WorldWideScience

Sample records for high power amplifiers

  1. HIGH AVERAGE POWER OPTICAL FEL AMPLIFIERS

    International Nuclear Information System (INIS)

    2005-01-01

    Historically, the first demonstration of the optical FEL was in an amplifier configuration at Stanford University [l]. There were other notable instances of amplifying a seed laser, such as the LLNL PALADIN amplifier [2] and the BNL ATF High-Gain Harmonic Generation FEL [3]. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance FEL's with average power of 100 kW or more. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting Energy Recovery Linacs (ERL) combine well with the high-gain FEL amplifier to produce unprecedented average power FELs. This combination has a number of advantages. In particular, we show that for a given FEL power, an FEL amplifier can introduce lower energy spread in the beam as compared to a traditional oscillator. This properly gives the ERL based FEL amplifier a great wall-plug to optical power efficiency advantage. The optics for an amplifier is simple and compact. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Linac which is under construction at Brookhaven National Laboratory's Collider-Accelerator Department

  2. Advances in high-power rf amplifiers

    International Nuclear Information System (INIS)

    Tallerico, P.J.

    1979-01-01

    Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems

  3. Series-Tuned High Efficiency RF-Power Amplifiers

    DEFF Research Database (Denmark)

    Vidkjær, Jens

    2008-01-01

    An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.......An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits....

  4. A highly linear power amplifier for WLAN

    International Nuclear Information System (INIS)

    Jin Jie; Shi Jia; Ai Baoli; Zhang Xuguang

    2016-01-01

    A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P 1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. (paper)

  5. Cryogenic cooling for high power laser amplifiers

    Directory of Open Access Journals (Sweden)

    Perin J.P.

    2013-11-01

    Full Text Available Using DPSSL (Diode Pumped Solid State Lasers as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz. The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K–170 K with a heat flux of 1 MW*m−2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser.

  6. A highly linear power amplifier for WLAN

    Science.gov (United States)

    Jie, Jin; Jia, Shi; Baoli, Ai; Xuguang, Zhang

    2016-02-01

    A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. Project supported by the National Natural Science Foundation of China (No. 61201244) and the Natural Science Fund of SUES (No. E1-0501-14-0168).

  7. A high-power compact regenerative amplifier FEL

    International Nuclear Information System (INIS)

    Nguyen, D.C.; Sheffield, R.L.; Fortgang, C.M.; Kinross-Wright, J.M.; Ebrahim, N.A.; Goldstein, J.C.

    1997-01-01

    The Regenerative Amplifier FEL (RAFEL) is a new FEL approach aimed at achieving the highest optical power from a compact rf-linac FEL. The key idea is to feed back a small fraction ( 5 in single pass) wiggler to enable the FEL to reach saturation in a few passes. This paper summarizes the design of a high-power compact regenerative amplifier FEL and describes the first experimental demonstration of the RAFEL concept

  8. High power klystrons for efficient reliable high power amplifiers

    Science.gov (United States)

    Levin, M.

    1980-11-01

    This report covers the design of reliable high efficiency, high power klystrons which may be used in both existing and proposed troposcatter radio systems. High Power (10 kW) klystron designs were generated in C-band (4.4 GHz to 5.0 GHz), S-band (2.5 GHz to 2.7 GHz), and L-band or UHF frequencies (755 MHz to 985 MHz). The tubes were designed for power supply compatibility and use with a vapor/liquid phase heat exchanger. Four (4) S-band tubes were developed in the course of this program along with two (2) matching focusing solenoids and two (2) heat exchangers. These tubes use five (5) tuners with counters which are attached to the focusing solenoids. A reliability mathematical model of the tube and heat exchanger system was also generated.

  9. Gyrocon: a deflection-modulated, high-power microwave amplifier

    International Nuclear Information System (INIS)

    Tallerico, P.J.

    1977-10-01

    A large-signal, relativistic theory of the electron-field interaction in a new class of microwave amplifiers is presented and applied to the analysis of a high-power, 450-MHz amplifier for accelerator applications. The analysis indicates that electronic efficiencies in excess of 90 percent are obtainable and that overall efficiencies of 90 percent are possible. The amplifier is unique in several respects; the electron velocity is perpendicular to the circuit energy flow, the device uses a fast-wave circuit, and the electron beam is deflection modulated

  10. Embedded control system for high power RF amplifiers

    International Nuclear Information System (INIS)

    Sharma, Deepak Kumar; Gupta, Alok Kumar; Jain, Akhilesh; Hannurkar, P.R.

    2011-01-01

    RF power devices are usually very sensitive to overheat and reflected RF power; hence a protective interlock system is required to be embedded with high power solid state RF amplifiers. The solid state RF amplifiers have salient features of graceful degradation and very low mean time to repair (MTTR). In order to exploit these features in favour of lowest system downtime, a real-time control system is embedded with high power RF amplifiers. The control system is developed with the features of monitoring, measurement and network publishing of various parameters, historical data logging, alarm generation, displaying data to the operator and tripping the system in case of any interlock failure. This paper discusses the design philosophy, features, functions and implementation details of the embedded control system. (author)

  11. High power pulsed sources based on fiber amplifiers

    Science.gov (United States)

    Canat, Guillaume; Jaouën, Yves; Mollier, Jean-Claude; Bouzinac, Jean-Pierre; Cariou, Jean-Pierre

    2017-11-01

    Cladding-pumped rare-earth-doped fiber laser technologies are currently among the best sources for high power applications. Theses extremely compact and robust sources appoint them as good candidate for aeronautical and space applications. The double-clad (DC) fiber converts the poor beamquality of high-power large-area pump diodes from the 1st cladding to laser light at another wavelength guided in an active single-mode core. High-power coherent MOPA (Master Oscillator Power Amplifier) sources (several 10W CW or several 100W in pulsed regime) will soon be achieved. Unfortunately it also brings nonlinear effects which quickly impairs output signal distortions. Stimulated Brillouin scattering (SBS) and optical parametric amplification (OPA) have been shown to be strong limitations. Based on amplifier modeling and experiments we discuss the performances of these sources.

  12. An 8–18 GHz broadband high power amplifier

    International Nuclear Information System (INIS)

    Wang Lifa; Yang Ruixia; Li Yanlei; Wu Jingfeng

    2011-01-01

    An 8–18 GHz broadband high power amplifier (HPA) with a hybrid integrated circuit (HIC) is designed and fabricated. This HPA is achieved with the use of a 4-fingered micro-strip Lange coupler in a GaAs MMIC process. In order to decrease electromagnetic interference, a multilayer AlN material with good heat dissipation is adopted as the carrier of the power amplifier. When the input power is 25 dBm, the saturated power of the continuous wave (CW) outputted by the power amplifier is more than 39 dBm within the frequency range of 8–13 GHz, while it is more than 38.6 dBm within other frequency ranges. We obtain the peak power output, 39.4 dBm, at the frequency of 11.9 GHz. In the whole frequency band, the power-added efficiency is more than 18%. When the input power is 18 dBm, the small signal gain is 15.7 ± 0.7 dB. The dimensions of the HPA are 25 × 15 × 1.5 mm 3 . (semiconductor integrated circuits)

  13. Thermal effects in high average power optical parametric amplifiers.

    Science.gov (United States)

    Rothhardt, Jan; Demmler, Stefan; Hädrich, Steffen; Peschel, Thomas; Limpert, Jens; Tünnermann, Andreas

    2013-03-01

    Optical parametric amplifiers (OPAs) have the reputation of being average power scalable due to the instantaneous nature of the parametric process (zero quantum defect). This Letter reveals serious challenges originating from thermal load in the nonlinear crystal caused by absorption. We investigate these thermal effects in high average power OPAs based on beta barium borate. Absorption of both pump and idler waves is identified to contribute significantly to heating of the nonlinear crystal. A temperature increase of up to 148 K with respect to the environment is observed and mechanical tensile stress up to 40 MPa is found, indicating a high risk of crystal fracture under such conditions. By restricting the idler to a wavelength range far from absorption bands and removing the crystal coating we reduce the peak temperature and the resulting temperature gradient significantly. Guidelines for further power scaling of OPAs and other nonlinear devices are given.

  14. Theoretical analysis of quantum dot amplifiers with high saturation power and low noise figure

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers.......Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers....

  15. High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

  16. High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

  17. Short pulse mid-infrared amplifier for high average power

    CSIR Research Space (South Africa)

    Botha, LR

    2006-09-01

    Full Text Available High pressure CO2 lasers are good candidates for amplifying picosecond mid infrared pulses. High pressure CO2 lasers are notorious for being unreliable and difficult to operate. In this paper a high pressure CO2 laser is presented based on well...

  18. Picosecond mid-infrared amplifier for high average power.

    CSIR Research Space (South Africa)

    Botha, LR

    2007-04-01

    Full Text Available High pressure CO2 lasers are good candidates for amplifying picosecond mid infrared pulses. High pressure CO2 lasers are notorious for being unreliable and difficult to operate. In this paper a high pressure CO2 laser is presented based on well...

  19. NASA satellite communications application research. Phase 2: Efficient high power, solid state amplifier for EFH communications

    Science.gov (United States)

    Benet, James

    1993-01-01

    The final report describes the work performed from 9 Jun. 1992 to 31 Jul. 1993 on the NASA Satellite Communications Application Research (SCAR) Phase 2 program, Efficient High Power, Solid State Amplifier for EHF Communications. The purpose of the program was to demonstrate the feasibility of high-efficiency, high-power, EHF solid state amplifiers that are smaller, lighter, more efficient, and less costly than existing traveling wave tube (TWT) amplifiers by combining the output power from up to several hundred solid state amplifiers using a unique orthomode spatial power combiner (OSPC).

  20. Two-stage, high power X-band amplifier experiment

    International Nuclear Information System (INIS)

    Kuang, E.; Davis, T.J.; Ivers, J.D.; Kerslick, G.S.; Nation, J.A.; Schaechter, L.

    1993-01-01

    At output powers in excess of 100 MW the authors have noted the development of sidebands in many TWT structures. To address this problem an experiment using a narrow bandwidth, two-stage TWT is in progress. The TWT amplifier consists of a dielectric (e = 5) slow-wave structure, a 30 dB sever section and a 8.8-9.0 GHz passband periodic, metallic structure. The electron beam used in this experiment is a 950 kV, 1 kA, 50 ns pencil beam propagating along an applied axial field of 9 kG. The dielectric first stage has a maximum gain of 30 dB measured at 8.87 GHz, with output powers of up to 50 MW in the TM 01 mode. In these experiments the dielectric amplifier output power is about 3-5 MW and the output power of the complete two-stage device is ∼160 MW at the input frequency. The sidebands detected in earlier experiments have been eliminated. The authors also report measurements of the energy spread of the electron beam resulting from the amplification process. These experimental results are compared with MAGIC code simulations and analytic work they have carried out on such devices

  1. MMIC for High-Efficiency Ka-BAnd GaN Power Amplifiers (2007043), Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal addresses the need for high-efficiency, high-output power amplifiers operating in the Ka-band frequencies. For space communications, the power...

  2. Multi-pass amplifier architecture for high power laser systems

    Science.gov (United States)

    Manes, Kenneth R; Spaeth, Mary L; Erlandson, Alvin C

    2014-04-01

    A main amplifier system includes a first reflector operable to receive input light through a first aperture and direct the input light along an optical path. The input light is characterized by a first polarization. The main amplifier system also includes a first polarizer operable to reflect light characterized by the first polarization state. The main amplifier system further includes a first and second set of amplifier modules. Each of the first and second set of amplifier modules includes an entrance window, a quarter wave plate, a plurality of amplifier slablets arrayed substantially parallel to each other, and an exit window. The main amplifier system additionally includes a set of mirrors operable to reflect light exiting the first set of amplifier modules to enter the second set of amplifier modules and a second polarizer operable to reflect light characterized by a second polarization state.

  3. The design of a linear L-band high power amplifier for mobile communication satellites

    Science.gov (United States)

    Whittaker, N.; Brassard, G.; Li, E.; Goux, P.

    1990-01-01

    A linear L-band solid state high power amplifier designed for the space segment of the Mobile Satellite (MSAT) mobile communication system is described. The amplifier is capable of producing 35 watts of RF power with multitone signal at an efficiency of 25 percent and with intermodulation products better than 16 dB below carrier.

  4. High-power piezo drive amplifier for large stack and PFC applications

    Science.gov (United States)

    Clingman, Dan J.; Gamble, Mike

    2001-08-01

    This paper describes the continuing development of Boeing High Power Piezo Drive Amplifiers. Described is the development and testing of a 1500 Vpp, 8 amp switching amplifier. This amplifier is used to drive a piezo stack driven rotor blade trailing edge flap on a full size helicopter. Also discuss is a switching amplifier designed to drive a Piezo Fiber Composite (PFC) active twist rotor blade. This amplifier was designed to drive the PFC material at 2000 Vpp and 0.5 amps. These amplifiers recycle reactive energy, allowing for a power and weight efficient amplifier design. This work was done in conjunction with the DARPA sponsored Phase II Smart Rotor Blade program and the NASA Langley Research Center sponsored Active Twist Rotor (ATR) blade program.

  5. Design and development of power supplies for high power IOT based RF amplifier

    International Nuclear Information System (INIS)

    Kumar, Yashwant; Kumari, S.; Ghosh, M.K.; Bera, A.; Sadhukhan, A.; Pal, S.S.; Khare, V.K.; Tiwari, T.P.; Thakur, S.K.; Saha, S.

    2013-01-01

    Design, development, circuit topology, function of system components and key system specifications of different power supplies for biasing electrodes of Thales Inductive Output Tube (IOT) based high power RF amplifier are presented in this paper. A high voltage power supply (-30 kV, 3.2A dc) with fast (∼microsecond) crowbar protection circuit is designed, developed and commissioned at VECC for testing the complete setup. Other power supplies for biasing grid electrode (300V, 0.5A dc) and Ion Pump (3 kV, 0.1mA dc) of IOT are also designed, developed and tested with actual load. A HV Deck (60kV Isolation) is specially designed in house to place these power supplies which are floating at 30 kV. All these power supplies are powered by an Isolation Transformer (5 kVA, 60 kV isolation) designed and developed in VECC. (author)

  6. A high-power two stage traveling-wave tube amplifier

    International Nuclear Information System (INIS)

    Shiffler, D.; Nation, J.A.; Schachter, L.; Ivers, J.D.; Kerslick, G.S.

    1991-01-01

    Results are presented on the development of a two stage high-efficiency, high-power 8.76-GHz traveling-wave tube amplifier. The work presented augments previously reported data on a single stage amplifier and presents new data on the operational characteristics of two identical amplifiers operated in series and separated from each other by a sever. Peak powers of 410 MW have been obtained over the complete pulse duration of the device, with a conversion efficiency from the electron beam to microwave energy of 45%. In all operating conditions the severed amplifier showed a ''sideband''-like structure in the frequency spectrum of the microwave radiation. A similar structure was apparent at output powers in excess of 70 MW in the single stage device. The frequencies of the ''sidebands'' are not symmetric with respect to the center frequency. The maximum, single frequency, average output power was 210 MW corresponding to an amplifier efficiency of 24%. Simulation data is also presented that indicates that the short amplifiers used in this work exhibit significant differences in behavior from conventional low-power amplifiers. These include finite length effects on the gain characteristics, which may account for the observed narrow bandwidth of the amplifiers and for the appearance of the sidebands. It is also found that the bunching length for the beam may be a significant fraction of the total amplifier length

  7. Impact of gain saturation on the mode instability threshold in high-power fiber amplifiers

    DEFF Research Database (Denmark)

    Hansen, Kristian Rymann; Lægsgaard, Jesper

    2014-01-01

    We present a coupled-mode model of transverse mode instability in high-power fiber amplifiers, which takes the effect of gain saturation into account. The model provides simple semi-analytical formulas for the mode instability threshold, which are valid also for highly saturated amplifiers...

  8. High Power Uplink Amplifier for Deep Space Communications, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Critical to the success of delivering on the promise of deep space optical communications is the creation of a stable and reliable high power multichannel optical...

  9. High Power Uplink Amplifier for Deep Space Communications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Critical to the success of delivering on the promise of deep space optical communications is the creation of a stable and reliable high power multichannel optical...

  10. Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

    NARCIS (Netherlands)

    Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

    2005-01-01

    In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

  11. High power X-band coaxial amplifier experiments

    International Nuclear Information System (INIS)

    Davis, T.J.; Nation, J.A.

    1991-01-01

    Studies are continuing on the development of X-band coaxial microwave amplifiers as a source for next generation linear colliders. Coaxial amplifiers employ an annular electron beam propagating between inner and outer drift tube conductors, a configuration which allows large increases in beam current over standard pencil beam amplifiers. Large average diameter systems may still be used without mode competition since TM mode cutoff frequencies are controlled by the separation between conductors. A number of amplifier configurations are being studied, all primed by a driven initial cavity which resonates around 9 GHz. Simple theory of coaxial systems and particle-in-cell simulations are presented, as well as initial experimental results using a 420 keV, 7-8 kA, 9 cm diameter annular beam

  12. Linear and nonlinear analysis of high-power rf amplifiers

    International Nuclear Information System (INIS)

    Puglisi, M.

    1983-01-01

    After a survey of the state variable analysis method the final amplifier for the CBA is analyzed taking into account the real beam waveshape. An empirical method for checking the stability of a non-linear system is also considered

  13. Antares laser power amplifier

    International Nuclear Information System (INIS)

    Stine, R.D.; Ross, G.F.; Silvernail, C.

    1979-01-01

    The overall design of the Antares laser power amplifier is discussed. The power amplifier is the last stage of amplification in the 100-kJ Antares laser. In the power amplifier a single, cylindrical, grid-controlle, cold-cathode electron gun is surrounded by 12 large-aperture CO 2 electron-beam sustained laser discharge sectors. Each power amplifier will deliver 18 kJ and the six modules used in Antares will produce the required 100 kJ for delivery to the target. A large-scale interaction between optical, mechanical, and electrical disciplines is required to meet the design objectives. Significant component advances required by the power amplifier design are discussed

  14. Millimeter-wave power amplifiers

    CERN Document Server

    du Preez, Jaco

    2017-01-01

    This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.

  15. High peak power picosecond hybrid fiber and solid-state amplifier system

    International Nuclear Information System (INIS)

    Wushouer, X; Yan, P; Yu, H; Liu, Q; Fu, X; Yan, X; Gong, M

    2010-01-01

    We report the high peak power picosecond hybrid fiber and solid-state laser amplifier system. The passively mode-locked solid-state seed source produced an average power of 1.8 W with pulse width of 14 ps and repetition rate of 86 MHz. It was directly coupled into the first Yb-doped polarized photonic crystal fiber amplifier stage. To avoid the nonlinear effects in fiber, the output power from the first stage was merely amplified to 24 W with the narrow spectra broadening of 0.21 nm. For the improvement of the peak power, the dual-end pumped composite Nd:YVO 4 amplifier system has been chosen at the second stage. To reduce the serious thermal effect, the thermally bonded composite YVO 4 – Nd:YVO 4 – YVO 4 rod crystal was used as the gain medium. The 53 W TEM 00 mode with the peak power of 40 kW, beam quality of M 2 < 1.15, corresponding to the optical-optical efficiency of 42.4% was obtained at the hybrid amplifier laser system. The system allows using a low power seed source and demonstrates an increase in the peak power beyond a fiber master oscillator power amplifier's (MOPA's) limit

  16. Very fast, high peak-power, planar triode amplifiers for driving optical gates

    International Nuclear Information System (INIS)

    Howland, M.M.; Davis, S.J.; Gagnon, W.L.

    1979-01-01

    Recent extensions of the peak power capabilities of planar triodes have made possible the latter's use as very fast pulse amplifiers, to drive optical gates within high-power Nd:glass laser chains. These pulse amplifiers switch voltages in the 20 kV range with rise times of a few nanoseconds, into crystal optical gates that are essentially capacitive loads. This paper describes a simplified procedure for designing these pulse amplifiers. It further outlines the use of bridged-T constant resistance networks to transform load capacitance into pure resistance, independent of frequency

  17. Development of High Power Amplifiers for Space and Ground-based Applications

    DEFF Research Database (Denmark)

    Hernández, Carlos Cilla

    The power amplifier used in the transmitter of a microwave system is a key issue, and it derermines the system performance, cost, power consumption and reliability to a considerable extent. Traditionally, most of high power amplifiers used in military and commercial applications were tube......, the device was delivering power levels larger than 75 W, PAE >35% and gain oscillating between 7.5 +/- 0.5 dB. Measurements were shifted down in frequency 1 GHz, but simulations predicted maximum power levels similar to the ones measured....

  18. Coherent combining of high brightness tapered lasers in master oscillator power amplifier configuration

    Science.gov (United States)

    Albrodt, P.; Hanna, M.; Moron, F.; Decker, J.; Winterfeldt, M.; Blume, G.; Erbert, G.; Crump, P.; Georges, P.; Lucas-Leclin, G.

    2018-02-01

    Improved diode laser beam combining techniques are in strong demand for applications in material processing. Coherent beam combining (CBC) is the only combining approach that has the potential to maintain or even improve all laser properties, and thus has high potential for future systems. As part of our ongoing studies into CBC of diode lasers, we present recent progress in the coherent superposition of high-power single-pass tapered laser amplifiers. The amplifiers are seeded by a DFB laser at λ = 976 nm, where the seed is injected into a laterally single-mode ridge-waveguide input section. The phase pistons on each beam are actively controlled by varying the current in the ridge section of each amplifier, using a sequential hill-climbing algorithm, resulting in a combined beam with power fluctuations of below 1%. The currents into the tapered sections of the amplifiers are separately controlled, and remain constant. In contrast to our previous studies, we favour a limited number of individual high-power amplifiers, in order to preserve a high extracted power per emitter in a simple, low-loss coupling arrangement. Specifically, a multi-arm interferometer architecture with only three devices is used, constructed using 6 mm-long tapered amplifiers, mounted junction up on C-mounts, to allow separate contact to single mode and amplifier sections. A maximum coherently combined power of 12.9 W is demonstrated in a nearly diffraction-limited beam, corresponding to a 65% combining efficiency, with power mainly limited by the intrinsic beam quality of the amplifiers. Further increased combined power is currently sought.

  19. Development of high sensitivity transimpedance amplifier module for self powered neutron detectors

    International Nuclear Information System (INIS)

    Khan, T.K.; Tamboli, P.K.; Antony, J.; Balasubramanian, R.; Agilandaeswari, K.; Pramanik, M.

    2010-01-01

    This paper describes design and development of a Transimpedance Amplifier for amplification of very low current from in core Self Powered Neutron Detectors (SPND). Measurement of neutron flux is very important for operation, control and protection of Nuclear Power Plant (NPP). SPND is used to measure Reactor incore flux/power. Based on sensitivity of emitter material used in SPND, pitch length and neutron flux (power level); the current output from SPND varies from few pA to few μA. The described amplifier is suitable to use for this current range. The amplifier provides a very high gain using a resistive T network feedback topology. The amplifier is designed in two stages using ultra low bias current FET OPAMPs. Design of Transimpedance amplifier is carefully done to include ultra low input bias current, low offset voltage and noise. The amplifier has in built test facility for calibration and on line test facility for measurement of insulation resistance (IR). The amplifier module has on board isolated DC-DC converter circuit complying MIL/STD/461C/D which generate isolated +/-15V and +12V supply to provide parameter to parameter ground isolation and independence among each module/signal.The output from the amplifier is 0V to 6V for 0 to 150%FP. The design is simulated in computer and amplifier used at TAPS-3 was modified as per new design and has been tested at TAPS-3 site. The amplifier performed satisfactorily. The results showed that the IR measurement technique adopted in the design can tolerate lower IR of SPND in existing design. (author)

  20. Design Methodology of High Power Distributed Amplifier Employing Broadband Impedance Transformer

    DEFF Research Database (Denmark)

    Narendra, Kumar; Zhurbenko, Vitaliy; Collantes, Juan Mari

    2009-01-01

    A novel topology of a high power distributed amplifier (DA) in combination with a broadband impedance transformer is presented. The advantages of the proposed topology are explored analytically and verified by a full-wave 3D simulations. Stability of the high power DA is verified with the pole...

  1. CERN-group conceptual design of a fast neutron operated high power energy amplifier

    International Nuclear Information System (INIS)

    Rubbia, C.; Rubio, J.A.; Buono, S.

    1997-01-01

    The practical feasibility of an Energy Amplifier (EA) with power and power density which are comparable to the ones of the present generation of large PWR is discussed in this paper. This is only possible with fast neutrons. Schemes are described which offer a high gain, a large maximum power density and an extended burn-up, well in excess of 100 GW x d/t corresponding to about five years at full power operation with no intervention on the fuel core. The following topics are discussed: physics considerations and parameter definition, the accelerator complex, the energy amplifier unit, computer simulated operation, and fuel cycle closing

  2. CERN-group conceptual design of a fast neutron operated high power energy amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Rubbia, C; Rubio, J A [European Organization for Nuclear Research, CERN, Geneva (Switzerland); Buono, S [Laboratoire du Cyclotron, Nice (France); and others

    1997-11-01

    The practical feasibility of an Energy Amplifier (EA) with power and power density which are comparable to the ones of the present generation of large PWR is discussed in this paper. This is only possible with fast neutrons. Schemes are described which offer a high gain, a large maximum power density and an extended burn-up, well in excess of 100 GW x d/t corresponding to about five years at full power operation with no intervention on the fuel core. The following topics are discussed: physics considerations and parameter definition, the accelerator complex, the energy amplifier unit, computer simulated operation, and fuel cycle closing. 84 refs, figs, tabs.

  3. High efficiency class-I audio power amplifier using a single adaptive supply

    International Nuclear Information System (INIS)

    Peng Zhenfei; Yang Shanshand; Feng Yong; Hong Zhiliang; Liu Yang

    2012-01-01

    A high efficiency class-I linear audio power amplifier (PA) with an adaptive supply is presented. Its efficiency is improved by a dynamic supply to reduce the power transistors' voltage drop. A gain compression technique is adopted to make the amplifier accommodate a single positive supply. Circuit complicity and chip area are reduced because no charge pump is necessary for the negative supply. A common shared mode voltage and a symmetric layout pattern are used to minimize the non-linearity. A peak efficiency of 80% is reached at peak output power. The measured THD+N before and after the supply switching point are 0.01% and 0.05%, respectively. The maximum output power is 410 mW for an 8 Ω speaker load. Unlike switching amplifiers, the class-I amplifier operates as a linear amplifier and hence has a low EMI. The advantage of a high efficiency and low EMI makes the class-I amplifier suitable for portable and RF sensitive applications. (semiconductor integrated circuits)

  4. A broadband high-efficiency Doherty power amplifier using symmetrical devices

    Science.gov (United States)

    Cheng, Zhiqun; Zhang, Ming; Li, Jiangzhou; Liu, Guohua

    2018-04-01

    This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier (DPA) using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain efficiency is achieved at 6-dB back-off power, over the frequency band of 1.9–2.4 GHz. Project supported by the National Natural Science Foundation of China (No. 60123456), the Zhejiang Provincial Natural Science Foundation of China (No. LZ16F010001), and the Zhejiang Provincial Public Technology Research Project (No. 2016C31070).

  5. The design study of the high power solid-state amplifier in S-band

    International Nuclear Information System (INIS)

    Tozyo, E.; Kobayashi, K.; Yoshida, K.

    1976-01-01

    We have designed the 500W high power solid-state amplifier for the microwave system of INS electron linac. In this design study the output pulse power level of each module is set as possible as high, so the total number of elements is well reduced within the present microwave technics. In comparison with TWTA highly stabilized and maintenance-free operations are expected with 5 years' MTF. (auth.)

  6. S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

    Science.gov (United States)

    Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

    This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

  7. Mode control in a high gain relativistic klystron amplifier with 3 GW output power

    Science.gov (United States)

    Wu, Yang; Xie, Hong-Quan; Xu, Zhou

    2014-01-01

    Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.

  8. Solid state high power amplifier for driving the SLC injector klystron

    International Nuclear Information System (INIS)

    Judkins, J.G.; Clendenin, J.E.; Schwarz, H.D.

    1985-03-01

    The SLC injector klystron rf drive is now provided by a recently developed solid-state amplifier. The high gain of the amplifier permits the use of a fast low-power electronic phase shifter. Thus the SLC computer control system can be used to shift the phase of the high-power rf rapidly during the fill time of the injector accelerator section. These rapid phase shifts are used to introduce a phase-energy relationship in the accelerated electron pulse in conjunction with the operation of the injector bunch compressor. The amplifier, the method of controlling the rf phase, and the operational characteristics of the system are described. 5 refs., 4 figs

  9. ICC Experiment Performance Improvement through Advanced Feedback Controllers for High-Power Low-Cost Switching Power Amplifiers

    International Nuclear Information System (INIS)

    Nelson, Brian A.

    2006-01-01

    Limited resources force most smaller fusion energy research experiments to have little or no feedback control of their operational parameters, preventing achievement of their full operational potential. Recent breakthroughs in high-power switching technologies have greatly reduced feedback-controlled power supply costs, primarily those classified as switching power amplifiers. However, inexpensive and flexible controllers for these power supplies have not been developed. A uClinux-based micro-controller (Analog Devices Blackfin BF537) was identified as having the capabilities to form the base of a digital control system for switching power amplifiers. A control algorithm was created, and a Linux character device driver was written to realize the algorithm. The software and algorithm were successfully tested on a switching power amplifier and magnetic field coil using University of Washington (subcontractor) resources

  10. An audio FIR-DAC in a BCD process for high power Class-D amplifiers

    NARCIS (Netherlands)

    Doorn, T.S.; van Tuijl, Adrianus Johannes Maria; Schinkel, Daniel; Annema, Anne J.; Berkhout, M.; Berkhout, M.; Nauta, Bram

    A 322 coefficient semi-digital FIR-DAC using a 1-bit PWM input signal was designed and implemented in a high voltage, audio power bipolar CMOS DMOS (BCD) process. This facilitates digital input signals for an analog class-D amplifier in BCD. The FIR-DAC performance depends on the ISI-resistant

  11. Thermo-optical effects in high-power Ytterbium-doped fiber amplifiers

    DEFF Research Database (Denmark)

    Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes

    2011-01-01

    We investigate the effect of temperature gradients in high-power Yb-doped fiber amplifiers by a numerical beam propagation model, which takes thermal effects into account in a self-consistent way. The thermally induced change in the refractive index of the fiber leads to a thermal lensing effect...

  12. A high power gain switched diode laser oscillator and amplifier for the CEBAF polarized electron injector

    International Nuclear Information System (INIS)

    Poelker, M.; Hansknecht, J.

    1996-01-01

    The photocathode in the polarized electron source at Jefferson Lab is illuminated with pulsed laser light from a gain switched diode laser and diode optical amplifier. Laser pulse repetition rates up to 2,000 MHz, optical pulsewidths between 31 and 123 ps, and average power > 100 mW are demonstrated. The laser system is highly reliable and completely remotely controlled

  13. A high efficiency PWM CMOS class-D audio power amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Zhangming; Liu Lianxi; Yang Yintang [Institute of Microelectronics, Xidian University, Xi' an 710071 (China); Lei Han, E-mail: zmyh@263.ne [Xi' an Power-Rail Micro Co., Ltd, Xi' an 710075 (China)

    2009-02-15

    Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 mum CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 muA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm{sup 2}. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

  14. A high efficiency PWM CMOS class-D audio power amplifier

    International Nuclear Information System (INIS)

    Zhu Zhangming; Liu Lianxi; Yang Yintang; Lei Han

    2009-01-01

    Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm 2 . With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

  15. A high efficiency PWM CMOS class-D audio power amplifier

    Science.gov (United States)

    Zhangming, Zhu; Lianxi, Liu; Yintang, Yang; Han, Lei

    2009-02-01

    Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 × 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

  16. A high power picosecond Nd:YVO4 master oscillator power amplifier system pumped by 880 nm diodes

    International Nuclear Information System (INIS)

    Yan, S; Yan, X; Yu, H; Zhang, L; Guo, L; Sun, W; Hou, W; Lin, X

    2013-01-01

    We present a high power 880 nm diode-pumped passively mode-locked Nd:YVO 4 oscillator, followed by an 880 nm diode-pumped Nd:YVO 4 amplifier. In the oscillator, a maximum power of 8.7 W was obtained with a repetition rate of 63 MHz and pulse duration of 32 ps, corresponding to an optical efficiency of 36%. The beam quality factors M 2 were measured to be M x 2 =1.2 and M y 2 =1.1 9, respectively. The amplifier generated up to 19.1 W output power with the pulse width and repetition rate remaining unaltered after amplification. (paper)

  17. Development of a high power millimeter wave free-electron laser amplifier

    International Nuclear Information System (INIS)

    Bidwell, S.W.; Zhang, Z.X.; Antonsen, T.M. Jr.; Destler, W.W.; Granatstein, V.L.; Levush, B.; Rodgers, J.; Freund, H.P.

    1992-01-01

    Progress on the development of a high-average-power millimeter wave free-electron laser amplifier is reported. Successful sheet electron beam propagation has been observed through a 54 cm long wiggler magnet. One hundred percent transport efficiency is reported with a 15 A, 0.1 cm x 2.0 cm, sheet electron beam through B w = 5.1 kG, λ w = 0.96 cm, planar electromagnet wiggler. Preliminary success with a novel, yet simple, method of side focusing using offset poles is reported. Status of development on a 94 GHz, 180 kW, pulsed amplifier is discussed with results from numerical simulation

  18. NASA developments in solid state power amplifiers

    Science.gov (United States)

    Leonard, Regis F.

    1990-01-01

    Over the last ten years, NASA has undertaken an extensive program aimed at development of solid state power amplifiers for space applications. Historically, the program may be divided into three phases. The first efforts were carried out in support of the advanced communications technology satellite (ACTS) program, which is developing an experimental version of a Ka-band commercial communications system. These first amplifiers attempted to use hybrid technology. The second phase was still targeted at ACTS frequencies, but concentrated on monolithic implementations, while the current, third phase, is a monolithic effort that focusses on frequencies appropriate for other NASA programs and stresses amplifier efficiency. The topics covered include: (1) 20 GHz hybrid amplifiers; (2) 20 GHz monolithic MESFET power amplifiers; (3) Texas Instruments' (TI) 20 GHz variable power amplifier; (4) TI 20 GHz high power amplifier; (5) high efficiency monolithic power amplifiers; (6) GHz high efficiency variable power amplifier; (7) TI 32 GHz monolithic power amplifier performance; (8) design goals for Hughes' 32 GHz variable power amplifier; and (9) performance goals for Hughes' pseudomorphic 60 GHz power amplifier.

  19. High Power Amplifiers Chain nonlinearity influence on the accelerating beam stability in free electron laser (FLASH)

    CERN Document Server

    Cichalewski, w

    2010-01-01

    The high power amplifiers transfer characteristics nonlinearities can have a negative influence on the overall system performance. This is also true for the TESLA superconducting cavities accelerating field parameters control systems. This Low Level Radio Frequency control systems uses microwave high power amplifiers (like 10 MW klystrons) as actuators in the mentioned feedback loops. The amplitude compression and phase deviations phenomena introduced to the control signals can reduce the feedback performance and cause electron beam energy instabilities. The transfer characteristics deviations in the Free Electron Laser in Hamburg experiment have been investigated. The outcome of this study together with the description of the developed linearization method based on the digital predistortion approach have been described in this paper. Additionally, the results from the linearization tool performance tests in the FLASH's RF systems have been placed.

  20. Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

    Science.gov (United States)

    Thrivikraman, Tushar; Perkovic-Martin, Dragana; Jenabi, Masud; Hoffman, James

    2012-01-01

    This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

  1. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

    International Nuclear Information System (INIS)

    Gao Tongqiang; Zhang Chun; Chi Baoyong; Wang Zhihua

    2009-01-01

    To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-μm CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

  2. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers

    Energy Technology Data Exchange (ETDEWEB)

    Gao Tongqiang [Department of Electronics, Tsinghua University, Beijing 100084 (China); Zhang Chun; Chi Baoyong; Wang Zhihua, E-mail: gtq03@mails.tsinghua.edu.c [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2009-06-01

    To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-mum CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.

  3. Theoretical analysis of mode instability in high-power fiber amplifiers

    DEFF Research Database (Denmark)

    Hansen, Kristian Rymann; Alkeskjold, Thomas Tanggaard; Broeng, Jes

    2013-01-01

    We present a simple theoretical model of transverse mode instability in high-power rare-earth doped fiber amplifiers. The model shows that efficient power transfer between the fundamental and higher-order modes of the fiber can be induced by a nonlinear interaction mediated through the thermo......-optic effect, leading to transverse mode instability. The temporal and spectral characteristics of the instability dynamics are investigated, and it is shown that the instability can be seeded by both quantum noise and signal intensity noise, while pure phase noise of the signal does not induce instability...

  4. High-Efficiency, Ka-Band Solid-State Power Amplifier Utilizing GaN Technology, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop a high-efficiency, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

  5. High power rf amplifiers for accelerator applications: The large orbit gyrotron and the high current, space charge enhanced relativistic klystron

    International Nuclear Information System (INIS)

    Stringfield, R.M.; Fazio, M.V.; Rickel, D.G.; Kwan, T.J.T.; Peratt, A.L.; Kinross-Wright, J.; Van Haaften, F.W.; Hoeberling, R.F.; Faehl, R.; Carlsten, B.; Destler, W.W.; Warner, L.B.

    1991-01-01

    Los Alamos is investigating a number of high power microwave (HPM) sources for their potential to power advanced accelerators. Included in this investigation are the large orbit gyrotron amplifier and oscillator (LOG) and the relativistic klystron amplifier (RKA). LOG amplifier development is newly underway. Electron beam power levels of 3 GW, 70 ns duration, are planned, with anticipated conversion efficiencies into RF on the order of 20 percent. Ongoing investigations on this device include experimental improvement of the electron beam optics (to allow injection of a suitable fraction of the electron beam born in the gun into the amplifier structure), and computational studies of resonator design and RF extraction. Recent RKA studies have operated at electron beam powers into the device of 1.35 GW in microsecond duration pulses. The device has yielded modulated electron beam power approaching 300 MW using 3-5 kW of RF input drive. RF powers extracted into waveguide have been up to 70 MW, suggesting that more power is available from the device than has been converted to-date in the extractor

  6. A high-average power tapered FEL amplifier at submillimeter frequencies using sheet electron beams and short-period wigglers

    International Nuclear Information System (INIS)

    Bidwell, S.W.; Radack, D.J.; Antonsen, T.M. Jr.; Booske, J.H.; Carmel, Y.; Destler, W.W.; Granatstein, V.L.; Levush, B.; Latham, P.E.; Zhang, Z.X.

    1990-01-01

    A high-average-power FEL amplifier operating at submillimeter frequencies is under development at the University of Maryland. Program goals are to produce a CW, ∼1 MW, FEL amplifier source at frequencies between 280 GHz and 560 GHz. To this end, a high-gain, high-efficiency, tapered FEL amplifier using a sheet electron beam and a short-period (superconducting) wiggler has been chosen. Development of this amplifier is progressing in three stages: (1) beam propagation through a long length (∼1 m) of short period (λ ω = 1 cm) wiggler, (2) demonstration of a proof-of-principle amplifier experiment at 98 GHz, and (3) designs of a superconducting tapered FEL amplifier meeting the ultimate design goal specifications. 17 refs., 1 fig., 1 tab

  7. High-Efficiency, Ka-band Solid-State Power Amplifier Utilizing GaN Technology, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop an efficient, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

  8. Design of a high power cross field amplifier at X band with an internally coupled waveguide

    International Nuclear Information System (INIS)

    Eppley, K.; Ko, K.

    1991-01-01

    This paper reports that cross field amplifiers (CFA) have been used in many applications where high power, high frequency microwaves are needed. Although these tubes have been manufactured for decades, theoretical analysis of their properties is not as highly developed as for other microwave devices such as klystrons. The authors have developed a simulation model for CFAs using the PIC code CONDOR. The authors simulations indicate that there are limits to the maximum RF field strength that a CFA can sustain. When the fields become too high, efficiency becomes very poor, and the currents drawn may become so large that secondary emission cannot be maintained. It is therefore desirable to reduce the circuit impedance of a very high power tube. One method for doing this, proposed by Feinstein, involves periodically coupling a standard CFA circuit to an internal waveguide. Most of the power flows in the waveguide, so the overall impedance is much reduced. By adjusting the guide dimensions one can vary the impedance. Thus one can retain high impedance at the low power end but low impedance at the high power end. In principle one can maintain constant RF voltage throughout the tube

  9. High pumping-power fiber combiner for double-cladding fiber lasers and amplifiers

    Science.gov (United States)

    Zheng, Jinkun; Zhao, Wei; Zhao, Baoyin; Li, Zhe; Chang, Chang; Li, Gang; Gao, Qi; Ju, Pei; Gao, Wei; She, Shengfei; Wu, Peng; Hou, Chaoqi; Li, Weinan

    2018-03-01

    A high pumping-power fiber combiner for backward pumping configurations is fabricated and demonstrated by manufacturing process refinement. The pump power handling capability of every pump fiber can extend to 600 W, corresponding to the average pump coupling efficiency of 94.83%. Totally, 2.67-kW output power with the beam quality factor M2 of 1.41 was obtained, using this combiner in the fiber amplifier experimental setup. In addition, the temperature of the splicing region was less than 50.0°C in the designed combiner under the action of circulating cooling water. The experimental results prove that the designed combiner is a promising integrated all-fiber device for multikilowatt continuous-wave fiber laser with excellent beam quality.

  10. Influence of core NA on thermal-induced mode instabilities in high power fiber amplifiers

    International Nuclear Information System (INIS)

    Tao, Rumao; Ma, Pengfei; Wang, Xiaolin; Zhou, Pu; Liu, Zejin

    2015-01-01

    We report on the influence of core NA on thermal-induced mode instabilities (MI) in high power fiber amplifiers. The influence of core NA and the V-parameter on MI has been investigated numerically. It shows that core NA has a larger influence on MI for fibers with a smaller core-cladding-ratio, and the influence of core NA on the threshold is more obvious when the amplifiers are pumped at 915 nm. The dependence of the threshold on the V-parameter revealed that the threshold increases linearly as the V-parameter decreases when the V-parameter is larger than 3.5, and the threshold shows an exponential increase as the V-parameter decreases when the V-parameter is less than 3.5. We also discussed the effect of linewidth on MI, which indicates that the influence of linewidth can be neglected for a linewidth smaller than 1 nm when the fiber core NA is smaller than 0.07 and the fiber length is shorter than 20 m. Fiber amplifiers with different core NA were experimentally analyzed, which agreed with the theoretical predictions. (letter)

  11. NASA satellite communications application research, phase 2 addendum. Efficient high power, solid state amplifier for EHF communications

    Science.gov (United States)

    Benet, James

    1994-01-01

    This document is an addendum to the NASA Satellite Communications Application Research (SCAR) Phase 2 Final Report, 'Efficient High Power, Solid State Amplifier for EHF Communications.' This report describes the work performed from 1 August 1993 to 11 March 1994, under contract number NASW-4513. During this reporting period an array of transistor amplifiers was repaired by replacing all MMIC amplifier chips. The amplifier array was then tested using three different feedhorn configurations. Descriptions, procedures, and results of this testing are presented in this report, and conclusions are drawn based on the test results obtained.

  12. A New Principle for a High Efficiency Power Audio Amplifier for Use with a Digital Preamplifier

    DEFF Research Database (Denmark)

    Jensen, Jørgen Arendt

    1986-01-01

    The use of class-B and class-D amlifiers for converting digital audio signals to analog signals is discussed. It is shown that the class-D amplifier is unsuitable due to distortion. Therefore, a new principle involving a switch-mode power supply and a class-B amplifier is suggested. By regulating...... the supply voltage to the amplifier according to the amplitude of the audio signal, a higher efficiency than can be obtained by the current principles is achieved. The regulation can be done very efficiently by generating the control signal to the power supply in advance of the audio signal, made possible...

  13. Design, development and characterization studies of a large aperture high power Nd : glass rod amplifier stage

    International Nuclear Information System (INIS)

    Gopi, N.; Bapna, R.C.; Murali, C.G.; Narayan, B.S.; Dhareshwar, L.J.

    1992-01-01

    Laser-plasma interaction studies and experiments related to laser driven shocks as well as laser induced inertially confined thermonuclear fusion have resulted in an ever increasing demand for high brightness lasers capable of producing nanosecond pulse with energy of hundreds of kilo joules. High power Nd-glass laser chains with a master oscillator followed by a number of amplifier stages made up of rods, disks, slabs etc. are in operation in many leading laboratories in the world. This report describes the design, development and characterisation studies of a large aperture Nd:glass laser amplifier which is to be incorporated on line with the existing 40 J, 5 ns high power laser chain built for laser-plasma interaction and laser driven shock wave studies in the Laser and Plasma Technology Division. The development work described in this report discusses the design based on optimum material selection, optimisation of various sub components, ease of maintenance and smooth operation. The necessary operational electronics has also been described. The characterization studies mainly include measurement of spatial gain uniformity, thermally induced depolarization effects, and thermal relaxation studies. (author). 37 refs., 14 figs., 5 tabs

  14. A high-power millimeter-wave sheet beam free-electron laser amplifier

    International Nuclear Information System (INIS)

    Cheng, S.; Destler, W.W.; Granatstein, V.L.; Antonsen, T.M.; Levush, B.; Rodgers, J.; Zhang, Z.X.

    1996-01-01

    The results of experiments with a short period (9.6 mm) wiggler sheet electron beam (1.0 mm x 2.0 cm) millimeter-wave free electron laser (FEL) amplifier are presented. This FEL amplifier utilized a strong wiggler field for sheet beam confinement in the narrow beam dimension and an offset-pole side-focusing technique for the wide dimension beam confinement. The beam analysis herein includes finite emittance and space-charge effects. High-current beam propagation was achieved as a result of extensive analytical studies and experimental optimization. A design optimization resulted in a low sensitivity to structure errors and beam velocity spread, as well as a low required beam energy. A maximum gain of 24 dB was achieved with a 1-kW injected signal power at 86 GHz, a 450-kV beam voltage, 17-A beam current, 3.8-kG wiggler magnetic field, and a 74-period wiggler length. The maximum gain with a one-watt injected millimeter-wave power was observed to be over 30 dB. The lower gain at higher injection power level indicates that the device has approached saturation. The device was studied over a broad range of experimental parameters. The experimental results have a good agreement with expectations from a one-dimensional simulation code. The successful operation of this device has proven the feasibility of the original concept and demonstrated the advantages of the sheet beam FEL amplifier. The results of the studies will provide guidelines for the future development of sheet beam FEL's and/or other kinds of sheet beam devices. These devices have fusion application

  15. A compact broadband high efficient X-band 9-watt PHEMT MMIC high-power amplifier for phased array radar applications

    NARCIS (Netherlands)

    Hek, A.P. de; Hunneman, P.A.H.; Demmler, M.; Hulsmann, A.

    1999-01-01

    ln this paper the development and measurement results of a compact broadband 9-Watt high efficient X-band high-power amplifier are discussed. The described amplifier has the following state-of-the art performance: an average ouput power of 9 Watt, a gain of 20 dB and an average Power Added

  16. High efficiency fourth-harmonic generation from nanosecond fiber master oscillator power amplifier

    Science.gov (United States)

    Mu, Xiaodong; Steinvurzel, Paul; Rose, Todd S.; Lotshaw, William T.; Beck, Steven M.; Clemmons, James H.

    2016-03-01

    We demonstrate high power, deep ultraviolet (DUV) conversion to 266 nm through frequency quadrupling of a nanosecond pulse width 1064 nm fiber master oscillator power amplifier (MOPA). The MOPA system uses an Yb-doped double-clad polarization-maintaining large mode area tapered fiber as the final gain stage to generate 0.5-mJ, 10 W, 1.7- ns single mode pulses at a repetition rate of 20 kHz with measured spectral bandwidth of 10.6 GHz (40 pm), and beam qualities of Mx 2=1.07 and My 2=1.03, respectively. Using LBO and BBO crystals for the second-harmonic generation (SHG) and fourth-harmonic generation (FHG), we have achieved 375 μJ (7.5 W) and 92.5 μJ (1.85 W) at wavelengths of 532 nm and 266 nm, respectively. To the best of our knowledge these are the highest narrowband infrared, green and UV pulse energies obtained to date from a fully spliced fiber amplifier. We also demonstrate high efficiency SHG and FHG with walk-off compensated (WOC) crystal pairs and tightly focused pump beam. An SHG efficiency of 75%, FHG efficiency of 47%, and an overall efficiency of 35% from 1064 nm to 266 nm are obtained.

  17. Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation.

    Science.gov (United States)

    Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

    2017-04-04

    A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (-1.8 and -0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (-2.95 and -3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dB m input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dB m at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dB m at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dB m input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (-48.34, -44.21, -48.34, and -46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (-45.61, -41.57, -45.01, and -45.51 dB, respectively). When five-cycle 20 dB m input

  18. Audio power amplifier design handbook

    CERN Document Server

    Self, Douglas

    2013-01-01

    This book is essential for audio power amplifier designers and engineers for one simple reason...it enables you as a professional to develop reliable, high-performance circuits. The Author Douglas Self covers the major issues of distortion and linearity, power supplies, overload, DC-protection and reactive loading. He also tackles unusual forms of compensation and distortion produced by capacitors and fuses. This completely updated fifth edition includes four NEW chapters including one on The XD Principle, invented by the author, and used by Cambridge Audio. Cro

  19. 1-MHz high power femtosecond Yb-doped fiber chirped-pulse amplifier

    Science.gov (United States)

    Hu, Zhong-Qi; Yang, Pei-Long; Teng, Hao; Zhu, Jiang-Feng; Wei, Zhi-Yi

    2018-01-01

    A practical femtosecond polarization-maintaining Yb-doped fiber amplifier enabling 153 fs transform-limited pulse duration with 32 μJ pulse energy at 1 MHz repetition rate corresponding to a peak power of 0.21 GW is demonstrated. The laser system based on chirped-pulse amplification (CPA) technique is seeded by a dispersion managed, nonlinear polarization evolution (NPE) mode-locked oscillator with spectrum bandwidth of 31 nm at 1040 nm and amplified by three fiber pre-amplifying stages and a rod type fiber main amplifying stage. The laser works with beam quality of M2 of 1.3 and power stability of 0.63% (root mean square, RMS) over 24 hours will be stable sources for industrial micromachining, medical therapy and scientific research.

  20. External-cavity high-power dual-wavelength tapered amplifier with tunable THz frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2012-01-01

    A tunable 800 nm high-power dual-wavelength diode laser system with double-Littrow external-cavity feedback is demonstrated. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. A maximum output power of 1.54 W is achie......A tunable 800 nm high-power dual-wavelength diode laser system with double-Littrow external-cavity feedback is demonstrated. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. A maximum output power of 1.54 W...... is achieved with a frequency difference of 0.86 THz, the output power is higher than 1.3 W in the 5.0 THz range of frequency difference, and the amplified spontaneous emission intensity is more than 20 dB suppressed in the range of frequency difference. The beam quality factor M2 is 1.22±0.15 at an output...

  1. S-band 300 W pulsed solid state microwave amplifier development for driving high power klystrons for electron accelerators

    International Nuclear Information System (INIS)

    Mohania, Praveen; Shrivastava, Purushottam; Hannurkar, P.R.

    2005-01-01

    S-Band Microwave electron accelerators like microtrons and linear accelerators need pulsed microwaves from few megawatts to tens of megawatts to accelerator the electrons to desired energy and intensity. Klystron tube based driver amplifiers were used to drive the high power klystrons, which need microwave power from few tens of watts to 1 kW depending on tube output power and gain. A endeavour was initiated at Centre for Advanced Technology to develop state of art solid state S-band microwave amplifiers indigenously to drive the klystron tubes. A modular design approach was used and individual modules up to 160 W power levels were developed and tested. Finally combining 160 W modules will give up to 300 W output power. Several more modules can be combined to achieve even high power levels. Present paper describes the developmental efforts of 300 W S-band solid-state amplifiers and related microwave technologies. (author)

  2. Design of a high power cross field amplifier at X band with an internally coupled waveguide

    International Nuclear Information System (INIS)

    Eppley, K.; Ko, Kwok.

    1991-01-01

    Cross field amplifiers (CFA) have been used in many applications where high power, high frequency microwaves are needed. Although these tubes have been manufactured for decades, theoretical analysis of their properties is not as highly developed as for other microwave devices such as klystrons. We have developed a simulation model for CFAs using the PIC code CONDOR. Our simulations indicate that there are limits to the maximum RF field strength that a CEA can sustain. When the fields become too high, efficiency becomes very poor, and the currents drawn may become so large that secondary emission cannot be maintained. It is therefore desirable to reduce the circuit impedance of a very high power tube. One method for doing this, proposed by Feinstein, involves periodically coupling a standard CFA circuit to an internal waveguide. Most of the power flows in the waveguide, so the overall impedance is much reduced. By adjusting the guide dimensions one can vary the impedance. Thus one can retain high impedance at the low power end but low impedance at the high power end. In principle one can maintain constant RF voltage throughout the tube. CONDOR simulations have identified a good operating point at X band, with power generation of over 5 MW per cm and total efficiency of over 60 percent. ARGUS simulations have modelled the cold test properties of the coupled structure. The nominal design specifications are 300 MW output, 17 db gain, frequency 11.4 GHz, dc voltage 142 kV, magnetic field 5 kG, anode cathode gap 3.6 mm, total interaction length about 60 cm. We will discuss the results of code simulations and report on the status of the experimental effort

  3. High-Bandwidth, High-Efficiency Envelope Tracking Power Supply for 40W RF Power Amplifier Using Paralleled Bandpass Current Sources

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

    2005-01-01

    This paper presents a high-performance power conversion scheme for power supply applications that require very high output voltage slew rates (dV/dt). The concept is to parallel 2 switching bandpass current sources, each optimized for its passband frequency space and the expected load current....... The principle is demonstrated with a power supply, designed for supplying a 40 W linear RF power amplifier for efficient amplification of a 16-QAM modulated data stream...

  4. High Efficiency GPS Block III L1 band Envelope Tracking Power Amplifier

    Science.gov (United States)

    2016-03-31

    intermo asymmetric ri nction and is d 30.69MHz w measured with pe Amplifier e CGH40120F Sub-System: F e RFPA and E Fig. 7: Nati The switcher the...Paul T. The Efficiency W ack Power Am Dongsu Ki Bumman, "Hi lator for Enve ess Componen Hassan, M. ing power-sup z LTE Envelop ts Conference

  5. A high power cross-field amplifier at X-Band

    International Nuclear Information System (INIS)

    Eppley, K.; Feinstein, J.; Ko, K.; Kroll, N.; Lee, T.; Nelson, E.

    1991-05-01

    A high power cross-field amplifier is under development at SLAC with the objective of providing sufficient peak power to feed a section of an X-Band (11.424 GHz) accelerator without the need for pulse compression. The CFA being designed employs a conventional distributed secondary emission cathode but a novel anode structure which consists of an array of vane resonators alternatively coupled to a rectangular waveguide. The waveguide impedance (width) is tapered linearly from input to output so as to provide a constant RF voltage at the vane tips, leading to uniform power generation along the structure. Nominal design for this tube calls for 300 MW output power, 20 dB gain, DC voltage 142 KV, magnetic field 5 KG, anode-cathode gap 3.6 mm and total interaction length of about 60 cm. These specifications have been supported by computer simulations of both the RF slow wave structure as well as the electron space charge wave interaction. We have used ARGUS to model the cold circuit properties and CONDOR to model the electronic power conversion. An efficiency of 60 percent can be expected. We will discuss the details of the design effort. 5 refs., 6 figs

  6. Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Erbert, G.; Sumpf, B.

    2010-01-01

    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

  7. Object-oriented wavefront correction in an asymmetric amplifying high-power laser system

    Science.gov (United States)

    Yang, Ying; Yuan, Qiang; Wang, Deen; Zhang, Xin; Dai, Wanjun; Hu, Dongxia; Xue, Qiao; Zhang, Xiaolu; Zhao, Junpu; Zeng, Fa; Wang, Shenzhen; Zhou, Wei; Zhu, Qihua; Zheng, Wanguo

    2018-05-01

    An object-oriented wavefront control method is proposed aiming for excellent near-field homogenization and far-field distribution in an asymmetric amplifying high-power laser system. By averaging the residual errors of the propagating beam, smaller pinholes could be employed on the spatial filters to improve the beam quality. With this wavefront correction system, the laser performance of the main amplifier system in the Shen Guang-III laser facility has been improved. The residual wavefront aberration at the position of each pinhole is below 2 µm (peak-to-valley). For each pinhole, 95% of the total laser energy is enclosed within a circle whose diameter is no more than six times the diffraction limit. At the output of the main laser system, the near-field modulation and contrast are 1.29% and 7.5%, respectively, and 95% of the 1ω (1053 nm) beam energy is contained within a 39.8 µrad circle (6.81 times the diffraction limit) under a laser fluence of 5.8 J cm-2. The measured 1ω focal spot size and near-field contrast are better than the design values of the Shen Guang-III laser facility.

  8. High linearity 5.2-GHz power amplifier MMIC using CPW structure technology with a linearizer circuit

    International Nuclear Information System (INIS)

    Wu Chiasong; Lin Tah-Yeong; Wu Hsien-Ming

    2010-01-01

    A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit (MMIC), which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology. The power amplifier (PA) was studied taking into account the linearizer circuit and the coplanar waveguide (CPW) structures. Based on these technologies, the power amplifier, which has a chip size of 1.44 x 1.10 mm 2 , obtained an output power of 13.3 dBm and a power gain of 14 dB in the saturation region. An input third-order intercept point (HP 3 ) of -3 dBm, an output third-order intercept point (OIP 3 ) of 21.1 dBm and a power added efficiency (PAE) of 22% were attained, respectively. Finally, the overall power characterization exhibited high gain and high linearity, which illustrates that the power amplifier has a compact circuit size and exhibits favorable RF characteristics. This power circuit demonstrated high RF characterization and could be used for microwave power circuit applications at 5.2 GHz. (semiconductor integrated circuits)

  9. Low-Power Amplifier-Discriminators for High Time Resolution Detection

    CERN Document Server

    Despeisse, M; Anghinolfi, F; Tiuraniemi, S; Osmic, F; Riedler, P; Kluge, A; Ceccucci, A

    2009-01-01

    Low-power amplifier-discriminators based on a so-called NINO architecture have been developed with high time resolution for the readout of radiation detectors. Two different circuits were integrated in the NINO13 chip, processed in IBM 130 nm CMOS technology. The LCO version (Low Capacitance and consumption Optimization) was designed for potential use as front-end electronics in the Gigatracker of the NA62 experiment at CERN. It was developed as pixel readout for solid-state pixel detectors to permit minimum ionizing particle detection with less than 180 ps rms resolution per pixel on the output pulse, for power consumption below 300 mu W per pixel. The HCO version (High Capacitance Optimization) was designed with 4 mW power consumption per channel to provide timing resolution below 20 ps rms on the output pulse, for charges above 10 fC. Results presented show the potential of the LCO and HCO circuits for the precise timing readout of solid-state detectors, vacuum tubes or gas detectors, for applications in h...

  10. Design of High-Voltage Switch-Mode Power Amplifier Based on Digital-Controlled Hybrid Multilevel Converter

    Directory of Open Access Journals (Sweden)

    Yanbin Hou

    2016-01-01

    Full Text Available Compared with conventional Class-A, Class-B, and Class-AB amplifiers, Class-D amplifier, also known as switching amplifier, employs pulse width modulation (PWM technology and solid-state switching devices, capable of achieving much higher efficiency. However, PWM-based switching amplifier is usually designed for low-voltage application, offering a maximum output voltage of several hundred Volts. Therefore, a step-up transformer is indispensably adopted in PWM-based Class-D amplifier to produce high-voltage output. In this paper, a switching amplifier without step-up transformer is developed based on digital pulse step modulation (PSM and hybrid multilevel converter. Under the control of input signal, cascaded power converters with separate DC sources operate in PSM switch mode to directly generate high-voltage and high-power output. The relevant topological structure, operating principle, and design scheme are introduced. Finally, a prototype system is built, which can provide power up to 1400 Watts and peak voltage up to ±1700 Volts. And the performance, including efficiency, linearity, and distortion, is evaluated by experimental tests.

  11. High-power diode laser bars as pump sources for fiber lasers and amplifiers (Invited Paper)

    Science.gov (United States)

    Bonati, G.; Hennig, P.; Wolff, D.; Voelckel, H.; Gabler, T.; Krause, U.; T'nnermann, A.; Reich, M.; Limpert, J.; Werner, E.; Liem, A.

    2005-04-01

    Fiber lasers are pumped by fibercoupled, multimode single chip devices at 915nm. That"s what everybody assumes when asked for the type of fiber laser pumps and it was like this for many years. Coming up as an amplifier for telecom applications, the amount of pump power needed was in the range of several watts. Highest pump powers for a limited market entered the ten watts range. This is a range of power that can be covered by highly reliable multimode chips, that have to survive up to 25 years, e.g. in submarine applications. With fiber lasers entering the power range and the application fields of rod and thin disc lasers, the amount of pump power needed raised into the area of several hundred watts. In this area of pump power, usually bar based pumps are used. This is due to the much higher cost pressure of the industrial customers compared to telecom customers. We expect more then 70% of all industrial systems to be pumped by diode laser bars. Predictions that bar based pumps survive for just a thousand hours in cw-operation and fractions of this if pulsed are wrong. Bar based pumps have to perform on full power for 10.000h on Micro channel heat sinks and 20.000h on passive heatsinks in industrial applications, and they do. We will show a variety of data, "real" long time tests and statistics from the JENOPTIK Laserdiode as well as data of thousands of bars in the field, showing that bar based pumps are not just well suitable for industrial applications on high power levels, but even showing benefits compared to chip based pumps. And it"s reasonable, that the same objectives of cost effectiveness, power and lifetime apply as well to thin disc, rod and slab lasers as to fiber lasers. Due to the pumping of fiber lasers, examples will be shown, how to utilize bars for high brightness fiber coupling. In this area, the automation is on its way to reduce the costs on the fibercoupling, similar to what had been done in the single chip business. All these efforts are

  12. Development of high power CW and pulsed RF test facility based on 1 MW, 352.2 MHz klystron amplifier

    International Nuclear Information System (INIS)

    Badapanda, M.K.; Tripathi, Akhilesh; Upadhyay, Rinki; Rao, J.N.; Tiwari, Ashish; Jain, Akhilesh; Lad, M.R.; Hannurkar, P.R.

    2013-01-01

    A high power 1 MW, 352.2 MHz RF Test facility having CW and Pulse capability is being developed at Raja Ramanna Centre for Advanced Technology (RRCAT), Indore for performance evaluation of various RF components, accelerating structures and related subsystems. Thales make 1 MW, 352.2 MHz klystron amplifier (TH 2089) will be employed in this high power test facility, which is thoroughly tested for its performance parameters at rated operating conditions. Auxiliary power supplies like filament, electromagnet, ion pump and mod anode power supply as well as 200 W solid state driver amplifier necessary for this high power test facility have been developed. A high voltage floating platform is created for floating filament and mod anode power supplies. Interconnection of various power supplies and other subsystems of this test facility are being carried out. A high voltage 100 kV, 25 Amp DC crowbar less power supply and low conductivity water (LCW) plant required for this klystron amplifier are in advanced stage of development. NI make cRIO 9081 real time (RT) controller based control and interlock system has been developed to realize proper sequence of operation of various power supplies and to monitor the status of crucial parameters in this test facility. This RF test facility will provide confidence for development of RF System of future accelerators like SNS and ADSS. (author)

  13. Utilization of a Vircator to drive a High Power Relativistic Klystron Amplifier

    Science.gov (United States)

    Gardelle, J.; Bardy, J.; Cassany, B.; Desanlis, T.; Eyl, P.; Galtié, A.; Modin, P.; Voisin, L.; Balleyguier, P.; Gouard, P.; Donohue, J.

    2002-11-01

    At CESTA, we have been producing electron beams for some fifteen years by using induction accelerators and pulse diodes. First we had performed Frre-Electron Lasers experiments and we are currently studying the production of High-Power microwaves in the S-band. Among the possible sources we have chosen to perform Relativistic Klystron (RK) experiments with a pulse diode capable of generating a 700kV, 15 kA, 100 ns annular electron beam. In an amplifier configuration, we are testing the idea of using a Vircator as the driver for the first cavity of the klystron. This Vircator uses a simple electrical generator (Marx capacitor bank) which operates in the S-band in the GW class. By reducing the power level to about 100 MW, a 200 ns reliable and reproducible input driver pulse is obtained. First, we present the results of a preliminary experiment for which a coaxial cavity has been built in order to be fed by the Vircator emission at 2.45 GHz. Secondly, we give the experimental results in an oscillator configuration which corresponds to the fisrt step of our RK studies. Comparisons with the results of numerical simulations performed with MAGIC and MAFIA will be given for both experiments.

  14. High-energy master oscillator power amplifier with near-diffraction-limited output based on ytterbium-doped PCF fiber

    Science.gov (United States)

    Li, Rao; Qiao, Zhi; Wang, Xiaochao; Fan, Wei; Lin, Zunqi

    2017-10-01

    With the development of fiber technologies, fiber lasers are able to deliver very high power beams and high energy pulses which can be used not only in scientific researches but industrial fields (laser marking, welding,…). The key of high power fiber laser is fiber amplifier. In this paper, we present a two-level master-oscillator power amplifier system at 1053 nm based on Yb-doped photonic crystal fibers. The system is used in the front-end of high power laser facility for the amplification of nano-second pulses to meet the high-level requirements. Thanks to the high gain of the system which is over 50 dB, the pulse of more than 0.89 mJ energy with the nearly diffraction-limited beam quality has been obtained.

  15. Design development and testing of high voltage power supply with crowbar protection for IOT based RF amplifier system in VECC

    Science.gov (United States)

    Thakur, S. K.; Kumar, Y.

    2018-05-01

    This paper described the detailed design, development and testing of high voltage power supply (‑30 kV, 3.2 A) and different power supplies for biasing electrodes of Inductive Output Tube (IOT) based high power Radio Frequency (RF) amplifier. This IOT based RF amplifier is further used for pursuing research and development activity in superconducting RF cavity project at Variable Energy Cyclotron Centre (VECC) Kolkata. The state-of-the-art technology of IOT-based high power RF amplifier is designed, developed, and tested at VECC which is the first of its kind in India. A high voltage power supply rated at negative polarity of 30 kV dc/3.2 A is required for biasing cathode of IOT with crowbar protection circuit. This power supply along with crowbar protection system is designed, developed and tested at VECC for testing the complete setup. The technical difficulties and challenges occured during the design of cathode power supply, its crowbar protection techniques along with other supported power supplies i.e. grid and ion pump power supplies are discussed in this paper.

  16. A Front End for Multipetawatt Lasers Based on a High-Energy, High-Average-Power Optical Parametric Chirped-Pulse Amplifier

    International Nuclear Information System (INIS)

    Bagnoud, V.

    2004-01-01

    We report on a high-energy, high-average-power optical parametric chirped-pulse amplifier developed as the front end for the OMEGA EP laser. The amplifier provides a gain larger than 109 in two stages leading to a total energy of 400 mJ with a pump-to-signal conversion efficiency higher than 25%

  17. Power Amplifiers in CMOS Technology: A contribution to power amplifier theory and techniques

    NARCIS (Netherlands)

    Acar, M.

    2011-01-01

    In order to meet the demands from the market on cheaper, miniaturized mobile communications devices realization of RF power amplifiers in the mainstream CMOS technology is essential. In general, CMOS Power Amplifiers (PAs) require high voltage to decrease the matching network losses and for high

  18. A Compact Two-Stage 120 W GaN High Power Amplifier for SweepSAR Radar Systems

    Science.gov (United States)

    Thrivikraman, Tushar; Horst, Stephen; Price, Douglas; Hoffman, James; Veilleux, Louise

    2014-01-01

    This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT high-power amplifier (HPA) achieving 60% power-added efficiency at over 120Woutput power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and high-resolution imagery. The L-band HPA was designed using space-qualified state-of-the-art GaN HEMT technology. The amplifier exhibits over 34 dB of power gain at 51 dBm of output power across an 80 MHz bandwidth. The HPA is divided into two stages, an 8 W driver stage and 120 W output stage. The amplifier is designed for pulsed operation, with a high-speed DC drain switch operating at the pulsed-repetition interval and settles within 200 ns. In addition to the electrical design, a thermally optimized package was designed, that allows for direct thermal radiation to maintain low-junction temperatures for the GaN parts maximizing long-term reliability. Lastly, real radar waveforms are characterized and analysis of amplitude and phase stability over temperature demonstrate ultra-stable operation over temperature using integrated bias compensation circuitry allowing less than 0.2 dB amplitude variation and 2 deg phase variation over a 70 C range.

  19. High power 352 MHz solid state amplifiers developed at the Synchrotron SOLEIL

    Directory of Open Access Journals (Sweden)

    P. Marchand

    2007-11-01

    Full Text Available In SOLEIL, 5 solid state amplifiers provide the required rf power at 352  MHz: 1×35  kW in the booster and 4×190  kW in the storage ring. They consist in a combination of a large number of 330 W elementary modules (1×147 in the booster and 4×724 in the storage ring, based on a design developed in-house, with MOSFETs (metal-oxide-semiconductor field-effect transistors, integrated circulators, and individual power supplies. Although quite innovative and challenging for the required power range, this technology is very attractive and presents significant advantages as compared to the more conventional vacuum tubes, klystrons, or inductive output tubes (IOTs. The booster and two of the storage ring power plants have been successfully commissioned and the first operational experience is quite satisfactory. The amplifiers proved to be very reliable as well as easy and flexible in operation; they have not been responsible for any beam time loss.

  20. The Multidisk Diode-Pumped High Power Yb:YAG Laser Amplifier of High-Intensity Laser System with 1 kHz Repetition Rate

    Science.gov (United States)

    Kuptsov, G. V.; Petrov, V. V.; Petrov, V. A.; Laptev, A. V.; Kirpichnikov, A. V.; Pestryakov, E. V.

    2018-04-01

    The source of instabilities in the multidisk diode-pumped high power Yb:YAG laser amplifier with cryogenic closed-loop cooling in the laser amplification channel of the high-intensity laser system with 1 kHz repetition rate was determined. Dissected copper mounts were designed and used to suppress instabilities and to achieve repeatability of the system. The equilibrium temperature dependency of the active elements on average power was measured. The seed laser for the multidisk amplifier was numerically simulated and designed to allow one to increase pulses output energy after the amplifier up to 500 mJ.

  1. Lower-power, high-linearity class-AB current-mode programmable gain amplifier

    International Nuclear Information System (INIS)

    Wu Yiqiang; Wang Zhigong; Wang Junliang; Ma Li; Xu Jian; Tang Lu

    2014-01-01

    A novel class-AB implementation of a current-mode programmable gain amplifier (CPGA) including a current-mode DC offset cancellation loop is presented. The proposed CPGA is based on a current amplifier and provides a current gain in a range of 40 dB with a 1 dB step. The CPGA is characterized by a wide range of current gain variation, a lower power dissipation, and a small chip size. The proposed circuit is fabricated using a 0.18 μm CMOS technology. The CPGA draws a current of less than 2.52 mA from a 1.8 V supply while occupying an active area of 0.099 μm 2 . The measured results show an overall gain variation from 10 to 50 dB with a gain error of less than 0.40 dB. The OP 1dB varies from 11.80 to 13.71 dBm, and the 3 dB bandwidth varies from 22.2 to 34.7 MHz over the whole gain range. (semiconductor integrated circuits)

  2. Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

    Science.gov (United States)

    Bai, Xianchen; Yang, Jianhua; Zhang, Jiande

    2012-08-01

    By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

  3. Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

    Energy Technology Data Exchange (ETDEWEB)

    Bai Xianchen; Yang Jianhua; Zhang Jiande [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2012-08-15

    By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

  4. Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

    International Nuclear Information System (INIS)

    Bai Xianchen; Yang Jianhua; Zhang Jiande

    2012-01-01

    By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

  5. 1 GHz GaAs Buck Converter for High Power Amplifier Modulation Applications

    NARCIS (Netherlands)

    Busking, E.B.; Hek, A.P. de; Vliet, F.E. van

    2012-01-01

    A fully integrated 1 GHz buck converter output stage, including on-chip inductor and DC output filtering has been realized, in a standard high-voltage breakdown GaAs MMIC technology. This is a significant step forward in designing highspeed power control of supply-modulated HPAs (high power

  6. A new principle for a high-efficiency power audio amplifier for use with a digital preamplifier

    DEFF Research Database (Denmark)

    Jensen, Jørgen Arendt

    1987-01-01

    The use of class-B and class-D amplifiers for converting digital audio signals to analog signals is discussed. It is shown that the class-D amplifier is unsuitable due to distortion. Therefore a new principle involving a switch-mode power supply and a class-B amplifier is suggested. By regulating...... the supply voltage to the amplifier according to the amplitude of the audio signal, a higher efficiency than can be obtained by the usual principles is achieved. The regulation can be done very efficiently by generating the control signal to the power supply in advance of the audio signal, made possible...

  7. Regime dependence of photo-darkening-induced modal degradation in high power fiber amplifier (Conference Presentation)

    Science.gov (United States)

    Boullet, Johan; Vincont, Cyril; Jolly, Alain; Pierre, Christophe

    2017-03-01

    Thermally induced transverse modal instabilities (TMI) have attracted these five years an intense research efforts of the entire fiber laser development community, as it represents the current most limiting effect of further power scaling of high power fiber laser. Anyway, since 2014, a few publications point out a new limiting thermal effect: fiber modal degradation (FMD). It is characterized by a power rollover and simultaneous increase of the cladding light at an average power far from the TMI threshold together with a degraded beam which does not exhibit temporal fluctuations, which is one of the main characteristic of TMI. We report here on the first systemic experimental study of FMD in a high power photonic crystal fiber. We put a particular emphasis on the dependence of its average power threshold on the regime of operation. We experimentally demonstrate that this dependence is intrinsically linked to regime-dependent PD-saturated losses, which are nearly three times higher in CW regime than in short pulse picosecond regime. We make the hypothesis that the existence of these different PD equilibrium states between CW regime and picosecond QCW pulsed regime is due to a partial photo-bleaching of color centers in picosecond regime thanks to a higher probability of multi-photon process induced photobleaching (PB) at high peak power. This hypothesis is corroborated by the demonstration of the reversibility of the FMD induced in CW regime by simply switching the seed CW 1064 nm light by a short pulse, picosecond oscillator.

  8. Ultra High Power and Efficiency Space Traveling-Wave Tube Amplifier Power Combiner with Reduced Size and Mass for NASA Missions

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.; Wilson, Jeffrey D.; Force, Dale A.

    2009-01-01

    In the 2008 International Microwave Symposium (IMS) Digest version of our paper, recent advances in high power and efficiency space traveling-wave tube amplifiers (TWTAs) for NASA s space-to-Earth communications are presented. The RF power and efficiency of a new K-Band amplifier are 40 W and 50 percent and that of a new Ka-Band amplifier are 200 W and 60 percent. An important figure-of-merit, which is defined as the ratio of the RF power output to the mass (W/kg) of a TWT, has improved by a factor of ten over the previous generation Ka-Band devices. In this extended paper, a high power, high efficiency Ka-band combiner for multiple TWTs, based on a novel hybrid magic-T waveguide circuit design, is presented. The measured combiner efficiency is as high as 90 percent. In addition, at the design frequency of 32.05 GHz, error-free uncoded BPSK/QPSK data transmission at 8 megabits per second (Mbps), which is typical for deep space communications is demonstrated. Furthermore, QPSK data transmission at 622 Mbps is demonstrated with a low bit error rate of 2.4x10(exp -8), which exceeds the deep space state-of-the-art data rate transmission capability by more than two orders of magnitude. A potential application of the TWT combiner is in deep space communication systems for planetary exploration requiring transmitter power on the order of a kilowatt or higher.

  9. Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

    Directory of Open Access Journals (Sweden)

    Zhiqun Cheng

    2017-01-01

    Full Text Available The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed based on the traditional Class-F structure with all even harmonics and the third harmonic effectively controlled, respectively. Also the stepped-impedance matching method is applied to the third harmonic control network, which has a positive effect on the expansion bandwidth. CGH40025F power transistor is utilized to build the power amplifier working at 0.8 to 2.7 GHz, with the measured saturated output power 20–50 W, drain efficiency 52%–76%, and gain level above 10 dB. The second and the third harmonic suppression levels are maintained at −16 to −36 dBc and −16 to −33 dBc, respectively. The simulation and the measurement results of the proposed power amplifier show good consistency.

  10. Gain media edge treatment to suppress amplified spontaneous emission in a high power laser

    Science.gov (United States)

    Hackel, Lloyd A.; Soules, Thomas F.; Fochs, Scott N.; Rotter, Mark D.; Letts, Stephan A.

    2008-12-09

    A novel method and apparatus for suppressing ASE and parasitic oscillation modes in a high average power laser is introduced. By roughening one or more peripheral edges of a solid-state crystal or ceramic laser gain media and by bonding such edges using a substantially high index bonding elastomer or epoxy to a predetermined electromagnetic absorbing arranged adjacent to the entire outer surface of the peripheral edges of the roughened laser gain media, ASE and parasitic oscillation modes can be effectively suppressed.

  11. A look-up-table digital predistortion technique for high-voltage power amplifiers in ultrasonic applications.

    Science.gov (United States)

    Gao, Zheng; Gui, Ping

    2012-07-01

    In this paper, we present a digital predistortion technique to improve the linearity and power efficiency of a high-voltage class-AB power amplifier (PA) for ultrasound transmitters. The system is composed of a digital-to-analog converter (DAC), an analog-to-digital converter (ADC), and a field-programmable gate array (FPGA) in which the digital predistortion (DPD) algorithm is implemented. The DPD algorithm updates the error, which is the difference between the ideal signal and the attenuated distorted output signal, in the look-up table (LUT) memory during each cycle of a sinusoidal signal using the least-mean-square (LMS) algorithm. On the next signal cycle, the error data are used to equalize the signal with negative harmonic components to cancel the amplifier's nonlinear response. The algorithm also includes a linear interpolation method applied to the windowed sinusoidal signals for the B-mode and Doppler modes. The measurement test bench uses an arbitrary function generator as the DAC to generate the input signal, an oscilloscope as the ADC to capture the output waveform, and software to implement the DPD algorithm. The measurement results show that the proposed system is able to reduce the second-order harmonic distortion (HD2) by 20 dB and the third-order harmonic distortion (HD3) by 14.5 dB, while at the same time improving the power efficiency by 18%.

  12. Research of the mode instability threshold in high power double cladding Yb-doped fiber amplifiers

    International Nuclear Information System (INIS)

    Wang, Yanshan; Ma, Yi; Sun, Yinhong; Peng, Wanjing; Tang, Chun; Liu, Qinyong; Ke, Weiwei; Wang, Xiaojun

    2017-01-01

    We experimentally investigate the behavior of the mode instability (MI) threshold in the double cladding Yb-doped fiber amplifier when the amplifier is pumped by broad linewidth laser diodes and narrow linewidth laser diodes respectively. It is found that the MI threshold increases by 26% when the amplifier is pumped by the broad linewidth laser diodes. Experiment results show that the MI threshold is affected by the local heat load rather than the average or the total heat load. The calculation shows that the local heat deposit actually plays the key role to stimulate the MI behaviour. At the MI threshold position in the fiber, the local heat deposit also changes dramatically. The effect of the thermal conductivity on the MI threshold is also studied. Our investigation shows that the MI threshold increases from 1269 W to 1950 W when the thermal conductivity of the fiber amplifier is increased from 0.3 W/(m . K) to 5 W/(m . K). Through optimizing the pump linewidth and the cooling efficiency of the gain fiber, the MI threshold is doubled in our experiment. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Research of the mode instability threshold in high power double cladding Yb-doped fiber amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yanshan; Ma, Yi; Sun, Yinhong; Peng, Wanjing; Tang, Chun [Institute of Applied Electronics, CAEP, Mianyang, Sichuan (China); The Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang, Sichuan (China); Liu, Qinyong; Ke, Weiwei [Institute of Applied Physics and Computational Mathematics, CAEP, Beijing (China); Wang, Xiaojun [Institute of Applied Physics and Computational Mathematics, CAEP, Beijing (China); Technical Institute of Physics and Chemistry, CAS, Beijing (China)

    2017-08-15

    We experimentally investigate the behavior of the mode instability (MI) threshold in the double cladding Yb-doped fiber amplifier when the amplifier is pumped by broad linewidth laser diodes and narrow linewidth laser diodes respectively. It is found that the MI threshold increases by 26% when the amplifier is pumped by the broad linewidth laser diodes. Experiment results show that the MI threshold is affected by the local heat load rather than the average or the total heat load. The calculation shows that the local heat deposit actually plays the key role to stimulate the MI behaviour. At the MI threshold position in the fiber, the local heat deposit also changes dramatically. The effect of the thermal conductivity on the MI threshold is also studied. Our investigation shows that the MI threshold increases from 1269 W to 1950 W when the thermal conductivity of the fiber amplifier is increased from 0.3 W/(m . K) to 5 W/(m . K). Through optimizing the pump linewidth and the cooling efficiency of the gain fiber, the MI threshold is doubled in our experiment. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. A high power, continuous-wave, single-frequency fiber amplifier at 1091 nm and frequency doubling to 545.5 nm

    International Nuclear Information System (INIS)

    Stappel, M; Steinborn, R; Kolbe, D; Walz, J

    2013-01-01

    We present a high power single-frequency ytterbium fiber amplifier system with an output power of 30 W at 1091 nm. The amplifier system consists of two stages, a preamplifier stage in which amplified spontaneous emission is efficiently suppressed (>40 dB) and a high power amplifier with an efficiency of 52%. Two different approaches to frequency doubling are compared. We achieve 8.6 W at 545.5 nm by single-pass frequency doubling in a MgO-doped periodically poled stoichiometric LiTaO 3 crystal and up to 19.3 W at 545.5 nm by frequency doubling with a lithium-triborate crystal in an external enhancement cavity. (paper)

  15. High-gain (43 dB), high-power (40 W), highly efficient multipass amplifier at 995 nm in Yb:LiYF4

    Science.gov (United States)

    Manni, Jeffrey; Harris, Dennis; Fan, Tso Yee

    2018-06-01

    A simple implementation of a multipass amplifier along with the use of a cryogenic Yb:LiYF4 (YLF) gain medium has enabled the demonstration of a bulk amplifier with an unprecedented combination of large-signal gain (43 dB), efficiency (>50% optical), average output power (40 W) and a near-diffraction-limited output beam.

  16. Formation of nanosecond SBS-compressed pulses for pumping an ultra-high power parametric amplifier

    Science.gov (United States)

    Kuz’min, A. A.; Kulagin, O. V.; Rodchenkov, V. I.

    2018-04-01

    Compression of pulsed Nd : glass laser radiation under stimulated Brillouin scattering (SBS) in perfluorooctane is investigated. Compression of 16-ns pulses at a beam diameter of 30 mm is implemented. The maximum compression coefficient is 28 in the optimal range of laser pulse energies from 2 to 4 J. The Stokes pulse power exceeds that of the initial laser pulse by a factor of about 11.5. The Stokes pulse jitter (fluctuations of the Stokes pulse exit time from the compressor) is studied. The rms spread of these fluctuations is found to be 0.85 ns.

  17. Optimization of a high efficiency FEL amplifier

    International Nuclear Information System (INIS)

    Schneidmiller, E.A.; Yurkov, M.V.

    2014-10-01

    The problem of an efficiency increase of an FEL amplifier is now of great practical importance. Technique of undulator tapering in the post-saturation regime is used at the existing X-ray FELs LCLS and SACLA, and is planned for use at the European XFEL, Swiss FEL, and PAL XFEL. There are also discussions on the future of high peak and average power FELs for scientific and industrial applications. In this paper we perform detailed analysis of the tapering strategies for high power seeded FEL amplifiers. Application of similarity techniques allows us to derive universal law of the undulator tapering.

  18. Multi Carrier Modulation Audio Power Amplifier with Programmable Logic

    DEFF Research Database (Denmark)

    Christiansen, Theis; Andersen, Toke Meyer; Knott, Arnold

    2009-01-01

    While switch-mode audio power amplifiers allow compact implementations and high output power levels due to their high power efficiency, they are very well known for creating electromagnetic interference (EMI) with other electronic equipment. To lower the EMI of switch-mode (class D) audio power a...

  19. Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

    Science.gov (United States)

    Sullivan, Gerry

    2001-01-01

    For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

  20. Applying the Multisim Technology to Teach the Course of High Frequency Power Amplifier

    Science.gov (United States)

    Lv, Gang; Xue, Yuan-Sheng

    2011-01-01

    As one important professional base course in the electric information specialty, the course of "high frequency electronic circuit" has strong theoretical characteristic and abstract content. To enhance the teaching quality of this course, the computer simulation technology based on Multisim is introduced into the teaching of "high…

  1. Switching-mode Audio Power Amplifiers with Direct Energy Conversion

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    has been replaced with a high frequency AC link. When compared to the conventional Class D amplifiers with a separate DC power supply, the proposed single conversion stage amplifier provides simple and compact solution with better efficiency and higher level of integration, leading to reduced...

  2. High-power dual-wavelength external-Cavity diode laser based on tapered amplifier with tunable terahertz frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2011-01-01

    Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5:0 THz......, this is the highest output power from a dual-wavelength diode laser system operating with tunable terahertz frequency difference. © 2011 Optical Society of America....

  3. Cathode-follower power amplifier

    International Nuclear Information System (INIS)

    Giordano, S.; Puglisi, M.

    1983-01-01

    In circular accelerators and particularly in storage rings it is essential that the total impedance, as seen by the beam, be kept below some critical value. A model of the accelerating system was built using a single-ended cathode-follower amplifier driving a ferrite-loaded cavity. The system operated at 234.5 kHz with a peak output voltage of +-10 kV on the gap. The dynamic output impedance, as measured on the gap, was < 15 ohms

  4. Power Amplifier Design for E-band Wireless System Communications

    DEFF Research Database (Denmark)

    Hadziabdic, Dzenan; Krozer, Viktor; Johansen, Tom Keinicke

    2008-01-01

    E-band wireless communications will become important as the microwave backhaul for high-speed data transmission. One of the most critical components is the front-end power amplifier in this system. The paper analyzes different technologies with potential in the E-band frequency range and present...... a power amplifier design satisfying the E-band system specifications. The designed power amplifier achieves a maximum output power of ges 20 dBm with a state-of-the-art power-added efficiency of 15%. The power is realized using InP DHBT technology. To the best of our knowledge it is the highest output...... power and efficiency reported for an InP HBT power amplifier in this frequency range. The predicted power-added efficiency is higher than that of power amplifiers based on SiGe HBT and GaAs pHEMT technologies. The design shows the capabilities of InP DHBT for power amplifier applications...

  5. High-power free-electron laser amplifier using a scalloped electron beam and a two-stage wiggler

    Directory of Open Access Journals (Sweden)

    D. C. Nguyen

    2006-05-01

    Full Text Available High-power free-electron laser (FEL amplifiers present many practical design and construction problems. One such problem is possible damage to any optical beam control elements beyond the wiggler. The ability to increase the optical beam’s divergence angle after the wiggler, thereby reducing the intensity on the first optical element, is important to minimize such damage. One proposal to accomplish this optical beam spreading is to pinch the electron beam thereby focusing the radiation as well. In this paper, we analyze an approach that relies on the natural betatron motion to pinch the electron beam near the end of the wiggler. We also consider a step-tapered, two-stage wiggler to enhance the efficiency. The combination of a pinched electron beam and step-taper wiggler leads to additional optical guiding of the optical beam. This novel configuration is studied in simulation using the MEDUSA code. For a representative set of beam and wiggler parameters, we discuss (i the effect of the scalloped beam on the interaction in the FEL and on the focusing and propagation of the radiation, and (ii the efficiency enhancement in the two-stage wiggler.

  6. Multi Carrier Modulator for Switch-Mode Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Knott, Arnold; Pfaffinger, Gerhard; Andersen, Michael Andreas E.

    2008-01-01

    While switch-mode audio power amplifiers allow compact implementations and high output power levels due to their high power efficiency, they are very well known for creating electromagnetic interference (EMI) with other electronic equipment, in particular radio receivers. Lowering the EMI of swit...

  7. High-average-power 2 μm few-cycle optical parametric chirped pulse amplifier at 100 kHz repetition rate.

    Science.gov (United States)

    Shamir, Yariv; Rothhardt, Jan; Hädrich, Steffen; Demmler, Stefan; Tschernajew, Maxim; Limpert, Jens; Tünnermann, Andreas

    2015-12-01

    Sources of long wavelengths few-cycle high repetition rate pulses are becoming increasingly important for a plethora of applications, e.g., in high-field physics. Here, we report on the realization of a tunable optical parametric chirped pulse amplifier at 100 kHz repetition rate. At a central wavelength of 2 μm, the system delivered 33 fs pulses and a 6 W average power corresponding to 60 μJ pulse energy with gigawatt-level peak powers. Idler absorption and its crystal heating is experimentally investigated for a BBO. Strategies for further power scaling to several tens of watts of average power are discussed.

  8. Cusp Guns for Helical-Waveguide Gyro-TWTs of a High-Gain High-Power W-Band Amplifier Cascade

    Science.gov (United States)

    Manuilov, V. N.; Samsonov, S. V.; Mishakin, S. V.; Klimov, A. V.; Leshcheva, K. A.

    2018-02-01

    The evaluation, design, and simulations of two different electron guns generating the beams for W-band second cyclotron harmonic gyro-TWTs forming a high-gain powerful amplifier cascade are presented. The optimum configurations of the systems creating nearly axis-encircling electron beams having velocity pitch-factor up to 1.5, voltage/current of 40 kV/0.5 A, and 100 kV/13 A with acceptable velocity spreads have been found and are presented.

  9. Design considerations for RF power amplifiers demonstrated through a GSM/EDGE power amplifier module

    NARCIS (Netherlands)

    Baltus, P.G.M.; Bezooijen, van A.; Huijsing, J.H.; Steyaert, M.; Roermund, van A.H.M.

    2002-01-01

    This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity and efficiency, the PA environment, implementation is sues and technology. As an example a triple-band (900/1800/1900MHz) dual mode (GSMIEdge) power amplifier module is described

  10. Class D audio amplifiers for high voltage capacitive transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis

    of high volume, weight, and cost. High efficient class D amplifiers are now widely available offering power densities, that their linear counterparts can not match. Unlike the technology of audio amplifiers, the loudspeaker is still based on the traditional electrodynamic transducer invented by C.W. Rice......Audio reproduction systems contains two key components, the amplifier and the loudspeaker. In the last 20 – 30 years the technology of audio amplifiers have performed a fundamental shift of paradigm. Class D audio amplifiers have replaced the linear amplifiers, suffering from the well-known issues...... with the low level of acoustical output power and complex amplifier requirements, have limited the commercial success of the technology. Horn or compression drivers are typically favoured, when high acoustic output power is required, this is however at the expense of significant distortion combined...

  11. High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

    Directory of Open Access Journals (Sweden)

    Andreas Schmitt-Sody

    2008-01-01

    Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

  12. Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2012-01-01

    knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths......A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our...

  13. Development of high-power and high-energy 2 µm bulk solid-state lasers and amplifiers

    CSIR Research Space (South Africa)

    Koen, W

    2016-04-01

    Full Text Available 250 300 350 Pulse Repetition Frequency [Hz] P u l s e E n e r g y [ m J ] 0 1 2 3 4 5 6 7 8 9 10 A v e r a g e P o w e r [ W ] Osc Energy Amp Energy Osc average P Amp average P Figure 8: Output energy of the ring laser and amplifier...

  14. Introduction to RF power amplifier design and simulation

    CERN Document Server

    Eroglu, Abdullah

    2015-01-01

    Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiersDescribes the high-frequency model and transient characteristics of metal-oxide-semiconductor field-effect transistorsDetails activ

  15. A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Zheng Jia-Xin; Ma Xiao-Hua; Zhang Hong-He; Zhang Meng; Hao Yue; Lu Yang; Zhao Bo-Chao; Cao Meng-Yi

    2015-01-01

    A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f 0 and 2f 0 ). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz–5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance. (paper)

  16. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact,...

  17. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices....

  18. Experimental results of a sheet-beam, high power, FEL amplifier with application to magnetic fusion research

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, S.; Destler, W.W.; Granatstein, V.L. [Univ. of Maryland, College Park, MD (United States)] [and others

    1995-12-31

    The experimental study of sheet-beam FELs as candidate millimeter-wave sources for heating magnetic fusion plasmas has achieved a major milestone. In a proof-of-principle, pulsed experiment, saturated FEL amplifier operation was achieved with 250 kW of output power at 86 GHz. Input microwave power was 1 kW, beam voltage was 450 kV and beam current was 17 A. The planar wiggler had a peak value of 3.8 kG, a period of 0.96 cm and was 71 cm long. The linear gain of 30 dB, saturated gain of 24 dB and saturated efficiency of 3% all are in good agreement with theoretical prediction. Follow-on work would include development of a thermionic sheet-beam electron-gun compatible with CW FEL operation, adding a section of tapered wiggler to increase the output power to levels in excess of 1 megawatt, and increasing the FEL frequency.

  19. Preliminary design of experiment high power density laser beam interaction with plasmas and development of a cold cathode electron beam laser amplifier

    International Nuclear Information System (INIS)

    Mosavi, R.K.; Kohanzadeh, Y.; Taherzadeh, M.; Vaziri, A.

    1976-01-01

    This experiment is designed to produce plasma by carbon dioxide pulsed laser, to measure plasma parameters and to study the interaction of the produced plasma with intense laser beams. The objectives of this experiment are the following: 1. To set up a TEA CO 2 laser oscillator and a cold cathode electron beam laser amplifier together as a system, to produce high energy optical pulses of short duration. 2. To achieve laser intensities of 10 11 watt/cm 2 or more at solid targets of polyethylene (C 2 H 4 )n, lithium hydride (LiH), and lithium deuteride in order to produce high temperature plasmas. 3. To design and develop diagnostic methods for studies of laser-induced plasmas. 4. To develop a high power CO 2 laser amplifier for the purpose of upgrading the optical energy delivered to the targets

  20. Analog circuit design designing high performance amplifiers

    CERN Document Server

    Feucht, Dennis

    2010-01-01

    The third volume Designing High Performance Amplifiers applies the concepts from the first two volumes. It is an advanced treatment of amplifier design/analysis emphasizing both wideband and precision amplification.

  1. F-band, High-Efficiency GaN Power Amplifier for the Scanning Microwave Limb Sounder and SOFIA, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop a 4-watt Solid-State Power Amplifier (SSPA) operating at F-band (106-114 GHz) with a power-added efficiency (PAE) of greater...

  2. Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Bai Xianchen; Zhang Jiande; Yang Jianhua; Jin Zhenxing [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2012-12-15

    Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of {approx}22 MW, an output power of {approx}230 MW with the power gain of {approx}10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than {+-}15 Degree-Sign in a single shot, and phase jitter of {+-}11 Degree-Sign is obtained within a series of shots with duration of about 40 ns.

  3. Phase locking of an S-band wide-gap klystron amplifier with high power injection driven by a relativistic backward wave oscillator

    Science.gov (United States)

    Bai, Xianchen; Zhang, Jiande; Yang, Jianhua; Jin, Zhenxing

    2012-12-01

    Theoretical analyses and preliminary experiments on the phase-locking characteristics of an inductively loaded 2-cavity wide-gap klystron amplifier (WKA) with high power injection driven by a GW-class relativistic backward wave oscillator (RBWO) are presented. Electric power of the amplifier and oscillator is supplied by a single accelerator being capable of producing dual electron beams. The well phase-locking effect of the RBWO-WKA system requires the oscillator have good frequency reproducibility and stability from pulse to pulse. Thus, the main switch of the accelerator is externally triggered to stabilize the diode voltage and then the working frequency. In the experiment, frequency of the WKA is linearly locked by the RBWO. With a diode voltage of 530 kV and an input power of ˜22 MW, an output power of ˜230 MW with the power gain of ˜10.2 dB is obtained from the WKA. As the main switch is triggered, the relative phase difference between the RBWO and the WKA is less than ±15° in a single shot, and phase jitter of ±11° is obtained within a series of shots with duration of about 40 ns.

  4. Spatial Power Combining Amplifier for Ground and Flight Applications

    Science.gov (United States)

    Velazco, J. E.; Taylor, M.

    2016-11-01

    Vacuum-tube amplifiers such as klystrons and traveling-wave tubes are the workhorses of high-power microwave radiation generation. At JPL, vacuum tubes are extensively used in ground and flight missions for radar and communications. Vacuum tubes use electron beams as the source of energy to achieve microwave power amplification. Such electron beams operate at high kinetic energies and thus require high voltages to function. In addition, vacuum tubes use compact cavity and waveguide structures that hold very intense radio frequency (RF) fields inside. As the operational frequency is increased, the dimensions of these RF structures become increasingly smaller. As power levels and operational frequencies are increased, the highly intense RF fields inside of the tubes' structures tend to arc and create RF breakdown. In the case of very high-power klystrons, electron interception - also known as body current - can produce thermal runaway of the cavities that could lead to the destruction of the tube. The high voltages needed to power vacuum tubes tend to require complicated and cumbersome power supplies. Consequently, although vacuum tubes provide unmatched high-power microwaves, they tend to arc, suffer from thermal issues, and require failure-prone high-voltage power supplies. In this article, we present a new concept for generating high-power microwaves that we refer to as the Spatial Power Combining Amplifier (SPCA). The SPCA is very compact, requires simpler, lower-voltage power supplies, and uses a unique power-combining scheme wherein power from solid-state amplifiers is coherently combined. It is a two-port amplifier and can be used inline as any conventional two-port amplifier. It can deliver its output power to a coaxial line, a waveguide, a feed, or to any microwave load. A key feature of this new scheme is the use of higher-order-mode microwave structures to spatially divide and combine power. Such higher-order-mode structures have considerably larger cross

  5. 5 Watt GaN HEMT Power Amplifier for LTE

    Directory of Open Access Journals (Sweden)

    K. Niotaki

    2014-04-01

    Full Text Available This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz.

  6. Results of tests of the X2274 high power tetrode in a JT-60 110 to 130 MHz ICRH amplifier

    International Nuclear Information System (INIS)

    Remsen, D.B.; Loring, C.M.; McNees, S.G.; Moriyama, S.; Ogawa, Y.; Anno, K.; Fujii, T.; Terakado, M.; Kogure, S.; Nagashima, T.; Ohta, M.

    1990-09-01

    This paper reports the results of tests of the newly developed Varian EIMAC X2274 in the JAERI JT-60 ICRH system at pulse lengths up to 6 seconds at 131 MHz. It is our belief that these tests achieved the highest long pulse, or CW, power that has ever been delivered by a single power grid tube at frequencies above 100 MHz. Varian's EIMAC X2274, developed in conjunction with General Atomics and the US Department of Energy, uses an improved pyrolytic graphite grid configuration which provides significantly better vhf performance than the grids of the X2242 tetrode which was tested in this system in 1989. The EIMAC X2274 combines the improved grids with a new anode design which reduces the required water flow approximately 50% and increases the maximum anode dissipation 80%. All tests were performed at 131 MHz, the system's highest operating frequency. Tests of both prototype EIMAC X2274s produced essentially identical results. The basic objectives of these tests were: to demonstrate that the system with the EIMAC X2274 can reliably produce 1.5 MW at 130 MHz at 5 second pulse lengths for the JT-60U tokamak and to collect data for use in the design of future high power ICRH systems. In these tests the tube and system produced up to 1.7 MW at pulse lengths up to 5.4 seconds: i.e, the EIMAC X2274 in this system can easily meet Objective 1. The remainder of this paper shows that Objective 2 has been fulfilled. In addition to the high power tests, operational range tests were performed under variable VSWR conditions. Unlike the EIMAC X2242 tests were rf current heating of the screen grid limited output power, system parameters, rather than tube parameters, limited the output power in the high power tests. Operational range tests were conducted at output power levels chosen to be well within the system's anode cooling capability

  7. Self-oscillating modulators for direct energy conversion audio power amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    Direct energy conversion audio power amplifier represents total integration of switching-mode power supply and Class D audio power amplifier into one compact stage, achieving high efficiency, high level of integration, low component count and eventually low cost. This paper presents how self-oscillating modulators can be used with the direct switching-mode audio power amplifier to improve its performance by providing fast hysteretic control with high power supply rejection ratio, open-loop stability and high bandwidth. Its operation is thoroughly analyzed and simulated waveforms of a prototype amplifier are presented. (au)

  8. Demonstration of Multi-Gbps Data Rates at Ka-Band Using Software-Defined Modem and Broadband High Power Amplifier for Space Communications

    Science.gov (United States)

    Simons, Rainee N.; Wintucky, Edwin G.; Landon, David G.; Sun, Jun Y.; Winn, James S.; Laraway, Stephen; McIntire, William K.; Metz, John L.; Smith, Francis J.

    2011-01-01

    The paper presents the first ever research and experimental results regarding the combination of a software-defined multi-Gbps modem and a broadband high power space amplifier when tested with an extended form of the industry standard DVB-S2 and LDPC rate 9/10 FEC codec. The modem supports waveforms including QPSK, 8-PSK, 16-APSK, 32-APSK, 64-APSK, and 128-QAM. The broadband high power amplifier is a space qualified traveling-wave tube (TWT), which has a passband greater than 3 GHz at 33 GHz, output power of 200 W and efficiency greater than 60 percent. The modem and the TWTA together enabled an unprecedented data rate at 20 Gbps with low BER of 10(exp -9). The presented results include a plot of the received waveform constellation, BER vs. E(sub b)/N(sub 0) and implementation loss for each of the modulation types tested. The above results when included in an RF link budget analysis show that NASA s payload data rate can be increased by at least an order of magnitude (greater than 10X) over current state-of-practice, limited only by the spacecraft EIRP, ground receiver G/T, range, and available spectrum or bandwidth.

  9. Generation of high-energy sub-20 fs pulses tunable in the 250-310 nm region by frequency doubling of a high-power noncollinear optical parametric amplifier.

    Science.gov (United States)

    Beutler, Marcus; Ghotbi, Masood; Noack, Frank; Brida, Daniele; Manzoni, Cristian; Cerullo, Giulio

    2009-03-15

    We report on the generation of powerful sub-20 fs deep UV pulses with 10 microJ level energy and broadly tunable in the 250-310 nm range. These pulses are produced by frequency doubling a high-power noncollinear optical parametric amplifier and compressed by a pair of MgF2 prisms to an almost transform-limited duration. Our results provide a power scaling by an order of magnitude with respect to previous works.

  10. Amplified spontaneous emissions in a high-gain laser amplifier

    International Nuclear Information System (INIS)

    Osada, Hidenori; Gamo, Hideya.

    1978-01-01

    The gain and line-narrowing of the amplified spontaneous emissions(ASE) in a partially homogeneous high-gain Xe 3.51 μm laser amplifier were studied theoretically and experimentally with emphasis of saturation effect. The unidirectionally travelling ASE was generated by conveniently using optical isolators and used as a broadband radiation source. It has properties of 10 μW/mm 2 in intensity with fluctuation of less than 1% in 5 hours, 43.5 MHz of the linewidth and 1.0 x 10 -3 radians of beam divergence. The measured saturation intensity was 4.85 μW/mm 2 and a small signal gain was 0.1 cm -1 . The theoretical prediction of the line-narrowing shows reasonablly good agreement with the measured one. (author)

  11. Self-oscillating modulators for direct energy conversion audio power amplifiers

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    Direct energy conversion audio power amplifier represents total integration of switching-mode power supply and Class D audio power amplifier into one compact stage, achieving high efficiency, high level of integration, low component count and eventually low cost. This paper presents how self-oscillating...

  12. Theoretical study of the effect of pump wavelength drift on mode instability in a high-power fiber amplifier

    Science.gov (United States)

    Liu, Yakun; Tao, Rumao; Su, Rongtao; Wang, Xiaolin; Ma, Pengfei; Zhang, Hanwei; Zhou, Pu; Si, Lei

    2018-04-01

    This paper presents an investigation of the effect of pump wavelength drift on the threshold of mode instability (MI) in high-power ytterbium-doped fiber lasers. By using a semi-analytical model, we study the effects of pump wavelength drift with a central pump wavelength around 976 nm and 915 nm, respectively. The influences of the pump absorption coefficient and total pump absorption are considered simultaneously. The results indicate that the effect of pump wavelength drift around 976 nm is stronger than that around 915 nm. For more efficient suppression of MI by shifting the pump wavelength, efficient absorption of pump power is required. The MI thresholds for fibers with different total pump absorptions and cladding diameters are compared. When the total pump absorption is increased, the gain saturation is enhanced, which results in the MI being mitigated more effectively and being more sensitive to pump wavelength drift. The MI threshold in gain fibers with larger inner cladding diameter is higher but more dependent upon pump wavelength. The results of this work can help in optimizing the pump wavelength and fiber parameters and suppressing MI in high-power fiber lasers.

  13. Derivation and Analysis of a Low-Cost, High-performance Analogue BPCM Control Scheme for Class-D Audio Power Amplifiers

    OpenAIRE

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael A. E.

    2005-01-01

    This paper presents a low-cost analogue control scheme for class-D audio power amplifiers. The scheme is based around bandpass current-mode (BPCM) control, and provides ample stability margins and low distortion over a wide range of operating conditions. Implementation is very simple and does not require the use of operational amplifiers. Small-signal behavior of the controller is accurately predicted, and design is carried out using standard transfer function based linear control methodology...

  14. Power scaling of supercontinuum seeded megahertz-repetition rate optical parametric chirped pulse amplifiers.

    Science.gov (United States)

    Riedel, R; Stephanides, A; Prandolini, M J; Gronloh, B; Jungbluth, B; Mans, T; Tavella, F

    2014-03-15

    Optical parametric chirped-pulse amplifiers with high average power are possible with novel high-power Yb:YAG amplifiers with kW-level output powers. We demonstrate a compact wavelength-tunable sub-30-fs amplifier with 11.4 W average power with 20.7% pump-to-signal conversion efficiency. For parametric amplification, a beta-barium borate crystal is pumped by a 140 W, 1 ps Yb:YAG InnoSlab amplifier at 3.25 MHz repetition rate. The broadband seed is generated via supercontinuum generation in a YAG crystal.

  15. Modeling and design techniques for RF power amplifiers

    CERN Document Server

    Raghavan, Arvind; Laskar, Joy

    2008-01-01

    The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits.

  16. GaN-based Power amplifiers for microwave applications

    Directory of Open Access Journals (Sweden)

    Jorge Julián Moreno-Rubio

    2016-01-01

    Full Text Available This paper presents a discussion about the design strategies of different kind of power amplifiers for RF/Microwave appli- cations, such as the tuned load power amplifier, class F, class F-1 and Doherty. Furthermore, it is shown the continuous wave characterization of the amplifiers above mentioned. A comparison between the obtained results, in terms of gain, efficiency and output power is presented.

  17. 47 CFR 2.815 - External radio frequency power amplifiers.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 1 2010-10-01 2010-10-01 false External radio frequency power amplifiers. 2... AND RADIO TREATY MATTERS; GENERAL RULES AND REGULATIONS Marketing of Radio-frequency Devices § 2.815 External radio frequency power amplifiers. (a) As used in this part, an external radio frequency power...

  18. A 20 Mfps high frame-depth CMOS burst-mode imager with low power in-pixel NMOS-only passive amplifier

    Science.gov (United States)

    Wu, L.; San Segundo Bello, D.; Coppejans, P.; Craninckx, J.; Wambacq, P.; Borremans, J.

    2017-02-01

    This paper presents a 20 Mfps 32 × 84 pixels CMOS burst-mode imager featuring high frame depth with a passive in-pixel amplifier. Compared to the CCD alternatives, CMOS burst-mode imagers are attractive for their low power consumption and integration of circuitry such as ADCs. Due to storage capacitor size and its noise limitations, CMOS burst-mode imagers usually suffer from a lower frame depth than CCD implementations. In order to capture fast transitions over a longer time span, an in-pixel CDS technique has been adopted to reduce the required memory cells for each frame by half. Moreover, integrated with in-pixel CDS, an in-pixel NMOS-only passive amplifier alleviates the kTC noise requirements of the memory bank allowing the usage of smaller capacitors. Specifically, a dense 108-cell MOS memory bank (10fF/cell) has been implemented inside a 30μm pitch pixel, with an area of 25 × 30μm2 occupied by the memory bank. There is an improvement of about 4x in terms of frame depth per pixel area by applying in-pixel CDS and amplification. With the amplifier's gain of 3.3, an FD input-referred RMS noise of 1mV is achieved at 20 Mfps operation. While the amplification is done without burning DC current, including the pixel source follower biasing, the full pixel consumes 10μA at 3.3V supply voltage at full speed. The chip has been fabricated in imec's 130nm CMOS CIS technology.

  19. Accurate expressions for the power efficiency of a class-D power amplifier in a limit-cycle transmitter configuration

    NARCIS (Netherlands)

    Sarkeshi, M.; Mahmoudi, R.; Roermund, van A.H.M.

    2009-01-01

    Limit-cycle based, self-oscillating amplifiers are promising candidates for linear amplification of complex signals with high peak-to-average ratio, while maintaining high power efficiency. Limit-cycle transmitters employ switch class-D power amplifiers in order to achieve high Efficiency. In this

  20. Multilevel tracking power supply for switch-mode audio power amplifiers

    DEFF Research Database (Denmark)

    Iversen, Niels Elkjær; Lazarevic, Vladan; Vasic, Miroslav

    2018-01-01

    to the power supply in order to improve efficiency. A 100 W prototype system was designed. Measured results show that systems employing envelope tracking can improve system efficiency from 2% to 12%, i.e. a factor of 6. The temperature rise is strongly reduced, especially for the switching power MOSFETs where......Switch-mode technology is the common choice for high efficiency audio power amplifiers. The dynamic nature of real audio reduces efficiency as less continuous output power can be achieved. Based on methods used for RF amplifiers this paper proposes to employ envelope tracking techniques...

  1. Power Efficiency Improvements through Peak-to-Average Power Ratio Reduction and Power Amplifier Linearization

    Directory of Open Access Journals (Sweden)

    Zhou G Tong

    2007-01-01

    Full Text Available Many modern communication signal formats, such as orthogonal frequency-division multiplexing (OFDM and code-division multiple access (CDMA, have high peak-to-average power ratios (PARs. A signal with a high PAR not only is vulnerable in the presence of nonlinear components such as power amplifiers (PAs, but also leads to low transmission power efficiency. Selected mapping (SLM and clipping are well-known PAR reduction techniques. We propose to combine SLM with threshold clipping and digital baseband predistortion to improve the overall efficiency of the transmission system. Testbed experiments demonstrate the effectiveness of the proposed approach.

  2. Performance Analysis of Multiradio Transmitter with Polar or Cartesian Architectures Associated with High Efficiency Switched-Mode Power Amplifiers (invited paper

    Directory of Open Access Journals (Sweden)

    F. Robert

    2010-12-01

    Full Text Available This paper deals with wireless multi-radio transmitter architectures operating in the frequency band of 800 MHz – 6 GHz. As a consequence of the constant evolution in the communication systems, mobile transmitters must be able to operate at different frequency bands and modes according to existing standards specifications. The concept of a unique multiradio architecture is an evolution of the multistandard transceiver characterized by a parallelization of circuits for each standard. Multi-radio concept optimizes surface and power consumption. Transmitter architectures using sampling techniques and baseband ΣΔ or PWM coding of signals before their amplification appear as good candidates for multiradio transmitters for several reasons. They allow using high efficiency power amplifiers such as switched-mode PAs. They are highly flexible and easy to integrate because of their digital nature. But when the transmitter efficiency is considered, many elements have to be taken into account: signal coding efficiency, PA efficiency, RF filter. This paper investigates the interest of these architectures for a multiradio transmitter able to support existing wireless communications standards between 800 MHz and 6 GHz. It evaluates and compares the different possible architectures for WiMAX and LTE standards in terms of signal quality and transmitter power efficiency.

  3. Derivation and Analysis of a Low-Cost, High-performance Analogue BPCM Control Scheme for Class-D Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael A. E.

    2005-01-01

    This paper presents a low-cost analogue control scheme for class-D audio power amplifiers. The scheme is based around bandpass current-mode (BPCM) control, and provides ample stability margins and low distortion over a wide range of operating conditions. Implementation is very simple and does...

  4. W-band Solid State Power Amplifier for Remote Sensing Radars, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

  5. W-Band Solid State Power Amplifier for Remote Sensing Radars, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — High power, compact, reliable and affordable power amplifiers operating in the W-band (94 GHz region) are critical to realizing transmitters for many NASA missions...

  6. Amplified spontaneous emission and thermal management on a high average-power diode-pumped solid-state laser - the Lucia laser system

    International Nuclear Information System (INIS)

    Albach, D.

    2010-01-01

    The development of the laser triggered the birth of numerous fields in both scientific and industrial domains. High intensity laser pulses are a unique tool for light/matter interaction studies and applications. However, current flash-pumped glass-based systems are inherently limited in repetition-rate and efficiency. Development within recent years in the field of semiconductor lasers and gain media drew special attention to a new class of lasers, the so-called Diode Pumped Solid State Laser (DPSSL). DPSSLs are highly efficient lasers and are candidates of choice for compact, high average-power systems required for industrial applications but also as high-power pump sources for ultra-high intense lasers. The work described in this thesis takes place in the context of the 1 kilowatt average-power DPSSL program Lucia, currently under construction at the 'Laboratoire d'Utilisation des Laser Intenses' (LULI) at the Ecole Polytechnique, France. Generation of sub-10 nanosecond long pulses with energies of up to 100 joules at repetition rates of 10 hertz are mainly limited by Amplified Spontaneous Emission (ASE) and thermal effects. These limitations are the central themes of this work. Their impact is discussed within the context of a first Lucia milestone, set around 10 joules. The developed laser system is shown in detail from the oscillator level to the end of the amplification line. A comprehensive discussion of the impact of ASE and thermal effects is completed by related experimental benchmarks. The validated models are used to predict the performances of the laser system, finally resulting in a first activation of the laser system at an energy level of 7 joules in a single-shot regime and 6.6 joules at repetition rates up to 2 hertz. Limitations and further scaling approaches are discussed, followed by an outlook for the further development. (author) [fr

  7. A real-time control system architecture for industrial power amplifiers

    NARCIS (Netherlands)

    Qureshi, F.; Spinu, V.; Wijnands, C.G.E.; Lazar, M.

    2013-01-01

    Power amplifiers are a highly important component in a range of industrial applications, such as, servo-drives, magnetic resonance imaging, energy systems, and audio. The control system for power amplifiers should satisfy a range of requirements, e.g., offset free tracking, stability margins, and

  8. A high-efficiency superconductor distributed amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Herr, Q P, E-mail: quentin.herr@ngc.co [Northrop Grumman Corporation, 7323 Aviation Boulevard, Baltimore, MD 21240 (United States)

    2010-02-15

    A superconductor output amplifier that converts single-flux-quantum signals to a non-return-to-zero pattern is reported using a twelve-stage distributed amplifier configuration. The output amplitude is measured to be 1.75 mV over a wide bias current range of {+-} 12%. The bit error rate is measured using a Delta-Sigma data pattern to be less than 1 x 10{sup -9} at 10 Gb s{sup -1} per channel. Analysis of the eye diagram suggests that the actual bit error rate may be much lower. The amplifier has power efficiency of 12% neglecting the termination resistor, which may be eliminated from the circuit with a small modification. (rapid communication)

  9. A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n

    International Nuclear Information System (INIS)

    Cui Jie; Chen Lei; Kang Chunlei; Shi Jia; Zhang Xuguang; Ai Baoli; Liu Yi

    2013-01-01

    A three-stage 4.8–6 GHz monolithic power amplifier (PA) compatible with IEEE 802.11a/n designed based on an advanced 2 μm InGaP/GaAs hetero-junction bipolar transistor (HBT) process is presented. The PA integrates input matching and closed-loop power control circuits on chip. Under 3.3 V DC bias, the amplifier achieves a ∼31 dB small signal gain, excellent wide band input and output matching among overall 1.2 GHz bandwidth, and up to 24.5 dBm linear output power below EVM 3% with IEEE 802.11a 64QAM OFDM input signal. (semiconductor integrated circuits)

  10. A Power Efficient Audio Amplifier Combining Switching and Linear Techniques

    NARCIS (Netherlands)

    van der Zee, Ronan A.R.; van Tuijl, Adrianus Johannes Maria

    1998-01-01

    Integrated Class D audio amplifiers are very power efficient, but require an external filter which prevents further integration. Also due to this filter, large feedback factors are hard to realise, so that the load influences the distortion- and transfer characteristics. The amplifier presented in

  11. PHEMT Distributed Power Amplifier Adopting Broadband Impedance Transformer

    DEFF Research Database (Denmark)

    Narendra, K.; Limiti, E.; Paoloni, C.

    2013-01-01

    A non-uniform drain line distributed power amplifier (DPA) employing a broadband impedance transformer is presented. The DPA is based on GaAs PHEMT technology. The impedance transformer employs asymmetric coupled lines and transforms a low output impedance of the amplifier to a standard 50 Ω...

  12. Empirical multichannel power consumption model for erbium-doped fiber amplifiers

    DEFF Research Database (Denmark)

    Saldaña Cercos, Silvia; de Paiva, Getulio E. R.; Argentato, Marcio Colazza

    2015-01-01

    In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified simu......-users, it is relevant to study channel number dependent power consumption for devising EDFA power efficient control and design.......In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified...... simultaneously contributes significantly, up to 48%, to the total power consumption due to the circuitry used for controlling the EDFA. As the number of simultaneous amplified WDM channels in high capacity long and medium reach transmission links reflects closely traffic patterns generated by end...

  13. Modelling the competition between photo-darkening and photo-bleaching effects in high-power ytterbium-doped fibre amplifiers

    Science.gov (United States)

    Jolly, A.; Vinçont, C.; Pierre, Ch.; Boullet, J.

    2017-08-01

    We propose an innovative, fully space-time model to take into account the seed-dependent nature of ageing penalties in high-power ytterbium-doped fibre amplifiers. Ageing is shown to be based on the on-going competition between photo-darkening and photo-bleaching phenomena. Our approach is based on the natural interplay between the excited states of co-existing ytterbium pairs and colour centres in highly doped fibres, in the presence of thermal coupling between the closely spaced excited states. As initiated from IR photons, the excitation of colour centres up to the UV band is supposed to be governed by multi-photon absorption. The interactions of interest in the kinetics of photo-bleaching then take the form of highly efficient charge transfers, which imply the reduction of some fraction of the basically trivalent ions to their divalent state. Due to the activation of ytterbium pairs by means of energy transfer up-conversion, these interactions get more and more effective at elevated operating powers. Computational results using these principles actually help to fit our experimental data regarding seeding effects, as well as fully generic trends already evidenced in the literature. This gives a fine demonstration for the need to discriminate co-active pump and signal contributions. Our self-consistent, still simplified model then consists of a valuable tool to help for a deeper understanding of the ageing issues. Furthermore, considering higher-order ytterbium aggregates, this should open new routes towards more comprehensive models.

  14. A 500-600 MHz GaN power amplifier with RC-LC stability network

    Science.gov (United States)

    Ma, Xinyu; Duan, Baoxing; Yang, Yintang

    2017-08-01

    A 500-600 MHz high-efficiency, high-power GaN power amplifier is designed and realized on the basis of the push-pull structure. The RC-LC stability network is proposed and applied to the power amplifier circuit for the first time. The RC-LC stability network can significantly reduce the high gain out the band, which eliminates the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5 dBm (700 W) output power with a 17 dB gain and 85% PAE at 500-600 MHz, 300 μs, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad. Project supported by the National Key Basic Research Program of China (No. 2014CB339901).

  15. Broadband 0.25-um Gallium Nitride (GaN) Power Amplifier Designs

    Science.gov (United States)

    2017-08-14

    networking, and sensor systems of interest to Department of Defense applications, particularly for next-generation radar systems. Broadband, efficient, high...simulations of MMIC (3–6 GHz, 28 V/180 mA) 1.75-mm HEMT power amplifier ............................................... 13 Fig. 20 Simple schematic...design simple , a single 1.75-mm high-electron-mobility transistor (HEMT) was used for a preliminary ideal design of the broadband power amplifier

  16. Minimizing Crosstalk in Self Oscillating Switch Mode Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Knott, Arnold; Ploug, Rasmus Overgaard

    2012-01-01

    a method to minimize this phenomenon by improving the integrity of the various power distribution systems of the amplifier. The method is then applied to an amplifier built for this investigation. The results show that the crosstalk is suppressed with 30 dB, but is not entirely eliminated......The varying switching frequencies of self oscillating switch mode audio amplifiers have been known to cause interchannel intermodulation disturbances in multi channel configurations. This crosstalk phenomenon has a negative impact on the audio performance. The goal of this paper is to present...

  17. The design of high performance weak current integrated amplifier

    International Nuclear Information System (INIS)

    Chen Guojie; Cao Hui

    2005-01-01

    A design method of high performance weak current integrated amplifier using ICL7650 operational amplifier is introduced. The operating principle of circuits and the step of improving amplifier's performance are illustrated. Finally, the experimental results are given. The amplifier has programmable measurement range of 10 -9 -10 -12 A, automatic zero-correction, accurate measurement, and good stability. (authors)

  18. Broadband generation by multiple four-wave mixing process due to ASE Q-switching in high-power double-clad ytterbium-doped fiber amplifier

    Science.gov (United States)

    Chowdhury, Sourav D.; Shekhar, Nishant; Saha, Maitreyee; Sen, Ranjan; Pal, Mrinmay

    2014-11-01

    Broadband output from 1060nm to 1700nm and cascaded four-wave mixing generated red light pulsing is observed in a fiber amplifier set up consisting of a 5.5m double clad, double D shaped Ytterbium doped fiber, a single clad passive fiber for excess pump absorption and a splitter, both with and without a CW seed. Self-pulsing occurs from ASE due to passive Q-switching by saturable absorption effect of the active fiber and also depends on splice loss. The pulses generate broadband output by multiple four-wave mixing process with maximum broadening efficiency near 1300nm which is the zero dispersion wavelength for silica fiber. Pulses traveling both in forward and backward direction have enough peak power and energy to damage splice points and fiber components. When seeded the self-pulsing and broadband generation is often suppressed but again generate at increased pump powers.

  19. Development of 350 MHz/1000 Watt intermediate power amplifier for 400 keV RFQ accelerator

    International Nuclear Information System (INIS)

    Pande, M.M.; Patel, N.R.; Shinde, K.R.; Rao, M.K.V.; Handu, V.K.

    2005-01-01

    Two numbers of high power RF systems, each delivering around 35 to 40 kW of power at 350 MHz are being developed in BARC. These High Power Amplifiers (HPA) cater to the total need of 70 kW of RF power required by the 400 keV (Deuterium) RFQ accelerator. This RFQ will replace the existing 400 keV DC accelerator of 14 MeV Neutron Generator. The RFQ will accelerate a deuterium beam from 50 keV to 400 keV to impinge upon a tritium target inside a sub critical assembly. Each of these 35 / 40 KW HPA requires a drive power of around 1000 / 1500 Watt respectively. Hence a intermediate power amplifier (IPA) bas been designed to deliver the power of 1000 Watt at the rate of 350 MHz. The paper describes the development of this amplifier

  20. A 30 KW RF power amplifier for the RFQ accelerator (Paper No. CP 27)

    International Nuclear Information System (INIS)

    Luktuke, R.D.; Garud, A.N.; Murthy, P.N.K.; Sethi, R.C.

    1990-01-01

    A radio frequency quadrupole (RFQ) accelerator, to accelerate deuterons to an energy of 150 keV with beam current of 20 mA, has been designed and is under construction. This accelerator needs approximately 30 kW of RF power to generate the desired voltage of 55 kV on the electrodes, at a frequency of 45 MHz. The power amplifier is designed with four stages of RF amplification using vacuum tubes. The first two stages are built with the tubes 6146 and BEL 250 CX, to deliver about 100 watts power to the grid circuit of the pre driver. The pre driver (EIMAC 5 CX 1500 A) and the driver (BEL 4000 CX) give an output power of about 5kW, at the grid of the high power amplifier. All the four tubes operate in class A/AB mode. The high power amplifier has been designed and is being built around the BEL power tetrode tube CQK-50-2. The output from the high power amplifier is fed to the RFQ, via a matching network to tranform the plate impedance to 50 ohm loop impedeance at the RFQ. The paper presents the design aspects of the high power amplifier, matching network and the results obtained for the earlier stages. (author). 3 refs., 3 tabs., 2 figs

  1. Mode control in a high-gain relativistic klystron amplifier

    Science.gov (United States)

    Li, Zheng-Hong; Zhang, Hong; Ju, Bing-Quan; Su, Chang; Wu, Yang

    2010-05-01

    Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes' excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 105 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.

  2. Design, construction and test of RF solid state power amplifier for IRANCYC-10

    Science.gov (United States)

    Azizi, H.; Dehghan, M.; Abbasi Davani, F.; Ghasemi, F.

    2018-03-01

    In this paper, design, simulation and construction of a high power amplifier to provide the required power of a cyclotron accelerator (IRANCYC-10) is presented step-by-step. The Push-Pull designed amplifier can generate 750 W at the operating frequency of 71 MHz continous wave (CW). In this study, achieving the best efficiency of the amplifier, as well as reducing overall volume using baluns, were two important goals. The new offered water-cooled heat sink was used for cooling the amplifier which increases the operating life of the transistor. The gain and PAE of the SSPA were obtained 20 dB and 77.7%, respectively. The simulated and measured RF results are in good agreement with each other. The results show that, using an RF transformer in matching impedance of matching networks, it causes a smaller size and also a better amplifier performance.

  3. Design And Construction Of 300W Audio Power Amplifier For Classroom

    Directory of Open Access Journals (Sweden)

    Shune Lei Aung

    2015-07-01

    Full Text Available Abstract This paper describes the design and construction of 300W audio power amplifier for classroom. In the construction of this amplifier microphone preamplifier tone preamplifier equalizer line amplifier output power amplifier and sound level indicator are included. The output power amplifier is designed as O.C.L system and constructed by using Class B among many types of amplifier classes. There are two types in O.C.L system quasi system and complementary system. Between them the complementary system is used in the construction of 300W audio power amplifier. The Multisim software is utilized for the construction of audio power amplifier.

  4. Design and Modeling of RF Power Amplifiers with Radial Basis Function Artificial Neural Networks

    OpenAIRE

    Ali Reza Zirak; Sobhan Roshani

    2016-01-01

    A radial basis function (RBF) artificial neural network model for a designed high efficiency radio frequency class-F power amplifier (PA) is presented in this paper. The presented amplifier is designed at 1.8 GHz operating frequency with 12 dB of gain and 36 dBm of 1dB output compression point. The obtained power added efficiency (PAE) for the presented PA is 76% under 26 dBm input power. The proposed RBF model uses input and DC power of the PA as inputs variables and considers output power a...

  5. Current-Driven Switch-Mode Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Knott, Arnold; Buhl, Niels Christian; Andersen, Michael A. E.

    2012-01-01

    The conversion of electrical energy into sound waves by electromechanical transducers is proportional to the current through the coil of the transducer. However virtually all audio power amplifiers provide a controlled voltage through the interface to the transducer. This paper is presenting...... a switch-mode audio power amplifier not only providing controlled current but also being supplied by current. This results in an output filter size reduction by a factor of 6. The implemented prototype shows decent audio performance with THD + N below 0.1 %....

  6. SiGe HBTs Optimization for Wireless Power Amplifier Applications

    Directory of Open Access Journals (Sweden)

    Pierre-Marie Mans

    2010-01-01

    Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

  7. Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency

    Science.gov (United States)

    2017-03-01

    QPSK LTE waveform, the ACPR1improved by ~10 dBc at average output power of 23 dBm, without digital pre-distortion. Keywords: GaN, linear amplifiers...wideband amplifier, OIP3, LTE Introduction RF communications with spectral efficiency utilizes complex modulation schemes that require amplifier...wideband amplifiers remain. In this paper, we report on the measured CW performance of a multi-octave (100 MHz ‒ 8 GHz) GaN MMIC NDPA fabricated with

  8. High-performace cladding-pumped erbium-doped fibre laser and amplifier

    International Nuclear Information System (INIS)

    Kotov, L V; Likhachev, M E; Bubnov, M M; Medvedkov, O I; Lipatov, D S; Vechkanov, N N; Guryanov, Aleksei N

    2012-01-01

    We report cladding-pumped erbium-doped fibre laser and amplifier configurations. Through fibre design optimisation, we have achieved a record-high laser slope efficiency, 40 % with respect to absorbed pump power (λ = 976 nm), and an output power of 7.5 W. The erbium-doped fibre amplifier efficiency reaches 32 %.

  9. High sensitivity amplifier/discriminator for PWC's

    International Nuclear Information System (INIS)

    Hansen, S.

    1983-01-01

    The facility support group at Fermilab is designing and building a general purpose beam chamber for use in several locations at the laboratory. This pwc has 128 wires per plane spaced 1 mm apart. An initial production of 25 signal planes is anticipated. In proportional chambers, the size of the signal depends exponentially on the charge stored per unit of length along the anode wire. As the wire spacing decreases, the capacitance per unit length decreases, thereby requiring increased applied voltage to restore the necessary charge per unit length. In practical terms, this phenomenon is responsible for difficulties in constructing chambers with less than 2 mm wire spacing. 1 mm chambers, therefore, are frequently operated very near to their breakdown point and/or a high gain gas containing organic compounds such as magic gas is used. This argon/iso-butane mixture has three drawbacks: it is explosive when exposed to the air, it leaves a residue on the wires after extended use and is costly. An amplifier with higher sensitivity would reduce the problems associated with operating chambers with small wire spacings and allow them to be run a safe margin below their breakdown voltage even with an inorganic gas mixture such as argon/CO2, this eliminating the need to use magic gas. Described here is a low cost amplifier with a usable threshold of less than 0.5 μA. Data on the performance of this amplifier/discriminator in operation on a prototype beam chamber are given. This data shows the advantages of the high sensitivity of this design

  10. PULSE MODULATION POWER AMPLIFIER WITH ENHANCED CASCADE CONTROL METHOD

    DEFF Research Database (Denmark)

    1998-01-01

    a single local feedback path A (7) with a lowpass characteristic and local forward blocks B¿1? or B (3, 4). The leads to a much improved system with a very low sensitivity to errors in the switching power stage. In the second preferred embodiment of the invention the control structure is extended...... and feedback path A to determine stable self-oscillating conditions. An implemented 250W example MECC digital power amplifier has proven superior performance in terms of audio performance (0.005 % distortion, 115 dB dynamic range) and efficiency (92 %).......A digital switching power amplifier with Multivariable Enhanced Cascade Controlled (MECC) includes a modulator, a switching power stage and a low pass filter. In the first preferred embodiment an enhanced cascade control structure local to the switching power stage is added, characterised by having...

  11. Linearization and efficiency enhancement of power amplifiers using digital predistortion

    Energy Technology Data Exchange (ETDEWEB)

    Safari, Nima

    2008-07-01

    Today, demand of higher spectral efficiency forces wireless communication systems to employ non-constant envelope modulation schemes such as Quadrature Amplitude Modulations (QAM), Code Division Multiple Access (CDMA) and Orthogonal Frequency-Division Multiplexing (OFDM) schemes. These modulation techniques generate signals with wide range of envelope fluctuation. This property makes these schemes sensitive to nonlinear amplifications. Nonlinearities introduced by Power Amplifiers (PA) cause both a distortion of the signal and an increased out of band output spectrum, which leads to a rise in adjacent channel interference. Thus, in order to ensure a high spectral efficiency and to avoid spectral regrowth, a linearization technique is required. Among all the linearization techniques, basedband Digital Predistortion (DPD) is one of the commonly used linearization techniques, which is characterized by robust operation, low implementation cost and high accuracy. In the first chapter of this thesis, an introduction on the motivation and necessity of using PA linearization techniques is presented. Digital Predistortion as a popular linearization technique aims to improve the efficiency and linearity of RF power amplifiers. The scope of the thesis, the goals to be achieved and the contributions are also discussed in chapter one. Chapter two, mainly discusses sample-by-sample updating algorithm in Digital Predistorters to adaptively linearize the PA memoryless nonlinearities. Look-up Table (LUT) and polynomial approaches are studied and implemented in Hardware using a test-bed provided by Nera Research. The experimental results together with a discussion are then given. A new DPD algorithm based on block estimation is proposed in chapter three to avoid realtime signal processing, reduce the complexity and also avoid the bad performance during the slow adaptation of adaptive the Adjacent Channel Power Ratio (ACPR) and the Error Vector Magnitude (EVM) requirements. In

  12. Efficiency Investigation of Switch Mode Power Amplifier Drving Low Impedance Transducers

    DEFF Research Database (Denmark)

    Iversen, Niels Elkjær; Schneider, Henrik; Knott, Arnold

    2015-01-01

    the amplifier rail voltage requirement as a function of the voice coil nominal resistance is presented. The method is based on a crest factor analysis of music signals and estimation of the electrical power requirement from a specific target of the sound pressure level. Experimental measurements confirms a huge...... performance leap in terms of efficiency compared to a conventional battery driven sound system. Future optimization of low voltage, high current amplifiers for low impedance loudspeaker drivers are discussed....

  13. A novel power amplifier structure for RFID tag applications

    International Nuclear Information System (INIS)

    Deng Jianbao; Zhang Shilin; Li De; Zhang Yanzheng; Mao Luhong; Xie Sheng

    2011-01-01

    A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240 × 70 μm 2 in a 0.18 μm CMOS process due to saving two on-chip integrated inductors. Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal, the PA shows a measured output power of 8 dBm at the 1 dB compression point. (semiconductor integrated circuits)

  14. Waveform measurement in mocrowave device characterization: impact on power amplifiers design

    Directory of Open Access Journals (Sweden)

    Roberto Quaglia

    2016-07-01

    Full Text Available This paper describes an example of a measurement setup enabling waveform measurements during the load-pull characterization of a microwave power device. The significance of this measurement feature is highlighted showing how waveform engineering can be exploited to design high efficiency microwave power amplifiers.

  15. Repeated Evolution of Power-Amplified Predatory Strikes in Trap-Jaw Spiders.

    Science.gov (United States)

    Wood, Hannah M; Parkinson, Dilworth Y; Griswold, Charles E; Gillespie, Rosemary G; Elias, Damian O

    2016-04-25

    Small animals possess intriguing morphological and behavioral traits that allow them to capture prey, including innovative structural mechanisms that produce ballistic movements by amplifying power [1-6]. Power amplification occurs when an organism produces a relatively high power output by releasing slowly stored energy almost instantaneously, resulting in movements that surpass the maximal power output of muscles [7]. For example, trap-jaw, power-amplified mechanisms have been described for several ant genera [5, 8], which have evolved some of the fastest known movements in the animal kingdom [6]. However, power-amplified predatory strikes were not previously known in one of the largest animal classes, the arachnids. Mecysmaucheniidae spiders, which occur only in New Zealand and southern South America, are tiny, cryptic, ground-dwelling spiders that rely on hunting rather than web-building to capture prey [9]. Analysis of high-speed video revealed that power-amplified mechanisms occur in some mecysmaucheniid species, with the fastest species being two orders of magnitude faster than the slowest species. Molecular phylogenetic analysis revealed that power-amplified cheliceral strikes have evolved four times independently within the family. Furthermore, we identified morphological innovations that directly relate to cheliceral function: a highly modified carapace in which the cheliceral muscles are oriented horizontally; modification of a cheliceral sclerite to have muscle attachments; and, in the power-amplified species, a thicker clypeus and clypeal apodemes. These structural innovations may have set the stage for the parallel evolution of ballistic predatory strikes. Copyright © 2016 Elsevier Ltd. All rights reserved.

  16. Pulse amplifier with high 'common mode rejection'

    International Nuclear Information System (INIS)

    Ijlst, P.

    1987-01-01

    The input signal of a pulse amplifier contains large 'common-mode' signals which have to be suppressed. A transformer, especially constructed for this purpose, is described. It has been tried to optimize the signal to noise ratio of the pulse amplifier by means of noise analysis. (Auth.)

  17. High brightness photonic lantern kW-class amplifier

    Science.gov (United States)

    Montoya, Juan; Hwang, Chris; Aleshire, Chris; Reed, Patricia; Martz, Dale; Riley, Mike; Trainor, Michael; Belley, Catherine; Shaw, Scot; Fan, T. Y.; Ripin, Dan

    2018-02-01

    Pump-limited kW-class operation in a multimode fiber amplifier using adaptive mode control was achieved. A photonic lantern front end was used to inject an arbitrary superposition of modes on the input to a kW-class fiber amplifier to achieve a nearly diffraction-limited output. We report on the adaptive spatial mode control architecture which allows for compensating transverse-mode disturbances at high power. We also describe the advantages of adaptive spatial mode control for optical phased array systems. In particular, we show that the additional degrees of freedom allow for broader steering and improved atmospheric turbulence compensation relative to piston-only optical phased arrays.

  18. Design of a power amplifier for the LAMPF proton storage ring transverse damper system

    International Nuclear Information System (INIS)

    Lunsford, J.S.

    1981-01-01

    A power amplifier has been designed to drive the 50-Ω stripline deflection structures in the transverse active damper of the Los Alamos 800-MeV Proton Storage Ring (PSR). The unit will provide 600-V peak-to-peak with a dc-to-100-MHz bandwidth. Other important characteristics include < 40-ns delay time, 50-dB voltage gain, and 4-ns risetime with < 5% overshoot and ringing. Because of the current-drive properties of the amplifier, two amplifiers could be combined to provide over 1000-V peak-to-peak into 50 Ω, with very little bandwidth degradation. Components in the power amplifier that represent new designs are a 20-tube distributed-amplifier output stage; a driver stage, using VMOS FET and bipolar transistors; a high-voltage probe, with good dc stability and 150-MHz bandwidth; a transient suppressor circuit, using PIN diodes to protect the transistorized drivers from tube arcing; a nonlinear amplifier to compensate for the nonlinear characteristics of the distributed amplifier; and a first-fail indicator circuit to aid in locating the prime causes of equipment failures

  19. Analysis and evaluation of the power amplifier device

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Y. K.; Ryu, J. W. [Kongju National University, Gongju (Korea, Republic of)

    2011-11-15

    We developed a master oscillator power amplifier (MOPA) type fiber amplifier for the separation of the Ca-48 isotope by using a fiber laser. The ytterbium (Yb)-doped end-capped rod-type photonic crystal fiber (PCF) was used as a gain medium of MOPA amplifier. The PCFs used in our experiments were a 56-cm and an 81-cm rod-type end-capped Yb-doped double-clad PM fibers 'DC-285/100-PM-Yb-Rod', with a 100-{mu}m core (NA 0.02) and a 285-{mu}m cladding (NA 0.6) fabricated by NKT Photonics. The mode field diameter (MFD) of the rod-type PCF was 75-{mu}m, and an absorption efficiency of 30 dB/m at 976 nm and a low NA 0.02 helped to sustain the excellent lasing beam quality. We obtained an output power of 112 W at a pump power of 380 W with a repetition rate of 150 kHz. The measured pulse width was 13 ns at 150 kHz, 1056 nm. The laser beam quality shows a single mode amplification characteristics with a beam quality factor values of M2 are 2 -3. The PCF launching efficiency reached a maximum value of 86.7% with an average efficiencies of above 80%. At a pump power of 250 W and seed power input of 4 W, the CW PCF amplifier was found to generate average output powers of 138 W, 110 W, and 82 W at 1056-nm, 1070-nm, and 1089-nm wavelengths, respectively. The amplified PCF output beam had a line width of 70 MHz full width at half maximum (FWHM). These PCF amplified beams had good beam qualities with M2values of less than 1.8 at all three wavelengths. The gain saturation seed input power in the 81-cm PCF was found to be {approx}6 W at 1056 nm. The temperature of the PCF core reached over 230 .deg. C at the pumping section of the PCF. The temperatures of the end-cap heads on both the pumping and the output end-cap sides were 81.4 .deg. C and 35.7 .deg. C, respectively. The PCF amplifier maintained good polarization mode characteristics with an average DOP of over 87%. The slight decrease in the DOP oat output powers over 170 W output power may have been caused by a

  20. An RF Power Amplifier in a Digital CMOS Process

    DEFF Research Database (Denmark)

    Nielsen, Per Asbeck; Fallesen, Carsten

    2002-01-01

    A two stage class B power amplifier for 1.9 GHz is presented. The amplifier is fabricated in a standard digital EPI-CMOS process with low resistivity substrate. The measured output power is 29 dBm in a 50 Omega load. A design method to find the large signal parameters of the output transistor...... is presented. It separates the determination of the optimal load resistance and the determination of the large signal drain-source capacitance. Based on this method, proper values for on-chip interstage matching and off-chip output matching can be derived. A envelope linearisation circuit for the PA...... is proposed. Simulations and measurements of a fabricated linearisation circuit are presented and used to calculate the achievable linearity in terms of the spectral leakage and the error vector magnitude of a EDGE (3 pi /8-8PSK) modulated signal....

  1. Class H power amplifier for power saving in fluxgate current transducers

    OpenAIRE

    Velasco Quesada, Guillermo; Román Lumbreras, Manuel; Pérez Delgado, Raul; Conesa Roca, Alfons

    2016-01-01

    This paper presents a new improvement in the design of a fluxgate-based current transducer in order to reduce the power consumption of control electronics. The proposed improvement involves the replacement of the output linear amplifier of the transducer by a class H amplifier. The output amplifier is devoted to the magnetic flux compensation and generates the transducer output current, which is proportional to the current to be measured. In this way, it is possible to reduce significantly th...

  2. Note: A high dynamic range, linear response transimpedance amplifier.

    Science.gov (United States)

    Eckel, S; Sushkov, A O; Lamoreaux, S K

    2012-02-01

    We have built a high dynamic range (nine decade) transimpedance amplifier with a linear response. The amplifier uses junction-gate field effect transistors (JFETs) to switch between three different resistors in the feedback of a low input bias current operational amplifier. This allows for the creation of multiple outputs, each with a linear response and a different transimpedance gain. The overall bandwidth of the transimpedance amplifier is set by the bandwidth of the most sensitive range. For our application, we demonstrate a three-stage amplifier with transimpedance gains of approximately 10(9)Ω, 3 × 10(7)Ω, and 10(4)Ω with a bandwidth of 100 Hz.

  3. A review on power reducing methods of neural recording amplifiers

    Directory of Open Access Journals (Sweden)

    samira mehdipour

    2016-10-01

    Full Text Available Implantable multi-channel neural recording Microsystems comprise a large number of neural amplifiers, that can affect the overall power consumption and chip area of the analog part of the system.power, noise, size and dc offset are the main challenge faced by designers. Ideally the output of the opamp should be at zero volts when the inputs are grounded.In reality the input terminals are at slightly different dc potentials.The input offset voltage is defined as the voltage that must be applied between the two input terminals of the opamp to obtain zero volts at the output. Amplifier must have capability to reject this dc offset. First method that uses a capacitor feedback network with ac coupling of input devices to reject the offset is very popular in designs.very small low-cutoff frequency.The second method employs a closed-loop resistive feedback and electrode capacitance to form a highpass filter.Moreover,The third method adopts the symmetric floating resistor the feedback path of low noise amplifier to achieve low-frequency cutoff and rejects DC offset voltage. .In some application we can use folded cascade topology.The telescopic topology is a good candidate in terms of providing large gain and phase margin while dissipating small power. the cortical VLSI neuron model reducing power consumption of circuits.Power distribution is the best way to reduce power, noise and silicon area. The total power consumption of the amplifier array is reduced by applying the partial OTA sharing technique. The silicon area is reduced as a benefit of sharing the bulky capacitor.

  4. TEDS Base Station Power Amplifier using Low-Noise Envelope Tracking Power Supply

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael A. E.

    2009-01-01

    This paper demonstrates a highly linear and efficient TETRA enhanced data service (TEDS) base-station RF power amplifier (RFPA). Based on the well-known combination of an envelope tracking (ET) power supply and a linear class-A/B RFPA, adequate adjacent channel power ratio (ACPR) and wideband noise...... experimentally with a 9.6-dB peak-to-average 50-kHz 16 quadrature amplitude modulation TEDS carrier, the setup providing 44-dBm (25 W) average RF output power at 400 MHz with 44% dc-to-RF efficiency state-of-the-art ACPR of less than ${-}$67 dBc, switching noise artifacts around ${-}$ 85 dBc, and an overall rms...

  5. Solid State Power Amplifier for 805 MegaHertz at the Los Alamos Neutron Science Center

    International Nuclear Information System (INIS)

    Davis, J.L.; Lyles, J.T.M.

    1998-01-01

    Particle accelerators for protons, electrons, and other ion species often use high-power vacuum tubes for RF amplification, due to the high RF power requirements to accelerate these particles with high beam currents. The final power amplifier stages driving large accelerators are unable to be converted to solid-state devices with the present technology. In some instances, radiation levels preclude the use of transistors near beamlines. Work is being done worldwide to replace the RF power stages under about ten kilowatts CW with transistor amplifiers, due to the lower maintenance costs and obsolescence of power tubes in these ranges. This is especially practical where the stages drive fifty Ohm impedance and are not located in high radiation zones. The authors are doing this at the Los Alamos Neutron Science Center (LANSCE) proton linear accelerator (linac) in New Mexico. They replaced a physically-large air-cooled UHF power amplifier using a tetrode electron tube with a compact water-cooled unit based on modular amplifier pallets developed at LANSCE. Each module uses eight push-pull bipolar power transistor pairs operated in class AB. Four pallets can easily provide up to 2,800 watts of continuous RF at 805 MHz. A radial splitter and combiner parallels the modules. This amplifier has proven to be completely reliable after over 10,000 hours of operation without failure. A second unit was constructed and installed for redundancy, and the old tetrode system was removed in 1998. The compact packaging for cooling, DC power, impedance matching, RF interconnection, and power combining met the electrical and mechanical requirements. CRT display of individual collector currents and RF levels is made possible with built-in samplers and a VXI data acquisition unit

  6. A low power bipolar amplifier integrated circuit for the ZEUS silicon strip system

    Energy Technology Data Exchange (ETDEWEB)

    Barberis, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Cartiglia, N. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Dorfan, D.E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States)); Spencer, E. (Inst. for Particle Physics, Univ. of California, Santa Cruz, CA (United States))

    1993-05-01

    A fast low power bipolar chip consisting of 64 amplifier-comparators has been developed for use with silicon strip detectors for systems where high radiation levels and high occupancy considerations are important. The design is described and test results are presented. (orig.)

  7. On the power amplifier nonlinearity in MIMO transmit beamforming systems

    KAUST Repository

    Qi, Jian

    2012-03-01

    In this paper, single-carrier multiple-input multiple-output (MIMO) transmit beamforming (TB) systems in the presence of high-power amplifier (HPA) nonlinearity are investigated. Specifically, due to the suboptimality of the conventional maximal ratio transmission/maximal ratio combining (MRT/MRC) under HPA nonlinearity, we propose the optimal TB scheme with the optimal beamforming weight vector and combining vector, for MIMO systems with nonlinear HPAs. Moreover, an alternative suboptimal but much simpler TB scheme, namely, quantized equal gain transmission (QEGT), is proposed. The latter profits from the property that the elements of the beamforming weight vector have the same constant modulus. The performance of the proposed optimal TB scheme and QEGT/MRC technique in the presence of the HPA nonlinearity is evaluated in terms of the average symbol error probability and mutual information with the Gaussian input, considering the transmission over uncorrelated quasi-static frequency-flat Rayleigh fading channels. Numerical results are provided and show the effects on the performance of several system parameters, namely, the HPA parameters, numbers of antennas, quadrature amplitude modulation modulation order, number of pilot symbols, and cardinality of the beamforming weight vector codebook for QEGT. © 2012 IEEE.

  8. On the power amplifier nonlinearity in MIMO transmit beamforming systems

    KAUST Repository

    Qi, Jian; Aissa, Sonia

    2012-01-01

    In this paper, single-carrier multiple-input multiple-output (MIMO) transmit beamforming (TB) systems in the presence of high-power amplifier (HPA) nonlinearity are investigated. Specifically, due to the suboptimality of the conventional maximal ratio transmission/maximal ratio combining (MRT/MRC) under HPA nonlinearity, we propose the optimal TB scheme with the optimal beamforming weight vector and combining vector, for MIMO systems with nonlinear HPAs. Moreover, an alternative suboptimal but much simpler TB scheme, namely, quantized equal gain transmission (QEGT), is proposed. The latter profits from the property that the elements of the beamforming weight vector have the same constant modulus. The performance of the proposed optimal TB scheme and QEGT/MRC technique in the presence of the HPA nonlinearity is evaluated in terms of the average symbol error probability and mutual information with the Gaussian input, considering the transmission over uncorrelated quasi-static frequency-flat Rayleigh fading channels. Numerical results are provided and show the effects on the performance of several system parameters, namely, the HPA parameters, numbers of antennas, quadrature amplitude modulation modulation order, number of pilot symbols, and cardinality of the beamforming weight vector codebook for QEGT. © 2012 IEEE.

  9. High Efficiency Traveling-Wave Tube Power Amplifier for Ka-Band Software Defined Radio on International Space Station-A Platform for Communications Technology Development

    Science.gov (United States)

    Simons, Rainee N.; Force, Dale A.; Kacpura, Thomas J.

    2013-01-01

    The design, fabrication and RF performance of the output traveling-wave tube amplifier (TWTA) for a space based Ka-band software defined radio (SDR) is presented. The TWTA, the SDR and the supporting avionics are integrated to forms a testbed, which is currently located on an exterior truss of the International Space Station (ISS). The SDR in the testbed communicates at Ka-band frequencies through a high-gain antenna directed to NASA s Tracking and Data Relay Satellite System (TDRSS), which communicates to the ground station located at White Sands Complex. The application of the testbed is for demonstrating new waveforms and software designed to enhance data delivery from scientific spacecraft and, the waveforms and software can be upgraded and reconfigured from the ground. The construction and the salient features of the Ka-band SDR are discussed. The testbed is currently undergoing on-orbit checkout and commissioning and is expected to operate for 3 to 5 years in space.

  10. Linear CMOS RF power amplifiers a complete design workflow

    CERN Document Server

    Ruiz, Hector Solar

    2013-01-01

    The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

  11. Radiation-hard mid-power booster optical fiber amplifiers for high-speed digital and analogue satellite laser communication links

    Science.gov (United States)

    Stampoulidis, L.; Kehayas, E.; Stevens, G.; Henwood-Moroney, L.; Hosking, P.; Robertson, A.

    2017-11-01

    Optical laser communications (OLC) has been identified as the technology to enable high-data rate, secure links between and within satellites, as well as between satellites and ground stations with decreased mass, size, and electrical power compared to traditional RF technology.

  12. Medium Power 352 MHZ solid state pulsed RF amplifiers for the CERN LINAC4 Project

    CERN Document Server

    Broere, J; Gómez Martínez, Y; Rossi, M

    2011-01-01

    Economic, modular and highly linear pulsed RF amplifiers have recently been developed to be used for the three buncher cavities in the CERN Linac4. The amplifiers are water-cooled and can provide up to 33 kW pulsed RF Power, 1.5 ms pulse length and 50 Hz repetition rate. Furthermore a 60 kW unit is under construction to provide the required RF Power for the debuncher cavity. The concept is based on 1.2 kW RF power modules using the latest 6th generation LDMOS technology. For integration into the CERN control environment the amplifiers have an internal industrial controller, which will provide easy control and extended diagnostic functions. This paper describes the construction, performance, including linearity, phase stability and EMC compliance tests

  13. High-Performance Operational and Instrumentation Amplifiers

    NARCIS (Netherlands)

    Shahi, B.

    2015-01-01

    This thesis describes techniques to reduce the offset error in precision instrumentation and operational amplifiers. The offset error which is considered a major error source associated with gain blocks, together with other errors are reviewed. Conventional and newer approaches to remove offset and

  14. A Reduced Switch Voltage Stress Class E Power Amplifier Using Harmonic Control Network

    OpenAIRE

    Ali Reza Zirak; Sobhan Roshani

    2016-01-01

    In this paper, a harmonic control network (HCN) is presented to reduce the voltage stress (maximum MOSFET voltage) of the class E power amplifier (PA). Effects of the HCN on the amplifier specifications are investigated. The results show that the proposed HCN affects several specifications of the amplifier, such as drain voltage, switch current, output power capability (Cp factor), and drain impedance. The output power capability of the presented amplifier is also improved, compared with the ...

  15. Small-signal analysis and particle-in-cell simulations of planar dielectric Cherenkov masers for use as high-frequency, moderate-power broadband amplifiers

    International Nuclear Information System (INIS)

    Carlsten, Bruce E.

    2002-01-01

    A small-signal gain analysis of the planar dielectric Cherenkov maser is presented. The analysis results in a Pierce gain solution, with three traveling-wave modes. The analysis shows that the dielectric Cherenkov maser has a remarkable broadband tuning ability near cutoff, while maintaining reasonable gain rates. Numerical simulations verifying the small-signal gain results are presented, using a particle-in-cell code adapted specifically for planar traveling-wave tubes. An instantaneous bandwidth is numerically shown to be very large, and saturated efficiency for a nominal high-power design is shown to be in the range of standard untapered traveling-wave tubes

  16. A high performance electrometer amplifier of hybrid design

    International Nuclear Information System (INIS)

    Rao, N.V.; Nazare, C.K.

    1979-01-01

    A high performance, reliable, electrometer amplifier of hybrid design for low current measurements in mass spectrometers has been developed. The short term instability with a 5 x 10 11 ohms input resistor is less than 1 x 10sup(-15) Amp. The drift is better than 1 mV/hour. The design steps are illustrated with a typical amplifier performance details. (auth.)

  17. A Review of High Voltage Drive Amplifiers for Capacitive Actuators

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail...

  18. Carrier Distortion in Hysteretic Self-Oscillating Class-D Audio Power:Amplifiers: Analysis and Optimization

    OpenAIRE

    Høyerby, Mikkel Christian Kofod; Andersen, Michael A. E.

    2009-01-01

    An important distortion mechanism in hysteretic self-oscillating (SO) class-D (switch mode) power amplifiers-–carrier distortion-–is analyzed and an optimization method is proposed. This mechanism is an issue in any power amplifier application where a high degree of proportionality between input and output is required, such as in audio power amplifiers or xDSL drivers. From an average-mode point of view, carrier distortion is shown to be caused by nonlinear variation of the hysteretic compara...

  19. X-Parameter Based Modelling of Polar Modulated Power Amplifiers

    DEFF Research Database (Denmark)

    Wang, Yelin; Nielsen, Troels Studsgaard; Sira, Daniel

    2013-01-01

    X-parameters are developed as an extension of S-parameters capable of modelling non-linear devices driven by large signals. They are suitable for devices having only radio frequency (RF) and DC ports. In a polar power amplifier (PA), phase and envelope of the input modulated signal are applied...... at separate ports and the envelope port is neither an RF nor a DC port. As a result, X-parameters may fail to characterise the effect of the envelope port excitation and consequently the polar PA. This study introduces a solution to the problem for a commercial polar PA. In this solution, the RF-phase path...... PA for simulations. The simulated error vector magnitude (EVM) and adjacent channel power ratio (ACPR) were compared with the measured data to validate the model. The maximum differences between the simulated and measured EVM and ACPR are less than 2% point and 3 dB, respectively....

  20. Power amplifier circuits for functional electrical stimulation systems

    Directory of Open Access Journals (Sweden)

    Delmar Carvalho de Souza

    Full Text Available Abstract Introduction: Functional electrical stimulation (FES is a technique that has been successfully employed in rehabilitation treatment to mitigate problems after spinal cord injury (SCI. One of the most relevant modules in a typical FES system is the power or output amplifier stage, which is responsible for the application of voltage or current pulses of proper intensity to the biological tissue, applied noninvasively via electrodes, placed on the skin surface or inside the muscular tissue, closer to the nervous fibers. The goals of this paper are to describe and discuss about the main power output designs usually employed in transcutaneous functional electrical stimulators as well as safety precautions taken to protect patients. Methods A systematic review investigated the circuits of papers published in IEEE Xplore and ScienceDirect databases from 2000 to 2016. The query terms were “((FES or Functional electric stimulator and (circuit or design” with 274 papers retrieved from IEEE Xplore and 29 from ScienceDirect. After the application of exclusion criteria the amount of papers decreased to 9 and 2 from IEEE Xplore and ScienceDirect, respectively. One paper was inserted in the results as a technological contribution to the field. Therefore, 12 papers presented power stage circuits suitable to stimulate great muscles. Discussion The retrieved results presented relevant circuits with different electronic strategies and circuit components. Some of them considered patient safety strategies or aimed to preserve muscle homeostasis such as biphasic current application, which prevents charge accumulation in stimulated tissues as well as circuits that dealt with electrical impedance variation to keep the electrode-tissue interface within an electrochemical safe regime. The investigation revealed a predominance of design strategies using operational amplifiers in power circuits, current outputs, and safety methods to reduce risks of electrical

  1. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented....

  2. Investigation of Energy Consumption and Sound Quality for Class-D Audio Amplifiers using Tracking Power Supplies

    DEFF Research Database (Denmark)

    Yamauchi, Akira; Schneider, Henrik; Knott, Arnold

    2015-01-01

    power supply tracking and its influence on power losses, audio performance and environmental impact for a 130 W class-D amplifier prototype as well as a commercialized class-D amplifier. Both modeled and experimental results verify that a large improvement of efficiency can be achieved. The total...... harmonic is found to be unaffected by stepless power supply tracking due the high supply rejection ratio of the used amplifiers under test.......The main advantage of Class-D audio amplifiers is high efficiency which is often stated to be more than 90 % but at idle or low power levels the efficiency is much lower. The waste energy is an environmental concern, a concern in mobile applications where long battery operation is required...

  3. High efficiency RF amplifier development over wide dynamic range for accelerator application

    Science.gov (United States)

    Mishra, Jitendra Kumar; Ramarao, B. V.; Pande, Manjiri M.; Joshi, Gopal; Sharma, Archana; Singh, Pitamber

    2017-10-01

    Superconducting (SC) cavities in an accelerating section are designed to have the same geometrical velocity factor (βg). For these cavities, Radio Frequency (RF) power needed to accelerate charged particles varies with the particle velocity factor (β). RF power requirement from one cavity to other can vary by 2-5 dB within the accelerating section depending on the energy gain in the cavity and beam current. In this paper, we have presented an idea to improve operating efficiency of the SC RF accelerators using envelope tracking technique. A study on envelope tracking technique without feedback is carried out on a 1 kW, 325 MHz, class B (conduction angle of 180 degrees) tuned load power amplifier (PA). We have derived expressions for the efficiency and power output for tuned load amplifier operating on the envelope tracking technique. From the derived expressions, it is observed that under constant load resistance to the device (MOSFET), optimum amplifier efficiency is invariant whereas output power varies with the square of drain bias voltage. Experimental results on 1 kW PA module show that its optimum efficiency is always greater than 62% with variation less than 5% from mean value over 7 dB dynamic range. Low power amplifier modules are the basic building block for the high power amplifiers. Therefore, results for 1 kW PA modules remain valid for the high power solid state amplifiers built using these PA modules. The SC RF accelerators using these constant efficiency power amplifiers can improve overall accelerator efficiency.

  4. High Energy Single Frequency Resonant Amplifier, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR phase I project proposes a single frequency high energy resonant amplifier for remote sensing. Current state-of-art technologies can not provide all...

  5. High Efficiency S-Band 20 Watt Amplifier

    Data.gov (United States)

    National Aeronautics and Space Administration — This project includes the design and build of a prototype 20 W, high efficiency, S-Band amplifier.   The design will incorporate the latest semiconductor technology,...

  6. SiC MOSFET Switching Power Amplifier Project Summary

    Science.gov (United States)

    Miller, Kenneth E.; Ziemba, Timothy; Prager, James; Slobodov, Ilia; Henson, Alex

    2017-10-01

    Eagle Harbor Technologies has completed a Phase I/II program to develop SiC MOSFET based Switching Power Amplifiers (SPA) for precision magnet control in fusion science applications. During this program, EHT developed several units have been delivered to the Helicity Injected Torus (HIT) experiment at the University of Washington to drive both the voltage and flux circuits of the helicity injectors. These units are capable of switching 700 V at 100 kHz with an adjustable duty cycle from 10 - 90% and a combined total output current of 96 kA for 4 ms (at max current). The SPAs switching is controlled by the microcontroller at HIT, which adjusts the duty cycle to maintain a specific waveform in the injector. The SPAs include overcurrent and shoot-through protection circuity. EHT will present an overview of the program including final results for the SPA waveforms. With support of DOE SBIR.

  7. Cascade Structure of Digital Predistorter for Power Amplifier Linearization

    Directory of Open Access Journals (Sweden)

    E. B. Solovyeva

    2015-12-01

    Full Text Available In this paper, a cascade structure of nonlinear digital predistorter (DPD synthesized by the direct learning adaptive algorithm is represented. DPD is used for linearization of power amplifier (PA characteristic, namely for compensation of PA nonlinear distortion. Blocks of the cascade DPD are described by different models: the functional link artificial neural network (FLANN, the polynomial perceptron network (PPN and the radially pruned Volterra model (RPVM. At synthesis of the cascade DPD there is possibility to overcome the ill conditionality problem due to reducing the dimension of DPD nonlinear operator approximation. Results of compensating nonlinear distortion in Wiener–Hammerstein model of PA at the GSM–signal with four carriers are shown. The highest accuracy of PA linearization is produced by the cascade DPD containing PPN and RPVM.

  8. Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China); Li, Z. H.; Zhang, Y. J.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China)

    2013-11-15

    An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

  9. Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

    Science.gov (United States)

    Wu, Y.; Xie, H. Q.; Li, Z. H.; Zhang, Y. J.; Ma, Q. S.

    2013-11-01

    An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

  10. High repetition rate tunable femtosecond pulses and broadband amplification from fiber laser pumped parametric amplifier.

    Science.gov (United States)

    Andersen, T V; Schmidt, O; Bruchmann, C; Limpert, J; Aguergaray, C; Cormier, E; Tünnermann, A

    2006-05-29

    We report on the generation of high energy femtosecond pulses at 1 MHz repetition rate from a fiber laser pumped optical parametric amplifier (OPA). Nonlinear bandwidth enhancement in fibers provides the intrinsically synchronized signal for the parametric amplifier. We demonstrate large tunability extending from 700 nm to 1500 nm of femtosecond pulses with pulse energies as high as 1.2 muJ when the OPA is seeded by a supercontinuum generated in a photonic crystal fiber. Broadband amplification over more than 85 nm is achieved at a fixed wavelength. Subsequent compression in a prism sequence resulted in 46 fs pulses. With an average power of 0.5 W these pulses have a peak-power above 10 MW. In particular, the average power and pulse energy scalability of both involved concepts, the fiber laser and the parametric amplifier, will enable easy up-scaling to higher powers.

  11. An optical parametric chirped-pulse amplifier for seeding high repetition rate free-electron lasers

    International Nuclear Information System (INIS)

    Höppner, H; Hage, A; Tanikawa, T; Schulz, M; Faatz, B; Riedel, R; Prandolini, M J; Teubner, U; Tavella, F

    2015-01-01

    High repetition rate free-electron lasers (FEL), producing highly intense extreme ultraviolet and x-ray pulses, require new high power tunable femtosecond lasers for FEL seeding and FEL pump-probe experiments. A tunable, 112 W (burst mode) optical parametric chirped-pulse amplifier (OPCPA) is demonstrated with center frequencies ranging from 720–900 nm, pulse energies up to 1.12 mJ and a pulse duration of 30 fs at a repetition rate of 100 kHz. Since the power scalability of this OPCPA is limited by the OPCPA-pump amplifier, we also demonstrate a 6.7–13.7 kW (burst mode) thin-disk OPCPA-pump amplifier, increasing the possible OPCPA output power to many hundreds of watts. Furthermore, third and fourth harmonic generation experiments are performed and the results are used to simulate a seeded FEL with high-gain harmonic generation. (paper)

  12. Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

    Directory of Open Access Journals (Sweden)

    Mahammad A. Hannan

    2014-12-01

    Full Text Available With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil’s mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning

  13. Automatic Frequency Controller for Power Amplifiers Used in Bio-Implanted Applications: Issues and Challenges

    Science.gov (United States)

    Hannan, Mahammad A.; Hussein, Hussein A.; Mutashar, Saad; Samad, Salina A.; Hussain, Aini

    2014-01-01

    With the development of communication technologies, the use of wireless systems in biomedical implanted devices has become very useful. Bio-implantable devices are electronic devices which are used for treatment and monitoring brain implants, pacemakers, cochlear implants, retinal implants and so on. The inductive coupling link is used to transmit power and data between the primary and secondary sides of the biomedical implanted system, in which efficient power amplifier is very much needed to ensure the best data transmission rates and low power losses. However, the efficiency of the implanted devices depends on the circuit design, controller, load variation, changes of radio frequency coil's mutual displacement and coupling coefficients. This paper provides a comprehensive survey on various power amplifier classes and their characteristics, efficiency and controller techniques that have been used in bio-implants. The automatic frequency controller used in biomedical implants such as gate drive switching control, closed loop power control, voltage controlled oscillator, capacitor control and microcontroller frequency control have been explained. Most of these techniques keep the resonance frequency stable in transcutaneous power transfer between the external coil and the coil implanted inside the body. Detailed information including carrier frequency, power efficiency, coils displacement, power consumption, supplied voltage and CMOS chip for the controllers techniques are investigated and summarized in the provided tables. From the rigorous review, it is observed that the existing automatic frequency controller technologies are more or less can capable of performing well in the implant devices; however, the systems are still not up to the mark. Accordingly, current challenges and problems of the typical automatic frequency controller techniques for power amplifiers are illustrated, with a brief suggestions and discussion section concerning the progress of

  14. Resonant High Power Combiners

    CERN Document Server

    Langlois, Michel; Peillex-Delphe, Guy

    2005-01-01

    Particle accelerators need radio frequency sources. Above 300 MHz, the amplifiers mostly used high power klystrons developed for this sole purpose. As for military equipment, users are drawn to buy "off the shelf" components rather than dedicated devices. IOTs have replaced most klystrons in TV transmitters and find their way in particle accelerators. They are less bulky, easier to replace, more efficient at reduced power. They are also far less powerful. What is the benefit of very compact sources if huge 3 dB couplers are needed to combine the power? To alleviate this drawback, we investigated a resonant combiner, operating in TM010 mode, able to combine 3 to 5 IOTs. Our IOTs being able to deliver 80 kW C.W. apiece, combined power would reach 400 kW minus the minor insertion loss. Values for matching and insertion loss are given. The behavior of the system in case of IOT failure is analyzed.

  15. Study of the Powerful Nd:YLF Laser Amplifiers for the CTF3 Photoinjectors

    CERN Document Server

    Petrarca, M; Luchinin, G; Divall, M

    2011-01-01

    A high-power neodymium-doped yttrium lithium fluoride (Nd:YLF) mode-locked 1.5-GHz laser currently used to drive the two photoinjectors of the Compact Linear Collider Test Facility project at the European Organization for Nuclear Research is described. A phenomenological characterization of the two powerful Nd:YLF amplifiers is presented and compared with the measurements. The laser system operates in a saturated steady-state mode. This mode provides good shot-to-shot stability with pulse train mean power in the 10 kW range.

  16. Augmented twin-nonlinear two-box behavioral models for multicarrier LTE power amplifiers.

    Science.gov (United States)

    Hammi, Oualid

    2014-01-01

    A novel class of behavioral models is proposed for LTE-driven Doherty power amplifiers with strong memory effects. The proposed models, labeled augmented twin-nonlinear two-box models, are built by cascading a highly nonlinear memoryless function with a mildly nonlinear memory polynomial with cross terms. Experimental validation on gallium nitride based Doherty power amplifiers illustrates the accuracy enhancement and complexity reduction achieved by the proposed models. When strong memory effects are observed, the augmented twin-nonlinear two-box models can improve the normalized mean square error by up to 3 dB for the same number of coefficients when compared to state-of-the-art twin-nonlinear two-box models. Furthermore, the augmented twin-nonlinear two-box models lead to the same performance as previously reported twin-nonlinear two-box models while requiring up to 80% less coefficients.

  17. Development of a pump-probe facility with sub-picosecond time resolution combining a high-power ultraviolet regenerative FEL amplifier and a soft X-ray SASE FEL

    International Nuclear Information System (INIS)

    Faatz, B.; Fateev, A.A.; Feldhaus, J.; Krzywinski, J.; Pflueger, J.; Rossbach, J.; Saldin, E.L.; Schneidmiller, E.A.; Yurkov, M.V.

    2001-01-01

    This paper presents the conceptual design of a high power radiation source with laser-like characteristics in the ultraviolet spectral range at the TESLA Test Facility (TTF). The concept is based on the generation of radiation in a regenerative FEL amplifier (RAFEL). The RAFEL described in this paper covers a wavelength range of 200-400 nm and provides 200 fs pulses with 2 mJ of optical energy per pulse. The linac operates at 1% duty factor and the average output radiation power exceeds 100 W. The RAFEL will be driven by the spent electron beam leaving the soft X-ray FEL, thus providing minimal interference between these two devices. The RAFEL output radiation has the same time structure as the X-ray FEL and the UV pulses are naturally synchronized with the soft X-ray pulses from the TTF FEL. Therefore, it should be possible to achieve synchronization close to the duration of the radiation pulses (200 fs) for pump-probe techniques using either an UV pulse as a pump and soft X-ray pulse as a probe, or vice versa

  18. Optimized Envelope Tracking Power Supply for Tetra2 Base Station RF Power Amplifier

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

    2008-01-01

    An ultra-fast tracking power supply (UFTPS) for envelope tracking in a 50kHz 64-QAM Tetra2 base station power amplification system is demonstrated. A simple method for optimizing the step response of the PID+PD sliding-mode control system is presented and demonstrated, along with a PLL-based scheme...... application. Also demonstrated is the effect of non-zero UFTPS output impedance on envelope tracking performance. At 13W average (156W peak) RF output, a reduction of DC input power consumption from 93W (14% efficiency) to 54W (24% efficiency) is obtained by moving from a fixed RF power amplifier supply...

  19. Digitally Controlled Envelope Tracking Power Supply for an RF Power Amplifier

    DEFF Research Database (Denmark)

    Jakobsen, Lars Tønnes; Andersen, Michael Andreas E.

    2007-01-01

    due to clock frequency quantization. An envelope tracking power supply for an RF Power Amplifier (RFPA) can help improve system efficiency by reducing the power consumption of the RFPA. To show the advantage of the DiSOM over traditional counter based Digital PWM modulators two designs were compared...... in both simulation and by experiment. The results shows that the DiSOM could give an increase in open loop bandwidth by more than a factor of two and an reduce the closed loop output impedance of the power supply by a factor of 5 at the output filter resonance frequency....

  20. F-band, High-Efficiency GaN Power Amplifier for the Scanning Microwave Limb Sounder and SOFIA, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — QuinStar Technology proposes to develop a high-efficiency, 4-W SSPA operating at F-band frequencies (106-114 GHz). This will be achieved by employing two major...

  1. Low-power, enhanced-gain adaptive-biasing-based Operational Transconductance Amplifiers

    DEFF Research Database (Denmark)

    Moradi, Farshad

    A symmetrical PMOS OTA (Operational Transconductance Amplifier) is used to build an advanced rail-to-rail amplifier with improved DC-gain and reduced power consumption. By using the adaptive biasing circuit for two differential inputs, a low stand-by current can be achieved, reducing power...

  2. An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

    International Nuclear Information System (INIS)

    Ali, Mohammed H; Chakrabarty, C K; Hock, Goh C; Abdalla, Ahmed N

    2013-01-01

    Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

  3. An Optimized 2.4GHz RF Power Amplifier Performance for WLAN System

    Science.gov (United States)

    Ali, Mohammed H.; Chakrabarty, C. K.; Abdalla, Ahmed N.; Hock, Goh C.

    2013-06-01

    Recently, the design of RF power amplifiers (PAs) for modern wireless systems are faced with a difficult tradeoff for example, cellphone; battery lifetime is largely determined by the power efficiency of the PA and high spectral efficiency which have ability to transmit data at the highest possible rate for a given channel bandwidth. This paper presents the design a multi stage class AB power Amplifier with high power added efficiency (PAE) and acceptable linearity for the WLAN applications. The open-circuited third harmonic control circuit enhances the efficiency of the PA without deteriorating the linearity of class-AB mode of the PA. The voltage and current waveforms are simulated to evaluate the appropriate operation for the modes. The effectiveness of the proposed controller has been verified by comparing proposed method with another methods using simulation study under a variety of conditions. The proposed circuit operation for a WLAN signals delivers a power-added efficiency (PAE) of 37.6% is measured at 31.6-dBm output power while dissipating 34.61 mA from a 1.8V supply. Finally, the proposed PA is show a good and acceptable result for the WLAN system.

  4. Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Lixin; Jin Zhi; Liu Xinyu, E-mail: zhaolixin@ime.ac.c [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

    2009-12-15

    In wireless mobile communications and wireless local area networks (WLAN), advanced InGaP HBT with power amplifiers are key components. In this paper, the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications. The microwave large signal waveform distortions at various input power levels, especially at large signal level, are investigated and the reasons are analyzed. The output power saturation is also explained. These analyses will be useful for power amplifier designs. (semiconductor devices)

  5. A Doherty Power Amplifier with Large Back-Off Power Range Using Integrated Enhancing Reactance

    Directory of Open Access Journals (Sweden)

    Wa Kong

    2018-01-01

    Full Text Available A symmetric Doherty power amplifier (DPA based on integrated enhancing reactance (IER was proposed for large back-off applications. The IER was generated using the peaking amplifier with the help of a desired impedance transformation in the low-power region to enhance the back-off efficiency of the carrier amplifier. To convert the impedances properly, both in the low-power region and at saturation, a two-impedance matching method was employed to design the output matching networks. For verification, a symmetric DPA with large back-off power range over 2.2–2.5 GHz was designed and fabricated. Measurement results show that the designed DPA has the 9 dB back-off efficiency of higher than 45%, while the saturated output power is higher than 44 dBm over the whole operation bandwidth. When driven by a 20 MHz LTE signal, the DPA can achieve good average efficiency of around 50% with adjacent channel leakage ratio of about –50 dBc after linearization over the frequency band of interest. The linearity improvement of the DPA for multistandard wireless communication system was also verified with a dual-band modulated signal.

  6. AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

    OpenAIRE

    Kühn, J.

    2011-01-01

    This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

  7. High-current relativistic klystron amplifier development for microsecond pulse lengths

    International Nuclear Information System (INIS)

    Fazio, M.V.; Carlsten, B.E.; Faehl, R.; Kwan, T.J.; Rickel, D.G.; Stringfield, R.M.; Tallerico, P.J.

    1991-01-01

    Los Alamos is extending the performance of the Friedman-type, high-current relativistic klystron amplifier (RKA) to the microsecond regime while attempting to achieve the gigawatt-level peak power capability that has been characteristic of the RKA at shorter pulse lengths. Currently the electron beam power into the device is about 1 GW in microsecond duration pulses, with an effort underway to increase the beam power to 2.5 GW. To data the device has yielded an rf modulated electron beam power of 350 MW, with up to 50 MW coupled into waveguide. Several aspects of RKA operation under investigation that affect RKA beam bunching efficiency and amplifier gain include cavity tuning, beam diameter, beam current, and input rf drive power, and the development of an output coupler that efficiently couples the microwave power from the low impedance beam into rectangular waveguide operating in the dominant mode. Current results from experimental testing and code modeling are presented

  8. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

  9. Wideband LTE power amplifier with integrated novel analog pre-distorter linearizer for mobile wireless communications.

    Directory of Open Access Journals (Sweden)

    Eswaran Uthirajoo

    Full Text Available For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC power amplifier (PA is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR and error vector magnitude (EVM specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA's power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics.

  10. Wideband LTE power amplifier with integrated novel analog pre-distorter linearizer for mobile wireless communications.

    Science.gov (United States)

    Uthirajoo, Eswaran; Ramiah, Harikrishnan; Kanesan, Jeevan; Reza, Ahmed Wasif

    2014-01-01

    For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution) power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC) power amplifier (PA) is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD) is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE) of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA's power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics.

  11. Wideband LTE Power Amplifier with Integrated Novel Analog Pre-Distorter Linearizer for Mobile Wireless Communications

    Science.gov (United States)

    Uthirajoo, Eswaran; Ramiah, Harikrishnan; Kanesan, Jeevan; Reza, Ahmed Wasif

    2014-01-01

    For the first time, a new circuit to extend the linear operation bandwidth of a LTE (Long Term Evolution) power amplifier, while delivering a high efficiency is implemented in less than 1 mm2 chip area. The 950 µm × 900 µm monolithic microwave integrated circuit (MMIC) power amplifier (PA) is fabricated in a 2 µm InGaP/GaAs process. An on-chip analog pre-distorter (APD) is designed to improve the linearity of the PA, up to 20 MHz channel bandwidth. Intended for 1.95 GHz Band 1 LTE application, the PA satisfies adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) specifications for a wide LTE channel bandwidth of 20 MHz at a linear output power of 28 dBm with corresponding power added efficiency (PAE) of 52.3%. With a respective input and output return loss of 30 dB and 14 dB, the PA’s power gain is measured to be 32.5 dB while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed APD technique serves to be a good solution to improve linearity of a PA without sacrificing other critical performance metrics. PMID:25033049

  12. Power neodymium-glass amplifier of a repetitively pulsed laser

    Energy Technology Data Exchange (ETDEWEB)

    Vinogradov, Aleksandr V; Gaganov, V E; Garanin, Sergey G; Zhidkov, N V; Krotov, V A; Martynenko, S P; Pozdnyakov, E V; Solomatin, I I [Russian Federal Nuclear Center ' All-Russian Research Institute of Experimental Physics' , Sarov, Nizhnii Novgorod region (Russian Federation)

    2011-11-30

    A neodymium-glass diode-pumped amplifier with a zigzag laser beam propagation through the active medium was elaborated; the amplifier is intended for operation in a repetitively pulsed laser. An amplifier unit with an aperture of 20 Multiplication-Sign 25 mm and a {approx}40-cm long active medium was put to a test. The energy of pump radiation amounts to 140 J at a wavelength of 806 nm for a pump duration of 550 {mu}s. The energy parameters of the amplifier were experimentally determined: the small-signal gain per pass {approx}3.2, the linear gain {approx}0.031 cm{sup -1} with a nonuniformity of its distribution over the aperture within 15%, the stored energy of 0.16 - 0.21 J cm{sup -3}. The wavefront distortions in the zigzag laser-beam propagation through the active element of the amplifier did not exceed 0.4{lambda} ({lambda} = 0.63 {mu}m is the probing radiation wavelength).

  13. Power neodymium-glass amplifier of a repetitively pulsed laser

    International Nuclear Information System (INIS)

    Vinogradov, Aleksandr V; Gaganov, V E; Garanin, Sergey G; Zhidkov, N V; Krotov, V A; Martynenko, S P; Pozdnyakov, E V; Solomatin, I I

    2011-01-01

    A neodymium-glass diode-pumped amplifier with a zigzag laser beam propagation through the active medium was elaborated; the amplifier is intended for operation in a repetitively pulsed laser. An amplifier unit with an aperture of 20 × 25 mm and a ∼40-cm long active medium was put to a test. The energy of pump radiation amounts to 140 J at a wavelength of 806 nm for a pump duration of 550 μs. The energy parameters of the amplifier were experimentally determined: the small-signal gain per pass ∼3.2, the linear gain ∼0.031 cm -1 with a nonuniformity of its distribution over the aperture within 15%, the stored energy of 0.16 - 0.21 J cm -3 . The wavefront distortions in the zigzag laser-beam propagation through the active element of the amplifier did not exceed 0.4λ (λ = 0.63 μm is the probing radiation wavelength).

  14. Impact of Nonlinear Power Amplifier on Link Adaptation Algorithm of OFDM Systems

    DEFF Research Database (Denmark)

    Das, Suvra S.; Tariq, Faisal; Rahman, Muhammad Imadur

    2007-01-01

    The impact of non linear distortion due to High Power Amplifier (HPA) on the performance of Link Adaptation (LA) - Orthogonal Frequency Division Multiplexing (OFDM) based wireless system is analyzed. The performance of both Forward Error Control Coding (FEC) en-coded and uncoded system is evaluated....... LA maximizes the throughput while maintaining a required Block Error Rate (BLER). It is found that when OFDM signal, which has high PAPR, suffers non linear distortion due to non ideal HPA, the LA fails to meet the target BLER. Detailed analysis of the distortion and effects on LA are presented...

  15. High energy high repetition-rate thin-disk amplifier for OPCPA pumping

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, Michael

    2013-08-15

    The development of a pump laser system for a high power and high repetition rate optical parametric chirped-pulse amplification (OPCPA) is presented in this thesis. The OPCPA system requires pump pulse energies in the range of tens of millijoules at high repetition rates with sub-picosecond pulse durations. This can be achieved to some extend with Innoslab amplifier technology. However, scaling to higher pulse energies at high repetition rates may be problematic. With the thin-disk amplifier presented in this thesis, output energies of 140 mJ at 100 kHz repetition rate could be achieved in burst-mode operation, which is a world record for this type of laser amplifier. Due to its material and spectral properties, ytterbium doped YAG (Yb:YAG) is used as a gain medium for the high power amplifier stages. The low quantum defect and the comparatively large emission bandwidth makes this material the choice for high power operation and sub-picosecond compressed pulse durations. The output beam profile as well as the shape of the output bursts is ideal to pump an OPCPA system. An OPCPA output energy in the millijoule range with repetition rates of 100 kHz to 1 MHz is needed to generate seed pulses for the FEL and for the application as pump-probe laser at the FEL facility. Since the development of this laser system needs to meet requirements set by the Free-Electron Laser in Hamburg (FLASH), the amplifier is conceived for burst-mode operation. The main requirement is a high intra-burst pulse repetition rate of more than 100 kHz and a uniform pulse train (burst) with equal properties for every pulse. The burst-mode is an operation mode where the laser never reaches a lasing equilibrium, which means that the behavior of the amplifier is similar to a switch-on of the laser system for every burst. This makes the development of the amplifier system difficult. Therefore, an analytical model has been developed to study the amplification process during the burst. This includes the

  16. High energy high repetition-rate thin-disk amplifier for OPCPA pumping

    International Nuclear Information System (INIS)

    Schulz, Michael

    2013-08-01

    The development of a pump laser system for a high power and high repetition rate optical parametric chirped-pulse amplification (OPCPA) is presented in this thesis. The OPCPA system requires pump pulse energies in the range of tens of millijoules at high repetition rates with sub-picosecond pulse durations. This can be achieved to some extend with Innoslab amplifier technology. However, scaling to higher pulse energies at high repetition rates may be problematic. With the thin-disk amplifier presented in this thesis, output energies of 140 mJ at 100 kHz repetition rate could be achieved in burst-mode operation, which is a world record for this type of laser amplifier. Due to its material and spectral properties, ytterbium doped YAG (Yb:YAG) is used as a gain medium for the high power amplifier stages. The low quantum defect and the comparatively large emission bandwidth makes this material the choice for high power operation and sub-picosecond compressed pulse durations. The output beam profile as well as the shape of the output bursts is ideal to pump an OPCPA system. An OPCPA output energy in the millijoule range with repetition rates of 100 kHz to 1 MHz is needed to generate seed pulses for the FEL and for the application as pump-probe laser at the FEL facility. Since the development of this laser system needs to meet requirements set by the Free-Electron Laser in Hamburg (FLASH), the amplifier is conceived for burst-mode operation. The main requirement is a high intra-burst pulse repetition rate of more than 100 kHz and a uniform pulse train (burst) with equal properties for every pulse. The burst-mode is an operation mode where the laser never reaches a lasing equilibrium, which means that the behavior of the amplifier is similar to a switch-on of the laser system for every burst. This makes the development of the amplifier system difficult. Therefore, an analytical model has been developed to study the amplification process during the burst. This includes the

  17. Study of a high-order-mode gyrotron traveling-wave amplifier

    International Nuclear Information System (INIS)

    Chiu, C. C.; Tsai, C. Y.; Kao, S. H.; Chu, K. R.; Barnett, L. R.; Luhmann, N. C. Jr.

    2010-01-01

    Physics and performance issues of a TE 01 -mode gyrotron traveling-wave amplifier are studied in theory. For a high order mode, absolute instabilities on neighboring modes at the fundamental and higher cyclotron harmonic frequencies impose severe constraints to the device capability. Methods for their stabilization are outlined, on the basis of which the performance characteristics are examined in a multidimensional parameter space under the marginal stability criterion. The results demonstrate the viability of a high-order-mode traveling-wave amplifier and provide a roadmap for design tradeoffs among power, bandwidth, and efficiency. General trends are observed and illustrated with specific examples.

  18. An S-band high gain relativistic klystron amplifier with high phase stability

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Li, Z. H.; Xu, Z.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China)

    2014-11-15

    For the purpose of coherent high power microwave combining, an S-band high gain relativistic klystron amplifier with high phase stability is presented and studied. By the aid of 3D particle-in-cell code and circuit simulation software, the mechanism of parasitic oscillation in the device is investigated. And the RF lossy material is adopted in the simulation and experiment to suppress the oscillation. The experimental results show that with an input RF power of 10 kW, a microwave pulse with power of 1.8 GW is generated with a gain of 52.6 dB. And the relative phase difference fluctuation between output microwave and input RF signal is less than ±10° in 90 ns.

  19. High SBS-Threshold Er/Yb Co-Doped Phosphate Glass Fiber Amplifiers for High Power, Sub-us Pulsed, Narrow Linewidth, All Fiber-Based Laser Transmitter, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase I, NP Photonics has achieved 1.2 kW peak power for 105 ns fiber laser pulses, and successfully demonstrated the feasibility to produce monolithic high SBS...

  20. A high gain energy amplifier operated with fast neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Rubbia, C. [CERN, Geneva (Switzerland)

    1995-10-01

    The basic concept and the main practical considerations of an Energy Amplifier (EA) have been exhaustively described elsewhere. Here the concept of the EA is further explored and additional schemes are described which offer a higher gain, a larger maximum power density and an extended burn-up. All these benefits stem from the use of fast neutrons, instead of thermal or epithermal ones, which was the case in the original study. The higher gain is due both to a more efficient high energy target configuration and to a larger, practical value of the multiplication factor. The higher power density results from the higher permissible neutron flux, which in turn is related to the reduced rate of {sup 233}Pa neutron captures (which, as is well known, suppress the formation of the fissile {sup 233}U fuel) and the much smaller k variations after switch-off due to {sup 233}Pa decays for a given burn-up rate. Finally a longer integrated burn-up is made possible by reduced capture rate by fission fragments of fast neutrons. In practice a 20 MW proton beam (20 mA @ 1 GeV) accelerated by a cyclotron will suffice to operate a compact EA at the level of {approx} 1 GW{sub e}. The integrated fuel burn-up can be extended in excess of 100 GW d/ton, limited by the mechanical survival of the fuel elements. Radio-Toxicity accumulated at the end of the cycle is found to be largely inferior to the one of an ordinary Reactor for the same energy produced. Schemes are proposed which make a {open_quotes}melt-down{close_quotes} virtually impossible. The conversion ratio, namely the rate of production of {sup 233}U relative to consumption is generally larger than unity, which permits production of fuel for other uses. Alternatively the neutron excess can be used to transform unwanted {open_quotes}ashes{close_quotes} into more acceptable elements.

  1. Development of three channel linear bipolar high voltage amplifier (±2 KV) for electrostatic steerer

    International Nuclear Information System (INIS)

    Rajesh Kumar; Mukesh Kumar; Suman, S.K.; Safvan, C.P.; Mandal, A.

    2011-01-01

    Electrostatic steerers and scanners are planned for low energy ion beam facilities at IUAC to steer and scan the ion beam on target. The power supplies for electrostatic steerers are high voltage bipolar DC amplifiers and for scanners are bipolar AC amplifiers. To fulfil the requirements a common unit has been designed and assembled for AC and DC applications. It can be used with electrostatic devices in scanning, steering and sweeping of low energy ion beams at high frequencies to attain uniform implantation. The unit consist of three independent limited bandwidth high voltage, linear bipolar amplifiers (for X-axis, Y-axis and Y1-dog leg plates). The unit has been provided with both local and remote control. (author)

  2. A compact 500 MHz 4 kW Solid-State Power Amplifier for accelerator applications

    Energy Technology Data Exchange (ETDEWEB)

    Gaspar, M., E-mail: marcos.gaspar@psi.c [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland); Pedrozzi, M. [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland); Ferreira, L.F.R. [Department of Physics, University of Coimbra, 3004-516 Coimbra (Portugal); Garvey, T. [Paul Scherrer Institute, CH 5232 Villigen PSI (Switzerland)

    2011-05-01

    We present the development of a compact narrow-band Solid-State Power Amplifier (SSPA). We foresee a promising application of solid-state amplifiers specifically in accelerators for new generation synchrotron light sources. Such a new technology has reached a competitive price/performance ratio and expected lifetime in comparison with klystron and IOT amplifiers. The increasing number of synchrotron light sources using 500 MHz as base frequency justifies the effort in the development of the proposed amplifier. Two different techniques are also proposed to improve the control and performance of these new distributed amplification systems which we call, respectively, complete distributed system and forced compression.

  3. A compact 500 MHz 4 kW Solid-State Power Amplifier for accelerator applications

    International Nuclear Information System (INIS)

    Gaspar, M.; Pedrozzi, M.; Ferreira, L.F.R.; Garvey, T.

    2011-01-01

    We present the development of a compact narrow-band Solid-State Power Amplifier (SSPA). We foresee a promising application of solid-state amplifiers specifically in accelerators for new generation synchrotron light sources. Such a new technology has reached a competitive price/performance ratio and expected lifetime in comparison with klystron and IOT amplifiers. The increasing number of synchrotron light sources using 500 MHz as base frequency justifies the effort in the development of the proposed amplifier. Two different techniques are also proposed to improve the control and performance of these new distributed amplification systems which we call, respectively, complete distributed system and forced compression.

  4. 75 GHz InP DHBT power amplifier based on two-stacked transistors

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke

    2017-01-01

    In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm....

  5. Comparison of Power Supply Pumping of Switch-Mode Audio Power Amplifiers with Resistive Loads and Loudspeakers as Loads

    DEFF Research Database (Denmark)

    Knott, Arnold; Petersen, Lars Press

    2013-01-01

    Power supply pumping is generated by switch-mode audio power amplifiers in half-bridge configuration, when they are driving energy back into their source. This leads in most designs to a rising rail voltage and can be destructive for either the decoupling capacitors, the rectifier diodes...... in the power supply or the power stage of the amplifier. Therefore precautions are taken by the amplifier and power supply designer to avoid those effects. Existing power supply pumping models are based on an ohmic load attached to the amplifier. This paper shows the analytical derivation of the resulting...... waveforms and extends the model to loudspeaker loads. Measurements verify, that the amount of supply pumping is reduced by a factor of 4 when comparing the nominal resistive load to a loudspeaker. A simplified and more accurate model is proposed and the influence of supply pumping on the audio performance...

  6. Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz

    Science.gov (United States)

    Fung, King Man; Ward, John; Chattopadhyay, Goutam; Lin, Robert H.; Samoska, Lorene A.; Kangaslahti, Pekka P.; Mehdi, Imran; Lambrigtsen, Bjorn H.; Goldsmith, Paul F.; Soria, Mary M.; hide

    2011-01-01

    Future remote sensing instruments will require focal plane spectrometer arrays with higher resolution at high frequencies. One of the major components of spectrometers are the local oscillator (LO) signal sources that are used to drive mixers to down-convert received radio-frequency (RF) signals to intermediate frequencies (IFs) for analysis. By advancing LO technology through increasing output power and efficiency, and reducing component size, these advances will improve performance and simplify architecture of spectrometer array systems. W-band power amplifiers (PAs) are an essential element of current frequency-multiplied submillimeter-wave LO signal sources. This work utilizes GaN monolithic millimeter-wave integrated circuit (MMIC) PAs developed from a new HRL Laboratories LLC 0.15- m gate length GaN semiconductor transistor. By additionally waveguide power combining PA MMIC modules, the researchers here target the highest output power performance and efficiency in the smallest volume achievable for W-band.

  7. Muscle trade-offs in a power-amplified prey capture system.

    Science.gov (United States)

    Blanco, M Mendoza; Patek, S N

    2014-05-01

    Should animals operating at great speeds and accelerations use fast or slow muscles? The answer hinges on a fundamental trade-off: muscles can be maximally fast or forceful, but not both. Direct lever systems offer a straightforward manifestation of this trade-off, yet the fastest organisms use power amplification, not direct lever action. Power-amplified systems typically use slow, forceful muscles to preload springs, which then rapidly release elastic potential energy to generate high speeds and accelerations. However, a fast response to a stimulus may necessitate fast spring-loading. Across 22 mantis shrimp species (Stomatopoda), this study examined how muscle anatomy correlates with spring mechanics and appendage type. We found that muscle force is maximized through physiological cross-sectional area, but not through sarcomere length. Sit-and-wait predators (spearers) had the shortest sarcomere lengths (fastest contractions) and the slowest strike speeds. The species that crush shells (smashers) had the fastest speeds, most forceful springs, and longest sarcomeres. The origin of the smasher clade yielded dazzlingly high accelerations, perhaps due to the release from fast spring-loading for evasive prey capture. This study offers a new window into the dynamics of force-speed trade-offs in muscles in the biomechanical, comparative evolutionary framework of power-amplified systems. © 2014 The Author(s). Evolution © 2014 The Society for the Study of Evolution.

  8. Audio power amplifier techniques with energy efficient power conversion. Vol. 1

    Energy Technology Data Exchange (ETDEWEB)

    Nielsen, Karsten

    1998-04-01

    A fundamental study of both analog and digital pulse modulation methods is carried out. A novel class of multi-level pulse modulation methods - Phase Shifted Carrier Pulse Width Modulation (PSCPWM) - is introduced and show to have several advantageous features, primarily caused by the much improved synthesis of the modulating signal. Enhanced digital pulse modulation methods for digital Pulse Modulation Amplifier (PMA) systems are investigated, and a simple methodology for digital PWM modulator synthesis is devised. It is concluded, that the modulator performance is not a limitation in the system, regardless of the domain of modulator implementation. Power conversion in PMA systems is adressed from the perspective of both linearity and efficienty optimization. Based on detailed studies of the distortion mechanisms in the power conversion stage it is concluded, that this is the fundamental limitation on system performance due to several physical limitations. The analysis of general power stage efficiency concludes that dramatic improvements in energy efficiency are possible with PMA systems that are optimized for efficiency. A control system design methodology is devised as a platform for synthesis of robust control systems. Investigations of three fundamental control structures show that even simple control systems offer a remarkable value, although the considered topologies also have their limitations which is verified by practical evaluation in hardware. A novel control method is introduced - Multivariable Enhanced Cascade Control (MECC). MECC provides flexible control over all essential system parameters and is furthermore simple in realization. Practical evaluation of a MECC based PMA shows state-of-the-art performance. The application of non-linear control methods is investigated with the introduction of an enhanced non-linear control/modulator topology. Although the non-linear controller is theoretically interesting, the method proves to suffer from various

  9. Improvement of out-of-band Behaviour in Switch-Mode Amplifiers and Power Supplies by their Modulation Topology

    DEFF Research Database (Denmark)

    Knott, Arnold

    2010-01-01

    Switch-mode power electronics is disturbing other electronic circuits by emission of electromagnetic waves and signals. To allow transmission of information, a set of regulatory rules (electromagnetic compatibility (EMC)) were created to limit this disturbance. To fulfill those rules in power...... electronics, shielding and filtering is required, which is limiting the size reduction. The motivation for this project was to find alternative ways to avoid trouble with interference of switch-mode power electronics and transmission and receiver circuits. An especial focus is given to audio power amplifiers....... After a historical overview and description of interaction between power electronics and electromagnetic compatibility (chapter 1), the thesis will first show the impact of the high frequency signals on the audio performance of switch-mode audio power amplifiers (chapter 2). Therefore the work of others...

  10. Behavioral modeling of microwave power amplifiers using a look up table method

    NARCIS (Netherlands)

    Shen, Y.; Gajadharsing, J.; Tauritz, J.L.

    2007-01-01

    The possibility of building a microwave power amplifier (PA) behavioral model based on the look-up table principle is investigated. The model so constructed avoids the difficulties in model structure selection and/or its parameter estimation.

  11. Development of amplifier and shaper for high-rate MWPC

    International Nuclear Information System (INIS)

    Kamiji, Ichinori; Nanjo, Hajime; Kawasaki, Naoki; Maeda, Yosuke; Naito, Daichi; Seki, Shigeto; Nakagiri, Kota; Sasao, Noboru; Nomura, Tadashi

    2015-01-01

    A multi-wire proportional chamber (MWPC) will be used as an in-beam charged particle detector for the J-PARC E14 (KOTO) experiment. The maximum counting rate of the MWPC is expected to be up to 1 MHz per channel due to the high neutron and photon flux, expected to be 1 GHz for the 30 x 30 cm"2 area. An amplifier to cope with such high counting-rate is required. We developed a prototype of such amplifier, which has a charge preamplifier with the integration time of 3 ns and a pulse shaping part with three pole-zero cancellation networks. The shaper reduced the characteristic long tail lasting tens of microseconds in the signal of MWPC to 150 ns. Its performance has been tested by using a single-channel MWPC which has almost the same geometrical parameters as the MWPC to be installed in the KOTO experiment. (author)

  12. Wide bandwidth transimpedance amplifier for extremely high sensitivity continuous measurements.

    Science.gov (United States)

    Ferrari, Giorgio; Sampietro, Marco

    2007-09-01

    This article presents a wide bandwidth transimpedance amplifier based on the series of an integrator and a differentiator stage, having an additional feedback loop to discharge the standing current from the device under test (DUT) to ensure an unlimited measuring time opportunity when compared to switched discharge configurations while maintaining a large signal amplification over the full bandwidth. The amplifier shows a flat response from 0.6 Hz to 1.4 MHz, the capability to operate with leakage currents from the DUT as high as tens of nanoamperes, and rail-to-rail dynamic range for sinusoidal current signals independent of the DUT leakage current. Also available is a monitor output of the stationary current to track experimental slow drifts. The circuit is ideal for noise spectral and impedance measurements of nanodevices and biomolecules when in the presence of a physiological medium and in all cases where high sensitivity current measurements are requested such as in scanning probe microscopy systems.

  13. Power amplifiers for the S-, C-, X- and Ku-bands an EDA perspective

    CERN Document Server

    Božanić, Mladen

    2016-01-01

    This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.

  14. An ultra-low-power pulse oximeter implemented with an energy-efficient transimpedance amplifier.

    Science.gov (United States)

    Tavakoli, M; Turicchia, L; Sarpeshkar, R

    2010-02-01

    Pulse oximeters are ubiquitous in modern medicine to noninvasively measure the percentage of oxygenated hemoglobin in a patient's blood by comparing the transmission characteristics of red and infrared light-emitting diode light through the patient's finger with a photoreceptor. We present an analog single-chip pulse oximeter with 4.8-mW total power dissipation, which is an order of magnitude below our measurements on commercial implementations. The majority of this power reduction is due to the use of a novel logarithmic transimpedance amplifier with inherent contrast sensitivity, distributed amplification, unilateralization, and automatic loop gain control. The transimpedance amplifier, together with a photodiode current source, form a high-performance photoreceptor with characteristics similar to those found in nature, which allows LED power to be reduced. Therefore, our oximeter is well suited for portable medical applications, such as continuous home-care monitoring for elderly or chronic patients, emergency patient transport, remote soldier monitoring, and wireless medical sensing. Furthermore, our design obviates the need for an A-to-D and digital signal processor and leads to a small single-chip solution. We outline how extensions of our work could lead to submilliwatt oximeters.

  15. Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Maroldt, Stephan

    2012-07-01

    Highly-efficient switch-mode power amplifiers form key elements in future fully-digital base stations for mobile communication. This novel digital base station concept reduces system energy consumption, complexity, size and costs, while the flexibility in terms of multi-band operation and signal modulation improves. In this work, innovative core circuits for digital high-efficiency class-D and class-S power amplifiers based on gallium nitride (GaN) technology were developed for the application in digital base stations. A combination of optimized GaN devices and improvements in circuit design allow a highly-efficient switch-mode operation at mobile communication frequencies between 0.45 GHz and 2 GHz. Transistor device modeling for switch-mode operation, the simulation environment, and a broadband measurement system were established for the design and evaluation of digital switchmode power amplifiers. The design of broadband core circuits for switch-mode amplifier concepts was analyzed for dual-stage amplifier circuits, using an initial GaN technology with a gate length of 0.25 {mu}m. A speed-enhanced driver stage improved the circuit switching speed sufficiently above 1 GHz. Speed and efficiency of the amplifier core circuits were studied related to transistor parameters like cut-off frequency or gate capacitance. A reduced gate length was found to improve the switching speed, while a lower on-resistance allows the reduction of the inherent static losses of the GaN-based switches. Apart from this, the restriction of a 50 Ohm environment was found to be a major output power and switching speed limitation, due to a poor switching drive capability of the input capacitance of the GaN circuit. Finally, the optimized transistor and circuit design with an output gate width of 1.2 mm were effectively implemented in the given environment for an operation up to 2 GHz with a high drain efficiency of >65% and a digital output power of 5 W. A maximum output power of 9.7 W and a

  16. CMOS 60-GHz and E-band power amplifiers and transmitters

    CERN Document Server

    Zhao, Dixian

    2015-01-01

    This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

  17. Design and study of photomultiplier pulse-shaping amplifier powered by the current flowing through a voltage divider

    International Nuclear Information System (INIS)

    Vladimir Popov

    2003-01-01

    A new version of Photomultiplier Tube (PMT) pulse amplifier, entirely powered by the current flowing through the base voltage divider, was designed and tested. This amplifier was designed for application in the JLAB G0 Experiment E00-006 as a part of high voltage base for XP2262 Photonis PMT. According to JLAB G0 experiment requirement, these PMT's operate with plastic scintillators at high counting rate (about MHz). Tests in JLAB experimental Hall C indicate that low energy gamma background cause up to 0.1 mA of PMT average anode current (without amplifier). At this radiation condition, PMT gain decreases by 50% within about 1 month of operation. The amplifier needs to reduce PMT anode current and to shape PMT anode pulse prior to sending it through a long cable line (more then 400 ft of RG-213 and RG-58 coax cables). Shaping of the PMT output pulse helps to reduce attenuation effect of the long cable line without significant reduction of timing accuracy. The results of this study of designed amplifier and PMT plus amplifier system are presented

  18. A describing function approach to bipolar RF-power amplifier simulation

    DEFF Research Database (Denmark)

    Vidkjær, Jens

    1981-01-01

    A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the term...

  19. Power Scaling of Laser Oscillators and Amplifiers Based on Nd:YVO4

    OpenAIRE

    Yarrow, Michael James

    2006-01-01

    This thesis presents a strategy for power and brightness scaling in diode-end-pumped, master-oscillator-power-amplifier laser systems, based on Nd:YVOIssues relating to further power and brightness scaling are discussed as well as the potential applications of these laser sources as pump sources for frequency conversion in optical parametric devices.

  20. Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in Gallium Nitride HFET Technology Using the Doherty technique

    Science.gov (United States)

    Seneviratne, Sashieka

    With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as 'pico-cells' are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm2 monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are

  1. The Use of a Solid State Analog Television Transmitter as a Superconducting Electron Gun Power Amplifier

    Energy Technology Data Exchange (ETDEWEB)

    J.G. Kulpin, K.J. Kleman, R.A. Legg

    2012-07-01

    A solid state analog television transmitter designed for 200 MHz operation is being commissioned as a radio frequency power amplifier on the Wisconsin superconducting electron gun cavity. The amplifier consists of three separate radio frequency power combiner cabinets and one monitor and control cabinet. The transmitter employs rugged field effect transistors built into one kilowatt drawers that are individually hot swappable at maximum continuous power output. The total combined power of the transmitter system is 33 kW at 200 MHz, output through a standard coaxial transmission line. A low level radio frequency system is employed to digitally synthesize the 200 MHz signal and precisely control amplitude and phase.

  2. Linearizing of Low Noise Power Amplifier Using 5.8GHz Double Loop Feedforward Linearization Technique

    Directory of Open Access Journals (Sweden)

    Abdulkareem Mokif Obais

    2017-05-01

    Full Text Available In this paper, a double loop feedforward linearization technique is analyzed and built with a MMIC low noise amplifier “HMC753” as main amplifier and a two-stage class-A power amplifier as error amplifier. The system is operated with 5V DC supply at a center frequency of 5.8GHz and a bandwidth of 500MHz. The proposed technique, increases the linearity of the MMIC amplifier from 18dBm at 1dB compression point to more than 26dBm. In addition, the proposed system is tested with OFDM signal and it reveals good response in maximizing the linearity region and eliminating distortions. The proposed system is designed and simulated onAdvanced Wave Research-Microwave Office (AWR-MWO.

  3. 45-GHz and 60-GHz 90 nm CMOS power amplifiers with a fully symmetrical 8-way transformer power combiner

    Institute of Scientific and Technical Information of China (English)

    Zhengdong JIANG; Kaizhe GUO; Peng HUANG; Yiming FAN; Chenxi ZHAO; Yongling BAN; Jun LIU; Kai KANG

    2017-01-01

    In this paper,45 GHz and 60 GHz power amplifiers (PAs) with high output power have been successfully designed by using 90 nm CMOS process.The 45 GHz (60 GHz) PA consists of two (four) differential stages.The sizes of transistors have been designed in an appropriate way so as to trade-off gain,efficiency and stability.Due to limited supply voltage and low breakdown voltage of CMOS MOSFET compared with the traditional Ⅲ-Ⅴ technologies,the technique of power combining has been applied to achieve a high output power.In particular,a novel 8-way distributed active transformer power combiner has been proposed for realizing such mm-wave PA.The proposed transformer combiner with a fully symmetrical layout can improve its input impedance balance at mm-wave frequency regime significantly.Taking its advantages of this novel transformer based power combiner,our realized 45 GHz (60 GHz) mm-wave PA has achieved the gain of 20.3 dB (16.8 dB),the maximum PAE of 14.5% (13.4%) and the saturated output power of 21 dBm (21 dBm) with the 1.2 V supply voltage.

  4. High rate amplifier-digitizer system for liquid argon calorimeters

    International Nuclear Information System (INIS)

    Droege, T.F.; Lobkowicz, F.; Fukushima, Y.

    1978-01-01

    A low-cost charge amplifier for a liquid argon photon detector and a new method for pulse height analysis are described. This scheme is suitable for high-energy photon detection with high counting rate. Samples of preamplifer output are taken just before and just after the arrival of the charge from the detector. The difference of these samples provides a stable pedestal and rejects low frequency noise. Short two-pulse resolving time (approximately equal to 200ns) is achieved. 6 refs

  5. Maximizing power output from continuous-wave single-frequency fiber amplifiers.

    Science.gov (United States)

    Ward, Benjamin G

    2015-02-15

    This Letter reports on a method of maximizing the power output from highly saturated cladding-pumped continuous-wave single-frequency fiber amplifiers simultaneously, taking into account the stimulated Brillouin scattering and transverse modal instability thresholds. This results in a design figure of merit depending on the fundamental mode overlap with the doping profile, the peak Brillouin gain coefficient, and the peak mode coupling gain coefficient. This figure of merit is then numerically analyzed for three candidate fiber designs including standard, segmented acoustically tailored, and micro-segmented acoustically tailored photonic-crystal fibers. It is found that each of the latter two fibers should enable a 50% higher output power than standard photonic crystal fiber.

  6. Operation amplifier

    NARCIS (Netherlands)

    Tetsuya, Saito; Nauta, Bram

    2008-01-01

    To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a differential amplifier circuit 1;

  7. 2.45 GHz Class E Power Amplifier for a Transmitter Combining LINC and EER

    Directory of Open Access Journals (Sweden)

    M. Dirix

    2009-01-01

    Full Text Available A 10 W class-E RF power amplifier (PA is designed and fabricated using a Cree GaN HEMT. The proposed PA uses an innovative input circuit to optimize band with. At 2.45 GHz the PA achieves a PAE of 60 % at an outputpower of 40 dBm. The resulting amplifier is simulated and constructed using a transmissionline topology. Two of these amplifiers are fabricated on a single board for outphasing application. Their suitability for outphasing application and supply modulation is investigated. 

  8. Design of a high-gain laser diode-array pumped Nd:YAG alternating precessive slab amplifier (APS amplifier)

    Science.gov (United States)

    Coyle, D. B.

    1991-01-01

    In the design of space-qualifiable laser systems for ranging and altimetry, such as NASA's Geodynamic Laser Ranging System (GLRS), the transmitter must be kept small, powerful yet efficient, and must consist of as few components as possible. A novel preamplifier design is examined which requires no external beam steering optics, yielding a compact component with simple alignment procedures. The gains achieved are comparable to multipass zigzag amplifiers using two or more sets of external optics for extra passes through the amplifying medium.

  9. Giant Pulse Phenomena in a High Gain Erbium Doped Fiber Amplifier

    Science.gov (United States)

    Li, Stephen X.; Merritt, Scott; Krainak, Michael A.; Yu, Anthony

    2018-01-01

    High gain Erbium Doped Fiber Amplifiers (EDFAs) are vulnerable to optical damage when unseeded, e.g. due to nonlinear effects that produce random, spontaneous Q-switched (SQS) pulses with high peak power, i.e. giant pulses. Giant pulses can damage either the components within a high gain EDFA or external components and systems coupled to the EDFA. We explore the conditions under which a reflective, polarization-maintaining (PM), core-pumped high gain EDFA generates giant pulses, provide details on the evolution of normal pulses into giant pulses, and provide results on the transient effects of giant pulses on an amplifier's fused-fiber couplers, an effect which we call Fiber Overload Induced Leakage (FOIL). While FOIL's effect on fused-fiber couplers is temporary, its damage to forward pump lasers in a high gain EDFA can be permanent.

  10. High Power laser power conditioning system new discharge circuit research

    CERN Document Server

    Li Yi; Peng Han Sheng; Zhou Pei Zhang; Zheng Wan Guo; Guo Lang Fu; Chen Li Hua; Chen De Hui; Lai Gui You; Luan Yong Ping

    2002-01-01

    The new discharge circuit of power conditioning system for high power laser is studied. The theoretical model of the main discharge circuit is established. The pre-ionization circuit is studied in experiment. In addition, the explosion energy of the new large xenon lamp is successfully measured. The conclusion has been applied to 4 x 2 amplifier system

  11. Final installation and testing of the feedback power amplifier for the Scyllac feedback experiment

    International Nuclear Information System (INIS)

    Kutac, K.J.; Kewish, R.W. Jr.; Gribble, R.F.; Rawcliffe, A.S.; Miller, G.; Kemp, E.L.; Bartsch, R.R.

    1975-01-01

    The Scyllac feedback system consists of eight subsystems. The installation and testing of the many components and eight subsystems are described. The eight subsystems are: (1) ML-8618 power amplifiers; (2) dc plate and bias power supplies; (3) ac filament power supplies; (4) position detector and signal processor (intermediate amplifier); (5) l = 0 and l = 2 output load coils; (6) control system and interlock system; (7) computer controlled analog-to-digital transient recorders; and (8) cable distribution and cooling-water supply system

  12. High power coaxial ubitron

    Science.gov (United States)

    Balkcum, Adam J.

    In the ubitron, also known as the free electron laser, high power coherent radiation is generated from the interaction of an undulating electron beam with an electromagnetic signal and a static periodic magnetic wiggler field. These devices have experimentally produced high power spanning the microwave to x-ray regimes. Potential applications range from microwave radar to the study of solid state material properties. In this dissertation, the efficient production of high power microwaves (HPM) is investigated for a ubitron employing a coaxial circuit and wiggler. Designs for the particular applications of an advanced high gradient linear accelerator driver and a directed energy source are presented. The coaxial ubitron is inherently suited for the production of HPM. It utilizes an annular electron beam to drive the low loss, RF breakdown resistant TE01 mode of a large coaxial circuit. The device's large cross-sectional area greatly reduces RF wall heat loading and the current density loading at the cathode required to produce the moderate energy (500 keV) but high current (1-10 kA) annular electron beam. Focusing and wiggling of the beam is achieved using coaxial annular periodic permanent magnet (PPM) stacks without a solenoidal guide magnetic field. This wiggler configuration is compact, efficient and can propagate the multi-kiloampere electron beams required for many HPM applications. The coaxial PPM ubitron in a traveling wave amplifier, cavity oscillator and klystron configuration is investigated using linear theory and simulation codes. A condition for the dc electron beam stability in the coaxial wiggler is derived and verified using the 2-1/2 dimensional particle-in-cell code, MAGIC. New linear theories for the cavity start-oscillation current and gain in a klystron are derived. A self-consistent nonlinear theory for the ubitron-TWT and a new nonlinear theory for the ubitron oscillator are presented. These form the basis for simulation codes which, along

  13. Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2004-01-01

    This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion...

  14. Design of mm-wave InP DHBT power amplifiers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Yan, Lei

    2011-01-01

    In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

  15. Frequency dependent loss analysis and minimization of system losses in switchmode audio power amplifiers

    DEFF Research Database (Denmark)

    Yamauchi, Akira; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2014-01-01

    In this paper, frequency dependent losses in switch-mode audio power amplifiers are analyzed and a loss model is improved by taking the voltage dependence of the parasitic capacitance of MOSFETs into account. The estimated power losses are compared to the measurement and great accuracy is achieved...

  16. A high efficiency Ku-band radial line relativistic klystron amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Dang, Fangchao; Zhang, Xiaoping, E-mail: zhangxiaoping@nudt.edu.cn; Zhong, Huihuang; Zhang, Jun; Ju, Jinchuan [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2016-07-15

    To achieve the gigawatt-level microwave amplification output at Ku-band, a radial-line relativistic klystron amplifier is proposed and investigated in this paper. Different from the annular electron beam in conventional axial relativistic klystron amplifiers, a radial-radiated electron beam is employed in this proposed klystron. Owing to its radially spreading speciality, the electron density and space charge effect are markedly weakened during the propagation in the radial line drift tube. Additionally, the power capacity, especially in the output cavity, is enhanced significantly because of its large volume, which is profitable for the long pulse operation. Particle-in-cell simulation results demonstrate that a high power microwave with the power of 3 GW and the frequency of 14.25 GHz is generated with a 500 kV, 12 kA electron beam excitation and the 30 kW radio-frequency signal injection. The power conversion efficiency is 50%, and the gain is about 50 dB. Meanwhile, there is insignificant electron beam self-excitation in the proposed structure by the adoption of two transverse electromagnetic reflectors. The relative phase difference between the injected signals and output microwaves keeps stable after the amplifier saturates.

  17. Design considerations of a MW-scale, high-efficiency, industrial-use, ultraviolet FEL amplifier

    International Nuclear Information System (INIS)

    Pagani, C.; Saldin, E.L.; Schneidmiller, E.A.; Yurkov, M.V.

    2000-01-01

    Theoretical and experimental work in free electron laser (FEL) physics, and the physics of particle accelerators over the last 10 years has pointed to the possibility of the generation of MW-level optical beams with laser-like characteristics in the ultraviolet (UV) spectral range. The concept is based on generation of the radiation in the master oscillator-power FEL amplifier (MOPA) configuration. The FEL amplifier concept eliminates the need for an optical cavity. As a result, there are no thermal loading limitations to increase the average output power of this device up to the MW-level. The problem of a tunable master oscillator can be solved with available conventional quantum lasers. The use of a superconducting energy-recovery linac could produce a major, cost-effective facility with wall plug power to output optical power efficiency of about 20% that spans wavelengths from the visible to the deep ultraviolet regime. The stringent electron beam qualities required for UV FEL amplifier operation can be met with a conservative injector design (using a conventional thermionic gun and subharmonic bunchers) and the beam compression and linear acceleration technology, recently developed in connection with high-energy linear collider and X-ray FEL programs

  18. Stability investigation for InP DHBT mm‐wave power amplifier

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

    2013-01-01

    microwave integrated circuit power amplifier. Experimental results from a redesigned power amplifier with improved stability are presented to confirm that the previously detected oscillation loop is removed using odd‐mode stabilization resistors with the correct choice of values and locations. © 2012 Wiley......In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K......‐Δs pair, linear three‐port graphical analysis, system identifications, circuit modal analysis, and normalized determinant function are all reviewed. The corresponding techniques are employed to predict the occurrence of instability at 15 GHz observed during measurements on a fabricated monolithic...

  19. Design and analysis of optimised class E power amplifier using shunt capacitance in the output structure

    Science.gov (United States)

    Hayati, Mohsen; Roshani, Sobhan; Zirak, Ali Reza

    2017-05-01

    In this paper, a class E power amplifier (PA) with operating frequency of 1 MHz is presented. MOSFET non-linear drain-to-source parasitic capacitance, linear external capacitance at drain-to-source port and linear shunt capacitance in the output structure are considered in design theory. One degree of freedom is added to the design of class E PA, by assuming the shunt capacitance in the output structure in the analysis. With this added design degree of freedom it is possible to achieve desired values for several parameters, such as output voltage, load resistance and operating frequency, while both zero voltage and zero derivative switching (ZVS and ZDS) conditions are satisfied. In the conventional class E PA, high value of peak switch voltage results in limitations for the design of amplifier, while in the presented structure desired specifications could be achieved with the safe margin of peak switch voltage. The results show that higher operating frequency and output voltage can also be achieved, compared to the conventional structure. PSpice software is used in order to simulate the designed circuit. The presented class E PA is designed, fabricated and measured. The measured results are in good agreement with simulation and theory results.

  20. Debugging of Class-D Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Crone, Lasse; Pedersen, Jeppe Arnsdorf; Mønster, Jakob Døllner

    2012-01-01

    Determining and optimizing the performance of a Class-D audio power amplier can be very dicult without knowledge of the use of audio performance measuring equipment and of how the various noise and distortion sources in uence the audio performance. This paper gives an introduction on how to measure...

  1. Linearization and efficiency enhancement techniques for silicon power amplifiers from RF to mmW

    CERN Document Server

    Kerhervé, Eric

    2015-01-01

    This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniquesThe arch

  2. Pump Side-scattering in Ultra-powerful Backward Raman Amplifiers

    International Nuclear Information System (INIS)

    Solodov, A.A.; Malkin, V.M.; Fisch, N.J.

    2004-01-01

    Extremely large laser power might be obtained by compressing laser pulses through backward Raman amplification (BRA) in plasmas. Premature Raman backscattering of a laser pump by plasma noise might be suppressed by an appropriate detuning of the Raman resonance, even as the desired amplification of the seed persists with a high efficiency. In this paper, we analyze side-scattering of laser pumps by plasma noise in backward Raman amplifiers. Though its growth rate is smaller than that of backscattering, the side-scattering can nevertheless be dangerous, because of a longer path of side-scattered pulses in plasmas and because of an angular dependence of the Raman resonance detuning. We show that side-scattering of laser pumps by plasma noise in BRA might be suppressed to a tolerable level at all angles by an appropriate combination of two detuning mechanisms associated with plasma density gradient and pump chirp

  3. Study of complete interconnect reliability for a GaAs MMIC power amplifier

    Science.gov (United States)

    Lin, Qian; Wu, Haifeng; Chen, Shan-ji; Jia, Guoqing; Jiang, Wei; Chen, Chao

    2018-05-01

    By combining the finite element analysis (FEA) and artificial neural network (ANN) technique, the complete prediction of interconnect reliability for a monolithic microwave integrated circuit (MMIC) power amplifier (PA) at the both of direct current (DC) and alternating current (AC) operation conditions is achieved effectively in this article. As a example, a MMIC PA is modelled to study the electromigration failure of interconnect. This is the first time to study the interconnect reliability for an MMIC PA at the conditions of DC and AC operation simultaneously. By training the data from FEA, a high accuracy ANN model for PA reliability is constructed. Then, basing on the reliability database which is obtained from the ANN model, it can give important guidance for improving the reliability design for IC.

  4. Calculation of the output power in self-amplified spontaneous radiation using scaling of power with number of simulation particles

    International Nuclear Information System (INIS)

    Yu, L.H.

    1998-01-01

    Recent advances in self-amplified spontaneous emission (SASE) experiments stimulate interest in quantitative comparison of measurements with theory. In this paper we show that the widely used simulation code TDA3D, developed by Tran and Wurtele [Comput. Phys. Commun. 54, 263 (1989)] even though a single frequency code, can be used to determine the output power in the SASE process with excellent approximation in the exponential growth regime. The method applies when the gain is not very high, which is a special advantage, because when the gain is not very high, the analytical calculation is particularly difficult since the exponential growing term does not dominate. The analysis utilizes a scaling relation between the output power and the number of simulation particles in the code TDA3D: left-angle P right-angle=N λ ' /N λ left-angle P ' right-angle, where left-angle P right-angle is the output power and N λ is the line density of the electrons, while left-angle P ' right-angle is the calculated output power using a line density N λ ' of the number of simulation particles in the code TDA3D. Because of the scaling property, the number of simulation particles can be taken to be many orders of magnitude less than the actual experiment. Comparison of our results with experiment yields new insight into the SASE process. copyright 1998 The American Physical Society

  5. An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

    Energy Technology Data Exchange (ETDEWEB)

    Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin' an, E-mail: wangxa@szpku.edu.c [Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055 (China)

    2009-06-01

    One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 mum{sup 2} without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

  6. An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

    International Nuclear Information System (INIS)

    Feng Xiaoxing; Zhang Xing; Ge Binjie; Wang Xin'an

    2009-01-01

    One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available, especially no high density capacitor. To address this problem, a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process. This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal (MIM) capacitor regarding their capacitor density. Detailed simulations are carried out for the leakage, the voltage dependency, the temperature dependency, and the quality factor between an inter-metal shuffled (IMS) capacitor and an MIM capacitor. Finally, an IMS capacitor is chosen to perform the inter-stage matching. The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application. The PA occupies 370 x 200 μm 2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

  7. IOT based RF power systems as an alternative to klystron amplifier in Indus-2 at the rate 505.812 MHz

    International Nuclear Information System (INIS)

    Deo, R.K.; Jain, M.K.; Kumar, Gautam; Lad, Mahendra; Badapanda, M.K.; Bagre, Sunil; Upadhyay, Rinki; Tripathi, Akhilesh; Rao, J.N.; Pandiyar, Mohan; Hannurkar, P.R.

    2013-01-01

    Due to non-availability of replacement Klystron tube in Indus-2, an IOT based high power RF amplifier system is realized. It is based on E2V make 80 kW IOTD2130 tube with its circuit assembly IMD2000ST. This amplifier system is easily available commercially due to its application in DTV broadcast. It has inherent advantages over klystron amplifier viz. high efficiency (η), less phase and amplitude sensitivity to HV ripple, higher linearity, compactness and less cooling requirement. This high power IOT amplifier is tested with its required control system, cooling system, electron gun auxiliary supplies, beam supply and focusing supply. The nominal beam voltage for this IOT is -36 kV however amplifier was tested successfully with indigenously developed -32 kV, crowbar less power supply. The optimum load impedance for IOT beam was calculated for this bias voltage ( 32kV). For the required load impedance, coupling coefficient (β) of output coupler to the O/P cavity was estimated and accordingly loop angle was adjusted. The amplifier has been tested up to 50 kW with amplifier efficiency 60% and gain 23 dB at - 32 kV beam voltage. (author)

  8. Compressed sensing based joint-compensation of power amplifier's distortions in OFDMA cognitive radio systems

    KAUST Repository

    Ali, Anum Z.

    2013-12-01

    Linearization of user equipment power amplifiers driven by orthogonal frequency division multiplexing signals is addressed in this paper. Particular attention is paid to the power efficient operation of an orthogonal frequency division multiple access cognitive radio system and realization of such a system using compressed sensing. Specifically, precompensated overdriven amplifiers are employed at the mobile terminal. Over-driven amplifiers result in in-band distortions and out of band interference. Out of band interference mostly occupies the spectrum of inactive users, whereas the in-band distortions are mitigated using compressed sensing at the receiver. It is also shown that the performance of the proposed scheme can be further enhanced using multiple measurements of the distortion signal in single-input multi-output systems. Numerical results verify the ability of the proposed setup to improve error vector magnitude, bit error rate, outage capacity and mean squared error. © 2011 IEEE.

  9. Compressed sensing based joint-compensation of power amplifier's distortions in OFDMA cognitive radio systems

    KAUST Repository

    Ali, Anum Z.; Hammi, Oualid; Al-Naffouri, Tareq Y.

    2013-01-01

    Linearization of user equipment power amplifiers driven by orthogonal frequency division multiplexing signals is addressed in this paper. Particular attention is paid to the power efficient operation of an orthogonal frequency division multiple access cognitive radio system and realization of such a system using compressed sensing. Specifically, precompensated overdriven amplifiers are employed at the mobile terminal. Over-driven amplifiers result in in-band distortions and out of band interference. Out of band interference mostly occupies the spectrum of inactive users, whereas the in-band distortions are mitigated using compressed sensing at the receiver. It is also shown that the performance of the proposed scheme can be further enhanced using multiple measurements of the distortion signal in single-input multi-output systems. Numerical results verify the ability of the proposed setup to improve error vector magnitude, bit error rate, outage capacity and mean squared error. © 2011 IEEE.

  10. High-current relativistic klystron amplifier development for microsecond pulse lengths

    International Nuclear Information System (INIS)

    Fazio, M.V.; Carlsten, B.E.; Faehl, R.J.; Kwan, T.J.; Rickel, D.G.; Stringfield, R.M.; Tallerico, P.J.

    1991-01-01

    Los Alamos is extending the performance of the Friedman-type, high-current relativistic klystron amplifier (RKA) to the microsecond regime while attempting to achieve the gigawatt-level peak power capability that has been characteristic of the RKA at shorter pulse lengths. Currently the electron beam power into the device is about 1 GW in microsecond duration pulses, with an effort underway to increase the beam power to 2.5 GW. To date the device has yielded an rf modulated electron beam power of 350 MW, with up to 50 MW coupled into waveguide. Several aspects of RKA operation under investigation that affect RKA beam bunching efficiency and amplifier gain include cavity tuning, beam diameter, beam current, and input rf drive power, and the development of an output coupler that efficiently couples the microwave power from the low impedance beam into rectangular waveguide operating in the dominant mode. Current results from experimental testing and code modelling are presented. 5 refs., 5 figs

  11. An integrated continuous class-F-1 mode power amplifier design approach for microwave enhanced portable diagnostic applications

    OpenAIRE

    Imtiaz, Azeem; Lees, Jonathan; Choi, Heungjae; Joshi, Lovleen Tina

    2015-01-01

    © 2015 IEEE. This paper presents a novel technique for designing a microwave power delivery system targeted at compact and portable microwave-assisted diagnostic healthcare applications to help tackle the growing problem of anti-microbial resistance. The arrangement comprises a purpose-built cylindrical cavity resonator within which, the bacterial samples are exposed, driven by a high-efficiency 10-W GaN amplifier, critically coupled via a simple, adjustable internal loop antenna. The experim...

  12. Double optimization of Xe(L) amplifier power scaling at λ ∼ 2.9 A

    International Nuclear Information System (INIS)

    Borisov, Alex B; Song, Xiangyang; Zhang Ping; McCorkindale, John C; Khan, Shahab F; Poopalasingam, Sankar; Zhao Ji; Dai Yang; Rhodes, Charles K

    2007-01-01

    The spectral and spatial characteristics of the Xe(L) amplifier at λ ∼ 2.9 A determine an optimum for the scaling of the peak power with channel length. The Xe 31+ and Xe 32+ (3d → 2p) transition arrays represent two identical spectral optima for amplification, a property stemming from the extremum of spectral components (3245) characteristic of their electron configurations. Adroit matching of the spatial distribution of the intensity characteristic of the propagating 248 nm pulse dynamically generating the self-trapped plasma channel with the intensity required to excite selectively and efficiently the Xe 31+ and Xe 32+ arrays can also simultaneously maximize the spatial volume of the excitation. The net outcome of this double maximization is an amplifying channel for the optimal transitions that possesses high gain (∼100 cm -1 ), low losses ( -1 cm -1 ) and a diameter of 15-20 μm, a size sufficient to produce an x-ray pulse energy of ∼50-100 mJ from a channel having an average xenon density of ∼10 20 cm -3 and a length of 1 cm. Since previous studies have experimentally demonstrated the ability to produce a saturated bandwidth of ∼60 eV, a magnitude sufficient to support a pulse duration of ∼30 as, peak powers P x >> 1 PW are clearly within the scaling limits of the Xe(L) system. The corresponding peak brightness scaling limit is accordingly bounded from below by P x /λ 2 ≅ 10 30 W cm -2 sr -1 . (fast track communication)

  13. Slow Light at High Frequencies in an Amplifying Semiconductor Waveguide

    DEFF Research Database (Denmark)

    Öhman, Filip; Yvind, Kresten; Mørk, Jesper

    2006-01-01

    We demonstrate slow-down of a modulated light signal in a semiconductor waveguide. Concatenated amplifying and absorbing sections simultaneously achieve both amplification and a controllable time delay at 15 GHz.......We demonstrate slow-down of a modulated light signal in a semiconductor waveguide. Concatenated amplifying and absorbing sections simultaneously achieve both amplification and a controllable time delay at 15 GHz....

  14. A power-efficient audio amplifier combining switching and linear techniques

    NARCIS (Netherlands)

    van der Zee, Ronan A.R.; van Tuijl, Adrianus Johannes Maria

    1999-01-01

    Integrated class-D audio amplifiers are very power efficient but require an external LC reconstruction filter, which prevents further integration. Also due to this filter, large feedback factors are hard to realize, so that the load influences the distortion and transfer characteristics. The 30 W

  15. Efficiency Enhancement of an Envelope Tracking Power Amplifier Combining Supply Shaping and Dynamic Biasing

    DEFF Research Database (Denmark)

    Tafuri, Felice Francesco; Sira, Daniel; Jensen, Ole Kiel

    2013-01-01

    This paper presents a new method to improve the performance of envelope tracking (ET) power amplifiers (PAs). The method consists of combining the supply modulation that characterizes the envelope tracking architecture with supply shaping and dynamic biasing. The inclusion of dynamic biasing allo...

  16. Design procedure for millimeter-wave InP DHBT stacked power amplifiers

    DEFF Research Database (Denmark)

    Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

    2015-01-01

    The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...

  17. High-Performance BiCMOS Transimpedance Amplifiers for Fiber-Optic Receivers

    Directory of Open Access Journals (Sweden)

    F. Touati

    2007-12-01

    Full Text Available High gain, wide bandwidth, low noise, and low-power transimpedance amplifiers based on new BiCMOS common- base topologies have been designed for fiber-optic receivers. In particular a design approach, hereafter called "A more- FET approach", added a new dimension to effectively optimize performance tradeoffs inherent in such circuits. Using conventional silicon 0.8 μm process parameters, simulated performance features of a total-FET transimpedance amplifier operating at 7.2 GHz, which is close to the technology fT of 12 GHz, are presented. The results are superior to those of similar recent designs and comparable to IC designs using GaAs technology. A detailed analysis of the design architecture, including a discussion on the effects of moving toward more FET-based designs is presented.

  18. An integral whole circuit of amplifying and discriminating suited to high counting rate

    International Nuclear Information System (INIS)

    Dong Chengfu; Su Hong; Wu Ming; Li Xiaogang; Peng Yu; Qian Yi; Liu Yicai; Xu Sijiu; Ma Xiaoli

    2007-01-01

    A hybrid circuit consists of charge sensitive preamplifier, main amplifier, discriminator and shaping circuit was described. This instrument has characteristics of low power consumption, small volume, high sensitivity, potable and so on, and is convenient for use in field. The output pulse of this instrument may directly consist with CMOS or TTL logic level. This instrument was mainly used for count measurement, for example, for high sensitive 3 He neutron detector, meanwhile also may used for other heavy ion detectors, the highest counting rate can reach 10 6 /s. (authors)

  19. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor.

    Science.gov (United States)

    Lee, Jieun; Jang, Jaeman; Choi, Bongsik; Yoon, Jinsu; Kim, Jee-Yeon; Choi, Yang-Kyu; Kim, Dong Myong; Kim, Dae Hwan; Choi, Sung-Jin

    2015-07-21

    This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors. The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential advantage of high density and low noise performance. The biosensor shows a current response of 5.74 decades per pH for pH detection, which is 2.5 × 10(5) times larger than that of a single SiNW sensor. In addition, we demonstrate charged polymer detection using the biosensor, with a high current change of 4.5 × 10(5) with a 500 nM concentration of poly(allylamine hydrochloride). In addition, we demonstrate a wide dynamic range can be obtained by adjusting the liquid gate voltage. We expect that this biosensor will be advantageous and practical for biosensor applications which requires lower noise, high speed, and high density.

  20. Approaches to building single-stage AC/AC conversion switch-mode audio power amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper discusses the possible topologies and promising approaches towards direct single-phase AC-AC conversion of the mains voltage for audio applications. When compared to standard Class-D switching audio power amplifiers with a separate power supply, it is expected that direct conversion will provide better efficiency and higher level of integration, leading to lower component count, volume and cost, but at the expense of a minor performance deterioration. (au)

  1. Extended Cann Model for Behavioral Modeling of Envelope Tracking Power Amplifiers

    DEFF Research Database (Denmark)

    Tafuri, Felice Francesco; Larsen, Torben

    2013-01-01

    This paper deals with behavioral modeling of power amplifiers (PAs) for envelope tracking (ET) applications. In such a scenario, the power supply modulation brings in several additional challenges for the system design and, similarly, it becomes more difficult to obtain an accurate and general PA...... by the ET operation. The model performance is tested modeling data-sets acquired from an ET test bench including a commercial RFMD PA and an envelope modulator designed using a commercial IC from TI....

  2. A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

    Directory of Open Access Journals (Sweden)

    Dong-Hwan Shin

    2017-10-01

    Full Text Available This study presents a 2–20 GHz monolithic distributed power amplifier (DPA using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a nonuniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC are 35.3–38.6 dBm and 11.4%–31%, respectively, for 2–20 GHz.

  3. A high gain wide dynamic range transimpedance amplifier for optical receivers

    International Nuclear Information System (INIS)

    Liu Lianxi; Zou Jiao; Liu Shubin; Niu Yue; Zhu Zhangming; Yang Yintang; En Yunfei

    2014-01-01

    As the front-end preamplifiers in optical receivers, transimpedance amplifiers (TIAs) are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range (DR) to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the −3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the −3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage. (semiconductor integrated circuits)

  4. A noise reconfigurable current-reuse resistive feedback amplifier with signal-dependent power consumption for fetal ECG monitoring

    NARCIS (Netherlands)

    Song, Shuang; Rooijakkers, M.J.; Harpe, P.; Rabotti, C.; Mischi, M.; Van Roermund, A.H.M.; Cantatore, E.

    2016-01-01

    This paper presents a noise-reconfigurable resistive feedback amplifier with current-reuse technique for fetal ECG monitoring. The proposed amplifier allows for both tuning of the noise level and changing the power consumption according to the signal properties, minimizing the total power

  5. Criterion of transverse coherence of self-amplified spontaneous emission in high gain free electron laser amplifiers

    International Nuclear Information System (INIS)

    Xie, M.; Kim, K.J.

    1995-01-01

    In a high gain free electron laser amplifier based on Self-Amplified Spontaneous Emission (SASE) the spontaneous radiation generated by an electron beam near the undulator entrance is amplified many orders of magnitude along the undulator. The transverse coherence properties of the amplified radiation depends on both the amplification process and the coherence of the seed radiation (the undulator radiation generated in the first gain length or so). The evolution of the transverse coherence in the amplification process is studied based on the solution of the coupled Maxwell-Vlasov equations including higher order transverse modes. The coherence of the seed radiation is determined by the number of coherent modes in the phase space area of the undulator radiation. We discuss the criterion of transverse coherence and identify governing parameters over a broad range of parameters. In particular we re-examine the well known emittance criterion for the undulator radiation, which states that full transverse coherence is guaranteed if the rms emittance is smaller than the wavelength divided by 4π. It is found that this criterion is modified for SASE because of the different optimization conditions required for the electron beam. Our analysis is a generalization of the previous study by Yu and Krinsky for the case of vanishing emittance with parallel electron beam. Understanding the transverse coherence of SASE is important for the X-ray free electron laser projects now under consideration at SLAC and DESY

  6. Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

    KAUST Repository

    Zafar, Ammar; Alouini, Mohamed-Slim; Chen, Yunfei; Radaydeh, Redha M.

    2012-01-01

    In this letter, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized

  7. Operation Amplifier

    NARCIS (Netherlands)

    Tetsuya, Saito; Nauta, Bram

    2011-01-01

    PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a

  8. Operation Amplifier

    NARCIS (Netherlands)

    Tetsuya, S.; Nauta, Bram

    2007-01-01

    PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. ; SOLUTION: The operation amplifier comprises: a

  9. Class 1 bluetooth power amplifier with 24dBm output power and 48% PAE at 2.4GHz in 0.25um CMOS

    NARCIS (Netherlands)

    Vathulay, V.; Sowlati, T.; Leenaerts, D.M.W.

    2001-01-01

    In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit,

  10. In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers.

    Science.gov (United States)

    Cochems, P; Kirk, A; Zimmermann, S

    2014-12-01

    Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design.

  11. Research on High Efficient Single-Phase Multi-Stage Interleaved Bridgeless PFC Frontend for Class-D Amplifiers

    DEFF Research Database (Denmark)

    Li, Qingnan; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2012-01-01

    In this paper, a 3.5kW single-phase high efficient interleaved Bridgeless PFC (IBPFC) is proposed for class-D amplifiers. This topology achieves a relatively higher efficiency in a wide output power range, which helps to reduce the energy consuming of the whole system. In addition, a detailed...

  12. High Efficiency PFC Frontend for Class-D Amplifiers

    DEFF Research Database (Denmark)

    Li, Qingnan; Frium, Mads P.

    2012-01-01

    This thesis investigates the design of high eciency Power Factor Correction (PFC) converter for Class-D amplier at universal line and 3.5kW power range. The work starts with an overview on dierent high eciency Bridgeless PFC topologies and investigates their applicability with respect to the given...... speci- cations in Chapter 1. Based on the conclusions of Chapter 2, the single-phase Two-Boost-Circuit Bridgeless PFC converter topology is considered the most promising to start with regarding the achievable converter eciency and the EMI performances.The subsequent Chapters discuss the method...

  13. Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

    International Nuclear Information System (INIS)

    Chen, Zukun

    2011-01-01

    A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode R , a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

  14. Mechanical Design and Fabrication of a New RF Power Amplifier for LANSCE

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zukun [Los Alamos National Laboratory

    2011-01-01

    A Full-scale prototype of a new 201.25 MHz RF Final Power Amplifier (FPA) for Los Alamos Neutron Science Center (LANSCE) has been designed, fabricated, assembled and installed in the test facility. This prototype was successfully tested and met the physics and electronics design criteria. The team faced design and manufacturing challenges, having a goal to produce 2 MW peak power at 13% duty factor, at the elevation of over 2 km in Los Alamos. The mechanical design of the final power amplifier was built around a Thales TH628 Diacrode{sup R}, a state-of-art tetrode power tube. The main structure includes Input circuit, Output circuit, Grid decoupling circuit, Output coupler, Tuning pistons, and a cooling system. Many types of material were utilized to make this new RF amplifier. The fabrication processes of the key components were completed in the Prototype Fabrication Division shop at Los Alamos National Laboratory. The critical plating procedures were achieved by private industry. The FPA mass is nearly 600 kg and installed in a beam structural support stand. In this paper, we summarize the FPA design basis and fabrication, plating, and assembly process steps with necessary lifting and handling fixtures. In addition, to ensure the quality of the FPA support structure a finite element analysis with seismic design forces has also been carried out.

  15. Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom K.

    2012-01-01

    In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

  16. A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

    NARCIS (Netherlands)

    Pelk, M.J.; Neo, W.C.E.; Gajadharsing, J.R.; Pengelly, R.S.; De Vreede, L.C.N.

    2008-01-01

    A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented. Simple, but accurate design equations for the output power combiner of the amplifier are introduced. Mixed-signal techniques are utilized for uncompromised control of the amplifier stages to optimize efficiency, as

  17. Cladding-pumped 70-kW-peak-power 2-ns-pulse Er-doped fiber amplifier

    Science.gov (United States)

    Khudyakov, M. M.; Bubnov, M. M.; Senatorov, A. K.; Lipatov, D. S.; Guryanov, A. N.; Rybaltovsky, A. A.; Butov, O. V.; Kotov, L. V.; Likhachev, M. E.

    2018-02-01

    An all-fiber pulsed erbium laser with pulse width of 2.4 ns working in a MOPA configuration has been created. Cladding pumped double clad erbium doped large mode area fiber was used in the final stage amplifier. Peculiarity of the current work is utilization of custom-made multimode diode wavelength stabilized at 981+/-0.5 nm - wavelength of maximum absorption by Er ions. It allowed us to shorten Er-doped fiber down to 1.7 m and keep a reasonably high pump-to signal conversion efficiency of 8.4%. The record output peak power for all-fiber amplifiers of 84 kW was achieved within 1555.9+/-0.15 nm spectral range.

  18. 500 MW peak power degenerated optical parametric amplifier delivering 52 fs pulses at 97 kHz repetition rate.

    Science.gov (United States)

    Rothhardt, J; Hädrich, S; Röser, F; Limpert, J; Tünnermann, A

    2008-06-09

    We present a high peak power degenerated parametric amplifier operating at 1030 nm and 97 kHz repetition rate. Pulses of a state-of-the art fiber chirped-pulse amplification (FCPA) system with 840 fs pulse duration and 410 microJ pulse energy are used as pump and seed source for a two stage optical parametric amplifier. Additional spectral broadening of the seed signal in a photonic crystal fiber creates enough bandwidth for ultrashort pulse generation. Subsequent amplification of the broadband seed signal in two 1 mm BBO crystals results in 41 microJ output pulse energy. Compression in a SF 11 prism compressor yields 37 microJ pulses as short as 52 fs. Thus, pulse shortening of more than one order of magnitude is achieved. Further scaling in terms of average power and pulse energy seems possible and will be discussed, since both concepts involved, the fiber laser and the parametric amplifier have the reputation to be immune against thermo-optical effects.

  19. Development of a high power femtosecond laser

    CSIR Research Space (South Africa)

    Neethling, PH

    2010-10-01

    Full Text Available The Laser Research Institute and the CSIR National Laser Centre are developing a high power femtosecond laser system in a joint project with a phased approach. The laser system consists of an fs oscillator and a regenerative amplifier. An OPCPA...

  20. Double-pass tapered amplifier diode laser with an output power of 1 W for an injection power of only 200 μW.

    Science.gov (United States)

    Bolpasi, V; von Klitzing, W

    2010-11-01

    A 1 W tapered amplifier requiring only 200 μW of injection power at 780 nm is presented in this paper. This is achieved by injecting the seeding light into the amplifier from its tapered side and feeding the amplified light back into the small side. The amplified spontaneous emission of the tapered amplifier is suppressed by 75 dB. The double-passed tapered laser, presented here, is extremely stable and reliable. The output beam remains well coupled to the optical fiber for a timescale of months, whereas the injection of the seed light did not require realignment for over a year of daily operation.

  1. Efficient power allocation for fixed-gain amplify-and-forward relaying in rayleigh fading

    KAUST Repository

    Zafar, Ammar

    2013-06-01

    In this paper, we study power allocation strategies for a fixed-gain amplify-and-forward relay network employing multiple relays. We consider two optimization problems for the relay network: 1) optimal power allocation to maximize the end-to-end signal-to-noise ratio (SNR) and 2) minimizing the total consumed power while maintaining the end-to-end SNR over a threshold value. We assume that the relays have knowledge of only the channel statistics of all the links. We show that the SNR maximization problem is concave and the power minimization problem is convex. Hence, we solve the problems through convex programming. Numerical results show the benefit of allocating power optimally rather than uniformly. © 2013 IEEE.

  2. Spectral Analysis of Polynomial Nonlinearity with Applications to RF Power Amplifiers

    Directory of Open Access Journals (Sweden)

    G. Tong Zhou

    2004-09-01

    Full Text Available The majority of the nonlinearity in a communication system is attributed to the power amplifier (PA present at the final stage of the transmitter chain. In this paper, we consider Gaussian distributed input signals (such as OFDM, and PAs that can be modeled by memoryless or memory polynomials. We derive closed-form expressions of the PA output power spectral density, for an arbitrary nonlinear order, based on the so-called Leonov-Shiryaev formula. We then apply these results to answer practical questions such as the contribution of AM/PM conversion to spectral regrowth and the relationship between memory effects and spectral asymmetry.

  3. Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

    DEFF Research Database (Denmark)

    Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves

    2013-01-01

    This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and ...... configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477...

  4. High-gain Seeded FEL Amplifier Tunable in the Terahertz Range

    CERN Document Server

    Sung, C; Pellegrini, C; Ralph, J E; Reiche, S; Rosenzweig, J B; Tochitsky, Sergei Ya

    2005-01-01

    The lack of a high-power, relatively low-cost and compact terahertz (THz) source in the range 0.3-3x10(12) Hz is the major obstacle in progressing on biomedical and material studies at these wavelengths. A high-gain, single pass seeded FEL technique allows to obtain high power THz pulses of a high spectral brightness. We describe an ongoing project at the Neptune laboratory where a ~ 1kW seed pulse generated by difference frequency mixing of CO2 laser lines in a GaAs nonlinear crystal is injected into a waveguide FEL amplifier. The FEL is driven by a 5 ps (r.m.s) long electron pulse with a peak current up to 100A provided by a regular S-band photoinjector. According to 3-D, time dependent simulations, up to ~ 10 MW THz power can be generated using a 2 meter long planar undulator. By mixing different pairs of CO2 laser lines and matching resonant energy of the electron beam, tunability in the 100-400 mm range is expected. A tunable Fabri-Perot interferometer will be used to select a high-power 5ps THz pulse. T...

  5. X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit

    Directory of Open Access Journals (Sweden)

    Kyung-Tae Bae

    2017-11-01

    Full Text Available This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a higher power density per area and a higher power-added efficiency (PAE using a 0.25 μm GaN HEMT process of WIN semiconductors, Inc. The optimum load impedances at the fundamental and third harmonic frequencies are extracted from load-pull simulations at the transistor’s extrinsic plane, including the drain-source capacitance and the series drain inductance. The third harmonic-tuned circuit is effectively integrated with the output matching circuit at the fundamental frequency, without complicating the whole output matching circuit. The input matching circuit uses a lossy matching scheme, which allows a good return loss and a simple LC low-pass circuit configuration. The fabricated power amplifier monolithic microwave integrated circuit (MMIC occupies an area of 13.26 mm2, and shows a linear gain of 20 dB or more, a saturated output power of 43.2~44.7 dBm, and a PAE of 35~37% at 8.5 to 10.5 GHz.

  6. High-power continuous-wave mid-infrared radiation generated by difference frequency mixing of diode-laser-seeded fiber amplifiers and its application to dual-beam spectroscopy

    Science.gov (United States)

    Lancaster, D. G.; Richter, D.; Curl, R. F.; Tittel, F. K.; Goldberg, L.; Koplow, J.

    1999-01-01

    We report the generation of up to 0.7 mW of narrow-linewidth (radiation at 3.3 micrometers by difference frequency mixing of a Nd:YAG-seeded 1.6-W Yb fiber amplifier and a 1.5-micrometers diode-laser-seeded 0.6-W Er/Yb fiber amplifier in periodically poled LiNbO3. A conversion efficiency of 0.09%/W (0.47 mWW-2 cm-1) was achieved. A room-air CH4 spectrum acquired with a compact 80-m multipass cell and a dual-beam spectroscopic configuration indicates an absorption sensitivity of +/-2.8 x 10(-5) (+/-1 sigma), corresponding to a sub-parts-in-10(9) (ppb) CH4 sensitivity (0.8 ppb).

  7. Design of a power amplifier for wireless communications using microstrip technology and Microwave Office

    Directory of Open Access Journals (Sweden)

    Christian Tipantuña

    2015-12-01

    Full Text Available This paper provides a detailed description and all the procedures involved in designing a power amplifier using microstrip technology and the design software Microwave OfficeTM. Specifically, the design is oriented to build an amplifier with central frequency at 14 GHz, but the same fundamentals and principles could be applied in the whole range of radio frequency. For the design, a MESFET transistor and simultaneous input and output matching networks are considered. The values of the parameters and the simulation for every stage are computed and performed using AWR Microwave OfficeTM. At the end of the document, a fully functional circuit layout represented in 2D and 3D is shown with all their complementary elements

  8. High Average Power, High Energy Short Pulse Fiber Laser System

    Energy Technology Data Exchange (ETDEWEB)

    Messerly, M J

    2007-11-13

    Recently continuous wave fiber laser systems with output powers in excess of 500W with good beam quality have been demonstrated [1]. High energy, ultrafast, chirped pulsed fiber laser systems have achieved record output energies of 1mJ [2]. However, these high-energy systems have not been scaled beyond a few watts of average output power. Fiber laser systems are attractive for many applications because they offer the promise of high efficiency, compact, robust systems that are turn key. Applications such as cutting, drilling and materials processing, front end systems for high energy pulsed lasers (such as petawatts) and laser based sources of high spatial coherence, high flux x-rays all require high energy short pulses and two of the three of these applications also require high average power. The challenge in creating a high energy chirped pulse fiber laser system is to find a way to scale the output energy while avoiding nonlinear effects and maintaining good beam quality in the amplifier fiber. To this end, our 3-year LDRD program sought to demonstrate a high energy, high average power fiber laser system. This work included exploring designs of large mode area optical fiber amplifiers for high energy systems as well as understanding the issues associated chirped pulse amplification in optical fiber amplifier systems.

  9. An implantable integrated low-power amplifier-microelectrode array for Brain-Machine Interfaces.

    Science.gov (United States)

    Patrick, Erin; Sankar, Viswanath; Rowe, William; Sanchez, Justin C; Nishida, Toshikazu

    2010-01-01

    One of the important challenges in designing Brain-Machine Interfaces (BMI) is to build implantable systems that have the ability to reliably process the activity of large ensembles of cortical neurons. In this paper, we report the design, fabrication, and testing of a polyimide-based microelectrode array integrated with a low-power amplifier as part of the Florida Wireless Integrated Recording Electrode (FWIRE) project at the University of Florida developing a fully implantable neural recording system for BMI applications. The electrode array was fabricated using planar micromachining MEMS processes and hybrid packaged with the amplifier die using a flip-chip bonding technique. The system was tested both on bench and in-vivo. Acute and chronic neural recordings were obtained from a rodent for a period of 42 days. The electrode-amplifier performance was analyzed over the chronic recording period with the observation of a noise floor of 4.5 microVrms, and an average signal-to-noise ratio of 3.8.

  10. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor

    Science.gov (United States)

    2015-07-21

    Hybrid Biosensor Jieun Lee1,2, Jaeman Jang1, Bongsik Choi1, Jinsu Yoon1, Jee-Yeon Kim3, Yang-Kyu Choi3, Dong Myong Kim1, Dae Hwan Kim1 & Sung-Jin Choi1...This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response...of field-effect-transistor (FET)-based biosensors . The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential

  11. Robust Power Allocation for Multi-Carrier Amplify-and-Forward Relaying Systems

    KAUST Repository

    Rao, Anlei

    2012-09-08

    It has been shown that adaptive power allocation can provide a substantial performance gain in wireless communication systems when perfect channel state information (CSI) is available at the transmitter. However when only imperfect CSI is available, the performance may degrade significantly, and as such robust power allocation schemes have been developed to minimize the effects of this degradation. In this paper, we investigate power allocation strategies for multicarrier systems, in which each subcarrier employs single amplify-and-forward (AF) relaying scheme. Optimal power allocation schemes are proposed by maximizing the approximated channel capacity under aggregate power constraint (APC) and separate power constraint (SPC). By comparison with the uniform power allocation scheme and the best channel power allocation scheme, we confirm that both the APC and SPC schemes achieve a performance gain over benchmark schemes. In addition, the impact of channel uncertainty is also considered in this paper by modeling the uncertainty regions as bounded sets, and results show that the uncertainty can degrade the worst-case performance significantly.

  12. Design of a high-gain laser diode-array pumped Nd:YAG Alternating Precessive Slab Amplifier (APS-Amplifier)

    Science.gov (United States)

    Coyle, D. Barry

    1991-01-01

    In the design of space qualifiable laser systems for ranging and altimetry, such as NASA's Geodynamic Laser Ranging System (GLRS), the transmitter must be kept small, powerful yet efficient, and must consist of as few components as possible. A novel preamplifier design is examined which requires no external beam steering optics, yielding a compact component with simple alignment procedures. The gains achieved are comparable to multipass zigzag amplifiers using two or more sets of external optics for extra passes through the amplifying medium.

  13. Transmission of wireless neural signals through a 0.18 µm CMOS low-power amplifier.

    Science.gov (United States)

    Gazziro, M; Braga, C F R; Moreira, D A; Carvalho, A C P L F; Rodrigues, J F; Navarro, J S; Ardila, J C M; Mioni, D P; Pessatti, M; Fabbro, P; Freewin, C; Saddow, S E

    2015-01-01

    In the field of Brain Machine Interfaces (BMI) researchers still are not able to produce clinically viable solutions that meet the requirements of long-term operation without the use of wires or batteries. Another problem is neural compatibility with the electrode probes. One of the possible ways of approaching these problems is the use of semiconductor biocompatible materials (silicon carbide) combined with an integrated circuit designed to operate with low power consumption. This paper describes a low-power neural signal amplifier chip, named Cortex, fabricated using 0.18 μm CMOS process technology with all electronics integrated in an area of 0.40 mm(2). The chip has 4 channels, total power consumption of only 144 μW, and is impedance matched to silicon carbide biocompatible electrodes.

  14. A low-power wide range transimpedance amplifier for biochemical sensing.

    Science.gov (United States)

    Rodriguez-Villegas, Esther

    2007-01-01

    This paper presents a novel low voltage and low power transimpedance amplifier for amperometric potentiostats. The power is optimized by having three different gain settings for different current ranges, which can be programmed with a biasing current. The voltage ranges have been optimized by using FGMOS transistors in a second voltage amplification stage that simultaneously allow for offset calibration as well as independent biasing of the gates. The circuit operates with input currents from 1 pA to 1 microA, with a maximum power supply voltage of 1.5 V and consumes 82.5 nW, 9.825 microW, 47.325 microW for currents varying from (1 pA, 0.25 nA), (0.25 nA, 62.5 nA) and (62.5 nA, 1 microA) respectively.

  15. Simultaneous Wireless Information and Power Transfer for MIMO Amplify-and-Forward Relay Systems

    KAUST Repository

    Benkhelifa, Fatma; Alouini, Mohamed-Slim

    2016-01-01

    In this paper, we investigate the simultaneous wireless information and power transfer (SWIPT) for the two-hop Multiple-Input Multiple-Output (MIMO) Amplify-and-Forward (AF) relay communication systems with the multiantenna energy harvesting relay. We derive the optimal source and relay covariance matrices to characterize the achievable region between the sourcedestination rate and the harvested energy at the relay, namely Rate-Energy (R-E) region. In this context, we consider the ideal scenario where the energy harvester (EH) receiver and the information decoder (ID) receiver at the relay can simultaneously decode the information and harvest the energy at the relay. Then, we consider more practical schemes which are the power splitting (PS) and the time switching (TS) which separate the EH and ID transfer over the power domain and the time domain, respectively.

  16. Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

    International Nuclear Information System (INIS)

    Qin, Guoxuan; Jiang, Ningyue; Seo, Jung-Hun; Cho, Namki; Van der Weide, Daniel; Ma, Zhenqiang; Ponchak, George E; Ma, Pingxi; Stetson, Scott; Racanelli, Marco

    2010-01-01

    The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔE g /kT) and minimized thermal effects, with little influence on the passive components of the circuits

  17. Simultaneous Wireless Information and Power Transfer for MIMO Amplify-and-Forward Relay Systems

    KAUST Repository

    Benkhelifa, Fatma

    2016-01-06

    In this paper, we investigate the simultaneous wireless information and power transfer (SWIPT) for the two-hop Multiple-Input Multiple-Output (MIMO) Amplify-and-Forward (AF) relay communication systems with the multiantenna energy harvesting relay. We derive the optimal source and relay covariance matrices to characterize the achievable region between the sourcedestination rate and the harvested energy at the relay, namely Rate-Energy (R-E) region. In this context, we consider the ideal scenario where the energy harvester (EH) receiver and the information decoder (ID) receiver at the relay can simultaneously decode the information and harvest the energy at the relay. Then, we consider more practical schemes which are the power splitting (PS) and the time switching (TS) which separate the EH and ID transfer over the power domain and the time domain, respectively.

  18. A High-Voltage Class D Audio Amplifier for Dielectric Elastomer Transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Dielectric Elastomer (DE) transducers have emerged as a very interesting alternative to the traditional electrodynamic transducer. Lightweight, small size and high maneuverability are some of the key features of the DE transducer. An amplifier for the DE transducer suitable for audio applications...... is proposed and analyzed. The amplifier addresses the issue of a high impedance load, ensuring a linear response over the midrange region of the audio bandwidth (100 Hz – 3.5 kHz). THD+N below 0.1% are reported for the ± 300 V prototype amplifier producing a maximum of 125 Var at a peak efficiency of 95 %....

  19. Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

    2008-01-01

    Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

  20. 47 CFR 97.315 - Certification of external RF power amplifiers.

    Science.gov (United States)

    2010-10-01

    .... (2) The amplifier was manufactured before April 28, 1978, and has been issued a marketing waiver by... that operator's station. (3) The amplifier is sold to an amateur radio operator or to a dealer, the amplifier is purchased in used condition by a dealer, or the amplifier is sold to an amateur radio operator...

  1. Advanced design and characterization methodologies for memory-aware CMOS power-amplifier implementation

    Directory of Open Access Journals (Sweden)

    M. Schleyer

    2017-09-01

    Full Text Available This paper reports on an effective root-cause analysis method of memory effects in power amplifiers, as well as introduces compensation techniques on a circuit design level. Despite conventional memory-effect approaches, the discussed method uses a two-tone scan over a wide operation and modulation range. This enables an in-depth study of physical causes and helps to implement compensation techniques at design stage. On the one hand, this circuit investigation is optimized using an automated SystemC model parametrized with real device and measurement values. Hence, computation time is widely reduced which shortens design cycles. On the other hand, the implementation of the derived circuit compensation means will reduce the complexity of digital pre-distortion due to a reduced memory-effect induced AM/AM and AM/PM hysteresis. The approach is demonstrated on a 65 nm CMOS power amplifier with an OIP1 of 27 dBm and a PAE of over 30 % using WCDMA and LTE signals. In fact, mismatch could be reduced by more than 8 %.

  2. Analysis of Lifetime Data for the Linac 201 MHz Power Amplifiers

    International Nuclear Information System (INIS)

    McCrory, Elliot; Webber, Robert C.

    2002-01-01

    This document analyzes data on the lifetime of the 201-MHz triode power amplifier (PA) vacuum tube, model number 7835, used in the low-energy half of the Linac. We observe that a 7835 power amplifier vacuum tube has historically provided about one and one-third years service in the Linac. The lifetime of recently re-manufactured tubes is somewhat less, but it is not clear if this is because the manufacturer is ''loosing their touch,'' or because tubes cannot be effectively rebuilt after a certain number of times. Taking into account the expected tube lifetimes, the statistical fluctuations on this number, and the amount of time it takes for the manufacturer to make good tubes, we require about 14 tubes either operating, ready as good spares or being manufactured, in order to have sufficient spares to run the Linac. As a hedge against supplier drop out, we need to increase our inventory of good spare tubes by about three tubes per year for the next few years

  3. A novel low-voltage operational amplifier for low-power pipelined ADCs

    International Nuclear Information System (INIS)

    Fan Mingjun; Ren Junyan; Guo Yao; Li Ning; Ye Fan; Li Lian

    2009-01-01

    A novel low-voltage two-stage operational amplifier employing class-AB architecture is presented. The structure utilizes level-shifters and current mirrors to create the class-AB behavior in the first and second stages. With this structure, the transconductances of the two stages are double compared with the normal configuration without class-AB behaviors with the same current consumption. Thus power can be saved and the operation frequency can be increased. The nested cascode miller compensation and symmetric common-mode feedback circuits are used for large unit-gain bandwidth, good phase margin and stability. Simulation results show that the sample-and-hold of the 12-bit 40-Ms/s pipelined ADC using the proposed amplifier consumes only 5.8 mW from 1.2 V power supply with signal-to-noise-and-distortion ratio 89.5 dB, spurious-free dynamic range 95.7 dB and total harmonic distortion -94.3 dB with Nyquist input signal frequency.

  4. Design of resonant converter based DC power supply for RF amplifier

    International Nuclear Information System (INIS)

    Mohan, Kartik; Suthar, Gajendra; Dalicha, Hrushikesh; Agarwal, Rohit; Trivedi, R.G.; Mukherjee, Aparajita

    2017-01-01

    ITER require 20 MW of RF power to a large variety of plasmas in the Ion Cyclotron frequency range for heating and driving plasma current. Nine RF sources of 2.5MW RF power level each collectively will accomplish the above requirement. Each RF source consists of SSPA, driver and end stage, above which driver and end stage amplifier are tube (Tetrode/Diacrode) based which requires auxiliary DC power source viz. filament, screen grid and control grid DC power supply. DC power supply has some stringent requirements like low stored energy, fast turn off, and low ripple value, etc. This paper will focus only on Zero Current Switching (ZCS) resonant converter based buck converter. This can serve the purpose of control grid and screen grid DC power supply for above requirement. IGBT switch will be used at 20 kHz so as to lower the filter requirement hence low stored energy and ripple in the output voltage. ZCS operation will also assist us in reducing EMI/EMC effect. Design of resonant tank circuit is important aspect of the converter as it forms the backbone of the complete system and basis of selection of other important parameters as well hence mathematical model analysis with the help of circuit equations for various modes have been shown as a part of selection criteria. Peak current through the switch, duty cycle, switching frequency will be the design parameters for selecting resonant tank circuit

  5. A High Power Linear Solid State Pulser

    International Nuclear Information System (INIS)

    Boris Yen; Brent Davis; Rex Booth

    1999-01-01

    Particle Accelerators require high voltage and often high power. Typically the high voltage/power generation utilizes a topology with an extra energy store and a switching means to extract that stored energy. The switches may be active or passive devices. Active switches are hard or soft vacuum tubes, or semiconductors. When required voltages exceed tens of kilovolts, numerous semiconductors are stacked to withstand that potential. Such topologies can use large numbers of critical parts that, when in series, compromise the system reliability and performance. This paper describes a modular, linear, solid state amplifier which uses a parallel array of semiconductors, coupled with transmission line transformers. Such a design can provide output signals with voltages exceeding 10kV (into 50-ohms), and with rise and fall times (10-90 % amplitude) that are less than 1--ns. This compact solid state amplifier is modular, and has both hot-swap and soft fail capabilities

  6. An Integrated Low-Power Lock-In Amplifier and Its Application to Gas Detection

    Directory of Open Access Journals (Sweden)

    Paulina M. Maya-Hernández

    2014-08-01

    Full Text Available This paper presents a new micropower analog lock-in amplifier (LIA suitable for battery-operated applications thanks to its reduced size and power consumption as well as its operation with single-supply voltage. The proposed LIA was designed in a 0.18 µm CMOS process with a single supply voltage of 1.8 V. Experimental results show a variable DC gain ranging from 24.7 to 42 dB, power consumption of 417 µW and integration area of 0.013 mm2. The LIA performance was demonstrated by measuring carbon monoxide concentrations as low as 1 ppm in dry N2. The experimental results show that the response to CO of the sensing system can be considerably improved by means of the proposed LIA.

  7. On-chip power-combining techniques for watt-level linear power amplifiers in 0.18 μm CMOS

    International Nuclear Information System (INIS)

    Ren Zhixiong; Zhang Kefeng; Liu Lanqi; Li Cong; Chen Xiaofei; Liu Dongsheng; Liu Zhenglin; Zou Xuecheng

    2015-01-01

    Three linear CMOS power amplifiers (PAs) with high output power (more than watt-level output power) for high data-rate mobile applications are introduced. To realize watt-level output power, there are two 2.4 GHz PAs using an on-chip parallel combining transformer (PCT) and one 1.95 GHz PA using an on-chip series combining transformer (SCT) to combine output signals of multiple power stages. Furthermore, some linearization techniques including adaptive bias, diode linearizer, multi-gated transistors (MGTR) and the second harmonic control are applied in these PAs. Using the proposed power combiner, these three PAs are designed and fabricated in TSMC 0.18 μm RFCMOS process. According to the measurement results, the proposed two linear 2.4 GHz PAs achieve a gain of 33.2 dB and 34.3 dB, a maximum output power of 30.7 dBm and 29.4 dBm, with 29% and 31.3% of peak PAE, respectively. According to the simulation results, the presented linear 1.95 GHz PA achieves a gain of 37.5 dB, a maximum output power of 34.3 dBm with 36.3% of peak PAE. (paper)

  8. A Low-Power CMOS Trans-Impedance Amplifier for 2.5 Gb/S Optical Communication Systems

    Directory of Open Access Journals (Sweden)

    Mojgan Mohseni

    2013-01-01

    Full Text Available This Paper presents a new Trans-impedance amplifier for optical receiver circuits. The amplifier is based on parallel (R-C feedback topology which is optimized for power consumption and uses shunt-peaking technique to enhance the frequency bandwidth of the amplifier. However, the circuit is designed and simulated using 0.18µm CMOS technology parameters. As simulation results show, the amplifier has a gain of 67.5dBΩ, bandwidth of 3GHz while consumes only 12.16 mW power which shows a very good performance for using in a 2.5Gb/S (SONET OC-48 optical communication system. Finally, as the simulated Eye-Diagram shows, the circuit has a very good performance for a 2.5Gb/S system for a 10µA input current.

  9. Multi-Channel Amplifier-Discriminator for Highly Time-Resolved Detection

    CERN Document Server

    Despeisse, M; Lapington, J; Jarron, P

    2011-01-01

    A low-power multi-channel amplifier-discriminator was developed for application in highly time-resolved detection systems. The proposed circuit architecture, so-called Nino, is based on a time-over-threshold approach and shows a high potential for time-resolved readout of solid-state photo-detectors and of detectors based on vacuum technologies. The Irpics circuit was designed in a 250 nm CMOS technology, implementing 32 channels of a Nino version optimized to achieve high-time resolution on the output low-voltage differential signals (LVDS) while keeping a low power consumption of 10 mW per channel. Electrical characterizations of the circuit demonstrate a very low intrinsic time jitter on the output pulse leading edge, measured below 10 ps rms for each channel for high input signal charges (100 fC) and below 25 ps rms for low input signal charges (20-100 fC). The read-out architecture moreover permits to retrieve the input signal charge from the timing measurements, while a calibration procedure was develop...

  10. Gain measurement in a CW medium-power diode pumped Nd:YAG laser amplifier by ASE analysis

    International Nuclear Information System (INIS)

    Razzaghi, D; Hajiesmaeilbaigi, F; Ruzbehani, M

    2014-01-01

    Using the relation between amplified spontaneous emission intensity and gain, a set of formulas is derived for gain evaluation by comparing fluorescence yield in two different lengths of the active medium. Experimental measurements are carried out and gain is calculated by solving the derived formula. For comparison, measurements are also carried out using the probe beam method, which shows good agreement between the two methods in a typical CW medium-power diode pumped Nd:YAG amplifier. (paper)

  11. Simultaneous Wireless Information and Power Transfer for MIMO Amplify-and-Forward Relay Systems

    KAUST Repository

    Benkhelifa, Fatma

    2016-03-28

    © 2015 IEEE. In this paper, we investigate two-hop Multiple- Input Multiple-Output (MIMO) Amplify-and-Forward (AF) relay communication systems with simultaneous wireless information and power transfer (SWIPT) at the multi-antenna energy harvesting relay. We derive the optimal source and relay covariance matrices to characterize the achievable region between the source-destination rate and the harvested energy at the relay, namely Rate-Energy (R-E) region. In this context, we consider the ideal scenario where the energy harvester (EH) receiver and the information decoder (ID) receiver at the relay can simultaneously decode the information and harvest the energy at the relay. This scheme provides an outer bound for the achievable R-E region since practical energy harvesting circuits are not yet able to harvest the energy and decode the information simultaneously. Then, we consider more practical schemes which are the power splitting (PS) and the time switching (TS) proposed in [1] and which separate the EH and ID transfer over the power domain and the time domain, respectively. In our study, we derive the boundary of the achievable R- E region and we show the effect of the source transmit power, the relay transmit power and the position of the relay between the source and the destination on the achievable R-E region for the ideal scenario and the two practical schemes.

  12. Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements...... on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded...... class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported...

  13. W-band power amplifier MMIC with 400 mW output power in 0.1 μm AlGaN/GaN technology

    NARCIS (Netherlands)

    Heijningen,M. van; Rodenburg, M.; Vliet, F.E. van; Massler, M.; Tessmann, A.; Brückner, F.; Müller, S.; Schwantuschke, D.; Quay; Narhi, T.

    2012-01-01

    The 0.1 μm AlGaN/GaN technology and design of two W-band power amplifiers in this technology are described. The dual-stage amplifier reaches an output power of 400 mW at 90 GHz at an operation bias of 20 V. Two designs with different driver to final stage gate width ratio are discussed. More than 10

  14. CSTI High Capacity Power

    International Nuclear Information System (INIS)

    Winter, J.M.

    1989-01-01

    The SP-100 program was established in 1983 by DOD, DOE, and NASA as a joint program to develop the technology necessary for space nuclear power systems for military and civil application. During FY-86 and 87, the NASA SP-100 Advanced Technology Program was devised to maintain the momentum of promising technology advancement efforts started during Phase 1 of SP-100 and to strengthen, in key areas, the chances for successful development and growth capability of space nuclear reactor power systems for future space applications. In FY-88, the Advanced Technology Program was incorporated into NASA's new Civil Space Technology Initiative (CSTI). The CSTI Program was established to provide the foundation for technology development in automation and robotics, information, propulsion, and power. The CSTI High Capacity Power Program builds on the technology efforts of the SP-100 program, incorporates the previous NASA SP-100 Advanced Technology project, and provides a bridge to NASA Project Pathfinder. The elements of CSTI High Capacity Power development include Conversion Systems, Thermal Management, Power Management, System Diagnostics, and Environmental Interactions. Technology advancement in all areas, including materials, is required to assure the high reliability and 7 to 10 year lifetime demanded for future space nuclear power systems. The overall program will develop and demonstrate the technology base required to provide a wide range of modular power systems as well as allowing mission independence from solar and orbital attitude requirements. Several recent advancements in CSTI High Capacity power development will be discussed

  15. A megajoule class krypton fluoride amplifier for single shot, high gain ICF application

    International Nuclear Information System (INIS)

    Rose, E.; Hanson, D.; Krohn, B.; McLeod, J.; Kang, M.

    1988-01-01

    A design study is underway to define the optimal architecture for a KrF laser system which will deliver 10 MJ of 248-nm light to an ICF target. We present one approach which incorporates final power amplifiers in the megajoule class, achieving 10 MJ with four final amplifiers. Each double-pass laser amplifier employs two-sided electron-beam pumping of the laser gas medium. Details of the design are based on a Monte-Carlo electron-beam deposition code, a one-dimensional, time-dependent kinetics code, and pulsed power circuit modeling. Linear dimensions of the amplifier's extracted gain volume are 6.25 m in height and length and 5.12 m in width. Each amplifier handles 160 angularly multiplexed laser channels. The one-amagat, krypton-rich laser medium is e-beam pumped at 60-kW cm/sup /minus/3/ (4-MA at3.3-MV) over the 2-microsecond duration of the laser beam pulse train. 5 refs., 4 figs

  16. Design and Characterization of a 6 W GaN HEMT Microwave Power Amplifier with Digital Predistortion Linearization

    OpenAIRE

    Mitrevski, Dragan

    2011-01-01

    In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions through load pull simulations and measurements is investigated.The purpose is to find source and load impedances to achieve for instance maximum efficiency and maximum output power, and investigate whether thesimulated results can be replicated in a measurement setup. Simulations show that when matching for maximum output power, a peak output power of 13W is achieved, while in 1 dB compression, ...

  17. Megawatt dye laser oscillator-amplifier system for high resolution spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Drell, P; Chu, S

    1979-03-01

    Peak powers in excess of 4 MW in the visible and 1.3 MW in the uv with linewidths as narrow as 80 MHz are generated with three YAG pumped amplifier stages following a cw dye oscillator. The laser pulses are nearly Fourier transform limited in frequency space and diffraction limited in coordinate space.

  18. 94 GHz power amplifier MMIC development in state of the art MHEMT and AlGaN/GaN technology

    NARCIS (Netherlands)

    Heijningen, M. van; Bent, G. van der; Rodenburg, M.; Vliet, F.E. van; Quay, R.; Brückner, P.; Schwantuschke, D.; Jukkala, P.; Narhi, T.

    2012-01-01

    Solid-state power amplifiers at W-band (75 - 110 GHz) are attractive for the generation of local-oscillator (LO) power for super-heterodyne receivers operating at sub-millimetre wave frequencies, as needed for example in future space instruments for Earth observation. Apart from space applications

  19. Design of low power common-gate low noise amplifier for 2.4 GHz wireless sensor network applications

    International Nuclear Information System (INIS)

    Zhang Meng; Li Zhiqun

    2012-01-01

    This paper presents a differential low power low noise amplifier designed for the wireless sensor network (WSN) in a TSMC 0.18 μm RF CMOS process. A two-stage cross-coupling cascaded common-gate (CG) topology has been designed as the amplifier. The first stage is a capacitive cross-coupling topology. It can reduce the power and noise simultaneously. The second stage is a positive feedback cross-coupling topology, used to set up a negative resistance to enhance the equivalent Q factor of the inductor at the load to improve the gain of the LNA. A differential inductor has been designed as the load to achieve reasonable gain. This inductor has been simulated by the means of momentum electromagnetic simulation in ADS. A 'π' circuit model has been built as the inductor model by iteration in ADS. The inductor has been fabricated separately to verify the model. The LNA has been fabricated and measured. The LNA works well centered at 2.44 GHz. The measured gain S 21 is variable with high gain at 16.8 dB and low gain at 1 dB. The NF (noise figure) at high gain mode is 3.6 dB, the input referenced 1 dB compression point (IP1dB) is about −8 dBm and the IIP3 is 2 dBm at low gain mode. The LNA consumes about 1.2 mA current from 1.8 V power supply.

  20. Designing an Inverter-based Operational Transconductance Amplifier-capacitor Filter with Low Power Consumption for Biomedical Applications.

    Science.gov (United States)

    Yousefinezhad, Sajad; Kermani, Saeed; Hosseinnia, Saeed

    2018-01-01

    The operational transconductance amplifier-capacitor (OTA-C) filter is one of the best structures for implementing continuous-time filters. It is particularly important to design a universal OTA-C filter capable of generating the desired filter response via a single structure, thus reducing the filter circuit power consumption as well as noise and the occupied space on the electronic chip. In this study, an inverter-based universal OTA-C filter with very low power consumption and acceptable noise was designed with applications in bioelectric and biomedical equipment for recording biomedical signals. The very low power consumption of the proposed filter was achieved through introducing bias in subthreshold MOSFET transistors. The proposed filter is also capable of simultaneously receiving favorable low-, band-, and high-pass filter responses. The performance of the proposed filter was simulated and analyzed via HSPICE software (level 49) and 180 nm complementary metal-oxide-semiconductor technology. The rate of power consumption and noise obtained from simulations are 7.1 nW and 10.18 nA, respectively, so this filter has reduced noise as well as power consumption. The proposed universal OTA-C filter was designed based on the minimum number of transconductance blocks and an inverter circuit by three transconductance blocks (OTA).

  1. Power Allocation Strategies for Distributed Space-Time Codes in Amplify-and-Forward Mode

    Directory of Open Access Journals (Sweden)

    Are Hjørungnes

    2009-01-01

    Full Text Available We consider a wireless relay network with Rayleigh fading channels and apply distributed space-time coding (DSTC in amplify-and-forward (AF mode. It is assumed that the relays have statistical channel state information (CSI of the local source-relay channels, while the destination has full instantaneous CSI of the channels. It turns out that, combined with the minimum SNR based power allocation in the relays, AF DSTC results in a new opportunistic relaying scheme, in which the best relay is selected to retransmit the source's signal. Furthermore, we have derived the optimum power allocation between two cooperative transmission phases by maximizing the average received SNR at the destination. Next, assuming M-PSK and M-QAM modulations, we analyze the performance of cooperative diversity wireless networks using AF opportunistic relaying. We also derive an approximate formula for the symbol error rate (SER of AF DSTC. Assuming the use of full-diversity space-time codes, we derive two power allocation strategies minimizing the approximate SER expressions, for constrained transmit power. Our analytical results have been confirmed by simulation results, using full-rate, full-diversity distributed space-time codes.

  2. A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers

    International Nuclear Information System (INIS)

    Han Kefeng; Cao Shengguo; Tan Xi; Yan Na; Wang Junyu; Tang Zhangwen; Min Hao

    2010-01-01

    A two-stage differential linear power amplifier (PA) fabricated by 0.18 μm CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency (PAE) is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 x 0.55 mm 2 . System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader. (semiconductor integrated circuits)

  3. A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers

    Energy Technology Data Exchange (ETDEWEB)

    Han Kefeng; Cao Shengguo; Tan Xi; Yan Na; Wang Junyu; Tang Zhangwen; Min Hao, E-mail: tanxi@fudan.edu.cn [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

    2010-12-15

    A two-stage differential linear power amplifier (PA) fabricated by 0.18 {mu}m CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power, efficiency and harmonic performance. Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency (PAE) is 35.4%, the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled. The total area with ESD protected PAD is 1.2 x 0.55 mm{sup 2}. System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader. (semiconductor integrated circuits)

  4. Amplifier Distortion

    Science.gov (United States)

    Keeports, David

    2006-12-01

    By definition, a high fidelity amplifier's instantaneous output voltage is directly proportional to its instantaneous input voltage. While high fidelity is generally valued in the amplification of recorded music, nonlinearity, also known as distortion, is desirable in the amplification of some musical instruments. In particular, guitar amplifiers exploit nonlinearity to increase both the harmonic content and sustain of a guitar's sound. I will discuss how both modifications in sound result from saturation of triode tubes and transistors. Additionally, I will describe the difference in the symmetry of saturation curves for transistors and tubes and the reason why tube guitar amplifiers are generally considered to be superior to solid-state amplifiers. Finally, I will discuss attempts to use solid-state electronics to replicate the sound of tube amplifiers.

  5. Developing Student Worksheet Based On Higher Order Thinking Skills on the Topic of Transistor Power Amplifier

    Science.gov (United States)

    Sardia Ratna Kusuma, Luckey; Rakhmawati, Lusia; Wiryanto

    2018-04-01

    The purpose of this study is to develop a student worksheet about the transistor power amplifier based on higher order thinking skills include critical, logical, reflective, metacognitive, and creative thinking, which could be useful for teachers in improving student learning outcomes. Research and Development (R & D) methodology was used in this study. The pilot study of the worksheet was carried out with class X AV 2 at SMK Negeri 5 Surabaya. The result showed satisfies aspect of validity with 81.76 %, and effectiveness (students learning outcomes is classically passed out with percentage of 82.4 % and the students gave positive responses to the student worksheet of each statement. It can be concluded that this worksheet categorized good and worthy to be used as a source of learning in the learning activities.

  6. Adaptive Digital Predistortion Schemes to Linearize RF Power Amplifiers with Memory Effects

    Institute of Scientific and Technical Information of China (English)

    ZHANG Peng; WU Si-liang; ZHANG Qin

    2008-01-01

    To compensate for nonlinear distortion introduced by RF power amplifiers (PAs) with memory effects, two correlated models, namely an extended memory polynomial (EMP) model and a memory lookup table (LUT) model, are proposed for predistorter design. Two adaptive digital predistortion (ADPD) schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square (RLS) algorithm, and the other utilizes the memory LUT model and the least mean square (LMS) algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.

  7. Volterra series based predistortion for broadband RF power amplifiers with memory effects

    Institute of Scientific and Technical Information of China (English)

    Jin Zhe; Song Zhihuan; He Jiaming

    2008-01-01

    RF power amplifiers(PAs)are usually considered as memoryless devices in most existing predistortion techniques.However,in broadband communication systems,such as WCDMA,the PA memory effects are significant,and memoryless predistortion cannot linearize the PAs effectively.After analyzing the PA memory effects,a novel predistortion method based on the simplified Volterra series is proposed to linearize broadband RF PAs with memory effects.The indirect learning architecture is adopted to design the predistortion scheme and the recursive least squares algorithm with forgetting factor is applied to identify the parameters of the predistorter.Simulation results show that the proposed predistortion method can compensate the nonlinear distortion and memory effects of broadband RF PAs effectively.

  8. A high-frequency transimpedance amplifier for CMOS integrated 2D CMUT array towards 3D ultrasound imaging.

    Science.gov (United States)

    Huang, Xiwei; Cheong, Jia Hao; Cha, Hyouk-Kyu; Yu, Hongbin; Je, Minkyu; Yu, Hao

    2013-01-01

    One transimpedance amplifier based CMOS analog front-end (AFE) receiver is integrated with capacitive micromachined ultrasound transducers (CMUTs) towards high frequency 3D ultrasound imaging. Considering device specifications from CMUTs, the TIA is designed to amplify received signals from 17.5MHz to 52.5MHz with center frequency at 35MHz; and is fabricated in Global Foundry 0.18-µm 30-V high-voltage (HV) Bipolar/CMOS/DMOS (BCD) process. The measurement results show that the TIA with power-supply 6V can reach transimpedance gain of 61dBΩ and operating frequency from 17.5MHz to 100MHz. The measured input referred noise is 27.5pA/√Hz. Acoustic pulse-echo testing is conducted to demonstrate the receiving functionality of the designed 3D ultrasound imaging system.

  9. A High-Linearity Low-Noise Amplifier with Variable Bandwidth for Neural Recoding Systems

    Science.gov (United States)

    Yoshida, Takeshi; Sueishi, Katsuya; Iwata, Atsushi; Matsushita, Kojiro; Hirata, Masayuki; Suzuki, Takafumi

    2011-04-01

    This paper describes a low-noise amplifier with multiple adjustable parameters for neural recording applications. An adjustable pseudo-resistor implemented by cascade metal-oxide-silicon field-effect transistors (MOSFETs) is proposed to achieve low-signal distortion and wide variable bandwidth range. The amplifier has been implemented in 0.18 µm standard complementary metal-oxide-semiconductor (CMOS) process and occupies 0.09 mm2 on chip. The amplifier achieved a selectable voltage gain of 28 and 40 dB, variable bandwidth from 0.04 to 2.6 Hz, total harmonic distortion (THD) of 0.2% with 200 mV output swing, input referred noise of 2.5 µVrms over 0.1-100 Hz and 18.7 µW power consumption at a supply voltage of 1.8 V.

  10. Efficient Phase Locking of Fiber Amplifiers Using a Low-Cost and High-Damage-Threshold Phase Control System

    International Nuclear Information System (INIS)

    Pu, Zhou; Yan-Xing, Ma; Xiao-Lin, Wang; Hao-Tong, Ma; Xiao-Jun, Xu; Ze-Jin, Liu

    2010-01-01

    We propose a low-cost and high-damage-threshold phase control system that employs a piezoelectric ceramic transducer modulator controlled by a stochastic parallel gradient descent algorithm. Efficient phase locking of two fiber amplifiers is demonstrated. Experimental results show that energy encircled in the target pinhole is increased by a factor of 1.76 and the visibility of the fringe pattern is as high as 90% when the system is in close-loop. The phase control system has potential in phase locking of large-number and high-power fiber laser endeavors. (fundamental areas of phenomenology (including applications))

  11. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    OpenAIRE

    Pan, Hsuan-yu

    2010-01-01

    This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in- dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio's Quad. A broadband linear amplifier with 46dBm OIP₃ at 20MHz, 34dBm OIP₃ at 1GHz, 6dB noise figure and 10.3dBm P₁dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain...

  12. 5.2 GHz variable-gain amplifier and power amplifier driver for WLAN IEEE 802.11a transmitter front-end

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Xuelian; Yan Jun; Shi Yin [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Foster, Dai Fa, E-mail: xlzhang@semi.ac.c [Department of Electrical and Computer Engineering, Auburn University, Auburn, AL 36849-5201 (United States)

    2009-01-15

    A 5.2 GHz variable-gain amplifier (VGA) and a power amplifier (PA) driver are designed for WLAN IEEE 802.11a monolithic RFIC. The VGA and the PA driver are implemented in a 50 GHz 0.35 mum SiGe BiCMOS technology and occupy 1.12 x 1.25 mm{sup 2} die area. The VGA with effective temperature compensation is controlled by 5 bits and has a gain range of 34 dB. The PA driver with tuned loads utilizes a differential input, single-ended output topology, and the tuned loads resonate at 5.2 GHz. The maximum overall gain of the VGA and the PA driver is 29 dB with the output third-order intercept point (OIP3) of 11 dBm. The gain drift over the temperature varying from -30 to 85 deg. C converges within +-3 dB. The total current consumption is 45 mA under a 2.85 V power supply.

  13. High-power klystrons

    Science.gov (United States)

    Siambis, John G.; True, Richard B.; Symons, R. S.

    1994-05-01

    Novel emerging applications in advanced linear collider accelerators, ionospheric and atmospheric sensing and modification and a wide spectrum of industrial processing applications, have resulted in microwave tube requirements that call for further development of high power klystrons in the range from S-band to X-band. In the present paper we review recent progress in high power klystron development and discuss some of the issues and scaling laws for successful design. We also discuss recent progress in electron guns with potential grading electrodes for high voltage with short and long pulse operation via computer simulations obtained from the code DEMEOS, as well as preliminary experimental results. We present designs for high power beam collectors.

  14. Microwave phase shifter with controllable power response based on slow- and fast-light effects in semiconductor optical amplifiers.

    Science.gov (United States)

    Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

    2009-04-01

    We suggest and experimentally demonstrate a method for increasing the tunable rf phase shift of semiconductor waveguides while at the same time enabling control of the rf power. This method is based on the use of slow- and fast-light effects in a cascade of semiconductor optical amplifiers combined with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of approximately 240 degrees at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique is scalable to more amplifiers and should allow realization of an rf phase shift of 360 degrees.

  15. Modeling and Optimization of Class-E Amplifier at Subnominal Condition in a Wireless Power Transfer System for Biomedical Implants.

    Science.gov (United States)

    Liu, Hao; Shao, Qi; Fang, Xuelin

    2017-02-01

    For the class-E amplifier in a wireless power transfer (WPT) system, the design parameters are always determined by the nominal model. However, this model neglects the conduction loss and voltage stress of MOSFET and cannot guarantee the highest efficiency in the WPT system for biomedical implants. To solve this problem, this paper proposes a novel circuit model of the subnominal class-E amplifier. On a WPT platform for capsule endoscope, the proposed model was validated to be effective and the relationship between the amplifier's design parameters and its characteristics was analyzed. At a given duty ratio, the design parameters with the highest efficiency and safe voltage stress are derived and the condition is called 'optimal subnominal condition.' The amplifier's efficiency can reach the highest of 99.3% at the 0.097 duty ratio. Furthermore, at the 0.5 duty ratio, the measured efficiency of the optimal subnominal condition can reach 90.8%, which is 15.2% higher than that of the nominal condition. Then, a WPT experiment with a receiving unit was carried out to validate the feasibility of the optimized amplifier. In general, the design parameters of class-E amplifier in a WPT system for biomedical implants can be determined with the proposed optimization method in this paper.

  16. High power microwaves

    CERN Document Server

    Benford, James; Schamiloglu, Edl

    2016-01-01

    Following in the footsteps of its popular predecessors, High Power Microwaves, Third Edition continues to provide a wide-angle, integrated view of the field of high power microwaves (HPMs). This third edition includes significant updates in every chapter as well as a new chapter on beamless systems that covers nonlinear transmission lines. Written by an experimentalist, a theorist, and an applied theorist, respectively, the book offers complementary perspectives on different source types. The authors address: * How HPM relates historically and technically to the conventional microwave field * The possible applications for HPM and the key criteria that HPM devices have to meet in order to be applied * How high power sources work, including their performance capabilities and limitations * The broad fundamental issues to be addressed in the future for a wide variety of source types The book is accessible to several audiences. Researchers currently in the field can widen their understanding of HPM. Present or pot...

  17. High-power pre-chirp managed amplification of femtosecond pulses at high repetition rates

    International Nuclear Information System (INIS)

    Liu, Yang; Li, Wenxue; Zhao, Jian; Bai, Dongbi; Luo, Daping; Zeng, Heping

    2015-01-01

    Femtosecond pulses at 250 MHz repetition rate from a mode-locked fiber laser are amplified to high power in a pre-chirp managed amplifier. The experimental strategy offers a potential towards high-power ultrashort laser pulses at high repetition rates. By investigating the laser pulse evolution in the amplification processes, we show that self-similar evolution, finite gain bandwidth and mode instabilities determine pulse characteristics in different regimes. Further average power scaling is limited by the mode instabilities. Nevertheless, this laser system enables us to achieve sub-50 fs pulses with an average power of 93 W. (letter)

  18. High Power RF Transmitters for ICRF Applications on EAST

    International Nuclear Information System (INIS)

    Mao Yuzhou; Yuan Shuai; Zhao Yanping; Zhang Xinjun; Chen Gen; Cheng Yan; Wang Lei; Ju Songqing; Deng Xu; Qin Chengming; Yang Lei; Kumazawa, R.

    2013-01-01

    An Ion Cyclotron Range of Frequency (ICRF) system with a radio frequency (RF) power of 4 × 1.5 MW was developed for the Experimental Advanced Superconducting Tokamak (EAST). High RF power transmitters were designed as a part of the research and development (R and D) for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter: the three staged high power amplifier, which is composed of a 5 kW wideband solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply (HVPS). Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved.

  19. Techniques for preventing damage to high power laser components

    International Nuclear Information System (INIS)

    Stowers, I.F.; Patton, H.G.; Jones, W.A.; Wentworth, D.E.

    1977-09-01

    Techniques for preventing damage to components of the LASL Shiva high power laser system were briefly presented. Optical element damage in the disk amplifier from the combined fluence of the primary laser beam and the Xenon flash lamps that pump the cavity was discussed. Assembly and cleaning techniques were described which have improved optical element life by minimizing particulate and optically absorbing film contamination on assembled amplifier structures. A Class-100 vertical flaw clean room used for assembly and inspection of laser components was also described. The life of a disk amplifier was extended from less than 50 shots to 500 shots through application of these assembly and cleaning techniques

  20. An X-band high-impedance relativistic klystron amplifier with an annular explosive cathode

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Danni; Zhang, Jun, E-mail: zhangjun@nudt.edu.cn; Zhong, Huihuang; Qi, Zumin [College of Optoelectric Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2015-11-15

    The feasibility of employing an annular beam instead of a solid one in the X-band high-impedance relativistic klystron amplifier (RKA) is investigated in theory and simulation. Small-signal theory analysis indicates that the optimum bunching distance, fundamental current modulation depth, beam-coupling coefficient, and beam-loaded quality factor of annular beams are all larger than the corresponding parameters of solid beams at the same beam voltage and current. An annular beam RKA and a solid beam RKA with almost the same geometric parameters are compared in particle-in-cell simulation. Output microwave power of 100 MW, gain of 50 dB, and power conversion efficiency of 42% are obtained in an annular beam RKA. The annular beam needs a 15% lower uniform guiding magnetic field than the solid beam. Our investigations demonstrate that we are able to use a simple annular explosive cathode immersed in a lower uniform magnetic field instead of a solid thermionic cathode in a complicated partially shielding magnetic field for designing high-impedance RKA, which avoids high temperature requirement, complicated electron-optical system, large area convergence, high current density, and emission uniformity for the solid beam. An equivalent method for the annular beam and the solid beam on bunching features is proposed and agrees with the simulation. The annular beam has the primary advantages over the solid beam that it can employ the immersing uniform magnetic field avoiding the complicated shielding magnetic field system and needs a lower optimum guiding field due to the smaller space charge effect.

  1. DIII-D ICRF high voltage power supply regulator upgrade

    International Nuclear Information System (INIS)

    Cary, W.P.; Burley, B.L.; Grosnickle, W.H.

    1997-11-01

    For reliable operation and component protection, of the 2 MW 30--120 MHz ICRF Amplifier System on DIII-D, it is desirable for the amplifier to respond to high VSWR conditions as rapidly as possible. This requires a rapid change in power which also means a rapid change in the high voltage power supply current demands. An analysis of the power supply's regulator dynamics was needed to verify its expected operation during such conditions. Based on this information it was found that a new regulator with a larger dynamic range and some anticipation capability would be required. This paper will discuss the system requirements, the as-delivered regulator performance, and the improved performance after installation of the new regulator system. It will also be shown how this improvement has made the amplifier perform at higher power levels more reliably

  2. Control interlock and monitoring system for 80 KW IOT based RF power amplifier system at 505.812 MHz for Indus-2

    International Nuclear Information System (INIS)

    Kumar, Gautam; Deo, R.K.; Jain, M.K.; Bagre, Sunil; Hannurkar, P.R.

    2013-01-01

    For 80 kW inductive output tube (IOT) based RF power amplifier system at 505.812 MHz for Indus-2, a control, interlock and monitoring system is realized. This is to facilitate proper start-up and shutdown of the amplifier system, monitor various parameters to detect any malfunction during its operation and to bring the system in a safe stage, thereby assuring reliable operation of the amplifier system. This high power amplifier system incorporates interlocks such as cooling interlocks, various voltage and current interlocks and time critical RF interlocks. Processing of operation sequence, cooling interlocks and various voltage and current interlocks have been realized by using Siemens make S7-CPU-315-2DP (CPU) based programmable logic controller (PLC) system. While time critical or fast interlocks have been realized by using Siemens make FPGA based Boolean Co-processor FM-352-5 which operates in standalone mode. Siemens make operating panel OP277 6'' is being used as a human machine interface (HMI) device for command, data, alarm generation and process parameter monitoring. (author)

  3. Optimal control of a high-frequency class-D amplifier

    DEFF Research Database (Denmark)

    Dahl, Nicolai J.; Iversen, Niels Elkjær; Knott, Arnold

    2018-01-01

    Control loops have been used with switch-mode audio amplifiers to improve the sound quality of the amplifier. Because these amplifiers use a high-frequency modulation, precautions in the controller design must be taken. Further, the quality factor of the output filter can have a great impact...... on the controller's capabilities to suppress noise and track the audio signal. In this paper design methods for modern control are presented. The control method proves to easily overcome the challenge of designing a good performing controller when the output filter has a high quality factor. The results show...... that the controller is able to produce a clear improvement in the Total Harmonic Distortion with up to a 30 times improvement compared to open-loop with a clear reduction in the noise. This places the audio quality on pair with current solutions....

  4. Diode pumped 1kHz high power Nd:YAG laser with excellent beam quality

    NARCIS (Netherlands)

    Godfried, Herman; Godfried, H.P; Offerhaus, Herman L.

    1997-01-01

    The design and operation of a one kilohertz diode pumped all solid-state Nd:YAG master oscillator power amplifier system with a phase conjugate mirror is presented. The setup allows high power scaling without reduction in beam quality.

  5. A phase-shift self-oscillating stereo class-D amplifier for battery-powered applications

    OpenAIRE

    Huffenus , Alexandre; Pillonnet , Gaël; Abouchi , Nacer; Goutti , Frédéric; Rabary , Vincent; Specq , Cécile

    2010-01-01

    International audience; This paper presents a highly efficient stereo audio amplifier, based on a self-oscillating modulator. This modulation scheme has been analyzed and shows to have a higher bandwidth and error correction than standard Pulse Width Modulation (PWM). A practical implementation in CMOS 0.25um technology has been done to validate our theoretical and simulation results. Our amplifier demonstrated a Total Harmonic Distortion plus Noise (THD+N) as low as 0.07%, current consumptio...

  6. Development of Diamond Vacuum Differential Amplifier for Harsh Environment Power Electronics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Scientic, Inc., in collaboration with Vanderbilt University, proposes to develop a novel vacuum field emission differential amplifier (VFEDA) using low electron...

  7. Microwave phase shifter with controllable power response based on slow-and fast-light effects in semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Xue, Weiqi; Sales, Salvador; Capmany, Jose

    2009-01-01

    with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of 240° at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique...

  8. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

    Science.gov (United States)

    England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

  9. Stress Recovery Effects of High- and Low-Frequency Amplified Music on Heart Rate Variability.

    Science.gov (United States)

    Nakajima, Yoshie; Tanaka, Naofumi; Mima, Tatsuya; Izumi, Shin-Ichi

    Sounds can induce autonomic responses in listeners. However, the modulatory effect of specific frequency components of music is not fully understood. Here, we examined the role of the frequency component of music on autonomic responses. Specifically, we presented music that had been amplified in the high- or low-frequency domains. Twelve healthy women listened to white noise, a stress-inducing noise, and then one of three versions of a piece of music: original, low-, or high-frequency amplified. To measure autonomic response, we calculated the high-frequency normalized unit (HFnu), low-frequency normalized unit, and the LF/HF ratio from the heart rate using electrocardiography. We defined the stress recovery ratio as the value obtained after participants listened to music following scratching noise, normalized by the value obtained after participants listened to white noise after the stress noise, in terms of the HFnu, low-frequency normalized unit, LF/HF ratio, and heart rate. Results indicated that high-frequency amplified music had the highest HFnu of the three versions. The stress recovery ratio of HFnu under the high-frequency amplified stimulus was significantly larger than that under the low-frequency stimulus. Our results suggest that the high-frequency component of music plays a greater role in stress relief than low-frequency components.

  10. Practical considerations for integrating switch mode audio amplifiers and loudspeakers for a higher power efficiency

    DEFF Research Database (Denmark)

    Poulsen, Søren; Andersen, Michael Andreas E.

    2004-01-01

    An integration of electrodynamic loudspeakers and switch mode amplifiers has earlier been proposed in [1]. The work presented in this paper is related to the practical aspects of integration of switch mode audio amplifiers and electro dynamic loudspeakers, using the speaker’s voice coil as output...

  11. Switching power converters medium and high power

    CERN Document Server

    Neacsu, Dorin O

    2013-01-01

    An examination of all of the multidisciplinary aspects of medium- and high-power converter systems, including basic power electronics, digital control and hardware, sensors, analog preprocessing of signals, protection devices and fault management, and pulse-width-modulation (PWM) algorithms, Switching Power Converters: Medium and High Power, Second Edition discusses the actual use of industrial technology and its related subassemblies and components, covering facets of implementation otherwise overlooked by theoretical textbooks. The updated Second Edition contains many new figures, as well as

  12. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  13. Radially resolved simulation of a high-gain free electron laser amplifier

    International Nuclear Information System (INIS)

    Fawley, W.M.; Prosnitz, D.; Doss, S.; Gelinas, R.

    1983-01-01

    The results of a two-dimensional simulation of a high-gain free electron laser (FEL) amplifier is presented. The simulation solves the inhomogeneous paraxial wave equation. The source term is radially resolved and is obtained by tracking the interaction of the laser field with localized macroparticles

  14. High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

    NARCIS (Netherlands)

    Houin, G.J.R.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

    2016-01-01

    The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance

  15. Wide bandwidth high efficiency power converter for rf amplifiers

    OpenAIRE

    Vasic, Miroslav

    2010-01-01

    Tradicionalmente, en el mundo de la amplificación de potencia de alta frecuencia, se han distinguido dos grandes familias de amplificadores de potencia, atendiendo al efecto de su utilización sobre las señales amplificadas por los mismos: lineales y no lineales. Los amplificadores lineales se han relacionado con las clases de amplificación A, B y AB generalmente poco eficaces en el aprovechamiento de la energía, mientras que los amplificadores no lineales se han asociado a clases de funcionam...

  16. High power ubitron-klystron

    International Nuclear Information System (INIS)

    Balkcum, A.J.; McDermott, D.B.; Luhmann, N.C. Jr.

    1997-01-01

    A coaxial ubitron is being considered as the rf driver for the Next Linear Collider (NLC). Prior simulation of a traveling-wave ubitron using a self-consistent code found that 200 MW of power and 53 dB of gain could be achieved with 37% efficiency. In a ubiron-klystron, a series of cavities are used to obtain an even tighter electron bunch for higher efficiency. A small-signal theory of the ubitron-klystron shows that gain scales with the square of the cavity separation distance. A linear stability theory has also been developed. Verification of the stability theory has been achieved using the 2-12-D PIC code, MAGIC, and the particle-tracing code. Saturation characteristics of the amplifier will be presented using both MAGIC and a simpler self-consistent slow-timescale code currently under development. The ubitron can also operate as a compact, highly efficient oscillator. Cavities only two wiggler periods in length have yielded up to 40% rf conversion efficiency in simulation. An initial oscillator design for directed energy applications will also be presented

  17. A study on the high-order mode oscillation in a four-cavity intense relativistic klystron amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ying-Hui; Niu, Xin-Jian; Wang, Hui [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu (China); Jia, Nan; Duan, Yaoyong [The Chinese People' s Armed Police Force Academy, Hebei (China); Li, Zheng-Hong [Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP, Mianyang (China); Cheng, Hui [Microwave Department, Sichuan Jiuzhou Electric Appliance Group Co., Ltd., Mianyang (China); Yang, Xiao-Chuan [Computational Aerodynamics Institute, China Aerodynamics Research and Development Center, Mianyang (China)

    2016-07-15

    The high-order mode oscillation is studied in designing a four-cavity intense relativistic klystron amplifier. The reason for the oscillation caused by high-order modes and a method to suppress these kinds of spurious modes are found through theoretical analyses and the study on the influence of major parameters of a high frequency structure (such as the oscillation frequency of cavities, the cavity Q value, the length of drift tube section, and the characteristic impedance). Based on much simulation, a four-cavity intense relativistic klystron amplifier with a superior performance has been designed, built, and tested. An output power of 2.22 GW corresponding to 27.4% efficiency and 61 dB gain has been obtained. Moreover, the high-order mode oscillation is suppressed effectively, and an output power of 1.95 GW corresponding to 26% efficiency and 62 dB gain has been obtained in our laboratory.

  18. A Reactance Compensated Three-Device Doherty Power Amplifier for Bandwidth and Back-Off Range Extension

    Directory of Open Access Journals (Sweden)

    Shichang Chen

    2018-01-01

    Full Text Available This paper proposes a new broadband Doherty power amplifier topology with extended back-off range. A shunted λ/4 short line or λ/2 open line working as compensating reactance is introduced to the conventional load modulation network, which greatly improves its bandwidth. Underlying bandwidth extension mechanism of the proposed configuration is comprehensively analyzed. A three-device Doherty power amplifier is implemented for demonstration based on Cree’s 10 W HEMTs. Measurements show that at least 41% drain efficiency is maintained from 2.0 GHz to 2.6 GHz at 8 dB back-off range. In the same operating band, saturation power is larger than 43.6 dBm and drain efficiency is higher than 53%.

  19. High power RF oscillator with Marx generators

    International Nuclear Information System (INIS)

    Murase, Hiroshi; Hayashi, Izumi

    1980-01-01

    A method to maintain RF oscillation by using many Marx generators was proposed and studied experimentally. Many charging circuits were connected to an oscillator circuit, and successive pulsed charging was made. This successive charging amplified and maintained the RF oscillation. The use of vacuum gaps and high power silicon diodes improved the characteristics of RF current cut-off of the circuit. The efficiency of the pulsed charging from Marx generators to a condenser was theoretically investigated. The theoretical result showed the maximum efficiency of 0.98. The practical efficiency obtained by using a proposed circuit with a high power oscillator was in the range 0.50 to 0.56. The obtained effective output power of the RF pulses was 11 MW. The maximum holding time of the RF pulses was about 21 microsecond. (Kato, T.)

  20. Design of the 150 kW, 46-62 MHz power amplifier for the TRIUMF KAON factory booster ring

    International Nuclear Information System (INIS)

    Kwiatkowski, S.; Enegren, T.; Poirier, R.L.

    1988-06-01

    The rf amplifiers for the KAON Factory booster ring must be capable of reactively compensating (detuning) for the injected/extracted beam load as well as providing the beam power and the cavity losses. In order to insure the stability of the rf system under heavy transient and steady state beam loading conditions it is necessary to equip the power amplifiers with fast rf feedback with sufficient gain and bandwidth to reduce the apparent Q of the rf amplifier system as seen by the beam and the other feedback loops. The maximum gain and bandwidth of such a feedback loop is limited by the propagation delay around the feedback path. To minimize the propagation delay a 2.4 kW two stage solid state driver will be used to drive the cathode of the Eimac Y567B tetrode to give an overall propagation delay less than 30 nS. The design features of the rf amplifier to meet the above conditions will be described and test results reported. (Author) (7 refs., 7 figs.)

  1. Development of Diamond Vacuum Differential Amplifier for Harsh Environment Power Electronics, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In this proposed Phase II, Scientic and Vanderbilt University will develop a novel vacuum field emission differential amplifier (VFEDA) using low electron affinity...

  2. High-Efficiency K-Band Space Traveling-Wave Tube Amplifier for Near-Earth High Data Rate Communications

    Science.gov (United States)

    Simons, Rainee N.; Force, Dale A.; Spitsen, Paul C.; Menninger, William L.; Robbins, Neal R.; Dibb, Daniel R.; Todd, Phillip C.

    2010-01-01

    The RF performance of a new K-Band helix conduction cooled traveling-wave tube amplifier (TWTA), is presented in this paper. A total of three such units were manufactured, tested and delivered. The first unit is currently flying onboard NASA's Lunar Reconnaissance Orbiter (LRO) spacecraft and has flawlessly completed over 2000 orbits around the Moon. The second unit is a proto-flight model. The third unit will fly onboard NASA's International Space Station (ISS) as a very compact and lightweight transmitter package for the Communications, Navigation and Networking Reconfigurable Testbed (CoNNeCT), which is scheduled for launch in 2011. These TWTAs were characterized over the frequencies 25.5 to 25.8 GHz. The saturated RF output power is greater than 40 W and the saturated RF gain is greater than 46 dB. The saturated AM-to-PM conversion is 3.5 /dB and the small signal gain ripple is 0.46 dB peak-to-peak. The overall efficiency of the TWTA, including that of the electronic power conditioner (EPC) is as high as 45%.

  3. Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

    KAUST Repository

    Zafar, Ammar

    2012-06-01

    In this report, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized while keeping the signal-to-noise-ratio (SNR) above a certain threshold. In the dual problem of power allocation, the end-to-end SNR is maximized under individual and global power constraints. Closed-form expressions for the optimal source and relay powers and the Lagrangian multiplier are obtained. Numerical results show that the optimal power allocation with partial CSI provides comparable performance as optimal power allocation with full CSI at low SNR.

  4. Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

    KAUST Repository

    Zafar, Ammar

    2012-09-16

    In this letter, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized while keeping the signal-to-noise-ratio (SNR) above a certain threshold. In the dual problem of power allocation, the end-to-end SNR is maximized under individual and global power constraints. Closed-form expressions for the optimal source and relay powers and the Lagrangian multiplier are obtained. Numerical results show that the optimal power allocation with partial CSI provides comparable performance as optimal power allocation with full CSI at low SNR. © 2012 IEEE.

  5. Experimental characteristics of a high-gain free-electron laser amplifier operating at 8-mm and 2-mm wavelengths

    International Nuclear Information System (INIS)

    Throop, A.L.; Orzechowski, T.J.; Anderson, B.R.

    1987-01-01

    The Electron Laser Facility (ELF) at the Lawrence Livermore National Laboratory (LLNL) uses a high-current induction linac (3.5 MeV, 1000 A), in conjunction with a pulsed electromagnetic wiggler (4.0 M, 4000 G), to operate a free electron laser (FEL) that produces intense radiation in the microwave regime (2 to 8 mm). ELF is a high-gain, single-pass amplifier, using a commercial microwave source as an oscillator input (200 W-50 kW). Previous experiments at 35 GHz produced exponential gains of 40 dB/m, peak powers exceeding 1 GW, and beam-to-rf conversion efficiencies of 34%. Recent experiments at 140 GHz have demonstrated exponential gains of 22 dB/m, peak powers exceeding 50 MW, and total gains of 65 dB. In this paper, we describe the experimental results at these two frequencies and compare then with the predictions of simulation codes

  6. A CMOS power-efficient low-noise current-mode front-end amplifier for neural signal recording.

    Science.gov (United States)

    Wu, Chung-Yu; Chen, Wei-Ming; Kuo, Liang-Ting

    2013-04-01

    In this paper, a new current-mode front-end amplifier (CMFEA) for neural signal recording systems is proposed. In the proposed CMFEA, a current-mode preamplifier with an active feedback loop operated at very low frequency is designed as the first gain stage to bypass any dc offset current generated by the electrode-tissue interface and to achieve a low high-pass cutoff frequency below 0.5 Hz. No reset signal or ultra-large pseudo resistor is required. The current-mode preamplifier has low dc operation current to enhance low-noise performance and decrease power consumption. A programmable current gain stage is adopted to provide adjustable gain for adaptive signal scaling. A following current-mode filter is designed to adjust the low-pass cutoff frequency for different neural signals. The proposed CMFEA is designed and fabricated in 0.18-μm CMOS technology and the area of the core circuit is 0.076 mm(2). The measured high-pass cutoff frequency is as low as 0.3 Hz and the low-pass cutoff frequency is adjustable from 1 kHz to 10 kHz. The measured maximum current gain is 55.9 dB. The measured input-referred current noise density is 153 fA /√Hz , and the power consumption is 13 μW at 1-V power supply. The fabricated CMFEA has been successfully applied to the animal test for recording the seizure ECoG of Long-Evan rats.

  7. Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate

    DEFF Research Database (Denmark)

    Dantan, Aurelien Romain; Laurat, Julien; Ourjoumtsev, Alexei

    2007-01-01

    We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors a...... as high as 17 and 320 nJ Fourier-limited pulses are obtained at a 800 kHz repetition rate....

  8. Semiconductor optical amplifier-based all-optical gates for high-speed optical processing

    DEFF Research Database (Denmark)

    Stubkjær, Kristian

    2000-01-01

    Semiconductor optical amplifiers are useful building blocks for all-optical gates as wavelength converters and OTDM demultiplexers. The paper reviews the progress from simple gates using cross-gain modulation and four-wave mixing to the integrated interferometric gates using cross-phase modulation....... These gates are very efficient for high-speed signal processing and open up interesting new areas, such as all-optical regeneration and high-speed all-optical logic functions...

  9. High Power Density Motors

    Science.gov (United States)

    Kascak, Daniel J.

    2004-01-01

    With the growing concerns of global warming, the need for pollution-free vehicles is ever increasing. Pollution-free flight is one of NASA's goals for the 21" Century. , One method of approaching that goal is hydrogen-fueled aircraft that use fuel cells or turbo- generators to develop electric power that can drive electric motors that turn the aircraft's propulsive fans or propellers. Hydrogen fuel would likely be carried as a liquid, stored in tanks at its boiling point of 20.5 K (-422.5 F). Conventional electric motors, however, are far too heavy (for a given horsepower) to use on aircraft. Fortunately the liquid hydrogen fuel can provide essentially free refrigeration that can be used to cool the windings of motors before the hydrogen is used for fuel. Either High Temperature Superconductors (HTS) or high purity metals such as copper or aluminum may be used in the motor windings. Superconductors have essentially zero electrical resistance to steady current. The electrical resistance of high purity aluminum or copper near liquid hydrogen temperature can be l/lOO* or less of the room temperature resistance. These conductors could provide higher motor efficiency than normal room-temperature motors achieve. But much more importantly, these conductors can carry ten to a hundred times more current than copper conductors do in normal motors operating at room temperature. This is a consequence of the low electrical resistance and of good heat transfer coefficients in boiling LH2. Thus the conductors can produce higher magnetic field strengths and consequently higher motor torque and power. Designs, analysis and actual cryogenic motor tests show that such cryogenic motors could produce three or more times as much power per unit weight as turbine engines can, whereas conventional motors produce only 1/5 as much power per weight as turbine engines. This summer work has been done with Litz wire to maximize the current density. The current is limited by the amount of heat it

  10. High-power electronics

    CERN Document Server

    Kapitsa, Petr Leonidovich

    1966-01-01

    High-Power Electronics, Volume 2 presents the electronic processes in devices of the magnetron type and electromagnetic oscillations in different systems. This book explores the problems of electronic energetics.Organized into 11 chapters, this volume begins with an overview of the motion of electrons in a flat model of the magnetron, taking into account the in-phase wave and the reverse wave. This text then examines the processes of transmission of electromagnetic waves of various polarization and the wave reflection from grids made of periodically distributed infinite metal conductors. Other

  11. High Power Vanadate lasers

    CSIR Research Space (South Africa)

    Strauss

    2006-07-01

    Full Text Available stream_source_info Strauss1_2006.pdf.txt stream_content_type text/plain stream_size 3151 Content-Encoding UTF-8 stream_name Strauss1_2006.pdf.txt Content-Type text/plain; charset=UTF-8 Laser Research Institute... University of Stellenbosch www.laser-research.co.za High Power Vanadate lasers H.J.Strauss, Dr. C. Bollig, R.C. Botha, Prof. H.M. von Bergmann, Dr. J.P. Burger Aims 1) To develop new techniques to mount laser crystals, 2) compare the lasing properties...

  12. Circuit for Communication over DC Power Line Using High Temperature Electronics

    Science.gov (United States)

    Krasowski, Michael J. (Inventor); Prokop, Norman F. (Inventor)

    2014-01-01

    A high temperature communications circuit includes a power conductor for concurrently conducting electrical energy for powering circuit components and transmitting a modulated data signal, and a demodulator for demodulating the data signal and generating a serial bit stream based on the data signal. The demodulator includes an absolute value amplifier for conditionally inverting or conditionally passing a signal applied to the absolute value amplifier. The absolute value amplifier utilizes no diodes to control the conditional inversion or passing of the signal applied to the absolute value amplifier.

  13. A low power and low distortion rail-to-rail input/output amplifier using constant current technique

    International Nuclear Information System (INIS)

    Liu Yan; Zhao Yiqiang; Zhang Shilin; Zhao Hongliang

    2011-01-01

    A rail-to-rail amplifier with constant transconductance, intended for audio processing, is presented. The constant transconductance is obtained by a constant current technique based on the input differential pairs operating in the weak inversion region. MOSFETs working in the weak inversion region have the advantages of low power and low distortion. The proposed rail-to-rail amplifier, fabricated in a standard 0.35 μm CMOS process, occupies a core die area of 75 x 183 μm 2 . Measured results show that the maximum power consumption is 85.37 μW with a supply voltage of 3.3 V and the total harmonic distortion level is 1.2% at 2 kHz. (semiconductor integrated circuits)

  14. Low power consumption and high temperature durability for radiation sensor

    International Nuclear Information System (INIS)

    Matsumoto, Yoshinori; Ueno, Hiroto

    2015-01-01

    Low power consumption and high temperature operation are important in an environmental monitoring system. The power consumption of 3 mW is achieved for the radiation sensor using low voltage operational amplifier and comparator in the signal processing circuit. The leakage reverse current of photodiode causes the charge amplifier saturation over 50degC. High temperature durability was improved by optimizing the circuit configuration and the values of feedback resistance and capacitance in the charge amplifier. The pulse response of the radiation sensor was measured up to 55degC. The custom detection circuit was designed by 0.6 μm CMOS process at 5-V supply voltage. The operation temperature was improved up to 65degC. (author)

  15. A high-gain and high-efficiency X-band triaxial klystron amplifier with two-stage cascaded bunching cavities

    Science.gov (United States)

    Zhang, Wei; Ju, Jinchuan; Zhang, Jun; Zhong, Huihuang

    2017-12-01

    To achieve GW-level amplification output radiation at the X-band, a relativistic triaxial klystron amplifier with two-stage cascaded double-gap bunching cavities is investigated. The input cavity is optimized to obtain a high absorption rate of the external injection microwave. The cascaded bunching cavities are optimized to achieve a high depth of the fundamental harmonic current. A double-gap standing wave extractor is designed to improve the beam wave conversion efficiency. Two reflectors with high reflection coefficients both to the asymmetric mode and the TEM mode are employed to suppress the asymmetric mode competition and TEM mode microwave leakage. Particle-in-cell simulation results show that a high power microwave with a power of 2.53 GW and a frequency of 8.4 GHz is generated with a 690 kV, 9.3 kA electron beam excitation and a 25 kW seed microwave injection. Particularly, the achieved power conversion efficiency is about 40%, and the gain is as high as 50 dB. Meanwhile, there is insignificant self-excitation of the parasitic mode in the proposed structure by adopting the reflectors. The relative phase difference between the injected signals and the output microwaves keeps locked after the amplifier becomes saturated.

  16. Spot-shadowing optimization to mitigate damage growth in a high-energy-laser amplifier chain.

    Science.gov (United States)

    Bahk, Seung-Whan; Zuegel, Jonathan D; Fienup, James R; Widmayer, C Clay; Heebner, John

    2008-12-10

    A spot-shadowing technique to mitigate damage growth in a high-energy laser is studied. Its goal is to minimize the energy loss and undesirable hot spots in intermediate planes of the laser. A nonlinear optimization algorithm solves for the complex fields required to mitigate damage growth in the National Ignition Facility amplifier chain. The method is generally applicable to any large fusion laser.

  17. EROIC: a BiCMOS pseudo-gaussian shaping amplifier for high-resolution X-ray spectroscopy

    Science.gov (United States)

    Buzzetti, Siro; Guazzoni, Chiara; Longoni, Antonio

    2003-10-01

    We present the design and complete characterization of a fifth-order pseudo-gaussian shaping amplifier with 1 μs shaping time. The circuit is optimized for the read-out of signals coming from Silicon Drift Detectors for high-resolution X-ray spectroscopy. The novelty of the designed chip stands in the use of a current feedback loop to place the poles in the desired position on the s-plane. The amplifier has been designed in 0.8 μm BiCMOS technology and fully tested. The EROIC chip comprises also the peak stretcher, the peak detector, the output buffer to drive the external ADC and the pile-up rejection system. The circuit needs a single +5 V power supply and the dissipated power is 5 mW per channel. The digital outputs can be directly coupled to standard digital CMOS ICs. The measured integral-non-linearity of the whole chip is below 0.05% and the achieved energy resolution at the Mn Kα line detected by a 5 mm 2 Peltier-cooled Silicon Drift Detector is 167 eV FWHM.

  18. EROIC: a BiCMOS pseudo-gaussian shaping amplifier for high-resolution X-ray spectroscopy

    International Nuclear Information System (INIS)

    Buzzetti, Siro; Guazzoni, Chiara; Longoni, Antonio

    2003-01-01

    We present the design and complete characterization of a fifth-order pseudo-gaussian shaping amplifier with 1 μs shaping time. The circuit is optimized for the read-out of signals coming from Silicon Drift Detectors for high-resolution X-ray spectroscopy. The novelty of the designed chip stands in the use of a current feedback loop to place the poles in the desired position on the s-plane. The amplifier has been designed in 0.8 μm BiCMOS technology and fully tested. The EROIC chip comprises also the peak stretcher, the peak detector, the output buffer to drive the external ADC and the pile-up rejection system. The circuit needs a single +5 V power supply and the dissipated power is 5 mW per channel. The digital outputs can be directly coupled to standard digital CMOS ICs. The measured integral-non-linearity of the whole chip is below 0.05% and the achieved energy resolution at the Mn Kα line detected by a 5 mm 2 Peltier-cooled Silicon Drift Detector is 167 eV FWHM

  19. Efficient fiber-laser-pumped Ho:YLF oscillator and amplifier utilizing the transmitted pump power of the oscillator

    CSIR Research Space (South Africa)

    Strauss, HJ

    2009-06-01

    Full Text Available the amplifier. OCIS codes: 140.0140, 140.3070, 140.3480, 140.3580, 140.5680s 1. Introduction High energy 2 �m laser sources are of great interested for applications in remote sensing, medicine and defense. Ho:YLF is an attractive laser material to use since...

  20. Properties and structure of high erbium doped phosphate glass for short optical fibers amplifiers

    International Nuclear Information System (INIS)

    Seneschal, Karine; Smektala, Frederic; Bureau, Bruno; Floch, Marie Le; Jiang Shibin; Luo, Tao; Lucas, Jacques; Peyghambarian, Nasser

    2005-01-01

    New phosphate glasses have been developed in order to incorporate high rare-earth ions concentrations. These glasses present a great chemical stability and a high optical quality. The phosphate glass network is open, very flexible, with a linkage of the tetrahedrons very disordered and contains a larger number of non-bridging oxygens (66%). The great stability and resistance against crystallization associated with the possibility to incorporate high doping concentration of rare-earth ions in these phosphate glasses make them very good candidates for the realization of ultra short single mode amplifiers with a high gain at 1.55 μm

  1. Time-division polynomial pre-distorter for linearisation of 1.5 T MRI power amplifier

    Directory of Open Access Journals (Sweden)

    Ming Hui

    2017-06-01

    Full Text Available A time-division polynomial (TDP model is proposed for modelling and linearising a 1.5 T magnetic resonance imaging (MRI power amplifier (PA with strong non-linearity in high input signal dynamic range. In order to demonstrate the merit of this non-linear model, a 64 dBm 1.5 T MRI PA (63.89 MHz and two different Sinc-pulse signals are used in modelling and linearisation measurements. The TDP is compared with the conventional non-memory polynomial (NMP and no digital pre-distortion for the 1.5 T MRI PA, which is driven by test signal with 2 ms time length and 2% duty cycle. The proposed TDP leads to up to 9 dB improvement in the normalised mean square error compared with the NMP in two different test signals. More importantly, TDP illustrates significantly better reduction in amplitude modulation/amplitude modulation (AM/AM and amplitude modulation/phase modulation (AM/PM conversion compared with the NMP.

  2. BER and optimal power allocation for amplify-and-forward relaying using pilot-aided maximum likelihood estimation

    KAUST Repository

    Wang, Kezhi

    2014-10-01

    Bit error rate (BER) and outage probability for amplify-and-forward (AF) relaying systems with two different channel estimation methods, disintegrated channel estimation and cascaded channel estimation, using pilot-aided maximum likelihood method in slowly fading Rayleigh channels are derived. Based on the BERs, the optimal values of pilot power under the total transmitting power constraints at the source and the optimal values of pilot power under the total transmitting power constraints at the relay are obtained, separately. Moreover, the optimal power allocation between the pilot power at the source, the pilot power at the relay, the data power at the source and the data power at the relay are obtained when their total transmitting power is fixed. Numerical results show that the derived BER expressions match with the simulation results. They also show that the proposed systems with optimal power allocation outperform the conventional systems without power allocation under the same other conditions. In some cases, the gain could be as large as several dB\\'s in effective signal-to-noise ratio.

  3. BER and optimal power allocation for amplify-and-forward relaying using pilot-aided maximum likelihood estimation

    KAUST Repository

    Wang, Kezhi; Chen, Yunfei; Alouini, Mohamed-Slim; Xu, Feng

    2014-01-01

    Bit error rate (BER) and outage probability for amplify-and-forward (AF) relaying systems with two different channel estimation methods, disintegrated channel estimation and cascaded channel estimation, using pilot-aided maximum likelihood method in slowly fading Rayleigh channels are derived. Based on the BERs, the optimal values of pilot power under the total transmitting power constraints at the source and the optimal values of pilot power under the total transmitting power constraints at the relay are obtained, separately. Moreover, the optimal power allocation between the pilot power at the source, the pilot power at the relay, the data power at the source and the data power at the relay are obtained when their total transmitting power is fixed. Numerical results show that the derived BER expressions match with the simulation results. They also show that the proposed systems with optimal power allocation outperform the conventional systems without power allocation under the same other conditions. In some cases, the gain could be as large as several dB's in effective signal-to-noise ratio.

  4. A high PSRR Class-D audio amplifier IC based on a self-adjusting voltage reference

    OpenAIRE

    Huffenus , Alexandre; Pillonnet , Gaël; Abouchi , Nacer; Goutti , Frédéric; Rabary , Vincent; Cittadini , Robert

    2010-01-01

    International audience; In a wide range of applications, audio amplifiers require a large Power Supply Rejection Ratio (PSRR) that the current Class-D architecture cannot reach. This paper proposes a self-adjusting internal voltage reference scheme that sets the bias voltages of the amplifier without losing on output dynamics. This solution relaxes the constraints on gain and feedback resistors matching that were previously the limiting factor for the PSRR. Theory of operation, design and IC ...

  5. High power communication satellites power systems study

    International Nuclear Information System (INIS)

    Josloff, A.T.; Peterson, J.R.

    1994-01-01

    This paper discusses a DOE-funded study to evaluate the commercial attractiveness of high power communication satellites and assesses the attributes of both conventional photovoltaic and reactor power systems. This study brings together a preeminent US Industry/Russian team to cooperate on the role of high power communication satellites in the rapidly expanding communications revolution. These high power satellites play a vital role in assuring availability of universally accessible, wide bandwidth communications, for high definition TV, super computer networks and other services. Satellites are ideally suited to provide the wide bandwidths and data rates required and are unique in the ability to provide services directly to the users. As new or relocated markets arise, satellites offer a flexibility that conventional distribution services cannot match, and it is no longer necessary to be near population centers to take advantage of the telecommunication revolution. The geopolitical implications of these substantially enhanced communications capabilities will be significant

  6. Fiber Amplifiers

    DEFF Research Database (Denmark)

    Rottwitt, Karsten

    2017-01-01

    The chapter provides a discussion of optical fiber amplifiers and through three sections provides a detailed treatment of three types of optical fiber amplifiers, erbium doped fiber amplifiers (EDFA), Raman amplifiers, and parametric amplifiers. Each section comprises the fundamentals including...... the basic physics and relevant in-depth theoretical modeling, amplifiers characteristics and performance data as a function of specific operation parameters. Typical applications in fiber optic communication systems and the improvement achievable through the use of fiber amplifiers are illustrated....

  7. Performance of a Combined System Using an X-Ray FEL Oscillator and a High-Gain FEL Amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, L.; Lindberg, R.; Kim, K. -J.

    2017-06-01

    The LCLS-II at SLAC will feature a 4 GeV CW superconducting (SC) RF linac [1] that can potentially drive a 5th harmonic X-Ray FEL Oscillator (XFELO) to produce fully coherent, 1 MW photon pulses with a 5 meV bandwidth at 14.4 keV [2]. The XFELO output can serve as the input seed signal for a high-gain FEL amplifier employing fs electron beams from the normal conducting SLAC linac, thereby generating coherent, fs x-ray pulses with TW peak powers using a tapered undulator after saturation [3]. Coherent, intense output at several tens of keV will also be feasible if one considers a harmonic generation scheme. Thus, one can potentially reach the 42 keV photon energy required for the MaRIE project [4] by beginning with an XFELO operating at the 3rd harmonic to produce 14.0 keV photons using a 12 GeV SCRF linac, and then subsequently using the high-gain harmonic generation scheme to generate and amplify the 3th harmonic at 42 keV [5]. We report extensive GINGER simulations that determine an optimized parameter set for the combined system.

  8. Design and analysis of an integrated pulse modulated s-band power amplifier in gallium nitride process

    Energy Technology Data Exchange (ETDEWEB)

    Sedlock, Steve [Kansas State Univ., Manhattan, KS (United States)

    2012-01-01

    The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

  9. Nuclear power flies high

    International Nuclear Information System (INIS)

    Friedman, S.T.

    1983-01-01

    Nuclear power in aircraft, rockets and satellites is discussed. No nuclear-powered rockets or aircraft have ever flown, but ground tests were successful. Nuclear reactors are used in the Soviet Cosmos serles of satellites, but only one American satellite, the SNAP-10A, contained a reactor. Radioisotope thermoelectric generators, many of which use plutonium 238, have powered more than 20 satellites launched into deep space by the U.S.A

  10. Portable musical instrument amplifier

    Science.gov (United States)

    Christian, David E.

    1990-07-24

    The present invention relates to a musical instrument amplifier which is particularly useful for electric guitars. The amplifier has a rigid body for housing both the electronic system for amplifying and processing signals from the guitar and the system's power supply. An input plug connected to and projecting from the body is electrically coupled to the signal amplifying and processing system. When the plug is inserted into an output jack for an electric guitar, the body is rigidly carried by the guitar, and the guitar is operatively connected to the electrical amplifying and signal processing system without use of a loose interconnection cable. The amplifier is provided with an output jack, into which headphones are plugged to receive amplified signals from the guitar. By eliminating the conventional interconnection cable, the amplifier of the present invention can be used by musicians with increased flexibility and greater freedom of movement.

  11. Highly Doped Phosphate Glass Fibers for Compact Lasers and Amplifiers: A Review

    Directory of Open Access Journals (Sweden)

    Nadia Giovanna Boetti

    2017-12-01

    Full Text Available In recent years, the exploitation of compact laser sources and amplifiers in fiber form has found extensive applications in industrial and scientific fields. The fiber format offers compactness, high beam quality through single-mode regime and excellent heat dissipation, thus leading to high laser reliability and long-term stability. The realization of devices based on this technology requires an active medium with high optical gain over a short length to increase efficiency while mitigating nonlinear optical effects. Multicomponent phosphate glasses meet these requirements thanks to the high solubility of rare-earth ions in their glass matrix, alongside with high emission cross-sections, chemical stability and high optical damage threshold. In this paper, we review recent advances in the field thanks to the combination of highly-doped phosphate glasses and innovative fiber drawing techniques. We also present the main performance achievements and outlook both in continuous wave (CW and pulsed mode regimes.

  12. Amplifier for nuclear spectrometry

    International Nuclear Information System (INIS)

    Suarez Canner, E.

    1996-01-01

    The spectroscopy amplifier model AE-020 is designed to adjust suitable the pulses coming from nuclear radiation detectors. Due to is capacity and specifications, the amplifier can be used together with high and medium resolution spectroscopy system

  13. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based......, and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often...

  14. Wideband and flat-gain amplifier based on high concentration erbium-doped fibres in parallel double-pass configuration

    International Nuclear Information System (INIS)

    Hamida, B A; Cheng, X S; Harun, S W; Naji, A W; Arof, H; Al-Khateeb, W; Khan, S; Ahmad, H

    2012-01-01

    A wideband and flat gain erbium-doped fibre amplifier (EDFA) is demonstrated using a hybrid gain medium of a zirconiabased erbium-doped fibre (Zr-EDF) and a high concentration erbium-doped fibre (EDF). The amplifier has two stages comprising a 2-m-long ZEDF and 9-m-long EDF optimised for C- and L-band operations, respectively, in a double-pass parallel configuration. A chirp fibre Bragg grating (CFBG) is used in both stages to ensure double propagation of the signal and thus to increase the attainable gain in both C- and L-band regions. At an input signal power of 0 dBm, a flat gain of 15 dB is achieved with a gain variation of less than 0.5 dB within a wide wavelength range from 1530 to 1605 nm. The corresponding noise figure varies from 6.2 to 10.8 dB within this wavelength region.

  15. High power communication satellites power systems study

    Science.gov (United States)

    Josloff, Allan T.; Peterson, Jerry R.

    1995-01-01

    This paper discusses a planned study to evaluate the commercial attractiveness of high power communication satellites and assesses the attributes of both conventional photovoltaic and reactor power systems. These high power satellites can play a vital role in assuring availability of universally accessible, wide bandwidth communications, for high definition TV, super computer networks and other services. Satellites are ideally suited to provide the wide bandwidths and data rates required and are unique in the ability to provide services directly to the users. As new or relocated markets arise, satellites offer a flexibility that conventional distribution services cannot match, and it is no longer necessary to be near population centers to take advantage of the telecommunication revolution. The geopolitical implications of these substantially enhanced communications capabilities can be significant.

  16. Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

    Science.gov (United States)

    Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

    2017-06-01

    Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Design of a Front– End Amplifier for the Maximum Power Delivery and Required Noise by HBMO with Support Vector Microstrip Model

    Directory of Open Access Journals (Sweden)

    F. Guneş

    2014-04-01

    Full Text Available Honey Bee Mating Optimization (HBMO is a recent swarm-based optimization algorithm to solve highly nonlinear problems, whose based approach combines the powers of simulated annealing, genetic algorithms, and an effective local search heuristic to search for the best possible solution to the problem under investigation within a reasonable computing time. In this work, the HBMO- based design is carried out for a front-end amplifier subject to be a subunit of a radar system in conjunction with a cost effective 3-D SONNET-based Support Vector Regression Machine (SVRM microstrip model. All the matching microstrip widths, lengths are obtained on a chosen substrate to satisfy the maximum power delivery and the required noise over the required bandwidth of a selected transistor. The proposed HBMO- based design is applied to the design of a typical ultra-wide-band low noise amplifier with NE3512S02 on a substrate of Rogers 4350 for the maximum output power and the noise figure F(f=1dB within the 5-12 GHz using the T- type of microstrip matching circuits. Furthermore, the effectiveness and efficiency of the proposed HBMO based design are manifested by comparing it with the Genetic Algorithm (GA, Particle Swarm Optimization (PSO and the simple HBMO based designs.

  18. High Power Orbit Transfer Vehicle

    National Research Council Canada - National Science Library

    Gulczinski, Frank

    2003-01-01

    ... from Virginia Tech University and Aerophysics, Inc. to examine propulsion requirements for a high-power orbit transfer vehicle using thin-film voltaic solar array technologies under development by the Space Vehicles Directorate (dubbed PowerSail...

  19. High speed all optical logic gates based on quantum dot semiconductor optical amplifiers.

    Science.gov (United States)

    Ma, Shaozhen; Chen, Zhe; Sun, Hongzhi; Dutta, Niloy K

    2010-03-29

    A scheme to realize all-optical Boolean logic functions AND, XOR and NOT using semiconductor optical amplifiers with quantum-dot active layers is studied. nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations scheme. Results show with QD excited state and wetting layer serving as dual-reservoir of carriers, as well as the ultra fast carrier relaxation of the QD device, this scheme is suitable for high speed Boolean logic operations. Logic operation can be carried out up to speed of 250 Gb/s.

  20. Instrumentation amplifier implements second-order active low-pass filter with high gain factor

    International Nuclear Information System (INIS)

    Blomqvist, Kim H; Eskelinen, Pekka; Sepponen, Raimo E

    2011-01-01

    A single-ended second-order active low-pass filter can simultaneously provide high gain factor and dc voltage subtraction. This makes it possible to reduce the number of components and signal processing stages needed in an application where small voltage changes are measured on the top of large dc voltage masked by a large amplitude oscillating carrier. The filter described in this paper is constructed from a conventional 3-op-amp instrumentation amplifier and five passive circuit elements. (technical design note)

  1. A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes

    International Nuclear Information System (INIS)

    Green, James E; David, John P R; Tozer, Richard C

    2012-01-01

    This paper reports a novel and versatile system for measuring excess noise and multiplication in avalanche photodiodes (APDs), using a bipolar junction transistor based transimpedance amplifier front-end and based on phase-sensitive detection, which permits accurate measurement in the presence of a high dark current. The system can reliably measure the excess noise factor of devices with capacitance up to 5 nF. This system has been used to measure thin, large area Si pin APDs and the resulting data are in good agreement with measurements of the same devices obtained from a different noise measurement system which will be reported separately. (paper)

  2. Summary of the 3rd workshop on high power RF-systems for accelerators

    International Nuclear Information System (INIS)

    Sigg, P.K.

    2005-01-01

    The aim of this workshop was to bring together experts from the field of CW and high average power RF systems. The focus was on operational and reliability issues of high-power amplifiers using klystrons and tubes, large power supplies; as well as cavity design and low-level RF and feedback control systems. All these devices are used in synchrotron radiation facilities, high power linacs and collider rings, and cyclotrons. Furthermore, new technologies and their applications were introduced, amongst other: high power solid state amplifiers, IOT amplifiers, and high voltage power supplies employing solid state controllers/crowbars. Numerical methods for complete rf-field modeling of complex RF structures like cyclotrons were presented, as well as integrated RF-cavity designs (electro-magnetic fields and mechanical structure), using numerical methods. (author)

  3. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...

  4. Multicanonical evaluation of the tails of the probability density function of semiconductor optical amplifier output power fluctuations

    DEFF Research Database (Denmark)

    Tromborg, Bjarne; Reimer, Michael; Yevick, David

    2010-01-01

    This paper presents a multicanonical Monte Carlo method for simulating the tails of a pdf distribution of the filtered output power from a semiconductor optical amplifier down to values of the order of 10−40. The influence of memory effects on the pdf is examined in order to demonstrate the manner...... in which the calculated pdf approaches the true pdf with increasing integration time. The simulated pdf is shown to be in good agreement with a second order analytic expression for the pdf....

  5. Bandwidth tunable amplifier for recording biopotential signals.

    Science.gov (United States)

    Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

    2010-01-01

    This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

  6. A high-flux entanglement source based on a doubly resonant optical parametric amplifier

    International Nuclear Information System (INIS)

    Kuklewicz, Christopher E; Keskiner, Eser; Wong, Franco N C; Shapiro, Jeffrey H

    2002-01-01

    A 532 nm pumped type-II phase-matched, doubly resonant KTP optical parametric amplifier (OPA) was operated near frequency degeneracy to yield an inferred downconverted photon pair production rate of 1.7x10 6 s -1 at a pump power of 100 μW. The OPA output consisted of three components: narrowband doubly resonant mode pairs; narrowband singly resonant mode pairs for which either the signal or idler was resonant with the cavity and broadband nonresonant mode pairs. Under frequency-degenerate operation, the broadband nonresonant mode pairs were polarization triplet states. We observed quantum interference between the orthogonally polarized photons of the triplet states when they were analysed with a polarizer set at 45 deg. relative to the OPA's output polarizations, leading to reduced coincidence counts

  7. Optimization of E r-density profile for efficient pumping and high signal gain in Erbium-doped fiber amplifiers

    International Nuclear Information System (INIS)

    Arzi, E.; Hassani, A.; Esmaili Seraji, F.

    2000-01-01

    Recently, the Erbium-Doped Fiber Amplifier has been shown to have a great potentiality in Fiber-Optics Communication. A model is suggested for calculating the E r-density profile, using the propagation and rate equations of a homogeneous two-level laser medium in Erbium-Doped Fiber Amplifier, such that efficient pumping and high signal gain is achieved for different fiber waveguide structure. The result of this numerical calculation shows that the gain, compared with the gain of the existing Erbium-Doped Fiber Amplifier, is higher by a factor of 3.5. This model is applicable in all active waveguides and any other dopant as well

  8. High power excimer laser

    International Nuclear Information System (INIS)

    Oesterlin, P.; Muckenheim, W.; Basting, D.

    1988-01-01

    Excimer lasers emitting more than 200 W output power are not commercially available. A significant increase requires new technological efforts with respect to both the gas circulation and the discharge system. The authors report how a research project has yielded a laser which emits 0.5 kW at 308 nm when being UV preionized and operated at a repetition rate of 300 Hz. The laser, which is capable of operating at 500 Hz, can be equipped with an x-ray preionization module. After completing this project 1 kW output power will be available

  9. A High Gain-Bandwidth Product Distributed Transimpedance Amplifier IC for High-Speed Optical Transmission Using Low-Cost GaAs Technology.

    OpenAIRE

    Giannini, F.; Limiti, E.; Orengo, G.; Serino, A.; De Dominicis, M.

    2002-01-01

    This paper reports a distributed baseband transimpedance amplifier for optical links up to 10 Gb/s. The amplifier operates as a baseband amplifier with a transimpedance gain of 48 dB Ω and a DC-to-9 GHz bandwidth. Some innovative design techniques to improve gain-bandwidth performance at low and high frequency with an available low-cost GaAs MESFET technology have been developed.

  10. Coupling amplified DNA from flow-sorted chromosomes to high-density SNP mapping in barley

    Directory of Open Access Journals (Sweden)

    Bartoš Jan

    2008-06-01

    Full Text Available Abstract Background Flow cytometry facilitates sorting of single chromosomes and chromosome arms which can be used for targeted genome analysis. However, the recovery of microgram amounts of DNA needed for some assays requires sorting of millions of chromosomes which is laborious and time consuming. Yet, many genomic applications such as development of genetic maps or physical mapping do not require large DNA fragments. In such cases time-consuming de novo sorting can be minimized by utilizing whole-genome amplification. Results Here we report a protocol optimized in barley including amplification of DNA from only ten thousand chromosomes, which can be isolated in less than one hour. Flow-sorted chromosomes were treated with proteinase K and amplified using Phi29 multiple displacement amplification (MDA. Overnight amplification in a 20-microlitre reaction produced 3.7 – 5.7 micrograms DNA with a majority of products between 5 and 30 kb. To determine the purity of sorted fractions and potential amplification bias we used quantitative PCR for specific genes on each chromosome. To extend the analysis to a whole genome level we performed an oligonucleotide pool assay (OPA for interrogation of 1524 loci, of which 1153 loci had known genetic map positions. Analysis of unamplified genomic DNA of barley cv. Akcent using this OPA resulted in 1426 markers with present calls. Comparison with three replicates of amplified genomic DNA revealed >99% concordance. DNA samples from amplified chromosome 1H and a fraction containing chromosomes 2H – 7H were examined. In addition to loci with known map positions, 349 loci with unknown map positions were included. Based on this analysis 40 new loci were mapped to 1H. Conclusion The results indicate a significant potential of using this approach for physical mapping. Moreover, the study showed that multiple displacement amplification of flow-sorted chromosomes is highly efficient and representative which

  11. High average power supercontinuum sources

    Indian Academy of Sciences (India)

    The physical mechanisms and basic experimental techniques for the creation of high average spectral power supercontinuum sources is briefly reviewed. We focus on the use of high-power ytterbium-doped fibre lasers as pump sources, and the use of highly nonlinear photonic crystal fibres as the nonlinear medium.

  12. Nonlinear instabilities induced by the F coil power amplifier at FTU: Modeling and control

    International Nuclear Information System (INIS)

    Zaccarian, L.; Boncagni, L.; Cascone, D.; Centioli, C.; Cerino, S.; Gravanti, F.; Iannone, F.; Mecocci, F.; Pangione, L.; Podda, S.; Vitale, V.; Vitelli, R.

    2009-01-01

    In this paper we focus on the instabilities caused by the nonlinear behavior of the F coil current amplifier at FTU. This behavior induces closed-loop instability of the horizontal position stabilizing loop whenever the requested current is below the circulating current level. In the paper we first illustrate a modeling phase where nonlinear dynamics are derived and identified to reproduce the open-loop responses measured by the F coil current amplifier. The derived model is shown to successfully reproduce the experimental behavior by direct comparison with experimental data. Based on this dynamic model, we then reproduce the closed-loop scenario of the experiment and show that the proposed nonlinear model successfully reproduces the nonlinear instabilities experienced in the experimental sessions. Given the simulation setup, we next propose a nonlinear control solution to this instability problem. The proposed solution is shown to recover stability in closed-loop simulations. Experimental tests are scheduled for the next experimental campaign after the FTU restart.

  13. Recognition of Y Fragment Deletion by Genotyping Graphs after Amplified by PowerPlex® 21 Detection Kit.

    Science.gov (United States)

    Wang, S C; Ding, M M; Wei, X L; Zhang, T; Yao, F

    2016-06-01

    To recognize the possibility of Y fragment deletion of Amelogenin gene intuitively and simply according to the genotyping graphs. By calculating the ratio of total peak height of genotyping graphs, the statistics of equilibrium distribution between Amelogenin and D3S1358 loci, Amelogenin X-gene and Amelogenin Y-gene, and different alleles of D3S1358 loci from 1 968 individuals was analyzed after amplified by PowerPlex ® 21 detection kit. Sum of peak height of Amelogenin X allele was not less than 60% that of D3S1358 loci alleles in 90.8% female samples, and sum of peak height of Amelogenin X allele was not higher than 70% that of D3S1358 loci alleles in 94.9% male samples. The result of genotyping after amplified by PowerPlex ® 21 detection kit shows that the possibility of Y fragment deletion should be considered when only Amelogenin X-gene of Amelogenin is detected and the peak height of Amelogenin X-gene is not higher than 70% of the total peak height of D3S1358 loci. Copyright© by the Editorial Department of Journal of Forensic Medicine

  14. An experimental analysis of the waveguide modes in a high-gain free-electron laser amplifier

    International Nuclear Information System (INIS)

    Anderson, B.R.

    1989-01-01

    The presence, growth, and interaction of transverse waveguide modes in high-gain free-electron laser (FEL) amplifiers has been observed and studied. Using the Electron Laser Facility at Lawrence Livermore National Laboratory, a 3 MeV, 800 A electron beam generated by the Experimental Test Accelerator was injected into a planar wiggler. Power was then extracted and measured in the fundamental (TE 01 ) an higher-order modes (Te 21 and TM 21 ) under various sets of operating conditions. Horizontal focusing through the wiggler was provided by external quadrupole magnets. There was no axial guide field. The input microwave signal for amplification was generated by a 100 kW magnetron operating at 34.6 Ghz. Power measurements were taken for both flat and tapered wigglers, for two sizes of waveguide, and for both flat and tapered wigglers, for two sizes of waveguide, and for both fundamental and higher mode injection. Mode content was determined by sampling the radiated signal at specific points in the radiation patter. For the flat wiggler and with the large waveguide (2.9 cm x 9.8 cm) the power in the higher modes was comparable to power in the fundamental. both exhibited gains greater than 30 dB/m prior to saturation and both reached powers in excess of 80 MW. Choice of injection mode had little effect on the operation of the system. Operation with the smaller guide (WR-229) provided much better mode selectivity. The fundamental mode continued to show optimum gain in excess of 30 dB/m while the higher-mode gain was of order 20 dB/m. As expected, power output increased significantly with the tapered wigglers. The relative mode content depended on the specific taper used

  15. Fiber Based Optical Amplifier for High Energy Laser Pulses Final Report CRADA No. TC02100.0

    Energy Technology Data Exchange (ETDEWEB)

    Messerly, M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Cunningham, P. [Boeing Company, Springfield, VA (United States)

    2017-09-06

    This was a collaborative effort between Lawrence Livermore National Security, LLC (formerly The Regents of the University of California)/Lawrence Livermore National Laboratory (LLNL), and The Boeing Company to develop an optical fiber-based laser amplifier capable of producing and sustaining very high-energy, nanosecond-scale optical pulses. The overall technical objective of this CRADA was to research, design, and develop an optical fiber-based amplifier that would meet specific metrics.

  16. Synchronization and chaos in spin-transfer-torque nano-oscillators coupled via a high-speed operational amplifier

    International Nuclear Information System (INIS)

    Sanid, C; Murugesh, S

    2014-01-01

    We propose a system of two coupled spin-torque nano-oscillators (STNOs), one driver and another response, and demonstrate using numerical studies the synchronization of the response system to the frequency of the driver system. To this end we use a high-speed operational amplifier in the form of a voltage follower, which essentially isolates the drive system from the response system. We find the occurrence of 1 : 1 as well as 2 : 1 synchronization in the system, wherein the oscillators show limit cycle dynamics. An increase in power output is noticed when the two oscillators are locked in 1 : 1 synchronization. Moreover in the crossover region between these two synchronization dynamics we show the existence of chaotic dynamics in the slave system. The coupled dynamics under periodic forcing, using a small ac input current in addition to that of the dc part, is also studied. The slave oscillator is seen to retain its qualitative identity in the parameter space in spite of being fed in, at times, a chaotic signal. Such electrically coupled STNOs will be highly useful in fabricating commercial spin-valve oscillators with high power output, when integrated with other spintronic devices. (paper)

  17. Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

    Directory of Open Access Journals (Sweden)

    Vittorio Camarchia

    2014-09-01

    Full Text Available This paper presents the progress of monolithic technology for microwaveapplication, focusing on gallium nitride technology advances in the realization of integratedpower amplifiers. Three design examples, developed for microwave backhaul radios, areshown. The first design is a 7 GHz Doherty developed with a research foundry, while thesecond and the third are a 7 GHz Doherty and a 7–15 GHz dual-band combined poweramplifiers, both based on a commercial foundry process. The employed architectures, themain design steps and the pros and cons of using gallium nitride technology are highlighted.The measured performance demonstrates the potentialities of the employed technology, andthe progress in the accuracy, reliability and performance of the process.

  18. High energy, high average power solid state green or UV laser

    Science.gov (United States)

    Hackel, Lloyd A.; Norton, Mary; Dane, C. Brent

    2004-03-02

    A system for producing a green or UV output beam for illuminating a large area with relatively high beam fluence. A Nd:glass laser produces a near-infrared output by means of an oscillator that generates a high quality but low power output and then multi-pass through and amplification in a zig-zag slab amplifier and wavefront correction in a phase conjugator at the midway point of the multi-pass amplification. The green or UV output is generated by means of conversion crystals that follow final propagation through the zig-zag slab amplifier.

  19. Fundamentals of RF and microwave transistor amplifiers

    CERN Document Server

    Bahl, Inder J

    2009-01-01

    A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

  20. High-powered manoeuvres

    CERN Multimedia

    Anaïs Schaeffer

    2013-01-01

    This week, CERN received the latest new transformers for the SPS. Stored in pairs in 24-tonne steel containers, these transformers will replace the old models, which have been in place since 1981.     The transformers arrive at SPS's access point 4 (BA 4). During LS1, the TE-EPC Group will be replacing all of the transformers for the main converters of the SPS. This renewal campaign is being carried out as part of the accelerator consolidation programme, which began at the start of April and will come to an end in November. It involves 80 transformers: 64 with a power of 2.6 megavolt-amperes (MVA) for the dipole magnets, and 16 with 1.9 MVA for the quadrupoles. These new transformers were manufactured by an Italian company and are being installed outside the six access points of the SPS by the EN-HE Group, using CERN's 220-tonne crane. They will contribute to the upgrade of the SPS, which should thus continue to operate as the injector for the LHC until 2040....

  1. S-Band AlGaN/GaN Power Amplifier MMIC with over 20 Watt Output Power

    NARCIS (Netherlands)

    Heijningen, M. van; Visser, G.C.; Wuerfl, J.; Vliet, F.E. van

    2008-01-01

    This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz. An output

  2. S-Band AlGaN/GaN power amplifier MMIC with over 20 Watt output power

    NARCIS (Netherlands)

    van Heijningen, M; Visser, G.C.; Wurfl, J.; van Vliet, Frank Edward

    2008-01-01

    Abstract This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz.

  3. Development of high-power dye laser chain

    Science.gov (United States)

    Konagai, Chikara; Kimura, Hironobu; Fukasawa, Teruichiro; Seki, Eiji; Abe, Motohisa; Mori, Hideo

    2000-01-01

    Copper vapor laser (CVL) pumped dye laser (DL) system, both in a master oscillator power amplifier (MOPA) configuration, has been developed for Atomic Vapor Isotope Separation program in Japan. Dye laser output power of about 500 W has been proved in long-term operations over 200 hours. High power fiber optic delivery system is utilized in order to efficiently transport kilowatt level CVL beams to the DL MOPA. Single model CVL pumped DL oscillator has been developed and worked for 200 hours within +/- 0.1 pm wavelength stability. Phase modulator for spreading spectrum to the linewidth of hyperfine structure has been developed and demonstrated.

  4. Highly pH-responsive sensor based on amplified spontaneous emission coupled to colorimetry.

    Science.gov (United States)

    Zhang, Qi; Castro Smirnov, Jose R; Xia, Ruidong; Pedrosa, Jose M; Rodriguez, Isabel; Cabanillas-Gonzalez, Juan; Huang, Wei

    2017-04-07

    We demonstrated a simple, directly-readable approach for high resolution pH sensing. The method was based on sharp changes in Amplified Spontaneous Emission (ASE) of a Stilbene 420 (ST) laser dye triggered by the pH-dependent absorption of Bromocresol Green (BG). The ASE threshold of BG:ST solution mixtures exhibited a strong dependence on BG absorption, which was drastically changed by the variations of the pH of BG solution. As a result, ASE on-off or off-on was observed with different pH levels achieved by ammonia doping. By changing the concentration of the BG solution and the BG:ST blend ratio, this approach allowed to detect pH changes with a sensitivity down to 0.05 in the 10-11 pH range.

  5. Autonomously managed high power systems

    International Nuclear Information System (INIS)

    Weeks, D.J.; Bechtel, R.T.

    1985-01-01

    The need for autonomous power management capabilities will increase as the power levels of spacecraft increase into the multi-100 kW range. The quantity of labor intensive ground and crew support consumed by the 9 kW Skylab cannot be afforded in support of a 75-300 kW Space Station or high power earth orbital and interplanetary spacecraft. Marshall Space Flight Center is managing a program to develop necessary technologies for high power system autonomous management. To date a reference electrical power system and automation approaches have been defined. A test facility for evaluation and verification of management algorithms and hardware has been designed with the first of the three power channel capability nearing completion

  6. High voltage power supplies for INDUS-2 RF system

    International Nuclear Information System (INIS)

    Badapanda, M.K.; Hannurkar, P.R.

    2003-01-01

    The RF system of Indus-2 employs klystron amplifiers operating at 505.812 MHz. A precession controlled high voltage DC supply of appropriate rating is needed for each klystron amplifier, as its bias supply. Since internal flashover and arcing are common with the operation of these klystrons and stored energies beyond particular limit inside its bias power supply is detrimental to this device, a properly designed crowbar is incorporated between each klystron and its power supply. This crowbar bypass these stored energies and helps protecting klystron under any of these unfavorable conditions. In either case, power supply sees a near short circuit across its load. So, its power circuit is designed to reduce the fault current level and its various components are also designed to withstand these fault currents, as and when it appears. Finally, operation of these high voltage power supplies (HVPS) generates lot of harmonics on the source side, which distort the input waveform substantially and reduces the input power factor also. Source multiplication between two power supplies are planned to improve upon above parameters and suitable detuned line filters are incorporated to keep the input voltage total harmonics distortion (THD) below 5 % and input power factor (IFF) near unity. (author)

  7. Amplified fluorescent aptasensor through catalytic recycling for highly sensitive detection of ochratoxin A.

    Science.gov (United States)

    Wei, Yin; Zhang, Ji; Wang, Xu; Duan, Yixiang

    2015-03-15

    This paper describes a novel approach utilizing nano-graphite-aptamer hybrid and DNase I for the amplified detection of ochratoxin A (OTA) for the first time. Nano-graphite can effectively quench the fluorescence of carboxyfluorescein (FAM) labeled OTA specific aptamer due to their strong π-π; stacking interactions; while upon OTA addition, it will bind with aptamer to fold into an OTA-aptamerG-quadruplex structure, which does not adsorb on the surface of nano-graphite and thus retains the dye fluorescence. Meanwhile, the G-quadruplex structure can be cleaved by DNase I, and in such case OTA is delivered from the complex. The released OTA then binds other FAM-labeled aptamers on the nano-graphite surface, and touches off another target recycling, resulting in the successive release of dye-labeled aptamers from the nano-graphite, which leads to significant amplification of the signal. Under the optimized conditions, the present amplified sensing system exhibits high sensitivity toward OTA with a limit of detection of 20nM (practical measurement), which is about 100-fold higher than that of traditional unamplified homogeneous assay. Our developed method also showed high selectivity against other interference molecules and can be applied for the detection of OTA in real red wine samples. The proposed assay is simple, cost-effective, and might open a door for the development of new assays for other biomolecules. This aptasensor is of great practical importance in food safety and could be widely extended to the detection of other toxins by replacing the sequence of the recognition aptamer. Copyright © 2014 Elsevier B.V. All rights reserved.

  8. Robust Power Allocation for Multi-Carrier Amplify-and-Forward Relaying Systems

    KAUST Repository

    Rao, Anlei; Nisar, M. Danish; Alouini, Mohamed-Slim

    2012-01-01

    It has been shown that adaptive power allocation can provide a substantial performance gain in wireless communication systems when perfect channel state information (CSI) is available at the transmitter. However when only imperfect CSI is available

  9. Studies of high repetition rate laser-produced plasma soft-X-ray amplifiers

    International Nuclear Information System (INIS)

    Cassou, K.

    2006-12-01

    The progress made as well on the Ti:Sa laser system, as in the control and the knowledge of laser produced X-UV sources allowed the construction of a X-UV laser station dedicated to the applications. My thesis work falls under the development of this station and more particularly on the characterization of a X-UV laser plasma amplifier. The experimental study relates to the coupling improvement of the pump infra-red laser with plasma within the framework of the transient collisional X-UV laser generation. These X-UV lasers are generated in a plasma formed by the interaction of a solid target and a laser pulse of approximately 500 ps duration, followed by a second infra-red laser pulse known as of pump (about 5 ps) impinging on the target in grazing incidence. For the first time, a complete parametric study was undertaken on the influence of the grazing angle on the pumping of the amplifying medium. One of the results was to reach very high peak brightness about 10 28 ph/s/mm 2 /mrad 2 /(0.1%bandwidth), which compares well with the free-electron laser brightness. Moreover, we modified then used a new two-dimensional hydrodynamic code with adaptive mesh refinement in order to understand the influence of the space-time properties of the infra-red laser on the formation and the evolution of the amplifying plasma. Our modeling highlighted the interest to use a super Gaussian transverse profile for the line focus leading to an increase in a factor two of the gain region size and a reduction of the electron density gradient by three orders of magnitude. These improvements should strongly increase the energy contained in X-UV laser beam. We thus used X-UV laser to study the appearance of transient defects produced by a laser IR on a beam-splitter rear side. We also began research on the mechanisms of DNA damage induced by a very intense X-UV radiation. (author)

  10. Tunable High Harmonic Generation driven by a Visible Optical Parametric Amplifier

    Directory of Open Access Journals (Sweden)

    Keathley P.

    2013-03-01

    Full Text Available We studied high-harmonic generation (HHG in Ar, Ne and He gas jets using a broadly tunable, high-energy optical parametric amplifier (OPA in the visible wavelength range. We optimized the noncollinear OPA to deliver tunable, femtosecond pulses with 200-500 μJ energy at 1-kHz repetition rate with excellent spatiotemporal properties, suitable for HHG experiments. By tuning the central wavelength of the OPA while keeping energy, duration and beam size constant, we experimentally studied the scaling law of conversion efficiency and cut-off energy with the driver wavelength in argon and helium respectively. Our measurements show a λ−5.9±0.9 wavelength dependence of the conversion efficiency and a λ1.7±0.2 dependence of the HHG cut-off photon energy over the full visible range in agreement with previous experiments of near- and mid-IR wavelengths. By tuning the central wavelength of the driver source and changing the gas, the high order harmonic spectra in the extreme ultraviolet cover the full range of photon energy between ~25 eV and ~100 eV. Due to the high coherence intrinsic in HHG, as well as the broad and continuous tunability in the extreme UV range, a high energy, high repetition rate version of this source might be an ideal seed for free electron lasers.

  11. Deep UV light generation by a fiber/bulk hybrid amplifier at 199 nm

    International Nuclear Information System (INIS)

    Urata, Yoshiharu; Shinozaki, Tatsuya; Wada, Yoshio; Kaneda, Yushi; Wada, Satoshi; Imai, Shinichi

    2009-01-01

    A high-pulse-repetition-frequency (PRF) pulsed light source in the deep ultraviolet region has been realized by a multiple wavelength conversion technique using a hybrid fiber/bulk amplifier system. Output of 199 nm with a power of 50 mW was achieved at 2.4 MHz PRF. The 1 μm amplifier consisted of a Yb-doped fiber amplifier and a Nd-doped YVO4 amplifier. A 1.5 μm fiber master-oscillator power amplifier was employed as the other fundamental source. The amplifiers exhibited good amplification properties in pulse energy, polarization extinction ratio, and spectrum for nonlinear wavelength conversion

  12. New configurations for short-pulses high power solid-state lasers: conception and realization of highly doped waveguide amplifiers/lasers grown by liquid phase epitaxy and demonstration of Y2SiO5: Yb and Lu2SiO5: Yb femtosecond lasers

    International Nuclear Information System (INIS)

    Thibault, F.

    2006-04-01

    Yb-doped yttrium and lutetium ortho-silicates, Y 2 SiO 5 :Yb and Lu 2 SiO 5 :Yb respectively, exhibit spectroscopic properties favorable to an efficient laser operation in both high power cw and femtosecond regime. Their first diode-pumped femtosecond operation demonstration lead to exceptional performances in terms of output power and efficiency. In order to realize compact and efficient solid-state laser devices using those materials, we chose a configuration with an Yb-doped medium planar waveguide geometry, grown by liquid phase epitaxy, face-pumped by a single laser diode bar. The growth of highly doped Y 2 SiO 5 :Yb layers, within a large range of compositions and thicknesses, was demonstrated. The refractive index increase due to the substitution of the various dopants is analyzed. The layers spectroscopic properties are similar to the bulk ones, with an noticeably higher crystalline quality. The Yb ion lifetime evolution with respect to its doping shows up a particularly low decrease, proof of a low concentration of extrinsic quenching centers. The covered YSO:24%Yb waveguides exhibit lower than 0.3 dB/cm propagation losses, and provided up to 2.9 dB/cm net amplification at 1082 nm with a single mode output. The realization of the first diode-pumped monolithic cw waveguide lasers was also demonstrated. For a 4% output coupler, they provided up to 340 mW at 1082 nm with a 14% slope efficiency. (author)

  13. High-power picosecond pulse delivery through hollow core photonic band gap fibers

    DEFF Research Database (Denmark)

    Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian

    2016-01-01

    We demonstrated robust and bend insensitive fiber delivery of high power laser with diffraction limited beam quality for two different kinds of hollow core band gap fibers. The light source for this experiment consists of ytterbium-doped double clad fiber aeroGAIN-ROD-PM85 in a high power amplifier...

  14. EURISOL High Power Targets

    CERN Document Server

    Kadi, Y; Lindroos, M; Ridikas, D; Stora, T; Tecchio, L; CERN. Geneva. BE Department

    2009-01-01

    Modern Nuclear Physics requires access to higher yields of rare isotopes, that relies on further development of the In-flight and Isotope Separation On-Line (ISOL) production methods. The limits of the In-Flight method will be applied via the next generation facilities FAIR in Germany, RIKEN in Japan and RIBF in the USA. The ISOL method will be explored at facilities including ISAC-TRIUMF in Canada, SPIRAL-2 in France, SPES in Italy, ISOLDE at CERN and eventually at the very ambitious multi-MW EURISOL facility. ISOL and in-flight facilities are complementary entities. While in-flight facilities excel in the production of very short lived radioisotopes independently of their chemical nature, ISOL facilities provide high Radioisotope Beam (RIB) intensities and excellent beam quality for 70 elements. Both production schemes are opening vast and rich fields of nuclear physics research. In this article we will introduce the targets planned for the EURISOL facility and highlight some of the technical and safety cha...

  15. Applications of high power microwaves

    International Nuclear Information System (INIS)

    Benford, J.; Swegle, J.

    1993-01-01

    The authors address a number of applications for HPM technology. There is a strong symbiotic relationship between a developing technology and its emerging applications. New technologies can generate new applications. Conversely, applications can demand development of new technological capability. High-power microwave generating systems come with size and weight penalties and problems associated with the x-radiation and collection of the electron beam. Acceptance of these difficulties requires the identification of a set of applications for which high-power operation is either demanded or results in significant improvements in peRFormance. The authors identify the following applications, and discuss their requirements and operational issues: (1) High-energy RF acceleration; (2) Atmospheric modification (both to produce artificial ionospheric mirrors for radio waves and to save the ozone layer); (3) Radar; (4) Electronic warfare; and (5) Laser pumping. In addition, they discuss several applications requiring high average power than border on HPM, power beaming and plasma heating

  16. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  17. Investigation of crosstalk in self oscillating switch mode audio power amplifier

    DEFF Research Database (Denmark)

    Birch, Thomas Haagen; Ploug, Rasmus Overgaard; Iversen, Niels Elkjær

    2012-01-01

    channel self oscillating switch mode power amplier (class D). A step by step reduction of elements in an amplier built for this task, is used for methodically determining the actual presence and origins of crosstalk. The investigation shows that the crosstalk is caused by couplings in the self oscillating......Self oscillating switch mode power ampliers are known to be susceptible to interchannel disturbances also known as crosstalk. This phenomenon has a signicant impact on the performance of an amplier of this type. The goal of this paper is to investigate the presence and origins of crosstalk in a two...

  18. On the jamming power allocation for secure amplify-and-forward relaying via cooperative jamming

    KAUST Repository

    Park, Kihong

    2013-09-01

    In this paper, we investigate secure communications in two-hop wireless relaying networks with one eavesdropper. To prevent the eavesdropper from intercepting the source message, the destination sends an intended jamming noise to the relay, which is referred to as cooperative jamming. This jamming noise helps protecting the source message from being captured reliably at the eavesdropper, while the destination cancels its self-intended noise. According to the channel information available at the destination, we derive three jamming power allocation strategies to minimize the outage probability of the secrecy rate. In addition, we derive analytic results quantifying the jamming power consumption of the proposed allocation methods. © 1983-2012 IEEE.

  19. High LET Radiation Amplifies Centrosome Overduplication Through a Pathway of γ-Tubulin Monoubiquitination

    Energy Technology Data Exchange (ETDEWEB)

    Shimada, Mikio [Department of Genome Repair Dynamics, Radiation Biology Center, Kyoto University, Kyoto (Japan); Hirayama, Ryoichi [Research Center for Charged Particle Therapy, National Institute of Radiological Sciences, Chiba (Japan); Komatsu, Kenshi, E-mail: komatsu@house.rbc.kyoto-u.ac.jp [Department of Genome Repair Dynamics, Radiation Biology Center, Kyoto University, Kyoto (Japan)

    2013-06-01

    Purpose: Radiation induces centrosome overduplication, leading to mitotic catastrophe and tumorigenesis. Because mitotic catastrophe is one of the major tumor cell killing factors in high linear energy transfer (LET) radiation therapy and long-term survivors from such treatment have a potential risk of secondary tumors, we investigated LET dependence of radiation-induced centrosome overduplication and the underlying mechanism. Methods and Materials: Carbon and iron ion beams (13-200 keV/μm) and γ-rays (0.5 keV/μm) were used as radiation sources. To count centrosomes after IR exposure, human U2OS and mouse NIH3T3 cells were immunostained with antibodies of γ-tubulin and centrin 2. Similarly, Nbs1-, Brca1-, Ku70-, and DNA-PKcs-deficient mouse cells and their counterpart wild-type cells were used for measurement of centrosome overduplication. Results: The number of excess centrosome-containing cells at interphase and the resulting multipolar spindle at mitosis were amplified with increased LET, reaching a maximum level of 100 keV/μm, followed by sharp decrease in frequency. Interestingly, Ku70 and DNA-PKcs deficiencies marginally affected the induction of centrosome overduplication, whereas the cell killings were significantly enhanced. This was in contrast to observation that high LET radiation significantly enhanced frequencies of centrosome overduplication in Nbs1- and Brca1-deficient cells. Because NBS1/BRCA1 is implicated in monoubiquitination of γ-tubulin, we subsequently tested whether it is affected by high LET radiation. As a result, monoubiquitination of γ-tubulin was abolished in 48 to 72 hours after exposure to high LET radiation, although γ-ray exposure slightly decreased it 48 hours postirradiation and was restored to a normal level at 72 hours. Conclusions: High LET radiation significantly reduces NBS1/BRCA1-mediated monoubiquitination of γ-tubulin and amplifies centrosome overduplication with a peak at 100 keV/μm. In contrast, Ku70 and DNA

  20. Dual-Polarized Antenna Arrays with CMOS Power Amplifiers for SiP Integration at W-Band

    Science.gov (United States)

    Giese, Malte; Vehring, Sönke; Böck, Georg; Jacob, Arne F.

    2017-09-01

    This paper presents requirements and front-end solutions for low-cost communication systems with data rates of 100 Gbit/s. Link budget analyses in different mass-market applications are conducted for that purpose. It proposes an implementation of the front-end as an active antenna array with support for beam steering and polarization multiplexing over the full W-band. The critical system components are investigated and presented. This applies to a transformer coupled power amplifier (PA) in 40 nm bulk CMOS. It shows saturated output power of more than 10 dBm and power-added-efficiency of more than 10 % over the full W-band. Furthermore, the performance of microstrip-to-waveguide transitions is shown exemplarily as an important part of the active antenna as it interfaces active circuitry and antenna in a polymer-and-metal process. The transition test design shows less than 0.9 dB insertion loss and more than 12 dB return loss for the differential transition over the full W-band.