WorldWideScience

Sample records for high ic film

  1. Droplet-Wall/Film Impact in IC Engine Applications

    Science.gov (United States)

    2017-08-14

    Report: Droplet-Wall/ Film Impact in IC Engine Applications (ARO Topic 1.4.1 under ARO’s Dr. Ralph A. Anthenien) The views, opinions and/or findings...Participants: RPPR Final Report as of 12-Oct-2017 Agreement Number: W911NF-16-1-0449 Organization: Princeton University Title: Droplet-Wall/ Film Impact...droplets impacting a wet surface under various film thickness, which plays a critical role in controlling the efficiency of applications such as those

  2. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

    Science.gov (United States)

    Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

    2017-04-25

    Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

  3. Eddy current measurement of the thickness of top Cu film of the multilayer interconnects in the integrated circuit (IC) manufacturing process

    Science.gov (United States)

    Qu, Zilian; Meng, Yonggang; Zhao, Qian

    2015-03-01

    This paper proposes a new eddy current method, named equivalent unit method (EUM), for the thickness measurement of the top copper film of multilayer interconnects in the chemical mechanical polishing (CMP) process, which is an important step in the integrated circuit (IC) manufacturing. The influence of the underneath circuit layers on the eddy current is modeled and treated as an equivalent film thickness. By subtracting this equivalent film component, the accuracy of the thickness measurement of the top copper layer with an eddy current sensor is improved and the absolute error is 3 nm for sampler measurement.

  4. Improved thermal stability of polylactic acid (PLA) composite film via PLA-β-cyclodextrin-inclusion complex systems.

    Science.gov (United States)

    Byun, Youngjae; Rodriguez, Katia; Han, Jung H; Kim, Young Teck

    2015-11-01

    The effects of the incorporation of PLA-β-cyclodextrin-inclusion complex (IC) and β-cyclodextrin (β-CD) on biopolyester PLA films were investigated. Thermal stability, surface morphology, barrier, and mechanical properties of the films were measured at varying IC (1, 3, 5, and 7%) and β-CD (1 and 5%) concentrations. The PLA-IC-composite films (IC-PLA-CFs) showed uniform morphological structure, while samples containing β-CD (β-CD-PLA-CFs) showed high agglomeration of β-CD due to poor interfacial interaction between β-CD and PLA moieties. According to the thermal property analysis, the 5% IC-PLA-CFs showed 6.6 times lower dimensional changes (6.5%) at the temperature range of 20-80°C than that of pure PLA film (43.0%). The increase of IC or β-CD content in the PLA-composite films shifted the glass transition and crystallization temperature to higher temperature regions. The crystallinity of both composite films improved by increasing IC or β-CD content. Both composite films had higher oxygen and water vapor permeability as IC or β-CD content increased in comparison to pure PLA film. All the composite films had less flexibility and lower tensile strength than the pure PLA film. In conclusion, this study shows that the IC technique is valuable to improve the thermal expansion stability of PLA-based films. Published by Elsevier B.V.

  5. Water saving in IC wafer washing process; IC wafer senjo deno sessui taisaku

    Energy Technology Data Exchange (ETDEWEB)

    Harada, H. [Mitsubishi Corp., Tokyo (Japan); Araki, M.; Nakazawa, T.

    1997-11-30

    This paper reports features of a wafer washing technology, a new IC wafer washing process, its pure water saving effect, and a `QC washing` which has pure water saving effect in the wafer washing. Wafer washing processes generally include the SC1 process (using ammonia + hydrogen peroxide aqueous solution) purposed for removing contamination due to ultrafine particles, the SC2 process (using hydrochloric acid + hydrogen peroxide aqueous solution) purposed for removing contamination due to heavy metals, the piranha washing process (using hot sulfuric acid + hydrogen peroxide aqueous solution) purposed for removing contamination due to organic matters, and the DHF (using dilute hydrofluoric acid) purposed for removing natural oxide films. Natural oxide films are now remained as surface protection films, by which surface contamination has been reduced remarkably. A high-temperature washing chemical circulating and filtering technology developed in Japan has brought about a reform in wafer washing processes having been used previously. Spin washing is used as a water saving measure, in which washing chemicals or pure water are sprayed onto one each of wafers which is spin-rotated, allowing washing and rinsing to be made with small amount of washing chemicals and pure water. The QC washing is a method to replace tank interior with pure was as quick as possible in order to increase the rinsing effect. 7 refs., 5 figs.

  6. PTF 12gzk—A rapidly declining, high-velocity type Ic radio supernova

    Energy Technology Data Exchange (ETDEWEB)

    Horesh, Assaf; Kulkarni, Shrinivas R. [Cahill Center for Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Corsi, Alessandra [Department of Physics, The George Washington University, 725 21st Street, NW, Washington, DC 20052 (United States); Frail, Dale A. [National Radio Astronomy Observatory, P.O. Box 0, Socorro, NM 87801 (United States); Cenko, S. Bradley [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Ben-Ami, Sagi; Gal-Yam, Avishay; Yaron, Ofer; Arcavi, Iair; Ofek, Eran O. [Department of Particle Physics and Astrophysics, The Weizmann Institute of Science, Rehovot 76100 (Israel); Kasliwal, Mansi M. [Carnegie Institution for Science, Department of Terrestrial Magnetism, 5241 Broad Branch Road, Washington, DC 20008 (United States)

    2013-11-20

    Only a few cases of Type Ic supernovae (SNe) with high-velocity ejecta (≥0.2 c) have been discovered and studied. Here, we present our analysis of radio and X-ray observations of the Type Ic SN PTF 12gzk. The radio emission declined less than 10 days after explosion, suggesting SN ejecta expanding at high velocity (∼0.3 c). The radio data also indicate that the density of the circumstellar material (CSM) around the supernova is lower by a factor of ∼10 than the CSM around normal Type Ic SNe. PTF 12gzk may therefore be an intermediate event between a 'normal' SN Ic and a gamma-ray-burst-SN-like event. Our observations of this rapidly declining radio SN at a distance of 58 Mpc demonstrates the potential to detect many additional radio SNe, given the new capabilities of the Very Large Array (improved sensitivity and dynamic scheduling), which are currently missed, leading to a biased view of radio SNe Ic. Early optical discovery followed by rapid radio observations would provide a full description of the ejecta velocity distribution and CSM densities around stripped massive star explosions as well as strong clues about the nature of their progenitor stars.

  7. PTF 12gzk—A rapidly declining, high-velocity type Ic radio supernova

    International Nuclear Information System (INIS)

    Horesh, Assaf; Kulkarni, Shrinivas R.; Corsi, Alessandra; Frail, Dale A.; Cenko, S. Bradley; Ben-Ami, Sagi; Gal-Yam, Avishay; Yaron, Ofer; Arcavi, Iair; Ofek, Eran O.; Kasliwal, Mansi M.

    2013-01-01

    Only a few cases of Type Ic supernovae (SNe) with high-velocity ejecta (≥0.2 c) have been discovered and studied. Here, we present our analysis of radio and X-ray observations of the Type Ic SN PTF 12gzk. The radio emission declined less than 10 days after explosion, suggesting SN ejecta expanding at high velocity (∼0.3 c). The radio data also indicate that the density of the circumstellar material (CSM) around the supernova is lower by a factor of ∼10 than the CSM around normal Type Ic SNe. PTF 12gzk may therefore be an intermediate event between a 'normal' SN Ic and a gamma-ray-burst-SN-like event. Our observations of this rapidly declining radio SN at a distance of 58 Mpc demonstrates the potential to detect many additional radio SNe, given the new capabilities of the Very Large Array (improved sensitivity and dynamic scheduling), which are currently missed, leading to a biased view of radio SNe Ic. Early optical discovery followed by rapid radio observations would provide a full description of the ejecta velocity distribution and CSM densities around stripped massive star explosions as well as strong clues about the nature of their progenitor stars.

  8. High energy ion implantation for IC processing

    International Nuclear Information System (INIS)

    Oosterhoff, S.

    1986-01-01

    In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 10 13 /cm 2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

  9. Performance of Naturally Aspirating IC Engines Operating at High ...

    African Journals Online (AJOL)

    The loss of power and the increase of fuel consumption of naturally aspirating IC engines operating with low atmospheric pressure at high altitude as well as changes in the mixture quality with non adapting mixture formation systems are principally known. Other effects like the additional advance of ignition timing in petrol ...

  10. Optical investigation of the interaction of an automotive spray and thin films by utilization of a high-pressure spin coater

    Science.gov (United States)

    Seel, Kevin; Reddemann, Manuel A.; Kneer, Reinhold

    2018-03-01

    Although the interaction of automotive sprays with thin films is of high technical relevance for IC engine applications, fundamental knowledge about underlying physical mechanisms is still limited. This work presents a systematic study of the influence of the film's initial thickness—homogeneously spread over a flat wall before the initial spray impingement—on film surface structures and thickness after the interaction. For this purpose, interferometric film thickness measurements and complementary high-speed visualizations are used. By gradually increasing the initial film thickness on a micrometer scale, a shift from a regime of liquid deposition (increasing film thickness with respect to initial film thickness) to a regime of liquid removal (decreasing film thickness with respect to initial film thickness) is observed at the stagnation zone of the impinging spray. This transition is accompanied by the formation of radially propagating surface waves, transporting liquid away from the stagnation zone. Wavelengths and amplitudes of the surface waves are increased with increasing initial film thickness.

  11. Temperature behavior of electrical properties of high-k lead-magnesium-niobium titanate thin-films

    Energy Technology Data Exchange (ETDEWEB)

    Chen Wenbin, E-mail: cwb0201@163.com [Electromechanical Engineering College, Guilin University of Electronic Technology (China); McCarthy, Kevin G. [Department of Electrical and Electronic Engineering, University College Cork (Ireland); Copuroglu, Mehmet; O' Brien, Shane; Winfield, Richard; Mathewson, Alan [Tyndall National Institute, University College Cork (Ireland)

    2012-05-01

    This paper reports on the temperature dependence of the electrical properties of high-k lead-magnesium-niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 Degree-Sign C and 750 Degree-Sign C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.

  12. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    International Nuclear Information System (INIS)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu; Gong, Lijun; He, Wei

    2017-01-01

    Highlights: • Air atmosphere plasmacould generatehydrophilic groups of photo-resistive film. • Better wettability of photo-resistive filmled tohigher plating uniformity of copper pillars. • New flow isreduced cost, simplified process and elevated productivity. - Abstract: The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O_2−CF_4 low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of C−O, O−C=O, C=O and −NO_2 by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  13. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gong, Lijun [Research and Development Department, Guangzhou Fastprint Circuit Tech Co., Ltd., Guangzhou 510663 (China); He, Wei, E-mail: heweiz@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Research and Development Department, Guangdong Guanghua Sci-Tech Co., Ltd., Shantou 515000 (China)

    2017-07-31

    Highlights: • Air atmosphere plasmacould generatehydrophilic groups of photo-resistive film. • Better wettability of photo-resistive filmled tohigher plating uniformity of copper pillars. • New flow isreduced cost, simplified process and elevated productivity. - Abstract: The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O{sub 2}−CF{sub 4} low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of C−O, O−C=O, C=O and −NO{sub 2} by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  14. The Implications Related to Different IC, Different Projects and Different Thinking Addressing the Common Core of IC

    DEFF Research Database (Denmark)

    Lindgren, Peter; Saghaug, Kristin Margrethe

    2009-01-01

    challenge the development of IC: - The IC at the organizational level seems to diminish when innovation gets highly dispersed and is operated outside the core of the organization - The attractiveness of the organization to different ICA, which is one fundament to sustainable and successful innovation, seems...... to fall when the IC at the organizational core level diminishes The objective of this paper is therefore to understand 1) How the IC at the organizational core level may continue to be developed, when at the same time innovation is taking place in dispersed groups and projects. 2) How to motivate...... the different ICA´s to bring learning and knowledge back to the core with the purpose to develop IC at the organizational core level....

  15. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    Science.gov (United States)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu; Gong, Lijun; He, Wei

    2017-07-01

    The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O2sbnd CF4 low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of Csbnd O, Osbnd Cdbnd O, Cdbnd O and sbnd NO2 by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  16. Electronic States of IC60BA and PC71BM

    International Nuclear Information System (INIS)

    Sheng Chun-Qi; Wang Peng; Shen Ying; Li Wen-Jie; Li Hong-Nian; Zhang Wen-Hua; Zhu Jun-Fa; Lai Guo-Qiao

    2013-01-01

    We investigate the electronic states of IC 60 BA and PC 71 BM using first-principles calculations and photoelectron spectroscopy (PES) measurements. The energy level structures for all possible isomers are reported and compared with those of C 60 , C 70 and PC 61 BM. The attachment of the side chains can raise the LUMO energies and decrease the HOMO-LUMO gaps, and thus helps to increase the power-conversion efficiency of bulk heterojunction solar cells. In the PES studies, we prepared IC 60 BA and PC 71 BM films on Si:H(111) substrates to construct adsorbate/substrate interfaces describable with the integer charge-transfer (ICT) model. Successful measurements then revealed that one of the most important material properties for an electron acceptor, the energy of the negative integer charge-transfer state (E ICT− ), is 4.31 eV below the vacuum level for PC 71 BM. The E ICT− of IC 60 BA is smaller than 4.14 eV

  17. Study of a Particle Based Films Cure Process by High-Frequency Eddy Current Spectroscopy

    Directory of Open Access Journals (Sweden)

    Iryna Patsora

    2016-12-01

    Full Text Available Particle-based films are today an important part of various designs and they are implemented in structures as conductive parts, i.e., conductive paste printing in the manufacture of Li-ion batteries, solar cells or resistive paste printing in IC. Recently, particle based films were also implemented in the 3D printing technique, and are particularly important for use in aircraft, wind power, and the automotive industry when incorporated onto the surface of composite structures for protection against damages caused by a lightning strike. A crucial issue for the lightning protection area is to realize films with high homogeneity of electrical resistance where an in-situ noninvasive method has to be elaborated for quality monitoring to avoid undesirable financial and time costs. In this work the drying process of particle based films was investigated by high-frequency eddy current (HFEC spectroscopy in order to work out an automated in-situ quality monitoring method with a focus on the electrical resistance of the films. Different types of particle based films deposited on dielectric and carbon fiber reinforced plastic substrates were investigated in the present study and results show that the HFEC method offers a good opportunity to monitor the overall drying process of particle based films. Based on that, an algorithm was developed, allowing prediction of the final electrical resistance of the particle based films throughout the drying process, and was successfully implemented in a prototype system based on the EddyCus® HFEC device platform presented in this work. This prototype is the first solution for a portable system allowing HFEC measurement on huge and uneven surfaces.

  18. Mod 1 ICS TI Report: ICS Conversion of a 140% HPGe Detector

    Energy Technology Data Exchange (ETDEWEB)

    Bounds, John Alan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-07-05

    This report evaluates the Mod 1 ICS, an electrically cooled 140% HPGe detector. It is a custom version of the ORTEC Integrated Cooling System (ICS) modified to make it more practical for us to use in the field. Performance and operating characteristics of the Mod 1 ICS are documented, noting both pros and cons. The Mod 1 ICS is deemed a success. Recommendations for a Mod 2 ICS, a true field prototype, are provided.

  19. Y1Ba2Cu3O(7-delta) thin film dc SQUIDs (superconducting quantum interference device)

    Science.gov (United States)

    Racah, Daniel

    1991-03-01

    Direct current superconducting quantum interferometers (SQUIDs) based on HTSC thin films have been measured and characterized. The thin films used were of different quality: (1) Granular films on Sapphire substrates, prepared either by e-gun evaporation, by laser ablation or by MOCVD (metal oxide chemical vapor deposition), (2) Epitaxial films on MgO substrates. Modulations of the voltage on the SQUIDs as a function of the applied flux have been observed in a wide range of temperatures. The nature of the modulation was found to be strongly dependent on the morphology of the film and on its critical current. The SQUIDs based on granular films were relatively noisy, hysteretic and with a complicated V-phi shape. Those devices based on low quality (lowIc) granular films could be measured only at low temperatures (much lower than 77 K). While those of higher quality (granular films with high Ic) could be measured near to the superconductive transition. The SQUID based on high quality epitaxial film was measured near Tc and showed an anomalous, time dependent behavior.

  20. Micro-structuring of thick NdFeB films using high-power plasma etching for magnetic MEMS application

    International Nuclear Information System (INIS)

    Jiang, Yonggang; Fujita, Takayuki; Higuchi, Kohei; Maenaka, Kazusuke; Masaoka, Shingo; Uehara, Minoru

    2011-01-01

    This paper describes the micro-patterning of thick NdFeB magnetic films using a high-power plasma etching method. The effects of RF bias power and gas composition on the selectivity and etching rate are experimentally studied. A maximum etching rate of 60 nm min −1 is achieved with an inductively coupled plasma power of 500 W and a RF bias power of 200 W. A maximum selectivity of 0.26 between hard baked AZP4903 photoresist and NdFeB magnetic films is achieved when volumetric Cl 2 concentration is 2.5%. NdFeB micro-magnets as thick as 4.2 µm are achieved by using AZP4903 photoresist. Magnetic film as thick as 10 µm can be patterned by using SU-8 photoresist with a thickness of 100 µm as the mask. The magnetic property of patterned microstructures is characterized using a vibrating sample magnetometer and the magnetic field distribution is measured using a Hall effect sensor IC. The characterization results indicate that the patterned magnetic microstructures have a high magnetic remanance of 1.0 T, which is comparable to that of the non-patterned NdFeB films.

  1. High-precision analog circuit technology for power supply integrated circuits; Dengen IC yo koseido anarogu kairo gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Nakamori, A.; Suzuki, T.; Mizoe, K. [Fuji Electric Corporate Research and Development,Ltd., Kanagawa (Japan)

    2000-08-10

    With the recent rapid spread of portable electronic appliances, specification requirements such as compact power supply and long operation with batteries have become severer. Power supply ICs (integrated circuits) are required to reduce power consumption in the circuit and perform high-precision control. To meet these requirements, Fuji Electric develops high-precision CMOS (complementary metal-oxide semiconductor) analog technology. This paper describes three analog circuit technologies of a voltage reference, an operational amplifier and a comparator as circuit components particularly important for the precision of power supply ICs. (author)

  2. Children and IC

    Science.gov (United States)

    ... Cola, and Orange Crush, for example), Kool-Aid, chocolate, and many fruits, fruit juices and drinks (including ... Guideline IC Treatments IC Diet & Self Management Physical Therapy Antidepressants Antihistamines Pentosan Polysulfate Sodium Bladder Instillations Immunosuppresants ...

  3. Men and IC

    Science.gov (United States)

    ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ...

  4. General IC Symptoms

    Science.gov (United States)

    ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ...

  5. Pregnancy and IC

    Science.gov (United States)

    ... have not already done so, try to identify foods, beverages, and supplements that are irritating to your bladder ... Other Medicines Over-the-counter Medicines Pain Management Management of IC ... Diet Food Diaries Least and Most Bothersome Foods IC-Friendly ...

  6. The response of Kodak EDR2 film in high-energy electron beams.

    Science.gov (United States)

    Gerbi, Bruce J; Dimitroyannis, Dimitri A

    2003-10-01

    Kodak XV2 film has been a key dosimeter in radiation therapy for many years. The advantages of the recently introduced Kodak EDR2 film for photon beam dosimetry have been the focus of several IMRT verification dosimetry publications. However, no description of this film's response to electron beams exists in the literature. We initiated a study to characterize the response and utility of this film for electron beam dosimetry. We exposed a series of EDR2 films to 6, 9, 12, 16, and 20 MeV electrons in addition to 6 and 18 MV x rays to develop standard characteristic curves. The linac was first calibrated to ensure that the delivered dose was known accurately. All irradiations were done at dmax in polystyrene for both photons and electrons, all films were from the same batch, and were developed at the same time. We also exposed the EDR2 films in a solid water phantom to produce central axis depth dose curves. These data were compared against percent depth dose curves measured in a water phantom using an IC-10 ion chamber, Kodak XV2 film, and a PTW electron diode. The response of this film was the same for both 6 and 18 MV x rays, but showed an apparent energy-dependent enhancement for electron beams. The response of the film also increased with increasing electron energy. This caused the percent depth dose curves using film to be shifted toward the surface compared to the ion chamber data.

  7. A heating and diffusion barrier based on TaSiN x for miniaturized IC devices

    International Nuclear Information System (INIS)

    Cheng, H.-Y.; Chen, Y.-C.; Lee, C.-M.; Wang, S.-H.; Chin, T.-S.

    2006-01-01

    Highly resistive TaSiN x films investigated as candidates for heating and diffusion-barrier layers for miniaturized IC devices such as a sensor or a phases-change random access memory (PCRAM). The obtained resistivity, between 0.069-1.21 Ω cm, increases with increasing nitrogen content up to 52.83%, and fulfills the requirements as a suitable heating layer. All the as-deposited films were amorphous, and the films with substantial nitrogen content showed excellent thermal stability The amorphous structure had a very smooth surface which was stable at temperatures up to 800 deg. C. In addition to its heating capability, the amorphous structure with no grain boundaries was found to also act as a good diffusion barrier effect in contact with a tungsten electrode as determined by AES an TEM analysis. The barrier effect was evaluated by an annealing at 500 and 600 deg. C in Ar atmosphere for 30 min, respectively. The highly resistive TaSiN x heating layer successfully obstructed the diffusion of tungsten atoms from the W electrodes even when the layer was only 10 nm thick. With increasing N content, the heating and diffusion-barrier layer for PCRAM was proposed as a typical example of many potential applications

  8. Abundances of Planetary Nebulae IC 418, IC 2165 and NGC 5882

    NARCIS (Netherlands)

    Pottasch, [No Value; Bernard-Salas, J; Beintema, DA; Feibelman, WA

    The ISO and IUE spectra of the elliptical nebulae NGC 5882, IC 418 and IC 2165 are presented. These spectra are combined with the spectra in the visual wavelength region to obtain a complete, extinction corrected, spectrum. The chemical composition of the nebulae is then calculated and compared to

  9. Simplified design of IC amplifiers

    CERN Document Server

    Lenk, John

    1996-01-01

    Simplified Design of IC Amplifiers has something for everyone involved in electronics. No matter what skill level, this book shows how to design and experiment with IC amplifiers. For experimenters, students, and serious hobbyists, this book provides sufficient information to design and build IC amplifier circuits from 'scratch'. For working engineers who design amplifier circuits or select IC amplifiers, the book provides a variety of circuit configurations to make designing easier.Provides basics for all phases of practical design.Covers the most popular forms for amplif

  10. Multilayer Integrated Film Bulk Acoustic Resonators

    CERN Document Server

    Zhang, Yafei

    2013-01-01

    Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education’s Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang’s research group.

  11. IC Treatment: Surgical Procedures

    Science.gov (United States)

    ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ...

  12. IC: Frequently Asked Questions

    Science.gov (United States)

    ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ...

  13. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  14. High Ic, YBa2Cu3O7-x films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO3 buffers

    International Nuclear Information System (INIS)

    Kursumovic, A; Durrell, J H; Harrington, S; Wimbush, S; MacManus-Driscoll, J L; Maiorov, B; Zhou, H; Stan, L; Holesinger, T G; Wang, H

    2009-01-01

    YBa 2 Cu 3 O 7-x (YBCO) thick films were grown by hybrid liquid phase epitaxy (HLPE) on (001) SrTiO 3 (STO) substrates. In the presence of a 100 nm thick, 5 mol% Au-doped STO buffer, self-field critical current densities, J c sf , at 77 K of ∼2.4 MA cm -2 and critical currents, I c sf , up to 700 A (cm-width) -1 were achieved. The J c value is virtually independent of thickness and the growth rates are very high (∼1 μm min -1 ). From transmission electron microscopy (TEM), Y 2 O 3 nanocloud extended defects (∼100 nm in size) were identified as the pinning defects in the films. Enhanced random pinning was induced by the presence of Au in the buffer.

  15. Magnetic properties of electroplated nano/microgranular NiFe thin films for rf application

    NARCIS (Netherlands)

    Zhuang, Y.; Vroubel, M.; Rejaei, B.; Burghartz, J.N.; Attenborough, K.

    2005-01-01

    A granular NiFe thin film with large in-plane magnetic anisotropy and high ferromagnetic-resonance frequency developed for radio-frequency integrated circuit (IC) applications is presented. During the deposition, three-dimensional (3D) growth occurs, yielding NiFe grains (? ? 1.0??m). Nanonuclei (?

  16. Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

    DEFF Research Database (Denmark)

    Godin, Jean; Nodjiadjim, V.; Riet, Muriel

    2008-01-01

    We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Vari...... applications of interest....

  17. LD to IC

    CERN Multimedia

    Association du personnel

    2010-01-01

    LC to IC – Publication of posts: Following the publication of new LD to IC posts, we regret that a large number of post descriptions are not available in both CERN official languages, English and French. Consequently, the Staff Association has decided to provide assistance to those who need it with the translation of one or more posts of interest. To do this, please contact the Staff Association secretariat, tel. 72819 or 72761 or 74224.

  18. Structural, vibrational, and gasochromic properties of porous WO sub 3 films templated with a sol-gel organic-inorganic hybrid

    CERN Document Server

    Opara-Krasovec, U; Orel, B; Grdadolnik, J; Drazic, G

    2002-01-01

    The structure and the gasochromic properties of sol-gel-derived WO sub 3 films with a monoclinic structure (m-WO sub 3) were studied by focusing attention on the size of the monoclinic grains. The size of the m-WO sub 3 grains is modified by the addition of an organic-inorganic hybrid to the initial peroxopolytungstic acid (W-PTA) sols which are based on chemically bonded poly-(propylene glycol) to triethoxysilane end-capping groups (ICS-PPG). The results obtained with scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that the heat treatment (500 sup o C) of WO sub 3 /ICS- IPG (0.5, 1, 2, 5, and 10 mol%) composite films results in a change of their morphology, and nanodimensional pores are formed between the grains. High-resolution TEM (HRTEM) analysis revealed the presence of an amorphous phase on the outside of the m-WO sub 3 grains, whereas energy-dispersive x-ray spectra (EDXS) showed that this amorphous phase contained W and Si. Impregnation of the WO sub 3 /ICS-PPG film ...

  19. K/sub Ic/ and J/sub Ic/ of Westerly granite: effects of thickness and in-plane dimensions

    International Nuclear Information System (INIS)

    Schmidt, R.A.; Lutz, T.J.

    1978-01-01

    An investigation is described in which tensile properties, fracture toughness, and critical J integral are measured for Westerly granite, a rock that is widely used in rock mechanics studies. This was primarily a parameter sensitivity study in which the effects of specimen dimensions and testing techniques were assessed. It is hoped that this study will aid in establishing tentative standards and guidelines for fracture toughness testing of rock as well as indicate the feasibility of using a J integral fracture criterion for this material. ASTM standard specimen configurations of the compact and bend types were tested with compact specimens ranging in width from W = 25.4 mm to W = 406.4 mm (0.5T to 8T) and with thickness ranging from 13 mm to 100 mm. A series of 4T compact specimens were tested to assess the effects of thickness and fatigue precracking. Techniques are described that enable several values of K/sub Ic/, a complete J vs crack growth curve, and a J/sub Ic/ value to be obtained from each sample. Direct-pull tension tests on shaped specimens of Westerly granite are described which indicate a high degree of nonlinear, inelastic behavior. This fact raises questions about the use of LEFM, but the J/sub Ic/ data presented appear to validate the K/sub Ic/ measurements

  20. The oiling of ICS

    International Nuclear Information System (INIS)

    Hunter, S.

    1993-01-01

    The incident command system (ICS) works for oil spills. It should be the industry standard and some will argue that it already is. But there are a number of temptations to fiddle with it. Fueling these inclinations is the fundamental difference between oil spills and natural disasters: Oil spills make the perpetrator fix the problem - under heavy oversight. Add to this difference the public outcry that attends oil spills and the dual role of government as both helper and prosecutor. From these conditions emerge adaptations of ICS which both weaken and strengthen it. The benefits of ICS are diminished by deputy incident commanders who block unified commanders from access to section chiefs, over-zealous crisis managers who displace command post decisions or its information office, separate press offices with party line slants, government law enforcement activity mixed into spill response, nonstandard operations terminology and structure involving open-quotes containment and clean upclose quotes or open-quotes salvage,close quotes and the commingling of public and private response funds. ICS's application to oil spill response is strengthened by the use of trained unified commanders, deputy incident commanders who operate as staff rather than line, crisis managers who support on-scene objectives, joint information centers, and heavy involvement of skilled, prepared environmental assessment teams in the planning section who generate priorities, strategies, and (operationally coordinated) tactics. Technically, not all these points constitute alterations of ICS, but most do and the others come close. This mixed bag of strengthening and weakening tweaks to oil spill ICS provides an opportunity to take a new look at this faithful friend to the crisis responder

  1. CVD molybdenum films of high infrared reflectance

    Energy Technology Data Exchange (ETDEWEB)

    Carver, G. E.

    1979-01-01

    Molybdenum thin films of high infrared reflectance have been deposited by pyrolytic decomposition of molybdenum carbonyl (Mo(CO)/sub 6/), and by hydrogen reduction of molybdenum pentachloride (MoCl/sub 5/). Reflectance values within 0.7% of the reflectance of supersmooth bulk molybdenum have been attained by annealing films of lower reflectance in both reducing and non-reducing atmospheres. All depositions and anneals proceed at atmospheric pressure, facilitating a continuous, flow-through fabrication. These reflectors combine the high temperature stability of molybdenum thin films with the infrared reflectance of a material such as aluminum. Deposition from Mo(CO)/sub 6/ under oxidizing conditions, and subsequent anneal in a reducing atmosphere, results in films that combine high solar absorptance with low thermal emittance. If anti-reflected, black molybdenum films can serve as highly selective single layer photothermal converters. Structural, compositional, and crystallographic properties have been measured after both deposition and anneal.

  2. Encountering Difference: Images of Otherness in Contemporary Spanish Film

    Science.gov (United States)

    Smith, Andrea Meador; Campbell, Sarah Cox

    2015-01-01

    Addressing the underrepresentation of films by female directors in Spanish language and culture classes, this work proposes the inclusion of two films, Chus Gutiérrez's "Retorno a Hansala" (2008) and Icíar Bollaín's "También la lluvia" (2010), in the curriculum of advanced or upper-level Spanish courses. Both films expand…

  3. High-coercivity FePt sputtered films

    International Nuclear Information System (INIS)

    Luong, N.H.; Hiep, V.V.; Hong, D.M.; Chau, N.; Linh, N.D.; Kurisu, M.; Anh, D.T.K.; Nakamoto, G.

    2005-01-01

    Fe 56 Pt 44 thin films have been prepared by RF magnetron sputtering on Si substrates. The substrate temperature was kept at 350 deg C. The X-ray diffraction patterns of as-deposited FePt films exhibited a disordered structure. Annealing of the films at 650-685 deg C for 1 h yielded an ordered L1 0 phase with FCT structure. The high value for coercivity H C of 17 kOe was obtained at room temperature for the 68 nm thick film annealed at 685 deg C. The hard magnetic properties as well as grain structure of the films strongly depend on the annealing conditions

  4. Irregular Dwarf Galaxy IC 1613

    Science.gov (United States)

    2005-01-01

    Ultraviolet image (left) and visual image (right) of the irregular dwarf galaxy IC 1613. Low surface brightness galaxies, such as IC 1613, are more easily detected in the ultraviolet because of the low background levels compared to visual wavelengths.

  5. Sensitivity Study on Availability of I&C Components Using Bayesian Network

    Directory of Open Access Journals (Sweden)

    Rahman Khalil Ur

    2013-01-01

    Full Text Available The objective of this study is to find out the impact of instrumentation and control (I&C components on the availability of I&C systems in terms of sensitivity analysis using Bayesian network. The analysis has been performed on I&C architecture of reactor protection system. The analysis results would be applied to develop I&C architecture which will meet the desire reliability features and save cost. RPS architecture unavailability P(x=0 and availability P(x=1 were estimated to 6.1276E-05 and 9.9994E-01 for failure (0 and perfect (1 states, respectively. The impact of I&C components on overall system risk has been studied in terms of risk achievement worth (RAW and risk reduction worth (RRW. It is found that circuit breaker failure (TCB, bi-stable processor (BP, sensor transmitter (TR, and pressure transmitter (PT have high impact on risk. The study concludes and recommends that circuit breaker bi-stable processor should be given more consideration while designing I&C architecture.

  6. Validating a High Performance Liquid Chromatography-Ion Chromatography (HPLC-IC) Method with Conductivity Detection After Chemical Suppression for Water Fluoride Estimation.

    Science.gov (United States)

    Bondu, Joseph Dian; Selvakumar, R; Fleming, Jude Joseph

    2018-01-01

    A variety of methods, including the Ion Selective Electrode (ISE), have been used for estimation of fluoride levels in drinking water. But as these methods suffer many drawbacks, the newer method of IC has replaced many of these methods. The study aimed at (1) validating IC for estimation of fluoride levels in drinking water and (2) to assess drinking water fluoride levels of villages in and around Vellore district using IC. Forty nine paired drinking water samples were measured using ISE and IC method (Metrohm). Water samples from 165 randomly selected villages in and around Vellore district were collected for fluoride estimation over 1 year. Standardization of IC method showed good within run precision, linearity and coefficient of variance with correlation coefficient R 2  = 0.998. The limit of detection was 0.027 ppm and limit of quantification was 0.083 ppm. Among 165 villages, 46.1% of the villages recorded water fluoride levels >1.00 ppm from which 19.4% had levels ranging from 1 to 1.5 ppm, 10.9% had recorded levels 1.5-2 ppm and about 12.7% had levels of 2.0-3.0 ppm. Three percent of villages had more than 3.0 ppm fluoride in the water tested. Most (44.42%) of these villages belonged to Jolarpet taluk with moderate to high (0.86-3.56 ppm) water fluoride levels. Ion Chromatography method has been validated and is therefore a reliable method in assessment of fluoride levels in the drinking water. While the residents of Jolarpet taluk (Vellore distict) are found to be at a high risk of developing dental and skeletal fluorosis.

  7. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy

    International Nuclear Information System (INIS)

    Lai Yiuwai; Hofmann, Martin R; Ludwig, Alfred; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios

    2011-01-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  8. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    Science.gov (United States)

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  9. Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

    Science.gov (United States)

    Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

    2016-05-04

    Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

  10. CMOS analog integrated circuit design technology; CMOS anarogu IC sekkei gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, H.; Fujisawa, A. [Fuji Electric Co. Ltd., Tokyo (Japan)

    2000-08-10

    In the field of the LSI (large scale integrated circuit) in rapid progress toward high integration and advanced functions, CAD (computer-aided design) technology has become indispensable to LSI development within a short period. Fuji Electric has developed design technologies and automatic design system to develop high-quality analog ICs (integrated circuits), including power supply ICs. within a short period. This paper describes CMOS (complementary metal-oxide semiconductor) analog macro cell, circuit simulation, automatic routing, and backannotation technologies. (author)

  11. Wafer level 3-D ICs process technology

    CERN Document Server

    Tan, Chuan Seng; Reif, L Rafael

    2009-01-01

    This book focuses on foundry-based process technology that enables the fabrication of 3-D ICs. The core of the book discusses the technology platform for pre-packaging wafer lever 3-D ICs. However, this book does not include a detailed discussion of 3-D ICs design and 3-D packaging. This is an edited book based on chapters contributed by various experts in the field of wafer-level 3-D ICs process technology. They are from academia, research labs and industry.

  12. Advances in analog and RF IC design for wireless communication systems

    CERN Document Server

    Manganaro, Gabriele

    2013-01-01

    Advances in Analog and RF IC Design for Wireless Communication Systems gives technical introductions to the latest and most significant topics in the area of circuit design of analog/RF ICs for wireless communication systems, emphasizing wireless infrastructure rather than handsets. The book ranges from very high performance circuits for complex wireless infrastructure systems to selected highly integrated systems for handsets and mobile devices. Coverage includes power amplifiers, low-noise amplifiers, modulators, analog-to-digital converters (ADCs) and digital-to-analog converters

  13. Use of advanced commercial ICs (COTS) for space application

    International Nuclear Information System (INIS)

    Strobel, D.J.; Czajkowski, D.R.; Layton, P.; Shanken, S.

    1999-01-01

    A product line of space-qualified radiation-tolerant ICs based on a high-volume commercial-off-the-shelf (COTS) silicon has been developed. The basic results from over 300 lots of COTS silicon, assembled and screened to Class B and Class S requirements will be presented. Intelligent use of commercial ICs engineered to improve radiation performance, is effective in introducing advanced technology to new satellite systems. Space Electronics has introduced over 125 space-qualified microelectronics standard products, that are used on over 90 space projects. (authors)

  14. A high-efficiency solution-deposited thin-film photovoltaic device

    Energy Technology Data Exchange (ETDEWEB)

    Mitzi, David B; Yuan, Min; Liu, Wei; Chey, S Jay; Schrott, Alex G [IBM T. J. Watson Research Center, Yorktown Heights, NY (United States); Kellock, Andrew J; Deline, Vaughn [IBM Almaden Research Center, San Jose, CA (United States)

    2008-10-02

    High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  15. 2nd International Conference on Rheology and Modeling of Materials (IC-RMM2)

    International Nuclear Information System (INIS)

    2017-01-01

    , nanomaterials, medical- and biomaterials, cosmetics, coatings, light metals, alloys, glasses, films, composites, hetero-modulus, hetero-viscous, hetero-plastic complex materials, petrochemicals and hybrid materials. Multidisciplinary applications of rheology and rheological modeling in material science and technology encountered in sectors like alloys, ceramics, glasses, thin films, polymers, clays, construction materials, energy, aerospace, automotive and marine industry. Rheology in food, chemistry, medicine, biosciences and environmental sciences are of particular interests. In accordance to the program of the conference ic-rmm2 and symposiums is-pim1 and isrfs1 we have received more than 250 inquires and registrations from different organizations. Finally more than 240 abstracts were accepted for presentation. From them 12 were PLENARY lectures and 112 ORAL presentation. Researchers from 41 countries of Asia, Europe, Africa, North and South America arrived to Miskolc-Lillafüred (Hungary) and participated in the events of the conference. Including co-authors, the research work of more than 700 scientists were presented in the SESSIONS and SYMPOSIUMS of ic-rmm2 conference. Prof. Dr. László A. Gömze chair, ic-rmm2 (paper)

  16. 2nd International Conference on Rheology and Modeling of Materials (IC-RMM2)

    Science.gov (United States)

    2017-01-01

    , nanomaterials, medical- and biomaterials, cosmetics, coatings, light metals, alloys, glasses, films, composites, hetero-modulus, hetero-viscous, hetero-plastic complex materials, petrochemicals and hybrid materials. Multidisciplinary applications of rheology and rheological modeling in material science and technology encountered in sectors like alloys, ceramics, glasses, thin films, polymers, clays, construction materials, energy, aerospace, automotive and marine industry. Rheology in food, chemistry, medicine, biosciences and environmental sciences are of particular interests. In accordance to the program of the conference ic-rmm2 and symposiums is-pim1 and isrfs1 we have received more than 250 inquires and registrations from different organizations. Finally more than 240 abstracts were accepted for presentation. From them 12 were PLENARY lectures and 112 ORAL presentation. Researchers from 41 countries of Asia, Europe, Africa, North and South America arrived to Miskolc-Lillafüred (Hungary) and participated in the events of the conference. Including co-authors, the research work of more than 700 scientists were presented in the SESSIONS and SYMPOSIUMS of ic-rmm2 conference. Prof. Dr. László A. Gömze chair, ic-rmm2

  17. SEM probe of IC radiation sensitivity

    Science.gov (United States)

    Gauthier, M. K.; Stanley, A. G.

    1979-01-01

    Scanning Electron Microscope (SEM) used to irradiate single integrated circuit (IC) subcomponent to test for radiation sensitivity can localize area of IC less than .03 by .03 mm for determination of exact location of radiation sensitive section.

  18. Dicty_cDB: FC-IC0102 [Dicty_cDB

    Lifescience Database Archive (English)

    Full Text Available FC-IC (Link to library) FC-IC0102 (Link to dictyBase) - - - Contig-U16527-1 FC-IC01...02F (Link to Original site) FC-IC0102F 434 - - - - - - Show FC-IC0102 Library FC-IC (Link to library) Clone ...ID FC-IC0102 (Link to dictyBase) Atlas ID - NBRP ID - dictyBase ID - Link to Contig Contig-U16527-1 Original site URL http://dict... (bits) Value N AB088483 |AB088483.1 Dictyostelium discoideum gene for gamete and mating-type specific prote...oducing significant alignments: (bits) Value AB088483_1( AB088483 |pid:none) Dictyostelium discoideum gmsA g

  19. Radiographic film dosimetry of proton beams for depth‐dose constancy check and beam profile measurement

    Science.gov (United States)

    Teran, Anthony; Ghebremedhin, Abiel; Johnson, Matt; Patyal, Baldev

    2015-01-01

    Radiographic film dosimetry suffers from its energy dependence in proton dosimetry. This study sought to develop a method of measuring proton beams by the film and to evaluate film response to proton beams for the constancy check of depth dose (DD). It also evaluated the film for profile measurements. To achieve this goal, from DDs measured by film and ion chamber (IC), calibration factors (ratios of dose measured by IC to film responses) as a function of depth in a phantom were obtained. These factors imply variable slopes (with proton energy and depth) of linear characteristic curves that relate film response to dose. We derived a calibration method that enables utilization of the factors for acquisition of dose from film density measured at later dates by adapting to a potentially altered processor condition. To test this model, the characteristic curve was obtained by using EDR2 film and in‐phantom film dosimetry in parallel with a 149.65 MeV proton beam, using the method. An additional validation of the model was performed by concurrent film and IC measurement perpendicular to the beam at various depths. Beam profile measurements by the film were also evaluated at the center of beam modulation. In order to interpret and ascertain the film dosimetry, Monte Carlos simulation of the beam was performed, calculating the proton fluence spectrum along depths and off‐axis distances. By multiplying respective stopping powers to the spectrum, doses to film and water were calculated. The ratio of film dose to water dose was evaluated. Results are as follows. The characteristic curve proved the assumed linearity. The measured DD approached that of IC, but near the end of the spread‐out Bragg peak (SOBP), a spurious peak was observed due to the mismatch of distal edge between the calibration and measurement films. The width of SOBP and the proximal edge were both reproducible within a maximum of 5 mm; the distal edge was reproducible within 1 mm. At 5 cm depth, the

  20. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  1. Identification of signals that facilitate isoform specific nucleolar localization of myosin IC

    Energy Technology Data Exchange (ETDEWEB)

    Schwab, Ryan S.; Ihnatovych, Ivanna; Yunus, Sharifah Z.S.A.; Domaradzki, Tera [Department of Physiology and Biophysics, University at Buffalo—State University of New York, Buffalo, NY (United States); Hofmann, Wilma A., E-mail: whofmann@buffalo.edu [Department of Physiology and Biophysics, University at Buffalo—State University of New York, Buffalo, NY (United States)

    2013-05-01

    Myosin IC is a single headed member of the myosin superfamily that localizes to the cytoplasm and the nucleus, where it is involved in transcription by RNA polymerases I and II, intranuclear transport, and nuclear export. In mammalian cells, three isoforms of myosin IC are expressed that differ only in the addition of short isoform-specific N-terminal peptides. Despite the high sequence homology, the isoforms show differences in cellular distribution, in localization to nuclear substructures, and in their interaction with nuclear proteins through yet unknown mechanisms. In this study, we used EGFP-fusion constructs that express truncated or mutated versions of myosin IC isoforms to detect regions that are involved in isoform-specific localization. We identified two nucleolar localization signals (NoLS). One NoLS is located in the myosin IC isoform B specific N-terminal peptide, the second NoLS is located upstream of the neck region within the head domain. We demonstrate that both NoLS are functional and necessary for nucleolar localization of specifically myosin IC isoform B. Our data provide a first mechanistic explanation for the observed functional differences between the myosin IC isoforms and are an important step toward our understanding of the underlying mechanisms that regulate the various and distinct functions of myosin IC isoforms. - Highlights: ► Two NoLS have been identified in the myosin IC isoform B sequence. ► Both NoLS are necessary for myosin IC isoform B specific nucleolar localization. ► First mechanistic explanation of functional differences between the isoforms.

  2. Colloidal silica films for high-capacity DNA arrays

    Science.gov (United States)

    Glazer, Marc Irving

    The human genome project has greatly expanded the amount of genetic information available to researchers, but before this vast new source of data can be fully utilized, techniques for rapid, large-scale analysis of DNA and RNA must continue to develop. DNA arrays have emerged as a powerful new technology for analyzing genomic samples in a highly parallel format. The detection sensitivity of these arrays is dependent on the quantity and density of immobilized probe molecules. We have investigated substrates with a porous, "three-dimensional" surface layer as a means of increasing the surface area available for the synthesis of oligonucleotide probes, thereby increasing the number of available probes and the amount of detectable bound target. Porous colloidal silica films were created by two techniques. In the first approach, films were deposited by spin-coating silica colloid suspensions onto flat glass substrates, with the pores being formed by the natural voids between the solid particles (typically 23nm pores, 35% porosity). In the second approach, latex particles were co-deposited with the silica and then pyrolyzed, creating films with larger pores (36 nm), higher porosity (65%), and higher surface area. For 0.3 mum films, enhancements of eight to ten-fold and 12- to 14-fold were achieved with the pure silica films and the films "templated" with polymer latex, respectively. In gene expression assays for up to 7,000 genes using complex biological samples, the high-capacity films provided enhanced signals and performed equivalently or better than planar glass on all other functional measures, confirming that colloidal silica films are a promising platform for high-capacity DNA arrays. We have also investigated the kinetics of hybridization on planar glass and high-capacity substrates. Adsorption on planar arrays is similar to ideal Langmuir-type adsorption, although with an "overshoot" at high solution concentration. Hybridization on high-capacity films is

  3. Effects of structural modification via high-pressure annealing on solution-processed InGaO films and thin-film transistors

    International Nuclear Information System (INIS)

    Rim, You Seung; Choi, Hyung-Wook; Kim, Kyung Hwan; Kim, Hyun Jae

    2016-01-01

    We investigated the structural modification of solution-processed nanocrystalline InGaO films via high-pressure annealing and fabricated thin-film transistors. The grain size of InGaO films annealed in the presence of oxygen under high pressure was significantly changed compared the films annealed without high pressure ambient. The O1s XPS peak distribution of InGaO films annealed under high pressure at 350 °C showed a peak similar to that of the non-pressure annealed film at 500 °C. The high-pressure annealing process promoted the elimination of organic residues and dehydroxylation of the metal hydroxide (M–OH) complex. We confirmed the improved device performance of high-pressure annealed InGaO-based thin-film transistors owing to the reduction in charge-trap density. (paper)

  4. Classification of fMRI independent components using IC-fingerprints and support vector machine classifiers.

    Science.gov (United States)

    De Martino, Federico; Gentile, Francesco; Esposito, Fabrizio; Balsi, Marco; Di Salle, Francesco; Goebel, Rainer; Formisano, Elia

    2007-01-01

    We present a general method for the classification of independent components (ICs) extracted from functional MRI (fMRI) data sets. The method consists of two steps. In the first step, each fMRI-IC is associated with an IC-fingerprint, i.e., a representation of the component in a multidimensional space of parameters. These parameters are post hoc estimates of global properties of the ICs and are largely independent of a specific experimental design and stimulus timing. In the second step a machine learning algorithm automatically separates the IC-fingerprints into six general classes after preliminary training performed on a small subset of expert-labeled components. We illustrate this approach in a multisubject fMRI study employing visual structure-from-motion stimuli encoding faces and control random shapes. We show that: (1) IC-fingerprints are a valuable tool for the inspection, characterization and selection of fMRI-ICs and (2) automatic classifications of fMRI-ICs in new subjects present a high correspondence with those obtained by expert visual inspection of the components. Importantly, our classification procedure highlights several neurophysiologically interesting processes. The most intriguing of which is reflected, with high intra- and inter-subject reproducibility, in one IC exhibiting a transiently task-related activation in the 'face' region of the primary sensorimotor cortex. This suggests that in addition to or as part of the mirror system, somatotopic regions of the sensorimotor cortex are involved in disambiguating the perception of a moving body part. Finally, we show that the same classification algorithm can be successfully applied, without re-training, to fMRI collected using acquisition parameters, stimulation modality and timing considerably different from those used for training.

  5. Harmonic generation effect in high-Tc films

    International Nuclear Information System (INIS)

    Khare, Neeraj; Shrivastava, S.K.; Padmanabhan, V.P.N.; Khare, Sangeeta; Gupta, A.K.

    1997-01-01

    Harmonic generation in thick BPSCCO and thin YBCO films are reported. The application of an ac field (H ac > H c1 ) of frequency f causes the generation of odd harmonics of frequency (2n+1)f. The application of dc field in addition to the ac field causes the appearance of even harmonics also in the BPSCCO film. However, the appearance of even harmonics is not observed in YBCO film with high J c ∼ 1.6x10 6 A/cm 2 and appearance of second harmonic with small magnitude is observed in YBCO film with low J c ∼ 2x10 3 A/cm 2 . The variation of amplitudes of these harmonics are studied as a function of magnitude of ac and dc field and the results are explained in the framework of critical state model. A high-T c film magnetometer based on the measurement of the amplitude of second harmonic has been developed whose field sensitivity is ∼ 1.5x10 -8 T. (author)

  6. Dynamical Competition of IC-Industry Clustering from Taiwan to China

    Science.gov (United States)

    Tsai, Bi-Huei; Tsai, Kuo-Hui

    2009-08-01

    Most studies employ qualitative approach to explore the industrial clusters; however, few research has objectively quantified the evolutions of industry clustering. The purpose of this paper is to quantitatively analyze clustering among IC design, IC manufacturing as well as IC packaging and testing industries by using the foreign direct investment (FDI) data. The Lotka-Volterra system equations are first adopted here to capture the competition or cooperation among such three industries, thus explaining their clustering inclinations. The results indicate that the evolution of FDI into China for IC design industry significantly inspire the subsequent FDI of IC manufacturing as well as IC packaging and testing industries. Since IC design industry lie in the upstream stage of IC production, the middle-stream IC manufacturing and downstream IC packing and testing enterprises tend to cluster together with IC design firms, in order to sustain a steady business. Finally, Taiwan IC industry's FDI amount into China is predicted to cumulatively increase, which supports the industrial clustering tendency for Taiwan IC industry. Particularly, the FDI prediction of Lotka-Volterra model performs superior to that of the conventional Bass model after the forecast accuracy of these two models are compared. The prediction ability is dramatically improved as the industrial mutualism among each IC production stage is taken into account.

  7. Fabrication of highly ordered nanoporous alumina films by stable high-field anodization

    International Nuclear Information System (INIS)

    Li Yanbo; Zheng Maojun; Ma Li; Shen Wenzhong

    2006-01-01

    Stable high-field anodization (1500-4000 A m -2 ) for the fabrication of highly ordered porous anodic alumina films has been realized in a H 3 PO 4 -H 2 O-C 2 H 5 OH system. By maintaining the self-ordering voltage and adjusting the anodizing current density, high-quality self-ordered alumina films with a controllable inter-pore distance over a large range are achieved. The high anodizing current densities lead to high-speed film growth (4-10 μm min -1 ). The inter-pore distance is not solely dependent on the anodizing voltage, but is also influenced by the anodizing current density. This approach is simple and cost-effective, and is of great value for applications in diverse areas of nanotechnology

  8. Application of a Coated Film Catalyst Layer Model to a High Temperature Polymer Electrolyte Membrane Fuel Cell with Low Catalyst Loading Produced by Reactive Spray Deposition Technology

    Directory of Open Access Journals (Sweden)

    Timothy D. Myles

    2015-10-01

    Full Text Available In this study, a semi-empirical model is presented that correlates to previously obtained experimental overpotential data for a high temperature polymer electrolyte membrane fuel cell (HT-PEMFC. The goal is to reinforce the understanding of the performance of the cell from a modeling perspective. The HT-PEMFC membrane electrode assemblies (MEAs were constructed utilizing an 85 wt. % phosphoric acid doped Advent TPS® membranes for the electrolyte and gas diffusion electrodes (GDEs manufactured by Reactive Spray Deposition Technology (RSDT. MEAs with varying ratios of PTFE binder to carbon support material (I/C ratio were manufactured and their performance at various operating temperatures was recorded. The semi-empirical model derivation was based on the coated film catalyst layer approach and was calibrated to the experimental data by a least squares method. The behavior of important physical parameters as a function of I/C ratio and operating temperature were explored.

  9. Prion seeding activities of mouse scrapie strains with divergent PrPSc protease sensitivities and amyloid plaque content using RT-QuIC and eQuIC.

    Directory of Open Access Journals (Sweden)

    Sarah Vascellari

    Full Text Available Different transmissible spongiform encephalopathy (TSE-associated forms of prion protein (e.g. PrP(Sc can vary markedly in ultrastructure and biochemical characteristics, but each is propagated in the host. PrP(Sc propagation involves conversion from its normal isoform, PrP(C, by a seeded or templated polymerization mechanism. Such a mechanism is also the basis of the RT-QuIC and eQuIC prion assays which use recombinant PrP (rPrP(Sen as a substrate. These ultrasensitive detection assays have been developed for TSE prions of several host species and sample tissues, but not for murine models which are central to TSE pathogenesis research. Here we have adapted RT-QuIC and eQuIC to various murine prions and evaluated how seeding activity depends on glycophosphatidylinositol (GPI anchoring and the abundance of amyloid plaques and protease-resistant PrP(Sc (PrP(Res. Scrapie brain dilutions up to 10(-8 and 10(-13 were detected by RT-QuIC and eQuIC, respectively. Comparisons of scrapie-affected wild-type mice and transgenic mice expressing GPI anchorless PrP showed that, although similar concentrations of seeding activity accumulated in brain, the heavily amyloid-laden anchorless mouse tissue seeded more rapid reactions. Next we compared seeding activities in the brains of mice with similar infectivity titers, but widely divergent PrP(Res levels. For this purpose we compared the 263K and 139A scrapie strains in transgenic mice expressing P101L PrP(C. Although the brains of 263K-affected mice had little immunoblot-detectable PrP(Res, RT-QuIC indicated that seeding activity was comparable to that associated with a high-PrP(Res strain, 139A. Thus, in this comparison, RT-QuIC seeding activity correlated more closely with infectivity than with PrP(Res levels. We also found that eQuIC, which incorporates a PrP(Sc immunoprecipitation step, detected seeding activity in plasma from wild-type and anchorless PrP transgenic mice inoculated with 22L, 79A and/or RML

  10. High performance, freestanding and superthin carbon nanotube/epoxy nanocomposite films.

    Science.gov (United States)

    Li, Jinzhu; Gao, Yun; Ma, Wenjun; Liu, Luqi; Zhang, Zhong; Niu, Zhiqiang; Ren, Yan; Zhang, Xiaoxian; Zeng, Qingshen; Dong, Haibo; Zhao, Duan; Cai, Le; Zhou, Weiya; Xie, Sishen

    2011-09-01

    We develop a facile, effective and filter free infiltration method to fabricate high performance, freestanding and superthin epoxy nanocomposite films with directly synthesized Sing-Walled Carbon Nanotubes (SWNTs) film as reinforcement skeleton. It is found that the thicknesses of the nanocomposite films can be easily controlled in the range of 0.5-3 μm by dripping target amount of acetone diluted epoxy through the skeleton film. The consequent measurements reveal that the mechanical and electrical properties of SWNTs/epoxy nanocomposite films could be tailored in a quite wide range. For examples, the Young's modulus of nanocomposite films can be tuned from 10 to 30 GPa, and the electrical conductivity can be ranged from 1000 S·cm(-1) to be insulated. Moreover, high load transfer efficiency in the nanocomposite films is demonstrated by the measured ultrahigh Raman bands shift rate (-30 ± 5 cm(-1)/% strain) under strain. The high effective modulus is derived as 774 ± 70 GPa for SWNTs inside this nanocomposite film.

  11. IC Associated Conditions

    Science.gov (United States)

    ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Click to learn more about these and ...

  12. High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sang Woo [Nano-Materials Research Center, Korea Institute of Science and Technology, 39-1 Haweoulgog-dong, Sungbuk-gu, Seoul 136-791 (Korea, Republic of)]. E-mail: swkim@kist.re.kr; Yoon, Chong S. [Division of Advanced Materials Science, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2007-09-15

    Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization.

  13. High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

    International Nuclear Information System (INIS)

    Kim, Sang Woo; Yoon, Chong S.

    2007-01-01

    Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization

  14. High quality digital holographic reconstruction on analog film

    Science.gov (United States)

    Nelsen, B.; Hartmann, P.

    2017-05-01

    High quality real-time digital holographic reconstruction, i.e. at 30 Hz frame rates, has been at the forefront of research and has been hailed as the holy grail of display systems. While these efforts have produced a fascinating array of computer algorithms and technology, many applications of reconstructing high quality digital holograms do not require such high frame rates. In fact, applications such as 3D holographic lithography even require a stationary mask. Typical devices used for digital hologram reconstruction are based on spatial-light-modulator technology and this technology is great for reconstructing arbitrary holograms on the fly; however, it lacks the high spatial resolution achievable by its analog counterpart, holographic film. Analog holographic film is therefore the method of choice for reconstructing highquality static holograms. The challenge lies in taking a static, high-quality digitally calculated hologram and effectively writing it to holographic film. We have developed a theoretical system based on a tunable phase plate, an intensity adjustable high-coherence laser and a slip-stick based piezo rotation stage to effectively produce a digitally calculated hologram on analog film. The configuration reproduces the individual components, both the amplitude and phase, of the hologram in the Fourier domain. These Fourier components are then individually written on the holographic film after interfering with a reference beam. The system is analogous to writing angularly multiplexed plane waves with individual component phase control.

  15. Magnetic films for GHz applications (abstract)

    International Nuclear Information System (INIS)

    Korenivski, V.; van Dover, R.B.

    1997-01-01

    Tremendous growth of the communications industry and the increasingly high demand for low-cost light-weight/small-size products drive technology to designs with a high degree of integration. In particular, planar inductors used in integrated circuits with significantly improved inductance per unit area characteristics are needed for further miniaturization of cellular phones operating at 0.95 and 1.9 GHz. Little has been done, however, to use magnetic films to improve the performance and/or reduce size of planar magnetic flux devices. The successful thin-film material would have a high ferromagnetic resonance (FMR) frequency (well above the operating frequency of the device), large permaeability, and low magnetic loss, and very importantly be technologically attractive, i.e., be process compatible with IC technology and have as few preparation steps as possible. Here, we report on fabrication of metallic ferromagnetic films of CoNbZr, CoNbZr/AlN mulitilayered laminates, and exchange-biased structures suitable for GHz applications. Lamination of CoNbZr with thin insulating layers of AlN is shown to significantly improve the microstructure and dc magnetic properties of the films having thicknesses >0.2 μm, as well as to be effective in suppressing eddy current losses at frequencies up to 1 endash 2 GHz. We use exchange biasing to increase the FMR frequency of soft CoNbZr. In-plane unidirectional anisotropy fields of ∼50 Oe are achieved, which result in FMR frequencies >2 GHz. Permeability values of ∼200 with quality factors of ∼10 at 1 GHz are demonstrated. The films are deposited at room temperature and require no postdeposition processing. Application of these films in planar inductors is discussed.copyright 1997 American Institute of Physics

  16. Analog IC Design at the University of Twente

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    This article describes some recent research results from the IC Design group of the University of Twente, located in Enschede, The Netherlands. Our research focuses on analog CMOS circuit design with emphasis on high frequency and broadband circuits. With the trend of system integration in mind, we

  17. A GRB and Broad-lined Type Ic Supernova from a Single Central Engine

    Science.gov (United States)

    Barnes, Jennifer; Duffell, Paul C.; Liu, Yuqian; Modjaz, Maryam; Bianco, Federica B.; Kasen, Daniel; MacFadyen, Andrew I.

    2018-06-01

    Unusually high velocities (≳0.1c) and correspondingly high kinetic energies have been observed in a subset of Type Ic supernovae (so-called “broad-lined Ic” supernovae; SNe Ic-BL), prompting a search for a central engine model capable of generating such energetic explosions. A clue to the explosion mechanism may lie in the fact that all supernovae that accompany long-duration gamma-ray bursts (GRBs) belong to the SN Ic-BL class. Using a combination of two-dimensional relativistic hydrodynamics and radiation transport calculations, we demonstrate that the central engine responsible for long GRBs can also trigger an SN Ic-BL. We find that a reasonable GRB engine injected into a stripped Wolf–Rayet progenitor produces a relativistic jet with energy ∼1051 erg, as well as an SN whose synthetic light curves and spectra are fully consistent with observed SNe Ic-BL during the photospheric phase. As a result of the jet’s asymmetric energy injection, the SN spectra and light curves depend on viewing angle. The impact of viewing angle on the spectrum is particularly pronounced at early times, while the viewing-angle dependence for the light curves (∼10% variation in bolometric luminosity) persists throughout the photospheric phase.

  18. On the application of a new principle and new class of materials for protection of the IC systems against high power electromagnetic pulses (HPEMP)

    International Nuclear Information System (INIS)

    Vuchkov, L.

    2008-01-01

    The aim of the present work is to make a survey of a new principle and the possibilities for scientific investigations, testing and industrial incorporation of a new shielding material and technology for protection of the IC systems against high energy electromagnetic pulses and ion irradiation. The main result of the implementation of the new- principle, material and technology is to increase the safety of the critical military and civilian infrastructures, land-based and space techniques, apparatuses, devices and their components against high energy electromagnetic pulses and ion irradiation, including electromagnetic weapon arsenal of the international terrorist groups. Key words: electromagnetic pulses, ion irradiation, IC electronic equipment degradation, shielding protection

  19. On the application of a new principle and new class of materials for protection of the IC systems against high power electromagnetic pulses (HPEMP)

    Energy Technology Data Exchange (ETDEWEB)

    Vuchkov, L. [Institute of Electrochemistry and Energy Systems, Bulgarian Academy of Scinces, Sofia (Bulgaria)

    2008-07-01

    The aim of the present work is to make a survey of a new principle and the possibilities for scientific investigations, testing and industrial incorporation of a new shielding material and technology for protection of the IC systems against high energy electromagnetic pulses and ion irradiation. The main result of the implementation of the new- principle, material and technology is to increase the safety of the critical military and civilian infrastructures, land-based and space techniques, apparatuses, devices and their components against high energy electromagnetic pulses and ion irradiation, including electromagnetic weapon arsenal of the international terrorist groups. Key words: electromagnetic pulses, ion irradiation, IC electronic equipment degradation, shielding protection.

  20. Sliding Mode Pulsed Averaging IC Drivers for High Brightness Light Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Anatoly Shteynberg, PhD

    2006-08-17

    This project developed new Light Emitting Diode (LED) driver ICs associated with specific (uniquely operated) switching power supplies that optimize performance for High Brightness LEDs (HB-LEDs). The drivers utilize a digital control core with a newly developed nonlinear, hysteretic/sliding mode controller with mixed-signal processing. The drivers are flexible enough to allow both traditional microprocessor interface as well as other options such as “on the fly” adjustment of color and brightness. Some other unique features of the newly developed drivers include • AC Power Factor Correction; • High power efficiency; • Substantially fewer external components should be required, leading to substantial reduction of Bill of Materials (BOM). Thus, the LED drivers developed in this research : optimize LED performance by increasing power efficiency and power factor. Perhaps more remarkably, the LED drivers provide this improved performance at substantially reduced costs compared to the present LED power electronic driver circuits. Since one of the barriers to market penetration for HB-LEDs (in particular “white” light LEDs) is cost/lumen, this research makes important contributions in helping the advancement of SSL consumer acceptance and usage.

  1. Highly stressed carbon film coatings on silicon potential applications

    CERN Multimedia

    Sharda, T

    2002-01-01

    The fabrication of highly stressed and strongly adhered nanocrystalline diamond films on Si substrates is presented. A microwave plasma CVD method with controlled and continuous bias current density was used to grow the films. The stress/curvature of the films can be varied and controlled by altering the BCD. Potential applications for these films include particle physics and x-ray optics.

  2. Conceptualising Intellectual Capital (IC) as Language Game and Power

    DEFF Research Database (Denmark)

    Jørgensen, Kenneth Mølbjerg

    2006-01-01

    Intellectual Capital (IC) can be viewed as knowledge about knowledge, knowledge creation and how such processes might be leveraged into value. Developing a critical understanding of IC requires a historical and contextual understanding of how IC has emerged and how IC is used. This paper, drawing...... this process of social construction. The paper concludes by proposing some methodological guidelines for conducting critical genealogical research on intellectual capital....

  3. Revealing the nebular properties and Wolf-Rayet population of IC10 with Gemini/GMOS

    Science.gov (United States)

    Tehrani, Katie; Crowther, Paul A.; Archer, I.

    2017-12-01

    We present a deep imaging and spectroscopic survey of the Local Group irregular galaxy IC10 using Gemini North and GMOS to unveil its global Wolf-Rayet (WR) population. We obtain a star formation rate (SFR) of 0.045 ± 0.023 M⊙ yr-1, for IC10 from the nebular H α luminosity, which is comparable to the Small Magellanic Cloud. We also present a revised nebular oxygen abundance of log(O/H) + 12 = 8.40 ± 0.04, comparable to the LMC. It has previously been suggested that for IC10 to follow the WR subtype-metallicity dependance seen in other Local Group galaxies, a large WN population awaits discovery. Our search revealed three new WN stars, and six candidates awaiting confirmation, providing little evidence to support this claim. The new global WR star total of 29 stars is consistent with the Large Magellanic Cloud population when scaled to the reduced SFR of IC10. For spectroscopically confirmed WR stars, the WC/WN ratio is lowered to 1.0; however, including all potential candidates, and assuming those unconfirmed to be WN stars, would reduce the ratio to ∼0.7. We attribute the high WC/WN ratio to the high star formation surface density of IC10 relative to the Magellanic Clouds, which enhances the frequency of high-mass stars capable of producing WC stars.

  4. Studying Radiation Tolerant ICs for LHC

    CERN Multimedia

    Faccio, F; Snoeys, W; Campbell, M; Casas-cubillos, J; Gomes, P

    2002-01-01

    %title\\\\ \\\\In the recent years, intensive work has been carried out on the development of custom ICs for the readout electronics for LHC experiments. As far as radiation hardness is concerned, attention has been focussed on high total dose applications, mainly for the tracker systems. The dose foreseen in this inner region is estimated to be higher than 1~Mrad/year. In the framework of R&D projects (RD-9 and RD-20) and in the ATLAS and CMS experiments, the study of different radiation hard processes has been pursued and good contacts with the manufacturers have been established. The results of these studies have been discussed during the Microelectronics User Group (MUG) rad-hard meetings, and now some HEP groups are working to develop radiation hard ICs for the LHC experiments on some of the available rad-hard processes.\\\\ \\\\In addition, a lot of the standard commercial electronic components and ASICs which are planned to be installed near the LHC machine and in the detectors will receive total doses in ...

  5. High diagnostic value of second generation CSF RT-QuIC across the wide spectrum of CJD prions.

    Science.gov (United States)

    Franceschini, Alessia; Baiardi, Simone; Hughson, Andrew G; McKenzie, Neil; Moda, Fabio; Rossi, Marcello; Capellari, Sabina; Green, Alison; Giaccone, Giorgio; Caughey, Byron; Parchi, Piero

    2017-09-06

    An early and accurate in vivo diagnosis of rapidly progressive dementia remains challenging, despite its critical importance for the outcome of treatable forms, and the formulation of prognosis. Real-Time Quaking-Induced Conversion (RT-QuIC) is an in vitro assay that, for the first time, specifically discriminates patients with prion disease. Here, using cerebrospinal fluid (CSF) samples from 239 patients with definite or probable prion disease and 100 patients with a definite alternative diagnosis, we compared the performance of the first (PQ-CSF) and second generation (IQ-CSF) RT-QuIC assays, and investigated the diagnostic value of IQ-CSF across the broad spectrum of human prions. Our results confirm the high sensitivity of IQ-CSF for detecting human prions with a sub-optimal sensitivity for the sporadic CJD subtypes MM2C and MM2T, and a low sensitivity limited to variant CJD, Gerstmann-Sträussler-Scheinker syndrome and fatal familial insomnia. While we found no difference in specificity between PQ-CSF and IQ-CSF, the latter showed a significant improvement in sensitivity, allowing prion detection in about 80% of PQ-CSF negative CJD samples. Our results strongly support the implementation of IQ-CSF in clinical practice. By rapidly confirming or excluding CJD with high accuracy the assay is expected to improve the outcome for patients and their enrollment in therapeutic trials.

  6. High intensification screen-film systems in thorax radiography: a clinical comparison

    International Nuclear Information System (INIS)

    Schaefer, C.B.; Sokiranski, R.; Claussen, C.D.

    1995-01-01

    Objective: The quality of chest images was evaluated for a conventional screen-film system, a new asymmetric screen-film system, and a new uv screen-film system. Materials and Methods: 138 Chest radiographs (69 p.a., 69 lateral) obtained with three different high intensification screen-film combinations were compared. Film density and film contrast were measured. Three readers graded the image quality according to 16 criteria. Results: The asymmetric film-screen combination Insight HC showed the lowest film contrast, the best exposure range, and a elevated film density in the mediastinal area. The asymmetric screen-film system was ranked by all three observers as being substantially better in image quality. Conclusion: Compared to conventional screen-film systems, the new screen-film systems can improve the image quality of chest radiographs. Therefore, the new high intensification screen-film combinations can be used as a low cost alternative to the Amber technique and digital radiography. (orig.) [de

  7. Activity in SRL Nagoya Coated Conductor Center for YBCO Coated Conductor by IBAD+ PLD Method -Long, high Ic conductor and a new bamboo-like nanostructure for efficient pinning

    International Nuclear Information System (INIS)

    Yamada, Yutaka; Ibi, Akira; Fukushima, Hiroyuki; Kuriki, Reiji; Takahashi, Kazuhiro; Kobayashi, Hiroyoshi; Ishida, Satoru; Konishi, Masaya; Miyata, Seiki; Watanabe, Tomonori; Kato, Takeharu; Hirayama, Tsukasa; Shiohara, Yuh

    2006-01-01

    In SRL-Nagoya Coated Conductor Center (NCCC), long buffered substrate tapes and YBCO coated conductors have been successfully fabricated by using ion-beam assisted deposition (IBAD) and pulsed laser deposition (PLD) methods. For the buffered tape, the PLD-CeO2 method, what we call the 'Self-Epitaxial' method, realized the high degree of in-plane texturing around 4 degrees along the length of 220 m. For YBCO deposition, we have recently introduced new reel-to-reel PLD equipment with a multi-plume and multi-turn deposition system (MPMT PLD). This system succeeded in fabricating a long coated conductor with a high critical current, Ic, of 245 A and length of 212 m. Ic xL (length) reached the world record of 51940 Am. Furthermore, the introduction of artificial pinning center and RE 123 materials were also studied for improving flux pinning and enhancing Ic. A new columnar structure of the 'bamboo structure' (BaZrO3/Y123 layer-stacked structure) was found in Y123+YSZ sample. This columnar structure and the stacking faults in Gd123 were found to be effective for enhancing pinning properties. Using these techniques, we have succeeded in increasing Ic at 0 T to 480 A/cm and also enhancing Ic in a magnetic field

  8. High-mobility ultrathin semiconducting films prepared by spin coating

    Science.gov (United States)

    Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

    2004-03-01

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  9. Development of brain injury criteria (BrIC).

    Science.gov (United States)

    Takhounts, Erik G; Craig, Matthew J; Moorhouse, Kevin; McFadden, Joe; Hasija, Vikas

    2013-11-01

    between CSDM - BrIC and MPS - BrIC respectively. AIS 3+, 4+ and 5+ field risk of anatomic brain injuries was also estimated using the National Automotive Sampling System - Crashworthiness Data System (NASS-CDS) database for crash conditions similar to the frontal NCAP and side impact conditions that the ATDs were tested in. This was done to assess the risk curve ratios derived from HIC risk curves. The results of the study indicated that: (1) the two available human head models - SIMon and GHBMC - were found to be highly correlated when CSDMs and max principal strains were compared; (2) BrIC correlates best to both - CSDM and MPS, and rotational velocity (not rotational acceleration) is the mechanism for brain injuries; and (3) the critical values for angular velocity are directionally dependent, and are independent of the ATD used for measuring them. The newly developed brain injury criterion is a complement to the existing HIC, which is based on translational accelerations. Together, the two criteria may be able to capture most brain injuries and skull fractures occurring in automotive or any other impact environment. One of the main limitations for any brain injury criterion, including BrIC, is the lack of human injury data to validate the criteria against, although some approximation for AIS 2+ injury is given based on the angular velocities calculated at 50% probability of concussion in college football players instrumented with 5 DOF helmet system. Despite the limitations, a new kinematic rotational brain injury criterion - BrIC - may offer a way to capture brain injuries in situations when using translational accelerations based HIC alone may not be sufficient.

  10. High-Tc film development for electronic applications

    International Nuclear Information System (INIS)

    Talvacchio, J.; Wagner, G.R.

    1990-01-01

    In this paper, the authors describe the requirements and status of high-T c superconductor (HTS) films for the development of electronic applications with an emphasis on passive microwave devices. One of the most general requirements, a low rf Surface resistance relative to Cu, has been achieved in films of several different HTS compounds. However the best films, made of YBa 2 Cu 3 O 7 (YBCO) by any one of several techniques, have in common a residual surface resistance that is much greater than predicted by conventional superconductivity theory. Improvement in films is also limited by the current size and selection of single-crystal substrate materials. Other issues that must be resolved to develop a full integrated circuit technology for HTS are substrate heating during film deposition, deposited epitaxial insulators, and determination of which interfaces in a multilevel circuit must be formed in situ

  11. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  12. Interaction domains in high performance NdFeB thick films

    Energy Technology Data Exchange (ETDEWEB)

    Woodcock, Tom; Khlopkov, Kirill; Schultz, Ludwig; Gutfleisch, Oliver [IFW Dresden, IMW, Dresden (Germany); Walther, Arno [Insitut Neel, CNRS-UJF, Grenoble (France); CEA Leti - MINATEC, Grenoble (France); Dempsey, Nora; Givord, Dominique [Insitut Neel, CNRS-UJF, Grenoble (France)

    2009-07-01

    Thick sputtered films (5-300 micron) of NdFeB have excellent hard magnetic properties which make them attractive for applications in micro-electro-mechanical systems (MEMS). A two step process consisting of triode sputtering and high temperature annealing produced films with energy densities approaching those of sintered NdFeB magnets. Magnetic force microscopy (MFM) using hard magnetic tips showed that the films deposited without substrate heating and at 300 C exhibited magnetic domains typical of low anisotropy materials. These films were amorphous in the as-deposited state. The film deposited at 500 C was crystalline and displaid hard magnetic properties. This was reflected in the magnetic microstructure which showed interaction domains typical of highly textured and high magnetic anisotropy materials with a grain size below or equal to the critical single-domain particle limit. With increasing substrate temperature, the domain patterns of the annealed films became coarser, indicating higher degrees of texture.

  13. Highly controllable and green reduction of graphene oxide to flexible graphene film with high strength

    International Nuclear Information System (INIS)

    Wan, Wubo; Zhao, Zongbin; Hu, Han; Gogotsi, Yury; Qiu, Jieshan

    2013-01-01

    Graphical abstract: Highly controllable and green reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant. Self-assembly of the as-made CCG sheets results in a flexible CCG film, of which the tensile strength strongly depends on the deoxygenation degree of graphene sheets. - Highlights: • Graphene was synthesized by an effective and environmentally friendly approach. • We introduced a facile X-ray diffraction analysis method to investigate the reduction process from graphene oxide to graphene. • Flexible graphene films were prepared by self-assembly of the graphene sheets. • The strength of the graphene films depends on the reduction degree of graphene. - Abstract: Graphene film with high strength was fabricated by the assembly of graphene sheets derived from graphene oxide (GO) in an effective and environmentally friendly approach. Highly controllable reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant, in which the reduction process was monitored by XRD analysis and UV–vis absorption spectra. Self-assembly of the as-made CCG sheets results in a flexible CCG film. This method may open an avenue to the easy and scalable preparation of graphene film with high strength which has promising potentials in many fields where strong, flexible and electrically conductive films are highly demanded

  14. Silicon photonic IC embedded optical-PCB for high-speed interconnect application

    Science.gov (United States)

    Kallega, Rakshitha; Nambiar, Siddharth; Kumar, Abhai; Ranganath, Praveen; Selvaraja, Shankar Kumar

    2018-02-01

    Optical-Printed Circuit Board (PCB) is an emerging optical interconnect technology to bridge the gap between the board edge and the processing module. The technology so far has been used as a broadband transmitter using polymer waveguides in the PCB. In this paper, we report a Silicon Nitride based photonic IC embedded in the PCB along with the polymers as waveguides in the PCB. The motivation for such integration is to bring routing capability and to reduce the power loss due to broadcasting mode.

  15. Highly coercive thin-film nanostructures

    International Nuclear Information System (INIS)

    Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

    2005-01-01

    The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

  16. Mechanical characterization of zeolite low dielectric constant thin films by nanoindentation

    International Nuclear Information System (INIS)

    Johnson, Mark; Li Zijian; Wang Junlan; Ya, Yushan

    2007-01-01

    With semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant materials to replace the traditional dense SiO 2 insulators. In order to survive the multi-level integration process and provide reliable material and structure for the desired integrated circuits (IC) functions, the new low-k materials have to be mechanically strong and stable. Therefore the material selection and mechanical characterization are vital for the successful development of next generation low-k dielectrics. A new class of low-k materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus of the zeolite thin films is found to be significantly higher than that of other low-k materials with similar porosity and dielectric constants. Correlations between the mechanical, microstructural and electrical properties of the thin films are discussed in detail

  17. Extracción de cobre desde soluciones clorhídricas con LIX 860N-IC y LIX 84-IC

    Directory of Open Access Journals (Sweden)

    Navarro, Carlos María

    2001-08-01

    Full Text Available In this work, the extraction of copper from chloride solutions with two hydroxyoximes: 5- nonylsalicylaldoxime (LIX 860N-IC and 2-hydroxy-5-nonylacetophenona oxime (LIX 84-IC is discussed. The results showed that an increase in the acidity and an increase in the total concentration of chloride ions in the aqueous phase decreased significantly the extraction of copper as well as the extraction of iron for both extractants. This effect of the chloride ions can be explained by the formation of a series of chloro complexes of Cu(II and Fe(III in the aqueous phase. The effect of initial pH and total chloride concentration on the extraction of chloride by the organic phase suggests that LIX 860N-IC, and to a lesser extent LIX 84-IC, extract small amounts of the cationic complex, CuCl+. An increase in the concentration of chloride ions also produced a small decrease in the rate of copper extraction with both hydroxyoximes.

    En este trabajo se discute el estudio de la extracción de cobre desde soluciones clorhídricas con dos hidroxioximas: 5-nonilsalicilaldoxima (LIX 860N-IC, y 2-hidroxi-5 nonilacetofenona oxima (LIX 84-IC. Los resultados indicaron que al aumentar la acidez o aumentar la concentración de cloruro en la fase acuosa se produce una significativa disminución en la extracción de cobre y hierro con ambas hidroxioximas. Este efecto del ion cloruro se explica por la formación de varios clorocomplejos de Cu(II y Fe(III en la solución acuosa. El efecto del pH y la concentración total de cloruro en la extracción de cloruro sugiere que el LIX 860N-IC, y en menor grado el LIX 84-IC extraen pequeñas cantidades del catión monovalente, CuCl+. Se determinó también que un aumento en la concentración de cloruro en la solución acuosa produce una leve disminución en la velocidad de extracción del cobre con ambas hidroxioximas.

  18. High-coercive garnet films for thermo-magnetic recording

    International Nuclear Information System (INIS)

    Berzhansky, V N; Danishevskaya, Y V; Nedviga, A S; Milyukova, H T

    2016-01-01

    The possibility of using high-coercive of garnet films for thermo-magnetic recording is related with the presence of the metastable domain structure, which arises due to a significant mismatch of the lattice parameters of the film and the substrate. In the work the connection between facet crystal structure of elastically strained ferrite garnets films and the domain structure in them is established by methods of phase contrast and polarization microscopy. (paper)

  19. High-frequency applications of high-temperature superconductor thin films

    Science.gov (United States)

    Klein, N.

    2002-10-01

    High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz.

  20. High-frequency applications of high-temperature superconductor thin films

    International Nuclear Information System (INIS)

    Klein, N.

    2002-01-01

    High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz. (author)

  1. High-mobility ultrathin semiconducting films prepared by spin coating.

    Science.gov (United States)

    Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

    2004-03-18

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  2. Plasma polymerized high energy density dielectric films for capacitors

    Science.gov (United States)

    Yamagishi, F. G.

    1983-01-01

    High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

  3. Measuring IC following a semi-qualitative approach: An integrated framework

    Directory of Open Access Journals (Sweden)

    Chiara Verbano

    2013-09-01

    Full Text Available Purpose: Considering the different IC measures adopted in literature, the advantages of adopting semi-qualitative measures, and the lack of an agreed system for IC evaluation, the purpose of the paper is to analyse literature on IC measurement following a semi-qualitative approach, with the final intent to build an IC measurement framework. Design/methodology/approach: A literature review on IC measurement system, following a semi-qualitative approach, has been conducted and analysed, in order to re-organize and synthesize all items used in previous researches. Findings: An integrated framework emerged from this research and it constitutes an IC  measurement system, created gathering and integrating different items previously adopted in literature. Each of these variables has been organized in categories belonging to one of the three main components of IC: human capital, internal structural capital and relational capital. Originality/value: This research provides an integrated tool for IC evaluation, fostering toward a well agreed measurement system that is still lacking in literature. This framework could be interesting  not only for the academic world, which in the last two decades reveals increasing attention to IC, but also for the management of the companies, that with IC measurement can increase awareness of the firm’s value and develop internal auditing system to support the management of these assets. Moreover, it could be a useful instrument for the communication of IC value to the external stakeholders, as customers, suppliers and especially shareholders, and to investors and financial analysts.

  4. High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

    International Nuclear Information System (INIS)

    Jia, Haijun; Saha, Jhantu K.; Ohse, Naoyuki; Shirai, Hajime

    2007-01-01

    A high electron density (> 10 11 cm -3 ) and low electron temperature (1-2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of ∼ 65 A/s is achieved at a substrate temperature of 150 deg. C with a high Raman crystallinity and a low defect density of (1-2) x 10 16 cm -3 . Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of H α /SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity

  5. High magnetic field properties of Fe-pnictide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kurth, Fritz

    2015-11-20

    The recent discovery of high-temperature superconductivity in Fe-based materials triggered worldwide efforts to investigate their fundamental properties. Despite a lot of similarities to cuprates and MgB{sub 2}, important differences like near isotropic behaviour in contrast to cuprates and the peculiar pairing symmetry of the order parameter (OP) have been reported. The OP symmetry of Fe-based superconductors (FBS) was theoretically predicted to be of so-called s± state prior to various experimental works. Still, most of the experimental results favour the s± scenario; however, definitive evidence has not yet been reported. Although no clear understanding of the superconducting mechanisms yet exists, potential applications such as high-field magnets and Josephson devices have been explored. Indeed, a lot of reports about FBS tapes, wires, and even SQUIDs have been published to this date. In this thesis, the feasibility of high-field magnet applications of FBS is addressed by studying their transport properties, involving doped BaFe{sub 2}As{sub 2} (Ba-122) and LnFeAs(O,F) [Ln=Sm and Nd]. Particularly, it is important to study physical properties in a sample form (i.e. thin films) that is close to the conditions found in applications. However, the realisation of epitaxial FBS thin films is not an easy undertaking. Recent success in growing epitaxial FBS thin films opens a new avenue to delve into transport critical current measurements. The information obtained through this research will be useful for exploring high-field magnet applications. This thesis consists of 7 chapters: Chapter 1 describes the motivation of this study, the basic background of superconductivity, and a brief summary of the thin film growth of FBS. Chapter 2 describes experimental methods employed in this study. Chapter 3 reports on the fabrication of Co-doped Ba-122 thin films on various substrates. Particular emphasis lies on the discovery of fluoride substrates to be beneficial for

  6. Purification, crystallization and preliminary X-ray analysis of aminoglycoside-2′′-phosphotransferase-Ic [APH(2′′)-Ic] from Enterococcus gallinarum

    International Nuclear Information System (INIS)

    Byrnes, Laura J.; Badarau, Adriana; Vakulenko, Sergei B.; Smith, Clyde A.

    2008-01-01

    APH(2′′)-Ic is an enzyme that is responsible for high-level gentamicin resistance in E. gallinarum isolates. Crystals of the wild-type enzyme and three mutants have been prepared and a complete X-ray diffraction data set was collected to 2.15 Å resolution from an F108L crystal. Bacterial resistance to aminoglycoside antibiotics is primarily the result of deactivation of the drugs. Three families of enzymes are responsible for this activity, with one such family being the aminoglycoside phosphotransferases (APHs). The gene encoding one of these enzymes, aminoglycoside-2′′-phosphotransferase-Ic [APH(2′′)-Ic] from Enterococcus gallinarum, has been cloned and the wild-type protein (comprising 308 amino-acid residues) and three mutants that showed elevated minimum inhibitory concentrations towards gentamicin (F108L, H258L and a double mutant F108L/H258L) were expressed in Escherichia coli and subsequently purified. All APH(2′′)-Ic variants were crystallized in the presence of 14–20%(w/v) PEG 4000, 0.25 M MgCl 2 , 0.1 M Tris–HCl pH 8.5 and 1 mM Mg 2 GTP. The crystals belong to the monoclinic space group C2, with one molecule in the asymmetric unit. The approximate unit-cell parameters are a = 82.4, b = 54.2, c = 77.0 Å, β = 108.8°. X-ray diffraction data were collected to approximately 2.15 Å resolution from an F108L crystal at beamline BL9-2 at SSRL, Stanford, California, USA

  7. High Rate Micromechanical Behavior of Grafted Polymer Nanoparticle Films

    Science.gov (United States)

    Thomas, Edwin

    We report the ultra high strain rate behavior of films comprised of polymer grafted nanoparticles (NPs) and compare the results to homopolymer films. The films are formed by flow coating a suspension of polystyrene (PS) chains of 230 kg/mol grafted to 16nm diameter SiO2\\ at a graft density of 0.6 chains/nm2 resulting a film with 1 vol % SiO2. Films of 267 kg/mol PS were also flow coated and both films were impacted at velocities 350-700 ms-1 using 3.7 micron SiO2\\ projectiles to achieve increments in kinetic energy (KE) of 1:2:4. The KE of the projectiles before and after penetration was measured to determine the penetration energy. TEM and SEM suggest the projectile initially induces plastic flow due to the adiabatic temperature rise from impact. As the projectile deforms the film, the lower magnitude, biaxial stress state in the peripherial regions causes material microvoid formation and initiation of craze growth in the radial and tangential directions. The anchoring of the grafted polymer chains to the NPs increases the penetration energy relative to the pure homopolymer by 50% and the films capacity to delocalize the impact by 200%. These results suggest that highly grafted NP films may be useful in lightweight protection systems. In collaboration with Omri Fried, Olawale Lawal, Yang Jiao, Victor Hsaio, Thevamaran Ramathasan, Mujin Zhou, Richard Vaia.

  8. Small fields measurements with radiochromic films.

    Science.gov (United States)

    Gonzalez-Lopez, Antonio; Vera-Sanchez, Juan-Antonio; Lago-Martin, Jose-Domingo

    2015-01-01

    The small fields in radiotherapy are widely used due to the development of techniques such as intensity-modulated radiotherapy and stereotactic radio surgery. The measurement of the dose distributions for small fields is a challenge. A perfect dosimeter should be independent of the radiation energy and the dose rate and should have a negligible volume effect. The radiochromic (RC) film characteristics fit well to these requirements. However, the response of RC films and their digitizing processes present a significant spatial inhomogeneity problem. The present work uses a method for two-dimensional (2D) measurement with RC films based on the reduction of the spatial inhomogeneity of both the film and the film digitizing process. By means of registering and averaging several measurements of the same field, the inhomogeneities are mostly canceled. Measurements of output factors (OFs), dose profiles (in-plane and cross-plane), and 2D dose distributions are presented. The field sizes investigated are 0.5 × 0.5 cm(2), 0.7 × 0.7 cm(2), 1 × 1 cm(2), 2 × 2 cm(2), 3 × 3 cm(2), 6 × 6 cm(2), and 10 × 10 cm(2) for 6 and 15 MV photon beams. The OFs measured with the RC film are compared with the measurements carried out with a PinPoint ionization chamber (IC) and a Semiflex IC, while the measured transversal dose profiles were compared with Monte Carlo simulations. The results obtained for the OFs measurements show a good agreement with the values obtained from RC films and the PinPoint and Semiflex chambers when the field size is greater or equal than 2 × 2 cm(2). These agreements give confidence on the accuracy of the method as well as on the results obtained for smaller fields. Also, good agreement was found between the measured profiles and the Monte Carlo calculated profiles for the field size of 1 × 1 cm(2). We expect, therefore, that the presented method can be used to perform accurate measurements of small fields.

  9. Preparation and characterization of high-Tc superconducting thin films with high critical current densities

    International Nuclear Information System (INIS)

    Vase, P.

    1991-08-01

    The project was carried out in relation to possible cable and electronics applications of high-T c materials. Laser ablation was used as the deposition technique because of its stoichiometry conservation. Films were made in the YBa 2 Cu 3 O 7 compound due to its relatively simple stoichiometry compared to other High-T c compounds. Much attention was paid to the critical current density. A very high critical current density was reached. By using texture analysis by X-ray diffraction, it was found that films with high critical current densities were epitaxial, while films with low critical current densities contained several crystalline orientations. Four techniques for patterning the films were used - photo lithography and wet etch, laser ablation lithography, laser writing and electron beam lithography and ion milling. Sub-micron patterning has been demonstrated without degradation of the superconducting properties. The achieved patterning resolution is sufficient for preparation of many superconducting components. (AB)

  10. Graphene-based supercapacitor with carbon nanotube film as highly efficient current collector

    International Nuclear Information System (INIS)

    Notarianni, Marco; Liu, Jinzhang; Motta, Nunzio; Mirri, Francesca; Pasquali, Matteo

    2014-01-01

    Flexible graphene-based thin film supercapacitors were made using carbon nanotube (CNT) films as current collectors and graphene films as electrodes. The graphene sheets were produced by simple electrochemical exfoliation, while the graphene films with controlled thickness were prepared by vacuum filtration. The solid-state supercapacitor was made by using two graphene/CNT films on plastic substrates to sandwich a thin layer of gelled electrolyte. We found that the thin graphene film with thickness <1 μm can greatly increase the capacitance. Using only CNT films as electrodes, the device exhibited a capacitance as low as ∼0.4 mF cm −2 , whereas by adding a 360 nm thick graphene film to the CNT electrodes led to a ∼4.3 mF cm −2 capacitance. We experimentally demonstrated that the conductive CNT film is equivalent to gold as a current collector while it provides a stronger binding force to the graphene film. Combining the high capacitance of the thin graphene film and the high conductivity of the CNT film, our devices exhibited high energy density (8–14 Wh kg −1 ) and power density (250–450 kW kg −1 ). (paper)

  11. Measurements of simulated periodontal bone defects in inverted digital image and film-based radiograph: an in vitro study

    International Nuclear Information System (INIS)

    Molon, Rafael Scaf; Morais Camillo, Juliana Aparecida Najarro Dearo; Ferreira, Mauricio Goncalves; Loffredo, Leonor Castro Monteiro; Scaf, Gulnara; Sakakura, Celso Eduardo

    2012-01-01

    This study was performed to compare the inverted digital images and film-based images of dry pig mandibles to measure the periodontal bone defect depth. Forty 2-wall bone defects were made in the proximal region of the premolar in the dry pig mandibles. The digital and conventional radiographs were taken using a Schick sensor and Kodak F-speed intraoral film. Image manipulation (inversion) was performed using Adobe Photoshop 7.0 software. Four trained examiners made all of the radiographic measurements in millimeters a total of three times from the cementoenamel junction to the most apical extension of the bone loss with both types of images: inverted digital and film. The measurements were also made in dry mandibles using a periodontal probe and digital caliper. The Student's t-test was used to compare the depth measurements obtained from the two types of images and direct visual measurement in the dry mandibles. A significance level of 0.05 for a 95% confidence interval was used for each comparison. There was a significant difference between depth measurements in the inverted digital images and direct visual measurements (p>|t|=0.0039), with means of 6.29 mm (IC 95% :6.04-6.54) and 6.79 mm (IC 95% :6.45-7.11), respectively. There was a non-significant difference between the film-based radiographs and direct visual measurements (p>|t|=0.4950), with means of 6.64 mm(IC 95% :6.40-6.89) and 6.79 mm(IC 95% :6.45-7.11), respectively. The periodontal bone defect measurements in the inverted digital images were inferior to film-based radiographs, underestimating the amount of bone loss.

  12. Design and simulation analysis of a novel pressure sensor based on graphene film

    Science.gov (United States)

    Nie, M.; Xia, Y. H.; Guo, A. Q.

    2018-02-01

    A novel pressure sensor structure based on graphene film as the sensitive membrane was proposed in this paper, which solved the problem to measure low and minor pressure with high sensitivity. Moreover, the fabrication process was designed which can be compatible with CMOS IC fabrication technology. Finite element analysis has been used to simulate the displacement distribution of the thin movable graphene film of the designed pressure sensor under the different pressures with different dimensions. From the simulation results, the optimized structure has been obtained which can be applied in the low measurement range from 10hPa to 60hPa. The length and thickness of the graphene film could be designed as 100μm and 0.2μm, respectively. The maximum mechanical stress on the edge of the sensitive membrane was 1.84kPa, which was far below the breaking strength of the silicon nitride and graphene film.

  13. Usefulness and problems of film dosimetry in high energy radiotherapy

    International Nuclear Information System (INIS)

    Hirabayashi, Hisae

    1995-01-01

    Film dosimetry is a convenient and quick method of obtaining a set of high energy radiation isodose curves in the plane of the film, but it is an empirical method which presents some problems. Many authors have reported on film dosimetry for industrial films. Recently, the development of computerized densitometer systems, ready-pack films for radiotherapy and automatic film processors has helped improve the procedure. This paper reports our experiences regarding film dosimetry using the new materials, its usefulness in radiotherapy and some of technical problems encountered. The optical density value corresponding to a given dose depends upon the processing conditions, for XV-2 film, variation is about 4% when an automatic processor is used under controlled conditions. The Off-axis-ratios and the PDD in the perpendicular film plane agree well with the ion-chamber for photon and electron beams; by contrast, the PDD in the parallel film plane is significantly affected by variations in the phantom thickness, the type of film package and misalignment in phantom. But, bare films inserted into a cassette made of phantom material agree well for electron beams. Film dosimetry is effective and accurate at the edges of the field and for small fields, due to its high spatial resolution and rapid method. In addition, it is useful for electron beams OCR beam data input; for evaluating the input parameters for treatment planning systems; for quality assurance of the treatment equipment; and for preliminary clinical studies. Even when modern materials are used for film dosimetry, some technical problems will arise. Thus, to ensure the accuracy, certain precautions are required when setting conditions of film exposure and for quality control of the film processor. (author)

  14. Ultrahigh hardness and high electrical resistivity in nano-twinned, nanocrystalline high-entropy alloy films

    Science.gov (United States)

    Huo, Wenyi; Liu, Xiaodong; Tan, Shuyong; Fang, Feng; Xie, Zonghan; Shang, Jianku; Jiang, Jianqing

    2018-05-01

    Nano-twinned, nanocrystalline CoCrFeNi high-entropy alloy films were produced by magnetron sputtering. The films exhibit a high hardness of 8.5 GPa, the elastic modulus of 161.9 GPa and the resistivity as high as 135.1 μΩ·cm. The outstanding mechanical properties were found to result from the resistance of deformation created by nanocrystalline grains and nano-twins, while the electrical resistivity was attributed to the strong blockage effect induced by grain boundaries and lattice distortions. The results lay a solid foundation for the development of advanced films with structural and functional properties combined in micro-/nano-electronic devices.

  15. High-quality EuO thin films the easy way via topotactic transformation

    Science.gov (United States)

    Mairoser, Thomas; Mundy, Julia A.; Melville, Alexander; Hodash, Daniel; Cueva, Paul; Held, Rainer; Glavic, Artur; Schubert, Jürgen; Muller, David A.; Schlom, Darrell G.; Schmehl, Andreas

    2015-07-01

    Epitaxy is widely employed to create highly oriented crystalline films. A less appreciated, but nonetheless powerful means of creating such films is via topotactic transformation, in which a chemical reaction transforms a single crystal of one phase into a single crystal of a different phase, which inherits its orientation from the original crystal. Topotactic reactions may be applied to epitactic films to substitute, add or remove ions to yield epitactic films of different phases. Here we exploit a topotactic reduction reaction to provide a non-ultra-high vacuum (UHV) means of growing highly oriented single crystalline thin films of the easily over-oxidized half-metallic semiconductor europium monoxide (EuO) with a perfection rivalling that of the best films of the same material grown by molecular-beam epitaxy or UHV pulsed-laser deposition. As the technique only requires high-vacuum deposition equipment, it has the potential to drastically improve the accessibility of high-quality single crystalline films of EuO as well as other difficult-to-synthesize compounds.

  16. Highly Efficient and Reliable Transparent Electromagnetic Interference Shielding Film.

    Science.gov (United States)

    Jia, Li-Chuan; Yan, Ding-Xiang; Liu, Xiaofeng; Ma, Rujun; Wu, Hong-Yuan; Li, Zhong-Ming

    2018-04-11

    Electromagnetic protection in optoelectronic instruments such as optical windows and electronic displays is challenging because of the essential requirements of a high optical transmittance and an electromagnetic interference (EMI) shielding effectiveness (SE). Herein, we demonstrate the creation of an efficient transparent EMI shielding film that is composed of calcium alginate (CA), silver nanowires (AgNWs), and polyurethane (PU), via a facile and low-cost Mayer-rod coating method. The CA/AgNW/PU film with a high optical transmittance of 92% achieves an EMI SE of 20.7 dB, which meets the requirements for commercial shielding applications. A superior EMI SE of 31.3 dB could be achieved, whereas the transparent film still maintains a transmittance of 81%. The integrated efficient EMI SE and high transmittance are superior to those of most previously reported transparent EMI shielding materials. Moreover, our transparent films exhibit a highly reliable shielding ability in a complex service environment, with 98 and 96% EMI SE retentions even after 30 min of ultrasound treatment and 5000 bending cycles (1.5 mm radius), respectively. The comprehensive performance that is associated with the facile fabrication strategy imparts the CA/AgNW/PU film with great potential as an optimized EMI shielding material in emerging optoelectronic devices, such as flexible solar cells, displays, and touch panels.

  17. Aligned Carbon Nanotubes for High-Performance Films and Composites

    Science.gov (United States)

    Zhang, Liwen

    Carbon nanotubes (CNTs) with extraordinary properties and thus many potential applications have been predicted to be the best reinforcements for the next-generation multifunctional composite materials. Difficulties exist in transferring the most use of the unprecedented properties of individual CNTs to macroscopic forms of CNT assemblies. Therefore, this thesis focuses on two main goals: 1) discussing the issues that influence the performance of bulk CNT products, and 2) fabricating high-performance dry CNT films and composite films with an understanding of the fundamental structure-property relationship in these materials. Dry CNT films were fabricated by a winding process using CNT arrays with heights of 230 mum, 300 im and 360 mum. The structures of the as-produced films, as well as their mechanical and electrical properties were examined in order to find out the effects of different CNT lengths. It was found that the shorter CNTs synthesized by shorter time in the CVD furnace exhibited less structural defects and amorphous carbon, resulting in more compact packing and better nanotube alignment when made into dry films, thus, having better mechanical and electrical performance. A novel microcombing approach was developed to mitigate the CNT waviness and alignment in the dry films, and ultrahigh mechanical properties and exceptional electrical performance were obtained. This method utilized a pair of sharp surgical blades with microsized features at the blade edges as micro-combs to, for the first time, disentangle and straighten the wavy CNTs in the dry-drawn CNT sheet at single-layer level. The as-combed CNT sheet exhibited high level of nanotube alignment and straightness, reduced structural defects, and enhanced nanotube packing density. The dry CNT films produced by microcombing had a very high Young's modulus of 172 GPa, excellent tensile strength of 3.2 GPa, and unprecedented electrical conductivity of 1.8x10 5 S/m, which were records for CNT films or

  18. HI observations of the irregular galaxy IC 10

    International Nuclear Information System (INIS)

    Shostak, G.S.; Woerden, H. van

    1983-01-01

    The authors have made radio synthesis observations of the galaxy IC 10 with resolutions of 30 arcsec and 8 km/sec in the neutral hydrogen line using the Westerbork telescope. These confirm Shostak's (1974) result that, in the central region of IC 10, the velocity gradient is opposite to that later measured by single-dish in the outer regions. The suggestion by Cohen (1979) that the velocity gradient reversal is due to IC 10 being nearly face-on and warped is consistent with the new data. (Auth.)

  19. SUPER-LUMINOUS TYPE Ic SUPERNOVAE: CATCHING A MAGNETAR BY THE TAIL

    International Nuclear Information System (INIS)

    Inserra, C.; Smartt, S. J.; Jerkstrand, A.; Fraser, M.; Wright, D.; Smith, K.; Chen, T.-W.; Kotak, R.; Nicholl, M.; Valenti, S.; Pastorello, A.; Benetti, S.; Bresolin, F.; Kudritzki, R. P.; Burgett, W. S.; Chambers, K. C.; Flewelling, H.; Botticella, M. T.; Ergon, M.; Fynbo, J. P. U.

    2013-01-01

    We report extensive observational data for five of the lowest redshift Super-Luminous Type Ic Supernovae (SL-SNe Ic) discovered to date, namely, PTF10hgi, SN2011ke, PTF11rks, SN2011kf, and SN2012il. Photometric imaging of the transients at +50 to +230 days after peak combined with host galaxy subtraction reveals a luminous tail phase for four of these SL-SNe. A high-resolution, optical, and near-infrared spectrum from xshooter provides detection of a broad He I λ10830 emission line in the spectrum (+50 days) of SN2012il, revealing that at least some SL-SNe Ic are not completely helium-free. At first sight, the tail luminosity decline rates that we measure are consistent with the radioactive decay of 56 Co, and would require 1-4 M ☉ of 56 Ni to produce the luminosity. These 56 Ni masses cannot be made consistent with the short diffusion times at peak, and indeed are insufficient to power the peak luminosity. We instead favor energy deposition by newborn magnetars as the power source for these objects. A semi-analytical diffusion model with energy input from the spin-down of a magnetar reproduces the extensive light curve data well. The model predictions of ejecta velocities and temperatures which are required are in reasonable agreement with those determined from our observations. We derive magnetar energies of 0.4 ∼ 51 erg) ∼ ej (M ☉ ) ∼< 8.6. The sample of five SL-SNe Ic presented here, combined with SN 2010gx—the best sampled SL-SNe Ic so far—points toward an explosion driven by a magnetar as a viable explanation for all SL-SNe Ic.

  20. Water and Time’s Illusion: Two Purāṇic Tales from Bertolucci’s Films

    Directory of Open Access Journals (Sweden)

    Alessandro Cimino

    2012-12-01

    Full Text Available In Bernanrdo Bertolucci’s film Prima della Rivoluzione (1964 is narrated an Indian tale about time’s flimsiness; in 2002 the same film-maker realized a short on the same theme, Histoire d’eaux, for the collective cine-production Ten Minutes Older: The Cello. Nobody has never observed that same tales very similar to Bertolucci’s one in the up-mentioned films are narrated also in two ancient Sanskrit works: the Brahmapurāṇa and the Varāhapurāṇa. The cited tale in Bertolucci’s two films should prove the fact that time is an illusion, a false perception. In the up-mentioned Sanskrit works this theme is more complex, it would demonstrate that not only time’s perception doesn’t exist, but also that every perception is flimsy including everyone’s perception of life. The theoretical constant between all these literary and cine narrations stays at the particular water’s symbology containing the emblem of the continuous and, at the same time, fixed becoming. This essay ought to analyse the narrative and ideological evolution of the Indian tale, the stylistic variations found among the individual claims of the story, both in the Sanskrit literature and in Bertolucci’s cine-production, as well as the intermedial translations from a code to another one.

  1. Bio-medical CMOS ICs

    CERN Document Server

    Yoo, Hoi-Jun

    2011-01-01

    This book is based on a graduate course entitled, Ubiquitous Healthcare Circuits and Systems, that was given by one of the editors. It includes an introduction and overview to biomedical ICs and provides information on the current trends in research.

  2. Properties of indium tin oxide films deposited using High Target Utilisation Sputtering

    International Nuclear Information System (INIS)

    Calnan, S.; Upadhyaya, H.M.; Thwaites, M.J.; Tiwari, A.N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited on soda lime glass and polyimide substrates using an innovative process known as High Target Utilisation Sputtering (HiTUS). The influence of the oxygen flow rate, substrate temperature and sputtering pressure, on the electrical, optical and thermal stability properties of the films was investigated. High substrate temperature, medium oxygen flow rate and moderate pressure gave the best compromise of low resistivity and high transmittance. The lowest resistivity was 1.6 x 10 -4 Ω cm on glass while that on the polyimide was 1.9 x 10 -4 Ω cm. Substrate temperatures above 100 deg. C were required to obtain visible light transmittance exceeding 85% for ITO films on glass. The thermal stability of the films was mainly influenced by the oxygen flow rate and thus the initial degree of oxidation. The film resistivity was either unaffected or reduced after heating in vacuum but generally increased for oxygen deficient films when heated in air. The greatest increase in transmittance of oxygen deficient films occurred for heat treatment in air while that of the highly oxidised films was largely unaffected by heating in both media. This study has demonstrated the potential of HiTUS as a favourable deposition method for high quality ITO suitable for use in thin film solar cells

  3. A contact-lens-shaped IC chip technology

    International Nuclear Information System (INIS)

    Liu, Ching-Yu; Yang, Frank; Teng, Chih-Chiao; Fan, Long-Sheng

    2014-01-01

    We report on novel contact-lens-shaped silicon integrated circuit chip technology for applications such as forming a conforming retinal prosthesis. This is achieved by means of patterning thin films of high residual stress on top of a shaped thin silicon substrate. Several strategies are employed to achieve curvatures of various amounts. Firstly, high residual stress on a thin film makes a thin chip deform into a designed three-dimensional shape. Also, a series of patterned stress films and ‘petal-shaped’ chips were fabricated and analyzed. Large curvatures can also be formed and maintained by the packaging process of bonding the chips to constraining elements such as thin-film polymer ring structures. As a demonstration, a complementary metal oxide semiconductor transistor (CMOS) image-sensing retina chip is made into a contact-lens shape conforming to a human eyeball 12.5 mm in radius. This non-planar and flexible chip technology provides a desirable device surface interface to soft tissues or non-planar bio surfaces and opens up many other possibilities for biomedical applications. (paper)

  4. Surface qualities after chemical-mechanical polishing on thin films

    International Nuclear Information System (INIS)

    Fu, Wei-En; Lin, Tzeng-Yow; Chen, Meng-Ke; Chen, Chao-Chang A.

    2009-01-01

    Demands for substrate and film surface planarizations significantly increase as the feature sizes of Integrated Circuit (IC) components continue to shrink. Chemical Mechanical Polishing (CMP), incorporating chemical and mechanical interactions to planarize chemically modified surface layers, has been one of the major manufacturing processes to provide global and local surface planarizations in IC fabrications. Not only is the material removal rate a concern, the qualities of the CMP produced surface are critical as well, such as surface finish, defects and surface stresses. This paper is to examine the CMP produced surface roughness on tungsten or W thin films based on the CMP process conditions. The W thin films with thickness below 1000 nm on silicon wafer were chemical-mechanical polished at different down pressures and platen speeds to produce different surface roughness. The surface roughness measurements were performed by an atomic force microscope (DI D3100). Results show that the quality of surface finish (R a value) is determined by the combined effects of down pressures and platen speeds. An optimal polishing condition is, then, possible for selecting the down pressures and platen speeds.

  5. Highly Enhanced Raman Scattering on Carbonized Polymer Films.

    Science.gov (United States)

    Yoon, Jong-Chul; Hwang, Jongha; Thiyagarajan, Pradheep; Ruoff, Rodney S; Jang, Ji-Hyun

    2017-06-28

    We have discovered a carbonized polymer film to be a reliable and durable carbon-based substrate for carbon enhanced Raman scattering (CERS). Commercially available SU8 was spin coated and carbonized (c-SU8) to yield a film optimized to have a favorable Fermi level position for efficient charge transfer, which results in a significant Raman scattering enhancement under mild measurement conditions. A highly sensitive CERS (detection limit of 10 -8 M) that was uniform over a large area was achieved on a patterned c-SU8 film and the Raman signal intensity has remained constant for 2 years. This approach works not only for the CMOS-compatible c-SU8 film but for any carbonized film with the correct composition and Fermi level, as demonstrated with carbonized-PVA (poly(vinyl alcohol)) and carbonized-PVP (polyvinylpyrollidone) films. Our study certainly expands the rather narrow range of Raman-active material platforms to include robust carbon-based films readily obtained from polymer precursors. As it uses broadly applicable and cheap polymers, it could offer great advantages in the development of practical devices for chemical/bio analysis and sensors.

  6. Design of a High Performance Green-Mode PWM Controller IC with Smart Sensing Protection Circuits

    Directory of Open Access Journals (Sweden)

    Shen-Li Chen

    2014-08-01

    Full Text Available A design of high performance green-mode pulse-width-modulation (PWM controller IC with smart sensing protection circuits for the application of lithium-ion battery charger (1.52 V ~ 7.5 V is investigated in this paper. The protection circuits architecture of this system mainly bases on the lithium battery function and does for the system design standard of control circuit. In this work, the PWM controller will be with an automatic load sensing and judges the system operated in the operating mode or in the standby mode. Therefore, it reduces system’s power dissipation effectively and achieves the saving power target. In the same time, many protection sensing circuits such as: (1 over current protection (OCP and under current protection (UCP, (2 over voltage protection (OVP and under voltage protection (UVP, (3 loading determintion and short circuit protection (SCP, (4 over temperature protection (OTP, (5 VDD surge-spiking protection are included. Then, it has the characteristics of an effective monitoring the output loading and the harm prevention as a battery charging. Eventually, this green-mode pulse-width-modulation (PWM controller IC will be that the operation voltage is 3.3 V, the operation frequency is 0.98 MHz, and the output current range is from 454 mA to 500 mA. Meanwhile, the output convert efficiency is range from 74.8 % to 91 %, the power dissipation efficiency in green-mode is 25 %, and the operation temperature range is between -20 0C ~ 114 0C.

  7. Structural-optical study of high-dielectric-constant oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, M.M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Luchena, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Toro, R.G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Malandrino, G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Fragala, I.L. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Nigro, R. Lo [Istituto di Microelettronica e Microsistemi, IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy)

    2006-10-31

    High-k polycrystalline Pr{sub 2}O{sub 3} and amorphous LaAlO{sub 3} oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr{sub 2}O{sub 3} films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO{sub 3} films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.

  8. Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

    Science.gov (United States)

    Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

    2014-08-29

    Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

  9. The defective nature of ice Ic and its implications for atmospheric science

    Science.gov (United States)

    Kuhs, W. F.; Hansen, T. C.

    2009-04-01

    The possible atmospheric implication of ice Ic (cubic ice) has already been suggested some time ago in the context of snow crystal formation [1]. New findings from air-borne measurements in cirrus clouds and contrails have put ice Ic into the focus of interest to understand the so-called "supersaturation puzzle" [2,3,4,5]. Our recent microstructural work on ice Ic [6,7] appears to be highly relevant in this context. We have found that ice Ic is characterized by a complex stacking fault pattern, which changes as a function of temperature as well as time. Indeed, from our own [8] and other group's work [9] one knows that (in contrast to earlier believe) ice Ic can form up to temperatures at least as high as 240K - thus in the relevant range for cirrus clouds. We have good preliminary evidence that the "cubicity" (which can be related to stacking fault probabilities) as well as the particle size of ice Ic are the relevant parameters for this correlation. The "cubicity" of stacking faulty ice Ic (established by diffraction) correlates nicely with the increased supersaturation at decreasing temperatures observed in cirrus clouds and contrails, a fact, which may be considered as further evidence for the presence of ice Ic. Moreover, the stacking faults lead to kinks in the outer shapes of the minute ice Ic crystals as seen by cryo scanning electron microscopy (cryo-SEM); these defective sites are likely to play some role in heterogeneous reactions in the atmosphere. The cryo-SEM work suggests that stacking-faulty ice Ic has many more active centres for such reactions than the usually considered thermodynamically stable form, ice Ih. [1] T Kobayashi & T Kuroda (1987) Snow Crystals. In: Morphology of Crystals (ed. I Sunagawa), Terra Scientific Publishing, Tokyo, pp.649-743. [2] DM Murphy (2003) Dehydration in cold clouds is enhanced by a transition from from cubic to hexagonal ice. Geophys.Res.Lett.,30, 2230, doi:10.1029/2003GL018566. [3] RS Gao & 19 other authors (2004

  10. Current status of ITER I&C system as integration begins

    Energy Technology Data Exchange (ETDEWEB)

    Davis, William, E-mail: william.davis@iter.org [ITER Organisation, Route de Vinon-sur Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Wallander, Anders [ITER Organisation, Route de Vinon-sur Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Yonekawa, Izuru [Nippon Advanced Technology Ltd., 3129-45 Hibara Muramatsu, Tokai, Naka-gun, Ibaraki 319-1112 (Japan)

    2016-11-15

    Highlights: • The ITER I&C system is organisationally complicated and technically challenging. • Standard technologies for the ITER I&C systems have been selected. • Supply of non-standard technologies will cause serious issues. • Differing levels of design maturity of plant I&C systems is a serious challenge. • Systems are in the final stages of design and are being delivered to site. - Abstract: The ITER I&C system is organisationally complicated and technically challenging, and integrating its many sub-systems into a single coherent system is critical for the ITER project to meet its objectives. This paper explains the integration risks being faced now and anticipated in the near future. Standardisation initiatives by the ITER central team to mitigate these risks are described. The paper also presents the architecture of the ITER I&C system, the current status of design and manufacture key developments made in recent years, and the current and future activities of the central I&C teams. Finally, a short description is given of the plant I&C systems that will be delivered to ITER in the near future.

  11. Use of high-temperature superconducting films in superconducting bearings

    International Nuclear Information System (INIS)

    Cansiz, A.

    1999-01-01

    We have investigated the effect of high-temperature superconductor (HTS) films deposited on substrates that are placed above bulk HTSs in an attempt to reduce rotational drag in superconducting bearings composed of a permanent magnet levitated above the film/bulk HTS combination. According to the critical state model, hysteresis energy loss is inversely proportional to critical current density, J c , and because HTS films typically have much higher J c than that of bulk HTS, the film/bulk combination was expected to reduce rotational losses by at least one order of magnitude in the coefficient of fiction, which in turn is a measure of the hysteresis losses. We measured rotational losses of a superconducting bearing in a vacuum chamber and compared the losses with and without a film present. The experimental results showed that contrary to expectation, the rotational losses are increased by the film. These results are discussed in terms of flux drag through the film, as well as of the critical state model

  12. El contenido de los mensajes icónicos: El discurso icónico como totalidad (2)

    OpenAIRE

    Dr. Raymond Colle

    1999-01-01

    En el capítulo anterior, hemos hablado de los códigos icónicos de modo general, por cuanto tienen algunas características comunes, en particular el uso de figuras como factores de los significantes. Sin embargo, como lo hemos señalado al final, no todos se construyen ni articulan de la misma manera. Tal como las lenguas son muchas y los códigos lingüísticos se rigen por diferentes reglas -aunque sobre la base de fonemas unidos secuencialmente-, los códigos icónicos son también variados y regi...

  13. Measurements of simulated periodontal bone defects in inverted digital image and film-based radiograph: an in vitro study

    Energy Technology Data Exchange (ETDEWEB)

    Molon, Rafael Scaf; Morais Camillo, Juliana Aparecida Najarro Dearo; Ferreira, Mauricio Goncalves; Loffredo, Leonor Castro Monteiro; Scaf, Gulnara [Araraquara Dental School, Universidade Estadual Paulista, Sao Paulo (Brazil); Sakakura, Celso Eduardo [Barretos Dental School, Barretos Educational Fundation, Sao Paulo (Brazil)

    2012-09-15

    This study was performed to compare the inverted digital images and film-based images of dry pig mandibles to measure the periodontal bone defect depth. Forty 2-wall bone defects were made in the proximal region of the premolar in the dry pig mandibles. The digital and conventional radiographs were taken using a Schick sensor and Kodak F-speed intraoral film. Image manipulation (inversion) was performed using Adobe Photoshop 7.0 software. Four trained examiners made all of the radiographic measurements in millimeters a total of three times from the cementoenamel junction to the most apical extension of the bone loss with both types of images: inverted digital and film. The measurements were also made in dry mandibles using a periodontal probe and digital caliper. The Student's t-test was used to compare the depth measurements obtained from the two types of images and direct visual measurement in the dry mandibles. A significance level of 0.05 for a 95% confidence interval was used for each comparison. There was a significant difference between depth measurements in the inverted digital images and direct visual measurements (p>|t|=0.0039), with means of 6.29 mm (IC{sub 95%}:6.04-6.54) and 6.79 mm (IC{sub 95%}:6.45-7.11), respectively. There was a non-significant difference between the film-based radiographs and direct visual measurements (p>|t|=0.4950), with means of 6.64 mm(IC{sub 95%}:6.40-6.89) and 6.79 mm(IC{sub 95%}:6.45-7.11), respectively. The periodontal bone defect measurements in the inverted digital images were inferior to film-based radiographs, underestimating the amount of bone loss.

  14. Bioinspired Superhydrophobic Highly Transmissive Films for Optical Applications.

    Science.gov (United States)

    Vüllers, Felix; Gomard, Guillaume; Preinfalk, Jan B; Klampaftis, Efthymios; Worgull, Matthias; Richards, Bryce; Hölscher, Hendrik; Kavalenka, Maryna N

    2016-11-01

    Inspired by the transparent hair layer on water plants Salvinia and Pistia, superhydrophobic flexible thin films, applicable as transparent coatings for optoelectronic devices, are introduced. Thin polymeric nanofur films are fabricated using a highly scalable hot pulling technique, in which heated sandblasted steel plates are used to create a dense layer of nano- and microhairs surrounding microcavities on a polymer surface. The superhydrophobic nanofur surface exhibits water contact angles of 166 ± 6°, sliding angles below 6°, and is self-cleaning against various contaminants. Additionally, subjecting thin nanofur to argon plasma reverses its surface wettability to hydrophilic and underwater superoleophobic. Thin nanofur films are transparent and demonstrate reflection values of less than 4% for wavelengths ranging from 300 to 800 nm when attached to a polymer substrate. Moreover, used as translucent self-standing film, the nanofur exhibits transmission values above 85% and high forward scattering. The potential of thin nanofur films for extracting substrate modes from organic light emitting diodes is tested and a relative increase of the luminous efficacy of above 10% is observed. Finally, thin nanofur is optically coupled to a multicrystalline silicon solar cell, resulting in a relative gain of 5.8% in photogenerated current compared to a bare photovoltaic device. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

    Science.gov (United States)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-08-01

    High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

  16. Structural changes and intermolecular interactions of filled ice Ic structure for hydrogen hydrate under high pressure

    International Nuclear Information System (INIS)

    Machida, S; Hirai, H; Kawamura, T; Yamamoto, Y; Yagi, T

    2010-01-01

    High-pressure experiments of hydrogen hydrate were performed using a diamond anvil cell under conditions of 0.1-44.2 GPa and at room temperature. Also, high pressure Raman studies of solid hydrogen were performed in the pressure range of 0.1-43.7 GPa. X-ray diffractometry (XRD) for hydrogen hydrate revealed that a known high-pressure structure, filled ice Ic structure, of hydrogen hydrate transformed to a new high-pressure structure at approximately 35-40 GPa. A comparison of the Raman spectroscopy of a vibron for hydrogen molecules between hydrogen hydrate and solid hydrogen revealed that the extraction of hydrogen molecules from hydrogen hydrate occurred above 20 GPa. Also, the Raman spectra of a roton revealed that the rotation of hydrogen molecules in hydrogen hydrate was suppressed at around 20 GPa and that the rotation recovered under higher pressure. These results indicated that remarkable intermolecular interactions in hydrogen hydrate between neighboring hydrogen molecules and between guest hydrogen molecules and host water molecules might occur. These intermolecular interactions could produce the stability of hydrogen hydrate.

  17. Native oxidation of ultra high purity Cu bulk and thin films

    International Nuclear Information System (INIS)

    Iijima, J.; Lim, J.-W.; Hong, S.-H.; Suzuki, S.; Mimura, K.; Isshiki, M.

    2006-01-01

    The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of -50 V (IBD Cu film at V s = -50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V s = 0 V) showed lower oxidation resistance. The growth of Cu 2 O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V s = 0 and -50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu 2 O layer after a critical time

  18. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    Science.gov (United States)

    Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

    1988-11-01

    It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

  19. Characterization of the microwave properties of superconducting films with high transition temperature

    International Nuclear Information System (INIS)

    Richter, W.; Klinger, M.; Daginnus, M.

    1989-01-01

    In the meantime high quality Y-Ba-Cu-O thin films were produced. The latest results show, that its surface resistances are clearly lower than the values of copper, measured at a temperature of 77 K and up to frequencies of 86 GHz. This examination had the aim to produce high-T c films with a simple and low cost method, to use them as transmission lines at frequencies up to 30 GHz and above. A screen printing process was investigated, and high-T c thick films were fabricated on several substrates. Superconducting transition temperatures up to 80 K (dc zero resistance) were obtained. The films showed no complete magnetic shielding, and its microwave surface resistances were clearly higher than that ones for copper. The a. c. Josephson effect was proved with granular structures of bulk Y-Ba-Cu-O material and with screen printed thick films. Because of its high surface resistances, these thick films are unsuitable for the use as transmission lines at high frequencies. However, the a.c. Josephson effect can be used to manufacture microwave sensors in bulk Y-Ba-Cu-O and screen printed films of Y-Ba-Cu-O, which have a favourable geometric structure. (orig.) With 16 refs., 2 tabs., 24 figs [de

  20. Fermi Non-detections of Four X-Ray Jet Sources and Implications for the IC/CMB Mechanism

    Science.gov (United States)

    Breiding, Peter; Meyer, Eileen T.; Georganopoulos, Markos; Keenan, M. E.; DeNigris, N. S.; Hewitt, Jennifer

    2017-11-01

    Since its launch in 1999, the Chandra X-ray observatory has discovered several dozen X-ray jets associated with powerful quasars. In many cases, the X-ray spectrum is hard and appears to come from a second spectral component. The most popular explanation for the kpc-scale X-ray emission in these cases has been inverse-Compton (IC) scattering of Cosmic Microwave Background (CMB) photons by relativistic electrons in the jet (the IC/CMB model). Requiring the IC/CMB emission to reproduce the observed X-ray flux density inevitably predicts a high level of gamma-ray emission, which should be detectable with the Fermi Large Area Telescope (LAT). In previous work, we found that gamma-ray upper limits from the large-scale jets of 3C 273 and PKS 0637-752 violate the predictions of the IC/CMB model. Here, we present Fermi/LAT flux density upper limits for the X-ray jets of four additional sources: PKS 1136-135, PKS 1229-021, PKS 1354+195, and PKS 2209+080. We show that these limits violate the IC/CMB predictions at a very high significance level. We also present new Hubble Space Telescope observations of the quasar PKS 2209+080 showing a newly detected optical jet, and Atacama Large Millimeter/submillimeter Array band 3 and 6 observations of all four sources, which provide key constraints on the spectral shape that enable us to rule out the IC/CMB model.

  1. PREFACE: 2nd International Conference on Competitive Materials and Technological Processes (IC-CMTP2)

    Science.gov (United States)

    László, Gömze A.

    2013-12-01

    Competitiveness is one of the most important factors in our life and it plays a key role in the efficiency both of organizations and societies. The more scientifically supported and prepared organizations develop more competitive materials with better physical, chemical and biological properties and the leading companies apply more competitive equipment and technology processes. The aims of the 2nd International Conference on Competitive Materials and Technology Processes (ic-cmtp2) are the following: Promote new methods and results of scientific research in the fields of material, biological, environmental and technology sciences; Change information between the theoretical and applied sciences as well as technical and technological implantations. Promote the communication between the scientist of different nations, countries and continents. Among the major fields of interest are materials with extreme physical, chemical, biological, medical, thermal, mechanical properties and dynamic strength; including their crystalline and nano-structures, phase transformations as well as methods of their technological processes, tests and measurements. Multidisciplinary applications of materials science and technological problems encountered in sectors like ceramics, glasses, thin films, aerospace, automotive and marine industry, electronics, energy, construction materials, medicine, biosciences and environmental sciences are of particular interest. In accordance to the program of the conference ic-cmtp2, more than 250 inquiries and registrations from different organizations were received. Researchers from 36 countries in Asia, Europe, Africa, North and South America arrived at the venue of conference. Including co-authors, the research work of more than 500 scientists are presented in this volume. Professor Dr Gömze A László Chair, ic-cmtp2 The PDF also contains lists of the boards, session chairs and sponsors.

  2. High temperature polymer film dielectrics for aerospace power conditioning capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Venkat, Narayanan, E-mail: venkats3@gmail.co [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Dang, Thuy D. [Air Force Research Laboratory-Nanostructured and Biological Materials Branch (AFRL/RXBN) (United States); Bai Zongwu; McNier, Victor K. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); DeCerbo, Jennifer N. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States); Tsao, B.-H. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Stricker, Jeffery T. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States)

    2010-04-15

    Polymer dielectrics are the preferred materials of choice for capacitive energy-storage applications because of their potential for high dielectric breakdown strengths, low dissipation factors and good dielectric stability over a wide range of frequencies and temperatures, despite having inherently lower dielectric constants relative to ceramic dielectrics. They are also amenable to large area processing into films at a relatively lower cost. Air Force currently has a strong need for the development of compact capacitors which are thermally robust for operation in a variety of aerospace power conditioning applications. While such applications typically use polycarbonate (PC) dielectric films in wound capacitors for operation from -55 deg. C to 125 deg. C, future power electronic systems would require the use of polymer dielectrics that can reliably operate up to elevated temperatures in the range of 250-350 deg. C. The focus of this research is the generation and dielectric evaluation of metallized, thin free-standing films derived from high temperature polymer structures such as fluorinated polybenzoxazoles, post-functionalized fluorinated polyimides and fluorenyl polyesters incorporating diamond-like hydrocarbon units. The discussion is centered mainly on variable temperature dielectric measurements of film capacitance and dissipation factor and the effects of thermal cycling, up to a maximum temperature of 350 deg. C, on film dielectric performance. Initial studies clearly point to the dielectric stability of these films for high temperature power conditioning applications, as indicated by their relatively low temperature coefficient of capacitance (TCC) (approx2%) over the entire range of temperatures. Some of the films were also found to exhibit good dielectric breakdown strengths (up to 470 V/mum) and a film dissipation factor of the order of <0.003 (0.3%) at the frequency of interest (10 kHz) for the intended applications. The measured relative dielectric

  3. ic-cmtp3: 3rd International Conference on Competitive Materials and Technology Processes

    Science.gov (United States)

    2016-04-01

    Competitiveness is one of the most important factors in our lives and it plays a key role in the efficiency both of organizations and societies. The more scientifically advanced and prepared organizations develop more competitive materials with better physical, chemical, and biological properties, and the leading companies apply more competitive equipment and technological processes. The aims of the 3rd International Conference on Competitive Materials and Technology Processes (ic-cmtp3), and the 1st International Symposium on Innovative Carbons and Carbon Based Materials (is-icbm1) and the 1st International Symposium on Innovative Construction Materials (is-icm1) organized alongside are the following: —Promote new methods and results of scientific research in the fields of material, biological, environmental and technological sciences; —Exchange information between the theoretical and applied sciences as well as technical and technological implementations; —Promote communication and collaboration between the scientists, researchers and engineers of different nations, countries and continents. Among the major fields of interest are advanced and innovative materials with competitive characteristics, including mechanical, physical, chemical, biological, medical and thermal, properties and extreme dynamic strength. Their crystalline, nano - and micro-structures, phase transformations as well as details of their technological processes, tests and measurements are also in the focus of the ic-cmtp3 conference and the is-scbm1 and is-icm1 symposia. Multidisciplinary applications of material science and the technological problems encountered in sectors like ceramics, glasses, thin films, aerospace, automotive and marine industries, electronics, energy, construction materials, medicine, biosciences and environmental sciences are of particular interest. In accordance with the program of the ic-cmtp3 conference and is-icbm1 and is-icm1 symposia we have received more

  4. Fracture toughness of silicon nitride thin films of different thicknesses as measured by bulge tests

    International Nuclear Information System (INIS)

    Merle, B.; Goeken, M.

    2011-01-01

    A bulge test setup was used to determine the fracture toughness of amorphous low-pressure chemical vapor deposited (LPCVD) silicon nitride films with various thicknesses in the range 40-108 nm. A crack-like slit was milled in the center of each free-standing film with a focused ion beam, and the membrane was deformed in the bulge test until failure occurred. The fracture toughness K IC was calculated from the pre-crack length and the stress at failure. It is shown that the membrane is in a transition state between pure plane-stress and plane-strain which, however, had a negligible influence on the measurement of the fracture toughness, because of the high brittleness of silicon nitride and its low Young's modulus over yield strength ratio. The fracture toughness K IC was found to be constant at 6.3 ± 0.4 MPa m 1/2 over the whole thickness range studied, which compares well with bulk values. This means that the fracture toughness, like the Young's modulus, is a size-independent quantity for LPCVD silicon nitride. This presumably holds true for all amorphous brittle ceramic materials.

  5. Profiles of the N II 6584 A line over the giant H II regions IC 1318b and c, NGC 7000 and IC 5070. 2

    Energy Technology Data Exchange (ETDEWEB)

    Canto, J; Johnson, P G; Meaburn, J; Mikhail, J S; Terrett, D L; White, N J [Manchester Univ. (UK). Dept of Astronomy

    1979-06-01

    Previously (Paper I) large-scale splitting of the (N II) line was discovered over an area of IC 1318b. The motions of the ionized material have now been mapped over a much larger region of this nebula and also IC 1318c. The splitting reaches a maximum value of 53 km/s over the faintest regions of IC 1318b and occurs over an area approximately > 20 pc across. However, few split (N II) lines were found over IC 1318c, but the motions of this whole ionized and neutral complex have been shown to be closely related. Wind-driven flows along neutral and ionized shells are proposed to explain the observations. Similar measurements have also been made on either side of the dark lane separating NGC 7000 from IC 5070.

  6. Non-invasive pre-lens tear film assessment with high-speed videokeratoscopy.

    Science.gov (United States)

    Llorens-Quintana, Clara; Mousavi, Maryam; Szczesna-Iskander, Dorota; Iskander, D Robert

    2018-02-01

    To evaluate the effect of two types of daily contact lenses (delefilcon A and omafilcon A) on the tear film and establish whether it is dependent on pre-corneal tear film characteristics using a new method to analyse high-speed videokeratoscopy recordings, as well as to determine the sensitivity of the method in differentiating between contact lens materials on eye. High-speed videokeratoscopy recordings were analysed using a custom made automated algorithm based on a fractal dimension approach that provides a set of parameters directly related to tear film stability. Fifty-four subjects participated in the study. Baseline measurements, in suppressed and natural blinking conditions, were taken before subjects were fitted with two different daily contact lenses and after four hours of contact lens wear. The method for analysing the stability of the tear film provides alternative parameters to the non-invasive break up time to assess the quality of the pre-corneal and pre-lens tear film. Both contact lenses significantly decreased the quality of the tear film in suppressed and natural blinking conditions (pfilm characteristics were not correlated with the decrease in pre-lens tear film quality. High-speed videokeratoscopy equipped with an automated method to analyse the dynamics of the tear film is able to distinguish between contact lens materials in vivo. Incorporating the assessment of pre-lens tear film to the clinical practice could aid improving contact lens fitting and understand contact lens comfort. Copyright © 2017 British Contact Lens Association. Published by Elsevier Ltd. All rights reserved.

  7. Interband cascade (IC) photovoltaic (PV) architecture for PV devices

    Science.gov (United States)

    Yang, Rui Q.; Tian, Zhaobing; Mishima, Tetsuya D.; Santos, Michael B.; Johnson, Matthew B.; Klem, John F.

    2015-10-20

    A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.

  8. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    International Nuclear Information System (INIS)

    Sandstrom, R.L.; Giess, E.A.; Gallagher, W.J.; Segmueller, A.; Cooper, E.I.; Chisholm, M.F.; Gupta, A.; Shinde, S.; Laibowitz, R.B.

    1988-01-01

    We demonstrate that lanthanum gallate (LaGaO 3 ) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa 2 Cu 3 O/sub 7-//sub x/, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε≅25) and low dielectric losses. Epitaxial YBa 2 Cu 3 O/sub 7-//sub x/ films grown on LaGaO 3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K

  9. STAR FORMATION ASSOCIATED WITH THE SUPERNOVA REMNANT IC443

    International Nuclear Information System (INIS)

    Xu Jinlong; Wang Junjie; Miller, Martin

    2011-01-01

    We have performed submillimeter and millimeter observations in CO lines toward supernova remnant (SNR) IC443. The CO molecular shell coincides well with the partial shell of the SNR detected in radio continuum observations. Broad emission lines and three 1720 MHz OH masers were detected in the CO molecular shell. The present observations have provided further evidence in support of the interaction between the SNR and the adjoining molecular clouds (MCs). The total mass of the MCs is 9.26 x 10 3 M sun . The integrated CO line intensity ratio (R I CO(3-2) /I CO(2-1) ) for the whole MC is between 0.79 and 3.40. The average value is 1.58, which is much higher than previous measurements of individual Galactic MCs. Higher line ratios imply that shocks have driven into the MCs. We conclude that high R I CO(3-2) /I CO(2-1) is identified as a good signature of the SNR-MC interacting system. Based on the IRAS Point Source Catalog and the Two Micron All Sky Survey near-infrared database, 12 protostellar object and 1666 young stellar object (YSO) candidates (including 154 classical T Tauri stars and 419 Herbig Ae/Be stars) are selected. In the interacting regions, the significant enhancement of the number of protostellar objects and YSOs indicates the presence of some recently formed stars. After comparing the characteristic timescales of star formation with the age of IC443, we conclude that the protostellar objects and YSO candidates are not triggered by IC443. For the age of the stellar winds shell, we have performed our calculation on the basis of a stellar wind shell expansion model. The results and analysis suggest that the formation of these stars may be triggered by the stellar winds of the IC443 progenitor.

  10. High temperature superconducting films by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Kadin, A.M.; Ballentine, P.H.

    1989-01-01

    The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

  11. High quality antireflective ZnS thin films prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    Tec-Yam, S.; Rojas, J.; Rejón, V.; Oliva, A.I.

    2012-01-01

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl 2 , NH 4 NO 3 , and CS(NH 2 ) 2 were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 °C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300–800 nm wavelength range, and a reflectance below 25% in the UV–Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: ► High quality ZnS thin films were prepared by chemical bath deposition (CBD). ► Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. ► Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  12. High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

    Science.gov (United States)

    Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.

    2018-05-01

    Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.

  13. Scalable IC Platform for Smart Cameras

    Directory of Open Access Journals (Sweden)

    Harry Broers

    2005-08-01

    Full Text Available Smart cameras are among the emerging new fields of electronics. The points of interest are in the application areas, software and IC development. In order to reduce cost, it is worthwhile to invest in a single architecture that can be scaled for the various application areas in performance (and resulting power consumption. In this paper, we show that the combination of an SIMD (single-instruction multiple-data processor and a general-purpose DSP is very advantageous for the image processing tasks encountered in smart cameras. While the SIMD processor gives the very high performance necessary by exploiting the inherent data parallelism found in the pixel crunching part of the algorithms, the DSP offers a friendly approach to the more complex tasks. The paper continues to motivate that SIMD processors have very convenient scaling properties in silicon, making the complete, SIMD-DSP architecture suitable for different application areas without changing the software suite. Analysis of the changes in power consumption due to scaling shows that for typical image processing tasks, it is beneficial to scale the SIMD processor to use the maximum level of parallelism available in the algorithm if the IC supply voltage can be lowered. If silicon cost is of importance, the parallelism of the processor should be scaled to just reach the desired performance given the speed of the silicon.

  14. Preparation of high-pressure phase boron nitride films by physical vapor deposition

    CERN Document Server

    Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

    2002-01-01

    The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

  15. A nanoporous MXene film enables flexible supercapacitors with high energy storage.

    Science.gov (United States)

    Fan, Zhimin; Wang, Youshan; Xie, Zhimin; Xu, Xueqing; Yuan, Yin; Cheng, Zhongjun; Liu, Yuyan

    2018-05-14

    MXene films are attractive for use in advanced supercapacitor electrodes on account of their ultrahigh density and pseudocapacitive charge storage mechanism in sulfuric acid. However, the self-restacking of MXene nanosheets severely affects their rate capability and mass loading. Herein, a free-standing and flexible modified nanoporous MXene film is fabricated by incorporating Fe(OH)3 nanoparticles with diameters of 3-5 nm into MXene films and then dissolving the Fe(OH)3 nanoparticles, followed by low calcination at 200 °C, resulting in highly interconnected nanopore channels that promote efficient ion transport without compromising ultrahigh density. As a result, the modified nanoporous MXene film presents an attractive volumetric capacitance (1142 F cm-3 at 0.5 A g-1) and good rate capability (828 F cm-3 at 20 A g-1). Furthermore, it still displays a high volumetric capacitance of 749 F cm-3 and good flexibility even at a high mass loading of 11.2 mg cm-2. Therefore, this flexible and free-standing nanoporous MXene film is a promising electrode material for flexible, portable and compact storage devices. This study provides an efficient material design for flexible energy storage devices possessing high volumetric capacitance and good rate capability even at a high mass loading.

  16. Amorphous intergranular films in silicon nitride ceramics quenched from high temperatures

    International Nuclear Information System (INIS)

    Cinibulk, M.K.; Kleebe, H.; Schneider, G.A.; Ruehle, M.

    1993-01-01

    High-temperature microstructure of an MgO-hot-pressed Si 3 N 4 and a Yb 2 O 3 + Al 2 O 3 -sintered/annealed Si 3 N 4 were obtained by quenching thin specimens from temperatures between 1,350 and 1,550 C. Quenching materials from 1,350 C produced no observable exchanges in the secondary phases at triple-grain junctions or along grain boundaries. Although quenching from temperatures of ∼1,450 C also showed no significant changes in the general microstructure or morphology of the Si 3 N 4 grains, the amorphous intergranular film thickness increased substantially from an initial ∼1 nm in the slowly cooled material to 1.5--9 nm in the quenched materials. The variability of film thickness in a given material suggests a nonequilibrium state. Specimens quenched from 1,550 C revealed once again thin (1-nm) intergranular films at all high-angle grain boundaries, indicating an equilibrium condition. The changes observed in intergranular-film thickness by high-resolution electron microscopy can be related to the eutectic temperature of the system and to diffusional and viscous processes occurring in the amorphous intergranular film during the high-temperature anneal prior to quenching

  17. Preparation of high quality superconducting thin MgB2 films for electronics

    International Nuclear Information System (INIS)

    Surdu, Andrei; Zdravkov, Vladimir; Sidorenko, Anatolie; Rossolenko, Anna; Ryazanov, Valerii; Bdikin, Igor; Kroemer, Oliver; Nold, Eberhard; Koch, Thomas; Schimmel, Thomas

    2007-01-01

    In this work we report the growth of high-Tc MgB 2 smooth films which are prepared in a two-step process: 1) deposition of the precursor films and 2) their annealing in Mg vapor with a specially designed, reusable reactor. Our method opens perspectives for the use of MgB 2 films in microelectronics, especially for high-frequency applications. (authors)

  18. Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

    2009-01-01

    Titanium-doped cadmium oxide thin films were deposited on quartz substrate by pulsed laser deposition technique. The effect of substrate temperature on structural, optical and electrical properties was studied. The films grown at high temperature show (2 0 0) preferred orientation, while films grown at low temperature have both (1 1 1) and (2 0 0) orientation. These films are highly transparent (63-79%) in visible region, and transmittance of the films depends on growth temperature. The band gap of the films varies from 2.70 eV to 2.84 eV for various temperatures. It is observed that resistivity increases with growth temperature after attaining minimum at 150 deg. C, while carrier concentration continuously decreases with temperature. The low resistivity, high transmittance and wide band gap titanium-doped CdO films could be an excellent candidate for future optoelectronic and photovoltaic applications.

  19. Considerations in applying on-line IC techniques to BWR's

    International Nuclear Information System (INIS)

    Kaleda, R.J.

    1992-01-01

    Ion-Chromatography (IC) has moved from its traditional role as a laboratory analytical tool to a real time, dynamic, on-line measurement device to follow ppb and sub-ppb concentrations of deleterious impurities in nuclear power plants. Electric Power Research Institute (EPRI), individual utilities, and industry all have played significant roles in effecting the transition. This paper highlights considerations and the evolution in current on-line Ion Chromatography systems. The first applications of on-line techniques were demonstrated by General Electric (GE) under EPRI sponsorship at Rancho Seco (1980), Calvert Cliffs, and McGuire nuclear units. The primary use was for diagnostic purposes. Today the on-line IC applications have been expanded to include process control and routine plant monitoring. Current on-line IC's are innovative in design, promote operational simplicity, are modular for simplified maintenance and repair, and use field-proven components which enhance reliability. Conductivity detection with electronic or chemical suppression and spectrometric detection techniques are intermixed in applications. Remote multi-point sample systems have addressed memory effects. Early applications measured ionic species in the part per billion range. Today reliable part per trillion measurements are common for on-line systems. Current systems are meeting the challenge of EPRI guideline requirements. Today's on-line IC's, with programmed sampling systems, monitor fluid streams throughout a power plant, supplying data that can be trended, stored and retrieved easily. The on-line IC has come of age. Many technical challenges were overcome to achieve today's IC

  20. Preparation of Ta(C)N films by pulsed high energy density plasma

    Energy Technology Data Exchange (ETDEWEB)

    Feng Wenran [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Chen Guangliang [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Zhang Yan [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Gu Weichao [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Zhang Guling [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Niu Erwu [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Liu Chizi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Yang Size [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China)

    2007-04-07

    The pulsed high energy density plasma (PHEDP) is generated in the working gas due to a high-voltage high-current discharge, within a coaxial gun. In PHEDP surface modification, discharge is applied for preparing the amorphous and nanostructured high-melting materials as thin films deposited on various substrates. In this investigation, Ta(C)N films were deposited using PHEDP on stainless steel. Pure tantalum and graphite were used as the inner and outer electrodes of the PHEDP coaxial gun, respectively. Nitrogen was used as the working gas and also one of the reactants. Preliminary study on the films prepared under different conditions shows that the formation of Ta(C)N is drastically voltage dependent. At lower gun voltage, no Ta(C)N was detected in the films; when the gun voltage reaches or exceeds 3.0 kV, Ta(C)N occurred. The films are composed of densely stacked nanocrystallines with diameter less than 30 nm, and some grains are within 10 nm in diameter.

  1. High quality uniform YBCO film growth by the metalorganic deposition using trifluoroacetates

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S.S., E-mail: wangssh@tsinghua.edu.cn [Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Beihang University), Ministry of Education, Beijing 100191 (China); Beijing Dingchen Superconducting Technology Co., Ltd., Beijing 100084 (China); Zhang, Z.L. [Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Beihang University), Ministry of Education, Beijing 100191 (China); Wang, L. [Applied superconductivity research center, Department of Physics, Tsinghua University, Beijing 100084 (China); Gao, L.K.; Liu, J. [Beijing Dingchen Superconducting Technology Co., Ltd., Beijing 100084 (China)

    2017-03-15

    Highlights: • High quality double-sided YBCO films are fabricated on LaAlO3 substrates by TFA-MOD method with diameters up to 2 in. • Large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive Jc in excess of 6 MA/cm{sup 2} and low R{sub s} (10 GHz) of 0.3 mΩ at 77 K were obtained. • It will greatly promoted the research and applications of large-area YBCO films by chemical solution method. - Abstract: A need exists for the large-area superconducting YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) films with high critical current density for microwave communication and/or electric power applications. Trifluoroacetic metalorganic (TFA-MOD) method is a promising low cost technique for large-scale production of YBCO films, because it does not need high vacuum device and is easily applicable to substrates of various shape and size. In this paper, double-sided YBCO films with maximum 2 in diameter were prepared on LaAlO{sub 3} substrates by TFA-MOD method. Inductive critical current densitiy J{sub c}, microwave surface resistance R{sub s}, as well as the microstructure were characterized. A newly homemade furnace system was used to epitaxially grown YBCO films, which can improve the uniformity of YBCO film significantly by gas supply and temperature distribution proper design. Results showed that the large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive J{sub c} in excess of 6 MA/cm{sup 2} with uniform distribution, and low R{sub s} (10 GHz) below 0.3 mΩ at 77 K were obtained. Andthe film filter may be prepared to work at temperatures lower than 74 K. These results are very close to the highest value of YBCO films made by conventional vacuum method, so we show a very promising route for large-scale production of high quality large-area YBCO superconducting films at a lower cost.

  2. Determination of Na+ and K+ ions in the high-level liquid waste by ion chromatography (IC)

    International Nuclear Information System (INIS)

    Chen Lianzhong; Ma Guilan

    1992-01-01

    The determination of Na + and k + ions in the high-level liquid waste is investigated using ion chromatography. In order to protect the low capacity ion exchange resin in single column IC and remove the transition metal as well as other heavy metal ions that are contained in liquid waste, the pretreatment column with EDTA chelating resin is used. Those impurity metal ions are strongly absorbed by EDTA chelating resin and 100% of Na + and K + ions in the solution are eluted. The ability of the decontamination of EDTA chelating resin is satisfactory. The sample of the high-level liquid waste is diluted appropriately, then an aliquot of the sample is passed through the pretreatment column with EDTA chelating resin, the eluate is analysed by single column ion chromatography. The precision of this method is better than 5% for the determination of Na + and K + ions (at μg· ml -1 level)

  3. Preliminary I&C Design for LORELEI

    International Nuclear Information System (INIS)

    Korotkin, S.; Kaufman, Y.; Guttmann, E. B.; Levy, S.; Amidan, D.; Gdalyho, B.; Cahana, T.; Ellenbogen, A.; Arad, M.; Weiss, Y.; Sasson, A.; Ferry, L.; Bourrelly, F.; Cohen, Y.

    2014-01-01

    This document summarizes the preliminary I&C design for LORELEI experiment The preliminary design deals with considerations regarding appropriate safety and service instrumentation. The determined closed loop control rules for temperature and position will be implemented in the detailed design. The Computer Aided Operator Decisions System (CAODS) will be used for prediction of hot spot temperature and thickness of oxidation layer using Baker-Just correlation. The proposed hybrid simulation system comprising of both virtual and real hardware will be in-cooperated for LORELEI verification. It will perform both integration cold tests for a partial hardware loop and virtual tests for the final I&C design

  4. Adopting De Novo Programming Approach on IC Design Service Firms Resources Integration

    Directory of Open Access Journals (Sweden)

    James K. C. Chen

    2014-01-01

    Full Text Available The semiconductor industry has very important position in computer industry, ICT field, and new electronic technology developing. The IC design service is one of key factor of semiconductor industry development. There are more than 365 IC design service firms have been established around Hsinchu Science Park in Taiwan. Building an efficient planning model for IC design service firm resources integrating is very interest issue. This study aims to construct a planning model for IC design service firm implementation resources integration. This study uses the De Novo programming as an approach of criteria alternative to achieve optimal resource allocation on IC design firm. Results show the IC design service firm should conduct open innovation concept and utilizes design outsourcing obtains cost down and enhance IC design service business performance. This plan model of De Novo programming is not only for IC design service firm and also can apply to the other industrial implementation strategic alliance/integrating resource. This plan model is a universal model for the others industries field.

  5. High magnetic field quantum transport in Au nanoparticle–cellulose films

    International Nuclear Information System (INIS)

    Turyanska, L; Makarovsky, O; Patanè, A; Kozlova, N V; Liu, Z; Li, M; Mann, S

    2012-01-01

    We report the magneto-transport properties of cellulose films comprising interconnected networks of gold nanoparticles (Au NPs). Cellulose is a biopolymer that can be made electrically conducting by cellulose regeneration in Au NP dispersions. The mechanism of electronic conduction in the Au–cellulose films changes from variable range hopping to metallic-like conduction with decreasing resistivity. Our experiments in high magnetic fields (up to 45 T) reveal negative magnetoresistance in the highly resistive films. This is attributed to the spin polarization of the Au NPs and the magnetic field induced suppression of electron spin flips during spin-polarized tunneling in the NP network. (paper)

  6. High-coercivity FePt nanoparticle assemblies embedded in silica thin films

    International Nuclear Information System (INIS)

    Yan, Q; Purkayastha, A; Singh, A P; Li, H; Ramanath, G; Li, A; Ramanujan, R V

    2009-01-01

    The ability to process assemblies using thin film techniques in a scalable fashion would be a key to transmuting the assemblies into manufacturable devices. Here, we embed FePt nanoparticle assemblies into a silica thin film by sol-gel processing. Annealing the thin film composite at 650 deg. C transforms the chemically disordered fcc FePt phase into the fct phase, yielding magnetic coercivity values H c >630 mT. The positional order of the particles is retained due to the protection offered by the silica host. Such films with assemblies of high-coercivity magnetic particles are attractive for realizing new types of ultra-high-density data storage devices and magneto-composites.

  7. High dose-rate brachytherapy source position quality assurance using radiochromic film

    International Nuclear Information System (INIS)

    Evans, M.D.C.; Devic, S.; Podgorsak, E.B.

    2007-01-01

    Traditionally, radiographic film has been used to verify high-dose-rate brachytherapy source position accuracy by co-registering autoradiographic and diagnostic images of the associated applicator. Filmless PACS-based clinics that do not have access to radiographic film and wet developers may have trouble performing this quality assurance test in a simple and practical manner. We describe an alternative method for quality assurance using radiochromic-type film. In addition to being easy and practical to use, radiochromic film has some advantages in comparison with traditional radiographic film when used for HDR brachytherapy quality assurance

  8. High-frequency properties of superconducting Y-Ba-Cu-oxide thin films

    International Nuclear Information System (INIS)

    Ramakrishnan, E.S.; Su, M.; Howng, W.

    1992-01-01

    rf and microwave properties of superconducting YBa 2 Cu 3 O 7-x thin films were measured and analyzed using a coplanar resonator structure. The films were developed by sequential electron-beam evaporation of the metals followed by postanneal processing. dc properties of the films were obtained from resistance-temperature and current-voltage measurements to evaluate the transition temperature and current densities. High-frequency properties were measured from 70 to 10 K and in the frequency range 1--3 GHz to determine the film characteristics as compared to pure copper films on the same substrates

  9. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  10. High-throughput measurement of polymer film thickness using optical dyes

    Science.gov (United States)

    Grunlan, Jaime C.; Mehrabi, Ali R.; Ly, Tien

    2005-01-01

    Optical dyes were added to polymer solutions in an effort to create a technique for high-throughput screening of dry polymer film thickness. Arrays of polystyrene films, cast from a toluene solution, containing methyl red or solvent green were used to demonstrate the feasibility of this technique. Measurements of the peak visible absorbance of each film were converted to thickness using the Beer-Lambert relationship. These absorbance-based thickness calculations agreed within 10% of thickness measured using a micrometer for polystyrene films that were 10-50 µm. At these thicknesses it is believed that the absorbance values are actually more accurate. At least for this solvent-based system, thickness was shown to be accurately measured in a high-throughput manner that could potentially be applied to other equivalent systems. Similar water-based films made with poly(sodium 4-styrenesulfonate) dyed with malachite green oxalate or congo red did not show the same level of agreement with the micrometer measurements. Extensive phase separation between polymer and dye resulted in inflated absorbance values and calculated thickness that was often more than 25% greater than that measured with the micrometer. Only at thicknesses below 15 µm could reasonable accuracy be achieved for the water-based films.

  11. Preparation and Analysis of Platinum Thin Films for High Temperature Sensor Applications

    Science.gov (United States)

    Wrbanek, John D.; Laster, Kimala L. H.

    2005-01-01

    A study has been made of platinum thin films for application as high temperature resistive sensors. To support NASA Glenn Research Center s high temperature thin film sensor effort, a magnetron sputtering system was installed recently in the GRC Microsystems Fabrication Clean Room Facility. Several samples of platinum films were prepared using various system parameters to establish run conditions. These films were characterized with the intended application of being used as resistive sensing elements, either for temperature or strain measurement. The resistances of several patterned sensors were monitored to document the effect of changes in parameters of deposition and annealing. The parameters were optimized for uniformity and intrinsic strain. The evaporation of platinum via oxidation during annealing over 900 C was documented, and a model for the process developed. The film adhesion was explored on films annealed to 1000 C with various bondcoats on fused quartz and alumina. From this compiled data, a list of optimal parameters and characteristics determined for patterned platinum thin films is given.

  12. High mobility transparent conducting oxides for thin film solar cells

    International Nuclear Information System (INIS)

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  13. PENGARUH IC TERHADAP KINERJA KEUANGAN PERUSAHAAN PERBANKAN PERIODE 2005-2007

    Directory of Open Access Journals (Sweden)

    Subkhan -

    2012-03-01

    Full Text Available Tujuan dari penelitian ini adalah untuk meneliti pengaruh intellectual capital (IC perusahaan pada kinerja keuangan mereka. Penelitian ini menggunakan Public Framework dan data dari 57 sektor perbankan Indonesia yang tercatat antara tahun 2005 dan 2007 pada Indonesian Stock Exchange. Penelitian ini menggunakan partial least square (PLS untuk menganalisis data. 3 elemen IC dan kinerja perusahaan dites dalam penelitian ini. Hasilnya memperlihatkan bahwa IC dan kinerja keuangan mempunyai pengaruh yang signifikan, VACA mempunyai pengaruh yang signifikan terhadap kinerja keuangan, VAHU mempuyai pengaruh yang signifikan  terhadap kinerja keuangan, dan STVA mempunyai pengaruh yang signifikan terhadap kinerja keuangan. Abstract The objective of this study is to investigate the influence of firm’s intellectual capital (IC on their financial performance. This paper uses Public Framework and data from 57 Indonesian banking sectors listed between 2005 and 2007 on the Indonesian Stock Exchange. This study uses partial least square (PLS for data analysis. Three elements of IC and company performances are tested by this study. The results show that IC and financial performance have significant influence, VACA has significant influence to financial performance, VAHU has significant influence to financial performance, and STVA has significant influence to financial performance.Keywords: intellectual capital; financial performance

  14. Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

    2013-01-01

    Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered films • TiO 2 films with high refractive index are obtained without post-growth annealing

  15. High quality TmIG films with perpendicular magnetic anisotropy grown by sputtering

    Science.gov (United States)

    Wu, C. N.; Tseng, C. C.; Yeh, S. L.; Lin, K. Y.; Cheng, C. K.; Fanchiang, Y. T.; Hong, M.; Kwo, J.

    Ferrimagnetic thulium iron garnet (TmIG) films grown on gadolinium gallium garnet substrates recently showed stress-induced perpendicular magnetic anisotropy (PMA), attractive for realization of quantum anomalous Hall effect (QAHE) of topological insulator (TI) films via the proximity effect. Moreover, current induced magnetization switching of Pt/TmIG has been demonstrated for the development of room temperature (RT) spintronic devices. In this work, high quality TmIG films (about 25nm) were grown by sputtering at RT followed by post-annealing. We showed that the film composition is tunable by varying the growth parameters. The XRD results showed excellent crystallinity of stoichiometric TmIG films with an out-of-plane lattice constant of 1.2322nm, a narrow film rocking curve of 0.017 degree, and a film roughness of 0.2 nm. The stoichiometric films exhibited PMA and the saturation magnetization at RT was 109 emu/cm3 (RT bulk value 110 emu/cm3) with a coercive field of 2.7 Oe. In contrast, TmIG films of Fe deficiency showed in-plane magnetic anisotropy. The high quality sputtered TmIG films will be applied to heterostructures with TIs or metals with strong spin-orbit coupling for novel spintronics.

  16. Highly transparent, flexible, and thermally stable superhydrophobic ORMOSIL aerogel thin films.

    Science.gov (United States)

    Budunoglu, Hulya; Yildirim, Adem; Guler, Mustafa O; Bayindir, Mehmet

    2011-02-01

    We report preparation of highly transparent, flexible, and thermally stable superhydrophobic organically modified silica (ORMOSIL) aerogel thin films from colloidal dispersions at ambient conditions. The prepared dispersions are suitable for large area processing with ease of coating and being directly applicable without requiring any pre- or post-treatment on a variety of surfaces including glass, wood, and plastics. ORMOSIL films exhibit and retain superhydrophobic behavior up to 500 °C and even on bent flexible substrates. The surface of the films can be converted from superhydrophobic (contact angle of 179.9°) to superhydrophilic (contact angle of <5°) by calcination at high temperatures. The wettability of the coatings can be changed by tuning the calcination temperature and duration. The prepared films also exhibit low refractive index and high porosity making them suitable as multifunctional coatings for many application fields including solar cells, flexible electronics, and lab on papers.

  17. HIGH STAR FORMATION RATES IN TURBULENT ATOMIC-DOMINATED GAS IN THE INTERACTING GALAXIES IC 2163 AND NGC 2207

    International Nuclear Information System (INIS)

    Elmegreen, Bruce G.; Kaufman, Michele; Bournaud, Frédéric; Juneau, Stéphanie; Elmegreen, Debra Meloy; Struck, Curtis; Brinks, Elias

    2016-01-01

    CO observations of the interacting galaxies IC 2163 and NGC 2207 are combined with HI, H α , and 24 μ m observations to study the star formation rate (SFR) surface density as a function of the gas surface density. More than half of the high-SFR regions are HI dominated. When compared to other galaxies, these HI-dominated regions have excess SFRs relative to their molecular gas surface densities but normal SFRs relative to their total gas surface densities. The HI-dominated regions are mostly located in the outer part of NGC 2207 where the HI velocity dispersion is high, 40–50 km s −1 . We suggest that the star-forming clouds in these regions have envelopes at lower densities than normal, making them predominantly atomic, and cores at higher densities than normal because of the high turbulent Mach numbers. This is consistent with theoretical predictions of a flattening in the density probability distribution function for compressive, high Mach number turbulence.

  18. HIGH STAR FORMATION RATES IN TURBULENT ATOMIC-DOMINATED GAS IN THE INTERACTING GALAXIES IC 2163 AND NGC 2207

    Energy Technology Data Exchange (ETDEWEB)

    Elmegreen, Bruce G. [IBM Research Division, T.J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598 (United States); Kaufman, Michele [110 Westchester Rd, Newton, MA 02458 (United States); Bournaud, Frédéric; Juneau, Stéphanie [Laboratoire AIM-Paris-Saclay, CEA/DSM-CNRS-Université Paris Diderot, Irfu/Service d’Astrophysique, CEA Saclay, Orme des Merisiers, F-91191 Gif sur Yvette (France); Elmegreen, Debra Meloy [Department of Physics and Astronomy, Vassar College, Poughkeepsie, NY 12604 (United States); Struck, Curtis [Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Brinks, Elias, E-mail: bge@us.ibm.com, E-mail: kaufmanrallis@icloud.com, E-mail: frederic.bournaud@gmail.com, E-mail: stephanie.juneau@cea.fr, E-mail: elmegreen@vassar.edu, E-mail: struck@iastate.edu, E-mail: e.brinks@herts.ac.uk [University of Hertfordshire, Centre for Astrophysics Research, College Lane, Hatfield AL10 9AB (United Kingdom)

    2016-05-20

    CO observations of the interacting galaxies IC 2163 and NGC 2207 are combined with HI, H α , and 24 μ m observations to study the star formation rate (SFR) surface density as a function of the gas surface density. More than half of the high-SFR regions are HI dominated. When compared to other galaxies, these HI-dominated regions have excess SFRs relative to their molecular gas surface densities but normal SFRs relative to their total gas surface densities. The HI-dominated regions are mostly located in the outer part of NGC 2207 where the HI velocity dispersion is high, 40–50 km s{sup −1}. We suggest that the star-forming clouds in these regions have envelopes at lower densities than normal, making them predominantly atomic, and cores at higher densities than normal because of the high turbulent Mach numbers. This is consistent with theoretical predictions of a flattening in the density probability distribution function for compressive, high Mach number turbulence.

  19. Self-Patterning of Silica/Epoxy Nanocomposite Underfill by Tailored Hydrophilic-Superhydrophobic Surfaces for 3D Integrated Circuit (IC) Stacking.

    Science.gov (United States)

    Tuan, Chia-Chi; James, Nathan Pataki; Lin, Ziyin; Chen, Yun; Liu, Yan; Moon, Kyoung-Sik; Li, Zhuo; Wong, C P

    2017-03-15

    As microelectronics are trending toward smaller packages and integrated circuit (IC) stacks nowadays, underfill, the polymer composite filled in between the IC chip and the substrate, becomes increasingly important for interconnection reliability. However, traditional underfills cannot meet the requirements for low-profile and fine pitch in high density IC stacking packages. Post-applied underfills have difficulties in flowing into the small gaps between the chip and the substrate, while pre-applied underfills face filler entrapment at bond pads. In this report, we present a self-patterning underfilling technology that uses selective wetting of underfill on Cu bond pads and Si 3 N 4 passivation via surface energy engineering. This novel process, fully compatible with the conventional underfilling process, eliminates the issue of filler entrapment in typical pre-applied underfilling process, enabling high density and fine pitch IC die bonding.

  20. ICS logging solution for network-based attacks using Gumistix technology

    Science.gov (United States)

    Otis, Jeremy R.; Berman, Dustin; Butts, Jonathan; Lopez, Juan

    2013-05-01

    Industrial Control Systems (ICS) monitor and control operations associated with the national critical infrastructure (e.g., electric power grid, oil and gas pipelines and water treatment facilities). These systems rely on technologies and architectures that were designed for system reliability and availability. Security associated with ICS was never an inherent concern, primarily due to the protections afforded by network isolation. However, a trend in ICS operations is to migrate to commercial networks via TCP/IP in order to leverage commodity benefits and cost savings. As a result, system vulnerabilities are now exposed to the online community. Indeed, recent research has demonstrated that many exposed ICS devices are being discovered using readily available applications (e.g., ShodanHQ search engine and Google-esque queries). Due to the lack of security and logging capabilities for ICS, most knowledge about attacks are derived from real world incidents after an attack has already been carried out and the damage has been done. This research provides a method for introducing sensors into the ICS environment that collect information about network-based attacks. The sensors are developed using an inexpensive Gumstix platform that can be deployed and incorporated with production systems. Data obtained from the sensors provide insight into attack tactics (e.g., port scans, Nessus scans, Metasploit modules, and zero-day exploits) and characteristics (e.g., attack origin, frequency, and level of persistence). Findings enable security professionals to draw an accurate, real-time awareness of the threats against ICS devices and help shift the security posture from reactionary to preventative.

  1. Droplet deposition measurement with high-speed camera and novel high-speed liquid film sensor with high spatial resolution

    International Nuclear Information System (INIS)

    Damsohn, M.; Prasser, H.-M.

    2011-01-01

    Highlights: → Development of a sensor for time- and space-resolved droplet deposition in annular flow. → Experimental measurement of droplet deposition in horizontal annular flow to compare readings of the sensor with images of a high-speed camera when droplets are depositing unto the liquid film. → Self-adaptive signal filter based on autoregression to separate droplet impacts in the sensor signal from waves of liquid films. - Abstract: A sensor based on the electrical conductance method is presented for the measurement of dynamic liquid films in two-phase flow. The so called liquid film sensor consists of a matrix with 64 x 16 measuring points, a spatial resolution of 3.12 mm and a time resolution of 10 kHz. Experiments in a horizontal co-current air-water film flow were conducted to test the capability of the sensor to detect droplet deposition from the gas core onto the liquid film. The experimental setup is equipped with the liquid film sensor and a high speed camera (HSC) recording the droplet deposition with a sampling rate of 10 kHz simultaneously. In some experiments the recognition of droplet deposition on the sensor is enhanced by marking the droplets with higher electrical conductivity. The comparison between the HSC and the sensor shows, that the sensor captures the droplet deposition above a certain droplet diameter. The impacts of droplet deposition can be filtered from the wavy structures respectively conductivity changes of the liquid film using a filter algorithm based on autoregression. The results will be used to locally measure droplet deposition e.g. in the proximity of spacers in a subchannel geometry.

  2. PELE-IC test problems

    International Nuclear Information System (INIS)

    Gong, E.Y.; Alexander, E.E.; McMaster, W.H.; Quinones, D.F.

    1979-01-01

    This report provides prospective users of the Lawrence Livermore Laboratory (LLL) fluid-structure interaction computer code, PELE-IC, a variety of test problems for verifying the code on CDC 7600 computer systems at facilities external to the LLL environment. The test problems have been successfully run on CDC 7600 computers at the LLL and Lawrence Berkeley Laboratory (LBL) computer centers

  3. Development of grouped icEEG for the study of cognitive processing

    Directory of Open Access Journals (Sweden)

    Cihan Mehmet Kadipasaoglu

    2015-07-01

    Full Text Available Invasive intracranial EEG (icEEG offers a unique opportunity to study human cognitive networks at an unmatched spatiotemporal resolution. To date, the contributions of icEEG have been limited to the individual-level analyses or cohorts whose data are not integrated in any way. Here we discuss how grouped approaches to icEEG overcome challenges related to sparse-sampling, correct for individual variations in response and provide statistically valid models of brain activity in a population. By the generation of whole-brain activity maps, grouped icEEG enables the study of intra and interregional dynamics between distributed cortical substrates exhibiting task-dependent activity. In this fashion, grouped icEEG analyses can provide significant advances in understanding the mechanisms by which cortical networks give rise to cognitive functions.

  4. Preparation of the Crosslinked Polyethersulfone Films by High Temperature Electron-Beam Irradiation

    International Nuclear Information System (INIS)

    Li, J.

    2006-01-01

    The aromatic polymers, mainly so called engineering plastics, were famed for the good stability under irradiation. However, high temperature irradiation of the aromatic polymers can result the crosslinked structure, due to the improved molecular mobility. Polyethersulfone (PES) is a wide used engineering plastic because of the high performance and high thermal stability. PES films were irradiated by electron-beam under nitrogen atmosphere above the glass transition temperature and then the covalently crosslinked PES (RX-PES) films were obtained. The irradiations were also performed at ambient temperature for comparison. The network structure formation of the RX-PES films was confirmed by the appearance of the gel, which were measured by soaking the irradiated PES films in the N,N-dimethylformamide (DMF) at room temperature. When the PES films were irradiated to 300 kGy, there was gel appeared. The gel percent increased with the increasing in the absorbed dose, and saturated when the absorbed dose exceeded 1200 kGy. However, there was no gel formed for the PES films irradiated at ambient temperature even to 2250 kGy. The G(S) and G(X) were calculated according to the Y-crosslinking mechanism. The results values are consistent in error range. G(S) of 0.10 and G(X) of 0.23 were obtained. As calculated, almost all the macromolecular radicals produced by chain scission were used for crosslinking. Also, the glass transition temperature of the RX-PES films increased with the increasing in the absorbed doses, while the glass transition temperature of the PES films irradiated at ambient temperature decreased with the increasing in the absorbed doses. The blending films of the PES with FEP or ETFE were prepared and the high temperature irradiation effects were also studies

  5. Extreme low-power mixed signal IC design

    CERN Document Server

    Tajalli, Armin

    2010-01-01

    This book describes a completely novel class of techniques for designing ultra-low-power integrated circuits (ICs). In many applications such as battery operated systems and battery-less (energy-scavenging) systems, power dissipation is a critical parameter. As a result, there is a growing demand for reducing the power (energy) consumption in ICs to extremely low levels, not achievable by using classical ""subthreshold CMOS"" techniques. This book introduces a new family of ""subthreshold circuits"" called ""source-coupled circuits"". This family of circuits can be used for implementing digita

  6. Design Developing of IC- Model Using VHDL

    International Nuclear Information System (INIS)

    Inzar-Anas

    2005-01-01

    In present, the electronic design required to become simple, small and flexible. The physical dimension of IC and number of pin can be significantly reduced while the flexibility and compatibility of IC was not change. Implementation of VHDL(VHSIC Hardware Description Language) seem as a great progress in the design of digital circuit. By using this language designing of model can be more simple, flexible and efficient. This paper was purposed to introduce VHDL and its features. Sample in modeling to illustrate the advantage of VHDL will also be described. (author)

  7. High-quality LaVO3 films as solar energy conversion material

    International Nuclear Information System (INIS)

    Zhang, Hai-Tian; Brahlek, Matthew; Ji, Xiaoyu; Lei, Shiming; Lapano, Jason

    2017-01-01

    Mott insulating oxides and their heterostructures have recently been identified as potential photovoltaic materials with favorable absorption properties and an intrinsic built-in electric field that can efficiently separate excited electron hole pairs. At the same time, they are predicted to overcome the Shockley-Queisser limit due to strong electron electron interaction present. Despite these premises a high concentration of defects commonly observed in Mott insulating films acting as recombination centers can derogate the photovoltaic conversion efficiency. With use of the self-regulated growth kinetics in hybrid molecular beam epitaxy, this obstacle can be overcome. High-quality, stoichiometric LaVO 3 films were grown with defect densities of in-gap states up to 2 orders of magnitude lower compared to the films in the literature, and a factor of 3 lower than LaVO 3 bulk single crystals. Photoconductivity measurements revealed a significant photoresponsivity increase as high as tenfold of stoichiometric LaVO 3 films compared to their nonstoichiometric counterparts. Furthermore, this work marks a critical step toward the realization of high-performance Mott insulator solar cells beyond conventional semiconductors.

  8. Studies on the high electronic energy deposition in polyaniline thin films

    International Nuclear Information System (INIS)

    Deshpande, N.G.; Gudage, Y.G.; Vyas, J.C.; Singh, F.; Sharma, Ramphal

    2008-01-01

    We report here the physico-chemical changes brought about by high electronic energy deposition of gold ions in HCl doped polyaniline (PANI) thin films. PANI thin films were synthesized by in situ polymerization technique. The as-synthesized PANI thin films of thickness 160 nm were irradiated using Au 7+ ion of 100 MeV energy at different fluences, namely, 5 x 10 11 ions/cm 2 and 5 x 10 12 ions/cm 2 , respectively. A significant change was seen after irradiation in electrical and photo conductivity, which may be related to increased carrier concentration, and structural modifications in the polymer film. In addition, the high electronic energy deposition showed other effects like cross-linking of polymer chains, bond breaking and creation of defect sites. AFM observations revealed mountainous type features in all (before and after irradiation) PANI samples. The average size (diameter) and density of such mountainous clusters were found to be related with the ion fluence. The AFM profiles also showed change in the surface roughness of the films with respect to irradiation, which is one of the peculiarity of the high electronic energy deposition technique

  9. High critical current density YBCO films and fabrication of dc-SQUIDs

    CERN Document Server

    Kuriki, S; Kawaguchi, Y; Matsuda, M; Otowa, T

    2002-01-01

    In order to improve the sensitivity of SQUID magnetometers made of high-T sub c films, we have studied the conditions of pulsed-laser deposition of YBCO films. Among the different deposition parameters examined, extensive degassing of the vacuum chamber before and precise control of the substrate temperature during the film deposition were found effective for obtaining high critical temperature T sub c and high critical current density J sub c. It was also found that the residual-resistance ratio has a clear correlation with J sub c , indicating that it can be a good, and easy to measure, index of the film quality. Films having T sub c approx 89-90 K and J sub c >= 5x10 sup 6 A cm sup - sup 2 at 77 K were used to fabricate SQUIDs without a pickup loop. Grain-boundary junctions formed on bicrystal substrates with a 30 deg. misorientation angle exhibited I sub c R sub n values of more than 100 mu V at 77 K. The well-known scaling behaviour of the relation I sub c R sub n propor to (J sup G sup B sub c) sup 1 su...

  10. Ethnobotany of the Sierra Nevada del Cocuy-Güicán

    NARCIS (Netherlands)

    Rodríguez, Mireia Alcántara; Angueyra, Andrea; Cleef, Antoine M.; Andel, van Tinde

    2018-01-01

    Background: The Sierra Nevada del Cocuy-Güicán in the Colombian Andes is protected as a National Natural Park since 1977 because of its fragile páramo ecosystems, extraordinary biodiversity, high plant endemism, and function as water reservoir. The vegetation on this mountain is threatened by

  11. Layer-by-layer assembled polyaniline nanofiber/multiwall carbon nanotube thin film electrodes for high-power and high-energy storage applications.

    Science.gov (United States)

    Hyder, Md Nasim; Lee, Seung Woo; Cebeci, Fevzi Ç; Schmidt, Daniel J; Shao-Horn, Yang; Hammond, Paula T

    2011-11-22

    Thin film electrodes of polyaniline (PANi) nanofibers and functionalized multiwall carbon nanotubes (MWNTs) are created by layer-by-layer (LbL) assembly for microbatteries or -electrochemical capacitors. Highly stable cationic PANi nanofibers, synthesized from the rapid aqueous phase polymerization of aniline, are assembled with carboxylic acid functionalized MWNT into LbL films. The pH-dependent surface charge of PANi nanofibers and MWNTs allows the system to behave like weak polyelectrolytes with controllable LbL film thickness and morphology by varying the number of bilayers. The LbL-PANi/MWNT films consist of a nanoscale interpenetrating network structure with well developed nanopores that yield excellent electrochemical performance for energy storage applications. These LbL-PANi/MWNT films in lithium cell can store high volumetric capacitance (~238 ± 32 F/cm(3)) and high volumetric capacity (~210 mAh/cm(3)). In addition, rate-dependent galvanostatic tests show LbL-PANi/MWNT films can deliver both high power and high energy density (~220 Wh/L(electrode) at ~100 kW/L(electrode)) and could be promising positive electrode materials for thin film microbatteries or electrochemical capacitors. © 2011 American Chemical Society

  12. A revolutionary concept to improve the efficiency of IC antennas

    Energy Technology Data Exchange (ETDEWEB)

    Milanesio, D.; Maggiora, R. [Politecnico di Torino, Dipartimento di Elettronica e Telecomunicazioni (DET), Torino (Italy)

    2014-02-12

    The successful design of an Ion Cyclotron (IC) antenna mainly relies on the capability of coupling high power to the plasma (MW), feature that is currently reached by allowing rather high voltages (tens of kV) on the unavoidable unmatched part of the feeding lines. This requirement is often responsible of arcs along the transmission lines and other unwanted phenomena that considerably limit the usage of IC launchers. In this work, we suggest and describe a revolutionary approach based on high impedance surfaces, which allows to increase the antenna radiation efficiency and, hence, to highly reduce the imposed voltages to couple the same level of power to the plasma. High-impedance surfaces are periodic metallic structures (patches) displaced usually on top of a dielectric substrate and grounded by means of vertical posts usually embedded inside a dielectric, in a mushroom-like shape. In terms of working properties, high impedance surfaces are electrically thin in-phase reflectors, i.e. they present a high impedance, within a given frequency band, such that the image currents are in-phase with the currents of the antenna itself, thus determining a significant efficiency increase. While the usual design of a high impedance surface requires the presence of a dielectric layer, some alternative solutions can be realized in vacuum, taking advantage of double layers ofmetallic patches. After an introductory part on the properties of high impedance surfaces, this work documents both their design by means of numerical codes and their implementation on a scaled mock-up.

  13. High thermoelectric power factor from multilayer solution-processed organic films

    Science.gov (United States)

    Zuo, Guangzheng; Andersson, Olof; Abdalla, Hassan; Kemerink, Martijn

    2018-02-01

    We investigate the suitability of the "sequential doping" method of organic semiconductors for thermoelectric applications. The method consists of depositing a dopant (F4TCNQ) containing solution on a previously cast semiconductor (P3HT) thin film to achieve high conductivity, while preserving the morphology. For very thin films (˜25 nm), we achieve a high power factor around 8 μW/mK-2 with a conductivity over 500 S/m. For the increasing film thickness, conductivity and power factor show a decreasing trend, which we attribute to the inability to dope the deeper parts of the film. Since thick films are required to extract significant power from thermoelectric generators, we developed a simple additive technique that allows the deposition of an arbitrary number of layers without significant loss in conductivity or power factor that, for 5 subsequent layers, remain at ˜300 S/m and ˜5 μW/mK-2, respectively, whereas the power output increases almost one order of magnitude as compared to a single layer. The efficient doping in multilayers is further confirmed by an increased intensity of (bi)polaronic features in the UV-Vis spectra.

  14. A high power ZnO thin film piezoelectric generator

    Science.gov (United States)

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  15. High efficiency thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schock, Hans-Werner [Helmholtz Zentrum Berlin (Germany). Solar Energy

    2012-11-01

    Production of photovoltaics is growing worldwide on a gigawatt scale. Among the thin film technologies, Cu(In,Ga)S,Se{sub 2} (CIS or CIGS) based solar cells have been the focus of more and more attention. This paper aims to analyze the success of CIGS based solar cells and the potential of this technology for future photovoltaics large-scale production. Specific material properties make CIS unique and allow the preparation of the material with a wide range of processing options. The huge potential lies in the possibility to take advantage of modern thin film processing equipment and combine it with very high efficiencies beyond 20% already achieved on the laboratory scale. A sustainable development of this technology could be realized by modifying the materials and replacing indium by abundant elements. (orig.)

  16. To Enhance the Fire Resistance Performance of High-Speed Steel Roller Door with Water Film System

    Directory of Open Access Journals (Sweden)

    De-Hua Chung

    2015-01-01

    Full Text Available The structure of high-speed roller door with water film has improved in this study. The flameproof water film system is equipped with a water circulating device to reduce the water consumption of water film system. The water film is generated at the roller box of the high-speed roller door in this study. The heating test is done with the full-scale heating furnace. Both cases of the water film on unexposed surface and water film on exposed surface passed the fire resistance test based on ISO 834, proving that the high-speed roller door with water film system has 120A fire resistance period. The main findings indicate that the water film on exposed surface shows that as the amount of water film evaporated by high temperature inside the furnace must be greater than the evaporation capacity of water film on unexposed surface, the required water supply is 660 L more than the water film on unexposed surface.

  17. Thick-Film and LTCC Passive Components for High-Temperature Electronics

    Directory of Open Access Journals (Sweden)

    A. Dziedzic

    2013-04-01

    Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

  18. OSL signal of IC chips from mobile phones for dose assessment in accidental dosimetry

    International Nuclear Information System (INIS)

    Mrozik, A.; Marczewska, B.; Bilski, P.; Książek, M.

    2017-01-01

    The rapid assessment of the radiation dose is very important for the prediction of biological effects after unintended exposition. The materials for use as dosimeters in accidental dosimetry should be everyday objects which are usually placed near the human body, for example mobile phones. IC (Integrated Circuit) chip is one of several electronic components of mobile phones which give a luminescent signal. The measurements of samples from different mobile phones and smartphones were conducted by optically stimulated luminescence (OSL) and thermoluminescence (TL) methods. The OSL measurement was performed in two ways: with readouts at room temperature and at 100 °C. This work is focused on determination of OSL dose response of IC chips, minimum detectable dose (MDD), OSL signal stability in the time after the exposition, its repeatability and sensitivity to light. Several tests of the assessment of unknown doses were also conducted. The readouts at 100 °C indicate the reducing of the fading of OSL signal in the first hours after irradiation in comparison with room temperature readouts. The obtained results showed relatively good dosimetric properties of IC chips: their high sensitivity to the ionizing radiation, linear dose response up to 10 Gy and a good reproducibility of OSL signal which can allow the dose recovery of doses less than 2 Gy in 14 days after an incident with the accuracy better than 25%. The fading is a drawback of IC chips and the fading factor should be considered when calculating the dose. - Highlights: • IC chips from smartphones demonstrated high potential for accidental dosimetry. • Minimum detectable dose was estimated as a value of 50 mGy. • Samples showed linear dose response for the dose range from 0.05 Gy up to 10 Gy.

  19. Integration of IC/EC systems in ITER

    International Nuclear Information System (INIS)

    Gassmann, T.; Beaumont, B.; Baruah, U.K.; Bonicelli, T.; Chiocchio, S.; Cox, D.; Darbos, C.; Decamps, H.; Denisov, G.; Henderson, M.; Kazarian, F.; Lamalle, P.U.; Mukherjee, A.; Rasmussen, D.; Saibene, G.; Sartori, R.; Sakamoto, K.; Tanga, A.

    2010-01-01

    The RF heating and current drive (H and CD) systems that are to be installed in ITER during the construction phase, are the electron cyclotron (EC) and ion cyclotron (IC) systems. They are complex assemblies of high voltage power supplies (HVPS), RF generators, transmission lines and antennas. Their design and integration are constrained by many interfaces, both internal, between the subsystems, and external, with the other ITER systems. In addition, some components must be compatible with a nuclear environment and are classified as Safety Important Component. This paper describes the processes implemented in ITER to ensure proper integration.

  20. High quality atomically thin PtSe2 films grown by molecular beam epitaxy

    Science.gov (United States)

    Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

    2017-12-01

    Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

  1. Electrochemical characterization of oxide film formed at high temperature on Alloy 690

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, Geogy J., E-mail: gja@barc.gov.in [Materials Science Division, BARC, Mumbai 400 085 (India); Bhambroo, Rajan [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India); Kain, V. [Materials Science Division, BARC, Mumbai 400 085 (India); Shekhar, R. [CCCM, BARC, Hyderabad 500 062 (India); Dey, G.K. [Materials Science Division, BARC, Mumbai 400 085 (India); Raja, V.S. [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer GD-QMS studies of high temperature oxide film formed on Alloy 690. Black-Right-Pointing-Pointer Defect density reduced with increase in temperature. Black-Right-Pointing-Pointer Electrochemical behaviour of oxide film correlated to the Cr-content in oxide. - Abstract: High temperature passivation studies on Alloy 690 were carried out in lithiated water at 250 Degree-Sign C, 275 Degree-Sign C and 300 Degree-Sign C for 72 h. The passive films were characterized by glow discharge-quadrupole mass spectroscopy (GD-QMS) for compositional variation across the depth and micro laser Raman spectroscopy for oxide composition on the surface. The defect density in the oxide films was established from the Mott-Schottky analysis using electrochemical impedance spectroscopy. Electrochemical experiments at room temperature in chloride medium revealed best passivity behaviour by the oxide film formed at 300 Degree-Sign C for 72 h. The electrochemical studies were correlated to the chromium (and oxygen) content of the oxide films. Autoclaving at 300 Degree-Sign C resulted in the best passive film formation on Alloy 690 in lithiated water.

  2. Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films

    International Nuclear Information System (INIS)

    Ohdaira, Keisuke; Tomura, Naohito; Ishii, Shohei; Matsumura, Hideki

    2011-01-01

    We investigate residual forms of hydrogen (H) atoms such as bonding configuration in poly-crystalline silicon (poly-Si) films formed by the flash-lamp-induced crystallization of catalytic chemical vapor deposited (Cat-CVD) a-Si films. Raman spectroscopy reveals that at least part of H atoms in flash-lamp-crystallized (FLC) poly-Si films form Si-H 2 bonds as well as Si-H bonds with Si atoms even using Si-H-rich Cat-CVD a-Si films, which indicates the rearrangement of H atoms during crystallization. The peak desorption temperature during thermal desorption spectroscopy (TDS) is as high as 900 o C, similar to the reported value for bulk poly-Si.

  3. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  4. The H I chronicles of little things BCDs II: The origin of IC 10's H I structure

    Energy Technology Data Exchange (ETDEWEB)

    Ashley, Trisha; Simpson, Caroline E.; Pokhrel, Nau Raj [Department of Physics, Florida International University, 11200 SW 8th Street, CP 204, Miami, FL 33199 (United States); Elmegreen, Bruce G. [IBM T. J. Watson Research Center, PO Box 218, Yorktown Heights, New York 10598 (United States); Johnson, Megan [CSIRO Astronomy and Space Science P.O. Box 76, Epping, NSW 1710 Australia (Australia); Nidever, David L., E-mail: trisha.l.ashley@nasa.gov, E-mail: simpsonc@fiu.edu, E-mail: npokh001@fiu.edu, E-mail: bge@us.ibm.com, E-mail: megan.johnson@csiro.au, E-mail: dnidever@umich.edu [Department of Astronomy, University of Michigan Ann Arbor, MI, 48109 (United States)

    2014-12-01

    In this paper we analyze Very Large Array (VLA) telescope and Green Bank Telescope (GBT) atomic hydrogen (H I) data for the LITTLE THINGS (Local Irregulars That Trace Luminosity Extremes, The H I Nearby Galaxy Survey; https://science.nrao.edu/science/surveys/littlethings) blue compact dwarf galaxy IC 10. The VLA data allow us to study the detailed H I kinematics and morphology of IC 10 at high resolution while the GBT data allow us to search the surrounding area at high sensitivity for tenuous H I. IC 10's H I appears highly disturbed in both the VLA and GBT H I maps with a kinematically distinct northern H I extension, a kinematically distinct southern plume, and several spurs in the VLA data that do not follow the general kinematics of the main disk. We discuss three possible origins of its H I structure and kinematics in detail: a current interaction with a nearby companion, an advanced merger, and accretion of intergalactic medium. We find that IC 10 is most likely an advanced merger or a galaxy undergoing accretion.

  5. The H I chronicles of little things BCDs II: The origin of IC 10's H I structure

    International Nuclear Information System (INIS)

    Ashley, Trisha; Simpson, Caroline E.; Pokhrel, Nau Raj; Elmegreen, Bruce G.; Johnson, Megan; Nidever, David L.

    2014-01-01

    In this paper we analyze Very Large Array (VLA) telescope and Green Bank Telescope (GBT) atomic hydrogen (H I) data for the LITTLE THINGS (Local Irregulars That Trace Luminosity Extremes, The H I Nearby Galaxy Survey; https://science.nrao.edu/science/surveys/littlethings) blue compact dwarf galaxy IC 10. The VLA data allow us to study the detailed H I kinematics and morphology of IC 10 at high resolution while the GBT data allow us to search the surrounding area at high sensitivity for tenuous H I. IC 10's H I appears highly disturbed in both the VLA and GBT H I maps with a kinematically distinct northern H I extension, a kinematically distinct southern plume, and several spurs in the VLA data that do not follow the general kinematics of the main disk. We discuss three possible origins of its H I structure and kinematics in detail: a current interaction with a nearby companion, an advanced merger, and accretion of intergalactic medium. We find that IC 10 is most likely an advanced merger or a galaxy undergoing accretion.

  6. Radio Jets Clearing the Way Through a Galaxy: Watching Feedback in Action in the Seyfert Galaxy IC 5063

    NARCIS (Netherlands)

    Morganti, R.; Oosterloo, T. A.; Oonk, J. B. R.; Frieswijk, W.; Tadhunter, C. N.

    2015-01-01

    High-resolution (0.5 arcsec) CO(2-1) observations performed with the Atacama Large Millimetre/submillimetre Array have been used to trace the kinematics of the molecular gas in the Seyfert 2 galaxy{IC 5063}. Although one of the most radio-loud Seyfert galaxy, IC 5063 is a relatively weak radio

  7. Evaluation of patients skin dose undergoing interventional cardiology procedure using radiochromic films

    International Nuclear Information System (INIS)

    Silva, Mauro W. Oliveira da; Canevaro, Lucia V.; Rodrigues, Barbara B. Dias

    2011-01-01

    In interventional cardiology (IC), coronary angiography (CA) and percutaneous transluminal coronary angioplasty (PTCA) procedures are the most frequent ones. Since the 1990s, the number of IC procedures has increased rapidly. It is also known that these procedures are associated with high radiation doses due to long fluoroscopy time (FT) and large number of cine-frames (CF) acquired to document the procedure. Mapping skin doses in IC is useful to find the probability of skin injuries, to detect areas of overlapping field, and to get a permanent record of the most exposed areas of skin. The purpose of this study was to estimate the maximum skin dose (MSD) in patients undergoing CA and PTCA, and to compare these values with the reference levels proposed in the literature. Patients' dose measurements were carried out on a sample of 38 patients at the hemodynamic department, in four local hospitals in Rio de Janeiro, Brazil, using Gafchromic XR-RV2 films. In PTCA procedures, the median and third quartile values of MSD were estimated at 2.5 and 5.3 Gy, respectively. For the CA procedures, the median and third quartile values of MSD were estimated at 0.5 and 0.7 Gy, respectively. In this paper, we used the Pearson's correlation coefficient (r), and we found a fairly strong correlation between FT and MSD (r=0.8334, p<0.0001), for CA procedures. The 1 Gy threshold for deterministic effects was exceeded in nine patients. The use of Gafchromic XR-RV2 films was shown to be an effective method to measure MSD and the dose distribution map. The method is effective to identify the distribution of radiation fields, thus allowing the follow-up of the patient to investigate the appearance of skin injuries. (author)

  8. High-throughput film-densitometry: An efficient approach to generate large data sets

    Energy Technology Data Exchange (ETDEWEB)

    Typke, Dieter; Nordmeyer, Robert A.; Jones, Arthur; Lee, Juyoung; Avila-Sakar, Agustin; Downing, Kenneth H.; Glaeser, Robert M.

    2004-07-14

    A film-handling machine (robot) has been built which can, in conjunction with a commercially available film densitometer, exchange and digitize over 300 electron micrographs per day. Implementation of robotic film handling effectively eliminates the delay and tedium associated with digitizing images when data are initially recorded on photographic film. The modulation transfer function (MTF) of the commercially available densitometer is significantly worse than that of a high-end, scientific microdensitometer. Nevertheless, its signal-to-noise ratio (S/N) is quite excellent, allowing substantial restoration of the output to ''near-to-perfect'' performance. Due to the large area of the standard electron microscope film that can be digitized by the commercial densitometer (up to 10,000 x 13,680 pixels with an appropriately coded holder), automated film digitization offers a fast and inexpensive alternative to high-end CCD cameras as a means of acquiring large amounts of image data in electron microscopy.

  9. Recent Progress in Planetary Laboratory Astrophysics achieved with NASA Ames' COSmIC Facility

    Science.gov (United States)

    Salama, Farid; Sciamma-O'Brien, Ella; Bejaoui, Salma

    2016-10-01

    We describe the characteristics and the capabilities of the laboratory facility, COSmIC, that was developed at NASA Ames to generate, process and analyze interstellar, circumstellar and planetary analogs in the laboratory [1]. COSmIC stands for "Cosmic Simulation Chamber" and is dedicated to the study of neutral and ionized molecules and nanoparticles under the low temperature and high vacuum conditions that are required to simulate various space environments such as planetary atmospheres. COSmIC integrates a variety of state-of-the-art instruments that allow forming, processing and monitoring simulated space conditions for planetary, circumstellar and interstellar materials in the laboratory. The COSmIC experimental setup is composed of a Pulsed Discharge Nozzle (PDN) expansion, that generates a plasma in the stream of a free supersonic jet expansion, coupled to two high-sensitivity, complementary in situ diagnostics: a Cavity Ring Down Spectroscopy (CRDS) and laser induced fluorescence (LIF) systems for photonic detection [2, 3], and a Reflectron Time-Of-Flight Mass Spectrometer (ReTOF-MS) for mass detection [4].Recent results obtained using COSmIC will be highlighted. In particular, the progress that has been achieved in an on-going study investigating the formation and the characterization of laboratory analogs of Titan's aerosols generated from gas-phase molecular precursors [5] will be presented. Plans for future laboratory experiments on planetary molecules and aerosols in the growing field of planetary laboratory astrophysics will also be addressed, as well as the implications of studies underway for astronomical observations.References: [1] Salama F., in Organic Matter in Space, IAU S251, Kwok & Sandford eds, CUP, S251, 4, 357 (2008).[2] Biennier L., Salama, F., Allamandola L., & Scherer J., J. Chem. Phys., 118, 7863 (2003)[3] Tan X, & Salama F., J. Chem. Phys. 122, 84318 (2005)[4] Ricketts C., Contreras C., Walker, R., Salama F., Int. J. Mass Spec, 300

  10. Cardiovascular disease events and its predictors in women: Isfahan Cohort Study (ICS

    Directory of Open Access Journals (Sweden)

    Masoumeh Sadeghi

    2017-09-01

    Conclusion: In ICS, HTN, diabetes mellitus and high triglyceride are strong predictors for CV events in Iranian women. As almost all strong risk markers of CVD events are preventable, health policy makers have to give urgent consideration to make preventive public health strategies.

  11. Microstructure of ZnO thin films deposited by high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Reed, A.N., E-mail: amber.reed.5@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Shamberger, P.J. [Department of Materials Science and Engineering, Texas A& M University, College Station, TX 77843 (United States); Hu, J.J. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Muratore, C. [Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Bultman, J.E. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Voevodin, A.A., E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States)

    2015-03-31

    High power impulse magnetron sputtering was used to deposit thin (~ 100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates heated to 150 °C. The resulting films had strong crystallinity, highly aligned (002) texture and low surface roughness (root mean square roughness less than 10 nm), as determined by X-ray diffraction, transmission electron microscopy, scanning electron microscopy and atomic force spectroscopy measurements. Deposition pressure and target–substrate distance had the greatest effect on film microstructure. The degree of alignment in the films was strongly dependent on the gas pressure. Deposition at pressures less than 0.93 Pa resulted in a bimodal distribution of grain sizes. An initial growth layer with preferred orientations (101) and (002) parallel to the interface was observed at the film–substrate interface under all conditions examined here; the extent of that competitive region was dependent on growth conditions. Time-resolved current measurements of the target and ion energy distributions, determined using energy resolved mass spectrometry, were correlated to film microstructure in order to investigate the effect of plasma conditions on film nucleation and growth. - Highlights: • Low temperature growth of nanocrystalline zinc oxide (ZnO) films. • ZnO films had a highly (002) textured, smooth, dense microstructure. • Dominant (002) orientation of films was pressure dependent. • Interfacial (101)/(002) mixed orientation layer controlled by substrate location.

  12. High proton conductivity in the molecular interlayer of a polymer nanosheet multilayer film.

    Science.gov (United States)

    Sato, Takuma; Hayasaka, Yuta; Mitsuishi, Masaya; Miyashita, Tokuji; Nagano, Shusaku; Matsui, Jun

    2015-05-12

    High proton conductivity was achieved in a polymer multilayer film with a well-defined two-dimensional lamella structure. The multilayer film was prepared by deposition of poly(N-dodecylacryamide-co-acrylic acid) (p(DDA/AA)) monolayers onto a solid substrate using the Langmuir-Blodgett technique. Grazing-angle incidence X-ray diffraction measurement of a 30-layer film of p(DDA/AA) showed strong diffraction peaks in the out-of-plane direction at 2θ = 2.26° and 4.50°, revealing that the multilayer film had a highly uniform layered structure with a monolayer thickness of 2.0 nm. The proton conductivity of the p(DDA/AA) multilayer film parallel to the layer plane direction was 0.051 S/cm at 60 °C and 98% relative humidity with a low activation energy of 0.35 eV, which is comparable to perfluorosulfonic acid membranes. The high conductivity and low activation energy resulted from the formation of uniform two-dimensional proton-conductive nanochannels in the hydrophilic regions of the multilayer film. The proton conductivity of the multilayer film perpendicular to the layer plane was determined to be 2.1 × 10(-13) S/cm. Therefore, the multilayer film showed large anisotropic conductivity with an anisotropic ratio of 2.4 × 10(11).

  13. Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C., E-mail: gadkari@barc.gov.in

    2016-02-21

    Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the <200> direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

  14. Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

    International Nuclear Information System (INIS)

    Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C.

    2016-01-01

    Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

  15. Mismatch and noise in modern IC processes

    CERN Document Server

    Marshall, Andrew

    2009-01-01

    Component variability, mismatch, and various noise effects are major contributors to design limitations in most modern IC processes. Mismatch and Noise in Modern IC Processes examines these related effects and how they affect the building block circuits of modern integrated circuits, from the perspective of a circuit designer.Variability usually refers to a large scale variation that can occur on a wafer to wafer and lot to lot basis, and over long distances on a wafer. This phenomenon is well understood and the effects of variability are included in most integrated circuit design with the use

  16. 30 CFR 57.22209 - Auxiliary fans (I-C mines).

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Auxiliary fans (I-C mines). 57.22209 Section 57... Standards for Methane in Metal and Nonmetal Mines Ventilation § 57.22209 Auxiliary fans (I-C mines). Electric auxiliary fans shall be approved by MSHA under the applicable requirements of 30 CFR part 18...

  17. Matchline dosimetry in step and shoot IMRT fields: a film study

    International Nuclear Information System (INIS)

    Tangboonduangjit, P; Metcalfe, P; Butson, M; Quach, K Y; Rosenfeld, A

    2004-01-01

    The Varian millennium 120 multileaf collimator has curved leaf ends. Transmission through the leaf ends generates a small asymmetric penumbral dose effect. This design can lead to hot spots between neighbouring beam segments during step and shoot IMRT dose delivery. We have observed some matchlines with film for clinical beams optimized using the pinnacle radiotherapy treatment planning system; hence we sought to verify the optimum leaf offset required to minimize the matchline effect. An in-house program was created to control the MLC leaf banks in 2 cm steps with a 2 cm gap. The gap was varied by the following offset values from 0.0 to 0.1 cm. Two types of radiographic films (Kodak EDR and XV films) and a radiochromic film (Gafchromic MD-55-2) were used to measure the optical density maps. The films were positioned in a solid water phantom perpendicular to the beam axis and irradiated at d max using a 6 MV photon beam. An ion chamber (IC4) was used to measure point doses for normalization in a beam umbral minima position. The relative mean peak to valley dose ratios measured with no leaf offset were 1.31, 1.30 and 1.31 for the XV, EDR2 and Gafchromic films, respectively. For a 0.07 cm gap per leaf and a performance of end leaf repeatability of 0.01 cm, the central matchline was reduced to about 1.0 for all dosimeters, with two mini-peaks measured as 1.05, 1.05 and 1.08 each side of the matchline, for XV, EDR2 and Gafchromic, respectively. The average relative dose across the umbra for this offset was XO-mat V = 1.01, EDR = 1.01 and radiochromic film = 1.02, respectively. While we expected the beam penumbral tails from segment neighbours to cause overprediction of the dose in the central valley regions due to the energy response of radiographic films, by normalizing all dosimeters to an ion chamber reading in the minimum we could not observe any major shape distortion between the radiographic film and radiochromic film results. In conclusion, relative doses

  18. Highly stable carbon-doped Cu films on barrierless Si

    International Nuclear Information System (INIS)

    Zhang, X.Y.; Li, X.N.; Nie, L.F.; Chu, J.P.; Wang, Q.; Lin, C.H.; Dong, C.

    2011-01-01

    Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 deg. C for 1 h, the resistivity maintains a low level at 2.7 μΩ-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance.

  19. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    Energy Technology Data Exchange (ETDEWEB)

    None

    2008-06-30

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology

  20. SURFACE FILMS TO SUPPRESS FIELD EMISSION IN HIGH-POWER MICROWAVE COMPONENTS

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay l

    2014-02-07

    Results are reported on attempts to reduce the RF breakdown probability on copper accelerator structures by applying thin surface films that could suppress field emission of electrons. Techniques for application and testing of copper samples with films of metals with work functions higher than copper are described, principally for application of platinum films, since platinum has the second highest work function of any metal. Techniques for application of insulating films are also described, since these can suppress field emission and damage on account of dielectric shielding of fields at the copper surface, and on account of the greater hardness of insulating films, as compared with copper. In particular, application of zirconium oxide films on high-field portions of a 11.424 GHz SLAC cavity structure for breakdown tests are described.

  1. Misfit dislocations and phase transformations in high-T sub c superconducting films

    CERN Document Server

    Gutkin, M Y

    2002-01-01

    A theoretical model is suggested that describes the effects of misfit stresses on defect structures, phase content and critical transition temperature T sub c in high-T sub c superconducting films. The focus is placed on the exemplary case of YBaCuO films deposited onto LaSrAlO sub 4 substrates. It is theoretically revealed here that misfit stresses are capable of inducing phase transformations controlled by the generation of misfit dislocations in growing cuprate films. These transformations, in the framework of the suggested model, account for experimental data on the influence of the film thickness on phase content and critical temperature T sub c of superconducting cuprate films, reported in the literature. The potential role of stress-assisted phase transformations in suppression of critical current density across grain boundaries in high-T sub c superconductors is briefly discussed.

  2. Final report: High current capacity high temperature superconducting film based tape for high field magnets

    International Nuclear Information System (INIS)

    Ying Xin

    2000-01-01

    The primary goal of the program was to establish the process parameters for the continuous deposition of high quality, superconducting YBCO films on one meter lengths of buffered RABiTS tape using MOCVD and to characterize the potential utility of the resulting tapes in high field magnet applications

  3. Study on Mine Emergency Mechanism based on TARP and ICS

    Science.gov (United States)

    Xi, Jian; Wu, Zongzhi

    2018-01-01

    By analyzing the experiences and practices of mine emergency in China and abroad, especially the United States and Australia, normative principle, risk management principle and adaptability principle of constructing mine emergency mechanism based on Trigger Action Response Plans (TARP) and Incident Command System (ICS) are summarized. Classification method, framework, flow and subject of TARP and ICS which are suitable for the actual situation of domestic mine emergency are proposed. The system dynamics model of TARP and ICS is established. The parameters such as evacuation ratio, response rate, per capita emergency capability and entry rate of rescuers are set up. By simulating the operation process of TARP and ICS, the impact of these parameters on the emergency process are analyzed, which could provide a reference and basis for building emergency capacity, formulating emergency plans and setting up action plans in the emergency process.

  4. Prometheus Reactor I&C Software Development Methodology, for Action

    Energy Technology Data Exchange (ETDEWEB)

    T. Hamilton

    2005-07-30

    The purpose of this letter is to submit the Reactor Instrumentation and Control (I&C) software life cycle, development methodology, and programming language selections and rationale for project Prometheus to NR for approval. This letter also provides the draft Reactor I&C Software Development Process Manual and Reactor Module Software Development Plan to NR for information.

  5. High quality TbMnO3 films deposited on YAlO3

    International Nuclear Information System (INIS)

    Glavic, Artur; Voigt, Joerg; Persson, Joerg; Su, Yixi; Schubert, Juergen; Groot, Joost de; Zande, Willi; Brueckel, Thomas

    2011-01-01

    Research highlights: → We found a good substrate and suitable deposition parameters to create untwinned, epitaxial thin films of TbMnO 3 . → Laboratory experiments prove the crystalline quality of the films. → We were able to measure the micro magnetic structure in the films by polarized neutron diffraction (to our knowledge the first neutron investigations on TbMnO 3 thin films). - Abstract: High quality thin films of TbMnO 3 were grown by pulsed laser deposition on orthorhombicYAlO 3 (1 0 0). The interface and surface roughness of a 55 nm thick film were probed by X-ray reflectometry and atomic force microscopy, yielding a roughness of 1 nm. X-ray diffraction revealed untwinned films and a small mosaic spread of 0.04 o and 0.2 o for out-of-plane and in-plane reflections, respectively. This high degree of epitaxy was also confirmed by Rutherford backscattering spectrometry. Using polarized neutron diffraction we could identify a magnetic structure with the propagation vector (0 0.27 0), identical to the bulk magnetic structure of TbMnO 3 .

  6. Fabrication of a flexible polycarbonate/porphyrin film dosimeter for high dose dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Feizi, Shahzad [Nuclear Science and Technology Research Institute (NSTRI), Tehran (Iran, Islamic Republic of). Radiation Application Research School

    2017-10-01

    Dyed polycarbonate (PC) Radiochromic films with 20 μm thickness were prepared by casting of organic solution of PC containing 0.5 wt.% tetrakis (pentafluorophenyl) porphyrin (TPPF{sub 20}) on a glass petri dish. Characterization of the film as a routine dosimeter was studied. On subjecting PC/TPPF{sub 20} film dosimeter to gamma radiation, a gradual decrease in the color of films was observed. The sensitivity of these films and the linearity of dose-response curves were studied under {sup 60}Co γ-rays expose in dose range of 0-100 kGy. The results were compared with the commercial and non-commercial dosimeters. Experimental parameters including humidity, temperature and pre-irradiation (shelf-life) and post-irradiation storage in dark and in indirect sunlight were examined. The maximum absorbance of soret band of TPPF{sub 20} had a bathochromic shift and appeared at 414 nm which remained intact in the investigated dose range. The dyed films characteristics were found to be stable enough in media with high degrees of temperature and humidity. The results indicate that radiation induced decoloration of PC/TPPF{sub 20} films can be reliably used in high dose dosimetry.

  7. A search for extragalactic pulsars in the local group galaxies IC 10 and Barnard’s galaxy

    International Nuclear Information System (INIS)

    Al Noori, H; Roberts, M S E; Champion, D; McLaughlin, M; Ransom, Scott; Ray, P S

    2017-01-01

    As of today, more than 2500 pulsars have been found, nearly all in the Milky Way, with the exception of ∼28 pulsars in the Small and Large Magellanic Clouds. However, there have been few published attempts to search for pulsars deeper in our Galactic neighborhood. Two of the more promising Local Group galaxies are IC 10 and NGC 6822 (also known as Barnard’s Galaxy) due to their relatively high star formation rate and their proximity to our galaxy. IC 10 in particular, holds promise as it is the closest starburst galaxy to us and harbors an unusually high number of Wolf-Rayet stars, implying the presence of many neutron stars. We observed IC 10 and NGC 6822 at 820 MHz with the Green Bank Telescope for ∼15 and 5 hours respectively, and put a strong upper limit of 0.1 mJy on pulsars in either of the two galaxies. We also performed single pulse searches of both galaxies with no firm detections. (paper)

  8. On the importance of specific heats as regards efficiency increases for highly dilute IC engines

    International Nuclear Information System (INIS)

    Caton, Jerald A.

    2014-01-01

    Highlights: • Importance of specific heats towards increasing engine efficiency was quantified. • Decreases of specific heats contribute 3.5–6.3% (abs) to the efficiency. • Dilute engines benefit from decreases of specific heats due to lower temperatures. - Abstract: Engineering and scientific efforts continue with the development of advanced, IC engines using highly dilute mixtures, and relatively high compression ratios. Such engines are known to provide opportunities for low emissions as well as high efficiencies. The main features of these engines include higher compression ratios, lean operation, use of EGR, and shorter burn durations. First, this study reviews the quantitative contributions of each of these features as determined by an engine cycle simulation. Second, this study provides the quantitative contributions to the increased efficiency in terms of fundamental thermodynamic considerations. An automotive engine operated at 2000 rpm was selected for this study. For the conditions examined, the net indicated thermal efficiency increased from 37.0% (conventional engine) to 53.9% (high efficiency engine) – for an incremental increase of 16.9% (absolute). The contribution of increases of the ratio of specific heats towards the final thermal efficiency is quantified. This aspect has been well known, but has not been quantified for actual engines. For the various conditions examined, 21–35% of the total efficiency improvement was estimated to be due to the increase of the ratio of specific heats

  9. Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

    Science.gov (United States)

    Fischer, A. M.; Wei, Y. O.; Ponce, F. A.; Moseley, M.; Gunning, B.; Doolittle, W. A.

    2013-09-01

    We have studied the properties of thick InxGa1-xN films, with indium content ranging from x ˜ 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x ˜ 0.6. Surprisingly, the InxGa1-xN film with x ˜ 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (˜400 °C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions.

  10. Ambipolar SnOx thin-film transistors achieved at high sputtering power

    Science.gov (United States)

    Li, Yunpeng; Yang, Jia; Qu, Yunxiu; Zhang, Jiawei; Zhou, Li; Yang, Zaixing; Lin, Zhaojun; Wang, Qingpu; Song, Aimin; Xin, Qian

    2018-04-01

    SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOx TFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 °C in ambient air. X-ray-diffraction patterns showed polycrystallisation of SnO and Sn in the annealed SnOx films. Scanning-electron-microscopy images revealed that microgrooves appeared after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggest that they were most likely Sn clusters. Atomic force microscopy images indicate an abrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has generally been thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film to enhance the stoichiometric balance.

  11. The origin of local strain in highly epitaxial oxide thin films.

    Science.gov (United States)

    Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

    2013-10-31

    The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

  12. High Performance Thin-Film Composite Forward Osmosis Membrane

    KAUST Repository

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A.; Schiffman, Jessica D.; Elimelech, Menachem

    2010-01-01

    obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed

  13. Development of highly-ordered, ferroelectric inverse opal films using sol gel infiltration

    Science.gov (United States)

    Matsuura, N.; Yang, S.; Sun, P.; Ruda, H. E.

    2005-07-01

    Highly-ordered, ferroelectric, Pb-doped Ba0.7Sr0.3TiO3, inverse opal films were fabricated by spin-coating a sol gel precursor into a polystyrene artificial opal template followed by heat treatment. Thin films of the ferroelectric were independently studied and were shown to exhibit good dielectric properties and high refractive indices. The excellent quality of the final inverse opal film using this spin-coating infiltration method was confirmed by scanning electron microscopy images and the good correspondence between optical reflection data and theoretical simulations. Using this method, the structural and material parameters of the final ferroelectric inverse opal film were easily adjusted by template heating and through repeated infiltrations, without changes in the initial template or precursor. Also, crack-free inverse opal thin films were fabricated over areas comparable to that of the initial crack-free polystyrene template (˜100 by 100 μm2).

  14. Simulation of SEU transients in CMOS ICs

    International Nuclear Information System (INIS)

    Kaul, N.; Bhuva, B.L.; Kerns, S.E.

    1991-01-01

    This paper reports that available analytical models of the number of single-event-induced errors (SEU) in combinational logic systems are not easily applicable to real integrated circuits (ICs). An efficient computer simulation algorithm set, SITA, predicts the vulnerability of data stored in and processed by complex combinational logic circuits to SEU. SITA is described in detail to allow researchers to incorporate it into their error analysis packages. Required simulation algorithms are based on approximate closed-form equations modeling individual device behavior in CMOS logic units. Device-level simulation is used to estimate the probability that ion-device interactions produce erroneous signals capable of propagating to a latch (or n output node), and logic-level simulation to predict the spread of such erroneous, latched information through the IC. Simulation results are compared to those from SPICE for several circuit and logic configurations. SITA results are comparable to this established circuit-level code, and SITA can analyze circuits with state-of-the-art device densities (which SPICE cannot). At all IC complexity levels, SITAS offers several factors of 10 savings in simulation time over SPICE

  15. The Search for Wolf-Rayet Stars in IC10

    Science.gov (United States)

    Tehrani, Katie; Crowther, Paul; Archer, Isabelle

    2017-11-01

    We present a deep imaging and spectroscopic survey of the Local Group starburst galaxy IC10 using Gemini North/GMOS to unveil the global Wolf-Rayet population. It has previously been suggested that for IC10 to follow the WC/WN versus metallicity dependence seen in other Local Group galaxies, a large WN population must remain undiscovered. Our search revealed 3 new WN stars, and 5 candidates awaiting confirmation, providing little evidence to support this claim. We also compute an updated nebular derived metallicity of log(O/H)+12=8.40 +/- 0.04 for the galaxy using the direct method. Inspection of IC10 WR average line luminosities show these stars are more similar to their LMC, rather than SMC counterparts.

  16. Highly conductive and flexible color filter electrode using multilayer film structure

    Science.gov (United States)

    Han, Jun Hee; Kim, Dong-Young; Kim, Dohong; Choi, Kyung Cheol

    2016-07-01

    In this paper, a high performance flexible component that serves as a color filter and an electrode simultaneously is suggested. The suggested highly conductive and flexible color filter electrode (CFE) has a multilayer film structure composed of silver (Ag) and tungsten trioxide (WO3). The CFE maintained its color filtering capability even when the films were bent on a polyethylene terephthalate (PET) film. Low sheet resistance of the CFE was obtained using WO3 as a bridge layer that connects two Ag layers electrically. The sheet resistance was less than 2 Ω/sq. and it was negligibly changed after bending the film, confirming the flexibility of the CFE. The CFE can be easily fabricated using a thermal evaporator and is easily patterned by photolithography or a shadow mask. The proposed CFE has enormous potential for applications involving optical devices including large area devices and flexible devices.

  17. Microstructure and high-temperature tribological properties of Si-doped hydrogenated diamond-like carbon films

    Science.gov (United States)

    Zhang, Teng Fei; Wan, Zhi Xin; Ding, Ji Cheng; Zhang, Shihong; Wang, Qi Min; Kim, Kwang Ho

    2018-03-01

    Si-doped DLC films have attracted great attention for use in tribological applications. However, their high-temperature tribological properties remain less investigated, especially in harsh oxidative working conditions. In this study, Si-doped hydrogenated DLC films with various Si content were synthesized and the effects of the addition of Si on the microstructural, mechanical and high-temperature tribological properties of the films were investigated. The results indicate that Si doping leads to an obvious increase in the sp3/sp2 ratio of DLC films, likely due to the silicon atoms preferentially substitute the sp2-hybridized carbon atoms and augment the number of sp3 sites. With Si doping, the mechanical properties, including hardness and adhesion strength, were improved, while the residual stress of the DLC films was reduced. The addition of Si leads to higher thermal and mechanical stability of DLC films because the Si atoms inhibit the graphitization of the films at an elevated temperature. Better high-temperature tribological properties of the Si-DLC films under oxidative conditions were observed, which can be attributed to the enhanced thermal stability and formation of a Si-containing lubricant layer on the surfaces of the wear tracks. The nano-wear resistance of the DLC films was also improved by Si doping.

  18. Silver Nanowire Transparent Conductive Films with High Uniformity Fabricated via a Dynamic Heating Method.

    Science.gov (United States)

    Jia, Yonggao; Chen, Chao; Jia, Dan; Li, Shuxin; Ji, Shulin; Ye, Changhui

    2016-04-20

    The uniformity of the sheet resistance of transparent conductive films is one of the most important quality factors for touch panel applications. However, the uniformity of silver nanowire transparent conductive films is far inferior to that of indium-doped tin oxide (ITO). Herein, we report a dynamic heating method using infrared light to achieve silver nanowire transparent conductive films with high uniformity. This method can overcome the coffee ring effect during the drying process and suppress the aggregation of silver nanowires in the film. A nonuniformity factor of the sheet resistance of the as-prepared silver nanowire transparent conductive films could be as low as 6.7% at an average sheet resistance of 35 Ω/sq and a light transmittance of 95% (at 550 nm), comparable to that of high-quality ITO film in the market. In addition, a mechanical study shows that the sheet resistance of the films has little change after 5000 bending cycles, and the film could be used in touch panels for human-machine interactive input. The highly uniform and mechanically stable silver nanowire transparent conductive films meet the requirement for many significant applications and could play a key role in the display market in a near future.

  19. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  20. High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals.

    Science.gov (United States)

    Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J; Zhang, Yanliang

    2016-09-12

    Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm(2) with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.

  1. Anatomy of a merger - CO in Arp 299 (IC 694-NGC 3690)

    International Nuclear Information System (INIS)

    Sargent, A.; Scoville, N.

    1991-01-01

    High-resolution (2.4-arcsec) CO observations of the interacting system Arp 299 (Mrk 171: IC 694 and NGC 3690) reveal major gas condensations at the nuclei of both galaxies and in the disk overlap region. The 0.9 x 10 to the 9th solar masses of H2 at the nucleus of NGC 3690 extends to radii of 310 pc and probably sustains a starburst. A compact source (radius not greater than 250 pc) of mass 3.9 x 10 to the 9th solar masses is found at the nucleus of IC 694; this galaxy may harbor an AGN. At least three discrete subcondensations, probably active star-forming knots, are detected in the 1800 x 640 pc overlap region. 24 refs

  2. A low-power CMOS readout IC design for bolometer applications

    Science.gov (United States)

    Galioglu, Arman; Abbasi, Shahbaz; Shafique, Atia; Ceylan, Ömer; Yazici, Melik; Kaynak, Mehmet; Durmaz, Emre C.; Arsoy, Elif Gul; Gurbuz, Yasar

    2017-02-01

    A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pixels with a capacitive transimpedance amplifier (CTIA) input stage and column parallel integration with serial readout. The ROIC is designed for use in high (>= 4 %/K) TCR and high detector resistance Si/SiGe microbolometers with 17x17 μm2 pixel sizes in development. The prototype has been designed and fabricated in 0.25- μm SiGe:C BiCMOS process.

  3. The film thickness dependent thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Xiao Xiudi; Xu Gang, E-mail: xiudixiao@163.com; Xiong Bin; Chen Deming; Miao Lei [Chinese Academy of Sciences, Key Laboratory of Renewable Energy and Gas Hydrates, Guangzhou Institute of Energy Conversion (China)

    2012-03-15

    The monolayer Al{sub 2}O{sub 3}:Ag thin films were prepared by magnetron sputtering. The microstructure and optical properties of thin film after annealing at 700 Degree-Sign C in air were characterized by transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometer. It revealed that the particle shape, size, and distribution across the film were greatly changed before and after annealing. The surface plasmon resonance absorption and thermal stability of the film were found to be strongly dependent on the film thickness, which was believed to be associated with the evolution process of particle diffusion, agglomeration, and evaporation during annealing at high temperature. When the film thickness was smaller than 90 nm, the film SPR absorption can be attenuated until extinct with increasing annealing time due to the evaporation of Ag particles. While the film thickness was larger than 120 nm, the absorption can keep constant even after annealing for 64 h due to the agglomeration of Ag particles. On the base of film thickness results, the multilayer Al{sub 2}O{sub 3}:Ag solar selective thin films were prepared and the thermal stability test illustrated that the solar selectivity of multilayer films with absorbing layer thickness larger than 120 nm did not degrade after annealing at 500 Degree-Sign C for 70 h in air. It can be concluded that film thickness is an important factor to control the thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers.

  4. Physical Conditions in Shocked Interstellar Gas Interacting with the Supernova Remnant IC 443

    Science.gov (United States)

    Ritchey, Adam M.; Federman, Steven Robert; Jenkins, Edward B.; Caprioli, Damiano; Wallerstein, George

    2018-06-01

    We present the results of a detailed investigation into the physical conditions in interstellar material interacting with the supernova remnant IC 443. Our analysis is based on an examination of high-resolution HST/STIS spectra of two stars probing predominantly neutral gas located both ahead of and behind the supernova shock front. The pre-shock neutral gas is characterized by densities and temperatures typical of diffuse interstellar clouds, while the post-shock material exhibits a range of more extreme physical conditions, including high temperatures (>104 K) in some cases, which may require a sudden heating event to explain. The ionization level is enhanced in the high-temperature post-shock material, which could be the result of enhanced radiation from shocks or from an increase in cosmic-ray ionization. The gas-phase abundances of refractory elements are also enhanced in the high-pressure gas, suggesting efficient destruction of dust grains by shock sputtering. Observations of highly-ionized species at very high velocity indicate a post-shock temperature of 107 K for the hot X-ray emitting plasma of the remnant’s interior, in agreement with studies of thermal X-ray emission from IC 443.

  5. Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

    Science.gov (United States)

    Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

    2014-03-01

    In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

  6. Structure and magnetic properties of highly textured nanocrystalline Mn–Zn ferrite thin film

    Energy Technology Data Exchange (ETDEWEB)

    Joseph, Jaison, E-mail: jaisonjosephp@gmail.com [Department of Physics, Goverment College, Khandola, Goa 403107 India (India); Tangsali, R.B. [Department of Physics, Goa University, Taleigao Plateau, Goa 403206 India (India); Pillai, V.P. Mahadevan [Department of Optoelectronics, University of Kerala,Thiruvananthapuram, Kerala 695581 India (India); Choudhary, R.J.; Phase, D.M.; Ganeshan, V. [UGC-DAE-CSR Indore, Madhya Pradesh 452017 India. (India)

    2015-01-01

    Nanoparticles of Mn{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} were chemically synthesized by co-precipitating the metal ions in aqueous solutions in a suitable alkaline medium. The identified XRD peaks confirm single phase spinal formation. The nanoparticle size authentication is carried out from XRD data using Debye Scherrer equation. Thin film fabricated from this nanomaterial by pulse laser deposition technique on quartz substrate was characterized using XRD and Raman spectroscopic techniques. XRD results revealed the formation of high degree of texture in the film. AFM analysis confirms nanogranular morphology and preferred directional growth. A high deposition pressure and the use of a laser plume confined to a small area for transportation of the target species created certain level of porosity in the deposited thin film. Magnetic property measurement of this highly textured nanocrystalline Mn–Zn ferrite thin film revealed enhancement in properties, which are explained on the basis of texture and surface features originated from film growth mechanism.

  7. High energy density and efficiency achieved in nanocomposite film capacitors via structure modulation

    Science.gov (United States)

    Zeng, Yi; Shen, Zhong-Hui; Shen, Yang; Lin, Yuanhua; Nan, Ce-Wen

    2018-03-01

    Flexible dielectric polymer films with high energy storage density and high charge-discharge efficiency have been considered as promising materials for electrical power applications. Here, we design hierarchical structured nanocomposite films using nonlinear polymer poly(vinylidene fluoride-HFP) [P(VDF-HFP)] with inorganic h-boron nitride (h-BN) nanosheets by electrospinning and hot-pressing methods. Our results show that the addition of h-BN nanosheets and the design of the hierarchical multilayer structure in the nanocomposites can remarkably enhance the charge-discharge efficiency and energy density. A high charge-discharge efficiency of 78% and an energy density of 21 J/cm3 can be realized in the 12-layered PVDF/h-BN nanocomposite films. Phase-field simulation results reveal that the spatial distribution of the electric field in these hierarchical structured films affects the charge-discharge efficiency and energy density. This work provides a feasible route, i.e., structure modulation, to improve the energy storage performances for nanocomposite films.

  8. High energy density capacitors fabricated by thin film technology

    International Nuclear Information System (INIS)

    Barbee, T W; Johnson, G W; Wagner, A V.

    1999-01-01

    Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

  9. Application of IC Card License for Road Transportation in Commercial Vehicles Supervision and Service

    Directory of Open Access Journals (Sweden)

    Li Weiwei

    2016-01-01

    Full Text Available IC card electronic license for road transport includes the IC card commercial vehicle’s certificate and IC card practitioner’s qualification certificate. In China, the IC card electronic license for road transport is the electronic ID card which must be carried by each commercial vehicles and practitioners. This paper briefly introduces the basic situation, data format and security keys architecture of IC card electronic license for road transportation of China. In order to strengthen the supervision and service of commercial vehicles, this paper puts forward the overall application framework of IC card electronic license for road transport. The application examples of IC card license in the supervision of passenger station, dangerous goods transport management, governance overload and logistics park and port area management are discussed. The practical application results show that the application of IC card electronic license for road transport is an important technical means to improve the supervision ability and service quality of the road transportation industry.

  10. Evaluation of Gafchromic EBT-XD film, with comparison to EBT3 film, and application in high dose radiotherapy verification

    Science.gov (United States)

    Palmer, Antony L.; Dimitriadis, Alexis; Nisbet, Andrew; Clark, Catharine H.

    2015-11-01

    There is renewed interest in film dosimetry for the verification of dose delivery of complex treatments, particularly small fields, compared to treatment planning system calculations. A new radiochromic film, Gafchromic EBT-XD, is available for high-dose treatment verification and we present the first published evaluation of its use. We evaluate the new film for MV photon dosimetry, including calibration curves, performance with single- and triple-channel dosimetry, and comparison to existing EBT3 film. In the verification of a typical 25 Gy stereotactic radiotherapy (SRS) treatment, compared to TPS planned dose distribution, excellent agreement was seen with EBT-XD using triple-channel dosimetry, in isodose overlay, maximum 1.0 mm difference over 200-2400 cGy, and gamma evaluation, mean passing rate 97% at 3% locally-normalised, 1.5 mm criteria. In comparison to EBT3, EBT-XD gave improved evaluation results for the SRS-plan, had improved calibration curve gradients at high doses, and had reduced lateral scanner effect. The dimensions of the two films are identical. The optical density of EBT-XD is lower than EBT3 for the same dose. The effective atomic number for both may be considered water-equivalent in MV radiotherapy. We have validated the use of EBT-XD for high-dose, small-field radiotherapy, for routine QC and a forthcoming multi-centre SRS dosimetry intercomparison.

  11. Evaluation of Gafchromic EBT-XD film, with comparison to EBT3 film, and application in high dose radiotherapy verification

    International Nuclear Information System (INIS)

    Palmer, Antony L; Dimitriadis, Alexis; Nisbet, Andrew; Clark, Catharine H

    2015-01-01

    There is renewed interest in film dosimetry for the verification of dose delivery of complex treatments, particularly small fields, compared to treatment planning system calculations. A new radiochromic film, Gafchromic EBT-XD, is available for high-dose treatment verification and we present the first published evaluation of its use. We evaluate the new film for MV photon dosimetry, including calibration curves, performance with single- and triple-channel dosimetry, and comparison to existing EBT3 film. In the verification of a typical 25 Gy stereotactic radiotherapy (SRS) treatment, compared to TPS planned dose distribution, excellent agreement was seen with EBT-XD using triple-channel dosimetry, in isodose overlay, maximum 1.0 mm difference over 200–2400 cGy, and gamma evaluation, mean passing rate 97% at 3% locally-normalised, 1.5 mm criteria. In comparison to EBT3, EBT-XD gave improved evaluation results for the SRS-plan, had improved calibration curve gradients at high doses, and had reduced lateral scanner effect. The dimensions of the two films are identical. The optical density of EBT-XD is lower than EBT3 for the same dose. The effective atomic number for both may be considered water-equivalent in MV radiotherapy. We have validated the use of EBT-XD for high-dose, small-field radiotherapy, for routine QC and a forthcoming multi-centre SRS dosimetry intercomparison. (paper)

  12. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  13. Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.

    Science.gov (United States)

    Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae

    2014-04-23

    A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. ICECAP: an integrated, general-purpose, automation-assisted IC50/EC50 assay platform.

    Science.gov (United States)

    Li, Ming; Chou, Judy; King, Kristopher W; Jing, Jing; Wei, Dong; Yang, Liyu

    2015-02-01

    IC50 and EC50 values are commonly used to evaluate drug potency. Mass spectrometry (MS)-centric bioanalytical and biomarker labs are now conducting IC50/EC50 assays, which, if done manually, are tedious and error-prone. Existing bioanalytical sample preparation automation systems cannot meet IC50/EC50 assay throughput demand. A general-purpose, automation-assisted IC50/EC50 assay platform was developed to automate the calculations of spiking solutions and the matrix solutions preparation scheme, the actual spiking and matrix solutions preparations, as well as the flexible sample extraction procedures after incubation. In addition, the platform also automates the data extraction, nonlinear regression curve fitting, computation of IC50/EC50 values, graphing, and reporting. The automation-assisted IC50/EC50 assay platform can process the whole class of assays of varying assay conditions. In each run, the system can handle up to 32 compounds and up to 10 concentration levels per compound, and it greatly improves IC50/EC50 assay experimental productivity and data processing efficiency. © 2014 Society for Laboratory Automation and Screening.

  15. Performance of high amylose starch-composited gelatin films influenced by gelatinization and concentration.

    Science.gov (United States)

    Wang, Wenhang; Wang, Kun; Xiao, Jingdong; Liu, Yaowei; Zhao, Yana; Liu, Anjun

    2017-01-01

    In order to study the impact of starch in film performance, high amylose corn starch was composited in gelatin films under different gelatinization conditions and, in high and low concentrations (10 and 50wt.%). It was found that hot water gelatinized starch (Gel-Shw) increased film mechanical strength and was dependent upon the starch concentration. The addition of an alkali component to the starch significantly enhanced the swelling of the starch granules and expedited the gelatinization process. Incorporation of starch, especially the alkalized starch (Sha), into the gelatin films decreased film solubility which improved its water resistance and water vapor permeability (WVP). Multiple techniques (DSC, TGA, FT-IR, and XRD) were used to characterize the process and results, including the crosslinking of the dissolved starch molecules and the particles formed from gelatinized starch during retrogradation process, which played an important role in improving the thermal stability of the composited gelatin films. Overall, the starch-gelatin composition provides a potential approach to improve gelatin film performance and benefit its applications in the food industry. Copyright © 2016 Elsevier B.V. All rights reserved.

  16. Synthesis of polymer/inorganic nanocomposite films using highly porous inorganic scaffolds.

    Science.gov (United States)

    Zhang, Huanjun; Popp, Matthias; Hartwig, Andreas; Mädler, Lutz

    2012-04-07

    Polymeric/inorganic nanocomposite films have been fabricated through a combination of flame-spray-pyrolysis (FSP) made inorganic scaffold and surface initiated polymerization of cyanoacrylate. The highly porous structure of pristine SnO(2) films allows the uptake of cyanoacrylate and the polymerization is surface initiated by the water adsorbed onto the SnO(2) surface. Scanning electron microscopy study reveals a nonlinear increase in the composite particle size and the film thickness with polymerization time. The structural change is rather homogeneous throughout the whole layer. The composite is formed mainly by an increase of the particle size and not by just filling the existing pores. High-resolution transmission electron microscopy imaging shows SnO(2) nanoparticles embedded in the polymeric matrix, constituting the nanocomposite material. Thermogravimetric analysis indicates that the porosity of the nanocomposite films decreases from 98% to 75%, resulting in a significant enhancement of the hardness of the films. DC conductivity measurements conducted in situ on the nanocomposite layer suggest a gradual increase in the layer resistance, pointing to a loss of connectivity between the SnO(2) primary particles as the polymerization proceeds. This journal is © The Royal Society of Chemistry 2012

  17. 30 CFR 57.22203 - Main fan operation (I-C mines).

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Main fan operation (I-C mines). 57.22203... Standards for Methane in Metal and Nonmetal Mines Ventilation § 57.22203 Main fan operation (I-C mines). Main fans shall be operated continuously while ore production is in progress. ...

  18. Simultaneous detection of three lily viruses using Triplex IC-RT-PCR.

    Science.gov (United States)

    Zhang, Yubao; Wang, Yajun; Xie, Zhongkui; Yang, Guo; Guo, Zhihong; Wang, Le

    2017-11-01

    Viruses commonly infecting lily (Lilium spp.) include: Lily symptomless virus (LSV), Cucumber mosaic virus (CMV) and Lily mottle virus (LMoV). These viruses usually co-infect lilies causing severe economic losses in terms of quantity and quality of flower and bulb production around the world. Reliable and precise detection systems need to be developed for virus identification. We describe the development of a triplex immunocapture (IC) reverse transcription (RT) polymerase chain reaction (PCR) assay for the simultaneous detection of LSV, CMV and LMoV. The triplex IC-RT-PCR was compared with a quadruplex RT-PCR assay. Relative to the quadruplex RT-PCR, the specificity of the triplex IC-RT-PCR system for LSV, CMV and LMoV was 100% for field samples. The sensitivity of the triplex IC-RT-PCR system was 99.4%, 81.4% and 98.7% for LSV, CMV and LMoV, respectively. Agreement (κ) between the results obtained from the two tests was 0.968, 0.844 and 0.984 for LSV, CMV and LMoV, respectively. This is the first report of the simultaneous detection of LSV, CMV and LMoV in a triplex IC-RT-PCR assay. In particular we believe this convenient and reliable triplex IC-RT-PCR method could be used routinely for large-scale field surveys or crop health monitoring of lily. Copyright © 2017. Published by Elsevier B.V.

  19. Structure, electrical characteristics, and high-temperature stability of aerosol jet printed silver nanoparticle films

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, Md Taibur; McCloy, John; Panat, Rahul, E-mail: rahul.panat@wsu.edu, E-mail: rvchintalapalle@utep.edu [School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99163 (United States); Ramana, C. V., E-mail: rahul.panat@wsu.edu, E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

    2016-08-21

    Printed electronics has emerged as a versatile eco-friendly fabrication technique to create sintered nanoparticle (NP) films on arbitrary surfaces with an excellent control over the film microstructure. While applicability of such films for high-temperature applications is not explored previously, herein we report the high-temperature electrical stability of silver (Ag) metal NP films fabricated using an Aerosol Jet based printing technique and demonstrate that this behavior is dictated by changes in the film microstructure. In-situ high temperature (24–500 °C) impedance spectroscopy measurements show that the real part of the impedance increases with increasing temperature up to 150 °C, at which point a decreasing trend prevails until 300 °C, followed again by an increase in impedance. The electrical behavior is correlated with the in-situ grain growth of the Ag NP films, as observed afterwards by scanning electron microscopy and X-ray diffraction (XRD), and could be tailored by controlling the initial microstructure through sintering conditions. Using combined diffraction and spectroscopic analytical methods, it is demonstrated the Aerosol Jet printed Ag NP films exhibit enhanced thermal stability and oxidation resistance. In addition to establishing the conditions for stability of Ag NP films, the results provide a fundamental understanding of the effect of grain growth and reduction in grain boundary area on the electrical stability of sintered NP films.

  20. Structure, electrical characteristics, and high-temperature stability of aerosol jet printed silver nanoparticle films

    International Nuclear Information System (INIS)

    Rahman, Md Taibur; McCloy, John; Panat, Rahul; Ramana, C. V.

    2016-01-01

    Printed electronics has emerged as a versatile eco-friendly fabrication technique to create sintered nanoparticle (NP) films on arbitrary surfaces with an excellent control over the film microstructure. While applicability of such films for high-temperature applications is not explored previously, herein we report the high-temperature electrical stability of silver (Ag) metal NP films fabricated using an Aerosol Jet based printing technique and demonstrate that this behavior is dictated by changes in the film microstructure. In-situ high temperature (24–500 °C) impedance spectroscopy measurements show that the real part of the impedance increases with increasing temperature up to 150 °C, at which point a decreasing trend prevails until 300 °C, followed again by an increase in impedance. The electrical behavior is correlated with the in-situ grain growth of the Ag NP films, as observed afterwards by scanning electron microscopy and X-ray diffraction (XRD), and could be tailored by controlling the initial microstructure through sintering conditions. Using combined diffraction and spectroscopic analytical methods, it is demonstrated the Aerosol Jet printed Ag NP films exhibit enhanced thermal stability and oxidation resistance. In addition to establishing the conditions for stability of Ag NP films, the results provide a fundamental understanding of the effect of grain growth and reduction in grain boundary area on the electrical stability of sintered NP films.

  1. Structure, electrical characteristics, and high-temperature stability of aerosol jet printed silver nanoparticle films

    Science.gov (United States)

    Rahman, Md Taibur; McCloy, John; Ramana, C. V.; Panat, Rahul

    2016-08-01

    Printed electronics has emerged as a versatile eco-friendly fabrication technique to create sintered nanoparticle (NP) films on arbitrary surfaces with an excellent control over the film microstructure. While applicability of such films for high-temperature applications is not explored previously, herein we report the high-temperature electrical stability of silver (Ag) metal NP films fabricated using an Aerosol Jet based printing technique and demonstrate that this behavior is dictated by changes in the film microstructure. In-situ high temperature (24-500 °C) impedance spectroscopy measurements show that the real part of the impedance increases with increasing temperature up to 150 °C, at which point a decreasing trend prevails until 300 °C, followed again by an increase in impedance. The electrical behavior is correlated with the in-situ grain growth of the Ag NP films, as observed afterwards by scanning electron microscopy and X-ray diffraction (XRD), and could be tailored by controlling the initial microstructure through sintering conditions. Using combined diffraction and spectroscopic analytical methods, it is demonstrated the Aerosol Jet printed Ag NP films exhibit enhanced thermal stability and oxidation resistance. In addition to establishing the conditions for stability of Ag NP films, the results provide a fundamental understanding of the effect of grain growth and reduction in grain boundary area on the electrical stability of sintered NP films.

  2. SN 2017dio: A Type-Ic Supernova Exploding in a Hydrogen-rich Circumstellar Medium

    Science.gov (United States)

    Kuncarayakti, Hanindyo; Maeda, Keiichi; Ashall, Christopher J.; Prentice, Simon J.; Mattila, Seppo; Kankare, Erkki; Fransson, Claes; Lundqvist, Peter; Pastorello, Andrea; Leloudas, Giorgos; Anderson, Joseph P.; Benetti, Stefano; Bersten, Melina C.; Cappellaro, Enrico; Cartier, Régis; Denneau, Larry; Della Valle, Massimo; Elias-Rosa, Nancy; Folatelli, Gastón; Fraser, Morgan; Galbany, Lluís; Gall, Christa; Gal-Yam, Avishay; Gutiérrez, Claudia P.; Hamanowicz, Aleksandra; Heinze, Ari; Inserra, Cosimo; Kangas, Tuomas; Mazzali, Paolo; Melandri, Andrea; Pignata, Giuliano; Rest, Armin; Reynolds, Thomas; Roy, Rupak; Smartt, Stephen J.; Smith, Ken W.; Sollerman, Jesper; Somero, Auni; Stalder, Brian; Stritzinger, Maximilian; Taddia, Francesco; Tomasella, Lina; Tonry, John; Weiland, Henry; Young, David R.

    2018-02-01

    SN 2017dio shows both spectral characteristics of a type-Ic supernova (SN) and signs of a hydrogen-rich circumstellar medium (CSM). Prominent, narrow emission lines of H and He are superposed on the continuum. Subsequent evolution revealed that the SN ejecta are interacting with the CSM. The initial SN Ic identification was confirmed by removing the CSM interaction component from the spectrum and comparing with known SNe Ic and, reversely, adding a CSM interaction component to the spectra of known SNe Ic and comparing them to SN 2017dio. Excellent agreement was obtained with both procedures, reinforcing the SN Ic classification. The light curve constrains the pre-interaction SN Ic peak absolute magnitude to be around {M}g=-17.6 mag. No evidence of significant extinction is found, ruling out a brighter luminosity required by an SN Ia classification. These pieces of evidence support the view that SN 2017dio is an SN Ic, and therefore the first firm case of an SN Ic with signatures of hydrogen-rich CSM in the early spectrum. The CSM is unlikely to have been shaped by steady-state stellar winds. The mass loss of the progenitor star must have been intense, \\dot{M}∼ 0.02{({ε }{{H}α }/0.01)}-1 ({v}{wind}/500 km s‑1) ({v}{shock}/10,000 km s‑1)‑3 M ⊙ yr‑1, peaking at a few decades before the SN. Such a high mass-loss rate might have been experienced by the progenitor through eruptions or binary stripping. Based on observations made with the NOT, operated by the Nordic Optical Telescope Scientific Association at the Observatorio del Roque de los Muchachos, La Palma, Spain, of the Instituto de Astrofisica de Canarias. This work is based (in part) on observations collected at the European Organisation for Astronomical Research in the Southern Hemisphere, Chile as part of PESSTO, (the Public ESO Spectroscopic Survey for Transient Objects Survey) ESO program 188.D-3003, 191.D-0935, 197.D-1075. Based on observations made with the Liverpool Telescope operated on the

  3. High-mobility pyrene-based semiconductor for organic thin-film transistors.

    Science.gov (United States)

    Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

    2013-05-01

    Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

  4. DISCOVERY OF THE BROAD-LINED TYPE Ic SN 2013cq ASSOCIATED WITH THE VERY ENERGETIC GRB 130427A

    Energy Technology Data Exchange (ETDEWEB)

    Xu, D.; Krühler, T.; Hjorth, J.; Malesani, D.; Fynbo, J. P. U.; Watson, D. J.; Geier, S. [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Maries Vej 30, DK-2100 København Ø (Denmark); De Ugarte Postigo, A.; Thöne, C. C.; Sánchez-Ramírez, R. [Instituto de Astrofísica de Andalucía, CSIC, Glorieta de la Astronomía s/n, E-18008 Granada (Spain); Leloudas, G. [The Oskar Klein Centre, Department of Physics, Stockholm University, AlbaNova, SE-10691 Stockholm (Sweden); Cano, Z.; Jakobsson, P. [Centre for Astrophysics and Cosmology, Science Institute, University of Iceland, Dunhagi 5, IS-107 Reykjavik (Iceland); Schulze, S. [Departamento de Astronomía y Astrofísica, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 22 (Chile); Kaper, L. [Astronomical Institute Anton Pannekoek, University of Amsterdam, Science Park 904, NL-1098 XH Amsterdam (Netherlands); Sollerman, J. [The Oskar Klein Centre, Department of Astronomy, Stockholm University, AlbaNova, SE-10691 Stockholm (Sweden); Cabrera-Lavers, A. [Instituto de Astrofísica de Canarias, E-38205 La Laguna, Tenerife (Spain); Cao, C. [Department of Space Science and Physics, Shandong University at Weihai, Weihai, Shandong 264209 (China); Covino, S. [INAF/Brera Astronomical Observatory, via Bianchi 46, I-23807 Merate (Italy); Flores, H., E-mail: dong@dark-cosmology.dk [Laboratoire Galaxies Etoiles Physique et Instrumentation, Observatoire de Paris, 5 place Jules Janssen, F-92195 Meudon (France); and others

    2013-10-20

    Long-duration gamma-ray bursts (GRBs) at z < 1 are found in most cases to be accompanied by bright, broad-lined Type Ic supernovae (SNe Ic-BL). The highest-energy GRBs are mostly located at higher redshifts, where the associated SNe are hard to detect observationally. Here, we present early and late observations of the optical counterpart of the very energetic GRB 130427A. Despite its moderate redshift, z = 0.3399 ± 0.0002, GRB 130427A is at the high end of the GRB energy distribution, with an isotropic-equivalent energy release of E{sub iso} ∼ 9.6 × 10{sup 53} erg, more than an order of magnitude more energetic than other GRBs with spectroscopically confirmed SNe. In our dense photometric monitoring, we detect excess flux in the host-subtracted r-band light curve, consistent with that expected from an emerging SN, ∼0.2 mag fainter than the prototypical SN 1998bw. A spectrum obtained around the time of the SN peak (16.7 days after the GRB) reveals broad undulations typical of SNe Ic-BL, confirming the presence of an SN, designated SN 2013cq. The spectral shape and early peak time are similar to those of the high expansion velocity SN 2010bh associated with GRB 100316D. Our findings demonstrate that high-energy, long-duration GRBs, commonly detected at high redshift, can also be associated with SNe Ic-BL, pointing to a common progenitor mechanism.

  5. Highly anisotropic optoelectronic properties of aligned films of self-assembled platinum molecular wires

    NARCIS (Netherlands)

    Debije, M.G.; Haas, de M.P.; Savenije, T.J.; Warman, J.M.; Fontana, M.; Stutzmann, N.; Caseri, W.R.; Smith, P.

    2003-01-01

    Self-assembled columns of alternating tetrachloro- and tetraalkylaminoplatinum moieties form stable, highly oriented, optically anisotropic films on a friction-deposited polytetrafluoroethylene surface (see Figure). Charge transport in the films is rapid (mobility =¿ca. 10–2 cm2¿V–1¿s–1) and highly

  6. Generic test platform for representative tests of safety I/C systems - 15546

    International Nuclear Information System (INIS)

    Fourestie, B.; Kuck, H.; Richter, J.; Rieche, S.; Waitz, M.

    2015-01-01

    In compliance with the IEC 61513 safety Instrumentation and Control (I/C) systems must be successfully validated in their final configuration prior to installation on site and commissioning. However the contingent need for modifications during system validation activities or subsequently during the commissioning phase may entail long and costly re-engineering of the I/C systems. With the view to ease these possible modifications, a Generic Test Platform has been developed by AREVA which allows combining a real I/C system subpart with an emulation server. This platform provides a faithful representation of the I/C System allowing crediting the validation test results carried out on this platform. (authors)

  7. Damage thresholds of thin film materials and high reflectors at 248 nm

    International Nuclear Information System (INIS)

    Rainer, F.; Lowdermilk, W.H.; Milam, D.; Carniglia, C.K.; Hart, T.T.; Lichtenstein, T.L.

    1982-01-01

    Twenty-ns, 248-nm KrF laser pulses were used to measure laser damage thresholds for halfwave-thick layers of 15 oxide and fluoride coating materials, and for high reflectance coatings made with 13 combinations of these materials. The damage thresholds of the reflectors and single-layer films were compared to measurements of several properties of the halfwave-thick films to determine whether measurements of these properties of single-layer films to determine whether measurements of these properties of single-layer films were useful for identifying materials for fabrication of damage resistant coatings

  8. High-reflective colorful films fabricated by all-solid multi-layer cholesteric structures

    Science.gov (United States)

    Li, Y.; Luo, D.

    2018-02-01

    We demonstrate all-solid-state film with high-reflectivity based on cholesteric template. The adhesive (NOA81) is both filler and an adhesive, which can be avoids interfacial losses. The reflected right- and left-circularly polarized light has been developed by roll-to-roll method, and the reflectance of the films is more than 78%. Here, the all-solid film was used in distribute feedback laser with dye-doped. In addition, this films also used in include flexible reflective display, color pixels in digital photographs, printing and colored cladding of variety of objects.

  9. A high PSRR Class-D audio amplifier IC based on a self-adjusting voltage reference

    OpenAIRE

    Huffenus , Alexandre; Pillonnet , Gaël; Abouchi , Nacer; Goutti , Frédéric; Rabary , Vincent; Cittadini , Robert

    2010-01-01

    International audience; In a wide range of applications, audio amplifiers require a large Power Supply Rejection Ratio (PSRR) that the current Class-D architecture cannot reach. This paper proposes a self-adjusting internal voltage reference scheme that sets the bias voltages of the amplifier without losing on output dynamics. This solution relaxes the constraints on gain and feedback resistors matching that were previously the limiting factor for the PSRR. Theory of operation, design and IC ...

  10. Improving IC process efficiency with critical materials management

    Science.gov (United States)

    Hanson, Kathy L.; Andrews, Robert E.

    2003-06-01

    The management of critical materials in a high technology manufacturing facility is crucial to obtaining consistently high production yield. This is especially true in an industry like semiconductors where the success of the product is so dependent on the integrity of the critical production materials. Bar code systems, the traditional management tools, are voluntary, defeatable, and do not continuously monitor materials when in use. The significant costs associated with mis-management of chemicals can be captured with a customized model resulting in highly favorable ROI"s for the NOWTrak RFID chemical management system. This system transmits reliable chemical data about each individual container and generates information that can be used to increase wafer production efficiency and yield. The future of the RFID system will expand beyond the benefits of chemical management and into dynamic IC process management

  11. Fabrication of high-performance fluorine doped-tin oxide film using flame-assisted spray deposition

    Energy Technology Data Exchange (ETDEWEB)

    Purwanto, Agus, E-mail: Aguspur@uns.ac.id [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia); Widiyandari, Hendri [Department of Physics, Faculty of Mathematics and Natural Sciences, Diponegoro University, Jl. Prof. Dr. Soedarto, Tembalang, Semarang 50275 (Indonesia); Jumari, Arif [Department of Chemical Engineering, Faculty of Engineering, Sebelas Maret University, Jl. Ir. Sutami 36 A, Surakarta, Central Java 57126 (Indonesia)

    2012-01-01

    A high-performance fluorine-doped tin oxide (FTO) film was fabricated by flame-assisted spray deposition method. By varying the NH{sub 4}F doping concentration, the optimal concentration was established as 8 at.%. X-ray diffractograms confirmed that the as-grown FTO film was tetragonal SnO{sub 2}. In addition, the FTO film was comprised of nano-sized grains ranging from 40 to 50 nm. The heat-treated FTO film exhibited a sheet resistance of 21.8 {Omega}/{open_square} with an average transmittance of 81.9% in the visible region ({lambda} = 400-800 nm). The figures of merit shows that the prepared FTO film can be used for highly efficient dye-sensitized solar cells electrodes.

  12. AGB stars as tracers to IC 1613 evolution.

    Science.gov (United States)

    Hashemi, S. A.; Javadi, A.; van Loon, J. Th.

    We are going to apply AGB stars to find star formation history for IC 1613 galaxy; this a new and simple method that works well for nearby galaxies. IC 1613 is a Local Group dwarf irregular galaxy that is located at distance of 750 kpc, a gas rich and isolated dwarf galaxy that has a low foreground extinction. We use the long period variable stars (LPVs) that represent the very final stage of evolution of stars with low and intermediate mass at the AGB phase and are very luminous and cool so that they emit maximum brightness in near-infrared bands. Thus near-infrared photometry with using stellar evolutionary models help us to convert brightness to birth mass and age and from this drive star formation history of the galaxy. We will use the luminosity distribution of the LPVs to reconstruct the star formation history-a method we have successfully applied in other Local Group galaxies. Our analysis shows that the IC 1613 has had a nearly constant star formation rate, without any dominant star formation episode.

  13. Degradation testing and failure analysis of DC film capacitors under high humidity conditions

    DEFF Research Database (Denmark)

    Wang, Huai; Nielsen, Dennis Achton; Blaabjerg, Frede

    2015-01-01

    Metallized polypropylene film capacitors are widely used for high-voltage DC-link applications in power electronic converters. They generally have better reliability performance compared to aluminum electrolytic capacitors under electro-thermal stresses within specifications. However......, the degradation of the film capacitors is a concern in applications exposed to high humidity environments. This paper investigates the degradation of a type of plastic-boxed metallized DC film capacitors under different humidity conditions based on a total of 8700 h of accelerated testing and also post failure...... of interest is also presented. The study enables a better understanding of the humidity-related failure mechanisms and reliability performance of DC film capacitors for power electronics applications....

  14. Development of stripper films made of high strength, long life carbon nitride

    International Nuclear Information System (INIS)

    Oyaizu, Mitsuhiro; Sugai, Isamu; Yoshida, Koji; Haruyama, Yoichi.

    1994-01-01

    The heavy ion accelerators such as tandem type van de Graaff, linear accelerators, cyclotrons and so on raise the acceleration efficiency usually by producing multivalent ions by making the charge conversion of heavy ions using carbon thin films. However, when the electrons of large atomic number ions of low energy, high intensity current are stripped, the conventional carbon thin films on the market or home made were very short in their life, and have become the cause of remarkably lowering the acceleration efficiency. The concrete objectives of the development are the use of the charge conversion of unstable nuclear ions in the E arena accelerator for JHP of the future project of Institute of Nuclear Study and the manufacture of the carbon films which are used for the charge conversion of the H beam of high energy, but at the time of exchanging the films, there is the problem of the radiation exposure of large amount, therefore, the development of high reliability, long life stripper films has been strongly demanded. The experiment was carried out by controlled carbon arc discharge process using both AC and DC and the ion beam sputtering process using reactive nitrogen gas. The results are reported. (K.I.)

  15. Noise suppression and crosstalk analysis of on-chip magnetic film-type noise suppressor

    Science.gov (United States)

    Ma, Jingyan; Muroga, Sho; Endo, Yasushi; Hashi, Shuichiro; Naoe, Masayuki; Yokoyama, Hiroo; Hayashi, Yoshiaki; Ishiyama, Kazushi

    2018-05-01

    This paper discusses near field, conduction and crosstalk noise suppression of magnetic films with uniaxial anisotropy on transmission lines for a film-type noise suppressor in the GHz frequency range. The electromagnetic noise suppressions of magnetic films with different permeability and resistivity were measured and simulated with simple microstrip lines. The experimental and simulated results of Co-Zr-Nb and CoPd-CaF2 films agreed with each other. The results indicate that the higher permeability leads to a better near field shielding, and in the frequency range of 2-7 GHz, a higher conduction noise suppression. It also suggests that the higher resistivity results in a better crosstalk suppression in the frequency range below 2 GHz. These results can support the design guidelines of the magnetic film-type noise suppressor used in the next generation IC chip.

  16. A highly selective and wide range ammonia sensor—Nanostructured ZnO:Co thin film

    International Nuclear Information System (INIS)

    Mani, Ganesh Kumar; Rayappan, John Bosco Balaguru

    2015-01-01

    Graphical abstract: - Highlights: • Cobalt doped nanostructured ZnO thin films were spray deposited on glass substrates. • Co-doped ZnO film was highly selective towards ammonia than ethanol, methanol, etc. • The range of ammonia detection was improved significantly by doping cobalt in ZnO. - Abstract: Ammonia sensing characteristics of undoped and cobalt (Co)-doped nanostructured ZnO thin films were investigated. Polycrystalline nature with hexagonal wurtzite structure and high crystalline quality with dominant (0 0 2) plane orientation of Co-doped ZnO film were confirmed by the X-ray diffractogram. Scanning electron micrographs of the undoped film demonstrated the uniform deposition of sphere-shaped grains. But, smaller particles with no clear grain boundaries were observed for Co-doped ZnO thin film. Band gap values were found to be 3.26 eV and 3.22 eV for undoped and Co-doped ZnO thin films. Ammonia sensing characteristics of Co-doped ZnO film at room temperature were investigated in the concentration range of 15–1000 ppm. Variation in the sensing performances of Co-doped and pure ZnO thin films has been analyzed and compared

  17. Crystalline and amorphous phases in carbon nitride films produced by intense high-pressure plasma

    International Nuclear Information System (INIS)

    Gurarie, V.N.; Orlov, A.V.; Bursill, L.A.; JuLin, P.; Nugent, K.W.; Chon, J.W.; Prawer, S.

    1997-01-01

    Carbon-nitride films are prepared using a high-intensity pulsed plasma deposition technique. A wide range of nitrogen pressure and discharge intensity are used to investigate their effect on the morphology, nitrogen content, structure, bonding, phase composition and mechanical characteristics of the CN films deposited. Increasing the nitrogen pressure from 0.1 atm to 10 atm results in an increase of nitrogen incorporation into CN films to maximum of 45 at %. Under the high-energy density deposition conditions which involve ablation of the quartz substrate the CN films are found to incorporate in excess of 60 at %N. Raman spectra of these films contain sharp peaks characteristic of a distinct crystalline CN phase. TEM diffraction patterns for the films deposited below 1 atm unambiguously show the presence of micron-sized crystals displaying a cubic symmetry. (authors)

  18. Clinical efficacy and safety of ICS/LABA in patients with combined idiopathic pulmonary fibrosis and emphysema.

    Science.gov (United States)

    Dong, Fushi; Zhang, Yimei; Chi, Fangzhou; Song, Qi; Zhang, Lijuan; Wang, Yupeng; Che, Chunli

    2015-01-01

    The study aim was to explore the clinical efficacy and safety of inhaled corticosteroids (ICS)/long-acting beta2-agonists (LABA) in combined with idiopathic pulmonary fibrosis and emphysema. 45 patients with combined idiopathic pulmonary fibrosis and emphysema (CPFE) who were treated with ICS/LABA (Group A), 24 patients with CPFE who were treated without ICS/LABA (Group B) and 35 patients with idiopathic pulmonary fibrosis (IPF) (Group C) were enrolled into this study. Then, clinical efficacy and safety of ICS/LABA was analyzed through lung function scores and lung high-resolution computed tomography (HRCT) scans. Compared with baseline levels, the FEV1%, FVC% and DLCO% levels were increased 11.2%, 13.53% and 12.8% respectively in group A, but declined 14.21%, 16.8% and 21.25% respectively in group B, meanwhile, lung HRCT score was declined 9.31 in group A but increased 14.87 in group B, and there was significant difference between group A and group B (P0.05). The incidence of adverse reaction was higher in group A than that in group B during this study, but there was no significant difference (P>0.05). ICS/LABA therapy could improve lung function condition in patients with CPFE and declined acute out-break frequency and severity of diseases during acute episode period.

  19. Alkyl chitosan film-high strength, functional biomaterials.

    Science.gov (United States)

    Lu, Li; Xing, Cao; Xin, Shen; Shitao, Yu; Feng, Su; Shiwei, Liu; Fusheng, Liu; Congxia, Xie

    2017-11-01

    Biofilm with strong tensile strength is a topic item in the area of tissue engineering, medicine engineering, and so forth. Here we introduced an alkyl chitosan film with strong tensile strength and its possibility for an absorbable anticoagulation material in vivo was tested in the series of blood test, such as dynamic coagulation time, plasma recalcification time and hemolysis. Alkyl chitosan film was a better biomaterial than traditional chitosan film in the anticoagulation, tissue compatibility and cell compatibility. The unique trait of alkyl chitosan film may be for its greater contact angle and hydrophobicity ability to reduce the adsorption capacity for the blood component and the activity of fibrinolytic enzymes, enhance the antibacterial capacity than chitosan film. Moreover, none of chitosan film or butyl chitosan film exhibited quick inflammation or other disadvantage and degraded quickly by implanted test. Therefore, Alkyl chitosan film is of prospective properties as an implantable, absorbable agent for tissue heals, and this material need further research. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 105A: 3034-3041, 2017. © 2017 Wiley Periodicals, Inc.

  20. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    International Nuclear Information System (INIS)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook

    2017-01-01

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  1. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook, E-mail: cwjeon@ynu.ac.kr

    2017-04-30

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  2. Prediction of fracture toughness K/sub Ic/ of steel from Charpy impact test results

    Energy Technology Data Exchange (ETDEWEB)

    Iwadate, Tadao; Tanaka, Yasuhiko; Takemata, Hiroyuki; Terashima, Shuhei

    1986-08-01

    This paper presents a method to predict the fracture toughness K/sub Ic/ and/or K/sub Id/ of steels using their Charpy impact test results and tensile properties. The fracture toughness, Charpy impact and tensile properties of 2 1/4 Cr-1Mo, ASTM A508 Cl.1, A508 Cl.2 A508 Cl.3 and A533 Gr.B Cl.1 steels were measured and analysed on the basis of the excess temperature (test temperature minus FATT) and Rolfe-Novak correlation. The relationship between K/sub Ic//K/sub Ic-us/ and the excess temperature, where K/sub Ic-us/ is the upper-shelf fracture toughness K/sub Ic/ predicted by Rolfe-Novak correlation, discloses that the K/sub Ic/ transition curves of several steels are representable by only one trend curve of K/sub Ic//K/sub Ic-us/ or K/sub Id//K/sub Id-us/ versus excess temperature relation. This curve is denoted as a ''master curve''. By using this curve, the fracture toughness of steel can be predicted using Charpy impact and tensile test results. By taking account of the scattering of both the fracture toughness and Charpy impact test results, the confidence limits of the master curve were also determined. Another approach to develop more general procedure of predicting the fracture toughness K/sub Ic/ is also discussed.

  3. Industry-Oriented Laboratory Development for Mixed-Signal IC Test Education

    Science.gov (United States)

    Hu, J.; Haffner, M.; Yoder, S.; Scott, M.; Reehal, G.; Ismail, M.

    2010-01-01

    The semiconductor industry is lacking qualified integrated circuit (IC) test engineers to serve in the field of mixed-signal electronics. The absence of mixed-signal IC test education at the collegiate level is cited as one of the main sources for this problem. In response to this situation, the Department of Electrical and Computer Engineering at…

  4. 30 CFR 57.22241 - Advance face boreholes (I-C mines).

    Science.gov (United States)

    2010-07-01

    ...) Boreholes shall be drilled in such a manner to insure that the advancing face will not accidently break into... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Advance face boreholes (I-C mines). 57.22241... Standards for Methane in Metal and Nonmetal Mines Ventilation § 57.22241 Advance face boreholes (I-C mines...

  5. High Refractive Organic–Inorganic Hybrid Films Prepared by Low Water Sol-Gel and UV-Irradiation Processes

    Directory of Open Access Journals (Sweden)

    Hsiao-Yuan Ma

    2016-03-01

    Full Text Available Organic-inorganic hybrid sols (Ti–O–Si precursor were first synthesized by the sol-gel method at low addition of water, and were then employed to prepare a highly refractive hybrid optical film. This film was obtained by blending the Ti–O–Si precursor with 2-phenylphenoxyethyl acrylate (OPPEA to perform photo-polymerization by ultraviolet (UV irradiation. Results show that the film transparency of poly(Ti–O–Si precursor-co-OPPEA film is higher than that of a pure poly(Ti–O–Si precursor film, and that this poly(Ti–O–Si precursor-co-OPPEA hybrid film exhibits a high transparency of ~93.7% coupled with a high refractive index (n of 1.83 corresponding to a thickness of 2.59 μm.

  6. An experimental study of high heat flux removal by shear-driven liquid films

    Directory of Open Access Journals (Sweden)

    Zaitsev Dmitry

    2017-01-01

    Full Text Available Intensively evaporating liquid films, moving under the friction of a co-current gas flow in a mini-channel (shear-driven liquid films, are promising for the use in cooling systems of modern semiconductor devices with high local heat release. In this work, the effect of various parameters, such as the liquid and gas flow rates and channel height, on the critical heat flux in the locally heated shear-driven water film has been studied. A record value of the critical heat flux of 1200 W/cm2 has been achieved in experiments. Heat leaks to the substrate and heat losses to the atmosphere in total do not exceed 25% for the heat flux above 400 W/cm2. Comparison of the critical heat fluxes for the shear-driven liquid film and for flow boiling in a minichannel shows that the critical heat flux is an order of magnitude higher for the shear-driven liquid film. This confirms the prospect of using shear-driven liquid films in the modern high-efficient cooling systems.

  7. Study of the Radiochromic Film for High Dose Measurement in Radiation Processing

    Directory of Open Access Journals (Sweden)

    CHEN Yi-zhen

    2016-02-01

    Full Text Available To establish the radiochromic film dosimeter for high dose level measurement during radiation processing, By corresponding formula and its preparation process research, batches of radiochromic film dosimeters were prepared using nylon as substrate and pararosaniline cyanide as dye. In Co-60 gamma reference radiation field, dosimetry response performance of radiochromic film was studied and results showed that the repeatability was good to 1.0%. The response curves demonstrated good linearity in the dose range of 5-210 kGy, and the signal of radiochromic film dosimeters after irradiation under the condition of low temperature storage within 2 weeks was stable. In addition, the radiochromic film dosimeters were not found to have noticeable dose rate dependence in the range of this experiment. In the linear dose range, radiochromic film dosimeter measures the absorbed dose, with extended uncertainty 4.2% (k=2 for Co-60 gamma rays. The film was suitable as dosimeters for the parameters measurement of the electron beam on the accelerator.

  8. PDC IC WELD FAILURE EVALUATION AND RESOLUTION

    Energy Technology Data Exchange (ETDEWEB)

    Korinko, P.; Howard, S.; Maxwell, D.; Fiscus, J.

    2012-04-16

    During final preparations for start of the PDCF Inner Can (IC) qualification effort, welding was performed on an automated weld system known as the PICN. During the initial weld, using a pedigree canister and plug, a weld defect was observed. The defect resulted in a hole in the sidewall of the canister, and it was observed that the plug sidewall had not been consumed. This was a new type of failure not seen during development and production of legacy Bagless Transfer Cans (FB-Line/Hanford). Therefore, a team was assembled to determine the root cause and to determine if the process could be improved. After several brain storming sessions (MS and T, R and D Engineering, PDC Project), an evaluation matrix was established to direct this effort. The matrix identified numerous activities that could be taken and then prioritized those activities. This effort was limited by both time and resources (the number of canisters and plugs available for testing was limited). A discovery process was initiated to evaluate the Vendor's IC fabrication process relative to legacy processes. There were no significant findings, however, some information regarding forging/anneal processes could not be obtained. Evaluations were conducted to compare mechanical properties of the PDC canisters relative to the legacy canisters. Some differences were identified, but mechanical properties were determined to be consistent with legacy materials. A number of process changes were also evaluated. A heat treatment procedure was established that could reduce the magnetic characteristics to levels similar to the legacy materials. An in-situ arc annealing process was developed that resulted in improved weld characteristics for test articles. Also several tack welds configurations were addressed, it was found that increasing the number of tack welds (and changing the sequence) resulted in decreased can to plug gaps and a more stable weld for test articles. Incorporating all of the process

  9. Low energy ion implantation and high energy heavy ion irradiation in C60 films

    International Nuclear Information System (INIS)

    Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

    2001-01-01

    C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

  10. High-dose-rate intracavitary brachytherapy (HDR-IC) in treatment of cervical carcinoma: 5-year results and implication of increased low-grade rectal complication on initiation of an HDR-IC fractionation scheme

    International Nuclear Information System (INIS)

    Wang Chongjong; Wan Leung, Stephen; Chen Huichun; Sun Limin; Fang Fumin; Changchien Chanchao; Huang Engyen; Wu Jiaming; Chen Chuhnchih

    1997-01-01

    Purpose: To report the treatment results and rectal/bladder complications of cervical carcinoma radically treated with high-dose-rate intracavitary brachytherapy (HDR-IC). The current policy of using three-fraction scheme was examined. Methods and Materials: Between November 1987 and August 1990, 173 patients with cervical carcinoma were treated with curative-intent radiation therapy. Whole pelvic irradiation was administered with 10-MV X ray. Dose to the central cervix was 40-44 Gy in 20-22 fractions, following by pelvic wall boost 6-14 Gy in three to seven fractions with central shielding. 60 Co sources were used for HDR-IC, and 7.2 Gy was given to Point A for three applications, 1-2 weeks apart. Duration of follow-up was 5-7.8 years. Results: Twenty-eight patients (16%) developed central-regional recurrences. Overall 5-year actuarial pelvic control rate was 83%. By stage, 5-year actuarial pelvic control rates were 94%, 87%, and 72% for Stages IB + IIA, IIB + IIIA, and IIIB + IVA, respectively. Thirty-one patients (18%) developed distant metastasis. Overall 5-year actuarial survival rate was 58%. By stage, 5-year actuarial survival rates were 79%, 59%, and 41% for Stages IB + IIA, IIB + IIIA, and IIIB + IVA, respectively. Sixty-six (38%) and 19 patients (11%) developed rectal and bladder complications, respectively. For rectal complication, the overall actuarial rate was 38% at 5 years. By grade, 5-year actuarial rectal complication rates were 24%, 15%, 4%, and 3% for Grades 1-4, respectively. Overall prevalence of rectal complications was 37% and 14% at 2 and 5 years, respectively. Prevalence of low-grade rectal complication (Grades 1 and 2) was dominant at 2 years (30%), but declined to 8% at 5 years. Prevalence of high-grade, severe rectal complication (Grades 3 and 4) remained steady at 2 and 5 years (7% and 6%, respectively). Five-year actuarial bladder complication was 9%. Five-year prevalence of bladder complication was 2%. Conclusion: Using a three

  11. PENGARUH MEKANISME CORPORATE GOVERNANCE TERHADAP PENGUNGKAPAN INTELLECTUAL CAPITAL: PADA PERUSAHAAN IC INTENSIVE

    Directory of Open Access Journals (Sweden)

    Dista Amalia Arifah

    2012-12-01

    Full Text Available Intangible asset proxied by Intellectual Capital has important role to drive companies values creation. Although many companies have applied corporate governance mechanism in order to have IC disclosure recognition, most of them do not focus on Intellectual Capital disclosure yet. The aim of this study is to analyze the influence of corporate governance mechanisms consisting of size of the board commissioners, the independence level of independent commissioner, the activities of independent commissioners, and audit committee on the intellectual capital disclosures of the companies listed in BEI in 2009 using intensive ICs category with the adding of kontrol variables. This study will provide an illustration on how the mechanisms of corporate governance practices and IC disclosure become a value creation source for the company. There are a total of 176 companies categorized as IC intensive. Using a purposive sampling method, 45 companies were selected as samples. The 2009 annual reports of the companies are used as secondary data source of this research. Furthermore, to get ICs disclosure data content analysis technique was used both for quantity and quality terms. The results indicate that audit committee is the only corporate governance mechanism that significantly affects the level of IC disclosures.

  12. High index glass thin film processing for photonics and photovoltaic (PV) applications

    Science.gov (United States)

    Ogbuu, Okechukwu Anthony

    To favorably compete with fossil-fuel technology, the greatest challenge for thin film solar-cells is to improve efficiency and reduce material cost. Thickness scaling to thin film reduces material cost but affects the light absorption in the cells; therefore a concept that traps incident photons and increases its optical path length is needed to boost absorption in thin film solar cells. One approach is the integration of low symmetric gratings (LSG), using high index material, on either the front-side or backside of 30 um thin c-Si cells. In this study, Multicomponent TeO2--Bi2O 3--ZnO (TBZ) glass thin films were prepared using RF magnetron sputtering under different oxygen flow rates. The influences of oxygen flow rate on the structural and optical properties of the resulting thin films were investigated. The structural origin of the optical property variation was studied using X-ray diffraction, X-ray photoelectron spectroscopy, Raman Spectroscopy, and transmission electron microscopy. The results indicate that TBZ glass thin film is a suitable material for front side LSG material photovoltaic and photonics applications due to their amorphous nature, high refractive index (n > 2), broad band optical transparency window, low processing temperature. We developed a simple maskless method to pattern sputtered tellurite based glass thin films using unconventional agarose hydrogel mediated wet etching. Conventional wet etching process, while claiming low cost and high throughput, suffers from reproducibility and pattern fidelity issues due to the isotropic nature of wet chemical etching when applied to glasses and polymers. This method overcomes these challenges by using an agarose hydrogel stamp to mediate a conformal etching process. In our maskless method, agarose hydrogel stamps are patterned following a standard soft lithography and replica molding process from micropatterned masters and soaked in a chemical etchant. The micro-scale features on the stamp are

  13. Fabrication of highly crystalline oxide thin films on plastics: Sol–gel transfer technique involving high temperature process

    Directory of Open Access Journals (Sweden)

    Hiromitsu Kozuka

    2016-09-01

    Full Text Available Si(100 substrates were coated with a polyimide (PI–polyvinylpyrrolidone (PVP mixture film, and an alkoxide-derived TiO2 gel film was deposited on it by spin-coating. The gel films were fired under various conditions with final annealing at 600–1000 °C. The PI–PVP layer was completely decomposed at such high temperatures while the TiO2 films survived on Si(100 substrates without any damages. When the final annealing temperature was raised, the crystalline phase changed from anatase to rutile, and the crystallite size and the refractive index of the films tended to increase. The TiO2 films thus fired on Si(100 substrates were transferred to polycarbonate (PC substrates by melting the surface of the plastic substrate either in a near-infrared image furnace or on a hot plate under a load. Cycles of deposition and firing were found to be effective in achieving successful transfer even for the films finally annealed at 1000 °C. X-ray photoelectron spectroscopic analyses on the film/Si(100 interface suggested that the residual carbon or carbides at the interface could be a possible factor, but not a necessary and decisive factor that allows the film transfer.

  14. Dielectric and acoustical high frequency characterisation of PZT thin films

    International Nuclear Information System (INIS)

    Conde, Janine; Muralt, Paul

    2010-01-01

    Pb(Zr, Ti)O 3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  15. Dielectric and acoustical high frequency characterisation of PZT thin films

    Science.gov (United States)

    Conde, Janine; Muralt, Paul

    2010-02-01

    Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  16. Study of PECVD films containing flourine and carbon and diamond like carbon films for ultra low dielectric constant interlayer dielectric applications

    Science.gov (United States)

    Sundaram, Nandini Ganapathy

    Lowering the capacitance of Back-end-of-line (BEOL) structures by decreasing the dielectric permittivity of the interlayer dielectric material in integrated circuits (ICs) lowers device delay times, power consumption and parasitic capacitance. a:C-F films that are thermally stable at 400°C were deposited using tetrafluorocarbon and disilane (5% by volume in Helium) as precursors. The bulk dielectric constant (k) of the film was optimized from 2.0 / 2.2 to 1.8 / 1.91 as-deposited and after heat treatment. Films, with highly promising k-values but discarded for failing to meet shrinkage rate requirements were salvaged by utilizing a novel extended heat treatment scheme. Film properties including chemical bond structure, F/C ratio, refractive index, surface planarity, contact angle, dielectric constant, flatband voltage shift, breakdown field potential and optical energy gap were evaluated by varying process pressure, power, substrate temperature and flow rate ratio (FRR) of processing gases. Both XPS and FTIR results confirmed that the stoichiometry of the ultra-low k (ULK) film is close to that of CF2 with no oxygen. C-V characteristics indicated the presence of negative charges that are either interface trapped charges or bulk charges. Average breakdown field strength was in the range of 2-8 MV/cm while optical energy gap varied between 2.2 eV and 3.4 eV. Irradiation or plasma damage significantly impacts the ability to integrate the film in VSLI circuits. The film was evaluated after exposure to oxygen plasma and HMDS vapors and no change in the FTIR spectra or refractive index was observed. Film is resistant to attack by developers CD 26 and KOH. While the film dissolves in UVN-30 negative resist, it is impermeable to PGDMA. A 12% increase in dielectric constant and a decrease in contact angle from 65° to 47° was observed post e-beam exposure. The modified Gaseous Electronics Conference (mGEC) reference cell was used to deposit DLC films using CH4 and Argon as

  17. Dead-time free pixel readout architecture for ATLAS front-end IC

    CERN Document Server

    Einsweiler, Kevin F; Kleinfelder, S A; Luo, L; Marchesini, R; Milgrome, O; Pengg, F X

    1999-01-01

    A low power sparse scan readout architecture has been developed for the ATLAS pixel front-end IC. The architecture supports a dual discriminator and extracts the time over threshold (TOT) information along with a 2-D spatial address $9 of the hits associating them with a unique 7-bit beam crossing number. The IC implements level-1 trigger filtering along with event building (grouping together all hits in a beam crossing) in the end of column (EOC) buffer. The $9 events are transmitted over a 40 MHz serial data link with the protocol supporting buffer overflow handling by appending error flags to events. This mixed-mode full custom IC is implemented in 0.8 mu HP process to meet the $9 requirements for the pixel readout in the ATLAS inner detector. The circuits have been tested and the IC provides dead-time-less ambiguity free readout at 40 MHz data rate.

  18. System reduction for nanoscale IC design

    CERN Document Server

    2017-01-01

    This book describes the computational challenges posed by the progression toward nanoscale electronic devices and increasingly short design cycles in the microelectronics industry, and proposes methods of model reduction which facilitate circuit and device simulation for specific tasks in the design cycle. The goal is to develop and compare methods for system reduction in the design of high dimensional nanoelectronic ICs, and to test these methods in the practice of semiconductor development. Six chapters describe the challenges for numerical simulation of nanoelectronic circuits and suggest model reduction methods for constituting equations. These include linear and nonlinear differential equations tailored to circuit equations and drift diffusion equations for semiconductor devices. The performance of these methods is illustrated with numerical experiments using real-world data. Readers will benefit from an up-to-date overview of the latest model reduction methods in computational nanoelectronics.

  19. Bioinspired, Ultrastrong, Highly Biocompatible, and Bioactive Natural Polymer/Graphene Oxide Nanocomposite Films.

    Science.gov (United States)

    Zhu, Wen-Kun; Cong, Huai-Ping; Yao, Hong-Bin; Mao, Li-Bo; Asiri, Abdullah M; Alamry, Khalid A; Marwani, Hadi M; Yu, Shu-Hong

    2015-09-09

    Tough and biocompatible nanocomposite films: A new type of bioinspired ultrastrong, highly biocompatible, and bioactive konjac glucomannan (KGM)/graphene oxide (GO) nanocomposite film is fabricated on a large scale by a simple solution-casting method. Such KGM-GO composite films exhibit much enhanced mechanical properties under the strong hydrogen-bonding interactions, showing great potential in the fields of tissue engineering and food package. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Preparation of high laser-induced damage threshold Ta{sub 2}O{sub 5} films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Cheng, E-mail: xucheng@cumt.edu.cn [School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116 (China); Yi, Peng; Fan, Heliang; Qi, Jianwei; Yang, Shuai; Qiang, Yinghuai; Liu, Jiongtian [School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116 (China); Li, Dawei [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2014-08-01

    High laser-induced damage threshold (LIDT) Ta{sub 2}O{sub 5} films were prepared by the sol–gel method using TaCl{sub 5} as a new precursor. The optical properties, surface morphologies, chemical composition, absorption and LIDT of the films were investigated. The results showed that the transparent and homogenous Ta{sub 2}O{sub 5} films had small surface roughness, low absorption and high LIDT even with large number of layers. The maximum LIDT at 1064 nm and 12 ns of the films was 24.8 J/cm{sup 2}. The ion chromatograph and Fourier transform infrared spectrum were used to reveal the functions of the addition of H{sub 2}O{sub 2} in the sol formation. It was shown that H{sub 2}O{sub 2} had two important functions, which were the decrease of Cl element content and the rapid generation of tantalum oxide. The high LIDT achieved was mainly due to the nearly free of defects in the films.

  1. Comparison Study on I&C System Architecture of the Third Generation NPP Between EPR 1600 and US-APWR 1700

    International Nuclear Information System (INIS)

    Nafi Feridian; Arief Heru Kuncoro

    2009-01-01

    In order to support government's programs on research and development of nuclear energy, so a comparative study has been conducted on I&C system architecture of the third generation Nuclear Power Plant (NPP) of EPR 1600 and US-APWR 1700. I&C system is one of supporting systems in nuclear power plant in such away that the nuclear reactor operation can be safely and control. This study compares parameters on main structure of I&C system architecture related with safety system of nuclear power plant operation.The methodology of this study are literature study, data collection, review and analysis. It can be concluded although the two system have some have similarities, both of them have implemented a modern digital and computerized I&C system architecture with high ability of safety level and suitable with American code standard. But in general, they have difference parameters, such as classification of safety-related and non safety-related group, control and monitoring system, supporting systems of defence in depth and also supporting systems of I&C safety. (author)

  2. Understanding the phase separation evolution in efficient P3HT:IC70BA-based bulk-heterojunction polymer solar cells

    International Nuclear Information System (INIS)

    Fan Xi; Guo Shishang; Fang Guojia; Li Songzhan

    2013-01-01

    The effects of solvent and thermal annealing on the morphology of the active layers and the photovoltaic performance of bulk-heterojunction (BHJ) polymer solar cells (PSCs) are investigated systematically, for PSCs based on a blend of poly(3-hexylthiophene) (P3HT) as a donor and indene-C 70 bisadduct (IC 70 BA) as an acceptor. IC 70 BA crystallites are found reasonably well dispersed in the P3HT matrix after spin-coating. However, the IC 70 BA crystallites coarsen in size after annealing, which are clearly evidenced by transmission electron microscopy. Simultaneously, space charge limited current measurements demonstrate that solvent and thermal annealing can improve the hole and electron mobility, which reduces charge-carrier recombination and improves charge-carrier transport in the P3HT and IC 70 BA blend layers. The corresponding current-voltage curves are measured in quantity and we propose a model to show the variation of the ordered structure of P3HT domains and IC 70 BA crystallite characteristics in the phase separation process, expressing a viewpoint on the high performance of BHJ PSCs.

  3. Wear life of sputtered MoSx films extended by high energy ion implantation

    International Nuclear Information System (INIS)

    Okazaki, Yasufumi; Fujiura, Hideo; Nishimura, Makoto

    2000-01-01

    The tribological characteristics of sputtered MoSx films have been reportedly improved by inert gas ion implantation. We tried to extend their wear life by introducing indium, carbon and gallium ion implantation. Pin-on-disk testers were used to measure friction coefficient and wear life in a vacuum, dry and humid air. Comparing with the unimplanted films, we found that the indium ion implanted films showed marked improvement in wear life in a vacuum. Carbon ion implanted films showed improvement in wear life in high humid air. Implantation was effective when it was conducted with maximum concentration at the interface between film and substrate rather than at the neighborhood of the interface inside a film. (author)

  4. Fiscal 1998 joint R and D project on industrial science and technology with university. Research report on the production process of semiconductor devices by Cat-CVD (Development of practical technology for rational use of energy); 1998 nendo daigaku renkei sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika kankei gijutsu jitsuyoka kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-03-01

    The Cat-CVD method is in verification test to establish it as production process of various semiconductor devices such as Ga-As IC, ferroelectric IC, Si IC, and TFT. This paper outlines the research results in fiscal 1998. Study was made on concept design of the Cat-CVD equipment for formation of Ga-As protective film, and basic technology for formation of SiN{sub x} film. Although reducing gas is used for deposition of SiN{sub x} film, anxious modification of oxide ferroelectric materials was avoided by substrate temperature control. Design and fabrication of the CVD equipment for Si ICs were also studied. The equipment was made of Al to control degassing as low as possible. As for production of TFT for LCD, formation technology of high-quality insulating thin film for low-temperature poly-Si TFT by CVD method, and formation of advanced insulating thin film and advanced poly- Si thin film were studied. A large-size deposition method of TFT insulating film, and low-temperature formation technology of poly-Si were also studied. (NEDO)

  5. Amorphous Silicon-Germanium Films with Embedded Nano crystals for Thermal Detectors with Very High Sensitivity

    International Nuclear Information System (INIS)

    Calleja, C.; Torres, A.; Rosales-Quintero, P.; Moreno, M.

    2016-01-01

    We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nano crystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (micro bolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9%K -1 ). Our results show that amorphous silicon-germanium films with embedded nano crystals can be used as thermo sensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

  6. Integrated-circuit microwave detector based on granular high-Tc thin films. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Drobinin, A.V.; Lutovinov, V.S.; Starostenko, I.V. (Moscow Inst. of Radioengineering, Electronics and Automation, (MIREA), Moscow (USSR))

    1991-12-01

    A highly sensitive integrative-circuit microwave detector based on granular High-Tc film has been designed. All matching circuits and High-Tc microbridge are located on the same substrate. The voltage responsivity 10{sup 3} V/W has been found at 65 K and frequency 5 GHz. Different modes of microwave detection have been observed: bolometric response near Tc in high-quality films, rectification mode caused by an array of weak links dominating in low-quality films, detection caused by nonlinear magnetic flux motion. (orig.).

  7. Infrared and optical polarimetry of the radio elliptical IC 5063 (PKS2048-57): discovery of a highly polarized non-thermal nucleus

    Energy Technology Data Exchange (ETDEWEB)

    Hough, J H; Brindle, C; Axon, D J; Bailey, J; Sparks, W B

    1987-02-15

    Two-aperture optical and near-infrared polarization and flux measurements of the radio elliptical galaxy IC 5063 are presented. Analysis of the polarized flux shows that the large infrared excess in the nucleus most likely arises from a steep-spectrum non-thermal source with a polarization of 17 per cent and near-infrared luminosity 6x10/sup 41/ erg s/sup -1/. This result suggests that IC5063 is closely related to the more luminous blazars. The origin of the polarization in the optical is, however, not clear.

  8. Infrared and optical polarimetry of the radio elliptical IC 5063 (PKS2048-57): discovery of a highly polarized non-thermal nucleus

    International Nuclear Information System (INIS)

    Hough, J.H.; Brindle, C.; Axon, D.J.; Bailey, J.; Sparks, W.B.

    1987-01-01

    Two-aperture optical and near-infrared polarization and flux measurements of the radio elliptical galaxy IC 5063 are presented. Analysis of the polarized flux shows that the large infrared excess in the nucleus most likely arises from a steep-spectrum non-thermal source with a polarization of 17 per cent and near-infrared luminosity 6x10 41 erg s -1 . This result suggests that IC5063 is closely related to the more luminous blazars. The origin of the polarization in the optical is, however, not clear. (author)

  9. High efficiency thin-film solar cells for space applications: challenges and opportunities

    NARCIS (Netherlands)

    Leest, R.H. van

    2017-01-01

    In theory high efficiency thin-film III-V solar cells obtained by the epitaxial lift-off (ELO) technique offer excellent characteristics for application in space solar panels. The thesis describes several studies that investigate the space compatibility of the thin-film solar cell design developed

  10. Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Horstmann, F.; Sittinger, V.; Szyszka, B.

    2009-01-01

    In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. ] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min kW. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 deg. C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art ITO films which were obtained at optimized direct current magnetron sputtering conditions

  11. Deposition of thin films and surface modification by pulsed high energy density plasma

    International Nuclear Information System (INIS)

    Yan Pengxun; Yang Size

    2002-01-01

    The use of pulsed high energy density plasma is a new low temperature plasma technology for material surface treatment and thin film deposition. The authors present detailed theoretical and experimental studies of the production mechanism and physical properties of the pulsed plasma. The basic physics of the pulsed plasma-material interaction has been investigated. Diagnostic measurements show that the pulsed plasma has a high electron temperature of 10-100 eV, density of 10 14 -10 16 cm -3 , translation velocity of ∼10 -7 cm/s and power density of ∼10 4 W/cm 2 . Its use in material surface treatment combines the effects of laser surface treatment, electron beam treatment, shock wave bombardment, ion implantation, sputtering deposition and chemical vapor deposition. The metastable phase and other kinds of compounds can be produced on low temperature substrates. For thin film deposition, a high deposition ratio and strong film to substrate adhesion can be achieved. The thin film deposition and material surface modification by the pulsed plasma and related physical mechanism have been investigated. Thin film c-BN, Ti(CN), TiN, DLC and AlN materials have been produced successfully on various substrates at room temperature. A wide interface layer exists between film and substrate, resulting in strong adhesion. Metal surface properties can be improved greatly by using this kind of treatment

  12. High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

    KAUST Repository

    Yang, Zhenqian

    2018-01-10

    The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.

  13. Development of an ASD IC for the Micro Pixel Chamber

    CERN Document Server

    Orito, R; Kubo, H; Miuchi, K; Nagayoshi, T; Okada, Y; Takada, A; Takeda, A; Tanimori, T; Ueno, M

    2004-01-01

    A new amplifier-shaper-discriminator (ASD) chip was designed and manufactured for the Micro Pixel Chamber ($\\mu$-PIC). The design of this ASD IC is based on the ASD IC (TGC-ASD) for the Thin Gap Chamber in the LHC Atlas Experiment. The decay time constant of the preamplifier is 5-times longer than that of the TGC-ASD, and some other modifications have been made in order to improve the signal-to-noise ratio of the $\\mu$-PIC. The ASD IC uses SONY Analog Master Slice bipolar technology. The IC contains 4 channels in a QFP48 package. The decay time constant of the preamplifier is 80 ns and its gain is approximately 0.8 V/pC. The output from the preamplifier is received by a shaper (main-amplifier) with a gain of 7. A baseline restoration circuit is incorporated in the main-amplifier, and the current used for the baseline restoration is 5-times smaller than that of the TGC-ASD. The threshold voltage for the discriminator section is common to the 4 channels and their digital output level is LVDS-compatible. The ASD...

  14. Growth and characterization of high quality ZnS thin films by RF sputtering

    Science.gov (United States)

    Mukherjee, C.; Rajiv, K.; Gupta, P.; Sinha, A. K.; Abhinandan, L.

    2012-06-01

    High optical quality ZnS films are deposited on glass and Si wafer by RF sputtering from pure ZnS target. Optical transmittance, reflectance, ellipsometry, FTIR and AFM measurements are carried out. Effect of substrate temperature and chamber baking for long duration on film properties have been studied. Roughness of the films as measured by AFM are low (1-2Å).

  15. Degradation of ZrN films at high temperature under controlled atmosphere

    International Nuclear Information System (INIS)

    Lu, F.-H.; Lo, W.-Z.

    2004-01-01

    The degradation of ZrN films deposited onto Si substrates by unbalanced magnetron sputtering was investigated over temperatures of 300-1200 deg. C in different atmospheres by analyzing changes in color and appearance, as well as microstructures. The atmospheres contained air, nitrogen, and forming gas (N 2 /H 2 =9), which exhibited drastically different oxygen/nitrogen partial pressure ratios. The resultant degradation included mainly color changes and formation of blisters on the film surface. Color change was associated with the oxidation of the nitride film, which was analyzed by looking into the Gibbs free-energy changes at various temperatures and oxygen partial pressures. Two types of blisters occurred at different temperature ranges. Several large round blisters, denoted as A-type blisters, occurring at low temperatures originated from the large residual stress in the films. Many small irregular blisters, denoted as B-type blisters, appearing at relatively high temperatures resulted from the oxidation of the film

  16. Dielectric and acoustical high frequency characterisation of PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Conde, Janine; Muralt, Paul, E-mail: janine.conde@epfl.ch [Department of Materials Science, EPFL (Switzerland)

    2010-02-15

    Pb(Zr, Ti)O{sub 3} (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {l_brace}100{r_brace} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  17. Construction of sputtering system and preparation of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Kaynak, E.

    2000-01-01

    The preparation of high T c superconducting thin film is important both for the understanding of fundamental behaviours of these materials and for the investigations on the usefulness of technological applications. High quality thin films can be prepared by various kinds of techniques being used today. Among these, sputtering is the most preferred one. The primary aim of this work is the construction of a r. f. and c. magnetron sputtering system. For this goal, a magnetron sputtering system was designed and constructed having powers up to 500W (r.f.) and 1KW (d.c.) that enables to deposit thin films of various kinds of materials: metals, ceramics and magnetic materials. The temperature dependence of the electrical resistance of the films was investigated by using four-point probe method. The zero resistance and the transition with of the films were measured as 80-85 K, and 2-9 K, respectively. The A.C. susceptibility experiments were done by utilising the system that was designed and constructed. The applied field dependence of the real and imaginary components of the susceptibility that were measured between the 77-120 K temperature interval and at a fixed frequency was investigated

  18. Sputtered thin films for high density tape recording

    NARCIS (Netherlands)

    Nguyen, L.T.

    This thesis describes the investigation of sputtered thin film media for high density tape recording. As discussed in Chapter 1, to meet the tremendous demand of data storage, the density of recording tape has to be increased continuously. For further increasing the bit density the key factors are:

  19. Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures

    International Nuclear Information System (INIS)

    Hezam, M.; Tabet, N.; Mekki, A.

    2010-01-01

    ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.

  20. High-quality substrate for fluorescence enhancement using agarose-coated silica opal film.

    Science.gov (United States)

    Xu, Ming; Li, Juan; Sun, Liguo; Zhao, Yuanjin; Xie, Zhuoying; Lv, Linli; Zhao, Xiangwei; Xiao, Pengfeng; Hu, Jing; Lv, Mei; Gu, Zhongze

    2010-08-01

    To improve the sensitivity of fluorescence detection in biochip, a new kind of substrates was developed by agarose coating on silica opal film. In this study, silica opal film was fabricated on glass substrate using the vertical deposition technique. It can provide stronger fluorescence signals and thus improve the detection sensitivity. After coating with agarose, the hybrid film could provide a 3D support for immobilizing sample. Comparing with agarose-coated glass substrate, the agarose-coated opal substrates could selectively enhance particular fluorescence signals with high sensitivity when the stop band of the silica opal film in the agarose-coated opal substrate overlapped the fluorescence emission wavelength. A DNA hybridization experiment demonstrated that fluorescence intensity of special type of agarose-coated opal substrates was about four times that of agarose-coated glass substrate. These results indicate that the optimized agarose-coated opal substrate can be used for improving the sensitivity of fluorescence detection with high quality and selectivity.

  1. Growth of high Tc Bi-Sr-Ca-Cu-O thick films

    International Nuclear Information System (INIS)

    Chaudhry, Sangeeta; Khare, Neeraj; Gupta, A.K.; Nagpal, K.C.; Ojha, V.N.; Reddy, G.S.N.; Tomar, V.S.

    1991-01-01

    Thick films of Bi-Sr-Ca-Cu-O were deposited on (100) MgO substrates by screen-printing technique with the starting composition 1112. To attain the superconducting state, the films were subjected to two-step heat-treatment. R-T and XRD have been studied for films annealed at different durations of the second step. Initially T c (R=O) increased from 77 to 103 K as the annealing duration was increased after which T c decreased. Kinetics of the growth of high T c phase is discussed in the light of results. (author). 7 refs., 2 figs., 1 tab

  2. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  3. The integrated circuit IC EMP transient state disturbance effect experiment method investigates

    International Nuclear Information System (INIS)

    Li Xiaowei

    2004-01-01

    Transient state disturbance characteristic study on the integrated circuit, IC, need from its coupling path outset. Through cable (aerial) coupling, EMP converts to an pulse current voltage and results in the impact to the integrated circuit I/O orifice passing the cable. Aiming at the armament system construction feature, EMP effect to the integrated circuit, IC inside the system is analyzed. The integrated circuit, IC EMP effect experiment current injection method is investigated and a few experiments method is given. (authors)

  4. Moving from irrelevant intellectual capital (IC) reporting to value-relevant IC disclosures: key learning points from the Danish experience

    DEFF Research Database (Denmark)

    Schaper, Stefan; Nielsen, Christian; Roslender, Robin

    2017-01-01

    , largely informed by an accounting perspective, towards IC-related disclosures. Design/methodology/approach – The paper draws on data obtained from 21 semi-structured interviews with respondents in 16 companies. The respondents were contacted following a genealogical exercise carried out on the 102...... with a recognised reporting vehicle such as the annual report, were also encountered. Research limitations/implications – The implications of this study are that timely, value-relevant IC disclosures and compliant reporting, primarily for accountability purposes, have the potential to coexist. In addition...... to the usual limitations of a semi-structured interview research design, respondents’ difficulties in clearly recalling events during the project after some 10-12 years is a further potential limitation. Additionally, the use of internet-based communication channels for disclosure purposes was in its infancy...

  5. High-contrast resolution of film-screen systems in oral and maxillofacial radiology

    International Nuclear Information System (INIS)

    Kaeppler, G.; Reinert, S.

    2007-01-01

    Purpose: The aim was to determine differences in high-contrast resolution of film-screen systems used in dental panoramic and cephalometric radiography by calculating the modulation transfer function (MTF). The radiographs used to determine the MTF should be taken by the same X-ray units as those used for patient radiographs. Materials and methods: The MTF was determined using a lead grid and according to DIN 6867 - 2 for 11 film-screen systems (speed 250, speed class 200 and 400) used in dental radiographic diagnostics. The optical density was measured using a microdensitometer developed by PTB. Results: With 10% of the modulation transfer factor, newly developed film-screen systems (speed class 200 and 400) demonstrated a resolution of 4.9 to 6 line pairs per mm (panoramic radiography). In cephalometric radiography a film-screen system (speed class 400 and green-sensitive film) had a resolution of 4.2 line pairs per mm and surpassed two film-screen systems (speed class 400, resolution of 3 line pairs per mm, blue-sensitive films). (orig.)

  6. NASA Ames’ COSmIC Laboratory Astrophysics Facility: Recent Results and Progress

    Science.gov (United States)

    Salama, Farid; Sciamma-O'Brien, Ella; Bejaoui, Salma

    2018-06-01

    The COSmIC facility was developed at NASA Ames to study interstellar, circumstellar and planetary analogs in the laboratory [1, 2]. COSmIC stands for “Cosmic Simulation Chamber” and is dedicated to the study of molecules, ions and nanoparticles under the low temperature and high vacuum conditions that are required to simulate space environments. COSmIC integrates a variety of instruments that allow generating; processing and monitoring simulated space conditions in the laboratory. It is composed of a Pulsed Discharge Nozzle expansion that generates a plasma in a free supersonic jet expansion coupled to high-sensitivity, complementary in situ diagnostic tools, used for the detection and characterization of the species present in the expansion: a Cavity Ring Down Spectroscopy (CRDS) and fluorescence spectroscopy systems for photonic detection, and a Reflectron Time-Of-Flight Mass Spectrometer (ReTOF-MS) for mass detection [3, 4].Recent advances achieved in laboratory astrophysics using COSmIC will be presented, in particular in the domain of the diffuse interstellar bands (DIBs) [5, 6] and the monitoring, in the laboratory, of the formation of dust grains and aerosols from their gas-phase molecular precursors in environments as varied as circumstellar outflows [7] and planetary atmospheres [8, 9, 10]. Plans for future laboratory experiments on cosmic molecules and grains in the growing field of laboratory astrophysics (NIR-MIR CRDS, Laser Induced Fluorescence spectra of cosmic molecule analogs and the laser induced incandescence spectra of cosmic grain analogs) will also be addressed as well as the implications for astronomy.References: [1] Salama F., Proceed. IAU S251, Kwok & Sandford eds. CUP, 4, 357 (2008).[2] Salama F., et al., Proceed. IAU S332, Y. Aikawa, M. Cunningham, T. Millar, eds., CUP (2018)[3] Biennier L., et al., J. Chem. Phys., 118, 7863 (2003)[4] Ricketts C. et al. IJMS, 300, 26 (2011)[5] Salama F., et al., ApJ., 728, 154 (2011)[6] EDIBLES

  7. Hydrothermal growth of highly textured BaTiO3 films composed of nanowires

    International Nuclear Information System (INIS)

    Zhou Zhi; Tang Haixiong; Sodano, Henry A; Lin Yirong

    2013-01-01

    Textured barium titanate (BaTiO 3 ) films are attracting immense research interest due to their lead-free composition and excellent piezoelectric and dielectric properties. Most synthesis methods for these films require a high temperature, leading to the formation of a secondary phase and an overall decrease in the electrical properties of the ceramic. In order to alleviate these issues, a novel fabrication method is introduced by transferring oriented rutile TiO 2 nanowires to a textured BaTiO 3 film at temperatures below 160 °C. The microstructure and thickness of the fabricated BaTiO 3 films were characterized by scanning electron microscopy, and the crystal structure and degree of orientation were evaluated by x-ray diffraction patterns using the Lotgering method. It is shown that the thickness of the BaTiO 3 film can be controlled by the length of TiO 2 nanowire array template, and the degree of orientation of the textured BaTiO 3 films is highly dependent on the film thickness; the crystallographic orientation has been measured to reach up to 87%. The relative dielectric constant (ε r = 1300) and ferroelectric properties (P r = 2.7 μC cm −2 , E c = 4.0 kV mm −1 ) of the textured BaTiO 3 films were also characterized to demonstrate their potential application in sensors, random access memory, and micro-electromechanical systems. (paper)

  8. The response of film badge dosemeters to high energy photon radiation

    International Nuclear Information System (INIS)

    Playle, T.S.

    1988-12-01

    The sites of the earlier magnox reactor power stations at Berkeley and Bradwell in the United Kingdom are subject to 6 MeV photon radiation from the coolant gas. Since 1966 the Central Electricity Generating Board has included in its film badge personal dosimetry procedures an algorithm for applying a correction for over-response to high energy photon radiation. The correction is based on laboratory irradiations using a source of pure 6 MeV photon radiation. Recently, the opportunity arose to evaluate the response of the film badges at locations around the Berkeley reactors where spectrum-dependent dose equivalent rates had been measured. This report compares the response of the film badge in these characterised radiation environments with the response measured in the calibration laboratory. It is concluded that in the location where measurements were made, the high energy enhancement of measured dose was obscured by the effects of low energy scattered radiation, and it is considered that this will be the case for all practical situations on the power station site. There is therefore no advantage in using the 6 MeV correction factors for routine film badge dosimetry in these locations. (author)

  9. Highly Sensitive Nanostructured SnO2 Thin Films For Hydrogen Sensing

    Science.gov (United States)

    Patil, L. A.; Shinde, M. D.; Bari, A. R.; Deo, V. V.

    2010-10-01

    Nanostructured SnO2 thin films were prepared by ultrasonic spray pyrolysis technique. Aqueous solution (0.05 M) of SnCl4ṡ5H2O in double distilled water was chosen as the starting solution for the preparation of the films. The stock solution was delivered to nozzle with constant and uniform flow rate of 70 ml/h by Syringe pump SK5001. Sono-tek spray nozzle, driven by ultrasonic frequency of 120 kHz, converts the solution into fine spray. The aerosol produced by nozzle was sprayed on glass substrate heated at 150 °C. The sensing performance of the films was tested for various gases such as LPG, hydrogen, ethanol, carbon dioxide and ammonia. The sensor (30 min) showed high gas response (S = 3040 at 350 °C) on exposure of 1000 ppm of hydrogen and high selectivity against other gases. Its response time was short (2 s) and recovery was also fast (12 s). To understand reasons behind this uncommon gas sensing performance of the films, their structural, microstructural, and optical properties were studied using X-ray diffraction, electron microscopy (SEM and TEM) respectively. The results are interpreted

  10. Practical use of Gafchromic(®) EBT films in electron beams for in-phantom dose distribution measurements and monitor units verification.

    Science.gov (United States)

    El Barouky, Jad; Fournier-Bidoz, Nathalie; Mazal, Alejandro; Fares, Georges; Rosenwald, Jean-Claude

    2011-04-01

    The possibility of using the Gafchromic(®) EBT films parallel to incident electron beams was assessed in order to facilitate quality assurance tests for electron dose calculation algorithms. Calibration curves were made for electron energies of 6, 9 and 12MeV. A set-up was suggested for EBT film irradiation parallel to the beam, and the dose measurements were compared to Ionization Chamber (IC) measurements in standard and small electrons beams. A more complex Quality Assurance (QA) set-up was performed with the cylindrical CARPET(®) phantom in order to test our Treatment Planning System (TPS) (Eclipse, Varian Medical Systems, Palo Alto, California) for the clinical situation of a chest wall electron beam therapy. Two dimensional dose distribution and gamma index results were compared to the calculated distribution given by the TPS. The reproducibility was found to be better than 1.5%. We found that applying strong pressure and aligning carefully the film edge with the phantom surface, as recommended for radiographic films, did not completely eliminate the air gap effect. Adding an ultrasound transmission gel and 2 complementary EBT films on the surface gave satisfactory results. The absolute dose for the reference 10×10cm(2) field was always within 1% of IC measurements and for smaller elongated fields (5×10, 4×10 and 3×10cm(2)) the mean difference was -1.4% for the three energies. The mean difference with the IC measurements in R(100), R(90) and R(50) was 0.9mm for all fields and for the three energies. The mean difference in the width of the 90% and the 50% isodoses at R(100) was 0.6mm. With the CARPET(®) phantom set-up very good agreement was found in the 2D dose distribution; 99% of the points satisfied the γdose distribution if ultrasound gel and overlying perpendicular films are added on the phantom surface. Copyright © 2010 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  11. High performance thin-film composite forward osmosis membrane.

    Science.gov (United States)

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A; Schiffman, Jessica D; Elimelech, Menachem

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 mum) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m(2-)h(-1), while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution.

  12. High Performance Thin-Film Composite Forward Osmosis Membrane

    KAUST Repository

    Yip, Ngai Yin

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 μm) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m2-h-1, while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution. © 2010 American Chemical Society.

  13. Innovative Teaching of IC Design and Manufacture Using the Superchip Platform

    Science.gov (United States)

    Wilson, P. R.; Wilcock, R.; McNally, I.; Swabey, M.

    2010-01-01

    This paper describes how an intelligent chip architecture has allowed a large cohort of undergraduate (UG) students to be given effective practical insight into integrated circuit (IC) design by designing and manufacturing their own ICs. To achieve this, an efficient chip architecture, the "Superchip," was developed, which allows multiple student…

  14. High-efficiency THz modulator based on phthalocyanine-compound organic films

    International Nuclear Information System (INIS)

    He, Ting; Zhang, Bo; Shen, Jingling; Zang, Mengdi; Chen, Tianji; Hu, Yufeng; Hou, Yanbing

    2015-01-01

    We report a high efficiency, broadband terahertz (THz) modulator following a study of phthalocyanine-compound organic films irradiated with an external excitation laser. Both transmission and reflection modulations of each organic/silicon bilayers were measured using THz time-domain and continuous-wave systems. For very low intensities, the experimental results show that AlClPc/Si can achieve a high modulation factor for transmission and reflection, indicating that AlClPc/Si has a superior modulation efficiency compared with the other films (CuPc and SnCl 2 Pc). In contrast, the strong attenuation of the transmitted and reflected THz waves revealed that a nonlinear absorption process takes place at the organic/silicon interface

  15. Ultra-high wear resistance of ultra-nanocrystalline diamond film: Correlation with microstructure and morphology

    Science.gov (United States)

    Rani, R.; Kumar, N.; Lin, I.-Nan

    2016-05-01

    Nanostructured diamond films are having numerous unique properties including superior tribological behavior which is promising for enhancing energy efficiency and life time of the sliding devices. High wear resistance is the principal criterion for the smooth functioning of any sliding device. Such properties are achievable by tailoring the grain size and grain boundary volume fraction in nanodiamond film. Ultra-nanocrystalline diamond (UNCD) film was attainable using optimized gas plasma condition in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. Crystalline phase of ultra-nanodiamond grains with matrix phase of amorphous carbon and short range ordered graphite are encapsulated in nanowire shaped morphology. Film showed ultra-high wear resistance and frictional stability in micro-tribological contact conditions. The negligible wear of film at the beginning of the tribological contact was later transformed into the wearless regime for prolonged sliding cycles. Both surface roughness and high contact stress were the main reasons of wear at the beginning of sliding cycles. However, the interface gets smoothened due to continuous sliding, finally leaded to the wearless regime.

  16. IC 3639 - A new bona fide Compton thick AGN unveiled by NuSTAR

    DEFF Research Database (Denmark)

    Boorman, Peter G.; Gandhi, P.; Alexander, D.

    2016-01-01

    We analyse high-quality NuSTAR observations of the local (z = 0.011) Seyfert 2 active galactic nucleus (AGN) IC 3639, in conjunction with archival Suzaku and Chandra data. This provides the first broadband X-ray spectral analysis of the source, spanning nearly two decades in energy (0.5 -30 keV)....

  17. Electrochemically synthesized nanocrystalline spinel thin film for high performance supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Vinay [Carbon Technology Unit, Engineering Materials Division, National Physical Laboratory, New-Delhi, 110012 (India); Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan); Japan Science and Technology Agency, Kawaguchi-shi, Saitama, 332-0012 (Japan); Gupta, Shubhra; Miura, Norio [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan)

    2010-06-01

    Spinels are not known for their supercapacitive nature. Here, we have explored electrochemically synthesized nanostructured NiCo{sub 2}O{sub 4} spinel thin-film electrode for electrochemical supercapacitors. The nanostructured NiCo{sub 2}O{sub 4} spinel thin film exhibited a high specific capacitance value of 580 F g{sup -1} and an energy density of 32 Wh kg{sup -1} at the power density of 4 kW kg{sup -1}, accompanying with good cyclic stability. (author)

  18. Structural and optical properties of zirconia thin films deposited by reactive high-power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaoli; Jin, Jie [Tianjin University, School of Electronic Information Engineering, Tianjin (China); Cheng, Jui-Ching, E-mail: juiching@ntut.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lee, Jyh-Wei [Ming Chi University of Technology, College of Materials Engineering, New Taipei City, Taiwan (China); Wu, Kuo-Hong [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lin, Kuo-Cheng; Tsai, Jung-Ruey [Asia University, Department of Photonics and Communication Engineering, Taichung, Taiwan (China); Liu, Kou-Chen, E-mail: jacobliu@mail.cgu.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China)

    2014-11-03

    Zirconia films are deposited by reactive high power impulse magnetron sputtering (HiPIMS) technology on glass and indium-tin-oxide (ITO)/glass substrates. Preparation, microstructure and optical characteristics of the films have been studied. During deposition, the influence of the target power and duty cycle on the peak current–voltage and power density has been observed in oxide mode. Transparent thin films under different oxygen proportions are obtained on the two substrates. Atomic force microscopy measurements showed that the surface roughness of the films was lower by reactive HiPIMS than DC sputtering for all oxygen contents. The transmission and reflectance properties of differently grown zirconia films were also investigated using an ultraviolet–visible spectrophotometer. The optical transmittance of films grown on glass substrates by HiPIMS reached maximum values above 90%, which exceeded that by DC sputtering. The band edge near 5.86 eV shifted to a lower wavelength for zirconia films prepared with oxygen flow rates lower than 4.5 sccm. For the films prepared on ITO/glass substrates, the transmittance and the band gap of zirconia films were limited by ITO films; a maximum average transmittance of 84% was obtained at 4.5 sccm O{sub 2} and the energy band gap was in the range of 3.7–3.8 eV for oxygen flow rates ranging from 3.5 to 5.0 sccm. Finally, the electrical properties of zirconia films have also been discussed. - Highlights: • Zirconia films are deposited by reactive high power impulse magnetron sputtering. • Low roughness films are obtained. • Films show a high transmittance (> 90%). • Films prepared on glass have a band gap of 5.9 eV.

  19. Transient SEU characterization of analog IC's for ESA's satellite

    International Nuclear Information System (INIS)

    Harboe-Soerensen, R.; Van Dooren, J.; Guerre, F.X.; Constans, H.; Berger, G.; Hajdas, W.

    1999-01-01

    Data analysis of four self switch-off power supply events in the SOHO satellite pointed strongly in the direction of being Cosmic Ray or Proton induced. Further analysis of the relevant power supply schematics identified a number of analog IC's capable of causing or contributing to such events. This paper concentrates on the testing aspects of these analog IC's and presents the results of a Single Event Effects (SEEs) test program. Ground testing, simulating the flight conditions, were carried out at both heavy ion and proton accelerators. (authors)

  20. High Energy Density and High Temperature Multilayer Capacitor Films for Electric Vehicle Applications

    Science.gov (United States)

    Treufeld, Imre; Song, Michelle; Zhu, Lei; Baer, Eric; Snyder, Joe; Langhe, Deepak

    2015-03-01

    Multilayer films (MLFs) with high energy density and high temperature capability (>120 °C) have been developed at Case Western Reserve University. Such films offer a potential solution for electric car DC-link capacitors, where high ripple currents and high temperature tolerance are required. The current state-of-the-art capacitors used in electric cars for converting DC to AC use biaxially oriented polypropylene (BOPP), which can only operate at temperatures up to 85 °C requiring an external cooling system. The polycarbonate (PC)/poly(vinylidene fluoride) (PVDF) MLFs have a higher permittivity compared to that of BOPP (2.3), leading to higher energy density. They have good mechanical stability and reasonably low dielectric losses at 120 °C. Nonetheless, our preliminary dielectric measurements show that the MLFs exhibit appreciable dielectric losses (20%) at 120 °C, which would, despite all the other advantages, make them not suitable for practical applications. Our preliminary data showed that dielectric losses of the MLFs at 120 °C up to 400 MV/m and 1000 Hz originate mostly from impurity ionic conduction. This work is supported by the NSF PFI/BIC Program (IIP-1237708).

  1. High power density supercapacitor electrodes of carbon nanotube films by electrophoretic deposition

    International Nuclear Information System (INIS)

    Du Chunsheng; Pan Ning

    2006-01-01

    Carbon nanotube thin films have been successfully fabricated by the electrophoretic deposition technique. The supercapacitors built from such thin film electrodes have a very small equivalent series resistance, and a high specific power density over 20 kW kg -1 was thus obtained. More importantly, the supercapacitors showed superior frequency response. Our study also demonstrated that these carbon nanotube thin films can serve as coating layers over ordinary current collectors to drastically enhance the electrode performance, indicating a huge potential in supercapacitor and battery manufacturing

  2. Highly flexible transparent thin film heaters based on silver nanowires and aluminum zinc oxides

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Hahn-Gil; Kim, Jin-Hoon; Song, Jun-Hyuk; Jeong, Unyong; Park, Jin-Woo, E-mail: jwpark09@yonsei.ac.kr

    2015-08-31

    In this work, we developed highly flexible transparent film heaters (f-TFHs) composed of Ag nanowire networks (AgNWs) and aluminum zinc oxide (AZO). Uniform AgNWs were roll-to-roll coated on polyethylene terephthalate (PET) substrates using the Mayer rod method, and AZO was sputter-deposited atop the AgNWs at room temperature. The sheet resistance (R{sub s}) and transparency (T{sub opt}) of the AZO-coated AgNWs changed only slightly compared with the uncoated AgNWs. AZO is thermally less conductive than the heat pipes, but increases the thermal efficiency of the heaters blocking the heat convection through the air. Based on Joule heating, a higher average film temperature (T{sub ave}) is attained at a fixed electric potential drop between electrodes (ϕ) as the R{sub s} of the film decreases. Our experimental results revealed that T{sub ave} of the hybrid f-TFH is higher than AgNWs when the ratio of the area coverage of AgNWs to AZO is over a certain value. When a ϕ as low as 3 V/cm was applied to 5 cm × 5 cm f-TFHs, the maximum temperature of the hybrid film was over 100 °C, which is greater than that of AgNWs by more than 30 °C. Furthermore, uniform heating throughout the surfaces is achieved in the hybrid films while heating begins in small areas where densities of the nanowires (NWs) are the highest in the bare network. The non-uniform heating decreases the lifetime of f-TFHs by forming hot spots. Cyclic bending test results indicated that the hybrid films were as flexible as the AgNWs, and the R{sub s} of the hybrid films changes only slightly until 5000 cycles. Combined with the high-throughput coating technology presented here, the hybrid films will provide a robust and scalable strategy for large-area f-TFHs with highly enhanced performance. - Highlights: • We developed highly efficient flexible thin film heaters based on Ag nanowires and AZO composites. • In the composite, AZO plays an important role as an insulation blanket to block heat loss to

  3. Mathematical and Simulation Modelling of Moisture Diffusion Mechanism during Plastic IC Packages Disassembly

    OpenAIRE

    Peng Mou; Dong Xiang; Guanghong Duan

    2013-01-01

    Reuse of plastic IC packages disassembled from printed circuit boards (PCBs) has significant environmental benefits and economic value. The interface delamination caused by moisture diffusion is the main failure mode of IC packages during the disassembling process, which greatly reduces the reusability and reliability of disassembled IC packages. Exploring moisture diffusion mechanism is a prerequisite to optimize prebaking processes before disassembling that is an effective way to avoid the ...

  4. Preparation and characterization of gellan gum/glucosamine/clioquinol film as oral cancer treatment patch.

    Science.gov (United States)

    Tsai, Wanchi; Tsai, Huifang; Wong, Yinuan; Hong, Juiyen; Chang, Shwujen; Lee, Mingwei

    2018-01-01

    To administer cancer drugs with improved convenience to patients and to enhance the bioavailability of cancer drugs for oral cancer therapy, this study prepared gellan gum/glucosamine/clioquinol (GG/GS/CQ) film as the oral cancer treatment patch. GG/GS/CQ film fabricated through the EDC-mediated coupling reactions (GG/GS/CQ/EDC film). The film of the physicochemical properties and drug release kinetics were studied. The effectiveness of GG/GS/CQ/EDC film as oral cancer treatment patch were evaluated with the animal model. The results confirmed that CQ can be incorporated via EDC-mediated covalent conjugation to gellan gum/glucosamine. Mechanical testing revealed that the maximum tensile strength and elongation percentage at break were 1.91kgf/mm 2 and 5.01% for GG/GS/CQ/EDC film. After a drug release experiment lasting 45days, 86.8% of CQ was released from GG/GS/CQ/EDC film. The Huguchi model fit the GG/GS/CQ/EDC drug release data with high correlation coefficients (R 2 =0.9994, respectively). The effect of the CQ dose on oral cancer cells (OC-2) was tested, and the IC 50 of CQ alone and CQ with 10μM CuCl 2 were 9.59 and 2.22μM, respectively. The animal testing indicated that GG/GS/CQ/EDC film was decreased epidermal growth factor receptor (EGFR) expression and suppress tumor progression. These findings provide insights into a possible use for GG/GS/CQ/EDC film for oral ca in clinical practice. The GG/GS/CQ/EDC film is suitable as the dressing for use in the treatment of early-stage cancer or as wound care after surgery in late-stage of oral cancer treatment. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Highly transparent ITO thin films on photosensitive glass: sol-gel synthesis, structure, morphology and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre [University of Szeged, Supramolecular and Nanostructured Materials Research Group of the Hungarian Academy of Sciences, Szeged (Hungary); Beke, Szabolcs [Italian Institute of Technology, Department of Nanophysics, Genova (Italy); Pecz, Bela; Horvath, Robert; Petrik, Peter; Agocs, Emil [Research Institute for Technical Physics and Materials Science, Budapest (Hungary)

    2012-05-15

    Conductive and highly transparent indium tin oxide (ITO) thin films were prepared on photosensitive glass substrates by the combination of sol-gel and spin-coating techniques. First, the substrates were coated with amorphous Sn-doped indium hydroxide, and these amorphous films were then calcined at 550 {sup circle} C to produce crystalline and electrically conductive ITO layers. The resulting thin films were characterized by means of scanning electron microscopy, UV-Vis spectroscopy, X-ray photoelectron spectroscopy and spectroscopic ellipsometry. The measurements revealed that the ITO films were composed of spherical crystallites around 20 nm in size with mainly cubic crystal structure. The ITO films acted as antireflection coatings increasing the transparency of the coated substrates compared to that of the bare supports. The developed ITO films with a thickness of {proportional_to}170-330 nm were highly transparent in the visible spectrum with sheet resistances of 4.0-13.7 k{omega}/sq. By coating photosensitive glass with ITO films, our results open up new perspectives in micro- and nano-technology, for example in fabricating conductive and highly transparent 3D microreactors. (orig.)

  6. High-temperature fabrication of Ag(In,Ga)Se{sub 2} thin films for applications in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xianfeng [International Center for Science and Engineering Programs, Waseda University, Tokyo (Japan); Yamada, Akira [Department of Physical Electronics, Tokyo Institute of Technology, Tokyo (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo (Japan); Kagami Memorial Research Institute for Materials Science, Waseda University, Tokyo (Japan)

    2017-10-15

    Molecular beam epitaxy was used to fabricate Ag(In,Ga)Se{sub 2} (AIGS) thin films. To improve the diffusion of Ag, high-temperature deposition and high-temperature annealing methods were applied to fabricate AIGS films. The as-grown AIGS thin films were then used to make AIGS solar cells. We found that grain size and crystallinity of AIGS films were considerably improved by increasing the deposition and annealing temperature. For high-temperature deposition, temperatures over 600 C led to decomposition of the AIGS film, desorption of In, and deterioration of its crystallinity. The most appropriate deposition temperature was 590 C and a solar cell with a power conversion efficiency of 4.1% was obtained. High-temperature annealing of the AIGS thin films showed improved crystallinity as annealing temperature was increased and film decomposition and In desorption were prevented. A solar cell based on this film showed the highest conversion efficiency of 6.4% when annealed at 600 C. When the annealing temperature was further increased to 610 C, the performance of the cell deteriorated due to loss of the out-of-plane Ga gradient. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. 5th International Conference on Mathematical Modeling in Physical Sciences (IC-MSquare 2016)

    International Nuclear Information System (INIS)

    Vagenas, Elias C.; Vlachos, Dimitrios S.

    2016-01-01

    The 5th International Conference on Mathematical Modeling in Physical Sciences (IC- MSQUARE) took place at Athens, Greece, from Monday, 23"t"h of May, to Thursday, 26"t"h of May 2016. The Conference was attended by more than 130 participants and hosted about 170 oral, poster, and virtual presentations while counted more than 500 pre-registered authors. The 5"t"h IC-MSQUARE consisted of different and diverging workshops and thus covered various research fields where Mathematical Modeling is used, such as Theoretical/Mathematical Physics, Neutrino Physics, Non-Integrable Systems, Dynamical Systems, Computational Nanoscience, Biological Physics, Computational Biomechanics, Complex Networks, Stochastic Modeling, Fractional Statistics, DNA Dynamics, Macroeconomics etc. The scientific program was rather heavy since after the Keynote and Invited Talks in the morning, three parallel oral and one poster session were running every day. However, according to all attendees, the program was excellent with high level talks and the scientific environment was fruitful, thus all attendees had a creative time. We would like to thank the Keynote Speaker and the Invited Speakers for their significant contribution to IC-MSQUARE. We also would like to thank the Members of the International Advisory and Scientific Committees as well as the Members of the Organizing Committee. (paper)

  8. Microstructure and hardness evolution of nanochannel W films irradiated by helium at high temperature

    Science.gov (United States)

    Qin, Wenjing; Wang, Yongqiang; Tang, Ming; Ren, Feng; Fu, Qiang; Cai, Guangxu; Dong, Lan; Hu, Lulu; Wei, Guo; Jiang, Changzhong

    2018-04-01

    Plasma facing materials (PFMs) face one of the most serious challenges in fusion reactors, including unprecedented harsh environment such as 14.1 MeV neutron and transmutation gas irradiation at high temperature. Tungsten (W) is considered to be one of the most promising PFM, however, virtually insolubility of helium (He) in W causes new material issues such as He bubbles and W "fuzz" microstructure. In our previous studies, we presented a new strategy using nanochannel structure designed in the W film to increase the releasing of He atoms and thus to minimize the He nucleation and "fuzz" formation behavior. In this work, we report the further study on the diffusion of He atoms in the nanochannel W films irradiated at a high temperature of 600 °C. More specifically, the temperature influences on the formation and growth of He bubbles, the lattice swelling, and the mechanical properties of the nanochannel W films were investigated. Compared with the bulk W, the nanochannel W films possessed smaller bubble size and lower bubble areal density, indicating that noticeable amounts of He atoms have been released out along the nanochannels during the high temperature irradiations. Thus, with lower He concentration in the nanochannel W films, the formation of the bubble superlattice is delayed, which suppresses the lattice swelling and reduces hardening. These aspects indicate the nanochannel W films have better radiation resistance even at high temperature irradiations.

  9. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.; Wang, Zhenwei; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured

  10. Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

    2016-08-01

    We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

  11. In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

    International Nuclear Information System (INIS)

    Zhao, J.; Noh, D.W.; Chern, C.; Li, Y.Q.; Norris, P.E.; Kear, B.; Gallois, B.

    1991-01-01

    Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology

  12. Study on the effect of subcooling on vapor film collapse on high temperature particle surface

    International Nuclear Information System (INIS)

    Abe, Yutaka; Tochio, Daisuke; Yanagida, Hiroshi

    2000-01-01

    Thermal detonation model is proposed to describe vapor explosion. According to this model, vapor film on pre-mixed high temperature droplet surface is needed to be collapsed for the trigger of the vapor explosion. It is pointed out that the vapor film collapse behavior is significantly affected by the subcooling of low temperature liquid. However, the effect of subcooling on micro-mechanism of vapor film collapse behavior is not experimentally well identified. The objective of the present research is to experimentally investigate the effect of subcooling on micro-mechanism of film boiling collapse behavior. As the results, it is experimentally clarified that the vapor film collapse behavior in low subcooling condition is qualitatively different from the vapor film collapse behavior in high subcooling condition. In case of vapor film collapse by pressure pulse, homogeneous vapor generation occurred all over the surface of steel particle in low subcooling condition. On the other hand, heterogeneous vapor generation was observed for higher subcooling condition. In case of vapor film collapse spontaneously, fluctuation of the gas-liquid interface after quenching propagated from bottom to top of the steel particle heterogeneously in low subcooling condition. On the other hand, simultaneous vapor generation occurred for higher subcooling condition. And the time transient of pressure, particle surface temperature, water temperature and visual information were simultaneously measured in the vapor film collapse experiment by external pressure pulse. Film thickness was estimated by visual data processing technique with the pictures taken by the high-speed video camera. Temperature and heat flux at the vapor-liquid interface were estimated by solving the heat condition equation with the measured pressure, liquid temperature and vapor film thickness as boundary conditions. Movement of the vapor-liquid interface were estimated with the PIV technique with the visual observation

  13. Encapsulate-and-peel: fabricating carbon nanotube CMOS integrated circuits in a flexible ultra-thin plastic film.

    Science.gov (United States)

    Gao, Pingqi; Zhang, Qing

    2014-02-14

    Fabrication of single-walled carbon nanotube thin film (SWNT-TF) based integrated circuits (ICs) on soft substrates has been challenging due to several processing-related obstacles, such as printed/transferred SWNT-TF pattern and electrode alignment, electrical pad/channel material/dielectric layer flatness, adherence of the circuits onto the soft substrates etc. Here, we report a new approach that circumvents these challenges by encapsulating pre-formed SWNT-TF-ICs on hard substrates into polyimide (PI) and peeling them off to form flexible ICs on a large scale. The flexible SWNT-TF-ICs show promising performance comparable to those circuits formed on hard substrates. The flexible p- and n-type SWNT-TF transistors have an average mobility of around 60 cm(2) V(-1) s(-1), a subthreshold slope as low as 150 mV dec(-1), operating gate voltages less than 2 V, on/off ratios larger than 10(4) and a switching speed of several kilohertz. The post-transfer technique described here is not only a simple and cost-effective pathway to realize scalable flexible ICs, but also a feasible method to fabricate flexible displays, sensors and solar cells etc.

  14. Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies

    International Nuclear Information System (INIS)

    Lu, Y.; Ziani, A.; Le Paven-Thivet, C.; Benzerga, R.; Le Gendre, L.; Fasquelle, D.; Kassem, H.

    2011-01-01

    Lanthanum titanium oxynitride (LaTiO x N y ) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO x N y thin films deposited on conductive single crystal Nb–STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiO x N y polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO 2 /Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO x N y films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).

  15. PREFACE: 3rd International Conference on Mathematical Modeling in Physical Sciences (IC-MSQUARE 2014)

    Science.gov (United States)

    2015-01-01

    The third International Conference on Mathematical Modeling in Physical Sciences (IC-MSQUARE) took place at Madrid, Spain, from Thursday 28 to Sunday 31 August 2014. The Conference was attended by more than 200 participants and hosted about 350 oral, poster, and virtual presentations. More than 600 pre-registered authors were also counted. The third IC-MSQUARE consisted of different and diverging workshops and thus covered various research fields where Mathematical Modeling is used, such as Theoretical/Mathematical Physics, Neutrino Physics, Non-Integrable Systems, Dynamical Systems, Computational Nanoscience, Biological Physics, Computational Biomechanics, Complex Networks, Stochastic Modeling, Fractional Statistics, DNA Dynamics, Macroeconomics etc. The scientific program was rather heavy since after the Keynote and Invited Talks in the morning, three parallel oral sessions and one poster session were running every day. However, according to all attendees, the program was excellent with high level of talks and the scientific environment was fruitful, thus all attendees had a creative time. We would like to thank the Keynote Speaker and the Invited Speakers for their significant contribution to IC-MSQUARE. We also would like to thank the Members of the International Advisory and Scientific Committees as well as the Members of the Organizing Committee.

  16. Transport and stability studies on high band gap a-Si:H films ...

    Indian Academy of Sciences (India)

    which are responsible for light-induced degradation by strong Si–Si bonds. This results in ... The films reported have very high deposition rate (4–5 Å/s) compared to that reported .... Room temperature dark conductivity of the SC films ranges from ~10−10 to ... dilution increases σd considerably with smaller activation energy.

  17. Highly Magneto-Responsive Elastomeric Films Created by a Two-Step Fabrication Process

    KAUST Repository

    Marchi, Sophie

    2015-08-24

    An innovative method for the preparation of elastomeric magnetic films with increased magneto-responsivity is presented. Polymeric films containing aligned magnetic microchains throughout their thickness are formed upon the magnetophoretic transport and assembly of microparticles during polymer curing. The obtained films are subsequently magnetized at a high magnetic field of 3 T directed parallel to the orientation of the microchains. We prove that the combination of both alignment of the particles along a favorable direction during curing and the subsequent magnetization of the solid films induces an impressive increase of the films’ deflection. Specifically, the displacements reach few millimeters, up to 85 times higher than those of the nontreated films with the same particle concentration. Such a process can improve the performance of the magnetic films without increasing the amount of magnetic fillers and, thus, without compromising the mechanical properties of the resulting composites. The proposed method can be used for the fabrication of magnetic films suitable as components in systems in which large displacements at relatively low magnetic fields are required, such as sensors and drug delivery or microfluidic systems, especially where remote control of valves is requested to achieve appropriate flow and mixing of liquids.

  18. Highly Magneto-Responsive Elastomeric Films Created by a Two-Step Fabrication Process

    KAUST Repository

    Marchi, Sophie; Casu, Alberto; Bertora, Franco; Athanassiou, Athanassia; Fragouli, Despina

    2015-01-01

    An innovative method for the preparation of elastomeric magnetic films with increased magneto-responsivity is presented. Polymeric films containing aligned magnetic microchains throughout their thickness are formed upon the magnetophoretic transport and assembly of microparticles during polymer curing. The obtained films are subsequently magnetized at a high magnetic field of 3 T directed parallel to the orientation of the microchains. We prove that the combination of both alignment of the particles along a favorable direction during curing and the subsequent magnetization of the solid films induces an impressive increase of the films’ deflection. Specifically, the displacements reach few millimeters, up to 85 times higher than those of the nontreated films with the same particle concentration. Such a process can improve the performance of the magnetic films without increasing the amount of magnetic fillers and, thus, without compromising the mechanical properties of the resulting composites. The proposed method can be used for the fabrication of magnetic films suitable as components in systems in which large displacements at relatively low magnetic fields are required, such as sensors and drug delivery or microfluidic systems, especially where remote control of valves is requested to achieve appropriate flow and mixing of liquids.

  19. DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.

    Science.gov (United States)

    Franklin, Aaron D

    2015-08-14

    For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices. Copyright © 2015, American Association for the Advancement of Science.

  20. Defects in CdSe thin films, induced by high energy electron irradiation

    International Nuclear Information System (INIS)

    Ion, L.; Antohe, S.; Tutuc, D.; Antohe, V.A.; Tazlaoanu, C.

    2004-01-01

    Defects induced in CdSe thin films by high energy electron irradiation are investigated by means of thermally stimulated currents (TSC) spectroscopy. Films were obtained by vacuum deposition from a single source and irradiated with a 5 x 10 13 electrons/cm 2 s -1 beam of 6-MeV energy. It was found that electrical properties of the films are controlled by a deep donor state, located at 0.38 eV below the bottom edge of the conduction band. Parameters of the traps responsible for the recorded TSC peaks were determined. (authors)

  1. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  2. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  3. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  4. Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors.

    Science.gov (United States)

    Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li

    2011-09-01

    Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors.

  5. Visible luminescence from highly textured Tb{sup 3+} doped RF sputtered zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Sreedharan, R. Sreeja; Krishnan, R. Reshmi; Bose, R. Jolly; Kavitha, V.S.; Suresh, S. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Vinodkumar, R. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Department of Physics, University College, Thiruvananthapuram, Kerala (India); Sudheer, S.K. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Pillai, V.P. Mahadevan, E-mail: vpmpillai9@gmail.com [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India)

    2017-04-15

    Highly transparent, luminescent, c-axis oriented Tb{sup 3+} doped ZnO films are prepared by RF magnetron sputtering technique. The structural, morphological, optical and luminescence properties of these films are investigated as a function of Tb{sup 3+} doping concentration by X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), spectroscopic ellipsometry, UV-Visible spectroscopy and photoluminescence spectroscopy. The as-deposited films are found to be highly crystalline with wurtzite hexagonal phase of ZnO. The characteristic features of hexagonal wurtzite structure of ZnO, particularly the appearance of non-polar E{sub 2} modes are easily identified from the Raman spectra of the films. The surface morphology of the films revealed by FESEM and AFM images present a dense distribution of grains. The elemental analysis carried out using energy dispersive X-ray (EDX) spectra confirms the incorporation of Tb{sup 3+} ions in the ZnO lattice. The films are highly transparent in the visible region. Using ellipsometric analysis, the variation of refractive index, dielectric constant and thickness of the films are studied as a function of Tb{sup 3+} doping concentration. The photoluminescence spectra of the Tb{sup 3+} doped ZnO films recorded using an excitation radiation of wavelength 325 nm from a He-Cd laser exhibit visible luminescence ~430, 490, 516 and 542 nm. The origin of visible emissions ~490 and 542 nm in the doped films can be attributed to 5D{sub 4}→7F{sub 6} and 5D{sub 4}→7F{sub 5} transition of Tb{sup 3+} ion respectively. The intensity of the emission at 542 nm is found to be decreasing at higher doping concentration due to concentration quenching effect. The blue emission in the films can be attributed to the electron transition from shallow donor level formed by interstitial Zn atoms to the top of the valence band. The origin of the visible emission ~516 nm is attributed

  6. Individual receptor profiling as a novel tool to support diagnosis of bladder pain syndrome/interstitial cystitis (BPS/IC).

    Science.gov (United States)

    Neuhaus, Jochen; Schulte-Baukloh, Heinrich; Stolzenburg, Jens-Uwe; Speroni di Fenizio, Pietro; Horn, Lars-Christian; Rüffert, Henrik; Hartenstein, Siegurd; Burger, Maximilian; Schulze, Matthias; Schwalenberg, Thilo

    2012-10-01

    Dysregulation of neurotransmitter receptors may contribute to bladder overactivity (OAB) symptoms. To address the question whether specific receptor expression patterns are associated with bladder pain syndrome/interstitial cystitis (BPS/IC), we examined the expression of muscarinic, purinergic and histamine receptors in the detrusor. Detrusor receptor expression was investigated in bladder biopsies of female BPS/IC patients (n = 44; age 60.64 ± 13.78, mean ± SD) and carcinoma patients (n = 11; age 58.91 ± 12.72) undergoing cystectomy. Protein expression of muscarinic (M2, M3), purinergic (P2X1-3) and histamine receptors (H1, H2) was analysed by confocal immunofluorescence, and gene expression was quantified by real-time polymerase chain reaction (qPCR). M2, P2X1, P2X2 and H1 receptor immunoreactivity (-IR) was significantly enhanced in BPS/IC compared to the control group, while there was no difference for M3-, P2X3- and H2-IR. We calculated a score, which separated BPS/IC from control patients with an AUC of 89.46%, showing 84.09% sensitivity and 90.91% specificity. Patients had a 9.25 times enhanced calculated risk for BPS/IC. In addition, two patient subgroups (M2 > M3 and M3 > M2) were observed, which differed in associated purinergic and histamine receptor expression. M2, P2X1, P2X2 and H1 were significantly upregulated in BPS/IC patients, and H2 was occasionally highly overexpressed. There was no significant correlation between receptor protein and gene expression, implying posttranslational mechanisms being responsible for the altered receptor expressions. On the basis of individual receptor profiles, upregulated receptors could be targeted by monotherapy or combination therapy with already approved receptor inhibitors, thereby promoting tailored therapy for patients suffering from BPS/IC-like symptoms.

  7. Challenges in IC design for hearing aids

    DEFF Research Database (Denmark)

    Jørgensen, Ivan Harald Holger

    2012-01-01

    Designing modern hearing aids is a formidable challenge. The size of hearing aids is constantly decreasing, making them virtually invisible today. Still, as in all other modern electronics, more and more features are added to these devices driven by the development in modern IC technology....... The demands for performance and features at very low supply voltage and power consumption constantly prove a challenge to the physical design of hearing aids and not at least the design of the ICs for these. As a result of this all large hearing aid manufacturers use fully customized ASICs in their products...... to produce a competitive advantage. This presentation will give a brief insight into the hearing aid market and industry, a brief view of the historic development of hearing aids and an introduction to how a modern hearing is constructed showing the amplifier as the key component in the modern hearing aid...

  8. Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

    Science.gov (United States)

    Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

    2018-05-01

    Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

  9. Effects of high dose gamma irradiation on ITO thin film properties

    Energy Technology Data Exchange (ETDEWEB)

    Alyamani, A. [National Nanotechnology Center, King Abdul-Aziz City for Science and Technology (KACST), Riyadh (Saudi Arabia); Mustapha, N., E-mail: nazirmustapha@hotmail.com [Dept. of Physics, College of Sciences, Al Imam Mohammad Ibn Saud Islamic University, P.O. Box 90950, Riyadh 11623 (Saudi Arabia)

    2016-07-29

    Transparent thin-film Indium Tin Oxides (ITO) were prepared on 0.7 mm thick glass substrates using a pulsed laser deposition (PLD) process with average thickness of 150 nm. The samples were then exposed to high gamma γ radiation doses by {sup 60}Co radioisotope. The films have been irradiated by performing exposure cycles up to 250 kGy total doses at room temperature. The surface structures before and after irradiation were analysed by x-ray diffraction. Atomic Force Microscopy (AFM) was performed on all samples before and after irradiation to investigate any change in the grain sizes, and also in the roughness of the ITO surface. We investigated the influence of γ irradiation on the spectra of transmittance T, in the ultraviolet-visible-near infrared spectrum using spectrophotometer measurements. Energy band gap E{sub g} was then calculated from the optical spectra for all ITO films. It was found that the optical band gap values decreased as the radiation dose was increased. To compare the effect of the irradiation on refractive index n and extinction coefficient k properties, additional measurements were done on the ITO samples before and after gamma irradiation using an ellipsometer. The optical constants n and k increased by increasing the irradiation doses. Electrical properties such as resistivity and sheet resistance were measured using the four-point probe method. The good optical, electrical and morphological properties maintained by the ITO films even after being exposed to high gamma irradiation doses, made them very favourable to be used as anodes for solar cells and as protective coatings in space windows. - Highlights: • Indium Tin Oxide (ITO) thin films were deposited by pulsed laser deposition. • Effects of Gamma irradiation were investigated. • Changes of optical transmission and electrical properties of ITO films were studied. • Intensity of the diffraction peaks and the film's structure changed with increasing irradiation doses.

  10. Influence of surface oxide films on the SCC of stainless steel in high temperature water

    Energy Technology Data Exchange (ETDEWEB)

    Tani, Junichi; Kato, Shunji; Hirano, Hideo [Central Research Inst. of Electric Power Industry, Komae, Tokyo (Japan). Komae Research Lab; Kushida, H.

    2000-06-01

    Effect of pre-filming conditions on the SCC susceptibility of stainless steels (SS) was investigated by SSRT and electrochemical measurement in high temperature water. The IGSCC ratio of a specimen with the oxide film formed in hydrogen-saturated water (R film specimen) was higher than that of a specimen with the oxide film formed in air-saturated water (O film specimen). When the pre-filmed specimens were coupled with a Cr-depleted SS that simulated weld-heat-affected zones, the galvanic couple between the R film specimen and Cr-depleted SS showed higher corrosion current than the couple between the O film specimen and Cr-depleted SS. The film thickness of the Cr-depleted SS was thinner in the couple with the R film specimen after the test. These results clearly show that the SCC susceptibility of R film specimen was higher than that of the O film specimen, in accordance with the SSRT results. (author)

  11. Tuning microstructure and magnetic properties of electrodeposited CoNiP films by high magnetic field annealing

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Chun; Wang, Kai [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Li, Donggang, E-mail: lidonggang@smm.neu.edu.cn [School of Metallurgy, Northeastern University, Shenyang 110819 (China); Lou, Changsheng [School of Materials Science and Engineering, Shenyang Ligong University, Shenyang 110159 (China); Zhao, Yue; Gao, Yang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Wang, Qiang, E-mail: wangq@mail.neu.edu.cn [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China)

    2016-10-15

    A high magnetic field (up to 12 T) has been used to anneal 2.6-µm-thick Co{sub 50}Ni{sub 40}P{sub 10} films formed by pulse electrodeposition. The effects of high magnetic field annealing on the microstructure and magnetic properties of CoNiP thin films have been investigated. It was found that a high magnetic field accelerated a phase transformation from fcc to hcp and enhanced the preferred hcp-(002) orientation during annealing. Compared with the films annealed without a magnetic field, annealing at 12 T decreased the surface particle size, roughness, and coercivity, but increased the saturation magnetization and remanent magnetization of CoNiP films. The out-of-plane coercivity was higher than that the in-plane for the as-deposited films. After annealing without a magnetic field, the out-of-plane coercivity was equal to that of the in-plane. However, the out-of-plane coercivity was higher than that of the in-plane when annealing at 12 T. These results indicate that high magnetic field annealing is an effective method for tuning the microstructure and magnetic properties of thin films. - Highlights: • High magnetic field annealing accelerated phase transformation from γ to ε. • High magnetic field annealing enhanced preferred hcp-(002) orientation. • High magnetic field annealing decreased particle size, roughness and coercivity. • High magnetic field annealing increased the saturation and remanent magnetization.

  12. Films of chitin, chitosan and cellulose obtained from aqueous suspension treated by irradiation of high intensity ultrasound

    International Nuclear Information System (INIS)

    Almeida, Erika V.R.; Mariano, Mario S.; Campana-Filho, Sergio P.

    2011-01-01

    Films of chitin, chitin/chitosan and chitin/sisal cellulose were obtained by casting their aqueous suspensions previously treated with irradiation of high intensity ultrasound. The films were characterized for surface morphology by scanning electron microscopy and it is possible notice that the films containing chitosan are much more homogeneous. The thermal behavior of the films was evaluated by dynamic mechanical thermal analysis, differential scanning calorimetry, and thermogravimetric analysis and revealing similarity in comparison with the thermal behavior of polysaccharide isolated. The tensile strength was determined and the film containing chitosan showed the best result when compared to other films. The crystallinity index of the films analyzed by X-ray diffraction showed that the films are amorphous material. The analysis by infrared spectroscopy showed that treatment of aqueous suspensions of polysaccharides with irradiation of high intensity ultrasound did not change the chemical structure of polymers. The crystallinity index was determined by X-ray diffraction, revealing that the films are amorphous materials. The results of this study indicate the possibility of processing of chitin, chitosan and cellulose, polysaccharides whose solubilities are limited to a few solvent systems, by treating their aqueous suspensions with high intensity ultrasound. (author)

  13. Effect of high-pressure food processing on the physical properties of synthetic and biopolymer films.

    Science.gov (United States)

    Galotto, M J; Ulloa, P A; Guarda, A; Gavara, R; Miltz, J

    2009-08-01

    The effect of high-pressure processing on 2 plastic food packaging films, a biopolymer (PLASiOx/PLA) and a synthetic polymer (PET-AlOx), was studied. Samples in direct contact with olive oil, as a fatty food simulant, and distilled water, as an aqueous simulant, were subjected to a pressure of 500MPa for 15 min at 50 degrees C. The mechanical, thermal, and gas barrier properties of both films were evaluated after the high-pressure processing (HPP) and compared to control samples that have not undergone this treatment. Significant changes in all properties were observed in both films after the HPP treatment and in contact with the food simulants. In both films an induced crystallization was noticed. In the PLASiOx/PLA film the changes were larger when in contact with water that probably acted as a plasticizer. In the PET-AlOx film the changes in properties were attributed to the formation of pinholes and cracks during the HPP treatment. In this film, most of the properties changed more in the presence of oil as the food simulant.

  14. Growth of high quality large area MgB2 thin films by reactive evaporation

    OpenAIRE

    Moeckly, Brian H.; Ruby, Ward S.

    2006-01-01

    We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials u...

  15. Simulation of design dependent failure exposure levels for CMOS ICs

    International Nuclear Information System (INIS)

    Kaul, N.; Bhuva, B.L.; Rangavajjhala, V.; van der Molen, H.; Kerns, S.E.

    1990-01-01

    The total dose exposure of CMOS ICs introduces bias-dependent parameter shifts in individual devices. The bias dependency of individual parameter shifts of devices cause different designs to behave differently under identical testing conditions. This paper studies the effect of design and bias on the radiation tolerance of ICs and presents an automated design tool that produces different designs for a logic function, and presents important parameters of each design to circuit designer for trade off analysis

  16. A combined thermodynamic cycle based on methanol dissociation for IC (internal combustion) engine exhaust heat recovery

    International Nuclear Information System (INIS)

    Fu, Jianqin; Liu, Jingping; Xu, Zhengxin; Ren, Chengqin; Deng, Banglin

    2013-01-01

    In this paper, a novel approach for exhaust heat recovery was proposed to improve IC (internal combustion) engine fuel efficiency and also to achieve the goal for direct usage of methanol as IC engine fuel. An open organic Rankine cycle system using methanol as working medium is coupled to IC engine exhaust pipe for exhaust heat recovery. In the bottom cycle, the working medium first undergoes dissociation and expansion processes, and is then directed back to IC engine as fuel. As the external bottom cycle and the IC engine main cycle are combined together, this scheme forms a combined thermodynamic cycle. Then, this concept was applied to a turbocharged engine, and the corresponding simulation models were built for both of the external bottom cycle and the IC engine main cycle. On this basis, the energy saving potential of this combined cycle was estimated by parametric analyses. Compared to the methanol vapor engine, IC engine in-cylinder efficiency has an increase of 1.4–2.1 percentage points under full load conditions, while the external bottom cycle can increase the fuel efficiency by 3.9–5.2 percentage points at the working pressure of 30 bar. The maximum improvement to the IC engine global fuel efficiency reaches 6.8 percentage points. - Highlights: • A combined thermodynamic cycle using methanol as working medium for IC engine exhaust heat recovery is proposed. • The external bottom cycle of exhaust heat recovery and IC engine working cycle are combined together. • IC engine fuel efficiency could be improved from both in-cylinder working cycle and external bottom cycle. • The maximum improvement to the IC engine global fuel efficiency reaches 6.8 percentage points at full load

  17. Microscale interfacial behavior at vapor film collapse on high-temperature particle surface

    International Nuclear Information System (INIS)

    Abe, Yutaka; Tochio, Daisuke

    2009-01-01

    It has been pointed out that vapor film on a premixed high-temperature droplet surface should be collapsed to trigger vapor explosion. Thus, it is important to clarify the micromechanism of vapor film collapse behavior for the occurrence of vapor explosion. In the present study, microscale vapor-liquid interface behavior upon vapor film collapse caused by an external pressure pulse is experimentally observed and qualitatively analyzed. In the analytical investigation, interfacial temperature and interface movement were estimated with heat conduction analysis and visual data processing technique. Results show that condensation can possibly occur at the vapor-liquid interface when the pressure pulse arrived. That is, this result indicates that the vapor film collapse behavior is dominated not by fluid motion but by phase change. (author)

  18. Gafchromic EBT-XD film: Dosimetry characterization in high-dose, volumetric-modulated arc therapy.

    Science.gov (United States)

    Miura, Hideharu; Ozawa, Shuichi; Hosono, Fumika; Sumida, Naoki; Okazue, Toshiya; Yamada, Kiyoshi; Nagata, Yasushi

    2016-11-08

    Radiochromic films are important tools for assessing complex dose distributions. Gafchromic EBT-XD films have been designed for optimal performance in the 40-4,000 cGy dose range. We investigated the dosimetric characteristics of these films, including their dose-response, postexposure density growth, and dependence on scanner orientation, beam energy, and dose rate with applications to high-dose volumetric-modulated arc therapy (VMAT) verification. A 10 MV beam from a TrueBeam STx linear accelerator was used to irradiate the films with doses in the 0-4,000 cGy range. Postexposure coloration was analyzed at postirradiation times ranging from several minutes to 48 h. The films were also irradiated with 6 MV (dose rate (DR): 600 MU/min), 6 MV flattening filter-free (FFF) (DR: 1,400 MU/ min), and 10 MV FFF (DR: 2,400 MU/min) beams to determine the energy and dose-rate dependence. For clinical examinations, we compared the dose distribu-tion measured with EBT-XD films and calculated by the planning system for four VMAT cases. The red channel of the EBT-XD film exhibited a wider dynamic range than the green and blue channels. Scanner orientation yielded a variation of ~ 3% in the net optical density (OD). The difference between the film front and back scan orientations was negligible, with variation of ~ 1.3% in the net OD. The net OD increased sharply within the first 6 hrs after irradiation and gradually afterwards. No significant difference was observed for the beam energy and dose rate, with a variation of ~ 1.5% in the net OD. The gamma passing rates (at 3%, 3 mm) between the film- measured and treatment planning system (TPS)-calculated dose distributions under a high dose VMAT plan in the absolute dose mode were more than 98.9%. © 2016 The Authors.

  19. Highly efficient transparent Zn2SiO4:Mn2+ phosphor film on quartz glass

    International Nuclear Information System (INIS)

    Seo, K.I.; Park, J.H.; Kim, J.S.; Kim, G.C.; Yoo, J.H.

    2009-01-01

    Highly efficient transparent Zn 2 SiO 4 :Mn 2+ film phosphors on quartz substrates were deposited by the thermal diffusion of sputtered ZnO:Mn film. They show a textured structure with some preferred orientations. Our film phosphor shows, for the best photoluminescence (PL) brightness, a green PL brightness of about 20% of a commercial Zn 2 SiO 4 :Mn 2+ powder phosphor screen. The film shows a high transmittance of more than 10% at the red-color region. The excellence in PL brightness and transmittance can be explained in terms of the textured crystal growth with a continuous gradient of Zn 2 SiO 4 : Mn 2+ crystals.

  20. SN 2009bb: A PECULIAR BROAD-LINED TYPE Ic SUPERNOVA ,

    International Nuclear Information System (INIS)

    Pignata, Giuliano; Stritzinger, Maximilian; Phillips, M. M.; Morrell, Nidia; Boldt, Luis; Campillay, Abdo; Contreras, Carlos; Gonzalez, Sergio; Krzeminski, Wojtek; Roth, Miguel; Salgado, Francisco; Soderberg, Alicia; Mazzali, Paolo; Anderson, J. P.; Folatelli, Gaston; Foerster, Francisco; Hamuy, Mario; Maza, Jose; Levesque, Emily M.; Rest, Armin

    2011-01-01

    Ultraviolet, optical, and near-infrared photometry and optical spectroscopy of the broad-lined Type Ic supernova (SN) 2009bb are presented, following the flux evolution from -10 to +285 days past B-band maximum. Thanks to the very early discovery, it is possible to place tight constraints on the SN explosion epoch. The expansion velocities measured from near maximum spectra are found to be only slightly smaller than those measured from spectra of the prototype broad-lined SN 1998bw associated with GRB 980425. Fitting an analytical model to the pseudobolometric light curve of SN 2009bb suggests that 4.1 ± 1.9 M sun of material was ejected with 0.22 ± 0.06 M sun of it being 56 Ni. The resulting kinetic energy is 1.8 ± 0.7 x 10 52 erg. This, together with an absolute peak magnitude of M B = -18.36 ± 0.44, places SN 2009bb on the energetic and luminous end of the broad-lined Type Ic (SN Ic) sequence. Detection of helium in the early time optical spectra accompanied with strong radio emission and high metallicity of its environment makes SN 2009bb a peculiar object. Similar to the case for gamma-ray bursts (GRBs), we find that the bulk explosion parameters of SN 2009bb cannot account for the copious energy coupled to relativistic ejecta, and conclude that another energy reservoir (a central engine) is required to power the radio emission. Nevertheless, the analysis of the SN 2009bb nebular spectrum suggests that the failed GRB detection is not imputable to a large angle between the line-of-sight and the GRB beamed radiation. Therefore, if a GRB was produced during the SN 2009bb explosion, it was below the threshold of the current generation of γ-ray instruments.

  1. [High-contrast resolution of film-screen systems in oral and maxillofacial radiology].

    Science.gov (United States)

    Kaeppler, G; Reinert, S

    2007-11-01

    The aim was to determine differences in high-contrast resolution of film-screen systems used in dental panoramic and cephalometric radiography by calculating the modulation transfer function (MTF). The radiographs used to determine the MTF should be taken by the same x-ray units as those used for patient radiographs. The MTF was determined using a lead grid and according to DIN 6867-2 for 11 film-screen systems (speed 250, speed class 200 and 400) used in dental radiographic diagnostics. The optical density was measured using a microdensitometer developed by PTB. With 10% of the modulation transfer factor, newly developed film-screen systems (speed class 200 and 400) demonstrated a resolution of 4.9 to 6 line pairs per mm (panoramic radiography). In cephalometric radiography a film-screen system (speed class 400 and green-sensitive film) had a resolution of 4.2 line pairs per mm and surpassed two film-screen systems (speed class 400, resolution of 3 line pairs per mm, blue-sensitive films). The relevance of this study is underlined by the diagnostic reference doses defined in the German X-ray Ordinance (RöV) which are also intended for dentistry. Film-screen systems (speed 250, speed class 200) previously used in dental panoramic and cephalometric radiography can be replaced by newly developed film-screen systems (speed class 400). In dental radiography dose reductions are possible with film-screen systems (speed class 400) without impairing diagnostic accuracy. The introduction of newly developed film-screen systems (speed class 400) requires lower milliampere-seconds and therefore an adjustment of the x-ray units to lower milliampere settings.

  2. IC3 Internet and Computing Core Certification Global Standard 4 study guide

    CERN Document Server

    Rusen, Ciprian Adrian

    2015-01-01

    Hands-on IC3 prep, with expert instruction and loads of tools IC3: Internet and Computing Core Certification Global Standard 4 Study Guide is the ideal all-in-one resource for those preparing to take the exam for the internationally-recognized IT computing fundamentals credential. Designed to help candidates pinpoint weak areas while there's still time to brush up, this book provides one hundred percent coverage of the exam objectives for all three modules of the IC3-GS4 exam. Readers will find clear, concise information, hands-on examples, and self-paced exercises that demonstrate how to per

  3. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W.; Ryu, Koungmin; Thompson, Mark E.; Zhou, Chongwu

    2010-01-01

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD

  4. Highly transparent films from carboxymethylated microfibrillated cellulose: The effect of multiple homogenization steps on key properties

    DEFF Research Database (Denmark)

    Siró, Istvan; Plackett, David; Hedenqvist, M.

    2011-01-01

    We produced microfibrillated cellulose by passing carboxymethylated sulfite-softwood-dissolving pulp with a relatively low hemicellulose content (4.5%) through a high-shear homogenizer. The resulting gel was subjected to as many as three additional homogenization steps and then used to prepare...... solvent-cast films. The optical, mechanical, and oxygen-barrier properties of these films were determined. A reduction in the quantity and appearance of large fiber fragments and fiber aggregates in the films as a function of increasing homogenization was illustrated with optical microscopy, atomic force...... microscopy, and scanning electron microscopy. Film opacity decreased with increasing homogenization, and the use of three additional homogenization steps after initial gel production resulted in highly transparent films. The oxygen permeability of the films was not significantly influenced by the degree...

  5. Congenital disorder of glycosylation Ic due to a de novo deletion and an hALG-6 mutation.

    Science.gov (United States)

    Eklund, Erik A; Sun, Liangwu; Yang, Samuel P; Pasion, Romela M; Thorland, Erik C; Freeze, Hudson H

    2006-01-20

    We describe a new cause of congenital disorder of glycosylation-Ic (CDG-Ic) in a young girl with a rather mild CDG phenotype. Her cells accumulated lipid-linked oligosaccharides lacking three glucose residues, and sequencing of the ALG6 gene showed what initially appeared to be a homozygous novel point mutation (338G>A). However, haplotype analysis showed that the patient does not carry any paternal DNA markers extending 33kb in the telomeric direction from the ALG6 region, and microsatellite analysis extended the abnormal region to at least 2.5Mb. We used high-resolution karyotyping to confirm a deletion (10-12Mb) [del(1)(p31.2p32.3)] and found no structural abnormalities in the father, suggesting a de novo event. Our findings extend the causes of CDG to larger DNA deletions and identify the first Japanese CDG-Ic mutation.

  6. CMOS Analog IC Design: Fundamentals

    OpenAIRE

    Bruun, Erik

    2018-01-01

    This book is intended for use as the main textbook for an introductory course in CMOS analog integrated circuit design. It is aimed at electronics engineering students who have followed basic courses in mathematics, physics, circuit theory, electronics and signal processing. It takes the students directly from a basic level to a level where they can start working on simple analog IC design projects or continue their studies using more advanced textbooks in the field. A distinct feature of thi...

  7. Differential diagnosis between aneurysm and infundibular dilatation in the IC-PC region with 3D-CTA

    International Nuclear Information System (INIS)

    Kubota, Tsukasa; Niwa, Jun; Tanigawara, Tetsuya; Chiba, Masahiko; Akiyama, Yukinori; Inamura Shigeru

    2000-01-01

    In cases of asymptomatic internal carotid-posterior communicating artery (IC-PC) protrusions, it is sometimes difficult to differentiate infundibular dilatation (ID) from aneurysm by digital subtraction angiography. We applied three-dimensional CT angiography (3D-CTA) in 32 cases of these IC-PC protrusions. SOMATOM PLUS 4 was used under such conditions as to provide images with high spatial resolution. The shaded surface display (SSD) method was adopted to reconstruct the 3D images because of its advantage in separating overlapped vasculature. We also made reference to source images and maximum intensity projection (MIP) to make sure of our diagnoses. In all cases including 4 aneurysms and 28 IDs, we were able to distinguish between ID and aneurysm. The accuracy of 3D-CTA was confirmed by 9 surgical cases. Our technique was as follows: To inject a high dose of diluted contrast medium rapidly to smaller arteries for opacification of contrast medium. To exclude neighboring useless structures except for the very close structures such as posterior clinoid process from the target image focusing on the IC-PC region. To observe the reconstructed image of MIP and SSD from various angles. The contralateral and craniocaudal view were valuable. To change the threshold level gradually and observe the configurational changes of the apex of protrusion. Poorly developed PcomA was mostly delineated at the optimum threshold level. Otherwise, the apex of protrusion remained spherical in an aneurysm and became pyramidal in shape in an ID when the threshold level was gradually decreased. In conclusion, 3D-CTA was a useful modality for IC-PC protrusions to distinguish between ID and aneurysm. (author)

  8. Highly absorbing Cu-In-O thin films for photovoltaic applications

    International Nuclear Information System (INIS)

    Khemiri, N.; Chaffar Akkari, F.; Kanzari, M.; Rezig, B.

    2008-01-01

    We report in this paper on the preparation and characterization of improved quality Cu-In-O films for use as a high-efficiency solar cell absorber. Samples were prepared via sequential thermal vacuum deposition of Cu and In or In and Cu (at 10 -5 mbar) on glass substrates heated at 150 deg. C. After what, the obtained binary systems (Cu/In or In/Cu) were annealed in air at 400 deg. C for 3h. These films were characterized for their structural, electrical and optical properties by using X-ray diffraction (XRD), electrical resistivity and optical (transmittance and reflectance) measurement techniques. The X-ray diffraction (XRD) patterns revealed the presence of CuO and In 2 O 3 phases. The absorption coefficient of Cu-In-O thin films (4.10 5 cm -1 ) is larger than 10 5 cm -1 for the In/Cu case and in the range of 10 4 -10 5 cm -1 for the Cu/In case in the visible spectral range. Direct optical band gaps of 1.40 and 1.52eV were found for the In/Cu and Cu/In cases, respectively. The complex dielectric constants of the Cu-In-O films have been calculated. It was found that the refractive index dispersion data obeyed the Wemple-Di Domenico single oscillator model, from which the dispersion parameters and the high-frequency dielectric constant were determined. The electric free carrier susceptibility and the ratio of the carrier concentration to the effective mass were estimated according to the model of Spitzer and Fan. The electrical measurements show a conversion from a metallic phase to the semiconductor phase by a switching in the electrical resistivity values at an annealing temperature of 275 deg. C. In both cases the samples were highly compensated

  9. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

    NARCIS (Netherlands)

    Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2013-01-01

    A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

  10. EVIDENCE FOR AN INTERACTION IN THE NEAREST STARBURSTING DWARF IRREGULAR GALAXY IC 10

    International Nuclear Information System (INIS)

    Nidever, David L.; Slater, Colin T.; Bell, Eric F.; Ashley, Trisha; Simpson, Caroline E.; Ott, Jürgen; Johnson, Megan; Stanimirović, Snežana; Putman, Mary; Majewski, Steven R.; Jütte, Eva; Oosterloo, Tom A.; Burton, W. Butler

    2013-01-01

    Using deep 21 cm H I data from the Green Bank Telescope we have detected an ≳18.3 kpc long gaseous extension associated with the starbursting dwarf galaxy IC 10. The newly found feature stretches 1.°3 to the northwest and has a large radial velocity gradient reaching to ∼65 km s –1 lower than the IC 10 systemic velocity. A region of higher column density at the end of the extension that possesses a coherent velocity gradient (∼10 km s –1 across ∼26') transverse to the extension suggests rotation and may be a satellite galaxy of IC 10. The H I mass of IC 10 is 9.5 × 10 7 (d/805 kpc) 2 M ☉ and the mass of the new extension is 7.1 × 10 5 (d/805 kpc) 2 M ☉ . An IC 10-M31 orbit using known radial velocity and proper motion values for IC 10 show that the H I extension is inconsistent with the trailing portion of the orbit so that an M31-tidal or ram pressure origin seems unlikely. We argue that the most plausible explanation for the new feature is that it is the result of a recent interaction (and possible late merger) with another dwarf galaxy. This interaction could not only have triggered the origin of the recent starburst in IC 10, but could also explain the existence of previously found counter-rotating H I gas in the periphery of the IC 10 which was interpreted as originating from primordial gas infall

  11. High-precision cutting of polyimide film using femtosecond laser for the application in flexible electronics

    Science.gov (United States)

    Ganin, D. V.; Lapshin, K. E.; Obidin, A. Z.; Vartapetov, S. K.

    2018-01-01

    The experimental results of cutting a polyimide film on the optical glass substrate by means of femtosecond lasers are given. Two modes of laser cutting of this film without damages to a glass base are determined. The first is the photo graphitization using a high repetition rate femtosecond laser. The second is ablative, under the effect of femtosecond laser pulses with high energy and low repetition rate. Cutting of semiconductor chips formed on the polyimide film surface is successfully demonstrated.

  12. A Solder Based Self Assembly Project in an Introductory IC Fabrication Course

    Science.gov (United States)

    Rao, Madhav; Lusth, John C.; Burkett, Susan L.

    2015-01-01

    Integrated circuit (IC) fabrication principles is an elective course in a senior undergraduate and early graduate student's curriculum. Over the years, the semiconductor industry relies heavily on students with developed expertise in the area of fabrication techniques, learned in an IC fabrication theory and laboratory course. The theory course…

  13. Chemical synthesis of highly stable PVA/PANI films for supercapacitor application

    Energy Technology Data Exchange (ETDEWEB)

    Patil, D.S.; Shaikh, J.S.; Dalavi, D.S.; Kalagi, S.S. [Thin Films Materials laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Patil, P.S., E-mail: psp_phy@unishivaji.ac.in [Thin Films Materials laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

    2011-08-15

    Highlights: {yields} Chemical synthesis of PVA/PANI films by spin and dip coating at room temperature. {yields} Thickness dependent supercapacitor behavior of PVA/PANI film. {yields} The synthesized film are highly stable up to 20,000 cycles. - Abstract: Polyvinyl alcohol (PVA)/polyaniline (PANI) thin films were chemically synthesized by adopting two step process: initially a thin layer (200 nm) of PVA was spin coated by using an aqueous PVA solution onto fluorine doped tin oxide (FTO) coated glass substrate, afterwards PANI was chemically polymerized from aniline monomer and dip coated onto the precoated substrate. The thickness of PANI layer was varied from 293 nm to 2367 nm by varying deposition cycles onto the precoated PVA thin film. The resultant PVA/PANI films were characterized for their optical, morphological and electrochemical properties. The FT-IR and Raman spectra revealed characteristic features of the PANI phase. The SEM study showed porous spongy structure. Electrochemical properties were studied by electrochemical impedance measurement and cyclic voltammetry. The electrochemical performance of PVA/PANI thin films was investigated in 1 M H{sub 2}SO{sub 4} aqueous electrolyte. The highest specific capacitance of 571 Fg{sup -1} was observed for the optimized thickness of 880 nm. The film was found to be stable for more than 20,000 cycles. The samples degraded slightly (25% decrement in specific capacitance) for the first 10,000 cycles. The degradation becomes much slower (10.8% decrement in specific capacitance) beyond 10,000 cycles. This dramatic improvement in the electrochemical stability of the PANI samples, without sacrificing specific capacitance was attributed to the optimized PVA layer.

  14. Impact of pulse duration in high power impulse magnetron sputtering on the low-temperature growth of wurtzite phase (Ti,Al)N films with high hardness

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Tetsuhide, E-mail: simizu-tetuhide@tmu.ac.jp [Division of Human Mechatronics Systems, Graduate School of System Design, Tokyo Metropolitan University, 6-6, Asahigaoka, Hino-shi, 191-0065 Tokyo (Japan); Teranishi, Yoshikazu; Morikawa, Kazuo; Komiya, Hidetoshi; Watanabe, Tomotaro; Nagasaka, Hiroshi [Surface Finishing Technology Group, Tokyo Metropolitan Industrial Technology Research Institute, 2-4-10, Aomi, Kohtoh-ku, 135-0064 Tokyo (Japan); Yang, Ming [Division of Human Mechatronics Systems, Graduate School of System Design, Tokyo Metropolitan University, 6-6, Asahigaoka, Hino-shi, 191-0065 Tokyo (Japan)

    2015-04-30

    (Ti,Al)N films were deposited from a Ti{sub 0.33}Al{sub 0.67} alloy target with a high Al content at a substrate temperature of less than 150 °C using high power impulse magnetron sputtering (HIPIMS) plasma. The pulse duration was varied from 60 to 300 μs with a low frequency of 333 Hz to investigate the effects on the dynamic variation of the substrate temperature, microstructural grain growth and the resulting mechanical properties. The chemical composition, surface morphology and phase composition of the films were analyzed by energy dispersive spectroscopy, scanning electron microscopy and X-ray diffraction, respectively. Mechanical properties were additionally measured by using a nanoindentation tester. A shorter pulse duration resulted in a lower rate of increase in the substrate temperature with an exponentially higher peak target current. The obtained films had a high Al content of 70–73 at.% with a mixed highly (0002) textured wurtzite phase and a secondary phase of cubic (220) grains. Even with the wurtzite phase and the relatively high Al contents of more than 70 at.%, the films exhibited a high hardness of more than 30 GPa with a relatively smooth surface of less than 2 nm root-mean-square roughness. The hardest and smoothest surfaces were obtained for pulses with an intermediate duration of 150 μs. The differences between the obtained film properties under different pulse durations are discussed on the basis of the grain growth process observed by transmission electron microscopy. The feasibility of the low-temperature synthesis of AlN rich wurtzite phase (Ti,Al)N films with superior hardness by HIPIMS plasma duration was demonstrated. - Highlights: • Low temperature synthesis of AlN rich wurtzite phase (Ti,Al)N film was demonstrated. • 1 μm-thick TiAlN film was deposited under the temperature less than 150 °C by HIPIMS. • High Al content with highly (0002) textured wurtzite phase structure was obtained. • High hardness of 35 GPa were

  15. Novel texturing method for sputtered zinc oxide films prepared at high deposition rate from ceramic tube targets

    Directory of Open Access Journals (Sweden)

    Hüpkes J.

    2011-10-01

    Full Text Available Sputtered and wet-chemically texture etched zinc oxide (ZnO films on glass substrates are regularly applied as transparent front contact in silicon based thin film solar cells. In this study, chemical wet etching in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl on aluminum doped zinc oxide (ZnO:Al films deposited by magnetron sputtering from ceramic tube targets at high discharge power (~10 kW/m target length is investigated. Films with thickness of around 800 nm were etched in diluted HCl acid and HF acid to achieve rough surface textures. It is found that the etching of the films in both etchants leads to different surface textures. A two steps etching process, which is especially favorable for films prepared at high deposition rate, was systematically studied. By etching first in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl these films are furnished with a surface texture which is characterized by craters with typical diameter of around 500 − 1000 nm. The resulting surface structure is comparable to etched films sputtered at low deposition rate, which had been demonstrated to be able to achieve high efficiencies in silicon thin film solar cells.

  16. Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

    Directory of Open Access Journals (Sweden)

    Akarapu Ashok

    2014-01-01

    Full Text Available Silicon dioxide (SiO2 thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs and microelectromechanical systems (MEMS. Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics.

  17. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  18. Relationships between Charpy impact shelf energies and upper shelf Ksub(IC) values for reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Witt, F.J.

    1983-01-01

    Charpy shelf data and lower bound estimates of Ksub(IC) shelf data for the same steels and test temperatures are given. Included are some typical reactor pressure vessel steels as well as some less tough or degraded steels. The data were evaluated with shelf estimates of Ksub(IC) up to and exceeding 550 MPa√m. It is shown that the high shelf fracture toughness representative of tough reactor pressure vessel steels may be obtained from a knowledge of the Charpy shelf energies. The toughness transition may be obtained either by testing small fracture toughness specimens or by Charpy energy indexing. (U.K.)

  19. Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors

    Institute of Scientific and Technical Information of China (English)

    Shujing Guo; Liqiang Li; Zhongwu Wang; Zeyang Xu; Shuguang Wang; Kunjie Wu; Shufeng Chen; Zongbo Zhang; Caihong Xu; Wenfeng Qiu

    2017-01-01

    Silica is one of the most commonly used materials for dielectric layer in organic thin-film transistors due to its excellent stability,excellent electrical properties,mature preparation process,and good compatibility with organic semiconductors.However,most of conventional preparation methods for silica film are generally performed at high temperature and/or high vacuum.In this paper,we introduce a simple solution spin-coating method to fabricate silica thin film from precursor route,which possesses a low leakage current,high capacitance,and low surface roughness.The silica thin film can be produced in the condition of low temperature and atmospheric environment.To meet various demands,the thickness of film can be adjusted by means of preparation conditions such as the speed of spin-coating and the concentration of solution.The p-type and n-type organic field effect transistors fabricated by using this film as gate electrodes exhibit excellent electrical performance including low voltage and high performance.This method shows great potential for industrialization owing to its characteristic of low consumption and energy saving,time-saving and easy to operate.

  20. Tech-X Corporation releases simulation code for solving complex problems in plasma physics : VORPAL code provides a robust environment for simulating plasma processes in high-energy physics, IC fabrications and material processing applications

    CERN Multimedia

    2005-01-01

    Tech-X Corporation releases simulation code for solving complex problems in plasma physics : VORPAL code provides a robust environment for simulating plasma processes in high-energy physics, IC fabrications and material processing applications

  1. Electrode patterning of ITO thin films by high repetition rate fiber laser

    International Nuclear Information System (INIS)

    Lin, H.K.; Hsu, W.C.

    2014-01-01

    Indium tin oxide (ITO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering system. As-deposited ITO thin film was 100 nm in thickness and a transmittance of ITO film on glass substrate was 79% at 550 nm. Conductive electrodes are then patterned on the ITO films using a high repetition rate fiber laser system followed by a wet chemical etching process. The electrical, optical and structural properties of the patterned samples are evaluated by means of a four-point probe technique, spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that the samples annealed with a pulse repetition rate of 150 kHz or 400 kHz have a low sheet resistivity of 21 Ω/□ and a high optical transmittance of 90%. In addition, it is shown that a higher pulse repetition rate reduces both the residual stress and the surface roughness of the patterned specimens. Therefore, the present results suggest that a pulse repetition rate of 400 kHz represents the optimal processing condition for the patterning of crack-free ITO-coated glass substrates with good electrical and optical properties.

  2. Electrode patterning of ITO thin films by high repetition rate fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Lin, H.K., E-mail: HKLin@mail.npust.edu.tw; Hsu, W.C.

    2014-07-01

    Indium tin oxide (ITO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering system. As-deposited ITO thin film was 100 nm in thickness and a transmittance of ITO film on glass substrate was 79% at 550 nm. Conductive electrodes are then patterned on the ITO films using a high repetition rate fiber laser system followed by a wet chemical etching process. The electrical, optical and structural properties of the patterned samples are evaluated by means of a four-point probe technique, spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that the samples annealed with a pulse repetition rate of 150 kHz or 400 kHz have a low sheet resistivity of 21 Ω/□ and a high optical transmittance of 90%. In addition, it is shown that a higher pulse repetition rate reduces both the residual stress and the surface roughness of the patterned specimens. Therefore, the present results suggest that a pulse repetition rate of 400 kHz represents the optimal processing condition for the patterning of crack-free ITO-coated glass substrates with good electrical and optical properties.

  3. Consciência icônica: o sentimento material do significado

    Directory of Open Access Journals (Sweden)

    Jeffrey C. Alexander

    Full Text Available Resumo Neste ensaio seminal, Jeffrey Alexander apresenta algumas das bases de sua virada icônica. O giro analítico proposto se fundamenta em uma compreensão da materialidade como portadora de conteúdo estético e moral, o que é sintetizado na noção de consciência icônica: o processo em que um observador vincula a superfície estética de uma materialidade a uma determinada estrutura moral de valores sociais.

  4. Facile synthesis of high strength hot-water wood extract films with oxygen-barrier performance

    Science.gov (United States)

    Chen, Ge-Gu; Fu, Gen-Que; Wang, Xiao-Jun; Gong, Xiao-Dong; Niu, Ya-Shuai; Peng, Feng; Yao, Chun-Li; Sun, Run-Cang

    2017-01-01

    Biobased nanocomposite films for food packaging with high mechanical strength and good oxygen-barrier performance were developed using a hot-water wood extract (HWE). In this work, a facile approach to produce HWE/montmorillonite (MMT) based nanocomposite films with excellent physical properties is described. The focus of this study was to determine the effects of the MMT content on the structure and mechanical properties of nanocomposites and the effects of carboxymethyl cellulose (CMC) on the physical properties of the HWE-MMT films. The experimental results suggested that the intercalation of HWE and CMC in montmorillonite could produce compact, robust films with a nacre-like structure and multifunctional characteristics. This results of this study showed that the mechanical properties of the film designated FCMC0.05 (91.5 MPa) were dramatically enhanced because the proportion of HWE, MMT and CMC was 1:1.5:0.05. In addition, the optimized films exhibited an oxygen permeability below 2.0 cm3 μm/day·m2·kPa, as well as good thermal stability due to the small amount of CMC. These results provide a comprehensive understanding for further development of high-performance nanocomposites which are based on natural polymers (HWE) and assembled layered clays (MMT). These films offer great potential in the field of sustainable packaging.

  5. Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

    Directory of Open Access Journals (Sweden)

    Pei-Chung Lin

    2016-08-01

    Full Text Available Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 °C are saturation magnetization 9.13 × 105 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 103 A/m, and electrical resistivity 3.75 μΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

  6. Influence of interdiffusion on the magnetic properties of Co/Si (100) films after high magnetic field annealing

    International Nuclear Information System (INIS)

    Zhao, Yue; Wang, Kai; Wang, Qiang; Li, Guojian; Lou, Changsheng; Pang, Hongxuan; He, Jicheng

    2015-01-01

    The influence of interdiffusion on the magnetic properties of Co/Si (100) films after thermal annealing in the presence of a strong magnetic field was investigated. The interdiffusion coefficients of films that were annealed at temperatures of 380 °C and 420 °C in the presence of high magnetic fields were not affected. However, the interdiffusion coefficient of films annealed at 400 °C in the presence of a high magnetic field decreased significantly. The change in the interdiffusion coefficient, caused by high magnetic field annealing, increased the content of the magnetic phase. This increase in the magnetic phase improved the saturation magnetization. A new method of high magnetic field annealing is presented that can modulate the diffusion and magnetic properties of thin films. - Highlights: • Interdiffusion of Co/Si (100) films by high magnetic field annealing was studied. • Thickness of the diffusion layer was reduced by magnetic field annealing at 400 °C. • Interdiffusion coefficient decreased following magnetic field annealing at 400 °C. • Saturation magnetization increased after high magnetic field annealing at 400 °C

  7. Magnetic properties and high frequency characteristics of FeCoN thin films

    Directory of Open Access Journals (Sweden)

    Tae-Jong Hwang

    2016-05-01

    Full Text Available (Fe65Co35N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2. A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1∼2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

  8. Crystallization and segregation in vitreous rutile films annealed at high temperature

    International Nuclear Information System (INIS)

    Omari, M.A.; Sorbello, R.S.; Aita, C.R.

    2005-01-01

    Vitreous titania films with rutile short-range order were sputter deposited on unheated fused silica substrates, sequentially annealed at 973 and 1273 K, and examined by Raman microscopy, scanning electron microscopy, and x-ray diffraction. A segregated microstructure developed after the 1273 K anneal. This microstructure consists of supermicron-size craters dispersed in a matrix of submicron rutile crystals. Ti-O short-range order in the craters is characteristic of a mixture of two high pressure phases, m-TiO 2 (monoclinic P2 1 /c space group) and α-TiO 2 (tetragonal Pbcn space group). We calculated that a high average compressive stress parallel to the substrate must be accommodated in the films at 1273 K, caused by the difference in the thermal expansion coefficients of titania and fused silica. The formation of the segregated microstructure is modeled by considering two processes at work at 1273 K to lower a film's internal energy: crystallization and nonuniform stress relief. The Gibbs-Thomson relation shows that small m-TiO 2 crystallites are able to form directly from vitreous TiO 2 at 1273 K. However, the preferred mechanism for forming α-TiO 2 is likely to be by epitaxial growth at crystalline rutile twin boundaries (secondary crystallization). Both phases are denser than crystalline rutile and reduce the average thermal stress in the films

  9. High-throughput combinatorial chemical bath deposition: The case of doping Cu (In, Ga) Se film with antimony

    Science.gov (United States)

    Yan, Zongkai; Zhang, Xiaokun; Li, Guang; Cui, Yuxing; Jiang, Zhaolian; Liu, Wen; Peng, Zhi; Xiang, Yong

    2018-01-01

    The conventional methods for designing and preparing thin film based on wet process remain a challenge due to disadvantages such as time-consuming and ineffective, which hinders the development of novel materials. Herein, we present a high-throughput combinatorial technique for continuous thin film preparation relied on chemical bath deposition (CBD). The method is ideally used to prepare high-throughput combinatorial material library with low decomposition temperatures and high water- or oxygen-sensitivity at relatively high-temperature. To check this system, a Cu(In, Ga)Se (CIGS) thin films library doped with 0-19.04 at.% of antimony (Sb) was taken as an example to evaluate the regulation of varying Sb doping concentration on the grain growth, structure, morphology and electrical properties of CIGS thin film systemically. Combined with the Energy Dispersive Spectrometer (EDS), X-ray Photoelectron Spectroscopy (XPS), automated X-ray Diffraction (XRD) for rapid screening and Localized Electrochemical Impedance Spectroscopy (LEIS), it was confirmed that this combinatorial high-throughput system could be used to identify the composition with the optimal grain orientation growth, microstructure and electrical properties systematically, through accurately monitoring the doping content and material composition. According to the characterization results, a Sb2Se3 quasi-liquid phase promoted CIGS film-growth model has been put forward. In addition to CIGS thin film reported here, the combinatorial CBD also could be applied to the high-throughput screening of other sulfide thin film material systems.

  10. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  11. Development of liquid film thickness measurement technique by high-density multipoint electrodes method

    International Nuclear Information System (INIS)

    Arai, Takahiro; Furuya, Masahiro; Kanai, Taizo

    2010-01-01

    High-density multipoint electrode method was developed to measure a liquid film thickness transient on a curved surface. The devised method allows us to measure spatial distribution of liquid film with its conductance between electrodes. The sensor was designed and fabricated as a multilayer print circuit board, where electrode pairs were distributed in reticular pattern with narrow interval. In order to measure a lot of electrode pairs at a high sampling rate, signal-processing method used by the wire mesh sensor measurement system was applied. An electrochemical impedance spectrometry concludes that the sampling rate of 1000 slices/s is feasible without signal distortion by electric double layer. The method was validated with two experimental campaigns: (1) a droplet impingement on a flat film and (2) a jet impingement on a rod-shape sensor surface. In the former experiment, a water droplet having 4 mm in diameter impinged onto the 1 mm thick film layer. A visual observation study with high-speed video camera shows after the liquid impingement, the water layer thinning process was clearly demonstrated with the sensor. For the latter experiment, the flexible circuit board was bended to form a cylindrical shape to measure water film on a simulated fuel rod in bundle geometry. A water jet having 3 mm in diameter impinged onto the rod-shape sensor surface. The process of wetting area enlargement on the rod surface was demonstrated in the same manner that the video-frames showed. (author)

  12. APPLICATTON OF SCTENTIF'IC PRINCIPLES IN MERINO SHEEP ...

    African Journals Online (AJOL)

    THE PRACTICAI- APPLICATTON OF SCTENTIF'IC PRINCIPLES IN MERINO SHEEP BREEDING. C.A. van der ..... There is, however, no practical evidence in this ... 1910" Comparison of three Australian merino strains for wool and body traits.

  13. Impact test data obtained by analysis of high speed camera films

    International Nuclear Information System (INIS)

    Aquaro, D.; Forasassi, G.

    1990-01-01

    This paper deals with a high speed film elaboration procedure concerning 9m International Atomic Energy Agency free drop tests of a spent nuclear fuel cask. Drop tests of reduced-scale cask models, performed at the Dipartimento di Construzioni Meccaniche e Nucleari of Pisa, are described. The high speed films recorded during the impact test enabled the authors to obtain the motion law of the cask models. A numerical method implemented in order to perform the first and second differentiation of the displacement-time recorded data is shown. The experimental displacement-time discrete data are approximated with a Langrange interpolation polynomial, and the obtained curve is smoothed with a Butterworth digital low pass filter with M poles, in order to reduce the spurious oscillations caused by different kinds of errors which might be unacceptably amplified in the differentiation processes. Good agreement is obtained between the accelerations derived by the film data analysis and the experimentally-measured ones. The reported technique may be a valuable tool for the analysis of transient dynamic phenomena. (author)

  14. Electronic Instability at High Flux-Flow Velocities in High-Tc Superconducting Films

    DEFF Research Database (Denmark)

    Doettinger, S. G.; Huebener, R. P.; Gerdemann, R.

    1994-01-01

    At high flux-flow velocities in type-II superconductors the nonequilibrium distribution of the quasiparticles leads to an electronic instability and an aburpt switching into a state with higher electric resistivity, as predicted by Larkin and Ovchinnikow (LO). We report the first obervation...... of this effect in a high-temperature superconductor, namely in epitaxial c-axis oriented films of YBa(2)Cu3O(7)-(delta). Using the LO therory, we have extracted from out results the inelastic quasiparticle scattering rare tau(in)(-1), which strongly decreases with decreasing temperature below T-c...

  15. Comparison of fracture toughness (K{sub IC}) and strain energy release rate (G) of selected nuclear graphites

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Se-Hwan, E-mail: shchi@kaeri.re.kr

    2016-08-01

    The fracture behaviors of six nuclear graphite grades for a high-temperature gas-cooled reactor (HTGR), which differed in coke particle size and forming method, were characterized based on the ASTM standard graphite fracture toughness test method (ASTM D 7779-11) at room temperature. The G appeared to show good correlation with the fracture surface roughness and the G-Δa curves appeared to describe the fracture process well from crack initiation to failure. Comparison of the local (K{sub IC}) and gross (G{sub IC}, G-Δa) fracture parameters showed that the resistance to crack initiation and propagation was higher in the extruded or vibration molded medium particle size grades (PCEA, NBG-17, NBG-18: EVM group) than in the iso-molded fine particle size grades (IG-110, IG-430, NBG-25: IMF group). The ASTM may need to provide a guideline for G-Δa curve analysis. The K{sub IC} appeared to increase with specimen thickness (size).

  16. High performance sandwich structured Si thin film anodes with LiPON coating

    Science.gov (United States)

    Luo, Xinyi; Lang, Jialiang; Lv, Shasha; Li, Zhengcao

    2018-04-01

    The sandwich structured silicon thin film anodes with lithium phosphorus oxynitride (LiPON) coating are synthesized via the radio frequency magnetron sputtering method, whereas the thicknesses of both layers are in the nanometer range, i.e. between 50 and 200 nm. In this sandwich structure, the separator simultaneously functions as a flexible substrate, while the LiPON layer is regarded as a protective layer. This sandwich structure combines the advantages of flexible substrate, which can help silicon release the compressive stress, and the LiPON coating, which can provide a stable artificial solidelectrolyte interphase (SEI) film on the electrode. As a result, the silicon anodes are protected well, and the cells exhibit high reversible capacity, excellent cycling stability and good rate capability. All the results demonstrate that this sandwich structure can be a promising option for high performance Si thin film lithium ion batteries.

  17. EVN observations of the OH megamaser galaxies Mrk 231 and IC 694

    NARCIS (Netherlands)

    Klockner, HR; Baan, WA; Migenes,; Reid, MJ

    2002-01-01

    We present EVN observations of hydroxyl (OH) main-line emission in two megamaser sources Mrk 231 and IC 694. The observations indicate that the broad maser emission lines originate within the nuclear regions. A single 1667 MHz main-line feature is seen at the nucleus of IC 694. In Mrk 231 both

  18. PREFACE: 4th International Conference on Mathematical Modeling in Physical Sciences (IC-MSquare2015)

    Science.gov (United States)

    Vlachos, Dimitrios; Vagenas, Elias C.

    2015-09-01

    The 4th International Conference on Mathematical Modeling in Physical Sciences (IC-MSQUARE) took place in Mykonos, Greece, from Friday 5th June to Monday 8th June 2015. The Conference was attended by more than 150 participants and hosted about 200 oral, poster, and virtual presentations. There were more than 600 pre-registered authors. The 4th IC-MSQUARE consisted of different and diverging workshops and thus covered various research fields where Mathematical Modeling is used, such as Theoretical/Mathematical Physics, Neutrino Physics, Non-Integrable Systems, Dynamical Systems, Computational Nanoscience, Biological Physics, Computational Biomechanics, Complex Networks, Stochastic Modeling, Fractional Statistics, DNA Dynamics, Macroeconomics etc. The scientific program was rather intense as after the Keynote and Invited Talks in the morning, three parallel oral and one poster session were running every day. However, according to all attendees, the program was excellent with a high quality of talks creating an innovative and productive scientific environment for all attendees. We would like to thank the Keynote Speaker and the Invited Speakers for their significant contribution to IC-MSQUARE. We also would like to thank the Members of the International Advisory and Scientific Committees as well as the Members of the Organizing Committee.

  19. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325 °C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200 μm in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  20. Stability of amorphous Ge-As(Sb)-Se films to high-energy electron irradiation

    International Nuclear Information System (INIS)

    Savchenko, N.D.

    1999-01-01

    The results of the investigation of high-energy electron (6.5 MeV) irradiation effect on structure, optical, electrical and mechanical properties for thin films obtained by thermal evaporation of Ge-As-Se and Ge-Sb-Se glasses have been presented. The electron-induced changes in film properties versus average coordination number and relative free volume for bulk glasses have been discussed. It has been found that the higher radiation stability is characteristic to the films deposited from the glasses with the lower relative free volume

  1. Magnetic properties changes of MnAs thin films irradiated with highly charged ions

    OpenAIRE

    Trassinelli , Martino; Gafton , V.; Eddrief , Mahmoud; Etgens , Victor H.; Hidki , S.; Lacaze , Emmanuelle; Lamour , Emily; Luo , X.; Marangolo , Massimiliano; Merot , Jacques; Prigent , Christophe; Reuschl , Regina; Rozet , Jean-Pierre; Steydli , S.; Vernhet , Dominique

    2013-01-01

    International audience; We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150~nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\\times10^{12}$ to $1.6\\times10^{15}$~ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Prelim...

  2. Silicone Adhesives for High Temperature Inflatable Fabrics and Polymer Films, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Thin films, elastomeric materials, high temperature fabrics and adhesives that are capable of withstanding thermal extremes (-130oC to 500oC) are highly desirable...

  3. IC 3475: A stripped dwarf galaxy in the Virgo cluster

    International Nuclear Information System (INIS)

    Vigroux, L.; Thuan, T.X.; Vader, J.P.; Lachieze-Rey, M.

    1986-01-01

    We have obtained B and R CCD and H I observations of the Virgo dwarf galaxy IC 3475. The galaxy is remarkable for its very large diameter (approx.10 kpc for a Virgo distance modulus of 31) and is comparable in size to the large dwarfs discussed by Sandage and Binggeli. Its light profile is best fitted by an exponential law, characteristic of a dwarf Magellanic irregular galaxy. It possesses a central bar with many knots and inclusions concentrated toward the center of the galaxy. These knots and inclusions have the same color (B-Rapprox.1.5) as the rest of the galaxy and are best explained as intermediate-age (1--7 x 10 9 yr) star clusters such as those found in the Magellanic Clouds. Despite possessing the photometric structure of a dwarf Magellanic irregular galaxy, IC 3475 contains less than 5.3 x 10 6 M/sub sun/ of neutral hydrogen. Its hydrogen mass to blue light ratio is less than 0.01, approx.60 times less than the mean value observed for dwarf Magellanic irregulars. It is most likely that IC 3475, which is located near the core of the Virgo cluster, is a stripped dwarf galaxy. The very large size of the galaxy (its diameter is approx.1.8 times larger than that of ''normal'' dwarfs) appears to rule out evolution of IC 3475 from a normal dwarf irregular or to a normal dwarf elliptical

  4. Across plane ionic conductivity of highly oriented neodymium doped ceria thin films.

    Science.gov (United States)

    Baure, G; Kasse, R M; Rudawski, N G; Nino, J C

    2015-05-14

    A methodology to limit interfacial effects in thin films is proposed and explained. The strategy is to reduce the impact of the electrode interfaces and eliminate cross grain boundaries that impede ionic motion. To this end, highly oriented Nd0.1Ce0.9O2-δ (NDC) nanocrystalline thin films were grown using pulsed laser deposition (PLD) on platinized single crystal a-plane sapphire substrates. High resolution cross-sectional transmission electron microscopy (HR-XTEM), scanning electron microscopy (SEM) and X-ray diffraction (XRD) verified the films were textured with columnar grains. The average widths of the columns were approximately 40 nm and not significantly changed by film thickness between 100 and 300 nm. HR-XTEM and XRD determined the {111} planes of NDC were grown preferentially on top of the {111} planes of platinum despite the large lattice mismatch between the two planes. From the XRD patterns, the out of plane strains on the platinum and NDC layers were less than 1%. This can be explained by the coincident site lattice (CSL) theory. Rotating the {111} ceria planes 19.11° with respect to the {111} platinum planes forms a Σ7 boundary where 1 in 7 cerium lattice sites are coincident with the platinum lattice sites. This orientation lowers interfacial energy promoting the preferential alignment of those two planes. The across plane ionic conductivity was measured at low temperatures (<350 °C) for the various film thicknesses. It is here shown that columnar grain growth of ceria can be induced on platinized substrates allowing pathways that are clear of blocking grain boundaries that cause conductivities to diminish as film thickness decreases.

  5. Development of the method of sensitivity improvement of photographic film applicable in high-energy physics experiments

    International Nuclear Information System (INIS)

    Gokieli, V.D.

    1986-01-01

    Sensitivity improvement of photographic films applicable in high-energy physics experiments is discussed. To get optimal operating conditions for photographic film PT-6 to check its physical properties on electron beam and in cosmic rays a set for film samples exposure in visible spectrum and in X-rays is constructed. The set includes a start up device, high-voltage pulse oscillator, shapers, a chamber for the sample exposure, voltage divider and electron oscillograph

  6. Flexible Ultrahigh-Temperature Polymer-Based Dielectrics with High Permittivity for Film Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Zejun Pu

    2017-11-01

    Full Text Available In this report, flexible cross-linked polyarylene ether nitrile/functionalized barium titanate(CPEN/F-BaTiO3 dielectrics films with high permittivitywere prepared and characterized. The effects of both the F-BaTiO3 and matrix curing on the mechanical, thermal and dielectric properties of the CPEN/F-BaTiO3 dielectric films were investigated in detail. Compared to pristine BaTiO3, the surface modified BaTiO3 particles effectively improved their dispersibility and interfacial adhesion in the polymer matrix. Moreover, the introduction of F-BaTiO3 particles enhanced dielectric properties of the composites, with a relatively high permittivity of 15.2 and a quite low loss tangent of 0.022 (1 kHz when particle contents of 40 wt % were utilized. In addition, the cyano (–CN groups of functional layer also can serve as potential sites for cross-linking with polyarylene ether nitrile terminated phthalonitrile (PEN-Ph matrix and make it transform from thermoplastic to thermosetting. Comparing with the pure PEN-ph film, the latter results indicated that the formation of cross-linked network in the polymer-based system resulted in increased tensile strength by ~67%, improved glass transition temperature (Tg by ~190 °C. More importantly, the CPEN/F-BaTiO3 composite films filled with 30 wt % F-BaTiO3 particles showed greater energy density by nearly 190% when compared to pure CPEN film. These findings enable broader applications of PEN-based composites in high-performance electronics and energy storage devices materials used at high temperature.

  7. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  8. High-frequency permeability in double-layered structure of amorphous Co-Ta-Zr films

    International Nuclear Information System (INIS)

    Ochiai, Y.; Hayakawa, M.; Hayashi, K.; Aso, K.

    1988-01-01

    The high-frequency permeability of amorphous Co-Ta-Zr films was studied and the frequency dependence was described in terms of the eddy-current-loss formula. For the double-layered structure intervened with SiO 2 film, the degradation of the permeability became apparent with the decrease of SiO 2 thickness

  9. Radiolytic preparation of thin Au film directly on resin substrate using high-energy electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Ohkubo, Yuji, E-mail: okubo@upst.eng.osaka-u.ac.jp [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Seino, Satoshi; Nakagawa, Takashi; Kugai, Junichiro [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ueno, Koji [Japan Electron Beam Irradiation Service Ltd., 5-3 Ozushima, Izumiohtsu, Osaka 595-0074 (Japan); Yamamoto, Takao A. [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2016-04-01

    A novel method for preparing thin Au films directly on resin substrates using an electron beam was developed. The thin Au films were prepared on a resin substrate by the reduction of Au ions in an aqueous solution via irradiation with a high-energy electron beam (4.8 MeV). This reduction method required 7 s of the irradiation time of the electron beam. Furthermore, no reductant or catalyst was needed. As the concentration of Au ions in the precursor solution was increased, the amount of Au deposited on the resin substrate increased, too, and the structure of the prepared Au film changed. As a result, the film color changed as well. Cross-sectional scanning electron microscope images of the thus-prepared Au film indicated that the Au films were consisted of two layers: a particle layer and a bottom bulk layer. There was strong adhesion between the Au films and the underlying resin substrates. This was confirmed by the tape-peeling test and through ultrasonic cleaning. After both processes, Au remained on the resin substrates, while most of the particle-like moieties were removed. This indicated that the thin Au films prepared via irradiation with a high-energy electron beam adhered strongly to the resin substrates. - Highlights: • A thin gold (Au) film was formed by EBIRM for the first time. • The irradiation time of the electron beam was less than 10 s. • Thin Au films were obtained without reductant or catalyst. • Au films were consisted of two layers: a particle layer and a bottom bulk layer. • There was strong adhesion between the bottom bulk layer and the underlying resin substrates.

  10. Evaluation of accelerated test parameters for CMOS IC total dose hardness prediction

    International Nuclear Information System (INIS)

    Sogoyan, A.V.; Nikiforov, A.Y.; Chumakov, A.I.

    1999-01-01

    The approach to accelerated test parameters evaluation is presented in order to predict CMOS IC total dose behavior in variable dose-rate environment. The technique is based on the analytical model of MOSFET parameters total dose degradation. The simple way to estimate model parameter is proposed using IC's input-output MOSFET radiation test results. (authors)

  11. H I IMAGING OBSERVATIONS OF SUPERTHIN GALAXIES. II. IC 2233 AND THE BLUE COMPACT DWARF NGC 2537

    International Nuclear Information System (INIS)

    Matthews, Lynn D.; Uson, Juan M.

    2008-01-01

    We have used the Very Large Array to image the H I 21 cm line emission in the edge-on Sd galaxy IC 2233 and the blue compact dwarf NGC 2537. We also present new optical B, R, and Hα imaging of IC 2233 obtained with the WIYN telescope. Despite evidence of localized massive star formation in the form of prominent H II regions and shells, supergiant stars, and a blue integrated color, IC 2233 is a low surface brightness system with a very low global star formation rate (∼ sun yr -1 ), and we detect no significant 21 cm radio continuum emission from the galaxy. The H I and ionized gas disks of IC 2233 are clumpy and vertically distended, with scale heights comparable to that of the young stellar disk. Both the stellar and H I disks of IC 2233 appear flared, and we also find a vertically extended, rotationally anomalous component of H I extending to ∼ 2.4d 10 kpc from the midplane. The H I disk exhibits a mild lopsidedness as well as a global corrugation pattern with a period of ∼7d 10 kpc and an amplitude of ∼150d 10 pc. To our knowledge, this is the first time corrugations of the gas disk have been reported in an external galaxy; these undulations may be linked to bending instabilities or to underlying spiral structure and suggest that the disk is largely self-gravitating. Lying at a projected distance of 16'.7 from IC 2233, NGC 2537 has an H I disk with a bright, tilted inner ring and a flocculent, dynamically cold outer region that extends to ∼3.5 times the extent of the stellar light (D 25 ). Although NGC 2537 is rotationally-dominated, we measure H I velocity dispersions as high as σ V.HI ∼25 km s -1 near its center, indicative of significant turbulent motions. The inner rotation curve rises steeply, implying a strong central mass concentration. Our data indicate that IC 2233 and NGC 2537 do not constitute a bound pair and most likely lie at different distances. We also find no compelling evidence of a recent minor merger in either IC 2233 or NGC

  12. EMERGING I&C TECHNOLOGIES UNDER THE SHIFTING REGULATORY ENVIRONMENT IN SOUTH KOREA

    Directory of Open Access Journals (Sweden)

    Gyunyoung eHeo

    2015-04-01

    Full Text Available The role of Probabilistic Safety Assessment (PSA has been supplementary and Risk-Informed Applications (RIAs based on the insight from PSA has also been utilized limitedly in the licensing process for Nuclear Power Plants (NPPs in South Korea. However, as the technical significance of PSA is getting increased, PSA has become a mandatory part of Safety Analysis Reports and Periodic Safety Review. It is worthwhile to highlight the role of emerging Instrumentation and Control (I&C technologies including human-machine interface (HMI in developing more credible and realistic PSA models. Particularly, it is expected that the information technology (i.e. software embedded in digital I&C can adjust over- and under conservatism in analyzing risk. In this study, authors proposed the cases which would be able to significantly reduce risk if advanced I&C supported by information technologies is applied. In regard, the several enabling techniques and their effects are proposed. In order to improve the commercial competitiveness of NPPs, the need of collaboration and synergetic outcome of I&C, HMI and PSA should be emphasized.

  13. Emerging I&C Technologies Under the Shifting Regulatory Environment in South Korea

    Energy Technology Data Exchange (ETDEWEB)

    Heo, Gyunyoung [Department of Nuclear Engineering, Kyung Hee University, Youngin-si (Korea, Republic of); Seong, Poong Hyun; Kang, Hyun Gook, E-mail: hyungook@kaist.ac.kr [Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2015-04-29

    The role of probabilistic safety assessment (PSA) has been supplementary and risk-informed applications based on the insight from PSA have also been utilized limitedly in the licensing process for nuclear power plants (NPPs) in South Korea. However, as the technical significance of PSA is getting increased, PSA has become a mandatory part of Safety Analysis Reports and Periodic Safety Review. It is worthwhile to highlight the role of emerging instrumentation and control (I&C) technologies including human–machine interface (HMI) in developing more credible and realistic PSA models. Particularly, it is expected that the information technology (i.e., software) embedded in digital I&C can adjust over- and under conservatism in analyzing risk. In this study, authors proposed the cases which would be able to significantly reduce risk if advanced I&C supported by information technologies is applied. In regard, the several enabling techniques and their effects are proposed. In order to improve the commercial competitiveness of NPPs, the need of collaboration and synergetic outcome of I&C, HMI, and PSA should be emphasized.

  14. Characteristics of (Ti,Ta)N thin films prepared by using pulsed high energy density plasma

    Energy Technology Data Exchange (ETDEWEB)

    Feng Wenran [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Chen Guangliang [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Li Li [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Lv Guohua [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Zhang Xianhui [College of Science, Changchun University of Science and Technology, Changchun 130022, Jilin Province (China); Niu Erwu [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Liu Chizi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Yang Size [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

    2007-07-21

    (Ti,Ta)N films were prepared by pulsed high energy density plasma (PHEDP) from a coaxial gun in N{sub 2} gas. The coaxial gun is composed of a tantalum inner electrode and a titanium outer one. Material characteristics of the (Ti,Ta)N film were investigated by x-ray photoelectron spectroscopy and x-ray diffraction. The microstructure of the film was observed by a scanning electron microscope. The elemental composition and the interface of the film/substrate were analysed using Auger electron spectrometry. Our results suggest that the binary metal nitride film (Ti,Ta)N, can be prepared by PHEDP. It also shows that dense nanocrystalline (Ti,Ta)N film can be achieved.

  15. Encapsulate-and-peel: fabricating carbon nanotube CMOS integrated circuits in a flexible ultra-thin plastic film

    International Nuclear Information System (INIS)

    Gao, Pingqi; Zhang, Qing

    2014-01-01

    Fabrication of single-walled carbon nanotube thin film (SWNT-TF) based integrated circuits (ICs) on soft substrates has been challenging due to several processing-related obstacles, such as printed/transferred SWNT-TF pattern and electrode alignment, electrical pad/channel material/dielectric layer flatness, adherence of the circuits onto the soft substrates etc. Here, we report a new approach that circumvents these challenges by encapsulating pre-formed SWNT-TF-ICs on hard substrates into polyimide (PI) and peeling them off to form flexible ICs on a large scale. The flexible SWNT-TF-ICs show promising performance comparable to those circuits formed on hard substrates. The flexible p- and n-type SWNT-TF transistors have an average mobility of around 60 cm 2  V −1  s −1 , a subthreshold slope as low as 150 mV  dec −1 , operating gate voltages less than 2 V, on/off ratios larger than 10 4 and a switching speed of several kilohertz. The post-transfer technique described here is not only a simple and cost-effective pathway to realize scalable flexible ICs, but also a feasible method to fabricate flexible displays, sensors and solar cells etc. (paper)

  16. High-rate deposition of photocatalytic TiO2 films by oxygen plasma assist reactive evaporation method

    International Nuclear Information System (INIS)

    Sakai, Tetsuya; Kuniyoshi, Yuji; Aoki, Wataru; Ezoe, Sho; Endo, Tatsuya; Hoshi, Yoichi

    2008-01-01

    High-rate deposition of titanium dioxide (TiO 2 ) film was attempted using oxygen plasma assisted reactive evaporation (OPARE) method. Photocatalytic properties of the film were investigated. During the deposition, the substrate temperature was fixed at 400 deg. C. The film deposition rate can be increased by increasing the supply of titanium atoms to the substrate, although oversupply of the titanium atoms causes oxygen deficiency in the films, which limits the deposition rate. The film structure depends strongly on the supply ratio of oxygen molecules to titanium atoms O 2 /Ti and changes from anatase to rutile structure as the O 2 /Ti supply ratio increased. Consequently, the maximum deposition rates of 77.0 nm min -1 and 145.0 nm min -1 were obtained, respectively, for the anatase and rutile film. Both films deposited at such high rates showed excellent hydrophilicity and organic decomposition performance. Even the film with rutile structure deposited at 145.0 nm min -1 had a contact angle of less than 2.5 deg. by UV irradiation for 5.0 h and an organics-decomposition performance index of 8.9 [μmol l -1 min -1 ] for methylene blue

  17. Polyether ether ketone film. Polyether ether ketone film

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, S. (Sumitomo Chemical Co. Ltd., Tokyo (Japan))

    1990-07-05

    The characteristics and the film making process of polyether ether ketone (PEEK) resin, and the characteristics and the applications of PEEK film, are described. PEEK is aromatic polyketone with super thermal resistance. Though it is a crystalline polymer of which the crystallinity is controlled to 48% in a highest degree, it has also amorphous property, thus it shows unique property. The characteristics of PEEK resin are found in thermal resistance, incombusti-bility, transparency, chemical resistance, light resistance and radiation resistance. As for the film making process, casting method by T-die is generally adopted. The general properties of PEEK film are excellent in high thermal resistance, good electrical properties, chemical resistance, hydrolysis resistance, radiation resistance and imcombusti-bility. In the application of PEEK film, new development is expected in following fields; a high performance composite, flexible print substrate with high thermal resistance, insulating tape with thermal resistance, and a general film in the nuclear energy industry. 5 figs., 5 tabs.

  18. Preparation and characterization of thin-film Pd–Ag supported membranes for high-temperature applications

    NARCIS (Netherlands)

    Fernandez Gesalaga, Ekain; Coenen, Kai; Helmi Siasi Farimani, Arash; Melendez, J.; Zuniga, Jon; Pacheco Tanaka, David Alfredo; van Sint Annaland, Martin; Gallucci, Fausto

    2015-01-01

    This paper reports the preparation, characterization and stability tests of thin-film Pd–Ag supported membranes for high-temperature fluidized bed membrane reactor applications. Various thin-film supported membranes have been prepared by simultaneous Pd–Ag electroless plating and have been initially

  19. High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

    Science.gov (United States)

    Yu, Byoung-Soo; Ha, Tae-Jun

    2018-04-01

    The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

  20. Highly ductile multilayered films by layer-by-layer assembly of oppositely charged polyurethanes for biomedical applications.

    Science.gov (United States)

    Podsiadlo, Paul; Qin, Ming; Cuddihy, Meghan; Zhu, Jian; Critchley, Kevin; Kheng, Eugene; Kaushik, Amit K; Qi, Ying; Kim, Hyoung-Sug; Noh, Si-Tae; Arruda, Ellen M; Waas, Anthony M; Kotov, Nicholas A

    2009-12-15

    Multilayered thin films prepared with the layer-by-layer (LBL) assembly technique are typically "brittle" composites, while many applications such as flexible electronics or biomedical devices would greatly benefit from ductile, and tough nanostructured coatings. Here we present the preparation of highly ductile multilayered films via LBL assembly of oppositely charged polyurethanes. Free-standing films were found to be robust, strong, and tough with ultimate strains as high as 680% and toughness of approximately 30 MJ/m(3). These results are at least 2 orders of magnitude greater than most LBL materials presented until today. In addition to enhanced ductility, the films showed first-order biocompatibility with animal and human cells. Multilayered structures incorporating polyurethanes open up a new research avenue into the preparation of multifunctional nanostructured films with great potential in biomedical applications.

  1. Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors

    Science.gov (United States)

    2011-12-01

    band gap of highly textured PZT thin films. The deposition process variables were - argon and oxygen flows, chamber pressure, RF power (DC Bias...needed another parameter to equate with the number of unknowns in the resultant model equations. From Figure 24, electronic polarizability affects the... Polarizability and Optical dielectric response of a thin.film , ., ,__~--~---\\- 000 01’ "󈧶 Ots Tncnt.re"’°l Effective Polarizability = Reddy

  2. Application of high-resolution film for lithography to synchrotron X-ray topography

    International Nuclear Information System (INIS)

    Mizuno, Kaoru; Ito, Kazuyoshi; Iwami, Masayuki; Hashimoto, Eiji; Kino, Takao.

    1994-01-01

    A high-resolution film for lithography is applied to a detector for synchrotron radiation topography, instead of a nuclear plate. The film shows much better resolution than that of the plate although exposure time an about 500 times longer is required. The size distribution of interstitial loops grown as vacancy sources in a nearly perfect aluminum crystal after a temperature rise is examined from the while beam topograph. (author)

  3. 3-D ICs as a Platform for IoT Devices

    Science.gov (United States)

    2017-03-01

    are both naturally reduced in 3-D ICs. I. INTRODUCTION The Internet of Things (IoT) is a novel computing paradigm based on connecting physical devices...cost and high transparency [6]. PET is used as the substrate of p-i-n type solar cells and is compatible with the traditional deposition process of solar ...10 138 3.42 to 3.48 130 to 185 2.6 400 to 1,060memory Solar cells Polyethylene 1 · 1016 0.2 1.58 to 1.64 2 to 2.7 3.9 400 to 1,600Terephthalate (PET

  4. Micro-machined high-frequency (80 MHz) PZT thick film linear arrays.

    Science.gov (United States)

    Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K

    2010-10-01

    This paper presents the development of a micromachined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT sol-gel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (-6 dB) of 60%. An insertion loss of -41 dB and adjacent element crosstalk of -21 dB were found at the center frequency.

  5. Low mass MEMS/NEMS switch for a substitute of CMOS transistor using single-walled carbon nanotube thin film

    Science.gov (United States)

    Jang, Min-Woo

    Power dissipation is a key factor for mobile devices and other low power applications. Complementary metal oxide semiconductor (CMOS) is the dominant integrated circuit (IC) technology responsible for a large part of this power dissipation. As the minimum feature size of CMOS devices enters into the sub 50 nanometer (nm) regime, power dissipation becomes much worse due to intrinsic physical limits. Many approaches have been studied to reduce power dissipation of deeply scaled CMOS ICs. One possible candidate is the electrostatic electromechanical switch, which could be fabricated with conventional CMOS processing techniques. They have critical advantages compared to CMOS devices such as almost zero standby leakage in the off-state due to the absence of a pn junction and a gate oxide, as well as excellent drive current in the on-state due to a metallic channel. Despite their excellent standby power dissipation, the electrostatic MEMS/NEMS switches have not been considered as a viable replacement for CMOS devices due to their large mechanical delay. Moreover, previous literature reveals that their pull-in voltage and switching speed are strongly proportional to each other. This reduces their potential advantage. However, in this work, we theoretically and experimentally demonstrated that the use of single-walled carbon nanotube (SWNT) with very low mass density and strong mechanical properties could provide a route to move off of the conventional trend with respect to the pull-in voltage / switching speed tradeoff observed in the literature. We fabricated 2-terminal fixed- beam switches with aligned composite SWNT thin films. In this work, layer-by-layer (LbL) self-assembly and dielectrophoresis were selected for aligned-composite SWNT thin film deposition. The dense membranes were successfully patterned to form submicron beams by e-beam lithography and oxygen plasma etching. Fixed-fixed beam switches using these membranes successfully operated with approximately 600

  6. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  7. Low-cost, highly transparent flexible low-e coating film to enable electrochromic windows with increased energy savings

    Energy Technology Data Exchange (ETDEWEB)

    Berland, Brian [ITN Energy Systems, Inc., Littleton, CO (United States); Hollingsworth, Russell [ITN Energy Systems, Inc., Littleton, CO (United States)

    2015-03-31

    Five Quads of energy are lost through windows annually in the U.S. Low-e coatings are increasingly employed to reduce the wasted energy. Most commonly, the low-e coating is an oxide material applied directly to the glass at high temperature. With over 100,000,000 existing homes, a retrofit product is crucial to achieve widespread energy savings. Low-e films, i.e. coatings on polymeric substrates, are now also available to meet this need. However, the traditional oxide materials and process is incompatible with low temperature plastics. Alternate high performing low-e films typically incorporate materials that limit visible transmission to 35% or less. Further, the cost is high. The objective of this award was to develop a retrofit, integrated low-e/electrochromic window film to dramatically reduce energy lost through windows. While field testing of state-of-the-art electrochromic (EC) windows show the energy savings are maximized if a low-e coating is used in conjunction with the EC, available low-e films have a low visible transmission (~70% or less) that limits the achievable clear state and therefore, appearance and energy savings potential. Comprehensive energy savings models were completed at Lawrence Berkeley National Lab (LBNL). A parametric approach was used to project energy usage for windows with a large range of low-e properties across all U.S. climate zones, without limiting the study to materials that had already been produced commercially or made in a lab. The model enables projection of energy savings for low-e films as well as integrated low-e/EC products. This project developed a novel low-e film, optimized for compatibility with EC windows, using low temperature, high deposition rate processes for the growth of low-e coatings on plastic films by microwave plasma enhanced chemical vapor deposition. Silica films with good density and optical properties were demonstrated at deposition rates as high as 130Å/sec. A simple bi-layer low-e stack of

  8. In situ preparation of biomimetic thin films and their surface-shielding effect for organisms in high vacuum.

    Directory of Open Access Journals (Sweden)

    Hiroshi Suzuki

    Full Text Available Self-standing biocompatible films have yet to be prepared by physical or chemical vapor deposition assisted by plasma polymerization because gaseous monomers have thus far been used to create only polymer membranes. Using a nongaseous monomer, we previously found a simple fabrication method for a free-standing thin film prepared from solution by plasma polymerization, and a nano-suit made by polyoxyethylene (20 sorbitan monolaurate can render multicellular organisms highly tolerant to high vacuum. Here we report thin films prepared by plasma polymerization from various monomer solutions. The films had a flat surface at the irradiated site and were similar to films produced by vapor deposition of gaseous monomers. However, they also exhibited unique characteristics, such as a pinhole-free surface, transparency, solvent stability, flexibility, and a unique out-of-plane molecular density gradient from the irradiated to the unirradiated surface of the film. Additionally, covering mosquito larvae with the films protected the shape of the organism and kept them alive under the high vacuum conditions in a field emission-scanning electron microscope. Our method will be useful for numerous applications, particularly in the biological sciences.

  9. Virtual design and qualification of IC backend structures

    NARCIS (Netherlands)

    Silfhout, van R.B.R.; Sluis, van der O.; Driel, van W.D.; Janssen, J.H.J.; Zhang, G.Q.

    2006-01-01

    For Integrated Circuit (IC) wafer backend development, process developers have to design robust backend structures that guarantee both functionality and reliability during waferfab processes, packaging, qualification tests and lifetime. Figure 1 shows a simplified diagram for the design (and

  10. High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films

    Directory of Open Access Journals (Sweden)

    Miguel Muñoz Rojo

    2015-08-01

    Full Text Available The out of plane electrical conductivity of highly anisotropic Bi2Te3 films grown via electro-deposition process was determined using four probe current-voltage measurements performed on 4.6 - 7.2 μm thickness Bi2Te3 mesa structures with 80 - 120 μm diameters sandwiched between metallic film electrodes. A three-dimensional finite element model was used to predict the electric field distribution in the measured structures and take into account the non-uniform distribution of the current in the electrodes in the vicinity of the probes. The finite-element modeling shows that significant errors could arise in the measured film electrical conductivity if simpler one-dimensional models are employed. A high electrical conductivity of (3.2 ± 0.4 ⋅ 105 S/m is reported along the out of plane direction for Bi2Te3 films highly oriented in the [1 1 0] direction.

  11. Low-temperature growth of highly crystallized transparent conductive fluorine-doped tin oxide films by intermittent spray pyrolysis deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fukano, Tatsuo; Motohiro, Tomoyoshi [Toyota Central Research and Development Laboratories Inc., Nagakute, Aichi 480-1192 (Japan)

    2004-05-30

    Following the procedure by Sawada et al. (Thin Solid Films 409 (2002) 46), high-quality SnO{sub 2}:F films were grown on glass substrates at relatively low temperatures of 325-340C by intermittent spray pyrolysis deposition using a perfume atomizer for cosmetics use. Even though the substrate temperature is low, as-deposited films show a high optical transmittance of 92% in the visible range, a low electric resistivity of 5.8x10{sup -4}{omega}cm and a high Hall mobility of 28cm{sup 2}/Vs. The F/Sn atomic ratio (0.0074) in the films is low in comparison with the value (0.5) in the sprayed solution. The carrier density in the film is approximately equal to the F-ion density, suggesting that most of the F-ions effectively function as active dopants. Films' transmittance and resistivity show little change after a 450C 60min heat treatment in the atmosphere, evidencing a high heat resistance. The SnO{sub 2}:F films obtained in this work remove the difficulty to improve the figure of merit at low synthesis temperatures.

  12. Free-standing 3D graphene/polyaniline composite film electrodes for high-performance supercapacitors

    Science.gov (United States)

    Wang, Shiyong; Ma, Li; Gan, Mengyu; Fu, Shenna; Dai, Wenqin; Zhou, Tao; Sun, Xiaowu; Wang, Huihui; Wang, Huining

    2015-12-01

    The research paper describes polyaniline (PANI) nanowires array on flexible polystyrene microsphere/reduced graphene (PS/rGN) film is synthesized by dilute polymerization, and then the PS microspheres are removed to form free-standing three-dimensional (3D) rGN/PANI composite film. The chemical and structural properties of the 3D rGN/PANI film are characterized by scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Brunauer-Emmett-Teller (BET), and the results confirm the 3D rGN/PANI film is synthesized successfully. When the film is used as a supercapacitor electrode, the maximum specific capacitance is as high as 740 F g-1 (or 581 F cm-3 for volumetric capacitance) at a current density of 0.5 A g-1 and the specific capacitance retains 87% of the initial after constant charge-discharge 1000 cycles at current density of 10 A g-1. It is believed that the free-standing 3D rGN/PANI film will have a great potential for application in supercapacitors.

  13. IC modelling in the IRSN EPR level 1 PSA

    International Nuclear Information System (INIS)

    Delache, J.

    2012-01-01

    Today in France, an EPR (European Pressurized Water Reactor) Unit is under construction at the Flamanville site. The creation authorization was granted in April 2007 and the plant commissioning is planned for 2012. The plant operator (EDF) provided for the construction license several PSA (Probabilistic Safety Assessment) studies. IRSN, as TSO (Technical Safety Organisation), wishes to dispose of the appropriate knowledge and tools for the independent verification of the operator studies and so developed its own model of PSA level 1. The goal is not to rebuild the plant operator PSA (with a full scope...) but to dispose of a simplified model able to clearly point out specific important issues. In the IRSN model a particular effort has recently been done on the Digital IC modelling. The IC (Instrumentation and Control) is modelled in the IRSN EPR PSA by using Fault Trees. Instead, EDF EPR PSA applies the COMPACT model to simplify the command and instrumentation logics. The IRSN model is more detailed in order to be more accurate in the global analysis of the Digital IC. For instance the communication ways between automates are considered as well as the failure of support systems. The model is still under development mainly in order to define the CCF (Common Cause Failure) which may be considered. (authors)

  14. Immobilization of biomolecules on cysteamine-modified polyaniline film for highly sensitive biosensing.

    Science.gov (United States)

    Cai, Qi; Xu, Baojian; Ye, Lin; Di, Zengfeng; Zhang, Jishen; Jin, Qinghui; Zhao, Jianlong; Xue, Jian; Chen, Xianfeng

    2014-03-01

    We present a new cysteamine (CS)-modified polyaniline (PANI) film for highly efficient immobilization of biomolecules in biosensing technology. This electrochemical deposited PANI film treated with CS and glutaraldehyde could be employed as an excellent substrate for biomolecules immobilization. The parameters of PANI growth were optimized to obtain suitable surface morphology of films for biomolecules combination with the help of electron and atomic force microscopy. Cyclic voltammetry (CV) was utilized to illustrate the different electrochemical activities of each modified electrode. Due to the existence of sulfydryl group and amino group in CS, surface modification with CS was proven to reduce oxidized units on PANI film remarkably, as evidenced by both ATR-FTIR and Raman spectroscopy characterizations. Furthermore, bovine serum albumin (BSA) was used as the model protein to investigate the immobilization efficiency of biomolecules on the PANI film, comparative study using quartz crystal microbalance (QCM) showed that BSA immobilized on CS-modified PANI could be increased by at least 20% than that without CS-modified PANI in BSA solution with the concentration of 0.1-1mg/mL. The CS-modified PANI film would be significant for the immobilization and detection of biomolecules and especially promising in the application of immunosensor for ultrasensitive detection. © 2013 Published by Elsevier B.V.

  15. The Effects of Industry Type, Company Size and Performance on Chinese Companies’ IC Disclosure: A Research Note

    Directory of Open Access Journals (Sweden)

    Yi An

    2011-09-01

    Full Text Available This paper examines the effects of industry type, firm size and corporate performance on intellectual capital (IC disclosure among Chinese (mainland companies. It was found that industry type did not have a significant influence on IC reporting practices of Chinese firms; the larger firms generally reported more IC information than the relatively smaller firms; and there was a positive relationship between corporate performance and IC disclosure. This paper contributes to fairly limited literature regarding the associations between the level of IC disclosure and a variety of relevant impact factors, in particular in the Chinese mainland context. In addition, the findings of this research provide some references for policy-makers while developing an IC reporting framework applicable to the Chinese environment.

  16. Facile synthesis of cobalt-doped zinc oxide thin films for highly efficient visible light photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Altintas Yildirim, Ozlem, E-mail: ozlemaltintas@gmail.com [Department of Metallurgical and Materials Engineering, Selcuk University, Konya (Turkey); Arslan, Hanife; Sönmezoğlu, Savaş [Department of Metallurgical and Materials Engineering, Karamanoglu Mehmetbey University, Karaman (Turkey); Nanotechnology R& D Laboratory, Karamanoglu Mehmetbey University, Karaman (Turkey)

    2016-12-30

    Highlights: • Photocatalytically active Co-ZnO thin film was obtained by sol-gel method. • Co{sup 2+} doping narrowed the band gap of pure ZnO to an extent of 3.18 eV. • Co-ZnO was effective in MB degradation under visible light. • Optimum dopant content to show high performance was 3 at.%. - Abstract: Cobalt-doped zinc oxide (Co:ZnO) thin films with dopant contents ranging from 0 to 5 at.% were prepared using the sol–gel method, and their structural, morphological, optical, and photocatalytic properties were characterized. The effect of the dopant content on the photocatalytic properties of the films was investigated by examining the degradation behavior of methylene blue (MB) under visible light irradiation, and a detailed investigation of their photocatalytic activities was performed by determining the apparent quantum yields (AQYs). Co{sup 2+} ions were observed to be substitutionally incorporated into Zn{sup 2+} sites in the ZnO crystal, leading to lattice parameter constriction and band gap narrowing due to the photoinduced carriers produced under the visible light irradiation. Thus, the light absorption range of the Co:ZnO films was improved compared with that of the undoped ZnO film, and the Co:ZnO films exhibited highly efficient photocatalytic activity (∼92% decomposition of MB after 60-min visible light irradiation for the 3 at.% Co:ZnO film). The AQYs of the Co:ZnO films were greatly enhanced under visible light irradiation compared with that of the undoped ZnO thin film, demonstrating the effect of the Co doping level on the photocatalytic activity of the films.

  17. Highly hydrophilic ultra-high molecular weight polyethylene powder and film prepared by radiation grafting of acrylic acid

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Honglong [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Xu, Lu; Li, Rong [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Pang, Lijuan [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Hu, Jiangtao; Wang, Mouhua [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Wu, Guozhong, E-mail: wuguozhong@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2016-09-30

    Highlights: • Hydrophilic UHMWPE powder and film were obtained by γ-ray pre-irradiation grafting of AA. • A low concentration of AA solution was used for surface modification of UHMWPE. • A small grafting yield of AA sufficiently improved hydrophilicity of UHMWPE powder and film. - Abstract: The surface properties of ultra-high molecular weight polyethylene (UHMWPE) are very important for its use in engineering or composites. In this work, hydrophilic UHMWPE powder and film were prepared by γ-ray pre-irradiation grafting of acrylic acid (AA) and further neutralization with sodium hydroxide solution. Variations in the chemical structure, grafting yield and hydrophilicity were investigated and compared. FT-IR and XPS analysis results showed that AA was successfully grafted onto UHMWPE powder and film; the powder was more suitable for the grafting reaction in 1 wt% AA solution than the film. Given a dose of 300 kGy, the grafting yield of AA was ∼5.7% for the powder but ∼0.8% for the film under identical conditions. Radiation grafting of a small amount of AA significantly improved the hydrophilicity of UHMWPE. The water contact angle of the UHMWPE-g-PAA powder with a grafting yield of AA at ∼5.7% decreased from 110.2° to 68.2°. Moreover, the grafting powder (UHMWPE-g-PAA) exhibited good dispersion ability in water.

  18. Growth of high-quality large-area MgB2 thin films by reactive evaporation

    International Nuclear Information System (INIS)

    Moeckly, B H; Ruby, W S

    2006-01-01

    We report a new in situ reactive deposition thin film growth technique for the production of MgB 2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB 2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB 2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials up to 4 inch in diameter. This technique allows growth of double-sided, large-area films in the intermediate temperature range of 400-600 deg. C. These films are clean, well-connected, and consistently display T c values of 38-39 K with low resistivity and residual resistivity values. They are also robust and uncommonly stable upon exposure to atmosphere and water. (rapid communication)

  19. Uploading, Searching and Visualizing of Paleomagnetic and Rock Magnetic Data in the Online MagIC Database

    Science.gov (United States)

    Minnett, R.; Koppers, A.; Tauxe, L.; Constable, C.; Donadini, F.

    2007-12-01

    and takes only a few minutes to process tens of thousands of data records. The standardized MagIC template files are stored in the digital archives of EarthRef.org where they remain available for download by the public (in both text and Excel format). Finally, the contents of these template files are automatically parsed into the online relational database, making the data available for online searches in the paleomagnetic and rock magnetic search nodes. During the upload process the owner has the option of keeping the contribution private so it can be viewed in the context of other data sets and visualized using the suite of MagIC plotting tools. Alternatively, the new data can be password protected and shared with a group of users at the contributor's discretion. Once they are published and the owner is comfortable making the upload publicly accessible, the MagIC Editing Committee reviews the contribution for adherence to the MagIC data model and conventions to ensure a high level of data integrity.

  20. Psychosocial co-morbidities in Interstitial Cystitis/Bladder Pain syndrome (IC/BPS): A systematic review.

    Science.gov (United States)

    McKernan, Lindsey C; Walsh, Colin G; Reynolds, William S; Crofford, Leslie J; Dmochowski, Roger R; Williams, David A

    2018-03-01

    Psychosocial factors amplify symptoms of Interstitial Cystitis (IC/BPS). While psychosocial self-management is efficacious in other pain conditions, its impact on an IC/BPS population has rarely been studied. The objective of this review is to learn the prevalence and impact of psychosocial factors on IC/BPS, assess baseline psychosocial characteristics, and offer recommendations for assessment and treatment. Following PRISMA guidelines, primary information sources were PubMed including MEDLINE, Embase, CINAHL, and GoogleScholar. Inclusion criteria included: (i) a clearly defined cohort with IC/BPS or with Chronic Pelvic Pain Syndrome provided the IC/BPS cohort was delineated with quantitative results from the main cohort; (ii) all genders and regions; (iii) studies written in English from 1995 to April 14, 2017; (iv) quantitative report of psychosocial factors as outcome measures or at minimum as baseline characteristics. Thirty-four of an initial 642 articles were reviewed. Quantitative analyses demonstrate the magnitude of psychosocial difficulties in IC/BPS, which are worse than average on all measures, and fall into areas of clinical concern for 7 out of 10 measures. Meta-analyses shows mean Mental Component Score of the Short-Form 12 Health Survey (MCS) of 40.80 (SD 6.25, N = 2912), where <36 is consistent with severe psychological impairment. Averaged across studies, the population scored in the range seen in clinical depression (CES-D 19.89, SD 13.12, N = 564) and generalized anxiety disorder (HADS-A 8.15, SD 4.85, N = 465). The psychological impact of IC/BPS is pervasive and severe. Existing evidence of treatment is lacking and suggests self-management intervention may be helpful. © 2017 Wiley Periodicals, Inc.

  1. High-negative effective refractive index of silver nanoparticles system in nanocomposite films

    Science.gov (United States)

    Altunin, Konstantin K.; Gadomsky, Oleg N.

    2012-03-01

    We have proved on the basis of the experimental optical reflection and transmission spectra of the nanocomposite film of poly(methyl methacrylate) with silver nanoparticles that (PMMA + Ag) nanocomposite films have quasi-zero refractive indices in the optical wavelength range. We show that to achieve quasi-zero values of the complex index of refraction of composite materials is necessary to achieve high-negative effective refractive index in the system of spherical silver nanoparticles.

  2. Using high thermal stability flexible thin film thermoelectric generator at moderate temperature

    Science.gov (United States)

    Zheng, Zhuang-Hao; Luo, Jing-Ting; Chen, Tian-Bao; Zhang, Xiang-Hua; Liang, Guang-Xing; Fan, Ping

    2018-04-01

    Flexible thin film thermoelectric devices are extensively used in the microscale industry for powering wearable electronics. In this study, comprehensive optimization was conducted in materials and connection design for fabricating a high thermal stability flexible thin film thermoelectric generator. First, the thin films in the generator, including the electrodes, were prepared by magnetron sputtering deposition. The "NiCu-Cu-NiCu" multilayer electrode structure was applied to ensure the thermal stability of the device used at moderate temperature in an air atmosphere. A design with metal layer bonding and series accordant connection was then employed. The maximum efficiency of a single PN thermocouple generator is >11%, and the output power loss of the generator is <10% after integration.

  3. Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

    Directory of Open Access Journals (Sweden)

    Charith Jayanada Koswaththage

    2016-11-01

    Full Text Available InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.

  4. Efficient analysis for nonlinear microwave characteristics of high-power HTS thin film microstrip resonators

    Energy Technology Data Exchange (ETDEWEB)

    Kedar, Ashutosh [RADL Division, Electronics and Radar Development Establishment, C V Raman Nagar, Bangalore-560093 (India); Kataria, N D [National Physical Laboratory, New Delhi (India)

    2005-08-01

    This paper investigates the nonlinear effects of high-T{sub c} superconducting (HTS) thin film in high-power applications. A nonlinear model for complex surface impedance has been proposed for the efficient analysis of the nonlinearity of HTS thin films. Further, using the developed model, analysis of HTS-MSR has been done using the spectral domain method (SDM). The SDM formulation has been modified to account for finite conductivity and thickness of HTS films by incorporating a complex resistive boundary condition. The results have been validated with the experiments performed with microstrip resonators (MSRs) based on YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) thin films made by a laser ablation technique on LaAlO{sub 3} substrates, characterized for their characteristics, namely, resonant frequency and quality factor measured as a function of temperature and input RF power. A close agreement between the theoretical and measured results has been achieved validating the analysis.

  5. Efficient analysis for nonlinear microwave characteristics of high-power HTS thin film microstrip resonators

    International Nuclear Information System (INIS)

    Kedar, Ashutosh; Kataria, N D

    2005-01-01

    This paper investigates the nonlinear effects of high-T c superconducting (HTS) thin film in high-power applications. A nonlinear model for complex surface impedance has been proposed for the efficient analysis of the nonlinearity of HTS thin films. Further, using the developed model, analysis of HTS-MSR has been done using the spectral domain method (SDM). The SDM formulation has been modified to account for finite conductivity and thickness of HTS films by incorporating a complex resistive boundary condition. The results have been validated with the experiments performed with microstrip resonators (MSRs) based on YBa 2 Cu 3 O 7-x (YBCO) thin films made by a laser ablation technique on LaAlO 3 substrates, characterized for their characteristics, namely, resonant frequency and quality factor measured as a function of temperature and input RF power. A close agreement between the theoretical and measured results has been achieved validating the analysis

  6. High-performance ferroelectric memory based on phase-separated films of polymer blends

    KAUST Repository

    Khan, Yasser; Bhansali, Unnat Sampatraj; Almadhoun, Mahmoud N.; Odeh, Ihab N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. High-performance ferroelectric memory based on phase-separated films of polymer blends

    KAUST Repository

    Khan, Yasser

    2013-10-29

    High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Highly-enhanced reflow characteristics of sputter deposited Cu alloy thin films for large scale integrated interconnections

    Energy Technology Data Exchange (ETDEWEB)

    Onishi, Takashi [Advanced Technology Information Center, Shinko Research Co., Ltd., 2-7, 4-Chome, Iwaya-Nakamachi, Nada-ku, Kobe 657-0845 (Japan); Mizuno, Masao [Technical Development Group, Electronics Research Laboratory, Kobe Steel, Ltd., 5-5, Takatsukadai 1-chome, Nishi-ku, Kobe 651-2271 (Japan); Yoshikawa, Tetsuya; Munemasa, Jun [Machinery and Engineering Company, Kobe Steel, Ltd., 2-3-1, Shinhama, Arai-cho, Takasago 676-8670 (Japan); Mizuno, Masataka; Kihara, Teruo; Araki, Hideki [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita 565-0871 (Japan); Shirai, Yasuharu [Department of Materials Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)

    2011-08-01

    An attempt to improve the reflow characteristics of sputtered Cu films was made by alloying the Cu with various elements. We selected Y, Sb, Nd, Sm, Gd, Dy, In, Sn, Mg, and P for the alloys, and ''the elasto-plastic deformation behavior at high temperature'' and ''the filling level of Cu into via holes'' were estimated for Cu films containing each of these elements. From the results, it was found that adding a small amount of Sb or Dy to the sputtered Cu was remarkably effective in improve the reflow characteristics. The microstructure and imperfections in the Cu films before and after high-temperature high-pressure annealing were investigated by secondary ion micrographs and positron annihilation spectroscopy. The results imply that the embedding or deformation mechanism is different for the Cu-Sb alloy films compared to the Cu-Dy alloy films. We consider that the former is embedded by softening or deformation of the Cu matrix, which has a polycrystalline structure, and the latter is embedded by grain boundary sliding.

  9. Vacuum-integrated electrospray deposition for highly reliable polymer thin film.

    Science.gov (United States)

    Park, Soohyung; Lee, Younjoo; Yi, Yeonjin

    2012-10-01

    Vacuum electrospray deposition (ESD) equipment was designed to prepare polymer thin films. The polymer solution can be injected directly into vacuum system through multi-stage pumping line, so that the solvent residues and ambient contaminants are highly reduced. To test the performance of ESD system, we fabricated organic photovoltaic cells (OPVCs) by injecting polymer solution directly onto the substrate inside a high vacuum chamber. The OPVC fabricated has the structure of Al∕P3HT:PCBM∕PEDOT:PSS∕ITO and was optimized by varying the speed of solution injection and concentration of the solution. The power conversion efficiency (PCE) of the optimized OPVC is 3.14% under AM 1.5G irradiation without any buffer layer at the cathode side. To test the advantages of the vacuum ESD, we exposed the device to atmosphere between the deposition steps of the active layer and cathode. This showed that the PCE of the vacuum processed device is 24% higher than that of the air exposed device and confirms the advantages of the vacuum prepared polymer film for high performance devices.

  10. Mobility Optimization in LaxBa1-xSnO3 Thin Films Deposited via High Pressure Oxygen Sputtering

    Science.gov (United States)

    Postiglione, William Michael

    BaSnO3 (BSO) is one of the most promising semiconducting oxides currently being explored for use in future electronic applications. BSO possesses a unique combination of high room temperature mobility (even at very high carrier concentrations, > 1019 cm-3), wide band gap, and high temperature stability, making it a potentially useful material for myriad applications. Significant challenges remain however in optimizing the properties and processing of epitaxial BSO, a critical step towards industrial applications. In this study we investigate the viability of using high pressure oxygen sputtering to produce high mobility La-doped BSO thin films. In the first part of our investigation we synthesized, using solid state reaction, phase-pure stoichiometric polycrystalline 2% La-doped BaSnO 3 for use as a target material in our sputtering system. We verified the experimental bulk lattice constant, 4.117 A, to be in good agreement with literature values. Next, we set out to optimize the growth conditions for DC sputtering of La doped BaSnO3. We found that mobility for all our films increased monotonically with deposition temperature, suggesting the optimum temperature for deposition is > 900 °C and implicating a likely improvement in transport properties with post-growth thermal anneal. We then preformed systematic studies aimed at probing the effects of varying thickness and deposition rate to optimize the structural and electronic transport properties in unbuffered BSO films. In this report we demonstrate the ability to grow 2% La BSO thin films with an effective dopant activation of essentially 100%. Our films showed fully relaxed (bulk), out-of-plane lattice parameter values when deposited on LaAlO3, MgO, and (LaAlO3)0.3(Sr2 TaAlO6)0.7 substrates, and slightly expanded out-of-plane lattice parameters for films deposited on SrTiO3, GdScO3, and PrScO3 substrates. The surface roughness's of our films were measured via AFM, and determined to be on the nm scale or better

  11. Retardation the dewetting dynamics of ultrathin polystyrene films using highly branched aromatic molecules as additives

    International Nuclear Information System (INIS)

    Pangpaiboon, Nampueng; Traiphol, Nisanart; Promarak, Vinich; Traiphol, Rakchart

    2013-01-01

    This study introduces a new class of materials as a dewetting inhibitor for polystyrene (PS) ultrathin films. Two types of highly branched aromatic (HBA) molecules are added into PS films with thicknesses of 7 nm and 23 nm. Their concentrations range from 0.75 to 5 wt.%. The films are annealed in vacuum oven at elevated temperatures to accelerate dewetting process. Evolution of the film morphologies is followed by utilizing atomic force microscopy and optical microscopy. Contact angle measurements are used to evaluate interfacial interactions in each system. Dewetting area as a function of annealing time and HBA concentration are calculated. We have found that the presence of only 0.5 wt.% HBA can suppress the dewetting dynamics of PS films. Increasing the HBA concentration from 0.5 to 5 wt.% causes systematic decrease of the dewetting rate. In this system, the HBA molecules behave as physical cross-linking points for PS chains, which lead to the improvement of film stability. The efficiency of HBA as a dewetting inhibitor varies with molecular weight of PS while the change of HBA structure hardly affects the dewetting behaviors. - Highlights: • New method for improving stability of polystyrene (PS) thin filmsHighly branched aromatic molecules (HBA) are used to suppress the dewetting. • Thermal stability of blended PS/HBA films greatly improves. • The effectiveness of HBA varies with molecular weight of PS. • Important results for designing materials in coating application

  12. Retardation the dewetting dynamics of ultrathin polystyrene films using highly branched aromatic molecules as additives

    Energy Technology Data Exchange (ETDEWEB)

    Pangpaiboon, Nampueng [Research Unit of Advanced Ceramics, Department of Materials Science, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Traiphol, Nisanart, E-mail: Nisanart.T@chula.ac.th [Research Unit of Advanced Ceramics, Department of Materials Science, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Promarak, Vinich [School of Chemistry and Center of Excellence for Innovation in Chemistry, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Traiphol, Rakchart, E-mail: Rakchartt@nu.ac.th [Laboratory of Advanced Polymers and Nanomaterials, Department of Chemistry and Center of Excellence for Innovation in Chemistry, Faculty of Science, Naresuan University, Phitsanulok 65000 (Thailand); NANOTEC-MU Excellence Center on Intelligent Materials and Systems, Faculty of Science, Rama 6 Road, Ratchathewi, Bangkok 10400 (Thailand)

    2013-12-02

    This study introduces a new class of materials as a dewetting inhibitor for polystyrene (PS) ultrathin films. Two types of highly branched aromatic (HBA) molecules are added into PS films with thicknesses of 7 nm and 23 nm. Their concentrations range from 0.75 to 5 wt.%. The films are annealed in vacuum oven at elevated temperatures to accelerate dewetting process. Evolution of the film morphologies is followed by utilizing atomic force microscopy and optical microscopy. Contact angle measurements are used to evaluate interfacial interactions in each system. Dewetting area as a function of annealing time and HBA concentration are calculated. We have found that the presence of only 0.5 wt.% HBA can suppress the dewetting dynamics of PS films. Increasing the HBA concentration from 0.5 to 5 wt.% causes systematic decrease of the dewetting rate. In this system, the HBA molecules behave as physical cross-linking points for PS chains, which lead to the improvement of film stability. The efficiency of HBA as a dewetting inhibitor varies with molecular weight of PS while the change of HBA structure hardly affects the dewetting behaviors. - Highlights: • New method for improving stability of polystyrene (PS) thin filmsHighly branched aromatic molecules (HBA) are used to suppress the dewetting. • Thermal stability of blended PS/HBA films greatly improves. • The effectiveness of HBA varies with molecular weight of PS. • Important results for designing materials in coating application.

  13. Ultrasoft and High Magnetic Moment CoFe Films Directly Electrodeposited from a B-Reducer Contained Solution

    Directory of Open Access Journals (Sweden)

    Baoyu Zong

    2008-01-01

    Full Text Available A methodology to fabricate ultrasoft CoFe nano-/microfilms directly via electrodeposition from a semineutral iron sulfate solution is demonstrated. Using boron-reducer as the additive, the CoFe films become very soft with high magnetic moment. Typically, the film coercivity in the easy and hard axes is 6.5 and 2.5 Oersted, respectively, with a saturation polarization up to an average of 2.45 Tesla. Despite the softness, these shining and smooth films still display a high-anisotropic field of ~45 Oersted with permeability up to 104. This kind of films can potentially be used in current and future magnetic recording systems as well as microelectronic and biotechnological devices.

  14. High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

    KAUST Repository

    Nayak, Pradipta K.

    2012-05-16

    Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

  15. High-speed deposition of protective films of aluminium oxide by the method of reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Bugaev, S.P.; Zakhrov, A.N.; Ladyzhenskii, O.P.; Sochugov, M.S.

    2001-01-01

    The high optical characteristics of aluminium films made them attractive for different functional and decorative applications. It is well-known that the corrosion resistance of alloying is determined by the presence of the oxide film on its surface, but on the aluminium films, deposited by vacuum methods, the resistance is extremely low resulting in the relatively rapid failure of the coating. At present, there is a large number of methods of depositing the films of aluminium oxide. In most cases, it is recommended to use reactive magnetron sputtering of an aluminium target in a magnetron spraying system (MSS) using direct current, on dispersion of the target of aluminium oxide in a high-frequency MSS

  16. Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

    Science.gov (United States)

    Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

    2017-11-01

    Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Bibliography of high-T/sub c/ superconducting films

    International Nuclear Information System (INIS)

    Talvacchio, J.

    1989-01-01

    This document represents an effort to make bibliographic information on high-T/sub c/ superconductor films available to those who cannot access the on-line database at the Westinghouse R and D Center. The database contains a growing list of references -- approaching 5000 -- each of which is identified by a set of two-letter keywords. The database is used the same way as as INSPEC's, but its fixed set of standard keywords enables the user to obtain a complete list of references on keyworded topics. Since a single keyword (or search term) such as ''sputtering'' creates a bibliography that is too long for practical use, the database is used most effectively by combining a series of keywords using Boolean algebra to identify a handful of relevant references. The structure of this document is intended to present the subset of papers concerning high-T/sub c/ films (725 papers) in a compact format as a substitute for on-line searches. Rather than listing separate bibliographies for each of the 185 keywords, a single list of all the references is contained in Section 6, and indices based on the keywords are contained in Sections 3--5. This report is a true bibliography and does not contain any informative text. 725 refs

  18. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Science.gov (United States)

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  19. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Directory of Open Access Journals (Sweden)

    Chao-Ming Hsu

    2015-05-01

    Full Text Available High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  20. High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

    Science.gov (United States)

    Rajanikant, Ray Jayminkumar

    The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a

  1. An Ultra-High Element Density pMUT Array with Low Crosstalk for 3-D Medical Imaging

    Directory of Open Access Journals (Sweden)

    Tian-Ling Ren

    2013-07-01

    Full Text Available A ~1 MHz piezoelectric micromachined ultrasonic transducer (pMUT array with ultra-high element density and low crosstalk is proposed for the first time. This novel pMUT array is based on a nano-layer spin-coating lead zirconium titanium film technique and can be fabricated with high element density using a relatively simple process. Accordingly, key fabrication processes such as thick piezoelectric film deposition, low-stress Si-SOI bonding and bulk silicon removal have been successfully developed. The novel fine-pitch 6 × 6 pMUT arrays can all work at the desired frequency (~1 MHz with good uniformity, high performance and potential IC integration compatibility. The minimum interspace is ~20 μm, the smallest that has ever been achieved to the best of our knowledge. These arrays can be potentially used to steer ultrasound beams and implement high quality 3-D medical imaging applications.

  2. Raman scattering diagnostics of YBa2Cu3Ox high temperature superconducting films

    International Nuclear Information System (INIS)

    Bagratashvili, V.N.; Burimov, V.N.; Denisov, V.N.

    1988-01-01

    Superconducting YBa 2 Cu 3 O x films produced by laser spraying of ceramic material are investigated by light Raman scattering (LCS). It is shown that using LCS it is possible to obtain data on phase composition and prevailing film orientation and to find optical conditions for their synthesis. The LCS method feature consists in a possibility of non-destructive remote control and high space resolution (several microns). Experimental results have shown that the best parameters (the highest T c and the narrowest Δ T c interval) are typical of films with prevailing orientation of 0 xy crystallite plane parallel to the surface

  3. Highly -oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Reinig, P.; Selle, B.; Fenske, F.; Fuhs, W.; Alex, V.; Birkholz, M.

    2002-01-01

    Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 deg. C at high deposition rate (>100 nm/min) by pulsed dc magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency. The quantitative evaluation reveals that over 90% of the grains are oriented. The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film

  4. High-resolution ellipsometric study of an n-alkane film, dotriacontane, adsorbed on a SiO2 surface

    DEFF Research Database (Denmark)

    Volkmann, U.G.; Pino, M.; Altamirano, L.A.

    2002-01-01

    -crystal substrates. Our results suggest a model of a solid dotriacontane film that has a phase closest to the SiO2 surface in which the long-axis of the molecules is oriented parallel to the interface. Above this "parallel film" phase, a solid monolayer adsorbs in which the molecules are oriented perpendicular...... at higher coverages. In addition, we have performed high-resolution ellipsometry and stray-light measurements on dotriacontane films deposited from solution onto highly oriented pyrolytic graphite substrates. After film deposition, these substrates proved to be less stable in air than SiO2....

  5. Structure and superconducting properties of Nb-Zr alloy films made by a high-rate sputtering

    International Nuclear Information System (INIS)

    Sekine, Hisashi; Inoue, Kiyoshi; Tachikawa, Kyoji

    1978-01-01

    Superconducting Nb-Zr alloy films have been prepared by a continuous high-rate sputtering on tantalum substrates. A deposition rate of 330 nm/min has been attained. The compositional profile in the Nb-Zr film is quite uniform and the film has nearly the same composition as that of the target. The films deposited in a pure argon atmosphere show a columnar structure grown perpendicular to the substrate. The grain size strongly depends on the substrate temperature. The phase transformations in the Nb-Zr film become more apparent and the structure becomes closer to the equilibrium state as the film is deposited in higher atmosphere pressures and/or at lower target voltages. The superconducting transition temperature T sub(c) of the films is about the same as that of bulk samples. The dependence of T sub(c) on the substrate temperature is explainable on the phase transformations in the film. Critical current density J sub(c) and its anisotropy is closely related to the grain structure of the film. Grain boundaries seem to act as the most predominant flux pinning centers in the films. Effects of oxygen in the sputtering atmosphere on the structure and superconducting properties of the Nb-Zr films have been also investigated. Oxygen significantly decreases the grain size of the film. Oxygen increases J sub(c) but decreases T sub(c) of the film. (auth.)

  6. Computing fundamentals IC3 edition

    CERN Document Server

    Wempen, Faithe

    2014-01-01

    Kick start your journey into computing and prepare for your IC3 certification With this essential course book you'll be sending e-mails, surfing the web and understanding the basics of computing in no time. Written by Faithe Wempen, a Microsoft Office Master Instructor and author of more than 120 books, this complete guide to the basics has been tailored to provide comprehensive instruction on the full range of entry-level computing skills. It is a must for students looking to move into almost any profession, as entry-level computing courses have become a compulsory requirement in the modern w

  7. A new dyed poly (vinyl butyral) film for high-dose applications

    International Nuclear Information System (INIS)

    Eid, S.A.; Beshir, W.B.; Ebraheem, S.

    2006-01-01

    The polymer films under investigation are comprising a mixture of 2 dyes, namely, 2,6-dichlorophenol indophenol sodium salt (DCP), and bromo cresol green (BCG) indicator in presence of different concentrations of chloral hydrate. The color of this film changes from the blue to purple and finally to yellow, the bleaching reaction for DCP takes place in the beginning, giving the tinge of purple color, followed by the transformation of BCG to its acidic form due to the presence of chloral hydrate. The response of these films is affected by the change in chloral hydrate concentration and also the ratio of the 2 combined dyes. Accordingly, these films could be used as dosimeter in two steps color change indicators, in the dose range from 0.2 to 6 kGy. To examine their suitability for eventual application in different food radiation processing, the dosimetric parameters, e.g. dose response, effect of relative humidity during irradiation on response as well as pre-and post-irradiation stability of these film are investigated. Using the phenomenon of HCl generation from PVC under irradiation, ph-indicating dyes have been added to PVC. A chlorine-containing polymer is not necessary for this reaction to occur. A similar color change can be produced if chloro alkanes are present in the dye-containing matrix (Whittaker, 1990). Ueno (1988) developed a radiation dosimeter from acidity indicators by coating a high molecular weight polymer support (e.g. polyester film) with a composition containing a halogen-containing polymer (e.g. PVC), a pigment which changes color with the change of ph and a basic material (e.g. KOH in EtOH). For routine dose monitoring in radiation processing, the polymeric dyed flexible films are most commonly used as dosimeters and indicators for both electron beams and gamma rays (Ebraheem et al., 1999 and McLaughlin et al

  8. A novel prototyping method for die-level monolithic integration of MEMS above-IC

    International Nuclear Information System (INIS)

    Cicek, Paul-Vahe; Zhang, Qing; Saha, Tanmoy; Mahdavi, Sareh; Allidina, Karim; Gamal, Mourad El; Nabki, Frederic

    2013-01-01

    This work presents a convenient and versatile prototyping method for integrating surface-micromachined microelectromechanical systems (MEMS) directly above IC electronics, at the die level. Such localized implementation helps reduce development costs associated with the acquisition of full-sized semiconductor wafers. To demonstrate the validity of this method, variants of an IC-compatible surface-micromachining MEMS process are used to build different MEMS devices above a commercial transimpedance amplifier chip. Subsequent functional assessments for both the electronics and the MEMS indicate that the integration is successful, validating the prototyping methodology presented in this work, as well as the suitability of the selected MEMS technology for above-IC integration. (paper)

  9. High Precision Metal Thin Film Liftoff Technique

    Science.gov (United States)

    Brown, Ari D. (Inventor); Patel, Amil A. (Inventor)

    2015-01-01

    A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.

  10. Fast Batch Production of High-Quality Graphene Films in a Sealed Thermal Molecular Movement System.

    Science.gov (United States)

    Xu, Jianbao; Hu, Junxiong; Li, Qi; Wang, Rubing; Li, Weiwei; Guo, Yufen; Zhu, Yongbo; Liu, Fengkui; Ullah, Zaka; Dong, Guocai; Zeng, Zhongming; Liu, Liwei

    2017-07-01

    Chemical vapor deposition (CVD) growth of high-quality graphene has emerged as the most promising technique in terms of its integrated manufacturing. However, there lacks a controllable growth method for producing high-quality and a large-quantity graphene films, simultaneously, at a fast growth rate, regardless of roll-to-roll (R2R) or batch-to-batch (B2B) methods. Here, a stationary-atmospheric-pressure CVD (SAPCVD) system based on thermal molecular movement, which enables fast B2B growth of continuous and uniform graphene films on tens of stacked Cu(111) foils, with a growth rate of 1.5 µm s -1 , is demonstrated. The monolayer graphene of batch production is found to nucleate from arrays of well-aligned domains, and the films possess few defects and exhibit high carrier mobility up to 6944 cm 2 V -1 s -1 at room temperature. The results indicate that the SAPCVD system combined with single-domain Cu(111) substrates makes it possible to realize fast batch-growth of high-quality graphene films, which opens up enormous opportunities to use this unique 2D material for industrial device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Periods and light curves of 16 Cepheid variables in IC 1613 not completed by Baade

    International Nuclear Information System (INIS)

    Carlson, G.; Sandage, A.

    1990-01-01

    New periods and light curves are presented for 16 of the faintest Cepheids in IC 1613 which had not been finished by Baade. Magnitudes have been reduced to Freedman's new photometric scale. The P-L relation is extended to periods of 2 days using these new data. Comparison of the total Cepheid data now available in IC 1613 with the data in LMC shows no significant slope difference in the two P-L relations for periods of less than 10 days despite the lower metallicity of the young stars in IC 1613. Fifty new faint Cepheid candidates have been found in IC 1613 by blinking plates not used for this purpose by Baade. Most of these stars will have probable periods of less than 2 days, which will eventually permit an extension of the P-L relation in IC 1613 to fainter magnitudes when the photometry and period determinations are completed. 18 refs

  12. Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens

    International Nuclear Information System (INIS)

    Madaria, Anuj R; Kumar, Akshay; Zhou Chongwu

    2011-01-01

    The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σ DC /σ Op , for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, Φ TE . Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.

  13. Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens.

    Science.gov (United States)

    Madaria, Anuj R; Kumar, Akshay; Zhou, Chongwu

    2011-06-17

    The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σ(DC)/σ(Op), for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, Φ(TE). Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.

  14. Resputtering-induced chemical inhomogeneity during the growth of high Tc superconductor thin films

    International Nuclear Information System (INIS)

    Ismat Shah, S.

    1991-01-01

    High T c films belonging to Y-Ba-Cu-O, Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O systems have been fabricated by reactive sputtering of single targets in a planar magnetron and Ar+O 2 sputtering atmosphere. Although it was possible to deposit films of correct composition, resputtering related composition variation was a problem. The key to obtaining correct chemistry was a proper control of the deposition parameters. The pressure and oxygen content of the sputtering gas were found to be the most critical parameters. Results of the variation of these parameters on the cation chemistry are presented in this paper. Results from Monte-Carlo simulation of the sputtering process are also presented showing that low pressure and oxygen content of the sputtering gas result in a higher yield of energetic reflected neutrals which can cause compositional variation in the film mainly due to preferential sputtering of the growing film. The effect was particularly noticeable directly underneath the target. The energetic particle bombardment can be controlled by using moderately high pressures and low oxygen concentration in the gas. (author). 11 refs., 7 figs

  15. Increase in complement iC3b is associated with anti-inflammatory cytokine expression during late pregnancy in mice.

    Directory of Open Access Journals (Sweden)

    Keigo Nakamura

    Full Text Available Immunological tolerance between fetal allograft and mother is crucial for pregnancy establishment and maintenance; however, these mechanisms particularly those during the latter part of pregnancy have not been definitively elucidated. The aim of this study was to examine the presence and potential function of innate immunity characteristic to the middle to late pregnancy. We first characterized up-regulated proteins in decidua from day 11 pregnant (P11 mice using 2D-PAGE, followed by MALDI-TOF/MS analysis. These analyses identified increased complement component 3 (C3 and its derivatives in P11 decidua. We then found that in the decidual tissues, C3 mRNA increased on P15 and remained high on P19. C3 is converted to C3b and then iC3b by complement component factor I (Cfi and complement receptor 1-like protein (Crry, both of which were present in P19 placentas. In addition, iC3b proteins and its receptor CR3 (Cd11b/Cd18 in decidual and placental tissues increased toward the latter phase of pregnancy. Moreover, CR3 subunit CD11b protein was predominantly localized to spongiotrophoblast layer in the P19 placenta. Because iC3b is known to induce anti-inflammatory cytokine production, the analysis was extended to examine changes in pro- and anti-inflammatory cytokines, Il12, Il10, and Tgfb1. Il12 expression decreased in P15 and P19 placenta, while high mRNA expression of Il10 and Tgfb1 was found in P19 placental tissues. Furthermore, placental Il10 and Tgfb1 mRNAs were down-regulated when pregnant mice were treated with an anti-C3 antibody, detecting C3, C3b and iC3b. These results indicated that C3 derivatives, in particular, iC3b and its receptor CR3 were up-regulated at the fetal-maternal interface, and suggest that iC3b may regulate the placental expression of anti-inflammatory cytokines, IL10 and TGFB1, during the latter phase of pregnancy.

  16. PREFACE: 2nd International Conference on Mathematical Modeling in Physical Sciences 2013 (IC-MSQUARE 2013)

    Science.gov (United States)

    2014-03-01

    The second International Conference on Mathematical Modeling in Physical Sciences (IC-MSQUARE) took place at Prague, Czech Republic, from Sunday 1 September to Thursday 5 September 2013. The Conference was attended by more than 280 participants and hosted about 400 oral, poster, and virtual presentations while counted more than 600 pre-registered authors. The second IC-MSQUARE consisted of different and diverging workshops and thus covered various research fields where Mathematical Modeling is used, such as Theoretical/Mathematical Physics, Neutrino Physics, Non-Integrable Systems, Dynamical Systems, Computational Nanoscience, Biological Physics, Computational Biomechanics, Complex Networks, Stochastic Modeling, Fractional Statistics, DNA Dynamics, Macroeconomics. The scientific program was rather heavy since after the Keynote and Invited Talks in the morning, three parallel sessions were running every day. However, according to all attendees, the program was excellent with high level of talks and the scientific environment was fruitful, thus all attendees had a creative time. We would like to thank the Keynote Speaker and the Invited Speakers for their significant contribution to IC-MSQUARE. We also would like to thank the Members of the International Advisory and Scientific Committees as well as the Members of the Organizing Committee. Further information on the editors, speakers and committees is available in the attached pdf.

  17. Effects of high voltage pulse trimming on structural properties of thick-film resistors

    Directory of Open Access Journals (Sweden)

    Stanimirović Zdravko

    2017-01-01

    Full Text Available Nowadays, compact and reliable electronic devices including up-to-date ceramic micro-electro-mechanical systems require thick-film resistors with significantly reduced dimensions and stable and precise resistance values. For that reason, instead of standard laser trimming method, high voltage pulse trimming of thick-film resistors is being introduced. This method allows controlled and reliable resistance adjustment regardless of resistor position or dimensions and without the presence of cuts. However, it causes irreversible structural changes in the pseudorandom network formed during sintering causing the changes in conducting mechanisms. In this paper results of the experimental investigation of high voltage pulse trimming of thick-film resistors are presented. Obtained results are analyzed and correlations between resistance and low-frequency noise changes and changes in conducting mechanisms in resistors due to high voltage pulse trimming are observed. Sources of measured fluctuations are identified and it is shown that this type of trimming is a valid alternative trimming method to the dominant laser trimming. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III44003 and III45007

  18. Watching AGN feedback at its birth: HST observations of nascent outflow host IC860

    Science.gov (United States)

    Alatalo, Katherine

    2016-10-01

    IC860 is a nearby IR-luminous early-type spiral with a unique set of properties: it is a shocked, poststarburst galaxy that hosts an AGN-driven neutral wind and a compact core of molecular gas. IC860 can serve as a rosetta stone for the early stages of triggering AGN feedback. We propose to use WFC3 on HST to obtain NUV, optical and near-IR imaging of IC860. We will create a spatially-resolved history of star formation quenching through SED-fitting of 7 requested broadband filters, and compare the spatially resolved star formation histories to in different positions within the underlying stellar features (such as spiral structure) that might define a narrative of how star formation is quenching in IC860. These observations will also resolve the super-star cluster sites to trace the most recent star formation. Finally, these observations will trace the mass of the outflow by building an absorption map of the dust. IC860 presents a unique opportunity to study a galaxy at an early stage of transitioning from blue spiral to red early-type galaxy, that also hosts an AGN-driven neutral wind and a compact, turbulent molecular gas core.

  19. High Performance Infrared Plasmonic Metamaterial Absorbers and Their Applications to Thin-film Sensing

    KAUST Repository

    Yue, Weisheng

    2016-04-07

    Plasmonic metamaterial absorbers (PMAs) have attracted considerable attention for developing various sensing devices. In this work, we design, fabricate and characterize PMAs of different geometrical shapes operating in mid-infrared frequencies, and explore the applications of the PMAs as sensor for thin films. The PMAs, consisting of metal-insulator-metal stacks with patterned gold nanostructured surfaces (resonators), demonstrated high absorption efficiency (87 to 98 %) of electromagnetic waves in the infrared regime. The position and efficiency of resonance absorption are dependent on the shape of the resonators. Furthermore, the resonance wavelength of PMAs was sensitive to the thin film coated on the surface of the PMAs, which was tested using aluminum oxide (Al2O3) as the film. With increase of the Al2O3 thickness, the position of resonance absorption shifted to longer wavelengths. The dependence of the resonant wavelength on thin film thickness makes PMAs a suitable candidate as a sensor for thin films. Using this sensing strategy, PMAs have potential as a new method for thin film detection and in situ monitoring of surface reactions. © 2016 Springer Science+Business Media New York

  20. High Performance Infrared Plasmonic Metamaterial Absorbers and Their Applications to Thin-film Sensing

    KAUST Repository

    Yue, Weisheng; Wang, Zhihong; Yang, Yang; Han, Jiaguang; Li, Jingqi; Guo, Zaibing; Tan, Hua; Zhang, Xixiang

    2016-01-01

    Plasmonic metamaterial absorbers (PMAs) have attracted considerable attention for developing various sensing devices. In this work, we design, fabricate and characterize PMAs of different geometrical shapes operating in mid-infrared frequencies, and explore the applications of the PMAs as sensor for thin films. The PMAs, consisting of metal-insulator-metal stacks with patterned gold nanostructured surfaces (resonators), demonstrated high absorption efficiency (87 to 98 %) of electromagnetic waves in the infrared regime. The position and efficiency of resonance absorption are dependent on the shape of the resonators. Furthermore, the resonance wavelength of PMAs was sensitive to the thin film coated on the surface of the PMAs, which was tested using aluminum oxide (Al2O3) as the film. With increase of the Al2O3 thickness, the position of resonance absorption shifted to longer wavelengths. The dependence of the resonant wavelength on thin film thickness makes PMAs a suitable candidate as a sensor for thin films. Using this sensing strategy, PMAs have potential as a new method for thin film detection and in situ monitoring of surface reactions. © 2016 Springer Science+Business Media New York