Combining surface enhanced Raman scattering (SERS) and high-performance thin-layer chromatography (HPTLC)

Science.gov (United States)

Koglin, E.

A new method for preparing SERS active surfaces using silver colloidal spheres deposited on HPTLC plates, used for thin-layer chromatography, is discussed in detail. The sensitivity of these activated HPTLC plates is so high that in-situ vibrational investigations of chromatogram spots are possible at the nanogram level. The HPTLC/SERS spectra of purine, benzoic acid and 1-nitro-pyrene adsorbed on silver colloidal activated silica gel plates are measured in the nanogram region. In addition we also report in this paper on the results of a feasibility study performed to evaluate the analytical potential of micro-Raman spectroscopy (triple monochromator, multichannel detection system) in SERS/HPTLC spot characterization. It permits the acquisition of Raman spectra from HPTLC spots down to 1 μm in size or other forms of microsamples approaching the picogram level in mass.

Method development for Lawsone estimation in Trichup herbal hair powder by high-performance thin layer chromatography

Directory of Open Access Journals (Sweden)

Maunang M Patel

2013-01-01

Full Text Available A simple, specific, accurate, precise and robust high-performance thin-layer chromatographic method has been developed and validated for estimation of Lawsone in Trichup herbal hair powder (coded as a THHP, polyherbal formulation. The chromatographic development was carried out on aluminum plates pre-coated with silica gel 60F 254 and good resolution was achieved with Toluene: Ethyl acetate: Glacial acetic acid (8:1:1 v/v/v as mobile phase. Lawsone detection was carried out densitometrically at 277 nm and obtained retardation factor value was 0.46 ± 0.02. The method was validated with respect to specificity, linearity, accuracy, precision and robustness. The calibration curve was achieved to be linear over a range of 5-60 μg/ml and regression coefficient was obtained 0.998. Accuracy of chromatographic method was evaluated by standard addition method; recovery was obtained 99.25 ± 0.61% . The peak purity of Lawsone was achieved 0.999 r. Relative standard deviation for intraday and inter-day precision was 0.37-0.56% and 0.42-0.55%, respectively. The limit of detection and limit of quantification of the Lawsone were found to be 1.08 μg/m land 3.28 μg/ml, respectively. This result shows that the method was well validated. In the present study, the Lawsone content was found 0.322 ± 0.014% in THHP. This study reveals that the proposed high performance thin layer chromatography method is accurate, fast and cost- effective for routine estimation of Lawsone in polyherbal formulation.

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

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Jaekyun Kim

2015-10-01

Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

Performance of a Polymer Flood with Shear-Thinning Fluid in Heterogeneous Layered Systems with Crossflow

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Kun Sang Lee

2011-08-01

Full Text Available Assessment of the potential of a polymer flood for mobility control requires an accurate model on the viscosities of displacement fluids involved in the process. Because most polymers used in EOR exhibit shear-thinning behavior, the effective viscosity of a polymer solution is a highly nonlinear function of shear rate. A reservoir simulator including the model for the shear-rate dependence of viscosity was used to investigate shear-thinning effects of polymer solution on the performance of the layered reservoir in a five-spot pattern operating under polymer flood followed by waterflood. The model can be used as a quantitative tool to evaluate the comparative studies of different polymer flooding scenarios with respect to shear-rate dependence of fluids’ viscosities. Results of cumulative oil recovery and water-oil ratio are presented for parameters of shear-rate dependencies, permeability heterogeneity, and crossflow. The results of this work have proven the importance of taking non-Newtonian behavior of polymer solution into account for the successful evaluation of polymer flood processes. Horizontal and vertical permeabilities of each layer are shown to impact the predicted performance substantially. In reservoirs with a severe permeability contrast between horizontal layers, decrease in oil recovery and sudden increase in WOR are obtained by the low sweep efficiency and early water breakthrough through highly permeable layer, especially for shear-thinning fluids. An increase in the degree of crossflow resulting from sufficient vertical permeability is responsible for the enhanced sweep of the low permeability layers, which results in increased oil recovery. It was observed that a thinning fluid coefficient would increase injectivity significantly from simulations with various injection rates. A thorough understanding of polymer rheology in the reservoir and accurate numerical modeling are of fundamental importance for the exact estimation

Validated high-performance thin-layer chromatographic (HPTLC method for simultaneous determination of nadifloxacin, mometasone furoate, and miconazole nitrate cream using fractional factorial design

Directory of Open Access Journals (Sweden)

Kalpana G. Patel

2016-07-01

Full Text Available A high-performance thin-layer chromatographic method for simultaneous determination of nadifloxacin, mometasone furoate, and miconazole nitrate was developed and validated as per International Conference on Harmonization guidelines. High-performance thin-layer chromatographic separation was performed on aluminum plates precoated with silica gel 60F254 and methanol:ethyl acetate:toluene: acetonitrile:3M ammonium formate in water (1:2.5:6.0:0.3:0.2, % v/v as optimized mobile phase at detection wavelength of 224 nm. The retardation factor (Rf values for nadifloxacin, mometasone furoate, and miconazole nitrate were 0.23, 0.70, and 0.59, respectively. Percent recoveries in terms of accuracy for the marketed formulation were found to be 98.35–99.76%, 99.36–99.65%, and 99.16–100.25% for nadifloxacin, mometasone furoate, and miconazole nitrate, respectively. The pooled percent relative standard deviation for repeatability and intermediate precision studies was found to be < 2% for three target analytes. The effect of four independent variables, methanol content in total mobile phase, wavelength, chamber saturation time, and solvent front, was evaluated by fractional factorial design for robustness testing. Amongst all four factors, volume of methanol in mobile phase appeared to have a possibly significant effect on retention factor of miconazole nitrate compared with the other two drugs nadifloxacin and mometasone furoate, and therefore it was important to be carefully controlled. In summary, a novel, simple, accurate, reproducible, and robust high-performance thin-layer chromatographic method was developed, which would be of use in quality control of these cream formulations.

Quantitative determination of seven chemical constituents and chemo-type differentiation of chamomiles using high-performance thin-layer chromatography.

Science.gov (United States)

Sagi, Satyanarayanaraju; Avula, Bharathi; Wang, Yan-Hong; Zhao, Jianping; Khan, Ikhlas A

2014-10-01

A simple and rapid high-performance thin-layer chromatographic method was developed for the separation and determination of six flavonoids (rutin, luteolin-7-O-β-glucoside, chamaemeloside, apigenin-7-O-β-glucoside, luteolin, apigenin) and one coumarin, umbelliferone from chamomile plant samples and dietary supplements. The separation was achieved on amino silica stationary phase using dichloromethane/acetonitrile/ethyl formate/glacial acetic acid/formic acid (11:2.5:3:1.25:1.25 v/v/v/v/v) as the mobile phase. The quantitation of each compound was carried out using densitometric reflection/absorption mode at their respective absorbance maxima after postchromatographic derivatization using natural products reagent (1% w/v methanolic solution of diphenylboric acid-β-ethylamino ester). The method was validated for specificity, limits of detection and quantification, precision (intra- and interday) and accuracy. The limits of detection and quantification were found to be in the range from 6-18 and 16-55 ng/band for six flavonoids and one coumarin, respectively. The intra- and interday precision was found to be 90%. The data acquired from high-performance thin-layer chromatography was processed by principal component analysis using XLSTAT statistical software. Application of principal component analysis and agglomerative hierarchial clustering was successfully able to differentiate two chamomiles (German and Roman) and Chrysanthemum. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Performance improvement of organic thin film transistors by using active layer with sandwich structure

Science.gov (United States)

Ni, Yao; Zhou, Jianlin; Kuang, Peng; Lin, Hui; Gan, Ping; Hu, Shengdong; Lin, Zhi

2017-08-01

We report organic thin film transistors (OTFTs) with pentacene/fluorinated copper phthalo-cyanine (F16CuPc)/pentacene (PFP) sandwich configuration as active layers. The sandwich devices not only show hole mobility enhancement but also present a well control about threshold voltage and off-state current. By investigating various characteristics, including current-voltage hysteresis, organic film morphology, capacitance-voltage curve and resistance variation of active layers carefully, it has been found the performance improvement is mainly attributed to the low carrier traps and the higher conductivity of the sandwich active layer due to the additional induced carriers in F16CuPc/pentacene. Therefore, using proper multiple active layer is an effective way to gain high performance OTFTs.

HPTLC-aptastaining - Innovative protein detection system for high-performance thin-layer chromatography

Science.gov (United States)

Morschheuser, Lena; Wessels, Hauke; Pille, Christina; Fischer, Judith; Hünniger, Tim; Fischer, Markus; Paschke-Kratzin, Angelika; Rohn, Sascha

2016-05-01

Protein analysis using high-performance thin-layer chromatography (HPTLC) is not commonly used but can complement traditional electrophoretic and mass spectrometric approaches in a unique way. Due to various detection protocols and possibilities for hyphenation, HPTLC protein analysis is a promising alternative for e.g., investigating posttranslational modifications. This study exemplarily focused on the investigation of lysozyme, an enzyme which is occurring in eggs and technologically added to foods and beverages such as wine. The detection of lysozyme is mandatory, as it might trigger allergenic reactions in sensitive individuals. To underline the advantages of HPTLC in protein analysis, the development of innovative, highly specific staining protocols leads to improved sensitivity for protein detection on HPTLC plates in comparison to universal protein derivatization reagents. This study aimed at developing a detection methodology for HPTLC separated proteins using aptamers. Due to their affinity and specificity towards a wide range of targets, an aptamer based staining procedure on HPTLC (HPTLC-aptastaining) will enable manifold analytical possibilities. Besides the proof of its applicability for the very first time, (i) aptamer-based staining of proteins is applicable on different stationary phase materials and (ii) furthermore, it can be used as an approach for a semi-quantitative estimation of protein concentrations.

Layer-by-layer assembled polyaniline nanofiber/multiwall carbon nanotube thin film electrodes for high-power and high-energy storage applications.

Science.gov (United States)

Hyder, Md Nasim; Lee, Seung Woo; Cebeci, Fevzi Ç; Schmidt, Daniel J; Shao-Horn, Yang; Hammond, Paula T

2011-11-22

Thin film electrodes of polyaniline (PANi) nanofibers and functionalized multiwall carbon nanotubes (MWNTs) are created by layer-by-layer (LbL) assembly for microbatteries or -electrochemical capacitors. Highly stable cationic PANi nanofibers, synthesized from the rapid aqueous phase polymerization of aniline, are assembled with carboxylic acid functionalized MWNT into LbL films. The pH-dependent surface charge of PANi nanofibers and MWNTs allows the system to behave like weak polyelectrolytes with controllable LbL film thickness and morphology by varying the number of bilayers. The LbL-PANi/MWNT films consist of a nanoscale interpenetrating network structure with well developed nanopores that yield excellent electrochemical performance for energy storage applications. These LbL-PANi/MWNT films in lithium cell can store high volumetric capacitance (~238 ± 32 F/cm(3)) and high volumetric capacity (~210 mAh/cm(3)). In addition, rate-dependent galvanostatic tests show LbL-PANi/MWNT films can deliver both high power and high energy density (~220 Wh/L(electrode) at ~100 kW/L(electrode)) and could be promising positive electrode materials for thin film microbatteries or electrochemical capacitors. © 2011 American Chemical Society

Effect-directed analysis via hyphenated high-performance thin-layer chromatography for bioanalytical profiling of sunflower leaves.

Science.gov (United States)

Móricz, Ágnes M; Ott, Péter G; Yüce, Imanuel; Darcsi, András; Béni, Szabolcs; Morlock, Gertrud E

2018-01-19

High-performance thin-layer chromatography (HPTLC) coupled with effect-directed analysis was used for non-targeted screening of sunflower leaf extract for components exhibiting antioxidant, antibacterial and/or cholinesterase enzyme inhibitory effects. The active compounds were characterized by HPTLC-electrospray ionization-high resolution mass spectrometry (ESI-HRMS) and HPTLC-Direct Analysis in Real Time (DART)-MS/MS. The latter ambient ionization technique (less soft than ESI) resulted in oxidation and fragmentation products and characteristic fragment ions. NMR spectroscopy after targeted isolation via preparative normal phase flash chromatography and semi-preparative reversed phase high-performance liquid chromatography supported the identification of two diterpenes to be (-)-kaur-16-en-19-oic acid and 15-α-angeloyloxy-ent-kaur-16-en-19-oic acid. Both compounds found to be multi-potent as they inhibited acetylcholinesterase and butyrylcholinesterase and showed antibacterial effects against Gram-positive Bacillus subtilis and Gram-negative Aliivibrio fischeri bacteria. Kaurenoic acid was also active against the Gram-negative pepper pathogenic Xanthomonas euvesicatoria bacteria. Copyright © 2017 Elsevier B.V. All rights reserved.

Development and validation of High-performance Thin-layer Chromatography Method for Simultaneous Determination of Polyphenolic Compounds in Medicinal Plants.

Science.gov (United States)

Jayachandran Nair, C V; Ahamad, Sayeed; Khan, Washim; Anjum, Varisha; Mathur, Rajani

2017-12-01

Quantitative standardization of plant-based products is challenging albeit essential to maintain their quality. This study aims to develop and validate high-performance thin-layer chromatography (HPTLC) method for the simultaneous determination of rutin (Ru), quercetin (Qu), and gallic acid (Ga) from Psidium guajava Linn. (PG) and Aegle marmelos (L.) Correa. (AM) and correlate with antioxidant activity. The stock solution (1 mg/mL) of standard Ru, Qu, and Ga in methanol: Water (1:1) was serially diluted and spotted (5 μL) on slica gel 60 F 254 thin-layer chromatography plates. Toluene: Ethyl acetate: Formic acid: Methanol (3:4:0.8:0.7, v/v/v) was selected as mobile phase for analysis at 254 nm. Hydroalcoholic (1:1) extracts of leaves of PG and AM were fractionated and similarly analyzed. Antioxidant activity was also determined using 2, 2-diphenyl-1-picrylhydrazyl assay. The developed method was robust and resolved Ru, Qu, and Ga at R f 0.08 ± 0.02, 0.76 ± 0.01, and 0.63 ± 0.02, respectively. The intra-day, interday precision, and interanalyst were limit of detection and limit of quantification for Ru, Qu, and Ga were 4.51, 4.2, 5.27, and 13.67, 12.73, 15.98 ng/spot, respectively. Antioxidant activity (Log 50% inhibition) of PG and AM was 4.947 ± 0.322 and 6.498 ± 0.295, respectively. The developed HPTLC method was rapid, accurate, precise, reproducible, and specific for the simultaneous estimation of Ru, Qu, and Ga. HPTLC method for simultaneous determination and quantification of Rutin, Quercetin and Gallic acid, is reported for quality control of herbal drugs. Abbreviations Used: A: Aqueous fraction; AM: Aegle marmelos L. Correa; B: Butanol fraction; C: Chloroform fraction; EA: Ethyl acetate fraction; Ga: Gallic acid; H: Hexane fraction; HA: Hydroalcoholic extract; HPTLC: High-performance thin-layer chromatography; PG: Psidium guajava ; Qu: Quercetin; Ru: Rutin.

High performance sandwich structured Si thin film anodes with LiPON coating

Science.gov (United States)

Luo, Xinyi; Lang, Jialiang; Lv, Shasha; Li, Zhengcao

2018-04-01

The sandwich structured silicon thin film anodes with lithium phosphorus oxynitride (LiPON) coating are synthesized via the radio frequency magnetron sputtering method, whereas the thicknesses of both layers are in the nanometer range, i.e. between 50 and 200 nm. In this sandwich structure, the separator simultaneously functions as a flexible substrate, while the LiPON layer is regarded as a protective layer. This sandwich structure combines the advantages of flexible substrate, which can help silicon release the compressive stress, and the LiPON coating, which can provide a stable artificial solidelectrolyte interphase (SEI) film on the electrode. As a result, the silicon anodes are protected well, and the cells exhibit high reversible capacity, excellent cycling stability and good rate capability. All the results demonstrate that this sandwich structure can be a promising option for high performance Si thin film lithium ion batteries.

High conductivity and transparent aluminum-based multi-layer source/drain electrodes for thin film transistors

Science.gov (United States)

Yao, Rihui; Zhang, Hongke; Fang, Zhiqiang; Ning, Honglong; Zheng, Zeke; Li, Xiaoqing; Zhang, Xiaochen; Cai, Wei; Lu, Xubing; Peng, Junbiao

2018-02-01

In this study, high conductivity and transparent multi-layer (AZO/Al/AZO-/Al/AZO) source/drain (S/D) electrodes for thin film transistors were fabricated via conventional physical vapor deposition approaches, without toxic elements or further thermal annealing process. The 68 nm-thick multi-layer films with excellent optical properties (transparency: 82.64%), good electrical properties (resistivity: 6.64  ×  10-5 Ω m, work function: 3.95 eV), and superior surface roughness (R q   =  0.757 nm with scanning area of 5  ×  5 µm2) were fabricated as the S/D electrodes. Significantly, comprehensive performances of AZO films are enhanced by the insertion of ultra-thin Al layers. The optimal transparent TFT with this multi-layer S/D electrodes exhibited a decent electrical performance with a saturation mobility (µ sat) of 3.2 cm2 V-1 s-1, an I on/I off ratio of 1.59  ×  106, a subthreshold swing of 1.05 V/decade. The contact resistance of AZO/Al/AZO/Al/AZO multi-layer electrodes is as low as 0.29 MΩ. Moreover, the average visible light transmittance of the unpatterned multi-layers constituting a whole transparent TFT could reach 72.5%. The high conductivity and transparent multi-layer S/D electrodes for transparent TFTs possessed great potential for the applications of the green and transparent displays industry.

High-permeance crosslinked PTMSP thin-film composite membranes as supports for CO2 selective layer formation

Directory of Open Access Journals (Sweden)

Stepan D. Bazhenov

2016-10-01

Full Text Available In the development of the composite gas separation membranes for post-combustion CO2 capture, little attention is focused on the optimization of the membrane supports, which satisfy the conditions of this technology. The primary requirements to the membrane supports are concerned with their high CO2 permeance. In this work, the membrane supports with desired characteristics were developed as high-permeance gas separation thin film composite (TFC membranes with the thin defect-free layer from the crosslinked highly permeable polymer, poly[1-(trimethylsilyl-1-propyne] (PTMSP. This layer is insoluble in chloroform and can be used as a gutter layer for the further deposition of the СО2-selective materials from the organic solvents. Crosslinking of PTMSP was performed using polyethyleneimine (PEI and poly (ethyleneglycol diglycidyl ether (PEGDGE as crosslinking agents. Optimal concentrations of PEI in PTMSP and PEGDGE in methanol were selected in order to diminish the undesirable effect on the final membrane gas transport characteristics. The conditions of the kiss-coating technique for the deposition of the thin defect-free PTMSP-based layer, namely, composition of the casting solution and the speed of movement of the porous commercial microfiltration-grade support, were optimized. The procedure of post-treatment with alcohols and alcohol solutions was shown to be crucial for the improvement of gas permeance of the membranes with the crosslinked PTMSP layer having thickness ranging within 1–2.5 μm. The claimed membranes showed the following characteristics: CO2 permeance is equal to 50–54 m3(STP/(m2 h bar (18,500–20,000 GPU, ideal CO2/N2 selectivity is 3.6–3.7, and their selective layers are insoluble in chloroform. Thus, the developed high-permeance TFC membranes are considered as a promising supports for further modification by enhanced CO2 selective layer formation. Keywords: Thin-film composite membrane

Delamination of Compressed Thin Layers at Corners

DEFF Research Database (Denmark)

Sørensen, Kim D.; Jensen, Henrik Myhre; Clausen, Johan

2008-01-01

An analysis of delamination for a thin elastic layer under compression, attached to a substrate at a corner is carried out. The analysis is performed by combining results from interface fracture mechanics and the theory of thin shells. In contrast with earlier results for delamination on a flat s...... layers, Fracture mechanics, Crack closure, Steady state crack propagation.......An analysis of delamination for a thin elastic layer under compression, attached to a substrate at a corner is carried out. The analysis is performed by combining results from interface fracture mechanics and the theory of thin shells. In contrast with earlier results for delamination on a flat...... results for the fracture mechanical properties have been obtained, and these are applied in a study of the effect of contacting crack faces. Special attention has been given to analyse conditions under which steady state propagation of buckling driven delamination takes place. Keywords: Delamination, Thin...

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

Science.gov (United States)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

International Nuclear Information System (INIS)

Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition

Directory of Open Access Journals (Sweden)

Junsheng Liang

2016-01-01

Full Text Available Dense and crack-free barium titanate (BaTiO3, BTO thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

Layer-by-Layer-Assembled High-Performance Broadband Antireflection Coatings

KAUST Repository

Shimomura, Hiroomi

2010-03-24

Nanoparticles are indispensable ingredients of solution-processed optical, dielectric, and catalytic thin films. Although solution-based methods are promising low-cost alternatives to vacuum methods, they can have significant limitations. Coating uniformity, thickness control, roughness control, mechanical durability, and incorporation of a diverse set of functional organic molecules into nanoparticle thin films are major challenges. We have used the electrostatic layer-by-layer assembly technique to make uniform, conformal multistack nanoparticle thin films for optical applications with precise thickness control over each stack. Two particularly sought-after optical applications are broadband antireflection and structural color. The effects of interstack and surface roughness on optical properties of these constructs (e.g., haze and spectral response) have been studied quantitatively using a combination of Fourier-transform methods and atomic force microscopy measurements. Deconvoluting root-mean-square roughness into its large-, intermediate-, and small-scale components enables enhanced optical simulations. A 4-stack broadband antireflection coating (<0.5% average reflectance in the visible range, and 0.2% haze) composed of alternating high-index (n ≈ 1.96) and low-index (n ≈ 1.28) stacks has been made on glass substrate. Films calcinated at 550 °C endure a one-hour-long cloth cleaning test under 100 kPa normal stress. © 2010 American Chemical Society.

Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

International Nuclear Information System (INIS)

Hong, David; Chiang, Hai Q.; Presley, Rick E.; Dehuff, Nicole L.; Bender, Jeffrey P.; Park, Cheol-Hee; Wager, John F.; Keszler, Douglas A.

2006-01-01

A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n - 1)d 10 ns 0 (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide

High performance diamond-like carbon layers obtained by pulsed laser deposition for conductive electrode applications

Science.gov (United States)

Stock, F.; Antoni, F.; Le Normand, F.; Muller, D.; Abdesselam, M.; Boubiche, N.; Komissarov, I.

2017-09-01

For the future, one of the biggest challenge faced to the technologies of flat panel display and various optoelectronic and photovoltaic devices is to find an alternative to the use of transparent conducting oxides like ITO. In this new approach, the objective is to grow high conductive thin-layer graphene (TLG) on the top of diamond-like carbon (DLC) layers presenting high performance. DLC prepared by pulsed laser deposition (PLD) have attracted special interest due to a unique combination of their properties, close to those of monocrystalline diamond, like its transparency, hardness and chemical inertia, very low roughness, hydrogen-free and thus high thermal stability up to 1000 K. In our future work, we plane to explore the synthesis of conductive TLG on top of insulating DLC thin films. The feasibility and obtained performances of the multi-layered structure will be explored in great details in the short future to develop an alternative to ITO with comparable performance (conductivity of transparency). To select the best DLC candidate for this purpose, we focus this work on the physicochemical properties of the DLC thin films deposited by PLD from a pure graphite target at two wavelengths (193 and 248 nm) at various laser fluences. A surface graphenization process, as well as the required efficiency of the complete structure (TLG/DLC) will clearly be related to the DLC properties, especially to the initial sp3/sp2 hybridization ratio. Thus, an exhaustive description of the physicochemical properties of the DLC layers is a fundamental step in the research of comparable performance to ITO.

Layer-by-Layer-Assembled High-Performance Broadband Antireflection Coatings

KAUST Repository

Shimomura, Hiroomi; Gemici, Zekeriyya; Cohen, Robert E.; Rubner, Michael F.

2010-01-01

uniformity, thickness control, roughness control, mechanical durability, and incorporation of a diverse set of functional organic molecules into nanoparticle thin films are major challenges. We have used the electrostatic layer-by-layer assembly technique

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Structural properties and sensing performance of high-k Nd2TiO5 thin layer-based electrolyte-insulator-semiconductor for pH detection and urea biosensing.

Science.gov (United States)

Pan, Tung-Ming; Lin, Jian-Chi; Wu, Min-Hsien; Lai, Chao-Sung

2009-05-15

For high sensitive pH sensing, an electrolyte-insulator-semiconductor (EIS) device with Nd(2)TiO(5) thin layers fabricated on Si substrates by means of reactive sputtering and the subsequent post-deposition annealing (PDA) treatment was proposed. In this work, the effect of thermal annealing (600, 700, 800, and 900 degrees C) on the structural characteristics of Nd(2)TiO(5) thin layer was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy. The observed structural properties were then correlated with the resulting pH sensing performances. For enzymatic field-effect-transistors-based urea biosensing, a hybrid configuration of the proposed Nd(2)TiO(5) thin layer with urease-immobilized alginate film attached was established. Within the experimental conditions investigated, the EIS device with the Nd(2)TiO(5) thin layer annealed at 800 degrees C exhibited a higher pH detection sensitivity of 57.2 mV/pH, a lower hysteresis voltage of 2.33 mV, and a lower drift rate of 1.80 mV/h compared to those at other annealing temperatures. These results are attributed to the formation of a thinner low-k interfacial layer at the oxide/Si interface and the higher surface roughness occurred at this annealing temperature. Furthermore, the presented urea biosensor was also proved to be able to detect urea with good linearity (R(2)=0.99) and reasonable sensitivity of 9.52 mV/mM in the urea concentration range of 3-40 mM. As a whole, the present work has provided some fundamental data for the use of Nd(2)TiO(5) thin layer for EIS-based pH detection and the extended application for biosensing.

HIGH PERFORMANCE THIN LAYER CHROMATOGRAPHIC DETERMINATION OF CAFFEIC ACID AND ROSMARINIC ACID FROM THE LEAVES OF Orthosiphon stamineus

Directory of Open Access Journals (Sweden)

M. Amzad Hossain

2010-06-01

Full Text Available This paper presents the studies performed on extraction of Orthosiphon stamineus, Benth by using different solvent for the identification and quantification of the caffeic acid derivatives such as caffeic acid  and rosmarinic acid which confers to the leaves of this plant with remarkable pharmaceutical properties. High performance thin-layer chromatographic (HPTLC allows the identification and the quantification of more than 20 samples in the same chromatographic run. The analysis of the samples requires 15-30 min compared with more than 2 h using a typical HPLC method. Using the techniques of the HPTLC and the UV-VIS spectra we have found that the extraction of this herb plant contain, the caffeic acid and rosmarinic acid ranging between 0.029% up to 0.506% and up to 0.24% to 2.24% respectively.     Keywords: Caffice acid derivatives, quantification, Malaysian Orthosiphon stamineus, HPTLC

Studies of oxide-based thin-layered heterostructures by X-ray scattering methods

Energy Technology Data Exchange (ETDEWEB)

Durand, O. [Thales Research and Technology France, Route Departementale 128, F-91767 Palaiseau Cedex (France)]. E-mail: olivier.durand@thalesgroup.com; Rogers, D. [Nanovation SARL, 103 bis rue de Versailles 91400 Orsay (France); Universite de Technologie de Troyes, 10-12 rue Marie Curie, 10010 (France); Teherani, F. Hosseini [Nanovation SARL, 103 bis rue de Versailles 91400 Orsay (France); Andrieux, M. [LEMHE, ICMMOCNRS-UMR 8182, Universite d' Orsay, Batiment 410, 91410 Orsay (France); Modreanu, M. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland)

2007-06-04

Some X-ray scattering methods (X-ray reflectometry and Diffractometry) dedicated to the study of thin-layered heterostructures are presented with a particular focus, for practical purposes, on the description of fast, accurate and robust techniques. The use of X-ray scattering metrology as a routinely working non-destructive testing method, particularly by using procedures simplifying the data-evaluation, is emphasized. The model-independent Fourier-inversion method applied to a reflectivity curve allows a fast determination of the individual layer thicknesses. We demonstrate the capability of this method by reporting X-ray reflectometry study on multilayered oxide structures, even when the number of the layers constitutive of the stack is not known a-priori. Fast Fourier transform-based procedure has also been employed successfully on high resolution X-ray diffraction profiles. A study of the reliability of the integral-breadth methods in diffraction line-broadening analysis applied to thin layers, in order to determine coherent domain sizes, is also reported. Examples from studies of oxides-based thin-layers heterostructures will illustrate these methods. In particular, X-ray scattering studies performed on high-k HfO{sub 2} and SrZrO{sub 3} thin-layers, a (GaAs/AlOx) waveguide, and a ZnO thin-layer are reported.

Characterization of E 471 food emulsifiers by high-performance thin-layer chromatography-fluorescence detection.

Science.gov (United States)

Oellig, Claudia; Brändle, Klara; Schwack, Wolfgang

2018-07-13

Mono- and diacylglycerol (MAG and DAG) emulsifiers, also known as food additive E 471, are widely used to adjust techno-functional properties in various foods. Besides MAGs and DAGs, E 471 emulsifiers additionally comprise different amounts of triacylglycerols (TAGs) and free fatty acids (FFAs). MAGs, DAGs, TAGs and FFAs are generally determined by high-performance liquid chromatography (HPLC) or gas chromatography (GC) coupled to mass selective detection, analyzing the individual representatives of the lipid classes. In this work we present a rapid and sensitive method for the determination of MAGs, DAGs, TAGs and FFAs in E 471 emulsifiers by high-performance thin-layer chromatography with fluorescence detection (HPTLC-FLD), including a response factor system for quantitation. Samples were simply dissolved and diluted with t-butyl methyl ether before a two-fold development was performed on primuline pre-impregnated LiChrospher silica gel plates with diethyl ether and n-pentane/n-hexane/diethyl ether (52:20:28, v/v/v) as the mobile phases to 18 and 75 mm, respectively. For quantitation, the plate was scanned in the fluorescence mode at UV 366/>400 nm, when the cumulative signal for each lipid class was used. Calibration was done with 1,2-distearin and amounts of lipid classes were calculated with response factors and expressed as monostearin, distearin, tristearin and stearic acid. Limits of detection and quantitation were 1 and 4 ng/zone, respectively, for 1,2-distearin. Thus, the HPTLC-FLD approach represents a simple, rapid and convenient screening alternative to HPLC and GC analysis of the individual compounds. Visual detection additionally enables an easy characterization and the direct comparison of emulsifiers through the lipid class pattern, when utilized as a fingerprint. Copyright © 2018 Elsevier B.V. All rights reserved.

Optimizing pentacene thin-film transistor performance: Temperature and surface condition induced layer growth modification.

Science.gov (United States)

Lassnig, R; Hollerer, M; Striedinger, B; Fian, A; Stadlober, B; Winkler, A

2015-11-01

In this work we present in situ electrical and surface analytical, as well as ex situ atomic force microscopy (AFM) studies on temperature and surface condition induced pentacene layer growth modifications, leading to the selection of optimized deposition conditions and entailing performance improvements. We prepared p ++ -silicon/silicon dioxide bottom-gate, gold bottom-contact transistor samples and evaluated the pentacene layer growth for three different surface conditions (sputtered, sputtered + carbon and unsputtered + carbon) at sample temperatures during deposition of 200 K, 300 K and 350 K. The AFM investigations focused on the gold contacts, the silicon dioxide channel region and the highly critical transition area. Evaluations of coverage dependent saturation mobilities, threshold voltages and corresponding AFM analysis were able to confirm that the first 3-4 full monolayers contribute to the majority of charge transport within the channel region. At high temperatures and on sputtered surfaces uniform layer formation in the contact-channel transition area is limited by dewetting, leading to the formation of trenches and the partial development of double layer islands within the channel region instead of full wetting layers. By combining the advantages of an initial high temperature deposition (well-ordered islands in the channel) and a subsequent low temperature deposition (continuous film formation for low contact resistance) we were able to prepare very thin (8 ML) pentacene transistors of comparably high mobility.

Enhancing the performance of organic thin-film transistors using an organic-doped inorganic buffer layer

Energy Technology Data Exchange (ETDEWEB)

Su, Shui-Hsiang, E-mail: shsu@isu.edu.tw; Wu, Chung-Ming; Kung, Shu-Yi; Yokoyama, Meiso

2013-06-01

Organic thin-film transistors (OTFTs) with various buffer layers between the active layer and source/drain electrodes were investigated. The structure was polyethylene terephthalate/indium-tin oxide/poly(methyl methacrylate) (PMMA)/pentacene/buffer layer/Au (source/drain). V{sub 2}O{sub 5}, 4,4′,4″-tris{N,(3-methylpheny)-N-phenylamino}-triphenylamine (m-MTDATA) and m-MTDATA-doped V{sub 2}O{sub 5} films were utilized as buffer layers. The electrical performances of OTFTs in terms of drain current, threshold voltage, mobility and on/off current ratio have been determined. As a result, the saturation current of − 40 μA is achieved in OTFTs with a 10% m-MTDATA-doped V{sub 2}O{sub 5} buffer layer at a V{sub GS} of − 60 V. The on/off current ratio reaches 2 × 10{sup 5}, which is approximately double of the device without a buffer layer. The energy band diagrams of the electrode/buffer layer/pentacene were measured using ultra-violet photoelectron spectroscopy. The improvement in electrical characteristics of the OTFTs is attributable to the weakening of the interface dipole and the lowering of the barrier to enhance holes transportation from the source electrode to the active layer. - Highlights: • A buffer layer enhances the performance of organic thin-film transistors (OTFTs). • The buffer layer consists of organic-doped inorganic material. • Interface dipole is weakened at the active layer/electrodes interface of OTFTs.

Effect of active layer deposition temperature on the performance of sputtered amorphous In—Ga—Zn—O thin film transistors

International Nuclear Information System (INIS)

Wu Jie; Shi Junfei; Dong Chengyuan; Chen Yuting; Zhou Daxiang; Hu Zhe; Zhan Runze; Zou Zhongfei

2014-01-01

The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as ''optimized-annealed'' are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150 °C while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and O1s spectra apparently. Importantly, the variation of field effect mobility of a-IGZO TFTs with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films. Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature. (semiconductor devices)

Effect of ordered mesoporous carbon contact layer on the sensing performance of sputtered RuO2 thin film pH sensor.

Science.gov (United States)

Lonsdale, W; Maurya, D K; Wajrak, M; Alameh, K

2017-03-01

The effect of contact layer on the pH sensing performance of a sputtered RuO 2 thin film pH sensor is investigated. The response of pH sensors employing RuO 2 thin film electrodes on screen-printed Pt, carbon and ordered mesoporous carbon (OMC) contact layers are measured over a pH range from 4 to 10. Working electrodes with OMC contact layer are found to have Nernstian pH sensitivity (-58.4mV/pH), low short-term drift rate (5.0mV/h), low hysteresis values (1.13mV) and fast reaction times (30s), after only 1h of conditioning. A pH sensor constructed with OMC carbon contact layer displays improved sensing performance compared to Pt and carbon-based counterparts, making this electrode more attractive for applications requiring highly-accurate pH sensing with reduced conditioning time. Copyright © 2016 Elsevier B.V. All rights reserved.

Stability indicating high performance thin-layer chromatographic method for simultaneous estimation of pantoprazole sodium and itopride hydrochloride in combined dosage form

Directory of Open Access Journals (Sweden)

Deepak Bageshwar

2011-11-01

Full Text Available A specific, precise and stability indicating high-performance thin-layer chromatographic method for simultaneous estimation of pantoprazole sodium and itopride hydrochloride in pharmaceutical formulations was developed and validated. The method employed TLC aluminium plates precoated with silica gel 60F254 as the stationary phase. The solvent system consisted of methanol:water:ammonium acetate; 4.0:1.0:0.5 (v/v/v. This system was found to give compact and dense spots for both itopride hydrochloride (Rf value of 0.55±0.02 and pantoprazole sodium (Rf value of 0.85±0.04. Densitometric analysis of both drugs was carried out in the reflectance–absorbance mode at 289 nm. The linear regression analysis data for the calibration plots showed a good linear relationship with R2=0.9988±0.0012 in the concentration range of 100–400 ng for pantoprazole sodium. Also, the linear regression analysis data for the calibration plots showed a good linear relationship with R2=0.9990±0.0008 in the concentration range of 200–1200 ng for itopride hydrochloride. The method was validated for specificity, precision, robustness and recovery. Statistical analysis proves that the method is repeatable and selective for the estimation of both the said drugs. As the method could effectively separate the drug from its degradation products, it can be employed as a stability indicating method. Keywords: Gastroesophageal reflux disease (GERD, Itopride hydrochloride, Pantoprazole sodium, High performance thin layer chromatography (HPTLC, Stability indicating, Forced degradation

Analysis of influence of buffer layers on microwave propagation through high-temperature superconducting thin films

International Nuclear Information System (INIS)

Ceremuga, J.; Barton, M.; Miranda, F.

1994-01-01

Methods of analysis of microwave propagation through superconducting thin films with buffer layers on dielectric substrates have been discussed. Expressions describing the transmission coefficient S 21 through the structure and the complex conductivity sigma of a superconductor in an analytical form have been derived. The derived equations are valid for microwave propagation in waveguides as well as in free space with relevant definition of impedances. Using the obtained solutions, the influences of buffer layers' parameters (thickness, relative permittivity and loss tangent) on the transmission coefficient has been investigated using MATLAB. Simulations have been performed for 10 GHz transmission through YBa 2 Cu 3 O 7 films on sapphire with SrTiO 3 and CeO 2 buffer layers and on silicon with CaF 2 and YSZ buffer layers. To illustrate the simulations, measurements of the transmission through YBCO film on sapphire with SrTiO 3 buffer layer have been performed. It has been shown that even lossy buffer layers have very little impact (smaller than 1% in magnitude and 0.3% in phase) on the transmission coefficient through superconducting thin films, providing their thickness is below 10 mu m. (author)

Relating performance of thin-film composite forward osmosis membranes to support layer formation and structure

KAUST Repository

Tiraferri, Alberto; Yip, Ngai Yin; Phillip, William A.; Schiffman, Jessica D.; Elimelech, Menachem

2011-01-01

the technology to the point that it is commercially viable. Here, a systematic investigation of the influence of thin-film composite membrane support layer structure on forward osmosis performance is conducted. The membranes consist of a selective polyamide

Improved Performance of Fluorinated Copper Phthalocyanine Thin Film Transistors Using Para-hexaphenyl as the Inducing Layer

International Nuclear Information System (INIS)

Ma Feng; Wang Shi-Rong; Li Xiang-Gao; Yan Dong-Hang

2011-01-01

We demonstrate n-type organic thin film transistors (OTFTs) employing copper hexadecafluorophthalocyanine (CuPcF 16 ) as the active layer and para-hexaphenyl (p-6p) as the inducing layer. Compared with the CuPcF 16 -based OTFTs without the p-6p inducing layer, the performance of the CuPcF 16 /p-6p OTFTs is greatly improved. The charge carrier field-effect mobility μ, on-off current ratio I on /I off and threshold voltage V T of the CuPcF 16 /p-6p OTFTs are 0.07 cm 2 /V·s, 1.61 × 10 5 and 6.28 V, respectively, approaching the level of a single crystal device. The improved performance is attributed to the introduction of p-6p to form a highly oriented and continuous film of CuPcF 16 with the molecular π-π stack direction parallel to the substrate. (cross-disciplinary physics and related areas of science and technology)

Delamination of Compressed Thin Layers at Corners

DEFF Research Database (Denmark)

Sørensen, Kim D.; Jensen, Henrik Myhre; Clausen, Johan

2008-01-01

An analysis of delamination for a thin elastic layer under compression, attached to a substrate at a corner is carried out. The analysis is performed by combining results from interface fracture mechanics and the theory of thin shells. In contrast with earlier results for delamination on a flat...

Separation, identification and quantification of carotenoids and chlorophylls in dietary supplements containing Chlorella vulgaris and Spirulina platensis using High Performance Thin Layer Chromatography.

Science.gov (United States)

Hynstova, Veronika; Sterbova, Dagmar; Klejdus, Borivoj; Hedbavny, Josef; Huska, Dalibor; Adam, Vojtech

2018-01-30

In this study, 14 commercial products (dietary supplements) containing alga Chlorella vulgaris and cyanobacteria Spirulina platensis, originated from China and Japan, were analysed. UV-vis spectrophotometric method was applied for rapid determination of chlorophylls, carotenoids and pheophytins; as degradation products of chlorophylls. High Performance Thin-Layer Chromatography (HPTLC) was used for effective separation of these compounds, and also Atomic Absorption Spectrometry for determination of heavy metals as indicator of environmental pollution. Based on the results obtained from UV-vis spectrophotometric determination of photosynthetic pigments (chlorophylls and carotenoids), it was confirmed that Chlorella vulgaris contains more of all these pigments compared to the cyanobacteria Spirulina platensis. The fastest mobility compound identified in Chlorella vulgaris and Spirulina platensis using HPTLC method was β-carotene. Spectral analysis and standard calibration curve method were used for identification and quantification of separated substances on Thin-Layer Chromatographic plate. Quantification of copper (Cu 2+ , at 324.7 nm) and zinc (Zn 2+ , at 213.9nm) was performed using Flame Atomic Absorption Spectrometry with air-acetylene flame atomization. Quantification of cadmium (Cd 2+ , at 228.8 nm), nickel (Ni 2+ , at 232.0nm) and lead (Pb 2+ , at 283.3nm) by Electrothermal Graphite Furnace Atomic Absorption Spectrometry; and quantification of mercury (Hg 2+ , at 254nm) by Cold Vapour Atomic Absorption Spectrometry. Copyright © 2017 Elsevier B.V. All rights reserved.

High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

KAUST Repository

Nayak, Pradipta K.

2013-07-18

We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

KAUST Repository

Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

2013-01-01

We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

Science.gov (United States)

Li, Huijin; Han, Dedong; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2018-05-01

The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 °C and ZnO film grown at 120 °C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 × 10-13 A, Ion/Ioff ratio of 3.4 × 109, saturation mobility μsat of 12 cm2 V-1 s-1, subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual-layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time.

Development of Validated High-performance Thin-layer Chromatography Method for Simultaneous Determination of Quercetin and Kaempferol in Thespesia populnea.

Science.gov (United States)

Panchal, Hiteksha; Amin, Aeshna; Shah, Mamta

2017-01-01

Thespesia populnea L. (Family: Malvaceae) is a well-known medicinal plant distributed in tropical regions of the world and cultivated in South Gujarat and indicated to be useful in cutaneous affections, psoriasis, ringworm, and eczema. Bark and fruits are indicated in the diseases of skin, urethritis, and gonorrhea. The juice of fruits is employed in treating certain hepatic diseases. The plant is reported to contain flavonoids, quercetin, kaempferol, gossypetin, Kaempferol-3-monoglucoside, β-sitosterol, kaempferol-7-glucoside, and gossypol. T. populnea is a common component of many herbal and Ayurvedic formulation such as Kamilari and Liv-52. The present study aimed at developing validated and reliable high-performance thin layer chromatography (HPTLC) method for the analysis of quercetin and kaempferol simultaneously in T. populnea . The method employed thin-layer chromatography aluminum sheets precoated with silica gel as the stationary phase and toluene: ethyl acetate: formic acid (6:4:0.3 v/v/v) as the mobile phase, which gave compact bands of quercetin and kaempferol. Linear regression data for the calibration curves of standard quercetin and kaempferol showed a good linear relationship over a concentration range of 100-600 ng/spot and 500-3000 ng/spot with respect to the area and correlation coefficient (R2) was 0.9955 and 0.9967. The method was evaluated regarding accuracy, precision, selectivity, and robustness. Limits of detection and quantitation were recorded as 32.06 and 85.33 ng/spot and 74.055 and 243.72 ng/spot for quercetin and kaempferol, respectively. We concluded that this method employing HPTLC in the quantitative determination of quercetin and kaempferol is efficient, simple, accurate, and validated.

Thin pentacene layer under pressure

International Nuclear Information System (INIS)

Srnanek, R.; Jakabovic, J.; Kovac, J.; Donoval, D.; Dobrocka, E.

2011-01-01

Organic semiconductors have got a lot of interest during the last years, due to their usability for organic thin film transistor. Pentacene, C 22 H 14 , is one of leading candidates for this purpose. While we obtain the published data about pressure-induced phase transition only on single crystal of pentacene we present pressure-induced phase transition in pentacene thin layers for the first time. Changes in the pentacene structure, caused by the pressure, were detected by micro-Raman spectroscopy. Applying the defined pressure to the pentacene layer it can be transformed from thin phase to bulk phase. Micro-Raman spectroscopy was found as useful method for detection of changes and phases identification in the pentacene layer induced by mechanical pressure. Such a pressure-induced transformation of pentacene thin layers was observed and identified for the first time. (authors)

Development and validation of high-performance liquid chromatography and high-performance thin-layer chromatography methods for the quantification of khellin in Ammi visnaga seed

Science.gov (United States)

Kamal, Abid; Khan, Washim; Ahmad, Sayeed; Ahmad, F. J.; Saleem, Kishwar

2015-01-01

Objective: The present study was used to design simple, accurate and sensitive reversed phase-high-performance liquid chromatography RP-HPLC and high-performance thin-layer chromatography (HPTLC) methods for the development of quantification of khellin present in the seeds of Ammi visnaga. Materials and Methods: RP-HPLC analysis was performed on a C18 column with methanol: Water (75: 25, v/v) as a mobile phase. The HPTLC method involved densitometric evaluation of khellin after resolving it on silica gel plate using ethyl acetate: Toluene: Formic acid (5.5:4.0:0.5, v/v/v) as a mobile phase. Results: The developed HPLC and HPTLC methods were validated for precision (interday, intraday and intersystem), robustness and accuracy, limit of detection and limit of quantification. The relationship between the concentration of standard solutions and the peak response was linear in both HPLC and HPTLC methods with the concentration range of 10–80 μg/mL in HPLC and 25–1,000 ng/spot in HPTLC for khellin. The % relative standard deviation values for method precision was found to be 0.63–1.97%, 0.62–2.05% in HPLC and HPTLC for khellin respectively. Accuracy of the method was checked by recovery studies conducted at three different concentration levels and the average percentage recovery was found to be 100.53% in HPLC and 100.08% in HPTLC for khellin. Conclusions: The developed HPLC and HPTLC methods for the quantification of khellin were found simple, precise, specific, sensitive and accurate which can be used for routine analysis and quality control of A. visnaga and several formulations containing it as an ingredient. PMID:26681890

High performance CaS solar-blind ultraviolet photodiodes fabricated by seed-layer-assisted growth

International Nuclear Information System (INIS)

He, Qing Lin; Lai, Ying Hoi; Sou, Iam Keong; Liu, Yi; Beltjens, Emeline; Qi, Jie

2015-01-01

CaS, with a direct bandgap of 5.38 eV, is expected to be a strong candidate as the active-layer of high performance solar-blind UV photodiodes that have important applications in both civilian and military sectors. Here, we report that a seed-layer-assisted growth approach via molecular beam epitaxy can result in high crystalline quality rocksalt CaS thin films on zincblende GaAs substrates. The Au/CaS/GaAs solar-blind photodiodes demonstrated , more than five orders in its visible rejection power, a photoresponse of 36.8 mA/w at zero bias and a corresponding quantum efficiency as high as 19% at 235 nm

Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin, E-mail: junsin@skku.edu

2017-02-28

Highlights: • The characteristics of thin film transistors using double active layers are examined. • Electrical characteristics have been improved for the double active layers devices. • The total trap density can be decreased by insert-ion of ultrathin ITO film. - Abstract: This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm{sup 2}/V·s) compared with the ITZO-only TFTs (∼34 cm{sup 2}/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and −2.39 V compared with 6.10 and −6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of E{sub A} were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO{sub 2} reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

High Ms Fe16N2 thin film with Ag under layer on GaAs substrate

Energy Technology Data Exchange (ETDEWEB)

Allard Jr, Lawrence Frederick [ORNL

2016-01-01

(001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize the binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain. INTRODUCTION

Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

Science.gov (United States)

Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

2018-03-27

There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

Mathematical modelling of thin layer drying of pear

Directory of Open Access Journals (Sweden)

Lutovska Monika

2016-01-01

Full Text Available In this study, a thin - layer drying of pear slices as a function of drying conditions were examined. The experimental data set of thin - layer drying kinetics at five drying air temperatures 30, 40, 50, 60 and 70°C, and three drying air velocities 1, 1.5 and 2 m s-1 were obtained on the experimental setup, designed to imitate industrial convective dryer. Five well known thin - layer drying models from scientific literature were used to approximate the experimental data in terms of moisture ratio. In order to find which model gives the best results, numerical experiments were made. For each model and data set, the statistical performance index, (φ, and chi-squared, (χ2, value were calculated and models were ranked afterwards. The performed statistical analysis shows that the model of Midilli gives the best statistical results. Because the effect of drying air temperature and drying air velocity on the empirical parameters was not included in the base Midilli model, in this study the generalized form of this model was developed. With this model, the drying kinetic data of pear slices can be approximated with high accuracy. The effective moisture diffusivity was determined by using Fick’s second laws. The obtained values of the effective moisture diffusivity, (Deff, during drying ranged between 6.49 x 10-9 and 3.29 x 10-8 m2 s-1, while the values of activation energy (E0 varied between 28.15 to 30.51 kJ mol-1.

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.

2014-11-11

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

Analysis of Bioactive Components of Oilseed Cakes by High-Performance Thin-Layer Chromatography-(Bioassay Combined with Mass Spectrometry

Directory of Open Access Journals (Sweden)

Sue-Siang Teh

2015-03-01

Full Text Available Hemp, flax and canola seed cakes are byproducts of the plant oil extraction industry that have not received much attention in terms of their potential use for human food instead of animal feed. Thus, the bioactivity profiling of these oilseed cakes is of interest. For their effect-directed analysis, planar chromatography was combined with several (bioassays, namely 2,2-diphenyl-1-picrylhydrazyl scavenging, acetylcholine esterase inhibition, planar yeast estrogen screen, antimicrobial Bacillus subtilis and Aliivibrio fischeri assays. The streamlined high-performance thin-layer chromatography (HPTLC-bioassay method allowed the discovery of previously unknown bioactive compounds present in these oilseed cake extracts. In contrast to target analysis, the direct link to the effective compounds allowed comprehensive information with regard to selected effects. HPTLC-electrospray ionization-mass spectrometry via the elution-head based TLC-MS Interface was used for a first characterization of the unknown effective compounds. The demonstrated bioactivity profiling on the feed/food intake side may guide the isolation of active compounds for production of functional food or for justified motivation of functional feed/food supplements.

Assessment of aflatoxin B1 in livestock feed and feed ingredients by high-performance thin layer chromatography

Directory of Open Access Journals (Sweden)

Korrapati Kotinagu

2015-12-01

Full Text Available Aim: Detection of aflatoxin B1 in Livestock compound Feed and feed ingredients by high-performance thin layer chromatography (HPTLC. Materials and Methods: Chromatography was performed on HPTLC silica gel 60 F 254, aluminum sheets by CAMAG automatic TLC sampler 4, with mobile phase condition chloroform:acetone:water (28:4:0.06. Extraction of aflatoxin B1 from samples was done as per AOAC method and screening and quantification done by HPTLC Scanner 4 under wavelength 366 nm. Results: A total of 97 livestock feed (48 and feed ingredients (49 samples received from different livestock farms and farmers were analyzed for aflatoxin B1of which 29 samples were contaminated, constituting 30%. Out of 48 livestock compound feed samples, aflatoxin B1 could be detected in 16 samples representing 33%, whereas in livestock feed ingredients out of 49 samples, 13 found positive for aflatoxin B1 representing 24.5%. Conclusion: HPTLC assures good recovery, precision, and linearity in the quantitative determination of aflatoxin B1 extracted from Livestock compound feed and feed ingredients. As more number of feed and feed ingredients are contaminated with aflatoxin B1 which causes deleterious effects in both animal and human beings, so there is a need for identifying the source of contamination, executing control measures, enabling better risk assessment techniques, and providing economic benefits.

Cost optimization of load carrying thin-walled precast high performance concrete sandwich panels

DEFF Research Database (Denmark)

Hodicky, Kamil; Hansen, Sanne; Hulin, Thomas

2015-01-01

and HPCSP’s geometrical parameters as well as on material cost function in the HPCSP design. Cost functions are presented for High Performance Concrete (HPC), insulation layer, reinforcement and include labour-related costs. The present study reports the economic data corresponding to specific manufacturing......The paper describes a procedure to find the structurally and thermally efficient design of load-carrying thin-walled precast High Performance Concrete Sandwich Panels (HPCSP) with an optimal economical solution. A systematic optimization approach is based on the selection of material’s performances....... The solution of the optimization problem is performed in the computer package software Matlab® with SQPlab package and integrates the processes of HPCSP design, quantity take-off and cost estimation. The proposed optimization process outcomes in complex HPCSP design proposals to achieve minimum cost of HPCSP....

Pulsed EM Field Response of a Thin, High-Contrast, Finely Layered Structure With Dielectric and Conductive Properties

NARCIS (Netherlands)

De Hoop, A.T.; Jiang, L.

2009-01-01

The response of a thin, high-contrast, finely layered structure with dielectric and conductive properties to an incident, pulsed, electromagnetic field is investigated theoretically. The fine layering causes the standard spatial discretization techniques to solve Maxwell's equations numerically to

Final Report: Rational Design of Wide Band Gap Buffer Layers for High-Efficiency Thin-Film Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Lordi, Vincenzo [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2016-09-30

The main objective of this project is to enable rational design of wide band gap buffer layer materials for CIGS thin-film PV by building understanding of the correlation of atomic-scale defects in the buffer layer and at the buffer/absorber interface with device electrical properties. Optimized wide band gap buffers are needed to reduce efficiency loss from parasitic absorption in the buffer. The approach uses first-principles materials simulations coupled with nanoscale analytical electron microscopy as well as device electrical characterization. Materials and devices are produced by an industrial partner in a manufacturing line to maximize relevance, with the goal of enabling R&D of new buffer layer compositions or deposition processes to push device efficiencies above 21%. Cadmium sulfide (CdS) is the reference material for analysis, as the prototypical high-performing buffer material.

Determination of Four Major Saponins in Skin and Endosperm of Seeds of Horse Chestnut (Aesculus Hippocastanum L.) Using High Performance Liquid Chromatography with Positive Confirmation by Thin Layer Chromatography

OpenAIRE

Abudayeh, Zead Helmi Mahmoud; Al Azzam, Khaldun Mohammad; Naddaf, Ahmad; Karpiuk, Uliana Vladimirovna; Kislichenko, Viktoria Sergeevna

2015-01-01

urpose: To separate and quantify four major saponins in the extracts of the skin and the endosperm of seeds of horse chestnut (Aesculus hippocastanum L.) using ultrasonic solvent extraction followed by a high performance liquid chromatography-diode array detector (HPLC-DAD) with positive confirmation by thin layer chromatography (TLC). Methods: The saponins: escin Ia, escin Ib, isoescin Ia and isoescin Ib were extracted using ultrasonic extraction method. The optimized ex...

Facile chemical synthesis of nanoporous layered δ-MnO{sub 2} thin film for high-performance flexible electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Hu, Yu; Wang, Jun; Jiang, Xionghua; Zheng, Yanfeng [The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Chen, Zhenxing, E-mail: chenzx65@mail.sysu.edu.cn [The Key Laboratory of Low-Carbon Chemistry and Energy Conservation of Guangdong Province, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

2013-04-15

Layered δ-MnO{sub 2} thin films with a three-dimensional nanostructure are successfully fabricated on stainless steel foil substrates for flexible electrochemical capacitors by a facile and effective chemical bath deposition technology from ethanol and potassium permanganate solution at 15 °C. The as-prepared thin films display nanoporous morphology and a water contact angle of 20°. Energy-dispersive X-ray spectroscopy, X-ray diffraction, and Fourier transform infrared spectroscopy analyses reveal that the thin films are composed of δ-MnO{sub 2}. Electrochemical data demonstrate that the δ-MnO{sub 2} thin film electrodes can deliver a high special capacitance of 447 F/g at 2 mV/s, and provide a good capacitance retention ratio of 87% after 1000 continuous cycles at 10 mV/s in 0.5 M Na{sub 2}SO{sub 4}. Compressive and tensile bending tests show that the as-prepared electrodes can steadily work over a wide range of applied curvatures between −2.5 cm{sup −1} (tension) and 2.5 cm{sup −1} (compression). Only a small decrease in special capacitance (0.9% at a curvature of 2.5 cm{sup −1} under compressive strain, or 1.2% at a curvature of −2.5 cm{sup −1} under tensile strain) is observed even after bending for 200 cycles, indicating the excellent mechanical flexibility and electrochemical stability of the δ-MnO{sub 2} thin film electrodes.

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

Science.gov (United States)

Fan, Wei

To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers

Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

Science.gov (United States)

Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

2018-07-01

Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates

NARCIS (Netherlands)

Evseev, S. B.; Milosavljevic, S.; Nanver, L. K.

2017-01-01

Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number of interfaces between

Separation of pigment formulations by high-performance thin-layer chromatography with automated multiple development.

Science.gov (United States)

Stiefel, Constanze; Dietzel, Sylvia; Endress, Marc; Morlock, Gertrud E

2016-09-02

Food packaging is designed to provide sufficient protection for the respective filling, legally binding information for the consumers like nutritional facts or filling information, and an attractive appearance to promote the sale. For quality and safety of the package, a regular quality control of the used printing materials is necessary to get consistently good print results, to avoid migration of undesired ink components into the food and to identify potentially faulty ink batches. Analytical approaches, however, have hardly been considered for quality assurance so far due to the lack of robust, suitable methods for the analysis of rarely soluble pigment formulations. Thus, a simple and generic high-performance thin-layer chromatography (HPTLC) method for the separation of different colored pigment formulations was developed on HPTLC plates silica gel 60 by automated multiple development. The gradient system provided a sharp resolution for differently soluble pigment constituents like additives and coating materials. The results of multi-detection allowed a first assignment of the differently detectable bands to particular chemical substance classes (e.g., lipophilic components), enabled the comparison of different commercially available pigment batches and revealed substantial variations in the composition of the batches. Hyphenation of HPTLC with high resolution mass spectrometry and infrared spectroscopy allowed the characterization of single unknown pigment constituents, which may partly be responsible for known quality problems during printing. The newly developed, precise and selective HPTLC method can be used as part of routine quality control for both, incoming pigment batches and monitoring of internal pigment production processes, to secure a consistent pigment composition resulting in consistent ink quality, a faultless print image and safe products. Hyphenation of HPTLC with the A. fischeri bioassay gave first information on the bioactivity or rather

Ni-YSZ cermet substrate supported thin SDC and YSZ+SDC bi-layer SOFCs

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.; Robertson, M.; Deces-Petit, C.; Xie, Y.; Hui, R.; Yick, S.; Styles, E.; Roller, J.; Kesler, O.; Qu, W.; Jankovic, J.; Tang, Z.; Perednis, D.; Maric, R.; Ghosh, D. [National Research Council of Canada, Vancouver, BC (Canada). Inst. for Fuel Cell Innovation

2005-07-01

One of the disadvantages of a ceria-based electrolyte is that it becomes a mixed conductor at anode conditions, which causes cell voltage loss and fuel efficiency loss due to internal shorting. Chemical and mechanical stability is another concern for long-term service. To lower manufacturing costs, efforts have been made to bring proven semiconductor manufacturing technology to Solid Oxide Fuel Cells (SOFCs). This study employed Tape casting of cermet substrates, Screen-printing of functional layers and Co-firing of cell components (TSC) to fabricate nickel (Ni)-cermet supported cells with mainly ceria-based thin electrolytes. Ni-Yttria-Stabilized Zirconia (YSZ) cermet supported cell with Samaria Doped Ceria (SDC) single layer electrolytes and YSZ+SDC bi-layer electrolytes were successfully developed for low-temperature performance characterization. The elemental distribution at the cell interface was mapped and the electrochemical performance of the cells was recorded. Many high-Zr-content micro-islands were found on the thin SDC surface. The influence of co-firing temperature and thin-film preparation methods on the Zr-islands' appearance was also investigated. Using in-situ sintered cathodes, high performance of the SDC cells was obtained. It was concluded that the bi-layer cells did show higher Open Circuit Voltage (OCV) values, with 1180 mW/cm{sup 2} at 650 degrees C, as well as good performance at 700-800 degrees C, with near OCV value. However, their performance was much lower than those of the SDC cells at low operating temperature. Zr-micro-islands formation on the SDC electrolyte was observed and investigated. 6 refs., 5 tabs., 7 figs.

Highly stable thin film transistors using multilayer channel structure

KAUST Repository

Nayak, Pradipta K.

2015-03-09

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

Ultra-thin Metal and Dielectric Layers for Nanophotonic Applications

DEFF Research Database (Denmark)

Shkondin, Evgeniy; Leandro, Lorenzo; Malureanu, Radu

2015-01-01

In our talk we first give an overview of the various thin films used in the field of nanophotonics. Then we describe our own activity in fabrication and characterization of ultra-thin films of high quality. We particularly focus on uniform gold layers having thicknesses down to 6 nm fabricated by......-beam deposition on dielectric substrates and Al-oxides/Ti-oxides multilayers prepared by atomic layer deposition in high aspect ratio trenches. In the latter case we show more than 1:20 aspect ratio structures can be achieved....

Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

Science.gov (United States)

Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

2017-12-01

This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

Analysis of biodiesel and biodiesel-petrodiesel blends by high performance thin layer chromatography combined with easy ambient sonic-spray ionization mass spectrometry.

Science.gov (United States)

Eberlin, Livia S; Abdelnur, Patricia V; Passero, Alan; de Sa, Gilberto F; Daroda, Romeu J; de Souza, Vanderlea; Eberlin, Marcos N

2009-08-01

High performance thin layer chromatography (HPTLC) combined with on-spot detection and characterization via easy ambient sonic-spray ionization mass spectrometry (EASI-MS) is applied to the analysis of biodiesel (B100) and biodiesel-petrodiesel blends (BX). HPTLC provides chromatographic resolution of major components whereas EASI-MS allows on-spot characterization performed directly on the HPTLC surface at ambient conditions. Constituents (M) are detected by EASI-MS in a one component-one ion fashion as either [M + Na](+) or [M + H](+). For both B100 and BX samples, typical profiles of fatty acid methyl esters (FAME) detected as [FAME + Na](+) ions allow biodiesel typification. The spectrum of the petrodiesel spot displays a homologous series of protonated alkyl pyridines which are characteristic for petrofuels (natural markers). The spectrum for residual or admixture oil spots is characterized by sodiated triglycerides [TAG + Na](+). The application of HPTLC to analyze B100 and BX samples and its combination with EASI-MS for on-spot characterization and quality control is demonstrated.

Fabrication and research of high purity germanium detectors with abrupt and thin diffusion layer

International Nuclear Information System (INIS)

Rodriguez Cabal, A. E.; Diaz Garcia, A.

1997-01-01

A different high purity germanium detector's fabrication method is described. A very thin diffusion film with an abrupt change of the type of conductivity is obtained. The fine diffusion layer thickness makes possibly their utilization in experimental systems in which all the data are elaborated directly on the computer. (author) [es

A novel high-performance thin layer chromatography method for quantification of long chain aliphatic hydrocarbons from Cissus quadrangularis

Directory of Open Access Journals (Sweden)

Vandana Jain

2016-08-01

Full Text Available Context: A high-performance thin layer chromatography (HPTLC is an analytical technique, which can be used for the determination of constituents or marker components in various parts of the plants. Earlier studies have estimated phytoconstituents from the stem and other aerial plant parts of Cissus quadrangularis Linn. Estimation of hydrocarbons can also be successfully done using HPTLC technique using suitable derivatization. Aims: To develop and validate a simple and rapid method for the estimation of long chain aliphatic hydrocarbons from the leaves of C. quadrangularis using HPTLC technique. Methods: Precoated silica gel 60 F254 plates were used as stationary phase. The mobile phase used was hexane (100 %. The detection of spots was carried out using berberine sulphate as detecting reagent. Results: The method was validated in terms of linearity, sensitivity, accuracy, and precision. Linearity range was found to be 2-10 µg/mL, limit of detection 0.127 µg/mL, and limit of quantification 0.384 µg/mL. Conclusions: A novel, simple, accurate, precise and sensitive HPTLC method has been developed and validated for the estimation of long chain aliphatic hydrocarbons obtained from the leaves of C. quadrangularis Linn.

Forensic Analysis of Blue Ball point Pen Inks on Questioned Documents by High Performance Thin Layer Chromatography Technique (HPTLC)

International Nuclear Information System (INIS)

Lee, L.C.; Siti Mariam Nunurung; Abdul Aziz Ishak

2014-01-01

Nowadays, crimes related to forged documents are increasing. Any erasure, addition or modification in the document content always involves the use of writing instrument such as ball point pens. Hence, there is an evident need to develop a fast and accurate ink analysis protocol to solve this problem. This study is aimed to determine the discrimination power of high performance thin layer chromatography (HPTLC) technique for analyzing a set of blue ball point pen inks. Ink samples deposited on paper were extracted using methanol and separated via a solvent mixture of ethyl acetate, methanol and distilled water (70: 35: 30, v/ v/ v). In this method, the discrimination power of 89.40 % was achieved, which confirm that the proposed method was able to differentiate a significant number of pen-pair samples. In addition, composition of blue pen inks was found to be homogeneous (RSD < 2.5 %) and the proposed method showed good repeatability and reproducibility (RSD < 3. 0%). As a conclusion, HPTLC is an effective tool to separate blue ball point pen inks. (author)

Stability indicating high performance thin layer chromatographic method for quantitation of venlafaxine in bulk and pharmaceutical dosage form

Directory of Open Access Journals (Sweden)

Sunil K Dubey

2015-01-01

Full Text Available Background: Venlafaxine (VEN is a phenethylamine bicyclic compound, chemically, 1-(2-[dimethyl amino]-1-[4-methoxy phenyl] ethyl cyclo-hexan-1ol hydrochloride. It is a antidepressant. It inhibits the reuptake of serotonin, nor adrenaline and dopamine to a lesser extent at the presynaptic membrane. Aim: A simple, rapid, precise, accurate, and economical high performance thin layer chromatographic (HPTLC method has been developed and validated for the determination of VEN both as a bulk drug and in formulation. Materials and Methods: The method uses aluminum plates precoated with silica gel 60 F254 as the stationary phase and dichloromethane:acetonitrile:N-hexane:triethylamine: 0.5:0.5:4:0.7 (v/v/v/v as mobile phase. Results: This system gave compact spots for VEN (R f = 0.46 ± 0.05. Forced degradation studies were done by subjecting VEN to acid and alkali hydrolysis, oxidation, and reduction. The peak of the degradation product was well resolved from that of the pure drug and had significant different R f values. Analysis of VEN was performed in the absorbance mode at 225 nm. The limit of detection and quantification were 12.48 and 37.81 ng/spot respectively. Conclusions: The developed method was validated and found to be simple, specific, accurate and precise and can be used for routine quality control analysis of VEN in bulk and pharmaceutical formulation.

Thin-layer chromatography coupled with high performance liquid chromatography for determining tetrabromobisphenol A/S and their derivatives in soils.

Science.gov (United States)

Liu, Aifeng; Shen, Zhaoshuang; Tian, Yong; Shi, Rongguang; Liu, Yi; Zhao, Zongshan; Xian, Mo

2017-12-01

As brominated flame retardants (BFRs), tetrabromobisphenol A/S (TBBPA/S) and their derivatives have raised wide concerns owing to their widely usage, distributions and adverse effects on human health, thus monitoring these BFRs was urgently needed. In this study, a rapid and cost-effective method based on thin-layer chromatography (TLC) sample pre-treatment coupled with high performance liquid chromatography-diode array detector (HPLC-DAD) (UV=214nm) was developed for determining TBBPA/S and their derivatives in soils, including TBBPA, TBBPA bis(allyl ether) (TBBPA-BAE), TBBPA bis(2,3-dibromopropyl ether) (TBBPA-BDBPE), TBBPS bis(allyl ether) (TBBPS-BAE) and TBBPS bis(2,3-dibromopropyl ether) (TBBPS-BDBPE). The method detection limits (MDLs) and the method quantification limits (MQLs) for these BFRs ranged from 0.023 to 0.087μgg -1 dw and 0.076-0.29μgg -1 dw, respectively. The recoveries were 41-108% and both RSD of repeatability and intermediate precision were less than 11%. The developed method presented good performance for analyzing natural soil samples collected from BFRs industrial park, suggesting its great application potential for monitoring environmental TBBPA/S and their derivatives. Copyright © 2017 Elsevier B.V. All rights reserved.

Studies of void growth in a thin ductile layer between ceramics

DEFF Research Database (Denmark)

Tvergaard, Viggo

1997-01-01

The growth of voids in a thin ductile layer between ceramics is analysed numerically, using an axisymmetric cell model to represent an array of uniformly distributed spherical voids at the central plane of the layer. The purpose is to determine the full traction-separation law relevant to crack...... growth by a ductile mechanism along the thin layer. Plastic flow in the layer is highly constrained by the ceramics, so that a high. level of triaxial tension develops, leading in some cases to cavitation instabilities. The computations are continued to a state near the occurrence of void coalescence....

Identification of Ginkgo biloba supplements adulteration using high performance thin layer chromatography and ultra high performance liquid chromatography-diode array detector-quadrupole time of flight-mass spectrometry.

Science.gov (United States)

Avula, Bharathi; Sagi, Satyanarayanaraju; Gafner, Stefan; Upton, Roy; Wang, Yan-Hong; Wang, Mei; Khan, Ikhlas A

2015-10-01

Ginkgo biloba is one of the most widely sold herbal supplements and medicines in the world. Its popularity stems from having a positive effect on memory and the circulatory system in clinical studies. As ginkgo popularity increased, non-proprietary extracts were introduced claiming to have a similar phytochemical profile as the clinically tested extracts. The standardized commercial extracts of G. biloba leaf used in ginkgo supplements contain not less than 6% sesquiterpene lactones and 24% flavonol glycosides. While sesquiterpene lactones are unique constituents of ginkgo leaf, the flavonol glycosides are found in many other botanical extracts. Being a high value botanical, low quality ginkgo extracts may be subjected to adulteration with flavonoids to meet the requirement of 24% flavonol glycosides. Chemical analysis by ultra high performance liquid chromatography-mass spectrometry revealed that adulteration of ginkgo leaf extracts in many of these products is common, the naturally flavonol glycoside-rich extract being spiked with pure flavonoids or extracts made from another flavonoid-rich material, such as the fruit/flower of Japanese sophora (Styphnolobium japonicum), which also contains the isoflavone genistein. Recently, genistein has been proposed as an analytical marker for the detection of adulteration of ginkgo extracts with S. japonicum. This study confirms that botanically authenticated G. biloba leaf and extracts made therefrom do not contain genistein, and the presence of which even in trace amounts is suggestive of adulteration. In addition to the mass spectrometric approach, a high performance thin layer chromatography method was developed as a fast and economic method for chemical fingerprint analysis of ginkgo samples.

Corrosion of pure magnesium under thin electrolyte layers

International Nuclear Information System (INIS)

Zhang Tao; Chen Chongmu; Shao Yawei; Meng Guozhe; Wang Fuhui; Li Xiaogang; Dong Chaofang

2008-01-01

The corrosion behavior of pure magnesium was investigated by means of cathodic polarization curve, electrochemical impedance spectroscopy (EIS) and electrochemical noise (EN) under aerated and deaerated thin electrolyte layers (TEL) with various thicknesses. Based on shot noise theory and stochastic theory, the EN results were quantitatively analyzed by using the Weibull and Gumbel distribution function, respectively. The results show that the cathodic process of pure magnesium under thin electrolyte layer was dominated by hydrogen reduction. With the decreasing of thin electrolyte layer thickness, cathodic process was retarded slightly while the anodic process was inhibited significantly, which indicated that both the cathodic and anodic process were inhibited in the presence of oxygen. The absence of oxygen decreased the corrosion resistance of pure magnesium in case of thin electrolyte layer. The corrosion was more localized under thin electrolyte layer than that in bulk solution. The results also demonstrate that there exist two kinds of effects for thin electrolyte layer on the corrosion behavior of pure magnesium: (1) the rate of pit initiation was evidently retarded compared to that in bulk solution; (2) the probability of pit growth oppositely increased. The corrosion model of pure magnesium under thin electrolyte layer was suggested in the paper

Two-dimensional high-performance thin-layer chromatography of tryptic bovine albumin digest using normal- and reverse-phase systems with silanized silica stationary phase.

Science.gov (United States)

Gwarda, Radosław Łukasz; Dzido, Tadeusz Henryk

2013-10-18

Among many advantages of planar techniques, two-dimensional (2D) separation seems to be the most important for analysis of complex samples. Here we present quick, simple and efficient two-dimensional high-performance thin-layer chromatography (2D HPTLC) of bovine albumin digest using commercial HPTLC RP-18W plates (silica based stationary phase with chemically bonded octadecyl ligands of coverage density 0.5μmol/m(2) from Merck, Darmstadt). We show, that at low or high concentration of water in the mobile phase comprised methanol and some additives the chromatographic systems with the plates mentioned demonstrate normal- or reversed-phase liquid chromatography properties, respectively, for separation of peptides obtained. These two systems show quite different separation selectivity and their combination into 2D HPTLC process provides excellent separation of peptides of the bovine albumin digest. Copyright © 2013 Elsevier B.V. All rights reserved.

A simple and rapid method for the determination of taxol produced by fungal endophytes from medicinal plants using high performance thin layer chromatography.

Science.gov (United States)

Gangadevi, V; Muthumary, J

2008-01-01

Taxol is an important anticancer drug used widely in the clinical field. In this study, some endophytic fungi were isolated from selected medicinal plants, and were screened for their potential in the production of taxol, using a rapid separation technique of high performance thin layer chromatography (HPTLC). Of the 20 screened fungi, only 13 fungal species produced taxol in the artificial culture medium. The results of HPTLC showed that the 13 fungal species had identical ultraviolet (UV) characteristics, positive reactivity with a spray reagent, yielding a blue spot, which turned to dark gray after 24 hours, and had Rf values identical to that of the authentic taxol. The amount of taxol was also quantified by comparing the peak area and the peak height of the fungal samples with those of authentic taxol.

Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds

Science.gov (United States)

Watanabe, Hitoshi; Mihara, Takashi; Yoshimori, Hiroyuki; Araujo, Carlos

1995-09-01

Ferroelectric thin films of bismuth layer structured compounds, SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method. X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films. XRD results of SrBi2(Ta1- x, Nb x)2O9 films (0≤x≤1) showed that niobium ions substitute for tantalum ions in an arbitrary ratio without any change of the layer structure and lattice constants. Furthermore, XRD results of SrBi2 xTa2O9 films (0≤x≤1.5) indicated that the formation of the bismuth layer structure does not always require an accurate bismuth content. The layer structure was formed above 50% of the stoichiometric bismuth content in the general formula. SrBi2(Ta1- x, Nb x)2O9 films with various Ta/Nb ratios have large enough remanent polarization for nonvolatile memory application and have shown high fatigue resistance against 1011 cycles of full switching of the remanent polarization. Mixture films of the three compounds were also investigated.

High Performance Thin Layer Chromatography method for analysis of 3,4-methylenedioxymethamphetamine in seized tablets

Directory of Open Access Journals (Sweden)

Boris E. Duffau

2015-12-01

Full Text Available Context: Consumption of synthetic drugs had increased in recent years, used as a recreational drug by young people who presume that consumption of this drug is harmless for health; however clinical studies have shown that this stimulant and its metabolites are toxic. Due to these reasons, chemical analysis of this illicit drug is crucial from the points of view of occupational medicine, toxicology, and law enforcement with the aim of pursuit the traffic of illegal drug. Aims: Implement and fully validate a rapid and simple method for detection and quantitation of MDMA by High-Performance Thin Layer Chromatography in seized samples. Methods: With the implemented method was analyzed 12 positive samples seized by Chilean police, to found the concentration of MDMA in ecstasy tablets. Results: The method was fully validated, the linearity of the method was evaluated by the calibration curve between 51.0 – 510.0 µg/band (R2 0.9977; limit of detection was 12.1 µg per band, and limit of quantitation was 36.8 µg per band. The precision of the method (RSD was lower than 5.0%. Accuracy was evaluated by determination of the percentage of MDMA recovered by the assay (99.13%, and relative Uncertainty was 6.66%. With this method, it was analyzed real seized samples of MDMA, results showed that all samples contained MDMA and concentration was between 18.15 – 59.84 % w/w. Conclusions: The method is selective, sensitive, and specific, with possible application in forensic analysis. To the best of our knowledge, this is the first report about concentration of MDMA in ecstasy pills in Chile.

Preparation and recording characteristics of granular-type perpendicular magnetic recording media with thin intermediate layer

International Nuclear Information System (INIS)

Shintaku, K.; Kiya, T.

2008-01-01

Granular-type media with thin Ru intermediate layer were prepared on a highly oriented high-B s FeCo soft underlayer (SUL). A CoPt-TiO 2 recording layer on a Ru intermediate layer of only 2 nm had high-crystal orientation, high H c of 6.5 kOe, and a high squareness ratio (SQ) of 0.99. The magnetic property of the SUL was also good. The recording performance was measured for the media with different Ru intermediate thicknesses by using a single-pole-type (SPT) head. The media had large reproduced output even for the Ru intermediate layer thickness of 2 nm

Preparation and recording characteristics of granular-type perpendicular magnetic recording media with thin intermediate layer

Energy Technology Data Exchange (ETDEWEB)

Shintaku, K. [Akita Research Institute of Advanced Technology, Akita Prefectural R and D Center, 4-21 Sanuki, Araya, Akita 010-1623 (Japan)], E-mail: shintaku@ait.pref.akita.jp; Kiya, T. [Akita Research Institute of Advanced Technology, Akita Prefectural R and D Center, 4-21 Sanuki, Araya, Akita 010-1623 (Japan)

2008-11-15

Granular-type media with thin Ru intermediate layer were prepared on a highly oriented high-B{sub s} FeCo soft underlayer (SUL). A CoPt-TiO{sub 2} recording layer on a Ru intermediate layer of only 2 nm had high-crystal orientation, high H{sub c} of 6.5 kOe, and a high squareness ratio (SQ) of 0.99. The magnetic property of the SUL was also good. The recording performance was measured for the media with different Ru intermediate thicknesses by using a single-pole-type (SPT) head. The media had large reproduced output even for the Ru intermediate layer thickness of 2 nm.

Quantitative Determination of L-DOPA in Seeds of Mucuna Pruriens Germplasm by High Performance Thin Layer Chromatography.

Science.gov (United States)

Raina, Archana P; Khatri, Renu

2011-07-01

Mucuna pruriens Linn. is an important medicinal plant used for treatment of Parkinson's disease and many others in ancient Indian medical system. L-DOPA extracted from seeds of Mucuna is a constituent of more than 200 indigenous drug formulations and is more effective as drug than the synthetic counterpart. A densitometric high performance thin-layer chromatographic (HPTLC) method was developed for quantification of L-DOPA content present in the seeds extract. The method involves separation of L-DOPA on precoated silica gel 60 GF(254) HPTLC plates using a solvent system of n-butanol-acetic-acid-water (4:1:1, v/v) as the mobile phase. Quantification was done at 280 nm using absorbance reflectance mode. Linearity was found in the concentration range of 100 to 1000 ng/spot with the correlation coefficient value of 0.9980. The method was validated for accuracy, precision and repeatability. Mean recovery was 100.89%. The LOD and LOQ for L-DOPA determination were found to be 3.41 ng/spot and 10.35 ng/spot respectively. The proposed HPTLC method was found to be precise, specific and accurate for quantitative determination of L-DOPA. It can be used for rapid screening of large germplasm collections of Mucuna pruriens for L-DOPA content. The method was used to study variation in fifteen accessions of Mucuna germplasm collected from different geographical regions.

Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

Science.gov (United States)

Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

2016-05-04

Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

Optical characterizations of silver nanoprisms embedded in polymer thin film layers

Science.gov (United States)

Carlberg, Miriam; Pourcin, Florent; Margeat, Olivier; Le Rouzo, Judikael; Berginc, Gerard; Sauvage, Rose-Marie; Ackermann, Jorg; Escoubas, Ludovic

2017-10-01

The precise control of light-matter interaction has a wide range of applications and is currently driven by the use of nanoparticles (NPs) by the recent advances in nanotechnology. Taking advantage of the material, size, shape, and surrounding media dependence of the optical properties of plasmonic NPs, thin film layers with tunable optical properties are achieved. The NPs are synthesized by wet chemistry and embedded in a polyvinylpyrrolidone (PVP) polymer thin film layer. Spectrophotometer and spectroscopic ellipsometry measurements are coupled to finite-difference time domain numerical modeling to optically characterize the heterogeneous thin film layers. Silver nanoprisms of 10 to 50 nm edge size exhibit high absorption through the visible wavelength range. A simple optical model composed of a Cauchy law and a Lorentz law, accounting for the optical properties of the nonabsorbing polymer and the absorbing property of the nanoprisms, fits the spectroscopic ellipsometry measurements. Knowing the complex optical indices of heterogeneous thin film layers let us design layers of any optical properties.

Characterization of the porosity of silicon nitride thin layers by Electrochemical Impedance Spectroscopy

International Nuclear Information System (INIS)

Barrès, T.; Tribollet, B.; Stephan, O.; Montigaud, H.; Boinet, M.; Cohin, Y.

2017-01-01

Silicon nitride thin films are widely used as diffusion barriers within stacks in the glass industry but turn out to be porous at the nanometric scale. EIS measurements were conducted on SiNx thin layers deposited on a gold layer. An electrochemical model was established to fit the EIS measurements making use of data from other complementary techniques. In particular, Transmission Electron Microscopy was performed on these thin layers to determine the diameter and the qualitative morphology of the pores. A quantitative determination of the through-porosity of the layer was deduced from the EIS model and was in good agreement with TEM measurements. Moreover, combining EIS with local observations enabled inhomogeneities in the layer to be probed by highlighting a specific region in the layer.

Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

International Nuclear Information System (INIS)

Finger, F.; Astakhov, O.; Bronger, T.; Carius, R.; Chen, T.; Dasgupta, A.; Gordijn, A.; Houben, L.; Huang, Y.; Klein, S.; Luysberg, M.; Wang, H.; Xiao, L.

2009-01-01

Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

Science.gov (United States)

Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

2013-03-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

International Nuclear Information System (INIS)

Li Na; Chen Fei; Shen Qiang; Wang Chuanbin; Zhang Lianmeng

2013-01-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Determination of caffeine, theobromine and theophylline in Mate beer and Mate soft drinks by high-performance thin-layer chromatography.

Science.gov (United States)

Oellig, Claudia; Schunck, Jacob; Schwack, Wolfgang

2018-01-19

Mate beer and Mate soft drinks are beverages produced from the dried leaves of Ilex paraguariensis (Yerba Mate). In Yerba Mate, the xanthine derivatives caffeine, theobromine and theophylline, also known as methylxanthines, are important active components. The presented method for the determination of caffeine, theobromine and theophylline in Mate beer and Mate soft drinks by high-performance thin-layer chromatography with ultraviolet detection (HPTLC-UV) offers a fully automated and sensitive determination of the three methylxanthines. Filtration of the samples was followed by degassing, dilution with acetonitrile in the case of Mate beers for protein precipitation, and centrifugation before the extracts were analyzed by HPTLC-UV on LiChrospher silica gel plates with fluorescence indicator and acetone/toluene/chloroform (4:3:3, v/v/v) as the mobile phase. For quantitation, the absorbance was scanned at 274nm. Limits of detection and quantitation were 1 and 4ng/zone, respectively, for caffeine, theobromine and theophylline. With recoveries close to 100% and low standard deviations reliable results were guaranteed. Experimental Mate beers as well as Mate beers and Mate soft drinks from the market were analyzed for their concentrations of methylxanthines. Copyright © 2017 Elsevier B.V. All rights reserved.

Detection and Estimation of alpha-Amyrin, beta-Sitosterol, Lupeol, and n-Triacontane in Two Medicinal Plants by High Performance Thin Layer Chromatography

Directory of Open Access Journals (Sweden)

Saikat S. Mallick

2014-01-01

Full Text Available A normal phase high performance thin layer chromatography (HPTLC method has been developed and validated for simultaneous estimation of four components, namely, alpha-amyrin, beta-sitosterol, lupeol, and n-triacontane from two medicinally important plants, Leptadenia reticulata Wight & Arn. and Pluchea lanceolata (DC. CB. Clarke. In Ayurveda, both plants have been reported to possess immunomodulatory activity. Chromatographic separation of the four components from the methanolic extracts of whole plant powders of Leptadenia reticulata Wight & Arn. and Pluchea lanceolata (DC. CB. Clarke. was performed on TLC aluminium plates precoated with silica gel 60F254 using a suitable mobile phase. The densitometric scanning was done after derivatization at λ = 580 nm for α-amyrin, β-sitosterol, and lupeol, and at 366 nm for n-triacontane. The developed HPTLC method has been validated and used for simultaneous quantitation of the four components from the methanolic extracts of whole plant powders of Leptadenia reticulata Wight & Arn. and Pluchea lanceolata (DC. CB. Clarke. The developed HPTLC method is simple, rapid, and precise and can be used for routine quality control.

Crystalline Molybdenum Oxide Thin-Films for Application as Interfacial Layers in Optoelectronic Devices

DEFF Research Database (Denmark)

Fernandes Cauduro, André Luis; dos Reis, Roberto; Chen, Gong

2017-01-01

The ability to control the interfacial properties in metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties and thus their integration in novel optoelectronic devices. This is exemplified in photovoltaic devices based on organic, inorganic...... or hybrid technologies, where precise control of the charge transport properties through the interfacial layer is highly important for improving device performance. In this work, we study the effects of in situ annealing in nearly stoichiometric MoOx (x ∼ 3.0) thin-films deposited by reactive sputtering. We...... with structural characterizations, this work addresses a novel method for tuning, and correlating, the optoelectronic properties and microstructure of device-relevant MoOx layers....

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

Science.gov (United States)

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Simple Thin Layer Chromatography Method for Separation of Selected Natural Steroid Hormones

International Nuclear Information System (INIS)

Nowakowska, J.; Rudnicka-Litka, K.; Ciura, K.; Pikul, P.; Piotrowicz, J.

2015-01-01

Chromatographic properties of seven steroids: estrogens (β-estradiol and estrone), androgens (testosterone, methyltestosterone, trans-androsterone), progesterone and cholesterol have been studied by planar chromatography with usage of High Performance Thin Layer Chromatography (HPTLC) and Thin Layer Chromatography (TLC) plates. Normal, reversed and cyano-bonded silica stationary phases were tested with five binary mobile phases (acetonitrile-water, acetonitrile-DMSO, acetonitrile-methanol, acetone-petroleum ether, acetone-water) in which the concentration of organic modifier varied from 0 to 100 % (v/v). This study reports the optimization of steroid hormones separation. Principal Component Analysis (PCA) based on calculated molecular descriptors quantitatively differentiating solutes was performed in order to investigate the similarity and dissimilarity between tested compounds. The separation abilities of mobile and stationary phases were compared based on separation factor α. Chromatographic retention data and possible retention mechanisms also were discussed. (author)

Preparation of ultra-thin and high-quality WO{sub 3} compact layers and comparision of WO{sub 3} and TiO{sub 2} compact layer thickness in planar perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jincheng; Shi, Chengwu, E-mail: shicw506@foxmail.com; Chen, Junjun; Wang, Yanqing; Li, Mingqian

2016-06-15

In this paper, the ultra-thin and high-quality WO{sub 3} compact layers were successfully prepared by spin-coating-pyrolysis method using the tungsten isopropoxide solution in isopropanol. The influence of WO{sub 3} and TiO{sub 2} compact layer thickness on the photovoltaic performance of planar perovskite solar cells was systematically compared, and the interface charge transfer and recombination in planar perovskite solar cells with TiO{sub 2} compact layer was analyzed by electrochemical impedance spectroscopy. The results revealed that the optimum thickness of WO{sub 3} and TiO{sub 2} compact layer was 15 nm and 60 nm. The planar perovskite solar cell with 15 nm WO{sub 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. - Graphical abstract: The planar perovskite solar cell with 15 nm WO{sub 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. Display Omitted - Highlights: • Preparation of ultra-thin and high-quality WO{sub 3} compact layers. • Perovskite solar cell with 15 nm-thick WO{sub 3} compact layer achieved PCE of 10.14%. • Perovskite solar cell with 60 nm-thick TiO{sub 2} compact layer achieved PCE of 12.64%.

Characterization and obtainment of thin films based on N,N,N-trimethyl chitosan and heparin through the technical layer-by-layer

International Nuclear Information System (INIS)

Martins, Alessandro F.; Follmann, Heveline D.M.; Rubira, Adley F.; Muniz, Edvani C.

2011-01-01

Thin films of Heparin (HP) and N,N,N-trimethyl chitosan (TMC) with a high degree of quaternization (DQ) were obtained at pH 7.4 through the layer-by-layer (LbL) technique. Polystyrene (PS) was oxidized with aqueous solution of sodium persulfate and subsequently employed as substrate. The characterization of TMC and the respective determination of DQ were performed through 1 H NMR spectroscopy. The thin films de TMC/HP were characterized by FTIR-ATR and AFM. Both techniques confirmed the adsorption of TMC and HP in surface of the PS. The increasing of the bilayers provides a decrease of the projections and/or roughness, further of minimizing the depressions at the surface of the films. Studies of thin films the base of TMC/HP prepared from the LbL technique has not been reported in the literature. It is expected that the thin films of TMC/HP present anti-adhesive and antimicrobial properties. (author)

Effects of thin high-Z layers on the hydrodynamics of laser-accelerated plastic targets

International Nuclear Information System (INIS)

Obenschain, S.P.; Colombant, D.G.; Karasik, M.; Pawley, C.J.; Serlin, V.; Schmitt, A.J.; Weaver, J.L.; Gardner, J.H.; Phillips, L.; Aglitskiy, Y.; Chan, Y.; Dahlburg, J.P.; Klapisch, M.

2002-01-01

Experimental results and simulations that study the effects of thin metallic layers with high atomic number (high-Z) on the hydrodynamics of laser accelerated plastic targets are presented. These experiments employ a laser pulse with a low-intensity foot that rises into a high-intensity main pulse. This pulse shape simulates the generic shape needed for high-gain fusion implosions. Imprint of laser nonuniformity during start up of the low intensity foot is a well-known seed for hydrodynamic instability. Large reductions are observed in hydrodynamic instability seeded by laser imprint when certain minimum thickness gold or palladium layers are applied to the laser-illuminated surface of the targets. The experiment indicates that the reduction in imprint is at least as large as that obtained by a 6 times improvement in the laser uniformity. Simulations supported by experiments are presented showing that during the low intensity foot the laser light can be nearly completely absorbed by the high-Z layer. X rays originating from the high-Z layer heat the underlying lower-Z plastic target material and cause large buffering plasma to form between the layer and the accelerated target. This long-scale plasma apparently isolates the target from laser nonuniformity and accounts for the observed large reduction in laser imprint. With onset of the higher intensity main pulse, the high-Z layer expands and the laser light is transmitted. This technique will be useful in reducing laser imprint in pellet implosions and thereby allow the design of more robust targets for high-gain laser fusion

Highly stable thin film transistors using multilayer channel structure

KAUST Repository

Nayak, Pradipta K.; Wang, Zhenwei; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

2015-01-01

We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured

Layer-by-layer assembly of thin film oxygen barrier

International Nuclear Information System (INIS)

Jang, Woo-Sik; Rawson, Ian; Grunlan, Jaime C.

2008-01-01

Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation ( 2 /day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging

Recent Advances in Gas Barrier Thin Films via Layer-by-Layer Assembly of Polymers and Platelets.

Science.gov (United States)

Priolo, Morgan A; Holder, Kevin M; Guin, Tyler; Grunlan, Jaime C

2015-05-01

Layer-by-layer (LbL) assembly has emerged as the leading non-vacuum technology for the fabrication of transparent, super gas barrier films. The super gas barrier performance of LbL deposited films has been demonstrated in numerous studies, with a variety of polyelectrolytes, to rival that of metal and metal oxide-based barrier films. This Feature Article is a mini-review of LbL-based multilayer thin films with a 'nanobrick wall' microstructure comprising polymeric mortar and nano-platelet bricks that impart high gas barrier to otherwise permeable polymer substrates. These transparent, water-based thin films exhibit oxygen transmission rates below 5 × 10(-3) cm(3) m(-2) day(-1) atm(-1) and lower permeability than any other barrier material reported. In an effort to put this technology in the proper context, incumbent technologies such as metallized plastics, metal oxides, and flake-filled polymers are briefly reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparative Study on Interface Elements, Thin-Layer Elements, and Contact Analysis Methods in the Analysis of High Concrete-Faced Rockfill Dams

Directory of Open Access Journals (Sweden)

Xiao-xiang Qian

2013-01-01

Full Text Available This paper presents a study on the numerical performance of three contact simulation methods, namely, the interface element, thin-layer element, and contact analysis methods, through the analysis of the contact behavior between the concrete face slab and the dam body of a high concrete-faced rockfill dam named Tianshengqiao-I in China. To investigate the accuracy and limitations of each method, the simulation results are compared in terms of the dam deformation, contact stress along the interface, stresses in the concrete face slab, and separation of the concrete face slab from the cushion layer. In particular, the predicted dam deformation and slab separation are compared with the in-situ observation data to classify these methods according to their agreement with the in-situ observations. It is revealed that the interface element and thin-layer element methods have their limitations in predicting contact stress, slab separation, and stresses in the concrete face slab if a large slip occurs. The contact analysis method seems to be the best choice whether the separation is finite or not.

Crystallinity Improvement of Zn O Thin Film on Different Buffer Layers Grown by MBE

International Nuclear Information System (INIS)

Shao-Ying, T.; Che-Hao, L.; Wen-Ming, Ch.; Yang, C.C.; Po-Ju, Ch.; Hsiang-Chen, W.; Ya-Ping, H.

2012-01-01

The material and optical properties of Zn O thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the Zn O layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality Zn O thin film growth. A Ga N buffer layer slightly increased the quality of the Zn O thin film, but the threading dislocations still stretched along the c-axis of the Ga N layer. The use of Mg O as the buffer layer decreased the surface roughness of the Zn O thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality Zn O thin film growth.

Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

Directory of Open Access Journals (Sweden)

Shao-Ying Ting

2012-01-01

Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

Thin layer activation

International Nuclear Information System (INIS)

Schweickert, H.; Fehsenfeld, P.

1995-01-01

The reliability of industrial equip ment is substantially influenced by wear and corrosion; monitoring can prevent accidents and avoid down-time. One powerful tool is thin layer activation analysis (TLA) using accelerator systems. The information is used to improve mechanical design and material usage; the technology is used by many large companies, particularly in the automotive industry, e.g. Daimler Benz. A critical area of a machine component receives a thin layer of radioactivity by irradiation with charged particles from an accelerator - usually a cyclotron. The radioactivity can be made homogeneous by suitable selection of particle, beam energy and angle of incidence. Layer thickness can be varied from 20 microns to around 1 mm with different depth distributions; the position and size of the wear zone can be set to within 0.1 mm. The machine is then reassembled and operated so that wear can be measured. An example is a combustion engine comprising piston ring, cylinder wall, cooling water jacket and housing wall, where wear measurements on the cylinder wall are required in a critical zone around the dead-point of the piston ring. Proton beam bombardment creates a radioactive layer whose thickness is known accurately, and characteristic gamma radiation from this radioactive zone penetrates through the engine and is detected externally. Measurements can be made either of the activity removed from the surface, or of the (reduced) residual activity; wear measurement of the order of 10 -9 metres is possible

High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

KAUST Repository

Nayak, Pradipta K.

2012-05-16

Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

Science.gov (United States)

Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

2014-09-01

Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm2/V s. The unidirectional shift of turn-on voltage (Von) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (VP/VE) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm2/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the VP/VE of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional Von shift. As a result, an enlarged memory window of 28.6 V at the VP/VE of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

Qualitative and quantitative two-dimensional thin-layer chromatography/high performance liquid chromatography/diode-array/electrospray-ionization-time-of-flight mass spectrometry of cholinesterase inhibitors.

Science.gov (United States)

Mroczek, Tomasz

2016-09-10

Recently launched thin-layer chromatography-mass spectrometry (TLC-MS) interface enabling extraction of compounds directly from TLC plates into MS ion source was unusually extended into two-dimensional thin-layer chromatography/high performance liquid chromatography (2D, TLC/HPLC) system by its a direct connection to a rapid resolution 50×2.1mm, I.D. C18 column compartment followed by detection by diode array (DAD) and electrospray ionisation time-of-flight mass spectrometry (ESI-TOF-MS). In this way, even not separated bands of complicated mixtures of natural compounds could be analysed structurally, only within 1-2min after development of TLC plates. In comparison to typically applied TLC-MS interface, no ion suppression for acidic mobile phases was observed. Also, substantial increase in ESI-TOF-MS sensitivities and quality of spectra, were noticed. It has been utilised in combination with TLC- based bioautographic approaches of acetylcholinesterase (AChE) inhibitors, However, it can be also applied in any other procedures related to bioactivity (e.g. 2,2-Diphenyl-1-picryl-hydrazyl-DPPH screen test for radicals). This system has been also used for determination of half maximal inhibitory concentration (IC50 values) of the active inhibitor-galanthamine, as an example. Moreover, AChE inhibitory potencies of some of purified plant extracts, never studied before, have been quantitatively measured. This is first report of usage such the 2D TLC/HPLC/MS system both for qualitative and quantitative evaluation of cholinesterase inhibitors in biological matrices. Copyright © 2016 Elsevier B.V. All rights reserved.

High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

Science.gov (United States)

Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

2016-11-02

Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

Experimental investigations of sandwich panels using high performance concrete thin plates exposed to fire

DEFF Research Database (Denmark)

Hulin, Thomas; Hodicky, Kamil; Schmidt, Jacob Wittrup

2015-01-01

Structural sandwich panels using thin high performance concrete (HPC) plates offer a possibility to address the modern environmental challenges faced by the construction industry. Fire resistance is a major necessity in structures using HPC. This paper presents experimental studies at elevated...... temperatures for panels with 30 mm thick plates stiffened by structural ribs, thick insulation layers, and steel shear connecting systems. Parametric variation assessing the role of each component of the sandwich structure was performed on unloaded specimens of reduced size. Full size walls were tested...... with load. Tests were performed in standard furnaces, following the conditions of REI certification tests. Unloaded specimens successfully passed tests. Loaded specimens met the R and I requirements, failing E due to sustained flaming of the insulation. They exhibited multiple cracking of their exposed...

(AJST) THIN- LAYER DRYING OF DICED CASSAVA ROOTS

African Journals Online (AJOL)

opiyo

effect of drying temperature on thin-layer drying was high, followed by initial moisture .... The moisture content was converted to moisture ratio (MR) using the non-exponential part .... The Potential of Cassava As a Cash. Crop For Small Holder ...

Sputter Deposited TiOx Thin-Films as Electron Transport Layers in Organic Solar Cells

DEFF Research Database (Denmark)

Mirsafaei, Mina; Bomholt Jensen, Pia; Lakhotiya, Harish

transparency and favorable energy-level alignment with many commonly used electron-acceptor materials. There are several methods available for fabricating compact TiOx thin-films for use in organic solar cells, including sol-gel solution processing, spray pyrolysis and atomic-layer deposition; however...... of around 7%, by incorporating sputter deposited TiOx thin-films as electron-transport and exciton-blocking layers. In the work, we report on the effect of different TiOx deposition temperatures and thicknesses on the organic-solar-cell device performance. Besides optical characterization, AFM and XRD...... analyses are performed to characterize the morphology and crystal structure of the films, and external quantum efficiency measurements are employed to shed further light on the device performance. Our study presents a novel method for implementation of TiOx thin-films as electron-transport layer in organic...

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Yu-Kuang Liao

2017-04-01

Full Text Available Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD and chemical bath deposition (CBD as used by the Cu(In,GaSe2 (CIGS thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.

Science.gov (United States)

Franklin, Aaron D

2015-08-14

For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices. Copyright © 2015, American Association for the Advancement of Science.

A high performance ceria based interdiffusion barrier layer prepared by spin-coating

DEFF Research Database (Denmark)

Plonczak, Pawel; Joost, Mario; Hjelm, Johan

2011-01-01

A multiple spin-coating deposition procedure of Ce0.9Gd0.1O1.95 (CGO) for application in solid oxide fuel cells (SOFCs) was developed. The thin and dense CGO layer can be employed as a barrier layer between yttria stabilised zirconia (YSZ) electrolyte and a (La, Sr)(Co, Fe)O3 based cathode....... The decomposition of the polymer precursor used in the spin-coating process was studied. The depositions were performed on anode supported half cells. By controlling the sintering temperature between each spin-coating process, dense and crack-free CGO films with a thickness of approximately 1 μm were obtained....... The successive steps of dense layer production was investigated by scanning electron microscopy. X-ray diffraction was employed to monitor the crystal structure of the CGO layer sintered at different temperatures. The described spin coated barrier layer was evaluated using an anode supported cell...

Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

International Nuclear Information System (INIS)

Wang, Wei; Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

2014-01-01

Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm 2 /V s. The unidirectional shift of turn-on voltage (V on ) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V P /V E ) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm 2 /V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V P /V E of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V on shift. As a result, an enlarged memory window of 28.6 V at the V P /V E of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

Growth of thin film containing high density ZnO nanorods with low temperature calcinated seed layer

Science.gov (United States)

Panda, Rudrashish; Samal, Rudranarayan; Khatua, Lizina; Das, Susanta Kumar

2018-05-01

In this work we demonstrate the growth of thin film containing high density ZnO nanorods by using drop casting of the seed layer calcinated at a low temperature of 132 °C. Chemical bath deposition (CBD) method is used to grow the nanorods. X-ray diffraction (XRD) analysis and Field Emission Scanning Electron Microscopy (FESEM) are performed for the structural and morphological characterizations of the nanorods. The average diameter and length of nanorods are found to be 33 nm and 270 nm respectively. The bandgap of the material is estimated to be 3.2 eV from the UV-Visible absorption spectroscopy. The reported method is much more cost-effective and can be used for growth of ZnO nanorods for various applications.

Low-Dimensional Nanomaterials as Active Layer Components in Thin-Film Photovoltaics

Science.gov (United States)

Shastry, Tejas Attreya

to result in record breaking performance in a carbon nanotube solar cell, and subsequent chapters study the mechanisms behind charge transfer in the polychiral carbon nanotube / fullerene solar cell. Further processing advances, chiral distribution tailoring, and solvent additives are shown to enable more uniform and larger area carbon nanotube solar cells while maintaining record-breaking performance. In order to increase overall photovoltaic performance of a carbon nanotube active layer solar cell, this dissertation also demonstrates a ternary polymer-carbon nanotube-small molecule photovoltaic with high efficiency and stability enabled by the nanomaterial. Finally, the use of the two-dimensional metal dichalcogenide molybdenum disulfide as a photovoltaic material is explored in an ultrathin solar cell with higher efficiency per thickness than leading organic and inorganic thin-film photovoltaics. Overall, this work demonstrates breakthroughs in utilizing low-dimensional nanomaterials as active layer components in photovoltaics and will inform ongoing research in making ultrathin, stable, efficient solar cells.

SEM and XPS study of layer-by-layer deposited polypyrrole thin films

Science.gov (United States)

Pigois-Landureau, E.; Nicolau, Y. F.; Delamar, M.

1996-01-01

Layer-by-layer deposition of thin films (a few nm) of polypyrrole was carried out on various substrates such as silver, platinum, electrochemically oxidized aluminum and pretreated glass. SEM micrographs showed that the deposited layers nucleate by an island-type mechanism on hydrated alumina and KOH-pretreated (hydrophilic) glass before forming a continuous film. However, continuous thin films are obtained on chromic acid pretreated (hydrophobic) glass and sputtered Ag or Pt on glass after only 3-4 deposition cycles. The mean deposition rate evaluated by XPS for the first deposition cycles on Ag and Pt is 3 and 4 nm/cycle, respectively, in agreement with previous gravimetric determinations on thicker films, proving the constancy of the deposition rate. The XPS study of the very thin films obtained by a few deposition cycles shows that the first polypyrrole layers are dedoped by hydroxydic (basic) substrate surfaces.

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

Science.gov (United States)

Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

2018-06-01

In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces

International Nuclear Information System (INIS)

Bashiri, Hadi; Azim Karami, Mohammad; Mohammadnejad, Shahramm

2017-01-01

By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact (IBC) silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters (doping concentration and thickness) is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si:H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density. (paper)

Performance of a polymer electrolyte membrane fuel cell with thin film catalyst electrodes

Energy Technology Data Exchange (ETDEWEB)

Chun, Young Gab; Kim, Chang Soo; Peck, Dong Hyun; Shin, Dong Ryul [Korea Institute of Energy Research, Taejon (Korea, Republic of)

1998-03-15

In order to develop a kW-class polymer electrolyte membrane fuel cell (PEMFC), several electrodes have been fabricated by different catalyst layer preparation procedures and evaluated based on the cell performance. Conventional carbon paper and carbon cloth electrodes were fabricated using a ptfe-bonded Pt/C electrol catalyst by coating and rolling methods. Thin-film catalyst/ionomer composite layers were also formed on the membrane by direct coating and transfer printing techniques. The performance evaluation with catalyst layer preparation methods was carried out using a large or small electrode single cell. Conventional and thin film membrane and electrode assemblies (MEAs) with small electrode area showed a performance of 350 and 650 mA/cm{sup 2} at 0.6 V, respectively. The performance of direct coated thin film catalyst layer with 300 cm{sup 2} MEAs was higher than those of the conventional and transfer printing technique MEAs. The influence of some characteristic parameters of the thin film electrode on electrochemical performance was examined. Various other aspects of overall operation of PEMFC stacks were also discussed. (orig.)

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

Energy Technology Data Exchange (ETDEWEB)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Quesnel, David J. [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627 (United States)

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the

Layer-by-layer thinning of MoSe_2 by soft and reactive plasma etching

International Nuclear Information System (INIS)

Sha, Yunfei; Xiao, Shaoqing; Zhang, Xiumei; Qin, Fang; Gu, Xiaofeng

2017-01-01

Highlights: • Soft plasma etching technique using SF_6 + N_2 as precursors for layer-by-layer thinning of MoSe_2 was adopted in this work. • Optical microscopy, Raman, photoluminescence and atomic force microscopy measurements were used to confirm the thickness change. • Layer-dependent vibrational and photoluminescence spectra of the etched MoSe_2 were also demonstrated. • Equal numbers of MoSe_2 layers can be removed uniformly without affecting the underlying SiO_2 substrate and the remaining MoSe_2 layers. - Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) like molybdenum diselenide (MoSe_2) have recently gained considerable interest since their properties are complementary to those of graphene. Unlike gapless graphene, the band structure of MoSe_2 can be changed from the indirect band gap to the direct band gap when MoSe_2 changed from bulk material to monolayer. This transition from multilayer to monolayer requires atomic-layer-precision thining of thick MoSe_2 layers without damaging the remaining layers. Here, we present atomic-layer-precision thinning of MoSe_2 nanaosheets down to monolayer by using SF_6 + N_2 plasmas, which has been demonstrated to be soft, selective and high-throughput. Optical microscopy, atomic force microscopy, Raman and photoluminescence spectra suggest that equal numbers of MoSe_2 layers can be removed uniformly regardless of their initial thickness, without affecting the underlying SiO_2 substrate and the remaining MoSe_2 layers. By adjusting the etching rates we can achieve complete MoSe_2 removal and any disired number of MoSe_2 layers including monolayer. This soft plasma etching method is highly reliable and compatible with the semiconductor manufacturing processes, thereby holding great promise for various 2D materials and TMD-based devices.

Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film

Science.gov (United States)

Schmidt, Daniel J.; Pridgen, Eric M.; Hammond, Paula T.; Love, J. Christopher

2010-01-01

This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly in the context of thin films and to expose students to the concepts of functional polymeric coatings. Students dip coat…

SEM and XPS study of layer-by-layer deposited polypyrrole thin films

International Nuclear Information System (INIS)

Pigois-Landureau, E.; Nicolau, Y.F.; Delamar, M.

1996-01-01

Layer-by-layer deposition of thin films (a few nm) of polypyrrole was carried out on various substrates such as silver, platinum, electrochemically oxidized aluminum and pretreated glass. SEM micrographs showed that the deposited layers nucleate by an island-type mechanism on hydrated alumina and KOH-pretreated (hydrophilic) glass before forming a continuous film. However, continuous thin films are obtained on chromic acid pretreated (hydrophobic) glass and sputtered Ag or Pt on glass after only 3 endash 4 deposition cycles. The mean deposition rate evaluated by XPS for the first deposition cycles on Ag and Pt is 3 and 4 nm/cycle, respectively, in agreement with previous gravimetric determinations on thicker films, proving the constancy of the deposition rate. The XPS study of the very thin films obtained by a few deposition cycles shows that the first polypyrrole layers are dedoped by hydroxydic (basic) substrate surfaces. copyright 1996 American Institute of Physics

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

Science.gov (United States)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

International Nuclear Information System (INIS)

Fan, W.; Kabius, B.; Hiller, J.M.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 deg. C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlO x , while the oxide layer at the TiAl/Cu interface is an Al 2 O 3 -rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlO x interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 deg. C followed by a rapid thermal annealing at 700 deg. C. This process significantly reduced the thickness of the TiAlO x layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high

Photocatalytic performance of Sn-doped TiO2 nanostructured mono and double layer thin films for Malachite Green dye degradation under UV and vis-lights

International Nuclear Information System (INIS)

Sayilkan, F.; Asiltuerk, M.; Tatar, P.; Kiraz, N.; Arpac, E.; Sayilkan, H.

2007-01-01

Nanostructure Sn 4+ -doped TiO 2 based mono and double layer thin films, contain 50% solid ratio of TiO 2 in coating have been prepared on glass surfaces by spin-coating technique. Their photocatalytic performances were tested for degradation of Malachite Green dye in solution under UV and vis irradiation. Sn 4+ -doped nano-TiO 2 particle a doping ratio of about 5[Sn 4+ /Ti(OBu n ) 4 ; mol/mol%] has been synthesized by hydrotermal process at 225 deg. C. The structure, surface and optical properties of the thin films and/or the particles have been investigated by XRD, BET and UV/vis/NIR techniques. The results showed that the double layer coated glass surfaces have a very high photocatalytic performance than the other one under UV and vis lights. The results also proved that the hydrothermally synthesized nano-TiO 2 particles are fully anatase crystalline form and are easily dispersed in water. The results also reveal that the coated surfaces have hydrophilic property

MultiLayer solid electrolyte for lithium thin film batteries

Science.gov (United States)

Lee, Se -Hee; Tracy, C. Edwin; Pitts, John Roland; Liu, Ping

2015-07-28

A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.; Caraveo-Frescas, Jesus Alfonso; Hedhili, Mohamed N.

2014-01-01

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films

Amplitude various angles (AVA) phenomena in thin layer reservoir: Case study of various reservoirs

Energy Technology Data Exchange (ETDEWEB)

Nurhandoko, Bagus Endar B., E-mail: bagusnur@bdg.centrin.net.id, E-mail: bagusnur@rock-fluid.com [Wave Inversion and Subsurface Fluid Imaging Research Laboratory (WISFIR), Basic Science Center A 4" t" hfloor, Physics Dept., FMIPA, Institut Teknologi Bandung (Indonesia); Rock Fluid Imaging Lab., Bandung (Indonesia); Susilowati, E-mail: bagusnur@bdg.centrin.net.id, E-mail: bagusnur@rock-fluid.com [Rock Fluid Imaging Lab., Bandung (Indonesia)

2015-04-16

Amplitude various offset is widely used in petroleum exploration as well as in petroleum development field. Generally, phenomenon of amplitude in various angles assumes reservoir’s layer is quite thick. It also means that the wave is assumed as a very high frequency. But, in natural condition, the seismic wave is band limited and has quite low frequency. Therefore, topic about amplitude various angles in thin layer reservoir as well as low frequency assumption is important to be considered. Thin layer reservoir means the thickness of reservoir is about or less than quarter of wavelength. In this paper, I studied about the reflection phenomena in elastic wave which considering interference from thin layer reservoir and transmission wave. I applied Zoeppritz equation for modeling reflected wave of top reservoir, reflected wave of bottom reservoir, and also transmission elastic wave of reservoir. Results show that the phenomena of AVA in thin layer reservoir are frequency dependent. Thin layer reservoir causes interference between reflected wave of top reservoir and reflected wave of bottom reservoir. These phenomena are frequently neglected, however, in real practices. Even though, the impact of inattention in interference phenomena caused by thin layer in AVA may cause inaccurate reservoir characterization. The relation between classes of AVA reservoir and reservoir’s character are different when effect of ones in thin reservoir and ones in thick reservoir are compared. In this paper, I present some AVA phenomena including its cross plot in various thin reservoir types based on some rock physics data of Indonesia.

Amplitude various angles (AVA) phenomena in thin layer reservoir: Case study of various reservoirs

International Nuclear Information System (INIS)

thfloor, Physics Dept., FMIPA, Institut Teknologi Bandung (Indonesia); Rock Fluid Imaging Lab., Bandung (Indonesia))" data-affiliation=" (Wave Inversion and Subsurface Fluid Imaging Research Laboratory (WISFIR), Basic Science Center A 4thfloor, Physics Dept., FMIPA, Institut Teknologi Bandung (Indonesia); Rock Fluid Imaging Lab., Bandung (Indonesia))" >Nurhandoko, Bagus Endar B.; Susilowati

2015-01-01

Amplitude various offset is widely used in petroleum exploration as well as in petroleum development field. Generally, phenomenon of amplitude in various angles assumes reservoir’s layer is quite thick. It also means that the wave is assumed as a very high frequency. But, in natural condition, the seismic wave is band limited and has quite low frequency. Therefore, topic about amplitude various angles in thin layer reservoir as well as low frequency assumption is important to be considered. Thin layer reservoir means the thickness of reservoir is about or less than quarter of wavelength. In this paper, I studied about the reflection phenomena in elastic wave which considering interference from thin layer reservoir and transmission wave. I applied Zoeppritz equation for modeling reflected wave of top reservoir, reflected wave of bottom reservoir, and also transmission elastic wave of reservoir. Results show that the phenomena of AVA in thin layer reservoir are frequency dependent. Thin layer reservoir causes interference between reflected wave of top reservoir and reflected wave of bottom reservoir. These phenomena are frequently neglected, however, in real practices. Even though, the impact of inattention in interference phenomena caused by thin layer in AVA may cause inaccurate reservoir characterization. The relation between classes of AVA reservoir and reservoir’s character are different when effect of ones in thin reservoir and ones in thick reservoir are compared. In this paper, I present some AVA phenomena including its cross plot in various thin reservoir types based on some rock physics data of Indonesia

Therapeutic drug monitoring of nevirapine in saliva in Uganda using high performance liquid chromatography and a low cost thin-layer chromatography technique

NARCIS (Netherlands)

Lamorde, M.; Fillekes, Q.; Sigaloff, K.; Kityo, C.; Buzibye, A.; Kayiwa, J.; Merry, C.; Nakatudde-Katumba, L.; Burger, D.M.; Wit, T.F. de

2014-01-01

BACKGROUND: In resource limited settings access to laboratory monitoring of HIV treatment is limited and therapeutic drug monitoring is generally unavailable. This study aimed to evaluate nevirapine concentrations in saliva using low-cost thin-layer chromatography (TLC) and nevirapine concentrations

Therapeutic drug monitoring of nevirapine in saliva in Uganda using high performance liquid chromatography and a low cost thin-layer chromatography technique

NARCIS (Netherlands)

Lamorde, Mohammed; Fillekes, Quirine; Sigaloff, Kim; Kityo, Cissy; Buzibye, Allan; Kayiwa, Joshua; Merry, Concepta; Nakatudde-Katumba, Lillian; Burger, David; Rinke de Wit, Tobias F.

2014-01-01

In resource limited settings access to laboratory monitoring of HIV treatment is limited and therapeutic drug monitoring is generally unavailable. This study aimed to evaluate nevirapine concentrations in saliva using low-cost thin-layer chromatography (TLC) and nevirapine concentrations in plasma

High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics.

Science.gov (United States)

Chang, Ren-Jie; Tan, Haijie; Wang, Xiaochen; Porter, Benjamin; Chen, Tongxin; Sheng, Yuewen; Zhou, Yingqiu; Huang, Hefu; Bhaskaran, Harish; Warner, Jamie H

2018-04-18

Tin disulfide crystals with layered two-dimensional (2D) sheets are grown by chemical vapor deposition using a novel precursor approach and integrated into all 2D transistors with graphene (Gr) electrodes. The Gr:SnS 2 :Gr transistors exhibit excellent photodetector response with high detectivity and photoresponsivity. We show that the response of the all 2D photodetectors depends upon charge trapping at the interface and the Schottky barrier modulation. The thickness-dependent SnS 2 measurements in devices reveal a transition from the interface-dominated response for thin crystals to bulklike response for the thicker SnS 2 crystals, showing the sensitivity of devices fabricated using layered materials on the number of layers. These results show that SnS 2 has photosensing performance when combined with Gr electrodes that is comparable to other 2D transition metal dichalcogenides of MoS 2 and WS 2 .

High-performance Thin-layer Chromatographic-densitometric Quantification and Recovery of Bioactive Compounds for Identification of Elite Chemotypes of Gloriosa superba L. Collected from Sikkim Himalayas (India).

Science.gov (United States)

Misra, Ankita; Shukla, Pushpendra Kumar; Kumar, Bhanu; Chand, Jai; Kushwaha, Poonam; Khalid, Md; Singh Rawat, Ajay Kumar; Srivastava, Sharad

2017-10-01

Gloriosa superba L. (Colchicaceae) is used as adjuvant therapy in gout for its potential antimitotic activity due to high colchicine(s) alkaloids. This study aimed to develop an easy, cheap, precise, and accurate high-performance thin-layer chromatographic (HPTLC) validated method for simultaneous quantification of bioactive alkaloids (colchicine and gloriosine) in G. superba L. and to identify its elite chemotype(s) from Sikkim Himalayas (India). The HPTLC chromatographic method was developed using mobile phase of chloroform: acetone: diethyl amine (5:4:1) at λ max of 350 nm. Five germplasms were collected from targeted region, and on morpho-anatomical inspection, no significant variation was observed among them. Quantification data reveal that content of colchicine ( R f : 0.72) and gloriosine ( R f : 0.61) varies from 0.035%-0.150% to 0.006%-0.032% (dry wt. basis). Linearity of method was obtained in the concentration range of 100-400 ng/spot of marker(s), exhibiting regression coefficient of 0.9987 (colchicine) and 0.9983 (gloriosine) with optimum recovery of 97.79 ± 3.86 and 100.023% ± 0.01%, respectively. Limit of detection and limit of quantification were analyzed, respectively, as 6.245, 18.926 and 8.024, 24.316 (ng). Two germplasms, namely NBG-27 and NBG-26, were found to be elite chemotype of both the markers. The developed method is validated in terms of accuracy, recovery, and precision studies as per the ICH guidelines (2005) and can be adopted for the simultaneous quantification of colchicine and gloriosine in phytopharmaceuticals. In addition, this study is relevant to explore the chemotypic variability in metabolite content for commercial and medicinal purposes. An easy, cheap, precise, and accurate high performance thin layer chromatographic (HPTLC) validated method for simultaneous quantification of bioactive alkaloids (colchicine and gloriosine) in G. superba L.Five germplasms were collected from targeted region, and on morpho anatomical

Copper diffusion in TaN-based thin layers

Energy Technology Data Exchange (ETDEWEB)

Nazon, J. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Fraisse, B. [Laboratoire Structure, Proprietes et Modelisation des Solides (UMR 8580), Ecole Centrale de Paris, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex (France); Sarradin, J. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Fries, S.G. [SGF Scientific Consultancy, Arndt str.9, D-52064 Aachen (Germany); Tedenac, J.C. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France); Frety, N. [Universite Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5 (France)], E-mail: Nicole.Frety@univ-montp2.fr

2008-07-15

The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773-973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer.

Perpendicular magnetic tunnel junction with thin CoFeB/Ta/Co/Pd/Co reference layer

Energy Technology Data Exchange (ETDEWEB)

Gan, Huadong, E-mail: huadong@avalanche-technology.com; Malmhall, Roger; Wang, Zihui; Yen, Bing K; Zhang, Jing; Wang, Xiaobin; Zhou, Yuchen; Hao, Xiaojie; Jung, Dongha; Satoh, Kimihiro; Huai, Yiming [Avalanche Technology, 46600 Landing Parkway, Fremont, California 94538 (United States)

2014-11-10

Integration of high density spin transfer torque magnetoresistance random access memory requires a thin stack (less than 15 nm) of perpendicular magnetic tunnel junction (p-MTJ). We propose an innovative approach to solve this challenging problem by reducing the thickness and/or moment of the reference layer. A thin reference layer structure of CoFeB/Ta/Co/Pd/Co has 60% magnetic moment of the conventional thick structure including [Co/Pd] multilayers. We demonstrate that the perpendicular magnetization of the CoFeB/Ta/Co/Pd/Co structure can be realized by anti-ferromagnetically coupling to a pinned layer with strong perpendicular anisotropy via Ruderman-Kittel-Kasuya-Yosida exchange interaction. The pMTJ with thin CoFeB/Ta/Co/Pd/Co reference layer has a comparable TMR ratio (near 80%) as that with thick reference layer after annealing at 280 °C. The pMTJ with thin reference layer has a total thickness less than 15 nm, thereby significantly increasing the etching margin required for integration of high density pMTJ array on wafers with form factor of 300 mm and beyond.

High-performance thin-layer chromatographic fingerprints of isoflavonoids for distinguishing between Radix Puerariae Lobate and Radix Puerariae Thomsonii.

Science.gov (United States)

Chen, Si-Bao; Liu, He-Ping; Tian, Run-Tao; Yang, Da-Jian; Chen, Shi-Lin; Xu, Hong-Xi; Chan, Albert S C; Xie, Pei-Shan

2006-07-14

The roots of Pueraria lobata (Wild.) Ohwi and Pueraria thomsonii Benth have been officially recorded in all editions of Chinese Pharmacopoeia under the same monograph 'Gegen' (Radix Puerariae, RP). However, in its 2005 edition, the two species were separated into both individual monographs, namely 'Gegen' (Radix Puerariae Lobatae, RPL) and 'Fenge' (Radix Puerariae Thomsonii, RPT), respectively, due to their obvious content discrepancy of puerarin, the major active constituent. In present paper, the fingerprint of high-performance thin-layer chromatography (HPTLC) combining digital scanning profiling was developed to identify and distinguish the both species in detail. The unique properties of the HPTLC fingerprints were validated by analyzing ten batches of Pueraria lobata and P. thomsonii samples, respectively. The common pattern of the HPTLC images of the roots of Pueraria spp. and the respective different ratios of the chemical distribution can directly discern the two species. The corresponding digital scanning profiles provided an easy way for quantifiable comparison among the samples. Obvious difference in ingredient content and HPTLC patterns of the two species questioned their bio-equivalence and explained that recording both species separately in the current edition of Chinese Pharmacopoeia (2005 edition) is reasonable due to not only the content of major constituent, puerarin, but also the peak-to-peak distribution in the fingerprint and integration value of the total components. Furthermore, the HPTLC fingerprint is also suitable for rapid and simple authentication and comparison of the subtle difference among samples with identical plant resource but different geographic locations.

Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

International Nuclear Information System (INIS)

Yang Yu; Wang Lian; Yan He; Jin Shu; Marks, Tobin J.; Li Shuyou

2006-01-01

Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2 O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/□, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10 /R sheet ) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

International Nuclear Information System (INIS)

Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

2008-01-01

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

2008-06-21

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

Pre-staining thin layer chromatography method for amino acid ...

African Journals Online (AJOL)

Jane

2010-12-13

Dec 13, 2010 ... inexpensive and the results obtained were clean and reproducible. However, it is suitable for the high throughput screening of amino acid-producing strains. Key words: Thin layer chromatography, pre-staining, amino acid detection. INTRODUCTION. Several analytical techniques have been often used for.

Effects of Different Levels of Echinostoma caproni Miracidial Dose on Glucose and Maltose Composition of Biomphalaria glabrata Snails as Determined by High Performance Thin-Layer Chromatography-Densitometry

Directory of Open Access Journals (Sweden)

Dolcie DeGrandchamp

2015-04-01

Full Text Available The effects of 5, 25, and 40 Echinostoma caproni miracidia on the sugar content of young adult and mature adult Biomphalaria glabrata were studied using high performance thin layer chromatography (HPTLC-densitometry. Analysis was done on the snail’s digestive gland gonad complex (DGG at two and four weeks postmiracidial exposure. The sugars were extracted from the DGG using 70% ethanol and analyzed on silica gel HPTLC plates with a preadsorbent zone using 1-butanol-glacial acetic acid-diethyl ether-deionized water (27:18:5:3 mobile phase. The separated bands were then detected using alpha-naphthol-sulfuric reagent and quantified by densitometry at 515 nm. Significant differences were found in the maltose content between two and four weeks post exposure for both age groups. Additionally, significantly lower maltose and glucose levels were observed in the high exposure groups of both ages.

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

Science.gov (United States)

Rajanikant, Ray Jayminkumar

pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further

Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

Science.gov (United States)

Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

2017-05-01

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

International Nuclear Information System (INIS)

Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

2014-01-01

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

A High-Performance Thin Layer Chromatography (HPTLC) Method for Simultaneous Determination of Diphenhydramine Hydrochloride and Naproxen Sodium in Tablets.

Science.gov (United States)

Bhole, R P; Shinde, S S; Chitlange, S S; Wankhede, S B

2015-01-01

A rapid and simple high-performance thin layer chromatography (HPTLC) method with densitometry at 230 nm was developed and validated for simultaneous determination of diphenhydramine hydrochloride (DPH) and naproxen sodium (NPS) from pharmaceutical preparation. The separation was carried out on aluminum plates precoated with silica gel 60 F254 using mobile phase toluene:methanol:glacial acetic acid (7.5:1:0.2, v/v/v). The linearity range lies between 200 and 1200 ng/band for DPH and 1760 and 10,560 ng/band for NPS with correlation coefficients of 0.994 and 0.995, respectively. The R f value for DPH is 0.20 ± 0.05 and for NPS is 0.61 ± 0.06. % Recoveries of DPH and NPS was in the range of 99.70%-99.95% and 99.63%-99.95%, respectively. Limit of detection value for DPH was 13.21 ng/band and for NPS was 8.03 ng/band. Limit of quantitation value for DPH was 40.06 ng/band and for NPS was 24.34 ng/band. The developed method was validated as per ICH guidelines. In stability testing, DPH was found unstable to acid and alkaline hydrolysis, and DPH and NPS were found unstable to oxidation, whereas both the drugs were stable to neutral and photodegradation. The proposed method was successfully applied for the routine quantitative analysis of dosage form containing DPH and NPS.

Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp

KAUST Repository

Tetzner, Kornelius

2017-11-01

We report the fabrication of solution-processed In2O3 and In2O3/ZnO heterojunction thin-film transistors (TFTs) where the precursor materials were converted to their semiconducting state using high power light pulses generated by a xenon flash lamp. In2O3 TFTs prepared on glass substrates exhibited low-voltage operation (≤2 V) and a high electron mobility of ∼6 cm2 V−1 s−1. By replacing the In2O3 layer with a photonically processed In2O3/ZnO heterojunction, we were able to increase the electron mobility to 36 cm2 V−1 s−1, while maintaining the low-voltage operation. Although the level of performance achieved in these devices is comparable to control TFTs fabricated via thermal annealing at 250 °C for 1 h, the photonic treatment approach adopted here is extremely rapid with a processing time of less than 18 s per layer. With the aid of a numerical model we were able to analyse the temperature profile within the metal oxide layer(s) upon flashing revealing a remarkable increase of the layer\\'s surface temperature to ∼1000 °C within ∼1 ms. Despite this, the backside of the glass substrate remains unchanged and close to room temperature. Our results highlight the applicability of the method for the facile manufacturing of high performance metal oxide transistors on inexpensive large-area substrates.

Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.

Science.gov (United States)

Li, H K; Chen, T P; Hu, S G; Li, X D; Liu, Y; Lee, P S; Wang, X P; Li, H Y; Lo, G Q

2015-10-19

Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.

Methods for producing thin film charge selective transport layers

Science.gov (United States)

Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

2018-01-02

Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

Thin hybrid pixel assembly fabrication development with backside compensation layer

Energy Technology Data Exchange (ETDEWEB)

Bates, R., E-mail: richard.bates@glasgow.ac.uk [Experimental Particle Physics Group, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ (United Kingdom); Buttar, C.; McMullen, T.; Cunningham, L.; Ashby, J.; Doherty, F. [Experimental Particle Physics Group, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ (United Kingdom); Pares, G.; Vignoud, L.; Kholti, B. [CEA Leti, MINATEC, 17 rue des Martyrs, F38054, Grenoble (France); Vahanen, S. [Advacam Oy, Tietotie 3, 02150 Espoo (Finland)

2017-02-11

The ATLAS and CMS experiments will both replace their entire tracking systems for operation at the HL-LHC in 2026. This will include a significantly larger pixel systems, for example, for ATLAS approximately 15 m{sup 2}. To keep the tracker material budget low it is crucial to minimize the mass of the pixel modules via thinning both the sensor and readout chip to about 150 μm each. The bump yield of thin module assemblies using solder based bump bonding can be problematic due to wafer bowing during solder reflow at high temperature. A new bump-bonding process using backside compensation on the readout chip to address the issue of low yield will be presented. The objective is to compensate dynamically the stress of the front side stack by adding a compensating layer to the backside of the wafer. A SiN and Al:Si stack has been chosen for the backside layer. The bow reducing effect of applying a backside compensation layer will be demonstrated using the FE-I4 wafer. The world's first results from assemblies produced from readout wafers thinned to 100 μm with a stress compensation layer are presented with bond yields close to 100% measured using the FE-I4 readout chip.

Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors

Science.gov (United States)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Yamazaki, Haruka; Nonaka, Toshiaki; Fujii, Mami N.; Uraoka, Yukiharu

2015-07-01

We report the fabrication of a photosensitive hybrid passivation material on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) that greatly enhance its stability and improve its electrical characteristics. The hybrid passivation based on polysilsesquioxane is transparent and fabricated using a simple solution process. Because the passivation is photosensitive, dry etching was never performed during TFT fabrication. TFTs passivated with this material had a small threshold voltage shift of 0.5 V during positive bias stress, 0.5 V during negative bias stress, and -2.5 V during negative bias illumination stress. Furthermore, TFTs passivated by this layer were stable after being subjected to high relative humidity stress — confirming the superb barrier ability of the passivation. Analysis of secondary ion mass spectrometry showed that a large amount of hydrogen, carbon, and fluorine can be found in the channel region. We show that both hydrogen and fluorine reduced oxygen vacancies and that fluorine stabilized weak oxygen and hydroxide bonds. These results demonstrate the large potential of photosensitive hybrid passivation layers as effective passivation materials.

Characterization and obtainment of thin films based on N,N,N-trimethyl chitosan and heparin through the technical layer-by-layer; Caracterizacao e obtencao de filmes finos de N,N,N-trimetil quitosana e heparina atraves da tecnica layer-by-layer

Energy Technology Data Exchange (ETDEWEB)

NONE

2011-07-01

Thin films of Heparin (HP) and N,N,N-trimethyl chitosan (TMC) with a high degree of quaternization (DQ) were obtained at pH 7.4 through the layer-by-layer (LbL) technique. Polystyrene (PS) was oxidized with aqueous solution of sodium persulfate and subsequently employed as substrate. The characterization of TMC and the respective determination of DQ were performed through {sup 1}H NMR spectroscopy. The thin films de TMC/HP were characterized by FTIR-ATR and AFM. Both techniques confirmed the adsorption of TMC and HP in surface of the PS. The increasing of the bilayers provides a decrease of the projections and/or roughness, further of minimizing the depressions at the surface of the films. Studies of thin films the base of TMC/HP prepared from the LbL technique has not been reported in the literature. It is expected that the thin films of TMC/HP present anti-adhesive and antimicrobial properties. (author)

Thin film photovoltaic devices with a minimally conductive buffer layer

Science.gov (United States)

Barnes, Teresa M.; Burst, James

2016-11-15

A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Thin layer activation: measuring wear and corrosion

International Nuclear Information System (INIS)

Delvigne, T.; Leyman, D.; Oxorn, K.

1995-01-01

The technique known as thin layer activation (TLA) is explained and assessed in this article. Widely used, in for example the automotive industry, TLA allows on-line monitoring of the loss of matter from a critical surface, by wear erosion and corrosion. The technique offers extremely high sensitivity thus leading to reduced test times. On-line wear phenomena can be assessed during operation of a mechanical process, even through thick engine walls. (UK)

Thin-layer and paper chromatography

International Nuclear Information System (INIS)

Sherma, J.

1986-01-01

This selective review covers the literature of thin-layer chromatography (TLC) and paper chromatography (PC) cited in Chemical Abstracts from December 5, 1983, through November 25, 1985, and Analytical Abstracts from November 1983 to November 1985. Also researched directly were the following important journals publishing papers on TLC and PC: the Journal of Chromatography (including its bibliography issues), Journal of High Resolution Chromatography and Chromatography Communications, Journal of Chromatographic Science, Chromatographia, Analytical Chemistry, JAOAC, and the special TLC issues of the Journal of Liquid Chromatography. Many of the inherent advantages of TLC that are obvious to workers familiar with high performance, quantitative theory and practice still are not appreciated adequately by the majority of people using chromatography. These include unrestricted access to the separation process; introducing magnetic, thermal, electrical, and other physical forces to improve resolution; high sample throughput; truly multidimensional separations; and the use of controlled multiple gradients. Many advantages of TLC relative to column chromatography were discussed in the Introductions to our 1982 and 1984 reviews of TLC in this Journal. No complete commercial robotics system specifically for TLC has been developed, but all necessary modules are available for such a system. The combination of robotics, with the continued development of theory, practice, and instrumentation will lead eventually to TLC systems that are unrivaled for speed, versatility, accuracy, precision, and sensitivity. 573 references

Designing high-Performance layered thermoelectric materials through orbital engineering

DEFF Research Database (Denmark)

Zhang, Jiawei; Song, Lirong; Madsen, Georg K. H.

2016-01-01

Thermoelectric technology, which possesses potential application in recycling industrial waste heat as energy, calls for novel high-performance materials. The systematic exploration of novel thermoelectric materials with excellent electronic transport properties is severely hindered by limited...... insight into the underlying bonding orbitals of atomic structures. Here we propose a simple yet successful strategy to discover and design high-performance layered thermoelectric materials through minimizing the crystal field splitting energy of orbitals to realize high orbital degeneracy. The approach...... naturally leads to design maps for optimizing the thermoelectric power factor through forming solid solutions and biaxial strain. Using this approach, we predict a series of potential thermoelectric candidates from layered CaAl2Si2-type Zintl compounds. Several of them contain nontoxic, low-cost and earth...

Application of thin-layer Navier-Stokes equations near maximum lift

Science.gov (United States)

Anderson, W. K.; Thomas, J. L.; Rumsey, C. L.

1984-01-01

The flowfield about a NACA 0012 airfoil at a Mach number of 0.3 and Reynolds number of 1 million is computed through an angle of attack range, up to 18 deg, corresponding to conditions up to and beyond the maximum lift coefficient. Results obtained using the compressible thin-layer Navier-Stokes equations are presented as well as results from the compressible Euler equations with and without a viscous coupling procedure. The applicability of each code is assessed and many thin-layer Navier-Stokes benchmark solutions are obtained which can be used for comparison with other codes intended for use at high angles of attack. Reasonable agreement of the Navier-Stokes code with experiment and the viscous-inviscid interaction code is obtained at moderate angles of attack. An unsteady solution is obtained with the thin-layer Navier-Stokes code at the highest angle of attack considered. The maximum lift coefficient is overpredicted, however, in comparison to experimental data, which is attributed to the presence of a laminar separation bubble near the leading edge not modeled in the computations. Two comparisons with experimental data are also presented at a higher Mach number.

High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Oberbeck, L.; Schmidt, J.; Wagner, T.A.; Bergmann, R.B. [Stuttgart Univ. (Germany). Inst. of Physical Electronics

2001-07-01

Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 {mu}m, obtained at a record deposition rate of 0.8 {mu}m/min and a deposition temperature of 650{sup o}C with a prebake at 810{sup o}C. A thin-film Si solar cell with a 20-{mu}m-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps. (author)

High-performance polymer/layered silicate nanocomposites

Science.gov (United States)

Heidecker, Matthew J.

High-performance layered-silicate nanocomposites of Polycarbonate (PC), poly(ethylene terephthalate) (PET), and their blends were produced via conventional melt-blending techniques. The focus of this thesis was on the fundamentals of dispersion, control of thermal stability, maintenance of melt-blending processing conditions, and on optimization of the composites' mechanical properties via the design of controlled and thermodynamically favorable nano-filler dispersions within the polymer matrices. PET and PC require high temperatures for melt-processing, rendering impractical the use of conventional/commercial organically-modified layered-silicates, since the thermal degradation temperatures of their ammonium surfactants lies below the typical processing temperatures. Thus, different surfactant chemistries must be employed in order to develop melt-processable nanocomposites, also accounting for polymer matrix degradation due to water (PET) or amine compounds (PC). Novel high thermal-stability surfactants were developed and employed in montmorillonite nanocomposites of PET, PC, and PC/PET blends, and were compared to the respective nanocomposites based on conventional quaternary-ammonium modified montmorillonites. Favorable dispersion was achieved in all cases, however, the overall material behavior -- i.e., the combination of crystallization, mechanical properties, and thermal degradation -- was better for the nanocomposites based on the thermally-stable surfactant fillers. Studies were also done to trace, and ultimately limit, the matrix degradation of Polycarbonate/montmorillonite nanocomposites, through varying the montmorillonite surfactant chemistry, processing conditions, and processing additives. Molecular weight degradation was, maybe surprisingly, better controlled in the conventional quaternary ammonium based nanocomposites -- even though the thermal stability of the organically modified montmorillonites was in most cases the lowest. Dependence of the

Transparent conducting oxide layers for thin film silicon solar cells

NARCIS (Netherlands)

Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

2009-01-01

Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

Energy Technology Data Exchange (ETDEWEB)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe; Andrä, Gudrun [Leibniz-Institut für Photonische Technologien, PF 100239, 07702 Jena (Germany); Himmerlich, Marcel; Krischok, Stefan [Institut für Mikro-und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau (Germany)

2016-01-28

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

Transparent high-performance CDSE thin-film solar cells

International Nuclear Information System (INIS)

Mahawela, P.; Jeedigunta, S.; Vakkalanka, S.; Ferekides, C.S.; Morel, D.L.

2005-01-01

Simulations indicate that 25-30% efficiency can be achieved with a four-terminal thin-film tandem structure. The bottom low band gap cell can be CuIn 1-x Ga x Se 2 , and CdSe is proposed as the top cell, as it has an ideal band gap of 1.7 eV. In addition to the efficiency requirements, the top cell must also be transparent to effectively transmit sub band gap light to the bottom cell. We have developed CdSe devices that meet many of the requirements of this tandem structure. High electronic quality CdSe has been deposited on SnO 2 and ZnO, which serve as the transparent n-type contact. The p-type transparent contact is ZnSe/Cu. Voc's of 475 mV have been achieved and can be further improved with better contacts. However, record Jsc's in excess of 17 mA/cm 2 have been achieved. This is close to the target 18 mA/cm 2 to meet the efficiency objectives. Transmission of 80% of the sub band gap radiation has been demonstrated for 2-no. muno. m-thick absorber layers. This is also close to the 85% target to achieve the overall tandem efficiency objectives. Improvement of the contact layers to achieve the Voc target is the final challenge

Layer-by-layer thinning of MoSe{sub 2} by soft and reactive plasma etching

Energy Technology Data Exchange (ETDEWEB)

Sha, Yunfei [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Xiao, Shaoqing, E-mail: larring0078@hotmail.com [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Zhang, Xiumei [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China); Qin, Fang [Analysis & Testing Center, Jiangnan University, Wuxi 214122 (China); Gu, Xiaofeng, E-mail: xfgu@jiangnan.edu.cn [Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China)

2017-07-31

Highlights: • Soft plasma etching technique using SF{sub 6} + N{sub 2} as precursors for layer-by-layer thinning of MoSe{sub 2} was adopted in this work. • Optical microscopy, Raman, photoluminescence and atomic force microscopy measurements were used to confirm the thickness change. • Layer-dependent vibrational and photoluminescence spectra of the etched MoSe{sub 2} were also demonstrated. • Equal numbers of MoSe{sub 2} layers can be removed uniformly without affecting the underlying SiO{sub 2} substrate and the remaining MoSe{sub 2} layers. - Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) like molybdenum diselenide (MoSe{sub 2}) have recently gained considerable interest since their properties are complementary to those of graphene. Unlike gapless graphene, the band structure of MoSe{sub 2} can be changed from the indirect band gap to the direct band gap when MoSe{sub 2} changed from bulk material to monolayer. This transition from multilayer to monolayer requires atomic-layer-precision thining of thick MoSe{sub 2} layers without damaging the remaining layers. Here, we present atomic-layer-precision thinning of MoSe{sub 2} nanaosheets down to monolayer by using SF{sub 6} + N{sub 2} plasmas, which has been demonstrated to be soft, selective and high-throughput. Optical microscopy, atomic force microscopy, Raman and photoluminescence spectra suggest that equal numbers of MoSe{sub 2} layers can be removed uniformly regardless of their initial thickness, without affecting the underlying SiO{sub 2} substrate and the remaining MoSe{sub 2} layers. By adjusting the etching rates we can achieve complete MoSe{sub 2} removal and any disired number of MoSe{sub 2} layers including monolayer. This soft plasma etching method is highly reliable and compatible with the semiconductor manufacturing processes, thereby holding great promise for various 2D materials and TMD-based devices.

Improvement of transistor characteristics and stability for solution-processed ultra-thin high-valence niobium doped zinc-tin oxide thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Jeng, Jiann-Shing, E-mail: jsjeng@mail.nutn.edu.tw

2016-08-15

Nb-doped Zinc tin oxide (NZTO) channel materials have been prepared by solution process in combination with the spin-coating method. All NZTO thin film transistors (TFTs) are n-type enhancement-mode devices, either without or with Nb additives. High-valence niobium ion (ionic charge = +5) has a larger ionic potential and similar ionic radius to Zn{sup 2+} and Sn{sup 4+} ions. As compared with the pure ZTO device, introducing Nb{sup 5+} ions into the ZTO channel layers can improve the electrical properties and bias stability of TFTs because of the reduction of the oxygen vacancies. This study discusses the connection among the material properties of the NZTO films and the electrical performance and bias stability of NZTO TFTs and how they are influenced by the Nb/(Nb + Sn) molar ratios of NZTO films. - Highlights: • Ultra-thin high-valence niobium doped zinc-tin oxide (NZTO) thin films are prepared using a solution process. • Nb dopants in ZTO films reduce the oxygen vacancy and subgap adsorption of the ZTO films. • The Nb-doping concentration of the NZTO channel layer has a strong influence on the TFT performance.

Development and Validation of High Performance Thin-Layer Chromatographic Method for Determination of α-Mangostin in Fruit Pericarp of Mangosteen Plant (Garcinia mangostana L. using Ultraviolet – Visible Detection

Directory of Open Access Journals (Sweden)

Himanshu Misra

2009-10-01

Full Text Available A simple, fast and precise quantitative high performance thin-layer chromatographic method has been developed for quantitative estimation of α-mangostin in fruit pericarp of Garcinia mangostana L. (Hypericaceae. Best solvent for extraction of a-mangostin optimized after screening with five solvents under same conditions using hot solid-liquid extraction through soxhlet apparatus. Methanol and chloroform gave highest and second highest recovery of a-mangostin, respectively. Plates were developed in chloroform-methanol in the ratio of 27-3 (v/v. Post-chromatographic derivatization performed using anisaldehyde-sulphuric acid reagent and scanned at 382 nm in ultraviolet-visible mode. The developed method was found to be linear in the range 1.0 to 5.0 mg spot-1, limits of detection and quantitation were 150 and 450 ng spot-1. The developed method was validated in terms of system suitability, specificity and robustness.

Thin layer model for nonlinear evolution of the Rayleigh-Taylor instability

Science.gov (United States)

Zhao, K. G.; Wang, L. F.; Xue, C.; Ye, W. H.; Wu, J. F.; Ding, Y. K.; Zhang, W. Y.

2018-03-01

On the basis of the thin layer approximation [Ott, Phys. Rev. Lett. 29, 1429 (1972)], a revised thin layer model for incompressible Rayleigh-Taylor instability has been developed to describe the deformation and nonlinear evolution of the perturbed interface. The differential equations for motion are obtained by analyzing the forces (the gravity and pressure difference) of fluid elements (i.e., Newton's second law). The positions of the perturbed interface are obtained from the numerical solution of the motion equations. For the case of vacuum on both sides of the layer, the positions of the upper and lower interfaces obtained from the revised thin layer approximation agree with that from the weakly nonlinear (WN) model of a finite-thickness fluid layer [Wang et al., Phys. Plasmas 21, 122710 (2014)]. For the case considering the fluids on both sides of the layer, the bubble-spike amplitude from the revised thin layer model agrees with that from the WN model [Wang et al., Phys. Plasmas 17, 052305 (2010)] and the expanded Layzer's theory [Goncharov, Phys. Rev. Lett. 88, 134502 (2002)] in the early nonlinear growth regime. Note that the revised thin layer model can be applied to investigate the perturbation growth at arbitrary Atwood numbers. In addition, the large deformation (the large perturbed amplitude and the arbitrary perturbed distributions) in the initial stage can also be described by the present model.

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Energy Technology Data Exchange (ETDEWEB)

Hoye, Robert L. Z., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Muñoz-Rojas, David [LMGP, University Grenoble-Alpes, CNRS, F-3800 Grenoble (France); Nelson, Shelby F. [Kodak Research Laboratories, Eastman Kodak Company, Rochester, New York 14650 (United States); Illiberi, Andrea; Poodt, Paul [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Roozeboom, Fred [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB (Netherlands)

2015-04-01

Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

High performance direct methanol fuel cell with thin electrolyte membrane

Science.gov (United States)

Wan, Nianfang

2017-06-01

A high performance direct methanol fuel cell is achieved with thin electrolyte membrane. 320 mW cm-2 of peak power density and over 260 mW cm-2 at 0.4 V are obtained when working at 90 °C with normal pressure air supply. It is revealed that the increased anode half-cell performance with temperature contributes primarily to the enhanced performance at elevated temperature. From the comparison of iR-compensated cathode potential of methanol/air with that of H2/air fuel cell, the impact of methanol crossover on cathode performance decreases with current density and becomes negligible at high current density. Current density is found to influence fuel efficiency and methanol crossover significantly from the measurement of fuel efficiency at different current density. At high current density, high fuel efficiency can be achieved even at high temperature, indicating decreased methanol crossover.

Novel cellulose ester substrates for high performance flat-sheet thin-film composite (TFC) forward osmosis (FO) membranes

KAUST Repository

Ong, Rui Chin

2015-01-01

A novel hydrophilic cellulose ester with a high intrinsic water permeability and a water partition coefficient was discovered to construct membrane supports for flat-sheet thin film composite (TFC) forward osmosis (FO) membranes for water reuse and seawater desalination with high performance. The performance of TFC-FO membranes prepared from the hydrophilic cellulose ester containing a high degree of OH and a moderate degree of Pr substitutions clearly surpasses those prepared from cellulose esters and other polymers with moderate hydrophilicity. Post-treatments of TFC-FO membranes using sodium dodecyl sulfate (SDS) and glycerol followed by heat treatment further enhance the water flux without compromising the selectivity. Positron annihilation lifetime analyses have confirmed that the SDS/glycerol post-treatment increases the free volume size and fractional free volume of the polyamide selective layer. The newly developed post-treated TFC-FO membranes exhibit a remarkably high water flux up to 90 LMH when the selective layer is oriented towards the draw solution (i.e., PRO mode) using 1. M NaCl as the draw solution and DI water as the feed. For seawater desalination, the membranes display a high water flux up to 35 LMH using a 2. M NaCl draw solution. These water fluxes exceeded the water fluxes achieved by other types of FO membranes reported in literatures. © 2014 Elsevier B.V.

Cross-Field Current Instabilities in Thin Ionization Layers and the Enhanced Aurora

International Nuclear Information System (INIS)

Johnson, Jay R.; Okuda, Hideo

2008-01-01

Nearly half of the time, auroral displays exhibit thin, bright layers known as 'enhanced aurora'. There is a substantial body of evidence that connects these displays with thin, dense, heavy ion layers in the E-region. Based on the spectral characteristics of the enhanced layers, it is believed that they result when wave-particle interaction heats ambient electrons to energies at or just above the 17 eV ionization energy of N2. While there are several possible instabilities that could produce suprathermal electrons in thin layers, there has been no clear theoretical investigation which examines in detail how wave instabilities in the thin ionization layers could develop and produce the suprathermal electrons. We examine instabilities which would occur in thin, dense, heavy ion layers using extensive analytical analysis combined with particle simulations. We analyze a cross field current instability that is found to be strongly unstable in the heavy ion layers. Electrostatic simulations show that substantial heating of the ambient electrons occurs with energization at or above the N2 ionization energy.

Algerian mint species：high performance thin layer chromatography quantitative determination of rosmarinic acid and in vitro inhibitory effects on linoleic acid peroxidation

Institute of Scientific and Technical Information of China (English)

Brahmi Fatiha; Madani Khodir; Stvigny Caroline; Chibane Mohamed; Duez Pierre

2014-01-01

Objective: To determine the quantitative paremeters of rosmarinic acid in Algerian mints,Mentha spicata L. (M. spicata), Mentha pulegium L. and Mentha rotundifolia (L.) Huds by high performance thin layer chromatography (HPTLC)-densitometric method and screen the effects of these plant extracts on linoleic acid peroxidation.Methods:The analyses were performed on HPTLC silica gel 60 F254 plates with chloroform:acetone: formic acid (75:16.5:8.5, v/v) as the mobile phase. Rosmarinic acid was determined in UV at 365 nm and fluorescence at λexc 325 nm with a 550 nm filter, respectively. The effects of plants extracts on linoleic acid peroxidation were measured by an indirect in vitro colorimetric method.Results:Chromatographic resolution permitted reliable quantification in both measurement modes and calibration curves were linear in a range of 150-1000 ng/spot. M. spicata was found to contain significantly higher concentrations of rosmarinic acid. The densitometric quantification allowed the analysis of many samples in a short time with reasonable precision (total precision for Mentha spp extracts, 5.1% and 5.8% for UV and fluorescence detection, respectively). The HPTLC data, allied to assays of linoleic acid peroxidation prevention, suggested the potential of M. spicata (52% Trolox®equivalents) as a natural source for inhibitors of lipid peroxidation.Conclusions:Densitometry can be used for routine determination and quality control of rosmarinic acid in herbal and formulations containing Mentha species.

Algerian mint species: high performance thin layer chromatography quantitative determination of rosmarinic acid and in vitro inhibitory effects on linoleic acid peroxidation

Directory of Open Access Journals (Sweden)

Brahmi Fatiha

2014-12-01

Full Text Available Objective: To determine the quantitative paremeters of rosmarinic acid in Algerian mints, Mentha spicata L. (M. spicata, Mentha pulegium L. and Mentha rotundifolia (L. Huds by high performance thin layer chromatography (HPTLC-densitometric method and screen the effects of these plant extracts on linoleic acid peroxidation. Methods: The analyses were performed on HPTLC silica gel 60 F254 plates with chloroform: acetone: formic acid (75:16.5:8.5, v/v as the mobile phase. Rosmarinic acid was determined in UV at 365 nm and fluorescence at λexc 325 nm with a 550 nm filter, respectively. The effects of plants extracts on linoleic acid peroxidation were measured by an indirect in vitro colorimetric method. Results: Chromatographic resolution permitted reliable quantification in both measurement modes and calibration curves were linear in a range of 150-1 000 ng/spot. M. spicata was found to contain significantly higher concentrations of rosmarinic acid. The densitometric quantification allowed the analysis of many samples in a short time with reasonable precision (total precision for Mentha spp extracts, 5.1% and 5.8% for UV and fluorescence detection, respectively. The HPTLC data, allied to assays of linoleic acid peroxidation prevention, suggested the potential of M. spicata (52% Trolox® equivalents as a natural source for inhibitors of lipid peroxidation. Conclusions: Densitometry can be used for routine determination and quality control of rosmarinic acid in herbal and formulations containing Mentha species.

Coated Porous Si for High Performance On-Chip Supercapacitors

Science.gov (United States)

Grigoras, K.; Keskinen, J.; Grönberg, L.; Ahopelto, J.; Prunnila, M.

2014-11-01

High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

Ion beam analysis of aluminium in thin layers

International Nuclear Information System (INIS)

Healy, M.J.F.; Pidduck, A.J.; Dollinger, G.; Gorgens, L.; Bergmaier, A.

2002-01-01

This work quantifies aluminium in thin surface and near surface layers. In one example, the layer overlies a thin gallium nitride layer on an aluminium oxide substrate and in a second example the aluminium exists just below the surface of an indium arsenide substrate. The technique of non-Rutherford elastic backscattering of protons was used for the samples where aluminum in the layer of interest needed to be resolved from aluminium in the sapphire substrate and the results were corroborated at the Technische Universitaet Muenchen using heavy ion elastic recoil detection analysis. In the second example, where it was unnecessary to isolate the signal of aluminium in the layer of interest (as the substrate contained no aluminium), then the 27 Al(d,p 01 ) 28 Al nuclear reaction was used. The elastic proton scattering cross section of aluminum was found to vary very rapidly over the energy range of interest

Multi-layer thin-film electrolytes for metal supported solid oxide fuel cells

Science.gov (United States)

Haydn, Markus; Ortner, Kai; Franco, Thomas; Uhlenbruck, Sven; Menzler, Norbert H.; Stöver, Detlev; Bräuer, Günter; Venskutonis, Andreas; Sigl, Lorenz S.; Buchkremer, Hans-Peter; Vaßen, Robert

2014-06-01

A key to the development of metal-supported solid oxide fuel cells (MSCs) is the manufacturing of gas-tight thin-film electrolytes, which separate the cathode from the anode. This paper focuses the electrolyte manufacturing on the basis of 8YSZ (8 mol.-% Y2O3 stabilized ZrO2). The electrolyte layers are applied by a physical vapor deposition (PVD) gas flow sputtering (GFS) process. The gas-tightness of the electrolyte is significantly improved when sequential oxidic and metallic thin-film multi-layers are deposited, which interrupt the columnar grain structure of single-layer electrolytes. Such electrolytes with two or eight oxide/metal layers and a total thickness of about 4 μm obtain leakage rates of less than 3 × 10-4 hPa dm3 s-1 cm-2 (Δp: 100 hPa) at room temperature and therefore fulfill the gas tightness requirements. They are also highly tolerant with respect to surface flaws and particulate impurities which can be present on the graded anode underground. MSC cell tests with double-layer and multilayer electrolytes feature high power densities more than 1.4 W cm-2 at 850 °C and underline the high potential of MSC cells.

Application of thin-layer chromatography in radiochemistry

International Nuclear Information System (INIS)

Maki, Yasuyuki; Murakami, Yukio.

1976-01-01

In relation to the experimental procedures of thin-layer chromatography (TLC) in radiochemistry, the authors explained the preparation and development of radioactive test solutions, the methods of detection by autoradiography of isolated spots and by the calculation of measuring apparatus, and the identification of isolated spots. Next they outlined the carrier-free isolation and purification of nuclides, the quantification in combination with γ-ray spectrum, confirmation of the purity of RI-labeled medical supplies, their application to RI generator, thin-layer electrophoresis, in which electrophoresis and TLC were combined, and the application of this electrophoresis to isolation in recoil chemistry and to analysis and identification in carrier-free chemistry. (Kanao, K.)

Lysergic acid amide as chemical marker for the total ergot alkaloids in rye flour - Determination by high-performance thin-layer chromatography-fluorescence detection.

Science.gov (United States)

Oellig, Claudia

2017-07-21

Ergot alkaloids are generally determined by high-performance liquid chromatography (HPLC) coupled to fluorescence detection (FLD) or mass selective detection, analyzing the individual compounds. However, fast and easy screening methods for the determination of the total ergot alkaloid content are more suitable, since for monitoring only the sum of the alkaloids is relevant. The herein presented screening uses lysergic acid amide (LSA) as chemical marker, formed from ergopeptine alkaloids, and ergometrine for the determination of the total ergot alkaloids in rye with high-performance thin-layer chromatography-fluorescence detection (HPTLC-FLD). An ammonium acetate buffered extraction step was followed by liquid-liquid partition for clean-up before the ergopeptine alkaloids were selectively transformed to LSA and analyzed by HPTLC-FLD on silica gel with isopropyl acetate/methanol/water/25% ammonium hydroxide solution (80:10:3.8:1.1, v/v/v/v) as the mobile phase. The enhanced native fluorescence of LSA and unaffected ergometrine was used for quantitation without any interfering matrix. Limits of detection and quantitation were 8 and 26μg LSA/kg rye, which enables the determination of the total ergot alkaloids far below the applied quality criterion limit for rye. Close to 100% recoveries for different rye flours at relevant spiking levels were obtained. Thus, reliable results were guaranteed, and the fast and efficient screening for the total ergot alkaloids in rye offers a rapid alternative to the HPLC analysis of the individual compounds. Copyright © 2017 Elsevier B.V. All rights reserved.

UV and plasma treatment of thin silver layers and glass surfaces

Energy Technology Data Exchange (ETDEWEB)

Hluschi, J.H. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Helmke, A. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Roth, P. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany); Boewer, R. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Herlitze, L. [Interpane Glasbeschichtungsgesellschaft mbH and Co KG, Sohnreystr. 21, D-37697 Lauenfoerde (Germany); Vioel, W. [University of Applied Sciences and Arts, Von-Ossietzky-Str. 99, D-37085 Goettingen (Germany)]. E-mail: vioel@hawk-hhg.de

2006-11-10

Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of {lambda}=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers.

UV and plasma treatment of thin silver layers and glass surfaces

International Nuclear Information System (INIS)

Hluschi, J.H.; Helmke, A.; Roth, P.; Boewer, R.; Herlitze, L.; Vioel, W.

2006-01-01

Thin silver layers can be modified by treatment with UV radiation or a plasma discharge. UV treatment at a wavelength of λ=308 -bar nm improves the layer properties, thus leading to an enhancement of the layers IR reflectivity. For the purpose of in situ-measurement the sheet resistance is recorded during the process. Due to the Hagen-Rubens-Relation [E. Hagen, H. Rubens, Ann. Phys. 11 (1903) 873]-bar the sheet resistance is linked to the IR reflectivity of thin metal-films. A pretreatment of uncoated glass using a dielectric barrier discharge activates and cleans its surface, thus leading to an increase in adhesion of thin layers

Note: Automatic layer-by-layer spraying system for functional thin film coatings

Science.gov (United States)

Seo, Seongmin; Lee, Sangmin; Park, Yong Tae

2016-03-01

In this study, we have constructed an automatic spray machine for producing polyelectrolyte multilayer films containing various functional materials on wide substrates via the layer-by-layer (LbL) assembly technique. The proposed machine exhibits advantages in terms of automation, process speed, and versatility. Furthermore, it has several features that allow a fully automated spraying operation, such as various two-dimensional spraying paths, control of the flow rate and operating speed, air-assist fan-shaped twin-fluid nozzles, and an optical display. The robot uniformly sprays aqueous mixtures containing complementary (e.g., oppositely charged, capable of hydrogen bonding, or capable of covalent bonding) species onto a large-area substrate. Between each deposition of opposite species, samples are spray-rinsed with deionized water and blow-dried with air. The spraying, rinsing, and drying areas and times are adjustable by a computer program. Twenty-bilayer flame-retardant thin films were prepared in order to compare the performance of the spray-assisted LbL assembly with a sample produced by conventional dipping. The spray-coated film exhibited a reduction of afterglow time in vertical flame tests, indicating that the spray-LbL technique is a simple method to produce functional thin film coatings.

Approximate reflection coefficients for a thin VTI layer

KAUST Repository

Hao, Qi; Stovas, Alexey

2017-01-01

We present an approximate method to derive simple expressions for the reflection coefficients of P- and SV-waves for a thin transversely isotropic layer with a vertical symmetry axis (VTI) embedded in a homogeneous VTI background. The layer

Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

Science.gov (United States)

Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

2017-11-01

Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A chip-type thin-layer electrochemical cell coupled with capillary electrophoresis for online separation of electrode reaction products

Energy Technology Data Exchange (ETDEWEB)

He, Jian-Bo, E-mail: jbhe@hfut.edu.cn; Cui, Ting; Zhang, Wen-Wen; Deng, Ning

2013-07-05

Graphical abstract: -- Highlights: •A new coupling of thin-layer electrolysis with capillary electrophoresis (CE). •Rapid electrolysis, direct sampling followed by online CE separation. •At least 13 products of quercetin oxidation were separated. •Thermodynamic and kinetic parameters were determined from CE peak areas. -- Abstract: A coupling technique of thin-layer electrolysis with high-performance capillary electrophoresis/UV–vis technique(EC/HPCE/UV–vis) is developed for online separation and determination of electrode reaction products. A chip-type thin-layer electrolytic (CTE) cell was designed and fabricated, which contains a capillary channel and a background electrolyte reservoir, allowing rapid electrolysis, direct sampling and online electrophoretic separation. This chip-type setup was characterized based on an electrophoresis expression of Nernst equation that was applied to the redox equilibrium of o-tolidine at different potentials. The utility of the method was demonstrated by separating and determining the electro-oxidation products of quercetin in different pH media. Two main products were always found in the studied time, potential and pH ranges. The variety of products increased not only with increasing potential but also with increasing pH value, and in total, at least 13 products were observed in the electropherograms. This work illustrates a novel example of capillary electrophoresis used online with thin-layer electrolysis to separate and detect electrode reaction products.

A chip-type thin-layer electrochemical cell coupled with capillary electrophoresis for online separation of electrode reaction products

International Nuclear Information System (INIS)

He, Jian-Bo; Cui, Ting; Zhang, Wen-Wen; Deng, Ning

2013-01-01

Graphical abstract: -- Highlights: •A new coupling of thin-layer electrolysis with capillary electrophoresis (CE). •Rapid electrolysis, direct sampling followed by online CE separation. •At least 13 products of quercetin oxidation were separated. •Thermodynamic and kinetic parameters were determined from CE peak areas. -- Abstract: A coupling technique of thin-layer electrolysis with high-performance capillary electrophoresis/UV–vis technique(EC/HPCE/UV–vis) is developed for online separation and determination of electrode reaction products. A chip-type thin-layer electrolytic (CTE) cell was designed and fabricated, which contains a capillary channel and a background electrolyte reservoir, allowing rapid electrolysis, direct sampling and online electrophoretic separation. This chip-type setup was characterized based on an electrophoresis expression of Nernst equation that was applied to the redox equilibrium of o-tolidine at different potentials. The utility of the method was demonstrated by separating and determining the electro-oxidation products of quercetin in different pH media. Two main products were always found in the studied time, potential and pH ranges. The variety of products increased not only with increasing potential but also with increasing pH value, and in total, at least 13 products were observed in the electropherograms. This work illustrates a novel example of capillary electrophoresis used online with thin-layer electrolysis to separate and detect electrode reaction products

High-Quality Ultrathin Gold Layers For Use In Plasmonic And Metamaterials Applications

DEFF Research Database (Denmark)

Sukham, Johneph; Takayama, Osamu; Lavrinenko, Andrei

2018-01-01

The propagation of electromagnetic waves can be manipulated at the nanoscale by surface plasmons supported by ultra thin metal layers. An adhesion layer, with thickness in the order of few nanometerss is used for depositing ultra thin metal gold layers. Cr and Ti are the most popular metallic...... adhesion layers. Apart from them, a non metallic silane based wetting layer like (3-Aminopropyl)trimethoxysilane (APTMS) can be used. The behaviour of the propagating surface plasmons due to the influence of these adhesion layers has not been thoroughly investigated. To study the influence of the adhesion...... layers on propagating plasmons for use in plasmonic and metamaterial applications,we experimentally compared the performances of the ultra-thin gold layers using Cr and APTMS adhesion layers and without any adhesion layer. We show that the gold layers using APTMS adhesion exhibit short range surface...

Effect of inserting of thin Rubrene layer on performance of Organic Light-Emitting Diodes based on Zn(BTz)2

Science.gov (United States)

Tomova, R. L.; Petrova, P. K.; Stoycheva-Topalova, R. T.

2010-11-01

Organic light-emitting diodes (OLEDs) with improved performances are fabricated using a thin (1 nm) yellow-emitting layer of 5,6,11,12-tetraphenylnaphthacene (Rubrene) inserted at different position in green emitting electroluminescent (EL) layer of bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTz)2) in configuration: ITO/PVK:TPD/ Zn(BTz)2 (x nm)/ Rubrene (1 nm)/ Zn(BTz)2 (75-x nm)/Al, where PVK:TPD is a hole transporting layer of N, N'-bis(3-methylphenyl)-N, N'-diphenylbenzidine (TPD) incorporated in poly(N-vinylcarbazole) (PVK) matrix and Al is a cathode. EL spectra predominantly influenced by Rubrene emission when the doping layer is close to (PVK:TPD)/ Zn(BTz)2 (x→ 0-15 nm) and to Zn(BTz)2/Al (x→ 70-75 nm) interfaces and shift toward emission of Zn(BTz)2 increasing the distance of Rubrene from both interfaces (x→35 nm). The same dependence of the EL efficiency on the position of the doping Rubrene layer in the OLED structure was found.

A thin layer fiber-coupled luminescence dosimeter based on Al2O3:C

DEFF Research Database (Denmark)

Klein, F.A.; Greilich, Steffen; Andersen, Claus Erik

2011-01-01

In this paper we present a fiber-coupled luminescent Al2O3:C dosimeter probe with high spatial resolution (0.1 mm). It is based on thin layers of Al2O3:C crystal powder and a UV-cured acrylate monomer composition. The fabrication of the thin layers is described in detail. No influence of the intr......In this paper we present a fiber-coupled luminescent Al2O3:C dosimeter probe with high spatial resolution (0.1 mm). It is based on thin layers of Al2O3:C crystal powder and a UV-cured acrylate monomer composition. The fabrication of the thin layers is described in detail. No influence...... of the introduced polymer host matrix on the dosimetric properties was observed. Depth-dose measurements with the new detectors in a 142.66 MeV proton and 270.55 MeV/u carbon ion beam are presented as example applications. We used an RL protocol with saturated crystals allowing for time-effective measurements...... without sensitivity corrections. For protons, a relative luminescence efficiency hHCP of 0.715 0.014 was found in the Bragg peak. For carbon ions, a value of 0.498 0.001 was found in the entrance channel, 0.205 0.015 in the Bragg peak, and a mean of 0.413 0.050 in the tail region. The mean range...

Investigation of thin polymer layers for biosensor applications

Energy Technology Data Exchange (ETDEWEB)

Saftics, András; Agócs, Emil [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Fodor, Bálint [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Doctoral School of Physics, Faculty of Science, University of Pécs, 7624 Pécs, Ifjúság útja 6 (Hungary); Patkó, Dániel; Petrik, Péter [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, H-8200 Egyetem u.10, Veszprém (Hungary); Kolari, Kai; Aalto, Timo [VTT Technical Research Centre of Finland, PL 1000, Tietotie 3, 02044 Espoo (Finland); Fürjes, Péter [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Horvath, Robert [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, H-8200 Egyetem u.10, Veszprém (Hungary); Kurunczi, Sándor, E-mail: kurunczi.sandor@ttk.mta.hu [Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences–H-1121 Budapest (Hungary); Doctoral School of Molecular- and Nanotechnologies, Faculty of Information Technology, University of Pannonia, H-8200 Egyetem u.10, Veszprém (Hungary)

2013-09-15

Novel biosensors made of polymers may offer advantages over conventional technology such as possibility of mass production and tunability of the material properties. With the ongoing work on the polymer photonic chip fabrication in our project, simple model samples were tested parallel for future immobilization and accessing conditions for applications in typical aqueous buffers. The model samples consist of a thin, high refractive index polyimide film on top of TEOS on Si wafer. These model samples were measured by in situ spectroscopic ellipsometry using different aqueous buffers. The experiments revealed a high drift in aqueous solutions; the drift in the ellipsometric parameters (delta, psi) can be evaluated and presented as changes in thickness and refractive index of the polyimide layer. The first molecular layer of immobilization is based on polyethyleneimine (PEI). The signal for the PEI adsorption was detected on a stable baseline, only after a long conditioning. The stability of polyimide films in aqueous buffer solutions should be improved toward the real biosensor application. Preliminary results are shown on the possibilities to protect the polyimide. Optical Waveguide Lightmode Spectroscopy (OWLS) has been used to demonstrate the shielding effect of the thin TiO{sub 2} adlayer in biosensor applications.

Layer-controllable graphene by plasma thinning and post-annealing

Science.gov (United States)

Zhang, Lufang; Feng, Shaopeng; Xiao, Shaoqing; Shen, Gang; Zhang, Xiumei; Nan, Haiyan; Gu, Xiaofeng; Ostrikov, Kostya (Ken)

2018-05-01

The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene's atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.

Granular and layered ferroelectric–ferromagnetic thin-film nanocomposites as promising materials with high magnetotransmission effect

Energy Technology Data Exchange (ETDEWEB)

Akbashev, A.R. [Department of Materials Science, Moscow State University, 119992 Moscow (Russian Federation); Telegin, A.V., E-mail: telegin@imp.uran.ru [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620990 Ekaterinburg (Russian Federation); Kaul, A.R. [Department of Chemistry, Moscow State University, 119992 Moscow (Russian Federation); Sukhorukov, Yu.P. [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620990 Ekaterinburg (Russian Federation)

2015-06-15

Epitaxial thin films of granular and layered nanocomposites consisting of ferromagnetic perovskite Pr{sub 1–x}Sr{sub x}MnO{sub 3} and ferroelectric hexagonal LuMnO{sub 3} were grown on ZrO{sub 2}(Y{sub 2}O{sub 3}) substrates using metal-organic chemical vapor deposition (MOCVD). A self-organized growth of the granular composite took place in situ as a result of phase separation of the Pr–Sr–Lu–Mn–O system into the perovskite and hexagonal phases. Optical transmission measurements revealed a large negative magnetotransmission effect in the layered nanocomposite over a wide spectral and temperature range. The granular nanocomposite unexpectedly showed an even larger, but positive, magnetotransmission effect at room temperature. - Highlights: • Thin-film ferromagnetic–ferroelectric nanocomposites have been prepared by MOCVD. • Giant change of optical transparency of nanocomposites in magnetic field was detected. • Positive magnetotransmission in the granular nanocomposite was discovered in the IR. • Negative magnetotransmission in the layered nanocomposite was revealed in the IR. • Ferroelectric–ferromangetic nanocomposite is a promising material for optoelectronics.

Granular and layered ferroelectric–ferromagnetic thin-film nanocomposites as promising materials with high magnetotransmission effect

International Nuclear Information System (INIS)

Akbashev, A.R.; Telegin, A.V.; Kaul, A.R.; Sukhorukov, Yu.P.

2015-01-01

Epitaxial thin films of granular and layered nanocomposites consisting of ferromagnetic perovskite Pr 1–x Sr x MnO 3 and ferroelectric hexagonal LuMnO 3 were grown on ZrO 2 (Y 2 O 3 ) substrates using metal-organic chemical vapor deposition (MOCVD). A self-organized growth of the granular composite took place in situ as a result of phase separation of the Pr–Sr–Lu–Mn–O system into the perovskite and hexagonal phases. Optical transmission measurements revealed a large negative magnetotransmission effect in the layered nanocomposite over a wide spectral and temperature range. The granular nanocomposite unexpectedly showed an even larger, but positive, magnetotransmission effect at room temperature. - Highlights: • Thin-film ferromagnetic–ferroelectric nanocomposites have been prepared by MOCVD. • Giant change of optical transparency of nanocomposites in magnetic field was detected. • Positive magnetotransmission in the granular nanocomposite was discovered in the IR. • Negative magnetotransmission in the layered nanocomposite was revealed in the IR. • Ferroelectric–ferromangetic nanocomposite is a promising material for optoelectronics

Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

Science.gov (United States)

Hoenk, Michael E. (Inventor); Greer, Frank (Inventor); Nikzad, Shouleh (Inventor)

2014-01-01

A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

Atomic Layer Control of Thin Film Growth Using Binary Reaction Sequence Chemistry

National Research Council Canada - National Science Library

George, Steven

1997-01-01

Our research is focusing on the atomic layer control of thin film growth. Our goal is to deposit films with precise control of thickness and conformality on both flat and high aspect ratio structures...

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Directory of Open Access Journals (Sweden)

Robert L. Z. Hoye

2015-04-01

Full Text Available Atmospheric pressure spatial atomic layer deposition (AP-SALD has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

Low-temperature atomic layer deposition of TiO2 thin layers for the processing of memristive devices

International Nuclear Information System (INIS)

Porro, Samuele; Conti, Daniele; Guastella, Salvatore; Ricciardi, Carlo; Jasmin, Alladin; Pirri, Candido F.; Bejtka, Katarzyna; Perrone, Denis; Chiolerio, Alessandro

2016-01-01

Atomic layer deposition (ALD) represents one of the most fundamental techniques capable of satisfying the strict technological requirements imposed by the rapidly evolving electronic components industry. The actual scaling trend is rapidly leading to the fabrication of nanoscaled devices able to overcome limits of the present microelectronic technology, of which the memristor is one of the principal candidates. Since their development in 2008, TiO 2 thin film memristors have been identified as the future technology for resistive random access memories because of their numerous advantages in producing dense, low power-consuming, three-dimensional memory stacks. The typical features of ALD, such as self-limiting and conformal deposition without line-of-sight requirements, are strong assets for fabricating these nanosized devices. This work focuses on the realization of memristors based on low-temperature ALD TiO 2 thin films. In this process, the oxide layer was directly grown on a polymeric photoresist, thus simplifying the fabrication procedure with a direct liftoff patterning instead of a complex dry etching process. The TiO 2 thin films deposited in a temperature range of 120–230 °C were characterized via Raman spectroscopy and x-ray photoelectron spectroscopy, and electrical current–voltage measurements taken in voltage sweep mode were employed to confirm the existence of resistive switching behaviors typical of memristors. These measurements showed that these low-temperature devices exhibit an ON/OFF ratio comparable to that of a high-temperature memristor, thus exhibiting similar performances with respect to memory applications

Chemical bath deposition of thin semiconductor films for use as buffer layers in CuInS2 thin film solar cells

International Nuclear Information System (INIS)

Kaufmann, C.A.

2002-01-01

A CulnS 2 thin film solar cell is a multilayered semiconductor device. The solar cells discussed have a layer sequence Mo/CulnS 2 /buffer/i-ZnO/ZnO:Ga, where a heterojunction establishes between the p-type absorber and the n-type front contact. Conventionally the buffer consists of CdS, deposited by chemical bath deposition (CBD). Apart from providing process oriented benefits the buffer layer functions as a tool for engineering the energy band line-up at the heterojunction interface. Motivated through environmental concern and EU legislation it is felt necessary to substitute this potentially toxic layer by an alternative, Cd-free component. This thesis investigates the suitability of various Zn- and In-compounds, in particular In(OH,O) x S y , as alternative buffer layer materials using CBD. Initial experiments were carried out depositing Zn-based compounds from aqueous solutions. Characterization of the layers, the solution and the processed solar cells was performed. This thesis focuses on the investigation of the CBD process chemistry for the deposition of In-compound thin films. A careful study of the morphology and composition of the deposited thin films was conducted using electron microscopy (SEM, HREM), elastic recoil detection analysis, X-ray photoelectron spectroscopy and optical transmission spectroscopy. This allowed conclusions concerning the nucleation and film growth mechanism from the chemical bath. Connections between bath chemistry, different growth phases, layer morphology and solar cell performance were sought and an improved deposition process was developed. As a result, Cd-free CulnS 2 thin film solar cells with efficiencies of up to 10.6%) (total area) could be produced. Overall the substitution of CdS is shown to be possible by different alternative compounds, such as Zn(OH,O) x S y or In(OH,O) x S y . In the case of In(OH,O) x S y , an understanding of the CBD process and the effect of different growth phases on the resulting solar cell

Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

Directory of Open Access Journals (Sweden)

Hui-Ying Li

2015-02-01

Full Text Available Preparation of dense alumina (Al2O3 thin film through atomic layer deposition (ALD provides a pathway to achieve the encapsulation of organic light emitting devices (OLED. Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED.

Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

International Nuclear Information System (INIS)

Xu, Jixian; Sutherland, Brandon R.; Hoogland, Sjoerd; Fan, Fengjia; Sargent, Edward H.; Kinge, Sachin

2015-01-01

Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO 2 layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10 −2  A W −1 and a shot-derived specific detectivity of 3 × 10 9  Jones at 1530 nm wavelength

A general analytical equation for phase diagrams of an N-layer ferroelectric thin film with two surface layers

Energy Technology Data Exchange (ETDEWEB)

Lu, Z X; Teng, B H; Rong, Y H; Lu, X H; Yang, X [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)], E-mail: phytbh@163.com

2010-03-15

Within the framework of effective-field theory with correlations, the phase diagrams of an N-layer ferroelectric thin film with two surface layers are studied by the differential operator technique based on the spin-1/2 transverse Ising model. A general analytical equation for the phase diagram of a ferroelectric thin film with arbitrary layer number as well as exchange interactions and transverse fields is derived, and then the effects of exchange interactions and transverse fields on phase diagrams are discussed for an arbitrary layer number N. Meanwhile, the crossover features, from the ferroelectric-dominant phase diagram (FPD) to the paraelectric-dominant phase diagram (PPD), for various parameters of an N-layer ferroelectric thin film with two surface layers are investigated. As a result, an N-independent common intersection point equation is obtained, and the three-dimensional curved surfaces for the crossover values are constructed. In comparison with the usual mean-field approximation, the differential operator technique with correlations reduces to some extent the ferroelectric features of a ferroelectric thin film.

Blending crystalline/liquid crystalline small molecule semiconductors: A strategy towards high performance organic thin film transistors

Science.gov (United States)

He, Chao; He, Yaowu; Li, Aiyuan; Zhang, Dongwei; Meng, Hong

2016-10-01

Solution processed small molecule polycrystalline thin films often suffer from the problems of inhomogeneity and discontinuity. Here, we describe a strategy to solve these problems through deposition of the active layer from a blended solution of crystalline (2-phenyl[1]benzothieno[3,2-b][1]benzothiophene, Ph-BTBT) and liquid crystalline (2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene, C12-Ph-BTBT) small molecule semiconductors with the hot spin-coating method. Organic thin film transistors with average hole mobility approaching 1 cm2/V s, much higher than that of single component devices, have been demonstrated, mainly due to the improved uniformity, continuity, crystallinity, and stronger intermolecular π-π stacking in blend thin films. Our results indicate that the crystalline/liquid crystalline semiconductor blend method is an effective way to enhance the performance of organic transistors.

Thin-layer voltammetry of soluble species on screen-printed electrodes: proof of concept.

Science.gov (United States)

Botasini, S; Martí, A C; Méndez, E

2016-10-17

Thin-layer diffusion conditions were accomplished on screen-printed electrodes by placing a controlled-weight onto the cast solution and allowing for its natural spreading. The restricted diffusive conditions were assessed by cyclic voltammetry at low voltage scan rates and electrochemical impedance spectroscopy. The relationship between the weight exerted over the drop and the thin-layer thickness achieved was determined, in such a way that the simple experimental set-up designed for this work could be developed into a commercial device with variable control of the thin-layer conditions. The experimental results obtained resemble those reported for the voltammetric features of electroactive soluble species employing electrodes modified with carbon nanotubes or graphene layers, suggesting that the attainment of the benefits reported for these nanomaterials could be done simply by forcing the solution to spread over the screen-printed electrodic system to form a thin layer solution. The advantages of thin-layer voltammetry in the kinetic characterization of quasi-reversible and irreversible processes are highlighted.

Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer.

Science.gov (United States)

Zhang, Zhaojing; Yao, Liyong; Zhang, Yi; Ao, Jianping; Bi, Jinlian; Gao, Shoushuai; Gao, Qing; Jeng, Ming-Jer; Sun, Guozhong; Zhou, Zhiqiang; He, Qing; Sun, Yun

2018-02-01

Double layer distribution exists in Cu 2 SnZnSe 4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double-layer distribution of CZTSe film is eliminated entirely and the formation of MoSe 2 interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSe x mixed atmosphere. It is found that the insufficient reaction between ZnSe and Cu-Sn-Se phases in the bottom of the film is the reason why the double layer distribution of CZTSe film is formed. By increasing Sn content in the metallic precursor, thus making up the loss of Sn because of the decomposition of CZTSe and facilitate the diffusion of liquid Cu 2 Se, the double layer distribution is eliminated entirely. The crystallization of the formed thin film is dense and the grains go through the entire film without voids. And there is no obvious MoSe 2 layer formed between CZTSe and Mo. As a consequence, the series resistance of the solar cell reduces significantly to 0.14 Ω cm 2 and a CZTSe solar cell with efficiency of 7.2% is fabricated.

Successful implementation of the stepwise layer-by-layer growth of MOF thin films on confined surfaces: Mesoporous silica foam as a first case study

KAUST Repository

Shekhah, Osama; Fu, Lei; Sougrat, Rachid; Belmabkhout, Youssef; Cairns, Amy; Giannelis, Emmanuel P.; Eddaoudi, Mohamed

2012-01-01

Here we report the successful growth of highly crystalline homogeneous MOF thin films of HKUST-1 and ZIF-8 on mesoporous silica foam, by employing a layer-by-layer (LBL) method. The ability to control and direct the growth of MOF thin films on confined surfaces, using the stepwise LBL method, paves the way for new prospective applications of such hybrid systems. © 2012 The Royal Society of Chemistry.

High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

Energy Technology Data Exchange (ETDEWEB)

Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

2016-09-01

We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

Ultra-high current density thin-film Si diode

Science.gov (United States)

Wang, Qi [Littleton, CO

2008-04-22

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Stability indicating high performance thin-layer chromatographic method for simultaneous estimation of pantoprazole sodium and itopride hydrochloride in combined dosage form.

Science.gov (United States)

Bageshwar, Deepak; Khanvilkar, Vineeta; Kadam, Vilasrao

2011-11-01

A specific, precise and stability indicating high-performance thin-layer chromatographic method for simultaneous estimation of pantoprazole sodium and itopride hydrochloride in pharmaceutical formulations was developed and validated. The method employed TLC aluminium plates precoated with silica gel 60F 254 as the stationary phase. The solvent system consisted of methanol:water:ammonium acetate; 4.0:1.0:0.5 (v/v/v). This system was found to give compact and dense spots for both itopride hydrochloride ( R f value of 0.55±0.02) and pantoprazole sodium ( R f value of 0.85±0.04). Densitometric analysis of both drugs was carried out in the reflectance-absorbance mode at 289 nm. The linear regression analysis data for the calibration plots showed a good linear relationship with R 2 =0.9988±0.0012 in the concentration range of 100-400 ng for pantoprazole sodium. Also, the linear regression analysis data for the calibration plots showed a good linear relationship with R 2 =0.9990±0.0008 in the concentration range of 200-1200 ng for itopride hydrochloride. The method was validated for specificity, precision, robustness and recovery. Statistical analysis proves that the method is repeatable and selective for the estimation of both the said drugs. As the method could effectively separate the drug from its degradation products, it can be employed as a stability indicating method.

Transient Response of Thin Wire above a Layered Half-Space Using TDIE/FDTD Hybrid Method

Directory of Open Access Journals (Sweden)

Bing Wei

2012-01-01

Full Text Available The TDIE/FDTD hybrid method is applied to calculate the transient responses of thin wire above a lossy layered half-space. The time-domain reflection of the layered half space is computed by one-dimensional modified FDTD method. Then, transient response of thin wire induced by two excitation sources (the incident wave and reflected wave is calculated by TDIE method. Finally numerical results are given to illustrate the feasibility and high efficiency of the presented scheme.

Increased cathode performance using a thin film LSM layer on a structured 8YSZ electrolyte surface

Energy Technology Data Exchange (ETDEWEB)

Herbstritt, D.; Weber, A.; Ivers-Tiffee, E. [Karlsruhe Univ. (T.H.) (DE). Inst. fuer Werkstoffkunde der Elektrotechnik (IWE); Guntow, U.; Mueller, G. [Fraunhofer-Institut fuer Silicatforschung (ISC), Wuerzburg (Germany)

2000-07-01

A considerable part of the power losses in a SOFC single cell occurs due to the polarization resistance of the cathode/electrolyte interface. The resulting high cathodic overvoltage corresponds to an enhanced degradation of the cell. In case of a screen printed LSM cathode layer (LSM: La{sub 1-x}Sr{sub x}MnO{sub 3}) on a YSZ electrolyte substrate (YSZ: Y{sub 2}O{sub 3} stabilised ZrO{sub 2}) the cathodic reaction is generally assumed to be restricted to the three phase boundary (tpb) between cathode, oxidant and the electrolyte surface. The electrochemical active area was increased by a modification of the cathode/electrolyte interface. Single cells with a thin film LSM layer on a structured 8YSZ electrolyte showed a power output of about 0.95 W/cm{sup 2} at 0.7 V cell voltage (950 C; oxidant: air, 0.7 1/min; fuel: hydrogen, 0.5 1/min, 15% fuel utilization). (orig.)

Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

2013-09-02

Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

Effect-directed fingerprints of 77 botanical extracts via a generic high-performance thin-layer chromatography method combined with assays and mass spectrometry.

Science.gov (United States)

Krüger, S; Hüsken, L; Fornasari, R; Scainelli, I; Morlock, G E

2017-12-22

Quantitative effect-directed profiles of 77 industrially and freshly extracted botanicals like herbs, spices, vegetables and fruits, widely used as food ingredients, dietary supplements or traditional medicine, gave relevant information on their quality. It allows the assessment of food, dietary supplements and phytomedicines with regard to potential health-promoting activities. In contrary to sum parameter assays and targeted analysis, chromatography combined with effect-directed analysis allows fast assignment of single active compounds and evaluation of their contribution to the overall activity, originating from a food or botanical sample. High-performance thin-layer chromatography was hyphenated with UV/Vis/FLD detection and effect-directed analysis, using the 2,2-diphenyl-1-picrylhydrazyl radical, Gram-negative Aliivibrio fischeri, Gram-positive Bacillus subtilis, acetylcholinesterase and tyrosinase assays. Bioactive compounds of interest were eluted using an elution head-based interface and further characterized by electrospray ionization (high-resolution) mass spectrometry. This highly streamlined workflow resulted in a hyphenated HPTLC-UV/Vis/FLD-EDA-ESI + /ESI - -(HR)MS method. The excellent quantification power of the method was shown on three compounds. For rosmarinic acid, contents ranged from 4.5mg/g (rooibos) to 32.6mg/g (rosemary), for kaempferol-3-glucoside from 0.6mg/g (caraway) to 4.4mg/g (wine leaves), and for quercetin-3-glucoside from 1.1mg/g (hawthorn leaves) to 17.7mg/g (thyme). Three mean repeatabilities (%RSD) over 18 quantifications for the three compounds were ≤2.2% and the mean intermediate precision over three different days (%RSD, n=3) was 5.2%. Copyright © 2017 Elsevier B.V. All rights reserved.

High Performance Nano-Constituent Buffer Layer Thin Films to Enable Low Cost Integrated On-the-Move Communications Systems

National Research Council Canada - National Science Library

Cole, M. W; Nothwang, W. D; Hubbard, C; Ngo, E; Hirsch, S

2004-01-01

Successful integration of paraelectric Ba1-xSrxTiO3 (BST) based thin films with affordable Si substrates has a potential significant commercial impact as the demand for high-frequency tunable devices intensifies...

Estimation of optical constants of a bio-thin layer (onion epidermis), using SPR spectroscopy

International Nuclear Information System (INIS)

Rehman, Saif-ur-; Hayashi, Shinji; Sekkat, Zouheir; Mumtaz, Huma; Shaukat, S F

2014-01-01

We estimate the optical constants of a biological thin layer (Allium cepa) by surface plasmon resonance (SPR) spectroscopy. For this study, the fresh inner thin epidermis of an onion bulb was used and stacked directly on gold (Au) and silver (Ag) film surfaces in order to identify the shift in SPR mode of each metal film at an operating wavelength of 632.8 nm. The thickness and dielectric constants of the biological thin layer were determined by matching the experimental SPR curves to theoretical ones. The thickness and roughness of bare Au and Ag thin films were also measured by atomic force microscopy (AFM); the results of which are in good agreement with those obtained through experiment. Due to the high surface roughness of the natural onion epidermis layer, AFM could not measure the exact thickness of an onion epidermis. It is estimated that the value of the real part of the dielectric constant of an onion epidermis is between the dielectric constants of water and air. (paper)

Thin-Layer Solutions of the Helmholtz and Related Equations

KAUST Repository

Ockendon, J. R.

2012-01-01

This paper concerns a certain class of two-dimensional solutions to four generic partial differential equations-the Helmholtz, modified Helmholtz, and convection-diffusion equations, and the heat conduction equation in the frequency domain-and the connections between these equations for this particular class of solutions.S pecifically, we consider thin-layer solutions, valid in narrow regions across which there is rapid variation, in the singularly perturbed limit as the coefficient of the Laplacian tends to zero.F or the wellstudied Helmholtz equation, this is the high-frequency limit and the solutions in question underpin the conventional ray theory/WKB approach in that they provide descriptions valid in some of the regions where these classical techniques fail.E xamples are caustics, shadow boundaries, whispering gallery, and creeping waves and focusing and bouncing ball modes.It transpires that virtually all such thin-layer models reduce to a class of generalized parabolic wave equations, of which the heat conduction equation is a special case. Moreover, in most situations, we will find that the appropriate parabolic wave equation solutions can be derived as limits of exact solutions of the Helmholtz equation.W e also show how reasonably well-understood thin-layer phenomena associated with any one of the four generic equations may translate into less well-known effects associated with the others.In addition, our considerations also shed some light on the relationship between the methods of matched asymptotic, WKB, and multiple-scales expansions. © 2012 Society for Industrial and Applied Mathematics.

Sol-gel-processed yttrium-doped NiO as hole transport layer in inverted perovskite solar cells for enhanced performance

Science.gov (United States)

Hu, Zijun; Chen, Da; Yang, Pan; Yang, Lijun; Qin, Laishun; Huang, Yuexiang; Zhao, Xiaochong

2018-05-01

In this work, high-performance inverted planar perovskite solar cells (PSCs) using sol-gel processed Y-doped NiO thin films as hole transport layer (HTL) were demonstrated. Y-doped NiO thin films containing different Y doping concentrations were successfully prepared through a simple sol-gel process. The Y doping could significantly improve the electrical conductivity of NiO thin film, and the photovoltaic performance of Y-doped NiO HTL-based PSC devices outperformed that of the pristine NiO HTL-based device. Notably, the PSC using a 5%Y-NiO HTL exhibited the champion performance with an open-circuit voltage (Voc) of 1.00 V, a short circuit current density (Jsc) of 23.82 mA cm-2, a fill factor (FF) of 68% and a power conversion efficiency (PCE) of 16.31%, resulting in a 27.62% enhancement in PCE in comparison with the NiO device. The enhanced performance of the Y-doped NiO device could be attributed to the improved hole mobility, the high quality compact active layer morphology, the more efficient charge extraction from perovskite absorber as well as the lower recombination probability of charge carriers. Thus, this work provides a simple and effective approach to improve the electrical conductivity of p-type NiO thin films for use as a promising HTL in high performance PSCs.

Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

Energy Technology Data Exchange (ETDEWEB)

Xu, Jixian; Sutherland, Brandon R.; Hoogland, Sjoerd; Fan, Fengjia; Sargent, Edward H., E-mail: ted.sargent@utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Kinge, Sachin [Advanced Technology, Materials and Research, Research and Development, Hoge Wei 33- Toyota Technical Centre, B-1930 Zaventem (Belgium)

2015-10-12

Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO{sub 2} layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10{sup −2} A W{sup −1} and a shot-derived specific detectivity of 3 × 10{sup 9} Jones at 1530 nm wavelength.

Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

International Nuclear Information System (INIS)

Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

2006-01-01

Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

Microstructure and mechanical behavior of a shape memory Ni-Ti bi-layer thin film

Energy Technology Data Exchange (ETDEWEB)

Mohri, Maryam [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Nili-Ahmadabadi, Mahmoud, E-mail: nili@ut.ac.ir [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Center of Excellence for High Performance Materials, University of Tehran, Tehran (Iran, Islamic Republic of); Ivanisenko, Julia [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Schwaiger, Ruth [Karlsruhe Institute of Technology, Institute for Applied Materials, 76021 Karlsruhe (Germany); Hahn, Horst; Chakravadhanula, Venkata Sai Kiran [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany)

2015-05-29

Two different single-layers and a bi-layer Ni-Ti thin films with chemical compositions of Ni{sub 45}Ti{sub 50}Cu{sub 5}, Ni{sub 50.8}Ti{sub 49.2} and Ni{sub 50.8}Ti{sub 49.2}/Ni{sub 45}Ti{sub 50}Cu{sub 5} (numbers indicate at.%) determined by energy dispersive X-ray spectroscopy were deposited on Si (111) substrates using DC magnetron sputtering. The structures, surface morphology and transformation temperatures of annealed thin films at 500 °C for 15 min and 1 h were studied using grazing incidence X-ray diffraction, transmission electron microscopy (TEM), atomic force microscopy and differential scanning calorimetry (DSC), respectively. Nanoindentation was used to characterize the mechanical properties. The DSC and X-ray diffraction results indicated the austenitic structure of the Ni{sub 50.8}Ti{sub 49.2} and martensitic structure of the Ni{sub 45}Ti{sub 50}Cu{sub 5} thin films while the bi-layer was composed of austenitic and martensitic thin films. TEM study revealed that copper encourages crystallization in the bi-layer such that crystal structure containing nano-precipitates in the Ni{sub 45}Ti{sub 50}Cu{sub 5} layer was detected after 15 min annealing while the Ni{sub 50.8}Ti{sub 49.2} layer crystallized after 60 min at 500 °C. Furthermore, after annealing at 500 °C for 15 min, a precipitate free zone and thin layer amorphous were observed closely to the interface in the top layer. The bi-layer was completely crystallized at 500 °C for 1 h and the orientation of the Ni-rich precipitates indicated a stress gradient in the bi-layer. The bi-layer thin film showed different transformation temperatures and mechanical behavior from the single-layers. The developed bi-layer has different phase transformation temperatures, the higher temperatures of shape memory effect and lower temperature of pseudo-elastic behavior compared to the single-layers. Also, the bi-layer thin film exhibited a combined pseudo-elastic behavior and shape memory effect with a reduced

Layered double hydroxides/polymer thin films grown by matrix assisted pulsed laser evaporation

Energy Technology Data Exchange (ETDEWEB)

Birjega, R.; Matei, A.; Mitu, B.; Ionita, M.D.; Filipescu, M.; Stokker-Cheregi, F.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest–Magurele (Romania); Zavoianu, R.; Pavel, O.D. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania); Corobea, M.C. [National R. and S. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021, Bucharest (Romania)

2013-09-30

Due to their highly tunable properties, layered double hydroxides (LDHs) are an emerging class of the favorably layered crystals used for the preparation of multifunctional polymer/layered crystal nanocomposites. In contrast to cationic clay materials with negatively charge layers, LDHs are the only host lattices with positively charged layers (brucite-like), with interlayer exchangeable anions and intercalated water. In this work, the deposition of thin films of Mg and Al based LDH/polymers nanocomposites by laser techniques is reported. Matrix assisted pulsed laser evaporation was the method used for thin films deposition. The Mg–Al LDHs capability to act as a host for polymers and to produce hybrid LDH/polymer films has been investigated. Polyethylene glycol with different molecular mass compositions and ethylene glycol were used as polymers. The structure and surface morphology of the deposited LDH/polymers films were examined by X-ray diffraction, Fourier transform infra-red spectroscopy, atomic force microscopy and scanning electron microscopy. - Highlights: • Hybrid composites deposited by matrix assisted pulsed laser evaporation (MAPLE). • Mg–Al layered double hydroxides (LDH) and polyethylene glycol (PEG) are used. • Mixtures of PEG1450 and LDH were deposited by MAPLE. • Deposited thin films preserve the properties of the starting material. • The film wettability can be controlled by the amount of PEG.

Voltammetric Thin-Layer Ionophore-Based Films: Part 2. Semi-Empirical Treatment.

Science.gov (United States)

Yuan, Dajing; Cuartero, Maria; Crespo, Gaston A; Bakker, Eric

2017-01-03

This work reports on a semiempirical treatment that allows one to rationalize and predict experimental conditions for thin-layer ionophore-based films with cation-exchange capacity read out with cyclic voltammetry. The transition between diffusional mass transport and thin-layer regime is described with a parameter (α), which depends on membrane composition, diffusion coefficient, scan rate, and electrode rotating speed. Once the thin-layer regime is fulfilled (α = 1), the membrane behaves in some analogy to a potentiometric sensor with a second discrimination variable (the applied potential) that allows one to operate such electrodes in a multianalyte detection mode owing to the variable applied ion-transfer potentials. The limit of detection of this regime is defined with a second parameter (β = 2) and is chosen in analogy to the definition of the detection limit for potentiometric sensors provided by the IUPAC. The analytical equations were validated through the simulation of the respective cyclic voltammograms under the same experimental conditions. While simulations of high complexity and better accuracy satisfactorily reproduced the experimental voltammograms during the forward and backward potential sweeps (companion paper 1), the semiempirical treatment here, while less accurate, is of low complexity and allows one to quite easily predict relevant experimental conditions for this emergent methodology.

Thin layer activation techniques in research and industry

International Nuclear Information System (INIS)

Conlon, T.W.

1993-01-01

The following key application of thin layer activation technique (TLA) are discussed: ion-erosion in fusion tokamaks, bio-engineering technology, automobile industry. Future developments of the techniques, such as fission fragment TLA, multi-layer TLA and recoil implantation are discussed as well. 7 refs, 6 figs, 1 tab

Effect of inserting of thin Rubrene layer on performance of Organic Light-Emitting Diodes based on Zn(BTz){sub 2}

Energy Technology Data Exchange (ETDEWEB)

Tomova, R L; Petrova, P K; Stoycheva-Topalova, R T, E-mail: reni@clf.bas.b [Institute of optical materials and technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, ' Acad. G. Bonchev' str. bl. 109, 1113 Sofia (Bulgaria)

2010-11-01

Organic light-emitting diodes (OLEDs) with improved performances are fabricated using a thin (1 nm) yellow-emitting layer of 5,6,11,12-tetraphenylnaphthacene (Rubrene) inserted at different position in green emitting electroluminescent (EL) layer of bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTz){sub 2}) in configuration: ITO/PVK:TPD/ Zn(BTz){sub 2} (x nm)/ Rubrene (1 nm)/ Zn(BTz){sub 2} (75-x nm)/Al, where PVK:TPD is a hole transporting layer of N, N'-bis(3-methylphenyl)-N, N'-diphenylbenzidine (TPD) incorporated in poly(N-vinylcarbazole) (PVK) matrix and Al is a cathode. EL spectra predominantly influenced by Rubrene emission when the doping layer is close to (PVK:TPD)/ Zn(BTz){sub 2} (x{yields} 0-15 nm) and to Zn(BTz){sub 2}/Al (x{yields} 70-75 nm) interfaces and shift toward emission of Zn(BTz){sub 2} increasing the distance of Rubrene from both interfaces (x{yields}35 nm). The same dependence of the EL efficiency on the position of the doping Rubrene layer in the OLED structure was found.

Thin layer fibres are a knotty problem

International Nuclear Information System (INIS)

Anon.

1996-01-01

Concern that emergency core cooling system (ECCS) strainers can be blocked by insulation debris has been generated by an incident at the Swedish Barsebaeck-2 BWR in 1992 and two subsequent incidents at the Perry and Limerick BWR plants in the USA. Recent studies are reported which show that blockage of the small, passive suction type strainers common to these and many other BWRs can occur when only very small quantities of fibrous material present in the suppression pool combine with particulates such as corrosion products to form thin layers on the strainer surface. Layers only a few millimetres thick lead to extremely high head losses on the strainer surface and can cause cavitation in the ECCS pumps. It is concluded that the most practical reliable and cost effective solution is to replace the small strainers with larger ones. (UK)

Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

Science.gov (United States)

Repins, Ingrid L.; Kuciauskas, Darius

2015-07-07

A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

Using an ultra-thin non-doped orange emission layer to realize high efficiency white organic light-emitting diodes with low efficiency roll-off

Energy Technology Data Exchange (ETDEWEB)

Zhu, Liping; Chen, Jiangshan; Ma, Dongge, E-mail: mdg1014@ciac.ac.cn [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate University of the Chinese Academy of Sciences, Changchun 130022 (China); Zhao, Yongbiao [Luminous Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Zhang, Hongmei [Department of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China)

2014-06-28

By adopting an ultra-thin non-doped orange emission layer sandwiched between two blue emission layers, high efficiency white organic light-emitting diodes (WOLEDs) with reduced efficiency roll-off were fabricated. The optimized devices show a balanced white emission with Internationale de L'Eclairage of (0.41, 0.44) at the luminance of 1000 cd/m{sup 2}, and the maximum power efficiency, current efficiency (CE), and external quantum efficiency reach 63.2 lm/W, 59.3 cd/A, and 23.1%, which slightly shift to 53.4 lm/W, 57.1 cd/A, and 22.2% at 1000 cd/m{sup 2}, respectively, showing low efficiency roll-off. Detailed investigations on the recombination zone and the transient electroluminescence (EL) clearly reveal the EL processes of the ultra-thin non-doped orange emission layer in WOLEDs.

Evidence for moving of threading dislocations during the VPE growth in GaN thin layers

Energy Technology Data Exchange (ETDEWEB)

Kuwano, Noriyuki [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Miyake, Hideto; Hiramatsu, Kazumasa [Department of Electrical and Electronic Engineering, Mie University, Tsu, Mie 514-8507 (Japan); Amano, Hiroshi [Graduate School of Engineering, Akasaki Research Center, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Akasaki, Isamu [Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502 (Japan)

2011-05-15

Cross-sectional transmission electron microscope (TEM) observation was performed in detail to analyze the morphology of threading dislocations (TDs) in GaN thin layers with various thicknesses. The GaN layers were overgrown on an Al{sub 0.28}Ga{sub 0.72}N layer by the metal-organic vapor-phase epitaxy (MOVPE) method. In a GaN layer about 50 nm in thickness, TDs running up in the AlGaN layer pass into the GaN layer and most of them reach the top surface without bending. In thicker GaN layers, on the other hand, many of TDs form a hairpin-configuration on or above the interface of GaN and AlGaN to be annihilated. This difference in morphology of TDs indicates that the TDs have moved down inside the GaN layer. Since the formation of hairpins is attributed to a stress-relief, there should be an extra half-plane between the paired TDs. Therefore, the movement of TDs should be of ''climb motion''. Another example of possible TD movement inside a GaN layer is also described. It is emphasized that the possibility of TD-movements inside the thin film crystal during the growth should be taken into account in analysis of thin-layer growth through the behavior of TDs (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Estimation of boswellic acids from market formulations of Boswellia serrata extract and 11-keto beta-boswellic acid in human plasma by high-performance thin-layer chromatography.

Science.gov (United States)

Shah, Shailesh A; Rathod, Ishwarsinh S; Suhagia, Bhanubhai N; Patel, Dharmesh A; Parmar, Vijay K; Shah, Bharat K; Vaishnavi, Vikas M

2007-04-01

A rapid and sensitive high-performance thin-layer chromatographic (HPTLC) method was developed and validated for the quantitative estimation of boswellic acids in formulation containing Boswellia serrata extract (BSE) and 11-keto beta-boswellic acid in human plasma. Simple extraction method was used for isolation of boswellic acid from formulation sample and acidified plasma sample. The isolated samples were chromatographed on silica gel 60F(254)-TLC plates, developed using ternary-solvent system (hexane-chloroform-methanol, 5:5:0.5, v/v) and scanned at 260 nm. The linearity range for 11-KBA spiked in 1 ml of plasma was 29.15-145.75 ng with average recovery of 91.66%. The limit of detection and limit of quantification for 11-KBA in human plasma were found to be 8.75 ng/ml and 29.15 ng/ml. The developed method was successfully applied for the assay of market formulations containing BSE and to determine plasma level of 11-keto beta-boswellic acid in a clinical pilot study.

Mathematical modeling of thin layer drying of pistachio by using solar energy

Energy Technology Data Exchange (ETDEWEB)

Midilli, A [University of Nigde (Turkey). Dept. of Mechanical Engineering; Kucuk, H [Karadeniz Technical Univ., Trabzon (Turkey). Dept. of Mechanical Engineering

2003-05-01

This paper presents a mathematical modeling of thin layer forced and natural solar drying of shelled and unshelled pistachio samples. In order to estimate and select the suitable form of solar drying curves, eight different mathematical models, which are semi-theoretical and/or empirical, were applied to the experimental data and compared according to their coefficients of determination (r,{chi}{sup 2}), which were predicted by non-linear regression analysis using the Statistical Computer Program. It was deduced that the logarithmic model could sufficiently describe thin layer forced solar drying of shelled and unshelled pistachio, while the two term model could define thin layer natural solar drying of these products in evaluation by considering the coefficients of determination, r{sub sfsd}=0.9983, {chi}{sup 2}{sub sfsd}=2.697x10{sup -5}; r{sub ufsd}=0.9990, {chi}{sup 2}{sub ufsd}=1.639x10{sup -5} for thin layer forced solar drying and r{sub snsd}=0.9990, {chi}{sup 2}{sub snsd}=3.212x10{sup -6}; r{sub unsd}=0.9970, {chi}{sup 2}{sub unsd}=4.590x10{sup -5} for thin layer natural solar drying. (Author)

Formation of hydrated layers in PMMA thin films in aqueous solution

Energy Technology Data Exchange (ETDEWEB)

Akers, Peter W. [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); Nelson, Andrew R.J. [The Bragg Institute, Australian Nuclear Science and Technology Organisation, Menai, NSW (Australia); Williams, David E. [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); MacDiarmid Institute of Advanced Materials and Nanotechnology, Wellington (New Zealand); McGillivray, Duncan J., E-mail: d.mcgillivray@auckland.ac.nz [School of Chemical Sciences, University of Auckland, Auckland (New Zealand); MacDiarmid Institute of Advanced Materials and Nanotechnology, Wellington (New Zealand)

2015-10-30

Graphical abstract: - Highlights: • Homogeneous thin PMMA films prepared on Si/SiOx substrates and measured in air and water. • Reproducible formation of highly hydrated layer containing 50% water at the PMMA/SiOx interface. • When heated the films swell at 50 °C without loss of material. • Upon re-cooling to 25 °C the surface roughens and material is lost. - Abstract: Neutron reflectometry (NR) measurements have been made on thin (70–150 Å) poly(methylmethacrylate) (PMMA) films on Si/SiOx substrates in aqueous conditions, and compared with parameters measured using ellipsometry and X-Ray reflectometry (XRR) on dry films. All techniques show that the thin films prepared using spin-coating techniques were uniform and had low roughness at both the silicon and subphase interfaces, and similar surface energetics to thicker PMMA films. In aqueous solution, NR measurements at 25 °C showed that PMMA forms a partially hydrated layer at the SiOx interface 10 Å under the film, while the bulk film remains intact and contains around 4% water. Both the PMMA film layer and the sublayer showed minimal swelling over a period of 24 h. At 50 °C, PMMA films in aqueous solution roughen and swell, without loss of PMMA material at the surface. After cooling back to 25 °C, swelling and roughening increases further, with loss of material from the PMMA layer.

Formation of hydrated layers in PMMA thin films in aqueous solution

International Nuclear Information System (INIS)

Akers, Peter W.; Nelson, Andrew R.J.; Williams, David E.; McGillivray, Duncan J.

2015-01-01

Graphical abstract: - Highlights: • Homogeneous thin PMMA films prepared on Si/SiOx substrates and measured in air and water. • Reproducible formation of highly hydrated layer containing 50% water at the PMMA/SiOx interface. • When heated the films swell at 50 °C without loss of material. • Upon re-cooling to 25 °C the surface roughens and material is lost. - Abstract: Neutron reflectometry (NR) measurements have been made on thin (70–150 Å) poly(methylmethacrylate) (PMMA) films on Si/SiOx substrates in aqueous conditions, and compared with parameters measured using ellipsometry and X-Ray reflectometry (XRR) on dry films. All techniques show that the thin films prepared using spin-coating techniques were uniform and had low roughness at both the silicon and subphase interfaces, and similar surface energetics to thicker PMMA films. In aqueous solution, NR measurements at 25 °C showed that PMMA forms a partially hydrated layer at the SiOx interface 10 Å under the film, while the bulk film remains intact and contains around 4% water. Both the PMMA film layer and the sublayer showed minimal swelling over a period of 24 h. At 50 °C, PMMA films in aqueous solution roughen and swell, without loss of PMMA material at the surface. After cooling back to 25 °C, swelling and roughening increases further, with loss of material from the PMMA layer.

Electromagnetic shielding effectiveness of a thin silver layer deposited onto PET film via atmospheric pressure plasma reduction

Science.gov (United States)

Oh, Hyo-Jun; Dao, Van-Duong; Choi, Ho-Suk

2018-03-01

This study presents the first use of a plasma reduction reaction under atmospheric pressure to fabricate a thin silver layer on polyethylene terephthalate (PET) film without the use of toxic chemicals, high voltages, or an expensive vacuum apparatus. The developed film is applied to electromagnetic interference (EMI) shielding. After repeatedly depositing a silver layer through a plasma reduction reaction on PET, we can successfully fabricate a uniformly deposited thin silver layer. It was found that both the particle size and film thickness of thin silver layers fabricated at different AgNO3 concentrations increase with an increase in the concentration of AgNO3. However, the roughness of the thin silver layer decreases when increasing the concentration of AgNO3 from 100 to 500 mM, and the roughness increases with a further increase in the concentration of AgNO3. The EMI shielding effectiveness (SE) of the film is measured in the frequency range of 0.045 to 1 GHz. As a result of optimizing the electrical conductivity by measuring sheet resistance of the thin silver layer, the film fabricated from 500 mM AgNO3 exhibits the highest EMI SE among all fabricated films. The maximum values of the EMI SE are 60.490 dB at 0.1 GHz and 54.721 dB at 1.0 GHz with minimum sheet resistance of 0.244 Ω/□. Given that the proposed strategy is simple and effective, it is promising for fabricating various low-cost metal films with high EMI SE.

Experimental Studies on the Fire Behaviour of High Performance Concrete Thin Plates

DEFF Research Database (Denmark)

Hulin, Thomas; Hodicky, Kamil; Schmidt, Jacob Wittrup

2015-01-01

In recent decades, the use of structural high performance concrete (HPC) sandwich panels made with thin plates has increased as a response to modern environmental challenges. Fire endurance is a requirement in structural HPC elements, as for most structural elements. This paper presents experimen......In recent decades, the use of structural high performance concrete (HPC) sandwich panels made with thin plates has increased as a response to modern environmental challenges. Fire endurance is a requirement in structural HPC elements, as for most structural elements. This paper presents....... The parametric assessment of the specimen performance included: thickness of the specimen, testing apparatus, and concrete mix (both with and without polypropylene fibres). The results verified the ability of H-TRIS to impose an equivalent thermal boundary condition to that imposed during a standard furnace test......, with good repeatability, and at comparatively low economic and temporal costs. The results demonstrated that heat induced concrete spalling occurred 1 to 5 min earlier, and in a more destructive manner, for thinner specimens. An analysis is presented combining the thermal material degradation, vapour pore...

Critical Transitions in Thin Layer Turbulence

Science.gov (United States)

Benavides, Santiago; Alexakis, Alexandros

2017-11-01

We investigate a model of thin layer turbulence that follows the evolution of the two-dimensional motions u2 D (x , y) along the horizontal directions (x , y) coupled to a single Fourier mode along the vertical direction (z) of the form uq (x , y , z) = [vx (x , y) sin (qz) ,vy (x , y) sin (qz) ,vz (x , y) cos (qz) ] , reducing thus the system to two coupled, two-dimensional equations. Its reduced dimensionality allows a thorough investigation of the transition from a forward to an inverse cascade of energy as the thickness of the layer H = π / q is varied.Starting from a thick layer and reducing its thickness it is shown that two critical heights are met (i) one for which the forward unidirectional cascade (similar to three-dimensional turbulence) transitions to a bidirectional cascade transferring energy to both small and large scales and (ii) one for which the bidirectional cascade transitions to a unidirectional inverse cascade when the layer becomes very thin (similar to two-dimensional turbulence). The two critical heights are shown to have different properties close to criticality that we are able to analyze with numerical simulations for a wide range of Reynolds numbers and aspect ratios. This work was Granted access to the HPC resources of MesoPSL financed by the Region Ile de France and the project Equip@Meso (reference ANR-10-EQPX-29-01).

Mesoscopic layered structure in conducting polymer thin film fabricated by potential-programmed electropolymerization

Energy Technology Data Exchange (ETDEWEB)

Fujitsuka, Mamoru (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Nakahara, Reiko (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Iyoda, Tomokazu (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Shimidzu, Takeo (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Tomita, Shigehisa (Toray Research Center Co., Ltd., Shiga (Japan)); Hatano, Yayoi (Toray Research Center Co., Ltd., Shiga (Japan)); Soeda, Fusami (Toray Research Center Co., Ltd., Shiga (Japan)); Ishitani, Akira (Toray Research Center Co., Ltd., Shiga (Japan)); Tsuchiya, Hajime (Nitto Technical Information Center Co., Ltd., Shimohozumi Ibaraki, Osaka (Japan)); Ohtani, Akira (Central Research Lab., Nitto Denko Co., Ltd., Shimohozumi Ibaraki, Osaka (Japan))

1992-11-01

Mesoscopic layered structures in conducting polymer thin films are fabricated by the potential-programmed electropolymerization method. High lateral quality in the layered structure is realized by the improvement of polymerization conditions, i.e., a mixture of pyrrole and bithiophene as monomers, a silicon single-crystal wafer as a working electrode and propylene carbonate as a solvent. SIMS depth profiling of the resulting layered films indicates a significant linear correlation between the electric charge passed and the thickness of the individual layers on a 100 A scale. (orig.)

High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

KAUST Repository

Yang, Zhenqian; Deng, Yuhao; Zhang, Xiaowei; Wang, Suo; Chen, Huazhou; Yang, Sui; Khurgin, Jacob; Fang, Nicholas X.; Zhang, Xiang; Ma, Renmin

2018-01-01

The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial

Ion exchange of alkaline metals on the thin-layer zinc ferrocyanide

International Nuclear Information System (INIS)

Betenekov, N.D.; Buklanov, G.V.; Ipatova, E.G.; Korotkin, Yu.S.

1991-01-01

Basic regularities of interphase distribution in the system of thin-layer sorbent on the basis of mixed zinc ferrocyanide (FZ)-alkaline metal solution (Na, K, Rb, Cs, Fr) in the column chromatography made are studied. It is established that interphase distribution of microgram amounts of alkaline metals in the systems thin-layer FZ-NH 4 NO 3 electrolyte solutions is of ion-exchange character and subjected to of law effective mass. It is shown that FZ thin-layer material is applicable for effective chromatographic separation of alkaline metal trace amounts. An approach to the choice of a conditions of separate elution of Na, K, Rb, Cs, Fr in the column chromatography mode

Resistivity scaling due to electron surface scattering in thin metal layers

Science.gov (United States)

Zhou, Tianji; Gall, Daniel

2018-04-01

The effect of electron surface scattering on the thickness-dependent electrical resistivity ρ of thin metal layers is investigated using nonequilibrium Green's function density functional transport simulations. Cu(001) thin films with thickness d =1 -2 nm are used as a model system, employing a random one-monolayer-high surface roughness and frozen phonons to cause surface and bulk scattering, respectively. The zero-temperature resistivity increases from 9.7 ±1.0 μ Ω cm at d =1.99 nm to 18.7 ±2.6 μ Ω cm at d =0.9 0 nm, contradicting the asymptotic T =0 prediction from the classical Fuchs-Sondheimer model. At T =9 00 K, ρ =5.8 ±0.1 μ Ω cm for bulk Cu and ρ =13.4 ±1.1 and 22.5 ±2.4 μ Ω cm for layers with d =1.99 and 0.90 nm, respectively, indicating an approximately additive phonon contribution which, however, is smaller than for bulk Cu or atomically smooth layers. The overall data indicate that the resistivity contribution from surface scattering is temperature-independent and proportional to 1 /d , suggesting that it can be described using a surface-scattering mean-free path λs for 2D transport which is channel-independent and proportional to d . Data fitting indicates λs=4 ×d for the particular simulated Cu(001) surfaces with a one-monolayer-high surface roughness. The 1 /d dependence deviates considerably from previous 1 /d2 predictions from quantum models, indicating that the small-roughness approximation in these models is not applicable to very thin (<2 nm) layers, where the surface roughness is a considerable fraction of d .

Wavy channel Thin Film Transistor for area efficient, high performance and low power applications

KAUST Repository

Hanna, Amir

2014-06-01

We report a new Thin Film Transistor (TFT) architecture that allows expansion of the device width using wavy (continuous without separation) fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.4x increase in \\'ON\\' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar \\'OFF\\' current value, similar to 100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers a pragmatic opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications without any limitation any TFT materials.

Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films

International Nuclear Information System (INIS)

Zhang, Jingbo; Sun, Chuanzhen; Bai, Shouli; Luo, Ruixian; Chen, Aifan; Sun, Lina; Lin, Yuan

2013-01-01

ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (J sc ). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the J sc and conversion efficiency can reach a maximum of 8.36 mA cm −2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%)

Modification of thin-layer systems by swift heavy ions

International Nuclear Information System (INIS)

Bolse, W.; Schattat, B.; Feyh, A.

2003-01-01

The electronic energy loss of swift heavy ions (MeV/amu) within a solid results in a highly excited cylindrical zone of some nm in diameter, within which all atoms may be in motion for some tens of ps (transient local melting). After cooling down, a defect-rich or even amorphous latent track is left in many cases, especially in insulating materials. The resulting property alterations (density, micro-structure, morphology, phase composition, etc.) have been investigated for many bulk materials, while only very few experiments have been carried out with thin-film systems. In the present paper, a summary will be given of our studies on the transport of matter in thin-film packages induced by irradiation with high-energy ions. These is, on the one hand, atomic mixing at the interfaces, which is especially pronounced in ceramic systems and which seems to occur by interdiffusion in the molten ion track. On the other hand, we have discovered a self-organisation phenomenon in swift-heavy-ion-irradiated NiO layers, which at low fluences first showed periodic cracking perpendicular to the projected beam direction. After application of high fluences, the NiO layer was reorganised in 100-nm-thick and 1-μm-high NiO lamellae of the same separation distance (1-3 μm) and orientation as found for the cracks. Both effects can be attributed to transient melting of the material surrounding the ion trajectory. (orig.)

High performance hydrophilic pervaporation composite membranes for water desalination

KAUST Repository

Liang, Bin

2014-08-01

A three-layer thin film nanofibrous pervaporation composite (TFNPVC) membrane was prepared by sequential deposition using electrospraying/electrospinning. The poly(vinyl alcohol) (PVA) top barrier layer was first electrosprayed on aluminum foil and its thickness can be easily controlled by adjusting the collecting time. Next a polyacrylonitrile (PAN) nanofibrous scaffold was deposited by electrospinning as a mid-layer support. A nonwoven PET layer is used to complete the composite membrane. The pervaporation desalination performance of TFNPVC membranes was tested using NaCl solutions at 100. Pa and at room temperature. The TFNPVC membranes show excellent desalination performance (high water flux and salt rejection >. 99.5%) for different salt concentrations with virtually no change in performance after 50. h of operation. © 2014 Elsevier B.V.

Improved performance of LaNi0.6Fe0.4O3 solid oxide fuel cell cathode by application of a thin interface cathode functional layer

DEFF Research Database (Denmark)

Molin, Sebastian; Jasinski, Piotr Z.

2017-01-01

In this work, novel functional layers were prepared by a low temperature spray pyrolysis method on the oxygen side of the solid oxide cells. Thin layers of Ce0.8Gd0.2O2 and LaNi0.6Fe0.4O3 are prepared between the electrolyte and the porous oxygen electrode. Additionally the influence of the sprayed...... ceria barrier layer on the zirconia based electrolyte with the new layers is evaluated. Impedance spectroscopy results show improvement in contact between the electrolyte and the porous cathode electrode. Additionally, electrochemical performance of the cathode is improved, as evidenced by a lowered...

Interfacial Passivation of the p-Doped Hole-Transporting Layer Using General Insulating Polymers for High-Performance Inverted Perovskite Solar Cells.

Science.gov (United States)

Zhang, Fan; Song, Jun; Hu, Rui; Xiang, Yuren; He, Junjie; Hao, Yuying; Lian, Jiarong; Zhang, Bin; Zeng, Pengju; Qu, Junle

2018-05-01

Organic-inorganic lead halide perovskite solar cells (PVSCs), as a competing technology with traditional inorganic solar cells, have now realized a high power conversion efficiency (PCE) of 22.1%. In PVSCs, interfacial carrier recombination is one of the dominant energy-loss mechanisms, which also results in the simultaneous loss of potential efficiency. In this work, for planar inverted PVSCs, the carrier recombination is dominated by the dopant concentration in the p-doped hole transport layers (HTLs), since the F4-TCNQ dopant induces more charge traps and electronic transmission channels, thus leading to a decrease in open-circuit voltages (V OC ). This issue is efficiently overcome by inserting a thin insulating polymer layer (poly(methyl methacrylate) or polystyrene) as a passivation layer with an appropriate thickness, which allows for increases in the V OC without significantly sacrificing the fill factor. It is believed that the passivation layer attributes to the passivation of interfacial recombination and the suppression of current leakage at the perovskite/HTL interface. By manipulating this interfacial passivation technique, a high PCE of 20.3% is achieved without hysteresis. Consequently, this versatile interfacial passivation methodology is highly useful for further improving the performance of planar inverted PVSCs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Incorporation of layered double nanomaterials in thin film nanocomposite nanofiltration membrane for magnesium sulphate removal

Science.gov (United States)

Hanis Tajuddin, Muhammad; Yusof, Norhaniza; Salleh, Wan Norharyati Wan; Fauzi Ismail, Ahmad; Hanis Hayati Hairom, Nur; Misdan, Nurasyikin

2018-03-01

Thin film nanocomposite (TFN) membrane with copper-aluminium layered double hydroxides (LDH) incorporated into polyamide (PA) selective layer has been prepared for magnesium sulphate salt removal. 0, 0.05, 0.1, 0.15, 0.2 wt% of LDH were dispersed in the trimesoyl chloride (TMC) in n-hexane as organic solution and embedded into PA layer during interfacial polymerization with piperazine. The fabricated membranes were further characterized to evaluate its morphological structure and membrane surface hydrophilicity. The TFN membranes performance were evaluated with divalent salt magnesium sulphate (MgSO4) removal and compared with thin film composite (TFC). The morphological structures of TFN membranes were altered and the surface hydrophilicity were enhanced with addition of LDH. Incorporation of LDH has improved the permeate water flux by 82.5% compared to that of TFC membrane with satisfactory rejection of MgSO4. This study has experimentally validated the potential of LDH to improve the divalent salt separation performance for TFN membranes.

Incorporation of layered double nanomaterials in thin film nanocomposite nanofiltration membrane for magnesium sulphate removal

Directory of Open Access Journals (Sweden)

Tajuddin Muhammad Hanis

2018-01-01

Full Text Available Thin film nanocomposite (TFN membrane with copper-aluminium layered double hydroxides (LDH incorporated into polyamide (PA selective layer has been prepared for magnesium sulphate salt removal. 0, 0.05, 0.1, 0.15, 0.2 wt% of LDH were dispersed in the trimesoyl chloride (TMC in n-hexane as organic solution and embedded into PA layer during interfacial polymerization with piperazine. The fabricated membranes were further characterized to evaluate its morphological structure and membrane surface hydrophilicity. The TFN membranes performance were evaluated with divalent salt magnesium sulphate (MgSO4 removal and compared with thin film composite (TFC. The morphological structures of TFN membranes were altered and the surface hydrophilicity were enhanced with addition of LDH. Incorporation of LDH has improved the permeate water flux by 82.5% compared to that of TFC membrane with satisfactory rejection of MgSO4. This study has experimentally validated the potential of LDH to improve the divalent salt separation performance for TFN membranes.

Perovskite Thin Films via Atomic Layer Deposition

KAUST Repository

Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.

2014-01-01

© 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

Perovskite Thin Films via Atomic Layer Deposition

KAUST Repository

Sutherland, Brandon R.

2014-10-30

© 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

Science.gov (United States)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers

Directory of Open Access Journals (Sweden)

Daria Majchrowicz

2016-03-01

Full Text Available In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28 segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD. Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids.

Maglev performance of a double-layer bulk high temperature superconductor above a permanent magnet guideway

International Nuclear Information System (INIS)

Deng, Z; Wang, J; Zheng, J; Lin, Q; Zhang, Y; Wang, S

2009-01-01

In order to improve the performance of the present high temperature superconducting (HTS) maglev vehicle system, the maglev performance of single- and double-layer bulk high temperature superconductors (HTSC) was investigated above a permanent magnet guideway (PMG). It is found that the maglev performance of a double-layer bulk HTSC is not a simple addition of each layer's levitation and guidance force. Moreover, the applied magnetic field at the position of the upper layer bulk HTSC is not completely shielded by the lower layer bulk HTSC either. 53.5% of the levitation force and 27.5% of the guidance force of the upper layer bulk HTSC are excited in the double-layer bulk HTSC arrangement in the applied field-cooling condition and working gap, bringing a corresponding improvement of 16.9% and 8.8% to the conventional single-layer bulk HTSC. The present research implies that the cost performance of upper layer bulk HTSC is a little low for the whole HTS maglev system.

Maglev performance of a double-layer bulk high temperature superconductor above a permanent magnet guideway

Energy Technology Data Exchange (ETDEWEB)

Deng, Z; Wang, J; Zheng, J; Lin, Q; Zhang, Y; Wang, S [Applied Superconductivity Laboratory, Southwest Jiaotong University, Chengdu, 610031 (China)], E-mail: asclab@asclab.cn

2009-05-15

In order to improve the performance of the present high temperature superconducting (HTS) maglev vehicle system, the maglev performance of single- and double-layer bulk high temperature superconductors (HTSC) was investigated above a permanent magnet guideway (PMG). It is found that the maglev performance of a double-layer bulk HTSC is not a simple addition of each layer's levitation and guidance force. Moreover, the applied magnetic field at the position of the upper layer bulk HTSC is not completely shielded by the lower layer bulk HTSC either. 53.5% of the levitation force and 27.5% of the guidance force of the upper layer bulk HTSC are excited in the double-layer bulk HTSC arrangement in the applied field-cooling condition and working gap, bringing a corresponding improvement of 16.9% and 8.8% to the conventional single-layer bulk HTSC. The present research implies that the cost performance of upper layer bulk HTSC is a little low for the whole HTS maglev system.

Enhancement of absorption in vertically-oriented graphene sheets growing on a thin copper layer

Energy Technology Data Exchange (ETDEWEB)

Rozouvan, Tamara; Poperenko, Leonid [Taras Shevchenko National University of Kyiv, Department of Physics 4, Prospect Glushkova, Kyiv, 03187 (Ukraine); Kravets, Vasyl, E-mail: vasyl_kravets@yahoo.com [School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL (United Kingdom); Shaykevich, Igor [Taras Shevchenko National University of Kyiv, Department of Physics 4, Prospect Glushkova, Kyiv, 03187 (Ukraine)

2017-02-28

Highlights: • The optical properties and surface structure of graphene films. • Chemical vapour deposition method. • Scanning tunneling microscopy revealed vertical crystal lattice structure of graphene layer. • We report a significant enhancement of the absorption band in the vertically-oriented graphene sheets. - Abstract: The optical properties and surface structure of graphene films grown on thin copper Cu (1 μm) layer using chemical vapour deposition method were investigated via spectroscopic ellipsometry and nanoscopic measurements. Angle variable ellipsometry measurements were performed to analyze the features of dispersion of the complex refractive index and optical conductivity. It was observed significant enhancement of the absorption band in the vertically-oriented graphene sheets layer with respect to the bulk graphite due to interaction between excited localized surface plasmon at surface of thin Cu layer and graphene’s electrons. Scanning tunneling microscopy measurements with atomic spatial resolution revealed vertical crystal lattice structure of the deposited graphene layer. The obtained results provide direct evidence of the strong influence of the growing condition and morphology of nanostructure on electronic and optical behaviours of graphene film.

Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

International Nuclear Information System (INIS)

Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

2016-01-01

Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al 3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al 3+ films. The electrochromic performance of the films were evaluated by means of UV–vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni 3+ /Ni 2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni 3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film. - Graphical abstract: The ratio of Ni 3+ /Ni 2+ varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range, fast switching speed and excellent durability. Display Omitted

Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film.

Science.gov (United States)

Tsuboi, Yuka; Wang, Feijiu; Kozawa, Daichi; Funahashi, Kazuma; Mouri, Shinichiro; Miyauchi, Yuhei; Takenobu, Taishi; Matsuda, Kazunari

2015-09-14

Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

Physicochemical, thin layer and gas-liquid chromatographic ...

African Journals Online (AJOL)

DELL

2012-05-22

May 22, 2012 ... PEG (3 m × 3 mm I. D.) was used for gas chromatography. Physicochemical analysis ... subjected to thin layer chromatography on plates (20 × 20 cm) having 0.25 mm thick silica gel ..... Headspace solid- phase microextraction ...

Visible light dynamical diffraction in a 1-D photonic crystal-based interferometer with an extremely thin spacer layer

International Nuclear Information System (INIS)

Prudnikov, I.R.

2016-01-01

Properties of light diffraction in a Fabry–Pérot-like interferometer composed of two 1-D photonic crystals and a nanometer-thick spacer layer are analytically investigated. It is shown that the resonant enhancement of light wave intensity in such a layer is possible because of light dynamical diffraction from the photonic crystals of the interferometer. Numerical simulations of (i) light reflectivity and transmittance curves of the interferometer having an ultra-thin spacer layer (its thickness changes from less than 1 nm to about 10 nm) and (ii) the resonant distribution of the light wave intensity in the vicinity of the layer are performed. Based on the numerical simulations, potentialities for the determination of the structural parameters (e.g., thicknesses and refraction indexes) of ultra-thin spacer films are discussed. A difference is found to appear in resonant intensity enhancements inside the ultra-thin spacer layers between s- and p-polarized light waves.

Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering

International Nuclear Information System (INIS)

Herrero, J.; Guillen, C.

2004-01-01

The improvement of the optical and electrical characteristics of indium tin oxide (ITO) layers is pursued to achieve a higher efficiency in its application as frontal electrical contacts in thin film photovoltaic devices. In order to take advantage of the polycrystalline structure of ZnO films as growth support, the properties of ITO layers prepared at room temperature by sputtering onto bare and ZnO-coated substrates have been analyzed using X-ray diffraction, optical and electrical measurements. It has been found that by inserting a thin ZnO layer, the ITO film resistivity can be reduced as compared to that of a single ITO film with similar optical transmittance. The electrical quality improvement is related to ITO grain growth enhancement onto the polycrystalline ZnO underlayer

Layer-by-layer deposition of nanostructured CsPbBr3 perovskite thin films

Science.gov (United States)

Reshetnikova, A. A.; Matyushkin, L. B.; Andronov, A. A.; Sokolov, V. S.; Aleksandrova, O. A.; Moshnikov, V. A.

2017-11-01

Layer-by-layer deposition of nanostructured perovskites cesium lead halide thin films is described. The method of deposition is based on alternate immersion of the substrate in the precursor solutions or colloidal solution of nanocrystals and methyl acetate/lead nitrate solution using the device for deposition of films by SILAR and dip-coating techniques. An example of obtaining a photosensitive structure based on nanostructures of ZnO nanowires and layers of CsBbBr3 nanocrystals is also shown.

Facile approach to synthesize Ni(OH)2 nanoflakes on MWCNTs for high performance electrochemical supercapacitors

International Nuclear Information System (INIS)

Shahid, Muhammad; Liu Jingling; Shakir, Imran; Warsi, Muhammad Farooq; Nadeem, Muhammad; Kwon, Young-Uk

2012-01-01

Highlights: ► Deposition of ultra-thin Ni(OH) 2 nanoflakes on MWCNTs. ► Full utilization of the Ni(OH) 2 nanoflakes which provide maximum pseudocapacitance while minimizing the high surface area. ► The ultra-thin layer of Ni(OH) 2 nanoflakes on highly conductive MWCNTs is favorable for fast ion and electron transfer. ► The ultra-thin layer of Ni(OH) 2 nanoflakes on MWCNTs exhibited good cycling stability and lifetime. - Abstract: Ultrathin nanoflakes of Ni(OH) 2 were synthesized onto multi-walled carbon nanotubes (MWCNTs) by simple low cost chemically precipitation method for high performance electrochemical supercapacitor applications. The synthesized ultrathin Ni(OH) 2 exhibit high specific capacitance of 1735 Fg −1 at a scan rate of 5 mV s −1 with excellent rate capability. This high performance of Ni(OH) 2 nanoflakes was attributed to its complete accessibility to the electrolyte and maximum utilization of metal hydroxides. Findings of this work suggest that synthesized electrodes offer low-cost and scalable solution for high-performance energy storage devices.

Light scattering of thin azobenzene side-chain polyester layers

DEFF Research Database (Denmark)

Kerekes, Á.; Lörincz, E.; Ramanujam, P.S.

2002-01-01

Light scattering properties of liquid crystalline and amorphous azobenzene side-chain polyester layers used for optical data storage were examined by means of transmissive scatterometry. Comparative experiments show that the amorphous polyester has significantly lower light scattering...... characteristics than the liquid crystalline polyester. The amorphous samples have negligible polarization part orthogonal to the incident beam. the liquid crystalline samples have relative high orthogonal polarization part in light scattering, The light scattering results can be used to give a lower limit...... for the domain size in thin liquid crystalline polyester layers being responsible for the dominant light scattering. The characteristic domain Sizes obtained from the Fourier transformation of polarization microscopic Pictures confirm these values....

Sub-6 nm Thin Cross-Linked Dopamine Films with High Pressure Stability for Organic Solvent Nanofiltration

KAUST Repository

Perez Manriquez, Liliana

2016-07-11

Interfacial polymerization of dopamine and terephtaloyl chloride is performed on a porous crosslinked polyacrylonitrile support membrane. The resulting polymer layer has a smooth surface and is ultrathin (about 5 nm). The chemical nature of the interfacially polymerized layer is characterized by Fourier transform infrared spectroscopy and by X-ray photoelectron spectroscopy. The thin-film composite membrane is stable in aggressive solvents like dimethylformamide (DMF) and the membrane shows high solvent permeances combined with a molecular weight cut-off below 800 g mol-1. The remarkable stability in DMF, the ease of preparation as well as the extremely thin and smooth selective layer make this new type of bioinspired membrane attractive for solvent resistant nanofiltration. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

NARCIS (Netherlands)

Fujii, M.; Ishikawa, Y.; Ishihara, R.; Van der Cingel, J.; Mofrad, M.R.T.; Horita, M.; Uraoka, Y.

2013-01-01

In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C

Temperature stability of c-axis oriented LiNbO3/SiO2/Si thin film layered structures

International Nuclear Information System (INIS)

Tomar, Monika; Gupta, Vinay; Mansingh, Abhai; Sreenivas, K.

2001-01-01

Theoretical calculations have been performed for the temperature stability of the c-axis oriented LiNbO 3 thin film layered structures on passivated silicon (SiO 2 /Si) substrate with and without a non-piezoelectric SiO 2 overlayer. The phase velocity, electromechanical coupling coefficient and temperature coefficient of delay (TCD) have been calculated. The thicknesses of various layers have been determined for optimum SAW performance with zero TCD. The presence of a non-piezoelectric SiO 2 overlayer on LiNbO 3 film is found to significantly enhance the coupling coefficient. The optimized results reveal that a high coupling coefficient of K 2 =3.45% and a zero TCD can be obtained in the SiO 2 /LiNbO 3 /SiO 2 /Si structure with a 0.235λ thick LiNbO 3 layer sandwiched between 0.1λ thick SiO 2 layers. (author)

Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

International Nuclear Information System (INIS)

Gao, Xu; Mao, Bao-Hua; Wang, Sui-Dong; Lin, Meng-Fang; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Tsukagoshi, Kazuhito; Nabatame, Toshihide; Liu, Zhi

2017-01-01

Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O 2 /air. The device with a thick IGZO layer shows similar electron mobility in O 2 /air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O 2 /air due to the electron transfer to adsorbed gas molecules. The O 2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results. (paper)

Diblock Copolymer/Layered Silicate Nanocomposite Thin Film Stability

Science.gov (United States)

Limary, Ratchana; Green, Peter

2000-03-01

The stability of thin film symmetric diblock copolymers blended with layered silicate nanocomposites were examined using a combination of optical microscopy, atomic force microscopy (AFM), and X-ray diffraction (XRD). Two cases were examined PS-b-PMMA (polystyrene-b-polymethylacrylate) blended with montmorillonite stoichiometrically loaded with alkyl ammonium ions, OLS(S), and PS-b-PMMA blended with montmorillonite loaded with excess alkyl ammonium ions, OLS(E). XRD spectra show an increase in the gallery spacing of the OLSs, indicating that the copolymer chains have intercalated the layered silicates. AFM images reveal a distinct difference between the two nanocomposite thin films: regions in the vicinity of OLS(S) aggregates were depleted of material, while in the vicinity of OLS(E) aggregates, dewetting of the substrate occurred. We show that the stability of the copolymer/OLS nanocomposite films is determined by the enthalpic driving force associated with intercalation of the copolymer chains into the galleries of the modified OLS layers and by the substrate/organic modifier interactions.

Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

Science.gov (United States)

Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

2017-01-01

The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

Controllable growth of stable germanium dioxide ultra-thin layer by means of capacitively driven radio frequency discharge

Energy Technology Data Exchange (ETDEWEB)

Svarnas, P., E-mail: svarnas@ece.upatras.gr [High Voltage Laboratory, Department of Electrical and Computer Engineering, University of Patras, Rion 26 504, Patras (Greece); Botzakaki, M.A. [Department of Physics, University of Patras, Rion 26 504 (Greece); Skoulatakis, G.; Kennou, S.; Ladas, S. [Surface Science Laboratory, Department of Chemical Engineering, University of Patras, Rion 26 504 (Greece); Tsamis, C. [NCSR “Demokritos”, Institute of Advanced Materials, Physicochemical Processes, Nanotechnology & Microsystems, Aghia Paraskevi 15 310, Athens (Greece); Georga, S.N.; Krontiras, C.A. [Department of Physics, University of Patras, Rion 26 504 (Greece)

2016-01-29

It is well recognized that native oxide of germanium is hygroscopic and water soluble, while germanium dioxide is thermally unstable and it is converted to volatile germanium oxide at approximately 400 °C. Different techniques, implementing quite complicated plasma setups, gas mixtures and substrate heating, have been used in order to grow a stable germanium oxide. In the present work a traditional “RF diode” is used for germanium oxidation by cold plasma. Following growth, X-ray photoelectron spectroscopy demonstrates that traditional capacitively driven radio frequency discharges, using molecular oxygen as sole feedstock gas, provide the possibility of germanium dioxide layer growth in a fully reproducible and controllable manner. Post treatment ex-situ analyses on day-scale periods disclose the stability of germanium oxide at room ambient conditions, offering thus the ability to grow (ex-situ) ultra-thin high-k dielectrics on top of germanium oxide layers. Atomic force microscopy excludes any morphological modification in respect to the bare germanium surface. These results suggest a simple method for a controllable and stable germanium oxide growth, and contribute to the challenge to switch to high-k dielectrics as gate insulators for high-performance metal-oxide-semiconductor field-effect transistors and to exploit in large scale the superior properties of germanium as an alternative channel material in future technology nodes. - Highlights: • Simple one-frequency reactive ion etcher develops GeO{sub 2} thin layers controllably. • The layers remain chemically stable at ambient conditions over day-scale periods. • The layers are unaffected by the ex-situ deposition of high-k dielectrics onto them. • GeO{sub 2} oxidation and high-k deposition don't affect the Ge morphology significantly. • These conditions contribute to improved Ge-based MOS structure fabrication.

Organo-layered double hydroxides composite thin films deposited by laser techniques

Energy Technology Data Exchange (ETDEWEB)

Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest 030018 (Romania); Raditoiu, V.; Corobea, M.C. [National R.& D. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021 Bucharest (Romania)

2016-06-30

Highlights: • PLD and MAPLE was successfully used to produce organo-layered double hydroxides. • The organic anions (dodecyl sulfate-DS) were intercalated in co-precipitation step. • Zn2.5Al-LDH (Zn/Al = 2.5) and Zn2.5Al-DS thin films obtained in this work could be suitable for further applications as hydrophobic surfaces. - Abstract: We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn{sup 2+}/Al{sup 3+} ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

Development and validation of a simple high performance thin layer chromatography method combined with direct 1,1-diphenyl-2-picrylhydrazyl assay to quantify free radical scavenging activity in wine.

Science.gov (United States)

Agatonovic-Kustrin, Snezana; Morton, David W; Yusof, Ahmad P

2016-04-15

The aim of this study was to: (a) develop a simple, high performance thin layer chromatographic (HPTLC) method combined with direct 1,1-diphenyl-2-picrylhydrazyl (DPPH) assay to rapidly assess and compare free radical scavenging activity or anti-oxidant activity for major classes of polyphenolics present in wines; and (b) to investigate relationship between free radical scavenging activity to the total polyphenolic content (TPC) and total antioxidant capacity (TAC) in the wine samples. The most potent free radical scavengers that we tested for in the wine samples were found to be resveratrol (polyphenolic non-flavonoid) and rutin (flavonoid), while polyphenolic acids (caffeic acid and gallic acid) although present in all wine samples were found to be less potent free radical scavengers. Therefore, the total antioxidant capacity was mostly affected by the presence of resveratrol and rutin, while total polyphenolic content was mostly influenced by the presence of the less potent free radical scavengers gallic and caffeic acids. Copyright © 2015 Elsevier Ltd. All rights reserved.

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

Investigation of anti-wear performance of automobile lubricants using thin layer activation analysis technique

Energy Technology Data Exchange (ETDEWEB)

Biswal, Jayashree [Isotope and Radiation Application Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Thakre, G.D. [Tribology and Combustion Division, Indian Institute of Petroleum, Dehradun 248005, Uttarakhand (India); Pant, H.J., E-mail: hjpant@barc.gov.in [Isotope and Radiation Application Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Samantray, J.S. [Isotope and Radiation Application Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Arya, P.K. [Tribology and Combustion Division, Indian Institute of Petroleum, Dehradun 248005, Uttarakhand (India); Sharma, S.C.; Gupta, A.K. [Nuclear Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2017-05-15

An investigation was carried out to examine the anti-wear behavior of automobile lubricants using thin layer activation analysis technique. For this study disc gears made of EN 31 steel were labeled with a small amount of radioactivity by irradiating with 13 MeV proton beam from a particle accelerator. Experiments on wear rate measurement of the gear were carried out by mounting the irradiated disc gear on a twin-disc tribometer under lubricated condition. The activity loss was monitored by using a NaI(Tl) scintillation detector integrated with a multichannel analyzer. The relative remnant activity was correlated with thickness loss by generating a calibration curve. The wear measurements were carried out for four different types of lubricants, named as, L1, L2, L3 and L4. At lower load L1 and L4 were found to exhibit better anti-wear properties than L2 and L3, whereas, L4 exhibited the best anti-wear performance behavior than other three lubricants at all the loads and speeds investigated.

Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

KAUST Repository

Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

2015-01-01

High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

A simplified method for rapid quantification of intracellular nucleoside triphosphates by one-dimensional thin-layer chromatography

DEFF Research Database (Denmark)

Jendresen, Christian Bille; Kilstrup, Mogens; Martinussen, Jan

2011-01-01

-pyrophosphate (PRPP), and inorganic pyrophosphate (PPi) in cell extracts. The method uses one-dimensional thin-layer chromatography (TLC) and radiolabeled biological samples. Nucleotides are resolved at the level of ionic charge in an optimized acidic ammonium formate and chloride solvent, permitting...... quantification of NTPs. The method is significantly simpler and faster than both current two-dimensional methods and high-performance liquid chromatography (HPLC)-based procedures, allowing a higher throughput while common sources of inaccuracies and technical problems are avoided. For determination of PPi...

Bearing Capacity of Footings on Thin Layer of Sand on Soft Cohesive Soil

DEFF Research Database (Denmark)

Philipsen, J.; Sørensen, Carsten S.

2004-01-01

This paper contains the results of some numerical calculations performed with the aim to determine the bearing capacities of footings placed on a thin layer of sand underlain by soft cohesive soil. During the last 30-35 years different analytical and empirical calculation methods for this situation...... prepared model tests made in laboratories....

Thin-layer electrochemistry of ferrocenylbenzene derivatives: Intramolecular electronic communication

International Nuclear Information System (INIS)

Wang, Michael C.P.; Li Yunchao; Merbouh, Nabyl; Yu, Hua-Zhong

2008-01-01

Three arylferrocene derivatives, ferrocenylbenzene (MFcB), 1,3-diferrocenylbenzene (DFcB), and 1,3,5-triferrocenylbenzene (TFcB), were prepared and their redox properties systematically explored by thin-layer cyclic voltammetry (CV) and differential-pulse voltammetry (DPV). In contrast to conventional CV measurements that produced only a single pair of redox waves for all three compounds, the thin-layer technique discriminated between the multistep electron-transfer processes of DFcB and TFcB. In particular, two and three pairs of symmetric peaks were observed, respectively, when CV curves were recorded at a graphite electrode coated with a DFcB-containing and a TFcB-containing thin film of nitrobenzene and immersed in aqueous sodium perchlorate solution. These results demonstrate that the ferrocenyl moieties attached to the meta-positions of a benzene ring communicate electronically with each other, as a result of their distinct face-to-face orientations

Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

Science.gov (United States)

Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

2017-07-01

In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

Wavy channel thin film transistor architecture for area efficient, high performance and low power displays

KAUST Repository

Hanna, Amir

2013-12-23

We demonstrate a new thin film transistor (TFT) architecture that allows expansion of the device width using continuous fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.5× increase in \\'ON\\' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar \\'OFF\\' current value, ~100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers an interesting opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison and characterization of soybean and sunflower lecithins used for chocolate production by high-performance thin-layer chromatography with fluorescence detection and electrospray mass spectrometry.

Science.gov (United States)

Krüger, Stephanie; Bürmann, Laura; Morlock, Gertrud E

2015-03-25

The scarce availability of nongenetically modified soybeans on the world market represents a growing problem for food manufacturers. Hence, in this study the effects of substituting soybean with sunflower lecithin were investigated with regard to chocolate production. The glycerophospholipid pattern of the different lecithin samples was investigated by high-performance thin-layer chromatography fluorescence detection (HPTLC-FLD) and by HPTLC-positive ion electrospray ionization mass spectrometry (ESI(+)-MS) via the TLC-MS Interface and by scanning HPTLC-matrix-assisted laser desorption ionization-time-of-flight mass spectrometry (MALDI-TOFMS). Especially, the contents of phosphatidylcholine (PC) and phosphatidylethanolamine (PE) were of interest due to the influencing effects of these two glycerophospholipids on the rheological parameters of chocolate production. The lecithin substitution led to only slight differences in the rheological parameters of milk and dark chocolate. Limits of detection (LODs) and limits of quantification (LOQs) of seven glycerophospholipids were studied for three detection modes. Mean LODs ranged from 8 to 40 mg/kg for HPTLC-FLD and, using a single-quadrupole MS, from 10 to 280 mg/kg for HPTLC-ESI(+)-MS as well as from 15 to 310 mg/kg for HPTLC-FLD-ESI(+)-MS recorded after derivatization with the primuline reagent.

Vacuum-integrated electrospray deposition for highly reliable polymer thin film.

Science.gov (United States)

Park, Soohyung; Lee, Younjoo; Yi, Yeonjin

2012-10-01

Vacuum electrospray deposition (ESD) equipment was designed to prepare polymer thin films. The polymer solution can be injected directly into vacuum system through multi-stage pumping line, so that the solvent residues and ambient contaminants are highly reduced. To test the performance of ESD system, we fabricated organic photovoltaic cells (OPVCs) by injecting polymer solution directly onto the substrate inside a high vacuum chamber. The OPVC fabricated has the structure of Al∕P3HT:PCBM∕PEDOT:PSS∕ITO and was optimized by varying the speed of solution injection and concentration of the solution. The power conversion efficiency (PCE) of the optimized OPVC is 3.14% under AM 1.5G irradiation without any buffer layer at the cathode side. To test the advantages of the vacuum ESD, we exposed the device to atmosphere between the deposition steps of the active layer and cathode. This showed that the PCE of the vacuum processed device is 24% higher than that of the air exposed device and confirms the advantages of the vacuum prepared polymer film for high performance devices.

Process for forming epitaxial perovskite thin film layers using halide precursors

Science.gov (United States)

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Development of highly flexible and ultra-low permeation rate thin-film barrier structure for organic electronics

International Nuclear Information System (INIS)

Kim, Namsu; Graham, Samuel

2013-01-01

A flexible thin-film encapsulation architecture for organic electronics was built and consisted of a silicon oxide/alumina and parylene layer deposited over Ca sensors on a barrier-coated polyethylene terephthalate substrate. The film's effective water vapor transmission rate was 2.4 ± 1.5 × 10 −5 g/m 2 /day at 20 °C and 50% relative humidity. Flexural tests revealed that for films deposited on the polyethylene terephthalate substrate, the barrier layer failed due to cracking at a curvature radius of 6.4 mm, corresponding to a strain of 0.8%. Adding an epoxy top coat of suitable thickness shifted the neutral axis toward the encapsulation layer, reducing the induced strain. Barrier performance was maintained under the 6.4 mm radius of curvature in this encapsulation structure. Thus, shifting the neutral axis via device structural design is an effective method of extending the flexibility of thin-film encapsulation structure without compromising the performance loss as a barrier layer. - Highlights: • High performance barrier is fabricated on flexible substrate. • The water vapor transmission rate is 2.4 ± 1.5 × 10 −5 g/m 2 /day. • The structure maintains its performance under a small radius of bending curvature

Hierarchically structured Co₃O₄@Pt@MnO₂ nanowire arrays for high-performance supercapacitors.

Science.gov (United States)

Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

2013-10-17

Here we proposed a novel architectural design of a ternary MnO2-based electrode - a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2-based nanowire arrays for constructing next-generation supercapacitors.

Outdoor open thin-layer microalgal photobioreactor: potential productivity

Czech Academy of Sciences Publication Activity Database

Doucha, Jiří; Lívanský, Karel

2009-01-01

Roč. 21, č. 1 (2009), s. 111-117 ISSN 0921-8971 Institutional research plan: CEZ:AV0Z50200510 Keywords : productivity * photobioreactor * thin layer Subject RIV: EE - Microbiology, Virology Impact factor: 1.018, year: 2009

High-performance thin-layer chromatographic methods in the evaluation of the antioxidant and anti-hyperglycemic activity of Myrmecodia platytyrea as a promising opportunity in diabetes treatment.

Science.gov (United States)

Agatonovic-Kustrin, S; Morton, D W; Adam, A; Mizaton, H H; Zakaria, H

2017-12-29

The steady increase of diabetes is becoming a major burden on health care systems. As diabetic complications arise from oxidative stress, an antioxidant therapy along with anti-diabetic drugs is recommended. Myrmecodia or ant plant is highly valued as a traditional medicine in West Papua. It is used as an alternative treatment for diabetes, as the substances produced by ants can reduce blood sugar levels. The aim of this study was to develop and establish high-performance thin-layer chromatographic (HPTLC)-bioautographic methods to measure the antioxidant and hypoglycemic effects in different extracts from Myrmecodia platytyrea and to compare them with sterol content. Antioxidant activity in methanol, ethanol, dichloromethane (DCM) and ethyl acetate (EA) extracts were measured with a direct HPTLC-2,2-diphenyl-1-picrylhydrazyl free radical (DPPH) assay, while hypoglycemic effects were assessed using a newly developed α-amylase inhibitory activity assay. Stigmasterol is observed, after derivatization with anisaldehyde, as purple colored zones under visible light at hRF values of 0.66. The highest antioxidant activity was observed in the ethanol extract which is rich in polyphenols and flavonoids, while the DCM extract did not show antioxidant activity, but had significant α-amylase inhibitory activity. The highest α-amylase inhibitory activity was observed in the EA and DCM extracts and was related to their stigmasterol content. Crown Copyright © 2017. Published by Elsevier B.V. All rights reserved.

Measurement of the oxygen binding properties of haemocyanin with the aid of a thin-layer optical cell

Directory of Open Access Journals (Sweden)

W. J. van Aardt

1992-07-01

Full Text Available The merits of the thin-layer method of Dolman and Gill to study the oxygen binding of haemocyanin were experimentally tested with haemocyanin obtained from arthropods and molluscs. The results show that, spectrophotometrically, oxyhaemocyanin from both arthropods and molluscs has a prominent absorption peak between 335 and 345 nm. Haemocyanin is more stable in the thin- layer preparation when compared with haemoglobin. At 35 °C a decrease in the initial absorbance value of less than 2% was found after three hours. For haemoglobin the initial value decreases nearly 10% during the same period. For a high-affinity haemocyanin such as Marisa cornuarietis (P⁵⁰ = 1,07 mmHg the thin-layer method of Dolman and Gill (1978 shows better PO₂ resolution than other methods. The reason for this is that the dilution valve, which is absent in other thin-layer methods, intrinsically measures the resultant PO₂ values at very low tensions more accurately. In this study a step-by-step explanation of the technique is given. The calculations have been explained using real figures and examples. It is hoped that this detailed description will make this technique more readily available for use by respiratory physiologists.

Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

International Nuclear Information System (INIS)

Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

2010-01-01

Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

Energy Technology Data Exchange (ETDEWEB)

Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

2016-01-15

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

Optical properties and defect levels in a surface layer found on CuInSe{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Abulfotuh, F.; Wangensteen, T.; Ahrenkiel, R.; Kazmerski, L.L. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

In this paper the authors have used photoluminescence (PL) and wavelength scanning ellipsometry (WSE) to clarify the relationship among the electro-optical properties of copper indium diselenide (CIS) thin films, the type and origin of dominant defect states, and device performance. The PL study has revealed several shallow acceptor and donor levels dominating the semiconductor. PL emission from points at different depths from the surface of the CIS sample has been obtained by changing the angle of incidence of the excitation laser beam. The resulting data were used to determine the dominant defect states as a function of composition gradient at the surface of the chalcopyrite compound. The significance of this type of measurement is that it allowed the detection of a very thin layer with a larger bandgap (1.15-1.26 eV) than the CIS present on the surface of the CIS thin films. The presence of this layer has been correlated by several groups to improvement of the CIS cell performance. An important need that results from detecting this layer on the surface of the CIS semiconductor is the determination of its thickness and optical constants (n, k) as a function of wavelength. The thickness of this surface layer is about 500 {Angstrom}.

Fabrication of thin yttria-stabilized-zirconia dense electrolyte layers by inkjet printing for high performing solid oxide fuel cells

DEFF Research Database (Denmark)

Esposito, Vincenzo; Gadea, Christophe; Hjelm, Johan

2015-01-01

In this work, we present how a low-cost HP Deskjet 1000 inkjet printer was used to fabricate a 1.2 mm thin, dense and gas tight 16 cm2 solid oxide fuel cells (SOFC) electrolyte. The electrolyte was printed using an ink made of highly diluted (

Influence of Magnetron Effect on Barium Hexaferrite Thin Layers

International Nuclear Information System (INIS)

Hassane, H.; Chatelon, J.P.; Rousseau, J.J; Siblini, A.; Kriga, A.

2011-01-01

In this paper, we study the effects of a magnet, located in the cathode, on barium hexaferrite thin films deposited by RF magnetron sputtering technique. During the process, these effects can modify thickness, roughness and stress of coatings. The characteristics of the deposited layers depend on the substrate position that is located opposite of magnetron cathode. In the m agnetron area , one can observe that the high stress can produce cracks or detachment of layers and the increasing of both depositing rate and surface roughness. After sputtering elaboration, barium hexaferrite films are in a compressive stress mode. But, after the post-deposition heat treatment these films are in a tensile stress mode. To improve the quality of BaM films, the subsrtate has to be set outside the magnetron area. (author)

Thin-layer chromatography can resolve phosphotyrosine, phosphoserine, and phosphothreonine in a protein hydrolyzate

International Nuclear Information System (INIS)

Neufeld, E.; Goren, H.J.; Boland, D.

1989-01-01

A solution of propionic acid, 1 M ammonium hydroxide, and isopropyl alcohol (45/17.5/17.5, v/v) was the ascending solvent in the separation of phosphotyrosine, phosphothreonine, and phosphoserine by thin-layer chromatography. The immobile phase was cellulose. The relative migrations were 0.44, 0.38, and 0.2, respectively. A previously described thin-layer system consisting of isobutyric acid and 0.5 M ammonium hydroxide (50/30, v/v) gave very similar relative migrations. To determine the usefulness of thin-layer chromatography in phosphoamino acid analysis, the propionic acid/ammonium hydroxide/isopropyl alcohol solution was used to characterize phosphorylated residues in a plasma membrane protein which is a substrate for the insulin receptor kinase, in insulin receptor phosphorylated histone H2B, and in an in vivo phosphorylated 90000-Da protein from IM9 cells. 32 P-labeled proteins were separated by dodecyl sulfate-gel electrophoresis, digested with trypsin, and then hydrolyzed with 6 N HCl, 2 h, 110 degrees C. Following thin-layer chromatography of the hydrolyzates and autoradiography, phosphotyrosine was detected in insulin receptor substrates, and phosphoserine and phosphothreonine were found in the in vivo-phosphorylated protein. This study supports previous reports about the practicality of thin-layer chromatography in phosphoamino acid analysis and it demonstrates that a propionic acid, ammonium hydroxide, isoprophyl alcohol solution may be a useful ascending solvent mixture for this purpose

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

Science.gov (United States)

Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

2015-11-01

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

Energy Technology Data Exchange (ETDEWEB)

Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun, E-mail: lujun@mail.buct.edu.cn

2016-09-15

Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al{sup 3+} ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al{sup 3+} films. The electrochromic performance of the films were evaluated by means of UV–vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni{sup 3+}/Ni{sup 2+} also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni{sup 3+} making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film. - Graphical abstract: The ratio of Ni{sup 3+}/Ni{sup 2+} varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range, fast switching speed and excellent durability. Display Omitted.

Mathematical modelling of the thin layer solar drying of banana, mango and cassava

Energy Technology Data Exchange (ETDEWEB)

Koua, Kamenan Blaise; Fassinou, Wanignon Ferdinand; Toure, Siaka [Laboratoire d' Energie Solaire, Universite de Cocody- Abidjan, 22 BP 582 Abidjan 22 (Ivory Coast); Gbaha, Prosper [Laboratoire d' Energie Nouvelle et Renouvelable, Institut National Polytechnique, Felix HOUPHOUET - BOIGNY de Yamoussoukro (Ivory Coast)

2009-10-15

The main objectives of this paper are firstly to investigate the behaviour of the thin layer drying of plantain banana, mango and cassava experimentally in a direct solar dryer and secondly to perform mathematical modelling by using thin layer drying models encountered in literature. The variation of the moisture content of the products studied and principal drying parameters are analysed. Seven statistical models, which are empirical or semi-empirical, are tested to validate the experimental data. A non-linear regression analysis using a statistical computer program is used to evaluate the constants of the models. The Henderson and Pabis drying model is found to be the most suitable for describing the solar drying curves of plantain banana, mango and cassava. The drying data of these products have been analysed to obtain the values of the effective diffusivity during the falling drying rate phase. (author)

Fabrication and stability investigation of ultra-thin transparent and flexible Cu-Ag-Au tri-layer film on PET

Science.gov (United States)

Prakasarao, Ch Surya; D'souza, Slavia Deeksha; Hazarika, Pratim; Karthiselva N., S.; Ramesh Babu, R.; Kovendhan, M.; Kumar, R. Arockia; Joseph, D. Paul

2018-04-01

The need for transparent conducting electrodes with high transmittance, low sheet resistance and flexibility to replace Indium Tin Oxide is ever growing. We have deposited and studied the performance of ultra-thin Cu-Ag-Au tri-layer films over a flexible poly-ethylene terephthalate substrate. Scotch tape test showed good adhesion of the metallic film. Transmittance of the tri-layer was around 40 % in visible region. Optical profiler measurements were done to study the surface features. The XRD pattern revealed that film was amorphous. Sheet resistance measured by four probe technique was around 7.7 Ohm/Δ and was stable up to 423 K. The transport parameters by Hall effect showed high conductivity and carrier concentration with a mobility of 5.58 cm2/Vs. Tests performed in an indigenously designed bending unit indicated the films to be stable both mechanically and electrically even after 50,000 bending cycles.

Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Directory of Open Access Journals (Sweden)

Chao-Chun Wang

2012-01-01

Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

Thin layer activation and ultra thin layer activation: two complementary techniques for wear and corrosion studies in various fields

International Nuclear Information System (INIS)

Sauvage, T.; Vincent, L.; Blondiaux, G.

2002-01-01

Thin layer activation (TLA) is widely used since more than 25 years to study surface wear or corrosion. This well known technique uses most of the time charged particles activation, which gives sensitivity in the range of the micrometer, except when the fluid mode of detection is utilized. In this case application of the method is limited to phenomena where we have transport of radioactive fragments to detection point. The main disadvantage of this procedure is the error due to trapping phenomena between the wear or corrosion point and detection setup. So the ultra thin layer activation (UTLA) has been developed to get nanometric sensitivity without using any fluid for radioactivity transportation, which is the main source of error of the TLA technique. In this paper we shall briefly describe the TLA technique and the most important fields of application. Then we shall emphasise on UTLA with a presentation of the principle of the method and actual running of application. The main problem concerning UTLA is calibration which requires the use of thin films (usually 10 to 100 nanometers) deposited on substrate. This process is time consuming and we shall demonstrate how running software developed in the lab can solve it. We shall finish the presentation by giving some potential application of the technique in various fields. (authors)

Influence of Basalt FRP Mesh Reinforcement on High-Performance Concrete Thin Plates at High Temperatures

DEFF Research Database (Denmark)

Hulin, Thomas; Lauridsen, Dan H.; Hodicky, Kamil

2015-01-01

A basalt fiber–reinforced polymer (BFRP) mesh was introduced as reinforcement in high-performance concrete (HPC) thin plates (20–30 mm) for implementation in precast sandwich panels. An experimental program studied the BFRP mesh influence on HPC exposed to high temperature. A set of standard...... furnace tests compared performances of HPC with and without BFRP mesh, assessing material behavior; another set including polypropylene (PP) fibers to avoid spalling compared the performance of BFRP mesh reinforcement to that of regular steel reinforcement, assessing mechanical properties......, requiring the use of steel. Microscope observations highlighted degradation of the HPC-BFRP mesh interface with temperature due to the melting polymer matrix of the mesh. These observations call for caution when using fiber-reinforced polymer (FRP) reinforcement in elements exposed to fire hazard....

The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

International Nuclear Information System (INIS)

Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

2013-01-01

The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings

Science.gov (United States)

Kats, Mikhail A.; Byrnes, Steven J.; Blanchard, Romain; Kolle, Mathias; Genevet, Patrice; Aizenberg, Joanna; Capasso, Federico

2013-09-01

Recently a new class of optical interference coatings was introduced which comprises ultra-thin, highly absorbing dielectric layers on metal substrates. We show that these lossy coatings can be augmented by an additional transparent subwavelength layer. We fabricated a sample comprising a gold substrate, an ultra-thin film of germanium with a thickness gradient, and several alumina films. The experimental reflectivity spectra showed that the additional alumina layer increases the color range that can be obtained, in agreement with calculations. More generally, this transparent layer can be used to enhance optical absorption, protect against erosion, or as a transparent electrode for optoelectronic devices.

Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

Science.gov (United States)

Tari, Alireza; Wong, William S.

2018-02-01

Dual-dielectric SiOx/SiNx thin-film layers were used as back-channel and gate-dielectric barrier layers for bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs). The concentration profiles of hydrogen, indium, gallium, and zinc oxide were analyzed using secondary-ion mass spectroscopy characterization. By implementing an effective H-diffusion barrier, the hydrogen concentration and the creation of H-induced oxygen deficiency (H-Vo complex) defects during the processing of passivated flexible IGZO TFTs were minimized. A bilayer back-channel passivation layer, consisting of electron-beam deposited SiOx on plasma-enhanced chemical vapor-deposition (PECVD) SiNx films, effectively protected the TFT active region from plasma damage and minimized changes in the chemical composition of the semiconductor layer. A dual-dielectric PECVD SiOx/PECVD SiNx gate-dielectric, using SiOx as a barrier layer, also effectively prevented out-diffusion of hydrogen atoms from the PECVD SiNx-gate dielectric to the IGZO channel layer during the device fabrication.

Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

Science.gov (United States)

Li, Zhi-Yue; Yang, Hao-Zhi; Chen, Sheng-Chi; Lu, Ying-Bo; Xin, Yan-Qing; Yang, Tian-Lin; Sun, Hui

2018-05-01

Nitrogen-doped indium tin zinc oxide (ITZO:N) thin film transistors (TFTs) were deposited on SiO2 (200 nm)/p-Si〈1 0 0〉 substrates by RF magnetron sputtering at room temperature. The structural, chemical compositions, surface morphology, optical and electrical properties as a function of the active layer thickness were investigated. As the active layer thickness increases, Zn content decreases and In content increases gradually. Meanwhile, Sn content is almost unchanged. When the thickness of the active layer is more than 45 nm, the ITZO:N films become crystallized and present a crystal orientation along InN(0 0 2) plan. No matter what the thickness is, ITZO:N films always display a high transmittance above 80% in the visible region. Their optical band gaps fluctuate between 3.4 eV and 3.62 eV. Due to the dominance of low interface trap density and high carrier concentration, ITZO:N TFT shows enhanced electrical properties as the active layer thickness is 35 nm. Its field-effect mobility, on/off radio and sub-threshold swing are 17.53 cm2 V‑1 · s‑1, 106 and 0.36 V/dec, respectively. These results indicate that the suitable thickness of the active layer can enhance the quality of ITZO:N films and decrease the defects density of ITZO:N TFT. Thus, the properties of ITZO:N TFT can be optimized by adjusting the thickness of the active layer.

Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

International Nuclear Information System (INIS)

Zhang, Yijun; Liu, Ming; Ren, Wei; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang

2015-01-01

One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe 3 O 4 thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe 3 O 4 thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H 2 /Ar at 400 °C, the as-grown α−Fe 2 O 3 sample is reduced to Fe 3 O 4 phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications

A simplified computing method of pile group to seismic loads using thin layer element

International Nuclear Information System (INIS)

Masao, T.; Hama, I.

1995-01-01

In the calculation of pile group, it is said that the results of response by thin layer method give the correct solution with the isotropic and homogeneous soil material in each layer, on the other hand this procedure spends huge computing time. Dynamic stiffness matrix of thin layer method is obtained from inversion of flexibility matrix between pile-i and pile-j. This flexibility matrix is full matrix and its size increase in proportion to the number of piles and thin layers. The greater part of run time is taken into the inversion of flexibility matrix against point loading. We propose the method of decreasing the run time for computing by reducing to banded matrix of flexibility matrix. (author)

High-performance polyamide thin-film-nanocomposite reverse osmosis membranes containing hydrophobic zeolitic imidazolate framework-8

KAUST Repository

Duan, Jintang; Pan, Yichang; Pacheco Oreamuno, Federico; Litwiller, Eric; Lai, Zhiping; Pinnau, Ingo

2015-01-01

A hydrophobic, hydrothermally stable metal-organic framework (MOF) - zeolitic imidazolate framework-8 (ZIF-8) was successfully incorporated into the selective polyamide (PA) layer of thin-film nanocomposite (TFN) membranes for water desalination

Electroluminescence of organic light-emitting diodes with an ultra-thin layer of dopant

Energy Technology Data Exchange (ETDEWEB)

Li Weizhi [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Yu Junsheng [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jsyu@uestc.edu.cn; Wang, Tao [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Jiang, Yadong [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jiangyd@uestc.edu.cn; Wei, Bangxiong [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2008-03-15

Conventional fluorescent dyes, i.e., 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), 5,12-dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA) and 5,6,11,12-tetraphenylnaphthacene (Rubrene), were used to investigate the performance of organic light-emitting diodes (OLEDs) based on indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/tris-(8-hydroxyquinolate)-aluminum (Alq{sub 3})/MgAg. The dyes were either inserted into devices as an ultra-thin film at the NPB/Alq{sub 3} interface by sequential evaporation, or doped into the Alq{sub 3} emission layer by co-evaporation with the doping ratio about 2%. Electroluminescence (EL) spectra of devices indicated that concentration quenching effect (CQE) of the dye-dopant was slightly bigger in the former than in the latter, while the degrees of CQE for three dopants are in the order of DMQA > DCJTB > Rubrene suggested by the difference in EL spectra and performances of devices. In addition, EL process of device with an ultra-thin layer of dopant is dominated by direct carrier trapping (DCT) process due to almost no holes recombine with electrons in Alq{sub 3}-host layer.

Interdiffusion studies on high-Tc superconducting YBa2Cu3O7-δ thin films on Si(111) with a NiSi2/ZrO2 buffer layer

DEFF Research Database (Denmark)

Aarnink, W.A.M.; Blank, D.H.A.; Adelerhof, D.J.

1991-01-01

Interdiffusion studies on high-T(c) superconducting YBa2Cu3O7-delta thin films with thickness in the range of 2000-3000 angstrom, on a Si(111) substrate with a buffer layer have been performed. The buffer layer consists of a 400 angstrom thick epitaxial NiSi2 layer covered with 1200 angstrom...... of polycrystalline ZrO2. YBa2Cu3O7-delta films were prepared using laser ablation. The YBa2Cu3O7-delta films on the Si/NiSi2/ZrO2 substrates are of good quality; their critical temperatures T(c,zero) and T(c,onset) have typical values of 85 and 89 K, respectively. The critical current density j(c) at 77 K equaled 4...... x 10(4) A/cm2. With X-ray analysis (XRD), only c-axis orientation has been observed. The interdiffusion studies, using Rutherford backscattering spectrometry (RBS) and scanning Auger microscopy (SAM) show that the ZrO2 buffer layer prevents severe Si diffusion to the YBa2Cu3O7-delta layer, the Si...

Auger electron spectroscopy study on interaction between aluminum thin layers and uranium substrate

International Nuclear Information System (INIS)

Zhou Wei; Liu Kezhao; Yang Jiangrong; Xiao Hong; Jiang Chunli; Lu Lei

2005-01-01

Aluminum thin layers on uranium were prepared by sputter deposition at room temperature in ultra high vacuum analysis chamber. Interaction between U and Al, and growth mode were investigated by Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS). It is shown that Al thin film growth follows the volmer-weber (VW) mode. At room temperature, Al and U interact with each other, resulting in interdiffusion action and formation of U-Al alloys at U/Al interface. Annealing promotes interaction and interdiffusion between U and Al, and UAl x maybe formed at interface. (authors)

Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

Science.gov (United States)

Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

2018-03-01

Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

Thin-layer chromatography - liquid chromatography, an ideal supplement demonstrated by the separation of lanthanoids

International Nuclear Information System (INIS)

Specker, H.; Hufnagel, A.

1984-01-01

All lanthanoids have been separated by thin-layer chromatography (TLC) with short retention times by using a mixture of ether/tetrahydrofurane (THF)/bis-(2-ethylhexyl)-phosphate (HDEHP)/nitric acid. The eluent was empirically tested by synergistic effects. The results have been transferred to high-performance liquid chromatography /HPLC). It was possible to use the same eluent in TLC and HPLC both for the analytical separation of all lanthanoids and for the separation of fission products. The experimental experience gained in HPLC could be applied to the pre-concentration of isotopes in TLC. Both methods excellently supplemented each other in the separation of lanthanoids. (orig.) [de

Performance of High Layer Thickness in Selective Laser Melting of Ti6Al4V

Directory of Open Access Journals (Sweden)

Xuezhi Shi

2016-12-01

Full Text Available To increase building rate and save cost, the selective laser melting (SLM of Ti6Al4V with a high layer thickness (200 μm and low cost coarse powders (53 μm–106 μm at a laser power of 400 W is investigated in this preliminary study. A relatively large laser beam with a diameter of 200 μm is utilized to produce a stable melt pool at high layer thickness, and the appropriate scanning track, which has a smooth surface with a shallow contact angle, can be obtained at the scanning speeds from 40 mm/s to 80 mm/s. By adjusting the hatch spacings, the density of multi-layer samples can be up to 99.99%, which is much higher than that achieved in previous studies about high layer thickness selective laser melting. Meanwhile, the building rate can be up to 7.2 mm3/s, which is about 2 times–9 times that of the commercial equipment. Besides, two kinds of defects are observed: the large un-melted defects and the small spherical micropores. The formation of the un-melted defects is mainly attributed to the inappropriate overlap rates and the unstable scanning tracks, which can be eliminated by adjusting the processing parameters. Nevertheless, the micropores cannot be completely eliminated. It is worth noting that the high layer thickness plays a key role on surface roughness rather than tensile properties during the SLM process. Although a sample with a relatively coarse surface is generated, the average values of yield strength, ultimate tensile strength, and elongation are 1050 MPa, 1140 MPa, and 7.03%, respectively, which are not obviously different than those with the thin layer thickness used in previous research; this is due to the similar metallurgical bonding and microstructure.

Performance of High Layer Thickness in Selective Laser Melting of Ti6Al4V.

Science.gov (United States)

Shi, Xuezhi; Ma, Shuyuan; Liu, Changmeng; Chen, Cheng; Wu, Qianru; Chen, Xianping; Lu, Jiping

2016-12-01

To increase building rate and save cost, the selective laser melting (SLM) of Ti6Al4V with a high layer thickness (200 μm) and low cost coarse powders (53 μm-106 μm) at a laser power of 400 W is investigated in this preliminary study. A relatively large laser beam with a diameter of 200 μm is utilized to produce a stable melt pool at high layer thickness, and the appropriate scanning track, which has a smooth surface with a shallow contact angle, can be obtained at the scanning speeds from 40 mm/s to 80 mm/s. By adjusting the hatch spacings, the density of multi-layer samples can be up to 99.99%, which is much higher than that achieved in previous studies about high layer thickness selective laser melting. Meanwhile, the building rate can be up to 7.2 mm³/s, which is about 2 times-9 times that of the commercial equipment. Besides, two kinds of defects are observed: the large un-melted defects and the small spherical micropores. The formation of the un-melted defects is mainly attributed to the inappropriate overlap rates and the unstable scanning tracks, which can be eliminated by adjusting the processing parameters. Nevertheless, the micropores cannot be completely eliminated. It is worth noting that the high layer thickness plays a key role on surface roughness rather than tensile properties during the SLM process. Although a sample with a relatively coarse surface is generated, the average values of yield strength, ultimate tensile strength, and elongation are 1050 MPa, 1140 MPa, and 7.03%, respectively, which are not obviously different than those with the thin layer thickness used in previous research; this is due to the similar metallurgical bonding and microstructure.

Ceramic-supported thin PVA pervaporation membranes combining high flux and high selectivity : contradicting the flux-selectivity paradigm

NARCIS (Netherlands)

Peters, T.A.; Poeth, C.H.S.; Benes, N.E.; Buijs, H.C.W.M.; Vercauteren, F.F.; Keurentjes, J.T.F.

2006-01-01

Thin, high-flux and highly selective cross-linked poly(vinyl)alcohol waterselective layers have been prepared on top of hollow fibre ceramic supports. The supports consist of an alpha-Al2O3 hollow fibre substrate and an intermediate gamma-Al2O3 layer, which provides a sufficiently smooth surface for

Underpotential deposition-mediated layer-by-layer growth of thin films

Science.gov (United States)

Wang, Jia Xu; Adzic, Radoslav R.

2015-05-19

A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

Solvent-induced crystallization for hybrid perovskite thin-film photodetector with high-performance and low working voltage

International Nuclear Information System (INIS)

Hu, Wei; Yang, Shuzhen; Fan, Peng; Pan, Anlian; Wu, Runsheng; Yang, Junliang

2017-01-01

Organometal trihalide perovskites have emerged as a class of solution-processed semiconductors exhibiting remarkable optoelectronic properties. Using a high-quality perovskite thin film prepared by solvent-induced crystallization method and adopting a novel device configuration based on photon recycling effect, a perovskite thin-film photodetector has been constructed with the highest external quantum efficiency of 4.1  ×  10 4 % and responsivity of 219 A W −1 at a low bias of 1 V so far. The device working mechanism was further disclosed based on energy band bending model. The high-performance and low working-voltage perovskite thin-film photodetector will find potential applications in photodetection and optoelectronic integrated circuits. (paper)

High performance EUV multilayer structures insensitive to capping layer optical parameters.

Science.gov (United States)

Pelizzo, Maria Guglielmina; Suman, Michele; Monaco, Gianni; Nicolosi, Piergiorgio; Windt, David L

2008-09-15

We have designed and tested a-periodic multilayer structures containing protective capping layers in order to obtain improved stability with respect to any possible changes of the capping layer optical properties (due to oxidation and contamination, for example)-while simultaneously maximizing the EUV reflection efficiency for specific applications, and in particular for EUV lithography. Such coatings may be particularly useful in EUV lithographic apparatus, because they provide both high integrated photon flux and higher stability to the harsh operating environment, which can affect seriously the performance of the multilayer-coated projector system optics. In this work, an evolutive algorithm has been developed in order to design these a-periodic structures, which have been proven to have also the property of stable performance with respect to random layer thickness errors that might occur during coating deposition. Prototypes have been fabricated, and tested with EUV and X-ray reflectometry, and secondary electron spectroscopy. The experimental results clearly show improved performance of our new a-periodic coatings design compared with standard periodic multilayer structures.

Sorption and movement of pesticides on thin layer plates of Brazilain soils

International Nuclear Information System (INIS)

Lord, K.A.; Helene, C.G.; Andrea, M.M. de; Ruegg, E.F.

1979-01-01

The sorption from aqueous solution, and movement in water on thin layers plates of 7 soils of 3 organochlorine, 2 organophosphorus and 1 carbamate insecticide was determined in the laboratory. Generally, all substances were sorbed most and moved least on soils richest in organic matter. However, sorption was not a function of organic matter content alone. Aldrin and DDT were most strongly sorbed and did not move from the point of application on the thin layer plates of any soil. On all 7 soils, carbaryl was the least strongly sorbed insecticide. On 5 soils, lindane, parathion and malathion were increasingly strongly sorbed, but on the other 2 soils lindane was mostly strongly sorbed. The apparent greater mobility of 14 C-labelled malathion on thin layers of soils repeatedly leached could be explained by the formation of more polar substances. (author) [pt

High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

Energy Technology Data Exchange (ETDEWEB)

Jurkovic, M.J.; Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.

2000-07-01

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm{sup 2}/Vs with carrier sheet densities of 6.1 x 10{sup 12} cm{sup {minus}2}, and 5.8 x 10{sup 12} cm{sup {minus}2} at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Thin-layer chromatography of radioactively labelled cholesterol and precursors from biological material

International Nuclear Information System (INIS)

Pill, J.; Aufenanger, J.; Stegmeier, K.; Schmidt, F.H.; Mueller, D.; Boehringer Mannheim G.m.b.H.

1987-01-01

The investigation methods of the action of xenobiotics on sterol biosynthesis from 14 C-acetate in rat hepatocyte cultures can be developed, with regard to extraction using Extrelut and the separation of the sterol pattern by thin-layer chromatography, in such a way that they are suitable for wider application, e.g., screening. Good visualisation and recognition of changes in the sterol pattern are possible using autoradiography of the thin-layer chromatogram. (orig.)

Electroresistance Effect in Gold Thin Film Induced by Ionic-Liquid-Gated Electric Double Layer

NARCIS (Netherlands)

Nakayama, Hiroyasu; Ye, Jianting; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Iwasa, Yoshihiro; Saitoh, Eiji

Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with

Nonequilibrium temperatures and second-sound propagation along nanowires and thin layers

International Nuclear Information System (INIS)

Jou, D.; Cimmelli, V.A.; Sellitto, A.

2009-01-01

It is shown that the dispersion relation of heat waves along nanowires or thin layers could allow to compare two different definitions of nonequilibrium temperature, since thermal waves are predicted to propagate with different phase speed depending on the definition of nonequilibrium temperature being used. The difference is small, but it could be in principle measurable in nanosystems, as for instance nanowires and thin layers, in a given frequency range. Such an experiment could provide a deeper view on the problem of the definition of temperature in nonequilibrium situations.

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

Energy Technology Data Exchange (ETDEWEB)

Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2015-08-15

The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

Therapeutic drug monitoring of nevirapine in saliva in Uganda using high performance liquid chromatography and a low cost thin-layer chromatography technique.

Science.gov (United States)

Lamorde, Mohammed; Fillekes, Quirine; Sigaloff, Kim; Kityo, Cissy; Buzibye, Allan; Kayiwa, Joshua; Merry, Concepta; Nakatudde-Katumba, Lillian; Burger, David; de Wit, Tobias F Rinke

2014-09-01

In resource limited settings access to laboratory monitoring of HIV treatment is limited and therapeutic drug monitoring is generally unavailable. This study aimed to evaluate nevirapine concentrations in saliva using low-cost thin-layer chromatography (TLC) and nevirapine concentrations in plasma and saliva using high performance liquid chromatography (HPLC) methods; and to correlate nevirapine plasma concentrations to HIV treatment outcomes in Ugandan patients. Paired plasma and stimulated saliva samples were obtained from Ugandan, HIV-infected adults on nevirapine-based ART. Nevirapine concentrations were measured using a validated HPLC method and a novel TLC method. Plasma nevirapine concentrations HPLC were considered subtherapeutic. Negative/positive predictive values of different thresholds for subtherapeutic nevirapine concentrations in saliva were determined. Virologic testing and, if applicable, HIV drug resistance testing was performed. Median (interquartile range, IQR) age of 297 patients was 39.1 (32.8-45.2) years. Three hundred saliva and 287 plasma samples were available for analysis. Attempts failed to determine nevirapine saliva concentrations by TLC. Using HPLC, median (IQR) nevirapine concentrations in saliva and plasma were 3.40 (2.59-4.47) mg/L and 6.17 (4.79-7.96) mg/L, respectively. The mean (coefficient of variation,%) nevirapine saliva/plasma ratio was 0.58 (62%). A cut-off value of 1.60 mg/L nevirapine in saliva was associated with a negative/positive predictive value of 0.99/0.72 and a sensitivity/specificity of 87%/98% for predicting subtherapeutic nevirapine plasma concentrations, respectively. Only 5% (15/287) of patients had subtherapeutic nevirapine plasma concentrations, of which 3 patients had viral load results > 400 copies/mL. Patients with nevirapine concentrations in plasma 400 copies/mL). The low-cost TLC technique for monitoring nevirapine in saliva was unsuccessful but monitoring nevirapine saliva and plasma

Robotic thin layer chromatography instrument for synthetic chemistry

International Nuclear Information System (INIS)

Corkan, L.A.; Haynes, E.; Kline, S.; Lindsey, J.S.

1991-01-01

We have constructed a second generation instrument for performing automated thin layer chromatography (TLC), The TLC instrument Consists of four dedicated stations for (1) plate dispensing, (2) sample application, (3) plate development, and (4) densitometry. A robot is used to move TLC plates among stations. The TLC instrument functions either as a stand-alone unit or as one analytical module in a robotic workstation for synthetic chemistry. An integrated hardware and software architecture enables automatic TLC analysis of samples produced concurrently from synthetic reactions in progress on the workstation. The combination of fixed automation and robotics gives a throughput of 12 TLC samples per hour. From these results a blueprint has emerged for an advanced automated TLC instrument with far greater throughput and analytical capabilities

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

2017-08-15

Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Evaluation of a thin-layer chromatographic technique for ...

African Journals Online (AJOL)

Methanol extracts of both fistula and bush samples were prepared and analysed by thin-layer chromatography. Chromatoplates, when visualised under ultraviolet light, revealed a number of fluorescent compounds, some of which were common in both the fistula and bush sample extracts. By comparing the presence of ...

Thin Cell Layer technology in ornamental plant micropropagation ...

African Journals Online (AJOL)

Thin cell layer (TCL) technology originated almost 30 years ago with the controlled development of flowers, roots, shoots and somatic embryos on tobacco pedicel longitudinal TCLs. Since then TCLs have been successfully used in the micropropagation of many ornamental plant species whose previous in vitro ...

Deposition of yttrium oxysulfide thin films by atomic layer epitaxy

International Nuclear Information System (INIS)

Kukli, K.; University of Tartu, Tartu,; Johansson, L-S.; Nykaenen, E.; Peussa, M.; Ninistoe, L.

1998-01-01

Full text: Yttrium oxysulfide is a highly interesting material for optoelectronic applications. It is industrially exploited in the form of doped powder in catholuminescent phosphors, e.g. Y 2 O 2 S: Eu 3+ for colour TV. Attempts to grow thin films of Y 2 O 2 S have not been frequent and only partially successful due to the difficulties in obtaining crystalline films at a reasonable temperature. Furthermore, sputtering easily leads to a sulphur deficiency. Evaporation of the elements from a multi-source offers a better control of the stoichiometry resulting in hexagonal (0002) oriented films at 580 deg C. In this paper we present the first successful thin film growth experiments using a chemical process with molecular precursors. Atomic layer epitaxy (ALE) allows the use of a relatively low deposition temperature and thus compatibility with other technologies. Already at 425 deg C the reaction between H 2 S and Y(thd) 3 (thd = 2,2,6,6 - tetramethyl-heptane-3,5- dione) yields a crystalline Y 2 O 2 S thin film which was characterized by XRD, XRF and XPS

Influence of Electrode Design and Contacting Layers on Performance of Electrolyte Supported SOFC/SOEC Single Cells

Directory of Open Access Journals (Sweden)

Mihails Kusnezoff

2016-11-01

Full Text Available The solid oxide cell is a basis for highly efficient and reversible electrochemical energy conversion. A single cell based on a planar electrolyte substrate as support (ESC is often utilized for SOFC/SOEC stack manufacturing and fulfills necessary requirements for application in small, medium and large scale fuel cell and electrolysis systems. Thickness of the electrolyte substrate, and its ionic conductivity limits the power density of the ESC. To improve the performance of this cell type in SOFC/SOEC mode, alternative fuel electrodes, on the basis of Ni/CGO as well as electrolytes with reduced thickness, have been applied. Furthermore, different interlayers on the air side have been tested to avoid the electrode delamination and to reduce the cell degradation in electrolysis mode. Finally, the influence of the contacting layer on cell performance, especially for cells with an ultrathin electrolyte and thin electrode layers, has been investigated. It has been found that Ni/CGO outperform traditional Ni/8YSZ electrodes and the introduction of a ScSZ interlayer substantially reduces the degradation rate of ESC in electrolysis mode. Furthermore, it was demonstrated that, for thin electrodes, the application of contacting layers with good conductivity and adhesion to current collectors improves performance significantly.

Influence of Electrode Design and Contacting Layers on Performance of Electrolyte Supported SOFC/SOEC Single Cells.

Science.gov (United States)

Kusnezoff, Mihails; Trofimenko, Nikolai; Müller, Martin; Michaelis, Alexander

2016-11-08

The solid oxide cell is a basis for highly efficient and reversible electrochemical energy conversion. A single cell based on a planar electrolyte substrate as support (ESC) is often utilized for SOFC/SOEC stack manufacturing and fulfills necessary requirements for application in small, medium and large scale fuel cell and electrolysis systems. Thickness of the electrolyte substrate, and its ionic conductivity limits the power density of the ESC. To improve the performance of this cell type in SOFC/SOEC mode, alternative fuel electrodes, on the basis of Ni/CGO as well as electrolytes with reduced thickness, have been applied. Furthermore, different interlayers on the air side have been tested to avoid the electrode delamination and to reduce the cell degradation in electrolysis mode. Finally, the influence of the contacting layer on cell performance, especially for cells with an ultrathin electrolyte and thin electrode layers, has been investigated. It has been found that Ni/CGO outperform traditional Ni/8YSZ electrodes and the introduction of a ScSZ interlayer substantially reduces the degradation rate of ESC in electrolysis mode. Furthermore, it was demonstrated that, for thin electrodes, the application of contacting layers with good conductivity and adhesion to current collectors improves performance significantly.

Anti-inflammatory activity and qualitative analysis of different extracts of Maytenus obscura (A. Rich.) Cuf. by high performance thin layer chromatography method

Institute of Scientific and Technical Information of China (English)

Mohamed F. Alajmi; Perwez Alam

2014-01-01

Objective: To perform aqueous ethanol soluble fraction (AESF) and dichloromethane extract of aerial parts of Maytenus obscura (A. Rich.) Cuf. using high performance thin layer chromatography (HPTLC) and to test anti-inflammatory activity of these extracts.Methods:HPTLC studies were carried out using CAMAG HPTLC system equipped with Linomat IV applicator, TLC scanner 3, Reprostar 3, CAMAG ADC 2 and WIN CATS-4 software were used. The anti-inflammatory activity was tested by injecting different groups of rats (6 each) with formalin in hind paw and measuring the edema volume before and 1 h later formalin injection. Control group received saline i.p. The extracts treatment was injected i.p. in doses of 100 and 200 mg/kg 1 h before formalin administration. Indomethacin (30 mg/kg) was used as standard.Results:The results of preliminary phytochemical studies confirmed the presence of protein, lipid, carbohydrate, phenol, flavonoid, saponin, triterpenoid, alkaloid and anthraquinone in both extracts. Chromatography was performed on glass-backed silica gel 60 F254 HPTLC plates with the green solvents toluene: ethyacetate: glacial acetic acid (5:3:0.2, v/v/v) as mobile phase. HPTLC finger printing of AESF revealed major eight peaks with Rf values in the range of 0.28 to 0.80 and the dichloromethane revealed major 11 peaks with Rf values in the range of 0.12 to 0.76. The purity of sample was confirmed by comparing the absorption spectra at start, middle and end position of the band. Treatment of rats (i.p.) with AESF and dichloromethane in doses of 100 and 200 mg/kg inhibited singnificantly (P<0.05, n=6) formalin-induced inflammation by 50%, 55.9%, 45.5%, and 51.4%, respectively.Conclusions:HPTLC finger printing of AESF and dichloromethane of Maytenus obscura revealed eight major spots for alcoholic extracts and nine major spots for dichloromethane extracts. These HPTLC profiles may be of great usefulness in the quality control of herbal products containing these extracts. The

Temperature stability of c-axis oriented LiNbO{sub 3}/SiO{sub 2}/Si thin film layered structures

Energy Technology Data Exchange (ETDEWEB)

Tomar, Monika [Department of Physics and Astrophysics, University of Delhi, Delhi (India)]. E-mail: mtomar@physics.du.ac.in; monikatomar@rediffmail.com; Gupta, Vinay; Mansingh, Abhai; Sreenivas, K. [Department of Physics and Astrophysics, University of Delhi, Delhi (India)

2001-08-07

Theoretical calculations have been performed for the temperature stability of the c-axis oriented LiNbO{sub 3} thin film layered structures on passivated silicon (SiO{sub 2}/Si) substrate with and without a non-piezoelectric SiO{sub 2} overlayer. The phase velocity, electromechanical coupling coefficient and temperature coefficient of delay (TCD) have been calculated. The thicknesses of various layers have been determined for optimum SAW performance with zero TCD. The presence of a non-piezoelectric SiO{sub 2} overlayer on LiNbO{sub 3} film is found to significantly enhance the coupling coefficient. The optimized results reveal that a high coupling coefficient of K{sup 2}=3.45% and a zero TCD can be obtained in the SiO{sub 2}/LiNbO{sub 3}/SiO{sub 2}/Si structure with a 0.235{lambda} thick LiNbO{sub 3} layer sandwiched between 0.1{lambda} thick SiO{sub 2} layers. (author)

Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer.

Science.gov (United States)

Cai, Wensi; Ma, Xiaochen; Zhang, Jiawei; Song, Aimin

2017-04-20

Electric-double-layer (EDL) thin-film transistors (TFTs) have attracted much attention due to their low operation voltages. Recently, EDL TFTs gated with radio frequency (RF) magnetron sputtered SiO₂ have been developed which is compatible to large-area electronics fabrication. In this work, fully transparent Indium-Gallium-Zinc-Oxide-based EDL TFTs on glass substrates have been fabricated at room temperature for the first time. A maximum transmittance of about 80% has been achieved in the visible light range. The transparent TFTs show a low operation voltage of 1.5 V due to the large EDL capacitance (0.3 µF/cm² at 20 Hz). The devices exhibit a good performance with a low subthreshold swing of 130 mV/dec and a high on-off ratio > 10⁵. Several tests have also been done to investigate the influences of light irradiation and bias stress. Our results suggest that such transistors might have potential applications in battery-powered transparent electron devices.

High mobility transparent conducting oxides for thin film solar cells

International Nuclear Information System (INIS)

Calnan, S.; Tiwari, A.N.

2010-01-01

A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

High power density thin film SOFCs with YSZ/GDC bilayer electrolyte

International Nuclear Information System (INIS)

Cho, Sungmee; Kim, YoungNam; Kim, Jung-Hyun; Manthiram, Arumugam; Wang Haiyan

2011-01-01

Graphical abstract: . A: Cross-sectional TEM images show a GDC single layer and YSZ/GDC bilayer electrolyte structures. As clearly observed from TEM images, the YSZ interlayer thickness varies from ∼330 nm to ∼1 μm. B: The cell with the bilayer electrolyte (YSZ ∼330 nm) doubles the overall power output at 750 deg. C compared to that achieved in the GDC single layer cell. Display Omitted Highlights: → YSZ/ GDC bilayer thin film electrolytes were deposited by a pulsed laser deposition (PLD) technique. → Thin YSZ film as a blocking layer effectively suppresses the cell voltage drop without reducing the ionic conductivity of the electrolyte layer. → The YSZ/ GDC bilayer structure presents a feasible architecture for enhancing the overall power density and enabling chemical, mechanical, and structural stability in the cells. - Abstract: Bilayer electrolytes composed of a gadolinium-doped CeO 2 (GDC) layer (∼6 μm thickness) and an yttria-stabilized ZrO 2 (YSZ) layer with various thicknesses (∼330 nm, ∼440 nm, and ∼1 μm) were deposited by a pulsed laser deposition (PLD) technique for thin film solid oxide fuel cells (TFSOFCs). The bilayer electrolytes were prepared between a NiO-YSZ (60:40 wt.% with 7.5 wt.% carbon) anode and La 0.5 Sr 0.5 CoO 3 -Ce 0.9 Gd 0.1 O 1.95 (50:50 wt.%) composite cathode for anode-supported single cells. Significantly enhanced maximum power density was achieved, i.e., a maximum power density of 188, 430, and 587 mW cm -2 was measured in a bilayer electrolyte single cell with ∼330 nm thin YSZ at 650, 700, and 750 deg. C, respectively. The cell with the bilayer electrolyte (YSZ ∼330 nm) doubles the overall power output at 750 deg. C compared to that achieved in the GDC single layer cell. This signifies that the YSZ thin film serves as a blocking layer for preventing electrical current leakage in the GDC layer and also provides chemical, mechanical, and structural integrity in the cell, which leads to the overall enhanced

Radiation hardness of thin Low Gain Avalanche Detectors

Science.gov (United States)

Kramberger, G.; Carulla, M.; Cavallaro, E.; Cindro, V.; Flores, D.; Galloway, Z.; Grinstein, S.; Hidalgo, S.; Fadeyev, V.; Lange, J.; Mandić, I.; Medin, G.; Merlos, A.; McKinney-Martinez, F.; Mikuž, M.; Quirion, D.; Pellegrini, G.; Petek, M.; Sadrozinski, H. F.-W.; Seiden, A.; Zavrtanik, M.

2018-05-01

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 μm). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5 ṡ 1015 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (∼300 μm) and offer larger charge collection with respect to detectors without gain layer for fluences gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

Low-temperature atomic layer deposition of MgO thin films on Si

International Nuclear Information System (INIS)

Vangelista, S; Mantovan, R; Lamperti, A; Tallarida, G; Kutrzeba-Kotowska, B; Spiga, S; Fanciulli, M

2013-01-01

Magnesium oxide (MgO) films have been grown by atomic layer deposition in the wide deposition temperature window of 80–350 °C by using bis(cyclopentadienyl)magnesium and H 2 O precursors. MgO thin films are deposited on both HF-last Si(1 0 0) and SiO 2 /Si substrates at a constant growth rate of ∼0.12 nm cycle −1 . The structural, morphological and chemical properties of the synthesized MgO thin films are investigated by x-ray reflectivity, grazing incidence x-ray diffraction, time-of-flight secondary ion mass spectrometry and atomic force microscopy measurements. MgO layers are characterized by sharp interface with the substrate and limited surface roughness, besides good chemical uniformity and polycrystalline structure for thickness above 7 nm. C–V measurements performed on Al/MgO/Si MOS capacitors, with MgO in the 4.6–11 nm thickness range, allow determining a dielectric constant (κ) ∼ 11. Co layers are grown by chemical vapour deposition in direct contact with MgO without vacuum-break (base pressure 10 −5 –10 −6  Pa). The as-grown Co/MgO stacks show sharp interfaces and no elements interdiffusion among layers. C–V and I–V measurements have been conducted on Co/MgO/Si MOS capacitors. The dielectric properties of MgO are not influenced by the further process of Co deposition. (paper)

Search for Rayleigh-Taylor instability in laser irradiated layered thin foil targets

International Nuclear Information System (INIS)

Kilkenny, J.D.; Hares, J.D.; Rumsby, P.T.

1980-01-01

An experiment to measure the Rayleigh-Taylor instability at the vacuum-ablation surface of laser irradiated layered targets by time resolved x-ray spectroscopy is described. The time taken to burn through a layer of material is measured to be the same for massive targets as for thin foil accelerating targets. It is inferred that the thin foil targets might be Rayleigh-Taylor stable despite the values of γtauapproximately equal to15 calculated from classical theory. (author)

Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2.

Science.gov (United States)

Zhou, Lin; Xu, Kai; Zubair, Ahmad; Liao, Albert D; Fang, Wenjing; Ouyang, Fangping; Lee, Yi-Hsien; Ueno, Keiji; Saito, Riichiro; Palacios, Tomás; Kong, Jing; Dresselhaus, Mildred S

2015-09-23

The controlled synthesis of large-area, atomically thin molybdenum ditelluride (MoTe2) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, we developed a chemical vapor deposition synthesis to produce large-area, uniform, and highly crystalline few-layer 2H and 1T' MoTe2 films. It was found that these two different phases of MoTe2 can be grown depending on the choice of Mo precursor. Because of the highly crystalline structure, the as-grown few-layer 2H MoTe2 films display electronic properties that are comparable to those of mechanically exfoliated MoTe2 flakes. Our growth method paves the way for the large-scale application of MoTe2 in high-performance nanoelectronics and optoelectronics.

Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer

CERN Document Server

Senyukov, Serhiy; Besson, Auguste; Claus, Gilles; Cousin, Loic; Dorokhov, Andrei; Dulinski, Wojciech; Goffe, Mathieu; Hu-Guo, Christine; Winter, Marc

2013-01-01

The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 um thin CMOS Pixel Sensors (CPS) covering either the 3 innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 um CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJa...

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

International Nuclear Information System (INIS)

Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

2015-01-01

Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

The production of ultra-thin layers of ion-exchange resin and metallic silver by electrospraying

International Nuclear Information System (INIS)

Wyllie, H.A.

1988-10-01

Highly efficient radioactive sources for use in radioisotope metrology have been prepared on ultra-thin layers of electrosprayed ion-exchange resin. The efficiency of these sources can be reduced for the purpose of radioactivity standardisation by coating them with conducting silver layers which are also produced by electrospraying. A description is given of improvements to the electrospraying methods, together with details of the rotating, oscillating source-mount turntable

Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

Science.gov (United States)

Yoon, Myung-Han

Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

The offline combination of thin-layer chromatography and high-performance liquid chromatography with diode array detection and micrOTOF-Q mass spectrometry for the separation and identification of spinochromes from sea urchin (Strongylocentrotus droebachiensis) shells.

Science.gov (United States)

Shikov, Alexander N; Ossipov, Vladimir I; Martiskainen, Olli; Pozharitskaya, Olga N; Ivanova, Svetlana A; Makarov, Valery G

2011-12-16

Thin-layer chromatography (TLC) with off-line high-performance liquid chromatography coupled to diode array detection and micrOTOF-Q mass spectrometry (HPLC-DAD-MS) resulted in the successful fractionation, separation and identification of spinochrome pigments from sea urchin (Strongylocentrotus droebachiensis) shells. Two fractions of pigments were separated by TLC and eluted with methanol using a TLC-MS interface. HPLC-DAD-MS analysis of the fractions indicated the presence of six sea urchin pigments: spinochrome monomers B and D, three spinochrome dimers (anhydroethylidene-6,6'-bis(2,3,7-trihydroxynaphthazarin) and its isomer and ethylidene-6,6'-bis(2,3,7-trihydroxynaphthazarin)), and one pigment that was preliminary identified as a spinochrome dimer with the structural formula C(22)H(16)O(16). Copyright © 2011 Elsevier B.V. All rights reserved.

Marker based standardization of polyherbal formulation (SJT-DI-02 by high performance thin layer chromatography method

Directory of Open Access Journals (Sweden)

Bhakti J Ladva

2014-01-01

purity of the bands due to marker compounds in the sample extracts were confirmed by overlaying the absorption spectra recorded at start, middle and end position of the band in the sample tracks. After conforming all these things fingerprints were developed for all three formulations which will be act as authentification and quality control tool. Results: % w/w of asarones is 3.61, % w/w of marmelosin is 4.60, % w/w of gallic acid is 10.80 and % w/w of lupeol is 4.13.The method was validated in terms of linearity, precision, repeatability, limit of detection, limit of quantification and accuracy. In well-developed mobile phase system linearity was found to be in the range of 0.983-0.995, % recovery was found to be in the range of 97.48-99.63, % RSD for intraday and interday was found to be 0.13- 0.70 and 0.32 -1.41 and LOD and LOQ was found to be in the range of 0.15- 0.61 and 0.45 -1.83 microgram per ml. Conclusion: Thus High performance thin layer chromatography (HPTLC methods were developed and validated in terms of linearity, precision, repeatability, limit of detection, limit of quantification and accuracy. The methods were rapid, sensitive, reproducible and economical. It does not suffer any positive or negative interference due to common other component present in the formulation and would also serve as a tool for authentication of herbal products containing marmelosin, gallic acid, lupeol and asarones. Thus this work provides standardized and therapeutically active polyherbal formulations for the different ailments.

Few-Layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate.

Science.gov (United States)

Lee, Hee Sung; Shin, Jae Min; Jeon, Pyo Jin; Lee, Junyeong; Kim, Jin Sung; Hwang, Hyun Chul; Park, Eunyoung; Yoon, Woojin; Ju, Sang-Yong; Im, Seongil

2015-05-13

Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with a decent voltage gain of ≈12, a few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this hybrid CMOS inverter operates as a light-detecting pixel as well, using a thin MoS2 channel. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultra-thin, single-layer polarization rotator

Directory of Open Access Journals (Sweden)

T. V. Son

2016-08-01

Full Text Available We demonstrate light polarization control over a broad spectral range by a uniform layer of vanadium dioxide as it undergoes a phase transition from insulator to metal. Changes in refractive indices create unequal phase shifts on s- and p-polarization components of incident light, and rotation of linear polarization shows intensity modulation by a factor of 103 when transmitted through polarizers. This makes possible polarization rotation devices as thin as 50 nm that would be activated thermally, optically or electrically.

TiO2 nanofiber solid-state dye sensitized solar cells with thin TiO2 hole blocking layer prepared by atomic layer deposition

International Nuclear Information System (INIS)

Li, Jinwei; Chen, Xi; Xu, Weihe; Nam, Chang-Yong; Shi, Yong

2013-01-01

We incorporated a thin but structurally dense TiO 2 layer prepared by atomic layer deposition (ALD) as an efficient hole blocking layer in the TiO 2 nanofiber based solid-state dye sensitized solar cell (ss-DSSC). The nanofiber ss-DSSCs having ALD TiO 2 layers displayed increased open circuit voltage, short circuit current density, and power conversion efficiency compared to control devices with blocking layers prepared by spin-coating liquid TiO 2 precursor. We attribute the improved photovoltaic device performance to the structural integrity of ALD-coated TiO 2 layer and consequently enhanced hole blocking effect that results in reduced dark leakage current and increased charge carrier lifetime. - Highlights: • TiO 2 blocking locking layer prepared by atomic layer deposition (ALD) method. • ALD-coated TiO 2 layer enhanced hole blocking effect. • ALD blocking layer improved the voltage, current and efficiency. • ALD blocking layer reduced dark leakage current and increased electron lifetime

Thin Layer Drying Kinetics of Pineapple: Effect of Blanching ...

African Journals Online (AJOL)

Four thin-layer drying models were fitted to the experimental drying data. The .... MATLAB software package (version 6.5). The correlation ... to evaluate the goodness of fit of the simulation ... during the oven-drying process of pineapple slices.

Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

International Nuclear Information System (INIS)

Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

2014-01-01

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

High-performance metal mesh/graphene hybrid films using prime-location and metal-doped graphene.

Science.gov (United States)

Min, Jung-Hong; Jeong, Woo-Lim; Kwak, Hoe-Min; Lee, Dong-Seon

2017-08-31

We introduce high-performance metal mesh/graphene hybrid transparent conductive layers (TCLs) using prime-location and metal-doped graphene in near-ultraviolet light-emitting diodes (NUV LEDs). Despite the transparency and sheet resistance values being similar for hybrid TCLs, there were huge differences in the NUV LEDs' electrical and optical properties depending on the location of the graphene layer. We achieved better physical stability and current spreading when the graphene layer was located beneath the metal mesh, in direct contact with the p-GaN layer. We further improved the contact properties by adding a very thin Au mesh between the thick Ag mesh and the graphene layer to produce a dual-layered metal mesh. The Au mesh effectively doped the graphene layer to create a p-type electrode. Using Raman spectra, work function variations, and the transfer length method (TLM), we verified the effect of doping the graphene layer after depositing a very thin metal layer on the graphene layers. From our results, we suggest that the nature of the contact is an important criterion for improving the electrical and optical performance of hybrid TCLs, and the method of doping graphene layers provides new opportunities for solving contact issues in other semiconductor devices.

On-line monitoring of wear and/or corrosion processes by thin layer activation technique

International Nuclear Information System (INIS)

Alexandreanu, B.; Popa-Simil, L.; Voiculescu, D.; Racolta, P.M.

1995-01-01

The Thin Layer Activation (TLA) principle consists in creating a radioactive layer by ion beam irradiation of a machine part subjected to wear. The method is based on the determination of the increasing radioactivity in the lubricant due to suspended wear particles and has a sensitivity threshold of about 40 μ g / cm 2 . The most used radioactive markers are 56 Co, 57 Co, 65 Zn, 51 Cr, 48 V, 124 Sb. In this paper, we have chosen to present an on-line wear level determination experiment performed for a thermal engine. The study of possible influence of a SR3 added lubricant upon the wear level of a Dacia 1410 car engine is presented, illustrating the on-line TLA based monitoring of wear for industrial uses. The examples presented outline the advantages of this method over the conventional one, like the fast response and the high sensitivity, while no dismantling of the engine is implied. (author)

Deposition of thin layer (monoatomic layer) of barium on gold single crystal surfaces and studies of its oxidation employing X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Ahmad, H.; Ahmad, R.; Khalid, M.; Alvi, R.A.

2007-01-01

Due to the high reactivity of barium with oxygen, some oxygen diffuse into the bulk to form bulk oxide and it is very difficult to differentiate the oxide over layer and the bulk oxide. To study the oxidation of barium surface layer, a thin layer (monolayer) of barium is developed over gold single crystal surface. Gold is selected as support because it is one of the least reactive metal in transition metal group and have very low probability of reaction with oxygen at room temperature (300K). Nitrous oxide (N/sub 2/O) was used as oxidant. Thin layer of barium was deposited on Au(100) surface. The barium coverage on gold surface was calculated that varied from 0.4 to 1.4 monolayer (ML). Photoelectron spectra for O(ls), N(ls), Ba (3d), and Au (4f) have been recorded on X-ray photoelectron spectrometer at different binding energy region specific for each element. The decomposition of nitrous oxide has been observed in all cases. It has found that nitrogen is evolved in the gaseous state and oxygen is adsorbed/chemisorbed on barium over layer. (author)

Advanced properties of Al-doped ZnO films with a seed layer approach for industrial thin film photovoltaic application

International Nuclear Information System (INIS)

Dewald, Wilma; Sittinger, Volker; Szyszka, Bernd; Säuberlich, Frank; Stannowski, Bernd; Köhl, Dominik; Ries, Patrick; Wuttig, Matthias

2013-01-01

Currently sputtered Al-doped ZnO films are transferred to industry for the application in thin film silicon solar modules. These films are known to easily form light trapping structures upon etching which are necessary for absorbers with low absorbance such as μc-Si. Up to now the best structures for high efficiency thin film silicon solar cells were obtained by low rate radio frequency (r.f.) sputtering of ceramic targets. However, for industrial application a high rate process is essential. Therefore a seed layer approach was developed to increase the deposition rate while keeping the desired etch morphology and electrical properties. Aluminum doped ZnO films were deposited dynamically by direct current (d.c.) magnetron sputtering from a ceramic ZnO:Al 2 O 3 target (1 wt.%) onto an additional seed layer prepared by r.f. sputtering. ZnO:Al films were investigated with respect to their optical and electrical properties as well as the morphology created after etching for a-Si/μc-Si solar cells. Additionally atomic force microscopy, scanning electron microscopy, X-ray diffraction and Hall measurements were performed, comparing purely r.f. or d.c. sputtered films with d.c. sputtered films on seed layers. With the seed layer approach it was possible to deposit ZnO:Al films with a visual transmittance of 83.5%, resistivity of 295 μΩ cm, electron mobility of 48.9 cm 2 /Vs and electron density of 4.3 · 10 20 cm −3 from a ceramic target at 330 °C. Etch morphologies with 1 μm lateral structure size were achieved. - Highlights: ► Seed layer approach for dynamic sputter deposition of enhanced quality ZnO:Al. ► A thin radio frequency sputtered ZnO:Al layer assists film nucleation on glass. ► Electron mobility was increased up to 49 cm 2 /Vs due to quasi-epitaxial film growth. ► Etch morphology exhibits 1 μm wide craters for light trapping in solar cells. ► The concept was transferred to a seed layer sputtered with direct current

Advanced properties of Al-doped ZnO films with a seed layer approach for industrial thin film photovoltaic application

Energy Technology Data Exchange (ETDEWEB)

Dewald, Wilma, E-mail: wilma.dewald@ist.fraunhofer.de [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54E, 38108 Braunschweig (Germany); Sittinger, Volker; Szyszka, Bernd [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54E, 38108 Braunschweig (Germany); Säuberlich, Frank; Stannowski, Bernd [Sontor GmbH, OT Thalheim, Sonnenallee 7-11, 06766 Bitterfeld-Wolfen (Germany); Köhl, Dominik; Ries, Patrick; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, Sommerfeldstraße 14, 52074 Aachen (Germany)

2013-05-01

Currently sputtered Al-doped ZnO films are transferred to industry for the application in thin film silicon solar modules. These films are known to easily form light trapping structures upon etching which are necessary for absorbers with low absorbance such as μc-Si. Up to now the best structures for high efficiency thin film silicon solar cells were obtained by low rate radio frequency (r.f.) sputtering of ceramic targets. However, for industrial application a high rate process is essential. Therefore a seed layer approach was developed to increase the deposition rate while keeping the desired etch morphology and electrical properties. Aluminum doped ZnO films were deposited dynamically by direct current (d.c.) magnetron sputtering from a ceramic ZnO:Al{sub 2}O{sub 3} target (1 wt.%) onto an additional seed layer prepared by r.f. sputtering. ZnO:Al films were investigated with respect to their optical and electrical properties as well as the morphology created after etching for a-Si/μc-Si solar cells. Additionally atomic force microscopy, scanning electron microscopy, X-ray diffraction and Hall measurements were performed, comparing purely r.f. or d.c. sputtered films with d.c. sputtered films on seed layers. With the seed layer approach it was possible to deposit ZnO:Al films with a visual transmittance of 83.5%, resistivity of 295 μΩ cm, electron mobility of 48.9 cm{sup 2}/Vs and electron density of 4.3 · 10{sup 20} cm{sup −3} from a ceramic target at 330 °C. Etch morphologies with 1 μm lateral structure size were achieved. - Highlights: ► Seed layer approach for dynamic sputter deposition of enhanced quality ZnO:Al. ► A thin radio frequency sputtered ZnO:Al layer assists film nucleation on glass. ► Electron mobility was increased up to 49 cm{sup 2}/Vs due to quasi-epitaxial film growth. ► Etch morphology exhibits 1 μm wide craters for light trapping in solar cells. ► The concept was transferred to a seed layer sputtered with direct current.

Investigation of Thin Layered Cobalt Oxide Nano-Islands on Gold

Science.gov (United States)

Bajdich, Michal; Walton, Alex S.; Fester, Jakob; Arman, Mohammad A.; Osiecki, Jacek; Knudsen, Jan; Vojvodic, Aleksandra; Lauritsen, Jeppe V.

2015-03-01

Layered cobalt oxides have been shown to be highly active catalysts for the oxygen evolution reaction (OER), but the synergistic effect of contact with gold is yet to be fully understood. The synthesis of three distinct types of thin-layered cobalt oxide nano-islands supported on a single crystal gold (111) substrate is confirmed by combination of STM and XAS methods. In this work, we present DFT+U theoretical investigation of above nano-islands using several previously known structural models. Our calculations confirm stability of two low-oxygen pressure phases: (a) rock-salt Co-O bilayer and (b) wurtzite Co-O quadlayer and single high-oxygen pressure phase: (c) O-Co-O trilayer. The optimized geometries agree with STM structures and calculated oxidation states confirm the conversion from Co2+ to Co3+ found experimentally in XAS. The O-Co-O trilayer islands have the structure of a single layer of CoOOH proposed to be the true active phase for OER catalyst. For that reason, the effect of water on the Pourbaix stabilities of basal planes and edge sites is fully investigated. Lastly, we also present the corresponding OER theoretical overpotentials.

Sol–gel derived scattering layers as substrates for thin-film photovoltaic cells

Energy Technology Data Exchange (ETDEWEB)

Hegmann, Jan [Lehrstuhl für Chemische Technologie der Materialsynthese, Universität Würzburg, Röntgenring 11, 97070 Würzburg (Germany); Mandl, Magdalena [Fraunhofer-Institut für Silicatforschung, Neunerplatz 2, 97082 Würzburg (Germany); Löbmann, Peer, E-mail: peer.loebmann@isc.fraunhofer.de [Fraunhofer-Institut für Silicatforschung, Neunerplatz 2, 97082 Würzburg (Germany)

2014-08-01

Agglomerated silica particles were coated on glass by dip-coating; the resulting films exhibited optical scattering. With constant optical transmittances > 80% their haze could be modified by the withdrawal rate applied for the respective deposition procedure. Film thickness, surface topography and coverage of the substrate were characterized by Scanning Electron Microscopy and Atomic Force Microscopy. For the use in radiation management in thin-film silicon solar cells in a first step the scattering layers were coated with aluminum-doped zinc oxide by sputtering; the optical performance of the resulting bilayer was characterized by haze measurements and angle resolved scattering spectroscopy. Quantum efficiencies of complete solar cells could be determined after the deposition of a hydrogenated amorphous Si/hydrogenated microcrystalline Si tandem absorber and application of metallic back contacts. It turned out that the external quantum efficiency of the resulting cells is not directly related to the light scattering performance of the scattering layer used. - Highlights: • Characterization of sol–gel scattering layers • Combination of different coating-technologies to prepare stacks with optical functionality • Comprehensive material preparation and characterization for complex multilayer.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Science.gov (United States)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-05-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Science.gov (United States)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-02-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

Loading Effects on Resolution in Thin Layer Chromatography and ...

Indian Academy of Sciences (India)

Home; Journals; Resonance – Journal of Science Education; Volume 10; Issue 11. Loading Effects on Resolution in Thin Layer Chromatography and Paper Chromatography. K Girigowda V H Mulimani. Classroom Volume 10 Issue 11 November 2005 pp 79-84 ...

High-performance thin-layer chromatography (HPTLC)

National Research Council Canada - National Science Library

Srivastava, ManMohan

2011-01-01

... on HPTLC fundamentals: principle, theory, understanding; instrumentation: implementation, optimization, validation, automation and qualitative and quantitative analysis; applications: phytochemical analysis, biomedical analysis, herbal drug quantification, analytical analysis, finger print analysis and potential for hyphenation: HPTLC future to combinat...

Solvent effects of a dimethyldicyanoquinonediimine buffer layer as N-type material on the performance of organic photovoltaic cells.

Science.gov (United States)

Yang, Eui Yeol; Oh, Se Young

2014-08-01

In the present work, we have fabricated organic photovoltaic cells consisting of ITO/PEDOT:PSS/P3HT:PCBM/DMDCNQI/Al using a dip-coating method with various solvent systems. We have investigated solvent effects (such as solubility, viscosity and vapor pressure) in deposition of a thin DMDCNQI buffer layer on the performance of organic photovoltaic cells. The solvent system which had low viscosity and good solubility properties, made a dense and uniform DMDCNQI ultra thin film, resulting in a high performance device. In particular, a prepared organic photovoltaic cell was fabricated using a cosolvent system (methanol:methylenechloride = 3:1) and showed a maximum power conversion efficiency of 4.53%.

Wear resistant PTFE thin film enabled by a polydopamine adhesive layer

International Nuclear Information System (INIS)

Beckford, Samuel; Zou, Min

2014-01-01

The influence of a polydopamine (PDA) adhesive layer on the friction and wear resistance of polytetrafluoroethylene (PTFE) thin films coated on stainless steel was investigated. The friction and wear tests were carried out using a ball on flat configuration under a normal load of 50 g, sliding speed of 2.5 mm/s, and stroke length of 15 mm. It is found that the PDA/PTFE film is able to withstand approximately 500 times more rubbing cycles than the PTFE film alone. X-ray photoelectron spectroscopy (XPS) results show that a tenacious layer of PTFE remains adhered to the PDA layer, which enables the durability of the PDA/PTFE film. Because of the relatively low thickness of the film, PDA/PTFE shows great potential for use in applications where durable, thin films are desirable

Ultrafast atomic layer-by-layer oxygen vacancy-exchange diffusion in double-perovskite LnBaCo2O5.5+δ thin films.

Science.gov (United States)

Bao, Shanyong; Ma, Chunrui; Chen, Garry; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Zhang, Yamei; Bettis, Jerry L; Whangbo, Myung-Hwan; Dong, Chuang; Zhang, Qingyu

2014-04-22

Surface exchange and oxygen vacancy diffusion dynamics were studied in double-perovskites LnBaCo2O5.5+δ (LnBCO) single-crystalline thin films (Ln = Er, Pr; -0.5 atoms in the LnBCO thin films is taking the layer by layer oxygen-vacancy-exchange mechanism. The first principles density functional theory calculations indicate that hydrogen atoms are present in LnBCO as bound to oxygen forming O-H bonds. This unprecedented oscillation phenomenon provides the first direct experimental evidence of the layer by layer oxygen vacancy exchange diffusion mechanism.

Ultrahigh PEMFC performance of a thin-film, dual-electrode assembly with tailored electrode morphology.

Science.gov (United States)

Jung, Chi-Young; Kim, Tae-Hyun; Yi, Sung-Chul

2014-02-01

A dual-electrode membrane electrode assembly (MEA) for proton exchange membrane fuel cells with enhanced polarization under zero relative humidity (RH) is fabricated by introducing a phase-separated morphology in an agglomerated catalyst layer of Pt/C (platinum on carbon black) and Nafion. In the catalyst layer, a sufficient level of phase separation is achieved by dispersing the Pt catalyst and the Nafion dispersion in a mixed-solvent system (propane-1,2,3-triol/1-methyl-2-pyrrolidinone).The high polymer chain mobility results in improved water uptake and regular pore-size distribution with small pore diameters. The electrochemical performance of the dual-film electrode assembly with different levels of phase separation is compared to conventional electrode assemblies. As a result, good performance at 0 % RH is obtained because self-humidification is dramatically improved by attaching this dense and phase-separated catalytic overlayer onto the conventional catalyst layer. A MEA prepared using the thin-film, dual-layered electrode exhibits 39-fold increased RH stability and 28-fold improved start-up recovery time during the on-off operation relative to the conventional device. We demonstrate the successful operation of the dual-layered electrode comprised of discriminatively phase-separated agglomerates with an ultrahigh zero RH fuel-cell performance reaching over 95 % performance of a fully humidified MEA. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly Oriented Growth of Piezoelectric Thin Films on Silicon Using Two-Dimensional Nanosheets as Growth Template Layer.

Science.gov (United States)

Nguyen, Minh D; Yuan, Huiyu; Houwman, Evert P; Dekkers, Matthijn; Koster, Gertjan; Ten Elshof, Johan E; Rijnders, Guus

2016-11-16

Ca 2 Nb 3 O 10 (CNOns) and Ti 0.87 O 2 (TiOns) metal oxide nanosheets (ns) are used as a buffer layer for epitaxial growth of piezoelectric capacitor stacks on Si and Pt/Ti/SiO 2 /Si (Pt/Si) substrates. Highly (001)- and (110)-oriented Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) films are achieved by utilizing CNOns and TiOns, respectively. The piezoelectric capacitors are characterized by polarization and piezoelectric hysteresis loops and by fatigue measurements. The devices fabricated with SrRuO 3 top and bottom electrodes directly on nanosheets/Si have ferroelectric and piezoelectric properties well comparable with devices that use more conventional oxide buffer layers (stacks) such as YSZ, CeO 2 /YSZ, or SrTiO 3 on Si. The devices grown on nanosheets/Pt/Si with Pt top electrodes show significantly improved polarization fatigue properties over those of similar devices grown directly on Pt/Si. The differences in properties are ascribed to differences in the crystalline structures and the density of the films. These results show a route toward the fabrication of single crystal piezoelectric thin films and devices with high quality, long-lifetime piezoelectric capacitor structures on nonperovskite and even noncrystalline substrates such as glass or polished metal surfaces.

High performance, transparent a-IGZO TFTs on a flexible thin glass substrate

International Nuclear Information System (INIS)

Lee, Gwang Jun; Jang, Jae Eun; Kim, Joonwoo; Kim, Jung-Hye; Jeong, Soon Moon; Jeong, Jaewook

2014-01-01

We investigated electrical properties of transparent amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with amorphous indium zinc oxide (a-IZO) transparent electrodes on a flexble thin glass substrate. The TFTs show a high field-effect mobility, a good subthreshold slope and a high on/off ratio owing to the high temperature thermal annealing process which cannot be applied to typical transparent polymer-based flexible substrates. Bias stress instability tests applying tensile stress concurrently with the bending radius of up to 40 mm indicated that mechanically and electrically stable a-IGZO TFTs can be fabricated on the transparent thin glass substrate. (paper)

Use of a wedge cuvette in thin layer photometry and its application to oximetry

NARCIS (Netherlands)

Spaan, J. A.; Garred, L. J.; van de Borne, P.

1977-01-01

A wedge cuvette was constructed by fixing 2 glass plates at a known angle with a spacer at one end. This resulted in a thin layer with thickness varying from 0 to 250 micrometer. By measuring the intensity of a beam of light through the thin layer as a function of distance along the wedge (and thus