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Sample records for high ic film

  1. Droplet-Wall/Film Impact in IC Engine Applications

    Science.gov (United States)

    2017-08-14

    Report: Droplet-Wall/ Film Impact in IC Engine Applications (ARO Topic 1.4.1 under ARO’s Dr. Ralph A. Anthenien) The views, opinions and/or findings...Participants: RPPR Final Report as of 12-Oct-2017 Agreement Number: W911NF-16-1-0449 Organization: Princeton University Title: Droplet-Wall/ Film Impact...droplets impacting a wet surface under various film thickness, which plays a critical role in controlling the efficiency of applications such as those

  2. High energy ion implantation for IC processing

    International Nuclear Information System (INIS)

    Oosterhoff, S.

    1986-01-01

    In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 10 13 /cm 2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

  3. Performance of Naturally Aspirating IC Engines Operating at High ...

    African Journals Online (AJOL)

    The loss of power and the increase of fuel consumption of naturally aspirating IC engines operating with low atmospheric pressure at high altitude as well as changes in the mixture quality with non adapting mixture formation systems are principally known. Other effects like the additional advance of ignition timing in petrol ...

  4. High Ic, YBa2Cu3O7-x films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO3 buffers

    International Nuclear Information System (INIS)

    Kursumovic, A; Durrell, J H; Harrington, S; Wimbush, S; MacManus-Driscoll, J L; Maiorov, B; Zhou, H; Stan, L; Holesinger, T G; Wang, H

    2009-01-01

    YBa 2 Cu 3 O 7-x (YBCO) thick films were grown by hybrid liquid phase epitaxy (HLPE) on (001) SrTiO 3 (STO) substrates. In the presence of a 100 nm thick, 5 mol% Au-doped STO buffer, self-field critical current densities, J c sf , at 77 K of ∼2.4 MA cm -2 and critical currents, I c sf , up to 700 A (cm-width) -1 were achieved. The J c value is virtually independent of thickness and the growth rates are very high (∼1 μm min -1 ). From transmission electron microscopy (TEM), Y 2 O 3 nanocloud extended defects (∼100 nm in size) were identified as the pinning defects in the films. Enhanced random pinning was induced by the presence of Au in the buffer.

  5. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    International Nuclear Information System (INIS)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu; Gong, Lijun; He, Wei

    2017-01-01

    Highlights: • Air atmosphere plasmacould generatehydrophilic groups of photo-resistive film. • Better wettability of photo-resistive filmled tohigher plating uniformity of copper pillars. • New flow isreduced cost, simplified process and elevated productivity. - Abstract: The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O_2−CF_4 low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of C−O, O−C=O, C=O and −NO_2 by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  6. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gong, Lijun [Research and Development Department, Guangzhou Fastprint Circuit Tech Co., Ltd., Guangzhou 510663 (China); He, Wei, E-mail: heweiz@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Research and Development Department, Guangdong Guanghua Sci-Tech Co., Ltd., Shantou 515000 (China)

    2017-07-31

    Highlights: • Air atmosphere plasmacould generatehydrophilic groups of photo-resistive film. • Better wettability of photo-resistive filmled tohigher plating uniformity of copper pillars. • New flow isreduced cost, simplified process and elevated productivity. - Abstract: The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O{sub 2}−CF{sub 4} low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of C−O, O−C=O, C=O and −NO{sub 2} by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  7. Improving wettability of photo-resistive film surface with plasma surface modification for coplanar copper pillar plating of IC substrates

    Science.gov (United States)

    Xiang, Jing; Wang, Chong; Chen, Yuanming; Wang, Shouxu; Hong, Yan; Zhang, Huaiwu; Gong, Lijun; He, Wei

    2017-07-01

    The wettability of the photo-resistive film (PF) surfaces undergoing different pretreatments including the O2sbnd CF4 low-pressure plasma (OCLP) and air plasma (AP), is investigated by water contact angle measurement instrument (WCAMI) before the bottom-up copper pillar plating. Chemical groups analysis performed by attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectra (XPS) shows that after the OCLP and wash treatment, the wettability of PF surface is attenuated, because embedded fluorine and decreased oxygen content both enhance hydrophobicity. Compared with OCLP treatment, the PF surface treatment by non-toxic air plasma displays features of Csbnd O, Osbnd Cdbnd O, Cdbnd O and sbnd NO2 by AIR-FTIR and XPS, and a promoted wettability by WCAM. Under the identical electroplating condition, the surface with a better wettability allows electrolyte to spontaneously soak all the places of vias, resulting in improved copper pillar uniformity. Statistical analysis of metallographic data shows that more coplanar and flat copper pillars are achieved with the PF treatment of air plasma. Such modified copper-pillar-plating technology meets the requirement of accurate impedance, the high density interconnection for IC substrates.

  8. PTF 12gzk—A rapidly declining, high-velocity type Ic radio supernova

    Energy Technology Data Exchange (ETDEWEB)

    Horesh, Assaf; Kulkarni, Shrinivas R. [Cahill Center for Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Corsi, Alessandra [Department of Physics, The George Washington University, 725 21st Street, NW, Washington, DC 20052 (United States); Frail, Dale A. [National Radio Astronomy Observatory, P.O. Box 0, Socorro, NM 87801 (United States); Cenko, S. Bradley [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Ben-Ami, Sagi; Gal-Yam, Avishay; Yaron, Ofer; Arcavi, Iair; Ofek, Eran O. [Department of Particle Physics and Astrophysics, The Weizmann Institute of Science, Rehovot 76100 (Israel); Kasliwal, Mansi M. [Carnegie Institution for Science, Department of Terrestrial Magnetism, 5241 Broad Branch Road, Washington, DC 20008 (United States)

    2013-11-20

    Only a few cases of Type Ic supernovae (SNe) with high-velocity ejecta (≥0.2 c) have been discovered and studied. Here, we present our analysis of radio and X-ray observations of the Type Ic SN PTF 12gzk. The radio emission declined less than 10 days after explosion, suggesting SN ejecta expanding at high velocity (∼0.3 c). The radio data also indicate that the density of the circumstellar material (CSM) around the supernova is lower by a factor of ∼10 than the CSM around normal Type Ic SNe. PTF 12gzk may therefore be an intermediate event between a 'normal' SN Ic and a gamma-ray-burst-SN-like event. Our observations of this rapidly declining radio SN at a distance of 58 Mpc demonstrates the potential to detect many additional radio SNe, given the new capabilities of the Very Large Array (improved sensitivity and dynamic scheduling), which are currently missed, leading to a biased view of radio SNe Ic. Early optical discovery followed by rapid radio observations would provide a full description of the ejecta velocity distribution and CSM densities around stripped massive star explosions as well as strong clues about the nature of their progenitor stars.

  9. PTF 12gzk—A rapidly declining, high-velocity type Ic radio supernova

    International Nuclear Information System (INIS)

    Horesh, Assaf; Kulkarni, Shrinivas R.; Corsi, Alessandra; Frail, Dale A.; Cenko, S. Bradley; Ben-Ami, Sagi; Gal-Yam, Avishay; Yaron, Ofer; Arcavi, Iair; Ofek, Eran O.; Kasliwal, Mansi M.

    2013-01-01

    Only a few cases of Type Ic supernovae (SNe) with high-velocity ejecta (≥0.2 c) have been discovered and studied. Here, we present our analysis of radio and X-ray observations of the Type Ic SN PTF 12gzk. The radio emission declined less than 10 days after explosion, suggesting SN ejecta expanding at high velocity (∼0.3 c). The radio data also indicate that the density of the circumstellar material (CSM) around the supernova is lower by a factor of ∼10 than the CSM around normal Type Ic SNe. PTF 12gzk may therefore be an intermediate event between a 'normal' SN Ic and a gamma-ray-burst-SN-like event. Our observations of this rapidly declining radio SN at a distance of 58 Mpc demonstrates the potential to detect many additional radio SNe, given the new capabilities of the Very Large Array (improved sensitivity and dynamic scheduling), which are currently missed, leading to a biased view of radio SNe Ic. Early optical discovery followed by rapid radio observations would provide a full description of the ejecta velocity distribution and CSM densities around stripped massive star explosions as well as strong clues about the nature of their progenitor stars.

  10. Eddy current measurement of the thickness of top Cu film of the multilayer interconnects in the integrated circuit (IC) manufacturing process

    Science.gov (United States)

    Qu, Zilian; Meng, Yonggang; Zhao, Qian

    2015-03-01

    This paper proposes a new eddy current method, named equivalent unit method (EUM), for the thickness measurement of the top copper film of multilayer interconnects in the chemical mechanical polishing (CMP) process, which is an important step in the integrated circuit (IC) manufacturing. The influence of the underneath circuit layers on the eddy current is modeled and treated as an equivalent film thickness. By subtracting this equivalent film component, the accuracy of the thickness measurement of the top copper layer with an eddy current sensor is improved and the absolute error is 3 nm for sampler measurement.

  11. Design of a High Performance Green-Mode PWM Controller IC with Smart Sensing Protection Circuits

    Directory of Open Access Journals (Sweden)

    Shen-Li Chen

    2014-08-01

    Full Text Available A design of high performance green-mode pulse-width-modulation (PWM controller IC with smart sensing protection circuits for the application of lithium-ion battery charger (1.52 V ~ 7.5 V is investigated in this paper. The protection circuits architecture of this system mainly bases on the lithium battery function and does for the system design standard of control circuit. In this work, the PWM controller will be with an automatic load sensing and judges the system operated in the operating mode or in the standby mode. Therefore, it reduces system’s power dissipation effectively and achieves the saving power target. In the same time, many protection sensing circuits such as: (1 over current protection (OCP and under current protection (UCP, (2 over voltage protection (OVP and under voltage protection (UVP, (3 loading determintion and short circuit protection (SCP, (4 over temperature protection (OTP, (5 VDD surge-spiking protection are included. Then, it has the characteristics of an effective monitoring the output loading and the harm prevention as a battery charging. Eventually, this green-mode pulse-width-modulation (PWM controller IC will be that the operation voltage is 3.3 V, the operation frequency is 0.98 MHz, and the output current range is from 454 mA to 500 mA. Meanwhile, the output convert efficiency is range from 74.8 % to 91 %, the power dissipation efficiency in green-mode is 25 %, and the operation temperature range is between -20 0C ~ 114 0C.

  12. On the importance of specific heats as regards efficiency increases for highly dilute IC engines

    International Nuclear Information System (INIS)

    Caton, Jerald A.

    2014-01-01

    Highlights: • Importance of specific heats towards increasing engine efficiency was quantified. • Decreases of specific heats contribute 3.5–6.3% (abs) to the efficiency. • Dilute engines benefit from decreases of specific heats due to lower temperatures. - Abstract: Engineering and scientific efforts continue with the development of advanced, IC engines using highly dilute mixtures, and relatively high compression ratios. Such engines are known to provide opportunities for low emissions as well as high efficiencies. The main features of these engines include higher compression ratios, lean operation, use of EGR, and shorter burn durations. First, this study reviews the quantitative contributions of each of these features as determined by an engine cycle simulation. Second, this study provides the quantitative contributions to the increased efficiency in terms of fundamental thermodynamic considerations. An automotive engine operated at 2000 rpm was selected for this study. For the conditions examined, the net indicated thermal efficiency increased from 37.0% (conventional engine) to 53.9% (high efficiency engine) – for an incremental increase of 16.9% (absolute). The contribution of increases of the ratio of specific heats towards the final thermal efficiency is quantified. This aspect has been well known, but has not been quantified for actual engines. For the various conditions examined, 21–35% of the total efficiency improvement was estimated to be due to the increase of the ratio of specific heats

  13. Structural changes and intermolecular interactions of filled ice Ic structure for hydrogen hydrate under high pressure

    International Nuclear Information System (INIS)

    Machida, S; Hirai, H; Kawamura, T; Yamamoto, Y; Yagi, T

    2010-01-01

    High-pressure experiments of hydrogen hydrate were performed using a diamond anvil cell under conditions of 0.1-44.2 GPa and at room temperature. Also, high pressure Raman studies of solid hydrogen were performed in the pressure range of 0.1-43.7 GPa. X-ray diffractometry (XRD) for hydrogen hydrate revealed that a known high-pressure structure, filled ice Ic structure, of hydrogen hydrate transformed to a new high-pressure structure at approximately 35-40 GPa. A comparison of the Raman spectroscopy of a vibron for hydrogen molecules between hydrogen hydrate and solid hydrogen revealed that the extraction of hydrogen molecules from hydrogen hydrate occurred above 20 GPa. Also, the Raman spectra of a roton revealed that the rotation of hydrogen molecules in hydrogen hydrate was suppressed at around 20 GPa and that the rotation recovered under higher pressure. These results indicated that remarkable intermolecular interactions in hydrogen hydrate between neighboring hydrogen molecules and between guest hydrogen molecules and host water molecules might occur. These intermolecular interactions could produce the stability of hydrogen hydrate.

  14. Sliding Mode Pulsed Averaging IC Drivers for High Brightness Light Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Anatoly Shteynberg, PhD

    2006-08-17

    This project developed new Light Emitting Diode (LED) driver ICs associated with specific (uniquely operated) switching power supplies that optimize performance for High Brightness LEDs (HB-LEDs). The drivers utilize a digital control core with a newly developed nonlinear, hysteretic/sliding mode controller with mixed-signal processing. The drivers are flexible enough to allow both traditional microprocessor interface as well as other options such as “on the fly” adjustment of color and brightness. Some other unique features of the newly developed drivers include • AC Power Factor Correction; • High power efficiency; • Substantially fewer external components should be required, leading to substantial reduction of Bill of Materials (BOM). Thus, the LED drivers developed in this research : optimize LED performance by increasing power efficiency and power factor. Perhaps more remarkably, the LED drivers provide this improved performance at substantially reduced costs compared to the present LED power electronic driver circuits. Since one of the barriers to market penetration for HB-LEDs (in particular “white” light LEDs) is cost/lumen, this research makes important contributions in helping the advancement of SSL consumer acceptance and usage.

  15. High-precision analog circuit technology for power supply integrated circuits; Dengen IC yo koseido anarogu kairo gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Nakamori, A.; Suzuki, T.; Mizoe, K. [Fuji Electric Corporate Research and Development,Ltd., Kanagawa (Japan)

    2000-08-10

    With the recent rapid spread of portable electronic appliances, specification requirements such as compact power supply and long operation with batteries have become severer. Power supply ICs (integrated circuits) are required to reduce power consumption in the circuit and perform high-precision control. To meet these requirements, Fuji Electric develops high-precision CMOS (complementary metal-oxide semiconductor) analog technology. This paper describes three analog circuit technologies of a voltage reference, an operational amplifier and a comparator as circuit components particularly important for the precision of power supply ICs. (author)

  16. Silicon photonic IC embedded optical-PCB for high-speed interconnect application

    Science.gov (United States)

    Kallega, Rakshitha; Nambiar, Siddharth; Kumar, Abhai; Ranganath, Praveen; Selvaraja, Shankar Kumar

    2018-02-01

    Optical-Printed Circuit Board (PCB) is an emerging optical interconnect technology to bridge the gap between the board edge and the processing module. The technology so far has been used as a broadband transmitter using polymer waveguides in the PCB. In this paper, we report a Silicon Nitride based photonic IC embedded in the PCB along with the polymers as waveguides in the PCB. The motivation for such integration is to bring routing capability and to reduce the power loss due to broadcasting mode.

  17. Water and Time’s Illusion: Two Purāṇic Tales from Bertolucci’s Films

    Directory of Open Access Journals (Sweden)

    Alessandro Cimino

    2012-12-01

    Full Text Available In Bernanrdo Bertolucci’s film Prima della Rivoluzione (1964 is narrated an Indian tale about time’s flimsiness; in 2002 the same film-maker realized a short on the same theme, Histoire d’eaux, for the collective cine-production Ten Minutes Older: The Cello. Nobody has never observed that same tales very similar to Bertolucci’s one in the up-mentioned films are narrated also in two ancient Sanskrit works: the Brahmapurāṇa and the Varāhapurāṇa. The cited tale in Bertolucci’s two films should prove the fact that time is an illusion, a false perception. In the up-mentioned Sanskrit works this theme is more complex, it would demonstrate that not only time’s perception doesn’t exist, but also that every perception is flimsy including everyone’s perception of life. The theoretical constant between all these literary and cine narrations stays at the particular water’s symbology containing the emblem of the continuous and, at the same time, fixed becoming. This essay ought to analyse the narrative and ideological evolution of the Indian tale, the stylistic variations found among the individual claims of the story, both in the Sanskrit literature and in Bertolucci’s cine-production, as well as the intermedial translations from a code to another one.

  18. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

    Science.gov (United States)

    Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

    2017-04-25

    Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

  19. High Spatial Resolution X-Ray Spectroscopy of the IC 443 Pulsar Wind Nebula and Environs

    Science.gov (United States)

    Swartz, Douglas A.; Pavlov, George G.; Clarke, Tracy; Castelletti, Gabriela; Zavlin, Vyacheslav E.; Bucciantini, Niccolò; Karovska, Margarita; van der Horst, Alexander J.; Yukita, Mihoko; Weisskopf, Martin C.

    2015-07-01

    Deep Chandra ACIS observations of the region around the putative pulsar, CXOU J061705.3+222127, in the supernova remnant (SNR) IC 443 reveal an ˜5″ radius ring-like structure surrounding the pulsar and a jet-like feature oriented roughly north-south across the ring and through the pulsar's location at 06h17m5.ˢ200 + 22°21‧27.″52 (J2000.0 coordinates). The observations further confirm that (1) the spectrum and flux of the central object are consistent with a rotation-powered pulsar, (2) the non-thermal spectrum and morphology of the surrounding nebula are consistent with a pulsar wind, and (3) the spectrum at greater distances is consistent with thermal emission from the SNR. The cometary shape of the nebula, suggesting motion toward the southwest, appears to be subsonic: There is no evidence either spectrally or morphologically for a bow shock or contact discontinuity; the nearly circular ring is not distorted by motion through the ambient medium; and the shape near the apex of the nebula is narrow. Comparing this observation with previous observations of the same target, we set a 99% confidence upper limit to the proper motion of CXOU J061705.3+222127 to be less than 44 mas yr-1 (310 km s-1 for a distance of 1.5 kpc), with the best-fit (but not statistically significant) projected direction toward the west.

  20. High Spatial Resolution X-Ray Spectroscopy of the IC443 Pulsar Wind Nebula

    Science.gov (United States)

    Swartz, Douglas A.; Weisskopf, Martin C.; Bucciantini, Niccolo; Clarke, Tracy E.; Karovska, Margarita; Pavlov, George G.; van der Horst, Alexander; Yukita, Mihoko; Zavlin, Vyacheslav

    2014-08-01

    Deep Chandra ACIS observations of the region around the putative pulsar CXOU J061705.3+222127, in the supernova remnant IC443, reveal a ~5" radius ring-like morphology surrounding the pulsar and a jet-like structure oriented roughly north-south across the ring and through the pulsar's location. The observations further confirm that (1) the spectrum and flux of the central object are consistent with a rotation-powered pulsar, (2) the non-thermal spectrum and morphology of the surrounding nebula are consistent with a pulsar wind, and (3) the spectrum at greater distances is consistent with thermal emission from the supernova remnant. The cometary shape of the nebula, suggesting motion towards the southwest, appears to be subsonic: There is no evidence for a strong bow shock; and the ring is not distorted by motion through the ambient medium. Comparing this observation with historical observations of the same target we set a 99-% confidence upper limit to the proper motion of CXOU J061705.3+222127 to be less than 310 km/s, with the best-fit (but not statistically significant) direction toward the west.

  1. HIGH SPATIAL RESOLUTION X-RAY SPECTROSCOPY OF THE IC 443 PULSAR WIND NEBULA AND ENVIRONS

    International Nuclear Information System (INIS)

    Swartz, Douglas A.; Zavlin, Vyacheslav E.; Pavlov, George G.; Clarke, Tracy; Castelletti, Gabriela; Bucciantini, Niccolò; Karovska, Margarita; Horst, Alexander J. van der; Yukita, Mihoko; Weisskopf, Martin C.

    2015-01-01

    Deep Chandra ACIS observations of the region around the putative pulsar, CXOU J061705.3+222127, in the supernova remnant (SNR) IC 443 reveal an ∼5″ radius ring-like structure surrounding the pulsar and a jet-like feature oriented roughly north–south across the ring and through the pulsar's location at 06 h 17 m 5. s 200 + 22°21′27.″52 (J2000.0 coordinates). The observations further confirm that (1) the spectrum and flux of the central object are consistent with a rotation-powered pulsar, (2) the non-thermal spectrum and morphology of the surrounding nebula are consistent with a pulsar wind, and (3) the spectrum at greater distances is consistent with thermal emission from the SNR. The cometary shape of the nebula, suggesting motion toward the southwest, appears to be subsonic: There is no evidence either spectrally or morphologically for a bow shock or contact discontinuity; the nearly circular ring is not distorted by motion through the ambient medium; and the shape near the apex of the nebula is narrow. Comparing this observation with previous observations of the same target, we set a 99% confidence upper limit to the proper motion of CXOU J061705.3+222127 to be less than 44 mas yr −1 (310 km s −1 for a distance of 1.5 kpc), with the best-fit (but not statistically significant) projected direction toward the west

  2. HIGH SPATIAL RESOLUTION X-RAY SPECTROSCOPY OF THE IC 443 PULSAR WIND NEBULA AND ENVIRONS

    Energy Technology Data Exchange (ETDEWEB)

    Swartz, Douglas A.; Zavlin, Vyacheslav E. [USRA, Astrophysics Office, NASA Marshall Space Flight Center, ZP12, Huntsville, AL 35812 (United States); Pavlov, George G. [Department of Astronomy and Astrophysics, Pennsylvania State University, 525 Davey Lab, University Park, PA 16802 (United States); Clarke, Tracy [Remote Sensing Division, Code 7213, Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, DC (United States); Castelletti, Gabriela [Instituto de Astronomía y Física del Espacio (IAFE, CONICET-UBA), CC67, Suc. 28, 1428, Buenos Aires (Argentina); Bucciantini, Niccolò [INAF—Osservatorio Astrofisico di Arcetri, L. go E. Fermi 5, I-50125 Firenze (Italy); Karovska, Margarita [Smithsonian Astrophysical Observatory, MS 4, 60 Garden Street, Cambridge, MA 02138 (United States); Horst, Alexander J. van der [Department of Physics, The George Washington University, 725 21 Street NW, Washington, DC 20052 (United States); Yukita, Mihoko [The Johns Hopkins University, Homewood Campus, Baltimore, MD 21218 (United States); Weisskopf, Martin C. [Astrophysics Office, NASA Marshall Space Flight Center, ZP12, Huntsville, AL 35812 (United States)

    2015-07-20

    Deep Chandra ACIS observations of the region around the putative pulsar, CXOU J061705.3+222127, in the supernova remnant (SNR) IC 443 reveal an ∼5″ radius ring-like structure surrounding the pulsar and a jet-like feature oriented roughly north–south across the ring and through the pulsar's location at 06{sup h}17{sup m}5.{sup s}200 + 22°21′27.″52 (J2000.0 coordinates). The observations further confirm that (1) the spectrum and flux of the central object are consistent with a rotation-powered pulsar, (2) the non-thermal spectrum and morphology of the surrounding nebula are consistent with a pulsar wind, and (3) the spectrum at greater distances is consistent with thermal emission from the SNR. The cometary shape of the nebula, suggesting motion toward the southwest, appears to be subsonic: There is no evidence either spectrally or morphologically for a bow shock or contact discontinuity; the nearly circular ring is not distorted by motion through the ambient medium; and the shape near the apex of the nebula is narrow. Comparing this observation with previous observations of the same target, we set a 99% confidence upper limit to the proper motion of CXOU J061705.3+222127 to be less than 44 mas yr{sup −1} (310 km s{sup −1} for a distance of 1.5 kpc), with the best-fit (but not statistically significant) projected direction toward the west.

  3. Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

    DEFF Research Database (Denmark)

    Godin, Jean; Nodjiadjim, V.; Riet, Muriel

    2008-01-01

    We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Vari...... applications of interest....

  4. High diagnostic value of second generation CSF RT-QuIC across the wide spectrum of CJD prions.

    Science.gov (United States)

    Franceschini, Alessia; Baiardi, Simone; Hughson, Andrew G; McKenzie, Neil; Moda, Fabio; Rossi, Marcello; Capellari, Sabina; Green, Alison; Giaccone, Giorgio; Caughey, Byron; Parchi, Piero

    2017-09-06

    An early and accurate in vivo diagnosis of rapidly progressive dementia remains challenging, despite its critical importance for the outcome of treatable forms, and the formulation of prognosis. Real-Time Quaking-Induced Conversion (RT-QuIC) is an in vitro assay that, for the first time, specifically discriminates patients with prion disease. Here, using cerebrospinal fluid (CSF) samples from 239 patients with definite or probable prion disease and 100 patients with a definite alternative diagnosis, we compared the performance of the first (PQ-CSF) and second generation (IQ-CSF) RT-QuIC assays, and investigated the diagnostic value of IQ-CSF across the broad spectrum of human prions. Our results confirm the high sensitivity of IQ-CSF for detecting human prions with a sub-optimal sensitivity for the sporadic CJD subtypes MM2C and MM2T, and a low sensitivity limited to variant CJD, Gerstmann-Sträussler-Scheinker syndrome and fatal familial insomnia. While we found no difference in specificity between PQ-CSF and IQ-CSF, the latter showed a significant improvement in sensitivity, allowing prion detection in about 80% of PQ-CSF negative CJD samples. Our results strongly support the implementation of IQ-CSF in clinical practice. By rapidly confirming or excluding CJD with high accuracy the assay is expected to improve the outcome for patients and their enrollment in therapeutic trials.

  5. Determination of Na+ and K+ ions in the high-level liquid waste by ion chromatography (IC)

    International Nuclear Information System (INIS)

    Chen Lianzhong; Ma Guilan

    1992-01-01

    The determination of Na + and k + ions in the high-level liquid waste is investigated using ion chromatography. In order to protect the low capacity ion exchange resin in single column IC and remove the transition metal as well as other heavy metal ions that are contained in liquid waste, the pretreatment column with EDTA chelating resin is used. Those impurity metal ions are strongly absorbed by EDTA chelating resin and 100% of Na + and K + ions in the solution are eluted. The ability of the decontamination of EDTA chelating resin is satisfactory. The sample of the high-level liquid waste is diluted appropriately, then an aliquot of the sample is passed through the pretreatment column with EDTA chelating resin, the eluate is analysed by single column ion chromatography. The precision of this method is better than 5% for the determination of Na + and K + ions (at μg· ml -1 level)

  6. A new high-voltage level-shifting circuit for half-bridge power ICs

    International Nuclear Information System (INIS)

    Kong Moufu; Chen Xingbi

    2013-01-01

    In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed. The integrated low-voltage power supply not only provides energy for the level-shifting circuit and the logic circuit, but also provides voltage signals for the gates and sources of the PMOS active resistors to ensure that they are normally-on. The normally-on PMOS transistors do not, therefore, need to be fabricated in the depletion process. The current mirror ensures that the level-shifting circuit has a constant current, which can reduce the process error of the high-voltage devices of the circuit. Moreover, an improved RS trigger is also proposed to improve the reliability of the circuit. The proposed level-shifting circuit is analyzed and confirmed by simulation with MEDICI, and the simulation results show that the function is achieved well. (semiconductor integrated circuits)

  7. Low Cost SU8 Based Above IC Process for High Q RF Power Inductors Integration

    International Nuclear Information System (INIS)

    Ghannam, A.; Bourrier, D.; Viallon, Ch.; Parra, Th.

    2011-01-01

    This paper presents a new process for integration of high-Q RF power inductors above low resistivity silicon substrates. The process uses the SU8 resin as a dielectric layer. The aim of using the SU8 is to form thick dielectric layer that can enhance the performance of the inductors. The flexibility of the process enables the possibility to realize complex shaped planar inductors with various dielectric and metal thicknesses to meet the requirements of the application. Q values of 55 at 5 GHz has been demonstrated for an inductance value of 0.8 nH using a 60 μm thick SU8 layer and 30 μm thick copper ribbons. (author)

  8. HIGH STAR FORMATION RATES IN TURBULENT ATOMIC-DOMINATED GAS IN THE INTERACTING GALAXIES IC 2163 AND NGC 2207

    International Nuclear Information System (INIS)

    Elmegreen, Bruce G.; Kaufman, Michele; Bournaud, Frédéric; Juneau, Stéphanie; Elmegreen, Debra Meloy; Struck, Curtis; Brinks, Elias

    2016-01-01

    CO observations of the interacting galaxies IC 2163 and NGC 2207 are combined with HI, H α , and 24 μ m observations to study the star formation rate (SFR) surface density as a function of the gas surface density. More than half of the high-SFR regions are HI dominated. When compared to other galaxies, these HI-dominated regions have excess SFRs relative to their molecular gas surface densities but normal SFRs relative to their total gas surface densities. The HI-dominated regions are mostly located in the outer part of NGC 2207 where the HI velocity dispersion is high, 40–50 km s −1 . We suggest that the star-forming clouds in these regions have envelopes at lower densities than normal, making them predominantly atomic, and cores at higher densities than normal because of the high turbulent Mach numbers. This is consistent with theoretical predictions of a flattening in the density probability distribution function for compressive, high Mach number turbulence.

  9. HIGH STAR FORMATION RATES IN TURBULENT ATOMIC-DOMINATED GAS IN THE INTERACTING GALAXIES IC 2163 AND NGC 2207

    Energy Technology Data Exchange (ETDEWEB)

    Elmegreen, Bruce G. [IBM Research Division, T.J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598 (United States); Kaufman, Michele [110 Westchester Rd, Newton, MA 02458 (United States); Bournaud, Frédéric; Juneau, Stéphanie [Laboratoire AIM-Paris-Saclay, CEA/DSM-CNRS-Université Paris Diderot, Irfu/Service d’Astrophysique, CEA Saclay, Orme des Merisiers, F-91191 Gif sur Yvette (France); Elmegreen, Debra Meloy [Department of Physics and Astronomy, Vassar College, Poughkeepsie, NY 12604 (United States); Struck, Curtis [Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Brinks, Elias, E-mail: bge@us.ibm.com, E-mail: kaufmanrallis@icloud.com, E-mail: frederic.bournaud@gmail.com, E-mail: stephanie.juneau@cea.fr, E-mail: elmegreen@vassar.edu, E-mail: struck@iastate.edu, E-mail: e.brinks@herts.ac.uk [University of Hertfordshire, Centre for Astrophysics Research, College Lane, Hatfield AL10 9AB (United Kingdom)

    2016-05-20

    CO observations of the interacting galaxies IC 2163 and NGC 2207 are combined with HI, H α , and 24 μ m observations to study the star formation rate (SFR) surface density as a function of the gas surface density. More than half of the high-SFR regions are HI dominated. When compared to other galaxies, these HI-dominated regions have excess SFRs relative to their molecular gas surface densities but normal SFRs relative to their total gas surface densities. The HI-dominated regions are mostly located in the outer part of NGC 2207 where the HI velocity dispersion is high, 40–50 km s{sup −1}. We suggest that the star-forming clouds in these regions have envelopes at lower densities than normal, making them predominantly atomic, and cores at higher densities than normal because of the high turbulent Mach numbers. This is consistent with theoretical predictions of a flattening in the density probability distribution function for compressive, high Mach number turbulence.

  10. CVD molybdenum films of high infrared reflectance

    Energy Technology Data Exchange (ETDEWEB)

    Carver, G. E.

    1979-01-01

    Molybdenum thin films of high infrared reflectance have been deposited by pyrolytic decomposition of molybdenum carbonyl (Mo(CO)/sub 6/), and by hydrogen reduction of molybdenum pentachloride (MoCl/sub 5/). Reflectance values within 0.7% of the reflectance of supersmooth bulk molybdenum have been attained by annealing films of lower reflectance in both reducing and non-reducing atmospheres. All depositions and anneals proceed at atmospheric pressure, facilitating a continuous, flow-through fabrication. These reflectors combine the high temperature stability of molybdenum thin films with the infrared reflectance of a material such as aluminum. Deposition from Mo(CO)/sub 6/ under oxidizing conditions, and subsequent anneal in a reducing atmosphere, results in films that combine high solar absorptance with low thermal emittance. If anti-reflected, black molybdenum films can serve as highly selective single layer photothermal converters. Structural, compositional, and crystallographic properties have been measured after both deposition and anneal.

  11. On the application of a new principle and new class of materials for protection of the IC systems against high power electromagnetic pulses (HPEMP)

    International Nuclear Information System (INIS)

    Vuchkov, L.

    2008-01-01

    The aim of the present work is to make a survey of a new principle and the possibilities for scientific investigations, testing and industrial incorporation of a new shielding material and technology for protection of the IC systems against high energy electromagnetic pulses and ion irradiation. The main result of the implementation of the new- principle, material and technology is to increase the safety of the critical military and civilian infrastructures, land-based and space techniques, apparatuses, devices and their components against high energy electromagnetic pulses and ion irradiation, including electromagnetic weapon arsenal of the international terrorist groups. Key words: electromagnetic pulses, ion irradiation, IC electronic equipment degradation, shielding protection

  12. On the application of a new principle and new class of materials for protection of the IC systems against high power electromagnetic pulses (HPEMP)

    Energy Technology Data Exchange (ETDEWEB)

    Vuchkov, L. [Institute of Electrochemistry and Energy Systems, Bulgarian Academy of Scinces, Sofia (Bulgaria)

    2008-07-01

    The aim of the present work is to make a survey of a new principle and the possibilities for scientific investigations, testing and industrial incorporation of a new shielding material and technology for protection of the IC systems against high energy electromagnetic pulses and ion irradiation. The main result of the implementation of the new- principle, material and technology is to increase the safety of the critical military and civilian infrastructures, land-based and space techniques, apparatuses, devices and their components against high energy electromagnetic pulses and ion irradiation, including electromagnetic weapon arsenal of the international terrorist groups. Key words: electromagnetic pulses, ion irradiation, IC electronic equipment degradation, shielding protection.

  13. High temperature superconductor thin films

    International Nuclear Information System (INIS)

    Correra, L.

    1992-01-01

    Interdisciplinary research on superconducting oxides is the main focus of the contributors in this volume. Several aspects of the thin film field from fundamental properties to applications are examined. Interesting results for the Bi system are also reviewed. The 132 papers, including 8 invited, report mainly on the 1-2-3 system, indicating that the Y-Ba-Cu-O and related compounds are still the most intensively studied materials in this field. The volume attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved. The papers are presented in five chapters, subsequently on properties, film growth and processing, substrates and multilayers, structural characterization, and applications

  14. Men and IC

    Science.gov (United States)

    ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ...

  15. IC Treatment: Surgical Procedures

    Science.gov (United States)

    ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ...

  16. IC: Frequently Asked Questions

    Science.gov (United States)

    ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ...

  17. General IC Symptoms

    Science.gov (United States)

    ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ...

  18. Children and IC

    Science.gov (United States)

    ... Cola, and Orange Crush, for example), Kool-Aid, chocolate, and many fruits, fruit juices and drinks (including ... Guideline IC Treatments IC Diet & Self Management Physical Therapy Antidepressants Antihistamines Pentosan Polysulfate Sodium Bladder Instillations Immunosuppresants ...

  19. A high PSRR Class-D audio amplifier IC based on a self-adjusting voltage reference

    OpenAIRE

    Huffenus , Alexandre; Pillonnet , Gaël; Abouchi , Nacer; Goutti , Frédéric; Rabary , Vincent; Cittadini , Robert

    2010-01-01

    International audience; In a wide range of applications, audio amplifiers require a large Power Supply Rejection Ratio (PSRR) that the current Class-D architecture cannot reach. This paper proposes a self-adjusting internal voltage reference scheme that sets the bias voltages of the amplifier without losing on output dynamics. This solution relaxes the constraints on gain and feedback resistors matching that were previously the limiting factor for the PSRR. Theory of operation, design and IC ...

  20. Validating a High Performance Liquid Chromatography-Ion Chromatography (HPLC-IC) Method with Conductivity Detection After Chemical Suppression for Water Fluoride Estimation.

    Science.gov (United States)

    Bondu, Joseph Dian; Selvakumar, R; Fleming, Jude Joseph

    2018-01-01

    A variety of methods, including the Ion Selective Electrode (ISE), have been used for estimation of fluoride levels in drinking water. But as these methods suffer many drawbacks, the newer method of IC has replaced many of these methods. The study aimed at (1) validating IC for estimation of fluoride levels in drinking water and (2) to assess drinking water fluoride levels of villages in and around Vellore district using IC. Forty nine paired drinking water samples were measured using ISE and IC method (Metrohm). Water samples from 165 randomly selected villages in and around Vellore district were collected for fluoride estimation over 1 year. Standardization of IC method showed good within run precision, linearity and coefficient of variance with correlation coefficient R 2  = 0.998. The limit of detection was 0.027 ppm and limit of quantification was 0.083 ppm. Among 165 villages, 46.1% of the villages recorded water fluoride levels >1.00 ppm from which 19.4% had levels ranging from 1 to 1.5 ppm, 10.9% had recorded levels 1.5-2 ppm and about 12.7% had levels of 2.0-3.0 ppm. Three percent of villages had more than 3.0 ppm fluoride in the water tested. Most (44.42%) of these villages belonged to Jolarpet taluk with moderate to high (0.86-3.56 ppm) water fluoride levels. Ion Chromatography method has been validated and is therefore a reliable method in assessment of fluoride levels in the drinking water. While the residents of Jolarpet taluk (Vellore distict) are found to be at a high risk of developing dental and skeletal fluorosis.

  1. High-dose-rate intracavitary brachytherapy (HDR-IC) in treatment of cervical carcinoma: 5-year results and implication of increased low-grade rectal complication on initiation of an HDR-IC fractionation scheme

    International Nuclear Information System (INIS)

    Wang Chongjong; Wan Leung, Stephen; Chen Huichun; Sun Limin; Fang Fumin; Changchien Chanchao; Huang Engyen; Wu Jiaming; Chen Chuhnchih

    1997-01-01

    Purpose: To report the treatment results and rectal/bladder complications of cervical carcinoma radically treated with high-dose-rate intracavitary brachytherapy (HDR-IC). The current policy of using three-fraction scheme was examined. Methods and Materials: Between November 1987 and August 1990, 173 patients with cervical carcinoma were treated with curative-intent radiation therapy. Whole pelvic irradiation was administered with 10-MV X ray. Dose to the central cervix was 40-44 Gy in 20-22 fractions, following by pelvic wall boost 6-14 Gy in three to seven fractions with central shielding. 60 Co sources were used for HDR-IC, and 7.2 Gy was given to Point A for three applications, 1-2 weeks apart. Duration of follow-up was 5-7.8 years. Results: Twenty-eight patients (16%) developed central-regional recurrences. Overall 5-year actuarial pelvic control rate was 83%. By stage, 5-year actuarial pelvic control rates were 94%, 87%, and 72% for Stages IB + IIA, IIB + IIIA, and IIIB + IVA, respectively. Thirty-one patients (18%) developed distant metastasis. Overall 5-year actuarial survival rate was 58%. By stage, 5-year actuarial survival rates were 79%, 59%, and 41% for Stages IB + IIA, IIB + IIIA, and IIIB + IVA, respectively. Sixty-six (38%) and 19 patients (11%) developed rectal and bladder complications, respectively. For rectal complication, the overall actuarial rate was 38% at 5 years. By grade, 5-year actuarial rectal complication rates were 24%, 15%, 4%, and 3% for Grades 1-4, respectively. Overall prevalence of rectal complications was 37% and 14% at 2 and 5 years, respectively. Prevalence of low-grade rectal complication (Grades 1 and 2) was dominant at 2 years (30%), but declined to 8% at 5 years. Prevalence of high-grade, severe rectal complication (Grades 3 and 4) remained steady at 2 and 5 years (7% and 6%, respectively). Five-year actuarial bladder complication was 9%. Five-year prevalence of bladder complication was 2%. Conclusion: Using a three

  2. Pregnancy and IC

    Science.gov (United States)

    ... have not already done so, try to identify foods, beverages, and supplements that are irritating to your bladder ... Other Medicines Over-the-counter Medicines Pain Management Management of IC ... Diet Food Diaries Least and Most Bothersome Foods IC-Friendly ...

  3. Highly stressed carbon film coatings on silicon potential applications

    CERN Multimedia

    Sharda, T

    2002-01-01

    The fabrication of highly stressed and strongly adhered nanocrystalline diamond films on Si substrates is presented. A microwave plasma CVD method with controlled and continuous bias current density was used to grow the films. The stress/curvature of the films can be varied and controlled by altering the BCD. Potential applications for these films include particle physics and x-ray optics.

  4. IC Associated Conditions

    Science.gov (United States)

    ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Click to learn more about these and ...

  5. LD to IC

    CERN Multimedia

    Association du personnel

    2010-01-01

    LC to IC – Publication of posts: Following the publication of new LD to IC posts, we regret that a large number of post descriptions are not available in both CERN official languages, English and French. Consequently, the Staff Association has decided to provide assistance to those who need it with the translation of one or more posts of interest. To do this, please contact the Staff Association secretariat, tel. 72819 or 72761 or 74224.

  6. Highly coercive thin-film nanostructures

    International Nuclear Information System (INIS)

    Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

    2005-01-01

    The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

  7. High efficiency thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schock, Hans-Werner [Helmholtz Zentrum Berlin (Germany). Solar Energy

    2012-11-01

    Production of photovoltaics is growing worldwide on a gigawatt scale. Among the thin film technologies, Cu(In,Ga)S,Se{sub 2} (CIS or CIGS) based solar cells have been the focus of more and more attention. This paper aims to analyze the success of CIGS based solar cells and the potential of this technology for future photovoltaics large-scale production. Specific material properties make CIS unique and allow the preparation of the material with a wide range of processing options. The huge potential lies in the possibility to take advantage of modern thin film processing equipment and combine it with very high efficiencies beyond 20% already achieved on the laboratory scale. A sustainable development of this technology could be realized by modifying the materials and replacing indium by abundant elements. (orig.)

  8. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  9. Temperature behavior of electrical properties of high-k lead-magnesium-niobium titanate thin-films

    Energy Technology Data Exchange (ETDEWEB)

    Chen Wenbin, E-mail: cwb0201@163.com [Electromechanical Engineering College, Guilin University of Electronic Technology (China); McCarthy, Kevin G. [Department of Electrical and Electronic Engineering, University College Cork (Ireland); Copuroglu, Mehmet; O' Brien, Shane; Winfield, Richard; Mathewson, Alan [Tyndall National Institute, University College Cork (Ireland)

    2012-05-01

    This paper reports on the temperature dependence of the electrical properties of high-k lead-magnesium-niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 Degree-Sign C and 750 Degree-Sign C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.

  10. The oiling of ICS

    International Nuclear Information System (INIS)

    Hunter, S.

    1993-01-01

    The incident command system (ICS) works for oil spills. It should be the industry standard and some will argue that it already is. But there are a number of temptations to fiddle with it. Fueling these inclinations is the fundamental difference between oil spills and natural disasters: Oil spills make the perpetrator fix the problem - under heavy oversight. Add to this difference the public outcry that attends oil spills and the dual role of government as both helper and prosecutor. From these conditions emerge adaptations of ICS which both weaken and strengthen it. The benefits of ICS are diminished by deputy incident commanders who block unified commanders from access to section chiefs, over-zealous crisis managers who displace command post decisions or its information office, separate press offices with party line slants, government law enforcement activity mixed into spill response, nonstandard operations terminology and structure involving open-quotes containment and clean upclose quotes or open-quotes salvage,close quotes and the commingling of public and private response funds. ICS's application to oil spill response is strengthened by the use of trained unified commanders, deputy incident commanders who operate as staff rather than line, crisis managers who support on-scene objectives, joint information centers, and heavy involvement of skilled, prepared environmental assessment teams in the planning section who generate priorities, strategies, and (operationally coordinated) tactics. Technically, not all these points constitute alterations of ICS, but most do and the others come close. This mixed bag of strengthening and weakening tweaks to oil spill ICS provides an opportunity to take a new look at this faithful friend to the crisis responder

  11. Study of a Particle Based Films Cure Process by High-Frequency Eddy Current Spectroscopy

    Directory of Open Access Journals (Sweden)

    Iryna Patsora

    2016-12-01

    Full Text Available Particle-based films are today an important part of various designs and they are implemented in structures as conductive parts, i.e., conductive paste printing in the manufacture of Li-ion batteries, solar cells or resistive paste printing in IC. Recently, particle based films were also implemented in the 3D printing technique, and are particularly important for use in aircraft, wind power, and the automotive industry when incorporated onto the surface of composite structures for protection against damages caused by a lightning strike. A crucial issue for the lightning protection area is to realize films with high homogeneity of electrical resistance where an in-situ noninvasive method has to be elaborated for quality monitoring to avoid undesirable financial and time costs. In this work the drying process of particle based films was investigated by high-frequency eddy current (HFEC spectroscopy in order to work out an automated in-situ quality monitoring method with a focus on the electrical resistance of the films. Different types of particle based films deposited on dielectric and carbon fiber reinforced plastic substrates were investigated in the present study and results show that the HFEC method offers a good opportunity to monitor the overall drying process of particle based films. Based on that, an algorithm was developed, allowing prediction of the final electrical resistance of the particle based films throughout the drying process, and was successfully implemented in a prototype system based on the EddyCus® HFEC device platform presented in this work. This prototype is the first solution for a portable system allowing HFEC measurement on huge and uneven surfaces.

  12. Tech-X Corporation releases simulation code for solving complex problems in plasma physics : VORPAL code provides a robust environment for simulating plasma processes in high-energy physics, IC fabrications and material processing applications

    CERN Multimedia

    2005-01-01

    Tech-X Corporation releases simulation code for solving complex problems in plasma physics : VORPAL code provides a robust environment for simulating plasma processes in high-energy physics, IC fabrications and material processing applications

  13. Improved thermal stability of polylactic acid (PLA) composite film via PLA-β-cyclodextrin-inclusion complex systems.

    Science.gov (United States)

    Byun, Youngjae; Rodriguez, Katia; Han, Jung H; Kim, Young Teck

    2015-11-01

    The effects of the incorporation of PLA-β-cyclodextrin-inclusion complex (IC) and β-cyclodextrin (β-CD) on biopolyester PLA films were investigated. Thermal stability, surface morphology, barrier, and mechanical properties of the films were measured at varying IC (1, 3, 5, and 7%) and β-CD (1 and 5%) concentrations. The PLA-IC-composite films (IC-PLA-CFs) showed uniform morphological structure, while samples containing β-CD (β-CD-PLA-CFs) showed high agglomeration of β-CD due to poor interfacial interaction between β-CD and PLA moieties. According to the thermal property analysis, the 5% IC-PLA-CFs showed 6.6 times lower dimensional changes (6.5%) at the temperature range of 20-80°C than that of pure PLA film (43.0%). The increase of IC or β-CD content in the PLA-composite films shifted the glass transition and crystallization temperature to higher temperature regions. The crystallinity of both composite films improved by increasing IC or β-CD content. Both composite films had higher oxygen and water vapor permeability as IC or β-CD content increased in comparison to pure PLA film. All the composite films had less flexibility and lower tensile strength than the pure PLA film. In conclusion, this study shows that the IC technique is valuable to improve the thermal expansion stability of PLA-based films. Published by Elsevier B.V.

  14. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy

    International Nuclear Information System (INIS)

    Lai Yiuwai; Hofmann, Martin R; Ludwig, Alfred; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios

    2011-01-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  15. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    Science.gov (United States)

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  16. Water saving in IC wafer washing process; IC wafer senjo deno sessui taisaku

    Energy Technology Data Exchange (ETDEWEB)

    Harada, H. [Mitsubishi Corp., Tokyo (Japan); Araki, M.; Nakazawa, T.

    1997-11-30

    This paper reports features of a wafer washing technology, a new IC wafer washing process, its pure water saving effect, and a `QC washing` which has pure water saving effect in the wafer washing. Wafer washing processes generally include the SC1 process (using ammonia + hydrogen peroxide aqueous solution) purposed for removing contamination due to ultrafine particles, the SC2 process (using hydrochloric acid + hydrogen peroxide aqueous solution) purposed for removing contamination due to heavy metals, the piranha washing process (using hot sulfuric acid + hydrogen peroxide aqueous solution) purposed for removing contamination due to organic matters, and the DHF (using dilute hydrofluoric acid) purposed for removing natural oxide films. Natural oxide films are now remained as surface protection films, by which surface contamination has been reduced remarkably. A high-temperature washing chemical circulating and filtering technology developed in Japan has brought about a reform in wafer washing processes having been used previously. Spin washing is used as a water saving measure, in which washing chemicals or pure water are sprayed onto one each of wafers which is spin-rotated, allowing washing and rinsing to be made with small amount of washing chemicals and pure water. The QC washing is a method to replace tank interior with pure was as quick as possible in order to increase the rinsing effect. 7 refs., 5 figs.

  17. Usefulness and problems of film dosimetry in high energy radiotherapy

    International Nuclear Information System (INIS)

    Hirabayashi, Hisae

    1995-01-01

    Film dosimetry is a convenient and quick method of obtaining a set of high energy radiation isodose curves in the plane of the film, but it is an empirical method which presents some problems. Many authors have reported on film dosimetry for industrial films. Recently, the development of computerized densitometer systems, ready-pack films for radiotherapy and automatic film processors has helped improve the procedure. This paper reports our experiences regarding film dosimetry using the new materials, its usefulness in radiotherapy and some of technical problems encountered. The optical density value corresponding to a given dose depends upon the processing conditions, for XV-2 film, variation is about 4% when an automatic processor is used under controlled conditions. The Off-axis-ratios and the PDD in the perpendicular film plane agree well with the ion-chamber for photon and electron beams; by contrast, the PDD in the parallel film plane is significantly affected by variations in the phantom thickness, the type of film package and misalignment in phantom. But, bare films inserted into a cassette made of phantom material agree well for electron beams. Film dosimetry is effective and accurate at the edges of the field and for small fields, due to its high spatial resolution and rapid method. In addition, it is useful for electron beams OCR beam data input; for evaluating the input parameters for treatment planning systems; for quality assurance of the treatment equipment; and for preliminary clinical studies. Even when modern materials are used for film dosimetry, some technical problems will arise. Thus, to ensure the accuracy, certain precautions are required when setting conditions of film exposure and for quality control of the film processor. (author)

  18. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  19. High-coercivity FePt sputtered films

    International Nuclear Information System (INIS)

    Luong, N.H.; Hiep, V.V.; Hong, D.M.; Chau, N.; Linh, N.D.; Kurisu, M.; Anh, D.T.K.; Nakamoto, G.

    2005-01-01

    Fe 56 Pt 44 thin films have been prepared by RF magnetron sputtering on Si substrates. The substrate temperature was kept at 350 deg C. The X-ray diffraction patterns of as-deposited FePt films exhibited a disordered structure. Annealing of the films at 650-685 deg C for 1 h yielded an ordered L1 0 phase with FCT structure. The high value for coercivity H C of 17 kOe was obtained at room temperature for the 68 nm thick film annealed at 685 deg C. The hard magnetic properties as well as grain structure of the films strongly depend on the annealing conditions

  20. Organ ic Agroedu - Tourism Attractions t oward a n Interesting O utdoor Environmental Education t o Junior High School Students

    Directory of Open Access Journals (Sweden)

    Ayu Raisa Khairun Nisa

    2014-05-01

    Full Text Available The purpose of this study is to evaluate two organic agroedu-tourism attractions developed to 42 students of eight graders of three junior high schools in the village and one school in the city. Organic agroedu-tourism offers two tour programs namely Organic Garden Tour and Organic Farming Technology. Appreciations of the participants were determined by pre and post test after joining the organic agroedu-tourism. The data were analyzed by using descriptive statistics. This study shows that 78.6 % of the participants prefer the Organic Garden Tour and 21.4% find that the Organic Farming Technology is better. Organic agroedu-tourism can develop cognitive aspect of participants from score 1 turned into 3. Most participants had a high interest in joining the organic egroedu-tourism. Organic agroedu-tourism is also able to meet the expectations of participants that are indicated by an increase in the skills and experience of participants from score 2 to 5. Satisfaction of the participants can also be assessed from the high appreciation average before and after joining Organic agroedu-tourism, which are score 4. The appreciation of the participant is shown by their willingness to invite other people to join. Factors affecting participants’ satisfaction were family background, socio-economy background, personal perception and knowledge. Based on the result, organic agroedu-tourism shows strength to develop the participants’ understanding, knowledge and skills in integrated organic farming system, even though not all participants are interested to join all programs provided. Farmer groups need to improve the quality of organic agroedu-tourism, for example, completing the facilities and agreed on tourism attractions, enhancing farmers’ skills as tour guide, providing organic agroedu-tourism program relevant to the school curriculum, and promoting it to public.

  1. Schmitt-Trigger-based Recycling Sensor and Robust and High-Quality PUFs for Counterfeit IC Detection

    OpenAIRE

    Lin, Cheng-Wei; Jang, Jae-Won; Ghosh, Swaroop

    2015-01-01

    We propose Schmitt-Trigger (ST) based recycling sensor that are tailored to amplify the aging mechanisms and detect fine grained recycling (minutes to seconds). We exploit the susceptibility of ST to process variations to realize high-quality arbiter PUF. Conventional SRAM PUF suffer from environmental fluctuation-induced bit flipping. We propose 8T SRAM PUF with a back-to-back PMOS latch to improve robustness by 4X. We also propose a low-power 7T SRAM with embedded Magnetic Tunnel Junction (...

  2. Improving the IcRn product and the reproducibility of high Tc Josephson junctions made by ion irradiation

    International Nuclear Information System (INIS)

    Sirena, M.; Fabreges, X.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.

    2007-01-01

    A simple model has been proposed to explain the spread in the characteristics of high T c Josephson junctions made by ion irradiation, assuming that the source of dispersion is the slit's size variation. Accordingly, increasing ion energy should lead to a significant reduction of inhomogeneities. Test samples have been fabricated using two different beam energies. As predicted, the spread in critical current decreases upon increasing energy. Moreover, since the actual width of the barrier is reduced in this case, the I c R n product increases significantly. These results seem promising for future technological applications

  3. Deriving temperature, mass, and age of evolved stars from high-resolution spectra. Application to field stars and the open cluster IC 4651

    Science.gov (United States)

    Biazzo, K.; Pasquini, L.; Girardi, L.; Frasca, A.; da Silva, L.; Setiawan, J.; Marilli, E.; Hatzes, A. P.; Catalano, S.

    2007-12-01

    Aims:We test our capability of deriving stellar physical parameters of giant stars by analysing a sample of field stars and the well studied open cluster IC 4651 with different spectroscopic methods. Methods: The use of a technique based on line-depth ratios (LDRs) allows us to determine with high precision the effective temperature of the stars and to compare the results with those obtained with a classical LTE abundance analysis. Results: (i) For the field stars we find that the temperatures derived by means of the LDR method are in excellent agreement with those found by the spectral synthesis. This result is extremely encouraging because it shows that spectra can be used to firmly derive population characteristics (e.g., mass and age) of the observed stars. (ii) For the IC 4651 stars we use the determined effective temperature to derive the following results. a) The reddening E(B-V) of the cluster is 0.12±0.02, largely independent of the color-temperature calibration used. b) The age of the cluster is 1.2±0.2 Gyr. c) The typical mass of the analysed giant stars is 2.0±0.2~M⊙. Moreover, we find a systematic difference of about 0.2 dex in log g between spectroscopic and evolutionary values. Conclusions: We conclude that, in spite of known limitations, a classical spectroscopic analysis of giant stars may indeed result in very reliable stellar parameters. We caution that the quality of the agreement, on the other hand, depends on the details of the adopted spectroscopic analysis. Based on observations collected at the ESO telescopes at the Paranal and La Silla Observatories, Chile.

  4. Determination of trace elements in Ethiopian, Vietnamese, and Japanese women using high-resolution IC-PMS.

    Science.gov (United States)

    Tekeste, Zinaye; Amare, Bemnet; Asfaw, Fanaye; Fantahun, Bereket; van Nguyen, Nhien; Nishikawa, Takeshi; Yabutani, Tomoki; Okayasu, Takako; Ota, Fusao; Kassu, Afework

    2015-10-01

    Humans and other living organisms require small quantities of trace elements throughout life. Both insufficient and excessive intakes of trace elements can have negative consequences. However, there is little information on serum level of trace elements in different populations. This study examines serum levels of trace elements in Ethiopian, Japanese, and Vietnamese women. Random samples of healthy women who were referred for routine hospital laboratory examinations in the cities of Hanoi, Sapporo, and Gondar were invited to participate in the study. Serum levels of magnesium, zinc, copper, iron, selenium, and calcium were determined using an inductively coupled plasma mass spectrometer. Furthermore, body mass index of each study participant was determined. The mean ± SD serum concentrations of zinc (μg/dL), copper (μg/dL), iron (μg/dL), selenium (μg/dL) and calcium (mg/dL), respectively, were 76.51 ± 39.16, 152.20 ± 55.37, 385.68 ± 217.95, 9.15 ± 4.21, and 14.18 ± 3.91 in Ethiopian women; 111.49 ± 52.92, 105.86 ± 26.02, 155.09 ± 94.83, 14.11 ± 3.41, and 11.66 ± 2.51 in Vietnamese women; and 60.69 ± 9.76, 107 ± 156, 268 ± 128, 8.33 ± 3.65, and 11.18 ± 0.68 in Japanese participants. Ethiopian women had significantly higher level of serum calcium than Vietnamese and Japanese women (both P Vietnamese women was higher than in women from Japan, the difference was not statistically significant (P > 0.05). Furthermore, compared with Japanese women, Ethiopian women had significantly high iron and copper concentrations (P Vietnamese than Ethiopian women. The study revealed a remarkable difference in serum concentrations of trace elements in women from different countries, implying differences in trace elements in the food or soil. Copyright © 2015 Elsevier Inc. All rights reserved.

  5. Irregular Dwarf Galaxy IC 1613

    Science.gov (United States)

    2005-01-01

    Ultraviolet image (left) and visual image (right) of the irregular dwarf galaxy IC 1613. Low surface brightness galaxies, such as IC 1613, are more easily detected in the ultraviolet because of the low background levels compared to visual wavelengths.

  6. High Precision Metal Thin Film Liftoff Technique

    Science.gov (United States)

    Brown, Ari D. (Inventor); Patel, Amil A. (Inventor)

    2015-01-01

    A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.

  7. High-coercive garnet films for thermo-magnetic recording

    International Nuclear Information System (INIS)

    Berzhansky, V N; Danishevskaya, Y V; Nedviga, A S; Milyukova, H T

    2016-01-01

    The possibility of using high-coercive of garnet films for thermo-magnetic recording is related with the presence of the metastable domain structure, which arises due to a significant mismatch of the lattice parameters of the film and the substrate. In the work the connection between facet crystal structure of elastically strained ferrite garnets films and the domain structure in them is established by methods of phase contrast and polarization microscopy. (paper)

  8. High temperature phases in PZT ferroelectric films

    Czech Academy of Sciences Publication Activity Database

    Deineka, Alexander; Suchaneck, G.; Jastrabík, Lubomír; Gerlach, G.

    2003-01-01

    Roč. 293, - (2003), s. 111-118 ISSN 0015-0193 R&D Projects: GA ČR GP202/02/D078; GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferroelectric film * phase transition * film profile Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.406, year: 2003

  9. High Rate Micromechanical Behavior of Grafted Polymer Nanoparticle Films

    Science.gov (United States)

    Thomas, Edwin

    We report the ultra high strain rate behavior of films comprised of polymer grafted nanoparticles (NPs) and compare the results to homopolymer films. The films are formed by flow coating a suspension of polystyrene (PS) chains of 230 kg/mol grafted to 16nm diameter SiO2\\ at a graft density of 0.6 chains/nm2 resulting a film with 1 vol % SiO2. Films of 267 kg/mol PS were also flow coated and both films were impacted at velocities 350-700 ms-1 using 3.7 micron SiO2\\ projectiles to achieve increments in kinetic energy (KE) of 1:2:4. The KE of the projectiles before and after penetration was measured to determine the penetration energy. TEM and SEM suggest the projectile initially induces plastic flow due to the adiabatic temperature rise from impact. As the projectile deforms the film, the lower magnitude, biaxial stress state in the peripherial regions causes material microvoid formation and initiation of craze growth in the radial and tangential directions. The anchoring of the grafted polymer chains to the NPs increases the penetration energy relative to the pure homopolymer by 50% and the films capacity to delocalize the impact by 200%. These results suggest that highly grafted NP films may be useful in lightweight protection systems. In collaboration with Omri Fried, Olawale Lawal, Yang Jiao, Victor Hsaio, Thevamaran Ramathasan, Mujin Zhou, Richard Vaia.

  10. Activity in SRL Nagoya Coated Conductor Center for YBCO Coated Conductor by IBAD+ PLD Method -Long, high Ic conductor and a new bamboo-like nanostructure for efficient pinning

    International Nuclear Information System (INIS)

    Yamada, Yutaka; Ibi, Akira; Fukushima, Hiroyuki; Kuriki, Reiji; Takahashi, Kazuhiro; Kobayashi, Hiroyoshi; Ishida, Satoru; Konishi, Masaya; Miyata, Seiki; Watanabe, Tomonori; Kato, Takeharu; Hirayama, Tsukasa; Shiohara, Yuh

    2006-01-01

    In SRL-Nagoya Coated Conductor Center (NCCC), long buffered substrate tapes and YBCO coated conductors have been successfully fabricated by using ion-beam assisted deposition (IBAD) and pulsed laser deposition (PLD) methods. For the buffered tape, the PLD-CeO2 method, what we call the 'Self-Epitaxial' method, realized the high degree of in-plane texturing around 4 degrees along the length of 220 m. For YBCO deposition, we have recently introduced new reel-to-reel PLD equipment with a multi-plume and multi-turn deposition system (MPMT PLD). This system succeeded in fabricating a long coated conductor with a high critical current, Ic, of 245 A and length of 212 m. Ic xL (length) reached the world record of 51940 Am. Furthermore, the introduction of artificial pinning center and RE 123 materials were also studied for improving flux pinning and enhancing Ic. A new columnar structure of the 'bamboo structure' (BaZrO3/Y123 layer-stacked structure) was found in Y123+YSZ sample. This columnar structure and the stacking faults in Gd123 were found to be effective for enhancing pinning properties. Using these techniques, we have succeeded in increasing Ic at 0 T to 480 A/cm and also enhancing Ic in a magnetic field

  11. Optical investigation of the interaction of an automotive spray and thin films by utilization of a high-pressure spin coater

    Science.gov (United States)

    Seel, Kevin; Reddemann, Manuel A.; Kneer, Reinhold

    2018-03-01

    Although the interaction of automotive sprays with thin films is of high technical relevance for IC engine applications, fundamental knowledge about underlying physical mechanisms is still limited. This work presents a systematic study of the influence of the film's initial thickness—homogeneously spread over a flat wall before the initial spray impingement—on film surface structures and thickness after the interaction. For this purpose, interferometric film thickness measurements and complementary high-speed visualizations are used. By gradually increasing the initial film thickness on a micrometer scale, a shift from a regime of liquid deposition (increasing film thickness with respect to initial film thickness) to a regime of liquid removal (decreasing film thickness with respect to initial film thickness) is observed at the stagnation zone of the impinging spray. This transition is accompanied by the formation of radially propagating surface waves, transporting liquid away from the stagnation zone. Wavelengths and amplitudes of the surface waves are increased with increasing initial film thickness.

  12. Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

    Science.gov (United States)

    Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

    2016-05-04

    Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

  13. Infrared and optical polarimetry of the radio elliptical IC 5063 (PKS2048-57): discovery of a highly polarized non-thermal nucleus

    Energy Technology Data Exchange (ETDEWEB)

    Hough, J H; Brindle, C; Axon, D J; Bailey, J; Sparks, W B

    1987-02-15

    Two-aperture optical and near-infrared polarization and flux measurements of the radio elliptical galaxy IC 5063 are presented. Analysis of the polarized flux shows that the large infrared excess in the nucleus most likely arises from a steep-spectrum non-thermal source with a polarization of 17 per cent and near-infrared luminosity 6x10/sup 41/ erg s/sup -1/. This result suggests that IC5063 is closely related to the more luminous blazars. The origin of the polarization in the optical is, however, not clear.

  14. Infrared and optical polarimetry of the radio elliptical IC 5063 (PKS2048-57): discovery of a highly polarized non-thermal nucleus

    International Nuclear Information System (INIS)

    Hough, J.H.; Brindle, C.; Axon, D.J.; Bailey, J.; Sparks, W.B.

    1987-01-01

    Two-aperture optical and near-infrared polarization and flux measurements of the radio elliptical galaxy IC 5063 are presented. Analysis of the polarized flux shows that the large infrared excess in the nucleus most likely arises from a steep-spectrum non-thermal source with a polarization of 17 per cent and near-infrared luminosity 6x10 41 erg s -1 . This result suggests that IC5063 is closely related to the more luminous blazars. The origin of the polarization in the optical is, however, not clear. (author)

  15. Simplified design of IC amplifiers

    CERN Document Server

    Lenk, John

    1996-01-01

    Simplified Design of IC Amplifiers has something for everyone involved in electronics. No matter what skill level, this book shows how to design and experiment with IC amplifiers. For experimenters, students, and serious hobbyists, this book provides sufficient information to design and build IC amplifier circuits from 'scratch'. For working engineers who design amplifier circuits or select IC amplifiers, the book provides a variety of circuit configurations to make designing easier.Provides basics for all phases of practical design.Covers the most popular forms for amplif

  16. High Performance Thin-Film Composite Forward Osmosis Membrane

    KAUST Repository

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A.; Schiffman, Jessica D.; Elimelech, Menachem

    2010-01-01

    obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed

  17. High-Tc film development for electronic applications

    International Nuclear Information System (INIS)

    Talvacchio, J.; Wagner, G.R.

    1990-01-01

    In this paper, the authors describe the requirements and status of high-T c superconductor (HTS) films for the development of electronic applications with an emphasis on passive microwave devices. One of the most general requirements, a low rf Surface resistance relative to Cu, has been achieved in films of several different HTS compounds. However the best films, made of YBa 2 Cu 3 O 7 (YBCO) by any one of several techniques, have in common a residual surface resistance that is much greater than predicted by conventional superconductivity theory. Improvement in films is also limited by the current size and selection of single-crystal substrate materials. Other issues that must be resolved to develop a full integrated circuit technology for HTS are substrate heating during film deposition, deposited epitaxial insulators, and determination of which interfaces in a multilevel circuit must be formed in situ

  18. Search for very high energy gamma-ray emission from the peculiar radio galaxy IC 310 with TACTIC during 2012 to 2015

    Science.gov (United States)

    Ghosal, B.; Singh, K. K.; Yadav, K. K.; Tickoo, A. K.; Rannot, R. C.; Chandra, P.; Kothari, M.; Gaur, K. K.; Goyal, H. C.; Goyal, A.; Kumar, N.; Marandi, P.; Chanchalani, K.; Agarwal, N. K.; Dhar, V. K.; Koul, M. K.; Koul, R.; Venugopal, K.; Bhat, C. K.; Chouhan, N.; Borwankar, C.; Kaul, S. R.; Bhatt, H.; Agarwal, A.; Gupta, A. C.

    2018-04-01

    Non-blazar active galactic nuclei like radio galaxies have emerged as a new class of γ-ray sources in the sky. Observations of very high energy (VHE) γ-rays from radio galaxies with misaligned jets offer a unique tool to understand the physical processes involved in these type of objects. In this work, we present the results of our observations of the nearby peculiar radio galaxy IC 310 (z = 0.0189) with TACTIC telescope for nearly 95.5 hours from 03 December, 2012 to 19 January, 2015 (MJD 56265 - 57041). Detailed analysis of the data reveals absence of a statistically significant γ-ray signal from the source direction (both on the overall period and on yearly basis). Our results suggest that the source was possibly in a low-TeV emission state (below the TACTIC sensitivity level) during the above mentioned observation period and the resulting 3σ upper limit on the integral flux above 850 GeV has been estimated to be 4.99 ×10-12phcm-2s-1 (23% of the Crab Nebula flux). Analysis of the contemporaneous data collected by Fermi-LAT in the 30 - 300 GeV energy range, also indicate the absence of a statistically significant γ-ray signal, therefore 2σ upper limit on the integral flux above 30 GeV has been estimated on yearly basis. We also report the results from dedicated optical observations in B, V and R bands from ARIES observatory carried out from December, 2014 to March, 2015.

  19. Use of high-temperature superconducting films in superconducting bearings

    International Nuclear Information System (INIS)

    Cansiz, A.

    1999-01-01

    We have investigated the effect of high-temperature superconductor (HTS) films deposited on substrates that are placed above bulk HTSs in an attempt to reduce rotational drag in superconducting bearings composed of a permanent magnet levitated above the film/bulk HTS combination. According to the critical state model, hysteresis energy loss is inversely proportional to critical current density, J c , and because HTS films typically have much higher J c than that of bulk HTS, the film/bulk combination was expected to reduce rotational losses by at least one order of magnitude in the coefficient of fiction, which in turn is a measure of the hysteresis losses. We measured rotational losses of a superconducting bearing in a vacuum chamber and compared the losses with and without a film present. The experimental results showed that contrary to expectation, the rotational losses are increased by the film. These results are discussed in terms of flux drag through the film, as well as of the critical state model

  20. Highly Enhanced Raman Scattering on Carbonized Polymer Films.

    Science.gov (United States)

    Yoon, Jong-Chul; Hwang, Jongha; Thiyagarajan, Pradheep; Ruoff, Rodney S; Jang, Ji-Hyun

    2017-06-28

    We have discovered a carbonized polymer film to be a reliable and durable carbon-based substrate for carbon enhanced Raman scattering (CERS). Commercially available SU8 was spin coated and carbonized (c-SU8) to yield a film optimized to have a favorable Fermi level position for efficient charge transfer, which results in a significant Raman scattering enhancement under mild measurement conditions. A highly sensitive CERS (detection limit of 10 -8 M) that was uniform over a large area was achieved on a patterned c-SU8 film and the Raman signal intensity has remained constant for 2 years. This approach works not only for the CMOS-compatible c-SU8 film but for any carbonized film with the correct composition and Fermi level, as demonstrated with carbonized-PVA (poly(vinyl alcohol)) and carbonized-PVP (polyvinylpyrollidone) films. Our study certainly expands the rather narrow range of Raman-active material platforms to include robust carbon-based films readily obtained from polymer precursors. As it uses broadly applicable and cheap polymers, it could offer great advantages in the development of practical devices for chemical/bio analysis and sensors.

  1. High-mobility ultrathin semiconducting films prepared by spin coating.

    Science.gov (United States)

    Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

    2004-03-18

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  2. High-mobility ultrathin semiconducting films prepared by spin coating

    Science.gov (United States)

    Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

    2004-03-01

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  3. Plasma polymerized high energy density dielectric films for capacitors

    Science.gov (United States)

    Yamagishi, F. G.

    1983-01-01

    High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

  4. High quality digital holographic reconstruction on analog film

    Science.gov (United States)

    Nelsen, B.; Hartmann, P.

    2017-05-01

    High quality real-time digital holographic reconstruction, i.e. at 30 Hz frame rates, has been at the forefront of research and has been hailed as the holy grail of display systems. While these efforts have produced a fascinating array of computer algorithms and technology, many applications of reconstructing high quality digital holograms do not require such high frame rates. In fact, applications such as 3D holographic lithography even require a stationary mask. Typical devices used for digital hologram reconstruction are based on spatial-light-modulator technology and this technology is great for reconstructing arbitrary holograms on the fly; however, it lacks the high spatial resolution achievable by its analog counterpart, holographic film. Analog holographic film is therefore the method of choice for reconstructing highquality static holograms. The challenge lies in taking a static, high-quality digitally calculated hologram and effectively writing it to holographic film. We have developed a theoretical system based on a tunable phase plate, an intensity adjustable high-coherence laser and a slip-stick based piezo rotation stage to effectively produce a digitally calculated hologram on analog film. The configuration reproduces the individual components, both the amplitude and phase, of the hologram in the Fourier domain. These Fourier components are then individually written on the holographic film after interfering with a reference beam. The system is analogous to writing angularly multiplexed plane waves with individual component phase control.

  5. Final report: High current capacity high temperature superconducting film based tape for high field magnets

    International Nuclear Information System (INIS)

    Ying Xin

    2000-01-01

    The primary goal of the program was to establish the process parameters for the continuous deposition of high quality, superconducting YBCO films on one meter lengths of buffered RABiTS tape using MOCVD and to characterize the potential utility of the resulting tapes in high field magnet applications

  6. Dielectric and acoustical high frequency characterisation of PZT thin films

    International Nuclear Information System (INIS)

    Conde, Janine; Muralt, Paul

    2010-01-01

    Pb(Zr, Ti)O 3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  7. Dielectric and acoustical high frequency characterisation of PZT thin films

    Science.gov (United States)

    Conde, Janine; Muralt, Paul

    2010-02-01

    Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  8. High mobility transparent conducting oxides for thin film solar cells

    International Nuclear Information System (INIS)

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  9. Highly Efficient and Reliable Transparent Electromagnetic Interference Shielding Film.

    Science.gov (United States)

    Jia, Li-Chuan; Yan, Ding-Xiang; Liu, Xiaofeng; Ma, Rujun; Wu, Hong-Yuan; Li, Zhong-Ming

    2018-04-11

    Electromagnetic protection in optoelectronic instruments such as optical windows and electronic displays is challenging because of the essential requirements of a high optical transmittance and an electromagnetic interference (EMI) shielding effectiveness (SE). Herein, we demonstrate the creation of an efficient transparent EMI shielding film that is composed of calcium alginate (CA), silver nanowires (AgNWs), and polyurethane (PU), via a facile and low-cost Mayer-rod coating method. The CA/AgNW/PU film with a high optical transmittance of 92% achieves an EMI SE of 20.7 dB, which meets the requirements for commercial shielding applications. A superior EMI SE of 31.3 dB could be achieved, whereas the transparent film still maintains a transmittance of 81%. The integrated efficient EMI SE and high transmittance are superior to those of most previously reported transparent EMI shielding materials. Moreover, our transparent films exhibit a highly reliable shielding ability in a complex service environment, with 98 and 96% EMI SE retentions even after 30 min of ultrasound treatment and 5000 bending cycles (1.5 mm radius), respectively. The comprehensive performance that is associated with the facile fabrication strategy imparts the CA/AgNW/PU film with great potential as an optimized EMI shielding material in emerging optoelectronic devices, such as flexible solar cells, displays, and touch panels.

  10. Bio-medical CMOS ICs

    CERN Document Server

    Yoo, Hoi-Jun

    2011-01-01

    This book is based on a graduate course entitled, Ubiquitous Healthcare Circuits and Systems, that was given by one of the editors. It includes an introduction and overview to biomedical ICs and provides information on the current trends in research.

  11. Colloidal silica films for high-capacity DNA arrays

    Science.gov (United States)

    Glazer, Marc Irving

    The human genome project has greatly expanded the amount of genetic information available to researchers, but before this vast new source of data can be fully utilized, techniques for rapid, large-scale analysis of DNA and RNA must continue to develop. DNA arrays have emerged as a powerful new technology for analyzing genomic samples in a highly parallel format. The detection sensitivity of these arrays is dependent on the quantity and density of immobilized probe molecules. We have investigated substrates with a porous, "three-dimensional" surface layer as a means of increasing the surface area available for the synthesis of oligonucleotide probes, thereby increasing the number of available probes and the amount of detectable bound target. Porous colloidal silica films were created by two techniques. In the first approach, films were deposited by spin-coating silica colloid suspensions onto flat glass substrates, with the pores being formed by the natural voids between the solid particles (typically 23nm pores, 35% porosity). In the second approach, latex particles were co-deposited with the silica and then pyrolyzed, creating films with larger pores (36 nm), higher porosity (65%), and higher surface area. For 0.3 mum films, enhancements of eight to ten-fold and 12- to 14-fold were achieved with the pure silica films and the films "templated" with polymer latex, respectively. In gene expression assays for up to 7,000 genes using complex biological samples, the high-capacity films provided enhanced signals and performed equivalently or better than planar glass on all other functional measures, confirming that colloidal silica films are a promising platform for high-capacity DNA arrays. We have also investigated the kinetics of hybridization on planar glass and high-capacity substrates. Adsorption on planar arrays is similar to ideal Langmuir-type adsorption, although with an "overshoot" at high solution concentration. Hybridization on high-capacity films is

  12. The response of Kodak EDR2 film in high-energy electron beams.

    Science.gov (United States)

    Gerbi, Bruce J; Dimitroyannis, Dimitri A

    2003-10-01

    Kodak XV2 film has been a key dosimeter in radiation therapy for many years. The advantages of the recently introduced Kodak EDR2 film for photon beam dosimetry have been the focus of several IMRT verification dosimetry publications. However, no description of this film's response to electron beams exists in the literature. We initiated a study to characterize the response and utility of this film for electron beam dosimetry. We exposed a series of EDR2 films to 6, 9, 12, 16, and 20 MeV electrons in addition to 6 and 18 MV x rays to develop standard characteristic curves. The linac was first calibrated to ensure that the delivered dose was known accurately. All irradiations were done at dmax in polystyrene for both photons and electrons, all films were from the same batch, and were developed at the same time. We also exposed the EDR2 films in a solid water phantom to produce central axis depth dose curves. These data were compared against percent depth dose curves measured in a water phantom using an IC-10 ion chamber, Kodak XV2 film, and a PTW electron diode. The response of this film was the same for both 6 and 18 MV x rays, but showed an apparent energy-dependent enhancement for electron beams. The response of the film also increased with increasing electron energy. This caused the percent depth dose curves using film to be shifted toward the surface compared to the ion chamber data.

  13. A High Gain-Bandwidth Product Distributed Transimpedance Amplifier IC for High-Speed Optical Transmission Using Low-Cost GaAs Technology.

    OpenAIRE

    Giannini, F.; Limiti, E.; Orengo, G.; Serino, A.; De Dominicis, M.

    2002-01-01

    This paper reports a distributed baseband transimpedance amplifier for optical links up to 10 Gb/s. The amplifier operates as a baseband amplifier with a transimpedance gain of 48 dB Ω and a DC-to-9 GHz bandwidth. Some innovative design techniques to improve gain-bandwidth performance at low and high frequency with an available low-cost GaAs MESFET technology have been developed.

  14. Micro-structuring of thick NdFeB films using high-power plasma etching for magnetic MEMS application

    International Nuclear Information System (INIS)

    Jiang, Yonggang; Fujita, Takayuki; Higuchi, Kohei; Maenaka, Kazusuke; Masaoka, Shingo; Uehara, Minoru

    2011-01-01

    This paper describes the micro-patterning of thick NdFeB magnetic films using a high-power plasma etching method. The effects of RF bias power and gas composition on the selectivity and etching rate are experimentally studied. A maximum etching rate of 60 nm min −1 is achieved with an inductively coupled plasma power of 500 W and a RF bias power of 200 W. A maximum selectivity of 0.26 between hard baked AZP4903 photoresist and NdFeB magnetic films is achieved when volumetric Cl 2 concentration is 2.5%. NdFeB micro-magnets as thick as 4.2 µm are achieved by using AZP4903 photoresist. Magnetic film as thick as 10 µm can be patterned by using SU-8 photoresist with a thickness of 100 µm as the mask. The magnetic property of patterned microstructures is characterized using a vibrating sample magnetometer and the magnetic field distribution is measured using a Hall effect sensor IC. The characterization results indicate that the patterned magnetic microstructures have a high magnetic remanance of 1.0 T, which is comparable to that of the non-patterned NdFeB films.

  15. Harmonic generation effect in high-Tc films

    International Nuclear Information System (INIS)

    Khare, Neeraj; Shrivastava, S.K.; Padmanabhan, V.P.N.; Khare, Sangeeta; Gupta, A.K.

    1997-01-01

    Harmonic generation in thick BPSCCO and thin YBCO films are reported. The application of an ac field (H ac > H c1 ) of frequency f causes the generation of odd harmonics of frequency (2n+1)f. The application of dc field in addition to the ac field causes the appearance of even harmonics also in the BPSCCO film. However, the appearance of even harmonics is not observed in YBCO film with high J c ∼ 1.6x10 6 A/cm 2 and appearance of second harmonic with small magnitude is observed in YBCO film with low J c ∼ 2x10 3 A/cm 2 . The variation of amplitudes of these harmonics are studied as a function of magnitude of ac and dc field and the results are explained in the framework of critical state model. A high-T c film magnetometer based on the measurement of the amplitude of second harmonic has been developed whose field sensitivity is ∼ 1.5x10 -8 T. (author)

  16. Bioinspired Superhydrophobic Highly Transmissive Films for Optical Applications.

    Science.gov (United States)

    Vüllers, Felix; Gomard, Guillaume; Preinfalk, Jan B; Klampaftis, Efthymios; Worgull, Matthias; Richards, Bryce; Hölscher, Hendrik; Kavalenka, Maryna N

    2016-11-01

    Inspired by the transparent hair layer on water plants Salvinia and Pistia, superhydrophobic flexible thin films, applicable as transparent coatings for optoelectronic devices, are introduced. Thin polymeric nanofur films are fabricated using a highly scalable hot pulling technique, in which heated sandblasted steel plates are used to create a dense layer of nano- and microhairs surrounding microcavities on a polymer surface. The superhydrophobic nanofur surface exhibits water contact angles of 166 ± 6°, sliding angles below 6°, and is self-cleaning against various contaminants. Additionally, subjecting thin nanofur to argon plasma reverses its surface wettability to hydrophilic and underwater superoleophobic. Thin nanofur films are transparent and demonstrate reflection values of less than 4% for wavelengths ranging from 300 to 800 nm when attached to a polymer substrate. Moreover, used as translucent self-standing film, the nanofur exhibits transmission values above 85% and high forward scattering. The potential of thin nanofur films for extracting substrate modes from organic light emitting diodes is tested and a relative increase of the luminous efficacy of above 10% is observed. Finally, thin nanofur is optically coupled to a multicrystalline silicon solar cell, resulting in a relative gain of 5.8% in photogenerated current compared to a bare photovoltaic device. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. High Energy Density Polymer Film Capacitors

    National Research Council Canada - National Science Library

    Boufelfel, Ali

    2006-01-01

    High-energy-density capacitors that are compact and light-weight are extremely valuable in a number of critical DoD systems that include portable field equipment, pulsed lasers, detection equipment...

  18. Aligned Carbon Nanotubes for High-Performance Films and Composites

    Science.gov (United States)

    Zhang, Liwen

    Carbon nanotubes (CNTs) with extraordinary properties and thus many potential applications have been predicted to be the best reinforcements for the next-generation multifunctional composite materials. Difficulties exist in transferring the most use of the unprecedented properties of individual CNTs to macroscopic forms of CNT assemblies. Therefore, this thesis focuses on two main goals: 1) discussing the issues that influence the performance of bulk CNT products, and 2) fabricating high-performance dry CNT films and composite films with an understanding of the fundamental structure-property relationship in these materials. Dry CNT films were fabricated by a winding process using CNT arrays with heights of 230 mum, 300 im and 360 mum. The structures of the as-produced films, as well as their mechanical and electrical properties were examined in order to find out the effects of different CNT lengths. It was found that the shorter CNTs synthesized by shorter time in the CVD furnace exhibited less structural defects and amorphous carbon, resulting in more compact packing and better nanotube alignment when made into dry films, thus, having better mechanical and electrical performance. A novel microcombing approach was developed to mitigate the CNT waviness and alignment in the dry films, and ultrahigh mechanical properties and exceptional electrical performance were obtained. This method utilized a pair of sharp surgical blades with microsized features at the blade edges as micro-combs to, for the first time, disentangle and straighten the wavy CNTs in the dry-drawn CNT sheet at single-layer level. The as-combed CNT sheet exhibited high level of nanotube alignment and straightness, reduced structural defects, and enhanced nanotube packing density. The dry CNT films produced by microcombing had a very high Young's modulus of 172 GPa, excellent tensile strength of 3.2 GPa, and unprecedented electrical conductivity of 1.8x10 5 S/m, which were records for CNT films or

  19. Sputtered thin films for high density tape recording

    NARCIS (Netherlands)

    Nguyen, L.T.

    This thesis describes the investigation of sputtered thin film media for high density tape recording. As discussed in Chapter 1, to meet the tremendous demand of data storage, the density of recording tape has to be increased continuously. For further increasing the bit density the key factors are:

  20. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.; Wang, Zhenwei; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured

  1. Electrochemically synthesized nanocrystalline spinel thin film for high performance supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Vinay [Carbon Technology Unit, Engineering Materials Division, National Physical Laboratory, New-Delhi, 110012 (India); Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan); Japan Science and Technology Agency, Kawaguchi-shi, Saitama, 332-0012 (Japan); Gupta, Shubhra; Miura, Norio [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga-shi, Fukuoka, 816-8580 (Japan)

    2010-06-01

    Spinels are not known for their supercapacitive nature. Here, we have explored electrochemically synthesized nanostructured NiCo{sub 2}O{sub 4} spinel thin-film electrode for electrochemical supercapacitors. The nanostructured NiCo{sub 2}O{sub 4} spinel thin film exhibited a high specific capacitance value of 580 F g{sup -1} and an energy density of 32 Wh kg{sup -1} at the power density of 4 kW kg{sup -1}, accompanying with good cyclic stability. (author)

  2. High temperature superconducting films by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Kadin, A.M.; Ballentine, P.H.

    1989-01-01

    The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

  3. Highly stable carbon-doped Cu films on barrierless Si

    International Nuclear Information System (INIS)

    Zhang, X.Y.; Li, X.N.; Nie, L.F.; Chu, J.P.; Wang, Q.; Lin, C.H.; Dong, C.

    2011-01-01

    Electrical resistivities and thermal stabilities of carbon-doped Cu films on silicon have been investigated. The films were prepared by magnetron sputtering using a Cu-C alloy target. After annealing at 400 deg. C for 1 h, the resistivity maintains a low level at 2.7 μΩ-cm and no Cu-Si reaction is detected in the film by X-ray diffraction (XRD) and transmission electron microscopy (TEM) observations. According to the secondary ion mass spectroscopy (SIMS) results, carbon is enriched near the interfacial region of Cu(C)/Si, and is considered responsible for the growth of an amorphous Cu(C)/Si interlayer that inhibits the Cu-Si inter-diffusion. Fine Cu grains, less than 100 nm, were present in the Cu(C) films after long-term and high-temperature annealings. The effect of C shows a combination of forming a self-passivated interface barrier layer and maintaining a fine-grained structure of Cu. A low current leakage measured on this Cu(C) film also provides further evidence for the carbon-induced diffusion barrier interlayer performance.

  4. A high power ZnO thin film piezoelectric generator

    Science.gov (United States)

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  5. PELE-IC test problems

    International Nuclear Information System (INIS)

    Gong, E.Y.; Alexander, E.E.; McMaster, W.H.; Quinones, D.F.

    1979-01-01

    This report provides prospective users of the Lawrence Livermore Laboratory (LLL) fluid-structure interaction computer code, PELE-IC, a variety of test problems for verifying the code on CDC 7600 computer systems at facilities external to the LLL environment. The test problems have been successfully run on CDC 7600 computers at the LLL and Lawrence Berkeley Laboratory (LBL) computer centers

  6. Highly controllable and green reduction of graphene oxide to flexible graphene film with high strength

    International Nuclear Information System (INIS)

    Wan, Wubo; Zhao, Zongbin; Hu, Han; Gogotsi, Yury; Qiu, Jieshan

    2013-01-01

    Graphical abstract: Highly controllable and green reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant. Self-assembly of the as-made CCG sheets results in a flexible CCG film, of which the tensile strength strongly depends on the deoxygenation degree of graphene sheets. - Highlights: • Graphene was synthesized by an effective and environmentally friendly approach. • We introduced a facile X-ray diffraction analysis method to investigate the reduction process from graphene oxide to graphene. • Flexible graphene films were prepared by self-assembly of the graphene sheets. • The strength of the graphene films depends on the reduction degree of graphene. - Abstract: Graphene film with high strength was fabricated by the assembly of graphene sheets derived from graphene oxide (GO) in an effective and environmentally friendly approach. Highly controllable reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant, in which the reduction process was monitored by XRD analysis and UV–vis absorption spectra. Self-assembly of the as-made CCG sheets results in a flexible CCG film. This method may open an avenue to the easy and scalable preparation of graphene film with high strength which has promising potentials in many fields where strong, flexible and electrically conductive films are highly demanded

  7. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  8. Dielectric and acoustical high frequency characterisation of PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Conde, Janine; Muralt, Paul, E-mail: janine.conde@epfl.ch [Department of Materials Science, EPFL (Switzerland)

    2010-02-15

    Pb(Zr, Ti)O{sub 3} (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {l_brace}100{r_brace} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  9. Preparation and characterization of high-Tc superconducting thin films with high critical current densities

    International Nuclear Information System (INIS)

    Vase, P.

    1991-08-01

    The project was carried out in relation to possible cable and electronics applications of high-T c materials. Laser ablation was used as the deposition technique because of its stoichiometry conservation. Films were made in the YBa 2 Cu 3 O 7 compound due to its relatively simple stoichiometry compared to other High-T c compounds. Much attention was paid to the critical current density. A very high critical current density was reached. By using texture analysis by X-ray diffraction, it was found that films with high critical current densities were epitaxial, while films with low critical current densities contained several crystalline orientations. Four techniques for patterning the films were used - photo lithography and wet etch, laser ablation lithography, laser writing and electron beam lithography and ion milling. Sub-micron patterning has been demonstrated without degradation of the superconducting properties. The achieved patterning resolution is sufficient for preparation of many superconducting components. (AB)

  10. High energy density capacitors fabricated by thin film technology

    International Nuclear Information System (INIS)

    Barbee, T W; Johnson, G W; Wagner, A V.

    1999-01-01

    Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

  11. Application of a Coated Film Catalyst Layer Model to a High Temperature Polymer Electrolyte Membrane Fuel Cell with Low Catalyst Loading Produced by Reactive Spray Deposition Technology

    Directory of Open Access Journals (Sweden)

    Timothy D. Myles

    2015-10-01

    Full Text Available In this study, a semi-empirical model is presented that correlates to previously obtained experimental overpotential data for a high temperature polymer electrolyte membrane fuel cell (HT-PEMFC. The goal is to reinforce the understanding of the performance of the cell from a modeling perspective. The HT-PEMFC membrane electrode assemblies (MEAs were constructed utilizing an 85 wt. % phosphoric acid doped Advent TPS® membranes for the electrolyte and gas diffusion electrodes (GDEs manufactured by Reactive Spray Deposition Technology (RSDT. MEAs with varying ratios of PTFE binder to carbon support material (I/C ratio were manufactured and their performance at various operating temperatures was recorded. The semi-empirical model derivation was based on the coated film catalyst layer approach and was calibrated to the experimental data by a least squares method. The behavior of important physical parameters as a function of I/C ratio and operating temperature were explored.

  12. High magnetic field properties of Fe-pnictide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kurth, Fritz

    2015-11-20

    The recent discovery of high-temperature superconductivity in Fe-based materials triggered worldwide efforts to investigate their fundamental properties. Despite a lot of similarities to cuprates and MgB{sub 2}, important differences like near isotropic behaviour in contrast to cuprates and the peculiar pairing symmetry of the order parameter (OP) have been reported. The OP symmetry of Fe-based superconductors (FBS) was theoretically predicted to be of so-called s± state prior to various experimental works. Still, most of the experimental results favour the s± scenario; however, definitive evidence has not yet been reported. Although no clear understanding of the superconducting mechanisms yet exists, potential applications such as high-field magnets and Josephson devices have been explored. Indeed, a lot of reports about FBS tapes, wires, and even SQUIDs have been published to this date. In this thesis, the feasibility of high-field magnet applications of FBS is addressed by studying their transport properties, involving doped BaFe{sub 2}As{sub 2} (Ba-122) and LnFeAs(O,F) [Ln=Sm and Nd]. Particularly, it is important to study physical properties in a sample form (i.e. thin films) that is close to the conditions found in applications. However, the realisation of epitaxial FBS thin films is not an easy undertaking. Recent success in growing epitaxial FBS thin films opens a new avenue to delve into transport critical current measurements. The information obtained through this research will be useful for exploring high-field magnet applications. This thesis consists of 7 chapters: Chapter 1 describes the motivation of this study, the basic background of superconductivity, and a brief summary of the thin film growth of FBS. Chapter 2 describes experimental methods employed in this study. Chapter 3 reports on the fabrication of Co-doped Ba-122 thin films on various substrates. Particular emphasis lies on the discovery of fluoride substrates to be beneficial for

  13. CMOS Analog IC Design: Fundamentals

    OpenAIRE

    Bruun, Erik

    2018-01-01

    This book is intended for use as the main textbook for an introductory course in CMOS analog integrated circuit design. It is aimed at electronics engineering students who have followed basic courses in mathematics, physics, circuit theory, electronics and signal processing. It takes the students directly from a basic level to a level where they can start working on simple analog IC design projects or continue their studies using more advanced textbooks in the field. A distinct feature of thi...

  14. High performance thin-film composite forward osmosis membrane.

    Science.gov (United States)

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A; Schiffman, Jessica D; Elimelech, Menachem

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 mum) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m(2-)h(-1), while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution.

  15. High Performance Thin-Film Composite Forward Osmosis Membrane

    KAUST Repository

    Yip, Ngai Yin

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 μm) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m2-h-1, while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution. © 2010 American Chemical Society.

  16. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    Energy Technology Data Exchange (ETDEWEB)

    None

    2008-06-30

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology

  17. The Implications Related to Different IC, Different Projects and Different Thinking Addressing the Common Core of IC

    DEFF Research Database (Denmark)

    Lindgren, Peter; Saghaug, Kristin Margrethe

    2009-01-01

    challenge the development of IC: - The IC at the organizational level seems to diminish when innovation gets highly dispersed and is operated outside the core of the organization - The attractiveness of the organization to different ICA, which is one fundament to sustainable and successful innovation, seems...... to fall when the IC at the organizational core level diminishes The objective of this paper is therefore to understand 1) How the IC at the organizational core level may continue to be developed, when at the same time innovation is taking place in dispersed groups and projects. 2) How to motivate...... the different ICA´s to bring learning and knowledge back to the core with the purpose to develop IC at the organizational core level....

  18. Fabrication of highly ordered nanoporous alumina films by stable high-field anodization

    International Nuclear Information System (INIS)

    Li Yanbo; Zheng Maojun; Ma Li; Shen Wenzhong

    2006-01-01

    Stable high-field anodization (1500-4000 A m -2 ) for the fabrication of highly ordered porous anodic alumina films has been realized in a H 3 PO 4 -H 2 O-C 2 H 5 OH system. By maintaining the self-ordering voltage and adjusting the anodizing current density, high-quality self-ordered alumina films with a controllable inter-pore distance over a large range are achieved. The high anodizing current densities lead to high-speed film growth (4-10 μm min -1 ). The inter-pore distance is not solely dependent on the anodizing voltage, but is also influenced by the anodizing current density. This approach is simple and cost-effective, and is of great value for applications in diverse areas of nanotechnology

  19. Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C., E-mail: gadkari@barc.gov.in

    2016-02-21

    Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the <200> direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

  20. Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

    International Nuclear Information System (INIS)

    Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C.

    2016-01-01

    Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

  1. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  2. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W.; Ryu, Koungmin; Thompson, Mark E.; Zhou, Chongwu

    2010-01-01

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD

  3. Computing fundamentals IC3 edition

    CERN Document Server

    Wempen, Faithe

    2014-01-01

    Kick start your journey into computing and prepare for your IC3 certification With this essential course book you'll be sending e-mails, surfing the web and understanding the basics of computing in no time. Written by Faithe Wempen, a Microsoft Office Master Instructor and author of more than 120 books, this complete guide to the basics has been tailored to provide comprehensive instruction on the full range of entry-level computing skills. It is a must for students looking to move into almost any profession, as entry-level computing courses have become a compulsory requirement in the modern w

  4. A high-efficiency solution-deposited thin-film photovoltaic device

    Energy Technology Data Exchange (ETDEWEB)

    Mitzi, David B; Yuan, Min; Liu, Wei; Chey, S Jay; Schrott, Alex G [IBM T. J. Watson Research Center, Yorktown Heights, NY (United States); Kellock, Andrew J; Deline, Vaughn [IBM Almaden Research Center, San Jose, CA (United States)

    2008-10-02

    High-quality Cu(In,Ga)Se{sub 2} (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination). (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  5. SEM probe of IC radiation sensitivity

    Science.gov (United States)

    Gauthier, M. K.; Stanley, A. G.

    1979-01-01

    Scanning Electron Microscope (SEM) used to irradiate single integrated circuit (IC) subcomponent to test for radiation sensitivity can localize area of IC less than .03 by .03 mm for determination of exact location of radiation sensitive section.

  6. Ultrahigh hardness and high electrical resistivity in nano-twinned, nanocrystalline high-entropy alloy films

    Science.gov (United States)

    Huo, Wenyi; Liu, Xiaodong; Tan, Shuyong; Fang, Feng; Xie, Zonghan; Shang, Jianku; Jiang, Jianqing

    2018-05-01

    Nano-twinned, nanocrystalline CoCrFeNi high-entropy alloy films were produced by magnetron sputtering. The films exhibit a high hardness of 8.5 GPa, the elastic modulus of 161.9 GPa and the resistivity as high as 135.1 μΩ·cm. The outstanding mechanical properties were found to result from the resistance of deformation created by nanocrystalline grains and nano-twins, while the electrical resistivity was attributed to the strong blockage effect induced by grain boundaries and lattice distortions. The results lay a solid foundation for the development of advanced films with structural and functional properties combined in micro-/nano-electronic devices.

  7. Bibliography of high-T/sub c/ superconducting films

    International Nuclear Information System (INIS)

    Talvacchio, J.

    1989-01-01

    This document represents an effort to make bibliographic information on high-T/sub c/ superconductor films available to those who cannot access the on-line database at the Westinghouse R and D Center. The database contains a growing list of references -- approaching 5000 -- each of which is identified by a set of two-letter keywords. The database is used the same way as as INSPEC's, but its fixed set of standard keywords enables the user to obtain a complete list of references on keyworded topics. Since a single keyword (or search term) such as ''sputtering'' creates a bibliography that is too long for practical use, the database is used most effectively by combining a series of keywords using Boolean algebra to identify a handful of relevant references. The structure of this document is intended to present the subset of papers concerning high-T/sub c/ films (725 papers) in a compact format as a substitute for on-line searches. Rather than listing separate bibliographies for each of the 185 keywords, a single list of all the references is contained in Section 6, and indices based on the keywords are contained in Sections 3--5. This report is a true bibliography and does not contain any informative text. 725 refs

  8. Growth and characterization of high quality ZnS thin films by RF sputtering

    Science.gov (United States)

    Mukherjee, C.; Rajiv, K.; Gupta, P.; Sinha, A. K.; Abhinandan, L.

    2012-06-01

    High optical quality ZnS films are deposited on glass and Si wafer by RF sputtering from pure ZnS target. Optical transmittance, reflectance, ellipsometry, FTIR and AFM measurements are carried out. Effect of substrate temperature and chamber baking for long duration on film properties have been studied. Roughness of the films as measured by AFM are low (1-2Å).

  9. A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

    Science.gov (United States)

    Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

    2015-05-01

    This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

  10. High intensification screen-film systems in thorax radiography: a clinical comparison

    International Nuclear Information System (INIS)

    Schaefer, C.B.; Sokiranski, R.; Claussen, C.D.

    1995-01-01

    Objective: The quality of chest images was evaluated for a conventional screen-film system, a new asymmetric screen-film system, and a new uv screen-film system. Materials and Methods: 138 Chest radiographs (69 p.a., 69 lateral) obtained with three different high intensification screen-film combinations were compared. Film density and film contrast were measured. Three readers graded the image quality according to 16 criteria. Results: The asymmetric film-screen combination Insight HC showed the lowest film contrast, the best exposure range, and a elevated film density in the mediastinal area. The asymmetric screen-film system was ranked by all three observers as being substantially better in image quality. Conclusion: Compared to conventional screen-film systems, the new screen-film systems can improve the image quality of chest radiographs. Therefore, the new high intensification screen-film combinations can be used as a low cost alternative to the Amber technique and digital radiography. (orig.) [de

  11. Spitzer Observations Of IC 2118

    Science.gov (United States)

    2010-09-01

    Micron All-Sky Survey ( 2MASS ; Skrutskie et al. 2006) photometric data in an effort to segregate YSOs from background galaxies. While one previously known T...Spectral Typea Other names IRAS 04591−0856 05 01 30.2 −08 52 14 . . . HHL 17, G13 2MASS 05020630−0850467 05 02 06.3 −08 50 47 M2 IV . . . RXJ 0502.4−0744b...05 02 20.8 −07 44 10 . . . 2MASS 05022084−0744099 2MASS 05060574−0646151c 05 06 05.7 −06 46 15 G8: (May not be a member of IC 2118; see Kun et al

  12. Charmed muons in ice. Measurement of the high-energetic atmospheric energy spectrum with IceCube in the detector configuration IC86-1

    International Nuclear Information System (INIS)

    Fuchs, Tomasz

    2016-01-01

    In this thesis the flux of high-energy muons in the energy regime from 10 TeV to 1 PeV is reconstructed and analyzed using data collected with the IceCube detector in the time span 13.05.2011 to 15.05.2012. From a data set containing muon bundles only those events are selected which contain a muon that is energetically dominating the others in the bundle. For the separation a Random Forest model is applied, resulting in a data set of high-energy muons with an efficiency of (40.8±0.6) % and a purity of (93.1±0.4) %. Attributes considered in the separation are selected by the mRMR algorithm. The energy spectrum of muons is reconstructed with a regularized unfolding using the software TRUEE. The hypothesis of a prompt and a conventional component of atmospheric muons results in flux normalizations of N conv. =1.03±0.06 and N prompt =1.59±1.57. Due to the large uncertainty of the prompt component, the hypothesis of a pure conventional flux cannot be excluded. Using these normalizations, it is possible to determine if the measured high-energy neutrino flux above 60 TeV is of atmospheric origin. The p-value for this hypothesis is found to be 0.045, which indicates the need of an astrophysical component to explain the excess at high energies.

  13. Graphene-based supercapacitor with carbon nanotube film as highly efficient current collector

    International Nuclear Information System (INIS)

    Notarianni, Marco; Liu, Jinzhang; Motta, Nunzio; Mirri, Francesca; Pasquali, Matteo

    2014-01-01

    Flexible graphene-based thin film supercapacitors were made using carbon nanotube (CNT) films as current collectors and graphene films as electrodes. The graphene sheets were produced by simple electrochemical exfoliation, while the graphene films with controlled thickness were prepared by vacuum filtration. The solid-state supercapacitor was made by using two graphene/CNT films on plastic substrates to sandwich a thin layer of gelled electrolyte. We found that the thin graphene film with thickness <1 μm can greatly increase the capacitance. Using only CNT films as electrodes, the device exhibited a capacitance as low as ∼0.4 mF cm −2 , whereas by adding a 360 nm thick graphene film to the CNT electrodes led to a ∼4.3 mF cm −2 capacitance. We experimentally demonstrated that the conductive CNT film is equivalent to gold as a current collector while it provides a stronger binding force to the graphene film. Combining the high capacitance of the thin graphene film and the high conductivity of the CNT film, our devices exhibited high energy density (8–14 Wh kg −1 ) and power density (250–450 kW kg −1 ). (paper)

  14. Thin film production of ceramic high-Tc-superconductors (targets)

    International Nuclear Information System (INIS)

    1992-01-01

    Presently high-quality thin superconducting films having high T c 's may prepared by the sputtering technique. However, a large-area coating is required for an industrial application. One requirement is the availability of sputter targets with controlled and reproducible properties. By means of basic experiments with respect to powder processing, shaping and the densification process superconducting targets up to 200 mm in diameter were prepared in the Y-Ba-Cu-O- system. Additionally, targets from other systems with different geometries (e.g. ring targets) were prepared. These targets were submitted to the project partners as well as to other institutes and companies. During the course of this project the foundations for an industrial-type coating of large-area substrates were elaborated. (orig.). 9 refs., 5 tabs., 15 figs [de

  15. Preparation of high-pressure phase boron nitride films by physical vapor deposition

    CERN Document Server

    Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

    2002-01-01

    The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

  16. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  17. High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sang Woo [Nano-Materials Research Center, Korea Institute of Science and Technology, 39-1 Haweoulgog-dong, Sungbuk-gu, Seoul 136-791 (Korea, Republic of)]. E-mail: swkim@kist.re.kr; Yoon, Chong S. [Division of Advanced Materials Science, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2007-09-15

    Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization.

  18. High-frequency electromagnetic properties of soft magnetic metal-polyimide hybrid thin films

    International Nuclear Information System (INIS)

    Kim, Sang Woo; Yoon, Chong S.

    2007-01-01

    Although there are a lot of demands for suppression of unwanted high-frequency electromagnetic noise in highly integrated electronic devices such as mobile phones and notebook computers, electromagnetic thin films that effectively work in the high-frequency range have still been underdeveloped. Soft magnetic metal-polyimide (PI) hybrid films with high electrical resistivity were prepared by thermal imidization and selective oxidation between the metal alloy layer and polyamic acid (PAA) layer. Electromagnetic properties of the hybrid thin films in the radio-frequency range were characterized by using the microstrip line method and were correlated with their material parameters. Although anisotropy field of the CoFe/NiFe hybrid film was two times lower than that of the NiFe hybrid film, the saturation magnetization of the CoFe/NiFe hybrid film was three times higher than that of the NiFe hybrid film. The CoFe/NiFe hybrid film showed higher power loss in the frequency range of 3-6 GHz compared to the NiFe hybrid film. The high power loss of the CoFe/NiFe hybrid film was caused by high relative permeability and high ferromagnetic resonance (FMR) frequency due to high saturation magnetization

  19. Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Patel, R.; Kahol, P.K.

    2009-01-01

    Titanium-doped cadmium oxide thin films were deposited on quartz substrate by pulsed laser deposition technique. The effect of substrate temperature on structural, optical and electrical properties was studied. The films grown at high temperature show (2 0 0) preferred orientation, while films grown at low temperature have both (1 1 1) and (2 0 0) orientation. These films are highly transparent (63-79%) in visible region, and transmittance of the films depends on growth temperature. The band gap of the films varies from 2.70 eV to 2.84 eV for various temperatures. It is observed that resistivity increases with growth temperature after attaining minimum at 150 deg. C, while carrier concentration continuously decreases with temperature. The low resistivity, high transmittance and wide band gap titanium-doped CdO films could be an excellent candidate for future optoelectronic and photovoltaic applications.

  20. Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Horstmann, F.; Sittinger, V.; Szyszka, B.

    2009-01-01

    In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. ] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min kW. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 deg. C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art ITO films which were obtained at optimized direct current magnetron sputtering conditions

  1. The Ring Counter (RCo): A high resolution IC-Si-CsI(Tl) device for heavy ion reaction studies at 10-30 MeV/A

    International Nuclear Information System (INIS)

    Moroni, A.; Bruno, M.; Bardelli, L.; Barlini, S.; Brambilla, S.; Casini, G.; Cavaletti, R.; Chiari, M.; Cortesi, A.; D'Agostino, M.; De Sanctis, J.; Geraci, E.; Giordano, G.; Giussani, A.; Gramegna, F.; Guiot, B.; Kravchuk, V.; Lanchais, A.; Margagliotti, G.V.; Nannini, A.; Ordine, A.; Piantelli, S.; Vannini, G.; Vannucci, L.

    2006-01-01

    An annular detector (Ring Counter, RCo) is presented, which has been designed and built to detect and identify in mass and charge light charged particles and fragments with very low energy thresholds and high energy resolution. It complements the GARFIELD apparatus, operating at INFN Laboratori Nazionali di Legnaro, to detect the forward emitted products of nuclear heavy ion reactions. It consists of eight sectors of a three-stage telescope, each one formed by an ionization chamber followed by eight strips of a silicon detector and by two CsI(Tl) scintillators. Construction features and performances are described and discussed in details

  2. Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

    2013-01-01

    Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered films • TiO 2 films with high refractive index are obtained without post-growth annealing

  3. Mod 1 ICS TI Report: ICS Conversion of a 140% HPGe Detector

    Energy Technology Data Exchange (ETDEWEB)

    Bounds, John Alan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-07-05

    This report evaluates the Mod 1 ICS, an electrically cooled 140% HPGe detector. It is a custom version of the ORTEC Integrated Cooling System (ICS) modified to make it more practical for us to use in the field. Performance and operating characteristics of the Mod 1 ICS are documented, noting both pros and cons. The Mod 1 ICS is deemed a success. Recommendations for a Mod 2 ICS, a true field prototype, are provided.

  4. Scalable IC Platform for Smart Cameras

    Directory of Open Access Journals (Sweden)

    Harry Broers

    2005-08-01

    Full Text Available Smart cameras are among the emerging new fields of electronics. The points of interest are in the application areas, software and IC development. In order to reduce cost, it is worthwhile to invest in a single architecture that can be scaled for the various application areas in performance (and resulting power consumption. In this paper, we show that the combination of an SIMD (single-instruction multiple-data processor and a general-purpose DSP is very advantageous for the image processing tasks encountered in smart cameras. While the SIMD processor gives the very high performance necessary by exploiting the inherent data parallelism found in the pixel crunching part of the algorithms, the DSP offers a friendly approach to the more complex tasks. The paper continues to motivate that SIMD processors have very convenient scaling properties in silicon, making the complete, SIMD-DSP architecture suitable for different application areas without changing the software suite. Analysis of the changes in power consumption due to scaling shows that for typical image processing tasks, it is beneficial to scale the SIMD processor to use the maximum level of parallelism available in the algorithm if the IC supply voltage can be lowered. If silicon cost is of importance, the parallelism of the processor should be scaled to just reach the desired performance given the speed of the silicon.

  5. Studying Radiation Tolerant ICs for LHC

    CERN Multimedia

    Faccio, F; Snoeys, W; Campbell, M; Casas-cubillos, J; Gomes, P

    2002-01-01

    %title\\\\ \\\\In the recent years, intensive work has been carried out on the development of custom ICs for the readout electronics for LHC experiments. As far as radiation hardness is concerned, attention has been focussed on high total dose applications, mainly for the tracker systems. The dose foreseen in this inner region is estimated to be higher than 1~Mrad/year. In the framework of R&D projects (RD-9 and RD-20) and in the ATLAS and CMS experiments, the study of different radiation hard processes has been pursued and good contacts with the manufacturers have been established. The results of these studies have been discussed during the Microelectronics User Group (MUG) rad-hard meetings, and now some HEP groups are working to develop radiation hard ICs for the LHC experiments on some of the available rad-hard processes.\\\\ \\\\In addition, a lot of the standard commercial electronic components and ASICs which are planned to be installed near the LHC machine and in the detectors will receive total doses in ...

  6. Ultra-high current density thin-film Si diode

    Science.gov (United States)

    Wang, Qi [Littleton, CO

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  7. Electron curing for high speed paper, film and foil converting

    International Nuclear Information System (INIS)

    Nablo, S.V.; Tripp, E.P.

    1979-01-01

    The status of self-shielded, compact electron processors for flexible web converting applications is reviewed. The uses of these units for a variety of laminating applications are described, with emphasis on the application techniques appropriate for low weight, (1 to 2 gm/m 2 ) 100% convertible adhesives. Performance data for electron cured adhesives with polyester/polyethylene systems is presented and compared with conventional urethane systems. The unique surface features of electron cured gravure coatings applied and cured at high speed are discussed, with reference to both paper and film substrates. An important advantage of electron curing of buried adhesive layers is the process quality control permitted by this 'all-electric' system. The performance characteristics of curing atmosphere control (inerting) for coatings are reviewed. Industrial experience with these processors has shown that effective inerting of coated flexible webs at speeds to 250 m/minute is both practical and economical. (author)

  8. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.

    2015-03-09

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

  9. High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

    Science.gov (United States)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-08-01

    High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

  10. Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures

    International Nuclear Information System (INIS)

    Hezam, M.; Tabet, N.; Mekki, A.

    2010-01-01

    ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.

  11. Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films

    International Nuclear Information System (INIS)

    Ohdaira, Keisuke; Tomura, Naohito; Ishii, Shohei; Matsumura, Hideki

    2011-01-01

    We investigate residual forms of hydrogen (H) atoms such as bonding configuration in poly-crystalline silicon (poly-Si) films formed by the flash-lamp-induced crystallization of catalytic chemical vapor deposited (Cat-CVD) a-Si films. Raman spectroscopy reveals that at least part of H atoms in flash-lamp-crystallized (FLC) poly-Si films form Si-H 2 bonds as well as Si-H bonds with Si atoms even using Si-H-rich Cat-CVD a-Si films, which indicates the rearrangement of H atoms during crystallization. The peak desorption temperature during thermal desorption spectroscopy (TDS) is as high as 900 o C, similar to the reported value for bulk poly-Si.

  12. High dose-rate brachytherapy source position quality assurance using radiochromic film

    International Nuclear Information System (INIS)

    Evans, M.D.C.; Devic, S.; Podgorsak, E.B.

    2007-01-01

    Traditionally, radiographic film has been used to verify high-dose-rate brachytherapy source position accuracy by co-registering autoradiographic and diagnostic images of the associated applicator. Filmless PACS-based clinics that do not have access to radiographic film and wet developers may have trouble performing this quality assurance test in a simple and practical manner. We describe an alternative method for quality assurance using radiochromic-type film. In addition to being easy and practical to use, radiochromic film has some advantages in comparison with traditional radiographic film when used for HDR brachytherapy quality assurance

  13. High-frequency properties of superconducting Y-Ba-Cu-oxide thin films

    International Nuclear Information System (INIS)

    Ramakrishnan, E.S.; Su, M.; Howng, W.

    1992-01-01

    rf and microwave properties of superconducting YBa 2 Cu 3 O 7-x thin films were measured and analyzed using a coplanar resonator structure. The films were developed by sequential electron-beam evaporation of the metals followed by postanneal processing. dc properties of the films were obtained from resistance-temperature and current-voltage measurements to evaluate the transition temperature and current densities. High-frequency properties were measured from 70 to 10 K and in the frequency range 1--3 GHz to determine the film characteristics as compared to pure copper films on the same substrates

  14. Droplet deposition measurement with high-speed camera and novel high-speed liquid film sensor with high spatial resolution

    International Nuclear Information System (INIS)

    Damsohn, M.; Prasser, H.-M.

    2011-01-01

    Highlights: → Development of a sensor for time- and space-resolved droplet deposition in annular flow. → Experimental measurement of droplet deposition in horizontal annular flow to compare readings of the sensor with images of a high-speed camera when droplets are depositing unto the liquid film. → Self-adaptive signal filter based on autoregression to separate droplet impacts in the sensor signal from waves of liquid films. - Abstract: A sensor based on the electrical conductance method is presented for the measurement of dynamic liquid films in two-phase flow. The so called liquid film sensor consists of a matrix with 64 x 16 measuring points, a spatial resolution of 3.12 mm and a time resolution of 10 kHz. Experiments in a horizontal co-current air-water film flow were conducted to test the capability of the sensor to detect droplet deposition from the gas core onto the liquid film. The experimental setup is equipped with the liquid film sensor and a high speed camera (HSC) recording the droplet deposition with a sampling rate of 10 kHz simultaneously. In some experiments the recognition of droplet deposition on the sensor is enhanced by marking the droplets with higher electrical conductivity. The comparison between the HSC and the sensor shows, that the sensor captures the droplet deposition above a certain droplet diameter. The impacts of droplet deposition can be filtered from the wavy structures respectively conductivity changes of the liquid film using a filter algorithm based on autoregression. The results will be used to locally measure droplet deposition e.g. in the proximity of spacers in a subchannel geometry.

  15. Influence of surface oxide films on the SCC of stainless steel in high temperature water

    Energy Technology Data Exchange (ETDEWEB)

    Tani, Junichi; Kato, Shunji; Hirano, Hideo [Central Research Inst. of Electric Power Industry, Komae, Tokyo (Japan). Komae Research Lab; Kushida, H.

    2000-06-01

    Effect of pre-filming conditions on the SCC susceptibility of stainless steels (SS) was investigated by SSRT and electrochemical measurement in high temperature water. The IGSCC ratio of a specimen with the oxide film formed in hydrogen-saturated water (R film specimen) was higher than that of a specimen with the oxide film formed in air-saturated water (O film specimen). When the pre-filmed specimens were coupled with a Cr-depleted SS that simulated weld-heat-affected zones, the galvanic couple between the R film specimen and Cr-depleted SS showed higher corrosion current than the couple between the O film specimen and Cr-depleted SS. The film thickness of the Cr-depleted SS was thinner in the couple with the R film specimen after the test. These results clearly show that the SCC susceptibility of R film specimen was higher than that of the O film specimen, in accordance with the SSRT results. (author)

  16. Wafer level 3-D ICs process technology

    CERN Document Server

    Tan, Chuan Seng; Reif, L Rafael

    2009-01-01

    This book focuses on foundry-based process technology that enables the fabrication of 3-D ICs. The core of the book discusses the technology platform for pre-packaging wafer lever 3-D ICs. However, this book does not include a detailed discussion of 3-D ICs design and 3-D packaging. This is an edited book based on chapters contributed by various experts in the field of wafer-level 3-D ICs process technology. They are from academia, research labs and industry.

  17. Preparation of high quality superconducting thin MgB2 films for electronics

    International Nuclear Information System (INIS)

    Surdu, Andrei; Zdravkov, Vladimir; Sidorenko, Anatolie; Rossolenko, Anna; Ryazanov, Valerii; Bdikin, Igor; Kroemer, Oliver; Nold, Eberhard; Koch, Thomas; Schimmel, Thomas

    2007-01-01

    In this work we report the growth of high-Tc MgB 2 smooth films which are prepared in a two-step process: 1) deposition of the precursor films and 2) their annealing in Mg vapor with a specially designed, reusable reactor. Our method opens perspectives for the use of MgB 2 films in microelectronics, especially for high-frequency applications. (authors)

  18. High-precision cutting of polyimide film using femtosecond laser for the application in flexible electronics

    Science.gov (United States)

    Ganin, D. V.; Lapshin, K. E.; Obidin, A. Z.; Vartapetov, S. K.

    2018-01-01

    The experimental results of cutting a polyimide film on the optical glass substrate by means of femtosecond lasers are given. Two modes of laser cutting of this film without damages to a glass base are determined. The first is the photo graphitization using a high repetition rate femtosecond laser. The second is ablative, under the effect of femtosecond laser pulses with high energy and low repetition rate. Cutting of semiconductor chips formed on the polyimide film surface is successfully demonstrated.

  19. Effects of structural modification via high-pressure annealing on solution-processed InGaO films and thin-film transistors

    International Nuclear Information System (INIS)

    Rim, You Seung; Choi, Hyung-Wook; Kim, Kyung Hwan; Kim, Hyun Jae

    2016-01-01

    We investigated the structural modification of solution-processed nanocrystalline InGaO films via high-pressure annealing and fabricated thin-film transistors. The grain size of InGaO films annealed in the presence of oxygen under high pressure was significantly changed compared the films annealed without high pressure ambient. The O1s XPS peak distribution of InGaO films annealed under high pressure at 350 °C showed a peak similar to that of the non-pressure annealed film at 500 °C. The high-pressure annealing process promoted the elimination of organic residues and dehydroxylation of the metal hydroxide (M–OH) complex. We confirmed the improved device performance of high-pressure annealed InGaO-based thin-film transistors owing to the reduction in charge-trap density. (paper)

  20. Evaluation of Gafchromic EBT-XD film, with comparison to EBT3 film, and application in high dose radiotherapy verification

    Science.gov (United States)

    Palmer, Antony L.; Dimitriadis, Alexis; Nisbet, Andrew; Clark, Catharine H.

    2015-11-01

    There is renewed interest in film dosimetry for the verification of dose delivery of complex treatments, particularly small fields, compared to treatment planning system calculations. A new radiochromic film, Gafchromic EBT-XD, is available for high-dose treatment verification and we present the first published evaluation of its use. We evaluate the new film for MV photon dosimetry, including calibration curves, performance with single- and triple-channel dosimetry, and comparison to existing EBT3 film. In the verification of a typical 25 Gy stereotactic radiotherapy (SRS) treatment, compared to TPS planned dose distribution, excellent agreement was seen with EBT-XD using triple-channel dosimetry, in isodose overlay, maximum 1.0 mm difference over 200-2400 cGy, and gamma evaluation, mean passing rate 97% at 3% locally-normalised, 1.5 mm criteria. In comparison to EBT3, EBT-XD gave improved evaluation results for the SRS-plan, had improved calibration curve gradients at high doses, and had reduced lateral scanner effect. The dimensions of the two films are identical. The optical density of EBT-XD is lower than EBT3 for the same dose. The effective atomic number for both may be considered water-equivalent in MV radiotherapy. We have validated the use of EBT-XD for high-dose, small-field radiotherapy, for routine QC and a forthcoming multi-centre SRS dosimetry intercomparison.

  1. Evaluation of Gafchromic EBT-XD film, with comparison to EBT3 film, and application in high dose radiotherapy verification

    International Nuclear Information System (INIS)

    Palmer, Antony L; Dimitriadis, Alexis; Nisbet, Andrew; Clark, Catharine H

    2015-01-01

    There is renewed interest in film dosimetry for the verification of dose delivery of complex treatments, particularly small fields, compared to treatment planning system calculations. A new radiochromic film, Gafchromic EBT-XD, is available for high-dose treatment verification and we present the first published evaluation of its use. We evaluate the new film for MV photon dosimetry, including calibration curves, performance with single- and triple-channel dosimetry, and comparison to existing EBT3 film. In the verification of a typical 25 Gy stereotactic radiotherapy (SRS) treatment, compared to TPS planned dose distribution, excellent agreement was seen with EBT-XD using triple-channel dosimetry, in isodose overlay, maximum 1.0 mm difference over 200–2400 cGy, and gamma evaluation, mean passing rate 97% at 3% locally-normalised, 1.5 mm criteria. In comparison to EBT3, EBT-XD gave improved evaluation results for the SRS-plan, had improved calibration curve gradients at high doses, and had reduced lateral scanner effect. The dimensions of the two films are identical. The optical density of EBT-XD is lower than EBT3 for the same dose. The effective atomic number for both may be considered water-equivalent in MV radiotherapy. We have validated the use of EBT-XD for high-dose, small-field radiotherapy, for routine QC and a forthcoming multi-centre SRS dosimetry intercomparison. (paper)

  2. Alkyl chitosan film-high strength, functional biomaterials.

    Science.gov (United States)

    Lu, Li; Xing, Cao; Xin, Shen; Shitao, Yu; Feng, Su; Shiwei, Liu; Fusheng, Liu; Congxia, Xie

    2017-11-01

    Biofilm with strong tensile strength is a topic item in the area of tissue engineering, medicine engineering, and so forth. Here we introduced an alkyl chitosan film with strong tensile strength and its possibility for an absorbable anticoagulation material in vivo was tested in the series of blood test, such as dynamic coagulation time, plasma recalcification time and hemolysis. Alkyl chitosan film was a better biomaterial than traditional chitosan film in the anticoagulation, tissue compatibility and cell compatibility. The unique trait of alkyl chitosan film may be for its greater contact angle and hydrophobicity ability to reduce the adsorption capacity for the blood component and the activity of fibrinolytic enzymes, enhance the antibacterial capacity than chitosan film. Moreover, none of chitosan film or butyl chitosan film exhibited quick inflammation or other disadvantage and degraded quickly by implanted test. Therefore, Alkyl chitosan film is of prospective properties as an implantable, absorbable agent for tissue heals, and this material need further research. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 105A: 3034-3041, 2017. © 2017 Wiley Periodicals, Inc.

  3. Interaction domains in high performance NdFeB thick films

    Energy Technology Data Exchange (ETDEWEB)

    Woodcock, Tom; Khlopkov, Kirill; Schultz, Ludwig; Gutfleisch, Oliver [IFW Dresden, IMW, Dresden (Germany); Walther, Arno [Insitut Neel, CNRS-UJF, Grenoble (France); CEA Leti - MINATEC, Grenoble (France); Dempsey, Nora; Givord, Dominique [Insitut Neel, CNRS-UJF, Grenoble (France)

    2009-07-01

    Thick sputtered films (5-300 micron) of NdFeB have excellent hard magnetic properties which make them attractive for applications in micro-electro-mechanical systems (MEMS). A two step process consisting of triode sputtering and high temperature annealing produced films with energy densities approaching those of sintered NdFeB magnets. Magnetic force microscopy (MFM) using hard magnetic tips showed that the films deposited without substrate heating and at 300 C exhibited magnetic domains typical of low anisotropy materials. These films were amorphous in the as-deposited state. The film deposited at 500 C was crystalline and displaid hard magnetic properties. This was reflected in the magnetic microstructure which showed interaction domains typical of highly textured and high magnetic anisotropy materials with a grain size below or equal to the critical single-domain particle limit. With increasing substrate temperature, the domain patterns of the annealed films became coarser, indicating higher degrees of texture.

  4. System reduction for nanoscale IC design

    CERN Document Server

    2017-01-01

    This book describes the computational challenges posed by the progression toward nanoscale electronic devices and increasingly short design cycles in the microelectronics industry, and proposes methods of model reduction which facilitate circuit and device simulation for specific tasks in the design cycle. The goal is to develop and compare methods for system reduction in the design of high dimensional nanoelectronic ICs, and to test these methods in the practice of semiconductor development. Six chapters describe the challenges for numerical simulation of nanoelectronic circuits and suggest model reduction methods for constituting equations. These include linear and nonlinear differential equations tailored to circuit equations and drift diffusion equations for semiconductor devices. The performance of these methods is illustrated with numerical experiments using real-world data. Readers will benefit from an up-to-date overview of the latest model reduction methods in computational nanoelectronics.

  5. Properties of indium tin oxide films deposited using High Target Utilisation Sputtering

    International Nuclear Information System (INIS)

    Calnan, S.; Upadhyaya, H.M.; Thwaites, M.J.; Tiwari, A.N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited on soda lime glass and polyimide substrates using an innovative process known as High Target Utilisation Sputtering (HiTUS). The influence of the oxygen flow rate, substrate temperature and sputtering pressure, on the electrical, optical and thermal stability properties of the films was investigated. High substrate temperature, medium oxygen flow rate and moderate pressure gave the best compromise of low resistivity and high transmittance. The lowest resistivity was 1.6 x 10 -4 Ω cm on glass while that on the polyimide was 1.9 x 10 -4 Ω cm. Substrate temperatures above 100 deg. C were required to obtain visible light transmittance exceeding 85% for ITO films on glass. The thermal stability of the films was mainly influenced by the oxygen flow rate and thus the initial degree of oxidation. The film resistivity was either unaffected or reduced after heating in vacuum but generally increased for oxygen deficient films when heated in air. The greatest increase in transmittance of oxygen deficient films occurred for heat treatment in air while that of the highly oxidised films was largely unaffected by heating in both media. This study has demonstrated the potential of HiTUS as a favourable deposition method for high quality ITO suitable for use in thin film solar cells

  6. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  7. Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

    Science.gov (United States)

    Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

    2014-08-29

    Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

  8. Highly anisotropic optoelectronic properties of aligned films of self-assembled platinum molecular wires

    NARCIS (Netherlands)

    Debije, M.G.; Haas, de M.P.; Savenije, T.J.; Warman, J.M.; Fontana, M.; Stutzmann, N.; Caseri, W.R.; Smith, P.

    2003-01-01

    Self-assembled columns of alternating tetrachloro- and tetraalkylaminoplatinum moieties form stable, highly oriented, optically anisotropic films on a friction-deposited polytetrafluoroethylene surface (see Figure). Charge transport in the films is rapid (mobility =¿ca. 10–2 cm2¿V–1¿s–1) and highly

  9. High quality TmIG films with perpendicular magnetic anisotropy grown by sputtering

    Science.gov (United States)

    Wu, C. N.; Tseng, C. C.; Yeh, S. L.; Lin, K. Y.; Cheng, C. K.; Fanchiang, Y. T.; Hong, M.; Kwo, J.

    Ferrimagnetic thulium iron garnet (TmIG) films grown on gadolinium gallium garnet substrates recently showed stress-induced perpendicular magnetic anisotropy (PMA), attractive for realization of quantum anomalous Hall effect (QAHE) of topological insulator (TI) films via the proximity effect. Moreover, current induced magnetization switching of Pt/TmIG has been demonstrated for the development of room temperature (RT) spintronic devices. In this work, high quality TmIG films (about 25nm) were grown by sputtering at RT followed by post-annealing. We showed that the film composition is tunable by varying the growth parameters. The XRD results showed excellent crystallinity of stoichiometric TmIG films with an out-of-plane lattice constant of 1.2322nm, a narrow film rocking curve of 0.017 degree, and a film roughness of 0.2 nm. The stoichiometric films exhibited PMA and the saturation magnetization at RT was 109 emu/cm3 (RT bulk value 110 emu/cm3) with a coercive field of 2.7 Oe. In contrast, TmIG films of Fe deficiency showed in-plane magnetic anisotropy. The high quality sputtered TmIG films will be applied to heterostructures with TIs or metals with strong spin-orbit coupling for novel spintronics.

  10. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  11. Highly transparent films from carboxymethylated microfibrillated cellulose: The effect of multiple homogenization steps on key properties

    DEFF Research Database (Denmark)

    Siró, Istvan; Plackett, David; Hedenqvist, M.

    2011-01-01

    We produced microfibrillated cellulose by passing carboxymethylated sulfite-softwood-dissolving pulp with a relatively low hemicellulose content (4.5%) through a high-shear homogenizer. The resulting gel was subjected to as many as three additional homogenization steps and then used to prepare...... solvent-cast films. The optical, mechanical, and oxygen-barrier properties of these films were determined. A reduction in the quantity and appearance of large fiber fragments and fiber aggregates in the films as a function of increasing homogenization was illustrated with optical microscopy, atomic force...... microscopy, and scanning electron microscopy. Film opacity decreased with increasing homogenization, and the use of three additional homogenization steps after initial gel production resulted in highly transparent films. The oxygen permeability of the films was not significantly influenced by the degree...

  12. Amorphous Silicon-Germanium Films with Embedded Nano crystals for Thermal Detectors with Very High Sensitivity

    International Nuclear Information System (INIS)

    Calleja, C.; Torres, A.; Rosales-Quintero, P.; Moreno, M.

    2016-01-01

    We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nano crystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (micro bolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9%K -1 ). Our results show that amorphous silicon-germanium films with embedded nano crystals can be used as thermo sensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

  13. Crystalline and amorphous phases in carbon nitride films produced by intense high-pressure plasma

    International Nuclear Information System (INIS)

    Gurarie, V.N.; Orlov, A.V.; Bursill, L.A.; JuLin, P.; Nugent, K.W.; Chon, J.W.; Prawer, S.

    1997-01-01

    Carbon-nitride films are prepared using a high-intensity pulsed plasma deposition technique. A wide range of nitrogen pressure and discharge intensity are used to investigate their effect on the morphology, nitrogen content, structure, bonding, phase composition and mechanical characteristics of the CN films deposited. Increasing the nitrogen pressure from 0.1 atm to 10 atm results in an increase of nitrogen incorporation into CN films to maximum of 45 at %. Under the high-energy density deposition conditions which involve ablation of the quartz substrate the CN films are found to incorporate in excess of 60 at %N. Raman spectra of these films contain sharp peaks characteristic of a distinct crystalline CN phase. TEM diffraction patterns for the films deposited below 1 atm unambiguously show the presence of micron-sized crystals displaying a cubic symmetry. (authors)

  14. Seed layer technique for high quality epitaxial manganite films

    Directory of Open Access Journals (Sweden)

    P. Graziosi

    2016-08-01

    Full Text Available We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  15. Bioinspired, Ultrastrong, Highly Biocompatible, and Bioactive Natural Polymer/Graphene Oxide Nanocomposite Films.

    Science.gov (United States)

    Zhu, Wen-Kun; Cong, Huai-Ping; Yao, Hong-Bin; Mao, Li-Bo; Asiri, Abdullah M; Alamry, Khalid A; Marwani, Hadi M; Yu, Shu-Hong

    2015-09-09

    Tough and biocompatible nanocomposite films: A new type of bioinspired ultrastrong, highly biocompatible, and bioactive konjac glucomannan (KGM)/graphene oxide (GO) nanocomposite film is fabricated on a large scale by a simple solution-casting method. Such KGM-GO composite films exhibit much enhanced mechanical properties under the strong hydrogen-bonding interactions, showing great potential in the fields of tissue engineering and food package. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

    Science.gov (United States)

    Torgovkin, A.; Chaudhuri, S.; Ruhtinas, A.; Lahtinen, M.; Sajavaara, T.; Maasilta, I. J.

    2018-05-01

    Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 °C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to ∼17 μΩ cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5–10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.

  17. Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.

    Science.gov (United States)

    Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae

    2014-04-23

    A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Transparent high-performance CDSE thin-film solar cells

    International Nuclear Information System (INIS)

    Mahawela, P.; Jeedigunta, S.; Vakkalanka, S.; Ferekides, C.S.; Morel, D.L.

    2005-01-01

    Simulations indicate that 25-30% efficiency can be achieved with a four-terminal thin-film tandem structure. The bottom low band gap cell can be CuIn 1-x Ga x Se 2 , and CdSe is proposed as the top cell, as it has an ideal band gap of 1.7 eV. In addition to the efficiency requirements, the top cell must also be transparent to effectively transmit sub band gap light to the bottom cell. We have developed CdSe devices that meet many of the requirements of this tandem structure. High electronic quality CdSe has been deposited on SnO 2 and ZnO, which serve as the transparent n-type contact. The p-type transparent contact is ZnSe/Cu. Voc's of 475 mV have been achieved and can be further improved with better contacts. However, record Jsc's in excess of 17 mA/cm 2 have been achieved. This is close to the target 18 mA/cm 2 to meet the efficiency objectives. Transmission of 80% of the sub band gap radiation has been demonstrated for 2-no. muno. m-thick absorber layers. This is also close to the 85% target to achieve the overall tandem efficiency objectives. Improvement of the contact layers to achieve the Voc target is the final challenge

  19. Vacuum deposition of high quality metal films on porous substrates

    International Nuclear Information System (INIS)

    Barthell, B.L.; Duchane, D.V.

    1982-01-01

    A composite mandrel has been developed consisting of a core of low density polymethylpentene foam overcoated with a thin layer of film-forming polymer. The surface tension and viscosity of the coating solution are important parameters in obtaining a polymer film which forms a continuous, smooth skin over the core without penetrating into the foam matrix. Water soluble film formers with surface tensions in the range of 45 dyn/cm and minimum viscosities of a few hundred centipoises have been found most satisfactory for coating polymethylpentene foam. By means of this technique, continuous polymer fims with thicknesses of 10--20 μm have been formed on the surface of machined polymethylpentene foam blanks. Aluminum has been vacuum deposited onto these composite mandrels to produce metal films which appear smooth and generally defect free even at 10 000 times magnification

  20. Microwave impedance of epitaxial high-temperature superconductor films

    International Nuclear Information System (INIS)

    Melkov, G.A.; Malyshev, V.Yu.; Bagada, A.V.

    1995-01-01

    In the 3 cm band dependences of the epitaxial HTS film surface resistance on the magnitude of ac and dc magnetic fields have been measured. YBa 2 Cu 3 O 7-σ films on sapphire were investigated. It was established that alternating magnetic field produces a stronger impact on the surface resistance than dc field. To explain experimental results the assumption is made that a HTS film is not an ideal superconductor and consists of series-connected sections of various types: sections of an ideal superconductor, sections of low and large resistance intragranular Josephson junctions, shunted by the ideal superconductor, and finally, sections of intergranular Josephson junctions few for epitaxial films. In these conditions the dependences of the surface resistance on dc magnetic field are caused by Abrikosov's vortices moving in ideal superconductive sections, and dependences on the amplitude of ac magnetic field are caused by switching of large resistance junctions to a low resistance state

  1. A heating and diffusion barrier based on TaSiN x for miniaturized IC devices

    International Nuclear Information System (INIS)

    Cheng, H.-Y.; Chen, Y.-C.; Lee, C.-M.; Wang, S.-H.; Chin, T.-S.

    2006-01-01

    Highly resistive TaSiN x films investigated as candidates for heating and diffusion-barrier layers for miniaturized IC devices such as a sensor or a phases-change random access memory (PCRAM). The obtained resistivity, between 0.069-1.21 Ω cm, increases with increasing nitrogen content up to 52.83%, and fulfills the requirements as a suitable heating layer. All the as-deposited films were amorphous, and the films with substantial nitrogen content showed excellent thermal stability The amorphous structure had a very smooth surface which was stable at temperatures up to 800 deg. C. In addition to its heating capability, the amorphous structure with no grain boundaries was found to also act as a good diffusion barrier effect in contact with a tungsten electrode as determined by AES an TEM analysis. The barrier effect was evaluated by an annealing at 500 and 600 deg. C in Ar atmosphere for 30 min, respectively. The highly resistive TaSiN x heating layer successfully obstructed the diffusion of tungsten atoms from the W electrodes even when the layer was only 10 nm thick. With increasing N content, the heating and diffusion-barrier layer for PCRAM was proposed as a typical example of many potential applications

  2. Structure, electrical characteristics, and high-temperature stability of aerosol jet printed silver nanoparticle films

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, Md Taibur; McCloy, John; Panat, Rahul, E-mail: rahul.panat@wsu.edu, E-mail: rvchintalapalle@utep.edu [School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99163 (United States); Ramana, C. V., E-mail: rahul.panat@wsu.edu, E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

    2016-08-21

    Printed electronics has emerged as a versatile eco-friendly fabrication technique to create sintered nanoparticle (NP) films on arbitrary surfaces with an excellent control over the film microstructure. While applicability of such films for high-temperature applications is not explored previously, herein we report the high-temperature electrical stability of silver (Ag) metal NP films fabricated using an Aerosol Jet based printing technique and demonstrate that this behavior is dictated by changes in the film microstructure. In-situ high temperature (24–500 °C) impedance spectroscopy measurements show that the real part of the impedance increases with increasing temperature up to 150 °C, at which point a decreasing trend prevails until 300 °C, followed again by an increase in impedance. The electrical behavior is correlated with the in-situ grain growth of the Ag NP films, as observed afterwards by scanning electron microscopy and X-ray diffraction (XRD), and could be tailored by controlling the initial microstructure through sintering conditions. Using combined diffraction and spectroscopic analytical methods, it is demonstrated the Aerosol Jet printed Ag NP films exhibit enhanced thermal stability and oxidation resistance. In addition to establishing the conditions for stability of Ag NP films, the results provide a fundamental understanding of the effect of grain growth and reduction in grain boundary area on the electrical stability of sintered NP films.

  3. Microstructure of ZnO thin films deposited by high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Reed, A.N., E-mail: amber.reed.5@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Shamberger, P.J. [Department of Materials Science and Engineering, Texas A& M University, College Station, TX 77843 (United States); Hu, J.J. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Muratore, C. [Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Bultman, J.E. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Voevodin, A.A., E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States)

    2015-03-31

    High power impulse magnetron sputtering was used to deposit thin (~ 100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates heated to 150 °C. The resulting films had strong crystallinity, highly aligned (002) texture and low surface roughness (root mean square roughness less than 10 nm), as determined by X-ray diffraction, transmission electron microscopy, scanning electron microscopy and atomic force spectroscopy measurements. Deposition pressure and target–substrate distance had the greatest effect on film microstructure. The degree of alignment in the films was strongly dependent on the gas pressure. Deposition at pressures less than 0.93 Pa resulted in a bimodal distribution of grain sizes. An initial growth layer with preferred orientations (101) and (002) parallel to the interface was observed at the film–substrate interface under all conditions examined here; the extent of that competitive region was dependent on growth conditions. Time-resolved current measurements of the target and ion energy distributions, determined using energy resolved mass spectrometry, were correlated to film microstructure in order to investigate the effect of plasma conditions on film nucleation and growth. - Highlights: • Low temperature growth of nanocrystalline zinc oxide (ZnO) films. • ZnO films had a highly (002) textured, smooth, dense microstructure. • Dominant (002) orientation of films was pressure dependent. • Interfacial (101)/(002) mixed orientation layer controlled by substrate location.

  4. Structure, electrical characteristics, and high-temperature stability of aerosol jet printed silver nanoparticle films

    International Nuclear Information System (INIS)

    Rahman, Md Taibur; McCloy, John; Panat, Rahul; Ramana, C. V.

    2016-01-01

    Printed electronics has emerged as a versatile eco-friendly fabrication technique to create sintered nanoparticle (NP) films on arbitrary surfaces with an excellent control over the film microstructure. While applicability of such films for high-temperature applications is not explored previously, herein we report the high-temperature electrical stability of silver (Ag) metal NP films fabricated using an Aerosol Jet based printing technique and demonstrate that this behavior is dictated by changes in the film microstructure. In-situ high temperature (24–500 °C) impedance spectroscopy measurements show that the real part of the impedance increases with increasing temperature up to 150 °C, at which point a decreasing trend prevails until 300 °C, followed again by an increase in impedance. The electrical behavior is correlated with the in-situ grain growth of the Ag NP films, as observed afterwards by scanning electron microscopy and X-ray diffraction (XRD), and could be tailored by controlling the initial microstructure through sintering conditions. Using combined diffraction and spectroscopic analytical methods, it is demonstrated the Aerosol Jet printed Ag NP films exhibit enhanced thermal stability and oxidation resistance. In addition to establishing the conditions for stability of Ag NP films, the results provide a fundamental understanding of the effect of grain growth and reduction in grain boundary area on the electrical stability of sintered NP films.

  5. Structure, electrical characteristics, and high-temperature stability of aerosol jet printed silver nanoparticle films

    Science.gov (United States)

    Rahman, Md Taibur; McCloy, John; Ramana, C. V.; Panat, Rahul

    2016-08-01

    Printed electronics has emerged as a versatile eco-friendly fabrication technique to create sintered nanoparticle (NP) films on arbitrary surfaces with an excellent control over the film microstructure. While applicability of such films for high-temperature applications is not explored previously, herein we report the high-temperature electrical stability of silver (Ag) metal NP films fabricated using an Aerosol Jet based printing technique and demonstrate that this behavior is dictated by changes in the film microstructure. In-situ high temperature (24-500 °C) impedance spectroscopy measurements show that the real part of the impedance increases with increasing temperature up to 150 °C, at which point a decreasing trend prevails until 300 °C, followed again by an increase in impedance. The electrical behavior is correlated with the in-situ grain growth of the Ag NP films, as observed afterwards by scanning electron microscopy and X-ray diffraction (XRD), and could be tailored by controlling the initial microstructure through sintering conditions. Using combined diffraction and spectroscopic analytical methods, it is demonstrated the Aerosol Jet printed Ag NP films exhibit enhanced thermal stability and oxidation resistance. In addition to establishing the conditions for stability of Ag NP films, the results provide a fundamental understanding of the effect of grain growth and reduction in grain boundary area on the electrical stability of sintered NP films.

  6. Silver Nanowire Transparent Conductive Films with High Uniformity Fabricated via a Dynamic Heating Method.

    Science.gov (United States)

    Jia, Yonggao; Chen, Chao; Jia, Dan; Li, Shuxin; Ji, Shulin; Ye, Changhui

    2016-04-20

    The uniformity of the sheet resistance of transparent conductive films is one of the most important quality factors for touch panel applications. However, the uniformity of silver nanowire transparent conductive films is far inferior to that of indium-doped tin oxide (ITO). Herein, we report a dynamic heating method using infrared light to achieve silver nanowire transparent conductive films with high uniformity. This method can overcome the coffee ring effect during the drying process and suppress the aggregation of silver nanowires in the film. A nonuniformity factor of the sheet resistance of the as-prepared silver nanowire transparent conductive films could be as low as 6.7% at an average sheet resistance of 35 Ω/sq and a light transmittance of 95% (at 550 nm), comparable to that of high-quality ITO film in the market. In addition, a mechanical study shows that the sheet resistance of the films has little change after 5000 bending cycles, and the film could be used in touch panels for human-machine interactive input. The highly uniform and mechanically stable silver nanowire transparent conductive films meet the requirement for many significant applications and could play a key role in the display market in a near future.

  7. High-frequency parameters of magnetic films showing magnetization dispersion

    International Nuclear Information System (INIS)

    Sidorenkov, V.V.; Zimin, A.B.; Kornev, Yu.V.

    1988-01-01

    Magnetization dispersion leads to skewed resonance curves shifted towards higher magnetizing fields, together with considerable reduction in the resonant absorption, while the FMR line width is considerably increased. These effects increase considerably with frequency, in contrast to films showing magnetic-anisotropy dispersion, where they decrease. It is concluded that there may be anomalies in the frequency dependence of the resonance parameters for polycrystalline magnetic films

  8. Numerical Analysis of Film Cooling at High Blowing Ratio

    Science.gov (United States)

    El-Gabry, Lamyaa; Heidmann, James; Ameri, Ali

    2009-01-01

    Computational Fluid Dynamics is used in the analysis of a film cooling jet in crossflow. Predictions of film effectiveness are compared with experimental results for a circular jet at blowing ratios ranging from 0.5 to 2.0. Film effectiveness is a surface quantity which alone is insufficient in understanding the source and finding a remedy for shortcomings of the numerical model. Therefore, in addition, comparisons are made to flow field measurements of temperature along the jet centerline. These comparisons show that the CFD model is accurately predicting the extent and trajectory of the film cooling jet; however, there is a lack of agreement in the near-wall region downstream of the film hole. The effects of main stream turbulence conditions, boundary layer thickness, turbulence modeling, and numerical artificial dissipation are evaluated and found to have an insufficient impact in the wake region of separated films (i.e. cannot account for the discrepancy between measured and predicted centerline fluid temperatures). Analyses of low and moderate blowing ratio cases are carried out and results are in good agreement with data.

  9. Silicone Adhesives for High Temperature Inflatable Fabrics and Polymer Films, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Thin films, elastomeric materials, high temperature fabrics and adhesives that are capable of withstanding thermal extremes (-130oC to 500oC) are highly desirable...

  10. Highly Hydrophilic Thin-Film Composite Forward Osmosis Membranes Functionalized with Surface-Tailored Nanoparticles

    KAUST Repository

    Tiraferri, Alberto; Kang, Yan; Giannelis, Emmanuel P.; Elimelech, Menachem

    2012-01-01

    Thin-film composite polyamide membranes are state-of-the-art materials for membrane-based water purification and desalination processes, which require both high rejection of contaminants and high water permeabilities. However, these membranes

  11. Growth of high quality large area MgB2 thin films by reactive evaporation

    OpenAIRE

    Moeckly, Brian H.; Ruby, Ward S.

    2006-01-01

    We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials u...

  12. Damage thresholds of thin film materials and high reflectors at 248 nm

    International Nuclear Information System (INIS)

    Rainer, F.; Lowdermilk, W.H.; Milam, D.; Carniglia, C.K.; Hart, T.T.; Lichtenstein, T.L.

    1982-01-01

    Twenty-ns, 248-nm KrF laser pulses were used to measure laser damage thresholds for halfwave-thick layers of 15 oxide and fluoride coating materials, and for high reflectance coatings made with 13 combinations of these materials. The damage thresholds of the reflectors and single-layer films were compared to measurements of several properties of the halfwave-thick films to determine whether measurements of these properties of single-layer films to determine whether measurements of these properties of single-layer films were useful for identifying materials for fabrication of damage resistant coatings

  13. High-reflective colorful films fabricated by all-solid multi-layer cholesteric structures

    Science.gov (United States)

    Li, Y.; Luo, D.

    2018-02-01

    We demonstrate all-solid-state film with high-reflectivity based on cholesteric template. The adhesive (NOA81) is both filler and an adhesive, which can be avoids interfacial losses. The reflected right- and left-circularly polarized light has been developed by roll-to-roll method, and the reflectance of the films is more than 78%. Here, the all-solid film was used in distribute feedback laser with dye-doped. In addition, this films also used in include flexible reflective display, color pixels in digital photographs, printing and colored cladding of variety of objects.

  14. Characteristics of (Ti,Ta)N thin films prepared by using pulsed high energy density plasma

    Energy Technology Data Exchange (ETDEWEB)

    Feng Wenran [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Chen Guangliang [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Li Li [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Lv Guohua [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Zhang Xianhui [College of Science, Changchun University of Science and Technology, Changchun 130022, Jilin Province (China); Niu Erwu [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Liu Chizi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Yang Size [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

    2007-07-21

    (Ti,Ta)N films were prepared by pulsed high energy density plasma (PHEDP) from a coaxial gun in N{sub 2} gas. The coaxial gun is composed of a tantalum inner electrode and a titanium outer one. Material characteristics of the (Ti,Ta)N film were investigated by x-ray photoelectron spectroscopy and x-ray diffraction. The microstructure of the film was observed by a scanning electron microscope. The elemental composition and the interface of the film/substrate were analysed using Auger electron spectrometry. Our results suggest that the binary metal nitride film (Ti,Ta)N, can be prepared by PHEDP. It also shows that dense nanocrystalline (Ti,Ta)N film can be achieved.

  15. Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

    Directory of Open Access Journals (Sweden)

    Pei-Chung Lin

    2016-08-01

    Full Text Available Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 °C are saturation magnetization 9.13 × 105 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 103 A/m, and electrical resistivity 3.75 μΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

  16. SURFACE FILMS TO SUPPRESS FIELD EMISSION IN HIGH-POWER MICROWAVE COMPONENTS

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay l

    2014-02-07

    Results are reported on attempts to reduce the RF breakdown probability on copper accelerator structures by applying thin surface films that could suppress field emission of electrons. Techniques for application and testing of copper samples with films of metals with work functions higher than copper are described, principally for application of platinum films, since platinum has the second highest work function of any metal. Techniques for application of insulating films are also described, since these can suppress field emission and damage on account of dielectric shielding of fields at the copper surface, and on account of the greater hardness of insulating films, as compared with copper. In particular, application of zirconium oxide films on high-field portions of a 11.424 GHz SLAC cavity structure for breakdown tests are described.

  17. Wear life of sputtered MoSx films extended by high energy ion implantation

    International Nuclear Information System (INIS)

    Okazaki, Yasufumi; Fujiura, Hideo; Nishimura, Makoto

    2000-01-01

    The tribological characteristics of sputtered MoSx films have been reportedly improved by inert gas ion implantation. We tried to extend their wear life by introducing indium, carbon and gallium ion implantation. Pin-on-disk testers were used to measure friction coefficient and wear life in a vacuum, dry and humid air. Comparing with the unimplanted films, we found that the indium ion implanted films showed marked improvement in wear life in a vacuum. Carbon ion implanted films showed improvement in wear life in high humid air. Implantation was effective when it was conducted with maximum concentration at the interface between film and substrate rather than at the neighborhood of the interface inside a film. (author)

  18. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  19. Structural-optical study of high-dielectric-constant oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, M.M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Luchena, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Toro, R.G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Malandrino, G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Fragala, I.L. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Nigro, R. Lo [Istituto di Microelettronica e Microsistemi, IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy)

    2006-10-31

    High-k polycrystalline Pr{sub 2}O{sub 3} and amorphous LaAlO{sub 3} oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr{sub 2}O{sub 3} films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO{sub 3} films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.

  20. Use of advanced commercial ICs (COTS) for space application

    International Nuclear Information System (INIS)

    Strobel, D.J.; Czajkowski, D.R.; Layton, P.; Shanken, S.

    1999-01-01

    A product line of space-qualified radiation-tolerant ICs based on a high-volume commercial-off-the-shelf (COTS) silicon has been developed. The basic results from over 300 lots of COTS silicon, assembled and screened to Class B and Class S requirements will be presented. Intelligent use of commercial ICs engineered to improve radiation performance, is effective in introducing advanced technology to new satellite systems. Space Electronics has introduced over 125 space-qualified microelectronics standard products, that are used on over 90 space projects. (authors)

  1. A highly selective and wide range ammonia sensor—Nanostructured ZnO:Co thin film

    International Nuclear Information System (INIS)

    Mani, Ganesh Kumar; Rayappan, John Bosco Balaguru

    2015-01-01

    Graphical abstract: - Highlights: • Cobalt doped nanostructured ZnO thin films were spray deposited on glass substrates. • Co-doped ZnO film was highly selective towards ammonia than ethanol, methanol, etc. • The range of ammonia detection was improved significantly by doping cobalt in ZnO. - Abstract: Ammonia sensing characteristics of undoped and cobalt (Co)-doped nanostructured ZnO thin films were investigated. Polycrystalline nature with hexagonal wurtzite structure and high crystalline quality with dominant (0 0 2) plane orientation of Co-doped ZnO film were confirmed by the X-ray diffractogram. Scanning electron micrographs of the undoped film demonstrated the uniform deposition of sphere-shaped grains. But, smaller particles with no clear grain boundaries were observed for Co-doped ZnO thin film. Band gap values were found to be 3.26 eV and 3.22 eV for undoped and Co-doped ZnO thin films. Ammonia sensing characteristics of Co-doped ZnO film at room temperature were investigated in the concentration range of 15–1000 ppm. Variation in the sensing performances of Co-doped and pure ZnO thin films has been analyzed and compared

  2. Electronic Instability at High Flux-Flow Velocities in High-Tc Superconducting Films

    DEFF Research Database (Denmark)

    Doettinger, S. G.; Huebener, R. P.; Gerdemann, R.

    1994-01-01

    At high flux-flow velocities in type-II superconductors the nonequilibrium distribution of the quasiparticles leads to an electronic instability and an aburpt switching into a state with higher electric resistivity, as predicted by Larkin and Ovchinnikow (LO). We report the first obervation...... of this effect in a high-temperature superconductor, namely in epitaxial c-axis oriented films of YBa(2)Cu3O(7)-(delta). Using the LO therory, we have extracted from out results the inelastic quasiparticle scattering rare tau(in)(-1), which strongly decreases with decreasing temperature below T-c...

  3. Electronic States of IC60BA and PC71BM

    International Nuclear Information System (INIS)

    Sheng Chun-Qi; Wang Peng; Shen Ying; Li Wen-Jie; Li Hong-Nian; Zhang Wen-Hua; Zhu Jun-Fa; Lai Guo-Qiao

    2013-01-01

    We investigate the electronic states of IC 60 BA and PC 71 BM using first-principles calculations and photoelectron spectroscopy (PES) measurements. The energy level structures for all possible isomers are reported and compared with those of C 60 , C 70 and PC 61 BM. The attachment of the side chains can raise the LUMO energies and decrease the HOMO-LUMO gaps, and thus helps to increase the power-conversion efficiency of bulk heterojunction solar cells. In the PES studies, we prepared IC 60 BA and PC 71 BM films on Si:H(111) substrates to construct adsorbate/substrate interfaces describable with the integer charge-transfer (ICT) model. Successful measurements then revealed that one of the most important material properties for an electron acceptor, the energy of the negative integer charge-transfer state (E ICT− ), is 4.31 eV below the vacuum level for PC 71 BM. The E ICT− of IC 60 BA is smaller than 4.14 eV

  4. High quality atomically thin PtSe2 films grown by molecular beam epitaxy

    Science.gov (United States)

    Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

    2017-12-01

    Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

  5. High-frequency permeability in double-layered structure of amorphous Co-Ta-Zr films

    International Nuclear Information System (INIS)

    Ochiai, Y.; Hayakawa, M.; Hayashi, K.; Aso, K.

    1988-01-01

    The high-frequency permeability of amorphous Co-Ta-Zr films was studied and the frequency dependence was described in terms of the eddy-current-loss formula. For the double-layered structure intervened with SiO 2 film, the degradation of the permeability became apparent with the decrease of SiO 2 thickness

  6. Transport and stability studies on high band gap a-Si:H films ...

    Indian Academy of Sciences (India)

    which are responsible for light-induced degradation by strong Si–Si bonds. This results in ... The films reported have very high deposition rate (4–5 Å/s) compared to that reported .... Room temperature dark conductivity of the SC films ranges from ~10−10 to ... dilution increases σd considerably with smaller activation energy.

  7. High efficiency thin-film solar cells for space applications: challenges and opportunities

    NARCIS (Netherlands)

    Leest, R.H. van

    2017-01-01

    In theory high efficiency thin-film III-V solar cells obtained by the epitaxial lift-off (ELO) technique offer excellent characteristics for application in space solar panels. The thesis describes several studies that investigate the space compatibility of the thin-film solar cell design developed

  8. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

    NARCIS (Netherlands)

    Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2013-01-01

    A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

  9. High-quality CdTe films from nanoparticle precursors

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  10. Fabrication of highly crystalline oxide thin films on plastics: Sol–gel transfer technique involving high temperature process

    Directory of Open Access Journals (Sweden)

    Hiromitsu Kozuka

    2016-09-01

    Full Text Available Si(100 substrates were coated with a polyimide (PI–polyvinylpyrrolidone (PVP mixture film, and an alkoxide-derived TiO2 gel film was deposited on it by spin-coating. The gel films were fired under various conditions with final annealing at 600–1000 °C. The PI–PVP layer was completely decomposed at such high temperatures while the TiO2 films survived on Si(100 substrates without any damages. When the final annealing temperature was raised, the crystalline phase changed from anatase to rutile, and the crystallite size and the refractive index of the films tended to increase. The TiO2 films thus fired on Si(100 substrates were transferred to polycarbonate (PC substrates by melting the surface of the plastic substrate either in a near-infrared image furnace or on a hot plate under a load. Cycles of deposition and firing were found to be effective in achieving successful transfer even for the films finally annealed at 1000 °C. X-ray photoelectron spectroscopic analyses on the film/Si(100 interface suggested that the residual carbon or carbides at the interface could be a possible factor, but not a necessary and decisive factor that allows the film transfer.

  11. High-frequency applications of high-temperature superconductor thin films

    Science.gov (United States)

    Klein, N.

    2002-10-01

    High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz.

  12. High-frequency applications of high-temperature superconductor thin films

    International Nuclear Information System (INIS)

    Klein, N.

    2002-01-01

    High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz. (author)

  13. Analog IC Design at the University of Twente

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    This article describes some recent research results from the IC Design group of the University of Twente, located in Enschede, The Netherlands. Our research focuses on analog CMOS circuit design with emphasis on high frequency and broadband circuits. With the trend of system integration in mind, we

  14. Graphene as tunable contact for high performance thin film transistor

    Science.gov (United States)

    Liu, Yuan

    Graphene has been one of the most extensively studied materials due to its unique band structure, the linear dispersion at the K point. It gives rise to novel phenomena, such as the anomalous quantum Hall effect, and has opened up a new category of "Fermi-Dirac" physics. Graphene has also attracted enormous attention for future electronics because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. However, graphene has zero intrinsic band gap, thus can not be used as the active channel material for logic transistors with sufficient on/off current ratio. Previous approaches to address this challenge include the induction of a transport gap in graphene nanostructures or bilayer graphene. However, these approaches have proved successful in improving the on-- off ratio of the resulting devices, but often at a severe sacrifice of the deliverable current density. Alternatively, with a finite density of states, tunable work-function and optical transparency, graphene can function as a unique tunable contact material to create a new structure of electronic devices. In this thesis, I will present my effort toward on-off ratio of graphene based vertical thin film transistor. I will include the work form four of my first author publication. I will first present my research studies on the a dramatic enhancement of the overall quantum efficiency and spectral selectivity of graphene photodetector, by coupling with plasmonic nanostructures. It is observed that metallic plasmonic nanostructures can be integrated with graphene photodetectors to greatly enhance the photocurrent and external quantum efficiency by up to 1,500%. Plasmonic nanostructures of variable resonance frequencies selectively amplify the photoresponse of graphene to light of different wavelengths, enabling highly specific detection of multicolours. Then I will show a new design of highly flexible vertical TFTs (VTFTs) with superior electrical

  15. Study on the effect of subcooling on vapor film collapse on high temperature particle surface

    International Nuclear Information System (INIS)

    Abe, Yutaka; Tochio, Daisuke; Yanagida, Hiroshi

    2000-01-01

    Thermal detonation model is proposed to describe vapor explosion. According to this model, vapor film on pre-mixed high temperature droplet surface is needed to be collapsed for the trigger of the vapor explosion. It is pointed out that the vapor film collapse behavior is significantly affected by the subcooling of low temperature liquid. However, the effect of subcooling on micro-mechanism of vapor film collapse behavior is not experimentally well identified. The objective of the present research is to experimentally investigate the effect of subcooling on micro-mechanism of film boiling collapse behavior. As the results, it is experimentally clarified that the vapor film collapse behavior in low subcooling condition is qualitatively different from the vapor film collapse behavior in high subcooling condition. In case of vapor film collapse by pressure pulse, homogeneous vapor generation occurred all over the surface of steel particle in low subcooling condition. On the other hand, heterogeneous vapor generation was observed for higher subcooling condition. In case of vapor film collapse spontaneously, fluctuation of the gas-liquid interface after quenching propagated from bottom to top of the steel particle heterogeneously in low subcooling condition. On the other hand, simultaneous vapor generation occurred for higher subcooling condition. And the time transient of pressure, particle surface temperature, water temperature and visual information were simultaneously measured in the vapor film collapse experiment by external pressure pulse. Film thickness was estimated by visual data processing technique with the pictures taken by the high-speed video camera. Temperature and heat flux at the vapor-liquid interface were estimated by solving the heat condition equation with the measured pressure, liquid temperature and vapor film thickness as boundary conditions. Movement of the vapor-liquid interface were estimated with the PIV technique with the visual observation

  16. High current densities in superconducting films from magnetization

    International Nuclear Information System (INIS)

    McGuire, T.R.; Gupta, A.; Koren, G.; Gross, R.

    1990-01-01

    Epitaxial thin films of YBa 2 Cu 3 O 7-x made by laser ablation have the CuO planes parallel to the film surface. In the CuO planes critical currents of J C ∼40 x 10 6 amps/cm 2 are found at 5K in zero field. Multi-layered films with Gd replacing Y each .01μm in thickness have J C nearly 140 x 10 6 amps/cm 2 . This higher value is perhaps due to additional point defects. Perpendicular to the CuO planes magnetization studies indicate strong pinning effects attributed to the CuO planes acting as barriers to flux motion

  17. Pulsed laser deposition of high Tc superconducting thin films

    International Nuclear Information System (INIS)

    Singh, R.K.; Narayan, J.

    1990-01-01

    This paper reports on the pulsed laser evaporation (PLE) technique for deposition of thin films characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa 2 Cu 3 O 7 superconducting thin films on different substrates in the temperature range of 500--650 degrees C. At temperatures below 600 degrees C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3--3.5% for films deposited on (100) SrTiO 3 and (100) LaAlO 3 substrates

  18. Amorphous Cu-Ag films with high stability

    International Nuclear Information System (INIS)

    Reda, I.M.; Hafner, J.; Pongratz, P.; Wagendristel, A.; Bangert, H.; Bhat, P.K.

    1982-06-01

    Films produced by quenching Cu-Ag vapour onto cooled substrates at liquid nitrogen temperature have been investigated using electron microscopy, electron diffraction and electrical resistivity measurements. In the composition range from 30 to 70 at% Cu the as quenched films are amorphous, and within the range of 35 to 63 at% Cu the amorphous phase is stable above room temperature with a maximum crystallization temperature Tsub(c)=381 K at 47.5 at% Cu. Crystallization results in the formation of a supersaturated fcc solid solution which decomposes in a second crystallization step. The effect of deposition rate, film thickness, temperature and surface of the substrate, and most importantly of the composition on the transition temperatures has been investigated. A comparative study of the formation of amorphous phases in a wide variety of Cu-based alloys is presented. (author)

  19. High proton conductivity in the molecular interlayer of a polymer nanosheet multilayer film.

    Science.gov (United States)

    Sato, Takuma; Hayasaka, Yuta; Mitsuishi, Masaya; Miyashita, Tokuji; Nagano, Shusaku; Matsui, Jun

    2015-05-12

    High proton conductivity was achieved in a polymer multilayer film with a well-defined two-dimensional lamella structure. The multilayer film was prepared by deposition of poly(N-dodecylacryamide-co-acrylic acid) (p(DDA/AA)) monolayers onto a solid substrate using the Langmuir-Blodgett technique. Grazing-angle incidence X-ray diffraction measurement of a 30-layer film of p(DDA/AA) showed strong diffraction peaks in the out-of-plane direction at 2θ = 2.26° and 4.50°, revealing that the multilayer film had a highly uniform layered structure with a monolayer thickness of 2.0 nm. The proton conductivity of the p(DDA/AA) multilayer film parallel to the layer plane direction was 0.051 S/cm at 60 °C and 98% relative humidity with a low activation energy of 0.35 eV, which is comparable to perfluorosulfonic acid membranes. The high conductivity and low activation energy resulted from the formation of uniform two-dimensional proton-conductive nanochannels in the hydrophilic regions of the multilayer film. The proton conductivity of the multilayer film perpendicular to the layer plane was determined to be 2.1 × 10(-13) S/cm. Therefore, the multilayer film showed large anisotropic conductivity with an anisotropic ratio of 2.4 × 10(11).

  20. High performance, freestanding and superthin carbon nanotube/epoxy nanocomposite films.

    Science.gov (United States)

    Li, Jinzhu; Gao, Yun; Ma, Wenjun; Liu, Luqi; Zhang, Zhong; Niu, Zhiqiang; Ren, Yan; Zhang, Xiaoxian; Zeng, Qingshen; Dong, Haibo; Zhao, Duan; Cai, Le; Zhou, Weiya; Xie, Sishen

    2011-09-01

    We develop a facile, effective and filter free infiltration method to fabricate high performance, freestanding and superthin epoxy nanocomposite films with directly synthesized Sing-Walled Carbon Nanotubes (SWNTs) film as reinforcement skeleton. It is found that the thicknesses of the nanocomposite films can be easily controlled in the range of 0.5-3 μm by dripping target amount of acetone diluted epoxy through the skeleton film. The consequent measurements reveal that the mechanical and electrical properties of SWNTs/epoxy nanocomposite films could be tailored in a quite wide range. For examples, the Young's modulus of nanocomposite films can be tuned from 10 to 30 GPa, and the electrical conductivity can be ranged from 1000 S·cm(-1) to be insulated. Moreover, high load transfer efficiency in the nanocomposite films is demonstrated by the measured ultrahigh Raman bands shift rate (-30 ± 5 cm(-1)/% strain) under strain. The high effective modulus is derived as 774 ± 70 GPa for SWNTs inside this nanocomposite film.

  1. Microfabrication of high quality polytetrafluoroethylene films by synchrotron radiation

    International Nuclear Information System (INIS)

    Yoshida, A.; Matsumoto, E.; Yamada, H.; Okada, H.; Wakahara, A.

    2003-01-01

    We deposited polytetrafluoroethylene (PTFE) thin films both from the PTFE target by using synchrotron radiation (SR) beam and from PTFE emulsion by spin-coat process. The X-ray diffraction analyses showed a sharp peak due to (1 0 0) PTFE crystalline part, and only C-F 2 bonding was found in Fourier transform infrared spectrophotometer spectra. From electron spectroscopy for chemical analysis measurements, no impurities were found. The fabricated PTFE films were easily etched by SR beam on the limited area of the surface on a microscale through a suitably patterned mask

  2. New Methods for Thin Film Deposition and First Investigations of the use of High Temperature Superconductors for Thin Film Cavities

    CERN Document Server

    Gustafsson, Anna; Vollenberg, Wilhelmus; Seviour, Rebecca

    2010-01-01

    Niobium thin film cavities have shown good and reliable performance for LEP and LHC, although there are limitations to overcome if this technique should be used for new accelerators such as the ILC. New coating techniques like High Power Impulse Magnetron Sputtering (HiPIMS) has shown very promising results and we will report on its possible improvements for Nb thin film cavity performance. Current materials used in accelerator Superconducting Radio Frequency (SRF) technologies operate at temperatures below 4 K, which require complex cryogenic systems. Researchers have investigated the use of High Temperature Superconductors (HTS) to form RF cavities, with limited success. We propose a new approach to achieve a high-temperature SRF cavity based on the superconducting ’proximity effect’. The superconducting proximity effect is the effect through which a superconducting material in close proximity to a non-superconducting material induces a superconducting condensate in the latter. Using this effect we hope...

  3. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  4. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  5. Development of highly-ordered, ferroelectric inverse opal films using sol gel infiltration

    Science.gov (United States)

    Matsuura, N.; Yang, S.; Sun, P.; Ruda, H. E.

    2005-07-01

    Highly-ordered, ferroelectric, Pb-doped Ba0.7Sr0.3TiO3, inverse opal films were fabricated by spin-coating a sol gel precursor into a polystyrene artificial opal template followed by heat treatment. Thin films of the ferroelectric were independently studied and were shown to exhibit good dielectric properties and high refractive indices. The excellent quality of the final inverse opal film using this spin-coating infiltration method was confirmed by scanning electron microscopy images and the good correspondence between optical reflection data and theoretical simulations. Using this method, the structural and material parameters of the final ferroelectric inverse opal film were easily adjusted by template heating and through repeated infiltrations, without changes in the initial template or precursor. Also, crack-free inverse opal thin films were fabricated over areas comparable to that of the initial crack-free polystyrene template (˜100 by 100 μm2).

  6. Low energy ion implantation and high energy heavy ion irradiation in C60 films

    International Nuclear Information System (INIS)

    Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

    2001-01-01

    C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

  7. Misfit dislocations and phase transformations in high-T sub c superconducting films

    CERN Document Server

    Gutkin, M Y

    2002-01-01

    A theoretical model is suggested that describes the effects of misfit stresses on defect structures, phase content and critical transition temperature T sub c in high-T sub c superconducting films. The focus is placed on the exemplary case of YBaCuO films deposited onto LaSrAlO sub 4 substrates. It is theoretically revealed here that misfit stresses are capable of inducing phase transformations controlled by the generation of misfit dislocations in growing cuprate films. These transformations, in the framework of the suggested model, account for experimental data on the influence of the film thickness on phase content and critical temperature T sub c of superconducting cuprate films, reported in the literature. The potential role of stress-assisted phase transformations in suppression of critical current density across grain boundaries in high-T sub c superconductors is briefly discussed.

  8. High Energy Density and High Temperature Multilayer Capacitor Films for Electric Vehicle Applications

    Science.gov (United States)

    Treufeld, Imre; Song, Michelle; Zhu, Lei; Baer, Eric; Snyder, Joe; Langhe, Deepak

    2015-03-01

    Multilayer films (MLFs) with high energy density and high temperature capability (>120 °C) have been developed at Case Western Reserve University. Such films offer a potential solution for electric car DC-link capacitors, where high ripple currents and high temperature tolerance are required. The current state-of-the-art capacitors used in electric cars for converting DC to AC use biaxially oriented polypropylene (BOPP), which can only operate at temperatures up to 85 °C requiring an external cooling system. The polycarbonate (PC)/poly(vinylidene fluoride) (PVDF) MLFs have a higher permittivity compared to that of BOPP (2.3), leading to higher energy density. They have good mechanical stability and reasonably low dielectric losses at 120 °C. Nonetheless, our preliminary dielectric measurements show that the MLFs exhibit appreciable dielectric losses (20%) at 120 °C, which would, despite all the other advantages, make them not suitable for practical applications. Our preliminary data showed that dielectric losses of the MLFs at 120 °C up to 400 MV/m and 1000 Hz originate mostly from impurity ionic conduction. This work is supported by the NSF PFI/BIC Program (IIP-1237708).

  9. Radiolytic preparation of thin Au film directly on resin substrate using high-energy electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Ohkubo, Yuji, E-mail: okubo@upst.eng.osaka-u.ac.jp [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Seino, Satoshi; Nakagawa, Takashi; Kugai, Junichiro [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ueno, Koji [Japan Electron Beam Irradiation Service Ltd., 5-3 Ozushima, Izumiohtsu, Osaka 595-0074 (Japan); Yamamoto, Takao A. [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2016-04-01

    A novel method for preparing thin Au films directly on resin substrates using an electron beam was developed. The thin Au films were prepared on a resin substrate by the reduction of Au ions in an aqueous solution via irradiation with a high-energy electron beam (4.8 MeV). This reduction method required 7 s of the irradiation time of the electron beam. Furthermore, no reductant or catalyst was needed. As the concentration of Au ions in the precursor solution was increased, the amount of Au deposited on the resin substrate increased, too, and the structure of the prepared Au film changed. As a result, the film color changed as well. Cross-sectional scanning electron microscope images of the thus-prepared Au film indicated that the Au films were consisted of two layers: a particle layer and a bottom bulk layer. There was strong adhesion between the Au films and the underlying resin substrates. This was confirmed by the tape-peeling test and through ultrasonic cleaning. After both processes, Au remained on the resin substrates, while most of the particle-like moieties were removed. This indicated that the thin Au films prepared via irradiation with a high-energy electron beam adhered strongly to the resin substrates. - Highlights: • A thin gold (Au) film was formed by EBIRM for the first time. • The irradiation time of the electron beam was less than 10 s. • Thin Au films were obtained without reductant or catalyst. • Au films were consisted of two layers: a particle layer and a bottom bulk layer. • There was strong adhesion between the bottom bulk layer and the underlying resin substrates.

  10. High-quality EuO thin films the easy way via topotactic transformation

    Science.gov (United States)

    Mairoser, Thomas; Mundy, Julia A.; Melville, Alexander; Hodash, Daniel; Cueva, Paul; Held, Rainer; Glavic, Artur; Schubert, Jürgen; Muller, David A.; Schlom, Darrell G.; Schmehl, Andreas

    2015-07-01

    Epitaxy is widely employed to create highly oriented crystalline films. A less appreciated, but nonetheless powerful means of creating such films is via topotactic transformation, in which a chemical reaction transforms a single crystal of one phase into a single crystal of a different phase, which inherits its orientation from the original crystal. Topotactic reactions may be applied to epitactic films to substitute, add or remove ions to yield epitactic films of different phases. Here we exploit a topotactic reduction reaction to provide a non-ultra-high vacuum (UHV) means of growing highly oriented single crystalline thin films of the easily over-oxidized half-metallic semiconductor europium monoxide (EuO) with a perfection rivalling that of the best films of the same material grown by molecular-beam epitaxy or UHV pulsed-laser deposition. As the technique only requires high-vacuum deposition equipment, it has the potential to drastically improve the accessibility of high-quality single crystalline films of EuO as well as other difficult-to-synthesize compounds.

  11. Characterization of the microwave properties of superconducting films with high transition temperature

    International Nuclear Information System (INIS)

    Richter, W.; Klinger, M.; Daginnus, M.

    1989-01-01

    In the meantime high quality Y-Ba-Cu-O thin films were produced. The latest results show, that its surface resistances are clearly lower than the values of copper, measured at a temperature of 77 K and up to frequencies of 86 GHz. This examination had the aim to produce high-T c films with a simple and low cost method, to use them as transmission lines at frequencies up to 30 GHz and above. A screen printing process was investigated, and high-T c thick films were fabricated on several substrates. Superconducting transition temperatures up to 80 K (dc zero resistance) were obtained. The films showed no complete magnetic shielding, and its microwave surface resistances were clearly higher than that ones for copper. The a. c. Josephson effect was proved with granular structures of bulk Y-Ba-Cu-O material and with screen printed thick films. Because of its high surface resistances, these thick films are unsuitable for the use as transmission lines at high frequencies. However, the a.c. Josephson effect can be used to manufacture microwave sensors in bulk Y-Ba-Cu-O and screen printed films of Y-Ba-Cu-O, which have a favourable geometric structure. (orig.) With 16 refs., 2 tabs., 24 figs [de

  12. High quality antireflective ZnS thin films prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    Tec-Yam, S.; Rojas, J.; Rejón, V.; Oliva, A.I.

    2012-01-01

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl 2 , NH 4 NO 3 , and CS(NH 2 ) 2 were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 °C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300–800 nm wavelength range, and a reflectance below 25% in the UV–Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: ► High quality ZnS thin films were prepared by chemical bath deposition (CBD). ► Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. ► Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  13. Retardation the dewetting dynamics of ultrathin polystyrene films using highly branched aromatic molecules as additives

    International Nuclear Information System (INIS)

    Pangpaiboon, Nampueng; Traiphol, Nisanart; Promarak, Vinich; Traiphol, Rakchart

    2013-01-01

    This study introduces a new class of materials as a dewetting inhibitor for polystyrene (PS) ultrathin films. Two types of highly branched aromatic (HBA) molecules are added into PS films with thicknesses of 7 nm and 23 nm. Their concentrations range from 0.75 to 5 wt.%. The films are annealed in vacuum oven at elevated temperatures to accelerate dewetting process. Evolution of the film morphologies is followed by utilizing atomic force microscopy and optical microscopy. Contact angle measurements are used to evaluate interfacial interactions in each system. Dewetting area as a function of annealing time and HBA concentration are calculated. We have found that the presence of only 0.5 wt.% HBA can suppress the dewetting dynamics of PS films. Increasing the HBA concentration from 0.5 to 5 wt.% causes systematic decrease of the dewetting rate. In this system, the HBA molecules behave as physical cross-linking points for PS chains, which lead to the improvement of film stability. The efficiency of HBA as a dewetting inhibitor varies with molecular weight of PS while the change of HBA structure hardly affects the dewetting behaviors. - Highlights: • New method for improving stability of polystyrene (PS) thin filmsHighly branched aromatic molecules (HBA) are used to suppress the dewetting. • Thermal stability of blended PS/HBA films greatly improves. • The effectiveness of HBA varies with molecular weight of PS. • Important results for designing materials in coating application

  14. Retardation the dewetting dynamics of ultrathin polystyrene films using highly branched aromatic molecules as additives

    Energy Technology Data Exchange (ETDEWEB)

    Pangpaiboon, Nampueng [Research Unit of Advanced Ceramics, Department of Materials Science, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Traiphol, Nisanart, E-mail: Nisanart.T@chula.ac.th [Research Unit of Advanced Ceramics, Department of Materials Science, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Promarak, Vinich [School of Chemistry and Center of Excellence for Innovation in Chemistry, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Traiphol, Rakchart, E-mail: Rakchartt@nu.ac.th [Laboratory of Advanced Polymers and Nanomaterials, Department of Chemistry and Center of Excellence for Innovation in Chemistry, Faculty of Science, Naresuan University, Phitsanulok 65000 (Thailand); NANOTEC-MU Excellence Center on Intelligent Materials and Systems, Faculty of Science, Rama 6 Road, Ratchathewi, Bangkok 10400 (Thailand)

    2013-12-02

    This study introduces a new class of materials as a dewetting inhibitor for polystyrene (PS) ultrathin films. Two types of highly branched aromatic (HBA) molecules are added into PS films with thicknesses of 7 nm and 23 nm. Their concentrations range from 0.75 to 5 wt.%. The films are annealed in vacuum oven at elevated temperatures to accelerate dewetting process. Evolution of the film morphologies is followed by utilizing atomic force microscopy and optical microscopy. Contact angle measurements are used to evaluate interfacial interactions in each system. Dewetting area as a function of annealing time and HBA concentration are calculated. We have found that the presence of only 0.5 wt.% HBA can suppress the dewetting dynamics of PS films. Increasing the HBA concentration from 0.5 to 5 wt.% causes systematic decrease of the dewetting rate. In this system, the HBA molecules behave as physical cross-linking points for PS chains, which lead to the improvement of film stability. The efficiency of HBA as a dewetting inhibitor varies with molecular weight of PS while the change of HBA structure hardly affects the dewetting behaviors. - Highlights: • New method for improving stability of polystyrene (PS) thin filmsHighly branched aromatic molecules (HBA) are used to suppress the dewetting. • Thermal stability of blended PS/HBA films greatly improves. • The effectiveness of HBA varies with molecular weight of PS. • Important results for designing materials in coating application.

  15. Hydrothermal growth of highly textured BaTiO3 films composed of nanowires

    International Nuclear Information System (INIS)

    Zhou Zhi; Tang Haixiong; Sodano, Henry A; Lin Yirong

    2013-01-01

    Textured barium titanate (BaTiO 3 ) films are attracting immense research interest due to their lead-free composition and excellent piezoelectric and dielectric properties. Most synthesis methods for these films require a high temperature, leading to the formation of a secondary phase and an overall decrease in the electrical properties of the ceramic. In order to alleviate these issues, a novel fabrication method is introduced by transferring oriented rutile TiO 2 nanowires to a textured BaTiO 3 film at temperatures below 160 °C. The microstructure and thickness of the fabricated BaTiO 3 films were characterized by scanning electron microscopy, and the crystal structure and degree of orientation were evaluated by x-ray diffraction patterns using the Lotgering method. It is shown that the thickness of the BaTiO 3 film can be controlled by the length of TiO 2 nanowire array template, and the degree of orientation of the textured BaTiO 3 films is highly dependent on the film thickness; the crystallographic orientation has been measured to reach up to 87%. The relative dielectric constant (ε r = 1300) and ferroelectric properties (P r = 2.7 μC cm −2 , E c = 4.0 kV mm −1 ) of the textured BaTiO 3 films were also characterized to demonstrate their potential application in sensors, random access memory, and micro-electromechanical systems. (paper)

  16. Chemical state analysis of oxide thin films using a high resolution double crystal X-ray fluorescence spectrometer

    International Nuclear Information System (INIS)

    Masuda, Hirohisa; Morinaga, Kenji; Ohta, Yoshio.

    1995-01-01

    The chemical state analysis of r.f.-sputtered amorphous oxide thin films was determined by a high resolution X-ray fluorescence spectrometer with double crystals. The polymerization degree of silicate anions in the silicate film was as same as a target (α-Quartz). The oxygen coordination number of Al 3+ ions in the aluminate film was different from a target (α-Al 2 O 3 ), and it was a mixture of 4 and 6 in a spinel-like structure. In CaO-SiO 2 and CaO-Al 2 O 3 films, when the film thickness is thin at the beginning of sputtering, the composition of films are in the shortage of CaO. But when the film thickness become thicker, the composition of films become as same as the target. From the results above, the chemical state of films and their variations with film thickness can be clarified by using the apparatus. (author)

  17. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325 °C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200 μm in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  18. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    International Nuclear Information System (INIS)

    Sandstrom, R.L.; Giess, E.A.; Gallagher, W.J.; Segmueller, A.; Cooper, E.I.; Chisholm, M.F.; Gupta, A.; Shinde, S.; Laibowitz, R.B.

    1988-01-01

    We demonstrate that lanthanum gallate (LaGaO 3 ) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa 2 Cu 3 O/sub 7-//sub x/, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε≅25) and low dielectric losses. Epitaxial YBa 2 Cu 3 O/sub 7-//sub x/ films grown on LaGaO 3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K

  19. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    Science.gov (United States)

    Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

    1988-11-01

    It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

  20. High magnetic field quantum transport in Au nanoparticle–cellulose films

    International Nuclear Information System (INIS)

    Turyanska, L; Makarovsky, O; Patanè, A; Kozlova, N V; Liu, Z; Li, M; Mann, S

    2012-01-01

    We report the magneto-transport properties of cellulose films comprising interconnected networks of gold nanoparticles (Au NPs). Cellulose is a biopolymer that can be made electrically conducting by cellulose regeneration in Au NP dispersions. The mechanism of electronic conduction in the Au–cellulose films changes from variable range hopping to metallic-like conduction with decreasing resistivity. Our experiments in high magnetic fields (up to 45 T) reveal negative magnetoresistance in the highly resistive films. This is attributed to the spin polarization of the Au NPs and the magnetic field induced suppression of electron spin flips during spin-polarized tunneling in the NP network. (paper)

  1. Macroporous 'bubble' graphene film via template-directed ordered-assembly for high rate supercapacitors.

    Science.gov (United States)

    Chen, Cheng-Meng; Zhang, Qiang; Huang, Chun-Hsien; Zhao, Xiao-Chen; Zhang, Bing-Sen; Kong, Qing-Qiang; Wang, Mao-Zhang; Yang, Yong-Gang; Cai, Rong; Sheng Su, Dang

    2012-07-21

    A three-dimensional bubble graphene film, with controllable and uniform macropores and tailorable microstructure, was fabricated by a facile hard templating strategy and exhibit extraordinary electrochemical capacitance with high rate capability (1.0 V s(-1)).

  2. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

  3. High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

    International Nuclear Information System (INIS)

    Jia, Haijun; Saha, Jhantu K.; Ohse, Naoyuki; Shirai, Hajime

    2007-01-01

    A high electron density (> 10 11 cm -3 ) and low electron temperature (1-2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of ∼ 65 A/s is achieved at a substrate temperature of 150 deg. C with a high Raman crystallinity and a low defect density of (1-2) x 10 16 cm -3 . Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of H α /SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity

  4. [High-contrast resolution of film-screen systems in oral and maxillofacial radiology].

    Science.gov (United States)

    Kaeppler, G; Reinert, S

    2007-11-01

    The aim was to determine differences in high-contrast resolution of film-screen systems used in dental panoramic and cephalometric radiography by calculating the modulation transfer function (MTF). The radiographs used to determine the MTF should be taken by the same x-ray units as those used for patient radiographs. The MTF was determined using a lead grid and according to DIN 6867-2 for 11 film-screen systems (speed 250, speed class 200 and 400) used in dental radiographic diagnostics. The optical density was measured using a microdensitometer developed by PTB. With 10% of the modulation transfer factor, newly developed film-screen systems (speed class 200 and 400) demonstrated a resolution of 4.9 to 6 line pairs per mm (panoramic radiography). In cephalometric radiography a film-screen system (speed class 400 and green-sensitive film) had a resolution of 4.2 line pairs per mm and surpassed two film-screen systems (speed class 400, resolution of 3 line pairs per mm, blue-sensitive films). The relevance of this study is underlined by the diagnostic reference doses defined in the German X-ray Ordinance (RöV) which are also intended for dentistry. Film-screen systems (speed 250, speed class 200) previously used in dental panoramic and cephalometric radiography can be replaced by newly developed film-screen systems (speed class 400). In dental radiography dose reductions are possible with film-screen systems (speed class 400) without impairing diagnostic accuracy. The introduction of newly developed film-screen systems (speed class 400) requires lower milliampere-seconds and therefore an adjustment of the x-ray units to lower milliampere settings.

  5. Influence of ion beam mixing on the growth of high temperature oxide superconducting thin film

    International Nuclear Information System (INIS)

    Bordes, N.; Rollett, A.D.; Cohen, M.R.; Nastasi, M.

    1989-01-01

    The superconducting properties of high temperature superconductor thin films are dependent on the quality of the substrate used to grow these films. In order to maximize the lattice matching between the superconducting film and the substrate, we have used a YBa 2 Cu 3 O 7 thin film deposited on left-angle 100 right-angle SrTiO 3 as a template. The first film was prepared by coevaporation of Y, BaF 2 and Cu on left-angle 100 right-angle SrTiO 3 , followed by an anneal in ''wet'' oxygen at 850 degree C. This film showed a sharp transition at about 90 K. A thicker layer of about 5000 A was then deposited on top of this first 2000 angstrom film, using the same procedure. After the post anneal at 850 degree C, the transition took place at 80 K and no epitaxy of the second film was observed. Ion beam mixing at 400 degree C, using 400 keV O ions was done at the interface of the two films (the second one being not annealed). After the post anneal, the film displayed an improved Tc at 90K. Moreover, epitaxy was shown to take place from the interface SrTiO 3 -123 film towards the surface and was dependent of the dose. These results will be discussed from the data obtained from Rutherford backscattering spectroscopy (RBS) combined with channeling experiments, x-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. 8 refs., 2 figs., 2 tabs

  6. Sputtered highly oriented PZT thin films for MEMS applications

    Science.gov (United States)

    Kalpat, Sriram S.

    Recently there has been an explosion of interest in the field of micro-electro-mechanical systems (MEMS). MEMS device technology has become critical in the growth of various fields like medical, automotive, chemical, and space technology. Among the many applications of ferroelectric thin films in MEMS devices, microfluidics is a field that has drawn considerable amount of research from bio-technology industries as well as chemical and semiconductor manufacturing industries. PZT thin films have been identified as best suited materials for micro-actuators and micro-sensors used in MEMS devices. A promising application for piezoelectric thin film based MEMS devices is disposable drug delivery systems that are capable of sensing biological parameters, mixing and delivering minute and precise amounts of drugs using micro-pumps or micro mixers. These devices call for low driving voltages, so that they can be battery operated. Improving the performance of the actuator material is critical in achieving battery operated disposal drug delivery systems. The device geometry and power consumption in MEMS devices largely depends upon the piezoelectric constant of the films, since they are most commonly used to convert electrical energy into a mechanical response of a membrane or cantilever and vice versa. Phenomenological calculation on the crystal orientation dependence of piezoelectric coefficients for PZT single crystal have reported a significant enhancement of the piezoelectric d33 constant by more than 3 times along [001] in the rhombohedral phase as compared to the conventionally used orientation PZT(111) since [111] is the along the spontaneous polarization direction. This could mean considerable improvement in the MEMS device performance and help drive the operating voltages lower. The motivation of this study is to investigate the crystal orientation dependence of both dielectric and piezoelectric coefficients of PZT thin films in order to select the appropriate

  7. Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment

    Energy Technology Data Exchange (ETDEWEB)

    Krylov, P. N., E-mail: ftt@uni.udm.ru; Zakirova, R. M.; Fedotova, I. V. [Udmurt State University (Russian Federation)

    2013-10-15

    A variation in the properties of indium-tin-oxide (ITO) films obtained by the method of reactive magnetron sputtering with simultaneous ion treatment is reported. The ITO films feature the following parameters in the optical range of 450-1100 nm: a transmission coefficient of 80%, band gap of 3.50-3.60 eV, and a refractive index of 1.97-2.06. All characteristics of the films depend on the ion-treatment current. The latter, during the course of deposition, reduces the resistivity of the ITO films with the smallest value of the resistivity being equal to 2 Multiplication-Sign 10{sup -3} {Omega} cm. The degradation of films with a high resistivity when kept in air is observed.

  8. Degradation of ZrN films at high temperature under controlled atmosphere

    International Nuclear Information System (INIS)

    Lu, F.-H.; Lo, W.-Z.

    2004-01-01

    The degradation of ZrN films deposited onto Si substrates by unbalanced magnetron sputtering was investigated over temperatures of 300-1200 deg. C in different atmospheres by analyzing changes in color and appearance, as well as microstructures. The atmospheres contained air, nitrogen, and forming gas (N 2 /H 2 =9), which exhibited drastically different oxygen/nitrogen partial pressure ratios. The resultant degradation included mainly color changes and formation of blisters on the film surface. Color change was associated with the oxidation of the nitride film, which was analyzed by looking into the Gibbs free-energy changes at various temperatures and oxygen partial pressures. Two types of blisters occurred at different temperature ranges. Several large round blisters, denoted as A-type blisters, occurring at low temperatures originated from the large residual stress in the films. Many small irregular blisters, denoted as B-type blisters, appearing at relatively high temperatures resulted from the oxidation of the film

  9. Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

    Directory of Open Access Journals (Sweden)

    Charith Jayanada Koswaththage

    2016-11-01

    Full Text Available InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.

  10. Highly repeatable nanoscale phase coexistence in vanadium dioxide films

    Science.gov (United States)

    Huffman, T. J.; Lahneman, D. J.; Wang, S. L.; Slusar, T.; Kim, Bong-Jun; Kim, Hyun-Tak; Qazilbash, M. M.

    2018-02-01

    It is generally believed that in first-order phase transitions in materials with imperfections, the formation of phase domains must be affected to some extent by stochastic (probabilistic) processes. The stochasticity would lead to unreliable performance in nanoscale devices that have the potential to exploit the transformation of physical properties in a phase transition. Here we show that stochasticity at nanometer length scales is completely suppressed in the thermally driven metal-insulator transition (MIT) in sputtered vanadium dioxide (V O2 ) films. The nucleation and growth of domain patterns of metallic and insulating phases occur in a strikingly reproducible way. The completely deterministic nature of domain formation and growth in films with imperfections is a fundamental and unexpected finding about the kinetics of this material. Moreover, it opens the door for realizing reliable nanoscale devices based on the MIT in V O2 and similar phase-change materials.

  11. Facile synthesis of cobalt-doped zinc oxide thin films for highly efficient visible light photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Altintas Yildirim, Ozlem, E-mail: ozlemaltintas@gmail.com [Department of Metallurgical and Materials Engineering, Selcuk University, Konya (Turkey); Arslan, Hanife; Sönmezoğlu, Savaş [Department of Metallurgical and Materials Engineering, Karamanoglu Mehmetbey University, Karaman (Turkey); Nanotechnology R& D Laboratory, Karamanoglu Mehmetbey University, Karaman (Turkey)

    2016-12-30

    Highlights: • Photocatalytically active Co-ZnO thin film was obtained by sol-gel method. • Co{sup 2+} doping narrowed the band gap of pure ZnO to an extent of 3.18 eV. • Co-ZnO was effective in MB degradation under visible light. • Optimum dopant content to show high performance was 3 at.%. - Abstract: Cobalt-doped zinc oxide (Co:ZnO) thin films with dopant contents ranging from 0 to 5 at.% were prepared using the sol–gel method, and their structural, morphological, optical, and photocatalytic properties were characterized. The effect of the dopant content on the photocatalytic properties of the films was investigated by examining the degradation behavior of methylene blue (MB) under visible light irradiation, and a detailed investigation of their photocatalytic activities was performed by determining the apparent quantum yields (AQYs). Co{sup 2+} ions were observed to be substitutionally incorporated into Zn{sup 2+} sites in the ZnO crystal, leading to lattice parameter constriction and band gap narrowing due to the photoinduced carriers produced under the visible light irradiation. Thus, the light absorption range of the Co:ZnO films was improved compared with that of the undoped ZnO film, and the Co:ZnO films exhibited highly efficient photocatalytic activity (∼92% decomposition of MB after 60-min visible light irradiation for the 3 at.% Co:ZnO film). The AQYs of the Co:ZnO films were greatly enhanced under visible light irradiation compared with that of the undoped ZnO thin film, demonstrating the effect of the Co doping level on the photocatalytic activity of the films.

  12. Thin Film Technology of High-Critical-Temperature Superconducting Electronics.

    Science.gov (United States)

    1985-12-11

    ANALISIS OF THIN-FILM SUPERCONDUCTORS J. Talvacchio, M. A. Janocko, J. R. Gavaler, and A...in the areas of substrate preparation, niobum nitride, nlobium-tin, and molybdenum-rhenium. AN INTEGRATED DEPOSITION AND ANALISI - FACILITT The four...mobility low (64). The voids are separating 1-3 nm clusters of dense deposit. At low deposition temperatures this microstructure will persist near

  13. Preparation of the Crosslinked Polyethersulfone Films by High Temperature Electron-Beam Irradiation

    International Nuclear Information System (INIS)

    Li, J.

    2006-01-01

    The aromatic polymers, mainly so called engineering plastics, were famed for the good stability under irradiation. However, high temperature irradiation of the aromatic polymers can result the crosslinked structure, due to the improved molecular mobility. Polyethersulfone (PES) is a wide used engineering plastic because of the high performance and high thermal stability. PES films were irradiated by electron-beam under nitrogen atmosphere above the glass transition temperature and then the covalently crosslinked PES (RX-PES) films were obtained. The irradiations were also performed at ambient temperature for comparison. The network structure formation of the RX-PES films was confirmed by the appearance of the gel, which were measured by soaking the irradiated PES films in the N,N-dimethylformamide (DMF) at room temperature. When the PES films were irradiated to 300 kGy, there was gel appeared. The gel percent increased with the increasing in the absorbed dose, and saturated when the absorbed dose exceeded 1200 kGy. However, there was no gel formed for the PES films irradiated at ambient temperature even to 2250 kGy. The G(S) and G(X) were calculated according to the Y-crosslinking mechanism. The results values are consistent in error range. G(S) of 0.10 and G(X) of 0.23 were obtained. As calculated, almost all the macromolecular radicals produced by chain scission were used for crosslinking. Also, the glass transition temperature of the RX-PES films increased with the increasing in the absorbed doses, while the glass transition temperature of the PES films irradiated at ambient temperature decreased with the increasing in the absorbed doses. The blending films of the PES with FEP or ETFE were prepared and the high temperature irradiation effects were also studies

  14. High temperature polymer film dielectrics for aerospace power conditioning capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Venkat, Narayanan, E-mail: venkats3@gmail.co [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Dang, Thuy D. [Air Force Research Laboratory-Nanostructured and Biological Materials Branch (AFRL/RXBN) (United States); Bai Zongwu; McNier, Victor K. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); DeCerbo, Jennifer N. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States); Tsao, B.-H. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Stricker, Jeffery T. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States)

    2010-04-15

    Polymer dielectrics are the preferred materials of choice for capacitive energy-storage applications because of their potential for high dielectric breakdown strengths, low dissipation factors and good dielectric stability over a wide range of frequencies and temperatures, despite having inherently lower dielectric constants relative to ceramic dielectrics. They are also amenable to large area processing into films at a relatively lower cost. Air Force currently has a strong need for the development of compact capacitors which are thermally robust for operation in a variety of aerospace power conditioning applications. While such applications typically use polycarbonate (PC) dielectric films in wound capacitors for operation from -55 deg. C to 125 deg. C, future power electronic systems would require the use of polymer dielectrics that can reliably operate up to elevated temperatures in the range of 250-350 deg. C. The focus of this research is the generation and dielectric evaluation of metallized, thin free-standing films derived from high temperature polymer structures such as fluorinated polybenzoxazoles, post-functionalized fluorinated polyimides and fluorenyl polyesters incorporating diamond-like hydrocarbon units. The discussion is centered mainly on variable temperature dielectric measurements of film capacitance and dissipation factor and the effects of thermal cycling, up to a maximum temperature of 350 deg. C, on film dielectric performance. Initial studies clearly point to the dielectric stability of these films for high temperature power conditioning applications, as indicated by their relatively low temperature coefficient of capacitance (TCC) (approx2%) over the entire range of temperatures. Some of the films were also found to exhibit good dielectric breakdown strengths (up to 470 V/mum) and a film dissipation factor of the order of <0.003 (0.3%) at the frequency of interest (10 kHz) for the intended applications. The measured relative dielectric

  15. Titanium dioxide thin films for high temperature gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Seeley, Zachary Mark; Bandyopadhyay, Amit; Bose, Susmita, E-mail: sbose@wsu.ed

    2010-10-29

    Titanium dioxide (TiO{sub 2}) thin film gas sensors were fabricated via the sol-gel method from a starting solution of titanium isopropoxide dissolved in methoxyethanol. Spin coating was used to deposit the sol on electroded aluminum oxide (Al{sub 2}O{sub 3}) substrates forming a film 1 {mu}m thick. The influence of crystallization temperature and operating temperature on crystalline phase, grain size, electronic conduction activation energy, and gas sensing response toward carbon monoxide (CO) and methane (CH{sub 4}) was studied. Pure anatase phase was found with crystallization temperatures up to 800 {sup o}C, however, rutile began to form by 900 {sup o}C. Grain size increased with increasing calcination temperature. Activation energy was dependent on crystallite size and phase. Sensing response toward CO and CH{sub 4} was dependent on both calcination and operating temperatures. Films crystallized at 650 {sup o}C and operated at 450 {sup o}C showed the best selectivity toward CO.

  16. Highly transparent, flexible, and thermally stable superhydrophobic ORMOSIL aerogel thin films.

    Science.gov (United States)

    Budunoglu, Hulya; Yildirim, Adem; Guler, Mustafa O; Bayindir, Mehmet

    2011-02-01

    We report preparation of highly transparent, flexible, and thermally stable superhydrophobic organically modified silica (ORMOSIL) aerogel thin films from colloidal dispersions at ambient conditions. The prepared dispersions are suitable for large area processing with ease of coating and being directly applicable without requiring any pre- or post-treatment on a variety of surfaces including glass, wood, and plastics. ORMOSIL films exhibit and retain superhydrophobic behavior up to 500 °C and even on bent flexible substrates. The surface of the films can be converted from superhydrophobic (contact angle of 179.9°) to superhydrophilic (contact angle of <5°) by calcination at high temperatures. The wettability of the coatings can be changed by tuning the calcination temperature and duration. The prepared films also exhibit low refractive index and high porosity making them suitable as multifunctional coatings for many application fields including solar cells, flexible electronics, and lab on papers.

  17. High-order optical nonlinearities in nanocomposite films dispersed with semiconductor quantum dots at high concentrations

    International Nuclear Information System (INIS)

    Tomita, Yasuo; Matsushima, Shun-suke; Yamagami, Ryu-ichi; Jinzenji, Taka-aki; Sakuma, Shohei; Liu, Xiangming; Izuishi, Takuya; Shen, Qing

    2017-01-01

    We describe the nonlinear optical properties of inorganic-organic nanocomposite films in which semiconductor CdSe quantum dots as high as 6.8 vol.% are dispersed. Open/closed Z-scan measurements, degenerate multi-wave mixing and femtosecond pump-probe/transient grating measurements are conducted. It is shown that the observed fifth-order optical nonlinearity has the cascaded third-order contribution that becomes prominent at high concentrations of CdSe QDs. It is also shown that there are picosecond-scale intensity-dependent and nanosecond-scale intensity-independent decay components in absorptive and refractive nonlinearities. The former is caused by the Auger process, while the latter comes from the electron-hole recombination process. (paper)

  18. The film thickness dependent thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Xiao Xiudi; Xu Gang, E-mail: xiudixiao@163.com; Xiong Bin; Chen Deming; Miao Lei [Chinese Academy of Sciences, Key Laboratory of Renewable Energy and Gas Hydrates, Guangzhou Institute of Energy Conversion (China)

    2012-03-15

    The monolayer Al{sub 2}O{sub 3}:Ag thin films were prepared by magnetron sputtering. The microstructure and optical properties of thin film after annealing at 700 Degree-Sign C in air were characterized by transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometer. It revealed that the particle shape, size, and distribution across the film were greatly changed before and after annealing. The surface plasmon resonance absorption and thermal stability of the film were found to be strongly dependent on the film thickness, which was believed to be associated with the evolution process of particle diffusion, agglomeration, and evaporation during annealing at high temperature. When the film thickness was smaller than 90 nm, the film SPR absorption can be attenuated until extinct with increasing annealing time due to the evaporation of Ag particles. While the film thickness was larger than 120 nm, the absorption can keep constant even after annealing for 64 h due to the agglomeration of Ag particles. On the base of film thickness results, the multilayer Al{sub 2}O{sub 3}:Ag solar selective thin films were prepared and the thermal stability test illustrated that the solar selectivity of multilayer films with absorbing layer thickness larger than 120 nm did not degrade after annealing at 500 Degree-Sign C for 70 h in air. It can be concluded that film thickness is an important factor to control the thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers.

  19. Non-invasive pre-lens tear film assessment with high-speed videokeratoscopy.

    Science.gov (United States)

    Llorens-Quintana, Clara; Mousavi, Maryam; Szczesna-Iskander, Dorota; Iskander, D Robert

    2018-02-01

    To evaluate the effect of two types of daily contact lenses (delefilcon A and omafilcon A) on the tear film and establish whether it is dependent on pre-corneal tear film characteristics using a new method to analyse high-speed videokeratoscopy recordings, as well as to determine the sensitivity of the method in differentiating between contact lens materials on eye. High-speed videokeratoscopy recordings were analysed using a custom made automated algorithm based on a fractal dimension approach that provides a set of parameters directly related to tear film stability. Fifty-four subjects participated in the study. Baseline measurements, in suppressed and natural blinking conditions, were taken before subjects were fitted with two different daily contact lenses and after four hours of contact lens wear. The method for analysing the stability of the tear film provides alternative parameters to the non-invasive break up time to assess the quality of the pre-corneal and pre-lens tear film. Both contact lenses significantly decreased the quality of the tear film in suppressed and natural blinking conditions (pfilm characteristics were not correlated with the decrease in pre-lens tear film quality. High-speed videokeratoscopy equipped with an automated method to analyse the dynamics of the tear film is able to distinguish between contact lens materials in vivo. Incorporating the assessment of pre-lens tear film to the clinical practice could aid improving contact lens fitting and understand contact lens comfort. Copyright © 2017 British Contact Lens Association. Published by Elsevier Ltd. All rights reserved.

  20. Electrochemical characterization of oxide film formed at high temperature on Alloy 690

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, Geogy J., E-mail: gja@barc.gov.in [Materials Science Division, BARC, Mumbai 400 085 (India); Bhambroo, Rajan [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India); Kain, V. [Materials Science Division, BARC, Mumbai 400 085 (India); Shekhar, R. [CCCM, BARC, Hyderabad 500 062 (India); Dey, G.K. [Materials Science Division, BARC, Mumbai 400 085 (India); Raja, V.S. [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer GD-QMS studies of high temperature oxide film formed on Alloy 690. Black-Right-Pointing-Pointer Defect density reduced with increase in temperature. Black-Right-Pointing-Pointer Electrochemical behaviour of oxide film correlated to the Cr-content in oxide. - Abstract: High temperature passivation studies on Alloy 690 were carried out in lithiated water at 250 Degree-Sign C, 275 Degree-Sign C and 300 Degree-Sign C for 72 h. The passive films were characterized by glow discharge-quadrupole mass spectroscopy (GD-QMS) for compositional variation across the depth and micro laser Raman spectroscopy for oxide composition on the surface. The defect density in the oxide films was established from the Mott-Schottky analysis using electrochemical impedance spectroscopy. Electrochemical experiments at room temperature in chloride medium revealed best passivity behaviour by the oxide film formed at 300 Degree-Sign C for 72 h. The electrochemical studies were correlated to the chromium (and oxygen) content of the oxide films. Autoclaving at 300 Degree-Sign C resulted in the best passive film formation on Alloy 690 in lithiated water.

  1. High quality TbMnO3 films deposited on YAlO3

    International Nuclear Information System (INIS)

    Glavic, Artur; Voigt, Joerg; Persson, Joerg; Su, Yixi; Schubert, Juergen; Groot, Joost de; Zande, Willi; Brueckel, Thomas

    2011-01-01

    Research highlights: → We found a good substrate and suitable deposition parameters to create untwinned, epitaxial thin films of TbMnO 3 . → Laboratory experiments prove the crystalline quality of the films. → We were able to measure the micro magnetic structure in the films by polarized neutron diffraction (to our knowledge the first neutron investigations on TbMnO 3 thin films). - Abstract: High quality thin films of TbMnO 3 were grown by pulsed laser deposition on orthorhombicYAlO 3 (1 0 0). The interface and surface roughness of a 55 nm thick film were probed by X-ray reflectometry and atomic force microscopy, yielding a roughness of 1 nm. X-ray diffraction revealed untwinned films and a small mosaic spread of 0.04 o and 0.2 o for out-of-plane and in-plane reflections, respectively. This high degree of epitaxy was also confirmed by Rutherford backscattering spectrometry. Using polarized neutron diffraction we could identify a magnetic structure with the propagation vector (0 0.27 0), identical to the bulk magnetic structure of TbMnO 3 .

  2. Facile synthesis of high strength hot-water wood extract films with oxygen-barrier performance

    Science.gov (United States)

    Chen, Ge-Gu; Fu, Gen-Que; Wang, Xiao-Jun; Gong, Xiao-Dong; Niu, Ya-Shuai; Peng, Feng; Yao, Chun-Li; Sun, Run-Cang

    2017-01-01

    Biobased nanocomposite films for food packaging with high mechanical strength and good oxygen-barrier performance were developed using a hot-water wood extract (HWE). In this work, a facile approach to produce HWE/montmorillonite (MMT) based nanocomposite films with excellent physical properties is described. The focus of this study was to determine the effects of the MMT content on the structure and mechanical properties of nanocomposites and the effects of carboxymethyl cellulose (CMC) on the physical properties of the HWE-MMT films. The experimental results suggested that the intercalation of HWE and CMC in montmorillonite could produce compact, robust films with a nacre-like structure and multifunctional characteristics. This results of this study showed that the mechanical properties of the film designated FCMC0.05 (91.5 MPa) were dramatically enhanced because the proportion of HWE, MMT and CMC was 1:1.5:0.05. In addition, the optimized films exhibited an oxygen permeability below 2.0 cm3 μm/day·m2·kPa, as well as good thermal stability due to the small amount of CMC. These results provide a comprehensive understanding for further development of high-performance nanocomposites which are based on natural polymers (HWE) and assembled layered clays (MMT). These films offer great potential in the field of sustainable packaging.

  3. Effect of high-pressure food processing on the physical properties of synthetic and biopolymer films.

    Science.gov (United States)

    Galotto, M J; Ulloa, P A; Guarda, A; Gavara, R; Miltz, J

    2009-08-01

    The effect of high-pressure processing on 2 plastic food packaging films, a biopolymer (PLASiOx/PLA) and a synthetic polymer (PET-AlOx), was studied. Samples in direct contact with olive oil, as a fatty food simulant, and distilled water, as an aqueous simulant, were subjected to a pressure of 500MPa for 15 min at 50 degrees C. The mechanical, thermal, and gas barrier properties of both films were evaluated after the high-pressure processing (HPP) and compared to control samples that have not undergone this treatment. Significant changes in all properties were observed in both films after the HPP treatment and in contact with the food simulants. In both films an induced crystallization was noticed. In the PLASiOx/PLA film the changes were larger when in contact with water that probably acted as a plasticizer. In the PET-AlOx film the changes in properties were attributed to the formation of pinholes and cracks during the HPP treatment. In this film, most of the properties changed more in the presence of oil as the food simulant.

  4. Preparation and Analysis of Platinum Thin Films for High Temperature Sensor Applications

    Science.gov (United States)

    Wrbanek, John D.; Laster, Kimala L. H.

    2005-01-01

    A study has been made of platinum thin films for application as high temperature resistive sensors. To support NASA Glenn Research Center s high temperature thin film sensor effort, a magnetron sputtering system was installed recently in the GRC Microsystems Fabrication Clean Room Facility. Several samples of platinum films were prepared using various system parameters to establish run conditions. These films were characterized with the intended application of being used as resistive sensing elements, either for temperature or strain measurement. The resistances of several patterned sensors were monitored to document the effect of changes in parameters of deposition and annealing. The parameters were optimized for uniformity and intrinsic strain. The evaporation of platinum via oxidation during annealing over 900 C was documented, and a model for the process developed. The film adhesion was explored on films annealed to 1000 C with various bondcoats on fused quartz and alumina. From this compiled data, a list of optimal parameters and characteristics determined for patterned platinum thin films is given.

  5. Performance of high amylose starch-composited gelatin films influenced by gelatinization and concentration.

    Science.gov (United States)

    Wang, Wenhang; Wang, Kun; Xiao, Jingdong; Liu, Yaowei; Zhao, Yana; Liu, Anjun

    2017-01-01

    In order to study the impact of starch in film performance, high amylose corn starch was composited in gelatin films under different gelatinization conditions and, in high and low concentrations (10 and 50wt.%). It was found that hot water gelatinized starch (Gel-Shw) increased film mechanical strength and was dependent upon the starch concentration. The addition of an alkali component to the starch significantly enhanced the swelling of the starch granules and expedited the gelatinization process. Incorporation of starch, especially the alkalized starch (Sha), into the gelatin films decreased film solubility which improved its water resistance and water vapor permeability (WVP). Multiple techniques (DSC, TGA, FT-IR, and XRD) were used to characterize the process and results, including the crosslinking of the dissolved starch molecules and the particles formed from gelatinized starch during retrogradation process, which played an important role in improving the thermal stability of the composited gelatin films. Overall, the starch-gelatin composition provides a potential approach to improve gelatin film performance and benefit its applications in the food industry. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. Fabrication of a flexible polycarbonate/porphyrin film dosimeter for high dose dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Feizi, Shahzad [Nuclear Science and Technology Research Institute (NSTRI), Tehran (Iran, Islamic Republic of). Radiation Application Research School

    2017-10-01

    Dyed polycarbonate (PC) Radiochromic films with 20 μm thickness were prepared by casting of organic solution of PC containing 0.5 wt.% tetrakis (pentafluorophenyl) porphyrin (TPPF{sub 20}) on a glass petri dish. Characterization of the film as a routine dosimeter was studied. On subjecting PC/TPPF{sub 20} film dosimeter to gamma radiation, a gradual decrease in the color of films was observed. The sensitivity of these films and the linearity of dose-response curves were studied under {sup 60}Co γ-rays expose in dose range of 0-100 kGy. The results were compared with the commercial and non-commercial dosimeters. Experimental parameters including humidity, temperature and pre-irradiation (shelf-life) and post-irradiation storage in dark and in indirect sunlight were examined. The maximum absorbance of soret band of TPPF{sub 20} had a bathochromic shift and appeared at 414 nm which remained intact in the investigated dose range. The dyed films characteristics were found to be stable enough in media with high degrees of temperature and humidity. The results indicate that radiation induced decoloration of PC/TPPF{sub 20} films can be reliably used in high dose dosimetry.

  7. High PEC conversion efficiencies from CuSe film electrodes modified with metalloporphyrin/polyethylene matrices

    International Nuclear Information System (INIS)

    Zyoud, Ahed; Al-Kerm, Rola S.; Al-Kerm, Rana S.; Waseem, Mansur; Mohammed, H.S. Helal; Park, DaeHoon; Campet, Guy; Sabli, Nordin; Hilal, Hikmat S.

    2015-01-01

    Enhancement of hole-transfer across CuSe electrode/liquid junction can be facilitated by coating with metalloporphyrin complexes embedded inside polyethylene matrices. - Highlights: • CuSe films were electrochemically deposited onto FTO/Glass • Annealing CuSe film electrodes enhanced PEC characteristics • PEC characteristics were further enhanced by metalloporphyrin/polyethylene matrices, yielding ∼15% efficiency • Matrix behavior as charge transfer mediator enhanced electrode conversion efficiency and stability - Abstract: Electrodeposited CuSe film electrodes have been prepared onto FTO/glass by a facile method based on earlier methods described for other systems. The films were characterized, modified by annealing and further characterized. The films were then modified by coating with tetra(-4-pyridyl) pophyrinato-manganese (MnTPyP) complexes embedded inside commercial polyethylene (PE) matrices. The effects of modifications on different film properties, such as X-ray diffraction (XRD) patterns, surface morphology, photoluminescence (PL) spectra and electronic absorption spectra were investigated. Compared with other thin film electrode systems, very high photoelectrochemical (PEC) conversion efficiency values have been observed here. Pre-annealing the CuSe films at 150°C for 2 h, followed by attaching the MnTPyP/PE matrices remarkably enhanced their PEC characteristics. The conversion efficiency was significantly enhanced, from less than 1.0% to more than 15%. Fill factor (FF) was also enhanced from ∼30% to ∼80%. Values of open-circuit potential (V OC ) and short-circuit current (J SC ) were significantly enhanced. While annealing affects uniformity, particle inter-connection and surface texture of the CuSe films, the MnTPyP complex species behaves as an additional charge-transfer mediator across the film/electrolyte junction. Optimization of PEC characteristics, using different deposition times, different annealing temperatures, different

  8. High quality uniform YBCO film growth by the metalorganic deposition using trifluoroacetates

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S.S., E-mail: wangssh@tsinghua.edu.cn [Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Beihang University), Ministry of Education, Beijing 100191 (China); Beijing Dingchen Superconducting Technology Co., Ltd., Beijing 100084 (China); Zhang, Z.L. [Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Beihang University), Ministry of Education, Beijing 100191 (China); Wang, L. [Applied superconductivity research center, Department of Physics, Tsinghua University, Beijing 100084 (China); Gao, L.K.; Liu, J. [Beijing Dingchen Superconducting Technology Co., Ltd., Beijing 100084 (China)

    2017-03-15

    Highlights: • High quality double-sided YBCO films are fabricated on LaAlO3 substrates by TFA-MOD method with diameters up to 2 in. • Large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive Jc in excess of 6 MA/cm{sup 2} and low R{sub s} (10 GHz) of 0.3 mΩ at 77 K were obtained. • It will greatly promoted the research and applications of large-area YBCO films by chemical solution method. - Abstract: A need exists for the large-area superconducting YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) films with high critical current density for microwave communication and/or electric power applications. Trifluoroacetic metalorganic (TFA-MOD) method is a promising low cost technique for large-scale production of YBCO films, because it does not need high vacuum device and is easily applicable to substrates of various shape and size. In this paper, double-sided YBCO films with maximum 2 in diameter were prepared on LaAlO{sub 3} substrates by TFA-MOD method. Inductive critical current densitiy J{sub c}, microwave surface resistance R{sub s}, as well as the microstructure were characterized. A newly homemade furnace system was used to epitaxially grown YBCO films, which can improve the uniformity of YBCO film significantly by gas supply and temperature distribution proper design. Results showed that the large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive J{sub c} in excess of 6 MA/cm{sup 2} with uniform distribution, and low R{sub s} (10 GHz) below 0.3 mΩ at 77 K were obtained. Andthe film filter may be prepared to work at temperatures lower than 74 K. These results are very close to the highest value of YBCO films made by conventional vacuum method, so we show a very promising route for large-scale production of high quality large-area YBCO superconducting films at a lower cost.

  9. Stability of amorphous Ge-As(Sb)-Se films to high-energy electron irradiation

    International Nuclear Information System (INIS)

    Savchenko, N.D.

    1999-01-01

    The results of the investigation of high-energy electron (6.5 MeV) irradiation effect on structure, optical, electrical and mechanical properties for thin films obtained by thermal evaporation of Ge-As-Se and Ge-Sb-Se glasses have been presented. The electron-induced changes in film properties versus average coordination number and relative free volume for bulk glasses have been discussed. It has been found that the higher radiation stability is characteristic to the films deposited from the glasses with the lower relative free volume

  10. High power density supercapacitor electrodes of carbon nanotube films by electrophoretic deposition

    International Nuclear Information System (INIS)

    Du Chunsheng; Pan Ning

    2006-01-01

    Carbon nanotube thin films have been successfully fabricated by the electrophoretic deposition technique. The supercapacitors built from such thin film electrodes have a very small equivalent series resistance, and a high specific power density over 20 kW kg -1 was thus obtained. More importantly, the supercapacitors showed superior frequency response. Our study also demonstrated that these carbon nanotube thin films can serve as coating layers over ordinary current collectors to drastically enhance the electrode performance, indicating a huge potential in supercapacitor and battery manufacturing

  11. Raman scattering diagnostics of YBa2Cu3Ox high temperature superconducting films

    International Nuclear Information System (INIS)

    Bagratashvili, V.N.; Burimov, V.N.; Denisov, V.N.

    1988-01-01

    Superconducting YBa 2 Cu 3 O x films produced by laser spraying of ceramic material are investigated by light Raman scattering (LCS). It is shown that using LCS it is possible to obtain data on phase composition and prevailing film orientation and to find optical conditions for their synthesis. The LCS method feature consists in a possibility of non-destructive remote control and high space resolution (several microns). Experimental results have shown that the best parameters (the highest T c and the narrowest Δ T c interval) are typical of films with prevailing orientation of 0 xy crystallite plane parallel to the surface

  12. Growth of high Tc Bi-Sr-Ca-Cu-O thick films

    International Nuclear Information System (INIS)

    Chaudhry, Sangeeta; Khare, Neeraj; Gupta, A.K.; Nagpal, K.C.; Ojha, V.N.; Reddy, G.S.N.; Tomar, V.S.

    1991-01-01

    Thick films of Bi-Sr-Ca-Cu-O were deposited on (100) MgO substrates by screen-printing technique with the starting composition 1112. To attain the superconducting state, the films were subjected to two-step heat-treatment. R-T and XRD have been studied for films annealed at different durations of the second step. Initially T c (R=O) increased from 77 to 103 K as the annealing duration was increased after which T c decreased. Kinetics of the growth of high T c phase is discussed in the light of results. (author). 7 refs., 2 figs., 1 tab

  13. High transmittance optical films based on quantum dot doped nanoscale polymer dispersed liquid crystals

    Science.gov (United States)

    Gandhi, Sahil Sandesh; Chien, Liang-Chy

    2016-04-01

    We propose a simple way to fabricate highly transparent nanoscale polymer dispersed liquid crystal (nano-PDLC) films between glass substrates and investigate their incident angle dependent optical transmittance properties with both collimated and Lambertian intensity distribution light sources. We also demonstrate that doping nano-PDLC films with 0.1% InP/ZnS core/shell quantum dots (QD) results in a higher optical transmittance. This work lays the foundation for such nanostructured composites to potentially serve as roll-to-roll coatable light extraction or brightness enhancement films in emissive display applications, superior to complex nanocorrugation techniques proposed in the past.

  14. Highly -oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Reinig, P.; Selle, B.; Fenske, F.; Fuhs, W.; Alex, V.; Birkholz, M.

    2002-01-01

    Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 deg. C at high deposition rate (>100 nm/min) by pulsed dc magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency. The quantitative evaluation reveals that over 90% of the grains are oriented. The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film

  15. Defects in CdSe thin films, induced by high energy electron irradiation

    International Nuclear Information System (INIS)

    Ion, L.; Antohe, S.; Tutuc, D.; Antohe, V.A.; Tazlaoanu, C.

    2004-01-01

    Defects induced in CdSe thin films by high energy electron irradiation are investigated by means of thermally stimulated currents (TSC) spectroscopy. Films were obtained by vacuum deposition from a single source and irradiated with a 5 x 10 13 electrons/cm 2 s -1 beam of 6-MeV energy. It was found that electrical properties of the films are controlled by a deep donor state, located at 0.38 eV below the bottom edge of the conduction band. Parameters of the traps responsible for the recorded TSC peaks were determined. (authors)

  16. Magnetic properties changes of MnAs thin films irradiated with highly charged ions

    OpenAIRE

    Trassinelli , Martino; Gafton , V.; Eddrief , Mahmoud; Etgens , Victor H.; Hidki , S.; Lacaze , Emmanuelle; Lamour , Emily; Luo , X.; Marangolo , Massimiliano; Merot , Jacques; Prigent , Christophe; Reuschl , Regina; Rozet , Jean-Pierre; Steydli , S.; Vernhet , Dominique

    2013-01-01

    International audience; We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150~nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\\times10^{12}$ to $1.6\\times10^{15}$~ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Prelim...

  17. Mismatch and noise in modern IC processes

    CERN Document Server

    Marshall, Andrew

    2009-01-01

    Component variability, mismatch, and various noise effects are major contributors to design limitations in most modern IC processes. Mismatch and Noise in Modern IC Processes examines these related effects and how they affect the building block circuits of modern integrated circuits, from the perspective of a circuit designer.Variability usually refers to a large scale variation that can occur on a wafer to wafer and lot to lot basis, and over long distances on a wafer. This phenomenon is well understood and the effects of variability are included in most integrated circuit design with the use

  18. Design Developing of IC- Model Using VHDL

    International Nuclear Information System (INIS)

    Inzar-Anas

    2005-01-01

    In present, the electronic design required to become simple, small and flexible. The physical dimension of IC and number of pin can be significantly reduced while the flexibility and compatibility of IC was not change. Implementation of VHDL(VHSIC Hardware Description Language) seem as a great progress in the design of digital circuit. By using this language designing of model can be more simple, flexible and efficient. This paper was purposed to introduce VHDL and its features. Sample in modeling to illustrate the advantage of VHDL will also be described. (author)

  19. Preliminary I&C Design for LORELEI

    International Nuclear Information System (INIS)

    Korotkin, S.; Kaufman, Y.; Guttmann, E. B.; Levy, S.; Amidan, D.; Gdalyho, B.; Cahana, T.; Ellenbogen, A.; Arad, M.; Weiss, Y.; Sasson, A.; Ferry, L.; Bourrelly, F.; Cohen, Y.

    2014-01-01

    This document summarizes the preliminary I&C design for LORELEI experiment The preliminary design deals with considerations regarding appropriate safety and service instrumentation. The determined closed loop control rules for temperature and position will be implemented in the detailed design. The Computer Aided Operator Decisions System (CAODS) will be used for prediction of hot spot temperature and thickness of oxidation layer using Baker-Just correlation. The proposed hybrid simulation system comprising of both virtual and real hardware will be in-cooperated for LORELEI verification. It will perform both integration cold tests for a partial hardware loop and virtual tests for the final I&C design

  20. Microstructure and hardness evolution of nanochannel W films irradiated by helium at high temperature

    Science.gov (United States)

    Qin, Wenjing; Wang, Yongqiang; Tang, Ming; Ren, Feng; Fu, Qiang; Cai, Guangxu; Dong, Lan; Hu, Lulu; Wei, Guo; Jiang, Changzhong

    2018-04-01

    Plasma facing materials (PFMs) face one of the most serious challenges in fusion reactors, including unprecedented harsh environment such as 14.1 MeV neutron and transmutation gas irradiation at high temperature. Tungsten (W) is considered to be one of the most promising PFM, however, virtually insolubility of helium (He) in W causes new material issues such as He bubbles and W "fuzz" microstructure. In our previous studies, we presented a new strategy using nanochannel structure designed in the W film to increase the releasing of He atoms and thus to minimize the He nucleation and "fuzz" formation behavior. In this work, we report the further study on the diffusion of He atoms in the nanochannel W films irradiated at a high temperature of 600 °C. More specifically, the temperature influences on the formation and growth of He bubbles, the lattice swelling, and the mechanical properties of the nanochannel W films were investigated. Compared with the bulk W, the nanochannel W films possessed smaller bubble size and lower bubble areal density, indicating that noticeable amounts of He atoms have been released out along the nanochannels during the high temperature irradiations. Thus, with lower He concentration in the nanochannel W films, the formation of the bubble superlattice is delayed, which suppresses the lattice swelling and reduces hardening. These aspects indicate the nanochannel W films have better radiation resistance even at high temperature irradiations.

  1. K/sub Ic/ and J/sub Ic/ of Westerly granite: effects of thickness and in-plane dimensions

    International Nuclear Information System (INIS)

    Schmidt, R.A.; Lutz, T.J.

    1978-01-01

    An investigation is described in which tensile properties, fracture toughness, and critical J integral are measured for Westerly granite, a rock that is widely used in rock mechanics studies. This was primarily a parameter sensitivity study in which the effects of specimen dimensions and testing techniques were assessed. It is hoped that this study will aid in establishing tentative standards and guidelines for fracture toughness testing of rock as well as indicate the feasibility of using a J integral fracture criterion for this material. ASTM standard specimen configurations of the compact and bend types were tested with compact specimens ranging in width from W = 25.4 mm to W = 406.4 mm (0.5T to 8T) and with thickness ranging from 13 mm to 100 mm. A series of 4T compact specimens were tested to assess the effects of thickness and fatigue precracking. Techniques are described that enable several values of K/sub Ic/, a complete J vs crack growth curve, and a J/sub Ic/ value to be obtained from each sample. Direct-pull tension tests on shaped specimens of Westerly granite are described which indicate a high degree of nonlinear, inelastic behavior. This fact raises questions about the use of LEFM, but the J/sub Ic/ data presented appear to validate the K/sub Ic/ measurements

  2. Photographic film dosimetry for high-energy accelerator radiation

    International Nuclear Information System (INIS)

    Komochkov, M.M.; Salatskaya, M.I.

    1981-01-01

    A technique for personnel photographic film dosimetry (PPFDN) of wide energy spectrum neutrons intended for measuring the effect of accelerating device radiation on personnel is described. Procedures of data measurement and processing as well as corrections to hadron contribution are presented. It is noted that the PPFDN method permits to measure a neutron dose equivalent for personnel in the range from 0.01 to 0.02 up to 100 rem, if the relativistic neutron contribution to a total dose does not exceed 5%. The upper limit of the measured dose reduced several times for a greater contribution of relativistic neutrons to the total dose [ru

  3. Efficient analysis for nonlinear microwave characteristics of high-power HTS thin film microstrip resonators

    International Nuclear Information System (INIS)

    Kedar, Ashutosh; Kataria, N D

    2005-01-01

    This paper investigates the nonlinear effects of high-T c superconducting (HTS) thin film in high-power applications. A nonlinear model for complex surface impedance has been proposed for the efficient analysis of the nonlinearity of HTS thin films. Further, using the developed model, analysis of HTS-MSR has been done using the spectral domain method (SDM). The SDM formulation has been modified to account for finite conductivity and thickness of HTS films by incorporating a complex resistive boundary condition. The results have been validated with the experiments performed with microstrip resonators (MSRs) based on YBa 2 Cu 3 O 7-x (YBCO) thin films made by a laser ablation technique on LaAlO 3 substrates, characterized for their characteristics, namely, resonant frequency and quality factor measured as a function of temperature and input RF power. A close agreement between the theoretical and measured results has been achieved validating the analysis

  4. Degradation testing and failure analysis of DC film capacitors under high humidity conditions

    DEFF Research Database (Denmark)

    Wang, Huai; Nielsen, Dennis Achton; Blaabjerg, Frede

    2015-01-01

    Metallized polypropylene film capacitors are widely used for high-voltage DC-link applications in power electronic converters. They generally have better reliability performance compared to aluminum electrolytic capacitors under electro-thermal stresses within specifications. However......, the degradation of the film capacitors is a concern in applications exposed to high humidity environments. This paper investigates the degradation of a type of plastic-boxed metallized DC film capacitors under different humidity conditions based on a total of 8700 h of accelerated testing and also post failure...... of interest is also presented. The study enables a better understanding of the humidity-related failure mechanisms and reliability performance of DC film capacitors for power electronics applications....

  5. Highly conductive and flexible color filter electrode using multilayer film structure

    Science.gov (United States)

    Han, Jun Hee; Kim, Dong-Young; Kim, Dohong; Choi, Kyung Cheol

    2016-07-01

    In this paper, a high performance flexible component that serves as a color filter and an electrode simultaneously is suggested. The suggested highly conductive and flexible color filter electrode (CFE) has a multilayer film structure composed of silver (Ag) and tungsten trioxide (WO3). The CFE maintained its color filtering capability even when the films were bent on a polyethylene terephthalate (PET) film. Low sheet resistance of the CFE was obtained using WO3 as a bridge layer that connects two Ag layers electrically. The sheet resistance was less than 2 Ω/sq. and it was negligibly changed after bending the film, confirming the flexibility of the CFE. The CFE can be easily fabricated using a thermal evaporator and is easily patterned by photolithography or a shadow mask. The proposed CFE has enormous potential for applications involving optical devices including large area devices and flexible devices.

  6. High-coercivity FePt nanoparticle assemblies embedded in silica thin films

    International Nuclear Information System (INIS)

    Yan, Q; Purkayastha, A; Singh, A P; Li, H; Ramanath, G; Li, A; Ramanujan, R V

    2009-01-01

    The ability to process assemblies using thin film techniques in a scalable fashion would be a key to transmuting the assemblies into manufacturable devices. Here, we embed FePt nanoparticle assemblies into a silica thin film by sol-gel processing. Annealing the thin film composite at 650 deg. C transforms the chemically disordered fcc FePt phase into the fct phase, yielding magnetic coercivity values H c >630 mT. The positional order of the particles is retained due to the protection offered by the silica host. Such films with assemblies of high-coercivity magnetic particles are attractive for realizing new types of ultra-high-density data storage devices and magneto-composites.

  7. Highly efficient transparent Zn2SiO4:Mn2+ phosphor film on quartz glass

    International Nuclear Information System (INIS)

    Seo, K.I.; Park, J.H.; Kim, J.S.; Kim, G.C.; Yoo, J.H.

    2009-01-01

    Highly efficient transparent Zn 2 SiO 4 :Mn 2+ film phosphors on quartz substrates were deposited by the thermal diffusion of sputtered ZnO:Mn film. They show a textured structure with some preferred orientations. Our film phosphor shows, for the best photoluminescence (PL) brightness, a green PL brightness of about 20% of a commercial Zn 2 SiO 4 :Mn 2+ powder phosphor screen. The film shows a high transmittance of more than 10% at the red-color region. The excellence in PL brightness and transmittance can be explained in terms of the textured crystal growth with a continuous gradient of Zn 2 SiO 4 : Mn 2+ crystals.

  8. Abundances of Planetary Nebulae IC 418, IC 2165 and NGC 5882

    NARCIS (Netherlands)

    Pottasch, [No Value; Bernard-Salas, J; Beintema, DA; Feibelman, WA

    The ISO and IUE spectra of the elliptical nebulae NGC 5882, IC 418 and IC 2165 are presented. These spectra are combined with the spectra in the visual wavelength region to obtain a complete, extinction corrected, spectrum. The chemical composition of the nebulae is then calculated and compared to

  9. Gafchromic EBT-XD film: Dosimetry characterization in high-dose, volumetric-modulated arc therapy.

    Science.gov (United States)

    Miura, Hideharu; Ozawa, Shuichi; Hosono, Fumika; Sumida, Naoki; Okazue, Toshiya; Yamada, Kiyoshi; Nagata, Yasushi

    2016-11-08

    Radiochromic films are important tools for assessing complex dose distributions. Gafchromic EBT-XD films have been designed for optimal performance in the 40-4,000 cGy dose range. We investigated the dosimetric characteristics of these films, including their dose-response, postexposure density growth, and dependence on scanner orientation, beam energy, and dose rate with applications to high-dose volumetric-modulated arc therapy (VMAT) verification. A 10 MV beam from a TrueBeam STx linear accelerator was used to irradiate the films with doses in the 0-4,000 cGy range. Postexposure coloration was analyzed at postirradiation times ranging from several minutes to 48 h. The films were also irradiated with 6 MV (dose rate (DR): 600 MU/min), 6 MV flattening filter-free (FFF) (DR: 1,400 MU/ min), and 10 MV FFF (DR: 2,400 MU/min) beams to determine the energy and dose-rate dependence. For clinical examinations, we compared the dose distribu-tion measured with EBT-XD films and calculated by the planning system for four VMAT cases. The red channel of the EBT-XD film exhibited a wider dynamic range than the green and blue channels. Scanner orientation yielded a variation of ~ 3% in the net optical density (OD). The difference between the film front and back scan orientations was negligible, with variation of ~ 1.3% in the net OD. The net OD increased sharply within the first 6 hrs after irradiation and gradually afterwards. No significant difference was observed for the beam energy and dose rate, with a variation of ~ 1.5% in the net OD. The gamma passing rates (at 3%, 3 mm) between the film- measured and treatment planning system (TPS)-calculated dose distributions under a high dose VMAT plan in the absolute dose mode were more than 98.9%. © 2016 The Authors.

  10. High-negative effective refractive index of silver nanoparticles system in nanocomposite films

    Science.gov (United States)

    Altunin, Konstantin K.; Gadomsky, Oleg N.

    2012-03-01

    We have proved on the basis of the experimental optical reflection and transmission spectra of the nanocomposite film of poly(methyl methacrylate) with silver nanoparticles that (PMMA + Ag) nanocomposite films have quasi-zero refractive indices in the optical wavelength range. We show that to achieve quasi-zero values of the complex index of refraction of composite materials is necessary to achieve high-negative effective refractive index in the system of spherical silver nanoparticles.

  11. Application of high-resolution film for lithography to synchrotron X-ray topography

    International Nuclear Information System (INIS)

    Mizuno, Kaoru; Ito, Kazuyoshi; Iwami, Masayuki; Hashimoto, Eiji; Kino, Takao.

    1994-01-01

    A high-resolution film for lithography is applied to a detector for synchrotron radiation topography, instead of a nuclear plate. The film shows much better resolution than that of the plate although exposure time an about 500 times longer is required. The size distribution of interstitial loops grown as vacancy sources in a nearly perfect aluminum crystal after a temperature rise is examined from the while beam topograph. (author)

  12. Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors

    Science.gov (United States)

    2011-12-01

    band gap of highly textured PZT thin films. The deposition process variables were - argon and oxygen flows, chamber pressure, RF power (DC Bias...needed another parameter to equate with the number of unknowns in the resultant model equations. From Figure 24, electronic polarizability affects the... Polarizability and Optical dielectric response of a thin.film , ., ,__~--~---\\- 000 01’ "󈧶 Ots Tncnt.re"’°l Effective Polarizability = Reddy

  13. Study of the Radiochromic Film for High Dose Measurement in Radiation Processing

    Directory of Open Access Journals (Sweden)

    CHEN Yi-zhen

    2016-02-01

    Full Text Available To establish the radiochromic film dosimeter for high dose level measurement during radiation processing, By corresponding formula and its preparation process research, batches of radiochromic film dosimeters were prepared using nylon as substrate and pararosaniline cyanide as dye. In Co-60 gamma reference radiation field, dosimetry response performance of radiochromic film was studied and results showed that the repeatability was good to 1.0%. The response curves demonstrated good linearity in the dose range of 5-210 kGy, and the signal of radiochromic film dosimeters after irradiation under the condition of low temperature storage within 2 weeks was stable. In addition, the radiochromic film dosimeters were not found to have noticeable dose rate dependence in the range of this experiment. In the linear dose range, radiochromic film dosimeter measures the absorbed dose, with extended uncertainty 4.2% (k=2 for Co-60 gamma rays. The film was suitable as dosimeters for the parameters measurement of the electron beam on the accelerator.

  14. Highly Magneto-Responsive Elastomeric Films Created by a Two-Step Fabrication Process

    KAUST Repository

    Marchi, Sophie

    2015-08-24

    An innovative method for the preparation of elastomeric magnetic films with increased magneto-responsivity is presented. Polymeric films containing aligned magnetic microchains throughout their thickness are formed upon the magnetophoretic transport and assembly of microparticles during polymer curing. The obtained films are subsequently magnetized at a high magnetic field of 3 T directed parallel to the orientation of the microchains. We prove that the combination of both alignment of the particles along a favorable direction during curing and the subsequent magnetization of the solid films induces an impressive increase of the films’ deflection. Specifically, the displacements reach few millimeters, up to 85 times higher than those of the nontreated films with the same particle concentration. Such a process can improve the performance of the magnetic films without increasing the amount of magnetic fillers and, thus, without compromising the mechanical properties of the resulting composites. The proposed method can be used for the fabrication of magnetic films suitable as components in systems in which large displacements at relatively low magnetic fields are required, such as sensors and drug delivery or microfluidic systems, especially where remote control of valves is requested to achieve appropriate flow and mixing of liquids.

  15. Highly Magneto-Responsive Elastomeric Films Created by a Two-Step Fabrication Process

    KAUST Repository

    Marchi, Sophie; Casu, Alberto; Bertora, Franco; Athanassiou, Athanassia; Fragouli, Despina

    2015-01-01

    An innovative method for the preparation of elastomeric magnetic films with increased magneto-responsivity is presented. Polymeric films containing aligned magnetic microchains throughout their thickness are formed upon the magnetophoretic transport and assembly of microparticles during polymer curing. The obtained films are subsequently magnetized at a high magnetic field of 3 T directed parallel to the orientation of the microchains. We prove that the combination of both alignment of the particles along a favorable direction during curing and the subsequent magnetization of the solid films induces an impressive increase of the films’ deflection. Specifically, the displacements reach few millimeters, up to 85 times higher than those of the nontreated films with the same particle concentration. Such a process can improve the performance of the magnetic films without increasing the amount of magnetic fillers and, thus, without compromising the mechanical properties of the resulting composites. The proposed method can be used for the fabrication of magnetic films suitable as components in systems in which large displacements at relatively low magnetic fields are required, such as sensors and drug delivery or microfluidic systems, especially where remote control of valves is requested to achieve appropriate flow and mixing of liquids.

  16. Ambipolar SnOx thin-film transistors achieved at high sputtering power

    Science.gov (United States)

    Li, Yunpeng; Yang, Jia; Qu, Yunxiu; Zhang, Jiawei; Zhou, Li; Yang, Zaixing; Lin, Zhaojun; Wang, Qingpu; Song, Aimin; Xin, Qian

    2018-04-01

    SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOx TFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 °C in ambient air. X-ray-diffraction patterns showed polycrystallisation of SnO and Sn in the annealed SnOx films. Scanning-electron-microscopy images revealed that microgrooves appeared after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggest that they were most likely Sn clusters. Atomic force microscopy images indicate an abrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has generally been thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film to enhance the stoichiometric balance.

  17. High-contrast resolution of film-screen systems in oral and maxillofacial radiology

    International Nuclear Information System (INIS)

    Kaeppler, G.; Reinert, S.

    2007-01-01

    Purpose: The aim was to determine differences in high-contrast resolution of film-screen systems used in dental panoramic and cephalometric radiography by calculating the modulation transfer function (MTF). The radiographs used to determine the MTF should be taken by the same X-ray units as those used for patient radiographs. Materials and methods: The MTF was determined using a lead grid and according to DIN 6867 - 2 for 11 film-screen systems (speed 250, speed class 200 and 400) used in dental radiographic diagnostics. The optical density was measured using a microdensitometer developed by PTB. Results: With 10% of the modulation transfer factor, newly developed film-screen systems (speed class 200 and 400) demonstrated a resolution of 4.9 to 6 line pairs per mm (panoramic radiography). In cephalometric radiography a film-screen system (speed class 400 and green-sensitive film) had a resolution of 4.2 line pairs per mm and surpassed two film-screen systems (speed class 400, resolution of 3 line pairs per mm, blue-sensitive films). (orig.)

  18. The origin of local strain in highly epitaxial oxide thin films.

    Science.gov (United States)

    Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

    2013-10-31

    The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

  19. Native oxidation of ultra high purity Cu bulk and thin films

    International Nuclear Information System (INIS)

    Iijima, J.; Lim, J.-W.; Hong, S.-H.; Suzuki, S.; Mimura, K.; Isshiki, M.

    2006-01-01

    The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of -50 V (IBD Cu film at V s = -50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V s = 0 V) showed lower oxidation resistance. The growth of Cu 2 O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V s = 0 and -50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu 2 O layer after a critical time

  20. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  1. Deposition of thin films and surface modification by pulsed high energy density plasma

    International Nuclear Information System (INIS)

    Yan Pengxun; Yang Size

    2002-01-01

    The use of pulsed high energy density plasma is a new low temperature plasma technology for material surface treatment and thin film deposition. The authors present detailed theoretical and experimental studies of the production mechanism and physical properties of the pulsed plasma. The basic physics of the pulsed plasma-material interaction has been investigated. Diagnostic measurements show that the pulsed plasma has a high electron temperature of 10-100 eV, density of 10 14 -10 16 cm -3 , translation velocity of ∼10 -7 cm/s and power density of ∼10 4 W/cm 2 . Its use in material surface treatment combines the effects of laser surface treatment, electron beam treatment, shock wave bombardment, ion implantation, sputtering deposition and chemical vapor deposition. The metastable phase and other kinds of compounds can be produced on low temperature substrates. For thin film deposition, a high deposition ratio and strong film to substrate adhesion can be achieved. The thin film deposition and material surface modification by the pulsed plasma and related physical mechanism have been investigated. Thin film c-BN, Ti(CN), TiN, DLC and AlN materials have been produced successfully on various substrates at room temperature. A wide interface layer exists between film and substrate, resulting in strong adhesion. Metal surface properties can be improved greatly by using this kind of treatment

  2. Precisely Controlled Ultrathin Conjugated Polymer Films for Large Area Transparent Transistors and Highly Sensitive Chemical Sensors.

    Science.gov (United States)

    Khim, Dongyoon; Ryu, Gi-Seong; Park, Won-Tae; Kim, Hyunchul; Lee, Myungwon; Noh, Yong-Young

    2016-04-13

    A uniform ultrathin polymer film is deposited over a large area with molecularlevel precision by the simple wire-wound bar-coating method. The bar-coated ultrathin films not only exhibit high transparency of up to 90% in the visible wavelength range but also high charge carrier mobility with a high degree of percolation through the uniformly covered polymer nanofibrils. They are capable of realizing highly sensitive multigas sensors and represent the first successful report of ethylene detection using a sensor based on organic field-effect transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    Energy Technology Data Exchange (ETDEWEB)

    Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden)

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  4. Liquid phase deposition of WO3/TiO2 heterojunction films with high photoelectrocatalytic activity under visible light irradiation

    International Nuclear Information System (INIS)

    Zhang, Man; Yang, Changzhu; Pu, Wenhong; Tan, Yuanbin; Yang, Kun; Zhang, Jingdong

    2014-01-01

    Highlights: • Liquid phase deposition is developed for preparing WO 3 /TiO 2 heterojunction films. • TiO 2 film provides an excellent platform for WO 3 deposition. • WO 3 expands the absorption band edge of TiO 2 film to visible light region. • WO 3 /TiO 2 heterojunction film shows high photoelectrocatalytic activity. - ABSTRACT: The heterojunction films of WO 3 /TiO 2 were prepared by liquid phase deposition (LPD) method via two-step processes. The scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopic analysis indicated that flower-like WO 3 film was successfully deposited on TiO 2 film with the LPD processes. The TiO 2 film provided an excellent platform for WO 3 deposition while WO 3 obviously expanded the absorption of TiO 2 film to visible light. As the result, the heterojunction film of WO 3 /TiO 2 exhibited higher photocurrent response to visible light illumination than pure TiO 2 or WO 3 film. The photoelectrocatalytic (PEC) activity of WO 3 /TiO 2 film was evaluated by degrading Rhodamin B (RhB) and 4-chlorophenol (4-CP) under visible light irradiation. The results showed that the LPD WO 3 /TiO 2 film possessed high PEC activity for efficient removal of various refractory organic pollutants

  5. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  6. Fluence behavior of polyethylene films irradiated with high energy electrons

    International Nuclear Information System (INIS)

    Pino, Eddy Segura; Silva, Leonardo G. Andrade e

    1999-01-01

    Polymers are viscoelastic materials at all temperatures, so that mechanical loads induce time dependable deformations. The recovery of these deformations, on load release, take some time and it is not always recovered completely. The main objective of this work was to analyse the creep behavior of electron irradiated polyethylene films. From the experimental results, it was sated that polyethylene creeps less with an increase on irradiation dose and also that creep recovery in this material increases with doses but it is not complete. This behavior can be attributed to the crosslinking effect witch stabilize elements of the molecular structure of the polyethylene, thus reducing their mobility and so inhibiting the creep mechanism. The partial creep recovery could be also attributed to the reticulation effect and to the polyethylene plastic behavior. Additional information on the creep behavior was obtained by fitting the experimental data with exponential functions and evaluating the mathematical parameters with a modified Kelvin-Voigt mechanical model. (author)

  7. Kosterlitz-Thouless transition in high-Tc superconductor films

    International Nuclear Information System (INIS)

    Davis, L.C.; Beasley, M.R.; Scalapino, D.J.

    1990-01-01

    Dynamical theory for the polarization of bound vortex-antivortex pairs near the Kosterlitz-Thouless transition (T KT =88.4 K) has been applied to thin films of YBa 2 Cu 3 O 7 . Calculations show that the correct order of magnitude is predicted for the loss function ωG/c 2 at T KT , but the temperature dependence below the transition is wrong. The theoretical value drops much more rapidly with decreasing temperature than observed experimentally. Similar disagreement is found for the penetration depth λ(T). Estimates of the loss function at microwave frequencies show rather large effects near the critical temperature, but these become negligible by 80 K. The performance of microwave devices operating at liquid-N 2 temperature should not be degraded by vortex-antivortex pairs

  8. Ferrite Nanoparticles, Films, Single Crystals, and Metamaterials: High Frequency Applications

    International Nuclear Information System (INIS)

    Harris, V.

    2006-01-01

    Ferrite materials have long played an important role in power conditioning, conversion, and generation across a wide spectrum of frequencies (up to ten decades). They remain the preferred magnetic materials, having suitably low losses, for most applications above 1 MHz, and are the only viable materials for nonreciprocal magnetic microwave and millimeter-wave devices (including tunable filters, isolators, phase shifters, and circulators). Recently, novel processing techniques have led to a resurgence of research interest in the design and processing of ferrite materials as nanoparticles, films, single crystals, and metamaterials. These latest developments have set the stage for their use in emerging technologies that include cancer remediation therapies such as magnetohyperthermia, magnetic targeted drug delivery, and magneto-rheological fluids, as well as enhanced magnetic resonance imaging. With reduced dimensionality of nanoparticles and films, and the inherent nonequilibrium nature of many processing schemes, changes in local chemistry and structure have profound effects on the functional properties and performance of ferrites. In this lecture, we will explore these effects upon the fundamental magnetic and electronic properties of ferrites. Density functional theory will be applied to predict the properties of these ferrites, with synchrotron radiation techniques used to elucidate the chemical and structural short-range order. This approach will be extended to study the atomic design of ferrites by alternating target laser-ablation deposition. Recently, this approach has been shown to produce ferrites that offer attractive properties not found in conventionally grown ferrites. We will explore the latest research developments involving ferrites as related to microwave and millimeter-wave applications and the attempt to integrate these materials with semiconductor materials platforms

  9. Enhanced high temperature thermoelectric response of sulphuric acid treated conducting polymer thin films

    KAUST Repository

    Sarath Kumar, S. R.; Kurra, Narendra; Alshareef, Husam N.

    2015-01-01

    We report the high temperature thermoelectric properties of solution processed pristine and sulphuric acid treated poly(3, 4-ethylenedioxythiophene):poly(4-styrenesulfonate) (or PEDOT:PSS) films. The acid treatment is shown to simultaneously enhance the electrical conductivity and Seebeck coefficient of the metal-like films, resulting in a five-fold increase in thermoelectric power factor (0.052 W/m. K ) at 460 K, compared to the pristine film. By using atomic force micrographs, Raman and impedance spectra and using a series heterogeneous model for electrical conductivity, we demonstrate that acid treatment results in the removal of PSS from the films, leading to the quenching of accumulated charge-induced energy barriers that prevent hopping conduction. The continuous removal of PSS with duration of acid treatment also alters the local band structure of PEDOT:PSS, resulting in simultaneous enhancement in Seebeck coefficient.

  10. Microscale interfacial behavior at vapor film collapse on high-temperature particle surface

    International Nuclear Information System (INIS)

    Abe, Yutaka; Tochio, Daisuke

    2009-01-01

    It has been pointed out that vapor film on a premixed high-temperature droplet surface should be collapsed to trigger vapor explosion. Thus, it is important to clarify the micromechanism of vapor film collapse behavior for the occurrence of vapor explosion. In the present study, microscale vapor-liquid interface behavior upon vapor film collapse caused by an external pressure pulse is experimentally observed and qualitatively analyzed. In the analytical investigation, interfacial temperature and interface movement were estimated with heat conduction analysis and visual data processing technique. Results show that condensation can possibly occur at the vapor-liquid interface when the pressure pulse arrived. That is, this result indicates that the vapor film collapse behavior is dominated not by fluid motion but by phase change. (author)

  11. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  12. Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

    Directory of Open Access Journals (Sweden)

    Ningyu Ren

    2017-05-01

    Full Text Available ITO/Ag/ITO (IAI trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmittance over 94.25% at the wavelength of 550 nm and an average transmittance over the visual region of 88.04% were achieved. The calculated value of figure of merit (FOM reaches 80.9 10-3 Ω-1 for IAI films with 15-nm-thick Ag interlayer. From the morphology and structural characterization, IAI films could show an excellent correlated electric and optical performance if Ag grains interconnect with each other on the bottom ITO layer. These results indicate that IAI trilayer films, which also exhibit low surface roughness, will be well used in optoelectronic devices.

  13. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  14. Large Eddy simulation of flat plate film cooling at high blowing ratio using open FOAM

    Science.gov (United States)

    Baagherzadeh Hushmandi, Narmin

    2018-06-01

    In this work, numerical analysis was performed to predict the behaviour of high Reynolds number turbulent cross-flows used in film cooling applications. The geometry included one row of three discrete coolant holes inclined at 30 degrees to the main flow. In the computational model, the width of the channel was cut into one sixth and symmetry boundaries were applied in the centreline of the coolant hole and along the line of symmetry between two adjacent holes. One of the main factors that affect the performance of film cooling is the blowing ratio of coolant to the main flow. A blowing ratio equal to two was chosen in this study. Analysis showed that the common practice CFD models that employ RANS equations together with turbulence modelling under predict the film cooling effectiveness up to a factor of four. However, LES method showed better agreement of film cooling effectiveness both in tendency and absolute values compared with experimental results.

  15. Enhanced high temperature thermoelectric response of sulphuric acid treated conducting polymer thin films

    KAUST Repository

    Sarath Kumar, S. R.

    2015-11-24

    We report the high temperature thermoelectric properties of solution processed pristine and sulphuric acid treated poly(3, 4-ethylenedioxythiophene):poly(4-styrenesulfonate) (or PEDOT:PSS) films. The acid treatment is shown to simultaneously enhance the electrical conductivity and Seebeck coefficient of the metal-like films, resulting in a five-fold increase in thermoelectric power factor (0.052 W/m. K ) at 460 K, compared to the pristine film. By using atomic force micrographs, Raman and impedance spectra and using a series heterogeneous model for electrical conductivity, we demonstrate that acid treatment results in the removal of PSS from the films, leading to the quenching of accumulated charge-induced energy barriers that prevent hopping conduction. The continuous removal of PSS with duration of acid treatment also alters the local band structure of PEDOT:PSS, resulting in simultaneous enhancement in Seebeck coefficient.

  16. Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

    2016-08-01

    We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

  17. High-throughput film-densitometry: An efficient approach to generate large data sets

    Energy Technology Data Exchange (ETDEWEB)

    Typke, Dieter; Nordmeyer, Robert A.; Jones, Arthur; Lee, Juyoung; Avila-Sakar, Agustin; Downing, Kenneth H.; Glaeser, Robert M.

    2004-07-14

    A film-handling machine (robot) has been built which can, in conjunction with a commercially available film densitometer, exchange and digitize over 300 electron micrographs per day. Implementation of robotic film handling effectively eliminates the delay and tedium associated with digitizing images when data are initially recorded on photographic film. The modulation transfer function (MTF) of the commercially available densitometer is significantly worse than that of a high-end, scientific microdensitometer. Nevertheless, its signal-to-noise ratio (S/N) is quite excellent, allowing substantial restoration of the output to ''near-to-perfect'' performance. Due to the large area of the standard electron microscope film that can be digitized by the commercial densitometer (up to 10,000 x 13,680 pixels with an appropriately coded holder), automated film digitization offers a fast and inexpensive alternative to high-end CCD cameras as a means of acquiring large amounts of image data in electron microscopy.

  18. An experimental study of high heat flux removal by shear-driven liquid films

    Directory of Open Access Journals (Sweden)

    Zaitsev Dmitry

    2017-01-01

    Full Text Available Intensively evaporating liquid films, moving under the friction of a co-current gas flow in a mini-channel (shear-driven liquid films, are promising for the use in cooling systems of modern semiconductor devices with high local heat release. In this work, the effect of various parameters, such as the liquid and gas flow rates and channel height, on the critical heat flux in the locally heated shear-driven water film has been studied. A record value of the critical heat flux of 1200 W/cm2 has been achieved in experiments. Heat leaks to the substrate and heat losses to the atmosphere in total do not exceed 25% for the heat flux above 400 W/cm2. Comparison of the critical heat fluxes for the shear-driven liquid film and for flow boiling in a minichannel shows that the critical heat flux is an order of magnitude higher for the shear-driven liquid film. This confirms the prospect of using shear-driven liquid films in the modern high-efficient cooling systems.

  19. High-throughput measurement of polymer film thickness using optical dyes

    Science.gov (United States)

    Grunlan, Jaime C.; Mehrabi, Ali R.; Ly, Tien

    2005-01-01

    Optical dyes were added to polymer solutions in an effort to create a technique for high-throughput screening of dry polymer film thickness. Arrays of polystyrene films, cast from a toluene solution, containing methyl red or solvent green were used to demonstrate the feasibility of this technique. Measurements of the peak visible absorbance of each film were converted to thickness using the Beer-Lambert relationship. These absorbance-based thickness calculations agreed within 10% of thickness measured using a micrometer for polystyrene films that were 10-50 µm. At these thicknesses it is believed that the absorbance values are actually more accurate. At least for this solvent-based system, thickness was shown to be accurately measured in a high-throughput manner that could potentially be applied to other equivalent systems. Similar water-based films made with poly(sodium 4-styrenesulfonate) dyed with malachite green oxalate or congo red did not show the same level of agreement with the micrometer measurements. Extensive phase separation between polymer and dye resulted in inflated absorbance values and calculated thickness that was often more than 25% greater than that measured with the micrometer. Only at thicknesses below 15 µm could reasonable accuracy be achieved for the water-based films.

  20. A nanoporous MXene film enables flexible supercapacitors with high energy storage.

    Science.gov (United States)

    Fan, Zhimin; Wang, Youshan; Xie, Zhimin; Xu, Xueqing; Yuan, Yin; Cheng, Zhongjun; Liu, Yuyan

    2018-05-14

    MXene films are attractive for use in advanced supercapacitor electrodes on account of their ultrahigh density and pseudocapacitive charge storage mechanism in sulfuric acid. However, the self-restacking of MXene nanosheets severely affects their rate capability and mass loading. Herein, a free-standing and flexible modified nanoporous MXene film is fabricated by incorporating Fe(OH)3 nanoparticles with diameters of 3-5 nm into MXene films and then dissolving the Fe(OH)3 nanoparticles, followed by low calcination at 200 °C, resulting in highly interconnected nanopore channels that promote efficient ion transport without compromising ultrahigh density. As a result, the modified nanoporous MXene film presents an attractive volumetric capacitance (1142 F cm-3 at 0.5 A g-1) and good rate capability (828 F cm-3 at 20 A g-1). Furthermore, it still displays a high volumetric capacitance of 749 F cm-3 and good flexibility even at a high mass loading of 11.2 mg cm-2. Therefore, this flexible and free-standing nanoporous MXene film is a promising electrode material for flexible, portable and compact storage devices. This study provides an efficient material design for flexible energy storage devices possessing high volumetric capacitance and good rate capability even at a high mass loading.

  1. High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals.

    Science.gov (United States)

    Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J; Zhang, Yanliang

    2016-09-12

    Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm(2) with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.

  2. Highly flexible transparent thin film heaters based on silver nanowires and aluminum zinc oxides

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Hahn-Gil; Kim, Jin-Hoon; Song, Jun-Hyuk; Jeong, Unyong; Park, Jin-Woo, E-mail: jwpark09@yonsei.ac.kr

    2015-08-31

    In this work, we developed highly flexible transparent film heaters (f-TFHs) composed of Ag nanowire networks (AgNWs) and aluminum zinc oxide (AZO). Uniform AgNWs were roll-to-roll coated on polyethylene terephthalate (PET) substrates using the Mayer rod method, and AZO was sputter-deposited atop the AgNWs at room temperature. The sheet resistance (R{sub s}) and transparency (T{sub opt}) of the AZO-coated AgNWs changed only slightly compared with the uncoated AgNWs. AZO is thermally less conductive than the heat pipes, but increases the thermal efficiency of the heaters blocking the heat convection through the air. Based on Joule heating, a higher average film temperature (T{sub ave}) is attained at a fixed electric potential drop between electrodes (ϕ) as the R{sub s} of the film decreases. Our experimental results revealed that T{sub ave} of the hybrid f-TFH is higher than AgNWs when the ratio of the area coverage of AgNWs to AZO is over a certain value. When a ϕ as low as 3 V/cm was applied to 5 cm × 5 cm f-TFHs, the maximum temperature of the hybrid film was over 100 °C, which is greater than that of AgNWs by more than 30 °C. Furthermore, uniform heating throughout the surfaces is achieved in the hybrid films while heating begins in small areas where densities of the nanowires (NWs) are the highest in the bare network. The non-uniform heating decreases the lifetime of f-TFHs by forming hot spots. Cyclic bending test results indicated that the hybrid films were as flexible as the AgNWs, and the R{sub s} of the hybrid films changes only slightly until 5000 cycles. Combined with the high-throughput coating technology presented here, the hybrid films will provide a robust and scalable strategy for large-area f-TFHs with highly enhanced performance. - Highlights: • We developed highly efficient flexible thin film heaters based on Ag nanowires and AZO composites. • In the composite, AZO plays an important role as an insulation blanket to block heat loss to

  3. Structure and superconducting properties of Nb-Zr alloy films made by a high-rate sputtering

    International Nuclear Information System (INIS)

    Sekine, Hisashi; Inoue, Kiyoshi; Tachikawa, Kyoji

    1978-01-01

    Superconducting Nb-Zr alloy films have been prepared by a continuous high-rate sputtering on tantalum substrates. A deposition rate of 330 nm/min has been attained. The compositional profile in the Nb-Zr film is quite uniform and the film has nearly the same composition as that of the target. The films deposited in a pure argon atmosphere show a columnar structure grown perpendicular to the substrate. The grain size strongly depends on the substrate temperature. The phase transformations in the Nb-Zr film become more apparent and the structure becomes closer to the equilibrium state as the film is deposited in higher atmosphere pressures and/or at lower target voltages. The superconducting transition temperature T sub(c) of the films is about the same as that of bulk samples. The dependence of T sub(c) on the substrate temperature is explainable on the phase transformations in the film. Critical current density J sub(c) and its anisotropy is closely related to the grain structure of the film. Grain boundaries seem to act as the most predominant flux pinning centers in the films. Effects of oxygen in the sputtering atmosphere on the structure and superconducting properties of the Nb-Zr films have been also investigated. Oxygen significantly decreases the grain size of the film. Oxygen increases J sub(c) but decreases T sub(c) of the film. (auth.)

  4. Highly hydrophilic ultra-high molecular weight polyethylene powder and film prepared by radiation grafting of acrylic acid

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Honglong [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Xu, Lu; Li, Rong [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Pang, Lijuan [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Hu, Jiangtao; Wang, Mouhua [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Wu, Guozhong, E-mail: wuguozhong@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2016-09-30

    Highlights: • Hydrophilic UHMWPE powder and film were obtained by γ-ray pre-irradiation grafting of AA. • A low concentration of AA solution was used for surface modification of UHMWPE. • A small grafting yield of AA sufficiently improved hydrophilicity of UHMWPE powder and film. - Abstract: The surface properties of ultra-high molecular weight polyethylene (UHMWPE) are very important for its use in engineering or composites. In this work, hydrophilic UHMWPE powder and film were prepared by γ-ray pre-irradiation grafting of acrylic acid (AA) and further neutralization with sodium hydroxide solution. Variations in the chemical structure, grafting yield and hydrophilicity were investigated and compared. FT-IR and XPS analysis results showed that AA was successfully grafted onto UHMWPE powder and film; the powder was more suitable for the grafting reaction in 1 wt% AA solution than the film. Given a dose of 300 kGy, the grafting yield of AA was ∼5.7% for the powder but ∼0.8% for the film under identical conditions. Radiation grafting of a small amount of AA significantly improved the hydrophilicity of UHMWPE. The water contact angle of the UHMWPE-g-PAA powder with a grafting yield of AA at ∼5.7% decreased from 110.2° to 68.2°. Moreover, the grafting powder (UHMWPE-g-PAA) exhibited good dispersion ability in water.

  5. Amorphous intergranular films in silicon nitride ceramics quenched from high temperatures

    International Nuclear Information System (INIS)

    Cinibulk, M.K.; Kleebe, H.; Schneider, G.A.; Ruehle, M.

    1993-01-01

    High-temperature microstructure of an MgO-hot-pressed Si 3 N 4 and a Yb 2 O 3 + Al 2 O 3 -sintered/annealed Si 3 N 4 were obtained by quenching thin specimens from temperatures between 1,350 and 1,550 C. Quenching materials from 1,350 C produced no observable exchanges in the secondary phases at triple-grain junctions or along grain boundaries. Although quenching from temperatures of ∼1,450 C also showed no significant changes in the general microstructure or morphology of the Si 3 N 4 grains, the amorphous intergranular film thickness increased substantially from an initial ∼1 nm in the slowly cooled material to 1.5--9 nm in the quenched materials. The variability of film thickness in a given material suggests a nonequilibrium state. Specimens quenched from 1,550 C revealed once again thin (1-nm) intergranular films at all high-angle grain boundaries, indicating an equilibrium condition. The changes observed in intergranular-film thickness by high-resolution electron microscopy can be related to the eutectic temperature of the system and to diffusional and viscous processes occurring in the amorphous intergranular film during the high-temperature anneal prior to quenching

  6. Preparation of Ta(C)N films by pulsed high energy density plasma

    Energy Technology Data Exchange (ETDEWEB)

    Feng Wenran [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Chen Guangliang [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Zhang Yan [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Gu Weichao [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Zhang Guling [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Niu Erwu [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Liu Chizi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China); Yang Size [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing (China)

    2007-04-07

    The pulsed high energy density plasma (PHEDP) is generated in the working gas due to a high-voltage high-current discharge, within a coaxial gun. In PHEDP surface modification, discharge is applied for preparing the amorphous and nanostructured high-melting materials as thin films deposited on various substrates. In this investigation, Ta(C)N films were deposited using PHEDP on stainless steel. Pure tantalum and graphite were used as the inner and outer electrodes of the PHEDP coaxial gun, respectively. Nitrogen was used as the working gas and also one of the reactants. Preliminary study on the films prepared under different conditions shows that the formation of Ta(C)N is drastically voltage dependent. At lower gun voltage, no Ta(C)N was detected in the films; when the gun voltage reaches or exceeds 3.0 kV, Ta(C)N occurred. The films are composed of densely stacked nanocrystallines with diameter less than 30 nm, and some grains are within 10 nm in diameter.

  7. Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens

    International Nuclear Information System (INIS)

    Madaria, Anuj R; Kumar, Akshay; Zhou Chongwu

    2011-01-01

    The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σ DC /σ Op , for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, Φ TE . Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.

  8. Large scale, highly conductive and patterned transparent films of silver nanowires on arbitrary substrates and their application in touch screens.

    Science.gov (United States)

    Madaria, Anuj R; Kumar, Akshay; Zhou, Chongwu

    2011-06-17

    The application of silver nanowire films as transparent conductive electrodes has shown promising results recently. In this paper, we demonstrate the application of a simple spray coating technique to obtain large scale, highly uniform and conductive silver nanowire films on arbitrary substrates. We also integrated a polydimethylsiloxane (PDMS)-assisted contact transfer technique with spray coating, which allowed us to obtain large scale high quality patterned films of silver nanowires. The transparency and conductivity of the films was controlled by the volume of the dispersion used in spraying and the substrate area. We note that the optoelectrical property, σ(DC)/σ(Op), for various films fabricated was in the range 75-350, which is extremely high for transparent thin film compared to other candidate alternatives to doped metal oxide film. Using this method, we obtain silver nanowire films on a flexible polyethylene terephthalate (PET) substrate with a transparency of 85% and sheet resistance of 33 Ω/sq, which is comparable to that of tin-doped indium oxide (ITO) on flexible substrates. In-depth analysis of the film shows a high performance using another commonly used figure-of-merit, Φ(TE). Also, Ag nanowire film/PET shows good mechanical flexibility and the application of such a conductive silver nanowire film as an electrode in a touch panel has been demonstrated.

  9. To Enhance the Fire Resistance Performance of High-Speed Steel Roller Door with Water Film System

    Directory of Open Access Journals (Sweden)

    De-Hua Chung

    2015-01-01

    Full Text Available The structure of high-speed roller door with water film has improved in this study. The flameproof water film system is equipped with a water circulating device to reduce the water consumption of water film system. The water film is generated at the roller box of the high-speed roller door in this study. The heating test is done with the full-scale heating furnace. Both cases of the water film on unexposed surface and water film on exposed surface passed the fire resistance test based on ISO 834, proving that the high-speed roller door with water film system has 120A fire resistance period. The main findings indicate that the water film on exposed surface shows that as the amount of water film evaporated by high temperature inside the furnace must be greater than the evaporation capacity of water film on unexposed surface, the required water supply is 660 L more than the water film on unexposed surface.

  10. Putting evaporators to work: wiped film evaporator for high level wastes

    International Nuclear Information System (INIS)

    Dierks, R.D.; Bonner, W.F.

    1976-01-01

    At Battelle, Pacific Northwest Laboratories, a pilot scale, wiped film evaporator was tested for concentrating high level liquid wastes from Purex-type nuclear fuel recovery processes. The concentrates produced up to 60 wt-percent total solids; and the simplicity of operation and design of the evaporator gave promise for low maintenance and high reliability

  11. Preparation and Properties of Nano Dy/TiO2 Films Supported on High Silica Fiber

    Directory of Open Access Journals (Sweden)

    HUANG Feng-ping

    2017-07-01

    Full Text Available In order to improve the photocatalytic degradation performance and stability of nano TiO2, Dy doped TiO2 supported on high silica glass fiber was prepared by microwave-sol method combined with dip-coating method. The samples were analyzed by XRD,SEM,PL,EDS,XPS and other equipments for phase composition of films,surface topography, surface elements and the stability of films. And the effects of pretreatment solution and coating method on the high-silica fiber film were investigated.In addition, the photocatalytic performance of the sample has been investigated by degrading methylene blue. The results show that the catalytic stability of Dy doping TiO2 nanofilms supported on high silica glass fiber can be improved and the degradation of methyl orange can reach 94% in 30min after 5 times of coating treatment.

  12. Free-standing 3D graphene/polyaniline composite film electrodes for high-performance supercapacitors

    Science.gov (United States)

    Wang, Shiyong; Ma, Li; Gan, Mengyu; Fu, Shenna; Dai, Wenqin; Zhou, Tao; Sun, Xiaowu; Wang, Huihui; Wang, Huining

    2015-12-01

    The research paper describes polyaniline (PANI) nanowires array on flexible polystyrene microsphere/reduced graphene (PS/rGN) film is synthesized by dilute polymerization, and then the PS microspheres are removed to form free-standing three-dimensional (3D) rGN/PANI composite film. The chemical and structural properties of the 3D rGN/PANI film are characterized by scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Brunauer-Emmett-Teller (BET), and the results confirm the 3D rGN/PANI film is synthesized successfully. When the film is used as a supercapacitor electrode, the maximum specific capacitance is as high as 740 F g-1 (or 581 F cm-3 for volumetric capacitance) at a current density of 0.5 A g-1 and the specific capacitance retains 87% of the initial after constant charge-discharge 1000 cycles at current density of 10 A g-1. It is believed that the free-standing 3D rGN/PANI film will have a great potential for application in supercapacitors.

  13. Magnetic properties and high frequency characteristics of FeCoN thin films

    Directory of Open Access Journals (Sweden)

    Tae-Jong Hwang

    2016-05-01

    Full Text Available (Fe65Co35N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2. A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1∼2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

  14. High Performance Infrared Plasmonic Metamaterial Absorbers and Their Applications to Thin-film Sensing

    KAUST Repository

    Yue, Weisheng

    2016-04-07

    Plasmonic metamaterial absorbers (PMAs) have attracted considerable attention for developing various sensing devices. In this work, we design, fabricate and characterize PMAs of different geometrical shapes operating in mid-infrared frequencies, and explore the applications of the PMAs as sensor for thin films. The PMAs, consisting of metal-insulator-metal stacks with patterned gold nanostructured surfaces (resonators), demonstrated high absorption efficiency (87 to 98 %) of electromagnetic waves in the infrared regime. The position and efficiency of resonance absorption are dependent on the shape of the resonators. Furthermore, the resonance wavelength of PMAs was sensitive to the thin film coated on the surface of the PMAs, which was tested using aluminum oxide (Al2O3) as the film. With increase of the Al2O3 thickness, the position of resonance absorption shifted to longer wavelengths. The dependence of the resonant wavelength on thin film thickness makes PMAs a suitable candidate as a sensor for thin films. Using this sensing strategy, PMAs have potential as a new method for thin film detection and in situ monitoring of surface reactions. © 2016 Springer Science+Business Media New York

  15. Off Axis Growth of Strontium Titanate Films with High Dielectric Constant Tuning and Low Loss

    Science.gov (United States)

    Kampangkeaw, Satreerat

    2002-03-01

    Using off-axis pulsed laser deposition, we have grown strontium titanate (STO) films on neodymium gallate (NGO) and lanthanum aluminate (LAO) substrates. We measured the film dielectric constant and loss tangent as a function of temperature in the 10kHz to 1 MHz frequency range. We found that the loss is less than 0.01 We also obtained a figure of merit from the relative variation of the dielectric constant divided by the loss tangent. The obtained figured of merit at 35K and 1MHz is about 1000 comparable to bulk values. The dielectric constant of these films can be changed by a factor of 4-8 in the presence of a DC electric field up to 5V/μm. The films show significant variations of dielectric properties grown on different substrates at different locations respect to the axis of the plume. The STO films on LAO having high dielectric constant and dielectric tuning were grown in region near the center of the plume. On the other hand, STO on NGO shows this effect only on the films grown far from the plume axis.

  16. Microwave effective surface impedance of structures including a high-Tc superconducting film

    International Nuclear Information System (INIS)

    Hartemann, P.

    1992-01-01

    The microwave effective surface impedances of different stacks made of high-temperature superconducting films, dielectric materials and bulk normal metals were computed. The calculations were based on the two-fluid model of superconductors and the conventional transmission line theory. These effective impedances are compared to the calculated intrinsic surface impedances of the stacked superconducting films. The considered superconducting material has been the oxide YBa 2 Cu 3 O 7 epitaxially grown on crystalline substrates (MgO, LaAlO 3 , SrTiO 3 ), the film thickness ranging from a few nm to 1μm. Discrepancies between the effective surface resistances or reactances and the corresponding intrinsic values were determined at 10 GHz for non resonant or resonant structures. At resonance the surface resistance discrepancy exhibits a sharp peak which reaches 10 4 or more in relative value according to the geometry and the used materials. Obviously the effective surface reactance shows also huge variations about the resonance and may be negative. Moreover geometries allowing to obtain an effective resistance smaller than the film intrinsic value have been found. The effects of the resonance phenomenon on the electromagnetic wave reflectivity and reflection phase shift are investigated. Therefore the reported theoretical results demonstrate that the effective surface impedance of YBCO films with a thickness smaller than 500 nm can be very different from the intrinsic film impedance according to the structures. (Author). 3 refs., 10 figs., 2 tabs

  17. High Performance Infrared Plasmonic Metamaterial Absorbers and Their Applications to Thin-film Sensing

    KAUST Repository

    Yue, Weisheng; Wang, Zhihong; Yang, Yang; Han, Jiaguang; Li, Jingqi; Guo, Zaibing; Tan, Hua; Zhang, Xixiang

    2016-01-01

    Plasmonic metamaterial absorbers (PMAs) have attracted considerable attention for developing various sensing devices. In this work, we design, fabricate and characterize PMAs of different geometrical shapes operating in mid-infrared frequencies, and explore the applications of the PMAs as sensor for thin films. The PMAs, consisting of metal-insulator-metal stacks with patterned gold nanostructured surfaces (resonators), demonstrated high absorption efficiency (87 to 98 %) of electromagnetic waves in the infrared regime. The position and efficiency of resonance absorption are dependent on the shape of the resonators. Furthermore, the resonance wavelength of PMAs was sensitive to the thin film coated on the surface of the PMAs, which was tested using aluminum oxide (Al2O3) as the film. With increase of the Al2O3 thickness, the position of resonance absorption shifted to longer wavelengths. The dependence of the resonant wavelength on thin film thickness makes PMAs a suitable candidate as a sensor for thin films. Using this sensing strategy, PMAs have potential as a new method for thin film detection and in situ monitoring of surface reactions. © 2016 Springer Science+Business Media New York

  18. Immobilization of biomolecules on cysteamine-modified polyaniline film for highly sensitive biosensing.

    Science.gov (United States)

    Cai, Qi; Xu, Baojian; Ye, Lin; Di, Zengfeng; Zhang, Jishen; Jin, Qinghui; Zhao, Jianlong; Xue, Jian; Chen, Xianfeng

    2014-03-01

    We present a new cysteamine (CS)-modified polyaniline (PANI) film for highly efficient immobilization of biomolecules in biosensing technology. This electrochemical deposited PANI film treated with CS and glutaraldehyde could be employed as an excellent substrate for biomolecules immobilization. The parameters of PANI growth were optimized to obtain suitable surface morphology of films for biomolecules combination with the help of electron and atomic force microscopy. Cyclic voltammetry (CV) was utilized to illustrate the different electrochemical activities of each modified electrode. Due to the existence of sulfydryl group and amino group in CS, surface modification with CS was proven to reduce oxidized units on PANI film remarkably, as evidenced by both ATR-FTIR and Raman spectroscopy characterizations. Furthermore, bovine serum albumin (BSA) was used as the model protein to investigate the immobilization efficiency of biomolecules on the PANI film, comparative study using quartz crystal microbalance (QCM) showed that BSA immobilized on CS-modified PANI could be increased by at least 20% than that without CS-modified PANI in BSA solution with the concentration of 0.1-1mg/mL. The CS-modified PANI film would be significant for the immobilization and detection of biomolecules and especially promising in the application of immunosensor for ultrasensitive detection. © 2013 Published by Elsevier B.V.

  19. Simple and cost-effective fabrication of highly flexible, transparent superhydrophobic films with hierarchical surface design.

    Science.gov (United States)

    Kim, Tae-Hyun; Ha, Sung-Hun; Jang, Nam-Su; Kim, Jeonghyo; Kim, Ji Hoon; Park, Jong-Kweon; Lee, Deug-Woo; Lee, Jaebeom; Kim, Soo-Hyung; Kim, Jong-Man

    2015-03-11

    Optical transparency and mechanical flexibility are both of great importance for significantly expanding the applicability of superhydrophobic surfaces. Such features make it possible for functional surfaces to be applied to various glass-based products with different curvatures. In this work, we report on the simple and potentially cost-effective fabrication of highly flexible and transparent superhydrophobic films based on hierarchical surface design. The hierarchical surface morphology was easily fabricated by the simple transfer of a porous alumina membrane to the top surface of UV-imprinted polymeric micropillar arrays and subsequent chemical treatments. Through optimization of the hierarchical surface design, the resultant superhydrophobic films showed superior surface wetting properties (with a static contact angle of >170° and contact angle hysteresis of 82% at 550 nm wavelength). The superhydrophobic films were also experimentally found to be robust without significant degradation in the superhydrophobicity, even under repetitive bending and pressing for up to 2000 cycles. Finally, the practical usability of the proposed superhydorphobic films was clearly demonstrated by examining the antiwetting performance in real time while pouring water on the film and submerging the film in water.

  20. Visible luminescence from highly textured Tb{sup 3+} doped RF sputtered zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Sreedharan, R. Sreeja; Krishnan, R. Reshmi; Bose, R. Jolly; Kavitha, V.S.; Suresh, S. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Vinodkumar, R. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Department of Physics, University College, Thiruvananthapuram, Kerala (India); Sudheer, S.K. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Pillai, V.P. Mahadevan, E-mail: vpmpillai9@gmail.com [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India)

    2017-04-15

    Highly transparent, luminescent, c-axis oriented Tb{sup 3+} doped ZnO films are prepared by RF magnetron sputtering technique. The structural, morphological, optical and luminescence properties of these films are investigated as a function of Tb{sup 3+} doping concentration by X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), spectroscopic ellipsometry, UV-Visible spectroscopy and photoluminescence spectroscopy. The as-deposited films are found to be highly crystalline with wurtzite hexagonal phase of ZnO. The characteristic features of hexagonal wurtzite structure of ZnO, particularly the appearance of non-polar E{sub 2} modes are easily identified from the Raman spectra of the films. The surface morphology of the films revealed by FESEM and AFM images present a dense distribution of grains. The elemental analysis carried out using energy dispersive X-ray (EDX) spectra confirms the incorporation of Tb{sup 3+} ions in the ZnO lattice. The films are highly transparent in the visible region. Using ellipsometric analysis, the variation of refractive index, dielectric constant and thickness of the films are studied as a function of Tb{sup 3+} doping concentration. The photoluminescence spectra of the Tb{sup 3+} doped ZnO films recorded using an excitation radiation of wavelength 325 nm from a He-Cd laser exhibit visible luminescence ~430, 490, 516 and 542 nm. The origin of visible emissions ~490 and 542 nm in the doped films can be attributed to 5D{sub 4}→7F{sub 6} and 5D{sub 4}→7F{sub 5} transition of Tb{sup 3+} ion respectively. The intensity of the emission at 542 nm is found to be decreasing at higher doping concentration due to concentration quenching effect. The blue emission in the films can be attributed to the electron transition from shallow donor level formed by interstitial Zn atoms to the top of the valence band. The origin of the visible emission ~516 nm is attributed

  1. Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

    Science.gov (United States)

    Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

    2014-03-01

    In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

  2. Chemical synthesis of highly stable PVA/PANI films for supercapacitor application

    Energy Technology Data Exchange (ETDEWEB)

    Patil, D.S.; Shaikh, J.S.; Dalavi, D.S.; Kalagi, S.S. [Thin Films Materials laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Patil, P.S., E-mail: psp_phy@unishivaji.ac.in [Thin Films Materials laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

    2011-08-15

    Highlights: {yields} Chemical synthesis of PVA/PANI films by spin and dip coating at room temperature. {yields} Thickness dependent supercapacitor behavior of PVA/PANI film. {yields} The synthesized film are highly stable up to 20,000 cycles. - Abstract: Polyvinyl alcohol (PVA)/polyaniline (PANI) thin films were chemically synthesized by adopting two step process: initially a thin layer (200 nm) of PVA was spin coated by using an aqueous PVA solution onto fluorine doped tin oxide (FTO) coated glass substrate, afterwards PANI was chemically polymerized from aniline monomer and dip coated onto the precoated substrate. The thickness of PANI layer was varied from 293 nm to 2367 nm by varying deposition cycles onto the precoated PVA thin film. The resultant PVA/PANI films were characterized for their optical, morphological and electrochemical properties. The FT-IR and Raman spectra revealed characteristic features of the PANI phase. The SEM study showed porous spongy structure. Electrochemical properties were studied by electrochemical impedance measurement and cyclic voltammetry. The electrochemical performance of PVA/PANI thin films was investigated in 1 M H{sub 2}SO{sub 4} aqueous electrolyte. The highest specific capacitance of 571 Fg{sup -1} was observed for the optimized thickness of 880 nm. The film was found to be stable for more than 20,000 cycles. The samples degraded slightly (25% decrement in specific capacitance) for the first 10,000 cycles. The degradation becomes much slower (10.8% decrement in specific capacitance) beyond 10,000 cycles. This dramatic improvement in the electrochemical stability of the PANI samples, without sacrificing specific capacitance was attributed to the optimized PVA layer.

  3. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    International Nuclear Information System (INIS)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook

    2017-01-01

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  4. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook, E-mail: cwjeon@ynu.ac.kr

    2017-04-30

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  5. Challenges in IC design for hearing aids

    DEFF Research Database (Denmark)

    Jørgensen, Ivan Harald Holger

    2012-01-01

    Designing modern hearing aids is a formidable challenge. The size of hearing aids is constantly decreasing, making them virtually invisible today. Still, as in all other modern electronics, more and more features are added to these devices driven by the development in modern IC technology....... The demands for performance and features at very low supply voltage and power consumption constantly prove a challenge to the physical design of hearing aids and not at least the design of the ICs for these. As a result of this all large hearing aid manufacturers use fully customized ASICs in their products...... to produce a competitive advantage. This presentation will give a brief insight into the hearing aid market and industry, a brief view of the historic development of hearing aids and an introduction to how a modern hearing is constructed showing the amplifier as the key component in the modern hearing aid...

  6. Development of stripper films made of high strength, long life carbon nitride

    International Nuclear Information System (INIS)

    Oyaizu, Mitsuhiro; Sugai, Isamu; Yoshida, Koji; Haruyama, Yoichi.

    1994-01-01

    The heavy ion accelerators such as tandem type van de Graaff, linear accelerators, cyclotrons and so on raise the acceleration efficiency usually by producing multivalent ions by making the charge conversion of heavy ions using carbon thin films. However, when the electrons of large atomic number ions of low energy, high intensity current are stripped, the conventional carbon thin films on the market or home made were very short in their life, and have become the cause of remarkably lowering the acceleration efficiency. The concrete objectives of the development are the use of the charge conversion of unstable nuclear ions in the E arena accelerator for JHP of the future project of Institute of Nuclear Study and the manufacture of the carbon films which are used for the charge conversion of the H beam of high energy, but at the time of exchanging the films, there is the problem of the radiation exposure of large amount, therefore, the development of high reliability, long life stripper films has been strongly demanded. The experiment was carried out by controlled carbon arc discharge process using both AC and DC and the ion beam sputtering process using reactive nitrogen gas. The results are reported. (K.I.)

  7. High critical current density YBCO films and fabrication of dc-SQUIDs

    CERN Document Server

    Kuriki, S; Kawaguchi, Y; Matsuda, M; Otowa, T

    2002-01-01

    In order to improve the sensitivity of SQUID magnetometers made of high-T sub c films, we have studied the conditions of pulsed-laser deposition of YBCO films. Among the different deposition parameters examined, extensive degassing of the vacuum chamber before and precise control of the substrate temperature during the film deposition were found effective for obtaining high critical temperature T sub c and high critical current density J sub c. It was also found that the residual-resistance ratio has a clear correlation with J sub c , indicating that it can be a good, and easy to measure, index of the film quality. Films having T sub c approx 89-90 K and J sub c >= 5x10 sup 6 A cm sup - sup 2 at 77 K were used to fabricate SQUIDs without a pickup loop. Grain-boundary junctions formed on bicrystal substrates with a 30 deg. misorientation angle exhibited I sub c R sub n values of more than 100 mu V at 77 K. The well-known scaling behaviour of the relation I sub c R sub n propor to (J sup G sup B sub c) sup 1 su...

  8. Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies

    International Nuclear Information System (INIS)

    Lu, Y.; Ziani, A.; Le Paven-Thivet, C.; Benzerga, R.; Le Gendre, L.; Fasquelle, D.; Kassem, H.

    2011-01-01

    Lanthanum titanium oxynitride (LaTiO x N y ) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO x N y thin films deposited on conductive single crystal Nb–STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiO x N y polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO 2 /Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO x N y films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).

  9. Studies on the high electronic energy deposition in polyaniline thin films

    International Nuclear Information System (INIS)

    Deshpande, N.G.; Gudage, Y.G.; Vyas, J.C.; Singh, F.; Sharma, Ramphal

    2008-01-01

    We report here the physico-chemical changes brought about by high electronic energy deposition of gold ions in HCl doped polyaniline (PANI) thin films. PANI thin films were synthesized by in situ polymerization technique. The as-synthesized PANI thin films of thickness 160 nm were irradiated using Au 7+ ion of 100 MeV energy at different fluences, namely, 5 x 10 11 ions/cm 2 and 5 x 10 12 ions/cm 2 , respectively. A significant change was seen after irradiation in electrical and photo conductivity, which may be related to increased carrier concentration, and structural modifications in the polymer film. In addition, the high electronic energy deposition showed other effects like cross-linking of polymer chains, bond breaking and creation of defect sites. AFM observations revealed mountainous type features in all (before and after irradiation) PANI samples. The average size (diameter) and density of such mountainous clusters were found to be related with the ion fluence. The AFM profiles also showed change in the surface roughness of the films with respect to irradiation, which is one of the peculiarity of the high electronic energy deposition technique

  10. Structure and magnetic properties of highly textured nanocrystalline Mn–Zn ferrite thin film

    Energy Technology Data Exchange (ETDEWEB)

    Joseph, Jaison, E-mail: jaisonjosephp@gmail.com [Department of Physics, Goverment College, Khandola, Goa 403107 India (India); Tangsali, R.B. [Department of Physics, Goa University, Taleigao Plateau, Goa 403206 India (India); Pillai, V.P. Mahadevan [Department of Optoelectronics, University of Kerala,Thiruvananthapuram, Kerala 695581 India (India); Choudhary, R.J.; Phase, D.M.; Ganeshan, V. [UGC-DAE-CSR Indore, Madhya Pradesh 452017 India. (India)

    2015-01-01

    Nanoparticles of Mn{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} were chemically synthesized by co-precipitating the metal ions in aqueous solutions in a suitable alkaline medium. The identified XRD peaks confirm single phase spinal formation. The nanoparticle size authentication is carried out from XRD data using Debye Scherrer equation. Thin film fabricated from this nanomaterial by pulse laser deposition technique on quartz substrate was characterized using XRD and Raman spectroscopic techniques. XRD results revealed the formation of high degree of texture in the film. AFM analysis confirms nanogranular morphology and preferred directional growth. A high deposition pressure and the use of a laser plume confined to a small area for transportation of the target species created certain level of porosity in the deposited thin film. Magnetic property measurement of this highly textured nanocrystalline Mn–Zn ferrite thin film revealed enhancement in properties, which are explained on the basis of texture and surface features originated from film growth mechanism.

  11. Development of liquid film thickness measurement technique by high-density multipoint electrodes method

    International Nuclear Information System (INIS)

    Arai, Takahiro; Furuya, Masahiro; Kanai, Taizo

    2010-01-01

    High-density multipoint electrode method was developed to measure a liquid film thickness transient on a curved surface. The devised method allows us to measure spatial distribution of liquid film with its conductance between electrodes. The sensor was designed and fabricated as a multilayer print circuit board, where electrode pairs were distributed in reticular pattern with narrow interval. In order to measure a lot of electrode pairs at a high sampling rate, signal-processing method used by the wire mesh sensor measurement system was applied. An electrochemical impedance spectrometry concludes that the sampling rate of 1000 slices/s is feasible without signal distortion by electric double layer. The method was validated with two experimental campaigns: (1) a droplet impingement on a flat film and (2) a jet impingement on a rod-shape sensor surface. In the former experiment, a water droplet having 4 mm in diameter impinged onto the 1 mm thick film layer. A visual observation study with high-speed video camera shows after the liquid impingement, the water layer thinning process was clearly demonstrated with the sensor. For the latter experiment, the flexible circuit board was bended to form a cylindrical shape to measure water film on a simulated fuel rod in bundle geometry. A water jet having 3 mm in diameter impinged onto the rod-shape sensor surface. The process of wetting area enlargement on the rod surface was demonstrated in the same manner that the video-frames showed. (author)

  12. High energy density and efficiency achieved in nanocomposite film capacitors via structure modulation

    Science.gov (United States)

    Zeng, Yi; Shen, Zhong-Hui; Shen, Yang; Lin, Yuanhua; Nan, Ce-Wen

    2018-03-01

    Flexible dielectric polymer films with high energy storage density and high charge-discharge efficiency have been considered as promising materials for electrical power applications. Here, we design hierarchical structured nanocomposite films using nonlinear polymer poly(vinylidene fluoride-HFP) [P(VDF-HFP)] with inorganic h-boron nitride (h-BN) nanosheets by electrospinning and hot-pressing methods. Our results show that the addition of h-BN nanosheets and the design of the hierarchical multilayer structure in the nanocomposites can remarkably enhance the charge-discharge efficiency and energy density. A high charge-discharge efficiency of 78% and an energy density of 21 J/cm3 can be realized in the 12-layered PVDF/h-BN nanocomposite films. Phase-field simulation results reveal that the spatial distribution of the electric field in these hierarchical structured films affects the charge-discharge efficiency and energy density. This work provides a feasible route, i.e., structure modulation, to improve the energy storage performances for nanocomposite films.

  13. Ultra-high wear resistance of ultra-nanocrystalline diamond film: Correlation with microstructure and morphology

    Science.gov (United States)

    Rani, R.; Kumar, N.; Lin, I.-Nan

    2016-05-01

    Nanostructured diamond films are having numerous unique properties including superior tribological behavior which is promising for enhancing energy efficiency and life time of the sliding devices. High wear resistance is the principal criterion for the smooth functioning of any sliding device. Such properties are achievable by tailoring the grain size and grain boundary volume fraction in nanodiamond film. Ultra-nanocrystalline diamond (UNCD) film was attainable using optimized gas plasma condition in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. Crystalline phase of ultra-nanodiamond grains with matrix phase of amorphous carbon and short range ordered graphite are encapsulated in nanowire shaped morphology. Film showed ultra-high wear resistance and frictional stability in micro-tribological contact conditions. The negligible wear of film at the beginning of the tribological contact was later transformed into the wearless regime for prolonged sliding cycles. Both surface roughness and high contact stress were the main reasons of wear at the beginning of sliding cycles. However, the interface gets smoothened due to continuous sliding, finally leaded to the wearless regime.

  14. Structural and optical properties of zirconia thin films deposited by reactive high-power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaoli; Jin, Jie [Tianjin University, School of Electronic Information Engineering, Tianjin (China); Cheng, Jui-Ching, E-mail: juiching@ntut.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lee, Jyh-Wei [Ming Chi University of Technology, College of Materials Engineering, New Taipei City, Taiwan (China); Wu, Kuo-Hong [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lin, Kuo-Cheng; Tsai, Jung-Ruey [Asia University, Department of Photonics and Communication Engineering, Taichung, Taiwan (China); Liu, Kou-Chen, E-mail: jacobliu@mail.cgu.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China)

    2014-11-03

    Zirconia films are deposited by reactive high power impulse magnetron sputtering (HiPIMS) technology on glass and indium-tin-oxide (ITO)/glass substrates. Preparation, microstructure and optical characteristics of the films have been studied. During deposition, the influence of the target power and duty cycle on the peak current–voltage and power density has been observed in oxide mode. Transparent thin films under different oxygen proportions are obtained on the two substrates. Atomic force microscopy measurements showed that the surface roughness of the films was lower by reactive HiPIMS than DC sputtering for all oxygen contents. The transmission and reflectance properties of differently grown zirconia films were also investigated using an ultraviolet–visible spectrophotometer. The optical transmittance of films grown on glass substrates by HiPIMS reached maximum values above 90%, which exceeded that by DC sputtering. The band edge near 5.86 eV shifted to a lower wavelength for zirconia films prepared with oxygen flow rates lower than 4.5 sccm. For the films prepared on ITO/glass substrates, the transmittance and the band gap of zirconia films were limited by ITO films; a maximum average transmittance of 84% was obtained at 4.5 sccm O{sub 2} and the energy band gap was in the range of 3.7–3.8 eV for oxygen flow rates ranging from 3.5 to 5.0 sccm. Finally, the electrical properties of zirconia films have also been discussed. - Highlights: • Zirconia films are deposited by reactive high power impulse magnetron sputtering. • Low roughness films are obtained. • Films show a high transmittance (> 90%). • Films prepared on glass have a band gap of 5.9 eV.

  15. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    OpenAIRE

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the...

  16. Simulation of SEU transients in CMOS ICs

    International Nuclear Information System (INIS)

    Kaul, N.; Bhuva, B.L.; Kerns, S.E.

    1991-01-01

    This paper reports that available analytical models of the number of single-event-induced errors (SEU) in combinational logic systems are not easily applicable to real integrated circuits (ICs). An efficient computer simulation algorithm set, SITA, predicts the vulnerability of data stored in and processed by complex combinational logic circuits to SEU. SITA is described in detail to allow researchers to incorporate it into their error analysis packages. Required simulation algorithms are based on approximate closed-form equations modeling individual device behavior in CMOS logic units. Device-level simulation is used to estimate the probability that ion-device interactions produce erroneous signals capable of propagating to a latch (or n output node), and logic-level simulation to predict the spread of such erroneous, latched information through the IC. Simulation results are compared to those from SPICE for several circuit and logic configurations. SITA results are comparable to this established circuit-level code, and SITA can analyze circuits with state-of-the-art device densities (which SPICE cannot). At all IC complexity levels, SITAS offers several factors of 10 savings in simulation time over SPICE

  17. Multilayer Integrated Film Bulk Acoustic Resonators

    CERN Document Server

    Zhang, Yafei

    2013-01-01

    Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education’s Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang’s research group.

  18. High index glass thin film processing for photonics and photovoltaic (PV) applications

    Science.gov (United States)

    Ogbuu, Okechukwu Anthony

    To favorably compete with fossil-fuel technology, the greatest challenge for thin film solar-cells is to improve efficiency and reduce material cost. Thickness scaling to thin film reduces material cost but affects the light absorption in the cells; therefore a concept that traps incident photons and increases its optical path length is needed to boost absorption in thin film solar cells. One approach is the integration of low symmetric gratings (LSG), using high index material, on either the front-side or backside of 30 um thin c-Si cells. In this study, Multicomponent TeO2--Bi2O 3--ZnO (TBZ) glass thin films were prepared using RF magnetron sputtering under different oxygen flow rates. The influences of oxygen flow rate on the structural and optical properties of the resulting thin films were investigated. The structural origin of the optical property variation was studied using X-ray diffraction, X-ray photoelectron spectroscopy, Raman Spectroscopy, and transmission electron microscopy. The results indicate that TBZ glass thin film is a suitable material for front side LSG material photovoltaic and photonics applications due to their amorphous nature, high refractive index (n > 2), broad band optical transparency window, low processing temperature. We developed a simple maskless method to pattern sputtered tellurite based glass thin films using unconventional agarose hydrogel mediated wet etching. Conventional wet etching process, while claiming low cost and high throughput, suffers from reproducibility and pattern fidelity issues due to the isotropic nature of wet chemical etching when applied to glasses and polymers. This method overcomes these challenges by using an agarose hydrogel stamp to mediate a conformal etching process. In our maskless method, agarose hydrogel stamps are patterned following a standard soft lithography and replica molding process from micropatterned masters and soaked in a chemical etchant. The micro-scale features on the stamp are

  19. Photochemical approach to high-barrier films for the encapsulation of flexible laminary electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Prager, L., E-mail: lutz.prager@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Helmstedt, U. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Herrnberger, H. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Kahle, O. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany); Kita, F. [AZ Electronic Materials Germany GmbH, Rheingaustraße 190-196, 65203 Wiesbaden (Germany); Münch, M. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Pender, A.; Prager, A.; Gerlach, J.W. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Stasiak, M. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany)

    2014-11-03

    Based on results of preceding research and development, thin gas barriers were made by wet application of perhydropolysilazane solution onto polymer films and its subsequent photo-initiated conversion to dense silica layers applying vacuum ultraviolet irradiation. Compared to the state of the art, these layers were sufficiently improved and characterized by spectroscopic methods, by scanning electron microscopy and by gas permeation measurements. Water vapor transmission rates (WVTR) below 10{sup −2} g m{sup −2} d{sup −1} were achieved. In this way, single barrier films were developed and produced on a pilot plant from roll to roll, 250 mm wide, at speeds up to 10 m min{sup −1}. Two films were laminated using adhesives curable with ultraviolet (UV) light and evaluated by peel tests, gas permeation measurement and climate testing. It could be shown that the described high-barrier laminates which exhibit WVTR ≈ 5 × 10{sup −4} g m{sup −2} d{sup −1}, determined by the calcium mirror method, are suitable for encapsulation of flexible thin-film photovoltaic modules. Durability of the encapsulated modules could be verified in several climate tests including damp-heat, thermo-cycle (heating, freezing, wetting) and UV exposures which are equivalent to more than 20 years of endurance at outdoor conditions in temperate climate. In the frame of further research and technical development it seems to be possible to design a cost efficient industrial scale process for the production of encapsulation films for photovoltaic applications. - Highlights: • Dense silica barrier layers were developed by a photochemical approach. • Polymer based barrier films were laminated yielding flexible high-barrier films. • Using these laminates photovoltaic test modules were encapsulated and tested. • A durability of more than 20 years at outdoor conditions could be proved.

  20. Effects of high dose gamma irradiation on ITO thin film properties

    Energy Technology Data Exchange (ETDEWEB)

    Alyamani, A. [National Nanotechnology Center, King Abdul-Aziz City for Science and Technology (KACST), Riyadh (Saudi Arabia); Mustapha, N., E-mail: nazirmustapha@hotmail.com [Dept. of Physics, College of Sciences, Al Imam Mohammad Ibn Saud Islamic University, P.O. Box 90950, Riyadh 11623 (Saudi Arabia)

    2016-07-29

    Transparent thin-film Indium Tin Oxides (ITO) were prepared on 0.7 mm thick glass substrates using a pulsed laser deposition (PLD) process with average thickness of 150 nm. The samples were then exposed to high gamma γ radiation doses by {sup 60}Co radioisotope. The films have been irradiated by performing exposure cycles up to 250 kGy total doses at room temperature. The surface structures before and after irradiation were analysed by x-ray diffraction. Atomic Force Microscopy (AFM) was performed on all samples before and after irradiation to investigate any change in the grain sizes, and also in the roughness of the ITO surface. We investigated the influence of γ irradiation on the spectra of transmittance T, in the ultraviolet-visible-near infrared spectrum using spectrophotometer measurements. Energy band gap E{sub g} was then calculated from the optical spectra for all ITO films. It was found that the optical band gap values decreased as the radiation dose was increased. To compare the effect of the irradiation on refractive index n and extinction coefficient k properties, additional measurements were done on the ITO samples before and after gamma irradiation using an ellipsometer. The optical constants n and k increased by increasing the irradiation doses. Electrical properties such as resistivity and sheet resistance were measured using the four-point probe method. The good optical, electrical and morphological properties maintained by the ITO films even after being exposed to high gamma irradiation doses, made them very favourable to be used as anodes for solar cells and as protective coatings in space windows. - Highlights: • Indium Tin Oxide (ITO) thin films were deposited by pulsed laser deposition. • Effects of Gamma irradiation were investigated. • Changes of optical transmission and electrical properties of ITO films were studied. • Intensity of the diffraction peaks and the film's structure changed with increasing irradiation doses.

  1. Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films.

    Science.gov (United States)

    Chirilă, Adrian; Buecheler, Stephan; Pianezzi, Fabian; Bloesch, Patrick; Gretener, Christina; Uhl, Alexander R; Fella, Carolin; Kranz, Lukas; Perrenoud, Julian; Seyrling, Sieghard; Verma, Rajneesh; Nishiwaki, Shiro; Romanyuk, Yaroslav E; Bilger, Gerhard; Tiwari, Ayodhya N

    2011-09-18

    Solar cells based on polycrystalline Cu(In,Ga)Se(2) absorber layers have yielded the highest conversion efficiency among all thin-film technologies, and the use of flexible polymer films as substrates offers several advantages in lowering manufacturing costs. However, given that conversion efficiency is crucial for cost-competitiveness, it is necessary to develop devices on flexible substrates that perform as well as those obtained on rigid substrates. Such comparable performance has not previously been achieved, primarily because polymer films require much lower substrate temperatures during absorber deposition, generally resulting in much lower efficiencies. Here we identify a strong composition gradient in the absorber layer as the main reason for inferior performance and show that, by adjusting it appropriately, very high efficiencies can be obtained. This implies that future manufacturing of highly efficient flexible solar cells could lower the cost of solar electricity and thus become a significant branch of the photovoltaic industry.

  2. High performance sandwich structured Si thin film anodes with LiPON coating

    Science.gov (United States)

    Luo, Xinyi; Lang, Jialiang; Lv, Shasha; Li, Zhengcao

    2018-04-01

    The sandwich structured silicon thin film anodes with lithium phosphorus oxynitride (LiPON) coating are synthesized via the radio frequency magnetron sputtering method, whereas the thicknesses of both layers are in the nanometer range, i.e. between 50 and 200 nm. In this sandwich structure, the separator simultaneously functions as a flexible substrate, while the LiPON layer is regarded as a protective layer. This sandwich structure combines the advantages of flexible substrate, which can help silicon release the compressive stress, and the LiPON coating, which can provide a stable artificial solidelectrolyte interphase (SEI) film on the electrode. As a result, the silicon anodes are protected well, and the cells exhibit high reversible capacity, excellent cycling stability and good rate capability. All the results demonstrate that this sandwich structure can be a promising option for high performance Si thin film lithium ion batteries.

  3. STAR FORMATION ASSOCIATED WITH THE SUPERNOVA REMNANT IC443

    International Nuclear Information System (INIS)

    Xu Jinlong; Wang Junjie; Miller, Martin

    2011-01-01

    We have performed submillimeter and millimeter observations in CO lines toward supernova remnant (SNR) IC443. The CO molecular shell coincides well with the partial shell of the SNR detected in radio continuum observations. Broad emission lines and three 1720 MHz OH masers were detected in the CO molecular shell. The present observations have provided further evidence in support of the interaction between the SNR and the adjoining molecular clouds (MCs). The total mass of the MCs is 9.26 x 10 3 M sun . The integrated CO line intensity ratio (R I CO(3-2) /I CO(2-1) ) for the whole MC is between 0.79 and 3.40. The average value is 1.58, which is much higher than previous measurements of individual Galactic MCs. Higher line ratios imply that shocks have driven into the MCs. We conclude that high R I CO(3-2) /I CO(2-1) is identified as a good signature of the SNR-MC interacting system. Based on the IRAS Point Source Catalog and the Two Micron All Sky Survey near-infrared database, 12 protostellar object and 1666 young stellar object (YSO) candidates (including 154 classical T Tauri stars and 419 Herbig Ae/Be stars) are selected. In the interacting regions, the significant enhancement of the number of protostellar objects and YSOs indicates the presence of some recently formed stars. After comparing the characteristic timescales of star formation with the age of IC443, we conclude that the protostellar objects and YSO candidates are not triggered by IC443. For the age of the stellar winds shell, we have performed our calculation on the basis of a stellar wind shell expansion model. The results and analysis suggest that the formation of these stars may be triggered by the stellar winds of the IC443 progenitor.

  4. Synthesis of polymer/inorganic nanocomposite films using highly porous inorganic scaffolds.

    Science.gov (United States)

    Zhang, Huanjun; Popp, Matthias; Hartwig, Andreas; Mädler, Lutz

    2012-04-07

    Polymeric/inorganic nanocomposite films have been fabricated through a combination of flame-spray-pyrolysis (FSP) made inorganic scaffold and surface initiated polymerization of cyanoacrylate. The highly porous structure of pristine SnO(2) films allows the uptake of cyanoacrylate and the polymerization is surface initiated by the water adsorbed onto the SnO(2) surface. Scanning electron microscopy study reveals a nonlinear increase in the composite particle size and the film thickness with polymerization time. The structural change is rather homogeneous throughout the whole layer. The composite is formed mainly by an increase of the particle size and not by just filling the existing pores. High-resolution transmission electron microscopy imaging shows SnO(2) nanoparticles embedded in the polymeric matrix, constituting the nanocomposite material. Thermogravimetric analysis indicates that the porosity of the nanocomposite films decreases from 98% to 75%, resulting in a significant enhancement of the hardness of the films. DC conductivity measurements conducted in situ on the nanocomposite layer suggest a gradual increase in the layer resistance, pointing to a loss of connectivity between the SnO(2) primary particles as the polymerization proceeds. This journal is © The Royal Society of Chemistry 2012

  5. High thermoelectric power factor from multilayer solution-processed organic films

    Science.gov (United States)

    Zuo, Guangzheng; Andersson, Olof; Abdalla, Hassan; Kemerink, Martijn

    2018-02-01

    We investigate the suitability of the "sequential doping" method of organic semiconductors for thermoelectric applications. The method consists of depositing a dopant (F4TCNQ) containing solution on a previously cast semiconductor (P3HT) thin film to achieve high conductivity, while preserving the morphology. For very thin films (˜25 nm), we achieve a high power factor around 8 μW/mK-2 with a conductivity over 500 S/m. For the increasing film thickness, conductivity and power factor show a decreasing trend, which we attribute to the inability to dope the deeper parts of the film. Since thick films are required to extract significant power from thermoelectric generators, we developed a simple additive technique that allows the deposition of an arbitrary number of layers without significant loss in conductivity or power factor that, for 5 subsequent layers, remain at ˜300 S/m and ˜5 μW/mK-2, respectively, whereas the power output increases almost one order of magnitude as compared to a single layer. The efficient doping in multilayers is further confirmed by an increased intensity of (bi)polaronic features in the UV-Vis spectra.

  6. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Science.gov (United States)

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  7. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Directory of Open Access Journals (Sweden)

    Chao-Ming Hsu

    2015-05-01

    Full Text Available High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  8. Properties and Applications of High Emissivity Composite Films Based on Far-Infrared Ceramic Powder.

    Science.gov (United States)

    Xiong, Yabo; Huang, Shaoyun; Wang, Wenqi; Liu, Xinghai; Li, Houbin

    2017-11-29

    Polymer matrix composite materials that can emit radiation in the far-infrared region of the spectrum are receiving increasing attention due to their ability to significantly influence biological processes. This study reports on the far-infrared emissivity property of composite films based on far-infrared ceramic powder. X-ray fluorescence spectrometry, Fourier transform infrared spectroscopy, thermogravimetric analysis, and X-ray powder diffractometry were used to evaluate the physical properties of the ceramic powder. The ceramic powder was found to be rich in aluminum oxide, titanium oxide, and silicon oxide, which demonstrate high far-infrared emissivity. In addition, the micromorphology, mechanical performance, dynamic mechanical properties, and far-infrared emissivity of the composite were analyzed to evaluate their suitability for strawberry storage. The mechanical properties of the far-infrared radiation ceramic (cFIR) composite films were not significantly influenced ( p ≥ 0.05) by the addition of the ceramic powder. However, the dynamic mechanical analysis (DMA) properties of the cFIR composite films, including a reduction in damping and shock absorption performance, were significant influenced by the addition of the ceramic powder. Moreover, the cFIR composite films showed high far-infrared emissivity, which has the capability of prolonging the storage life of strawberries. This research demonstrates that cFIR composite films are promising for future applications.

  9. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

    Science.gov (United States)

    Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

    2018-02-01

    A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

  10. Construction of sputtering system and preparation of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Kaynak, E.

    2000-01-01

    The preparation of high T c superconducting thin film is important both for the understanding of fundamental behaviours of these materials and for the investigations on the usefulness of technological applications. High quality thin films can be prepared by various kinds of techniques being used today. Among these, sputtering is the most preferred one. The primary aim of this work is the construction of a r. f. and c. magnetron sputtering system. For this goal, a magnetron sputtering system was designed and constructed having powers up to 500W (r.f.) and 1KW (d.c.) that enables to deposit thin films of various kinds of materials: metals, ceramics and magnetic materials. The temperature dependence of the electrical resistance of the films was investigated by using four-point probe method. The zero resistance and the transition with of the films were measured as 80-85 K, and 2-9 K, respectively. The A.C. susceptibility experiments were done by utilising the system that was designed and constructed. The applied field dependence of the real and imaginary components of the susceptibility that were measured between the 77-120 K temperature interval and at a fixed frequency was investigated

  11. Development of brain injury criteria (BrIC).

    Science.gov (United States)

    Takhounts, Erik G; Craig, Matthew J; Moorhouse, Kevin; McFadden, Joe; Hasija, Vikas

    2013-11-01

    between CSDM - BrIC and MPS - BrIC respectively. AIS 3+, 4+ and 5+ field risk of anatomic brain injuries was also estimated using the National Automotive Sampling System - Crashworthiness Data System (NASS-CDS) database for crash conditions similar to the frontal NCAP and side impact conditions that the ATDs were tested in. This was done to assess the risk curve ratios derived from HIC risk curves. The results of the study indicated that: (1) the two available human head models - SIMon and GHBMC - were found to be highly correlated when CSDMs and max principal strains were compared; (2) BrIC correlates best to both - CSDM and MPS, and rotational velocity (not rotational acceleration) is the mechanism for brain injuries; and (3) the critical values for angular velocity are directionally dependent, and are independent of the ATD used for measuring them. The newly developed brain injury criterion is a complement to the existing HIC, which is based on translational accelerations. Together, the two criteria may be able to capture most brain injuries and skull fractures occurring in automotive or any other impact environment. One of the main limitations for any brain injury criterion, including BrIC, is the lack of human injury data to validate the criteria against, although some approximation for AIS 2+ injury is given based on the angular velocities calculated at 50% probability of concussion in college football players instrumented with 5 DOF helmet system. Despite the limitations, a new kinematic rotational brain injury criterion - BrIC - may offer a way to capture brain injuries in situations when using translational accelerations based HIC alone may not be sufficient.

  12. High-power sputtering employed for film deposition

    International Nuclear Information System (INIS)

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  13. Magnetic properties of electroplated nano/microgranular NiFe thin films for rf application

    NARCIS (Netherlands)

    Zhuang, Y.; Vroubel, M.; Rejaei, B.; Burghartz, J.N.; Attenborough, K.

    2005-01-01

    A granular NiFe thin film with large in-plane magnetic anisotropy and high ferromagnetic-resonance frequency developed for radio-frequency integrated circuit (IC) applications is presented. During the deposition, three-dimensional (3D) growth occurs, yielding NiFe grains (? ? 1.0??m). Nanonuclei (?

  14. Development of the method of sensitivity improvement of photographic film applicable in high-energy physics experiments

    International Nuclear Information System (INIS)

    Gokieli, V.D.

    1986-01-01

    Sensitivity improvement of photographic films applicable in high-energy physics experiments is discussed. To get optimal operating conditions for photographic film PT-6 to check its physical properties on electron beam and in cosmic rays a set for film samples exposure in visible spectrum and in X-rays is constructed. The set includes a start up device, high-voltage pulse oscillator, shapers, a chamber for the sample exposure, voltage divider and electron oscillograph

  15. Noise measurements of YBa2Cu3O7 thin film high-temperature superconductors

    International Nuclear Information System (INIS)

    Hall, J.J.

    1992-01-01

    The characteristics of thin-film YBa2Cu3O7 superconductors were studied from the superconducting region through the transition region and into the normal region. The properties studied included the resistance-temperature, current-voltage, and electrical noise with concentration of measurements in the transition region. The resistance vs. temperature measurements show a zero resistance followed by a small rise in magnitude at the onset of resistance followed by a sharp increase until the resistance tapers off in the fully normal region. The a-axis films had a larger normal resistivity, a lower critical temperature, and a broader transition than the similar c-axis films. The current(I) - voltage(V) measurements were concentrated in the transition region. A power relation between I and V was found to be V varies as I a(T) where a(T) is temperature dependent starting high the onset of vortex formation, approaches 3 at the vortex unbinding temperature, and goes to 1 when fully normal. This behavior was predicted by the Kosterlitz-Thouless theory and was found experimentally in all four films measured. The current-induced electrical noise characteristics were measured for four samples varying in thickness and axis orientation. Each film exhibited a widely varying magnitude of the noise voltage spectral density (S V ) in the transition region with a leveling off when fully normal. The normalized noise (S V /V squared) showed a sharp decrease in magnitude from the onset of measurable noise continually decreasing until flattening out when fully normal. The a-axis films exhibited S V /V squared over 3 order of magnitude larger than the c-axis films in the transition and normal regions. The normalized temperature coefficient of resistance (beta) was plotted against S V /V squared on a log-log scale to see if the noise generated was due to temperature fluctuations (slope = 2)

  16. A radiochromic film based on leucomalachite green for high-dose dosimetry applications

    International Nuclear Information System (INIS)

    Soliman, Y.S.; Basfar, A.A.; Msalam, R.I.

    2014-01-01

    A colorless polyvinyl butyral film (PVB) based on radiation-sensitive dye of leucomalachite green (LMG) was investigated as a high-dose dosimeter for gamma radiation processing applications in the dose range of 3–150 kGy. The useful applications for such dose range are food irradiation treatment, medical devices sterilization and polymer modification. Gamma irradiation of the film induces a significant intensity of green color, which can be characterized by a main absorption band at 627 nm and a small band at 425 nm. The variation in response of irradiated film stored in the dark and under laboratory light illumination was less than 3% during the first 6 days of storage. The response of film during irradiation was slightly influenced by relative humidity in the range of 12–76%; however, it was significantly affected by temperature in the range of 5–40 °C. The radiation chemical yield was reported to be 6.76 × 10 −6  mol/J at the absorbed dose of 30 kGy for the film containing 6.5% of LMG dye. The overall uncertainty associated with routine dose monitoring would be less than 6% at a 95% confidence level if the dosimeter was being corrected for irradiation conditions and being calibrated with reference standard dosimeter in the production facility. - Highlights: • Development of a radiochromic film based on leucomalachite green dye for radiation processing dosimetry. • The dosimeter useful dose range is 3–150 kGy. • The dosimeter was slightly influenced by humidity levels during irradiation over the range of 12–76%. • The films stored in the dark have a good shelf life with a good stable response after irradiation. • Overall uncertainty of the dosimeter was less than 4.3% at σ

  17. A new dyed poly (vinyl butyral) film for high-dose applications

    International Nuclear Information System (INIS)

    Eid, S.A.; Beshir, W.B.; Ebraheem, S.

    2006-01-01

    The polymer films under investigation are comprising a mixture of 2 dyes, namely, 2,6-dichlorophenol indophenol sodium salt (DCP), and bromo cresol green (BCG) indicator in presence of different concentrations of chloral hydrate. The color of this film changes from the blue to purple and finally to yellow, the bleaching reaction for DCP takes place in the beginning, giving the tinge of purple color, followed by the transformation of BCG to its acidic form due to the presence of chloral hydrate. The response of these films is affected by the change in chloral hydrate concentration and also the ratio of the 2 combined dyes. Accordingly, these films could be used as dosimeter in two steps color change indicators, in the dose range from 0.2 to 6 kGy. To examine their suitability for eventual application in different food radiation processing, the dosimetric parameters, e.g. dose response, effect of relative humidity during irradiation on response as well as pre-and post-irradiation stability of these film are investigated. Using the phenomenon of HCl generation from PVC under irradiation, ph-indicating dyes have been added to PVC. A chlorine-containing polymer is not necessary for this reaction to occur. A similar color change can be produced if chloro alkanes are present in the dye-containing matrix (Whittaker, 1990). Ueno (1988) developed a radiation dosimeter from acidity indicators by coating a high molecular weight polymer support (e.g. polyester film) with a composition containing a halogen-containing polymer (e.g. PVC), a pigment which changes color with the change of ph and a basic material (e.g. KOH in EtOH). For routine dose monitoring in radiation processing, the polymeric dyed flexible films are most commonly used as dosimeters and indicators for both electron beams and gamma rays (Ebraheem et al., 1999 and McLaughlin et al

  18. A new approach to film dosimetry for high-energy photon beams using organic plastic scintillators

    International Nuclear Information System (INIS)

    Yeo, I.J.; Wang, C.-K.C.; Burch, S.E.

    1999-01-01

    Successful radiotherapy relies on accurate dose measurement. Traditional dosimeters such as ion chambers, TLDs and diodes have disadvantages such as relatively long measurement time and poor spatial resolution. These drawbacks become more serious problems for dynamic beams (i.e. with the use of dynamic wedges or even the intensity modulation technique). X-ray film, an integrating dosimeter, may not be associated with the above disadvantages and problems. However, there are several major issues regarding use of x-ray film for routine dosimetry, including the over-response of the film to low-energy photons, variations in the dose response curve (nonlinearity), lack of reproducibility due to variation in processing, etc. This paper addresses the first problem. That is, x-ray film over-responds to low-energy photons (energies below 400 keV), and thus generates unacceptably inaccurate dosimetric data compared with ion-chamber data. To overcome the over-response problem of x-ray film in a phantom, a scintillation method has been investigated. In this method, a film is sandwiched by two plastic scintillation screens to enhance the film response to upstream electrons, and therefore minimize the over-response caused by low-energy photons. The sandwiched system was tested with a 4 MV linac beam. The result shows that, depending on the uniformity of the scintillation screens, the depth-dose distribution obtained from the sandwich system can be made to agree well with that obtained from ion chambers. However, the required high degree of uniformity remains a challenge for the scintillation screen manufacturers. (author)

  19. High Refractive Organic–Inorganic Hybrid Films Prepared by Low Water Sol-Gel and UV-Irradiation Processes

    Directory of Open Access Journals (Sweden)

    Hsiao-Yuan Ma

    2016-03-01

    Full Text Available Organic-inorganic hybrid sols (Ti–O–Si precursor were first synthesized by the sol-gel method at low addition of water, and were then employed to prepare a highly refractive hybrid optical film. This film was obtained by blending the Ti–O–Si precursor with 2-phenylphenoxyethyl acrylate (OPPEA to perform photo-polymerization by ultraviolet (UV irradiation. Results show that the film transparency of poly(Ti–O–Si precursor-co-OPPEA film is higher than that of a pure poly(Ti–O–Si precursor film, and that this poly(Ti–O–Si precursor-co-OPPEA hybrid film exhibits a high transparency of ~93.7% coupled with a high refractive index (n of 1.83 corresponding to a thickness of 2.59 μm.

  20. Highly Yb-doped KGd(WO4)2 thin-film amplifier

    NARCIS (Netherlands)

    Yong, Yean Sheng; Aravazhi, S.; Vázquez-Córdova, Sergio Andrés; García Blanco, Sonia Maria; Pollnau, Markus

    We report record-high small-signal gain of 1050 dB/cm at 981 nm wavelength in a KGd0.425Yb0.575(WO4)2 thin film. The sensitivity of gain to the shift of beam-focus position, which is critical under non-waveguiding conditions, is investigated.

  1. Smooth Growth of Organic Semiconductor Films on Graphene for High-Efficiency Electronics

    NARCIS (Netherlands)

    Hlawacek, G.; Khokhar, F.S.; van Gastel, Raoul; Poelsema, Bene; Teichert, Christian

    2011-01-01

    High-quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron

  2. Fast Batch Production of High-Quality Graphene Films in a Sealed Thermal Molecular Movement System.

    Science.gov (United States)

    Xu, Jianbao; Hu, Junxiong; Li, Qi; Wang, Rubing; Li, Weiwei; Guo, Yufen; Zhu, Yongbo; Liu, Fengkui; Ullah, Zaka; Dong, Guocai; Zeng, Zhongming; Liu, Liwei

    2017-07-01

    Chemical vapor deposition (CVD) growth of high-quality graphene has emerged as the most promising technique in terms of its integrated manufacturing. However, there lacks a controllable growth method for producing high-quality and a large-quantity graphene films, simultaneously, at a fast growth rate, regardless of roll-to-roll (R2R) or batch-to-batch (B2B) methods. Here, a stationary-atmospheric-pressure CVD (SAPCVD) system based on thermal molecular movement, which enables fast B2B growth of continuous and uniform graphene films on tens of stacked Cu(111) foils, with a growth rate of 1.5 µm s -1 , is demonstrated. The monolayer graphene of batch production is found to nucleate from arrays of well-aligned domains, and the films possess few defects and exhibit high carrier mobility up to 6944 cm 2 V -1 s -1 at room temperature. The results indicate that the SAPCVD system combined with single-domain Cu(111) substrates makes it possible to realize fast batch-growth of high-quality graphene films, which opens up enormous opportunities to use this unique 2D material for industrial device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates

    NARCIS (Netherlands)

    Evseev, S. B.; Milosavljevic, S.; Nanver, L. K.

    2017-01-01

    Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number of interfaces between

  4. High-quality LaVO3 films as solar energy conversion material

    International Nuclear Information System (INIS)

    Zhang, Hai-Tian; Brahlek, Matthew; Ji, Xiaoyu; Lei, Shiming; Lapano, Jason

    2017-01-01

    Mott insulating oxides and their heterostructures have recently been identified as potential photovoltaic materials with favorable absorption properties and an intrinsic built-in electric field that can efficiently separate excited electron hole pairs. At the same time, they are predicted to overcome the Shockley-Queisser limit due to strong electron electron interaction present. Despite these premises a high concentration of defects commonly observed in Mott insulating films acting as recombination centers can derogate the photovoltaic conversion efficiency. With use of the self-regulated growth kinetics in hybrid molecular beam epitaxy, this obstacle can be overcome. High-quality, stoichiometric LaVO 3 films were grown with defect densities of in-gap states up to 2 orders of magnitude lower compared to the films in the literature, and a factor of 3 lower than LaVO 3 bulk single crystals. Photoconductivity measurements revealed a significant photoresponsivity increase as high as tenfold of stoichiometric LaVO 3 films compared to their nonstoichiometric counterparts. Furthermore, this work marks a critical step toward the realization of high-performance Mott insulator solar cells beyond conventional semiconductors.

  5. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact,...

  6. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices....

  7. Very high cycle fatigue crack initiation in electroplated Ni films under extreme stress gradients

    International Nuclear Information System (INIS)

    Baumert, E.K.; Pierron, O.N.

    2012-01-01

    A characterization technique based on kilohertz micro-resonators is presented to investigate the very high cycle fatigue behavior of 20 μm thick electroplated Ni films with a columnar microstructure (grain diameter less than 2 μm). The films exhibit superior fatigue resistance due to the extreme stress gradients at the surface. The effects of stress amplitude and environment on the formation of fatigue extrusions and micro-cracks are discussed based on scanning electron microscopy and the tracking of the specimens’ resonant frequency.

  8. Ferromagnetism carried by highly delocalized hybrid states in Sc-doped ZnO thin films

    KAUST Repository

    Benali Kanoun, Mohammed

    2012-05-29

    We present first-principles results for Sc-doped ZnOthin films. Neighboring Sc atoms in the surface and/or subsurface layers are found to be coupled ferromagnetically, where only two of the possible configurations induce spin polarization. In the first configuration, the polarization is carried by the Sc d states as expected for transition metaldoping. However, there is a second configuration which is energetically favorable. It is governed by polarized hybrid states of the Zns, O p, and Sc d orbitals. Such highly delocalized states can be an important ingredient for understanding the magnetism of dopedZnOthin films.

  9. High speed cine film studies of plasma behaviour and plasma surface interactions in tokamaks

    International Nuclear Information System (INIS)

    Goodall, D.H.J.

    1982-01-01

    High speed cine photography is a useful diagnostic aid for studying plasma behaviour and plasma surface interactions. Several workers have filmed discharges in tokamaks including ASDEX, DITE, DIVA, ISX, JFT2, TFR and PLT. These films are discussed and examples given of the observed phenomena which include plasma limiter interactions, diverted discharges, disruptions, magnetic islands and moving glowing objects often known as 'UFOs'. Examples of plasma structures in ASDEX and DITE not previously published are also given. The paper also reports experiments in DITE to determine the origin of UFOs. (orig.)

  10. New fabrication of high-frequency (100-MHz) ultrasound PZT film kerfless linear array.

    Science.gov (United States)

    Zhu, Benpeng; Chan, Ngai Yui; Dai, Jiyan; Shung, K Kirk; Takeuchi, Shinichi; Zhou, Qifa

    2013-04-01

    The paper describes the design, fabrication, and measurements of a high-frequency ultrasound kerfless linear array prepared from hydrothermal lead zirconate titanate (PZT) thick film. The 15-μm hydrothermal PZT thick film with an area of 1 × 1 cm, obtained through a self-separation process from Ti substrate, was used to fabricate a 32-element 100-MHz kerfless linear array with photolithography. The bandwidth at -6 dB without matching layer, insertion loss around center frequency, and crosstalk between adjacent elements were measured to be 39%, -30 dB, and -15 dB, respectively.

  11. Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperatures

    OpenAIRE

    Thiery, Nicolas; Naletov, Vladimir V.; Vila, Laurent; Marty, Alain; Brenac, Ariel; Jacquot, Jean-François; de Loubens, Grégoire; Viret, Michel; Anane, Abdelmadjid; Cros, Vincent; Youssef, Jamal Ben; Demidov, Vladislav E.; Demokritov, Sergej O.; Klein, Olivier

    2017-01-01

    We report a study on the electrical properties of 19 nm thick Yttrium Iron Garnet (YIG) films grown by liquid phase epitaxy. The electrical conductivity and Hall coefficient are measured in the high temperature range [300,400]~K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band-gap of $E_g\\approx 2$ eV, indicating that epitaxial YIG ultra-thin film...

  12. CMOS analog integrated circuit design technology; CMOS anarogu IC sekkei gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, H.; Fujisawa, A. [Fuji Electric Co. Ltd., Tokyo (Japan)

    2000-08-10

    In the field of the LSI (large scale integrated circuit) in rapid progress toward high integration and advanced functions, CAD (computer-aided design) technology has become indispensable to LSI development within a short period. Fuji Electric has developed design technologies and automatic design system to develop high-quality analog ICs (integrated circuits), including power supply ICs. within a short period. This paper describes CMOS (complementary metal-oxide semiconductor) analog macro cell, circuit simulation, automatic routing, and backannotation technologies. (author)

  13. Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

    Science.gov (United States)

    Fischer, A. M.; Wei, Y. O.; Ponce, F. A.; Moseley, M.; Gunning, B.; Doolittle, W. A.

    2013-09-01

    We have studied the properties of thick InxGa1-xN films, with indium content ranging from x ˜ 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x ˜ 0.6. Surprisingly, the InxGa1-xN film with x ˜ 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (˜400 °C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions.

  14. Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films

    Science.gov (United States)

    2013-01-01

    In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory. PMID:23634999

  15. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-09-02

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

  16. A Numerical Study of Anti-Vortex Film Cooling Designs at High Blowing Ratio

    Science.gov (United States)

    Heidmann, James D.

    2008-01-01

    A concept for mitigating the adverse effects of jet vorticity and liftoff at high blowing ratios for turbine film cooling flows has been developed and studied at NASA Glenn Research Center. This "anti-vortex" film cooling concept proposes the addition of two branched holes from each primary hole in order to produce a vorticity counter to the detrimental kidney vortices from the main jet. These vortices typically entrain hot freestream gas and are associated with jet separation from the turbine blade surface. The anti-vortex design is unique in that it requires only easily machinable round holes, unlike shaped film cooling holes and other advanced concepts. The anti-vortex film cooling hole concept has been modeled computationally for a single row of 30deg angled holes on a flat surface using the 3D Navier-Stokes solver Glenn-HT. A modification of the anti-vortex concept whereby the branched holes exit adjacent to the main hole has been studied computationally for blowing ratios of 1.0 and 2.0 and at density ratios of 1.0 and 2.0. This modified concept was selected because it has shown the most promise in recent experimental studies. The computational results show that the modified design improves the film cooling effectiveness relative to the round hole baseline and previous anti-vortex cases, in confirmation of the experimental studies.

  17. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Schmidt, J.A.; Arce, R.D. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2016-04-30

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  18. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    International Nuclear Information System (INIS)

    Garcés, F.A.; Budini, N.; Schmidt, J.A.; Arce, R.D.

    2016-01-01

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  19. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-01-01

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10 -4 and 2.3x10 -4 Ω·cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10 -4 Ω·cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates

  20. High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

    Science.gov (United States)

    Yu, Byoung-Soo; Ha, Tae-Jun

    2018-04-01

    The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

  1. Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

    Science.gov (United States)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2014-10-28

    Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

  2. Photoluminescence and reflectivity studies of high energy light ions irradiated polymethyl methacrylate films

    Science.gov (United States)

    Bharti, Madhu Lata; Singh, Fouran; Ramola, R. C.; Joshi, Veena

    2017-11-01

    The self-standing films of non-conducting polymethyl methacrylate (PMMA) were irradiated in vacuum using high energy light ions (HELIs) of 50 MeV Lithium (Li+3) and 80 MeV Carbon (C+5) at various ion dose to induce the optical changes in the films. Upon HELI irradiation, films exhibit a significant enhancement in optical reflectivity at the highest dose. Interestingly, the photoluminescence (PL) emission band with green light at (514.5 nm) shows a noticeable increase in the intensity with increasing ion dose for both ions. However, the rate of increase in PL intensity is different for both HELI and can be correlated with the linear energy transfer by these ions in the films. Origin of PL is attributed to the formation of carbon cluster and hydrogenated amorphous carbon in the polymer films. HAC clusters act as PL active centres with optical reflectivity. Most of the harmful radiation like UV are absorbed by the material and is becoming opaque after irradiation and this PL active material are useful in fabrication of optoelectronic devices, UV-filter, back-lit components in liquid crystal display systems, micro-components for integrate optical circuits, diffractive elements, advanced materials and are also applicable to the post irradiation laser treatment by means of ion irradiation.

  3. The preparation and characterization of CNx film with high nitrogen content by cathode electrodeposition

    International Nuclear Information System (INIS)

    Zhang, J.-T.; Cao, C.-B.; Lv Qiang; Li Chao; Zhu Hesun

    2003-01-01

    CN x thin film with high nitrogen content was prepared on ITO conductive glass substrates by cathode electrodeposition, using dicyandiamide (C 2 H 4 N 4 ) in acetone as precursors. The surface morphologies, atomic bonding state, and chemical composition were analyzed by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) spectroscopy. The CN x particles got nanometer level with the average size of 80 nm. The maximum value of the N/C atomic ratio was more than 1. Carbon and nitrogen existed mainly in the form of tetrahedral C-N bonds, with a few C-N bonds. From UV-Vis absorption spectrum, we found that during near-ultraviolet area the deposited CN x films appeared nonlinear optical absorption phenomena, and the ultraviolet light (200-280 nm) could be transmitted. The electrical resistivities of the films were in the range of 10 12 -10 16 Ω cm

  4. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

    2008-06-21

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

  5. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    International Nuclear Information System (INIS)

    Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

    2008-01-01

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

  6. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

    Directory of Open Access Journals (Sweden)

    Imas Noviyana

    2017-06-01

    Full Text Available Top-contact bottom-gate thin film transistors (TFTs with zinc-rich indium zinc tin oxide (IZTO active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.

  7. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  8. Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

    Science.gov (United States)

    Patra, Chandralina; Das, Debajyoti

    2018-04-01

    Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

  9. High throughput soft embossing process for micro-patterning of PEDOT thin films

    DEFF Research Database (Denmark)

    Fanzio, Paola; Cagliani, Alberto; Peterffy, Kristof G.

    2017-01-01

    The patterning of conductive polymers is a major challenge in the implementation of these materials in several research and industrial applications, spanning from photovoltaics to biosensors. Within this context, we have developed a reliable technique to pattern a thin layer of the conductive...... polymer poly(3,4-ethylenedioxythiophene) (PEDOT) by means of a low cost and high throughput soft embossing process. We were able to reproduce a functional conductive pattern with a minimum dimension of 1 μm and to fabricate electrically decoupled electrodes. Moreover, the conductivity of the PEDOT films...... has been characterized, finding that a post-processing treatment with Ethylene Glycol allows an increase in conductivity and a decrease in water solubility of the PEDOT film. Finally, cyclic voltammetry demonstrates that the post-treatment also ensures the electrochemical activity of the film. Our...

  10. Using high thermal stability flexible thin film thermoelectric generator at moderate temperature

    Science.gov (United States)

    Zheng, Zhuang-Hao; Luo, Jing-Ting; Chen, Tian-Bao; Zhang, Xiang-Hua; Liang, Guang-Xing; Fan, Ping

    2018-04-01

    Flexible thin film thermoelectric devices are extensively used in the microscale industry for powering wearable electronics. In this study, comprehensive optimization was conducted in materials and connection design for fabricating a high thermal stability flexible thin film thermoelectric generator. First, the thin films in the generator, including the electrodes, were prepared by magnetron sputtering deposition. The "NiCu-Cu-NiCu" multilayer electrode structure was applied to ensure the thermal stability of the device used at moderate temperature in an air atmosphere. A design with metal layer bonding and series accordant connection was then employed. The maximum efficiency of a single PN thermocouple generator is >11%, and the output power loss of the generator is <10% after integration.

  11. Micro-machined high-frequency (80 MHz) PZT thick film linear arrays.

    Science.gov (United States)

    Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K

    2010-10-01

    This paper presents the development of a micromachined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT sol-gel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (-6 dB) of 60%. An insertion loss of -41 dB and adjacent element crosstalk of -21 dB were found at the center frequency.

  12. Synthesis of nanoscale copper nitride thin film and modification of the surface under high electronic excitation.

    Science.gov (United States)

    Ghosh, S; Tripathi, A; Ganesan, V; Avasthi, D K

    2008-05-01

    Nanoscale (approximately 90 nm) Copper nitride (Cu3N) films are deposited on borosilicate glass and Si substrates by RF sputtering technique in the reactive environment of nitrogen gas. These films are irradiated with 200 MeV Au15+ ions from Pelletron accelerator in order to modify the surface by high electronic energy deposition of heavy ions. Due to irradiation (i) at incident ion fluence of 1 x 10(12) ions/cm2 enhancement of grains, (ii) at 5 x 10912) ions/cm2 mass transport on the films surface, (iii) at 2 x 10(13) ions/cm2 line-like features on Cu3N/glass and nanometallic structures on Cu3N/Si surface are observed. The surface morphology is examined by atomic force microscope (AFM). All results are explained on the basis of a thermal spike model of ion-solid interaction.

  13. Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

    Science.gov (United States)

    Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

    1994-01-01

    The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

  14. Large-sized and highly radioactive 3H and 109Cd Langmuir-Blodgett films

    International Nuclear Information System (INIS)

    Shibata, S.; Kawakami, H.; Kato, S.

    1994-02-01

    A device for the deposition of a radioactive Langmuir-Blodgett (LB) film was developed with the use of: (1) a modified horizontal lifting method, (2) an extremely shallow trough, and (3) a surface pressure-generating system without piston oil. It made a precious radioactive subphase solution repeatedly usable while keeping its radioactivity concentration as high as possible. Any large-size thin films can be prepared by just changing the trough size. Two monomolecular-layers of Y-type films of cadmium [ 3 H] icosanoate and 109 Cd icosanoate were built up as 3 H and 109 Cd β-sources for electron spectroscopy with intensities of 1.5 GBq (40 mCi) and 7.4 MBq (200 μCi), respectively, and a size of 65x200 mm 2 . Excellent uniformity of the distribution of deposited radioactivity was confirmed by autoradiography and photometry. (author)

  15. High-performance ferroelectric memory based on phase-separated films of polymer blends

    KAUST Repository

    Khan, Yasser; Bhansali, Unnat Sampatraj; Almadhoun, Mahmoud N.; Odeh, Ihab N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. High-performance ferroelectric memory based on phase-separated films of polymer blends

    KAUST Repository

    Khan, Yasser

    2013-10-29

    High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Preparation of high-content hexagonal boron nitride composite film and characterization of atomic oxygen erosion resistance

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu; Li, Min; Gu, Yizhuo; Wang, Shaokai, E-mail: wsk@buaa.edu.cn; Zhang, Zuoguang

    2017-04-30

    Highlights: • Hexagonal boron nitride nanosheets can be well exfoliated with the help of nanofibrillated cellulose. • A carpet-like rough surface and distortion in crystal structure of h-BN are found in both h-BN film and h-BN/epoxy film after AO exposure. • H-BN/epoxy film exhibits a higher mass loss and erosion yield, different element content changes and chemical oxidations compared with h-BN film. - Abstract: Space aircrafts circling in low earth orbit are suffered from highly reactive atomic oxygen (AO). To shield AO, a flexible thin film with 80 wt.% hexagonal boron nitride (h-BN) and h-BN/epoxy film were fabricated through vacuum filtration and adding nanofibrillated cellulose fibers. H-BN nanosheets were hydroxylated for enhancing interaction in the films. Mass loss and erosion yield at accumulated AO fluence about 3.04 × 10{sup 20} atoms/cm{sup 2} were adopted to evaluate the AO resistance properties of the films. A carpet-like rough surface, chemical oxidations and change in crystal structure of h-BN were found after AO treatment, and the degrading mechanism was proposed. The mass loss and erosion yield under AO attack were compared between h-BN film and h-BN/epoxy film, and the comparison was also done for various types of shielding AO materials. Excellent AO resistance property of h-BN film is shown, and the reasons are analyzed.

  18. Across plane ionic conductivity of highly oriented neodymium doped ceria thin films.

    Science.gov (United States)

    Baure, G; Kasse, R M; Rudawski, N G; Nino, J C

    2015-05-14

    A methodology to limit interfacial effects in thin films is proposed and explained. The strategy is to reduce the impact of the electrode interfaces and eliminate cross grain boundaries that impede ionic motion. To this end, highly oriented Nd0.1Ce0.9O2-δ (NDC) nanocrystalline thin films were grown using pulsed laser deposition (PLD) on platinized single crystal a-plane sapphire substrates. High resolution cross-sectional transmission electron microscopy (HR-XTEM), scanning electron microscopy (SEM) and X-ray diffraction (XRD) verified the films were textured with columnar grains. The average widths of the columns were approximately 40 nm and not significantly changed by film thickness between 100 and 300 nm. HR-XTEM and XRD determined the {111} planes of NDC were grown preferentially on top of the {111} planes of platinum despite the large lattice mismatch between the two planes. From the XRD patterns, the out of plane strains on the platinum and NDC layers were less than 1%. This can be explained by the coincident site lattice (CSL) theory. Rotating the {111} ceria planes 19.11° with respect to the {111} platinum planes forms a Σ7 boundary where 1 in 7 cerium lattice sites are coincident with the platinum lattice sites. This orientation lowers interfacial energy promoting the preferential alignment of those two planes. The across plane ionic conductivity was measured at low temperatures (<350 °C) for the various film thicknesses. It is here shown that columnar grain growth of ceria can be induced on platinized substrates allowing pathways that are clear of blocking grain boundaries that cause conductivities to diminish as film thickness decreases.

  19. Universal Scaling in Highly Doped Conducting Polymer Films

    NARCIS (Netherlands)

    Kronemeijer, A. J.; Huisman, E. H.; Katsouras, I.; van Hal, P. A.; Geuns, T. C. T.; Blom, P. W. M.; van der Molen, S. J.; de Leeuw, D. M.

    2010-01-01

    Electrical transport of a highly doped disordered conducting polymer, viz. poly-3,4-ethylenedioxythiophene stabilized with poly-4-styrenesulphonic acid, is investigated as a function of bias and temperature. The transport shows universal power-law scaling with both bias and temperature. All

  20. Universal scaling in highly doped conducting polymer films

    NARCIS (Netherlands)

    Kronemeijer, A.J.; Huisman, E.H.; Katsouras, I.; Hal, P.A. van; Geuns, T.C.T.; Blom, P.W.M.; Molen, S.J. van der; Leeuw, D.M. de

    2010-01-01

    Electrical transport of a highly doped disordered conducting polymer, viz. poly-3,4-ethylenedioxythiophene stabilized with poly-4-styrenesulphonic acid, is investigated as a function of bias and temperature. The transport shows universal power-law scaling with both bias and temperature. All

  1. Patterned magnetic thin films for ultra high density recording

    NARCIS (Netherlands)

    Haast, M.A.M.

    This thesis describes the results of a research project in the field of high bit-density data-storage media. More specifically, the material aspects of the novel recording technique using patterned media have been studied. The aim of the work was the design, realization and characterization of such

  2. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  3. Thick-Film and LTCC Passive Components for High-Temperature Electronics

    Directory of Open Access Journals (Sweden)

    A. Dziedzic

    2013-04-01

    Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

  4. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  5. High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films

    Directory of Open Access Journals (Sweden)

    Miguel Muñoz Rojo

    2015-08-01

    Full Text Available The out of plane electrical conductivity of highly anisotropic Bi2Te3 films grown via electro-deposition process was determined using four probe current-voltage measurements performed on 4.6 - 7.2 μm thickness Bi2Te3 mesa structures with 80 - 120 μm diameters sandwiched between metallic film electrodes. A three-dimensional finite element model was used to predict the electric field distribution in the measured structures and take into account the non-uniform distribution of the current in the electrodes in the vicinity of the probes. The finite-element modeling shows that significant errors could arise in the measured film electrical conductivity if simpler one-dimensional models are employed. A high electrical conductivity of (3.2 ± 0.4 ⋅ 105 S/m is reported along the out of plane direction for Bi2Te3 films highly oriented in the [1 1 0] direction.

  6. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  7. Study of sodium film-boiling heat transfer from a high-temperature sphere

    International Nuclear Information System (INIS)

    Le-Belguet, A.

    2013-01-01

    During a severe accident in a sodium-cooled fast reactor, molten fuel may come into contact with the surrounding liquid sodium, resulting in a so-called Fuel-Coolant Interaction. This work aims at providing a better understanding and knowledge of the associated heat transfer, likely to be in the film-boiling regime and required to study the risks related to a vapor explosion. Scarce literature has been found on sodium film boiling, both from an experimental and a theoretical point of view. Only one experiment has been conducted to investigate sodium pool film-boiling heat transfer. In our analysis of the experiment, two film-boiling regimes have been identified: a stable film boiling regime, without liquid-solid contact, and an unstable film-boiling regime, with contacts. Besides, the only theoretical model dedicated to sodium film boiling has shown some weaknesses. First, a scaling analysis of the problem has been proposed for free and forced convection, considering the two extreme cases of saturated and highly subcooled liquid. This simplified approach, which shows a good agreement with the experimental data, provides the dimensionless numbers which should be used to build correlations. A theoretical model has been developed to describe sodium film-boiling heat transfer from a hot sphere in free and forced convection, whatever the liquid subcooling. It is based on a two-phase laminar boundary layer integral method and includes the inertial and convective terms in the vapor momentum and energy equations, usually neglected. The radiation has been taken into account in the interfacial energy balance and contributes directly to produce vapor. This model enables to predict the heat lost from a hot body within an acceptable error compared to the tests results especially when the experimental uncertainties are considered. The heat partition between liquid heating and vaporization, essential to study the vapor explosion phenomenon, is also estimated. The influence of

  8. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  9. High-resolution ellipsometric study of an n-alkane film, dotriacontane, adsorbed on a SiO2 surface

    DEFF Research Database (Denmark)

    Volkmann, U.G.; Pino, M.; Altamirano, L.A.

    2002-01-01

    -crystal substrates. Our results suggest a model of a solid dotriacontane film that has a phase closest to the SiO2 surface in which the long-axis of the molecules is oriented parallel to the interface. Above this "parallel film" phase, a solid monolayer adsorbs in which the molecules are oriented perpendicular...... at higher coverages. In addition, we have performed high-resolution ellipsometry and stray-light measurements on dotriacontane films deposited from solution onto highly oriented pyrolytic graphite substrates. After film deposition, these substrates proved to be less stable in air than SiO2....

  10. Preparation and Characterization of High Temperature Superconductor Film Surfaces

    Science.gov (United States)

    1993-10-27

    Lanthanum Strontium Copper Oxide (LSCO) was also tested as a normal metal overlayer because of its compatibility with the high deposition temperature for...fabricate YBCO/ISCO SEB junctions using a variety of step heights (110 nm - 330 nm) on Neodymium Gallate (NGO) substrates. NGO was chosen as a...substrate because of its excellent lattice match to YBCO and its lack of crystal twinning Twinning had been a drawback of Lanthanum Aluminate (LAO)- L

  11. High Temperature Superconducting Films and Multilayers for Electronics

    Science.gov (United States)

    1994-04-19

    Vol. 1292 (1990). U Chisholm, A. Gupta, S. Shinde and R.B. Bnidges. GAN. Connell and 1B. Boyce, Laibowitz, " Lanthanum Gallate Sub- "Properties of...aluminate or gallate ..._.........102 24 - 2:2:4:5 structure ........................ 115 IN - Interface reactions ............ 93 #M - MgO substrates...Draper with the measure- High-Tc Superconductors,’ Physica C. on Lanthanum Aluminate Subsbates." in ments of surface resistance; T.T. Vol. 153-155,19M8 pp

  12. Classification of fMRI independent components using IC-fingerprints and support vector machine classifiers.

    Science.gov (United States)

    De Martino, Federico; Gentile, Francesco; Esposito, Fabrizio; Balsi, Marco; Di Salle, Francesco; Goebel, Rainer; Formisano, Elia

    2007-01-01

    We present a general method for the classification of independent components (ICs) extracted from functional MRI (fMRI) data sets. The method consists of two steps. In the first step, each fMRI-IC is associated with an IC-fingerprint, i.e., a representation of the component in a multidimensional space of parameters. These parameters are post hoc estimates of global properties of the ICs and are largely independent of a specific experimental design and stimulus timing. In the second step a machine learning algorithm automatically separates the IC-fingerprints into six general classes after preliminary training performed on a small subset of expert-labeled components. We illustrate this approach in a multisubject fMRI study employing visual structure-from-motion stimuli encoding faces and control random shapes. We show that: (1) IC-fingerprints are a valuable tool for the inspection, characterization and selection of fMRI-ICs and (2) automatic classifications of fMRI-ICs in new subjects present a high correspondence with those obtained by expert visual inspection of the components. Importantly, our classification procedure highlights several neurophysiologically interesting processes. The most intriguing of which is reflected, with high intra- and inter-subject reproducibility, in one IC exhibiting a transiently task-related activation in the 'face' region of the primary sensorimotor cortex. This suggests that in addition to or as part of the mirror system, somatotopic regions of the sensorimotor cortex are involved in disambiguating the perception of a moving body part. Finally, we show that the same classification algorithm can be successfully applied, without re-training, to fMRI collected using acquisition parameters, stimulation modality and timing considerably different from those used for training.

  13. Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

    KAUST Repository

    Yue, Wan

    2016-09-28

    Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

  14. Flexible Ultrahigh-Temperature Polymer-Based Dielectrics with High Permittivity for Film Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Zejun Pu

    2017-11-01

    Full Text Available In this report, flexible cross-linked polyarylene ether nitrile/functionalized barium titanate(CPEN/F-BaTiO3 dielectrics films with high permittivitywere prepared and characterized. The effects of both the F-BaTiO3 and matrix curing on the mechanical, thermal and dielectric properties of the CPEN/F-BaTiO3 dielectric films were investigated in detail. Compared to pristine BaTiO3, the surface modified BaTiO3 particles effectively improved their dispersibility and interfacial adhesion in the polymer matrix. Moreover, the introduction of F-BaTiO3 particles enhanced dielectric properties of the composites, with a relatively high permittivity of 15.2 and a quite low loss tangent of 0.022 (1 kHz when particle contents of 40 wt % were utilized. In addition, the cyano (–CN groups of functional layer also can serve as potential sites for cross-linking with polyarylene ether nitrile terminated phthalonitrile (PEN-Ph matrix and make it transform from thermoplastic to thermosetting. Comparing with the pure PEN-ph film, the latter results indicated that the formation of cross-linked network in the polymer-based system resulted in increased tensile strength by ~67%, improved glass transition temperature (Tg by ~190 °C. More importantly, the CPEN/F-BaTiO3 composite films filled with 30 wt % F-BaTiO3 particles showed greater energy density by nearly 190% when compared to pure CPEN film. These findings enable broader applications of PEN-based composites in high-performance electronics and energy storage devices materials used at high temperature.

  15. PDC IC WELD FAILURE EVALUATION AND RESOLUTION

    Energy Technology Data Exchange (ETDEWEB)

    Korinko, P.; Howard, S.; Maxwell, D.; Fiscus, J.

    2012-04-16

    During final preparations for start of the PDCF Inner Can (IC) qualification effort, welding was performed on an automated weld system known as the PICN. During the initial weld, using a pedigree canister and plug, a weld defect was observed. The defect resulted in a hole in the sidewall of the canister, and it was observed that the plug sidewall had not been consumed. This was a new type of failure not seen during development and production of legacy Bagless Transfer Cans (FB-Line/Hanford). Therefore, a team was assembled to determine the root cause and to determine if the process could be improved. After several brain storming sessions (MS and T, R and D Engineering, PDC Project), an evaluation matrix was established to direct this effort. The matrix identified numerous activities that could be taken and then prioritized those activities. This effort was limited by both time and resources (the number of canisters and plugs available for testing was limited). A discovery process was initiated to evaluate the Vendor's IC fabrication process relative to legacy processes. There were no significant findings, however, some information regarding forging/anneal processes could not be obtained. Evaluations were conducted to compare mechanical properties of the PDC canisters relative to the legacy canisters. Some differences were identified, but mechanical properties were determined to be consistent with legacy materials. A number of process changes were also evaluated. A heat treatment procedure was established that could reduce the magnetic characteristics to levels similar to the legacy materials. An in-situ arc annealing process was developed that resulted in improved weld characteristics for test articles. Also several tack welds configurations were addressed, it was found that increasing the number of tack welds (and changing the sequence) resulted in decreased can to plug gaps and a more stable weld for test articles. Incorporating all of the process

  16. Electron Storage Ring Development for ICS Sources

    Energy Technology Data Exchange (ETDEWEB)

    Loewen, Roderick [Lyncean Technologies, Inc., Palo Alto, CA (United States)

    2015-09-30

    There is an increasing world-wide interest in compact light sources based on Inverse Compton Scattering. Development of these types of light sources includes leveraging the investment in accelerator technology first developed at DOE National Laboratories. Although these types of light sources cannot replace the larger user-supported synchrotron facilities, they offer attractive alternatives for many x-ray science applications. Fundamental research at the SLAC National Laboratory in the 1990’s led to the idea of using laser-electron storage rings as a mechanism to generate x-rays with many properties of the larger synchrotron light facilities. This research led to a commercial spin-off of this technology. The SBIR project goal is to understand and improve the performance of the electron storage ring system of the commercially available Compact Light Source. The knowledge gained from studying a low-energy electron storage ring may also benefit other Inverse Compton Scattering (ICS) source development. Better electron storage ring performance is one of the key technologies necessary to extend the utility and breadth of applications of the CLS or related ICS sources. This grant includes a subcontract with SLAC for technical personnel and resources for modeling, feedback development, and related accelerator physics studies.

  17. High-Performance Screen-Printed Thermoelectric Films on Fabrics.

    Science.gov (United States)

    Shin, Sunmi; Kumar, Rajan; Roh, Jong Wook; Ko, Dong-Su; Kim, Hyun-Sik; Kim, Sang Il; Yin, Lu; Schlossberg, Sarah M; Cui, Shuang; You, Jung-Min; Kwon, Soonshin; Zheng, Jianlin; Wang, Joseph; Chen, Renkun

    2017-08-04

    Printing techniques could offer a scalable approach to fabricate thermoelectric (TE) devices on flexible substrates for power generation used in wearable devices and personalized thermo-regulation. However, typical printing processes need a large concentration of binder additives, which often render a detrimental effect on electrical transport of the printed TE layers. Here, we report scalable screen-printing of TE layers on flexible fiber glass fabrics, by rationally optimizing the printing inks consisting of TE particles (p-type Bi 0.5 Sb 1.5 Te 3 or n-type Bi 2 Te 2.7 Se 0.3 ), binders, and organic solvents. We identified a suitable binder additive, methyl cellulose, which offers suitable viscosity for printability at a very small concentration (0.45-0.60 wt.%), thus minimizing its negative impact on electrical transport. Following printing, the binders were subsequently burnt off via sintering and hot pressing. We found that the nanoscale defects left behind after the binder burnt off became effective phonon scattering centers, leading to low lattice thermal conductivity in the printed n-type material. With the high electrical conductivity and low thermal conductivity, the screen-printed TE layers showed high room-temperature ZT values of 0.65 and 0.81 for p-type and n-type, respectively.

  18. Conceptualising Intellectual Capital (IC) as Language Game and Power

    DEFF Research Database (Denmark)

    Jørgensen, Kenneth Mølbjerg

    2006-01-01

    Intellectual Capital (IC) can be viewed as knowledge about knowledge, knowledge creation and how such processes might be leveraged into value. Developing a critical understanding of IC requires a historical and contextual understanding of how IC has emerged and how IC is used. This paper, drawing...... this process of social construction. The paper concludes by proposing some methodological guidelines for conducting critical genealogical research on intellectual capital....

  19. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

  20. Deposition of high Tc superconductor thin films by pulsed excimer laser ablation and their post-synthesis processing

    International Nuclear Information System (INIS)

    Ogale, S.B.

    1992-01-01

    This paper describes the use of pulsed excimer laser ablation technique for deposition of high quality superconductor thin films on different substrate materials such as Y stabilized ZrO 2 , SrTiO 3 , LiNbO 3 , Silicon and Stainless Steels, and dopant incorporation during the film depositions. Processing of deposited films using ion and laser beams for realisation of device features are presented. 28 refs., 16 figs

  1. Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp.

    Science.gov (United States)

    Seong, Kieun; Kim, Kyongjun; Park, Si Yun; Kim, Youn Sang

    2013-04-07

    Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.

  2. Integration of IC/EC systems in ITER

    International Nuclear Information System (INIS)

    Gassmann, T.; Beaumont, B.; Baruah, U.K.; Bonicelli, T.; Chiocchio, S.; Cox, D.; Darbos, C.; Decamps, H.; Denisov, G.; Henderson, M.; Kazarian, F.; Lamalle, P.U.; Mukherjee, A.; Rasmussen, D.; Saibene, G.; Sartori, R.; Sakamoto, K.; Tanga, A.

    2010-01-01

    The RF heating and current drive (H and CD) systems that are to be installed in ITER during the construction phase, are the electron cyclotron (EC) and ion cyclotron (IC) systems. They are complex assemblies of high voltage power supplies (HVPS), RF generators, transmission lines and antennas. Their design and integration are constrained by many interfaces, both internal, between the subsystems, and external, with the other ITER systems. In addition, some components must be compatible with a nuclear environment and are classified as Safety Important Component. This paper describes the processes implemented in ITER to ensure proper integration.

  3. Characterization of CBD grown ZnO films with high c-axis orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kahraman, S., E-mail: suleymanmku@gmail.com [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey); Bayansal, F.; Cetinkara, H.A.; Cakmak, H.M.; Gueder, H.S. [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey)

    2012-06-15

    Highly c-axis oriented ZnO films were deposited on seeded glass substrates. Successive ionic layer adsorption and reaction (SILAR) method and chemical bath deposition (CBD) method were used to obtain seed layers and ZnO films. To see the effects of seed layer and deposition time, structural (e.g. grain size, microstrain and dislocation density), morphological, and electrical (e.g. resistivity, activation energy) properties of the films were investigated by scanning electron microscopy, X-ray diffraction, and four point probe method. From the SEM images, resultant structures were found as well defined nanorods nearly perpendicular to the substrate surfaces and densely cover the substrates. The XRD patterns showed that ZnO films have hexagonal wurtzite structure with a preferred c-axis orientation along (002) plane. C-axis orientation was also supported by texture coefficient calculations. The lattice parameters of the structures were determined as a = 3.2268 A, b = 5.2745 A, {alpha} = {beta} = 90 Degree-Sign and {gamma} = 120 Degree-Sign . From the XRD patterns, it was revealed that, microstrain and dislocation density values of the structures decreased whereas grain size increased. This was attributed to enhancement occurred in lattice structure of the ZnO films. Activation energy values of the films were found in between 0.12 and 0.15 eV from the dark electrical resistivity-temperature characteristics in a temperature range of 300-500 K. - Highlights: Black-Right-Pointing-Pointer Hexagonal wurtzite structured ZnO nanorods (preferred orientation along (002) plane). Black-Right-Pointing-Pointer Electrical activation energies were calculated in between 0.12 and 0.15 eV. Black-Right-Pointing-Pointer Microstrain and dislocation density decreased with increasing deposition time. Black-Right-Pointing-Pointer Increasing deposition time was resulted in an increase in preferred orientation.

  4. Orientation and thickness dependence of magnetization at the interfacesof highly spin-polarized manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chopdekar, Rajesh V.; Arenholz, Elke; Suzuki, Y.

    2008-08-18

    We have probed the nature of magnetism at the surface of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films. The spin polarization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films is not intrinsically suppressed at all surfaces and interfaces but is highly sensitive to both the epitaxial strain state as well as the substrate orientation. Through the use of soft x-ray spectroscopy, the magnetic properties of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces have been investigated and compared to bulk magnetometry and resistivity measurements. The magnetization of (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces are more bulk-like as a function of thickness whereas the magnetization at the (001)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interface is suppressed significantly below a layer thickness of 20 nm. Such findings are correlated with the biaxial strain state of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films; for a given film thickness it is the tetragonal distortion of (001) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} that severely impacts the magnetization, whereas the trigonal distortion for (111)-oriented films and monoclinic distortion for (110)-oriented films have less of an impact. These observations provide evidence that surface magnetization and thus spin polarization depends strongly on the crystal surface orientation as well as epitaxial strain.

  5. A simple two-step method to fabricate highly transparent ITO/polymer nanocomposite films

    International Nuclear Information System (INIS)

    Liu, Haitao; Zeng, Xiaofei; Kong, Xiangrong; Bian, Shuguang; Chen, Jianfeng

    2012-01-01

    Highlights: ► A simple two-step method without further surface modification step was employed. ► ITO nanoparticles were easily to be uniformly dispersed in polymer matrix. ► ITO/polymer nanocomposite film had high transparency and UV/IR blocking properties. - Abstract: Transparent functional indium tin oxide (ITO)/polymer nanocomposite films were fabricated via a simple approach with two steps. Firstly, the functional monodisperse ITO nanoparticles were synthesized via a facile nonaqueous solvothermal method using bifunctional chemical agent (N-methyl-pyrrolidone, NMP) as the reaction solvent and surface modifier. Secondly, the ITO/acrylics polyurethane (PUA) nanocomposite films were fabricated by a simple sol-solution mixing method without any further surface modification step as often employed traditionally. Flower-like ITO nanoclusters with about 45 nm in diameter were mono-dispersed in ethyl acetate and each nanocluster was assembled by nearly spherical nanoparticles with primary size of 7–9 nm in diameter. The ITO nanoclusters exhibited an excellent dispersibility in polymer matrix of PUA, remaining their original size without any further agglomeration. When the loading content of ITO nanoclusters reached to 5 wt%, the transparent functional nanocomposite film featured a high transparency more than 85% in the visible light region (at 550 nm), meanwhile cutting off near-infrared radiation about 50% at 1500 nm and blocking UV ray about 45% at 350 nm. It could be potential for transparent functional coating materials applications.

  6. Effects of target bias voltage on indium tin oxide films deposited by high target utilisation sputtering

    International Nuclear Information System (INIS)

    Calnan, Sonya; Upadhyaya, Hari M.; Dann, Sandra E.; Thwaites, Mike J.; Tiwari, Ayodhya N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited by reactive High Target Utilisation Sputtering (HiTUS) onto glass and polyimide substrates. The ion plasma was generated by an RF power source while the target bias voltage was varied from 300 V to 500 V using a separate DC power supply. The deposition rate, at constant target power, increased with DC target voltage due to increased ion energy reaching 34 nm/min at 500 V. All the films were polycrystalline and showed strong (400) and (222) reflections with the relative strength of latter increasing with target bias voltage. The resistivity was lowest at 500 V with values of 1.8 x 10 -4 Ω cm and 2.4 x 10 -4 Ω cm on glass and polyimide, respectively but was still less than 5 x 10 -4 Ω cm at 400 V. All films were highly transparent to visible light, (> 80%) but the NIR transmittance decreased with increasing target voltage due to higher free carrier absorption. Therefore, ITO films can be deposited onto semiconductor layers such as in solar cells, with minimal ion damage while maintaining low resistivity

  7. Efficient analysis for nonlinear microwave characteristics of high-power HTS thin film microstrip resonators

    Energy Technology Data Exchange (ETDEWEB)

    Kedar, Ashutosh [RADL Division, Electronics and Radar Development Establishment, C V Raman Nagar, Bangalore-560093 (India); Kataria, N D [National Physical Laboratory, New Delhi (India)

    2005-08-01

    This paper investigates the nonlinear effects of high-T{sub c} superconducting (HTS) thin film in high-power applications. A nonlinear model for complex surface impedance has been proposed for the efficient analysis of the nonlinearity of HTS thin films. Further, using the developed model, analysis of HTS-MSR has been done using the spectral domain method (SDM). The SDM formulation has been modified to account for finite conductivity and thickness of HTS films by incorporating a complex resistive boundary condition. The results have been validated with the experiments performed with microstrip resonators (MSRs) based on YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) thin films made by a laser ablation technique on LaAlO{sub 3} substrates, characterized for their characteristics, namely, resonant frequency and quality factor measured as a function of temperature and input RF power. A close agreement between the theoretical and measured results has been achieved validating the analysis.

  8. The response of film badge dosemeters to high energy photon radiation

    International Nuclear Information System (INIS)

    Playle, T.S.

    1988-12-01

    The sites of the earlier magnox reactor power stations at Berkeley and Bradwell in the United Kingdom are subject to 6 MeV photon radiation from the coolant gas. Since 1966 the Central Electricity Generating Board has included in its film badge personal dosimetry procedures an algorithm for applying a correction for over-response to high energy photon radiation. The correction is based on laboratory irradiations using a source of pure 6 MeV photon radiation. Recently, the opportunity arose to evaluate the response of the film badges at locations around the Berkeley reactors where spectrum-dependent dose equivalent rates had been measured. This report compares the response of the film badge in these characterised radiation environments with the response measured in the calibration laboratory. It is concluded that in the location where measurements were made, the high energy enhancement of measured dose was obscured by the effects of low energy scattered radiation, and it is considered that this will be the case for all practical situations on the power station site. There is therefore no advantage in using the 6 MeV correction factors for routine film badge dosimetry in these locations. (author)

  9. Highly Sensitive Nanostructured SnO2 Thin Films For Hydrogen Sensing

    Science.gov (United States)

    Patil, L. A.; Shinde, M. D.; Bari, A. R.; Deo, V. V.

    2010-10-01

    Nanostructured SnO2 thin films were prepared by ultrasonic spray pyrolysis technique. Aqueous solution (0.05 M) of SnCl4ṡ5H2O in double distilled water was chosen as the starting solution for the preparation of the films. The stock solution was delivered to nozzle with constant and uniform flow rate of 70 ml/h by Syringe pump SK5001. Sono-tek spray nozzle, driven by ultrasonic frequency of 120 kHz, converts the solution into fine spray. The aerosol produced by nozzle was sprayed on glass substrate heated at 150 °C. The sensing performance of the films was tested for various gases such as LPG, hydrogen, ethanol, carbon dioxide and ammonia. The sensor (30 min) showed high gas response (S = 3040 at 350 °C) on exposure of 1000 ppm of hydrogen and high selectivity against other gases. Its response time was short (2 s) and recovery was also fast (12 s). To understand reasons behind this uncommon gas sensing performance of the films, their structural, microstructural, and optical properties were studied using X-ray diffraction, electron microscopy (SEM and TEM) respectively. The results are interpreted

  10. Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

    2016-05-01

    In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

  11. High-quality substrate for fluorescence enhancement using agarose-coated silica opal film.

    Science.gov (United States)

    Xu, Ming; Li, Juan; Sun, Liguo; Zhao, Yuanjin; Xie, Zhuoying; Lv, Linli; Zhao, Xiangwei; Xiao, Pengfeng; Hu, Jing; Lv, Mei; Gu, Zhongze

    2010-08-01

    To improve the sensitivity of fluorescence detection in biochip, a new kind of substrates was developed by agarose coating on silica opal film. In this study, silica opal film was fabricated on glass substrate using the vertical deposition technique. It can provide stronger fluorescence signals and thus improve the detection sensitivity. After coating with agarose, the hybrid film could provide a 3D support for immobilizing sample. Comparing with agarose-coated glass substrate, the agarose-coated opal substrates could selectively enhance particular fluorescence signals with high sensitivity when the stop band of the silica opal film in the agarose-coated opal substrate overlapped the fluorescence emission wavelength. A DNA hybridization experiment demonstrated that fluorescence intensity of special type of agarose-coated opal substrates was about four times that of agarose-coated glass substrate. These results indicate that the optimized agarose-coated opal substrate can be used for improving the sensitivity of fluorescence detection with high quality and selectivity.

  12. Resputtering-induced chemical inhomogeneity during the growth of high Tc superconductor thin films

    International Nuclear Information System (INIS)

    Ismat Shah, S.

    1991-01-01

    High T c films belonging to Y-Ba-Cu-O, Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O systems have been fabricated by reactive sputtering of single targets in a planar magnetron and Ar+O 2 sputtering atmosphere. Although it was possible to deposit films of correct composition, resputtering related composition variation was a problem. The key to obtaining correct chemistry was a proper control of the deposition parameters. The pressure and oxygen content of the sputtering gas were found to be the most critical parameters. Results of the variation of these parameters on the cation chemistry are presented in this paper. Results from Monte-Carlo simulation of the sputtering process are also presented showing that low pressure and oxygen content of the sputtering gas result in a higher yield of energetic reflected neutrals which can cause compositional variation in the film mainly due to preferential sputtering of the growing film. The effect was particularly noticeable directly underneath the target. The energetic particle bombardment can be controlled by using moderately high pressures and low oxygen concentration in the gas. (author). 11 refs., 7 figs

  13. Electrode patterning of ITO thin films by high repetition rate fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Lin, H.K., E-mail: HKLin@mail.npust.edu.tw; Hsu, W.C.

    2014-07-01

    Indium tin oxide (ITO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering system. As-deposited ITO thin film was 100 nm in thickness and a transmittance of ITO film on glass substrate was 79% at 550 nm. Conductive electrodes are then patterned on the ITO films using a high repetition rate fiber laser system followed by a wet chemical etching process. The electrical, optical and structural properties of the patterned samples are evaluated by means of a four-point probe technique, spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that the samples annealed with a pulse repetition rate of 150 kHz or 400 kHz have a low sheet resistivity of 21 Ω/□ and a high optical transmittance of 90%. In addition, it is shown that a higher pulse repetition rate reduces both the residual stress and the surface roughness of the patterned specimens. Therefore, the present results suggest that a pulse repetition rate of 400 kHz represents the optimal processing condition for the patterning of crack-free ITO-coated glass substrates with good electrical and optical properties.

  14. Study of high coercive force films made by vacuum deposition of cobalt onto chromium

    International Nuclear Information System (INIS)

    Randet, Denis

    1969-01-01

    A new method to make high coercive force films, by successive evaporations of chromium and cobalt, was demonstrated in 1966 at the 'Laboratoire d'Electronique et de Technologie de l'Informatique'. This work first contains a description of the magnetic properties of these films according to the conditions of preparation. These properties, which are isotropic in the plane of the film, are then related to the crystallographic structure of chromium and cobalt, in particular through electron microscopy. It is concluded that the coercive force is essentially due to the high magneto-crystalline anisotropy of cobalt in its hexagonal phase and depends, altogether with the shape of the hysteresis loop, on the magnetostatic coupling between the grains, which varies according to their dimensions. The chromium underlayer, if its surface is free enough of oxygen contamination, induces the growth of the hexagonal phase and influences the grain size of cobalt by a sort of epitaxy. At last, the behaviour of the Co/Cr films as a magnetic recording material is briefly examined and discussed. (author) [fr

  15. Crystallization and segregation in vitreous rutile films annealed at high temperature

    International Nuclear Information System (INIS)

    Omari, M.A.; Sorbello, R.S.; Aita, C.R.

    2005-01-01

    Vitreous titania films with rutile short-range order were sputter deposited on unheated fused silica substrates, sequentially annealed at 973 and 1273 K, and examined by Raman microscopy, scanning electron microscopy, and x-ray diffraction. A segregated microstructure developed after the 1273 K anneal. This microstructure consists of supermicron-size craters dispersed in a matrix of submicron rutile crystals. Ti-O short-range order in the craters is characteristic of a mixture of two high pressure phases, m-TiO 2 (monoclinic P2 1 /c space group) and α-TiO 2 (tetragonal Pbcn space group). We calculated that a high average compressive stress parallel to the substrate must be accommodated in the films at 1273 K, caused by the difference in the thermal expansion coefficients of titania and fused silica. The formation of the segregated microstructure is modeled by considering two processes at work at 1273 K to lower a film's internal energy: crystallization and nonuniform stress relief. The Gibbs-Thomson relation shows that small m-TiO 2 crystallites are able to form directly from vitreous TiO 2 at 1273 K. However, the preferred mechanism for forming α-TiO 2 is likely to be by epitaxial growth at crystalline rutile twin boundaries (secondary crystallization). Both phases are denser than crystalline rutile and reduce the average thermal stress in the films

  16. Electrode patterning of ITO thin films by high repetition rate fiber laser

    International Nuclear Information System (INIS)

    Lin, H.K.; Hsu, W.C.

    2014-01-01

    Indium tin oxide (ITO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering system. As-deposited ITO thin film was 100 nm in thickness and a transmittance of ITO film on glass substrate was 79% at 550 nm. Conductive electrodes are then patterned on the ITO films using a high repetition rate fiber laser system followed by a wet chemical etching process. The electrical, optical and structural properties of the patterned samples are evaluated by means of a four-point probe technique, spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show that the samples annealed with a pulse repetition rate of 150 kHz or 400 kHz have a low sheet resistivity of 21 Ω/□ and a high optical transmittance of 90%. In addition, it is shown that a higher pulse repetition rate reduces both the residual stress and the surface roughness of the patterned specimens. Therefore, the present results suggest that a pulse repetition rate of 400 kHz represents the optimal processing condition for the patterning of crack-free ITO-coated glass substrates with good electrical and optical properties.

  17. Condom Use and High-Risk Sexual Acts in Adult Films: A Comparison of Heterosexual and Homosexual Films

    Science.gov (United States)

    Elliott, Marc N.; Kerndt, Peter R.; Schuster, Mark A.; Brook, Robert H.; Gelberg, Lillian

    2009-01-01

    Objectives. We compared the prevalence of condom use during a variety of sexual acts portrayed in adult films produced for heterosexual and homosexual audiences to assess compliance with state Occupational Health and Safety Administration regulations. Methods. We analyzed 50 heterosexual and 50 male homosexual films released between August 1, 2005, and July 31, 2006, randomly selected from the distributor of 85% of the heterosexual adult films released each year in the United States. Results. Penile–vaginal intercourse was protected with condoms in 3% of heterosexual scenes. Penile–anal intercourse, common in both heterosexual (42%) and homosexual (80%) scenes, was much less likely to be protected with condoms in heterosexual than in homosexual scenes (10% vs 78%; P films. Conclusions. Heterosexual films were much less likely than were homosexual films to portray condom use, raising concerns about transmission of HIV and other sexually transmitted diseases, especially among performers in heterosexual adult films. In addition, the adult film industry, especially the heterosexual industry, is not adhering to state occupational safety regulations. PMID:19218178

  18. High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

    Science.gov (United States)

    Rajanikant, Ray Jayminkumar

    The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a

  19. Microstructure and high-temperature tribological properties of Si-doped hydrogenated diamond-like carbon films

    Science.gov (United States)

    Zhang, Teng Fei; Wan, Zhi Xin; Ding, Ji Cheng; Zhang, Shihong; Wang, Qi Min; Kim, Kwang Ho

    2018-03-01

    Si-doped DLC films have attracted great attention for use in tribological applications. However, their high-temperature tribological properties remain less investigated, especially in harsh oxidative working conditions. In this study, Si-doped hydrogenated DLC films with various Si content were synthesized and the effects of the addition of Si on the microstructural, mechanical and high-temperature tribological properties of the films were investigated. The results indicate that Si doping leads to an obvious increase in the sp3/sp2 ratio of DLC films, likely due to the silicon atoms preferentially substitute the sp2-hybridized carbon atoms and augment the number of sp3 sites. With Si doping, the mechanical properties, including hardness and adhesion strength, were improved, while the residual stress of the DLC films was reduced. The addition of Si leads to higher thermal and mechanical stability of DLC films because the Si atoms inhibit the graphitization of the films at an elevated temperature. Better high-temperature tribological properties of the Si-DLC films under oxidative conditions were observed, which can be attributed to the enhanced thermal stability and formation of a Si-containing lubricant layer on the surfaces of the wear tracks. The nano-wear resistance of the DLC films was also improved by Si doping.

  20. Novel texturing method for sputtered zinc oxide films prepared at high deposition rate from ceramic tube targets

    Directory of Open Access Journals (Sweden)

    Hüpkes J.

    2011-10-01

    Full Text Available Sputtered and wet-chemically texture etched zinc oxide (ZnO films on glass substrates are regularly applied as transparent front contact in silicon based thin film solar cells. In this study, chemical wet etching in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl on aluminum doped zinc oxide (ZnO:Al films deposited by magnetron sputtering from ceramic tube targets at high discharge power (~10 kW/m target length is investigated. Films with thickness of around 800 nm were etched in diluted HCl acid and HF acid to achieve rough surface textures. It is found that the etching of the films in both etchants leads to different surface textures. A two steps etching process, which is especially favorable for films prepared at high deposition rate, was systematically studied. By etching first in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl these films are furnished with a surface texture which is characterized by craters with typical diameter of around 500 − 1000 nm. The resulting surface structure is comparable to etched films sputtered at low deposition rate, which had been demonstrated to be able to achieve high efficiencies in silicon thin film solar cells.

  1. Films of chitin, chitosan and cellulose obtained from aqueous suspension treated by irradiation of high intensity ultrasound

    International Nuclear Information System (INIS)

    Almeida, Erika V.R.; Mariano, Mario S.; Campana-Filho, Sergio P.

    2011-01-01

    Films of chitin, chitin/chitosan and chitin/sisal cellulose were obtained by casting their aqueous suspensions previously treated with irradiation of high intensity ultrasound. The films were characterized for surface morphology by scanning electron microscopy and it is possible notice that the films containing chitosan are much more homogeneous. The thermal behavior of the films was evaluated by dynamic mechanical thermal analysis, differential scanning calorimetry, and thermogravimetric analysis and revealing similarity in comparison with the thermal behavior of polysaccharide isolated. The tensile strength was determined and the film containing chitosan showed the best result when compared to other films. The crystallinity index of the films analyzed by X-ray diffraction showed that the films are amorphous material. The analysis by infrared spectroscopy showed that treatment of aqueous suspensions of polysaccharides with irradiation of high intensity ultrasound did not change the chemical structure of polymers. The crystallinity index was determined by X-ray diffraction, revealing that the films are amorphous materials. The results of this study indicate the possibility of processing of chitin, chitosan and cellulose, polysaccharides whose solubilities are limited to a few solvent systems, by treating their aqueous suspensions with high intensity ultrasound. (author)

  2. Identification of signals that facilitate isoform specific nucleolar localization of myosin IC

    Energy Technology Data Exchange (ETDEWEB)

    Schwab, Ryan S.; Ihnatovych, Ivanna; Yunus, Sharifah Z.S.A.; Domaradzki, Tera [Department of Physiology and Biophysics, University at Buffalo—State University of New York, Buffalo, NY (United States); Hofmann, Wilma A., E-mail: whofmann@buffalo.edu [Department of Physiology and Biophysics, University at Buffalo—State University of New York, Buffalo, NY (United States)

    2013-05-01

    Myosin IC is a single headed member of the myosin superfamily that localizes to the cytoplasm and the nucleus, where it is involved in transcription by RNA polymerases I and II, intranuclear transport, and nuclear export. In mammalian cells, three isoforms of myosin IC are expressed that differ only in the addition of short isoform-specific N-terminal peptides. Despite the high sequence homology, the isoforms show differences in cellular distribution, in localization to nuclear substructures, and in their interaction with nuclear proteins through yet unknown mechanisms. In this study, we used EGFP-fusion constructs that express truncated or mutated versions of myosin IC isoforms to detect regions that are involved in isoform-specific localization. We identified two nucleolar localization signals (NoLS). One NoLS is located in the myosin IC isoform B specific N-terminal peptide, the second NoLS is located upstream of the neck region within the head domain. We demonstrate that both NoLS are functional and necessary for nucleolar localization of specifically myosin IC isoform B. Our data provide a first mechanistic explanation for the observed functional differences between the myosin IC isoforms and are an important step toward our understanding of the underlying mechanisms that regulate the various and distinct functions of myosin IC isoforms. - Highlights: ► Two NoLS have been identified in the myosin IC isoform B sequence. ► Both NoLS are necessary for myosin IC isoform B specific nucleolar localization. ► First mechanistic explanation of functional differences between the isoforms.

  3. Entropy driven spontaneous formation of highly porous films from polymer-nanoparticle composites

    International Nuclear Information System (INIS)

    Korampally, Venumadhav; Yun, Minseong; Rajagopalan, Thiruvengadathan; Gangopadhyay, Keshab; Gangopadhyay, Shubhra; Dasgupta, Purnendu K

    2009-01-01

    Nanoporous materials have become indispensable in many fields ranging from photonics, catalysis and semiconductor processing to biosensor infrastructure. Rapid and energy efficient process fabrication of these materials is, however, nontrivial. In this communication, we describe a simple method for the rapid fabrication of these materials from colloidal dispersions of Polymethyl Silsesquioxane nanoparticles. Nanoparticle-polymer composites above the decomposition temperature of the polymer are examined and the entropic gain experienced by the nanoparticles in this rubric is harnessed to fabricate novel highly porous films composed of nanoparticles. Optically smooth, hydrophobic films with low refractive indices (as low as 1.048) and high surface areas (as high as 1325 m 2 g -1 ) have been achieved with this approach. In this communication we address the behavior of such systems that are both temperature and substrate surface energy dependent. The method is applicable, in principle, to a variety of nanoparticle-polymer systems to fabricate custom nanoporous materials.

  4. Response of thick-film bridge junction of high-Tc YBCO to nuclear radiation

    International Nuclear Information System (INIS)

    Ding Honglin; Wang Jun; Zhang Wanchang

    1992-01-01

    The response of thick-film Josephson junction based on high-T c YBCO to nuclear radiation is described. The lengths of the junction are 2000 μm, 1000 μm, and 500 μm and the widths are 500 μm, 300 μm and 100 μm. When the junction is irradiated by low energy γ-ray of 59.5 KeV from 241 Am at temperature of 77 K and the transport current I b is more than I c , the authors obtained the reduction of 1.6 mA of critical current and volt-signal as high as 17 μV without amplifier. It has been noted that the signal amplitude is related to the distance between the junction and the radiation source. Finally the advantages and shortcomings of detector based on thick films of high T c YBCO are discussed in the paper

  5. Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K., E-mail: kkr1365@yahoo.co [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India); Muruganantham, G.; Sakthivel, B. [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India)

    2009-11-15

    Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO{sub 2}:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl{sub 2} precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08x10{sup 14} lines/m{sup 2}) when compared with that of the undoped film (13.2x10{sup 14} lines/m{sup 2}), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 OMEGA/square) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl{sub 2} precursor (without using methanol or ethanol).

  6. Characterization of thick and thin film SiCN for pressure sensing at high temperatures.

    Science.gov (United States)

    Leo, Alfin; Andronenko, Sergey; Stiharu, Ion; Bhat, Rama B

    2010-01-01

    Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA), thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40-60 μm) and thick (about 2-3 mm) films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated.

  7. Characterization of Thick and Thin Film SiCN for Pressure Sensing at High Temperatures

    Directory of Open Access Journals (Sweden)

    Rama B. Bhat

    2010-02-01

    Full Text Available Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA, thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40–60 µm and thick (about 2–3 mm films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated.

  8. High resolution x-ray scattering studies of strain in epitaxial thin films of yttrium silicide grown on silicon (111)

    International Nuclear Information System (INIS)

    Marthinez-Miranda, L.J.; Santiago-Aviles, J.J.; Siegal, M.P.; Graham, W.R.; Heiney, P.A.

    1990-01-01

    The authors have used high resolution grazing incidence x-ray scattering (GIXS) to study the in- plane and out-of-plane structure of epitaxial YSi 2-x films grown on Si(111), with thicknesses ranging from 85 Angstrom to 510 Angstrom. Their results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846 Angstrom/c = 4.142 Angstrom for the 85 Angstrom film to a = 3.877 Angstrom/c = 4.121 Angstrom for the 510 Angstrom film. The authors correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, the authors' measurements show no evidence for the existence of ordered silicon vacancies in the films

  9. Growth of high-quality large-area MgB2 thin films by reactive evaporation

    International Nuclear Information System (INIS)

    Moeckly, B H; Ruby, W S

    2006-01-01

    We report a new in situ reactive deposition thin film growth technique for the production of MgB 2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB 2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB 2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials up to 4 inch in diameter. This technique allows growth of double-sided, large-area films in the intermediate temperature range of 400-600 deg. C. These films are clean, well-connected, and consistently display T c values of 38-39 K with low resistivity and residual resistivity values. They are also robust and uncommonly stable upon exposure to atmosphere and water. (rapid communication)

  10. Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

    International Nuclear Information System (INIS)

    Yu, Ying; Zhan, Qingfeng; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Wang, Baomin; Li, Run-Wei; Wei, Jinwu; Wang, Jianbo; Xie, Shuhong

    2015-01-01

    Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices

  11. Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

    Science.gov (United States)

    Yu, Ying; Zhan, Qingfeng; Wei, Jinwu; Wang, Jianbo; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Xie, Shuhong; Wang, Baomin; Li, Run-Wei

    2015-04-01

    Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

  12. Resistivity Effects of Cation Ordering in Highly-Doped La2-xSrxCu4 Epitaxial Thin Films

    Science.gov (United States)

    Burquest, Franklin; Marmol, Rodrigo; Cox, Nicholas; Nelson-Cheeseman, Brittany

    Highly-doped La2-xSrxCuO4 (LSCO) films (0.5 causes internal polar electrostatic forces, which have been shown to cause stretching of the apical oxygen bond in analogous epitaxial nickelate films. Thin film samples are grown concurrently to minimize extraneous effects on film structure and properties. Atomic force microscopy and x-ray reflectivity demonstrate that the films are single crystalline, epitaxial, and smooth. X-ray diffraction is used to measure the c-axis of the films as a function of doping and dopant cation ordering. Electrical transport data of the ordered samples is compared with transport data of conventional disordered cation samples. Preliminary data indicates significant differences in resistivity at both 300K and 10K between the cation-ordered and cation-disordered samples. This work indicates that dopant cation ordering within the layered cuprates could significantly modify the conduction mechanisms at play in these materials.

  13. Three-dimensional high dose rate dosimetry of electron beams. A combined radiochromic film, EPR and calorimetric dosimetry

    International Nuclear Information System (INIS)

    Secerov, B.; Milosavljevic, B.H.; Bacic, G.; Belgrade Univ.

    2002-01-01

    Complete text of publication follows. Aim. To examine the suitability of radiochromic film (RCF) dosimeters in determining 3D dose distribution from a pulsed electron beam source by comparing their response with alanine EPR dosimetry and calorimetry. Experimental. A FWT-60 radiochromic films (Far West Technology Inc) were used while alanine films were home made. To obtain the dose vs. penetration depth relationship, a stack of 13 films separated by aluminium plates and/or alanine films was placed perpendicular to the electron beam (Febetron, 20 ns, 1.8 MeV, 10 12 Gy/s, dose range up to 100 kGy). RC films were calibrated using 60-Co source and Fricke dosimetry. The absorbance of irradiated films was measured using 2D microdensitometry. Calorimetry was performed with a homemade quasy-adiabatic aluminum calorimeter. Results and Discussion. Microdensitometry of films (5 x 5 cm) enabled the 3D mapping of the entire radiation field with in plane resolution of 0.12 mm. The total dose for each film was obtained by image segmentation to correct for the non-linear response of films. Integrated dose for the entire stack was in good agreement (within 5%) with total absorbed energy as determined with calorimetry. The dose distribution along the beam center was determined using alanine films (1 x 1 cm) and EPR spectroscopy, and again a good agreement with the dose determined by microdensitometry of the central portion of RC films. In conclusion, the results indicate that RC films can be used for determination of 3D dose distribution even at very high dose rates

  14. High-rate reactive magnetron sputtering of zirconia films for laser optics applications

    International Nuclear Information System (INIS)

    Juskevicius, K.; Subacius, A.; Drazdys, R.; Juskenas, R.; Audronis, M.; Matthews, A.; Leyland, A.

    2014-01-01

    ZrO 2 exhibits low optical absorption in the near-UV range and is one of the highest laser-induced damage threshold (LIDT) materials; it is, therefore, very attractive for laser optics applications. This paper reports explorations of reactive sputtering technology for deposition of ZrO 2 films with low extinction coefficient k values in the UV spectrum region at low substrate temperature. A high deposition rate (64 % of the pure metal rate) process is obtained by employing active feedback reactive gas control which creates a stable and repeatable deposition processes in the transition region. Substrate heating at 200 C was found to have no significant effect on the optical ZrO 2 film properties. The addition of nitrogen to a closed-loop controlled process was found to have mostly negative effects in terms of deposition rate and optical properties. Open-loop O 2 gas-regulated ZrO 2 film deposition is slow and requires elevated (200 C) substrate temperature or post-deposition annealing to reduce absorption losses. Refractive indices of the films were distributed in the range n = 2.05-2.20 at 1,000 nm and extinction coefficients were in the range k = 0.6 x 10 -4 and 4.8 x 10 -3 at 350 nm. X-ray diffraction analysis showed crystalline ZrO 2 films consisted of monoclinic + tetragonal phases when produced in Ar/O 2 atmosphere and monoclinic + rhombohedral or a single rhombohedral phase when produced in Ar/O 2 + N 2 . Optical and physical properties of the ZrO 2 layers produced in this study are suitable for high-power laser applications in the near-UV range. (orig.)

  15. High-Pressure CO2 Sorption in Polymers of Intrinsic Microporosity under Ultrathin Film Confinement.

    Science.gov (United States)

    Ogieglo, Wojciech; Ghanem, Bader; Ma, Xiaohua; Wessling, Matthias; Pinnau, Ingo

    2018-04-04

    Ultrathin microporous polymer films are pertinent to the development and further spread of nanotechnology with very promising potential applications in molecular separations, sensors, catalysis, or batteries. Here, we report high-pressure CO 2 sorption in ultrathin films of several chemically different polymers of intrinsic microporosity (PIMs), including the prototypical PIM-1. Films with thicknesses down to 7 nm were studied using interference-enhanced in situ spectroscopic ellipsometry. It was found that all PIMs swell much more than non-microporous polystyrene and other high-performance glassy polymers reported previously. Furthermore, chemical modifications of the parent PIM-1 strongly affected the swelling magnitude. By investigating the behavior of relative refractive index, n rel , it was possible to study the interplay between micropores filling and matrix expansion. Remarkably, all studied PIMs showed a maximum in n rel at swelling of 2-2.5% indicating a threshold point above which the dissolution in the dense matrix started to dominate over sorption in the micropores. At pressures above 25 bar, all PIMs significantly plasticized in compressed CO 2 and for the ones with the highest affinity to the penetrant, a liquidlike mixing typical for rubbery polymers was observed. Reduction of film thickness below 100 nm revealed pronounced nanoconfinement effects and resulted in a large swelling enhancement and a quick loss of the ultrarigid character. On the basis of the partial molar volumes of the dissolved CO 2 , the effective reduction of the T g was estimated to be ∼200 °C going from 128 to 7 nm films.

  16. High-Pressure CO2 Sorption in Polymers of Intrinsic Microporosity under Ultrathin Film Confinement

    KAUST Repository

    Ogieglo, Wojciech

    2018-03-12

    Ultrathin microporous polymer films are pertinent to the development and further spread of nanotechnology with very promising potential applications in molecular separations, sensors, catalysis, or batteries. Here, we report high-pressure CO2 sorption in ultrathin films of several chemically different polymers of intrinsic microporosity (PIMs), including the prototypical PIM-1. Films with thicknesses down to 7 nm were studied using interference-enhanced in situ spectroscopic ellipsometry. It was found that all PIMs swell much more than non-microporous polystyrene and other high-performance glassy polymers reported previously. Furthermore, chemical modifications of the parent PIM-1 strongly affected the swelling magnitude. By investigating the behavior of relative refractive index, nrel, it was possible to study the interplay between micropores filling and matrix expansion. Remarkably, all studied PIMs showed a maximum in nrel at swelling of 2-2.5% indicating a threshold point above which the dissolution in the dense matrix started to dominate over sorption in the micropores. At pressures above 25 bar, all PIMs significantly plasticized in compressed CO2 and for the ones with the highest affinity to the penetrant, a liquidlike mixing typical for rubbery polymers was observed. Reduction of film thickness below 100 nm revealed pronounced nanoconfinement effects and resulted in a large swelling enhancement and a quick loss of the ultrarigid character. On the basis of the partial molar volumes of the dissolved CO2, the effective reduction of the Tg was estimated to be ∼200 °C going from 128 to 7 nm films.

  17. High-Pressure CO2 Sorption in Polymers of Intrinsic Microporosity under Ultrathin Film Confinement

    KAUST Repository

    Ogieglo, Wojciech; Ghanem, Bader; Ma, Xiaohua; Wessling, Matthias; Pinnau, Ingo

    2018-01-01

    Ultrathin microporous polymer films are pertinent to the development and further spread of nanotechnology with very promising potential applications in molecular separations, sensors, catalysis, or batteries. Here, we report high-pressure CO2 sorption in ultrathin films of several chemically different polymers of intrinsic microporosity (PIMs), including the prototypical PIM-1. Films with thicknesses down to 7 nm were studied using interference-enhanced in situ spectroscopic ellipsometry. It was found that all PIMs swell much more than non-microporous polystyrene and other high-performance glassy polymers reported previously. Furthermore, chemical modifications of the parent PIM-1 strongly affected the swelling magnitude. By investigating the behavior of relative refractive index, nrel, it was possible to study the interplay between micropores filling and matrix expansion. Remarkably, all studied PIMs showed a maximum in nrel at swelling of 2-2.5% indicating a threshold point above which the dissolution in the dense matrix started to dominate over sorption in the micropores. At pressures above 25 bar, all PIMs significantly plasticized in compressed CO2 and for the ones with the highest affinity to the penetrant, a liquidlike mixing typical for rubbery polymers was observed. Reduction of film thickness below 100 nm revealed pronounced nanoconfinement effects and resulted in a large swelling enhancement and a quick loss of the ultrarigid character. On the basis of the partial molar volumes of the dissolved CO2, the effective reduction of the Tg was estimated to be ∼200 °C going from 128 to 7 nm films.

  18. Nanometer CMOS ICs from basics to ASICs

    CERN Document Server

    J M Veendrick, Harry

    2017-01-01

    This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

  19. Integrated-circuit microwave detector based on granular high-Tc thin films. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Drobinin, A.V.; Lutovinov, V.S.; Starostenko, I.V. (Moscow Inst. of Radioengineering, Electronics and Automation, (MIREA), Moscow (USSR))

    1991-12-01

    A highly sensitive integrative-circuit microwave detector based on granular High-Tc film has been designed. All matching circuits and High-Tc microbridge are located on the same substrate. The voltage responsivity 10{sup 3} V/W has been found at 65 K and frequency 5 GHz. Different modes of microwave detection have been observed: bolometric response near Tc in high-quality films, rectification mode caused by an array of weak links dominating in low-quality films, detection caused by nonlinear magnetic flux motion. (orig.).

  20. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    International Nuclear Information System (INIS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g m change, threshold voltage V T change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature

  1. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw; Lin, Yung-Hao; Lin, Jhong-Ham [Institute of Microelectronics, Department of Electrical Engineering, Research Center for Energy Technology and Strategy (RCETS), National Cheng Kung University, Tainan, Taiwan (China)

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  2. Highly transparent and conducting boron doped zinc oxide films for window of Dye Sensitized Solar Cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vinod, E-mail: vinod.phy@gmail.com [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Department of Physics, Gurukula Kangri University, Haridwar 249404 (India); Singh, R.G. [Department of Electronic Science, Maharaja Agrasen College University of Delhi, New Delhi 110096 (India); Singh, Fouran [Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Purohit, L.P. [Department of Physics, Gurukula Kangri University, Haridwar 249404 (India)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Synthesis of Boron doped ZnO (ZnO:B) films. Black-Right-Pointing-Pointer Minimum of resistivity is observed to be 7.9 Multiplication-Sign 10{sup -4} {Omega} cm. Black-Right-Pointing-Pointer Maximum transmittance {approx}91% for 450 Degree-Sign C annealed films. Black-Right-Pointing-Pointer Applicable for window materials in Dye Sensitized Solar Cell. - Abstract: Highly transparent and conducting boron doped zinc oxide (ZnO:B) films grown by sol-gel method are reported. The annealing temperature is varied from 350 to 550 Degree-Sign C and doping concentration of boron is kept fixed for 0.6 at.% for all the films. At low temperature the stress in the films is compressive, which becomes tensile for the films annealed at higher temperature. A minimum resistivity of 7.9 Multiplication-Sign 10{sup -4} {Omega} cm and maximum transmittance of {approx}91% are observed for the film annealed at 450 Degree-Sign C. This could be attributed to minimum stress of films, which is further evident by the evolution of A{sub 1} and defect related Raman modes without any shifting in its position. Such kind of highly transparent and conducting ZnO:B thin film could be used as window material in Dye Sensitized Solar Cell (DSSC).

  3. Sex Differences in Emotional Evaluation of Film Clips: Interaction with Five High Arousal Emotional Categories

    Science.gov (United States)

    Maffei, Antonio; Vencato, Valentina; Angrilli, Alessandro

    2015-01-01

    The present study aimed to investigate gender differences in the emotional evaluation of 18 film clips divided into six categories: Erotic, Scenery, Neutral, Sadness, Compassion, and Fear. 41 female and 40 male students rated all clips for valence-pleasantness, arousal, level of elicited distress, anxiety, jittery feelings, excitation, and embarrassment. Analysis of positive films revealed higher levels of arousal, pleasantness, and excitation to the Scenery clips in both genders, but lower pleasantness and greater embarrassment in women compared to men to Erotic clips. Concerning unpleasant stimuli, unlike men, women reported more unpleasantness to the Compassion, Sadness, and Fear compared to the Neutral clips and rated them also as more arousing than did men. They further differentiated the films by perceiving greater arousal to Fear than to Compassion clips. Women rated the Sadness and Fear clips with greater Distress and Jittery feelings than men did. Correlation analysis between arousal and the other emotional scales revealed that, although men looked less aroused than women to all unpleasant clips, they also showed a larger variance in their emotional responses as indicated by the high number of correlations and their relatively greater extent, an outcome pointing to a masked larger sensitivity of part of male sample to emotional clips. We propose a new perspective in which gender difference in emotional responses can be better evidenced by means of film clips selected and clustered in more homogeneous categories, controlled for arousal levels, as well as evaluated through a number of emotion focused adjectives. PMID:26717488

  4. Continuous, highly flexible, and transparent graphene films by chemical vapor deposition for organic photovoltaics.

    Science.gov (United States)

    Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W; Ryu, Koungmin; Thompson, Mark E; Zhou, Chongwu

    2010-05-25

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4-ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness ( approximately 0.9 nm) and offered sheet resistance down to 230 Omega/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (eta) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138 degrees , whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60 degrees . Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications.

  5. Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

    International Nuclear Information System (INIS)

    Gao, Feng; Arpiainen, Sanna; Puurunen, Riikka L.

    2015-01-01

    Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20–5000 μm) and cavity height (e.g., 200–1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25 000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al 2 O 3 and TiO 2 processes from Me 3 Al/H 2 O and TiCl 4 /H 2 O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes

  6. Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

    Energy Technology Data Exchange (ETDEWEB)

    Villalpando, I. [Centro de Investigacion de los Recursos Naturales, Antigua Normal Rural, Salaices, Lopez, Chihuahua (Mexico); John, P.; Wilson, J. I. B., E-mail: isaelav@hotmail.com [School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh, EH14-4AS (United Kingdom)

    2017-11-01

    The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

  7. New routes of preparation of polyaniline films and dosimetric characterization for high-doses gamma radiation

    International Nuclear Information System (INIS)

    Pacheco, Ana Paula Lima

    2003-08-01

    This work presents a new conducting polymeric material based on polyaniline thin films that will be used in the confection of dosimetric devices. On preparation of the films a homogeneous and viscous solution of poly (acrylic acid) and MnO 2 is deposited on PMMA surface, which after dried, is immersed in an acid aniline solution. The films formed present low resistivity (6.10 2 Ωm), good mechanical resistance and adherence on the electrodes. The films were characterized by infrared spectroscopy, conductivity measurements and manganese elemental analyses. The resistance variations show linear correlation (r 2 = 0,9928) with gamma irradiation dose in the range of 1000 to 6000 Gy, with medium error less than 5% and sensitivity response. The dosimetric devices present as advantage real time measurements, low cost, use in calibration of industrial radioactive sources. Moreover, this composite could in future replace Fricke dosimeter and its applications. A calibration curve is showed for PANI dosimeter, here proposed, to use at high gamma doses. (author)

  8. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis

    2010-05-25

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4- ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness (∼ 0.9 nm) and offered sheet resistance down to 230 Ω/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (η) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138°, whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60°. Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications. © 2010 American Chemical Society.

  9. Highly Anisotropic Adhesive Film Made from Upside-Down, Flat, and Uniform Vertically Aligned CNTs.

    Science.gov (United States)

    Hong, Sanghyun; Lundstrom, Troy; Ghosh, Ranajay; Abdi, Hamed; Hao, Ji; Jeoung, Sun Kyoung; Su, Paul; Suhr, Jonghwan; Vaziri, Ashkan; Jalili, Nader; Jung, Yung Joon

    2016-12-14

    We have created a multifunctional dry adhesive film with transferred vertically aligned carbon nanotubes (VA-CNTs). This unique VA-CNT film was fabricated by a multistep transfer process, converting the flat and uniform bottom of VA-CNTs grown on atomically flat silicon wafer substrates into the top surface of an adhesive layer. Unlike as-grown VA-CNTs, which have a nonuniform surface, randomly entangled CNT arrays, and a weak interface between the CNTs and substrates, this transferred VA-CNT film shows an extremely high coefficient of static friction (COF) of up to 60 and a shear adhesion force 30 times higher (12 N/cm 2 ) than that of the as-grown VA-CNTs under a very small preloading of 0.2 N/cm 2 . Moreover, a near-zero normal adhesion force was observed with 20 mN/cm 2 preloading and a maximum 100-μm displacement in a piezo scanner, demonstrating ideal properties for an artificial gecko foot. Using this unique structural feature and anisotropic adhesion properties, we also demonstrate effective removal and assembly of nanoparticles into organized micrometer-scale circular and line patterns by a single brushing of this flat and uniform VA-CNT film.

  10. Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

    International Nuclear Information System (INIS)

    Villalpando, I.; John, P.; Wilson, J. I. B.

    2017-01-01

    The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

  11. High-density arrays of titania nanoparticles using monolayer micellar films of diblock copolymers as templates.

    Science.gov (United States)

    Li, Xue; Lau, King Hang Aaron; Kim, Dong Ha; Knoll, Wolfgang

    2005-05-24

    Highly dense arrays of titania nanoparticles were fabricated using surface micellar films of poly(styrene-block-2-vinylpyridine) diblock copolymers (PS-b-P2VP) as reaction scaffolds. Titania could be introduced selectively within P2VP nanodomains in PS-b-P2VP films through the binary reaction between water molecules trapped in the P2VP domains and the TiCl(4) vapor precursors. Subsequent UV exposure or oxygen plasma treatment removed the organic matrix, leading to titania nanoparticle arrays on the substrate surface. The diameter of the titania domains and the interparticle distance were defined by the lateral scale present in the microphase-separated morphology of the initial PS-b-P2VP films. The typical diameter of titania nanoparticles obtained by oxygen plasma treatment was of the order of approximately 23 nm. Photoluminescence (PL) properties were investigated for films before and after plasma treatment. Both samples showed PL properties with major physical origin due to self-trapped excitons, indicating that the local environment of the titanium atoms is similar.

  12. Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

    Directory of Open Access Journals (Sweden)

    Chao-Te Liu

    2012-01-01

    Full Text Available The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1, a large current ratio (>103 and a low operation voltage (<6 V. Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

  13. Sex Differences in Emotional Evaluation of Film Clips: Interaction with Five High Arousal Emotional Categories.

    Directory of Open Access Journals (Sweden)

    Antonio Maffei

    Full Text Available The present study aimed to investigate gender differences in the emotional evaluation of 18 film clips divided into six categories: Erotic, Scenery, Neutral, Sadness, Compassion, and Fear. 41 female and 40 male students rated all clips for valence-pleasantness, arousal, level of elicited distress, anxiety, jittery feelings, excitation, and embarrassment. Analysis of positive films revealed higher levels of arousal, pleasantness, and excitation to the Scenery clips in both genders, but lower pleasantness and greater embarrassment in women compared to men to Erotic clips. Concerning unpleasant stimuli, unlike men, women reported more unpleasantness to the Compassion, Sadness, and Fear compared to the Neutral clips and rated them also as more arousing than did men. They further differentiated the films by perceiving greater arousal to Fear than to Compassion clips. Women rated the Sadness and Fear clips with greater Distress and Jittery feelings than men did. Correlation analysis between arousal and the other emotional scales revealed that, although men looked less aroused than women to all unpleasant clips, they also showed a larger variance in their emotional responses as indicated by the high number of correlations and their relatively greater extent, an outcome pointing to a masked larger sensitivity of part of male sample to emotional clips. We propose a new perspective in which gender difference in emotional responses can be better evidenced by means of film clips selected and clustered in more homogeneous categories, controlled for arousal levels, as well as evaluated through a number of emotion focused adjectives.

  14. High-resolution storage phosphor imaging of the chest: Comparison with conventional screen-film systems

    International Nuclear Information System (INIS)

    Fuhrman, C.R.; Good, B.; Feist, J.; Gur, D.; Darby, J.

    1987-01-01

    An experimental high-resolution storage phosphor imaging system (Eastman Kodak) has been used to evaluate the image quality and impact on diagnostic interpretation of storage phosphor images relative to conventional screen-film images of the same patients. The elements of the system include a high-resolution laser scanner (4K X 5K X 12 bit); an image processing system; and a high-resolution (4K X 5K X 12 bit) laser printer. Each case was digitally printed onto film in two different formats: a full-size (14 X 14-inch) and a half-size format of four processed, minified images (7 X 7-inches each). The multiformat image includes an original, an unsharp-masked, a reversed (black bone) unsharp-masked, and a high-contrast unsharp-masked image. The results of this preliminary study (11 cases, eight readers) clearly indicate that after minimal adjustment, radiologists do not object to making diagnoses from minified images. Unsharp masked images were considered preferable to unprocessed images, and processed storage phosphor images were rated significantly better than conventional film images

  15. High dose per fraction dosimetry of small fields with Gafchromic EBT2 film

    International Nuclear Information System (INIS)

    Hardcastle, Nicholas; Basavatia, Amar; Bayliss, Adam; Tome, Wolfgang A.

    2011-01-01

    Purpose: Small field dosimetry is prone to uncertainties due to the lack of electronic equilibrium and the use of the correct detector size relative to the field size measured. It also exhibits higher sensitivity to setup errors as well as large variation in output with field size and shape. Radiochromic film is an attractive method for reference dosimetry in small fields due to its ability to provide 2D dose measurements while having minimal impact on the dose distribution. Gafchromic EBT2 has a dose range of up to 40 Gy; therefore, it could potentially be useful for high dose reference dosimetry with high spatial resolution. This is a requirement in stereotactic radiosurgery deliveries, which deliver high doses per fraction to small targets. Methods: Targets of 4 mm and 12 mm diameters were treated to a minimum peripheral dose of 21 Gy prescribed to 80% of the maximum dose in one fraction. Target doses were measured with EBT2 film (both targets) and an ion chamber (12 mm target only). Measured doses were compared with planned dose distributions using profiles through the target and minimum peripheral dose coverage. Results: The measured target doses and isodose coverage agreed with the planned dose within ±1 standard deviation of three measurements, which were 2.13% and 2.5% for the 4 mm and 12 mm targets, respectively. Conclusions: EBT2 film is a feasible dosimeter for high dose per fraction reference 2D dosimetry.

  16. Exploiting NiTi shape memory alloy films in design of tunable high frequency microcantilever resonators

    Science.gov (United States)

    Stachiv, I.; Sittner, P.; Olejnicek, J.; Landa, M.; Heller, L.

    2017-11-01

    Shape memory alloy (SMA) films are very attractive materials for microactuators because of their high energy density. However, all currently developed SMA actuators utilize martensitic transformation activated by periodically generated heating and cooling; therefore, they have a slow actuation speed, just a few Hz, which restricts their use in most of the nanotechnology applications such as high frequency microcantilever based physical and chemical sensors, atomic force microscopes, or RF filters. Here, we design tunable high frequency SMA microcantilevers for nanotechnology applications. They consist of a phase transforming NiTi SMA film sputtered on the common elastic substrate material; in our case, it is a single-crystal silicon. The reversible tuning of microcantilever resonant frequencies is then realized by intentionally changing the Young's modulus and the interlayer stress of the NiTi film by temperature, while the elastic substrate guarantees the high frequency actuation (up to hundreds of kHz) of the microcantilever. The experimental results qualitatively agree with predictions obtained from the dedicated model based on the continuum mechanics theory and a phase characteristic of NiTi. The present design of SMA microcantilevers expands the capability of current micro-/nanomechanical resonators by enabling tunability of several consecutive resonant frequencies.

  17. Highly Oriented Growth of Catalytically Active Zeolite ZSM-5 Films with a Broad Range of Si/Al Ratios

    NARCIS (Netherlands)

    Fu, Donglong|info:eu-repo/dai/nl/412516918; Schmidt, Joel E.|info:eu-repo/dai/nl/413333736; Ristanovic, Zoran|info:eu-repo/dai/nl/328233005; Chowdhury, Abhishek Dutta|info:eu-repo/dai/nl/412438003; Meirer, Florian; Weckhuysen, Bert M.|info:eu-repo/dai/nl/285484397

    2017-01-01

    Highly b-oriented zeolite ZSM-5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al3+ usually disrupts the orientation of zeolite films.

  18. Preparation and characterization of thin-film Pd–Ag supported membranes for high-temperature applications

    NARCIS (Netherlands)

    Fernandez Gesalaga, Ekain; Coenen, Kai; Helmi Siasi Farimani, Arash; Melendez, J.; Zuniga, Jon; Pacheco Tanaka, David Alfredo; van Sint Annaland, Martin; Gallucci, Fausto

    2015-01-01

    This paper reports the preparation, characterization and stability tests of thin-film Pd–Ag supported membranes for high-temperature fluidized bed membrane reactor applications. Various thin-film supported membranes have been prepared by simultaneous Pd–Ag electroless plating and have been initially

  19. Poly(vinyl alcohol) composite films with high percent elongation prepared from amylose-fatty ammonium salt inclusion complexes

    Science.gov (United States)

    Amylose inclusion complexes prepared from cationic fatty ammonium salts and jet-cooked high amylose starch were combined with poly(vinyl alcohol) (PVOH) to form glycerol-plasticized films. Their tensile properties were compared with similar films prepared previously with analogous anionic fatty acid...

  20. Very high-cycle fatigue failure in micron-scale polycrystalline silicon films : Effects of environment and surface oxide thickness

    NARCIS (Netherlands)

    Alsem, D. H.; Boyce, B. L.; Stach, E. A.; De Hosson, J. Th. M.; Ritchie, R. O.

    2007-01-01

    Fatigue failure in micron-scale polycrystalline silicon structural films, a phenomenon that is not observed in bulk silicon, can severely impact the durability and reliability of microelectromechanical system devices. Despite several studies on the very high-cycle fatigue behavior of these films (up