 ms. Comparison between the experimental results is carried out to show the design effects on thermal performance of the LED package.

  5. Structural and optical properties of zirconia thin films deposited by reactive high-power impulse magnetron sputtering

    Zhao, Xiaoli; Jin, Jie [Tianjin University, School of Electronic Information Engineering, Tianjin (China); Cheng, Jui-Ching, E-mail: juiching@ntut.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lee, Jyh-Wei [Ming Chi University of Technology, College of Materials Engineering, New Taipei City, Taiwan (China); Wu, Kuo-Hong [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lin, Kuo-Cheng; Tsai, Jung-Ruey [Asia University, Department of Photonics and Communication Engineering, Taichung, Taiwan (China); Liu, Kou-Chen, E-mail: jacobliu@mail.cgu.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China)

    2014-11-03

    Zirconia films are deposited by reactive high power impulse magnetron sputtering (HiPIMS) technology on glass and indium-tin-oxide (ITO)/glass substrates. Preparation, microstructure and optical characteristics of the films have been studied. During deposition, the influence of the target power and duty cycle on the peak current–voltage and power density has been observed in oxide mode. Transparent thin films under different oxygen proportions are obtained on the two substrates. Atomic force microscopy measurements showed that the surface roughness of the films was lower by reactive HiPIMS than DC sputtering for all oxygen contents. The transmission and reflectance properties of differently grown zirconia films were also investigated using an ultraviolet–visible spectrophotometer. The optical transmittance of films grown on glass substrates by HiPIMS reached maximum values above 90%, which exceeded that by DC sputtering. The band edge near 5.86 eV shifted to a lower wavelength for zirconia films prepared with oxygen flow rates lower than 4.5 sccm. For the films prepared on ITO/glass substrates, the transmittance and the band gap of zirconia films were limited by ITO films; a maximum average transmittance of 84% was obtained at 4.5 sccm O{sub 2} and the energy band gap was in the range of 3.7–3.8 eV for oxygen flow rates ranging from 3.5 to 5.0 sccm. Finally, the electrical properties of zirconia films have also been discussed. - Highlights: • Zirconia films are deposited by reactive high power impulse magnetron sputtering. • Low roughness films are obtained. • Films show a high transmittance (> 90%). • Films prepared on glass have a band gap of 5.9 eV.

  6. Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp

    Tetzner, Kornelius; Lin, Yen-Hung; Regoutz, Anna; Seitkhan, Akmaral; Payne, David J.; Anthopoulos, Thomas D.

    2017-01-01

    We report the fabrication of solution-processed In2O3 and In2O3/ZnO heterojunction thin-film transistors (TFTs) where the precursor materials were converted to their semiconducting state using high power light pulses generated by a xenon flash lamp

  7. Layer-by-layer assembled polyaniline nanofiber/multiwall carbon nanotube thin film electrodes for high-power and high-energy storage applications.

    Hyder, Md Nasim; Lee, Seung Woo; Cebeci, Fevzi Ç; Schmidt, Daniel J; Shao-Horn, Yang; Hammond, Paula T

    2011-11-22

    Thin film electrodes of polyaniline (PANi) nanofibers and functionalized multiwall carbon nanotubes (MWNTs) are created by layer-by-layer (LbL) assembly for microbatteries or -electrochemical capacitors. Highly stable cationic PANi nanofibers, synthesized from the rapid aqueous phase polymerization of aniline, are assembled with carboxylic acid functionalized MWNT into LbL films. The pH-dependent surface charge of PANi nanofibers and MWNTs allows the system to behave like weak polyelectrolytes with controllable LbL film thickness and morphology by varying the number of bilayers. The LbL-PANi/MWNT films consist of a nanoscale interpenetrating network structure with well developed nanopores that yield excellent electrochemical performance for energy storage applications. These LbL-PANi/MWNT films in lithium cell can store high volumetric capacitance (~238 ± 32 F/cm(3)) and high volumetric capacity (~210 mAh/cm(3)). In addition, rate-dependent galvanostatic tests show LbL-PANi/MWNT films can deliver both high power and high energy density (~220 Wh/L(electrode) at ~100 kW/L(electrode)) and could be promising positive electrode materials for thin film microbatteries or electrochemical capacitors. © 2011 American Chemical Society

  8. High Power Orbit Transfer Vehicle

    Gulczinski, Frank

    2003-01-01

    ... from Virginia Tech University and Aerophysics, Inc. to examine propulsion requirements for a high-power orbit transfer vehicle using thin-film voltaic solar array technologies under development by the Space Vehicles Directorate (dubbed PowerSail...

  9. Atmospheric-Pressure-Spray, Chemical- Vapor-Deposited Thin-Film Materials Being Developed for High Power-to- Weight-Ratio Space Photovoltaic Applications

    Hepp, Aloysius F.; Harris, Jerry D.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Smith, Mark A.; Cowen, Jonathan E.

    2001-01-01

    The key to achieving high specific power (watts per kilogram) space photovoltaic arrays is the development of high-efficiency thin-film solar cells that are fabricated on lightweight, space-qualified substrates such as Kapton (DuPont) or another polymer film. Cell efficiencies of 20 percent air mass zero (AM0) are required. One of the major obstacles to developing lightweight, flexible, thin-film solar cells is the unavailability of lightweight substrate or superstrate materials that are compatible with current deposition techniques. There are two solutions for working around this problem: (1) develop new substrate or superstrate materials that are compatible with current deposition techniques, or (2) develop new deposition techniques that are compatible with existing materials. The NASA Glenn Research Center has been focusing on the latter approach and has been developing a deposition technique for depositing thin-film absorbers at temperatures below 400 C.

  10. Wall thinning of piping in power plants

    Ohta, Joji; Inada, Fumio; Morita, Ryo; Kawai, Noboru; Yoneda, Kimitoshi

    2005-01-01

    Major mechanisms causing wall thinning of piping in power plants are flow accelerated corrosion (FAC), cavitation erosion and droplet erosion. Their fundamental aspects are reviewed on the basis of literature data. FAC is chemical process and it is affected by hydrodynamic factors, temperature, pH, dissolved oxygen concentration and chemical composition of materials. On the other hand, cavitation erosion and droplet erosion are mechanical process and they are mainly affected by hydrodynamic factors and mechanical properties of materials. Evaluation codes for FAC and mitigation methods of FAC and the erosion are also described. Wall thinning of piping is one of public concerns after an accident of a pipe failure at Mihama Nuclear Power Plant Unit 3, Kansai Electric Power Co., Inc., in August 2004. This paper gives comprehensive understanding of the wall thinning mechanism. (author)

  11. Thin film coatings for space electrical power system applications

    Gulino, Daniel A.

    1988-01-01

    This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

  12. On the improvement of PEC activity of hematite thin films deposited by high-power pulsed magnetron sputtering method

    Kment, Š.; Hubička, Zdeněk; Krysa, C.; Sekora, D.; Zlámal, M.; Olejníček, Jiří; Čada, Martin; Kšírová, Petra; Remeš, Zdeněk; Schmuki, P.; Schubert, E.; Zbořil, R.

    2015-01-01

    Roč. 165, Apr (2015), s. 344-350 ISSN 0926-3373 R&D Projects: GA ČR GAP108/12/2104; GA MŠk LH12043 Institutional support: RVO:68378271 Keywords : ALD * HiPIMS * passivation layer * photoelectrochemical water splitting * very thin films Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 8.328, year: 2015

  13. Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp

    Tetzner, Kornelius

    2017-11-01

    We report the fabrication of solution-processed In2O3 and In2O3/ZnO heterojunction thin-film transistors (TFTs) where the precursor materials were converted to their semiconducting state using high power light pulses generated by a xenon flash lamp. In2O3 TFTs prepared on glass substrates exhibited low-voltage operation (≤2 V) and a high electron mobility of ∼6 cm2 V−1 s−1. By replacing the In2O3 layer with a photonically processed In2O3/ZnO heterojunction, we were able to increase the electron mobility to 36 cm2 V−1 s−1, while maintaining the low-voltage operation. Although the level of performance achieved in these devices is comparable to control TFTs fabricated via thermal annealing at 250 °C for 1 h, the photonic treatment approach adopted here is extremely rapid with a processing time of less than 18 s per layer. With the aid of a numerical model we were able to analyse the temperature profile within the metal oxide layer(s) upon flashing revealing a remarkable increase of the layer\\'s surface temperature to ∼1000 °C within ∼1 ms. Despite this, the backside of the glass substrate remains unchanged and close to room temperature. Our results highlight the applicability of the method for the facile manufacturing of high performance metal oxide transistors on inexpensive large-area substrates.

  14. Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti-Cu thin films

    Stranak, Vitezslav; Hippler, Rainer; Cada, Martin; Hubicka, Zdenek; Tichy, Milan

    2010-01-01

    Time-resolved comparative study of dual magnetron sputtering (dual-MS) and dual high power impulse magnetron sputtering (dual-HiPIMS) systems arranged with closed magnetic field is presented. The dual-MS system was operated with a repetition frequency 4.65 kHz (duty cycle ≅50%). The frequency during dual-HiPIMS is lower as well as its duty cycle (f=100 Hz, duty 1%). Different metallic targets (Ti, Cu) and different cathode voltages were applied to get required stoichiometry of Ti-Cu thin films. The plasma parameters of the interspace between magnetrons in the substrate position were investigated by time-resolved optical emission spectroscopy, Langmuir probe technique, and measurement of ion fluxes to the substrate. It is shown that plasma density as well as ion flux is higher about two orders of magnitude in dual-HiPIMS system. This fact is partially caused by low diffusion of ionized sputtered particles (Ti + ,Cu + ) which creates a preionized medium.

  15. Moderate high power 1 to 20μs and kHz Ho:YAG thin disk laser pulses for laser lithotripsy

    Renz, Günther

    2015-02-01

    An acousto-optically or self-oscillation pulsed thin disk Ho:YAG laser system at 2.1 μm with an average power in the 10 W range will be presented for laser lithotripsy. In the case of cw operation the thin disk Ho:YAG is either pumped with InP diode stacks or with a thulium fiber laser which leads to a laser output power of 20 W at an optical-to-optical efficiency of 30%. For the gain switched mode of operation a modulated Tm-fiber laser is used to produce self-oscillation pulses. A favored pulse lengths for uric acid stone ablation is known to be at a few μs pulse duration which can be delivered by the thin disk laser technology. In the state of the art laser lithotripter, stone material is typically ablated with 250 to 750 μs pulses at 5 to 10 Hz and with pulse energies up to a few Joule. The ablation mechanism is performed in this case by vaporization into stone dust and fragmentation. With the thin disk laser technology, 1 to 20 μs-laser pulses with a repetition rate of a few kHz and with pulse energies in the mJ-range are available. The ablation mechanism is in this case due to a local heating of the stone material with a decomposition of the crystalline structure into calcium carbonate powder which can be handled by the human body. As a joint process to this thermal effect, imploding water vapor bubbles between the fiber end and the stone material produce sporadic shock waves which help clear out the stone dust and biological material.

  16. High-power diode-pumped Nd:Lu2O3 crystal continuous-wave thin-disk laser at 1359 nm

    Li, J H; Liu, X H; Wu, J B; Zhang, X; Li, Y L

    2012-01-01

    We present for the first time, to the best of our knowledge, a 1359 nm continuous-wave (CW) Nd:Lu 2 O 3 laser based on the 4 F 5/2 – 4 F 13/2 transition. The use of a pump module with 16 passes through the crystal allowed the realization of a Nd:Lu 2 O 3 thin-disk laser with 3.52 W of CW output power. The slope efficiency with respect to the incident pump power was 21.4%, and the fluctuation of the output power was better than 3.55% in the given 2 hour. The beam quality factor M 2 is 1.14 and 1.18 for tangential direction and sagittal direction, respectively

  17. Fabrication of high quality Cu2SnS3 thin film solar cell with 1.12% power conversion efficiency obtain by low cost environment friendly sol-gel technique

    Chaudhari, J. J.; Joshi, U. S.

    2018-03-01

    Cu2SnS3 (CTS) is an emerging ternery chalcogenide material with great potential application in thin film solar cells. We present here high quality Cu2SnS3 thin films using a facile spin coating method. The as deposited films of CTS were sulphurized in a graphite box using tubular furnace at 520 °C for 60 min at the rate of 2.83 °C min-1 in argon atmosphere. X-ray diffraction (XRD) and Raman spectroscopy studies confirm tetragonal phase and absence of any secondary phase in sulphurized CTS thin films. X-ray photoelectron spectroscopy (XPS) demonstrates that Cu and Sn are in +1 and +4 oxidation state respectively. Surface morphology of CTS films were analyzed by field emission scanning electron microscope and atomic force microscope (AFM), which revealed a smooth surface with roughness (RMS) of 6.32 nm for sulphurized CTS film. Hall measurements confirmed p-type conductivity with hole concentartion of sulphurized CTS thin film is of 6.5348 × 1020 cm-3. UV-vis spectra revealed a direct energy band gap varies from 1.45 eV to 1.01 eV for as-deposited and sulphurized CTS thin film respectively. Such band gap values are optimum for semiconductor material as an absorber layer of thin film solar cell. The CTS thin film solar cell had following structure: SLG/FTO/ZnO/CTS/Al with short circuit current density of (Jsc) of 11.6 mA cm-2, open circuit voltage (Voc) of 0.276 V, active area of 0.16 cm2, fill factor (FF) of 35% and power conversion efficiency of 1.12% under AM 1.5 (100 mW cm-2) illumination in simulated standard test conditions.

  18. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  19. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Bakoglidis, Konstantinos D.; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

    2015-01-01

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN x ) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN x films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N 2 /Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V s , was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V s  ≥ 60 V, V s  ≥ 100 V, and V s  = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V s for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V s , while CN x films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant

  20. High temperature superconductor thin films

    Correra, L.

    1992-01-01

    Interdisciplinary research on superconducting oxides is the main focus of the contributors in this volume. Several aspects of the thin film field from fundamental properties to applications are examined. Interesting results for the Bi system are also reviewed. The 132 papers, including 8 invited, report mainly on the 1-2-3 system, indicating that the Y-Ba-Cu-O and related compounds are still the most intensively studied materials in this field. The volume attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved. The papers are presented in five chapters, subsequently on properties, film growth and processing, substrates and multilayers, structural characterization, and applications

  1. CSTI High Capacity Power

    Winter, J.M.

    1989-01-01

    The SP-100 program was established in 1983 by DOD, DOE, and NASA as a joint program to develop the technology necessary for space nuclear power systems for military and civil application. During FY-86 and 87, the NASA SP-100 Advanced Technology Program was devised to maintain the momentum of promising technology advancement efforts started during Phase 1 of SP-100 and to strengthen, in key areas, the chances for successful development and growth capability of space nuclear reactor power systems for future space applications. In FY-88, the Advanced Technology Program was incorporated into NASA's new Civil Space Technology Initiative (CSTI). The CSTI Program was established to provide the foundation for technology development in automation and robotics, information, propulsion, and power. The CSTI High Capacity Power Program builds on the technology efforts of the SP-100 program, incorporates the previous NASA SP-100 Advanced Technology project, and provides a bridge to NASA Project Pathfinder. The elements of CSTI High Capacity Power development include Conversion Systems, Thermal Management, Power Management, System Diagnostics, and Environmental Interactions. Technology advancement in all areas, including materials, is required to assure the high reliability and 7 to 10 year lifetime demanded for future space nuclear power systems. The overall program will develop and demonstrate the technology base required to provide a wide range of modular power systems as well as allowing mission independence from solar and orbital attitude requirements. Several recent advancements in CSTI High Capacity power development will be discussed

  2. Electrochemically synthesized nanocrystalline spinel thin film for high performance supercapacitor

    Gupta, Vinay [Carbon Technology Unit, Engineering Materials Division, National Physical Laboratory, New-Delhi, 110012 (India); Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan); Japan Science and Technology Agency, Kawaguchi-shi, Saitama, 332-0012 (Japan); Gupta, Shubhra; Miura, Norio [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan)

    2010-06-01

    Spinels are not known for their supercapacitive nature. Here, we have explored electrochemically synthesized nanostructured NiCo{sub 2}O{sub 4} spinel thin-film electrode for electrochemical supercapacitors. The nanostructured NiCo{sub 2}O{sub 4} spinel thin film exhibited a high specific capacitance value of 580 F g{sup -1} and an energy density of 32 Wh kg{sup -1} at the power density of 4 kW kg{sup -1}, accompanying with good cyclic stability. (author)

  3. Resonant High Power Combiners

    Langlois, Michel; Peillex-Delphe, Guy

    2005-01-01

    Particle accelerators need radio frequency sources. Above 300 MHz, the amplifiers mostly used high power klystrons developed for this sole purpose. As for military equipment, users are drawn to buy "off the shelf" components rather than dedicated devices. IOTs have replaced most klystrons in TV transmitters and find their way in particle accelerators. They are less bulky, easier to replace, more efficient at reduced power. They are also far less powerful. What is the benefit of very compact sources if huge 3 dB couplers are needed to combine the power? To alleviate this drawback, we investigated a resonant combiner, operating in TM010 mode, able to combine 3 to 5 IOTs. Our IOTs being able to deliver 80 kW C.W. apiece, combined power would reach 400 kW minus the minor insertion loss. Values for matching and insertion loss are given. The behavior of the system in case of IOT failure is analyzed.

  4. High-power klystrons

    Siambis, John G.; True, Richard B.; Symons, R. S.

    1994-05-01

    Novel emerging applications in advanced linear collider accelerators, ionospheric and atmospheric sensing and modification and a wide spectrum of industrial processing applications, have resulted in microwave tube requirements that call for further development of high power klystrons in the range from S-band to X-band. In the present paper we review recent progress in high power klystron development and discuss some of the issues and scaling laws for successful design. We also discuss recent progress in electron guns with potential grading electrodes for high voltage with short and long pulse operation via computer simulations obtained from the code DEMEOS, as well as preliminary experimental results. We present designs for high power beam collectors.

  5. Laser plasma generation of hydrogen-free diamond-like carbon thin films on Zr-2.5Nb CANDU pressure tube materials and silicon wafers with a pulsed high-power CO2 laser

    Ebrahim, N.A.; Mouris, J.F.; Hoffmann, C.R.J.; Davis, R.W.

    1995-06-01

    We report the first experiments on the laser plasma deposition of hydrogen-free, diamond-like carbon (DLC) films on Zr-2.5Nb CANDU pressure-tube materials and silicon substrates, using the short-pulse, high-power, CO 2 laser in the High-Power Laser Laboratory at Chalk River Laboratories. The films were (AFM). The thin films show the characteristic signature of DLC films in the Raman spectra obtained using a krypton-ion (Kr + ) laser. The Vickers ultra-low-load microhardness tests show hardness of the coated surface of approximately 7000 Kg force mm -2 , which is consistent with the hardness associated with DLC films. AFM examination of the film morphology shows diamond-like crystals distributed throughout the film, with film thicknesses of up to 0.5 μm generated with 50 laser pulses. With significantly more laser pulses, it is expected that very uniform diamond-like films would be produced. These experiments suggest that it should be possible to deposit hydrogen-free, diamond-like films of relevance to nuclear reactor components with a high-power and high-repetition-rate laser facility. (author). 7 refs., 2 tabs., 15 figs

  6. Variations in thermoelectric power of thin monocrystalline films with conductivity

    Tellier, C. R.; Tosser, A. J.; Hafid, L.

    1980-12-01

    Starting from the bi-dimensional model for grain boundaries in monocrystalline thin films, the difference in thermoelectric power is expressed in terms of conductivity and energy dependence of the bulk electronic mean free path U. A new procedure is suggested for measuring U.

  7. High power microwaves

    Benford, James; Schamiloglu, Edl

    2016-01-01

    Following in the footsteps of its popular predecessors, High Power Microwaves, Third Edition continues to provide a wide-angle, integrated view of the field of high power microwaves (HPMs). This third edition includes significant updates in every chapter as well as a new chapter on beamless systems that covers nonlinear transmission lines. Written by an experimentalist, a theorist, and an applied theorist, respectively, the book offers complementary perspectives on different source types. The authors address: * How HPM relates historically and technically to the conventional microwave field * The possible applications for HPM and the key criteria that HPM devices have to meet in order to be applied * How high power sources work, including their performance capabilities and limitations * The broad fundamental issues to be addressed in the future for a wide variety of source types The book is accessible to several audiences. Researchers currently in the field can widen their understanding of HPM. Present or pot...

  8. High Power High Thrust Ion Thruster (HPHTion): 50 CM Ion Thruster for Near-Earth Applications, Phase I

    National Aeronautics and Space Administration — Advances in high power, photovoltaic technology has enabled the possibility of reasonably sized, high specific power, high power, solar arrays. New thin film solar...

  9. Switching power converters medium and high power

    Neacsu, Dorin O

    2013-01-01

    An examination of all of the multidisciplinary aspects of medium- and high-power converter systems, including basic power electronics, digital control and hardware, sensors, analog preprocessing of signals, protection devices and fault management, and pulse-width-modulation (PWM) algorithms, Switching Power Converters: Medium and High Power, Second Edition discusses the actual use of industrial technology and its related subassemblies and components, covering facets of implementation otherwise overlooked by theoretical textbooks. The updated Second Edition contains many new figures, as well as

  10. Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits

    Hanna, Amir; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2015-01-01

    We report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.

  11. Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits

    Hanna, Amir

    2015-08-12

    We report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.

  12. Influence of sputtering power on the optical properties of ITO thin films

    K, Aijo John; M, Deepak, E-mail: manju.thankamoni@gmail.com; T, Manju, E-mail: manju.thankamoni@gmail.com [Department of Physics, Sree Sankara College, Kalady P. O., Ernakulam Dist., Kerala (India); Kumar, Vineetha V. [Dept. of Physics, K. E. College, Mannanam, Kottayam Dist., Kerala (India)

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  13. Highly coercive thin-film nanostructures

    Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

    2005-01-01

    The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

  14. High efficiency thin-film solar cells

    Schock, Hans-Werner [Helmholtz Zentrum Berlin (Germany). Solar Energy

    2012-11-01

    Production of photovoltaics is growing worldwide on a gigawatt scale. Among the thin film technologies, Cu(In,Ga)S,Se{sub 2} (CIS or CIGS) based solar cells have been the focus of more and more attention. This paper aims to analyze the success of CIGS based solar cells and the potential of this technology for future photovoltaics large-scale production. Specific material properties make CIS unique and allow the preparation of the material with a wide range of processing options. The huge potential lies in the possibility to take advantage of modern thin film processing equipment and combine it with very high efficiencies beyond 20% already achieved on the laboratory scale. A sustainable development of this technology could be realized by modifying the materials and replacing indium by abundant elements. (orig.)

  15. Investigation of plasma stream collision produced by thin films irradiated by powerful pulsed electron beam

    Efremov, V P; Demidov, B A; Ivkin, M V; Mescheryakov, A N; Petrov, V A; Potapenko, A I

    2006-01-01

    Collision of fast plasma streams in vacuum is investigated. Plasma streams were produced by irradiation of thin foils with a powerful pulsed electron beam. Interaction of the plasma flows was studied by using frame and streak cameras. One-dimensional numerical simulation was carried out. Application of this method for porous ICF targets and high-energy physics is discussed

  16. High performance thin-film composite forward osmosis membrane.

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A; Schiffman, Jessica D; Elimelech, Menachem

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 mum) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m(2-)h(-1), while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution.

  17. High Performance Thin-Film Composite Forward Osmosis Membrane

    Yip, Ngai Yin

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 μm) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m2-h-1, while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution. © 2010 American Chemical Society.

  18. Future Power Production by LENR with Thin-Film Electrodes

    Miley, George H.; Hora, Heinz; Lipson, Andrei; Luo, Nie; Shrestha, P. Joshi

    2007-03-01

    PdD cluster reaction theory was recently proposed to explain a wide range of Low energy Nuclear Reaction (LENR) experiments. If understood and optimized, cluster reactions could lead to a revolutionary new power source of nuclear energy. The route is two-fold. First, the excess heat must be obtained reproducibly and over extended run times. Second, the percentage of excess must be significantly (order of magnitude or more) higher than the 20-50% typically today. The thin film methods described here have proven to be quite reproducible, e.g. providing excess heat of 20-30% in nine consecutive runs of several weeks each. However, mechanical separation of the films occurs over long runs due to the severe mechanical stresses created.. Techniques to overcome these problems are possible using graded bonding techniques similar to that used in high temperature solid oxide fuel cells. Thus the remaining key issue is to increase the excess heat. The cluster model provides import insight into this. G. H. Miley, H. Hora, et al., 233rd Amer Chem Soc Meeting, Chicago, IL, March 25-29, 2007.

  19. Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.

    Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae

    2014-04-23

    A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. High Power Density Motors

    Kascak, Daniel J.

    2004-01-01

    With the growing concerns of global warming, the need for pollution-free vehicles is ever increasing. Pollution-free flight is one of NASA's goals for the 21" Century. , One method of approaching that goal is hydrogen-fueled aircraft that use fuel cells or turbo- generators to develop electric power that can drive electric motors that turn the aircraft's propulsive fans or propellers. Hydrogen fuel would likely be carried as a liquid, stored in tanks at its boiling point of 20.5 K (-422.5 F). Conventional electric motors, however, are far too heavy (for a given horsepower) to use on aircraft. Fortunately the liquid hydrogen fuel can provide essentially free refrigeration that can be used to cool the windings of motors before the hydrogen is used for fuel. Either High Temperature Superconductors (HTS) or high purity metals such as copper or aluminum may be used in the motor windings. Superconductors have essentially zero electrical resistance to steady current. The electrical resistance of high purity aluminum or copper near liquid hydrogen temperature can be l/lOO* or less of the room temperature resistance. These conductors could provide higher motor efficiency than normal room-temperature motors achieve. But much more importantly, these conductors can carry ten to a hundred times more current than copper conductors do in normal motors operating at room temperature. This is a consequence of the low electrical resistance and of good heat transfer coefficients in boiling LH2. Thus the conductors can produce higher magnetic field strengths and consequently higher motor torque and power. Designs, analysis and actual cryogenic motor tests show that such cryogenic motors could produce three or more times as much power per unit weight as turbine engines can, whereas conventional motors produce only 1/5 as much power per weight as turbine engines. This summer work has been done with Litz wire to maximize the current density. The current is limited by the amount of heat it

  1. High-power electronics

    Kapitsa, Petr Leonidovich

    1966-01-01

    High-Power Electronics, Volume 2 presents the electronic processes in devices of the magnetron type and electromagnetic oscillations in different systems. This book explores the problems of electronic energetics.Organized into 11 chapters, this volume begins with an overview of the motion of electrons in a flat model of the magnetron, taking into account the in-phase wave and the reverse wave. This text then examines the processes of transmission of electromagnetic waves of various polarization and the wave reflection from grids made of periodically distributed infinite metal conductors. Other

  2. High Power Vanadate lasers

    Strauss

    2006-07-01

    Full Text Available stream_source_info Strauss1_2006.pdf.txt stream_content_type text/plain stream_size 3151 Content-Encoding UTF-8 stream_name Strauss1_2006.pdf.txt Content-Type text/plain; charset=UTF-8 Laser Research Institute... University of Stellenbosch www.laser-research.co.za High Power Vanadate lasers H.J.Strauss, Dr. C. Bollig, R.C. Botha, Prof. H.M. von Bergmann, Dr. J.P. Burger Aims 1) To develop new techniques to mount laser crystals, 2) compare the lasing properties...

  3. Characterization of optical and microstructure properties of ultraviolet Sc2O3 thin films and their damage mechanism at high laser power

    Liu Guanghui; Xue Chunrong; Jin Yunxia; Zhang Weili; Fang Ming; He Hongbo; Fan Zhengxiu

    2010-01-01

    The electron beam evaporation deposition method was employed to prepare scandium oxide (Sc 2 O 3 ) films with substrate temperatures varying from 50 to 350 degree C. A spectrophotometer, a glancing incidence X-ray diffraction spectrometer and a WYKO optical profilograph were employed to investigate the optical, microstructure properties and surface roughness of the Sc 2 O 3 films. The refractive index and the extinction coefficient were calculated from the transmittance and reflectance spectra with the help of the Essential Macleod. The laser induced damage threshold (LIDT) of the Sc 2 O 3 films was characterized by a pulsed Nd: YAG laser system at 355 nm with a pulse duration of 8 ns. A maximum value of 2.6 J/cm 2 was derived, and the LIDT results were found to vary in the opposite direction to the extinction coefficient, surface root mean square roughness and optical loss of the Sc 2 O 3 films. An optical microscope and a scanning electron microscope were used to characterize the damage morphology of the samples, and the development of damage with increasing laser energy density was recorded and discussed. The relationship between the LIDT and the deposition parameters of the Sc 2 O 3 thin films was analyzed, and the damage mechanism of the films under 355 nm laser irradiation was discussed. (authors)

  4. High power density carbonate fuel cell

    Yuh, C.; Johnsen, R.; Doyon, J.; Allen, J. [Energy Research Corp., Danbury, CT (United States)

    1996-12-31

    Carbonate fuel cell is a highly efficient and environmentally clean source of power generation. Many organizations worldwide are actively pursuing the development of the technology. Field demonstration of multi-MW size power plant has been initiated in 1996, a step toward commercialization before the turn of the century, Energy Research Corporation (ERC) is planning to introduce a 2.85MW commercial fuel cell power plant with an efficiency of 58%, which is quite attractive for distributed power generation. However, to further expand competitive edge over alternative systems and to achieve wider market penetration, ERC is exploring advanced carbonate fuel cells having significantly higher power densities. A more compact power plant would also stimulate interest in new markets such as ships and submarines where space limitations exist. The activities focused on reducing cell polarization and internal resistance as well as on advanced thin cell components.

  5. High power coaxial ubitron

    Balkcum, Adam J.

    In the ubitron, also known as the free electron laser, high power coherent radiation is generated from the interaction of an undulating electron beam with an electromagnetic signal and a static periodic magnetic wiggler field. These devices have experimentally produced high power spanning the microwave to x-ray regimes. Potential applications range from microwave radar to the study of solid state material properties. In this dissertation, the efficient production of high power microwaves (HPM) is investigated for a ubitron employing a coaxial circuit and wiggler. Designs for the particular applications of an advanced high gradient linear accelerator driver and a directed energy source are presented. The coaxial ubitron is inherently suited for the production of HPM. It utilizes an annular electron beam to drive the low loss, RF breakdown resistant TE01 mode of a large coaxial circuit. The device's large cross-sectional area greatly reduces RF wall heat loading and the current density loading at the cathode required to produce the moderate energy (500 keV) but high current (1-10 kA) annular electron beam. Focusing and wiggling of the beam is achieved using coaxial annular periodic permanent magnet (PPM) stacks without a solenoidal guide magnetic field. This wiggler configuration is compact, efficient and can propagate the multi-kiloampere electron beams required for many HPM applications. The coaxial PPM ubitron in a traveling wave amplifier, cavity oscillator and klystron configuration is investigated using linear theory and simulation codes. A condition for the dc electron beam stability in the coaxial wiggler is derived and verified using the 2-1/2 dimensional particle-in-cell code, MAGIC. New linear theories for the cavity start-oscillation current and gain in a klystron are derived. A self-consistent nonlinear theory for the ubitron-TWT and a new nonlinear theory for the ubitron oscillator are presented. These form the basis for simulation codes which, along

  6. Nuclear Power Plants Secondary Circuit Piping Wall-Thinning Management in China

    Zhong Zhimin; Li Jinsong; Zheng Hui

    2012-01-01

    Research and field feedbacks showed that nuclear power plants secondary circuit steam and water piping are more sensitive than that of fuel plant to the attack of flow-accelerated corrosion (FAC). FAC, Liquid droplet impingement or cavitation erosion will cause secondary circuit piping local wall-thinning in NPPs. Without effective management, the wall-thinning in those high energy piping will cause leakage or pipe rupture during nuclear power plant operation, more seriously cause unplanned shut down, injured and fatality, or heavy economic losses. This paper briefly introduces the history, development and state of the art of secondary circuit piping wall-thinning management in China NPPs. Then, the effectiveness of inspection grid size selecting was analyzed in detail based on field feedbacks. EPRI recommendatory inspection grid, JSME code recommendatory grid and plant specific inspection grid were compared and the detection probabilities of local wall-thinning were estimated. Then, the development and application of NPPs Secondary Circuit Piping Wall Thickness Management Information System, developed, operated and maintained by our team, was briefly introduced and the statistical analysis results of 11 PWR units were shared. It was conclude that the long term, systemic, effective wall-thinning management strategy of high energy piping was very important to the safety and economic operation of NPPs. Furthermore, take into account the actual situation of China nuclear power plants, some advice and suggestion on developing effective nuclear power plant secondary circuit steam and water piping wall-thinning management system are put forward from code development, design and manufacture, operation management, pipeline and locations selection, inspection method selection and application, thickness measurement result evaluation, residual life predication and decision making, feedbacks usage, personnel training and etc. (author)

  7. High power communication satellites power systems study

    Josloff, A.T.; Peterson, J.R.

    1994-01-01

    This paper discusses a DOE-funded study to evaluate the commercial attractiveness of high power communication satellites and assesses the attributes of both conventional photovoltaic and reactor power systems. This study brings together a preeminent US Industry/Russian team to cooperate on the role of high power communication satellites in the rapidly expanding communications revolution. These high power satellites play a vital role in assuring availability of universally accessible, wide bandwidth communications, for high definition TV, super computer networks and other services. Satellites are ideally suited to provide the wide bandwidths and data rates required and are unique in the ability to provide services directly to the users. As new or relocated markets arise, satellites offer a flexibility that conventional distribution services cannot match, and it is no longer necessary to be near population centers to take advantage of the telecommunication revolution. The geopolitical implications of these substantially enhanced communications capabilities will be significant

  8. High performance direct methanol fuel cell with thin electrolyte membrane

    Wan, Nianfang

    2017-06-01

    A high performance direct methanol fuel cell is achieved with thin electrolyte membrane. 320 mW cm-2 of peak power density and over 260 mW cm-2 at 0.4 V are obtained when working at 90 °C with normal pressure air supply. It is revealed that the increased anode half-cell performance with temperature contributes primarily to the enhanced performance at elevated temperature. From the comparison of iR-compensated cathode potential of methanol/air with that of H2/air fuel cell, the impact of methanol crossover on cathode performance decreases with current density and becomes negligible at high current density. Current density is found to influence fuel efficiency and methanol crossover significantly from the measurement of fuel efficiency at different current density. At high current density, high fuel efficiency can be achieved even at high temperature, indicating decreased methanol crossover.

  9. Nuclear power flies high

    Friedman, S.T.

    1983-01-01

    Nuclear power in aircraft, rockets and satellites is discussed. No nuclear-powered rockets or aircraft have ever flown, but ground tests were successful. Nuclear reactors are used in the Soviet Cosmos serles of satellites, but only one American satellite, the SNAP-10A, contained a reactor. Radioisotope thermoelectric generators, many of which use plutonium 238, have powered more than 20 satellites launched into deep space by the U.S.A

  10. Research and development of photovoltaic power system. Development of novel technologies for fabrication of high quality silicon thin films for solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Kohinshitsu silicon usumaku sakusei gijutsu

    Shimizu, T [Kanazawa University, Ishikawa (Japan). Faculty of Engineering

    1994-12-01

    Described herein are the results of the FY1994 research program for development of novel technologies for fabrication of high quality thin films of silicon for solar cells. The study on the mechanisms and effects of chemical annealing reveals that the film structure greatly varies depending on substrate temperature during the hydrotreatment process, based on the tests with substrate temperature, deposition of superthin film (T1) and hydrotreatment (T2) as the variable parameters. Chemical annealing at low temperature produces a high-quality a-Si:H film of low defect content. The study on fabrication of thin polycrystalline silicon films at low temperature observes on real time the process of deposition of the thin films on polycrystalline silicon substrates, where a natural oxide film is removed beforehand from the substrate. The results indicate that a thin polycrystalline silicon film of 100% crystallinity can be formed even on a polycrystalline silicon substrate by controlling starting gas composition and substrate temperature. The layer-by-layer method is used as the means for forming the seed crystals on a glass substrate, where deposition and hydrotreatment are repeated alternately, to produce the thin crystalline silicon films of high crystallinity. 3 figs.

  11. High energy density capacitors fabricated by thin film technology

    Barbee, T W; Johnson, G W; Wagner, A V.

    1999-01-01

    Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

  12. High Efficiency Power Converter for Low Voltage High Power Applications

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based......, and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often...

  13. High power communication satellites power systems study

    Josloff, Allan T.; Peterson, Jerry R.

    1995-01-01

    This paper discusses a planned study to evaluate the commercial attractiveness of high power communication satellites and assesses the attributes of both conventional photovoltaic and reactor power systems. These high power satellites can play a vital role in assuring availability of universally accessible, wide bandwidth communications, for high definition TV, super computer networks and other services. Satellites are ideally suited to provide the wide bandwidths and data rates required and are unique in the ability to provide services directly to the users. As new or relocated markets arise, satellites offer a flexibility that conventional distribution services cannot match, and it is no longer necessary to be near population centers to take advantage of the telecommunication revolution. The geopolitical implications of these substantially enhanced communications capabilities can be significant.

  14. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the...

  15. Thin-film technology development for the PowerSphere

    Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig H.; Lin, John K.; Scarborough, Stephen E.; Curtis, Henry B.; Kerslake, Thomas W.; Peterson, Todd T.

    2005-01-01

    The PowerSphere concept consists of a relatively large spherical solar array, which would be deployed from a microsatellite. The PowerSphere will enable microsatellite missions across NASA enterprises and DoD missions by providing ample electric power at an affordable cost. The PowerSphere design provides attitude-independent electric power and thermal control for an enclosed microsatellite payload. The specific power design is scalable, robust in high radiation environments and provides sufficient electric power to allow the use of electric propulsion. Electric propulsion enables precise positioning of microsatellites, which is required for inspectors that would be deployed to observe the International Space Station, Space Shuttle or large unmanned spacecraft

  16. Characteristics of thin film fullerene coatings formed under different deposition conditions by power ion beams

    Petrov, A.V.; Ryabchikov, A.I.; Struts, V.K.; Usov, Yu.P.; Renk, T.J.

    2007-01-01

    Carbon allotropic form - C 60 and C 70 can be used in microelectronics, superconductors, solar batteries, logic and memory devices to increase processing tool wear resistance, as magnetic nanocomposite materials for record and storage information, in biology, medicine and pharmacology. In many cases it is necessary to have a thin-film containing C 60 and C 70 fullerene carbon coatings. A possibility in principle of thin carbon films formation with nanocrystalline structure and high content ∼30-95% of C 60 and C 70 fullerene mixture using the method of graphite targets sputtering by a power ion beam has been shown. Formation of thin-film containing C 60 and C 70 fullerene carbon coatings were carried out by means of deposition of ablation plasma on silicon substrates. Ablation plasma was generated as result of interaction of high-power pulsed ion beams (HPPIB) with graphite targets of different densities. It has been demonstrated that formation of fullerenes, their amount and characteristics of thin-film coatings depend on the deposition conditions. The key parameter for such process is the deposition rate, which determines thin film formation conditions and, subsequently, its structure and mechanical properties. Nano-hardness, Young module, adhesion to mono-crystalline silicon substrate, friction coefficient, roughness surface of synthesized coatings at the different deposition conditions were measured. These characteristics are under influence of such main process parameters as energy density of HPPIB, which, in turn, determinates the density and temperature of ablation plasma and deposition speed, which is thickness of film deposited for one pulse of ion current. Nano-hardness and Young module meanings are higher at the increasing of power density of ion beam. Adhesion value is less at the high deposition speed. As rule, friction coefficient depends on vice versa from roughness. (authors)

  17. High Efficiency Power Converter for Low Voltage High Power Applications

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...

  18. High power excimer laser

    Oesterlin, P.; Muckenheim, W.; Basting, D.

    1988-01-01

    Excimer lasers emitting more than 200 W output power are not commercially available. A significant increase requires new technological efforts with respect to both the gas circulation and the discharge system. The authors report how a research project has yielded a laser which emits 0.5 kW at 308 nm when being UV preionized and operated at a repetition rate of 300 Hz. The laser, which is capable of operating at 500 Hz, can be equipped with an x-ray preionization module. After completing this project 1 kW output power will be available

  19. High average power supercontinuum sources

    The physical mechanisms and basic experimental techniques for the creation of high average spectral power supercontinuum sources is briefly reviewed. We focus on the use of high-power ytterbium-doped fibre lasers as pump sources, and the use of highly nonlinear photonic crystal fibres as the nonlinear medium.

  20. Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors

    2011-12-01

    band gap of highly textured PZT thin films. The deposition process variables were - argon and oxygen flows, chamber pressure, RF power (DC Bias...needed another parameter to equate with the number of unknowns in the resultant model equations. From Figure 24, electronic polarizability affects the... Polarizability and Optical dielectric response of a thin.film , ., ,__~--~---\\- 000 01’ "󈧶 Ots Tncnt.re"’°l Effective Polarizability = Reddy

  1. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  2. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Chao-Ming Hsu

    2015-05-01

    Full Text Available High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  3. High-powered manoeuvres

    Anaïs Schaeffer

    2013-01-01

    This week, CERN received the latest new transformers for the SPS. Stored in pairs in 24-tonne steel containers, these transformers will replace the old models, which have been in place since 1981.     The transformers arrive at SPS's access point 4 (BA 4). During LS1, the TE-EPC Group will be replacing all of the transformers for the main converters of the SPS. This renewal campaign is being carried out as part of the accelerator consolidation programme, which began at the start of April and will come to an end in November. It involves 80 transformers: 64 with a power of 2.6 megavolt-amperes (MVA) for the dipole magnets, and 16 with 1.9 MVA for the quadrupoles. These new transformers were manufactured by an Italian company and are being installed outside the six access points of the SPS by the EN-HE Group, using CERN's 220-tonne crane. They will contribute to the upgrade of the SPS, which should thus continue to operate as the injector for the LHC until 2040....

  4. Development of a thin film solar cell interconnect for the PowerSphere concept

    Simburger, Edward J.; Matsumoto, James H.; Giants, Thomas W.; Garcia, Alexander; Liu, Simon; Rawal, Suraj P.; Perry, Alan R.; Marshall, Craig H.; Lin, John K.; Scarborough, Stephen E.; Curtis, Henry B.; Kerslake, Thomas W.; Peterson, Todd T.

    2005-01-01

    Progressive development of microsatellite technologies has resulted in increased demand for lightweight electrical power subsystems including solar arrays. The use of thin film photovoltaics has been recognized as a key solution to meet the power needs. The lightweight cells can generate sufficient power and still meet critical mass requirements. Commercially available solar cells produced on lightweight substrates are being studied as an option to fulfill the power needs. The commercially available solar cells are relatively inexpensive and have a high payoff potential. Commercially available thin film solar cells are primarily being produced for terrestrial applications. The need to convert the solar cell from a terrestrial to a space compatible application is the primary challenge. Solar cell contacts, grids and interconnects need to be designed to be atomic oxygen resistant and withstand rapid thermal cycling environments. A mechanically robust solar cell interconnect is also required in order to withstand handling during fabrication and survive during launch. The need to produce the solar cell interconnects has been identified as a primary goal of the PowerSphere program and is the topic of this paper. Details of the trade study leading to the final design involving the solar cell wrap around contact, flex blanket, welding process, and frame will be presented at the conference

  5. Autonomously managed high power systems

    Weeks, D.J.; Bechtel, R.T.

    1985-01-01

    The need for autonomous power management capabilities will increase as the power levels of spacecraft increase into the multi-100 kW range. The quantity of labor intensive ground and crew support consumed by the 9 kW Skylab cannot be afforded in support of a 75-300 kW Space Station or high power earth orbital and interplanetary spacecraft. Marshall Space Flight Center is managing a program to develop necessary technologies for high power system autonomous management. To date a reference electrical power system and automation approaches have been defined. A test facility for evaluation and verification of management algorithms and hardware has been designed with the first of the three power channel capability nearing completion

  6. New Methods for Thin Film Deposition and First Investigations of the use of High Temperature Superconductors for Thin Film Cavities

    Gustafsson, Anna; Vollenberg, Wilhelmus; Seviour, Rebecca

    2010-01-01

    Niobium thin film cavities have shown good and reliable performance for LEP and LHC, although there are limitations to overcome if this technique should be used for new accelerators such as the ILC. New coating techniques like High Power Impulse Magnetron Sputtering (HiPIMS) has shown very promising results and we will report on its possible improvements for Nb thin film cavity performance. Current materials used in accelerator Superconducting Radio Frequency (SRF) technologies operate at temperatures below 4 K, which require complex cryogenic systems. Researchers have investigated the use of High Temperature Superconductors (HTS) to form RF cavities, with limited success. We propose a new approach to achieve a high-temperature SRF cavity based on the superconducting ’proximity effect’. The superconducting proximity effect is the effect through which a superconducting material in close proximity to a non-superconducting material induces a superconducting condensate in the latter. Using this effect we hope...

  7. EURISOL High Power Targets

    Kadi, Y; Lindroos, M; Ridikas, D; Stora, T; Tecchio, L; CERN. Geneva. BE Department

    2009-01-01

    Modern Nuclear Physics requires access to higher yields of rare isotopes, that relies on further development of the In-flight and Isotope Separation On-Line (ISOL) production methods. The limits of the In-Flight method will be applied via the next generation facilities FAIR in Germany, RIKEN in Japan and RIBF in the USA. The ISOL method will be explored at facilities including ISAC-TRIUMF in Canada, SPIRAL-2 in France, SPES in Italy, ISOLDE at CERN and eventually at the very ambitious multi-MW EURISOL facility. ISOL and in-flight facilities are complementary entities. While in-flight facilities excel in the production of very short lived radioisotopes independently of their chemical nature, ISOL facilities provide high Radioisotope Beam (RIB) intensities and excellent beam quality for 70 elements. Both production schemes are opening vast and rich fields of nuclear physics research. In this article we will introduce the targets planned for the EURISOL facility and highlight some of the technical and safety cha...

  8. The properties of TiN ultra-thin films grown on SiO{sub 2} substrate by reactive high power impulse magnetron sputtering under various growth angles

    Shayestehaminzadeh, S., E-mail: ses30@hi.is [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Tryggvason, T.K. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Karlsson, L. [School of Engineering and Science, Jacobs University Bremen, Campus Ring 1, 28759 Bremen (Germany); Olafsson, S. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Gudmundsson, J.T. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); University of Michigan-Shanghai Jiao Tong University, University Joint Institute, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200240 (China)

    2013-12-02

    Thin TiN films were grown on SiO{sub 2} by reactive high power impulse magnetron sputtering (HiPIMS) and conventional dc magnetron sputtering (dcMS) while varying the angle between the target and the substrate surface from 0° (on-axis growth) to 90° (off-axis growth). Surface morphology and structural characterization were carried out using X-ray diffraction and reflection methods and the film properties were compared. The dcMS process shows higher growth rate than the HiPIMS process for on-axis grown films but the dcMS growth rate drops drastically for off-axis growth while the HiPIMS growth rate decreases slowly with increased angle between target and substrate for off-axis growth and becomes comparable to the dcMS growth rate. The dcMS grown films exhibit angle dependence in the density and surface roughness while the HiPIMS process creates denser and smoother films that are less angle dependent in all aspects. It was observed that the HiPIMS grown films remain poly-crystalline for all angles of rotation while the dcMS grown films are somewhat amorphous after 60°. The [111] and [200] grain sizes are comparable to the total film thickness in the HiPIMS grown films for all angles of rotation. In the case of dcMS, the [111], [200] and [220] grain sizes are roughly of the same size and much smaller than the total thickness for all growth angles except at 60° and higher. - Highlights: • TiN films were grown on SiO{sub 2} by HiPIMS and dcMS under various growth angles. • Influence of growth angle α = 0–90° on deposition rate and film quality was studied. • The HiPIMS process produces denser and smoother films for all growth angles. • At α = 0°, the growth rate of HiPIMS is 25% of dcMS while it is 50% at 90°. • The HiPIMS grown films remain poly-crystalline for all growth angles.

  9. Applications of high power microwaves

    Benford, J.; Swegle, J.

    1993-01-01

    The authors address a number of applications for HPM technology. There is a strong symbiotic relationship between a developing technology and its emerging applications. New technologies can generate new applications. Conversely, applications can demand development of new technological capability. High-power microwave generating systems come with size and weight penalties and problems associated with the x-radiation and collection of the electron beam. Acceptance of these difficulties requires the identification of a set of applications for which high-power operation is either demanded or results in significant improvements in peRFormance. The authors identify the following applications, and discuss their requirements and operational issues: (1) High-energy RF acceleration; (2) Atmospheric modification (both to produce artificial ionospheric mirrors for radio waves and to save the ozone layer); (3) Radar; (4) Electronic warfare; and (5) Laser pumping. In addition, they discuss several applications requiring high average power than border on HPM, power beaming and plasma heating

  10. Modular High Voltage Power Supply

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  11. High-frequency applications of high-temperature superconductor thin films

    Klein, N.

    2002-10-01

    High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz.

  12. High-frequency applications of high-temperature superconductor thin films

    Klein, N.

    2002-01-01

    High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz. (author)

  13. High Performance Thin-Film Composite Forward Osmosis Membrane

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A.; Schiffman, Jessica D.; Elimelech, Menachem

    2010-01-01

    obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed

  14. Effect of R.F. Power to the Structural Properties of ZnO Thin Films Deposited by Magnetron Sputtering

    Sin, N.D.M.; Rusop, M.

    2011-01-01

    The effect of RF power variation (100 watt∼400 watt ) on the zinc oxide (ZnO) thin films electrical, optical and structural properties were examined using current voltage (I-V) measurement, UV-Vis-NIR spectrophotometer, x-ray diffraction (XRD) and atomic force microscope (AFM). ZnO thin films were prepared at room temperature in pure argon atmosphere by a RF magnetron sputtering using ZnO target. The resistivity of thin film show the lowest at 300 watt. The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties using UV-VIS spectrophotometer (JASCO 670) . Highly oriented ZnO thin films [002] direction were obtained by using Rigaku Ultima IV. (author)

  15. High power klystrons for efficient reliable high power amplifiers

    Levin, M.

    1980-11-01

    This report covers the design of reliable high efficiency, high power klystrons which may be used in both existing and proposed troposcatter radio systems. High Power (10 kW) klystron designs were generated in C-band (4.4 GHz to 5.0 GHz), S-band (2.5 GHz to 2.7 GHz), and L-band or UHF frequencies (755 MHz to 985 MHz). The tubes were designed for power supply compatibility and use with a vapor/liquid phase heat exchanger. Four (4) S-band tubes were developed in the course of this program along with two (2) matching focusing solenoids and two (2) heat exchangers. These tubes use five (5) tuners with counters which are attached to the focusing solenoids. A reliability mathematical model of the tube and heat exchanger system was also generated.

  16. Pulsed high-power beams

    Reginato, L.L.; Birx, D.L.

    1988-01-01

    The marriage of induction linac technology with nonlinear magnetic modulators has produced some unique capabilities. It is now possible to produce short-pulse electron beams with average currents measured in amperes, at gradients approaching 1-MeV/m, and with power efficiencies exceeding 50%. This paper reports on a 70-MeV, 3-kA induction accelerator (ETA II) constructed at the Lawrence Livermore National Laboratory that incorporates the pulse technology concepts that have evolved over the past several years. The ETA II is a linear induction accelerator and provides a test facility for demonstration of the high-average-power components and high-brightness sources used in such accelerators. The pulse drive of the accelerator is based on state-of-the-art magnetic pulse compressors with very high peak-power capability, repetition rates exceeding 1 kHz, and excellent reliability

  17. High power laser exciter accelerators

    Martin, T.H.

    1975-01-01

    Recent developments in untriggered oil and water switching now permit the construction of compact, high energy density pulsed power sources for laser excitation. These accelerators, developed principally for electron beam fusion studies, appear adaptable to laser excitation and will provide electron beams of 10 13 to 10 14 W in the next several years. The accelerators proposed for e-beam fusion essentially concentrate the available power from the outside edge of a disk into the central region where the electron beam is formed. One of the main problem areas, that of power flow at the vacuum diode insulator, is greatly alleviated by the multiplicity of electron beams that are allowable for laser excitation. A proposal is made whereby the disk-shaped pulsed power sections are stacked vertically to form a series of radially flowing electron beams to excite the laser gas volume. (auth)

  18. High power fast ramping power supplies

    Marneris,I.; Bajon, E.; Bonati, R.; Sandberg, J.; Roser, T.; Tsoupas, N.

    2009-05-04

    Hundred megawatt level fast ramping power converters to drive proton and heavy ion machines are under research and development at accelerator facilities in the world. This is a leading edge technology. There are several topologies to achieve this power level. Their advantages and related issues will be discussed.

  19. Outer-selective thin film composite (TFC) hollow fiber membranes for osmotic power generation

    Le, Ngoc Lieu

    2016-01-14

    The pressure-retarded osmosis (PRO) process is a green technique for power generation to respond the world\\'s need of energy sustainability. In this study, we have developed the vital component of the process, i.e. membrane, in the configuration of the outer-selective thin-film composite (TFC) hollow fiber, which is more practical than other configurations in the real applications. The support layer morphology and the formation of the selective polyamide layer have been optimized for a good PRO performance. The results show that the bore fluid with higher amount of the solvent N-methyl-2-pyrrolidone leads to full finger-like hollow fibers, which provide higher flux but lower pressure tolerance. The addition of higher amount of diethylene glycol into the dope solution, improves the pore formation and suppresses the macrovoid formation, while properly lowering the take-up speed increases their wall thickness and pressure tolerance. A simple alcohol-pre-wetting approach on the fiber support leads to a smooth and thin polyamide layer, which is favorable for a high water flux and power density. Its efficiency follows this order: n-propanol>ethanol>methanol>water. The n-propanol pre-wetted TFC membrane can tolerate 17 bar with a peak power density of 9.59 W/m2 at room temperature, using 1 M NaCl solution as the draw solution and DI water as feed. This work demonstrates the potential of outer-selective TFC hollow fiber membranes for energy conversion via PRO process, provides useful database to fabricate suitable support morphology and raise a simple technique to practically form a thin and smooth polyamide layer.

  20. Using high thermal stability flexible thin film thermoelectric generator at moderate temperature

    Zheng, Zhuang-Hao; Luo, Jing-Ting; Chen, Tian-Bao; Zhang, Xiang-Hua; Liang, Guang-Xing; Fan, Ping

    2018-04-01

    Flexible thin film thermoelectric devices are extensively used in the microscale industry for powering wearable electronics. In this study, comprehensive optimization was conducted in materials and connection design for fabricating a high thermal stability flexible thin film thermoelectric generator. First, the thin films in the generator, including the electrodes, were prepared by magnetron sputtering deposition. The "NiCu-Cu-NiCu" multilayer electrode structure was applied to ensure the thermal stability of the device used at moderate temperature in an air atmosphere. A design with metal layer bonding and series accordant connection was then employed. The maximum efficiency of a single PN thermocouple generator is >11%, and the output power loss of the generator is <10% after integration.

  1. Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films

    2013-01-01

    In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory. PMID:23634999

  2. High-power, high-efficiency FELs

    Sessler, A.M.

    1989-04-01

    High power, high efficiency FELs require tapering, as the particles loose energy, so as to maintain resonance between the electromagnetic wave and the particles. They also require focusing of the particles (usually done with curved pole faces) and focusing of the electromagnetic wave (i.e. optical guiding). In addition, one must avoid transverse beam instabilities (primarily resistive wall) and longitudinal instabilities (i.e sidebands). 18 refs., 7 figs., 3 tabs

  3. High voltage power network construction

    Harker, Keith

    2018-01-01

    This book examines the key requirements, considerations, complexities and constraints relevant to the task of high voltage power network construction, from design, finance, contracts and project management to installation and commissioning, with the aim of providing an overview of the holistic end to end construction task in a single volume.

  4. High Temperature, High Power Piezoelectric Composite Transducers

    Lee, Hyeong Jae; Zhang, Shujun; Bar-Cohen, Yoseph; Sherrit, StewarT.

    2014-01-01

    Piezoelectric composites are a class of functional materials consisting of piezoelectric active materials and non-piezoelectric passive polymers, mechanically attached together to form different connectivities. These composites have several advantages compared to conventional piezoelectric ceramics and polymers, including improved electromechanical properties, mechanical flexibility and the ability to tailor properties by using several different connectivity patterns. These advantages have led to the improvement of overall transducer performance, such as transducer sensitivity and bandwidth, resulting in rapid implementation of piezoelectric composites in medical imaging ultrasounds and other acoustic transducers. Recently, new piezoelectric composite transducers have been developed with optimized composite components that have improved thermal stability and mechanical quality factors, making them promising candidates for high temperature, high power transducer applications, such as therapeutic ultrasound, high power ultrasonic wirebonding, high temperature non-destructive testing, and downhole energy harvesting. This paper will present recent developments of piezoelectric composite technology for high temperature and high power applications. The concerns and limitations of using piezoelectric composites will also be discussed, and the expected future research directions will be outlined. PMID:25111242

  5. High Power Electron Accelerator Prototype

    Tkachenko, Vadim; Cheskidov, Vladimir; Korobeynikov, G I; Kuznetsov, Gennady I; Lukin, A N; Makarov, Ivan; Ostreiko, Gennady; Panfilov, Alexander; Sidorov, Alexey; Tarnetsky, Vladimir V; Tiunov, Michael A

    2005-01-01

    In recent time the new powerful industrial electron accelerators appear on market. It caused the increased interest to radiation technologies using high energy X-rays due to their high penetration ability. However, because of low efficiency of X-ray conversion for electrons with energy below 5 MeV, the intensity of X-rays required for some industrial applications can be achieved only when the beam power exceeds 300 kW. The report describes a project of industrial electron accelerator ILU-12 for electron energy up to 5 MeV and beam power up to 300 kW specially designed for use in industrial applications. On the first stage of work we plan to use the existing generator designed for ILU-8 accelerator. It is realized on the GI-50A triode and provides the pulse power up to 1.5-2 MW and up to 20-30 kW of average power. In the report the basic concepts and a condition of the project for today are reflected.

  6. Highly efficient 400  W near-fundamental-mode green thin-disk laser.

    Piehler, Stefan; Dietrich, Tom; Rumpel, Martin; Graf, Thomas; Ahmed, Marwan Abdou

    2016-01-01

    We report on the efficient generation of continuous-wave, high-brightness green laser radiation. Green lasers are particularly interesting for reliable and reproducible deep-penetration welding of copper or for pumping Ti:Sa oscillators. By intracavity second-harmonic generation in a thin-disk laser resonator designed for fundamental-mode operation, an output power of up to 403 W is demonstrated at a wavelength of 515 nm with almost diffraction-limited beam quality. The unprecedented optical efficiency of 40.7% of green output power with respect to the pump power of the thin-disk laser is enabled by the intracavity use of a highly efficient grating waveguide mirror, which combines the functions of wavelength stabilization and spectral narrowing, as well as polarization selection in a single element.

  7. Timing A Pulsed Thin Film Pyroelectric Generator For Maximum Power Density

    Smith, A.N.; Hanrahan, B.M.; Neville, C.J.; Jankowski, N.R

    2016-01-01

    Pyroelectric thermal-to-electric energy conversion is accomplished by a cyclic process of thermally-inducing polarization changes in the material under an applied electric field. The pyroelectric MEMS device investigated consisted of a thin film PZT capacitor with platinum bottom and iridium oxide top electrodes. Electric fields between 1-20 kV/cm with a 30% duty cycle and frequencies from 0.1 - 100 Hz were tested with a modulated continuous wave IR laser with a duty cycle of 20% creating temperature swings from 0.15 - 26 °C on the pyroelectric receiver. The net output power of the device was highly sensitive to the phase delay between the laser power and the applied electric field. A thermal model was developed to predict and explain the power loss associated with finite charge and discharge times. Excellent agreement was achieved between the theoretical model and the experiment results for the measured power density versus phase delay. Limitations on the charging and discharging rates result in reduced power and lower efficiency due to a reduced net work per cycle. (paper)

  8. A high-efficiency solution-deposited thin-film photovoltaic device

    Mitzi, David B; Yuan, Min; Liu, Wei; Chey, S Jay; Schrott, Alex G [IBM T. J. Watson Research Center, Yorktown Heights, NY (United States); Kellock, Andrew J; Deline, Vaughn [IBM Almaden Research Center, San Jose, CA (United States)

    2008-10-02

    High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  9. Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

    Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

    2016-05-04

    Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

  10. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  11. High-Power Ion Thruster Technology

    Beattie, J. R.; Matossian, J. N.

    1996-01-01

    Performance data are presented for the NASA/Hughes 30-cm-diam 'common' thruster operated over the power range from 600 W to 4.6 kW. At the 4.6-kW power level, the thruster produces 172 mN of thrust at a specific impulse of just under 4000 s. Xenon pressure and temperature measurements are presented for a 6.4-mm-diam hollow cathode operated at emission currents ranging from 5 to 30 A and flow rates of 4 sccm and 8 sccm. Highly reproducible results show that the cathode temperature is a linear function of emission current, ranging from approx. 1000 C to 1150 C over this same current range. Laser-induced fluorescence (LIF) measurements obtained from a 30-cm-diam thruster are presented, suggesting that LIF could be a valuable diagnostic for real-time assessment of accelerator-arid erosion. Calibration results of laminar-thin-film (LTF) erosion badges with bulk molybdenum are presented for 300-eV xenon, krypton, and argon sputtering ions. Facility-pressure effects on the charge-exchange ion current collected by 8-cm-diam and 30-cm-diam thrusters operated on xenon propellant are presented to show that accel current is nearly independent of facility pressure at low pressures, but increases rapidly under high-background-pressure conditions.

  12. Effect of Different Deposition Power of In2O3 Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method

    Shang-Chao Hung

    2014-01-01

    Full Text Available The (In, Ga, ZnOx (IGZO thin films were deposited on glass substrates using cosputtering method in radio frequency magnetron sputtering system. Zn2Ga2O5 (Ga2O3-2 ZnO, GZO and In2O3 ceramics were used as targets and dual guns were used to deposit the IGZO thin films. Deposition power of GZO target was 80 W and deposition power of pure In2O3 target was changed from 70 W to 100 W, and the deposition time was 30 min. The effect of deposition power of In2O3 target on the crystalline, surface, electrical, and optical properties of the IGZO thin films was investigated at room temperature in a pure Ar atmosphere. The cosputtered IGZO thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition power of In2O3 target due to the room temperature sputtering process. However, the cosputtered IGZO thin films exhibited transparent electrode properties because they had high transmittance ratio and low resistivity. The value variations in the optical band gap (Eg values of the IGZO thin film were evaluated from the plots of (αhν2=c(hν-Eg. We would also show that the deposition power of In2O3 target would have a large effect on mobility and Eg value of the IGZO thin films.

  13. Sputtered thin films for high density tape recording

    Nguyen, L.T.

    This thesis describes the investigation of sputtered thin film media for high density tape recording. As discussed in Chapter 1, to meet the tremendous demand of data storage, the density of recording tape has to be increased continuously. For further increasing the bit density the key factors are:

  14. Highly stable thin film transistors using multilayer channel structure

    Nayak, Pradipta K.; Wang, Zhenwei; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured

  15. Dielectric and acoustical high frequency characterisation of PZT thin films

    Conde, Janine; Muralt, Paul

    2010-01-01

    Pb(Zr, Ti)O 3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  16. Dielectric and acoustical high frequency characterisation of PZT thin films

    Conde, Janine; Muralt, Paul

    2010-02-01

    Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  17. Calculated power output from a thin iron-seeded plasma

    Merts, A.L.; Cowan, R.D.; Magee, N.H. Jr.

    1976-02-01

    Ionization equilibrium calculations are carried out for iron ions at a density of 10 12 cm -3 in a (hydrogen) plasma with electron density 10 14 cm -3 , at temperatures from 0.8 to 10 keV. The computed radiated power loss from this plasma due to the iron ions ranges from about 4 W/cm 3 at the lowest temperature to about 0.4 W/cm 3 at the highest temperature; loss rates for other electron and ion densities will scale approximately as N/sub e/N/sub Fe/10 26 . The losses are due principally to collisionally excited line radiation (especially Δn = 0 transitions) at low temperatures, and to collisionally excited Δn not equal to 0 transitions and to continuum radiative recombination at high temperatures. Spectra are also computed for diagnostic x-ray K/sub α/ (1s - 2p) transitions; the change in spectral distribution as a function of temperature agrees well with observations in the ST Tokamak. Bound-bound radiative transitions and dielectronic recombination are discussed at length in appendices; the latter process is of great importance in the establishment of ionization equilibrium, and in the excitation of K/sub α/ radiation at the lower temperatures

  18. High average power solid state laser power conditioning system

    Steinkraus, R.F.

    1987-01-01

    The power conditioning system for the High Average Power Laser program at Lawrence Livermore National Laboratory (LLNL) is described. The system has been operational for two years. It is high voltage, high power, fault protected, and solid state. The power conditioning system drives flashlamps that pump solid state lasers. Flashlamps are driven by silicon control rectifier (SCR) switched, resonant charged, (LC) discharge pulse forming networks (PFNs). The system uses fiber optics for control and diagnostics. Energy and thermal diagnostics are monitored by computers

  19. High resolving power spectrometer for beam analysis

    Moshammer, H.W.; Spencer, J.E.

    1992-03-01

    We describe a system designed to analyze the high energy, closely spaced bunches from individual RF pulses. Neither a large solid angle nor momentum range is required so this allows characteristics that appear useful for other applications such as ion beam lithography. The spectrometer is a compact, double-focusing QBQ design whose symmetry allows the Quads to range between F or D with a correspondingly large range of magnifications, dispersion and resolving power. This flexibility insures the possibility of spatially separating all of the bunches along the focal plane with minimal transverse kicks and bending angle for differing input conditions. The symmetry of the system allows a simple geometric interpretationof the resolving power in terms of thin lenses and ray optics. We discuss the optics and the hardware that is proposed to measure emittance, energy, energy spread and bunch length for each bunch in an RF pulse train for small bunch separations. We also discuss how to use such measurements for feedback and feedforward control of these bunch characteristics as well as maintain their stability. 2 refs

  20. High power microwave source development

    Benford, James N.; Miller, Gabriel; Potter, Seth; Ashby, Steve; Smith, Richard R.

    1995-05-01

    The requirements of this project have been to: (1) improve and expand the sources available in the facility for testing purposes and (2) perform specific tasks under direction of the Defense Nuclear Agency about the applications of high power microwaves (HPM). In this project the HPM application was power beaming. The requirements of this program were met in the following way: (1) We demonstrated that a compact linear induction accelerator can drive HPM sources at repetition rates in excess of 100 HZ at peak microwave powers of a GW. This was done for the relativistic magnetron. Since the conclusion of this contract such specifications have also been demonstrated for the relativistic klystron under Ballistic Missile Defense Organization funding. (2) We demonstrated an L band relativistic magnetron. This device has been used both on our single pulse machines, CAMEL and CAMEL X, and the repetitive system CLIA. (3) We demonstrated that phase locking of sources together in large numbers is a feasible technology and showed the generation of multigigawatt S-band radiation in an array of relativistic magnetrons.

  1. High-power pulsed lasers

    Holzrichter, J.F.

    1980-01-01

    The ideas that led to the successful construction and operation of large multibeam fusion lasers at the Lawrence Livermore Laboratory are reviewed. These lasers are based on the use of Nd:glass laser materials. However, most of the concepts are applicable to any laser being designed for fusion experimentation. This report is a summary of lectures given by the author at the 20th Scottish University Summer School in Physics, on Laser Plasma Interaction. This report includes basic concepts of the laser plasma system, a discussion of lasers that are useful for short-pulse, high-power operation, laser design constraints, optical diagnostics, and system organization

  2. High-power ultrashort fiber laser for solar cells micromachining

    Lecourt, J.-B.; Duterte, C.; Liegeois, F.; Lekime, D.; Hernandez, Y.; Giannone, D.

    2012-02-01

    We report on a high-power ultra-short fiber laser for thin film solar cells micromachining. The laser is based on Chirped Pulse Amplification (CPA) scheme. The pulses are stretched to hundreds of picoseconds prior to amplification and can be compressed down to picosecond at high energy. The repetition rate is adjustable from 100 kHz to 1 MHz and the optical average output power is close to 13 W (before compression). The whole setup is fully fibred, except the compressor achieved with bulk gratings, resulting on a compact and reliable solution for cold ablation.

  3. Advances in thin-film solar cells for lightweight space photovoltaic power

    Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

    1989-01-01

    The development of photovoltaic arrays beyond the next generation is discussed with attention given to the potentials of thin-film polycrystalline and amorphous cells. Of particular importance is the efficiency (the fraction of incident solar energy converted to electricity) and specific power (power to weight ratio). It is found that the radiation tolerance of thin-film materials is far greater than that of single crystal materials. CuInSe2 shows no degradation when exposed to 1-MeV electrons.

  4. Atomic force microscopy indentation of fluorocarbon thin films fabricated by plasma enhanced chemical deposition at low radio frequency power

    Sirghi, L.; Ruiz, A.; Colpo, P.; Rossi, F.

    2009-01-01

    Atomic force microscopy (AFM) indentation technique is used for characterization of mechanical properties of fluorocarbon (CF x ) thin films obtained from C 4 F 8 gas by plasma enhanced chemical vapour deposition at low r.f. power (5-30 W) and d.c. bias potential (10-80 V). This particular deposition method renders films with good hydrophobic property and high plastic compliance. Commercially available AFM probes with stiff cantilevers (10-20 N/m) and silicon sharpened tips (tip radius < 10 nm) are used for indentations and imaging of the resulted indentation imprints. Force depth curves and imprint characteristics are used for determination of film hardness, elasticity modulus and plasticity index. The measurements show that the decrease of the discharge power results in deposition of films with decreased hardness and stiffness and increased plasticity index. Nanolithography based on AFM indentation is demonstrated on thin films (thickness of 40 nm) with good plastic compliance.

  5. Nanogenerator-based dual-functional and self-powered thin patch loudspeaker or microphone for flexible electronics

    Li, Wei; Torres, David; Díaz, Ramón; Wang, Zhengjun; Wu, Changsheng; Wang, Chuan; Lin Wang, Zhong; Sepúlveda, Nelson

    2017-05-01

    Ferroelectret nanogenerators were recently introduced as a promising alternative technology for harvesting kinetic energy. Here we report the device's intrinsic properties that allow for the bidirectional conversion of energy between electrical and mechanical domains; thus extending its potential use in wearable electronics beyond the power generation realm. This electromechanical coupling, combined with their flexibility and thin film-like form, bestows dual-functional transducing capabilities to the device that are used in this work to demonstrate its use as a thin, wearable and self-powered loudspeaker or microphone patch. To determine the device's performance and applicability, sound pressure level is characterized in both space and frequency domains for three different configurations. The confirmed device's high performance is further validated through its integration in three different systems: a music-playing flag, a sound recording film and a flexible microphone for security applications.

  6. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    None

    2008-06-30

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology

  7. Deposition of thin films and surface modification by pulsed high energy density plasma

    Yan Pengxun; Yang Size

    2002-01-01

    The use of pulsed high energy density plasma is a new low temperature plasma technology for material surface treatment and thin film deposition. The authors present detailed theoretical and experimental studies of the production mechanism and physical properties of the pulsed plasma. The basic physics of the pulsed plasma-material interaction has been investigated. Diagnostic measurements show that the pulsed plasma has a high electron temperature of 10-100 eV, density of 10 14 -10 16 cm -3 , translation velocity of ∼10 -7 cm/s and power density of ∼10 4 W/cm 2 . Its use in material surface treatment combines the effects of laser surface treatment, electron beam treatment, shock wave bombardment, ion implantation, sputtering deposition and chemical vapor deposition. The metastable phase and other kinds of compounds can be produced on low temperature substrates. For thin film deposition, a high deposition ratio and strong film to substrate adhesion can be achieved. The thin film deposition and material surface modification by the pulsed plasma and related physical mechanism have been investigated. Thin film c-BN, Ti(CN), TiN, DLC and AlN materials have been produced successfully on various substrates at room temperature. A wide interface layer exists between film and substrate, resulting in strong adhesion. Metal surface properties can be improved greatly by using this kind of treatment

  8. Trend of field data on pipe wall thinning for BWR power plants

    Hakii, Junichi; Hiranuma, Naoki; Hidaka, Akitaka

    2009-01-01

    Strongly motivated by every stakeholder not to repeat Mihama Nuclear Power Station pipe rupture accident in August 2004, JSME Main Committee on Codes and Standards on Power Generation Facilities immediately launched a special task force to develop Rules on Pipe Wall Thinning Management for BWR, PWR and fossil Power Plants respectively. The authors describes the process of the development of Rules for BWR Power Plans from the view point of collections and analysis of fields data of pipe wall thinning. Through its activities, the authors confirmed the existing findings, like the effect of Oxygen injection, turbulence and dependence on coolant temperature, derived from series of laboratory-scaled experiments in FAC and coolant velocities effects in LDI. Further based upon the said proven findings with field data, they explain the adequacy of major concept of the rule such as separate treatment of FAC (Flow Accelerated Corrosion) and LDI (Liquid Droplet Impingement). (author)

  9. Optics assembly for high power laser tools

    Fraze, Jason D.; Faircloth, Brian O.; Zediker, Mark S.

    2016-06-07

    There is provided a high power laser rotational optical assembly for use with, or in high power laser tools for performing high power laser operations. In particular, the optical assembly finds applications in performing high power laser operations on, and in, remote and difficult to access locations. The optical assembly has rotational seals and bearing configurations to avoid contamination of the laser beam path and optics.

  10. Modeling, fabrication and high power optical characterization of plasmonic waveguides

    Lavrinenko, Andrei; Lysenko, Oleg

    2015-01-01

    This paper describes modeling, fabrication and high power optical characterization of thin gold films embedded in silicon dioxide. The propagation vector of surface plasmon polaritons has been calculated by the effective index method for the wavelength range of 750-1700 nm and film thickness of 15......, 30 and 45 nm. The fabrication process of such plasmonic waveguides with width in the range of 1-100 μm and their quality inspection are described. The results of optical characterization of plasmonic waveguides using a high power laser with the peak power wavelength 1064 nm show significant deviation...... from the linear propagation regime of surface plasmon polaritons at the average input power of 100 mW and above. Possible reasons for this deviation are heating of the waveguides and subsequent changes in the coupling and propagation losses....

  11. Sputtered highly oriented PZT thin films for MEMS applications

    Kalpat, Sriram S.

    Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate

  12. Highly stable thin film transistors using multilayer channel structure

    Nayak, Pradipta K.

    2015-03-09

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

  13. high power facto high power factor high power factor hybrid rectifier

    eobe

    increase in the number of electrical loads that some kind of ... components in the AC power system. Thus, suppl ... al output power; assuring reliability in ... distribution systems. This can be ...... Thesis- Califonia Institute of Technology, Capitulo.

  14. Enhancing Plasma Surface Modification using high Intensity and high Power Ultrasonic Acoustic Waves

    2010-01-01

    high intensity and high power acoustic waves (102) by at least one ultrasonic high intensity and high power acoustic wave generator (101 ), wherein the ultrasonic acoustic waves are directed to propagate towards said surface (314) of the object (100) so that a laminar boundary layer (313) of a gas...... or a mixture of gases (500) flow in contact with said solid object (100) is thinned or destructed for at least a part of said surface (314). In this way, the plasma can more efficiently access and influence the surface of the solid object to be treated by the plasma, which speeds the process time up...

  15. High magnetic field properties of Fe-pnictide thin films

    Kurth, Fritz

    2015-11-20

    The recent discovery of high-temperature superconductivity in Fe-based materials triggered worldwide efforts to investigate their fundamental properties. Despite a lot of similarities to cuprates and MgB{sub 2}, important differences like near isotropic behaviour in contrast to cuprates and the peculiar pairing symmetry of the order parameter (OP) have been reported. The OP symmetry of Fe-based superconductors (FBS) was theoretically predicted to be of so-called s± state prior to various experimental works. Still, most of the experimental results favour the s± scenario; however, definitive evidence has not yet been reported. Although no clear understanding of the superconducting mechanisms yet exists, potential applications such as high-field magnets and Josephson devices have been explored. Indeed, a lot of reports about FBS tapes, wires, and even SQUIDs have been published to this date. In this thesis, the feasibility of high-field magnet applications of FBS is addressed by studying their transport properties, involving doped BaFe{sub 2}As{sub 2} (Ba-122) and LnFeAs(O,F) [Ln=Sm and Nd]. Particularly, it is important to study physical properties in a sample form (i.e. thin films) that is close to the conditions found in applications. However, the realisation of epitaxial FBS thin films is not an easy undertaking. Recent success in growing epitaxial FBS thin films opens a new avenue to delve into transport critical current measurements. The information obtained through this research will be useful for exploring high-field magnet applications. This thesis consists of 7 chapters: Chapter 1 describes the motivation of this study, the basic background of superconductivity, and a brief summary of the thin film growth of FBS. Chapter 2 describes experimental methods employed in this study. Chapter 3 reports on the fabrication of Co-doped Ba-122 thin films on various substrates. Particular emphasis lies on the discovery of fluoride substrates to be beneficial for

  16. High power ubitron-klystron

    Balkcum, A.J.; McDermott, D.B.; Luhmann, N.C. Jr.

    1997-01-01

    A coaxial ubitron is being considered as the rf driver for the Next Linear Collider (NLC). Prior simulation of a traveling-wave ubitron using a self-consistent code found that 200 MW of power and 53 dB of gain could be achieved with 37% efficiency. In a ubiron-klystron, a series of cavities are used to obtain an even tighter electron bunch for higher efficiency. A small-signal theory of the ubitron-klystron shows that gain scales with the square of the cavity separation distance. A linear stability theory has also been developed. Verification of the stability theory has been achieved using the 2-12-D PIC code, MAGIC, and the particle-tracing code. Saturation characteristics of the amplifier will be presented using both MAGIC and a simpler self-consistent slow-timescale code currently under development. The ubitron can also operate as a compact, highly efficient oscillator. Cavities only two wiggler periods in length have yielded up to 40% rf conversion efficiency in simulation. An initial oscillator design for directed energy applications will also be presented

  17. Dielectric and acoustical high frequency characterisation of PZT thin films

    Conde, Janine; Muralt, Paul, E-mail: janine.conde@epfl.ch [Department of Materials Science, EPFL (Switzerland)

    2010-02-15

    Pb(Zr, Ti)O{sub 3} (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {l_brace}100{r_brace} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  18. High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

    Kim, Sang Woo [Nano-Materials Research Center, Korea Institute of Science and Technology, 39-1 Haweoulgog-dong, Sungbuk-gu, Seoul 136-791 (Korea, Republic of)]. E-mail: swkim@kist.re.kr; Yoon, Chong S. [Division of Advanced Materials Science, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2007-09-15

    Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization.

  19. High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

    Kim, Sang Woo; Yoon, Chong S.

    2007-01-01

    Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization

  20. Simplified High-Power Inverter

    Edwards, D. B.; Rippel, W. E.

    1984-01-01

    Solid-state inverter simplified by use of single gate-turnoff device (GTO) to commutate multiple silicon controlled rectifiers (SCR's). By eliminating conventional commutation circuitry, GTO reduces cost, size and weight. GTO commutation applicable to inverters of greater than 1-kilowatt capacity. Applications include emergency power, load leveling, drives for traction and stationary polyphase motors, and photovoltaic-power conditioning.

  1. Review of Power System Stability with High Wind Power Penetration

    Hu, Rui; Hu, Weihao; Chen, Zhe

    2015-01-01

    analyzing methods and stability improvement approaches. With increasing wind power penetration, system balancing and the reduced inertia may cause a big threaten for stable operation of power systems. To mitigate or eliminate the wind impacts for high wind penetration systems, although the practical......This paper presents an overview of researches on power system stability with high wind power penetration including analyzing methods and improvement approaches. Power system stability issues can be classified diversely according to different considerations. Each classified issue has special...... and reliable choices currently are the strong outside connections or sufficient reserve capacity constructions, many novel theories and approaches are invented to investigate the stability issues, looking forward to an extra-high penetration or totally renewable resource based power systems. These analyzing...

  2. Electronic DC transformer with high power density

    Pavlovský, M.

    2006-01-01

    This thesis is concerned with the possibilities of increasing the power density of high-power dc-dc converters with galvanic isolation. Three cornerstones for reaching high power densities are identified as: size reduction of passive components, reduction of losses particularly in active components

  3. Development of wall thinning screening system and its application to a commercial nuclear power plant

    Ryu, Kyung Ha; Hwang, Il Soon; Kim, Ji Hyun

    2013-01-01

    Highlights: • Wall loss screening system (WalSS) has been developed based on ES-DCPD method. • Screening criteria was established based on the thinning of the actual shape that occur in the power plant. • With the criteria, the WalSS gives priority of the need for inspection. • This technique was successfully applied to commercial nuclear power plant. - Abstract: A new non-destructive evaluation (NDE) method has been developed for metal pipes for the detection wall thinning. The method has been showed to be suitable for applications to electric power generation plants where flow accelerated corrosion (FAC) of carbon steel piping is a significant cause of increased maintenance and plant personnel casualty. The wall thinning screening system (WalSS) was developed in two major phases. In the first phase, the equipotential switching direct current potential drop (ES-DCPD) method was developed for piping wall (Ryu et al., 2008a, 2010). In the second phase, in this paper, a quantitative detection criteria was developed. The relative ES-DCPD change of 3.8% has been defined as the screening criteria for wall thinning schematization. This criteria means that the component with measured ES-DCPD change greater than 3.8% is called for a more comprehensive examination. In the criteria development, all variables were taken into consideration based on commercial plant piping inspection data such as initial thickness distributions, wall thinning shape and nominal thickness. The developed WalSS based on ES-DCPD was applied to a moisture separator reheater (MSR) drain line of a commercial nuclear power plant (NPP) during a scheduled overhaul. The measured ES-DCPD change was 2.16%, which is lower than the ES-DCPD criteria, identifying the pipe having adequate wall thickness. This is confirmed by site thickness inspection using ultrasonic technique (UT)

  4. High power CW linac in PNC

    Toyama, S.; Wang, Y.L.; Emoto, T.

    1994-01-01

    Power Reactor and Nuclear Fuel Development Corporation (PNC) is developing a high power electron linac for various applications. The electron beam is accelerated in CW operation to get maximum beam current of 100 mA and energy of 10 MeV. Crucial components such as a high power L-band klystron and a high power traveling wave resonant ring (TWRR) accelerator guides were designed and manufactured and their performance were examined. These design and results from the recent high power RF tests were described in this paper. (author)

  5. High Power Density Power Electronic Converters for Large Wind Turbines

    Senturk, Osman Selcuk

    . For these VSCs, high power density is required due to limited turbine nacelle space. Also, high reliability is required since maintenance cost of these remotely located wind turbines is quite high and these turbines operate under harsh operating conditions. In order to select a high power density and reliability......In large wind turbines (in MW and multi-MW ranges), which are extensively utilized in wind power plants, full-scale medium voltage (MV) multi-level (ML) voltage source converters (VSCs) are being more preferably employed nowadays for interfacing these wind turbines with electricity grids...... VSC solution for wind turbines, first, the VSC topology and the switch technology to be employed should be specified such that the highest possible power density and reliability are to be attained. Then, this qualitative approach should be complemented with the power density and reliability...

  6. Thin-Film Composite Pressure Retarded Osmosis Membranes for Sustainable Power Generation from Salinity Gradients

    Yip, Ngai Yin

    2011-05-15

    Pressure retarded osmosis has the potential to produce renewable energy from natural salinity gradients. This work presents the fabrication of thin-film composite membranes customized for high performance in pressure retarded osmosis. We also present the development of a theoretical model to predict the water flux in pressure retarded osmosis, from which we can predict the power density that can be achieved by a membrane. The model is the first to incorporate external concentration polarization, a performance limiting phenomenon that becomes significant for high-performance membranes. The fabricated membranes consist of a selective polyamide layer formed by interfacial polymerization on top of a polysulfone support layer made by phase separation. The highly porous support layer (structural parameter S = 349 μm), which minimizes internal concentration polarization, allows the transport properties of the active layer to be customized to enhance PRO performance. It is shown that a hand-cast membrane that balances permeability and selectivity (A = 5.81 L m-2 h-1 bar-1, B = 0.88 L m-2 h-1) is projected to achieve the highest potential peak power density of 10.0 W/m2 for a river water feed solution and seawater draw solution. The outstanding performance of this membrane is attributed to the high water permeability of the active layer, coupled with a moderate salt permeability and the ability of the support layer to suppress the undesirable accumulation of leaked salt in the porous support. Membranes with greater selectivity (i.e., lower salt permeability, B = 0.16 L m-2 h-1) suffered from a lower water permeability (A = 1.74 L m-2 h-1 bar-1) and would yield a lower peak power density of 6.1 W/m2, while membranes with a higher permeability and lower selectivity (A = 7.55 L m-2 h-1 bar-1, B = 5.45 L m-2 h-1) performed poorly due to severe reverse salt permeation, resulting in a similar projected peak power density of 6.1 W/m2. © 2011 American Chemical Society.

  7. High Power Fiber Laser Test Bed

    Federal Laboratory Consortium — This facility, unique within DoD, power-combines numerous cutting-edge fiber-coupled laser diode modules (FCLDM) to integrate pumping of high power rare earth-doped...

  8. Metallic substrate materials for thin film oxygen transport membranes for application in a fossil power plant

    Xing, Y.; Baumann, S.; Sebold, D.; Meulenberg, W.A.; Stoever, D. [Forschungszentrum Juelich GmbH (DE). Inst. fuer Energieforschung (IEF) - IEF-1 Materials Synthesis and Processing

    2010-07-01

    La{sub 0.58}Sr{sub 0.4}CO{sub 0.2}Fe{sub 0.8}O{sub 3-{delta}} (LSCF58428) and Ba{sub 0.5}Sr{sub 0.5}CO{sub 0.8}Fe{sub 3-{delta}} (BSCF5582) exhibit high oxygen permeability due to their high ionic and electronic conductivity. For this reason they are under discussion for application in oxygen transport membranes (OTMs) in zero-emission power plants using oxyfuel technology. A thin film membrane which can increase the oxygen flux is beneficial and a structural substrate is required. Two types of Ni-base alloys were studied as substrate material candidates with a number of advantages, such as high strength, high temperature stability, easy joining and similar thermal expansion coefficient to the selected perovskite materials. Chemical compositions and thermal expansion coefficients of Ni-base alloys were measured in this study. LSCF58428 and BSCF5582 layers were screen printed on Ni-based alloys and co-fired at high temperature in air. The microstructure and element analysis of samples were characterized by scanning electron microscopy (SEM and EDX). A Ni-base alloy, MCrAlY, with a high Al content was the most suitable substrate material, and showed better chemical compatibility with perovskite materials at high temperature than Hastelloy X, which is a chromia-forming Ni-base alloy. A reaction occurred between Sr in the perovskite and the alumina surface layers on MCr-AlY. However, the reaction zone did not increase in thickness during medium-term annealing at 800 C in air. Hence, it is expected that this reaction will not prevent the application of MCr-AlY as a substrate material. (orig.)

  9. A display module implemented by the fast high-temperatue response of carbon nanotube thin yarns.

    Wei, Yang; Liu, Peng; Jiang, Kaili; Fan, Shoushan

    2012-05-09

    Suspending superaligned multiwalled carbon nanotube (MWCNT) films were processed into CNT thin yarns, about 1 μm in diameter, by laser cutting and an ethanol atomization bath treatment. The fast high-temperature response under a vacuum was revealed by monitoring the incandescent light with a photo diode. The thin yarns can be electrically heated up to 2170 K in 0.79 mS, and the succeeding cool-down time is 0.36 mS. The fast response is attributed to the ultrasmall mass of the independent single yarn, large radiation coefficient, and improved thermal conductance through the two cool ends. The millisecond response time makes it possible to use the visible hot thin yarns as light-emitting elements of an incandescent display. A fully sealed display with 16 × 16 matrix was successfully fabricated using screen-printed thick electrodes and CNT thin yarns. It can display rolling characters with a low power consumption. More applications can be further developed based on the addressable CNT thermal arrays.

  10. High mobility transparent conducting oxides for thin film solar cells

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  11. High Power Wireless Transfer : For Charging High Power Batteries

    Gill, Himmat

    2017-01-01

    Wireless power transfer (WPT) is developing with emerging of new technologies that has made it possible to transfer electricity over certain distances without any physical contact, offering significant benefits to modern automation systems, medical applications, consumer electronic, and especially in electric vehicle systems. The goal of this study is to provide a brief review of existing compensation topologies for the loosely coupled transformer. The technique used to simulate a co...

  12. High power impulse magnetron sputtering and its applications

    Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

    2018-04-01

    High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

  13. High Power laser power conditioning system new discharge circuit research

    Li Yi; Peng Han Sheng; Zhou Pei Zhang; Zheng Wan Guo; Guo Lang Fu; Chen Li Hua; Chen De Hui; Lai Gui You; Luan Yong Ping

    2002-01-01

    The new discharge circuit of power conditioning system for high power laser is studied. The theoretical model of the main discharge circuit is established. The pre-ionization circuit is studied in experiment. In addition, the explosion energy of the new large xenon lamp is successfully measured. The conclusion has been applied to 4 x 2 amplifier system

  14. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  15. DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.

    Franklin, Aaron D

    2015-08-14

    For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices. Copyright © 2015, American Association for the Advancement of Science.

  16. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  17. Superconducting high frequency high power resonators

    Hobbis, C.; Vardiman, R.; Weinman, L.

    1974-01-01

    A niobium superconducting quarter-wave helical resonator has been designed and built. The resonator has been electron-beam welded and electropolished to produce a smooth flaw-free surface. This has been followed by an anodization to produce a 1000 A layer of Nb 2 0 5 . At the resonant frequency of approximately 15 MHz the unloaded Q was approximately equal to 4.6x10 6 with minimal dielectric support. With the resonator open to the helium bath to provide cooling, and rigidly supported by a teflon cylinder, 350 V of power were transferred at a doubly loaded Q of 3500. The extrapolation of the results to a Qsub(DL) of 1000 meet the power handling criteria of one kilowatt for the intended application. (author)

  18. Choroidal thinning in high myopia measured by optical coherence tomography

    Ikuno Y

    2013-05-01

    Full Text Available Yasushi Ikuno, Satoko Fujimoto, Yukari Jo, Tomoko Asai, Kohji NishidaDepartment of Ophthalmology, Osaka University Graduate School of Medicine, Osaka, JapanPurpose: To investigate the rate of choroidal thinning in highly myopic eyes.Patients and methods: A retrospective observational study of 37 eyes of 26 subjects (nine males and 17 females, mean age 39.6 ± 7.7 years with high myopia but no pathologies who had undergone spectral domain optical coherence tomography and repeated the test 1 year later (1 ± 0.25 year at Osaka University Hospital, Osaka, Japan. Patients older than 50 years with visual acuity worse than 20/40 or with whitish chorioretinal atrophy involving the macula were excluded. Two masked raters measured the choroidal thicknesses (CTs at the foveda, 3 mm superiorly, inferiorly, temporally, and nasally on the images and averaged the values. The second examination was about 365 days after the baseline examination. The CT reduction per year (CTRPY was defined as (CT 1 year after - baseline CT/days between the two examinations × 365. The retinal thicknesses were also investigated.Results: The CTRPY at the fovea was −1.0 ± 22.0 µm (range –50.2 to 98.5 at the fovea, –6.5 ± 24.3 µm (range −65.8 to 90.2 temporally, –0.5 ± 22.3 µm (range –27.1 to 82.5 nasally, –9.7 ± 21.7 µm (range –40.1 to 60.1 superiorly, and –1.4 ± 25.5 µm (range –85.6 to 75.2 inferiorly. There were no significant differences in the CTRPY at each location (P = 0.34. The CT decreased significantly (P < 0.05 only superiorly. The superior CTRPY was negatively correlated with the axial length (P < 0.05. The retinal thickness at the fovea did not change. Stepwise analysis for CTRPY selected axial length (P = 0.04, R2 = 0.13 and age (P = 0.08, R2 = 0.21 as relevant factors.Conclusions: The highly myopic choroid might gradually thin and be affected by many factors. Location and axial length are key factors to regulate the rate of choroidal

  19. Thin film production of ceramic high-Tc-superconductors (targets)

    1992-01-01

    Presently high-quality thin superconducting films having high T c 's may prepared by the sputtering technique. However, a large-area coating is required for an industrial application. One requirement is the availability of sputter targets with controlled and reproducible properties. By means of basic experiments with respect to powder processing, shaping and the densification process superconducting targets up to 200 mm in diameter were prepared in the Y-Ba-Cu-O- system. Additionally, targets from other systems with different geometries (e.g. ring targets) were prepared. These targets were submitted to the project partners as well as to other institutes and companies. During the course of this project the foundations for an industrial-type coating of large-area substrates were elaborated. (orig.). 9 refs., 5 tabs., 15 figs [de

  20. Thin-plate-type embedded ultrasonic transducer based on magnetostriction for the thickness monitoring of the secondary piping system of a nuclear power plant

    Heo, Tae Hoon; Cho, Seung Hyun [Center for Safety Measurement, Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of)

    2016-12-15

    Pipe wall thinning in the secondary piping system of a nuclear power plant is currently a major problem that typically affects the safety and reliability of the nuclear power plant directly. Regular in-service inspections are carried out to manage the piping system only during the overhaul. Online thickness monitoring is necessary to avoid abrupt breakage due to wall thinning. To this end, a transducer that can withstand a high-temperature environment and should be installed under the insulation layer. We propose a thin plate type of embedded ultrasonic transducer based on magnetostriction. The transducer was designed and fabricated to measure the thickness of a pipe under a high-temperature condition. A number of experimental results confirmed the validity of the present transducer.

  1. The power flow angle of acoustic waves in thin piezoelectric plates.

    Kuznetsova, Iren E; Zaitsev, Boris D; Teplykh, Andrei A; Joshi, Shrinivas G; Kuznetsova, Anastasia S

    2008-09-01

    The curves of slowness and power flow angle (PFA) of quasi-antisymmetric (A(0)) and quasi-symmetric (S(0)) Lamb waves as well as quasi-shear-horizontal (SH(0)) acoustic waves in thin plates of lithium niobate and potassium niobate of X-,Y-, and Z-cuts for various propagation directions and the influence of electrical shorting of one plate surface on these curves and PFA have been theoretically investigated. It has been found that the group velocity of such waves does not coincide with the phase velocity for the most directions of propagation. It has been also shown that S(0) and SH(0) wave are characterized by record high values of PFA and its change due to electrical shorting of the plate surface in comparison with surface and bulk acoustic waves in the same material. The most interesting results have been verified by experiment. As a whole, the results obtained may be useful for development of various devices for signal processing, for example, electrically controlled acoustic switchers.

  2. High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

    Rajanikant, Ray Jayminkumar

    The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a

  3. Highly conductive grain boundaries in copper oxide thin films

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  4. Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

    Kavitha A.

    2017-02-01

    Full Text Available The present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode and without (diode mode supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2 plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W. The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W.

  5. Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

    Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

    2018-03-27

    There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

  6. High performance thin layer chromatography profile of Cassytha filiformis

    Mythili Sathiavelu; Sathiavelu Arunachalam

    2012-01-01

    Objective: To study the phenols, flavonoids, saponin profile of the medicinal plant Cassytha filiformis (C. filiformis) using high performance thin layer chromatography (HPTLC). Methods:The extracts were tested to determine the presence of various phytochmeicals like alkaloids, phenolic compounds, flavonoids, carbohydrates, glycosides, saponins, terpenoids, tannins, fixed oils, fats and protein and aminoacids (Harborne and Harborne, 1998). HPTLC studies were carried out by Harborne and Wagner et al method. Different compositions of the mobile phase for HPTLC analysis were tested in order to obtain high resolution and reproducible peaks. Results: The results of the preliminary phytochemical studies confirm the presence of phenols, alkaloids, carbohydrates, saponins, flavanoids, terpenoids and tannins in the methanolic extracts of C. filiformis. The methanolic extracts of C. filiformis displayed the presence of 13 types of phenolic substances with 13 different Rf values ranging from 0.01 to 0.96. The results illustrated the presence of 9 different types of flavonoides with 9 different Rf values ranging from 0.01 to 0.97. The results of HPTLC analysis of saponins demonstrated the presence of 11 different types of saponins with 11 different Rf values ranging from 0.04 to 0.92. Conclusions: In the present study we observed the phenols, flavonoids, saponin profile of the medicinal plant C. filiformis using high performance thin layer chromatography (HPTLC). Hence it was concluded that the phenolic compounds present in the methonolic extract could be responsible for antioxidant activities. Plant derived antioxidants, especially phenols and flavonoids, have been described to have various properties like anticancer, antiaging and prevention of cardiovascular diseases. Furthur, separation and characterization of the bioactive compound from the plant is to be evaluated and reported in near future.

  7. Construction of sputtering system and preparation of high temperature superconducting thin films

    Kaynak, E.

    2000-01-01

    The preparation of high T c superconducting thin film is important both for the understanding of fundamental behaviours of these materials and for the investigations on the usefulness of technological applications. High quality thin films can be prepared by various kinds of techniques being used today. Among these, sputtering is the most preferred one. The primary aim of this work is the construction of a r. f. and c. magnetron sputtering system. For this goal, a magnetron sputtering system was designed and constructed having powers up to 500W (r.f.) and 1KW (d.c.) that enables to deposit thin films of various kinds of materials: metals, ceramics and magnetic materials. The temperature dependence of the electrical resistance of the films was investigated by using four-point probe method. The zero resistance and the transition with of the films were measured as 80-85 K, and 2-9 K, respectively. The A.C. susceptibility experiments were done by utilising the system that was designed and constructed. The applied field dependence of the real and imaginary components of the susceptibility that were measured between the 77-120 K temperature interval and at a fixed frequency was investigated

  8. Automated System Tests High-Power MOSFET's

    Huston, Steven W.; Wendt, Isabel O.

    1994-01-01

    Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.

  9. New concept for a high-power beam dump

    Moir, R.W.; Taylor, C.E.

    1980-01-01

    A new concept for a dump for the ion and neutral beams used in the controlled nuclear fusion program uses thin sheets of a refractory metal such as tungsten formed into troughs having semi-circular cross sections. High-velocity water flowing circumferentially removes heat by subcooled nucleate boiling. Possible advantages are modular construction, lower water-pumping power, and a lower pressure drop than in conventional beam dumps. An example design calculation is shown for a dump capable of absorbing an incident flux of 10 kW/cm 2

  10. Ultra-high current density thin-film Si diode

    Wang, Qi [Littleton, CO

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  11. Powering the High-Luminosity Triplets

    Ballarino, A.; Burnet, J. P.

    The powering of the magnets in the LHC High-Luminosity Triplets requires production and transfer of more than 150 kA of DC current. High precision power converters will be adopted, and novel High Temperature Superconducting (HTS) current leads and MgB2 based transfer lines will provide the electrical link between the power converters and the magnets. This chapter gives an overview of the systems conceived in the framework of the LHC High-Luminosity upgrade for feeding the superconducting magnet circuits. The focus is on requirements, challenges and novel developments.

  12. High current and high power superconducting rectifiers

    Kate, H.H.J. ten; Bunk, P.B.; Klundert, L.J.M. van de; Britton, R.B.

    1981-01-01

    Results on three experimental superconducting rectifiers are reported. Two of them are 1 kA low frequency flux pumps, one thermally and magnetically switched. The third is a low-current high-frequency magnetically switched rectifier which can use the mains directly. (author)

  13. High power ultrashort pulse lasers

    Perry, M.D.

    1994-01-01

    Small scale terawatt and soon even petawatt (1000 terawatt) class laser systems are made possible by application of the chirped-pulse amplification technique to solid-state lasers combined with the availability of broad bandwidth materials. These lasers make possible a new class of high gradient accelerators based on the large electric fields associated with intense laser-plasma interactions or from the intense laser field directly. Here, we concentrate on the laser technology to produce these intense pulses. Application of the smallest of these systems to the production of high brightness electron sources is also introduced

  14. Evolution of Very High Frequency Power Supplies

    Knott, Arnold; Andersen, Toke Meyer; Kamby, Peter

    2013-01-01

    The ongoing demand for smaller and lighter power supplies is driving the motivation to increase the switching frequencies of power converters. Drastic increases however come along with new challenges, namely the increase of switching losses in all components. The application of power circuits used...... in radio frequency transmission equipment helps to overcome those. However those circuits were not designed to meet the same requirements as power converters. This paper summarizes the contributions in recent years in application of very high frequency (VHF) technologies in power electronics, shows results...... of the recent advances and describes the remaining challenges. The presented results include a self-oscillating gate-drive, air core inductor optimizations, an offline LED driver with a power density of 8.9 W/cm3 and a 120 MHz, 9 W DC powered LED driver with 89 % efficiency as well as a bidirectional VHF...

  15. The NASA CSTI High Capacity Power Project

    Winter, J.; Dudenhoefer, J.; Juhasz, A.; Schwarze, G.; Patterson, R.; Ferguson, D.; Schmitz, P.; Vandersande, J.

    1992-01-01

    This paper describes the elements of NASA's CSTI High Capacity Power Project which include Systems Analysis, Stirling Power Conversion, Thermoelectric Power Conversion, Thermal Management, Power Management, Systems Diagnostics, Environmental Interactions, and Material/Structural Development. Technology advancement in all elements is required to provide the growth capability, high reliability and 7 to 10 year lifetime demanded for future space nuclear power systems. The overall project will develop and demonstrate the technology base required to provide a wide range of modular power systems compatible with the SP-100 reactor which facilitates operation during lunar and planetary day/night cycles as well as allowing spacecraft operation at any attitude or distance from the sun. Significant accomplishments in all of the project elements will be presented, along with revised goals and project timeliness recently developed

  16. HIGH AVERAGE POWER OPTICAL FEL AMPLIFIERS

    2005-01-01

    Historically, the first demonstration of the optical FEL was in an amplifier configuration at Stanford University [l]. There were other notable instances of amplifying a seed laser, such as the LLNL PALADIN amplifier [2] and the BNL ATF High-Gain Harmonic Generation FEL [3]. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance FEL's with average power of 100 kW or more. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting Energy Recovery Linacs (ERL) combine well with the high-gain FEL amplifier to produce unprecedented average power FELs. This combination has a number of advantages. In particular, we show that for a given FEL power, an FEL amplifier can introduce lower energy spread in the beam as compared to a traditional oscillator. This properly gives the ERL based FEL amplifier a great wall-plug to optical power efficiency advantage. The optics for an amplifier is simple and compact. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Linac which is under construction at Brookhaven National Laboratory's Collider-Accelerator Department

  17. Effect of sputtering power on structure, adhesion strength and corrosion resistance of nitrogen doped diamond-like carbon thin films.

    Khun, N W; Liu, E

    2011-06-01

    Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on highly conductive p-Si substrates using a DC magnetron sputtering deposition system. The DLC:N films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), contact angle measurement and micro-scratch test. The XPS and Raman results indicated that the sputtering power significantly influenced the properties of the films in terms of bonding configuration in the films. The corrosion performance of the DLC:N films was investigated in a 0.6 M NaCl solution by means of potentiodynamic polarization testing. It was found that the corrosion performance of the films could be enhanced by higher sputtering powers.

  18. ACIGA's high optical power test facility

    Ju, L; Aoun, M; Barriga, P

    2004-01-01

    Advanced laser interferometer detectors utilizing more than 100 W of laser power and with ∼10 6 W circulating laser power present many technological problems. The Australian Consortium for Interferometric Gravitational Astronomy (ACIGA) is developing a high power research facility in Gingin, north of Perth, Western Australia, which will test techniques for the next generation interferometers. In particular it will test thermal lensing compensation and control strategies for optical cavities in which optical spring effects and parametric instabilities may present major difficulties

  19. Influence of RF power on the properties of sputtered ZnO:Al thin films

    Antony, Aldrin; Carreras, Paz; Keitzl, Thomas; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

    2010-07-15

    Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2 x 10{sup -3}{omega} cm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  20. Effects of viscosity on power and hand injection of iso-osmolar iodinated contrast media through thin catheters.

    Zhang, James J; Hogstrom, Barry; Malinak, Jiri; Ikei, Nobuhiro

    2016-05-01

    It can be challenging to achieve adequate vessel opacification during percutaneous coronary interventions when using thin catheters, hand injection, and iso-osmolar contrast media (CM) such as iodixanol (Visipaque™). To explore these limitations and the possibility to overcome them with iosimenol, a novel CM. Three X-ray contrast media with different concentrations were used in this study. A series of in vitro experiments established the relationship between injection pressure and flow rate in angiography catheters under various conditions. The experiments were conducted with power and hand injections and included a double-blind evaluation of user perception. By using hand injection, it was generally not possible to reach a maximum injection pressure exceeding 50 psi. The time within which volunteers were able to complete the injections, the area under the pressure-time curve (AUC), and assessment of ease of injection all were in favor of iosimenol compared with iodixanol, especially when using the 4F thin catheter. Within the pressure ranges tested, the power injections demonstrated that the amount of iodine delivered at a fixed pressure was strongly related to viscosity but unrelated to iodine concentration. There are substantial limitations to the amount of iodine that can be delivered through thin catheters by hand injection when iso-osmolar CM with high viscosity is used. The only viable solution, besides increasing the injection pressure, is to use a CM with lower viscosity, since the cost of increasing the concentration, in terms of increased viscosity and consequent reduction in flow, is too high. Iosimenol, an iso-osmolar CM with lower viscosity than iodixanol might therefore be a better alternative when thinner catheters are preferred, especially when the radial artery is used as the access site. © The Foundation Acta Radiologica 2015.

  1. High power density supercapacitor electrodes of carbon nanotube films by electrophoretic deposition

    Du Chunsheng; Pan Ning

    2006-01-01

    Carbon nanotube thin films have been successfully fabricated by the electrophoretic deposition technique. The supercapacitors built from such thin film electrodes have a very small equivalent series resistance, and a high specific power density over 20 kW kg -1 was thus obtained. More importantly, the supercapacitors showed superior frequency response. Our study also demonstrated that these carbon nanotube thin films can serve as coating layers over ordinary current collectors to drastically enhance the electrode performance, indicating a huge potential in supercapacitor and battery manufacturing

  2. High average-power induction linacs

    Prono, D.S.; Barrett, D.; Bowles, E.; Caporaso, G.J.; Chen, Yu-Jiuan; Clark, J.C.; Coffield, F.; Newton, M.A.; Nexsen, W.; Ravenscroft, D.; Turner, W.C.; Watson, J.A.

    1989-01-01

    Induction linear accelerators (LIAs) are inherently capable of accelerating several thousand amperes of ∼ 50-ns duration pulses to > 100 MeV. In this paper the authors report progress and status in the areas of duty factor and stray power management. These technologies are vital if LIAs are to attain high average power operation. 13 figs

  3. High average-power induction linacs

    Prono, D.S.; Barrett, D.; Bowles, E.

    1989-01-01

    Induction linear accelerators (LIAs) are inherently capable of accelerating several thousand amperes of /approximately/ 50-ns duration pulses to > 100 MeV. In this paper we report progress and status in the areas of duty factor and stray power management. These technologies are vital if LIAs are to attain high average power operation. 13 figs

  4. Driver Circuit For High-Power MOSFET's

    Letzer, Kevin A.

    1991-01-01

    Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

  5. ICAN: High power neutral beam generation

    Moustaizis, S.D.; Lalousis, P.; Perrakis, K.; Auvray, P.; Larour, J.; Ducret, J.E.; Balcou, P.

    2015-01-01

    During the last few years there is an increasing interest on the development of alternative high power new negative ion source for Tokamak applications. The proposed new neutral beam device presents a number of advantages with respect to: the density current, the acceleration voltage, the relative compact dimension of the negative ion source, and the coupling of a high power laser beam for photo-neutralization of the negative ion beam. Here we numerically investigate, using a multi- fluid 1-D code, the acceleration and the extraction of high power ion beam from a Magnetically Insulated Diode (MID). The diode configuration will be coupled to a high power device capable of extracting a current up to a few kA with an accelerating voltage up to MeV. An efficiency of up to 92% of the coupling of the laser beam, is required in order to obtain a high power, up to GW, neutral beam. The new high energy, high average power, high efficiency (up to 30%) ICAN fiber laser is proposed for both the plasma generation and the photo-neutralizer configuration. (authors)

  6. Thin slab processing of acicular ferrite steels with high toughness

    Reip, Carl-Peter; Hennig, Wolfgang; Hagmann, Rolf [SMS Demag Aktiengesellschaft, Duesseldorf (Germany); Sabrudin, Bin Mohamad Suren; Susanta, Ghosh; Lee, Weng Lan [Megasteel Sdn Bhd, Banting (Malaysia)

    2005-07-01

    Near-net-shape casting processes today represent an important option in steelmaking. High productivity and low production cost as well as the variety of steel grades that can be produced plus an excellent product quality are key factors for the acceptance of such processes in markets all over the world. Today's research focuses on the production of pipe steel with special requirements in terms of toughness at low temperatures. The subject article describes the production of hot strip made from acicular ferritic / bainitic steel grades using the CSP thin-slab technology. In addition, the resulting strength and toughness levels as a function of the alloying concepts are discussed. Optimal control of the CSP process allows the production of higher-strength hot-rolled steel grades with a fine-grain acicular-ferritic/bainitic microstructure. Hot strip produced in this way is characterized by a high toughness at low temperatures. In a drop weight tear test, transition temperatures of up to -50 deg C can be achieved with a shear-fracture share of 85%. (author)

  7. High energy high repetition-rate thin-disk amplifier for OPCPA pumping

    Schulz, Michael

    2013-08-15

    The development of a pump laser system for a high power and high repetition rate optical parametric chirped-pulse amplification (OPCPA) is presented in this thesis. The OPCPA system requires pump pulse energies in the range of tens of millijoules at high repetition rates with sub-picosecond pulse durations. This can be achieved to some extend with Innoslab amplifier technology. However, scaling to higher pulse energies at high repetition rates may be problematic. With the thin-disk amplifier presented in this thesis, output energies of 140 mJ at 100 kHz repetition rate could be achieved in burst-mode operation, which is a world record for this type of laser amplifier. Due to its material and spectral properties, ytterbium doped YAG (Yb:YAG) is used as a gain medium for the high power amplifier stages. The low quantum defect and the comparatively large emission bandwidth makes this material the choice for high power operation and sub-picosecond compressed pulse durations. The output beam profile as well as the shape of the output bursts is ideal to pump an OPCPA system. An OPCPA output energy in the millijoule range with repetition rates of 100 kHz to 1 MHz is needed to generate seed pulses for the FEL and for the application as pump-probe laser at the FEL facility. Since the development of this laser system needs to meet requirements set by the Free-Electron Laser in Hamburg (FLASH), the amplifier is conceived for burst-mode operation. The main requirement is a high intra-burst pulse repetition rate of more than 100 kHz and a uniform pulse train (burst) with equal properties for every pulse. The burst-mode is an operation mode where the laser never reaches a lasing equilibrium, which means that the behavior of the amplifier is similar to a switch-on of the laser system for every burst. This makes the development of the amplifier system difficult. Therefore, an analytical model has been developed to study the amplification process during the burst. This includes the

  8. High energy high repetition-rate thin-disk amplifier for OPCPA pumping

    Schulz, Michael

    2013-08-01

    The development of a pump laser system for a high power and high repetition rate optical parametric chirped-pulse amplification (OPCPA) is presented in this thesis. The OPCPA system requires pump pulse energies in the range of tens of millijoules at high repetition rates with sub-picosecond pulse durations. This can be achieved to some extend with Innoslab amplifier technology. However, scaling to higher pulse energies at high repetition rates may be problematic. With the thin-disk amplifier presented in this thesis, output energies of 140 mJ at 100 kHz repetition rate could be achieved in burst-mode operation, which is a world record for this type of laser amplifier. Due to its material and spectral properties, ytterbium doped YAG (Yb:YAG) is used as a gain medium for the high power amplifier stages. The low quantum defect and the comparatively large emission bandwidth makes this material the choice for high power operation and sub-picosecond compressed pulse durations. The output beam profile as well as the shape of the output bursts is ideal to pump an OPCPA system. An OPCPA output energy in the millijoule range with repetition rates of 100 kHz to 1 MHz is needed to generate seed pulses for the FEL and for the application as pump-probe laser at the FEL facility. Since the development of this laser system needs to meet requirements set by the Free-Electron Laser in Hamburg (FLASH), the amplifier is conceived for burst-mode operation. The main requirement is a high intra-burst pulse repetition rate of more than 100 kHz and a uniform pulse train (burst) with equal properties for every pulse. The burst-mode is an operation mode where the laser never reaches a lasing equilibrium, which means that the behavior of the amplifier is similar to a switch-on of the laser system for every burst. This makes the development of the amplifier system difficult. Therefore, an analytical model has been developed to study the amplification process during the burst. This includes the

  9. Low Power Design with High-Level Power Estimation and Power-Aware Synthesis

    Ahuja, Sumit; Shukla, Sandeep Kumar

    2012-01-01

    Low-power ASIC/FPGA based designs are important due to the need for extended battery life, reduced form factor, and lower packaging and cooling costs for electronic devices. These products require fast turnaround time because of the increasing demand for handheld electronic devices such as cell-phones, PDAs and high performance machines for data centers. To achieve short time to market, design flows must facilitate a much shortened time-to-product requirement. High-level modeling, architectural exploration and direct synthesis of design from high level description enable this design process. This book presents novel research techniques, algorithms,methodologies and experimental results for high level power estimation and power aware high-level synthesis. Readers will learn to apply such techniques to enable design flows resulting in shorter time to market and successful low power ASIC/FPGA design. Integrates power estimation and reduction for high level synthesis, with low-power, high-level design; Shows spec...

  10. Radiation resistance of thin-film solar cells for space photovoltaic power

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  11. Applications of high-temperature superconductors in power technology

    Hull, John R

    2003-01-01

    Since the discovery of the first high-temperature superconductors (HTSs) in the late 1980s, many materials and families of materials have been discovered that exhibit superconductivity at temperatures well above 20 K. Of these, several families of HTSs have been developed for use in electrical power applications. Demonstration of devices such as motors, generators, transmission lines, transformers, fault-current limiters, and flywheels in which HTSs and bulk HTSs have been used has proceeded to ever larger scales. First-generation wire, made from bismuth-based copper oxides, was used in many demonstrations. The rapid development of second-generation wire, made by depositing thin films of yttrium-based copper oxide on metallic substrates, is expected to further accelerate commercial applications. Bulk HTSs, in which large single-grain crystals are used as basic magnetic components, have also been developed and have potential for electrical power applications

  12. High Voltage Power Transmission for Wind Energy

    Kim, Young il

    The high wind speeds and wide available area at sea have recently increased the interests on offshore wind farms in the U.S.A. As offshore wind farms become larger and are placed further from the shore, the power transmission to the onshore grid becomes a key feature. Power transmission of the offshore wind farm, in which good wind conditions and a larger installation area than an onshore site are available, requires the use of submarine cable systems. Therefore, an underground power cable system requires unique design and installation challenges not found in the overhead power cable environment. This paper presents analysis about the benefit and drawbacks of three different transmission solutions: HVAC, LCC/VSC HVDC in the grid connecting offshore wind farms and also analyzed the electrical characteristics of underground cables. In particular, loss of HV (High Voltage) subsea power of the transmission cables was evaluated by the Brakelmann's theory, taking into account the distributions of current and temperature.

  13. Gingin High Optical Power Test Facility

    Zhao, C; Blair, D G; Barrigo, P

    2006-01-01

    The Australian Consortium for Gravitational Wave Astronomy (ACIGA) in collaboration with LIGO is developing a high optical power research facility at the AIGO site, Gingin, Western Australia. Research at the facility will provide solutions to the problems that advanced gravitational wave detectors will encounter with extremely high optical power. The problems include thermal lensing and parametric instabilities. This article will present the status of the facility and the plan for the future experiments

  14. Potential of high-average-power solid state lasers

    Emmett, J.L.; Krupke, W.F.; Sooy, W.R.

    1984-01-01

    We discuss the possibility of extending solid state laser technology to high average power and of improving the efficiency of such lasers sufficiently to make them reasonable candidates for a number of demanding applications. A variety of new design concepts, materials, and techniques have emerged over the past decade that, collectively, suggest that the traditional technical limitations on power (a few hundred watts or less) and efficiency (less than 1%) can be removed. The core idea is configuring the laser medium in relatively thin, large-area plates, rather than using the traditional low-aspect-ratio rods or blocks. This presents a large surface area for cooling, and assures that deposited heat is relatively close to a cooled surface. It also minimizes the laser volume distorted by edge effects. The feasibility of such configurations is supported by recent developments in materials, fabrication processes, and optical pumps. Two types of lasers can, in principle, utilize this sheet-like gain configuration in such a way that phase and gain profiles are uniformly sampled and, to first order, yield high-quality (undistorted) beams. The zig-zag laser does this with a single plate, and should be capable of power levels up to several kilowatts. The disk laser is designed around a large number of plates, and should be capable of scaling to arbitrarily high power levels

  15. Inverter design for high frequency power distribution

    King, R. J.

    1985-01-01

    A class of simple resonantly commutated inverters are investigated for use in a high power (100 KW - 1000 KW) high frequency (10 KHz - 20 KHz) AC power distribution system. The Mapham inverter is found to provide a unique combination of large thyristor turn-off angle and good utilization factor, much better than an alternate 'current-fed' inverter. The effects of loading the Mapham inverter entirely with rectifier loads are investigated by simulation and with an experimental 3 KW 20 KHz inverter. This inverter is found to be well suited to a power system with heavy rectifier loading.

  16. ON-POWER DETECTION OF PIPE WALL-THINNED DEFECTS USING IR THERMOGRAPHY IN NPPS

    JU HYUN KIM

    2014-04-01

    Full Text Available Wall-thinned defects caused by accelerated corrosion due to fluid flow in the inner pipe appear in many structures of the secondary systems in nuclear power plants (NPPs and are a major factor in degrading the integrity of pipes. Wall-thinned defects need to be managed not only when the NPP is under maintenance but also when the NPP is in normal operation. To this end, a test technique was developed in this study to detect such wall-thinned defects based on the temperature difference on the surface of a hot pipe using infrared (IR thermography and a cooling device. Finite element analysis (FEA was conducted to examine the tendency and experimental conditions for the cooling experiment. Based on the FEA results, the equipment was configured before the cooling experiment was conducted. The IR camera was then used to detect defects in the inner pipe of the pipe specimen that had artificially induced defects. The IR thermography developed in this study is expected to help resolve the issues related to the limitations of non-destructive inspection techniques that are currently conducted for NPP secondary systems and is expected to be very useful on the NPPs site.

  17. Transparent high-performance CDSE thin-film solar cells

    Mahawela, P.; Jeedigunta, S.; Vakkalanka, S.; Ferekides, C.S.; Morel, D.L.

    2005-01-01

    Simulations indicate that 25-30% efficiency can be achieved with a four-terminal thin-film tandem structure. The bottom low band gap cell can be CuIn 1-x Ga x Se 2 , and CdSe is proposed as the top cell, as it has an ideal band gap of 1.7 eV. In addition to the efficiency requirements, the top cell must also be transparent to effectively transmit sub band gap light to the bottom cell. We have developed CdSe devices that meet many of the requirements of this tandem structure. High electronic quality CdSe has been deposited on SnO 2 and ZnO, which serve as the transparent n-type contact. The p-type transparent contact is ZnSe/Cu. Voc's of 475 mV have been achieved and can be further improved with better contacts. However, record Jsc's in excess of 17 mA/cm 2 have been achieved. This is close to the target 18 mA/cm 2 to meet the efficiency objectives. Transmission of 80% of the sub band gap radiation has been demonstrated for 2-no. muno. m-thick absorber layers. This is also close to the 85% target to achieve the overall tandem efficiency objectives. Improvement of the contact layers to achieve the Voc target is the final challenge

  18. Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

    Kobayashi, H.; Kim, W. B.; Matsumoto, T.

    2011-01-01

    We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

  19. Graphene as tunable contact for high performance thin film transistor

    Liu, Yuan

    Graphene has been one of the most extensively studied materials due to its unique band structure, the linear dispersion at the K point. It gives rise to novel phenomena, such as the anomalous quantum Hall effect, and has opened up a new category of "Fermi-Dirac" physics. Graphene has also attracted enormous attention for future electronics because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. However, graphene has zero intrinsic band gap, thus can not be used as the active channel material for logic transistors with sufficient on/off current ratio. Previous approaches to address this challenge include the induction of a transport gap in graphene nanostructures or bilayer graphene. However, these approaches have proved successful in improving the on-- off ratio of the resulting devices, but often at a severe sacrifice of the deliverable current density. Alternatively, with a finite density of states, tunable work-function and optical transparency, graphene can function as a unique tunable contact material to create a new structure of electronic devices. In this thesis, I will present my effort toward on-off ratio of graphene based vertical thin film transistor. I will include the work form four of my first author publication. I will first present my research studies on the a dramatic enhancement of the overall quantum efficiency and spectral selectivity of graphene photodetector, by coupling with plasmonic nanostructures. It is observed that metallic plasmonic nanostructures can be integrated with graphene photodetectors to greatly enhance the photocurrent and external quantum efficiency by up to 1,500%. Plasmonic nanostructures of variable resonance frequencies selectively amplify the photoresponse of graphene to light of different wavelengths, enabling highly specific detection of multicolours. Then I will show a new design of highly flexible vertical TFTs (VTFTs) with superior electrical

  20. Small high cooling power space cooler

    Nguyen, T. V.; Raab, J.; Durand, D.; Tward, E. [Northrop Grumman Aerospace Systems Redondo Beach, Ca, 90278 (United States)

    2014-01-29

    The small High Efficiency pulse tube Cooler (HEC) cooler, that has been produced and flown on a number of space infrared instruments, was originally designed to provide cooling of 10 W @ 95 K. It achieved its goal with >50% margin when limited by the 180 W output ac power of its flight electronics. It has also been produced in 2 stage configurations, typically for simultaneously cooling of focal planes to temperatures as low as 35 K and optics at higher temperatures. The need for even higher cooling power in such a low mass cryocooler is motivated by the advent of large focal plane arrays. With the current availability at NGAS of much larger power cryocooler flight electronics, reliable long term operation in space with much larger cooling powers is now possible with the flight proven 4 kg HEC mechanical cooler. Even though the single stage cooler design can be re-qualified for those larger input powers without design change, we redesigned both the linear and coaxial version passive pulse tube cold heads to re-optimize them for high power cooling at temperatures above 130 K while rejecting heat to 300 K. Small changes to the regenerator packing, the re-optimization of the tuned inertance and no change to the compressor resulted in the increased performance at 150 K. The cooler operating at 290 W input power achieves 35 W@ 150 K corresponding to a specific cooling power at 150 K of 8.25 W/W and a very high specific power of 72.5 W/Kg. At these powers the cooler still maintains large stroke, thermal and current margins. In this paper we will present the measured data and the changes to this flight proven cooler that were made to achieve this increased performance.

  1. Thulium heat source for high-endurance and high-energy density power systems

    Walter, C.E.; Kammeraad, J.E.; Van Konynenburg, R.; VanSant, J.H.

    1991-05-01

    We are studying the performance characteristics of radioisotope heat source designs for high-endurance and high-energy-density power systems that use thulium-170. Heat sources in the power range of 5--50 kW th coupled with a power conversion efficiency of ∼30%, can easily satisfy current missions for autonomous underwater vehicles. New naval missions will be possible because thulium isotope power systems have a factor of one-to-two hundred higher endurance and energy density than chemical and electrochemical systems. Thulium-170 also has several other attractive features, including the fact that it decays to stable ytterbium-170 with a half-life of four months. For terrestrial applications, refueling on that time scale should be acceptable in view of the advantage of its benign decay. The heat source designs we are studying account for the requirements of isotope production, shielding, and integration with power conversion components. These requirements are driven by environmental and safety considerations. Thulium is present in the form of thin refractory thulia disks that allow power conversion at high peak temperature. We give estimates of power system state points, performance, mass, and volume characteristics. Monte Carlo radiation analysis provides a detailed assessment of shield requirements and heat transfer under normal and distressed conditions is also considered. 11 refs., 7 figs., 4 tabs

  2. Simultaneous ultra-long data retention and low power based on Ge10Sb90/SiO2 multilayer thin films

    You, Haipeng; Hu, Yifeng; Zhu, Xiaoqin; Zou, Hua; Song, Sannian; Song, Zhitang

    2018-02-01

    In this article, Ge10Sb90/SiO2 multilayer thin films were prepared to improve thermal stability and data retention for phase change memory. Compared with Ge10Sb90 monolayer thin film, Ge10Sb90 (1 nm)/SiO2 (9 nm) multilayer thin film had higher crystallization temperature and resistance contrast between amorphous and crystalline states. Annealed Ge10Sb90 (1 nm)/SiO2 (9 nm) had uniform grain with the size of 15.71 nm. After annealing, the root-mean-square surface roughness for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film increased slightly from 0.45 to 0.53 nm. The amorphization time for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film (2.29 ns) is shorter than Ge2Sb2Te5 (3.56 ns). The threshold voltage of a cell based on Ge10Sb90 (1 nm)/SiO2 (9 nm) (3.57 V) was smaller than GST (4.18 V). The results indicated that Ge10Sb90/SiO2 was a promising phase change thin film with high thermal ability and low power consumption for phase change memory application.

  3. Erosion corrosion in power plant piping systems - Calculation code for predicting wall thinning

    Kastner, W.; Erve, M.; Henzel, N.; Stellwag, B.

    1990-01-01

    Extensive experimental and theoretical investigations have been performed to develop a calculation code for wall thinning due to erosion corrosion in power plant piping systems. The so-called WATHEC code can be applied to single-phase water flow as well as to two-phase water/steam flow. Only input data which are available to the operator of the plant are taken into consideration. Together with a continuously updated erosion corrosion data base the calculation code forms one element of a weak point analysis for power plant piping systems which can be applied to minimize material loss due to erosion corrosion, reduce non-destructive testing and curtail monitoring programs for piping systems, recommend life-extending measures. (author). 12 refs, 17 figs

  4. Multifunctional Architectures Constructing of PANI Nanoneedle Arrays on MoS2 Thin Nanosheets for High-Energy Supercapacitors.

    Zhu, Jixin; Sun, Wenping; Yang, Dan; Zhang, Yu; Hoon, Hng Huey; Zhang, Hua; Yan, Qingyu

    2015-09-02

    Multifunctional MoS2 @PANI (polyaniline) pseudo-supercapacitor electrodes consisting of MoS2 thin nanosheets and PANI nanoarrays are fabricated via a large-scale approach. The superior capacitance retention is retained up to 91% after 4000 cycles and a high energy density of 106 Wh kg(-1) is delivered at a power density of 106 kW kg(-1) . © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. probing the atmosphere with high power, high resolution radars

    Hardy, K. R.; Katz, I.

    1969-01-01

    Observations of radar echoes from the clear atmosphere are presented and the scattering mechanisms responsible for the two basic types of clear-air echoes are discussed. The commonly observed dot echo originates from a point in space and usually shows little variation in echo intensity over periods of about 0.1 second. The second type of clear-air radar echo appears diffuse in space, and signal intensities vary considerably over periods of less than 0.1 second. The echoes often occur in thin horizontal layers or as boundaries of convective activity; these are characterized by sharp gradients of refractive index. Some features of clear-air atmospheric structures as observed with radar are presented. These structures include thin stable inversions, convective thermals, Benard convection cells, breaking gravity waves, and high tropospheric layers which are sufficiently turbulent to affect aircraft.

  6. Metallic plates lens focalizing a high power microwave beam

    Rebuffi, L.

    1987-08-01

    A metallic grating composed of thin parallel plates opportunely spaced, permits to correct the phase of an incident high power microwave beam. In this work we show how it is possible to obtain a beam focalisation (lens), a beam deflection (prisma), or a variation in the polarization (polarizer) using parallel metallic plates. The main design parameters are here presented, in order to obtain the wanted phase modification keeping low the diffraction, the reflected power, the ohmic losses and avoiding breakdowns. Following the given criteria, a metallic plate lens has been realized to focalize the 200 KW, 100 msec 60 GHz beam used in the ECRH experiment on the TFR tokamak. The experimental beam concentration followed satisfactory the design requirements. In fact, the maximum intensity increased about twice the value without lens. In correspondence of this distance a reduction of the beam size of about 50% have been measured for the -3 dB radius. The lens supported high power tests without breakdowns or increase of the reflected power

  7. High power neutral beam injection in LHD

    Tsumori, K.; Takeiri, Y.; Nagaoka, K.

    2005-01-01

    The results of high power injection with a neutral beam injection (NBI) system for the large helical device (LHD) are reported. The system consists of three beam-lines, and two hydrogen negative ion (H - ion) sources are installed in each beam-line. In order to improve the injection power, the new beam accelerator with multi-slot grounded grid (MSGG) has been developed and applied to one of the beam-lines. Using the accelerator, the maximum powers of 5.7 MW were achieved in 2003 and 2004, and the energy of 189 keV reached at maximum. The power and energy exceeded the design values of the individual beam-line for LHD. The other beam-lines also increased their injection power up to about 4 MW, and the total injection power of 13.1 MW was achieved with three beam-lines in 2003. Although the accelerator had an advantage in high power beam injection, it involved a demerit in the beam focal condition. The disadvantage was resolved by modifying the aperture shapes of the steering grid. (author)

  8. High Flux Isotope Reactor power upgrade status

    Rothrock, R.B.; Hale, R.E.; Cheverton, R.D.

    1997-01-01

    A return to 100-MW operation is being planned for the High Flux Isotope Reactor (HFIR). Recent improvements in fuel element manufacturing procedures and inspection equipment will be exploited to reduce hot spot and hot streak factors sufficiently to permit the power upgrade without an increase in primary coolant pressure. Fresh fuel elements already fabricated for future use are being evaluated individually for power upgrade potential based on their measured coolant channel dimensions

  9. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of technologies to manufacture applied type thin film solar cells with new structure and development of high-efficiency hybrid thin film/sheet solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (oyogata shin kozo usumaku taiyo denchi no seizo gijutsu kaihatsu (kokoritsu hybrid gata usumaku / sheet taiyo denchi no seizo gijutsu kaihatsu))

    NONE

    2000-03-01

    With an objective to develop low-cost and high-efficiency hybrid thin film/sheet solar cells, research and development has been performed. This paper summarizes the achievements in fiscal 1999. The research is related to a hybrid construction, in which the upper cells of amorphous silicon thin film are formed on the lower cells bonded with micro-crystalline silicon thin film relative to a poly-crystalline silicon sheet. In the technology to form the upper cells, a pin-construction using amorphous silicon thin film made by using the plasma CVD process was adopted, whereas an open circuit voltage of 1.45V, a short circuit current of 13.6 mA/cm{sup 2}, and a conversion efficiency of 13.5% were obtained. In the technology to form the substrate for the lower cells, formation of flat silicon thin plate that can be peeled off was identified as a result of adopting the construction in which a graphite substrate is provided on a rotating cooling body of 12-prism type. With regard to the technology to bond and form the lower cells, electrical properties of hetero-bonded cells were discussed, and an open circuit voltage of 0.605V and a conversion efficiency of 14.3% were obtained as a result of enhancing the film quality and optimizing the film thickness. (NEDO)

  10. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-01-01

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

  11. Advanced High Voltage Power Device Concepts

    Baliga, B Jayant

    2012-01-01

    Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and distribution equipment, and for very high power motor control in electric trains and steel-mills. Since these devices must be capable of supporting more than 5000-volts in the blocking mode, this books covers operation of devices rated at 5,000-V, 10,000-V and 20,000-V. Advanced concepts (the MCT, the BRT, and the EST) that enable MOS-gated control of power thyristor structures are described and analyzed in detail. In addition, detailed analyses of the silicon IGBT, as well as the silicon carbide MOSFET and IGBT, are provided for comparison purposes. Throughout the book, analytical models are generated to give a better understanding of the physics of operation for all the structures. This book provides readers with: The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets;  Analytical formulations for all the device ...

  12. Optimizing the design of very high power, high performance converters

    Edwards, R.J.; Tiagha, E.A.; Ganetis, G.; Nawrocky, R.J.

    1980-01-01

    This paper describes how various technologies are used to achieve the desired performance in a high current magnet power converter system. It is hoped that the discussions of the design approaches taken will be applicable to other power supply systems where stringent requirements in stability, accuracy and reliability must be met

  13. Diffusively cooled thin-sheath high-repetition-rate TEA and TEMA lasers

    Yatsiv, Shaul; Gabay, Amnon; Sintov, Yoav

    1993-05-01

    Transverse electric atmospheric (TEA), or multi atmospheric (TEMA) lasers deliver intense short laser pulses of considerable energies. Recurrent high repetition rate pulse trains afford substantial average power levels. In a high rep-rate operation the gas flows across the cavity and is externally cooled to maintain a reasonably low temperature. The gas flow gear and heat exchanger are bulky and costly. In this work we present a repetitively pulsed TEA or TEMA laser that combines energy and peak power features in an individual pulse with the substantial average power levels of a pulse train in a thin layer of gas. Excess heat is disposed of, by conduction through the gas, to cooled enclosing walls. The gas does not flow. The method applies to vibrational transition molecular lasers in the infrared, where elevated temperatures are deleterious to the laser operation. The gist of the method draws on the law that heat conductivity in gases does not depend on their pressure. The fact lends unique operational flexibility and compactness, desirable for industrial and research purposes.

  14. The Jefferson Lab High Power Light Source

    James R. Boyce

    2006-01-01

    Jefferson Lab has designed, built and operated two high average power free-electron lasers (FEL) using superconducting RF (SRF) technology and energy recovery techniques. Between 1999-2001 Jefferson Lab operated the IR Demo FEL. This device produced over 2 kW in the mid-infrared, in addition to producing world record average powers in the visible (50 W), ultraviolet (10 W) and terahertz range (50 W) for tunable, short-pulse (< ps) light. This FEL was the first high power demonstration of an accelerator configuration that is being exploited for a number of new accelerator-driven light source facilities that are currently under design or construction. The driver accelerator for the IR Demo FEL uses an Energy Recovered Linac (ERL) configuration that improves the energy efficiency and lowers both the capital and operating cost of such devices by recovering most of the power in the spent electron beam after optical power is extracted from the beam. The IR Demo FEL was de-commissioned in late 2001 for an upgraded FEL for extending the IR power to over 10 kW and the ultraviolet power to over 1 kW. The FEL Upgrade achieved 10 kW of average power in the mid-IR (6 microns) in July of 2004, and its IR operation currently is being extended down to 1 micron. In addition, we have demonstrated the capability of on/off cycling and recovering over a megawatt of electron beam power without diminishing machine performance. A complementary UV FEL will come on-line within the next year. This paper presents a summary of the FEL characteristics, user community accomplishments with the IR Demo, and planned user experiments.

  15. High power infrared QCLs: advances and applications

    Patel, C. Kumar N.

    2012-01-01

    QCLs are becoming the most important sources of laser radiation in the midwave infrared (MWIR) and longwave infrared (LWIR) regions because of their size, weight, power and reliability advantages over other laser sources in the same spectral regions. The availability of multiwatt RT operation QCLs from 3.5 μm to >16 μm with wall plug efficiency of 10% or higher is hastening the replacement of traditional sources such as OPOs and OPSELs in many applications. QCLs can replace CO2 lasers in many low power applications. Of the two leading groups in improvements in QCL performance, Pranalytica is the commercial organization that has been supplying the highest performance QCLs to various customers for over four year. Using a new QCL design concept, the non-resonant extraction [1], we have achieved CW/RT power of >4.7 W and WPE of >17% in the 4.4 μm - 5.0 μm region. In the LWIR region, we have recently demonstrated QCLs with CW/RT power exceeding 1 W with WPE of nearly 10 % in the 7.0 μm-10.0 μm region. In general, the high power CW/RT operation requires use of TECs to maintain QCLs at appropriate operating temperatures. However, TECs consume additional electrical power, which is not desirable for handheld, battery-operated applications, where system power conversion efficiency is more important than just the QCL chip level power conversion efficiency. In high duty cycle pulsed (quasi-CW) mode, the QCLs can be operated without TECs and have produced nearly the same average power as that available in CW mode with TECs. Multiwatt average powers are obtained even in ambient T>70°C, with true efficiency of electrical power-to-optical power conversion being above 10%. Because of the availability of QCLs with multiwatt power outputs and wavelength range covering a spectral region from ~3.5 μm to >16 μm, the QCLs have found instantaneous acceptance for insertion into multitude of defense and homeland security applications, including laser sources for infrared

  16. Synthesis of ultra-thin tellurium nanoflakes on textiles for high-performance flexible and wearable nanogenerators

    He, Wen; Van Ngoc, Huynh; Qian, Yong Teng; Hwang, Jae Seok; Yan, Ya Ping [Department of Physics and Interdisciplinary Course of Physics and Chemistry, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do (Korea, Republic of); Choi, Hongsoo [Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 711-873, Daegu (Korea, Republic of); Kang, Dae Joon, E-mail: djkang@skku.edu [Department of Physics and Interdisciplinary Course of Physics and Chemistry, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do (Korea, Republic of)

    2017-01-15

    Highlights: • Ultra-thin tellurium (Te) nanoflakes were successfully grown on textile and used as an active piezoelectric material. • Te nanoflake nanogenerator device was systematically studied by bending and compressing test. • The ultra-high output power during compressing test can light up 10 LEDs without any external power source. • The device can offer a breakthrough in applying tellurium nanoflakes into high-performance flexible and wearable piezoelectric nanogenerator. - Abstract: We report that ultra-thin tellurium (Te) nanoflakes were successfully grown on a sample of a gold-coated textile, which then was used as an active piezoelectric material. An output voltage of 4 V and a current of 300 nA were obtained from the bending test under a driving frequency of 10 Hz. To test the practical applications, Te nanoflake nanogenerator (TFNG) device was attached to the subject’s arm, and mechanical energy was converted to electrical energy by means of periodic arm-bending motions. The optimized open-circuit voltage and short-circuit current density of approximately 125 V and 17 μA/cm{sup 2}, respectively, were observed when a TFNG device underwent a compression test with a compressive force of 8 N and driving frequency of 10 Hz. This high-power generation enabled the instantaneous powering of 10 green light-emitting diodes that shone without any assistance from an external power source.

  17. The NASA CSTI High Capacity Power Program

    Winter, J.M.

    1991-09-01

    The SP-100 program was established in 1983 by DOD, DOE, and NASA as a joint program to develop the technology necessary for space nuclear power systems for military and civil applications. During 1986 and 1987, the NASA Advanced Technology Program was responsible for maintaining the momentum of promising technology advancement efforts started during Phase 1 of SP-100 and to strengthen, in key areas, the chances for successful development and growth capability of space nuclear reactor power systems for future space applications. In 1988, the NASA Advanced Technology Program was incorporated into NASA's new Civil Space Technology Initiative (CSTI). The CSTI program was established to provide the foundation for technology development in automation and robotics, information, propulsion, and power. The CSTI High Capacity Power Program builds on the technology efforts of the SP-100 program, incorporates the previous NASA advanced technology project, and provides a bridge to the NASA exploration technology programs. The elements of CSTI high capacity power development include conversion systems: Stirling and thermoelectric, thermal management, power management, system diagnostics, and environmental interactions. Technology advancement in all areas, including materials, is required to provide the growth capability, high reliability, and 7 to 10 year lifetime demanded for future space nuclear power systems. The overall program will develop and demonstrate the technology base required to provide a wide range of modular power systems while minimizing the impact of day/night operations as well as attitudes and distance from the Sun. Significant accomplishments in all of the program elements will be discussed, along with revised goals and project timelines recently developed

  18. High-power VCSELs for smart munitions

    Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

    2006-08-01

    The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

  19. High power all solid state VUV lasers

    Zhang, Shen-jin; Cui, Da-fu; Zhang, Feng-feng; Xu, Zhi; Wang, Zhi-min; Yang, Feng; Zong, Nan; Tu, Wei; Chen, Ying; Xu, Hong-yan; Xu, Feng-liang; Peng, Qin-jun; Wang, Xiao-yang; Chen, Chuang-tian; Xu, Zu-yan

    2014-01-01

    Highlights: • Polarization and pulse repetition rate adjustable ps 177.3 nm laser was developed. • Wavelength tunable ns, ps and fs VUV lasers were developed. • High power ns 177.3 nm laser with narrow linewidth was investigated. - Abstract: We report the investigation on the high power all solid state vacuum ultra-violet (VUV) lasers by means of nonlinear frequency conversion with KBe 2 BO 3 F 2 (KBBF) nonlinear crystal. Several all solid state VUV lasers have developed in our group, including polarization and pulse repetition rate adjustable picosecond 177.3 nm VUV laser, wavelength tunable nanosecond, picosecond and femtosecond VUV lasers, high power ns 177.3 nm laser with narrow linewidth. The VUV lasers have impact, accurate and precise advantage

  20. High Power High Efficiency Diode Laser Stack for Processing

    Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

    2018-03-01

    High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

  1. High to ultra-high power electrical energy storage.

    Sherrill, Stefanie A; Banerjee, Parag; Rubloff, Gary W; Lee, Sang Bok

    2011-12-14

    High power electrical energy storage systems are becoming critical devices for advanced energy storage technology. This is true in part due to their high rate capabilities and moderate energy densities which allow them to capture power efficiently from evanescent, renewable energy sources. High power systems include both electrochemical capacitors and electrostatic capacitors. These devices have fast charging and discharging rates, supplying energy within seconds or less. Recent research has focused on increasing power and energy density of the devices using advanced materials and novel architectural design. An increase in understanding of structure-property relationships in nanomaterials and interfaces and the ability to control nanostructures precisely has led to an immense improvement in the performance characteristics of these devices. In this review, we discuss the recent advances for both electrochemical and electrostatic capacitors as high power electrical energy storage systems, and propose directions and challenges for the future. We asses the opportunities in nanostructure-based high power electrical energy storage devices and include electrochemical and electrostatic capacitors for their potential to open the door to a new regime of power energy.

  2. Highly Hydrophilic Thin-Film Composite Forward Osmosis Membranes Functionalized with Surface-Tailored Nanoparticles

    Tiraferri, Alberto; Kang, Yan; Giannelis, Emmanuel P.; Elimelech, Menachem

    2012-01-01

    Thin-film composite polyamide membranes are state-of-the-art materials for membrane-based water purification and desalination processes, which require both high rejection of contaminants and high water permeabilities. However, these membranes

  3. Powersail High Power Propulsion System Design Study

    Gulczinski, Frank S., III

    2000-11-01

    A desire by the United States Air Force to exploit the space environment has led to a need for increased on-orbit electrical power availability. To enable this, the Air Force Research Laboratory Space Vehicles Directorate (AFRL/ VS) is developing Powersail: a two-phased program to demonstrate high power (100 kW to 1 MW) capability in space using a deployable, flexible solar array connected to the host spacecraft using a slack umbilical. The first phase will be a proof-of-concept demonstration at 50 kW, followed by the second phase, an operational system at full power. In support of this program, the AFRL propulsion Directorate's Spacecraft Propulsion Branch (AFRL/PRS ) at Edwards AFB has commissioned a design study of the Powersail High Power Propulsion System. The purpose of this study, the results of which are summarized in this paper, is to perform mission and design trades to identify potential full-power applications (both near-Earth and interplanetary) and the corresponding propulsion system requirements and design. The design study shall farther identify a suitable low power demonstration flight that maximizes risk reduction for the fully operational system. This propulsion system is expected to be threefold: (1) primary propulsion for moving the entire vehicle, (2) a propulsion unit that maintains the solar array position relative to the host spacecraft, and (3) control propulsion for maintaining proper orientation for the flexible solar array.

  4. Reactor G1: high power experiments

    Laage, F. de; Teste du Baillet, A.; Veyssiere, A.; Wanner, G.

    1957-01-01

    The experiments carried out in the starting-up programme of the reactor G1 comprised a series of tests at high power, which allowed the following points to be studied: 1- Effect of poisoning by Xenon (absolute value, evolution). 2- Temperature coefficients of the uranium and graphite for a temperature distribution corresponding to heating by fission. 3- Effect of the pressure (due to the coiling system) on the reactivity. 4- Calibration of the security rods as a function of their position in the pile (1). 5- Temperature distribution of the graphite, the sheathing, the uranium and the air leaving the canals, in a pile running normally at high power. 6- Neutron flux distribution in a pile running normally at high power. 7- Determination of the power by nuclear and thermodynamic methods. These experiments have been carried out under two very different pile conditions. From the 1. to the 15. of August 1956, a series of power increases, followed by periods of stabilisation, were induced in a pile containing uranium only, in 457 canals, amounting to about 34 tons of fuel. A knowledge of the efficiency of the control rods in such a pile has made it possible to measure with good accuracy the principal effects at high temperatures, that is, to deal with points 1, 2, 3, 5. Flux charts giving information on the variations of the material Laplacian and extrapolation lengths in the reflector have been drawn up. Finally the thermodynamic power has been measured under good conditions, in spite of some installation difficulties. On September 16, the pile had its final charge of 100 tons. All the canals were loaded, 1,234 with uranium and 53 (i.e. exactly 4 per cent of the total number) with thorium uniformly distributed in a square lattice of 100 cm side. Since technical difficulties prevented the calibration of the control rods, the measurements were limited to the determination of the thermodynamic power and the temperature distributions (points 5 and 7). This report will

  5. Compact high-power terahertz radiation source

    G. A. Krafft

    2004-06-01

    Full Text Available In this paper a new type of THz radiation source, based on recirculating an electron beam through a high gradient superconducting radio frequency cavity, and using this beam to drive a standard electromagnetic undulator on the return leg, is discussed. Because the beam is recirculated and not stored, short bunches may be produced that radiate coherently in the undulator, yielding exceptionally high average THz power for relatively low average beam power. Deceleration from the coherent emission, and the detuning it causes, limits the charge-per-bunch possible in such a device.

  6. High power RF transmission line component development

    Hong, B. G.; Hwang, C. K.; Bae, Y. D.; Yoon, J. S.; Wang, S. J.; Gu, S. H.; Yang, J. R.; Hahm, Y. S.; Oh, G. S.; Lee, J. R.; Lee, W. I.; Park, S. H.; Kang, M. S.; Oh, S. H.; Lee, W.I.

    1999-12-01

    We developed the liquid stub and phase shifter which are the key high RF power transmission line components. They show reliable operation characteristics and increased insulation capability, and reduced the size by using liquid (silicon oil, dielectric constant ε=2.72) instead of gas for insulating dielectric material. They do not have finger stock for the electric contact so the local temperature rise due to irregular contact and RF breakdown due to scratch in conductor are prevented. They can be utilized in broadcasting, radar facility which require high RF power transmission. Moreover, they are key components in RF heating system for fusion reactor. (author)

  7. High power RF transmission line component development

    Hong, B. G.; Hwang, C. K.; Bae, Y. D.; Yoon, J. S.; Wang, S. J.; Gu, S. H.; Yang, J. R.; Hahm, Y. S.; Oh, G. S.; Lee, J. R.; Lee, W. I.; Park, S. H.; Kang, M. S.; Oh, S. H.; Lee, W.I

    1999-12-01

    We developed the liquid stub and phase shifter which are the key high RF power transmission line components. They show reliable operation characteristics and increased insulation capability, and reduced the size by using liquid (silicon oil, dielectric constant {epsilon}=2.72) instead of gas for insulating dielectric material. They do not have finger stock for the electric contact so the local temperature rise due to irregular contact and RF breakdown due to scratch in conductor are prevented. They can be utilized in broadcasting, radar facility which require high RF power transmission. Moreover, they are key components in RF heating system for fusion reactor. (author)

  8. High voltage superconducting switch for power application

    Mawardi, O.; Ferendeci, A.; Gattozzi, A.

    1983-01-01

    This paper reports the development of a novel interrupter which meets the requirements of a high voltage direct current (HVDC) power switch and at the same time doubles as a current limiter. The basic concept of the interrupter makes use of a fast superconducting, high capacity (SHIC) switch that carries the full load current while in the superconducting state and reverts to the normal resistive state when triggered. Typical design parameters are examined for the case of a HVDC transmission line handling 2.5KA at 150KVDC. The result is a power switch with superior performance and smaller size than the ones reported to date

  9. Advances in Very High Frequency Power Conversion

    Kovacevic, Milovan

    Resonant and quasi-resonant converters operated at frequencies above 30 MHz have attracted special attention in the last two decades. Compared to conventional converters operated at ~100 kHz, they offer significant advantages: smaller volume and weight, lower cost, and faster transient performance....... Excellent performance and small size of magnetic components and capacitors at very high frequencies, along with constant advances in performance of power semiconductor devices, suggests a sizable shift in consumer power supplies market into this area in the near future. To operate dc-dc converter power...... method provides low complexity and low gate loss simultaneously. A direct design synthesis method is provided for resonant SEPIC converters employing this technique. Most experimental prototypes were developed using low cost, commercially available power semiconductors. Due to very fast transient...

  10. Advanced Output Coupling for High Power Gyrotrons

    Read, Michael [Calabazas Creek Research, Inc., San Mateo, CA (United States); Ives, Robert Lawrence [Calabazas Creek Research, Inc., San Mateo, CA (United States); Marsden, David [Calabazas Creek Research, Inc., San Mateo, CA (United States); Collins, George [Calabazas Creek Research, Inc., San Mateo, CA (United States); Temkin, Richard [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Guss, William [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Lohr, John [General Atomics, La Jolla, CA (United States); Neilson, Jeffrey [Lexam Research, Redwood City, CA (United States); Bui, Thuc [Calabazas Creek Research, Inc., San Mateo, CA (United States)

    2016-11-28

    The Phase II program developed an internal RF coupler that transforms the whispering gallery RF mode produced in gyrotron cavities to an HE11 waveguide mode propagating in corrugated waveguide. This power is extracted from the vacuum using a broadband, chemical vapor deposited (CVD) diamond, Brewster angle window capable of transmitting more than 1.5 MW CW of RF power over a broad range of frequencies. This coupling system eliminates the Mirror Optical Units now required to externally couple Gaussian output power into corrugated waveguide, significantly reducing system cost and increasing efficiency. The program simulated the performance using a broad range of advanced computer codes to optimize the design. Both a direct coupler and Brewster angle window were built and tested at low and high power. Test results confirmed the performance of both devices and demonstrated they are capable of achieving the required performance for scientific, defense, industrial, and medical applications.

  11. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  12. Colored ultra-thin hybrid photovoltaics with high quantum efficiency for decorative PV applications (Presentation Recording)

    Guo, L. Jay

    2015-10-01

    This talk will describe an approach to create architecturally compatible and decorative thin-film-based hybrid photovoltaics [1]. Most current solar panels are fabricated via complex processes using expensive semiconductor materials, and they are rigid and heavy with a dull, black appearance. As a result of their non-aesthetic appearance and weight, they are primarily installed on rooftops to minimize their negative impact on building appearance. Recently we introduced dual-function solar cells based on ultra-thin dopant-free amorphous silicon embedded in an optical cavity that not only efficiently extract the photogenerated carriers but also display distinctive colors with the desired angle-insensitive appearances [1,2]. The angle-insensitive behavior is the result of an interesting phase cancellation effect in the optical cavity with respect to angle of light propagation [3]. In order to produce the desired optical effect, the semiconductor layer should be ultra-thin and the traditional doped layers need to be eliminated. We adopted the approach of employing charge transport/blocking layers used in organic solar cells to meet this demand. We showed that the ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell can transmit desired wavelength of light and that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges. This is because the a-Si layer thickness is smaller than the charge diffusion length, therefore the electron-hole recombination is strongly suppressed in such ultra-thin layer. Reflective colored PVs can be made in a similar fashion. Light-energy-harvesting colored signage was demonstrated. Furthermore, a cascaded photovoltaics scheme based on tunable spectrum splitting can be employed to increase power efficiency by absorbing a broader band of light energy. Our work provides a guideline for optimizing a photoactive layer thickness in high efficiency hybrid PV design, which can be

  13. Thin Mirror Shaping Technology for High-Throughput X-ray Telescopes

    Schattenburg, Mark

    This proposal is submitted to the NASA Research Opportunities in Space and Earth Sciences program (ROSES-2012) in response to NASA Research Announcement NNH12ZDA001N- APRA. It is targeted to the Astronomy and Astrophysics Research and Analysis (APRA) program element under the Supporting Technology category. Powerful x-ray telescope mirrors are critical components of a raft of small-to-large mission concepts under consideration by NASA. The science questions addressed by these missions have certainly never been more compelling and the need to fulfill NASA s core missions of exploring the universe and strengthening our nation s technology base has never been greater. Unfortunately, budgetary constraints are driving NASA to consider the cost/benefit and risk factors of new missions more carefully than ever. New technology for producing x-ray telescopes with increased resolution and collecting area, while holding down cost, are key to meeting these goals and sustaining a thriving high-energy astrophysics enterprise in the US. We propose to develop advanced technology which will lead to thin-shell x-ray telescope mirrors rivaling the Chandra x-ray telescope in spatial resolution but with 10-100X larger area all at significantly reduced weight, risk and cost. The proposed effort builds on previous research at MIT and complements NASA-supported research at other institutions. We are currently pursuing two thin-mirror technology development tracks which we propose to extend and accelerate with NASA support. The first research track utilizes rapidly-maturing thermal glass slumping technology which uses porous ceramic air-bearing mandrels to shape glass mirrors without touching, thus avoiding surface-induced mid-range spatial frequency ripples. A second research track seeks to remove any remaining mid- to long-range errors in mirrors by using scanning ion-beam implant to impart small, highly deterministic and very stable amounts of stress into thin glass, utilizing local

  14. High Average Power, High Energy Short Pulse Fiber Laser System

    Messerly, M J

    2007-11-13

    Recently continuous wave fiber laser systems with output powers in excess of 500W with good beam quality have been demonstrated [1]. High energy, ultrafast, chirped pulsed fiber laser systems have achieved record output energies of 1mJ [2]. However, these high-energy systems have not been scaled beyond a few watts of average output power. Fiber laser systems are attractive for many applications because they offer the promise of high efficiency, compact, robust systems that are turn key. Applications such as cutting, drilling and materials processing, front end systems for high energy pulsed lasers (such as petawatts) and laser based sources of high spatial coherence, high flux x-rays all require high energy short pulses and two of the three of these applications also require high average power. The challenge in creating a high energy chirped pulse fiber laser system is to find a way to scale the output energy while avoiding nonlinear effects and maintaining good beam quality in the amplifier fiber. To this end, our 3-year LDRD program sought to demonstrate a high energy, high average power fiber laser system. This work included exploring designs of large mode area optical fiber amplifiers for high energy systems as well as understanding the issues associated chirped pulse amplification in optical fiber amplifier systems.

  15. High efficiency thin-film solar cells for space applications: challenges and opportunities

    Leest, R.H. van

    2017-01-01

    In theory high efficiency thin-film III-V solar cells obtained by the epitaxial lift-off (ELO) technique offer excellent characteristics for application in space solar panels. The thesis describes several studies that investigate the space compatibility of the thin-film solar cell design developed

  16. FY 2000 report on the results of the development of technology for commercialization of the photovoltaic power system - Development of production technology of thin film solar cells. Development of production technology of application type new structure thin film solar cells (Development of production technology of high efficiency hybrid thin films/sheet solar cells); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Oyogata shinkozo hakumaku taiyodenchi no seizo gijutsu kaihatsu, (Kokoritsu hybrid gata hakumaku / sheet taiyodenchi no seizo gijutsu kaihatsu)

    NONE

    2001-03-01

    For the purpose of realizing low cost and high efficiency hybrid thin films/sheet solar cells, the R and D were carried out, and the FY 2000 results were reported. As to the formation technology of the upper cell, the following technologies were developed and the results contributory to the heightening of efficiency were obtained: technology for improvement of cell characteristics by gap widening of p layer, technology for optimization of formation conditions of i layer corresponding to the hybrid solar cell, technology for heightening of current by the intermediate ZnO layer just under the upper cell. Relating to the development of formation technology of high quality microcrystal thin films, it was indicated that the microcrystal silicon thin film had the conformity effective also for polycrystal silicon, and at the same time, the conversion efficiency of 12.8% and release voltage of 0.579V were obtained by the cell using the cast polycrystal board. In the thin film/polycrystal sheet hybrid solar cell in which all these technologies were integrated, the conversion efficiency of 12.0% was achieved, and the possibility was verified of achieving the target efficiency of 14% by further improvement of FF. (NEDO)

  17. In situ ellipsometry — A powerful tool for monitoring alkali doping of organic thin films

    Haidu, F.; Ludemann, M.; Schäfer, P.; Gordan, O.D.; Zahn, D.R.T.

    2014-01-01

    The changes of the optical properties of several organic thin films induced by potassium doping were monitored using in situ spectroscopic ellipsometry. The samples were prepared in a high vacuum chamber by organic molecular deposition. Then, potassium (K) was evaporated by passing current through K getters. The three different organic molecules used, show very distinct and different spectral behaviour upon doping. While for Tris-(8-hydroxyquinoline)-aluminium(III) and N,N′-Di-[(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine only small shifts of the spectral features were noticed, Manganese Phthalocyanine revealed significant changes of the optical properties induced by the K doping. This work indicates that the K doping process can have a dramatic effect on the electronic and the optical properties of the organic molecules, but the effect on the optical spectra remains specific for each organic molecule used, and cannot be easily predicted. - Highlights: • Monitoring organic film growth and doping with in situ spectroscopic ellipsometry • K doped organic thin films • Optical properties of organic thin films change by K doping. • The changes in the optical spectra remain specific for each organic molecule used

  18. Magnetic properties and high frequency characteristics of FeCoN thin films

    Tae-Jong Hwang

    2016-05-01

    Full Text Available (Fe65Co35N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2. A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1∼2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

  19. High power switches for ion induction linacs

    Humphries, S.; Savage, M.; Saylor, W.B.

    1985-01-01

    The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystronlike interaction with the accelerating cavities, leading to enhanced momentum spread. In this paper, we describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

  20. High power switches for ion induction linacs

    Humphries, S. Jr.; Savage, M.; Saylor, W.B.

    1985-01-01

    The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystron-like interaction with the accelerating cavities leading to enhanced momentum spread. In this paper, the author describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

  1. High power RF oscillator with Marx generators

    Murase, Hiroshi; Hayashi, Izumi

    1980-01-01

    A method to maintain RF oscillation by using many Marx generators was proposed and studied experimentally. Many charging circuits were connected to an oscillator circuit, and successive pulsed charging was made. This successive charging amplified and maintained the RF oscillation. The use of vacuum gaps and high power silicon diodes improved the characteristics of RF current cut-off of the circuit. The efficiency of the pulsed charging from Marx generators to a condenser was theoretically investigated. The theoretical result showed the maximum efficiency of 0.98. The practical efficiency obtained by using a proposed circuit with a high power oscillator was in the range 0.50 to 0.56. The obtained effective output power of the RF pulses was 11 MW. The maximum holding time of the RF pulses was about 21 microsecond. (Kato, T.)

  2. Transport ac loss in a rectangular thin strip with power-law E(J) relation

    Li, Shuo; Chen, Du-Xing; Fan, Yu; Fang, Jin

    2015-01-01

    Highlights: • Transport ac loss in a thin strip with power-law E(J) is systematically computed. • The scaled results can be accurately used for strips with any critical current and frequency. • Experiments may be unambiguously compared with modeling results at a critical frequency. - Abstract: Transport ac losses of a rectangular thin strip obeying relation E/E c =(J/J c ) n with a fixed critical current I c and n=5,10,20,30, and 40 are accurately computed at a fixed frequency f as functions of the current amplitude I m . The results may be interpolated and scaled to those at any values of I c ,f, and 5⩽n⩽40. Normalized in the same way as that in Norris’ analytical formula derived from the critical-state model and converting f to a critical frequency f c , the modeling results may be better compared with the Norris formula and experimental data. A complete set of calculated modeling data are given with necessary formulas to be easily used by experimentalists in any particular case

  3. Operation of Power Grids with High Penetration of Wind Power

    Al-Awami, Ali Taleb

    The integration of wind power into the power grid poses many challenges due to its highly uncertain nature. This dissertation involves two main components related to the operation of power grids with high penetration of wind energy: wind-thermal stochastic dispatch and wind-thermal coordinated bidding in short-term electricity markets. In the first part, a stochastic dispatch (SD) algorithm is proposed that takes into account the stochastic nature of the wind power output. The uncertainty associated with wind power output given the forecast is characterized using conditional probability density functions (CPDF). Several functions are examined to characterize wind uncertainty including Beta, Weibull, Extreme Value, Generalized Extreme Value, and Mixed Gaussian distributions. The unique characteristics of the Mixed Gaussian distribution are then utilized to facilitate the speed of convergence of the SD algorithm. A case study is carried out to evaluate the effectiveness of the proposed algorithm. Then, the SD algorithm is extended to simultaneously optimize the system operating costs and emissions. A modified multi-objective particle swarm optimization algorithm is suggested to identify the Pareto-optimal solutions defined by the two conflicting objectives. A sensitivity analysis is carried out to study the effect of changing load level and imbalance cost factors on the Pareto front. In the second part of this dissertation, coordinated trading of wind and thermal energy is proposed to mitigate risks due to those uncertainties. The problem of wind-thermal coordinated trading is formulated as a mixed-integer stochastic linear program. The objective is to obtain the optimal tradeoff bidding strategy that maximizes the total expected profits while controlling trading risks. For risk control, a weighted term of the conditional value at risk (CVaR) is included in the objective function. The CVaR aims to maximize the expected profits of the least profitable scenarios, thus

  4. Optical engineering for high power laser applications

    Novaro, M.

    1993-01-01

    Laser facilities for Inertial Confinement Fusion (I.C.F.) experiments require laser and X ray optics able to withstand short pulse conditions. After a brief recall of high power laser system arrangements and of the characteristics of their optics, the authors will present some X ray optical developments

  5. Development of a high power femtosecond laser

    Neethling, PH

    2010-10-01

    Full Text Available The Laser Research Institute and the CSIR National Laser Centre are developing a high power femtosecond laser system in a joint project with a phased approach. The laser system consists of an fs oscillator and a regenerative amplifier. An OPCPA...

  6. Targets for high power neutral beams

    Kim, J.

    1980-01-01

    Stopping high-power, long-pulse beams is fast becoming an engineering challenge, particularly in neutral beam injectors for heating magnetically confined plasmas. A brief review of neutral beam target technology is presented along with heat transfer calculations for some selected target designs

  7. Reduced filamentation in high power semiconductor lasers

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

    1999-01-01

    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

  8. Greenland Ice Sheet: High-Elevation Balance and Peripheral Thinning.

    Krabill; Abdalati; Frederick; Manizade; Martin; Sonntag; Swift; Thomas; Wright; Yungel

    2000-07-21

    Aircraft laser-altimeter surveys over northern Greenland in 1994 and 1999 have been coupled with previously reported data from southern Greenland to analyze the recent mass-balance of the Greenland Ice Sheet. Above 2000 meters elevation, the ice sheet is in balance on average but has some regions of local thickening or thinning. Thinning predominates at lower elevations, with rates exceeding 1 meter per year close to the coast. Interpolation of our results between flight lines indicates a net loss of about 51 cubic kilometers of ice per year from the entire ice sheet, sufficient to raise sea level by 0.13 millimeter per year-approximately 7% of the observed rise.

  9. Pulsed laser deposition of high Tc superconducting thin films

    Singh, R.K.; Narayan, J.

    1990-01-01

    This paper reports on the pulsed laser evaporation (PLE) technique for deposition of thin films characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa 2 Cu 3 O 7 superconducting thin films on different substrates in the temperature range of 500--650 degrees C. At temperatures below 600 degrees C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3--3.5% for films deposited on (100) SrTiO 3 and (100) LaAlO 3 substrates

  10. High Efficiency Reversible Fuel Cell Power Converter

    Pittini, Riccardo

    as well as different dc-ac and dc-dc converter topologies are presented and analyzed. A new ac-dc topology for high efficiency data center applications is proposed and an efficiency characterization based on the fuel cell stack I-V characteristic curve is presented. The second part discusses the main...... converter components. Wide bandgap power semiconductors are introduced due to their superior performance in comparison to traditional silicon power devices. The analysis presents a study based on switching loss measurements performed on Si IGBTs, SiC JFETs, SiC MOSFETs and their respective gate drivers...

  11. Thin Film Technology of High-Critical-Temperature Superconducting Electronics.

    1985-12-11

    ANALISIS OF THIN-FILM SUPERCONDUCTORS J. Talvacchio, M. A. Janocko, J. R. Gavaler, and A...in the areas of substrate preparation, niobum nitride, nlobium-tin, and molybdenum-rhenium. AN INTEGRATED DEPOSITION AND ANALISI - FACILITT The four...mobility low (64). The voids are separating 1-3 nm clusters of dense deposit. At low deposition temperatures this microstructure will persist near

  12. Analysis of Pipe Wall-thinning Caused by Water Chemistry Change in Secondary System of Nuclear Power Plant

    Yun, Hun; Hwang, Kyeongmo [KEPCO E and C, Gimcheon (Korea, Republic of); Moon, Seung-Jae [Hanyang University, Seoul (Korea, Republic of)

    2015-12-15

    Pipe wall-thinning by flow-accelerated corrosion (FAC) is a significant and costly damage of secondary system piping in nuclear power plants (NPPs). All NPPs have their management programs to ensure pipe integrity from wall-thinning. This study analyzed the pipe wall-thinning caused by changing the amine, which is used for adjusting the water chemistry in the secondary system of NPPs. The pH change was analyzed according to the addition of amine. Then, the wear rate calculated in two different amines was compared at the steam cycle in NPPs. As a result, increasing the pH at operating temperature (Hot pH) can reduce the rate of FAC damage significantly. Wall-thinning is affected by amine characteristics depending on temperature and quality of water.

  13. Design and development of high voltage high power operational ...

    address this challenge, a) Designing a discrete power opamp with high .... the use of high-impedance feedback networks, thus minimizing their output loading ... Spice simulation is done for the circuit and results are given in figures 4a–c.

  14. Voltage generators of high voltage high power accelerators

    Svinin, M.P.

    1981-01-01

    High voltage electron accelerators are widely used in modern radiation installations for industrial purposes. In the near future further increasing of their power may be effected, which enables to raise the efficiency of the radiation processes known and to master new power-consuming production in industry. Improvement of HV generators by increasing their power and efficiency is one of many scientific and engineering aspects the successful solution of which provides further development of these accelerators and their technical parameters. The subject is discussed in detail. (author)

  15. Designing High-Efficiency Thin Silicon Solar Cells Using Parabolic-Pore Photonic Crystals

    Bhattacharya, Sayak; John, Sajeev

    2018-04-01

    We demonstrate the efficacy of wave-interference-based light trapping and carrier transport in parabolic-pore photonic-crystal, thin-crystalline silicon (c -Si) solar cells to achieve above 29% power conversion efficiencies. Using a rigorous solution of Maxwell's equations through a standard finite-difference time domain scheme, we optimize the design of the vertical-parabolic-pore photonic crystal (PhC) on a 10 -μ m -thick c -Si solar cell to obtain a maximum achievable photocurrent density (MAPD) of 40.6 mA /cm2 beyond the ray-optical, Lambertian light-trapping limit. For a slanted-parabolic-pore PhC that breaks x -y symmetry, improved light trapping occurs due to better coupling into parallel-to-interface refraction modes. We achieve the optimum MAPD of 41.6 mA /cm2 for a tilt angle of 10° with respect to the vertical axis of the pores. This MAPD is further improved to 41.72 mA /cm2 by introducing a 75-nm SiO2 antireflective coating on top of the solar cell. We use this MAPD and the associated charge-carrier generation profile as input for a numerical solution of Poisson's equation coupled with semiconductor drift-diffusion equations using a Shockley-Read-Hall and Auger recombination model. Using experimentally achieved surface recombination velocities of 10 cm /s , we identify semiconductor doping profiles that yield power conversion efficiencies over 29%. Practical considerations of additional upper-contact losses suggest efficiencies close to 28%. This improvement beyond the current world record is largely due to an open-circuit voltage approaching 0.8 V enabled by reduced bulk recombination in our thin silicon architecture while maintaining a high short-circuit current through wave-interference-based light trapping.

  16. High impact data visualization with Power View, Power Map, and Power BI

    Aspin, Adam

    2014-01-01

    High Impact Data Visualization with Power View, Power Map, and Power BI helps you take business intelligence delivery to a new level that is interactive, engaging, even fun, all while driving commercial success through sound decision-making. Learn to harness the power of Microsoft's flagship, self-service business intelligence suite to deliver compelling and interactive insight with remarkable ease. Learn the essential techniques needed to enhance the look and feel of reports and dashboards so that you can seize your audience's attention and provide them with clear and accurate information. Al

  17. A High Power Linear Solid State Pulser

    Boris Yen; Brent Davis; Rex Booth

    1999-01-01

    Particle Accelerators require high voltage and often high power. Typically the high voltage/power generation utilizes a topology with an extra energy store and a switching means to extract that stored energy. The switches may be active or passive devices. Active switches are hard or soft vacuum tubes, or semiconductors. When required voltages exceed tens of kilovolts, numerous semiconductors are stacked to withstand that potential. Such topologies can use large numbers of critical parts that, when in series, compromise the system reliability and performance. This paper describes a modular, linear, solid state amplifier which uses a parallel array of semiconductors, coupled with transmission line transformers. Such a design can provide output signals with voltages exceeding 10kV (into 50-ohms), and with rise and fall times (10-90 % amplitude) that are less than 1--ns. This compact solid state amplifier is modular, and has both hot-swap and soft fail capabilities

  18. High prices on electric power now again?

    Doorman, Gerard

    2003-01-01

    Deregulation of the electric power market has yielded low prices for the consumers throughout the 1990s. Consumption has now increased considerably, but little new production has been added. This results in high prices in dry years, but to understand this one must understand price formation in the Nordic spot market. The high prices are a powerful signal to the consumers to reduce consumption, but they are also a signal to the producers to seize any opportunity to increase production. However, the construction of new dams etc. stirs up the environmentalists. Ordinary consumers may protect themselves against high prices by signing fixed-price contracts. For those who can tolerate price fluctuations, spot prices are a better alternative than the standard contract with variable price

  19. High average power linear induction accelerator development

    Bayless, J.R.; Adler, R.J.

    1987-07-01

    There is increasing interest in linear induction accelerators (LIAs) for applications including free electron lasers, high power microwave generators and other types of radiation sources. Lawrence Livermore National Laboratory has developed LIA technology in combination with magnetic pulse compression techniques to achieve very impressive performance levels. In this paper we will briefly discuss the LIA concept and describe our development program. Our goals are to improve the reliability and reduce the cost of LIA systems. An accelerator is presently under construction to demonstrate these improvements at an energy of 1.6 MeV in 2 kA, 65 ns beam pulses at an average beam power of approximately 30 kW. The unique features of this system are a low cost accelerator design and an SCR-switched, magnetically compressed, pulse power system. 4 refs., 7 figs

  20. Thin-film piezoelectric-on-silicon resonators for high-frequency reference oscillator applications.

    Abdolvand, Reza; Lavasani, Hossein M; Ho, Gavin K; Ayazi, Farrokh

    2008-12-01

    This paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators. Low-motional-impedance TPoS resonators are designed and fabricated in 2 classes--high-order and coupled-array. Devices of each class are used to assemble reference oscillators and the performance characteristics of the oscillators are measured and discussed. Since the motional impedance of these devices is small, the transimpedance amplifier (TIA) in the oscillator loop can be reduced to a single transistor and 3 resistors, a format that is very power-efficient. The lowest reported power consumption is approximately 350 microW for an oscillator operating at approximately 106 MHz. A passive temperature compensation method is also utilized by including the buried oxide layer of the silicon-on-insulator (SOI) substrate in the structural resonant body of the device, and a very small (-2.4 ppm/ degrees C) temperature coefficient of frequency is obtained for an 82-MHz oscillator.

  1. Industrial applications of high-average power high-peak power nanosecond pulse duration Nd:YAG lasers

    Harrison, Paul M.; Ellwi, Samir

    2009-02-01

    Within the vast range of laser materials processing applications, every type of successful commercial laser has been driven by a major industrial process. For high average power, high peak power, nanosecond pulse duration Nd:YAG DPSS lasers, the enabling process is high speed surface engineering. This includes applications such as thin film patterning and selective coating removal in markets such as the flat panel displays (FPD), solar and automotive industries. Applications such as these tend to require working spots that have uniform intensity distribution using specific shapes and dimensions, so a range of innovative beam delivery systems have been developed that convert the gaussian beam shape produced by the laser into a range of rectangular and/or shaped spots, as required by demands of each project. In this paper the authors will discuss the key parameters of this type of laser and examine why they are important for high speed surface engineering projects, and how they affect the underlying laser-material interaction and the removal mechanism. Several case studies will be considered in the FPD and solar markets, exploring the close link between the application, the key laser characteristics and the beam delivery system that link these together.

  2. Ultrathin Coaxial Fiber Supercapacitors Achieving High Energy and Power Densities.

    Shen, Caiwei; Xie, Yingxi; Sanghadasa, Mohan; Tang, Yong; Lu, Longsheng; Lin, Liwei

    2017-11-15

    Fiber-based supercapacitors have attracted significant interests because of their potential applications in wearable electronics. Although much progress has been made in recent years, the energy and power densities, mechanical strength, and flexibility of such devices are still in need of improvement for practical applications. Here, we demonstrate an ultrathin microcoaxial fiber supercapacitor (μCFSC) with high energy and power densities (2.7 mW h/cm 3 and 13 W/cm 3 ), as well as excellent mechanical properties. The prototype with the smallest reported overall diameter (∼13 μm) is fabricated by successive coating of functional layers onto a single micro-carbon-fiber via a scalable process. Combining the simulation results via the electrochemical model, we attribute the high performance to the well-controlled thin coatings that make full use of the electrode materials and minimize the ion transport path between electrodes. Moreover, the μCFSC features high bending flexibility and large tensile strength (more than 1 GPa), which make it promising as a building block for various flexible energy storage applications.

  3. High power beam profile monitor with optical transition radiation

    Denard, J.C.; Piot, P.; Capek, K.; Feldl, E.

    1997-01-01

    A simple monitor has been built to measure the profile of the high power beam (800 kW) delivered by the CEBAF accelerator at Jefferson Lab. The monitor uses the optical part of the forward transition radiation emitted from a thin carbon foil. The small beam size to be measured, about 100 μm, is challenging not only for the power density involved but also for the resolution the instrument must achieve. An important part of the beam instrumentation community believes the radiation being emitted into a cone of characteristic angle 1/γ is originated from a region of transverse dimension roughly λγ; thus the apparent size of the source of transition radiation would become very large for highly relativistic particles. This monitor measures 100 μm beam sizes that are much smaller than the 3.2 mm λγ limit; it confirms the statement of Rule and Fiorito that optical transition radiation can be used to image small beams at high energy. The present paper describes the instrument and its performance. The authors tested the foil in, up to 180 μA of CW beam without causing noticeable beam loss, even at 800 MeV, the lowest CEBAF energy

  4. High power gyrotrons: a close perspective

    Kartikeyan, M.V.

    2012-01-01

    Gyrotrons and their variants, popularly known as gyrodevices are millimetric wave sources provide very high powers ranging from long pulse to continuous wave (CW) for various technological, scientific and industrial applications. From their conception (monotron-version) in the late fifties until their successful development for various applications, these devices have come a long way technologically and made an irreversible impact on both users and developers. The possible applications of high power millimeter and sub-millimeter waves from gyrotrons and their variants (gyro-devices) span a wide range of technologies. The plasma physics community has already taken advantage of the recent advances of gyrotrons in the areas of RF plasma production, heating, non-inductive current drive, plasma stabilization and active plasma diagnostics for magnetic confinement thermonuclear fusion research, such as lower hybrid current drive (LHCD) (8 GHz), electron cyclotron resonance heating (ECRH) (28-170-220 GHz), electron cyclotron current drive (ECCD), collective Thomson scattering (CTS), heat-wave propagation experiments, and space-power grid (SPG) applications. Other important applications of gyrotrons are electron cyclotron resonance (ECR) discharges for the generation of multi- charged ions and soft X-rays, as well as industrial materials processing and plasma chemistry. Submillimeter wave gyrotrons are employed in high frequency, broadband electron paramagnetic resonance (EPR) spectroscopy. Additional future applications await the development of novel high power gyro-amplifiers and devices for high resolution radar ranging and imaging in atmospheric and planetary science as well as deep space and specialized satellite communications, RF drivers for next generation high gradient linear accelerators (supercolliders), high resolution Doppler radar, radar ranging and imaging in atmospheric and planetary science, drivers for next-generation high-gradient linear accelerators

  5. Visible high power fiber coupled diode lasers

    Köhler, Bernd; Drovs, Simon; Stoiber, Michael; Dürsch, Sascha; Kissel, Heiko; Könning, Tobias; Biesenbach, Jens; König, Harald; Lell, Alfred; Stojetz, Bernhard; Löffler, Andreas; Strauß, Uwe

    2018-02-01

    In this paper we report on further development of fiber coupled high-power diode lasers in the visible spectral range. New visible laser modules presented in this paper include the use of multi single emitter arrays @ 450 nm leading to a 120 W fiber coupled unit with a beam quality of 44 mm x mrad, as well as very compact modules with multi-W output power from 405 nm to 640 nm. However, as these lasers are based on single emitters, power scaling quickly leads to bulky laser units with a lot of optical components to be aligned. We also report on a new approach based on 450 nm diode laser bars, which dramatically reduces size and alignment effort. These activities were performed within the German government-funded project "BlauLas": a maximum output power of 80 W per bar has been demonstrated @ 450 nm. We show results of a 200 μm NA0.22 fiber coupled 35 W source @ 450 nm, which has been reduced in size by a factor of 25 compared to standard single emitter approach. In addition, we will present a 200 μm NA0.22 fiber coupled laser unit with an output power of 135 W.

  6. High power VCSELs for miniature optical sensors

    Geske, Jon; Wang, Chad; MacDougal, Michael; Stahl, Ron; Follman, David; Garrett, Henry; Meyrath, Todd; Snyder, Don; Golden, Eric; Wagener, Jeff; Foley, Jason

    2010-02-01

    Recent advances in Vertical-cavity Surface-emitting Laser (VCSEL) efficiency and packaging have opened up alternative applications for VCSELs that leverage their inherent advantages over light emitting diodes and edge-emitting lasers (EELs), such as low-divergence symmetric emission, wavelength stability, and inherent 2-D array fabrication. Improvements in reproducible highly efficient VCSELs have allowed VCSELs to be considered for high power and high brightness applications. In this talk, Aerius will discuss recent advances with Aerius' VCSELs and application of these VCSELs to miniature optical sensors such as rangefinders and illuminators.

  7. High-quality EuO thin films the easy way via topotactic transformation

    Mairoser, Thomas; Mundy, Julia A.; Melville, Alexander; Hodash, Daniel; Cueva, Paul; Held, Rainer; Glavic, Artur; Schubert, Jürgen; Muller, David A.; Schlom, Darrell G.; Schmehl, Andreas

    2015-07-01

    Epitaxy is widely employed to create highly oriented crystalline films. A less appreciated, but nonetheless powerful means of creating such films is via topotactic transformation, in which a chemical reaction transforms a single crystal of one phase into a single crystal of a different phase, which inherits its orientation from the original crystal. Topotactic reactions may be applied to epitactic films to substitute, add or remove ions to yield epitactic films of different phases. Here we exploit a topotactic reduction reaction to provide a non-ultra-high vacuum (UHV) means of growing highly oriented single crystalline thin films of the easily over-oxidized half-metallic semiconductor europium monoxide (EuO) with a perfection rivalling that of the best films of the same material grown by molecular-beam epitaxy or UHV pulsed-laser deposition. As the technique only requires high-vacuum deposition equipment, it has the potential to drastically improve the accessibility of high-quality single crystalline films of EuO as well as other difficult-to-synthesize compounds.

  8. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  9. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

  10. 8. High power laser and ignition facilities

    Bayramian, A.J.; Beach, R.J.; Bibeau, C.

    2002-01-01

    This document gives a review of the various high power laser projects and ignition facilities in the world: the Mercury laser system and Electra (Usa), the krypton fluoride (KrF) laser and the HALNA (high average power laser for nuclear-fusion application) project (Japan), the Shenguang series, the Xingguang facility and the TIL (technical integration line) facility (China), the Vulcan peta-watt interaction facility (UK), the Megajoule project and its feasibility phase: the LIL (laser integration line) facility (France), the Asterix IV/PALS high power laser facility (Czech Republic), and the Phelix project (Germany). In Japan the 100 TW Petawatt Module Laser, constructed in 1997, is being upgraded to the world biggest peta-watt laser. Experiments have been performed with single-pulse large aperture e-beam-pumped Garpun (Russia) and with high-current-density El-1 KrF laser installation (Russia) to investigate Al-Be foil transmittance and stability to multiple e-beam irradiations. An article is dedicated to a comparison of debris shield impacts for 2 experiments at NIF (national ignition facility). (A.C.)

  11. High Power UV LED Industrial Curing Systems

    Karlicek, Robert, F., Jr; Sargent, Robert

    2012-05-14

    UV curing is a green technology that is largely underutilized because UV radiation sources like Hg Lamps are unreliable and difficult to use. High Power UV LEDs are now efficient enough to replace Hg Lamps, and offer significantly improved performance relative to Hg Lamps. In this study, a modular, scalable high power UV LED curing system was designed and tested, performing well in industrial coating evaluations. In order to achieve mechanical form factors similar to commercial Hg Lamp systems, a new patent pending design was employed enabling high irradiance at long working distances. While high power UV LEDs are currently only available at longer UVA wavelengths, rapid progress on UVC LEDs and the development of new formulations designed specifically for use with UV LED sources will converge to drive more rapid adoption of UV curing technology. An assessment of the environmental impact of replacing Hg Lamp systems with UV LED systems was performed. Since UV curing is used in only a small portion of the industrial printing, painting and coating markets, the ease of use of UV LED systems should increase the use of UV curing technology. Even a small penetration of the significant number of industrial applications still using oven curing and drying will lead to significant reductions in energy consumption and reductions in the emission of green house gases and solvent emissions.

  12. The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination

    Kim, Hyun-Suk; Park, Kyung-Bae; Son, Kyoung Seok; Park, Joon Seok; Maeng, Wan-Joo; Kim, Tae Sang; Lee, Kwang-Hee; Kim, Eok Su; Lee, Jiyoul; Suh, Joonki; Seon, Jong-Baek; Ryu, Myung Kwan; Lee, Sang Yoon; Lee, Kimoon; Im, Seongil

    2010-01-01

    The performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied. The extent of device degradation upon negative bias stress with the presence of visible light is found to be strongly sensitive to the extent of photoelectric effect in the oxide semiconductor. Highly stable devices were fabricated by optimizing the deposition conditions of HfInZnO films, where the combination of high sputtering power and high O 2 /Ar gas flow ratio was found to result in the highest stability under bias stress experiments.

  13. High speed micromachining with high power UV laser

    Patel, Rajesh S.; Bovatsek, James M.

    2013-03-01

    Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

  14. New high power linacs and beam physics

    Wangler, T.P.; Gray, E.R.; Nath, S.; Crandall, K.R.; Hasegawa, K.

    1997-01-01

    New high-power proton linacs must be designed to control beam loss, which can lead to radioactivation of the accelerator. The threat of beam loss is increased significantly by the formation of beam halo. Numerical simulation studies have identified the space-charge interactions, especially those that occur in rms mismatched beams, as a major concern for halo growth. The maximum-amplitude predictions of the simulation codes must be subjected to independent tests to confirm the validity of the results. Consequently, the authors compare predictions from the particle-core halo models with computer simulations to test their understanding of the halo mechanisms that are incorporated in the computer codes. They present and discuss scaling laws that provide guidance for high-power linac design

  15. The high-power iodine laser

    Brederlow, G.; Fill, E.; Witte, K. J.

    The book provides a description of the present state of the art concerning the iodine laser, giving particular attention to the design and operation of pulsed high-power iodine lasers. The basic features of the laser are examined, taking into account aspects of spontaneous emission lifetime, hyperfine structure, line broadening and line shifts, stimulated emission cross sections, the influence of magnetic fields, sublevel relaxation, the photodissociation of alkyl iodides, flashlamp technology, excitation in a direct discharge, chemical excitation, and questions regarding the chemical kinetics of the photodissociation iodine laser. The principles of high-power operation are considered along with aspects of beam quality and losses, the design and layout of an iodine laser system, the scalability and prospects of the iodine laser, and the design of the single-beam Asterix III laser.

  16. Industrial Applications of High Power Ultrasonics

    Patist, Alex; Bates, Darren

    Since the change of the millennium, high-power ultrasound has become an alternative food processing technology applicable to large-scale commercial applications such as emulsification, homogenization, extraction, crystallization, dewatering, low-temperature pasteurization, degassing, defoaming, activation and inactivation of enzymes, particle size reduction, extrusion, and viscosity alteration. This new focus can be attributed to significant improvements in equipment design and efficiency during the late 1990 s. Like most innovative food processing technologies, high-power ultrasonics is not an off-the-shelf technology, and thus requires careful development and scale-up for each and every application. The objective of this chapter is to present examples of ultrasonic applications that have been successful at the commercialization stage, advantages, and limitations, as well as key learnings from scaling up an innovative food technology in general.

  17. High power, repetitive stacked Blumlein pulse generators

    Davanloo, F; Borovina, D L; Korioth, J L; Krause, R K; Collins, C B [Univ. of Texas at Dallas, Richardson, TX (United States). Center for Quantum Electronics; Agee, F J [US Air Force Phillips Lab., Kirtland AFB, NM (United States); Kingsley, L E [US Army CECOM, Ft. Monmouth, NJ (United States)

    1997-12-31

    The repetitive stacked Blumlein pulse power generators developed at the University of Texas at Dallas consist of several triaxial Blumleins stacked in series at one end. The lines are charged in parallel and synchronously commuted with a single switch at the other end. In this way, relatively low charging voltages are multiplied to give a high discharge voltage across an arbitrary load. Extensive characterization of these novel pulsers have been performed over the past few years. Results indicate that they are capable of producing high power waveforms with rise times and repetition rates in the range of 0.5-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap, or photoconductive switch. The progress in the development and use of stacked Blumlein pulse generators is reviewed. The technology and the characteristics of these novel pulsers driving flash x-ray diodes are discussed. (author). 4 figs., 5 refs.

  18. Power Supplies for High Energy Particle Accelerators

    Dey, Pranab Kumar

    2016-06-01

    The on-going research and the development projects with Large Hadron Collider at CERN, Geneva, Switzerland has generated enormous enthusiasm and interest amongst all to know about the ultimate findings on `God's Particle'. This paper has made an attempt to unfold the power supply requirements and the methodology adopted to provide the stringent demand of such high energy particle accelerators during the initial stages of the search for the ultimate particles. An attempt has also been made to highlight the present status on the requirement of power supplies in some high energy accelerators with a view that, precautionary measures can be drawn during design and development from earlier experience which will be of help for the proposed third generation synchrotron to be installed in India at a huge cost.

  19. High stability, high current DC-power supplies

    Hosono, K.; Hatanaka, K.; Itahashi, T.

    1995-01-01

    Improvements of the power supplies and the control system of the AVF cyclotron which is used as an injector to the ring cyclotron and of the transport system to the ring cyclotron were done in order to get more high quality and more stable beam. The power supply of the main coil of the AVF cyclotron was exchanged to new one. The old DCCTs (zero-flux current transformers) used for the power supplies of the trim coils of the AVF cyclotron were changed to new DCCTs to get more stability. The potentiometers used for the reference voltages in the other power supplies of the AVF cyclotron and the transport system were changed to the temperature controlled DAC method for numerical-value settings. This paper presents the results of the improvements. (author)

  20. Low Cost, Low Power, High Sensitivity Magnetometer

    2008-12-01

    which are used to measure the small magnetic signals from brain. Other types of vector magnetometers are fluxgate , coil based, and magnetoresistance...concentrator with the magnetometer currently used in Army multimodal sensor systems, the Brown fluxgate . One sees the MEMS fluxgate magnetometer is...Guedes, A.; et al., 2008: Hybrid - LOW COST, LOW POWER, HIGH SENSITIVITY MAGNETOMETER A.S. Edelstein*, James E. Burnette, Greg A. Fischer, M.G

  1. Surface processing by high power excimer laser

    Stehle, M [SOPRA, 92 - Bois-Colombes (France)

    1995-03-01

    Surface processing with lasers is a promising field of research and applications because lasers bring substantial advantages : laser beams work at distance, laser treatments are clean in respect of environment consideration and they offer innovative capabilities for surface treatment which cannot be reached by other way. Excimer lasers are pulsed, gaseous lasers which emit in UV spectral range - the most common are XeCl (308 nm), KrF (248 nm), ArF (193 nm). From 1980 up to 1994, many of them have been used for research, medical and industrial applications such as spectroscopy, PRK (photo-refractive keratotomy) and micro-machining. In the last six years, from 1987 up to 1993, efforts have been done in order to jump from 100 W average power up to 1 kW for XeCl laser at {lambda} = 308 nm. It was the aim of AMMTRA project in Japan as EU205 and EU213 Eureka projects in Europe. In this framework, SOPRA developed VEL (Very large Excimer Laser). In 1992, 1 kW (10 J x 100 Hz) millstone has been reached for the first time, this technology is based on X-Ray preionization and large laser medium (5 liters). Surface treatments based on this laser source are the main purpose of VEL Lasers. Some of them are given for instance : (a) Turbine blades made with metallic substrate and ceramic coatings on the top, are glazed in order to increase corrosion resistance of ceramic and metal sandwich. (b) Selective ablation of organic coatings deposited on fragile composite material is investigated in Aerospace industry. (c) Chock hardening of bulk metallic materials or alloys are investigated for automotive industry in order to increase wear resistance. (d) Ablation of thin surface oxides of polluted steels are under investigation in nuclear industry for decontamination. (J.P.N.).

  2. Surface processing by high power excimer laser

    Stehle, M.

    1995-01-01

    Surface processing with lasers is a promising field of research and applications because lasers bring substantial advantages : laser beams work at distance, laser treatments are clean in respect of environment consideration and they offer innovative capabilities for surface treatment which cannot be reached by other way. Excimer lasers are pulsed, gaseous lasers which emit in UV spectral range - the most common are XeCl (308 nm), KrF (248 nm), ArF (193 nm). From 1980 up to 1994, many of them have been used for research, medical and industrial applications such as spectroscopy, PRK (photo-refractive keratotomy) and micro-machining. In the last six years, from 1987 up to 1993, efforts have been done in order to jump from 100 W average power up to 1 kW for XeCl laser at λ = 308 nm. It was the aim of AMMTRA project in Japan as EU205 and EU213 Eureka projects in Europe. In this framework, SOPRA developed VEL (Very large Excimer Laser). In 1992, 1 kW (10 J x 100 Hz) millstone has been reached for the first time, this technology is based on X-Ray preionization and large laser medium (5 liters). Surface treatments based on this laser source are the main purpose of VEL Lasers. Some of them are given for instance : a) Turbine blades made with metallic substrate and ceramic coatings on the top, are glazed in order to increase corrosion resistance of ceramic and metal sandwich. b) Selective ablation of organic coatings deposited on fragile composite material is investigated in Aerospace industry. c) Chock hardening of bulk metallic materials or alloys are investigated for automotive industry in order to increase wear resistance. d) Ablation of thin surface oxides of polluted steels are under investigation in nuclear industry for decontamination. (J.P.N.)

  3. Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

    Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

    2018-04-01

    In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

  4. Gate Drive For High Speed, High Power IGBTs

    Nguyen, M.N.; Cassel, R.L.; de Lamare, J.E.; Pappas, G.C.; /SLAC

    2007-06-18

    A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3{micro}S with a rate of current rise of more than 10000A/{micro}S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.

  5. Gate Drive For High Speed, High Power IGBTs

    Nguyen, M.N.; Cassel, R.L.; de Lamare, J.E.; Pappas, G.C.; SLAC

    2007-01-01

    A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3(micro)S with a rate of current rise of more than 10000A/(micro)S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt

  6. Experimental High Speed Milling of the Selected Thin-Walled Component

    Jozef Zajac

    2017-11-01

    Full Text Available In a technical practice, it is possible to meet thin-walled parts more and more often. These parts are most commonly used in the automotive industry or aircraft industry to reduce the weight of different design part of cars or aircraft. Presented article is focused on experimental high speed milling of selected thin-walled component. The introduction of this article presents description of high speed machining and specification of thin – walled parts. The experiments were carried out using a CNC machine Pinnacle VMC 650S and C45 material - plain carbon steel for automotive components and mechanical engineering. In the last part of the article, described are the arrangements to reduction of deformation of thin-walled component during the experimental high speed milling.

  7. High temperature oxidation of thin FeCrAl strips

    Andrieu, E.; Germidis, A.; Molins, R.

    1997-01-01

    This study concerns the oxidation behaviour between 850 and 1100 C of FeCrAl thin strips. Oxidation kinetics have been continuously recorded on a thermobalance as well as discontinuously in an ''industrial'' furnace. Detailed observations of oxide layers have been performed in transmission electron microscopy on oxidized thin foil cross-sections. Oxide morphologies are correlated with kinetics: Slow kinetics and columnar α alumina grains above 950 C, fast kinetics and transition alumina platelets (γ-alumina) at 850 C and 900 C, followed by small α-alumina grains formation underneath. The weight gains in the industrial furnace displayed significant scatter and were generally greater than those measured in the thermobalance. The effect of extrinsic factors such as specimen size and shape, atmosphere, air flow conditions on the early formation of transition aluminas explains the observed differences. It appears then that in given cases parabolic constant identification from TGA recordings is difficult, or even impossible. This might contribute to explain the differences in the results presented in the literature. (orig.)

  8. High-power planar dielectric waveguide lasers

    Shepherd, D.P.; Hettrick, S.J.; Li, C.; Mackenzie, J.I.; Beach, R.J.; Mitchell, S.C.; Meissner, H.E.

    2001-01-01

    The advantages and potential hazards of using a planar waveguide as the host in a high-power diode-pumped laser system are described. The techniques discussed include the use of proximity-coupled diodes, double-clad waveguides, unstable resonators, tapers, and integrated passive Q switches. Laser devices are described based on Yb 3+ -, Nd 3+ -, and Tm 3+ -doped YAG, and monolithic and highly compact waveguide lasers with outputs greater than 10 W are demonstrated. The prospects for scaling to the 100 W level and for further integration of devices for added functionality in a monolithic laser system are discussed. (author)

  9. Scaling invariance of spherical projectile fragmentation upon high-velocity impact on a thin continuous shield

    Myagkov, N. N., E-mail: nn-myagkov@mail.ru [Russian Academy of Sciences, Institute of Applied Mechanics (Russian Federation)

    2017-01-15

    The problem of aluminum projectile fragmentation upon high-velocity impact on a thin aluminum shield is considered. A distinctive feature of this description is that the fragmentation has been numerically simulated using the complete system of equations of deformed solid mechanics by a method of smoothed particle hydrodynamics in three-dimensional setting. The transition from damage to fragmentation is analyzed and scaling relations are derived in terms of the impact velocity (V), ratio of shield thickness to projectile diameter (h/D), and ultimate strength (σ{sub p}) in the criterion of projectile and shield fracture. Analysis shows that the critical impact velocity V{sub c} (separating the damage and fragmentation regions) is a power function of σ{sub p} and h/D. In the supercritical region (V > V{sub c}), the weight-average fragment mass asymptotically tends to a power function of the impact velocity with exponent independent of h/D and σ{sub p}. Mean cumulative fragment mass distributions at the critical point are scale-invariant with respect to parameters h/D and σ{sub p}. Average masses of the largest fragments are also scale-invariant at V > V{sub c}, but only with respect to variable parameter σ{sub p}.

  10. Area and energy efficient high-performance ZnO wavy channel thin-film transistor

    Hanna, Amir

    2014-09-01

    Increased output current while maintaining low power consumption in thin-film transistors (TFTs) is essential for future generation large-area high-resolution displays. Here, we show wavy channel (WC) architecture in TFT that allows the expansion of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased performance while maintaining the real estate integrity. The experimental WCTFTs show a linear increase in output current as a function of number of fins per device resulting in (3.5×) increase in output current when compared with planar counterparts that consume the same chip area. The new architecture also allows tuning the threshold voltage as a function of the number of fin features included in the device, as threshold voltage linearly decreased from 6.8 V for planar device to 2.6 V for WC devices with 32 fins. This makes the new architecture more power efficient as lower operation voltages could be used for WC devices compared with planar counterparts. It was also found that field effect mobility linearly increases with the number of fins included in the device, showing almost \\\\(1.8×) enhancements in the field effect mobility than that of the planar counterparts. This can be attributed to higher electric field in the channel due to the fin architecture and threshold voltage shift. © 2014 IEEE.

  11. Reserve, thin form-factor, hypochlorite-based cells for powering portable systems: Manufacture (including MEMS processes), performance and characterization

    Cardenas-Valencia, Andres M.; Langebrake, Larry [Center for Ocean Technology, University of South Florida, 140 Seventh Ave. S., St. Petersburg, FL (United States); Biver, Carl J. [Center for Ocean Technology, University of South Florida, 140 Seventh Ave. S., St. Petersburg, FL (United States); Department of Chemical Engineering, University of South Florida, 4202 E. Fowler Ave. Tampa, FL (United States)

    2007-03-30

    This work focuses on fabrication routes and performance evaluation of thin form-factors, reserve cells, as a powering alternative for expendable and/or remotely operated systems. The catalytic decomposition of sodium hypochlorite solutions is revisited herein with two cost-effective anodes: zinc and aluminum. Aluminum, even though the most expensive of the utilized anodes, constituted cells with double the energy content (up to 55 Wh kg{sup -1}) than those fabricated with zinc. Even though the hypochlorite concentration in the solution limits the cells' operational life, attractive performances (1.0 V with a current of 10 mA) for the manufactured cells are obtained. It is shown that micro fabrication processes, allowing for close electrodes interspacing, provided high faradic and columbic efficiencies of up to 70 and 100%, respectively. Obtained specific energies (50-120 Wh kg{sup -1}) are in the same order of magnitude than batteries currently used for powering deployable systems. Experimental results show that a simple model that linearly relates over potentials and the electrical load, adequately describe all the cell designs. A mathematical model based on a kinetic-mechanistic scheme that relates the current output as a function of time agrees fairly well with results obtained activating cells with various concentrations of NaOCl solutions. (author)

  12. High Energy Density Sciences with High Power Lasers at SACLA

    Kodama, Ryosuke

    2013-10-01

    One of the interesting topics on high energy density sciences with high power lasers is creation of extremely high pressures in material. The pressures of more than 0.1 TPa are the energy density corresponding to the chemical bonding energy, resulting in expectation of dramatic changes in the chemical reactions. At pressures of more than TPa, most of material would be melted on the shock Hugoniot curve. However, if the temperature is less than 1eV or lower than a melting point at pressures of more than TPa, novel solid states of matter must be created through a pressured phase transition. One of the interesting materials must be carbon. At pressures of more than TPa, the diamond structure changes to BC and cubic at more than 3TPa. To create such novel states of matter, several kinds of isentropic-like compression techniques are being developed with high power lasers. To explore the ``Tera-Pascal Science,'' now we have a new tool which is an x-ray free electron laser as well as high power lasers. The XFEL will clear the details of the HED states and also efficiently create hot dense matter. We have started a new project on high energy density sciences using an XFEL (SACLA) in Japan, which is a HERMES (High Energy density Revolution of Matter in Extreme States) project.

  13. High-power LEDs for plant cultivation

    Tamulaitis, Gintautas; Duchovskis, Pavelas; Bliznikas, Zenius; Breive, Kestutis; Ulinskaite, Raimonda; Brazaityte, Ausra; Novickovas, Algirdas; Zukauskas, Arturas; Shur, Michael S.

    2004-10-01

    We report on high-power solid-state lighting facility for cultivation of greenhouse vegetables and on the results of the study of control of photosynthetic activity and growth morphology of radish and lettuce imposed by variation of the spectral composition of illumination. Experimental lighting modules (useful area of 0.22 m2) were designed based on 4 types of high-power light-emitting diodes (LEDs) with emission peaked in red at the wavelengths of 660 nm and 640 nm (predominantly absorbed by chlorophyll a and b for photosynthesis, respectively), in blue at 455 nm (phototropic function), and in far-red at 735 nm (important for photomorphology). Morphological characteristics, chlorophyll and phytohormone concentrations in radish and lettuce grown in phytotron chambers under lighting with different spectral composition of the LED-based illuminator and under illumination by high pressure sodium lamps with an equivalent photosynthetic photon flux density were compared. A well-balanced solid-state lighting was found to enhance production of green mass and to ensure healthy morphogenesis of plants compared to those grown using conventional lighting. We observed that the plant morphology and concentrations of morphologically active phytohormones is strongly affected by the spectral composition of light in the red region. Commercial application of the LED-based illumination for large-scale plant cultivation is discussed. This technology is favorable from the point of view of energy consumption, controllable growth, and food safety but is hindered by high cost of the LEDs. Large scale manufacturing of high-power red AlInGaP-based LEDs emitting at 650 nm and a further decrease of the photon price for the LEDs emitting in the vicinity of the absorption peak of chlorophylls have to be achieved to promote horticulture applications.

  14. High-temperature fabrication of Ag(In,Ga)Se{sub 2} thin films for applications in solar cells

    Zhang, Xianfeng [International Center for Science and Engineering Programs, Waseda University, Tokyo (Japan); Yamada, Akira [Department of Physical Electronics, Tokyo Institute of Technology, Tokyo (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo (Japan); Kagami Memorial Research Institute for Materials Science, Waseda University, Tokyo (Japan)

    2017-10-15

    Molecular beam epitaxy was used to fabricate Ag(In,Ga)Se{sub 2} (AIGS) thin films. To improve the diffusion of Ag, high-temperature deposition and high-temperature annealing methods were applied to fabricate AIGS films. The as-grown AIGS thin films were then used to make AIGS solar cells. We found that grain size and crystallinity of AIGS films were considerably improved by increasing the deposition and annealing temperature. For high-temperature deposition, temperatures over 600 C led to decomposition of the AIGS film, desorption of In, and deterioration of its crystallinity. The most appropriate deposition temperature was 590 C and a solar cell with a power conversion efficiency of 4.1% was obtained. High-temperature annealing of the AIGS thin films showed improved crystallinity as annealing temperature was increased and film decomposition and In desorption were prevented. A solar cell based on this film showed the highest conversion efficiency of 6.4% when annealed at 600 C. When the annealing temperature was further increased to 610 C, the performance of the cell deteriorated due to loss of the out-of-plane Ga gradient. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Industrial Applications of High Average Power FELS

    Shinn, Michelle D

    2005-01-01

    The use of lasers for material processing continues to expand, and the annual sales of such lasers exceeds $1 B (US). Large scale (many m2) processing of materials require the economical production of laser powers of the tens of kilowatts, and therefore are not yet commercial processes, although they have been demonstrated. The development of FELs based on superconducting RF (SRF) linac technology provides a scaleable path to laser outputs above 50 kW in the IR, rendering these applications economically viable, since the cost/photon drops as the output power increases. This approach also enables high average power ~ 1 kW output in the UV spectrum. Such FELs will provide quasi-cw (PRFs in the tens of MHz), of ultrafast (pulsewidth ~ 1 ps) output with very high beam quality. This talk will provide an overview of applications tests by our facility's users such as pulsed laser deposition, laser ablation, and laser surface modification, as well as present plans that will be tested with our upgraded FELs. These upg...

  16. III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

    Huang, Cheng-Ying

    As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing

  17. Industrial application of high power disk lasers

    Brockmann, Rüdiger; Havrilla, David

    2008-02-01

    Laser welding has become one of the fastest growing areas for industrial laser applications. The increasing cost effectiveness of the laser process is enabled by the development of new highly efficient laser sources, such as the Disk laser, coupled with decreasing cost per Watt. TRUMPF introduced the Disk laser several years ago, and today it has become the most reliable laser tool on the market. The excellent beam quality and output powers of up to 10 kW enable its application in the automotive industry as well as in the range of thick plate welding, such as heavy construction and ship building. This serves as an overview of the most recent developments on the TRUMPF Disk laser and its industrial applications like cutting, welding, remote welding and hybrid welding, too. The future prospects regarding increased power and even further improved productivity and economics are presented.

  18. A novel high performance, ultra thin heat sink for electronics

    Escher, W.; Michel, B.; Poulikakos, D.

    2010-01-01

    We present an ultra thin heat sink for electronics, combining optimized impinging slot-jets, micro-channels and manifolds for efficient cooling. We first introduce a three-dimensional numerical model of the heat transfer structure, to investigate its hydrodynamic and thermal performance and its sensitivity to geometric parameters. In a second step we propose a three-dimensional hydrodynamic numerical model representing the complete system. Based on this model we design a novel manifold providing uniform fluid distribution. In order to save computational time a simpler semi-empirical model is proposed and validated. The semi-empirical model allows a robust optimization of the heat sink geometric parameters. The design is optimized for a 2 x 2 cm 2 chip and provides a total thermal resistance of 0.087 cm 2 K/W for flow rates 2 for a temperature difference between fluid inlet and chip of 65 K.

  19. High-field, high-density tokamak power reactor

    Cohn, D.R.; Cook, D.L.; Hay, R.D.; Kaplan, D.; Kreischer, K.; Lidskii, L.M.; Stephany, W.; Williams, J.E.C.; Jassby, D.L.; Okabayashi, M.

    1977-11-01

    A conceptual design of a compact (R 0 = 6.0 m) high power density (average P/sub f/ = 7.7 MW/m 3 ) tokamak demonstration power reactor has been developed. High magnetic field (B/sub t/ = 7.4 T) and moderate elongation (b/a = 1.6) permit operation at the high density (n(0) approximately 5 x 10 14 cm -3 ) needed for ignition in a relatively small plasma, with a spatially-averaged toroidal beta of only 4%. A unique design for the Nb 3 Sn toroidal-field magnet system reduces the stress in the high-field trunk region, and allows modularization for simpler disassembly. The modest value of toroidal beta permits a simple, modularized plasma-shaping coil system, located inside the TF coil trunk. Heating of the dense central plasma is attained by the use of ripple-assisted injection of 120-keV D 0 beams. The ripple-coil system also affords dynamic control of the plasma temperature during the burn period. A FLIBE-lithium blanket is designed especially for high-power-density operation in a high-field environment, and gives an overall tritium breeding ratio of 1.05 in the slowly pumped lithium

  20. The JLab high power ERL light source

    Neil, G.R.; Behre, C.; Benson, S.V.

    2006-01-01

    A new THz/IR/UV photon source at Jefferson Lab is the first of a new generation of light sources based on an Energy-Recovered (superconducting) Linac (ERL). The machine has a 160MeV electron beam and an average current of 10mA in 75MHz repetition rate hundred femtosecond bunches. These electron bunches pass through a magnetic chicane and therefore emit synchrotron radiation. For wavelengths longer than the electron bunch the electrons radiate coherently a broadband THz ∼ half cycle pulse whose average brightness is >5 orders of magnitude higher than synchrotron IR sources. Previous measurements showed 20W of average power extracted [Carr, et al., Nature 420 (2002) 153]. The new facility offers simultaneous synchrotron light from the visible through the FIR along with broadband THz production of 100fs pulses with >200W of average power. The FELs also provide record-breaking laser power [Neil, et al., Phys. Rev. Lett. 84 (2000) 662]: up to 10kW of average power in the IR from 1 to 14μm in 400fs pulses at up to 74.85MHz repetition rates and soon will produce similar pulses of 300-1000nm light at up to 3kW of average power from the UV FEL. These ultrashort pulses are ideal for maximizing the interaction with material surfaces. The optical beams are Gaussian with nearly perfect beam quality. See www.jlab.org/FEL for details of the operating characteristics; a wide variety of pulse train configurations are feasible from 10ms long at high repetition rates to continuous operation. The THz and IR system has been commissioned. The UV system is to follow in 2005. The light is transported to user laboratories for basic and applied research. Additional lasers synchronized to the FEL are also available. Past activities have included production of carbon nanotubes, studies of vibrational relaxation of interstitial hydrogen in silicon, pulsed laser deposition and ablation, nitriding of metals, and energy flow in proteins. This paper will present the status of the system and

  1. The JLab high power ERL light source

    G.R. Neil; C. Behre; S.V. Benson; M. Bevins; G. Biallas; J. Boyce; J. Coleman; L.A. Dillon-Townes; D. Douglas; H.F. Dylla; R. Evans; A. Grippo; D. Gruber; J. Gubeli; D. Hardy; C. Hernandez-Garcia; K. Jordan; M.J. Kelley; L. Merminga; J. Mammosser; W. Moore; N. Nishimori; E. Pozdeyev; J. Preble; R. Rimmer; Michelle D. Shinn; T. Siggins; C. Tennant; R. Walker; G.P. Williams and S. Zhang

    2005-03-19

    A new THz/IR/UV photon source at Jefferson Lab is the first of a new generation of light sources based on an Energy-Recovered, (superconducting) Linac (ERL). The machine has a 160 MeV electron beam and an average current of 10 mA in 75 MHz repetition rate hundred femtosecond bunches. These electron bunches pass through a magnetic chicane and therefore emit synchrotron radiation. For wavelengths longer than the electron bunch the electrons radiate coherently a broadband THz {approx} half cycle pulse whose average brightness is > 5 orders of magnitude higher than synchrotron IR sources. Previous measurements showed 20 W of average power extracted[1]. The new facility offers simultaneous synchrotron light from the visible through the FIR along with broadband THz production of 100 fs pulses with >200 W of average power. The FELs also provide record-breaking laser power [2]: up to 10 kW of average power in the IR from 1 to 14 microns in 400 fs pulses at up to 74.85 MHz repetition rates and soon will produce similar pulses of 300-1000 nm light at up to 3 kW of average power from the UV FEL. These ultrashort pulses are ideal for maximizing the interaction with material surfaces. The optical beams are Gaussian with nearly perfect beam quality. See www.jlab.org/FEL for details of the operating characteristics; a wide variety of pulse train configurations are feasible from 10 microseconds long at high repetition rates to continuous operation. The THz and IR system has been commissioned. The UV system is to follow in 2005. The light is transported to user laboratories for basic and applied research. Additional lasers synchronized to the FEL are also available. Past activities have included production of carbon nanotubes, studies of vibrational relaxation of interstitial hydrogen in silicon, pulsed laser deposition and ablation, nitriding of metals, and energy flow in proteins. This paper will present the status of the system and discuss some of the discoveries we have made

  2. Vacuum-integrated electrospray deposition for highly reliable polymer thin film.

    Park, Soohyung; Lee, Younjoo; Yi, Yeonjin

    2012-10-01

    Vacuum electrospray deposition (ESD) equipment was designed to prepare polymer thin films. The polymer solution can be injected directly into vacuum system through multi-stage pumping line, so that the solvent residues and ambient contaminants are highly reduced. To test the performance of ESD system, we fabricated organic photovoltaic cells (OPVCs) by injecting polymer solution directly onto the substrate inside a high vacuum chamber. The OPVC fabricated has the structure of Al∕P3HT:PCBM∕PEDOT:PSS∕ITO and was optimized by varying the speed of solution injection and concentration of the solution. The power conversion efficiency (PCE) of the optimized OPVC is 3.14% under AM 1.5G irradiation without any buffer layer at the cathode side. To test the advantages of the vacuum ESD, we exposed the device to atmosphere between the deposition steps of the active layer and cathode. This showed that the PCE of the vacuum processed device is 24% higher than that of the air exposed device and confirms the advantages of the vacuum prepared polymer film for high performance devices.

  3. Thin-target excitation functions: a powerful tool for optimizing yield, radionuclidic purity and specific activity of cyclotron produced radionuclides

    Bonardi, M.L.

    2002-01-01

    loci of the maxima of Y(E,ΔE) curves are present in most cases. As a relevant conclusion, use of target thickness larger than the 'effective' value, is unsuitable from technological point of view, due to larger power density deposited by the beam in target material itself, instead of target cooling system. Finally, this set of Thick-Target Yields and maxima permits calculating the optimum irradiation conditions to produce radionuclides with higher as possible yield, radionuclidic purity and specific activity. In order to join the advantages of the accurate knowledge of thin-target excitation functions and cross-sections of radionuclide of interest and its radioisotopic impurities, very selective radiochemical separations were optimized to separate the radionuclide itself from the irradiated target without any addition of isotopic carrier. A large number of very high specific activity radionuclides for environmental, toxicological and biomedical research applications have been produced in No Carrier Added form, by medium energy proton, deuteron and alpha accelerating cyclotrons. Some practical examples of radionuclides produced recently are presented. (author)

  4. Influence of Basalt FRP Mesh Reinforcement on High-Performance Concrete Thin Plates at High Temperatures

    Hulin, Thomas; Lauridsen, Dan H.; Hodicky, Kamil

    2015-01-01

    A basalt fiber–reinforced polymer (BFRP) mesh was introduced as reinforcement in high-performance concrete (HPC) thin plates (20–30 mm) for implementation in precast sandwich panels. An experimental program studied the BFRP mesh influence on HPC exposed to high temperature. A set of standard...... furnace tests compared performances of HPC with and without BFRP mesh, assessing material behavior; another set including polypropylene (PP) fibers to avoid spalling compared the performance of BFRP mesh reinforcement to that of regular steel reinforcement, assessing mechanical properties......, requiring the use of steel. Microscope observations highlighted degradation of the HPC-BFRP mesh interface with temperature due to the melting polymer matrix of the mesh. These observations call for caution when using fiber-reinforced polymer (FRP) reinforcement in elements exposed to fire hazard....

  5. Fiber facet gratings for high power fiber lasers

    Vanek, Martin; Vanis, Jan; Baravets, Yauhen; Todorov, Filip; Ctyroky, Jiri; Honzatko, Pavel

    2017-12-01

    We numerically investigated the properties of diffraction gratings designated for fabrication on the facet of an optical fiber. The gratings are intended to be used in high-power fiber lasers as mirrors either with a low or high reflectivity. The modal reflectance of low reflectivity polarizing grating has a value close to 3% for TE mode while it is significantly suppressed for TM mode. Such a grating can be fabricated on laser output fiber facet. The polarizing grating with high modal reflectance is designed as a leaky-mode resonant diffraction grating. The grating can be etched in a thin layer of high index dielectric which is sputtered on fiber facet. We used refractive index of Ta2O5 for such a layer. We found that modal reflectance can be close to 0.95 for TE polarization and polarization extinction ratio achieves 18 dB. Rigorous coupled wave analysis was used for fast optimization of grating parameters while aperiodic rigorous coupled wave analysis, Fourier modal method and finite difference time domain method were compared and used to compute modal reflectance of designed gratings.

  6. Impact of the difference in power frequency on diamond-like carbon thin film coating over 3-dimensional objects

    Nakaya, Masaki, E-mail: m-nakaya@kirin.co.jp [Packaging Technology Development Center, Technology Development Department, Kirin Brewery Co., Ltd., 1-17-1 Namamugi, Tsurumi-ku, Yokohama, Kanagawa 230-8682 (Japan); Shimizu, Mari [Packaging Technology Development Center, Technology Development Department, Kirin Brewery Co., Ltd., 1-17-1 Namamugi, Tsurumi-ku, Yokohama, Kanagawa 230-8682 (Japan); Uedono, Akira [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-08-01

    With a type of capacitatively coupled plasma enhanced chemical vapor deposition (PECVD) technique, where two specially designed electrodes face to each other, the inner surface of hollow 3-dimensional objects such as poly(ethylene terephthalate) (PET) bottles can be coated with diamond-like carbon (DLC) thin film. DLC-coated PET bottles obtained with this technique have an enhanced gas barrier property, and therefore are applicable to industrial use such as for the extension of the shelf-life of contents sensitive to gas permeation. In this paper, the impact of power frequency ranging from 2.5 to 13.56 MHz was studied in order to research the behavior of plasma inside PET bottles and resultant properties. Different power frequency turned out to be influential on gas barrier property, the overall and distribution of tint, and adhesion between DLC and PET substrate. In addition, positron annihilation turned out to be powerful tool for the comparison of different coating conditions because it clarifies the homogeneity of DLC thin films through providing information on overall structure and thickness of them. These findings can be used for the optimization not only in the beverage PET bottle application, but also in other capacitatively coupled PECVD devices. - Highlights: • We demonstrated an effective methodology for the homogeneity of thin films. • We described the influence of power frequency on plasma and resultant thin film. • Diamond-like carbon coated on poly(ethylene terephthalate) bottles was used. • Different frequency provided homogenous thin films based on the above methodology. • For the industrial performance of the bottles, optimization was found at 6 MHz.

  7. Impact of the difference in power frequency on diamond-like carbon thin film coating over 3-dimensional objects

    Nakaya, Masaki; Shimizu, Mari; Uedono, Akira

    2014-01-01

    With a type of capacitatively coupled plasma enhanced chemical vapor deposition (PECVD) technique, where two specially designed electrodes face to each other, the inner surface of hollow 3-dimensional objects such as poly(ethylene terephthalate) (PET) bottles can be coated with diamond-like carbon (DLC) thin film. DLC-coated PET bottles obtained with this technique have an enhanced gas barrier property, and therefore are applicable to industrial use such as for the extension of the shelf-life of contents sensitive to gas permeation. In this paper, the impact of power frequency ranging from 2.5 to 13.56 MHz was studied in order to research the behavior of plasma inside PET bottles and resultant properties. Different power frequency turned out to be influential on gas barrier property, the overall and distribution of tint, and adhesion between DLC and PET substrate. In addition, positron annihilation turned out to be powerful tool for the comparison of different coating conditions because it clarifies the homogeneity of DLC thin films through providing information on overall structure and thickness of them. These findings can be used for the optimization not only in the beverage PET bottle application, but also in other capacitatively coupled PECVD devices. - Highlights: • We demonstrated an effective methodology for the homogeneity of thin films. • We described the influence of power frequency on plasma and resultant thin film. • Diamond-like carbon coated on poly(ethylene terephthalate) bottles was used. • Different frequency provided homogenous thin films based on the above methodology. • For the industrial performance of the bottles, optimization was found at 6 MHz

  8. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited -ZnO Thin Films and Applications in p-i-n -Si:H Thin-Film Solar Cells

    Fang-Hsing Wang

    2013-01-01

    Full Text Available A compound of ZnO with 3 wt% Ga2O3 (ZnO : Ga2O3 = 97 : 3 in wt%, GZO was sintered at C as a target. The GZO thin films were deposited on glass using a radio frequency magnetron sputtering system at C by changing the deposition power from 50 W to 150 W. The effects of deposition power on the crystallization size, lattice constant (c, resistivity, carrier concentration, carrier mobility, and optical transmission rate of the GZO thin films were studied. The blue shift in the transmission spectrum of the GZO thin films was found to change with the variations of the carrier concentration because of the Burstein-Moss shifting effect. The variations in the optical band gap ( value of the GZO thin films were evaluated from the plots of , revealing that the measured value decreased with increasing deposition power. As compared with the results deposited at room temperature by Gong et al., (2010 the C deposited GZO thin films had apparent blue shift in the transmission spectrum and larger value. For the deposited GZO thin films, both the carrier concentration and mobility linearly decreased and the resistivity linearly increased with increasing deposition power. The prepared GZO thin films were also used as transparent electrodes to fabricate the amorphous silicon thin-film solar cells, and their properties were also measured.

  9. Application of high power microwave vacuum electron devices

    Ding Yaogen; Liu Pukun; Zhang Zhaochuan; Wang Yong; Shen Bin

    2011-01-01

    High power microwave vacuum electron devices can work at high frequency, high peak and average power. They have been widely used in military and civil microwave electron systems, such as radar, communication,countermeasure, TV broadcast, particle accelerators, plasma heating devices of fusion, microwave sensing and microwave heating. In scientific research, high power microwave vacuum electron devices are used mainly on high energy particle accelerator and fusion research. The devices include high peak power klystron, CW and long pulse high power klystron, multi-beam klystron,and high power gyrotron. In national economy, high power microwave vacuum electron devices are used mainly on weather and navigation radar, medical and radiation accelerator, TV broadcast and communication system. The devices include high power pulse and CW klystron, extended interaction klystron, traveling wave tube (TWT), magnetron and induced output tube (IOT). The state of art, common technology problems and trends of high power microwave vacuum electron devices are introduced in this paper. (authors)

  10. Novel miniature high power ring filter

    Huang Huifen; Mao Junfa; Luo Zhihua

    2005-01-01

    The power handling capability of high temperature superconducting (HTS) filters is limited due to current concentration at the edges of the superconducting films. This problem can be overcome by using ring resonator, which employs the edge current free and reduces the current concentration. However, this kind of filter has large size. In order to reduce the cost and size and increase the power handling capability, in this paper a HTS photonic bandgap (PBG) structure filter is developed. The proposed pass band filter with PBG structure exhibits center frequency 12.23 GHz, steepness (about 35 dB/GHz), bandwidth (-3 dB bandwidth is 0.045 GHz), and low insertion loss (about -0.5 dB), and can handle input power up to 1 W (this value was limited by the measurement instrument used in the experiment). The size is reduced by 25%, insertion loss reduced by 37.5%, and steeper roll-off of the filter is also obtained compared with that in published literature

  11. High-power converters and AC drives

    Wu, Bin

    2017-01-01

    This new edition reflects the recent technological advancements in the MV drive industry, such as advanced multilevel converters and drive configurations. It includes three new chapters, Control of Synchronous Motor Drives, Transformerless MV Drives, and Matrix Converter Fed Drives. In addition, there are extensively revised chapters on Multilevel Voltage Source Inverters and Voltage Source Inverter-Fed Drives. This book includes a systematic analysis on a variety of high-power multilevel converters, illustrates important concepts with simulations and experiments, introduces various megawatt drives produced by world leading drive manufacturers, and addresses practical problems and their mitigations methods.

  12. Compulsator, a high power compensated pulsed alternator

    Weldon, W.F.; Bird, W.L.; Driga, M.D.; Rylander, H.G.; Tolk, K.M.; Woodson, H.H.

    1983-01-01

    This chapter describes a pulsed power supply utilizing inertial energy storage as a possible replacement for large capacitor banks. The compulsator overcomes many of the limitations of the pulsed homopolar generators previously developed by the Center for Electromechanics and elsewhere in that it offers high voltage (10's of kV) and consequently higher pulse rise times, is self commutating, and offers the possibility of generating repetitive pulses. The compulsator converts rotational inertial energy directly into electrical energy utilizing the principles of both magnetic induction and flux compression. The theory of operation, a prototype compulsator design, and advanced compulsator designs are discussed

  13. Cost optimisation studies of high power accelerators

    McAdams, R.; Nightingale, M.P.S.; Godden, D. [AEA Technology, Oxon (United Kingdom)] [and others

    1995-10-01

    Cost optimisation studies are carried out for an accelerator based neutron source consisting of a series of linear accelerators. The characteristics of the lowest cost design for a given beam current and energy machine such as power and length are found to depend on the lifetime envisaged for it. For a fixed neutron yield it is preferable to have a low current, high energy machine. The benefits of superconducting technology are also investigated. A Separated Orbit Cyclotron (SOC) has the potential to reduce capital and operating costs and intial estimates for the transverse and longitudinal current limits of such machines are made.

  14. High index glass thin film processing for photonics and photovoltaic (PV) applications

    Ogbuu, Okechukwu Anthony

    To favorably compete with fossil-fuel technology, the greatest challenge for thin film solar-cells is to improve efficiency and reduce material cost. Thickness scaling to thin film reduces material cost but affects the light absorption in the cells; therefore a concept that traps incident photons and increases its optical path length is needed to boost absorption in thin film solar cells. One approach is the integration of low symmetric gratings (LSG), using high index material, on either the front-side or backside of 30 um thin c-Si cells. In this study, Multicomponent TeO2--Bi2O 3--ZnO (TBZ) glass thin films were prepared using RF magnetron sputtering under different oxygen flow rates. The influences of oxygen flow rate on the structural and optical properties of the resulting thin films were investigated. The structural origin of the optical property variation was studied using X-ray diffraction, X-ray photoelectron spectroscopy, Raman Spectroscopy, and transmission electron microscopy. The results indicate that TBZ glass thin film is a suitable material for front side LSG material photovoltaic and photonics applications due to their amorphous nature, high refractive index (n > 2), broad band optical transparency window, low processing temperature. We developed a simple maskless method to pattern sputtered tellurite based glass thin films using unconventional agarose hydrogel mediated wet etching. Conventional wet etching process, while claiming low cost and high throughput, suffers from reproducibility and pattern fidelity issues due to the isotropic nature of wet chemical etching when applied to glasses and polymers. This method overcomes these challenges by using an agarose hydrogel stamp to mediate a conformal etching process. In our maskless method, agarose hydrogel stamps are patterned following a standard soft lithography and replica molding process from micropatterned masters and soaked in a chemical etchant. The micro-scale features on the stamp are

  15. Titanium dioxide thin films for high temperature gas sensors

    Seeley, Zachary Mark; Bandyopadhyay, Amit; Bose, Susmita, E-mail: sbose@wsu.ed

    2010-10-29

    Titanium dioxide (TiO{sub 2}) thin film gas sensors were fabricated via the sol-gel method from a starting solution of titanium isopropoxide dissolved in methoxyethanol. Spin coating was used to deposit the sol on electroded aluminum oxide (Al{sub 2}O{sub 3}) substrates forming a film 1 {mu}m thick. The influence of crystallization temperature and operating temperature on crystalline phase, grain size, electronic conduction activation energy, and gas sensing response toward carbon monoxide (CO) and methane (CH{sub 4}) was studied. Pure anatase phase was found with crystallization temperatures up to 800 {sup o}C, however, rutile began to form by 900 {sup o}C. Grain size increased with increasing calcination temperature. Activation energy was dependent on crystallite size and phase. Sensing response toward CO and CH{sub 4} was dependent on both calcination and operating temperatures. Films crystallized at 650 {sup o}C and operated at 450 {sup o}C showed the best selectivity toward CO.

  16. Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

    Pei-Chung Lin

    2016-08-01

    Full Text Available Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 °C are saturation magnetization 9.13 × 105 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 103 A/m, and electrical resistivity 3.75 μΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

  17. The use of thin-section high-resolution CT in pediatric pulmonary disease

    Hay, T.C.; Horgan, J.G.; Rumack, C.M.

    1989-01-01

    High-resolution thin-section CT of the chest was used successfully to characterize the extent of pulmonary disease. This paper reports on a study in which ten children with chronic lung disorders (including cystic fibrosis, reactive airway disease, and idiopathic disease) were evaluated to test the accuracy of the posteroanterior and lateral chest CT, with both thick (1 cm) and thin (1-3 mm) sections. Unsuspected bronchiectasis was established n two patients with reactive airway disease, and the extent of bronchiectasis in other patients was best defined on thin-section CT. Technique was crucial for an accurate study, and magnification views of each lung were useful. Thin-section CT of the chest was helpful in defining and localizing the extent of these pulmonary disorders

  18. Potential for efficient frequency conversion at high average power using solid state nonlinear optical materials

    Eimerl, D.

    1985-01-01

    High-average-power frequency conversion using solid state nonlinear materials is discussed. Recent laboratory experience and new developments in design concepts show that current technology, a few tens of watts, may be extended by several orders of magnitude. For example, using KD*P, efficient doubling (>70%) of Nd:YAG at average powers approaching 100 KW is possible; and for doubling to the blue or ultraviolet regions, the average power may approach 1 MW. Configurations using segmented apertures permit essentially unlimited scaling of average power. High average power is achieved by configuring the nonlinear material as a set of thin plates with a large ratio of surface area to volume and by cooling the exposed surfaces with a flowing gas. The design and material fabrication of such a harmonic generator are well within current technology

  19. Influence of the radio-frequency power on the physical and optical properties of plasma polymerized cyclohexane thin films

    Manaa, C., E-mail: chadlia.el.manaa@gmail.com [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, UFR des Sciences d' Amiens, 33 rue Saint Leu, 80039 Amiens CEDEX 2 (France); Laboratoire des Matériaux Avancés et Phénomènes Quantiques, Université de Tunis El-Manar, Faculté des Sciences de Tunis, Campus universitaire El-Manar, 1068 Tunis (Tunisia); Lejeune, M. [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, UFR des Sciences d' Amiens, 33 rue Saint Leu, 80039 Amiens CEDEX 2 (France); Kouki, F. [Laboratoire des Matériaux Avancés et Phénomènes Quantiques, Université de Tunis El-Manar, Faculté des Sciences de Tunis, Campus universitaire El-Manar, 1068 Tunis (Tunisia); Durand-Drouhin, O. [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, UFR des Sciences d' Amiens, 33 rue Saint Leu, 80039 Amiens CEDEX 2 (France); Bouchriha, H. [Laboratoire des Matériaux Avancés et Phénomènes Quantiques, Université de Tunis El-Manar, Faculté des Sciences de Tunis, Campus universitaire El-Manar, 1068 Tunis (Tunisia); and others

    2014-06-02

    We investigate in the present study the effects of the radio-frequency plasma power on the opto-electronical properties of the polymeric amorphous hydrogenated carbon thin films deposited at room temperature and different radio-frequency powers by plasma-enhanced chemical vapor deposition method using cyclohexane as precursor. A combination of U.V.–Visible and infrared transmission measurements is applied to characterize the bonding and electronic properties of these films. Some film properties namely surface roughness, contact angle, surface energy, and optical properties are found to be significantly influenced by the radio-frequency power. The changes in these properties are analyzed within the microstructural modifications occurring during growth. - Highlights: • Effects of the radio-frequency power on the optoelectronic properties of thin films • Elaboration of plasma polymerized thin films using cyclohexane as precursor gas • The use of U.V.–Visible-infrared transmission, and optical gap • Study of the surface topography of the films by using Atomic Force microscopy • The use of a capacitively coupled plasma enhanced chemical vapor deposition method.

  20. Influence of the radio-frequency power on the physical and optical properties of plasma polymerized cyclohexane thin films

    Manaa, C.; Lejeune, M.; Kouki, F.; Durand-Drouhin, O.; Bouchriha, H.

    2014-01-01

    We investigate in the present study the effects of the radio-frequency plasma power on the opto-electronical properties of the polymeric amorphous hydrogenated carbon thin films deposited at room temperature and different radio-frequency powers by plasma-enhanced chemical vapor deposition method using cyclohexane as precursor. A combination of U.V.–Visible and infrared transmission measurements is applied to characterize the bonding and electronic properties of these films. Some film properties namely surface roughness, contact angle, surface energy, and optical properties are found to be significantly influenced by the radio-frequency power. The changes in these properties are analyzed within the microstructural modifications occurring during growth. - Highlights: • Effects of the radio-frequency power on the optoelectronic properties of thin films • Elaboration of plasma polymerized thin films using cyclohexane as precursor gas • The use of U.V.–Visible-infrared transmission, and optical gap • Study of the surface topography of the films by using Atomic Force microscopy • The use of a capacitively coupled plasma enhanced chemical vapor deposition method

  1. A study on the shell wall thinning causes identified through experiment, numerical analysis and ultrasonic test of high-pressure feedwater heater

    Hwang, Kyeong Mo; Woo, Lee; Jin, Tae Eun; Kim, Kyung Hoon

    2008-01-01

    Feedwater heaters of many nuclear power plants have recently experienced severe wall thinning damage, which accelerates as the operation progresses. Several nuclear power plants in Korea have undergone this damage around the impingement baffle - installed downstream of the high-pressure turbine extraction steam line - inside numbers 5A and 5B feedwater heaters. At that point, the extracted steam from the high-pressure turbine consists in the form of two-phase fluid at high temperature, high pressure and high velocity. Since it flows in reverse direction after impinging the impingement baffle, the shell wall of number 5 high-pressure feedwater heater may be affected by flow-accelerated corrosion. This paper describes the comparisons between the numerical analysis results using the FLUENT code and the downscaled experimental data in an effort to determine root causes of the shell wall thinning of the high-pressure feedwater heaters. The numerical analysis and experimental data were also confirmed by the actual wall thickness measured by ultrasonic tests. From the comparison of the results for the local velocity profiles and the wall thinning measurements, the local velocity component only in the y-direction flowing vertically to the shell wall, and not in the x- and z-directions, was analogous to the wall thinning data

  2. Changes of optical, dielectric, and structural properties of Si15Sb85 phase change memory thin films under different initializing laser power

    Huang Huan; Zhang Lei; Wang Yang; Han Xiaodong; Wu Yiqun; Zhang Ze; Gan Fuxi

    2011-01-01

    Research highlights: → We study the optical, dielectric, and structural characteristics of Si 15 Sb 85 phase change memory thin films under a moving continuous-wave laser initialization. → The optical and dielectric constants, absorption coefficient of Si 15 Sb 85 change regularly with the increasing laser power. → The optical band gaps of Si 15 Sb 85 irradiated upon different power lasers were calculated. → HRTEM images of the samples were observed and the changes of optical and dielectric constants are determined by crystalline structures changes of the films. - Abstract: The optical, dielectric, and structural characteristics of Si 15 Sb 85 phase change memory thin films under a moving continuous-wave laser initialization are studied by using spectroscopic ellipsometry and high-resolution transmission electron microscopy. The dependence of complex refractive index, dielectric functions, absorption coefficient, and optical band gap of the films on its crystallization extents formed by the different initialization laser power are analyzed in detail. The structural change from as-deposited amorphous phase to distorted rhombohedra-Sb-like crystalline structure with the increase of initialization laser power is clearly observed with sub-nanometer resolution. The optical and dielectric constants, the relationship between them, and the local atomic arrangements of this new phase change material can help explain the phase change mechanism and design the practical phase change memory devices.

  3. Advances in High-Power, Ultrashort Pulse DPSSL Technologies at HiLASE

    Martin Smrž

    2017-10-01

    Full Text Available The development of kW-class diode-pumped picosecond laser sources emitting at various wavelengths started at the HiLASE Center four years ago. A 500-W Perla C thin-disk laser with a diffraction limited beam and repetition rate of 50–100 kHz, a frequency conversion to mid-infrared (mid-IR, and second to fifth harmonic frequencies was demonstrated. We present an updated review on the progress in the development of compact picosecond and femtosecond high average power radiation sources covering the ultraviolet (UV to mid-IR spectral range at the HiLASE Center. We also report on thin-disk manufacturing by atomic diffusion bonding, which is a crucial technology for future high-power laser development.

  4. Development of Wall-Thinning Evaluation Procedure for Nuclear Power Plant Piping—Part 1: Quantification of Thickness Measurement Deviation

    Hun Yun

    2016-06-01

    Full Text Available Pipe wall thinning by flow-accelerated corrosion and various types of erosion is a significant and costly damage phenomenon in secondary piping systems of nuclear power plants (NPPs. Most NPPs have management programs to ensure pipe integrity due to wall thinning that includes periodic measurements for pipe wall thicknesses using nondestructive evaluation techniques. Numerous measurements using ultrasonic tests (UTs; one of the nondestructive evaluation technologies have been performed during scheduled outages in NPPs. Using the thickness measurement data, wall thinning rates of each component are determined conservatively according to several evaluation methods developed by the United States Electric Power Research Institute. However, little is known about the conservativeness or reliability of the evaluation methods because of a lack of understanding of the measurement error. In this study, quantitative models for UT thickness measurement deviations of nuclear pipes and fittings were developed as the first step for establishing an optimized thinning evaluation procedure considering measurement error. In order to understand the characteristics of UT thickness measurement errors of nuclear pipes and fittings, round robin test results, which were obtained by previous researchers under laboratory conditions, were analyzed. Then, based on a large dataset of actual plant data from four NPPs, a quantitative model for UT thickness measurement deviation is proposed for plant conditions.

  5. 14 CFR 101.25 - Operating limitations for Class 2-High Power Rockets and Class 3-Advanced High Power Rockets.

    2010-01-01

    ... Power Rockets and Class 3-Advanced High Power Rockets. 101.25 Section 101.25 Aeronautics and Space... OPERATING RULES MOORED BALLOONS, KITES, AMATEUR ROCKETS AND UNMANNED FREE BALLOONS Amateur Rockets § 101.25 Operating limitations for Class 2-High Power Rockets and Class 3-Advanced High Power Rockets. When operating...

  6. Fault analysis and strategy of high pulsed power supply for high power laser

    Liu Kefu; Qin Shihong; Li Jin; Pan Yuan; Yao Zonggan; Zheng Wanguo; Guo Liangfu; Zhou Peizhang; Li Yizheng; Chen Dehuai

    2001-01-01

    according to the requirements of driving flash-lamp, a high pulsed power supply (PPS) based on capacitors as energy storage elements is designed. The author analyzes in detail the faults of high pulsed power supply for high power laser. Such as capacitor internal short-circuit, main bus breakdown to ground, flashlamp sudden short or break. The fault current and voltage waveforms were given by circuit simulations. Based on the analysis and computation, the protection strategy with the fast fuse and ZnO was put forward, which can reduce the damage of PPS to the lower extent and provide the personnel safe and collateral property from the all threats. The preliminary experiments demonstrated that the design of the PPS can satisfy the project requirements

  7. Optimal Operation of Plug-In Electric Vehicles in Power Systems with High Wind Power Penetrations

    Hu, Weihao; Su, Chi; Chen, Zhe

    2013-01-01

    in the power systems with high wind power penetrations. In this paper, the integration of plug-in electric vehicles in the power systems with high wind power penetrations is proposed and discussed. Optimal operation strategies of PEV in the spot market are proposed in order to decrease the energy cost for PEV......The Danish power system has a large penetration of wind power. The wind fluctuation causes a high variation in the power generation, which must be balanced by other sources. The battery storage based Plug-In Electric Vehicles (PEV) may be a possible solution to balance the wind power variations...... owners. Furthermore, the application of battery storage based aggregated PEV is analyzed as a regulation services provider in the power system with high wind power penetrations. The western Danish power system where the total share of annual wind power production is more than 27% of the electrical energy...

  8. Supersonic cluster beams: a powerful method for the deposition of nanostructured thin films with tailored properties

    Milani, P.

    2002-01-01

    By using a pulsed micro-plasma cluster source and by exploiting aero-dynamical effects typical of supersonic beams it is possible to obtain very high deposition rates with a control on neutral cluster mass distribution, allowing the deposition of thin films with controlled nanostructure. Due to high deposition rates, high lateral resolution, low temperature processing supersonic cluster beams can also be used for the micro and nano-patterning of cluster-assembled films when little or no post-growth manipulation or assembly is required. For example the nano and meso-structure of films obtained by carbon cluster beam deposition can be controlled by selecting in the beam the elemental building blocks, moreover functional properties such as field emission can be controlled and tailored. The use of supersonic cluster beams opens also new perspectives for the production of nano-structured films with novel physico-chemical and topological properties such as nano-structured carbon matrices containing carbide and transition metal particles. (Author)

  9. High power diode laser remelting of metals

    Chmelickova, H; Tomastik, J; Ctvrtlik, R; Supik, J; Nemecek, S; Misek, M

    2014-01-01

    This article is focused on the laser surface remelting of the steel samples with predefined overlapping of the laser spots. The goal of our experimental work was to evaluate microstructure and hardness both in overlapped zone and single pass ones for three kinds of ferrous metals with different content of carbon, cast iron, non-alloy structural steel and tool steel. High power fibre coupled diode laser Laserline LDF 3600-100 was used with robotic guided processing head equipped by the laser beam homogenizer that creates rectangular beam shape with uniform intensity distribution. Each sample was treated with identical process parameters - laser power, beam diameter, focus position, speed of motion and 40% spot overlap. Dimensions and structures of the remelted zone, zone of the partial melting, heat affected zone and base material were detected and measured by means of laser scanning and optical microscopes. Hardness progress in the vertical axis of the overlapped zone from remelted surface layer to base material was measured and compared with the hardness of the single spots. The most hardness growth was found for cast iron, the least for structural steel. Experiment results will be used to processing parameters optimization for each tested material separately.

  10. Improved Collectors for High Power Gyrotrons

    Ives, R. Lawrence; Singh, Amarjit; Read, Michael; Borchard, Philipp; Neilson, Jeff

    2009-01-01

    High power gyrotrons are used for electron cyclotron heating, current drive and parasitic mode suppression in tokamaks for fusion energy research. These devices are crucial for successful operation of many research programs around the world, including the ITER program currently being constructed in France. Recent gyrotron failures resulted from cyclic fatigue of the copper material used to fabricated the collectors. The techniques used to collect the spent beam power is common in many gyrotrons produced around the world. There is serious concern that these tubes may also be at risk from cyclic fatigue. This program addresses the cause of the collector failure. The Phase I program successfully demonstrated feasibility of a mode of operation that eliminates the cyclic operation that caused the failure. It also demonstrated that new material can provide increased lifetime under cyclic operation that could increase the lifetime by more than on order of magnitude. The Phase II program will complete that research and develop a collector that eliminates the fatigue failures. Such a design would find application around the world.

  11. High quality atomically thin PtSe2 films grown by molecular beam epitaxy

    Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

    2017-12-01

    Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

  12. High performance, transparent a-IGZO TFTs on a flexible thin glass substrate

    Lee, Gwang Jun; Jang, Jae Eun; Kim, Joonwoo; Kim, Jung-Hye; Jeong, Soon Moon; Jeong, Jaewook

    2014-01-01

    We investigated electrical properties of transparent amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with amorphous indium zinc oxide (a-IZO) transparent electrodes on a flexble thin glass substrate. The TFTs show a high field-effect mobility, a good subthreshold slope and a high on/off ratio owing to the high temperature thermal annealing process which cannot be applied to typical transparent polymer-based flexible substrates. Bias stress instability tests applying tensile stress concurrently with the bending radius of up to 40 mm indicated that mechanically and electrically stable a-IGZO TFTs can be fabricated on the transparent thin glass substrate. (paper)

  13. Series-Tuned High Efficiency RF-Power Amplifiers

    Vidkjær, Jens

    2008-01-01

    An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.......An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits....

  14. High Power Flex-Propellant Arcjet Performance

    Litchford, Ron J.

    2011-01-01

    implied nearly frozen flow in the nozzle and yielded performance ranges of 800-1100 sec for hydrogen and 400-600 sec for ammonia. Inferred thrust-to-power ratios were in the range of 30-10 lbf/MWe for hydrogen and 60-20 lbf/MWe for ammonia. Successful completion of this test series represents a fundamental milestone in the progression of high power arcjet technology, and it is hoped that the results may serve as a reliable touchstone for the future development of MW-class regeneratively-cooled flex-propellant plasma rockets.

  15. Splitting of high power, cw proton beams

    Alberto Facco

    2007-09-01

    Full Text Available A simple method for splitting a high power, continuous wave (cw proton beam in two or more branches with low losses has been developed in the framework of the EURISOL (European Isotope Separation On-Line Radioactive Ion Beam Facility design study. The aim of the system is to deliver up to 4 MW of H^{-} beam to the main radioactive ion beam production target, and up to 100 kW of proton beams to three more targets, simultaneously. A three-step method is used, which includes magnetic neutralization of a fraction of the main H^{-} beam, magnetic splitting of H^{-} and H^{0}, and stripping of H^{0} to H^{+}. The method allows slow raising and individual fine adjustment of the beam intensity in each branch.

  16. Survey on modern pulsed high power lasers

    Witte, K.J.

    1985-01-01

    The requirements to be met by lasers for particle acceleration are partially similar to those already known for fusion lasers. The power level wanted in both caes is up to 100 TW or even more. The pulse durations favourable for laser accelerators are in the range from 1 ps to 1000 ps whereas fusion lasers require several ns. The energy range for laser accelerators is thus correspondingly smaller than that for fusion lasers: 1-100 kJ versus several 100 kJ. The design criteria of lasers meeting the requirements are discussed in the following. The CO 2 , iodine, Nd:glass and excimer lasers are treated in detail. The high repetition rate aspect will not be particularly addressed since for the present generation of lasers the wanted rates of far above 1 Hz are completely out of scope. Moreover, for the demonstration of principle these rates are not needed. (orig./HSI)

  17. QED studies using high-power lasers

    Mattias Marklund

    2010-01-01

    Complete text of publication follows. The event of extreme lasers, which intensities above 10 22 W/cm 2 will be reached on a routine basis, will give us opportunities to probe new aspects of quantum electrodynamics. In particular, the non-trivial properties of the quantum vacuum can be investigated as we reach previously unattainable laser intensities. Effects such as vacuum birefringence and pair production in strong fields could thus be probed. The prospects of obtaining new insights regarding the non-perturbative structure of quantum field theories shows that the next generation laser facilities can be important tool for fundamental physical studies. Here we aim at giving a brief overview of such aspects of high-power laser physics.

  18. High-power laser diodes with high polarization purity

    Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

    2017-02-01

    Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

  19. High technology supporting nuclear power industry in CRIEPI

    Ueda, Nobuyuki

    2009-01-01

    As a central research institute of electric power industry, Central Research Institute of Electric Power Industry (CRIEPI) has carried out R and D on broad range of topics such as power generation, power transmission, power distribution, power application and energy economics and society, aiming to develop prospective and advanced technologies, fundamental reinforce technologies and next-generation core technologies. To realize low-carbon society to cope with enhancement of global environmental issues, nuclear power is highly recommended as large-scale power with low-carbon emission. At the new start of serial explanation on advanced technologies, R and D on electric power industry was outlined. (T. Tanaka)

  20. High-temperature stability of thermoelectric Ca3Co4O9 thin films

    Brinks, P.; Van Nong, Ngo; Pryds, Nini

    2015-01-01

    An enhanced thermal stability in thermoelectric Ca3Co4O9 thin films up to 550 °C in an oxygen rich environment was demonstrated by high-temperature electrical and X-ray diffraction measurements. In contrast to generally performed heating in helium gas, it is shown that an oxygen/helium mixture...... provides sufficient thermal contact, while preventing the previously disregarded formation of oxygen vacancies. Combining thermal cycling with electrical measurements proves to be a powerful tool to study the real intrinsic thermoelectric behaviour of oxide thin films at elevated temperatures. © 2015 AIP...

  1. Ceramic-supported thin PVA pervaporation membranes combining high flux and high selectivity : contradicting the flux-selectivity paradigm

    Peters, T.A.; Poeth, C.H.S.; Benes, N.E.; Buijs, H.C.W.M.; Vercauteren, F.F.; Keurentjes, J.T.F.

    2006-01-01

    Thin, high-flux and highly selective cross-linked poly(vinyl)alcohol waterselective layers have been prepared on top of hollow fibre ceramic supports. The supports consist of an alpha-Al2O3 hollow fibre substrate and an intermediate gamma-Al2O3 layer, which provides a sufficiently smooth surface for

  2. Fighting in thin air: operational wilderness medicine in high Asia.

    Rodway, George W; Muza, Stephen R

    2011-12-01

    The current conflict in Afghanistan is the first major military action in which the United States and other North Atlantic Treaty Organization (NATO) forces have found themselves regularly engaged in combat at high altitudes. However, high altitude warfare is not a new concept in Asia by any means. This article will offer a short general historical review of high altitude warfare in Asia and then specifically address some of the operational challenges faced by troops carrying out missions at high altitude in the ongoing conflict in Afghanistan. Additionally, there will be discussion of evidence-based interventions being used to attempt to maintain optimal health of the warfighter at high altitude in this theater of operations. Years of research into how to alleviate the problematic nature of military operations in the high altitude environment has resulted in extensive risk management recommendations from the US Army, specifically aimed at preventing altitude-related casualties. Copyright © 2011 Wilderness Medical Society. Published by Elsevier Inc. All rights reserved.

  3. Switching transients in high-frequency high-power converters using power MOSFET's

    Sloane, T. H.; Owen, H. A., Jr.; Wilson, T. G.

    1979-01-01

    The use of MOSFETs in a high-frequency high-power dc-to-dc converter is investigated. Consideration is given to the phenomena associated with the paralleling of MOSFETs and to the effect of stray circuit inductances on the converter circuit performance. Analytical relationships between various time constants during the turning-on and turning-off intervals are derived which provide estimates of plateau and peak levels during these intervals.

  4. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy

    Lai Yiuwai; Hofmann, Martin R; Ludwig, Alfred; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios

    2011-01-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  5. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  6. High-coercivity FePt nanoparticle assemblies embedded in silica thin films

    Yan, Q; Purkayastha, A; Singh, A P; Li, H; Ramanath, G; Li, A; Ramanujan, R V

    2009-01-01

    The ability to process assemblies using thin film techniques in a scalable fashion would be a key to transmuting the assemblies into manufacturable devices. Here, we embed FePt nanoparticle assemblies into a silica thin film by sol-gel processing. Annealing the thin film composite at 650 deg. C transforms the chemically disordered fcc FePt phase into the fct phase, yielding magnetic coercivity values H c >630 mT. The positional order of the particles is retained due to the protection offered by the silica host. Such films with assemblies of high-coercivity magnetic particles are attractive for realizing new types of ultra-high-density data storage devices and magneto-composites.

  7. Chaos in high-power high-frequency gyrotrons

    Airila, M.

    2004-01-01

    Gyrotron interaction is a complex nonlinear dynamical process, which may turn chaotic in certain circumstances. The emergence of chaos renders dynamical systems unpredictable and causes bandwidth broadening of signals. Such effects would jeopardize the prospect of advanced gyrotrons in fusion. Therefore, it is important to be aware of the possibility of chaos in gyrotrons. There are three different chaos scenarios closely related to the development of high-power gyrotrons: First, the onset of chaos in electron trajectories would lead to difficulties in the design and efficient operation of depressed potential collectors, which are used for efficiency enhancement. Second, the radio-frequency signal could turn chaotic, decreasing the output power and the spectral purity of the output signal. As a result, mode conversion, transmission, and absorption efficiencies would be reduced. Third, spatio-temporal chaos in the resonator field structure can set a limit for the use of large-diameter interaction cavities and high-order TE modes (large azimuthal index) allowing higher generated power. In this thesis, the issues above are addressed with numerical modeling. It is found that chaos in electron residual energies is practically absent in the parameter region corresponding to high efficiency. Accordingly, depressed collectors are a feasible solution also in advanced high-power gyrotrons. A new method is presented for straightforward numerical solution of the one-dimensional self-consistent time-dependent gyrotron equations, and the method is generalized to two dimensions. In 1D, a chart of gyrotron oscillations is calculated. It is shown that the regions of stationary oscillations, automodulation, and chaos have a complicated topology in the plane of generalized gyrotron variables. The threshold current for chaotic oscillations exceeds typical operating currents by a factor of ten. However, reflection of the output signal may significantly lower the threshold. 2D

  8. A highly selective and wide range ammonia sensor—Nanostructured ZnO:Co thin film

    Mani, Ganesh Kumar; Rayappan, John Bosco Balaguru

    2015-01-01

    Graphical abstract: - Highlights: • Cobalt doped nanostructured ZnO thin films were spray deposited on glass substrates. • Co-doped ZnO film was highly selective towards ammonia than ethanol, methanol, etc. • The range of ammonia detection was improved significantly by doping cobalt in ZnO. - Abstract: Ammonia sensing characteristics of undoped and cobalt (Co)-doped nanostructured ZnO thin films were investigated. Polycrystalline nature with hexagonal wurtzite structure and high crystalline quality with dominant (0 0 2) plane orientation of Co-doped ZnO film were confirmed by the X-ray diffractogram. Scanning electron micrographs of the undoped film demonstrated the uniform deposition of sphere-shaped grains. But, smaller particles with no clear grain boundaries were observed for Co-doped ZnO thin film. Band gap values were found to be 3.26 eV and 3.22 eV for undoped and Co-doped ZnO thin films. Ammonia sensing characteristics of Co-doped ZnO film at room temperature were investigated in the concentration range of 15–1000 ppm. Variation in the sensing performances of Co-doped and pure ZnO thin films has been analyzed and compared

  9. High-pressure oxygenation of thin-wall YBCO single-domain samples

    Chaud, X; Savchuk, Y; Sergienko, N; Prikhna, T; Diko, P

    2008-01-01

    The oxygen annealing of ReBCO bulk material, necessary to achieve superconducting properties, usually induces micro- and macro-cracks. This leads to a crack-assisted oxygenation process that allows oxygenating large bulk samples faster than single crystals. But excellent superconducting properties are cancelled by the poor mechanical ones. More progressive oxygenation strategy has been shown to reduce drastically the oxygenation cracks. The problem then arises to keep a reasonable annealing time. The concept of bulk Y123 single-domain samples with thin-wall geometry has been introduced to bypass the inherent limitation due to a slow oxygen diffusion rate. But it is not enough. The use of a high oxygen pressure (16 MPa) enables to speed up further the process. It introduces a displacement in the equilibrium phase diagram towards higher temperatures, i.e., higher diffusion rates, to achieve a given oxygen content in the material. Remarkable results were obtained by applying such a high pressure oxygen annealing process on thin-wall single-domain samples. The trapped field of 16 mm diameter Y123 thin-wall single-domain samples was doubled (0.6T vs 0.3T at 77K) using an annealing time twice shorter (about 3 days). The initial development was made on thin bars. The advantage of thin-wall geometry is that such an annealing can be applied directly to a much larger sample

  10. Power transistor module for high current applications

    Cilyo, F.F.

    1975-01-01

    One of the parts needed for the control system of the 400-GeV accelerator at Fermilab was a power transistor with a safe operating area of 1800A at 50V, dc current gain of 100,000 and 20 kHz bandwidth. Since the commercially available discrete devices and power hybrid packages did not meet these requirements, a power transistor module was developed which performed satisfactorily. By connecting 13 power transistors in parallel, with due consideration for network and heat dissipation problems, and by driving these 13 with another power transistor, a super power transistor is made, having an equivalent current, power, and safe operating area capability of 13 transistors. For higher capabilities, additional modules can be conveniently added. (auth)

  11. High power accelerator for environmental application

    Han, B.; Kim, J.K.; Kim, Y.R.; Kim, S.M.

    2011-01-01

    The problems of environmental damage and degradation of natural resources are receiving increasing attention throughout the world. The increased population, higher living standards, increased urbanization and enhanced industrial activities of humankind are all leading to degradation of the environment. Increasing urbanization has been accompanied by significant environmental pollution, given the seriousness of the situation and future risk of crises, there is an urgent need to develop the efficient technologies including economical treatment methods. Therefore, cost-effective treatment of the stack gases, wastewater and sludge containing refractory pollutant with electron beam is actively studied in EB TECH Co. Electron beam treatment of such hazardous wastes is caused by the decomposition of pollutants as a result of their reactions with highly reactive species formed from radiolysis. However, to have advantages over existing processes, the electron beam process should have cost-effective and reliable in operation. Therefore high power accelerators (400kW~1MW) are developed for environmental application and they show the decrease in the cost of construction and operation of electron beam plant. In other way to reduce the cost for treatment, radical reactions accompanied by the other processes are introduced, and the synergistic effect upon the use of combined methods such as electron beam treatment with catalytic system, biological treatment and physico-chemical adsorption and others also show the improvement of the effect of electron beam treatment. (author)

  12. High-average-power solid state lasers

    Summers, M.A.

    1989-01-01

    In 1987, a broad-based, aggressive R ampersand D program aimed at developing the technologies necessary to make possible the use of solid state lasers that are capable of delivering medium- to high-average power in new and demanding applications. Efforts were focused along the following major lines: development of laser and nonlinear optical materials, and of coatings for parasitic suppression and evanescent wave control; development of computational design tools; verification of computational models on thoroughly instrumented test beds; and applications of selected aspects of this technology to specific missions. In the laser materials areas, efforts were directed towards producing strong, low-loss laser glasses and large, high quality garnet crystals. The crystal program consisted of computational and experimental efforts aimed at understanding the physics, thermodynamics, and chemistry of large garnet crystal growth. The laser experimental efforts were directed at understanding thermally induced wave front aberrations in zig-zag slabs, understanding fluid mechanics, heat transfer, and optical interactions in gas-cooled slabs, and conducting critical test-bed experiments with various electro-optic switch geometries. 113 refs., 99 figs., 18 tabs

  13. High power accelerator for environmental application

    Han, B.; Kim, J. K.; Kim, Y. R.; Kim, S. M. [EB-TECH Co., Ltd., Yuseong-gu Daejeon (Korea, Republic of)

    2011-07-01

    The problems of environmental damage and degradation of natural resources are receiving increasing attention throughout the world. The increased population, higher living standards, increased urbanization and enhanced industrial activities of humankind are all leading to degradation of the environment. Increasing urbanization has been accompanied by significant environmental pollution, given the seriousness of the situation and future risk of crises, there is an urgent need to develop the efficient technologies including economical treatment methods. Therefore, cost-effective treatment of the stack gases, wastewater and sludge containing refractory pollutant with electron beam is actively studied in EB TECH Co. Electron beam treatment of such hazardous wastes is caused by the decomposition of pollutants as a result of their reactions with highly reactive species formed from radiolysis. However, to have advantages over existing processes, the electron beam process should have cost-effective and reliable in operation. Therefore high power accelerators (400kW~1MW) are developed for environmental application and they show the decrease in the cost of construction and operation of electron beam plant. In other way to reduce the cost for treatment, radical reactions accompanied by the other processes are introduced, and the synergistic effect upon the use of combined methods such as electron beam treatment with catalytic system, biological treatment and physico-chemical adsorption and others also show the improvement of the effect of electron beam treatment. (author)

  14. High power accelerators and wastewater treatment

    Han, B.; Kim, J.K.; Kim, Y.R.; Kim, S.M.; Makaov, I.E.; Ponomarev, A.V.

    2006-01-01

    The problems of environmental damage and degradation of natural resources are receiving increasing attention throughout the world. The increased population, higher living standards, increased urbanization and enhanced industrial activities of humankind are all leading to degradation of the environment. Increasing urbanization has been accompanied by significant water pollution. Given the seriousness of the situation and future risk of crises, there is an urgent need to develop the water-efficient technologies including economical treatment methods of wastewater and polluted water. Therefore, cost-effective treatment of the municipal and industrial wastewater containing refractory pollutant with electron beam is actively studied in EB TECH Co.. Electron beam treatment of wastewater is caused by the decomposition of pollutants as a result of their reactions with highly reactive species formed from water radiolysis (hydrated electron, OH free radical and H atom). However, to have advantages over existing processes, the electron beam process should have cost-effective and reliable in operation. Therefore high power accelerators (400kW∼1MW) are developed for environmental application and they show the decrease in the cost of construction and operation of electron beam plant. In other way to reduce the cost for wastewater treatment, radical reactions accompanied by the other processes are introduced, and the synergistic effect upon the use of combined methods such as electron beam treatment with ozonation, biological treatment and physico-chemical adsorption and others also show the improvement of the effect of electron beam treatment for the wastewater purification. (author)

  15. High power diode lasers converted to the visible

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Andersen, Peter E.

    2017-01-01

    High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking high power diode lasers with good spatial quality. In this paper, we highlight some of our recent...... results in nonlinear frequency conversion of high power near infrared diode lasers to the visible spectral region....

  16. Patterned magnetic thin films for ultra high density recording

    Haast, M.A.M.

    This thesis describes the results of a research project in the field of high bit-density data-storage media. More specifically, the material aspects of the novel recording technique using patterned media have been studied. The aim of the work was the design, realization and characterization of such

  17. Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

    Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

    2014-08-29

    Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

  18. Development of Faraday rotators for high power glass laser systems

    Yoshida, Kunio; Kato, Yoshiaki; Yamanaka, Chiyoe.

    1980-01-01

    As a new approach to nuclear fusion, laser-induced fusion has been recently highlighted. It is no exaggeration to say that the future success of this technique depends on the development of high power laser as the energy driver. Faraday rotators are used as photo-diodes to prevent amplifiers and oscillator assemblies from the possibility to be broken by reversely transmitting light. The authors were able to increase the isolation ratio by about 10 times as compared with conventional one by employing the large performance index, disc type Faraday glass, FR-5. In this paper, first, Faraday glasses which are the composing element of Faraday rotators and the optical characteristics of dielectric thin-film polarizers are described, and next, the design of a magnetic coil and its resulting coil characteristics are reported. Then the dominant causes limiting the isolation ratio of Faraday rotators are investigated, and it is clarified that the residual strain in Faraday glasses and the non-uniformity of magnetic field affect predominantly. The measured results are as follows: The magnetic flux densities required to rotate by 45 deg the polarizing plane of the light transmitted through the Faraday rotators A and B are both 27 kG; and the isolation ratios over the whole effective plane are 36 and 32 dB, respectively. (Wakatsuki, Y.)

  19. High RF Power Production for CLIC

    Syratchev, I; Adli, E; Taborelli, M

    2007-01-01

    The CLIC Power Extraction and Transfer Structure (PETS) is a passive microwave device in which bunches of the drive beam interact with the impedance of the periodically loaded waveguide and excite preferentially the synchronous mode. The RF power produced (several hundred MW) is collected at the downstream end of the structure by means of the Power Extractor and delivered to the main linac structure. The PETS geometry is a result of multiple compromises between beam stability and main linac RF power needs. Another requirement is to provide local RF power termination in case of accelerating structure failure (ON/OFF capability). Surface electric and magnetic fields, power extraction method, HOM damping, ON/OFF capability and fabrication technology were all evaluated to provide a reliable design

  20. Highly oriented thin films of a substituted oligo(para-phenylenevinylene) on friction-transferred PTFE substrates

    Gill, R.E; Hadziioannou, G; Lang, P.; Garnier, F.; Wittmann, J.C.

    Communication: Highly oriented thin films of oligo(p-phenylenevinylene)s, oligoPPVs, provide information about the structure of polyPPV and structure-property relationships. It is shown that deposition of a substituted oligoPPV onto highly preoriented PTFE substrates leads to highly oriented thin

  1. High resolution hard X-ray photoemission using synchrotron radiation as an essential tool for characterization of thin solid films

    Kim, J.J.; Ikenaga, E.; Kobata, M.; Takeuchi, A.; Awaji, M.; Makino, H.; Chen, P.P.; Yamamoto, A.; Matsuoka, T.; Miwa, D.; Nishino, Y.; Yamamoto, T.; Yao, T.; Kobayashi, K.

    2006-01-01

    Recently, we have shown that hard X-ray photoemission spectroscopy using undulator X-rays at SPring-8 is quite feasible with both high resolution and high throughput. Here we report an application of hard X-ray photoemission spectroscopy to the characterization of electronic and chemical states of thin solid films, for which conventional PES is not applicable. As a typical example, we focus on the problem of the scatter in the reported band-gap values for InN. We show that oxygen incorporation into the InN film strongly modifies the valence and plays a crucial role in the band gap problem. The present results demonstrate the powerful applicability of high resolution photoemission spectroscopy with hard X-rays from a synchrotron source

  2. Growth of high quality large area MgB2 thin films by reactive evaporation

    Moeckly, Brian H.; Ruby, Ward S.

    2006-01-01

    We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials u...

  3. Novel technique of making thin target foil of high density material via rolling method

    Gupta, C. K.; Rohilla, Aman; Singh, R. P.; Singh, Gurjot; Chamoli, S. K.

    2018-05-01

    The conventional rolling method fails to yield good quality thin foils of thicknesses less than 2 mg/cm2 for high density materials with Z ≥ 70 (e.g. gold, lead). A special and improved technique has been developed to obtain such low thickness good quality gold foils by rolling method. Using this technique thin gold foils of thickness in the range of 0.850-2.5 mg/cm2 were obtained in the present work. By making use of alcohol during rolling, foils of thickness 1 mg/cm2 can be obtained in shorter time with less effort.

  4. Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings

    Kats, Mikhail A.; Byrnes, Steven J.; Blanchard, Romain; Kolle, Mathias; Genevet, Patrice; Aizenberg, Joanna; Capasso, Federico

    2013-09-01

    Recently a new class of optical interference coatings was introduced which comprises ultra-thin, highly absorbing dielectric layers on metal substrates. We show that these lossy coatings can be augmented by an additional transparent subwavelength layer. We fabricated a sample comprising a gold substrate, an ultra-thin film of germanium with a thickness gradient, and several alumina films. The experimental reflectivity spectra showed that the additional alumina layer increases the color range that can be obtained, in agreement with calculations. More generally, this transparent layer can be used to enhance optical absorption, protect against erosion, or as a transparent electrode for optoelectronic devices.

  5. Highly Yb-doped KGd(WO4)2 thin-film amplifier

    Yong, Yean Sheng; Aravazhi, S.; Vázquez-Córdova, Sergio Andrés; García Blanco, Sonia Maria; Pollnau, Markus

    We report record-high small-signal gain of 1050 dB/cm at 981 nm wavelength in a KGd0.425Yb0.575(WO4)2 thin film. The sensitivity of gain to the shift of beam-focus position, which is critical under non-waveguiding conditions, is investigated.

  6. Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates

    Evseev, S. B.; Milosavljevic, S.; Nanver, L. K.

    2017-01-01

    Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number of interfaces between

  7. Fabrication and research of high purity germanium detectors with abrupt and thin diffusion layer

    Rodriguez Cabal, A. E.; Diaz Garcia, A.

    1997-01-01

    A different high purity germanium detector's fabrication method is described. A very thin diffusion film with an abrupt change of the type of conductivity is obtained. The fine diffusion layer thickness makes possibly their utilization in experimental systems in which all the data are elaborated directly on the computer. (author) [es

  8. Opto-electrical approaches for high efficiency and ultra-thin c-Si solar cells

    Ingenito, A.; Isabella, O.; Zeman, M.

    2014-01-01

    The need for cost reduction requires using less raw material and cost-effective processes without sacrificing the conversion efficiency. For keeping high the generated photo-current, an advanced light trapping scheme for ultra-thin silicon wafers is here proposed, exhibiting absorptances up to 99%

  9. Thin Flexible IMM Solar Array, Phase II

    National Aeronautics and Space Administration — Thin, flexible, and highly efficient solar arrays are needed that package compactly for launch and deploy into large, structurally stable high power generators....

  10. Effect of plasma power on reduction of printable graphene oxide thin films on flexible substrates

    Banerjee, Indrani; Mahapatra, Santosh K.; Pal, Chandana; Sharma, Ashwani K.; Ray, Asim K.

    2018-05-01

    Room temperature hydrogen plasma treatment on solution processed 300 nm graphene oxide (GO) films on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates has been performed by varying the plasma power between 20 W and 60 W at a constant exposure time of 30 min with a view to examining the effect of plasma power on reduction of GO. X-ray powder diffraction (XRD) and Raman spectroscopic studies show that high energy hydrogen species generated in the plasma assist fast exfoliation of the oxygenated functional groups present in the GO samples. Significant decrease in the optical band gap is observed from 4.1 eV for untreated samples to 0.5 eV for 60 W plasma treated samples. The conductivity of the films treated with 60 W plasma power is estimated to be six orders of magnitude greater than untreated GO films and this enhancement of conductivity on plasma reduction has been interpreted in terms of UV-visible absorption spectra and density functional based first principle computational calculations. Plasma reduction of GO/ITO/PET structures can be used for efficiently tuning the electrical and optical properties of reduced graphene oxide (rGO) for flexible electronics applications.

  11. High Performance Infrared Plasmonic Metamaterial Absorbers and Their Applications to Thin-film Sensing

    Yue, Weisheng

    2016-04-07

    Plasmonic metamaterial absorbers (PMAs) have attracted considerable attention for developing various sensing devices. In this work, we design, fabricate and characterize PMAs of different geometrical shapes operating in mid-infrared frequencies, and explore the applications of the PMAs as sensor for thin films. The PMAs, consisting of metal-insulator-metal stacks with patterned gold nanostructured surfaces (resonators), demonstrated high absorption efficiency (87 to 98 %) of electromagnetic waves in the infrared regime. The position and efficiency of resonance absorption are dependent on the shape of the resonators. Furthermore, the resonance wavelength of PMAs was sensitive to the thin film coated on the surface of the PMAs, which was tested using aluminum oxide (Al2O3) as the film. With increase of the Al2O3 thickness, the position of resonance absorption shifted to longer wavelengths. The dependence of the resonant wavelength on thin film thickness makes PMAs a suitable candidate as a sensor for thin films. Using this sensing strategy, PMAs have potential as a new method for thin film detection and in situ monitoring of surface reactions. © 2016 Springer Science+Business Media New York

  12. High Performance Infrared Plasmonic Metamaterial Absorbers and Their Applications to Thin-film Sensing

    Yue, Weisheng; Wang, Zhihong; Yang, Yang; Han, Jiaguang; Li, Jingqi; Guo, Zaibing; Tan, Hua; Zhang, Xixiang

    2016-01-01

    Plasmonic metamaterial absorbers (PMAs) have attracted considerable attention for developing various sensing devices. In this work, we design, fabricate and characterize PMAs of different geometrical shapes operating in mid-infrared frequencies, and explore the applications of the PMAs as sensor for thin films. The PMAs, consisting of metal-insulator-metal stacks with patterned gold nanostructured surfaces (resonators), demonstrated high absorption efficiency (87 to 98 %) of electromagnetic waves in the infrared regime. The position and efficiency of resonance absorption are dependent on the shape of the resonators. Furthermore, the resonance wavelength of PMAs was sensitive to the thin film coated on the surface of the PMAs, which was tested using aluminum oxide (Al2O3) as the film. With increase of the Al2O3 thickness, the position of resonance absorption shifted to longer wavelengths. The dependence of the resonant wavelength on thin film thickness makes PMAs a suitable candidate as a sensor for thin films. Using this sensing strategy, PMAs have potential as a new method for thin film detection and in situ monitoring of surface reactions. © 2016 Springer Science+Business Media New York

  13. Highly-stabilized power supply for synchrotron accelerators. High speed, low ripple power supply

    Sato, Kenji [Osaka Univ., Ibaraki (Japan). Research Center for Nuclear Physics; Kumada, Masayuki; Fukami, Kenji; Koseki, Shoichiro; Kubo, Hiroshi; Kanazawa, Toru

    1997-02-01

    In synchrotron accelerators, in order to utilize high energy beam effectively, those are operated by repeating acceleration and taking-out at short period. In order to accelerate by maintaining beam track stable, the tracking performance with the error less than 10{sup -3} in the follow-up of current is required for the power supply. Further, in order to maintain the intensity and uniformity of beam when it is taken out, very low ripple is required for output current. The power supply having such characteristics has been developed, and applied to the HIMAC and the SPring-8. As the examples of the application of synchrotrons, the accelerators for medical treatment and the generation of synchrotron radiation are described. As to the power supply for the deflection magnets and quadrupole magnets of synchrotron accelerators, the specifications of the main power supply, the method of reducing ripple, the method of improving tracking, and active filter control are reported. As to the test results, the measurement of current ripple and tracking error is shown. The lowering of ripple was enabled by common mode filter and the symmetrical connection of electromagnets, and high speed response was realized by the compensation for delay with active filter. (K.I.)

  14. High thermoelectric power factor from multilayer solution-processed organic films

    Zuo, Guangzheng; Andersson, Olof; Abdalla, Hassan; Kemerink, Martijn

    2018-02-01

    We investigate the suitability of the "sequential doping" method of organic semiconductors for thermoelectric applications. The method consists of depositing a dopant (F4TCNQ) containing solution on a previously cast semiconductor (P3HT) thin film to achieve high conductivity, while preserving the morphology. For very thin films (˜25 nm), we achieve a high power factor around 8 μW/mK-2 with a conductivity over 500 S/m. For the increasing film thickness, conductivity and power factor show a decreasing trend, which we attribute to the inability to dope the deeper parts of the film. Since thick films are required to extract significant power from thermoelectric generators, we developed a simple additive technique that allows the deposition of an arbitrary number of layers without significant loss in conductivity or power factor that, for 5 subsequent layers, remain at ˜300 S/m and ˜5 μW/mK-2, respectively, whereas the power output increases almost one order of magnitude as compared to a single layer. The efficient doping in multilayers is further confirmed by an increased intensity of (bi)polaronic features in the UV-Vis spectra.

  15. Test of a High Power Target Design

    2002-01-01

    %IS343 :\\\\ \\\\ A high power tantalum disc-foil target (RIST) has been developed for the proposed radioactive beam facility, SIRIUS, at the Rutherford Appleton Laboratory. The yield and release characteristics of the RIST target design have been measured at ISOLDE. The results indicate that the yields are at least as good as the best ISOLDE roll-foil targets and that the release curves are significantly faster in most cases. Both targets use 20 -25 $\\mu$m thick foils, but in a different internal geometry.\\\\ \\\\Investigations have continued at ISOLDE with targets having different foil thickness and internal geometries in an attempt to understand the release mechanisms and in particular to maximise the yield of short lived isotopes. A theoretical model has been developed which fits the release curves and gives physical values of the diffusion constants.\\\\ \\\\The latest target is constructed from 2 $\\mu$m thick tantalum foils (mass only 10 mg) and shows very short release times. The yield of $^{11}$Li (half-life of ...

  16. The SPES High Power ISOL production target

    Andrighetto, A.; Corradetti, S.; Ballan, M.; Borgna, F.; Manzolaro, M.; Scarpa, D.; Monetti, A.; Rossignoli, M.; Silingardi, R.; Mozzi, A.; Vivian, G.; Boratto, E.; De Ruvo, L.; Sattin, N.; Meneghetti, G.; Oboe, R.; Guerzoni, M.; Margotti, A.; Ferrari, M.; Zenoni, A.; Prete, G.

    2016-11-01

    SPES (Selective Production of Exotic Species) is a facility under construction at INFN-LNL (Istituto Nazionale di Fisica Nucleare - Laboratori Nazionali di Legnaro), aimed to produce intense neutron-rich radioactive ion beams (RIBs). These will be obtained using the ISOL (Isotope Separation On-Line) method, bombarding a uranium carbide target with a proton beam of 40MeV energy and currents up to 200μA. The target configuration was designed to obtain a high number of fissions, up to 1013 per second, low power deposition and fast release of the produced isotopes. The exotic isotopes generated in the target are ionized, mass separated and re-accelerated by the ALPI superconducting LINAC at energies of 10AMeV and higher, for masses in the region of A = 130 amu , with an expected rate on the secondary target up to 109 particles per second. In this work, recent results on the R&D activities regarding the SPES RIB production target-ion source system are reported.

  17. High-power pure blue laser diodes

    Ohta, M.; Ohizumi, Y.; Hoshina, Y.; Tanaka, T.; Yabuki, Y.; Goto, S.; Ikeda, M. [Development Center, Sony Shiroishi Semiconductor Inc., Miyagi (Japan); Funato, K. [Materials Laboratories, Sony Corporation, Kanagawa (Japan); Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, Kanagawa (Japan)

    2007-06-15

    We successfully developed high-power and long-lived pure blue laser diodes (LDs) having an emission wavelength of 440-450 nm. The pure-blue LDs were grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates. The dislocation density was successfully reduced to {proportional_to}10{sup 6} cm{sup -2} by optimizing the MOCVD growth conditions and the active layer structure. The vertical layer structure was designed to have an absorption loss of 4.9 cm{sup -1} and an internal quantum efficiency of 91%. We also reduced the operating current density to 6 kA/cm{sup 2} under 750 mW continuous-wave operation at 35 C by optimizing the stripe width to 12 {mu}m and the cavity length to 2000 {mu}m. The half lifetimes in constant current mode are estimated to be longer than 10000 h. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Complete low power controller for high voltage power systems

    Sumner, R.; Blanar, G.

    1997-01-01

    The MHV100 is a custom CMOS integrated circuit, developed for the AMS experiment. It provides complete control for a single channel high voltage (HV) generator and integrates all the required digital communications, D to A and A to D converters, the analog feedback loop and output drivers. This chip has been designed for use in both distributed high voltage systems or for low cost single channel high voltage systems. The output voltage and current range is determined by the external components

  19. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

    2008-06-21

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

  20. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

    2008-01-01

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

  1. High-intensity, thin-target He-jet production source

    Bai, Y.; Vieira, D.J.; Wouters, J.M.; Butler, G.W.; Rosenauer, Dk; Loebner, K.E.G.; Lind, V.G.; Phillips, D.R.

    1996-01-01

    A thin-target He-jet system suited to the production and rapid transport of non-volatile radioactive species has been successfully operated with proton beam intensities of up to 700 μA. The system consists of a water-cooled, thin-target chamber, capillary gas transport system, moving tape/Ge detection system, and an aerosol generator/gas recirculator. The yields for a wide variety of uranium fission and deep spallation products have been measured and robust operation of the system demonstrated for several weeks. He-jet transport and collection efficiencies ranged between 15 and 25% with collection rates of 10 7 to 10 8 atoms/sec/isotope. The high-intensity, thin-target He-jet approach represents a robust production source for nonvolatile radioactive heavy ion beams

  2. High-Altitude Wind Power Generation

    Fagiano, L.; Milanese, M.; Piga, D.

    2010-01-01

    Abstract—The paper presents the innovative technology of highaltitude wind power generation, indicated as Kitenergy, which exploits the automatic flight of tethered airfoils (e.g., power kites) to extract energy from wind blowing between 200 and 800 m above the ground. The key points of this

  3. In situ determination of the dynamic properties of thinly-layered rock to evaluate rock-structure interaction at a nuclear power plant site

    Johnson, William J.; Rizzo, Paul C.

    1988-01-01

    The presence of layers of weak sedimentary rock in a column of otherwise competent rock can significantly affect the seismic response of nuclear power plant structures due to rock-structure interaction effects. The determination of the dynamic properties of thinly-layered rock is, however, difficult. When borings are placed close enough to allow for a characterization of refracted waves, other potential problems such as the identification of clear P- and S-wave arrivals, extremely short duration of records, near-field waves, instrumental stability, and overall record resolution become magnified. Other problems such as cultural noise and signal amplitude can become critical when high resolution is required. Conventional storage oscilloscopes and seismographs are inadequate under these conditions, but modern digital recording systems with the application of stringent calibration and recording procedures can yield successful results. A case history of a high-precision cross-hole survey to a depth of 150 meters in thinly-bedded sedimentary rock at a nuclear power plant site is presented in order to illustrate the systems and procedures necessary to obtain successful results under adverse conditions. (author)

  4. 30 GHz High Power Production for CLIC

    Syratchev, I V

    2006-01-01

    The CLIC Power Extraction and Transfer Structure (PETS) is a passive microwave device in which bunches of the drive beam interact with the impedance of the periodically loaded waveguide and excite preferentially the synchronous TM01 mode at 30 GHz. The RF power produced (several hundred MW) is collected at the downstream end of the structure by means of the Power Extractor and conveyed to the main linac structure. The PETS geometry is a result of multiple compromises between beam stability along a single decelerator sector (600 m) and the active length of the structure to match the main linac RF power needs and layout. Surface electric and magnetic fields, power extraction method, HOM damping, ON/OFF capability and fabrication technology were all evaluated to provide a reliable design.

  5. The influence of RF power on the electrical properties of sputtered amorphous In—Ga—Zn—O thin films and devices

    Shi Junfei; Dong Chengyuan; Wu Jie; Chen Yuting; Zhan Runze; Dai Wenjun

    2013-01-01

    The influence of radio frequency (RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide (a-IGZO) thin films and the related thin-film transistor (TFT) devices is investigated comprehensively. A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined. The results prove that the deposition rate sensitively depends on RF power. In addition, the carrier concentration increases from 0.91 × 10 19 to 2.15 × 10 19 cm −3 with the RF power rising from 40 to 80 W, which may account for the corresponding decrease in the resistivity of the a-IGZO thin films. No evident impacts of RF power are observed on the surface roughness, crystalline nature and stoichiometry of the a-IGZO samples. On the other hand, optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W, as is supposed to result from the carrier-induced band-filling effect. The rise in RF power can also affect the performance of a-IGZO TFTs, in particular by increasing the field-effect mobility clearly, which is assumed to be due to the alteration of the extended states in a-IGZO thin films. (semiconductor devices)

  6. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  7. New Sunshine Project FY 1996 report on the results of development of photovoltaic power generation system commercialization technologies. Research on commercialization of the technologies for production of thin-film photovoltaic cells (Development of fabrication technologies of high-quality CuInSe{sub 2}-based thin-film solar cells); 1996 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu (kohinshitsuka gijutsu (CuInSe{sub 2} taiyo denchi seizo no gijutsu kaihatsu))

    NONE

    1997-03-01

    Described herein are the FY 1996 results of development of fabrication technologies for high-quality CuInSe{sub 2}-based photovoltaic cells. The Cu-Ga alloy/In-stacked precursor film is prepared for production of the high-quality thin-film absorber applicable to large-area module fabrication, and selenized by the vapor-phase selenization in a H{sub 2}Se gas atmosphere to produce the thin light-absorbing film in which In and Ga are present at graded concentrations. Increasing Ga alloy content in the CIGS-based thin-film photovoltaic cell fails to widen the forbidden band and improve V{sub oc}, and further optimization works are needed. The method is developed for production of thin-film buffer layer of sulfur-containing Zn compound which can give the cell characteristics equivalent to those of CdS generally used for CIS-based thin-film photovoltaic cell. It is clarified that the photovoltaic cell characteristics can be improved by use of a transparent electroconductive ZnO film of stacked structure, produced by a combination of RF sputtering and DC sputtering. For the patterning technologies necessary for forming series connection on a mini-module, the laser scribing method is applicable to the metal base-electrode, and the mechanical scribing method to the light absorber and window layer. (NEDO)

  8. Temperature Gradient Effect on Gas Discrimination Power of a Metal-Oxide Thin-Film Sensor Microarray

    Joachim Goschnick

    2004-05-01

    Full Text Available Abstract: The paper presents results concerning the effect of spatial inhomogeneous operating temperature on the gas discrimination power of a gas-sensor microarray, with the latter based on a thin SnO2 film employed in the KAMINA electronic nose. Three different temperature distributions over the substrate are discussed: a nearly homogeneous one and two temperature gradients, equal to approx. 3.3 oC/mm and 6.7 oC/mm, applied across the sensor elements (segments of the array. The gas discrimination power of the microarray is judged by using the Mahalanobis distance in the LDA (Linear Discrimination Analysis coordinate system between the data clusters obtained by the response of the microarray to four target vapors: ethanol, acetone, propanol and ammonia. It is shown that the application of a temperature gradient increases the gas discrimination power of the microarray by up to 35 %.

  9. A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2018-01-01

    . This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...

  10. Measurement of high-power microwave pulse under intense ...

    Abstract. KALI-1000 pulse power system has been used to generate single pulse nanosecond duration high-power microwaves (HPM) from a virtual cathode oscillator. (VIRCATOR) device. HPM power measurements were carried out using a transmitting– receiving system in the presence of intense high frequency (a few ...

  11. Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

    Govindaraju, N.; Singh, R.N.

    2011-01-01

    Highlights: → Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. → Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. → Temperatures below 290 deg. C for Si devices and 320 deg. C for HEMTs prevent metal damage. → Development of novel NCD-based thermal management for power electronics feasible. - Abstract: High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 deg. C for Si devices and below 320 deg. C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

  12. Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

    Yue, Wan

    2016-09-28

    Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

  13. High quality, high efficiency welding technology for nuclear power plants

    Aoki, Shigeyuki; Nagura, Yasumi

    1996-01-01

    For nuclear power plants, it is required to ensure the safety under the high reliability and to attain the high rate of operation. In the manufacture and installation of the machinery and equipment, the welding techniques which become the basis exert large influence to them. For the purpose of improving joint performance and excluding human errors, welding heat input and the number of passes have been reduced, the automation of welding has been advanced, and at present, narrow gap arc welding and high energy density welding such as electron beam welding and laser welding have been put to practical use. Also in the welding of pipings, automatic gas metal arc welding is employed. As for the welding of main machinery and equipment, there are the welding of the joints that constitute pressure boundaries, the build-up welding on the internal surfaces of pressure vessels for separating primary water from them, and the sealing welding of heating tubes and tube plates in steam generators. These weldings are explained. The welding of pipings and the state of development and application of new welding methods are reported. (K.I.)

  14. High performance magnet power supply optimization

    Jackson, L.T.

    1975-01-01

    Three types of magnet power supply systems for the joint LBL-SLAC proposed accelerator PEP are discussed. The systems considered include a firing circuit and six-pulse controlled rectifier, transistor systems, and a chopper system. (U.S.)

  15. Controlled Compact High Voltage Power Lines

    Postolati V.

    2016-04-01

    Full Text Available Nowadays modern overhead transmission lines (OHL constructions having several significant differences from conventional ones are being used in power grids more and more widely. Implementation of compact overhead lines equipped with FACTS devices, including phase angle regulator settings (compact controlled OHL, appears to be one of the most effective ways of power grid development. Compact controlled AC HV OHL represent a new generation of power transmission lines embodying recent advanced achievements in design solutions, including towers and insulation, together with interconnection schemes and control systems. Results of comprehensive research and development in relation to 110–500kV compact controlled power transmission lines together with theoretical basis, substantiation, and methodological approaches to their practical application are presented in the present paper.

  16. A highly linear power amplifier for WLAN

    Jin Jie; Shi Jia; Ai Baoli; Zhang Xuguang

    2016-01-01

    A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P 1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. (paper)

  17. Flight Control of the High Altitude Wind Power System

    Podgaets, A.R.; Ockels, W.J.

    2007-01-01

    Closed loop Laddermill flight control problem is considered in this paper. Laddermill is a high altitude kites system for energy production. The kites have been simulated as rigid bodies and the cable as a thin elastic line. Euler angles and cable speed are controls. Flight control is written as a

  18. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  19. Advanced Capacitors for High-Power Applications, Phase I

    National Aeronautics and Space Administration — As the consumer and industrial requirements for compact, high-power-density, electrical power systems grow substantially over the next decade; there will be a...

  20. Advances in high-power rf amplifiers

    Tallerico, P.J.

    1979-01-01

    Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems

  1. Research, development and pilot production of high output thin silicon solar cells

    Iles, P. A.

    1976-01-01

    Work was performed to define and apply processes which could lead to high output from thin (2-8 mils) silicon solar cells. The overall problems are outlined, and two satisfactory process sequences were developed. These sequences led to good output cells in the thickness range to just below 4 mils; although the initial contract scope was reduced, one of these sequences proved capable of operating beyond a pilot line level, to yield good quality 4-6 mil cells of high output.

  2. Fabrication of thin TEM sample of ionic liquid for high-resolution ELNES measurements

    Miyata, Tomohiro, E-mail: tomo-m@iis.u-tokyo.ac.jp; Mizoguchi, Teruyasu, E-mail: teru@iis.u-tokyo.ac.jp

    2017-07-15

    Investigation of the local structure, ionic and molecular behavior, and chemical reactions at high spatial resolutions in liquids has become increasingly important. Improvements in these areas help to develop efficient batteries and improve organic syntheses. Transmission electron microscopy (TEM) and scanning-TEM (STEM) have excellent spatial resolution, and the electron energy-loss near edge structure (ELNES) measured by the accompanied electron energy-loss spectroscopy (EELS) is effective to analyze the liquid local structure owing to reflecting the electronic density of states. In this study, we fabricate a liquid-layer-only sample with thickness of single to tens nanometers using an ionic liquid. Because the liquid film has a thickness much less than the inelastic mean free path (IMFP) of the electron beam, the fine structure of the C-K edge electron energy loss near edge structure (ELNES) can be measured with sufficient resolution to allow meaningful analysis. The ELNES spectrum from the thin liquid film has been interpreted using first principles ELNES calculations. - Highlights: • A fabrication method of thin liquid film samples for STEM-EELS observations is proposed. • The thickness of the fabricated thin liquid film is about 10 nm. • An ELNES is measured from the thin liquid with a high energy resolution. • The peaks of the ELNES are interpreted using first principles calculations.

  3. Design and development of high voltage high power operational ...

    Applications of power operational amplifiers (opamps) are increasing day by day in the industry as they are used in audio amplifiers, Piezo transducer systems and the electron deflection systems. Power operational amplifiers have all the features of a general purpose opamp except the additional power handling capability.

  4. Atmospheric Propagation and Combining of High-Power Lasers

    2015-09-08

    Brightness-scaling potential of actively phase- locked solid state laser arrays,” IEEE J. Sel. Topics Quantum Electron., vol. 13, no. 3, pp. 460–472, May...attempting to phase- lock high-power lasers, which is not encountered when phase- locking low-power lasers, for example mW power levels. Regardless, we...technology does not currently exist. This presents a challenging problem when attempting to phase- lock high-power lasers, which is not encountered when

  5. Welding with high power fiber lasers - A preliminary study

    Quintino, L.; Costa, A.; Miranda, R.; Yapp, D.; Kumar, V.; Kong, C.J.

    2007-01-01

    The new generation of high power fiber lasers presents several benefits for industrial purposes, namely high power with low beam divergence, flexible beam delivery, low maintenance costs, high efficiency and compact size. This paper presents a brief review of the development of high power lasers, and presents initial data on welding of API 5L: X100 pipeline steel with an 8 kW fiber laser. Weld bead geometry was evaluated and transition between conduction and deep penetration welding modes was investigated

  6. Noise measurements of YBa2Cu3O7 thin film high-temperature superconductors

    Hall, J.J.

    1992-01-01

    The characteristics of thin-film YBa2Cu3O7 superconductors were studied from the superconducting region through the transition region and into the normal region. The properties studied included the resistance-temperature, current-voltage, and electrical noise with concentration of measurements in the transition region. The resistance vs. temperature measurements show a zero resistance followed by a small rise in magnitude at the onset of resistance followed by a sharp increase until the resistance tapers off in the fully normal region. The a-axis films had a larger normal resistivity, a lower critical temperature, and a broader transition than the similar c-axis films. The current(I) - voltage(V) measurements were concentrated in the transition region. A power relation between I and V was found to be V varies as I a(T) where a(T) is temperature dependent starting high the onset of vortex formation, approaches 3 at the vortex unbinding temperature, and goes to 1 when fully normal. This behavior was predicted by the Kosterlitz-Thouless theory and was found experimentally in all four films measured. The current-induced electrical noise characteristics were measured for four samples varying in thickness and axis orientation. Each film exhibited a widely varying magnitude of the noise voltage spectral density (S V ) in the transition region with a leveling off when fully normal. The normalized noise (S V /V squared) showed a sharp decrease in magnitude from the onset of measurable noise continually decreasing until flattening out when fully normal. The a-axis films exhibited S V /V squared over 3 order of magnitude larger than the c-axis films in the transition and normal regions. The normalized temperature coefficient of resistance (beta) was plotted against S V /V squared on a log-log scale to see if the noise generated was due to temperature fluctuations (slope = 2)

  7. Soft, thin skin-mounted power management systems and their use in wireless thermography.

    Lee, Jung Woo; Xu, Renxiao; Lee, Seungmin; Jang, Kyung-In; Yang, Yichen; Banks, Anthony; Yu, Ki Jun; Kim, Jeonghyun; Xu, Sheng; Ma, Siyi; Jang, Sung Woo; Won, Phillip; Li, Yuhang; Kim, Bong Hoon; Choe, Jo Young; Huh, Soojeong; Kwon, Yong Ho; Huang, Yonggang; Paik, Ungyu; Rogers, John A

    2016-05-31

    Power supply represents a critical challenge in the development of body-integrated electronic technologies. Although recent research establishes an impressive variety of options in energy storage (batteries and supercapacitors) and generation (triboelectric, piezoelectric, thermoelectric, and photovoltaic devices), the modest electrical performance and/or the absence of soft, biocompatible mechanical properties limit their practical use. The results presented here form the basis of soft, skin-compatible means for efficient photovoltaic generation and high-capacity storage of electrical power using dual-junction, compound semiconductor solar cells and chip-scale, rechargeable lithium-ion batteries, respectively. Miniaturized components, deformable interconnects, optimized array layouts, and dual-composition elastomer substrates, superstrates, and encapsulation layers represent key features. Systematic studies of the materials and mechanics identify optimized designs, including unusual configurations that exploit a folded, multilayer construct to improve the functional density without adversely affecting the soft, stretchable characteristics. System-level examples exploit such technologies in fully wireless sensors for precision skin thermography, with capabilities in continuous data logging and local processing, validated through demonstrations on volunteer subjects in various realistic scenarios.

  8. High power diode pumped solid state lasers

    Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

    1992-01-01

    Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

  9. SiC nanofibers grown by high power microwave plasma chemical vapor deposition

    Honda, Shin-ichi; Baek, Yang-Gyu; Ikuno, Takashi; Kohara, Hidekazu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

    2003-01-01

    Silicon carbide (SiC) nanofibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to β-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C

  10. Radiolytic preparation of thin Au film directly on resin substrate using high-energy electron beam

    Ohkubo, Yuji, E-mail: okubo@upst.eng.osaka-u.ac.jp [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Seino, Satoshi; Nakagawa, Takashi; Kugai, Junichiro [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ueno, Koji [Japan Electron Beam Irradiation Service Ltd., 5-3 Ozushima, Izumiohtsu, Osaka 595-0074 (Japan); Yamamoto, Takao A. [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2016-04-01

    A novel method for preparing thin Au films directly on resin substrates using an electron beam was developed. The thin Au films were prepared on a resin substrate by the reduction of Au ions in an aqueous solution via irradiation with a high-energy electron beam (4.8 MeV). This reduction method required 7 s of the irradiation time of the electron beam. Furthermore, no reductant or catalyst was needed. As the concentration of Au ions in the precursor solution was increased, the amount of Au deposited on the resin substrate increased, too, and the structure of the prepared Au film changed. As a result, the film color changed as well. Cross-sectional scanning electron microscope images of the thus-prepared Au film indicated that the Au films were consisted of two layers: a particle layer and a bottom bulk layer. There was strong adhesion between the Au films and the underlying resin substrates. This was confirmed by the tape-peeling test and through ultrasonic cleaning. After both processes, Au remained on the resin substrates, while most of the particle-like moieties were removed. This indicated that the thin Au films prepared via irradiation with a high-energy electron beam adhered strongly to the resin substrates. - Highlights: • A thin gold (Au) film was formed by EBIRM for the first time. • The irradiation time of the electron beam was less than 10 s. • Thin Au films were obtained without reductant or catalyst. • Au films were consisted of two layers: a particle layer and a bottom bulk layer. • There was strong adhesion between the bottom bulk layer and the underlying resin substrates.

  11. New high power CW klystrons at TED

    Beunas, A; Marchesin, R

    2003-01-01

    Thales Electron Devices (TED) has been awarded a contract by CERN to develop and produce 20 units of the klystrons needed to feed the Large Hadrons Collider (LHC). Each of these delivers 300 kW of CW RF power at 400 MHz. Three klystrons have been delivered to CERN up to now.

  12. A highly linear power amplifier for WLAN

    Jie, Jin; Jia, Shi; Baoli, Ai; Xuguang, Zhang

    2016-02-01

    A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. Project supported by the National Natural Science Foundation of China (No. 61201244) and the Natural Science Fund of SUES (No. E1-0501-14-0168).

  13. High-voltage, high-power architecture considerations

    Moser, R.L.

    1985-01-01

    Three basic EPS architectures, direct energy transfer, peak-power tracking, and a potential EPS architecture for a nuclear reactor are described and compared. Considerations for the power source and energy storage are discussed. Factors to be considered in selecting the operating voltage are pointed out. Other EPS architecture considerations are autonomy, solar array degrees of freedom, and EPS modularity. It was concluded that selection of the power source and energy storage has major impacts on the spacecraft architecture and mass

  14. Modelling aluminium wire bond reliability in high power OMP devices

    Kregting, R.; Yuan, C.A.; Xiao, A.; Bruijn, F. de

    2011-01-01

    In a RF power application such as the OMP, the wires are subjected to high current (because of the high power) and high temperature (because of the heat from IC and joule-heating from the wire itself). Moreover, the wire shape is essential to the RF performance. Hence, the aluminium wire is

  15. GaN-based High Power High Frequency Wide Range LLC Resonant Converter, Phase I

    National Aeronautics and Space Administration — SET Group will design, build and demonstrate a Gallium Nitride (GaN) based High Power High Frequency Wide Range LLC Resonant Converter capable of handling high power...

  16. Power Generation by Zinc Antimonide Thin Film under Various Load Resistances at its Critical Operating Temperature

    Mir Hosseini, Seyed Mojtaba; Rezaniakolaei, Alireza; Rosendahl, Lasse Aistrup

    slightly reduces during unload conditions, although it is expected that by eliminating load in each step, the initial amount of voltage exactly repeats. Similar behavior is observed for Seebeck coefficient distribution versus time of working particularly in lower load resistances. Based on variation...... thin films operating under different load resistances at around its critical operating temperature, 400 ᵒC. The thermoelement is subjected to constant hot side temperature and to room temperature at the cold junction in order to measure the thin film TEG’s sample performance. The nominal loads equal...... to 10, 15, 20, 25, 30, 35, 40, 45… 175, and also 200 Ohms were applied. The results show that the value of the Seebeck coefficient is 0.0002 [V/K] for the specimen, which is in agreement with quantities of other zinc antimonide bulks materials in literature. The results also show that the voltage...

  17. Los Alamos high-power proton linac designs

    Lawrence, G.P. [Los Alamos National Laboratory, NM (United States)

    1995-10-01

    Medium-energy high-power proton linear accelerators have been studied at Los Alamos as drivers for spallation neutron applications requiring large amounts of beam power. Reference designs for such accelerators are discussed, important design factors are reviewed, and issues and concern specific to this unprecedented power regime are discussed.

  18. Preliminary experiments using light-initiated high explosive for driving thin flyer plates

    Benham, R.A.

    1980-02-01

    Light-initiated high explosive, silver acelytide - silver-nitrate (SASN), has been used to produce simulated x ray blow-off impulse loading on reentry vehicles to study the system structural response. SASN can be used to accelerate thin flyer plates to high terminal velocities which, in turn, can deliver a pressure pulse that can be tailored to the target material. This process is important for impulse tests where both structural and material response is desired. The theories used to calculate the dynamic state of the flyer plate prior to impact are summarized. Data from several experiments are presented which indicate that thin flyer plates can be properly accelerated and that there are predictive techniques available which are adequate to calculate the motion of the flyer plate. Recommendations are made for future study that must be undertaken to make the SASN flyer plate technique usable

  19. Alloy-dependent deformation behavior of highly ductile nanocrystalline AuCu thin films

    Lohmiller, Jochen; Spolenak, Ralph; Gruber, Patric A.

    2014-01-01

    Nanocrystalline thin films on compliant substrates become increasingly important for the development of flexible electronic devices. In this study, nanocrystalline AuCu thin films on polyimide substrate were tested in tension while using a synchrotron-based in situ testing technique. Analysis of X-ray diffraction profiles allowed identifying the underlying deformation mechanisms. Initially, elastic and microplastic deformation is observed, followed by dislocation-mediated shear band formation, and eventually macroscopic crack formation. Particularly the influence of alloy composition, heat-treatment, and test temperature were investigated. Generally, a highly ductile behavior is observed. However, high Cu concentrations, annealing, and/or large plastic strains lead to localized deformation and hence reduced ductility. On the other hand, enhanced test temperature allows for a delocalized deformation and extended ductility

  20. Thin-slice high-resolution CT study of pulmonary asbestosis and idiopathic interstitial pneumonia

    Hatakeyama, Masayuki; Maeda, Munehiro; Ohmura, Takuya

    1987-01-01

    Thin-slice high-resolution CT findings were compared between 36 patients with pulmonary asbestos exposure (AS) and 33 patients with idiopathic interstitial pneumonia (IIP). The CT scans of these patients were classified into 5 types (0-IV) by the subpleural curvilinear shadow (SCLS) and honey-comb shadow (HS). SCLS was detected in 22 (62 %) patients with AS and 7 (21 %) with IIP. HS was detected in 14 (39 %) patients with AS and 33 (100 %) with IIP. In both the diseases, SCLS was distributed mainly in the lower lobe in CT types I and II, and in mildly fibrotic segments in types III and IV. In CT types II, III and IV, SCLS was always communicated with HS. Thin-slice high-resolution CT is considered very helpful in diagnosis and staging of not only AS and IIP but also pulmonary fibrosis. (author)

  1. Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

    Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

    2003-01-01

    Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

  2. Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures

    Hezam, M.; Tabet, N.; Mekki, A.

    2010-01-01

    ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.

  3. Alloy-dependent deformation behavior of highly ductile nanocrystalline AuCu thin films

    Lohmiller, Jochen [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany); Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Spolenak, Ralph [Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Gruber, Patric A., E-mail: patric.gruber@kit.edu [Karlsruhe Institute of Technology, Institute for Applied Materials, P.O. Box 3640, 76021 Karlsruhe (Germany)

    2014-02-10

    Nanocrystalline thin films on compliant substrates become increasingly important for the development of flexible electronic devices. In this study, nanocrystalline AuCu thin films on polyimide substrate were tested in tension while using a synchrotron-based in situ testing technique. Analysis of X-ray diffraction profiles allowed identifying the underlying deformation mechanisms. Initially, elastic and microplastic deformation is observed, followed by dislocation-mediated shear band formation, and eventually macroscopic crack formation. Particularly the influence of alloy composition, heat-treatment, and test temperature were investigated. Generally, a highly ductile behavior is observed. However, high Cu concentrations, annealing, and/or large plastic strains lead to localized deformation and hence reduced ductility. On the other hand, enhanced test temperature allows for a delocalized deformation and extended ductility.

  4. High performance sandwich structured Si thin film anodes with LiPON coating

    Luo, Xinyi; Lang, Jialiang; Lv, Shasha; Li, Zhengcao

    2018-04-01

    The sandwich structured silicon thin film anodes with lithium phosphorus oxynitride (LiPON) coating are synthesized via the radio frequency magnetron sputtering method, whereas the thicknesses of both layers are in the nanometer range, i.e. between 50 and 200 nm. In this sandwich structure, the separator simultaneously functions as a flexible substrate, while the LiPON layer is regarded as a protective layer. This sandwich structure combines the advantages of flexible substrate, which can help silicon release the compressive stress, and the LiPON coating, which can provide a stable artificial solidelectrolyte interphase (SEI) film on the electrode. As a result, the silicon anodes are protected well, and the cells exhibit high reversible capacity, excellent cycling stability and good rate capability. All the results demonstrate that this sandwich structure can be a promising option for high performance Si thin film lithium ion batteries.

  5. Performance of a high efficiency high power UHF klystron

    Konrad, G.T.

    1977-03-01

    A 500 kW c-w klystron was designed for the PEP storage ring at SLAC. The tube operates at 353.2 MHz, 62 kV, a microperveance of 0.75, and a gain of approximately 50 dB. Stable operation is required for a VSWR as high as 2 : 1 at any phase angle. The design efficiency is 70%. To obtain this value of efficiency, a second harmonic cavity is used in order to produce a very tightly bunched beam in the output gap. At the present time it is planned to install 12 such klystrons in PEP. A tube with a reduced size collector was operated at 4% duty at 500 kW. An efficiency of 63% was observed. The same tube was operated up to 200 kW c-w for PEP accelerator cavity tests. A full-scale c-w tube reached 500 kW at 65 kV with an efficiency of 55%. In addition to power and phase measurements into a matched load, some data at various load mismatches are presented

  6. Temperature Stabilized Characterization of High Voltage Power Supplies

    Krarup, Ole

    2017-01-01

    High precision measurements of the masses of nuclear ions in the ISOLTRAP experiment relies on an MR-ToF. A major source of noise and drift is the instability of the high voltage power supplies employed. Electrical noise and temperature changes can broaden peaks in time-of-flight spectra and shift the position of peaks between runs. In this report we investigate how the noise and drift of high-voltage power supplies can be characterized. Results indicate that analog power supplies generally have better relative stability than digitally controlled ones, and that the high temperature coefficients of all power supplies merit efforts to stabilize them.

  7. Formation of nanodots and enhancement of thermoelectric power induced by ion irradiation in PbTe:Ag composite thin films

    Bala, Manju, E-mail: manjubala474@gmail.com [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Meena, Ramcharan; Gupta, Srashti; Pannu, Compesh [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Tripathi, Tripurari S. [Aalto University, Värmemansgränden 2, 02150 Espoo (Finland); Varma, Shikha [Institute of Physics, Bhubaneshwar, Odisha 751005 (India); Tripathi, Surya K. [Department of Physics, Panjab University, Chandigarh 160 014 (India); Asokan, K., E-mail: asokaniuac@gmail.com [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Avasthi, Devesh K. [Amity University, Noida 201313, Uttar Pradesh (India)

    2016-07-15

    Present study demonstrates an enhancement in thermoelectric power of 10% Ag doped PbTe (PbTe:Ag) thin films when irradiated with 200 keV Ar ion. X-ray diffraction showed an increase in crystallinity for both PbTe and PbTe:10Ag nano-composite films after Ar ion irradiation due to annealing of defects in the grain boundaries. The preferential sputtering of Pb and Te ions in comparison to Ag ions resulted in the formation of nano-dots. This was further confirmed by X-ray photoelectron spectroscopy (XPS). Such an enhancement in thermoelectric power of irradiated PbTe:10Ag films in comparison to pristine PbTe:10Ag film is attributed to the decrease in charge carrier concentration that takes part in the transport process via restricting the tunneling of carriers through the wider potential barrier formed at the interface of nano-dots.

  8. A validated high performance thin layer chromatography method for determination of yohimbine hydrochloride in pharmaceutical preparations

    Jihan M Badr

    2013-01-01

    Background: Yohimbine is an indole alkaloid used as a promising therapy for erectile dysfunction. A number of methods were reported for the analysis of yohimbine in the bark or in pharmaceutical preparations. Materials and Method: In the present work, a simple and sensitive high performance thin layer chromatographic method is developed for determination of yohimbine (occurring as yohimbine hydrochloride) in pharmaceutical preparations and validated according to International Conference of Ha...

  9. The Effect of Surface Tension on the Gravity-driven Thin Film Flow of Newtonian and Power-law Fluids

    Hu, Bin; Kieweg, Sarah L.

    2012-01-01

    Gravity-driven thin film flow is of importance in many fields, as well as for the design of polymeric drug delivery vehicles, such as anti-HIV topical microbicides. There have been many prior works on gravity-driven thin films. However, the incorporation of surface tension effect has not been well studied for non-Newtonian fluids. After surface tension effect was incorporated into our 2D (i.e. 1D spreading) power-law model, we found that surface tension effect not only impacted the spreading speed of the microbicide gel, but also had an influence on the shape of the 2D spreading profile. We observed a capillary ridge at the front of the fluid bolus. Previous literature shows that the emergence of a capillary ridge is strongly related to the contact line fingering instability. Fingering instabilities during epithelial coating may change the microbicide gel distribution and therefore impact how well it can protect the epithelium. In this study, we focused on the capillary ridge in 2D flow and performed a series of simulations and showed how the capillary ridge height varies with other parameters, such as surface tension coefficient, inclination angle, initial thickness, and power-law parameters. As shown in our results, we found that capillary ridge height increased with higher surface tension, steeper inclination angle, bigger initial thickness, and more Newtonian fluids. This study provides the initial insights of how to optimize the flow and prevent the appearance of a capillary ridge and fingering instability. PMID:23687391

  10. Fusion blankets for high efficiency power cycles

    Powell, J.R.; Fillo, J.A.; Horn, F.L.; Lazareth, O.W.; Usher, J.L.

    1980-04-01

    Definitions are given of 10 generic blanket types and the specific blanket chosen to be analyzed in detail from each of the 10 types. Dimensions, compositions, energy depositions and breeding ratios (where applicable) are presented for each of the 10 designs. Ultimately, based largely on neutronics and thermal hyraulics results, breeding an nonbreeding blanket options are selected for further design analysis and integration with a suitable power conversion subsystem

  11. Preparation and characterization of thin-film Pd–Ag supported membranes for high-temperature applications

    Fernandez Gesalaga, Ekain; Coenen, Kai; Helmi Siasi Farimani, Arash; Melendez, J.; Zuniga, Jon; Pacheco Tanaka, David Alfredo; van Sint Annaland, Martin; Gallucci, Fausto

    2015-01-01

    This paper reports the preparation, characterization and stability tests of thin-film Pd–Ag supported membranes for high-temperature fluidized bed membrane reactor applications. Various thin-film supported membranes have been prepared by simultaneous Pd–Ag electroless plating and have been initially

  12. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  13. Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies

    Lu, Y.; Ziani, A.; Le Paven-Thivet, C.; Benzerga, R.; Le Gendre, L.; Fasquelle, D.; Kassem, H.

    2011-01-01

    Lanthanum titanium oxynitride (LaTiO x N y ) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO x N y thin films deposited on conductive single crystal Nb–STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiO x N y polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO 2 /Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO x N y films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).

  14. Studies on the high electronic energy deposition in polyaniline thin films

    Deshpande, N.G.; Gudage, Y.G.; Vyas, J.C.; Singh, F.; Sharma, Ramphal

    2008-01-01

    We report here the physico-chemical changes brought about by high electronic energy deposition of gold ions in HCl doped polyaniline (PANI) thin films. PANI thin films were synthesized by in situ polymerization technique. The as-synthesized PANI thin films of thickness 160 nm were irradiated using Au 7+ ion of 100 MeV energy at different fluences, namely, 5 x 10 11 ions/cm 2 and 5 x 10 12 ions/cm 2 , respectively. A significant change was seen after irradiation in electrical and photo conductivity, which may be related to increased carrier concentration, and structural modifications in the polymer film. In addition, the high electronic energy deposition showed other effects like cross-linking of polymer chains, bond breaking and creation of defect sites. AFM observations revealed mountainous type features in all (before and after irradiation) PANI samples. The average size (diameter) and density of such mountainous clusters were found to be related with the ion fluence. The AFM profiles also showed change in the surface roughness of the films with respect to irradiation, which is one of the peculiarity of the high electronic energy deposition technique

  15. Structure and magnetic properties of highly textured nanocrystalline Mn–Zn ferrite thin film

    Joseph, Jaison, E-mail: jaisonjosephp@gmail.com [Department of Physics, Goverment College, Khandola, Goa 403107 India (India); Tangsali, R.B. [Department of Physics, Goa University, Taleigao Plateau, Goa 403206 India (India); Pillai, V.P. Mahadevan [Department of Optoelectronics, University of Kerala,Thiruvananthapuram, Kerala 695581 India (India); Choudhary, R.J.; Phase, D.M.; Ganeshan, V. [UGC-DAE-CSR Indore, Madhya Pradesh 452017 India. (India)

    2015-01-01

    Nanoparticles of Mn{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} were chemically synthesized by co-precipitating the metal ions in aqueous solutions in a suitable alkaline medium. The identified XRD peaks confirm single phase spinal formation. The nanoparticle size authentication is carried out from XRD data using Debye Scherrer equation. Thin film fabricated from this nanomaterial by pulse laser deposition technique on quartz substrate was characterized using XRD and Raman spectroscopic techniques. XRD results revealed the formation of high degree of texture in the film. AFM analysis confirms nanogranular morphology and preferred directional growth. A high deposition pressure and the use of a laser plume confined to a small area for transportation of the target species created certain level of porosity in the deposited thin film. Magnetic property measurement of this highly textured nanocrystalline Mn–Zn ferrite thin film revealed enhancement in properties, which are explained on the basis of texture and surface features originated from film growth mechanism.

  16. High-mobility pyrene-based semiconductor for organic thin-film transistors.

    Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

    2013-05-01

    Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

  17. Power affects performance when the pressure is on: evidence for low-power threat and high-power lift.

    Kang, Sonia K; Galinsky, Adam D; Kray, Laura J; Shirako, Aiwa

    2015-05-01

    The current research examines how power affects performance in pressure-filled contexts. We present low-power-threat and high-power-lift effects, whereby performance in high-stakes situations suffers or is enhanced depending on one's power; that is, the power inherent to a situational role can produce effects similar to stereotype threat and lift. Three negotiations experiments demonstrate that role-based power affects outcomes but only when the negotiation is diagnostic of ability and, therefore, pressure-filled. We link these outcomes conceptually to threat and lift effects by showing that (a) role power affects performance more strongly when the negotiation is diagnostic of ability and (b) underperformance disappears when the low-power negotiator has an opportunity to self-affirm. These results suggest that stereotype threat and lift effects may represent a more general phenomenon: When the stakes are raised high, relative power can act as either a toxic brew (stereotype/low-power threat) or a beneficial elixir (stereotype/high-power lift) for performance. © 2015 by the Society for Personality and Social Psychology, Inc.

  18. FY 1999 research and development of technologies for commercialization of photovoltaic power generation systems. Development of technologies for fabrication of thin-film solar cells/materials and substrates (Development of technologies for fabrication of high-quality amorphous materials and substrates); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / zairyo kiban seizo gijutsu kaihatsu (kohinshitsu amorphous kei zairyo kiban no seizo gijutsu kaihatsu)

    NONE

    2000-03-01

    The research and development project is implemented for the amorphous/microcrystalline solar cells with the thin microcrystalline silicon film as the i layer, and the FY 1999 results are reported. The fabrication technologies are investigated for the microcrystalline silicon solar cells of pin or nip structure by RF or VHF plasma CVD using SiH{sub 4} and H{sub 2} as the stock gases. The tests are conducted for evaluating characteristics of the thin microcrystalline silicon film, to investigate the effects of film-making pressure, power and hydrogen dilution rate on the characteristics at a constant film-making temperature of 180 degrees C. The researches on the fabrication technologies for the microcrystalline solar cell of pin structure confirm that use of VHF plasma CVD improves crystallinity, electrical and optical characteristics of the p-type thin microcrystalline silicon film. The researches on the fabrication technologies for the microcrystalline solar cell of nip structure covers transparent substrates, film-making speed of the p layer, power and substrates, and a conversion efficiency of 7.5% is realized by the solar cell formed on a texture substrate. (NEDO)

  19. A Self-Powered and Flexible Organometallic Halide Perovskite Photodetector with Very High Detectivity

    Leung, Siu

    2018-01-10

    Flexible and self-powered photodetectors (PDs) are highly desirable for applications in image sensing, smart building, and optical communications. In this paper, a self-powered and flexible PD based on the methylammonium lead iodide (CH3 NH3 PBI3 ) perovskite is demonstrated. Such a self-powered PD can operate even with irregular motion such as human finger tapping, which enables it to work without a bulky external power source. In addition, with high-quality CH3 NH3 PBI3 perovskite thin film fabricated with solvent engineering, the PD exhibits an impressive detectivity of 1.22 × 1013 Jones. In the self-powered voltage detection mode, it achieves a large responsivity of up to 79.4 V mW-1 cm-2 and a voltage response of up to ≈90%. Moreover, as the PD is made of flexible and transparent polymer films, it can operate under bending and functions at 360 ° of illumination. As a result, the self-powered, flexible, 360 ° omnidirectional perovskite PD, featuring high detectivity and responsivity along with real-world sensing capability, suggests a new direction for next-generation optical communications, sensing, and imaging applications.

  20. A Self-Powered and Flexible Organometallic Halide Perovskite Photodetector with Very High Detectivity.

    Leung, Siu-Fung; Ho, Kang-Ting; Kung, Po-Kai; Hsiao, Vincent K S; Alshareef, Husam N; Wang, Zhong Lin; He, Jr-Hau

    2018-02-01

    Flexible and self-powered photodetectors (PDs) are highly desirable for applications in image sensing, smart building, and optical communications. In this paper, a self-powered and flexible PD based on the methylammonium lead iodide (CH 3 NH 3 PBI 3 ) perovskite is demonstrated. Such a self-powered PD can operate even with irregular motion such as human finger tapping, which enables it to work without a bulky external power source. In addition, with high-quality CH 3 NH 3 PBI 3 perovskite thin film fabricated with solvent engineering, the PD exhibits an impressive detectivity of 1.22 × 10 13 Jones. In the self-powered voltage detection mode, it achieves a large responsivity of up to 79.4 V mW -1 cm -2 and a voltage response of up to ≈90%. Moreover, as the PD is made of flexible and transparent polymer films, it can operate under bending and functions at 360 ° of illumination. As a result, the self-powered, flexible, 360 ° omnidirectional perovskite PD, featuring high detectivity and responsivity along with real-world sensing capability, suggests a new direction for next-generation optical communications, sensing, and imaging applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. A Dynamic Programming based method for optimizing power system restoration with high wind power penetration

    Hu, Rui; Hu, Weihao; Li, Pengfei

    2016-01-01

    and relatively low cost. Thus, many countries are increasing the wind power penetration in their power system step by step, such as Denmark, Spain and Germany. The incremental wind power penetration brings a lot of new issues in operation and programming. The power system sometimes will operate close to its...... stable limits. Once the blackout happens, a well-designed restoration strategy is significant. This paper focuses on how to ameliorate the power system restoration procedures to adapt the high wind power penetration and how to take full advantages of the wind power plants during the restoration....... In this paper, the possibility to exploit the stochastic wind power during restoration was discussed, and a Dynamic Programming (DP) method was proposed to make wind power contribute in the restoration rationally as far as possible. In this paper, the method is tested and verified by a modified IEEE 30 Buses...

  2. High-frequency high-voltage high-power DC-to-DC converters

    Wilson, T. G.; Owen, H. A.; Wilson, P. M.

    1982-09-01

    A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

  3. The effect of aeration and solar intensity power on photocatalytic degradation of textile industrial wastewater using TiO2 thin film

    Abu Kassim, N.F.; Ku Hamid, K.H.; Azizan, A.

    2006-01-01

    Solar photo catalytic degradation of the textile industry wastewater using TiO 2 thin films was studied. This experiment was performed to investigate the effect of aeration and solar intensity power on decreasing of Chemical Oxygen Demand (COD). A serpentine flow photo catalytic reactor was developed for this purpose. TiO 2 thin films photo catalyst supported on the stainless steel 304 substrates were prepared using sol-gel dip coating method. The results of thin films were characterized by Scanning Electron Microscopy (SEM) and X-Ray Diffractometer (XRD). XRD result showed that the prepared thin films gave the anatase crystallite formation whilst SEM demonstrated the macro pores were formed. Finally, the aeration and solar intensity power factors are considered to be responsible for the photo catalytic degradation. (Author)

  4. Ultra-low power, highly uniform polymer memory by inserted multilayer graphene electrode

    Jang, Byung Chul; Kim, Jong Yun; Koo, Beom Jun; Yang, Sang Yoon; Choi, Sung-Yool; Seong, Hyejeong; Im, Sung Gap; Kim, Sung Kyu

    2015-01-01

    Filament type resistive random access memory (RRAM) based on polymer thin films is a promising device for next generation, flexible nonvolatile memory. However, the resistive switching nonuniformity and the high power consumption found in the general filament type RRAM devices present critical issues for practical memory applications. Here, we introduce a novel approach not only to reduce the power consumption but also to improve the resistive switching uniformity in RRAM devices based on poly(1,3,5-trimethyl-3,4,5-trivinyl cyclotrisiloxane) by inserting multilayer graphene (MLG) at the electrode/polymer interface. The resistive switching uniformity was thereby significantly improved, and the power consumption was markedly reduced by 250 times. Furthermore, the inserted MLG film enabled a transition of the resistive switching operation from unipolar resistive switching to bipolar resistive switching and induced self-compliance behavior. The findings of this study can pave the way toward a new area of application for graphene in electronic devices. (paper)

  5. Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

    An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

    2015-03-01

    We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

  6. Sexual aggression when power is new: Effects of acute high power on chronically low-power individuals.

    Williams, Melissa J; Gruenfeld, Deborah H; Guillory, Lucia E

    2017-02-01

    Previous theorists have characterized sexually aggressive behavior as an expression of power, yet evidence that power causes sexual aggression is mixed. We hypothesize that power can indeed create opportunities for sexual aggression-but that it is those who chronically experience low power who will choose to exploit such opportunities. Here, low-power men placed in a high-power role showed the most hostility in response to a denied opportunity with an attractive woman (Studies 1 and 2). Chronically low-power men and women given acute power were the most likely to say they would inappropriately pursue an unrequited workplace attraction (Studies 3 and 4). Finally, having power over an attractive woman increased harassment behavior among men with chronic low, but not high, power (Study 5). People who see themselves as chronically denied power appear to have a stronger desire to feel powerful and are more likely to use sexual aggression toward that end. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

  7. Methodology and measures for preventing unacceptable flow-accelerated corrosion thinning of pipelines and equipment of NPP power generating units

    Tomarov, G. V.; Shipkov, A. A.; Lovchev, V. N.; Gutsev, D. F.

    2016-10-01

    Problems of metal flow-accelerated corrosion (FAC) in the pipelines and equipment of the condensate- feeding and wet-steam paths of NPP power-generating units (PGU) are examined. Goals, objectives, and main principles of the methodology for the implementation of an integrated program of AO Concern Rosenergoatom for the prevention of unacceptable FAC thinning and for increasing operational flow-accelerated corrosion resistance of NPP EaP are worded (further the Program). A role is determined and potentialities are shown for the use of Russian software packages in the evaluation and prediction of FAC rate upon solving practical problems for the timely detection of unacceptable FAC thinning in the elements of pipelines and equipment (EaP) of the secondary circuit of NPP PGU. Information is given concerning the structure, properties, and functions of the software systems for plant personnel support in the monitoring and planning of the inservice inspection of FAC thinning elements of pipelines and equipment of the secondary circuit of NPP PGUs, which are created and implemented at some Russian NPPs equipped with VVER-1000, VVER-440, and BN-600 reactors. It is noted that one of the most important practical results of software packages for supporting NPP personnel concerning the issue of flow-accelerated corrosion consists in revealing elements under a hazard of intense local FAC thinning. Examples are given for successful practice at some Russian NPP concerning the use of software systems for supporting the personnel in early detection of secondary-circuit pipeline elements with FAC thinning close to an unacceptable level. Intermediate results of working on the Program are presented and new tasks set in 2012 as a part of the updated program are denoted. The prospects of the developed methods and tools in the scope of the Program measures at the stages of design and construction of NPP PGU are discussed. The main directions of the work on solving the problems of flow

  8. Treatment of thin stillage in a high-rate anaerobic fluidized bed bioreactor (AFBR).

    Andalib, Mehran; Hafez, Hisham; Elbeshbishy, Elsayed; Nakhla, George; Zhu, Jesse

    2012-10-01

    The primary objective of this work was to investigate the treatability of thin stillage as a by-product of bioethanol production plants using an anaerobic fluidized bed bioreactor (AFBR) employing zeolite with average diameter of (d(m)) of 425-610 μm and specific surface area (SSA) of 26.5m(2)/g as the carrier media. Despite the very high strength of thin stillage with chemical oxygen demand of 130,000 mg TCOD/L and suspended solids of 47,000 mg TSS/L, the AFBR showed up to 88% TCOD and 78% TSS removal at very high organic and solids loading rates (OLR and SLR) of 29 kg COD/m(3)d and 10.5 kg TSS/m(3)d respectively and hydraulic retention time (HRT) of 3.5 days. Methane production rates of up to 160 L/d at the steady state equivalent to 40 L(CH4)/L(thin stillage)d and biogas production rate per reactor volume of 15.8L(gas)/L(reactor)d were achieved. Copyright © 2012 Elsevier Ltd. All rights reserved.

  9. Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

    Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

    2016-05-01

    In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

  10. Preparation and Analysis of Platinum Thin Films for High Temperature Sensor Applications

    Wrbanek, John D.; Laster, Kimala L. H.

    2005-01-01

    A study has been made of platinum thin films for application as high temperature resistive sensors. To support NASA Glenn Research Center s high temperature thin film sensor effort, a magnetron sputtering system was installed recently in the GRC Microsystems Fabrication Clean Room Facility. Several samples of platinum films were prepared using various system parameters to establish run conditions. These films were characterized with the intended application of being used as resistive sensing elements, either for temperature or strain measurement. The resistances of several patterned sensors were monitored to document the effect of changes in parameters of deposition and annealing. The parameters were optimized for uniformity and intrinsic strain. The evaporation of platinum via oxidation during annealing over 900 C was documented, and a model for the process developed. The film adhesion was explored on films annealed to 1000 C with various bondcoats on fused quartz and alumina. From this compiled data, a list of optimal parameters and characteristics determined for patterned platinum thin films is given.

  11. A comparison of light-coupling into high and low index nanostructured photovoltaic thin films

    T. Pfadler

    2015-06-01

    Full Text Available Periodically structured electrodes are typically introduced to thin-film photovoltaics for the purpose of light management. Highly effective light-trapping and optimal in-coupling of light is crucial to enhance the overall device performance in such thin-film systems. Here, wavelength-scale structures are transferred via direct laser interference patterning to electron-selective TiO2 electrodes. Two representative thin-film solar cell architectures are deposited on top: an organic solar cell featuring blended P3HT:PCBM as active material, and a hybrid solar cell with Sb2S3 as inorganic active material. A direct correlation in the asymmetry in total absorption enhancement and in structure-induced light in-coupling is spectroscopically observed for the two systems. The structuring is shown to be beneficial for the total absorption enhancement if a high n active material is deposited on TiO2, but detrimental for a low n material. The refractive indices of the employed materials are determined via spectroscopic ellipsometry. The study outlines that the macroscopic Fresnel equations can be used to investigate the spectroscopically observed asymmetry in light in-coupling at the nanostructured TiO2 active material interfaces by visualizing the difference in reflectivity caused by the asymmetry in refractive indices.

  12. High performance magnet power supply optimization

    Jackson, L.T.

    1988-01-01

    The power supply system for the joint LBL--SLAC proposed accelerator PEP provides the opportunity to take a fresh look at the current techniques employed for controlling large amounts of dc power and the possibility of using a new one. A basic requirement of +- 100 ppM regulation is placed on the guide field of the bending magnets and quadrupoles placed around the 2200 meter circumference of the accelerator. The optimization questions to be answered by this paper are threefold: Can a firing circuit be designed to reduce the combined effects of the harmonics and line voltage combined effects of the harmonics and line voltage unbalance to less than 100 ppM in the magnet field. Given the ambiguity of the previous statement, is the addition of a transistor bank to a nominal SCR controlled system the way to go or should one opt for an SCR chopper system running at 1 KHz where multiple supplies are fed from one large dc bus and the cost--performance evaluation of the three possible systems

  13. Low reflectance high power RF load

    Ives, R. Lawrence; Mizuhara, Yosuke M.

    2016-02-02

    A load for traveling microwave energy has an absorptive volume defined by cylindrical body enclosed by a first end cap and a second end cap. The first end cap has an aperture for the passage of an input waveguide with a rotating part that is coupled to a reflective mirror. The inner surfaces of the absorptive volume consist of a resistive material or are coated with a coating which absorbs a fraction of incident RF energy, and the remainder of the RF energy reflects. The angle of the reflector and end caps is selected such that reflected RF energy dissipates an increasing percentage of the remaining RF energy at each reflection, and the reflected RF energy which returns to the rotating mirror is directed to the back surface of the rotating reflector, and is not coupled to the input waveguide. Additionally, the reflector may have a surface which generates a more uniform power distribution function axially and laterally, to increase the power handling capability of the RF load. The input waveguide may be corrugated for HE11 mode input energy.

  14. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

    Imas Noviyana

    2017-06-01

    Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

  15. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  16. Transparent, high mobility InGaZnO thin films deposited by PLD

    Suresh, Arun; Gollakota, Praveen; Wellenius, Patrick; Dhawan, Anuj; Muth, John F.

    2008-01-01

    Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 10 19 carriers/cm 3 depending on the oxygen partial pressure during deposition. Hall mobilities as high as 16 cm 2 /V s were observed. This is approximately an order of magnitude higher than the mobility of amorphous silicon and indicates that InGaO 3 (ZnO) x with x ≤ 5 may be suitable for transparent, thin film transistor applications. Post-deposition annealing was found to strongly influence the carrier concentration while annealing effects on the electron mobility was less influential

  17. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  18. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  19. In-volume heating using high-power laser diodes

    Denisenkov, V.S.; Kiyko, V.V.; Vdovin, G.V.

    2015-01-01

    High-power lasers are useful instruments suitable for applications in various fields; the most common industrial applications include cutting and welding. We propose a new application of high-power laser diodes as in-bulk heating source for food industry. Current heating processes use surface

  20. High-power sputtering employed for film deposition

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  1. Active Snubber Circuit for High Power Inverter Leg

    Rasmussen, Tonny Wederberg; Johansen, Morten Holst

    2009-01-01

    Abstract— High power converters in the conventional 6 pulse configuration with 6 switching elements IGBTs (Insulated Gate Bipolar Transistor) are pushed to the limit of power. Especially the switching loss is high. This reduces the switching frequency due to cooling problems. Passive snubber circ...

  2. Improved cutting performance in high power laser cutting

    Olsen, Flemming Ove

    2003-01-01

    Recent results in high power laser cutting especially with focus on cutting of mild grade steel types for shipbuilding are described.......Recent results in high power laser cutting especially with focus on cutting of mild grade steel types for shipbuilding are described....

  3. Theoretical analysis of thermoelectric power of nanocrystalline ReSi2 thin film

    Kchoudhary, K; Kaurav; Gupta, N; Varshney, D

    2007-01-01

    The formulation is developed for the predictive modeling of thermoelectric power (S) of nano-crystalline ReSi 2 . We have evaluated the phonon thermoelectric power by incorporating the scattering of phonons with impurities, grain boundaries, charge careers and phonons. It is noticed that at low temperatures (T < 400 K), S increases and show power temperature dependence because of the larger mean free path of phonon, S shows a broad peak at about 550 K, which is artefact of the competition among umklapp scattering and grain boundaries scattering. Further, by increasing temperature S decreases with change in slope. The anomalies are well accounted in terms of interaction among the phonons-impurity, phonon grain boundaries and the umklapp scattering. Under certain conditions grain boundary scattering is expected to be more effective on heat carrying phonons than on Umklapp scattering, causing an increased thermoelectric power. Numerical analysis of thermoelectric power from the present model shows similar results as those revealed from experiments

  4. High-power microwave diplexers for advanced ECRH systems

    Kasparek, W.; Petelin, M.; Erckmann, V.; Bruschi, A.; Noke, F.; Purps, F.; Hollmann, F.; Koshurinov, Y.; Lubyako, L.; Plaum, B.; Wubie, W.

    2009-01-01

    In electron cyclotron resonance heating systems, high-power multiplexers can be employed as power combiners, adjustable power dividers, fast switches to toggle the power between two launchers, as well as frequency sensitive directional couplers to combine heating and diagnostic applications on one launcher. In the paper, various diplexer designs for quasi-optical and corrugated waveguide transmission systems are discussed. Numerical calculations, low-power tests and especially high-power experiments performed at the ECRH system of W7-X are shown, which demonstrate the capability of these devices. Near term plans for applications on ASDEX Upgrade and FTU are presented. Based on the present results, options for implementation of power combiners and fast switches in the ECRH system of ITER is discussed.

  5. High Average Power Fiber Laser for Satellite Communications, Phase I

    National Aeronautics and Space Administration — Very high average power lasers with high electrical-top-optical (E-O) efficiency, which also support pulse position modulation (PPM) formats in the MHz-data rate...

  6. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  7. High Performance Auxiliary Power Unit Technology Demonstrator.

    1980-12-01

    aft bearings 1.13 P3 - Power producer CDP 1.14 DPHE - Lube pressure drop at heat exchanger 1.15 POFP - Load airflow orifice pressure 1.16 DPOFP - Load...P𔃽I -PSI G PEBL -PSIG P2 -PS.IG DPHE -PID POFP -F Iu 0. 022±_ 77. 3478 6o5. 6 4±4 ±8L-. 4852 19. 51-17.4 DPOFP -PSID Ni -,. N2-i -RPM NSATM -FPM...28. 0250 83. 3505 29. 861 1:9. 7680 PGi -PSIG PEBL -PSIG P3 -PSIG DPHE -PSID POFP -PSIG 0. 0100 77. 9199 72.4862 17. 25 ±19. 4122 1= DPOFP -PSID NI

  8. High Efficiency, High Temperature Foam Core Heat Exchanger for Fission Surface Power Systems, Phase II

    National Aeronautics and Space Administration — Fission-based power systems with power levels of 30 to ≥100 kWe will be needed for planetary surface bases. Development of high temperature, high efficiency heat...

  9. Design and development of power supplies for high power IOT based RF amplifier

    Kumar, Yashwant; Kumari, S.; Ghosh, M.K.; Bera, A.; Sadhukhan, A.; Pal, S.S.; Khare, V.K.; Tiwari, T.P.; Thakur, S.K.; Saha, S.

    2013-01-01

    Design, development, circuit topology, function of system components and key system specifications of different power supplies for biasing electrodes of Thales Inductive Output Tube (IOT) based high power RF amplifier are presented in this paper. A high voltage power supply (-30 kV, 3.2A dc) with fast (∼microsecond) crowbar protection circuit is designed, developed and commissioned at VECC for testing the complete setup. Other power supplies for biasing grid electrode (300V, 0.5A dc) and Ion Pump (3 kV, 0.1mA dc) of IOT are also designed, developed and tested with actual load. A HV Deck (60kV Isolation) is specially designed in house to place these power supplies which are floating at 30 kV. All these power supplies are powered by an Isolation Transformer (5 kVA, 60 kV isolation) designed and developed in VECC. (author)

  10. Design of The High Efficiency Power Factor Correction Circuit for Power Supply

    Atiye Hülya OBDAN

    2017-12-01

    Full Text Available Designing power factor correction circuits for switched power supplies has become important in recent years in terms of efficient use of energy. Power factor correction techniques play a significant role in high power density and energy efficiency. For these purposes, bridgeless PFC topologies and control strategies have been developed alongside basic boost PFC circuits. The power density can be increased using bridgeless structures by means of reducing losses in the circuit. This article examines bridgeless PFC structures and compares their performances in terms of losses and power factor. A semi-bridgeless PFC, which is widely used at high power levels, was analyzed and simulated. The designed circuit simulation using the current mode control method was performed in the PSIM program. A prototype of a 900 W semi-bridgeless PFC circuit was implemented and the results obtained from the circuit are presented

  11. Cascade: a high-efficiency ICF power reactor

    Pitts, J.H.

    1985-01-01

    Cascade attains a net power-plant efficiency of 49% and its cost is competitive with high-temperature gas-cooled reactor, pressurized-water reactor, and coal-fired power plants. The Cascade reactor and blanket are made of ceramic materials and activation is 6 times less than that of the MARS Tandem Mirror Reactor operating at comparable power. Hands-on maintenance of the heat exchangers is possible one day after shutdown. Essentially all tritium is recovered in the vacuum system, with the remainder recovered from the helium power conversion loop. Tritium leakage external to the vacuum system and power conversion loop is only 0.03 Ci/d

  12. On the Ongoing Evolution of Very High Frequency Power Supplies

    Knott, Arnold; Andersen, Toke Meyer; Kamby, Peter

    2013-01-01

    The ongoing demand for smaller and lighter power supplies is driving the motivation to increase the switching frequencies of power converters. Drastic increases however come along with new challenges, namely the increase of switching losses in all components. The application of power circuits used...... in radio frequency transmission equipment helps to overcome those. However those circuits were not designed to meet the same requirements as power converters. This paper summarizes the contributions in recent years in application of very high frequency (VHF) technologies in power electronics, describes...

  13. Eighth CW and High Average Power RF Workshop

    2014-01-01

    We are pleased to announce the next Continuous Wave and High Average RF Power Workshop, CWRF2014, to take place at Hotel NH Trieste, Trieste, Italy from 13 to 16 May, 2014. This is the eighth in the CWRF workshop series and will be hosted by Elettra - Sincrotrone Trieste S.C.p.A. (www.elettra.eu). CWRF2014 will provide an opportunity for designers and users of CW and high average power RF systems to meet and interact in a convivial environment to share experiences and ideas on applications which utilize high-power klystrons, gridded tubes, combined solid-state architectures, high-voltage power supplies, high-voltage modulators, high-power combiners, circulators, cavities, power couplers and tuners. New ideas for high-power RF system upgrades and novel ways of RF power generation and distribution will also be discussed. CWRF2014 sessions will start on Tuesday morning and will conclude on Friday lunchtime. A visit to Elettra and FERMI will be organized during the workshop. ORGANIZING COMMITTEE (OC): Al...

  14. New high-gain thin-gap detector for the OPAL hadron calorimeter

    Dado, S; Goldberg, J; Lupu, N; Mincer, A I; Alexander, G; Bella, G; Gnat, Y; Grunhaus, J; Levy, A; Cohen, J

    1986-12-01

    A new type of thin-gap multiwire gas detector operating in a high-gain mode was developed for use in the OPAL pole-tip calorimeter. The detector thickness is only 6.6 mm and its area is 0.61 m/sup 2/. The induced pad readout provides high output pulses that require no amplification. The setup for the detector mass production and quality-control test is described. Results from a test beam setup that simulates the OPAL pole-tip calorimeter are presented and compared with computer simulations.

  15. New high gain thin gap detector for the OPAL hadron calorimeter

    Dado, S; Goldberg, J; Lupu, N; Mincer, A I; Alexander, G; Bella, G; Gnat, Y; Grunhaus, J; Levy, A; Cohen, J

    1986-12-01

    A new type of thin gap multiwire gas detector operating in a high gain mode has been developed for use in the OPAL pole tip calorimeter. The detector thickness is only 6.6 mm and its area is 0.61 m/sup 2/. The induced pad readout provides high output pulses which require no amplification. The set-up for the detector mass production and quality control test is described. Results from a test beam set-up that simulates the OPAL pole tip calorimeter are presented and compared with computer simulations.

  16. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  17. Technical Design of Flexible Thin-Film Solar Heating Clothes with Switchable Output Power

    Zhao Yu Xiao

    2016-01-01

    Full Text Available This research focuses on the research and development of thermal clothes through technical design, by adopting unique removable electronic equipment and applying carbon fiber material to thermal clothes against cold, so as to meet the requirements of active heating and passive warmth retention. Firstly, the specification of power supply system was determined in accordance with the requirements of power system, and the specification of charging system was determined according to the specification of power system. Then circuit system was designed and tested. Fianlly, the electronic device was configured on the clothes appropriately, so that it should be conforms to ergonomic principles, convenient and fast.

  18. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  19. Overview on the high power excimer laser technology

    Liu, Jingru

    2013-05-01

    High power excimer laser has essential applications in the fields of high energy density physics, inertial fusion energy and industry owing to its advantages such as short wavelength, high gain, wide bandwidth, energy scalable and repetition operating ability. This overview is aimed at an introduction and evaluation of enormous endeavor of the international high power excimer laser community in the last 30 years. The main technologies of high power excimer laser are reviewed, which include the pumping source technology, angular multiplexing and pulse compressing, beam-smoothing and homogenous irradiation, high efficiency and repetitive operation et al. A high power XeCl laser system developed in NINT of China is described in detail.

  20. The research on high power transducer

    Zhao Wuling; Li Yubin; Peng Shuwen

    2014-01-01

    This paper introduces the transducer structure used double PWM mode, the control system design of hardware and software. The transducer has been applied in factory. From the real experiment, it shows that the system has a high reliability. (authors)

  1. A high-power target experiment

    Kirk, H G; Ludewig, H; Palmer, Robert; Samulyak, V; Simos, N; Tsang, Thomas; Bradshaw, T W; Drumm, Paul V; Edgecock, T R; Ivanyushenkov, Yury; Bennett, Roger; Efthymiopoulos, Ilias; Fabich, Adrian; Haseroth, H; Haug, F; Lettry, Jacques; Hayato, Y; Yoshimura, Koji; Gabriel, Tony A; Graves, Van; Spampinato, P; Haines, John; McDonald, Kirk T

    2005-01-01

    We describe an experiment designed as a proof-of-principle test for a target system capable of converting a 4 MW proton beam into a high-intensity muon beam suitable for incorporation into either a neutrino factory complex or a muon collider. The target system is based on exposing a free mercury jet to an intense proton beam in the presence of a high strength solenoidal field.

  2. Stabilized High Power Laser for Advanced Gravitational Wave Detectors

    Willke, B; Danzmann, K; Fallnich, C; Frede, M; Heurs, M; King, P; Kracht, D; Kwee, P; Savage, R; Seifert, F; Wilhelm, R

    2006-01-01

    Second generation gravitational wave detectors require high power lasers with several 100W of output power and with very low temporal and spatial fluctuations. In this paper we discuss possible setups to achieve high laser power and describe a 200W prestabilized laser system (PSL). The PSL noise requirements for advanced gravitational wave detectors will be discussed in general and the stabilization scheme proposed for the Advanced LIGO PSL will be described. Special emphasis will be given to the most demanding power stabilization requirements and new results (RIN ≤ 4x10 -9 /√Hz) will be presented

  3. Power Constrained High-Level Synthesis of Battery Powered Digital Systems

    Nielsen, Sune Fallgaard; Madsen, Jan

    2003-01-01

    We present a high-level synthesis algorithm solving the combined scheduling, allocation and binding problem minimizing area under both latency and maximum power per clock-cycle constraints. Our approach eliminates the large power spikes, resulting in an increased battery lifetime, a property...... of utmost importance for battery powered embedded systems. Our approach extends the partial-clique partitioning algorithm by introducing power awareness through a heuristic algorithm which bounds the design space to those of power feasible schedules. We have applied our algorithm on a set of dataflow graphs...

  4. Experiments on high power EB evaporation of niobium

    Kandaswamy, E.; Bhardwaj, R.L.; Ram Gopal; Ray, A.K.; Kulgod, S.V.

    2002-01-01

    Full text: The versatility of electron beam evaporation makes the deposition of many new and unusual materials possible. This technique offers freedom from contamination and precise control. High power electron guns are especially used for obtaining high evaporation rates for large area coatings. This paper deals with the coating experiments carried out on an indigenously developed high power strip electron gun with niobium as evaporant at 40 kW on S.S. substrate. The practical problems of conditioning the gun and venting the vacuum system after the high power operation are also discussed. The coating rate was calculated by weight difference method

  5. High power industrial picosecond laser from IR to UV

    Saby, Julien; Sangla, Damien; Pierrot, Simonette; Deslandes, Pierre; Salin, François

    2013-02-01

    Many industrial applications such as glass cutting, ceramic micro-machining or photovoltaic processes require high average and high peak power Picosecond pulses. The main limitation for the expansion of the picosecond market is the cost of high power picosecond laser sources, which is due to the complexity of the architecture used for picosecond pulse amplification, and the difficulty to keep an excellent beam quality at high average power. Amplification with fibers is a good technology to achieve high power in picosecond regime but, because of its tight confinement over long distances, light undergoes dramatic non linearities while propagating in fibers. One way to avoid strong non linearities is to increase fiber's mode area. Nineteen missing holes fibers offering core diameter larger than 80μm have been used over the past few years [1-3] but it has been shown that mode instabilities occur at approximately 100W average output power in these fibers [4]. Recently a new fiber design has been introduced, in which HOMs are delocalized from the core to the clad, preventing from HOMs amplification [5]. In these so-called Large Pitch Fibers, threshold for mode instabilities is increased to 294W offering robust single-mode operation below this power level [6]. We have demonstrated a high power-high efficiency industrial picosecond source using single-mode Large Pitch rod-type fibers doped with Ytterbium. Large Pitch Rod type fibers can offer a unique combination of single-mode output with a very large mode area from 40 μm up to 100μm and very high gain. This enables to directly amplify a low power-low energy Mode Locked Fiber laser with a simple amplification architecture, achieving very high power together with singlemode output independent of power level or repetition rate.

  6. Comparison between bulk and thin foil ion irradiation of ultra high purity Fe

    Prokhodtseva, A., E-mail: anna.prokhodtseva@psi.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherches en Physique des Plasmas, Association Euratom-Confédération Suisse, 5232 Villigen PSI (Switzerland); Décamps, B. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), CNRS-IN2P3-Univ. Paris-Sud 11, UMR 8609, Bât. 108, 91405 Orsay (France); Schäublin, R. [Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherches en Physique des Plasmas, Association Euratom-Confédération Suisse, 5232 Villigen PSI (Switzerland)

    2013-11-15

    Accumulation of radiation damage in ultra high purity iron under self ion irradiation without and with simultaneous He implantation was investigated in bulk and thin foil form to assess, on the one hand, the effect of free surfaces and, on the other hand, the influence of He. Specimens were irradiated at room temperature to a dose of 0.8 dpa and ∼900 appm He content. We found in thin foils after irradiation with single beam a majority of a{sub 0} 〈1 0 0〉 type loops, while in the presence of He it is the ½ a{sub 0} 〈1 1 1〉 type loops that prevail. In single beam irradiated bulk samples most of the loops are of ½ a{sub 0} 〈1 1 1〉 type. In both bulk and thin foils density of defects visible in transmission electron microscope is considerably higher when He is implanted with prevailing ½ a{sub 0} 〈1 1 1〉 dislocation loops, indicating that He stabilizes them.

  7. INTACS before or after laser in situ keratomileusis: correction of thin corneas with moderately high myopia.

    Ito, Mitsutoshi; Arai, Hiroyuki; Fukumoto, Teruki; Toda, Ikuko; Tsubota, Kazuo

    2004-01-01

    Intrastromal corneal ring segments (INTACS Micro-Thin Prescription Inserts by Addition Technologies, Fremont, Calif) were inserted as a combined surgery with laser in situ keratomileusis (LASIK) in six eyes with thin corneas to correct moderately high myopia. INTACS were implanted before LASIK (INTACS-LASIK) in three eyes and after LASIK (LASIK-INTACS) in three eyes. Mean preoperative manifest spherical equivalent refraction was -7.88 diopters. Mean follow-up was 306 days. No intraoperative complications occurred. The LASIK-INTACS eyes were slightly more overcorrected than the INTACS-LASIK eyes because of the enhanced performance of INTACS in the thinned corneal tissue. Induced astigmatism by INTACS per se was less in the LASIK-INTACS eyes than in the INTACS-LASIK eyes. At last examination, uncorrected visual acuity was better than 20/25 in all eyes. Best spectacle-corrected visual acuity was within 1 line of the preoperative value in all eyes. Both methods resulted in significant improvement in visual acuity and refraction. Based on our limited experience, however, LASIK followed by INTACS is preferred for reasons of safety, convenience, and lower induced cylinder.

  8. The origin of local strain in highly epitaxial oxide thin films.

    Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

    2013-10-31

    The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

  9. Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

    Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

    2014-10-27

    We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

  10. Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

    Martini, R.; Kepa, J.; Stesmans, A.; Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I.; Poortmans, J.

    2014-01-01

    We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

  11. High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

    Yang, Zhenqian

    2018-01-10

    The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.

  12. Application of parallel connected power-MOSFET elements to high current d.c. power supply

    Matsukawa, Tatsuya; Shioyama, Masanori; Shimada, Katsuhiro; Takaku, Taku; Neumeyer, Charles; Tsuji-Iio, Shunji; Shimada, Ryuichi

    2001-01-01

    The low aspect ratio spherical torus (ST), which has single turn toroidal field coil, requires the extremely high d.c. current like as 20 MA to energize the coil. Considering the ratings of such extremely high current and low voltage, power-MOSFET element is employed as the switching device for the a.c./d.c. converter of power supply. One of the advantages of power-MOSFET element is low on-state resistance, which is to meet the high current and low voltage operation. Recently, the capacity of power-MOSFET element has been increased and its on-state resistance has been decreased, so that the possibility of construction of high current and low voltage a.c./d.c. converter with parallel connected power-MOSFET elements has been growing. With the aim of developing the high current d.c. power supply using power-MOSFET, the basic characteristics of parallel operation with power-MOSFET elements are experimentally investigated. And, the synchronous rectifier type and the bi-directional self commutated type a.c./d.c. converters using parallel connected power-MOSFET elements are proposed

  13. Simulation of Oscillations in High Power Klystrons

    Ko, K

    2003-01-01

    Spurious oscillations can seriously limit a klystron's performance from reaching its design specifications. These are modes with frequencies different from the drive frequency, and have been found to be localized in various regions of the tube. If left unsuppressed, such oscillations can be driven to large amplitudes by the beam. As a result, the main output signal may suffer from amplitude and phase instabilities which lead to pulse shortening or reduction in power generation efficiency, as observed during the testing of the first 150MW S-band klystron, which was designed and built at SLAC as a part of an international collaboration with DESY. We present efficient methods to identify suspicious modes and then test their possibility of oscillation. In difference to [3], where each beam-loaded quality-factor Qbl was calculated by time-consuming PIC simulations, now only tracking-simulations with much reduced cpu-time and less sensitivity against noise are applied. This enables the determination of Qbl for larg...

  14. High cost of nuclear power plants

    Bassett, C.

    1978-01-01

    Retroactive safety standards were found to account for over half the costs of a nuclear power plant and point up the need for an effective cost-benefit analysis of changes made by the Nuclear Regulatory Commission after construction has started. The author compared the Davis-Besse Unit No. 1 construction-cost estimates with the final-cost increases during a rate-case investigation in Ohio. He presents data furnished for ten of the largest construction contracts to illustrate the cost increases involving fixed hardware and intensive labor. The situation was found to repeat with other utilities across the country even though safeguards against irresponsible low bidding were introduced. Low bidding was found to continue, encouraged by the need for retrofitting to meet regulation changes. The average cost per kilowatt of major light-water reactors is shown to have increased from $171 in 1970 to $555 in 1977, while construction duration increased from 43.4 to 95.6 months during the same period

  15. Characterization and modeling of a highly-oriented thin film for composite forming

    White, K. D.; Sherwood, J. A.

    2018-05-01

    Ultra High Molecular Weight Polyethylene (UHMWPE) materials exhibit high impact strength, excellent abrasion resistance and high chemical resistance, making them attractive for a number of impact applications for automotive, marine and medical industries. One format of this class of materials that is being considered for the thermoforming process is a highly-oriented extruded thin film. Parts are made using a two-step manufacturing process that involves first producing a set of preforms and then consolidating these preforms into a final shaped part. To assist in the design of the processing parameters, simulations of the preforming and compression molding steps can be completed using the finite element method. Such simulations require material input data as developed through a comprehensive characterization test program, e.g. shear, tensile and bending, over the range of potential processing temperatures. The current research investigates the challenges associated with the characterization of thin, highly-oriented UHMWPE films. Variations in grip type, sample size and testing rates are explored to achieve convergence of the characterization data. Material characterization results are then used in finite element simulations of the tension test to explore element formulations that work well with the mechanical behavior. Comparisons of the results from the material characterization tests to results of simulations of the same test are performed to validate the finite element method parameters and the credibility of the user-defined material model.

  16. High power and high energy electrodes using carbon nanotubes

    Martini, Fabrizio; Brambilla, Nicolo Michele; Signorelli, Riccardo

    2015-04-07

    An electrode useful in an energy storage system, such as a capacitor, includes an electrode that includes at least one to a plurality of layers of compressed carbon nanotube aggregate. Methods of fabrication are provided. The resulting electrode exhibits superior electrical performance in terms of gravimetric and volumetric power density.

  17. High Performance Nano-Constituent Buffer Layer Thin Films to Enable Low Cost Integrated On-the-Move Communications Systems

    Cole, M. W; Nothwang, W. D; Hubbard, C; Ngo, E; Hirsch, S

    2004-01-01

    Successful integration of paraelectric Ba1-xSrxTiO3 (BST) based thin films with affordable Si substrates has a potential significant commercial impact as the demand for high-frequency tunable devices intensifies...

  18. Pulsed EM Field Response of a Thin, High-Contrast, Finely Layered Structure With Dielectric and Conductive Properties

    De Hoop, A.T.; Jiang, L.

    2009-01-01

    The response of a thin, high-contrast, finely layered structure with dielectric and conductive properties to an incident, pulsed, electromagnetic field is investigated theoretically. The fine layering causes the standard spatial discretization techniques to solve Maxwell's equations numerically to

  19. High Performance Nano-Constituent Buffer Layer Thin Films to Enable Low Cost Integrated On-the-Move Communications Systems

    Cole, M. W; Nothwang, W. D; Hubbard, C; Ngo, E; Hirsch, S

    2004-01-01

    .... Utilizing a coplanar device design we successfully designed, fabricated, characterized, and optimized a high performance Ta2O5 thin film passive buffer layer on Si substrates, which will allow...

  20. PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor

    Khairnar, A. G., E-mail: agkhairnar@gmail.com; Patil, V. S.; Agrawal, K. S.; Salunke, R. S.; Mahajan, A. M., E-mail: ammahajan@nmu.ac.in [North Maharashtra University, Department of Electronics, School of Physical Sciences (India)

    2017-01-15

    The study of ZrO{sub 2} thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO{sub 2} thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO{sub 2} thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°Ð¡. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.