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Sample records for high mobility inas

  1. Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

    Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T; Song, A M

    2009-01-01

    In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

  2. Terahertz tunable detection in self-switching diodes based on high mobility semiconductors: InGaAs, InAs and InSb

    Iniguez-de-la-Torre, I; Rodilla, H; Mateos, J; Pardo, D; Gonzalez, T [Departamento de Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain); Song, A M, E-mail: indy@usal.e [School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD (United Kingdom)

    2009-11-15

    In this work we report on the use of high mobility materials in the channel of self-switching diodes as potential candidates for terahertz operation. By means of Monte Carlo simulations we envisage the feasibility of tuneable-by-geometry detection in the terahertz range. The low effective mass of InAs and InSb in relation to InGaAs enhances ballistic transport inside the diode, thus improving the amplitude and quality factor of the resonance found in the detection spectra of self-switching diodes. The frequency of the resonant peak is also increased with the use of these narrow band gap semiconductors. The analysis of the noise spectra provides useful information about the origin of the resonance. By decreasing temperature below 300 K, a clear improvement in detection sensitivity is also achieved.

  3. High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice

    Chen, C.; Holmes, S. N.; Farrer, I.; Beere, H. E.; Ritchie, D. A.

    2018-03-01

    InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2 V-1 s-1 at ambient temperature, show an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm-1 that dominates the polar-optical mode scattering from  ˜70 K to 300 K. The measured optical phonon frequency is insensitive to the carrier density modulated with a surface gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity scattering starts to dominate for temperatures  <100 K. In the high mobility In0.75Ga0.25As quantum well, GaAs-like phonons do not couple to the electron gas unlike the case of In0.53Ga0.47As quantum wells.

  4. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F.

    2014-01-01

    This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

  5. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-11-07

    This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

  6. Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.

    Jewett, Scott A; Ivanisevic, Albena

    2012-09-18

    In a variety of applications where the electronic and optical characteristics of traditional, siliconbased materials are inadequate, recently researchers have employed semiconductors made from combinations of group III and V elements such as InAs. InAs has a narrow band gap and very high electron mobility in the near-surface region, which makes it an attractive material for high performance transistors, optical applications, and chemical sensing. However, silicon-based materials remain the top semiconductors of choice for biological applications, in part because of their relatively low toxicity. In contrast to silicon, InAs forms an unstable oxide layer under ambient conditions, which can corrode over time and leach toxic indium and arsenic components. To make InAs more attractive for biological applications, researchers have investigated passivation, chemical and electronic stabilization, of the surface by adlayer adsorption. Because of the simplicity, low cost, and flexibility in the type of passivating molecule used, many researchers are currently exploring wet-chemical methods of passivation. This Account summarizes much of the recent work on the chemical passivation of InAs with a particular focus on the chemical stability of the surface and prevention of oxide regrowth. We review the various methods of surface preparation and discuss how crystal orientation affects the chemical properties of the surface. The correct etching of InAs is critical as researchers prepare the surface for subsequent adlayer adsorption. HCl etchants combined with a postetch annealing step allow the tuning of the chemical properties in the near-surface region to either arsenic- or indium-rich environments. Bromine etchants create indium-rich surfaces and do not require annealing after etching; however, bromine etchants are harsh and potentially destructive to the surface. The simultaneous use of NH(4)OH etchants with passivating molecules prevents contact with ambient air that can

  7. Surface roughness induced electron mobility degradation in InAs nanowires

    Wang Fengyun; Yip, Sen Po; Han, Ning; Fok, KitWa; Lin, Hao; Hou, Jared J; Dong, Guofa; Hung, Tak Fu; Chan, K S; Ho, Johnny C

    2013-01-01

    In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15 000 cm 2 V −1 s −1 when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance. (paper)

  8. High tunability and superluminescence in InAs mid-infrared light emitting diodes

    Sherstnev, V.V.; Krier, A.; Hill, G.

    2002-01-01

    We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

  9. Electrical characterization of InAs thin films

    Botha, L.; Shamba, P.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2008-07-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10{sup 18} cm{sup -3}) to strongly p-doped (p{proportional_to}10{sup 19} cm{sup -3}) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Electrical characterization of InAs thin films

    Botha, L.; Shamba, P.; Botha, J.R.

    2008-01-01

    It is known that parallel conduction as a result of surface and /or interface charge accumulation significantly shields the bulk electrical properties of InAs thin films when characterized using Hall measurements. This parallel conduction in InAs can be modeled by using the two-layer model of Nedoluha and Koch [Zeitschrift fuer Physik 132, 608 (1952)]; where an InAs epilayer is treated as consisting of two conductors connected in parallel viz. a bulk and a surface layer. Here, this two-layer model is used to simulate Hall coefficient and conductivity data of InAs thin films ranging from strongly n-doped (n=10 18 cm -3 ) to strongly p-doped (p∝10 19 cm -3 ) material. Conventional Hall approximations, i.e. those that assume uniform conduction from a single band, are then used to predict the apparent carrier concentration and mobility that will be determined from conventional Hall measurements, with the aim of illustrating the error of such a simplified analysis of InAs Hall data. Results show that, in addition to ignoring parallel conduction, the approximations of conventional Hall data analysis have a further inadequacy for p-type InAs, in that the high electron to hole mobility ratio in InAs is not taken into account. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Spin Injection, Manipulation, and Detection, in InAs Nanodevices

    Jones, G. M.; Jonker, B. T.; Bennett, B. R.; Meyer, J. R.; Twigg, M. E.; Reinecke, T. L.; Park, D.; Pereverzev, S. V.; Badescu, C. S.; Li, C. H.; Hanbicki, A. T.; van'terve, O.; Vurgaftman, I.

    2008-03-01

    In this talk the authors will discuss their progress using InAs heterostructures to produce spin-polarized injection and detection, as well as manipulation of coherent spin-polarized electrons for a spin-based FET (SpinFET). High-quality n-type InAs heterostructures demonstrate many favorable characteristics necessary to the study of spin dynamics, including 2DEG's with small effective mass (m* = 0.023) and large g-factor (g = -15). Previously, high-mobility InAs heterostructures have been demonstrated in which electrons pass ballistically over hundreds of nanometers up to room temperature. Our devices seek to exploit the strong Spin-Orbit effect present in InAs to manipulate coherent spin-polarized electrons during transport, by producing perpendicular electric field using isolated top-gates fabricated over the electron transport region.

  12. Growth and electrical characterization of Zn-doped InAs and InAs1-xSbx

    Venter, A.; Shamba, P.; Botha, L.; Botha, J.R.

    2009-01-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs 1-x Sb x layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs 1-x Sb x epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  13. Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field

    Vigneau, Florian; Zeng, Zaiping; Escoffier, Walter; Caroff, Philippe; Leturcq, Renaud; Niquet, Yann-Michel; Raquet, Bertrand; Goiran, Michel

    2018-03-01

    The magnetoconductance of a long channel InAs nanowire based field effect transistor in the quasiballistic regime under large magnetic field is investigated. The quasi-1D nanowire is fully characterized by a bias voltage spectroscopy and measurements under magnetic field up to 50 T applied either perpendicular or parallel to the nanowire axis lifting the spin and orbital degeneracies of the subbands. Under normal magnetic field, the conductance shows quantized steps due to the backscattering reduction and a decrease due to depopulation of the 1D modes. Under axial magnetic field, a quasioscillatory behavior is evidenced due to the coupling of the magnetic field with the angular momentum of the wave function. In addition the formation of cyclotron orbits is highlighted under high magnetic field. The experimental results are compared with theoretical calculation of the 1D band structure and related parameters.

  14. High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

    Wang Yuanli; Jin, P.; Ye, X.L.; Zhang, C.L.; Shi, G.X.; Li, R.Y.; Chen, Y.H.; Wang, Z.G.

    2006-01-01

    Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 (convolutionsign) off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

  15. Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates

    Hatke, A. T.; Wang, T.; Thomas, C.; Gardner, G. C.; Manfra, M. J.

    2017-10-01

    We investigate the transport properties of a two-dimensional electron gas residing in strained composite quantum wells of In0.75Ga0.25As/InAs/In0.75Ga0.25As cladded with In0.75Al0.25As barriers grown metamorphically on insulating InP substrates. By optimizing the widths of the In0.75Ga0.25As layers, the In0.75Al0.25As barrier, and the InAs quantum well, we demonstrate mobility in excess of 1 ×106 cm2/V s. Mobility vs. density data indicate that scattering is dominated by a residual three dimensional distribution of charged impurities. We extract the effective Rashba parameter and spin-orbit length for these composite quantum wells.

  16. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    Alonso-Gonzalez, Pablo; Gonzalez, Luisa; Gonzalez, Yolanda; Fuster, David; Fernandez-Martinez, Ivan; Martin-Sanchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates

  17. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

    2008-01-01

    We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

  18. Formation of InAs/GaAs quantum dots from a subcritical InAs wetting layer: A reflection high-energy electron diffraction and theoretical study

    Song, H. Z.; Usuki, T.; Nakata, Y.; Yokoyama, N.; Sasakura, H.; Muto, S.

    2006-01-01

    InAs/GaAs quantum dots (QD's) are formed by postgrowth annealing of an InAs wetting layer thinner than the critical thickness for the transition from two- (2D) to three-dimensional (3D) growth mode. Reflection high energy electron diffraction is used to monitor the QD formation. Based on a mean-field theory [Phys. Rev. Lett. 79, 897 (1997)], the time evolution of total QD's volume, first increasing and finally saturating, is well explained by precursors forming during wetting layer growth and converting into nucleated QD's after growth stop. Both the saturation QD's volume and the QD nucleation rate depend exponentially on the InAs coverage. These behaviors and their temperature and InAs growth rate dependences are essentially understandable in the frame of the mean-field theory. Similar analysis to conventional QD growth suggests that the often observed significant mass transport from wetting layer to QD's can be ascribed to the precursors existing before 2D-3D growth mode transition

  19. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    Alonso-González, Pablo; González, Luisa; González, Yolanda; Fuster, David; Fernández-Martinez, Ivan; Martin-Sánchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs

  20. High mobility emissive organic semiconductor

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  1. Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

    Inoue, Jun; Akahane, Kouichi; Yamamoto, Naokatsu; Isu, Toshiro; Tsuchiya, Masahiro

    2006-01-01

    We examined the absorption saturation properties in the 1.5 μm band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-μm-band quantum dot saturable absorber with interference enhancement. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Time-resolved x-ray diffraction measurements of high-density InAs quantum dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption

    Kakuda, Naoki; Yamaguchi, Koichi; Kaizu, Toshiyuki; Takahasi, Masamitu; Fujikawa, Seiji

    2010-01-01

    Self-assembly of high-density InAs quantum dots (QDs) on Sb-irradiated GaAs buffer layers was observed in-situ by a time-resolved X-ray diffraction (XRD) technique using a combination of XRD and molecular beam epitaxy. Evolution of dot height and lattice constant was analyzed during InAs QD growth and subsequent growth interruption (GI), and as a result, dislocated giant dots due to coalescence and coherent dots were separately evaluated. An Sb-irradiated GI (Sb-GI) method to be applied after InAs growth was attempted for the suppression of coalescence. Using this method, the XRD intensity of giant dots decreased, and the photoluminescence intensity of InAs QDs was enhanced. High-density InAs QDs without giant dots were produced by using the combination of the QD growth on the Sb-irradiated GaAs buffer layers and the Sb-GI. (author)

  3. Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

    Savelyev, Igor; Blumin, Marina; Wang, Shiliang; Ruda, Harry E.

    2017-01-01

    Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creating high performance sensors that can be used in applications such as point-of-care testing for patients diagnosed with chronic diseases. Here, we propose devices based on a parallel configuration of InAs nanowires and investigate sensor responses from measurements of conductance over time and FET characteristics. The devices were tested in controlled concentrations of vapour containing acetic acid, 2-butanone and methanol. After adsorption of analyte molecules, trends in the transient current and transfer curves are correlated with the nature of the surface interaction. Specifically, we observed proportionality between acetic acid concentration and relative conductance change, off current and surface charge density extracted from subthreshold behaviour. We suggest the origin of the sensing response to acetic acid as a two-part, reversible acid-base and redox reaction between acetic acid, InAs and its native oxide that forms slow, donor-like states at the nanowire surface. We further describe a simple model that is able to distinguish the occurrence of physical versus chemical adsorption by comparing the values of the extracted surface charge density. These studies demonstrate that InAs nanowires can produce a multitude of sensor responses for the purpose of developing next generation, multi-dimensional sensor applications. PMID:28714903

  4. Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an InxGa1−xAs quantum well with InAs inserts

    Kulbachinskii, V. A.; Oveshnikov, L. N.; Lunin, R. A.; Yuzeeva, N. A.; Galiev, G. B.; Klimov, E. A.; Maltsev, P. P.

    2015-01-01

    HEMT structures with In 0.53 Ga 0.47 As quantum well are synthesized using molecular-beam epitaxy on InP substrates. The structures are double-side Si δ-doped so that two dimensionally-quantized subbands are occupied. The effect of the central InAs nanoinsert in the quantum well on the electron effective masses m* and mobilities in each subband is studied. For experimental determination of m*, the quantum μ q and transport μ t mobilities of the two-dimensional electron gas in each dimensionally-quantized subband, the Shubnikov-de Haas effect is measured at two temperatures of 4.2 and 8.4 K. The electron effective masses are determined by the temperature dependence of the oscillation amplitudes, separating the oscillations of each dimensionally-quantized subband. The Fourier spectra of oscillations are used to determine the electron mobilities μ q and μ t in each dimensionally-quantized subband. It is shown that m* decreases as the InAs-nanoinsert thickness d in the In 0.53 Ga 0.47 As quantum well and electron mobilities increase. The maximum electron mobility is observed at the insert thickness d = 3.4 nm

  5. Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures

    Fedoryshyn, Yuriy; Ostinelli, Olivier; Alt, Andreas; Pallin, Angel; Bolognesi, Colombo R.

    2014-01-01

    The optimization of heavily strained Ga 0.25 In 0.75 As/Al 0.48 In 0.52 As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm 2 /Vs and 70 000 cm 2 /Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10 12  cm −2 throughout the entire study

  6. Identification of Ina proteins from Fusarium acuminatum

    Scheel, Jan Frederik; Kunert, Anna Theresa; Pöschl, Ulrich; Fröhlich-Nowoisky, Janine

    2015-04-01

    Freezing of water above -36° C is based on ice nucleation activity (INA) mediated by ice nucleators (IN) which can be of various origins. Beside mineral IN, biological particles are a potentially important source of atmospheric IN. The best-known biological IN are common plant-associated bacteria. The IN activity of these bacteria is induced by a surface protein on the outer cell membrane, which is fully characterized. In contrast, much less is known about the nature of fungal IN. The fungal genus Fusarium is widely spread throughout the earth. It belongs to the Ascomycota and is one of the most severe fungal pathogens. It can affect a variety of organisms from plants to animals including humans. INA of Fusarium was already described about 30 years ago and INA of Fusarium as well as other fungal genera is assumed to be mediated by proteins or at least to contain a proteinaceous compound. Although many efforts were made the precise INA machinery of Fusarium and other fungal species including the proteins and their corresponding genes remain unidentified. In this study preparations from living fungal samples of F. acuminatum were fractionated by liquid chromatography and IN active fractions were identified by freezing assays. SDS-page and de novo sequencing by mass spectrometry were used to identify the primary structure of the protein. Preliminary results show that the INA protein of F. acuminatum is contained in the early size exclusion chromatography fractions indicating a high molecular size. Moreover we could identify a single protein band from IN active fractions at 130-145 kDa corresponding to sizes of IN proteins from bacterial species. To our knowledge this is for the first time an isolation of a single protein from in vivo samples, which can be assigned as IN active from Fusarium.

  7. Growth and electrical characterization of Zn-doped InAs and InAs{sub 1-x}Sb{sub x}

    Venter, A., E-mail: andre.venter@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa); Shamba, P.; Botha, L.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth (South Africa)

    2009-06-01

    The electrical properties of Zn doped InAs and InAsSb layers grown on semi-insulating GaAs by metal organic vapour phase epitaxy, using dimethyl zinc as the p-type dopant source, have been studied. The influence of dopant flow rate, V/III ratio and substrate orientation on the electrical properties of these InAs and InAs{sub 1-x}Sb{sub x} layers have been studied at a few appropriate growth temperatures. A promising group V source, tertiary butyl arsenic was used as an alternative to arsenic hydride in the case of InAs growth. The electrical properties of the InAs and InAs{sub 1-x}Sb{sub x} epitaxial layers were mainly studied by the Hall effect. However, surface accumulation in these materials results in deceptive Hall results being extracted. A two layer model (assuming the layer to consist of two parallel conducting paths viz. surface and bulk) has therefore been used to extract sensible transport properties. In addition, conventional Hall measurements ignores the high electron to hole mobility ratio in InAs and InAsSb leading to erroneous transport properties.

  8. Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

    Takeshi Inaoka

    2012-12-01

    Full Text Available Adsorption on an n-type InAs surface often induces a gradual formation of a carrier-accumulation layer at the surface. By means of high-resolution photoelectron spectroscopy (PES, Betti et al. made a systematic observation of subbands in the accumulation layer in the formation process. Incorporating a highly nonparabolic (NP dispersion of the conduction band into the local-density-functional (LDF formalism, we examine the subband structure in the accumulation-layer formation process. Combining the LDF calculation with the PES experiment, we make an accurate evaluation of the accumulated-carrier density, the subband-edge energies, and the subband energy dispersion at each formation stage. Our theoretical calculation can reproduce the three observed subbands quantitatively. The subband dispersion, which deviates downward from that of the projected bulk conduction band with an increase in wave number, becomes significantly weaker in the formation process. Accurate evaluation of the NP subband dispersion at each formation stage is indispensable in making a quantitative analysis of collective electronic excitations and transport properties in the subbands.

  9. Observation of infrared absorption of InAs quantum dot structures in AlGaAs matrix toward high-efficiency solar cells

    Yoshikawa, Hirofumi; Watanabe, Katsuyuki; Kotani, Teruhisa; Izumi, Makoto; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2018-06-01

    In accordance with the detailed balance limit model of single-intermediate-band solar cells (IBSCs), the optimum matrix bandgap and IB–conduction band (CB) energy gap are ∼1.9 and 0.7 eV, respectively. We present the room-temperature polarized infrared absorption of 20 stacked InAs quantum dot (QD) structures in the Al0.32Ga0.68As matrix with a bandgap of ∼1.9 eV for the design of high-efficiency IBSCs by using a multipass waveguide geometry. We find that the IB–CB absorption is almost independent of the light polarization, and estimate the magnitude of the absorption per QD layer to be ∼0.01%. We also find that the IB–CB absorption edge of QD structures with a wide-gap matrix is ∼0.41 eV. These results indicate that both the significant increase in the magnitude of IB–CB absorption and the lower energy of the IB state for the higher IB–CB energy gap are necessary toward the realization of high-efficiency IBSCs.

  10. High electron mobility InN

    Jones, R. E.; Li, S. X.; Haller, E. E.; van Genuchten, H. C. M.; Yu, K. M.; Ager, J. W. III; Liliental-Weber, Z.; Walukiewicz, W.; Lu, H.; Schaff, W. J.

    2007-01-01

    Irradiation of InN films with 2 MeV He + ions followed by thermal annealing below 500 deg. C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility

  11. Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

    Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

    2018-06-01

    InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

  12. Improved Saturation Performance in High Speed Waveguide Photodetectors at 1.3 ??sing an Asymmetric InA1GaAs/InGaAsP Structure

    Vang, T. A.; Davis, L.; Keo, S.; Forouhar, S. F.

    1996-01-01

    Waveguide photodetector (WGPD) results have recently been presented demonstrating the very large bandwidth-efficiency product potential of these devices. Improved saturation and linearity characteristics are realized in waveguide p-i-n photodetectors at 1.3 ??y using an asymmetric cladding structure with InA1GaAs/InGaAsP in the anode and InGaAsP in the cathode.

  13. High-Efficiency Low-Cost Solar Receiver for Use Ina a Supercritical CO2 Recompression Cycle

    Sullivan, Shaun D. [Brayton Energy, LLC, Portsmouth, NH (United States); Kesseli, James [Brayton Energy, LLC, Portsmouth, NH (United States); Nash, James [Brayton Energy, LLC, Portsmouth, NH (United States); Farias, Jason [Brayton Energy, LLC, Portsmouth, NH (United States); Kesseli, Devon [Brayton Energy, LLC, Portsmouth, NH (United States); Caruso, William [Brayton Energy, LLC, Portsmouth, NH (United States)

    2016-04-06

    This project has performed solar receiver designs for two supercritical carbon dioxide (sCO2) power cycles. The first half of the program focused on a nominally 2 MWe power cycle, with a receiver designed for test at the Sandia Solar Thermal Test Facility. This led to an economical cavity-type receiver. The second half of the program focused on a 10 MWe power cycle, incorporating a surround open receiver. Rigorous component life and performance testing was performed in support of both receiver designs. The receiver performance objectives are set to conform to the US DOE goals of 6¢/kWh by 2020 . Key findings for both cavity-type and direct open receiver are highlighted below: A tube-based absorber design is impractical at specified temperatures, pressures and heat fluxes for the application; a plate-fin architecture however has been shown to meet performance and life targets; the $148/kWth cost of the design is significantly less than the SunShot cost target with a margin of 30%; the proposed receiver design is scalable, and may be applied to both modular cavity-type installations as well as large utility-scale open receiver installations; the design may be integrated with thermal storage systems, allowing for continuous high-efficiency electrical production during off-sun hours; costs associated with a direct sCO2 receiver for a sCO2 Brayton power cycle are comparable to those of a typical molten salt receiver; lifetimes in excess of the 90,000 hour goal are achievable with an optimal cell geometry; the thermal performance of the Brayton receiver is significantly higher than the industry standard, and enables at least a 30% efficiency improvement over the performance of the baseline steam-Rankine boiler/cycle system; brayton’s patent-pending quartz tube window provides a greater than five-percent efficiency benefit to the receiver by reducing both convection and radiation losses.

  14. Electrical characterisation of Sn doped InAs grown by MOVPE

    Shamba, P.; Botha, L.; Krug, T.; Venter, A.; Botha, J.R.

    2008-01-01

    The feasibility of tetraethyl tin (TESn) as an n-type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi-insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 10 17 and 4.7 x 10 19 cm -3 with 77 K mobilities ranging from 12 000 to 1300 cm 2 /Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Calculation of Nonlinear Thermoelectric Coefficients of InAs1-xSbx Using Monte Carlo Method

    Sadeghian, RB; Bahk, JH; Bian, ZX; Shakouri, A

    2011-12-28

    It was found that the nonlinear Peltier effect could take place and increase the cooling power density when a lightly doped thermoelectric material is under a large electrical field. This effect is due to the Seebeck coefficient enhancement from an electron distribution far from equilibrium. In the nonequilibrium transport regime, the solution of the Boltzmann transport equation in the relaxation-time approximation ceases to apply. The Monte Carlo method, on the other hand, proves to be a capable tool for simulation of semiconductor devices at small scales as well as thermoelectric effects with local nonequilibrium charge distribution. InAs1-xSb is a favorable thermoelectric material for nonlinear operation owing to its high mobility inherited from the binary compounds InSb and InAs. In this work we report simulation results on the nonlinear Peltier power of InAs1-xSb at low doping levels, at room temperature and at low temperatures. The thermoelectric power factor in nonlinear operation is compared with the maximum value that can be achieved with optimal doping in the linear transport regime.

  16. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Bierwagen, O.

    2007-01-01

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  17. Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

    Bierwagen, O.

    2007-12-20

    Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

  18. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy

    Joyce, Hannah J; Docherty, Callum J; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B; Gao Qiang; Tan, H Hoe; Jagadish, Chennupati

    2013-01-01

    We have performed a comparative study of ultrafast charge carrier dynamics in a range of III–V nanowires using optical pump–terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm 2 V −1 s −1 , which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s −1 . This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10 5   cm s −1 . These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices. (paper)

  19. Progress in low light-level InAs detectors- towards Geiger-mode detection

    Tan, Chee Hing; Ng, Jo Shien; Zhou, Xinxin; David, John; Zhang, Shiyong; Krysa, Andrey

    2017-05-01

    InAs avalanche photodiodes (APDs) can be designed such that only electrons are allowed to initiate impact ionization, leading to the lowest possible excess noise factor. Optimization of wet chemical etching and surface passivation produced mesa APDs with bulk dominated dark current and responsivity that are comparable and higher, respectively, than a commercial InAs detector. Our InAs electron-APDs also show high stability with fluctuation of 0.1% when operated at a gain of 11.2 over 60 s. These InAs APDs can detect very weak signal down to 35 photons per pulse. Fabrication of planar InAs by Be implantation produced planar APDs with bulk dominated dark current. Annealing at 550 °C was necessary to remove implantation damage and to activate Be dopants. Due to minimal diffusion of Be, thick depletion of 8 μm was achieved. Since the avalanche gain increases exponentially with the thickness of avalanche region, our planar APD achieved high gain > 300 at 200 K. Our work suggest that both mesa and planar InAs APDs can exhibit high gain. When combined with a suitable preamplifier, single photon detection using InAs electron-APDs could be achieved.

  20. Analytical admittance characterization of high mobility channel

    Mammeri, A. M.; Mahi, F. Z., E-mail: fati-zo-mahi2002@yahoo.fr [Institute of Science and Technology, University of Bechar (Algeria); Varani, L. [Institute of Electronics of the South (IES - CNRS UMR 5214), University of Montpellier (France)

    2015-03-30

    In this contribution, we investigate the small-signal admittance of the high electron mobility transistors field-effect channels under a continuation branching of the current between channel and gate by using an analytical model. The analytical approach takes into account the linearization of the 2D Poisson equation and the drift current along the channel. The analytical equations discuss the frequency dependence of the admittance at source and drain terminals on the geometrical transistor parameters.

  1. InaSAFE applications in disaster preparedness

    Pranantyo, Ignatius Ryan; Fadmastuti, Mahardika; Chandra, Fredy

    2015-04-01

    Disaster preparedness activities aim to reduce the impact of disasters by being better prepared to respond when a disaster occurs. In order to better anticipate requirements during a disaster, contingency planning activities can be undertaken prior to a disaster based on a realistic disaster scenario. InaSAFE is a tool that can inform this process. InaSAFE is a free and open source software that estimates the impact to people and infrastructure from potential hazard scenarios. By using InaSAFE, disaster managers can develop scenarios of disaster impacts (people and infrastructures affected) to inform their contingency plan and emergency response operation plan. While InaSAFE provides the software framework exposure data and hazard data are needed as inputs to run this software. Then InaSAFE can be used to forecast the impact of the hazard scenario to the exposure data. InaSAFE outputs include estimates of the number of people, buildings and roads are affected, list of minimum needs (rice and clean water), and response checklist. InaSAFE is developed by Indonesia's National Disaster Management Agency (BNPB) and the Australian Government, through the Australia-Indonesia Facility for Disaster Reduction (AIFDR), in partnership with the World Bank - Global Facility for Disaster Reduction and Recovery (GFDRR). This software has been used in many parts of Indonesia, including Padang, Maumere, Jakarta, and Slamet Mountain for emergency response and contingency planning.

  2. Monte Carlo simulation of ballistic transport in high-mobility channels

    Sabatini, G; Marinchio, H; Palermo, C; Varani, L; Daoud, T; Teissier, R [Institut d' Electronique du Sud (CNRS UMR 5214) - Universite Montpellier II (France); Rodilla, H; Gonzalez, T; Mateos, J, E-mail: sabatini@ies.univ-montp2.f [Departamento de Fisica Aplicada - Universidad de Salamanca (Spain)

    2009-11-15

    By means of Monte Carlo simulations coupled with a two-dimensional Poisson solver, we evaluate directly the possibility to use high mobility materials in ultra fast devices exploiting ballistic transport. To this purpose, we have calculated specific physical quantities such as the transit time, the transit velocity, the free flight time and the mean free path as functions of applied voltage in InAs channels with different lengths, from 2000 nm down to 50 nm. In this way the transition from diffusive to ballistic transport is carefully described. We remark a high value of the mean transit velocity with a maximum of 14x10{sup 5} m/s for a 50 nm-long channel and a transit time shorter than 0.1 ps, corresponding to a cutoff frequency in the terahertz domain. The percentage of ballistic electrons and the number of scatterings as functions of distance are also reported, showing the strong influence of quasi-ballistic transport in the shorter channels.

  3. Monte Carlo simulation of ballistic transport in high-mobility channels

    Sabatini, G; Marinchio, H; Palermo, C; Varani, L; Daoud, T; Teissier, R; Rodilla, H; Gonzalez, T; Mateos, J

    2009-01-01

    By means of Monte Carlo simulations coupled with a two-dimensional Poisson solver, we evaluate directly the possibility to use high mobility materials in ultra fast devices exploiting ballistic transport. To this purpose, we have calculated specific physical quantities such as the transit time, the transit velocity, the free flight time and the mean free path as functions of applied voltage in InAs channels with different lengths, from 2000 nm down to 50 nm. In this way the transition from diffusive to ballistic transport is carefully described. We remark a high value of the mean transit velocity with a maximum of 14x10 5 m/s for a 50 nm-long channel and a transit time shorter than 0.1 ps, corresponding to a cutoff frequency in the terahertz domain. The percentage of ballistic electrons and the number of scatterings as functions of distance are also reported, showing the strong influence of quasi-ballistic transport in the shorter channels.

  4. Mobilities

    to social networks, personal identities, and our relationship to the built environment. The omnipresence of mobilities within everyday life, high politics, technology, and tourism (to mention but a few) all point to a key insight harnessed by the ‘mobilities turn’. Namely that mobilities is much more than......The world is on the move. This is a widespread understanding by many inhabitants of contemporary society across the Globe. But what does it actually mean? During over one decade the ‘mobilities turn’ within the social sciences have provided a new set of insights into the repercussions of mobilities...... and environmental degradation. The spaces and territories marked by mobilities as well as the sites marked by the bypassing of such are explored. Moreover, the architectural and technological dimensions to infrastructures and sites of mobilities will be included as well as the issues of power, social exclusion...

  5. Electronic structure of GaAs with InAs (001) monolayer

    Tit, N.; Peressi, M.

    1995-04-01

    The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs) 1 (GaAs) n (001) strained superlattice is studied via ab-initio self-consistent pseudopotential calculations. Both electrons and holes are localized nearby the inserted InAs monolayer, which therefore acts as a quantum well for all the charge carriers. The small thickness of the inserted InAs slab is responsible of high confinement energies for the charge carriers, and therefore the interband electron-heavy-hole transition energy is close to the energy gap of the bulk GaAs, in agreement with recent experimental data. (author). 18 refs, 4 figs

  6. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

    Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

    2014-11-21

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

  7. Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

    Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

    2014-01-01

    We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

  8. Growth and characterization of InAs quantum dots on silicon

    Hansen, L.; Ankudinov, A.; Bensing, F.; Wagner, J.; Wagner, V.; Geurts, J. [Wuerzburg Univ. (Germany). Lehrstuhl fuer Experimentelle Physik 3; Ade, G.; Hinze, P. [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany); Waag, A. [Ulm Univ. (Germany). Abt. Halbleiterphysik

    2001-03-08

    We present a comprehensive investigation of molecular beam epitaxial (MBE) grown InAs quantum dots (QD) on silicon (001) and (111) by reflection high energy electron diffraction (RHEED) and Raman spectroscopy in UHV environment and ex-situ by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Two different ways were developed to prepare up to 10{sup 11} cm{sup -2} InAs QDs on Si(001). One is the conventional mode by exceeding a critical thickness of deposition at which 2D growth changes towards a 3D growth mode. A second way is a dewetting transition, induced by cooling an approximately 1 ML thin 2D InAs layer from growth temperature below a critical temperature at which RHEED indicates the formation of nanoislands. Samples grown in both manners show significant differences in morphology and shape though RHEED, TEM and Raman studies correspondingly indicate strain relaxation. On Si(111) InAs grows in the common temperature range for InAs growth ({proportional_to}400 C) in flat clusters separated by deep trenches. A previous passivation of the Si(111) surface with arsenic at {proportional_to}700 C on the other hand leads to the formation of large InAs nanocrystals. (orig.)

  9. Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

    Dhifallah, I.; Daoudi, M.; Bardaoui, A.; Eljani, B.; Ouerghi, A.; Chtourou, R.

    2011-01-01

    Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E e-hh ) and electron-light-hole (E e-lh ) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-δ-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-δ-doped samples, we have determined the internal electric field introduced by ionized Si-δ-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: → Studying HEMTs structures with different silicon doping content. → An increase of the electric field in the InAs layer with increasing Si content. → The interband energy transitions in the HEMTs structures have been obtained from PR. → Experimental and theoretical values of transitions energies were in good agreement.

  10. Homo- and heteroepitaxial growth behavior of upright InAs nanowires on InAs and GaAs substrates

    Bauer, Jens; Gottschalch, Volker; Paetzelt, Hendrik [Institut fuer Anorganische Chemie, Universitaet Leipzig, Johannesallee 29, D-04103 Leipzig (Germany); Wagner, Gerald [Institut fuer Kristallographie und Mineralogie, Universitaet Leipzig, Linnestr. 5, D-04103 Leipzig (Germany); Pietsch, Ulrich [Festkoerperphysik, Universitaet Siegen, D-57068 Siegen (Germany)

    2008-07-01

    Semiconductor nanowires (NW) acquire recently attraction because of promising new application fields in electronics and optoelectronic. We applied the vapor-liquid-solid mechanism with gold seeds in combination with low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) to achieve replicable InAs NW growth with high growth rates. Since the initial alloying of the gold seeds with the substrate material plays a deciding role for the inceptive NW growth, InAs free standing nanowires were grown on GaAs(111)B substrate as well as on InAs/GaAs(111)B quasi-substrate. The influence of the MOVPE parameters will be discussed with respect to NW morphology and real-structure. A special focus will be set on the heteroepitaxial InAs NW growth on GaAs substrates. Gracing-incidence X-ray studies and transmission electron microscopy investigations revealed the existence of a thin Ga{sub x}In{sub 1-x}As graduated alloy layer with embedded crystalline gold alloy particles at the NW substrate interface. The effect of droplet composition on the VLS growth will be presented in a thermodynamic model.

  11. Women Fellows of INAE | Women in Science | Initiatives | Indian ...

    Women Fellows of INAE. INAE - Indian National Academy of Engineering. Ms. Alpa Sheth Civil Engineering. Prof. Bharathi Bhat Electronics & Communication Engineering. Prof. Dipanwita Roy Chowdhury Computer Engineering and Information Technology. Prof. Kamala Krithivasan Computer Engineering and Information ...

  12. Cassette pontoon bridge of high mobility

    Krzysztof KOSIUCZENKO

    2011-01-01

    Full Text Available Looking through the known and used buoyant systems, it can be remarked that the single buoyant segments are the stiff objects made of steel or plastic with variable dimensions and a complex construction. The ready to use buoyant segments, that assure the proper displacement, must have the factory leak-tightness. They take up a big transportation volume and need the assurance of the suitably abundant means of transport. Usually the heavy wheeled vehicles are needed because of high own mass of buoyant segment and large gauges. The exploitation of such constructions is very expensive. A cassette pontoon bridge, presented in this paper, is the proposition of the increase of the mobility of construction. The decrease of the single buoyant segment dimensions with the assurance of the capacity leads that more segments fit into in the same dimensions of the loading compartment of the vehicle and storage accommodation. The application of standardized joints assures the assembly efficiency with not numerous crew.

  13. InAs nanocrystals on SiO2/Si by molecular beam epitaxy for memory applications

    Hocevar, Moiera; Regreny, Philippe; Descamps, Armel; Albertini, David; Saint-Girons, Guillaume; Souifi, Abdelkader; Gendry, Michel; Patriarche, Gilles

    2007-01-01

    We studied a memory structure based on InAs nanocrystals grown by molecular beam epitaxy directly on thermal SiO 2 on silicon. Both nanocrystal diameter and density can be controlled by growth parameters. Transmission electron microscopy analysis shows high crystallinity and low size dispersion. In an electrical test structure with a 3.5 nm tunnel oxide, we observed that 80% of the initial injected electrons remain stored in the InAs nanocrystals after 3 months and that the retention time for electrons in InAs nanocrystals is four orders of magnitude higher than in silicon nanocrystals

  14. InAs quantum dots as charge storing elements for applications in flash memory devices

    Islam, Sk Masiul; Biswas, Pranab [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India)

    2015-08-15

    Graphical abstract: - Highlights: • Catalyst-free growth of InAs quantum dots was carried out on high-k ZrO{sub 2}. • Memory device with InAs quantum dots as charge storage nodes are fabricated. • Superior memory window, low leakage and reasonably good retention were observed. • Carrier transport phenomena are explained in both program and erase operations. - Abstract: InAs quantum dots (QDs) were grown by metal organic chemical vapor deposition technique to use them as charge storage nodes. Uniform QDs were formed with average diameter 5 nm and height 5–10 nm with a density of 2 × 10{sup 11} cm{sup −2}. The QDs were grown on high-k dielectric layer (ZrO{sub 2}), which was deposited onto ultra-thin GaP passivated p-GaAs (1 0 0) substrate. A charge storage device with the structure Metal/ZrO{sub 2}/InAs QDs/ZrO{sub 2}/(GaP)GaAs/Metal was fabricated. The devices containing InAs QDs exhibit superior memory window, low leakage current density along with reasonably good charge retention. A suitable electronic band diagram corresponding to programming and erasing operations was proposed to explain the operation.

  15. High school students’ usage behavior and views about mobile phones

    Ahmet Ergin

    2014-09-01

    Full Text Available Objective: The aim of this study was to determine high school students’ usage behavior and views about mobile phones. Methods:Totally 253 (85.5% students educated at Honaz High School within the academic year 2010-2011, participated to this cross-sectional study and a questionnaire consisting of 42 questions which aimed to determine usage behavior and views about mobile phones was administered to the students. Results:The mean age of the students was 16.1 ± 1.1 years, and 56.9% of them were girl. 79.8% of students have mobile phone and 53.9% of them make daily average of over 30 minutes mobile phone calls. 76.1% of participants stated that they did not use headphones, 78.1% did not turn off their mobile phones when they are sleeping and 67.3% put it right next to them or under the pillow. 83.1% of students think mobile phones are harmful for human health, 56.7% think the base stations are harmful to human health and the environment, 91.3% think mobile phones are harmful for children, pregnant women and elderly people. Conclusion: It is found that students’ mobile phone ownership is widespread, the age of starting to use mobile phone and headphones usage is low, knowledge about the base stations is not adequate.

  16. Micromagnetics on high-performance workstation and mobile computational platforms

    Fu, S.; Chang, R.; Couture, S.; Menarini, M.; Escobar, M. A.; Kuteifan, M.; Lubarda, M.; Gabay, D.; Lomakin, V.

    2015-05-01

    The feasibility of using high-performance desktop and embedded mobile computational platforms is presented, including multi-core Intel central processing unit, Nvidia desktop graphics processing units, and Nvidia Jetson TK1 Platform. FastMag finite element method-based micromagnetic simulator is used as a testbed, showing high efficiency on all the platforms. Optimization aspects of improving the performance of the mobile systems are discussed. The high performance, low cost, low power consumption, and rapid performance increase of the embedded mobile systems make them a promising candidate for micromagnetic simulations. Such architectures can be used as standalone systems or can be built as low-power computing clusters.

  17. Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

    LaTulipe, D.C.; Frank, D.J.; Munekata, H.

    1991-01-01

    Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

  18. Optical emission of InAs nanowires

    Möller, M; De Lima Jr, M M; Cantarero, A; Chiaramonte, T; Cotta, M A; Iikawa, F

    2012-01-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende–wurtzite alternating layers, and to the donor–acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature. (paper)

  19. Optical emission of InAs nanowires

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.

    2012-09-01

    Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to-band recombination from wurtzite InAs appears. We estimated a lower bound for the wurtzite band gap energy of approximately 0.46 eV at low temperature.

  20. High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region

    Khan, Mohammed Zahed Mustafa; Majid, Mohammed Abdul; Ng, Tien Khee; Ooi, Boon S.

    2013-01-01

    The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.

  1. Surface Preparation of InAs (110 Using Atomic Hydrogen

    T.D. Veal

    2002-06-01

    Full Text Available Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(110 surfaces.  X-ray photoelectron spectroscopy (XPS was used to obtain chemical composition and chemical state information about the surface, before and after the removal of the atmospheric contamination. Low energy electron diffraction (LEED and high-resolution electron-energy-loss spectroscopy (HREELS were also used, respectively, to determine the surface reconstruction and degree of surface ordering, and to probe the adsorbed contaminant vibrational modes and the collective excitations of the clean surface. Clean, ordered and stoichiometric  InAs(110-(1×1 surfaces were obtained by exposure to thermally generated atomic hydrogen at a substrate temperature as low as 400ºC.  Semi-classical dielectric theory analysis of HREEL spectra of the phonon and plasmon excitations of the clean surface indicate that no electronic damage or dopant passivation were induced by the surface preparation method.

  2. High mobility transparent conducting oxides for thin film solar cells

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  3. High level bacterial contamination of secondary school students' mobile phones.

    Kõljalg, Siiri; Mändar, Rando; Sõber, Tiina; Rööp, Tiiu; Mändar, Reet

    2017-06-01

    While contamination of mobile phones in the hospital has been found to be common in several studies, little information about bacterial abundance on phones used in the community is available. Our aim was to quantitatively determine the bacterial contamination of secondary school students' mobile phones. Altogether 27 mobile phones were studied. The contact plate method and microbial identification using MALDI-TOF mass spectrometer were used for culture studies. Quantitative PCR reaction for detection of universal 16S rRNA, Enterococcus faecalis 16S rRNA and Escherichia coli allantoin permease were performed, and the presence of tetracycline ( tet A, tet B, tet M), erythromycin ( erm B) and sulphonamide ( sul 1) resistance genes was assessed. We found a high median bacterial count on secondary school students' mobile phones (10.5 CFU/cm 2 ) and a median of 17,032 bacterial 16S rRNA gene copies per phone. Potentially pathogenic microbes ( Staphylococcus aureus , Acinetobacter spp. , Pseudomonas spp., Bacillus cereus and Neisseria flavescens ) were found among dominant microbes more often on phones with higher percentage of E. faecalis in total bacterial 16S rRNA. No differences in contamination level or dominating bacterial species between phone owner's gender and between phone types (touch screen/keypad) were found. No antibiotic resistance genes were detected on mobile phone surfaces. Quantitative study methods revealed high level bacterial contamination of secondary school students' mobile phones.

  4. Mobile high-voltage switchboard. Variable and uncomplicated; Mobile Hochspannungsschaltanlage. Variabel und unkompliziert in der Anwendung

    Albert, Andreas [Siemens AG, Erlangen (Germany). Sector Energy

    2009-07-13

    The mobile high-voltage switchboard ''REE-Movil 2'' for voltages up to 245 kV provides a complete and nearly autonomous switchboard in a container, a solution that has been available in the medium-voltage sector for some time already. It can be used whenever a quick replacement of a switchboard section or a temporary supplement to a switching substation is needed. The container is mounted on a trailer for maximum flexibility and mobility. (orig.)

  5. High mobility and quantum well transistors design and TCAD simulation

    Hellings, Geert

    2013-01-01

    For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

  6. Positioning of self-assembled InAs quantum dots by focused ion beam implantation

    Mehta, M.

    2007-01-01

    Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 μm was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from positioned QDs confirm their good optical quality. (orig.)

  7. An Architecture Offering Mobile Pollution Sensing with High Spatial Resolution

    Oscar Alvear

    2016-01-01

    Full Text Available Mobile sensing is becoming the best option to monitor our environment due to its ease of use, high flexibility, and low price. In this paper, we present a mobile sensing architecture able to monitor different pollutants using low-end sensors. Although the proposed solution can be deployed everywhere, it becomes especially meaningful in crowded cities where pollution values are often high, being of great concern to both population and authorities. Our architecture is composed of three different modules: a mobile sensor for monitoring environment pollutants, an Android-based device for transferring the gathered data to a central server, and a central processing server for analyzing the pollution distribution. Moreover, we analyze different issues related to the monitoring process: (i filtering captured data to reduce the variability of consecutive measurements; (ii converting the sensor output to actual pollution levels; (iii reducing the temporal variations produced by mobile sensing process; and (iv applying interpolation techniques for creating detailed pollution maps. In addition, we study the best strategy to use mobile sensors by first determining the influence of sensor orientation on the captured values and then analyzing the influence of time and space sampling in the interpolation process.

  8. Highly Mobile Students: Educational Problems and Possible Solutions. ERIC/CUE Digest, Number 73.

    ERIC Clearinghouse on Urban Education, New York, NY.

    The following two types of student mobility stand out as causing educational problems: (1) inner-city mobility, which is prompted largely by fluctuations in the job market; and (2) intra-city mobility, which is caused by upward mobility or by poverty and homelessness. Most research indicates that high mobility negatively affects student…

  9. GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

    Nevedomskii, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

    2009-01-01

    Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The InAs quantum dots are formed by the Stranskii-Krastanow mechanism, whereas the As quantum dots are self-assembled in the GaAs layer grown at low temperature with a large As excess. The microstructure of the samples is studied by transmission electron microscopy. It is established that the As metal quantum dots formed in the immediate vicinity of the InAs semiconductor quantum dots are larger in size than the As quantum dots formed far from the InAs quantum dots. This is apparently due to the effect of strain fields of the InAs quantum dots upon the self-assembling of As quantum dots. Another phenomenon apparently associated with local strains around the InAs quantum dots is the formation of V-like defects (stacking faults) during the overgrowth of the InAs quantum dots with the GaAs layer by low-temperature molecular beam epitaxy. Such defects have a profound effect on the self-assembling of As quantum dots. Specifically, on high-temperature annealing needed for the formation of large-sized As quantum dots by Ostwald ripening, the V-like defects bring about the dissolution of the As quantum dots in the vicinity of the defects. In this case, excess arsenic most probably diffuses towards the open surface of the sample via the channels of accelerated diffusion in the planes of stacking faults.

  10. Interface-controlled, high-mobility organic transistors

    Jurchescu, Oana D.; Popinciuc, Mihaita; van Wees, Bart J.; Palstra, Thomas T. M.

    2007-01-01

    The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the

  11. High mobility polymer gated organic field effect transistor using zinc ...

    Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film ... At room temperature, these transistors exhibit p-type conductivity with field-effect ... Keywords. Organic semiconductor; field effect transistor; phthalocyanine; high mobility. ... The evaporation rate was kept at ...

  12. Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

    Dhifallah, I., E-mail: ines.dhifallah@gmail.co [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Daoudi, M.; Bardaoui, A. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Eljani, B. [Unite de recherche sur les Hetero-Epitaxie et Applications, Faculte des Sciences de Monastir (Tunisia); Ouerghi, A. [Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay 91 46a0, Marcoussis (France); Chtourou, R. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia)

    2011-05-15

    Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E{sub e-hh}) and electron-light-hole (E{sub e-lh}) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-{delta}-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-{delta}-doped samples, we have determined the internal electric field introduced by ionized Si-{delta}-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: {yields} Studying HEMTs structures with different silicon doping content. {yields} An increase of the electric field in the InAs layer with increasing Si content. {yields} The interband energy transitions in the HEMTs structures have been obtained from PR. {yields} Experimental and theoretical values of transitions energies were in good agreement.

  13. High-frequency hearing loss among mobile phone users.

    Velayutham, P; Govindasamy, Gopala Krishnan; Raman, R; Prepageran, N; Ng, K H

    2014-01-01

    The objective of this study is to assess high frequency hearing (above 8 kHz) loss among prolonged mobile phone users is a tertiary Referral Center. Prospective single blinded study. This is the first study that used high-frequency audiometry. The wide usage of mobile phone is so profound that we were unable to find enough non-users as a control group. Therefore we compared the non-dominant ear to the dominant ear using audiometric measurements. The study was a blinded study wherein the audiologist did not know which was the dominant ear. A total of 100 subjects were studied. Of the subjects studied 53% were males and 47% females. Mean age was 27. The left ear was dominant in 63%, 22% were dominant in the right ear and 15% did not have a preference. This study showed that there is significant loss in the dominant ear compared to the non-dominant ear (P mobile phone revealed high frequency hearing loss in the dominant ear (mobile phone used) compared to the non dominant ear.

  14. InAs nanowire formation on InP(001)

    Parry, H. J.; Ashwin, M. J.; Jones, T. S.

    2006-01-01

    The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands

  15. High mobility solution-processed hybrid light emitting transistors

    Walker, Bright; Kim, Jin Young; Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B.; Chae, Gil Jo; Cho, Shinuk; Seo, Jung Hwa

    2014-01-01

    We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm 2 /V s, current on/off ratios of >10 7 , and external quantum efficiency of 10 −2 % at 2100 cd/m 2 . These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective

  16. Filters for mobile radio from high Tc ceramic superconductors

    Peterson, G.E.; Wong, E.; Alford, N.McN.

    1990-01-01

    Mobile radio frequencies lie between 30 MHz and 1,000 MHz. This frequency range is ideal for ceramic high T c superconductors. We have designed Chebyshev, Butterworth and interdigital filters that can employ high T c superconductors in the form of rods, tubes and helices. In general, the performance of these filters at milliwatt power levels is excellent. We will describe fabrication of the superconductors and filter design

  17. High mobility ZnO nanowires for terahertz detection applications

    Liu, Huiqiang; Peng, Rufang; Chu, Shijin; Chu, Sheng

    2014-01-01

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  18. INFLUENCE OF LOW-ENERGY AR-SPUTTERING ON THE ELECTRONIC-PROPERTIES OF INAS-BASED QUANTUM-WELL STRUCTURES

    Magnee, P.H.C.; den Hartog, S.G.; Wees, B.J.van; Klapwijk, T.M; van de Graaf, W.; Borghs, G.

    1995-01-01

    The influence of low energy (80-500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An anneal at 180 degrees

  19. Mobile marketing for mobile games

    Vu, Giang

    2016-01-01

    Highly developed mobile technology and devices enable the rise of mobile game industry and mobile marketing. Hence mobile marketing for mobile game is an essential key for a mobile game success. Even though there are many articles on marketing for mobile games, there is a need of highly understanding mobile marketing strategies, how to launch a mobile campaign for a mobile game. Besides that, it is essential to understand the relationship between mobile advertising and users behaviours. There...

  20. Kinase detection with gallium nitride based high electron mobility transistors.

    Makowski, Matthew S; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena

    2013-07-01

    A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

  1. Ultimate response time of high electron mobility transistors

    Rudin, Sergey; Rupper, Greg; Shur, Michael

    2015-01-01

    We present theoretical studies of the response time of the two-dimensional gated electron gas to femtosecond pulses. Our hydrodynamic simulations show that the device response to a short pulse or a step-function signal is either smooth or oscillating time-decay at low and high mobility, μ, values, respectively. At small gate voltage swings, U 0  = U g  − U th , where U g is the gate voltage and U th is the threshold voltage, such that μU 0 /L < v s , where L is the channel length and v s is the effective electron saturation velocity, the decay time in the low mobility samples is on the order of L 2 /(μU 0 ), in agreement with the analytical drift model. However, the decay is preceded by a delay time on the order of L/s, where s is the plasma wave velocity. This delay is the ballistic transport signature in collision-dominated devices, which becomes important during very short time periods. In the high mobility devices, the period of the decaying oscillations is on the order of the plasma wave velocity transit time. Our analysis shows that short channel field effect transistors operating in the plasmonic regime can meet the requirements for applications as terahertz detectors, mixers, delay lines, and phase shifters in ultra high-speed wireless communication circuits

  2. Femtosecond upconverted photocurrent spectroscopy of InAs quantum nanostructures

    Yamada, Yasuhiro [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Tex, David M.; Kanemitsu, Yoshihiko, E-mail: kanemitu@scl.kyoto-u.ac.jp [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Japan Science and Technology Agency, CREST, Kyoto University, Uji, Kyoto 611-0011 (Japan); Kamiya, Itaru [Toyota Technological Institute, Nagoya, Aichi 468-8511 (Japan)

    2015-07-06

    The carrier upconversion dynamics in InAs quantum nanostructures are studied for intermediate-band solar-cell applications via ultrafast photoluminescence and photocurrent (PC) spectroscopy based on femtosecond excitation correlation (FEC) techniques. Strong upconverted PC-FEC signals are observed under resonant excitation of quantum well islands (QWIs), which are a few monolayer-thick InAs quantum nanostructures. The PC-FEC signal typically decays within a few hundred picoseconds at room temperature, which corresponds to the carrier lifetime in QWIs. The photoexcited electron and hole lifetimes in InAs QWIs are evaluated as functions of temperature and laser fluence. Our results provide solid evidence for electron–hole–hole Auger process, dominating the carrier upconversion in InAs QWIs at room temperature.

  3. Japanese high school students' usage of mobile phones while cycling.

    Ichikawa, Masao; Nakahara, Shinji

    2008-03-01

    To investigate the perception and actual use of mobile phones among Japanese high school students while riding their bicycles, and their experience of bicycle crash/near-crash. A questionnaire survey was carried out at high schools that were, at the time of the survey, commissioned by the National Agency for the Advancement of Sports and Health to conduct school safety research. In the survey, we found that mobile phone use while riding a bicycle was quite common among the students during their commute, but those who have a higher perception of danger in this practice, and those who perceived that this practice is prohibited, were less likely to engage in this practice. Male students and students commuting to school by bicycle only were more likely to have used phones while riding. There was a significant relationship between phone usage while riding a bicycle and the experience of bicycle crash/near-crash, although its causality was not established. Bicycle crash/near-crash experienced while using a phone was less prevalent among the students who had a higher perception of danger in phone usage while riding, students who perceived that this practice is prohibited, and students with a shorter travel time by bicycle during the commute. Since mobile phone use while riding a bicycle potentially increases crash risk among cyclists, student bicycle commuters should be made aware of this risk. Moreover, they should be informed that cyclists' phone usage while riding is prohibited according to the road traffic law.

  4. Mobile learning and high-lighting language education

    Vinther, Jane

    Mobile learning and high-profiling language education. The number of students learning a second or foreign language and participating in instruction in languages other than English has been in decline for some time. There seems to be such a general tendency across nations albeit for a variety...... of reasons idiosyncratic to the particular national conditions. This paper gives an account of a diversified national project designed to infuse foreign language learning classes in upper secondary schools in Denmark with renewed enthusiasm through systematically experimenting with the new media by taking...... advantage of the social side in their application. The aim has been to make language classes attractive and relevant and to highlight the attractiveness and fun in learning through web 2.0 and mobile units. The overall project was supported by the Danish ministry of education as well as the individual...

  5. Sows with high milk production had both a high feed intake and high body mobilization

    Strathe, A. V.; Bruun, T. S.; Hansen, C. F.

    2017-01-01

    Selection for increased litter size have generated hyper-prolific sows that nurses large litters, however limited knowledge is available regarding the connection between milk production, feed intake and body mobilization of these modern sows. The aim of the current study was to determine what...... be explained by a relatively higher proportion of their body reserves being mobilized compared with multiparous sows. The ADG of the litter was positively related by ADFI of the sows, litter size and BW loss and increasing the ADFI with 1 kg/day throughout lactation likely increased the ADG of the litter...... characterized sows with high milk production and nursing large litters, differences between sows of different parities and effects of lactational performance on next reproductive cycle. In total 565 sows (parity 1 to 4) were studied from 7 days before farrowing until weaning. On day 2 postpartum litters were...

  6. Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

    Lee, Jongkyong; Gang, Suhyun; Jo, Yongcheol; Kim, Jongmin; Woo, Hyeonseok; Han, Jaeseok; Kim, Hyungsang; Im, Hyunsik

    2014-01-01

    We have investigated the temperature dependence of ballistic mobility in a 100 nm-long InGaAs/InAlAs metamorphic high-electron-mobility transistor designed for millimeter-wavelength RF applications. To extract the temperature dependence of quasi-ballistic mobility, our experiment involves measurements of the effective mobility in the low-bias linear region of the transistor and of the collision-dominated Hall mobility using a gated Hall bar of the same epitaxial structure. The data measured from the experiment are consistent with that of modeled ballistic mobility based on ballistic transport theory. These results advance the understanding of ballistic transport in various transistors with a nano-scale channel length that is comparable to the carrier's mean free path in the channel.

  7. In situ surface and interface study of crystalline (3×1)-O on InAs

    Qin, Xiaoye, E-mail: xxq102020@utdallas.edu; Wallace, Robert M., E-mail: rmwallace@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Wang, Wei-E.; Rodder, Mark S. [Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, Texas 78754 (United States)

    2016-07-25

    The oxidation behavior of de-capped InAs (100) exposed to O{sub 2} gas at different temperatures is investigated in situ with high resolution of monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction. The oxide chemical states and structure change dramatically with the substrate temperature. A (3 × 1) crystalline oxide layer on InAs is generated in a temperature range of 290–330 °C with a coexistence of In{sub 2}O and As{sub 2}O{sub 3}. The stability of the crystalline oxide upon the atomic layer deposition (ALD) of HfO{sub 2} is studied as well. It is found that the generated (3 × 1) crystalline oxide is stable upon ALD HfO{sub 2} growth at 100 °C.

  8. Studies on the controlled growth of InAs nanostructures on scission surfaces

    Bauer, J.

    2006-01-01

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {110}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {110}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  9. Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

    Lin Chien-Hung

    2011-01-01

    Full Text Available Abstract In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states on photoluminescence excitation (PLE spectra of InAs quantum dots (QDs was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.

  10. Gravel Mobility in a High Sand Content Riverbed

    Haschenburger, J. K.

    2017-12-01

    In sand-gravel channels, sand may modify gravel transport by changing conditions of entrainment and promoting longer displacements or gravel may inhibit sand transport if concentrated into distinct deposits, which restrict sand supply with consequences for migrating bedform size or form. This study reports on gravel mobility in the lower San Antonio River, Texas, where gravel content in the bed material ranges from about 1% to more than 20%. Sediment transport observations were collected at three U.S. Geological Survey gauging stations by deploying a Helley-Smith sampler with a 0.2 mm mesh bag from which transport rates and mobile grain sizes were determined. The flow rates sampled translate into an annual exceedance expectation from 0.2% to 98%. Gravel transport rates are generally two orders of magnitude smaller than the rates of sand transport. However, the finest gravels are transported at rates on the same order of magnitude as the coarsest sands. At all sites, the 2 and 2.8 mm fractions are transported at the lowest flow rate sampled, suggesting mobility for at least 38% to as much as 98% of the year. Fractions as large as 8 mm are mobilized at flow rates that are expected between 25% and 53% of the year. The largest fractions captured in the sampling (16 to 32 mm) require flows closer to bankfull conditions that occur no more than 0.8% of the year. Results document that some gravel sizes can be frequently transported in low gradient riverbeds with high sand content.

  11. High mobility and high concentration Type-III heterojunction FET

    Tsu, R.; Fiddy, M. A.; Her, T.

    2018-02-01

    The PN junction was introduced in transistors by doping, resulting in high losses due to Coulomb scattering from the dopants. The MOSFET introduced carriers in the form of electrons and holes with an applied bias to the oxide barrier, resulting in carrier transfer without doping. This avoids high scattering losses and dominates the IC industries. With heterojunctions having valence-band maxima near and even above the conduction-band minimum in the formation of Type-III superlattices, very useful devices, introduced by Tsu, Sai-Halacz, and Esaki, soon followed. If the layer thicknesses are more than the carrier mean-free-path, incoherent scattering results in the formation of carrier transfer via diffusion instead of opening up new energy gaps. The exploitation of carriers without scattering represents a new and significant opportunity in what we call a Broken Gap Heterojunction FET.

  12. The presence of INA proteins on the surface of single cells of Pseudomonas syringae R10.79 isolated from rain

    Šantl-Temkiv, Tina; Ling, Meilee; Holm, Stine; Finster, Kai; Boesen, Thomas

    2016-04-01

    One of the important open questions in atmospheric ice nucleation is the impact of bioaerosols on the ice content of mix phase clouds (DeMott and Prenni 2010). Biogenic ice nuclei have a unique capacity of facilitating ice formation at temperatures between -1 and -10 °C. The model biogenic ice nuclei are produced by a few species of plant-surface bacteria, such as Pseudomonas syringae, that are commonly transported through the atmosphere. These bacterial species have highly specialized proteins, the so-called ice nucleation active (INA) proteins, which are exposed at the outer membrane surface of the cell where they promote ice particle formation. The mechanisms behind the onset of INA protein synthesis in single bacterial cells are not well understood. We performed a laboratory study in order to (i) investigate the presence of INA proteins on single bacterial cells and (ii) understand the conditions that induce INA protein production. We previously isolated an INA-positive strain of Pseudomonas syringae from rain samples collected in Denmark. Bacterial cells initiated ice nucleation activity at temperatures ≤-2°C and the cell fragments at temperatures ≤-8°C (Šantl-Temkiv et al 2015). We determined the amino-acid sequence of the INA protein and used the sequence to produce custom-made antibodies (GenScript, Germany). These antibodies were used to specifically stain and visualize the INA protein on the surfaces of single cells, which can then be quantified by a technique called flow cytometry. The synthesis of INA proteins by individual cells was followed during a batch growth experiment. An unusually high proportion of cells that were adapting to the new conditions prior to growth produced INA proteins (~4.4% of all cells). A smaller fraction of actively growing cells was carrying INA proteins (~1.2 % of all cells). The cells that stopped growing due to unfavorable conditions had the lowest fraction of cells carrying INA proteins (~0.5 % of all cells). To

  13. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka; Inagaki, Makoto; Yamaguchi, Masafumi

    2012-01-01

    We report the highest mobility values above 2000 cm 2 /Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  14. Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing

    Zhan, H.H.; Nötzel, R.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

    2003-01-01

    Self-assembled InAs quantum dots are grown at low temperature (LT) by molecular beam epitaxy (MBE) on GaAs substrates. The growth is in situ monitored by reflection high-energy electron diffraction, and ex situ evaluated by atomic force microscopy for the morphological properties, and by

  15. Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire

    Saldaña, J. C. Estrada; Žitko, R.; Cleuziou, J. P.

    2018-01-01

    We study the superconducting proximity effect in an InAs nanowire contacted by Ta-based superconducting electrodes. Using local bottom gates, we control the potential landscape along the nanowire, tuning its conductance to a quasi-ballistic regime. At high magnetic field ($B$), we observe...

  16. High-mobility ultrathin semiconducting films prepared by spin coating.

    Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

    2004-03-18

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  17. High-mobility ultrathin semiconducting films prepared by spin coating

    Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

    2004-03-01

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  18. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures

    Möller, M.; Oliveira, D. S.; Sahoo, P. K.; Cotta, M. A.; Iikawa, F.; Motisuke, P.; Molina-Sánchez, A.; de Lima, M. M., Jr.; García-Cristóbal, A.; Cantarero, A.

    2017-07-01

    InAs nanowires grown by vapor-liquid-solid (VLS) method are investigated by photoluminescence. We observe that the Fermi energy of all samples is reduced by ˜20 meV when the size of the Au nanoparticle used for catalysis is increased from 5 to 20 nm. Additional capping with a thin InP shell enhances the optical emission and does not affect the Fermi energy. The unexpected behavior of the Fermi energy is attributed to the differences in the residual donor (likely carbon) incorporation in the axial (low) and lateral (high incorporation) growth in the VLS and vapor-solid (VS) methods, respectively. The different impurity incorporation rate in these two regions leads to a core/shell InAs homostructure. In this case, the minority carriers (holes) diffuse to the core due to the built-in electric field created by the radial impurity distribution. As a result, the optical emission is dominated by the core region rather than by the more heavily doped InAs shell. Thus, the photoluminescence spectra and the Fermi energy become sensitive to the core diameter. These results are corroborated by a theoretical model using a self-consistent method to calculate the radial carrier distribution and Fermi energy for distinct diameters of Au nanoparticles.

  19. One-to-One Mobile Technology in High School Physics Classrooms: Understanding Its Use and Outcome

    Zhai, Xiaoming; Zhang, Meilan; Li, Min

    2018-01-01

    This study examined ways in which high school students used mobile devices in physics classrooms and after school, and the impact of in-class and after-school mobile technology use on their physics learning performance and interest. We collected data from 803 high school freshmen in China after they had used mobile devices for over five months. A…

  20. Thermoelectric transport properties of high mobility organic semiconductors

    Venkateshvaran, Deepak; Broch, Katharina; Warwick, Chris N.; Sirringhaus, Henning

    2016-09-01

    Transport in organic semiconductors has traditionally been investigated using measurements of the temperature and gate voltage dependent mobility of charge carriers within the channel of organic field-effect transistors (OFETs). In such measurements, the behavior of charge carrier mobility with temperature and gate voltage, studied together with carrier activation energies, provide a metric to quantify the extent of disorder within these van der Waals bonded materials. In addition to the mobility and activation energy, another potent but often-overlooked transport coefficient useful in understanding disorder is the Seebeck coefficient (also known as thermoelectric power). Fundamentally, the Seebeck coefficient represents the entropy per charge carrier in the solid state, and thus proves powerful in distinguishing materials in which charge carriers move freely from those where a high degree of disorder causes the induced carriers to remain trapped. This paper briefly covers the recent highlights in the field of organic thermoelectrics, showing how significant strides have been made both from an applied standpoint as well as from a viewpoint of fundamental thermoelectric transport physics. It shall be illustrated how thermoelectric transport parameters in organic semiconductors can be tuned over a significant range, and how this tunability facilitates an enhanced performance for heat-to-electricity conversion as well as quantifies energetic disorder and the nature of the density of states (DOS). The work of the authors shall be spotlighted in this context, illustrating how Seebeck coefficient measurements in the polymer indacenodithiophene-co-benzothiadiazole (IDTBT) known for its ultra-low degree of torsion within the polymer backbone, has a trend consistent with low disorder. 1 Finally, using examples of the small molecules C8-BTBT and C10-DNTT, it shall be discussed how the Seebeck coefficient can aid the estimation of the density and distribution of trap states

  1. Charge fluctuations in high-electron-mobility transistors: a review

    Green, F.

    1993-01-01

    The quasi-two-dimensional carrier population, free to move within a near-perfect crystalline matrix, is the key to remarkable improvements in signal gain, current density and quiet operation. Current-fluctuation effects are central to all of these properties. Some of these are easily understood within linear-response theory, but other fluctuation phenomena are less tractable. In particular, nonequilibrium noise poses significant theoretical challenges, both descriptive and predictive. This paper examines a few of the basic physical issues which motivate device-noise theory. The structure and operation of high-electron-mobility transistor are first reviewed. The recent nonlinear fluctuation theory of Stanton and Wilkins (1987) help to identify at least some of the complicated noise physics which can arise when carriers in GaAs-like conduction bands are subjected to high fields. Simple examples of fluctuation-dominated behaviour are discussed, with numerical illustrations. 20 refs., 9 figs

  2. Patterning of high mobility electron gases at complex oxide interfaces

    Trier, Felix; Prawiroatmodjo, G. E. D. K.; von Soosten, Merlin

    2015-01-01

    Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects...... of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually...... where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching...

  3. How Does School Mobility Impact Indicators of Academic Achievement for Highly Mobile Students?

    Tanner-McBrien, Laura

    2010-01-01

    Children who are homeless or in foster care change schools more often than their non-mobile peers. The impact of school mobility increases their risk of academic failure (Evans, 1996; Ingersoll, Scamman, & Eckerling, 1989; Mao, 1997, Mehana & Reynolds, 2003; Reynolds & Wolf, 1999). Laws enforcing the right of students to remain in…

  4. Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures

    Espinola, J L Casas; Dybic, M; Ostapenko, S; Torchynska, T V; Polupan, G

    2007-01-01

    Ground and multi excited state photoluminescence, as well as its temperature dependence, in InAs quantum dots embedded in symmetric In x Ga 1-x As/GaAs (x = 0.15) quantum wells (DWELL) have been investigated. The solution of the set of rate equations for exciton dynamics (relaxation into QWs or QDs and thermal escape) solved by us earlier is used for analysis the variety of thermal activation energies of photoluminescence thermal quenching for ground and multi excited states of InAs QDs. The obtained solutions were used at the discussion of the variety of activation energies of PL thermal quenching in InAs QDs. It is revealed three different regimes of thermally activated quenching of the QD PL intensity. These three regimes were attributed to thermal escape of excitons: i) from the high energy excited states of InAs QDs into the WL with follows exciton re-localization; ii) from the In x Ga 1-x As QWs into the GaAs barrier and iii) from the WL into the GaAs barrier with their subsequent nonradiative recombination in GaAs barrier

  5. Electrical spin injection into high mobility 2D systems.

    Oltscher, M; Ciorga, M; Utz, M; Schuh, D; Bougeard, D; Weiss, D

    2014-12-05

    We report on spin injection into a high mobility 2D electron system confined at an (Al,Ga)As/GaAs interface, using (Ga,Mn)As Esaki diode contacts as spin aligners. We measured a clear nonlocal spin valve signal, which varies nonmonotonically with the applied bias voltage. The magnitude of the signal cannot be described by the standard spin drift-diffusion model, because at maximum this would require the spin polarization of the injected current to be much larger than 100%, which is unphysical. A strong correlation of the spin signal with contact width and electron mean free path suggests that ballistic transport in the 2D region below ferromagnetic contacts should be taken into account to fully describe the results.

  6. A third generation mobile high energy radiography system

    Fry, D.A.; Valdez, J.E.; Johnson, C.S.; Kimerly, H.J.; Vananne, J.R.

    1997-01-01

    A third generation mobile high energy radiographic capability has been completed and put into service by the Los Alamos National Laboratory. The system includes a 6 MeV linac x-ray generator, Co-60 gamma source, all-terrain transportation, on-board power, real-time radiography (RTR), a control center, and a complete darkroom capability. The latest version includes upgraded and enhanced portability, flexibility, all-terrain operation, all-weather operation, and ease of use features learned from experience with the first and second generation systems. All systems were required to have the following characteristics; all-terrain, all-weather operation, self-powered, USAF airlift compatible, reliable, simple to setup, easy to operate, and all components two-person portable. The systems have met these characteristics to differing degrees, as is discussed in the following section, with the latest system being the most capable

  7. 20 CFR 668.860 - What cash management procedures apply to INA grant funds?

    2010-04-01

    ... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What cash management procedures apply to INA... Administrative Requirements § 668.860 What cash management procedures apply to INA grant funds? INA grantees must... implement the Cash Management Improvement Act, found at 31 CFR part 205, apply by law to most recipients of...

  8. Data dissemination in the wild: A testbed for high-mobility MANETs

    Vingelmann, Peter; Pedersen, Morten Videbæk; Heide, Janus

    2012-01-01

    This paper investigates the problem of efficient data dissemination in Mobile Ad hoc NETworks (MANETs) with high mobility. A testbed is presented; which provides a high degree of mobility in experiments. The testbed consists of 10 autonomous robots with mobile phones mounted on them. The mobile...... information, and the goal is to convey that information to all devices. A strategy is proposed that uses UDP broadcast transmissions and random linear network coding to facilitate the efficient exchange of information in the network. An application is introduced that implements this strategy on Nokia phones...

  9. Exploring the mobility of cryoconite on High-Arctic glaciers

    Irvine-Fynn, T. D.; Hodson, A. J.; Bridge, J. W.; Langford, H.; Anesio, A.; Ohlanders, N.; Newton, S.

    2010-12-01

    There has been a growing awareness of the significance of biologically active dust (cryoconite) on the energy balance of, and nutrient cycling at glacier surfaces. Moreover, researchers have estimated the mass of biological material released from glacier ice to downstream environments and ecosystems, including the melt-out of cells from emergent ice in the ablation area. However, the processes, rates and mechanisms of cryoconite mobility and transport have not been fully explored. For many smaller valley glaciers in the High-Arctic, the climate dictates only a thin (~ 1m) layer of ice at the glacier surface is at the melting point during the summer months. This surface ice is commonly characterized by an increased porosity in response to incident energy and hydraulic conditions, and has been termed the “weathering crust”. The presence of cryoconite, with its higher radiation absorption, exacerbates the weathering crust development. Thus, crucially, the transport of cryoconite is not confined to simply a ‘smooth’ ice surface, but rather also includes mobility in the near-surface ice matrix. Here, we present initial results from investigations of cryoconite transport at Midtre Lovénbreen and Longyearbreen, two north-facing valley glaciers in Svalbard (Norway). Using time-lapse imagery, we explore the transport rates of cryoconite on a glacier surface and consider the associations between mobility and meteorological conditions. Results suggest some disparity between micro-, local- and plot-scale observations of cryoconite transport: the differences imply controlling influences of cryoconite volume, ice surface topography and ice structure. While to examine the relative volumes of cryoconite exported from the glacier surface by supraglacial streams we employ flow cytometry, using SYBR-Green-II staining to identify the biological component of the suspended load. Preliminary comparisons between shallow (1m) ice cores and in-stream concentrations suggest

  10. High Thermoelectric Power Factor of High-Mobility 2D Electron Gas.

    Ohta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu

    2018-01-01

    Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower ( S ), high electrical conductivity (σ), and low thermal conductivity (κ). State-of-the-art nanostructuring techniques that significantly reduce κ have realized high-performance thermoelectric materials with a figure of merit ( ZT = S 2 ∙σ∙ T ∙κ -1 ) between 1.5 and 2. Although the power factor (PF = S 2 ∙σ) must also be enhanced to further improve ZT , the maximum PF remains near 1.5-4 mW m -1 K -2 due to the well-known trade-off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and σ of the high-mobility electron gas from -490 µV K -1 and ≈10 -1 S cm -1 to -90 µV K -1 and ≈10 4 S cm -1 , while maintaining a high carrier mobility (≈1500 cm 2 V -1 s -1 ). The maximized PF of the high-mobility electron gas is ≈9 mW m -1 K -2 , which is a two- to sixfold increase compared to state-of-the-art practical thermoelectric materials.

  11. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    Grabowski, Jan

    2010-01-01

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-β2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In 2/3 Ga 1/3 As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating α2/α2-m configuration. In contrast to the previous surface reconstructions, where structural strain is

  12. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    Grabowski, Jan

    2010-12-14

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-{beta}2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In{sub 2/3}Ga{sub 1/3}As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating {alpha}2/{alpha}2-m configuration. In contrast to the previous surface reconstructions, where

  13. Single-photon generation with InAs quantum dots

    Santori, Charles; Fattal, David; Vuckovic, Jelena; Solomon, Glenn S; Yamamoto, Yoshihisa

    2004-01-01

    Single-photon generation using InAs quantum dots in pillar microcavities is described. The effects on performance of the excitation wavelength and polarization, and the collection bandwidth and polarization, are studied in detail. The efficiency and photon state purity of these devices have been measured, and issues affecting these parameters are discussed. Prospects for improved devices are also discussed

  14. BEYOND THE WORK-LIFE BALANCE: FAMILY AND INTERNATIONAL MOBILITY OF THE HIGHLY SKILLED

    Núria Vergés Bosch

    2013-10-01

    Full Text Available International mobility of the highly skilled has become one of the cornerstones of development in the current knowledge society. Correspondingly, highly skilled personnel are impelled to move abroad in order to improve their competences and build influential professional networks. Mobility implies some advantages involving personal, social and family opportunities when movers experience handicaps in their country of origin. For movers, mobility becomes a new challenge beyond the work-family balance, particularly for women who usually take on the lion’s share of childcare and domestic tasks within the family. The literature exploring the gender dimension in relation to international mobility points to complex outcomes. Firstly, women are taking on a more active role in international mobility processes, even when they have family. Secondly, family and international mobility are interrelated both for men and for women, although family could become a hindrance, particularly for women. Thirdly, international mobility and women’s career development may interfere with family formation or modify traditional family values. Finally, families moving abroad constitute a challenge for public policy, since they present a new area of problems. We aim to analyse the relationship between international mobility and family based on in-depth interviews from a purposive sample of highly skilled personnel in science and technology. The results of our research suggest that international mobility of the highly skilled has effects on the family and vice versa; however, while international mobility and family are compatible, measures and policies to reconcile them are still insufficient.

  15. Dust mobilization by high-speed vapor flow under LOVA

    Matsuki, K.; Suzuki, S.; Ebara, S.; Yokomine, T.; Shimizu, A.

    2006-01-01

    In the safety analysis on the International Thermonuclear Experimental Reactor (ITER), the ingress of coolant (ICE) event and the loss of vacuum (LOVA) event are considered as one of the most serious accident. On the assumption of LOVA occurring after ICE, it is inferable that activated dusts are under the wet condition. Transport behavior of in-vessel activated dusts under the wet condition is not well understood in comparison with the dry case. In this study, we experimentally investigated the entrainment behavior of dust under LOVA after ICE. We measured dust entrainment by high-speed humid airflow with phase change. Graphite dusts and glass beads are used as substitutions for mobile inventory. The relations among the relative humidity, the entrainment of particles in the exhaust gas flow and the adhesion rate of dust particles on the pipe wall have been made clear, as has the distribution profile of dust deposition on the pipe wall. The entrainment ratio decreased as the relative humidity increased and increased as the initial pressure difference increased

  16. Making Mn substitutional impurities in InAs using a scanning tunneling microscope.

    Song, Young Jae; Erwin, Steven C; Rutter, Gregory M; First, Phillip N; Zhitenev, Nikolai B; Stroscio, Joseph A

    2009-12-01

    We describe in detail an atom-by-atom exchange manipulation technique using a scanning tunneling microscope probe. As-deposited Mn adatoms (Mn(ad)) are exchanged one-by-one with surface In atoms (In(su)) to create a Mn surface-substitutional (Mn(In)) and an exchanged In adatom (In(ad)) by an electron tunneling induced reaction Mn(ad) + In(su) --> Mn(In) + In(ad) on the InAs(110) surface. In combination with density-functional theory and high resolution scanning tunneling microscopy imaging, we have identified the reaction pathway for the Mn and In atom exchange.

  17. X-ray diffraction analysis of InAs nanowires

    Davydok, Anton

    2013-01-01

    Semiconductor nanowires have attracted great interest as building blocks for future electronic and optoelectronic devices. The variability of the growth process opens the opportunity to control and combine the various properties tailoring for specific application. It was shown that the electrical and optical characteristics of the nanowires are strongly connected with their structure. Despite intensive research in this field, the growth process is still not fully understood. In particular, extensive real structure investigations are required. Most of the reports dedicated on the structural researches are based on the results of scanning electron microscopy (SEM) or transmission electron microscopy (TEM). SEM provides an image of the surface with nanostructures and is mainly used to describe the morphology of the sample, but it does not bring information about the internal structure, phase composition and defect structure. At the same time, the internal structure can be examined by TEM down to atomic scale. TEM image of good quality are very expensive due to the efforts in sample preparation and in localisation of a single object. All these aspects make the statistical structural analysis difficult. In the present work, X-ray diffraction analysis has been applied for structural investigation of InAs nanowires grown by different techniques. Using various X-ray diffraction geometries, the nanowire systems were investigated in terms of the lattice parameters, phase composition, strains and displacement fields and stacking defects. In particular, realizing grazing incidence diffraction and controlling the penetration depth of X-ray beam, we characterized sample series grown by Au-assisted metal organic phase epitaxy on GaAs [111]B substrate with different growth time. According to the results of SEM and X-ray investigations, a model of the growth process has been proposed. A more detailed analysis was performed on InAs nanowires grown by molecular beam epitaxy (MBE) on

  18. High pH mobile phase effects on silica-based reversed-phase high-performance liquid chromatographic columns

    Kirkland, J.J.; Straten, van M.A.; Claessens, H.A.

    1995-01-01

    Aqueous mobile phases above pH 8 often cause premature column failure, limiting the utility of silica-based columns for applications requiring high pH. Previous studies suggest that covalently bound silane ligands are hydrolyzed and removed by high-pH mobile phases. However, we found that the

  19. Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

    Pearson, J.L.

    1999-03-01

    Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

  20. Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots

    Khatsevich, S.; Rich, D.H.; Kim, Eui-Tae; Madhukar, A.

    2005-01-01

    We have examined state filling and thermal activation of carriers in buried InAs self-assembled quantum dots (SAQDs) with excitation-dependent cathodoluminescence (CL) imaging and spectroscopy. The InAs SAQDs were formed during molecular-beam epitaxial growth of InAs on undoped planar GaAs (001). The intensities of the ground- and excited-state transitions were analyzed as a function of temperature and excitation density to study the thermal activation and reemission of carriers. The thermal activation energies associated with the thermal quenching of the luminescence were measured for ground- and excited-state transitions of the SAQDs, as a function of excitation density. By comparing these activation energies with the ground- and excited-state transition energies, we have considered various processes that describe the reemission of carriers. Thermal quenching of the intensity of the QD ground- and first excited-state transitions at low excitations in the ∼230-300-K temperature range is attributed to dissociation of excitons from the QD states into the InAs wetting layer. At high excitations, much lower activation energies of the ground and excited states are obtained, suggesting that thermal reemission of single holes from QD states into the GaAs matrix is responsible for the observed temperature dependence of the QD luminescence in the ∼230-300-K temperature range. The dependence of the CL intensity of the ground-and first excited-state transition on excitation density was shown to be linear at all temperatures at low-excitation density. This result can be understood by considering that carriers escape and are recaptured as excitons or correlated electron-hole pairs. At sufficiently high excitations, state-filling and spatial smearing effects are observed together with a sublinear dependence of the CL intensity on excitation. Successive filling of the ground and excited states in adjacent groups of QDs that possess different size distributions is assumed to

  1. Growth and characterization of InAs columnar quantum dots on GaAs substrate

    Li, L. H.; Patriarche, G.; Rossetti, M.; Fiore, A.

    2007-01-01

    The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by molecular beam epitaxy was investigated. The CQDs were formed by depositing a 1.8 monolayer (ML) InAs seed dot layer and a short period GaAs/InAs superlattice (SL). It was found that the growth of the CQDs is very sensitive to growth interruption (GI) and growth temperature. Both longer GI and higher growth temperature impact the size dispersion of the CQDs, which causes the broadening of photoluminescence (PL) spectrum and the presence of the additional PL peak tails. By properly choosing the GI and the growth temperature, CQDs including GaAs (3 ML)/InAs (0.62 ML) SL with period number up to 35 without plastic relaxation were grown. The corresponding equivalent thickness of the SL is 41 nm which is two times higher than the theoretical critical thickness of the strained InGaAs layer with the same average In composition of 16%. The increase of the critical thickness is partially associated with the formation of the CQDs. Based on a five-stack CQD active region, laser diodes emitting around 1120 nm at room temperature were demonstrated, indicating a high material quality. CQDs with nearly isotropic cross section (20 nmx20 nm dimensions) were formed by depositing a 16-period GaAs (3 ML)/InAs (0.62 ML) SL on an InAs seed dot layer, indicating the feasibility of artificial shape engineering of QDs. Such a structure is expected to be very promising for polarization insensitive device applications, such as semiconductor optical amplifiers

  2. A compact high resolution electrospray ionization ion mobility spectrometer.

    Reinecke, T; Kirk, A T; Ahrens, A; Raddatz, C-R; Thoben, C; Zimmermann, S

    2016-04-01

    Electrospray is a commonly used ionization method for the analysis of liquids. An electrospray is a dispersed nebular of charged droplets produced under the influence of a strong electrical field. Subsequently, ions are produced in a complex process initiated by evaporation of neutral solvent molecules from these droplets. We coupled an electrospray ionization source to our previously described high resolution ion mobility spectrometer with 75 mm drift tube length and a drift voltage of 5 kV. When using a tritium source for chemical gas phase ionization, a resolving power of R=100 was reported for this setup. We replaced the tritium source and the field switching shutter by an electrospray needle, a desolvation region with variable length and a three-grid shutter for injecting ions into the drift region. Preliminary measurements with tetraalkylammonium halides show that the current configuration with the electrospray ionization source maintains the resolving power of R=100. In this work, we present the characterization of our setup. One major advantage of our setup is that the desolvation region can be heated separately from the drift region so that the temperature in the drift region stays at room temperature even up to desolvation region temperatures of 100 °C. We perform parametric studies for the investigation of the influence of temperature on solvent evaporation with different ratios of water and methanol in the solvent for different analyte substances. Furthermore, the setup is operated in negative mode and spectra of bentazon with different solvents are presented. Copyright © 2015 Elsevier B.V. All rights reserved.

  3. Stimulated Emission from InAs (GaAs Monolayers Stacks Embedded in Al0.33Ga0.67As Ective Region

    Dusan Pudis

    2002-01-01

    Full Text Available Our study is focused on the optical and electronic properties of InAs (GaAs monolayers embedded in Al0.33GA0.67As barrier layers investigated by temperature dependencies of electroluminescence spectra. The experimental results obtained from low temperature electroluminescence measurements of InAs (GaAs/Al0.33GA0.67As revealed the excellent emission spectra in the visib le range 630-690 nm. The stimulated emission from these structures across their cleavage planes has been observed at low  temperatures what is highly interesting for potential device applications.

  4. High Speed Mobility Through On-Demand Aviation

    Moore, Mark D.; Goodrich, Ken; Viken, Jeff; Smith, Jeremy; Fredericks, Bill; Trani, Toni; Barraclough, Jonathan; German, Brian; Patterson, Michael

    2013-01-01

    automobiles. ?? Community Noise: Hub and smaller GA airports are facing increasing noise restrictions, and while commercial airliners have dramatically decreased their community noise footprint over the past 30 years, GA aircraft noise has essentially remained same, and moreover, is located in closer proximity to neighborhoods and businesses. ?? Operating Costs: GA operating costs have risen dramatically due to average fuel costs of over $6 per gallon, which has constrained the market over the past decade and resulted in more than 50% lower sales and 35% less yearly operations. Infusion of autonomy and electric propulsion technologies can accomplish not only a transformation of the GA market, but also provide a technology enablement bridge for both larger aircraft and the emerging civil Unmanned Aerial Systems (UAS) markets. The NASA Advanced General Aviation Transport Experiments (AGATE) project successfully used a similar approach to enable the introduction of primary composite structures and flat panel displays in the 1990s, establishing both the technology and certification standardization to permit quick adoption through partnerships with industry, academia, and the Federal Aviation Administration (FAA). Regional and airliner markets are experiencing constant pressure to achieve decreasing levels of community emissions and noise, while lowering operating costs and improving safety. But to what degree can these new technology frontiers impact aircraft safety, the environment, operations, cost, and performance? Are the benefits transformational enough to fundamentally alter aircraft competiveness and productivity to permit much greater aviation use for high speed and On-Demand Mobility (ODM)? These questions were asked in a Zip aviation system study named after the Zip Car, an emerging car-sharing business model. Zip Aviation investigates the potential to enable new emergent markets for aviation that offer "more flexibility than the existing transportation solutions

  5. High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

    Hou, Zhipeng; Wang, Wenhong; Xu, Guizhou; Zhang, Xiaoming; Wei, Zhiyang; Shen, Shipeng; Liu, Enke; Yao, Yuan; Chai, Yisheng; Sun, Young; Xi, Xuekui; Wang, Wenquan; Liu, Zhongyuan; Wu, Guangheng; Zhang, Xixiang

    2015-01-01

    Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole

  6. Formation of anodic layers on InAs (111)III. Study of the chemical composition

    Valisheva, N. A., E-mail: valisheva@thermo.isp.nsc.ru; Tereshchenko, O. E. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Prosvirin, I. P.; Kalinkin, A. V. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation); Goljashov, V. A. [Novosibirsk State University (Russian Federation); Levtzova, T. A. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Bukhtiyarov, V. I. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

    2012-04-15

    The chemical composition of {approx}20-nm-thick anodic layers grown on InAs (111)III in alkaline and acid electrolytes containing or not containing NH{sub 4}F is studied by X-ray photoelectron spectroscopy. It is shown that the composition of fluorinated layers is controlled by the relation between the concentrations of fluorine and hydroxide ions in the electrolyte and by diffusion processes in the growing layer. Fluorine accumulates at the (anodic layer)/InAs interface. Oxidation of InAs in an acid electrolyte with a low oxygen content and a high NH{sub 4}F content brings about the formation of anodic layers with a high content of fluorine and elemental arsenic and the formation of an oxygen-free InF{sub x}/InAs interface. Fluorinated layers grown in an alkaline electrolyte with a high content of O{sup 2-} and/or OH{sup -} groups contain approximately three times less fluorine and consist of indium and arsenic oxyfluorides. No distinction between the compositions of the layers grown in both types of fluorine-free electrolytes is established.

  7. Past and Present Development of INA's Liberalisation and Privatisation

    Lesic, A.; Stimac, B.

    2001-01-01

    The paper deals with the historical development aspects of the Croatian oil and gas industry INA. It describes the period from the very start of oil and gas production to the data of establishment of the Croatian state and afterwards. Some important milestones and political and economic events that impacted the development of the Croatian oil industry are described and commented, including changes toward liberalisation and privatisation of the oil and gas sector. The paper emphasises the role of INA in the Croatian economy and proposes some solutions for the liberalisation process and privatisation of the company that could prevent undesirable effects of privatisation and protect the interests of Croatia in the energy sector which is one of the main sectors of economy having influence on other production and service sectors and their competitiveness.(author)

  8. INA's Preparations for Liberalised Energy Market and Privatisation

    Dragicevic, T.; Kolundzic, S.

    2001-01-01

    Before opening of the market, energy entities must carry out numerous preparations in order to be ready for challenges of a competitive environment. Some preparations refer to legal and organisational issues, but many of them encompass reengineering of business processes, cost reduction schemes and various improvement measures aimed at maintenance or acquisition of a competitive advantage. INA is actively pursuing some of the above measures, but now, by the end of 2001, we also have to deal with preparations for privatisation. These two processes have some important common elements, competitiveness being certainly one of them. INA must work toward improving its competitive strength in the gas sector, in refining, in marketing of oil products, but also in various supporting activities. However, there are constraints that we have to observe, mainly related to social issues.(author)

  9. Two-color single-photon emission from InAs quantum dots: toward logic information management using quantum light.

    Rivas, David; Muñoz-Matutano, Guillermo; Canet-Ferrer, Josep; García-Calzada, Raúl; Trevisi, Giovanna; Seravalli, Luca; Frigeri, Paola; Martínez-Pastor, Juan P

    2014-02-12

    In this work, we propose the use of the Hanbury-Brown and Twiss interferometric technique and a switchable two-color excitation method for evaluating the exciton and noncorrelated electron-hole dynamics associated with single photon emission from indium arsenide (InAs) self-assembled quantum dots (QDs). Using a microstate master equation model we demonstrate that our single QDs are described by nonlinear exciton dynamics. The simultaneous detection of two-color, single photon emission from InAs QDs using these nonlinear dynamics was used to design a NOT AND logic transference function. This computational functionality combines the advantages of working with light/photons as input/output device parameters (all-optical system) and that of a nanodevice (QD size of ∼ 20 nm) while also providing high optical sensitivity (ultralow optical power operational requirements). These system features represent an important and interesting step toward the development of new prototypes for the incoming quantum information technologies.

  10. Atomic structures of a monolayer of AlAs, GaAs, and InAs on Si(111)

    Lee, Geunjung; Yoon, Younggui

    2010-01-01

    We study atomic structures of a monolayer of AlAs, GaAs, and InAs on a Si(111) substrate from first-principles. The surface with the stacking sequence of ...SiSiMAsSiAs is energetically more stable than the surface with the stacking sequence of ...SiSiSiAsMAs, where M is Al, Ga, or In. The atomic structure of the three top layers of the low-energy surfaces are quite robust, irrespective of M, and the atomic structure of the AlAsSiAs terminated surface and that of the GaAsSiAs terminated surface are very similar. For the high-energy AsMAs terminated surfaces, the broken local tetrahedral symmetry plays an important role in the atomic structures. The calculated atomic structures of InAs on the Si(111) substrate depart most from the structure of crystalline Si.

  11. Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

    Shweky, Itzhak; Aharoni, Assaf; Mokari, Taleb; Rothenberg, Eli; Nadler, Moshe; Popov, Inna; Banin, Uri

    2006-01-01

    A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence

  12. Hold the Phone! High School Students' Perceptions of Mobile Phone Integration in the Classroom

    Thomas, Kevin; Muñoz, Marco A.

    2016-01-01

    This study examined the survey responses of 628 high school students in a large urban school district to determine their perceptions of mobile phone use in the classroom. Findings indicated that the majority of students (90.7%) were using a variety of mobile phone features for school-related work. Student support for instructional uses of phones,…

  13. Mobilities of slow electrons in low- and high-pressure gases and liquids

    Christophorou, L.G.

    1975-01-01

    Mobilities of slow (thermal and epithermal) electrons in low- (less than or approximately 500 Torr) and high- (approximately 500 to approximately 34,111 Torr) pressure gases are discussed and are related to the molecular structure and to the mobilities of thermal electrons in liquid media

  14. The design of a linear L-band high power amplifier for mobile communication satellites

    Whittaker, N.; Brassard, G.; Li, E.; Goux, P.

    1990-01-01

    A linear L-band solid state high power amplifier designed for the space segment of the Mobile Satellite (MSAT) mobile communication system is described. The amplifier is capable of producing 35 watts of RF power with multitone signal at an efficiency of 25 percent and with intermodulation products better than 16 dB below carrier.

  15. Hall mobility of free charge carriers in highly compensated p-Germanium

    Gavrilyuk, V.Yi.; Kirnas, Yi.G.; Balakyin, V.D.

    2000-01-01

    Hall mobility of free charge carriers in initial detectors Ge (Ga) is studied. It is established that an increase in the compensation factor results in the enlargement of Hall mobility in germanium highly compensated by introduction of Li ions during their drift in an electrical field

  16. Reconstruction of an InAs nanowire using geometric tomography

    Pennington, Robert S.; König, Stefan; Alpers, Andreas

    Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality....... When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize....

  17. High-Speed Mobile Communications in Hostile Environments

    AUTHOR|(SzGeCERN)739920; Sierra, Rodrigo; Chapron, Frederic; CERN. Geneva. IT Department

    2015-01-01

    With the inexorable increase in the use of mobile devices, wireless connectivity is expected by users anywhere, anytime. In general, this requirement is addressed in office buildings or public locations through the use of Wi-Fi technology but Wi-Fi is not well adapted for use in large experiment halls and complex underground environments, especially those where radiation exposure is an issue, such as the LHC tunnel and experimental caverns. 4G/LTE technology, however, looks to be well adapted to addressing mobility needs in such areas. We report here the studies CERN has undertaken on the use of 4G/LTE in the LHC tunnel, presenting results on the data throughput that can be achieved and discussing issues such as the provision of a consistent user experience.

  18. High available and fault tolerant mobile communications infrastructure

    Beiroumi, Mohammad Zib

    2006-01-01

    using rollback or replication techniques inapplicable. This dissertation presents a novel failure recovery approach based on a behavioral model of the communication protocols. The new recovery method is able to deal with software and hardware faults and is particularly suitable for mobile communications...... as it is the case for many recovery techniques. In addition, the method does not require any modification to mobile clients. The Communicating Extended Finite State Machine (CEFSM) is used to model the behavior of the infrastructure applications. The model based recovery scheme is integrated in the application...... and uses the client/server model to save the application state information during failure-free execution on a stable storage and retrieve them when needed during recovery. When and what information to be saved/retrieved is determined by the behavioral model of the application. To practically evaluate...

  19. 22 CFR 40.68 - Aliens subject to INA 222(g).

    2010-04-01

    ... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

  20. Komunikační mix Svatebního salonu INA

    Rybníčková, Michala

    2015-01-01

    Rybníčková, M. Marketing mix for Wedding Boutique INA. Bachelor thesis, Brno: Mendel university in Brno, 2015 This Bechelor thesis focuses on the marketing mix for the company Wedding Boutique INA. Survey results are used to evaluate the effectiveness of marketing tools currently used by INA. Furthermore, the results are used to recommend improvements to the marketing mix. Thesis also includes calculation of costs and scheduling for the year 2015.

  1. Hierarchical micro-mobility management in high-speed multihop access networks

    TANG Bi-hua; MA Xiao-lei; LIU Yuan-an; GAO Jin-chun

    2006-01-01

    This article integrates the hierarchical micro-mobility management and the high-speed multihop access networks (HMAN), to accomplish the smooth handover between different access routers. The proposed soft handover scheme in the high-speed HMAN can solve the micro-mobility management problem in the access network. This article also proposes the hybrid access router (AR) advertisement scheme and AR selection algorithm, which uses the time delay and stable route to the AR as the gateway selection parameters. By simulation, the proposed micro-mobility management scheme can achieve high packet delivery fraction and improve the lifetime of network.

  2. Investigation of Doppler Effects on high mobility OFDM-MIMO systems with the support of High Altitude Platforms (HAPs)

    Mohammed, H. A.; Sibley, M. J. N.; Mather, P. J.

    2012-05-01

    The merging of Orthogonal Frequency Division Multiplexing (OFDM) with Multiple-input multiple-output (MIMO) is a promising mobile air interface solution for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. This paper details the design of a highly robust and efficient OFDM-MIMO system to support permanent accessibility and higher data rates to users moving at high speeds, such as users travelling on trains. It has high relevance for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. The paper begins with a comprehensive literature review focused on both technologies. This is followed by the modelling of the OFDM-MIMO physical layer based on Simulink/Matlab that takes into consideration high vehicular mobility. Then the entire system is simulated and analysed under different encoding and channel estimation algorithms. The use of High Altitude Platform system (HAPs) technology is considered and analysed.

  3. Investigation of Doppler Effects on high mobility OFDM-MIMO systems with the support of High Altitude Platforms (HAPs)

    Mohammed, H A; Sibley, M J N; Mather, P J

    2012-01-01

    The merging of Orthogonal Frequency Division Multiplexing (OFDM) with Multiple-input multiple-output (MIMO) is a promising mobile air interface solution for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. This paper details the design of a highly robust and efficient OFDM-MIMO system to support permanent accessibility and higher data rates to users moving at high speeds, such as users travelling on trains. It has high relevance for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. The paper begins with a comprehensive literature review focused on both technologies. This is followed by the modelling of the OFDM-MIMO physical layer based on Simulink/Matlab that takes into consideration high vehicular mobility. Then the entire system is simulated and analysed under different encoding and channel estimation algorithms. The use of High Altitude Platform system (HAPs) technology is considered and analysed.

  4. Ultra high hole mobilities in a pure strained Ge quantum well

    Mironov, O.A.; Hassan, A.H.A.; Morris, R.J.H.; Dobbie, A.; Uhlarz, M.; Chrastina, D.; Hague, J.P.; Kiatgamolchai, S.; Beanland, R.; Gabani, S.; Berkutov, I.B.; Helm, M.; Drachenko, O.; Myronov, M.; Leadley, D.R.

    2014-01-01

    Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were − 14 T < B < + 14 T and 1.5 K < T < 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s was determined for a sheet density (p s ) 9.8 × 10 10 cm −2 (by ME-MSA) and (3.9 ± 0.2) × 10 3 cm 2 /V s for a sheet density (p s ) 5.9 × 10 10 cm −2 (by BAMS). - Highlights: • Pure strained Ge channel grown by reduced pressure chemical vapor deposition • Maximum entropy-mobility spectrum analysis • Bryan's algorithm mobility spectrum analysis • High room temperature hole drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s • Extremely high hole mobility of 1.1 × 10 6 cm 2 /V s at 12 K

  5. Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

    Choi, Ji Eun; Yoo, Jinkyoung; Lee, Donghwa; Hong, Young Joon; Fukui, Takashi

    2018-04-01

    This study demonstrates the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. The WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds.

  6. Molecular dynamics growth modeling of InAs1-xSbx-based type-II superlattice

    Ciani, Anthony J.; Grein, Christoph H.; Irick, Barry; Miao, Maosheng; Kioussis, Nicholas

    2017-09-01

    Type-II strained-layer superlattices (T2SL) based on InAs1-xSbx are a promising photovoltaic detector material technology for thermal imaging; however, Shockley-Read-Hall recombination and generation rates are still too high for thermal imagers based on InAs1-xSbx T2SL to reach their ideal performance. Molecular dynamics simulations using the Stillinger-Weber (SW) empirical potentials are a useful tool to study the growth of tetrahedral coordinated crystals and the nonequilibrium formation of defects within them, including the long-range effects of strain. SW potentials for the possible atomic interactions among {Ga, In, As, Sb} were developed by fitting to ab initio calculations of elastically distorted zinc blende and diamond unit cells. The SW potentials were tested against experimental observations of molecular beam epitaxial (MBE) growth and then used to simulate the MBE growth of InAs/InAs0.5Sb0.5 T2SL on GaSb substrates over a range of processes parameters. The simulations showed and helped to explain Sb cross-incorporation into the InAs T2SL layers, Sb segregation within the InAsSb layers, and identified medium-range defect clusters involving interstitials and their induction of interstitial-vacancy pairs. Defect formation was also found to be affected by growth temperature and flux stoichiometry.

  7. Intrinsic quantum dots in InAs nanowires

    Weis, Karl Martin Darius

    2013-01-01

    This work deals with InAs nanowire field effect transistors in back gate configuration. In such devices, quantum dots can form at low temperatures in the order of magnitude of a few Kelvin. These dots are henceforth referred to as intrinsic as they are not intentionally defined by electrodes. For the interpretation of their stability diagrams, a thorough knowledge of the structure and transport properties of the nanowires is required. Therefore, first of all, the influence of growth method and doping on the transport properties is studied at room temperature. The wires are grown by two types of metal-organic vapour phase epitaxy: a selective-area (SA-MOVPE) and an Au-catalyzed vapour-liquid-solid method (VLS-MOVPE). Transport data shows that the background doping of VLS-MOVPE wires is higher than for SA-MOVPE wires, but the variability of the transport properties is lower. The polytypism of the SA-MOVPE wires (they are composed of wurtzite and zinc blende segments) is a possible explanation for the second observation. Furthermore, it is shown that the measured transport properties significantly depend on the dielectric environment of the nanowires and on the way the electrical measurements are done (two- or four-terminal configuration). The conductivity is tunable via doping and the gate voltage. Conductivity measurements in the temperature range from 10 K to 300 K show that different transport regimes can occur (partially metallic behaviour for sufficiently high conductivity, otherwise purely semiconducting behaviour). This is attributed to different positions of the Fermi level and thus, a different effect of potential fluctuations. If conductivity and temperature are sufficiently low, the onset of Coulomb blockade is observed for semiconducting samples. It is even possible to tune the very same sample to different regimes via the gate voltage. The semiconducting behaviour observed in many samples contradicts the Thomas-Fermi theory. This is attributed to the

  8. The 2007 click it or ticket high-visibility seat belt mobilization : traffic tech.

    2010-09-01

    In May 2007 the National Highway Traffic Safety Administration : sponsored the fifth national Click It or Ticket (CIOT) : high-visibility seat belt enforcement mobilization, which followed : the CIOT program model of earned and paid media : publicizi...

  9. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    Holmes, Kenneth

    2002-01-01

    Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

  10. Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

    Kanimozhi, Catherine K.; Yaacobi-Gross, Nir; Chou, Kang Wei; Amassian, Aram; Anthopoulos, Thomas D.; Patil, Satish P.

    2012-01-01

    In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a

  11. High Precision GNSS Guidance for Field Mobile Robots

    Ladislav Jurišica

    2012-11-01

    Full Text Available In this paper, we discuss GNSS (Global Navigation Satellite System guidance for field mobile robots. Several GNSS systems and receivers, as well as multiple measurement methods and principles of GNSS systems are examined. We focus mainly on sources of errors and investigate diverse approaches for precise measuring and effective use of GNSS systems for real-time robot localization. The main body of the article compares two GNSS receivers and their measurement methods. We design, implement and evaluate several mathematical methods for precise robot localization.

  12. Thermal Investigation of Three-Dimensional GaN-on-SiC High Electron Mobility Transistors

    2017-07-01

    University of L’Aquila, (2011). 23 Rao, H. & Bosman, G. Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors. Solid...AFRL-RY-WP-TR-2017-0143 THERMAL INVESTIGATION OF THREE- DIMENSIONAL GaN-on-SiC HIGH ELECTRON MOBILITY TRANSISTORS Qing Hao The University of Arizona...clarification memorandum dated 16 Jan 09. This report is available to the general public, including foreign nationals. Copies may be obtained from the

  13. Interaction of a non-histone chromatin protein (high-mobility group protein 2) with DNA

    Goodwin, G.H.; Shooter, K.V.; Johns, E.W.

    1975-01-01

    The interaction with DNA of the calf thymus chromatin non-histone protein termed the high-mobility group protein 2 has been studied by sedimentation analysis in the ultracentrifuge and by measuring the binding of the 125 I-labelled protein to DNA. The results have been compared with those obtained previously by us [Eur. J. Biochem. (1974) 47, 263-270] for the interaction of high-mobility group protein 1 with DNA. Although the binding parameters are similar for these two proteins, high-mobility group protein 2 differs from high-mobility group protein 1 in that the former appears to change the shape of the DNA to a more compact form. The molecular weight of high-mobility group protein 2 has been determined by equilibrium sedimentation and a mean value of 26,000 was obtained. A low level of nuclease activity detected in one preparation of high-mobility group protein 2 has been investigated. (orig.) [de

  14. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  15. [Mobile-phone e-mail use, social networks, and loneliness among Japanese high school students].

    Ogata, Yasuko; Izumi, Yukiko; Kitaike, Tadashi

    2006-07-01

    The purposes of this study were to assess the loneliness of Japanese high school students who own and use a mobile phone, to clarify the relationships between students' loneliness and their social network and frequency of use of e-mail feature, and to demonstrate relationships with a student's social network and recognition of the benefits and drawbacks of mobile phone use. The participants were 227 students from two classes in each grade of a high school in the Kanto region of Japan. Participants answered a questionnaire covering the UCLA Loneliness Scale as well as questions pertaining to the circumstances of use of their mobile phones, their social networks (e.g., number of friends), and their perceptions of the benefits and drawbacks of mobile phone use. The questionnaires of students owning a mobile phone were analyzed. Total scores for the UCLA Loneliness Scale were calculated, and factor analysis was performed for the benefits and drawbacks. A total of 220 questionnaires were returned, for which 94.1 percent of respondents owned a mobile phone. The percentages of male and female respondents were 58% and 42%. Chronbach's alpha for the UCLA Loneliness Scale (total score) was 0.87, a result similar to previous studies with high school and university students. Factor analysis revealed five factors associated with the benefits and drawbacks of mobile phone use. Multiple-regression analysis showed that 42.9% of the variance in "frequency of e-mail use" was explained by grade level, frequency of mobile phone use, and two of the five factors from the benefits and drawbacks ("difficulty of communication," and "possible sleep loss due to nighttime e-mailing"). Stepwise multiple-regression analysis revealed that 24.4% of the variance in UCLA Loneliness Score was explained by gender, the frequency of e-mail use, the number of friends and the presence/absence of a girlfriend or boyfriend. Presence of an active social network and frequent e-mailing by mobile phone reduced

  16. The ion mobility spectrometer for high explosive vapor detection

    Cohen, M.J.; Stimac, R.M.; Wernlund, R.F.

    1984-01-01

    The Phemto-Chem /SUP R/ Model 100 Ion Mobility Spectrometer (IMS) operates in air and measures a number of explosive vapors at levels as low as partsper-trillion in seconds. The theory and operation of this instrument is discussed. The IMS inhales the vapor sample in a current of air and generates characteristic ions which are separated by time-of -ion drift in the atmospheric pressure gas. Quantitative results, using a dilution tunnel and standard signal generator with TNT, nitroglycerine, ethylene glycol dinitrate, cyclohexanone, methylamine, octafluoronaphthalene and hexafluorobenzene, are given. Rapid sample treatment with sample concentrations, microprocessor signal readout and chemical identification, offer a realistic opportunity of rapid explosive vapor detection at levels down to 10 -14 parts by volume in air

  17. Ionization of water clusters by fast Highly Charged Ions: Stability, fragmentation, energetics and charge mobility

    Legendre, S; Maisonny, R; Capron, M; Bernigaud, V; Cassimi, A; Gervais, B; Grandin, J-P; Huber, B A; Manil, B; Rousseau, P; Tarisien, M; Adoui, L; Lopez-Tarifa, P; AlcamI, M; MartIn, F; Politis, M-F; Penhoat, M A Herve du; Vuilleumier, R; Gaigeot, M-P; Tavernelli, I

    2009-01-01

    We study dissociative ionization of water clusters by impact of fast Ni ions. Cold Target Recoil Ion Momentum Spectroscopy (COLTRIMS) is used to obtain information about stability, energetics and charge mobility of the ionized clusters. An unusual stability of the (H 2 O) 4 H ''+ ion is observed, which could be the signature of the so called ''Eigen'' structure in gas phase water clusters. High charge mobility, responsible for the formation of protonated water clusters that dominate the mass spectrum, is evidenced. These results are supported by CPMD and TDDFT simulations, which also reveal the mechanisms of such mobility.

  18. 20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

    2010-04-01

    ... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees must document in their Two Year Plan that a system is in place to afford all members of the eligible population...

  19. Ag-catalyzed InAs nanowires grown on transferable graphite flakes

    Meyer-Holdt, Jakob; Kanne, Thomas; Sestoft, Joachim E.

    2016-01-01

    on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro...

  20. 20 CFR 668.710 - What planning documents must an INA grantee submit?

    2010-04-01

    ... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What planning documents must an INA grantee... Planning/Funding Process § 668.710 What planning documents must an INA grantee submit? Each grantee... participant services and expenditures covering the two-year planning cycle. We will, in consultation with the...

  1. A soft lithographic approach to fabricate InAs nanowire field-effect transistors

    Madsen, Morten; Lee, S. H.; Shin, S.-H.

    2018-01-01

    -down approach and an epitaxial layer transfer process, using MBE-grown ultrathin InAs as a source wafer. The width of the InAs nanowires was controlled using solvent-assisted nanoscale embossing (SANE), descumming, and etching processes. By optimizing these processes, NWs with a width less than 50 nm were...

  2. Upotreba začina u proizvodnji tradicionalnih sireva

    Josipović, Renata; Markov, Ksenija; Frece, Jadranka; Stanzer, Damir; Cvitković, Ante; Mrvčić, Jasna

    2016-01-01

    Sir je visoko cijenjeni mliječni proizvod u mnogim zemljama svijeta, a posebna pažnja pridaje se tradicionalnim sirevima, koji nisu samo hrana već i dio kulture i obilježja neke zemlje. Zahvaljujući zemljopisnom položaju i klimatsko-vegetacijskoj raznolikosti Republike Hrvatske, u pojedinim regijama razvijena je proizvodnja različitih tradicionalnih sireva uz upotrebu začina. Kod proizvodnje sireva sa začinima, začini se dodaju ili u sir koji se potom oblikuje, ili se sir omata lišćem začinsk...

  3. Nonlinear refraction at the absorption edge in InAs.

    Poole, C D; Garmire, E

    1984-08-01

    The results of measurements of nonlinear refraction at the absorption edge in InAs between 68 and 90 K taken with an HF laser are compared with those of a band-gap resonant model in which the contribution of the light-hole band is included and found to account for more than 40% of the observed nonlinear refraction. A generalized expression for the nonlinear index is derived by using the complete Fermi-Dirac distribution function. Good agreement between theory and experiment is obtained, with no free parameters.

  4. Elastic properties and electron transport in InAs nanowires

    Migunov, Vadim

    2013-02-22

    The electron transport and elastic properties of InAs nanowires grown by chemical vapor deposition on InAs (001) substrate were studied experimentally, in-situ in a transmission electron microscope (TEM). A TEM holder allowing the measurement of a nanoforce while simultaneous imaging nanowire bending was used. Diffraction images from local areas of the wire were recorded to correlate elastic properties with the atomic structure of the nanowires. Another TEM holder allowing the application of electrical bias between the nanowire and an apex of a metallic needle while simultaneous imaging the nanowire in TEM or performing electron holography was used to detect mechanical vibrations in mechanical study or holographical observation of the nanowire inner potential in the electron transport studies. The combination of the scanning probe methods with TEM allows to correlate the measured electric and elastic properties of the nanowires with direct identification of their atomic structure. It was found that the nanowires have different atomic structures and different stacking fault defect densities that impacts critically on the elastic properties and electric transport. The unique methods, that were applied in this work, allowed to obtain dependencies of resistivity and Young's modulus of left angle 111 right angle -oriented InAs nanowires on defect density and diameter. It was found that the higher is the defect density the higher are the resistivity and the Young's modulus. Regarding the resistivity, it was deduced that the stacking faults increase the scattering of the electrons in the nanowire. These findings are consistent with the literature, however, the effect described by the other groups is not so pronounced. This difference can be attributed to the significant incompleteness of the physical models used for the data analysis. Regarding the elastic modulus, there are several mechanisms affecting the elasticity of the nanowires discussed in the thesis. It

  5. Many Mobile Health Apps Target High-Need, High-Cost Populations, But Gaps Remain.

    Singh, Karandeep; Drouin, Kaitlin; Newmark, Lisa P; Lee, JaeHo; Faxvaag, Arild; Rozenblum, Ronen; Pabo, Erika A; Landman, Adam; Klinger, Elissa; Bates, David W

    2016-12-01

    With rising smartphone ownership, mobile health applications (mHealth apps) have the potential to support high-need, high-cost populations in managing their health. While the number of available mHealth apps has grown substantially, no clear strategy has emerged on how providers should evaluate and recommend such apps to patients. Key stakeholders, including medical professional societies, insurers, and policy makers, have largely avoided formally recommending apps, which forces patients to obtain recommendations from other sources. To help stakeholders overcome barriers to reviewing and recommending apps, we evaluated 137 patient-facing mHealth apps-those intended for use by patients to manage their health-that were highly rated by consumers and recommended by experts and that targeted high-need, high-cost populations. We found that there is a wide variety of apps in the marketplace but that few apps address the needs of the patients who could benefit the most. We also found that consumers' ratings were poor indications of apps' clinical utility or usability and that most apps did not respond appropriately when a user entered potentially dangerous health information. Going forward, data privacy and security will continue to be major concerns in the dissemination of mHealth apps. Project HOPE—The People-to-People Health Foundation, Inc.

  6. High-precision high-sensitivity clock recovery circuit for a mobile payment application

    Sun Lichong; Yan Na; Min Hao; Ren Wenliang

    2011-01-01

    This paper presents a fully integrated carrier clock recovery circuit for a mobile payment application. The architecture is based on a sampling-detection module and a charge pump phase locked loop. Compared with clock recovery in conventional 13.56 MHz transponders, this circuit can recover a high-precision consecutive carrier clock from the on/off keying (OOK) signal sent by interrogators. Fabricated by a SMIC 0.18-μm EEPROM CMOS process, this chip works from a single power supply as low as 1.5 V Measurement results show that this circuit provides 0.34% frequency deviation and 8 mV sensitivity. (semiconductor integrated circuits)

  7. Selective area growth of InAs nanowires from SiO2/Si(1 1 1) templates direct-written by focused helium ion beam technology

    Yang, Che-Wei; Chen, Wei-Chieh; Chou, Chieh; Lin, Hao-Hsiung

    2018-02-01

    We report on the selective area growth of InAs nanowires on patterned SiO2/Si (1 1 1) nano-holes, prepared by focused helium ion beam technology. We used a single spot mode, in which the focused helium ion beam was fixed on a single point with a He+-ion dosage, ranging from 1.5 pC to 8 pC, to drill the nano-holes. The smallest hole diameter achieved is ∼8 nm. We found that low He+-ion dosage is able to facilitate the nucleation of (1 1 1)B InAs on the highly mismatched Si, leading to the vertical growth of InAs nanowires (NWs). High He-ion dosage, on the contrary, severely damaged Si surface, resulting in tilted and stripe-like NWs. In addition to titled NW grown from (1 1 1)A InAs domain, a new titled growth direction due to defect induced twinning was observed. Cross-sectional TEM images of vertical NWs show mixed wurtizite (WZ) and zincblende (ZB) phases, while WZ phase dominants. The stacking faults resulting from the phase change is proportional to NW diameter, suggesting that the critical diameter of phase turning is larger than 110 nm, the maximum diameter of our NWs. Period of misfit dislocation at the InAs/Si interface of vertical NW is also found larger than the theoretical value when the diameter of heterointerface is smaller than 50 nm, indicating that the small contact area is able to accommodate the large lattice and thermal mismatch between InAs and Si.

  8. Polarized and resonant Raman spectroscopy on single InAs nanowires

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Dacal, L. C. O.; Madureira, J. R.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-08-01

    We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E1 transitions.

  9. INA-Rxiv: The Missing Puzzle in Indonesia’s Scientific Publishing Workflow

    Rahim, R.; Irawan, D. E.; Zulfikar, A.; Hardi, R.; Arliman S, L.; Gultom, E. R.; Ginting, G.; Wahyuni, S. S.; Mesran, M.; Mahjudin, M.; Saputra, I.; Waruwu, F. T.; Suginam, S.; Buulolo, E.; Abraham, J.

    2018-04-01

    INA-Rxiv is the first Indonesia preprint server marking the new development initiated by the open science community. This study aimed at describing the development of INA-Rxiv and its conversations. It usedanalyzer of Inarxiv.id, WhatsApp Group Analyzer, and Twitter Analytics as the tools for data analysis complemented with observation.The results showed that INA-Rxiv users are growing because of the numerous discussions in social media, e.g.WhatsApp,as well as some other positive response of writers who have been using INA- Rxiv. The perspective of growth mindset and the implication of INA-Rxiv movement for filling up the gap in accelerating scientific dissemination process are presented at the end of this article.

  10. High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

    Hou, H. W.; Liu, Z.; Teng, J. H.; Palacios, T.; Chua, S. J.

    2017-04-01

    In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.

  11. High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

    Hou, Zhipeng

    2015-12-18

    Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000cm2/Vs with a nonsaturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov–de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our findings provide a different approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

  12. Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

    Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

    2004-01-01

    NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

  13. Preparation of InAs(0 0 1) surface for spin injection via a chemical route

    Singh, L J; Oliver, R A; Barber, Z H; Eustace, D A; McComb, D W; Clowes, S K; Gilbertson, A M; Magnus, F; Branford, W R; Cohen, L F; Buckle, L; Buckle, P D; Ashley, T

    2007-01-01

    A wet chemical surface treatment for InAs epilayers is investigated to remove the native semiconductor oxide prior to growth of a MgO tunnel barrier and Co ferromagnetic electrode by dc magnetron sputtering. Use of a HCl etch followed by (NH 4 ) 2 S as the pre-growth surface treatment resulted in pinhole-like features in the tunnel barrier, as observed by conducting atomic force microscopy, but this detrimental effect is avoided if the etch procedure is repeated twice. High resolution transmission electron microscopy revealed that the etched samples had uniform tunnel barriers and reducing the growth temperature of the barrier from 200 to 100 0 C significantly improved the abruptness of the semiconductor/barrier interface. Electrical characterization of barrier properties illustrated that all the etched samples showed parabolic differential conductance curves indicative of tunnelling behaviour at 300 K

  14. Towards quantitative three-dimensional characterisation of buried InAs quantum dots

    Kadkhodazadeh, Shima; Semenova, Elizaveta; Schubert, Martin

    2011-01-01

    InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological...... and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical...... characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe...

  15. Towards quantitative three-dimensional characterisation of buried InAs quantum dots

    Kadkhodazadeh, S; Dunin-Borkowski, R E; Semenova, E S; Schubert, M; Yvind, K; Thuvander, M; Stiller, K M

    2011-01-01

    InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe tomography.

  16. An Investigation of the Relationship between High-School Students' Problematic Mobile Phone Use and Their Self-Esteem Levels

    Isiklar, Abdullah; Sar, Ali Haydar; Durmuscelebi, Mustafa

    2013-01-01

    Excessive mobile phone use, especially among adolescents, brings too many debates about its effects. To this end, in this study, we try to investigate the relationship between adolescents' mobile phone use and their self-esteem levels with regard to their genders. For 919 high school students, we evaluated mobile phone use concerning their…

  17. Detuning effect study of High-Q Mobile Phone Antennas

    Bahramzy, Pevand; Pedersen, Gert F.

    2015-01-01

    Number of frequency bands that have to be covered by smart phones, are ever increasing. This broadband coverage can be obtained either by using a low-Q antenna or a high-Q tunable antenna. This study investigates high-Q antennas performance when placed in proximity of the user. This study...

  18. Record high hole mobility in polymer semiconductors via side-chain engineering.

    Kang, Il; Yun, Hui-Jun; Chung, Dae Sung; Kwon, Soon-Ki; Kim, Yun-Hi

    2013-10-09

    Charge carrier mobility is still the most challenging issue that should be overcome to realize everyday organic electronics in the near future. In this Communication, we show that introducing smart side-chain engineering to polymer semiconductors can facilitate intermolecular electronic communication. Two new polymers, P-29-DPPDBTE and P-29-DPPDTSE, which consist of a highly conductive diketopyrrolopyrrole backbone and an extended branching-position-adjusted side chain, showed unprecedented record high hole mobility of 12 cm(2)/(V·s). From photophysical and structural studies, we found that moving the branching position of the side chain away from the backbone of these polymers resulted in increased intermolecular interactions with extremely short π-π stacking distances, without compromising solubility of the polymers. As a result, high hole mobility could be achieved even in devices fabricated using the polymers at room temperature.

  19. "It's a Way of Life for Us": High Mobility and High Achievement in Department of Defense Schools.

    Smrekar, Claire E.; Owens, Debra E.

    2003-01-01

    Examines the academic performance of students in U.S. Department of Defense Education Activity (DoDEA) schools, which have high student mobility. Some observers contend that these students' high achievement is a function of their middle class family and community characteristics. Asserts that DoDEA schools simultaneously "do the right…

  20. Theoretical prediction of high carrier mobility in single-walled black phosphorus nanotubes

    Li, Q. F.; Wang, H. F.; Yang, C. H.; Li, Q. Q.; Rao, W. F.

    2018-05-01

    One-dimensional semiconductors are promising materials for high-performance nanoscale devices. Using the first-principles calculations combined with deformation potential approximation, we study the electronic structures and carrier transport properties of black phosphorus nanotubes (BPNTs). It is found that both armchair and zigzag BPNTs with diameter 13.5-18.5 Å are direct bandgap semiconductors. At a similar diameter, the carrier mobility of zigzag BPNT is one order of magnitude larger than that of armchair BPNT. For armchair BPNTs, the electron mobility is about 90.70-155.33 cm2 V-1 s-1 at room temperature, which is about three times of its hole counterpart. For zigzag BPNTs, the maximum mobility can reach 2.87 ×103 cm2 V-1 s-1. Furthermore, the electronic properties can be effectively tuned by the strain. For zigzag (0,13) nanotube, there is a direct-to-indirect band gap transition at a tensile strain of about 6%. Moreover, the electron mobility is boosted sharply by one order of magnitude by applying the compressive or tensile strain. The electron mobility increases to 14.05 ×103 cm2 V-1 s-1 at a tensile strain of 9%. Our calculations highlight the tunable electronic properties and superior carrier mobility of BPNTs that are promising for interesting applications in future nano-electronic devices.

  1. Results of Sludge Mobilization Testing at Hanford High Level Waste (HLW) Tank

    STAEHR, T.W.

    2001-01-01

    Waste stored in the Tank 241-AZ-101 at the US DOE Hanford is scheduled as the initial feed for high-level waste vitrification. Tank 241-AZ-101 currently holds over 3,000,000 liters of waste made up of a settled sludge layer covered by a layer of liquid supernant. To retrieve the waste from the tank, it is necessary to mobilize and suspend the settled sludge so that the resulting slurry can be pumped from the tank for treatment and vitrification. Two 223.8-kilowatt mixer pumps have been installed in Tank 241-AZ-101 to mobilize the settled sludge layer of waste for retrieval. In May of 2000, the mixer pumps were subjected to a series of tests to determine (1) the extent to which the mixer pumps could mobilize the settle sludge layer of waste, (2) if the mixer pumps could function within operating parameters, and (3) if state-of-the-art monitoring equipment could effectively monitor and quantify the degree of sludge mobilization and suspension. This paper presents the major findings and results of the Tank 241-AZ-101 mixer pump tests, based on analysis of data and waste samples that were collected during the testing. Discussion of the results focuses on the effective cleaning radius achieved and the volume and concentration of sludge mobilized, with both one and two pumps operating in various configurations and speeds. The Tank 241-AZ-101 mixer pump tests were unique in that sludge mobilization parameters were measured using actual waste in an underground storage tank at the hanford Site. The methods and instruments that were used to measure waste mobilization parameters in Tank 241-AZ-101 can be used in other tanks. It can be concluded from the testing that the use of mixer pumps is an effective retrieval method for the mobilization of settled solids in Tank 241-AZ-101

  2. GENERATION OF HIGH RESOLUTION AND HIGH PRECISION ORTHORECTIFIED ROAD IMAGERY FROM MOBILE MAPPING SYSTEM

    M. Sakamoto

    2012-07-01

    Full Text Available In this paper, a novel technique to generate a high resolution and high precision Orthorectified Road Imagery (ORI by using spatial information acquired from a Mobile Mapping System (MMS is introduced. The MMS was equipped with multiple sensors such as GPS, IMU, odometer, 2-6 digital cameras and 2-4 laser scanners. In this study, a Triangulated Irregular Network (TIN based approach, similar to general aerial photogrammetry, was adopted to build a terrain model in order to generate ORI with high resolution and high geometric precision. Compared to aerial photogrammetry, there are several issues that are needed to be addressed. ORI is generated by merging multiple time sequence images of a short section. Hence, the influence of occlusion due to stationary objects, such as telephone poles, trees, footbridges, or moving objects, such as vehicles, pedestrians are very significant. Moreover, influences of light falloff at the edges of cameras, tone adjustment among images captured from different cameras or a round trip data acquisition of the same path, and time lag between image exposure and laser point acquisition also need to be addressed properly. The proposed method was applied to generate ORI with 1 cm resolution, from the actual MMS data sets. The ORI generated by the proposed technique was more clear, occlusion free and with higher resolution compared to the conventional orthorectified coloured point cloud imagery. Moreover, the visual interpretation of road features from the ORI was much easier. In addition, the experimental results also validated the effectiveness of proposed radiometric corrections. In occluded regions, the ORI was compensated by using other images captured from different angles. The validity of the image masking process, in the occluded regions, was also ascertained.

  3. From computational discovery to experimental characterization of a high hole mobility organic crystal.

    Sokolov, Anatoliy N

    2011-08-16

    For organic semiconductors to find ubiquitous electronics applications, the development of new materials with high mobility and air stability is critical. Despite the versatility of carbon, exploratory chemical synthesis in the vast chemical space can be hindered by synthetic and characterization difficulties. Here we show that in silico screening of novel derivatives of the dinaphtho[2,3-b:2\\',3\\'-f]thieno[3,2-b]thiophene semiconductor with high hole mobility and air stability can lead to the discovery of a new high-performance semiconductor. On the basis of estimates from the Marcus theory of charge transfer rates, we identified a novel compound expected to demonstrate a theoretic twofold improvement in mobility over the parent molecule. Synthetic and electrical characterization of the compound is reported with single-crystal field-effect transistors, showing a remarkable saturation and linear mobility of 12.3 and 16 cm(2) V(-1) s(-1), respectively. This is one of the very few organic semiconductors with mobility greater than 10 cm(2) V(-1) s(-1) reported to date.

  4. Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

    Xu, Rui; He, Daowei; Zhang, Yuhan; Wu, Bing; Liu, Fengyuan; Meng, Lan; Liu, Jun-Fang; Wu, Qisheng; Shi, Yi; Wang, Jinlan; Nie, Jia-Cai; Wang, Xinran; He, Lin

    2014-01-01

    Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and grap...

  5. Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

    Kanimozhi, Catherine K.

    2012-10-10

    In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a copolymer with exceptional properties such as extended absorption characteristics (up to ∼1100 nm) and field-effect electron mobility values of >1 cm 2 V -1 s -1. The synthesis of this novel DPP-DPP copolymer in combination with the demonstration of transistors with extremely high electron mobility makes this work an important step toward a new family of DPP-DPP copolymers for application in the general area of organic optoelectronics. © 2012 American Chemical Society.

  6. Followup Audit: DLA Officials Took Appropriate Actions to Address Concerns With Repair Parts for the High Mobility Multipurpose Wheeled Vehicle

    2016-04-29

    Followup Audit : DLA Officials Took Appropriate Actions to Address Concerns With Repair Parts for the High Mobility Multipurpose Wheeled Vehicle A P R I L...Results in Brief Followup Audit : DLA Officials Took Appropriate Actions to Address Concerns With Repair Parts for the High Mobility Multipurpose Wheeled...and Maritime Paid Too Much for High Mobility Multipurpose Wheeled Vehicle Repair Parts,” (HMMWV) was issued on April 4, 2014. The audit

  7. High Magnetic Field in THz Plasma Wave Detection by High Electron Mobility Transistors

    Sakowicz, M.; Łusakowski, J.; Karpierz, K.; Grynberg, M.; Valusis, G.

    The role of gated and ungated two dimensional (2D) electron plasma in THz detection by high electron mobility transistors (HEMTs) was investigated. THz response of GaAs/AlGaAs and GaN/AlGaN HEMTs was measured at 4.4K in quantizing magnetic fields with a simultaneous modulation of the gate voltage UGS. This allowed us to measure both the detection signal, S, and its derivative dS/dUGS. Shubnikov - de-Haas oscillations (SdHO) of both S and dS/dUGS were observed. A comparison of SdHO observed in detection and magnetoresistance measurements allows us to associate unambiguously SdHO in S and dS/dUGS with the ungated and gated parts of the transistor channel, respectively. This allows us to conclude that the entire channel takes part in the detection process. Additionally, in the case of GaAlAs/GaAs HEMTs, a structure related to the cyclotron resonance transition was observed.

  8. High Expression of High-Mobility Group Box 1 in Menstrual Blood: Implications for Endometriosis.

    Shimizu, Keiko; Kamada, Yasuhiko; Sakamoto, Ai; Matsuda, Miwa; Nakatsuka, Mikiya; Hiramatsu, Yuji

    2017-11-01

    Endometriosis is a benign gynecologic disease characterized by the presence of ectopic endometrium and associated with inflammation and immune abnormalities. However, the molecular basis for endometriosis is not well understood. To address this issue, the present study examined the expression of high-mobility group box (HMGB) 1 in menstrual blood to investigate its role in the ectopic growth of human endometriotic stromal cells (ESCs). A total of 139 patients were enrolled in this study; 84 had endometriosis and 55 were nonendometriotic gynecological patients (control). The HMGB1 levels in various fluids were measured by enzyme-linked immunosorbent assay. Expression of receptor for advanced glycation end products (RAGE) in eutopic and ectopic endometrium was assessed by immunohistochemistry, and RAGE and vascular endothelial growth factor ( VEGF) messenger RNA expression in HMGB1- and lipopolysaccharide (LPS)-treated ESCs was evaluated by real-time polymerase chain reaction. The HMGB1 concentration was higher in menstrual blood than in serum or peritoneal fluid ( P endometriosis following retrograde menstruation when complexed with other factors such as LPS by inducing inflammation and angiogenesis.

  9. Comprehensive review on the development of high mobility in oxide thin film transistors

    Choi, Jun Young; Lee, Sang Yeol

    2017-11-01

    Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display (FPD), active matrix organic light emitting display (AMOLED) and active matrix liquid crystal display (AMLCD) due to their excellent electrical characteristics, such as field effect mobility ( μ FE ), subthreshold swing (S.S) and threshold voltage ( V th ). Covalent semiconductor like amorphous silicon (a-Si) is attributed to the anti-bonding and bonding states of Si hybridized orbitals. However, AOSs have not grain boundary and excellent performances originated from the unique characteristics of AOS which is the direct orbital overlap between s orbitals of neighboring metal cations. High mobility oxide TFTs have gained attractive attention during the last few years and today in display industries. It is progressively developed to increase the mobility either by exploring various oxide semiconductors or by adopting new TFT structures. Mobility of oxide thin film transistor has been rapidly increased from single digit to higher than 100 cm2/V·s in a decade. In this review, we discuss on the comprehensive review on the mobility of oxide TFTs in a decade and propose bandgap engineering and novel structure to enhance the electrical characteristics of oxide TFTs.

  10. Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

  11. Photoluminescence characteristics of InAs quantum dots grown by STM/MBE site-control technique

    Nishikawa, S.; Kohmoto, S.; Nakamura, H.; Ishikawa, T.; Asakawa, K.; Wada, O. [Femtosecond Technology Research Association, Tsukuba, Ibaraki (Japan). FESTA Lab.

    2001-03-08

    This paper describes micro-photoluminescence (PL) analysis of site-controlled QDs (SCQDs) grown using a novel in-situ MBE growth technique in which sites of self-assembled InAs QDs are controlled by forming nanometer deposits using a scanning tunneling microscope (STM) probe. We found from the temperature dependence of PL that the carrier collection at QDs at low temperature is limited by carrier diffusion in the wetting layer. The analysis of PL data considering this effect has indicated that individual QDs grown have high crystalline quality in spite of the addition of an artificial STM process during growth. (orig.)

  12. High-skilled labour mobility in Europe before and after the 2004 enlargement.

    Petersen, Alexander M; Puliga, Michelangelo

    2017-03-01

    The extent to which international high-skilled mobility channels are forming is a question of great importance in an increasingly global knowledge-based economy. One factor facilitating the growth of high-skilled labour markets is the standardization of certifiable degrees meriting international recognition. Within this context, we analysed an extensive high-skilled mobility database comprising roughly 382 000 individuals from five broad profession groups (Medical, Education, Technical, Science & Engineering and Business & Legal) over the period 1997-2014, using the 13-country expansion of the European Union (EU) to provide insight into labour market integration. We compare the periods before and after the 2004 enlargement, showing the emergence of a new east-west migration channel between the 13 mostly eastern EU entrants (E) and the rest of the western European countries (W). Indeed, we observe a net directional loss of human capital from E → W, representing 29% of the total mobility after 2004. Nevertheless, the counter-migration from W → E is 7% of the total mobility over the same period, signalling the emergence of brain circulation within the EU. Our analysis of the country-country mobility networks and the country-profession bipartite networks provides timely quantitative evidence for the convergent integration of the EU, and highlights the central role of the UK and Germany as high-skilled labour hubs. We conclude with two data-driven models to explore the structural dynamics of the mobility networks. First, we develop a reconfiguration model to explore the potential ramifications of Brexit and the degree to which redirection of high-skilled labourers away from the UK may impact the integration of the rest of the European mobility network. Second, we use a panel regression model to explain empirical high-skilled mobility rates in terms of various economic 'push-pull' factors, the results of which show that government expenditure on education, per capita

  13. Self-Assembled InAs Nanowires as Optical Reflectors

    Francesco Floris

    2017-11-01

    Full Text Available Subwavelength nanostructured surfaces are realized with self-assembled vertically-aligned InAs nanowires, and their functionalities as optical reflectors are investigated. In our system, polarization-resolved specular reflectance displays strong modulations as a function of incident photon energy and angle. An effective-medium model allows one to rationalize the experimental findings in the long wavelength regime, whereas numerical simulations fully reproduce the experimental outcomes in the entire frequency range. The impact of the refractive index of the medium surrounding the nanostructure assembly on the reflectance was estimated. In view of the present results, sensing schemes compatible with microfluidic technologies and routes to innovative nanowire-based optical elements are discussed.

  14. Spin interactions in InAs quantum dots

    Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

  15. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

    Zomer, P. J.; Dash, S. P.; Tombros, N.; van Wees, B. J.

    2011-01-01

    We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm(2) V-1 s(-1) at room temperature and 275 000 cm(2) V-1 s(-1) at 4.2 K. The excellent quality is supported by the early

  16. Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

    Macco, B.; Knoops, H.C.M.; Verheijen, M.A.; Beyer, W.; Creatore, M.; Kessels, W.M.M.

    2017-01-01

    In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional

  17. High mobility group A1 enhances tumorigenicity of human cholangiocarcinoma and confers resistance to therapy

    Quintavalle, Cristina; Burmeister, Katharina; Piscuoglio, Salvatore

    2017-01-01

    High mobility group A1 (HMGA1) protein has been described to play an important role in numerous types of human carcinoma. By the modulation of several target genes HMGA1 promotes proliferation and epithelial-mesenchymal transition of tumor cells. However, its role in cholangiocarcinoma (CCA) has...

  18. Considering the Geographic Dispersion of Homeless and Highly Mobile Students and Families

    Miller, Peter M.; Bourgeois, Alexis K.

    2013-01-01

    This article addresses school and community-level issues associated with the expanding crisis of student homelessness in the United States. We note that while an increased geographic dispersion of homeless and highly mobile (HHM) families is largely attributed to the widespread effects of the economic recession, it is also furthered by shifting…

  19. An Exploration of Teacher Attrition and Mobility in High Poverty Racially Segregated Schools

    Djonko-Moore, Cara M.

    2016-01-01

    The purpose of this study was to examine the mobility (movement to a new school) and attrition (quitting teaching) patterns of teachers in high poverty, racially segregated (HPRS) schools in the US. Using 2007-9 survey data from the National Center for Education Statistics, a multi-level multinomial logistic regression was performed to examine the…

  20. Using Mobile Communication Technology in High School Education: Motivation, Pressure, and Learning Performance

    Rau, Pei-Luen Patrick; Gao, Qin; Wu, Li-Mei

    2008-01-01

    Motivation and pressure are considered two factors impacting vocational senior high school student learning. New communication technology, especially mobile communication technology, is supposed to be effective in encouraging interaction between the student and the instructor and improving learning efficiency. Social presence and information…

  1. Integrating mHealth Mobile Applications to Reduce High Risk Drinking among Underage Students

    Kazemi, Donna M.; Cochran, Allyson R.; Kelly, John F.; Cornelius, Judith B.; Belk, Catherine

    2014-01-01

    Objective: College students embrace mobile cell phones (MCPs) as a primary communication and entertainment device. The aim of this study was to investigate college students' perceptions toward using mHealth technology to deliver interventions to prevent high-risk drinking and associated consequences. Design/setting: Four focus group interviews…

  2. CityMobil : Human factor issues regarding highly automated vehicles on eLane

    Toffetti, A.; Wilschut, E.S.; Martens, M.H.; Schieben, A.; Rambaldini, A.; Merat, N.; Flemisch, F.

    2009-01-01

    There are several human factor concerns with highly autonomous or semiautonomous driving, such as transition of control, loss of skill, and dealing with automated system errors. Four CityMobil experiments studied the eLane concept for dual-mode cars, and the results of one are described. The open

  3. High School Pupils' Attitudes and Self-Efficacy of Using Mobile Devices

    Nikolopoulou, Kleopatra; Gialamas, Vasilis

    2017-01-01

    This paper regards a study aiming to investigate junior high school pupils' attitudes and self-efficacy of using mobile devices. A 25-item questionnaire was administered to 260 pupils aged 12-15 years old, in Greece. Pupils' attitudes were positive, and four factors were extracted, "perceived usefulness", "affection",…

  4. From computational discovery to experimental characterization of a high hole mobility organic crystal.

    Sokolov, Anatoliy N; Atahan-Evrenk, Sule; Mondal, Rajib; Akkerman, Hylke B; Sá nchez-Carrera, Roel S; Granados-Focil, Sergio; Schrier, Joshua; Mannsfeld, Stefan C B; Zoombelt, Arjan P; Bao, Zhenan; Aspuru-Guzik, Alá n

    2011-01-01

    can be hindered by synthetic and characterization difficulties. Here we show that in silico screening of novel derivatives of the dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene semiconductor with high hole mobility and air stability can lead

  5. A survey study of the association between mobile phone use and daytime sleepiness in California high school students.

    Nathan, Nila; Zeitzer, Jamie

    2013-09-12

    Mobile phone use is near ubiquitous in teenagers. Paralleling the rise in mobile phone use is an equally rapid decline in the amount of time teenagers are spending asleep at night. Prior research indicates that there might be a relationship between daytime sleepiness and nocturnal mobile phone use in teenagers in a variety of countries. As such, the aim of this study was to see if there was an association between mobile phone use, especially at night, and sleepiness in a group of U.S. teenagers. A questionnaire containing an Epworth Sleepiness Scale (ESS) modified for use in teens and questions about qualitative and quantitative use of the mobile phone was completed by students attending Mountain View High School in Mountain View, California (n = 211). Multivariate regression analysis indicated that ESS score was significantly associated with being female, feeling a need to be accessible by mobile phone all of the time, and a past attempt to reduce mobile phone use. The number of daily texts or phone calls was not directly associated with ESS. Those individuals who felt they needed to be accessible and those who had attempted to reduce mobile phone use were also ones who stayed up later to use the mobile phone and were awakened more often at night by the mobile phone. The relationship between daytime sleepiness and mobile phone use was not directly related to the volume of texting but may be related to the temporal pattern of mobile phone use.

  6. Millimeter Wave Hybrid Photonic Wireless Links for High-Speed Wireless Access and Mobile Fronthaul

    Rommel, Simon

    As the introduction of the fifth generation of mobile services (5G) is set to revolutionize the way people, devices and machines connect, the changes to the underlying networks and technologies are no less drastic. The massive increase in user and data capacity, as well as the decrease in latency...... networks. In summary, the work presented in this thesis has regarded a multitude of aspects of millimeter wave hybrid photonic wireless links, expanding upon the state of the art and showing their feasibility for use in fifth generation mobile and high speed wireless access networks – hopefully bringing...

  7. Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors

    Chen, Hu

    2017-07-19

    The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.

  8. Task Phase Recognition for Highly Mobile Workers in Large Building Complexes

    Stisen, Allan; Mathisen, Andreas; Krogh, Søren

    2016-01-01

    requirements on the accuracy of the indoor positioning, and thus come with low deployment and maintenance effort in real-world settings. We evaluated the proposed methods in a large hospital complex, where the highly mobile workers were recruited among the non-clinical workforce. The evaluation is based......-scale indoor work environments, namely from a WiFi infrastructure providing coarse grained indoor positioning, from inertial sensors in the workers’ mobile phones, and from a task management system yielding information about the scheduled tasks’ start and end locations. The methods presented have low...... on manually labelled real-world data collected over 4 days of regular work life of the mobile workforce. The collected data yields 83 tasks in total involving 8 different orderlies from a major university hospital with a building area of 160, 000 m2. The results show that the proposed methods can distinguish...

  9. Investigating the Mobility of Light Autonomous Tracked Vehicles using a High Performance Computing Simulation Capability

    Negrut, Dan; Mazhar, Hammad; Melanz, Daniel; Lamb, David; Jayakumar, Paramsothy; Letherwood, Michael; Jain, Abhinandan; Quadrelli, Marco

    2012-01-01

    This paper is concerned with the physics-based simulation of light tracked vehicles operating on rough deformable terrain. The focus is on small autonomous vehicles, which weigh less than 100 lb and move on deformable and rough terrain that is feature rich and no longer representable using a continuum approach. A scenario of interest is, for instance, the simulation of a reconnaissance mission for a high mobility lightweight robot where objects such as a boulder or a ditch that could otherwise be considered small for a truck or tank, become major obstacles that can impede the mobility of the light autonomous vehicle and negatively impact the success of its mission. Analyzing and gauging the mobility and performance of these light vehicles is accomplished through a modeling and simulation capability called Chrono::Engine. Chrono::Engine relies on parallel execution on Graphics Processing Unit (GPU) cards.

  10. Transparent, high mobility InGaZnO thin films deposited by PLD

    Suresh, Arun; Gollakota, Praveen; Wellenius, Patrick; Dhawan, Anuj; Muth, John F.

    2008-01-01

    Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 10 19 carriers/cm 3 depending on the oxygen partial pressure during deposition. Hall mobilities as high as 16 cm 2 /V s were observed. This is approximately an order of magnitude higher than the mobility of amorphous silicon and indicates that InGaO 3 (ZnO) x with x ≤ 5 may be suitable for transparent, thin film transistor applications. Post-deposition annealing was found to strongly influence the carrier concentration while annealing effects on the electron mobility was less influential

  11. Mobility Performance in Slow- and High-Speed LTE Real Scenarios

    Gimenez, Lucas Chavarria; Cascino, Maria Carmela; Stefan, Maria

    2016-01-01

    Mobility performance and handover data interruption times in real scenarios are studied by means of field measurements in an operational LTE network. Both slow- and high-speed scenarios are analyzed by collecting results from two different areas: Aalborg downtown and the highway which encircles...... in the city center as cells on the same site often cover different non-crossing street canyons. Moreover, no handover failures are experienced in the measurements which confirms robust LTE mobility performance. The average interruption time, which is at least equal to the handover execution time, lays within...... the same city. Measurements reveal that the terminal is configured by the network with different handover parametrization depending on the serving cell, which indicates the use of mobility robustness optimization. Although the network is dominated by three sector sites, no intra-site handovers are observed...

  12. Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

    Henegar, A.J., E-mail: henegar1@umbc.edu; Gougousi, T., E-mail: gougousi@umbc.edu

    2016-12-30

    Graphical abstract: The interaction of the native oxides of GaAs(100) and InAs(100) with alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and TiO{sub 2} is compared. Al{sub 2}O{sub 3} if found to be a significantly better barrier against the transport of the surface native oxide during the film deposition as well as after post-deposition heat treatment. This superior blocking ability also limits the removal of the native oxides during the Al{sub 2}O{sub 3} ALD process. - Highlights: • Native oxide diffusion is required for continuous native oxide removal. • The diffusion barrier capabilities of Al{sub 2}O{sub 3} limits native oxide removal during ALD. • Arsenic oxide exhibits higher mobility from InAs compared to GaAs substrates. • Oxygen scavenging from the surface by trimethyl aluminum is confirmed. - Abstract: In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al{sub 2}O{sub 3} and TiO{sub 2}, using H{sub 2}O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al{sub 2}O{sub 3} ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO{sub 2} and the native oxides continues well after the surface has been covered with 2 nm of TiO{sub 2}. This difference is traced to the superior properties of Al{sub 2}O{sub 3} as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to

  13. Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

    Henegar, A.J.; Gougousi, T.

    2016-01-01

    Graphical abstract: The interaction of the native oxides of GaAs(100) and InAs(100) with alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition (ALD) of Al_2O_3 and TiO_2 is compared. Al_2O_3 if found to be a significantly better barrier against the transport of the surface native oxide during the film deposition as well as after post-deposition heat treatment. This superior blocking ability also limits the removal of the native oxides during the Al_2O_3 ALD process. - Highlights: • Native oxide diffusion is required for continuous native oxide removal. • The diffusion barrier capabilities of Al_2O_3 limits native oxide removal during ALD. • Arsenic oxide exhibits higher mobility from InAs compared to GaAs substrates. • Oxygen scavenging from the surface by trimethyl aluminum is confirmed. - Abstract: In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al_2O_3 and TiO_2, using H_2O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al_2O_3 ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO_2 and the native oxides continues well after the surface has been covered with 2 nm of TiO_2. This difference is traced to the superior properties of Al_2O_3 as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to lower native oxide stability as well as an initial diffusion path formation by the indium oxides.

  14. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

    Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

    2010-01-01

    We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

  15. Mobilities Mobilities

    César Pompeyo

    2011-12-01

    Full Text Available Urry, John (2007 Mobilities.Oxford: Polity Press.Urry, John (2007 Mobilities.Oxford: Polity Press.John Urry (1946-, profesor en la Universidad de Lancaster, es un sociólogo de sobra conocido y altamente reputado en el panorama internacional de las ciencias sociales. Su dilatada carrera, aparentemente dispersa y diversificada, ha seguido senderos bastante bien definidos dejando tras de sí un catálogo extenso de obras sociológicas de primer nivel. Sus primeros trabajos se centraban en el campo de la teoría social y la filosofía de las ciencias sociales o de la sociología del poder [...

  16. Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

    Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Dagli, N.; Fiore, A.

    2007-01-01

    The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed.

  17. Determination of the coherence length in high-mobility semiconductor-coupled Josephson weak links

    Kleinsasser, A.W.

    1991-01-01

    A Nb-InAs-Nb superconductor-semiconductor-superconductor weak link based on a high-mobility homoepitaxial n-InAs film was reported recently [Akazaki, Kawakami, and Nittu J. Appl. Phys. 66, 6121 (1989)]. Measurements of the electron concentration, effective mass, and mobility allowed the coherence length in the normal link to be calculated. The mobility was high enough that the dirty limit was not applicable in the temperature range (∼2--7 K) over which the device critical current was measured. The temperature dependence of the critical current could not be fit by the usual theoretical form, even though an expression for the coherence length was used that should be applicable in both the clean and dirty limits. In this paper is demonstrated an excellent fit to the data, obtained by using the magnitude of the coherence length as a fitting parameter and assuming the dirty limit temperature dependence. This implies a coherence length proportional to T -1/2 but far shorter than that calculated from the known material parameters. It is suggested that a different scaling length may apply in high-mobility devices

  18. Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

    Zhang, Panlong; Wang, Haibo; Yan, Donghang

    2017-09-01

    A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

    Warwick, C. N.; Venkateshvaran, D.; Sirringhaus, H.

    2015-09-01

    We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10-DNTT). The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014)] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

  20. Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

    C. N. Warwick

    2015-09-01

    Full Text Available We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT and 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT. The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

  1. La costituzione dell’INA e il monopolio statale delle assicurazioni (1912-1922 = The constitution of INA and the state monopoly of insurance (1912-1922

    Serena Potito

    2012-07-01

    Full Text Available Il saggio –basato principalmente su documenti attualmente conservati presso l’Archivio Storico dell’INA, a Roma– esamina le vicende legate alla nascita dell’Istituto, costituito in un regime transitorio di monopolio relativo nel settore delle assicurazioni sulla vita.A causa del suo significato economico e politico, questa speciale forma di monopolio statale diede luogo a molte reazioni nell’ambito finanziario e politico nazionale, pertanto l’INA iniziò i primi anni di attività in una situazione conflittuale ed incerta.Il saggio inoltre approfondisce le ripercussioni sul mercato assicurativo internazionale in seguito alla nascita dell’INA.Durante il decennio di monopolio parziale dell’Istituto nel settore delle assicurazioni sulla vita (1912-1922, le compagnie di assicurazione straniere ritennero compromessi i loro interessi finanziari nel mercato italiano, e lo osteggiarono fino al 1923, quando una nuova legge riformò il mercato assicurativo sulla vita, abolendo il regime di monopolio.The essay –mainly based on documents actually preserved in the Historical Archives of INA, in Rome– examines the events connected with the foundation of the Institute, established in a transient condition of partial monopoly system in life insurance sector. Because of its economic and political meaning, this special form of state monopoly gave rise to many reactions in the financial and political national context, and so INA started its first years of activity in a troubled and unstable situation. The essay also discusses about the repercussions on international insurance market in consequence of the foundation of INA.During the ten-year perior of partial monopoly of the Institute in life insurance sector (1912-1922, foreign insurance companies deemed their financial interest in Italian market jeopardized, and contrasted with it until 1923, when a new act reformed life insurance market, abrogating monopoly system. 

  2. Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

    Charith Jayanada Koswaththage

    2016-11-01

    Full Text Available InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.

  3. A High Speed Mobile Communication System implementing Bicasting Architecture on the IP Layer

    Yamada, Kazuhiro

    2012-01-01

    Having a broadband connection on high speed rails is something that business travelers want most. Increasing number of passengers is requesting even higher access speeds. We are proposing the Media Convergence System as an ideal communication system for future high speed mobile entities. The Media Convergence System recognizes plural wireless communication media between the ground network and each train, and then traffic is load-balanced over active media which varies according to circumstanc...

  4. Awareness of the Vysočina Regional Food Labels With Context of Their Media Presence

    Martina Chalupová

    2016-01-01

    Full Text Available The article presents results of research study that focused on the recognition of the Vysočina regional labels among the consumers in the region in connection with media analysis about the topic. Research among consumers was conducted in each district of Vysočina Region (Jihlava, Žďár nad Sázavou, Třebíč, Havlíčkův Brod and Pelhřimov by interviewing a sample of 819 respondents, selected by quota sampling methods. The research was aimed at analysing the ability of respondents to recognise and differentiate two existing regional labels VYSOČINA Regional Product®, Regional Food Vysočina Region and also nonexistent brand From Our Region Vysočina, created by authors. Data have been processed with correspondence analysis and showed that respondents connect different characteristics with the labels. Media analysis of the Vysočina regional labels revealed that media may help building awareness about the labels but they do not shape respondents’ views on them. Examining the link between the frequency of different types of information in media and their potential impact on the labels’ pereception by consumers have shown distorted image. Stronger consensus between research and media analysis have been examined only on importance of products’ origin, which can be viewed as a logical inference from the name of the labels.

  5. Mobile Phone Ratiometric Imaging Enables Highly Sensitive Fluorescence Lateral Flow Immunoassays without External Optical Filters.

    Shah, Kamal G; Singh, Vidhi; Kauffman, Peter C; Abe, Koji; Yager, Paul

    2018-05-14

    Paper-based diagnostic tests based on the lateral flow immunoassay concept promise low-cost, point-of-care detection of infectious diseases, but such assays suffer from poor limits of detection. One factor that contributes to poor analytical performance is a reliance on low-contrast chromophoric optical labels such as gold nanoparticles. Previous attempts to improve the sensitivity of paper-based diagnostics include replacing chromophoric labels with enzymes, fluorophores, or phosphors at the expense of increased fluidic complexity or the need for device readers with costly optoelectronics. Several groups, including our own, have proposed mobile phones as suitable point-of-care readers due to their low cost, ease of use, and ubiquity. However, extant mobile phone fluorescence readers require costly optical filters and were typically validated with only one camera sensor module, which is inappropriate for potential point-of-care use. In response, we propose to couple low-cost ultraviolet light-emitting diodes with long Stokes-shift quantum dots to enable ratiometric mobile phone fluorescence measurements without optical filters. Ratiometric imaging with unmodified smartphone cameras improves the contrast and attenuates the impact of excitation intensity variability by 15×. Practical application was shown with a lateral flow immunoassay for influenza A with nucleoproteins spiked into simulated nasal matrix. Limits of detection of 1.5 and 2.6 fmol were attained on two mobile phones, which are comparable to a gel imager (1.9 fmol), 10× better than imaging gold nanoparticles on a scanner (18 fmol), and >2 orders of magnitude better than gold nanoparticle-labeled assays imaged with mobile phones. Use of the proposed filter-free mobile phone imaging scheme is a first step toward enabling a new generation of highly sensitive, point-of-care fluorescence assays.

  6. Random demographic household surveys in highly mobile pastoral communities in Chad.

    Weibel, Daniel; Béchir, Mahamat; Hattendorf, Jan; Bonfoh, Bassirou; Zinsstag, Jakob; Schelling, Esther

    2011-05-01

    Reliable demographic data is a central requirement for health planning and management, and for the implementation of adequate interventions. This study addresses the lack of demographic data on mobile pastoral communities in the Sahel. A total of 1081 Arab, Fulani and Gorane women and 2541 children (1336 boys and 1205 girls) were interviewed and registered by a biometric fingerprint scanner in five repeated random transect demographic and health surveys conducted from March 2007 to January 2008 in the Lake Chad region in Chad. Important determinants for the planning and implementation of household surveys among mobile pastoral communities include: environmental factors; availability of women for interviews; difficulties in defining "own" children; the need for information-education-communication campaigns; and informed consent of husbands in typically patriarchal societies. Due to their high mobility, only 5% (56/1081) of registered women were encountered twice. Therefore, it was not possible to establish a demographic and health cohort. Prospective demographic and health cohorts are the most accurate method to assess child mortality and other demographic indices. However, their feasibility in a highly mobile pastoral setting remains to be shown. Future interdisciplinary scientific efforts need to target innovative methods, tools and approaches to include marginalized communities in operational health and demographic surveillance systems.

  7. Experiences from Implementing a Mobile Multiplayer Real-Time Game for Wireless Networks with High Latency

    Alf Inge Wang

    2009-01-01

    Full Text Available This paper describes results and experiences from designing, implementing, and testing a multiplayer real-time game over mobile networks with high latency. The paper reports on network latency and bandwidth measurements from playing the game live over GPRS, EDGE, UMTS, and WLAN using the TCP and the UDP protocols. These measurements describe the practical constraints of various wireless networks and protocols when used for mobile multiplayer game purposes. Further, the paper reports on experiences from implementing various approaches to minimize issues related to high latency. Specifically, the paper focuses on a discussion about how much of the game should run locally on the client versus on the server to minimize the load on the mobile device and obtain sufficient consistency in the game. The game was designed to reveal all kinds of implementation issues of mobile network multiplayer games. The goal of the game is for a player to push other players around and into traps where they loose their lives. The game relies heavily on collision detection between the players and game objects. The paper presents experiences from experimenting with various approaches that can be used to handle such collisions, and highlights the advantages and disadvantages of the various approaches.

  8. Random demographic household surveys in highly mobile pastoral communities in Chad

    Béchir, Mahamat; Hattendorf, Jan; Bonfoh, Bassirou; Zinsstag, Jakob; Schelling, Esther

    2011-01-01

    Abstract Problem Reliable demographic data is a central requirement for health planning and management, and for the implementation of adequate interventions. This study addresses the lack of demographic data on mobile pastoral communities in the Sahel. Approach A total of 1081 Arab, Fulani and Gorane women and 2541 children (1336 boys and 1205 girls) were interviewed and registered by a biometric fingerprint scanner in five repeated random transect demographic and health surveys conducted from March 2007 to January 2008 in the Lake Chad region in Chad. Local setting Important determinants for the planning and implementation of household surveys among mobile pastoral communities include: environmental factors; availability of women for interviews; difficulties in defining “own” children; the need for information-education-communication campaigns; and informed consent of husbands in typically patriarchal societies. Relevant changes Due to their high mobility, only 5% (56/1081) of registered women were encountered twice. Therefore, it was not possible to establish a demographic and health cohort. Lessons learnt Prospective demographic and health cohorts are the most accurate method to assess child mortality and other demographic indices. However, their feasibility in a highly mobile pastoral setting remains to be shown. Future interdisciplinary scientific efforts need to target innovative methods, tools and approaches to include marginalized communities in operational health and demographic surveillance systems. PMID:21556307

  9. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

    2017-01-01

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm 2 V −1 s −1 ), which is much higher than that of MoS 2 monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm 2 V −1 s −1 ), which is higher than that of MoS 2 monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm 2 V −1 s −1 , which is much higher than that of MoS 2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  10. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Du, Juan [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Xia, Congxin, E-mail: xiacongxin@htu.edu.cn [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Liu, Yaming [Henan Institute of Science and Technology, Xinxiang 453003 (China); Li, Xueping [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Peng, Yuting [Department of Physics, University of Texas at Arlington, TX 76019 (United States); Wei, Shuyi [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China)

    2017-04-15

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is much higher than that of MoS{sub 2} monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is higher than that of MoS{sub 2} monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm{sup 2} V{sup −1} s{sup −1}, which is much higher than that of MoS{sub 2} monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  11. Comparison of fixed-bearing and mobile-bearing total knee arthroplasty after high tibial osteotomy.

    Hernigou, Philippe; Huys, Maxime; Pariat, Jacques; Roubineau, François; Flouzat Lachaniette, Charles Henri; Dubory, Arnaud

    2018-02-01

    There is no information comparing the results of fixed-bearing total knee replacement and mobile-bearing total knee replacement in the same patients previously treated by high tibial osteotomy. The purpose was therefore to compare fixed-bearing and mobile-bearing total knee replacements in patients treated with previous high tibial osteotomy. We compared the results of 57 patients with osteoarthritis who had received a fixed-bearing prosthesis after high tibial osteotomy with the results of 41 matched patients who had received a rotating platform after high tibial osteotomy. The match was made for length of follow-up period. The mean follow-up was 17 years (range, 15-20 years). The patients were assessed clinically and radiographically. The pre-operative knee scores had no statistically significant differences between the two groups. So was the case with the intra-operative releases, blood loss, thromboembolic complications and infection rates in either group. There was significant improvement in both groups of knees, and no significant difference was observed between the groups (i.e., fixed-bearing and mobile-bearing knees) for the mean Knee Society knee clinical score (95 and 92 points, respectively), or the Knee Society knee functional score (82 and 83 points, respectively) at the latest follow-up. However, the mean post-operative knee motion was higher for the fixed-bearing group (117° versus 110°). In the fixed-bearing group, one knee was revised because of periprosthetic fracture. In the rotating platform mobile-bearing group, one knee was revised because of aseptic loosening of the tibial component. The Kaplan-Meier survivorship for revision at ten years of follow-up was 95.2% for the fixed bearing prosthesis and 91.1% for the rotating platform mobile-bearing prosthesis. Although we did manage to detect significant differences mainly in clinical and radiographic results between the two groups, we found no superiority or inferiority of the mobile

  12. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

    Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

    2008-01-01

    Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm 2 /V s) and sheet charge density (>3x10 13 cm -2 ), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/□ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

  13. Mobile plant for encapsulating of solid high-level radioactive waste in metal matrix

    Sobolev, I.A.; Arustamov, A.Eh.; Shiryaev, V.V.; Ozhovan, M.I.; Semenov, K.N.; Kachalov, M.B.

    1993-01-01

    Technology for disposal of spent radionuclide sources of ionizing radiation into the standard well-type storage facilities is considered. Universal mobile facility, providing for incorporation of high-level solid wastes into metallic matrices, is proposed. The facility consists of separate moduli, assembled on a transport platform. Electrical meter, wherein the matrix metal (lead and its alloys) is melted and heated up to 600-800 C constitutes the basic modulus in the facility. 4 refs., 4 figs

  14. Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors

    2017-03-01

    non - ionizing proton radiation damage effects at different energy levels on a GaN-on-silicon high electron mobility transistor...DISTRIBUTION CODE 13. ABSTRACT (maximum 200 words) In this work, a physics-based simulation of non - ionizing proton radiation damage effects at different...Polarization . . . . . . . . . . . . . . 6 2.3 Non - Ionizing Radiation Damage Effects . . . . . . . . . . . . . . . 10 2.4 Non - Ionizing Radiation Damage in

  15. Effect of GaAs interlayer thickness variations on the optical properties of multiple InAs QD structure

    Park, C.Y.; Park, K.W.; Kim, J.M.; Lee, Y.T.

    2009-01-01

    Multiple InAs/GaAs self-assembled quantum dots (QDs) with vertically stacked structure are grown by molecular beam epitaxy and the effects of GaAs interlayer thickness variation on optical properties are studied. The growth conditions are optimized by in-situ RHEED, AFM, and PL measurement. The five InAs QD layers are embedded in GaAs and Al0.3Ga0.7As layer. The PL intensity is increased with increasing GaAs interlayer thickness. The thin GaAs interlayer has strain field, the strain-induced intermixing of indium atoms in the InAs QDs (blue-shift) can overcompensate for the effect on the increased QD size (red-shift) (H. Heidemeyer et al. Appl. Phys. Lett. 80, 1544 (2002); T. Nakaoka et al. J. Appl. Phys. Lett. 96, 150 (2004)[1, 2], respectively). For the interlayer thickness larger than about 7 nm, the blue-shifts are correlated to the dominant high-energy excited state transitions due to the successive state filling of the ground and higher excited states in the QDs. The energy separation of double PL peaks, originated from two different excited states, was kept at around 50 meV at room temperature. A possible mechanism concerning this phenomenon is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Design of a multivariable controller for a CANDU 600 MWe nuclear power plant using the INA method

    Roy, N.; Boisvert, J.; Mensah, S.

    1984-04-01

    The development of large and complex nuclear and process plants requires high-performance control systems, designed with rigorous multivariable techniques. This work is part of an analytical study demonstrating the real potential of multivariable methods. It covers every step in the design of a multi-variable controller for a Gentilly-2 type CANDU 600 MWe nuclear power plant using the Inverse Nyquist Array (INA) method. First the linear design model and its preliminary modifications are described. The design tools are reviewed and the operations required to achieve open-loop diagonal dominance are thoroughly described. Analysis of the closed-loop system is then performed and a feedback matrix is selected to meet the design specifications. The performance of the controller on the linear model is verified by simulation. Finally, the controller is implemented on the reference non-linear model to assess its overall performance. The results show that the INA method can be used successfully to design controllers for large and complex systems

  17. Strain in GaAs / InAs core-shell nanowire heterostructures grown on GaAs

    Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Rieger, Torsten; Lepsa, Mihail Ion [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

    2012-07-01

    The growth of semiconductor nanowires (NWs) has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. Compared to planar heterostructures, the nanowire approach offers an advantage regarding the possibility to form heterostructures between highly lattice mismatched systems, because the free surface of the nanowires allows to relieve the strain more efficiently. One particular way to form heterostructures in the NW geometry, is the fabrication of core-shell devices, in which a NW core is surrounded by a shell of different material. The understanding of the mutual strain between core and shell, as well as the relaxation behavior of the system are crucial for the fabrication of functional devices. In this contribution we report on first X-ray diffraction measurements of GaAs-core/InAs-shell nanowires grown on GaAs(111) by molecular beam epitaxy. Using symmetric- and grazing-incidence X-ray diffraction, the relaxation state of the InAs shell as well as the strain in the GaAs core are measured as function of the InAs shell thickness, showing a gradual relaxation behavior of the shell.

  18. Comparative study of porosification in InAs, InP, ZnSe and ZnCdS

    Monaico, Eduard; Tiginyanu, Ion; Nielsch, Kornelius; Ursaki, Veaceslav; Colibaba, Gleb; Nedeoglo, Dmitrii; Cojocaru, Ala; Foell Helmut

    2013-01-01

    We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn 0,4 Cd 0,6 S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both current line oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline high conductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. (authors)

  19. Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy

    Pelliccione, M. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106 (United States); Bartel, J.; Goldhaber-Gordon, D. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States); Sciambi, A. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Pfeiffer, L. N.; West, K. W. [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-11-03

    Correlated electron states in high mobility two-dimensional electron systems (2DESs), including charge density waves and microemulsion phases intermediate between a Fermi liquid and Wigner crystal, are predicted to exhibit complex local charge order. Existing experimental studies, however, have mainly probed these systems at micron to millimeter scales rather than directly mapping spatial organization. Scanning probes should be well-suited to study the spatial structure of these states, but high mobility 2DESs are found at buried semiconductor interfaces, beyond the reach of conventional scanning tunneling microscopy. Scanning techniques based on electrostatic coupling to the 2DES deliver important insights, but generally with resolution limited by the depth of the 2DES. In this letter, we present our progress in developing a technique called “virtual scanning tunneling microscopy” that allows local tunneling into a high mobility 2DES. Using a specially designed bilayer GaAs/AlGaAs heterostructure where the tunnel coupling between two separate 2DESs is tunable via electrostatic gating, combined with a scanning gate, we show that the local tunneling can be controlled with sub-250 nm resolution.

  20. Dietary differentiation and the evolution of population genetic structure in a highly mobile carnivore.

    Małgorzata Pilot

    Full Text Available Recent studies on highly mobile carnivores revealed cryptic population genetic structures correlated to transitions in habitat types and prey species composition. This led to the hypothesis that natal-habitat-biased dispersal may be responsible for generating population genetic structure. However, direct evidence for the concordant ecological and genetic differentiation between populations of highly mobile mammals is rare. To address this we analyzed stable isotope profiles (δ(13C and δ(15N values for Eastern European wolves (Canis lupus as a quantifiable proxy measure of diet for individuals that had been genotyped in an earlier study (showing cryptic genetic structure, to provide a quantitative assessment of the relationship between individual foraging behavior and genotype. We found a significant correlation between genetic distances and dietary differentiation (explaining 46% of the variation in both the marginal test and crucially, when geographic distance was accounted for as a co-variable. These results, interpreted in the context of other possible mechanisms such as allopatry and isolation by distance, reinforce earlier studies suggesting that diet and associated habitat choice are influencing the structuring of populations in highly mobile carnivores.

  1. High-mobility pyrene-based semiconductor for organic thin-film transistors.

    Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

    2013-05-01

    Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

  2. Metalorganic vapour epitaxial growth and infrared characterisation of InAsSb and InAs on InAs substrates

    Baisitse, TR

    2006-07-01

    Full Text Available Motivation for the research: Interest exists in III-V semiconducting materials (InAs, GaSb, InSb and related alloys) for the detection of infrared radiation; Such materials could be used as alternatives for future infrared detectors and various...

  3. Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

    Kesler, V.G., E-mail: kesler@isp.nsc.ru [Institute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090 (Russian Federation); Seleznev, V.A.; Kovchavtsev, A.P.; Guzev, A.A. [Institute of Semiconductor Physics SB RAS, Lavrentiev av., 13, Novosibirsk 630090 (Russian Federation)

    2010-05-01

    X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 deg. C. Etching for 2-30 min resulted in the formation of 'pits' and 'hillocks' on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 x 10{sup 8} cm{sup -2}, entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 deg. C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the 'pits' proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

  4. Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

    Kesler, V. G.; Seleznev, V. A.; Kovchavtsev, A. P.; Guzev, A. A.

    2010-05-01

    X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 °C. Etching for 2-30 min resulted in the formation of "pits" and "hillocks" on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 × 10 8 cm -2, entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 °C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the "pits" proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

  5. Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

    Kesler, V.G.; Seleznev, V.A.; Kovchavtsev, A.P.; Guzev, A.A.

    2010-01-01

    X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 deg. C. Etching for 2-30 min resulted in the formation of 'pits' and 'hillocks' on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 x 10 8 cm -2 , entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 deg. C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the 'pits' proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

  6. Controlling the size of InAs quantum dots on Si1-xGex/Si(0 0 1) by metalorganic vapor-phase epitaxy

    Kawaguchi, Kenichi; Ebe, Hiroji; Ekawa, Mitsuru; Sugama, Akio; Arakawa, Yasuhiko

    2009-01-01

    The formation of III-V InAs quantum dots (QDs) on group-IV Si 1-x Ge x /Si(0 0 1) was investigated by metalorganic vapor-phase epitaxy. Two types of QDs, round-shaped QDs and giant QDs elongated in the [1 1 0] or [1,-1,0] direction, were observed in a growth condition of low V/III ratios. An increase in the V/III ratio and AsH 3 preflow during the cooling process was found to suppress the formation of giant QDs. It was considered that replacing the H-stabilized SiGe surface with the As-stabilized surface was necessary for increasing the QD nucleation. The size and density of InAs QDs on SiGe were controllable as well as that on III-V semiconductor buffer layers, and InAs QDs with a density as high as 5 x 10 10 cm -2 were obtained.

  7. Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)

    Zhao, Z.M.; Hul'ko, O.; Kim, H.J.; Liu, J.; Shi, B.; Xie, Y.H.

    2005-01-01

    InAs self-assembled quantum dots (QDs) were grown on Si (001) substrates via molecular beam epitaxy. The size distribution and density of InAs QDs grown under different conditions were studied using plan-view transmission electron microscopy. Dot density was shown to strongly depend on arsenic beam equivalent pressure (BEP) ranging from 2.8x10 -5 to 1.2x10 -3 Pa. In contrast, dot density was nearly independent of substrate temperature from 295 to 410 deg. C under constant arsenic BEP, while broadening of size distribution was observed with increasing temperature. The mechanism accounting for some of the main features of the experimental observations is discussed. Finally, InAs quantum dots with optimized narrow size distribution and high density were grown at low arsenic BEP of 7.2 x10 -5 Pa and low temperature of 250 deg. C followed by annealing at arsenic BEP of 1.9 x10 -4 Pa and temperature of 410 deg. C

  8. The Influence of Perceived Convenience and Curiosity on Continuance Intention in Mobile English Learning for High School Students Using PDAs

    Chang, Chi-Cheng; Tseng, Kuo-Hung; Liang, Chaoyun; Yan, Chi-Fang

    2013-01-01

    Mobile learning aims to utilise communication devices such as mobile devices and wireless connection in combination with e-learning systems, allowing learners to experience convenient, instant and suitable learning at unrestricted time and place. Participants were 125 Taiwanese senior high school students, whose continuance intention was examined…

  9. High-resolution charge carrier mobility mapping of heterogeneous organic semiconductors

    Button, Steven W.; Mativetsky, Jeffrey M.

    2017-08-01

    Organic electronic device performance is contingent on charge transport across a heterogeneous landscape of structural features. Methods are therefore needed to unravel the effects of local structure on overall electrical performance. Using conductive atomic force microscopy, we construct high-resolution out-of-plane hole mobility maps from arrays of 5000 to 16 000 current-voltage curves. To demonstrate the efficacy of this non-invasive approach for quantifying and mapping local differences in electrical performance due to structural heterogeneities, we investigate two thin film test systems, one bearing a heterogeneous crystal structure [solvent vapor annealed 5,11-Bis(triethylsilylethynyl)anthradithiophene (TES-ADT)—a small molecule organic semiconductor] and one bearing a heterogeneous chemical composition [p-DTS(FBTTh2)2:PC71BM—a high-performance organic photovoltaic active layer]. TES-ADT shows nearly an order of magnitude difference in hole mobility between semicrystalline and crystalline areas, along with a distinct boundary between the two regions, while p-DTS(FBTTh2)2:PC71BM exhibits subtle local variations in hole mobility and a nanoscale domain structure with features below 10 nm in size. We also demonstrate mapping of the built-in potential, which plays a significant role in organic light emitting diode and organic solar cell operation.

  10. Effects of inositol trisphosphate on calcium mobilization in high-voltage and saponin-permeabilized platelets

    Gear, A.R.L.; Hallam, T.J.

    1986-01-01

    Interest in phosphatidylinositol metabolism has been greatly stimulated by the findings that diglyceride and inositol phosphates may serve as second messengers in modulating cellular function. Formation of 1,4,5-inositol trisphosphate (IP 3 ), in particular, has been linked to mobilization of intracellular calcium in a number of cell types. The authors have examined the ability of IP 3 to mobilize calcium in human platelets permeabilized by either saponin or high-voltage discharge. Saponin at 15 μg/ml effectively permeabilized platelets to exogenous inositol 1,4,5-trisphosphate which released bound [ 45 Ca] within 1 min and with a Ka of 7.4 +/- 4.1 μM. A small (25%) azide-sensitive pool was also responsive to inositol trisphosphate. The calcium pools were completely discharged by A-23187 and the ATP-dependent uptake was prevented by dinitrophenol. In contrast to the result with saponin, platelets accessed by high-voltage discharge were insensitive to challenge by inositol 1,4,5-trisphosphate. The data suggest that while inositol 1,4,5-trisphosphate can rapidly mobilize platelet calcium, the ability to demonstrate this depends on the method of permeabilization

  11. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

    2008-06-21

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

  12. High-field asymmetric waveform ion mobility spectrometry for mass spectrometry-based proteomics.

    Swearingen, Kristian E; Moritz, Robert L

    2012-10-01

    High-field asymmetric waveform ion mobility spectrometry (FAIMS) is an atmospheric pressure ion mobility technique that separates gas-phase ions by their behavior in strong and weak electric fields. FAIMS is easily interfaced with electrospray ionization and has been implemented as an additional separation mode between liquid chromatography (LC) and mass spectrometry (MS) in proteomic studies. FAIMS separation is orthogonal to both LC and MS and is used as a means of on-line fractionation to improve the detection of peptides in complex samples. FAIMS improves dynamic range and concomitantly the detection limits of ions by filtering out chemical noise. FAIMS can also be used to remove interfering ion species and to select peptide charge states optimal for identification by tandem MS. Here, the authors review recent developments in LC-FAIMS-MS and its application to MS-based proteomics.

  13. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

    2008-01-01

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

  14. High Field Asymmetric Waveform Ion Mobility Spectrometry (FAIMS) for Mass Spectrometry-Based Proteomics

    Swearingen, Kristian E.; Moritz, Robert L.

    2013-01-01

    SUMMARY High field asymmetric waveform ion mobility spectrometry (FAIMS) is an atmospheric pressure ion mobility technique that separates gas-phase ions by their behavior in strong and weak electric fields. FAIMS is easily interfaced with electrospray ionization and has been implemented as an additional separation mode between liquid chromatography (LC) and mass spectrometry (MS) in proteomic studies. FAIMS separation is orthogonal to both LC and MS and is used as a means of on-line fractionation to improve detection of peptides in complex samples. FAIMS improves dynamic range and concomitantly the detection limits of ions by filtering out chemical noise. FAIMS can also be used to remove interfering ion species and to select peptide charge states optimal for identification by tandem MS. Here, we review recent developments in LC-FAIMS-MS and its application to MS-based proteomics. PMID:23194268

  15. Highly mobile charge-transfer excitons in two-dimensional WS2/tetracene heterostructures

    Zhu, Tong; Yuan, Long; Zhao, Yan; Zhou, Mingwei; Wan, Yan; Mei, Jianguo; Huang, Libai

    2018-01-01

    Charge-transfer (CT) excitons at heterointerfaces play a critical role in light to electricity conversion using organic and nanostructured materials. However, how CT excitons migrate at these interfaces is poorly understood. We investigate the formation and transport of CT excitons in two-dimensional WS2/tetracene van der Waals heterostructures. Electron and hole transfer occurs on the time scale of a few picoseconds, and emission of interlayer CT excitons with a binding energy of ~0.3 eV has been observed. Transport of the CT excitons is directly measured by transient absorption microscopy, revealing coexistence of delocalized and localized states. Trapping-detrapping dynamics between the delocalized and localized states leads to stretched-exponential photoluminescence decay with an average lifetime of ~2 ns. The delocalized CT excitons are remarkably mobile with a diffusion constant of ~1 cm2 s−1. These highly mobile CT excitons could have important implications in achieving efficient charge separation. PMID:29340303

  16. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

    Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

    2018-02-01

    A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

  17. Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots

    Chen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.

    2008-07-01

    This work investigates the surfactant effect on exposed and buried InAs quantum dots (QDs) by incorporating Sb into the QD layers with various Sb beam equivalent pressures (BEPs). Secondary ion mass spectroscopy shows the presence of Sb in the exposed and buried QD layers with the Sb intensity in the exposed layer substantially exceeding that in the buried layer. Incorporating Sb can reduce the density of the exposed QDs by more than two orders of magnitude. However, a high Sb BEP yields a surface morphology with a regular periodic structure of ellipsoid terraces. A good room-temperature photoluminescence (PL) at ˜1600 nm from the exposed QDs is observed, suggesting that the Sb incorporation probably improves the emission efficiency by reducing the surface recombination velocity at the surface of the exposed QDs. Increasing Sb BEP causes a blueshift of the emission from the exposed QDs due to a reduction in the dot height as suggested by atomic force microscopy. Increasing Sb BEP can also blueshift the ˜1300 nm emission from the buried QDs by decreasing the dot height. However, a high Sb BEP yields a quantum well-like PL feature formed by the clustering of the buried QDs into an undulated planar layer. These results indicate a marked Sb surfactant effect that can be used to control the density, shape, and luminescence of the exposed and buried QDs.

  18. Aspects of High-Q Tunable Antennas and Their Deployment for 4G Mobile Communications

    Bahramzy, Pevand; Jagielski, Ole; Svendsen, Simon

    2016-01-01

    Tunable antennas are very promising for future generations of mobile communications, where broad frequency coverage will be required increasingly. This work describes the design of small high-Quality factor (Q) tunable antennas based on Micro-Electro-Mechanical Systems (MEMS), which are capable...... of operation in the frequency ranges 600 - 960 MHz and 1710 - 2690 MHz. Some aspects of high-Q tunable antennas are investigated through experimental measurements and the result are presented. Results show that more than -30 dB of isolation can be achieved between the Transmit (Tx) and Receive (Rx) antennas...

  19. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the...

  20. The operation cutoff frequency of high electron mobility transistor measured by terahertz method

    Zhu, Y. M.; Zhuang, S. L.

    2014-01-01

    Commonly, the cutoff frequency of high electron mobility transistor (HEMT) can be measured by vector network analyzer (VNA), which can only measure the sample exactly in low frequency region. In this paper, we propose a method to evaluate the cutoff frequency of HEMT by terahertz (THz) technique. One example shows the cutoff frequency of our HEMT is measured at ∼95.30 GHz, which is reasonable agreement with that estimated by VNA. It is proved THz technology a potential candidate for the substitution of VNA for the measurement of high-speed devices even up to several THz.

  1. Increase in electron mobility of InGaAs/InP composite channel high electron mobility transistor structure due to SiN passivation

    Liu Yuwei; Wang Hong; Radhakrishnan, K.

    2007-01-01

    The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structure has been studied. Different from the structures with single InGaAs channel, an increase in effective mobility μ e with a negligible change of sheet carrier density n s after SiN deposition is clearly observed in the composite channel structures. The enhancement of μ e could be explained under the framework of electrons transferring from the InP sub-channel into InGaAs channel region due to the energy band bending at the surface region caused by SiN passivation, which is further confirmed by low temperature photoluminescence measurements

  2. A possible high-mobility signal in bulk MoTe2: Temperature independent weak phonon decay

    Titao Li

    2016-11-01

    Full Text Available Layered transition metal dichalcogenides (TMDs have attracted great attention due to their non-zero bandgap for potential application in high carrier mobility devices. Recent studies demonstrate that the carrier mobility of MoTe2 would decrease by orders of magnitude when used for few-layer transistors. As phonon scattering has a significant influence on carrier mobility of layered material, here, we first reported temperature-dependent Raman spectra of bulk 2H-MoTe2 from 80 to 300 K and discovered that the phonon lifetime of both E12g and A1g vibration modes are independent with temperature. These results were explained by the weak phonon decay in MoTe2. Our results imply the existence of a carrier mobility higher than the theoretical value in intrinsic bulk 2H-MoTe2 and the feasibility to obtain MoTe2-based transistors with sufficiently high carrier mobility.

  3. Electronic and optical properties of graphene-like InAs: An ab initio study

    Sohrabi, Leila; Boochani, Arash; Ali Sebt, S.; Mohammad Elahi, S.

    2018-03-01

    The present work initially investigates structural, optical, and electronic properties of graphene-like InAs by using the full potential linear augmented plane wave method in the framework of density functional theory and is then compared with the bulk Indium Arsenide in the wurtzite phase. The lattice parameters are optimized with GGA-PBE and LDA approximations for both 2D- and 3D-InAs. In order to study the electronic properties of graphene-like InAs and bulk InAs in the wurtzite phase, the band gap is calculated by GGA-PBG and GGA-EV approximations. Moreover, optical parameters of graphene-like InAs and bulk InAs such as the real and imaginary parts of dielectric function, electron energy loss function, refractivity, extinction and absorption coefficients, and optical conductivity are investigated. Plasmonic frequencies of 2D- and 3D-InAs are also calculated by using maximum electron energy loss function and the roots of the real part of the dielectric function.

  4. DESIGN APPLICATIONS BASED ON WEB MOBILE AT GAYA BARU SENIOR HIGH SCHOOL, CENTRAL LAMPUNG REGENCY AS PROMOTIONAL MEDIA

    Ahmad Yudi

    2017-05-01

    Full Text Available Gaya Baru Senior High School is one of the educational institutions in Lampung which is a less favorite institution in the area is precisely located in the district of Seputih Surabaya Central Lampung Regency. Gaya Baru Senior High School has already had a website but not many known. This Senior High School is also no information system through mobile web to promote the institution. Nevertheless, in its development, students or community want to find information about the school can be directly through the mobile web application. So in its development requires fast service. From research that conducted in Gaya Baru High School, existence of new mobile web application system will facilitate student or society of that area, especially in subdistrict Seputih Surabaya district Central Lampung, and present information about the info about situation in high school of new style it can be accessed directly through the mobile web media.

  5. Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields

    Palmer, Martin John

    2001-01-01

    Silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) for high speed, high current applications are rapidly approaching the physical and financial limits of the technology. This opens opportunities for the incorporation of materials with intrinsically better transport characteristics. An alloy of silicon and germanium is one such material that is gaining much recognition as the active component of MOSFETs and as the secondary structures (such as the gate electrode). This work examines a batch of buried channel Si 0.64 Ge 0.36 p-MOSFETs, with a minimum effective length of 0.35 μm, under different bias conditions and at different temperatures. High current and transconductance enhancements are apparent at long gate lengths. The carrier mobility is up to a factor of 2.5 times that of silicon at room temperature and 7.5 times at 4 K. A clear trend of decreasing peak mobility with decreasing silicon cap thickness is evident. Simulations show that scattering caused by the roughness of the SiO 2 /Si interface dominates, rather than alloy scattering or Si/SiGe roughness, even for a buried channel. This scattering increases with the proximity of the carriers to the interface. An increase of interface trap density with decreasing cap thickness, demonstrates that segregated germanium exists some distance into the cap and interferes with the oxidation process. This will increase scattering through increased SiO 2 /Si roughness and increased trapped charge. The short channel, high field results are comparable or slightly worse than those of silicon due to lower saturation drift velocity. However, fitting to a drift-diffusion model shows an apparent increase in saturation velocity for short channels, especially at low temperatures. This effect correlates with the low field mobility and is greater for devices containing SiGe. This is an indication of velocity overshoot, which may enhance the performance of SiGe MOSFETs at deep submicron gate lengths. (author)

  6. Ambient temperature dependence on emission spectrum of InAs quantum dots

    Ngo, C.Y.; Yoon, S.F. [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore); Chua, S.J. [Institute of Materials Research and Engineering, Faculty of Engineering (Singapore)

    2009-04-15

    Semiconductor superluminescent diodes (SLDs) are important broadband light source for fiber optic gyroscope and biomedical imaging. Quantum dots (QDs) have been proposed to be the best candidate for broadband light sources due to the inhomogeneous broadening of the gain spectrum as a result of the inherited size inhomogeneity of the self-assembled QD growth. In this work, the effect of ambient temperature (25-100 C) on the emission spectrum of InAs QDs with wideband emission was investigated. It was found that the full-width at half-maximum (FWHM) of the photoluminescence (PL) spectra remains more than 125 nm throughout the temperature range, and the redshift as function of temperature is approximately 0.27 meV/K. Activation energy of 270 meV is extracted from the Arrhenius plot and the PL quenching at high temperature is attributed to thermally induced carriers escaping out of the In{sub 0.15}Ga{sub 0.85}As strain-reducing layer. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  8. Channeling study of laser-induced defect generation in InP and InAs

    Burdel', K.K.; Kashkarov, P.K.; Timoshenko, V.Yu.; Chechenin, N.G.

    1992-01-01

    Damage production in InP and InAs single crystals induced by a ruby-laser pulse irradiation with τ p =20 ms in the energy density region W=0.05-1.0 J/cm 2 is studied by the channeling and Rutherford backscattering techniques. The defect generation threshold was determined to be equal to 0.2 J/cm 2 and 0.55 J/cm 2 for InP and InAs crystals, respectively. Stoichiometric defects in InP crystals were observed at W>=0.5 J/cm 2 . The temperature fields in InP and InAs under laser irradiation were calculated. The experimental observations are considered as a result of a selective evaporation of the components from the melt

  9. InAs migration on released, wrinkled InGaAs membranes used as virtual substrate

    Filipe Covre da Silva, S; Lanzoni, E M; De Araujo Barboza, V; Deneke, Ch; Malachias, A; Kiravittaya, S

    2014-01-01

    Partly released, relaxed and wrinkled InGaAs membranes are used as virtual substrates for overgrowth with InAs. Such samples exhibit different lattice parameters for the unreleased epitaxial parts, the released flat, back-bond areas and the released wrinkled areas. A large InAs migration towards the released membrane is observed with a material accumulation on top of the freestanding wrinkles during overgrowth. A semi-quantitative analysis of the misfit strain shows that the material migrates to the areas of the sample with the lowest misfit strain, which we consider as the areas of the lowest chemical potential of the surface. Material migration is also observed for the edge-supported, freestanding InGaAs membranes found on these samples. Our results show that the released, wrinkled nanomembranes offer a growth template for InAs deposition that fundamentally changes the migration behavior of the deposited material on the growth surface. (paper)

  10. Growth-interruption-induced low-density InAs quantum dots on GaAs

    Li, L. H.; Alloing, B.; Chauvin, N.; Fiore, A.; Patriarche, G.

    2008-01-01

    We investigate the use of growth interruption to obtain low-density InAs quantum dots (QDs) on GaAs. The process was realized by Ostwald-type ripening of a thin InAs layer. It was found that the optical properties of the QDs as a function of growth interruption strongly depend on InAs growth rate. By using this approach, a low density of QDs (4 dots/μm 2 ) with uniform size distribution was achieved. As compared to QDs grown without growth interruption, a larger energy separation between the QD confined levels was observed, suggesting a situation closer to the ideal zero-dimensional system. Combining with an InGaAs capping layer such as In-rich QDs enable 1.3 μm emission at 4 K

  11. Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor.

    Hung, Wen-Yi; Chiang, Pin-Yi; Lin, Shih-Wei; Tang, Wei-Chieh; Chen, Yi-Ting; Liu, Shih-Hung; Chou, Pi-Tai; Hung, Yi-Tzu; Wong, Ken-Tsung

    2016-02-01

    A star-shaped 1,3,5-triazine/cyano hybrid molecule CN-T2T was designed and synthesized as a new electron acceptor for efficient exciplex-based OLED emitter by mixing with a suitable electron donor (Tris-PCz). The CN-T2T/Tris-PCz exciplex emission shows a high ΦPL of 0.53 and a small ΔET-S = -0.59 kcal/mol, affording intrinsically efficient fluorescence and highly efficient exciton up-conversion. The large energy level offsets between Tris-PCz and CN-T2T and the balanced hole and electron mobility of Tris-PCz and CN-T2T, respectively, ensuring sufficient carrier density accumulated in the interface for efficient generation of exciplex excitons. Employing a facile device structure composed as ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm), in which the electron-hole capture is efficient without additional carrier injection barrier from donor (or acceptor) molecule and carriers mobilities are balanced in the emitting layer, leads to a highly efficient green exciplex OLED with external quantum efficiency (EQE) of 11.9%. The obtained EQE is 18% higher than that of a comparison device using an exciplex exhibiting a comparable ΦPL (0.50), in which TCTA shows similar energy levels but higher hole mobility as compared with Tris-PCz. Our results clearly indicate the significance of mobility balance in governing the efficiency of exciplex-based OLED. Exploiting the Tris-PCz:CN-T2T exciplex as the host, we further demonstrated highly efficient yellow and red fluorescent OLEDs by doping 1 wt % Rubrene and DCJTB as emitter, achieving high EQE of 6.9 and 9.7%, respectively.

  12. High mobility AlGaN/GaN devices for β{sup −}-dosimetry

    Schmid, Martin; Howgate, John; Ruehm, Werner [Helmholtz Zentrum München, Ingolstädter Landstraße 1, 85764 Neuherberg (Germany); Thalhammer, Stefan, E-mail: stefan.thalhammer@physik.uni-augsburg.de [Universität Augsburg, Universitätsstraße 1, 86159 Augsburg (Germany)

    2016-05-21

    There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β{sup −}-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β{sup −}-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β{sup −}-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β{sup −}-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

  13. High mobility AlGaN/GaN devices for β"−-dosimetry

    Schmid, Martin; Howgate, John; Ruehm, Werner; Thalhammer, Stefan

    2016-01-01

    There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β"−-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β"−-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β"−-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β"−-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

  14. Dedicated mobile high resolution prostate PET imager with an insertable transrectal probe

    Majewski, Stanislaw; Proffitt, James

    2010-12-28

    A dedicated mobile PET imaging system to image the prostate and surrounding organs. The imaging system includes an outside high resolution PET imager placed close to the patient's torso and an insertable and compact transrectal probe that is placed in close proximity to the prostate and operates in conjunction with the outside imager. The two detector systems are spatially co-registered to each other. The outside imager is mounted on an open rotating gantry to provide torso-wide 3D images of the prostate and surrounding tissue and organs. The insertable probe provides closer imaging, high sensitivity, and very high resolution predominately 2D view of the prostate and immediate surroundings. The probe is operated in conjunction with the outside imager and a fast data acquisition system to provide very high resolution reconstruction of the prostate and surrounding tissue and organs.

  15. N-polar GaN epitaxy and high electron mobility transistors

    Wong, Man Hoi; Keller, Stacia; Dasgupta, Nidhi Sansaptak; Denninghoff, Daniel J; Kolluri, Seshadri; Brown, David F; Lu, Jing; Fichtenbaum, Nicholas A; Ahmadi, Elaheh; DenBaars, Steven P; Speck, James S; Mishra, Umesh K; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth

    2013-01-01

    This paper reviews the progress of N-polar (0001-bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized. (invited review)

  16. High-level waste tank modifications, installation of mobilization equipment/check out

    Schiffhauer, M.A.; Thompson, S.C.

    1992-01-01

    PUREX high-level waste (HLW) is contained at the West Valley Demonstration Project (WVDP) in an underground carbon-steel storage tank. The HLW consists of a precipitated sludge and an alkaline supernate. This report describes the system that the WVDP has developed and implemented to resuspend and wash the HLW sludge from the tank. The report discusses Sludge Mobilization and Wash System (SMWS) equipment design, installation, and testing. The storage tank required modifications to accommodate the SMWS. These modifications are discussed as well

  17. Conductance fluctuations in high mobility monolayer graphene: Nonergodicity, lack of determinism and chaotic behavior.

    da Cunha, C R; Mineharu, M; Matsunaga, M; Matsumoto, N; Chuang, C; Ochiai, Y; Kim, G-H; Watanabe, K; Taniguchi, T; Ferry, D K; Aoki, N

    2016-09-09

    We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage and magnetic field were obtained to check for ergodicity. Non-linear dynamics concepts were used to study the nature of these fluctuations. The distribution of eigenvalues was estimated from the conductance fluctuations with Gaussian kernels and it indicates that the carrier motion is chaotic at low temperatures. We argue that a two-phase dynamical fluid model best describes the transport in this system and can be used to explain the violation of the so-called ergodic hypothesis found in graphene.

  18. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

    Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

  19. Mobile Workforce, Mobile Technology, Mobile Threats

    Garcia, J.

    2015-01-01

    Mobile technologies' introduction into the world of safeguards business processes such as inspection creates tremendous opportunity for novel approaches and could result in a number of improvements to such processes. Mobile applications are certainly the wave of the future. The success of the application ecosystems has shown that users want full fidelity, highly-usable, simple purpose applications with simple installation, quick responses and, of course, access to network resources at all times. But the counterpart to opportunity is risk, and the widespread adoption of mobile technologies requires a deep understanding of the threats and vulnerabilities inherent in mobile technologies. Modern mobile devices can be characterized as small computers. As such, the threats against computing infrastructure apply to mobile devices. Meanwhile, the attributes of mobile technology that make it such an obvious benefit over traditional computing platforms all have elements of risk: pervasive, always-on networking; diverse ecosystems; lack of centralized control; constantly shifting technological foundations; intense competition among competitors in the marketplace; the scale of the installation base (from millions to billions); and many more. This paper will explore the diverse and massive environment of mobile, the number of attackers and vast opportunities for compromise. The paper will explain how mobile devices prove valuable targets to both advanced and persistent attackers as well as less-skilled casual hackers. Organized crime, national intelligence agencies, corporate espionage are all part of the landscape. (author)

  20. Hall and thermoelectric evaluation of p-type InAs

    Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-15

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  1. Spin effects in InAs self-assembled quantum dots

    Brasil Maria

    2011-01-01

    Full Text Available Abstract We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs in the center of a GaAs quantum well (QW. We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

  2. Jezdecké stezky v kraji Vysočina

    Bendeová, Tereza

    2014-01-01

    This bachelor thesis discusses the topic of riding trails in the Vysočina region. At the beginning I discuss the role of equestrian tourism in the Czech Republic. There are briefly described origins and conditions of riding trails in the regions and also the list of the public support and grants for development of equestrian tourism. The next part focuses on chosen region and characterizes its natural and cultural heritage. There are also described several trails through the Vysočina region. ...

  3. Electronic Structures of Strained InAs x P1-x by Density Functional Theory.

    Lee, Seung Mi; Kim, Min-Young; Kim, Young Heon

    2018-09-01

    We investigated the effects of strain on the electronic structures of InAsxP1-x using quantum mechanical density functional theory calculations. The electronic band gap and electron effective mass decreased with the increase of the uniaxial tensile strain along the [0001] direction of wurtzite InAs0.75P0.25. Therefore, faster electron movements are expected. These theoretical results are in good agreement with the experimental measurements of InAs0.75P0.25 nanowire.

  4. Hall and thermoelectric evaluation of p-type InAs

    Wagener, M.C.; Wagener, V.; Botha, J.R.

    2009-01-01

    This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

  5. Appendicectomies in Albanians in Greece: outcomes in a highly mobile immigrant patient population

    2001-01-01

    Background Albanian immigrants in Greece comprise a highly mobile population with unknown health care profile. We aimed to assess whether these immigrants were more or less likely to undergo laparotomy for suspected appendicitis with negative findings (negative appendicectomy), by performing a controlled study with individual (1:4) matching. We used data from 6 hospitals in the Greek prefecture of Epirus that is bordering Albania. Results Among a total of 2027 non-incidental appendicectomies for suspected appendicitis performed in 1994-1999, 30 patients with Albanian names were matched (for age, sex, time of operation and hospital) to 120 patients with Greek names. The odds for a negative appendicectomy were 3.4-fold higher (95% confidence interval [CI], 1.24-9.31, p = 0.02) in Albanian immigrants than in matched Greek-name subjects. The difference was most prominent in men (odds ratio 20.0, 95% CI, 1.41-285, p = 0.02) while it was not formally significant in women (odds ratio 1.56, 95% CI, 0.44-5.48). The odds for perforation were 1.25-fold higher in Albanian-name immigrants than in Greek-name patients (95% CI 0.44- 3.57). Conclusions Albanian immigrants in Greece are at high risk for negative appendicectomies. Socioeconomic, cultural and language parameters underlying health care inequalities in highly mobile immigrant populations need better study. PMID:11472640

  6. Automatic camera to laser calibration for high accuracy mobile mapping systems using INS

    Goeman, Werner; Douterloigne, Koen; Gautama, Sidharta

    2013-09-01

    A mobile mapping system (MMS) is a mobile multi-sensor platform developed by the geoinformation community to support the acquisition of huge amounts of geodata in the form of georeferenced high resolution images and dense laser clouds. Since data fusion and data integration techniques are increasingly able to combine the complementary strengths of different sensor types, the external calibration of a camera to a laser scanner is a common pre-requisite on today's mobile platforms. The methods of calibration, nevertheless, are often relatively poorly documented, are almost always time-consuming, demand expert knowledge and often require a carefully constructed calibration environment. A new methodology is studied and explored to provide a high quality external calibration for a pinhole camera to a laser scanner which is automatic, easy to perform, robust and foolproof. The method presented here, uses a portable, standard ranging pole which needs to be positioned on a known ground control point. For calibration, a well studied absolute orientation problem needs to be solved. In many cases, the camera and laser sensor are calibrated in relation to the INS system. Therefore, the transformation from camera to laser contains the cumulated error of each sensor in relation to the INS. Here, the calibration of the camera is performed in relation to the laser frame using the time synchronization between the sensors for data association. In this study, the use of the inertial relative movement will be explored to collect more useful calibration data. This results in a better intersensor calibration allowing better coloring of the clouds and a more accurate depth mask for images, especially on the edges of objects in the scene.

  7. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

    Zan, Hsiao-Wen; Yeh, Chun-Cheng; Meng, Hsin-Fei; Tsai, Chuang-Chuang; Chen, Liang-Hao

    2012-07-10

    An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  10. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Chao-Ming Hsu

    2015-05-01

    Full Text Available High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  11. Phosphorene: an unexplored 2D semiconductor with a high hole mobility.

    Liu, Han; Neal, Adam T; Zhu, Zhen; Luo, Zhe; Xu, Xianfan; Tománek, David; Ye, Peide D

    2014-04-22

    We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31-0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm(2)/V·s, and an on/off ratio of up to 10(4). We demonstrate the possibility of phosphorene integration by constructing a 2D CMOS inverter consisting of phosphorene PMOS and MoS2 NMOS transistors.

  12. Achieving high mobility ZnO : Al at very high growth rates by dc filtered cathodic arc deposition

    Mendelsberg, R J; Lim, S H N; Wallig, J; Anders, A; Zhu, Y K; Milliron, D J

    2011-01-01

    Achieving a high growth rate is paramount for making large-area transparent conducting oxide coatings at a low cost. Unfortunately, the quality of thin films grown by most techniques degrades as the growth rate increases. Filtered dc cathodic arc is a lesser known technique which produces a stream of highly ionized plasma, in stark contrast to the neutral atoms produced by standard sputter sources. Ions bring a large amount of potential energy to the growing surface which is in the form of heat, not momentum. By minimizing the distance from cathode to substrate, the high ion flux gives a very high effective growth temperature near the film surface without causing damage from bombardment. The high surface temperature is a direct consequence of the high growth rate and allows for high-quality crystal growth. Using this technique, 500-1300 nm thick and highly transparent ZnO : Al films were grown on glass at rates exceeding 250 nm min -1 while maintaining resistivity below 5 x 10 -4 Ω cm with electron mobility as high as 60 cm 2 V -1 s -1 . (fast track communication)

  13. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    Vasil’evskii, I. S.; Galiev, G. B.; Klimov, E. A.; Požela, K.; Požela, J.; Jucienė, V.; Sužiedėlis, A.; Žurauskienė, N.; Keršulis, S.; Stankevič, V.

    2011-01-01

    An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In 0.8 Ga 0.2 As/In 0.7 Al 0.3 As metamorphic structure with a high molar fraction of In (0.7–0.8) is as high as 12.3 × 10 3 cm 2 V −1 s −1 at room temperature. An increase in the electron mobility by a factor of 1.1–1.4 is attained upon the introduction of thin (1–3 nm) InAs layers into a quantum well of selectively doped In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructures. A maximal drift velocity attains 2.5 × 10 7 cm/s in electric fields of 2–5 kV/cm. The threshold field F th for the intervalley Γ-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5–3. The effect of two- to threefold decrease in the threshold field F th in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well.

  14. Patient-Facing Mobile Apps to Treat High-Need, High-Cost Populations: A Scoping Review.

    Singh, Karandeep; Drouin, Kaitlin; Newmark, Lisa P; Filkins, Malina; Silvers, Elizabeth; Bain, Paul A; Zulman, Donna M; Lee, Jae-Ho; Rozenblum, Ronen; Pabo, Erika; Landman, Adam; Klinger, Elissa V; Bates, David W

    2016-12-19

    Self-management is essential to caring for high-need, high-cost (HNHC) populations. Advances in mobile phone technology coupled with increased availability and adoption of health-focused mobile apps have made self-management more achievable, but the extent and quality of the literature supporting their use is not well defined. The purpose of this review was to assess the breadth, quality, bias, and types of outcomes measured in the literature supporting the use of apps targeting HNHC populations. Data sources included articles in PubMed and MEDLINE (National Center for Biotechnology Information), EMBASE (Elsevier), the Cochrane Central Register of Controlled Trials (EBSCO), Web of Science (Thomson Reuters), and the NTIS (National Technical Information Service) Bibliographic Database (EBSCO) published since 2008. We selected studies involving use of patient-facing iOS or Android mobile health apps. Extraction was performed by 1 reviewer; 40 randomly selected articles were evaluated by 2 reviewers to assess agreement. Our final analysis included 175 studies. The populations most commonly targeted by apps included patients with obesity, physical handicaps, diabetes, older age, and dementia. Only 30.3% (53/175) of the apps studied in the reviewed literature were identifiable and available to the public through app stores. Many of the studies were cross-sectional analyses (42.9%, 75/175), small (median number of participants=31, interquartile range 11.0-207.2, maximum 11,690), or performed by an app's developers (61.1%, 107/175). Of the 175 studies, only 36 (20.6%, 36/175) studies evaluated a clinical outcome. Most apps described in the literature could not be located on the iOS or Android app stores, and existing research does not robustly evaluate the potential of mobile apps. Whereas apps may be useful in patients with chronic conditions, data do not support this yet. Although we had 2-3 reviewers to screen and assess abstract eligibility, only 1 reviewer abstracted

  15. General factors that affects the increase of population mobility and principles of optimization of high-speed passenger transportations

    Momot, A.

    2014-01-01

    Purpose. Analyze the main factors that influence the increased mobility of the population in the transport market of Ukraine. Methods. The article uses an improved method of determining the optimal areas of high-speed passenger trains and determines the value of rational transportation of passengers in different directions of speed traffic, as well as the method of marginal income. Results. In this article we analyzed seven major factors that influence the increased mobility of the population...

  16. Mobile Phone Use in a Pennsylvania Public High School: Does Policy Inform Practice?

    Thackara, Susan Tomchak

    2014-01-01

    Though many American educators embrace technology in classrooms, administrators can create policies that inhibit technology such as mobile phone use in classrooms or on district property. These policies range from restrictive with no mobile phone use permitted, to liberal in which unrestricted use of mobile phones is allowed. The purpose of this…

  17. Hemoadsorption of high-mobility-group box 1 using a porous polymethylmethacrylate fiber in a swine acute liver failure model.

    Amemiya, Ryusuke; Shinoda, Masahiro; Yamada, Masayuki; Ueno, Yoshiyuki; Shimada, Kaoru; Fujieda, Hiroaki; Yagi, Hiroshi; Mizota, Takamasa; Nishiyama, Ryo; Oshima, Go; Yamada, Shingo; Matsubara, Kentaro; Abe, Yuta; Hibi, Taizo; Kitago, Minoru; Obara, Hideaki; Itano, Osamu; Kitagawa, Yuko

    2018-04-01

    High-mobility-group box chromosomal protein 1 has been identified as an important mediator of various kinds of acute and chronic inflammation. In this study, we aimed to develop a column that effectively adsorbs high-mobility-group box chromosomal protein 1 by altering the pore size of the fiber. First, we produced three types of porous polymethylmethacrylate fiber by altering the concentration of polymethylmethacrylate dissolved in dimethylsulfoxide. We then selected a fiber based on the results of an in vitro incubation test of high-mobility-group box chromosomal protein 1 adsorption. Using the selected fiber, we constructed a new column and tested its high-mobility-group box chromosomal protein 1 adsorption capacity during 4-h extracorporeal hemoperfusion in a swine acute liver failure model. Electron microscope observation showed that the three types of fibers had different pore sizes on the surface and in cross section, which were dependent on the concentration of polymethylmethacrylate. In the in vitro incubation test, fiber with moderate-sized pores demonstrated the highest adsorption capacity. In the in vivo hemoperfusion study, the ratio of the high-mobility-group box chromosomal protein 1 concentration at the outlet versus the inlet of the column was significantly lower with the new column than with the control column during 4-h extracorporeal hemoperfusion. The normalized plasma level of high-mobility-group box chromosomal protein 1 at 12 h after the completion of hemoperfusion was significantly lower with the new column than with the control column. The newly developed polymethylmethacrylate column adsorbs high-mobility-group box chromosomal protein 1 during hemoperfusion in swine ALF model.

  18. A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

    Mohammad Javad Sharifi

    2009-01-01

    Full Text Available A new structure for an exclusive-OR (XOR gate based on the resonant-tunneling high electron mobility transistor (RTHEMT is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

  19. High-Mobility, Ultrathin Organic Semiconducting Films Realized by Surface-Mediated Crystallization.

    Vladimirov, I; Kellermeier, M; Geßner, T; Molla, Zarah; Grigorian, S; Pietsch, U; Schaffroth, L S; Kühn, M; May, F; Weitz, R T

    2018-01-10

    The functionality of common organic semiconductor materials is determined by their chemical structure and crystal modification. While the former can be fine-tuned via synthesis, a priori control over the crystal structure has remained elusive. We show that the surface tension is the main driver for the plate-like crystallization of a novel small organic molecule n-type semiconductor at the liquid-air interface. This interface provides an ideal environment for the growth of millimeter-sized semiconductor platelets that are only few nanometers thick and thus highly attractive for application in transistors. On the basis of the novel high-performance perylene diimide, we show in as-grown, only 3 nm thin crystals electron mobilities of above 4 cm 2 /(V s) and excellent bias stress stability. We suggest that the established systematics on solvent parameters can provide the basis of a general framework for a more deterministic crystallization of other small molecules.

  20. Advertising on mobile applications

    Sobolevsky, Alexandr

    2015-01-01

    The article analyzes the new method of mobile advertising. Advertising in mobile applications - a subspecies of mobile marketing, where advertising is distributed using mobile phones and smartphones. Ad placement is going on inside of applications and games for smartphones. It has a high potential due to the large number of mobile phone users (over 6.5 billion in 2013).

  1. Does a Mobile Phone Depression-Screening App Motivate Mobile Phone Users With High Depressive Symptoms to Seek a Health Care Professional's Help?

    BinDhim, Nasser F; Alanazi, Eman M; Aljadhey, Hisham; Basyouni, Mada H; Kowalski, Stefan R; Pont, Lisa G; Shaman, Ahmed M; Trevena, Lyndal; Alhawassi, Tariq M

    2016-06-27

    The objective of disease screening is to encourage high-risk subjects to seek health care diagnosis and treatment. Mobile phone apps can effectively screen mental health conditions, including depression. However, it is not known how effective such screening methods are in motivating users to discuss the obtained results of such apps with health care professionals. Does a mobile phone depression-screening app motivate users with high depressive symptoms to seek health care professional advice? This study aimed to address this question. This was a single-cohort, prospective, observational study of a free mobile phone depression app developed in English and released on Apple's App Store. Apple App Store users (aged 18 or above) in 5 countries, that is, Australia, Canada, New Zealand (NZ), the United Kingdom (UK), and the United States (US), were recruited directly via the app's download page. The participants then completed the Patient Health Questionnaire (PHQ-9), and their depression screening score was displayed to them. If their score was 11 or above and they had never been diagnosed with depression before, they were advised to take their results to their health care professional. They were to follow up after 1 month. A group of 2538 participants from the 5 countries completed PHQ-9 depression screening with the app. Of them, 322 participants were found to have high depressive symptoms and had never been diagnosed with depression, and received advice to discuss their results with health care professionals. About 74% of those completed the follow-up; approximately 38% of these self-reported consulting their health care professionals about their depression score. Only positive attitude toward depression as a real disease was associated with increased follow-up response rate (odds ratio (OR) 3.2, CI 1.38-8.29). A mobile phone depression-screening app motivated some users to seek a depression diagnosis. However, further study should investigate how other app users use

  2. Measurement of negative ion mobility in O2 at high pressures using a point plate gap as an ion detector

    Okuyama, Y; Kimura, T; Suzuki, S; Itoh, H

    2012-01-01

    This paper describes the experimental results for negative ion mobility in O 2 at 0.5-2.0 atm. The ion mobility is observed using a high-pressure ion drift tube with a positive corona gap (Geiger counter), which is constructed from a point plate gap and acts as a negative ion detector. The variation of waveforms in the burst pulse is observed by varying the voltage applied to the ion detector to find the optimum voltage that must be applied across the ion detector in O 2 . This is investigated carefully to ensure the precise determination of mobility. The distortion of the electric field near the mesh electrode, which operates as the cathode of the ion detector and as the anode of the ion drift gap, is then examined to determine the optimum applied voltage to suppress its effect on the measurement of mobility. The mobility is subsequently measured at a reduced electric field intensity of 2.83 × 10 -3 to 2.83. The observed mobility of 2.31 ± 0.03 cm 2 V -1 s -1 in O 2 is concluded to be that of O 2 - . This value is also obtained in experiments over a wide range of gas pressures (0.5-2.0 atm) and drift lengths (1.00-9.00 cm). The mobilities of O 3 - and O - are also obtained experimentally. (paper)

  3. Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials

    Nassar, Joanna M.

    2014-05-01

    For the last four decades, Si CMOS technology has been advancing with Moore’s law prediction, working itself down to the sub-20 nm regime. However, fundamental problems and limitations arise with the down-scaling of transistors and thus new innovations needed to be discovered in order to further improve device performance without compromising power consumption and size. Thus, a lot of studies have focused on the development of new CMOS compatible architectures as well as the discovery of new high mobility channel materials that will allow further miniaturization of CMOS transistors and improvement of device performance. Pushing the limits even further, flexible and foldable electronics seem to be the new attractive topic. By being able to make our devices flexible through a CMOS compatible process, one will be able to integrate hundreds of billions of more transistors in a small volumetric space, allowing to increase the performance and speed of our electronics all together with making things thinner, lighter, smaller and even interactive with the human skin. Thus, in this thesis, we introduce for the first time a cost-effective CMOS compatible approach to make high-k/metal gate devices on flexible Germanium (Ge) and Silicon-Germanium (SiGe) platforms. In the first part, we will look at the various approaches in the literature that has been developed to get flexible platforms, as well as we will give a brief overview about epitaxial growth of Si1-xGex films. We will also examine the electrical properties of the Si1-xGex alloys up to Ge (x=1) and discuss how strain affects the band structure diagram, and thus the mobility of the material. We will also review the material growth properties as well as the state-of-the-art results on high mobility metal-oxide semiconductor capacitors (MOSCAPs) using strained SiGe films. Then, we will introduce the flexible process that we have developed, based on a cost-effective “trench-protect-release-reuse” approach, utilizing

  4. Quantification of Discrete Oxide and Sulfur Layers on Sulfur-Passivated InAs by XPS

    Petrovykh, D. Y; Sullivan, J. M; Whitman, L. J

    2005-01-01

    .... The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic layer-cake structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick...

  5. Charge pumping in InAs nanowires by surface acoustic waves

    Roddaro, Stefano; Strambini, Elia; Romeo, Lorenzo; Piazza, Vincenzo; Nilsson, Kristian; Samuelson, Lars; Beltram, Fabio

    2010-01-01

    We investigate the interaction between surface acoustic waves on a piezoelectric LiNbO3 substrate and charge carriers in InAs nanowire transistors. Interdigital transducers are used to excite electromechanical waves on the chip surface and their influence on the transport in the nanowire devices is

  6. Electron Spin Polarization and Detection in InAs Quantum Dots Through p-Shell Trions

    2010-01-08

    optical control of spin states in quantum dots. II. EXPERIMENT The QD sample consists of 20 layers of InAs QDs, grown by molecular -beam epitaxy through...anisotropic 2D harmonic poten- tials. The electrons and holes are described by Fock- Darwin states harmonic oscillators with lateral sizes ax and ay in this

  7. Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

    Albert, F.; Stobbe, Søren; Schneider, C.

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  8. Energy Band Structure Studies Of Zinc-Blende GaAs and InAs ...

    A self-consistent calculation of the structural and electronic properties of zinc blende GaAs and InAs has been carried out. The calculations were done using the full potential-linearized augmented plane wave (FPLAPW) method within the density functional theory (DFT). The exchange-correlation energy used is the ...

  9. Diameter dependence of the thermal conductivity of InAs nanowires

    Swinkels, M.Y.; van Delft, M.R.; Oliveira, D.S.; Cavalli, A.; Zardo, I.; van der Heijden, R.W.; Bakkers, E.P.A.M.

    2015-01-01

    The diameter dependence of the thermal conductivity of InAs nanowires in the range of 40–1500 nm has been measured. We demonstrate a reduction in thermal conductivity of 80% for 40 nm nanowires, opening the way for further design strategies for nanoscaled thermoelectric materials. Furthermore, we

  10. Study of electron transport in n-type InAs substrate by Monte Carlo ...

    It is therefore an iterative process made up from a whole coasting flights stopped by acoustics interactions, polar and non polar optics, piezoelectric, inter-valley, impurity, ionization and surface. By applying this method to the III-V material, case of InAs, we have described the behavior of the carriers from dynamic and ...

  11. In-plane heterostructures of Sb/Bi with high carrier mobility

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  12. Solution-processable ambipolar diketopyrrolopyrrole-selenophene polymer with unprecedentedly high hole and electron mobilities.

    Lee, Junghoon; Han, A-Reum; Kim, Jonggi; Kim, Yiho; Oh, Joon Hak; Yang, Changduk

    2012-12-26

    There is a fast-growing demand for polymer-based ambipolar thin-film transistors (TFTs), in which both n-type and p-type transistor operations are realized in a single layer, while maintaining simplicity in processing. Research progress toward this end is essentially fueled by molecular engineering of the conjugated backbones of the polymers and the development of process architectures for device fabrication, which has recently led to hole and electron mobilities of more than 1.0 cm(2) V(-1) s(-1). However, ambipolar polymers with even higher performance are still required. By taking into account both the conjugated backbone and side chains of the polymer component, we have developed a dithienyl-diketopyrrolopyrrole (TDPP) and selenophene containing polymer with hybrid siloxane-solubilizing groups (PTDPPSe-Si). A synergistic combination of rational polymer backbone design, side-chain dynamics, and solution processing affords an enormous boost in ambipolar TFT performance, resulting in unprecedentedly high hole and electron mobilities of 3.97 and 2.20 cm(2) V(-1) s(-1), respectively.

  13. Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

    Mejia, Israel I.; Salas Villaseñ or, Ana L.; Cha, Dong Kyu; Alshareef, Husam N.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo

    2013-01-01

    We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

  14. High Purity Germanium Detector as part of Health Canada's Mobile Nuclear Laboratory

    Stocki, Trevor J.; Bouchard, Claude; Rollings, John; Boudreau, Marc-Oliver; McCutcheon- Wickham, Rory; Bergman, Lauren [Radiation Protection Bureau, Health Canada, AL6302D, 775 Brookfield Road, Ottawa, K1A 0K9 (Canada)

    2014-07-01

    In the event of a nuclear emergency on Canadian soil, Health Canada has designed and equipped two Mobile Nuclear Labs (MNLs) which can be deployed near a radiological accident site to provide radiological measurement capabilities. These measurements would help public authorities to make informed decisions for radiation protection recommendations. One of the MNLs has been outfitted with a High Purity Germanium (HPGe) detector within a lead castle, which can be used for identification as well as quantification of gamma emitting radioisotopes in contaminated soil, water, and other samples. By spring 2014, Health Canada's second MNL will be equipped with a similar detector to increase sample analysis capacity and also provide redundancy if one of the detectors requires maintenance. The Mobile Nuclear Lab (MNL) with the HPGe detector has been successfully deployed in the field for various exercises. One of these field exercises was a dirty bomb scenario where an unknown radioisotope required identification. A second exercise was an inter-comparison between the measurements of spiked soil and water samples, by two field teams and a certified laboratory. A third exercise was the deployment of the MNL as part of a full scale nuclear exercise simulating an emergency at a Canadian nuclear power plant. The lessons learned from these experiences will be discussed. (authors)

  15. Environmental stability of high-mobility indium-oxide based transparent electrodes

    Thanaporn Tohsophon

    2015-11-01

    Full Text Available Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In2O3 (ITO, H-doped In2O3 (IO:H, and Zn-doped In2O3 (IZO electrodes under damp heat (DH conditions (85 °C, 85% relative humidity. ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (Rs degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% Rs degradation, due to losses in electron Hall mobility (μHall. We propose that this degradation results from chemisorbed OH- or H2O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μHall strongly degrades during DH, the optical mobility (μoptical remains unchanged, indicating that the degradation mainly occurs at grain boundaries.

  16. Pathogenic and Ice-Nucleation Active (INA) Bacteria causing Dieback of Willows in Short Rotation Forestry

    Nejad, Pajand

    2005-03-01

    To find out whether bacteria isolated from diseased plant parts can be the main causal agent for the dieback appearing in Salix energy forestry plantations in Sweden during the last few years, and if the joint effects of bacteria and frost injury are synergistic, extensive sampling of shoots from diseased Salix plants was performed. We performed several laboratory and greenhouse investigations and used evaluation techniques on the functions of the Ice-Nucleation Active (INA) bacteria. We carried out a comparison between spring and autumn bacterial communities isolated from within (endophytically) and surface (epiphytically) plant tissues of Salix viminalis. Seasonal variation of bacteria in willow clones with different levels of frost sensitivity and symptoms of bacterial damage was also investigated. We further focussed on possible effect of fertilisation and nutrient availability on the bacterial community in relation to plant dieback in Estonian willow plantations. The identification and detection of INA bacteria which cause damage in combination with frost to willow (Salix spp) plants in late fall, winter and spring was performed using BIOLOG MicroPlate, biochemical tests, selective INA primers and 16S rDNA analysis. To distinguish the character for differentiation between these bacteria morphologically and with respect to growing ability different culture media were used. We studied the temperature, at which ice nucleation occurred for individual bacteria, estimated the population of INA bacteria, effect of growth limiting factors, and evaluated the effect of chemical and physical agents for disruption and possible inhibition of INA among individual bacterial strains. The concentration of carbon, nitrogen and phosphorus on INA is discussed. We demonstrate that among the bacterial isolates recovered from the willow plantations, there were many that were capable of ice nucleation at temperatures between -2 and -10 deg C, many that were capable of inducing a

  17. Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

    Lei Wen

    2011-01-01

    Full Text Available Abstract Catalyst-free, vertical array of InAs nanowires (NWs are grown on Si (111 substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed. PACS: 62.23.Hj; 81.07.Gf; 63.22.Gh; 61.46.Km

  18. Identification, Attribution, and Quantification of Highly Heterogeneous Methane Sources Using a Mobile Stable Isotope Analyzer

    Crosson, E.; Rella, C.; Cunningham, K.

    2012-04-01

    Despite methane's importance as a potent greenhouse gas second only to carbon dioxide in the magnitude of its contribution to global warming, natural contributions to the overall methane budget are only poorly understood. A big contributor to this gap in knowledge is the highly spatially and temporally heterogeneous nature of most natural (and for that matter anthropogenic) methane sources. This high degree of heterogeneity, where the methane emission rates can vary over many orders of magnitude on a spatial scale of meters or even centimeters, and over a temporal scale of minutes or even seconds, means that traditional methods of emissions flux estimation, such as flux chambers or eddy-covariance, are difficult or impossible to apply. In this paper we present new measurement methods that are capable of detecting, attributing, and quantifying emissions from highly heterogeneous sources. These methods take full advantage of the new class of methane concentration and stable isotope analyzers that are capable of laboratory-quality analysis from a mobile field platform in real time. In this paper we present field measurements demonstrating the real-time detection of methane 'hot spots,' attribution of the methane to a source process via real-time stable isotope analysis, and quantification of the emissions flux using mobile concentration measurements of the horizontal and vertical atmospheric dispersion, combined with atmospheric transport calculations. Although these techniques are applicable to both anthropogenic and natural methane sources, in this initial work we focus primarily on landfills and fugitive emissions from natural gas distribution, as these sources are better characterized, and because they provide a more reliable and stable source of methane for quantifying the measurement uncertainty inherent in the different methods. Implications of these new technologies and techniques are explored for the quantification of natural methane sources in a variety of

  19. Mobile Measurements of Methane Using High-Speed Open-Path Technology

    Burba, G. G.; Anderson, T.; Ediger, K.; von Fischer, J.; Gioli, B.; Ham, J. M.; Hupp, J. R.; Kohnert, K.; Levy, P. E.; Polidori, A.; Pikelnaya, O.; Price, E.; Sachs, T.; Serafimovich, A.; Zondlo, M. A.; Zulueta, R. C.

    2016-12-01

    Methane plays a critical role in the radiation balance, chemistry of the atmosphere, and air quality. The major anthropogenic sources of CH4 include oil and gas development sites, natural gas distribution networks, landfill emissions, and agricultural production. The majority of oil and gas and urban CH4 emission occurs via variable-rate point sources or diffused spots in topographically challenging terrains (e.g., street tunnels, elevated locations at water treatment plants, vents, etc.). Locating and measuring such CH4 emissions is challenging when using traditional micrometeorological techniques, and requires development of novel approaches. Landfill CH4 emissions traditionally assessed at monthly or longer time intervals are subject to large uncertainties because of the snapshot nature of the measurements and the barometric pumping phenomenon. The majority of agricultural and natural CH4 production occurs in areas with little infrastructure or easily available grid power (e.g., rice fields, arctic and boreal wetlands, tropical mangroves, etc.). A lightweight, high-speed, high-resolution, open-path technology was recently developed for eddy covariance measurements of CH4 flux, with power consumption 30-150 times below other available technologies. It was designed to run on solar panels or a small generator and be placed in the middle of the methane-producing ecosystem without a need for grid power. Lately, this instrumentation has been utilized increasingly more frequently outside of the traditional use on stationary flux towers. These novel approaches include measurements from various moving platforms, such as cars, aircraft, and ships. Projects included mapping of concentrations and vertical profiles, leak detection and quantification, mobile emission detection from natural gas-powered cars, soil CH4 flux surveys, etc. This presentation will describe key projects utilizing the novel lightweight low-power high-resolution open-path technology, and will highlight

  20. High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

    Xue Bai-Qing; Wang Sheng-Kai; Han Le; Chang Hu-Dong; Sun Bing; Zhao Wei; Liu Hong-Gang

    2013-01-01

    To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm 2 /V·s are demonstrated on a Ge (111) substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal—oxide—semiconductor (MOS) interface by analyzing the electrical characteristics of HCl- and (NH 4 ) 2 S-passivated samples. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

    2010-01-01

    Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

  2. [Mobile hospital -real time mobile telehealthcare system with ultrasound and CT van using high-speed satellite communication-].

    Takizawa, Masaomi; Miyashita, Toyohisa; Murase, Sumio; Kanda, Hirohito; Karaki, Yoshiaki; Yagi, Kazuo; Ohue, Toru

    2003-01-01

    A real-time telescreening system is developed to detect early diseases for rural area residents using two types of mobile vans with a portable satellite station. The system consists of a satellite communication system with 1.5Mbps of the JCSAT-1B satellite, a spiral CT van, an ultrasound imaging van with two video conference system, a DICOM server and a multicast communication unit. The video image and examination image data are transmitted from the van to hospitals and the university simultaneously. Physician in the hospital observes and interprets exam images from the van and watches the video images of the position of ultrasound transducer on screenee in the van. After the observation images, physician explains a results of the examination by the video conference system. Seventy lung CT screening and 203 ultrasound screening were done from March to June 2002. The trial of this real time screening suggested that rural residents are given better healthcare without visit to the hospital. And it will open the gateway to reduce the medical cost and medical divide between city area and rural area.

  3. Study of surface leakage current of AlGaN/GaN high electron mobility transistors

    Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

    2014-01-01

    Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

  4. Conductive atomic force microscopy study of InAs growth kinetics on vicinal GaAs (110)

    Tejedor, Paloma; Diez-Merino, Laura; Beinik, Igor; Teichert, Christian

    2009-01-01

    Conductive atomic force microscopy has been used to investigate the effect of atomic hydrogen and step orientation on the growth behavior of InAs on GaAs (110) misoriented substrates. Samples grown by conventional molecular beam epitaxy exhibit higher conductivity on [110]-multiatomic step edges, where preferential nucleation of InAs nanowires takes place by step decoration. On H-terminated substrates with triangular terraces bounded by [115]-type steps, three-dimensional InAs clusters grow selectively at the terrace apices as a result of a kinetically driven enhancement in upward mass transport via AsH x intermediate species and a reduction in the surface free energy.

  5. Cave bear (Ursus spelaeus Rosenmüller & Heinroth males' den from Velika Pećina in Duboka Near Kučevo, Eastern Serbia

    Dimitrijević Vesna M.

    2002-01-01

    Full Text Available More a 100 years after the first research in the cave Velika pećina in Duboka near Kučevo cave bear remains were discovered in a small chamber cut off from the passable channels by a 7 m high slope. A whole skull, bones of a forearm in articulation, and other skeleton parts were laying on the cave floor encrusted in travertine cover and in some places overgrown by stalagmites. Bones belonged to adult males, which found there the shelter to hibernate, in a short epizode that ended by closing the channels that once linked this part of the cave to a surface.

  6. An intelligent detection method for high-field asymmetric waveform ion mobility spectrometry.

    Li, Yue; Yu, Jianwen; Ruan, Zhiming; Chen, Chilai; Chen, Ran; Wang, Han; Liu, Youjiang; Wang, Xiaozhi; Li, Shan

    2018-04-01

    In conventional high-field asymmetric waveform ion mobility spectrometry signal acquisition, multi-cycle detection is time consuming and limits somewhat the technique's scope for rapid field detection. In this study, a novel intelligent detection approach has been developed in which a threshold was set on the relative error of α parameters, which can eliminate unnecessary time spent on detection. In this method, two full-spectrum scans were made in advance to obtain the estimated compensation voltage at different dispersion voltages, resulting in a narrowing down of the whole scan area to just the peak area(s) of interest. This intelligent detection method can reduce the detection time to 5-10% of that of the original full-spectrum scan in a single cycle.

  7. Photo-Detection on Narrow-Bandgap High-Mobility 2D Semiconductors

    Charnas, Adam; Qiu, Gang; Deng, Yexin; Wang, Yixiu; Du, Yuchen; Yang, Lingming; Wu, Wenzhuo; Ye, Peide

    Photo-detection and energy harvesting device concepts have been demonstrated widely in 2D materials such as graphene, TMDs, and black phosphorus. In this work, we demonstrate anisotropic photo-detection achieved using devices fabricated from hydrothermally grown narrow-bandgap high-mobility 2D semiconductor. Back-gated FETs were fabricated by transferring the 2D flakes onto a Si/SiO2 substrate and depositing various metal contacts across the flakes to optimize the access resistance for optoelectronic devices. Photo-responsivity was measured and mapped by slightly biasing the devices and shining a laser spot at different locations of the device to observe and map the resulting photo-generated current. Optimization of the Schottky barrier height for both n and p at the metal-2D interfaces using asymmetric contact engineering was performed to improve device performance.

  8. Provision of 3G Mobile Services in Sparsely Populated Areas Using High Altitude Platforms

    J. Holis

    2008-04-01

    Full Text Available This paper deals with the application of High Altitude Platforms for the provision of third generation mobile services in sparsely-populated areas or in developing countries. It focuses on the behavior of large cells provided via a multiple HAP deployment and shows the possibilities of using small cells located inside these large cells to serve hot-spot areas. The impact of the different types of HAP antenna masks and their adjustment on cell capacity and the quality of coverage is presented. The main parameter of the antenna radiation pattern under investigation is the power roll-off at the cell edge. Optimal values of this parameter are presented for different scenarios. Simulations of system level parameters were based on an iteration loops approach.

  9. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

    Imas Noviyana

    2017-06-01

    Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

  10. A southern African origin and cryptic structure in the highly mobile plains zebra

    Pedersen, Casper-Emil T; Albrechtsen, Anders; Etter, Paul D.

    2018-01-01

    insights into the past phylogeography of the species. The results identify a southern African location as the most likely source region from which all extant populations expanded around 370,000 years ago. We show evidence for inclusion of the extinct and phenotypically divergent quagga (Equus quagga quagga......The plains zebra (Equus quagga) is an ecologically important species of the African savannah. It is also one of the most numerous and widely distributed ungulates, and six subspecies have been described based on morphological variation. However, the within-species evolutionary processes have been...... difficult to resolve due to its high mobility and a lack of consensus regarding the population structure. We obtained genome-wide DNA polymorphism data from more than 167,000 loci for 59 plains zebras from across the species range, encompassing all recognized extant subspecies, as well as three mountain...

  11. Very high frame rate volumetric integration of depth images on mobile devices.

    Kähler, Olaf; Adrian Prisacariu, Victor; Yuheng Ren, Carl; Sun, Xin; Torr, Philip; Murray, David

    2015-11-01

    Volumetric methods provide efficient, flexible and simple ways of integrating multiple depth images into a full 3D model. They provide dense and photorealistic 3D reconstructions, and parallelised implementations on GPUs achieve real-time performance on modern graphics hardware. To run such methods on mobile devices, providing users with freedom of movement and instantaneous reconstruction feedback, remains challenging however. In this paper we present a range of modifications to existing volumetric integration methods based on voxel block hashing, considerably improving their performance and making them applicable to tablet computer applications. We present (i) optimisations for the basic data structure, and its allocation and integration; (ii) a highly optimised raycasting pipeline; and (iii) extensions to the camera tracker to incorporate IMU data. In total, our system thus achieves frame rates up 47 Hz on a Nvidia Shield Tablet and 910 Hz on a Nvidia GTX Titan XGPU, or even beyond 1.1 kHz without visualisation.

  12. New Mutation Identified in the SRY Gene High Mobility Group (HMG

    Feride İffet Şahin

    2013-06-01

    Full Text Available Mutations in the SRY gene prevent the differentiation of the fetal gonads to testes and cause developing female phenotype, and as a result sex reversal and pure gonadal dysgenesis (Swyer syndrome can be developed. Different types of mutations identified in the SRY gene are responsible for 15% of the gonadal dysgenesis. In this study, we report a new mutation (R132P in the High Mobility Group (HMG region of SRY gene was detected in a patient with primary amenorrhea who has 46,XY karyotype. This mutation leads to replacement of the polar and basic arginine with a nonpolar hydrophobic proline residue at aminoacid 132 in the nuclear localization signal region of the protein. With this case report we want to emphasize the genetic approach to the patients with gonadal dysgenesis. If Y chromosome is detected during cytogenetic analysis, revealing the presence of the SRY gene and identification of mutations in this gene by sequencing analysis is become important in.

  13. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

    Tan Ren-Bing; Qin Hua; Zhang Xiao-Yu; Xu Wen

    2013-01-01

    We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi—Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi—Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source—drain bias voltage besides the gate voltage (change of the electron density)

  14. Tooth enamel oxygen "isoscapes" show a high degree of human mobility in prehistoric Britain.

    Pellegrini, Maura; Pouncett, John; Jay, Mandy; Pearson, Mike Parker; Richards, Michael P

    2016-10-07

    A geostatistical model to predict human skeletal oxygen isotope values (δ 18 O p ) in Britain is presented here based on a new dataset of Chalcolithic and Early Bronze Age human teeth. The spatial statistics which underpin this model allow the identification of individuals interpreted as 'non-local' to the areas where they were buried (spatial outliers). A marked variation in δ 18 O p is observed in several areas, including the Stonehenge region, the Peak District, and the Yorkshire Wolds, suggesting a high degree of human mobility. These areas, rich in funerary and ceremonial monuments, may have formed focal points for people, some of whom would have travelled long distances, ultimately being buried there. The dataset and model represent a baseline for future archaeological studies, avoiding the complex conversions from skeletal to water δ 18 O values-a process known to be problematic.

  15. Tooth enamel oxygen “isoscapes” show a high degree of human mobility in prehistoric Britain

    Pellegrini, Maura; Pouncett, John; Jay, Mandy; Pearson, Mike Parker; Richards, Michael P.

    2016-10-01

    A geostatistical model to predict human skeletal oxygen isotope values (δ18Op) in Britain is presented here based on a new dataset of Chalcolithic and Early Bronze Age human teeth. The spatial statistics which underpin this model allow the identification of individuals interpreted as ‘non-local’ to the areas where they were buried (spatial outliers). A marked variation in δ18Op is observed in several areas, including the Stonehenge region, the Peak District, and the Yorkshire Wolds, suggesting a high degree of human mobility. These areas, rich in funerary and ceremonial monuments, may have formed focal points for people, some of whom would have travelled long distances, ultimately being buried there. The dataset and model represent a baseline for future archaeological studies, avoiding the complex conversions from skeletal to water δ18O values-a process known to be problematic.

  16. The role of high mobility group box 1(HMGB1)in the pathogenesis of kidney diseases

    Qingjie Chen; Xiaofeng Guan; Xiaocong Zuo; Jianglin Wang; Wenjun Yin

    2016-01-01

    High mobility group box 1(HMGB1) is a nuclear protein that can bind to DNA and act as a co-factor for gene transcription. When released into extracellular fluid, it plays a proinflammatory role by acting as a damage-associated molecular pattern molecule(DAMP)(also known as an alarmin) to initiate innate immune responses by activating multiple cell surface receptors such as the receptor for advanced glycation end-products(RAGE) and toll-like receptors(TLRs), TLR2, TLR4 or TLR9. This proinflammatory role is now considered to be important in the pathogenesis of a wide range of kidney diseases whether they result from hemodynamic changes, renal tubular epithelial cell apoptosis, kidney tissue fibrosis or inflammation. This review summarizes our current understanding of the role of HMGB1 in kidney diseases and how the HMGB1-mediated signaling pathway may constitute a new strategy for the treatment of kidney diseases.

  17. Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors

    Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Gwarek, W.

    2008-01-01

    Detection of 100 GHz electromagnetic radiation by a GaAs/AlGaAs high electron mobility field-effect transistor was investigated at 300 K as a function of the angle α between the direction of linear polarization of the radiation and the symmetry axis of the transistor. The angular dependence of the detected signal was found to be A 0 cos 2 (α-α 0 )+C with A 0 , α 0 , and C dependent on the electrical polarization of the transistor gate. This dependence is interpreted as due to excitation of two crossed phase-shifted oscillators. A response of the transistor chip (including bonding wires and the substrate) to 100 GHz radiation was numerically simulated. Results of calculations confirmed experimentally observed dependencies and showed that the two oscillators result from an interplay of 100 GHz currents defined by the transistor impedance together with bonding wires and substrate related modes

  18. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  19. Toolbox for Urban Mobility Simulation: High Resolution Population Dynamics for Global Cities

    Bhaduri, B. L.; Lu, W.; Liu, C.; Thakur, G.; Karthik, R.

    2015-12-01

    In this rapidly urbanizing world, unprecedented rate of population growth is not only mirrored by increasing demand for energy, food, water, and other natural resources, but has detrimental impacts on environmental and human security. Transportation simulations are frequently used for mobility assessment in urban planning, traffic operation, and emergency management. Previous research, involving purely analytical techniques to simulations capturing behavior, has investigated questions and scenarios regarding the relationships among energy, emissions, air quality, and transportation. Primary limitations of past attempts have been availability of input data, useful "energy and behavior focused" models, validation data, and adequate computational capability that allows adequate understanding of the interdependencies of our transportation system. With increasing availability and quality of traditional and crowdsourced data, we have utilized the OpenStreetMap roads network, and has integrated high resolution population data with traffic simulation to create a Toolbox for Urban Mobility Simulations (TUMS) at global scale. TUMS consists of three major components: data processing, traffic simulation models, and Internet-based visualizations. It integrates OpenStreetMap, LandScanTM population, and other open data (Census Transportation Planning Products, National household Travel Survey, etc.) to generate both normal traffic operation and emergency evacuation scenarios. TUMS integrates TRANSIMS and MITSIM as traffic simulation engines, which are open-source and widely-accepted for scalable traffic simulations. Consistent data and simulation platform allows quick adaption to various geographic areas that has been demonstrated for multiple cities across the world. We are combining the strengths of geospatial data sciences, high performance simulations, transportation planning, and emissions, vehicle and energy technology development to design and develop a simulation

  20. A guide to calculating habitat-quality metrics to inform conservation of highly mobile species

    Bieri, Joanna A.; Sample, Christine; Thogmartin, Wayne E.; Diffendorfer, James E.; Earl, Julia E.; Erickson, Richard A.; Federico, Paula; Flockhart, D. T. Tyler; Nicol, Sam; Semmens, Darius J.; Skraber, T.; Wiederholt, Ruscena; Mattsson, Brady J.

    2018-01-01

    Many metrics exist for quantifying the relative value of habitats and pathways used by highly mobile species. Properly selecting and applying such metrics requires substantial background in mathematics and understanding the relevant management arena. To address this multidimensional challenge, we demonstrate and compare three measurements of habitat quality: graph-, occupancy-, and demographic-based metrics. Each metric provides insights into system dynamics, at the expense of increasing amounts and complexity of data and models. Our descriptions and comparisons of diverse habitat-quality metrics provide means for practitioners to overcome the modeling challenges associated with management or conservation of such highly mobile species. Whereas previous guidance for applying habitat-quality metrics has been scattered in diversified tracks of literature, we have brought this information together into an approachable format including accessible descriptions and a modeling case study for a typical example that conservation professionals can adapt for their own decision contexts and focal populations.Considerations for Resource ManagersManagement objectives, proposed actions, data availability and quality, and model assumptions are all relevant considerations when applying and interpreting habitat-quality metrics.Graph-based metrics answer questions related to habitat centrality and connectivity, are suitable for populations with any movement pattern, quantify basic spatial and temporal patterns of occupancy and movement, and require the least data.Occupancy-based metrics answer questions about likelihood of persistence or colonization, are suitable for populations that undergo localized extinctions, quantify spatial and temporal patterns of occupancy and movement, and require a moderate amount of data.Demographic-based metrics answer questions about relative or absolute population size, are suitable for populations with any movement pattern, quantify demographic

  1. Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

    Fujii, M.; Ishikawa, Y.; Ishihara, R.; Van der Cingel, J.; Mofrad, M.R.T.; Horita, M.; Uraoka, Y.

    2013-01-01

    In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C

  2. Water mobility in the endosperm of high beta-glucan barley mutants as studied by nuclear magnetic resonance imaging

    Seefeldt, Helene Fast; van den Berg, Frans W.J.; Köckenberger, Walter

    2007-01-01

    1H NMR imaging (MRI) was used as a noninvasive technique to study water distribution and mobility in hydrated barley (Hordeum vulgare L.) seeds of accessions with varying content of beta glucan (BG), a highly hygroscopic cell wall component. High contents of BG in barley are unfavorable in malting...... where it leads to clotting of filters and hazing of beer as well as in animal feed where it hinders the rapid uptake of energy. However, a high content of BG has a positive nutritional effect, as it lowers the cholesterol and the glycaemic index. It was studied whether water distribution and mobility...... were related to content and location of BG. Water mobility was investigated by following the rate and mode of desiccation in hydrated single seeds. In order to determine the different water components, a multispin echo experiment was set up to reveal the T2 transverse relaxation rates of water within...

  3. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

    Chan, Silvia H; DenBaars, Steven P; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; Mishra, Umesh K

    2016-01-01

    This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N 2  + NH 3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm 2 V −1 s −1 (R sh  = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al 2 O 3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas. (paper)

  4. Highly anisotropic mobility in solution processed TIPS-pentacene film studied by independently driven four GaIn probes

    Yoshimoto, Shinya; Takahashi, Kohtaro; Suzuki, Mitsuharu; Yamada, Hiroko; Miyahara, Ryosuke; Mukai, Kozo; Yoshinobu, Jun

    2017-08-01

    We have studied in-plane anisotropy in the field-effect mobility of solution-processed organic semiconductor 6,13-bis(triisopropylsilylethynyl)pentacene by using independently driven four gallium indium (Ga-In) probes. Liquid-metal Ga-In probes are highly effective for reproducible conductivity measurements of organic thin films. We demonstrated that a high mobility anisotropy of 44 was obtained by using a square four-probe method and a feedback circuit to keep the channel potential constant. The present method minimized the influences of the contact resistance and the insensitivity of anisotropy in a linear arrangement in two-dimensional field-effect transistors.

  5. Two high-mobility group box domains act together to underwind and kink DNA

    Sánchez-Giraldo, R.; Acosta-Reyes, F. J. [Universitat Politecnica de Catalunya, 08028 Barcelona (Spain); Malarkey, C. S. [University of Colorado School of Medicine, Aurora, CO 80045 (United States); Saperas, N. [Universitat Politecnica de Catalunya, 08028 Barcelona (Spain); Churchill, M. E. A., E-mail: mair.churchill@ucdenver.edu [University of Colorado School of Medicine, Aurora, CO 80045 (United States); Campos, J. L., E-mail: mair.churchill@ucdenver.edu [Universitat Politecnica de Catalunya, 08028 Barcelona (Spain)

    2015-06-30

    The crystal structure of HMGB1 box A bound to an unmodified AT-rich DNA fragment is reported at a resolution of 2 Å. A new mode of DNA recognition for HMG box proteins is found in which two box A domains bind in an unusual configuration generating a highly kinked DNA structure. High-mobility group protein 1 (HMGB1) is an essential and ubiquitous DNA architectural factor that influences a myriad of cellular processes. HMGB1 contains two DNA-binding domains, box A and box B, which have little sequence specificity but have remarkable abilities to underwind and bend DNA. Although HMGB1 box A is thought to be responsible for the majority of HMGB1–DNA interactions with pre-bent or kinked DNA, little is known about how it recognizes unmodified DNA. Here, the crystal structure of HMGB1 box A bound to an AT-rich DNA fragment is reported at a resolution of 2 Å. Two box A domains of HMGB1 collaborate in an unusual configuration in which the Phe37 residues of both domains stack together and intercalate the same CG base pair, generating highly kinked DNA. This represents a novel mode of DNA recognition for HMGB proteins and reveals a mechanism by which structure-specific HMG boxes kink linear DNA.

  6. Isolated photosystem I reaction centers on a functionalized gated high electron mobility transistor.

    Eliza, Sazia A; Lee, Ida; Tulip, Fahmida S; Mostafa, Salwa; Greenbaum, Elias; Ericson, M Nance; Islam, Syed K

    2011-09-01

    In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale (~6 nm) reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs. © 2011 IEEE

  7. Two high-mobility group box domains act together to underwind and kink DNA

    Sánchez-Giraldo, R.; Acosta-Reyes, F. J.; Malarkey, C. S.; Saperas, N.; Churchill, M. E. A.; Campos, J. L.

    2015-01-01

    The crystal structure of HMGB1 box A bound to an unmodified AT-rich DNA fragment is reported at a resolution of 2 Å. A new mode of DNA recognition for HMG box proteins is found in which two box A domains bind in an unusual configuration generating a highly kinked DNA structure. High-mobility group protein 1 (HMGB1) is an essential and ubiquitous DNA architectural factor that influences a myriad of cellular processes. HMGB1 contains two DNA-binding domains, box A and box B, which have little sequence specificity but have remarkable abilities to underwind and bend DNA. Although HMGB1 box A is thought to be responsible for the majority of HMGB1–DNA interactions with pre-bent or kinked DNA, little is known about how it recognizes unmodified DNA. Here, the crystal structure of HMGB1 box A bound to an AT-rich DNA fragment is reported at a resolution of 2 Å. Two box A domains of HMGB1 collaborate in an unusual configuration in which the Phe37 residues of both domains stack together and intercalate the same CG base pair, generating highly kinked DNA. This represents a novel mode of DNA recognition for HMGB proteins and reveals a mechanism by which structure-specific HMG boxes kink linear DNA

  8. Isolated Photosystem I Reaction Centers on a Functionalized Gated High Electron Mobility Transistor

    Eliza, Sazia A. [University of Tennessee, Knoxville (UTK); Lee, Ida [ORNL; Tulip, Fahmida S [ORNL; Islam, Syed K [University of Tennessee, Knoxville (UTK); Mostafa, Salwa [University of Tennessee, Knoxville (UTK); Greenbaum, Elias [ORNL; Ericson, Milton Nance [ORNL

    2011-01-01

    In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale nm reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs.

  9. The Effects of Intradistrict School Mobility and High Student Turnover Rates on Early Reading Achievement

    LeBoeuf, Whitney A.

    2013-01-01

    A number of studies have identified school mobility as one form of school disengagement that is disproportionately harmful for young children enrolled in large urban districts. However, there is substantial variation in these findings, with some studies actually evidencing positive associations between school mobility and academic outcomes (Mehana…

  10. Behaviour of tetraalkylammonium ions in high-field asymmetric waveform ion mobility spectrometry.

    Aksenov, Alexander A; Kapron, James T

    2010-05-30

    High-field asymmetric waveform ion mobility spectrometry (FAIMS) is an ion-filtering technique recently adapted for use with liquid chromatography/mass spectrometry (LC/MS) to remove interferences during analysis of complex matrices. This is the first systematic study of a series of singly charged tetraalkylammonium ions by FAIMS-MS. The compensation voltage (CV) is the DC offset of the waveform which permits the ion to emerge from FAIMS and it was determined for each member of the series under various conditions. The electrospray ionization conditions explored included spray voltage, vaporizer temperature, and sheath and auxiliary gas pressure. The FAIMS conditions explored included carrier gas flow rate, electrode temperature and composition of the carrier gas. Optimum desolvation was achieved using sufficient carrier gas (flow rate > or = 2 L/min) to ensure stable response. Low-mass ions (m/z 100-200) are more susceptible to changes in electrode temperature and gas composition than high mass ions (m/z 200-700). As a result of this study, ions are reliably analyzed using standard FAIMS conditions (dispersion voltage -5000 V, carrier gas flow rate 3 L/min, 50% helium/50%nitrogen, inner electrode temperature 70 degrees C and outer electrode temperature 90 degrees C). Variation of FAIMS conditions may be of great use for the separation of very low mass tetraalkylammonium (TAA) ions from other TAA ions. The FAIMS conditions do not appear to have a major effect on higher mass ions. Copyright 2010 John Wiley & Sons, Ltd.

  11. Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

    Xu, Guizhou; Hou, Zhipeng; Wang, Yue; Zhang, Xiaoming; Zhang, Hongwei; Liu, Enke; Xi, X; Xu, Feng; Wu, Guangheng; Zhang, Xixiang; Wang, Wenhong

    2017-01-01

    The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

  12. Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

    Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace; Rajan, Siddharth; Volakis, John L.

    2016-01-01

    A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures

  13. Increased serum levels of high mobility group box 1 protein in patients with autistic disorder.

    Emanuele, Enzo; Boso, Marianna; Brondino, Natascia; Pietra, Stefania; Barale, Francesco; Ucelli di Nemi, Stefania; Politi, Pierluigi

    2010-05-30

    High mobility group box 1 (HMGB1) is a highly conserved, ubiquitous protein that functions as an activator for inducing the immune response and can be released from neurons after glutamate excitotoxicity. The objective of the present study was to measure serum levels of HMGB1 in patients with autistic disorder and to study their relationship with clinical characteristics. We enrolled 22 adult patients with autistic disorder (mean age: 28.1+/-7.7 years) and 28 age- and gender-matched healthy controls (mean age: 28.7+/-8.1 years). Serum levels of HMGB1 were measured by enzyme-linked immunosorbent assay (ELISA). Compared with healthy subjects, serum levels of HMGB1 were significantly higher in patients with autistic disorder (10.8+/-2.6 ng/mL versus 5.6+/-2.5 ng/mL, respectively, Pautistic disorder. Increased HMGB1 may be a biological correlate of the impaired reciprocal social interactions in this neurodevelopmental disorder. Copyright 2010 Elsevier Inc. All rights reserved.

  14. Expression and Effects of High-Mobility Group Box 1 in Cervical Cancer

    Xiaoao Pang

    2014-05-01

    Full Text Available We investigated the significance of high- mobility group box1 (HMGB1 and T-cell-mediated immunity and prognostic value in cervical cancer. HMGB1, forkhead/winged helix transcription factor p3 (Foxp3, IL-2, and IL-10 protein expression was analyzed in 100 cervical tissue samples including cervical cancer, cervical intraepithelial neoplasia (CIN, and healthy control samples using immunohistochemistry. Serum squamous cell carcinoma antigen (SCC-Ag was immunoradiometrically measured in 32 serum samples from 37 cases of squamous cervical cancer. HMGB1 and SCC-Ag were then correlated to clinicopathological characteristics. HMGB1 expression tends to increase as cervical cancer progresses and it was found to be significantly correlated to FIGO stage and lymph node metastasis. These findings suggest that HMGB1 may be a useful prognostic indicator of cervical carcinoma. In addition, there were significant positive relationships between HMGB1 and FOXP3 or IL-10 expression (both p < 0.05. In contrast, HMGB1 and IL-2 expression was negatively correlated (p < 0.05. HMGB1 expression may activate Tregs or facilitate Th2 polarization to promote immune evasion of cervical cancer. Elevated HMGB1 protein in cervical carcinoma samples was associated with a high recurrence of HPV infection in univariate analysis (p < 0.05. HMGB1 expression and levels of SCC-Ag were directly correlated in SCC (p < 0.05. Thus, HMGB1 may be a useful biomarker for patient prognosis and cervical cancer prediction and treatment.

  15. High strength-of-ties and low mobility enable the evolution of third-party punishment

    Roos, Patrick; Gelfand, Michele; Nau, Dana; Carr, Ryan

    2014-01-01

    As punishment can be essential to cooperation and norm maintenance but costly to the punisher, many evolutionary game-theoretic studies have explored how direct punishment can evolve in populations. Compared to direct punishment, in which an agent acts to punish another for an interaction in which both parties were involved, the evolution of third-party punishment (3PP) is even more puzzling, because the punishing agent itself was not involved in the original interaction. Despite significant empirical studies of 3PP, little is known about the conditions under which it can evolve. We find that punishment reputation is not, by itself, sufficient for the evolution of 3PP. Drawing on research streams in sociology and psychology, we implement a structured population model and show that high strength-of-ties and low mobility are critical for the evolution of responsible 3PP. Only in such settings of high social-structural constraint are punishers able to induce self-interested agents toward cooperation, making responsible 3PP ultimately beneficial to individuals as well as the collective. Our results illuminate the conditions under which 3PP is evolutionarily adaptive in populations. Responsible 3PP can evolve and induce cooperation in cases where other mechanisms alone fail to do so. PMID:24335985

  16. Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

    Freeman, Jon C.

    2003-01-01

    Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

  17. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor

    Jiang, Chunyan; Liu, Ting; Du, Chunhua; Huang, Xin; Liu, Mengmeng; Zhao, Zhenfu; Li, Linxuan; Pu, Xiong; Zhai, Junyi; Hu, Weiguo; Wang, Zhong Lin

    2017-11-01

    The piezotronic effect utilizes strain-induced piezoelectric polarization charges to tune the carrier transportation across the interface/junction. We fabricated a high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the transport property was proven to be enhanced by applying an external stress for the first time. The enhanced source-drain current was also observed at any gate voltage and the maximum enhancement of the saturation current was up to 21% with 15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical mechanism of HEMT with/without external compressive stress conditions was carefully illustrated and further confirmed by a self-consistent solution of the Schrödinger-Poisson equations. This study proves the cause-and-effect relationship between the piezoelectric polarization effect and 2D electron gas formation, which provides a tunable solution to enhance the device performance. The strain tuned HEMT has potential applications in human-machine interface and the security control of the power system.

  18. Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

    Xu, Guizhou

    2017-03-14

    The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

  19. The Impact of Low, Moderate, and High Military Family Mobility School District Transfer Rates on Graduating Senior High School Dependents' Achievement and School Engagement

    Rippe, Jeffrey K.

    2012-01-01

    The results of this study suggest that there were no significant differences in the academic performance of military dependents' with low (n = 20), moderate (n = 20), and high (n = 20) mobility school district transfer rates compared to non-military control students (n = 20) before completing high school. The findings were not consistent with…

  20. From mobile ADCP to high-resolution SSC: a cross-section calibration tool

    Boldt, Justin A.

    2015-01-01

    Sediment is a major cause of stream impairment, and improved sediment monitoring is a crucial need. Point samples of suspended-sediment concentration (SSC) are often not enough to provide an understanding to answer critical questions in a changing environment. As technology has improved, there now exists the opportunity to obtain discrete measurements of SSC and flux while providing a spatial scale unmatched by any other device. Acoustic instruments are ubiquitous in the U.S. Geological Survey (USGS) for making streamflow measurements but when calibrated with physical sediment samples, they may be used for sediment measurements as well. The acoustic backscatter measured by an acoustic Doppler current profiler (ADCP) has long been known to correlate well with suspended sediment, but until recently, it has mainly been qualitative in nature. This new method using acoustic surrogates has great potential to leverage the routine data collection to provide calibrated, quantitative measures of SSC which hold promise to be more accurate, complete, and cost efficient than other methods. This extended abstract presents a method for the measurement of high spatial and temporal resolution SSC using a down-looking, mobile ADCP from discrete cross-sections. The high-resolution scales of sediment data are a primary advantage and a vast improvement over other discrete methods for measuring SSC. Although acoustic surrogate technology using continuous, fixed-deployment ADCPs (side-looking) is proven, the same methods cannot be used with down-looking ADCPs due to the fact that the SSC and particle-size distribution variation in the vertical profile violates theory and complicates assumptions. A software tool was developed to assist in using acoustic backscatter from a down-looking, mobile ADCP as a surrogate for SSC. This tool has a simple graphical user interface that loads the data, assists in the calibration procedure, and provides data visualization and output options. This tool

  1. On the processing of InAs and InSb photodiode applications

    Odendaal, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of Pretoria, Lynnwood road, Hillcrest, Pretoria 0002 (South Africa)

    2008-07-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na{sub 2}S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Etching and oxidation of InAs in planar inductively coupled plasma

    Dultsev, F.N., E-mail: fdultsev@thermo.isp.nsc.ru [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, Novosibirsk 630090 (Russian Federation)

    2009-10-15

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH{sub 4}/H{sub 2}/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  3. Etching and oxidation of InAs in planar inductively coupled plasma

    Dultsev, F. N.; Kesler, V. G.

    2009-10-01

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  4. Etching and oxidation of InAs in planar inductively coupled plasma

    Dultsev, F.N.; Kesler, V.G.

    2009-01-01

    The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4 /H 2 /Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

  5. Functional display of ice nucleation protein InaZ on the surface of bacterial ghosts.

    Kassmannhuber, Johannes; Rauscher, Mascha; Schöner, Lea; Witte, Angela; Lubitz, Werner

    2017-09-03

    In a concept study the ability to induce heterogeneous ice formation by Bacterial Ghosts (BGs) from Escherichia coli carrying ice nucleation protein InaZ from Pseudomonas syringae in their outer membrane was investigated by a droplet-freezing assay of ultra-pure water. As determined by the median freezing temperature and cumulative ice nucleation spectra it could be demonstrated that both the living recombinant E. coli and their corresponding BGs functionally display InaZ on their surface. Under the production conditions chosen both samples belong to type II ice-nucleation particles inducing ice formation at a temperature range of between -5.6 °C and -6.7 °C, respectively. One advantage for the application of such BGs over their living recombinant mother bacteria is that they are non-living native cell envelopes retaining the biophysical properties of ice nucleation and do no longer represent genetically modified organisms (GMOs).

  6. On the processing of InAs and InSb photodiode applications

    Odendaal, V.; Botha, J.R.; Auret, F.D.

    2008-01-01

    In this paper, potential methods for the surface passivation of InSb and InAs material, covering both compositional extremes of the promising narrow band gap semiconductor InAsSb, are evaluated. Surface states, mostly due to dangling bonds and exposure to the atmosphere, create generation-recombination centres that negatively influence the dark current, stability, efficiency and related noise characteristics of photosensitive devices fabricated from these materials. The effect of various surface treatments, including sulphuric acid based etching, lactic acid based etching, KOH anodising and Na 2 S anodising, on the relative number of surface states is deduced by evaluating the capacitance versus voltage characteristics of metal-insulator-semiconductor structures fabricated on InAs and InSb. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Direct evidence of strain transfer for InAs island growth on compliant Si substrates

    Marçal, L. A. B.; Magalhães-Paniago, R.; Malachias, Angelo, E-mail: angeloms@fisica.ufmg.br [Universidade Federal de Minas Gerais, Av. Antonio Carlos 6627, CEP 31270-901, Belo Horizonte (Brazil); Richard, M.-I. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Aix-Marseille University, IM2NP-CNRS, Faculté des Sciences de St Jérôme, 13397 Marseille (France); Cavallo, F. [Center for High Technology Materials, University of New Mexico, 1313 Goddard St., Albuquerque, New Mexico 87106 (United States); University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Lagally, M. G. [University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706 (United States); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW-Dresden, D-01171 Dresden (Germany); Schülli, T. Ü. [European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9 (France); Deneke, Ch. [Laboratório Nacional de Nanotecnologia (LNNano/CNPEM), C.P. 6192, CEP 13083-970, Campinas (Brazil)

    2015-04-13

    Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 × 700 nm{sup 2} can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film.

  8. Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

    Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

    2018-05-01

    A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

  9. Intermediate band solar cell simulation use InAs quantum dot in GaAs

    Hendra P, I. B.; Rahayu, F.; Sahdan, M. F.; Darma, Y.

    2015-01-01

    Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. One way to create intermediate band is by proposing quantum dots (QD) technology. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We also simulated the influence of QD size to capture a wider light spectrum. We present a simple calculation method with low computing power demand. Results show that the increasing in quantum dot size can increase in capturing wider spectrum of light. Arrangement InAs QD in bulk material GaAs can capture wider spectrum of light and increase the absorption coefficient. The arrangement InAs QD 2 nm in GaAs bulk can increase solar cell efficiency up to 49.68%

  10. Shubnikov-de Haas effect study of InAs after transmutation doping at low temperatures

    Gerstenberg, H.; Mueller, P.

    1990-01-01

    Degenerate InAs single crystals have been irradiated by thermal neutrons below 6 K. The Shubnikov-de Haas effect and the electrical resistivity have been measured as a function of the neutron dose and the annealing temperature. The effects of transmutation doping and simultaneous introduction of lattice defects have been analysed in terms of the conduction electron density and the scattering rates τ ρ -1 - ρne 2 /m * and τ x -1 2πkub(B)X/h/2π (where X is the Dingle temperature). The measured conduction electron density after irradiation and thermal annealing agreed well with the values calculated from the experimental and materials parameters. The effects of radiation damage may qualitatively be explained assuming neutral In vacancies to be the most common type of defect in thermal-neutron-irradiated InAs. A comparison with similar experiments on InSb is given. (author)

  11. Mobile Learning Based Worked Example in Electric Circuit (WEIEC) Application to Improve the High School Students' Electric Circuits Interpretation Ability

    Yadiannur, Mitra; Supahar

    2017-01-01

    This research aims to determine the feasibility and effectivity of mobile learning based Worked Example in Electric Circuits (WEIEC) application in improving the high school students' electric circuits interpretation ability on Direct Current Circuits materials. The research method used was a combination of Four-D Models and ADDIE model. The…

  12. High mobility group box1 (HMGB1) in relation to cutaneous inflammation in systemic lupus erythematosus (SLE)

    Abdulahad, D.A.; Westra, J.; Reefman, E.; Zuidersma, E.; Bijzet, J.; Limburg, P.C.; Kallenberg, C.G.M.; Bijl, M.

    2013-01-01

    Photosensitivity is characteristic of systemic lupus erythematosus (SLE). Upon ultraviolet B (UVB) exposure, patients develop inflammatory skin lesions in the vicinity of sunburn cells (SBCs). High mobility group box 1 (HMGB1) is released from apoptotic and activated cells and exerts inflammatory

  13. Enhanced mobility of poly(3-hexylthiophene) transistors by spin-coating from high-boiling-point solvents

    Chang, J.F.; Sun, B.Q.; Breiby, Dag Werner

    2004-01-01

    chloroform are typically on the order of 0.01 cm(2)/(V s). Here we investigate a range of solvents with higher boiling points. We find that 1,2,4-trichlorobenzene with good solubility and a high boiling point significantly improves the field-effect mobilities up to 0.12 cm(2)/(V s) with on:off ratios of 10...

  14. Sequence-specific high mobility group box factors recognize 10-12-base pair minor groove motifs

    van Beest, M; Dooijes, D; van De Wetering, M

    2000-01-01

    Sequence-specific high mobility group (HMG) box factors bind and bend DNA via interactions in the minor groove. Three-dimensional NMR analyses have provided the structural basis for this interaction. The cognate HMG domain DNA motif is generally believed to span 6-8 bases. However, alignment...

  15. Characterising thermal resistances and capacitances of GaN high-electron-mobility transistors through dynamic electrothermal measurements

    Wei, Wei; Mikkelsen, Jan H.; Jensen, Ole Kiel

    2014-01-01

    This study presents a method to characterise thermal resistances and capacitances of GaN high-electron-mobility transistors (HEMTs) through dynamic electrothermal measurements. A measured relation between RF gain and the channel temperature (Tc) is formed and used for indirect measurements...

  16. High ice nucleation activity located in blueberry stem bark is linked to primary freeze initiation and adaptive freezing behaviour of the bark

    Kishimoto, Tadashi; Yamazaki, Hideyuki; Saruwatari, Atsushi; Murakawa, Hiroki; Sekozawa, Yoshihiko; Kuchitsu, Kazuyuki; Price, William S.; Ishikawa, Masaya

    2014-01-01

    Controlled ice nucleation is an important mechanism in cold-hardy plant tissues for avoiding excessive supercooling of the protoplasm, for inducing extracellular freezing and/or for accommodating ice crystals in specific tissues. To understand its nature, it is necessary to characterize the ice nucleation activity (INA), defined as the ability of a tissue to induce heterogeneous ice nucleation. Few studies have addressed the precise localization of INA in wintering plant tissues in respect of its function. For this purpose, we recently revised a test tube INA assay and examined INA in various tissues of over 600 species. Extremely high levels of INA (−1 to −4 °C) in two wintering blueberry cultivars of contrasting freezing tolerance were found. Their INA was much greater than in other cold-hardy species and was found to be evenly distributed along the stems of the current year's growth. Concentrations of active ice nuclei in the stem were estimated from quantitative analyses. Stem INA was localized mainly in the bark while the xylem and pith had much lower INA. Bark INA was located mostly in the cell wall fraction (cell walls and intercellular structural components). Intracellular fractions had much less INA. Some cultivar differences were identified. The results corresponded closely with the intrinsic freezing behaviour (extracellular freezing) of the bark, icicle accumulation in the bark and initial ice nucleation in the stem under dry surface conditions. Stem INA was resistant to various antimicrobial treatments. These properties and specific localization imply that high INA in blueberry stems is of intrinsic origin and contributes to the spontaneous initiation of freezing in extracellular spaces of the bark by acting as a subfreezing temperature sensor. PMID:25082142

  17. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

    Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

    2017-07-01

    High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

  18. Thermal instability and the growth of the InGaAs/AlGaAs pseudomorphic high electron mobility transistor system

    Pellegrino, Joseph G.; Qadri, Syed B.; Mahadik, Nadeemullah A.; Rao, Mulpuri V.; Tseng, Wen F.; Thurber, Robert; Gajewski, Donald; Guyer, Jonathan

    2007-01-01

    The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%-3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77 K

  19. Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors

    Kadashchuk, Andrey; Tong, Fei; Janneck, Robby; Fishchuk, Ivan I.; Mityashin, Alexander; Pavlica, Egon; Köhler, Anna; Heremans, Paul; Rolin, Cedric; Bratina, Gvido; Genoe, Jan

    2017-09-01

    We demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors.

  20. Two-frequency method for measuring Hall emf in high-resistive materials with charge-carrier low mobility

    Aleksandrov, A.L.; Vedeneev, A.S.; Gulyaev, I.B.; Zhdan, A.G.

    1982-01-01

    A facility for measuring Hall emf in high-resistive materials with low mobility of charge carriers by the two-frequency method using digital synchronous integration is described. The facility permits to detect the minimum Hall emf approxamatety equat to 5 μV at approximatety equal to 1 T Ohm of the investigated.sample resistance during the measuring time of approximately equal to 2000 s. Sensitivity by Hall mobility makes up >= 0.01 cm 2 /Vxs at the same measuring time. Measuring results of the Hall emf on GaAs monocrystals, CdSe films and island film of gold are presented

  1. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.

    2014-01-01

    We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  2. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    P. C. Chang

    2014-01-01

    Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  3. Nonlinear absorption and transmission properties of Ge, Te and InAs using tuneable IR FEL

    Amirmadhi, F.; Becker, K.; Brau, C.A. [Vanderbilt Univ., Nashville, TN (United States)

    1995-12-31

    Nonlinear absorption properties of Ge, Te and InAs are being investigated using the transmission of FEL optical pulses through these semiconductors (z-scan method). Wavelength, intensity and macropulse dependence are used to differentiate between two-photon and free-carrier absorption properties of these materials. Macropulse dependence is resolved by using a Pockles Cell to chop the 4-{mu}s macropulse down to 100 ns. Results of these experiments will be presented and discussed.

  4. Arsenic flux dependence of island nucleation on InAs(001)

    Grosse, Frank; Barvosa-Carter, William; Zinck, Jenna; Wheeler, Matthew; Gyure, Mark F.

    2002-01-01

    The initial stages of InAs(001) homoepitaxial growth are investigated using a combination of kinetic Monte Carlo simulations based on ab initio density functional theory and scanning tunneling microscopy. In the two dimensional island nucleation mode investigated, the island number density is found to decrease with increasing As. This behavior is explained by a suppression of the effective In-adatom density leading to a reduction in island nucleation. The relevant microscopic processes responsible for this reduction are identified

  5. Reconstruction of an InAs nanowire using geometric and algebraic tomography

    Pennington, R S; Boothroyd, C B; König, S; Alpers, A; Dunin-Borkowski, R E

    2011-01-01

    Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality. When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize.

  6. Reconstruction of an InAs nanowire using geometric and algebraic tomography

    Pennington, Robert S.; König, S.; Alpers, A.

    2011-01-01

    Geometric tomography and conventional algebraic tomography algorithms are used to reconstruct cross-sections of an InAs nanowire from a tilt series of experimental annular dark-field images. Both algorithms are also applied to a test object to assess what factors affect the reconstruction quality....... When using the present algorithms, geometric tomography is faster, but artifacts in the reconstruction may be difficult to recognize....

  7. Steering of quantum waves: Demonstration of Y-junction transistors using InAs quantum wires

    Jones, Gregory M.; Qin, Jie; Yang, Chia-Hung; Yang, Ming-Jey

    2005-06-01

    In this paper we demonstrate using an InAs quantum wire Y-branch switch that the electron wave can be switched to exit from the two drains by a lateral gate bias. The gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Our result suggests a new transistor function in a multiple-lead ballistic quantum wire system.

  8. Development of practical field minimised personal hands free headset for mobile phones with high performance robustness

    Gosnell, M.E.; Huber, G.

    2001-01-01

    This paper presents the development of a practical means of minimising exposure of the user's head to radiated emissions from mobile phones. The invention allows the production of a commercially viable product similar to the existing and widely accepted hands free headsets. The description of the design evolution concentrates on various techniques for attenuating the power emissions at the earpiece and the corresponding results will be disclosed including measurements taken with the mobile held in several typical positions. The design focuses on maximising immunity to phone and wire position with maximum attenuation in the commercial mobile bands. Copyright (2001) Australasian Radiation Protection Society Inc

  9. Basic design and construction of a mobile hot cell for the conditioning of spent high activity radioactive sources

    An Hongxiang; Fan Zhiwen; Al-Mughrabi, M.

    2011-01-01

    The conditioning of spent high activity radioactive sources is one important step in sealed radioactive sources management strategies. Based on the practice on the designing of the immobilized hot cell, the handling of the sealed radioactive sources, and the reference of the mobile hot cell constructed in South Africa, SHARS conditioning process and the basic design of a mobile hot cell is developed. The mobile hot cell has been constructed and the tests including the cold test of the SRS conditioning, the hot cell assemble and disassemble and SRS recovery were done. The shielding capacity were tested by 3.8 x 10 13 Bq cobalt-60 sources and the dose rate of the equipment surface, below 2 m, is less than 0.016 mSv/h. It is proved that the designing requirement is meet and the function of the equipment is good. (authors)

  10. High mobility organic field-effect transistor based on water-soluble deoxyribonucleic acid via spray coating

    Shi, Wei; Han, Shijiao; Huang, Wei; Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2015-01-26

    High mobility organic field-effect transistors (OFETs) by inserting water-soluble deoxyribonucleic acid (DNA) buffer layer between electrodes and pentacene film through spray coating process were fabricated. Compared with the OFETs incorporated with DNA in the conventional organic solvents of ethanol and methanol: water mixture, the water-soluble DNA based OFET exhibited an over four folds enhancement of field-effect mobility from 0.035 to 0.153 cm{sup 2}/Vs. By characterizing the surface morphology and the crystalline structure of pentacene active layer through atomic force microscope and X-ray diffraction, it was found that the adoption of water solvent in DNA solution, which played a key role in enhancing the field-effect mobility, was ascribed to both the elimination of the irreversible organic solvent-induced bulk-like phase transition of pentacene film and the diminution of a majority of charge trapping at interfaces in OFETs.

  11. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

    Dionízio Moreira, M; Venezuela, P; Miwa, R H

    2010-07-16

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  12. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

    Dionizio Moreira, M; Venezuela, P; Miwa, R H

    2010-01-01

    We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As↔P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

  13. Alloy formation during InAs nanowire growth on GaAs(111)

    Davydok, Anton; Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen (Germany); Rieger, Torsten; Grap, Thomas; Lepsa, Mihail [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

    2012-07-01

    The growth of semiconductor nanowires has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. A possible way to obtain nanowires is the growth in molecular beam epitaxy on the (111)B oriented surface of the desired substrate, covered by a thin oxide layer. A crucial parameter in this method is the initial thickness of the oxide layer, often determined by an etching procedure. In this contribution, we report on the structural investigation of InAs nanowires grown on GaAs substrates covered by different oxide-layers using X-ray diffraction. In this contribution, we report on the structural investigation of InAs nanowires grown via an In droplet on GaAs substrates covered by different oxide layers using X-ray diffraction. Using a combination of symmetric and asymmetric X-ray diffraction, we observe that for growth on a defective oxide layer, alloy formation takes place and a large amount of InGaAs is formed, whereas for growth on an initially smooth oxide layer, only pure InAs is formed.

  14. The Crystal structure of InAs nanorods grown onto Si[111] substrate

    Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3,57072, Siegen (Germany); Breuer, Steffen; Dimakis, Manos; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2011-07-01

    Nanowires are of particular interest due to the ability to synthesize heterostructures in the nanometer range. It was found that nearly any AIIIBV semiconductor material can be grown as NWs onto another AIIIBV or group IV [111] substrate independent from lattice mismatch. We presented an X-ray characterization of InAs NRs on Si [111] grown by assist free MBE method. Lattice mismatch of this materials is 11%. For study of strain realizing we concentrated our research on initial stages of growth process investigating samples set with different growth time. Using synchrotron radiation we have performed experiments in symmetrical and asymmetrical out-of plane scattering geometry and grazing-incidence diffraction. Combining the results we were able to characterize the transition between silicon silicon substrate and InAs NWs. We find in-plane lattice mismatch of -0.18% close to the interface compared to InAs bulk material. With help of micro-focus setup we are able measure structural parameters of single NWs to determine the strain accomodation as function of NW size. In particular using asymmetric wurzite-sensitive reflections under coherent beam illumination we could quantify the number of stacking faults. In the talk we present details of the analysis and first simulation results.

  15. Geometric factors in the magnetoresistance of n-doped InAs epilayers

    Sun, Jian

    2013-11-27

    We investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler\\'s rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler\\'s rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.

  16. Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

    Lim, Jong-Won, E-mail: jwlim@etri.re.kr [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Park, Hyung-Moo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Division of Electronics and Electrical Engineering, Dongguk University, Seoul (Korea, Republic of)

    2013-11-29

    We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f{sub T}) of 18 GHz, and a maximum oscillation frequency (f{sub max}) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz.

  17. Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

    Lim, Jong-Won; Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo; Park, Hyung-Moo

    2013-01-01

    We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f T ) of 18 GHz, and a maximum oscillation frequency (f max ) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz

  18. Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high-electron-mobility transistor

    Quan Si; Hao Yue; Ma Xiao-Hua; Yu Hui-You

    2011-01-01

    AlGaN/GaN depletion-mode high-electron-mobility transistor (D-HEMT) and fluorine (F) plasma treated enhancement-mode high-electron-mobility transistor (E-HEMT) are exposed to 60 Co gamma radiation with a dose of 1.6 Mrad (Si). No degradation is observed in the performance of D-HEMT. However, the maximum transconductance of E-HEMT is increased after radiation. The 2DEG density and the mobility are calculated from the results of capacitance-voltage measurement. The electron mobility decreases after fluorine plasma treatment and recovers after radiation. Conductance measurements in a frequency range from 10 kHz to 1 MHz are used to characterize the trapping effects in the devices. A new type of trap is observed in the F plasma treated E-HEMT compared with the D-HEMT, but the density of the trap decreases by radiation. Fitting of G p /ω data yields the trap densities D T = (1 − 3) × 10 12 cm −2 · eV −1 and D T = (0.2 − 0.8) × 10 12 cm −2 · eV −1 before and after radiation, respectively. The time constant is 0.5 ms-6 ms. With F plasma treatment, the trap is introduced by etch damage and degrades the electronic mobility. After 60 Co gamma radiation, the etch damage decreases and the electron mobility is improved. The gamma radiation can recover the etch damage caused by F plasma treatment. (interdisciplinary physics and related areas of science and technology)

  19. Magnetotransport of High Mobility Holes in Monolayer and Bilayer WSe2

    Tutuc, Emanuel

    Transition metal dichalcogenides have attracted significant interest because of their two-dimensional crystal structure, large band-gap, and strong spin-orbit interaction which leads to spin-valley locking. Recent advances in sample fabrication have allowed the experimental study of low temperature magneto-transport of high mobility holes in WSe2. We review here the main results of these studies which reveal clear quantum Hall states in mono- and bilayer WSe2. The data allows the extraction of an effective hole mass of m* = 0.45me (me is the bare electron mass) in both mono and bilayer WSe2. A systematic study of the carrier distribution in bilayer WSe2 determined from a Fourier analysis of the Shubnikov-de Haas oscillations indicates that the two layers are weakly coupled. The individual layer density dependence on gate bias shows negative compressibility, a signature of strong electron-electron interaction in these materials associated with the large effective mass. We discuss the interplay between cyclotron and Zeeman splitting using the dependence of the quantum Hall state sequence on carrier density, and the angle between the magnetic field and the WSe2 plane. Work done in collaboration with B. Fallahazad, H. C. P. Movva, K. Kim, S. K. Banerjee, T. Taniguchi, and K. Watanabe. This work supported by the Nanoelectronics Research Initiative SWAN center, Intel Corp., and National Science Foundation.

  20. Anti-high mobility group box-1 antibody therapy for traumatic brain injury.

    Okuma, Yu; Liu, Keyue; Wake, Hidenori; Zhang, Jiyong; Maruo, Tomoko; Date, Isao; Yoshino, Tadashi; Ohtsuka, Aiji; Otani, Naoki; Tomura, Satoshi; Shima, Katsuji; Yamamoto, Yasuhiko; Yamamoto, Hiroshi; Takahashi, Hideo K; Mori, Shuji; Nishibori, Masahiro

    2012-09-01

    High mobility group box-1 (HMGB1) plays an important role in triggering inflammatory responses in many types of diseases. In this study, we examined the involvement of HMGB1 in traumatic brain injury (TBI) and evaluated the ability of intravenously administered neutralizing anti-HMGB1 monoclonal antibody (mAb) to attenuate brain injury. Traumatic brain injury was induced in rats or mice by fluid percussion. Anti-HMGB1 mAb or control mAb was administered intravenously after TBI. Anti-HMGB1 mAb remarkably inhibited fluid percussion-induced brain edema in rats, as detected by T2-weighted magnetic resonance imaging; this was associated with inhibition of HMGB1 translocation, protection of blood-brain barrier (BBB) integrity, suppression of inflammatory molecule expression, and improvement of motor function. In contrast, intravenous injection of recombinant HMGB1 dose-dependently produced the opposite effects. Experiments using receptor for advanced glycation end product (RAGE)(-/-) , toll-like receptor-4 (TLR4)(-/-) , and TLR2(-/-) mice suggested the involvement of RAGE as the predominant receptor for HMGB1. Anti-HMGB1 mAb may provide a novel and effective therapy for TBI by protecting against BBB disruption and reducing the inflammatory responses induced by HMGB1. Copyright © 2012 American Neurological Association.

  1. Isomer Information from Ion Mobility Separation of High-Mannose Glycan Fragments.

    Harvey, David J; Seabright, Gemma E; Vasiljevic, Snezana; Crispin, Max; Struwe, Weston B

    2018-05-01

    Extracted arrival time distributions of negative ion CID-derived fragments produced prior to traveling-wave ion mobility separation were evaluated for their ability to provide structural information on N-linked glycans. Fragmentation of high-mannose glycans released from several glycoproteins, including those from viral sources, provided over 50 fragments, many of which gave unique collisional cross-sections and provided additional information used to assign structural isomers. For example, cross-ring fragments arising from cleavage of the reducing terminal GlcNAc residue on Man 8 GlcNAc 2 isomers have unique collision cross-sections enabling isomers to be differentiated in mixtures. Specific fragment collision cross-sections enabled identification of glycans, the antennae of which terminated in the antigenic α-galactose residue, and ions defining the composition of the 6-antenna of several of the glycans were also found to have different cross-sections from isomeric ions produced in the same spectra. Potential mechanisms for the formation of the various ions are discussed and the estimated collisional cross-sections are tabulated. Graphical Abstract ᅟ.

  2. Redox oscillation affecting mercury mobility from highly contaminated coastal sediments: a mesocosm incubation experiment

    Emili A.

    2013-04-01

    Full Text Available Mercury (Hg mobility at the sediment-water interface was investigated during a laboratory incubation experiment on highly contaminated sediments (up to 23 μg g−1 of the Gulf of Trieste. Undisturbed sediment was collected in front of the Isonzo River mouth, which inflows Hg-rich suspended material originating from the Idrija (NW Slovenia mining district. Since hypoxic and anoxic conditions at the bottom are frequently observed, a redox oscillation was simulated in the laboratory at in situ temperature, using a dark flux chamber. Temporal variations of several parameters were monitored simultaneously: dissolved Hg and methylmercury (MeHg, O2, NH4+, NO3−+NO2−, PO43−, H2S, dissolved Fe and Mn, dissolved inorganic and organic carbon (DIC and DOC. Benthic fluxes of Hg and MeHg were higher under anoxic conditions while re-oxygenation caused concentrations of MeHg and Hg to rapidly drop, probably due to re-adsorption onto Fe/Mn oxyhydroxides and enhanced demethylation. Hence, during anoxic events, sediments of the Gulf of Trieste may be considered as an important source of dissolved Hg species for the water column. However, re-oxygenation of the bottom compartment mitigates Hg and MeHg release from the sediment, thus acting as a natural “defence” from possible interaction between the metal and the aquatic organisms.

  3. A southern African origin and cryptic structure in the highly mobile plains zebra.

    Pedersen, Casper-Emil T; Albrechtsen, Anders; Etter, Paul D; Johnson, Eric A; Orlando, Ludovic; Chikhi, Lounes; Siegismund, Hans R; Heller, Rasmus

    2018-03-01

    The plains zebra (Equus quagga) is an ecologically important species of the African savannah. It is also one of the most numerous and widely distributed ungulates, and six subspecies have been described based on morphological variation. However, the within-species evolutionary processes have been difficult to resolve due to its high mobility and a lack of consensus regarding the population structure. We obtained genome-wide DNA polymorphism data from more than 167,000 loci for 59 plains zebras from across the species range, encompassing all recognized extant subspecies, as well as three mountain zebras (Equus zebra) and three Grevy's zebras (Equus grevyi). Surprisingly, the population genetic structure does not mirror the morphology-based subspecies delineation, underlining the dangers of basing management units exclusively on morphological variation. We use demographic modelling to provide insights into the past phylogeography of the species. The results identify a southern African location as the most likely source region from which all extant populations expanded around 370,000 years ago. We show evidence for inclusion of the extinct and phenotypically divergent quagga (Equus quagga quagga) in the plains zebra variation and reveal that it was less divergent from the other subspecies than the northernmost (Ugandan) extant population.

  4. A compact high resolution ion mobility spectrometer for fast trace gas analysis.

    Kirk, Ansgar T; Allers, Maria; Cochems, Philipp; Langejuergen, Jens; Zimmermann, Stefan

    2013-09-21

    Drift tube ion mobility spectrometers (IMS) are widely used for fast trace gas detection in air, but portable compact systems are typically very limited in their resolving power. Decreasing the initial ion packet width improves the resolution, but is generally associated with a reduced signal-to-noise-ratio (SNR) due to the lower number of ions injected into the drift region. In this paper, we present a refined theory of IMS operation which employs a combined approach for the analysis of the ion drift and the subsequent amplification to predict both the resolution and the SNR of the measured ion current peak. This theoretical analysis shows that the SNR is not a function of the initial ion packet width, meaning that compact drift tube IMS with both very high resolution and extremely low limits of detection can be designed. Based on these implications, an optimized combination of a compact drift tube with a length of just 10 cm and a transimpedance amplifier has been constructed with a resolution of 183 measured for the positive reactant ion peak (RIP(+)), which is sufficient to e.g. separate the RIP(+) from the protonated acetone monomer, even though their drift times only differ by a factor of 1.007. Furthermore, the limits of detection (LODs) for acetone are 180 pptv within 1 s of averaging time and 580 pptv within only 100 ms.

  5. Strontium isotope evidence for a highly mobile population on the Pamir Plateau 2500 years ago

    Wang, Xueye; Tang, Zihua; Wu, Jing; Wu, Xinhua; Wu, Yiqun; Zhou, Xinying

    2016-10-01

    Archeological researches have proposed arguments for human mobility and long-distance trading over the Eurasia before the Silk Roads. Here we utilize biologically available strontium isotope analysis to assess the extent of pre-Silk Road population movements and cultural communications across the Asian interior. From an early Iron Age cemetery (ca. 2500 yr B.P.) on the eastern Pamir Plateau, mean 87Sr/86Sr ratios from 34 individuals display considerable isotopic variability, and 10 individuals are distinguished as migrants based on the local strontium isotope range of 0.710296-0.710572 defined by 12 ovicaprine bones. Comparison of the proportion (10/34) with the regional census data completed in 1909 A.D. (3% non-locals) suggests a highly migratory behavior on the plateau 2500 years ago. Furthermore, exotic mortuary objects, such as silk fabrics from eastern China and angular harp originated from the Near East, clearly demonstrate an interaction between different cultures on the plateau before the establishment of the Silk Road.

  6. Mobile relays for enhanced broadband connectivity in high speed train systems

    Yaacoub, Elias E.

    2014-09-01

    With the introduction of wireless modems and smart phones, the passenger transport industry is witnessing a high demand to ensure not only the safety of the trains, but also to provide users with Internet access all the time inside the train. When the Mobile Terminal (MT) communicates directly with the Base Station (BS), it will experience a severe degradation in the Quality of Service due to the path loss and shadowing effects as the wireless signal is traveling through the train. In this paper, we study the performance in the case of relays placed on top of each train car. In the proposed approach, these relays communicate with the cellular BS on one hand, and with the MTs inside the train cars on the other hand, using the Long Term Evolution (LTE) cellular technology. A low complexity heuristic LTE radio resource management approach is proposed and compared to the Hungarian algorithm, both in the presence and absence of the relays. The presence of the relays is shown to lead to significant enhancements in the effective data rates of the MTs. In addition, the proposed resource management approach is shown to reach a performance close to the optimal Hungarian algorithm. © 2014 Elsevier B.V.

  7. Expression and mechanism of high mobility group box protein-1 in retinal tissue of diabetic rats

    Shuang Jiang

    2016-05-01

    Full Text Available AIM:To investigate the expression and mechanism of high mobility group box protein-1(HMGB1in the retina of diabetic rats. METHODS:Sixty SD rats were randomly divided into diabetic group and control group. Diabetic rat model was produced by intraperitioneal injection of 1% STZ with 60mg/Kg weight. The rats in control group received intraperitioneal injection of normal saline with same dosage. After injection, the rats were sacrificed and eyeballs were enucleated for HE staining, the retina fluorescence angiography, TUNEL and Western Blot detection at 1, 2 and 4mo for the expressions of HMGB1 and NF-κB. RESULTS:Compared with the control group, the retinal cells disorder, cell densities decreases, microvasculars occlusion were founded with inner and outer nuclear layer thinning and ganglion cell apoptosis. The fluorescence angiography showed that peripheral capillaries became circuitous and vascular occlusion and non-perfusion area could be seen. The expressions of HMGB1 and NF-κB were higher than those of control with time dependence and they had significant positive correlations(PCONCLUSION:The expression of HMGB1 increases in diabetic rat retina, which may involve in the occurrence of diabetic retinopathy through the NF- κB pathway.

  8. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Reza, Shahed; Chumbes, Eduardo M. [Raytheon Integrated Defense Systems, Andover, Massachusetts 01810 (United States); Khurgin, Jacob [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2015-10-12

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

  9. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    Bajaj, Sanyam; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang; Reza, Shahed; Chumbes, Eduardo M.; Khurgin, Jacob; Rajan, Siddharth

    2015-01-01

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10 7  cm/s at a low sheet charge density of 7.8 × 10 11  cm −2 . An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs

  10. High Mobility Group B Proteins, Their Partners, and Other Redox Sensors in Ovarian and Prostate Cancer

    Aida Barreiro-Alonso

    2016-01-01

    Full Text Available Cancer cells try to avoid the overproduction of reactive oxygen species by metabolic rearrangements. These cells also develop specific strategies to increase ROS resistance and to express the enzymatic activities necessary for ROS detoxification. Oxidative stress produces DNA damage and also induces responses, which could help the cell to restore the initial equilibrium. But if this is not possible, oxidative stress finally activates signals that will lead to cell death. High mobility group B (HMGB proteins have been previously related to the onset and progressions of cancers of different origins. The protein HMGB1 behaves as a redox sensor and its structural changes, which are conditioned by the oxidative environment, are associated with different functions of the protein. This review describes recent advances in the role of human HMGB proteins and other proteins interacting with them, in cancerous processes related to oxidative stress, with special reference to ovarian and prostate cancer. Their participation in the molecular mechanisms of resistance to cisplatin, a drug commonly used in chemotherapy, is also revised.

  11. Foraging segregation and genetic divergence between geographically proximate colonies of a highly mobile seabird

    Wiley, Anne E.; Welch, Andreanna J.; Ostrom, P.H.; James, Helen F.; Stricker, C.A.; Fleischer, R.C.; Gandhi, H.; Adams, J.; Ainley, D.G.; Duvall, F.; Holmes, N.; Hu, D.; Judge, S.; Penniman, J.; Swindle, K.A.

    2012-01-01

    Foraging segregation may play an important role in the maintenance of animal diversity, and is a proposed mechanism for promoting genetic divergence within seabird species. However, little information exists regarding its presence among seabird populations. We investigated genetic and foraging divergence between two colonies of endangered Hawaiian petrels (Pterodroma sandwichensis) nesting on the islands of Hawaii and Kauai using the mitochondrial Cytochrome b gene and carbon, nitrogen and hydrogen isotope values (?? 13C, ?? 15N and ??D, respectively) of feathers. Genetic analyses revealed strong differentiation between colonies on Hawaii and Kauai, with ?? ST = 0. 50 (p Feather ??D varied from -69 to 53???. This variation cannot be related solely to an isotopically homogeneous ocean water source or evaporative water loss. Instead, we propose the involvement of salt gland excretion. Our data demonstrate the presence of foraging segregation between proximately nesting seabird populations, despite high species mobility. This ecological diversity may facilitate population coexistence, and its preservation should be a focus of conservation strategies. ?? 2011 Springer-Verlag (outside the USA).

  12. Evolution of high mobility group nucleosome-binding proteins and its implications for vertebrate chromatin specialization.

    González-Romero, Rodrigo; Eirín-López, José M; Ausió, Juan

    2015-01-01

    High mobility group (HMG)-N proteins are a family of small nonhistone proteins that bind to nucleosomes (N). Despite the amount of information available on their structure and function, there is an almost complete lack of information on the molecular evolutionary mechanisms leading to their exclusive differentiation. In the present work, we provide evidence suggesting that HMGN lineages constitute independent monophyletic groups derived from a common ancestor prior to the diversification of vertebrates. Based on observations of the functional diversification across vertebrate HMGN proteins and on the extensive silent nucleotide divergence, our results suggest that the long-term evolution of HMGNs occurs under strong purifying selection, resulting from the lineage-specific functional constraints of their different protein domains. Selection analyses on independent lineages suggest that their functional specialization was mediated by bursts of adaptive selection at specific evolutionary times, in a small subset of codons with functional relevance-most notably in HMGN1, and in the rapidly evolving HMGN5. This work provides useful information to our understanding of the specialization imparted on chromatin metabolism by HMGNs, especially on the evolutionary mechanisms underlying their functional differentiation in vertebrates. © The Author 2014. Published by Oxford University Press on behalf of the Society for Molecular Biology and Evolution. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  13. Derived Requirements for Double Shell Tank (DST) High Level Waste (HLW) Auxiliary Solids Mobilization

    TEDESCHI, A.R.

    2000-02-28

    The potential need for auxiliary double-shell tank waste mixing and solids mobilization requires an evaluation of optional technologies. This document formalizes those operating and design requirements needed for further engineering evaluations.

  14. Derived Requirements for Double-Shell Tank (DST) High Level Waste (HLW) Auxiliary Solids Mobilization

    TEDESCHI, A.R.

    2000-01-01

    The potential need for auxiliary double-shell tank waste mixing and solids mobilization requires an evaluation of optional technologies. This document formalizes those operating and design requirements needed for further engineering evaluations

  15. FACTORS INFLUENCING MOBILE-LEARNING ADOPTION INTENTION: AN EMPIRICAL INVESTIGATION IN HIGH EDUCATION

    Ngo Tan Vu Khanh; Gwangyong Gim

    2014-01-01

    This study investigates the use of mobile phones and tablets for learning purposes among university students in Vietnam. For this purpose, the research is based on relevant technology acceptance literature and the Technology Acceptance Model (TAM) is proposed to analyze the adoption of mobile devices and smart phones by Vietnam students for accessing course materials, searching the web for information related to their discipline, sharing knowledge, conducting assignments etc. Employing struct...

  16. SAME4HPC: A Promising Approach in Building a Scalable and Mobile Environment for High-Performance Computing

    Karthik, Rajasekar [ORNL

    2014-01-01

    In this paper, an architecture for building Scalable And Mobile Environment For High-Performance Computing with spatial capabilities called SAME4HPC is described using cutting-edge technologies and standards such as Node.js, HTML5, ECMAScript 6, and PostgreSQL 9.4. Mobile devices are increasingly becoming powerful enough to run high-performance apps. At the same time, there exist a significant number of low-end and older devices that rely heavily on the server or the cloud infrastructure to do the heavy lifting. Our architecture aims to support both of these types of devices to provide high-performance and rich user experience. A cloud infrastructure consisting of OpenStack with Ubuntu, GeoServer, and high-performance JavaScript frameworks are some of the key open-source and industry standard practices that has been adopted in this architecture.

  17. Relaxation effects in ionic mobility and cluster formation: negative ions in SF6 at high pressures

    Juarez, A M; De Urquijo, J; Hinojosa, G; Hernandez-Avila, J L; Basurto, E

    2010-01-01

    The relaxation effects of the ionic mobility and the formation of negative-ion clusters in SF 6 are studied in this work. For this purpose, we have measured the mobility of negative ions in SF 6 over the pressure range 100-800 Torr at a fixed value of density-normalized electric field, E/N, of 20 Td (1 Townsend = 10 -17 V cm 2 ). The data obtained show a clear dependence of the negative-ion drift velocity on drift distance. It is observed that the drift velocity (mobility) reaches a steady-state value only for drift distances above 2 cm, over the studied pressure range. In addition to this, we have observed that the ionic mobility depends strongly on the gas pressure. An explanation of this dependence of the ionic mobility on gas pressure is given in terms of a negative-ion clustering formation process. It was found that the assumption of a linear dependence of the cluster ion mass on pressure provides a satisfactory explanation for the observed mobilities.

  18. Thermally Dried Ink-Jet Process for 6,13-Bis(triisopropylsilylethynyl)-Pentacene for High Mobility and High Uniformity on a Large Area Substrate

    Ryu, Gi Seong; Lee, Myung Won; Jeong, Seung Hyeon; Song, Chung Kun

    2012-05-01

    In this study we developed a simple ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene), which is known as a high-mobility soluble organic semiconductor, to achieve relatively high-mobility and high-uniformity performance for large-area applications. We analyzed the behavior of fluorescent particles in droplets and applied the results to determining a method of controlling the behavior of TIPS-pentacene molecules. The grain morphology of TIPS-pentacene varied depending on the temperature applied to the droplets during drying. We were able to obtain large and uniform grains at 46 °C without any “coffee stain”. The process was applied to a large-size organic thin-film transistor (OTFT) backplane for an electrophoretic display panel containing 192×150 pixels on a 6-in.-sized substrate. The average of mobilities of 36 OTFTs, which were taken from different locations of the backplane, was 0.44±0.08 cm2·V-1·s-1, with a small deviation of 20%, over a 6-in.-size area comprising 28,800 OTFTs. This process providing high mobility and high uniformity can be achieved by simply maintaining the whole area of the substrate at a specific temperature (46 °C in this case) during drying of the droplets.

  19. Thermally dried ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene for high mobility and high uniformity on a large area substrate

    Ryu, Gi Seong; Lee, Myung Won; Jeong, Seung Hyeon; Song, Chung Kun

    2012-01-01

    In this study we developed a simple ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene), which is known as a high-mobility soluble organic semiconductor, to achieve relatively high-mobility and high-uniformity performance for large-area applications. We analyzed the behavior of fluorescent particles in droplets and applied the results to determining a method of controlling the behavior of TIPS-pentacene molecules. The grain morphology of TIPS-pentacene varied depending on the temperature applied to the droplets during drying. We were able to obtain large and uniform grains at 46 degrees C without any "coffee stain". The process was applied to a large-size organic thin-film transistor (OTFT) backplane for an electrophoretic display panel containing 192 x 150 pixels on a 6-in.-sized substrate. The average of mobilities of 36 OTFTs, which were taken from different locations of the backplane, was 0.44 +/- 0.08 cm2.V-1.s-1, with a small deviation of 20%, over a 6-in.-size area comprising 28,800 OTFTs. This process providing high mobility and high uniformity can be achieved by simply maintaining the whole area of the substrate at a specific temperature (46 degrees C in this case) during drying of the droplets.

  20. Therapeutic potential of an anti-high mobility group box-1 monoclonal antibody in epilepsy.

    Zhao, Junli; Wang, Yi; Xu, Cenglin; Liu, Keyue; Wang, Ying; Chen, Liying; Wu, Xiaohua; Gao, Feng; Guo, Yi; Zhu, Junming; Wang, Shuang; Nishibori, Masahiro; Chen, Zhong

    2017-08-01

    Brain inflammation is a major factor in epilepsy, and the high mobility group box-1 (HMGB1) protein is known to contribute significantly to the generation of seizures. Here, we investigated the therapeutic potential of an anti-HMGB1 monoclonal antibody (mAb) in epilepsy. anti-HMGB1 mAb attenuated both acute seizure models (maximal electroshock seizure, pentylenetetrazole-induced and kindling-induced), and chronic epilepsy model (kainic acid-induced) in a dose-dependent manner. Meanwhile, the anti-HMGB1 mAb also attenuated seizure activities of human brain slices obtained from surgical resection from drug-resistant epilepsy patients. The mAb showed an anti-seizure effect with a long-term manner and appeared to be minimal side effects at even very high dose (no disrupted physical EEG rhythm and no impaired basic physical functions, such as body growth rate and thermoregulation). This anti-seizure effect of mAb results from its inhibition of translocated HMGB1 from nuclei following seizures, and the anti-seizure effect was absent in toll-like receptor 4 knockout (TLR4 -/- ) mice. Interestingly, the anti-HMGB1 mAb also showed a disease-modifying anti-epileptogenetic effect on epileptogenesis after status epileptics, which is indicated by reducing seizure frequency and improving the impaired cognitive function. These results indicate that the anti-HMGB1 mAb should be viewed as a very promising approach for the development of novel therapies to treat refractory epilepsy. Copyright © 2017 Elsevier Inc. All rights reserved.

  1. Field effect in the quantum Hall regime of a high mobility graphene wire

    Barraud, C., E-mail: cbarraud@phys.ethz.ch, E-mail: clement.barraud@univ-paris-diderot.fr; Choi, T.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich (Switzerland); Butti, P.; Shorubalko, I. [Swiss Federal Laboratories of Materials Science and Technologies, EMPA Elect. Metrol. Reliabil. Lab., CH-8600 Dübendorf (Switzerland); Taniguchi, T.; Watanabe, K. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-08-21

    In graphene-based electronic devices like in transistors, the field effect applied thanks to a gate electrode allows tuning the charge density in the graphene layer and passing continuously from the electron to the hole doped regime across the Dirac point. Homogeneous doping is crucial to understand electrical measurements and for the operation of future graphene-based electronic devices. However, recently theoretical and experimental studies highlighted the role of the electrostatic edge due to fringing electrostatic field lines at the graphene edges [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008); F. T. Vasko and I. V. Zozoulenko, Appl. Phys. Lett. 97, 092115 (2010)]. This effect originates from the particular geometric design of the samples. A direct consequence is a charge accumulation at the graphene edges giving a value for the density, which deviates from the simple picture of a plate capacitor and also varies along the width of the graphene sample. Entering the quantum Hall regime would, in principle, allow probing this accumulation thanks to the extreme sensitivity of this quantum effect to charge density and the charge distribution. Moreover, the presence of an additional and counter-propagating edge channel has been predicted [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008)] giving a fundamental aspect to this technological issue. In this article, we investigate this effect by tuning a high mobility graphene wire into the quantum Hall regime in which charge carriers probe the electrostatic potential at high magnetic field close to the edges. We observe a slight deviation to the linear shift of the quantum Hall plateaus with magnetic field and we study its evolution for different filling factors, which correspond to different probed regions in real space. We discuss the possible origins of this effect including an increase of the charge density towards the edges.

  2. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  3. Effects of the Effect of Ultra High Frequency Mobile Phone Radiation on Human Health.

    Moradi, Mosa; Naghdi, Nasrollah; Hemmati, Hamidreza; Asadi-Samani, Majid; Bahmani, Mahmoud

    2016-05-01

    Public and occupational exposure to electromagnetic fields due to the growing trend of electronic devices may cause adverse effects on human health. This paper describes the risk of mutation and sexual trauma and infertility in masculine sexual cell by mobile phone radiations. In this study, we measured the emitted dose from a radiofrequency device, such as switching high voltage at different frequencies using a scintillation detector. The switching high voltage power supply (HVPS) was built for the Single Photon Emission Computed Tomography (SPECT) system. For radiation dosimetry, we used an ALNOR scintillator that can measure gamma radiation. The simulation was performed by MATLAB software, and data from the International Commission on Non-Ionizing Radiation Protection (ICNIRP) were used to verify the simulation. We investigated the risks that result from the waves, according to a report by International Commission on Non Ionizing Radiation Protection (ICNIRP), to every organ of the body is defined by the beam and electromagnetic radiation from this electronic device on people. The results showed that the maximum personal dose over a 15-min period working at the mentioned HVPS did not exceed 0.31 μSV/h (with an aluminum shield). So, according to other sources of radiation, continuous working time of the system should not be more than 10 hours. Finally, a characteristic curve for secure working with modules at different frequencies was reported. The RF input signal to the body for maximum penetration depth (δ) and electromagnetic energy absorption rate (SAR) of biological tissue were obtained for each tissue. The results of this study and International Commission of Non Ionization Radiation Protection (ICNIRP) reports showed the people who spend more than 50 minutes a day using a cell phone could have early dementia or other thermal damage due to the burning of glucose in the brain.

  4. Effect of Ultra High Frequency Mobile Phone Radiation on Human Health

    Moradi, Mosa; Naghdi, Nasrollah; Hemmati, Hamidreza; Asadi-Samani, Majid; Bahmani, Mahmoud

    2016-01-01

    Introduction Public and occupational exposure to electromagnetic fields due to the growing trend of electronic devices may cause adverse effects on human health. This paper describes the risk of mutation and sexual trauma and infertility in masculine sexual cell by mobile phone radiations. Methods In this study, we measured the emitted dose from a radiofrequency device, such as switching high voltage at different frequencies using a scintillation detector. The switching high voltage power supply (HVPS) was built for the Single Photon Emission Computed Tomography (SPECT) system. For radiation dosimetry, we used an ALNOR scintillator that can measure gamma radiation. The simulation was performed by MATLAB software, and data from the International Commission on Non-Ionizing Radiation Protection (ICNIRP) were used to verify the simulation. Results We investigated the risks that result from the waves, according to a report by International Commission on Non Ionizing Radiation Protection (ICNIRP), to every organ of the body is defined by the beam and electromagnetic radiation from this electronic device on people. The results showed that the maximum personal dose over a 15-min period working at the mentioned HVPS did not exceed 0.31 μSV/h (with an aluminum shield). So, according to other sources of radiation, continuous working time of the system should not be more than 10 hours. Finally, a characteristic curve for secure working with modules at different frequencies was reported. The RF input signal to the body for maximum penetration depth (δ) and electromagnetic energy absorption rate (SAR) of biological tissue were obtained for each tissue. Conclusion The results of this study and International Commission of Non Ionization Radiation Protection (ICNIRP) reports showed the people who spend more than 50 minutes a day using a cell phone could have early dementia or other thermal damage due to the burning of glucose in the brain. PMID:27382458

  5. Self-assembled InAs quantum dots. Properties, modification and emission processes

    Schramm, A.

    2007-01-01

    In this thesis, structural, optical as well as electronic properties of self-assembled InAs quantum dots (QD) were studied by means of atomic force microscopy (AFM), photoluminescence (PL), capacitance spectroscopy (CV) and capacitance transient spectroscopy (DLTS). The quantum dots were grown with molecular beam epitaxy (MBE) and embedded in Schottky diodes for electrical characterization. In this work growth aspects as well as the electronic structures of QD were discussed. By varying the QD growth parameters it is possible to control the structural, and thus the optical and electronic properties of QD. Two methods are presented. Adjusting the QD growth temperature leads either to small QD with a high areal density or to high QDs with a low density. The structural changes of the QD are reflected in the changes of the optical and electronic properties. The second method is to introduce a growth interruption after capping the QD with thin cap layers. It was shown that capping with AlAs leads to a well-developed alternative to control the QD height and thus the ground-state energies of the QD. A post-growth method modifying the QD properties ist rapid thermal annealing (RTA). Raising the RTA temperature causes a lifting of the QD energy states with respect to the GaAs band edge energy due to In/Ga intermixing processes. A further main part of this work covers the emission processes of charge carriers in QD. Thermal emission, thermally assisted tunneling, and pure tunneling emission are studied by capacitance transient spectroscopy techniques. In DLTS experiments a strong impact of the electric field on the activation energies of electrons was found interfering the correct determination of the QD level energies. This behaviour can be explained by a thermally assisted tunneling model. A modified model taking the Coulomb interaction of occupied QD into account describes the emission rates of the electrons. In order to avoid several emission pathes in the experiments

  6. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  7. Studies on the controlled growth of InAs nanostructures on scission surfaces; Untersuchungen zum kontrollierten Wachstum von InAs-Nanostrukturen auf Spaltflaechen

    Bauer, J.

    2006-01-15

    The aim of this thesis was the controlled alignment of self-assembled InAs nano-structures on a {l_brace}110{r_brace}-oriented surface. The surface is prestructured with the atomic precision offered by molecular beam epitaxy, using the cleaved edge overgrowth-technique. On all samples grown within this work, the epitaxial template in the first growth step was deposited on a (001)GaAs substrate, while the InAs-layer forming the nanostructures during the second growth step was grown on cleaved {l_brace}110{r_brace}-GaAs surfaces. Atomic Force Microscopy (AFM) investigations demonstrate the formation of quantum dot (QD)-like nanostructures on top of the AlAs-stripes. X-ray diffraction measurements on large arrays of aligned quantum dots demonstrate that the quantum dots are formed of pure InAs. First investigations on the optical properties of these nanostructures were done using microphotoluminescence-spectroscopy with both high spatial and spectral resolution. (orig.)

  8. Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

    Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

    2018-01-01

    Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

  9. Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

    Sielski, Jan; Jeszka, Jeremiasz K.

    2012-01-01

    The development of new technology in the electronics industry requires new dielectric materials. It is also important to understand the charge-carrier transport mechanism in these materials. We examined the hole drift mobility in amorphous SiC dielectric thin films using the time-of-flight (TOF) method. Charge carriers were generated using an electron gun. The generated holes gave a dispersive TOF signal and the mobility was low. For electric field strengths above 4 x 10 5 V cm -1 the drift mobility shows a very strong dependence on the electric field and a weak temperature dependence (transport of ''high-energy'' charge carriers). At lower electric fields and for thermalized charge carriers the mobility is practically field independent and thermally activated. The observed phenomenon was attributed to the changes in the effective energy of the generated carriers moving in the high electric fields and consequently in the density of localized states taking part in the transport. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Mobility Optimization in LaxBa1-xSnO3 Thin Films Deposited via High Pressure Oxygen Sputtering

    Postiglione, William Michael

    BaSnO3 (BSO) is one of the most promising semiconducting oxides currently being explored for use in future electronic applications. BSO possesses a unique combination of high room temperature mobility (even at very high carrier concentrations, > 1019 cm-3), wide band gap, and high temperature stability, making it a potentially useful material for myriad applications. Significant challenges remain however in optimizing the properties and processing of epitaxial BSO, a critical step towards industrial applications. In this study we investigate the viability of using high pressure oxygen sputtering to produce high mobility La-doped BSO thin films. In the first part of our investigation we synthesized, using solid state reaction, phase-pure stoichiometric polycrystalline 2% La-doped BaSnO 3 for use as a target material in our sputtering system. We verified the experimental bulk lattice constant, 4.117 A, to be in good agreement with literature values. Next, we set out to optimize the growth conditions for DC sputtering of La doped BaSnO3. We found that mobility for all our films increased monotonically with deposition temperature, suggesting the optimum temperature for deposition is > 900 °C and implicating a likely improvement in transport properties with post-growth thermal anneal. We then preformed systematic studies aimed at probing the effects of varying thickness and deposition rate to optimize the structural and electronic transport properties in unbuffered BSO films. In this report we demonstrate the ability to grow 2% La BSO thin films with an effective dopant activation of essentially 100%. Our films showed fully relaxed (bulk), out-of-plane lattice parameter values when deposited on LaAlO3, MgO, and (LaAlO3)0.3(Sr2 TaAlO6)0.7 substrates, and slightly expanded out-of-plane lattice parameters for films deposited on SrTiO3, GdScO3, and PrScO3 substrates. The surface roughness's of our films were measured via AFM, and determined to be on the nm scale or better

  11. Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

    Ding, Xiangzhen; Yang, Shuai; Miao, Bin; Gu, Le; Gu, Zhiqi; Zhang, Jian; Wu, Baojun; Wang, Hong; Wu, Dongmin; Li, Jiadong

    2018-04-18

    A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

  12. A Unique Blend of 2-Fluorenyl-2-anthracene and 2-Anthryl-2-anthracence Showing White Emission and High Charge Mobility.

    Chen, Mengyun; Zhao, Yang; Yan, Lijia; Yang, Shuai; Zhu, Yanan; Murtaza, Imran; He, Gufeng; Meng, Hong; Huang, Wei

    2017-01-16

    White-light-emitting materials with high mobility are necessary for organic white-light-emitting transistors, which can be used for self-driven OLED displays or OLED lighting. In this study, we combined two materials with similar structures-2-fluorenyl-2-anthracene (FlAnt) with blue emission and 2-anthryl-2-anthracence (2A) with greenish-yellow emission-to fabricate OLED devices, which showed unusual solid-state white-light emission with the CIE coordinates (0.33, 0.34) at 10 V. The similar crystal structures ensured that the OTFTs based on mixed FlAnt and 2A showed high mobility of 1.56 cm 2  V -1  s -1 . This simple method provides new insight into the design of high-performance white-emitting transistor materials and structures. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Quantitative Fluorescence Sensing Through Highly Autofluorescent, Scattering, and Absorbing Media Using Mobile Microscopy

    Göröcs, Zoltán

    2016-09-13

    Compact and cost-effective systems for in vivo fluorescence and near-infrared imaging in combination with activatable reporters embedded inside the skin to sample interstitial fluid or blood can enable a variety of biomedical applications. However, the strong autofluorescence of human skin creates an obstacle for fluorescence-based sensing. Here we introduce a method for quantitative fluorescence sensing through highly autofluorescent, scattering, and absorbing media. For this, we created a compact and cost-effective fluorescence microscope weighing <40 g and used it to measure various concentrations of a fluorescent dye embedded inside a tissue phantom, which was designed to mimic the optical characteristics of human skin. We used an elliptical Gaussian beam excitation to digitally separate tissue autofluorescence from target fluorescence, although they severely overlap in both space and optical spectrum. Using ∼10-fold less excitation intensity than the safety limit for skin radiation exposure, we successfully quantified the density of the embedded fluorophores by imaging the skin phantom surface and achieved a detection limit of ∼5 × 105 and ∼2.5 × 107 fluorophores within ∼0.01 μL sample volume that is positioned 0.5 and 2 mm below the phantom surface, corresponding to a concentration of 105.9 pg/mL and 5.3 ng/mL, respectively. We also confirmed that this approach can track the spatial misalignments of the mobile microscope with respect to the embedded target fluorescent volume. This wearable microscopy platform might be useful for designing implantable biochemical sensors with the capability of spatial multiplexing to continuously monitor a panel of biomarkers and chronic conditions even at patients’ home.

  14. Quantitative Fluorescence Sensing Through Highly Autofluorescent, Scattering, and Absorbing Media Using Mobile Microscopy

    Gö rö cs, Zoltá n; Rivenson, Yair; Ceylan Koydemir, Hatice; Tseng, Derek; Troy, Tamara L.; Demas, Vasiliki; Ozcan, Aydogan

    2016-01-01

    Compact and cost-effective systems for in vivo fluorescence and near-infrared imaging in combination with activatable reporters embedded inside the skin to sample interstitial fluid or blood can enable a variety of biomedical applications. However, the strong autofluorescence of human skin creates an obstacle for fluorescence-based sensing. Here we introduce a method for quantitative fluorescence sensing through highly autofluorescent, scattering, and absorbing media. For this, we created a compact and cost-effective fluorescence microscope weighing <40 g and used it to measure various concentrations of a fluorescent dye embedded inside a tissue phantom, which was designed to mimic the optical characteristics of human skin. We used an elliptical Gaussian beam excitation to digitally separate tissue autofluorescence from target fluorescence, although they severely overlap in both space and optical spectrum. Using ∼10-fold less excitation intensity than the safety limit for skin radiation exposure, we successfully quantified the density of the embedded fluorophores by imaging the skin phantom surface and achieved a detection limit of ∼5 × 105 and ∼2.5 × 107 fluorophores within ∼0.01 μL sample volume that is positioned 0.5 and 2 mm below the phantom surface, corresponding to a concentration of 105.9 pg/mL and 5.3 ng/mL, respectively. We also confirmed that this approach can track the spatial misalignments of the mobile microscope with respect to the embedded target fluorescent volume. This wearable microscopy platform might be useful for designing implantable biochemical sensors with the capability of spatial multiplexing to continuously monitor a panel of biomarkers and chronic conditions even at patients’ home.

  15. High mobility group A1 protein modulates autophagy in cancer cells.

    Conte, Andrea; Paladino, Simona; Bianco, Gaia; Fasano, Dominga; Gerlini, Raffaele; Tornincasa, Mara; Renna, Maurizio; Fusco, Alfredo; Tramontano, Donatella; Pierantoni, Giovanna Maria

    2017-11-01

    High Mobility Group A1 (HMGA1) is an architectural chromatin protein whose overexpression is a feature of malignant neoplasias with a causal role in cancer initiation and progression. HMGA1 promotes tumor growth by several mechanisms, including increase of cell proliferation and survival, impairment of DNA repair and induction of chromosome instability. Autophagy is a self-degradative process that, by providing energy sources and removing damaged organelles and misfolded proteins, allows cell survival under stress conditions. On the other hand, hyper-activated autophagy can lead to non-apoptotic programmed cell death. Autophagy deregulation is a common feature of cancer cells in which has a complex role, showing either an oncogenic or tumor suppressor activity, depending on cellular context and tumor stage. Here, we report that depletion of HMGA1 perturbs autophagy by different mechanisms. HMGA1-knockdown increases autophagosome formation by constraining the activity of the mTOR pathway, a major regulator of autophagy, and transcriptionally upregulating the autophagy-initiating kinase Unc-51-like kinase 1 (ULK1). Consistently, functional experiments demonstrate that HMGA1 binds ULK1 promoter region and negatively regulates its transcription. On the other hand, the increase in autophagosomes is not associated to a proportionate increase in their maturation. Overall, the effects of HMGA1 depletion on autophagy are associated to a decrease in cell proliferation and ultimately impact on cancer cells viability. Importantly, silencing of ULK1 prevents the effects of HMGA1-knockdown on cellular proliferation, viability and autophagic activity, highlighting how these effects are, at least in part, mediated by ULK1. Interestingly, this phenomenon is not restricted to skin cancer cells, as similar results have been observed also in HeLa cells silenced for HMGA1. Taken together, these results clearly indicate HMGA1 as a key regulator of the autophagic pathway in cancer cells

  16. Potentiation of NMDA receptor-dependent cell responses by extracellular high mobility group box 1 protein.

    Marco Pedrazzi

    Full Text Available BACKGROUND: Extracellular high mobility group box 1 (HMGB1 protein can operate in a synergistic fashion with different signal molecules promoting an increase of cell Ca(2+ influx. However, the mechanisms responsible for this effect of HMGB1 are still unknown. PRINCIPAL FINDINGS: Here we demonstrate that, at concentrations of agonist per se ineffective, HMGB1 potentiates the activation of the ionotropic glutamate N-methyl-D-aspartate receptor (NMDAR in isolated hippocampal nerve terminals and in a neuroblastoma cell line. This effect was abolished by the NMDA channel blocker MK-801. The HMGB1-facilitated NMDAR opening was followed by activation of the Ca(2+-dependent enzymes calpain and nitric oxide synthase in neuroblastoma cells, resulting in an increased production of NO, a consequent enhanced cell motility, and onset of morphological differentiation. We have also identified NMDAR as the mediator of HMGB1-stimulated murine erythroleukemia cell differentiation, induced by hexamethylenebisacetamide. The potentiation of NMDAR activation involved a peptide of HMGB1 located in the B box at the amino acids 130-139. This HMGB1 fragment did not overlap with binding sites for other cell surface receptors of HMGB1, such as the advanced glycation end products or the Toll-like receptor 4. Moreover, in a competition assay, the HMGB1((130-139 peptide displaced the NMDAR/HMGB1 interaction, suggesting that it comprised the molecular and functional site of HMGB1 regulating the NMDA receptor complex. CONCLUSION: We propose that the multifunctional cytokine-like molecule HMGB1 released by activated, stressed, and damaged or necrotic cells can facilitate NMDAR-mediated cell responses, both in the central nervous system and in peripheral tissues, independently of other known cell surface receptors for HMGB1.

  17. Mobile natural gas leak surveys indicate that two utilities have high false negative rates

    von Fischer, J. C.; Brewer, P. E.; Chamberlain, S.; Gaylord, A.; von Fischer, J.

    2016-12-01

    In the distribution systems that carry natural gas to consumers, leaks need to be discovered for safety reasons and to reduce greenhouse gas emissions. However, few utilities have adopted newer laser-based technologies that have greater sensitivity and precision, and instead rely on "industry standard" equipment that is far less sensitive. In partnership with the Environmental Defense Fund and Google, we mapped natural gas leaks in the domains of two anonymous utilities (Utility "A" and "B") using high sensitivity Picarro methane analyzers in Google Street View Cars. Surprisingly, when we shared these results with utilities, their survey crews were unable to find most of the leaks that our survey indicated (84% in A and 80% in B). To investigate this phenomenon, our team visited a subset of the leaks in each utility domain (n=32 in A and n=30 in B), and worked alongside utility surveyors to search the leak indication area, using a Los Gatos Research ultraportable methane analyzer to pinpoint leak locations. We found evidence of natural gas leaks at 69% and 68% of the locations in Utilities A and B respectively where survey crews had found nothing. We describe this as a "false negative" rate for the utility because the utility survey falsely indicated that there was no leak at these locations. Of these false negatives, 7% (n=2 of 32 in A, n=2 of 30 in B) were determined to be Grade 1 leaks requiring immediate repair due to high safety risk. Instrument sensitivity appears to explain some of the false negative rates. In particular, use of some industry standard equipment appears to have created a false sense of confidence among utility surveyors that leaks were not present. However, there was also evidence of communication failures and that surveyors did not use optimal approaches in their search. Based on these findings, we suggest that: 1) mobile deployment of high-precision methane analyzers can help find more natural gas leaks, and 2) use of some hand-held survey

  18. Investigation of drift gas selectivity in high resolution ion mobility spectrometry with mass spectrometry detection.

    Matz, Laura M; Hill, Herbert H; Beegle, Luther W; Kanik, Isik

    2002-04-01

    Recent studies in electrospray ionization (ESI)/ion mobility spectrometry (IMS) have focussed on employing different drift gases to alter separation efficiency for some molecules. This study investigates four structurally similar classes of molecules (cocaine and metabolites, amphetamines, benzodiazepines, and small peptides) to determine the effect of structure on relative mobility changes in four drift gases (helium, nitrogen, argon, carbon dioxide). Collision cross sections were plotted against drift gas polarizability and a linear relationship was found for the nineteen compounds evaluated in the study. Based on the reduced mobility database, all nineteen compounds could be separated in one of the four drift gases, however, the drift gas that provided optimal separation was specific for the two compounds.

  19. High mobility 2D electron gas in CdTe/CdMgTe heterostructures

    Karczewski, G.; Jaroszynski, J.; Kurowski, M.; Barcz, A.; Wojtowicz, T.; Kossut, J.

    1997-01-01

    We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd 1-y Mg y Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd 1-y Mg y Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10 5 cm 2 /(Vs). This is the highest mobility reported in wide-gap II-VI materials

  20. Phase III trial of high- vs. low-dose-rate interstitial radiotherapy for early mobile tongue cancer

    Inoue, Takehiro; Inoue, Toshihiko; Yoshida, Ken; Yoshioka, Yasuo; Shimamoto, Shigetoshi; Tanaka, Eiichi; Yamazaki, Hideya; Shimizutani, Kimishige; Teshima, Teruki; Furukawa, Souhei

    2001-01-01

    Purpose: Early mobile tongue cancer can be controlled with interstitial radiotherapy (ISRT). We carried out a Phase III trial to compare the treatment results of low-dose-rate (Ld) ISRT and high-dose-rate (HDR) ISRT for early mobile tongue cancer. Methods and Materials: From April 1992 through October 1996, 59 patients with cancer of the early mobile tongue were registered in this Phase III study. Eight patients were excluded from the evaluation because of violations of the requirements for this study. Of 51 eligible patients, 26 patients were treated with LDR-ISRT (70 Gy/4-9 days) and 25 patients with HDR-ISRT (60 Gy/10 fractions/1 week). For the hyperfractionated HDR-ISRT, the time interval between 2 fractions was more than 6 h. Results: Five-year local control rates of the LDR and HDR groups were 84% and 87% respectively. Nodal metastasis occurred in 6 patients in each group. Five-year nodal control rates of the LDR and HDR groups were 77% and 76%, respectively. Conclusion: Hyperfractionated HDR-ISRT for early mobile tongue cancer has the same local control compared with continuous LDR-ISRT. Hyperfractionated HDR-ISRT is an alternative treatment for continuous LDR-ISRT

  1. Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method.

    Yuan, Yongbo; Giri, Gaurav; Ayzner, Alexander L; Zoombelt, Arjan P; Mannsfeld, Stefan C B; Chen, Jihua; Nordlund, Dennis; Toney, Michael F; Huang, Jinsong; Bao, Zhenan

    2014-01-01

    Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43 cm(2) Vs(-1) (25 cm(2) Vs(-1) on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.

  2. Electron drift time in silicon drift detectors: A technique for high precision measurement of electron drift mobility

    Castoldi, A.; Rehak, P.

    1995-01-01

    This paper presents a precise absolute measurement of the drift velocity and mobility of electrons in high resistivity silicon at room temperature. The electron velocity is obtained from the differential measurement of the drift time of an electron cloud in a silicon drift detector. The main features of the transport scheme of this class of detectors are: the high uniformity of the electron motion, the transport of the signal electrons entirely contained in the high-purity bulk, the low noise timing due to the very small anode capacitance (typical value 100 fF), and the possibility to measure different drift distances, up to the wafer diameter, in the same semiconductor sample. These features make the silicon drift detector an optimal device for high precision measurements of carrier drift properties. The electron drift velocity and mobility in a 10 kΩ cm NTD n-type silicon wafer have been measured as a function of the electric field in the range of possible operation of a typical drift detector (167--633 V/cm). The electron ohmic mobility is found to be 1394 cm 2 /V s. The measurement precision is better than 1%. copyright 1995 American Institute of Physics

  3. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

    Fortunato, Elvira M.C.; Barquinha, Pedro M.C.; Pimentel, Ana C.M.B.G.; Goncalves, Alexandra M.F.; Marques, Antonio J.S.; Martins, Rodrigo F.P.; Pereira, Luis M.N.

    2004-01-01

    We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a saturation mobility of 27 cm 2 /V s, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3x10 5 . The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics

  4. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

    Chowdhury, Subhra; Biswas, Dhrubes; Chattaraj, Swarnabha

    2015-01-01

    For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current–voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure. (paper)

  5. High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

    Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it; Barra, M.; Ciccullo, F.; Cassinese, A. [CNR-SPIN and Physics Department, University of Naples, Piazzale Tecchio 80, I-80125 Naples (Italy); Toccoli, T.; Aversa, L.; Tatti, R.; Verucchi, R. [IMEM-CNR-FBK Division of Trento, Via alla Cascata 56/C, I-38123 Povo (Italy); Iannotta, S. [IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma (Italy)

    2014-04-07

    In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

  6. International student mobility and highly skilled migration: a comparative study of Canada, the United States, and the United Kingdom.

    She, Qianru; Wotherspoon, Terry

    2013-12-01

    Against the backdrop of demographic change and economic reconfiguration, recruiting international students, especially those at tertiary level, has drawn growing attention from advanced economies as part of a broad strategy to manage highly skilled migration. This comparative study focuses on three English speaking countries receiving international students: Canada, the United States, and the United Kingdom. International student policies, in particular entry and immigration regulations, and the trends in student mobility since the late 1990s are examined drawing on secondary data. By exploring the issue from the political economy perspectives, this study identifies distinct national strategies for managing student mobility, determines key factors shaping the environment of student migration in each nation, and addresses the deficiency of human capital theory in the analysis of global competition for high skills.

  7. New Approaches to Capture High Frequency Agricultural Dynamics in Africa through Mobile Phones

    Evans, T. P.; Attari, S.; Plale, B. A.; Caylor, K. K.; Estes, L. D.; Sheffield, J.

    2015-12-01

    Crop failure early warning systems relying on remote sensing constitute a new critical resource to assess areas where food shortages may arise, but there is a disconnect between the patterns of crop production on the ground and the environmental and decision-making dynamics that led to a particular crop production outcome. In Africa many governments use mid-growing season household surveys to get an on-the-ground assessment of current agricultural conditions. But these efforts are cost prohibitive over large scales and only offer a one-time snapshot at a particular time point. They also rely on farmers to recall past decisions and farmer recall may be imperfect when answering retrospectively on a decision made several months back (e.g. quantity of seed planted). We introduce a novel mobile-phone based approach to acquire information from farmers over large spatial extents, at high frequency at relatively low-cost compared to household survey approaches. This system makes compromises in number of questions which can feasibly be asked of a respondent (compared to household interviews), but the benefit of capturing weekly data from farmers is very exciting. We present data gathered from farmers in Kenya and Zambia to understand key dimensions of agricultural decision making such as choice of seed variety/planting date, frequency and timing of weeding/fertilizing and coping strategies such as pursuing off-farm labor. A particularly novel aspect of this work is reporting from farmers of what their expectation of end-season harvest will be on a week-by-week basis. Farmer's themselves can serve as sentinels of crop failure in this system. And farmers responses to drought are as much driven by their expectations of looming crop failure that may be different from that gleaned from remote sensing based assessment. This work is one piece of a larger design to link farmers to high-density meteorological data in Africa as an additional tool to improve crop failure early warning

  8. Technical baseline description of high-level waste and low-activity waste feed mobilization and delivery

    Papp, I.G.

    1997-01-01

    This document is a compilation of information related to the high-level waste (HLW) and low-activity waste (LAW) feed staging, mobilization, and transfer/delivery issues. Information relevant to current Tank Waste Remediation System (TWRS) inventories and activities designed to feed the Phase I Privatization effort at the Hanford Site is included. Discussions on the higher level Phase II activities are offered for a perspective on the interfaces

  9. Effects of Intradistrict School Mobility and High Student Turnover Rates on Early Reading Achievement

    LeBoeuf, Whitney A.; Fantuzzo, John W.

    2018-01-01

    The primary aim of this study was to assess the relations between concurrent, cumulative, and contextual intradistrict school mobility and early reading achievement. Longitudinal administrative school records were used for an entire cohort of students in a large urban district from first through third grade. Findings indicated that students with a…

  10. Performance of high-level and low-level control for coordination of mobile robots

    Adinandra, S.; Caarls, J.; Kostic, D.; Nijmeijer, H.

    2010-01-01

    We analyze performance of different strategies for coordinated control of mobile robots. By considering an environment of a distribution center, the robots should transport goods from place A to place B while maintaining the desired formation and avoiding collisions. We evaluate performance of two

  11. New Model of Mobile Learning for the High School Students Preparing for the Unified State Exam

    Khasianov, Airat; Shakhova, Irina

    2017-01-01

    In this paper we study a new model of mobile learning for the Unified State Exam ("USE") preparation in Russian Federation. "USE"--is the test school graduates need to pass in order to obtain Russian matura. In recent years the efforts teachers put for preparation of their students to the "USE" diminish how well the…

  12. Towards High Power Density Metal Supported Solid Oxide Fuel Cell for Mobile Applications

    Nielsen, Jimmi; Persson, Åsa H.; Muhl, Thuy Thanh

    2018-01-01

    For use of metal supported solid oxide fuel cell (MS-SOFC) in mobile applications it is important to reduce the thermal mass to enable fast startup, increase stack power density in terms of weight and volume and reduce costs. In the present study, we report on the effect of reducing the Technical...

  13. Towards High Power Density Metal Supported Solid Oxide Fuel Cell for Mobile Applications

    Nielsen, Jimmi; Persson, Åsa Helen; Muhl, Thuy

    2017-01-01

    For use of metal supported SOFC in mobile applications it is important to reduce the thermal mass to enable fast start up, increase stack power density in terms of weight and volume and reduce costs. In the present study, we report on the effect of reducing the support layer thickness of 313 μm...

  14. High Charge Mobility of a Perylene Bisimide Dye with Hydrogen-bond Formation Group

    2005-01-01

    A perylene bisimide dye covalently bonded with a hydrogen-bond formation group of 1,3, 5-triazine-2, 4-diamine has been synthesized. Its casting films show a charge carrier mobility over 10-3 cm2/Vs, which is in the range of the highest values found for other promising charge transport materials suitable for solution processable technique.

  15. Schooling for Social Mobility: High School Reform for College Access and Success

    Hammack, Floyd M.

    2016-01-01

    This article addresses what schools that seek to promote social mobility as opposed to status maintenance among their students really ask of them. Focusing on several prominent charter school organizations, the article details the social and behavioral expectations of the schools and understands them through an application of Goffman's work on…

  16. High inter-tester reliability of the new mobility score in patients with hip fracture

    Kristensen, M.T.; Bandholm, T.; Foss, N.B.

    2008-01-01

    OBJECTIVE: To assess the inter-tester reliability of the New Mobility Score in patients with acute hip fracture. DESIGN: An inter-tester reliability study. SUBJECTS: Forty-eight consecutive patients with acute hip fracture at a median age of 84 (interquartile range, 76-89) years; 40 admitted from...

  17. Retinol-induced changes in the phosphorylation levels of histones and high mobility group proteins from Sertoli cells

    Moreira J.C.F.

    2000-01-01

    Full Text Available Chromatin proteins play a role in the organization and functions of DNA. Covalent modifications of nuclear proteins modulate their interactions with DNA sequences and are probably one of the multiple factors involved in the process of switch on/off transcriptionally active regions of DNA. Histones and high mobility group proteins (HMG are subject to many covalent modifications that may modulate their capacity to bind to DNA. We investigated the changes induced in the phosphorylation pattern of cultured Wistar rat Sertoli cell histones and high mobility group protein subfamilies exposed to 7 µM retinol for up to 48 h. In each experiment, 6 h before the end of the retinol treatment each culture flask received 370 KBq/ml [32P]-phosphate. The histone and HMGs were isolated as previously described [Moreira et al. Medical Science Research (1994 22: 783-784]. The total protein obtained by either method was quantified and electrophoresed as described by Spiker [Analytical Biochemistry (1980 108: 263-265]. The gels were stained with Coomassie brilliant blue R-250 and the stained bands were cut and dissolved in 0.5 ml 30% H2O2 at 60oC for 12 h. The vials were chilled and 5.0 ml scintillation liquid was added. The radioactivity in each vial was determined with a liquid scintillation counter. Retinol treatment significantly changed the pattern of each subfamily of histone and high mobility group proteins.

  18. Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.

    Liu, Xinke; Ang, Kah-Wee; Yu, Wenjie; He, Jiazhu; Feng, Xuewei; Liu, Qiang; Jiang, He; Dan Tang; Wen, Jiao; Lu, Youming; Liu, Wenjun; Cao, Peijiang; Han, Shun; Wu, Jing; Liu, Wenjun; Wang, Xi; Zhu, Deliang; He, Zhubing

    2016-04-22

    Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2 high-k gate dielectric using a low temperature CMOS process. The fabricated devices were shown to demonstrate a near ideal subthreshold swing (SS) of ~69 mV/dec and a room temperature hole mobility of exceeding >400 cm(2)/Vs. These figure-of-merits are benchmarked to be the best-of-its-kind, which outperform previously reported BP transistors realized on traditional SiO2 gate dielectric. X-ray photoelectron spectroscopy (XPS) analysis further reveals the evidence of a more chemically stable BP when formed on HfO2 high-k as opposed to SiO2, which gives rise to a better interface quality that accounts for the SS and hole mobility improvement. These results unveil the potential of black phosphorus as an emerging channel material for future nanoelectronic device applications.

  19. Service-oriented workflow to efficiently and automatically fulfill products in a highly individualized web and mobile environment

    Qiao, Mu

    2015-03-01

    Service Oriented Architecture1 (SOA) is widely used in building flexible and scalable web sites and services. In most of the web or mobile photo book and gifting business space, the products ordered are highly variable without a standard template that one can substitute texts or images from similar to that of commercial variable data printing. In this paper, the author describes a SOA workflow in a multi-sites, multi-product lines fulfillment system where three major challenges are addressed: utilization of hardware and equipment, highly automation with fault recovery, and highly scalable and flexible with order volume fluctuation.

  20. Disulfide high mobility group box-1 causes bladder pain through bladder Toll-like receptor 4.

    Ma, Fei; Kouzoukas, Dimitrios E; Meyer-Siegler, Katherine L; Westlund, Karin N; Hunt, David E; Vera, Pedro L

    2017-05-25

    Bladder pain is a prominent symptom in several urological conditions (e.g. infection, painful bladder syndrome/interstitial cystitis, cancer). Understanding the mechanism of bladder pain is important, particularly when the pain is not accompanied by bladder pathology. Stimulation of protease activated receptor 4 (PAR4) in the urothelium results in bladder pain through release of urothelial high mobility group box-1 (HMGB1). HGMB1 has two functionally active redox states (disulfide and all-thiol) and it is not known which form elicits bladder pain. Therefore, we investigated whether intravesical administration of specific HMGB1 redox forms caused abdominal mechanical hypersensitivity, micturition changes, and bladder inflammation in female C57BL/6 mice 24 hours post-administration. Moreover, we determined which of the specific HMGB1 receptors, Toll-like receptor 4 (TLR4) or receptor for advanced glycation end products (RAGE), mediate HMGB1-induced changes. Disulfide HMGB1 elicited abdominal mechanical hypersensitivity 24 hours after intravesical (5, 10, 20 μg/150 μl) instillation. In contrast, all-thiol HMGB1 did not produce abdominal mechanical hypersensitivity in any of the doses tested (1, 2, 5, 10, 20 μg/150 μl). Both HMGB1 redox forms caused micturition changes only at the highest dose tested (20 μg/150 μl) while eliciting mild bladder edema and reactive changes at all doses. We subsequently tested whether the effects of intravesical disulfide HMGB1 (10 μg/150 μl; a dose that did not produce inflammation) were prevented by systemic (i.p.) or local (intravesical) administration of either a TLR4 antagonist (TAK-242) or a RAGE antagonist (FPS-ZM1). Systemic administration of either TAK-242 (3 mg/kg) or FPS-ZM1 (10 mg/kg) prevented HMGB1 induced abdominal mechanical hypersensitivity while only intravesical TLR4 antagonist pretreatment (1.5 mg/ml; not RAGE) had this effect. The disulfide form of HMGB1 mediates bladder pain directly (not

  1. High mobility group protein DSP1 negatively regulates HSP70 transcription in Crassostrea hongkongensis

    Miao, Zongyu; Xu, Delin; Cui, Miao; Zhang, Qizhong, E-mail: zhangqzdr@126.com

    2016-06-10

    HSP70 acts mostly as a molecular chaperone and plays important roles in facilitating the folding of nascent peptides as well as the refolding or degradation of the denatured proteins. Under stressed conditions, the expression level of HSP70 is upregulated significantly and rapidly, as is known to be achieved by various regulatory factors controlling the transcriptional level. In this study, a high mobility group protein DSP1 was identified by DNA-affinity purification from the nuclear extracts of Crassostrea hongkongensis using the ChHSP70 promoter as a bait. The specific interaction between the prokaryotically expressed ChDSP1 and the FITC-labeled ChHSP70 promoter was confirmed by EMSA analysis. ChDSP1 was shown to negatively regulate ChHSP70 promoter expression by Luciferase Reporter Assay in the heterologous HEK293T cells. Both ChHSP70 and ChDSP1 transcriptions were induced by either thermal or CdCl{sub 2} stress, while the accumulated expression peaks of ChDSP1 were always slightly delayed when compared with that of ChHSP70. This indicates that ChDSP1 is involved, very likely to exert its suppressive role, in the recovery of the ChHSP70 expression from the induced level to its original state. This study is the first to report negative regulator of HSP70 gene transcription, and provides novel insights into the mechanisms controlling heat shock protein expression. -- Highlights: •HMG protein ChDSP1 shows affinity to ChHSP70 promoter in Crassostrea hongkongensis. •ChDSP1 negatively regulates ChHSP70 transcription. •ChHSP70 and ChDSP1 transcriptions were coordinately induced by thermal/Cd stress. •ChDSP1 may contribute to the recovery of the induced ChHSP70 to its original state. •This is the first report regarding negative regulator of HSP70 transcription.

  2. Clinical Value of High Mobility Group Box 1 and the Receptor for Advanced Glycation End-products in Head and Neck Cancer: A Systematic Review

    Nguyen, Austin

    2016-04-01

    Full Text Available Introduction High mobility group box 1 is a versatile protein involved in gene transcription, extracellular signaling, and response to inflammation. Extracellularly, high mobility group box 1 binds to several receptors, notably the receptor for advanced glycation end-products. Expression of high mobility group box 1 and the receptor for advanced glycation end-products has been described in many cancers. Objectives To systematically review the available literature using PubMed and Web of Science to evaluate the clinical value of high mobility group box 1 and the receptor for advanced glycation end-products in head and neck squamous cell carcinomas. Data synthesis A total of eleven studies were included in this review. High mobility group box 1 overexpression is associated with poor prognosis and many clinical and pathological characteristics of head and neck squamous cell carcinomas patients. Additionally, the receptor for advanced glycation end-products demonstrates potential value as a clinical indicator of tumor angiogenesis and advanced staging. In diagnosis, high mobility group box 1 demonstrates low sensitivity. Conclusion High mobility group box 1 and the receptor for advanced glycation end-products are associated with clinical and pathological characteristics of head and neck squamous cell carcinomas. Further investigation of the prognostic and diagnostic value of these molecules is warranted.

  3. Interaction and Cooperative Nucleation of InAsSbP Quantum Dots and Pits on InAs(100 Substrate

    Gambaryan Karen

    2009-01-01

    Full Text Available Abstract An example of InAsSbP quaternary quantum dots (QDs, pits and dots–pits cooperative structures’ growth on InAs(100 substrates by liquid phase epitaxy (LPE is reported. The interaction and surface morphology of the dots–pits combinations are investigated by the high-resolution scanning electron microscope. Bimodal growth mechanism for the both QDs and pits nucleation is observed. Cooperative structures consist of the QDs banded by pits, as well as the “large” pits banded by the quantum wires are detected. The composition of the islands and the pits edges is found to be quaternary, enriched by antimony and phosphorus, respectively. This repartition is caused by dissociation of the wetting layer, followed by migration (surface diffusion of the Sb and P atoms in opposite directions. The “small” QDs average density ranges from 0.8 to 2 × 109 cm−2, with heights and widths dimensions from 2 to 20 nm and 5 to 45 nm, respectively. The average density of the “small” pits is equal to (6–10 × 109 cm−2 with dimensions of 5–40 nm in width and depth. Lifshits–Slezov-like distribution for the amount and surface density of both “small” QDs and pits versus their average diameter is experimentally detected. A displacement of the absorption edge toward the long wavelength region and enlargement toward the short wavelength region is detected by the Fourier transform infrared spectrometry.

  4. Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire.

    Wang, Ji-Yin; Huang, Shaoyun; Huang, Guang-Yao; Pan, Dong; Zhao, Jianhua; Xu, H Q

    2017-07-12

    A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurements show that the charge stability diagram of the TQD can be represented by three kinds of current lines of different slopes and a simulation performed based on a capacitance matrix model confirms the experiment. We show that each current line observable in the charge stability diagram is associated with a case where a QD is on resonance with the Fermi level of the source and drain reservoirs. At a triple point where two current lines of different slopes move together but show anticrossing, two QDs are on resonance with the Fermi level of the reservoirs. We demonstrate that an energetically degenerated quadruple point at which all three QDs are on resonance with the Fermi level of the reservoirs can be built by moving two separated triple points together via sophistically tuning of energy levels in the three QDs. We also demonstrate the achievement of direct coherent electron transfer between the two remote QDs in the TQD, realizing a long-distance coherent quantum bus operation. Such a long-distance coherent coupling could be used to investigate coherent spin teleportation and superexchange effects and to construct a spin qubit with an improved long coherent time and with spin state detection solely by sensing the charge states.

  5. Fe-contacts on InAs(100) and InP(100) characterised by conversion electron Mössbauer spectroscopy

    Damsgaard, Christian Danvad; Gunnlaugsson, H.P; Weyer, G.

    2005-01-01

    We have grown 4 nm thin films of Fe-57 on InAs(100) and InP(100) surfaces by use of MBE and studied the samples by Fe-57 conversion electron Mossbauer spectroscopy. In the case of InAs, the Mossbauer spectrum showed a sextet due to alpha-Fe and a further magnetically split component with slightly...

  6. Characterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μm

    Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Fiore, A.; Dagli, N.

    2007-01-01

    In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss

  7. Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMBE

    Yuan, Xiaowen [Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Wuhan (China); Chinese Academy of Sciences, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai (China); Wang, Qi; Li, Senlin; Chen, C.Q. [Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Wuhan (China); Sun, Liaoxin; Luo, X.D.; Zhang, Bo [Chinese Academy of Sciences, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai (China)

    2015-04-01

    In this letter, the optical properties of InAs (QDs)/GaInAsP on InP substrate grown by gas source molecular beam epitaxy are investigated. By measuring and analyzing the photoluminescence spectra of InAs (QDs)/GaInAsP/InP at different temperatures and excitation powers, the origin of each emission is verified. And it is found that, with the temperature increasing, the emission intensity of GaInAsP wetting layers decreases firstly (T < 150 K) and then increases from 160 K to room temperature. By analyzing the experimental results of three samples with different QDs' sizes, a competitive emission between InAs QDs and GaInAsP wetting layers is confirmed. (orig.)

  8. Nonlinear absorption and receptivity of the third order in InAs infrared region

    Musayev, M.A.

    2005-01-01

    Nonlinear absorption and receptivity of the third order and coefficient nonlinear absorption in InAs n-type with different degree of alloying was measured. Obtained score considerably exceed sense, calculated on the basis of the models describing nonlinear receptivity of electrons, situated in the nonparabolic area of conductivity. It was shown that, observable deviations withdraw; if in the calculation apply energy dissipation of electrons. Growth of the efficiency under four-wave interaction in low-energy-gap semiconductors confines nonlinear absorption of interacting waves

  9. Influence of nitrogen on the growth and the properties of InAs quantum dots

    Schumann, O.

    2004-01-01

    This work investigates the influence of nitrogen incorporation on the growth and the optical properties of InAs quantum dots on GaAs(001) substrates. On the basis of systematic growth interruptions it was shown that the large quantum dots nucleate at dislocations, which are already formed during the growth of the wetting layer. After solving the growth problems, the influence of different combinations of matrix layers on the structural and optical properties of the quantum dots was investigated in the second part of this work. The strain and bandgap of these layers were varied systematically. (orig.)

  10. The third order nonlinear susceptibility of InAs at infrared region

    Musayev, M.A.

    2008-01-01

    Nonlinear susceptibilities of the third order and coefficient of nonlinear absorption in InAs n-type with a different degree of a doping have been measured. The values of the third order nonlinear susceptibilities have derived from these measurements essentially exceed the values calculated on the basis of model featuring nonlinear susceptibility of electrons, being in conduction-band nonparabolicity. It has been shown that the observable discrepancy has been eliminated, if in calculation a dissipation of energy of electrons has been considered. Growth of efficiency at four-wave mixingin narrow-gap semiconductors has been restricted to nonlinear absorption of interacting waves

  11. Jačina sveze adhezijskih materijala na tvrda zubna tkiva

    Žagar, Polona

    2017-01-01

    Adhezija se odnosi na povezivanje atoma i molekula na kontaktnim površinama različitih materijala. Adhezijske sustave možemo podjeliti prema interakciji sa tvrdim zubnim tkivima na jetkajuće ispirajuće, samojetkajuće i staklenoionomerne sustave. Univerzalni adhezivi su najnovija generacija adheziva na tržištu. Mogu se koristiti kao jetkajući ispirajući i samojetkajući sustavi. U ovom radu je ispitivana jačina adhezijske sveze s caklinom jetkajuće ispirajućim i univerzalnim adheziv...

  12. ODNOS ZAPOSLENIH V VRTCU DO ZDRAVEGA NAČINA ŽIVLJENJA

    Cesarec, Anja

    2009-01-01

    Diplomsko delo predstavlja temo odnos zaposlenih v vrtcu do zdravega načina življenja. Predstavili smo zdravje, dejavnike, ki vplivajo na stopnjo zdravja in dejavnike, ki vplivajo na življenjski slog, kot so kajenje tobaka, način prehranjevanja, telesno aktivnost, uživanje nedovoljenih drog in alkohola ter stres. Posebno poglavje pa je namenjeno skrbi za zdrav način življenja. V empiričnem delu so predstavljeni rezultati raziskave, narejene v vrtcu Rogaška Slatina, enota Izvir. V raziskavo, k...

  13. Spin-lattice relaxation times and knight shift in InSb and InAs

    Braun, P.; Grande, S.

    1976-01-01

    For a dominant contact interaction between nuclei and conduction electrons the relaxation rate is deduced. The extreme cases of degenerate and non-degenerate semiconductors are separately discussed. At strong degeneracy the product of the Knight shift and relaxation time gives the Korringa relation for metals. Measurements of the NMR spin-lattice relaxation times of 115 InSb and 115 InAs were made between 4.2 and 300 K for strongly degenerated samples. The different relaxation mechanisms are discussed and the experimental and theoretical results are compared. (author)

  14. Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis

    Krizek, Filip; Kanne, Thomas; Razmadze, Davydas

    2017-01-01

    . Two methods use conventional wurtzite nanowire arrays as a 6-fold hexagonal basis for growing single crystal wurtzite nanocrosses. A third method uses the 2-fold cubic symmetry of (100) substrates to form well-defined coherent inclusions of zinc blende in the center of the nanocrosses. We show......Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanism...

  15. Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

    Kriegner, Dominik; Panse, Christian; Mandl, Bernhard

    2011-01-01

    The atomic distances in hexagonal polytypes of III−V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende......, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tends to stretch the distances of atomic layers...

  16. High plant uptake of radiocesium from organic soils due to Cs mobility and low soil K content

    Sanchez, A.L.; Wright, S.M.; Naylor, C.; Kennedy, V.H.; Dodd, B.A.; Singleton, D.L.; Barnett, C.L.; Stevens, P.A.

    1999-01-01

    Post-Chernobyl experience has demonstrated that persistently high plant transfer of 137 Cs occurs from organic soils in upland and seminatural ecosystems. The soil properties influencing this transfer have been known for some time but have not been quantified. A pot experiment was conducted using 23 soils collected from selected areas of Great Britain, which were spiked with 134 Cs, and Agrostis capillaris grown for 19--45 days. The plant-to-soil 134 Cs concentration ratio (CR) varied from 0.06 to 44; log CR positively correlated to soil organic matter content (R 2 = 0.84), and CR values were highest for soils with low distribution coefficients (K d ) of 134 Cs. Soils with high organic matter contents and high concentrations of NH 4 + in solution showed high 134 Cs mobility (low K d ). The plant-to-soil solution 134 Cs ratio decreased sharply with increasing soil solution K + . A two parameter linear model, used to predict log CR from soil solution K + and K d , explained 94% of the variability in CR values. In conclusion, the high transfer of 134 Cs in organic soils is related to both the high 134 Cs mobility (low clay content and high NH 4 + concentrations) and low K availability

  17. Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

    Liu, Hung-Chuan; Lai, Yi-Chun; Lai, Chih-Chung; Wu, Bing-Shu; Zan, Hsiao-Wen; Yu, Peichen; Chueh, Yu-Lun; Tsai, Chuang-Chuang

    2015-01-14

    In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.

  18. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-09-05

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  19. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  20. Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

    Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

    2007-01-01

    Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (n s ) and electron mobility (μ n ) in the HfO 2 -passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher I Dmax and an 18% higher g mmax in HEMTs with HfO 2 passivation relative to the unpassivated devices. On the other hand, I gleak of the HEMTs decreases by nearly one order of magnitude when HfO 2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO 2 -passivated HEMTs exhibit a much smaller off-state I D , indicating better turn-off characteristics

  1. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Murali Gedda

    2013-11-01

    Full Text Available Polyvinyl alcohol (PVA and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc wire base field-effect transistors (OFETs. CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  2. Separation of Opiate Isomers Using Electrospray Ionization and Paper Spray Coupled to High-Field Asymmetric Waveform Ion Mobility Spectrometry

    Manicke, Nicholas E.; Belford, Michael

    2015-05-01

    One limitation in the growing field of ambient or direct analysis methods is reduced selectivity caused by the elimination of chromatographic separations prior to mass spectrometric analysis. We explored the use of high-field asymmetric waveform ion mobility spectrometry (FAIMS), an ambient pressure ion mobility technique, to separate the closely related opiate isomers of morphine, hydromorphone, and norcodeine. These isomers cannot be distinguished by tandem mass spectrometry. Separation prior to MS analysis is, therefore, required to distinguish these compounds, which are important in clinical chemistry and toxicology. FAIMS was coupled to a triple quadrupole mass spectrometer, and ionization was performed using either a pneumatically assisted heated electrospray ionization source (H-ESI) or paper spray, a direct analysis method that has been applied to the direct analysis of dried blood spots and other complex samples. We found that FAIMS was capable of separating the three opiate structural isomers using both H-ESI and paper spray as the ionization source.

  3. High inter-tester reliability of the new mobility score in patients with hip fracture

    Kristensen, M.T.; Bandholm, T.; Foss, N.B.

    2008-01-01

    OBJECTIVE: To assess the inter-tester reliability of the New Mobility Score in patients with acute hip fracture. DESIGN: An inter-tester reliability study. SUBJECTS: Forty-eight consecutive patients with acute hip fracture at a median age of 84 (interquartile range, 76-89) years; 40 admitted from...... their own home and 8 from nursing homes to an acute orthopaedic hip fracture unit at a university hospital. METHODS: The New Mobility Score, which evaluates the prefracture functional level with a score from 0 (not able to walk at all) to 9 (fully independent), was assessed by 2 independent physiotherapists...... the prefracture functional level in patients with acute hip fracture Udgivelsesdato: 2008/7...

  4. The importance of incorporating functional habitats into conservation planning for highly mobile species in dynamic systems.

    Webb, Matthew H; Terauds, Aleks; Tulloch, Ayesha; Bell, Phil; Stojanovic, Dejan; Heinsohn, Robert

    2017-10-01

    The distribution of mobile species in dynamic systems can vary greatly over time and space. Estimating their population size and geographic range can be problematic and affect the accuracy of conservation assessments. Scarce data on mobile species and the resources they need can also limit the type of analytical approaches available to derive such estimates. We quantified change in availability and use of key ecological resources required for breeding for a critically endangered nomadic habitat specialist, the Swift Parrot (Lathamus discolor). We compared estimates of occupied habitat derived from dynamic presence-background (i.e., presence-only data) climatic models with estimates derived from dynamic occupancy models that included a direct measure of food availability. We then compared estimates that incorporate fine-resolution spatial data on the availability of key ecological resources (i.e., functional habitats) with more common approaches that focus on broader climatic suitability or vegetation cover (due to the absence of fine-resolution data). The occupancy models produced significantly (P increase or decrease in the area of one functional habitat (foraging or nesting) did not necessarily correspond to an increase or decrease in the other. Thus, an increase in the extent of occupied area may not equate to improved habitat quality or function. We argue these patterns are typical for mobile resource specialists but often go unnoticed because of limited data over relevant spatial and temporal scales and lack of spatial data on the availability of key resources. Understanding changes in the relative availability of functional habitats is crucial to informing conservation planning and accurately assessing extinction risk for mobile resource specialists. © 2017 Society for Conservation Biology.

  5. Teaching through mobile technology : a reflection from high school studies in South Africa

    Jantjies, Mmaki; Joy, Mike

    2017-01-01

    The use of mobile technology to support teaching and learning in schools, has extended technology learning tools in schools across different socio economic divides. There have been various studies throughout the world which reflect the improvement of such technology in schools. In this chapter we reflect on a series of studies conducted in developing countries with focus on Jantjies and Joy (2012,2013,2014,2015) studies. The studies were conducted in schools with the objective of providing te...

  6. Organic phthalocyanine films with high mobilities for efficient field-effect transistor switches

    Schauer, F.; Zhivkov, I.; Nešpůrek, Stanislav

    266-269, 1-3 (2000), s. 999-1003 ISSN 0022-3093. [International Conference on Amorphous and Microcrystalline Semiconductors /18./. Snowbird, 23.08.1999-27.08.1999] R&D Projects: GA MŠk OC 518.10; GA AV ČR KSK2050602 Institutional research plan: CEZ:AV0Z4050913 Keywords : phthalocyanine * charge mobility * field-effect transistor Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.269, year: 2000

  7. Mobile Phone Dependency among High School Students in Rural Area, Central Java

    Ratih Dewi Yudhani

    2016-01-01

    BACKGROUND : Studies have shown that frequent use of mobile phone, either smartphone or non-smartphone, may cause at least 16 inadvertent health-related effects: serious addiction, painful withdrawal, back pro-blems, nerve damage, anxiety and depression, stress, weight problem and fitness level, disrupted sleep, source of bacteria, attention span, social effect, text claw, indirect injuries, eyesight, hearing, and radiation. This study aimed to compare level of dependency between use of smart...

  8. Using mobile phones as acoustic sensors for high-throughput mosquito surveillance.

    Mukundarajan, Haripriya; Hol, Felix Jan Hein; Castillo, Erica Araceli; Newby, Cooper; Prakash, Manu

    2017-10-31

    The direct monitoring of mosquito populations in field settings is a crucial input for shaping appropriate and timely control measures for mosquito-borne diseases. Here, we demonstrate that commercially available mobile phones are a powerful tool for acoustically mapping mosquito species distributions worldwide. We show that even low-cost mobile phones with very basic functionality are capable of sensitively acquiring acoustic data on species-specific mosquito wingbeat sounds, while simultaneously recording the time and location of the human-mosquito encounter. We survey a wide range of medically important mosquito species, to quantitatively demonstrate how acoustic recordings supported by spatio-temporal metadata enable rapid, non-invasive species identification. As proof-of-concept, we carry out field demonstrations where minimally-trained users map local mosquitoes using their personal phones. Thus, we establish a new paradigm for mosquito surveillance that takes advantage of the existing global mobile network infrastructure, to enable continuous and large-scale data acquisition in resource-constrained areas.

  9. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.

    Heo, Cheon; Jang, Jongjin; Lee, Kyngjae; So, Byungchan; Lee, Kyungbae; Ko, Kwangse; Nam, Okhyun

    2017-01-01

    We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm²/V·s and 3.23 × 10¹³ cm⁻², respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.

  10. Improved syntheses of high hole mobility phthalocyanines: A case of steric assistance in the cyclo-oligomerisation of phthalonitriles

    Daniel J. Tate

    2012-01-01

    Full Text Available It has been shown that the base-initiated cyclo-oligomerisation of phthalonitriles is favoured by bulky α-substituents making it possible to obtain the metal-free phthalocyanine directly and in high yield. The phthalocyanine with eight α-isoheptyl substituents gives a high time-of-flight hole mobility of 0.14 cm2·V−1·s−1 within the temperature range of the columnar hexagonal phase, that is 169–189 °C.

  11. Comparison of High-Flexion Fixed-Bearing and High-Flexion Mobile-Bearing Total Knee Arthroplasties-A Prospective Randomized Study.

    Kim, Young-Hoo; Park, Jang-Won; Kim, Jun-Shik

    2018-01-01

    There is none, to our knowledge, about comparison of high-flexion fixed-bearing and high-flexion mobile-bearing total knee arthroplasties (TKAs) in the same patients. The purpose of this study was to determine whether clinical results; radiographic and computed tomographic scan results; and the survival rate of a high-flexion mobile-bearing TKA is better than that of a high-flexion fixed-bearing TKA. The present study consisted of 92 patients (184 knees) who underwent same-day bilateral TKA. Of those, 17 were men and 75 were women. The mean age at the time of index arthroplasty was 61.5 ± 8.3 years (range 52-65 years). The mean body mass index was 26.2 ± 3.3 kg/m 2 (range 23-34 kg/m 2 ). The mean follow-up was 11.2 years (range 10-12 years). The Knee Society knee scores (93 vs 92 points; P = .531) and function scores (80 vs 80 points; P = 1.000), WOMAC scores (14 vs 15 points; P = .972), and UCLA activity scores (6 vs 6 points; P = 1.000) were not different between the 2 groups at 12 years follow-up. There were no differences in any radiographic and CT scan parameters between the 2 groups. Kaplan-Meier survivorship of the TKA component was 98% (95% confidence interval, 93-100) in the high-flexion fixed-bearing TKA group and 99% (95% confidence interval, 94-100) in the high-flexion mobile-bearing TKA group 12 years after the operation. We found no benefit to mobile-bearing TKA in terms of pain, function, radiographic and CT scan results, and survivorship. Longer-term follow-up is necessary to prove the benefit of the high-flexion mobile-bearing TKA over the high-flexion fixed-bearing TKA. Copyright © 2017 Elsevier Inc. All rights reserved.

  12. Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

    Rota, Michele B.

    2017-07-12

    One hour annealing at 300 degrees C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ polytypes is observed at energies that agree with theoretical predictions. These results demonstrate severe constraints on thermal processes to which devices made from InAs WZ NWs can be exposed.

  13. The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

    Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

    2006-01-01

    The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

  14. Cyclotron resonance spectroscopy of a high-mobility two-dimensional electron gas from 0.4 to 100 K at high filling factors

    Curtis, Jeremy A. [Univ. of Alabama, Birmingham, AL (United States); Tokumoto, Takahisa [Univ. of Alabama, Birmingham, AL (United States); Cherian, Judy G. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Kuno, J. [Rice Univ., Houston, TX (United States); Reno, John L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); McGill, Stephen A. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Karaiskaj, Denis [Univ. of South Florida, Tampa, FL (United States); Hilton, David J. [Univ. of Alabama, Birmingham, AL (United States)

    2015-10-01

    We have studied the cyclotron mobility of a Landau-quantized two-dimensional electron gas as a function of temperature (0.4 --100 K) at a fixed magnetic field (1.25 T) using terahertz time-domain spectroscopy in a sample with a low frequency mobility of μdc = 3.6 x 106 cm2 V-1 s-1 and a carrier concentration of ns = 2 x 106 cm-2. The low temperature mobility in this sample results from both impurity scattering and acoustic deformation potential scattering, with μ$-1\\atop{CR}$ ≈ (2.1 x 105 cm2 V-1 s-1)-1 + (3.8 x 10-8 V sK-1 cm-2 x T)-1 at low temperatures. Above 50 K, the cyclotron oscillations show a strong reduction in both the oscillation amplitude and lifetime that is dominated by the contribution due to polar optical phonons. These results suggest that electron dephasing times as long as ~ 300 ps are possible even at this high lling factor (v = 6:6) in higher mobility samples (> 107 cm2 V-1 s-1) that have lower impurity concentrations and where the cyclotron mobility at this carrier concentration would be limited by acoustic deformation potential scattering.

  15. Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature

    Zhishuo Huang

    2016-08-01

    Full Text Available Neither of the two typical two-dimensional materials, graphene and single layer MoS 2 , are good enough for developing semiconductor logical devices. We calculated the electron mobility of 14 two-dimensional semiconductors with composition of MX 2 , where M (=Mo, W, Sn, Hf, Zr and Pt are transition metals, and Xs are S, Se and Te. We approximated the electron phonon scattering matrix by deformation potentials, within which long wave longitudinal acoustical and optical phonon scatterings were included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WS 2 , PtS 2 and PtSe 2 are promising for logical devices regarding the possible high electron mobility and finite band gap. Especially, the phonon limited electron mobility in PtSe 2 reaches about 4000 cm 2 ·V - 1 ·s - 1 at room temperature, which is the highest among the compounds with an indirect bandgap of about 1.25 eV under the local density approximation. Our results can be the first guide for experiments to synthesize better two-dimensional materials for future semiconductor devices.

  16. High level programming for the control of a tele operating mobile robot and with line following

    Bernal U, E.

    2006-01-01

    The TRASMAR automated vehicle was built with the purpose of transporting radioactive materials, it has a similar kinematic structure to that of a tricycle, in where the front wheel is the one in charge of offering the traction and direction, both rear wheels rotate freely and they are subject to a common axle. The electronic design was carried out being based on a MC68HC811 micro controller of the Motorola company. Of the characteristics that the robot possesses it stands out that it counts with an obstacle perception system through three ultrasonic sensors located in the front part of the vehicle to avoid collisions. The robot has two operation modes, the main mode is the manual, manipulated through a control by infrareds, although it can also move in autonomous way by means of the line pursuit technique using two reflective infrared sensors. As any other electronic system, the mobile robot required of improvements and upgrades. The modifications to be carried out were focused to the control stage. Its were intended as elements of upgrade the incorporation of the MC68HC912B32 micro controller and to replace the assembler language characteristic of this type of systems, by a high level language for micro controllers of this type, in this case the FORTH. In a same way it was implemented inside the program the function of the robot's displacement in an autonomous way by means of the line pursuit technique using control with fuzzy logic. The carried out work is distributed in the following way: In the chapter 1 the robot's characteristics are mentioned, as well as the objectives that thought about to the beginning of the project and the justifications that motivated the realization of this upgrade. In the chapters 2 at 5 are presented in a theoretical way the supports used for the the robot's upgrade, as the used modules of the micro controller, those main characteristics of the FORTH language, the theory of the fuzzy logic and the design of the stage of power that

  17. Surface morphology and electronic structure of halogen etched InAs (1 1 1)

    Eassa, N., E-mail: nashwa.eassa@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Betz, R. [Department of Chemistry, Nelson Mandela Metropolitan University (South Africa); Neethling, J.H.; Venter, A.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H{sub 2}O, Br-methanol and I-ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {l_brace}1 1 1{r_brace} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

  18. Surface morphology and electronic structure of halogen etched InAs (1 1 1)

    Eassa, N.; Murape, D.M.; Betz, R.; Neethling, J.H.; Venter, A.; Botha, J.R.

    2012-01-01

    The reaction of halogen-based etchants with n-InAs (1 1 1)A and the resulting surface morphology and surface electronic structure are investigated using field emission scanning electron microscopy and Raman spectroscopy. Using the intensity ratio of the unscreened longitudinal optical (LO) phonon to the transverse optical (TO) phonon in the Raman spectrum, a significant reduction in band bending is deduced after exposure of the InAs surface to HCl:H 2 O, Br–methanol and I–ethanol for moderate times and concentrations. These procedures also lead to smooth and defect-free InAs surfaces. The improvements in surface properties are reversed, however, if the concentrations of the etchants are increased or the etch time is too long. In the worst cases, pit formation and inverted pyramids with {1 1 1} side facets are observed. The influence of the etchant concentration and etch time on the morphological and electronic properties of the etched surfaces is reported.

  19. Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

    Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, J.; Schönenberger, C.; Csonka, S.

    2016-05-01

    Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

  20. Direct Identification of Atomic-Like Electronic Levels in InAs Nano crystal Quantum Dots

    Millo, O.; Katz, D.

    1999-01-01

    The size dependent level structure of InAs nano crystals in the range 2-7 nm in diameter is investigated using both tunneling and optical spectroscopies. The tunneling measurements are performed using a cryogenic scanning tunneling microscope on individual nano crystals that, are attached to a gold substrate via dithiol molecules. The tunneling I-V characteristics manifest an interplay between single electron charging and quantum size effects. We are able to directly identify quantum confined states of isolated InAs nano crystals having s and p symmetries. These states are observed in the I-V curves as two and six-fold single electron charging multiplets. Excellent agreement is found between the strongly allowed optical transitions [1] and the spacing of levels detected in the tunneling experiment. This correlation provides new information on the quantum-dot level structure, from which we conclude that the top-most valence band state has both s and p characteristics. The interplay between level structure singles electron charging of the nano crystals obeys an atomic-like Aufbau sequential electron level occupation