Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

Science.gov (United States)

Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

2015-07-28

High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.

Mobility overestimation due to gated contacts in organic field-effect transistors

Science.gov (United States)

Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

2016-01-01

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

International Nuclear Information System (INIS)

Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

2017-01-01

Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm 2 V −1 s −1 ), which is much higher than that of MoS 2 monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm 2 V −1 s −1 ), which is higher than that of MoS 2 monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm 2 V −1 s −1 , which is much higher than that of MoS 2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

KAUST Repository

Burke, Timothy M.

2013-12-27

Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

KAUST Repository

Burke, Timothy M.; McGehee, Michael D.

2013-01-01

Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

Energy Technology Data Exchange (ETDEWEB)

Du, Juan [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Xia, Congxin, E-mail: xiacongxin@htu.edu.cn [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Liu, Yaming [Henan Institute of Science and Technology, Xinxiang 453003 (China); Li, Xueping [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Peng, Yuting [Department of Physics, University of Texas at Arlington, TX 76019 (United States); Wei, Shuyi [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China)

2017-04-15

Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is much higher than that of MoS{sub 2} monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is higher than that of MoS{sub 2} monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm{sup 2} V{sup −1} s{sup −1}, which is much higher than that of MoS{sub 2} monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

OpenAIRE

Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.

2014-01-01

We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

[Mobile-phone e-mail use, social networks, and loneliness among Japanese high school students].

Science.gov (United States)

Ogata, Yasuko; Izumi, Yukiko; Kitaike, Tadashi

2006-07-01

The purposes of this study were to assess the loneliness of Japanese high school students who own and use a mobile phone, to clarify the relationships between students' loneliness and their social network and frequency of use of e-mail feature, and to demonstrate relationships with a student's social network and recognition of the benefits and drawbacks of mobile phone use. The participants were 227 students from two classes in each grade of a high school in the Kanto region of Japan. Participants answered a questionnaire covering the UCLA Loneliness Scale as well as questions pertaining to the circumstances of use of their mobile phones, their social networks (e.g., number of friends), and their perceptions of the benefits and drawbacks of mobile phone use. The questionnaires of students owning a mobile phone were analyzed. Total scores for the UCLA Loneliness Scale were calculated, and factor analysis was performed for the benefits and drawbacks. A total of 220 questionnaires were returned, for which 94.1 percent of respondents owned a mobile phone. The percentages of male and female respondents were 58% and 42%. Chronbach's alpha for the UCLA Loneliness Scale (total score) was 0.87, a result similar to previous studies with high school and university students. Factor analysis revealed five factors associated with the benefits and drawbacks of mobile phone use. Multiple-regression analysis showed that 42.9% of the variance in "frequency of e-mail use" was explained by grade level, frequency of mobile phone use, and two of the five factors from the benefits and drawbacks ("difficulty of communication," and "possible sleep loss due to nighttime e-mailing"). Stepwise multiple-regression analysis revealed that 24.4% of the variance in UCLA Loneliness Score was explained by gender, the frequency of e-mail use, the number of friends and the presence/absence of a girlfriend or boyfriend. Presence of an active social network and frequent e-mailing by mobile phone reduced

High-frequency hearing loss among mobile phone users.

Science.gov (United States)

Velayutham, P; Govindasamy, Gopala Krishnan; Raman, R; Prepageran, N; Ng, K H

2014-01-01

The objective of this study is to assess high frequency hearing (above 8 kHz) loss among prolonged mobile phone users is a tertiary Referral Center. Prospective single blinded study. This is the first study that used high-frequency audiometry. The wide usage of mobile phone is so profound that we were unable to find enough non-users as a control group. Therefore we compared the non-dominant ear to the dominant ear using audiometric measurements. The study was a blinded study wherein the audiologist did not know which was the dominant ear. A total of 100 subjects were studied. Of the subjects studied 53% were males and 47% females. Mean age was 27. The left ear was dominant in 63%, 22% were dominant in the right ear and 15% did not have a preference. This study showed that there is significant loss in the dominant ear compared to the non-dominant ear (P mobile phone revealed high frequency hearing loss in the dominant ear (mobile phone used) compared to the non dominant ear.

AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

Directory of Open Access Journals (Sweden)

P. C. Chang

2014-01-01

Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

Micromagnetics on high-performance workstation and mobile computational platforms

Science.gov (United States)

Fu, S.; Chang, R.; Couture, S.; Menarini, M.; Escobar, M. A.; Kuteifan, M.; Lubarda, M.; Gabay, D.; Lomakin, V.

2015-05-01

The feasibility of using high-performance desktop and embedded mobile computational platforms is presented, including multi-core Intel central processing unit, Nvidia desktop graphics processing units, and Nvidia Jetson TK1 Platform. FastMag finite element method-based micromagnetic simulator is used as a testbed, showing high efficiency on all the platforms. Optimization aspects of improving the performance of the mobile systems are discussed. The high performance, low cost, low power consumption, and rapid performance increase of the embedded mobile systems make them a promising candidate for micromagnetic simulations. Such architectures can be used as standalone systems or can be built as low-power computing clusters.

High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka; Inagaki, Makoto; Yamaguchi, Masafumi

2012-01-01

We report the highest mobility values above 2000 cm 2 /Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

Data dissemination in the wild: A testbed for high-mobility MANETs

DEFF Research Database (Denmark)

Vingelmann, Peter; Pedersen, Morten Videbæk; Heide, Janus

2012-01-01

This paper investigates the problem of efficient data dissemination in Mobile Ad hoc NETworks (MANETs) with high mobility. A testbed is presented; which provides a high degree of mobility in experiments. The testbed consists of 10 autonomous robots with mobile phones mounted on them. The mobile...... information, and the goal is to convey that information to all devices. A strategy is proposed that uses UDP broadcast transmissions and random linear network coding to facilitate the efficient exchange of information in the network. An application is introduced that implements this strategy on Nokia phones...

Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator

Science.gov (United States)

Shrestha, K.; Chou, M.; Graf, D.; Yang, H. D.; Lorenz, B.; Chu, C. W.

2017-05-01

Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge-carrier concentrations. At low charge-carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge-carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large nonsaturating magnetoresistance and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge-carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge-carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magnetoelectric sensors and memory devices.

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

Science.gov (United States)

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

2017-07-01

High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

Nonmonotonous electron mobility due to structurally induced resonant coupling of subband states in an asymmetric double quantum well

Directory of Open Access Journals (Sweden)

R. K. Nayak

2015-11-01

Full Text Available We show that sharp nonmonotic variation of low temperature electron mobility μ can be achieved in GaAs/AlxGa1-xAs barrier delta-doped double quantum well structure due to quantum mechanical transfer of subband electron wave functions within the wells. We vary the potential profile of the coupled structure as a function of the doping concentration in order to bring the subbands into resonance such that the subband energy levels anticross and the eigen states of the coupled structure equally share both the wells thereby giving rise to a dip in mobility. When the wells are of equal widths, the dip in mobility occurs under symmetric doping of the side barriers. In case of unequal well widths, the resonance can be obtained by suitable asymmetric variation of the doping concentrations. The dip in mobility becomes sharp and also the wavy nature of mobility takes a rectangular shape by increasing the barrier width. We show that the dip in mobility at resonance is governed by the interface roughness scattering through step like changes in the subband mobilities. It is also gratifying to show that the drop in mobility at the onset of occupation of second subband is substantially supressed through the quantum mechanical transfer of subband wave functions between the wells. Our results can be utilized for performance enhancement of coupled quantum well devices.

Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

International Nuclear Information System (INIS)

Arulkumaran, S.; Liu, Z.H.; Ng, G.I.; Cheong, W.C.; Zeng, R.; Bu, J.; Wang, H.; Radhakrishnan, K.; Tan, C.L.

2007-01-01

The influence of temperature (- 50 deg. C to + 200 deg. C) was studied on the DC and microwave characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on high resistivity Si substrate for the first time. The AlGaN/GaN HEMTs exhibited a current-gain cut-off frequency (f T ) of 11.8 GHz and maximum frequency of oscillation (f max ) of 27.5 GHz. When compared to room temperature values, about 4% and 10% increase in f T and f max and 23% and 39.5% decrease in f T and f max were observed when measured at - 50 deg. C and 200 deg. C, respectively. The improvement of I D , g m f T , and f max at - 50 deg. C is due to the enhancement of 2DEG mobility and effective electron velocity. The anomalous drain current reduction in the I-V curves were observed at low voltage region at the temperature ≤ 10 deg. C but disappeared when the temperature reached ≥ 25 deg. C. A positive threshold voltage (V th ) shift was observed from - 50 deg. C to 200 deg. C. The positive shift of V th is due to the occurrence of trapping effects in the devices. The drain leakage current decreases with activation energies of 0.028 eV and 0.068 eV. This decrease of leakage current with the increase of temperature is due to the shallow acceptor initiated impact ionization

Hierarchical micro-mobility management in high-speed multihop access networks

Institute of Scientific and Technical Information of China (English)

TANG Bi-hua; MA Xiao-lei; LIU Yuan-an; GAO Jin-chun

2006-01-01

This article integrates the hierarchical micro-mobility management and the high-speed multihop access networks (HMAN), to accomplish the smooth handover between different access routers. The proposed soft handover scheme in the high-speed HMAN can solve the micro-mobility management problem in the access network. This article also proposes the hybrid access router (AR) advertisement scheme and AR selection algorithm, which uses the time delay and stable route to the AR as the gateway selection parameters. By simulation, the proposed micro-mobility management scheme can achieve high packet delivery fraction and improve the lifetime of network.

Mobile marketing for mobile games

OpenAIRE

Vu, Giang

2016-01-01

Highly developed mobile technology and devices enable the rise of mobile game industry and mobile marketing. Hence mobile marketing for mobile game is an essential key for a mobile game success. Even though there are many articles on marketing for mobile games, there is a need of highly understanding mobile marketing strategies, how to launch a mobile campaign for a mobile game. Besides that, it is essential to understand the relationship between mobile advertising and users behaviours. There...

Environmental stability of high-mobility indium-oxide based transparent electrodes

Directory of Open Access Journals (Sweden)

Thanaporn Tohsophon

2015-11-01

Full Text Available Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In2O3 (ITO, H-doped In2O3 (IO:H, and Zn-doped In2O3 (IZO electrodes under damp heat (DH conditions (85 °C, 85% relative humidity. ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (Rs degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% Rs degradation, due to losses in electron Hall mobility (μHall. We propose that this degradation results from chemisorbed OH- or H2O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μHall strongly degrades during DH, the optical mobility (μoptical remains unchanged, indicating that the degradation mainly occurs at grain boundaries.

Service Level Agreement for the QoS Guaranteed Mobile IPTV Services over Mobile WiMAX Networks

OpenAIRE

Chowdhury, Mostafa Zaman; Trung, Bui Minh; Jang, Yeong Min; Kim, Young-Il; Ryu, Won

2011-01-01

While mobile IPTV services are supported through the mobile WiMAX networks, there must need some guaranteed bandwidth for the IPTV services especially if IPTV and non-IPTV services are simultaneously supported by the mobile WiMAX networks. The quality of an IPTV service definitely depends on the allocated bandwidth for that channel. However, due to the high quality IPTV services and to support of huge non-IPTV traffic over mobile WiMAX networks, it is not possible to guarantee the sufficient ...

High school students’ usage behavior and views about mobile phones

Directory of Open Access Journals (Sweden)

Ahmet Ergin

2014-09-01

Full Text Available Objective: The aim of this study was to determine high school students’ usage behavior and views about mobile phones. Methods:Totally 253 (85.5% students educated at Honaz High School within the academic year 2010-2011, participated to this cross-sectional study and a questionnaire consisting of 42 questions which aimed to determine usage behavior and views about mobile phones was administered to the students. Results:The mean age of the students was 16.1 ± 1.1 years, and 56.9% of them were girl. 79.8% of students have mobile phone and 53.9% of them make daily average of over 30 minutes mobile phone calls. 76.1% of participants stated that they did not use headphones, 78.1% did not turn off their mobile phones when they are sleeping and 67.3% put it right next to them or under the pillow. 83.1% of students think mobile phones are harmful for human health, 56.7% think the base stations are harmful to human health and the environment, 91.3% think mobile phones are harmful for children, pregnant women and elderly people. Conclusion: It is found that students’ mobile phone ownership is widespread, the age of starting to use mobile phone and headphones usage is low, knowledge about the base stations is not adequate.

Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

Directory of Open Access Journals (Sweden)

Xiaoqing Xu

2016-11-01

Full Text Available In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG properties of AlGaN/GaN high electron mobility transistor (HEMT structure grown by metal-organic chemical vapor deposition (MOCVD on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72% across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.

Interface-controlled, high-mobility organic transistors

NARCIS (Netherlands)

Jurchescu, Oana D.; Popinciuc, Mihaita; van Wees, Bart J.; Palstra, Thomas T. M.

2007-01-01

The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the

Human engineering in mobile radwaste systems

International Nuclear Information System (INIS)

Jones, D.; McMahon, J.; Motl, G.

1988-01-01

To a large degree, mobile radwaste systems are replacing installed plant systems at US nuclear plants due to regulatory obsolescence, high capital and maintenance costs, and increased radiation exposure. Well over half the power plants in the United States now use some sort of mobile system similar to those offered by LN Technologies Corporation. Human engineering is reflected in mobile radwaste system design due to concerns about safety, efficiency, and cost. The radwaste services business is so competitive that vendors must reflect human engineering in several areas of equipment design in order to compete. The paper discusses radiation exposure control, contamination control, compact components, maintainability, operation, and transportability

Hierarchical coordination control of mobile robots

NARCIS (Netherlands)

Adinandra, S.

2012-01-01

In the last decade, robotic systems have penetrated human life more than human can imagine. In particular, the multi-mobile robotic systems have faced a fast growing due to the fact that by deploying a large collection of mobile robots the overall system has a high redundancy and offers the

Electron drift time in silicon drift detectors: A technique for high precision measurement of electron drift mobility

International Nuclear Information System (INIS)

Castoldi, A.; Rehak, P.

1995-01-01

This paper presents a precise absolute measurement of the drift velocity and mobility of electrons in high resistivity silicon at room temperature. The electron velocity is obtained from the differential measurement of the drift time of an electron cloud in a silicon drift detector. The main features of the transport scheme of this class of detectors are: the high uniformity of the electron motion, the transport of the signal electrons entirely contained in the high-purity bulk, the low noise timing due to the very small anode capacitance (typical value 100 fF), and the possibility to measure different drift distances, up to the wafer diameter, in the same semiconductor sample. These features make the silicon drift detector an optimal device for high precision measurements of carrier drift properties. The electron drift velocity and mobility in a 10 kΩ cm NTD n-type silicon wafer have been measured as a function of the electric field in the range of possible operation of a typical drift detector (167--633 V/cm). The electron ohmic mobility is found to be 1394 cm 2 /V s. The measurement precision is better than 1%. copyright 1995 American Institute of Physics

Analysis of Brain Tumors Due to the Usage of Mobile Phones

Directory of Open Access Journals (Sweden)

SOOBIA SAEED

2017-07-01

Full Text Available The impact of cellular phone radiation on human health is the subject of current mindfulness and is an outcome of the huge increase in phone usage throughout the world. Phones use electromagnetic radiation in the microwave range. The issue is associated with wireless use for 50 minutes and above. The excessive use of mobile phone may cause brain tumors. Nowadays the most commonly developed brain tumor type is GBM (Glioblastoma in multiform and Malignant Astrocytoma. In this paper, we focus on the causes of brain tumor (cancer due to the cell phone as this increase in glucose metabolism. The aim of the study is to address the aforementioned problems associated with the cell phone. MATLAB programming to detect a brain tumor has been used. We have conducted MRI (Magnetic Resonance Imaging study to get the best images and results.

Analysis of brain tumors due to the usage of mobile phones

International Nuclear Information System (INIS)

Saeed, S.; Noor, S.A.; Shaikh, A.

2017-01-01

The impact of cellular phone radiation on human health is the subject of current mindfulness and is an outcome of the huge increase in phone usage throughout the world. Phones use electromagnetic radiation in the microwave range. The issue is associated with wireless use for 50 minutes and above. The excessive use of mobile phone may cause brain tumors. Nowadays the most commonly developed brain tumor type is GBM (Glioblastoma) in multiform and Malignant Astrocytoma. In this paper, we focus on the causes of brain tumor (cancer) due to the cell phone as this increase in glucose metabolism. The aim of the study is to address the aforementioned problems associated with the cell phone. MATLAB programming to detect a brain tumor has been used. We have conducted MRI (Magnetic Resonance Imaging) study to get the best images and results. (author)

Performance Evaluation of Distributed Mobility Management Protocols: Limitations and Solutions for Future Mobile Networks

Directory of Open Access Journals (Sweden)

J. Carmona-Murillo

2017-01-01

Full Text Available Mobile Internet data traffic has experienced an exponential growth over the last few years due to the rise of demanding multimedia content and the increasing number of mobile devices. Seamless mobility support at the IP level is envisioned as a key architectural requirement in order to deal with the ever-increasing demand for data and to efficiently utilize a plethora of different wireless access networks. Current efforts from both industry and academia aim to evolve the mobility management protocols towards a more distributed operation to tackle shortcomings of fully centralized approaches. However, distributed solutions face several challenges that can result in lower performance which might affect real-time and multimedia applications. In this paper, we conduct an analytical and simulated evaluation of the main centralized and proposed Distributed Mobility Management (DMM solutions. Our results show that, in some scenarios, when users move at high speed and/or when the mobile node is running long-lasting applications, the DMM approaches incur high signaling cost and long handover latency.

Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

International Nuclear Information System (INIS)

Lee, Jongkyong; Gang, Suhyun; Jo, Yongcheol; Kim, Jongmin; Woo, Hyeonseok; Han, Jaeseok; Kim, Hyungsang; Im, Hyunsik

2014-01-01

We have investigated the temperature dependence of ballistic mobility in a 100 nm-long InGaAs/InAlAs metamorphic high-electron-mobility transistor designed for millimeter-wavelength RF applications. To extract the temperature dependence of quasi-ballistic mobility, our experiment involves measurements of the effective mobility in the low-bias linear region of the transistor and of the collision-dominated Hall mobility using a gated Hall bar of the same epitaxial structure. The data measured from the experiment are consistent with that of modeled ballistic mobility based on ballistic transport theory. These results advance the understanding of ballistic transport in various transistors with a nano-scale channel length that is comparable to the carrier's mean free path in the channel.

High pH mobile phase effects on silica-based reversed-phase high-performance liquid chromatographic columns

NARCIS (Netherlands)

Kirkland, J.J.; Straten, van M.A.; Claessens, H.A.

1995-01-01

Aqueous mobile phases above pH 8 often cause premature column failure, limiting the utility of silica-based columns for applications requiring high pH. Previous studies suggest that covalently bound silane ligands are hydrolyzed and removed by high-pH mobile phases. However, we found that the

Ultra high hole mobilities in a pure strained Ge quantum well

International Nuclear Information System (INIS)

Mironov, O.A.; Hassan, A.H.A.; Morris, R.J.H.; Dobbie, A.; Uhlarz, M.; Chrastina, D.; Hague, J.P.; Kiatgamolchai, S.; Beanland, R.; Gabani, S.; Berkutov, I.B.; Helm, M.; Drachenko, O.; Myronov, M.; Leadley, D.R.

2014-01-01

Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were − 14 T < B < + 14 T and 1.5 K < T < 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s was determined for a sheet density (p s ) 9.8 × 10 10 cm −2 (by ME-MSA) and (3.9 ± 0.2) × 10 3 cm 2 /V s for a sheet density (p s ) 5.9 × 10 10 cm −2 (by BAMS). - Highlights: • Pure strained Ge channel grown by reduced pressure chemical vapor deposition • Maximum entropy-mobility spectrum analysis • Bryan's algorithm mobility spectrum analysis • High room temperature hole drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s • Extremely high hole mobility of 1.1 × 10 6 cm 2 /V s at 12 K

High mobility transparent conducting oxides for thin film solar cells

International Nuclear Information System (INIS)

Calnan, S.; Tiwari, A.N.

2010-01-01

A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

High mobility solution-processed hybrid light emitting transistors

International Nuclear Information System (INIS)

Walker, Bright; Kim, Jin Young; Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B.; Chae, Gil Jo; Cho, Shinuk; Seo, Jung Hwa

2014-01-01

We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm 2 /V s, current on/off ratios of >10 7 , and external quantum efficiency of 10 −2 % at 2100 cd/m 2 . These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective

Interaction of a non-histone chromatin protein (high-mobility group protein 2) with DNA

International Nuclear Information System (INIS)

Goodwin, G.H.; Shooter, K.V.; Johns, E.W.

1975-01-01

The interaction with DNA of the calf thymus chromatin non-histone protein termed the high-mobility group protein 2 has been studied by sedimentation analysis in the ultracentrifuge and by measuring the binding of the 125 I-labelled protein to DNA. The results have been compared with those obtained previously by us [Eur. J. Biochem. (1974) 47, 263-270] for the interaction of high-mobility group protein 1 with DNA. Although the binding parameters are similar for these two proteins, high-mobility group protein 2 differs from high-mobility group protein 1 in that the former appears to change the shape of the DNA to a more compact form. The molecular weight of high-mobility group protein 2 has been determined by equilibrium sedimentation and a mean value of 26,000 was obtained. A low level of nuclease activity detected in one preparation of high-mobility group protein 2 has been investigated. (orig.) [de

Developing a Mobility Protocol for Early Mobilization of Patients in a Surgical/Trauma ICU

Directory of Open Access Journals (Sweden)

Meg Zomorodi

2012-01-01

Full Text Available As technology and medications have improved and increased, survival rates are also increasing in intensive care units (ICUs, so it is now important to focus on improving the patient outcomes and recovery. To do this, ICU patients need to be assessed and started on an early mobility program, if stable. While the early mobilization of the ICU patients is not without risk, the current literature has demonstrated that patients can be safely and feasibly mobilized, even while requiring mechanical ventilation. These patients are at a high risk for muscle deconditioning due to limited mobility from numerous monitoring equipment and multiple medical conditions. Frequently, a critically ill patient only receives movement from nurses; such as, being turned side to side, pulled up in bed, or transferred from bed to a stretcher for a test. The implementation of an early mobility protocol that can be used by critical care nurses is important for positive patient outcomes minimizing the functional decline due to an ICU stay. This paper describes a pilot study to evaluate an early mobilization protocol to test the safety and feasibility for mechanically ventilated patients in a surgical trauma ICU in conjunction with the current unit standards.

Highly Mobile Students: Educational Problems and Possible Solutions. ERIC/CUE Digest, Number 73.

Science.gov (United States)

ERIC Clearinghouse on Urban Education, New York, NY.

The following two types of student mobility stand out as causing educational problems: (1) inner-city mobility, which is prompted largely by fluctuations in the job market; and (2) intra-city mobility, which is caused by upward mobility or by poverty and homelessness. Most research indicates that high mobility negatively affects student…

BEYOND THE WORK-LIFE BALANCE: FAMILY AND INTERNATIONAL MOBILITY OF THE HIGHLY SKILLED

Directory of Open Access Journals (Sweden)

Núria Vergés Bosch

2013-10-01

Full Text Available International mobility of the highly skilled has become one of the cornerstones of development in the current knowledge society. Correspondingly, highly skilled personnel are impelled to move abroad in order to improve their competences and build influential professional networks. Mobility implies some advantages involving personal, social and family opportunities when movers experience handicaps in their country of origin. For movers, mobility becomes a new challenge beyond the work-family balance, particularly for women who usually take on the lion’s share of childcare and domestic tasks within the family. The literature exploring the gender dimension in relation to international mobility points to complex outcomes. Firstly, women are taking on a more active role in international mobility processes, even when they have family. Secondly, family and international mobility are interrelated both for men and for women, although family could become a hindrance, particularly for women. Thirdly, international mobility and women’s career development may interfere with family formation or modify traditional family values. Finally, families moving abroad constitute a challenge for public policy, since they present a new area of problems. We aim to analyse the relationship between international mobility and family based on in-depth interviews from a purposive sample of highly skilled personnel in science and technology. The results of our research suggest that international mobility of the highly skilled has effects on the family and vice versa; however, while international mobility and family are compatible, measures and policies to reconcile them are still insufficient.

Mobile high-voltage switchboard. Variable and uncomplicated; Mobile Hochspannungsschaltanlage. Variabel und unkompliziert in der Anwendung

Energy Technology Data Exchange (ETDEWEB)

Albert, Andreas [Siemens AG, Erlangen (Germany). Sector Energy

2009-07-13

The mobile high-voltage switchboard ''REE-Movil 2'' for voltages up to 245 kV provides a complete and nearly autonomous switchboard in a container, a solution that has been available in the medium-voltage sector for some time already. It can be used whenever a quick replacement of a switchboard section or a temporary supplement to a switching substation is needed. The container is mounted on a trailer for maximum flexibility and mobility. (orig.)

High level bacterial contamination of secondary school students' mobile phones.

Science.gov (United States)

Kõljalg, Siiri; Mändar, Rando; Sõber, Tiina; Rööp, Tiiu; Mändar, Reet

2017-06-01

While contamination of mobile phones in the hospital has been found to be common in several studies, little information about bacterial abundance on phones used in the community is available. Our aim was to quantitatively determine the bacterial contamination of secondary school students' mobile phones. Altogether 27 mobile phones were studied. The contact plate method and microbial identification using MALDI-TOF mass spectrometer were used for culture studies. Quantitative PCR reaction for detection of universal 16S rRNA, Enterococcus faecalis 16S rRNA and Escherichia coli allantoin permease were performed, and the presence of tetracycline ( tet A, tet B, tet M), erythromycin ( erm B) and sulphonamide ( sul 1) resistance genes was assessed. We found a high median bacterial count on secondary school students' mobile phones (10.5 CFU/cm 2 ) and a median of 17,032 bacterial 16S rRNA gene copies per phone. Potentially pathogenic microbes ( Staphylococcus aureus , Acinetobacter spp. , Pseudomonas spp., Bacillus cereus and Neisseria flavescens ) were found among dominant microbes more often on phones with higher percentage of E. faecalis in total bacterial 16S rRNA. No differences in contamination level or dominating bacterial species between phone owner's gender and between phone types (touch screen/keypad) were found. No antibiotic resistance genes were detected on mobile phone surfaces. Quantitative study methods revealed high level bacterial contamination of secondary school students' mobile phones.

High mobility ZnO nanowires for terahertz detection applications

International Nuclear Information System (INIS)

Liu, Huiqiang; Peng, Rufang; Chu, Shijin; Chu, Sheng

2014-01-01

An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

Energy Technology Data Exchange (ETDEWEB)

Kaushik, J.K., E-mail: janeshkaushik@sspl.drdo.in [Solid State Physics Laboratory, Delhi 110054 (India); Balakrishnan, V.R.; Mongia, D.; Kumar, U.; Dayal, S. [Solid State Physics Laboratory, Delhi 110054 (India); Panwar, B.S. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Muralidharan, R. [Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

2016-08-01

This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si{sub 3}N{sub 4} passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si{sub 3}N{sub 4}/AlGaN interface in the un-gated regions provides an additional leakage path between the gate and source/drain and may constitute a large component of reverse current. This surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements. A thin interfacial amorphous semiconductor layer formed due to inter diffusion at Si{sub 3}N{sub 4}/AlGaN interface has been presumed as the source for this surface related leakage. We, therefore, conclude that optimum Si{sub 3}N{sub 4} deposition conditions and careful surface preparation prior to passivation can limit the extent of surface leakage and can thus vastly improve the device performance. - Highlights: • Enhanced leakage in AlGaN/GaN High Electron Mobility Transistors after passivation • Experimental evidence of the presence of extrinsic traps at Si{sub 3}N{sub 4}/AlGaN interface • Electron hopping in shallower extended defects and band tail traps at the interface. • Reduction in current collapse due to the virtual gate inhibition by this conduction • However, limitation on the operating voltages due to decrease in breakdown voltage.

Passive Mobile Bandwidth Classification Using Short Lived TCP Connections

OpenAIRE

Michelinakis, Foivos; Kreitz, Gunnar; Petrocco, Riccardo; Zhang, Boxun; Widmer, Joerg

2015-01-01

Consumption of multimedia content is moving from a residential environment to mobile phones. Optimizing Quality of Experience—smooth, quick, and high quality playback—is more difficult in this setting, due to the highly dynamic nature of wireless links. A key requirement for achieving this goal is estimating the available bandwidth of mobile devices. Ideally, this should be done quickly and with low overhead. One challenge is that the majority of connections on mobiles are short-lived TCP con...

High-skilled labour mobility in Europe before and after the 2004 enlargement.

Science.gov (United States)

Petersen, Alexander M; Puliga, Michelangelo

2017-03-01

The extent to which international high-skilled mobility channels are forming is a question of great importance in an increasingly global knowledge-based economy. One factor facilitating the growth of high-skilled labour markets is the standardization of certifiable degrees meriting international recognition. Within this context, we analysed an extensive high-skilled mobility database comprising roughly 382 000 individuals from five broad profession groups (Medical, Education, Technical, Science & Engineering and Business & Legal) over the period 1997-2014, using the 13-country expansion of the European Union (EU) to provide insight into labour market integration. We compare the periods before and after the 2004 enlargement, showing the emergence of a new east-west migration channel between the 13 mostly eastern EU entrants (E) and the rest of the western European countries (W). Indeed, we observe a net directional loss of human capital from E → W, representing 29% of the total mobility after 2004. Nevertheless, the counter-migration from W → E is 7% of the total mobility over the same period, signalling the emergence of brain circulation within the EU. Our analysis of the country-country mobility networks and the country-profession bipartite networks provides timely quantitative evidence for the convergent integration of the EU, and highlights the central role of the UK and Germany as high-skilled labour hubs. We conclude with two data-driven models to explore the structural dynamics of the mobility networks. First, we develop a reconfiguration model to explore the potential ramifications of Brexit and the degree to which redirection of high-skilled labourers away from the UK may impact the integration of the rest of the European mobility network. Second, we use a panel regression model to explain empirical high-skilled mobility rates in terms of various economic 'push-pull' factors, the results of which show that government expenditure on education, per capita

Increased mobility of metal oxide nanoparticles due to photo and thermal induced disagglomeration.

Directory of Open Access Journals (Sweden)

Dongxu Zhou

Full Text Available Significant advances have been made on our understanding of the fate and transport of engineered nanomaterials. One unexplored aspect of nanoparticle aggregation is how environmental stimuli such as light exposure and temperature variations affect the mobility of engineered nanoparticles. In this study, TiO(2, ZnO, and CeO(2 were chosen as model materials for investigating the mobility of nanoparticles under three external stimuli: heat, light and sonication. Sunlight and high power sonication were able to partially disagglomerate metal oxide clusters, but primary particles bonded by solid state necks were left intact. A cycle of temperature increase from 25°C to 65°C and then decrease back was found to disagglomerate the compact clusters in the heating phase and reagglomerate them as more open fractal structures during the cooling phase. A fractal model summing the pair-wise DLVO interactions between primary particles within two fractal agglomerates predicts weak attractions on the order of a few kT. Our study shows that common environmental stimuli such as light exposure or temperature variation can disagglomerate nanoparticle clusters and enhance their mobility in open waters. This phenomenon warrants attention since it is likely that metal oxide nanoparticles will experience these natural stimuli during their transport in the environment.

High mobility and quantum well transistors design and TCAD simulation

CERN Document Server

Hellings, Geert

2013-01-01

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

EEG Changes Due to Experimentally Induced 3G Mobile Phone Radiation.

Science.gov (United States)

Roggeveen, Suzanne; van Os, Jim; Viechtbauer, Wolfgang; Lousberg, Richel

2015-01-01

The aim of this study was to investigate whether a 15-minute placement of a 3G dialing mobile phone causes direct changes in EEG activity compared to the placement of a sham phone. Furthermore, it was investigated whether placement of the mobile phone on the ear or the heart would result in different outcomes. Thirty-one healthy females participated. All subjects were measured twice: on one of the two days the mobile phone was attached to the ear, the other day to the chest. In this single-blind, cross-over design, assessments in the sham phone condition were conducted directly preceding and following the mobile phone exposure. During each assessment, EEG activity and radiofrequency radiation were recorded jointly. Delta, theta, alpha, slowbeta, fastbeta, and gamma activity was computed. The association between radiation exposure and the EEG was tested using multilevel random regression analyses with radiation as predictor of main interest. Significant radiation effects were found for the alpha, slowbeta, fastbeta, and gamma bands. When analyzed separately, ear location of the phone was associated with significant results, while chest placement was not. The results support the notion that EEG alterations are associated with mobile phone usage and that the effect is dependent on site of placement. Further studies are required to demonstrate the physiological relevance of these findings.

Ultimate response time of high electron mobility transistors

International Nuclear Information System (INIS)

Rudin, Sergey; Rupper, Greg; Shur, Michael

2015-01-01

We present theoretical studies of the response time of the two-dimensional gated electron gas to femtosecond pulses. Our hydrodynamic simulations show that the device response to a short pulse or a step-function signal is either smooth or oscillating time-decay at low and high mobility, μ, values, respectively. At small gate voltage swings, U 0  = U g  − U th , where U g is the gate voltage and U th is the threshold voltage, such that μU 0 /L < v s , where L is the channel length and v s is the effective electron saturation velocity, the decay time in the low mobility samples is on the order of L 2 /(μU 0 ), in agreement with the analytical drift model. However, the decay is preceded by a delay time on the order of L/s, where s is the plasma wave velocity. This delay is the ballistic transport signature in collision-dominated devices, which becomes important during very short time periods. In the high mobility devices, the period of the decaying oscillations is on the order of the plasma wave velocity transit time. Our analysis shows that short channel field effect transistors operating in the plasmonic regime can meet the requirements for applications as terahertz detectors, mixers, delay lines, and phase shifters in ultra high-speed wireless communication circuits

Low-cost mobile phone microscopy with a reversed mobile phone camera lens.

Directory of Open Access Journals (Sweden)

Neil A Switz

Full Text Available The increasing capabilities and ubiquity of mobile phones and their associated digital cameras offer the possibility of extending low-cost, portable diagnostic microscopy to underserved and low-resource areas. However, mobile phone microscopes created by adding magnifying optics to the phone's camera module have been unable to make use of the full image sensor due to the specialized design of the embedded camera lens, exacerbating the tradeoff between resolution and field of view inherent to optical systems. This tradeoff is acutely felt for diagnostic applications, where the speed and cost of image-based diagnosis is related to the area of the sample that can be viewed at sufficient resolution. Here we present a simple and low-cost approach to mobile phone microscopy that uses a reversed mobile phone camera lens added to an intact mobile phone to enable high quality imaging over a significantly larger field of view than standard microscopy. We demonstrate use of the reversed lens mobile phone microscope to identify red and white blood cells in blood smears and soil-transmitted helminth eggs in stool samples.

Low-cost mobile phone microscopy with a reversed mobile phone camera lens.

Science.gov (United States)

Switz, Neil A; D'Ambrosio, Michael V; Fletcher, Daniel A

2014-01-01

The increasing capabilities and ubiquity of mobile phones and their associated digital cameras offer the possibility of extending low-cost, portable diagnostic microscopy to underserved and low-resource areas. However, mobile phone microscopes created by adding magnifying optics to the phone's camera module have been unable to make use of the full image sensor due to the specialized design of the embedded camera lens, exacerbating the tradeoff between resolution and field of view inherent to optical systems. This tradeoff is acutely felt for diagnostic applications, where the speed and cost of image-based diagnosis is related to the area of the sample that can be viewed at sufficient resolution. Here we present a simple and low-cost approach to mobile phone microscopy that uses a reversed mobile phone camera lens added to an intact mobile phone to enable high quality imaging over a significantly larger field of view than standard microscopy. We demonstrate use of the reversed lens mobile phone microscope to identify red and white blood cells in blood smears and soil-transmitted helminth eggs in stool samples.

New approach for measuring the microwave Hall mobility of semiconductors

International Nuclear Information System (INIS)

Murthy, D. V. B.; Subramanian, V.; Murthy, V. R. K.

2006-01-01

Measurement of Hall mobility in semiconductor samples using bimodal cavity method gives distinct advantages due to noncontact nature as well as the provision to measure anisotropic mobility. But the measurement approaches followed till now have a disadvantage of having high error values primarily due to the problem in evaluating the calibration constant of the whole experimental arrangement. This article brings out a new approach that removes such disadvantage and presents the calibration constant with 1% accuracy. The overall error in the carrier mobility values is within 5%

Investigation of Doppler Effects on high mobility OFDM-MIMO systems with the support of High Altitude Platforms (HAPs)

Science.gov (United States)

Mohammed, H. A.; Sibley, M. J. N.; Mather, P. J.

2012-05-01

The merging of Orthogonal Frequency Division Multiplexing (OFDM) with Multiple-input multiple-output (MIMO) is a promising mobile air interface solution for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. This paper details the design of a highly robust and efficient OFDM-MIMO system to support permanent accessibility and higher data rates to users moving at high speeds, such as users travelling on trains. It has high relevance for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. The paper begins with a comprehensive literature review focused on both technologies. This is followed by the modelling of the OFDM-MIMO physical layer based on Simulink/Matlab that takes into consideration high vehicular mobility. Then the entire system is simulated and analysed under different encoding and channel estimation algorithms. The use of High Altitude Platform system (HAPs) technology is considered and analysed.

Investigation of Doppler Effects on high mobility OFDM-MIMO systems with the support of High Altitude Platforms (HAPs)

International Nuclear Information System (INIS)

Mohammed, H A; Sibley, M J N; Mather, P J

2012-01-01

The merging of Orthogonal Frequency Division Multiplexing (OFDM) with Multiple-input multiple-output (MIMO) is a promising mobile air interface solution for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. This paper details the design of a highly robust and efficient OFDM-MIMO system to support permanent accessibility and higher data rates to users moving at high speeds, such as users travelling on trains. It has high relevance for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. The paper begins with a comprehensive literature review focused on both technologies. This is followed by the modelling of the OFDM-MIMO physical layer based on Simulink/Matlab that takes into consideration high vehicular mobility. Then the entire system is simulated and analysed under different encoding and channel estimation algorithms. The use of High Altitude Platform system (HAPs) technology is considered and analysed.

Cyclotron resonance spectroscopy of a high-mobility two-dimensional electron gas from 0.4 to 100 K at high filling factors

Energy Technology Data Exchange (ETDEWEB)

Curtis, Jeremy A. [Univ. of Alabama, Birmingham, AL (United States); Tokumoto, Takahisa [Univ. of Alabama, Birmingham, AL (United States); Cherian, Judy G. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Kuno, J. [Rice Univ., Houston, TX (United States); Reno, John L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); McGill, Stephen A. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Karaiskaj, Denis [Univ. of South Florida, Tampa, FL (United States); Hilton, David J. [Univ. of Alabama, Birmingham, AL (United States)

2015-10-01

We have studied the cyclotron mobility of a Landau-quantized two-dimensional electron gas as a function of temperature (0.4 --100 K) at a fixed magnetic field (1.25 T) using terahertz time-domain spectroscopy in a sample with a low frequency mobility of μ_dc = 3.6 x 10⁶ cm² V^-1 s^-1 and a carrier concentration of ns = 2 x 10₆ cm^-2. The low temperature mobility in this sample results from both impurity scattering and acoustic deformation potential scattering, with μ$-1\\atop{CR}$ ≈ (2.1 x 10⁵ cm² V^-1 s^-1)^-1 + (3.8 x 10^-8 V sK^-1 cm^-2 x T)^-1 at low temperatures. Above 50 K, the cyclotron oscillations show a strong reduction in both the oscillation amplitude and lifetime that is dominated by the contribution due to polar optical phonons. These results suggest that electron dephasing times as long as ~ 300 ps are possible even at this high lling factor (v = 6:6) in higher mobility samples (> 10⁷ cm² V^-1 s^-1) that have lower impurity concentrations and where the cyclotron mobility at this carrier concentration would be limited by acoustic deformation potential scattering.

Analysis of the contended health risks due to digitally modulated mobile phone radiation

International Nuclear Information System (INIS)

Liesenkoetter, B.

2002-01-01

In the public discussion regarding the health risks of mobile phone system radiation, it is emphasized that the pulse slope of digital modulation, as defined in the GSM-Standard, will cause biological effects. In contrast, the high field strength of broadcasting and television radiation is not considered to be relevant. This paper compares quantitatively the slope of the digital GSM pulses with that of the synchronizing pulse of the television signal. The result shows clearly that the pulse spectrum of the television signal contains that of the GSM signal; in addition, the synchronizing impulse of television exhibits a much steeper slope. Considering the countrywide normal radiation intensities of television and mobile phone systems, it can be stated that the worldwide exposure to the common television signals over more than 50 years can disprove the contention of adverse biological health effects of the pulse slope of digitally modulated radiofrequency. (orig.) [de

Record high hole mobility in polymer semiconductors via side-chain engineering.

Science.gov (United States)

Kang, Il; Yun, Hui-Jun; Chung, Dae Sung; Kwon, Soon-Ki; Kim, Yun-Hi

2013-10-09

Charge carrier mobility is still the most challenging issue that should be overcome to realize everyday organic electronics in the near future. In this Communication, we show that introducing smart side-chain engineering to polymer semiconductors can facilitate intermolecular electronic communication. Two new polymers, P-29-DPPDBTE and P-29-DPPDTSE, which consist of a highly conductive diketopyrrolopyrrole backbone and an extended branching-position-adjusted side chain, showed unprecedented record high hole mobility of 12 cm(2)/(V·s). From photophysical and structural studies, we found that moving the branching position of the side chain away from the backbone of these polymers resulted in increased intermolecular interactions with extremely short π-π stacking distances, without compromising solubility of the polymers. As a result, high hole mobility could be achieved even in devices fabricated using the polymers at room temperature.

Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields

International Nuclear Information System (INIS)

Palmer, Martin John

2001-01-01

Silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) for high speed, high current applications are rapidly approaching the physical and financial limits of the technology. This opens opportunities for the incorporation of materials with intrinsically better transport characteristics. An alloy of silicon and germanium is one such material that is gaining much recognition as the active component of MOSFETs and as the secondary structures (such as the gate electrode). This work examines a batch of buried channel Si 0.64 Ge 0.36 p-MOSFETs, with a minimum effective length of 0.35 μm, under different bias conditions and at different temperatures. High current and transconductance enhancements are apparent at long gate lengths. The carrier mobility is up to a factor of 2.5 times that of silicon at room temperature and 7.5 times at 4 K. A clear trend of decreasing peak mobility with decreasing silicon cap thickness is evident. Simulations show that scattering caused by the roughness of the SiO 2 /Si interface dominates, rather than alloy scattering or Si/SiGe roughness, even for a buried channel. This scattering increases with the proximity of the carriers to the interface. An increase of interface trap density with decreasing cap thickness, demonstrates that segregated germanium exists some distance into the cap and interferes with the oxidation process. This will increase scattering through increased SiO 2 /Si roughness and increased trapped charge. The short channel, high field results are comparable or slightly worse than those of silicon due to lower saturation drift velocity. However, fitting to a drift-diffusion model shows an apparent increase in saturation velocity for short channels, especially at low temperatures. This effect correlates with the low field mobility and is greater for devices containing SiGe. This is an indication of velocity overshoot, which may enhance the performance of SiGe MOSFETs at deep submicron gate lengths. (author)

In-plane heterostructures of Sb/Bi with high carrier mobility

Science.gov (United States)

Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

2017-06-01

In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

Hall mobility of free charge carriers in highly compensated p-Germanium

International Nuclear Information System (INIS)

Gavrilyuk, V.Yi.; Kirnas, Yi.G.; Balakyin, V.D.

2000-01-01

Hall mobility of free charge carriers in initial detectors Ge (Ga) is studied. It is established that an increase in the compensation factor results in the enlargement of Hall mobility in germanium highly compensated by introduction of Li ions during their drift in an electrical field

High-mobility pyrene-based semiconductor for organic thin-film transistors.

Science.gov (United States)

Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

2013-05-01

Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

Mobile phone use does not discourage adolescent smoking in Japan.

Science.gov (United States)

Osaki, Yoneatsu; Ohida, Takashi; Kanda, Hideyuki; Kaneita, Yoshitaka; Kishimoto, Takuji

2012-01-01

The possibility that smoking prevalence among junior and senior high school students may decrease with increasing mobile phone bill was reported by the mass media in Japan. We conducted a nationwide survey on adolescent smoking and mobile phone use in Japan in order to assess the hypothesis that mobile phone use has replaced smoking. A total of 70 junior high schools (response rate; 71%), and 69 high schools (90%) from all over Japan responded to 2005 survey. Students in the responding schools were asked to fill out an anonymous questionnaire about smoking behavior, mobile phone bill, and pocket money. Questionnaires were collected from 32,615 junior high school students and 48,707 senior high school students. The smoking prevalence of students with high mobile phone bill was more likely to be high, and that of students who used mobile phones costing 10,000 yen and over per month was especially high. When "quitters" were defined as students who had tried smoking but were not smoking at the time of survey, the proportion of quitters decreased as the mobile phone bill increased. The proportion of students who had smoking friends increased with the increase in the mobile phone bill per month. The hypothesis that the decrease in smoking prevalence among Japanese adolescents that has been observed in recent years is due to a mobile phone use can be rejected.

A Study on Tracking and Augmentation in Mobile AR for e-Leisure

Directory of Open Access Journals (Sweden)

Seong-Wook Jang

2018-01-01

Full Text Available Recently, a mobile augmented reality (AR system with AR technology that requires high performance has become popular due to the improved performance of smartphones. In particular, mobile AR that directly interacts with outdoor environments has been in development because of increasing interest in e-leisure due to improvements in living standards. Therefore, this paper aims to study tracking and augmentation in mobile AR for e-leisure. We analyzed the performance of human body tracking application implemented in a mobile system (smartphone using three methods (marker-based, markerless, and sensor-based for the feasibility examination of human body tracking in mobile AR. Furthermore, game information augmentation was examined through the implementation of mobile AR using two methods (marker- and sensor-based.

Natural Environment Illumination: Coherent Interactive Augmented Reality for Mobile and Non-Mobile Devices.

Science.gov (United States)

Rohmer, Kai; Jendersie, Johannes; Grosch, Thorsten

2017-11-01

Augmented Reality offers many applications today, especially on mobile devices. Due to the lack of mobile hardware for illumination measurements, photorealistic rendering with consistent appearance of virtual objects is still an area of active research. In this paper, we present a full two-stage pipeline for environment acquisition and augmentation of live camera images using a mobile device with a depth sensor. We show how to directly work on a recorded 3D point cloud of the real environment containing high dynamic range color values. For unknown and automatically changing camera settings, a color compensation method is introduced. Based on this, we show photorealistic augmentations using variants of differential light simulation techniques. The presented methods are tailored for mobile devices and run at interactive frame rates. However, our methods are scalable to trade performance for quality and can produce quality renderings on desktop hardware.

High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

Science.gov (United States)

Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

2017-04-01

In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2016-01-01

High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

From computational discovery to experimental characterization of a high hole mobility organic crystal.

KAUST Repository

Sokolov, Anatoliy N

2011-08-16

For organic semiconductors to find ubiquitous electronics applications, the development of new materials with high mobility and air stability is critical. Despite the versatility of carbon, exploratory chemical synthesis in the vast chemical space can be hindered by synthetic and characterization difficulties. Here we show that in silico screening of novel derivatives of the dinaphtho[2,3-b:2\\',3\\'-f]thieno[3,2-b]thiophene semiconductor with high hole mobility and air stability can lead to the discovery of a new high-performance semiconductor. On the basis of estimates from the Marcus theory of charge transfer rates, we identified a novel compound expected to demonstrate a theoretic twofold improvement in mobility over the parent molecule. Synthetic and electrical characterization of the compound is reported with single-crystal field-effect transistors, showing a remarkable saturation and linear mobility of 12.3 and 16 cm(2) V(-1) s(-1), respectively. This is one of the very few organic semiconductors with mobility greater than 10 cm(2) V(-1) s(-1) reported to date.

Quantum corrections to conductivity observed at intermediate magnetic fields in a high mobility GaAs/AlGaAs 2-dimensional electron gas

International Nuclear Information System (INIS)

Taboryski, R.; Veje, E.; Lindelof, P.E.

1990-01-01

Magnetoresistance with the field perpendicular to the 2-dimensional electron gas in a high mobility GaAs/AlGaAs heterostructure at low temperatures is studied. At the lowest magnetic field we observe the weak localization. At magnetic fields, where the product of the mobility and the magnetic field is of the order of unity, the quantum correction to conductivity due to the electron-electron interaction is as a source of magnetoresistance. A consistent analysis of experiments in this regime is for the first time performed. In addition to the well known electron-electron term with the expected temperature dependence, we find a new type of temperature independent quantum correction, which varies logarithmically with mobility. (orig.)

Probabilistic Mobility Models for Mobile and Wireless Networks

DEFF Research Database (Denmark)

Song, Lei; Godskesen, Jens Christian

2010-01-01

In this paper we present a probabilistic broadcast calculus for mobile and wireless networks whose connections are unreliable. In our calculus broadcasted messages can be lost with a certain probability, and due to mobility the connection probabilities may change. If a network broadcasts a message...... from a location it will evolve to a network distribution depending on whether nodes at other locations receive the message or not. Mobility of locations is not arbitrary but guarded by a probabilistic mobility function (PMF) and we also define the notion of a weak bisimulation given a PMF...

Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

KAUST Repository

Kanimozhi, Catherine K.

2012-10-10

In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a copolymer with exceptional properties such as extended absorption characteristics (up to ∼1100 nm) and field-effect electron mobility values of >1 cm 2 V -1 s -1. The synthesis of this novel DPP-DPP copolymer in combination with the demonstration of transistors with extremely high electron mobility makes this work an important step toward a new family of DPP-DPP copolymers for application in the general area of organic optoelectronics. © 2012 American Chemical Society.

Mobile learning and high-lighting language education

DEFF Research Database (Denmark)

Vinther, Jane

Mobile learning and high-profiling language education. The number of students learning a second or foreign language and participating in instruction in languages other than English has been in decline for some time. There seems to be such a general tendency across nations albeit for a variety...... of reasons idiosyncratic to the particular national conditions. This paper gives an account of a diversified national project designed to infuse foreign language learning classes in upper secondary schools in Denmark with renewed enthusiasm through systematically experimenting with the new media by taking...... advantage of the social side in their application. The aim has been to make language classes attractive and relevant and to highlight the attractiveness and fun in learning through web 2.0 and mobile units. The overall project was supported by the Danish ministry of education as well as the individual...

A first look at mobile internet use in township communities in South Africa

CSIR Research Space (South Africa)

Phokeer, A

2016-11-01

Full Text Available data to gain insights about mobile data usage patterns and the underlying reasons for user behavior concerning mobile data usage. Due to the limited availability of public free Wi-Fi and despite the relatively high cost of mobile data, we find that a...

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

International Nuclear Information System (INIS)

Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

2004-01-01

NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

Challenges for coexistence of machine to machine and human to human applications in mobile network

DEFF Research Database (Denmark)

Sanyal, R.; Cianca, E.; Prasad, Ramjee

2012-01-01

A key factor for the evolution of the mobile networks towards 4G is to bring to fruition high bandwidth per mobile node. Eventually, due to the advent of a new class of applications, namely, Machine-to-Machine, we foresee new challenges where bandwidth per user is no more the primal driver...... be evolved to address various nuances of the mobile devices used by man and machines. The bigger question is as follows. Is the state-of-the-art mobile network designed optimally to cater both the Human-to-Human and Machine-to-Machine applications? This paper presents the primary challenges....... As an immediate impact of the high penetration of M2M devices, we envisage a surge in the signaling messages for mobility and location management. The cell size will shrivel due to high tele-density resulting in even more signaling messages related to handoff and location updates. The mobile network should...

Mobile Phone Ratiometric Imaging Enables Highly Sensitive Fluorescence Lateral Flow Immunoassays without External Optical Filters.

Science.gov (United States)

Shah, Kamal G; Singh, Vidhi; Kauffman, Peter C; Abe, Koji; Yager, Paul

2018-05-14

Paper-based diagnostic tests based on the lateral flow immunoassay concept promise low-cost, point-of-care detection of infectious diseases, but such assays suffer from poor limits of detection. One factor that contributes to poor analytical performance is a reliance on low-contrast chromophoric optical labels such as gold nanoparticles. Previous attempts to improve the sensitivity of paper-based diagnostics include replacing chromophoric labels with enzymes, fluorophores, or phosphors at the expense of increased fluidic complexity or the need for device readers with costly optoelectronics. Several groups, including our own, have proposed mobile phones as suitable point-of-care readers due to their low cost, ease of use, and ubiquity. However, extant mobile phone fluorescence readers require costly optical filters and were typically validated with only one camera sensor module, which is inappropriate for potential point-of-care use. In response, we propose to couple low-cost ultraviolet light-emitting diodes with long Stokes-shift quantum dots to enable ratiometric mobile phone fluorescence measurements without optical filters. Ratiometric imaging with unmodified smartphone cameras improves the contrast and attenuates the impact of excitation intensity variability by 15×. Practical application was shown with a lateral flow immunoassay for influenza A with nucleoproteins spiked into simulated nasal matrix. Limits of detection of 1.5 and 2.6 fmol were attained on two mobile phones, which are comparable to a gel imager (1.9 fmol), 10× better than imaging gold nanoparticles on a scanner (18 fmol), and >2 orders of magnitude better than gold nanoparticle-labeled assays imaged with mobile phones. Use of the proposed filter-free mobile phone imaging scheme is a first step toward enabling a new generation of highly sensitive, point-of-care fluorescence assays.

Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

International Nuclear Information System (INIS)

Pearson, J.L.

1999-03-01

Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

Comparison of High-Flexion Fixed-Bearing and High-Flexion Mobile-Bearing Total Knee Arthroplasties-A Prospective Randomized Study.

Science.gov (United States)

Kim, Young-Hoo; Park, Jang-Won; Kim, Jun-Shik

2018-01-01

There is none, to our knowledge, about comparison of high-flexion fixed-bearing and high-flexion mobile-bearing total knee arthroplasties (TKAs) in the same patients. The purpose of this study was to determine whether clinical results; radiographic and computed tomographic scan results; and the survival rate of a high-flexion mobile-bearing TKA is better than that of a high-flexion fixed-bearing TKA. The present study consisted of 92 patients (184 knees) who underwent same-day bilateral TKA. Of those, 17 were men and 75 were women. The mean age at the time of index arthroplasty was 61.5 ± 8.3 years (range 52-65 years). The mean body mass index was 26.2 ± 3.3 kg/m 2 (range 23-34 kg/m 2 ). The mean follow-up was 11.2 years (range 10-12 years). The Knee Society knee scores (93 vs 92 points; P = .531) and function scores (80 vs 80 points; P = 1.000), WOMAC scores (14 vs 15 points; P = .972), and UCLA activity scores (6 vs 6 points; P = 1.000) were not different between the 2 groups at 12 years follow-up. There were no differences in any radiographic and CT scan parameters between the 2 groups. Kaplan-Meier survivorship of the TKA component was 98% (95% confidence interval, 93-100) in the high-flexion fixed-bearing TKA group and 99% (95% confidence interval, 94-100) in the high-flexion mobile-bearing TKA group 12 years after the operation. We found no benefit to mobile-bearing TKA in terms of pain, function, radiographic and CT scan results, and survivorship. Longer-term follow-up is necessary to prove the benefit of the high-flexion mobile-bearing TKA over the high-flexion fixed-bearing TKA. Copyright © 2017 Elsevier Inc. All rights reserved.

Mobile communication: Boon or bane? Possible dangers of mobile phone usage

Directory of Open Access Journals (Sweden)

Jitendra Kumar Meena

2017-01-01

Full Text Available The ever-increasing use of radio devices (mobile phones has led to widespread concerns among consumers, operators, and governmental authorities regarding environmental and health risks of their use. Various studies have demonstrated the relationship of radiowave exposure with biological effects in the body ranging from molecular to organ scale damage. However, most of them considerably failed to establish a causal association primarily owing to potential biases and errors in their conduct and analysis. Mobile usage also has both social and environmental impacts which have prompted the public health agencies to enforce certain regulations which however remain controversial due to lack of credible research evidence. In such scenario, it is recommended that mobile exposure should be minimized, especially among vulnerable populations. In addition, unbiased high-quality research is needed so as to bring more clarity to the subject and guide governmental policy and regulations.

Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.

Science.gov (United States)

Liu, Xinke; Ang, Kah-Wee; Yu, Wenjie; He, Jiazhu; Feng, Xuewei; Liu, Qiang; Jiang, He; Dan Tang; Wen, Jiao; Lu, Youming; Liu, Wenjun; Cao, Peijiang; Han, Shun; Wu, Jing; Liu, Wenjun; Wang, Xi; Zhu, Deliang; He, Zhubing

2016-04-22

Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2 high-k gate dielectric using a low temperature CMOS process. The fabricated devices were shown to demonstrate a near ideal subthreshold swing (SS) of ~69 mV/dec and a room temperature hole mobility of exceeding >400 cm(2)/Vs. These figure-of-merits are benchmarked to be the best-of-its-kind, which outperform previously reported BP transistors realized on traditional SiO2 gate dielectric. X-ray photoelectron spectroscopy (XPS) analysis further reveals the evidence of a more chemically stable BP when formed on HfO2 high-k as opposed to SiO2, which gives rise to a better interface quality that accounts for the SS and hole mobility improvement. These results unveil the potential of black phosphorus as an emerging channel material for future nanoelectronic device applications.

One-to-One Mobile Technology in High School Physics Classrooms: Understanding Its Use and Outcome

Science.gov (United States)

Zhai, Xiaoming; Zhang, Meilan; Li, Min

2018-01-01

This study examined ways in which high school students used mobile devices in physics classrooms and after school, and the impact of in-class and after-school mobile technology use on their physics learning performance and interest. We collected data from 803 high school freshmen in China after they had used mobile devices for over five months. A…

Mobile platform security

CERN Document Server

Asokan, N; Dmitrienko, Alexandra

2013-01-01

Recently, mobile security has garnered considerable interest in both the research community and industry due to the popularity of smartphones. The current smartphone platforms are open systems that allow application development, also for malicious parties. To protect the mobile device, its user, and other mobile ecosystem stakeholders such as network operators, application execution is controlled by a platform security architecture. This book explores how such mobile platform security architectures work. We present a generic model for mobile platform security architectures: the model illustrat

Coexistence of enhanced mobile broadband communications and ultra-reliable low-latency communications in mobile front-haul

Science.gov (United States)

Ying, Kai; Kowalski, John M.; Nogami, Toshizo; Yin, Zhanping; Sheng, Jia

2018-01-01

5G systems are supposed to support coexistence of multiple services such as ultra reliable low latency communications (URLLC) and enhanced mobile broadband (eMBB) communications. The target of eMBB communications is to meet the high-throughput requirement while URLLC are used for some high priority services. Due to the sporadic nature and low latency requirement, URLLC transmission may pre-empt the resource of eMBB transmission. Our work is to analyze the URLLC impact on eMBB transmission in mobile front-haul. Then, some solutions are proposed to guarantee the reliability/latency requirements for URLLC services and minimize the impact to eMBB services at the same time.

Mobilities of slow electrons in low- and high-pressure gases and liquids

International Nuclear Information System (INIS)

Christophorou, L.G.

1975-01-01

Mobilities of slow (thermal and epithermal) electrons in low- (less than or approximately 500 Torr) and high- (approximately 500 to approximately 34,111 Torr) pressure gases are discussed and are related to the molecular structure and to the mobilities of thermal electrons in liquid media

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

Science.gov (United States)

Zhang, Panlong; Wang, Haibo; Yan, Donghang

2017-09-01

A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Directory of Open Access Journals (Sweden)

Xinke Liu

2017-09-01

Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

Efficient Mobility Management Signalling in Network Mobility Supported PMIPV6.

Science.gov (United States)

Samuelraj, Ananthi Jebaseeli; Jayapal, Sundararajan

2015-01-01

Proxy Mobile IPV6 (PMIPV6) is a network based mobility management protocol which supports node's mobility without the contribution from the respective mobile node. PMIPV6 is initially designed to support individual node mobility and it should be enhanced to support mobile network movement. NEMO-BSP is an existing protocol to support network mobility (NEMO) in PMIPV6 network. Due to the underlying differences in basic protocols, NEMO-BSP cannot be directly applied to PMIPV6 network. Mobility management signaling and data structures used for individual node's mobility should be modified to support group nodes' mobility management efficiently. Though a lot of research work is in progress to implement mobile network movement in PMIPV6, it is not yet standardized and each suffers with different shortcomings. This research work proposes modifications in NEMO-BSP and PMIPV6 to achieve NEMO support in PMIPV6. It mainly concentrates on optimizing the number and size of mobility signaling exchanged while mobile network or mobile network node changes its access point.

Efficient Mobility Management Signalling in Network Mobility Supported PMIPV6

Directory of Open Access Journals (Sweden)

Ananthi Jebaseeli Samuelraj

2015-01-01

Full Text Available Proxy Mobile IPV6 (PMIPV6 is a network based mobility management protocol which supports node’s mobility without the contribution from the respective mobile node. PMIPV6 is initially designed to support individual node mobility and it should be enhanced to support mobile network movement. NEMO-BSP is an existing protocol to support network mobility (NEMO in PMIPV6 network. Due to the underlying differences in basic protocols, NEMO-BSP cannot be directly applied to PMIPV6 network. Mobility management signaling and data structures used for individual node’s mobility should be modified to support group nodes’ mobility management efficiently. Though a lot of research work is in progress to implement mobile network movement in PMIPV6, it is not yet standardized and each suffers with different shortcomings. This research work proposes modifications in NEMO-BSP and PMIPV6 to achieve NEMO support in PMIPV6. It mainly concentrates on optimizing the number and size of mobility signaling exchanged while mobile network or mobile network node changes its access point.

Comparison of dual mobility cup and other surgical construts used for three hundred and sixty two first time hip revisions due to recurrent dislocations: five year results from Lithuanian arthroplasty register.

Science.gov (United States)

Stucinskas, Justinas; Kalvaitis, Tomas; Smailys, Alfredas; Robertsson, Otto; Tarasevicius, Sarunas

2018-05-01

Recently, there has been increasing interest in the use of dual mobility systems in the treatment of hip instability. The aim of this study was to investigate the re-revision rate of dual mobility cup compared to different surgical concepts when used for first-time hip revisions due to recurrent dislocations. The data were derived from the Lithuanian Arthroplasty Register. For survival analysis, we used both re-revision for all reasons and for dislocations as an end-point. Cox proportional hazards models were used to analyze the influence of various covariates (age, gender, and implant concept). A total of 1388 revisions were recorded from 2011 to 2015, of which 362 were performed due to recurrent dislocation. Of the revisions, 247 were performed using dual mobility cups, while 115 were performed using a variety of other surgical constructs including constrained acetabular cups, conventional cups, femoral head exchanges, stem exchanges or anti-luxation rings. There were 27 re-revisions of which 15 were for additional dislocations. There were only 2% re-revisions due to dislocation with dual mobility vs 9% when using other surgical constructs. Cox regression adjusting for age and gender showed that in the short-term, dual mobility cup had a lower risk of revision due to dislocation as well as for all reasons compared to the other surgical constructs. In revision of total hip arthroplasties for dislocation, significantly lower short-term re-revision rate was observed for patients revised with dual mobility cup.

High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives

KAUST Repository

Nikolka, Mark; Nasrallah, Iyad; Rose, Bradley Daniel; Ravva, Mahesh Kumar; Broch, Katharina; Sadhanala, Aditya; Harkin, David; Charmet, Jerome; Hurhangee, Michael; Brown, Adam; Illig, Steffen; Too, Patrick; Jongman, Jan; McCulloch, Iain; Bredas, Jean-Luc; Sirringhaus, Henning

2016-01-01

Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the stability as well as uniformity to a high level sufficient for demanding industrial applications.

High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives

KAUST Repository

Nikolka, Mark

2016-12-12

Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the stability as well as uniformity to a high level sufficient for demanding industrial applications.

Tracking Human Mobility Using WiFi Signals

DEFF Research Database (Denmark)

Sapiezynski, Piotr; Stopczynski, Arkadiusz; Gatej, Radu

2015-01-01

We study six months of human mobility data, including WiFi and GPS traces recorded with high temporal resolution, and find that time series of WiFi scans contain a strong latent location signal. In fact, due to inherent stability and low entropy of human mobility, it is possible to assign location...... to WiFi access points based on a very small number of GPS samples and then use these access points as location beacons. Using just one GPS observation per day per person allows us to estimate the location of, and subsequently use, WiFi access points to account for 80% of mobility across a population....... These results reveal a great opportunity for using ubiquitous WiFi routers for high-resolution outdoor positioning, but also significant privacy implications of such side-channel location tracking....

Analytical admittance characterization of high mobility channel

Energy Technology Data Exchange (ETDEWEB)

Mammeri, A. M.; Mahi, F. Z., E-mail: fati-zo-mahi2002@yahoo.fr [Institute of Science and Technology, University of Bechar (Algeria); Varani, L. [Institute of Electronics of the South (IES - CNRS UMR 5214), University of Montpellier (France)

2015-03-30

In this contribution, we investigate the small-signal admittance of the high electron mobility transistors field-effect channels under a continuation branching of the current between channel and gate by using an analytical model. The analytical approach takes into account the linearization of the 2D Poisson equation and the drift current along the channel. The analytical equations discuss the frequency dependence of the admittance at source and drain terminals on the geometrical transistor parameters.

Interference to cable television due to mobile usage in the Digital Dividend - Analysis

NARCIS (Netherlands)

Robijns, Jan; Schiphorst, Roelof

2011-01-01

The use of mobile applications in the 800 MHz band, which forms part of the ‘Digital Dividend’, may cause interference to cable TV signals under certain conditions. The new mobile applications (called LTE, Long Term Evolution) use frequency bands also used in cable TV networks. This paper discusses

RoCoMAR: Robots' Controllable Mobility Aided Routing and Relay Architecture for Mobile Sensor Networks

Science.gov (United States)

Van Le, Duc; Oh, Hoon; Yoon, Seokhoon

2013-01-01

In a practical deployment, mobile sensor network (MSN) suffers from a low performance due to high node mobility, time-varying wireless channel properties, and obstacles between communicating nodes. In order to tackle the problem of low network performance and provide a desired end-to-end data transfer quality, in this paper we propose a novel ad hoc routing and relaying architecture, namely RoCoMAR (Robots' Controllable Mobility Aided Routing) that uses robotic nodes' controllable mobility. RoCoMAR repeatedly performs link reinforcement process with the objective of maximizing the network throughput, in which the link with the lowest quality on the path is identified and replaced with high quality links by placing a robotic node as a relay at an optimal position. The robotic node resigns as a relay if the objective is achieved or no more gain can be obtained with a new relay. Once placed as a relay, the robotic node performs adaptive link maintenance by adjusting its position according to the movements of regular nodes. The simulation results show that RoCoMAR outperforms existing ad hoc routing protocols for MSN in terms of network throughput and end-to-end delay. PMID:23881134

RoCoMAR: Robots’ Controllable Mobility Aided Routing and Relay Architecture for Mobile Sensor Networks

Directory of Open Access Journals (Sweden)

Seokhoon Yoon

2013-07-01

Full Text Available In a practical deployment, mobile sensor network (MSN suffers from a low performance due to high node mobility, time-varying wireless channel properties, and obstacles between communicating nodes. In order to tackle the problem of low network performance and provide a desired end-to-end data transfer quality, in this paper we propose a novel ad hoc routing and relaying architecture, namely RoCoMAR (Robots’ Controllable Mobility Aided Routing that uses robotic nodes’ controllable mobility. RoCoMAR repeatedly performs link reinforcement process with the objective of maximizing the network throughput, in which the link with the lowest quality on the path is identified and replaced with high quality links by placing a robotic node as a relay at an optimal position. The robotic node resigns as a relay if the objective is achieved or no more gain can be obtained with a new relay. Once placed as a relay, the robotic node performs adaptive link maintenance by adjusting its position according to the movements of regular nodes. The simulation results show that RoCoMAR outperforms existing ad hoc routing protocols for MSN in terms of network throughput and end-to-end delay.

Fusion of lens-free microscopy and mobile-phone microscopy images for high-color-accuracy and high-resolution pathology imaging

Science.gov (United States)

Zhang, Yibo; Wu, Yichen; Zhang, Yun; Ozcan, Aydogan

2017-03-01

Digital pathology and telepathology require imaging tools with high-throughput, high-resolution and accurate color reproduction. Lens-free on-chip microscopy based on digital in-line holography is a promising technique towards these needs, as it offers a wide field of view (FOV >20 mm2) and high resolution with a compact, low-cost and portable setup. Color imaging has been previously demonstrated by combining reconstructed images at three discrete wavelengths in the red, green and blue parts of the visible spectrum, i.e., the RGB combination method. However, this RGB combination method is subject to color distortions. To improve the color performance of lens-free microscopy for pathology imaging, here we present a wavelet-based color fusion imaging framework, termed "digital color fusion microscopy" (DCFM), which digitally fuses together a grayscale lens-free microscope image taken at a single wavelength and a low-resolution and low-magnification color-calibrated image taken by a lens-based microscope, which can simply be a mobile phone based cost-effective microscope. We show that the imaging results of an H&E stained breast cancer tissue slide with the DCFM technique come very close to a color-calibrated microscope using a 40x objective lens with 0.75 NA. Quantitative comparison showed 2-fold reduction in the mean color distance using the DCFM method compared to the RGB combination method, while also preserving the high-resolution features of the lens-free microscope. Due to the cost-effective and field-portable nature of both lens-free and mobile-phone microscopy techniques, their combination through the DCFM framework could be useful for digital pathology and telepathology applications, in low-resource and point-of-care settings.

Mobile Workforce, Mobile Technology, Mobile Threats

International Nuclear Information System (INIS)

Garcia, J.

2015-01-01

Mobile technologies' introduction into the world of safeguards business processes such as inspection creates tremendous opportunity for novel approaches and could result in a number of improvements to such processes. Mobile applications are certainly the wave of the future. The success of the application ecosystems has shown that users want full fidelity, highly-usable, simple purpose applications with simple installation, quick responses and, of course, access to network resources at all times. But the counterpart to opportunity is risk, and the widespread adoption of mobile technologies requires a deep understanding of the threats and vulnerabilities inherent in mobile technologies. Modern mobile devices can be characterized as small computers. As such, the threats against computing infrastructure apply to mobile devices. Meanwhile, the attributes of mobile technology that make it such an obvious benefit over traditional computing platforms all have elements of risk: pervasive, always-on networking; diverse ecosystems; lack of centralized control; constantly shifting technological foundations; intense competition among competitors in the marketplace; the scale of the installation base (from millions to billions); and many more. This paper will explore the diverse and massive environment of mobile, the number of attackers and vast opportunities for compromise. The paper will explain how mobile devices prove valuable targets to both advanced and persistent attackers as well as less-skilled casual hackers. Organized crime, national intelligence agencies, corporate espionage are all part of the landscape. (author)

Fluorescence, Decay Time, and Structural Change of Laser Dye Cresyl Violet in Solution due to Microwave Irradiation at GSM 900/1800 Mobile Phone Frequencies

Directory of Open Access Journals (Sweden)

Fuat Bayrakceken

2012-01-01

Full Text Available Microwave irradiation at GSM 900/1800 MHz mobile phone frequencies affects the electronic structure of cresyl violet in solution. These changes are important because laser-dye cresyl violet strongly bonds to DNA- and RNA-rich cell compounds in nerve tissues. The irradiation effects on the electronic structure of cresyl violet and its fluorescence data were all obtained experimentally at room temperature. For most laser dyes, this is not a trivial task because laser dye molecules possess a relatively complex structure. They usually consist of an extended system of conjugated double or aromatic π-bonds with attached auxochromic (electron donating groups shifting the absorption band further towards longer wavelength. Because of the intrinsically high degree of conjugation, the vibrational modes of the molecular units couple strongly with each other. We found that the fluorescence quantum yield was increased from to due to intramolecular energy hopping of cresyl violet in solution which is exposed to microwave irradiation at mobile phone frequencies, and the photonic product cannot be used as a laser dye anymore.

Gravel Mobility in a High Sand Content Riverbed

Science.gov (United States)

Haschenburger, J. K.

2017-12-01

In sand-gravel channels, sand may modify gravel transport by changing conditions of entrainment and promoting longer displacements or gravel may inhibit sand transport if concentrated into distinct deposits, which restrict sand supply with consequences for migrating bedform size or form. This study reports on gravel mobility in the lower San Antonio River, Texas, where gravel content in the bed material ranges from about 1% to more than 20%. Sediment transport observations were collected at three U.S. Geological Survey gauging stations by deploying a Helley-Smith sampler with a 0.2 mm mesh bag from which transport rates and mobile grain sizes were determined. The flow rates sampled translate into an annual exceedance expectation from 0.2% to 98%. Gravel transport rates are generally two orders of magnitude smaller than the rates of sand transport. However, the finest gravels are transported at rates on the same order of magnitude as the coarsest sands. At all sites, the 2 and 2.8 mm fractions are transported at the lowest flow rate sampled, suggesting mobility for at least 38% to as much as 98% of the year. Fractions as large as 8 mm are mobilized at flow rates that are expected between 25% and 53% of the year. The largest fractions captured in the sampling (16 to 32 mm) require flows closer to bankfull conditions that occur no more than 0.8% of the year. Results document that some gravel sizes can be frequently transported in low gradient riverbeds with high sand content.

Mobility Performance in Slow- and High-Speed LTE Real Scenarios

DEFF Research Database (Denmark)

Gimenez, Lucas Chavarria; Cascino, Maria Carmela; Stefan, Maria

2016-01-01

Mobility performance and handover data interruption times in real scenarios are studied by means of field measurements in an operational LTE network. Both slow- and high-speed scenarios are analyzed by collecting results from two different areas: Aalborg downtown and the highway which encircles...... in the city center as cells on the same site often cover different non-crossing street canyons. Moreover, no handover failures are experienced in the measurements which confirms robust LTE mobility performance. The average interruption time, which is at least equal to the handover execution time, lays within...... the same city. Measurements reveal that the terminal is configured by the network with different handover parametrization depending on the serving cell, which indicates the use of mobility robustness optimization. Although the network is dominated by three sector sites, no intra-site handovers are observed...

Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

International Nuclear Information System (INIS)

Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

2014-01-01

One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm 2 /V s at a low carrier concentration of 7.9 × 10 +19  cm −3 . This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Energy Technology Data Exchange (ETDEWEB)

Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2016-09-05

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Science.gov (United States)

Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

2016-09-01

The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

Filters for mobile radio from high Tc ceramic superconductors

International Nuclear Information System (INIS)

Peterson, G.E.; Wong, E.; Alford, N.McN.

1990-01-01

Mobile radio frequencies lie between 30 MHz and 1,000 MHz. This frequency range is ideal for ceramic high T c superconductors. We have designed Chebyshev, Butterworth and interdigital filters that can employ high T c superconductors in the form of rods, tubes and helices. In general, the performance of these filters at milliwatt power levels is excellent. We will describe fabrication of the superconductors and filter design

Electrical injuries due to railway high tension cables.

Science.gov (United States)

Reichl, M; Kay, S

1985-08-01

We have noted a large number of young boys being admitted to our Unit with burns due to railway high tension cables. On review of these cases we have noted: most of the burns were due to arcing, there is a high level of ignorance among the population at risk. We propose some ways of preventing these injuries.

Determination of the coherence length in high-mobility semiconductor-coupled Josephson weak links

International Nuclear Information System (INIS)

Kleinsasser, A.W.

1991-01-01

A Nb-InAs-Nb superconductor-semiconductor-superconductor weak link based on a high-mobility homoepitaxial n-InAs film was reported recently [Akazaki, Kawakami, and Nittu J. Appl. Phys. 66, 6121 (1989)]. Measurements of the electron concentration, effective mass, and mobility allowed the coherence length in the normal link to be calculated. The mobility was high enough that the dirty limit was not applicable in the temperature range (∼2--7 K) over which the device critical current was measured. The temperature dependence of the critical current could not be fit by the usual theoretical form, even though an expression for the coherence length was used that should be applicable in both the clean and dirty limits. In this paper is demonstrated an excellent fit to the data, obtained by using the magnitude of the coherence length as a fitting parameter and assuming the dirty limit temperature dependence. This implies a coherence length proportional to T -1/2 but far shorter than that calculated from the known material parameters. It is suggested that a different scaling length may apply in high-mobility devices

RISE OF MOBILITY PROGRAMS IN GERMANY DUE TO GLOBALISATION

Directory of Open Access Journals (Sweden)

Eva Poppe

2010-12-01

Full Text Available Learning has come to the front position of the educational agenda in many countries of the world – the knowledge society, learning society, learning organization and so forth are the common terms now in the 21st century. The terms come into view in countless publications of the European Union and of many other countries in and outside the European Community. The learning society is one of the products of globalisation and knowledge, learning and education are intertwined with global capitalism. Education is considered as a servant to global capitalism, enabling trans-boundary companies to gather more effectively in the knowledge society. Learning has become to a central task in governmental education policy in many countries and it is being treated as investment – adding value to human and social capital, resulting in employability and then in work, which makes an even greater distribution to the economy, rather than being treated as a natural human process that results in the improvement of people as human beings. Profound changes are taking place as a result of globalisation that is affecting the whole of the educational institution. The objective of this contribution is to present Germany on its way to a knowledge society by examining the past and the present situation of Germany concerning mobility and furthermore mobility programs.

High-mobility ultrathin semiconducting films prepared by spin coating

Science.gov (United States)

Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

2004-03-01

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

KAUST Repository

Xu, Guizhou; Hou, Zhipeng; Wang, Yue; Zhang, Xiaoming; Zhang, Hongwei; Liu, Enke; Xi, X; Xu, Feng; Wu, Guangheng; Zhang, Xixiang; Wang, Wenhong

2017-01-01

The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

KAUST Repository

Xu, Guizhou

2017-03-14

The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

Specific absorption rate variation in a brain phantom due to exposure by a 3G mobile phone: problems in dosimetry.

Science.gov (United States)

Behari, J; Nirala, Jay Prakash

2013-12-01

A specific absorption rate (SAR) measurements system has been developed for compliance testing of personal mobile phone in a brain phantom material contained in a Perspex box. The volume of the box has been chosen corresponding to the volume of a small rat and illuminated by a 3G mobile phone frequency (1718.5 MHz), and the emitted radiation directed toward brain phantom .The induced fields in the phantom material are measured. Set up to lift the plane carrying the mobile phone is run by a pulley whose motion is controlled by a stepper motor. The platform is made to move at a pre-determined rate of 2 degrees per min limited up to 20 degrees. The measured data for induced fields in various locations are used to compute corresponding SAR values and inter comparison obtained. These data are also compared with those when the mobile phone is placed horizontally with respect to the position of the animal. The SAR data is also experimentally obtained by measuring a rise in temperature due to this mobile exposures and data compared with those obtained in the previous set. To seek a comparison with the safety criteria same set of measurements are performed in 10 g phantom material contained in a cubical box. These results are higher than those obtained with the knowledge of induced field measurements. It is concluded that SAR values are sensitive to the angular position of the moving platform and are well below the safety criteria prescribed for human exposure. The data are suggestive of having a fresh look to understand the mode of electromagnetic field -bio interaction.

High Speed Mobility Through On-Demand Aviation

Science.gov (United States)

Moore, Mark D.; Goodrich, Ken; Viken, Jeff; Smith, Jeremy; Fredericks, Bill; Trani, Toni; Barraclough, Jonathan; German, Brian; Patterson, Michael

2013-01-01

automobiles. ?? Community Noise: Hub and smaller GA airports are facing increasing noise restrictions, and while commercial airliners have dramatically decreased their community noise footprint over the past 30 years, GA aircraft noise has essentially remained same, and moreover, is located in closer proximity to neighborhoods and businesses. ?? Operating Costs: GA operating costs have risen dramatically due to average fuel costs of over $6 per gallon, which has constrained the market over the past decade and resulted in more than 50% lower sales and 35% less yearly operations. Infusion of autonomy and electric propulsion technologies can accomplish not only a transformation of the GA market, but also provide a technology enablement bridge for both larger aircraft and the emerging civil Unmanned Aerial Systems (UAS) markets. The NASA Advanced General Aviation Transport Experiments (AGATE) project successfully used a similar approach to enable the introduction of primary composite structures and flat panel displays in the 1990s, establishing both the technology and certification standardization to permit quick adoption through partnerships with industry, academia, and the Federal Aviation Administration (FAA). Regional and airliner markets are experiencing constant pressure to achieve decreasing levels of community emissions and noise, while lowering operating costs and improving safety. But to what degree can these new technology frontiers impact aircraft safety, the environment, operations, cost, and performance? Are the benefits transformational enough to fundamentally alter aircraft competiveness and productivity to permit much greater aviation use for high speed and On-Demand Mobility (ODM)? These questions were asked in a Zip aviation system study named after the Zip Car, an emerging car-sharing business model. Zip Aviation investigates the potential to enable new emergent markets for aviation that offer "more flexibility than the existing transportation solutions

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

Science.gov (United States)

Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

2018-02-01

A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

Planung einer Mobile Learning Application für medizinische Lerninhalte [Planning of a mobile learning application for medical contents

Directory of Open Access Journals (Sweden)

Walther, Patrick

2013-11-01

Full Text Available [english] Due to the high popularity of mobile devices barriers for mobile learning are becoming less. Place-and time-independent access to information is part of everyday life. The number of mobile applications is steadily growing. Currently there are more than 500,000 mobile applications, so-called apps, available for the Apple iPhone/iPad which can be downloaded in the Apple iTunes Store. More than ten percent of these apps are mobile learning applications.Before starting development of a mobile app we need to analyze all requirements accurately. This is due to the fact that there is a multiplicity of different operating systems with different functionalities. This paper shows general properties of so-called native, hybrid, and web applications and advantages and disadvantages in development and use of the finished application. In addition, current software, which supports the development of a mobile application is explained.Finally the differences of the various development options are shown based on concrete mobile applications.[german] Aufgrund der hohen Verbreitung mobiler Endgeräte werden die Barrieren für das mobile Lernen immer geringer und orts- und zeitunabhängiger Zugriff auf Informationen ist längst im Alltag angekommen. Die Zahl mobiler Applikation wächst stetig an. So stehen beispielsweise aktuell mehr als 500.000 mobile Applikationen, sogenannte Apps, für das Apple iPhone/iPad, dem Nutzer über den Apple iTunes Store bereit. Hiervon sind mehr als zehn Prozent mobile Lernapplikationen.Vor der eigentlichen Entwicklung einer App muss, u.a. aufgrund der Vielzahl mobiler Betriebssysteme und Funktionen der verschiedenen mobilen Endgeräte, zuvor eine genaue Bedarfsanalyse durchgeführt werden um die passende Entwicklungsvariante zu wählen.In diesem Beitrag werden die verschiedenen Möglichkeiten (nativ, hybrid, web zur Entwicklung einer mobilen Applikation, als auch deren Vor- und Nachteile bei der Entwicklung und Nutzung der

Whirlpool routing for mobility

KAUST Repository

Lee, Jung Woo; Kusy, Branislav; Azim, Tahir; Shihada, Basem; Levis, Philip

2010-01-01

Using simulation, controlled testbeds, and real mobility experiments, we find that using the data plane for topology maintenance is highly effective due to the incremental nature of mobility updates. WARP leverages the fact that converging flows at a destination make the destination have the region of highest traffic. We provide a theoretical basis for WARP's behavior, defining an "update area" in which the topology must adjust when a destination moves. As long as packets arrive at a destination before it moves outside of the update area, WARP can repair the topology using the data plane. Compared to existing protocols, such as DYMO and HYPER, WARP's packet drop rate is up to 90% lower while sending up to 90% fewer packets.

Sows with high milk production had both a high feed intake and high body mobilization

DEFF Research Database (Denmark)

Strathe, A. V.; Bruun, T. S.; Hansen, C. F.

2017-01-01

Selection for increased litter size have generated hyper-prolific sows that nurses large litters, however limited knowledge is available regarding the connection between milk production, feed intake and body mobilization of these modern sows. The aim of the current study was to determine what...... be explained by a relatively higher proportion of their body reserves being mobilized compared with multiparous sows. The ADG of the litter was positively related by ADFI of the sows, litter size and BW loss and increasing the ADFI with 1 kg/day throughout lactation likely increased the ADG of the litter...... characterized sows with high milk production and nursing large litters, differences between sows of different parities and effects of lactational performance on next reproductive cycle. In total 565 sows (parity 1 to 4) were studied from 7 days before farrowing until weaning. On day 2 postpartum litters were...

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

International Nuclear Information System (INIS)

Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

2008-01-01

Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm 2 /V s) and sheet charge density (>3x10 13 cm -2 ), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/□ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

Data Management Infrastructure for the Mobile Web

DEFF Research Database (Denmark)

Jensen, Christian Søndergaard

2009-01-01

The Internet is going mobile, and indications are that the mobile Internet will be "bigger" than the conventional Internet. Due to aspects such as user mobility, much more diverse use situations, and the form factor of mobile devices, context awareness is important on the mobile Internet. Focusin...

Mobile Phone Data from GSM Networks for Traffic Parameter and Urban Spatial Pattern Assessment

NARCIS (Netherlands)

Steenbruggen, J.G.M.; Borzacchiello, M.T.; Nijkamp, P.; Scholten, H.J.

2013-01-01

The use of wireless location technology and mobile phone data appears to offer a broad range of new opportunities for sophisticated applications in traffic management and monitoring, particularly in the field of incident management. Indeed, due to the high market penetration of mobile phones, it

Ultrasensitive detection of Hg2+ using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

International Nuclear Information System (INIS)

Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

2014-01-01

An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg 2+ . The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg 2+ and thymines were combined. The current response of this Hg 2+ ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg 2+ ions on the surface by the highly specific thymine-Hg 2+ -thymine recognition. The dynamic linear range for Hg 2+ detection has been determined in the concentrations from 10 −14 to 10 −8 M and a detection limit below 10 −14 M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg 2+ detection till now.

High-mobility ultrathin semiconducting films prepared by spin coating.

Science.gov (United States)

Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

2004-03-18

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Transparent, high mobility InGaZnO thin films deposited by PLD

International Nuclear Information System (INIS)

Suresh, Arun; Gollakota, Praveen; Wellenius, Patrick; Dhawan, Anuj; Muth, John F.

2008-01-01

Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 10 19 carriers/cm 3 depending on the oxygen partial pressure during deposition. Hall mobilities as high as 16 cm 2 /V s were observed. This is approximately an order of magnitude higher than the mobility of amorphous silicon and indicates that InGaO 3 (ZnO) x with x ≤ 5 may be suitable for transparent, thin film transistor applications. Post-deposition annealing was found to strongly influence the carrier concentration while annealing effects on the electron mobility was less influential

Comparison of fixed-bearing and mobile-bearing total knee arthroplasty after high tibial osteotomy.

Science.gov (United States)

Hernigou, Philippe; Huys, Maxime; Pariat, Jacques; Roubineau, François; Flouzat Lachaniette, Charles Henri; Dubory, Arnaud

2018-02-01

There is no information comparing the results of fixed-bearing total knee replacement and mobile-bearing total knee replacement in the same patients previously treated by high tibial osteotomy. The purpose was therefore to compare fixed-bearing and mobile-bearing total knee replacements in patients treated with previous high tibial osteotomy. We compared the results of 57 patients with osteoarthritis who had received a fixed-bearing prosthesis after high tibial osteotomy with the results of 41 matched patients who had received a rotating platform after high tibial osteotomy. The match was made for length of follow-up period. The mean follow-up was 17 years (range, 15-20 years). The patients were assessed clinically and radiographically. The pre-operative knee scores had no statistically significant differences between the two groups. So was the case with the intra-operative releases, blood loss, thromboembolic complications and infection rates in either group. There was significant improvement in both groups of knees, and no significant difference was observed between the groups (i.e., fixed-bearing and mobile-bearing knees) for the mean Knee Society knee clinical score (95 and 92 points, respectively), or the Knee Society knee functional score (82 and 83 points, respectively) at the latest follow-up. However, the mean post-operative knee motion was higher for the fixed-bearing group (117° versus 110°). In the fixed-bearing group, one knee was revised because of periprosthetic fracture. In the rotating platform mobile-bearing group, one knee was revised because of aseptic loosening of the tibial component. The Kaplan-Meier survivorship for revision at ten years of follow-up was 95.2% for the fixed bearing prosthesis and 91.1% for the rotating platform mobile-bearing prosthesis. Although we did manage to detect significant differences mainly in clinical and radiographic results between the two groups, we found no superiority or inferiority of the mobile

High mobility polymer gated organic field effect transistor using zinc ...

Indian Academy of Sciences (India)

Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film ... At room temperature, these transistors exhibit p-type conductivity with field-effect ... Keywords. Organic semiconductor; field effect transistor; phthalocyanine; high mobility. ... The evaporation rate was kept at ...

A Mobile Asset Tracking System Architecture under Mobile-Stationary Co-Existing WSNs

Science.gov (United States)

Kim, Tae Hyon; Jo, Hyeong Gon; Lee, Jae Shin; Kang, Soon Ju

2012-01-01

The tracking of multiple wireless mobile nodes is not easy with current legacy WSN technologies, due to their inherent technical complexity, especially when heavy traffic and frequent movement of mobile nodes are encountered. To enable mobile asset tracking under these legacy WSN systems, it is necessary to design a specific system architecture that can manage numerous mobile nodes attached to mobile assets. In this paper, we present a practical system architecture including a communication protocol, a three-tier network, and server-side middleware for mobile asset tracking in legacy WSNs consisting of mobile-stationary co-existing infrastructures, and we prove the functionality of this architecture through careful evaluation in a test bed. Evaluation was carried out in a microwave anechoic chamber as well as on a straight road near our office. We evaluated communication mobility performance between mobile and stationary nodes, location-awareness performance, system stability under numerous mobile node conditions, and the successful packet transfer rate according to the speed of the mobile nodes. The results indicate that the proposed architecture is sufficiently robust for application in realistic mobile asset tracking services that require a large number of mobile nodes. PMID:23242277

A Mobile Asset Tracking System Architecture under Mobile-Stationary Co-Existing WSNs

Directory of Open Access Journals (Sweden)

Soon Ju Kang

2012-12-01

Full Text Available The tracking of multiple wireless mobile nodes is not easy with current legacy WSN technologies, due to their inherent technical complexity, especially when heavy traffic and frequent movement of mobile nodes are encountered. To enable mobile asset tracking under these legacy WSN systems, it is necessary to design a specific system architecture that can manage numerous mobile nodes attached to mobile assets. In this paper, we present a practical system architecture including a communication protocol, a three-tier network, and server-side middleware for mobile asset tracking in legacy WSNs consisting of mobile-stationary co-existing infrastructures, and we prove the functionality of this architecture through careful evaluation in a test bed. Evaluation was carried out in a microwave anechoic chamber as well as on a straight road near our office. We evaluated communication mobility performance between mobile and stationary nodes, location-awareness performance, system stability under numerous mobile node conditions, and the successful packet transfer rate according to the speed of the mobile nodes. The results indicate that the proposed architecture is sufficiently robust for application in realistic mobile asset tracking services that require a large number of mobile nodes.

Inferring Human Mobility from Sparse Low Accuracy Mobile Sensing Data

DEFF Research Database (Denmark)

Cuttone, Andrea; Jørgensen, Sune Lehmann; Larsen, Jakob Eg

2014-01-01

Understanding both collective and personal human mobility is a central topic in Computational Social Science. Smartphone sensing data is emerging as a promising source for studying human mobility. However, most literature focuses on high-precision GPS positioning and high-frequency sampling, which...... is not always feasible in a longitudinal study or for everyday applications because location sensing has a high battery cost. In this paper we study the feasibility of inferring human mobility from sparse, low accuracy mobile sensing data. We validate our results using participants' location diaries......, and analyze the inferred geographical networks, the time spent at different places, and the number of unique places over time. Our results suggest that low resolution data allows accurate inference of human mobility patterns....

An effective quality model for evaluating mobile websites

International Nuclear Information System (INIS)

Hassan, W.U.; Nawaz, M.T.; Syed, T.H.; Naseem, A.

2015-01-01

The Evolution in Web development in recent years has caused emergence of new area of mobile computing, Mobile phone has been transformed into high speed processing device capable of doing the processes which were suppose to be run only on computer previously, Modem mobile phones now have capability to process data with greater speed then desktop systems and with the inclusion of 3G and 4G networks, mobile became the prime choice for users to send and receive data from any device. As a result, there is a major increase in mobile website need and development but due to uniqueness of mobile website usage as compared to desktop website, there is a need to focus on quality aspect of mobile website, So, to increase and preserve quality of mobile website, a quality model is required which has to be designed specifically to evaluate mobile website quality, To design a mobile website quality model, a survey based methodology is used to gather the information regarding website unique usage in mobile from different users. On the basis of this information, a mobile website quality model is presented which aims to evaluate the quality of mobile websites. In proposed model, some sub characteristics are designed to evaluate mobile websites in particular. The result is a proposed model aims to evaluate features of website which are important in context of its deployment and its usability in mobile platform. (author)

A southern African origin and cryptic structure in the highly mobile plains zebra

DEFF Research Database (Denmark)

Pedersen, Casper-Emil T; Albrechtsen, Anders; Etter, Paul D.

2018-01-01

insights into the past phylogeography of the species. The results identify a southern African location as the most likely source region from which all extant populations expanded around 370,000 years ago. We show evidence for inclusion of the extinct and phenotypically divergent quagga (Equus quagga quagga......The plains zebra (Equus quagga) is an ecologically important species of the African savannah. It is also one of the most numerous and widely distributed ungulates, and six subspecies have been described based on morphological variation. However, the within-species evolutionary processes have been...... difficult to resolve due to its high mobility and a lack of consensus regarding the population structure. We obtained genome-wide DNA polymorphism data from more than 167,000 loci for 59 plains zebras from across the species range, encompassing all recognized extant subspecies, as well as three mountain...

Study of Mobility Enhancements for RPL in Convergecast Scenarios

Directory of Open Access Journals (Sweden)

Jinpeng Wang

2017-11-01

Full Text Available In recent years, mobility support has become an important requirement in various wireless sensor network (WSN applications. However, due to the strict resource constraints of power, memory, and processing resources in WSNs, routing protocols are mainly designed without considering mobility. Low-Power and Lossy Networks (LLNs are a special type of WSNs that tolerate data loss. The Routing Protocol for Low-Power and Lossy Networks (RPL is a routing protocol for LLNs that adapts IPv6 (Internet Protocol version 6 and runs on top of the IEEE (Institute of Electrical and Electronics Engineers 802.15.4 standard. RPL supports multipoint-to-point traffic and point-to-multipoint traffic. In this paper we propose a mobility enhancement mechanism in order to improve data collection applications in highly mobile scenarios. The enhancement is based on signal strength monitoring and depth updating in order to improve the routing protocol performance in mobile scenarios. This enhancement helps routing protocols to cope better with topology changes and makes proactive decisions on updating next-hop neighbours. We integrated this mechanism into the RPL and compared it with other existing RPL mobility support enhancements. Results obtained through simulation using Cooja show that our work outperforms other existing RPL mobility supports on different performance metrics. Results also prove the efficiency of our proposal in highly mobile scenarios.

Thermal Investigation of Three-Dimensional GaN-on-SiC High Electron Mobility Transistors

Science.gov (United States)

2017-07-01

University of L’Aquila, (2011). 23 Rao, H. & Bosman, G. Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors. Solid...AFRL-RY-WP-TR-2017-0143 THERMAL INVESTIGATION OF THREE- DIMENSIONAL GaN-on-SiC HIGH ELECTRON MOBILITY TRANSISTORS Qing Hao The University of Arizona...clarification memorandum dated 16 Jan 09. This report is available to the general public, including foreign nationals. Copies may be obtained from the

Central Vehicle Dynamics Control of the Robotic Research Platform ROboMObil

OpenAIRE

Bünte, Tilman; Ho, Lok Man; Satzger, Clemens; Brembeck, Jonathan

2014-01-01

The ROboMObil is DLR’s space-robotics driven by-wire electro-mobile research platform for mechatronic actuators, vehicle dynamics control, human machine interfaces, and autonomous driving (DLR = German Aerospace Center). Due to its four highly integrated identical Wheel Robots it exhibits an extraordinary manoeuvrability even allowing for driving sideward or rotating on the spot. Topics related to vehicle dynamics control are addressed in this article.

Theoretical prediction of high carrier mobility in single-walled black phosphorus nanotubes

Science.gov (United States)

Li, Q. F.; Wang, H. F.; Yang, C. H.; Li, Q. Q.; Rao, W. F.

2018-05-01

One-dimensional semiconductors are promising materials for high-performance nanoscale devices. Using the first-principles calculations combined with deformation potential approximation, we study the electronic structures and carrier transport properties of black phosphorus nanotubes (BPNTs). It is found that both armchair and zigzag BPNTs with diameter 13.5-18.5 Å are direct bandgap semiconductors. At a similar diameter, the carrier mobility of zigzag BPNT is one order of magnitude larger than that of armchair BPNT. For armchair BPNTs, the electron mobility is about 90.70-155.33 cm2 V-1 s-1 at room temperature, which is about three times of its hole counterpart. For zigzag BPNTs, the maximum mobility can reach 2.87 ×103 cm2 V-1 s-1. Furthermore, the electronic properties can be effectively tuned by the strain. For zigzag (0,13) nanotube, there is a direct-to-indirect band gap transition at a tensile strain of about 6%. Moreover, the electron mobility is boosted sharply by one order of magnitude by applying the compressive or tensile strain. The electron mobility increases to 14.05 ×103 cm2 V-1 s-1 at a tensile strain of 9%. Our calculations highlight the tunable electronic properties and superior carrier mobility of BPNTs that are promising for interesting applications in future nano-electronic devices.

Self-Management Interventions to Prevent the Secondary Condition of Pain in People with Disability Due to Mobility Limitations

Directory of Open Access Journals (Sweden)

Katherine Froehlich-Grobe

2016-01-01

Full Text Available Introduction This focused review examines the use and effectiveness of self-management strategies in preventing or managing pain, which is among the most common secondary conditions faced by individuals with a mobility disability. Methods This focused review was part of a two-phase comprehensive scoping review. Phase I was a comprehensive scoping review of the literature targeting multiple outcomes of self-management interventions for those with mobility impairment, and Phase II was a focused review of the literature on self-management interventions that target pain as a primary or secondary outcome. Two authors searched CINAHL, PubMed, and PsyclNFO for papers published from January 1988 through August 2014 using specified search terms. Following the scoping review, the authors independently screened and selected the studies and reviewed the eligible studies, and the first author extracted data from the included studies. Results The scoping review yielded 40 studies that addressed pain self-management interventions for those living with mobility impairment. These 40 accumulated papers revealed a heterogeneous evidence base in terms of setting (clinic, community, and online, target populations, intervention duration (3 weeks to 24 months, and mode (health-care providers and lay leaders. Most of the reviewed studies reported that the self-management intervention led to significant reduction of pain over time, suggesting that self-management may be a promising approach for addressing pain experienced by people who live with mobility limitations. Discussion This review also reveals moderate-to-high bias across studies, and findings indicate that future research should enhance the methodological quality to provide stronger evidence about the effectiveness of self-management strategies for reducing pain among those with mobility impairments.

High mobility In{sub 2}O{sub 3}:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

Energy Technology Data Exchange (ETDEWEB)

Macco, B.; Wu, Y.; Vanhemel, D. [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Kessels, W.M.M. [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Solliance Solar Research, Eindhoven (Netherlands)

2014-12-01

The preparation of high-quality In{sub 2}O{sub 3}:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In{sub 2}O{sub 3}:H films were deposited by atomic layer deposition at 100 C, after which they underwent solid phase crystallization by a short anneal at 200 C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm{sup 2}/V s at a device-relevant carrier density of 1.8 x 10{sup 20} cm{sup -3}. Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures

International Nuclear Information System (INIS)

Fedoryshyn, Yuriy; Ostinelli, Olivier; Alt, Andreas; Pallin, Angel; Bolognesi, Colombo R.

2014-01-01

The optimization of heavily strained Ga 0.25 In 0.75 As/Al 0.48 In 0.52 As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm 2 /Vs and 70 000 cm 2 /Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10 12  cm −2 throughout the entire study

Modeling the manipulator and flipper pose effects on tip over stability of a tracked mobile manipulator

CSIR Research Space (South Africa)

Dube, C

2011-11-01

Full Text Available Mobile manipulators are used in a number of different applications such as bomb disposal, mining robotics, and search and rescue operations. These mobile manipulators are highly susceptible to tip over due to the motion of the manipulator...

Efficient Signature Based Malware Detection on Mobile Devices

Directory of Open Access Journals (Sweden)

Deepak Venugopal

2008-01-01

Full Text Available The threat of malware on mobile devices is gaining attention recently. It is important to provide security solutions to these devices before these threats cause widespread damage. However, mobile devices have severe resource constraints in terms of memory and power. Hence, even though there are well developed techniques for malware detection on the PC domain, it requires considerable effort to adapt these techniques for mobile devices. In this paper, we outline the considerations for malware detection on mobile devices and propose a signature based malware detection method. Specifically, we detail a signature matching algorithm that is well suited for use in mobile device scanning due to its low memory requirements. Additionally, the matching algorithm is shown to have high scanning speed which makes it unobtrusive to users. Our evaluation and comparison study with the well known Clam-AV scanner shows that our solution consumes less than 50% of the memory used by Clam-AV while maintaining a fast scanning rate.

How Does School Mobility Impact Indicators of Academic Achievement for Highly Mobile Students?

Science.gov (United States)

Tanner-McBrien, Laura

2010-01-01

Children who are homeless or in foster care change schools more often than their non-mobile peers. The impact of school mobility increases their risk of academic failure (Evans, 1996; Ingersoll, Scamman, & Eckerling, 1989; Mao, 1997, Mehana & Reynolds, 2003; Reynolds & Wolf, 1999). Laws enforcing the right of students to remain in…

Task Phase Recognition for Highly Mobile Workers in Large Building Complexes

DEFF Research Database (Denmark)

Stisen, Allan; Mathisen, Andreas; Krogh, Søren

2016-01-01

requirements on the accuracy of the indoor positioning, and thus come with low deployment and maintenance effort in real-world settings. We evaluated the proposed methods in a large hospital complex, where the highly mobile workers were recruited among the non-clinical workforce. The evaluation is based......-scale indoor work environments, namely from a WiFi infrastructure providing coarse grained indoor positioning, from inertial sensors in the workers’ mobile phones, and from a task management system yielding information about the scheduled tasks’ start and end locations. The methods presented have low...... on manually labelled real-world data collected over 4 days of regular work life of the mobile workforce. The collected data yields 83 tasks in total involving 8 different orderlies from a major university hospital with a building area of 160, 000 m2. The results show that the proposed methods can distinguish...

High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

International Nuclear Information System (INIS)

Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

2010-01-01

We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

Japanese high school students' usage of mobile phones while cycling.

Science.gov (United States)

Ichikawa, Masao; Nakahara, Shinji

2008-03-01

To investigate the perception and actual use of mobile phones among Japanese high school students while riding their bicycles, and their experience of bicycle crash/near-crash. A questionnaire survey was carried out at high schools that were, at the time of the survey, commissioned by the National Agency for the Advancement of Sports and Health to conduct school safety research. In the survey, we found that mobile phone use while riding a bicycle was quite common among the students during their commute, but those who have a higher perception of danger in this practice, and those who perceived that this practice is prohibited, were less likely to engage in this practice. Male students and students commuting to school by bicycle only were more likely to have used phones while riding. There was a significant relationship between phone usage while riding a bicycle and the experience of bicycle crash/near-crash, although its causality was not established. Bicycle crash/near-crash experienced while using a phone was less prevalent among the students who had a higher perception of danger in phone usage while riding, students who perceived that this practice is prohibited, and students with a shorter travel time by bicycle during the commute. Since mobile phone use while riding a bicycle potentially increases crash risk among cyclists, student bicycle commuters should be made aware of this risk. Moreover, they should be informed that cyclists' phone usage while riding is prohibited according to the road traffic law.

Proposal for the 4th Workshop on Mobile Gaming, Mobile Life – Interweaving the Virtual and the Real

OpenAIRE

Grüter , Barbara; Mügge , Holger; Oppermann , Leif; Billinghurst , Mark

2012-01-01

Part 18: Mobile Gaming, Mobile Life - Interweaving the Virtual and the Real; International audience; Over the last few years we have witnessed the smartphone dominating the market, the rapid growth of mobile apps, a surge in mobile augmented reality and location-based apps, and burgeoning mobile communities. While mobile topics continue to provide rich research challenges, people and companies outside academia already use these apps regularly. This is due to the increased availability of affo...

INFORMATION SECURITY IN MOBILE MODULAR MEASURING SYSTEMS

Directory of Open Access Journals (Sweden)

A. N. Tkhishev

2017-01-01

Full Text Available A special aspect of aircraft test is carrying out both flight evaluation and ground operation evaluation in a structure of flying aids and special tools equipment. The specific of flight and sea tests involve metering in offshore zone, which excludes the possibility of fixed geodetically related measuring tools. In this regard, the specific role is acquired by shipbased measurement systems, in particular the mobile modular measuring systems. Information processed in the mobile modular measurement systems is a critical resource having a high level of confidentiality. When carrying out their functions, it should be implemented a proper information control of the mobile modular measurement systems to ensure their protection from the risk of data leakage, modification or loss, i.e. to ensure a certain level of information security. Due to the specific of their application it is difficult to solve the problems of information security in such complexes. The intruder model, the threat model, the security requirements generated for fixed informatization objects are not applicable to mobile systems. It was concluded that the advanced mobile modular measuring systems designed for flight experiments monitoring and control should be created due to necessary information protection measures and means. The article contains a diagram of security requirements formation, starting with the data envelopment analysis and ending with the practical implementation. The information security probabilistic model applied to mobile modular measurement systems is developed. The list of current security threats based on the environment and specific of the mobile measurement system functioning is examined. The probabilistic model of the information security evaluation is given. The problems of vulnerabilities transformation of designed information system into the security targets with the subsequent formation of the functional and trust requirements list are examined.

Cloud computing for enhanced mobile health applications

CSIR Research Space (South Africa)

Nkosi, MT

2010-11-01

Full Text Available Mobile devices are being considered as service platforms for mobile health information delivery, access and communication. However mobiles face challenges with regard to delivering secure multimedia based health services due to limitations...

The design of a linear L-band high power amplifier for mobile communication satellites

Science.gov (United States)

Whittaker, N.; Brassard, G.; Li, E.; Goux, P.

1990-01-01

A linear L-band solid state high power amplifier designed for the space segment of the Mobile Satellite (MSAT) mobile communication system is described. The amplifier is capable of producing 35 watts of RF power with multitone signal at an efficiency of 25 percent and with intermodulation products better than 16 dB below carrier.

Thermally Dried Ink-Jet Process for 6,13-Bis(triisopropylsilylethynyl)-Pentacene for High Mobility and High Uniformity on a Large Area Substrate

Science.gov (United States)

Ryu, Gi Seong; Lee, Myung Won; Jeong, Seung Hyeon; Song, Chung Kun

2012-05-01

In this study we developed a simple ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene), which is known as a high-mobility soluble organic semiconductor, to achieve relatively high-mobility and high-uniformity performance for large-area applications. We analyzed the behavior of fluorescent particles in droplets and applied the results to determining a method of controlling the behavior of TIPS-pentacene molecules. The grain morphology of TIPS-pentacene varied depending on the temperature applied to the droplets during drying. We were able to obtain large and uniform grains at 46 °C without any “coffee stain”. The process was applied to a large-size organic thin-film transistor (OTFT) backplane for an electrophoretic display panel containing 192×150 pixels on a 6-in.-sized substrate. The average of mobilities of 36 OTFTs, which were taken from different locations of the backplane, was 0.44±0.08 cm2·V-1·s-1, with a small deviation of 20%, over a 6-in.-size area comprising 28,800 OTFTs. This process providing high mobility and high uniformity can be achieved by simply maintaining the whole area of the substrate at a specific temperature (46 °C in this case) during drying of the droplets.

Thermally dried ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene for high mobility and high uniformity on a large area substrate

Science.gov (United States)

Ryu, Gi Seong; Lee, Myung Won; Jeong, Seung Hyeon; Song, Chung Kun

2012-01-01

In this study we developed a simple ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene), which is known as a high-mobility soluble organic semiconductor, to achieve relatively high-mobility and high-uniformity performance for large-area applications. We analyzed the behavior of fluorescent particles in droplets and applied the results to determining a method of controlling the behavior of TIPS-pentacene molecules. The grain morphology of TIPS-pentacene varied depending on the temperature applied to the droplets during drying. We were able to obtain large and uniform grains at 46 degrees C without any "coffee stain". The process was applied to a large-size organic thin-film transistor (OTFT) backplane for an electrophoretic display panel containing 192 x 150 pixels on a 6-in.-sized substrate. The average of mobilities of 36 OTFTs, which were taken from different locations of the backplane, was 0.44 +/- 0.08 cm2.V-1.s-1, with a small deviation of 20%, over a 6-in.-size area comprising 28,800 OTFTs. This process providing high mobility and high uniformity can be achieved by simply maintaining the whole area of the substrate at a specific temperature (46 degrees C in this case) during drying of the droplets.

Mobilities

DEFF Research Database (Denmark)

to social networks, personal identities, and our relationship to the built environment. The omnipresence of mobilities within everyday life, high politics, technology, and tourism (to mention but a few) all point to a key insight harnessed by the ‘mobilities turn’. Namely that mobilities is much more than......The world is on the move. This is a widespread understanding by many inhabitants of contemporary society across the Globe. But what does it actually mean? During over one decade the ‘mobilities turn’ within the social sciences have provided a new set of insights into the repercussions of mobilities...... and environmental degradation. The spaces and territories marked by mobilities as well as the sites marked by the bypassing of such are explored. Moreover, the architectural and technological dimensions to infrastructures and sites of mobilities will be included as well as the issues of power, social exclusion...

Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

International Nuclear Information System (INIS)

Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

2010-01-01

A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

"It's a Way of Life for Us": High Mobility and High Achievement in Department of Defense Schools.

Science.gov (United States)

Smrekar, Claire E.; Owens, Debra E.

2003-01-01

Examines the academic performance of students in U.S. Department of Defense Education Activity (DoDEA) schools, which have high student mobility. Some observers contend that these students' high achievement is a function of their middle class family and community characteristics. Asserts that DoDEA schools simultaneously "do the right…

Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

NARCIS (Netherlands)

Macco, B.; Knoops, H.C.M.; Verheijen, M.A.; Beyer, W.; Creatore, M.; Kessels, W.M.M.

2017-01-01

In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional

Hold the Phone! High School Students' Perceptions of Mobile Phone Integration in the Classroom

Science.gov (United States)

Thomas, Kevin; Muñoz, Marco A.

2016-01-01

This study examined the survey responses of 628 high school students in a large urban school district to determine their perceptions of mobile phone use in the classroom. Findings indicated that the majority of students (90.7%) were using a variety of mobile phone features for school-related work. Student support for instructional uses of phones,…

GENERATION OF HIGH RESOLUTION AND HIGH PRECISION ORTHORECTIFIED ROAD IMAGERY FROM MOBILE MAPPING SYSTEM

Directory of Open Access Journals (Sweden)

M. Sakamoto

2012-07-01

Full Text Available In this paper, a novel technique to generate a high resolution and high precision Orthorectified Road Imagery (ORI by using spatial information acquired from a Mobile Mapping System (MMS is introduced. The MMS was equipped with multiple sensors such as GPS, IMU, odometer, 2-6 digital cameras and 2-4 laser scanners. In this study, a Triangulated Irregular Network (TIN based approach, similar to general aerial photogrammetry, was adopted to build a terrain model in order to generate ORI with high resolution and high geometric precision. Compared to aerial photogrammetry, there are several issues that are needed to be addressed. ORI is generated by merging multiple time sequence images of a short section. Hence, the influence of occlusion due to stationary objects, such as telephone poles, trees, footbridges, or moving objects, such as vehicles, pedestrians are very significant. Moreover, influences of light falloff at the edges of cameras, tone adjustment among images captured from different cameras or a round trip data acquisition of the same path, and time lag between image exposure and laser point acquisition also need to be addressed properly. The proposed method was applied to generate ORI with 1 cm resolution, from the actual MMS data sets. The ORI generated by the proposed technique was more clear, occlusion free and with higher resolution compared to the conventional orthorectified coloured point cloud imagery. Moreover, the visual interpretation of road features from the ORI was much easier. In addition, the experimental results also validated the effectiveness of proposed radiometric corrections. In occluded regions, the ORI was compensated by using other images captured from different angles. The validity of the image masking process, in the occluded regions, was also ascertained.

Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors

International Nuclear Information System (INIS)

Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Gwarek, W.

2008-01-01

Detection of 100 GHz electromagnetic radiation by a GaAs/AlGaAs high electron mobility field-effect transistor was investigated at 300 K as a function of the angle α between the direction of linear polarization of the radiation and the symmetry axis of the transistor. The angular dependence of the detected signal was found to be A 0 cos 2 (α-α 0 )+C with A 0 , α 0 , and C dependent on the electrical polarization of the transistor gate. This dependence is interpreted as due to excitation of two crossed phase-shifted oscillators. A response of the transistor chip (including bonding wires and the substrate) to 100 GHz radiation was numerically simulated. Results of calculations confirmed experimentally observed dependencies and showed that the two oscillators result from an interplay of 100 GHz currents defined by the transistor impedance together with bonding wires and substrate related modes

Client Mobile Software Design Principles for Mobile Learning Systems

Directory of Open Access Journals (Sweden)

Qing Tan

2009-01-01

Full Text Available In a client-server mobile learning system, client mobile software must run on the mobile phone to acquire, package, and send student’s interaction data via the mobile communications network to the connected mobile application server. The server will receive and process the client data in order to offer appropriate content and learning activities. To develop the mobile learning systems there are a number of very important issues that must be addressed. Mobile phones have scarce computing resources. They consist of heterogeneous devices and use various mobile operating systems, they have limitations with their user/device interaction capabilities, high data communications cost, and must provide for device mobility and portability. In this paper we propose five principles for designing Client mobile learning software. A location-based adaptive mobile learning system is presented as a proof of concept to demonstrate the applicability of these design principles.

SO-limited mobility in a germanium inversion channel with non-ideal metal gate

International Nuclear Information System (INIS)

Shah, Raheel; De Souza, M.M.

2008-01-01

Germanium is an attractive candidate for ultra fast CMOS technology due to its potential for doubling electron mobility and quadrupling hole mobility in comparison to silicon. To maintain the requirements of the International Technology Roadmap for Semiconductors (ITRS), high-κ insulators and metal gates will be required in conjunction with Ge technology. Key issues which will have to be addressed in achieving Ge technology are: trap free insulators, assessment of appropriate crystallographic orientations and the selection of gate metals for the best mobility. In this work mobilities are evaluated for Ge-nMOSFET with two metal gates (Al and TiN) and high-κ (HfO 2 ) insulator. Scattering with bulk phonons, surface roughness and high-κ phonons are taken into account. It is predicted that Al as the gate material on Ge {100} substrate performs 50% better than Ge {111} orientation at a sheet concentration of 1 x 10 13 cm -2 . Surface roughness is likely to be the most damaging mobility degradation mechanism at high fields for Ge {111}

Influence of physical properties of soil on 137 Cs mobility

International Nuclear Information System (INIS)

Kanapickas, A.; Paulaitiene, I.; Mazeika, J.; Bauziene, I.

2005-01-01

A model to account for the mobility of radiocesium in soil is presented. The model requires a minimal set of coefficients that describe radiocesium migration and fixation rates, which can be related to physical soil properties. The peculiarities of experimental radiocesium profiles in soil are explained by the composition of soil, which affects the radiocesium fixation rate. It is shown that the migration of radiocesium in soil is governed by vertical convection of a mobile form, whereas diffusion is a slower process due to strong fixation. The results show that the velocity of vertical migration downward of mobile radiocesium can be set constant, because the overall migration rate depends on fixation. Modeling of experimental radiocesium soil profiles suggests that organic (humic) layers with reduced mineral content and humidity have a high radiocesium fixation rate. Soil structure that maintains high soil humidity and mineral content has an increased cesium exchangeability and. consequently, higher radiocesium mobility. (author)

Mobility of organic carbon from incineration residues

International Nuclear Information System (INIS)

Ecke, Holger; Svensson, Malin

2008-01-01

Dissolved organic carbon (DOC) may affect the transport of pollutants from incineration residues when landfilled or used in geotechnical construction. The leaching of dissolved organic carbon (DOC) from municipal solid waste incineration (MSWI) bottom ash and air pollution control residue (APC) from the incineration of waste wood was investigated. Factors affecting the mobility of DOC were studied in a reduced 2 6-1 experimental design. Controlled factors were treatment with ultrasonic radiation, full carbonation (addition of CO 2 until the pH was stable for 2.5 h), liquid-to-solid (L/S) ratio, pH, leaching temperature and time. Full carbonation, pH and the L/S ratio were the main factors controlling the mobility of DOC in the bottom ash. Approximately 60 weight-% of the total organic carbon (TOC) in the bottom ash was available for leaching in aqueous solutions. The L/S ratio and pH mainly controlled the mobilization of DOC from the APC residue. About 93 weight-% of TOC in the APC residue was, however, not mobilized at all, which might be due to a high content of elemental carbon. Using the European standard EN 13 137 for determination of total organic carbon (TOC) in MSWI residues is inappropriate. The results might be biased due to elemental carbon. It is recommended to develop a TOC method distinguishing between organic and elemental carbon

Mobile IP: state of the art report

NARCIS (Netherlands)

Karagiannis, Georgios; Heijenk, Geert

Due to roaming, a mobile device may change its network attachment each time it moves to a new link. This might cause a disruption for the Internet data packets that have to reach the mobile node. Mobile IP is a protocol, developed by the Mobile IP Internet Engineering Task Force (IETF) working

Understanding the Representativeness of Mobile Phone Location Data in Characterizing Human Mobility Indicators

Directory of Open Access Journals (Sweden)

Shiwei Lu

2017-01-01

Full Text Available The advent of big data has aided understanding of the driving forces of human mobility, which is beneficial for many fields, such as mobility prediction, urban planning, and traffic management. However, the data sources used in many studies, such as mobile phone location and geo-tagged social media data, are sparsely sampled in the temporal scale. An individual’s records can be distributed over a few hours a day, or a week, or over just a few hours a month. Thus, the representativeness of sparse mobile phone location data in characterizing human mobility requires analysis before using data to derive human mobility patterns. This paper investigates this important issue through an approach that uses subscriber mobile phone location data collected by a major carrier in Shenzhen, China. A dataset of over 5 million mobile phone subscribers that covers 24 h a day is used as a benchmark to test the representativeness of mobile phone location data on human mobility indicators, such as total travel distance, movement entropy, and radius of gyration. This study divides this dataset by hour, using 2- to 23-h segments to evaluate the representativeness due to the availability of mobile phone location data. The results show that different numbers of hourly segments affect estimations of human mobility indicators and can cause overestimations or underestimations from the individual perspective. On average, the total travel distance and movement entropy tend to be underestimated. The underestimation coefficient results for estimation of total travel distance are approximately linear, declining as the number of time segments increases, and the underestimation coefficient results for estimating movement entropy decline logarithmically as the time segments increase, whereas the radius of gyration tends to be more ambiguous due to the loss of isolated locations. This paper suggests that researchers should carefully interpret results derived from this type of

High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

International Nuclear Information System (INIS)

Chan, Silvia H; DenBaars, Steven P; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; Mishra, Umesh K

2016-01-01

This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N 2  + NH 3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm 2 V −1 s −1 (R sh  = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al 2 O 3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas. (paper)

High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

International Nuclear Information System (INIS)

Xue Bai-Qing; Wang Sheng-Kai; Han Le; Chang Hu-Dong; Sun Bing; Zhao Wei; Liu Hong-Gang

2013-01-01

To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm 2 /V·s are demonstrated on a Ge (111) substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal—oxide—semiconductor (MOS) interface by analyzing the electrical characteristics of HCl- and (NH 4 ) 2 S-passivated samples. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Structural Evolution and Mobile Shale Deformation in the Eastern Niger Delta

International Nuclear Information System (INIS)

Wiener, R. W.; Aikhionbare, D. O. L.

2002-01-01

Regional cross-sections and restorations of the eastern delta constructed from 2D and 3D seismic data show the structural evolution of paired extensional contractional belts and the kinematic and geometric evolution of mobile shale. The delta consists of an updip extensional belt and downdip zones of transitional and contractional deformation linked by a regional detachment. The extensional belt is characterized by zones of N-dipping (counterregional) and S-dipping (regional) normal faults.In the regional fault trend, sediment accommodation space is created largely by lateral movement of mobile substrate due to sediment loading and gravity. The transitional belt is characterized by low relief, shale-cored detachment folds and normal faults. The contractional belt consists of 2 parts, the high relief shale-cored detachment fold belt (mobile shale) and the fold/thrust belt: In the mobile shale belt, anticlines are generally symmetric and characterized by parallel-folded cover and highly variable thickness in the underlying ductile shale zone.Palinspastic restoration of the mobile shale by area balance shows a high degree of lateral and vertical mobility. Isostatic restoration of the depositional wedge that is the precursor to the mobile shale suggests lateral movement of 10s of kms from the extensional to the contractional domain. The fold and thrust belt is characterized by a train of asymmetric fault-related folds. The zone of ductile substrate is thin in this area, which may account for the change in structural style from high relief detachment folds in the mobile shale belt to a more classic fold/thrust belt style to the south

An interactive visualization tool for mobile objects

Science.gov (United States)

Kobayashi, Tetsuo

Recent advancements in mobile devices---such as Global Positioning System (GPS), cellular phones, car navigation system, and radio-frequency identification (RFID)---have greatly influenced the nature and volume of data about individual-based movement in space and time. Due to the prevalence of mobile devices, vast amounts of mobile objects data are being produced and stored in databases, overwhelming the capacity of traditional spatial analytical methods. There is a growing need for discovering unexpected patterns, trends, and relationships that are hidden in the massive mobile objects data. Geographic visualization (GVis) and knowledge discovery in databases (KDD) are two major research fields that are associated with knowledge discovery and construction. Their major research challenges are the integration of GVis and KDD, enhancing the ability to handle large volume mobile objects data, and high interactivity between the computer and users of GVis and KDD tools. This dissertation proposes a visualization toolkit to enable highly interactive visual data exploration for mobile objects datasets. Vector algebraic representation and online analytical processing (OLAP) are utilized for managing and querying the mobile object data to accomplish high interactivity of the visualization tool. In addition, reconstructing trajectories at user-defined levels of temporal granularity with time aggregation methods allows exploration of the individual objects at different levels of movement generality. At a given level of generality, individual paths can be combined into synthetic summary paths based on three similarity measures, namely, locational similarity, directional similarity, and geometric similarity functions. A visualization toolkit based on the space-time cube concept exploits these functionalities to create a user-interactive environment for exploring mobile objects data. Furthermore, the characteristics of visualized trajectories are exported to be utilized for data

Governing Grazing and Mobility in the Samburu Lowlands, Kenya

Directory of Open Access Journals (Sweden)

Annemiek Pas

2018-03-01

Full Text Available Pastoral mobility is seen as the most effective strategy to make use of constantly shifting resources. However, mobile pastoralism as a highly-valued strategy to manage grazing areas and exploit resource variability is becoming more complex, due to recurrent droughts, loss of forage, government-led settlement schemes, and enclosure of land for community conservation, among other reasons. Yet knowledge of how Samburu pastoralists perceive these changes, and govern and innovate in their mobility patterns and resource use, has received limited attention. This paper seeks to understand how Samburu pastoralists in the drylands of northern Kenya use and govern natural resources, how livestock grazing and mobility is planned for, and how boundaries and territory are constructed and performed both within and beyond the context of (nongovernmental projects. Fieldwork for this paper was conducted in Sesia, Samburu East, and consisted of interviews, focus group discussions, and participatory observation. Findings show that livestock mobility involves longer periods and more complex distances due to a shrinking resource base and new rules of access. Although access was previously generated based on the value of reciprocity, the creation of new forms of resource management results in conditional processes of inclusion and exclusion. Policy and project implementation has historically been driven by the imperative to secure land tenure and improve pasture in bounded areas. Opportunities to support institutions that promote mobility have been given insufficient attention.

Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

Energy Technology Data Exchange (ETDEWEB)

Lugani, L.; Carlin, J.-F.; Py, M. A.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

2014-09-15

We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 °C and show that they are not fully stable. In particular, InAlN top layers undergo degradation during high temperature annealing due to a surface related process, which causes the loss of crystal quality. This strongly impacts the transport properties of InAlN/GaN HEMT heterostructures; in particular, the mobility is significantly reduced. However, we demonstrate that high thermal stability can be achieved by capping with a GaN layer as thin as 0.5 nm. Those findings enabled us to realize in situ passivated HEMT heterostructures with state of the art transport properties.

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

International Nuclear Information System (INIS)

Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

2014-01-01

Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors

KAUST Repository

Chen, Hu

2017-07-19

The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.

Mobile financial services and financial inclusion: Is it a boon for savings mobilization?

Directory of Open Access Journals (Sweden)

Shem Alfred Ouma

2017-06-01

Full Text Available The adoption of mobile telephony to provide financial services in Africa has become instrumental in integrating the hitherto unbanked segments of the population to the mainstream financial systems. This study sought to establish this linkage by examining whether the pervasive use of mobile telephony to provide financial services is a boon for savings mobilization in selected countries in sub Saharan Africa. The findings show that availability and usage of mobile phones to provide financial services promotes the likelihood of saving at the household level. Not only does access to mobile financial services boost the likelihood to save, but also has a significant impact on the amounts saved, perhaps due to the frequency and convenience with which such transactions can be undertaken using a mobile phone. Both forms of savings, that is, basic mobile phone savings stored in the phone and bank integrated mobile savings are likely to be promoted by use of mobile phones. Thus, growing and deepening the scope for mobile phone financial services is an avenue for promoting savings mobilization, especially among the poor and low income groups with constrained access to formal financial services.

High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Wen-Ping, Gu; Huan-Tao, Duan; Jin-Yu, Ni; Yue, Hao; Jin-Cheng, Zhang; Qian, Feng; Xiao-Hua, Ma

2009-01-01

AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current I Dsat , maximal transconductance g m , and the positive shift of threshold voltage V TH at high drain-source voltage V DS . The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress. After the hot carrier stress with V DS = 20 V and V GS = 0 V applied to the device for 10 4 sec, the SiN passivation decreases the stress-induced degradation of I Dsat from 36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of I Dsat , which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Spinal mobilization vs conventional physiotherapy in the management of chronic low back pain due to spinal disk degeneration: a randomized controlled trial.

Science.gov (United States)

Krekoukias, Georgios; Gelalis, Ioannis D; Xenakis, Theodoros; Gioftsos, Georgios; Dimitriadis, Zacharias; Sakellari, Vasiliki

2017-05-01

The aim of the study was to examine the efficacy of spinal mobilization in subjects with low back pain (LBP) and associated spinal disk degeneration. Seventy-five subjects suffering from chronic LBP (>3 months) were randomly allocated into 3 groups of 25 subjects each. Each group received five treatment sessions with the first group receiving manual therapy (MT) (spinal mobilization), the second a sham treatment, and the third conventional physiotherapy (CP) (stretching exercises, transcutaneous electrical nerve stimulation, and massage). Subjects were assessed for their pain intensity using the numerical pain rating scale and for their self-reported disability using the Oswestry and Roland-Morris Questionnaire at baseline and after the completion of the five treatment sessions. Paired t -tests showed a significant improvement for all outcome measures in the MT and CP group ( p   0.05). MT is preferable to CP in order to reduce the pain intensity and disability in subjects with chronic LBP and associated disk degeneration. The findings of this study may lead to the establishment of spinal mobilization as one of the most preferable approaches for the management of LBP due to disk degeneration. 1b.

Design of Optimized Multimedia Data Streaming Management Using OMDSM over Mobile Networks

Directory of Open Access Journals (Sweden)

Byungjoo Park

2017-01-01

Full Text Available Mobility management is an essential challenge for supporting reliable multimedia data streaming over wireless and mobile networks in the Internet of Things (IoT for location-based mobile marketing applications. The communications among mobile nodes for IoT need to have a seamless handover for delivering high quality multimedia services. The Internet Engineering Task Force (IETF mobility management schemes are the proposals for handling the routing of IPv6 packets to mobile nodes that have moved away from their home network. However, the standard mobility management scheme cannot prevent packet losses due to longer handover latency. In this article, a new enhanced data streaming route optimization scheme is introduced that uses an optimized Transmission Control Protocol (TCP realignment algorithm in order to prevent the packet disordering problem whenever the nodes in the IoT environment are communicating with each other. With the proposed scheme, data packets sequence realignment can be prevented, the packet traffic speed can be controlled, and the TCP performance can be improved. The experimental results show that managing the packet order in proposed new scheme remarkably increases the overall TCP performance over mobile networks within the IoT environment thus ensuring the high quality of service (QoS for multimedia data streaming in location-based mobile marketing applications.

AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

International Nuclear Information System (INIS)

Wang Chong; He Yun-Long; Zheng Xue-Feng; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

2013-01-01

AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current—gain cutoff frequency (f T ) of 10 GHz and a power gain cutoff frequency (f max ) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C—V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C—V dual sweep

DESIGN APPLICATIONS BASED ON WEB MOBILE AT GAYA BARU SENIOR HIGH SCHOOL, CENTRAL LAMPUNG REGENCY AS PROMOTIONAL MEDIA

Directory of Open Access Journals (Sweden)

Ahmad Yudi

2017-05-01

Full Text Available Gaya Baru Senior High School is one of the educational institutions in Lampung which is a less favorite institution in the area is precisely located in the district of Seputih Surabaya Central Lampung Regency. Gaya Baru Senior High School has already had a website but not many known. This Senior High School is also no information system through mobile web to promote the institution. Nevertheless, in its development, students or community want to find information about the school can be directly through the mobile web application. So in its development requires fast service. From research that conducted in Gaya Baru High School, existence of new mobile web application system will facilitate student or society of that area, especially in subdistrict Seputih Surabaya district Central Lampung, and present information about the info about situation in high school of new style it can be accessed directly through the mobile web media.

Do mobile clinics provide high-quality antenatal care? A comparison of care delivery, knowledge outcomes and perception of quality of care between fixed and mobile clinics in central Haiti.

Science.gov (United States)

Phillips, Erica; Stoltzfus, Rebecca J; Michaud, Lesly; Pierre, Gracia Lionel Fils; Vermeylen, Francoise; Pelletier, David

2017-10-16

Antenatal care (ANC) is an important health service for women in developing countries, with numerous proven benefits. Global coverage of ANC has steadily increased over the past 30 years, in part due to increased community-based outreach. However, commensurate improvements in health outcomes such as reductions in the prevalence of maternal anemia and infants born small-for-gestational age have not been achieved, even with increased coverage, indicating that quality of care may be inadequate. Mobile clinics are one community-based strategy used to further improve coverage of ANC, but their quality of care delivery has rarely been evaluated. To determine the quality of care of ANC in central Haiti, we compared adherence to national guidelines between fixed and mobile clinics by performing direct observations of antenatal care consultations and exit interviews with recipients of care using a multi-stage random sampling procedure. Outcome variables were eight components of care, and women's knowledge and perception of care quality. There were significant differences in the predicted proportion or probability of recommended services for four of eight care components, including intake, laboratory examinations, infection control, and supplies, iron folic acid supplements and Tetanus Toxoid vaccine provided to women. These care components were more likely performed in fixed clinics, except for distribution of supplies, iron-folic acid supplements, and Tetanus Toxoid vaccine, more likely provided in mobile clinics. There were no differences between clinic type for the proportion of total physical exam procedures performed, health and communication messages delivered, provider communication or documentation. Women's knowledge about educational topics was poor, but women perceived extremely high quality of care in both clinic models. Although adherence to guidelines differed by clinic type for half of the care components, both clinics had a low percentage of overall services

Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

KAUST Repository

Kanimozhi, Catherine K.; Yaacobi-Gross, Nir; Chou, Kang Wei; Amassian, Aram; Anthopoulos, Thomas D.; Patil, Satish P.

2012-01-01

In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a

High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

KAUST Repository

Hou, Zhipeng; Wang, Wenhong; Xu, Guizhou; Zhang, Xiaoming; Wei, Zhiyang; Shen, Shipeng; Liu, Enke; Yao, Yuan; Chai, Yisheng; Sun, Young; Xi, Xuekui; Wang, Wenquan; Liu, Zhongyuan; Wu, Guangheng; Zhang, Xixiang

2015-01-01

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole

Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

International Nuclear Information System (INIS)

Olsen, S.H.; Dobrosz, P.; Escobedo-Cousin, E.; Bull, S.J.; O'Neill, A.G.

2005-01-01

Dual channel strained Si/SiGe CMOS architectures currently receive great attention due to maximum performance benefits being predicted for both n- and p-channel MOSFETs. Epitaxial growth of a compressively strained SiGe layer followed by tensile strained Si can create a high mobility buried hole channel and a high mobility surface electron channel on a single relaxed SiGe virtual substrate. However, dual channel n-MOSFETs fabricated using a high thermal budget exhibit compromised mobility enhancements compared with single channel devices, in which both electron and hole channels form in strained Si. This paper investigates the mobility-limiting mechanisms of dual channel structures. The first evidence of increased interface roughness due to the introduction of compressively strained SiGe below the tensile strained Si channel is presented. Interface corrugations degrade electron mobility in the strained Si. Roughness measurements have been carried out using AFM and TEM. Filtering AFM images allowed roughness at wavelengths pertinent to carrier transport to be studied and the results are in agreement with electrical data. Furthermore, the first comparison of strain measurements in the surface channels of single and dual channel architectures is presented. Raman spectroscopy has been used to study channel strain both before and after processing and indicates that there is no impact of the buried SiGe layer on surface macrostrain. The results provide further evidence that the improved performance of the single channel devices fabricated using a high thermal budget arises from improved surface roughness and reduced Ge diffusion into the Si channel

Effect of Ultra High Frequency Mobile Phone Radiation on Human Health

Science.gov (United States)

Moradi, Mosa; Naghdi, Nasrollah; Hemmati, Hamidreza; Asadi-Samani, Majid; Bahmani, Mahmoud

2016-01-01

Introduction Public and occupational exposure to electromagnetic fields due to the growing trend of electronic devices may cause adverse effects on human health. This paper describes the risk of mutation and sexual trauma and infertility in masculine sexual cell by mobile phone radiations. Methods In this study, we measured the emitted dose from a radiofrequency device, such as switching high voltage at different frequencies using a scintillation detector. The switching high voltage power supply (HVPS) was built for the Single Photon Emission Computed Tomography (SPECT) system. For radiation dosimetry, we used an ALNOR scintillator that can measure gamma radiation. The simulation was performed by MATLAB software, and data from the International Commission on Non-Ionizing Radiation Protection (ICNIRP) were used to verify the simulation. Results We investigated the risks that result from the waves, according to a report by International Commission on Non Ionizing Radiation Protection (ICNIRP), to every organ of the body is defined by the beam and electromagnetic radiation from this electronic device on people. The results showed that the maximum personal dose over a 15-min period working at the mentioned HVPS did not exceed 0.31 μSV/h (with an aluminum shield). So, according to other sources of radiation, continuous working time of the system should not be more than 10 hours. Finally, a characteristic curve for secure working with modules at different frequencies was reported. The RF input signal to the body for maximum penetration depth (δ) and electromagnetic energy absorption rate (SAR) of biological tissue were obtained for each tissue. Conclusion The results of this study and International Commission of Non Ionization Radiation Protection (ICNIRP) reports showed the people who spend more than 50 minutes a day using a cell phone could have early dementia or other thermal damage due to the burning of glucose in the brain. PMID:27382458

Results of Sludge Mobilization Testing at Hanford High Level Waste (HLW) Tank

International Nuclear Information System (INIS)

STAEHR, T.W.

2001-01-01

Waste stored in the Tank 241-AZ-101 at the US DOE Hanford is scheduled as the initial feed for high-level waste vitrification. Tank 241-AZ-101 currently holds over 3,000,000 liters of waste made up of a settled sludge layer covered by a layer of liquid supernant. To retrieve the waste from the tank, it is necessary to mobilize and suspend the settled sludge so that the resulting slurry can be pumped from the tank for treatment and vitrification. Two 223.8-kilowatt mixer pumps have been installed in Tank 241-AZ-101 to mobilize the settled sludge layer of waste for retrieval. In May of 2000, the mixer pumps were subjected to a series of tests to determine (1) the extent to which the mixer pumps could mobilize the settle sludge layer of waste, (2) if the mixer pumps could function within operating parameters, and (3) if state-of-the-art monitoring equipment could effectively monitor and quantify the degree of sludge mobilization and suspension. This paper presents the major findings and results of the Tank 241-AZ-101 mixer pump tests, based on analysis of data and waste samples that were collected during the testing. Discussion of the results focuses on the effective cleaning radius achieved and the volume and concentration of sludge mobilized, with both one and two pumps operating in various configurations and speeds. The Tank 241-AZ-101 mixer pump tests were unique in that sludge mobilization parameters were measured using actual waste in an underground storage tank at the hanford Site. The methods and instruments that were used to measure waste mobilization parameters in Tank 241-AZ-101 can be used in other tanks. It can be concluded from the testing that the use of mixer pumps is an effective retrieval method for the mobilization of settled solids in Tank 241-AZ-101

Mobile phone induced sensorineural hearing loss

International Nuclear Information System (INIS)

Al-Dousary, Surayie H.

2007-01-01

The increased use of mobile phones worldwide has focused interest on the biological effects and possible health outcomes of exposure to radiofrequency fields from mobile phones, and their base stations. Various reports suggest that mobile phone use can cause health problems like fatigue, headache, dizziness, tension and sleep disturbances, however, only limited research data is available in medical literature regarding interaction between electromagnetic fields emitted by mobile phones and auditory function and the possible impact on hearing. We report a case of sensorineural hearing loss due to Global System for Mobile Communication mobile phone use in a 42-year-old male. (author)

Studies on deaf mobile application

Science.gov (United States)

Nathan, Shelena Soosay; Hussain, Azham; Hashim, Nor Laily

2016-08-01

The deaf normally considered to be disabled that do not need any mobile technology due to the inabilities of hearing and talking. However, many deaf are using mobile phone in their daily life for various purposes such as communication and learning. Many studies have attempted to identify the need of deaf people in mobile application and level of usage of the applications. This study aims in studying the recent research conducted on deaf mobile application to understand the level of importance of mobile technology for this disabled community. This paper enable identification of studies conducted are limited and the need of more research done of this disabled people to ensure their privilege of using mobile technology and its application, which leads to the identification of deaf user requirement for mobile application as future study.

Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors

International Nuclear Information System (INIS)

Zhang Kai; Cao Meng-Yi; Chen Yong-He; Yang Li-Yuan; Wang Chong; Ma Xiao-Hua; Hao Yue

2013-01-01

V-gate GaN high-electron-mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si 3 N 4 recess etching technology. Compared with standard HEMTs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco “ATLAS” for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at the gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

High mobility AlGaN/GaN devices for β"−-dosimetry

International Nuclear Information System (INIS)

Schmid, Martin; Howgate, John; Ruehm, Werner; Thalhammer, Stefan

2016-01-01

There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β"−-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β"−-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β"−-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β"−-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

Hemoadsorption of high-mobility-group box 1 using a porous polymethylmethacrylate fiber in a swine acute liver failure model.

Science.gov (United States)

Amemiya, Ryusuke; Shinoda, Masahiro; Yamada, Masayuki; Ueno, Yoshiyuki; Shimada, Kaoru; Fujieda, Hiroaki; Yagi, Hiroshi; Mizota, Takamasa; Nishiyama, Ryo; Oshima, Go; Yamada, Shingo; Matsubara, Kentaro; Abe, Yuta; Hibi, Taizo; Kitago, Minoru; Obara, Hideaki; Itano, Osamu; Kitagawa, Yuko

2018-04-01

High-mobility-group box chromosomal protein 1 has been identified as an important mediator of various kinds of acute and chronic inflammation. In this study, we aimed to develop a column that effectively adsorbs high-mobility-group box chromosomal protein 1 by altering the pore size of the fiber. First, we produced three types of porous polymethylmethacrylate fiber by altering the concentration of polymethylmethacrylate dissolved in dimethylsulfoxide. We then selected a fiber based on the results of an in vitro incubation test of high-mobility-group box chromosomal protein 1 adsorption. Using the selected fiber, we constructed a new column and tested its high-mobility-group box chromosomal protein 1 adsorption capacity during 4-h extracorporeal hemoperfusion in a swine acute liver failure model. Electron microscope observation showed that the three types of fibers had different pore sizes on the surface and in cross section, which were dependent on the concentration of polymethylmethacrylate. In the in vitro incubation test, fiber with moderate-sized pores demonstrated the highest adsorption capacity. In the in vivo hemoperfusion study, the ratio of the high-mobility-group box chromosomal protein 1 concentration at the outlet versus the inlet of the column was significantly lower with the new column than with the control column during 4-h extracorporeal hemoperfusion. The normalized plasma level of high-mobility-group box chromosomal protein 1 at 12 h after the completion of hemoperfusion was significantly lower with the new column than with the control column. The newly developed polymethylmethacrylate column adsorbs high-mobility-group box chromosomal protein 1 during hemoperfusion in swine ALF model.

Mobile networks architecture

CERN Document Server

Perez, Andre

2013-01-01

This book explains the evolutions of architecture for mobiles and summarizes the different technologies:- 2G: the GSM (Global System for Mobile) network, the GPRS (General Packet Radio Service) network and the EDGE (Enhanced Data for Global Evolution) evolution;- 3G: the UMTS (Universal Mobile Telecommunications System) network and the HSPA (High Speed Packet Access) evolutions:- HSDPA (High Speed Downlink Packet Access),- HSUPA (High Speed Uplink Packet Access),- HSPA+;- 4G: the EPS (Evolved Packet System) network.The telephone service and data transmission are the

Mobile phones and health concerns

International Nuclear Information System (INIS)

Vaikuntam, Shreenivas; Pushparaja

2003-01-01

As Mobile Cellular phone ownership grows throughout the developed as well as the developing world, concerns about the health risks due to radio frequency emissions from the mobile phone base stations and due to usage of mobile handsets are slowly growing. This article has a look at the concepts used in the mobile phone technology, the power outputs from base stations and mobile handsets, the quantities Specific Energy Absorption Rate (SAR) and power density as a means to assess the effects on biological tissue. The precautionary approach to manage the health risks from mobile phones by specifying exposure guidelines is explored. Having surveyed the relevant epidemiological surveys and finding them inconclusive, NRPB, United Kingdom's national regulatory body has issued exposure guidelines based on the potential of RF radiation to cause illness or injury through heating of body tissues. USA's Federal Communications Commission (FCC) limits are also listed for comparison. ICNIRP has issued two-tier guidelines, differentiating between occupational and public exposure. The public exposure limits are kept at one-fifth of the occupational exposure limits. The evidence till date, suggests that exposure to RF radiation below NRPB and ICNIRP limits do not cause adverse effects to the general population. However, the gaps in our knowledge warrant a precautionary approach. (author)

Outline of a Hardware Reconfiguration Framework for Modular Industrial Mobile Manipulators

DEFF Research Database (Denmark)

Schou, Casper; Bøgh, Simon; Madsen, Ole

2014-01-01

This paper presents concepts and ideas of a hard- ware reconfiguration framework for modular industrial mobile manipulators. Mobile manipulators pose a highly flexible pro- duction resource due to their ability to autonomously navigate between workstations. However, due to this high flexibility new...... approaches to the operation of the robots are needed. Reconfig- uring the robot to a new task should be carried out by shop floor operators and, thus, be both quick and intuitive. Late research has already proposed a method for intuitive robot programming. However, this relies on a predetermined hardware...... configuration. Finding a single multi-purpose hardware configuration suited to all tasks is considered unrealistic. As a result, the need for reconfiguration of the hardware is inevitable. In this paper an outline of a framework for making hardware reconfiguration quick and intuitive is presented. Two main...

Followup Audit: DLA Officials Took Appropriate Actions to Address Concerns With Repair Parts for the High Mobility Multipurpose Wheeled Vehicle

Science.gov (United States)

2016-04-29

Followup Audit : DLA Officials Took Appropriate Actions to Address Concerns With Repair Parts for the High Mobility Multipurpose Wheeled Vehicle A P R I L...Results in Brief Followup Audit : DLA Officials Took Appropriate Actions to Address Concerns With Repair Parts for the High Mobility Multipurpose Wheeled...and Maritime Paid Too Much for High Mobility Multipurpose Wheeled Vehicle Repair Parts,” (HMMWV) was issued on April 4, 2014. The audit

Increasing patient mobility through an individualized goal-centered hospital mobility program: A quasi-experimental quality improvement project.

Science.gov (United States)

Klein, Lisa M; Young, Daniel; Feng, Du; Lavezza, Annette; Hiser, Stephanie; Daley, Kelly N; Hoyer, Erik H

2018-02-27

Hospital-acquired functional decline due to decreased mobility has negative impacts on patient outcomes. Current nurse-directed mobility programs lack a standardized approach to set achievable mobility goals. We aimed to describe implementation and outcomes from a nurse-directed patient mobility program. The quality improvement mobility program on the project unit was compared to a similar control unit providing usual care. The Johns Hopkins Mobility Goal Calculator was created to guide a daily patient mobility goal based on the level of mobility impairment. On the project unit, patient mobility increased from 5.2 to 5.8 on the Johns Hopkins Highest Level of Mobility score, mobility goal attainment went from 54.2% to 64.2%, and patients exceeding the goal went from 23.3% to 33.5%. All results were significantly higher than the control unit. An individualized, nurse-directed, patient mobility program using daily mobility goals is a successful strategy to improve daily patient mobility in the hospital. Copyright © 2018 Elsevier Inc. All rights reserved.

Behavioral System Level Power Consumption Modeling of Mobile Video Streaming applications

OpenAIRE

Benmoussa , Yahia; Boukhobza , Jalil; Hadjadj-Aoul , Yassine; Lagadec , Loïc; Benazzouz , Djamel

2012-01-01

National audience; Nowadays, the use of mobile applications and terminals faces fundamental challenges related to energy constraint. This is due to the limited battery lifetime as compared to the increasing hardware evolution. Video streaming is one of the most energy consuming applications in a mobile system because of its intensive use of bandwidth, memory and processing power. In this work, we aim to propose a methodology for building and validating a high level global power consumption mo...

Mobile Usability

DEFF Research Database (Denmark)

Aryana, Bijan; Clemmensen, Torkil

2013-01-01

In this article, a country specific comparative mobile usability study is presented, using Iran and Turkey as the two chosen emerging/emergent nation exemplars of smartphone usage and adoption. In a focus group study, three mobile applications were selected by first-time users of smartphones...... personal contacts. The results and analysis establish the existence of country specific issues and concerns, as well as reveal generic usability issues. The article concludes that the source of these issues is most likely due to a combination of certain contextual features endemic to both Iran and Turkey...

An Effective Approach for Mobile ad hoc Network via I-Watchdog Protocol

Directory of Open Access Journals (Sweden)

Nidhi Lal

2014-12-01

Full Text Available Mobile ad hoc network (MANET is now days become very famous due to their fixed infrastructure-less quality and dynamic nature. They contain a large number of nodes which are connected and communicated to each other in wireless nature. Mobile ad hoc network is a wireless technology that contains high mobility of nodes and does not depend on the background administrator for central authority, because they do not contain any infrastructure. Nodes of the MANET use radio wave for communication and having limited resources and limited computational power. The Topology of this network is changing very frequently because they are distributed in nature and self-configurable. Due to its wireless nature and lack of any central authority in the background, Mobile ad hoc networks are always vulnerable to some security issues and performance issues. The security imposes a huge impact on the performance of any network. Some of the security issues are black hole attack, flooding, wormhole attack etc. In this paper, we will discuss issues regarding low performance of Watchdog protocol used in the MANET and proposed an improved Watchdog mechanism, which is called by I-Watchdog protocol that overcomes the limitations of Watchdog protocol and gives high performance in terms of throughput, delay.

Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications.

Science.gov (United States)

Makowski, M S; Kim, S; Gaillard, M; Janes, D; Manfra, M J; Bryan, I; Sitar, Z; Arellano, C; Xie, J; Collazo, R; Ivanisevic, A

2013-02-18

AlGaN/GaN high electron mobility transistors (HEMTs) were used to measure electrical characteristics of physisorbed gold nanoparticles (Au NPs) functionalized with alkanethiols with a terminal methyl, amine, or carboxyl functional group. Additional alkanethiol was physisorbed onto the NP treated devices to distinguish between the effects of the Au NPs and alkanethiols on HEMT operation. Scanning Kelvin probe microscopy and electrical measurements were used to characterize the treatment effects. The HEMTs were operated near threshold voltage due to the greatest sensitivity in this region. The Au NP/HEMT system electrically detected functional group differences on adsorbed NPs which is pertinent to biosensor applications.

Secure steganography designed for mobile platforms

Science.gov (United States)

Agaian, Sos S.; Cherukuri, Ravindranath; Sifuentes, Ronnie R.

2006-05-01

Adaptive steganography, an intelligent approach to message hiding, integrated with matrix encoding and pn-sequences serves as a promising resolution to recent security assurance concerns. Incorporating the above data hiding concepts with established cryptographic protocols in wireless communication would greatly increase the security and privacy of transmitting sensitive information. We present an algorithm which will address the following problems: 1) low embedding capacity in mobile devices due to fixed image dimensions and memory constraints, 2) compatibility between mobile and land based desktop computers, and 3) detection of stego images by widely available steganalysis software [1-3]. Consistent with the smaller available memory, processor capabilities, and limited resolution associated with mobile devices, we propose a more magnified approach to steganography by focusing adaptive efforts at the pixel level. This deeper method, in comparison to the block processing techniques commonly found in existing adaptive methods, allows an increase in capacity while still offering a desired level of security. Based on computer simulations using high resolution, natural imagery and mobile device captured images, comparisons show that the proposed method securely allows an increased amount of embedding capacity but still avoids detection by varying steganalysis techniques.

Thermoelectric transport properties of high mobility organic semiconductors

Science.gov (United States)

Venkateshvaran, Deepak; Broch, Katharina; Warwick, Chris N.; Sirringhaus, Henning

2016-09-01

Transport in organic semiconductors has traditionally been investigated using measurements of the temperature and gate voltage dependent mobility of charge carriers within the channel of organic field-effect transistors (OFETs). In such measurements, the behavior of charge carrier mobility with temperature and gate voltage, studied together with carrier activation energies, provide a metric to quantify the extent of disorder within these van der Waals bonded materials. In addition to the mobility and activation energy, another potent but often-overlooked transport coefficient useful in understanding disorder is the Seebeck coefficient (also known as thermoelectric power). Fundamentally, the Seebeck coefficient represents the entropy per charge carrier in the solid state, and thus proves powerful in distinguishing materials in which charge carriers move freely from those where a high degree of disorder causes the induced carriers to remain trapped. This paper briefly covers the recent highlights in the field of organic thermoelectrics, showing how significant strides have been made both from an applied standpoint as well as from a viewpoint of fundamental thermoelectric transport physics. It shall be illustrated how thermoelectric transport parameters in organic semiconductors can be tuned over a significant range, and how this tunability facilitates an enhanced performance for heat-to-electricity conversion as well as quantifies energetic disorder and the nature of the density of states (DOS). The work of the authors shall be spotlighted in this context, illustrating how Seebeck coefficient measurements in the polymer indacenodithiophene-co-benzothiadiazole (IDTBT) known for its ultra-low degree of torsion within the polymer backbone, has a trend consistent with low disorder. 1 Finally, using examples of the small molecules C8-BTBT and C10-DNTT, it shall be discussed how the Seebeck coefficient can aid the estimation of the density and distribution of trap states

An Investigation of the Relationship between High-School Students' Problematic Mobile Phone Use and Their Self-Esteem Levels

Science.gov (United States)

Isiklar, Abdullah; Sar, Ali Haydar; Durmuscelebi, Mustafa

2013-01-01

Excessive mobile phone use, especially among adolescents, brings too many debates about its effects. To this end, in this study, we try to investigate the relationship between adolescents' mobile phone use and their self-esteem levels with regard to their genders. For 919 high school students, we evaluated mobile phone use concerning their…

Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

International Nuclear Information System (INIS)

Fortunato, Elvira M.C.; Barquinha, Pedro M.C.; Pimentel, Ana C.M.B.G.; Goncalves, Alexandra M.F.; Marques, Antonio J.S.; Martins, Rodrigo F.P.; Pereira, Luis M.N.

2004-01-01

We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a saturation mobility of 27 cm 2 /V s, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3x10 5 . The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics

Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Pelliccione, M. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106 (United States); Bartel, J.; Goldhaber-Gordon, D. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States); Sciambi, A. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Pfeiffer, L. N.; West, K. W. [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

2014-11-03

Correlated electron states in high mobility two-dimensional electron systems (2DESs), including charge density waves and microemulsion phases intermediate between a Fermi liquid and Wigner crystal, are predicted to exhibit complex local charge order. Existing experimental studies, however, have mainly probed these systems at micron to millimeter scales rather than directly mapping spatial organization. Scanning probes should be well-suited to study the spatial structure of these states, but high mobility 2DESs are found at buried semiconductor interfaces, beyond the reach of conventional scanning tunneling microscopy. Scanning techniques based on electrostatic coupling to the 2DES deliver important insights, but generally with resolution limited by the depth of the 2DES. In this letter, we present our progress in developing a technique called “virtual scanning tunneling microscopy” that allows local tunneling into a high mobility 2DES. Using a specially designed bilayer GaAs/AlGaAs heterostructure where the tunnel coupling between two separate 2DESs is tunable via electrostatic gating, combined with a scanning gate, we show that the local tunneling can be controlled with sub-250 nm resolution.

Dietary differentiation and the evolution of population genetic structure in a highly mobile carnivore.

Directory of Open Access Journals (Sweden)

Małgorzata Pilot

Full Text Available Recent studies on highly mobile carnivores revealed cryptic population genetic structures correlated to transitions in habitat types and prey species composition. This led to the hypothesis that natal-habitat-biased dispersal may be responsible for generating population genetic structure. However, direct evidence for the concordant ecological and genetic differentiation between populations of highly mobile mammals is rare. To address this we analyzed stable isotope profiles (δ(13C and δ(15N values for Eastern European wolves (Canis lupus as a quantifiable proxy measure of diet for individuals that had been genotyped in an earlier study (showing cryptic genetic structure, to provide a quantitative assessment of the relationship between individual foraging behavior and genotype. We found a significant correlation between genetic distances and dietary differentiation (explaining 46% of the variation in both the marginal test and crucially, when geographic distance was accounted for as a co-variable. These results, interpreted in the context of other possible mechanisms such as allopatry and isolation by distance, reinforce earlier studies suggesting that diet and associated habitat choice are influencing the structuring of populations in highly mobile carnivores.

Visualizing Mobility of Public Transportation System.

Science.gov (United States)

Zeng, Wei; Fu, Chi-Wing; Arisona, Stefan Müller; Erath, Alexander; Qu, Huamin

2014-12-01

Public transportation systems (PTSs) play an important role in modern cities, providing shared/massive transportation services that are essential for the general public. However, due to their increasing complexity, designing effective methods to visualize and explore PTS is highly challenging. Most existing techniques employ network visualization methods and focus on showing the network topology across stops while ignoring various mobility-related factors such as riding time, transfer time, waiting time, and round-the-clock patterns. This work aims to visualize and explore passenger mobility in a PTS with a family of analytical tasks based on inputs from transportation researchers. After exploring different design alternatives, we come up with an integrated solution with three visualization modules: isochrone map view for geographical information, isotime flow map view for effective temporal information comparison and manipulation, and OD-pair journey view for detailed visual analysis of mobility factors along routes between specific origin-destination pairs. The isotime flow map linearizes a flow map into a parallel isoline representation, maximizing the visualization of mobility information along the horizontal time axis while presenting clear and smooth pathways from origin to destinations. Moreover, we devise several interactive visual query methods for users to easily explore the dynamics of PTS mobility over space and time. Lastly, we also construct a PTS mobility model from millions of real passenger trajectories, and evaluate our visualization techniques with assorted case studies with the transportation researchers.

Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.

Science.gov (United States)

Heo, Cheon; Jang, Jongjin; Lee, Kyngjae; So, Byungchan; Lee, Kyungbae; Ko, Kwangse; Nam, Okhyun

2017-01-01

We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm²/V·s and 3.23 × 10¹³ cm⁻², respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.

Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

National Research Council Canada - National Science Library

Holmes, Kenneth

2002-01-01

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

Science.gov (United States)

Hou, H. W.; Liu, Z.; Teng, J. H.; Palacios, T.; Chua, S. J.

2017-04-01

In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.

Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

Energy Technology Data Exchange (ETDEWEB)

Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

2014-08-25

An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup −14} to 10{sup −8} M and a detection limit below 10{sup −14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

Energy Technology Data Exchange (ETDEWEB)

Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

2011-07-01

Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

Ionization of water clusters by fast Highly Charged Ions: Stability, fragmentation, energetics and charge mobility

International Nuclear Information System (INIS)

Legendre, S; Maisonny, R; Capron, M; Bernigaud, V; Cassimi, A; Gervais, B; Grandin, J-P; Huber, B A; Manil, B; Rousseau, P; Tarisien, M; Adoui, L; Lopez-Tarifa, P; AlcamI, M; MartIn, F; Politis, M-F; Penhoat, M A Herve du; Vuilleumier, R; Gaigeot, M-P; Tavernelli, I

2009-01-01

We study dissociative ionization of water clusters by impact of fast Ni ions. Cold Target Recoil Ion Momentum Spectroscopy (COLTRIMS) is used to obtain information about stability, energetics and charge mobility of the ionized clusters. An unusual stability of the (H 2 O) 4 H ''+ ion is observed, which could be the signature of the so called ''Eigen'' structure in gas phase water clusters. High charge mobility, responsible for the formation of protonated water clusters that dominate the mass spectrum, is evidenced. These results are supported by CPMD and TDDFT simulations, which also reveal the mechanisms of such mobility.

Sediment mobility and bedload transport rates in a high-elevation glacier-fed stream (Saldur river, Eastern Italian Alps)

Science.gov (United States)

Dell'Agnese, A.; Mao, L.; Comiti, F.

2012-04-01

The assessment of bedload transport in high-gradient streams is necessary to evaluate and mitigate flood hazards and to understand morphological processes taking place in the whole river network. Bedload transport in steep channels is particularly difficult to predict due to the complex and varying types of flow resistance, the very coarse and heterogeneous sediments, and the activity and connections of sediment sources at the basin scale. Yet, bedload measurements in these environments are still relatively scarce, and long-term monitoring programs are highly valuable to explore spatial and temporal variability of bedload processes. Even fewer are investigations conducted in high-elevation glaciarized basins, despite their relevance in many regions worldwide. The poster will present bedload transport measurements in a newly established (spring 2011) monitoring station in the Saldur basin (Eastern Italian Alps), which presents a 3.3 km2 glacier in its upper part. At 2100 m a.s.l. (20 km2 drainage area), a pressure transducer measures flow stage and bedload transport is monitored continuously by means of a hydrophone (a cylindrical steel pipe with microphones registering particle collisions) and by 4 fixed antennas for tracing clasts equipped with PITs (Passive Integrated Transponders). At the same location bedload samples are collected by using both a "Bunte" bedload trap and a "Helley-Smith" sampler at 5 positions along a 5 m wide cross-section. Bedload was measured from June to August 2011 during daily discharge fluctuations due to snow- and ice- melt flows. Samples were taken at a large range of discharges (1.1 to 4.6 m3 s-1) and bedload rates (0.01 to 700 g s-1 m-1). As expected, samples taken using the two samplers are not directly comparable even if taken virtually at the same time and at the same location across the section. Results indicate that the grain size of the transported material increases with the shear stress acting on the channel bed and with the

Smart mobility solution with multiple input Output interface.

Science.gov (United States)

Sethi, Aartika; Deb, Sujay; Ranjan, Prabhat; Sardar, Arghya

2017-07-01

Smart wheelchairs are commonly used to provide solution for mobility impairment. However their usage is limited primarily due to high cost owing from sensors required for giving input, lack of adaptability for different categories of input and limited functionality. In this paper we propose a smart mobility solution using smartphone with inbuilt sensors (accelerometer, camera and speaker) as an input interface. An Emotiv EPOC+ is also used for motor imagery based input control synced with facial expressions in cases of extreme disability. Apart from traction, additional functions like home security and automation are provided using Internet of Things (IoT) and web interfaces. Although preliminary, our results suggest that this system can be used as an integrated and efficient solution for people suffering from mobility impairment. The results also indicate a decent accuracy is obtained for the overall system.

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Lim, Jong-Won, E-mail: jwlim@etri.re.kr [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Park, Hyung-Moo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Division of Electronics and Electrical Engineering, Dongguk University, Seoul (Korea, Republic of)

2013-11-29

We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f{sub T}) of 18 GHz, and a maximum oscillation frequency (f{sub max}) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz.

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

International Nuclear Information System (INIS)

Lim, Jong-Won; Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo; Park, Hyung-Moo

2013-01-01

We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f T ) of 18 GHz, and a maximum oscillation frequency (f max ) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz

Lumbar spinal mobility changes among adults with advancing age

Directory of Open Access Journals (Sweden)

Ismaila Adamu Saidu

2011-01-01

Conclusion : Using these data, we developed normative values of spinal mobility for each sex and age group. This study helps the clinicians to understand and correlate the restrictions of lumbar spinal mobility due to age and differentiate the limitations due to disease.

Soft Mobility and Urban Transformation

Directory of Open Access Journals (Sweden)

Rosa Anna La Rocca

2010-04-01

Full Text Available This paper examines some European cases referred to promotion of soft mobility as a new lifestyle aimed to improve benefits on environment and urban liveability. Soft mobility includes any non-motorized transport (human powered mobility. According to this, soft mobility refers to pedestrian, bicycle, roller skate and skateboard transfers. It could be indented as “zeroimpact” mobility too. As a matter of fact, the words to define this way of moving have not been codified yet, therefore mobilitè douce, soft mobility, slow traffic are synonymous in referring mainly to pedestrians and cyclists to indicate alternative to car use. Soft mobility, indeed, can be defined as a special form of sustainable mobility able to optimize urban liveability, by keeping the individual right to move. At present, cities are engaged in defining policies, procedures and interventions to further “slow traffic”, both to relieve the traffic congestion, and to work for regeneration and environmental improvements. This asks for an in-depth cooperation between different political and administrative levels to achieve common objectives of development more attentive to environmental concerns. Despite this increasing attention, the idea of a “network” for soft mobility has not been yet achieved and the supply of integrated facilities and services as an alternative to the car use seems to be still difficult of accomplishment. High disparity characterizes European countries in promoting soft mobility: despite a prolific production of laws and roles referred to emergency of adopting alternative ways of moving to minimize negatives impacts (especially air and noise pollution as very threat to health due to car dependence for urban short distance too. And yet, soft mobility could represent a real occasion of urban and territorial regeneration aimed to rehabilitate some disused paths and routes (greenways. Some successful European cases show how it is possible to

Mobile satellite business networks: A part of the European mobile system

Science.gov (United States)

deMateo, M. L.; Jongejans, A.; Loisy, C.; VanHimbeeck, C.; Marchal, J. P.; Borella, A.; Sartori, M.

1995-01-01

The European Space Agency (ESA) is presently procuring an L-band payload EMS, to be embarked on the ITALSAT-2 satellite due for launch in early 1996, in order to promote a regional European mobile system. One of the Land Mobile Communication systems supported by EMS is the MSBN (Mobile Satellite Business Network) voice and data system which will offer the services of a business network on a seamless European coverage. This paper will first recall the characteristics of the MSBN system, which is based on quasi-synchronized CDMA (Code Division Multiple Access) techniques in both directions, and then describe the CDMA receivers implementation. Main validation test results will also be reported confirming predicted performances.

Mobile free-space optical communications: a feasibility study of various battlefield scenarios

Science.gov (United States)

Harris, Alan; Al-Akkoumi, Mouhammad K.; Sluss, James J., Jr.

2012-06-01

Free Space Optics (FSO) technology was originally envisioned to be a viable solution for the provision of high bandwidth optical connectivity in the last mile of today's telecommunications infrastructure. Due to atmospheric limitations inherent to FSO technology, FSO is now widely envisioned as a solution for the provision of high bandwidth, temporary mobile communications links. The need for FSO communications links will increase as mobility is introduced to this technology. In this paper, a theoretical solution for adding mobility to FSO communication links is introduced. Three-dimensional power estimation studies are presented to represent mobile FSO transmission under various weather conditions. Three wavelengths, 0.85, 1.55 and 10 um, are tested and compared to illustrate the pros and cons of each source wavelength used for transmission, depending on prevalent weather conditions and atmospheric turbulence conditions. A simulation analysis of the transmission properties of the source wavelengths used in the study is shown.

Wavelet-Coded OFDM for Next Generation Mobile Communications

DEFF Research Database (Denmark)

Cavalcante, Lucas Costa Pereira; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

2016-01-01

In this work, we evaluate the performance of Wavelet-Coding into offering robustness for OFDM signals against the combined effects of varying fading and noise bursts. Wavelet-Code enables high diversity gains with a low complex receiver, and, most notably, without compromising the system’s spectr......-wave frequencies in future generation mobile communication due to its robustness against multipath fading....

Cassette pontoon bridge of high mobility

Directory of Open Access Journals (Sweden)

Krzysztof KOSIUCZENKO

2011-01-01

Full Text Available Looking through the known and used buoyant systems, it can be remarked that the single buoyant segments are the stiff objects made of steel or plastic with variable dimensions and a complex construction. The ready to use buoyant segments, that assure the proper displacement, must have the factory leak-tightness. They take up a big transportation volume and need the assurance of the suitably abundant means of transport. Usually the heavy wheeled vehicles are needed because of high own mass of buoyant segment and large gauges. The exploitation of such constructions is very expensive. A cassette pontoon bridge, presented in this paper, is the proposition of the increase of the mobility of construction. The decrease of the single buoyant segment dimensions with the assurance of the capacity leads that more segments fit into in the same dimensions of the loading compartment of the vehicle and storage accommodation. The application of standardized joints assures the assembly efficiency with not numerous crew.

Mobility of Non Permanent Mobility and Remmitance, Case in Tanjung Municipality, Juwiring, Klaten District

Directory of Open Access Journals (Sweden)

Umrotun Umrotun

2014-12-01

Full Text Available The study Non Permanent Mobility and Remmitance was conducted in Tanjung Village Juwiring Subdistrict Klaten entral Java. Non Permanent Mobility in the village was due to the outcome of the development, particularly the transportation facilities permitting the public transport to reach the depth of the village. The mobility of going back and from village to town was the consequence of the increasing job opportunities in town and the decreasing job opportunities in the village, as well as the striking difference of wages between what the people got in the village and that in town. The mobility of the commuting people also influenced the development in the village an addition to reducing the population density in town because the people did not stay permanently. The study was that mobile agents had better income than those who were not. The study showed that the working term, the working hours per week, and the level of education did not have  significant influence on the income. This was due the fact that most of the commuting people worked in the marginal sectors. The remmitance that the people brought from town constituted the main contribution to the life of the migrants. The remmitance was mainly spent for primary needs. Based on the research outcome, it is advisable that the transportation facilities be improved so that the commutation becomes easier since non permanent mobility of is proved to have increased the quality of their life and social environment.

Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

OpenAIRE

Xu, Rui; He, Daowei; Zhang, Yuhan; Wu, Bing; Liu, Fengyuan; Meng, Lan; Liu, Jun-Fang; Wu, Qisheng; Shi, Yi; Wang, Jinlan; Nie, Jia-Cai; Wang, Xinran; He, Lin

2014-01-01

Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and grap...

Spatiotemporal property and predictability of large-scale human mobility

Science.gov (United States)

Zhang, Hai-Tao; Zhu, Tao; Fu, Dongfei; Xu, Bowen; Han, Xiao-Pu; Chen, Duxin

2018-04-01

Spatiotemporal characteristics of human mobility emerging from complexity on individual scale have been extensively studied due to the application potential on human behavior prediction and recommendation, and control of epidemic spreading. We collect and investigate a comprehensive data set of human activities on large geographical scales, including both websites browse and mobile towers visit. Numerical results show that the degree of activity decays as a power law, indicating that human behaviors are reminiscent of scale-free random walks known as Lévy flight. More significantly, this study suggests that human activities on large geographical scales have specific non-Markovian characteristics, such as a two-segment power-law distribution of dwelling time and a high possibility for prediction. Furthermore, a scale-free featured mobility model with two essential ingredients, i.e., preferential return and exploration, and a Gaussian distribution assumption on the exploration tendency parameter is proposed, which outperforms existing human mobility models under scenarios of large geographical scales.

MSAT: A booster for land based mobile radiocommunication networks?

Science.gov (United States)

Boulay, Guy

1990-01-01

It is demonstrated that the foreseen phenomenal growth of mobilesat services will impact positively existing terrestrial mobile radio services. Mobilesat systems will not displace the existing terrestrial market in the near future, partly due to the high cost of their terminal units and associated airtime, but also due to some technical limitations, such as lack of spectrum efficiency and high susceptibility to shadowing. However, the ubiquity of mobilesat services will open new market to terrestrial radio technologies. The latter is expected to be the most economical way of extending locally mobilesat services to many users. Conversely, mobilesat systems will be used to extend the capabilities of terrestrial radio systems in areas where the former cannot be implemented cost effectively. It is believed that terrestrial mobile network operators using these service extension capabilities will have a competitive advantage over those who do not. Overall, it is expected that emerging mobilesat services, far from being a threat to terrestrial radio systems, will rather provide these with numerous opportunities of incrementing their base market.

Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method.

Science.gov (United States)

Yuan, Yongbo; Giri, Gaurav; Ayzner, Alexander L; Zoombelt, Arjan P; Mannsfeld, Stefan C B; Chen, Jihua; Nordlund, Dennis; Toney, Michael F; Huang, Jinsong; Bao, Zhenan

2014-01-01

Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43 cm(2) Vs(-1) (25 cm(2) Vs(-1) on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.

Design of radio frequency power amplifiers for cellular phones and base stations in modern mobile communication systems

OpenAIRE

Wu, Lei

2009-01-01

The mobile radio communication has begun with Guglielmo Marconi's and Alexander Popov's experiments with ship-to-shore communication in the 1890's. Land mobile radio telephone systems have been used since the Detroit City Police Department installed the first wireless communication system in 1921. Since that time, radio systems have become more and more important for both voice and data communication. The modern mobile communication systems are mainly designed in high frequency ranges due...

Patterning of high mobility electron gases at complex oxide interfaces

DEFF Research Database (Denmark)

Trier, Felix; Prawiroatmodjo, G. E. D. K.; von Soosten, Merlin

2015-01-01

Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects...... of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually...... where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching...

High-precision high-sensitivity clock recovery circuit for a mobile payment application

International Nuclear Information System (INIS)

Sun Lichong; Yan Na; Min Hao; Ren Wenliang

2011-01-01

This paper presents a fully integrated carrier clock recovery circuit for a mobile payment application. The architecture is based on a sampling-detection module and a charge pump phase locked loop. Compared with clock recovery in conventional 13.56 MHz transponders, this circuit can recover a high-precision consecutive carrier clock from the on/off keying (OOK) signal sent by interrogators. Fabricated by a SMIC 0.18-μm EEPROM CMOS process, this chip works from a single power supply as low as 1.5 V Measurement results show that this circuit provides 0.34% frequency deviation and 8 mV sensitivity. (semiconductor integrated circuits)

Analysis of Brain Tumors Due to the Usage of Mobile Phones

OpenAIRE

SOOBIA SAEED; ASADULLAH SHAIKH; SHABAZ AHMED NOOR

2017-01-01

The impact of cellular phone radiation on human health is the subject of current mindfulness and is an outcome of the huge increase in phone usage throughout the world. Phones use electromagnetic radiation in the microwave range. The issue is associated with wireless use for 50 minutes and above. The excessive use of mobile phone may cause brain tumors. Nowadays the most commonly developed brain tumor type is GBM (Glioblastoma) in multiform and Malignant Astrocytoma. In this paper, we focus ...

Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

International Nuclear Information System (INIS)

Sielski, Jan; Jeszka, Jeremiasz K.

2012-01-01

The development of new technology in the electronics industry requires new dielectric materials. It is also important to understand the charge-carrier transport mechanism in these materials. We examined the hole drift mobility in amorphous SiC dielectric thin films using the time-of-flight (TOF) method. Charge carriers were generated using an electron gun. The generated holes gave a dispersive TOF signal and the mobility was low. For electric field strengths above 4 x 10 5 V cm -1 the drift mobility shows a very strong dependence on the electric field and a weak temperature dependence (transport of ''high-energy'' charge carriers). At lower electric fields and for thermalized charge carriers the mobility is practically field independent and thermally activated. The observed phenomenon was attributed to the changes in the effective energy of the generated carriers moving in the high electric fields and consequently in the density of localized states taking part in the transport. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High mobility AlGaN/GaN devices for β{sup −}-dosimetry

Energy Technology Data Exchange (ETDEWEB)

Schmid, Martin; Howgate, John; Ruehm, Werner [Helmholtz Zentrum München, Ingolstädter Landstraße 1, 85764 Neuherberg (Germany); Thalhammer, Stefan, E-mail: stefan.thalhammer@physik.uni-augsburg.de [Universität Augsburg, Universitätsstraße 1, 86159 Augsburg (Germany)

2016-05-21

There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β{sup −}-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β{sup −}-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β{sup −}-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β{sup −}-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

The 2007 click it or ticket high-visibility seat belt mobilization : traffic tech.

Science.gov (United States)

2010-09-01

In May 2007 the National Highway Traffic Safety Administration : sponsored the fifth national Click It or Ticket (CIOT) : high-visibility seat belt enforcement mobilization, which followed : the CIOT program model of earned and paid media : publicizi...

High performance germanium MOSFETs

International Nuclear Information System (INIS)

Saraswat, Krishna; Chui, Chi On; Krishnamohan, Tejas; Kim, Donghyun; Nayfeh, Ammar; Pethe, Abhijit

2006-01-01

Ge is a very promising material as future channel materials for nanoscale MOSFETs due to its high mobility and thus a higher source injection velocity, which translates into higher drive current and smaller gate delay. However, for Ge to become main-stream, surface passivation and heterogeneous integration of crystalline Ge layers on Si must be achieved. We have demonstrated growth of fully relaxed smooth single crystal Ge layers on Si using a novel multi-step growth and hydrogen anneal process without any graded buffer SiGe layer. Surface passivation of Ge has been achieved with its native oxynitride (GeO x N y ) and high-permittivity (high-k) metal oxides of Al, Zr and Hf. High mobility MOSFETs have been demonstrated in bulk Ge with high-k gate dielectrics and metal gates. However, due to their smaller bandgap and higher dielectric constant, most high mobility materials suffer from large band-to-band tunneling (BTBT) leakage currents and worse short channel effects. We present novel, Si and Ge based heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining high channel mobility, making them suitable for scaling into the sub-15 nm regime. Through full band Monte-Carlo, Poisson-Schrodinger and detailed BTBT simulations we show a dramatic reduction in BTBT and excellent electrostatic control of the channel, while maintaining very high drive currents in these highly scaled heterostructure DGFETs. Heterostructure MOSFETs with varying strained-Ge or SiGe thickness, Si cap thickness and Ge percentage were fabricated on bulk Si and SOI substrates. The ultra-thin (∼2 nm) strained-Ge channel heterostructure MOSFETs exhibited >4x mobility enhancements over bulk Si devices and >10x BTBT reduction over surface channel strained SiGe devices

High performance germanium MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Saraswat, Krishna [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)]. E-mail: saraswat@stanford.edu; Chui, Chi On [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Krishnamohan, Tejas [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Kim, Donghyun [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Nayfeh, Ammar [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Pethe, Abhijit [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)

2006-12-15

Ge is a very promising material as future channel materials for nanoscale MOSFETs due to its high mobility and thus a higher source injection velocity, which translates into higher drive current and smaller gate delay. However, for Ge to become main-stream, surface passivation and heterogeneous integration of crystalline Ge layers on Si must be achieved. We have demonstrated growth of fully relaxed smooth single crystal Ge layers on Si using a novel multi-step growth and hydrogen anneal process without any graded buffer SiGe layer. Surface passivation of Ge has been achieved with its native oxynitride (GeO {sub x}N {sub y} ) and high-permittivity (high-k) metal oxides of Al, Zr and Hf. High mobility MOSFETs have been demonstrated in bulk Ge with high-k gate dielectrics and metal gates. However, due to their smaller bandgap and higher dielectric constant, most high mobility materials suffer from large band-to-band tunneling (BTBT) leakage currents and worse short channel effects. We present novel, Si and Ge based heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining high channel mobility, making them suitable for scaling into the sub-15 nm regime. Through full band Monte-Carlo, Poisson-Schrodinger and detailed BTBT simulations we show a dramatic reduction in BTBT and excellent electrostatic control of the channel, while maintaining very high drive currents in these highly scaled heterostructure DGFETs. Heterostructure MOSFETs with varying strained-Ge or SiGe thickness, Si cap thickness and Ge percentage were fabricated on bulk Si and SOI substrates. The ultra-thin ({approx}2 nm) strained-Ge channel heterostructure MOSFETs exhibited >4x mobility enhancements over bulk Si devices and >10x BTBT reduction over surface channel strained SiGe devices.

Mobile phone and my health

International Nuclear Information System (INIS)

Surducan, Aneta; Dabala, Dana; Neamtu, Camelia; Surducan, Vasile; Surducan, Emanoil

2013-01-01

The interaction of the microwave radiation emitted by mobile phones with the user's body is analyzed from the International Commission on Non-Ionizing Radiation Protection (ICNIRP) recommendations perspective as a correlation between the specific absorption ratio (SAR) of the mobile phone and the call duration. The relative position of the cell phone to the user's body, the dielectric properties of the exposed body parts, the SAR value and the call duration are considered in the local body temperature rise due to the microwave heating effect. The recommended local temperature rise limit in the human body is evaluated according to standards. The aim of this study is to disseminate information to young people, especially high school students, about the microwave thermal effects on the human body, to make them aware of the environmental electromagnetic pollution and to offer them a simple method of biological self protection

Mobile phone and my health

Energy Technology Data Exchange (ETDEWEB)

Surducan, Aneta [Nicolae Balcescu High School, 6 Constanta St., 400158 Cluj-Napoca (Romania); Dabala, Dana [National Railways Medical Clinic,, Occupational Medicine Department, 16-20 Republicii St., 400015 Cluj-Napoca (Romania); Neamtu, Camelia, E-mail: emanoil.surducan@itim-cj.ro; Surducan, Vasile, E-mail: emanoil.surducan@itim-cj.ro; Surducan, Emanoil, E-mail: emanoil.surducan@itim-cj.ro [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath St., 400293 Cluj-Napoca (Romania)

2013-11-13

The interaction of the microwave radiation emitted by mobile phones with the user's body is analyzed from the International Commission on Non-Ionizing Radiation Protection (ICNIRP) recommendations perspective as a correlation between the specific absorption ratio (SAR) of the mobile phone and the call duration. The relative position of the cell phone to the user's body, the dielectric properties of the exposed body parts, the SAR value and the call duration are considered in the local body temperature rise due to the microwave heating effect. The recommended local temperature rise limit in the human body is evaluated according to standards. The aim of this study is to disseminate information to young people, especially high school students, about the microwave thermal effects on the human body, to make them aware of the environmental electromagnetic pollution and to offer them a simple method of biological self protection.

Mobile phone and my health

Science.gov (United States)

Surducan, Aneta; Dabala, Dana; Neamtu, Camelia; Surducan, Vasile; Surducan, Emanoil

2013-11-01

The interaction of the microwave radiation emitted by mobile phones with the user's body is analyzed from the International Commission on Non-Ionizing Radiation Protection (ICNIRP) recommendations perspective as a correlation between the specific absorption ratio (SAR) of the mobile phone and the call duration. The relative position of the cell phone to the user's body, the dielectric properties of the exposed body parts, the SAR value and the call duration are considered in the local body temperature rise due to the microwave heating effect. The recommended local temperature rise limit in the human body is evaluated according to standards. The aim of this study is to disseminate information to young people, especially high school students, about the microwave thermal effects on the human body, to make them aware of the environmental electromagnetic pollution and to offer them a simple method of biological self protection.

CityMobil : Human factor issues regarding highly automated vehicles on eLane

NARCIS (Netherlands)

Toffetti, A.; Wilschut, E.S.; Martens, M.H.; Schieben, A.; Rambaldini, A.; Merat, N.; Flemisch, F.

2009-01-01

There are several human factor concerns with highly autonomous or semiautonomous driving, such as transition of control, loss of skill, and dealing with automated system errors. Four CityMobil experiments studied the eLane concept for dual-mode cars, and the results of one are described. The open

High School Pupils' Attitudes and Self-Efficacy of Using Mobile Devices

Science.gov (United States)

Nikolopoulou, Kleopatra; Gialamas, Vasilis

2017-01-01

This paper regards a study aiming to investigate junior high school pupils' attitudes and self-efficacy of using mobile devices. A 25-item questionnaire was administered to 260 pupils aged 12-15 years old, in Greece. Pupils' attitudes were positive, and four factors were extracted, "perceived usefulness", "affection",…

Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor.

Science.gov (United States)

Hung, Wen-Yi; Chiang, Pin-Yi; Lin, Shih-Wei; Tang, Wei-Chieh; Chen, Yi-Ting; Liu, Shih-Hung; Chou, Pi-Tai; Hung, Yi-Tzu; Wong, Ken-Tsung

2016-02-01

A star-shaped 1,3,5-triazine/cyano hybrid molecule CN-T2T was designed and synthesized as a new electron acceptor for efficient exciplex-based OLED emitter by mixing with a suitable electron donor (Tris-PCz). The CN-T2T/Tris-PCz exciplex emission shows a high ΦPL of 0.53 and a small ΔET-S = -0.59 kcal/mol, affording intrinsically efficient fluorescence and highly efficient exciton up-conversion. The large energy level offsets between Tris-PCz and CN-T2T and the balanced hole and electron mobility of Tris-PCz and CN-T2T, respectively, ensuring sufficient carrier density accumulated in the interface for efficient generation of exciplex excitons. Employing a facile device structure composed as ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm), in which the electron-hole capture is efficient without additional carrier injection barrier from donor (or acceptor) molecule and carriers mobilities are balanced in the emitting layer, leads to a highly efficient green exciplex OLED with external quantum efficiency (EQE) of 11.9%. The obtained EQE is 18% higher than that of a comparison device using an exciplex exhibiting a comparable ΦPL (0.50), in which TCTA shows similar energy levels but higher hole mobility as compared with Tris-PCz. Our results clearly indicate the significance of mobility balance in governing the efficiency of exciplex-based OLED. Exploiting the Tris-PCz:CN-T2T exciplex as the host, we further demonstrated highly efficient yellow and red fluorescent OLEDs by doping 1 wt % Rubrene and DCJTB as emitter, achieving high EQE of 6.9 and 9.7%, respectively.

Mobile relays for enhanced broadband connectivity in high speed train systems

KAUST Repository

Yaacoub, Elias E.

2014-09-01

With the introduction of wireless modems and smart phones, the passenger transport industry is witnessing a high demand to ensure not only the safety of the trains, but also to provide users with Internet access all the time inside the train. When the Mobile Terminal (MT) communicates directly with the Base Station (BS), it will experience a severe degradation in the Quality of Service due to the path loss and shadowing effects as the wireless signal is traveling through the train. In this paper, we study the performance in the case of relays placed on top of each train car. In the proposed approach, these relays communicate with the cellular BS on one hand, and with the MTs inside the train cars on the other hand, using the Long Term Evolution (LTE) cellular technology. A low complexity heuristic LTE radio resource management approach is proposed and compared to the Hungarian algorithm, both in the presence and absence of the relays. The presence of the relays is shown to lead to significant enhancements in the effective data rates of the MTs. In addition, the proposed resource management approach is shown to reach a performance close to the optimal Hungarian algorithm. © 2014 Elsevier B.V.

Atom interferometric gravity gradiometer: Disturbance compensation and mobile gradiometry

Science.gov (United States)

Mahadeswaraswamy, Chetan

First ever mobile gravity gradient measurement based on Atom Interferometric sensors has been demonstrated. Mobile gravity gradiometers play a significant role in high accuracy inertial navigation systems in order to distinguish inertial acceleration and acceleration due to gravity. The gravity gradiometer consists of two atom interferometric accelerometers. In each of the accelerometer an ensemble of laser cooled Cesium atoms is dropped and using counter propagating Raman pulses (pi/2-pi-pi/2) the ensemble is split into two states for carrying out atom interferometry. The interferometer phase is proportional to the specific force experienced by the atoms which is a combination of inertial acceleration and acceleration due to gravity. The difference in phase between the two atom interferometric sensors is proportional to gravity gradient if the platform does not undergo any rotational motion. However, any rotational motion of the platform induces spurious gravity gradient measurements. This apparent gravity gradient due to platform rotation is considerably different for an atom interferometric sensor compared to a conventional force rebalance type sensor. The atoms are in free fall and are not influenced by the motion of the case except at the instants of Raman pulses. A model for determining apparent gravity gradient due to rotation of platform was developed and experimentally verified for different frequencies. This transfer function measurement also lead to the development of a new technique for aligning the Raman laser beams with the atom clusters to within 20 mu rad. This gravity gradiometer is situated in a truck for the purpose of undertaking mobile surveys. A disturbance compensation system was designed and built in order to compensate for the rotational disturbances experienced on the floor of a truck. An electric drive system was also designed specifically to be able to move the truck in a uniform motion at very low speeds of about 1cm/s. A 250 x10-9 s-2

Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

Science.gov (United States)

Ding, Xiangzhen; Yang, Shuai; Miao, Bin; Gu, Le; Gu, Zhiqi; Zhang, Jian; Wu, Baojun; Wang, Hong; Wu, Dongmin; Li, Jiadong

2018-04-18

A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

Experiences from Implementing a Mobile Multiplayer Real-Time Game for Wireless Networks with High Latency

Directory of Open Access Journals (Sweden)

Alf Inge Wang

2009-01-01

Full Text Available This paper describes results and experiences from designing, implementing, and testing a multiplayer real-time game over mobile networks with high latency. The paper reports on network latency and bandwidth measurements from playing the game live over GPRS, EDGE, UMTS, and WLAN using the TCP and the UDP protocols. These measurements describe the practical constraints of various wireless networks and protocols when used for mobile multiplayer game purposes. Further, the paper reports on experiences from implementing various approaches to minimize issues related to high latency. Specifically, the paper focuses on a discussion about how much of the game should run locally on the client versus on the server to minimize the load on the mobile device and obtain sufficient consistency in the game. The game was designed to reveal all kinds of implementation issues of mobile network multiplayer games. The goal of the game is for a player to push other players around and into traps where they loose their lives. The game relies heavily on collision detection between the players and game objects. The paper presents experiences from experimenting with various approaches that can be used to handle such collisions, and highlights the advantages and disadvantages of the various approaches.

MOFs for storage of natural gas in mobile applications

Energy Technology Data Exchange (ETDEWEB)

Marx, S.; Arnold, L.; Gaab, M.; Maurer, S.; Weickert, M.; Mueller, U. [BASF SE, Ludwigshafen (Germany); Gummaraju, R.; SantaMaria, M.; Wilson, K.; Garbotz, C.; Lynch, J. [BASF Corporation, Iselin, NJ (United States)

2013-11-01

Metal-organic frameworks (MOFs) are supposed to have high potential in gas storage, particular in the storage of natural gas (NG) for mobile applications. Due to the shale gas exploration and the cost advantage of natural gas on the North American market as well as the environmental benign behavior upon combustion, storage of gaseous fuels will become more important for future mobility. The main challenge with all gaseous fuels is the limited range of the fuel stored on board of a vehicle. Instead of increasing the pressure in the tank, which would lead to heavy tanks and high compression costs, MOFs might help to improve the energy density of the gas stored in a tank resulting in an increased driving distance or reduced space needed for the gas tanks. (orig.)

Mobile systems development

DEFF Research Database (Denmark)

Pedersen, Ole; Kristiansen, Martin Lund; Kammersgaard, Marc N.

2007-01-01

in XP. In general, we find XP well-suited for mobile systems development projects. However, based on our experiences and an analytical comparison we propose the following modifications to XP: Make an essential design to avoid the worst time waste during refactoring. For faster development, reuse code......Development of mobile software is Surrounded by much uncertainty. Immature software platforms on mobile clients, a highly competitive market calling for innovation, efficiency and effectiveness in the development life cycle, and lacking end-user adoption are just some of the realities facing...... development teams in the mobile software industry. By taking a process view on development of mobile systems we seek to explore the strengths and limitations of eXtreme Programming (XP) in the context of mobile software development. Following an experimental approach a mobile systems development project...

Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high-electron-mobility transistor

International Nuclear Information System (INIS)

Quan Si; Hao Yue; Ma Xiao-Hua; Yu Hui-You

2011-01-01

AlGaN/GaN depletion-mode high-electron-mobility transistor (D-HEMT) and fluorine (F) plasma treated enhancement-mode high-electron-mobility transistor (E-HEMT) are exposed to 60 Co gamma radiation with a dose of 1.6 Mrad (Si). No degradation is observed in the performance of D-HEMT. However, the maximum transconductance of E-HEMT is increased after radiation. The 2DEG density and the mobility are calculated from the results of capacitance-voltage measurement. The electron mobility decreases after fluorine plasma treatment and recovers after radiation. Conductance measurements in a frequency range from 10 kHz to 1 MHz are used to characterize the trapping effects in the devices. A new type of trap is observed in the F plasma treated E-HEMT compared with the D-HEMT, but the density of the trap decreases by radiation. Fitting of G p /ω data yields the trap densities D T = (1 − 3) × 10 12 cm −2 · eV −1 and D T = (0.2 − 0.8) × 10 12 cm −2 · eV −1 before and after radiation, respectively. The time constant is 0.5 ms-6 ms. With F plasma treatment, the trap is introduced by etch damage and degrades the electronic mobility. After 60 Co gamma radiation, the etch damage decreases and the electron mobility is improved. The gamma radiation can recover the etch damage caused by F plasma treatment. (interdisciplinary physics and related areas of science and technology)

H.264/AVC error resilience tools suitable for 3G mobile video services

Institute of Scientific and Technical Information of China (English)

LIU Lin; YE Xiu-zi; ZHANG San-yuan; ZHANG Yin

2005-01-01

The emergence of third generation mobile system (3G) makes video transmission in wireless environment possible,and the latest 3GPP/3GPP2 standards require 3G terminals support H.264/AVC. Due to high packet loss rate in wireless environment, error resilience for 3G terminals is necessary. Moreover, because of the hardware restrictions, 3G mobile terminals support only part of H.264/AVC error resilience tool. This paper analyzes various error resilience tools and their functions, and presents 2 error resilience strategies for 3G mobile streaming video services and mobile conversational services. Performances of the proposed error resilience strategies were tested using off-line common test conditions. Experiments showed that the proposed error resilience strategies can yield reasonably satisfactory results.

Patient-Facing Mobile Apps to Treat High-Need, High-Cost Populations: A Scoping Review.

Science.gov (United States)

Singh, Karandeep; Drouin, Kaitlin; Newmark, Lisa P; Filkins, Malina; Silvers, Elizabeth; Bain, Paul A; Zulman, Donna M; Lee, Jae-Ho; Rozenblum, Ronen; Pabo, Erika; Landman, Adam; Klinger, Elissa V; Bates, David W

2016-12-19

Self-management is essential to caring for high-need, high-cost (HNHC) populations. Advances in mobile phone technology coupled with increased availability and adoption of health-focused mobile apps have made self-management more achievable, but the extent and quality of the literature supporting their use is not well defined. The purpose of this review was to assess the breadth, quality, bias, and types of outcomes measured in the literature supporting the use of apps targeting HNHC populations. Data sources included articles in PubMed and MEDLINE (National Center for Biotechnology Information), EMBASE (Elsevier), the Cochrane Central Register of Controlled Trials (EBSCO), Web of Science (Thomson Reuters), and the NTIS (National Technical Information Service) Bibliographic Database (EBSCO) published since 2008. We selected studies involving use of patient-facing iOS or Android mobile health apps. Extraction was performed by 1 reviewer; 40 randomly selected articles were evaluated by 2 reviewers to assess agreement. Our final analysis included 175 studies. The populations most commonly targeted by apps included patients with obesity, physical handicaps, diabetes, older age, and dementia. Only 30.3% (53/175) of the apps studied in the reviewed literature were identifiable and available to the public through app stores. Many of the studies were cross-sectional analyses (42.9%, 75/175), small (median number of participants=31, interquartile range 11.0-207.2, maximum 11,690), or performed by an app's developers (61.1%, 107/175). Of the 175 studies, only 36 (20.6%, 36/175) studies evaluated a clinical outcome. Most apps described in the literature could not be located on the iOS or Android app stores, and existing research does not robustly evaluate the potential of mobile apps. Whereas apps may be useful in patients with chronic conditions, data do not support this yet. Although we had 2-3 reviewers to screen and assess abstract eligibility, only 1 reviewer abstracted

Does a Mobile Phone Depression-Screening App Motivate Mobile Phone Users With High Depressive Symptoms to Seek a Health Care Professional's Help?

Science.gov (United States)

BinDhim, Nasser F; Alanazi, Eman M; Aljadhey, Hisham; Basyouni, Mada H; Kowalski, Stefan R; Pont, Lisa G; Shaman, Ahmed M; Trevena, Lyndal; Alhawassi, Tariq M

2016-06-27

The objective of disease screening is to encourage high-risk subjects to seek health care diagnosis and treatment. Mobile phone apps can effectively screen mental health conditions, including depression. However, it is not known how effective such screening methods are in motivating users to discuss the obtained results of such apps with health care professionals. Does a mobile phone depression-screening app motivate users with high depressive symptoms to seek health care professional advice? This study aimed to address this question. This was a single-cohort, prospective, observational study of a free mobile phone depression app developed in English and released on Apple's App Store. Apple App Store users (aged 18 or above) in 5 countries, that is, Australia, Canada, New Zealand (NZ), the United Kingdom (UK), and the United States (US), were recruited directly via the app's download page. The participants then completed the Patient Health Questionnaire (PHQ-9), and their depression screening score was displayed to them. If their score was 11 or above and they had never been diagnosed with depression before, they were advised to take their results to their health care professional. They were to follow up after 1 month. A group of 2538 participants from the 5 countries completed PHQ-9 depression screening with the app. Of them, 322 participants were found to have high depressive symptoms and had never been diagnosed with depression, and received advice to discuss their results with health care professionals. About 74% of those completed the follow-up; approximately 38% of these self-reported consulting their health care professionals about their depression score. Only positive attitude toward depression as a real disease was associated with increased follow-up response rate (odds ratio (OR) 3.2, CI 1.38-8.29). A mobile phone depression-screening app motivated some users to seek a depression diagnosis. However, further study should investigate how other app users use

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

International Nuclear Information System (INIS)

Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

2008-01-01

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

2008-06-21

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

From mobile ADCP to high-resolution SSC: a cross-section calibration tool

Science.gov (United States)

Boldt, Justin A.

2015-01-01

Sediment is a major cause of stream impairment, and improved sediment monitoring is a crucial need. Point samples of suspended-sediment concentration (SSC) are often not enough to provide an understanding to answer critical questions in a changing environment. As technology has improved, there now exists the opportunity to obtain discrete measurements of SSC and flux while providing a spatial scale unmatched by any other device. Acoustic instruments are ubiquitous in the U.S. Geological Survey (USGS) for making streamflow measurements but when calibrated with physical sediment samples, they may be used for sediment measurements as well. The acoustic backscatter measured by an acoustic Doppler current profiler (ADCP) has long been known to correlate well with suspended sediment, but until recently, it has mainly been qualitative in nature. This new method using acoustic surrogates has great potential to leverage the routine data collection to provide calibrated, quantitative measures of SSC which hold promise to be more accurate, complete, and cost efficient than other methods. This extended abstract presents a method for the measurement of high spatial and temporal resolution SSC using a down-looking, mobile ADCP from discrete cross-sections. The high-resolution scales of sediment data are a primary advantage and a vast improvement over other discrete methods for measuring SSC. Although acoustic surrogate technology using continuous, fixed-deployment ADCPs (side-looking) is proven, the same methods cannot be used with down-looking ADCPs due to the fact that the SSC and particle-size distribution variation in the vertical profile violates theory and complicates assumptions. A software tool was developed to assist in using acoustic backscatter from a down-looking, mobile ADCP as a surrogate for SSC. This tool has a simple graphical user interface that loads the data, assists in the calibration procedure, and provides data visualization and output options. This tool

Considering the Geographic Dispersion of Homeless and Highly Mobile Students and Families

Science.gov (United States)

Miller, Peter M.; Bourgeois, Alexis K.

2013-01-01

This article addresses school and community-level issues associated with the expanding crisis of student homelessness in the United States. We note that while an increased geographic dispersion of homeless and highly mobile (HHM) families is largely attributed to the widespread effects of the economic recession, it is also furthered by shifting…

Effects of inositol trisphosphate on calcium mobilization in high-voltage and saponin-permeabilized platelets

International Nuclear Information System (INIS)

Gear, A.R.L.; Hallam, T.J.

1986-01-01

Interest in phosphatidylinositol metabolism has been greatly stimulated by the findings that diglyceride and inositol phosphates may serve as second messengers in modulating cellular function. Formation of 1,4,5-inositol trisphosphate (IP 3 ), in particular, has been linked to mobilization of intracellular calcium in a number of cell types. The authors have examined the ability of IP 3 to mobilize calcium in human platelets permeabilized by either saponin or high-voltage discharge. Saponin at 15 μg/ml effectively permeabilized platelets to exogenous inositol 1,4,5-trisphosphate which released bound [ 45 Ca] within 1 min and with a Ka of 7.4 +/- 4.1 μM. A small (25%) azide-sensitive pool was also responsive to inositol trisphosphate. The calcium pools were completely discharged by A-23187 and the ATP-dependent uptake was prevented by dinitrophenol. In contrast to the result with saponin, platelets accessed by high-voltage discharge were insensitive to challenge by inositol 1,4,5-trisphosphate. The data suggest that while inositol 1,4,5-trisphosphate can rapidly mobilize platelet calcium, the ability to demonstrate this depends on the method of permeabilization

Using Mobile Communication Technology in High School Education: Motivation, Pressure, and Learning Performance

Science.gov (United States)

Rau, Pei-Luen Patrick; Gao, Qin; Wu, Li-Mei

2008-01-01

Motivation and pressure are considered two factors impacting vocational senior high school student learning. New communication technology, especially mobile communication technology, is supposed to be effective in encouraging interaction between the student and the instructor and improving learning efficiency. Social presence and information…

From computational discovery to experimental characterization of a high hole mobility organic crystal.

KAUST Repository

Sokolov, Anatoliy N; Atahan-Evrenk, Sule; Mondal, Rajib; Akkerman, Hylke B; Sá nchez-Carrera, Roel S; Granados-Focil, Sergio; Schrier, Joshua; Mannsfeld, Stefan C B; Zoombelt, Arjan P; Bao, Zhenan; Aspuru-Guzik, Alá n

2011-01-01

can be hindered by synthetic and characterization difficulties. Here we show that in silico screening of novel derivatives of the dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene semiconductor with high hole mobility and air stability can lead

N-polar GaN epitaxy and high electron mobility transistors

International Nuclear Information System (INIS)

Wong, Man Hoi; Keller, Stacia; Dasgupta, Nidhi Sansaptak; Denninghoff, Daniel J; Kolluri, Seshadri; Brown, David F; Lu, Jing; Fichtenbaum, Nicholas A; Ahmadi, Elaheh; DenBaars, Steven P; Speck, James S; Mishra, Umesh K; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth

2013-01-01

This paper reviews the progress of N-polar (0001-bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized. (invited review)

A geostationary satellite system for mobile multimedia applications using portable, aeronautical and mobile terminals

Science.gov (United States)

Losquadro, G.; Luglio, M.; Vatalaro, F.

1997-01-01

A geostationary satellite system for mobile multimedia services via portable, aeronautical and mobile terminals was developed within the framework of the Advanced Communications Technology Service (ACTS) programs. The architecture of the system developed under the 'satellite extremely high frequency communications for multimedia mobile services (SECOMS)/ACTS broadband aeronautical terminal experiment' (ABATE) project is presented. The system will be composed of a Ka band system component, and an extremely high frequency band component. The major characteristics of the space segment, the ground control station and the portable, aeronautical and mobile user terminals are outlined.

Individual mobility: issues and assessment

Energy Technology Data Exchange (ETDEWEB)

Roos, D [Massachusetts Inst. of Technology, Center for Technology, Policy and Industrial Development, Cambridge, MA (United States)

1996-11-01

Problems relating to mobility will intensify in developing countries due to explosive growth in motorization. In the Western countries, individual travel needs will change as a result of demographics (e.g. an increase in the elderly population, working women and single person households), and new information and communication technology. Increased congestion and global warming are the principal concerns that impact mobility. To respond to these concerns, significant mobility improvements can be realized by replicating successful mobility strategies that have been implemented in some cities throughout the world. However, a more fundamental reappraisal will be necessary that considers mobility in an overall sustainability context. Intelligent transportation systems (ITS) may provide a framework for a new mobility infrastructure that enables implementation of a dynamic transportation system. Such a system can adapt on a real-time basis to customer needs and social concerns. ITS enables pricing and control strategies to be more easily utilized on an episodic basis. Development of a rational approach to sustainable mobility requires the public and private sectors as well as various stakeholders to develop a shared vision of the future, since mobility goes beyond national and competitive interests. (author) 3 figs.

Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

International Nuclear Information System (INIS)

Xi Xiao-Wen; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Fan Qing-Yang; Shi Chun-Lei

2016-01-01

An electromagnetic pulse (EMP)-induced damage model based on the internal damage mechanism of the GaAs pseudomorphic high electron mobility transistor (PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level. (paper)

AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.

Science.gov (United States)

Lee, Hee Ho; Bae, Myunghan; Jo, Sung-Hyun; Shin, Jang-Kyoo; Son, Dong Hyeok; Won, Chul-Ho; Jeong, Hyun-Min; Lee, Jung-Hee; Kang, Shin-Won

2015-07-28

In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

Clinical Value of High Mobility Group Box 1 and the Receptor for Advanced Glycation End-products in Head and Neck Cancer: A Systematic Review

Directory of Open Access Journals (Sweden)

Nguyen, Austin

2016-04-01

Full Text Available Introduction High mobility group box 1 is a versatile protein involved in gene transcription, extracellular signaling, and response to inflammation. Extracellularly, high mobility group box 1 binds to several receptors, notably the receptor for advanced glycation end-products. Expression of high mobility group box 1 and the receptor for advanced glycation end-products has been described in many cancers. Objectives To systematically review the available literature using PubMed and Web of Science to evaluate the clinical value of high mobility group box 1 and the receptor for advanced glycation end-products in head and neck squamous cell carcinomas. Data synthesis A total of eleven studies were included in this review. High mobility group box 1 overexpression is associated with poor prognosis and many clinical and pathological characteristics of head and neck squamous cell carcinomas patients. Additionally, the receptor for advanced glycation end-products demonstrates potential value as a clinical indicator of tumor angiogenesis and advanced staging. In diagnosis, high mobility group box 1 demonstrates low sensitivity. Conclusion High mobility group box 1 and the receptor for advanced glycation end-products are associated with clinical and pathological characteristics of head and neck squamous cell carcinomas. Further investigation of the prognostic and diagnostic value of these molecules is warranted.

A New Mobile Learning Adaptation Model

OpenAIRE

Mohamd Hassan Hassan; Jehad Al-Sadi

2009-01-01

This paper introduces a new model for m- Learning context adaptation due to the need of utilizing mobile technology in education. Mobile learning; m-Learning for short; in considered to be one of the hottest topics in the educational community, many researches had been done to conceptualize this new form of learning. We are presenting a promising design for a model to adapt the learning content in mobile learning applications in order to match the learner context, preferences and the educatio...

Whirlpool routing for mobility

KAUST Repository

Lee, Jung Woo

2010-01-01

We present the Whirlpool Routing Protocol (WARP), which efficiently routes data to a node moving within a static mesh. The key insight in WARP\\'s design is that data traffic can use an existing routing gradient to efficiently probe the topology, repair the routing gradient, and communicate these repairs to nearby nodes. Using simulation, controlled testbeds, and real mobility experiments, we find that using the data plane for topology maintenance is highly effective due to the incremental nature of mobility updates. WARP leverages the fact that converging flows at a destination make the destination have the region of highest traffic. We provide a theoretical basis for WARP\\'s behavior, defining an "update area" in which the topology must adjust when a destination moves. As long as packets arrive at a destination before it moves outside of the update area, WARP can repair the topology using the data plane. Compared to existing protocols, such as DYMO and HYPER, WARP\\'s packet drop rate is up to 90% lower while sending up to 90% fewer packets.

Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

Science.gov (United States)

Warwick, C. N.; Venkateshvaran, D.; Sirringhaus, H.

2015-09-01

We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10-DNTT). The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014)] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

CERN Document Server

Franco, Jacopo; Groeseneken, Guido

2014-01-01

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and pr...

A survey study of the association between mobile phone use and daytime sleepiness in California high school students.

Science.gov (United States)

Nathan, Nila; Zeitzer, Jamie

2013-09-12

Mobile phone use is near ubiquitous in teenagers. Paralleling the rise in mobile phone use is an equally rapid decline in the amount of time teenagers are spending asleep at night. Prior research indicates that there might be a relationship between daytime sleepiness and nocturnal mobile phone use in teenagers in a variety of countries. As such, the aim of this study was to see if there was an association between mobile phone use, especially at night, and sleepiness in a group of U.S. teenagers. A questionnaire containing an Epworth Sleepiness Scale (ESS) modified for use in teens and questions about qualitative and quantitative use of the mobile phone was completed by students attending Mountain View High School in Mountain View, California (n = 211). Multivariate regression analysis indicated that ESS score was significantly associated with being female, feeling a need to be accessible by mobile phone all of the time, and a past attempt to reduce mobile phone use. The number of daily texts or phone calls was not directly associated with ESS. Those individuals who felt they needed to be accessible and those who had attempted to reduce mobile phone use were also ones who stayed up later to use the mobile phone and were awakened more often at night by the mobile phone. The relationship between daytime sleepiness and mobile phone use was not directly related to the volume of texting but may be related to the temporal pattern of mobile phone use.

Approaching the Hole Mobility Limit of GaSb Nanowires.

Science.gov (United States)

Yang, Zai-xing; Yip, SenPo; Li, Dapan; Han, Ning; Dong, Guofa; Liang, Xiaoguang; Shu, Lei; Hung, Tak Fu; Mo, Xiaoliang; Ho, Johnny C

2015-09-22

In recent years, high-mobility GaSb nanowires have received tremendous attention for high-performance p-type transistors; however, due to the difficulty in achieving thin and uniform nanowires (NWs), there is limited report until now addressing their diameter-dependent properties and their hole mobility limit in this important one-dimensional material system, where all these are essential information for the deployment of GaSb NWs in various applications. Here, by employing the newly developed surfactant-assisted chemical vapor deposition, high-quality and uniform GaSb NWs with controllable diameters, spanning from 16 to 70 nm, are successfully prepared, enabling the direct assessment of their growth orientation and hole mobility as a function of diameter while elucidating the role of sulfur surfactant and the interplay between surface and interface energies of NWs on their electrical properties. The sulfur passivation is found to efficiently stabilize the high-energy NW sidewalls of (111) and (311) in order to yield the thin NWs (i.e., 40 nm in diameters) would grow along the most energy-favorable close-packed planes with the orientation of ⟨111⟩, supported by the approximate atomic models. Importantly, through the reliable control of sulfur passivation, growth orientation and surface roughness, GaSb NWs with the peak hole mobility of ∼400 cm(2)V s(-1) for the diameter of 48 nm, approaching the theoretical limit under the hole concentration of ∼2.2 × 10(18) cm(-3), can be achieved for the first time. All these indicate their promising potency for utilizations in different technological domains.

Green mobile networks a networking perspective

CERN Document Server

Ansari, Nirwan

2016-01-01

Combines the hot topics of energy efficiency and next generation mobile networking, examining techniques and solutions. Green communications is a very hot topic. Ever increasing mobile network bandwidth rates significantly impacts on operating costs due to aggregate network energy consumption. As such, design on 4G networks and beyond has increasingly started to focus on 'energy efficiency' or so-called 'green' networks. Many techniques and solutions have been proposed to enhance the energy efficiency of mobile networks, yet no book has provided an in-depth analysis of the energy consumption issues in mobile networks nor offers detailed theories, tools and solutions for solving the energy efficiency problems.

MOBILE LEARNING – AN ALTERNATIVE APPROACH IN HIGHER EDUCATION

OpenAIRE

Khalil Alsaadat

2017-01-01

Due to the swift proliferation of mobile technology, the use of mobile devices, like notebook computers, and mobile phones, as learning tools has offered people the flexibility and convenience to acquire new knowledge anytime and anywhere. In light of this, growing attention has been paid to the critical roles of perceived flexibility advantages in mobile and online learning (Huang et al, 2014). And because of the increasing use of mobile technologies in society and by the younger generation,...

The Sustainable Interventions for Mobile Phone′s Hazards

OpenAIRE

Senthil MV; Sakthi MV

2015-01-01

Mobile phones are universally popular due to its convenience. Mobile phones solve problems and offer new channels of communication and just by using a device small enough to fit into one hand. On the other hand, mobile phones are harmful to the environment and the society which makes health problems, pollution problems via discharge of its radiations. Mobile phones have recently fallen into the examine on their sustainability and their potential effects on the environment. This study discusse...

Mobile Phones-An asset or a liability: A study based on characterization and assessment of metals in waste mobile phone components using leaching tests.

Science.gov (United States)

Hira, Meenakshi; Yadav, Sudesh; Morthekai, P; Linda, Anurag; Kumar, Sushil; Sharma, Anupam

2018-01-15

The prolonged use of old fashioned gadgets, especially mobile phones, is declining readily with the advancement in technology which ultimately lead to generation of e-waste. The present study investigates the concentrations of nine metals (Ba, Cd, Cr, Cu, Fe, Ni, Pb, Sn, and Zn) in various components of the mobile phones using Toxicity Characteristic Leaching Procedure (TCLP), Waste Extraction Test (WET) and Synthetic Precipitation Leaching Procedure (SPLP). The results were compared with the threshold limits for hazardous waste defined by the California Department of Toxic Substances Control (CDTSC) and United States Environmental Protection Agency (USEPA). The average concentrations of metals were found high in PWBs. WET was found relatively aggressive as compared to TCLP and SPLP. Redundancy analysis (RDA) suggests that part of mobile, extraction test, manufacturer, mobile model and year of manufacturing explain 34.66% of the variance. According to the present study, waste mobile phones must be considered as hazardous due to the potential adverse impact of toxic metals on human health and environment. However, mobile phones can be an asset as systematic extraction and recycling could reduce the demand of primary metals mining and conserve the natural resources. Copyright © 2017 Elsevier B.V. All rights reserved.

Measuring ionizing radiation with a mobile device

Science.gov (United States)

Michelsburg, Matthias; Fehrenbach, Thomas; Puente León, Fernando

2012-02-01

In cases of nuclear disasters it is desirable to know one's personal exposure to radioactivity and the related health risk. Usually, Geiger-Mueller tubes are used to assess the situation. Equipping everyone with such a device in a short period of time is very expensive. We propose a method to detect ionizing radiation using the integrated camera of a mobile consumer device, e.g., a cell phone. In emergency cases, millions of existing mobile devices could then be used to monitor the exposure of its owners. In combination with internet access and GPS, measured data can be collected by a central server to get an overview of the situation. During a measurement, the CMOS sensor of a mobile device is shielded from surrounding light by an attachment in front of the lens or an internal shutter. The high-energy radiation produces free electrons on the sensor chip resulting in an image signal. By image analysis by means of the mobile device, signal components due to incident ionizing radiation are separated from the sensor noise. With radioactive sources present significant increases in detected pixels can be seen. Furthermore, the cell phone application can make a preliminary estimate on the collected dose of an individual and the associated health risks.

Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials

KAUST Repository

Nassar, Joanna M.

2014-05-01

For the last four decades, Si CMOS technology has been advancing with Moore’s law prediction, working itself down to the sub-20 nm regime. However, fundamental problems and limitations arise with the down-scaling of transistors and thus new innovations needed to be discovered in order to further improve device performance without compromising power consumption and size. Thus, a lot of studies have focused on the development of new CMOS compatible architectures as well as the discovery of new high mobility channel materials that will allow further miniaturization of CMOS transistors and improvement of device performance. Pushing the limits even further, flexible and foldable electronics seem to be the new attractive topic. By being able to make our devices flexible through a CMOS compatible process, one will be able to integrate hundreds of billions of more transistors in a small volumetric space, allowing to increase the performance and speed of our electronics all together with making things thinner, lighter, smaller and even interactive with the human skin. Thus, in this thesis, we introduce for the first time a cost-effective CMOS compatible approach to make high-k/metal gate devices on flexible Germanium (Ge) and Silicon-Germanium (SiGe) platforms. In the first part, we will look at the various approaches in the literature that has been developed to get flexible platforms, as well as we will give a brief overview about epitaxial growth of Si1-xGex films. We will also examine the electrical properties of the Si1-xGex alloys up to Ge (x=1) and discuss how strain affects the band structure diagram, and thus the mobility of the material. We will also review the material growth properties as well as the state-of-the-art results on high mobility metal-oxide semiconductor capacitors (MOSCAPs) using strained SiGe films. Then, we will introduce the flexible process that we have developed, based on a cost-effective “trench-protect-release-reuse” approach, utilizing

Millimeter Wave Hybrid Photonic Wireless Links for High-Speed Wireless Access and Mobile Fronthaul

DEFF Research Database (Denmark)

Rommel, Simon

As the introduction of the fifth generation of mobile services (5G) is set to revolutionize the way people, devices and machines connect, the changes to the underlying networks and technologies are no less drastic. The massive increase in user and data capacity, as well as the decrease in latency...... networks. In summary, the work presented in this thesis has regarded a multitude of aspects of millimeter wave hybrid photonic wireless links, expanding upon the state of the art and showing their feasibility for use in fifth generation mobile and high speed wireless access networks – hopefully bringing...

Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

2014-08-01

GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

Phosphorene: an unexplored 2D semiconductor with a high hole mobility.

Science.gov (United States)

Liu, Han; Neal, Adam T; Zhu, Zhen; Luo, Zhe; Xu, Xianfan; Tománek, David; Ye, Peide D

2014-04-22

We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31-0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm(2)/V·s, and an on/off ratio of up to 10(4). We demonstrate the possibility of phosphorene integration by constructing a 2D CMOS inverter consisting of phosphorene PMOS and MoS2 NMOS transistors.

Molecular beam epitaxy growth of In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

International Nuclear Information System (INIS)

Ihn, Soo-Ghang; Jo, Seong June; Song, Jong-In

2006-01-01

We investigated the effects of high temperature (∼700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and δ-doping layers of an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

International Nuclear Information System (INIS)

Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

2010-01-01

Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Do comprehensive schools reduce social mobility?

Science.gov (United States)

Boliver, Vikki; Swift, Adam

2011-03-01

This paper investigates the claim that the shift from a selective to a comprehensive school system had a deleterious effect on social mobility in Great Britain. Using data from the National Child Development Study, we compare the chances, for both class and income mobility, of those who attended different kinds of school. Where media attention focuses exclusively on the chances for upward mobility of those children from lowly origins who were (or would have been) judged worthy of selection into a grammar school, we offer more rounded analyses. We match respondents in a way that helps us to distinguish those inequalities in mobility chances that are due to differences between children from those due to differences between the schools they attended; we look at the effects of the school system on the mobility chances of all children, not merely those from less advantaged origins; and we compare comprehensive- and selective-system schools, not merely comprehensive and grammar schools. After matching, we find, first, that going to a grammar school rather than a comprehensive does not make low-origin children more likely to be upwardly mobile but it helps them move further if they are; second, that grammar schools do not benefit working-class children, in terms of class mobility, more than they benefit service-class children, but, in terms of income mobility, such schools benefit low-income children somewhat more than they benefit higher-income children - that benefit relating only to rather modest and limited movements within the income distribution. Finally, however, the selective system as a whole yields no mobility advantage of any kind to children from any particular origins: any assistance to low-origin children provided by grammar schools is cancelled out by the hindrance suffered by those who attended secondary moderns. Overall, our findings suggest that comprehensive schools were as good for mobility as the selective schools they replaced. © London School of

Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

Science.gov (United States)

Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

2018-01-01

Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

Directory of Open Access Journals (Sweden)

C. N. Warwick

2015-09-01

Full Text Available We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT and 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT. The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

MobileFaceNets: Efficient CNNs for Accurate Real-time Face Verification on Mobile Devices

OpenAIRE

Chen, Sheng; Liu, Yang; Gao, Xiang; Han, Zhen

2018-01-01

In this paper, we proposed a class of extremely efficient CNN models, MobileFaceNets, which use less than 1 million parameters and are specifically tailored for high-accuracy real-time face verification on mobile and embedded devices. We first make a simple analysis on the weakness of common mobile networks for face verification. The weakness has been well overcome by our specifically designed MobileFaceNets. Under the same experimental conditions, our MobileFaceNets achieve significantly sup...

Mobile School Service

Directory of Open Access Journals (Sweden)

Borislav Odadzic

2010-04-01

Full Text Available What is in common for the majority of young people? Mobile phone. In epoch of rapid development of information technologies the time came in which only few people do not have mobiles, especially among young people in high schools. Researches which we made in our school say that this percentage (rate is really high 99,23% at this moment. The educational institutions should use this opportunity. In aim to improve the success of students the mobile service is developed, which will be described in this work. This is first result which provides a cognitive tool which is supporting the independent learning by applying mobile phones with wireless communication technology to extend learning outside of the classroom in Serbia. The service was developed during times when we didn’t know anything about how much and in which way m-learning was being used in the world.

Integrating mHealth Mobile Applications to Reduce High Risk Drinking among Underage Students

Science.gov (United States)

Kazemi, Donna M.; Cochran, Allyson R.; Kelly, John F.; Cornelius, Judith B.; Belk, Catherine

2014-01-01

Objective: College students embrace mobile cell phones (MCPs) as a primary communication and entertainment device. The aim of this study was to investigate college students' perceptions toward using mHealth technology to deliver interventions to prevent high-risk drinking and associated consequences. Design/setting: Four focus group interviews…

High-Speed Mobile Communications in Hostile Environments

CERN Document Server

AUTHOR|(SzGeCERN)739920; Sierra, Rodrigo; Chapron, Frederic; CERN. Geneva. IT Department

2015-01-01

With the inexorable increase in the use of mobile devices, wireless connectivity is expected by users anywhere, anytime. In general, this requirement is addressed in office buildings or public locations through the use of Wi-Fi technology but Wi-Fi is not well adapted for use in large experiment halls and complex underground environments, especially those where radiation exposure is an issue, such as the LHC tunnel and experimental caverns. 4G/LTE technology, however, looks to be well adapted to addressing mobility needs in such areas. We report here the studies CERN has undertaken on the use of 4G/LTE in the LHC tunnel, presenting results on the data throughput that can be achieved and discussing issues such as the provision of a consistent user experience.

Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

Science.gov (United States)

Zan, Hsiao-Wen; Yeh, Chun-Cheng; Meng, Hsin-Fei; Tsai, Chuang-Chuang; Chen, Liang-Hao

2012-07-10

An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cooperative problem solving with personal mobile information tools in hospitals.

Science.gov (United States)

Buchauer, A; Werner, R; Haux, R

1998-01-01

Health-care professionals have a broad range of needs for information and cooperation while working at different points of care (e.g., outpatient departments, wards, and functional units such as operating theaters). Patient-related data and medical knowledge have to be widely available to support high-quality patient care. Furthermore, due to the increased specialization of health-care professionals, efficient collaboration is required. Personal mobile information tools have a considerable potential to realize almost ubiquitous information and collaborative support. They enable to unite the functionality of conventional tools such as paper forms, dictating machines, and pagers into one tool. Moreover, they can extend the support already provided by clinical workstations. An approach is described for the integration of mobile information tools with heterogeneous hospital information systems. This approach includes identification of functions which should be provided on mobile tools. Major functions are the presentation of medical records and reports, electronic mailing to support interpersonal communication, and the provision of editors for structured clinical documentation. To realize those functions on mobile tools, we propose a document-based client-server architecture that enables mobile information tools to interoperate with existing computer-based application systems. Open application systems and powerful, partially wireless, hospital-wide networks are the prerequisites for the introduction of mobile information tools.

Correlation ion mobility spectroscopy

Science.gov (United States)

Pfeifer, Kent B [Los Lunas, NM; Rohde, Steven B [Corrales, NM

2008-08-26

Correlation ion mobility spectrometry (CIMS) uses gating modulation and correlation signal processing to improve IMS instrument performance. Closely spaced ion peaks can be resolved by adding discriminating codes to the gate and matched filtering for the received ion current signal, thereby improving sensitivity and resolution of an ion mobility spectrometer. CIMS can be used to improve the signal-to-noise ratio even for transient chemical samples. CIMS is especially advantageous for small geometry IMS drift tubes that can otherwise have poor resolution due to their small size.

Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors

Science.gov (United States)

2017-03-01

non - ionizing proton radiation damage effects at different energy levels on a GaN-on-silicon high electron mobility transistor...DISTRIBUTION CODE 13. ABSTRACT (maximum 200 words) In this work, a physics-based simulation of non - ionizing proton radiation damage effects at different...Polarization . . . . . . . . . . . . . . 6 2.3 Non - Ionizing Radiation Damage Effects . . . . . . . . . . . . . . . 10 2.4 Non - Ionizing Radiation Damage in

Mobility and emotions

DEFF Research Database (Denmark)

Selmer, Jan; Lauring, Jakob

2014-01-01

Increasing global mobility has directed attention to the self-initiated relocation of workers from one country to another. However, not all individuals are equally suited to start up a new life in another country, and self-initiated expatriates (SIEs) could be particularly vulnerable due to havin...

Thermal decomposition of electronic wastes: Mobile phone case and other parts

International Nuclear Information System (INIS)

Molto, Julia; Egea, Silvia; Conesa, Juan Antonio; Font, Rafael

2011-01-01

Highlights: → Pyrolysis and combustion of different parts of mobile phones produce important quantities of CO and CO 2 . → Naphthalene is the most abundant PAH obtained in the thermal treatment of mobile phones. → Higher combustion temperature increases the chlorinated species evolved. - Abstract: Pyrolysis and combustion runs at 850 o C in a horizontal laboratory furnace were carried out on different parts of a mobile phone (printed circuit board, mobile case and a mixture of both materials). The analyses of the carbon oxides, light hydrocarbons, polycyclic aromatic hydrocarbons (PAHs), polychlorodibenzo-p-dioxin, polychlorodibenzofurans (PCDD/Fs), and dioxin-like PCBs are shown. Regarding semivolatile compounds, phenol, styrene, and its derivatives had the highest yields. In nearly all the runs the same PAHs were identified, naphthalene being the most common component obtained. Combustion of the printed circuit board produced the highest emission factor of PCDD/Fs, possibly due to the high copper content.

Electron mobility enhancement in (100) oxygen-inserted silicon channel

Energy Technology Data Exchange (ETDEWEB)

Xu, Nuo; King Liu, Tsu-Jae [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States); Takeuchi, Hideki; Hytha, Marek; Cody, Nyles W.; Stephenson, Robert J.; Mears, Robert J. [Mears Technologies, Inc., Wellesley Hills, Massachusetts 02481 (United States); Kwak, Byungil; Cha, Seon Yong [SK Hynix, Icheon-si, Gyeonggi-do 467-701 (Korea, Republic of)

2015-09-21

High performance improvement (+88% in peak G{sub m} and >30% in linear and saturation region drain currents) was observed for N-MOSFETs with Oxygen-Inserted (OI) Si channel. From TCAD analysis of the C-V measurement data, the improvement was confirmed to be due to electron mobility enhancement of the OI Si channel (+75% at N{sub inv} = 4.0 × 10{sup 12} cm{sup −2} and +25% at N{sub inv} = 8.0 × 10{sup 12} cm{sup −2}). Raman and high-resolution Rutherford backscattering measurements confirmed that negligible strain is induced in the OI Si layer, and hence, it cannot be used to explain the origin of mobility improvement. Poisson-Schrödinger based quantum mechanical simulation was performed, taking into account phonon, surface roughness and Coulomb scatterings. The OI layer was modeled as a “quasi barrier” region with reference to the Si conduction band edge to confine inversion electrons. Simulation explains the measured electron mobility enhancement as the confinement effect of inversion electrons while the formation of an super-steep retrograde well doping profile in the channel (as a result of dopant diffusion blocking effect accompanied by introduction of the OI layer) also contributes 50%–60% of the mobility improvement.

High-field asymmetric waveform ion mobility spectrometry for mass spectrometry-based proteomics.

Science.gov (United States)

Swearingen, Kristian E; Moritz, Robert L

2012-10-01

High-field asymmetric waveform ion mobility spectrometry (FAIMS) is an atmospheric pressure ion mobility technique that separates gas-phase ions by their behavior in strong and weak electric fields. FAIMS is easily interfaced with electrospray ionization and has been implemented as an additional separation mode between liquid chromatography (LC) and mass spectrometry (MS) in proteomic studies. FAIMS separation is orthogonal to both LC and MS and is used as a means of on-line fractionation to improve the detection of peptides in complex samples. FAIMS improves dynamic range and concomitantly the detection limits of ions by filtering out chemical noise. FAIMS can also be used to remove interfering ion species and to select peptide charge states optimal for identification by tandem MS. Here, the authors review recent developments in LC-FAIMS-MS and its application to MS-based proteomics.

A Pedagogical Framework for Mobile Learning: Categorizing Educational Applications of Mobile Technologies into Four Types

Directory of Open Access Journals (Sweden)

Yeonjeong Park

2011-02-01

Full Text Available Instructional designers and educators recognize the potential of mobile technologies as a learning tool for students and have incorporated them into the distance learning environment. However, little research has been done to categorize the numerous examples of mobile learning in the context of distance education, and few instructional design guidelines based on a solid theoretical framework for mobile learning exist. In this paper I compare mobile learning (m-learning with electronic learning (e-learning and ubiquitous learning (u-learning and describe the technological attributes and pedagogical affordances of mobile learning presented in previous studies. I modify transactional distance (TD theory and adopt it as a relevant theoretical framework for mobile learning in distance education. Furthermore, I attempt to position previous studies into four types of mobile learning: 1 high transactional distance socialized m-learning, 2 high transactional distance individualized m-learning, 3 low transactional distance socialized m-learning, and 4 low transactional distance individualized m-learning. As a result, this paper can be used by instructional designers of open and distance learning to learn about the concepts of mobile learning and how mobile technologies can be incorporated into their teaching and learning more effectively.

Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

International Nuclear Information System (INIS)

Ghosh, Krishnendu; Singisetti, Uttam

2015-01-01

N-polar GaN channel mobility is important for high frequency device applications. Here, we report theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2DEG) in N-polar GaN quantum well channels with high-k dielectrics. Rode's iterative calculation is used to predict the scattering rate and mobility. Coupling of the GaN plasmon modes with the SO modes is taken into account and dynamic screening is employed under linear polarization response. The effect of SO phonons on 2DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with HfO 2 and ZrO 2 high-k dielectrics is low and limits the total mobility. The SO scattering for SiN dielectric on GaN was found to be negligible due to its high SO phonon energy. Using Al 2 O 3 , the SO phonon scattering does not affect mobility significantly only except the case when the channel is too thin with a low 2DEG density

AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

Directory of Open Access Journals (Sweden)

Hee Ho Lee

2015-07-01

Full Text Available In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT-based biosensor for the detection of C-reactive protein (CRP using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

A High Speed Mobile Communication System implementing Bicasting Architecture on the IP Layer

OpenAIRE

Yamada, Kazuhiro

2012-01-01

Having a broadband connection on high speed rails is something that business travelers want most. Increasing number of passengers is requesting even higher access speeds. We are proposing the Media Convergence System as an ideal communication system for future high speed mobile entities. The Media Convergence System recognizes plural wireless communication media between the ground network and each train, and then traffic is load-balanced over active media which varies according to circumstanc...

Mobile ECMO - A divine technology or bridge to nowhere?

Science.gov (United States)

Merkle, Julia; Djorjevic, Ilija; Sabashnikov, Anton; Kuhn, Elmar W; Deppe, Antje-Christin; Eghbalzadeh, Kaveh; Fattulayev, Javid; Hohmann, Christopher; Zeriouh, Mohamed; Kuhn-Régnier, Ferdinand; Choi, Yeong-Hoon; Mader, Navid; Wahlers, Thorsten

2017-10-01

Extracorporeal life support emerged as a salvage option in patients with therapy-refractory severe hemodynamic or respiratory failure. However, this promising therapy option has been limited by the use of experienced teams in highly specialized tertiary-care centers. Thus, in order to provide this standard of care in local hospitals and due to increasing evidence on improved outcomes using ECMO devices and setting for patients with heart and lung failure, an increasing number of experienced ECMO centers have launched mobile ECMO retrieval services in recent years. Areas covered: This review provides a summary on the current scientific status concerning use, indications and complications of mobile ECMO devices and services. A scientific literature research was conducted in MEDLINE, Embase, Cochrane and Web of Science databases using keywords denoted. Expert commentary: Mobile ECMO devices and setting offer severely ill patients refractory to maximal conventional treatment an option of hemodynamic and/or respiratory stabilization and subsequent transportation to specialized care centers for further treatment. Compared to in-hospital ECMO support, out-of-hospital mobile ECMO implantation, transport and retrieval of patients require additional organizational, logistical and clinical efforts. This review provides a summary on the current scientific status concerning use, indications and complications of mobile ECMO services.

Interface characteristics of spin-on-dielectric SiO{sub x}-buffered passivation layers for AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of); Sheen, Mi-Hyang [Department of Materials Science Engineering, Seoul National University, 151-742 Seoul (Korea, Republic of); Kim, Sam-Dong, E-mail: samdong@dongguk.edu [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of)

2015-08-31

To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO{sub x}-buffered passivation structure compared to the conventional Si{sub 3}N{sub 4} passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si{sub 3}N{sub 4} passivation was in the range of 10{sup 12}–10{sup 13} cm{sup −2} eV{sup −1}, which is one-order higher than that of the SOD (10{sup 11}–10{sup 12} cm{sup −2} eV{sup −1}) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si{sub 3}N{sub 4} passivation. A well-resolved reduction of the electron Hall mobility of the Si{sub 3}N{sub 4} passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics.

The Impact of High-Speed Rail on Residents’ Travel Behavior and Household Mobility: A Case Study of the Beijing-Shanghai Line, China

Directory of Open Access Journals (Sweden)

Hongsheng Chen

2016-11-01

Full Text Available With the improvement of China’s high-speed rail network, there have been many economic and social benefits for local residents. Based on a questionnaire conducted in stations on the Beijing-Shanghai line, and through an analysis of high-speed rail passenger travel behavior and family relocation, we explored the social effects of high-speed rail. The study found that high-speed rail passengers are mainly young, highly educated, and have a middle to high income. However, with the popularization of high-speed rail, such differences in the social stratum of high-speed rail passengers are expected to disappear. Through an analysis of passenger travel status, we found that the areas surrounding high-speed rail stations are very accessible to the main cities, and are well connected by other public transport. With the emergence of the “high mobility era” based on the high-speed rail network, the separation of workplace and residence and the number of “double city” households are increasing, primarily in the Beijing-Tianjin and Shanghai-Nanjing (especially in Suzhou-Kunshan-Shanghai regions. In addition, high-speed rail introduces the possibility of household mobility, with 22.7% of the respondents in this study having relocated since the Beijing-Shanghai line opened. Household mobility is apparent primarily among big cities, with movement toward nearby cities. We also found that occupation, income, residence time, and schooling of children have a significant impact on households. With the improvement of high-speed rail networks, household mobility will become a common phenomenon and research on domestic mobility will continue to increase.

Composite high-pressure vessels for hydrogen storage in mobile application. Pt. 1 / Light weight composite cylinders for compressed hydrogen. Pt. 2 - custom made hydrogen storage tanks and vessels

Energy Technology Data Exchange (ETDEWEB)

Rasche, C. [MCS Cylinder Systems GmbH, Dinslaken (Germany)

2000-07-01

Recent developments on fuel cell technology demonstrated the feasibility of propelling vehicles by converting fuel directly into electricity. Fuel cells conveniently use either compressed (CGH{sub 2}) or liquid hydrogen (LH{sub 2}) or methanol as the fuel source from a tank. Mobile storage of these fuelling will become an urgent need as this technology will come into series production expected for 2010. Due to the requirements on mobile hydrogen storage and the energy losses in the hydrogen-to-application-chain, a light-weight and energetic qualities and minimise ist bulky nature. Mobile storage of hydrogen can be realised either at high pressure values (> 20 MPa) or at deep temperatures (<-253 C). CGH{sub 2}: In the last few years, the introduction of natural gas driven vehicles has seen the development of compact mobile pressurised gas tanks in principle, this storage technique is also applicable for the compressed storage of hydrogen at filling pressures of > 20 MPa. LH{sub 2} : Storing hydrogen or natural gases in general in the liquid phase is accomplished either by applying a overpressure or keeping it below the phase transition temperature at ambient pressure in super insulated devices. (orig.)

Adolescents' risk perceptions on mobile phones and their base stations, their trust to authorities and incivility in using mobile phones: a cross-sectional survey on 2240 high school students in Izmir, Turkey.

Science.gov (United States)

Hassoy, Hur; Durusoy, Raika; Karababa, Ali Osman

2013-01-25

Use of mobile phones has rapidly risen among adolescents despite a lack of scientific certainty on their health risks. Risk perception is an important determinant of behavior, and studies on adolescents' risk perceptions of mobile phones or base stations are very scarce. This study aims to evaluate high school students' risk perceptions on mobile phones and base stations, their trust to authorities, their opinions regarding incivility while using mobile phones and to assess associated factors. For this cross-sectional study, 2530 students were chosen with stratified cluster sampling among 20,493 high school students studying in Bornova district of Izmir, Turkey, among whom 2240 (88.5%) participated. Risk perceptions and opinions were questioned with a 5-point Likert scale for 24 statements grouped under four dimensions. The mean responses to the four dimensions were categorized as mobile phone, base station, trust to authority and incivility dimensions were 3.69 ± 0.89, 4.34 ± 0.78, 3.77 ± 0.93, 3.16 ± 0.93 and the prevalence of high risk perception was 65.1%, 86.7%, 66.2%, 39.7%, respectively. In the mobile phone dimension; students attending industrial technical high school had lower risk perceptions while female students, lower mothers' education groups and students not using mobile phones (OR = 2.82, 95% CI = 1.80-4.40) had higher risk perceptions. In the base station dimension girls had higher risk perceptions (OR = 1.68, 95% CI = 1.20-2.37). Girls and students attending industrial technical high school had significantly lower risk perception however 11-12th grade group perceived the risk higher (OR = 1.45 95% CI = 1.15-1.84) in the trust to authority dimension. For the incivility dimension, female students (OR = 1.44, 95% CI = 1.14-1.82), illiterate/only literate mothers (OR = 1.79, 95% CI = 1.04-2.75) and students not using mobile phones (OR = 2.50, 95% CI = 1.62-3.87) perceived higher risk. Understanding the effects of these determinants might aid in

A preliminary study on thermoluminescence of AMOLED glass from mobile phones for retrospective dosimetry

International Nuclear Information System (INIS)

Kim, Hyoungtaek; Lee, Jungil; Chang, Insu; Lee, Seung Kyu; Kim, Min Chae; Park, Sang Won; Kim, Jang-Lyul; Kim, Bong-Hwan; Yu, Hyungjoon; Kim, Ah-reum

2017-01-01

Since mobile phones are always carried by individuals, the retrospective dosimetry using thermoluminescence (TL) and optically stimulated luminescence (OSL) characteristics of elements in mobile phone is intensively developing nowadays due to its advantages over conventional biological dosimetry techniques. Using a TL and OSL method on resistors and inductors in a mobile phone, a low background dose (zero dose) about tens of mGy is acquired in previous study. Radiation workers have to wear a dosimeter to assess individual exposure during their works. This monitoring system facilitate a fast medical treatment for highly exposed workers in case of a radiation accident. In the event of large-scale radiation accidents, where most of the subjects are ordinary people, it is difficult to evaluate the individual dose due to the absence of dosimeters. A technique for dose evaluation using a radiation dependency of various materials in the absence of a dosimeter is called retrospective dosimetry.

Many Mobile Health Apps Target High-Need, High-Cost Populations, But Gaps Remain.

Science.gov (United States)

Singh, Karandeep; Drouin, Kaitlin; Newmark, Lisa P; Lee, JaeHo; Faxvaag, Arild; Rozenblum, Ronen; Pabo, Erika A; Landman, Adam; Klinger, Elissa; Bates, David W

2016-12-01

With rising smartphone ownership, mobile health applications (mHealth apps) have the potential to support high-need, high-cost populations in managing their health. While the number of available mHealth apps has grown substantially, no clear strategy has emerged on how providers should evaluate and recommend such apps to patients. Key stakeholders, including medical professional societies, insurers, and policy makers, have largely avoided formally recommending apps, which forces patients to obtain recommendations from other sources. To help stakeholders overcome barriers to reviewing and recommending apps, we evaluated 137 patient-facing mHealth apps-those intended for use by patients to manage their health-that were highly rated by consumers and recommended by experts and that targeted high-need, high-cost populations. We found that there is a wide variety of apps in the marketplace but that few apps address the needs of the patients who could benefit the most. We also found that consumers' ratings were poor indications of apps' clinical utility or usability and that most apps did not respond appropriately when a user entered potentially dangerous health information. Going forward, data privacy and security will continue to be major concerns in the dissemination of mHealth apps. Project HOPE—The People-to-People Health Foundation, Inc.

Charge fluctuations in high-electron-mobility transistors: a review

International Nuclear Information System (INIS)

Green, F.

1993-01-01

The quasi-two-dimensional carrier population, free to move within a near-perfect crystalline matrix, is the key to remarkable improvements in signal gain, current density and quiet operation. Current-fluctuation effects are central to all of these properties. Some of these are easily understood within linear-response theory, but other fluctuation phenomena are less tractable. In particular, nonequilibrium noise poses significant theoretical challenges, both descriptive and predictive. This paper examines a few of the basic physical issues which motivate device-noise theory. The structure and operation of high-electron-mobility transistor are first reviewed. The recent nonlinear fluctuation theory of Stanton and Wilkins (1987) help to identify at least some of the complicated noise physics which can arise when carriers in GaAs-like conduction bands are subjected to high fields. Simple examples of fluctuation-dominated behaviour are discussed, with numerical illustrations. 20 refs., 9 figs

Water mobility in the endosperm of high beta-glucan barley mutants as studied by nuclear magnetic resonance imaging

DEFF Research Database (Denmark)

Seefeldt, Helene Fast; van den Berg, Frans W.J.; Köckenberger, Walter

2007-01-01

1H NMR imaging (MRI) was used as a noninvasive technique to study water distribution and mobility in hydrated barley (Hordeum vulgare L.) seeds of accessions with varying content of beta glucan (BG), a highly hygroscopic cell wall component. High contents of BG in barley are unfavorable in malting...... where it leads to clotting of filters and hazing of beer as well as in animal feed where it hinders the rapid uptake of energy. However, a high content of BG has a positive nutritional effect, as it lowers the cholesterol and the glycaemic index. It was studied whether water distribution and mobility...... were related to content and location of BG. Water mobility was investigated by following the rate and mode of desiccation in hydrated single seeds. In order to determine the different water components, a multispin echo experiment was set up to reveal the T2 transverse relaxation rates of water within...

Mobilizing Conflict Testimony: A Lens of Mobility for the Study of Documentary Practices in the Kashmir Conflict

Directory of Open Access Journals (Sweden)

Max Kramer

2017-08-01

Full Text Available In this paper I introduce a lens of mobility for the study of documentary film practices and gender in zones of conflict. By drawing on my qualitative research regarding the practice of the independent filmmaker Iffat Fatima, I will argue that a lens of mobility helps to grasp highly mobile media practices both conceptually and methodologically. Through a lens of mobility, my focus lies on the potential of documentary film to open the imaginative boundaries of conflict zones and to politically and emotionally mobilize the testimony offered from everyday life in a highly militarized zone. This specifically requires the tracing of moments of political mobilization beyond cognitive questions of conflicting narratives and representations.

COMPSs-Mobile: parallel programming for mobile-cloud computing

OpenAIRE

Lordan Gomis, Francesc-Josep; Badia Sala, Rosa Maria

2016-01-01

The advent of Cloud and the popularization of mobile devices have led us to a shift in computing access. Computing users will have an interaction display while the real computation will be performed remotely, in the Cloud. COMPSs-Mobile is a framework that aims to ease the development of energy-efficient and high-performing applications for this environment. The framework provides an infrastructure-unaware programming model that allows developers to code regular Android applications that, ...

Highly anisotropic mobility in solution processed TIPS-pentacene film studied by independently driven four GaIn probes

Science.gov (United States)

Yoshimoto, Shinya; Takahashi, Kohtaro; Suzuki, Mitsuharu; Yamada, Hiroko; Miyahara, Ryosuke; Mukai, Kozo; Yoshinobu, Jun

2017-08-01

We have studied in-plane anisotropy in the field-effect mobility of solution-processed organic semiconductor 6,13-bis(triisopropylsilylethynyl)pentacene by using independently driven four gallium indium (Ga-In) probes. Liquid-metal Ga-In probes are highly effective for reproducible conductivity measurements of organic thin films. We demonstrated that a high mobility anisotropy of 44 was obtained by using a square four-probe method and a feedback circuit to keep the channel potential constant. The present method minimized the influences of the contact resistance and the insensitivity of anisotropy in a linear arrangement in two-dimensional field-effect transistors.

Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

2016-01-04

In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

PERSONAL AND PROFESSIONAL MOBILITY: THE CONJUGACY PROBLEM

Directory of Open Access Journals (Sweden)

Tamara B. Sergeeva

2015-01-01

Full Text Available RETRACTED ARTICLEThe purpose of the paper is to develop a theoretical model conjugation of personal and professional mobility on the high school teachers’ example. Specific research problems of the study are to analyze the correlation properties of the mobile identity and mobile professional; the possibilities of forming professional mobility of teachers in the absence or underdevelopment of personal preconditions for mobility; search the features that can compensate this deficiency.Methods. The study is based on a theoretical analysis of different methodological approaches to the description of the personal and professional mobility. Also there were used the results of non-formal interview which was aimed at identifying the characteristics of the mobile professional teacher of high school.Results and scientific novelty. The concepts of «personal mobility» and «professional mobility» are clarified. Personal mobility is defined in the work as an integrative personal qualities, based on the individual properties (activity, plasticity, flexibility, adaptability, high energy source and manifests itself in the behavior and activities of the entity in the form of commitment, independence, openness to new experience, creativity and motivation for self-development, speed decisionmaking. Professional mobility is interpreted as a strategy to adapt to the changing conditions of professional activity, which is a special case of the general personal life strategy.Psychological readiness for pedagogical activity is considered as a link between the personal and professional mobility. Nine types of teacher's professional mobility, emerging as a result of different levels of personal mobility combined with the severity of psychological readiness for pedagogical activity are described.Practical significance. The analysis of the conjugacy problem of personal and professional mobility creates an informational basis for prolonged work on the formation of

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

Science.gov (United States)

Hu, Shiben; Ning, Honglong; Lu, Kuankuan; Fang, Zhiqiang; Li, Yuzhi; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-03-27

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

International Nuclear Information System (INIS)

Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

2005-01-01

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

Pedagogical use of mobile phones: research and development resources

Directory of Open Access Journals (Sweden)

Alex Botelho Mamari

2011-12-01

Full Text Available Mobile learning (m-learning is the field of research that investigates how the use of mobile devices can contribute to learning. This study considers that mobile phones, due to their popularization and related technological advances, may contribute to educational practices. Therefore, this article presents and examines tools for developing educational resources for mobile phones. Thus, after presenting different aspects related to m-learning, the paper describes and analyzes some tools found in MLE-Moodle. This is a plugin that extends the functionality of the virtual environment Moodle for mobile phones. In addition, the study presents MyMLE and Mobile Study, programs that enable the preparation of materials for mobile phones.

An Exploration of Teacher Attrition and Mobility in High Poverty Racially Segregated Schools

Science.gov (United States)

Djonko-Moore, Cara M.

2016-01-01

The purpose of this study was to examine the mobility (movement to a new school) and attrition (quitting teaching) patterns of teachers in high poverty, racially segregated (HPRS) schools in the US. Using 2007-9 survey data from the National Center for Education Statistics, a multi-level multinomial logistic regression was performed to examine the…

Dynamic Video Streaming in Caching-enabled Wireless Mobile Networks

OpenAIRE

Liang, C.; Hu, S.

2017-01-01

Recent advances in software-defined mobile networks (SDMNs), in-network caching, and mobile edge computing (MEC) can have great effects on video services in next generation mobile networks. In this paper, we jointly consider SDMNs, in-network caching, and MEC to enhance the video service in next generation mobile networks. With the objective of maximizing the mean measurement of video quality, an optimization problem is formulated. Due to the coupling of video data rate, computing resource, a...

Residential mobility and childhood leukemia.

Science.gov (United States)

Amoon, A T; Oksuzyan, S; Crespi, C M; Arah, O A; Cockburn, M; Vergara, X; Kheifets, L

2018-07-01

Studies of environmental exposures and childhood leukemia studies do not usually account for residential mobility. Yet, in addition to being a potential risk factor, mobility can induce selection bias, confounding, or measurement error in such studies. Using data collected for California Powerline Study (CAPS), we attempt to disentangle the effect of mobility. We analyzed data from a population-based case-control study of childhood leukemia using cases who were born in California and diagnosed between 1988 and 2008 and birth certificate controls. We used stratified logistic regression, case-only analysis, and propensity-score adjustments to assess predictors of residential mobility between birth and diagnosis, and account for potential confounding due to residential mobility. Children who moved tended to be older, lived in housing other than single-family homes, had younger mothers and fewer siblings, and were of lower socioeconomic status. Odds ratios for leukemia among non-movers living mobility, including dwelling type, increased odds ratios for leukemia to 2.61 (95% CI: 1.76-3.86) for living mobility of childhood leukemia cases varied by several sociodemographic characteristics, but not by the distance to the nearest power line or calculated magnetic fields. Mobility appears to be an unlikely explanation for the associations observed between power lines exposure and childhood leukemia. Copyright © 2018 Elsevier Inc. All rights reserved.

Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

KAUST Repository

Mejia, Israel I.; Salas Villaseñ or, Ana L.; Cha, Dong Kyu; Alshareef, Husam N.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo

2013-01-01

We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

Analysis of Pervasive Mobile Ad Hoc Routing Protocols

Science.gov (United States)

Qadri, Nadia N.; Liotta, Antonio

Mobile ad hoc networks (MANETs) are a fundamental element of pervasive networks and therefore, of pervasive systems that truly support pervasive computing, where user can communicate anywhere, anytime and on-the-fly. In fact, future advances in pervasive computing rely on advancements in mobile communication, which includes both infrastructure-based wireless networks and non-infrastructure-based MANETs. MANETs introduce a new communication paradigm, which does not require a fixed infrastructure - they rely on wireless terminals for routing and transport services. Due to highly dynamic topology, absence of established infrastructure for centralized administration, bandwidth constrained wireless links, and limited resources in MANETs, it is challenging to design an efficient and reliable routing protocol. This chapter reviews the key studies carried out so far on the performance of mobile ad hoc routing protocols. We discuss performance issues and metrics required for the evaluation of ad hoc routing protocols. This leads to a survey of existing work, which captures the performance of ad hoc routing algorithms and their behaviour from different perspectives and highlights avenues for future research.

Mobile health interventions in Indigenous populations

Directory of Open Access Journals (Sweden)

Valerie Onyinyechi Umaefulam

2017-06-01

Full Text Available Humans are social beings and communication is vital and necessary for every cultural group which may be the primary motivator, why many populations worldwide have taken up mobile phones (1. Communication via mobile has significant cultural and identity implications for Indigenous people worldwide particularly those living in rural and hard to reach communities because due to globalization, a number of people now live away from their local communities for trade, employment, education, etc. Thus, mobile phones are devices for social networking and communication; and enables cultural connection and identification with family and friends. Its affordability, versatility of features, and portability create an opportunity for utilizing mobile technology to positively impact the health via health education, promotion, and provision of remote health services among others.

Mobility management in mobile IP

Science.gov (United States)

Medidi, Sirisha; Golshani, Forouzan

2002-07-01

There is an emerging interest in integrating mobile wireless communication with the Internet based on the Ipv6 technology. Many issues introduced by the mobility of users arise when such an integration is attempted. This paper addresses the problem of mobility management, i.e., that of tracking the current IP addresses of mobile terminals and sustaining active IP connections as mobiles move. The paper presents some architectural and mobility management options for integrating wireless access to the Internet. We then present performance results for Mobile IPv4, route optimization and Mobile IPv6.

Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

Science.gov (United States)

Liu, Hung-Chuan; Lai, Yi-Chun; Lai, Chih-Chung; Wu, Bing-Shu; Zan, Hsiao-Wen; Yu, Peichen; Chueh, Yu-Lun; Tsai, Chuang-Chuang

2015-01-14

In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.

Determination of Charge-Carrier Mobility in Disordered Thin-Film Solar Cells as a Function of Current Density

Science.gov (United States)

Mäckel, Helmut; MacKenzie, Roderick C. I.

2018-03-01

Charge-carrier mobility is a fundamental material parameter, which plays an important role in determining solar-cell efficiency. The higher the mobility, the less time a charge carrier will spend in a device and the less likely it is that it will be lost to recombination. Despite the importance of this physical property, it is notoriously difficult to measure accurately in disordered thin-film solar cells under operating conditions. We, therefore, investigate a method previously proposed in the literature for the determination of mobility as a function of current density. The method is based on a simple analytical model that relates the mobility to carrier density and transport resistance. By revising the theoretical background of the method, we clearly demonstrate what type of mobility can be extracted (constant mobility or effective mobility of electrons and holes). We generalize the method to any combination of measurements that is able to determine the mean electron and hole carrier density, and the transport resistance at a given current density. We explore the robustness of the method by simulating typical organic solar-cell structures with a variety of physical properties, including unbalanced mobilities, unbalanced carrier densities, and for high or low carrier trapping rates. The simulations reveal that near VOC and JSC , the method fails due to the limitation of determining the transport resistance. However, away from these regions (and, importantly, around the maximum power point), the method can accurately determine charge-carrier mobility. In the presence of strong carrier trapping, the method overestimates the effective mobility due to an underestimation of the carrier density.

High-level waste tank modifications, installation of mobilization equipment/check out

International Nuclear Information System (INIS)

Schiffhauer, M.A.; Thompson, S.C.

1992-01-01

PUREX high-level waste (HLW) is contained at the West Valley Demonstration Project (WVDP) in an underground carbon-steel storage tank. The HLW consists of a precipitated sludge and an alkaline supernate. This report describes the system that the WVDP has developed and implemented to resuspend and wash the HLW sludge from the tank. The report discusses Sludge Mobilization and Wash System (SMWS) equipment design, installation, and testing. The storage tank required modifications to accommodate the SMWS. These modifications are discussed as well

SUPL support for mobile devices

Science.gov (United States)

Narisetty, Jayanthi; Soghoyan, Arpine; Sundaramurthy, Mohanapriya; Akopian, David

2012-02-01

Conventional Global Positioning System (GPS) receivers operate well in open-sky environments. But their performance degrades in urban canyons, indoors and underground due to multipath, foliage, dissipation, etc. To overcome such situations, several enhancements have been suggested such as Assisted GPS (A-GPS). Using this approach, orbital parameters including ephemeris and almanac along with reference time and coarse location information are provided to GPS receivers to assist in acquisition of weak signals. To test A-GPS enabled receivers high-end simulators are used, which are not affordable by many academic institutions. This paper presents an economical A-GPS supplement for inexpensive simulators which operates on application layer. Particularly proposed solution is integrated with National Instruments' (NI) GPS Simulation Toolkit and implemented using NI's Labview environment. This A-GPS support works for J2ME and Android platforms. The communication between the simulator and the receiver is in accordance with the Secure User Plane Location (SUPL) protocol encapsulated with Radio Resource Location Protocol (RRLP) applies to Global System for Mobile Communications (GSM) and Universal Mobile Telecommunications System (UMTS) cellular networks.

Biogeochemical Controls on Technetium Mobility in Biogeochemical Controls on Technetium Mobility in FRC Sediments

International Nuclear Information System (INIS)

Lloyd, J.R.; McBeth, J.M.; Livens, F.R.; Bryan, N.D.; Ellis, B.; Sharma, H.; Burke, I.T.; Morris, K.

2004-01-01

Technetium-99 is a priority pollutant at numerous DOE sites, due to its long half-life (2.1 x 10 5 years), high mobility as Tc(VII) in oxic waters, and bioavailability as a sulfate analog. 99 Tc is far less mobile under anaerobic conditions, forming insoluble Tc(IV) precipitates. As anaerobic microorganisms can reduce soluble Tc(VII) to insoluble Tc(IV), microbial metabolism may have the potential to treat sediments and waters contaminated with Tc. Baseline studies of fundamental mechanisms of Tc(VII) bioreduction and precipitation (reviewed by Lloyd et al, 2002) have generally used pure cultures of metal-reducing bacteria, in order to develop conceptual models for the biogeochemical cycling of Tc. There is, however, comparatively little known about interactions of metal-reducing bacteria with environmentally relevant trace concentrations of Tc, against a more complex biogeochemical background provided by mixed microbial communities in the subsurface. The objective of this new NABIR project is to probe the site specific biogeochemical conditions that control the mobility of Tc at the FRC (Oak Ridge, TN). This information is required for the rational design of in situ bioremediation strategies for technetium-contaminated subsurface environments. We will use a combination of geochemical, mineralogical, microbiological and spectroscopic techniques to determine the solubility and phase associations of Tc in FRC sediments, and characterize the underpinning biogeochemical controls. A key strength of this project is that many of the techniques we are using have already been optimized by our research team, who are also studying the biogeochemical controls on Tc mobility in marine and freshwater sediments in the UK in a NERC funded companion study.

Mobility Optimization in LaxBa1-xSnO3 Thin Films Deposited via High Pressure Oxygen Sputtering

Science.gov (United States)

Postiglione, William Michael

BaSnO3 (BSO) is one of the most promising semiconducting oxides currently being explored for use in future electronic applications. BSO possesses a unique combination of high room temperature mobility (even at very high carrier concentrations, > 1019 cm-3), wide band gap, and high temperature stability, making it a potentially useful material for myriad applications. Significant challenges remain however in optimizing the properties and processing of epitaxial BSO, a critical step towards industrial applications. In this study we investigate the viability of using high pressure oxygen sputtering to produce high mobility La-doped BSO thin films. In the first part of our investigation we synthesized, using solid state reaction, phase-pure stoichiometric polycrystalline 2% La-doped BaSnO 3 for use as a target material in our sputtering system. We verified the experimental bulk lattice constant, 4.117 A, to be in good agreement with literature values. Next, we set out to optimize the growth conditions for DC sputtering of La doped BaSnO3. We found that mobility for all our films increased monotonically with deposition temperature, suggesting the optimum temperature for deposition is > 900 °C and implicating a likely improvement in transport properties with post-growth thermal anneal. We then preformed systematic studies aimed at probing the effects of varying thickness and deposition rate to optimize the structural and electronic transport properties in unbuffered BSO films. In this report we demonstrate the ability to grow 2% La BSO thin films with an effective dopant activation of essentially 100%. Our films showed fully relaxed (bulk), out-of-plane lattice parameter values when deposited on LaAlO3, MgO, and (LaAlO3)0.3(Sr2 TaAlO6)0.7 substrates, and slightly expanded out-of-plane lattice parameters for films deposited on SrTiO3, GdScO3, and PrScO3 substrates. The surface roughness's of our films were measured via AFM, and determined to be on the nm scale or better

A third generation mobile high energy radiography system

International Nuclear Information System (INIS)

Fry, D.A.; Valdez, J.E.; Johnson, C.S.; Kimerly, H.J.; Vananne, J.R.

1997-01-01

A third generation mobile high energy radiographic capability has been completed and put into service by the Los Alamos National Laboratory. The system includes a 6 MeV linac x-ray generator, Co-60 gamma source, all-terrain transportation, on-board power, real-time radiography (RTR), a control center, and a complete darkroom capability. The latest version includes upgraded and enhanced portability, flexibility, all-terrain operation, all-weather operation, and ease of use features learned from experience with the first and second generation systems. All systems were required to have the following characteristics; all-terrain, all-weather operation, self-powered, USAF airlift compatible, reliable, simple to setup, easy to operate, and all components two-person portable. The systems have met these characteristics to differing degrees, as is discussed in the following section, with the latest system being the most capable

Organic-inorganic hybrid perovskite quantum dots with high PLQY and enhanced carrier mobility through crystallinity control by solvent engineering and solid-state ligand exchange.

Science.gov (United States)

Woo Choi, Jin; Woo, Hee Chul; Huang, Xiaoguang; Jung, Wan-Gil; Kim, Bong-Joong; Jeon, Sie-Wook; Yim, Sang-Youp; Lee, Jae-Suk; Lee, Chang-Lyoul

2018-05-22

The photoluminescence quantum yield (PLQY) and charge carrier mobility of organic-inorganic perovskite QDs were enhanced by the optimization of crystallinity and surface passivation as well as solid-state ligand exchange. The crystallinity of perovskite QDs was determined by the Effective solvent field (Esol) of various solvents for precipitation. The solvent with high Esol could more quickly countervail the localized field generated by the polar solvent, and it causes fast crystallization of the dissolved precursor, which results in poor crystallinity. The post-ligand adding process (PLAP) and post-ligand exchange process (PLEP) increase the PLQY of perovskite QDs by reducing non-radiative recombination and the density of surface defect states through surface passivation. Particularly, the post ligand exchange process (PLEP) in the solid-state improved the charge carrier mobility of perovskite QDs in addition to the PLQY enhancement. The ligand exchange with short alkyl chain length ligands could improve the packing density of perovskite QDs in films by reducing the inter-particle distance between perovskite QDs. The maximum hole mobility of 6.2 × 10-3 cm2 V-1 s-1, one order higher than that of pristine QDs without the PLEP, is obtained at perovskite QDs with hexyl ligands. By using PLEP treatment, compared to the pristine device, a 2.5 times higher current efficiency in perovskite QD-LEDs was achieved due to the improved charge carrier mobility and PLQY.

Effects of silicon-nitride passivation on the electrical behavior of 0.1-μm pseudomorphic high-electron-mobility transistors

International Nuclear Information System (INIS)

Oh, Jung-Hun; Sul, Woo-Suk; Han, Hyo-Jong; Jang, Hae-Kang; Son, Myung-Sik; Rhee, Jin-Koo; Kim, Sam- Dong

2004-01-01

We examine the effects of surface state formation due to silicon-nitride passivation on the electrical characteristics of GaAs-based 0.1-μm pseudomorphic high-electron-mobility transistors (pHEMTs). In this study, DC and noise characteristic are investigated before and after the passivation of the pHEMTs. After the passivation, we observe significant degradation of noise performance in the frequency range of 55 - 62 GHz. We also observe clear increases in the drain-source saturation current at a gate voltage of 0 V and in the extrinsic transconductance at a drain voltage of 1 V from 325 and 264 to 365 mA/mm and 304 mS/mm, respectively, with no significant variation in pinchoff voltage. We propose that the observed variations in the DC and the noise characteristics are due to the positively charged surface state after deposition of the silicon nitride passivation film. Hydrodynamic device model simulations were performed based upon the proposed mechanisms for the change in electrical behavior, and the calculated results show good agreement with the experimental results.

The Intracranial Distribution of Gliomas in Relation to Exposure From Mobile Phones

DEFF Research Database (Denmark)

Grell, Kathrine; Frederiksen, Kirsten; Schüz, Joachim

2016-01-01

, the results were similar. The association was independent of the cumulative call time and cumulative number of calls. However, our model used reported side of mobile phone use, which is potentially influenced by recall bias. The point process method provides an alternative to previously used epidemiologic......When investigating the association between brain tumors and use of mobile telephones, accurate data on tumor position are essential, due to the highly localized absorption of energy in the human brain from the radio-frequency fields emitted. We used a point process model to investigate...... this association using information that included tumor localization data from the INTERPHONE Study (Australia, Canada, Denmark, Finland, France, Germany, Israel, Italy, Japan, New Zealand, Norway, Sweden, and the United Kingdom). Our main analysis included 792 regular mobile phone users diagnosed with a glioma...

Effects of the Effect of Ultra High Frequency Mobile Phone Radiation on Human Health.

Science.gov (United States)

Moradi, Mosa; Naghdi, Nasrollah; Hemmati, Hamidreza; Asadi-Samani, Majid; Bahmani, Mahmoud

2016-05-01

Public and occupational exposure to electromagnetic fields due to the growing trend of electronic devices may cause adverse effects on human health. This paper describes the risk of mutation and sexual trauma and infertility in masculine sexual cell by mobile phone radiations. In this study, we measured the emitted dose from a radiofrequency device, such as switching high voltage at different frequencies using a scintillation detector. The switching high voltage power supply (HVPS) was built for the Single Photon Emission Computed Tomography (SPECT) system. For radiation dosimetry, we used an ALNOR scintillator that can measure gamma radiation. The simulation was performed by MATLAB software, and data from the International Commission on Non-Ionizing Radiation Protection (ICNIRP) were used to verify the simulation. We investigated the risks that result from the waves, according to a report by International Commission on Non Ionizing Radiation Protection (ICNIRP), to every organ of the body is defined by the beam and electromagnetic radiation from this electronic device on people. The results showed that the maximum personal dose over a 15-min period working at the mentioned HVPS did not exceed 0.31 μSV/h (with an aluminum shield). So, according to other sources of radiation, continuous working time of the system should not be more than 10 hours. Finally, a characteristic curve for secure working with modules at different frequencies was reported. The RF input signal to the body for maximum penetration depth (δ) and electromagnetic energy absorption rate (SAR) of biological tissue were obtained for each tissue. The results of this study and International Commission of Non Ionization Radiation Protection (ICNIRP) reports showed the people who spend more than 50 minutes a day using a cell phone could have early dementia or other thermal damage due to the burning of glucose in the brain.

Effects of flooding on phosphorus and iron mobilization in highly weathered soils: Short-term effects and mechanisms

Science.gov (United States)

Maranguit, Deejay

2017-04-01

The strong affinity of phosphorus (P) to iron (Fe) oxides and hydroxides in highly weathered tropical soils limits P availability and therefore plant productivity. In flooded soils, however, P fixed by Fe oxides and hydroxides can be released and transformed to a more available form because of Fe3+ reduction to Fe2+. These P dynamics in flooded soils are well documented for rice paddies. Such effects are much less studied in other land-use types under the influence of seasonal flooding, especially in the tropics during heavy monsoon rains. The aim of this study was to investigate the mobilization of P during flooding leading to anaerobic conditions in topsoil and subsoil horizons depending on land-use type. Samples were collected in highly weathered soils from four replicate sites under natural rainforest, jungle rubber, rubber and oil palm plantations in Sumatra, Indonesia. Topsoil and subsoil were taken to ensure a wide range of soil organic matter (SOM) and P contents. Soils were incubated under anaerobic, flooded conditions at 30 ± 1 oC for 60 days. Our results confirmed the hypothesis that soil flooding mobilizes P and increases P availability. Two distinct and opposite phases, however, were observed upon flooding. During the first three weeks of flooding, the dissolved P (DP) concentration peaked, simultaneously with a peak of dissolved Fe2+ (DFe2+) and dissolved organic carbon (DOC) in the soil solution. After three weeks, P availability in soils decreased, although Fe-P and available P did not reach initial, pre-flooding levels. Accordingly, Fe dissolution and P mobilization were reversible processes. Furthermore, land-use type influenced the impacts of flooding on P and Fe forms mainly in the topsoil, where P dissolution and availability were generally higher under forest and, to a lesser extent, under jungle rubber. A positive correlation between DOC and DFe2+ (R2 = 0.42) in topsoil indicates that the intensity of microbially-mediated Fe3+ reduction is

Investigating the Mobility of Light Autonomous Tracked Vehicles using a High Performance Computing Simulation Capability

Science.gov (United States)

Negrut, Dan; Mazhar, Hammad; Melanz, Daniel; Lamb, David; Jayakumar, Paramsothy; Letherwood, Michael; Jain, Abhinandan; Quadrelli, Marco

2012-01-01

This paper is concerned with the physics-based simulation of light tracked vehicles operating on rough deformable terrain. The focus is on small autonomous vehicles, which weigh less than 100 lb and move on deformable and rough terrain that is feature rich and no longer representable using a continuum approach. A scenario of interest is, for instance, the simulation of a reconnaissance mission for a high mobility lightweight robot where objects such as a boulder or a ditch that could otherwise be considered small for a truck or tank, become major obstacles that can impede the mobility of the light autonomous vehicle and negatively impact the success of its mission. Analyzing and gauging the mobility and performance of these light vehicles is accomplished through a modeling and simulation capability called Chrono::Engine. Chrono::Engine relies on parallel execution on Graphics Processing Unit (GPU) cards.

High mobility organic field-effect transistor based on water-soluble deoxyribonucleic acid via spray coating

Energy Technology Data Exchange (ETDEWEB)

Shi, Wei; Han, Shijiao; Huang, Wei; Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2015-01-26

High mobility organic field-effect transistors (OFETs) by inserting water-soluble deoxyribonucleic acid (DNA) buffer layer between electrodes and pentacene film through spray coating process were fabricated. Compared with the OFETs incorporated with DNA in the conventional organic solvents of ethanol and methanol: water mixture, the water-soluble DNA based OFET exhibited an over four folds enhancement of field-effect mobility from 0.035 to 0.153 cm{sup 2}/Vs. By characterizing the surface morphology and the crystalline structure of pentacene active layer through atomic force microscope and X-ray diffraction, it was found that the adoption of water solvent in DNA solution, which played a key role in enhancing the field-effect mobility, was ascribed to both the elimination of the irreversible organic solvent-induced bulk-like phase transition of pentacene film and the diminution of a majority of charge trapping at interfaces in OFETs.

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

International Nuclear Information System (INIS)

Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

2015-01-01

This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

PATTERN-BASED AND REUSE-DRIVEN ARCHITECTING OF MOBILE CLOUD SOFTWARE

OpenAIRE

Aakash Ahmad1 , Ahmed B. Altamimi1 , Abdulrahman Alreshidi1 , Mohammad T. Alshammari1 , Numra Saeed2 , Jamal M. Aqib1

2018-01-01

Context: Mobile Cloud Computing (MCC) represents the state-of-the-art technology that unifies mobile computing and cloud computing to develop systems that are portable yet resource sufficient. Mobile computing allows portable communication and context-aware computation, however, due to the energy and resource constraints mobile computing lacks performance for computationally intensive tasks. Cloud computing model uses the ‘as a service’ model - providing hardware and software services - to of...

PATTERN-BASED AND REUSE-DRIVEN ARCHITECTING OF MOBILE CLOUD SOFTWARE

OpenAIRE

Aakash Ahmad

2017-01-01

Context: Mobile Cloud Computing (MCC) represents the state-of-the-art technology that unifies mobile computing and cloud computing to develop systems that are portable yet resource sufficient. Mobile computing allows portable communication and context-aware computation, however, due to the energy and resource constraints mobile computing lacks performance for computationally intensive tasks. Cloud computing model uses the ‘as a service’ model - providing hardware and software services - to of...

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

NARCIS (Netherlands)

Fujii, M.; Ishikawa, Y.; Ishihara, R.; Van der Cingel, J.; Mofrad, M.R.T.; Horita, M.; Uraoka, Y.

2013-01-01

In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C

Structural Mobility, Exchange Mobility and Subgroup Consistent Mobility Measurement – US–German Mobility Measurements Revisited

OpenAIRE

C. SCHLUTER; D. VAN DE GAER

2008-01-01

We formalize the concept of structural mobility and use the framework of subgroup consistent mobility measurement to derive a relative and an absolute measure of mobility that is increasing both in upward structural mobility and exchange mobility. In our empirical illustration, we contribute substantively to the ongoing debate about mobility rankings between the USA and Germany.

SAME4HPC: A Promising Approach in Building a Scalable and Mobile Environment for High-Performance Computing

Energy Technology Data Exchange (ETDEWEB)

Karthik, Rajasekar [ORNL

2014-01-01

In this paper, an architecture for building Scalable And Mobile Environment For High-Performance Computing with spatial capabilities called SAME4HPC is described using cutting-edge technologies and standards such as Node.js, HTML5, ECMAScript 6, and PostgreSQL 9.4. Mobile devices are increasingly becoming powerful enough to run high-performance apps. At the same time, there exist a significant number of low-end and older devices that rely heavily on the server or the cloud infrastructure to do the heavy lifting. Our architecture aims to support both of these types of devices to provide high-performance and rich user experience. A cloud infrastructure consisting of OpenStack with Ubuntu, GeoServer, and high-performance JavaScript frameworks are some of the key open-source and industry standard practices that has been adopted in this architecture.

Mobile code security

Science.gov (United States)

Ramalingam, Srikumar

2001-11-01

A highly secure mobile agent system is very important for a mobile computing environment. The security issues in mobile agent system comprise protecting mobile hosts from malicious agents, protecting agents from other malicious agents, protecting hosts from other malicious hosts and protecting agents from malicious hosts. Using traditional security mechanisms the first three security problems can be solved. Apart from using trusted hardware, very few approaches exist to protect mobile code from malicious hosts. Some of the approaches to solve this problem are the use of trusted computing, computing with encrypted function, steganography, cryptographic traces, Seal Calculas, etc. This paper focuses on the simulation of some of these existing techniques in the designed mobile language. Some new approaches to solve malicious network problem and agent tampering problem are developed using public key encryption system and steganographic concepts. The approaches are based on encrypting and hiding the partial solutions of the mobile agents. The partial results are stored and the address of the storage is destroyed as the agent moves from one host to another host. This allows only the originator to make use of the partial results. Through these approaches some of the existing problems are solved.

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

International Nuclear Information System (INIS)

Ma Xiao-Hua; Zhang Ya-Man; Chen Wei-Wei; Wang Xin-Hua; Yuan Ting-Ting; Pang Lei; Liu Xin-Yu

2015-01-01

In this paper, the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors (HEMTs), featuring a 50-nm and a 150-nm GaN thick channel layer, respectively, are compared. The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage (BV off ). Device simulation indicates that thickening the channel increases the drain-induced barrier lowering (DIBL) but reduces the lateral electric field in the channel and buffer underneath the gate. The increase of BV off in the thick channel device is due to the reduction of the electric field. These results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BV off in AlGaN/GaN HEMTs. (paper)

Social mobility and subclinical atherosclerosis in a middle-income country: Association of intra- and inter-generational social mobility with carotid intima-media thickness in the Brazilian Longitudinal Study of Adult Health (ELSA-Brasil).

Science.gov (United States)

Guimarães, Joanna M N; Clarke, Philippa; Tate, Denise; Coeli, Claudia Medina; Griep, Rosane Harter; Fonseca, Maria de Jesus Mendes da; Santos, Itamar S; Melo, Enirtes Caetano Prates; Chor, Dora

2016-11-01

Over the past half century Brazil has undergone a process of dramatic industrialization and urbanization. Cardiovascular diseases (CVD) have become common due to rapid demographic, epidemiologic, and nutritional transitions. The association of social mobility with subclinical CVD has been rarely explored, particularly in developing societies. We investigated the association of intra- and inter-generational social mobility with carotid intima-media thickness (IMT), a marker of subclinical or asymptomatic atherosclerosis, in a large Brazilian sample (ELSA-Brasil). We used baseline data (2008-2010) for 7343 participants from ELSA-Brasil. Intra-generational social mobility was defined as the change in occupational social class between participants' first occupation and current occupation. Inter-generational social mobility was defined as the change in occupational social class of the head of the household when the participant started working and participants' current occupation. Social mobility groups were classified as: stable high (reference), upward, downward and stable low. Linear regression models were used to examine the associations between type of social mobility and IMT. Compared to those who experienced stable high occupational status across generations, downward inter-generational mobility was associated with greater IMT. Additionally, those who declined the most in occupational status had the highest values of IMT, even after adjustments for lifestyle and cardiovascular factors. For intra-generational mobility, stable low versus stable high social mobility was independently associated with higher IMT. Subclinical atherosclerosis is patterned by socioeconomic status both within and across generations, demonstrating an association even before symptoms of CVD appear. The health consequences of downward inter-generational social mobility were not fully explained by lifestyle and cardiovascular factors, whereas being consistently exposed to low occupational

Mobile web browsing using the cloud

CERN Document Server

Zhao, Bo; Cao, Guohong

2013-01-01

This brief surveys existing techniques to address the problem of long delays and high power consumption for web browsing on smartphones, which can be due to the local computational limitation at the smartphone (e.g., running java scripts or flash objects) level. To address this issue, an architecture called Virtual-Machine based Proxy (VMP) is introduced, shifting the computing from smartphones to the VMP which may reside in the cloud. Mobile Web Browsing Using the Cloud illustrates the feasibility of deploying the proposed VMP system in 3G networks through a prototype using Xen virtual machin

Highly mobile charge-transfer excitons in two-dimensional WS2/tetracene heterostructures

Science.gov (United States)

Zhu, Tong; Yuan, Long; Zhao, Yan; Zhou, Mingwei; Wan, Yan; Mei, Jianguo; Huang, Libai

2018-01-01

Charge-transfer (CT) excitons at heterointerfaces play a critical role in light to electricity conversion using organic and nanostructured materials. However, how CT excitons migrate at these interfaces is poorly understood. We investigate the formation and transport of CT excitons in two-dimensional WS2/tetracene van der Waals heterostructures. Electron and hole transfer occurs on the time scale of a few picoseconds, and emission of interlayer CT excitons with a binding energy of ~0.3 eV has been observed. Transport of the CT excitons is directly measured by transient absorption microscopy, revealing coexistence of delocalized and localized states. Trapping-detrapping dynamics between the delocalized and localized states leads to stretched-exponential photoluminescence decay with an average lifetime of ~2 ns. The delocalized CT excitons are remarkably mobile with a diffusion constant of ~1 cm2 s−1. These highly mobile CT excitons could have important implications in achieving efficient charge separation. PMID:29340303

Atomic mobility in the overheated amorphous GeTe compound for phase change memories

International Nuclear Information System (INIS)

Sosso, G.C.; Behler, J.; Bernasconi, M.

2016-01-01

Abstractauthoren Phase change memories rest on the ability of some chalcogenide alloys to undergo a fast and reversible transition between the crystalline and amorphous phases upon Joule heating. The fast crystallization is due to a high nucleation rate and a large crystal growth velocity which are actually possible thanks to the fragility of the supercooled liquid that allows for the persistence of a high atomic mobility at high supercooling where the thermodynamical driving force for crystallization is also high. Since crystallization in the devices occurs by rapidly heating the amorphous phase, hysteretic effects might arise with a different diffusion coefficient and viscosity on heating than on cooling. In this work, we have quantified these hysteretic effects in the phase change compound GeTe by means of molecular dynamics simulations. The atomic mobility in the overheated amorphous phase is lower than in supercooled liquid at the same temperature and the viscosity is consequently higher. Still, the simulations of the overheated amorphous phase reveal a breakdown of the Stokes-Einstein relation between the diffusion coefficient and the viscosity, similarly to what we found previously in the supercooled liquid. Evidences are provided that the breakdown is due to the emergence of dynamical heterogeneities at high supercooling. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s

KAUST Repository

Smith, Casey; Qaisi, Ramy M.; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

2013-01-01

Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s

KAUST Repository

Smith, Casey

2013-07-23

Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

Game-theoretic pricing for video streaming in mobile networks.

Science.gov (United States)

Lin, W Sabrina; Liu, K J Ray

2012-05-01

Mobile phones are among the most popular consumer devices, and the recent developments of 3G networks and smart phones enable users to watch video programs by subscribing data plans from service providers. Due to the ubiquity of mobile phones and phone-to-phone communication technologies, data-plan subscribers can redistribute the video content to nonsubscribers. Such a redistribution mechanism is a potential competitor for the mobile service provider and is very difficult to trace given users' high mobility. The service provider has to set a reasonable price for the data plan to prevent such unauthorized redistribution behavior to protect or maximize his/her own profit. In this paper, we analyze the optimal price setting for the service provider by investigating the equilibrium between the subscribers and the secondary buyers in the content-redistribution network. We model the behavior between the subscribers and the secondary buyers as a noncooperative game and find the optimal price and quantity for both groups of users. Based on the behavior of users in the redistribution network, we investigate the evolutionarily stable ratio of mobile users who decide to subscribe to the data plan. Such an analysis can help the service provider preserve his/her profit under the threat of the redistribution networks and can improve the quality of service for end users.

A compact high resolution ion mobility spectrometer for fast trace gas analysis.

Science.gov (United States)

Kirk, Ansgar T; Allers, Maria; Cochems, Philipp; Langejuergen, Jens; Zimmermann, Stefan

2013-09-21

Drift tube ion mobility spectrometers (IMS) are widely used for fast trace gas detection in air, but portable compact systems are typically very limited in their resolving power. Decreasing the initial ion packet width improves the resolution, but is generally associated with a reduced signal-to-noise-ratio (SNR) due to the lower number of ions injected into the drift region. In this paper, we present a refined theory of IMS operation which employs a combined approach for the analysis of the ion drift and the subsequent amplification to predict both the resolution and the SNR of the measured ion current peak. This theoretical analysis shows that the SNR is not a function of the initial ion packet width, meaning that compact drift tube IMS with both very high resolution and extremely low limits of detection can be designed. Based on these implications, an optimized combination of a compact drift tube with a length of just 10 cm and a transimpedance amplifier has been constructed with a resolution of 183 measured for the positive reactant ion peak (RIP(+)), which is sufficient to e.g. separate the RIP(+) from the protonated acetone monomer, even though their drift times only differ by a factor of 1.007. Furthermore, the limits of detection (LODs) for acetone are 180 pptv within 1 s of averaging time and 580 pptv within only 100 ms.

Electrical spin injection into high mobility 2D systems.

Science.gov (United States)

Oltscher, M; Ciorga, M; Utz, M; Schuh, D; Bougeard, D; Weiss, D

2014-12-05

We report on spin injection into a high mobility 2D electron system confined at an (Al,Ga)As/GaAs interface, using (Ga,Mn)As Esaki diode contacts as spin aligners. We measured a clear nonlocal spin valve signal, which varies nonmonotonically with the applied bias voltage. The magnitude of the signal cannot be described by the standard spin drift-diffusion model, because at maximum this would require the spin polarization of the injected current to be much larger than 100%, which is unphysical. A strong correlation of the spin signal with contact width and electron mean free path suggests that ballistic transport in the 2D region below ferromagnetic contacts should be taken into account to fully describe the results.

Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

Directory of Open Access Journals (Sweden)

W. A. Sasangka

2016-09-01

Full Text Available Dislocations are known to be associated with both physical and electrical degradation mechanisms of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs. We have observed threading dislocation movement toward the gate-edges in AlGaN/GaN-on-Si HEMT under high reverse bias stressing. Stressed devices have higher threading dislocation densities (i.e. ∼5 × 109/cm2 at the gate-edges, as compared to unstressed devices (i.e. ∼2.5 × 109/cm2. Dislocation movement correlates well with high tensile stress (∼1.6 GPa at the gate-edges, as seen from inverse piezoelectric calculations and x-ray synchrotron diffraction residual stress measurements. Based on Peierls stress calculation, we believe that threading dislocations move via glide in 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 00 } and 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 01 } slip systems. This result illustrates the importance of threading dislocation mobility in controlling the reliability of AlGaN/GaN-on-Si HEMTs.

On Population Mobility in Market Economy

Institute of Scientific and Technical Information of China (English)

Yu Xianzhong

2005-01-01

Regular and extensive social population mobility in natural economy is neither necessary nor possible while in a planned economic system, social population distribution is necessary but social population mobility is unlikely. Modern market economy as a highly mobile economy has a free-mobile population characteristic of market economy, which is fundamental to optimize human resource distribution. The rule for the modern market-based population movement is as follows: If the mobile population is the rational behavior choosers, under the permissive developmental environment as arranged by the social system, they tend to move from low profit-making fields to high income fields when there exists comparable difference of income in different regions and different industries, and various potential and practical profit-making chances. The degree of difference in comparable income is positively co-relative to the velocity and flux of mobile population.

Mobile Learning Using Mobile Phones

Science.gov (United States)

Vicente, Paula

2013-01-01

The participation in mobile learning programs is conditioned by having/using mobile communication technology. Those who do not have or use such technology cannot participate in mobile learning programs. This study evaluates who are the most likely participants of mobile learning programs by examining the demographic profile and mobile phone usage…

A southern African origin and cryptic structure in the highly mobile plains zebra.

Science.gov (United States)

Pedersen, Casper-Emil T; Albrechtsen, Anders; Etter, Paul D; Johnson, Eric A; Orlando, Ludovic; Chikhi, Lounes; Siegismund, Hans R; Heller, Rasmus

2018-03-01

The plains zebra (Equus quagga) is an ecologically important species of the African savannah. It is also one of the most numerous and widely distributed ungulates, and six subspecies have been described based on morphological variation. However, the within-species evolutionary processes have been difficult to resolve due to its high mobility and a lack of consensus regarding the population structure. We obtained genome-wide DNA polymorphism data from more than 167,000 loci for 59 plains zebras from across the species range, encompassing all recognized extant subspecies, as well as three mountain zebras (Equus zebra) and three Grevy's zebras (Equus grevyi). Surprisingly, the population genetic structure does not mirror the morphology-based subspecies delineation, underlining the dangers of basing management units exclusively on morphological variation. We use demographic modelling to provide insights into the past phylogeography of the species. The results identify a southern African location as the most likely source region from which all extant populations expanded around 370,000 years ago. We show evidence for inclusion of the extinct and phenotypically divergent quagga (Equus quagga quagga) in the plains zebra variation and reveal that it was less divergent from the other subspecies than the northernmost (Ugandan) extant population.

Cost-effective handoff scheme based on mobility-aware dual pointer forwarding in proxy mobile IPv6 networks.

Science.gov (United States)

Son, Seungsik; Jeong, Jongpil

2014-01-01

In this paper, a mobility-aware Dual Pointer Forwarding scheme (mDPF) is applied in Proxy Mobile IPv6 (PMIPv6) networks. The movement of a Mobile Node (MN) is classified as intra-domain and inter-domain handoff. When the MN moves, this scheme can reduce the high signaling overhead for intra-handoff/inter-handoff, because the Local Mobility Anchor (LMA) and Mobile Access Gateway (MAG) are connected by pointer chains. In other words, a handoff is aware of low mobility between the previously attached MAG (pMAG) and newly attached MAG (nMAG), and another handoff between the previously attached LMA (pLMA) and newly attached LMA (nLMA) is aware of high mobility. Based on these mobility-aware binding updates, the overhead of the packet delivery can be reduced. Also, we analyse the binding update cost and packet delivery cost for route optimization, based on the mathematical analytic model. Analytical results show that our mDPF outperforms the PMIPv6 and the other pointer forwarding schemes, in terms of reducing the total cost of signaling.

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

International Nuclear Information System (INIS)

Yu Xin-Hai; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Xi Xiao-Wen

2015-01-01

The high power microwave (HPM) damage effect on the AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ −0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy (SEM) illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device burn-out and the location beneath the gate near the source side is most susceptible to burn-out, which is in accordance with the simulated results. (paper)

Solid colloids with surface-mobile linkers

International Nuclear Information System (INIS)

Van der Meulen, Stef A J; Helms, Gesa; Dogterom, Marileen

2015-01-01

In this report we review the possibilities of using colloids with surface mobile linkers for the study of colloidal self-assembly processes. A promising route to create systems with mobile linkers is the use of lipid (bi-)layers. These lipid layers can be either used in the form of vesicles or as coatings for hard colloids and emulsion droplets. Inside the lipid bilayers molecules can be inserted via membrane anchors. Due to the fluidity of the lipid bilayer, the anchored molecules remain mobile. The use of different lipid mixtures even allows creating Janus-like particles that exhibit directional bonding if linkers are used which have a preference for a certain lipid phase. In nature mobile linkers can be found e.g. as receptors in cells. Therefore, towards the end of the review, we also briefly address the possibility of using colloids with surface mobile linkers as model systems to mimic cell–cell interactions and cell adhesion processes. (topical review)

The Influence of Perceived Convenience and Curiosity on Continuance Intention in Mobile English Learning for High School Students Using PDAs

Science.gov (United States)

Chang, Chi-Cheng; Tseng, Kuo-Hung; Liang, Chaoyun; Yan, Chi-Fang

2013-01-01

Mobile learning aims to utilise communication devices such as mobile devices and wireless connection in combination with e-learning systems, allowing learners to experience convenient, instant and suitable learning at unrestricted time and place. Participants were 125 Taiwanese senior high school students, whose continuance intention was examined…

Mobilizing community energy

International Nuclear Information System (INIS)

Bomberg, Elizabeth; McEwen, Nicola

2012-01-01

What explains the galvanising of communities to participate actively in energy projects? How do groups mobilize to overcome the often formidable barriers highlighted in the existing literature? Drawing on original qualitative research of 100 community energy groups in Scotland, including six in-depth case studies, we explain how effective mobilization occurs and the political dynamics surrounding such mobilization. To capture these dynamics, we adapt theories offered by literature on social movements, with a particular focus on resource mobilization theories. Applying our adapted framework, we identify two particular sets of resources shaping community energy mobilization: (i) structural resources, which refer to the broad political context structuring and constraining opportunities for community energy mobilization; and (ii) symbolic resources—less tangible resources used to galvanise participants. We investigate to what extent our case study groups were able to draw upon and exploit these resources. We find that structural resources can either facilitate or hinder mobilization; what matters is how state resources are exploited and constraints mitigated. The use of symbolic resources was highly effective in aiding mobilization. Each of the groups examined – despite their considerable variation – effectively exploited symbolic resources such as shared identity or desire for strong, self reliant communities. - Highlights: ► Explains how/why community energy groups mobilize and the political dynamics surrounding it. ► Draws on original qualitative research of 100 community energy groups in Scotland. ► Identifies two particular sets of resources (structural and symbolic) and their importance. ► Explains how these resources shape community energy mobilization in Scotland. ► Provides an original application of resource mobilization theory to the field of energy studies.

Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

Directory of Open Access Journals (Sweden)

Charith Jayanada Koswaththage

2016-11-01

Full Text Available InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.

High Field Asymmetric Waveform Ion Mobility Spectrometry (FAIMS) for Mass Spectrometry-Based Proteomics

Science.gov (United States)

Swearingen, Kristian E.; Moritz, Robert L.

2013-01-01

SUMMARY High field asymmetric waveform ion mobility spectrometry (FAIMS) is an atmospheric pressure ion mobility technique that separates gas-phase ions by their behavior in strong and weak electric fields. FAIMS is easily interfaced with electrospray ionization and has been implemented as an additional separation mode between liquid chromatography (LC) and mass spectrometry (MS) in proteomic studies. FAIMS separation is orthogonal to both LC and MS and is used as a means of on-line fractionation to improve detection of peptides in complex samples. FAIMS improves dynamic range and concomitantly the detection limits of ions by filtering out chemical noise. FAIMS can also be used to remove interfering ion species and to select peptide charge states optimal for identification by tandem MS. Here, we review recent developments in LC-FAIMS-MS and its application to MS-based proteomics. PMID:23194268

Infrared thermography based studies on mobile phone induced heating

Science.gov (United States)

Lahiri, B. B.; Bagavathiappan, S.; Soumya, C.; Jayakumar, T.; Philip, John

2015-07-01

Here, we report the skin temperature rise due to the absorption of radio frequency (RF) energy from three handheld mobile phones using infrared thermography technique. Experiments are performed under two different conditions, viz. when the mobile phones are placed in soft touch with the skin surface and away from the skin surface. Additionally, the temperature rise of mobile phones during charging, operation and simultaneous charging and talking are monitored under different exposure conditions. It is observed that the temperature of the cheek and ear regions monotonically increased with time during the usage of mobile phones and the magnitude of the temperature rise is higher for the mobile phone with higher specific absorption rate. The increase in skin temperature is higher when the mobile phones are in contact with the skin surface due to the combined effect of absorption of RF electromagnetic power and conductive heat transfer. The increase in the skin temperature in non-contact mode is found to be within the safety limit of 1 °C. The measured temperature rise is in good agreement with theoretical predictions. The empirical equation obtained from the temperature rise on the cheek region of the subjects correlates well with the specific absorption rate of the mobile phones. Our study suggests that the use of mobile phones in non-contact mode can significantly lower the skin temperature rise during its use and hence, is safer compared to the contact mode.

Structural Analysis of a Vehicle Dynamics Model for Fault Detection and Isolation on the ROboMObil

OpenAIRE

Ho, Lok Man

2013-01-01

The ROboMObil, a mobility prototype under development at the DLR, differs from most current road vehicles with its high degree of overactuation with regards to the vehicle dynamics. This is due to the independent traction motor drives and steering actuators in each wheel, as well as one brake-by-wire actuator for each axle. Together with the large number of sensors, these provide opportunities for control and also lead to challenges for fault detection and isolation. In this study, the ROboMO...

Nontraumatic tibial polyethylene insert cone fracture in mobile-bearing posterior-stabilized total knee arthroplasty

Directory of Open Access Journals (Sweden)

Yohei Tanikake

2016-12-01

Full Text Available A 72-year-old male patient underwent mobile-bearing posterior-stabilized total knee arthroplasty for osteoarthritis. He experienced a nontraumatic polyethylene tibial insert cone fracture 27 months after surgery. Scanning electron microscopy of the fracture surface of the tibial insert cone suggested progress of ductile breaking from the posterior toward the anterior of the cone due to repeated longitudinal bending stress, leading to fatigue breaking at the anterior side of the cone, followed by the tibial insert cone fracture at the anterior side of the cone, resulting in fracture at the base of the cone. This analysis shows the risk of tibial insert cone fracture due to longitudinal stress in mobile-bearing posterior-stabilized total knee arthroplasty in which an insert is designed to highly conform to the femoral component.

Exploring the mobility of cryoconite on High-Arctic glaciers

Science.gov (United States)

Irvine-Fynn, T. D.; Hodson, A. J.; Bridge, J. W.; Langford, H.; Anesio, A.; Ohlanders, N.; Newton, S.

2010-12-01

There has been a growing awareness of the significance of biologically active dust (cryoconite) on the energy balance of, and nutrient cycling at glacier surfaces. Moreover, researchers have estimated the mass of biological material released from glacier ice to downstream environments and ecosystems, including the melt-out of cells from emergent ice in the ablation area. However, the processes, rates and mechanisms of cryoconite mobility and transport have not been fully explored. For many smaller valley glaciers in the High-Arctic, the climate dictates only a thin (~ 1m) layer of ice at the glacier surface is at the melting point during the summer months. This surface ice is commonly characterized by an increased porosity in response to incident energy and hydraulic conditions, and has been termed the “weathering crust”. The presence of cryoconite, with its higher radiation absorption, exacerbates the weathering crust development. Thus, crucially, the transport of cryoconite is not confined to simply a ‘smooth’ ice surface, but rather also includes mobility in the near-surface ice matrix. Here, we present initial results from investigations of cryoconite transport at Midtre Lovénbreen and Longyearbreen, two north-facing valley glaciers in Svalbard (Norway). Using time-lapse imagery, we explore the transport rates of cryoconite on a glacier surface and consider the associations between mobility and meteorological conditions. Results suggest some disparity between micro-, local- and plot-scale observations of cryoconite transport: the differences imply controlling influences of cryoconite volume, ice surface topography and ice structure. While to examine the relative volumes of cryoconite exported from the glacier surface by supraglacial streams we employ flow cytometry, using SYBR-Green-II staining to identify the biological component of the suspended load. Preliminary comparisons between shallow (1m) ice cores and in-stream concentrations suggest

The importance of mobile fission products for long-term safety in the case of disposal of vitrified high-level waste and spent fuel in a clay formation

International Nuclear Information System (INIS)

Marivoet, J.; Weetjens, E.

2009-01-01

In Belgium, the possibility to dispose of high-level radioactive waste in clay formations is studied since 1976. In the PAGIS report, which was the first performance assessment of the disposal of vitrified high-level waste in a clay formation and which was published in 1988, the most important contributors to the total dose via a water well pathway were 237 Np, 135 Cs and 99 Tc. Since 1988, several elements that strongly influence the calculated doses have evolved:?the inventory of long-lived mobile fission and activation products in vitrified high-level waste has been improved; the half-life of 79 Se has been re-estimated; substantial progress has been made in the determination of migration parameters of the main fission and activation products and actinides. In recent performance assessments, the actinides and 135 Cs do not significantly contribute to the total dose, as they remain confined in the host clay formation during several millions of years due to sorption on clay minerals. Consequently, the total dose resulting from the disposal of vitrified high-level waste or spent fuel is essentially due to releases of mobile fission and activation products. On the basis of recent waste inventory data and parameter values, the most important contributors to the total dose via a water well are: in the case of disposal of spent fuel: 79 Se, 129 I, 126 Sn, 36 Cl, and 99 Tc; in the case of disposal of vitrified HLW: 79 Se, 126 Sn, 36 Cl, 129 I, and 99 Tc. Important remaining uncertainties are the transfer factors of volatile fission and activation products into the vitrified waste during reprocessing and migration parameters of Se. (author)

Automatic camera to laser calibration for high accuracy mobile mapping systems using INS

Science.gov (United States)

Goeman, Werner; Douterloigne, Koen; Gautama, Sidharta

2013-09-01

A mobile mapping system (MMS) is a mobile multi-sensor platform developed by the geoinformation community to support the acquisition of huge amounts of geodata in the form of georeferenced high resolution images and dense laser clouds. Since data fusion and data integration techniques are increasingly able to combine the complementary strengths of different sensor types, the external calibration of a camera to a laser scanner is a common pre-requisite on today's mobile platforms. The methods of calibration, nevertheless, are often relatively poorly documented, are almost always time-consuming, demand expert knowledge and often require a carefully constructed calibration environment. A new methodology is studied and explored to provide a high quality external calibration for a pinhole camera to a laser scanner which is automatic, easy to perform, robust and foolproof. The method presented here, uses a portable, standard ranging pole which needs to be positioned on a known ground control point. For calibration, a well studied absolute orientation problem needs to be solved. In many cases, the camera and laser sensor are calibrated in relation to the INS system. Therefore, the transformation from camera to laser contains the cumulated error of each sensor in relation to the INS. Here, the calibration of the camera is performed in relation to the laser frame using the time synchronization between the sensors for data association. In this study, the use of the inertial relative movement will be explored to collect more useful calibration data. This results in a better intersensor calibration allowing better coloring of the clouds and a more accurate depth mask for images, especially on the edges of objects in the scene.

A new challenge for advertising on mobile devices: Social TV

OpenAIRE

Natalia Quintas-Froufe; Ana González-Neira

2015-01-01

Mobile device advertising is a rapidly growing market due to the penetration of mobile devices in Spanish society. Advertising communication in this digital ecosystem continually poses new challenges. One of these - the subject of this proposal - is the link-up between mobile advertising with social TV. It opens up new possibilities for the development of advertising strategies on mobile devices.The aim of this paper is to describe the challenges faced by the Spanish advertising industry with...

High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

Energy Technology Data Exchange (ETDEWEB)

Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it; Barra, M.; Ciccullo, F.; Cassinese, A. [CNR-SPIN and Physics Department, University of Naples, Piazzale Tecchio 80, I-80125 Naples (Italy); Toccoli, T.; Aversa, L.; Tatti, R.; Verucchi, R. [IMEM-CNR-FBK Division of Trento, Via alla Cascata 56/C, I-38123 Povo (Italy); Iannotta, S. [IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma (Italy)

2014-04-07

In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

DEFF Research Database (Denmark)

Niu, Wei; Gan, Yulin; Christensen, Dennis Valbjørn

2017-01-01

The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel γ-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1015 cm-2. Herein, we report on the patterning...... is found to be approximately 3×1013 cm-2, much lower than that of the unpatterned sample (~1015 cm-2). Remarkably, a high electron mobility of approximately 3,600 cm2V-1s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of ~ 7×1012 cm-2, which exhibits clear Shubnikov-de Hass...... quantum oscillations. The patterned high-mobility 2DEG at the γ-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devic...

Multi-Element Free-Space Optical (FSO) Modules for Mobile-Opportunistic Networking

Science.gov (United States)

2016-11-14

due to license-free spectrum, containment of beams, inherent security, energy efficient communications, and high transmission rates. We leveraged the... wireless spectrum bands in both military and civilian settings. Recent research has shown that free- space-optical (FSO), a.k.a. optical wireless ...communications is a promising complementary approach to address the exploding mobile wireless traffic demand. The major impediment for using FSO in a

Mobile Sensing Systems

Science.gov (United States)

Macias, Elsa; Suarez, Alvaro; Lloret, Jaime

2013-01-01

Rich-sensor smart phones have made possible the recent birth of the mobile sensing research area as part of ubiquitous sensing which integrates other areas such as wireless sensor networks and web sensing. There are several types of mobile sensing: individual, participatory, opportunistic, crowd, social, etc. The object of sensing can be people-centered or environment-centered. The sensing domain can be home, urban, vehicular… Currently there are barriers that limit the social acceptance of mobile sensing systems. Examples of social barriers are privacy concerns, restrictive laws in some countries and the absence of economic incentives that might encourage people to participate in a sensing campaign. Several technical barriers are phone energy savings and the variety of sensors and software for their management. Some existing surveys partially tackle the topic of mobile sensing systems. Published papers theoretically or partially solve the above barriers. We complete the above surveys with new works, review the barriers of mobile sensing systems and propose some ideas for efficiently implementing sensing, fusion, learning, security, privacy and energy saving for any type of mobile sensing system, and propose several realistic research challenges. The main objective is to reduce the learning curve in mobile sensing systems where the complexity is very high. PMID:24351637

Mobile sensing systems.

Science.gov (United States)

Macias, Elsa; Suarez, Alvaro; Lloret, Jaime

2013-12-16

Rich-sensor smart phones have made possible the recent birth of the mobile sensing research area as part of ubiquitous sensing which integrates other areas such as wireless sensor networks and web sensing. There are several types of mobile sensing: individual, participatory, opportunistic, crowd, social, etc. The object of sensing can be people-centered or environment-centered. The sensing domain can be home, urban, vehicular… Currently there are barriers that limit the social acceptance of mobile sensing systems. Examples of social barriers are privacy concerns, restrictive laws in some countries and the absence of economic incentives that might encourage people to participate in a sensing campaign. Several technical barriers are phone energy savings and the variety of sensors and software for their management. Some existing surveys partially tackle the topic of mobile sensing systems. Published papers theoretically or partially solve the above barriers. We complete the above surveys with new works, review the barriers of mobile sensing systems and propose some ideas for efficiently implementing sensing, fusion, learning, security, privacy and energy saving for any type of mobile sensing system, and propose several realistic research challenges. The main objective is to reduce the learning curve in mobile sensing systems where the complexity is very high.

Mobile Sensing Systems

Directory of Open Access Journals (Sweden)

Elsa Macias

2013-12-01

Full Text Available Rich-sensor smart phones have made possible the recent birth of the mobile sensing research area as part of ubiquitous sensing which integrates other areas such as wireless sensor networks and web sensing. There are several types of mobile sensing: individual, participatory, opportunistic, crowd, social, etc. The object of sensing can be people-centered or environment-centered. The sensing domain can be home, urban, vehicular… Currently there are barriers that limit the social acceptance of mobile sensing systems. Examples of social barriers are privacy concerns, restrictive laws in some countries and the absence of economic incentives that might encourage people to participate in a sensing campaign. Several technical barriers are phone energy savings and the variety of sensors and software for their management. Some existing surveys partially tackle the topic of mobile sensing systems. Published papers theoretically or partially solve the above barriers. We complete the above surveys with new works, review the barriers of mobile sensing systems and propose some ideas for efficiently implementing sensing, fusion, learning, security, privacy and energy saving for any type of mobile sensing system, and propose several realistic research challenges. The main objective is to reduce the learning curve in mobile sensing systems where the complexity is very high.

Materials and device characteristics of pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP high electron mobility transistors

International Nuclear Information System (INIS)

Ballingall, J.M.; Ho, P.; Tessmer, G.J.; Martin, P.A.; Yu, T.H.; Choa, P.C.; Smith, P.M.; Duh, K.H.G.

1990-01-01

High electron mobility transistors (HEMTs) with single quantum well active layers composed of pseudomorphic InGaAs grown on GaAs and InP are establishing new standards of performance for microwave and millimeter wave applications. This is due to recent progress in the molecular beam epitaxial growth of strained InGaAs heterostructures coupled with developments in short gate length (sub-0.2 μm) device fabrication technology. This paper reviews this progress and the current state-of-the-art for materials and devices

Mobile Measurements of Methane Using High-Speed Open-Path Technology

Science.gov (United States)

Burba, G. G.; Anderson, T.; Ediger, K.; von Fischer, J.; Gioli, B.; Ham, J. M.; Hupp, J. R.; Kohnert, K.; Levy, P. E.; Polidori, A.; Pikelnaya, O.; Price, E.; Sachs, T.; Serafimovich, A.; Zondlo, M. A.; Zulueta, R. C.

2016-12-01

Methane plays a critical role in the radiation balance, chemistry of the atmosphere, and air quality. The major anthropogenic sources of CH4 include oil and gas development sites, natural gas distribution networks, landfill emissions, and agricultural production. The majority of oil and gas and urban CH4 emission occurs via variable-rate point sources or diffused spots in topographically challenging terrains (e.g., street tunnels, elevated locations at water treatment plants, vents, etc.). Locating and measuring such CH4 emissions is challenging when using traditional micrometeorological techniques, and requires development of novel approaches. Landfill CH4 emissions traditionally assessed at monthly or longer time intervals are subject to large uncertainties because of the snapshot nature of the measurements and the barometric pumping phenomenon. The majority of agricultural and natural CH4 production occurs in areas with little infrastructure or easily available grid power (e.g., rice fields, arctic and boreal wetlands, tropical mangroves, etc.). A lightweight, high-speed, high-resolution, open-path technology was recently developed for eddy covariance measurements of CH4 flux, with power consumption 30-150 times below other available technologies. It was designed to run on solar panels or a small generator and be placed in the middle of the methane-producing ecosystem without a need for grid power. Lately, this instrumentation has been utilized increasingly more frequently outside of the traditional use on stationary flux towers. These novel approaches include measurements from various moving platforms, such as cars, aircraft, and ships. Projects included mapping of concentrations and vertical profiles, leak detection and quantification, mobile emission detection from natural gas-powered cars, soil CH4 flux surveys, etc. This presentation will describe key projects utilizing the novel lightweight low-power high-resolution open-path technology, and will highlight

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

Directory of Open Access Journals (Sweden)

Shiben Hu

2018-03-01

Full Text Available In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO thin-film transistor (TFT based on alumina oxide (Al 2 O 3 passivation layer (PVL and copper (Cu source/drain electrodes (S/D. The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5–220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Mobile Probes in Mobile Learning

DEFF Research Database (Denmark)

Ørngreen, Rikke; Blomhøj, Ulla; Duvaa, Uffe

In this paper experiences from using mobile probes in educational design of a mobile learning application is presented. The probing process stems from the cultural probe method, and was influenced by qualitative interview and inquiry approaches. In the project, the mobile phone was not only acting...... as an agent for acquiring empirical data (as the situation in hitherto mobile probe settings) but was also the technological medium for which data should say something about (mobile learning). Consequently, not only the content of the data but also the ways in which data was delivered and handled, provided...... a valuable dimension for investigating mobile use. The data was collected at the same time as design activities took place and the collective data was analysed based on user experience goals and cognitive processes from interaction design and mobile learning. The mobile probe increased the knowledge base...

Predictability of Mobile Phone Associations

DEFF Research Database (Denmark)

Jensen, Bjørn Sand; Larsen, Jan; Hansen, Lars Kai

2010-01-01

Prediction and understanding of human behavior is of high importance in many modern applications and research areas ranging from context-aware services, wireless resource allocation to social sciences. In this study we collect a novel dataset using standard mobile phones and analyze how the predi...... representation, and general behavior. This is of vital interest in the development of context-aware services which rely on forecasting based on mobile phone sensors.......Prediction and understanding of human behavior is of high importance in many modern applications and research areas ranging from context-aware services, wireless resource allocation to social sciences. In this study we collect a novel dataset using standard mobile phones and analyze how...... the predictability of mobile sensors, acting as proxies for humans, change with time scale and sensor type such as GSM and WLAN. Applying recent information theoretic methods, it is demonstrated that an upper bound on predictability is relatively high for all sensors given the complete history (typically above 90...

Appendicectomies in Albanians in Greece: outcomes in a highly mobile immigrant patient population

Science.gov (United States)

2001-01-01

Background Albanian immigrants in Greece comprise a highly mobile population with unknown health care profile. We aimed to assess whether these immigrants were more or less likely to undergo laparotomy for suspected appendicitis with negative findings (negative appendicectomy), by performing a controlled study with individual (1:4) matching. We used data from 6 hospitals in the Greek prefecture of Epirus that is bordering Albania. Results Among a total of 2027 non-incidental appendicectomies for suspected appendicitis performed in 1994-1999, 30 patients with Albanian names were matched (for age, sex, time of operation and hospital) to 120 patients with Greek names. The odds for a negative appendicectomy were 3.4-fold higher (95% confidence interval [CI], 1.24-9.31, p = 0.02) in Albanian immigrants than in matched Greek-name subjects. The difference was most prominent in men (odds ratio 20.0, 95% CI, 1.41-285, p = 0.02) while it was not formally significant in women (odds ratio 1.56, 95% CI, 0.44-5.48). The odds for perforation were 1.25-fold higher in Albanian-name immigrants than in Greek-name patients (95% CI 0.44- 3.57). Conclusions Albanian immigrants in Greece are at high risk for negative appendicectomies. Socioeconomic, cultural and language parameters underlying health care inequalities in highly mobile immigrant populations need better study. PMID:11472640

High mobility and high concentration Type-III heterojunction FET

Science.gov (United States)

Tsu, R.; Fiddy, M. A.; Her, T.

2018-02-01

The PN junction was introduced in transistors by doping, resulting in high losses due to Coulomb scattering from the dopants. The MOSFET introduced carriers in the form of electrons and holes with an applied bias to the oxide barrier, resulting in carrier transfer without doping. This avoids high scattering losses and dominates the IC industries. With heterojunctions having valence-band maxima near and even above the conduction-band minimum in the formation of Type-III superlattices, very useful devices, introduced by Tsu, Sai-Halacz, and Esaki, soon followed. If the layer thicknesses are more than the carrier mean-free-path, incoherent scattering results in the formation of carrier transfer via diffusion instead of opening up new energy gaps. The exploitation of carriers without scattering represents a new and significant opportunity in what we call a Broken Gap Heterojunction FET.

Dynamic Trust Management for Mobile Networks and Its Applications

Science.gov (United States)

Bao, Fenye

2013-01-01

Trust management in mobile networks is challenging due to dynamically changing network environments and the lack of a centralized trusted authority. In this dissertation research, we "design" and "validate" a class of dynamic trust management protocols for mobile networks, and demonstrate the utility of dynamic trust management…

Middleware for multi-client and multi-server mobile applications

NARCIS (Netherlands)

Rocha, B.P.S.; Rezende, C.G.; Loureiro, A.A.F.

2007-01-01

With popularization of mobile computing, many developers have faced problems due to great heterogeneity of devices. To address this issue, we present in this work a middleware for multi-client and multi-server mobile applications. We assume that the middleware at the server side has no resource

Assistive device use and mobility-related factors among adults aged≥65years.

Science.gov (United States)

West, Bethany A; Bhat, Geeta; Stevens, Judy; Bergen, Gwen

2015-12-01

Examining how assistive device (cane, walker) use relates to other mobility factors can provide insight into older adults' future mobility needs. Data come from the Second Injury Control and Risk Survey, Phase 2 (ICARIS2-P2), conducted from March 2007 to May 2008. Prevalence estimates were calculated for older adults (aged ≥65) and multivariable logistic regression was used to explore associations between assistive device use and mobility-related characteristics. Compared with non-users, assistive device users were more likely to report a recent fall (AOR 12.0; 95% CI 4.9-29.3), limit walking outside due to concerns about falling (AOR 7.1; 95% CI 2.6-19.1), be unable to walk outside for 10min without resting (AOR 3.3; 95% CI 1.1-9.3), and be no longer driving (AOR 6.7; 95% CI 2.0-22.3). Assistive device users have limited mobility and an increased risk for fall injury compared with non-users. Effective fall prevention interventions, and innovative transportation options, are needed to protect the mobility of this high-risk group. Published by Elsevier Ltd.

JOINT PROCESSING OF UAV IMAGERY AND TERRESTRIAL MOBILE MAPPING SYSTEM DATA FOR VERY HIGH RESOLUTION CITY MODELING

Directory of Open Access Journals (Sweden)

A. Gruen

2013-08-01

Full Text Available Both unmanned aerial vehicle (UAV technology and Mobile Mapping Systems (MMS are important techniques for surveying and mapping. In recent years, the UAV technology has seen tremendous interest, both in the mapping community and in many other fields of application. Carrying off-the shelf digital cameras, the UAV can collect high quality aerial optical images for city modeling using photogrammetric techniques. In addition, a MMS can acquire high density point clouds of ground objects along the roads. The UAV, if operated in an aerial mode, has difficulties in acquiring information of ground objects under the trees and along façades of buildings. On the contrary, the MMS collects accurate point clouds of objects from the ground, together with stereo images, but it suffers from system errors due to loss of GPS signals, and also lacks the information of the roofs. Therefore, both technologies are complementary. This paper focuses on the integration of UAV images, MMS point cloud data and terrestrial images to build very high resolution 3D city models. The work we will show is a practical modeling project of the National University of Singapore (NUS campus, which includes buildings, some of them very high, roads and other man-made objects, dense tropical vegetation and DTM. This is an intermediate report. We present work in progress.

OS Independent Mobile Solutions for Manufacturing Execution Systems

Directory of Open Access Journals (Sweden)

Heiko Meyer

2013-12-01

Full Text Available From the suppliers' perspective it is best to provide the user of a plant with a mobile solution in the form of perfectly matching Apps for the rolled-out manufacturing execution system. Due to the extremely short innovation cycle in the mobile phone development and not least because of the first iPhone generation launch in 2007 the mobile phone market completely changed over the past four years. Today, a large percentage of the sold devices can be classified as smart phones. The paper describes an easy and reliable way to develop OS independent mobile solutions for all common smartphones based on standard technologies.

Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

International Nuclear Information System (INIS)

Webb, James B.; Tang, H.; Bardwell, J. A.; Coleridge, P.

2001-01-01

Ammonia molecular-beam epitaxy has been used to grow high-quality epilayers of GaN and AlGaN/GaN heterostructure field-effect transistor (HFET) structures on insulating 4H-SiC. The growth process, which used a magnetron sputter epitaxy deposited buffer layer of AlN, has been described previously. Ex situ pretreatment of the SiC substrate was found to be unnecessary. For a single 2.0 μm thick silicon doped epilayer, a room temperature (RT) electron mobility of 500 cm2/Vs was measured at a carrier density of 6.6x10 16 cm -3 . For the HFET structure, a room temperature mobility of 1300 cm2/Vs at a sheet carrier density of 3.3x10 12 cm -2 was observed, increasing to 11000 cm2/Vs at 77 K. The surface morphology of the layers indicated a coalesced mesa structure similar to what we observed for growth on sapphire, but with a lower overall defect density and correspondingly larger grain size. The observation of well-resolved Shubnikov de Haas oscillations at fields as low as 3 T indicated a relatively smooth interface. [copyright] 2001 American Institute of Physics

A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

NARCIS (Netherlands)

Zomer, P. J.; Dash, S. P.; Tombros, N.; van Wees, B. J.

2011-01-01

We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm(2) V-1 s(-1) at room temperature and 275 000 cm(2) V-1 s(-1) at 4.2 K. The excellent quality is supported by the early

The importance of incorporating functional habitats into conservation planning for highly mobile species in dynamic systems.

Science.gov (United States)

Webb, Matthew H; Terauds, Aleks; Tulloch, Ayesha; Bell, Phil; Stojanovic, Dejan; Heinsohn, Robert

2017-10-01

The distribution of mobile species in dynamic systems can vary greatly over time and space. Estimating their population size and geographic range can be problematic and affect the accuracy of conservation assessments. Scarce data on mobile species and the resources they need can also limit the type of analytical approaches available to derive such estimates. We quantified change in availability and use of key ecological resources required for breeding for a critically endangered nomadic habitat specialist, the Swift Parrot (Lathamus discolor). We compared estimates of occupied habitat derived from dynamic presence-background (i.e., presence-only data) climatic models with estimates derived from dynamic occupancy models that included a direct measure of food availability. We then compared estimates that incorporate fine-resolution spatial data on the availability of key ecological resources (i.e., functional habitats) with more common approaches that focus on broader climatic suitability or vegetation cover (due to the absence of fine-resolution data). The occupancy models produced significantly (P increase or decrease in the area of one functional habitat (foraging or nesting) did not necessarily correspond to an increase or decrease in the other. Thus, an increase in the extent of occupied area may not equate to improved habitat quality or function. We argue these patterns are typical for mobile resource specialists but often go unnoticed because of limited data over relevant spatial and temporal scales and lack of spatial data on the availability of key resources. Understanding changes in the relative availability of functional habitats is crucial to informing conservation planning and accurately assessing extinction risk for mobile resource specialists. © 2017 Society for Conservation Biology.

Phase III trial of high- vs. low-dose-rate interstitial radiotherapy for early mobile tongue cancer

International Nuclear Information System (INIS)

Inoue, Takehiro; Inoue, Toshihiko; Yoshida, Ken; Yoshioka, Yasuo; Shimamoto, Shigetoshi; Tanaka, Eiichi; Yamazaki, Hideya; Shimizutani, Kimishige; Teshima, Teruki; Furukawa, Souhei

2001-01-01

Purpose: Early mobile tongue cancer can be controlled with interstitial radiotherapy (ISRT). We carried out a Phase III trial to compare the treatment results of low-dose-rate (Ld) ISRT and high-dose-rate (HDR) ISRT for early mobile tongue cancer. Methods and Materials: From April 1992 through October 1996, 59 patients with cancer of the early mobile tongue were registered in this Phase III study. Eight patients were excluded from the evaluation because of violations of the requirements for this study. Of 51 eligible patients, 26 patients were treated with LDR-ISRT (70 Gy/4-9 days) and 25 patients with HDR-ISRT (60 Gy/10 fractions/1 week). For the hyperfractionated HDR-ISRT, the time interval between 2 fractions was more than 6 h. Results: Five-year local control rates of the LDR and HDR groups were 84% and 87% respectively. Nodal metastasis occurred in 6 patients in each group. Five-year nodal control rates of the LDR and HDR groups were 77% and 76%, respectively. Conclusion: Hyperfractionated HDR-ISRT for early mobile tongue cancer has the same local control compared with continuous LDR-ISRT. Hyperfractionated HDR-ISRT is an alternative treatment for continuous LDR-ISRT

Connecticut Mobility and Stability Rate Study

Science.gov (United States)

Apaloo, Francis

2014-01-01

Educators and policymakers are concerned about high student mobility, especially because mobility is associated with negative academic performance outcomes for students in particular and for schools more generally. Furthermore, student mobility may lower educational performance for at-risk and low-performing students compared with peers who remain…

Mobile Air Quality Studies (MAQS-an international project

Directory of Open Access Journals (Sweden)

Sudik Claudia

2010-04-01

Full Text Available Abstract Due to an increasing awareness of the potential hazardousness of air pollutants, new laws, rules and guidelines have recently been implemented globally. In this respect, numerous studies have addressed traffic-related exposure to particulate matter using stationary technology so far. By contrast, only few studies used the advanced technology of mobile exposure analysis. The Mobile Air Quality Study (MAQS addresses the issue of air pollutant exposure by combining advanced high-granularity spatial-temporal analysis with vehicle-mounted, person-mounted and roadside sensors. The MAQS-platform will be used by international collaborators in order 1 to assess air pollutant exposure in relation to road structure, 2 to assess air pollutant exposure in relation to traffic density, 3 to assess air pollutant exposure in relation to weather conditions, 4 to compare exposure within vehicles between front and back seat (children positions, and 5 to evaluate "traffic zone"-exposure in relation to non-"traffic zone"-exposure. Primarily, the MAQS-platform will focus on particulate matter. With the establishment of advanced mobile analysis tools, it is planed to extend the analysis to other pollutants including NO2, SO2, nanoparticles and ozone.

Design criteria for mobile phones: a teenagers perspective.

CSIR Research Space (South Africa)

Batchelor, J

2009-09-01

Full Text Available on mobile phones without blindly following criteria as observed - because there was no anchor they had to set the benchmarks for themselves. A student went even further, reflecting on long-term prospects of the project, remarking: “It is a project...-suited to mobile phones, due to obvious limitations of screen size and resolution, audio and memory restrictions. Low cost and affordable mobile phones in Africa are developing a new conduit for learning, and are gradually influencing the way we view...

Two-frequency method for measuring Hall emf in high-resistive materials with charge-carrier low mobility

International Nuclear Information System (INIS)

Aleksandrov, A.L.; Vedeneev, A.S.; Gulyaev, I.B.; Zhdan, A.G.

1982-01-01

A facility for measuring Hall emf in high-resistive materials with low mobility of charge carriers by the two-frequency method using digital synchronous integration is described. The facility permits to detect the minimum Hall emf approxamatety equat to 5 μV at approximatety equal to 1 T Ohm of the investigated.sample resistance during the measuring time of approximately equal to 2000 s. Sensitivity by Hall mobility makes up >= 0.01 cm 2 /Vxs at the same measuring time. Measuring results of the Hall emf on GaAs monocrystals, CdSe films and island film of gold are presented

Mobile phone use, school electromagnetic field levels and related symptoms: a cross-sectional survey among 2150 high school students in Izmir.

Science.gov (United States)

Durusoy, Raika; Hassoy, Hür; Özkurt, Ahmet; Karababa, Ali Osman

2017-06-02

Health outcomes of electromagnetic fields (EMF) from mobile phones and their base stations are of concern. Conducting multidisciplinary research, targeting children and exploring dose-response are recommended. Our objectives were to describe the mobile phone usage characteristics of high school students and to explore the association between mobile phone usage characteristics, high school EMF levels and self-reported symptoms. This cross-sectional study's data were collected by a survey questionnaire and by measuring school EMF levels between November 2009 and April 2011. A sample size of 2530 was calculated from a total of 20,493 students in 26 high schools and 2150 (85.0%) were included in the analysis. The frequencies of 23 symptoms were questioned and analysed according to 16 different aspects of mobile phone use and school EMF levels, exploring also dose-response. School EMF levels were measured with Aaronia Spectran HF-4060 device. Chi square and trend tests were used for univariate and logistic regression was used for multivariate analyses. Among participants, 2021 (94.0%) were using mobile phones and 129 (6.0%) were not. Among users, 49.4% were speaking mobile phone users. Dose-response relationships were observed especially for the number of calls per day, total duration of calls per day, total number of text messages per day, position and status of mobile phone at night and making calls while charging as exposures and headache, concentration difficulties, fatigue and sleep disturbances as general symptoms and warming of the ear and flushing as local symptoms. We found an association between mobile phone use and especially headache, concentration difficulties, fatigue, sleep disturbances and warming of the ear showing also dose-response. We have found limited associations between vicinity to base stations and some general symptoms; however, we did not find any association with school EMF levels. Decreasing the numbers of calls and messages, decreasing the

The Impact of Mobility on Student Performance and Teacher Practice

Science.gov (United States)

Isernhagen, Jody C.; Bulkin, Nadia

2011-01-01

This article examines the effects that high mobility can have on highly mobile students, non-mobile students, teachers, and schools, with particular focus on the effect of high mobility on academic achievement. A mixed-methods study with data collected from public schools in Nebraska during the 2007-2008 and 2008-2009 school years finds that…

Dedicated mobile high resolution prostate PET imager with an insertable transrectal probe

Science.gov (United States)

Majewski, Stanislaw; Proffitt, James

2010-12-28

A dedicated mobile PET imaging system to image the prostate and surrounding organs. The imaging system includes an outside high resolution PET imager placed close to the patient's torso and an insertable and compact transrectal probe that is placed in close proximity to the prostate and operates in conjunction with the outside imager. The two detector systems are spatially co-registered to each other. The outside imager is mounted on an open rotating gantry to provide torso-wide 3D images of the prostate and surrounding tissue and organs. The insertable probe provides closer imaging, high sensitivity, and very high resolution predominately 2D view of the prostate and immediate surroundings. The probe is operated in conjunction with the outside imager and a fast data acquisition system to provide very high resolution reconstruction of the prostate and surrounding tissue and organs.

High mobility group A1 enhances tumorigenicity of human cholangiocarcinoma and confers resistance to therapy

DEFF Research Database (Denmark)

Quintavalle, Cristina; Burmeister, Katharina; Piscuoglio, Salvatore

2017-01-01

High mobility group A1 (HMGA1) protein has been described to play an important role in numerous types of human carcinoma. By the modulation of several target genes HMGA1 promotes proliferation and epithelial-mesenchymal transition of tumor cells. However, its role in cholangiocarcinoma (CCA) has...

Sequence-specific high mobility group box factors recognize 10-12-base pair minor groove motifs

DEFF Research Database (Denmark)

van Beest, M; Dooijes, D; van De Wetering, M

2000-01-01

Sequence-specific high mobility group (HMG) box factors bind and bend DNA via interactions in the minor groove. Three-dimensional NMR analyses have provided the structural basis for this interaction. The cognate HMG domain DNA motif is generally believed to span 6-8 bases. However, alignment...

International mobility in carbon dioxide emissions

International Nuclear Information System (INIS)

Duro, Juan Antonio

2013-01-01

In this paper, we analyse the evolution of international mobility in per capita CO 2 emissions for the period 1971–2007. This concept reveals the distribution's degree of entrenchment which is fundamentally different from other distribution concepts. In particular, we use several different synthetic mobility measures in order to capture the various perceptions of mobility proposed in the literature. This approach can be seen as complementary to the dynamics of distribution approach. The empirical analysis yields the following main results. First, the evolution observed varies according to the mobility index used. Second, when broader mobility indices are used, the most recent years analysed (i.e. 2000–2007) and the 1970s appear to be the most dynamic periods. Third, their decomposition reveals the major role played by the non-high income countries group. Fourth, the calculation of fictitious indices associated with the three major decomposition components of general mobility indicates that exchange (i.e. changes in position) and dispersion (i.e. distribution effects) have typically been the most important mobility factors. Finally, there does not seem to be a clear, convincing relationship between mobility and the evolution of inequality, which to a certain extent underscores the need to carry out a differential analysis for mobility. The results obtained have some implications in terms of analysis and environmental policy. - Highlights: ► The evolution of international mobility in per capita CO 2 emissions for the period 1971–2007 is analysed. ► Several different synthetic mobility measures are used for capturing the various perceptions of mobility. ► The mobility is high and, in a significant way, without impact on distribution. ► There does not seem to be a clear, convincing relationship between mobility and the evolution of inequality. ► The results obtained have some implications in terms of analysis and environmental policy

An attempt to explain strength increase due to high loading rates

International Nuclear Information System (INIS)

Eibl, J.; Curbach, M.

1989-01-01

Most materials such as steel, concrete, ceramics, polymers, etc. show an increase of strength due to high loading rates. A number of mathematical equations are available to describe this behaviour. Nevertheless the physical reasons for these observations are still unknown. The common behaviour of a number of materials leads to the assumption that at least some explanations are material independent. Due to this reason the results of the research done at the Institute for Concrete Structures in Karlsruhe are presented in this paper to furnish new ideas for the material research due to dynamic loading. (orig.)