WorldWideScience

Sample records for high mobility due

  1. Increase in electron mobility of InGaAs/InP composite channel high electron mobility transistor structure due to SiN passivation

    Liu Yuwei; Wang Hong; Radhakrishnan, K.

    2007-01-01

    The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structure has been studied. Different from the structures with single InGaAs channel, an increase in effective mobility μ e with a negligible change of sheet carrier density n s after SiN deposition is clearly observed in the composite channel structures. The enhancement of μ e could be explained under the framework of electrons transferring from the InP sub-channel into InGaAs channel region due to the energy band bending at the surface region caused by SiN passivation, which is further confirmed by low temperature photoluminescence measurements

  2. High plant uptake of radiocesium from organic soils due to Cs mobility and low soil K content

    Sanchez, A.L.; Wright, S.M.; Naylor, C.; Kennedy, V.H.; Dodd, B.A.; Singleton, D.L.; Barnett, C.L.; Stevens, P.A.

    1999-01-01

    Post-Chernobyl experience has demonstrated that persistently high plant transfer of 137 Cs occurs from organic soils in upland and seminatural ecosystems. The soil properties influencing this transfer have been known for some time but have not been quantified. A pot experiment was conducted using 23 soils collected from selected areas of Great Britain, which were spiked with 134 Cs, and Agrostis capillaris grown for 19--45 days. The plant-to-soil 134 Cs concentration ratio (CR) varied from 0.06 to 44; log CR positively correlated to soil organic matter content (R 2 = 0.84), and CR values were highest for soils with low distribution coefficients (K d ) of 134 Cs. Soils with high organic matter contents and high concentrations of NH 4 + in solution showed high 134 Cs mobility (low K d ). The plant-to-soil solution 134 Cs ratio decreased sharply with increasing soil solution K + . A two parameter linear model, used to predict log CR from soil solution K + and K d , explained 94% of the variability in CR values. In conclusion, the high transfer of 134 Cs in organic soils is related to both the high 134 Cs mobility (low clay content and high NH 4 + concentrations) and low K availability

  3. Measurement error in mobile source air pollution exposure estimates due to residential mobility during pregnancy.

    Pennington, Audrey Flak; Strickland, Matthew J; Klein, Mitchel; Zhai, Xinxin; Russell, Armistead G; Hansen, Craig; Darrow, Lyndsey A

    2017-09-01

    Prenatal air pollution exposure is frequently estimated using maternal residential location at the time of delivery as a proxy for residence during pregnancy. We describe residential mobility during pregnancy among 19,951 children from the Kaiser Air Pollution and Pediatric Asthma Study, quantify measurement error in spatially resolved estimates of prenatal exposure to mobile source fine particulate matter (PM 2.5 ) due to ignoring this mobility, and simulate the impact of this error on estimates of epidemiologic associations. Two exposure estimates were compared, one calculated using complete residential histories during pregnancy (weighted average based on time spent at each address) and the second calculated using only residence at birth. Estimates were computed using annual averages of primary PM 2.5 from traffic emissions modeled using a Research LINE-source dispersion model for near-surface releases (RLINE) at 250 m resolution. In this cohort, 18.6% of children were born to mothers who moved at least once during pregnancy. Mobile source PM 2.5 exposure estimates calculated using complete residential histories during pregnancy and only residence at birth were highly correlated (r S >0.9). Simulations indicated that ignoring residential mobility resulted in modest bias of epidemiologic associations toward the null, but varied by maternal characteristics and prenatal exposure windows of interest (ranging from -2% to -10% bias).

  4. High mobility emissive organic semiconductor

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  5. Determination of exposure due to mobile phone base stations in an epidemiological study

    Neitzke, H. P.; Osterhoff, J.; Peklo, K.; Voigt, H.

    2007-01-01

    To investigate a supposed relationship between exposure by mobile phone base stations and well-being, an epidemiological cross sectional study is carried out within the German Mobile Telecommunication Research Program. In a parallel project, a method for the classification of electromagnetic exposure due to mobile phone base stations has been developed. This is based on the results of measurements of high frequency immissions in the interior of more than 1100 rooms and at outdoor locations, the calculation of the emissions of mobile phone antennas under free space propagation conditions and empirically determined transmission factors for the propagation of electromagnetic waves in different types of residential areas for passage of walls and windows. Standard tests (correlation-test, kappa-test, Bland-Altman-Plot, analysis of sensitivity and specificity) show that the method for computational exposure assessment developed in this project is applicable for a first classification of exposures due to mobile phone base stations in epidemiological studies. (authors)

  6. High electron mobility InN

    Jones, R. E.; Li, S. X.; Haller, E. E.; van Genuchten, H. C. M.; Yu, K. M.; Ager, J. W. III; Liliental-Weber, Z.; Walukiewicz, W.; Lu, H.; Schaff, W. J.

    2007-01-01

    Irradiation of InN films with 2 MeV He + ions followed by thermal annealing below 500 deg. C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility

  7. RISE OF MOBILITY PROGRAMS IN GERMANY DUE TO GLOBALISATION

    Eva Poppe

    2010-12-01

    Full Text Available Learning has come to the front position of the educational agenda in many countries of the world – the knowledge society, learning society, learning organization and so forth are the common terms now in the 21st century. The terms come into view in countless publications of the European Union and of many other countries in and outside the European Community. The learning society is one of the products of globalisation and knowledge, learning and education are intertwined with global capitalism. Education is considered as a servant to global capitalism, enabling trans-boundary companies to gather more effectively in the knowledge society. Learning has become to a central task in governmental education policy in many countries and it is being treated as investment – adding value to human and social capital, resulting in employability and then in work, which makes an even greater distribution to the economy, rather than being treated as a natural human process that results in the improvement of people as human beings. Profound changes are taking place as a result of globalisation that is affecting the whole of the educational institution. The objective of this contribution is to present Germany on its way to a knowledge society by examining the past and the present situation of Germany concerning mobility and furthermore mobility programs.

  8. Carotid Artery Stenting Successfully Prevents Progressive Stroke Due to Mobile Plaque

    Masahiro Oomura

    2015-05-01

    Full Text Available We report a case of progressive ischemic stroke due to a mobile plaque, in which carotid artery stenting successfully prevented further infarctions. A 78-year-old man developed acute multiple infarcts in the right hemisphere, and a duplex ultrasound showed a mobile plaque involving the bifurcation of the left common carotid artery. Maximal medical therapy failed to prevent further infarcts, and the number of infarcts increased with his neurological deterioration. Our present case suggests that the deployment of a closed-cell stent is effective to prevent the progression of the ischemic stroke due to the mobile plaque.

  9. On the Internal Structure of Mobile Barchan Sand Dunes due to Granular Processes

    Vriend, N. M.; Arran, M.; Louge, M. Y.; Hay, A. G.; Valance, A.

    2017-12-01

    In this work, we visualize the internal structure of mobile barchan desert dunes at the avalanche scale. We reveal an intriguing history of dune building using a novel combination of local sand sampling and advanced geophysical techniques resulting in high resolution measurements of individual avalanche events. Due to progressive rebuilding, granular avalanching, erosional and depositional processes, these marching barchan dunes are reworked every few years and a characteristic zebra-pattern (figure 1a), orientated parallel to the slipface at the angle of repose, appears at regular intervals. We present scientific data on the structure obtained from several mobile barchan dunes of different sizes during recent desert field campaigns (2014, 2015, 2017) in a mobile barchan dune field in Qatar (25.01°N, 51.34°E in the AlWakrah municipality). The site has been equipped with a weather station and has been regularly visited by a multidisciplinary research team in recent years (e.g. [1]). By applying high-frequency (1200 MHz) ground penetrating radar (GPR) transects across the midline (figure 1b) we map the continuous evolution of this cross-bedding at high resolution deep within the dune. The GPR reveals a slope reduction of the slipface near the base of the dune; evidence of irregular wind reversals; and the presence of a harder aeolian cap around the crest and extending to the brink. The data is supplemented with granulometry from layers stabilized by dyed water injection and uncovered by excavating vertical walls perpendicular to old buried avalanches. We attribute visible differences in water penetration between adjacent layers to fine particle segregation processes in granular avalanches. This work was made possible by the support of NPRP grant 6-059-2-023 from the Qatar National Research Fund to MYL and AGH, and a Royal Society Dorothy Hodgkin Research Fellowship to NMV. We thank Jean-Luc Métayer for performing detailed particle size distribution measurements

  10. Modeling safety risk perception due to mobile phone distraction among four wheeler drivers

    Raghunathan Rajesh

    2017-04-01

    Full Text Available Nowadays, there is an increasing trend in the use of information and communication technology devices in new vehicles. Due to these increasing service facilities, driver distraction has become a major concern for transportation safety. To reduce safety risks, it is crucial to understand how distracting activities affect driver behavior at different levels of vehicle control. The objective of this work is to understand how the vehicle and driver characteristics influence mobile phone usage while driving and associated risk perception of road safety incidents. Based on literature review, a man–machine framework for distracted driving and a mobile phone distraction model is presented. The study highlights the findings from a questionnaire survey conducted in Kerala, India. The questionnaire uses a 5-point Likert scale. Responses from 1203 four-wheeler drivers are collected using random sampling approach. The questionnaire items associated with three driver-drive characteristics are: (i Human Factors (age, experience, emotional state, behavior of driver, (ii Driver space (meter, controls, light, heat, steering, actuators of vehicle, (iii Driving conditions (speed, distance, duration, traffic, signals. This mobile phone distraction model is tested using structural equation modeling procedure. The study indicates that among the three characteristics, ‘Human Factors’ has the highest influence on perceived distraction due to mobile phones. It is also observed that safety risk perception due to mobile phone usage while driving is moderate. The practical relevance of the study is to place emphasis on behavior-based controls and to focus on strategies leveraging perception of distraction due to mobile phones while driving.

  11. An Architecture Offering Mobile Pollution Sensing with High Spatial Resolution

    Oscar Alvear

    2016-01-01

    Full Text Available Mobile sensing is becoming the best option to monitor our environment due to its ease of use, high flexibility, and low price. In this paper, we present a mobile sensing architecture able to monitor different pollutants using low-end sensors. Although the proposed solution can be deployed everywhere, it becomes especially meaningful in crowded cities where pollution values are often high, being of great concern to both population and authorities. Our architecture is composed of three different modules: a mobile sensor for monitoring environment pollutants, an Android-based device for transferring the gathered data to a central server, and a central processing server for analyzing the pollution distribution. Moreover, we analyze different issues related to the monitoring process: (i filtering captured data to reduce the variability of consecutive measurements; (ii converting the sensor output to actual pollution levels; (iii reducing the temporal variations produced by mobile sensing process; and (iv applying interpolation techniques for creating detailed pollution maps. In addition, we study the best strategy to use mobile sensors by first determining the influence of sensor orientation on the captured values and then analyzing the influence of time and space sampling in the interpolation process.

  12. Analytical admittance characterization of high mobility channel

    Mammeri, A. M.; Mahi, F. Z., E-mail: fati-zo-mahi2002@yahoo.fr [Institute of Science and Technology, University of Bechar (Algeria); Varani, L. [Institute of Electronics of the South (IES - CNRS UMR 5214), University of Montpellier (France)

    2015-03-30

    In this contribution, we investigate the small-signal admittance of the high electron mobility transistors field-effect channels under a continuation branching of the current between channel and gate by using an analytical model. The analytical approach takes into account the linearization of the 2D Poisson equation and the drift current along the channel. The analytical equations discuss the frequency dependence of the admittance at source and drain terminals on the geometrical transistor parameters.

  13. Anomalous diffusion due to hindering by mobile obstacles undergoing Brownian motion or Orstein-Ulhenbeck processes.

    Berry, Hugues; Chaté, Hugues

    2014-02-01

    In vivo measurements of the passive movements of biomolecules or vesicles in cells consistently report "anomalous diffusion," where mean-squared displacements scale as a power law of time with exponent αmovement hindrance by obstacles is often invoked. However, our understanding of how hindered diffusion leads to subdiffusion is based on diffusion amidst randomly located immobile obstacles. Here, we have used Monte Carlo simulations to investigate transient subdiffusion due to mobile obstacles with various modes of mobility. Our simulations confirm that the anomalous regimes rapidly disappear when the obstacles move by Brownian motion. By contrast, mobile obstacles with more confined displacements, e.g., Orstein-Ulhenbeck motion, are shown to preserve subdiffusive regimes. The mean-squared displacement of tracked protein displays convincing power laws with anomalous exponent α that varies with the density of Orstein-Ulhenbeck (OU) obstacles or the relaxation time scale of the OU process. In particular, some of the values we observed are significantly below the universal value predicted for immobile obstacles in two dimensions. Therefore, our results show that subdiffusion due to mobile obstacles with OU type of motion may account for the large variation range exhibited by experimental measurements in living cells and may explain that some experimental estimates are below the universal value predicted for immobile obstacles.

  14. Kinase detection with gallium nitride based high electron mobility transistors.

    Makowski, Matthew S; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena

    2013-07-01

    A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

  15. Mobilities

    to social networks, personal identities, and our relationship to the built environment. The omnipresence of mobilities within everyday life, high politics, technology, and tourism (to mention but a few) all point to a key insight harnessed by the ‘mobilities turn’. Namely that mobilities is much more than......The world is on the move. This is a widespread understanding by many inhabitants of contemporary society across the Globe. But what does it actually mean? During over one decade the ‘mobilities turn’ within the social sciences have provided a new set of insights into the repercussions of mobilities...... and environmental degradation. The spaces and territories marked by mobilities as well as the sites marked by the bypassing of such are explored. Moreover, the architectural and technological dimensions to infrastructures and sites of mobilities will be included as well as the issues of power, social exclusion...

  16. Analysis of the contended health risks due to digitally modulated mobile phone radiation

    Liesenkoetter, B.

    2002-01-01

    In the public discussion regarding the health risks of mobile phone system radiation, it is emphasized that the pulse slope of digital modulation, as defined in the GSM-Standard, will cause biological effects. In contrast, the high field strength of broadcasting and television radiation is not considered to be relevant. This paper compares quantitatively the slope of the digital GSM pulses with that of the synchronizing pulse of the television signal. The result shows clearly that the pulse spectrum of the television signal contains that of the GSM signal; in addition, the synchronizing impulse of television exhibits a much steeper slope. Considering the countrywide normal radiation intensities of television and mobile phone systems, it can be stated that the worldwide exposure to the common television signals over more than 50 years can disprove the contention of adverse biological health effects of the pulse slope of digitally modulated radiofrequency. (orig.) [de

  17. Increased mobility of metal oxide nanoparticles due to photo and thermal induced disagglomeration.

    Dongxu Zhou

    Full Text Available Significant advances have been made on our understanding of the fate and transport of engineered nanomaterials. One unexplored aspect of nanoparticle aggregation is how environmental stimuli such as light exposure and temperature variations affect the mobility of engineered nanoparticles. In this study, TiO(2, ZnO, and CeO(2 were chosen as model materials for investigating the mobility of nanoparticles under three external stimuli: heat, light and sonication. Sunlight and high power sonication were able to partially disagglomerate metal oxide clusters, but primary particles bonded by solid state necks were left intact. A cycle of temperature increase from 25°C to 65°C and then decrease back was found to disagglomerate the compact clusters in the heating phase and reagglomerate them as more open fractal structures during the cooling phase. A fractal model summing the pair-wise DLVO interactions between primary particles within two fractal agglomerates predicts weak attractions on the order of a few kT. Our study shows that common environmental stimuli such as light exposure or temperature variation can disagglomerate nanoparticle clusters and enhance their mobility in open waters. This phenomenon warrants attention since it is likely that metal oxide nanoparticles will experience these natural stimuli during their transport in the environment.

  18. Mobility overestimation due to gated contacts in organic field-effect transistors

    Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

    2016-01-01

    Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

  19. Analysis of Brain Tumors Due to the Usage of Mobile Phones

    SOOBIA SAEED

    2017-07-01

    Full Text Available The impact of cellular phone radiation on human health is the subject of current mindfulness and is an outcome of the huge increase in phone usage throughout the world. Phones use electromagnetic radiation in the microwave range. The issue is associated with wireless use for 50 minutes and above. The excessive use of mobile phone may cause brain tumors. Nowadays the most commonly developed brain tumor type is GBM (Glioblastoma in multiform and Malignant Astrocytoma. In this paper, we focus on the causes of brain tumor (cancer due to the cell phone as this increase in glucose metabolism. The aim of the study is to address the aforementioned problems associated with the cell phone. MATLAB programming to detect a brain tumor has been used. We have conducted MRI (Magnetic Resonance Imaging study to get the best images and results.

  20. Analysis of brain tumors due to the usage of mobile phones

    Saeed, S.; Noor, S.A.; Shaikh, A.

    2017-01-01

    The impact of cellular phone radiation on human health is the subject of current mindfulness and is an outcome of the huge increase in phone usage throughout the world. Phones use electromagnetic radiation in the microwave range. The issue is associated with wireless use for 50 minutes and above. The excessive use of mobile phone may cause brain tumors. Nowadays the most commonly developed brain tumor type is GBM (Glioblastoma) in multiform and Malignant Astrocytoma. In this paper, we focus on the causes of brain tumor (cancer) due to the cell phone as this increase in glucose metabolism. The aim of the study is to address the aforementioned problems associated with the cell phone. MATLAB programming to detect a brain tumor has been used. We have conducted MRI (Magnetic Resonance Imaging) study to get the best images and results. (author)

  1. Cassette pontoon bridge of high mobility

    Krzysztof KOSIUCZENKO

    2011-01-01

    Full Text Available Looking through the known and used buoyant systems, it can be remarked that the single buoyant segments are the stiff objects made of steel or plastic with variable dimensions and a complex construction. The ready to use buoyant segments, that assure the proper displacement, must have the factory leak-tightness. They take up a big transportation volume and need the assurance of the suitably abundant means of transport. Usually the heavy wheeled vehicles are needed because of high own mass of buoyant segment and large gauges. The exploitation of such constructions is very expensive. A cassette pontoon bridge, presented in this paper, is the proposition of the increase of the mobility of construction. The decrease of the single buoyant segment dimensions with the assurance of the capacity leads that more segments fit into in the same dimensions of the loading compartment of the vehicle and storage accommodation. The application of standardized joints assures the assembly efficiency with not numerous crew.

  2. Electrical injuries due to railway high tension cables.

    Reichl, M; Kay, S

    1985-08-01

    We have noted a large number of young boys being admitted to our Unit with burns due to railway high tension cables. On review of these cases we have noted: most of the burns were due to arcing, there is a high level of ignorance among the population at risk. We propose some ways of preventing these injuries.

  3. Nonmonotonous electron mobility due to structurally induced resonant coupling of subband states in an asymmetric double quantum well

    R. K. Nayak

    2015-11-01

    Full Text Available We show that sharp nonmonotic variation of low temperature electron mobility μ can be achieved in GaAs/AlxGa1-xAs barrier delta-doped double quantum well structure due to quantum mechanical transfer of subband electron wave functions within the wells. We vary the potential profile of the coupled structure as a function of the doping concentration in order to bring the subbands into resonance such that the subband energy levels anticross and the eigen states of the coupled structure equally share both the wells thereby giving rise to a dip in mobility. When the wells are of equal widths, the dip in mobility occurs under symmetric doping of the side barriers. In case of unequal well widths, the resonance can be obtained by suitable asymmetric variation of the doping concentrations. The dip in mobility becomes sharp and also the wavy nature of mobility takes a rectangular shape by increasing the barrier width. We show that the dip in mobility at resonance is governed by the interface roughness scattering through step like changes in the subband mobilities. It is also gratifying to show that the drop in mobility at the onset of occupation of second subband is substantially supressed through the quantum mechanical transfer of subband wave functions between the wells. Our results can be utilized for performance enhancement of coupled quantum well devices.

  4. High school students’ usage behavior and views about mobile phones

    Ahmet Ergin

    2014-09-01

    Full Text Available Objective: The aim of this study was to determine high school students’ usage behavior and views about mobile phones. Methods:Totally 253 (85.5% students educated at Honaz High School within the academic year 2010-2011, participated to this cross-sectional study and a questionnaire consisting of 42 questions which aimed to determine usage behavior and views about mobile phones was administered to the students. Results:The mean age of the students was 16.1 ± 1.1 years, and 56.9% of them were girl. 79.8% of students have mobile phone and 53.9% of them make daily average of over 30 minutes mobile phone calls. 76.1% of participants stated that they did not use headphones, 78.1% did not turn off their mobile phones when they are sleeping and 67.3% put it right next to them or under the pillow. 83.1% of students think mobile phones are harmful for human health, 56.7% think the base stations are harmful to human health and the environment, 91.3% think mobile phones are harmful for children, pregnant women and elderly people. Conclusion: It is found that students’ mobile phone ownership is widespread, the age of starting to use mobile phone and headphones usage is low, knowledge about the base stations is not adequate.

  5. High Thermoelectric Power Factor of High-Mobility 2D Electron Gas.

    Ohta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu

    2018-01-01

    Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower ( S ), high electrical conductivity (σ), and low thermal conductivity (κ). State-of-the-art nanostructuring techniques that significantly reduce κ have realized high-performance thermoelectric materials with a figure of merit ( ZT = S 2 ∙σ∙ T ∙κ -1 ) between 1.5 and 2. Although the power factor (PF = S 2 ∙σ) must also be enhanced to further improve ZT , the maximum PF remains near 1.5-4 mW m -1 K -2 due to the well-known trade-off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and σ of the high-mobility electron gas from -490 µV K -1 and ≈10 -1 S cm -1 to -90 µV K -1 and ≈10 4 S cm -1 , while maintaining a high carrier mobility (≈1500 cm 2 V -1 s -1 ). The maximized PF of the high-mobility electron gas is ≈9 mW m -1 K -2 , which is a two- to sixfold increase compared to state-of-the-art practical thermoelectric materials.

  6. Interference to cable television due to mobile usage in the Digital Dividend - Analysis

    Robijns, Jan; Schiphorst, Roelof

    2011-01-01

    The use of mobile applications in the 800 MHz band, which forms part of the ‘Digital Dividend’, may cause interference to cable TV signals under certain conditions. The new mobile applications (called LTE, Long Term Evolution) use frequency bands also used in cable TV networks. This paper discusses

  7. Micromagnetics on high-performance workstation and mobile computational platforms

    Fu, S.; Chang, R.; Couture, S.; Menarini, M.; Escobar, M. A.; Kuteifan, M.; Lubarda, M.; Gabay, D.; Lomakin, V.

    2015-05-01

    The feasibility of using high-performance desktop and embedded mobile computational platforms is presented, including multi-core Intel central processing unit, Nvidia desktop graphics processing units, and Nvidia Jetson TK1 Platform. FastMag finite element method-based micromagnetic simulator is used as a testbed, showing high efficiency on all the platforms. Optimization aspects of improving the performance of the mobile systems are discussed. The high performance, low cost, low power consumption, and rapid performance increase of the embedded mobile systems make them a promising candidate for micromagnetic simulations. Such architectures can be used as standalone systems or can be built as low-power computing clusters.

  8. Advertising on mobile applications

    Sobolevsky, Alexandr

    2015-01-01

    The article analyzes the new method of mobile advertising. Advertising in mobile applications - a subspecies of mobile marketing, where advertising is distributed using mobile phones and smartphones. Ad placement is going on inside of applications and games for smartphones. It has a high potential due to the large number of mobile phone users (over 6.5 billion in 2013).

  9. EEG Changes Due to Experimentally Induced 3G Mobile Phone Radiation.

    Roggeveen, Suzanne; van Os, Jim; Viechtbauer, Wolfgang; Lousberg, Richel

    2015-01-01

    The aim of this study was to investigate whether a 15-minute placement of a 3G dialing mobile phone causes direct changes in EEG activity compared to the placement of a sham phone. Furthermore, it was investigated whether placement of the mobile phone on the ear or the heart would result in different outcomes. Thirty-one healthy females participated. All subjects were measured twice: on one of the two days the mobile phone was attached to the ear, the other day to the chest. In this single-blind, cross-over design, assessments in the sham phone condition were conducted directly preceding and following the mobile phone exposure. During each assessment, EEG activity and radiofrequency radiation were recorded jointly. Delta, theta, alpha, slowbeta, fastbeta, and gamma activity was computed. The association between radiation exposure and the EEG was tested using multilevel random regression analyses with radiation as predictor of main interest. Significant radiation effects were found for the alpha, slowbeta, fastbeta, and gamma bands. When analyzed separately, ear location of the phone was associated with significant results, while chest placement was not. The results support the notion that EEG alterations are associated with mobile phone usage and that the effect is dependent on site of placement. Further studies are required to demonstrate the physiological relevance of these findings.

  10. Analysis of Environmental Costs of Mobility due to Urban Sprawl - A Modelling Study on Italian Cities

    Travisi, Chiara M.; Camagni, Roberto; Nijkamp, Peter

    2006-01-01

    A sound empirical and quantitative analysis on the relationship between different patterns of urban expansion and the environmental or social costs of mobility is rare, and the few studies available provide at best a qualitative discussion of these issues. Some recent tentative studies on the

  11. High mobility transparent conducting oxides for thin film solar cells

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  12. High level bacterial contamination of secondary school students' mobile phones.

    Kõljalg, Siiri; Mändar, Rando; Sõber, Tiina; Rööp, Tiiu; Mändar, Reet

    2017-06-01

    While contamination of mobile phones in the hospital has been found to be common in several studies, little information about bacterial abundance on phones used in the community is available. Our aim was to quantitatively determine the bacterial contamination of secondary school students' mobile phones. Altogether 27 mobile phones were studied. The contact plate method and microbial identification using MALDI-TOF mass spectrometer were used for culture studies. Quantitative PCR reaction for detection of universal 16S rRNA, Enterococcus faecalis 16S rRNA and Escherichia coli allantoin permease were performed, and the presence of tetracycline ( tet A, tet B, tet M), erythromycin ( erm B) and sulphonamide ( sul 1) resistance genes was assessed. We found a high median bacterial count on secondary school students' mobile phones (10.5 CFU/cm 2 ) and a median of 17,032 bacterial 16S rRNA gene copies per phone. Potentially pathogenic microbes ( Staphylococcus aureus , Acinetobacter spp. , Pseudomonas spp., Bacillus cereus and Neisseria flavescens ) were found among dominant microbes more often on phones with higher percentage of E. faecalis in total bacterial 16S rRNA. No differences in contamination level or dominating bacterial species between phone owner's gender and between phone types (touch screen/keypad) were found. No antibiotic resistance genes were detected on mobile phone surfaces. Quantitative study methods revealed high level bacterial contamination of secondary school students' mobile phones.

  13. Analysis of Brain Tumors Due to the Usage of Mobile Phones

    SOOBIA SAEED; ASADULLAH SHAIKH; SHABAZ AHMED NOOR

    2017-01-01

    The impact of cellular phone radiation on human health is the subject of current mindfulness and is an outcome of the huge increase in phone usage throughout the world. Phones use electromagnetic radiation in the microwave range. The issue is associated with wireless use for 50 minutes and above. The excessive use of mobile phone may cause brain tumors. Nowadays the most commonly developed brain tumor type is GBM (Glioblastoma) in multiform and Malignant Astrocytoma. In this paper, we focus ...

  14. High mobility and high concentration Type-III heterojunction FET

    Tsu, R.; Fiddy, M. A.; Her, T.

    2018-02-01

    The PN junction was introduced in transistors by doping, resulting in high losses due to Coulomb scattering from the dopants. The MOSFET introduced carriers in the form of electrons and holes with an applied bias to the oxide barrier, resulting in carrier transfer without doping. This avoids high scattering losses and dominates the IC industries. With heterojunctions having valence-band maxima near and even above the conduction-band minimum in the formation of Type-III superlattices, very useful devices, introduced by Tsu, Sai-Halacz, and Esaki, soon followed. If the layer thicknesses are more than the carrier mean-free-path, incoherent scattering results in the formation of carrier transfer via diffusion instead of opening up new energy gaps. The exploitation of carriers without scattering represents a new and significant opportunity in what we call a Broken Gap Heterojunction FET.

  15. Mobile high-voltage switchboard. Variable and uncomplicated; Mobile Hochspannungsschaltanlage. Variabel und unkompliziert in der Anwendung

    Albert, Andreas [Siemens AG, Erlangen (Germany). Sector Energy

    2009-07-13

    The mobile high-voltage switchboard ''REE-Movil 2'' for voltages up to 245 kV provides a complete and nearly autonomous switchboard in a container, a solution that has been available in the medium-voltage sector for some time already. It can be used whenever a quick replacement of a switchboard section or a temporary supplement to a switching substation is needed. The container is mounted on a trailer for maximum flexibility and mobility. (orig.)

  16. High mobility and quantum well transistors design and TCAD simulation

    Hellings, Geert

    2013-01-01

    For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

  17. [Mobile-phone e-mail use, social networks, and loneliness among Japanese high school students].

    Ogata, Yasuko; Izumi, Yukiko; Kitaike, Tadashi

    2006-07-01

    The purposes of this study were to assess the loneliness of Japanese high school students who own and use a mobile phone, to clarify the relationships between students' loneliness and their social network and frequency of use of e-mail feature, and to demonstrate relationships with a student's social network and recognition of the benefits and drawbacks of mobile phone use. The participants were 227 students from two classes in each grade of a high school in the Kanto region of Japan. Participants answered a questionnaire covering the UCLA Loneliness Scale as well as questions pertaining to the circumstances of use of their mobile phones, their social networks (e.g., number of friends), and their perceptions of the benefits and drawbacks of mobile phone use. The questionnaires of students owning a mobile phone were analyzed. Total scores for the UCLA Loneliness Scale were calculated, and factor analysis was performed for the benefits and drawbacks. A total of 220 questionnaires were returned, for which 94.1 percent of respondents owned a mobile phone. The percentages of male and female respondents were 58% and 42%. Chronbach's alpha for the UCLA Loneliness Scale (total score) was 0.87, a result similar to previous studies with high school and university students. Factor analysis revealed five factors associated with the benefits and drawbacks of mobile phone use. Multiple-regression analysis showed that 42.9% of the variance in "frequency of e-mail use" was explained by grade level, frequency of mobile phone use, and two of the five factors from the benefits and drawbacks ("difficulty of communication," and "possible sleep loss due to nighttime e-mailing"). Stepwise multiple-regression analysis revealed that 24.4% of the variance in UCLA Loneliness Score was explained by gender, the frequency of e-mail use, the number of friends and the presence/absence of a girlfriend or boyfriend. Presence of an active social network and frequent e-mailing by mobile phone reduced

  18. Highly Mobile Students: Educational Problems and Possible Solutions. ERIC/CUE Digest, Number 73.

    ERIC Clearinghouse on Urban Education, New York, NY.

    The following two types of student mobility stand out as causing educational problems: (1) inner-city mobility, which is prompted largely by fluctuations in the job market; and (2) intra-city mobility, which is caused by upward mobility or by poverty and homelessness. Most research indicates that high mobility negatively affects student…

  19. High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

    Hou, Zhipeng

    2015-12-18

    Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000cm2/Vs with a nonsaturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov–de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our findings provide a different approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

  20. Specific absorption rate variation in a brain phantom due to exposure by a 3G mobile phone: problems in dosimetry.

    Behari, J; Nirala, Jay Prakash

    2013-12-01

    A specific absorption rate (SAR) measurements system has been developed for compliance testing of personal mobile phone in a brain phantom material contained in a Perspex box. The volume of the box has been chosen corresponding to the volume of a small rat and illuminated by a 3G mobile phone frequency (1718.5 MHz), and the emitted radiation directed toward brain phantom .The induced fields in the phantom material are measured. Set up to lift the plane carrying the mobile phone is run by a pulley whose motion is controlled by a stepper motor. The platform is made to move at a pre-determined rate of 2 degrees per min limited up to 20 degrees. The measured data for induced fields in various locations are used to compute corresponding SAR values and inter comparison obtained. These data are also compared with those when the mobile phone is placed horizontally with respect to the position of the animal. The SAR data is also experimentally obtained by measuring a rise in temperature due to this mobile exposures and data compared with those obtained in the previous set. To seek a comparison with the safety criteria same set of measurements are performed in 10 g phantom material contained in a cubical box. These results are higher than those obtained with the knowledge of induced field measurements. It is concluded that SAR values are sensitive to the angular position of the moving platform and are well below the safety criteria prescribed for human exposure. The data are suggestive of having a fresh look to understand the mode of electromagnetic field -bio interaction.

  1. Interface-controlled, high-mobility organic transistors

    Jurchescu, Oana D.; Popinciuc, Mihaita; van Wees, Bart J.; Palstra, Thomas T. M.

    2007-01-01

    The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the

  2. High mobility polymer gated organic field effect transistor using zinc ...

    Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film ... At room temperature, these transistors exhibit p-type conductivity with field-effect ... Keywords. Organic semiconductor; field effect transistor; phthalocyanine; high mobility. ... The evaporation rate was kept at ...

  3. High-frequency hearing loss among mobile phone users.

    Velayutham, P; Govindasamy, Gopala Krishnan; Raman, R; Prepageran, N; Ng, K H

    2014-01-01

    The objective of this study is to assess high frequency hearing (above 8 kHz) loss among prolonged mobile phone users is a tertiary Referral Center. Prospective single blinded study. This is the first study that used high-frequency audiometry. The wide usage of mobile phone is so profound that we were unable to find enough non-users as a control group. Therefore we compared the non-dominant ear to the dominant ear using audiometric measurements. The study was a blinded study wherein the audiologist did not know which was the dominant ear. A total of 100 subjects were studied. Of the subjects studied 53% were males and 47% females. Mean age was 27. The left ear was dominant in 63%, 22% were dominant in the right ear and 15% did not have a preference. This study showed that there is significant loss in the dominant ear compared to the non-dominant ear (P mobile phone revealed high frequency hearing loss in the dominant ear (mobile phone used) compared to the non dominant ear.

  4. High mobility solution-processed hybrid light emitting transistors

    Walker, Bright; Kim, Jin Young; Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B.; Chae, Gil Jo; Cho, Shinuk; Seo, Jung Hwa

    2014-01-01

    We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm 2 /V s, current on/off ratios of >10 7 , and external quantum efficiency of 10 −2 % at 2100 cd/m 2 . These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective

  5. Filters for mobile radio from high Tc ceramic superconductors

    Peterson, G.E.; Wong, E.; Alford, N.McN.

    1990-01-01

    Mobile radio frequencies lie between 30 MHz and 1,000 MHz. This frequency range is ideal for ceramic high T c superconductors. We have designed Chebyshev, Butterworth and interdigital filters that can employ high T c superconductors in the form of rods, tubes and helices. In general, the performance of these filters at milliwatt power levels is excellent. We will describe fabrication of the superconductors and filter design

  6. Self-Management Interventions to Prevent the Secondary Condition of Pain in People with Disability Due to Mobility Limitations

    Katherine Froehlich-Grobe

    2016-01-01

    Full Text Available Introduction This focused review examines the use and effectiveness of self-management strategies in preventing or managing pain, which is among the most common secondary conditions faced by individuals with a mobility disability. Methods This focused review was part of a two-phase comprehensive scoping review. Phase I was a comprehensive scoping review of the literature targeting multiple outcomes of self-management interventions for those with mobility impairment, and Phase II was a focused review of the literature on self-management interventions that target pain as a primary or secondary outcome. Two authors searched CINAHL, PubMed, and PsyclNFO for papers published from January 1988 through August 2014 using specified search terms. Following the scoping review, the authors independently screened and selected the studies and reviewed the eligible studies, and the first author extracted data from the included studies. Results The scoping review yielded 40 studies that addressed pain self-management interventions for those living with mobility impairment. These 40 accumulated papers revealed a heterogeneous evidence base in terms of setting (clinic, community, and online, target populations, intervention duration (3 weeks to 24 months, and mode (health-care providers and lay leaders. Most of the reviewed studies reported that the self-management intervention led to significant reduction of pain over time, suggesting that self-management may be a promising approach for addressing pain experienced by people who live with mobility limitations. Discussion This review also reveals moderate-to-high bias across studies, and findings indicate that future research should enhance the methodological quality to provide stronger evidence about the effectiveness of self-management strategies for reducing pain among those with mobility impairments.

  7. High mobility ZnO nanowires for terahertz detection applications

    Liu, Huiqiang; Peng, Rufang; Chu, Shijin; Chu, Sheng

    2014-01-01

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  8. Atmospheric pollution due to mobile sources and effects on human health in Japan.

    Kagawa, J

    1994-01-01

    Following the rapid economic growth after World War II, diseases associated with environmental pollution frequently occurred due to delayed implementation of countermeasures against environmental pollution. These diseases are exemplified by Minamata disease, Itai-itai disease, chronic arsenic poisoning, and Yokkaichi asthma. After multiple episodes of these pollution-related diseases were experienced, the government and the private sector made joint efforts to reduce environmental pollution. ...

  9. Mobile marketing for mobile games

    Vu, Giang

    2016-01-01

    Highly developed mobile technology and devices enable the rise of mobile game industry and mobile marketing. Hence mobile marketing for mobile game is an essential key for a mobile game success. Even though there are many articles on marketing for mobile games, there is a need of highly understanding mobile marketing strategies, how to launch a mobile campaign for a mobile game. Besides that, it is essential to understand the relationship between mobile advertising and users behaviours. There...

  10. Comprehensive review on the development of high mobility in oxide thin film transistors

    Choi, Jun Young; Lee, Sang Yeol

    2017-11-01

    Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display (FPD), active matrix organic light emitting display (AMOLED) and active matrix liquid crystal display (AMLCD) due to their excellent electrical characteristics, such as field effect mobility ( μ FE ), subthreshold swing (S.S) and threshold voltage ( V th ). Covalent semiconductor like amorphous silicon (a-Si) is attributed to the anti-bonding and bonding states of Si hybridized orbitals. However, AOSs have not grain boundary and excellent performances originated from the unique characteristics of AOS which is the direct orbital overlap between s orbitals of neighboring metal cations. High mobility oxide TFTs have gained attractive attention during the last few years and today in display industries. It is progressively developed to increase the mobility either by exploring various oxide semiconductors or by adopting new TFT structures. Mobility of oxide thin film transistor has been rapidly increased from single digit to higher than 100 cm2/V·s in a decade. In this review, we discuss on the comprehensive review on the mobility of oxide TFTs in a decade and propose bandgap engineering and novel structure to enhance the electrical characteristics of oxide TFTs.

  11. Ultimate response time of high electron mobility transistors

    Rudin, Sergey; Rupper, Greg; Shur, Michael

    2015-01-01

    We present theoretical studies of the response time of the two-dimensional gated electron gas to femtosecond pulses. Our hydrodynamic simulations show that the device response to a short pulse or a step-function signal is either smooth or oscillating time-decay at low and high mobility, μ, values, respectively. At small gate voltage swings, U 0  = U g  − U th , where U g is the gate voltage and U th is the threshold voltage, such that μU 0 /L < v s , where L is the channel length and v s is the effective electron saturation velocity, the decay time in the low mobility samples is on the order of L 2 /(μU 0 ), in agreement with the analytical drift model. However, the decay is preceded by a delay time on the order of L/s, where s is the plasma wave velocity. This delay is the ballistic transport signature in collision-dominated devices, which becomes important during very short time periods. In the high mobility devices, the period of the decaying oscillations is on the order of the plasma wave velocity transit time. Our analysis shows that short channel field effect transistors operating in the plasmonic regime can meet the requirements for applications as terahertz detectors, mixers, delay lines, and phase shifters in ultra high-speed wireless communication circuits

  12. A possible high-mobility signal in bulk MoTe2: Temperature independent weak phonon decay

    Titao Li

    2016-11-01

    Full Text Available Layered transition metal dichalcogenides (TMDs have attracted great attention due to their non-zero bandgap for potential application in high carrier mobility devices. Recent studies demonstrate that the carrier mobility of MoTe2 would decrease by orders of magnitude when used for few-layer transistors. As phonon scattering has a significant influence on carrier mobility of layered material, here, we first reported temperature-dependent Raman spectra of bulk 2H-MoTe2 from 80 to 300 K and discovered that the phonon lifetime of both E12g and A1g vibration modes are independent with temperature. These results were explained by the weak phonon decay in MoTe2. Our results imply the existence of a carrier mobility higher than the theoretical value in intrinsic bulk 2H-MoTe2 and the feasibility to obtain MoTe2-based transistors with sufficiently high carrier mobility.

  13. Temporal reduction of the external gamma dose rate due to 137Cs mobility in sandy beaches

    Rizzotto, M.; Toso, J.; Velasco, H.; Belli, M.; Sansone, U.

    2009-01-01

    In the present paper the contribution to the external gamma dose rate due o 137 Cs in soil as a function of time is presented. Sampling sites were elected along the Calabria and Basilicata Regions coastal beaches (southern art of Italy) to assess the external gamma dose rate in air, 1 m above the round level. A convection-dispersion model, with constant parameters was sed to approximate the radiocesium soil vertical migration. The model was calibrated using the initial 137 Cs activity deposition in this region Chernobyl fallout) and 137 Cs activity concentration down the soil profile, measured 10 years later. The dispersion coefficient and the advection velocity values, were respectively: 2.17 cm 2 y -1 and 0.32 cm -1 . The Radionuclide Software Package (RSP), which uses a Monte Carlo simulation code, was used to determine the primary 137 Cs gamma dose contribution in air 1 m above the ground surface. The resulting 137 Cs external dose rate ranged from 0.42 nGy h -1 in 1986, to 0.05 nGy h -1 in 007. (author)

  14. Japanese high school students' usage of mobile phones while cycling.

    Ichikawa, Masao; Nakahara, Shinji

    2008-03-01

    To investigate the perception and actual use of mobile phones among Japanese high school students while riding their bicycles, and their experience of bicycle crash/near-crash. A questionnaire survey was carried out at high schools that were, at the time of the survey, commissioned by the National Agency for the Advancement of Sports and Health to conduct school safety research. In the survey, we found that mobile phone use while riding a bicycle was quite common among the students during their commute, but those who have a higher perception of danger in this practice, and those who perceived that this practice is prohibited, were less likely to engage in this practice. Male students and students commuting to school by bicycle only were more likely to have used phones while riding. There was a significant relationship between phone usage while riding a bicycle and the experience of bicycle crash/near-crash, although its causality was not established. Bicycle crash/near-crash experienced while using a phone was less prevalent among the students who had a higher perception of danger in phone usage while riding, students who perceived that this practice is prohibited, and students with a shorter travel time by bicycle during the commute. Since mobile phone use while riding a bicycle potentially increases crash risk among cyclists, student bicycle commuters should be made aware of this risk. Moreover, they should be informed that cyclists' phone usage while riding is prohibited according to the road traffic law.

  15. Mobile learning and high-lighting language education

    Vinther, Jane

    Mobile learning and high-profiling language education. The number of students learning a second or foreign language and participating in instruction in languages other than English has been in decline for some time. There seems to be such a general tendency across nations albeit for a variety...... of reasons idiosyncratic to the particular national conditions. This paper gives an account of a diversified national project designed to infuse foreign language learning classes in upper secondary schools in Denmark with renewed enthusiasm through systematically experimenting with the new media by taking...... advantage of the social side in their application. The aim has been to make language classes attractive and relevant and to highlight the attractiveness and fun in learning through web 2.0 and mobile units. The overall project was supported by the Danish ministry of education as well as the individual...

  16. Sows with high milk production had both a high feed intake and high body mobilization

    Strathe, A. V.; Bruun, T. S.; Hansen, C. F.

    2017-01-01

    Selection for increased litter size have generated hyper-prolific sows that nurses large litters, however limited knowledge is available regarding the connection between milk production, feed intake and body mobilization of these modern sows. The aim of the current study was to determine what...... be explained by a relatively higher proportion of their body reserves being mobilized compared with multiparous sows. The ADG of the litter was positively related by ADFI of the sows, litter size and BW loss and increasing the ADFI with 1 kg/day throughout lactation likely increased the ADG of the litter...... characterized sows with high milk production and nursing large litters, differences between sows of different parities and effects of lactational performance on next reproductive cycle. In total 565 sows (parity 1 to 4) were studied from 7 days before farrowing until weaning. On day 2 postpartum litters were...

  17. High Speed Mobility Through On-Demand Aviation

    Moore, Mark D.; Goodrich, Ken; Viken, Jeff; Smith, Jeremy; Fredericks, Bill; Trani, Toni; Barraclough, Jonathan; German, Brian; Patterson, Michael

    2013-01-01

    automobiles. ?? Community Noise: Hub and smaller GA airports are facing increasing noise restrictions, and while commercial airliners have dramatically decreased their community noise footprint over the past 30 years, GA aircraft noise has essentially remained same, and moreover, is located in closer proximity to neighborhoods and businesses. ?? Operating Costs: GA operating costs have risen dramatically due to average fuel costs of over $6 per gallon, which has constrained the market over the past decade and resulted in more than 50% lower sales and 35% less yearly operations. Infusion of autonomy and electric propulsion technologies can accomplish not only a transformation of the GA market, but also provide a technology enablement bridge for both larger aircraft and the emerging civil Unmanned Aerial Systems (UAS) markets. The NASA Advanced General Aviation Transport Experiments (AGATE) project successfully used a similar approach to enable the introduction of primary composite structures and flat panel displays in the 1990s, establishing both the technology and certification standardization to permit quick adoption through partnerships with industry, academia, and the Federal Aviation Administration (FAA). Regional and airliner markets are experiencing constant pressure to achieve decreasing levels of community emissions and noise, while lowering operating costs and improving safety. But to what degree can these new technology frontiers impact aircraft safety, the environment, operations, cost, and performance? Are the benefits transformational enough to fundamentally alter aircraft competiveness and productivity to permit much greater aviation use for high speed and On-Demand Mobility (ODM)? These questions were asked in a Zip aviation system study named after the Zip Car, an emerging car-sharing business model. Zip Aviation investigates the potential to enable new emergent markets for aviation that offer "more flexibility than the existing transportation solutions

  18. Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

    Lee, Jongkyong; Gang, Suhyun; Jo, Yongcheol; Kim, Jongmin; Woo, Hyeonseok; Han, Jaeseok; Kim, Hyungsang; Im, Hyunsik

    2014-01-01

    We have investigated the temperature dependence of ballistic mobility in a 100 nm-long InGaAs/InAlAs metamorphic high-electron-mobility transistor designed for millimeter-wavelength RF applications. To extract the temperature dependence of quasi-ballistic mobility, our experiment involves measurements of the effective mobility in the low-bias linear region of the transistor and of the collision-dominated Hall mobility using a gated Hall bar of the same epitaxial structure. The data measured from the experiment are consistent with that of modeled ballistic mobility based on ballistic transport theory. These results advance the understanding of ballistic transport in various transistors with a nano-scale channel length that is comparable to the carrier's mean free path in the channel.

  19. Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator

    Shrestha, K.; Chou, M.; Graf, D.; Yang, H. D.; Lorenz, B.; Chu, C. W.

    2017-05-01

    Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge-carrier concentrations. At low charge-carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge-carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large nonsaturating magnetoresistance and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge-carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge-carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magnetoelectric sensors and memory devices.

  20. Allergic contact dermatitis due to highly reactive halogenated compounds

    Pickering, F C; Ive, F A

    1983-11-01

    Ten cases of dermatitis in a fine organic chemicals plant are reported. These cases were all due to exposure to chemical compounds with reactive bromine or chlorine atoms. This type of chemical is always extremely irritant, but evidence is put forward to suggest that these cases were the result of allergic sensitization. Chemicals with reactive halogen atoms should always be handled with extreme care and patch testing should be approached with caution.

  1. Gravel Mobility in a High Sand Content Riverbed

    Haschenburger, J. K.

    2017-12-01

    In sand-gravel channels, sand may modify gravel transport by changing conditions of entrainment and promoting longer displacements or gravel may inhibit sand transport if concentrated into distinct deposits, which restrict sand supply with consequences for migrating bedform size or form. This study reports on gravel mobility in the lower San Antonio River, Texas, where gravel content in the bed material ranges from about 1% to more than 20%. Sediment transport observations were collected at three U.S. Geological Survey gauging stations by deploying a Helley-Smith sampler with a 0.2 mm mesh bag from which transport rates and mobile grain sizes were determined. The flow rates sampled translate into an annual exceedance expectation from 0.2% to 98%. Gravel transport rates are generally two orders of magnitude smaller than the rates of sand transport. However, the finest gravels are transported at rates on the same order of magnitude as the coarsest sands. At all sites, the 2 and 2.8 mm fractions are transported at the lowest flow rate sampled, suggesting mobility for at least 38% to as much as 98% of the year. Fractions as large as 8 mm are mobilized at flow rates that are expected between 25% and 53% of the year. The largest fractions captured in the sampling (16 to 32 mm) require flows closer to bankfull conditions that occur no more than 0.8% of the year. Results document that some gravel sizes can be frequently transported in low gradient riverbeds with high sand content.

  2. Growth limitation of Lemna minor due to high plant density

    Driever, S.M.; Nes, van E.H.; Roijackers, R.M.M.

    2005-01-01

    The effect of high population densities on the growth rate of Lemna minor (L.) was studied under laboratory conditions at 23°C in a medium with sufficient nutrients. At high population densities, we found a non-linear decreasing growth rate with increasing L. minor density. Above a L. minor biomass

  3. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka; Inagaki, Makoto; Yamaguchi, Masafumi

    2012-01-01

    We report the highest mobility values above 2000 cm 2 /Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  4. High-mobility ultrathin semiconducting films prepared by spin coating.

    Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

    2004-03-18

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  5. High-mobility ultrathin semiconducting films prepared by spin coating

    Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

    2004-03-01

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  6. Random demographic household surveys in highly mobile pastoral communities in Chad.

    Weibel, Daniel; Béchir, Mahamat; Hattendorf, Jan; Bonfoh, Bassirou; Zinsstag, Jakob; Schelling, Esther

    2011-05-01

    Reliable demographic data is a central requirement for health planning and management, and for the implementation of adequate interventions. This study addresses the lack of demographic data on mobile pastoral communities in the Sahel. A total of 1081 Arab, Fulani and Gorane women and 2541 children (1336 boys and 1205 girls) were interviewed and registered by a biometric fingerprint scanner in five repeated random transect demographic and health surveys conducted from March 2007 to January 2008 in the Lake Chad region in Chad. Important determinants for the planning and implementation of household surveys among mobile pastoral communities include: environmental factors; availability of women for interviews; difficulties in defining "own" children; the need for information-education-communication campaigns; and informed consent of husbands in typically patriarchal societies. Due to their high mobility, only 5% (56/1081) of registered women were encountered twice. Therefore, it was not possible to establish a demographic and health cohort. Prospective demographic and health cohorts are the most accurate method to assess child mortality and other demographic indices. However, their feasibility in a highly mobile pastoral setting remains to be shown. Future interdisciplinary scientific efforts need to target innovative methods, tools and approaches to include marginalized communities in operational health and demographic surveillance systems.

  7. Random demographic household surveys in highly mobile pastoral communities in Chad

    Béchir, Mahamat; Hattendorf, Jan; Bonfoh, Bassirou; Zinsstag, Jakob; Schelling, Esther

    2011-01-01

    Abstract Problem Reliable demographic data is a central requirement for health planning and management, and for the implementation of adequate interventions. This study addresses the lack of demographic data on mobile pastoral communities in the Sahel. Approach A total of 1081 Arab, Fulani and Gorane women and 2541 children (1336 boys and 1205 girls) were interviewed and registered by a biometric fingerprint scanner in five repeated random transect demographic and health surveys conducted from March 2007 to January 2008 in the Lake Chad region in Chad. Local setting Important determinants for the planning and implementation of household surveys among mobile pastoral communities include: environmental factors; availability of women for interviews; difficulties in defining “own” children; the need for information-education-communication campaigns; and informed consent of husbands in typically patriarchal societies. Relevant changes Due to their high mobility, only 5% (56/1081) of registered women were encountered twice. Therefore, it was not possible to establish a demographic and health cohort. Lessons learnt Prospective demographic and health cohorts are the most accurate method to assess child mortality and other demographic indices. However, their feasibility in a highly mobile pastoral setting remains to be shown. Future interdisciplinary scientific efforts need to target innovative methods, tools and approaches to include marginalized communities in operational health and demographic surveillance systems. PMID:21556307

  8. Acquired tracheoesophageal fistula due to high intracuff pressure

    Hameed Akmal

    2008-01-01

    Full Text Available High-compliance endotracheal tube cuffs are used to prevent gas leak and also pulmonary aspiration in mechanically ventilated patients. However, the use of the usual cuff inflation volumes may cause tracheal damage and lead to tracheoesophageal fistula. Tracheostomy tube cuffs seal against the tracheal wall and prevent leakage of air around the tube, assuring that the tidal volume is delivered to the lungs. In the past, high-pressure cuffs were used, but these contributed to tracheal injury and have been replaced by high-volume, low-pressure cuffs. For long-term applications, some newer tubes have low-profile (tight to shaft cuffs that facilitate the tracheostomy tube changes by eliminating the lip that forms when standard cuffs are deflated.

  9. Pulsar high energy emission due to inverse Compton scattering

    Lyutikov, Maxim

    2013-06-15

    We discuss growing evidence that pulsar high energy is emission is generated via Inverse Compton mechanism. We reproduce the broadband spectrum of Crab pulsar, from UV to very high energy gamma-rays - nearly ten decades in energy, within the framework of the cyclotron-self-Compton model. Emission is produced by two counter-streaming beams within the outer gaps, at distances above ∼ 20 NS radii. The outward moving beam produces UV-X-ray photons via Doppler-booster cyclotron emission, and GeV photons by Compton scattering the cyclotron photons produced by the inward going beam. The scattering occurs in the deep Klein-Nishina regime, whereby the IC component provides a direct measurement of particle distribution within the magnetosphere. The required plasma multiplicity is high, ∼10{sup 6} – 10{sup 7}, but is consistent with the average particle flux injected into the pulsar wind nebula.

  10. High level of CA 125 due to large endometrioma.

    Phupong, Vorapong; Chen, Orawan; Ultchaswadi, Pornthip

    2004-09-01

    CA 125 is a tumor-associated antigen. Its high levels are usually associated with ovarian malignancies, whereas smaller increases in the levels were associated with benign gynecologic conditions. The authors report a high level of CA 125 in a case of large ovarian endometrioma. A 45-year-old nulliparous Thai woman, presented with an increase of her abdominal girth for 7 months. Transabdominal ultrasonogram demonstrated a large ovarian cyst and multiple small leiomyoma uteri, and serum CA 125 level was 1,006 U/ml. The preoperative diagnosis was ovarian cancer with leiomyoma uteri. Exploratory laparotomy was performed. There were a large right ovarian endometrioma, small left ovarian endometrioma and multiple small leiomyoma. Total abdominal hysterectomy and bilateral salpingo-oophorectomy was performed and histopathology confirmed the diagnosis of endometrioma and leiomyoma. The serum CA 125 level declined to non-detectable at the 4th week. She was well at discharge and throughout her 4th week follow-up period Although a very high level of CA 125 is associated with a malignant process, it can also be found in benign conditions such as a large endometrioma. The case emphasizes the association of high levels of CA 125 with benign gynecologic conditions.

  11. Lattice Effects Due to High Currents in PEP-II

    Decker, F.-J.; Smith, H.; Turner, J.L.; SLAC

    2005-01-01

    The very high beam currents in the PEP-II B-Factory have caused many expected and unexpected effects: Synchrotron light fans move the beam pipe and cause dispersion; higher order modes cause excessive heating, e-clouds around the positron beam blow up its beam size. Here we describe an effect where the measured dispersion of the beam in the Low Energy Ring (LER) is different at high and at low beam currents. The dispersion was iteratively lowered by making anti-symmetric orbit bumps in many sextupole duplets, checking each time with a dispersion measurement where a dispersive kick is generated. This can be done parasitically during collisions. It was a surprise when checking the low current characterization data that there is a change. Subsequent high and low current measurements confirmed the effect. One source was believed to be located far away from any synchrotron radiation in the middle of a straight (PR12), away from sextupoles and skew quadrupoles and created a dispersion wave of about 70 mm at high current while at low current it is negligible

  12. One-to-One Mobile Technology in High School Physics Classrooms: Understanding Its Use and Outcome

    Zhai, Xiaoming; Zhang, Meilan; Li, Min

    2018-01-01

    This study examined ways in which high school students used mobile devices in physics classrooms and after school, and the impact of in-class and after-school mobile technology use on their physics learning performance and interest. We collected data from 803 high school freshmen in China after they had used mobile devices for over five months. A…

  13. [Extensive injuries due to high-tension electrical current].

    Tomásek, D; Königová, R; Snupárek, Z

    1989-03-01

    The authors submit a case of severe injury with high tension electric current. They emphasize the necessity of prevention of this injury which occurs most frequently when transformer stations are not adequately safeguarded, in case of inadequate protection when approaching trolley wires on the railway track, and when safety principles are not respected during work on the railway. The authors draw attention to the importance of immediate resuscitation and multidisciplinary comprehensive care.

  14. Mobile Phone Ratiometric Imaging Enables Highly Sensitive Fluorescence Lateral Flow Immunoassays without External Optical Filters.

    Shah, Kamal G; Singh, Vidhi; Kauffman, Peter C; Abe, Koji; Yager, Paul

    2018-05-14

    Paper-based diagnostic tests based on the lateral flow immunoassay concept promise low-cost, point-of-care detection of infectious diseases, but such assays suffer from poor limits of detection. One factor that contributes to poor analytical performance is a reliance on low-contrast chromophoric optical labels such as gold nanoparticles. Previous attempts to improve the sensitivity of paper-based diagnostics include replacing chromophoric labels with enzymes, fluorophores, or phosphors at the expense of increased fluidic complexity or the need for device readers with costly optoelectronics. Several groups, including our own, have proposed mobile phones as suitable point-of-care readers due to their low cost, ease of use, and ubiquity. However, extant mobile phone fluorescence readers require costly optical filters and were typically validated with only one camera sensor module, which is inappropriate for potential point-of-care use. In response, we propose to couple low-cost ultraviolet light-emitting diodes with long Stokes-shift quantum dots to enable ratiometric mobile phone fluorescence measurements without optical filters. Ratiometric imaging with unmodified smartphone cameras improves the contrast and attenuates the impact of excitation intensity variability by 15×. Practical application was shown with a lateral flow immunoassay for influenza A with nucleoproteins spiked into simulated nasal matrix. Limits of detection of 1.5 and 2.6 fmol were attained on two mobile phones, which are comparable to a gel imager (1.9 fmol), 10× better than imaging gold nanoparticles on a scanner (18 fmol), and >2 orders of magnitude better than gold nanoparticle-labeled assays imaged with mobile phones. Use of the proposed filter-free mobile phone imaging scheme is a first step toward enabling a new generation of highly sensitive, point-of-care fluorescence assays.

  15. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

    2017-01-01

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm 2 V −1 s −1 ), which is much higher than that of MoS 2 monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm 2 V −1 s −1 ), which is higher than that of MoS 2 monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm 2 V −1 s −1 , which is much higher than that of MoS 2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  16. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Du, Juan [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Xia, Congxin, E-mail: xiacongxin@htu.edu.cn [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Liu, Yaming [Henan Institute of Science and Technology, Xinxiang 453003 (China); Li, Xueping [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Peng, Yuting [Department of Physics, University of Texas at Arlington, TX 76019 (United States); Wei, Shuyi [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China)

    2017-04-15

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is much higher than that of MoS{sub 2} monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is higher than that of MoS{sub 2} monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm{sup 2} V{sup −1} s{sup −1}, which is much higher than that of MoS{sub 2} monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  17. Thermoelectric transport properties of high mobility organic semiconductors

    Venkateshvaran, Deepak; Broch, Katharina; Warwick, Chris N.; Sirringhaus, Henning

    2016-09-01

    Transport in organic semiconductors has traditionally been investigated using measurements of the temperature and gate voltage dependent mobility of charge carriers within the channel of organic field-effect transistors (OFETs). In such measurements, the behavior of charge carrier mobility with temperature and gate voltage, studied together with carrier activation energies, provide a metric to quantify the extent of disorder within these van der Waals bonded materials. In addition to the mobility and activation energy, another potent but often-overlooked transport coefficient useful in understanding disorder is the Seebeck coefficient (also known as thermoelectric power). Fundamentally, the Seebeck coefficient represents the entropy per charge carrier in the solid state, and thus proves powerful in distinguishing materials in which charge carriers move freely from those where a high degree of disorder causes the induced carriers to remain trapped. This paper briefly covers the recent highlights in the field of organic thermoelectrics, showing how significant strides have been made both from an applied standpoint as well as from a viewpoint of fundamental thermoelectric transport physics. It shall be illustrated how thermoelectric transport parameters in organic semiconductors can be tuned over a significant range, and how this tunability facilitates an enhanced performance for heat-to-electricity conversion as well as quantifies energetic disorder and the nature of the density of states (DOS). The work of the authors shall be spotlighted in this context, illustrating how Seebeck coefficient measurements in the polymer indacenodithiophene-co-benzothiadiazole (IDTBT) known for its ultra-low degree of torsion within the polymer backbone, has a trend consistent with low disorder. 1 Finally, using examples of the small molecules C8-BTBT and C10-DNTT, it shall be discussed how the Seebeck coefficient can aid the estimation of the density and distribution of trap states

  18. High Frequency QPOs due to Black Hole Spin

    Kazanas, Demos; Fukumura, K.

    2009-01-01

    We present detailed computations of photon orbits emitted by flares at the innermost stable circular orbit (ISCO) of accretion disks around rotating black holes. We show that for sufficiently large spin parameter, i.e. a > 0.94 M, flare a sufficient number of photons arrive at an observer after multiple orbits around the black hole, to produce an "photon echo" of constant lag, i.e. independent of the relative phase between the black hole and the observer, of T approximates 14 M. This constant time delay, then, leads to a power spectrum with a QPO at a frequency nu approximates 1/14M, even for a totally random ensemble of such flares. Observation of such a QPO will provide incontrovertible evidence for the high spin of the black hole and a very accurate, independent, measurement of its mass.

  19. Charge fluctuations in high-electron-mobility transistors: a review

    Green, F.

    1993-01-01

    The quasi-two-dimensional carrier population, free to move within a near-perfect crystalline matrix, is the key to remarkable improvements in signal gain, current density and quiet operation. Current-fluctuation effects are central to all of these properties. Some of these are easily understood within linear-response theory, but other fluctuation phenomena are less tractable. In particular, nonequilibrium noise poses significant theoretical challenges, both descriptive and predictive. This paper examines a few of the basic physical issues which motivate device-noise theory. The structure and operation of high-electron-mobility transistor are first reviewed. The recent nonlinear fluctuation theory of Stanton and Wilkins (1987) help to identify at least some of the complicated noise physics which can arise when carriers in GaAs-like conduction bands are subjected to high fields. Simple examples of fluctuation-dominated behaviour are discussed, with numerical illustrations. 20 refs., 9 figs

  20. Patterning of high mobility electron gases at complex oxide interfaces

    Trier, Felix; Prawiroatmodjo, G. E. D. K.; von Soosten, Merlin

    2015-01-01

    Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects...... of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually...... where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching...

  1. Fluorescence, Decay Time, and Structural Change of Laser Dye Cresyl Violet in Solution due to Microwave Irradiation at GSM 900/1800 Mobile Phone Frequencies

    Fuat Bayrakceken

    2012-01-01

    Full Text Available Microwave irradiation at GSM 900/1800 MHz mobile phone frequencies affects the electronic structure of cresyl violet in solution. These changes are important because laser-dye cresyl violet strongly bonds to DNA- and RNA-rich cell compounds in nerve tissues. The irradiation effects on the electronic structure of cresyl violet and its fluorescence data were all obtained experimentally at room temperature. For most laser dyes, this is not a trivial task because laser dye molecules possess a relatively complex structure. They usually consist of an extended system of conjugated double or aromatic π-bonds with attached auxochromic (electron donating groups shifting the absorption band further towards longer wavelength. Because of the intrinsically high degree of conjugation, the vibrational modes of the molecular units couple strongly with each other. We found that the fluorescence quantum yield was increased from to due to intramolecular energy hopping of cresyl violet in solution which is exposed to microwave irradiation at mobile phone frequencies, and the photonic product cannot be used as a laser dye anymore.

  2. How Does School Mobility Impact Indicators of Academic Achievement for Highly Mobile Students?

    Tanner-McBrien, Laura

    2010-01-01

    Children who are homeless or in foster care change schools more often than their non-mobile peers. The impact of school mobility increases their risk of academic failure (Evans, 1996; Ingersoll, Scamman, & Eckerling, 1989; Mao, 1997, Mehana & Reynolds, 2003; Reynolds & Wolf, 1999). Laws enforcing the right of students to remain in…

  3. GENERATION OF HIGH RESOLUTION AND HIGH PRECISION ORTHORECTIFIED ROAD IMAGERY FROM MOBILE MAPPING SYSTEM

    M. Sakamoto

    2012-07-01

    Full Text Available In this paper, a novel technique to generate a high resolution and high precision Orthorectified Road Imagery (ORI by using spatial information acquired from a Mobile Mapping System (MMS is introduced. The MMS was equipped with multiple sensors such as GPS, IMU, odometer, 2-6 digital cameras and 2-4 laser scanners. In this study, a Triangulated Irregular Network (TIN based approach, similar to general aerial photogrammetry, was adopted to build a terrain model in order to generate ORI with high resolution and high geometric precision. Compared to aerial photogrammetry, there are several issues that are needed to be addressed. ORI is generated by merging multiple time sequence images of a short section. Hence, the influence of occlusion due to stationary objects, such as telephone poles, trees, footbridges, or moving objects, such as vehicles, pedestrians are very significant. Moreover, influences of light falloff at the edges of cameras, tone adjustment among images captured from different cameras or a round trip data acquisition of the same path, and time lag between image exposure and laser point acquisition also need to be addressed properly. The proposed method was applied to generate ORI with 1 cm resolution, from the actual MMS data sets. The ORI generated by the proposed technique was more clear, occlusion free and with higher resolution compared to the conventional orthorectified coloured point cloud imagery. Moreover, the visual interpretation of road features from the ORI was much easier. In addition, the experimental results also validated the effectiveness of proposed radiometric corrections. In occluded regions, the ORI was compensated by using other images captured from different angles. The validity of the image masking process, in the occluded regions, was also ascertained.

  4. Electrical spin injection into high mobility 2D systems.

    Oltscher, M; Ciorga, M; Utz, M; Schuh, D; Bougeard, D; Weiss, D

    2014-12-05

    We report on spin injection into a high mobility 2D electron system confined at an (Al,Ga)As/GaAs interface, using (Ga,Mn)As Esaki diode contacts as spin aligners. We measured a clear nonlocal spin valve signal, which varies nonmonotonically with the applied bias voltage. The magnitude of the signal cannot be described by the standard spin drift-diffusion model, because at maximum this would require the spin polarization of the injected current to be much larger than 100%, which is unphysical. A strong correlation of the spin signal with contact width and electron mean free path suggests that ballistic transport in the 2D region below ferromagnetic contacts should be taken into account to fully describe the results.

  5. A third generation mobile high energy radiography system

    Fry, D.A.; Valdez, J.E.; Johnson, C.S.; Kimerly, H.J.; Vananne, J.R.

    1997-01-01

    A third generation mobile high energy radiographic capability has been completed and put into service by the Los Alamos National Laboratory. The system includes a 6 MeV linac x-ray generator, Co-60 gamma source, all-terrain transportation, on-board power, real-time radiography (RTR), a control center, and a complete darkroom capability. The latest version includes upgraded and enhanced portability, flexibility, all-terrain operation, all-weather operation, and ease of use features learned from experience with the first and second generation systems. All systems were required to have the following characteristics; all-terrain, all-weather operation, self-powered, USAF airlift compatible, reliable, simple to setup, easy to operate, and all components two-person portable. The systems have met these characteristics to differing degrees, as is discussed in the following section, with the latest system being the most capable

  6. Data dissemination in the wild: A testbed for high-mobility MANETs

    Vingelmann, Peter; Pedersen, Morten Videbæk; Heide, Janus

    2012-01-01

    This paper investigates the problem of efficient data dissemination in Mobile Ad hoc NETworks (MANETs) with high mobility. A testbed is presented; which provides a high degree of mobility in experiments. The testbed consists of 10 autonomous robots with mobile phones mounted on them. The mobile...... information, and the goal is to convey that information to all devices. A strategy is proposed that uses UDP broadcast transmissions and random linear network coding to facilitate the efficient exchange of information in the network. An application is introduced that implements this strategy on Nokia phones...

  7. Exploring the mobility of cryoconite on High-Arctic glaciers

    Irvine-Fynn, T. D.; Hodson, A. J.; Bridge, J. W.; Langford, H.; Anesio, A.; Ohlanders, N.; Newton, S.

    2010-12-01

    There has been a growing awareness of the significance of biologically active dust (cryoconite) on the energy balance of, and nutrient cycling at glacier surfaces. Moreover, researchers have estimated the mass of biological material released from glacier ice to downstream environments and ecosystems, including the melt-out of cells from emergent ice in the ablation area. However, the processes, rates and mechanisms of cryoconite mobility and transport have not been fully explored. For many smaller valley glaciers in the High-Arctic, the climate dictates only a thin (~ 1m) layer of ice at the glacier surface is at the melting point during the summer months. This surface ice is commonly characterized by an increased porosity in response to incident energy and hydraulic conditions, and has been termed the “weathering crust”. The presence of cryoconite, with its higher radiation absorption, exacerbates the weathering crust development. Thus, crucially, the transport of cryoconite is not confined to simply a ‘smooth’ ice surface, but rather also includes mobility in the near-surface ice matrix. Here, we present initial results from investigations of cryoconite transport at Midtre Lovénbreen and Longyearbreen, two north-facing valley glaciers in Svalbard (Norway). Using time-lapse imagery, we explore the transport rates of cryoconite on a glacier surface and consider the associations between mobility and meteorological conditions. Results suggest some disparity between micro-, local- and plot-scale observations of cryoconite transport: the differences imply controlling influences of cryoconite volume, ice surface topography and ice structure. While to examine the relative volumes of cryoconite exported from the glacier surface by supraglacial streams we employ flow cytometry, using SYBR-Green-II staining to identify the biological component of the suspended load. Preliminary comparisons between shallow (1m) ice cores and in-stream concentrations suggest

  8. High-resolution charge carrier mobility mapping of heterogeneous organic semiconductors

    Button, Steven W.; Mativetsky, Jeffrey M.

    2017-08-01

    Organic electronic device performance is contingent on charge transport across a heterogeneous landscape of structural features. Methods are therefore needed to unravel the effects of local structure on overall electrical performance. Using conductive atomic force microscopy, we construct high-resolution out-of-plane hole mobility maps from arrays of 5000 to 16 000 current-voltage curves. To demonstrate the efficacy of this non-invasive approach for quantifying and mapping local differences in electrical performance due to structural heterogeneities, we investigate two thin film test systems, one bearing a heterogeneous crystal structure [solvent vapor annealed 5,11-Bis(triethylsilylethynyl)anthradithiophene (TES-ADT)—a small molecule organic semiconductor] and one bearing a heterogeneous chemical composition [p-DTS(FBTTh2)2:PC71BM—a high-performance organic photovoltaic active layer]. TES-ADT shows nearly an order of magnitude difference in hole mobility between semicrystalline and crystalline areas, along with a distinct boundary between the two regions, while p-DTS(FBTTh2)2:PC71BM exhibits subtle local variations in hole mobility and a nanoscale domain structure with features below 10 nm in size. We also demonstrate mapping of the built-in potential, which plays a significant role in organic light emitting diode and organic solar cell operation.

  9. BEYOND THE WORK-LIFE BALANCE: FAMILY AND INTERNATIONAL MOBILITY OF THE HIGHLY SKILLED

    Núria Vergés Bosch

    2013-10-01

    Full Text Available International mobility of the highly skilled has become one of the cornerstones of development in the current knowledge society. Correspondingly, highly skilled personnel are impelled to move abroad in order to improve their competences and build influential professional networks. Mobility implies some advantages involving personal, social and family opportunities when movers experience handicaps in their country of origin. For movers, mobility becomes a new challenge beyond the work-family balance, particularly for women who usually take on the lion’s share of childcare and domestic tasks within the family. The literature exploring the gender dimension in relation to international mobility points to complex outcomes. Firstly, women are taking on a more active role in international mobility processes, even when they have family. Secondly, family and international mobility are interrelated both for men and for women, although family could become a hindrance, particularly for women. Thirdly, international mobility and women’s career development may interfere with family formation or modify traditional family values. Finally, families moving abroad constitute a challenge for public policy, since they present a new area of problems. We aim to analyse the relationship between international mobility and family based on in-depth interviews from a purposive sample of highly skilled personnel in science and technology. The results of our research suggest that international mobility of the highly skilled has effects on the family and vice versa; however, while international mobility and family are compatible, measures and policies to reconcile them are still insufficient.

  10. Dust mobilization by high-speed vapor flow under LOVA

    Matsuki, K.; Suzuki, S.; Ebara, S.; Yokomine, T.; Shimizu, A.

    2006-01-01

    In the safety analysis on the International Thermonuclear Experimental Reactor (ITER), the ingress of coolant (ICE) event and the loss of vacuum (LOVA) event are considered as one of the most serious accident. On the assumption of LOVA occurring after ICE, it is inferable that activated dusts are under the wet condition. Transport behavior of in-vessel activated dusts under the wet condition is not well understood in comparison with the dry case. In this study, we experimentally investigated the entrainment behavior of dust under LOVA after ICE. We measured dust entrainment by high-speed humid airflow with phase change. Graphite dusts and glass beads are used as substitutions for mobile inventory. The relations among the relative humidity, the entrainment of particles in the exhaust gas flow and the adhesion rate of dust particles on the pipe wall have been made clear, as has the distribution profile of dust deposition on the pipe wall. The entrainment ratio decreased as the relative humidity increased and increased as the initial pressure difference increased

  11. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.

    2014-01-01

    We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  12. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    P. C. Chang

    2014-01-01

    Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  13. Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields

    Palmer, Martin John

    2001-01-01

    Silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) for high speed, high current applications are rapidly approaching the physical and financial limits of the technology. This opens opportunities for the incorporation of materials with intrinsically better transport characteristics. An alloy of silicon and germanium is one such material that is gaining much recognition as the active component of MOSFETs and as the secondary structures (such as the gate electrode). This work examines a batch of buried channel Si 0.64 Ge 0.36 p-MOSFETs, with a minimum effective length of 0.35 μm, under different bias conditions and at different temperatures. High current and transconductance enhancements are apparent at long gate lengths. The carrier mobility is up to a factor of 2.5 times that of silicon at room temperature and 7.5 times at 4 K. A clear trend of decreasing peak mobility with decreasing silicon cap thickness is evident. Simulations show that scattering caused by the roughness of the SiO 2 /Si interface dominates, rather than alloy scattering or Si/SiGe roughness, even for a buried channel. This scattering increases with the proximity of the carriers to the interface. An increase of interface trap density with decreasing cap thickness, demonstrates that segregated germanium exists some distance into the cap and interferes with the oxidation process. This will increase scattering through increased SiO 2 /Si roughness and increased trapped charge. The short channel, high field results are comparable or slightly worse than those of silicon due to lower saturation drift velocity. However, fitting to a drift-diffusion model shows an apparent increase in saturation velocity for short channels, especially at low temperatures. This effect correlates with the low field mobility and is greater for devices containing SiGe. This is an indication of velocity overshoot, which may enhance the performance of SiGe MOSFETs at deep submicron gate lengths. (author)

  14. High pH mobile phase effects on silica-based reversed-phase high-performance liquid chromatographic columns

    Kirkland, J.J.; Straten, van M.A.; Claessens, H.A.

    1995-01-01

    Aqueous mobile phases above pH 8 often cause premature column failure, limiting the utility of silica-based columns for applications requiring high pH. Previous studies suggest that covalently bound silane ligands are hydrolyzed and removed by high-pH mobile phases. However, we found that the

  15. Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

    Pearson, J.L.

    1999-03-01

    Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

  16. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    Burke, Timothy M.

    2013-12-27

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    Burke, Timothy M.; McGehee, Michael D.

    2013-01-01

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. A compact high resolution electrospray ionization ion mobility spectrometer.

    Reinecke, T; Kirk, A T; Ahrens, A; Raddatz, C-R; Thoben, C; Zimmermann, S

    2016-04-01

    Electrospray is a commonly used ionization method for the analysis of liquids. An electrospray is a dispersed nebular of charged droplets produced under the influence of a strong electrical field. Subsequently, ions are produced in a complex process initiated by evaporation of neutral solvent molecules from these droplets. We coupled an electrospray ionization source to our previously described high resolution ion mobility spectrometer with 75 mm drift tube length and a drift voltage of 5 kV. When using a tritium source for chemical gas phase ionization, a resolving power of R=100 was reported for this setup. We replaced the tritium source and the field switching shutter by an electrospray needle, a desolvation region with variable length and a three-grid shutter for injecting ions into the drift region. Preliminary measurements with tetraalkylammonium halides show that the current configuration with the electrospray ionization source maintains the resolving power of R=100. In this work, we present the characterization of our setup. One major advantage of our setup is that the desolvation region can be heated separately from the drift region so that the temperature in the drift region stays at room temperature even up to desolvation region temperatures of 100 °C. We perform parametric studies for the investigation of the influence of temperature on solvent evaporation with different ratios of water and methanol in the solvent for different analyte substances. Furthermore, the setup is operated in negative mode and spectra of bentazon with different solvents are presented. Copyright © 2015 Elsevier B.V. All rights reserved.

  19. High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

    Hou, Zhipeng; Wang, Wenhong; Xu, Guizhou; Zhang, Xiaoming; Wei, Zhiyang; Shen, Shipeng; Liu, Enke; Yao, Yuan; Chai, Yisheng; Sun, Young; Xi, Xuekui; Wang, Wenquan; Liu, Zhongyuan; Wu, Guangheng; Zhang, Xixiang

    2015-01-01

    Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole

  20. Hold the Phone! High School Students' Perceptions of Mobile Phone Integration in the Classroom

    Thomas, Kevin; Muñoz, Marco A.

    2016-01-01

    This study examined the survey responses of 628 high school students in a large urban school district to determine their perceptions of mobile phone use in the classroom. Findings indicated that the majority of students (90.7%) were using a variety of mobile phone features for school-related work. Student support for instructional uses of phones,…

  1. Mobilities of slow electrons in low- and high-pressure gases and liquids

    Christophorou, L.G.

    1975-01-01

    Mobilities of slow (thermal and epithermal) electrons in low- (less than or approximately 500 Torr) and high- (approximately 500 to approximately 34,111 Torr) pressure gases are discussed and are related to the molecular structure and to the mobilities of thermal electrons in liquid media

  2. The design of a linear L-band high power amplifier for mobile communication satellites

    Whittaker, N.; Brassard, G.; Li, E.; Goux, P.

    1990-01-01

    A linear L-band solid state high power amplifier designed for the space segment of the Mobile Satellite (MSAT) mobile communication system is described. The amplifier is capable of producing 35 watts of RF power with multitone signal at an efficiency of 25 percent and with intermodulation products better than 16 dB below carrier.

  3. Hall mobility of free charge carriers in highly compensated p-Germanium

    Gavrilyuk, V.Yi.; Kirnas, Yi.G.; Balakyin, V.D.

    2000-01-01

    Hall mobility of free charge carriers in initial detectors Ge (Ga) is studied. It is established that an increase in the compensation factor results in the enlargement of Hall mobility in germanium highly compensated by introduction of Li ions during their drift in an electrical field

  4. High-Speed Mobile Communications in Hostile Environments

    AUTHOR|(SzGeCERN)739920; Sierra, Rodrigo; Chapron, Frederic; CERN. Geneva. IT Department

    2015-01-01

    With the inexorable increase in the use of mobile devices, wireless connectivity is expected by users anywhere, anytime. In general, this requirement is addressed in office buildings or public locations through the use of Wi-Fi technology but Wi-Fi is not well adapted for use in large experiment halls and complex underground environments, especially those where radiation exposure is an issue, such as the LHC tunnel and experimental caverns. 4G/LTE technology, however, looks to be well adapted to addressing mobility needs in such areas. We report here the studies CERN has undertaken on the use of 4G/LTE in the LHC tunnel, presenting results on the data throughput that can be achieved and discussing issues such as the provision of a consistent user experience.

  5. High available and fault tolerant mobile communications infrastructure

    Beiroumi, Mohammad Zib

    2006-01-01

    using rollback or replication techniques inapplicable. This dissertation presents a novel failure recovery approach based on a behavioral model of the communication protocols. The new recovery method is able to deal with software and hardware faults and is particularly suitable for mobile communications...... as it is the case for many recovery techniques. In addition, the method does not require any modification to mobile clients. The Communicating Extended Finite State Machine (CEFSM) is used to model the behavior of the infrastructure applications. The model based recovery scheme is integrated in the application...... and uses the client/server model to save the application state information during failure-free execution on a stable storage and retrieve them when needed during recovery. When and what information to be saved/retrieved is determined by the behavioral model of the application. To practically evaluate...

  6. Hierarchical micro-mobility management in high-speed multihop access networks

    TANG Bi-hua; MA Xiao-lei; LIU Yuan-an; GAO Jin-chun

    2006-01-01

    This article integrates the hierarchical micro-mobility management and the high-speed multihop access networks (HMAN), to accomplish the smooth handover between different access routers. The proposed soft handover scheme in the high-speed HMAN can solve the micro-mobility management problem in the access network. This article also proposes the hybrid access router (AR) advertisement scheme and AR selection algorithm, which uses the time delay and stable route to the AR as the gateway selection parameters. By simulation, the proposed micro-mobility management scheme can achieve high packet delivery fraction and improve the lifetime of network.

  7. A southern African origin and cryptic structure in the highly mobile plains zebra

    Pedersen, Casper-Emil T; Albrechtsen, Anders; Etter, Paul D.

    2018-01-01

    insights into the past phylogeography of the species. The results identify a southern African location as the most likely source region from which all extant populations expanded around 370,000 years ago. We show evidence for inclusion of the extinct and phenotypically divergent quagga (Equus quagga quagga......The plains zebra (Equus quagga) is an ecologically important species of the African savannah. It is also one of the most numerous and widely distributed ungulates, and six subspecies have been described based on morphological variation. However, the within-species evolutionary processes have been...... difficult to resolve due to its high mobility and a lack of consensus regarding the population structure. We obtained genome-wide DNA polymorphism data from more than 167,000 loci for 59 plains zebras from across the species range, encompassing all recognized extant subspecies, as well as three mountain...

  8. Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors

    Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Gwarek, W.

    2008-01-01

    Detection of 100 GHz electromagnetic radiation by a GaAs/AlGaAs high electron mobility field-effect transistor was investigated at 300 K as a function of the angle α between the direction of linear polarization of the radiation and the symmetry axis of the transistor. The angular dependence of the detected signal was found to be A 0 cos 2 (α-α 0 )+C with A 0 , α 0 , and C dependent on the electrical polarization of the transistor gate. This dependence is interpreted as due to excitation of two crossed phase-shifted oscillators. A response of the transistor chip (including bonding wires and the substrate) to 100 GHz radiation was numerically simulated. Results of calculations confirmed experimentally observed dependencies and showed that the two oscillators result from an interplay of 100 GHz currents defined by the transistor impedance together with bonding wires and substrate related modes

  9. In-plane heterostructures of Sb/Bi with high carrier mobility

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  10. Environmental stability of high-mobility indium-oxide based transparent electrodes

    Thanaporn Tohsophon

    2015-11-01

    Full Text Available Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In2O3 (ITO, H-doped In2O3 (IO:H, and Zn-doped In2O3 (IZO electrodes under damp heat (DH conditions (85 °C, 85% relative humidity. ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (Rs degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% Rs degradation, due to losses in electron Hall mobility (μHall. We propose that this degradation results from chemisorbed OH- or H2O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μHall strongly degrades during DH, the optical mobility (μoptical remains unchanged, indicating that the degradation mainly occurs at grain boundaries.

  11. Investigation of Doppler Effects on high mobility OFDM-MIMO systems with the support of High Altitude Platforms (HAPs)

    Mohammed, H. A.; Sibley, M. J. N.; Mather, P. J.

    2012-05-01

    The merging of Orthogonal Frequency Division Multiplexing (OFDM) with Multiple-input multiple-output (MIMO) is a promising mobile air interface solution for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. This paper details the design of a highly robust and efficient OFDM-MIMO system to support permanent accessibility and higher data rates to users moving at high speeds, such as users travelling on trains. It has high relevance for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. The paper begins with a comprehensive literature review focused on both technologies. This is followed by the modelling of the OFDM-MIMO physical layer based on Simulink/Matlab that takes into consideration high vehicular mobility. Then the entire system is simulated and analysed under different encoding and channel estimation algorithms. The use of High Altitude Platform system (HAPs) technology is considered and analysed.

  12. Investigation of Doppler Effects on high mobility OFDM-MIMO systems with the support of High Altitude Platforms (HAPs)

    Mohammed, H A; Sibley, M J N; Mather, P J

    2012-01-01

    The merging of Orthogonal Frequency Division Multiplexing (OFDM) with Multiple-input multiple-output (MIMO) is a promising mobile air interface solution for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. This paper details the design of a highly robust and efficient OFDM-MIMO system to support permanent accessibility and higher data rates to users moving at high speeds, such as users travelling on trains. It has high relevance for next generation wireless local area networks (WLANs) and 4G mobile cellular wireless systems. The paper begins with a comprehensive literature review focused on both technologies. This is followed by the modelling of the OFDM-MIMO physical layer based on Simulink/Matlab that takes into consideration high vehicular mobility. Then the entire system is simulated and analysed under different encoding and channel estimation algorithms. The use of High Altitude Platform system (HAPs) technology is considered and analysed.

  13. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

    Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

    2017-07-01

    High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

  14. Ultra high hole mobilities in a pure strained Ge quantum well

    Mironov, O.A.; Hassan, A.H.A.; Morris, R.J.H.; Dobbie, A.; Uhlarz, M.; Chrastina, D.; Hague, J.P.; Kiatgamolchai, S.; Beanland, R.; Gabani, S.; Berkutov, I.B.; Helm, M.; Drachenko, O.; Myronov, M.; Leadley, D.R.

    2014-01-01

    Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were − 14 T < B < + 14 T and 1.5 K < T < 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s was determined for a sheet density (p s ) 9.8 × 10 10 cm −2 (by ME-MSA) and (3.9 ± 0.2) × 10 3 cm 2 /V s for a sheet density (p s ) 5.9 × 10 10 cm −2 (by BAMS). - Highlights: • Pure strained Ge channel grown by reduced pressure chemical vapor deposition • Maximum entropy-mobility spectrum analysis • Bryan's algorithm mobility spectrum analysis • High room temperature hole drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s • Extremely high hole mobility of 1.1 × 10 6 cm 2 /V s at 12 K

  15. The 2007 click it or ticket high-visibility seat belt mobilization : traffic tech.

    2010-09-01

    In May 2007 the National Highway Traffic Safety Administration : sponsored the fifth national Click It or Ticket (CIOT) : high-visibility seat belt enforcement mobilization, which followed : the CIOT program model of earned and paid media : publicizi...

  16. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    Holmes, Kenneth

    2002-01-01

    Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

  17. Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

    Kanimozhi, Catherine K.; Yaacobi-Gross, Nir; Chou, Kang Wei; Amassian, Aram; Anthopoulos, Thomas D.; Patil, Satish P.

    2012-01-01

    In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a

  18. High Precision GNSS Guidance for Field Mobile Robots

    Ladislav Jurišica

    2012-11-01

    Full Text Available In this paper, we discuss GNSS (Global Navigation Satellite System guidance for field mobile robots. Several GNSS systems and receivers, as well as multiple measurement methods and principles of GNSS systems are examined. We focus mainly on sources of errors and investigate diverse approaches for precise measuring and effective use of GNSS systems for real-time robot localization. The main body of the article compares two GNSS receivers and their measurement methods. We design, implement and evaluate several mathematical methods for precise robot localization.

  19. Thermal Investigation of Three-Dimensional GaN-on-SiC High Electron Mobility Transistors

    2017-07-01

    University of L’Aquila, (2011). 23 Rao, H. & Bosman, G. Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors. Solid...AFRL-RY-WP-TR-2017-0143 THERMAL INVESTIGATION OF THREE- DIMENSIONAL GaN-on-SiC HIGH ELECTRON MOBILITY TRANSISTORS Qing Hao The University of Arizona...clarification memorandum dated 16 Jan 09. This report is available to the general public, including foreign nationals. Copies may be obtained from the

  20. High-energy ion tail formation due to ion acoustic turbulence in the TRIAM-1 tokamak

    Nakamura, Kazuo; Hiraki, Naoji; Nakamura, Yukio; Itoh, Satoshi [Kyushu Univ., Fukuoka (Japan). Research Inst. for Applied Mechanics

    1982-02-01

    The two-component ion energy spectra observed in the TRIAM-1 tokamak are explained as a result of the high-energy ion tail formation due to ion acoustic turbulence driven by a toroidal current pulse for turbulent heating.

  1. Interaction of a non-histone chromatin protein (high-mobility group protein 2) with DNA

    Goodwin, G.H.; Shooter, K.V.; Johns, E.W.

    1975-01-01

    The interaction with DNA of the calf thymus chromatin non-histone protein termed the high-mobility group protein 2 has been studied by sedimentation analysis in the ultracentrifuge and by measuring the binding of the 125 I-labelled protein to DNA. The results have been compared with those obtained previously by us [Eur. J. Biochem. (1974) 47, 263-270] for the interaction of high-mobility group protein 1 with DNA. Although the binding parameters are similar for these two proteins, high-mobility group protein 2 differs from high-mobility group protein 1 in that the former appears to change the shape of the DNA to a more compact form. The molecular weight of high-mobility group protein 2 has been determined by equilibrium sedimentation and a mean value of 26,000 was obtained. A low level of nuclease activity detected in one preparation of high-mobility group protein 2 has been investigated. (orig.) [de

  2. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  3. Spinal mobilization vs conventional physiotherapy in the management of chronic low back pain due to spinal disk degeneration: a randomized controlled trial.

    Krekoukias, Georgios; Gelalis, Ioannis D; Xenakis, Theodoros; Gioftsos, Georgios; Dimitriadis, Zacharias; Sakellari, Vasiliki

    2017-05-01

    The aim of the study was to examine the efficacy of spinal mobilization in subjects with low back pain (LBP) and associated spinal disk degeneration. Seventy-five subjects suffering from chronic LBP (>3 months) were randomly allocated into 3 groups of 25 subjects each. Each group received five treatment sessions with the first group receiving manual therapy (MT) (spinal mobilization), the second a sham treatment, and the third conventional physiotherapy (CP) (stretching exercises, transcutaneous electrical nerve stimulation, and massage). Subjects were assessed for their pain intensity using the numerical pain rating scale and for their self-reported disability using the Oswestry and Roland-Morris Questionnaire at baseline and after the completion of the five treatment sessions. Paired t -tests showed a significant improvement for all outcome measures in the MT and CP group ( p   0.05). MT is preferable to CP in order to reduce the pain intensity and disability in subjects with chronic LBP and associated disk degeneration. The findings of this study may lead to the establishment of spinal mobilization as one of the most preferable approaches for the management of LBP due to disk degeneration. 1b.

  4. The ion mobility spectrometer for high explosive vapor detection

    Cohen, M.J.; Stimac, R.M.; Wernlund, R.F.

    1984-01-01

    The Phemto-Chem /SUP R/ Model 100 Ion Mobility Spectrometer (IMS) operates in air and measures a number of explosive vapors at levels as low as partsper-trillion in seconds. The theory and operation of this instrument is discussed. The IMS inhales the vapor sample in a current of air and generates characteristic ions which are separated by time-of -ion drift in the atmospheric pressure gas. Quantitative results, using a dilution tunnel and standard signal generator with TNT, nitroglycerine, ethylene glycol dinitrate, cyclohexanone, methylamine, octafluoronaphthalene and hexafluorobenzene, are given. Rapid sample treatment with sample concentrations, microprocessor signal readout and chemical identification, offer a realistic opportunity of rapid explosive vapor detection at levels down to 10 -14 parts by volume in air

  5. Ionization of water clusters by fast Highly Charged Ions: Stability, fragmentation, energetics and charge mobility

    Legendre, S; Maisonny, R; Capron, M; Bernigaud, V; Cassimi, A; Gervais, B; Grandin, J-P; Huber, B A; Manil, B; Rousseau, P; Tarisien, M; Adoui, L; Lopez-Tarifa, P; AlcamI, M; MartIn, F; Politis, M-F; Penhoat, M A Herve du; Vuilleumier, R; Gaigeot, M-P; Tavernelli, I

    2009-01-01

    We study dissociative ionization of water clusters by impact of fast Ni ions. Cold Target Recoil Ion Momentum Spectroscopy (COLTRIMS) is used to obtain information about stability, energetics and charge mobility of the ionized clusters. An unusual stability of the (H 2 O) 4 H ''+ ion is observed, which could be the signature of the so called ''Eigen'' structure in gas phase water clusters. High charge mobility, responsible for the formation of protonated water clusters that dominate the mass spectrum, is evidenced. These results are supported by CPMD and TDDFT simulations, which also reveal the mechanisms of such mobility.

  6. Many Mobile Health Apps Target High-Need, High-Cost Populations, But Gaps Remain.

    Singh, Karandeep; Drouin, Kaitlin; Newmark, Lisa P; Lee, JaeHo; Faxvaag, Arild; Rozenblum, Ronen; Pabo, Erika A; Landman, Adam; Klinger, Elissa; Bates, David W

    2016-12-01

    With rising smartphone ownership, mobile health applications (mHealth apps) have the potential to support high-need, high-cost populations in managing their health. While the number of available mHealth apps has grown substantially, no clear strategy has emerged on how providers should evaluate and recommend such apps to patients. Key stakeholders, including medical professional societies, insurers, and policy makers, have largely avoided formally recommending apps, which forces patients to obtain recommendations from other sources. To help stakeholders overcome barriers to reviewing and recommending apps, we evaluated 137 patient-facing mHealth apps-those intended for use by patients to manage their health-that were highly rated by consumers and recommended by experts and that targeted high-need, high-cost populations. We found that there is a wide variety of apps in the marketplace but that few apps address the needs of the patients who could benefit the most. We also found that consumers' ratings were poor indications of apps' clinical utility or usability and that most apps did not respond appropriately when a user entered potentially dangerous health information. Going forward, data privacy and security will continue to be major concerns in the dissemination of mHealth apps. Project HOPE—The People-to-People Health Foundation, Inc.

  7. High-precision high-sensitivity clock recovery circuit for a mobile payment application

    Sun Lichong; Yan Na; Min Hao; Ren Wenliang

    2011-01-01

    This paper presents a fully integrated carrier clock recovery circuit for a mobile payment application. The architecture is based on a sampling-detection module and a charge pump phase locked loop. Compared with clock recovery in conventional 13.56 MHz transponders, this circuit can recover a high-precision consecutive carrier clock from the on/off keying (OOK) signal sent by interrogators. Fabricated by a SMIC 0.18-μm EEPROM CMOS process, this chip works from a single power supply as low as 1.5 V Measurement results show that this circuit provides 0.34% frequency deviation and 8 mV sensitivity. (semiconductor integrated circuits)

  8. Risk of Impaired Control of Spacecraft/Associated Systems and Decreased Mobility Due to Vestibular/Sensorimotor Alterations Associated with Space flight

    Bloomberg, Jacob J.; Reschke, Millard F.; Clement, Gilles R.; Mulavara, Ajitkumar P.; Taylor, Laura C..

    2015-01-01

    Control of vehicles and other complex systems is a high-level integrative function of the central nervous system (CNS). It requires well-functioning subsystem performance, including good visual acuity, eye-hand coordination, spatial and geographic orientation perception, and cognitive function. Evidence from space flight research demonstrates that the function of each of these subsystems is altered by removing gravity, a fundamental orientation reference, which is sensed by vestibular, proprioceptive, and haptic receptors and used by the CNS for spatial orientation, posture, navigation, and coordination of movements. The available evidence also shows that the degree of alteration of each subsystem depends on a number of crew- and mission-related factors. There is only limited operational evidence that these alterations cause functional impacts on mission-critical vehicle (or complex system) control capabilities. Furthermore, while much of the operational performance data collected during space flight has not been available for independent analysis, those that have been reviewed are somewhat equivocal owing to uncontrolled (and/or unmeasured) environmental and/or engineering factors. Whether this can be improved by further analysis of previously inaccessible operational data or by development of new operational research protocols remains to be seen. The true operational risks will be estimable only after we have filled the knowledge gaps and when we can accurately assess integrated performance in off-nominal operational settings (Paloski et al. 2008). Thus, our current understanding of the Risk of Impaired Control of Spacecraft/Associated Systems and Decreased Mobility Due to Vestibular/Sensorimotor Alterations Associated with Space flight is limited primarily to extrapolation of scientific research findings, and, since there are limited ground-based analogs of the sensorimotor and vestibular changes associated with space flight, observation of their functional

  9. Electron drift time in silicon drift detectors: A technique for high precision measurement of electron drift mobility

    Castoldi, A.; Rehak, P.

    1995-01-01

    This paper presents a precise absolute measurement of the drift velocity and mobility of electrons in high resistivity silicon at room temperature. The electron velocity is obtained from the differential measurement of the drift time of an electron cloud in a silicon drift detector. The main features of the transport scheme of this class of detectors are: the high uniformity of the electron motion, the transport of the signal electrons entirely contained in the high-purity bulk, the low noise timing due to the very small anode capacitance (typical value 100 fF), and the possibility to measure different drift distances, up to the wafer diameter, in the same semiconductor sample. These features make the silicon drift detector an optimal device for high precision measurements of carrier drift properties. The electron drift velocity and mobility in a 10 kΩ cm NTD n-type silicon wafer have been measured as a function of the electric field in the range of possible operation of a typical drift detector (167--633 V/cm). The electron ohmic mobility is found to be 1394 cm 2 /V s. The measurement precision is better than 1%. copyright 1995 American Institute of Physics

  10. An attempt to explain strength increase due to high loading rates

    Eibl, J.; Curbach, M.

    1989-01-01

    Most materials such as steel, concrete, ceramics, polymers, etc. show an increase of strength due to high loading rates. A number of mathematical equations are available to describe this behaviour. Nevertheless the physical reasons for these observations are still unknown. The common behaviour of a number of materials leads to the assumption that at least some explanations are material independent. Due to this reason the results of the research done at the Institute for Concrete Structures in Karlsruhe are presented in this paper to furnish new ideas for the material research due to dynamic loading. (orig.)

  11. High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

    Hou, H. W.; Liu, Z.; Teng, J. H.; Palacios, T.; Chua, S. J.

    2017-04-01

    In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.

  12. Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

    Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

    2015-07-28

    High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.

  13. High Charge Carrier Mobility Polymers for Organic Transistors

    Erdmann, Tim

    2017-01-01

    I) Introduction p-Conjugated polymers inherently combine electronic properties of inorganic semiconductor crystals and material characteristics of organic plastics due to their special molecular design. This unique combination has led to developing new unconventional optoelectronic technologies and, further, resulted in the evolution of semiconducting polymers (SCPs) as fundamental components for novel electronic devices, such as organic field-effect transistors (OFETs), organic light-emit...

  14. Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

    Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

    2004-01-01

    NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

  15. Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.

    Liu, Xinke; Ang, Kah-Wee; Yu, Wenjie; He, Jiazhu; Feng, Xuewei; Liu, Qiang; Jiang, He; Dan Tang; Wen, Jiao; Lu, Youming; Liu, Wenjun; Cao, Peijiang; Han, Shun; Wu, Jing; Liu, Wenjun; Wang, Xi; Zhu, Deliang; He, Zhubing

    2016-04-22

    Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2 high-k gate dielectric using a low temperature CMOS process. The fabricated devices were shown to demonstrate a near ideal subthreshold swing (SS) of ~69 mV/dec and a room temperature hole mobility of exceeding >400 cm(2)/Vs. These figure-of-merits are benchmarked to be the best-of-its-kind, which outperform previously reported BP transistors realized on traditional SiO2 gate dielectric. X-ray photoelectron spectroscopy (XPS) analysis further reveals the evidence of a more chemically stable BP when formed on HfO2 high-k as opposed to SiO2, which gives rise to a better interface quality that accounts for the SS and hole mobility improvement. These results unveil the potential of black phosphorus as an emerging channel material for future nanoelectronic device applications.

  16. An Investigation of the Relationship between High-School Students' Problematic Mobile Phone Use and Their Self-Esteem Levels

    Isiklar, Abdullah; Sar, Ali Haydar; Durmuscelebi, Mustafa

    2013-01-01

    Excessive mobile phone use, especially among adolescents, brings too many debates about its effects. To this end, in this study, we try to investigate the relationship between adolescents' mobile phone use and their self-esteem levels with regard to their genders. For 919 high school students, we evaluated mobile phone use concerning their…

  17. Detuning effect study of High-Q Mobile Phone Antennas

    Bahramzy, Pevand; Pedersen, Gert F.

    2015-01-01

    Number of frequency bands that have to be covered by smart phones, are ever increasing. This broadband coverage can be obtained either by using a low-Q antenna or a high-Q tunable antenna. This study investigates high-Q antennas performance when placed in proximity of the user. This study...

  18. Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

    Xu, Guizhou; Hou, Zhipeng; Wang, Yue; Zhang, Xiaoming; Zhang, Hongwei; Liu, Enke; Xi, X; Xu, Feng; Wu, Guangheng; Zhang, Xixiang; Wang, Wenhong

    2017-01-01

    The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

  19. Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

    Xu, Guizhou

    2017-03-14

    The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

  20. Record high hole mobility in polymer semiconductors via side-chain engineering.

    Kang, Il; Yun, Hui-Jun; Chung, Dae Sung; Kwon, Soon-Ki; Kim, Yun-Hi

    2013-10-09

    Charge carrier mobility is still the most challenging issue that should be overcome to realize everyday organic electronics in the near future. In this Communication, we show that introducing smart side-chain engineering to polymer semiconductors can facilitate intermolecular electronic communication. Two new polymers, P-29-DPPDBTE and P-29-DPPDTSE, which consist of a highly conductive diketopyrrolopyrrole backbone and an extended branching-position-adjusted side chain, showed unprecedented record high hole mobility of 12 cm(2)/(V·s). From photophysical and structural studies, we found that moving the branching position of the side chain away from the backbone of these polymers resulted in increased intermolecular interactions with extremely short π-π stacking distances, without compromising solubility of the polymers. As a result, high hole mobility could be achieved even in devices fabricated using the polymers at room temperature.

  1. "It's a Way of Life for Us": High Mobility and High Achievement in Department of Defense Schools.

    Smrekar, Claire E.; Owens, Debra E.

    2003-01-01

    Examines the academic performance of students in U.S. Department of Defense Education Activity (DoDEA) schools, which have high student mobility. Some observers contend that these students' high achievement is a function of their middle class family and community characteristics. Asserts that DoDEA schools simultaneously "do the right…

  2. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications.

    Makowski, M S; Kim, S; Gaillard, M; Janes, D; Manfra, M J; Bryan, I; Sitar, Z; Arellano, C; Xie, J; Collazo, R; Ivanisevic, A

    2013-02-18

    AlGaN/GaN high electron mobility transistors (HEMTs) were used to measure electrical characteristics of physisorbed gold nanoparticles (Au NPs) functionalized with alkanethiols with a terminal methyl, amine, or carboxyl functional group. Additional alkanethiol was physisorbed onto the NP treated devices to distinguish between the effects of the Au NPs and alkanethiols on HEMT operation. Scanning Kelvin probe microscopy and electrical measurements were used to characterize the treatment effects. The HEMTs were operated near threshold voltage due to the greatest sensitivity in this region. The Au NP/HEMT system electrically detected functional group differences on adsorbed NPs which is pertinent to biosensor applications.

  3. Theoretical prediction of high carrier mobility in single-walled black phosphorus nanotubes

    Li, Q. F.; Wang, H. F.; Yang, C. H.; Li, Q. Q.; Rao, W. F.

    2018-05-01

    One-dimensional semiconductors are promising materials for high-performance nanoscale devices. Using the first-principles calculations combined with deformation potential approximation, we study the electronic structures and carrier transport properties of black phosphorus nanotubes (BPNTs). It is found that both armchair and zigzag BPNTs with diameter 13.5-18.5 Å are direct bandgap semiconductors. At a similar diameter, the carrier mobility of zigzag BPNT is one order of magnitude larger than that of armchair BPNT. For armchair BPNTs, the electron mobility is about 90.70-155.33 cm2 V-1 s-1 at room temperature, which is about three times of its hole counterpart. For zigzag BPNTs, the maximum mobility can reach 2.87 ×103 cm2 V-1 s-1. Furthermore, the electronic properties can be effectively tuned by the strain. For zigzag (0,13) nanotube, there is a direct-to-indirect band gap transition at a tensile strain of about 6%. Moreover, the electron mobility is boosted sharply by one order of magnitude by applying the compressive or tensile strain. The electron mobility increases to 14.05 ×103 cm2 V-1 s-1 at a tensile strain of 9%. Our calculations highlight the tunable electronic properties and superior carrier mobility of BPNTs that are promising for interesting applications in future nano-electronic devices.

  4. Results of Sludge Mobilization Testing at Hanford High Level Waste (HLW) Tank

    STAEHR, T.W.

    2001-01-01

    Waste stored in the Tank 241-AZ-101 at the US DOE Hanford is scheduled as the initial feed for high-level waste vitrification. Tank 241-AZ-101 currently holds over 3,000,000 liters of waste made up of a settled sludge layer covered by a layer of liquid supernant. To retrieve the waste from the tank, it is necessary to mobilize and suspend the settled sludge so that the resulting slurry can be pumped from the tank for treatment and vitrification. Two 223.8-kilowatt mixer pumps have been installed in Tank 241-AZ-101 to mobilize the settled sludge layer of waste for retrieval. In May of 2000, the mixer pumps were subjected to a series of tests to determine (1) the extent to which the mixer pumps could mobilize the settle sludge layer of waste, (2) if the mixer pumps could function within operating parameters, and (3) if state-of-the-art monitoring equipment could effectively monitor and quantify the degree of sludge mobilization and suspension. This paper presents the major findings and results of the Tank 241-AZ-101 mixer pump tests, based on analysis of data and waste samples that were collected during the testing. Discussion of the results focuses on the effective cleaning radius achieved and the volume and concentration of sludge mobilized, with both one and two pumps operating in various configurations and speeds. The Tank 241-AZ-101 mixer pump tests were unique in that sludge mobilization parameters were measured using actual waste in an underground storage tank at the hanford Site. The methods and instruments that were used to measure waste mobilization parameters in Tank 241-AZ-101 can be used in other tanks. It can be concluded from the testing that the use of mixer pumps is an effective retrieval method for the mobilization of settled solids in Tank 241-AZ-101

  5. From computational discovery to experimental characterization of a high hole mobility organic crystal.

    Sokolov, Anatoliy N

    2011-08-16

    For organic semiconductors to find ubiquitous electronics applications, the development of new materials with high mobility and air stability is critical. Despite the versatility of carbon, exploratory chemical synthesis in the vast chemical space can be hindered by synthetic and characterization difficulties. Here we show that in silico screening of novel derivatives of the dinaphtho[2,3-b:2\\',3\\'-f]thieno[3,2-b]thiophene semiconductor with high hole mobility and air stability can lead to the discovery of a new high-performance semiconductor. On the basis of estimates from the Marcus theory of charge transfer rates, we identified a novel compound expected to demonstrate a theoretic twofold improvement in mobility over the parent molecule. Synthetic and electrical characterization of the compound is reported with single-crystal field-effect transistors, showing a remarkable saturation and linear mobility of 12.3 and 16 cm(2) V(-1) s(-1), respectively. This is one of the very few organic semiconductors with mobility greater than 10 cm(2) V(-1) s(-1) reported to date.

  6. Effects of the Effect of Ultra High Frequency Mobile Phone Radiation on Human Health.

    Moradi, Mosa; Naghdi, Nasrollah; Hemmati, Hamidreza; Asadi-Samani, Majid; Bahmani, Mahmoud

    2016-05-01

    Public and occupational exposure to electromagnetic fields due to the growing trend of electronic devices may cause adverse effects on human health. This paper describes the risk of mutation and sexual trauma and infertility in masculine sexual cell by mobile phone radiations. In this study, we measured the emitted dose from a radiofrequency device, such as switching high voltage at different frequencies using a scintillation detector. The switching high voltage power supply (HVPS) was built for the Single Photon Emission Computed Tomography (SPECT) system. For radiation dosimetry, we used an ALNOR scintillator that can measure gamma radiation. The simulation was performed by MATLAB software, and data from the International Commission on Non-Ionizing Radiation Protection (ICNIRP) were used to verify the simulation. We investigated the risks that result from the waves, according to a report by International Commission on Non Ionizing Radiation Protection (ICNIRP), to every organ of the body is defined by the beam and electromagnetic radiation from this electronic device on people. The results showed that the maximum personal dose over a 15-min period working at the mentioned HVPS did not exceed 0.31 μSV/h (with an aluminum shield). So, according to other sources of radiation, continuous working time of the system should not be more than 10 hours. Finally, a characteristic curve for secure working with modules at different frequencies was reported. The RF input signal to the body for maximum penetration depth (δ) and electromagnetic energy absorption rate (SAR) of biological tissue were obtained for each tissue. The results of this study and International Commission of Non Ionization Radiation Protection (ICNIRP) reports showed the people who spend more than 50 minutes a day using a cell phone could have early dementia or other thermal damage due to the burning of glucose in the brain.

  7. Effect of Ultra High Frequency Mobile Phone Radiation on Human Health

    Moradi, Mosa; Naghdi, Nasrollah; Hemmati, Hamidreza; Asadi-Samani, Majid; Bahmani, Mahmoud

    2016-01-01

    Introduction Public and occupational exposure to electromagnetic fields due to the growing trend of electronic devices may cause adverse effects on human health. This paper describes the risk of mutation and sexual trauma and infertility in masculine sexual cell by mobile phone radiations. Methods In this study, we measured the emitted dose from a radiofrequency device, such as switching high voltage at different frequencies using a scintillation detector. The switching high voltage power supply (HVPS) was built for the Single Photon Emission Computed Tomography (SPECT) system. For radiation dosimetry, we used an ALNOR scintillator that can measure gamma radiation. The simulation was performed by MATLAB software, and data from the International Commission on Non-Ionizing Radiation Protection (ICNIRP) were used to verify the simulation. Results We investigated the risks that result from the waves, according to a report by International Commission on Non Ionizing Radiation Protection (ICNIRP), to every organ of the body is defined by the beam and electromagnetic radiation from this electronic device on people. The results showed that the maximum personal dose over a 15-min period working at the mentioned HVPS did not exceed 0.31 μSV/h (with an aluminum shield). So, according to other sources of radiation, continuous working time of the system should not be more than 10 hours. Finally, a characteristic curve for secure working with modules at different frequencies was reported. The RF input signal to the body for maximum penetration depth (δ) and electromagnetic energy absorption rate (SAR) of biological tissue were obtained for each tissue. Conclusion The results of this study and International Commission of Non Ionization Radiation Protection (ICNIRP) reports showed the people who spend more than 50 minutes a day using a cell phone could have early dementia or other thermal damage due to the burning of glucose in the brain. PMID:27382458

  8. Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

    Xu, Rui; He, Daowei; Zhang, Yuhan; Wu, Bing; Liu, Fengyuan; Meng, Lan; Liu, Jun-Fang; Wu, Qisheng; Shi, Yi; Wang, Jinlan; Nie, Jia-Cai; Wang, Xinran; He, Lin

    2014-01-01

    Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and grap...

  9. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-09-05

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  10. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  11. Potential high temperature corrosion problems due to co-firing of biomass and fossil fuels

    Montgomery, Melanie; Vilhelmsen, T.; Jensen, S.A.

    2007-01-01

    Over the past years, considerable high temperature corrosion problems have been encountered when firing biomass in power plants due to the high content of potassium chloride in the deposits. Therefore to combat chloride corrosion problems co-firing of biomass with a fossil fuel has been undertaken....... This results in potassium chloride being converted to potassium sulphate in the combustion chamber and it is sulphate rich deposits that are deposited on the vulnerable metallic surfaces such as high temperature superheaters. Although this removes the problem of chloride corrosion, other corrosion mechanisms...... appear such as sulphidation and hot corrosion due to sulphate deposits. At Studstrup power plant Unit 4, based on trials with exposure times of 3000 hours using 0-20% straw co-firing with coal, the plant now runs with a fuel of 10% straw + coal. After three years exposure in this environment...

  12. Potential high temperature corrosion problems due to co-firing of biomass and fossil fuels

    Montgomery, Melanie; Vilhelmsen, T.; Jensen, S.A.

    2008-01-01

    Over the past few years, considerable high temperature corrosion problems have been encountered when firing biomass in power plants due to the high content of potassium chloride in the deposits. Therefore, to combat chloride corrosion problems cofiring of biomass with a fossil fuel has been...... undertaken. This results in potassium chloride being converted to potassium sulphate in the combustion chamber and it is sulphate rich deposits that are deposited on the vulnerable metallic surfaces such as high temperature superheaters. Although this removes the problem of chloride corrosion, other...... corrosion mechanisms appear such as sulphidation and hot corrosion due to sulphate deposits. At Studstrup power plant Unit 4, based on trials with exposure times of 3000 h using 0–20% straw co-firing with coal, the plant now runs with a fuel mix of 10% strawþcoal. Based on results from a 3 years exposure...

  13. Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

    Kanimozhi, Catherine K.

    2012-10-10

    In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a copolymer with exceptional properties such as extended absorption characteristics (up to ∼1100 nm) and field-effect electron mobility values of >1 cm 2 V -1 s -1. The synthesis of this novel DPP-DPP copolymer in combination with the demonstration of transistors with extremely high electron mobility makes this work an important step toward a new family of DPP-DPP copolymers for application in the general area of organic optoelectronics. © 2012 American Chemical Society.

  14. Followup Audit: DLA Officials Took Appropriate Actions to Address Concerns With Repair Parts for the High Mobility Multipurpose Wheeled Vehicle

    2016-04-29

    Followup Audit : DLA Officials Took Appropriate Actions to Address Concerns With Repair Parts for the High Mobility Multipurpose Wheeled Vehicle A P R I L...Results in Brief Followup Audit : DLA Officials Took Appropriate Actions to Address Concerns With Repair Parts for the High Mobility Multipurpose Wheeled...and Maritime Paid Too Much for High Mobility Multipurpose Wheeled Vehicle Repair Parts,” (HMMWV) was issued on April 4, 2014. The audit

  15. High Magnetic Field in THz Plasma Wave Detection by High Electron Mobility Transistors

    Sakowicz, M.; Łusakowski, J.; Karpierz, K.; Grynberg, M.; Valusis, G.

    The role of gated and ungated two dimensional (2D) electron plasma in THz detection by high electron mobility transistors (HEMTs) was investigated. THz response of GaAs/AlGaAs and GaN/AlGaN HEMTs was measured at 4.4K in quantizing magnetic fields with a simultaneous modulation of the gate voltage UGS. This allowed us to measure both the detection signal, S, and its derivative dS/dUGS. Shubnikov - de-Haas oscillations (SdHO) of both S and dS/dUGS were observed. A comparison of SdHO observed in detection and magnetoresistance measurements allows us to associate unambiguously SdHO in S and dS/dUGS with the ungated and gated parts of the transistor channel, respectively. This allows us to conclude that the entire channel takes part in the detection process. Additionally, in the case of GaAlAs/GaAs HEMTs, a structure related to the cyclotron resonance transition was observed.

  16. High Expression of High-Mobility Group Box 1 in Menstrual Blood: Implications for Endometriosis.

    Shimizu, Keiko; Kamada, Yasuhiko; Sakamoto, Ai; Matsuda, Miwa; Nakatsuka, Mikiya; Hiramatsu, Yuji

    2017-11-01

    Endometriosis is a benign gynecologic disease characterized by the presence of ectopic endometrium and associated with inflammation and immune abnormalities. However, the molecular basis for endometriosis is not well understood. To address this issue, the present study examined the expression of high-mobility group box (HMGB) 1 in menstrual blood to investigate its role in the ectopic growth of human endometriotic stromal cells (ESCs). A total of 139 patients were enrolled in this study; 84 had endometriosis and 55 were nonendometriotic gynecological patients (control). The HMGB1 levels in various fluids were measured by enzyme-linked immunosorbent assay. Expression of receptor for advanced glycation end products (RAGE) in eutopic and ectopic endometrium was assessed by immunohistochemistry, and RAGE and vascular endothelial growth factor ( VEGF) messenger RNA expression in HMGB1- and lipopolysaccharide (LPS)-treated ESCs was evaluated by real-time polymerase chain reaction. The HMGB1 concentration was higher in menstrual blood than in serum or peritoneal fluid ( P endometriosis following retrograde menstruation when complexed with other factors such as LPS by inducing inflammation and angiogenesis.

  17. Redox oscillation affecting mercury mobility from highly contaminated coastal sediments: a mesocosm incubation experiment

    Emili A.

    2013-04-01

    Full Text Available Mercury (Hg mobility at the sediment-water interface was investigated during a laboratory incubation experiment on highly contaminated sediments (up to 23 μg g−1 of the Gulf of Trieste. Undisturbed sediment was collected in front of the Isonzo River mouth, which inflows Hg-rich suspended material originating from the Idrija (NW Slovenia mining district. Since hypoxic and anoxic conditions at the bottom are frequently observed, a redox oscillation was simulated in the laboratory at in situ temperature, using a dark flux chamber. Temporal variations of several parameters were monitored simultaneously: dissolved Hg and methylmercury (MeHg, O2, NH4+, NO3−+NO2−, PO43−, H2S, dissolved Fe and Mn, dissolved inorganic and organic carbon (DIC and DOC. Benthic fluxes of Hg and MeHg were higher under anoxic conditions while re-oxygenation caused concentrations of MeHg and Hg to rapidly drop, probably due to re-adsorption onto Fe/Mn oxyhydroxides and enhanced demethylation. Hence, during anoxic events, sediments of the Gulf of Trieste may be considered as an important source of dissolved Hg species for the water column. However, re-oxygenation of the bottom compartment mitigates Hg and MeHg release from the sediment, thus acting as a natural “defence” from possible interaction between the metal and the aquatic organisms.

  18. A southern African origin and cryptic structure in the highly mobile plains zebra.

    Pedersen, Casper-Emil T; Albrechtsen, Anders; Etter, Paul D; Johnson, Eric A; Orlando, Ludovic; Chikhi, Lounes; Siegismund, Hans R; Heller, Rasmus

    2018-03-01

    The plains zebra (Equus quagga) is an ecologically important species of the African savannah. It is also one of the most numerous and widely distributed ungulates, and six subspecies have been described based on morphological variation. However, the within-species evolutionary processes have been difficult to resolve due to its high mobility and a lack of consensus regarding the population structure. We obtained genome-wide DNA polymorphism data from more than 167,000 loci for 59 plains zebras from across the species range, encompassing all recognized extant subspecies, as well as three mountain zebras (Equus zebra) and three Grevy's zebras (Equus grevyi). Surprisingly, the population genetic structure does not mirror the morphology-based subspecies delineation, underlining the dangers of basing management units exclusively on morphological variation. We use demographic modelling to provide insights into the past phylogeography of the species. The results identify a southern African location as the most likely source region from which all extant populations expanded around 370,000 years ago. We show evidence for inclusion of the extinct and phenotypically divergent quagga (Equus quagga quagga) in the plains zebra variation and reveal that it was less divergent from the other subspecies than the northernmost (Ugandan) extant population.

  19. A compact high resolution ion mobility spectrometer for fast trace gas analysis.

    Kirk, Ansgar T; Allers, Maria; Cochems, Philipp; Langejuergen, Jens; Zimmermann, Stefan

    2013-09-21

    Drift tube ion mobility spectrometers (IMS) are widely used for fast trace gas detection in air, but portable compact systems are typically very limited in their resolving power. Decreasing the initial ion packet width improves the resolution, but is generally associated with a reduced signal-to-noise-ratio (SNR) due to the lower number of ions injected into the drift region. In this paper, we present a refined theory of IMS operation which employs a combined approach for the analysis of the ion drift and the subsequent amplification to predict both the resolution and the SNR of the measured ion current peak. This theoretical analysis shows that the SNR is not a function of the initial ion packet width, meaning that compact drift tube IMS with both very high resolution and extremely low limits of detection can be designed. Based on these implications, an optimized combination of a compact drift tube with a length of just 10 cm and a transimpedance amplifier has been constructed with a resolution of 183 measured for the positive reactant ion peak (RIP(+)), which is sufficient to e.g. separate the RIP(+) from the protonated acetone monomer, even though their drift times only differ by a factor of 1.007. Furthermore, the limits of detection (LODs) for acetone are 180 pptv within 1 s of averaging time and 580 pptv within only 100 ms.

  20. Mobile relays for enhanced broadband connectivity in high speed train systems

    Yaacoub, Elias E.

    2014-09-01

    With the introduction of wireless modems and smart phones, the passenger transport industry is witnessing a high demand to ensure not only the safety of the trains, but also to provide users with Internet access all the time inside the train. When the Mobile Terminal (MT) communicates directly with the Base Station (BS), it will experience a severe degradation in the Quality of Service due to the path loss and shadowing effects as the wireless signal is traveling through the train. In this paper, we study the performance in the case of relays placed on top of each train car. In the proposed approach, these relays communicate with the cellular BS on one hand, and with the MTs inside the train cars on the other hand, using the Long Term Evolution (LTE) cellular technology. A low complexity heuristic LTE radio resource management approach is proposed and compared to the Hungarian algorithm, both in the presence and absence of the relays. The presence of the relays is shown to lead to significant enhancements in the effective data rates of the MTs. In addition, the proposed resource management approach is shown to reach a performance close to the optimal Hungarian algorithm. © 2014 Elsevier B.V.

  1. Carbon doped GaAs/AlGaAs heterostructures with high mobility two dimensional hole gas

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    Two dimensional hole gases (2DHG) with high carrier mobilities are required for both fundamental research and possible future ultrafast spintronic devices. Here, two different types of GaAs/AlGaAs heterostructures hosting a 2DHG were investigated. The first structure is a GaAs QW embedded in AlGaAs barrier grown by molecular beam epitaxy with carbon-doping only at one side of the quantum well (QW) (single side doped, ssd), while the second structure is similar but with symmetrically arranged doping layers on both sides of the QW (double side doped, dsd). The ssd-structure shows hole mobilities up to 1.2*10{sup 6} cm{sup 2}/Vs which are achieved after illumination. In contrast, the dsd-structure hosts a 2DHG with mobility up to 2.05*10{sup 6} cm{sup 2}/Vs. Here, carrier mobility and carrier density is not affected by illuminating the sample. Both samples showed distinct Shubnikov-de-Haas oscillations and fractional quantum-Hall-plateaus in magnetotransport experiments done at 20mK, indicating the high quality of the material. In addition, the influence of different temperature profiles during growth and the influence of the Al content of the barrier Al{sub x}Ga{sub 1-x}As on carrier concentration and mobility were investigated and are presented here.

  2. High-skilled labour mobility in Europe before and after the 2004 enlargement.

    Petersen, Alexander M; Puliga, Michelangelo

    2017-03-01

    The extent to which international high-skilled mobility channels are forming is a question of great importance in an increasingly global knowledge-based economy. One factor facilitating the growth of high-skilled labour markets is the standardization of certifiable degrees meriting international recognition. Within this context, we analysed an extensive high-skilled mobility database comprising roughly 382 000 individuals from five broad profession groups (Medical, Education, Technical, Science & Engineering and Business & Legal) over the period 1997-2014, using the 13-country expansion of the European Union (EU) to provide insight into labour market integration. We compare the periods before and after the 2004 enlargement, showing the emergence of a new east-west migration channel between the 13 mostly eastern EU entrants (E) and the rest of the western European countries (W). Indeed, we observe a net directional loss of human capital from E → W, representing 29% of the total mobility after 2004. Nevertheless, the counter-migration from W → E is 7% of the total mobility over the same period, signalling the emergence of brain circulation within the EU. Our analysis of the country-country mobility networks and the country-profession bipartite networks provides timely quantitative evidence for the convergent integration of the EU, and highlights the central role of the UK and Germany as high-skilled labour hubs. We conclude with two data-driven models to explore the structural dynamics of the mobility networks. First, we develop a reconfiguration model to explore the potential ramifications of Brexit and the degree to which redirection of high-skilled labourers away from the UK may impact the integration of the rest of the European mobility network. Second, we use a panel regression model to explain empirical high-skilled mobility rates in terms of various economic 'push-pull' factors, the results of which show that government expenditure on education, per capita

  3. Gain reduction due to space charge at high counting rates in multiwire proportional chambers

    Smith, G.C.; Mathieson, E.

    1986-10-01

    Measurements with a small MWPC of gas gain reduction, due to ion space charge at high counting rates, have been compared with theoretical predictions. The quantity ln(q/q 0 )/(q/q 0 ), where (q/q 0 ) is the relative reduced avalanche charge, has been found to be closely proportional to count rate, as predicted. The constant of proportionality is in good agreement with calculations made with a modified version of the original, simplified theory

  4. High-voltage electrical burns due to copper theft - Case series.

    Braga, M J; Oliveira, I; Egipto, P; Silva, A

    2016-03-31

    Electrical burns are among the most devastating trauma inflicted on the human body. These burns have a higher morbidity, length of stay and a much higher risk of amputation than any other type of burn. Electrical burns affect mostly young, working males because they are more frequently the result of a work accident. However, possibly due to the worldwide economic crisis, we are experiencing a new phenomenon: the theft of high-voltage copper wiring.

  5. High-voltage electrical burns due to copper theft – Case series

    Braga, M.J.; Oliveira, I.; Egipto, P.; Silva, A.

    2016-01-01

    Summary Electrical burns are among the most devastating trauma inflicted on the human body. These burns have a higher morbidity, length of stay and a much higher risk of amputation than any other type of burn. Electrical burns affect mostly young, working males because they are more frequently the result of a work accident. However, possibly due to the worldwide economic crisis, we are experiencing a new phenomenon: the theft of high-voltage copper wiring. PMID:27857650

  6. From mobile ADCP to high-resolution SSC: a cross-section calibration tool

    Boldt, Justin A.

    2015-01-01

    Sediment is a major cause of stream impairment, and improved sediment monitoring is a crucial need. Point samples of suspended-sediment concentration (SSC) are often not enough to provide an understanding to answer critical questions in a changing environment. As technology has improved, there now exists the opportunity to obtain discrete measurements of SSC and flux while providing a spatial scale unmatched by any other device. Acoustic instruments are ubiquitous in the U.S. Geological Survey (USGS) for making streamflow measurements but when calibrated with physical sediment samples, they may be used for sediment measurements as well. The acoustic backscatter measured by an acoustic Doppler current profiler (ADCP) has long been known to correlate well with suspended sediment, but until recently, it has mainly been qualitative in nature. This new method using acoustic surrogates has great potential to leverage the routine data collection to provide calibrated, quantitative measures of SSC which hold promise to be more accurate, complete, and cost efficient than other methods. This extended abstract presents a method for the measurement of high spatial and temporal resolution SSC using a down-looking, mobile ADCP from discrete cross-sections. The high-resolution scales of sediment data are a primary advantage and a vast improvement over other discrete methods for measuring SSC. Although acoustic surrogate technology using continuous, fixed-deployment ADCPs (side-looking) is proven, the same methods cannot be used with down-looking ADCPs due to the fact that the SSC and particle-size distribution variation in the vertical profile violates theory and complicates assumptions. A software tool was developed to assist in using acoustic backscatter from a down-looking, mobile ADCP as a surrogate for SSC. This tool has a simple graphical user interface that loads the data, assists in the calibration procedure, and provides data visualization and output options. This tool

  7. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

    Zomer, P. J.; Dash, S. P.; Tombros, N.; van Wees, B. J.

    2011-01-01

    We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm(2) V-1 s(-1) at room temperature and 275 000 cm(2) V-1 s(-1) at 4.2 K. The excellent quality is supported by the early

  8. Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

    Macco, B.; Knoops, H.C.M.; Verheijen, M.A.; Beyer, W.; Creatore, M.; Kessels, W.M.M.

    2017-01-01

    In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H2 plasma offers key advantages over traditional

  9. High mobility group A1 enhances tumorigenicity of human cholangiocarcinoma and confers resistance to therapy

    Quintavalle, Cristina; Burmeister, Katharina; Piscuoglio, Salvatore

    2017-01-01

    High mobility group A1 (HMGA1) protein has been described to play an important role in numerous types of human carcinoma. By the modulation of several target genes HMGA1 promotes proliferation and epithelial-mesenchymal transition of tumor cells. However, its role in cholangiocarcinoma (CCA) has...

  10. Considering the Geographic Dispersion of Homeless and Highly Mobile Students and Families

    Miller, Peter M.; Bourgeois, Alexis K.

    2013-01-01

    This article addresses school and community-level issues associated with the expanding crisis of student homelessness in the United States. We note that while an increased geographic dispersion of homeless and highly mobile (HHM) families is largely attributed to the widespread effects of the economic recession, it is also furthered by shifting…

  11. An Exploration of Teacher Attrition and Mobility in High Poverty Racially Segregated Schools

    Djonko-Moore, Cara M.

    2016-01-01

    The purpose of this study was to examine the mobility (movement to a new school) and attrition (quitting teaching) patterns of teachers in high poverty, racially segregated (HPRS) schools in the US. Using 2007-9 survey data from the National Center for Education Statistics, a multi-level multinomial logistic regression was performed to examine the…

  12. Using Mobile Communication Technology in High School Education: Motivation, Pressure, and Learning Performance

    Rau, Pei-Luen Patrick; Gao, Qin; Wu, Li-Mei

    2008-01-01

    Motivation and pressure are considered two factors impacting vocational senior high school student learning. New communication technology, especially mobile communication technology, is supposed to be effective in encouraging interaction between the student and the instructor and improving learning efficiency. Social presence and information…

  13. Integrating mHealth Mobile Applications to Reduce High Risk Drinking among Underage Students

    Kazemi, Donna M.; Cochran, Allyson R.; Kelly, John F.; Cornelius, Judith B.; Belk, Catherine

    2014-01-01

    Objective: College students embrace mobile cell phones (MCPs) as a primary communication and entertainment device. The aim of this study was to investigate college students' perceptions toward using mHealth technology to deliver interventions to prevent high-risk drinking and associated consequences. Design/setting: Four focus group interviews…

  14. CityMobil : Human factor issues regarding highly automated vehicles on eLane

    Toffetti, A.; Wilschut, E.S.; Martens, M.H.; Schieben, A.; Rambaldini, A.; Merat, N.; Flemisch, F.

    2009-01-01

    There are several human factor concerns with highly autonomous or semiautonomous driving, such as transition of control, loss of skill, and dealing with automated system errors. Four CityMobil experiments studied the eLane concept for dual-mode cars, and the results of one are described. The open

  15. High School Pupils' Attitudes and Self-Efficacy of Using Mobile Devices

    Nikolopoulou, Kleopatra; Gialamas, Vasilis

    2017-01-01

    This paper regards a study aiming to investigate junior high school pupils' attitudes and self-efficacy of using mobile devices. A 25-item questionnaire was administered to 260 pupils aged 12-15 years old, in Greece. Pupils' attitudes were positive, and four factors were extracted, "perceived usefulness", "affection",…

  16. From computational discovery to experimental characterization of a high hole mobility organic crystal.

    Sokolov, Anatoliy N; Atahan-Evrenk, Sule; Mondal, Rajib; Akkerman, Hylke B; Sá nchez-Carrera, Roel S; Granados-Focil, Sergio; Schrier, Joshua; Mannsfeld, Stefan C B; Zoombelt, Arjan P; Bao, Zhenan; Aspuru-Guzik, Alá n

    2011-01-01

    can be hindered by synthetic and characterization difficulties. Here we show that in silico screening of novel derivatives of the dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene semiconductor with high hole mobility and air stability can lead

  17. A survey study of the association between mobile phone use and daytime sleepiness in California high school students.

    Nathan, Nila; Zeitzer, Jamie

    2013-09-12

    Mobile phone use is near ubiquitous in teenagers. Paralleling the rise in mobile phone use is an equally rapid decline in the amount of time teenagers are spending asleep at night. Prior research indicates that there might be a relationship between daytime sleepiness and nocturnal mobile phone use in teenagers in a variety of countries. As such, the aim of this study was to see if there was an association between mobile phone use, especially at night, and sleepiness in a group of U.S. teenagers. A questionnaire containing an Epworth Sleepiness Scale (ESS) modified for use in teens and questions about qualitative and quantitative use of the mobile phone was completed by students attending Mountain View High School in Mountain View, California (n = 211). Multivariate regression analysis indicated that ESS score was significantly associated with being female, feeling a need to be accessible by mobile phone all of the time, and a past attempt to reduce mobile phone use. The number of daily texts or phone calls was not directly associated with ESS. Those individuals who felt they needed to be accessible and those who had attempted to reduce mobile phone use were also ones who stayed up later to use the mobile phone and were awakened more often at night by the mobile phone. The relationship between daytime sleepiness and mobile phone use was not directly related to the volume of texting but may be related to the temporal pattern of mobile phone use.

  18. Cyclotron resonance spectroscopy of a high-mobility two-dimensional electron gas from 0.4 to 100 K at high filling factors

    Curtis, Jeremy A. [Univ. of Alabama, Birmingham, AL (United States); Tokumoto, Takahisa [Univ. of Alabama, Birmingham, AL (United States); Cherian, Judy G. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Kuno, J. [Rice Univ., Houston, TX (United States); Reno, John L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); McGill, Stephen A. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Karaiskaj, Denis [Univ. of South Florida, Tampa, FL (United States); Hilton, David J. [Univ. of Alabama, Birmingham, AL (United States)

    2015-10-01

    We have studied the cyclotron mobility of a Landau-quantized two-dimensional electron gas as a function of temperature (0.4 --100 K) at a fixed magnetic field (1.25 T) using terahertz time-domain spectroscopy in a sample with a low frequency mobility of μdc = 3.6 x 106 cm2 V-1 s-1 and a carrier concentration of ns = 2 x 106 cm-2. The low temperature mobility in this sample results from both impurity scattering and acoustic deformation potential scattering, with μ$-1\\atop{CR}$ ≈ (2.1 x 105 cm2 V-1 s-1)-1 + (3.8 x 10-8 V sK-1 cm-2 x T)-1 at low temperatures. Above 50 K, the cyclotron oscillations show a strong reduction in both the oscillation amplitude and lifetime that is dominated by the contribution due to polar optical phonons. These results suggest that electron dephasing times as long as ~ 300 ps are possible even at this high lling factor (v = 6:6) in higher mobility samples (> 107 cm2 V-1 s-1) that have lower impurity concentrations and where the cyclotron mobility at this carrier concentration would be limited by acoustic deformation potential scattering.

  19. Millimeter Wave Hybrid Photonic Wireless Links for High-Speed Wireless Access and Mobile Fronthaul

    Rommel, Simon

    As the introduction of the fifth generation of mobile services (5G) is set to revolutionize the way people, devices and machines connect, the changes to the underlying networks and technologies are no less drastic. The massive increase in user and data capacity, as well as the decrease in latency...... networks. In summary, the work presented in this thesis has regarded a multitude of aspects of millimeter wave hybrid photonic wireless links, expanding upon the state of the art and showing their feasibility for use in fifth generation mobile and high speed wireless access networks – hopefully bringing...

  20. Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors

    Chen, Hu

    2017-07-19

    The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.

  1. Task Phase Recognition for Highly Mobile Workers in Large Building Complexes

    Stisen, Allan; Mathisen, Andreas; Krogh, Søren

    2016-01-01

    requirements on the accuracy of the indoor positioning, and thus come with low deployment and maintenance effort in real-world settings. We evaluated the proposed methods in a large hospital complex, where the highly mobile workers were recruited among the non-clinical workforce. The evaluation is based......-scale indoor work environments, namely from a WiFi infrastructure providing coarse grained indoor positioning, from inertial sensors in the workers’ mobile phones, and from a task management system yielding information about the scheduled tasks’ start and end locations. The methods presented have low...... on manually labelled real-world data collected over 4 days of regular work life of the mobile workforce. The collected data yields 83 tasks in total involving 8 different orderlies from a major university hospital with a building area of 160, 000 m2. The results show that the proposed methods can distinguish...

  2. Investigating the Mobility of Light Autonomous Tracked Vehicles using a High Performance Computing Simulation Capability

    Negrut, Dan; Mazhar, Hammad; Melanz, Daniel; Lamb, David; Jayakumar, Paramsothy; Letherwood, Michael; Jain, Abhinandan; Quadrelli, Marco

    2012-01-01

    This paper is concerned with the physics-based simulation of light tracked vehicles operating on rough deformable terrain. The focus is on small autonomous vehicles, which weigh less than 100 lb and move on deformable and rough terrain that is feature rich and no longer representable using a continuum approach. A scenario of interest is, for instance, the simulation of a reconnaissance mission for a high mobility lightweight robot where objects such as a boulder or a ditch that could otherwise be considered small for a truck or tank, become major obstacles that can impede the mobility of the light autonomous vehicle and negatively impact the success of its mission. Analyzing and gauging the mobility and performance of these light vehicles is accomplished through a modeling and simulation capability called Chrono::Engine. Chrono::Engine relies on parallel execution on Graphics Processing Unit (GPU) cards.

  3. Transparent, high mobility InGaZnO thin films deposited by PLD

    Suresh, Arun; Gollakota, Praveen; Wellenius, Patrick; Dhawan, Anuj; Muth, John F.

    2008-01-01

    Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 10 19 carriers/cm 3 depending on the oxygen partial pressure during deposition. Hall mobilities as high as 16 cm 2 /V s were observed. This is approximately an order of magnitude higher than the mobility of amorphous silicon and indicates that InGaO 3 (ZnO) x with x ≤ 5 may be suitable for transparent, thin film transistor applications. Post-deposition annealing was found to strongly influence the carrier concentration while annealing effects on the electron mobility was less influential

  4. Mobility Performance in Slow- and High-Speed LTE Real Scenarios

    Gimenez, Lucas Chavarria; Cascino, Maria Carmela; Stefan, Maria

    2016-01-01

    Mobility performance and handover data interruption times in real scenarios are studied by means of field measurements in an operational LTE network. Both slow- and high-speed scenarios are analyzed by collecting results from two different areas: Aalborg downtown and the highway which encircles...... in the city center as cells on the same site often cover different non-crossing street canyons. Moreover, no handover failures are experienced in the measurements which confirms robust LTE mobility performance. The average interruption time, which is at least equal to the handover execution time, lays within...... the same city. Measurements reveal that the terminal is configured by the network with different handover parametrization depending on the serving cell, which indicates the use of mobility robustness optimization. Although the network is dominated by three sector sites, no intra-site handovers are observed...

  5. Transient pool boiling heat transfer due to increasing heat inputs in subcooled water at high pressures

    Fukuda, K. [Kobe Univ. of Mercantile Marine (Japan); Shiotsu, M.; Sakurai, A. [Kyoto Univ. (Japan)

    1995-09-01

    Understanding of transient boiling phenomenon caused by increasing heat inputs in subcooled water at high pressures is necessary to predict correctly a severe accident due to a power burst in a water-cooled nuclear reactor. Transient maximum heat fluxes, q{sub max}, on a 1.2 mm diameter horizontal cylinder in a pool of saturated and subcooled water for exponential heat inputs, q{sub o}e{sup t/T}, with periods, {tau}, ranging from about 2 ms to 20 s at pressures from atmospheric up to 2063 kPa for water subcoolings from 0 to about 80 K were measured to obtain the extended data base to investigate the effect of high subcoolings on steady-state and transient maximum heat fluxes, q{sub max}. Two main mechanisms of q{sub max} exist depending on the exponential periods at low subcoolings. One is due to the time lag of the hydrodynamic instability which starts at steady-state maximum heat flux on fully developed nucleate boiling (FDNB), and the other is due to the heterogenous spontaneous nucleations (HSN) in flooded cavities which coexist with vapor bubbles growing up from active cavities. The shortest period corresponding to the maximum q{sub max} for long period range belonging to the former mechanism becomes longer and the q{sub max}mechanism for long period range shifts to that due the HSN on FDNB with the increase of subcooling and pressure. The longest period corresponding to the minimum q{sub max} for the short period range belonging to the latter mechanism becomes shorter with the increase in saturated pressure. On the contrary, the longest period becomes longer with the increase in subcooling at high pressures. Correlations for steady-state and transient maximum heat fluxes were presented for a wide range of pressure and subcooling.

  6. Transient pool boiling heat transfer due to increasing heat inputs in subcooled water at high pressures

    Fukuda, K.; Shiotsu, M.; Sakurai, A.

    1995-01-01

    Understanding of transient boiling phenomenon caused by increasing heat inputs in subcooled water at high pressures is necessary to predict correctly a severe accident due to a power burst in a water-cooled nuclear reactor. Transient maximum heat fluxes, q max , on a 1.2 mm diameter horizontal cylinder in a pool of saturated and subcooled water for exponential heat inputs, q o e t/T , with periods, τ, ranging from about 2 ms to 20 s at pressures from atmospheric up to 2063 kPa for water subcoolings from 0 to about 80 K were measured to obtain the extended data base to investigate the effect of high subcoolings on steady-state and transient maximum heat fluxes, q max . Two main mechanisms of q max exist depending on the exponential periods at low subcoolings. One is due to the time lag of the hydrodynamic instability which starts at steady-state maximum heat flux on fully developed nucleate boiling (FDNB), and the other is due to the heterogenous spontaneous nucleations (HSN) in flooded cavities which coexist with vapor bubbles growing up from active cavities. The shortest period corresponding to the maximum q max for long period range belonging to the former mechanism becomes longer and the q max mechanism for long period range shifts to that due the HSN on FDNB with the increase of subcooling and pressure. The longest period corresponding to the minimum q max for the short period range belonging to the latter mechanism becomes shorter with the increase in saturated pressure. On the contrary, the longest period becomes longer with the increase in subcooling at high pressures. Correlations for steady-state and transient maximum heat fluxes were presented for a wide range of pressure and subcooling

  7. Comparison of dual mobility cup and other surgical construts used for three hundred and sixty two first time hip revisions due to recurrent dislocations: five year results from Lithuanian arthroplasty register.

    Stucinskas, Justinas; Kalvaitis, Tomas; Smailys, Alfredas; Robertsson, Otto; Tarasevicius, Sarunas

    2018-05-01

    Recently, there has been increasing interest in the use of dual mobility systems in the treatment of hip instability. The aim of this study was to investigate the re-revision rate of dual mobility cup compared to different surgical concepts when used for first-time hip revisions due to recurrent dislocations. The data were derived from the Lithuanian Arthroplasty Register. For survival analysis, we used both re-revision for all reasons and for dislocations as an end-point. Cox proportional hazards models were used to analyze the influence of various covariates (age, gender, and implant concept). A total of 1388 revisions were recorded from 2011 to 2015, of which 362 were performed due to recurrent dislocation. Of the revisions, 247 were performed using dual mobility cups, while 115 were performed using a variety of other surgical constructs including constrained acetabular cups, conventional cups, femoral head exchanges, stem exchanges or anti-luxation rings. There were 27 re-revisions of which 15 were for additional dislocations. There were only 2% re-revisions due to dislocation with dual mobility vs 9% when using other surgical constructs. Cox regression adjusting for age and gender showed that in the short-term, dual mobility cup had a lower risk of revision due to dislocation as well as for all reasons compared to the other surgical constructs. In revision of total hip arthroplasties for dislocation, significantly lower short-term re-revision rate was observed for patients revised with dual mobility cup.

  8. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

    Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

    2010-01-01

    We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

  9. Mobilities Mobilities

    César Pompeyo

    2011-12-01

    Full Text Available Urry, John (2007 Mobilities.Oxford: Polity Press.Urry, John (2007 Mobilities.Oxford: Polity Press.John Urry (1946-, profesor en la Universidad de Lancaster, es un sociólogo de sobra conocido y altamente reputado en el panorama internacional de las ciencias sociales. Su dilatada carrera, aparentemente dispersa y diversificada, ha seguido senderos bastante bien definidos dejando tras de sí un catálogo extenso de obras sociológicas de primer nivel. Sus primeros trabajos se centraban en el campo de la teoría social y la filosofía de las ciencias sociales o de la sociología del poder [...

  10. Determination of the coherence length in high-mobility semiconductor-coupled Josephson weak links

    Kleinsasser, A.W.

    1991-01-01

    A Nb-InAs-Nb superconductor-semiconductor-superconductor weak link based on a high-mobility homoepitaxial n-InAs film was reported recently [Akazaki, Kawakami, and Nittu J. Appl. Phys. 66, 6121 (1989)]. Measurements of the electron concentration, effective mass, and mobility allowed the coherence length in the normal link to be calculated. The mobility was high enough that the dirty limit was not applicable in the temperature range (∼2--7 K) over which the device critical current was measured. The temperature dependence of the critical current could not be fit by the usual theoretical form, even though an expression for the coherence length was used that should be applicable in both the clean and dirty limits. In this paper is demonstrated an excellent fit to the data, obtained by using the magnitude of the coherence length as a fitting parameter and assuming the dirty limit temperature dependence. This implies a coherence length proportional to T -1/2 but far shorter than that calculated from the known material parameters. It is suggested that a different scaling length may apply in high-mobility devices

  11. Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

    Zhang, Panlong; Wang, Haibo; Yan, Donghang

    2017-09-01

    A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Field effect in the quantum Hall regime of a high mobility graphene wire

    Barraud, C., E-mail: cbarraud@phys.ethz.ch, E-mail: clement.barraud@univ-paris-diderot.fr; Choi, T.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich (Switzerland); Butti, P.; Shorubalko, I. [Swiss Federal Laboratories of Materials Science and Technologies, EMPA Elect. Metrol. Reliabil. Lab., CH-8600 Dübendorf (Switzerland); Taniguchi, T.; Watanabe, K. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-08-21

    In graphene-based electronic devices like in transistors, the field effect applied thanks to a gate electrode allows tuning the charge density in the graphene layer and passing continuously from the electron to the hole doped regime across the Dirac point. Homogeneous doping is crucial to understand electrical measurements and for the operation of future graphene-based electronic devices. However, recently theoretical and experimental studies highlighted the role of the electrostatic edge due to fringing electrostatic field lines at the graphene edges [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008); F. T. Vasko and I. V. Zozoulenko, Appl. Phys. Lett. 97, 092115 (2010)]. This effect originates from the particular geometric design of the samples. A direct consequence is a charge accumulation at the graphene edges giving a value for the density, which deviates from the simple picture of a plate capacitor and also varies along the width of the graphene sample. Entering the quantum Hall regime would, in principle, allow probing this accumulation thanks to the extreme sensitivity of this quantum effect to charge density and the charge distribution. Moreover, the presence of an additional and counter-propagating edge channel has been predicted [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008)] giving a fundamental aspect to this technological issue. In this article, we investigate this effect by tuning a high mobility graphene wire into the quantum Hall regime in which charge carriers probe the electrostatic potential at high magnetic field close to the edges. We observe a slight deviation to the linear shift of the quantum Hall plateaus with magnetic field and we study its evolution for different filling factors, which correspond to different probed regions in real space. We discuss the possible origins of this effect including an increase of the charge density towards the edges.

  13. Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

    Warwick, C. N.; Venkateshvaran, D.; Sirringhaus, H.

    2015-09-01

    We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10-DNTT). The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014)] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

  14. Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

    C. N. Warwick

    2015-09-01

    Full Text Available We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT and 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT. The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

  15. Ultrasensitive detection of Hg2+ using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-01-01

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg 2+ . The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg 2+ and thymines were combined. The current response of this Hg 2+ ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg 2+ ions on the surface by the highly specific thymine-Hg 2+ -thymine recognition. The dynamic linear range for Hg 2+ detection has been determined in the concentrations from 10 −14 to 10 −8 M and a detection limit below 10 −14 M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg 2+ detection till now.

  16. High efficiency detection technique on quantum action due to radiation excitation

    Yamazaki, Tetsuo; Kobayashi, Naoto; Sakamoto, Isao; Hayashi, Nobuyuki; Okubo, Masataka

    1999-01-01

    For a key point to obtain high energy resolution, three items such as long life of quasi particle, short tunneling time, and low leakage current can be shown. Then, in order to establish high energy resolution by filling these three items, a research on Nb/Al/AlO x /Al/Nb superconducting tunnel junction was proceeded. In 1997 fiscal year, elucidation on phonon relaxation phenomenon in Nb crystal grain boundary was conducted. On energy resolution, by realizing increase of quasi particle life and upgrading if junction quality, 70 to 90 eV which is higher than that of semiconductor detector could be established. After then, to remove the phonon relaxation at crystal grain boundary, it was necessary to practise high qualification of absorber such as improvement of Nb film micro structure and single crystallization, and enforcement of quasi particle trapping due to superconductor except Nb/Al. (G.K.)

  17. Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

    Charith Jayanada Koswaththage

    2016-11-01

    Full Text Available InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.

  18. A High Speed Mobile Communication System implementing Bicasting Architecture on the IP Layer

    Yamada, Kazuhiro

    2012-01-01

    Having a broadband connection on high speed rails is something that business travelers want most. Increasing number of passengers is requesting even higher access speeds. We are proposing the Media Convergence System as an ideal communication system for future high speed mobile entities. The Media Convergence System recognizes plural wireless communication media between the ground network and each train, and then traffic is load-balanced over active media which varies according to circumstanc...

  19. Experiences from Implementing a Mobile Multiplayer Real-Time Game for Wireless Networks with High Latency

    Alf Inge Wang

    2009-01-01

    Full Text Available This paper describes results and experiences from designing, implementing, and testing a multiplayer real-time game over mobile networks with high latency. The paper reports on network latency and bandwidth measurements from playing the game live over GPRS, EDGE, UMTS, and WLAN using the TCP and the UDP protocols. These measurements describe the practical constraints of various wireless networks and protocols when used for mobile multiplayer game purposes. Further, the paper reports on experiences from implementing various approaches to minimize issues related to high latency. Specifically, the paper focuses on a discussion about how much of the game should run locally on the client versus on the server to minimize the load on the mobile device and obtain sufficient consistency in the game. The game was designed to reveal all kinds of implementation issues of mobile network multiplayer games. The goal of the game is for a player to push other players around and into traps where they loose their lives. The game relies heavily on collision detection between the players and game objects. The paper presents experiences from experimenting with various approaches that can be used to handle such collisions, and highlights the advantages and disadvantages of the various approaches.

  20. When is reacquisition necessary due to high extra-cardiac uptake in myocardial perfusion scintigraphy?

    Johansen, Allan; Lomsky, Milan; Gerke, Oke

    2013-01-01

    Technetium-labeled agents, which are most often used for assessing myocardial perfusion in myocardial perfusion scintigraphy (MPS), are cleared by the liver and excreted by the biliary system. Spillover from extra-cardiac activity into the myocardium, especially the inferior wall, might conceal d...... defects and lower the diagnostic accuracy of the study. The objective was to determine rules of thumb for when reacquisition is useful due to high extra-cardiac uptake, i.e., when interpretation of the studies was affected by poor image quality....

  1. Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

    Kaushik, J.K., E-mail: janeshkaushik@sspl.drdo.in [Solid State Physics Laboratory, Delhi 110054 (India); Balakrishnan, V.R.; Mongia, D.; Kumar, U.; Dayal, S. [Solid State Physics Laboratory, Delhi 110054 (India); Panwar, B.S. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Muralidharan, R. [Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

    2016-08-01

    This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si{sub 3}N{sub 4} passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si{sub 3}N{sub 4}/AlGaN interface in the un-gated regions provides an additional leakage path between the gate and source/drain and may constitute a large component of reverse current. This surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements. A thin interfacial amorphous semiconductor layer formed due to inter diffusion at Si{sub 3}N{sub 4}/AlGaN interface has been presumed as the source for this surface related leakage. We, therefore, conclude that optimum Si{sub 3}N{sub 4} deposition conditions and careful surface preparation prior to passivation can limit the extent of surface leakage and can thus vastly improve the device performance. - Highlights: • Enhanced leakage in AlGaN/GaN High Electron Mobility Transistors after passivation • Experimental evidence of the presence of extrinsic traps at Si{sub 3}N{sub 4}/AlGaN interface • Electron hopping in shallower extended defects and band tail traps at the interface. • Reduction in current collapse due to the virtual gate inhibition by this conduction • However, limitation on the operating voltages due to decrease in breakdown voltage.

  2. Comparison of fixed-bearing and mobile-bearing total knee arthroplasty after high tibial osteotomy.

    Hernigou, Philippe; Huys, Maxime; Pariat, Jacques; Roubineau, François; Flouzat Lachaniette, Charles Henri; Dubory, Arnaud

    2018-02-01

    There is no information comparing the results of fixed-bearing total knee replacement and mobile-bearing total knee replacement in the same patients previously treated by high tibial osteotomy. The purpose was therefore to compare fixed-bearing and mobile-bearing total knee replacements in patients treated with previous high tibial osteotomy. We compared the results of 57 patients with osteoarthritis who had received a fixed-bearing prosthesis after high tibial osteotomy with the results of 41 matched patients who had received a rotating platform after high tibial osteotomy. The match was made for length of follow-up period. The mean follow-up was 17 years (range, 15-20 years). The patients were assessed clinically and radiographically. The pre-operative knee scores had no statistically significant differences between the two groups. So was the case with the intra-operative releases, blood loss, thromboembolic complications and infection rates in either group. There was significant improvement in both groups of knees, and no significant difference was observed between the groups (i.e., fixed-bearing and mobile-bearing knees) for the mean Knee Society knee clinical score (95 and 92 points, respectively), or the Knee Society knee functional score (82 and 83 points, respectively) at the latest follow-up. However, the mean post-operative knee motion was higher for the fixed-bearing group (117° versus 110°). In the fixed-bearing group, one knee was revised because of periprosthetic fracture. In the rotating platform mobile-bearing group, one knee was revised because of aseptic loosening of the tibial component. The Kaplan-Meier survivorship for revision at ten years of follow-up was 95.2% for the fixed bearing prosthesis and 91.1% for the rotating platform mobile-bearing prosthesis. Although we did manage to detect significant differences mainly in clinical and radiographic results between the two groups, we found no superiority or inferiority of the mobile

  3. Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

    Lugani, L.; Carlin, J.-F.; Py, M. A.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2014-09-15

    We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 °C and show that they are not fully stable. In particular, InAlN top layers undergo degradation during high temperature annealing due to a surface related process, which causes the loss of crystal quality. This strongly impacts the transport properties of InAlN/GaN HEMT heterostructures; in particular, the mobility is significantly reduced. However, we demonstrate that high thermal stability can be achieved by capping with a GaN layer as thin as 0.5 nm. Those findings enabled us to realize in situ passivated HEMT heterostructures with state of the art transport properties.

  4. Calculating the X-Ray Fluorescence from the Planet Mercury Due to High-Energy Electrons

    Burbine, T. H.; Trombka, J. I.; Bergstrom, P. M., Jr.; Christon, S. P.

    2005-01-01

    The least-studied terrestrial planet is Mercury due to its proximity to the Sun, which makes telescopic observations and spacecraft encounters difficult. Our lack of knowledge about Mercury should change in the near future due to the recent launching of MESSENGER, a Mercury orbiter. Another mission (BepiColombo) is currently being planned. The x-ray spectrometer on MESSENGER (and planned for BepiColombo) can characterize the elemental composition of a planetary surface by measuring emitted fluorescent x-rays. If electrons are ejected from an atom s inner shell by interaction with energetic particles such as photons, electrons, or ions, electrons from an outer shell can transfer to the inner shell. Characteristic x-rays are then emitted with energies that are the difference between the binding energy of the ion in its excited state and that of the ion in its ground state. Because each element has a unique set of energy levels, each element emits x-rays at a unique set of energies. Electrons and ions usually do not have the needed flux at high energies to cause significant x-ray fluorescence on most planetary bodies. This is not the case for Mercury where high-energy particles were detected during the Mariner 10 flybys. Mercury has an intrinsic magnetic field that deflects the solar wind, resulting in a bow shock in the solar wind and a magnetospheric cavity. Electrons and ions accelerated in the magnetosphere tend to follow its magnetic field lines and can impact the surface on Mercury s dark side Modeling has been done to determine if x-ray fluorescence resulting from the impact of high-energy electrons accelerated in Mercury's magnetosphere can be detected by MESSENGER. Our goal is to understand how much bulk chemical information can be obtained from x-ray fluorescence measurements on the dark side of Mercury.

  5. High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives

    Nikolka, Mark; Nasrallah, Iyad; Rose, Bradley Daniel; Ravva, Mahesh Kumar; Broch, Katharina; Sadhanala, Aditya; Harkin, David; Charmet, Jerome; Hurhangee, Michael; Brown, Adam; Illig, Steffen; Too, Patrick; Jongman, Jan; McCulloch, Iain; Bredas, Jean-Luc; Sirringhaus, Henning

    2016-01-01

    Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the stability as well as uniformity to a high level sufficient for demanding industrial applications.

  6. High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives

    Nikolka, Mark

    2016-12-12

    Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the stability as well as uniformity to a high level sufficient for demanding industrial applications.

  7. SAROTA: application of specific absorption rate (SAR) and over-the-air (OTA) data for the characterization of the real-life exposure due to mobile phones

    Monebhurrun, Vikass

    2013-01-01

    The RF exposure level of a mobile phone is quantified by the measurement of the specific absorption rate (SAR) under laboratory conditions. The SAR which is measured while the mobile phone is operated at maximum power level does not reflect the real-life exposure scenario since the mobile phone typically re-adjusts its power level and frequency depending on the quality of the communication link with the nearest base station. The choice of a low RF exposure device based on the comparison of the relative SAR values of mobile phones can be misleading. The real-life RF exposure also depends on the over-the-air (OTA) performance of the mobile phone. Taken independently, the two sets of data do not allow a straightforward comparison of the global RF performance amongst mobile phones. A unique and simple parameter denoted as the SAROTA index is proposed for the characterization of mobile phones with regard to both RF exposure and OTA performance. The SAROTA index provides the real-life exposure index of the mobile phone.

  8. Quantum corrections to conductivity observed at intermediate magnetic fields in a high mobility GaAs/AlGaAs 2-dimensional electron gas

    Taboryski, R.; Veje, E.; Lindelof, P.E.

    1990-01-01

    Magnetoresistance with the field perpendicular to the 2-dimensional electron gas in a high mobility GaAs/AlGaAs heterostructure at low temperatures is studied. At the lowest magnetic field we observe the weak localization. At magnetic fields, where the product of the mobility and the magnetic field is of the order of unity, the quantum correction to conductivity due to the electron-electron interaction is as a source of magnetoresistance. A consistent analysis of experiments in this regime is for the first time performed. In addition to the well known electron-electron term with the expected temperature dependence, we find a new type of temperature independent quantum correction, which varies logarithmically with mobility. (orig.)

  9. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

    Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

    2008-01-01

    Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm 2 /V s) and sheet charge density (>3x10 13 cm -2 ), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/□ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

  10. Mobile plant for encapsulating of solid high-level radioactive waste in metal matrix

    Sobolev, I.A.; Arustamov, A.Eh.; Shiryaev, V.V.; Ozhovan, M.I.; Semenov, K.N.; Kachalov, M.B.

    1993-01-01

    Technology for disposal of spent radionuclide sources of ionizing radiation into the standard well-type storage facilities is considered. Universal mobile facility, providing for incorporation of high-level solid wastes into metallic matrices, is proposed. The facility consists of separate moduli, assembled on a transport platform. Electrical meter, wherein the matrix metal (lead and its alloys) is melted and heated up to 600-800 C constitutes the basic modulus in the facility. 4 refs., 4 figs

  11. Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors

    2017-03-01

    non - ionizing proton radiation damage effects at different energy levels on a GaN-on-silicon high electron mobility transistor...DISTRIBUTION CODE 13. ABSTRACT (maximum 200 words) In this work, a physics-based simulation of non - ionizing proton radiation damage effects at different...Polarization . . . . . . . . . . . . . . 6 2.3 Non - Ionizing Radiation Damage Effects . . . . . . . . . . . . . . . 10 2.4 Non - Ionizing Radiation Damage in

  12. Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures

    Fedoryshyn, Yuriy; Ostinelli, Olivier; Alt, Andreas; Pallin, Angel; Bolognesi, Colombo R.

    2014-01-01

    The optimization of heavily strained Ga 0.25 In 0.75 As/Al 0.48 In 0.52 As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm 2 /Vs and 70 000 cm 2 /Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10 12  cm −2 throughout the entire study

  13. Dose levels due to neutrons in the vicinity of high energy medical accelerators

    McGinley, P.H.; Wood, M.; Sohrabi, M.; Mills, M.; Rodriguez, R.

    1976-01-01

    High energy photons are generated for use in radiation therapy by the decelleration of electrons in metal targets. Fast neutrons are also generated as a result of (γ, n) and (e, e'n) interactions in the target, beam compensator filter, and collimator material. In this work the adsorbed dose to neutrons was measured at the center of a 10 x 10 cm photon beam and 5 cm outside of the beam edge for a number of treatment units. Dose levels due to slow and fast neutrons were also established outside of the treatment rooms and a Bonner sphere neutron spectrometer system was employed to determine the neutron energy spectrum due to stray neutron radiation at each accelerator. For the linac it was found that the neutron dose at the beam center was 0.0039% of the photon dose and values of 0.049% and 0.053% were observed for the Allis Chalmers betatron and the Brown Boveri Betatron. Dose equivalent rates in the range of 0.3 to 22.5 mrem/hr were measured for points outside the treatment rooms when the accelerators were operated at a photon dose rate of 100 rad/min at the treatment position

  14. Dust grain dynamics due to nonuniform and nonstationary high-frequency radiations in cold magnetoplasmas

    A. K. Nekrasov

    2006-03-01

    Full Text Available A general nonlinear theory for low-frequency electromagnetic field generation due to high-frequency nonuniform and nonstationary electromagnetic radiations in cold, uniform, multicomponent, dusty magnetoplasmas is developed. This theory permits us to consider the nonlinear action of all waves that can exist in such plasmas. The equations are derived for the dust grain velocities in the low-frequency nonlinear electric fields arising due to the presence of electromagnetic cyclotron waves travelling along the background magnetic field. The dust grains are considered to be magnetized as well as unmagnetized. Different regimes for the dust particle dynamics, depending on the spatio-temporal change of the wave amplitudes and plasma parameters, are discussed. It is shown that induced nonlinear electric fields can have both an electrostatic and electromagnetic nature. Conditions for maximum dust acceleration are found. The results obtained may be useful for understanding the possible mechanisms of dust grain dynamics in astrophysical, cosmic and laboratory plasmas under the action of nonuniform and nonstationary electromagnetic waves.

  15. Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy

    Pelliccione, M. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106 (United States); Bartel, J.; Goldhaber-Gordon, D. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States); Sciambi, A. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Pfeiffer, L. N.; West, K. W. [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-11-03

    Correlated electron states in high mobility two-dimensional electron systems (2DESs), including charge density waves and microemulsion phases intermediate between a Fermi liquid and Wigner crystal, are predicted to exhibit complex local charge order. Existing experimental studies, however, have mainly probed these systems at micron to millimeter scales rather than directly mapping spatial organization. Scanning probes should be well-suited to study the spatial structure of these states, but high mobility 2DESs are found at buried semiconductor interfaces, beyond the reach of conventional scanning tunneling microscopy. Scanning techniques based on electrostatic coupling to the 2DES deliver important insights, but generally with resolution limited by the depth of the 2DES. In this letter, we present our progress in developing a technique called “virtual scanning tunneling microscopy” that allows local tunneling into a high mobility 2DES. Using a specially designed bilayer GaAs/AlGaAs heterostructure where the tunnel coupling between two separate 2DESs is tunable via electrostatic gating, combined with a scanning gate, we show that the local tunneling can be controlled with sub-250 nm resolution.

  16. Dietary differentiation and the evolution of population genetic structure in a highly mobile carnivore.

    Małgorzata Pilot

    Full Text Available Recent studies on highly mobile carnivores revealed cryptic population genetic structures correlated to transitions in habitat types and prey species composition. This led to the hypothesis that natal-habitat-biased dispersal may be responsible for generating population genetic structure. However, direct evidence for the concordant ecological and genetic differentiation between populations of highly mobile mammals is rare. To address this we analyzed stable isotope profiles (δ(13C and δ(15N values for Eastern European wolves (Canis lupus as a quantifiable proxy measure of diet for individuals that had been genotyped in an earlier study (showing cryptic genetic structure, to provide a quantitative assessment of the relationship between individual foraging behavior and genotype. We found a significant correlation between genetic distances and dietary differentiation (explaining 46% of the variation in both the marginal test and crucially, when geographic distance was accounted for as a co-variable. These results, interpreted in the context of other possible mechanisms such as allopatry and isolation by distance, reinforce earlier studies suggesting that diet and associated habitat choice are influencing the structuring of populations in highly mobile carnivores.

  17. High-mobility pyrene-based semiconductor for organic thin-film transistors.

    Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

    2013-05-01

    Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

  18. Quantifying uncertainty due to internal variability using high-resolution regional climate model simulations

    Gutmann, E. D.; Ikeda, K.; Deser, C.; Rasmussen, R.; Clark, M. P.; Arnold, J. R.

    2015-12-01

    The uncertainty in future climate predictions is as large or larger than the mean climate change signal. As such, any predictions of future climate need to incorporate and quantify the sources of this uncertainty. One of the largest sources comes from the internal, chaotic, variability within the climate system itself. This variability has been approximated using the 30 ensemble members of the Community Earth System Model (CESM) large ensemble. Here we examine the wet and dry end members of this ensemble for cool-season precipitation in the Colorado Rocky Mountains with a set of high-resolution regional climate model simulations. We have used the Weather Research and Forecasting model (WRF) to simulate the periods 1990-2000, 2025-2035, and 2070-2080 on a 4km grid. These simulations show that the broad patterns of change depicted in CESM are inherited by the high-resolution simulations; however, the differences in the height and location of the mountains in the WRF simulation, relative to the CESM simulation, means that the location and magnitude of the precipitation changes are very different. We further show that high-resolution simulations with the Intermediate Complexity Atmospheric Research model (ICAR) predict a similar spatial pattern in the change signal as WRF for these ensemble members. We then use ICAR to examine the rest of the CESM Large Ensemble as well as the uncertainty in the regional climate model due to the choice of physics parameterizations.

  19. Modeling and Mitigation for High Frequency Switching Transients Due to Energization in Offshore Wind Farms

    Yanli Xin

    2016-12-01

    Full Text Available This paper presents a comprehensive investigation on high frequency (HF switching transients due to energization of vacuum circuit breakers (VCBs in offshore wind farms (OWFs. This research not only concerns the modeling of main components in collector grids of an OWF for transient analysis (including VCBs, wind turbine transformers (WTTs, submarine cables, but also compares the effectiveness between several mainstream switching overvoltage (SOV protection methods and a new mitigation method called smart choke. In order to accurately reproduce such HF switching transients considering the current chopping, dielectric strength (DS recovery capability and HF quenching capability of VCBs, three models are developed, i.e., a user–defined VCB model, a HF transformer terminal model and a three-core (TC frequency dependent model of submarine cables, which are validated through simulations and compared with measurements. Based on the above models and a real OWF configuration, a simulation model is built and several typical switching transient cases are investigated to analyze the switching transient process and phenomena. Subsequently, according to the characteristics of overvoltages, appropriate parameters of SOV mitigation methods are determined to improve their effectiveness. Simulation results indicate that the user–defined VCB model can satisfactorily simulate prestrikes and the proposed component models display HF characteristics, which are consistent with onsite measurement behaviors. Moreover, the employed protection methods can suppress induced SOVs, which have a steep front, a high oscillation frequency and a high amplitude, among which the smart choke presents a preferable HF damping effect.

  20. Insulin Resistance Induced by a High Fructose Diet in Rats Due to Hepatic Disturbance

    Heibashy, M.I.A.; Mazen, G.M.A.; Kelada, N.A.H.

    2013-01-01

    High consumption of dietary fructose is accused of being responsible for the development of the insulin resistance (IR) syndrome. Concern has arisen because of the realization that fructose, at elevated concentrations, can promote metabolic changes that are potentially deleterious. Among these changes is IR which manifests as a decreased biological response to normal levels of plasma insulin. Therefore, this experiment was designed to evaluate the role of high fructose diet on metabolic syndrome in rats. The experimental animals were divided into two batches. The control batch received a control diet; the second batch was given a high-fructose diet as the sole source of carbohydrate. The rats were continued on the dietary regimen for 1, 2 and 3 months. After the experimental periods, fructose fed rats groups showed significant elevations in the levels of glucose, insulin sensitivity, liver function tests, nitric oxide and tumor necrosis factor-α when compared to their corresponding values in the rats fed normal diet. Moreover, liver lipid peroxidation [thiobarbituric acid-reactive substance (TBARS) and lipid hydroperoxide concentrations were remarkably increased in high-fructose-fed rats according to the time of administration (1, 2 and 3 months). On the other hand, the activities of enzymatic antioxidants (glutathione reductase and glutathione peroxidase) and glyoxalase I and II were significantly declined in this group. In conclusion, high fructose feeding raises liver dysfunction and causes the features of metabolic syndrome (insulin resistance) in rats dependent on the time of administration due to different mechanisms which were discussed in this work according to available recent researches

  1. A Rectourethral Fistula due to Transrectal High-Intensity Focused Ultrasound Treatment: Diagnosis and Management

    Valeria Fiaschetti

    2012-01-01

    Full Text Available Colovesical fistula (CVF is an abnormal connection between the enteric and the urinary systems. The rectourethral fistula (RUF is a possible but extremely rare complication of treatment of prostate cancer with “transrectal High-Intensity Focused Ultrasound (HIFU treatment.” We present a case of CVF due to HIFU treatment of recurrent prostate cancer. The case was assessed with cystography completed with a pelvic CT scan—with MPR, MIP, and VR reconstruction—before emptying the bladder. Since the CT scan confirmed that the fistula involved solely the urethra and excluded even a minimal involvement of the bladder, it was possible to employ a conservative treatment by positioning a Foley catheter of monthly duration, in order to allow the urethra to rest. Still today, after 6 months, the patient is in a good clinical condition and has not shown yet signs of a recurrence of the fistula.

  2. Mobile natural gas leak surveys indicate that two utilities have high false negative rates

    von Fischer, J. C.; Brewer, P. E.; Chamberlain, S.; Gaylord, A.; von Fischer, J.

    2016-12-01

    In the distribution systems that carry natural gas to consumers, leaks need to be discovered for safety reasons and to reduce greenhouse gas emissions. However, few utilities have adopted newer laser-based technologies that have greater sensitivity and precision, and instead rely on "industry standard" equipment that is far less sensitive. In partnership with the Environmental Defense Fund and Google, we mapped natural gas leaks in the domains of two anonymous utilities (Utility "A" and "B") using high sensitivity Picarro methane analyzers in Google Street View Cars. Surprisingly, when we shared these results with utilities, their survey crews were unable to find most of the leaks that our survey indicated (84% in A and 80% in B). To investigate this phenomenon, our team visited a subset of the leaks in each utility domain (n=32 in A and n=30 in B), and worked alongside utility surveyors to search the leak indication area, using a Los Gatos Research ultraportable methane analyzer to pinpoint leak locations. We found evidence of natural gas leaks at 69% and 68% of the locations in Utilities A and B respectively where survey crews had found nothing. We describe this as a "false negative" rate for the utility because the utility survey falsely indicated that there was no leak at these locations. Of these false negatives, 7% (n=2 of 32 in A, n=2 of 30 in B) were determined to be Grade 1 leaks requiring immediate repair due to high safety risk. Instrument sensitivity appears to explain some of the false negative rates. In particular, use of some industry standard equipment appears to have created a false sense of confidence among utility surveyors that leaks were not present. However, there was also evidence of communication failures and that surveyors did not use optimal approaches in their search. Based on these findings, we suggest that: 1) mobile deployment of high-precision methane analyzers can help find more natural gas leaks, and 2) use of some hand-held survey

  3. The importance of incorporating functional habitats into conservation planning for highly mobile species in dynamic systems.

    Webb, Matthew H; Terauds, Aleks; Tulloch, Ayesha; Bell, Phil; Stojanovic, Dejan; Heinsohn, Robert

    2017-10-01

    The distribution of mobile species in dynamic systems can vary greatly over time and space. Estimating their population size and geographic range can be problematic and affect the accuracy of conservation assessments. Scarce data on mobile species and the resources they need can also limit the type of analytical approaches available to derive such estimates. We quantified change in availability and use of key ecological resources required for breeding for a critically endangered nomadic habitat specialist, the Swift Parrot (Lathamus discolor). We compared estimates of occupied habitat derived from dynamic presence-background (i.e., presence-only data) climatic models with estimates derived from dynamic occupancy models that included a direct measure of food availability. We then compared estimates that incorporate fine-resolution spatial data on the availability of key ecological resources (i.e., functional habitats) with more common approaches that focus on broader climatic suitability or vegetation cover (due to the absence of fine-resolution data). The occupancy models produced significantly (P increase or decrease in the area of one functional habitat (foraging or nesting) did not necessarily correspond to an increase or decrease in the other. Thus, an increase in the extent of occupied area may not equate to improved habitat quality or function. We argue these patterns are typical for mobile resource specialists but often go unnoticed because of limited data over relevant spatial and temporal scales and lack of spatial data on the availability of key resources. Understanding changes in the relative availability of functional habitats is crucial to informing conservation planning and accurately assessing extinction risk for mobile resource specialists. © 2017 Society for Conservation Biology.

  4. Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

    Xiaoqing Xu

    2016-11-01

    Full Text Available In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG properties of AlGaN/GaN high electron mobility transistor (HEMT structure grown by metal-organic chemical vapor deposition (MOCVD on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72% across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.

  5. The Influence of Perceived Convenience and Curiosity on Continuance Intention in Mobile English Learning for High School Students Using PDAs

    Chang, Chi-Cheng; Tseng, Kuo-Hung; Liang, Chaoyun; Yan, Chi-Fang

    2013-01-01

    Mobile learning aims to utilise communication devices such as mobile devices and wireless connection in combination with e-learning systems, allowing learners to experience convenient, instant and suitable learning at unrestricted time and place. Participants were 125 Taiwanese senior high school students, whose continuance intention was examined…

  6. Effects of inositol trisphosphate on calcium mobilization in high-voltage and saponin-permeabilized platelets

    Gear, A.R.L.; Hallam, T.J.

    1986-01-01

    Interest in phosphatidylinositol metabolism has been greatly stimulated by the findings that diglyceride and inositol phosphates may serve as second messengers in modulating cellular function. Formation of 1,4,5-inositol trisphosphate (IP 3 ), in particular, has been linked to mobilization of intracellular calcium in a number of cell types. The authors have examined the ability of IP 3 to mobilize calcium in human platelets permeabilized by either saponin or high-voltage discharge. Saponin at 15 μg/ml effectively permeabilized platelets to exogenous inositol 1,4,5-trisphosphate which released bound [ 45 Ca] within 1 min and with a Ka of 7.4 +/- 4.1 μM. A small (25%) azide-sensitive pool was also responsive to inositol trisphosphate. The calcium pools were completely discharged by A-23187 and the ATP-dependent uptake was prevented by dinitrophenol. In contrast to the result with saponin, platelets accessed by high-voltage discharge were insensitive to challenge by inositol 1,4,5-trisphosphate. The data suggest that while inositol 1,4,5-trisphosphate can rapidly mobilize platelet calcium, the ability to demonstrate this depends on the method of permeabilization

  7. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

    2008-06-21

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

  8. High-field asymmetric waveform ion mobility spectrometry for mass spectrometry-based proteomics.

    Swearingen, Kristian E; Moritz, Robert L

    2012-10-01

    High-field asymmetric waveform ion mobility spectrometry (FAIMS) is an atmospheric pressure ion mobility technique that separates gas-phase ions by their behavior in strong and weak electric fields. FAIMS is easily interfaced with electrospray ionization and has been implemented as an additional separation mode between liquid chromatography (LC) and mass spectrometry (MS) in proteomic studies. FAIMS separation is orthogonal to both LC and MS and is used as a means of on-line fractionation to improve the detection of peptides in complex samples. FAIMS improves dynamic range and concomitantly the detection limits of ions by filtering out chemical noise. FAIMS can also be used to remove interfering ion species and to select peptide charge states optimal for identification by tandem MS. Here, the authors review recent developments in LC-FAIMS-MS and its application to MS-based proteomics.

  9. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

    2008-01-01

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

  10. High Field Asymmetric Waveform Ion Mobility Spectrometry (FAIMS) for Mass Spectrometry-Based Proteomics

    Swearingen, Kristian E.; Moritz, Robert L.

    2013-01-01

    SUMMARY High field asymmetric waveform ion mobility spectrometry (FAIMS) is an atmospheric pressure ion mobility technique that separates gas-phase ions by their behavior in strong and weak electric fields. FAIMS is easily interfaced with electrospray ionization and has been implemented as an additional separation mode between liquid chromatography (LC) and mass spectrometry (MS) in proteomic studies. FAIMS separation is orthogonal to both LC and MS and is used as a means of on-line fractionation to improve detection of peptides in complex samples. FAIMS improves dynamic range and concomitantly the detection limits of ions by filtering out chemical noise. FAIMS can also be used to remove interfering ion species and to select peptide charge states optimal for identification by tandem MS. Here, we review recent developments in LC-FAIMS-MS and its application to MS-based proteomics. PMID:23194268

  11. Highly mobile charge-transfer excitons in two-dimensional WS2/tetracene heterostructures

    Zhu, Tong; Yuan, Long; Zhao, Yan; Zhou, Mingwei; Wan, Yan; Mei, Jianguo; Huang, Libai

    2018-01-01

    Charge-transfer (CT) excitons at heterointerfaces play a critical role in light to electricity conversion using organic and nanostructured materials. However, how CT excitons migrate at these interfaces is poorly understood. We investigate the formation and transport of CT excitons in two-dimensional WS2/tetracene van der Waals heterostructures. Electron and hole transfer occurs on the time scale of a few picoseconds, and emission of interlayer CT excitons with a binding energy of ~0.3 eV has been observed. Transport of the CT excitons is directly measured by transient absorption microscopy, revealing coexistence of delocalized and localized states. Trapping-detrapping dynamics between the delocalized and localized states leads to stretched-exponential photoluminescence decay with an average lifetime of ~2 ns. The delocalized CT excitons are remarkably mobile with a diffusion constant of ~1 cm2 s−1. These highly mobile CT excitons could have important implications in achieving efficient charge separation. PMID:29340303

  12. Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

    Franco, Jacopo; Groeseneken, Guido

    2014-01-01

    Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and pr...

  13. Thermodynamic Temperatures of High-Temperature Fixed Points: Uncertainties Due to Temperature Drop and Emissivity

    Castro, P.; Machin, G.; Bloembergen, P.; Lowe, D.; Whittam, A.

    2014-07-01

    This study forms part of the European Metrology Research Programme project implementing the New Kelvin to assign thermodynamic temperatures to a selected set of high-temperature fixed points (HTFPs), Cu, Co-C, Pt-C, and Re-C. A realistic thermal model of these HTFPs, developed in finite volume software ANSYS FLUENT, was constructed to quantify the uncertainty associated with the temperature drop across the back wall of the cell. In addition, the widely applied software package, STEEP3 was used to investigate the influence of cell emissivity. The temperature drop, , relates to the temperature difference due to the net loss of heat from the aperture of the cavity between the back wall of the cavity, viewed by the thermometer, defining the radiance temperature, and the solid-liquid interface of the alloy, defining the transition temperature of the HTFP. The actual value of can be used either as a correction (with associated uncertainty) to thermodynamic temperature evaluations of HTFPs, or as an uncertainty contribution to the overall estimated uncertainty. In addition, the effect of a range of furnace temperature profiles on the temperature drop was calculated and found to be negligible for Cu, Co-C, and Pt-C and small only for Re-C. The effective isothermal emissivity is calculated over the wavelength range from 450 nm to 850 nm for different assumed values of surface emissivity. Even when furnace temperature profiles are taken into account, the estimated emissivities change only slightly from the effective isothermal emissivity of the bare cell. These emissivity calculations are used to estimate the uncertainty in the temperature assignment due to the uncertainty in the emissivity of the blackbody.

  14. Evaluation of pulmonary changes due to biomass fuels using high-resolution computed tomography

    Kara, Mustafa; Tas, Fikret; Bulut, Sema; Akkurt, Ibrahim; Seyfikli, Zehra

    2003-01-01

    Biomass fuels are frequently used in rural areas of the world for cooking and heating frequently. It has been reported that the use of these fuels causes hazardous effects on the lungs. In this study, we evaluated the pulmonary changes due to the use of biomass fuels in a female population that lives in our territory by high-resolution computed tomography (HRCT). The study analyzed three groups of women. The first group comprised those subjects who were exposed to biomass without respiratory symptoms (group 1; n=32). The second group comprised those individuals that were exposed to biomass and showed respiratory symptoms, such as cough, sputum production, and dyspnea (group 2; n=30). The third group was composed of women who were not exposed to biomass and also had no respiratory symptoms (group 3; n=30). Women with a history of concomitant pulmonary diseases were excluded from the study. All groups were examined with HRCT. Groups 1 and 2 (individuals exposed to biomass fuels) had more pathologic findings than group 3 (not exposed to biomass fuels). Ground-glass appearance was seen in 71.9% in group 1, 23.3% in group 2, and 3.3% in group 3. The difference between the groups was statistically significant (p<0.05). Fibrotic bands were seen 50% in group 1, 63.3% in group 2, and only 6.7% in group 3 (p<0.001). Exposure to biomass fuels was the cause or predisposing factor for many pulmonary diseases, ranging from chronic bronchitis to diffuse lung diseases. We believe that these pathological changes due to biomass fuels can be detected earlier by HRCT and the diseases might be prevented or treated earlier. (orig.)

  15. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

    Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

    2018-02-01

    A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

  16. Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

    Xi Xiao-Wen; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Fan Qing-Yang; Shi Chun-Lei

    2016-01-01

    An electromagnetic pulse (EMP)-induced damage model based on the internal damage mechanism of the GaAs pseudomorphic high electron mobility transistor (PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level. (paper)

  17. Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

    Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

    2010-01-01

    A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors

    Zhang Kai; Cao Meng-Yi; Chen Yong-He; Yang Li-Yuan; Wang Chong; Ma Xiao-Hua; Hao Yue

    2013-01-01

    V-gate GaN high-electron-mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si 3 N 4 recess etching technology. Compared with standard HEMTs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco “ATLAS” for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at the gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Aspects of High-Q Tunable Antennas and Their Deployment for 4G Mobile Communications

    Bahramzy, Pevand; Jagielski, Ole; Svendsen, Simon

    2016-01-01

    Tunable antennas are very promising for future generations of mobile communications, where broad frequency coverage will be required increasingly. This work describes the design of small high-Quality factor (Q) tunable antennas based on Micro-Electro-Mechanical Systems (MEMS), which are capable...... of operation in the frequency ranges 600 - 960 MHz and 1710 - 2690 MHz. Some aspects of high-Q tunable antennas are investigated through experimental measurements and the result are presented. Results show that more than -30 dB of isolation can be achieved between the Transmit (Tx) and Receive (Rx) antennas...

  20. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the...

  1. The operation cutoff frequency of high electron mobility transistor measured by terahertz method

    Zhu, Y. M.; Zhuang, S. L.

    2014-01-01

    Commonly, the cutoff frequency of high electron mobility transistor (HEMT) can be measured by vector network analyzer (VNA), which can only measure the sample exactly in low frequency region. In this paper, we propose a method to evaluate the cutoff frequency of HEMT by terahertz (THz) technique. One example shows the cutoff frequency of our HEMT is measured at ∼95.30 GHz, which is reasonable agreement with that estimated by VNA. It is proved THz technology a potential candidate for the substitution of VNA for the measurement of high-speed devices even up to several THz.

  2. Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

    Arulkumaran, S.; Liu, Z.H.; Ng, G.I.; Cheong, W.C.; Zeng, R.; Bu, J.; Wang, H.; Radhakrishnan, K.; Tan, C.L.

    2007-01-01

    The influence of temperature (- 50 deg. C to + 200 deg. C) was studied on the DC and microwave characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on high resistivity Si substrate for the first time. The AlGaN/GaN HEMTs exhibited a current-gain cut-off frequency (f T ) of 11.8 GHz and maximum frequency of oscillation (f max ) of 27.5 GHz. When compared to room temperature values, about 4% and 10% increase in f T and f max and 23% and 39.5% decrease in f T and f max were observed when measured at - 50 deg. C and 200 deg. C, respectively. The improvement of I D , g m f T , and f max at - 50 deg. C is due to the enhancement of 2DEG mobility and effective electron velocity. The anomalous drain current reduction in the I-V curves were observed at low voltage region at the temperature ≤ 10 deg. C but disappeared when the temperature reached ≥ 25 deg. C. A positive threshold voltage (V th ) shift was observed from - 50 deg. C to 200 deg. C. The positive shift of V th is due to the occurrence of trapping effects in the devices. The drain leakage current decreases with activation energies of 0.028 eV and 0.068 eV. This decrease of leakage current with the increase of temperature is due to the shallow acceptor initiated impact ionization

  3. DESIGN APPLICATIONS BASED ON WEB MOBILE AT GAYA BARU SENIOR HIGH SCHOOL, CENTRAL LAMPUNG REGENCY AS PROMOTIONAL MEDIA

    Ahmad Yudi

    2017-05-01

    Full Text Available Gaya Baru Senior High School is one of the educational institutions in Lampung which is a less favorite institution in the area is precisely located in the district of Seputih Surabaya Central Lampung Regency. Gaya Baru Senior High School has already had a website but not many known. This Senior High School is also no information system through mobile web to promote the institution. Nevertheless, in its development, students or community want to find information about the school can be directly through the mobile web application. So in its development requires fast service. From research that conducted in Gaya Baru High School, existence of new mobile web application system will facilitate student or society of that area, especially in subdistrict Seputih Surabaya district Central Lampung, and present information about the info about situation in high school of new style it can be accessed directly through the mobile web media.

  4. Time-dependent 2-D modeling of edge plasma transport with high intermittency due to blobs

    Pigarov, A. Yu.; Krasheninnikov, S. I.; Rognlien, T. D.

    2012-01-01

    The results on time-dependent 2-D fluid modeling of edge plasmas with non-diffusive intermittent transport across the magnetic field (termed cross-field) based on the novel macro-blob approach are presented. The capability of this approach to simulate the long temporal evolution (∼0.1 s) of the background plasma and simultaneously the fast spatiotemporal dynamics of blobs (∼10 −4 s) is demonstrated. An analysis of a periodic sequence of many macro-blobs (PSMB) is given showing that the resulting plasma attains a dynamic equilibrium. Plasma properties in the dynamic equilibrium are discussed. In PSMB modeling, the effect of macro-blob generation frequency on edge plasma parameters is studied. Comparison between PSMB modeling and experimental profile data is given. The calculations are performed for the same plasma discharge using two different models for anomalous cross-field transport: time-average convection and PSMB. Parametric analysis of edge plasma variation with transport coefficients in these models is presented. The capability of the models to accurately simulate enhanced transport due to blobs is compared. Impurity dynamics in edge plasma with macro-blobs is also studied showing strong impact of macro-blob on profiles of impurity charge states caused by enhanced outward transport of high-charge states and simultaneous inward transport of low-charge states towards the core. Macro-blobs cause enhancement of sputtering rates, increase radiation and impurity concentration in plasma, and change erosion/deposition patterns.

  5. Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor.

    Hung, Wen-Yi; Chiang, Pin-Yi; Lin, Shih-Wei; Tang, Wei-Chieh; Chen, Yi-Ting; Liu, Shih-Hung; Chou, Pi-Tai; Hung, Yi-Tzu; Wong, Ken-Tsung

    2016-02-01

    A star-shaped 1,3,5-triazine/cyano hybrid molecule CN-T2T was designed and synthesized as a new electron acceptor for efficient exciplex-based OLED emitter by mixing with a suitable electron donor (Tris-PCz). The CN-T2T/Tris-PCz exciplex emission shows a high ΦPL of 0.53 and a small ΔET-S = -0.59 kcal/mol, affording intrinsically efficient fluorescence and highly efficient exciton up-conversion. The large energy level offsets between Tris-PCz and CN-T2T and the balanced hole and electron mobility of Tris-PCz and CN-T2T, respectively, ensuring sufficient carrier density accumulated in the interface for efficient generation of exciplex excitons. Employing a facile device structure composed as ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm), in which the electron-hole capture is efficient without additional carrier injection barrier from donor (or acceptor) molecule and carriers mobilities are balanced in the emitting layer, leads to a highly efficient green exciplex OLED with external quantum efficiency (EQE) of 11.9%. The obtained EQE is 18% higher than that of a comparison device using an exciplex exhibiting a comparable ΦPL (0.50), in which TCTA shows similar energy levels but higher hole mobility as compared with Tris-PCz. Our results clearly indicate the significance of mobility balance in governing the efficiency of exciplex-based OLED. Exploiting the Tris-PCz:CN-T2T exciplex as the host, we further demonstrated highly efficient yellow and red fluorescent OLEDs by doping 1 wt % Rubrene and DCJTB as emitter, achieving high EQE of 6.9 and 9.7%, respectively.

  6. High mobility AlGaN/GaN devices for β{sup −}-dosimetry

    Schmid, Martin; Howgate, John; Ruehm, Werner [Helmholtz Zentrum München, Ingolstädter Landstraße 1, 85764 Neuherberg (Germany); Thalhammer, Stefan, E-mail: stefan.thalhammer@physik.uni-augsburg.de [Universität Augsburg, Universitätsstraße 1, 86159 Augsburg (Germany)

    2016-05-21

    There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β{sup −}-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β{sup −}-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β{sup −}-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β{sup −}-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

  7. High mobility AlGaN/GaN devices for β"−-dosimetry

    Schmid, Martin; Howgate, John; Ruehm, Werner; Thalhammer, Stefan

    2016-01-01

    There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β"−-emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β"−-particle interactions with a metallic surface covering. We demonstrate that the source–drain current is modulated in dependence on the kinetic energy of the incident β"−-particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β"−-dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.

  8. Dedicated mobile high resolution prostate PET imager with an insertable transrectal probe

    Majewski, Stanislaw; Proffitt, James

    2010-12-28

    A dedicated mobile PET imaging system to image the prostate and surrounding organs. The imaging system includes an outside high resolution PET imager placed close to the patient's torso and an insertable and compact transrectal probe that is placed in close proximity to the prostate and operates in conjunction with the outside imager. The two detector systems are spatially co-registered to each other. The outside imager is mounted on an open rotating gantry to provide torso-wide 3D images of the prostate and surrounding tissue and organs. The insertable probe provides closer imaging, high sensitivity, and very high resolution predominately 2D view of the prostate and immediate surroundings. The probe is operated in conjunction with the outside imager and a fast data acquisition system to provide very high resolution reconstruction of the prostate and surrounding tissue and organs.

  9. N-polar GaN epitaxy and high electron mobility transistors

    Wong, Man Hoi; Keller, Stacia; Dasgupta, Nidhi Sansaptak; Denninghoff, Daniel J; Kolluri, Seshadri; Brown, David F; Lu, Jing; Fichtenbaum, Nicholas A; Ahmadi, Elaheh; DenBaars, Steven P; Speck, James S; Mishra, Umesh K; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth

    2013-01-01

    This paper reviews the progress of N-polar (0001-bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized. (invited review)

  10. Enhanced atomic mobility due to low dose neutron irradiation as measured in a 30Ag at % Zn alloy by Zener relaxation methods

    Halbwachs, M.; Hillairet, J.; Gonzalez, H.; Cost, J.

    1975-01-01

    Mean atomic jump rates were measured during and after short-time neutron irradiations of a fcc Ag-30 at. percent Zn alloy by monitoring the rate of the Zener relaxation. Measurements made at 40 0 C immediately after rapid suppression of the flux showed significant enhancement of the atomic mobility for a flux of approximately 10 11 fast n/cm 2 .sec and an irradiation time of only 30 sec. The subsequent decrease of the atomic mobility to the thermal equilibrium value was studied and found to follow simple exponential decay. The results are discussed in terms of the nature and concentration of mobile defects created by cascades, the mechanism for defect annihilation and the concentration of sinks

  11. Erosion of pyrolytic graphite and Ti-doped graphite due to high flux irradiation

    Ohtsuka, Yusuke; Ohashi, Junpei; Ueda, Yoshio; Isobe, Michiro; Nishikawa, Masahiro

    1997-01-01

    The erosion of pyrolytic graphite and titanium doped graphite RG-Ti above 1,780 K was investigated by 5 keV Ar beam irradiation with the flux from 4x10 19 to 1x10 21 m -2 ·s -1 . The total erosion yields were significantly reduced with the flux. This reduction would be attributed to the reduction of RES (radiation enhanced sublimation) yield, which was observed in the case of isotropic graphite with the flux dependence of RES yield of φ -0.26 (φ: flux) obtained in our previous work. The yield of pyrolytic graphite was roughly 30% higher than that of isotropic graphite below the flux of 10 20 m -2 ·s -1 whereas each yield approached to very close value at the highest flux of 1x10 21 m -2 ·s -1 . This result indicated that the effect of graphite structure on the RES yield, which was apparent in the low flux region, would disappear in the high flux region probably due to the disordering of crystal structure. In the case of irradiation to RG-Ti at 1,780 K, the surface undulations evolved with a mean height of about 3 μm at 1.2x10 20 m -2 ·s -1 , while at higher flux of 8.0x10 20 m -2 ·s -1 they were unrecognizable. These phenomena can be explained by the reduction of RES of graphite parts excluding TiC grains. (author)

  12. Backscatter dose from metallic materials due to obliquely incident high-energy photon beams

    Nadrowitz, Roger; Feyerabend, Thomas

    2001-01-01

    If metallic material is exposed to ionizing radiation of sufficient high energy, an increase in dose due to backscatter radiation occurs in front of this material. Our purpose in this study was to quantify these doses at variable distances between scattering materials and the detector at axial beam angles between 0 deg. (zero angle in beams eye view) and 90 deg. . Copper, silver and lead sheets embedded in a phantom of perspex were exposed to 10 MV-bremsstrahlung. The detector we developed is based on the fluorescence property of pyromellitic acid (1,2,4,5 benzenetetracarboxylic acid) after exposure to ionizing radiation. Our results show that the additional doses and the corresponding dose distribution in front of the scattering materials depend quantitatively and qualitatively on the beam angle. The backscatter dose increases with varying beam angle from 0 deg. to 90 deg. up to a maximum at 55 deg. for copper and silver. At angles of 0 deg. and 55 deg. the integral backscatter doses over a tissue-equivalent depth of 2 mm are 11.2% and 21.6% for copper and 24% and 28% for silver, respectively. In contrast, in front of lead there are no obvious differences of the measured backscatter doses at angles between 0 deg. and 55 deg. With a further increase of the beam angle from 55 deg. to 90 deg. the backscatter dose decreases steeply for all three materials. In front of copper a markedly lower penetrating depth of the backscattered electrons was found for an angle of 0 deg. compared to 55 deg. This dependence from the beam angle was less pronounced in front of silver and not detectable in front of lead. In conclusion, the dependence of the backscatter dose from the angle between axial beam and scattering material must be considered, as higher scattering doses have to be considered than previously expected. This may have a clinical impact since the surface of metallic implants is usually curved

  13. Backscatter dose from metallic materials due to obliquely incident high-energy photon beams

    Nadrowitz, Roger; Feyerabend, Thomas [Medical University of Luebeck, Germany, Department of Radiotherapy and Nuclear Medicine, Ratzeburger Allee 160, Luebeck, D-23538 (Germany)

    2001-06-01

    If metallic material is exposed to ionizing radiation of sufficient high energy, an increase in dose due to backscatter radiation occurs in front of this material. Our purpose in this study was to quantify these doses at variable distances between scattering materials and the detector at axial beam angles between 0 deg. (zero angle in beams eye view) and 90 deg. . Copper, silver and lead sheets embedded in a phantom of perspex were exposed to 10 MV-bremsstrahlung. The detector we developed is based on the fluorescence property of pyromellitic acid (1,2,4,5 benzenetetracarboxylic acid) after exposure to ionizing radiation. Our results show that the additional doses and the corresponding dose distribution in front of the scattering materials depend quantitatively and qualitatively on the beam angle. The backscatter dose increases with varying beam angle from 0 deg. to 90 deg. up to a maximum at 55 deg. for copper and silver. At angles of 0 deg. and 55 deg. the integral backscatter doses over a tissue-equivalent depth of 2 mm are 11.2% and 21.6% for copper and 24% and 28% for silver, respectively. In contrast, in front of lead there are no obvious differences of the measured backscatter doses at angles between 0 deg. and 55 deg. With a further increase of the beam angle from 55 deg. to 90 deg. the backscatter dose decreases steeply for all three materials. In front of copper a markedly lower penetrating depth of the backscattered electrons was found for an angle of 0 deg. compared to 55 deg. This dependence from the beam angle was less pronounced in front of silver and not detectable in front of lead. In conclusion, the dependence of the backscatter dose from the angle between axial beam and scattering material must be considered, as higher scattering doses have to be considered than previously expected. This may have a clinical impact since the surface of metallic implants is usually curved.

  14. High-level waste tank modifications, installation of mobilization equipment/check out

    Schiffhauer, M.A.; Thompson, S.C.

    1992-01-01

    PUREX high-level waste (HLW) is contained at the West Valley Demonstration Project (WVDP) in an underground carbon-steel storage tank. The HLW consists of a precipitated sludge and an alkaline supernate. This report describes the system that the WVDP has developed and implemented to resuspend and wash the HLW sludge from the tank. The report discusses Sludge Mobilization and Wash System (SMWS) equipment design, installation, and testing. The storage tank required modifications to accommodate the SMWS. These modifications are discussed as well

  15. Conductance fluctuations in high mobility monolayer graphene: Nonergodicity, lack of determinism and chaotic behavior.

    da Cunha, C R; Mineharu, M; Matsunaga, M; Matsumoto, N; Chuang, C; Ochiai, Y; Kim, G-H; Watanabe, K; Taniguchi, T; Ferry, D K; Aoki, N

    2016-09-09

    We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage and magnetic field were obtained to check for ergodicity. Non-linear dynamics concepts were used to study the nature of these fluctuations. The distribution of eigenvalues was estimated from the conductance fluctuations with Gaussian kernels and it indicates that the carrier motion is chaotic at low temperatures. We argue that a two-phase dynamical fluid model best describes the transport in this system and can be used to explain the violation of the so-called ergodic hypothesis found in graphene.

  16. Enhanced mass removal due to phase explosion during high irradiance nanosecond laser ablation of silicon

    Yoo, Jong Hyun [Univ. of California, Berkeley, CA (United States)

    2000-05-01

    The morphology of craters resulting from high irradiance laser ablation of silicon was measured using a white light interferometry microscope. The craters show a dramatic increase in their depth and volume at a certain irradiance, indicating a change in the primary mechanism for mass removal. Laser shadowgraph imaging was used to characterize and differentiate the mass ejection processes for laser irradiances above and below the threshold value. Time-resolved images show distinct features of the mass ejected at irradiances above the threshold value including the presence of micron-sized particulates; this begins at approximately 300 ~ 400 ns after the start of laser heating. The analysis of the phenomena was carried out by using two models: a thermal evaporation model and a phase explosion model. Estimation of the crater depth due to the thermally evaporated mass led to a large underestimation of the crater depth for irradiances above the threshold. Above the threshold irradiance, the possibility of phase explosion was analyzed. Two important results are the thickness of the superheated liquid layer that is close to the critical temperature and the time for vapor bubbles that are generated in the superheated liquid to achieve a critical size. After reaching the critical size, vapor bubbles can grow spontaneously resulting in a violent ejection of liquid droplets from the superheated volume. The effects of an induced transparency, i.e. of liquid silicon turning into an optically transparent liquid dielectric medium, are also introduced. The estimated time for a bubble to reach the critical size is in agreement with the delay time measured for the initiation of large mass ejection. Also, the thickness of the superheated liquid layer that is close to the critical temperature at the time of the beginning of the large mass ejection is representative of the crater depth at the threshold irradiance. These results suggest that phase explosion is a plausible thermal

  17. Mobile Workforce, Mobile Technology, Mobile Threats

    Garcia, J.

    2015-01-01

    Mobile technologies' introduction into the world of safeguards business processes such as inspection creates tremendous opportunity for novel approaches and could result in a number of improvements to such processes. Mobile applications are certainly the wave of the future. The success of the application ecosystems has shown that users want full fidelity, highly-usable, simple purpose applications with simple installation, quick responses and, of course, access to network resources at all times. But the counterpart to opportunity is risk, and the widespread adoption of mobile technologies requires a deep understanding of the threats and vulnerabilities inherent in mobile technologies. Modern mobile devices can be characterized as small computers. As such, the threats against computing infrastructure apply to mobile devices. Meanwhile, the attributes of mobile technology that make it such an obvious benefit over traditional computing platforms all have elements of risk: pervasive, always-on networking; diverse ecosystems; lack of centralized control; constantly shifting technological foundations; intense competition among competitors in the marketplace; the scale of the installation base (from millions to billions); and many more. This paper will explore the diverse and massive environment of mobile, the number of attackers and vast opportunities for compromise. The paper will explain how mobile devices prove valuable targets to both advanced and persistent attackers as well as less-skilled casual hackers. Organized crime, national intelligence agencies, corporate espionage are all part of the landscape. (author)

  18. Appendicectomies in Albanians in Greece: outcomes in a highly mobile immigrant patient population

    2001-01-01

    Background Albanian immigrants in Greece comprise a highly mobile population with unknown health care profile. We aimed to assess whether these immigrants were more or less likely to undergo laparotomy for suspected appendicitis with negative findings (negative appendicectomy), by performing a controlled study with individual (1:4) matching. We used data from 6 hospitals in the Greek prefecture of Epirus that is bordering Albania. Results Among a total of 2027 non-incidental appendicectomies for suspected appendicitis performed in 1994-1999, 30 patients with Albanian names were matched (for age, sex, time of operation and hospital) to 120 patients with Greek names. The odds for a negative appendicectomy were 3.4-fold higher (95% confidence interval [CI], 1.24-9.31, p = 0.02) in Albanian immigrants than in matched Greek-name subjects. The difference was most prominent in men (odds ratio 20.0, 95% CI, 1.41-285, p = 0.02) while it was not formally significant in women (odds ratio 1.56, 95% CI, 0.44-5.48). The odds for perforation were 1.25-fold higher in Albanian-name immigrants than in Greek-name patients (95% CI 0.44- 3.57). Conclusions Albanian immigrants in Greece are at high risk for negative appendicectomies. Socioeconomic, cultural and language parameters underlying health care inequalities in highly mobile immigrant populations need better study. PMID:11472640

  19. High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

    Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

    2017-04-01

    In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

  20. Sediment mobility and bedload transport rates in a high-elevation glacier-fed stream (Saldur river, Eastern Italian Alps)

    Dell'Agnese, A.; Mao, L.; Comiti, F.

    2012-04-01

    The assessment of bedload transport in high-gradient streams is necessary to evaluate and mitigate flood hazards and to understand morphological processes taking place in the whole river network. Bedload transport in steep channels is particularly difficult to predict due to the complex and varying types of flow resistance, the very coarse and heterogeneous sediments, and the activity and connections of sediment sources at the basin scale. Yet, bedload measurements in these environments are still relatively scarce, and long-term monitoring programs are highly valuable to explore spatial and temporal variability of bedload processes. Even fewer are investigations conducted in high-elevation glaciarized basins, despite their relevance in many regions worldwide. The poster will present bedload transport measurements in a newly established (spring 2011) monitoring station in the Saldur basin (Eastern Italian Alps), which presents a 3.3 km2 glacier in its upper part. At 2100 m a.s.l. (20 km2 drainage area), a pressure transducer measures flow stage and bedload transport is monitored continuously by means of a hydrophone (a cylindrical steel pipe with microphones registering particle collisions) and by 4 fixed antennas for tracing clasts equipped with PITs (Passive Integrated Transponders). At the same location bedload samples are collected by using both a "Bunte" bedload trap and a "Helley-Smith" sampler at 5 positions along a 5 m wide cross-section. Bedload was measured from June to August 2011 during daily discharge fluctuations due to snow- and ice- melt flows. Samples were taken at a large range of discharges (1.1 to 4.6 m3 s-1) and bedload rates (0.01 to 700 g s-1 m-1). As expected, samples taken using the two samplers are not directly comparable even if taken virtually at the same time and at the same location across the section. Results indicate that the grain size of the transported material increases with the shear stress acting on the channel bed and with the

  1. Automatic camera to laser calibration for high accuracy mobile mapping systems using INS

    Goeman, Werner; Douterloigne, Koen; Gautama, Sidharta

    2013-09-01

    A mobile mapping system (MMS) is a mobile multi-sensor platform developed by the geoinformation community to support the acquisition of huge amounts of geodata in the form of georeferenced high resolution images and dense laser clouds. Since data fusion and data integration techniques are increasingly able to combine the complementary strengths of different sensor types, the external calibration of a camera to a laser scanner is a common pre-requisite on today's mobile platforms. The methods of calibration, nevertheless, are often relatively poorly documented, are almost always time-consuming, demand expert knowledge and often require a carefully constructed calibration environment. A new methodology is studied and explored to provide a high quality external calibration for a pinhole camera to a laser scanner which is automatic, easy to perform, robust and foolproof. The method presented here, uses a portable, standard ranging pole which needs to be positioned on a known ground control point. For calibration, a well studied absolute orientation problem needs to be solved. In many cases, the camera and laser sensor are calibrated in relation to the INS system. Therefore, the transformation from camera to laser contains the cumulated error of each sensor in relation to the INS. Here, the calibration of the camera is performed in relation to the laser frame using the time synchronization between the sensors for data association. In this study, the use of the inertial relative movement will be explored to collect more useful calibration data. This results in a better intersensor calibration allowing better coloring of the clouds and a more accurate depth mask for images, especially on the edges of objects in the scene.

  2. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. JOINT PROCESSING OF UAV IMAGERY AND TERRESTRIAL MOBILE MAPPING SYSTEM DATA FOR VERY HIGH RESOLUTION CITY MODELING

    A. Gruen

    2013-08-01

    Full Text Available Both unmanned aerial vehicle (UAV technology and Mobile Mapping Systems (MMS are important techniques for surveying and mapping. In recent years, the UAV technology has seen tremendous interest, both in the mapping community and in many other fields of application. Carrying off-the shelf digital cameras, the UAV can collect high quality aerial optical images for city modeling using photogrammetric techniques. In addition, a MMS can acquire high density point clouds of ground objects along the roads. The UAV, if operated in an aerial mode, has difficulties in acquiring information of ground objects under the trees and along façades of buildings. On the contrary, the MMS collects accurate point clouds of objects from the ground, together with stereo images, but it suffers from system errors due to loss of GPS signals, and also lacks the information of the roofs. Therefore, both technologies are complementary. This paper focuses on the integration of UAV images, MMS point cloud data and terrestrial images to build very high resolution 3D city models. The work we will show is a practical modeling project of the National University of Singapore (NUS campus, which includes buildings, some of them very high, roads and other man-made objects, dense tropical vegetation and DTM. This is an intermediate report. We present work in progress.

  4. Fusion of lens-free microscopy and mobile-phone microscopy images for high-color-accuracy and high-resolution pathology imaging

    Zhang, Yibo; Wu, Yichen; Zhang, Yun; Ozcan, Aydogan

    2017-03-01

    Digital pathology and telepathology require imaging tools with high-throughput, high-resolution and accurate color reproduction. Lens-free on-chip microscopy based on digital in-line holography is a promising technique towards these needs, as it offers a wide field of view (FOV >20 mm2) and high resolution with a compact, low-cost and portable setup. Color imaging has been previously demonstrated by combining reconstructed images at three discrete wavelengths in the red, green and blue parts of the visible spectrum, i.e., the RGB combination method. However, this RGB combination method is subject to color distortions. To improve the color performance of lens-free microscopy for pathology imaging, here we present a wavelet-based color fusion imaging framework, termed "digital color fusion microscopy" (DCFM), which digitally fuses together a grayscale lens-free microscope image taken at a single wavelength and a low-resolution and low-magnification color-calibrated image taken by a lens-based microscope, which can simply be a mobile phone based cost-effective microscope. We show that the imaging results of an H&E stained breast cancer tissue slide with the DCFM technique come very close to a color-calibrated microscope using a 40x objective lens with 0.75 NA. Quantitative comparison showed 2-fold reduction in the mean color distance using the DCFM method compared to the RGB combination method, while also preserving the high-resolution features of the lens-free microscope. Due to the cost-effective and field-portable nature of both lens-free and mobile-phone microscopy techniques, their combination through the DCFM framework could be useful for digital pathology and telepathology applications, in low-resource and point-of-care settings.

  5. Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

    Zan, Hsiao-Wen; Yeh, Chun-Cheng; Meng, Hsin-Fei; Tsai, Chuang-Chuang; Chen, Liang-Hao

    2012-07-10

    An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  7. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Chao-Ming Hsu

    2015-05-01

    Full Text Available High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  8. Phosphorene: an unexplored 2D semiconductor with a high hole mobility.

    Liu, Han; Neal, Adam T; Zhu, Zhen; Luo, Zhe; Xu, Xianfan; Tománek, David; Ye, Peide D

    2014-04-22

    We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31-0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm(2)/V·s, and an on/off ratio of up to 10(4). We demonstrate the possibility of phosphorene integration by constructing a 2D CMOS inverter consisting of phosphorene PMOS and MoS2 NMOS transistors.

  9. Achieving high mobility ZnO : Al at very high growth rates by dc filtered cathodic arc deposition

    Mendelsberg, R J; Lim, S H N; Wallig, J; Anders, A; Zhu, Y K; Milliron, D J

    2011-01-01

    Achieving a high growth rate is paramount for making large-area transparent conducting oxide coatings at a low cost. Unfortunately, the quality of thin films grown by most techniques degrades as the growth rate increases. Filtered dc cathodic arc is a lesser known technique which produces a stream of highly ionized plasma, in stark contrast to the neutral atoms produced by standard sputter sources. Ions bring a large amount of potential energy to the growing surface which is in the form of heat, not momentum. By minimizing the distance from cathode to substrate, the high ion flux gives a very high effective growth temperature near the film surface without causing damage from bombardment. The high surface temperature is a direct consequence of the high growth rate and allows for high-quality crystal growth. Using this technique, 500-1300 nm thick and highly transparent ZnO : Al films were grown on glass at rates exceeding 250 nm min -1 while maintaining resistivity below 5 x 10 -4 Ω cm with electron mobility as high as 60 cm 2 V -1 s -1 . (fast track communication)

  10. Do mobile clinics provide high-quality antenatal care? A comparison of care delivery, knowledge outcomes and perception of quality of care between fixed and mobile clinics in central Haiti.

    Phillips, Erica; Stoltzfus, Rebecca J; Michaud, Lesly; Pierre, Gracia Lionel Fils; Vermeylen, Francoise; Pelletier, David

    2017-10-16

    Antenatal care (ANC) is an important health service for women in developing countries, with numerous proven benefits. Global coverage of ANC has steadily increased over the past 30 years, in part due to increased community-based outreach. However, commensurate improvements in health outcomes such as reductions in the prevalence of maternal anemia and infants born small-for-gestational age have not been achieved, even with increased coverage, indicating that quality of care may be inadequate. Mobile clinics are one community-based strategy used to further improve coverage of ANC, but their quality of care delivery has rarely been evaluated. To determine the quality of care of ANC in central Haiti, we compared adherence to national guidelines between fixed and mobile clinics by performing direct observations of antenatal care consultations and exit interviews with recipients of care using a multi-stage random sampling procedure. Outcome variables were eight components of care, and women's knowledge and perception of care quality. There were significant differences in the predicted proportion or probability of recommended services for four of eight care components, including intake, laboratory examinations, infection control, and supplies, iron folic acid supplements and Tetanus Toxoid vaccine provided to women. These care components were more likely performed in fixed clinics, except for distribution of supplies, iron-folic acid supplements, and Tetanus Toxoid vaccine, more likely provided in mobile clinics. There were no differences between clinic type for the proportion of total physical exam procedures performed, health and communication messages delivered, provider communication or documentation. Women's knowledge about educational topics was poor, but women perceived extremely high quality of care in both clinic models. Although adherence to guidelines differed by clinic type for half of the care components, both clinics had a low percentage of overall services

  11. Quantitative analysis of the improvement in high zoom maritime tracking due to real-time image enhancement

    Bachoo, AK

    2011-04-01

    Full Text Available This work aims to evaluate the improvement in the performance of tracking small maritime targets due to real-time enhancement of the video streams from high zoom cameras on pan-tilt pedestal. Due to atmospheric conditions these images can frequently...

  12. Patient-Facing Mobile Apps to Treat High-Need, High-Cost Populations: A Scoping Review.

    Singh, Karandeep; Drouin, Kaitlin; Newmark, Lisa P; Filkins, Malina; Silvers, Elizabeth; Bain, Paul A; Zulman, Donna M; Lee, Jae-Ho; Rozenblum, Ronen; Pabo, Erika; Landman, Adam; Klinger, Elissa V; Bates, David W

    2016-12-19

    Self-management is essential to caring for high-need, high-cost (HNHC) populations. Advances in mobile phone technology coupled with increased availability and adoption of health-focused mobile apps have made self-management more achievable, but the extent and quality of the literature supporting their use is not well defined. The purpose of this review was to assess the breadth, quality, bias, and types of outcomes measured in the literature supporting the use of apps targeting HNHC populations. Data sources included articles in PubMed and MEDLINE (National Center for Biotechnology Information), EMBASE (Elsevier), the Cochrane Central Register of Controlled Trials (EBSCO), Web of Science (Thomson Reuters), and the NTIS (National Technical Information Service) Bibliographic Database (EBSCO) published since 2008. We selected studies involving use of patient-facing iOS or Android mobile health apps. Extraction was performed by 1 reviewer; 40 randomly selected articles were evaluated by 2 reviewers to assess agreement. Our final analysis included 175 studies. The populations most commonly targeted by apps included patients with obesity, physical handicaps, diabetes, older age, and dementia. Only 30.3% (53/175) of the apps studied in the reviewed literature were identifiable and available to the public through app stores. Many of the studies were cross-sectional analyses (42.9%, 75/175), small (median number of participants=31, interquartile range 11.0-207.2, maximum 11,690), or performed by an app's developers (61.1%, 107/175). Of the 175 studies, only 36 (20.6%, 36/175) studies evaluated a clinical outcome. Most apps described in the literature could not be located on the iOS or Android app stores, and existing research does not robustly evaluate the potential of mobile apps. Whereas apps may be useful in patients with chronic conditions, data do not support this yet. Although we had 2-3 reviewers to screen and assess abstract eligibility, only 1 reviewer abstracted

  13. General factors that affects the increase of population mobility and principles of optimization of high-speed passenger transportations

    Momot, A.

    2014-01-01

    Purpose. Analyze the main factors that influence the increased mobility of the population in the transport market of Ukraine. Methods. The article uses an improved method of determining the optimal areas of high-speed passenger trains and determines the value of rational transportation of passengers in different directions of speed traffic, as well as the method of marginal income. Results. In this article we analyzed seven major factors that influence the increased mobility of the population...

  14. Mobile Phone Use in a Pennsylvania Public High School: Does Policy Inform Practice?

    Thackara, Susan Tomchak

    2014-01-01

    Though many American educators embrace technology in classrooms, administrators can create policies that inhibit technology such as mobile phone use in classrooms or on district property. These policies range from restrictive with no mobile phone use permitted, to liberal in which unrestricted use of mobile phones is allowed. The purpose of this…

  15. High physical and psychological load at work and sickness absence due to neck pain

    Ariëns, G.A.M.; Bongers, P.M.; Hoogendoorn, W.E.; Wal, G. van der; Mechelen, W. van

    2002-01-01

    Objectives This study investigates the relationship between physical and psychosocial load at work and sickness absence due to neck pain. Methods A prospective cohort study with a follow-up period of 3 years (1994-1998) was performed among a working population. At the beginning of the study,

  16. Hemoadsorption of high-mobility-group box 1 using a porous polymethylmethacrylate fiber in a swine acute liver failure model.

    Amemiya, Ryusuke; Shinoda, Masahiro; Yamada, Masayuki; Ueno, Yoshiyuki; Shimada, Kaoru; Fujieda, Hiroaki; Yagi, Hiroshi; Mizota, Takamasa; Nishiyama, Ryo; Oshima, Go; Yamada, Shingo; Matsubara, Kentaro; Abe, Yuta; Hibi, Taizo; Kitago, Minoru; Obara, Hideaki; Itano, Osamu; Kitagawa, Yuko

    2018-04-01

    High-mobility-group box chromosomal protein 1 has been identified as an important mediator of various kinds of acute and chronic inflammation. In this study, we aimed to develop a column that effectively adsorbs high-mobility-group box chromosomal protein 1 by altering the pore size of the fiber. First, we produced three types of porous polymethylmethacrylate fiber by altering the concentration of polymethylmethacrylate dissolved in dimethylsulfoxide. We then selected a fiber based on the results of an in vitro incubation test of high-mobility-group box chromosomal protein 1 adsorption. Using the selected fiber, we constructed a new column and tested its high-mobility-group box chromosomal protein 1 adsorption capacity during 4-h extracorporeal hemoperfusion in a swine acute liver failure model. Electron microscope observation showed that the three types of fibers had different pore sizes on the surface and in cross section, which were dependent on the concentration of polymethylmethacrylate. In the in vitro incubation test, fiber with moderate-sized pores demonstrated the highest adsorption capacity. In the in vivo hemoperfusion study, the ratio of the high-mobility-group box chromosomal protein 1 concentration at the outlet versus the inlet of the column was significantly lower with the new column than with the control column during 4-h extracorporeal hemoperfusion. The normalized plasma level of high-mobility-group box chromosomal protein 1 at 12 h after the completion of hemoperfusion was significantly lower with the new column than with the control column. The newly developed polymethylmethacrylate column adsorbs high-mobility-group box chromosomal protein 1 during hemoperfusion in swine ALF model.

  17. A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

    Mohammad Javad Sharifi

    2009-01-01

    Full Text Available A new structure for an exclusive-OR (XOR gate based on the resonant-tunneling high electron mobility transistor (RTHEMT is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

  18. High-Mobility, Ultrathin Organic Semiconducting Films Realized by Surface-Mediated Crystallization.

    Vladimirov, I; Kellermeier, M; Geßner, T; Molla, Zarah; Grigorian, S; Pietsch, U; Schaffroth, L S; Kühn, M; May, F; Weitz, R T

    2018-01-10

    The functionality of common organic semiconductor materials is determined by their chemical structure and crystal modification. While the former can be fine-tuned via synthesis, a priori control over the crystal structure has remained elusive. We show that the surface tension is the main driver for the plate-like crystallization of a novel small organic molecule n-type semiconductor at the liquid-air interface. This interface provides an ideal environment for the growth of millimeter-sized semiconductor platelets that are only few nanometers thick and thus highly attractive for application in transistors. On the basis of the novel high-performance perylene diimide, we show in as-grown, only 3 nm thin crystals electron mobilities of above 4 cm 2 /(V s) and excellent bias stress stability. We suggest that the established systematics on solvent parameters can provide the basis of a general framework for a more deterministic crystallization of other small molecules.

  19. Does a Mobile Phone Depression-Screening App Motivate Mobile Phone Users With High Depressive Symptoms to Seek a Health Care Professional's Help?

    BinDhim, Nasser F; Alanazi, Eman M; Aljadhey, Hisham; Basyouni, Mada H; Kowalski, Stefan R; Pont, Lisa G; Shaman, Ahmed M; Trevena, Lyndal; Alhawassi, Tariq M

    2016-06-27

    The objective of disease screening is to encourage high-risk subjects to seek health care diagnosis and treatment. Mobile phone apps can effectively screen mental health conditions, including depression. However, it is not known how effective such screening methods are in motivating users to discuss the obtained results of such apps with health care professionals. Does a mobile phone depression-screening app motivate users with high depressive symptoms to seek health care professional advice? This study aimed to address this question. This was a single-cohort, prospective, observational study of a free mobile phone depression app developed in English and released on Apple's App Store. Apple App Store users (aged 18 or above) in 5 countries, that is, Australia, Canada, New Zealand (NZ), the United Kingdom (UK), and the United States (US), were recruited directly via the app's download page. The participants then completed the Patient Health Questionnaire (PHQ-9), and their depression screening score was displayed to them. If their score was 11 or above and they had never been diagnosed with depression before, they were advised to take their results to their health care professional. They were to follow up after 1 month. A group of 2538 participants from the 5 countries completed PHQ-9 depression screening with the app. Of them, 322 participants were found to have high depressive symptoms and had never been diagnosed with depression, and received advice to discuss their results with health care professionals. About 74% of those completed the follow-up; approximately 38% of these self-reported consulting their health care professionals about their depression score. Only positive attitude toward depression as a real disease was associated with increased follow-up response rate (odds ratio (OR) 3.2, CI 1.38-8.29). A mobile phone depression-screening app motivated some users to seek a depression diagnosis. However, further study should investigate how other app users use

  20. Measurement of negative ion mobility in O2 at high pressures using a point plate gap as an ion detector

    Okuyama, Y; Kimura, T; Suzuki, S; Itoh, H

    2012-01-01

    This paper describes the experimental results for negative ion mobility in O 2 at 0.5-2.0 atm. The ion mobility is observed using a high-pressure ion drift tube with a positive corona gap (Geiger counter), which is constructed from a point plate gap and acts as a negative ion detector. The variation of waveforms in the burst pulse is observed by varying the voltage applied to the ion detector to find the optimum voltage that must be applied across the ion detector in O 2 . This is investigated carefully to ensure the precise determination of mobility. The distortion of the electric field near the mesh electrode, which operates as the cathode of the ion detector and as the anode of the ion drift gap, is then examined to determine the optimum applied voltage to suppress its effect on the measurement of mobility. The mobility is subsequently measured at a reduced electric field intensity of 2.83 × 10 -3 to 2.83. The observed mobility of 2.31 ± 0.03 cm 2 V -1 s -1 in O 2 is concluded to be that of O 2 - . This value is also obtained in experiments over a wide range of gas pressures (0.5-2.0 atm) and drift lengths (1.00-9.00 cm). The mobilities of O 3 - and O - are also obtained experimentally. (paper)

  1. Organic-inorganic hybrid perovskite quantum dots with high PLQY and enhanced carrier mobility through crystallinity control by solvent engineering and solid-state ligand exchange.

    Woo Choi, Jin; Woo, Hee Chul; Huang, Xiaoguang; Jung, Wan-Gil; Kim, Bong-Joong; Jeon, Sie-Wook; Yim, Sang-Youp; Lee, Jae-Suk; Lee, Chang-Lyoul

    2018-05-22

    The photoluminescence quantum yield (PLQY) and charge carrier mobility of organic-inorganic perovskite QDs were enhanced by the optimization of crystallinity and surface passivation as well as solid-state ligand exchange. The crystallinity of perovskite QDs was determined by the Effective solvent field (Esol) of various solvents for precipitation. The solvent with high Esol could more quickly countervail the localized field generated by the polar solvent, and it causes fast crystallization of the dissolved precursor, which results in poor crystallinity. The post-ligand adding process (PLAP) and post-ligand exchange process (PLEP) increase the PLQY of perovskite QDs by reducing non-radiative recombination and the density of surface defect states through surface passivation. Particularly, the post ligand exchange process (PLEP) in the solid-state improved the charge carrier mobility of perovskite QDs in addition to the PLQY enhancement. The ligand exchange with short alkyl chain length ligands could improve the packing density of perovskite QDs in films by reducing the inter-particle distance between perovskite QDs. The maximum hole mobility of 6.2 × 10-3 cm2 V-1 s-1, one order higher than that of pristine QDs without the PLEP, is obtained at perovskite QDs with hexyl ligands. By using PLEP treatment, compared to the pristine device, a 2.5 times higher current efficiency in perovskite QD-LEDs was achieved due to the improved charge carrier mobility and PLQY.

  2. Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials

    Nassar, Joanna M.

    2014-05-01

    For the last four decades, Si CMOS technology has been advancing with Moore’s law prediction, working itself down to the sub-20 nm regime. However, fundamental problems and limitations arise with the down-scaling of transistors and thus new innovations needed to be discovered in order to further improve device performance without compromising power consumption and size. Thus, a lot of studies have focused on the development of new CMOS compatible architectures as well as the discovery of new high mobility channel materials that will allow further miniaturization of CMOS transistors and improvement of device performance. Pushing the limits even further, flexible and foldable electronics seem to be the new attractive topic. By being able to make our devices flexible through a CMOS compatible process, one will be able to integrate hundreds of billions of more transistors in a small volumetric space, allowing to increase the performance and speed of our electronics all together with making things thinner, lighter, smaller and even interactive with the human skin. Thus, in this thesis, we introduce for the first time a cost-effective CMOS compatible approach to make high-k/metal gate devices on flexible Germanium (Ge) and Silicon-Germanium (SiGe) platforms. In the first part, we will look at the various approaches in the literature that has been developed to get flexible platforms, as well as we will give a brief overview about epitaxial growth of Si1-xGex films. We will also examine the electrical properties of the Si1-xGex alloys up to Ge (x=1) and discuss how strain affects the band structure diagram, and thus the mobility of the material. We will also review the material growth properties as well as the state-of-the-art results on high mobility metal-oxide semiconductor capacitors (MOSCAPs) using strained SiGe films. Then, we will introduce the flexible process that we have developed, based on a cost-effective “trench-protect-release-reuse” approach, utilizing

  3. Solution-processable ambipolar diketopyrrolopyrrole-selenophene polymer with unprecedentedly high hole and electron mobilities.

    Lee, Junghoon; Han, A-Reum; Kim, Jonggi; Kim, Yiho; Oh, Joon Hak; Yang, Changduk

    2012-12-26

    There is a fast-growing demand for polymer-based ambipolar thin-film transistors (TFTs), in which both n-type and p-type transistor operations are realized in a single layer, while maintaining simplicity in processing. Research progress toward this end is essentially fueled by molecular engineering of the conjugated backbones of the polymers and the development of process architectures for device fabrication, which has recently led to hole and electron mobilities of more than 1.0 cm(2) V(-1) s(-1). However, ambipolar polymers with even higher performance are still required. By taking into account both the conjugated backbone and side chains of the polymer component, we have developed a dithienyl-diketopyrrolopyrrole (TDPP) and selenophene containing polymer with hybrid siloxane-solubilizing groups (PTDPPSe-Si). A synergistic combination of rational polymer backbone design, side-chain dynamics, and solution processing affords an enormous boost in ambipolar TFT performance, resulting in unprecedentedly high hole and electron mobilities of 3.97 and 2.20 cm(2) V(-1) s(-1), respectively.

  4. Fabrication and characterization of high-mobility solution-based chalcogenide thin-film transistors

    Mejia, Israel I.; Salas Villaseñ or, Ana L.; Cha, Dong Kyu; Alshareef, Husam N.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo

    2013-01-01

    We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 °C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The IonI off ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7cm2V̇s for Al and Au source-drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS-metal interfaces. © 1963-2012 IEEE.

  5. High Purity Germanium Detector as part of Health Canada's Mobile Nuclear Laboratory

    Stocki, Trevor J.; Bouchard, Claude; Rollings, John; Boudreau, Marc-Oliver; McCutcheon- Wickham, Rory; Bergman, Lauren [Radiation Protection Bureau, Health Canada, AL6302D, 775 Brookfield Road, Ottawa, K1A 0K9 (Canada)

    2014-07-01

    In the event of a nuclear emergency on Canadian soil, Health Canada has designed and equipped two Mobile Nuclear Labs (MNLs) which can be deployed near a radiological accident site to provide radiological measurement capabilities. These measurements would help public authorities to make informed decisions for radiation protection recommendations. One of the MNLs has been outfitted with a High Purity Germanium (HPGe) detector within a lead castle, which can be used for identification as well as quantification of gamma emitting radioisotopes in contaminated soil, water, and other samples. By spring 2014, Health Canada's second MNL will be equipped with a similar detector to increase sample analysis capacity and also provide redundancy if one of the detectors requires maintenance. The Mobile Nuclear Lab (MNL) with the HPGe detector has been successfully deployed in the field for various exercises. One of these field exercises was a dirty bomb scenario where an unknown radioisotope required identification. A second exercise was an inter-comparison between the measurements of spiked soil and water samples, by two field teams and a certified laboratory. A third exercise was the deployment of the MNL as part of a full scale nuclear exercise simulating an emergency at a Canadian nuclear power plant. The lessons learned from these experiences will be discussed. (authors)

  6. Detection of X-ray due to gun arcing of high power klystron

    Vogel, Vladimir; Matsumoto, Shuji

    2004-01-01

    X-ray due to a klystron gun arching was monitored by a detector consists of a plastic scintillation fiber and a photo-multiplier. Observation of the X-ray was done during the processing run of an X-band klystron. A clear signal of X-ray burst is observed when the gun arcing occurs. Possibility of the fast protection for a pulse modulator from the gun arcing is discussed. (author)

  7. Identification, Attribution, and Quantification of Highly Heterogeneous Methane Sources Using a Mobile Stable Isotope Analyzer

    Crosson, E.; Rella, C.; Cunningham, K.

    2012-04-01

    Despite methane's importance as a potent greenhouse gas second only to carbon dioxide in the magnitude of its contribution to global warming, natural contributions to the overall methane budget are only poorly understood. A big contributor to this gap in knowledge is the highly spatially and temporally heterogeneous nature of most natural (and for that matter anthropogenic) methane sources. This high degree of heterogeneity, where the methane emission rates can vary over many orders of magnitude on a spatial scale of meters or even centimeters, and over a temporal scale of minutes or even seconds, means that traditional methods of emissions flux estimation, such as flux chambers or eddy-covariance, are difficult or impossible to apply. In this paper we present new measurement methods that are capable of detecting, attributing, and quantifying emissions from highly heterogeneous sources. These methods take full advantage of the new class of methane concentration and stable isotope analyzers that are capable of laboratory-quality analysis from a mobile field platform in real time. In this paper we present field measurements demonstrating the real-time detection of methane 'hot spots,' attribution of the methane to a source process via real-time stable isotope analysis, and quantification of the emissions flux using mobile concentration measurements of the horizontal and vertical atmospheric dispersion, combined with atmospheric transport calculations. Although these techniques are applicable to both anthropogenic and natural methane sources, in this initial work we focus primarily on landfills and fugitive emissions from natural gas distribution, as these sources are better characterized, and because they provide a more reliable and stable source of methane for quantifying the measurement uncertainty inherent in the different methods. Implications of these new technologies and techniques are explored for the quantification of natural methane sources in a variety of

  8. Mobile Measurements of Methane Using High-Speed Open-Path Technology

    Burba, G. G.; Anderson, T.; Ediger, K.; von Fischer, J.; Gioli, B.; Ham, J. M.; Hupp, J. R.; Kohnert, K.; Levy, P. E.; Polidori, A.; Pikelnaya, O.; Price, E.; Sachs, T.; Serafimovich, A.; Zondlo, M. A.; Zulueta, R. C.

    2016-12-01

    Methane plays a critical role in the radiation balance, chemistry of the atmosphere, and air quality. The major anthropogenic sources of CH4 include oil and gas development sites, natural gas distribution networks, landfill emissions, and agricultural production. The majority of oil and gas and urban CH4 emission occurs via variable-rate point sources or diffused spots in topographically challenging terrains (e.g., street tunnels, elevated locations at water treatment plants, vents, etc.). Locating and measuring such CH4 emissions is challenging when using traditional micrometeorological techniques, and requires development of novel approaches. Landfill CH4 emissions traditionally assessed at monthly or longer time intervals are subject to large uncertainties because of the snapshot nature of the measurements and the barometric pumping phenomenon. The majority of agricultural and natural CH4 production occurs in areas with little infrastructure or easily available grid power (e.g., rice fields, arctic and boreal wetlands, tropical mangroves, etc.). A lightweight, high-speed, high-resolution, open-path technology was recently developed for eddy covariance measurements of CH4 flux, with power consumption 30-150 times below other available technologies. It was designed to run on solar panels or a small generator and be placed in the middle of the methane-producing ecosystem without a need for grid power. Lately, this instrumentation has been utilized increasingly more frequently outside of the traditional use on stationary flux towers. These novel approaches include measurements from various moving platforms, such as cars, aircraft, and ships. Projects included mapping of concentrations and vertical profiles, leak detection and quantification, mobile emission detection from natural gas-powered cars, soil CH4 flux surveys, etc. This presentation will describe key projects utilizing the novel lightweight low-power high-resolution open-path technology, and will highlight

  9. Simulation of hydrodynamic effects of salt rejection due to permafrost. Hydrogeological numerical model of density-driven mixing, at a regional scale, due to a high salinity pulse

    Vidstrand, Patrik; Svensson, Urban; Follin, Sven

    2006-10-01

    The main objective of this study is to support the safety assessment of the investigated candidate sites concerning hydrogeological and hydrogeochemical issues related to permafrost. However, a more specific objective of the study is to improve the assessment of processes in relation to permafrost scenarios. The model is based on a mathematical model that includes Darcy velocities, mass conservation, matrix diffusion, and salinity distribution. Gravitational effects are thus fully accounted for. A regional groundwater flow model (POM v1.1, Simpevarp) was used as basis for the simulations. The main results of the model include salinity distributions in time. The general conclusion is that density-driven mixing processes are contained within more permeable deformation zones and that these processes are fast as compared with preliminary permafrost growth rates. The results of the simulation suggest that a repository volume in the rock mass in-between the deterministic deformation zones, approximately 150 m below the permafrost will not experience a high salinity situation due to the salt rejection process

  10. Modeling the manipulator and flipper pose effects on tip over stability of a tracked mobile manipulator

    Dube, C

    2011-11-01

    Full Text Available Mobile manipulators are used in a number of different applications such as bomb disposal, mining robotics, and search and rescue operations. These mobile manipulators are highly susceptible to tip over due to the motion of the manipulator...

  11. Consistent increase in High Asia's runoff due to increasing glacier melt and precipitation

    Lutz, A. F.; Immerzeel, W. W.|info:eu-repo/dai/nl/290472113; Shrestha, A. B.; Bierkens, M. F P|info:eu-repo/dai/nl/125022794

    Rivers originating in the high mountains of Asia are among the most meltwater-dependent river systems on Earth, yet large human populations depend on their resources downstream1. Across High Asias river basins, there is large variation in the contribution of glacier and snow melt to total runoff 2,

  12. Paralysis due to the high tackle - a black spot South African rugby ...

    The high tackle around the neck is illegal but still commonplace in South African rugby. An analysis of 40 rugby players who sustained spinal cord injury during the period 1985 1989 revealed that 8 were injured by a high tackle. The case histories and radiographs of these 8 players were analysed. The majority sustained ...

  13. Analytic calculation of depolarization due to large energy spread in high-energy electron storage rings

    Buon, J.

    1989-08-01

    A new semiclassical and stochastic model of spin diffusion is used to obtain numerical predictions for depolarization enhancement due to beam energy spread. It confirms the results of previous models for the synchrotron sidebands of spin resonances. A satisfactory agreement is obtained with the width of a synchrotron satellite observed at SPEAR. For HERA, TRISTAN, and LEP at Z 0 energy, the depolarization enhancement is of the order of a few units and increases very rapidly with the energy spread. Large reduction of polarization degree is expected in these rings

  14. High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

    Xue Bai-Qing; Wang Sheng-Kai; Han Le; Chang Hu-Dong; Sun Bing; Zhao Wei; Liu Hong-Gang

    2013-01-01

    To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm 2 /V·s are demonstrated on a Ge (111) substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal—oxide—semiconductor (MOS) interface by analyzing the electrical characteristics of HCl- and (NH 4 ) 2 S-passivated samples. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

    2010-01-01

    Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

  16. Hierarchical coordination control of mobile robots

    Adinandra, S.

    2012-01-01

    In the last decade, robotic systems have penetrated human life more than human can imagine. In particular, the multi-mobile robotic systems have faced a fast growing due to the fact that by deploying a large collection of mobile robots the overall system has a high redundancy and offers the

  17. [Mobile hospital -real time mobile telehealthcare system with ultrasound and CT van using high-speed satellite communication-].

    Takizawa, Masaomi; Miyashita, Toyohisa; Murase, Sumio; Kanda, Hirohito; Karaki, Yoshiaki; Yagi, Kazuo; Ohue, Toru

    2003-01-01

    A real-time telescreening system is developed to detect early diseases for rural area residents using two types of mobile vans with a portable satellite station. The system consists of a satellite communication system with 1.5Mbps of the JCSAT-1B satellite, a spiral CT van, an ultrasound imaging van with two video conference system, a DICOM server and a multicast communication unit. The video image and examination image data are transmitted from the van to hospitals and the university simultaneously. Physician in the hospital observes and interprets exam images from the van and watches the video images of the position of ultrasound transducer on screenee in the van. After the observation images, physician explains a results of the examination by the video conference system. Seventy lung CT screening and 203 ultrasound screening were done from March to June 2002. The trial of this real time screening suggested that rural residents are given better healthcare without visit to the hospital. And it will open the gateway to reduce the medical cost and medical divide between city area and rural area.

  18. Study of surface leakage current of AlGaN/GaN high electron mobility transistors

    Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

    2014-01-01

    Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

  19. Growth optimization and characterization of high mobility two-dimensional electron systems in AlAs quantum wells

    Dasgupta, Shivaji

    2009-02-15

    In this work two-dimensional electron systems (2DESs) based on AlAs/AlGaAs heterostructures doped with Si are investigated. The electrons are confined in AlAs quantum wells (QWs) sandwiched between AlGaAs buffers. Analytical calculations and simulations for AlAs QWs are presented in the first chapter. The results show a cross-over width, above which the wide (001)-oriented QWs show double valley occupancy and wide (110)-oriented QWs show single valley occupancy. We solve the Schroedinger equation analytically for anisotropic masses. The solution shows the orientation dependence of the elliptical cyclotron orbit due to the anisotropic mass. We also present an introduction to the Landau level crossings based on g{sup *}m{sup *} product. In the next chapter, we present experimental results for the double-valley (001)-oriented AlAs QWs. We present the different structures of the deep AlAs QWs along with the low temperature magnetotransport data for these QWs. Thereafter, we present the results on shallow AlAs QWs. We achieved a mobility of 4.2 x 10{sup 5} cm{sup 2}/Vs at 330 mK for the deep backside doped AlAs QW. For the shallow QWs, we achieved a mobility of2.3 x 10{sup 5} cm{sup 2}/Vs at 330 mK, for a density of 2.9 x 10{sup 11} cm{sup -2}. From the magneto-transport data, we see evidence of the double-valley occupation for the (001)-oriented AlAs wide QWs. In the next chapter, we present experimental results for the single-valley (110)-oriented AlAs QWs. We deduced the donor binding energy and the doping efficiency for this facet from a doping series of double-sided doped QWs. Thereafter, we designed different structures for the (110)-oriented AlAs QWs, which we present along with their respective low temperature magneto-transport data. We measured one of the double-sided doped AlAs QWs at very high magnetic fields and low temperatures, down to 60 mK. At the end of the chapter, we present a spike feature observed in the magneto-transport data of these QWs. This

  20. The effect of electromagnetic radiation due to mobile phone use on thyroid function in medical students studying in a medical college in South India

    Nikita Mary Baby

    2017-01-01

    Full Text Available Background: Enormous increase in mobile phone use throughout the world raises widespread concerns about its possible detrimental effect on human health. Radiofrequency waves are emitted by cell phones. They are non-ionising and the effect on the thyroid gland is part of their non thermal effects. The thyroid gland may be particularly vulnerable to this effect because of its normal anatomical position. Materials and Methods: The study was done to explore the association between radiation exposure and thyroid dysfunction among mobile phone users. It had an exploratory design and unit survey method to collect information from all medical students in a medical college in South India. Inclusion criteria included active use of mobile phone prior to and during the study period. Criteria for exclusion was presence of pre-existsting thyroid disease,thyroid nodule,thyroid goitre/nodule and altered thyroid function. Results: The sample size was 83 undergraduate students. 71% of respondents had no family history of thyroid illness. Among the remainder,20.5% had a first degree relative with thyroid dysfunction,8.4% had a second degree relative affected. Clinical examination revealed that 79.5% of the respondents were normal,13.6% had thyroid swelling,3.6% had symptoms of thyroid dysfunction and 3.6% had both thyroid swelling and symptoms of thyroid dysfunction. 53% of the respondents spent 0.5 hrs on an average talking on the phone daily,28.9% spent 1.5 hrs daily and 10.8% of respondents spent over 3.5 hours. We found there was a significant correlation between total radiation exposure and an increase in TSH among both groups –in those with and without family history of thyroid illness. Conclusion: In our study there was a significant correlation between total radiation exposure and increasing TSH values among both all respondents.

  1. Photocathode fatigue of L-24 PM head due to high intensity light pulses

    Bailey, K.F.

    1980-01-01

    The sensitivity of radiation detectors which utilizes photomultipliers was determined after exposing the multiplier phototubes to high intensity light pulses. Test results found that generally less than a 5% change was found

  2. An intelligent detection method for high-field asymmetric waveform ion mobility spectrometry.

    Li, Yue; Yu, Jianwen; Ruan, Zhiming; Chen, Chilai; Chen, Ran; Wang, Han; Liu, Youjiang; Wang, Xiaozhi; Li, Shan

    2018-04-01

    In conventional high-field asymmetric waveform ion mobility spectrometry signal acquisition, multi-cycle detection is time consuming and limits somewhat the technique's scope for rapid field detection. In this study, a novel intelligent detection approach has been developed in which a threshold was set on the relative error of α parameters, which can eliminate unnecessary time spent on detection. In this method, two full-spectrum scans were made in advance to obtain the estimated compensation voltage at different dispersion voltages, resulting in a narrowing down of the whole scan area to just the peak area(s) of interest. This intelligent detection method can reduce the detection time to 5-10% of that of the original full-spectrum scan in a single cycle.

  3. Photo-Detection on Narrow-Bandgap High-Mobility 2D Semiconductors

    Charnas, Adam; Qiu, Gang; Deng, Yexin; Wang, Yixiu; Du, Yuchen; Yang, Lingming; Wu, Wenzhuo; Ye, Peide

    Photo-detection and energy harvesting device concepts have been demonstrated widely in 2D materials such as graphene, TMDs, and black phosphorus. In this work, we demonstrate anisotropic photo-detection achieved using devices fabricated from hydrothermally grown narrow-bandgap high-mobility 2D semiconductor. Back-gated FETs were fabricated by transferring the 2D flakes onto a Si/SiO2 substrate and depositing various metal contacts across the flakes to optimize the access resistance for optoelectronic devices. Photo-responsivity was measured and mapped by slightly biasing the devices and shining a laser spot at different locations of the device to observe and map the resulting photo-generated current. Optimization of the Schottky barrier height for both n and p at the metal-2D interfaces using asymmetric contact engineering was performed to improve device performance.

  4. Provision of 3G Mobile Services in Sparsely Populated Areas Using High Altitude Platforms

    J. Holis

    2008-04-01

    Full Text Available This paper deals with the application of High Altitude Platforms for the provision of third generation mobile services in sparsely-populated areas or in developing countries. It focuses on the behavior of large cells provided via a multiple HAP deployment and shows the possibilities of using small cells located inside these large cells to serve hot-spot areas. The impact of the different types of HAP antenna masks and their adjustment on cell capacity and the quality of coverage is presented. The main parameter of the antenna radiation pattern under investigation is the power roll-off at the cell edge. Optimal values of this parameter are presented for different scenarios. Simulations of system level parameters were based on an iteration loops approach.

  5. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

    Imas Noviyana

    2017-06-01

    Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

  6. Very high frame rate volumetric integration of depth images on mobile devices.

    Kähler, Olaf; Adrian Prisacariu, Victor; Yuheng Ren, Carl; Sun, Xin; Torr, Philip; Murray, David

    2015-11-01

    Volumetric methods provide efficient, flexible and simple ways of integrating multiple depth images into a full 3D model. They provide dense and photorealistic 3D reconstructions, and parallelised implementations on GPUs achieve real-time performance on modern graphics hardware. To run such methods on mobile devices, providing users with freedom of movement and instantaneous reconstruction feedback, remains challenging however. In this paper we present a range of modifications to existing volumetric integration methods based on voxel block hashing, considerably improving their performance and making them applicable to tablet computer applications. We present (i) optimisations for the basic data structure, and its allocation and integration; (ii) a highly optimised raycasting pipeline; and (iii) extensions to the camera tracker to incorporate IMU data. In total, our system thus achieves frame rates up 47 Hz on a Nvidia Shield Tablet and 910 Hz on a Nvidia GTX Titan XGPU, or even beyond 1.1 kHz without visualisation.

  7. New Mutation Identified in the SRY Gene High Mobility Group (HMG

    Feride İffet Şahin

    2013-06-01

    Full Text Available Mutations in the SRY gene prevent the differentiation of the fetal gonads to testes and cause developing female phenotype, and as a result sex reversal and pure gonadal dysgenesis (Swyer syndrome can be developed. Different types of mutations identified in the SRY gene are responsible for 15% of the gonadal dysgenesis. In this study, we report a new mutation (R132P in the High Mobility Group (HMG region of SRY gene was detected in a patient with primary amenorrhea who has 46,XY karyotype. This mutation leads to replacement of the polar and basic arginine with a nonpolar hydrophobic proline residue at aminoacid 132 in the nuclear localization signal region of the protein. With this case report we want to emphasize the genetic approach to the patients with gonadal dysgenesis. If Y chromosome is detected during cytogenetic analysis, revealing the presence of the SRY gene and identification of mutations in this gene by sequencing analysis is become important in.

  8. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

    Tan Ren-Bing; Qin Hua; Zhang Xiao-Yu; Xu Wen

    2013-01-01

    We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi—Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi—Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source—drain bias voltage besides the gate voltage (change of the electron density)

  9. Tooth enamel oxygen "isoscapes" show a high degree of human mobility in prehistoric Britain.

    Pellegrini, Maura; Pouncett, John; Jay, Mandy; Pearson, Mike Parker; Richards, Michael P

    2016-10-07

    A geostatistical model to predict human skeletal oxygen isotope values (δ 18 O p ) in Britain is presented here based on a new dataset of Chalcolithic and Early Bronze Age human teeth. The spatial statistics which underpin this model allow the identification of individuals interpreted as 'non-local' to the areas where they were buried (spatial outliers). A marked variation in δ 18 O p is observed in several areas, including the Stonehenge region, the Peak District, and the Yorkshire Wolds, suggesting a high degree of human mobility. These areas, rich in funerary and ceremonial monuments, may have formed focal points for people, some of whom would have travelled long distances, ultimately being buried there. The dataset and model represent a baseline for future archaeological studies, avoiding the complex conversions from skeletal to water δ 18 O values-a process known to be problematic.

  10. Tooth enamel oxygen “isoscapes” show a high degree of human mobility in prehistoric Britain

    Pellegrini, Maura; Pouncett, John; Jay, Mandy; Pearson, Mike Parker; Richards, Michael P.

    2016-10-01

    A geostatistical model to predict human skeletal oxygen isotope values (δ18Op) in Britain is presented here based on a new dataset of Chalcolithic and Early Bronze Age human teeth. The spatial statistics which underpin this model allow the identification of individuals interpreted as ‘non-local’ to the areas where they were buried (spatial outliers). A marked variation in δ18Op is observed in several areas, including the Stonehenge region, the Peak District, and the Yorkshire Wolds, suggesting a high degree of human mobility. These areas, rich in funerary and ceremonial monuments, may have formed focal points for people, some of whom would have travelled long distances, ultimately being buried there. The dataset and model represent a baseline for future archaeological studies, avoiding the complex conversions from skeletal to water δ18O values-a process known to be problematic.

  11. The role of high mobility group box 1(HMGB1)in the pathogenesis of kidney diseases

    Qingjie Chen; Xiaofeng Guan; Xiaocong Zuo; Jianglin Wang; Wenjun Yin

    2016-01-01

    High mobility group box 1(HMGB1) is a nuclear protein that can bind to DNA and act as a co-factor for gene transcription. When released into extracellular fluid, it plays a proinflammatory role by acting as a damage-associated molecular pattern molecule(DAMP)(also known as an alarmin) to initiate innate immune responses by activating multiple cell surface receptors such as the receptor for advanced glycation end-products(RAGE) and toll-like receptors(TLRs), TLR2, TLR4 or TLR9. This proinflammatory role is now considered to be important in the pathogenesis of a wide range of kidney diseases whether they result from hemodynamic changes, renal tubular epithelial cell apoptosis, kidney tissue fibrosis or inflammation. This review summarizes our current understanding of the role of HMGB1 in kidney diseases and how the HMGB1-mediated signaling pathway may constitute a new strategy for the treatment of kidney diseases.

  12. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  13. Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

    Zervos, Ch; Adikimenakis, A; Bairamis, A; Kostopoulos, A; Kayambaki, M; Tsagaraki, K; Konstantinidis, G; Georgakilas, A

    2016-01-01

    The current instabilities of high electron mobility transistors (HEMTs), based on thin double AlN/GaN/AlN heterostructures (∼0.5 μm total thickness), directly grown on sapphire substrates, have been analyzed and compared for different AlN top barrier thicknesses. The structures were capped by 1 nm GaN and non-passivated 1 μm gate-length devices were processed. Pulsed I–V measurements resulted in a maximum cold pulsed saturation current of 1.4 A mm −1 at a gate-source voltage of +3 V for 3.7 nm AlN thickness. The measured gate and drain lag for 500 ns pulse-width varied between 6%–12% and 10%–18%, respectively. Furthermore, a small increase in the threshold voltage was observed for all the devices, possibly due to the trapping of electrons under the gate contact. The off-state breakdown voltage of V br  = 70 V, for gate-drain spacing of 2 μm, was approximately double the value measured for a single AlN/GaN HEMT structure grown on a thick GaN buffer layer. The results suggest that the double AlN/GaN/AlN heterostructures may offer intrinsic advantages for the breakdown and current stability characteristics of high current HEMTs. (paper)

  14. Toolbox for Urban Mobility Simulation: High Resolution Population Dynamics for Global Cities

    Bhaduri, B. L.; Lu, W.; Liu, C.; Thakur, G.; Karthik, R.

    2015-12-01

    In this rapidly urbanizing world, unprecedented rate of population growth is not only mirrored by increasing demand for energy, food, water, and other natural resources, but has detrimental impacts on environmental and human security. Transportation simulations are frequently used for mobility assessment in urban planning, traffic operation, and emergency management. Previous research, involving purely analytical techniques to simulations capturing behavior, has investigated questions and scenarios regarding the relationships among energy, emissions, air quality, and transportation. Primary limitations of past attempts have been availability of input data, useful "energy and behavior focused" models, validation data, and adequate computational capability that allows adequate understanding of the interdependencies of our transportation system. With increasing availability and quality of traditional and crowdsourced data, we have utilized the OpenStreetMap roads network, and has integrated high resolution population data with traffic simulation to create a Toolbox for Urban Mobility Simulations (TUMS) at global scale. TUMS consists of three major components: data processing, traffic simulation models, and Internet-based visualizations. It integrates OpenStreetMap, LandScanTM population, and other open data (Census Transportation Planning Products, National household Travel Survey, etc.) to generate both normal traffic operation and emergency evacuation scenarios. TUMS integrates TRANSIMS and MITSIM as traffic simulation engines, which are open-source and widely-accepted for scalable traffic simulations. Consistent data and simulation platform allows quick adaption to various geographic areas that has been demonstrated for multiple cities across the world. We are combining the strengths of geospatial data sciences, high performance simulations, transportation planning, and emissions, vehicle and energy technology development to design and develop a simulation

  15. A guide to calculating habitat-quality metrics to inform conservation of highly mobile species

    Bieri, Joanna A.; Sample, Christine; Thogmartin, Wayne E.; Diffendorfer, James E.; Earl, Julia E.; Erickson, Richard A.; Federico, Paula; Flockhart, D. T. Tyler; Nicol, Sam; Semmens, Darius J.; Skraber, T.; Wiederholt, Ruscena; Mattsson, Brady J.

    2018-01-01

    Many metrics exist for quantifying the relative value of habitats and pathways used by highly mobile species. Properly selecting and applying such metrics requires substantial background in mathematics and understanding the relevant management arena. To address this multidimensional challenge, we demonstrate and compare three measurements of habitat quality: graph-, occupancy-, and demographic-based metrics. Each metric provides insights into system dynamics, at the expense of increasing amounts and complexity of data and models. Our descriptions and comparisons of diverse habitat-quality metrics provide means for practitioners to overcome the modeling challenges associated with management or conservation of such highly mobile species. Whereas previous guidance for applying habitat-quality metrics has been scattered in diversified tracks of literature, we have brought this information together into an approachable format including accessible descriptions and a modeling case study for a typical example that conservation professionals can adapt for their own decision contexts and focal populations.Considerations for Resource ManagersManagement objectives, proposed actions, data availability and quality, and model assumptions are all relevant considerations when applying and interpreting habitat-quality metrics.Graph-based metrics answer questions related to habitat centrality and connectivity, are suitable for populations with any movement pattern, quantify basic spatial and temporal patterns of occupancy and movement, and require the least data.Occupancy-based metrics answer questions about likelihood of persistence or colonization, are suitable for populations that undergo localized extinctions, quantify spatial and temporal patterns of occupancy and movement, and require a moderate amount of data.Demographic-based metrics answer questions about relative or absolute population size, are suitable for populations with any movement pattern, quantify demographic

  16. Effects of flooding on phosphorus and iron mobilization in highly weathered soils: Short-term effects and mechanisms

    Maranguit, Deejay

    2017-04-01

    The strong affinity of phosphorus (P) to iron (Fe) oxides and hydroxides in highly weathered tropical soils limits P availability and therefore plant productivity. In flooded soils, however, P fixed by Fe oxides and hydroxides can be released and transformed to a more available form because of Fe3+ reduction to Fe2+. These P dynamics in flooded soils are well documented for rice paddies. Such effects are much less studied in other land-use types under the influence of seasonal flooding, especially in the tropics during heavy monsoon rains. The aim of this study was to investigate the mobilization of P during flooding leading to anaerobic conditions in topsoil and subsoil horizons depending on land-use type. Samples were collected in highly weathered soils from four replicate sites under natural rainforest, jungle rubber, rubber and oil palm plantations in Sumatra, Indonesia. Topsoil and subsoil were taken to ensure a wide range of soil organic matter (SOM) and P contents. Soils were incubated under anaerobic, flooded conditions at 30 ± 1 oC for 60 days. Our results confirmed the hypothesis that soil flooding mobilizes P and increases P availability. Two distinct and opposite phases, however, were observed upon flooding. During the first three weeks of flooding, the dissolved P (DP) concentration peaked, simultaneously with a peak of dissolved Fe2+ (DFe2+) and dissolved organic carbon (DOC) in the soil solution. After three weeks, P availability in soils decreased, although Fe-P and available P did not reach initial, pre-flooding levels. Accordingly, Fe dissolution and P mobilization were reversible processes. Furthermore, land-use type influenced the impacts of flooding on P and Fe forms mainly in the topsoil, where P dissolution and availability were generally higher under forest and, to a lesser extent, under jungle rubber. A positive correlation between DOC and DFe2+ (R2 = 0.42) in topsoil indicates that the intensity of microbially-mediated Fe3+ reduction is

  17. Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

    Fujii, M.; Ishikawa, Y.; Ishihara, R.; Van der Cingel, J.; Mofrad, M.R.T.; Horita, M.; Uraoka, Y.

    2013-01-01

    In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C

  18. High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

    Wen-Ping, Gu; Huan-Tao, Duan; Jin-Yu, Ni; Yue, Hao; Jin-Cheng, Zhang; Qian, Feng; Xiao-Hua, Ma

    2009-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current I Dsat , maximal transconductance g m , and the positive shift of threshold voltage V TH at high drain-source voltage V DS . The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress. After the hot carrier stress with V DS = 20 V and V GS = 0 V applied to the device for 10 4 sec, the SiN passivation decreases the stress-induced degradation of I Dsat from 36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of I Dsat , which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Water mobility in the endosperm of high beta-glucan barley mutants as studied by nuclear magnetic resonance imaging

    Seefeldt, Helene Fast; van den Berg, Frans W.J.; Köckenberger, Walter

    2007-01-01

    1H NMR imaging (MRI) was used as a noninvasive technique to study water distribution and mobility in hydrated barley (Hordeum vulgare L.) seeds of accessions with varying content of beta glucan (BG), a highly hygroscopic cell wall component. High contents of BG in barley are unfavorable in malting...... where it leads to clotting of filters and hazing of beer as well as in animal feed where it hinders the rapid uptake of energy. However, a high content of BG has a positive nutritional effect, as it lowers the cholesterol and the glycaemic index. It was studied whether water distribution and mobility...... were related to content and location of BG. Water mobility was investigated by following the rate and mode of desiccation in hydrated single seeds. In order to determine the different water components, a multispin echo experiment was set up to reveal the T2 transverse relaxation rates of water within...

  20. Residual gas entering high density hydrogen plasma: rarefaction due to rapid heating

    N. den Harder,; D.C. Schram,; W. J. Goedheer,; de Blank, H. J.; M. C. M. van de Sanden,; van Rooij, G. J.

    2015-01-01

    The interaction of background molecular hydrogen with magnetized (0.4 T) high density (1–5 × 10 20  m −3 ) low temperature (∼3 eV) hydrogen plasma was inferred from the Fulcher band emission in the linear plasma generator Pilot-PSI. In the plasma center,

  1. Paralysis due to the high tackle - a black spot South African rugby

    1991-05-18

    May 18, 1991 ... hyper-extension during a tackle from the rear. Disturbingly, 4 of the 8 players sustained ·complete permanent paralysis. This was consequent upon the orthopaedic injuries sustained. - specifically facet dislocations or 'tear-drop' fractures, both injuries carrying with them a high risk of serious spinal cord.

  2. High frequency audiometry in prospective clinical research of ototoxicity due to platinum derivatives

    van der Hulst, R. J.; Dreschler, W. A.; Urbanus, N. A.

    1988-01-01

    The results of clinical use of routine high frequency audiometry in monitoring the ototoxic side effects of platinum and its derivatives are described in this prospective study. After demonstrating the reproducibility of the technique, we discuss the first results of an analysis of ototoxic side

  3. Student-Generated Protective Behaviors to Avert Severe Harm Due to High-Risk Alcohol Consumption

    Smith, Sandi W.; LaPlante, Carolyn; Wibert, Wilma Novales; Mayer, Alex; Atkin, Charles K.; Klein, Katherine; Glazer, Edward; Martell, Dennis

    2011-01-01

    High-risk alcohol consumption is a significant problem on college campuses that many students see as a rite of passage in their development into adulthood. Developing effective prevention campaigns designed to lessen or avert the risks associated with alcohol consumption entails understanding how students perceive harmful consequences as well as…

  4. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

    2014-01-01

    Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

  5. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

    Chan, Silvia H; DenBaars, Steven P; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; Mishra, Umesh K

    2016-01-01

    This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N 2  + NH 3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm 2 V −1 s −1 (R sh  = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al 2 O 3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas. (paper)

  6. Experimental Facility for Checking the Possibility to Obtain Super-High Temperature Due to Acoustic Cavitation

    Miller, M B; Sobolev, Yu G; Kostenko, B F

    2004-01-01

    An experimental facility developed for checking the possibility to obtain super-high temperature sufficient for thermonuclear reaction D($d, n$)$^{3}$He in an acoustic cavitation is described. The acoustic part of the instrumentation consists of a resonator and a system exciting high amplitude of the acoustic field within the resonator. The cavitation process is controlled with the use of fast neutron pulses. The instrument includes a system of pumping out solute gases from the liquid (acetone enriched with deuterium up to 99{\\%}) without losses of matter. Measuring of the field is based on the calibration procedure including observation of sonoluminescence. The system of detection and identification of D($d, n$)$^{3}$He reaction is based on a scintillation detector of fast neutrons and a system of measuring multiparameter events by the correlation technique with separation of the neutrons from the $\\gamma $-radiation background (pulse shape discrimination).

  7. Aberrations due to solenoid focusing of a multiply charged high-current ion beam

    Grégoire, G; Lisi, N; Schnuriger, J C; Scrivens, R; Tambini, J

    2000-01-01

    At the output of a laser ion source, a high current of highly charged ions with a large range of charge states is available. The focusing of such a beam by magnetic elements causes a nonlinear space-charge field to develop which can induce large aberrations and emittance growth in the beam. Simulation of the beam from the CERN laser ion source will be presented for an ideal magnetic and electrostatic system using a radially symmetric model. In addition, the three dimensional software KOBRA3 is used for the simulation of the solenoid line. The results of these simulations will be compared with experiments performed on the CERN laser ion source with solenoids (resulting in a hollow beam) and a series of gridded electrostatic lenses. (5 refs).

  8. Preventing performance drops of coal mills due to high moisture content

    Odgaard, Peter Fogh; Stoustrup, Jakob; Mataji, B.

    2007-01-01

    Coal mills pulverize and dry the coal dust before it is blown into the furnace in coal-fired power plants. The coal mills can only deliver the requested coal flow if certain conditions are fulfilled. These are normally considered as constraints on individual variables. However, combinations of more...... than one variable might cause problems even though these individually variables are in an acceptable region. This paper deals with such a problem. The combination of a high load of the power plant, a large load change and high moisture content in the coal, can force the coal mill into a state where...... coal is accumulated instead of being blown into the furnace. This paper suggests a simple method for preventing the accumulation of the coal in the mill, by limiting the requested coal flow considering the coal moisture content and the temperature outside the mill.  ...

  9. The Decline of Soil Infiltration Capacity Due To High Elevation Groundwater

    Isri Ronald Mangangka

    2008-01-01

    Infiltration capacity of soil mainly depends on two factors; the particle size and the moisture content of the soil. Groundwater increases the soil moisture, not only below the water table but also within the capillary zone, above the water table. Field experiment in a high groundwater area was conducted to understand the relationship among the groundwater, soil moisture and infiltration capacity. Using a single ring infiltrometer, the effect of groundwater in the infiltration rate was observ...

  10. Acute intraparenchymal spinal cord injury in a cat due to high-rise syndrome.

    Cruz-Arámbulo, Robert; Nykamp, Stephanie

    2012-03-01

    A 9-year-old spayed female Bengal Red cat was evaluated for high-rise syndrome. The cat had paraplegia of the hind limbs, intact reflexes and pain perception, and hyperesthesia in the caudal thoracic area. Mentation, cranial nerve function, forelimb proprioceptive responses, and spinal reflexes were normal. There were no abnormalities on radiographs or computed tomography scan, but magnetic resonance imaging revealed a hyperintense intraparenchymal spinal cord lesion on T2-weighted and T2 fat saturation images.

  11. Acute intraparenchymal spinal cord injury in a cat due to high-rise syndrome

    Cruz–Arámbulo, Robert; Nykamp, Stephanie

    2012-01-01

    A 9-year-old spayed female Bengal Red cat was evaluated for high-rise syndrome. The cat had paraplegia of the hind limbs, intact reflexes and pain perception, and hyperesthesia in the caudal thoracic area. Mentation, cranial nerve function, forelimb proprioceptive responses, and spinal reflexes were normal. There were no abnormalities on radiographs or computed tomography scan, but magnetic resonance imaging revealed a hyperintense intraparenchymal spinal cord lesion on T2-weighted and T2 fat...

  12. False-positive buprenorphine EIA urine toxicology results due to high dose morphine: a case report.

    Tenore, Peter L

    2012-01-01

    In monitoring a patient with chronic pain who was taking high-dose morphine and oxycodone with weekly urine enzymatic immunoassay (EIA) toxicology testing, the authors noted consistent positives for buprenorphine. The patient was not taking buprenorphine, and gas chromatography/mass spectroscopy (GCMS) testing on multiple samples revealed no buprenorphine, indicating a case of false-positive buprenorphine EIAs in a high-dose opiate case. The authors discontinued oxycodone for a period of time and then discontinued morphine. Urine monitoring with EIAs and GCMS revealed false-positive buprenorphine EIAs, which remained only when the patient was taking morphine. When taking only oxycodone and no morphine, urine samples became buprenorphine negative. When morphine was reintroduced, false-positive buprenorphine results resumed. Medical practitioners should be aware that high-dose morphine (with morphine urine levels turning positive within the 15,000 to 28,000 mg/mL range) may produce false-positive buprenorphine EIAs with standard urine EIA toxicology testing.

  13. Highly anisotropic mobility in solution processed TIPS-pentacene film studied by independently driven four GaIn probes

    Yoshimoto, Shinya; Takahashi, Kohtaro; Suzuki, Mitsuharu; Yamada, Hiroko; Miyahara, Ryosuke; Mukai, Kozo; Yoshinobu, Jun

    2017-08-01

    We have studied in-plane anisotropy in the field-effect mobility of solution-processed organic semiconductor 6,13-bis(triisopropylsilylethynyl)pentacene by using independently driven four gallium indium (Ga-In) probes. Liquid-metal Ga-In probes are highly effective for reproducible conductivity measurements of organic thin films. We demonstrated that a high mobility anisotropy of 44 was obtained by using a square four-probe method and a feedback circuit to keep the channel potential constant. The present method minimized the influences of the contact resistance and the insensitivity of anisotropy in a linear arrangement in two-dimensional field-effect transistors.

  14. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

    Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

    2014-01-01

    One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm 2 /V s at a low carrier concentration of 7.9 × 10 +19  cm −3 . This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

  15. Mobile platform security

    Asokan, N; Dmitrienko, Alexandra

    2013-01-01

    Recently, mobile security has garnered considerable interest in both the research community and industry due to the popularity of smartphones. The current smartphone platforms are open systems that allow application development, also for malicious parties. To protect the mobile device, its user, and other mobile ecosystem stakeholders such as network operators, application execution is controlled by a platform security architecture. This book explores how such mobile platform security architectures work. We present a generic model for mobile platform security architectures: the model illustrat

  16. Two high-mobility group box domains act together to underwind and kink DNA

    Sánchez-Giraldo, R.; Acosta-Reyes, F. J. [Universitat Politecnica de Catalunya, 08028 Barcelona (Spain); Malarkey, C. S. [University of Colorado School of Medicine, Aurora, CO 80045 (United States); Saperas, N. [Universitat Politecnica de Catalunya, 08028 Barcelona (Spain); Churchill, M. E. A., E-mail: mair.churchill@ucdenver.edu [University of Colorado School of Medicine, Aurora, CO 80045 (United States); Campos, J. L., E-mail: mair.churchill@ucdenver.edu [Universitat Politecnica de Catalunya, 08028 Barcelona (Spain)

    2015-06-30

    The crystal structure of HMGB1 box A bound to an unmodified AT-rich DNA fragment is reported at a resolution of 2 Å. A new mode of DNA recognition for HMG box proteins is found in which two box A domains bind in an unusual configuration generating a highly kinked DNA structure. High-mobility group protein 1 (HMGB1) is an essential and ubiquitous DNA architectural factor that influences a myriad of cellular processes. HMGB1 contains two DNA-binding domains, box A and box B, which have little sequence specificity but have remarkable abilities to underwind and bend DNA. Although HMGB1 box A is thought to be responsible for the majority of HMGB1–DNA interactions with pre-bent or kinked DNA, little is known about how it recognizes unmodified DNA. Here, the crystal structure of HMGB1 box A bound to an AT-rich DNA fragment is reported at a resolution of 2 Å. Two box A domains of HMGB1 collaborate in an unusual configuration in which the Phe37 residues of both domains stack together and intercalate the same CG base pair, generating highly kinked DNA. This represents a novel mode of DNA recognition for HMGB proteins and reveals a mechanism by which structure-specific HMG boxes kink linear DNA.

  17. Isolated photosystem I reaction centers on a functionalized gated high electron mobility transistor.

    Eliza, Sazia A; Lee, Ida; Tulip, Fahmida S; Mostafa, Salwa; Greenbaum, Elias; Ericson, M Nance; Islam, Syed K

    2011-09-01

    In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale (~6 nm) reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs. © 2011 IEEE

  18. Two high-mobility group box domains act together to underwind and kink DNA

    Sánchez-Giraldo, R.; Acosta-Reyes, F. J.; Malarkey, C. S.; Saperas, N.; Churchill, M. E. A.; Campos, J. L.

    2015-01-01

    The crystal structure of HMGB1 box A bound to an unmodified AT-rich DNA fragment is reported at a resolution of 2 Å. A new mode of DNA recognition for HMG box proteins is found in which two box A domains bind in an unusual configuration generating a highly kinked DNA structure. High-mobility group protein 1 (HMGB1) is an essential and ubiquitous DNA architectural factor that influences a myriad of cellular processes. HMGB1 contains two DNA-binding domains, box A and box B, which have little sequence specificity but have remarkable abilities to underwind and bend DNA. Although HMGB1 box A is thought to be responsible for the majority of HMGB1–DNA interactions with pre-bent or kinked DNA, little is known about how it recognizes unmodified DNA. Here, the crystal structure of HMGB1 box A bound to an AT-rich DNA fragment is reported at a resolution of 2 Å. Two box A domains of HMGB1 collaborate in an unusual configuration in which the Phe37 residues of both domains stack together and intercalate the same CG base pair, generating highly kinked DNA. This represents a novel mode of DNA recognition for HMGB proteins and reveals a mechanism by which structure-specific HMG boxes kink linear DNA

  19. Isolated Photosystem I Reaction Centers on a Functionalized Gated High Electron Mobility Transistor

    Eliza, Sazia A. [University of Tennessee, Knoxville (UTK); Lee, Ida [ORNL; Tulip, Fahmida S [ORNL; Islam, Syed K [University of Tennessee, Knoxville (UTK); Mostafa, Salwa [University of Tennessee, Knoxville (UTK); Greenbaum, Elias [ORNL; Ericson, Milton Nance [ORNL

    2011-01-01

    In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale nm reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs.

  20. Thermoacoustic contrast of prostate cancer due to heating by very high frequency irradiation

    Patch, S K; Hull, D; Thomas, M; Jacobsohn, K; See, WA; Griep, SK

    2015-01-01

    Applying the thermoacoustic (TA) effect to diagnostic imaging was first proposed in the 1980s. The object under test is irradiated by high-power pulses of electromagnetic energy, which heat tissue and cause thermal expansion. Outgoing TA pressure pulses are detected by ultrasound transducers and reconstructed to provide images of the object. The TA contrast mechanism is strongly dependent upon the frequency of the irradiating electromagnetic pulse. When very high frequency (VHF) electromagnetic irradiation is utilized, TA signal production is driven by ionic content. Prostatic fluids contain high levels of ionic metabolites, including citrate, zinc, calcium, and magnesium. Healthy prostate glands produce more ionic metabolites than diseased glands. VHF pulses are therefore expected to generate stronger TA signal in healthy prostate glands than in diseased glands. A benchtop system for performing ex vivo TA computed tomography with VHF energy is described and images are presented. The system utilizes irradiation pulses of 700 ns duration exceeding 20 kW power. Reconstructions frequently visualize anatomic landmarks such as the urethra and verumontanum. TA reconstructions from three freshly excised human prostate glands with little, moderate, and severe cancerous involvement are compared with histology. TA signal strength is negatively correlated with percent cancerous involvement in this small sample size. For the 45 regions of interest analyzed, a reconstruction value of 0.4 mV provides 100% sensitivity but only 29% specificity. This sample size is far too small to draw sweeping conclusions, but the results warrant a larger volume study including comparison of TA images to the gold standard, histology. (paper)

  1. A Case of Pneumothorax due to High-Flow Nasal Cannula Oxygen Therapy

    Çapan Konca

    2017-08-01

    Full Text Available Invasive and noninvasive mechanical ventilation (MV applications are used for patients with respiratory insufficiency. Noninvasive MV has been increasingly used in pediatric intensive care units in recent years. For this purpose, high-flow nasal cannula (HFNC oxygen therapy is a treatment method that has been increasingly used. Despite the numerous studies reporting the advantages of this method, there are also a few studies reporting that undesirable conditions can be observed. In this paper, in order to contribute to the literature, we present a 3-month-old baby who developed pneumothorax during HFNC implementation.

  2. Bulk damage and absorption in fused silica due to high-power laser applications

    Nürnberg, F.; Kühn, B.; Langner, A.; Altwein, M.; Schötz, G.; Takke, R.; Thomas, S.; Vydra, J.

    2015-11-01

    Laser fusion projects are heading for IR optics with high broadband transmission, high shock and temperature resistance, long laser durability, and best purity. For this application, fused silica is an excellent choice. The energy density threshold on IR laser optics is mainly influenced by the purity and homogeneity of the fused silica. The absorption behavior regarding the hydroxyl content was studied for various synthetic fused silica grades. The main absorption influenced by OH vibrational excitation leads to different IR attenuations for OH-rich and low-OH fused silica. Industrial laser systems aim for the maximum energy extraction possible. Heraeus Quarzglas developed an Yb-doped fused silica fiber to support this growing market. But the performance of laser welding and cutting systems is fundamentally limited by beam quality and stability of focus. Since absorption in the optical components of optical systems has a detrimental effect on the laser focus shift, the beam energy loss and the resulting heating has to be minimized both in the bulk materials and at the coated surfaces. In collaboration with a laser research institute, an optical finisher and end users, photo thermal absorption measurements on coated samples of different fused silica grades were performed to investigate the influence of basic material properties on the absorption level. High purity, synthetic fused silica is as well the material of choice for optical components designed for DUV applications (wavelength range 160 nm - 260 nm). For higher light intensities, e.g. provided by Excimer lasers, UV photons may generate defect centers that effect the optical properties during usage, resulting in an aging of the optical components (UV radiation damage). Powerful Excimer lasers require optical materials that can withstand photon energy close to the band gap and the high intensity of the short pulse length. The UV transmission loss is restricted to the DUV wavelength range below 300 nm and

  3. High concentrations of cadmium, cerium and lanthanum in indoor air due to environmental tobacco smoke

    Böhlandt, Antje; Schierl, Rudolf; Diemer, Juergen; Koch, Christoph; Bolte, Gabriele; Kiranoglu, Mandy; Fromme, Hermann; Nowak, Dennis

    2012-01-01

    Background: Environmental tobacco smoke (ETS) is one of the most important sources for indoor air pollution and a substantial threat to human health, but data on the concentrations of the trace metals cerium (Ce) and lanthanum (La) in context with ETS exposure are scarce. Therefore the aim of our study was to quantify Ce and La concentrations in indoor air with high ETS load. Methods: In two subsequent investigations Ce, La and cadmium (Cd) in 3 smokers' (11 samples) and 7 non-smokers' (28 samples) households as well as in 28 hospitality venues in Southern Germany were analysed. Active sampling of indoor air was conducted continuously for seven days in every season in the smokers' and non-smokers' residences, and for 4 h during the main visiting hours in the hospitality venues (restaurants, pubs, and discotheques). Results: In terms of residences median levels of Cd were 0.1 ng/m 3 for non-smokers' and 0.8 ng/m 3 for smokers' households. Median concentrations of Ce were 0.4 ng/m 3 and 9.6 ng/m 3 , and median concentrations of La were 0.2 ng/m 3 and 5.9 ng/m 3 for non-smokers' and for smokers' households, respectively. In the different types of hospitality venues median levels ranged from 2.6 to 9.7 ng/m 3 for Cd, from 18.5 to 50.0 ng/m 3 for Ce and from 10.6 to 23.0 ng/m 3 for La with highest median levels in discotheques. Conclusions: The high concentrations of Ce and La found in ETS enriched indoor air of smokers' households and hospitality venues are an important finding as Ce and La are associated with adverse health effects and data on this issue are scarce. Further research on their toxicological, human and public health consequences is urgently required. - Highlights: ► We quantified cer, lanthanum and cadmium concentrations in indoor air. ► Cer and lanthanum concentrations were high in tobacco smoke enriched locations. ► Both elements can be considered as good markers for indoor air quality.

  4. Changes in mechanical properties due to gamma irradiation of high-density polyethylene (HDPE

    S. S. Cota

    2007-06-01

    Full Text Available This paper presents an experimental analysis of the effect of dose and dose rate parameters during gamma irradiation of high-density polyethylene (HDPE samples. Considerations concerning the influence of these parameters on HDPE mechanical strength properties as a result of the predominance of oxidative degradation or of cross-linking are presented. The experimental results show an improvement of HDPE mechanical strength as dose increases, indicating the predominance of cross-linking over oxidative degradation and that lower doses are necessary to obtain a similar change in resistance parameters when radiation is applied at lower dose rates, showing that gamma radiation affects the HDPE in a more efficient way at lower dose rates.

  5. Stress and Damage in Polymer Matrix Composite Materials Due to Material Degradation at High Temperatures

    McManus, Hugh L.; Chamis, Christos C.

    1996-01-01

    This report describes analytical methods for calculating stresses and damage caused by degradation of the matrix constituent in polymer matrix composite materials. Laminate geometry, material properties, and matrix degradation states are specified as functions of position and time. Matrix shrinkage and property changes are modeled as functions of the degradation states. The model is incorporated into an existing composite mechanics computer code. Stresses, strains, and deformations at the laminate, ply, and micro levels are calculated, and from these calculations it is determined if there is failure of any kind. The rationale for the model (based on published experimental work) is presented, its integration into the laminate analysis code is outlined, and example results are given, with comparisons to existing material and structural data. The mechanisms behind the changes in properties and in surface cracking during long-term aging of polyimide matrix composites are clarified. High-temperature-material test methods are also evaluated.

  6. Fractures in high-strength bolts due to hydrogen induced stress corrosion. Causes and corrective actions

    Hoche, Holger; Oechsner, Matthias

    2017-01-01

    Delayed brittle fractures of high-strength bolts of the strength class 10.9 are presented, taking the example of three damage cases. The respective damage mechanisms could be attributed to hydrogen induced stress corrosion which was caused, in turn, by hydrogen absorption during operation. The examples were chosen with a particular focus on the material condition's susceptibility which explains the cause for the occurrence of the damage mechanism. However, in only one of the three cases the susceptibility was evident and could be explained by violations of normative specifications and an unfavorable material choice. Whereas in the two other examples, only slight or no deviations from the standards and/or regulations could be found. The influencing parameters that caused the damage, those that further promoted the damage, as well as possible corrective actions are discussed taking into account the three exemplary damage cases.

  7. Potential damage to DC superconducting magnets due to the high frequency electromagnetic waves

    Gabriel, G. J.

    1977-01-01

    Experimental data are presented in support of the hypothesis that a dc superconducting magnet coil does not behave strictly as an inductor, but as a complicated electrodynamic device capable of supporting electromagnetic waves. Travel times of nanosecond pulses and evidence of sinusoidal standing waves were observed on a prototype four-layer solenoidal coil at room temperature. Ringing observed during switching transients appears as a sequence of multiple reflected square pulses whose durations are related to the layer lengths. With sinusoidal excitation of the coil, the voltage amplitude between a pair of points on the coil exhibits maxima at those frequencies such that the distance between these points is an odd multiple of half wavelength in free space. Evidence indicates that any disturbance, such as that resulting from switching or sudden fault, initiates multiple reflections between layers, thus raising the possibility for sufficiently high voltages to cause breakdown.

  8. High turnover rates of copepod fecal pellets due to Noctiluca scintillans grazing

    Kiørboe, Thomas

    2003-01-01

    Copepod fecal pellet production and vertical flux, as well as vertical distributions of copepods, fecal pellets and the heterotrophic dinoflagellate Noctiluca scintillans were monitored in an upwelling plume off the coast of Brazil during 5 d in austral spring. Less than half (20 to 45%) of the p......Copepod fecal pellet production and vertical flux, as well as vertical distributions of copepods, fecal pellets and the heterotrophic dinoflagellate Noctiluca scintillans were monitored in an upwelling plume off the coast of Brazil during 5 d in austral spring. Less than half (20 to 45...... for fecal pellets at about 0.6 l cell-1 d-1. A simple encounter model suggests that such high clearance rates are feasible. Since N. scintillans occurs at typical abundances of about 106 cells m-2 in temperate seas during spring, summer and autumn, it may contribute significantly to the recycling of rapidly...

  9. Changes in mechanical properties due to gamma irradiation of high-density polyethylene (HDPE)

    Cota, S.S.; Vasconcelos, V.; Senne Junior, M.; Carvalho, L.L.; Rezende, D.B.; Correa, R.F.

    2007-01-01

    This paper presents an experimental analysis of the effect of dose and dose rate parameters during gamma irradiation of high-density polyethylene (HDPE) samples. Considerations concerning the influence of these parameters on HDPE mechanical strength properties as a result of the predominance of oxidative degradation or of cross-linking are presented. The experimental results show an improvement of HDPE mechanical strength as dose increases, indicating the predominance of cross-linking over oxidative degradation and that lower doses are necessary to obtain a similar change in resistance parameters when radiation is applied at lower dose rates, showing that gamma radiation affects the HDPE in a more efficient way at lower dose rates. (author)

  10. High carbon losses due to recent cropland expansion in the United States

    Spawn, S.; Lark, T.; Gibbs, H.

    2017-12-01

    Land conversion for agriculture in the United States has reached record highs in recent years. From 2008 to 2012 nearly 30,000 square kilometers of previously un-cultivated land were converted to agricultural land use with much of this expansion occurring on grasslands (77%) and shrublands (8%). To understand the effects of this conversion on global C cycling, we created novel, spatially explicit biomass maps for these biomes by combining existing satellite data products with models derived from field measurements. We then estimated changes in existing C stocks by combining our derived data with existing Landsat-scale data on land cover, land conversion, forest biomass and soil organic carbon (C) stocks. We find that conversion results in annual C losses of approximately 25 Tg C from US terrestrial ecosystems. Nationwide, roughly 80% of total emissions result from committed soil organic C losses. While biomass losses from expansion into forests and wetlands are disproportionately high per unit area, the vast majority of C losses occurred in grassland ecosystems, with grassland roots representing close to 70% of total biomass losses across all biomes. C losses are partially offset each year by agricultural abandonment which we estimate could sequester as much as 15 Tg C, annually. Taken together, we find that US agricultural expansion results in net annual emissions of 10 Tg C which is nearly 30% of emissions from existing US croplands. Our estimate is comparable to a recent analogous estimate for conversion of the Brazilian Cerrado and is equivalent to 10% of annual C losses from pantropical deforestation, suggesting that the effects of US cropland expansion could be globally significant.

  11. The Effects of Intradistrict School Mobility and High Student Turnover Rates on Early Reading Achievement

    LeBoeuf, Whitney A.

    2013-01-01

    A number of studies have identified school mobility as one form of school disengagement that is disproportionately harmful for young children enrolled in large urban districts. However, there is substantial variation in these findings, with some studies actually evidencing positive associations between school mobility and academic outcomes (Mehana…

  12. Necrotic enlargement of cone photoreceptor cells and the release of high-mobility group box-1 in retinitis pigmentosa

    Murakami, Y; Ikeda, Y; Nakatake, S; Tachibana, T; Fujiwara, K; Yoshida, N; Notomi, S; Nakao, S; Hisatomi, T; Miller, J W; Vavvas, DG; Sonoda, KH; Ishibashi, T

    2015-01-01

    Retinitis pigmentosa (RP) refers to a group of inherited retinal degenerations resulting form rod and cone photoreceptor cell death. The rod cell death due to deleterious genetic mutations has been shown to occur mainly through apoptosis, whereas the mechanisms and features of the secondary cone cell death have not been fully elucidated. Our previous study showed that the cone cell death in rd10 mice, an animal model of RP, involves necrotic features and is partly mediated by the receptor interacting protein kinase. However, the relevancy of necrotic cone cell death in human RP patients remains unknown. In the present study, we showed that dying cone cells in rd10 mice exhibited cellular enlargement, along with necrotic changes such as cellular swelling and mitochondrial rupture. In human eyes, live imaging of cone cells by adaptive optics scanning laser ophthalmoscopy revealed significantly increased percentages of enlarged cone cells in the RP patients compared with the control subjects. The vitreous of the RP patients contained significantly higher levels of high-mobility group box-1, which is released extracellularly associated with necrotic cell death. These findings suggest that necrotic enlargement of cone cells is involved in the process of cone degeneration, and that necrosis may be a novel target to prevent or delay the loss of cone-mediated central vision in RP. PMID:27551484

  13. Up-regulation of TLR2 and TLR4 in high mobility group Box1-stimulated macrophages in pulpitis patients

    Mahmoudi, Javad; Sabermarouf, Babak; Baradaran, Behzad; Sadat-Hatamnezhad, Leila; Shotorbani, Siamak Sandoghchian

    2017-01-01

    Objective(s): High Mobility Group Box1 (HMGB1) is a nonhistone, DNA-binding protein that serves a crucial role in regulating gene transcription and is involved in a variety of proinflammatory, extracellular activities. The aim of this study was to explore whether HMGB1 stimulation can up-regulate the expression of Toll-like Receptor 2 (TLR2) and Toll-like Receptor 4 (TLR4) on macrophages from pulpitis and to clarify the subsequent events involving Th17 cells and Th17 cell-associated cytokine changes. Materials and Methods: Having prepared dental pulp tissues of pulpitis and healthy controls, macrophage were isolated and cultured. Macrophages were thereafter stimulated by HMGB1 time course. RT-QPCR, flowcytometer, immunofluorescence, Western blotting, and ELISA techniques were used in the present research. Results: Our results showed that the expression of TLR2 and TLR4 on macrophages stimulated with HMGB1 increased in pulpitis compared with controls (macrophages without HMGB1 stimulation) with a statistical significance (Ppulpitis increased, and NF-kB, the downstream target of TLR2 and TLR4, also showed a marked elevation after macrophages’ stimulation by HMGB1. Conclusion: The evidence from the present study suggests that the enhanced TLR2 and TLR4 pathways and Th17 cell polarization may be due to HMGB1 stimulation in pulpitis. PMID:28293399

  14. Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

    Yang Ling; Zhou Xiao-Wei; Ma Xiao-Hua; Lv Ling; Zhang Jin-Cheng; Hao Yue; Cao Yan-Rong

    2017-01-01

    The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor (HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties. (paper)

  15. Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

    Yu Xin-Hai; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Xi Xiao-Wen

    2015-01-01

    The high power microwave (HPM) damage effect on the AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ −0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy (SEM) illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device burn-out and the location beneath the gate near the source side is most susceptible to burn-out, which is in accordance with the simulated results. (paper)

  16. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

    2015-01-01

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

  17. Monitoring and modeling shoreline response due to shoreface nourishment on a high-energy coast

    Barnard, P. L.; Erikson, Li H.; Hansen, J. E.

    2009-01-01

    Shoreface nourishment can be an efficient technique to feed sediment into the littoral zone without the order of magnitude cost increase incurred by directly nourishing the beach. An erosion hot spot at Ocean Beach in San Francisco, California, USA, threatens valuable public infrastructure as well as safe recreational use of the beach. In an effort to reduce the erosion at this location, a new beneficial reuse plan was implemented in May 2005 for the sediment dredged annually from the main shipping channel at the mouth of San Francisco Bay. From 2005 to 2007, approximately 230,000 m of sand was placed annually at depths between 9 and 14 m, in a location where strong tidal currents and open-ocean waves could potentially feed sediment onto the section of beach experiencing critical erosion. The evolution of the disposal mound and adjacent beach were monitored with 12 multibeam bathymetric surveys, and over 40 high-resolution beach topographic surveys. In addition, sediment transport processes were investigated using sediment grab samples, acoustic Doppler profilers, and two separate models: a cross-shore profile model (UNIBEST-TC) and a coastal area model (Delft3D). The results of the monitoring and modeling demonstrate that the disposal mound may be effective in dissipating wave energy striking this vulnerable stretch of coast with negligible shadowing effects, but a positive shoreline response can only be achieved by placing the sediment in water depths less than 5 m. 

  18. Mediating water temperature increases due to livestock and global change in high elevation meadow streams of the Golden Trout Wilderness

    Sebastien Nussle; Kathleen R. Matthews; Stephanie M. Carlson

    2015-01-01

    Rising temperatures due to climate change are pushing the thermal limits of many species, but how climate warming interacts with other anthropogenic disturbances such as land use remains poorly understood. To understand the interactive effects of climate warming and livestock grazing on water temperature in three high elevation meadow streams in the Golden Trout...

  19. Behaviour of tetraalkylammonium ions in high-field asymmetric waveform ion mobility spectrometry.

    Aksenov, Alexander A; Kapron, James T

    2010-05-30

    High-field asymmetric waveform ion mobility spectrometry (FAIMS) is an ion-filtering technique recently adapted for use with liquid chromatography/mass spectrometry (LC/MS) to remove interferences during analysis of complex matrices. This is the first systematic study of a series of singly charged tetraalkylammonium ions by FAIMS-MS. The compensation voltage (CV) is the DC offset of the waveform which permits the ion to emerge from FAIMS and it was determined for each member of the series under various conditions. The electrospray ionization conditions explored included spray voltage, vaporizer temperature, and sheath and auxiliary gas pressure. The FAIMS conditions explored included carrier gas flow rate, electrode temperature and composition of the carrier gas. Optimum desolvation was achieved using sufficient carrier gas (flow rate > or = 2 L/min) to ensure stable response. Low-mass ions (m/z 100-200) are more susceptible to changes in electrode temperature and gas composition than high mass ions (m/z 200-700). As a result of this study, ions are reliably analyzed using standard FAIMS conditions (dispersion voltage -5000 V, carrier gas flow rate 3 L/min, 50% helium/50%nitrogen, inner electrode temperature 70 degrees C and outer electrode temperature 90 degrees C). Variation of FAIMS conditions may be of great use for the separation of very low mass tetraalkylammonium (TAA) ions from other TAA ions. The FAIMS conditions do not appear to have a major effect on higher mass ions. Copyright 2010 John Wiley & Sons, Ltd.

  20. Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

    Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace; Rajan, Siddharth; Volakis, John L.

    2016-01-01

    A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures

  1. Increased serum levels of high mobility group box 1 protein in patients with autistic disorder.

    Emanuele, Enzo; Boso, Marianna; Brondino, Natascia; Pietra, Stefania; Barale, Francesco; Ucelli di Nemi, Stefania; Politi, Pierluigi

    2010-05-30

    High mobility group box 1 (HMGB1) is a highly conserved, ubiquitous protein that functions as an activator for inducing the immune response and can be released from neurons after glutamate excitotoxicity. The objective of the present study was to measure serum levels of HMGB1 in patients with autistic disorder and to study their relationship with clinical characteristics. We enrolled 22 adult patients with autistic disorder (mean age: 28.1+/-7.7 years) and 28 age- and gender-matched healthy controls (mean age: 28.7+/-8.1 years). Serum levels of HMGB1 were measured by enzyme-linked immunosorbent assay (ELISA). Compared with healthy subjects, serum levels of HMGB1 were significantly higher in patients with autistic disorder (10.8+/-2.6 ng/mL versus 5.6+/-2.5 ng/mL, respectively, Pautistic disorder. Increased HMGB1 may be a biological correlate of the impaired reciprocal social interactions in this neurodevelopmental disorder. Copyright 2010 Elsevier Inc. All rights reserved.

  2. Expression and Effects of High-Mobility Group Box 1 in Cervical Cancer

    Xiaoao Pang

    2014-05-01

    Full Text Available We investigated the significance of high- mobility group box1 (HMGB1 and T-cell-mediated immunity and prognostic value in cervical cancer. HMGB1, forkhead/winged helix transcription factor p3 (Foxp3, IL-2, and IL-10 protein expression was analyzed in 100 cervical tissue samples including cervical cancer, cervical intraepithelial neoplasia (CIN, and healthy control samples using immunohistochemistry. Serum squamous cell carcinoma antigen (SCC-Ag was immunoradiometrically measured in 32 serum samples from 37 cases of squamous cervical cancer. HMGB1 and SCC-Ag were then correlated to clinicopathological characteristics. HMGB1 expression tends to increase as cervical cancer progresses and it was found to be significantly correlated to FIGO stage and lymph node metastasis. These findings suggest that HMGB1 may be a useful prognostic indicator of cervical carcinoma. In addition, there were significant positive relationships between HMGB1 and FOXP3 or IL-10 expression (both p < 0.05. In contrast, HMGB1 and IL-2 expression was negatively correlated (p < 0.05. HMGB1 expression may activate Tregs or facilitate Th2 polarization to promote immune evasion of cervical cancer. Elevated HMGB1 protein in cervical carcinoma samples was associated with a high recurrence of HPV infection in univariate analysis (p < 0.05. HMGB1 expression and levels of SCC-Ag were directly correlated in SCC (p < 0.05. Thus, HMGB1 may be a useful biomarker for patient prognosis and cervical cancer prediction and treatment.

  3. High strength-of-ties and low mobility enable the evolution of third-party punishment

    Roos, Patrick; Gelfand, Michele; Nau, Dana; Carr, Ryan

    2014-01-01

    As punishment can be essential to cooperation and norm maintenance but costly to the punisher, many evolutionary game-theoretic studies have explored how direct punishment can evolve in populations. Compared to direct punishment, in which an agent acts to punish another for an interaction in which both parties were involved, the evolution of third-party punishment (3PP) is even more puzzling, because the punishing agent itself was not involved in the original interaction. Despite significant empirical studies of 3PP, little is known about the conditions under which it can evolve. We find that punishment reputation is not, by itself, sufficient for the evolution of 3PP. Drawing on research streams in sociology and psychology, we implement a structured population model and show that high strength-of-ties and low mobility are critical for the evolution of responsible 3PP. Only in such settings of high social-structural constraint are punishers able to induce self-interested agents toward cooperation, making responsible 3PP ultimately beneficial to individuals as well as the collective. Our results illuminate the conditions under which 3PP is evolutionarily adaptive in populations. Responsible 3PP can evolve and induce cooperation in cases where other mechanisms alone fail to do so. PMID:24335985

  4. Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

    Freeman, Jon C.

    2003-01-01

    Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

  5. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor

    Jiang, Chunyan; Liu, Ting; Du, Chunhua; Huang, Xin; Liu, Mengmeng; Zhao, Zhenfu; Li, Linxuan; Pu, Xiong; Zhai, Junyi; Hu, Weiguo; Wang, Zhong Lin

    2017-11-01

    The piezotronic effect utilizes strain-induced piezoelectric polarization charges to tune the carrier transportation across the interface/junction. We fabricated a high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the transport property was proven to be enhanced by applying an external stress for the first time. The enhanced source-drain current was also observed at any gate voltage and the maximum enhancement of the saturation current was up to 21% with 15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical mechanism of HEMT with/without external compressive stress conditions was carefully illustrated and further confirmed by a self-consistent solution of the Schrödinger-Poisson equations. This study proves the cause-and-effect relationship between the piezoelectric polarization effect and 2D electron gas formation, which provides a tunable solution to enhance the device performance. The strain tuned HEMT has potential applications in human-machine interface and the security control of the power system.

  6. Monte Carlo simulation of ballistic transport in high-mobility channels

    Sabatini, G; Marinchio, H; Palermo, C; Varani, L; Daoud, T; Teissier, R [Institut d' Electronique du Sud (CNRS UMR 5214) - Universite Montpellier II (France); Rodilla, H; Gonzalez, T; Mateos, J, E-mail: sabatini@ies.univ-montp2.f [Departamento de Fisica Aplicada - Universidad de Salamanca (Spain)

    2009-11-15

    By means of Monte Carlo simulations coupled with a two-dimensional Poisson solver, we evaluate directly the possibility to use high mobility materials in ultra fast devices exploiting ballistic transport. To this purpose, we have calculated specific physical quantities such as the transit time, the transit velocity, the free flight time and the mean free path as functions of applied voltage in InAs channels with different lengths, from 2000 nm down to 50 nm. In this way the transition from diffusive to ballistic transport is carefully described. We remark a high value of the mean transit velocity with a maximum of 14x10{sup 5} m/s for a 50 nm-long channel and a transit time shorter than 0.1 ps, corresponding to a cutoff frequency in the terahertz domain. The percentage of ballistic electrons and the number of scatterings as functions of distance are also reported, showing the strong influence of quasi-ballistic transport in the shorter channels.

  7. Monte Carlo simulation of ballistic transport in high-mobility channels

    Sabatini, G; Marinchio, H; Palermo, C; Varani, L; Daoud, T; Teissier, R; Rodilla, H; Gonzalez, T; Mateos, J

    2009-01-01

    By means of Monte Carlo simulations coupled with a two-dimensional Poisson solver, we evaluate directly the possibility to use high mobility materials in ultra fast devices exploiting ballistic transport. To this purpose, we have calculated specific physical quantities such as the transit time, the transit velocity, the free flight time and the mean free path as functions of applied voltage in InAs channels with different lengths, from 2000 nm down to 50 nm. In this way the transition from diffusive to ballistic transport is carefully described. We remark a high value of the mean transit velocity with a maximum of 14x10 5 m/s for a 50 nm-long channel and a transit time shorter than 0.1 ps, corresponding to a cutoff frequency in the terahertz domain. The percentage of ballistic electrons and the number of scatterings as functions of distance are also reported, showing the strong influence of quasi-ballistic transport in the shorter channels.

  8. Oxidative Stress at High Temperatures in Lactococcus lactis Due to an Insufficient Supply of Riboflavin

    Chen, Jun; Shen, Jing

    2013-01-01

    Lactococcus lactis MG1363 was found to be unable to grow at temperatures above 37°C in a defined medium without riboflavin, and the cause was identified to be dissolved oxygen introduced during preparation of the medium. At 30°C, growth was unaffected by dissolved oxygen and oxygen was consumed quickly. Raising the temperature to 37°C resulted in severe growth inhibition and only slow removal of dissolved oxygen. Under these conditions, an abnormally low intracellular ratio of [ATP] to [ADP] (1.4) was found (normally around 5), which indicates that the cells are energy limited. By adding riboflavin to the medium, it was possible to improve growth and oxygen consumption at 37°C, and this also normalized the [ATP]-to-[ADP] ratio. A codon-optimized redox-sensitive green fluorescent protein (GFP) was introduced into L. lactis and revealed a more oxidized cytoplasm at 37°C than at 30°C. These results indicate that L. lactis suffers from heat-induced oxidative stress at increased temperatures. A decrease in intracellular flavin adenine dinucleotide (FAD), which is derived from riboflavin, was observed with increasing growth temperature, but the presence of riboflavin made the decrease smaller. The drop was accompanied by a decrease in NADH oxidase and pyruvate dehydrogenase activities, both of which depend on FAD as a cofactor. By overexpressing the riboflavin transporter, it was possible to improve FAD biosynthesis, which resulted in increased NADH oxidase and pyruvate dehydrogenase activities and improved fitness at high temperatures in the presence of oxygen. PMID:23913422

  9. The Impact of Low, Moderate, and High Military Family Mobility School District Transfer Rates on Graduating Senior High School Dependents' Achievement and School Engagement

    Rippe, Jeffrey K.

    2012-01-01

    The results of this study suggest that there were no significant differences in the academic performance of military dependents' with low (n = 20), moderate (n = 20), and high (n = 20) mobility school district transfer rates compared to non-military control students (n = 20) before completing high school. The findings were not consistent with…

  10. Limited mobility of dioxins near San Jacinto super fund site (waste pit) in the Houston Ship Channel, Texas due to strong sediment sorption.

    Louchouarn, Patrick; Seward, Shaya M; Cornelissen, Gerard; Arp, Hans Peter H; Yeager, Kevin M; Brinkmeyer, Robin; Santschi, Peter H

    2018-02-20

    Sediments from a waste pit in Houston Ship Channel (HSC) were characterized using a number of molecular markers of natural organic matter fractions (e.g., pyrogenic carbon residues, PAHs, lignins), in addition to dioxins, in order to test the hypothesis that the dispersal and mobility of dioxins from the waste pit in the San Jacinto River is minimal. Station SG-6, sampled at the site of the submerged waste pit, had the highest dioxin/furan concentrations reported for the Houston Ship Channel/Galveston Bay (HSC/GB) system (10,000-46,000 pg/g), which translated into some of the highest reported World Health Organization Toxic Equivalents (TEQs: 2000-11,000 pg/g) in HSC sediments. Using a multi-tracer approach, this study confirmed our hypothesis that sludges from chlorinated pulps are a very likely source of dioxins/furans to this pit. However, this material also contained large quantities of additional hydrophobic organic contaminants (PAHs) and pyrogenic markers (soot-BC, levoglucosan), pointing to the co-occurrence of petroleum hydrocarbons and combustion byproducts. Comparison of dioxin/furan signatures in the waste pit with those from sediments of the HSC and a control site suggests that the remobilization of contaminated particles did not occur beyond the close vicinity of the pit itself. The dioxins/furans in sediments outside the waste pit within the HSC are rather from other diffuse inputs, entering the sedimentary environment through the air and water, and which are comprised of a mixture of industrial and municipal sources. Fingerprinting of waste pit dioxins indicates that their composition is typical of pulp and paper sources. Measured pore water concentrations were 1 order of magnitude lower than estimated values, calculated from a multiphase sorption model, indicating low mobility of dioxins within the waste pit. This is likely accomplished by co-occurring and strong sorbing pyrogenic and petrogenic residues in the waste pit, which tend to keep

  11. Shoes, Dues, and Other Barriers to College Attainment: Perspectives of Students Attending High-Poverty Urban High Schools

    Drotos, Stephanie M.; Cilesiz, Sebnem

    2016-01-01

    Facilitating economically disadvantaged students' access to higher education is an important goal of educational policy. However, some practices toward this goal are based on theories and assumptions not informed by the students' conditions or needs. The purpose of this study was to understand the challenges faced by students from high poverty,…

  12. Adaptation of Xanthobacter autotrophicus GJ10 to bromoacetate due to activation and mobilization of the haloacetate dehalogenase gene by insertion element IS1247

    van der Ploeg, J; Willemsen, M; Van Hall, Gerrit

    1995-01-01

    B gene. In mutant GJ10M50, a DNA fragment (designated IS1247) had copied itself from a position on the chromosome that was not linked to the dhlB region to a site immediately upstream of dhlB, resulting in a 1,672-bp insertion. IS1247 was found to encode an open reading frame corresponding to 464 amino...... acids which showed similarity to putative transposases from two other insertion elements. In most of the other MBA-resistant mutants of GJ10, IS1247 was also present in one more copy than in the wild type, which had two copies located within 20 kb. After insertion to a site proximal to dhlB, IS1247...... was able to transpose itself together with the dhlB gene to a plasmid, without the requirement of a second insertion element being present downstream of dhlB. The results show that IS1247 causes bromoacetate resistance by overexpression and mobilization of the haloacid dehalogenase gene, which mimics steps...

  13. Assessment of the risk of failure of high voltage substations due to environmental conditions and pollution on insulators.

    Castillo Sierra, Rafael; Oviedo-Trespalacios, Oscar; Candelo, John E; Soto, Jose D

    2015-07-01

    Pollution on electrical insulators is one of the greatest causes of failure of substations subjected to high levels of salinity and environmental pollution. Considering leakage current as the main indicator of pollution on insulators, this paper focuses on establishing the effect of the environmental conditions on the risk of failure due to pollution on insulators and determining the significant change in the magnitude of the pollution on the insulators during dry and humid periods. Hierarchical segmentation analysis was used to establish the effect of environmental conditions on the risk of failure due to pollution on insulators. The Kruskal-Wallis test was utilized to determine the significant changes in the magnitude of the pollution due to climate periods. An important result was the discovery that leakage current was more common on insulators during dry periods than humid ones. There was also a higher risk of failure due to pollution during dry periods. During the humid period, various temperatures and wind directions produced a small change in the risk of failure. As a technical result, operators of electrical substations can now identify the cause of an increase in risk of failure due to pollution in the area. The research provides a contribution towards the behaviour of the leakage current under conditions similar to those of the Colombian Caribbean coast and how they affect the risk of failure of the substation due to pollution.

  14. Mobile Learning Based Worked Example in Electric Circuit (WEIEC) Application to Improve the High School Students' Electric Circuits Interpretation Ability

    Yadiannur, Mitra; Supahar

    2017-01-01

    This research aims to determine the feasibility and effectivity of mobile learning based Worked Example in Electric Circuits (WEIEC) application in improving the high school students' electric circuits interpretation ability on Direct Current Circuits materials. The research method used was a combination of Four-D Models and ADDIE model. The…

  15. High mobility group box1 (HMGB1) in relation to cutaneous inflammation in systemic lupus erythematosus (SLE)

    Abdulahad, D.A.; Westra, J.; Reefman, E.; Zuidersma, E.; Bijzet, J.; Limburg, P.C.; Kallenberg, C.G.M.; Bijl, M.

    2013-01-01

    Photosensitivity is characteristic of systemic lupus erythematosus (SLE). Upon ultraviolet B (UVB) exposure, patients develop inflammatory skin lesions in the vicinity of sunburn cells (SBCs). High mobility group box 1 (HMGB1) is released from apoptotic and activated cells and exerts inflammatory

  16. Enhanced mobility of poly(3-hexylthiophene) transistors by spin-coating from high-boiling-point solvents

    Chang, J.F.; Sun, B.Q.; Breiby, Dag Werner

    2004-01-01

    chloroform are typically on the order of 0.01 cm(2)/(V s). Here we investigate a range of solvents with higher boiling points. We find that 1,2,4-trichlorobenzene with good solubility and a high boiling point significantly improves the field-effect mobilities up to 0.12 cm(2)/(V s) with on:off ratios of 10...

  17. Sequence-specific high mobility group box factors recognize 10-12-base pair minor groove motifs

    van Beest, M; Dooijes, D; van De Wetering, M

    2000-01-01

    Sequence-specific high mobility group (HMG) box factors bind and bend DNA via interactions in the minor groove. Three-dimensional NMR analyses have provided the structural basis for this interaction. The cognate HMG domain DNA motif is generally believed to span 6-8 bases. However, alignment...

  18. Characterising thermal resistances and capacitances of GaN high-electron-mobility transistors through dynamic electrothermal measurements

    Wei, Wei; Mikkelsen, Jan H.; Jensen, Ole Kiel

    2014-01-01

    This study presents a method to characterise thermal resistances and capacitances of GaN high-electron-mobility transistors (HEMTs) through dynamic electrothermal measurements. A measured relation between RF gain and the channel temperature (Tc) is formed and used for indirect measurements...

  19. AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

    Xinke Liu

    2017-09-01

    Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

  20. Thermal instability and the growth of the InGaAs/AlGaAs pseudomorphic high electron mobility transistor system

    Pellegrino, Joseph G.; Qadri, Syed B.; Mahadik, Nadeemullah A.; Rao, Mulpuri V.; Tseng, Wen F.; Thurber, Robert; Gajewski, Donald; Guyer, Jonathan

    2007-01-01

    The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%-3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77 K

  1. Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors

    Kadashchuk, Andrey; Tong, Fei; Janneck, Robby; Fishchuk, Ivan I.; Mityashin, Alexander; Pavlica, Egon; Köhler, Anna; Heremans, Paul; Rolin, Cedric; Bratina, Gvido; Genoe, Jan

    2017-09-01

    We demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors.

  2. Two-frequency method for measuring Hall emf in high-resistive materials with charge-carrier low mobility

    Aleksandrov, A.L.; Vedeneev, A.S.; Gulyaev, I.B.; Zhdan, A.G.

    1982-01-01

    A facility for measuring Hall emf in high-resistive materials with low mobility of charge carriers by the two-frequency method using digital synchronous integration is described. The facility permits to detect the minimum Hall emf approxamatety equat to 5 μV at approximatety equal to 1 T Ohm of the investigated.sample resistance during the measuring time of approximately equal to 2000 s. Sensitivity by Hall mobility makes up >= 0.01 cm 2 /Vxs at the same measuring time. Measuring results of the Hall emf on GaAs monocrystals, CdSe films and island film of gold are presented

  3. Development of practical field minimised personal hands free headset for mobile phones with high performance robustness

    Gosnell, M.E.; Huber, G.

    2001-01-01

    This paper presents the development of a practical means of minimising exposure of the user's head to radiated emissions from mobile phones. The invention allows the production of a commercially viable product similar to the existing and widely accepted hands free headsets. The description of the design evolution concentrates on various techniques for attenuating the power emissions at the earpiece and the corresponding results will be disclosed including measurements taken with the mobile held in several typical positions. The design focuses on maximising immunity to phone and wire position with maximum attenuation in the commercial mobile bands. Copyright (2001) Australasian Radiation Protection Society Inc

  4. Basic design and construction of a mobile hot cell for the conditioning of spent high activity radioactive sources

    An Hongxiang; Fan Zhiwen; Al-Mughrabi, M.

    2011-01-01

    The conditioning of spent high activity radioactive sources is one important step in sealed radioactive sources management strategies. Based on the practice on the designing of the immobilized hot cell, the handling of the sealed radioactive sources, and the reference of the mobile hot cell constructed in South Africa, SHARS conditioning process and the basic design of a mobile hot cell is developed. The mobile hot cell has been constructed and the tests including the cold test of the SRS conditioning, the hot cell assemble and disassemble and SRS recovery were done. The shielding capacity were tested by 3.8 x 10 13 Bq cobalt-60 sources and the dose rate of the equipment surface, below 2 m, is less than 0.016 mSv/h. It is proved that the designing requirement is meet and the function of the equipment is good. (authors)

  5. High mobility organic field-effect transistor based on water-soluble deoxyribonucleic acid via spray coating

    Shi, Wei; Han, Shijiao; Huang, Wei; Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2015-01-26

    High mobility organic field-effect transistors (OFETs) by inserting water-soluble deoxyribonucleic acid (DNA) buffer layer between electrodes and pentacene film through spray coating process were fabricated. Compared with the OFETs incorporated with DNA in the conventional organic solvents of ethanol and methanol: water mixture, the water-soluble DNA based OFET exhibited an over four folds enhancement of field-effect mobility from 0.035 to 0.153 cm{sup 2}/Vs. By characterizing the surface morphology and the crystalline structure of pentacene active layer through atomic force microscope and X-ray diffraction, it was found that the adoption of water solvent in DNA solution, which played a key role in enhancing the field-effect mobility, was ascribed to both the elimination of the irreversible organic solvent-induced bulk-like phase transition of pentacene film and the diminution of a majority of charge trapping at interfaces in OFETs.

  6. Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

    Lim, Jong-Won, E-mail: jwlim@etri.re.kr [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Park, Hyung-Moo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Division of Electronics and Electrical Engineering, Dongguk University, Seoul (Korea, Republic of)

    2013-11-29

    We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f{sub T}) of 18 GHz, and a maximum oscillation frequency (f{sub max}) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz.

  7. Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

    Lim, Jong-Won; Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo; Park, Hyung-Moo

    2013-01-01

    We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f T ) of 18 GHz, and a maximum oscillation frequency (f max ) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz

  8. Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high-electron-mobility transistor

    Quan Si; Hao Yue; Ma Xiao-Hua; Yu Hui-You

    2011-01-01

    AlGaN/GaN depletion-mode high-electron-mobility transistor (D-HEMT) and fluorine (F) plasma treated enhancement-mode high-electron-mobility transistor (E-HEMT) are exposed to 60 Co gamma radiation with a dose of 1.6 Mrad (Si). No degradation is observed in the performance of D-HEMT. However, the maximum transconductance of E-HEMT is increased after radiation. The 2DEG density and the mobility are calculated from the results of capacitance-voltage measurement. The electron mobility decreases after fluorine plasma treatment and recovers after radiation. Conductance measurements in a frequency range from 10 kHz to 1 MHz are used to characterize the trapping effects in the devices. A new type of trap is observed in the F plasma treated E-HEMT compared with the D-HEMT, but the density of the trap decreases by radiation. Fitting of G p /ω data yields the trap densities D T = (1 − 3) × 10 12 cm −2 · eV −1 and D T = (0.2 − 0.8) × 10 12 cm −2 · eV −1 before and after radiation, respectively. The time constant is 0.5 ms-6 ms. With F plasma treatment, the trap is introduced by etch damage and degrades the electronic mobility. After 60 Co gamma radiation, the etch damage decreases and the electron mobility is improved. The gamma radiation can recover the etch damage caused by F plasma treatment. (interdisciplinary physics and related areas of science and technology)

  9. Magnetotransport of High Mobility Holes in Monolayer and Bilayer WSe2

    Tutuc, Emanuel

    Transition metal dichalcogenides have attracted significant interest because of their two-dimensional crystal structure, large band-gap, and strong spin-orbit interaction which leads to spin-valley locking. Recent advances in sample fabrication have allowed the experimental study of low temperature magneto-transport of high mobility holes in WSe2. We review here the main results of these studies which reveal clear quantum Hall states in mono- and bilayer WSe2. The data allows the extraction of an effective hole mass of m* = 0.45me (me is the bare electron mass) in both mono and bilayer WSe2. A systematic study of the carrier distribution in bilayer WSe2 determined from a Fourier analysis of the Shubnikov-de Haas oscillations indicates that the two layers are weakly coupled. The individual layer density dependence on gate bias shows negative compressibility, a signature of strong electron-electron interaction in these materials associated with the large effective mass. We discuss the interplay between cyclotron and Zeeman splitting using the dependence of the quantum Hall state sequence on carrier density, and the angle between the magnetic field and the WSe2 plane. Work done in collaboration with B. Fallahazad, H. C. P. Movva, K. Kim, S. K. Banerjee, T. Taniguchi, and K. Watanabe. This work supported by the Nanoelectronics Research Initiative SWAN center, Intel Corp., and National Science Foundation.

  10. Anti-high mobility group box-1 antibody therapy for traumatic brain injury.

    Okuma, Yu; Liu, Keyue; Wake, Hidenori; Zhang, Jiyong; Maruo, Tomoko; Date, Isao; Yoshino, Tadashi; Ohtsuka, Aiji; Otani, Naoki; Tomura, Satoshi; Shima, Katsuji; Yamamoto, Yasuhiko; Yamamoto, Hiroshi; Takahashi, Hideo K; Mori, Shuji; Nishibori, Masahiro

    2012-09-01

    High mobility group box-1 (HMGB1) plays an important role in triggering inflammatory responses in many types of diseases. In this study, we examined the involvement of HMGB1 in traumatic brain injury (TBI) and evaluated the ability of intravenously administered neutralizing anti-HMGB1 monoclonal antibody (mAb) to attenuate brain injury. Traumatic brain injury was induced in rats or mice by fluid percussion. Anti-HMGB1 mAb or control mAb was administered intravenously after TBI. Anti-HMGB1 mAb remarkably inhibited fluid percussion-induced brain edema in rats, as detected by T2-weighted magnetic resonance imaging; this was associated with inhibition of HMGB1 translocation, protection of blood-brain barrier (BBB) integrity, suppression of inflammatory molecule expression, and improvement of motor function. In contrast, intravenous injection of recombinant HMGB1 dose-dependently produced the opposite effects. Experiments using receptor for advanced glycation end product (RAGE)(-/-) , toll-like receptor-4 (TLR4)(-/-) , and TLR2(-/-) mice suggested the involvement of RAGE as the predominant receptor for HMGB1. Anti-HMGB1 mAb may provide a novel and effective therapy for TBI by protecting against BBB disruption and reducing the inflammatory responses induced by HMGB1. Copyright © 2012 American Neurological Association.

  11. Isomer Information from Ion Mobility Separation of High-Mannose Glycan Fragments.

    Harvey, David J; Seabright, Gemma E; Vasiljevic, Snezana; Crispin, Max; Struwe, Weston B

    2018-05-01

    Extracted arrival time distributions of negative ion CID-derived fragments produced prior to traveling-wave ion mobility separation were evaluated for their ability to provide structural information on N-linked glycans. Fragmentation of high-mannose glycans released from several glycoproteins, including those from viral sources, provided over 50 fragments, many of which gave unique collisional cross-sections and provided additional information used to assign structural isomers. For example, cross-ring fragments arising from cleavage of the reducing terminal GlcNAc residue on Man 8 GlcNAc 2 isomers have unique collision cross-sections enabling isomers to be differentiated in mixtures. Specific fragment collision cross-sections enabled identification of glycans, the antennae of which terminated in the antigenic α-galactose residue, and ions defining the composition of the 6-antenna of several of the glycans were also found to have different cross-sections from isomeric ions produced in the same spectra. Potential mechanisms for the formation of the various ions are discussed and the estimated collisional cross-sections are tabulated. Graphical Abstract ᅟ.

  12. Strontium isotope evidence for a highly mobile population on the Pamir Plateau 2500 years ago

    Wang, Xueye; Tang, Zihua; Wu, Jing; Wu, Xinhua; Wu, Yiqun; Zhou, Xinying

    2016-10-01

    Archeological researches have proposed arguments for human mobility and long-distance trading over the Eurasia before the Silk Roads. Here we utilize biologically available strontium isotope analysis to assess the extent of pre-Silk Road population movements and cultural communications across the Asian interior. From an early Iron Age cemetery (ca. 2500 yr B.P.) on the eastern Pamir Plateau, mean 87Sr/86Sr ratios from 34 individuals display considerable isotopic variability, and 10 individuals are distinguished as migrants based on the local strontium isotope range of 0.710296-0.710572 defined by 12 ovicaprine bones. Comparison of the proportion (10/34) with the regional census data completed in 1909 A.D. (3% non-locals) suggests a highly migratory behavior on the plateau 2500 years ago. Furthermore, exotic mortuary objects, such as silk fabrics from eastern China and angular harp originated from the Near East, clearly demonstrate an interaction between different cultures on the plateau before the establishment of the Silk Road.

  13. Expression and mechanism of high mobility group box protein-1 in retinal tissue of diabetic rats

    Shuang Jiang

    2016-05-01

    Full Text Available AIM:To investigate the expression and mechanism of high mobility group box protein-1(HMGB1in the retina of diabetic rats. METHODS:Sixty SD rats were randomly divided into diabetic group and control group. Diabetic rat model was produced by intraperitioneal injection of 1% STZ with 60mg/Kg weight. The rats in control group received intraperitioneal injection of normal saline with same dosage. After injection, the rats were sacrificed and eyeballs were enucleated for HE staining, the retina fluorescence angiography, TUNEL and Western Blot detection at 1, 2 and 4mo for the expressions of HMGB1 and NF-κB. RESULTS:Compared with the control group, the retinal cells disorder, cell densities decreases, microvasculars occlusion were founded with inner and outer nuclear layer thinning and ganglion cell apoptosis. The fluorescence angiography showed that peripheral capillaries became circuitous and vascular occlusion and non-perfusion area could be seen. The expressions of HMGB1 and NF-κB were higher than those of control with time dependence and they had significant positive correlations(PCONCLUSION:The expression of HMGB1 increases in diabetic rat retina, which may involve in the occurrence of diabetic retinopathy through the NF- κB pathway.

  14. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Reza, Shahed; Chumbes, Eduardo M. [Raytheon Integrated Defense Systems, Andover, Massachusetts 01810 (United States); Khurgin, Jacob [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2015-10-12

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

  15. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    Bajaj, Sanyam; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang; Reza, Shahed; Chumbes, Eduardo M.; Khurgin, Jacob; Rajan, Siddharth

    2015-01-01

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10 7  cm/s at a low sheet charge density of 7.8 × 10 11  cm −2 . An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs

  16. High Mobility Group B Proteins, Their Partners, and Other Redox Sensors in Ovarian and Prostate Cancer

    Aida Barreiro-Alonso

    2016-01-01

    Full Text Available Cancer cells try to avoid the overproduction of reactive oxygen species by metabolic rearrangements. These cells also develop specific strategies to increase ROS resistance and to express the enzymatic activities necessary for ROS detoxification. Oxidative stress produces DNA damage and also induces responses, which could help the cell to restore the initial equilibrium. But if this is not possible, oxidative stress finally activates signals that will lead to cell death. High mobility group B (HMGB proteins have been previously related to the onset and progressions of cancers of different origins. The protein HMGB1 behaves as a redox sensor and its structural changes, which are conditioned by the oxidative environment, are associated with different functions of the protein. This review describes recent advances in the role of human HMGB proteins and other proteins interacting with them, in cancerous processes related to oxidative stress, with special reference to ovarian and prostate cancer. Their participation in the molecular mechanisms of resistance to cisplatin, a drug commonly used in chemotherapy, is also revised.

  17. Foraging segregation and genetic divergence between geographically proximate colonies of a highly mobile seabird

    Wiley, Anne E.; Welch, Andreanna J.; Ostrom, P.H.; James, Helen F.; Stricker, C.A.; Fleischer, R.C.; Gandhi, H.; Adams, J.; Ainley, D.G.; Duvall, F.; Holmes, N.; Hu, D.; Judge, S.; Penniman, J.; Swindle, K.A.

    2012-01-01

    Foraging segregation may play an important role in the maintenance of animal diversity, and is a proposed mechanism for promoting genetic divergence within seabird species. However, little information exists regarding its presence among seabird populations. We investigated genetic and foraging divergence between two colonies of endangered Hawaiian petrels (Pterodroma sandwichensis) nesting on the islands of Hawaii and Kauai using the mitochondrial Cytochrome b gene and carbon, nitrogen and hydrogen isotope values (?? 13C, ?? 15N and ??D, respectively) of feathers. Genetic analyses revealed strong differentiation between colonies on Hawaii and Kauai, with ?? ST = 0. 50 (p Feather ??D varied from -69 to 53???. This variation cannot be related solely to an isotopically homogeneous ocean water source or evaporative water loss. Instead, we propose the involvement of salt gland excretion. Our data demonstrate the presence of foraging segregation between proximately nesting seabird populations, despite high species mobility. This ecological diversity may facilitate population coexistence, and its preservation should be a focus of conservation strategies. ?? 2011 Springer-Verlag (outside the USA).

  18. Evolution of high mobility group nucleosome-binding proteins and its implications for vertebrate chromatin specialization.

    González-Romero, Rodrigo; Eirín-López, José M; Ausió, Juan

    2015-01-01

    High mobility group (HMG)-N proteins are a family of small nonhistone proteins that bind to nucleosomes (N). Despite the amount of information available on their structure and function, there is an almost complete lack of information on the molecular evolutionary mechanisms leading to their exclusive differentiation. In the present work, we provide evidence suggesting that HMGN lineages constitute independent monophyletic groups derived from a common ancestor prior to the diversification of vertebrates. Based on observations of the functional diversification across vertebrate HMGN proteins and on the extensive silent nucleotide divergence, our results suggest that the long-term evolution of HMGNs occurs under strong purifying selection, resulting from the lineage-specific functional constraints of their different protein domains. Selection analyses on independent lineages suggest that their functional specialization was mediated by bursts of adaptive selection at specific evolutionary times, in a small subset of codons with functional relevance-most notably in HMGN1, and in the rapidly evolving HMGN5. This work provides useful information to our understanding of the specialization imparted on chromatin metabolism by HMGNs, especially on the evolutionary mechanisms underlying their functional differentiation in vertebrates. © The Author 2014. Published by Oxford University Press on behalf of the Society for Molecular Biology and Evolution. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  19. An effective quality model for evaluating mobile websites

    Hassan, W.U.; Nawaz, M.T.; Syed, T.H.; Naseem, A.

    2015-01-01

    The Evolution in Web development in recent years has caused emergence of new area of mobile computing, Mobile phone has been transformed into high speed processing device capable of doing the processes which were suppose to be run only on computer previously, Modem mobile phones now have capability to process data with greater speed then desktop systems and with the inclusion of 3G and 4G networks, mobile became the prime choice for users to send and receive data from any device. As a result, there is a major increase in mobile website need and development but due to uniqueness of mobile website usage as compared to desktop website, there is a need to focus on quality aspect of mobile website, So, to increase and preserve quality of mobile website, a quality model is required which has to be designed specifically to evaluate mobile website quality, To design a mobile website quality model, a survey based methodology is used to gather the information regarding website unique usage in mobile from different users. On the basis of this information, a mobile website quality model is presented which aims to evaluate the quality of mobile websites. In proposed model, some sub characteristics are designed to evaluate mobile websites in particular. The result is a proposed model aims to evaluate features of website which are important in context of its deployment and its usability in mobile platform. (author)

  20. Derived Requirements for Double Shell Tank (DST) High Level Waste (HLW) Auxiliary Solids Mobilization

    TEDESCHI, A.R.

    2000-02-28

    The potential need for auxiliary double-shell tank waste mixing and solids mobilization requires an evaluation of optional technologies. This document formalizes those operating and design requirements needed for further engineering evaluations.

  1. Derived Requirements for Double-Shell Tank (DST) High Level Waste (HLW) Auxiliary Solids Mobilization

    TEDESCHI, A.R.

    2000-01-01

    The potential need for auxiliary double-shell tank waste mixing and solids mobilization requires an evaluation of optional technologies. This document formalizes those operating and design requirements needed for further engineering evaluations

  2. FACTORS INFLUENCING MOBILE-LEARNING ADOPTION INTENTION: AN EMPIRICAL INVESTIGATION IN HIGH EDUCATION

    Ngo Tan Vu Khanh; Gwangyong Gim

    2014-01-01

    This study investigates the use of mobile phones and tablets for learning purposes among university students in Vietnam. For this purpose, the research is based on relevant technology acceptance literature and the Technology Acceptance Model (TAM) is proposed to analyze the adoption of mobile devices and smart phones by Vietnam students for accessing course materials, searching the web for information related to their discipline, sharing knowledge, conducting assignments etc. Employing struct...

  3. SAME4HPC: A Promising Approach in Building a Scalable and Mobile Environment for High-Performance Computing

    Karthik, Rajasekar [ORNL

    2014-01-01

    In this paper, an architecture for building Scalable And Mobile Environment For High-Performance Computing with spatial capabilities called SAME4HPC is described using cutting-edge technologies and standards such as Node.js, HTML5, ECMAScript 6, and PostgreSQL 9.4. Mobile devices are increasingly becoming powerful enough to run high-performance apps. At the same time, there exist a significant number of low-end and older devices that rely heavily on the server or the cloud infrastructure to do the heavy lifting. Our architecture aims to support both of these types of devices to provide high-performance and rich user experience. A cloud infrastructure consisting of OpenStack with Ubuntu, GeoServer, and high-performance JavaScript frameworks are some of the key open-source and industry standard practices that has been adopted in this architecture.

  4. Relaxation effects in ionic mobility and cluster formation: negative ions in SF6 at high pressures

    Juarez, A M; De Urquijo, J; Hinojosa, G; Hernandez-Avila, J L; Basurto, E

    2010-01-01

    The relaxation effects of the ionic mobility and the formation of negative-ion clusters in SF 6 are studied in this work. For this purpose, we have measured the mobility of negative ions in SF 6 over the pressure range 100-800 Torr at a fixed value of density-normalized electric field, E/N, of 20 Td (1 Townsend = 10 -17 V cm 2 ). The data obtained show a clear dependence of the negative-ion drift velocity on drift distance. It is observed that the drift velocity (mobility) reaches a steady-state value only for drift distances above 2 cm, over the studied pressure range. In addition to this, we have observed that the ionic mobility depends strongly on the gas pressure. An explanation of this dependence of the ionic mobility on gas pressure is given in terms of a negative-ion clustering formation process. It was found that the assumption of a linear dependence of the cluster ion mass on pressure provides a satisfactory explanation for the observed mobilities.

  5. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup −14} to 10{sup −8} M and a detection limit below 10{sup −14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  6. AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

    Wang Chong; He Yun-Long; Zheng Xue-Feng; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2013-01-01

    AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current—gain cutoff frequency (f T ) of 10 GHz and a power gain cutoff frequency (f max ) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C—V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C—V dual sweep

  7. Thermally Dried Ink-Jet Process for 6,13-Bis(triisopropylsilylethynyl)-Pentacene for High Mobility and High Uniformity on a Large Area Substrate

    Ryu, Gi Seong; Lee, Myung Won; Jeong, Seung Hyeon; Song, Chung Kun

    2012-05-01

    In this study we developed a simple ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene), which is known as a high-mobility soluble organic semiconductor, to achieve relatively high-mobility and high-uniformity performance for large-area applications. We analyzed the behavior of fluorescent particles in droplets and applied the results to determining a method of controlling the behavior of TIPS-pentacene molecules. The grain morphology of TIPS-pentacene varied depending on the temperature applied to the droplets during drying. We were able to obtain large and uniform grains at 46 °C without any “coffee stain”. The process was applied to a large-size organic thin-film transistor (OTFT) backplane for an electrophoretic display panel containing 192×150 pixels on a 6-in.-sized substrate. The average of mobilities of 36 OTFTs, which were taken from different locations of the backplane, was 0.44±0.08 cm2·V-1·s-1, with a small deviation of 20%, over a 6-in.-size area comprising 28,800 OTFTs. This process providing high mobility and high uniformity can be achieved by simply maintaining the whole area of the substrate at a specific temperature (46 °C in this case) during drying of the droplets.

  8. Thermally dried ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene for high mobility and high uniformity on a large area substrate

    Ryu, Gi Seong; Lee, Myung Won; Jeong, Seung Hyeon; Song, Chung Kun

    2012-01-01

    In this study we developed a simple ink-jet process for 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene), which is known as a high-mobility soluble organic semiconductor, to achieve relatively high-mobility and high-uniformity performance for large-area applications. We analyzed the behavior of fluorescent particles in droplets and applied the results to determining a method of controlling the behavior of TIPS-pentacene molecules. The grain morphology of TIPS-pentacene varied depending on the temperature applied to the droplets during drying. We were able to obtain large and uniform grains at 46 degrees C without any "coffee stain". The process was applied to a large-size organic thin-film transistor (OTFT) backplane for an electrophoretic display panel containing 192 x 150 pixels on a 6-in.-sized substrate. The average of mobilities of 36 OTFTs, which were taken from different locations of the backplane, was 0.44 +/- 0.08 cm2.V-1.s-1, with a small deviation of 20%, over a 6-in.-size area comprising 28,800 OTFTs. This process providing high mobility and high uniformity can be achieved by simply maintaining the whole area of the substrate at a specific temperature (46 degrees C in this case) during drying of the droplets.

  9. Therapeutic potential of an anti-high mobility group box-1 monoclonal antibody in epilepsy.

    Zhao, Junli; Wang, Yi; Xu, Cenglin; Liu, Keyue; Wang, Ying; Chen, Liying; Wu, Xiaohua; Gao, Feng; Guo, Yi; Zhu, Junming; Wang, Shuang; Nishibori, Masahiro; Chen, Zhong

    2017-08-01

    Brain inflammation is a major factor in epilepsy, and the high mobility group box-1 (HMGB1) protein is known to contribute significantly to the generation of seizures. Here, we investigated the therapeutic potential of an anti-HMGB1 monoclonal antibody (mAb) in epilepsy. anti-HMGB1 mAb attenuated both acute seizure models (maximal electroshock seizure, pentylenetetrazole-induced and kindling-induced), and chronic epilepsy model (kainic acid-induced) in a dose-dependent manner. Meanwhile, the anti-HMGB1 mAb also attenuated seizure activities of human brain slices obtained from surgical resection from drug-resistant epilepsy patients. The mAb showed an anti-seizure effect with a long-term manner and appeared to be minimal side effects at even very high dose (no disrupted physical EEG rhythm and no impaired basic physical functions, such as body growth rate and thermoregulation). This anti-seizure effect of mAb results from its inhibition of translocated HMGB1 from nuclei following seizures, and the anti-seizure effect was absent in toll-like receptor 4 knockout (TLR4 -/- ) mice. Interestingly, the anti-HMGB1 mAb also showed a disease-modifying anti-epileptogenetic effect on epileptogenesis after status epileptics, which is indicated by reducing seizure frequency and improving the impaired cognitive function. These results indicate that the anti-HMGB1 mAb should be viewed as a very promising approach for the development of novel therapies to treat refractory epilepsy. Copyright © 2017 Elsevier Inc. All rights reserved.

  10. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  11. Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

    Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

    2018-01-01

    Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

  12. Drift mobility of thermalized and highly energetic holes in thin layers of amorphous dielectric SiC

    Sielski, Jan; Jeszka, Jeremiasz K.

    2012-01-01

    The development of new technology in the electronics industry requires new dielectric materials. It is also important to understand the charge-carrier transport mechanism in these materials. We examined the hole drift mobility in amorphous SiC dielectric thin films using the time-of-flight (TOF) method. Charge carriers were generated using an electron gun. The generated holes gave a dispersive TOF signal and the mobility was low. For electric field strengths above 4 x 10 5 V cm -1 the drift mobility shows a very strong dependence on the electric field and a weak temperature dependence (transport of ''high-energy'' charge carriers). At lower electric fields and for thermalized charge carriers the mobility is practically field independent and thermally activated. The observed phenomenon was attributed to the changes in the effective energy of the generated carriers moving in the high electric fields and consequently in the density of localized states taking part in the transport. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Mobility Optimization in LaxBa1-xSnO3 Thin Films Deposited via High Pressure Oxygen Sputtering

    Postiglione, William Michael

    BaSnO3 (BSO) is one of the most promising semiconducting oxides currently being explored for use in future electronic applications. BSO possesses a unique combination of high room temperature mobility (even at very high carrier concentrations, > 1019 cm-3), wide band gap, and high temperature stability, making it a potentially useful material for myriad applications. Significant challenges remain however in optimizing the properties and processing of epitaxial BSO, a critical step towards industrial applications. In this study we investigate the viability of using high pressure oxygen sputtering to produce high mobility La-doped BSO thin films. In the first part of our investigation we synthesized, using solid state reaction, phase-pure stoichiometric polycrystalline 2% La-doped BaSnO 3 for use as a target material in our sputtering system. We verified the experimental bulk lattice constant, 4.117 A, to be in good agreement with literature values. Next, we set out to optimize the growth conditions for DC sputtering of La doped BaSnO3. We found that mobility for all our films increased monotonically with deposition temperature, suggesting the optimum temperature for deposition is > 900 °C and implicating a likely improvement in transport properties with post-growth thermal anneal. We then preformed systematic studies aimed at probing the effects of varying thickness and deposition rate to optimize the structural and electronic transport properties in unbuffered BSO films. In this report we demonstrate the ability to grow 2% La BSO thin films with an effective dopant activation of essentially 100%. Our films showed fully relaxed (bulk), out-of-plane lattice parameter values when deposited on LaAlO3, MgO, and (LaAlO3)0.3(Sr2 TaAlO6)0.7 substrates, and slightly expanded out-of-plane lattice parameters for films deposited on SrTiO3, GdScO3, and PrScO3 substrates. The surface roughness's of our films were measured via AFM, and determined to be on the nm scale or better

  14. Human engineering in mobile radwaste systems

    Jones, D.; McMahon, J.; Motl, G.

    1988-01-01

    To a large degree, mobile radwaste systems are replacing installed plant systems at US nuclear plants due to regulatory obsolescence, high capital and maintenance costs, and increased radiation exposure. Well over half the power plants in the United States now use some sort of mobile system similar to those offered by LN Technologies Corporation. Human engineering is reflected in mobile radwaste system design due to concerns about safety, efficiency, and cost. The radwaste services business is so competitive that vendors must reflect human engineering in several areas of equipment design in order to compete. The paper discusses radiation exposure control, contamination control, compact components, maintainability, operation, and transportability

  15. Mobile Usability

    Aryana, Bijan; Clemmensen, Torkil

    2013-01-01

    In this article, a country specific comparative mobile usability study is presented, using Iran and Turkey as the two chosen emerging/emergent nation exemplars of smartphone usage and adoption. In a focus group study, three mobile applications were selected by first-time users of smartphones...... personal contacts. The results and analysis establish the existence of country specific issues and concerns, as well as reveal generic usability issues. The article concludes that the source of these issues is most likely due to a combination of certain contextual features endemic to both Iran and Turkey...

  16. Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

    Ding, Xiangzhen; Yang, Shuai; Miao, Bin; Gu, Le; Gu, Zhiqi; Zhang, Jian; Wu, Baojun; Wang, Hong; Wu, Dongmin; Li, Jiadong

    2018-04-18

    A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

  17. A Unique Blend of 2-Fluorenyl-2-anthracene and 2-Anthryl-2-anthracence Showing White Emission and High Charge Mobility.

    Chen, Mengyun; Zhao, Yang; Yan, Lijia; Yang, Shuai; Zhu, Yanan; Murtaza, Imran; He, Gufeng; Meng, Hong; Huang, Wei

    2017-01-16

    White-light-emitting materials with high mobility are necessary for organic white-light-emitting transistors, which can be used for self-driven OLED displays or OLED lighting. In this study, we combined two materials with similar structures-2-fluorenyl-2-anthracene (FlAnt) with blue emission and 2-anthryl-2-anthracence (2A) with greenish-yellow emission-to fabricate OLED devices, which showed unusual solid-state white-light emission with the CIE coordinates (0.33, 0.34) at 10 V. The similar crystal structures ensured that the OTFTs based on mixed FlAnt and 2A showed high mobility of 1.56 cm 2  V -1  s -1 . This simple method provides new insight into the design of high-performance white-emitting transistor materials and structures. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Passive Mobile Bandwidth Classification Using Short Lived TCP Connections

    Michelinakis, Foivos; Kreitz, Gunnar; Petrocco, Riccardo; Zhang, Boxun; Widmer, Joerg

    2015-01-01

    Consumption of multimedia content is moving from a residential environment to mobile phones. Optimizing Quality of Experience—smooth, quick, and high quality playback—is more difficult in this setting, due to the highly dynamic nature of wireless links. A key requirement for achieving this goal is estimating the available bandwidth of mobile devices. Ideally, this should be done quickly and with low overhead. One challenge is that the majority of connections on mobiles are short-lived TCP con...

  19. High mobility In{sub 2}O{sub 3}:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

    Macco, B.; Wu, Y.; Vanhemel, D. [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Kessels, W.M.M. [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Solliance Solar Research, Eindhoven (Netherlands)

    2014-12-01

    The preparation of high-quality In{sub 2}O{sub 3}:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In{sub 2}O{sub 3}:H films were deposited by atomic layer deposition at 100 C, after which they underwent solid phase crystallization by a short anneal at 200 C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm{sup 2}/V s at a device-relevant carrier density of 1.8 x 10{sup 20} cm{sup -3}. Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  1. Electro-thermal injuries due to high-current accidents with special regard to the skeletal muscles

    Rausch, M.

    1982-02-25

    Seven patients suffering from high-current accidents with different degrees of severity are reported on. Damages to the striped musculature are preferentially considered. When the function of the cellular membrane is affected by an electric current, the Na/sup +//K/sup +/ mechanism collapses due to an increase of membrane permeability for calcium. Depolarisation, development of contractures, changes of the fibrillar structures and decay of the stripes or swelling of the Q (A) substance were found to indicate damage. A particular effect of electrothermal muscle damages is the affection of other organs, e.g. of the kidneys, provoked by an increased chromoprotein production and a higher output of myoglobin and hemoglobin. Since in case of an accident due to electric current affecting the musculature, more acid substances enter the vascular system, an acute renal damage provoked by an alkalinisation of the urine, shall be treated by drugs. In most cases, an anuria, occurring several days after deep burn of musculature, is a so-called constipational anuria, if it is not an anuria induced by a decrease of blood pressure or by shock. The therapy of wounds due to electrical burning depends on the size of the affected skin area and down to which depth the tissue is burnt. Particular attention must be paid to the affection of bones being situated in the depth of wounds due to burning. In the last part of the study possible reconstructive and ensuing rehabilitation measures are indicated.

  2. Quantitative Fluorescence Sensing Through Highly Autofluorescent, Scattering, and Absorbing Media Using Mobile Microscopy

    Göröcs, Zoltán

    2016-09-13

    Compact and cost-effective systems for in vivo fluorescence and near-infrared imaging in combination with activatable reporters embedded inside the skin to sample interstitial fluid or blood can enable a variety of biomedical applications. However, the strong autofluorescence of human skin creates an obstacle for fluorescence-based sensing. Here we introduce a method for quantitative fluorescence sensing through highly autofluorescent, scattering, and absorbing media. For this, we created a compact and cost-effective fluorescence microscope weighing <40 g and used it to measure various concentrations of a fluorescent dye embedded inside a tissue phantom, which was designed to mimic the optical characteristics of human skin. We used an elliptical Gaussian beam excitation to digitally separate tissue autofluorescence from target fluorescence, although they severely overlap in both space and optical spectrum. Using ∼10-fold less excitation intensity than the safety limit for skin radiation exposure, we successfully quantified the density of the embedded fluorophores by imaging the skin phantom surface and achieved a detection limit of ∼5 × 105 and ∼2.5 × 107 fluorophores within ∼0.01 μL sample volume that is positioned 0.5 and 2 mm below the phantom surface, corresponding to a concentration of 105.9 pg/mL and 5.3 ng/mL, respectively. We also confirmed that this approach can track the spatial misalignments of the mobile microscope with respect to the embedded target fluorescent volume. This wearable microscopy platform might be useful for designing implantable biochemical sensors with the capability of spatial multiplexing to continuously monitor a panel of biomarkers and chronic conditions even at patients’ home.

  3. Quantitative Fluorescence Sensing Through Highly Autofluorescent, Scattering, and Absorbing Media Using Mobile Microscopy

    Gö rö cs, Zoltá n; Rivenson, Yair; Ceylan Koydemir, Hatice; Tseng, Derek; Troy, Tamara L.; Demas, Vasiliki; Ozcan, Aydogan

    2016-01-01

    Compact and cost-effective systems for in vivo fluorescence and near-infrared imaging in combination with activatable reporters embedded inside the skin to sample interstitial fluid or blood can enable a variety of biomedical applications. However, the strong autofluorescence of human skin creates an obstacle for fluorescence-based sensing. Here we introduce a method for quantitative fluorescence sensing through highly autofluorescent, scattering, and absorbing media. For this, we created a compact and cost-effective fluorescence microscope weighing <40 g and used it to measure various concentrations of a fluorescent dye embedded inside a tissue phantom, which was designed to mimic the optical characteristics of human skin. We used an elliptical Gaussian beam excitation to digitally separate tissue autofluorescence from target fluorescence, although they severely overlap in both space and optical spectrum. Using ∼10-fold less excitation intensity than the safety limit for skin radiation exposure, we successfully quantified the density of the embedded fluorophores by imaging the skin phantom surface and achieved a detection limit of ∼5 × 105 and ∼2.5 × 107 fluorophores within ∼0.01 μL sample volume that is positioned 0.5 and 2 mm below the phantom surface, corresponding to a concentration of 105.9 pg/mL and 5.3 ng/mL, respectively. We also confirmed that this approach can track the spatial misalignments of the mobile microscope with respect to the embedded target fluorescent volume. This wearable microscopy platform might be useful for designing implantable biochemical sensors with the capability of spatial multiplexing to continuously monitor a panel of biomarkers and chronic conditions even at patients’ home.

  4. High mobility group A1 protein modulates autophagy in cancer cells.

    Conte, Andrea; Paladino, Simona; Bianco, Gaia; Fasano, Dominga; Gerlini, Raffaele; Tornincasa, Mara; Renna, Maurizio; Fusco, Alfredo; Tramontano, Donatella; Pierantoni, Giovanna Maria

    2017-11-01

    High Mobility Group A1 (HMGA1) is an architectural chromatin protein whose overexpression is a feature of malignant neoplasias with a causal role in cancer initiation and progression. HMGA1 promotes tumor growth by several mechanisms, including increase of cell proliferation and survival, impairment of DNA repair and induction of chromosome instability. Autophagy is a self-degradative process that, by providing energy sources and removing damaged organelles and misfolded proteins, allows cell survival under stress conditions. On the other hand, hyper-activated autophagy can lead to non-apoptotic programmed cell death. Autophagy deregulation is a common feature of cancer cells in which has a complex role, showing either an oncogenic or tumor suppressor activity, depending on cellular context and tumor stage. Here, we report that depletion of HMGA1 perturbs autophagy by different mechanisms. HMGA1-knockdown increases autophagosome formation by constraining the activity of the mTOR pathway, a major regulator of autophagy, and transcriptionally upregulating the autophagy-initiating kinase Unc-51-like kinase 1 (ULK1). Consistently, functional experiments demonstrate that HMGA1 binds ULK1 promoter region and negatively regulates its transcription. On the other hand, the increase in autophagosomes is not associated to a proportionate increase in their maturation. Overall, the effects of HMGA1 depletion on autophagy are associated to a decrease in cell proliferation and ultimately impact on cancer cells viability. Importantly, silencing of ULK1 prevents the effects of HMGA1-knockdown on cellular proliferation, viability and autophagic activity, highlighting how these effects are, at least in part, mediated by ULK1. Interestingly, this phenomenon is not restricted to skin cancer cells, as similar results have been observed also in HeLa cells silenced for HMGA1. Taken together, these results clearly indicate HMGA1 as a key regulator of the autophagic pathway in cancer cells

  5. Potentiation of NMDA receptor-dependent cell responses by extracellular high mobility group box 1 protein.

    Marco Pedrazzi

    Full Text Available BACKGROUND: Extracellular high mobility group box 1 (HMGB1 protein can operate in a synergistic fashion with different signal molecules promoting an increase of cell Ca(2+ influx. However, the mechanisms responsible for this effect of HMGB1 are still unknown. PRINCIPAL FINDINGS: Here we demonstrate that, at concentrations of agonist per se ineffective, HMGB1 potentiates the activation of the ionotropic glutamate N-methyl-D-aspartate receptor (NMDAR in isolated hippocampal nerve terminals and in a neuroblastoma cell line. This effect was abolished by the NMDA channel blocker MK-801. The HMGB1-facilitated NMDAR opening was followed by activation of the Ca(2+-dependent enzymes calpain and nitric oxide synthase in neuroblastoma cells, resulting in an increased production of NO, a consequent enhanced cell motility, and onset of morphological differentiation. We have also identified NMDAR as the mediator of HMGB1-stimulated murine erythroleukemia cell differentiation, induced by hexamethylenebisacetamide. The potentiation of NMDAR activation involved a peptide of HMGB1 located in the B box at the amino acids 130-139. This HMGB1 fragment did not overlap with binding sites for other cell surface receptors of HMGB1, such as the advanced glycation end products or the Toll-like receptor 4. Moreover, in a competition assay, the HMGB1((130-139 peptide displaced the NMDAR/HMGB1 interaction, suggesting that it comprised the molecular and functional site of HMGB1 regulating the NMDA receptor complex. CONCLUSION: We propose that the multifunctional cytokine-like molecule HMGB1 released by activated, stressed, and damaged or necrotic cells can facilitate NMDAR-mediated cell responses, both in the central nervous system and in peripheral tissues, independently of other known cell surface receptors for HMGB1.

  6. Interface characteristics of spin-on-dielectric SiO{sub x}-buffered passivation layers for AlGaN/GaN high electron mobility transistors

    Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of); Sheen, Mi-Hyang [Department of Materials Science Engineering, Seoul National University, 151-742 Seoul (Korea, Republic of); Kim, Sam-Dong, E-mail: samdong@dongguk.edu [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of)

    2015-08-31

    To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO{sub x}-buffered passivation structure compared to the conventional Si{sub 3}N{sub 4} passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si{sub 3}N{sub 4} passivation was in the range of 10{sup 12}–10{sup 13} cm{sup −2} eV{sup −1}, which is one-order higher than that of the SOD (10{sup 11}–10{sup 12} cm{sup −2} eV{sup −1}) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si{sub 3}N{sub 4} passivation. A well-resolved reduction of the electron Hall mobility of the Si{sub 3}N{sub 4} passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics.

  7. Effect of dewatering on seismic performance of multi-anchor wall due to high ground water level

    Kobayashi, Makoto; Miura, Kinya; Konami, Takeharu; Hayashi, Taketo; Sato, Hiroki

    2017-10-01

    Previous research reported that the ground water in the backfill of reinforced soil wall made it deteriorate. According to the damage investigation of Great East Earthquake 2011, the reinforced soil structure due to high ground water level by seismic wave were deformed remarkably. Some of them classified ultimate limit state or restorability limit state. However, more than 90% of reinforced soil structure, which suffered from this earthquake, were classified into no damage condition. Therefore, it is necessary that the seismic behaviors of multi-anchor wall due to seepage flow should be clarified in order to adopt the performance-based design in such reinforced soil structure. In this study, a series of centrifugal shaking table tests were conducted to investigate the seismic behavior of multi-anchor wall due to high ground water level. The reinforced drainage pipes were installed into the backfill in order to verify the dewatering effect and additional reinforcement. Furthermore, to check only the dewatering effect, the model tests was carried out with several ground water table that was modeled the case reinforced drainage pipes installed. The test results show unique behavior of reinforced region that moved integrally. This implies that the reinforced region has been behaved as if it became one mass, and this behavior make this structure increase seismic performance. Thus, the effectiveness of dewatering was observed remarkably because of decreasing the inertial force during earthquake.

  8. Edema worsens target coverage in high-dose-rate interstitial brachytherapy of mobile tongue cancer: a report of two cases.

    Yoshida, Ken; Yamazaki, Hideya; Kotsuma, Tadayuki; Akiyama, Hironori; Takenaka, Tadashi; Masui, Koji; Yoshioka, Yasuo; Uesugi, Yasuo; Shimbo, Taiju; Yoshikawa, Nobuhiko; Yoshioka, Hiroto; Arika, Takumi; Tanaka, Eiichi; Narumi, Yoshifumi

    2017-02-01

    We report our study on two patients to highlight the risk of underdosage of the clinical target volume (CTV) due to edema during high-dose-rate interstitial brachytherapy (HDR-ISBT) of mobile tongue cancer. To treat the lateral side of the CTV, flexible applicator tubes were implanted on the mouth floor. Two-dimensional planning was performed using X-ray images for Case 1, and three-dimensional (3D) planning was performed using computed tomography (CT) for Case 2. Prescribed doses for both cases were 54 Gy in nine fractions. Case 1 was treated for cancer of the right lateral border of the tongue in 2005. Tongue edema occurred after implantation, and part of the lateral border of the tongue protruded between the applicator tubes. Acute mucosal reaction abated in the protruded area earlier than in the other parts of the CTV. In this case, the tumor recurred in this area 5 months after the treatment. Case 2 was treated for cancer of the left lateral border of the tongue. Because tongue edema occurred in this case also, plastic splints were inserted between the applicator tubes to push the edematous region into the irradiated area. The mucosal surface of the CTV was covered by the 70% isodose, and 100% isodose line for before and after splint insertion. Local control of the tumor was achieved 4 years after treatment. To ensure sufficient target coverage, 3D image-based planning using CT should be performed, followed by re-planning using repeated CT as needed. Also, the development of devices to prevent protrusion of the edematous tissue outside the target area will help to ensure the full dosing of CTV.

  9. Investigation of drift gas selectivity in high resolution ion mobility spectrometry with mass spectrometry detection.

    Matz, Laura M; Hill, Herbert H; Beegle, Luther W; Kanik, Isik

    2002-04-01

    Recent studies in electrospray ionization (ESI)/ion mobility spectrometry (IMS) have focussed on employing different drift gases to alter separation efficiency for some molecules. This study investigates four structurally similar classes of molecules (cocaine and metabolites, amphetamines, benzodiazepines, and small peptides) to determine the effect of structure on relative mobility changes in four drift gases (helium, nitrogen, argon, carbon dioxide). Collision cross sections were plotted against drift gas polarizability and a linear relationship was found for the nineteen compounds evaluated in the study. Based on the reduced mobility database, all nineteen compounds could be separated in one of the four drift gases, however, the drift gas that provided optimal separation was specific for the two compounds.

  10. Gamma ray heating rates due to chromium isotopes in stellar core during late stages of high mass stars (>10M⊙

    Nabi Jameel-Un

    2017-01-01

    Full Text Available Gamma ray heating rates are thought to play a crucial role during the pre-supernova stage of high mass stars. Gamma ray heating rates, due to β±-decay and electron (positron capture on chromium isotopes, are calculated using proton-neutron quasiparticle random phase approximation theory. The electron capture significantly affects the lepton fraction (Ye and accelerates the core contraction. The gamma rays emitted as a result of weak processes heat the core and tend to hinder the cooling and contraction due to electron capture and neutrino emission. The emitted gamma rays tend to produce enormous entropy and set the convection to play its role at this stage. The gamma heating rates, on 50-60Cr, are calculated for the density range 10 < ρ (g.cm-3 < 1011 and temperature range 107 < T (K < 3.0×1010.

  11. High mobility 2D electron gas in CdTe/CdMgTe heterostructures

    Karczewski, G.; Jaroszynski, J.; Kurowski, M.; Barcz, A.; Wojtowicz, T.; Kossut, J.

    1997-01-01

    We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd 1-y Mg y Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd 1-y Mg y Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10 5 cm 2 /(Vs). This is the highest mobility reported in wide-gap II-VI materials

  12. Phase III trial of high- vs. low-dose-rate interstitial radiotherapy for early mobile tongue cancer

    Inoue, Takehiro; Inoue, Toshihiko; Yoshida, Ken; Yoshioka, Yasuo; Shimamoto, Shigetoshi; Tanaka, Eiichi; Yamazaki, Hideya; Shimizutani, Kimishige; Teshima, Teruki; Furukawa, Souhei

    2001-01-01

    Purpose: Early mobile tongue cancer can be controlled with interstitial radiotherapy (ISRT). We carried out a Phase III trial to compare the treatment results of low-dose-rate (Ld) ISRT and high-dose-rate (HDR) ISRT for early mobile tongue cancer. Methods and Materials: From April 1992 through October 1996, 59 patients with cancer of the early mobile tongue were registered in this Phase III study. Eight patients were excluded from the evaluation because of violations of the requirements for this study. Of 51 eligible patients, 26 patients were treated with LDR-ISRT (70 Gy/4-9 days) and 25 patients with HDR-ISRT (60 Gy/10 fractions/1 week). For the hyperfractionated HDR-ISRT, the time interval between 2 fractions was more than 6 h. Results: Five-year local control rates of the LDR and HDR groups were 84% and 87% respectively. Nodal metastasis occurred in 6 patients in each group. Five-year nodal control rates of the LDR and HDR groups were 77% and 76%, respectively. Conclusion: Hyperfractionated HDR-ISRT for early mobile tongue cancer has the same local control compared with continuous LDR-ISRT. Hyperfractionated HDR-ISRT is an alternative treatment for continuous LDR-ISRT

  13. Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method.

    Yuan, Yongbo; Giri, Gaurav; Ayzner, Alexander L; Zoombelt, Arjan P; Mannsfeld, Stefan C B; Chen, Jihua; Nordlund, Dennis; Toney, Michael F; Huang, Jinsong; Bao, Zhenan

    2014-01-01

    Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43 cm(2) Vs(-1) (25 cm(2) Vs(-1) on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.

  14. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

    Fortunato, Elvira M.C.; Barquinha, Pedro M.C.; Pimentel, Ana C.M.B.G.; Goncalves, Alexandra M.F.; Marques, Antonio J.S.; Martins, Rodrigo F.P.; Pereira, Luis M.N.

    2004-01-01

    We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a saturation mobility of 27 cm 2 /V s, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3x10 5 . The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics

  15. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

    Chowdhury, Subhra; Biswas, Dhrubes; Chattaraj, Swarnabha

    2015-01-01

    For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current–voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure. (paper)

  16. High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

    Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it; Barra, M.; Ciccullo, F.; Cassinese, A. [CNR-SPIN and Physics Department, University of Naples, Piazzale Tecchio 80, I-80125 Naples (Italy); Toccoli, T.; Aversa, L.; Tatti, R.; Verucchi, R. [IMEM-CNR-FBK Division of Trento, Via alla Cascata 56/C, I-38123 Povo (Italy); Iannotta, S. [IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma (Italy)

    2014-04-07

    In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

  17. International student mobility and highly skilled migration: a comparative study of Canada, the United States, and the United Kingdom.

    She, Qianru; Wotherspoon, Terry

    2013-12-01

    Against the backdrop of demographic change and economic reconfiguration, recruiting international students, especially those at tertiary level, has drawn growing attention from advanced economies as part of a broad strategy to manage highly skilled migration. This comparative study focuses on three English speaking countries receiving international students: Canada, the United States, and the United Kingdom. International student policies, in particular entry and immigration regulations, and the trends in student mobility since the late 1990s are examined drawing on secondary data. By exploring the issue from the political economy perspectives, this study identifies distinct national strategies for managing student mobility, determines key factors shaping the environment of student migration in each nation, and addresses the deficiency of human capital theory in the analysis of global competition for high skills.

  18. New Approaches to Capture High Frequency Agricultural Dynamics in Africa through Mobile Phones

    Evans, T. P.; Attari, S.; Plale, B. A.; Caylor, K. K.; Estes, L. D.; Sheffield, J.

    2015-12-01

    Crop failure early warning systems relying on remote sensing constitute a new critical resource to assess areas where food shortages may arise, but there is a disconnect between the patterns of crop production on the ground and the environmental and decision-making dynamics that led to a particular crop production outcome. In Africa many governments use mid-growing season household surveys to get an on-the-ground assessment of current agricultural conditions. But these efforts are cost prohibitive over large scales and only offer a one-time snapshot at a particular time point. They also rely on farmers to recall past decisions and farmer recall may be imperfect when answering retrospectively on a decision made several months back (e.g. quantity of seed planted). We introduce a novel mobile-phone based approach to acquire information from farmers over large spatial extents, at high frequency at relatively low-cost compared to household survey approaches. This system makes compromises in number of questions which can feasibly be asked of a respondent (compared to household interviews), but the benefit of capturing weekly data from farmers is very exciting. We present data gathered from farmers in Kenya and Zambia to understand key dimensions of agricultural decision making such as choice of seed variety/planting date, frequency and timing of weeding/fertilizing and coping strategies such as pursuing off-farm labor. A particularly novel aspect of this work is reporting from farmers of what their expectation of end-season harvest will be on a week-by-week basis. Farmer's themselves can serve as sentinels of crop failure in this system. And farmers responses to drought are as much driven by their expectations of looming crop failure that may be different from that gleaned from remote sensing based assessment. This work is one piece of a larger design to link farmers to high-density meteorological data in Africa as an additional tool to improve crop failure early warning

  19. Solving Component Structural Dynamic Failures Due to Extremely High Frequency Structural Response on the Space Shuttle Program

    Frady, Greg; Nesman, Thomas; Zoladz, Thomas; Szabo, Roland

    2010-01-01

    For many years, the capabilities to determine the root-cause failure of component failures have been limited to the analytical tools and the state of the art data acquisition systems. With this limited capability, many anomalies have been resolved by adding material to the design to increase robustness without the ability to determine if the design solution was satisfactory until after a series of expensive test programs were complete. The risk of failure and multiple design, test, and redesign cycles were high. During the Space Shuttle Program, many crack investigations in high energy density turbomachines, like the SSME turbopumps and high energy flows in the main propulsion system, have led to the discovery of numerous root-cause failures and anomalies due to the coexistences of acoustic forcing functions, structural natural modes, and a high energy excitation, such as an edge tone or shedding flow, leading the technical community to understand many of the primary contributors to extremely high frequency high cycle fatique fluid-structure interaction anomalies. These contributors have been identified using advanced analysis tools and verified using component and system tests during component ground tests, systems tests, and flight. The structural dynamics and fluid dynamics communities have developed a special sensitivity to the fluid-structure interaction problems and have been able to adjust and solve these problems in a time effective manner to meet budget and schedule deadlines of operational vehicle programs, such as the Space Shuttle Program over the years.

  20. Technical baseline description of high-level waste and low-activity waste feed mobilization and delivery

    Papp, I.G.

    1997-01-01

    This document is a compilation of information related to the high-level waste (HLW) and low-activity waste (LAW) feed staging, mobilization, and transfer/delivery issues. Information relevant to current Tank Waste Remediation System (TWRS) inventories and activities designed to feed the Phase I Privatization effort at the Hanford Site is included. Discussions on the higher level Phase II activities are offered for a perspective on the interfaces

  1. Neutronic-thermohydraulic oscillatory instability in modern PWRs due to high concentrations of boron in the water

    Novelli, A.

    1985-01-01

    Conspicuous amounts of boric acid are normally dissolved into the moderator of a modern PWR, especially in BOL operative conditions. If the concentration of such a neutronic poison attains certain limits, the nuclear temperature coefficient of the moderator, which is highly negative in the absence of boron, may turn about and reach positive values, due to the strong thermal expansion of the water. A dynamical model of a PWR system is presented, facilitating a quick stability analysis related to the co-ordination of boric acid solution in the water and control-rod insertion in the core. (author)

  2. Effects of Intradistrict School Mobility and High Student Turnover Rates on Early Reading Achievement

    LeBoeuf, Whitney A.; Fantuzzo, John W.

    2018-01-01

    The primary aim of this study was to assess the relations between concurrent, cumulative, and contextual intradistrict school mobility and early reading achievement. Longitudinal administrative school records were used for an entire cohort of students in a large urban district from first through third grade. Findings indicated that students with a…

  3. Performance of high-level and low-level control for coordination of mobile robots

    Adinandra, S.; Caarls, J.; Kostic, D.; Nijmeijer, H.

    2010-01-01

    We analyze performance of different strategies for coordinated control of mobile robots. By considering an environment of a distribution center, the robots should transport goods from place A to place B while maintaining the desired formation and avoiding collisions. We evaluate performance of two

  4. New Model of Mobile Learning for the High School Students Preparing for the Unified State Exam

    Khasianov, Airat; Shakhova, Irina

    2017-01-01

    In this paper we study a new model of mobile learning for the Unified State Exam ("USE") preparation in Russian Federation. "USE"--is the test school graduates need to pass in order to obtain Russian matura. In recent years the efforts teachers put for preparation of their students to the "USE" diminish how well the…

  5. Towards High Power Density Metal Supported Solid Oxide Fuel Cell for Mobile Applications

    Nielsen, Jimmi; Persson, Åsa H.; Muhl, Thuy Thanh

    2018-01-01

    For use of metal supported solid oxide fuel cell (MS-SOFC) in mobile applications it is important to reduce the thermal mass to enable fast startup, increase stack power density in terms of weight and volume and reduce costs. In the present study, we report on the effect of reducing the Technical...

  6. Towards High Power Density Metal Supported Solid Oxide Fuel Cell for Mobile Applications

    Nielsen, Jimmi; Persson, Åsa Helen; Muhl, Thuy

    2017-01-01

    For use of metal supported SOFC in mobile applications it is important to reduce the thermal mass to enable fast start up, increase stack power density in terms of weight and volume and reduce costs. In the present study, we report on the effect of reducing the support layer thickness of 313 μm...

  7. High Charge Mobility of a Perylene Bisimide Dye with Hydrogen-bond Formation Group

    2005-01-01

    A perylene bisimide dye covalently bonded with a hydrogen-bond formation group of 1,3, 5-triazine-2, 4-diamine has been synthesized. Its casting films show a charge carrier mobility over 10-3 cm2/Vs, which is in the range of the highest values found for other promising charge transport materials suitable for solution processable technique.

  8. Schooling for Social Mobility: High School Reform for College Access and Success

    Hammack, Floyd M.

    2016-01-01

    This article addresses what schools that seek to promote social mobility as opposed to status maintenance among their students really ask of them. Focusing on several prominent charter school organizations, the article details the social and behavioral expectations of the schools and understands them through an application of Goffman's work on…

  9. High inter-tester reliability of the new mobility score in patients with hip fracture

    Kristensen, M.T.; Bandholm, T.; Foss, N.B.

    2008-01-01

    OBJECTIVE: To assess the inter-tester reliability of the New Mobility Score in patients with acute hip fracture. DESIGN: An inter-tester reliability study. SUBJECTS: Forty-eight consecutive patients with acute hip fracture at a median age of 84 (interquartile range, 76-89) years; 40 admitted from...

  10. Retinol-induced changes in the phosphorylation levels of histones and high mobility group proteins from Sertoli cells

    Moreira J.C.F.

    2000-01-01

    Full Text Available Chromatin proteins play a role in the organization and functions of DNA. Covalent modifications of nuclear proteins modulate their interactions with DNA sequences and are probably one of the multiple factors involved in the process of switch on/off transcriptionally active regions of DNA. Histones and high mobility group proteins (HMG are subject to many covalent modifications that may modulate their capacity to bind to DNA. We investigated the changes induced in the phosphorylation pattern of cultured Wistar rat Sertoli cell histones and high mobility group protein subfamilies exposed to 7 µM retinol for up to 48 h. In each experiment, 6 h before the end of the retinol treatment each culture flask received 370 KBq/ml [32P]-phosphate. The histone and HMGs were isolated as previously described [Moreira et al. Medical Science Research (1994 22: 783-784]. The total protein obtained by either method was quantified and electrophoresed as described by Spiker [Analytical Biochemistry (1980 108: 263-265]. The gels were stained with Coomassie brilliant blue R-250 and the stained bands were cut and dissolved in 0.5 ml 30% H2O2 at 60oC for 12 h. The vials were chilled and 5.0 ml scintillation liquid was added. The radioactivity in each vial was determined with a liquid scintillation counter. Retinol treatment significantly changed the pattern of each subfamily of histone and high mobility group proteins.

  11. The risk of sequelae due to pneumococcal meningitis in high-income countries: a systematic review and meta-analysis.

    Jit, Mark

    2010-07-01

    To determine the risk of various kinds of sequelae in survivors of meningitis due to Streptococcus pneumoniae, as well as the influence of co-factors such as study design, study population and treatment on this risk. MEDLINE, EMBASE and the Cochrane Central Register of Controlled Trials (CENTRAL) were searched from 1 September 1991 to 18 June 2009 for original articles on pneumococcal meningitis sequelae. Prevalence of sequelae was pooled using random effects meta-analysis. Studies were appraised for the influence of referral bias, external validity of study populations, testing procedure and publication bias. Data were extracted from 63 studies involving 3408 pneumococcal meningitis survivors. The pooled prevalence of any reported sequelae from 48 studies was 31.7% (95% confidence interval 27.2-36.3%) using a random effects model (Cochran-Q = 277, p < 0.01). Differences in studies due to design, study population and treatment were not significant. The pooled prevalence of hearing loss, seizures, hydrocephalus, spasticity/paresis, cranial nerve palsies and visual impairment was 20.9% (17.1-24.7%), 6.5% (3.3-9.7%), 6.8% (3.3-10.2%), 8.7% (6.4-11.0%), 12.2% (5.3-19.1%) and 2.4% (0-5.7%) respectively. The burden of sequelae due to pneumococcal meningitis remains high in the reviewed studies.

  12. Service-oriented workflow to efficiently and automatically fulfill products in a highly individualized web and mobile environment

    Qiao, Mu

    2015-03-01

    Service Oriented Architecture1 (SOA) is widely used in building flexible and scalable web sites and services. In most of the web or mobile photo book and gifting business space, the products ordered are highly variable without a standard template that one can substitute texts or images from similar to that of commercial variable data printing. In this paper, the author describes a SOA workflow in a multi-sites, multi-product lines fulfillment system where three major challenges are addressed: utilization of hardware and equipment, highly automation with fault recovery, and highly scalable and flexible with order volume fluctuation.

  13. A first look at mobile internet use in township communities in South Africa

    Phokeer, A

    2016-11-01

    Full Text Available data to gain insights about mobile data usage patterns and the underlying reasons for user behavior concerning mobile data usage. Due to the limited availability of public free Wi-Fi and despite the relatively high cost of mobile data, we find that a...

  14. Test and cull of high risk Coxiella burnetii infected pregnant dairy goats is not feasible due to poor test performance.

    Hogerwerf, Lenny; Koop, Gerrit; Klinkenberg, Don; Roest, Hendrik I J; Vellema, Piet; Nielen, Mirjam

    2014-05-01

    A major human Q fever epidemic occurred in The Netherlands during 2007-2009. In response, all pregnant goats from infected herds were culled before the 2010 kidding season without individual testing. The aim of this study was to assess whether high risk animals from recently infected naive herds can be identified by diagnostic testing. Samples of uterine fluid, milk and vaginal mucus from 203 euthanized pregnant goats were tested by PCR or ELISA. The results suggest that testing followed by culling of only the high risk animals is not a feasible method for protecting public health, mainly due to the low specificity of the tests and variability between herds. The risk of massive bacterial shedding during abortion or parturition can only be prevented by removal of all pregnant animals from naive recently infected herds. Copyright © 2014 Elsevier Ltd. All rights reserved.

  15. Disulfide high mobility group box-1 causes bladder pain through bladder Toll-like receptor 4.

    Ma, Fei; Kouzoukas, Dimitrios E; Meyer-Siegler, Katherine L; Westlund, Karin N; Hunt, David E; Vera, Pedro L

    2017-05-25

    Bladder pain is a prominent symptom in several urological conditions (e.g. infection, painful bladder syndrome/interstitial cystitis, cancer). Understanding the mechanism of bladder pain is important, particularly when the pain is not accompanied by bladder pathology. Stimulation of protease activated receptor 4 (PAR4) in the urothelium results in bladder pain through release of urothelial high mobility group box-1 (HMGB1). HGMB1 has two functionally active redox states (disulfide and all-thiol) and it is not known which form elicits bladder pain. Therefore, we investigated whether intravesical administration of specific HMGB1 redox forms caused abdominal mechanical hypersensitivity, micturition changes, and bladder inflammation in female C57BL/6 mice 24 hours post-administration. Moreover, we determined which of the specific HMGB1 receptors, Toll-like receptor 4 (TLR4) or receptor for advanced glycation end products (RAGE), mediate HMGB1-induced changes. Disulfide HMGB1 elicited abdominal mechanical hypersensitivity 24 hours after intravesical (5, 10, 20 μg/150 μl) instillation. In contrast, all-thiol HMGB1 did not produce abdominal mechanical hypersensitivity in any of the doses tested (1, 2, 5, 10, 20 μg/150 μl). Both HMGB1 redox forms caused micturition changes only at the highest dose tested (20 μg/150 μl) while eliciting mild bladder edema and reactive changes at all doses. We subsequently tested whether the effects of intravesical disulfide HMGB1 (10 μg/150 μl; a dose that did not produce inflammation) were prevented by systemic (i.p.) or local (intravesical) administration of either a TLR4 antagonist (TAK-242) or a RAGE antagonist (FPS-ZM1). Systemic administration of either TAK-242 (3 mg/kg) or FPS-ZM1 (10 mg/kg) prevented HMGB1 induced abdominal mechanical hypersensitivity while only intravesical TLR4 antagonist pretreatment (1.5 mg/ml; not RAGE) had this effect. The disulfide form of HMGB1 mediates bladder pain directly (not

  16. High mobility group protein DSP1 negatively regulates HSP70 transcription in Crassostrea hongkongensis

    Miao, Zongyu; Xu, Delin; Cui, Miao; Zhang, Qizhong, E-mail: zhangqzdr@126.com

    2016-06-10

    HSP70 acts mostly as a molecular chaperone and plays important roles in facilitating the folding of nascent peptides as well as the refolding or degradation of the denatured proteins. Under stressed conditions, the expression level of HSP70 is upregulated significantly and rapidly, as is known to be achieved by various regulatory factors controlling the transcriptional level. In this study, a high mobility group protein DSP1 was identified by DNA-affinity purification from the nuclear extracts of Crassostrea hongkongensis using the ChHSP70 promoter as a bait. The specific interaction between the prokaryotically expressed ChDSP1 and the FITC-labeled ChHSP70 promoter was confirmed by EMSA analysis. ChDSP1 was shown to negatively regulate ChHSP70 promoter expression by Luciferase Reporter Assay in the heterologous HEK293T cells. Both ChHSP70 and ChDSP1 transcriptions were induced by either thermal or CdCl{sub 2} stress, while the accumulated expression peaks of ChDSP1 were always slightly delayed when compared with that of ChHSP70. This indicates that ChDSP1 is involved, very likely to exert its suppressive role, in the recovery of the ChHSP70 expression from the induced level to its original state. This study is the first to report negative regulator of HSP70 gene transcription, and provides novel insights into the mechanisms controlling heat shock protein expression. -- Highlights: •HMG protein ChDSP1 shows affinity to ChHSP70 promoter in Crassostrea hongkongensis. •ChDSP1 negatively regulates ChHSP70 transcription. •ChHSP70 and ChDSP1 transcriptions were coordinately induced by thermal/Cd stress. •ChDSP1 may contribute to the recovery of the induced ChHSP70 to its original state. •This is the first report regarding negative regulator of HSP70 transcription.

  17. Clinical Value of High Mobility Group Box 1 and the Receptor for Advanced Glycation End-products in Head and Neck Cancer: A Systematic Review

    Nguyen, Austin

    2016-04-01

    Full Text Available Introduction High mobility group box 1 is a versatile protein involved in gene transcription, extracellular signaling, and response to inflammation. Extracellularly, high mobility group box 1 binds to several receptors, notably the receptor for advanced glycation end-products. Expression of high mobility group box 1 and the receptor for advanced glycation end-products has been described in many cancers. Objectives To systematically review the available literature using PubMed and Web of Science to evaluate the clinical value of high mobility group box 1 and the receptor for advanced glycation end-products in head and neck squamous cell carcinomas. Data synthesis A total of eleven studies were included in this review. High mobility group box 1 overexpression is associated with poor prognosis and many clinical and pathological characteristics of head and neck squamous cell carcinomas patients. Additionally, the receptor for advanced glycation end-products demonstrates potential value as a clinical indicator of tumor angiogenesis and advanced staging. In diagnosis, high mobility group box 1 demonstrates low sensitivity. Conclusion High mobility group box 1 and the receptor for advanced glycation end-products are associated with clinical and pathological characteristics of head and neck squamous cell carcinomas. Further investigation of the prognostic and diagnostic value of these molecules is warranted.

  18. Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

    Liu, Hung-Chuan; Lai, Yi-Chun; Lai, Chih-Chung; Wu, Bing-Shu; Zan, Hsiao-Wen; Yu, Peichen; Chueh, Yu-Lun; Tsai, Chuang-Chuang

    2015-01-14

    In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.

  19. High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice

    Chen, C.; Holmes, S. N.; Farrer, I.; Beere, H. E.; Ritchie, D. A.

    2018-03-01

    InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2 V-1 s-1 at ambient temperature, show an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm-1 that dominates the polar-optical mode scattering from  ˜70 K to 300 K. The measured optical phonon frequency is insensitive to the carrier density modulated with a surface gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity scattering starts to dominate for temperatures  <100 K. In the high mobility In0.75Ga0.25As quantum well, GaAs-like phonons do not couple to the electron gas unlike the case of In0.53Ga0.47As quantum wells.

  20. Signal enhancement due to high-Z nanofilm electrodes in parallel plate ionization chambers with variable microgaps.

    Brivio, Davide; Sajo, Erno; Zygmanski, Piotr

    2017-12-01

    We developed a method for measuring signal enhancement produced by high-Z nanofilm electrodes in parallel plate ionization chambers with variable thickness microgaps. We used a laboratory-made variable gap parallel plate ionization chamber with nanofilm electrodes made of aluminum-aluminum (Al-Al) and aluminum-tantalum (Al-Ta). The electrodes were evaporated on 1 mm thick glass substrates. The interelectrode air gap was varied from 3 μm to 1 cm. The gap size was measured using a digital micrometer and it was confirmed by capacitance measurements. The electric field in the chamber was kept between 0.1 kV/cm and 1 kV/cm for all the gap sizes by applying appropriate compensating voltages. The chamber was exposed to 120 kVp X-rays. The current was measured using a commercial data acquisition system with temporal resolution of 600 Hz. In addition, radiation transport simulations were carried out to characterize the dose, D(x), high-energy electron current, J(x), and deposited charge, Q(x), as a function of distance, x, from the electrodes. A deterministic method was selected over Monte Carlo due to its ability to produce results with 10 nm spatial resolution without stochastic uncertainties. Experimental signal enhancement ratio, SER(G) which we defined as the ratio of signal for Al-air-Ta to signal for Al-air-Al for each gap size, was compared to computations. The individual contributions of dose, electron current, and charge deposition to the signal enhancement were determined. Experimental signals matched computed data for all gap sizes after accounting for several contributions to the signal: (a) charge carrier generated via ionization due to the energy deposited in the air gap, D(x); (b) high-energy electron current, J(x), leaking from high-Z electrode (Ta) toward low-Z electrode (Al); (c) deposited charge in the air gap, Q(x); and (d) the decreased collection efficiency for large gaps (>~500 μm). Q(x) accounts for the electrons below 100 eV, which are

  1. Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

    Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

    2007-01-01

    Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (n s ) and electron mobility (μ n ) in the HfO 2 -passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher I Dmax and an 18% higher g mmax in HEMTs with HfO 2 passivation relative to the unpassivated devices. On the other hand, I gleak of the HEMTs decreases by nearly one order of magnitude when HfO 2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO 2 -passivated HEMTs exhibit a much smaller off-state I D , indicating better turn-off characteristics

  2. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Murali Gedda

    2013-11-01

    Full Text Available Polyvinyl alcohol (PVA and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc wire base field-effect transistors (OFETs. CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  3. Separation of Opiate Isomers Using Electrospray Ionization and Paper Spray Coupled to High-Field Asymmetric Waveform Ion Mobility Spectrometry

    Manicke, Nicholas E.; Belford, Michael

    2015-05-01

    One limitation in the growing field of ambient or direct analysis methods is reduced selectivity caused by the elimination of chromatographic separations prior to mass spectrometric analysis. We explored the use of high-field asymmetric waveform ion mobility spectrometry (FAIMS), an ambient pressure ion mobility technique, to separate the closely related opiate isomers of morphine, hydromorphone, and norcodeine. These isomers cannot be distinguished by tandem mass spectrometry. Separation prior to MS analysis is, therefore, required to distinguish these compounds, which are important in clinical chemistry and toxicology. FAIMS was coupled to a triple quadrupole mass spectrometer, and ionization was performed using either a pneumatically assisted heated electrospray ionization source (H-ESI) or paper spray, a direct analysis method that has been applied to the direct analysis of dried blood spots and other complex samples. We found that FAIMS was capable of separating the three opiate structural isomers using both H-ESI and paper spray as the ionization source.

  4. High inter-tester reliability of the new mobility score in patients with hip fracture

    Kristensen, M.T.; Bandholm, T.; Foss, N.B.

    2008-01-01

    OBJECTIVE: To assess the inter-tester reliability of the New Mobility Score in patients with acute hip fracture. DESIGN: An inter-tester reliability study. SUBJECTS: Forty-eight consecutive patients with acute hip fracture at a median age of 84 (interquartile range, 76-89) years; 40 admitted from...... their own home and 8 from nursing homes to an acute orthopaedic hip fracture unit at a university hospital. METHODS: The New Mobility Score, which evaluates the prefracture functional level with a score from 0 (not able to walk at all) to 9 (fully independent), was assessed by 2 independent physiotherapists...... the prefracture functional level in patients with acute hip fracture Udgivelsesdato: 2008/7...

  5. Teaching through mobile technology : a reflection from high school studies in South Africa

    Jantjies, Mmaki; Joy, Mike

    2017-01-01

    The use of mobile technology to support teaching and learning in schools, has extended technology learning tools in schools across different socio economic divides. There have been various studies throughout the world which reflect the improvement of such technology in schools. In this chapter we reflect on a series of studies conducted in developing countries with focus on Jantjies and Joy (2012,2013,2014,2015) studies. The studies were conducted in schools with the objective of providing te...

  6. Organic phthalocyanine films with high mobilities for efficient field-effect transistor switches

    Schauer, F.; Zhivkov, I.; Nešpůrek, Stanislav

    266-269, 1-3 (2000), s. 999-1003 ISSN 0022-3093. [International Conference on Amorphous and Microcrystalline Semiconductors /18./. Snowbird, 23.08.1999-27.08.1999] R&D Projects: GA MŠk OC 518.10; GA AV ČR KSK2050602 Institutional research plan: CEZ:AV0Z4050913 Keywords : phthalocyanine * charge mobility * field-effect transistor Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.269, year: 2000

  7. Mobile Phone Dependency among High School Students in Rural Area, Central Java

    Ratih Dewi Yudhani

    2016-01-01

    BACKGROUND : Studies have shown that frequent use of mobile phone, either smartphone or non-smartphone, may cause at least 16 inadvertent health-related effects: serious addiction, painful withdrawal, back pro-blems, nerve damage, anxiety and depression, stress, weight problem and fitness level, disrupted sleep, source of bacteria, attention span, social effect, text claw, indirect injuries, eyesight, hearing, and radiation. This study aimed to compare level of dependency between use of smart...

  8. Using mobile phones as acoustic sensors for high-throughput mosquito surveillance.

    Mukundarajan, Haripriya; Hol, Felix Jan Hein; Castillo, Erica Araceli; Newby, Cooper; Prakash, Manu

    2017-10-31

    The direct monitoring of mosquito populations in field settings is a crucial input for shaping appropriate and timely control measures for mosquito-borne diseases. Here, we demonstrate that commercially available mobile phones are a powerful tool for acoustically mapping mosquito species distributions worldwide. We show that even low-cost mobile phones with very basic functionality are capable of sensitively acquiring acoustic data on species-specific mosquito wingbeat sounds, while simultaneously recording the time and location of the human-mosquito encounter. We survey a wide range of medically important mosquito species, to quantitatively demonstrate how acoustic recordings supported by spatio-temporal metadata enable rapid, non-invasive species identification. As proof-of-concept, we carry out field demonstrations where minimally-trained users map local mosquitoes using their personal phones. Thus, we establish a new paradigm for mosquito surveillance that takes advantage of the existing global mobile network infrastructure, to enable continuous and large-scale data acquisition in resource-constrained areas.

  9. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.

    Heo, Cheon; Jang, Jongjin; Lee, Kyngjae; So, Byungchan; Lee, Kyungbae; Ko, Kwangse; Nam, Okhyun

    2017-01-01

    We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm²/V·s and 3.23 × 10¹³ cm⁻², respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.

  10. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.

    Lee, Hee Ho; Bae, Myunghan; Jo, Sung-Hyun; Shin, Jang-Kyoo; Son, Dong Hyeok; Won, Chul-Ho; Jeong, Hyun-Min; Lee, Jung-Hee; Kang, Shin-Won

    2015-07-28

    In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

  11. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

    Hee Ho Lee

    2015-07-01

    Full Text Available In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT-based biosensor for the detection of C-reactive protein (CRP using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

  12. Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

    Ma Xiao-Hua; Zhang Ya-Man; Chen Wei-Wei; Wang Xin-Hua; Yuan Ting-Ting; Pang Lei; Liu Xin-Yu

    2015-01-01

    In this paper, the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors (HEMTs), featuring a 50-nm and a 150-nm GaN thick channel layer, respectively, are compared. The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage (BV off ). Device simulation indicates that thickening the channel increases the drain-induced barrier lowering (DIBL) but reduces the lateral electric field in the channel and buffer underneath the gate. The increase of BV off in the thick channel device is due to the reduction of the electric field. These results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BV off in AlGaN/GaN HEMTs. (paper)

  13. Improved syntheses of high hole mobility phthalocyanines: A case of steric assistance in the cyclo-oligomerisation of phthalonitriles

    Daniel J. Tate

    2012-01-01

    Full Text Available It has been shown that the base-initiated cyclo-oligomerisation of phthalonitriles is favoured by bulky α-substituents making it possible to obtain the metal-free phthalocyanine directly and in high yield. The phthalocyanine with eight α-isoheptyl substituents gives a high time-of-flight hole mobility of 0.14 cm2·V−1·s−1 within the temperature range of the columnar hexagonal phase, that is 169–189 °C.

  14. Comparison of High-Flexion Fixed-Bearing and High-Flexion Mobile-Bearing Total Knee Arthroplasties-A Prospective Randomized Study.

    Kim, Young-Hoo; Park, Jang-Won; Kim, Jun-Shik

    2018-01-01

    There is none, to our knowledge, about comparison of high-flexion fixed-bearing and high-flexion mobile-bearing total knee arthroplasties (TKAs) in the same patients. The purpose of this study was to determine whether clinical results; radiographic and computed tomographic scan results; and the survival rate of a high-flexion mobile-bearing TKA is better than that of a high-flexion fixed-bearing TKA. The present study consisted of 92 patients (184 knees) who underwent same-day bilateral TKA. Of those, 17 were men and 75 were women. The mean age at the time of index arthroplasty was 61.5 ± 8.3 years (range 52-65 years). The mean body mass index was 26.2 ± 3.3 kg/m 2 (range 23-34 kg/m 2 ). The mean follow-up was 11.2 years (range 10-12 years). The Knee Society knee scores (93 vs 92 points; P = .531) and function scores (80 vs 80 points; P = 1.000), WOMAC scores (14 vs 15 points; P = .972), and UCLA activity scores (6 vs 6 points; P = 1.000) were not different between the 2 groups at 12 years follow-up. There were no differences in any radiographic and CT scan parameters between the 2 groups. Kaplan-Meier survivorship of the TKA component was 98% (95% confidence interval, 93-100) in the high-flexion fixed-bearing TKA group and 99% (95% confidence interval, 94-100) in the high-flexion mobile-bearing TKA group 12 years after the operation. We found no benefit to mobile-bearing TKA in terms of pain, function, radiographic and CT scan results, and survivorship. Longer-term follow-up is necessary to prove the benefit of the high-flexion mobile-bearing TKA over the high-flexion fixed-bearing TKA. Copyright © 2017 Elsevier Inc. All rights reserved.

  15. Implementation and Operational Research: Cost and Efficiency of a Hybrid Mobile Multidisease Testing Approach With High HIV Testing Coverage in East Africa.

    Chang, Wei; Chamie, Gabriel; Mwai, Daniel; Clark, Tamara D; Thirumurthy, Harsha; Charlebois, Edwin D; Petersen, Maya; Kabami, Jane; Ssemmondo, Emmanuel; Kadede, Kevin; Kwarisiima, Dalsone; Sang, Norton; Bukusi, Elizabeth A; Cohen, Craig R; Kamya, Moses; Havlir, Diane V; Kahn, James G

    2016-11-01

    In 2013-2014, we achieved 89% adult HIV testing coverage using a hybrid testing approach in 32 communities in Uganda and Kenya (SEARCH: NCT01864603). To inform scalability, we sought to determine: (1) overall cost and efficiency of this approach; and (2) costs associated with point-of-care (POC) CD4 testing, multidisease services, and community mobilization. We applied microcosting methods to estimate costs of population-wide HIV testing in 12 SEARCH trial communities. Main intervention components of the hybrid approach are census, multidisease community health campaigns (CHC), and home-based testing for CHC nonattendees. POC CD4 tests were provided for all HIV-infected participants. Data were extracted from expenditure records, activity registers, staff interviews, and time and motion logs. The mean cost per adult tested for HIV was $20.5 (range: $17.1-$32.1) (2014 US$), including a POC CD4 test at $16 per HIV+ person identified. Cost per adult tested for HIV was $13.8 at CHC vs. $31.7 by home-based testing. The cost per HIV+ adult identified was $231 ($87-$1245), with variability due mainly to HIV prevalence among persons tested (ie, HIV positivity rate). The marginal costs of multidisease testing at CHCs were $1.16/person for hypertension and diabetes, and $0.90 for malaria. Community mobilization constituted 15.3% of total costs. The hybrid testing approach achieved very high HIV testing coverage, with POC CD4, at costs similar to previously reported mobile, home-based, or venue-based HIV testing approaches in sub-Saharan Africa. By leveraging HIV infrastructure, multidisease services were offered at low marginal costs.

  16. P2 Asymmetry of Au's M-band Flux and its smoothing effect due to high-Z ablator dopants

    Li, Yongsheng; Zhai, Chuanlei; Ren, Guoli; Gu, Jianfa; Huo, Wenyi; Meng, Xujun; Ye, Wenhua; Lan, Ke; Zhang, Weiyan

    2017-10-01

    X-ray drive asymmetry is one of the main seeds of low-mode implosion asymmetry that blocks further improvement of the nuclear performance of ``high-foot'' experiments on the National Ignition Facility. More particularly, the P2 asymmetry of Au's M-band flux can also severely influence the implosion performance. Here we study the smoothing effect of mid- and/or high-Z dopants in ablator on M-band flux asymmetries, by modeling and comparing the implosion processes of a Ge-doped and a Si-doped ignition capsule driven by x-ray sources with asymmetric M-band flux. As the results, (1) mid- or high-Z dopants absorb M-band flux and re-emit isotropically, helping to smooth M-band flux arriving at the ablation front, therefore reducing the P2 asymmetries of the imploding shell and hot spot; (2) the smoothing effect of Ge-dopant is more remarkable than Si-dopant due to its higher opacity than the latter in Au's M-band; and (3) placing the doped layer at a larger radius in ablator is more efficient. Applying this effect may not be a main measure to reduce the low-mode implosion asymmetry, but might be of significance in some critical situations such as Inertial Confinement Fusion (ICF) experiments very near the performance cliffs of asymmetric x-ray drives.

  17. Behavior of surface residual stress in explosion hardened high manganese austenitic cast steel due to repeated impact loads

    Oda, Akira; Miyagawa, Hideaki

    1985-01-01

    Explosion hardened high manganese austenitic cast steel is being tried for rail crossing recently. From the previous studies, it became clear that high tensile residual stress was generated in the hardened surface layer by explosion and microcracks were observed. In this study, therefore, the behavior of surface residual stress in explosion hardened steel due to repeated impact loads was examined and compared with those of the original and shot peened steels. The results obtained are summarized as follows: (1) In the initial stage of the repetition of impact, high tensile surface residual stress in explosion hardened steel decreased rapidly with the repetition of impact, while those of the original and shot peened steels increased rapidly. This difference was attributed to the difference in depth of the work hardened layer in three testing materials. (2) Beyond 20 impacts the residual stress of three test specimens decreased gradually, and at more than 2000 impacts the compressive stress of about 500 MPa was produced regardless of the histories of working of testing materials. (3) The linear law in the second stage of residual stress fading was applicable to this case, and the range of the linear relationship was related to the depth of the work hardened layer of testing material. (4) From the changes in half-value breadth and peak intensity of diffraction X-ray, it was supposed that a peculiar microscopic strain exists in explosion hardened steel. (author)

  18. Hemolytic disease of newborn due to anti-Jk b in a woman with high risk pregnancy.

    Thakral, Beenu; Malhotra, Sheetal; Saluja, Karan; Kumar, Praveen; Marwaha, Neelam

    2010-08-01

    This case illustrates the importance of blood group antibodies in antenatal serology other than Rh system as a cause of hemolytic disease of newborn (HDN). In India, antenatal antibody screening is done at majority of transfusion centers in only Rh (D) negative mothers. In this multigravida woman with high risk obstetrical history, an antenatal antibody screening by indirect antiglobulin test (IAT) was not performed as she was Rh (D) positive. Postnatal work up for the pathological jaundice in the neonate revealed that red cell alloimmunization had occurred due to anti-Jk(b). We conclude that antenatal antibody screening should be done in all pregnant women irrespective of the D antigen status to detect and manage red cell alloimmunization to any other clinically significant blood group antigens. (c) 2010 Elsevier Ltd. All rights reserved.

  19. Estimation of thorium intake due to consumption of vegetables by inhabitants of high background radiation area by INAA

    Sathyapriya, R.S.; Suma Nair; Prabhath, R.K.; Madhu Nair; Rao, D.D.

    2012-01-01

    A study was conducted to estimate the thorium concentration in locally grown vegetables in high background radiation area (HBRA) of southern coastal regions of India. Locally grown vegetables were collected from HBRA of southern coastal regions of India. Thorium concentration was quantified using instrumental neutron activation analysis. The samples were irradiated at CIRUS reactor and counted using a 40% relative efficiency HPGe detector coupled to MCA. The annual intake of thorium was evaluated using the consumption data provided by National Nutrition Monitoring Board. The daily intake of 232 Th from the four food categories (green leafy vegetables, others vegetables, roots and tubers, and fruits) ranged between 0.27 and 5.352 mBq d -1 . The annual internal dose due to ingestion of thorium from these food categories was 46.8 x 10 -8 for female and 58.6 x 10 -8 Sv y -1 for male. (author)

  20. Families at financial risk due to high ratio of out-of-pocket health care expenditures to total income.

    Bennett, Kevin J; Dismuke, Clara E

    2010-05-01

    High out-of-pocket expenditures for health care can put individuals and families at financial risk. Several groups, including racial/ethnic minority groups, the uninsured, rural residents, and those in poorer health are at risk for this increased burden. The analysis utilized 2004-2005 MEPS data. The dependent variables were the out-of-pocket health care spending to total income ratios for total spending, office-based visits, and prescription drugs. Multivariate analyses with instrumental variables controlled for respondent characteristics. Gender, age, rurality, insurance coverage, health status, and health care utilization were all associated with higher out-of-pocket to income ratios. Certain groups, such as women, the elderly, those in poor health, and rural residents, are at a greater financial risk due to their higher out-of-pocket to total income spending ratios. Policymakers must be aware of these increased risks in order to provide adequate resources and targeted interventions to alleviate some of this burden.

  1. Soft Mobility and Urban Transformation

    Rosa Anna La Rocca

    2010-04-01

    Full Text Available This paper examines some European cases referred to promotion of soft mobility as a new lifestyle aimed to improve benefits on environment and urban liveability. Soft mobility includes any non-motorized transport (human powered mobility. According to this, soft mobility refers to pedestrian, bicycle, roller skate and skateboard transfers. It could be indented as “zeroimpact” mobility too. As a matter of fact, the words to define this way of moving have not been codified yet, therefore mobilitè douce, soft mobility, slow traffic are synonymous in referring mainly to pedestrians and cyclists to indicate alternative to car use. Soft mobility, indeed, can be defined as a special form of sustainable mobility able to optimize urban liveability, by keeping the individual right to move. At present, cities are engaged in defining policies, procedures and interventions to further “slow traffic”, both to relieve the traffic congestion, and to work for regeneration and environmental improvements. This asks for an in-depth cooperation between different political and administrative levels to achieve common objectives of development more attentive to environmental concerns. Despite this increasing attention, the idea of a “network” for soft mobility has not been yet achieved and the supply of integrated facilities and services as an alternative to the car use seems to be still difficult of accomplishment. High disparity characterizes European countries in promoting soft mobility: despite a prolific production of laws and roles referred to emergency of adopting alternative ways of moving to minimize negatives impacts (especially air and noise pollution as very threat to health due to car dependence for urban short distance too. And yet, soft mobility could represent a real occasion of urban and territorial regeneration aimed to rehabilitate some disused paths and routes (greenways. Some successful European cases show how it is possible to

  2. Molecular beam epitaxy growth of In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

    Ihn, Soo-Ghang; Jo, Seong June; Song, Jong-In

    2006-01-01

    We investigated the effects of high temperature (∼700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and δ-doping layers of an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties

  3. Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature

    Zhishuo Huang

    2016-08-01

    Full Text Available Neither of the two typical two-dimensional materials, graphene and single layer MoS 2 , are good enough for developing semiconductor logical devices. We calculated the electron mobility of 14 two-dimensional semiconductors with composition of MX 2 , where M (=Mo, W, Sn, Hf, Zr and Pt are transition metals, and Xs are S, Se and Te. We approximated the electron phonon scattering matrix by deformation potentials, within which long wave longitudinal acoustical and optical phonon scatterings were included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WS 2 , PtS 2 and PtSe 2 are promising for logical devices regarding the possible high electron mobility and finite band gap. Especially, the phonon limited electron mobility in PtSe 2 reaches about 4000 cm 2 ·V - 1 ·s - 1 at room temperature, which is the highest among the compounds with an indirect bandgap of about 1.25 eV under the local density approximation. Our results can be the first guide for experiments to synthesize better two-dimensional materials for future semiconductor devices.

  4. High level programming for the control of a tele operating mobile robot and with line following

    Bernal U, E.

    2006-01-01

    The TRASMAR automated vehicle was built with the purpose of transporting radioactive materials, it has a similar kinematic structure to that of a tricycle, in where the front wheel is the one in charge of offering the traction and direction, both rear wheels rotate freely and they are subject to a common axle. The electronic design was carried out being based on a MC68HC811 micro controller of the Motorola company. Of the characteristics that the robot possesses it stands out that it counts with an obstacle perception system through three ultrasonic sensors located in the front part of the vehicle to avoid collisions. The robot has two operation modes, the main mode is the manual, manipulated through a control by infrareds, although it can also move in autonomous way by means of the line pursuit technique using two reflective infrared sensors. As any other electronic system, the mobile robot required of improvements and upgrades. The modifications to be carried out were focused to the control stage. Its were intended as elements of upgrade the incorporation of the MC68HC912B32 micro controller and to replace the assembler language characteristic of this type of systems, by a high level language for micro controllers of this type, in this case the FORTH. In a same way it was implemented inside the program the function of the robot's displacement in an autonomous way by means of the line pursuit technique using control with fuzzy logic. The carried out work is distributed in the following way: In the chapter 1 the robot's characteristics are mentioned, as well as the objectives that thought about to the beginning of the project and the justifications that motivated the realization of this upgrade. In the chapters 2 at 5 are presented in a theoretical way the supports used for the the robot's upgrade, as the used modules of the micro controller, those main characteristics of the FORTH language, the theory of the fuzzy logic and the design of the stage of power that

  5. Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

    Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao [School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu (China)

    2017-10-15

    In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm{sup 2} V{sup -1} s{sup -1}, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE{sub V}) and conduction band offsets (ΔE{sub C}) were determined as 0.09 and 0.83 eV, respectively. The ΔE{sub C} was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE{sub C}, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

    Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao

    2017-01-01

    In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm"2 V"-"1 s"-"1, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE_V) and conduction band offsets (ΔE_C) were determined as 0.09 and 0.83 eV, respectively. The ΔE_C was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE_C, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Assessment of the Vibrations Effects Caused by Technical Seismicity Due to the Railway traffic on High-sensitivity Machinery

    Papán, Daniel; Valašková, Veronika; Demeterová, Katarína

    2016-10-01

    The numerical and experimental approach in structural dynamics problems is more and more current nowadays. This approach is applied and solved in many research and developing institutions of the all the world. Vibrations effect caused by passing trains used in manufacturing facilities can affect the quality of the production activity. This effect is possible to be solved by a numerical or an experimental way. Numerical solution is not so financially and time demanding. The main aim of this article is to focus on just experimental measurement of this problem. In this paper, the case study with measurement due to cramped conditions realized in situ is presented. The case study is located close to railway. The vibration effect caused by passing trains on the high-sensitivity machinery contained in this object were observed. The structure was a high-sensitivity machine that was placed in a construction process. For the measurements, the high-sensitivity standard vibrations equipment was used. The assessments of measurements’ results were performed for the technological conditions and Slovak Standard Criteria. Both of these assessments were divided to amplitude and frequency domain. The amplitude criterion is also divided to peak particle velocity and RMS (Root Mean Square). Frequency domain assessment were realised using the frequency response curves obtained from high-sensitivity machinery manufacturer. The frequency limits are established for each axis of triaxle system. The measurement results can be predicted if the vibration have to be reduced. Measurement implemented in the production hall should obtain materials to determine the seismic loading and response of production machinery caused by technical seismicity.

  8. Oxidative mobilization of cerium and uranium and enhanced release of "immobile" high field strength elements from igneous rocks in the presence of the biogenic siderophore desferrioxamine B

    Kraemer, Dennis; Kopf, Sebastian; Bau, Michael

    2015-09-01

    Polyvalent trace elements such as the high field strength elements (HFSE) are commonly considered rather immobile during low-temperature water-rock interaction. Hence, they have become diagnostic tools that are widely applied in geochemical studies. We present results of batch leaching experiments focused on the mobilization of certain HFSE (Y, Zr, Hf, Th, U and rare earth elements) from mafic, intermediate and felsic igneous rocks in the presence and absence, respectively, of the siderophore desferrioxamine B (DFOB). Our data show that DFOB strongly enhances the mobility of these trace elements during low-temperature water-rock interaction. The presence of DFOB produces two distinct features in the Rare Earths and Yttrium (REY) patterns of leaching solutions, regardless of the mineralogical and chemical composition or the texture of the rock type studied. Bulk rock-normalized REY patterns of leaching solutions with DFOB show (i) a very distinct positive Ce anomaly and (ii) depletion of La and other light REY relative to the middle REY, with a concave downward pattern between La and Sm. These features are not observed in experiments with hydrochloric acid, acetic acid or deionized water. In DFOB-bearing leaching solutions Ce and U are decoupled from and selectively enriched relative to light REY and Th, respectively, due to oxidation to Ce(IV) and U(VI). Oxidation of Ce3+ and U4+ is promoted by the significantly higher stability of the Ce(IV) and U(VI) DFOB complexes as compared to the Ce(III) and U(IV) DFOB complexes. This is similar to the relationship between the Ce(IV)- and Ce(III)-pentacarbonate complexes that cause positive Ce anomalies in alkaline lakes. However, while formation of Ce(IV) carbonate complexes is confined to alkaline environments, Ce(IV) DFOB complexes may produce positive Ce anomalies even in mildly acidic and near-neutral natural waters. Siderophore-promoted dissolution processes also significantly enhance mobility of other 'immobile' HFSE

  9. Whirlpool routing for mobility

    Lee, Jung Woo; Kusy, Branislav; Azim, Tahir; Shihada, Basem; Levis, Philip

    2010-01-01

    Using simulation, controlled testbeds, and real mobility experiments, we find that using the data plane for topology maintenance is highly effective due to the incremental nature of mobility updates. WARP leverages the fact that converging flows at a destination make the destination have the region of highest traffic. We provide a theoretical basis for WARP's behavior, defining an "update area" in which the topology must adjust when a destination moves. As long as packets arrive at a destination before it moves outside of the update area, WARP can repair the topology using the data plane. Compared to existing protocols, such as DYMO and HYPER, WARP's packet drop rate is up to 90% lower while sending up to 90% fewer packets.

  10. Fuel production from coal by the Mobil Oil process using nuclear high-temperature process heat

    Hoffmann, G.

    1982-01-01

    Two processes for the production of liquid hydrocarbons are presented: Direct conversion of coal into fuel (coal hydrogenation) and indirect conversion of coal into fuel (syngas production, methanol synthesis, Mobil Oil process). Both processes have several variants in which nuclear process heat may be used; in most cases, the nuclear heat is introduced in the gas production stage. The following gas production processes are compared: LURGI coal gasification process; steam reformer methanation, with and without coal hydrogasification and steam gasification of coal. (orig./EF) [de

  11. Towards high charge carrier mobilities by rational design of organic semiconductors

    Andrienko, Denis; Ruehle, Victor; Baumeier, Bjoern; Vehoff, Thorsten; Lukyanov, Alexander; Kremer, Kurt [Max Planck Institute for Polymer Research, Mainz (Germany); Marcon, Valentina [Technische Universitaet Darmstadt (Germany); Kirkpatrick, James; Nelson, Jenny [Imperial College London (United Kingdom); Lennartz, Christian [BASF AG, Ludwigshafen (Germany)

    2010-07-01

    The role of material morphology on charge carrier mobility in partially disordered organic semiconductors is discussed for several classes of materials: derivatives of hexabenzocoronenens, perylenediimides, triangularly-shaped polyaromatic hydrocarbons, and Alq{sub 3}. Simulations are performed using a package developed by Imperial College, London and Max Planck Institute for Polymer Research, Mainz (votca.org). This package combines several techniques into one scheme: quantum chemical methods for the calculation of molecular electronic structures and reorganization energies; molecular dynamics and systematic coarse-graining approaches for simulation of self-assembly and relative positions and orientations of molecules on large scales; kinetic Monte Carlo and master equation for studies of charge transport.

  12. On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes

    Emelianov, A. V., E-mail: emmsowton@gmail.com; Romashkin, A. V.; Tsarik, K. A. [National Research University of Electronic Technology (MIET) (Russian Federation); Nasibulin, A. G. [Skolkovo Institute of Science and Technology (Russian Federation); Nevolin, V. K.; Bobrinetskiy, I. I. [National Research University of Electronic Technology (MIET) (Russian Federation)

    2017-04-15

    This study is devoted to the fabrication of molecular semiconductor channels based on polymer molecules with nanoscale electrodes made of single-walled carbon nanotubes. A reproducible technology for forming nanoscale gaps in carbon nanotubes using a focused Ga{sup +} ion beam is proposed. Polyaniline molecules are deposited into nanogaps up to 30 nm wide between nanotubes by electrophoresis from N-methyl-2-pyrrolidone solution. As a result, molecular organic transistors are fabricated, in which the field effect is studied and the molecular-channel mobility is determined as 0.1 cm{sup 2}/(V s) at an on/off current ratio of 5 × 10{sup 2}.

  13. Suppression of Dyakonov-Perel Spin Relaxation in High-Mobility n-GaAs

    Dzhioev, R. I.; Kavokin, K. V.; Korenev, V. L.; Lazarev, M. V.; Poletaev, N. K.; Zakharchenya, B. P.; Stinaff, E. A.; Gammon, D.; Bracker, A. S.; Ware, M. E.

    2004-11-01

    We report a large and unexpected suppression of the free electron spin-relaxation in lightly doped n-GaAs bulk crystals. The spin-relaxation rate shows a weak mobility dependence and saturates at a level 30 times less than that predicted by the Dyakonov-Perel theory. The dynamics of the spin-orbit field differs substantially from the usual scheme: although all the experimental data can be self-consistently interpreted as a precessional spin-relaxation induced by a random spin-orbit field, the correlation time of this random field, surprisingly, is much shorter than, and is independent of, the momentum relaxation time determined from transport measurements.

  14. Underestimation of urinary albumin to creatinine ratio in morbidly obese subjects due to high urinary creatinine excretion.

    Guidone, Caterina; Gniuli, Donatella; Castagneto-Gissey, Lidia; Leccesi, Laura; Arrighi, Eugenio; Iaconelli, Amerigo; Mingrone, Geltrude

    2012-04-01

    Albuminuria, a chronic kidney and/or cardiovascular disease biomarker, is currently measured as albumin-to-creatinine ratio (ACR). We hypothesize that in severely obese individuals ACR might be abnormally low in spite of relatively high levels of urinary albumin due to increased creatininuria. One-hundred-eighty-four subjects were divided into tertiles based on their BMI. Fat-free mass (FFM) and fat-mass were assessed by DEXA; 24-h creatinine and albumin excretion, ACR, lipid profile and blood pressure were measured. Twenty-four-hour creatinine highly correlated (R = 0.75) with FFM. Since both creatininuria and albuminuria increased with the BMI, being the increase in creatininuria preponderant in subjects with BMI>35, their ratio (AC-ratio) did not change significantly from that of subjects in the lower BMI tertile. ACR only correlated with the systolic blood pressure, while both albuminuria and cretininuria correlated (P = 0.01) with the absolute 10-year CHD risk. In subjects with BMI>35, 100 mg of albumin excreted with urine increased the CHD risk of 2%. Albumin-to-creatinine ratio is underestimated in severely obese individuals as a consequence of the large creatininuria, which is proportional to the increased FFM. Therefore, at least in this population 24-h albuminuria should be more reliable than ACR. Copyright © 2011 Elsevier Ltd and European Society for Clinical Nutrition and Metabolism. All rights reserved.

  15. Evidence of high-field radio-frequency hot spots due to trapped vortices in niobium cavities

    G. Ciovati

    2008-12-01

    Full Text Available Superconducting radio-frequency (rf cavities made of high-purity niobium exhibit strong anomalous rf losses starting at peak surface magnetic fields of about 90–100 mT in the gigahertz range. This phenomenon is referred to as “Q drop.” Temperature maps of the cavity surface have revealed the presence of “hot spots” in the high magnetic field region of the cavities. Several models have been proposed over the years to explain this phenomenon but there is still no experimental evidence on the mechanisms behind such hot spots. In this work we show that at least some of the hot spots are due to trapped vortices responsible for the anomalous losses. Here we report experiments in which a local thermal gradient was applied to the hot spot regions of a cavity in order to displace the vortices. Temperature maps measured before and after applying the thermal gradient unambiguously show that the hot spots do move and change their intensities, allowing us to determine changes in the hot spot positions and strengths and their effect on the cavity performance. Results on a large-grain niobium cavity clearly show a different distribution and in some cases a weakening of the intensity of the “hot spots,” suggesting new ways of improving the cavity performance without additional material treatments.

  16. Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

    Lucovsky, G.; Fulton, C.C.; Zhang, Y.; Luning, J.; Edge, L.; Whitten, J.L.; Nemanich, R.J.; Schlom, D.G.; Afanase'v, V.V.

    2005-01-01

    X-ray absorption spectroscopy (XAS) is used to study conduction band edge electronic structure of high-k transition metal (TM) and trivalent lanthanide series rare earth (RE) oxide dielectrics. Empty TM/RE d-states are studied by intra-atomic transitions originating in core level spin-orbit split p-states, and conduction band states are studied in inter-atomic transitions which originate in the oxygen atom 1s core level state. In non-crystalline Zr and Hf silicate alloys, the local bonding symmetry, or crystal field splits these d-states into doubly and triply degenerate features. In nano-crystalline oxides, there are additional d-state splittings due to contributions of more distant neighbors that completely remove d-state degeneracies via the Jahn-Teller effect mechanism. This gives rise to highly localized band edge states that are electronically active in photoconductivity, internal photoemission, and act as bulk traps in metal oxide semiconductor (MOS) devices

  17. Maxwell-Cattaneo Heat Convection and Thermal Stresses Responses of a Semi-Infinite Medium to High-Speed Laser Heating due to High Speed Laser Heating

    Abdallah I. A.

    2009-07-01

    Full Text Available Based on Maxwell-Cattaneo convection equation, the thermoelasticity problem is in- vestigated in this paper. The analytic solution of a boundary value problem for a semi- infinite medium with traction free surface heated by a high-speed laser-pulses have Dirac temporal profile is solved. The temperature, the displacement and the stresses distributions are obtained analytically using the Laplace transformation, and discussed at small time duration of the laser pulses. A numerical study for Cu as a target is performed. The results are presented graphically. The obtained results indicate that the small time duration of the laser pulses has no e ect on the finite velocity of the heat con- ductivity, but the behavior of the stress and the displacement distribution are affected due to the pulsed heating process and due to the structure of the governing equations.

  18. Use of high metal-containing biogas digestates in cereal production - Mobility of chromium and aluminium.

    Dragicevic, Ivan; Eich-Greatorex, Susanne; Sogn, Trine A; Horn, Svein J; Krogstad, Tore

    2018-07-01

    Biogas digestate use as organic fertilizer has been widely promoted in recent years as a part of the global agenda on recycling waste and new sustainable energy production. Although many studies have confirmed positive effects of digestates on soil fertility, there is still lack of information on the potential adverse effects of digestates on natural soil heavy metal content, metal leaching and leaching of other pollutants. We have investigated the release of aluminium (Al) and chromium (Cr) from different soils treated with commercial digestates high in mentioned potentially problematic metals in a field experiment, while a greenhouse and a laboratory column experiment were used to address mobility of these metals in two other scenarios. Results obtained from the field experiment showed an increase in total concentrations for both investigated metals on plots treated with digestates as well as a significant increase of water-soluble Al concentrations. Factors that were found to be mostly affecting the metal mobility were dissolved organic carbon (DOC), pH and type of soil. Metal binding and free metal concentrations were modelled using the WHAM 7.0 software. Results indicated that the use of digestates with high metal content are comparable to use of animal manure with respect to metal leaching. Data obtained through chemical modelling for the samples from the field experiment suggested that an environmental risk from higher metal mobility has to be considered for Al. In the greenhouse experiment, measured concentrations of leached Cr at the end of the growing season were low for all treatments, while the concentration of leached Al from digestates was higher. The high irrigation column leaching experiment showed an increased leaching rate of Cr with addition of digestates. Copyright © 2018 Elsevier Ltd. All rights reserved.

  19. Shock-induced heating and millisecond boiling in gels and tissue due to high intensity focused ultrasound

    Canney, Michael S.; Khokhlova, Vera A.; Bessonova, Olga V.; Bailey, Michael R.; Crum, Lawrence A.

    2009-01-01

    Nonlinear propagation causes high intensity ultrasound waves to distort and generate higher harmonics, which are more readily absorbed and converted to heat than the fundamental frequency. Although such nonlinear effects have previously been investigated and found not to significantly alter high intensity focused ultrasound (HIFU) treatments, two results reported here change this paradigm. One is that at clinically relevant intensity levels, HIFU waves not only become distorted but form shock waves in tissue. The other is that the generated shock waves heat the tissue to boiling in much less time than predicted for undistorted or weakly distorted waves. In this study, a 2-MHz HIFU source operating at peak intensities up to 25,000 W/cm2 was used to heat transparent tissue-mimicking phantoms and ex vivo bovine liver samples. Initiation of boiling was detected using high-speed photography, a 20-MHz passive cavitation detector, and fluctuation of the drive voltage at the HIFU source. The time to boil obtained experimentally was used to quantify heating rates and was compared to calculations using weak shock theory and the shock amplitudes obtained from nonlinear modeling and from measurements with a fiber optic hydrophone. As observed experimentally and predicted by calculations, shocked focal waveforms produced boiling in as little as 3 ms and the time to initiate boiling was sensitive to small changes in HIFU output. Nonlinear heating due to shock waves is therefore important to HIFU and clinicians should be aware of the potential for very rapid boiling since it alters treatments. PMID:20018433

  20. Minimizing Redundant Messages and Improving Search Efficiency under Highly Dynamic Mobile P2P Network

    Ajay Arunachalam

    2016-02-01

    Full Text Available Resource Searching is one of the key functional tasks in large complex networks. With the P2P architecture, millions of peers connect together instantly building a communication pattern. Searching in mobile networks faces additional limitations and challenges. Flooding technique can cope up with the churn and searches aggressively by visiting almost all the nodes. But it exponentially increases the network traffic and thus does not scale well. Further the duplicated query messages consume extra battery power and network bandwidth. The blind flooding also suffers from long delay problem in P2P networks. In this paper, we propose optimal density based flooding resource discovery schemes. Our first model takes into account local graph topology information to supplement the resource discovery process while in our extended version we also consider the neighboring node topology information along with the local node information to further effectively use the mobile and network resources. Our proposed method reduces collision at the same time minimizes effect of redundant messages and failures. Overall the methods reduce network overhead, battery power consumption, query delay, routing load, MAC load and bandwidth usage while also achieving good success rate in comparison to the other techniques. We also perform a comprehensive analysis of the resource discovery schemes to verify the impact of varying node speed and different network conditions.