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Sample records for high ic film

  1. Functional Laser Trimming Of Thin Film Resistors On Silicon ICs

    Science.gov (United States)

    Mueller, Michael J.; Mickanin, Wes

    1986-07-01

    Modern Laser Wafer Trimming (LWT) technology achieves exceptional analog circuit performance and precision while maintain-ing the advantages of high production throughput and yield. Microprocessor-driven instrumentation has both emphasized the role of data conversion circuits and demanded sophisticated signal conditioning functions. Advanced analog semiconductor circuits with bandwidths over 1 GHz, and high precision, trimmable, thin-film resistors meet many of todays emerging circuit requirements. Critical to meeting these requirements are optimum choices of laser characteristics, proper materials, trimming process control, accurate modeling of trimmed resistor performance, and appropriate circuit design. Once limited exclusively to hand-crafted, custom integrated circuits, designs are now available in semi-custom circuit configurations. These are similar to those provided for digital designs and supported by computer-aided design (CAD) tools. Integrated with fully automated measurement and trimming systems, these quality circuits can now be produced in quantity to meet the requirements of communications, instrumentation, and signal processing markets.

  2. Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator

    Science.gov (United States)

    Palumbo, V.; Marchesi, M.; Chiesi, V.; Paci, D.; Iuliano, P.; Toia, F.; Casoli, F.; Ranzieri, P.; Albertini, F.; Morelli, M.

    2013-01-01

    This work deals with a cobalt-based alloy thin film magnetic concentrator (MC) which is fully integrated on a Hall sensor integrated circuit (IC) developed in the 0.35 µm Bipolar CMOS DMOS (BCD) technology on 8" silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field Hc<10A/m and saturation magnetization (µ0MS) of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.

  3. Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator

    Directory of Open Access Journals (Sweden)

    Albertini F.

    2013-01-01

    Full Text Available This work deals with a cobalt-based alloy thin film magnetic concentrator (MC which is fully integrated on a Hall sensor integrated circuit (IC developed in the 0.35 µm Bipolar CMOS DMOS (BCD technology on 8” silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field Hc<10A/m and saturation magnetization (µ0MS of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.

  4. High frame rate measurements of semiconductor pixel detector readout IC

    Science.gov (United States)

    Szczygiel, R.; Grybos, P.; Maj, P.

    2012-07-01

    We report on high count rate and high frame rate measurements of a prototype IC named FPDR90, designed for readouts of hybrid pixel semiconductor detectors used for X-ray imaging applications. The FPDR90 is constructed in 90 nm CMOS technology and has dimensions of 4 mm×4 mm. Its main part is a matrix of 40×32 pixels with 100 μm×100 μm pixel size. The chip works in the single photon counting mode with two discriminators and two 16-bit ripple counters per pixel. The count rate per pixel depends on the effective CSA feedback resistance and can be set up to 6 Mcps. The FPDR90 can operate in the continuous readout mode, with zero dead time. Due to the architecture of digital blocks in pixel, one can select the number of bits read out from each counter from 1 to 16. Because in the FPDR90 prototype only one data output is available, the frame rate is 9 kfps and 72 kfps for 16 bits and 1 bit readout, respectively (with nominal clock frequency of 200 MHz).

  5. High frame rate measurements of semiconductor pixel detector readout IC

    Energy Technology Data Exchange (ETDEWEB)

    Szczygiel, R., E-mail: robert.szczygiel@agh.edu.pl [AGH University of Science and Technology, Department of Measurement and Instrumentation, Al. Mickiewicza 30, 30-059 Cracow (Poland); Grybos, P.; Maj, P. [AGH University of Science and Technology, Department of Measurement and Instrumentation, Al. Mickiewicza 30, 30-059 Cracow (Poland)

    2012-07-11

    We report on high count rate and high frame rate measurements of a prototype IC named FPDR90, designed for readouts of hybrid pixel semiconductor detectors used for X-ray imaging applications. The FPDR90 is constructed in 90 nm CMOS technology and has dimensions of 4 mm Multiplication-Sign 4 mm. Its main part is a matrix of 40 Multiplication-Sign 32 pixels with 100 {mu}m Multiplication-Sign 100 {mu}m pixel size. The chip works in the single photon counting mode with two discriminators and two 16-bit ripple counters per pixel. The count rate per pixel depends on the effective CSA feedback resistance and can be set up to 6 Mcps. The FPDR90 can operate in the continuous readout mode, with zero dead time. Due to the architecture of digital blocks in pixel, one can select the number of bits read out from each counter from 1 to 16. Because in the FPDR90 prototype only one data output is available, the frame rate is 9 kfps and 72 kfps for 16 bits and 1 bit readout, respectively (with nominal clock frequency of 200 MHz).

  6. Design of a High Performance Green-Mode PWM Controller IC with Smart Sensing Protection Circuits

    National Research Council Canada - National Science Library

    Shen-Li Chen; Shih-Hua Hsu

    2014-01-01

      A design of high performance green-mode pulse-width-modulation (PWM) controller IC with smart sensing protection circuits for the application of lithium-ion battery charger is investigated in this article...

  7. Determination of halogens and sulfur in high-purity polyimide by IC after digestion by MIC.

    Science.gov (United States)

    Krzyzaniak, Sindy R; Santos, Rafael F; Dalla Nora, Flavia M; Cruz, Sandra M; Flores, Erico M M; Mello, Paola A

    2016-09-01

    In this work, a method for sample preparation of high-purity polyimide was proposed for halogens and sulfur determination by ion chromatography (IC) with conductivity detection and, alternatively, by inductively coupled plasma mass spectrometry (ICP-MS). A relatively high polyimide mass (600mg) was completely digested by microwave-induced combustion (MIC) using 20bar of O2 and 50mmolL(-1) NH4OH as absorbing solution. These conditions allowed final solutions with low carbon content (IC and ICP-MS. The accuracy was evaluated using a certified reference material of polymer for Cl, Br and S and spike recovery experiments for all analytes. No statistical difference (t-test, 95% of confidence level) was observed between the results obtained for Cl, Br and S by IC after MIC and the certified values. In addition, spike recoveries obtained for F, Cl, Br, I and S ranged from 94% to 101%. The proposed method was suitable for polyimide decomposition for further determination of halogens and sulfur by IC and by ICP-MS (Br and I only). Taking into account the lack of methods and the difficulty of bringing this material into solution, MIC can be considered as a suitable alternative for the decomposition of polyimide for routine quality control of halogens and sulfur using IC or ICP-MS.

  8. A High-Resolution Radio Continuum Study Of The Dwarf Irregular Galaxy IC 10

    Science.gov (United States)

    Westcott, J.; Brinks, E.; Beswick, R. J.; Heesen, V.; Argo, M. K.; Baldi, R. D.; Fenech, D. M.; McHardy, I. M.; Smith, D. J. B.; Williams, D. R. A.

    2017-01-01

    We present high-resolution e-MERLIN radio continuum maps of the Dwarf Irregular galaxy IC 10 at 1.5 GHz and 5 GHz. We detect 11 compact sources at 1.5 GHz, 5 of which have complementary detections at 5 GHz. We classify 3 extended sources as compact HII regions within IC 10, 5 sources as contaminating background galaxies and identify 3 sources which require additional observations to classify. We do not expect that any of these 3 sources are Supernova Remnants as they will likely be resolved out at the assumed distance of IC 10 (0.7 Mpc). We correct integrated flux densities of IC 10 from the literature for contamination by unrelated background sources and obtain updated flux density measurements of 354 ± 11 mJy at 1.5 GHz and 199 ± 9 mJy at 4.85 GHz. The background contamination does not contribute significantly to the overall radio emission from IC 10, so previous analysis concerning its integrated radio properties remain valid.

  9. The EVN view of the highly variable TeV active galaxy IC 310

    CERN Document Server

    Schulz, R; Ros, E; Glawion, D Eisenacher; Bach, U; Elsässer, D; Grossberger, C; Kreykenbohm, I; Mannheim, K; Müller, C; Trüstedt, J; Wilms, J

    2015-01-01

    Very-high-energy $\\gamma$-ray observations of the active galaxy IC 310 with the MAGIC telescopes have revealed fast variability with doubling time scales of less than 4.8min. This implies that the emission region in IC 310 is smaller than 20% of the gravitational radius of the central supermassive black hole with a mass of $3\\times 10^8 M_\\odot$, which poses serious questions on the emission mechanism and classification of this enigmatic object. We report on the first quasi-simultaneous multi-frequency VLBI observations of IC 310 conducted with the EVN. We find a blazar-like one-sided core-jet structure on parsec scales, constraining the inclination angle to be less than $\\sim 20^\\circ$ but very small angles are excluded to limit the de-projected length of the large-scale radio jet.

  10. Applicability of Superconducting Interconnection Technology for High Speed ICs and Systems

    Science.gov (United States)

    1992-10-01

    34, Addison-Wesley Publishing Co., Reading, MA, 1990 (ISBN 0-201-06008-6). 5. H. Piel and G. Muller , "The Microwave Surface Impedance of High Tc...IC’s and Systems DARPA 90-06 June 1992 QUARTERLY REPORT Rac(coax) - Rc(center conducto ) l+-1 Eq. 36 and Lint (coax) - L, (center conducto ) I + k Eq. 37

  11. High-resolution radio study of SNR IC443 at low radio frequencies

    CERN Document Server

    Castelletti, G; Clarke, T; Kassim, N E

    2011-01-01

    We investigated in detail the morphology at low radio frequencies of the supernova remnant IC443 and accurately established its radio continuum spectral properties. We used the VLA in multiple configurations to produce high resolution radio images of IC443 at 74 and 330 MHz. The changes with position in the radio spectral index were correlated with data in near infrared from 2MASS, in gamma-rays from VERITAS, and with the molecular 12^CO line emission. The new image at 74 MHz has HPBW=35", rms=30 mJy/beam and at 330 MHz HPBW= 17" and rms=1.7 mJy/beam. The integrated flux densities for the whole SNR are S_74MHz=470+/-51 Jy and S_330MHz=248+/-15 Jy. For the pulsar wind nebula associated with the compact source CXOUJ061705.3+222127, we calculated S_330MHz=0.23+/-0.05 Jy, S_1420MHz=0.20+/-0.04 Jy, and alpha~0.0. Substantial variations are observed in spectral index between 74 and 330 MHz across IC443. The flattest spectral components (-0.25< alpha<-0.05) coincide with the brightest parts of the SNR along th...

  12. Nanoliter homogenous ultra-high throughput screening microarray for lead discoveries and IC50 profiling.

    Science.gov (United States)

    Ma, Haiching; Horiuchi, Kurumi Y; Wang, Yuan; Kucharewicz, Stefan A; Diamond, Scott L

    2005-04-01

    Microfluidic technologies offer the potential for highly productive and low-cost ultra-high throughput screening and high throughput selectivity profiling. Such technologies need to provide the flexibility of plate-based assays as well as be less expensive to operate. Presented here is a unique microarray system (the Reaction Biology [Malvern, PA] DiscoveryDot), which runs over 6,000 homogeneous reactions per 1" x 3" microarray using chemical libraries or compound dilutions printed in 1-nl volumes. A simple and rapid piezo-activation method delivers from 30 to 300 pl of biochemical targets and detector chemistries to each reaction. The fluorescent signals are detected and analyzed with conventional microarray scanners and software. The DiscoveryDot platform is highly customizable, and reduces consumption of targets and reaction chemistries by >40-fold and the consumption of compounds by >10,000-fold, compared to 384-well plate assay. We demonstrate here that the DiscoveryDot platform is compatible with conventional large-volume well-based reactions, with a Z' factor of >0.6 for many enzymes, such as the caspase family enzymes, matrix metalloproteinase, serine proteases, kinases, and histone deacetylases. The platform is well equipped for 50% inhibitory concentration (IC50) profiling studies of enzyme inhibitors, with up to 10 dilution conditions of each test compound printed in duplicate, and each microarray chip can generate over 300 IC50 measurements against a given target.

  13. High rate nitrogen removal by ANAMMOX internal circulation reactor (IC) for old landfill leachate treatment.

    Science.gov (United States)

    Phan, The Nhat; Van Truong, Thi Thanh; Ha, Nhu Biec; Nguyen, Phuoc Dan; Bui, Xuan Thanh; Dang, Bao Trong; Doan, Van Tuan; Park, Joonhong; Guo, Wenshan; Ngo, Huu Hao

    2017-06-01

    This study aimed to evaluate the performance of a high rate nitrogen removal lab-scale ANAMMOX reactor, namely Internal Circulation (IC) reactor, for old landfill leachate treatment. The reactor was operated with pre-treated leachate from a pilot Partial Nitritation Reactor (PNR) using a high nitrogen loading rate ranging from 2 to 10kgNm(-3)d(-1). High rate removal of nitrogen (9.52±1.11kgNm(-3)d(-1)) was observed at an influent nitrogen concentration of 1500mgNL(-1). The specific ANAMMOX activity was found to be 0.598±0.026gN2-NgVSS(-1)d(-1). Analysis of ANAMMOX granules suggested that 0.5-1.0mm size granular sludge was the dominant group. The results of DNA analysis revealed that Candidatus Kueneniastuttgartiensis was the dominant species (37.45%) in the IC reactor, whereas other species like uncultured Bacteroidetes bacterium only constituted 5.37% in the system, but they were still responsible for removing recalcitrant organic matter.

  14. VCSEL-based, high-speed, in situ TDLAS for in-cylinder water vapor measurements in IC engines

    National Research Council Canada - National Science Library

    Witzel, O; Klein, A; Meffert, C; Wagner, S; Kaiser, S; Schulz, C; Ebert, V

    2013-01-01

    We report the first application of a vertical-cavity surfaceemitting laser (VCSEL) for calibration- and sampling-free, high-speed, in situ H2O concentration measurements in IC engines using direct TDLAS...

  15. IC Treatment: Surgical Procedures

    Science.gov (United States)

    ... Complicated IC Cases Promising IC Diagnostic Tests Wrong Diagnosis IC Treatment Guideline IC Treatments IC Diet & Self Management Physical Therapy Antidepressants Antihistamines Pentosan Polysulfate Sodium Bladder Instillations Immunosuppresants ...

  16. IC: Frequently Asked Questions

    Science.gov (United States)

    ... Complicated IC Cases Promising IC Diagnostic Tests Wrong Diagnosis IC Treatment Guideline IC Treatments IC Diet & Self Management Physical Therapy Antidepressants Antihistamines Pentosan Polysulfate Sodium Bladder Instillations Immunosuppresants ...

  17. IC Treatment: Antihistamines

    Science.gov (United States)

    ... Complicated IC Cases Promising IC Diagnostic Tests Wrong Diagnosis IC Treatment Guideline IC Treatments IC Diet & Self Management Physical Therapy Antidepressants Antihistamines Pentosan Polysulfate Sodium Bladder Instillations Immunosuppresants ...

  18. Men and IC

    Science.gov (United States)

    ... Complicated IC Cases Promising IC Diagnostic Tests Wrong Diagnosis IC Treatment Guideline IC Treatments IC Diet & Self Management Physical Therapy Antidepressants Antihistamines Pentosan Polysulfate Sodium Bladder Instillations Immunosuppresants ...

  19. General IC Symptoms

    Science.gov (United States)

    ... Complicated IC Cases Promising IC Diagnostic Tests Wrong Diagnosis IC Treatment Guideline IC Treatments IC Diet & Self Management Physical Therapy Antidepressants Antihistamines Pentosan Polysulfate Sodium Bladder Instillations Immunosuppresants ...

  20. Children and IC

    Science.gov (United States)

    ... Complicated IC Cases Promising IC Diagnostic Tests Wrong Diagnosis IC Treatment Guideline IC Treatments IC Diet & Self Management Physical Therapy Antidepressants Antihistamines Pentosan Polysulfate Sodium Bladder Instillations Immunosuppresants ...

  1. Realization of an 850V High Voltage Half Bridge Gate Drive IC with a New NFFP HVI Structure

    Institute of Scientific and Technical Information of China (English)

    Ming Qiao; Hong-Jie Wang; Ming-Wei Duan; Jian Fang; Bo Zhang; Zhao-Ji Li

    2007-01-01

    A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure,the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the selfshielding structure.

  2. Sliding Mode Pulsed Averaging IC Drivers for High Brightness Light Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Anatoly Shteynberg, PhD

    2006-08-17

    This project developed new Light Emitting Diode (LED) driver ICs associated with specific (uniquely operated) switching power supplies that optimize performance for High Brightness LEDs (HB-LEDs). The drivers utilize a digital control core with a newly developed nonlinear, hysteretic/sliding mode controller with mixed-signal processing. The drivers are flexible enough to allow both traditional microprocessor interface as well as other options such as “on the fly” adjustment of color and brightness. Some other unique features of the newly developed drivers include • AC Power Factor Correction; • High power efficiency; • Substantially fewer external components should be required, leading to substantial reduction of Bill of Materials (BOM). Thus, the LED drivers developed in this research : optimize LED performance by increasing power efficiency and power factor. Perhaps more remarkably, the LED drivers provide this improved performance at substantially reduced costs compared to the present LED power electronic driver circuits. Since one of the barriers to market penetration for HB-LEDs (in particular “white” light LEDs) is cost/lumen, this research makes important contributions in helping the advancement of SSL consumer acceptance and usage.

  3. High-precision analog circuit technology for power supply integrated circuits; Dengen IC yo koseido anarogu kairo gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Nakamori, A.; Suzuki, T.; Mizoe, K. [Fuji Electric Corporate Research and Development,Ltd., Kanagawa (Japan)

    2000-08-10

    With the recent rapid spread of portable electronic appliances, specification requirements such as compact power supply and long operation with batteries have become severer. Power supply ICs (integrated circuits) are required to reduce power consumption in the circuit and perform high-precision control. To meet these requirements, Fuji Electric develops high-precision CMOS (complementary metal-oxide semiconductor) analog technology. This paper describes three analog circuit technologies of a voltage reference, an operational amplifier and a comparator as circuit components particularly important for the precision of power supply ICs. (author)

  4. Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics

    NARCIS (Netherlands)

    Ishihara, R.; Zhang, J.; Trifunovic, M.; Derakhshandeh Kheljani, J.; Golshani, N.; Tajari Mofrad, M.R.; Chen, T.; Beenakker, C.I.M.; Shimoda, T.

    2014-01-01

    We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor

  5. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

    Science.gov (United States)

    Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

    2017-03-29

    Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

  6. IC/MBBR工艺处理高COD、高氨氮煤化工废水%IC/MBBR Process for Treatment of High COD and Ammonia Nitrogen Wastewater

    Institute of Scientific and Technical Information of China (English)

    魏谷

    2012-01-01

    采用IC/MBBR生化工艺处理煤化工生产废水.通过监测COD的去除效果和产气状况,分析了IC厌氧反应器启动及负荷期间的运行情况;通过监测VFA、ALK和pH值的变化趋势分析了IC厌氧反应器的酸化及恢复情况.MBBR反应器启动期间对氨氮的去除率高于COD;通过氮衡算,发现反应器中存在非传统的硝化/反硝化脱氮途径,这一现象在运行期间的氧利用估算中得到进一步证实.%IC/MBBR was used as bio-process to treat coal chemical wastewater. The operation status of IC anaerobic reactor during start-up and loading was analyzed by monitoring COD removal and gas production. The acidification and recovery of IC anaerobic reactor were also analyzed by monitoring VFA, ALK and pH. During MBBR start-up, the removal rate of NH3 - N was higher than that of COD. It was found by nitrogen balance calculation that a non-nitrification/denitrification pathway for nitrogen removal existed in the reactor. This phenomenon was verified by oxygen consumption estimation during the operation.

  7. Flexible amorphous metal films with high stability

    Science.gov (United States)

    Liu, M.; Cao, C. R.; Lu, Y. M.; Wang, W. H.; Bai, H. Y.

    2017-01-01

    We report the formation of amorphous Cu50Zr50 films with a large-area of more than 100 cm2. The films were fabricated by ion beam assisted deposition with a slow deposition rate at moderate temperature. The amorphous films have markedly enhanced thermal stability, excellent flexibility, and high reflectivity with atomic level smoothness. The multifunctional properties of the amorphous films are favorites in the promising applications of smart skin or wearable devices. The method of preparing highly stable amorphous metal films by tuning the deposition rate instead of deposition temperature could pave a way for exploring amorphous metal films with unique properties.

  8. A High-Performance Current-Mode Source Driver IC for Mobile Active Matrix Organic Light Emitting Diode Displays

    Science.gov (United States)

    Jeong, Il-Hun; Kwon, Oh-Kyong

    2008-03-01

    In this paper, we describe two types of 8-bit current-mode driver ICs with a small area and good performance for applications high accuracy current-mode digital-to-analog converters (DACs), and improved channel-to-channel uniformity for active matrix organic light-emitting diode (AMOLED) displays. One uses the proposed current steering DAC (type A), which is an improved architecture of a binary-weighted DAC, and the other uses a DAC that is a combination of a thermometer-decoded of the DAC and a binary-weighted type. The measured results show that the peak integral nonlinearity (INL) is within ±0.5 the least significant bit (LSB), the peak differential nonlinearity (DNL) is within ±0.5 LSB, and the nonuniformity of output current among channels and chips is within ±0.5 LSB. The size of the driver IC is 15,820 ×1,500 µm2 and the total power consumption of the current-mode driver IC is less than 9 mW when the display has full-white pattern with a luminance of 150 cd/m2. The chip area and power consumption with the proposed current DAC are reduced by 26 and 10%, respectively, compared with those of conventional driver ICs with a fully binary-weighted DAC.

  9. IC Associated Conditions

    Science.gov (United States)

    ... likely than the general population to have systemic lupus erythematosus. More recent research has revealed that IC may ... Pain & IC Hunner’s Ulcers IC Flares Women & IC Pregnancy & IC Intimacy & ... Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia ...

  10. Pregnancy and IC

    Science.gov (United States)

    ... Profile Home About IC Women & IC Pregnancy & IC Pregnancy & IC How Pregnancy Affects IC Unfortunately, there is limited scientific data ... 2009 issue of the ICA Update . Planning Your Pregnancy Planning ahead for your pregnancy will let you: ...

  11. General IC Symptoms

    Science.gov (United States)

    ... IC Symptoms of IC General IC Symptoms General IC Symptoms Symptoms of interstitial cystitis (IC) differ from ... news and events. Please leave this field empty Interstitial Cystitis Association 7918 Jones Branch Drive, Suite 300 McLean, ...

  12. Low noise high-speed X-ray readout IC for imaging applications

    CERN Document Server

    Tsakas, E F; Manthos, N; Kloukinas, K; Evangelou, I; Triantis, F A; Stelt, P F V D; Speller, R D

    2001-01-01

    We present a mixed-signal, continuously sensitive, self-triggered IC designed for X-ray imaging applications. Both bipolar and CMOS devices were employed in order to achieve the speed and noise requirements associated with the particular application. Phenomena related to the submicron nature of the devices used have been also taken into consideration. The circuit is optimized to operate with a 3 pF Si-microstrip detector and it exhibits an equivalent noise charge of 225e sup - rms with a slope of 45e sup - /pF. The peaking time of the pulse at the output of the analog part is 28 ns and the circuit recovers to the baseline within 600 ns. Moreover, it has the ability of handling either positive or negative current pulses originating from the detector. The IC power consumption is 4.5 mW per channel and the chip was fabricated using a 0.8 mu m BiCMOS technology.

  13. High-performance flexible thin-film transistors exfoliated from bulk wafer.

    Science.gov (United States)

    Zhai, Yujia; Mathew, Leo; Rao, Rajesh; Xu, Dewei; Banerjee, Sanjay K

    2012-11-14

    Mechanically flexible integrated circuits (ICs) have gained increasing attention in recent years with emerging markets in portable electronics. Although a number of thin-film-transistor (TFT) IC solutions have been reported, challenges still remain for the fabrication of inexpensive, high-performance flexible devices. We report a simple and straightforward solution: mechanically exfoliating a thin Si film containing ICs. Transistors and circuits can be prefabricated on bulk silicon wafer with the conventional complementary metal-oxide-semiconductor (CMOS) process flow without additional temperature or process limitations. The short channel MOSFETs exhibit similar electrical performance before and after exfoliation. This exfoliation process also provides a fast and economical approach to producing thinned silicon wafers, which is a key enabler for three-dimensional (3D) silicon integration based on Through Silicon Vias (TSVs).

  14. A high mass progenitor for the Type Ic Supernova 2007gr inferred from its environment

    CERN Document Server

    Maund, Justyn

    2016-01-01

    We present an analysis of late-time Hubble Space Telescope Wide Field Camera 3 and Wide Field Planetary Camera 2 observations of the site of the Type Ic SN 2007gr in NGC 1058. The SN is barely recovered in the late-time WFPC2 observations, while a possible detection in the later WFC3 data is debatable. These observations were used to conduct a multiwavelength study of the surrounding stellar population. We fit spatial profiles to a nearby bright source that was previously proposed to be a host cluster. We find that, rather than being an extended cluster, it is consistent with a single point-like object. Fitting stellar models to the observed spectral energy distribution of this source, we conclude it is A1-A3 Yellow Supergiant, possibly corresponding to a star with $M_{ZAMS} = 40M_{\\odot}$. SN 2007gr is situated in a massive star association, with diameter of $\\approx 300\\,\\mathrm{pc}$. We present a Bayesian scheme to determine the properties of the surrounding massive star population, in conjunction with the...

  15. High Spatial Resolution X-Ray Spectroscopy of the IC443 Pulsar Wind Nebula and Environs

    CERN Document Server

    Swartz, Douglas A; Clarke, Tracy; Castelletti, Gabriela; Zavlin, Vyacheslav E; Bucciantini, Niccolò; Karovska, Margarita; van der Horst, Alexander J; Yukita, Mihoko; Weisskopf, Martin C

    2015-01-01

    Deep Chandra ACIS observations of the region around the putative pulsar, CXOU J061705.3+222127, in the supernova remnant IC443 reveal an ~5$^{\\prime\\prime}$-radius ring-like structure surrounding the pulsar and a jet-like feature oriented roughly north-south across the ring and through the pulsar's location at 06$^{\\rm h}$17$^{\\rm m}$5.200$^{\\rm s}$ +22$^{\\circ}$21$^{\\prime}$27.52$^{\\prime\\prime}$ (J2000.0 coordinates). The observations further confirm that (1) the spectrum and flux of the central object are consistent with a rotation-powered pulsar, (2) the non-thermal spectrum and morphology of the surrounding nebula are consistent with a pulsar wind and, (3) the spectrum at greater distances is consistent with thermal emission from the supernova remnant. The cometary shape of the nebula, suggesting motion towards the southwest, appears to be subsonic: There is no evidence either spectrally or morphologically for a bow shock or contact discontinuity; the nearly circular ring is not distorted by motion throu...

  16. Structural changes of filled ice Ic hydrogen hydrate under low temperatures and high pressures from 5 to 50 GPa.

    Science.gov (United States)

    Hirai, Hisako; Kagawa, Shingo; Tanaka, Takehiko; Matsuoka, Takahiro; Yagi, Takehiko; Ohishi, Yasuo; Nakano, Satoshi; Yamamoto, Yoshitaka; Irifune, Tetsuo

    2012-08-21

    Low-temperature and high-pressure experiments were performed on the filled ice Ic structure of hydrogen hydrate at previously unexplored conditions of 5-50 GPa and 30-300 K using diamond anvil cells and a helium-refrigeration cryostat. In situ x-ray diffractometry revealed that the cubic filled ice Ic structure transformed to tetragonal at low temperatures and high pressures; the axis ratio of the tetragonal phase changed depending on the pressure and temperature. These results were consistent with theoretical predictions performed via first principle calculations. The tetragonal phase was determined to be stable above 20 GPa at 300 K, above 15 GPa at 200 K, and above 10 GPa at 100 K. Further changes in the lattice parameters were observed from about 45-50 GPa throughout the temperature region examined, which suggests the transformation to another high-pressure phase above 50 GPa. In our previous x-ray study that was performed up to 80 GPa at room temperature, a similar transformation was observed above 50 GPa. In this study, the observed change in the lattice parameters corresponds to the beginning of that transformation. The reasons for the transformation to the tetragonal structure are briefly discussed: the tetragonal structure might be induced due to changes in the vibrational or rotational modes of the hydrogen molecules under low temperature and high pressure.

  17. Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

    DEFF Research Database (Denmark)

    Godin, Jean; Nodjiadjim, V.; Riet, Muriel;

    2008-01-01

    We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Vari...

  18. HIGH SPATIAL RESOLUTION X-RAY SPECTROSCOPY OF THE IC 443 PULSAR WIND NEBULA AND ENVIRONS

    Energy Technology Data Exchange (ETDEWEB)

    Swartz, Douglas A.; Zavlin, Vyacheslav E. [USRA, Astrophysics Office, NASA Marshall Space Flight Center, ZP12, Huntsville, AL 35812 (United States); Pavlov, George G. [Department of Astronomy and Astrophysics, Pennsylvania State University, 525 Davey Lab, University Park, PA 16802 (United States); Clarke, Tracy [Remote Sensing Division, Code 7213, Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, DC (United States); Castelletti, Gabriela [Instituto de Astronomía y Física del Espacio (IAFE, CONICET-UBA), CC67, Suc. 28, 1428, Buenos Aires (Argentina); Bucciantini, Niccolò [INAF—Osservatorio Astrofisico di Arcetri, L. go E. Fermi 5, I-50125 Firenze (Italy); Karovska, Margarita [Smithsonian Astrophysical Observatory, MS 4, 60 Garden Street, Cambridge, MA 02138 (United States); Horst, Alexander J. van der [Department of Physics, The George Washington University, 725 21 Street NW, Washington, DC 20052 (United States); Yukita, Mihoko [The Johns Hopkins University, Homewood Campus, Baltimore, MD 21218 (United States); Weisskopf, Martin C. [Astrophysics Office, NASA Marshall Space Flight Center, ZP12, Huntsville, AL 35812 (United States)

    2015-07-20

    Deep Chandra ACIS observations of the region around the putative pulsar, CXOU J061705.3+222127, in the supernova remnant (SNR) IC 443 reveal an ∼5″ radius ring-like structure surrounding the pulsar and a jet-like feature oriented roughly north–south across the ring and through the pulsar's location at 06{sup h}17{sup m}5.{sup s}200 + 22°21′27.″52 (J2000.0 coordinates). The observations further confirm that (1) the spectrum and flux of the central object are consistent with a rotation-powered pulsar, (2) the non-thermal spectrum and morphology of the surrounding nebula are consistent with a pulsar wind, and (3) the spectrum at greater distances is consistent with thermal emission from the SNR. The cometary shape of the nebula, suggesting motion toward the southwest, appears to be subsonic: There is no evidence either spectrally or morphologically for a bow shock or contact discontinuity; the nearly circular ring is not distorted by motion through the ambient medium; and the shape near the apex of the nebula is narrow. Comparing this observation with previous observations of the same target, we set a 99% confidence upper limit to the proper motion of CXOU J061705.3+222127 to be less than 44 mas yr{sup −1} (310 km s{sup −1} for a distance of 1.5 kpc), with the best-fit (but not statistically significant) projected direction toward the west.

  19. High star formation rates in turbulent atomic-dominated gas in the interacting galaxies IC 2163 and NGC 2207

    CERN Document Server

    Elmegreen, Bruce G; Bournaud, Frederic; Elmegreen, Debra Meloy; Struck, Curtis; Brinks, Elias; Juneau, Stephanie

    2016-01-01

    CO observations of the interacting galaxies IC 2163 and NGC 2207 are combined with HI, Halpha and 24 microns to study the star formation rate (SFR) surface density as a function of the gas surface density. More than half of the high SFR regions are HI dominated. When compared to other galaxies, these HI-dominated regions have excess SFRs relative to their molecular gas surface densities but normal SFRs relative to their total gas surface densities. The HI-dominated regions are mostly located in the outer part of NGC 2207, where the HI velocity dispersion is high, 40 - 50 km/s. We suggest that the star-forming clouds in these regions have envelopes at lower densities than normal, making them predominantly atomic, and cores at higher densities than normal because of the high turbulent Mach numbers. This is consistent with theoretical predictions of a flattening in the density probability distribution function for compressive, high Mach number turbulence.

  20. High diagnostic value of second generation CSF RT-QuIC across the wide spectrum of CJD prions.

    Science.gov (United States)

    Franceschini, Alessia; Baiardi, Simone; Hughson, Andrew G; McKenzie, Neil; Moda, Fabio; Rossi, Marcello; Capellari, Sabina; Green, Alison; Giaccone, Giorgio; Caughey, Byron; Parchi, Piero

    2017-09-06

    An early and accurate in vivo diagnosis of rapidly progressive dementia remains challenging, despite its critical importance for the outcome of treatable forms, and the formulation of prognosis. Real-Time Quaking-Induced Conversion (RT-QuIC) is an in vitro assay that, for the first time, specifically discriminates patients with prion disease. Here, using cerebrospinal fluid (CSF) samples from 239 patients with definite or probable prion disease and 100 patients with a definite alternative diagnosis, we compared the performance of the first (PQ-CSF) and second generation (IQ-CSF) RT-QuIC assays, and investigated the diagnostic value of IQ-CSF across the broad spectrum of human prions. Our results confirm the high sensitivity of IQ-CSF for detecting human prions with a sub-optimal sensitivity for the sporadic CJD subtypes MM2C and MM2T, and a low sensitivity limited to variant CJD, Gerstmann-Sträussler-Scheinker syndrome and fatal familial insomnia. While we found no difference in specificity between PQ-CSF and IQ-CSF, the latter showed a significant improvement in sensitivity, allowing prion detection in about 80% of PQ-CSF negative CJD samples. Our results strongly support the implementation of IQ-CSF in clinical practice. By rapidly confirming or excluding CJD with high accuracy the assay is expected to improve the outcome for patients and their enrollment in therapeutic trials.

  1. High dielectric constant materials and their application to IC gate stack systems

    Institute of Scientific and Technical Information of China (English)

    TU; Hailing

    2005-01-01

    High dielectric constant (high-k) materials are vital tothe nanoelectronic devices.The paper reviews research development of high-k materials, describes a variety of manufacture technologies and discusses the application of the gate stack systems to non-classical device structures.

  2. 12.5 Gbps 1:16 DEMUX IC with high speed synchronizing circuits

    Institute of Scientific and Technical Information of China (English)

    Zhou Lei; Wu Danyu; Chen Jianwu; Jin Zhi; Liu Xinyu

    2011-01-01

    A 12.5 Gbps 1∶16 demultiplexer(DEMUX)integrated circuit is presented for multi-channel high-speed data transmission.A novel high-speed synchronizing technique is proposed and integrated in this DEMUX chip.Compared with conventional synchronizing techniques,the proposed method largely simplifies the system configuration.The experimental result demonstrates that the proposed circuit is effective in two-channel synchronization under a clock frequency of 12.5 GHz.The circuit is realized using 1 μm GaAs heterojunction bipolar transistor technology with die area of 2.3 × 2.3 mm2.

  3. VCSEL-based, high-speed, in situ TDLAS for in-cylinder water vapor measurements in IC engines.

    Science.gov (United States)

    Witzel, O; Klein, A; Meffert, C; Wagner, S; Kaiser, S; Schulz, C; Ebert, V

    2013-08-26

    We report the first application of a vertical-cavity surfaceemitting laser (VCSEL) for calibration- and sampling-free, high-speed, in situ H2O concentration measurements in IC engines using direct TDLAS (tunable diode laser absorption spectroscopy). Measurements were performed in a single-cylinder research engine operated under motored conditions with a time resolution down to 100 μs (i.e., 1.2 crank angle degrees at 2000 rpm). Signal-to-noise ratios (1σ) up to 29 were achieved, corresponding to a H2O precision of 0.046 vol.% H2O or 39 ppm · m. The modulation frequency dependence of the performance was investigated at different engine operating points in order to quantify the advantages of VCSEL against DFB lasers.

  4. Numerical and Experimental Dynamic Analysis of IC Engine Test Beds Equipped with Highly Flexible Couplings

    Directory of Open Access Journals (Sweden)

    M. Cocconcelli

    2017-01-01

    Full Text Available Driveline components connected to internal combustion engines can be critically loaded by dynamic forces due to motion irregularity. In particular, flexible couplings used in engine test rig are usually subjected to high levels of torsional oscillations and time-varying torque. This could lead to premature failure of the test rig. In this work an effective methodology for the estimation of the dynamic behavior of highly flexible couplings in real operational conditions is presented in order to prevent unwanted halts. The methodology addresses a combination of numerical models and experimental measurements. In particular, two mathematical models of the engine test rig were developed: a torsional lumped-parameter model for the estimation of the torsional dynamic behavior in operative conditions and a finite element model for the estimation of the natural frequencies of the coupling. The experimental campaign addressed torsional vibration measurements in order to characterize the driveline dynamic behavior as well as validate the models. The measurements were achieved by a coder-based technique using optical sensors and zebra tapes. Eventually, the validated models were used to evaluate the effect of design modifications of the coupling elements in terms of natural frequencies (torsional and bending, torsional vibration amplitude, and power loss in the couplings.

  5. IC Treatment: Antidepressants

    Science.gov (United States)

    ... restrictions than MAOIs. Studies Testing Antidepressants to Treat IC With the exception of the TCA called amitriptyline ( ... when you have IC). Antidepressants Used to Treat IC Some of the current antidepressants your physician may ...

  6. Children and IC

    Science.gov (United States)

    ... well as his or her teachers, principal, school nurse, gym teacher, etc. Your child’s symptoms may be ... Out IC How to Schedule an IC Advocacy District Visit IC Advocates in Action Spur Research Funding ...

  7. High-speed digital ICs - A comparison between silicon and GaAs

    Science.gov (United States)

    Ricco, Bruno

    1986-06-01

    High electron mobility and semi-insulating characteristics make GaAs a semiconductor material ideally suited for very fast logics. Nevertheless, for such purposes it must compete with the fully mature LSI and VLSI technologies of silicon. The choice depends on applications and technology options. If MESFETs are rated against Si MOSFETs and bipolar transistors, the scale of circuit integration plays a fundamental role. For fewer than a few hundred gates per chip, GaAs can provide circuits that are two to four times faster although the cost per bit is significantly higher; thus GaAs circuits seem attractive only for required performances above a few gigahertz (beyond the reach of silicon devices). The brighter perspectives for GaAs come from the potential of heterostructure devices which are under development and showing great promise. Sophisticated processing steps (such as molecular beam epitaxy) are still under development and still need to be assessed regarding their viability for circuit mass production. Various logics are compared.

  8. GalICS V Low and high order clustering in mock SDSS's

    CERN Document Server

    Blaizot, J P; Budavari, T; Colombi, S; Devriendt, J E G; Guiderdoni, B; Pan, J; Szalay, A S; Szapudi, I

    2006-01-01

    [Abridged] We use mock catalogues based on the GALICS model (Hatton et al. 03) to explore the nature of galaxy clustering observed in the SDSS. We measure low and high order angular clustering statistic from these mock catalogues, after selecting galaxies the same way as for observations, and compare them directly to estimates from SDSS data. Note that we also present measurements of S3-S5 on the SDSS DR1. We find that our model is in general good agreement with observations in the scale/luminosity range where we can trust the predictions. This range is found to be limited (i) by the size of the dark matter simulation used -- which introduces finite volume effects at large scales -- and by the mass resolution of this simulation -- which introduces incompleteness at apparent magnitudes fainter than $r\\sim 20$. We then focus on the small scale clustering properties of galaxies and investigate the behaviour of three different prescriptions for positioning galaxies within haloes of dark matter. We show that galax...

  9. High-Temperature Capacitor Polymer Films

    Science.gov (United States)

    Tan, Daniel; Zhang, Lili; Chen, Qin; Irwin, Patricia

    2014-12-01

    Film capacitor technology has been under development for over half a century to meet various applications such as direct-current link capacitors for transportation, converters/inverters for power electronics, controls for deep well drilling of oil and gas, direct energy weapons for military use, and high-frequency coupling circuitry. The biaxially oriented polypropylene film capacitor remains the state-of-the-art technology; however, it is not able to meet increasing demand for high-temperature (>125°C) applications. A number of dielectric materials capable of operating at high temperatures (>140°C) have attracted investigation, and their modifications are being pursued to achieve higher volumetric efficiency as well. This paper highlights the status of polymer dielectric film development and its feasibility for capacitor applications. High-temperature polymers such as polyetherimide (PEI), polyimide, and polyetheretherketone were the focus of our studies. PEI film was found to be the preferred choice for high-temperature film capacitor development due to its thermal stability, dielectric properties, and scalability.

  10. Aluminum nitride for heatspreading in RF IC's

    Science.gov (United States)

    La Spina, L.; Iborra, E.; Schellevis, H.; Clement, M.; Olivares, J.; Nanver, L. K.

    2008-09-01

    To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC's, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 μm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.

  11. Multi-mode controller IC for soft-switched flyback converter with high efficiency over the entire load range

    Institute of Scientific and Technical Information of China (English)

    Hai CHEN; Meng-lian ZHAO; Xiao-bo WU; Xiao-lang YAN

    2008-01-01

    This paper presents a multi-mode control scheme for a soft-switched flyback converter to achieve high efficiency and excellent load regulation over the entire load range. At heavy load, critical conduction mode with valley switching (CCMVS) is employed to realize soft switching so as to reduce turn-on loss of power switch as well as conducted electromagnetic interference (EMI). At light load, the converter operates in discontinuous conduction mode (DCM) with valley switching and adaptive off-time control (AOT) to limit the switching frequency range and maintain load regulation. At extremely light load or in standby mode,burst mode operation is adopted to provide low power consumption through reducing both switching frequency and static power dissipation of the controller. The multi-mode control is implemented by an oscillator whose pulse duration is adjusted by output feedback. An accurate valley switching control circuit guarantees the minimum turn-on voltage drop of power switch. The pro-totype of the controller IC was fabricated in a 1.5um BiCMOS process and applied to a 310 V/20 V, 90 W flyback DC/DC converter circuitry. Experimental results showed that all expected functions were realized successfully. The flyback converter achieved a high efficiency of over 80% from full load down to 2.5 W, with the maximum reaching 88.8%, while the total power consumption in standby mode was about 300 mW.

  12. ALMA reveals optically thin, highly excited CO gas in the jet-driven winds of the galaxy IC5063

    CERN Document Server

    Dasyra, K M; Oosterloo, T; Oonk, J B R; Morganti, R; Salome, P; Vlahakis, N

    2016-01-01

    Using CO (4-3) and (2-1) Atacama Large Millimeter Array (ALMA) data, we prove that the molecular gas in the jet-driven winds of the galaxy IC5063 is more highly excited than the rest of the molecular gas in the disk of the same galaxy. On average, the CO (4-3) / CO (2-1) flux ratio is 1 for the disk and 5 for the jet accelerated or impacted gas. Spatially-resolved maps reveal that in regions associated with winds, the CO (4-3) / CO (2-1) flux ratio significantly exceeds the upper limit of 4 for optically thick gas. It frequently takes values between 5 and 11, and it occasionally further approaches the upper limit of 16 for optically thin gas. Excitation temperatures of 30-100 K are common for the molecules in these regions. If all of the outflowing molecular gas is optically thin, at 30-50 K, then its mass is 2*10^6 M_sun. This lower mass limit is an order of magnitude below the mass derived from the CO (2-1) flux in case of optically thick gas. Our result suggests that molecular wind masses may be overestima...

  13. Design and performance of clock-recovery GaAs ICs for high-speed optical communication systems

    Science.gov (United States)

    Imai, Yuhki; Sano, Eiichi; Nakamura, Makoto; Ishihara, Noboru; Kikuchi, Hiroyuki; Ono, Takashi

    1993-05-01

    Design and performance of clock-recovery GaAs ICs are presented. Four kinds of ICs were developed: a limiting amplifier, a tuning amplifier, a rectifier, and a differentiator. The cascaded limiting amplifier together with a tuning amplifier achieved a 58-dB gain and a 10-degree phase deviation with 20-dB input dynamic range at 10 GHz. A clock-recovery circuit successfully extracts a low-jitter 10-GHz clock signal of 1-dBm constant power from 10-Gb/s NRZ pseudorandom bit streams using a pulse pattern generator.

  14. Highly stressed carbon film coatings on silicon potential applications

    CERN Multimedia

    Sharda, T

    2002-01-01

    The fabrication of highly stressed and strongly adhered nanocrystalline diamond films on Si substrates is presented. A microwave plasma CVD method with controlled and continuous bias current density was used to grow the films. The stress/curvature of the films can be varied and controlled by altering the BCD. Potential applications for these films include particle physics and x-ray optics.

  15. IC Treatment: Surgical Procedures

    Science.gov (United States)

    ... IC Epidemiology (RICE) Study Boston Area Community Health (BACH) Survey ICA Pilot Research Program Funding Opportunities Clinical ... IC Epidemiology (RICE) Study Boston Area Community Health (BACH) Survey ICA Pilot Research Program Funding Opportunities Clinical ...

  16. IC Treatment: Antihistamines

    Science.gov (United States)

    ... IC Epidemiology (RICE) Study Boston Area Community Health (BACH) Survey ICA Pilot Research Program Funding Opportunities Clinical ... IC Epidemiology (RICE) Study Boston Area Community Health (BACH) Survey ICA Pilot Research Program Funding Opportunities Clinical ...

  17. Men and IC

    Science.gov (United States)

    ... IC Epidemiology (RICE) Study Boston Area Community Health (BACH) Survey ICA Pilot Research Program Funding Opportunities Clinical ... IC Epidemiology (RICE) Study Boston Area Community Health (BACH) Survey ICA Pilot Research Program Funding Opportunities Clinical ...

  18. IC: Frequently Asked Questions

    Science.gov (United States)

    ... IC Epidemiology (RICE) Study Boston Area Community Health (BACH) Survey ICA Pilot Research Program Funding Opportunities Clinical ... IC Epidemiology (RICE) Study Boston Area Community Health (BACH) Survey ICA Pilot Research Program Funding Opportunities Clinical ...

  19. Design of a control system for a macro-micro dual-drive high acceleration high precision positioning stage for IC packaging

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    A macro-micro dual-drive positioning system showing good potential for high acceleration and high precision positioning required in IC packaging applications is devised in this paper. The dual-drive positioning stage uses a VCM (voice coil motor) driven macro positioning stage and a PZT piezo-electric driven micro positioning stage. The coupling characteristics of the system are analyzed to produce a control structure with a micro positioning stage that can dynamically compensate for the positioning error produced by the macro positioning stage. Models of the two positioning stages are described. The models cover both the mechanism and the actuator. For the macro positioning stage, friction characteristics are taken into account, and a controller with an LQG (linear-quadratic-Gaussian) control algorithm combining a feed-forward compensation algorithm is derived. A PID controller is used to control the micro positioning stage. Detailed designs are derived for the proposed approach, and the performance is validated by simulation.

  20. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  1. Study of a Particle Based Films Cure Process by High-Frequency Eddy Current Spectroscopy

    Directory of Open Access Journals (Sweden)

    Iryna Patsora

    2016-12-01

    Full Text Available Particle-based films are today an important part of various designs and they are implemented in structures as conductive parts, i.e., conductive paste printing in the manufacture of Li-ion batteries, solar cells or resistive paste printing in IC. Recently, particle based films were also implemented in the 3D printing technique, and are particularly important for use in aircraft, wind power, and the automotive industry when incorporated onto the surface of composite structures for protection against damages caused by a lightning strike. A crucial issue for the lightning protection area is to realize films with high homogeneity of electrical resistance where an in-situ noninvasive method has to be elaborated for quality monitoring to avoid undesirable financial and time costs. In this work the drying process of particle based films was investigated by high-frequency eddy current (HFEC spectroscopy in order to work out an automated in-situ quality monitoring method with a focus on the electrical resistance of the films. Different types of particle based films deposited on dielectric and carbon fiber reinforced plastic substrates were investigated in the present study and results show that the HFEC method offers a good opportunity to monitor the overall drying process of particle based films. Based on that, an algorithm was developed, allowing prediction of the final electrical resistance of the particle based films throughout the drying process, and was successfully implemented in a prototype system based on the EddyCus® HFEC device platform presented in this work. This prototype is the first solution for a portable system allowing HFEC measurement on huge and uneven surfaces.

  2. An automated, high-throughput, 384 well Cytochrome P450 cocktail IC50 assay using a rapid resolution LC-MS/MS end-point.

    Science.gov (United States)

    Youdim, Kuresh A; Lyons, Richard; Payne, Leon; Jones, Barry C; Saunders, Kenneth

    2008-09-10

    The current study focused on the development of an automated IC50 cocktail assay in a miniaturized 384 well assay format. This was developed in combination with a significantly shorter high pressure liquid chromatography (HPLC) separation and liquid chromatography-mass spectrometry (LC-MS/MS) run-time; than those currently reported in the literature. The 384-well assay used human liver microsomes in conjunction with a cocktail of probe substrates metabolized by the five major CYPs (tacrine for CYP1A2, diclofenac for CYP2C9, (S)-mephenytoin for CYP2C19, dextromethorphan for CYP2D6 and midazolam for CYP3A4). To validate the usefulness of the automated and analytical methodologies, IC50 determinations were performed for a series of test compounds known to exhibit inhibition across these five major P450s. Eight compounds (sertraline, disulfuram, ticlopidine fluconazole, fluvoxamine, ketoconazole, miconazole, paroxetine, flunitrazepam) were studied as part of a cocktail assay, and against each CYPs individually. The data showed that the IC50s generated with cocktail incubations did not differ to a great extent from those obtained in the single probe experiments and hence unlikely to significantly influence the predicted clinical DDI risk. In addition the present method offered a significant advantage over some of the existing cocktail analytical methodology in that separation can be achieved with run times as short as 1 min without compromising data integrity. Although numerous studies have been reported to measure CYP inhibition in a cocktail format the need to support growing discovery libraries not only relies on higher throughput assays but quicker analytical run times. The current study reports a miniaturized high-throughput cocktail IC50 assay, in conjunction with a robust, rapid resolution LC-MS/MS end-point offered increased sample throughput without compromising analytical sensitivity or analyte resolution.

  3. Minimizing wafer defectivity during high-temperature baking of organic films in 193nm lithography

    Science.gov (United States)

    Randall, Mai; Longstaff, Christopher; Ueda, Kenichi; Nicholson, Jim; Winter, Thomas

    2006-03-01

    Demands for continued defect reduction in 300mm IC manufacturing is driving process engineers to examine all aspects of the apply process for improvement. Process engineers, and their respective tool sets, are required to process films at temperatures above the boiling point of the casting solvents. This can potentially lead to the sublimation of the film chemical components. The current methods used to minimize wafer defectivity due to bake residues include frequent cleaning of bake plate modules and surrounding equipment, process optimization, and hardware improvements until more robust chemistries are available. IBM has evaluated the Tokyo Electron CLEAN TRACK TM ACT TM 12 high exhaust high temperature hotplate (HHP) lid to minimize wafer level contamination due to the outgasing of a bottom anti-reflective coating (BARC) films during the high temperature bake process. Goal was to minimize airborne contamination (particles in free space), reduce hotplate contamination build up, and ultimately reduce defects on the wafer. This evaluation was performed on a 193nm BARC material. Evaluation data included visual hardware inspections, airborne particle counting, relative thickness build up measurements on hotplate lids, wafer level defect measurements, and electrical open fail rate. Film coat thickness mean and uniformity were also checked to compare the high exhaust HHP with the standard HHP lid. Chemical analysis of the HHP module residue was performed to identify the source material. The work will quantify potential cost savings achieved by reducing added wafer defects during processing and extending PM frequency for equipment cleaning.

  4. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    Science.gov (United States)

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  5. Design of a control system for a macro-micro dual-drive high acceleration high precision positioning stage for IC packaging

    Institute of Scientific and Technical Information of China (English)

    LIU YanJie; LI Teng; SUN LiNing

    2009-01-01

    A macro-micro dual-drive positioning system showing good potential for high acceleration and high precision positioning required in IC packaging applications is devised in this paper. The dual-drive positioning stage uses a VCM (voice coil motor) driven macro positioning stage and a PZT piezo-electric driven micro positioning stage. The coupling characteristics of the system are analyzed to produce a control structure with a micro positioning stage that can dynamically compensate for the positioning error produced by the macro positioning stage. Models of the two positioning stages are described. The models cover both the mechanism and the actuator. For the macro positioning stage,friction characteristics are taken into account, and a controller with an LQG (linear-quadratic-Gaussian)control algorithm combining a feed-forward compensation algorithm is derived. A PID controller is used to control the micro positioning stage. Detailed designs are derived for the proposed approach,and the performance is validated by simulation.

  6. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  7. Improved thermal stability of polylactic acid (PLA) composite film via PLA-β-cyclodextrin-inclusion complex systems.

    Science.gov (United States)

    Byun, Youngjae; Rodriguez, Katia; Han, Jung H; Kim, Young Teck

    2015-11-01

    The effects of the incorporation of PLA-β-cyclodextrin-inclusion complex (IC) and β-cyclodextrin (β-CD) on biopolyester PLA films were investigated. Thermal stability, surface morphology, barrier, and mechanical properties of the films were measured at varying IC (1, 3, 5, and 7%) and β-CD (1 and 5%) concentrations. The PLA-IC-composite films (IC-PLA-CFs) showed uniform morphological structure, while samples containing β-CD (β-CD-PLA-CFs) showed high agglomeration of β-CD due to poor interfacial interaction between β-CD and PLA moieties. According to the thermal property analysis, the 5% IC-PLA-CFs showed 6.6 times lower dimensional changes (6.5%) at the temperature range of 20-80°C than that of pure PLA film (43.0%). The increase of IC or β-CD content in the PLA-composite films shifted the glass transition and crystallization temperature to higher temperature regions. The crystallinity of both composite films improved by increasing IC or β-CD content. Both composite films had higher oxygen and water vapor permeability as IC or β-CD content increased in comparison to pure PLA film. All the composite films had less flexibility and lower tensile strength than the pure PLA film. In conclusion, this study shows that the IC technique is valuable to improve the thermal expansion stability of PLA-based films.

  8. Use of thin films in high-temperature superconducting bearings.

    Energy Technology Data Exchange (ETDEWEB)

    Hull, J. R.; Cansiz, A.

    1999-09-30

    In a PM/HTS bearing, locating a thin-film HTS above a bulk HTS was expected to maintain the large levitation force provided by the bulk with a lower rotational drag provided by the very high current density of the film. For low drag to be achieved, the thin film must shield the bulk from inhomogeneous magnetic fields. Measurement of rotational drag of a PM/HTS bearing that used a combination of bulk and film HTS showed that the thin film is not effective in reducing the rotational drag. Subsequent experiments, in which an AC coil was placed above the thin-film HTS and the magnetic field on the other side of the film was measured, showed that the thin film provides good shielding when the coil axis is perpendicular to the film surface but poor shielding when the coil axis is parallel to the surface. This is consistent with the lack of reduction in rotational drag being due to a horizontal magnetic moment of the permanent magnet. The poor shielding with the coil axis parallel to the film surface is attributed to the aspect ratio of the film and the three-dimensional nature of the current flow in the film for this coil orientation.

  9. High flux film and transition boiling

    Science.gov (United States)

    Witte, L. C.

    1993-02-01

    An investigation was conducted on the potential for altering the boiling curve through effects of high velocity and high subcooling. Experiments using water and Freon-113 flowing over cylindrical electrical heaters in crossflow were made to see how velocity and subcooling affect the boiling curve, especially the film and transition boiling regions. We sought subcooling levels down to near the freezing points of these two liquids to prove the concept that the critical heat flux and the minimum heat flux could be brought together, thereby averting the transition region altogether. Another emphasis was to gain insight into how the various boiling regions could be represented mathematically on various parts of the heating surface. Motivation for the research grew out of a realization that the effects of very high subcooling and velocity might be to avert the transition boiling altogether so that the unstable part of the boiling curve would not limit the application of high flux devices to temperatures less than the burnout temperatures. Summaries of results from the study are described. It shows that the potential for averting the transition region is good and points the way to further research that is needed to demonstrate the potential.

  10. IC Associated Conditions

    Science.gov (United States)

    ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Newly Diagnosed Toolkit IC Awareness Toolkit Know ... Bowel Syndrome Lupus Pelvic Floor Dysfunction Pudendal Neuralgia Sjogren’s Syndrome Vulvodynia Click to learn more about these and ...

  11. LD to IC

    CERN Multimedia

    Association du personnel

    2010-01-01

    LC to IC – Publication of posts: Following the publication of new LD to IC posts, we regret that a large number of post descriptions are not available in both CERN official languages, English and French. Consequently, the Staff Association has decided to provide assistance to those who need it with the translation of one or more posts of interest. To do this, please contact the Staff Association secretariat, tel. 72819 or 72761 or 74224.

  12. Interfacial Behavior of Sulfur and Yttrium in Yttrium Modified Ni3Al-Based Alloy IC6 during High Temperature Oxidation Process

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The interfacial behavior of sulfur and yttrium in the yttrium-modified Ni3Al-based alloy IC6 during oxidation at 1100 ℃ was analyzed by X-ray line scan of electron probe microstructural analysis(EPMA). The results show that the migration and segregation of sulfur to the interface between oxide scale and the substrate at high temperature is retarded owing to the presence of yttrium. This is attributed to the desulfurization by yttrium in the melt and the trapping of sulfur by yttrium rich phases during oxidation, which leads to improving the coherence between oxide scale and substrate. Another reason of increasing the high temperature oxidation resistance of alloy IC6 by the addition of yttrium is that yttrium migrates to the grain boundaries of oxides during oxidation and hence improve their strength. This results in the transformation of the oxide scale spallation cracks from intergranular cracks for alloy without yttrium to transgranular ones for yttrium-modified alloy.

  13. High Precision Metal Thin Film Liftoff Technique

    Science.gov (United States)

    Brown, Ari D. (Inventor); Patel, Amil A. (Inventor)

    2015-01-01

    A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.

  14. Tech-X Corporation releases simulation code for solving complex problems in plasma physics : VORPAL code provides a robust environment for simulating plasma processes in high-energy physics, IC fabrications and material processing applications

    CERN Multimedia

    2005-01-01

    Tech-X Corporation releases simulation code for solving complex problems in plasma physics : VORPAL code provides a robust environment for simulating plasma processes in high-energy physics, IC fabrications and material processing applications

  15. High-Frame-Rate Oil Film Interferometry

    CERN Document Server

    White, Jonathan C; Chen, John

    2010-01-01

    The fluid dynamics video to which this abstract relates contains visualization of the response of a laminar boundary layer to a sudden puff from a small hole. The boundary layer develops on a flat plate in a wind tunnel; the hole is located at a streamwise Reynolds number of 100,000. The visualization of the boundary layer response is accomplished using interferometry of a transparent, thin film of oil placed on the surface immediately downstream of the hole and with its leading edge perpendicular to the direction of flow. Through lubrication theory, it is understood that the rate of change of the spacing of the interference fringes is proportional to the skin friction at any instant. For reference, a small disk-shaped protrusion of the type often used to trip the boundary layer in wind model tunnel testing is also shown. Three cases with different puff strengths are included. Using a high-speed commercial camera, frame rates in excess of 1000/sec have been recorded; the video shown here was taken at 24 frame...

  16. Highly stretchable wrinkled gold thin film wires

    Science.gov (United States)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-02-01

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  17. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  18. Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

    Science.gov (United States)

    Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

    2016-05-04

    Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

  19. Three-dimensional IC trends

    Energy Technology Data Exchange (ETDEWEB)

    Akasaka, Y.

    1986-12-01

    VLSI will be reaching to the limit of minimization in the 1990s, and after that, further increase of packing density or functions might depend on the vertical integration technology. Three-dimensional (3-D) integration is expected to provide several advantages, such as 1) parallel processing, 2) high-speed operation, 3) high packing density, and 4) multifunctional operation. Basic technologies of 3-D IC are to fabricate SOI layers and to stack them monolithically. Crystallinity of the recrystallized layer in SOI has increasingly become better, and very recently crystal-axis controlled, defect-free single-crystal areas has been obtained in chip size level by laser recystallization technology. Some basic functional models showing the concept or image of a future 3-D IC were fabricated in two or three stacked active layers. Some other proposals of subsystems in the application of 3-D structure, and the technical issues for realizing practical 3-D IC, i.e., the technology for fabricating high-quality SOI crystal on complicated surface topology, crosstalk of the signals between the stacked layers, total power consumption and cooling of the chip, are also discussed in this paper.

  20. Cathodoluminescence study of thin films of high Tc superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Barkay, Z.; Azoulay, J.; Lereah, Y.; Dai, U.; Hess, N.; Racah, D.; Gruenbaum, E.; Deutscher, G. (School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, 69978 Ramat Aviv (Israel))

    1990-10-22

    Cathodoluminescence (CL) of thin films of high {ital T}{sub {ital c}} superconductors was studied in the scanning electron microscope. The depth and the lateral locations of the different phases can be revealed. In thin films, unlike the bulk superconductors, the CL information can be obtained either from the film itself or the substrate by varying the primary beam energy. At high beam energy, substrate defects and slight thickness variations of a single high {ital T}{sub {ital c}} phase are observed. The resolution of the CL measurements improves at low temperatures.

  1. Processing and characterization of high porosity aerogel films

    Energy Technology Data Exchange (ETDEWEB)

    Hrubesh, L.W.; Poco, J.F.

    1994-11-22

    Aerogels are highly porous solids having unique morphology among materials because both the pores and particles making up the material have sizes less than wavelengths of visible light. Such a unique morphology modifies the normal molecular transport mechanisms within the material, resulting in exceptional thermal, acoustical, mechanical, and electrical properties. For example, aerogels have the lowest measured thermal conductivity and dielectric constant for any solid material. Special methods are required to make aerogel films with high porosity. In this paper, we discuss the special conditions needed to fabricate aerogel films having porosities greater than 75% and we describe methods of processing inorganic aerogel films having controllable thicknesses in the range 0.5 to 200 micrometers. We report methods and results of characterizing the films including thickness, refractive index, density (porosity), and dielectric constant. We also discuss results of metallization and patterning on the aerogel films for applications involving microminiature electronics and thermal detectors.

  2. Polyelectrolyte Coacervates Deposited as High Gas Barrier Thin Films.

    Science.gov (United States)

    Haile, Merid; Sarwar, Owais; Henderson, Robert; Smith, Ryan; Grunlan, Jaime C

    2017-01-01

    Multilayer coatings consisting of oppositely charged polyelectrolytes have proven to be extraordinarily effective oxygen barriers but require many processing steps to fabricate. In an effort to prepare high oxygen barrier thin films more quickly, a polyelectrolyte complex coacervate composed of polyethylenimine and polyacrylic acid is prepared. The coacervate fluid is applied as a thin film using a rod coating process. With humidity and thermal post-treatment, a 2 µm thin film reduces the oxygen transmission rate of 0.127 mm poly(ethylene terephthalate) by two orders of magnitude, rivalling conventional oxygen barrier technologies. These films are fabricated in ambient conditions using low-cost, water-based solutions, providing a tremendous opportunity for single-step deposition of polymeric high barrier thin films.

  3. High flux film and transition boiling

    Energy Technology Data Exchange (ETDEWEB)

    Witte, L.C.

    1990-01-01

    This report is a bench-scale experiment on transition boiling. The author gives a detailed description on experimental apparatus and conditions. The visual observed boiling phenomena; nucleate boiling and film boiling, and the effect of heat transfer are also elucidated. 10 refs., 11 figs., 1 tab.

  4. Piezoelectric films for high frequency ultrasonic transducers in biomedical applications.

    Science.gov (United States)

    Zhou, Qifa; Lau, Sienting; Wu, Dawei; Shung, K Kirk

    2011-02-01

    Piezoelectric films have recently attracted considerable attention in the development of various sensor and actuator devices such as nonvolatile memories, tunable microwave circuits and ultrasound transducers. In this paper, an overview of the state of art in piezoelectric films for high frequency transducer applications is presented. Firstly, the basic principles of piezoelectric materials and design considerations for ultrasound transducers will be introduced. Following the review, the current status of the piezoelectric films and recent progress in the development of high frequency ultrasonic transducers will be discussed. Then details for preparation and structure of the materials derived from piezoelectric thick film technologies will be described. Both chemical and physical methods are included in the discussion, namely, the sol-gel approach, aerosol technology and hydrothermal method. The electric and piezoelectric properties of the piezoelectric films, which are very important for transducer applications, such as permittivity and electromechanical coupling factor, are also addressed. Finally, the recent developments in the high frequency transducers and arrays with piezoelectric ZnO and PZT thick film using MEMS technology are presented. In addition, current problems and further direction of the piezoelectric films for very high frequency ultrasound application (up to GHz) are also discussed.

  5. Development of Thin Film Ceramic Thermocouples for High Temperature Environments

    Science.gov (United States)

    Wrbanek, John D.; Fralick, Gustave C.; Farmer, Serene C.; Sayir, Ali; Blaha, Charles A.; Gonzalez, Jose M.

    2004-01-01

    The maximum use temperature of noble metal thin film thermocouples of 1100 C (2000 F) may not be adequate for use on components in the increasingly harsh conditions of advanced aircraft and next generation launch technology. Ceramic-based thermocouples are known for their high stability and robustness at temperatures exceeding 1500 C, but are typically found in the form of rods or probes. NASA Glenn Research Center is investigating the feasibility of ceramics as thin film thermocouples for extremely high temperature applications to take advantage of the stability and robustness of ceramics and the non-intrusiveness of thin films. This paper will discuss the current state of development in this effort.

  6. An Integrated Wireless Power Management and Data Telemetry IC for High-Compliance-Voltage Electrical Stimulation Applications.

    Science.gov (United States)

    Zhao, Jianming; Yao, Lei; Xue, Rui-Feng; Li, Peng; Je, Minkyu; Xu, Yong Ping

    2016-02-01

    This paper describes a 13.56-MHz wireless power recovery system with bidirectional data link for high-compliance-voltage neural/muscle stimulator. The power recovery circuit includes a 2-stage rectifier, 2 LDOs and a high voltage charge pump to provide 3 DC outputs: 1.8 V, 3.3 V and 20 V for the stimulator. A 2-stage time division based rectifier is proposed to provide 3 DC outputs simultaneously. It improves the power efficiency without introducing any impact on the forward data recovery. The 20 V output is generated by a modified low ripple charge pump that reduces the ripple voltage by 40%. The power management system shows 49% peak power efficiency. The data link includes a clock and data recovery (CDR) circuit and a load shift keying (LSK) modulator for bidirectional data telemetry. The forward and backward data rates of the data telemetry are 61.5 kbps and 33.3 kbps, respectively. In addition, a power monitor circuit for closed-loop power control is implemented. The whole system has been fabricated in a 24 V HV LDMOS option 1.8 μ m CMOS process, occupying a core area of around 3.5 mm (2).

  7. Companding technique for high dynamic range measurements using Gafchromic films

    Energy Technology Data Exchange (ETDEWEB)

    Van den Heuvel, Frank; Crijns, Wouter; Defraene, Gilles [Department of Experimental Radiotherapy, Catholic University of Leuven, Leuven, Belgium B-3000 (Belgium)

    2011-12-15

    Purpose: To introduce a methodology to perform dose measurements using Gafchromic films which can span several decades of dose levels. Methods: The technique is based on a rescaling approach using different films irradiated at different dose levels. This is combined with a registration protocol correcting positioning and scaling factors for each film. The methodology is validated using TLD's for out-of-field doses. Furthermore, two examples are provided using the technique to characterize small sized radiosurgery cones and compared with measurements made with a pinpoint chamber. Results: Excellent agreement with TLD, planning systems and measurement was found. The superior resolution of the film technique was apparent. Conclusions: The authors have introduced a new technique allowing users to quantify very low doses in conjunction with commissioning measurements. The use of film also provides 2D information on beam characteristics in high resolution measurements.

  8. High Critical Current in Metal Organic Derived YBCO Films

    Science.gov (United States)

    2010-10-31

    Contract No. FA9550-07-C-0034 “High Critical Current in Metal Organic Derived YBCO Films” Final Report Prepared for: Dr. Harold...Critical Current in Metal Organic Derived YBCO Films 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT...Project focused on optimization of the Metal Organic Deposition (MOD) process for deposition thick, high critical current YBCO films for use in the

  9. Determination of trace elements in Ethiopian, Vietnamese, and Japanese women using high-resolution IC-PMS.

    Science.gov (United States)

    Tekeste, Zinaye; Amare, Bemnet; Asfaw, Fanaye; Fantahun, Bereket; van Nguyen, Nhien; Nishikawa, Takeshi; Yabutani, Tomoki; Okayasu, Takako; Ota, Fusao; Kassu, Afework

    2015-10-01

    Humans and other living organisms require small quantities of trace elements throughout life. Both insufficient and excessive intakes of trace elements can have negative consequences. However, there is little information on serum level of trace elements in different populations. This study examines serum levels of trace elements in Ethiopian, Japanese, and Vietnamese women. Random samples of healthy women who were referred for routine hospital laboratory examinations in the cities of Hanoi, Sapporo, and Gondar were invited to participate in the study. Serum levels of magnesium, zinc, copper, iron, selenium, and calcium were determined using an inductively coupled plasma mass spectrometer. Furthermore, body mass index of each study participant was determined. The mean ± SD serum concentrations of zinc (μg/dL), copper (μg/dL), iron (μg/dL), selenium (μg/dL) and calcium (mg/dL), respectively, were 76.51 ± 39.16, 152.20 ± 55.37, 385.68 ± 217.95, 9.15 ± 4.21, and 14.18 ± 3.91 in Ethiopian women; 111.49 ± 52.92, 105.86 ± 26.02, 155.09 ± 94.83, 14.11 ± 3.41, and 11.66 ± 2.51 in Vietnamese women; and 60.69 ± 9.76, 107 ± 156, 268 ± 128, 8.33 ± 3.65, and 11.18 ± 0.68 in Japanese participants. Ethiopian women had significantly higher level of serum calcium than Vietnamese and Japanese women (both P 0.05). Furthermore, compared with Japanese women, Ethiopian women had significantly high iron and copper concentrations (P food or soil. Copyright © 2015 Elsevier Inc. All rights reserved.

  10. Cellulose antibody films for highly specific evanescent wave immunosensors

    Science.gov (United States)

    Hartmann, Andreas; Bock, Daniel; Jaworek, Thomas; Kaul, Sepp; Schulze, Matthais; Tebbe, H.; Wegner, Gerhard; Seeger, Stefan

    1996-01-01

    For the production of recognition elements for evanescent wave immunosensors optical waveguides have to be coated with ultrathin stable antibody films. In the present work non amphiphilic alkylated cellulose and copolyglutamate films are tested as monolayer matrices for the antibody immobilization using the Langmuir-Blodgett technique. These films are transferred onto optical waveguides and serve as excellent matrices for the immobilization of antibodies in high density and specificity. In addition to the multi-step immobilization of immunoglobulin G(IgG) on photochemically crosslinked and oxidized polymer films, the direct one-step transfer of mixed antibody-polymer films is performed. Both planar waveguides and optical fibers are suitable substrates for the immobilization. The activity and specificity of immobilized antibodies is controlled by the enzyme-linked immunosorbent assay (ELISA) technique. As a result reduced non-specific interactions between antigens and the substrate surface are observed if cinnamoylbutyether-cellulose is used as the film matrix for the antibody immobilization. Using the evanescent wave senor (EWS) technology immunosensor assays are performed in order to determine both the non-specific adsorption of different coated polymethylmethacrylat (PMMA) fibers and the long-term stability of the antibody films. Specificities of one-step transferred IgG-cellulose films are drastically enhanced compared to IgG-copolyglutamate films. Cellulose IgG films are used in enzymatic sandwich assays using mucine as a clinical relevant antigen that is recognized by the antibodies BM2 and BM7. A mucine calibration measurement is recorded. So far the observed detection limit for mucine is about 8 ng/ml.

  11. Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR)

    Science.gov (United States)

    Arapan, Lilia; Alexieva, Gergana; Avramov, Ivan D.; Radeva, Ekaterina; Strashilov, Vesseline; Katardjiev, Ilia; Yantchev, Ventsislav

    2011-01-01

    The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented. PMID:22163994

  12. Highly mass-sensitive thin film plate acoustic resonators (FPAR).

    Science.gov (United States)

    Arapan, Lilia; Alexieva, Gergana; Avramov, Ivan D; Radeva, Ekaterina; Strashilov, Vesseline; Katardjiev, Ilia; Yantchev, Ventsislav

    2011-01-01

    The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.

  13. Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR

    Directory of Open Access Journals (Sweden)

    Ventsislav Yantchev

    2011-07-01

    Full Text Available The mass sensitivity of thin aluminum nitride (AlN film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.

  14. Recent Developments in High-Temperature Shape Memory Thin Films

    Science.gov (United States)

    Motemani, Y.; Buenconsejo, P. J. S.; Ludwig, A.

    2015-11-01

    High-temperature shape memory alloy (HTSMA) thin films are candidates for development of microactuators with operating temperatures exceeding 100 °C. This article reviews recent advances and developments in the field of HTSMA thin films during the past decade, with focus on the systems Ti-Ni-X (X = Hf, Zr, Pd, Pt and Au), Ti-Ta, and Au-Cu-Al. These actuator films offer a wide range of transformation temperatures, thermal hysteresis, and recoverable strains suitable for high-temperature applications. Promising alloy compositions in the systems Ti-Ni-Hf, Ti-Ni-Pd, Ti-Ni-Au, and Au-Cu-Al are highlighted for further upscaling and development. The remaining challenges as well as prospects for development of HTSMA thin films are also discussed.

  15. Detection of very high energy gamma-ray emission from the Perseus cluster head-tail galaxy IC 310 by the MAGIC telescopes

    CERN Document Server

    Aleksić, J; Antoranz, P; Backes, M; Barrio, J A; Bastieri, D; González, J Becerra; Bednarek, W; Berdyugin, A; Berger, K; Bernardini, E; Biland, A; Blanch, O; Bock, R K; Boller, A; Bonnoli, G; Bordas, P; Tridon, D Borla; Bosch-Ramon, V; Bose, D; Braun, I; Bretz, T; Camara, M; Cañellas, A; Carmona, E; Carosi, A; Colin, P; Colombo, E; Contreras, J L; Cossio, L; Cortina, J; Covino, S; Dazzi, F; De Angelis, A; del Pozo, E De Cea; De Lotto, B; De Maria, M; De Sabata, F; Mendez, C Delgado; Ortega, A Diago; Doert, M; Domínguez, A; Prester, D Dominis; Dorner, D; Doro, M; Elsaesser, D; Errando, M; Ferenc, D; Fonseca, M V; Font, L; López, R J García; Garczarczyk, M; Giavitto, G; Godinović, N; Hadasch, D; Herrero, A; Hildebrand, D; Höhne-Mönch, D; Hose, J; Hrupec, D; Jogler, T; Klepser, S; Krähenbühl, T; Kranich, D; Krause, J; La Barbera, A; Leonardo, E; Lindfors, E; Lombardi, S; Longo, F; López, M; Lorenz, E; Majumdar, P; Makariev, M; Maneva, G; Mankuzhiyil, N; Mannheim, K; Maraschi, L; Mariotti, M; Martínez, M; Mazin, D; Meucci, M; Miranda, J M; Mirzoyan, R; Miyamoto, H; Moldón, J; Moralejo, A; Nieto, D; Nilsson, K; Orito, R; Oya, I; Paoletti, R; Paredes, J M; Partini, S; Pasanen, M; Pauss, F; Pegna, R G; Perez-Torres, M A; Persic, M; Peruzzo, L; Pochon, J; Prada, F; Moroni, P G Prada; Prandini, E; Puchades, N; Puljak, I; Reichardt, I; Reinthal, R; Rhode, W; Ribó, M; Rico, J; Rügamer, S; Saggion, A; Saito, K; Saito, T Y; Salvati, M; Sánchez-Conde, M; Satalecka, K; Scalzotto, V; Scapin, V; Schultz, C; Schweizer, T; Shayduk, M; Shore, S N; Sierpowska-Bartosik, A; Sillanpää, A; Sitarek, J; Sobczynska, D; Spanier, F; Spiro, S; Stamerra, A; Steinke, B; Storz, J; Strah, N; Struebig, J C; Suric, T; Takalo, L; Tavecchio, F; Temnikov, P; Terzić, T; Tescaro, D; Teshima, M; Torres, D F; Vankov, H; Wagner, R M; Weitzel, Q; Zabalza, V; Zandanel, F; Zanin, R; Neronov, A; Pfrommer, C; Pinzke, A; Semikoz, D V

    2015-01-01

    We report on the detection with the MAGIC telescopes of very high energy gamma-rays from IC 310, a head-tail radio galaxy in the Perseus galaxy cluster, observed during the interval November 2008 to February 2010. The Fermi satellite has also detected this galaxy. The source is detected by MAGIC at a high statistical significance of 7.6sigma in 20.6 hr of stereo data. The observed spectral energy distribution is flat with a differential spectral index of -2.00 \\pm 0.14. The mean flux above 300 GeV, between October 2009 and February 2010, (3.1 \\pm 0.5)x10^{-12} cm^{-2} s^{-1}, corresponds to (2.5 \\pm 0.4)% of Crab Nebula units. Only an upper limit, of 1.9% of Crab Nebula units above 300 GeV, was obtained with the 2008 data. This, together with strong hints (>3sigma) of flares in the middle of October and November 2009, implies that the emission is variable. The MAGIC results favour a scenario with the very high energy emission originating from the inner jet close to the central engine. More complicated models ...

  16. Piezoelectric films for high frequency ultrasonic transducers in biomedical applications

    OpenAIRE

    Zhou, Qifa; Lau, Sienting; WU, DAWEI; Shung, K. Kirk

    2011-01-01

    Piezoelectric films have recently attracted considerable attention in the development of various sensor and actuator devices such as nonvolatile memories, tunable microwave circuits and ultrasound transducers. In this paper, an overview of the state of art in piezoelectric films for high frequency transducer applications is presented. Firstly, the basic principles of piezoelectric materials and design considerations for ultrasound transducers will be introduced. Following the review, the curr...

  17. High-mobility ultrathin semiconducting films prepared by spin coating.

    Science.gov (United States)

    Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

    2004-03-18

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  18. High quality digital holographic reconstruction on analog film

    Science.gov (United States)

    Nelsen, B.; Hartmann, P.

    2017-05-01

    High quality real-time digital holographic reconstruction, i.e. at 30 Hz frame rates, has been at the forefront of research and has been hailed as the holy grail of display systems. While these efforts have produced a fascinating array of computer algorithms and technology, many applications of reconstructing high quality digital holograms do not require such high frame rates. In fact, applications such as 3D holographic lithography even require a stationary mask. Typical devices used for digital hologram reconstruction are based on spatial-light-modulator technology and this technology is great for reconstructing arbitrary holograms on the fly; however, it lacks the high spatial resolution achievable by its analog counterpart, holographic film. Analog holographic film is therefore the method of choice for reconstructing highquality static holograms. The challenge lies in taking a static, high-quality digitally calculated hologram and effectively writing it to holographic film. We have developed a theoretical system based on a tunable phase plate, an intensity adjustable high-coherence laser and a slip-stick based piezo rotation stage to effectively produce a digitally calculated hologram on analog film. The configuration reproduces the individual components, both the amplitude and phase, of the hologram in the Fourier domain. These Fourier components are then individually written on the holographic film after interfering with a reference beam. The system is analogous to writing angularly multiplexed plane waves with individual component phase control.

  19. Detection of Very High Energy γ-ray Emission from the Perseus Cluster Head-Tail Galaxy IC 310 by the MAGIC Telescopes

    Science.gov (United States)

    Aleksić, J.; Antonelli, L. A.; Antoranz, P.; Backes, M.; Barrio, J. A.; Bastieri, D.; Becerra González, J.; Bednarek, W.; Berdyugin, A.; Berger, K.; Bernardini, E.; Biland, A.; Blanch, O.; Bock, R. K.; Boller, A.; Bonnoli, G.; Bordas, P.; Borla Tridon, D.; Bosch-Ramon, V.; Bose, D.; Braun, I.; Bretz, T.; Camara, M.; Cañellas, A.; Carmona, E.; Carosi, A.; Colin, P.; Colombo, E.; Contreras, J. L.; Cortina, J.; Cossio, L.; Covino, S.; Dazzi, F.; De Angelis, A.; De Cea del Pozo, E.; De Lotto, B.; De Maria, M.; De Sabata, F.; Delgado Mendez, C.; Diago Ortega, A.; Doert, M.; Domínguez, A.; Dominis Prester, D.; Dorner, D.; Doro, M.; Elsaesser, D.; Errando, M.; Ferenc, D.; Fonseca, M. V.; Font, L.; García López, R. J.; Garczarczyk, M.; Giavitto, G.; Godinović, N.; Hadasch, D.; Herrero, A.; Hildebrand, D.; Höhne-Mönch, D.; Hose, J.; Hrupec, D.; Jogler, T.; Klepser, S.; Krähenbühl, T.; Kranich, D.; Krause, J.; La Barbera, A.; Leonardo, E.; Lindfors, E.; Lombardi, S.; Longo, F.; López, M.; Lorenz, E.; Majumdar, P.; Makariev, M.; Maneva, G.; Mankuzhiyil, N.; Mannheim, K.; Maraschi, L.; Mariotti, M.; Martínez, M.; Mazin, D.; Meucci, M.; Miranda, J. M.; Mirzoyan, R.; Miyamoto, H.; Moldón, J.; Moralejo, A.; Nieto, D.; Nilsson, K.; Orito, R.; Oya, I.; Paoletti, R.; Paredes, J. M.; Partini, S.; Pasanen, M.; Pauss, F.; Pegna, R. G.; Perez-Torres, M. A.; Persic, M.; Peruzzo, L.; Pochon, J.; Prada, F.; Prada Moroni, P. G.; Prandini, E.; Puchades, N.; Puljak, I.; Reichardt, I.; Reinthal, R.; Rhode, W.; Ribó, M.; Rico, J.; Rügamer, S.; Saggion, A.; Saito, K.; Saito, T. Y.; Salvati, M.; Sánchez-Conde, M.; Satalecka, K.; Scalzotto, V.; Scapin, V.; Schultz, C.; Schweizer, T.; Shayduk, M.; Shore, S. N.; Sierpowska-Bartosik, A.; Sillanpää, A.; Sitarek, J.; Sobczynska, D.; Spanier, F.; Spiro, S.; Stamerra, A.; Steinke, B.; Storz, J.; Strah, N.; Struebig, J. C.; Suric, T.; Takalo, L.; Tavecchio, F.; Temnikov, P.; Terzić, T.; Tescaro, D.; Teshima, M.; Torres, D. F.; Vankov, H.; Wagner, R. M.; Weitzel, Q.; Zabalza, V.; Zandanel, F.; Zanin, R.; Neronov, A.; Pfrommer, C.; Pinzke, A.; Semikoz, D. V.; MAGIC Collaboration

    2010-11-01

    We report on the detection with the MAGIC telescopes of very high energy (VHE) γ-rays from IC 310, a head-tail radio galaxy in the Perseus galaxy cluster, observed during the interval 2008 November to 2010 February. The Fermi satellite has also detected this galaxy. The source is detected by MAGIC at a high statistical significance of 7.6σ in 20.6 hr of stereo data. The observed spectral energy distribution is flat with a differential spectral index of -2.00 ± 0.14. The mean flux above 300 GeV, between 2009 October and 2010 February, (3.1 ± 0.5) × 10-12 cm-2 s-1, corresponds to (2.5 ± 0.4)% of Crab Nebula units. Only an upper limit, of 1.9% of Crab Nebula units above 300 GeV, was obtained with the 2008 data. This, together with strong hints (>3σ) of flares in the middle of 2009 October and November, implies that the emission is variable. The MAGIC results favor a scenario with the VHE emission originating from the inner jet close to the central engine. More complicated models than a simple one-zone synchrotron self-Compton (SSC) scenario, e.g., multi-zone SSC, external Compton, or hadronic, may be required to explain the very flat spectrum and its extension over more than three orders of magnitude in energy.

  20. High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology

    Science.gov (United States)

    Tian, Ye; Zetterling, Carl-Mikael

    2017-09-01

    This paper presents a comprehensive investigation of the frequency response of a monolithic OpAmp-RC integrator implemented in a 4H-SiC bipolar IC technology. The circuits and devices have been measured and characterized from 27 to 500 °C. The devices have been modelled to identify that the substrate capacitance is a dominant factor affecting the OpAmp's high-frequency response. Large Miller compensation capacitors of more than 540 pF are required to ensure stability of the internal OpAmp. The measured unit-gain-bandwidth product of the OpAmp is ∼1.1 MHz at 27 °C, and decreases to ∼0.5 MHz at 500 °C mainly due to the reduction of the transistor's current gain. On the other hand, it is not necessary to compensate the integrator in a relatively wide bandwidth ∼0.7 MHz over the investigated temperature range. At higher frequencies, the integrator's frequency response has been identified to be significantly affected by that of the OpAmp and load impedance. This work demonstrates the potential of this technology for high temperature applications requiring bandwidths of several megahertz.

  1. High-performance copper alloy films for barrierless metallization

    Science.gov (United States)

    Lin, C. H.; Leau, W. K.; Wu, C. H.

    2010-11-01

    In this study, we observe useful properties of V1.1- and V0.8N0.4-bearing copper (Cu) films deposited on barrierless silicon (Si) substrates by a cosputtering process. The Cu98.8(V0.8N0.4), or Cu(VNx) for brevity, films exhibit low resistivity (2.9 μΩ cm) and minimal leakage current after annealing at temperatures up to 700 °C for 1 h; no detectable reaction occurs at the Cu/Si interface. These observations confirm the high thermal stability of Cu(VNx) films. Furthermore, since these films have good adhesion features, they can be used for barrierless Cu metallization.

  2. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  3. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  4. Controlling film topography to form highly hydrophobic waterborne coatings.

    Science.gov (United States)

    López, Ana B; de la Cal, José C; Asua, José M

    2016-08-17

    Coatings have a tremendous impact on economy as they reduce corrosion that has an estimated cost of 3% of the world's GDP. Hydrophobic coatings are particularly efficient for this purpose and the challenge is to produce cost effective and environmentally friendly, highly hydrophobic, cohesive and non-porous coatings applicable to large and irregular surfaces. This work shows that this goal can be achieved by forming wrinkles on the surface of waterborne coatings through fine-tuning of the film forming conditions. The proof of concept was demonstrated by using waterborne dispersions of copolymers of 1H,1H,2H,2H-perfluorodecyl acrylate and 2-ethylhexyl acrylate, and using the temperature and hardness of the copolymer as control variables during film formation. This allowed the formation of transparent films with a wrinkled surface that had a contact angle of 133°, which represents an increase of 20° with respect to the film cast under standard conditions.

  5. High conductivity transparent carbon nanotube films deposited from superacid

    Energy Technology Data Exchange (ETDEWEB)

    Hecht, David S; Lee, Roland; Hu Liangbing [Unidym Incorporated, 1244 Reamwood Drive, Sunnyvale, CA 94089 (United States); Heintz, Amy M; Moore, Bryon; Cucksey, Chad; Risser, Steven, E-mail: dhecht@gmail.com [Battelle, 505 King Avenue, Columbus, OH 43201 (United States)

    2011-02-18

    Carbon nanotubes (CNTs) were deposited from a chlorosulfonic superacid solution onto PET substrates by a filtration/transfer method. The sheet resistance and transmission (at 550 nm) of the films were 60 {Omega}/sq and 90.9% respectively, which corresponds to a DC conductivity of 12 825 S cm{sup -1} and a DC/optical conductivity ratio of 64.1. This is the highest DC conductivity reported for CNT thin films to date, and attributed to both the high quality of the CNT material and the exfoliation/doping by the superacid. This work demonstrates that CNT transparent films have not reached the conductivity limit; continued improvements will enable these films to be used as the transparent electrode for applications in solid state lighting, LCD displays, touch panels, and photovoltaics.

  6. High conductivity transparent carbon nanotube films deposited from superacid.

    Science.gov (United States)

    Hecht, David S; Heintz, Amy M; Lee, Roland; Hu, Liangbing; Moore, Bryon; Cucksey, Chad; Risser, Steven

    2011-02-18

    Carbon nanotubes (CNTs) were deposited from a chlorosulfonic superacid solution onto PET substrates by a filtration/transfer method. The sheet resistance and transmission (at 550 nm) of the films were 60 Ω/sq and 90.9% respectively, which corresponds to a DC conductivity of 12,825 S cm(-1) and a DC/optical conductivity ratio of 64.1. This is the highest DC conductivity reported for CNT thin films to date, and attributed to both the high quality of the CNT material and the exfoliation/doping by the superacid. This work demonstrates that CNT transparent films have not reached the conductivity limit; continued improvements will enable these films to be used as the transparent electrode for applications in solid state lighting, LCD displays, touch panels, and photovoltaics.

  7. Thin Film Ceramic Strain Sensor Development for High Temperature Environments

    Science.gov (United States)

    Wrbanek, John D.; Fralick, Gustave C.; Gonzalez, Jose M.; Laster, Kimala L.

    2008-01-01

    The need for sensors to operate in harsh environments is illustrated by the need for measurements in the turbine engine hot section. The degradation and damage that develops over time in hot section components can lead to catastrophic failure. At present, the degradation processes that occur in the harsh hot section environment are poorly characterized, which hinders development of more durable components, and since it is so difficult to model turbine blade temperatures, strains, etc, actual measurements are needed. The need to consider ceramic sensing elements is brought about by the temperature limits of metal thin film sensors in harsh environments. The effort at the NASA Glenn Research Center (GRC) to develop high temperature thin film ceramic static strain gauges for application in turbine engines is described, first in the fan and compressor modules, and then in the hot section. The near-term goal of this research effort was to identify candidate thin film ceramic sensor materials and provide a list of possible thin film ceramic sensor materials and corresponding properties to test for viability. A thorough literature search was conducted for ceramics that have the potential for application as high temperature thin film strain gauges chemically and physically compatible with the NASA GRCs microfabrication procedures and substrate materials. Test results are given for tantalum, titanium and zirconium-based nitride and oxynitride ceramic films.

  8. Enhancement of high-TC superconducting thin film devices by nanoscale polishing

    Science.gov (United States)

    Michalowski, P.; Shapoval, T.; Meier, D.; Katzer, C.; Schmidl, F.; Schultz, L.; Seidel, P.

    2012-11-01

    The effects of mechanical nanoscale polishing on the superconducting parameters of YBa2Cu3O7-δ (YBCO) thin films and bi-crystal grain boundary Josephson junctions have been investigated. We prepared samples with additional gold nanocrystallites in the YBCO film. As they are distributed throughout the whole YBCO film, they provide a low-resistance ohmic contact even if parts of the film are removed. Polishing was performed either before or after the patterning and did not change the properties of the grain boundary. However, nanopolishing reduces the film roughness in a significant way, which makes it an indispensable tool for the preparation of integrated superconducting circuits. We also succeeded in tuning the IC and RN of the Josephson junctions of direct current superconducting quantum interference devices (dc-SQUIDs) by systematically reducing the film thickness, which opens up new possibilities in the application of magnetic field sensors.

  9. Optically Thin Metallic Films for High-radiative-efficiency Plasmonics

    CERN Document Server

    Yang, Yi; Hsu, Chia Wei; Miller, Owen D; Joannopoulos, John D; Soljačić, Marin

    2016-01-01

    Plasmonics enables deep-subwavelength concentration of light and has become important for fundamental studies as well as real-life applications. Two major existing platforms of plasmonics are metallic nanoparticles and metallic films. Metallic nanoparticles allow efficient coupling to far field radiation, yet their synthesis typically leads to poor material quality. Metallic films offer substantially higher quality materials, but their coupling to radiation is typically jeopardized due to the large momentum mismatch with free space. Here, we propose and theoretically investigate optically thin metallic films as an ideal platform for high-radiative-efficiency plasmonics. For far-field scattering, adding a thin high-quality metallic substrate enables a higher quality factor while maintaining the localization and tunability that the nanoparticle provides. For near-field spontaneous emission, a thin metallic substrate, of high quality or not, greatly improves the field overlap between the emitter environment and ...

  10. Self-assembly of a thin highly reduced graphene oxide film and its high electrocatalytic activity

    Science.gov (United States)

    Bai, Yan-Feng; Zhang, Yong-Fang; Zhou, An-Wei; Li, Hai-Wai; Zhang, Yu; Luong, John H. T.; Cui, Hui-Fang

    2014-10-01

    A thin highly reduced graphene oxide (rGO) film was self-assembled at the dimethyl formamide (DMF)-air interface through evaporation-induced water-assisted thin film formation at the pentane-DMF interface, followed by complete evaporation of pentane. The thin film was transferred onto various solid substrates for film characterization and electrochemical sensing. UV-visible spectrometry, scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrochemistry techniques were used to characterize the film. An rGO film showing 82.8% of the transmittance at 550 nm corresponds to a few layers of rGO nanosheets. The rGO nanosheets cross-stack with each other, lying approximately in the plane of the film. An rGO film collected on a glassy carbon (GC) electrode exhibited improved electrical conductivity compared to GC, with the electrode charge-transfer resistance (Rct) reduced from 31 Ω to 22 Ω. The as-formed rGO/GC electrode was mechanically very stable, exhibiting significantly enhanced electrocatalytic activity to H2O2 and dopamine. Multiple layers of the rGO films on the GC electrode showed even stronger electrocatalytic activity to dopamine than that of the single rGO film layer. The controllable formation of a stable rGO film on various solid substrates has potential applications for nanoelectronics and sensors/biosensors.

  11. Investigation of defects in highly photosensitive germanosilicate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Simmons-Potter, K.; Potter, B.G. Jr.; Warren, W.L.

    1997-02-01

    Germanosilicate glasses exhibit a significant photosensitive response which has been linked to the presence of oxygen-deficient germanium point defects in the glass structure. Based on this correlation, highly photosensitive thin films have been engineered which demonstrate the largest reported ultraviolet-induced refractive index perturbations (An) in an as-synthesized material. Our thin-film fabrication process avoids the use of hydrogen sensitizing treatments and, thus, yields stable films which retain their predisposition for large photosensitivity for over one year of storage. Understanding the nature of the defects in such films and their relationship to charge trapping and enhanced photosensitivity is of paramount importance in designing and optimizing the materials. Toward this end, our films have been studied using electron paramagnetic resonance (EPR), capacitance-voltage, and optical bleaching and absorption spectroscopies. We find experimental evidence suggesting a model in which a change in spin state and charge state of isolated paramagnetic neutral Ge dangling bonds form either diamagnetic positively or negatively charged Ge sites which are largely responsible for the charge trapping and photosensitivity in these thin films. We present experimental data and theoretical modeling to support our defect model and to show the relevance of the work.

  12. High Pressure Hydrogen Materials Compatibility of Piezoelectric Films

    Energy Technology Data Exchange (ETDEWEB)

    Alvine, Kyle J.; Shutthanandan, V.; Bennett, Wendy D.; Bonham, Charles C.; Skorski, Daniel C.; Pitman, Stan G.; Dahl, Michael E.; Henager, Charles H.

    2010-12-02

    Abstract: Hydrogen is being considered as a next-generation clean burning fuel. However, hydrogen has well known materials issues, including blistering and embrittlement in metals. Piezoelectric materials are used as actuators in hydrogen fuel technology. We present studies of materials compatibility of piezoelectric films in a high pressure hydrogen environment. Absorption of high pressure hydrogen was studied with Elastic Recoil Detection Analysis (ERDA) and Rutherford Back Scattering (RBS) in lead zirconate titanate (PZT) and barium titanate (BTO) thin films. Hydrogen surface degradation in the form of blistering and Pb mixing was also observed.

  13. Silencing of High Mobility Group Isoform I-C (HMGI-C) Enhances Paclitaxel Chemosensitivity in Breast Adenocarcinoma Cells (MDA-MB-468)

    Science.gov (United States)

    Mansoori, Behzad; Mohammadi, Ali; Goldar, Samira; shanehbandi, Dariush; Mohammadnejad, Leila; Baghbani, Elham; Kazemi, Tohid; Kachalaki, Saeed; Baradaran, Behzad

    2016-01-01

    Purpose: HMGI-C (High Mobility Group protein Isoform I-C) protein is a member of the high-mobility group AT-hook (HMGA) family of small non-histone chromosomal protein that can modulate transcription of an ample number of genes. Genome-wide studies revealed up regulation of the HMGI-C gene in many human cancers. We suggested that HMGI-C might play a critical role in the progression and migration of various tumors. However, the exact role of HMGI-C in breast adenocarcinoma has not been cleared. Methods: The cells were transfected with siRNAs using transfection reagent. Relative HMGI-C mRNA and protein levels were measured by quantitative real-time PCR and Western blotting, respectively. The cytotoxic effects of HMGI-C siRNA, Paclitaxel alone and combination on breast adenocarcinoma cells were determined using MTT assay. The migration after treatment by HMGI-C siRNA, Paclitaxel alone and combination were detected by wound-healing respectively. Results: HMGI-C siRNA significantly reduced both mRNA and protein expression levels in a 48 hours after transfection and dose dependent manner. We observed that the knockdown of HMGI-C led to the significant reduced cell viability and inhibited cells migration in MDA-MB-468 cells in vitro. Conclusion: These results propose that HMGI-C silencing and Paclitaxel treatment alone can inhibit the proliferation and migration significantly, furthermore, synergic effect of HMGI-C siRNA and Paclitaxel showed higher inhibition compared to mono treatment. Taken together, HMGI-C could be used as a promising therapeutic agent in the treatment of human breast adenocarcinoma. Therefore HMGI-C siRNA may be an effective adjuvant in human breast adenocarcinoma. PMID:27478778

  14. Carbon film deposition from high velocity rarefied flow

    Energy Technology Data Exchange (ETDEWEB)

    Rebrov, A.K., E-mail: rebrov@itp.nsc.ru; Emelyanov, A.A.; Yudin, I.B.

    2015-01-30

    The presented study is based on the idea of the activation of a gas-precursor high velocity flow by hot wire. The wire forms the channel for flow before expansion to substrate. The construction allows change of the specific flow rate, velocity, composition and temperature of a gas mixture by studying the film synthesis in conditions from free molecular to continuum flow at velocities from hundreds to thousands of m/s. At a high pressure, the film has typical and unusual hexagonal incorporations for diamond tetragonal particles. Raman spectrum with the pronounced diamond peak is typical for diamond-like film. X-ray diffraction points in the presence of lonsdaleite. Conditions of deposition were simulated by Monte Carlo method. Collisions with hot surfaces and chemical transformations were taken into consideration as well.

  15. Crystalline, highly oriented MOF thin film: the fabrication and application.

    Science.gov (United States)

    Fu, Zhihua; Xu, Gang

    2016-10-24

    The thin film of metal-organic frameworks (MOFs) is a rapidly developing research area which has tremendous potential applications in many fields. One of the major challenges in this area is to fabricate MOF thin film with good crystallinity, high orientation and well-controlled thickness. In order to address this challenge, different appealing approaches have been studied intensively. Among various oriented MOF films, many efforts have also been devoted to developing novel properties and broad applications, such as in gas separator, thermoelectric, storage medium and photovoltaics. As a result, there has been a large demand for fundamental studies that can provide guidance and experimental data for further applications. In this account, we intend to present an overview of current synthetic methods for fabricating oriented crystalline MOF thin film and bring some updated applications. We give our perspective on the background, preparation and applications that led to the developments in this area and discuss the opportunities and challenges of using crystalline, highly oriented MOF thin film.

  16. Bioinspired Superhydrophobic Highly Transmissive Films for Optical Applications.

    Science.gov (United States)

    Vüllers, Felix; Gomard, Guillaume; Preinfalk, Jan B; Klampaftis, Efthymios; Worgull, Matthias; Richards, Bryce; Hölscher, Hendrik; Kavalenka, Maryna N

    2016-11-01

    Inspired by the transparent hair layer on water plants Salvinia and Pistia, superhydrophobic flexible thin films, applicable as transparent coatings for optoelectronic devices, are introduced. Thin polymeric nanofur films are fabricated using a highly scalable hot pulling technique, in which heated sandblasted steel plates are used to create a dense layer of nano- and microhairs surrounding microcavities on a polymer surface. The superhydrophobic nanofur surface exhibits water contact angles of 166 ± 6°, sliding angles below 6°, and is self-cleaning against various contaminants. Additionally, subjecting thin nanofur to argon plasma reverses its surface wettability to hydrophilic and underwater superoleophobic. Thin nanofur films are transparent and demonstrate reflection values of less than 4% for wavelengths ranging from 300 to 800 nm when attached to a polymer substrate. Moreover, used as translucent self-standing film, the nanofur exhibits transmission values above 85% and high forward scattering. The potential of thin nanofur films for extracting substrate modes from organic light emitting diodes is tested and a relative increase of the luminous efficacy of above 10% is observed. Finally, thin nanofur is optically coupled to a multicrystalline silicon solar cell, resulting in a relative gain of 5.8% in photogenerated current compared to a bare photovoltaic device.

  17. High coercivity in nanostructured Co-ferrite thin films

    Indian Academy of Sciences (India)

    J H Yin; B H Liu; J Ding; Y C Wang

    2006-11-01

    Three methods including sol–gel, rf sputtering and pulsed laser deposition (PLD) have been used for the fabrication of high coercivity Co-ferrite thin films with a nanocrystalline structure. The PLD method is demonstrated to be a possible tool to achieve Co-ferrite films with high coercivity and small grain size at low deposition temperature. High coercivity, over 10 kOe, has been successfully achieved in Co-ferrite films with a thickness of ∼ 100 nm deposited using PLD with a substrate temperature at 550°C. The Co-ferrite films prepared by PLD at over 300°C on different substrates including amorphous glass, quartz and silicon exhibits an obvious (111) textured structure and possesses perpendicular anisotropy. Our study has also shown that the high coercivity is related with a large residual strain, which may induce an additional magnetic anisotropy (stress anisotropy) and at the same time serve as pinning centres, which can restrict the domain wall movement and therefore, increase the coercivity.

  18. Sputtered thin films for high density tape recording

    NARCIS (Netherlands)

    Nguyen, L.T.

    This thesis describes the investigation of sputtered thin film media for high density tape recording. As discussed in Chapter 1, to meet the tremendous demand of data storage, the density of recording tape has to be increased continuously. For further increasing the bit density the key factors are:

  19. Sputtered thin films for high density tape recording

    NARCIS (Netherlands)

    Nguyen, L.T.

    2004-01-01

    This thesis describes the investigation of sputtered thin film media for high density tape recording. As discussed in Chapter 1, to meet the tremendous demand of data storage, the density of recording tape has to be increased continuously. For further increasing the bit density the key factors are:

  20. High-resistivity nanogranular Co–Al–O films for high-frequency applications

    NARCIS (Netherlands)

    Khalili Amiri, P.; Zhuang, Y.; Schellevis, H.; Rejaei, B.; Vroubel, M.; Ma, Y.; Burghartz, J.N.

    2007-01-01

    This work presents a series of high-resistivity nanogranular Co–Al–O films with maximum resistivity of ∼ 110 mΩ cm. The films were deposited using pulsed dc reactive sputtering of a Co72Al28 target in an oxygen/argon ambient. The samples were characterized by scanning electron microscopy (SEM), M-H

  1. Simplified design of IC amplifiers

    CERN Document Server

    Lenk, John

    1996-01-01

    Simplified Design of IC Amplifiers has something for everyone involved in electronics. No matter what skill level, this book shows how to design and experiment with IC amplifiers. For experimenters, students, and serious hobbyists, this book provides sufficient information to design and build IC amplifier circuits from 'scratch'. For working engineers who design amplifier circuits or select IC amplifiers, the book provides a variety of circuit configurations to make designing easier.Provides basics for all phases of practical design.Covers the most popular forms for amplif

  2. Evaluation of high temperature dielectric films for high voltage power electronic applications

    Science.gov (United States)

    Suthar, J. L.; Laghari, J. R.

    1992-01-01

    Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

  3. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moreira, Milena A. [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala, Sweden and School of Electrical and Computer Engineering, University of Campinas, CEP 13.083-852 Campinas-SP (Brazil); Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas, E-mail: tomas.kubart@angstrom.uu.se [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala (Sweden)

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  4. Tinsel Town as Teacher: Hollywood Film in the High School Classroom

    Science.gov (United States)

    Marcus, Alan S.; Stoddard, Jeremy D.

    2007-01-01

    Reported in this article are the results of research that explored which feature films teachers are using to teach high school United States history and how and why they are using these films. The terms "feature film" and "Hollywood film" are used throughout to refer to movies commercially created for a mass audience, often for…

  5. The ICS International Chronostratigraphic Chart

    NARCIS (Netherlands)

    Cohen, K.M.; Finney, S.C.; Gibbard, P.L.; Fan, J.-X.

    2013-01-01

    The International Commission on Stratigraphy (ICS) has a long tradition of producing international charts that communicate higher-order divisions of geological time and actual knowledge on the absolute numerical ages of their boundaries. The primary objective of ICS is to define precisely a global

  6. Thin film detection of High Energy Materials: Optical Pumping Approach

    CERN Document Server

    Barthwal, Sachin

    2014-01-01

    We present our work on High Energy Material detection based on thin film of Lithium using the phenomenon of Optical Pumping. The Li atoms present in the thin film are optically pumped to one of the ground hyperfine energy levels so that they can no more absorb light from the resonant light source. Now in presence of a RF signal, which quantifies the ambient magnetic field, this polarized atomic system is again randomized thus making it reabsorb the resonant light. This gives a quantified measurement of the magnetic field surrounding the thin film detector. This is then mapped to the presence of magnetic HEM and hence the HEM are detected. Our approach in this regard starts with verifying the stability of Lithium atoms in various solvents so as to get a suitable liquid medium to form a thin film. In this regard, various UV-visible characterization spectra are presented to finally approach a stable system for the detection. We have worked on around 10 polar and non- polar solvents to see the stability criteria....

  7. High magnetic field properties of Fe-pnictide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kurth, Fritz

    2015-11-20

    The recent discovery of high-temperature superconductivity in Fe-based materials triggered worldwide efforts to investigate their fundamental properties. Despite a lot of similarities to cuprates and MgB{sub 2}, important differences like near isotropic behaviour in contrast to cuprates and the peculiar pairing symmetry of the order parameter (OP) have been reported. The OP symmetry of Fe-based superconductors (FBS) was theoretically predicted to be of so-called s± state prior to various experimental works. Still, most of the experimental results favour the s± scenario; however, definitive evidence has not yet been reported. Although no clear understanding of the superconducting mechanisms yet exists, potential applications such as high-field magnets and Josephson devices have been explored. Indeed, a lot of reports about FBS tapes, wires, and even SQUIDs have been published to this date. In this thesis, the feasibility of high-field magnet applications of FBS is addressed by studying their transport properties, involving doped BaFe{sub 2}As{sub 2} (Ba-122) and LnFeAs(O,F) [Ln=Sm and Nd]. Particularly, it is important to study physical properties in a sample form (i.e. thin films) that is close to the conditions found in applications. However, the realisation of epitaxial FBS thin films is not an easy undertaking. Recent success in growing epitaxial FBS thin films opens a new avenue to delve into transport critical current measurements. The information obtained through this research will be useful for exploring high-field magnet applications. This thesis consists of 7 chapters: Chapter 1 describes the motivation of this study, the basic background of superconductivity, and a brief summary of the thin film growth of FBS. Chapter 2 describes experimental methods employed in this study. Chapter 3 reports on the fabrication of Co-doped Ba-122 thin films on various substrates. Particular emphasis lies on the discovery of fluoride substrates to be beneficial for

  8. Spray pyrolysis for high T{sub c} superconductors films

    Energy Technology Data Exchange (ETDEWEB)

    Odier, P [Laboratoire de Cristallographie, CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex (France); Supardi, Z [Physics Department, Universitas Negeri Surabaya, 60231 (Indonesia); De-Barros, D [Laboratoire de Cristallographie, CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex (France); Vergnieres, L [Laboratoire de Cristallographie, CNRS, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex (France); Ramirez-Castellanos, J [Departamento de Quimica Inorganica I, Facultad de Ciencias Quimicas, Universidad Complutense de Madrid, 28040-Madrid (Spain); Gonzales-Calbet, J M [Departamento de Quimica Inorganica I, Facultad de Ciencias Quimicas, Universidad Complutense de Madrid, 28040-Madrid (Spain); Vallet-Regi, M [Departamento de Quimica Inorganica y Bioinorganica, Facultad de Farmacia, Universidad Complutense de Madrid, 28040-Madrid (Spain); Villard, C [CRTBT, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex (France); Peroz, Ch [CRTBT, 25 Avenue des Martyrs, BP 166, 38042 Grenoble Cedex (France); Weiss, F [Laboratoire des Materiaux et du Genie Physique (LMGP), INPG, 38406 St Martin d' Heres Cedex (France)

    2004-11-01

    Spray pyrolysis at high temperature is reviewed and applied to the formation of epitaxial thick layers of YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO). The necessary conditions to enhance the texture quality and the critical current density are discussed. High critical current densities, over 1.0 MA cm{sup -2} (at 77 K, self-field), are reported, making this technique very promising for low cost applications. This emphasizes the need for more comprehensive studies regarding the chemical phenomena involved in film deposition by spray pyrolysis at high temperature, especially those concerning local equilibrium and reactions occurring in the area involved in the deposition.

  9. Embedded I&C for Extreme Environments

    Energy Technology Data Exchange (ETDEWEB)

    Kisner, Roger A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-04-01

    This project uses embedded instrumentation and control (I&C) technologies to demonstrate potential performance gains of nuclear power plant components in extreme environments. Extreme environments include high temperature, radiation, high pressure, high vibration, and high EMI conditions. For extreme environments, performance gains arise from moment-to-moment sensing of local variables and immediate application of local feedback control. Planning for embedding I&C during early system design phases contrasts with the traditional, serial design approach that incorporates minimal I&C after mechanical and electrical design is complete. The demonstration application involves the development and control of a novel, proof-of-concept motor/pump design. The motor and pump combination operate within the fluid environment, eliminating the need for rotating seals. Actively controlled magnetic bearings also replace failure-prone mechanical contact bearings that typically suspend rotating components. Such as design has the potential to significantly enhance the reliability and life of the pumping system and would not be possible without embedded I&C.

  10. High orientation Al films growth on LiNbO3 single crystal and its adhesion

    Institute of Scientific and Technical Information of China (English)

    LI Dong-mei; CHEN Jing-jing; PAN Feng

    2004-01-01

    High orientation Al films were deposited on 64°Y-XLiNbO3 substrate by DC magnetron sputtering and the influence of deposition temperature on microstructure and adhesion properties of Al films were investigated. The results show that crystallographic orientation of films varies with substrate temperature and the adhesion strength between LiNbO3 and Al films strongly depends on crystallographic orientation of Al films. The (111) orientated Al films shows stronger adhesion strength to LiNbO3 substrate than (100) orientated films. There is an optimum substrate temperature of 60 ℃ and hardening temperature of 200 ℃ for obtaining high (111) orientated Al films with good surface structure and adhesion property. Using this Al film, we have successfully fabricated the SAW filters with high frequency of about 1.89 GHz.

  11. Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films

    Institute of Scientific and Technical Information of China (English)

    GU Hao-Shuang; ZHANG Kai; HU Guang; LI Wei-Yong

    2006-01-01

    @@ Thin film bulk acoustic resonators are fabricated by using silicon bulk micromachining technology, which are constructed mainly from aluminium nitride (AlN) piezoelectric films. The results of x-ray diffraction, scanning electron microscopy and atomic force microscopy show that the AlN films exhibit highly c-axis orientation with good surface morphology. The resonators with the AlN films possessed a reflection coefficient -10.6 dB at the resonant frequency 2.537 GHz, an effective electromechanical coupling coefficient 3.75%, series quality 101.8, and parallel quality 79.7.

  12. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  13. High Performance Thin-Film Composite Forward Osmosis Membrane

    KAUST Repository

    Yip, Ngai Yin

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 μm) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m2-h-1, while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution. © 2010 American Chemical Society.

  14. HIGHLY SENSITIVE CATALASE ELECTRODE BASED ON POLYPYRROLE FILMS WITH MICROCONTAINERS

    Institute of Scientific and Technical Information of China (English)

    Yu-ying Gao; Gao-quan Shi

    2006-01-01

    Highly sensitive catalase electrodes for sensing hydrogen peroxide have been fabricated based on polypyrrole films with microcontainers. The microcontainers have a cup-like morphology and are arranged in a density of 4000 units cm-2.Catalase was immobilized into the polypyrrole films with microcontainers (Ppy-mc), which were coated on a Pt substrate electrode. The catalase/Ppy-mc/Pt electrode showed linear response to hydrogen peroxide in the range of 0-18 mmol/L at a potential of -0.3 V (versus SCE). Its sensitivity was measured to be approximately 3.64 μA (mmol/L)-1 cm-2, which is about two times that of the electrode fabricated from a flat Ppy film (catalase/Ppy-flat/Pt electrode). The electrode is highly selective for hydrogen peroxide and its sensitivity is interfered by potential interferents such as ascorbic acid, urea and fructose. Furthermore, such catalase electrodes showed long-term storage stability of 15 days under dry conditions at 4℃.

  15. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    Energy Technology Data Exchange (ETDEWEB)

    None

    2008-06-30

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology

  16. High-Temperature, Thin-Film Ceramic Thermocouples Developed

    Science.gov (United States)

    Sayir, Ali; Blaha, Charles A.; Gonzalez, Jose M.

    2005-01-01

    To enable long-duration, more distant human and robotic missions for the Vision for Space Exploration, as well as safer, lighter, quieter, and more fuel efficient vehicles for aeronautics and space transportation, NASA is developing instrumentation and material technologies. The high-temperature capabilities of thin-film ceramic thermocouples are being explored at the NASA Glenn Research Center by the Sensors and Electronics Branch and the Ceramics Branch in partnership with Case Western Reserve University (CWRU). Glenn s Sensors and Electronics Branch is developing thin-film sensors for surface measurement of strain, temperature, heat flux, and surface flow in propulsion system research. Glenn s Ceramics Branch, in conjunction with CWRU, is developing structural and functional ceramic technology for aeropropulsion and space propulsion.

  17. Smooth Particle Hydrodynamics Simulation of Micro-Cup-Extrusion Using a Graphit-ic Coating

    Directory of Open Access Journals (Sweden)

    Li Shi-Cheng

    2014-01-01

    Full Text Available Microextrusion is becoming increasingly important for the manufacturing of microcomponents. However, this reduction in scale to a microlevel means that the influence of friction and the need for suitable lubrication are greatly increased. This study therefore looks at the use of a low-friction and highly wear resistant Graphit-ic coating on the mold-forming section of a microextrusion mold, this coating being applied by a closed-field unbalanced magnetron sputter ion plating technique. A microcup of CuZn33 brass alloy was then extruded, with a wall thickness of 0.45 mm, outside diameter of 2.9 mm, and an internal diameter of 2 mm. The experimental results in which extrusion uses the mold coating with Graphit-ic film are compared against the experimental results in which extrusion uses the mold uncoating with Graphit-ic film. This showed that the load was decreased a lot and the self-lubricating solid coating facilitates a smooth extrusion process. As the extrusion rate was quite high, smoothed particle hydrodynamics method simulations of the extrusion process were conducted, these being then compared with the experimental results. These result showed that the SPH simulation can be applied to show the deformation of materials and predict the load trend.

  18. Application of a Coated Film Catalyst Layer Model to a High Temperature Polymer Electrolyte Membrane Fuel Cell with Low Catalyst Loading Produced by Reactive Spray Deposition Technology

    Directory of Open Access Journals (Sweden)

    Timothy D. Myles

    2015-10-01

    Full Text Available In this study, a semi-empirical model is presented that correlates to previously obtained experimental overpotential data for a high temperature polymer electrolyte membrane fuel cell (HT-PEMFC. The goal is to reinforce the understanding of the performance of the cell from a modeling perspective. The HT-PEMFC membrane electrode assemblies (MEAs were constructed utilizing an 85 wt. % phosphoric acid doped Advent TPS® membranes for the electrolyte and gas diffusion electrodes (GDEs manufactured by Reactive Spray Deposition Technology (RSDT. MEAs with varying ratios of PTFE binder to carbon support material (I/C ratio were manufactured and their performance at various operating temperatures was recorded. The semi-empirical model derivation was based on the coated film catalyst layer approach and was calibrated to the experimental data by a least squares method. The behavior of important physical parameters as a function of I/C ratio and operating temperature were explored.

  19. IC晶圆高效稳定传输原理与实现%Principle and Realization of IC Wafer Transfer with High Efficient and Stabilization

    Institute of Scientific and Technical Information of China (English)

    韩海军; 刘延杰; 荣伟彬; 孙立宁

    2013-01-01

    成果进行了总结,并提出了下一步的研究设想。%In the manufacturing process of very-large-scale in-tegrated circuit ( VLSI ) , wafers are required to be transferred among hundreds of technological processes , therefore, the performance of wafer transfer is crucial to the development of the entire IC industry .As one of the essential equipment for IC manufacturing , the wafer transfer robot undertakes the important task of wafer po-sitioning and fast and steadily transferring . With IC manufacturing developing toward the large-size ( diame-ter ≥300mm) wafer and small feature size (line-width≤32nm) direction, the wafer production line becomes more compact, with higher processing speed in more cleaner environment , which requires the higher per-formance of wafer transfer robot .In order to realize effi-ciently and steadily wafer transfer with high-efficiency and stabilization , we have conducted three aspects of research, that is, the accurate and stable trajectory tracking control of wafer transfer robot , the development of micro-fiber array for wafer transfer and the develop-ment of tactile sensor for force measurement and stick-slip detection .According to the problem with movable joints of the wafer transfer robot prototype being out of sync and its end effecter existing vibration , the combi-nation of cross-coupled synchronized control framework and open-loop input shape regulation technology has been successfully adopted to reduce the contour of the robot system and suppress the vibration of the end-effec-tor .Considering the shortage of low frictional coefficient between current convex point supporting materials and the wafer , a novel wafer transfer surface with micro-fi-ber array has been developed to apparently improve the acceleration of wafer transfer and transferring efficiency . To meet the requirement of detecting the contact proper-ties during wafer transfer , a new tactile sensor , based on the piezo-resisitive effect of piezo

  20. Gas film disturbance characteristics analysis of high-speed and high-pressure dry gas seal

    Science.gov (United States)

    Chen, Yuan; Jiang, Jinbo; Peng, Xudong

    2016-08-01

    The dry gas seal(DGS) has been widely used in high parameters centrifugal compressor, but the intense vibrations of shafting, especially in high-speed condition, usually result in DGS's failure. So the DGS's ability of resisting outside interference has become a determining factor of the further development of centrifugal compressor. However, the systematic researches of which about gas film disturbance characteristics of high parameters DGS are very little. In order to study gas film disturbance characteristics of high-speed and high-pressure spiral groove dry gas seal(S-DGS) with a flexibly mounted stator, rotor axial runout and misalignment are taken into consideration, and the finite difference method and analytical method are used to analyze the influence of gas film thickness disturbance on sealing performance parameters, what's more, the effects of many key factors on gas film thickness disturbance are systematically investigated. The results show that, when sealed pressure is 10.1MPa and seal face average linear velocity is 107.3 m/s, gas film thickness disturbance has a significant effect on leakage rate, but has relatively litter effect on open force; Excessively large excitation amplitude or excessively high excitation frequency can lead to severe gas film thickness disturbance; And it is beneficial to assure a smaller gas film thickness disturbance when the stator material density is between 3.1 g/cm3 to 8.4 g/cm3; Ensuring sealing performance while minimizing support axial stiffness and support axial damping can help to improve dynamic tracking property of dry gas seal. The proposed research provides the instruction to optimize dynamic tracking property of the DGS.

  1. High collection efficiency thin film diamond particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bergonzo, P.; Foulon, F.; Marshall, R.D.; Jany, C.; Brambilla, A. [CEA/Saclay, Gif-sur-Yvette (France); McKeag, R.D.; Jackman, R.B. [University College, London (United Kingdom)

    1998-12-31

    Diamond is a resilient material with rather extreme electronic properties. As such it is an interesting candidate for the fabrication of high performance solid state particle detectors. However, the commercially accessible form of diamond, grown by chemical vapor deposition (CVD) methods, is polycrystalline in nature and often displays rather poor electrical characteristics. This paper considers ways in which this material may be used to form alpha particle detectors with useful performance levels. One approach adopted has been to reduce the impurity levels within the feed-stock gases that are used to grow the diamond films. This has enabled significant improvements to be achieved in the mean carrier drift distance within the films leading to alpha detectors with up to 40% collection efficiencies. An alternative approach explored is the use of planar device geometries whereby charge collection is limited to the top surface of the diamond which comprises higher quality material than the bulk of the film. This has lead to collection efficiencies of 70%, the highest yet reported for polycrystalline CVD diamond based detectors. Techniques for improving the characteristics of these devices further are discussed.

  2. Mixed DPPC/DPPG monolayers at very high film compression.

    Science.gov (United States)

    Saad, Sameh M I; Policova, Zdenka; Acosta, Edgar J; Hair, Michael L; Neumann, A Wilhelm

    2009-09-15

    A drop shape technique using a constrained sessile drop constellation (ADSA-CSD) has been introduced as a superior technique for studying spread films specially at high collapse pressures [Saad et al. Langmuir 2008, 24, 10843-10850]. It has been shown that ADSA-CSD has certain advantages including the need only for small quantities of liquid and insoluble surfactants, the ability to measure very low surface tension values, easier deposition procedure, and leak-proof design. Here, this technique was applied to investigate mixed DPPC/DPPG monolayers to characterize the role of such molecules in maintaining stable film properties and surface activity of lung surfactant preparations. Results of compression isotherms were obtained for different DPPC/DPPG mixture ratios: 90/10, 80/20, 70/30, 60/40, and 50/50 in addition to pure DPPC and pure DPPG at room temperature of 24 degrees C. The ultimate collapse pressure of DPPC/DPPG mixtures was found to be 70.5 mJ/m2 (similar to pure DPPC) for the cases of low DPPG content (up to 20%). Increasing the DPPG content in the mixture (up to 40%) caused a slight decrease in the ultimate collapse pressure. However, further increase of DPPG in the mixture (50% or more) caused a sharp decrease in the ultimate collapse pressure to a value of 59.9 mJ/m2 (similar to pure DPPG). The change in film elasticity was also tracked for the range of mixture ratios studied. The physical reasons for such changes and the interaction between DPPC and DPPG molecules are discussed. The results also show a change in the film hysteresis upon successive compression and expansion cycles for different mixture ratios.

  3. A high resolution PVDF (peizoelectric) film respiration sensor

    Science.gov (United States)

    Nakano, Katsuya; Fujita, Kento; Misaki, Shinya; Fujii, Hiroyuki; Johnston, Robert; Misaki, Yukinori

    2017-07-01

    Sensors used today for contact measurement of a subject's breathing work by measuring the inductance change in some film, piezoelectric or pyro-electric, used in the sensor. However, their use can increase stress and burden for patients because of the close proximity to the body that the sensors must be to operate. They must be applied directly to the patient's body by tape or adhesive paste. To address this problem and reduce subject stress and burden, it was decided to research development of a high resolution breathing sensor that could still function even while placed over the patient's clothes. This was achieved by developing a new PVDF piezoelectric film based sensor with an innovative configuration. Through the use of some simple amplification circuitry and processing the output signal, the high sensitivity breathing sensor developed was determined to be able to accurately measure a person's breathing. Also, due to the high sensitivity of the sensor, heart rate was also detectable revealing the possibility for simultaneous measurement of both breathing and heart rate.

  4. Bibliography of high-T/sub c/ superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Talvacchio, J.

    1989-01-01

    This document represents an effort to make bibliographic information on high-T/sub c/ superconductor films available to those who cannot access the on-line database at the Westinghouse R and D Center. The database contains a growing list of references -- approaching 5000 -- each of which is identified by a set of two-letter keywords. The database is used the same way as as INSPEC's, but its fixed set of standard keywords enables the user to obtain a complete list of references on keyworded topics. Since a single keyword (or search term) such as ''sputtering'' creates a bibliography that is too long for practical use, the database is used most effectively by combining a series of keywords using Boolean algebra to identify a handful of relevant references. The structure of this document is intended to present the subset of papers concerning high-T/sub c/ films (725 papers) in a compact format as a substitute for on-line searches. Rather than listing separate bibliographies for each of the 185 keywords, a single list of all the references is contained in Section 6, and indices based on the keywords are contained in Sections 3--5. This report is a true bibliography and does not contain any informative text. 725 refs.

  5. Flexible Carbon Nanotube Films for High Performance Strain Sensors

    Directory of Open Access Journals (Sweden)

    Olfa Kanoun

    2014-06-01

    Full Text Available Compared with traditional conductive fillers, carbon nanotubes (CNTs have unique advantages, i.e., excellent mechanical properties, high electrical conductivity and thermal stability. Nanocomposites as piezoresistive films provide an interesting approach for the realization of large area strain sensors with high sensitivity and low manufacturing costs. A polymer-based nanocomposite with carbon nanomaterials as conductive filler can be deposited on a flexible substrate of choice and this leads to mechanically flexible layers. Such sensors allow the strain measurement for both integral measurement on a certain surface and local measurement at a certain position depending on the sensor geometry. Strain sensors based on carbon nanostructures can overcome several limitations of conventional strain sensors, e.g., sensitivity, adjustable measurement range and integral measurement on big surfaces. The novel technology allows realizing strain sensors which can be easily integrated even as buried layers in material systems. In this review paper, we discuss the dependence of strain sensitivity on different experimental parameters such as composition of the carbon nanomaterial/polymer layer, type of polymer, fabrication process and processing parameters. The insights about the relationship between film parameters and electromechanical properties can be used to improve the design and fabrication of CNT strain sensors.

  6. High-resistivity nanogranular Co-Al-O films for high-frequency applications

    Science.gov (United States)

    Khalili Amiri, Pedram; Zhuang, Yan; Schellevis, Hugo; Rejaei, Behzad; Vroubel, Marina; Ma, Yue; Burghartz, Joachim N.

    2007-05-01

    This work presents a series of high-resistivity nanogranular Co-Al-O films with maximum resistivity of ˜110mΩcm. The films were deposited using pulsed dc reactive sputtering of a Co72Al28 target in an oxygen/argon ambient. The samples were characterized by scanning electron microscopy (SEM), M-H loop measurements, and s-parameter measurements on microstrip transmission lines with Co-Al-O magnetic cores. The high-frequency magnetic permeability profile was extracted from the microstrip measurements. Reduction of deposition power resulted in resistivity enhancement, as well as reduction of coercivity and permeability. SEM images reveal an average grain size of ˜80nm for films with the highest resistivity.

  7. Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry

    Science.gov (United States)

    He, Ao-Dong; Liu, Bo; Song, Zhi-Tang; Wang, Liang-Yong; Liu, Wei-Li; Feng, Gao-Ming; Feng, Song-Lin

    2014-08-01

    In the paper, chemical mechanical planarization (CMP) of Ge2Sb2Te5 (GST) is investigated using IC1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate (RR) of GST increases with the increase of pressure for both pads, but the RR of GST polished using IC1010 is far more than that of Politex reg. To check the surface defects, GST film is observed with an optical microscope (OM) and scanning electron microscope (SEM). For the CMP with Politex reg, many spots are observed on the surface of the blank wafer with OM, but no obvious spots are observed with SEM. With regard to the patterned wafer, a few stains are observed on the GST cell, but many residues are found on other area with OM. However, from SEM results, a few residues are observed on the GST cell, more dielectric loss is revealed about the trench structure. For the CMP with IC1010, the surface of the polished blank wafer suffers serious scratches found with both OM and SEM, which may result from a low hardness of GST, compared with those of IC1010 and abrasives. With regard to the patterned wafer, it can achieve a clean surface and almost no scratches are observed with OM, which may result from the high-hardness SiO2 film on the surface, not from the soft GST film across the whole wafer. From the SEM results, a clean interface and no residues are observed on the GST surface, and less dielectric loss is revealed. Compared with Politex reg, the patterned wafer can achieve a good performance after CMP using IC1010.

  8. Companding technique for high dynamic range measurements using gafchromic films

    CERN Document Server

    Heuvel, Frank Van den; Defraene, Gilles

    2011-01-01

    We propose a methodology to perform dose measurements using gafchromic films which can span several decades of dose levels. The technique is based on a rescaling approach using different films irradiated at different dose levels. This is combined with a registration protocol correcting positioning and scaling factors for each film.

  9. Lustrous copper nanoparticle film: Photodeposition with high quantum yield and electric conductivity

    Science.gov (United States)

    Miyagawa, Masaya; Yonemura, Mari; Tanaka, Hideki

    2016-11-01

    Cu nanoparticle (NP) film has attracted much attention due to its high electric conductivity. In the present study, we prepared a Cu NP film on a TiO2-coated substrate by photoreduction of copper acetate solution. The obtained film showed high electric conductivity and metallic luster by the successive deposition of Cu NP. Moreover, the film was decomposed on exposure to fresh air, and its decomposition reaction mechanisms were proposed. Hence, we concluded that the obtained lustrous film was composed of Cu NP, even though its physical properties was similar to bulk copper.

  10. Preparation of high-pressure phase boron nitride films by physical vapor deposition

    CERN Document Server

    Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

    2002-01-01

    The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

  11. High-J{sub c} superconducting YBCO thin films for SQUIDs

    Energy Technology Data Exchange (ETDEWEB)

    Katsaros, A.; Savvides, N.; Foley, C. [CSIRO, Sydney, NSW (Australia). Applied Physics

    1996-12-31

    Full text: High critical current density, J{sub c}, and reproducibility of film quality are major issues in high-T{sub c} superconducting device technology. Because many factors such as substrate quality, deposition parameters and film stoichiometry impact on film quality the growth of high-J{sub c} YBa{sub 2}Cu{sub 3}O{sub 7} thin films suitable for devices is a demanding task. For optimum device performance c-axis epitaxial films are required with smooth surfaces, controlled microstructure and crystalline orientation, high T{sub c} (> 87 K) and high J{sub c} (> 1x10{sup 6} A cm{sup -2}). Consequently a stable platform in film quality is critical in developing and maintaining world class device technology. In previous Wagga meetings and elsewhere we presented details of our thin film deposition system, results of film growth studies, techniques of film characterisation and SQUID performance. In this paper we present transport properties and lattice parameters for a large number of films deposited over a period of ten months using a single target and under similar sputtering conditions. The data serve to illustrate the level of reproducibility of our deposition technology while closer examination of the data reveal some interesting `correlations` among properties. We have used these correlations to assist us to control both the deposition of films and subsequent processing into test structures and SQUIDs 5 refs.

  12. Oneindigheid van het IC Design

    NARCIS (Netherlands)

    Annema, Anne-Johan

    2005-01-01

    In de IC-elektronica is het begrip oneindig (en zijn alter-ego nul) al vele jaren zowel de rode draad als de grote leidraad: er worden steeds weer nieuwere technologieën en (systeem- en circuit)principes ontwikkeld om dichter bij het gewenste nulpunt en dichter bij de nagestreefde oneindigheid te ge

  13. ICS - i et minoritetsetnisk perspektiv

    DEFF Research Database (Denmark)

    Koldsø, Birgit Raundahl

    ICS anvendes i hovedparten af landets kommuner, som en generel socialfaglig metode i sagsbehandlingen omkring udsatte børn, unge og deres familier. Imidlertid findes der ingen forskning, erfaringsopsamling, evaluering eller systematiseret viden fra dansk kontekst, der sætter fokus på anvendelse a...

  14. 高压喷淋系统在IC高速电镀中的应用%Application of High-pressure Water Spray in IC High-Speed Pre-treatment Process of Electroplating

    Institute of Scientific and Technical Information of China (English)

    周晓军; 曹立宁; 胡子卿; 孟超; 脱培植; 李晓勇

    2011-01-01

    ln order to completely remove adhesive residue in the bonding process of the IC lead frame plating, a high-pressure spray system was added after degreasing process. The adhesive residue can be cleaned by the impact force and shearing force of water jet flow. Introduce the high pressure water spray system including the principle, structure characteristics and the selection of the nozzle.%在IC引线框架电镀中为了彻底清除粘片过程中框架引脚上粘结胶的残留,在除油(脱脂)后增加一道高压喷淋系统,利用其射流的冲击力和剪切力,将粘结胶清洗干净.主要针对这一工序进行论述,并针对其基本原理、结构特点及喷嘴的选型进行相关阐述.

  15. High efficiency nanostructured thin film solar cells for energy harvesting

    Science.gov (United States)

    Welser, Roger E.; Sood, Ashok K.; Lewis, Jay S.; Dhar, Nibir K.; Wijewarnasuriya, Priyalal S.

    2016-05-01

    Thin-film III-V materials are an attractive candidate material for solar energy harvesting devices capable of supplying portable and mobile power in both terrestrial and space environments. Nanostructured quantum well and quantum dot solar cells are being widely investigated as a means of extending infrared absorption and enhancing photovoltaic device performance. In this paper, we will review recent progress on realizing high-voltage InGaAs/GaAs quantum well solar cells that operate at or near the radiative limit of performance. These high-voltage nanostructured device designs provide a pathway to enhance the performance of existing device technologies, and can also be leveraged for next-generation solar cells.

  16. Impressive electromagnetic shielding effects exhibited by highly ordered, micrometer thick polyaniline films

    Science.gov (United States)

    Mohan, Ranjini R.; Varma, Sreekanth J.; Sankaran, Jayalekshmi

    2016-04-01

    The present work highlights the remarkably high shielding effectiveness of about 68 dB, exhibited by highly ordered and doped polyaniline films, in the microwave frequency range 4-12 GHz, obtained by self-stabilized dispersion polymerization as the synthesis route. The observed shielding effectiveness is found to depend quite sensitively on the electrical conducting properties, which are predominantly controlled by the nature and concentration of the dopants. The structural and morphological characterization of the films using XRD and TEM techniques reveals surprisingly high extent of crystallinity, which contributes significantly towards enhancing the electrical conductivity of the films. Most of the available reports on the microwave response of conducting polymer film samples deal with much thicker films, compared to the micrometer thick films of the present studies. The shielding effectiveness of acid doped, micrometer thick polyaniline films reported in the present work far exceeds most of the previously reported values and meets the commercial requirements.

  17. Silver: high performance anode for thin film lithium ion batteries

    Science.gov (United States)

    Taillades, G.; Sarradin, J.

    Among metals and intermetallic compounds, silver exhibits a high specific capacity according to the formation of different Ag-Li alloys (up to AgLi 12) in a very low voltage range versus lithium (0.250-0 V). Electrochemical results including Galvanostatic Intermittent Titration Technique (GITT) as well as cycling behaviour experiments confirmed the interesting characteristics of silver thin film electrodes prepared by radio frequency (r.f.) sputtering. XRD patterns recorded at different electrochemical stages of the alloying/de-alloying processes showed the complexity of the silver-lithium system under dynamic conditions. Cycling life depends on several parameters and particularly of the careful choice of cut-off voltages. In very well monitored conditions, galvanostatic cycles exhibited flat reversible plateaus with a minimal voltage value (0.050 V) between charge and discharge, a feature of great interest in the use of an electrode. The first results of a lithium ion battery with both silver and LiMn 1.5Ni 0.5O 4 thin films are presented.

  18. Optically controlled polarization in highly oriented ferroelectric thin films

    Science.gov (United States)

    Borkar, Hitesh; Tomar, M.; Gupta, Vinay; Katiyar, Ram S.; Scott, J. F.; Kumar, Ashok

    2017-08-01

    The out-of-plane and in-plane polarization of (Pb0.6Li0.2Bi0.2)(Zr0.2Ti0.8)O3 (PLBZT) thin film has been studied in the dark and under illumination from a weak light source of a comparable bandgap. A highly oriented PLBZT thin film was grown on a LaNiO3/LaAlO3 substrate by pulsed laser deposition; it showed well-saturated polarization which was significantly enhanced under light illumination. We employed two configurations for polarization characterization: the first deals with out-of-plane polarization with a single capacitor under investigation, whereas the second uses two capacitors connected in series via the bottom electrode. Two different configurations were illuminated using different energy sources and their effects were studied. The latter configuration shows a significant change in polarization under light illumination that may provide an extra degree of freedom for device miniaturization. The polarization was also tested using positive-up and negative-down measurements, confirming robust polarization and its switching under illumination.

  19. Persistent photoconductivity in highly porous ZnO films

    Science.gov (United States)

    Reemts, Jens; Kittel, Achim

    2007-01-01

    ZnO and ZnO-dye hybrid films prepared by electrochemical deposition are highly porous if fabricated in the presence of structure directing agents and they can easily be sensitized by various molecules. If the material is sensitized with the appropriate molecules, it becomes interesting for various sensor applications, i.e., gas sensors and biosensors, or as an electrode material for solar energy conversion in dye sensitized solar cells. In the present work, the focus is on dye sensitized ZnO as a model system. The long term photoconductivity transients have been investigated in such kind of material. Upon excitation with different wavelengths, the conductivity increases already under sub-band-gap illumination due to widely distributed trap states within the band gap. The slow photoconductivity transients follow a stretched exponential law if the illumination is rapidly changing in a dry atmosphere. The underlying mechanism of persistent photoconductivity can be attributed to a lattice relaxation process of surface states, immediately after electrons have been photoexcited into distributed surface states located inside the band gap of the ZnO thin film.

  20. The Implications Related to Different IC, Different Projects and Different Thinking Addressing the Common Core of IC

    DEFF Research Database (Denmark)

    Lindgren, Peter; Saghaug, Kristin Margrethe

    2009-01-01

    Purpose - In the field of innovation of business models on behalf of networks of different intellectual capabilities (ICA), the development of Intellectual Capital (IC) are highly in focus. An increased work of innovation in groups, projects and by individuals outside the core of the organization...... challenge the development of IC: - The IC at the organizational level seems to diminish when innovation gets highly dispersed and is operated outside the core of the organization - The attractiveness of the organization to different ICA, which is one fundament to sustainable and successful innovation, seems...... to fall when the IC at the organizational core level diminishes The objective of this paper is therefore to understand 1) How the IC at the organizational core level may continue to be developed, when at the same time innovation is taking place in dispersed groups and projects. 2) How to motivate...

  1. A laminate of ferromagnetic films with high effective permeability at high frequencies

    Directory of Open Access Journals (Sweden)

    I. T. Iakubov

    2014-10-01

    Full Text Available The paper reports on development of magnetodielectric material with high microwave permeability. The material is a laminate of multi-layer permalloy films deposited onto a thin mylar substrate by magnetron sputtering. The deposited films are arranged into a stack and glued together under pressure to obtain the laminate. With the content of ferromagnetic component in the laminate being 22 % vol., its measured quasistatic permeability is 60. The peak value of imaginary permeability attains 50 and the peak is located near 1 GHz. As compared with the multi-layer films, which the laminate is made of, it exhibits lower magnetic loss tangent at frequencies below the magnetic loss peak and may therefore be useful for many technical applications. Lower low-frequency loss may be attributed to pressing of the glued sample. This rectifies wrinkling appearing due to sputtering of rigid multi-layer film onto flexible mylar substrate and, therefore, makes the magnetic structure of the film more uniform.

  2. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.

    2015-03-09

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

  3. Ultra-high current density thin-film Si diode

    Science.gov (United States)

    Wang, Qi

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  4. Film quantum yields of EUV& ultra-high PAG photoresists

    Energy Technology Data Exchange (ETDEWEB)

    Hassanein, Elsayed; Higgins, Craig; Naulleau, Patrick; Matyi, Richard; Gallatin, Greg; Denbeaux, Gregory; Antohe, Alin; Thackery, Jim; Spear, Kathleen; Szmanda, Charles; Anderson, Christopher N.; Niakoula, Dimitra; Malloy, Matthew; Khurshid, Anwar; Montgomery, Cecilia; Piscani, Emil C.; Rudack, Andrew; Byers, Jeff; Ma, Andy; Dean, Kim; Brainard, Robert

    2008-01-10

    Base titration methods are used to determine C-parameters for three industrial EUV photoresist platforms (EUV-2D, MET-2D, XP5496) and twenty academic EUV photoresist platforms. X-ray reflectometry is used to measure the density of these resists, and leads to the determination of absorbance and film quantum yields (FQY). Ultrahigh levels ofPAG show divergent mechanisms for production of photo acids beyond PAG concentrations of 0.35 moles/liter. The FQY of sulfonium PAGs level off, whereas resists prepared with iodonium PAG show FQY s that increase beyond PAG concentrations of 0.35 moles/liter, reaching record highs of 8-13 acids generatedlEUV photons absorbed.

  5. High thermal conductivity of a hydrogenated amorphous silicon film.

    Science.gov (United States)

    Liu, Xiao; Feldman, J L; Cahill, D G; Crandall, R S; Bernstein, N; Photiadis, D M; Mehl, M J; Papaconstantopoulos, D A

    2009-01-23

    We measured the thermal conductivity kappa of an 80 microm thick hydrogenated amorphous silicon film prepared by hot-wire chemical-vapor deposition with the 3omega (80-300 K) and the time-domain thermo-reflectance (300 K) methods. The kappa is higher than any of the previous temperature dependent measurements and shows a strong phonon mean free path dependence. We also applied a Kubo based theory using a tight-binding method on three 1000 atom continuous random network models. The theory gives higher kappa for more ordered models, but not high enough to explain our results, even after extrapolating to lower frequencies with a Boltzmann approach. Our results show that this material is more ordered than any amorphous silicon previously studied.

  6. Highly stretchable polymer semiconductor films through the nanoconfinement effect.

    Science.gov (United States)

    Xu, Jie; Wang, Sihong; Wang, Ging-Ji Nathan; Zhu, Chenxin; Luo, Shaochuan; Jin, Lihua; Gu, Xiaodan; Chen, Shucheng; Feig, Vivian R; To, John W F; Rondeau-Gagné, Simon; Park, Joonsuk; Schroeder, Bob C; Lu, Chien; Oh, Jin Young; Wang, Yanming; Kim, Yun-Hi; Yan, He; Sinclair, Robert; Zhou, Dongshan; Xue, Gi; Murmann, Boris; Linder, Christian; Cai, Wei; Tok, Jeffery B-H; Chung, Jong Won; Bao, Zhenan

    2017-01-06

    Soft and conformable wearable electronics require stretchable semiconductors, but existing ones typically sacrifice charge transport mobility to achieve stretchability. We explore a concept based on the nanoconfinement of polymers to substantially improve the stretchability of polymer semiconductors, without affecting charge transport mobility. The increased polymer chain dynamics under nanoconfinement significantly reduces the modulus of the conjugated polymer and largely delays the onset of crack formation under strain. As a result, our fabricated semiconducting film can be stretched up to 100% strain without affecting mobility, retaining values comparable to that of amorphous silicon. The fully stretchable transistors exhibit high biaxial stretchability with minimal change in on current even when poked with a sharp object. We demonstrate a skinlike finger-wearable driver for a light-emitting diode. Copyright © 2017, American Association for the Advancement of Science.

  7. Thermal Conductivity of Carbon Nanotube Composite Films

    Science.gov (United States)

    Ngo, Quoc; Cruden, Brett A.; Cassell, Alan M.; Walker, Megan D.; Koehne, Jessica E.; Meyyappan, M.; Li, Jun; Yang, Cary Y.

    2004-01-01

    State-of-the-art ICs for microprocessors routinely dissipate power densities on the order of 50 W/sq cm. This large power is due to the localized heating of ICs operating at high frequencies, and must be managed for future high-frequency microelectronic applications. Our approach involves finding new and efficient thermally conductive materials. Exploiting carbon nanotube (CNT) films and composites for their superior axial thermal conductance properties has the potential for such an application requiring efficient heat transfer. In this work, we present thermal contact resistance measurement results for CNT and CNT-Cu composite films. It is shown that Cu-filled CNT arrays enhance thermal conductance when compared to as-grown CNT arrays. Furthermore, the CNT-Cu composite material provides a mechanically robust alternative to current IC packaging technology.

  8. High dose-rate brachytherapy source position quality assurance using radiochromic film.

    Science.gov (United States)

    Evans, M D C; Devic, S; Podgorsak, E B

    2007-01-01

    Traditionally, radiographic film has been used to verify high-dose-rate brachytherapy source position accuracy by co-registering autoradiographic and diagnostic images of the associated applicator. Filmless PACS-based clinics that do not have access to radiographic film and wet developers may have trouble performing this quality assurance test in a simple and practical manner. We describe an alternative method for quality assurance using radiochromic-type film. In addition to being easy and practical to use, radiochromic film has some advantages in comparison with traditional radiographic film when used for HDR brachytherapy quality assurance.

  9. Highly conformal and high-ionic conductivity thin-film electrolyte for 3D-structured micro batteries: Characterization of LiPON film deposited by MOCVD method

    Science.gov (United States)

    Fujibayashi, Takashi; Kubota, Yusuke; Iwabuchi, Katsuhiko; Yoshii, Naoki

    2017-08-01

    This paper reports a lithium phosphorus oxynitride (LiPON) thin-film electrolyte deposited using a metalorganic-chemical vapor deposition (MOCVD) method for 3D-structured micro batteries. It is shown that the MOCVD-LiPON film has both highly-conformal step coverage on a patterned substrate with line/space=2μm/2μm and aspect ratio=1 (51±3 nm) and high-ionic conductivity for very thin films deposited at 4.7 nm/min (5.9×10-6 S/cm for 190 nm and 5.3×10-6 S/cm for 95 nm). Detailed material characterization attributes the enhancement in ionic conductivity to a decrease in nanocrystallite size and improvement in chemical-composition uniformity in the film. In addition, electrochemical characterization of an all-solid-state thin-film battery fabricated with the 190 nm-thick LiPON film (Si substrate/Ti/Pt/LiCoO2/LiPON/a-Si:H/Cu) demonstrates that the LiPON film can successfully act as the electrolyte for lithium-ion batteries. Therefore, the MOCVD-LiPON film is a promising candidate material to realize 3D-structured micro batteries in the near future.

  10. Highly conformal and high-ionic conductivity thin-film electrolyte for 3D-structured micro batteries: Characterization of LiPON film deposited by MOCVD method

    Directory of Open Access Journals (Sweden)

    Takashi Fujibayashi

    2017-08-01

    Full Text Available This paper reports a lithium phosphorus oxynitride (LiPON thin-film electrolyte deposited using a metalorganic-chemical vapor deposition (MOCVD method for 3D-structured micro batteries. It is shown that the MOCVD-LiPON film has both highly-conformal step coverage on a patterned substrate with line/space=2μm/2μm and aspect ratio=1 (51±3 nm and high-ionic conductivity for very thin films deposited at 4.7 nm/min (5.9×10-6 S/cm for 190 nm and 5.3×10-6 S/cm for 95 nm. Detailed material characterization attributes the enhancement in ionic conductivity to a decrease in nanocrystallite size and improvement in chemical-composition uniformity in the film. In addition, electrochemical characterization of an all-solid-state thin-film battery fabricated with the 190 nm-thick LiPON film (Si substrate/Ti/Pt/LiCoO2/LiPON/a-Si:H/Cu demonstrates that the LiPON film can successfully act as the electrolyte for lithium-ion batteries. Therefore, the MOCVD-LiPON film is a promising candidate material to realize 3D-structured micro batteries in the near future.

  11. High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke; Xie, Haifen, E-mail: hfxie@ecust.edu.cn [Department of Physics, School of Science, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China); Zhao, Xiaojing; Liu, Feng [Department of Physics, Shanghai Normal University, 100 Guilin Road, Shanghai 200234 (China)

    2014-07-21

    Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5 nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36 s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductive graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.

  12. Propylsulfonic acid-anchored isocyanurate-based periodic mesoporous organosilica (PMO-ICS-Pr-SO3H): A new and highly efficient recoverable nanoporous catalyst for the one-pot synthesis of bis(indolyl)methane derivatives.

    Science.gov (United States)

    Yaghoubi, Amene; Dekamin, Mohammad G; Arefi, Elham; Karimi, Babak

    2017-11-01

    A new propylsulfonic acid-anchored isocyanurate bridging periodic mesoporous organosilica (PMO-ICS-Pr-SO3H) was prepared and shown to be a highly efficient recyclable nanoporous catalyst for the one-pot synthesis of bis(indolyl)methane derivatives in good to excellent yields from indole and different aldehydes in EtOH under mild reaction conditions in short reaction times. Moreover, the nanoporous catalyst was recovered and reused at least four times without significant decrease in its catalytic activity. The PMO-ICS-Pr-SO3H catalyst was characterizred by Fourier transform infrared (FTIR) spectroscopy, thermogravimetry analysis (TGA) and N2 adsorption-desorption isotherms techniques as well as field emission scanning electron microscopy (FESEM) and energy-dispersive X-ray (EDX) spectroscopy. Compared to the classical methodologies, this method illustrated significant advantages including low loading of the catalyst, high to excellent yields, short reaction times, avoiding the use of toxic transition metals or reactive reagents for modification of the catalytic activity, easy separation and purification of the products, and reusability of the catalyst. Copyright © 2017 Elsevier Inc. All rights reserved.

  13. High velocity vortex channeling in vicinal YBCO thin films.

    Science.gov (United States)

    Puica, I; Lang, W; Durrell, J H

    2012-09-01

    We report on electrical transport measurements at high current densities on optimally doped YBa2Cu3O7-δ thin films grown on vicinal SrTiO3 substrates. Data were collected by using a pulsed-current technique in a four-probe arrangement, allowing to extend the current-voltage characteristics to high supercritical current densities (up to 24 MA cm(-2)) and high electric fields (more than 20 V/cm), in the superconducting state at temperatures between 30 and 80 K. The electric measurements were performed on tracks perpendicular to the vicinal step direction, such that the current crossed between ab planes, under magnetic field rotated in the plane defined by the crystallographic c axis and the current density. At magnetic field orientation parallel to the cuprate layers, evidence for the sliding motion along the ab planes (vortex channeling) was found. The signature of vortex channeling appeared to get enhanced with increasing electric field, due to the peculiar depinning features in the kinked vortex range. They give rise to a current-voltage characteristics steeper than in the more off-plane rectilinear vortex orientations, in the electric field range below approximately 1 V/cm. Roughly above this value, the high vortex channeling velocities (up to 8.6 km/s) could be ascribed to the flux flow, although the signature of ohmic transport appeared to be altered by unavoidable macroscopic self-heating and hot-electron-like effects.

  14. Mass modelling of superthin galaxies: IC5249, UGC7321 and IC2233

    Science.gov (United States)

    Banerjee, Arunima; Bapat, Disha

    2017-04-01

    Superthin galaxies are low surface brightness (LSB) disc galaxies, characterized by optical discs with strikingly high values of planar-to-vertical axes ratios (>10), the physical origin and evolution of which continue to be a puzzle. We present mass models for three superthin galaxies: IC5249, UGC7321 and IC2233. We use high-resolution rotation curves and gas surface density distributions obtained from H I 21 cm radiosynthesis observations, in combination with their two-dimensional structural surface brightness decompositions at Spitzer 3.6 μm band, all of which were available in the literature. We find that while models with the pseudo-isothermal (PIS) and the Navarro-Frenk-White (NFW) dark matter density profiles fit the observed rotation curves of IC5249 and UGC7321 equally well, those with the NFW profile do not comply with the slowly rising rotation curve of IC2233. Interestingly, for all of our sample galaxies, the best-fitting mass models with a PIS dark matter density profile indicate a compact dark matter halo, i.e. Rc/RD < 2, where Rc is the core radius of the PIS dark matter halo and RD is the radial scalelength of the exponential stellar disc. The compact dark matter halo may be fundamentally responsible for the superthin nature of the stellar disc, and therefore our results may have important implications for the formation and evolution models of superthin galaxies in the universe.

  15. IC-index and maximum IC-colorings of double-stars%双星图的 IC-指数及极大 IC-着色

    Institute of Scientific and Technical Information of China (English)

    姜臻颖

    2014-01-01

    The problem of IC-coloring of double-stars is studied .It concludes a lower bound of the IC-in-dex of double-starts by showing a kind of IC-coloring above all ,then a upper bound of IC-index is ob-teined based on the definition of maximum IC-coloring .Since the upper bound and lower bound are e-qual ,the IC-index is determined ,thus two kinds of maximum IC-colorings of double-stars is proved .%研究了双星图的IC-着色问题。首先通过给出双星图一种IC-着色,得到其IC-指数的下界,再从极大IC-着色的定义出发,得到了IC-指数的上界。由上下界相等得到了双星图的IC-指数,从而证明了其2种极大IC-着色方案。

  16. Preparation and Characterization of Highly Oriented ZnO Film by Ultrasonic Assisted SILAR Method

    Institute of Scientific and Technical Information of China (English)

    GAO Xiangdong; LI Xiaomin; YU Weidong

    2005-01-01

    Ultrasonic Assisted SILAR method ( UA-SILAR ) was developed and highly oriented ZnO films were deposited on the glass substrate by this novel technique. The crystallinity and microstructure of as-deposited ZnO films were analyzed by means of XRD and SEM. Moreover, the underling deposition mechanism of ZnO films was discussed. Results show that obtained ZnO films exhibit an excellent crystallinity with the preferential orientation of (002) plane. The crystalline grain of films is about 40nm in size, which is supported by both the Sherrer equation and the SEM result. However, the ZnO film is composed of numerous clustered particulates in the size of 200 to 300 nm, and each particulate is the compact aggregation of smaller ZnO crystalline grains. It is speculated that the excellent crystallinity of ZnO films may chiefly originate from the cavatition effect of the ultrasonic rinsing process.

  17. Energy dissipation of highly charged ions on Al oxide films.

    Science.gov (United States)

    Lake, R E; Pomeroy, J M; Sosolik, C E

    2010-03-03

    Slow highly charged ions (HCIs) carry a large amount of potential energy that can be dissipated within femtoseconds upon interaction with a surface. HCI-insulator collisions result in high sputter yields and surface nanofeature creation due to strong coupling between the solid's electronic system and lattice. For HCIs interacting with Al oxide, combined experiments and theory indicate that defect mediated desorption can explain reasonably well preferential O atom removal and an observed threshold for sputtering due to potential energy. These studies have relied on measuring mass loss on the target substrate or probing craters left after desorption. Our approach is to extract highly charged ions onto the Al oxide barriers of metal-insulator-metal tunnel junctions and measure the increased conductance in a finished device after the irradiated interface is buried under the top metal layer. Such transport measurements constrain dynamic surface processes and provide large sets of statistics concerning the way individual HCI projectiles dissipate their potential energy. Results for Xe(q +) for q = 32, 40, 44 extracted onto Al oxide films are discussed in terms of postirradiation electrical device characteristics. Future work will elucidate the relationship between potential energy dissipation and tunneling phenomena through HCI modified oxides.

  18. Evaluation of Gafchromic EBT-XD film, with comparison to EBT3 film, and application in high dose radiotherapy verification

    Science.gov (United States)

    Palmer, Antony L.; Dimitriadis, Alexis; Nisbet, Andrew; Clark, Catharine H.

    2015-11-01

    There is renewed interest in film dosimetry for the verification of dose delivery of complex treatments, particularly small fields, compared to treatment planning system calculations. A new radiochromic film, Gafchromic EBT-XD, is available for high-dose treatment verification and we present the first published evaluation of its use. We evaluate the new film for MV photon dosimetry, including calibration curves, performance with single- and triple-channel dosimetry, and comparison to existing EBT3 film. In the verification of a typical 25 Gy stereotactic radiotherapy (SRS) treatment, compared to TPS planned dose distribution, excellent agreement was seen with EBT-XD using triple-channel dosimetry, in isodose overlay, maximum 1.0 mm difference over 200-2400 cGy, and gamma evaluation, mean passing rate 97% at 3% locally-normalised, 1.5 mm criteria. In comparison to EBT3, EBT-XD gave improved evaluation results for the SRS-plan, had improved calibration curve gradients at high doses, and had reduced lateral scanner effect. The dimensions of the two films are identical. The optical density of EBT-XD is lower than EBT3 for the same dose. The effective atomic number for both may be considered water-equivalent in MV radiotherapy. We have validated the use of EBT-XD for high-dose, small-field radiotherapy, for routine QC and a forthcoming multi-centre SRS dosimetry intercomparison.

  19. High temperature superconducting thin films for microwave filters

    Institute of Scientific and Technical Information of China (English)

    ZHAO; Xinjie(赵新杰); LI; Lin(李林); LEI; Chong(雷冲); TIAN; Ybngjun(田永军)

    2002-01-01

    YBa2Cu3O7-δ and Tl2Ba2CaCu2O8 thin films for microwave filters were synthesized by pulsed laser deposition and the two-step thalliation process. Substrate quality requirements and the relation of thin film morphology, microstructure with microwave surface resistance were discussed.

  20. High Power Storage System Based on Thin Film Solid Ionics.

    Science.gov (United States)

    1988-02-01

    1.8V. The redox stability range has been determined by cyclic voltametry for different preparation conditions of the films. Lithium solid state hybrid...linear sweep voltametry (LSV) technique (Dahn and Hearing, 1981). We observe that in non-annealed film the peak at 1.2 V Is very strong compared to that

  1. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  2. IC-BASED CONTROLS FOR ENERGY-EFFICIENT LIGHTING

    Energy Technology Data Exchange (ETDEWEB)

    Richard Zhang

    2005-03-01

    A new approach for driving high frequency energy saving ballasts is developed and documented in this report. The developed approach utilizes an IC-based platform that provides the benefits of reduced system cost, reduced ballast size, and universal application to a wide range of lamp technologies, such as linear fluorescent lamps (LFL), compact fluorescent lamps (CFL) and high intensity discharge lamps (HID). The control IC chip set developed for the platform includes dual low voltage (LV) IC gate drive that provides gate drive for high and low side power switches in typical ballast circuits, and ballast controller IC that provides control functionalities optimal for different lamps and digital interface for future extension to more sophisticated control and communication.

  3. Highly conductive free standing polypyrrole films prepared by freezing interfacial polymerization.

    Science.gov (United States)

    Qi, Guijin; Huang, Liyan; Wang, Huiliang

    2012-08-25

    Highly conductive free standing polypyrrole (PPy) films were prepared by a novel freezing interfacial polymerization method. The films exhibit metallic luster and electrical conductivity up to 2000 S cm(-1). By characterizing with SEM, FTIR, Raman and XRD, the high conductivity is attributed to the smooth surface, higher conjugation length and more ordered molecular structure of PPy.

  4. Pad-printed thick-film transducers for high-frequency and high-power applications

    Science.gov (United States)

    Wolny, Wanda W.; Ketterling, Jeffrey A.; Levassort, Franck; Lou-Moeller, Rasmus; Filoux, Erwan; Mamou, Jonathan; Silverman, Ronald H.; Lethiecq, Marc

    2011-03-01

    High-frequency-ultrasound transducers are widely used but are typically based either on planar piezoceramic sections that are lapped down to smaller thicknesses or on piezopolymers that may be deformed into more complex geometries. Piezoceramics then require dicing to obtain arrays or can be fractured into spherical geometries to achieve focusing. Piezopolymers are not as efficient for very small element sizes and are normally available only in discrete thicknesses. Thick-film (TF) transducers provide a means of overcoming these limits because the piezoelectric film is deposited with the required thickness, size and geometry, thus avoiding any subsequent machining. Thick-film transducers offer the potential of a wide range of geometries such as single-elements and annular or linear arrays. Here, a single-element focused transducer was developed using a piezoceramic composition adapted to high-power operation which is commonly used at standard MHz frequencies. After fabrication, the transducer was characterized. Using specific transmit-receive electronics and a water tank adapted to high-frequency devices, the transducer was excited using a short pulse to evaluate its bandwidth and imaging capabilities. Finally, it was excited by a one-period sine wave using several power levels to evaluate its capacity to produce high-intensity focused ultrasound at frequencies over 20 MHz.

  5. Highly textured oxypnictide superconducting thin films on metal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Iida, Kazumasa, E-mail: iida@nuap.nagoya-u.ac.jp; Kurth, Fritz; Grinenko, Vadim; Hänisch, Jens [Institute for Metallic Materials, IFW Dresden, D-01171 Dresden (Germany); Chihara, Masashi; Sumiya, Naoki; Hatano, Takafumi; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan); Matias, Vladimir [iBeam Materials, Inc., 2778A Agua Fria Street, Santa Fe, New Mexico 87507 (United States); Holzapfel, Bernhard [Institute for Technical Physics, Karlsruhe Institute of Technology, Hermann von Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)

    2014-10-27

    Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition-MgO/Y{sub 2}O{sub 3}/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (T{sub c}) of 43 K with a self-field critical current density (J{sub c}) of 7.0×10{sup 4} A/cm{sup 2} at 5 K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher T{sub c} as well as better crystalline quality than Co-doped BaFe{sub 2}As{sub 2} coated conductors, in-field J{sub c} of NdFeAs(O,F) was lower than that of Co-doped BaFe{sub 2}As{sub 2}. These results suggest that grain boundaries in oxypnictides reduce J{sub c} significantly compared to that in Co-doped BaFe{sub 2}As{sub 2} and, hence biaxial texture is necessary for high J{sub c.}.

  6. 75 FR 54940 - Agency Information Collection (IC) Activities; Revision of an Approved IC; Accident Recordkeeping...

    Science.gov (United States)

    2010-09-09

    ... Federal Motor Carrier Safety Administration Agency Information Collection (IC) Activities; Revision of an Approved IC; Accident Recordkeeping Requirements AGENCY: Federal Motor Carrier Safety Administration (FMCSA... revision of the Information Collection (IC) entitled, ``Accident Recordkeeping Requirements,''...

  7. High-pressure homogenization lowers water vapor permeability of soybean protein isolate-beeswax films.

    Science.gov (United States)

    Zhang, Chao; Ma, Yue; Guo, Kuan; Zhao, Xiaoyan

    2012-03-07

    Soybean-protein isolate (SPI) has excellent film-forming capacity. However, the water vapor permeability of SPI film is high, which will cause the moisture lose of packaged products. The effect of high-pressure homogenization (HPH) on the water vapor permeability of SPI-beeswax films was evaluated. The HPH was effective at lowering the water vapor permeability of SPI-beeswax films to about 50% of the control. The HPH reduced the particle size of films and made their matrix more compact. The HPH improved the hydrophobicity of SPI-beeswax films. For the first time, we proved that the HPH improved the bound-beeswax content in SPI-beeswax films. The bound beeswax was effective at lowering the water vapor permeability of films rather than the free beeswax in the film matrix. In summary, the HPH lowered water vapor permeability of SPI-beeswax films by reducing their particle size and raising their hydrophobicity and bound-beeswax content.

  8. Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

    Science.gov (United States)

    Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

    2016-08-01

    A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm-2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

  9. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  10. Institutional computing (IC) information session

    Energy Technology Data Exchange (ETDEWEB)

    Koch, Kenneth R [Los Alamos National Laboratory; Lally, Bryan R [Los Alamos National Laboratory

    2011-01-19

    The LANL Institutional Computing Program (IC) will host an information session about the current state of unclassified Institutional Computing at Los Alamos, exciting plans for the future, and the current call for proposals for science and engineering projects requiring computing. Program representatives will give short presentations and field questions about the call for proposals and future planned machines, and discuss technical support available to existing and future projects. Los Alamos has started making a serious institutional investment in open computing available to our science projects, and that investment is expected to increase even more.

  11. Computing fundamentals IC3 edition

    CERN Document Server

    Wempen, Faithe

    2014-01-01

    Kick start your journey into computing and prepare for your IC3 certification With this essential course book you'll be sending e-mails, surfing the web and understanding the basics of computing in no time. Written by Faithe Wempen, a Microsoft Office Master Instructor and author of more than 120 books, this complete guide to the basics has been tailored to provide comprehensive instruction on the full range of entry-level computing skills. It is a must for students looking to move into almost any profession, as entry-level computing courses have become a compulsory requirement in the modern w

  12. Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.

    Science.gov (United States)

    Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae

    2014-04-23

    A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. SEM probe of IC radiation sensitivity

    Science.gov (United States)

    Gauthier, M. K.; Stanley, A. G.

    1979-01-01

    Scanning Electron Microscope (SEM) used to irradiate single integrated circuit (IC) subcomponent to test for radiation sensitivity can localize area of IC less than .03 by .03 mm for determination of exact location of radiation sensitive section.

  14. Seed layer technique for high quality epitaxial manganite films

    Science.gov (United States)

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O’Shea, K.; MacLaren, D. A.; Bergenti, I.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-01-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived. PMID:27648371

  15. Seed layer technique for high quality epitaxial manganite films

    Directory of Open Access Journals (Sweden)

    P. Graziosi

    2016-08-01

    Full Text Available We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  16. High light transmission through thin absorptive corrugated films.

    Science.gov (United States)

    Dmitruk, Nicolas L; Korovin, Alexander V

    2008-05-01

    The enhancement of light transmittance through periodically relief thin absorptive film at surface plasmon polariton excitation conditions, as a function of relief interrelation, was considered theoretically. Our calculation of transmittance-reflectance through periodically relief thin absorptive film was performed in the framework of differential formalism. There are two basic relief interrelation forms, namely, correlated and anticorrelated ones. The obtained spectral and angular dependencies demonstrate an essential increase of surface plasmon polariton peaks in the case of anticorrelated corrugation of film in comparison with the correlated ones.

  17. A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

    Science.gov (United States)

    Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

    2015-05-01

    This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

  18. The eight-channel fast comparator IC

    CERN Document Server

    Alexeev, G D; Dvornikov, O V; Mikhailov, V A; Odnokloubov, I A; Tokmenin, V V

    1999-01-01

    The eight-channel fast comparator IC has been designed for high-energy physics experiments. The propagation delay is 15-36 ns and will be decreased to 7-11 ns. The output front/trailing edges are 2.2 ns and 1.8 ns at matched 110 OMEGA load. Dissipated power equals 84 mW/channel. The circuit current output can drive 30 m flat ribbon cable or twisted pair line terminated by differential line driver DS90C031.

  19. Electrodeposition of Sm–Co film with high Sm content from aqueous solution

    Energy Technology Data Exchange (ETDEWEB)

    Long, Xiong-fei; Guo, Guang-hua, E-mail: guogh@mail.csu.edu.cn; Li, Xin-hua; Xia, Qing-lin; Zhang, Jin-fang

    2013-12-02

    Sm–Co films with high Sm content were electrodeposited by potentiostat technique from the aqueous solution containing glycine as a complexing agent. The Cyclic Voltammetry measurements showed that the glycine plays a crucial role in the electrodeposition of Sm–Co films. The forming of stable complex [Co{sup II}Sm{sup III}(Gly{sup −}){sub 2}(HGly{sup ±})]{sup 3+} facilitated the codeposition of Sm with Co at relatively low potential, which made it possible to fabricate the Sm–Co films with high Sm content. The Sm–Co film with 43 at.% Sm had been obtained. X-ray diffraction showed that the as-deposited Sm–Co films were amorphous. After annealing at 600 °C for 2 h in Ar atmosphere, the films became crystalline and the permanent Sm{sub 2}Co{sub 17} phase was formed, which significantly enhanced the coercivity of the films. - Highlights: • The Sm–Co film with high Sm content is electrodeposited from aqueous solutions. • The addition of glycine facilitates the codeposition of Sm with Co at relatively low potential. • The Sm{sub 2}Co{sub 17} phase is formed in the annealed Sm–Co film.

  20. High quality uniform YBCO film growth by the metalorganic deposition using trifluoroacetates

    Science.gov (United States)

    Wang, S. S.; Zhang, Z. L.; Wang, L.; Gao, L. K.; Liu, J.

    2017-03-01

    A need exists for the large-area superconducting YBa2Cu3O7-x (YBCO) films with high critical current density for microwave communication and/or electric power applications. Trifluoroacetic metalorganic (TFA-MOD) method is a promising low cost technique for large-scale production of YBCO films, because it does not need high vacuum device and is easily applicable to substrates of various shape and size. In this paper, double-sided YBCO films with maximum 2 in diameter were prepared on LaAlO3 substrates by TFA-MOD method. Inductive critical current densitiy Jc, microwave surface resistance Rs, as well as the microstructure were characterized. A newly homemade furnace system was used to epitaxially grown YBCO films, which can improve the uniformity of YBCO film significantly by gas supply and temperature distribution proper design. Results showed that the large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive Jc in excess of 6 MA/cm2 with uniform distribution, and low Rs (10 GHz) below 0.3 mΩ at 77 K were obtained. Andthe film filter may be prepared to work at temperatures lower than 74 K. These results are very close to the highest value of YBCO films made by conventional vacuum method, so we show a very promising route for large-scale production of high quality large-area YBCO superconducting films at a lower cost.

  1. Structure, electrical characteristics, and high-temperature stability of aerosol jet printed silver nanoparticle films

    Science.gov (United States)

    Rahman, Md Taibur; McCloy, John; Ramana, C. V.; Panat, Rahul

    2016-08-01

    Printed electronics has emerged as a versatile eco-friendly fabrication technique to create sintered nanoparticle (NP) films on arbitrary surfaces with an excellent control over the film microstructure. While applicability of such films for high-temperature applications is not explored previously, herein we report the high-temperature electrical stability of silver (Ag) metal NP films fabricated using an Aerosol Jet based printing technique and demonstrate that this behavior is dictated by changes in the film microstructure. In-situ high temperature (24-500 °C) impedance spectroscopy measurements show that the real part of the impedance increases with increasing temperature up to 150 °C, at which point a decreasing trend prevails until 300 °C, followed again by an increase in impedance. The electrical behavior is correlated with the in-situ grain growth of the Ag NP films, as observed afterwards by scanning electron microscopy and X-ray diffraction (XRD), and could be tailored by controlling the initial microstructure through sintering conditions. Using combined diffraction and spectroscopic analytical methods, it is demonstrated the Aerosol Jet printed Ag NP films exhibit enhanced thermal stability and oxidation resistance. In addition to establishing the conditions for stability of Ag NP films, the results provide a fundamental understanding of the effect of grain growth and reduction in grain boundary area on the electrical stability of sintered NP films.

  2. High strain rate sensitivity of hardness in quinary Ti-Zr-Hf-Cu-Ni high entropy metallic glass thin films

    Science.gov (United States)

    Zhao, Shaofan; Wang, Haibin; Xiao, Lin; Guo, Nan; Zhao, Delin; Yao, Kefu; Chen, Na

    2017-10-01

    Quinary Ti-Zr-Hf-Cu-Ni high-entropy metallic glass thin films were produced by magnetron sputter deposition. Nanoindentation tests indicate that the deposited film exhibits a relatively large hardness of 10.4±0.6 GPa and a high elastic modulus of 131±11 GPa under the strain rate of 0.5 s-1. Specifically, the strain rate sensitivity of hardness measured for the thin film is 0.05, the highest value reported for metallic glasses so far. Such high strain rate sensitivity of hardness is likely due to the high-entropy effect which stabilizes the amorphous structure with enhanced homogeneity.

  3. Acoustic source data for medium speed IC-engines

    OpenAIRE

    Hynninen, A.; Turunen, R.; Åbom, Mats; Bodén, Hans

    2011-01-01

    Knowledge of the acoustic source characteristics of internal combustion engines (IC-engines) is of great importance when designing the exhaust duct system and its components to withstand the resulting dynamic loads and to reduce the exhaust noise emission. Number of studies has been published earlier on the low frequency in-duct exhaust noise of high speed engines. The goal of the present study is to investigate the medium speed IC-engine acoustic source characteristics numerically and experi...

  4. Silicone Adhesives for High Temperature Inflatable Fabrics and Polymer Films Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Thin films, elastomeric materials, high temperature fabrics and adhesives that are capable of withstanding thermal extremes (-130oC to 500oC) are highly desirable...

  5. Growth of cuprate high temperature superconductor thin films

    Directory of Open Access Journals (Sweden)

    H-U Habermeier

    2006-09-01

    Full Text Available   This paper reviews briefly the development of physical vapour deposition based HTS thin film preparation technologies to today’s state-of-the-art methods. It covers the main trends of in-situ process and growth control. The current activities to fabricate tapes for power applications as well as to tailor interfaces in cuprate are described. Some future trends in HTS thin film research, both for science as well as application driven activities are outlined.

  6. Liquid fuel film ignition delay times on the substrate heated up to high temperatures

    Directory of Open Access Journals (Sweden)

    Antonov D.V.

    2015-01-01

    Full Text Available Heat and mass transfer processes under the conditions of unsteady evaporation and boiling of the liquid fuel film in coordination with the substrate heated up to high temperatures were investigated. The film thickness values and the substrate temperature (whereby the ignition conditions are not implemented were determined. The film thickness values and the substrate temperature (whereby as low as practicable ignition delay times are provided were found. The differences of liquid fuel film ignition condition under the local heating and the interoperating with the massive heating source were analyzed.

  7. Interaction of microwave radiation with high-Tc films of different microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Konopka, J.; Jung, G.; Gierlowski, P.; Kula, W.; Konopka, A.; Lewandowski, S.J. (Inst. of Physics, Polish Academy of Sciences, Warszawa (Poland)); Sobolewski, R. (Inst. of Physics, Polish Academy of Sciences, Warszawa (Poland) Dept. of Electrical Engineering, Univ. of Rochester, NY (USA))

    1989-12-01

    We performed microwave detection and emission experiments on Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O thin films fabricated on several crystalline substrates using a chemical-spray technique and a dc-magnetron-sputtering process. Our experiments revealed a strong correlation between the film microstructure and its microwave properties. Most pronounced nonlinear effects were observed in highly granular Y-Ba-Cu-O films deposited on ZrO{sub 2}. Improvement in the film microstructure led to a substantial decrease of the microwave noise emission. (orig.).

  8. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  9. SURFACE FILMS TO SUPPRESS FIELD EMISSION IN HIGH-POWER MICROWAVE COMPONENTS

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay l

    2014-02-07

    Results are reported on attempts to reduce the RF breakdown probability on copper accelerator structures by applying thin surface films that could suppress field emission of electrons. Techniques for application and testing of copper samples with films of metals with work functions higher than copper are described, principally for application of platinum films, since platinum has the second highest work function of any metal. Techniques for application of insulating films are also described, since these can suppress field emission and damage on account of dielectric shielding of fields at the copper surface, and on account of the greater hardness of insulating films, as compared with copper. In particular, application of zirconium oxide films on high-field portions of a 11.424 GHz SLAC cavity structure for breakdown tests are described.

  10. Wetting behavior of high energy electron irradiated porous superhydrophobic silica films

    Energy Technology Data Exchange (ETDEWEB)

    Rao, A. Venkateswara, E-mail: avrao2012@gmail.com [Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra (India); Latthe, Sanjay S. [Air Glass Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra (India); Kappenstein, Charles [University of Poitiers, Laboratory of Catalysis in Organic Chemistry, LA CCO, UMR CNRS 6503, Poitiers 86000 (France); Ganesan, V. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Raod, Indore 452001, MP (India); Rath, M.C. [Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India); Sawant, Shilpa N. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)

    2011-01-15

    The nature of adhesive forces between water and hydrophobic materials has been a subject of great interest. The influence of high energy electron irradiation (7 MeV) on wetting behavior of superhydrophobic silica films has been investigated. The results of surface morphological study suggest that the porous morphology of pristine (non-irradiated) silica film was changed to compact morphology after electron irradiation (of energy 7 MeV). The experiments showed that a gradual decrease in static water contact angle (SWCA); whereas an abrupt increase in water sliding angle (WSA) of irradiated silica film. The water droplets easily roll off on the pristine silica films, whereas the water droplet does not slide on the irradiated silica film surface even when the surface is tilted vertically or turned upside down. We characterized the pristine and irradiated silica films by Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), atomic force microscopy (AFM), and static and dynamic water contact angle measurements.

  11. Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

    Directory of Open Access Journals (Sweden)

    Pei-Chung Lin

    2016-08-01

    Full Text Available Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 °C are saturation magnetization 9.13 × 105 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 103 A/m, and electrical resistivity 3.75 μΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

  12. High Resistive ZnO/Diamond/Si Films Grown via Metal-organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YANG Hong-jun; ZHAO Bai-jun; FANG Xiu-jun; DU Guo-tong; LIU Da-li; GAO Chun-xiao; LIU Xi-zhe

    2005-01-01

    Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with (111) orientation via metal-organic chemical vapour deposition.The characteristics of the films were optimized through different growth methods. The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the n(Zn)/n(O) ratio is near 1. The Raman scattering was also performed in back scattering configuration. E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods.

  13. A highly selective and wide range ammonia sensor—Nanostructured ZnO:Co thin film

    Energy Technology Data Exchange (ETDEWEB)

    Mani, Ganesh Kumar, E-mail: ganesh@eee.sastra.edu; Rayappan, John Bosco Balaguru, E-mail: rjbosco@ece.sastra.edu

    2015-01-15

    Graphical abstract: - Highlights: • Cobalt doped nanostructured ZnO thin films were spray deposited on glass substrates. • Co-doped ZnO film was highly selective towards ammonia than ethanol, methanol, etc. • The range of ammonia detection was improved significantly by doping cobalt in ZnO. - Abstract: Ammonia sensing characteristics of undoped and cobalt (Co)-doped nanostructured ZnO thin films were investigated. Polycrystalline nature with hexagonal wurtzite structure and high crystalline quality with dominant (0 0 2) plane orientation of Co-doped ZnO film were confirmed by the X-ray diffractogram. Scanning electron micrographs of the undoped film demonstrated the uniform deposition of sphere-shaped grains. But, smaller particles with no clear grain boundaries were observed for Co-doped ZnO thin film. Band gap values were found to be 3.26 eV and 3.22 eV for undoped and Co-doped ZnO thin films. Ammonia sensing characteristics of Co-doped ZnO film at room temperature were investigated in the concentration range of 15–1000 ppm. Variation in the sensing performances of Co-doped and pure ZnO thin films has been analyzed and compared.

  14. Magnetic properties of high Li doped ZnO sol–gel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vettumperumal, R. [P.G and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi (India); Kalyanaraman, S., E-mail: mayura_priya2003@yahoo.co.in [P.G and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi (India); Santoshkumar, B. [P.G and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi (India); Thangavel, R. [Department of Physics, Indian School of Mines, Dhanbad (India)

    2014-02-01

    Highlights: • Ferromagnetism in high Li doped ZnO films. • Magnetic properties observed by Guoy's and VSM method. • The rod and wrinkle like structures are observed from the surface of the films. • Band gap of ZnO does not get altered by high Li doping. - Abstract: Undoped and Li doped ZnO thin films were deposited on a glass substrate using the sol–gel dip coating method. The films were prepared at 5 mol.% and 10 mol.% of Li doped ZnO at 550 °C annealing temperature and the deposited films were characterized by X-ray diffraction (XRD), microscopic studies, Gouy's method, vibrating sample magnetometer (VSM) and UV–visible spectroscopy. All the deposited thin films had a hexagonal wurtzite structure with polycrystalline grains at random. Primarily magnetic properties of pure and Li doped ZnO films were observed by Guoy's method which depicted Dia and Para magnetic behavior at room temperature. VSM measurement reveals a coercivity of 97.7 Oe in the films. An inverse relative ferromagnetism was perceived in Li doped ZnO films which had an average transmission of <90%.

  15. Hydro-oleophobic silica antireflective films with high laser-damage threshold

    Science.gov (United States)

    Yan, Lianghong; Lv, Haibing; Wang, Chengcheng; Yuan, Xiaodong

    2011-02-01

    A simple method of preparing hydro-oleophobic anitreflective films with high laser-damage threshold is reported in this article. By adding fluoroalkylsilanes (FAS) into reactant mixture as a co-precursor, FAS modified SiO 2 was obtained under base catalyzed hydrolysis and condensation of tetraethoxysilane. The dip-coating films were deposited on two sides of fused silica substrates. The experimental results on the effect of adding fluoroalkylsilanes (FAS) as a co-precursor on the hydro-oleophobicity and optical properties of tetraethoxysilane (TEOS) based silica AR films, are reported. The hydro-oleophobicity of the films was tested by the contact angle measurements and the highest water contact angle of 136° and oil (peanut) contact angle of 93° were obtained. The surface chemical modification of the hydro-oleophobic films was confirmed using Fourier transform infrared spectroscopy (FTIR). For the films based on FAS and TEOS, additional absorption bands at 1100 cm -1 corresponding to C-F bond presented, clearly indicating the organic modification of the films. The highest optical transmittance of the hydro-oleophobic films was found to be 99.5%. By a Nd:YAG lasers the laser-damage threshold of as-deposited films was measured at 351 nm wavelength (1 ns). The laser-damage threshold was as high as 22.6 J/cm 2.

  16. High-frequency properties of discontinuous FeCoSi/native-oxide multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Zuo Huaping [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Ge Shihui [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China)], E-mail: gesh@lzu.edu.cn; Wang Zhenkun; Xiao Yuhua; Yao Dongsheng; Li Yanbo [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

    2009-10-15

    Discontinuous [FeCoSi (d)/native-oxide]{sub 50} multilayer films were fabricated by DC magnetron sputtering without any post-deposition treatment. The films exhibit good soft magnetic properties with initial permeability {mu}{sub i} larger than 100, the saturation magnetization 4{pi}M{sub s} and the in-plane uniaxial anisotropy field H{sub k} increase as the magnetic FeCoSi layer thickness d is increased from 5.5 to 20.5 A. As a consequence, the ferromagnetic resonance frequencies f{sub r} of the films increase from 2.0 to 3.9 GHz. The combination of high f{sub r} and large {mu}{sub i} makes these films potential candidates for magnetic devices applied in the high-frequency range. The origin of the excellent high-frequency properties in discontinuous FeCoSi/native-oxide multilayer films is discussed.

  17. High-speed Data Sampling by Multi-phase Clocks in IC Design%分相位时钟组的高速数据采样

    Institute of Scientific and Technical Information of China (English)

    张娅娅; 张磊; 崔海龙

    2012-01-01

    High-speed mix of digital and analog circuits should accurately sample the data which is produced by the analog circuits in real time. High-speed data sampling can be solved by the multi -phase clocks. In the physical design stage,the clock sources can be provided by high-performance phase locked loop and delayed phase locked loop which are designed manually; in the logic synthesis stage, the clock constrains are consistent ,and the group clock can be simulated by the dynamic simulation tools in multi-models. The time sequence can be improved and the pressure of layout wiring can be mitigated effectively by the multi-phase clocks.%高速的数模混合电路设计通常要求对模拟信号产生的数据进行实时准确采样。介绍了基于分相位时钟组的高速数据采样电路,并手工设计一款高性能锁相环和延时锁相环来产生数字电路时钟组,加载特定的逻辑综合约束,最终使用动态仿真工具进行电路仿真。仿真结果表明在使用分相位时钟组实现高速数据采样的同时,还可以有效地改善时序和布局布线的压力。

  18. Luminescent metal-organic framework films as highly sensitive and fast-response oxygen sensors.

    Science.gov (United States)

    Dou, Zhongshang; Yu, Jiancan; Cui, Yuanjing; Yang, Yu; Wang, Zhiyu; Yang, Deren; Qian, Guodong

    2014-04-16

    Luminescent metal-organic framework films, CPM-5⊃Tb(3+) and MIL-100(In)⊃Tb(3+), have been constructed by postfunctionalization of two porous indium-organic frameworks with different structures, respectively. The MIL-100(In)⊃Tb(3+) film shows high oxygen sensitivity (KSV = 7.59) and short response/recovery time (6 s/53 s).

  19. Highly-charged-ion-induced electron emission from C-60 thin films

    NARCIS (Netherlands)

    Bodewits, E.; Hoekstra, R.; Kowarik, G.; Dobes, K.; Aumayr, F.

    2011-01-01

    The secondary electron yields as a result of highly charged ions impinging on clean Au(111) and thin films of C-60 on Au have been measured. This has been done for film thicknesses of one to five monolayers and several charge states of Ar and Xe ions. For all ions an increase of 35% in the secondary

  20. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

    NARCIS (Netherlands)

    Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2013-01-01

    A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ∼50 ml/min (STP) at ∼850

  1. The Ring Counter (RCo): A high resolution IC-Si-CsI(Tl) device for heavy ion reaction studies at 10-30 MeV/A

    Energy Technology Data Exchange (ETDEWEB)

    Moroni, A.; Brambilla, S.; Giussani, A. [Istituto Nazionale di Fisica Nucleare, Sezione di Milano and Dipartimento di Fisica dell' Universita, Milan (Italy); Bruno, M. [Istituto Nazionale di Fisica Nucleare, Sezionedi Bologna and Dipartimento di Fisica dell' Universita, Bologna (Italy); Bardelli, L. [Istituto Nazionale di Fisica Nucleare, Sezione di Firenze and Dipartimento di Fisica dell' Universita, Florence (Italy); Barlini, S. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro (Italy); Casini, G. [Istituto Nazionale di Fisica Nucleare, Sezione di Firenze and Dipartimento di Fisica dell' Universita, Florence (Italy); Cavaletti, R. [Istituto Nazionale di Fisica Nucleare, Sezionedi Bologna and Dipartimento di Fisica dell' Universita, Bologna (Italy); Chiari, M. [Istituto Nazionale di Fisica Nucleare, Sezione di Firenze and Dipartimento di Fisica dell' Universita, Florence (Italy); Cortesi, A. [Istituto Nazionale di Fisica Nucleare, Sezione di Milano and Dipartimento di Fisica dell' Universita, Milan (Italy); D' Agostino, M. [Istituto Nazionale di Fisica Nucleare, Sezionedi Bologna and Dipartimento di Fisica dell' Universita, Bologna (Italy)]. E-mail: dagostino@bo.infn.it; De Sanctis, J. [Istituto Nazionale di Fisica Nucleare, Sezionedi Bologna and Dipartimento di Fisica dell' Universita, Bologna (Italy); Geraci, E. [Istituto Nazionale di Fisica Nucleare, Sezionedi Bologna and Dipartimento di Fisica dell' Universita, Bologna (Italy); Giordano, G. [Istituto Nazionale di Fisica Nucleare, Sezione di Napoli and Dipartimento di Fisica dell' Universita, Napoli (Italy); Gramegna, F. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro (Italy); Guiot, B. [Istituto Nazionale di Fisica Nucleare, Sezionedi Bologna and Dipartimento di Fisica dell' Universita, Bologna (Italy); Kravchuk, V.; Lanchais, A. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro (Italy)] [and others

    2006-01-15

    An annular detector (Ring Counter, RCo) is presented, which has been designed and built to detect and identify in mass and charge light charged particles and fragments with very low energy thresholds and high energy resolution. It complements the GARFIELD apparatus, operating at INFN Laboratori Nazionali di Legnaro, to detect the forward emitted products of nuclear heavy ion reactions. It consists of eight sectors of a three-stage telescope, each one formed by an ionization chamber followed by eight strips of a silicon detector and by two CsI(Tl) scintillators. Construction features and performances are described and discussed in details.

  2. The Ring Counter (RCo): A high resolution IC Si CsI(Tl) device for heavy ion reaction studies at 10 30 MeV/A

    Science.gov (United States)

    Moroni, A.; Bruno, M.; Bardelli, L.; Barlini, S.; Brambilla, S.; Casini, G.; Cavaletti, R.; Chiari, M.; Cortesi, A.; D'Agostino, M.; De Sanctis, J.; Geraci, E.; Giordano, G.; Giussani, A.; Gramegna, F.; Guiot, B.; Kravchuk, V.; Lanchais, A.; Margagliotti, G. V.; Nannini, A.; Ordine, A.; Piantelli, S.; Vannini, G.; Vannucci, L.

    2006-01-01

    An annular detector (Ring Counter, RCo) is presented, which has been designed and built to detect and identify in mass and charge light charged particles and fragments with very low energy thresholds and high energy resolution. It complements the GARFIELD apparatus, operating at INFN Laboratori Nazionali di Legnaro, to detect the forward emitted products of nuclear heavy ion reactions. It consists of eight sectors of a three-stage telescope, each one formed by an ionization chamber followed by eight strips of a silicon detector and by two CsI(Tl) scintillators. Construction features and performances are described and discussed in details.

  3. Achieving high thermal conductivity from AlN films deposited by high-power impulse magnetron sputtering

    Science.gov (United States)

    Ait Aissa, K.; Semmar, N.; Achour, A.; Simon, Q.; Petit, A.; Camus, J.; Boulmer-Leborgne, C.; Djouadi, M. A.

    2014-09-01

    We report on thermal conductivity measurements of aluminum nitride (AlN) films using the fast pulsed photo-thermal technique. The films were deposited by high-power impulse magnetron sputtering with different thicknesses ranging from 1000 to 8000 nm on (1 0 0) oriented silicon substrates. The films were characterized by x-ray diffraction (XRD), Raman spectroscopy, profilometry, scanning electron microscopy and atomic force microscopy. The XRD measurements showed that AlN films were textured along the (0 0 2) direction. Moreover, x-ray rocking curve measurements indicated that the crystalline quality of AlN was improved with the increase in film thickness. The thermal conductivities of the samples were found to rapidly increase when the film thickness increased up to 3300 nm and then showed a tendency to remain constant. A thermal boundary resistance as low as 8 × 10-9 W-1 K m2 and a thermal conductivity as high as 250 ± 50 W K-1 m-1 were obtained for the AlN films, at room temperature. This high thermal conductivity value is close to that of an AlN single crystal and highlights the potential of these films as a dielectric material for thermal management.

  4. Fabrication of highly crystalline oxide thin films on plastics: Sol–gel transfer technique involving high temperature process

    Directory of Open Access Journals (Sweden)

    Hiromitsu Kozuka

    2016-09-01

    Full Text Available Si(100 substrates were coated with a polyimide (PI–polyvinylpyrrolidone (PVP mixture film, and an alkoxide-derived TiO2 gel film was deposited on it by spin-coating. The gel films were fired under various conditions with final annealing at 600–1000 °C. The PI–PVP layer was completely decomposed at such high temperatures while the TiO2 films survived on Si(100 substrates without any damages. When the final annealing temperature was raised, the crystalline phase changed from anatase to rutile, and the crystallite size and the refractive index of the films tended to increase. The TiO2 films thus fired on Si(100 substrates were transferred to polycarbonate (PC substrates by melting the surface of the plastic substrate either in a near-infrared image furnace or on a hot plate under a load. Cycles of deposition and firing were found to be effective in achieving successful transfer even for the films finally annealed at 1000 °C. X-ray photoelectron spectroscopic analyses on the film/Si(100 interface suggested that the residual carbon or carbides at the interface could be a possible factor, but not a necessary and decisive factor that allows the film transfer.

  5. Photometric study of IC 2156

    CERN Document Server

    Tadross, A L

    2015-01-01

    The optical UBVRI photometric analysis has been established using SLOAN DIGITAL SKY SURVEY (SDSS database) in order to estimate the astrophysical parameters of poorly studied open star cluster IC 2156. The results of the present study are compared with a previous one of ours, which relied on the 2MASS JHK infrared photometry. The stellar density distributions and color-magnitude diagrams of the cluster are used to determine the geometrical structure; limited radius, core and tidal radii, the distances from the Sun, from the Galactic plane and from the Galactic center. Also, the main photometric parameters; age, distance modulus, color excesses, membership, total mass, luminosity, mass functions and relaxation time; have been estimated.

  6. Spitzer Observations of IC 2118

    CERN Document Server

    Guieu, S; Stauffer, J R; Vrba, F J; Noriega-Crespo, A; Spuck, T; Moody, T Roelofsen; Sepulveda, B; Weehler, C; Maranto, A; Cole, D M; Flagey, N; Laher, R; Penprase, B; Ramirez, S; Stolovy, S

    2010-01-01

    IC 2118, also known as the Witch Head Nebula, is a wispy, roughly cometary, ~5 degree long reflection nebula, and is thought to be a site of triggered star formation. In order to search for new young stellar objects (YSOs), we have observed this region in 7 mid- and far-infrared bands using the Spitzer Space Telescope and in 4 bands in the optical using the U. S. Naval Observatory 40-inch telescope. We find infrared excesses in 4 of the 6 previously-known T Tauri stars in our combined infrared maps, and we find 6 entirely new candidate YSOs, one of which may be an edge-on disk. Most of the YSOs seen in the infrared are Class II objects, and they are all in the "head" of the nebula, within the most massive molecular cloud of the region.

  7. Large magnetization and high Curie temperature in highly disordered nanoscale Fe2CrAl thin films

    Science.gov (United States)

    Dulal, Rajendra P.; Dahal, Bishnu R.; Forbes, Andrew; Pegg, Ian L.; Philip, John

    2017-02-01

    We have successfully grown nanoscale Fe2CrAl thin films on polished Si/SiO2 substrates using an ultra-high vacuum deposition with a base pressure of 9×10-10 Torr. The thickness of thin films ranges from 30 to 100 nm. These films exhibit cubic crystal structure with lattice disorder and display ferromagnetic behavior. The Curie temperature is greater than 400 K, which is much higher than that reported for bulk Fe2CrAl. The magnetic moments of the films varies from 2.5 to 2.8 μB per formula unit, which is larger than the reported bulk values. Thus, the disordered nanoscale Fe2CrAl films exhibit strong Fe-Fe exchange interactions through Fe-Cr-Fe and Fe-Al-Fe layers, resulting in both a large magnetization and a high Curie temperature.

  8. Properties of Diamond Film/Alumina Composites for Integrated Circuits with Ultra-High Speed and High Power

    Institute of Scientific and Technical Information of China (English)

    WANG Lin-Jun; XIA Yi-Ben; FANG Zhi-Jun; ZHANG Ming-Long; SHEN Hu-Jiang

    2004-01-01

    @@ We report the properties of the diamond film/alumina composites which were thought of as promising substrate materials for integrated circuits with ultra-high speed and high power. The measurement results of dielectric properties of diamond film/alumina composites show that the coating of CVD diamond films could effectively reduce the dielectric constant of the composite. Carbon ion implantation into alumina substrates prior to the diamond deposition can reduce the dielectric loss of the composite from 5 × 10-3 to 2 × 10-3, and can give the composite better frequency stability. The thermal conductivity of composites could be obviously increased by coating CVD diamond film. The composite has a dielectric constant of 6.5 and a thermal conductivity of 3.98 W/(cmK) when the thickness of diamond film is up to 100 μm.

  9. Latency represents sound frequency in mouse IC

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Frequency is one of the fundamental parameters of sound.The frequency of an acoustic stimulus can be represented by a neural response such as spike rate,and/or first spike latency(FSL)of a given neuron.The spike rates/frequency function of most neurons changes with different acoustic ampli-tudes,whereas FSL/frequency function is highly stable.This implies that FSL might represent the fre-quency of a sound stimulus more efficiently than spike rate.This study involved representations of acoustic frequency by spike rate and FSL of central inferior colliculus(IC)neurons responding to free-field pure-tone stimuli.We found that the FSLs of neurons responding to characteristic frequency(CF)of sound stimulus were usually the shortest,regardless of sound intensity,and that spike rates of most neurons showed a variety of function according to sound frequency,especially at high intensities.These results strongly suggest that FSL of auditory IC neurons can represent sound frequency more precisely than spike rate.

  10. Latency represents sound frequency in mouse IC

    Institute of Scientific and Technical Information of China (English)

    QIU Qiang; TANG Jie; YU ZuLin; ZHANG Juan; ZHOU YingJie; XIAO ZhongJu; SHEN JunXian

    2007-01-01

    Frequency is one of the fundamental parameters of sound. The frequency of an acoustic stimulus can be represented by a neural response such as spike rate, and/or first spike latency (FSL) of a given neuron. The spike rates/frequency function of most neurons changes with different acoustic amplitudes, whereas FSL/frequency function is highly stable. This implies that FSL might represent the frequency of a sound stimulus more efficiently than spike rate. This study involved representations of acoustic frequency by spike rate and FSL of central inferior colliculus (IC) neurons responding to free-field pure-tone stimuli. We found that the FSLs of neurons responding to characteristic frequency (CF) of sound stimulus were usually the shortest, regardless of sound intensity, and that spike rates of most neurons showed a variety of function according to sound frequency, especially at high intensities.These results strongly suggest that FSL of auditory IC neurons can represent sound frequency more precisely than spike rate.

  11. High-frequency applications of high-temperature superconductor thin films

    Science.gov (United States)

    Klein, N.

    2002-10-01

    High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz.

  12. Highly textured and transparent RF sputtered Eu2O3 doped ZnO films.

    Science.gov (United States)

    Sreedharan, Remadevi Sreeja; Ganesan, Vedachalaiyer; Sudarsanakumar, Chellappan Pillai; Bhavsar, Kaushalkumar; Prabhu, Radhakrishna; Mahadevan Pillai, Vellara Pappukutty Pillai

    2015-01-01

    Background : Zinc oxide (ZnO) is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. Methods : Europium oxide (Eu2O3) doped ZnO films are prepared on quartz substrate using radio frequency (RF) magnetron sputtering with doping concentrations 0, 0.5, 1, 3 and 5 wt%. The films are annealed in air at a temperature of 773 K for 2 hours. The annealed films are characterized using X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy, ultraviolet (UV)-visible spectroscopy and photoluminescence (PL) spectroscopy. Results : XRD patterns show that the films are highly c-axis oriented exhibiting hexagonalwurtzite structure of ZnO. Particle size calculations using Debye-Scherrer formula show that average crystalline size is in the range 15-22 nm showing the nanostructured nature of the films. The observation of low- and high-frequency E2 modes in the Raman spectra supports the hexagonal wurtzite structure of ZnO in the films. The surface morphology of the Eu2O3 doped films presents dense distribution of grains. The films show good transparency in the visible region. The band gaps of the films are evaluated using Tauc plot model. Optical constants such as refractive index, dielectric constant, loss factor, and so on are calculated using the transmittance data. The PL spectra show both UV and visible emissions. Conclusion : Highly textured, transparent, luminescent Eu2O3 doped ZnO films have been synthesized using RF magnetron sputtering. The good optical and structural properties and intense luminescence in the ultraviolet and visible regions from the films suggest their suitability for optoelectronic applications.

  13. Study on the effect of subcooling on vapor film collapse on high temperature particle surface

    Energy Technology Data Exchange (ETDEWEB)

    Abe, Yutaka; Tochio, Daisuke; Yanagida, Hiroshi [Department of Mechanical Systems Engineering, Yamagata Univ., Yonezawa, Yamagata (Japan)

    2000-11-01

    Thermal detonation model is proposed to describe vapor explosion. According to this model, vapor film on pre-mixed high temperature droplet surface is needed to be collapsed for the trigger of the vapor explosion. It is pointed out that the vapor film collapse behavior is significantly affected by the subcooling of low temperature liquid. However, the effect of subcooling on micro-mechanism of vapor film collapse behavior is not experimentally well identified. The objective of the present research is to experimentally investigate the effect of subcooling on micro-mechanism of film boiling collapse behavior. As the results, it is experimentally clarified that the vapor film collapse behavior in low subcooling condition is qualitatively different from the vapor film collapse behavior in high subcooling condition. In case of vapor film collapse by pressure pulse, homogeneous vapor generation occurred all over the surface of steel particle in low subcooling condition. On the other hand, heterogeneous vapor generation was observed for higher subcooling condition. In case of vapor film collapse spontaneously, fluctuation of the gas-liquid interface after quenching propagated from bottom to top of the steel particle heterogeneously in low subcooling condition. On the other hand, simultaneous vapor generation occurred for higher subcooling condition. And the time transient of pressure, particle surface temperature, water temperature and visual information were simultaneously measured in the vapor film collapse experiment by external pressure pulse. Film thickness was estimated by visual data processing technique with the pictures taken by the high-speed video camera. Temperature and heat flux at the vapor-liquid interface were estimated by solving the heat condition equation with the measured pressure, liquid temperature and vapor film thickness as boundary conditions. Movement of the vapor-liquid interface were estimated with the PIV technique with the visual observation

  14. Highly textured and transparent RF sputtered Eu2O3 doped ZnO films

    Directory of Open Access Journals (Sweden)

    Remadevi Sreeja Sreedharan

    2015-03-01

    Full Text Available Background: Zinc oxide (ZnO is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. Methods: Europium oxide (Eu2O3 doped ZnO films are prepared on quartz substrate using radio frequency (RF magnetron sputtering with doping concentrations 0, 0.5, 1, 3 and 5 wt%. The films are annealed in air at a temperature of 773 K for 2 hours. The annealed films are characterized using X-ray diffraction (XRD, micro-Raman spectroscopy, atomic force microscopy, ultraviolet (UV-visible spectroscopy and photoluminescence (PL spectroscopy. Results: XRD patterns show that the films are highly c-axis oriented exhibiting hexagonalwurtzite structure of ZnO. Particle size calculations using Debye-Scherrer formula show that average crystalline size is in the range 15–22 nm showing the nanostructured nature of the films. The observation of low- and high-frequency E2 modes in the Raman spectra supports the hexagonal wurtzite structure of ZnO in the films. The surface morphology of the Eu2O3 doped films presents dense distribution of grains. The films show good transparency in the visible region. The band gaps of the films are evaluated using Tauc plot model. Optical constants such as refractive index, dielectric constant, loss factor, and so on are calculated using the transmittance data. The PL spectra show both UV and visible emissions. Conclusion: Highly textured, transparent, luminescent Eu2O3 doped ZnO films have been synthesized using RF magnetron sputtering. The good optical and structural properties and intense luminescence in the ultraviolet and visible regions from the films suggest their suitability for optoelectronic applications.

  15. High-quality CdTe films from nanoparticle precursors

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  16. Development of plasma assisted thermal vapor deposition technique for high-quality thin film

    Science.gov (United States)

    Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

    2016-12-01

    The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10-3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance 75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

  17. High proton conductivity in the molecular interlayer of a polymer nanosheet multilayer film.

    Science.gov (United States)

    Sato, Takuma; Hayasaka, Yuta; Mitsuishi, Masaya; Miyashita, Tokuji; Nagano, Shusaku; Matsui, Jun

    2015-05-12

    High proton conductivity was achieved in a polymer multilayer film with a well-defined two-dimensional lamella structure. The multilayer film was prepared by deposition of poly(N-dodecylacryamide-co-acrylic acid) (p(DDA/AA)) monolayers onto a solid substrate using the Langmuir-Blodgett technique. Grazing-angle incidence X-ray diffraction measurement of a 30-layer film of p(DDA/AA) showed strong diffraction peaks in the out-of-plane direction at 2θ = 2.26° and 4.50°, revealing that the multilayer film had a highly uniform layered structure with a monolayer thickness of 2.0 nm. The proton conductivity of the p(DDA/AA) multilayer film parallel to the layer plane direction was 0.051 S/cm at 60 °C and 98% relative humidity with a low activation energy of 0.35 eV, which is comparable to perfluorosulfonic acid membranes. The high conductivity and low activation energy resulted from the formation of uniform two-dimensional proton-conductive nanochannels in the hydrophilic regions of the multilayer film. The proton conductivity of the multilayer film perpendicular to the layer plane was determined to be 2.1 × 10(-13) S/cm. Therefore, the multilayer film showed large anisotropic conductivity with an anisotropic ratio of 2.4 × 10(11).

  18. Directed Self-Assembly of Block Copolymers for High Breakdown Strength Polymer Film Capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Samant, Saumil P.; Grabowski, Christopher A.; Kisslinger, Kim; Yager, Kevin G.; Yuan, Guangcui; Satija, Sushil K.; Durstock, Michael F.; Raghavan, Dharmaraj; Karim, Alamgir

    2016-03-04

    Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (EBD) and dielectric permittivity (εr) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher EBD over that of component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS-b-PMMA system show ~50% enhancement in EBD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in EBD is attributed to the “barrier effect”, where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in EBD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. This approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.

  19. Graphene as tunable contact for high performance thin film transistor

    Science.gov (United States)

    Liu, Yuan

    Graphene has been one of the most extensively studied materials due to its unique band structure, the linear dispersion at the K point. It gives rise to novel phenomena, such as the anomalous quantum Hall effect, and has opened up a new category of "Fermi-Dirac" physics. Graphene has also attracted enormous attention for future electronics because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. However, graphene has zero intrinsic band gap, thus can not be used as the active channel material for logic transistors with sufficient on/off current ratio. Previous approaches to address this challenge include the induction of a transport gap in graphene nanostructures or bilayer graphene. However, these approaches have proved successful in improving the on-- off ratio of the resulting devices, but often at a severe sacrifice of the deliverable current density. Alternatively, with a finite density of states, tunable work-function and optical transparency, graphene can function as a unique tunable contact material to create a new structure of electronic devices. In this thesis, I will present my effort toward on-off ratio of graphene based vertical thin film transistor. I will include the work form four of my first author publication. I will first present my research studies on the a dramatic enhancement of the overall quantum efficiency and spectral selectivity of graphene photodetector, by coupling with plasmonic nanostructures. It is observed that metallic plasmonic nanostructures can be integrated with graphene photodetectors to greatly enhance the photocurrent and external quantum efficiency by up to 1,500%. Plasmonic nanostructures of variable resonance frequencies selectively amplify the photoresponse of graphene to light of different wavelengths, enabling highly specific detection of multicolours. Then I will show a new design of highly flexible vertical TFTs (VTFTs) with superior electrical

  20. High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

    OpenAIRE

    Tony Varghese; Courtney Hollar; Joseph Richardson; Nicholas Kempf; Chao Han; Pasindu Gamarachchi; David Estrada; Mehta, Rutvik J.; Yanliang Zhang

    2016-01-01

    Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride base...

  1. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  2. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  3. Depth profile study on Raman spectra of high-energy-electron-irradiated hydrogenated amorphous silicon films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    According to the different penetration depths for the incident lights of 472 nm and 532 nm in hydrogenated amorphous silicon (a-Si:H) thin films, the depth profile study on Raman spectra of a-Si:H films was carried out. The network ordering evolution in the near surface and interior region of the unirradiated and irradiated a-Si:H films was investigated. The results show that there is a structural improvement in the shortand intermediate-range order towards the surface of the unirradiated a-Si:H films. The amorphous silicon network in the near and interior region becomes more disordered on the shortand intermediate-range scales after being irradiated with high energy electrons. However, the surface of the irradiated films becomes more disordered in comparison with their interior region, indicating that the created defects caused by electron irradiation are concentrated in the near surface of the irradiated films. Annealing eliminates the irradiation effects on a-Si:H thin films and the structural order of the irradiated films is similar to that of the unirradiated ones after being annealed. There exists a structural improvement in the shortand intermediate-range order towards the surface of the irradiated a-Si:H films after being annealed.

  4. Facile synthesis of cobalt-doped zinc oxide thin films for highly efficient visible light photocatalysts

    Science.gov (United States)

    Altintas Yildirim, Ozlem; Arslan, Hanife; Sönmezoǧlu, Savaş

    2016-12-01

    Cobalt-doped zinc oxide (Co:ZnO) thin films with dopant contents ranging from 0 to 5 at.% were prepared using the sol-gel method, and their structural, morphological, optical, and photocatalytic properties were characterized. The effect of the dopant content on the photocatalytic properties of the films was investigated by examining the degradation behavior of methylene blue (MB) under visible light irradiation, and a detailed investigation of their photocatalytic activities was performed by determining the apparent quantum yields (AQYs). Co2+ ions were observed to be substitutionally incorporated into Zn2+ sites in the ZnO crystal, leading to lattice parameter constriction and band gap narrowing due to the photoinduced carriers produced under the visible light irradiation. Thus, the light absorption range of the Co:ZnO films was improved compared with that of the undoped ZnO film, and the Co:ZnO films exhibited highly efficient photocatalytic activity (∼92% decomposition of MB after 60-min visible light irradiation for the 3 at.% Co:ZnO film). The AQYs of the Co:ZnO films were greatly enhanced under visible light irradiation compared with that of the undoped ZnO thin film, demonstrating the effect of the Co doping level on the photocatalytic activity of the films.

  5. Apple peel-based edible film development using a high-pressure homogenization.

    Science.gov (United States)

    Sablani, Shyam S; Dasse, Florian; Bastarrachea, Luis; Dhawan, Sumeet; Hendrix, Kathleen M; Min, Sea C

    2009-09-01

    Biopolymer films were developed from apple peels of apple process co-products and their physical properties were determined. Apple peel-based films with glycerol (23%, 33%, and 44%[w/w, dry basis]) were prepared using high-pressure homogenization (HPH) at different levels of pressure (138, 172, and 207 MPa). An evaluation of the rheological properties (elastic modulus [G'], viscous modulus [G''], and viscosity) of the film-forming solutions was performed. For the apple peel films, the water sorption isotherms, the kinetics of water absorption, the water vapor permeability (WVP), the oxygen permeability (OP), and the tensile properties were determined. The G' and viscosity of the film-forming solutions decreased significantly with increasing processing pressure (P 0.05). The viscosity decreased from 644 to 468 kPa.s as the pressure increased from 138 to 207 MPa at 90 degrees C. The monolayer water content of the apple peel films decreased with increasing content of glycerol from 23% to 33%. Further increase in glycerol content did not change the monolayer water content. The water diffusion coefficient of the films was highest at the intermediate level of glycerol content. The barrier properties (WVP and OP) of the films increased with increasing level of glycerol, while processing pressure did not influence the gas barrier properties. The films prepared at 207 MPa were less stiff and strong, but more stretchable than those prepared at 138 and 172 MPa.

  6. Induced growth of high quality ZnO thin films by crystallized amorphous ZnO

    Institute of Scientific and Technical Information of China (English)

    Wang Zhi-Jun; Song Li-Jun; Li Shou-Chun; Lu You-Ming; Tian Yun-Xia; Liu Jia-Yi; Wang Lian-Yuan

    2006-01-01

    This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.

  7. Misfit dislocations and phase transformations in high-T sub c superconducting films

    CERN Document Server

    Gutkin, M Y

    2002-01-01

    A theoretical model is suggested that describes the effects of misfit stresses on defect structures, phase content and critical transition temperature T sub c in high-T sub c superconducting films. The focus is placed on the exemplary case of YBaCuO films deposited onto LaSrAlO sub 4 substrates. It is theoretically revealed here that misfit stresses are capable of inducing phase transformations controlled by the generation of misfit dislocations in growing cuprate films. These transformations, in the framework of the suggested model, account for experimental data on the influence of the film thickness on phase content and critical temperature T sub c of superconducting cuprate films, reported in the literature. The potential role of stress-assisted phase transformations in suppression of critical current density across grain boundaries in high-T sub c superconductors is briefly discussed.

  8. New Methods for Thin Film Deposition and First Investigations of the use of High Temperature Superconductors for Thin Film Cavities

    CERN Document Server

    Gustafsson, Anna; Vollenberg, Wilhelmus; Seviour, Rebecca

    2010-01-01

    Niobium thin film cavities have shown good and reliable performance for LEP and LHC, although there are limitations to overcome if this technique should be used for new accelerators such as the ILC. New coating techniques like High Power Impulse Magnetron Sputtering (HiPIMS) has shown very promising results and we will report on its possible improvements for Nb thin film cavity performance. Current materials used in accelerator Superconducting Radio Frequency (SRF) technologies operate at temperatures below 4 K, which require complex cryogenic systems. Researchers have investigated the use of High Temperature Superconductors (HTS) to form RF cavities, with limited success. We propose a new approach to achieve a high-temperature SRF cavity based on the superconducting ’proximity effect’. The superconducting proximity effect is the effect through which a superconducting material in close proximity to a non-superconducting material induces a superconducting condensate in the latter. Using this effect we hope...

  9. High Energy Density and High Temperature Multilayer Capacitor Films for Electric Vehicle Applications

    Science.gov (United States)

    Treufeld, Imre; Song, Michelle; Zhu, Lei; Baer, Eric; Snyder, Joe; Langhe, Deepak

    2015-03-01

    Multilayer films (MLFs) with high energy density and high temperature capability (>120 °C) have been developed at Case Western Reserve University. Such films offer a potential solution for electric car DC-link capacitors, where high ripple currents and high temperature tolerance are required. The current state-of-the-art capacitors used in electric cars for converting DC to AC use biaxially oriented polypropylene (BOPP), which can only operate at temperatures up to 85 °C requiring an external cooling system. The polycarbonate (PC)/poly(vinylidene fluoride) (PVDF) MLFs have a higher permittivity compared to that of BOPP (2.3), leading to higher energy density. They have good mechanical stability and reasonably low dielectric losses at 120 °C. Nonetheless, our preliminary dielectric measurements show that the MLFs exhibit appreciable dielectric losses (20%) at 120 °C, which would, despite all the other advantages, make them not suitable for practical applications. Our preliminary data showed that dielectric losses of the MLFs at 120 °C up to 400 MV/m and 1000 Hz originate mostly from impurity ionic conduction. This work is supported by the NSF PFI/BIC Program (IIP-1237708).

  10. High quality antireflective ZnS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tec-Yam, S.; Rojas, J.; Rejon, V. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico); Oliva, A.I., E-mail: oliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Merida, Departamento de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso, AP 73-Cordemex, 97310 Merida Yucatan (Mexico)

    2012-10-15

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl{sub 2}, NH{sub 4}NO{sub 3}, and CS(NH{sub 2}){sub 2} were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 Degree-Sign C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300-800 nm wavelength range, and a reflectance below 25% in the UV-Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: Black-Right-Pointing-Pointer High quality ZnS thin films were prepared by chemical bath deposition (CBD). Black-Right-Pointing-Pointer Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. Black-Right-Pointing-Pointer Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  11. Mod 1 ICS TI Report: ICS Conversion of a 140% HPGe Detector

    Energy Technology Data Exchange (ETDEWEB)

    Bounds, John Alan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-07-05

    This report evaluates the Mod 1 ICS, an electrically cooled 140% HPGe detector. It is a custom version of the ORTEC Integrated Cooling System (ICS) modified to make it more practical for us to use in the field. Performance and operating characteristics of the Mod 1 ICS are documented, noting both pros and cons. The Mod 1 ICS is deemed a success. Recommendations for a Mod 2 ICS, a true field prototype, are provided.

  12. Functionalized Nano-Film Microchannel Plate: A Single High Aspect Ratio Device for High Resolution, Low Noise Astronomical Imaging Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Atomic layer deposited functional nano-film technology is used to manufacture Microchannel plate (MCP) devices capable of high gain / low ion feedback operation, on...

  13. CO observation of SNR IC 443

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    We present our 12CO and 13CO mapping observations of SNR IC 443 interacting with molecular clouds.It is the first largescale high-resolution 13CO mapping observation in the surrounding region.The morphologies of IC 443 in 12CO and 13 CO are compared with the optical,infrared,Spitzer far-infrared,X-ray,and neutral atomic gas(HI).We also make comparison and analysis in the kinematics,using the date-cubes of 12CO,13CO and HI,to help distinguish the complicated gas motions in the shocked regions.Based on the work of Wang & Scoville(1992),we present a new model to explain the coexistence of multiple shocks with different speeds in a pc-scale region at the central clump B.We test this new model by analyzing the HI and CO distribution in both velocity and space domain.We also establish the relationship between the dissociation rate of shocked molecular gas and the shock velocity in this region.Finally,we derive the optical depth of 12CO with the 13CO spectra in clump B,and discuss the validity of the assumption of optically thin emission for the shocked 12CO.

  14. Studying Radiation Tolerant ICs for LHC

    CERN Multimedia

    Faccio, F; Snoeys, W; Campbell, M; Casas-cubillos, J; Gomes, P

    2002-01-01

    %title\\\\ \\\\In the recent years, intensive work has been carried out on the development of custom ICs for the readout electronics for LHC experiments. As far as radiation hardness is concerned, attention has been focussed on high total dose applications, mainly for the tracker systems. The dose foreseen in this inner region is estimated to be higher than 1~Mrad/year. In the framework of R&D projects (RD-9 and RD-20) and in the ATLAS and CMS experiments, the study of different radiation hard processes has been pursued and good contacts with the manufacturers have been established. The results of these studies have been discussed during the Microelectronics User Group (MUG) rad-hard meetings, and now some HEP groups are working to develop radiation hard ICs for the LHC experiments on some of the available rad-hard processes.\\\\ \\\\In addition, a lot of the standard commercial electronic components and ASICs which are planned to be installed near the LHC machine and in the detectors will receive total doses in ...

  15. Retardation the dewetting dynamics of ultrathin polystyrene films using highly branched aromatic molecules as additives

    Energy Technology Data Exchange (ETDEWEB)

    Pangpaiboon, Nampueng [Research Unit of Advanced Ceramics, Department of Materials Science, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Traiphol, Nisanart, E-mail: Nisanart.T@chula.ac.th [Research Unit of Advanced Ceramics, Department of Materials Science, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Promarak, Vinich [School of Chemistry and Center of Excellence for Innovation in Chemistry, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Traiphol, Rakchart, E-mail: Rakchartt@nu.ac.th [Laboratory of Advanced Polymers and Nanomaterials, Department of Chemistry and Center of Excellence for Innovation in Chemistry, Faculty of Science, Naresuan University, Phitsanulok 65000 (Thailand); NANOTEC-MU Excellence Center on Intelligent Materials and Systems, Faculty of Science, Rama 6 Road, Ratchathewi, Bangkok 10400 (Thailand)

    2013-12-02

    This study introduces a new class of materials as a dewetting inhibitor for polystyrene (PS) ultrathin films. Two types of highly branched aromatic (HBA) molecules are added into PS films with thicknesses of 7 nm and 23 nm. Their concentrations range from 0.75 to 5 wt.%. The films are annealed in vacuum oven at elevated temperatures to accelerate dewetting process. Evolution of the film morphologies is followed by utilizing atomic force microscopy and optical microscopy. Contact angle measurements are used to evaluate interfacial interactions in each system. Dewetting area as a function of annealing time and HBA concentration are calculated. We have found that the presence of only 0.5 wt.% HBA can suppress the dewetting dynamics of PS films. Increasing the HBA concentration from 0.5 to 5 wt.% causes systematic decrease of the dewetting rate. In this system, the HBA molecules behave as physical cross-linking points for PS chains, which lead to the improvement of film stability. The efficiency of HBA as a dewetting inhibitor varies with molecular weight of PS while the change of HBA structure hardly affects the dewetting behaviors. - Highlights: • New method for improving stability of polystyrene (PS) thin filmsHighly branched aromatic molecules (HBA) are used to suppress the dewetting. • Thermal stability of blended PS/HBA films greatly improves. • The effectiveness of HBA varies with molecular weight of PS. • Important results for designing materials in coating application.

  16. Sputter deposition of ZnO thin films at high substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kronenberger, Achim; Eisermann, Sebastian; Laufer, Andreas; Graubner, Swen; Polity, Angelika; Meyer, Bruno K. [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen (Germany)

    2008-07-01

    For the use of sputter deposited ZnO thin films in semiconductor devices, not only the electrical behaviour but also to maintain high crystal quality of the deposited films is important. Pure ZnO thin films have been prepared on quartz glass and sapphire substrates by radio-frequency (RF) sputtering using a ceramic ZnO target. The substrate-temperature during the deposition could be adjusted from RT up to 735 C. Argon was used as sputter-gas and oxygen as reactive-gas to change the stoichiometry of the deposited thin films. The crystallinity of the deposited films has been analysed by XRD measurements. For optical and electrical characterisation optical transmission and Hall-effect measurements have been performed. To investigate impurities the films have been analysed by EDX and SIMS. The focus was set on the electrical and optical properties of the deposited ZnO thin films and their changing behaviour in the cause of the different deposition parameters such as gas pressures, substrate temperature and rf-power. The aim was to gain control over changing the resistivity in a wide range, while keeping the films transparent in the visible region of the electromagnetic spectra and simultaneous maintain a high crystal quality.

  17. Composite Films from Sodium Alginate and High Methoxyl Pectin - Physicochemical Properties and Biodegradation in Soil

    Directory of Open Access Journals (Sweden)

    Ayten O. Solak

    2014-12-01

    Full Text Available The increased public attention on the waste pollution and the awareness of the hard environmental problems is the reason for the need of new materials which are susceptible to degradation in nature for a short period of time. The biopolymer films and coatings based on renewable natural sources are suitable for obtaining of biodegradable packaging. The newly developed composite films based on sodium alginate and apple high methoxyl pectin were studied for total soluble matter, swelling in water, water vapors transmission rate and biodegradation in soil. The analysis of their behavior in water medium showed a considerably higher rate and degree of dissolution of the pectin monocomponent film compared to the composite and alginate films. The composite alginate-pectin films showed lower water vapors transmission rate even under extreme conditions (38ºC, RH 90 % compared to the monocomponent films. All investigated films degraded in soil up to 80 days. The good barrier properties to water vapors and the complete biodegradation in soil make the films based on sodium alginate and high methoxyl pectin potential ecological materials for packing and coating of foods and pharmaceutical products.

  18. High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Su Min; Garay, Adrian Adalberto; Lee, Wan In; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH{sub 3}OH/Ar gas mixture. As the CH{sub 3}OH concentration in CH{sub 3}OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH{sub 3}OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO{sub 2} and RuO{sub 3} compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction. - Highlights: • Etching of Ru films in CH{sub 3}OH/Ar was investigated. • High selectivity and etch profile with high degree of anisotropy were obtained. • XPS analysis was examined to identify the etch chemistry. • During etching Ru was oxidized to RuO{sub 2} and RuO{sub 3} can be easily sputtered off.

  19. High-Quality ZrO2 Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation

    Institute of Scientific and Technical Information of China (English)

    章宁琳; 万青; 宋志棠; 沈勤我; 祝向荣; 林成鲁

    2002-01-01

    Zirconium oxide films were deposited on p-type Si(l00) substrates using high vacuum electron beam evaporation (HVEBE) at room temperature. X-ray photoelectric spectroscopy shows that the dominant chemical state of zirconia thin films is in the fully oxidized state of Zr4+, no matter whether annealed in oxygen. The structural information from x-ray diffraction shows that zirconia thin films deposited at room temperature by HVEBEwere completely amorphous before and after the annealing. The spreading resistance profile indicates that ZrO2 thin films have excellent insulation property (with a resistance of more than 10s Ω) and the thickness is 800A.After thermal treatment at 600°C in O2 ambient, the root-mean-square roughness changed from 8.09 A of the as-deposited film to 13.8A across an area of i × 1μm2.

  20. High electron mobility ZnO film for high-performance inverted polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Peiwen; Chen, Shan-Ci; Zheng, Qingdong; Huang, Feng, E-mail: fhuang@fjirsm.ac.cn; Ding, Kai [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou Fujian, 350002 (China)

    2015-04-20

    High-quality ZnO films (ZnO-MS) are prepared via magnetron sputtering deposition with a high mobility of about 2 cm{sup 2}/(V·s) and are used as electron transport layer for inverted polymer solar cells (PSCs) with polymer poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b′] dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]:[6,6]-phenyl C71-butyric acid methyl ester as the active layer. A significant improvement of J{sub SC}, about 20% enhancement in contrast to the devices built on sol-gel derived ZnO film (ZnO-Sol), is found in the ZnO-MS based device. High performance ZnO-MS based PSCs exhibit power conversion efficiency (PCE) up to 8.55%, which is much better than the device based on ZnO-Sol (PCE = 7.78%). Further research on cathode materials is promising to achieve higher performance.

  1. Preparation of nanostructured tungsten trioxide thin films by high pressure sublimation and condensation

    Energy Technology Data Exchange (ETDEWEB)

    Abdel Samad, B., E-mail: bassel.abdel.samad@umoncton.ca; Thibodeau, J.; Ashrit, P.V.

    2015-09-30

    Highlights: • A new technique combines the high pressure sublimation and condensation with the variation of source–substrate distance to control the thin film nanostructure. • The nanostructure of WO{sub 3} thin films is systematically controlled in terms of the grain size and porosity. • The dependence of nanostructure, roughness, grain size, porosity and index of refraction to the source–substrate distance is studied. • The potential tailoring of the film properties for solar energy applications through the precise control of film nanostructure is suggested. - Abstract: Thin films of tungsten trioxide (WO{sub 3}) have gained increasing importance due to their interesting chromogenic properties and for their high application potential in electrochromic devices. It is very well known that their electrochromic switching properties depend very sensitively on their nanostructure. Hence, a vast majority of the research work carried out in this domain at present is dedicated to the various techniques of controlled inducing of a nanostructure in these WO{sub 3} thin films in order to enhance their electrochromic performance. In the present work we have carried out a systematic study of the nanostructured WO{sub 3} thin films by using a novel technique of varying the source–substrate distance in a high pressure sublimation and condensation method. This technique has been found to be very efficient in controlling the grain size and thus the nanostructure of the deposited films. A correlation is established between the optical and electrochromic properties of the WO{sub 3} films and the induced nanostructure. The electrochromic properties are studied by a dry lithiation process developed in our laboratory. The results indicate a strong dependence of the film nanostructure on the source–substrate distance which influences quite sensitively the electrochromic properties. These results are expected to help design electrochromic devices suitable for different

  2. High-performance PMN-PT thick films.

    Science.gov (United States)

    Kosec, Marija; Ursic, Hana; Holc, Janez; Hrovat, Marko; Kuscer, Danjela; Malic, Barbara

    2010-10-01

    This article describes some of our work on ₀.₆₅Pb(Mg₁/₃Nb(₂/₃)O₃-₀.₃₅PbTiO₃ (0.65PMN-0.35PT) thick films printed on alumina substrates. These thick films, with the nominal composition ₀.₆₅Pb(Mg₁/₃Nb(₂/₃)O₃-₀.₃₅PbTiO₃, were produced by screen-printing and firing a paste prepared from an organic vehicle and pre-reacted fine particles of avery chemically homogeneous powder. To improve the adhesion of the 0.65PMN-0.35PT to the platinized alumina substrate,a Pb(Zr₀.₅₃Ti₀.₄₇)O₃ layer was deposited between the electrode and the substrate. The samples were then sintered at 950 °C for 2 h with various amounts of packing powder on the alumina (Al₂O₃) substrates. The sintering procedure was optimized to obtain dense 0.65PMN-0.35PT films. The films were then characterized using scanning electron microscopy as well as measurements of the dielectric and piezoelectric constants.The electrostrictive behavior of the 0.65PMN-0.35PT thick films was investigated using an atomic force microscope(AFM). Finally, substrate-free, large-displacement bending type actuators were prepared and characterized, and the normalized displacement (i.e., the displacement per unit length) of the actuators was determined to be 55 μm/cm at 3.6 kV/cm.

  3. Preparation and Microstructure of Highly - Oriented LaNiO3 Thin Films by RF Sputtering Method

    Institute of Scientific and Technical Information of China (English)

    CHENG Xing-hua; QIAO Liang; BI Xiao-fang

    2006-01-01

    In an attempt of being used as buffer layers and electrodes for the textured BaTiO3 (BTO) ferroelectric thin films, highly (100)-oriented LaNiO3 (LNO) thin films of different thicknesses were deposited directly on Si (100) substrate with radio-frequency (RF) magnetron sputtering method. It is observed that the substrate temperatures and the film thicknesses bring main influences on the microstructures and orientation of the thin film. The effects of the thicknesses and substrate temperatures on the orientation of the films were studied on the LNO films of different thicknesses. The highly (100)-oriented LNO thin films were obtained at the substrate temperature of 600 ℃. The existence of epitaxially grown BTO films indicates that the oriented LNO thin films obtained in this work could be used as a buffer layer for epitaxial growth.

  4. Polarity enhancement in high oriented ZnO films on Si (100) substrate

    Science.gov (United States)

    Kurniawan, Robi; Nurfani, Eka; Muhammady, Shibghatullah; Sutjahja, Inge M.; Winata, Toto; Rusydi, Andrivo; Darma, Yudi

    2016-04-01

    Zinc oxide films with hexagonal crystal structures have been grown on Si substrate (100) using the DC-unbalanced magnetron sputtering at temperature of 300°C with growth time variation. The films have been characterized using X-Ray Diffraction and Fourier Transform Infrared measurement to show the crystal parameter and atomic bonding. The results show that the films have a dominant orientation in the hkl plane (002), while peak positions are shift to lower diffraction angle with addition of growth time. In addition, the bonding between Zn and O atoms (Zn-O) tend to be weaker as indicated by transmittance peak shifting to lower energy. The weakening of Zn-O bonding is due to the contribution of addition of bond length. These conditions make the films tend to have a high polarity. Further analysis of these studies will bring us to have a good undestanding to explain the ferroelectric properties of the ZnO films.

  5. KNN/BNT Composite Lead-Free Films for High-Frequency Ultrasonic Transducer Applications

    Science.gov (United States)

    Lau, Sien Ting; Ji, Hong Fen; Li, Xiang; Ren, Wei; Zhou, Qifa; Shung, K. Kirk

    2011-01-01

    Lead-free K0.5Na0.5NbO3/Bi0.5Na0.5TiO3 (KNN/BNT) films have been fabricated by a composite sol-gel technique. Crystalline KNN fine powder was dispersed in the BNT precursor solution to form a composite slurry which was then spin-coated onto a platinum-buffered Si substrate. Repeated layering and vacuum infiltration were applied to produce 5-μm-thick dense composite film. By optimizing the sintering temperature, the films exhibited good dielectric and ferroelectric properties comparable to PZT films. A 193-MHz high-frequency ultrasonic transducer fabricated from this composite film showed a −6-dB bandwidth of approximately 34%. A tungsten wire phantom was imaged to demonstrate the capability of the transducer. PMID:21244994

  6. Formation of thin films of organic-inorganic perovskites for high-efficiency solar cells.

    Science.gov (United States)

    Stranks, Samuel D; Nayak, Pabitra K; Zhang, Wei; Stergiopoulos, Thomas; Snaith, Henry J

    2015-03-09

    Organic-inorganic perovskites are currently one of the hottest topics in photovoltaic (PV) research, with power conversion efficiencies (PCEs) of cells on a laboratory scale already competing with those of established thin-film PV technologies. Most enhancements have been achieved by improving the quality of the perovskite films, suggesting that the optimization of film formation and crystallization is of paramount importance for further advances. Here, we review the various techniques for film formation and the role of the solvents and precursors in the processes. We address the role chloride ions play in film formation of mixed-halide perovskites, which is an outstanding question in the field. We highlight the material properties that are essential for high-efficiency operation of solar cells, and identify how further improved morphologies might be achieved.

  7. Hydrothermal growth of VO2 nanoplate thermochromic films on glass with high visible transmittance

    Science.gov (United States)

    Zhang, Jiasong; Li, Jingbo; Chen, Pengwan; Rehman, Fida; Jiang, Yijie; Cao, Maosheng; Zhao, Yongjie; Jin, Haibo

    2016-06-01

    The preparation of thermochromic vanadium dioxide (VO2) films in an economical way is of interest to realizing the application of smart windows. Here, we reported a successful preparation of self-assembly VO2 nanoplate films on TiO2-buffered glass by a facile hydrothermal process. The VO2 films composed of triangle-shaped plates standing on substrates exhibit a self-generated porous structure, which favors the transmission of solar light. The porosity of films is easily controlled by changing the concentration of precursor solutions. Excellent thermochromic properties are observed with visible light transmittance as high as 70.3% and solar modulating efficiency up to 9.3% in a VO2 film with porosity of ~35.9%. This work demonstrates a promising technique to promote the commercial utilization of VO2 in smart windows.

  8. Ultra-sensitive Absorption Diagnostics of Thin Films for High-power Laser Interference Coatings

    Science.gov (United States)

    2015-01-05

    Absorption Diagnostics of Thin Films for High-power Laser Interference Coatings REPORT DOCUMENTATION PAGE Form Approved OMB No. 0704-0188 Public...Absorption Diagnostics of Thin Films for High-power Laser Interference Coatings FA9550-13-1-0201 Jorge J. Rocca (PI) Oscar E. Martinez Carmen S...work consists of the development of a prototype suitable for incorporation into the deposition chamber. Such powerful diagnostics does not

  9. Preparation and characterization of highly photosensitive ZnO thin films

    Science.gov (United States)

    Jiménez González, Antonio E.; Nair, P. K.

    1996-07-01

    Highly photosensitive ZnO films were prepared by the chemical technique Successive Ion Layer Adsorption and Reaction (SILAR). The films posses high optical transmittance (>90%) in the VIS and IR ranges. The cristallinity, orientation of the crystallites and surface morphology undergo changes with annealing. The optical transmittance and reflectance measurements indicated changes in the position of the optical absorption edge: shifting from 353 nm to 366 nm when annealed at 450 °C for 2 hours. The films are highly photosensitive, offering photocurrent to dark current ratio of 105, in as prepared films under 900 Wm-2 illumination from a solar simulator. Annealing in oxygen, hydrogen and vacuum improved the dark conductivity and the photoconductivity of the films. This effect is related to the modification of the defect statistics of the films and involves cation interstitials and anion vacancies. The studies indicate that the ZnO films prepared by the SILAR process may be used, with appropriated postdeposition treatments, for specific applications.

  10. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    Science.gov (United States)

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  11. Pulsed-laser deposition of vicinal and c-axis oriented high temperature superconducting thin films

    CERN Document Server

    Rössler, R

    2000-01-01

    respect to the temperature, oxygen pressure and laser fluence. (Re,Hg)Ba sub 2 Ca sub ( n-1)Cu sub n O sub x films are synthesized on (001) and vicinal SrTiO sub 3 substrates in a two step process employing pulsed-laser deposition of Hg-free precursor films and Hg-vapour annealing in a sealed quartz tube. The sealed quartz tube technique is described in detail and the thermodynamics and the phase formation are discussed. The influence of the Hg-vapour pressure and the annealing temperature on the film properties are investigated. The influence of Hg-vapour annealing on Bi sub 2 Sr sub 2 CaCu sub 2 O sub x films is described. YBa sub 2 Cu sub 3 O sub x films with thicknesses 20 to 480 nm are deposited on vicinal SrTiO sub 3 substrates (10 degrees tilt angle). Variation of the resistivities and changes in the film morphology depending on film thickness are described. The influence of post-annealing treatments on the film properties is discussed. Pulsed-laser deposition (PLD) of high temperature superconducting ...

  12. High Coercivity Sr-ferrite Magnetic Thin Films Induced by Various Underlayers

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Three kinds of oxide underlayers, namely SiO2, ZnO and Al2O3, were deposited prior to the sputtering of Sr-ferrite films, respectively, in order to induce the optimum grain morphology and the texture of the films. A Sr-ferrite film with an easy axis in-plane orientation was induced by SiO2 underlayer. In contrast, it prefers to be perpendicular to film plane for the cases of ZnO and Al2O3 underlayers. The optimum magnetic properties of the former film along film plane are: 4πMr=1.7 kG, iHc=5.35 kOe, and Sq=0.59, which are mainly dominated by the exchange coupling effect, determined by Wohlfarth's remanence analysis, among grains. While those for the films with an easy axis perpendicular to film plane can be as high as 4πMr=3.72 kG, iHc=6.42 kOe, and Sq=0.82, which are mainly dominated by the magnetostatic interaction among grains.

  13. High-frequency magnetic characteristics of Fe-Co-based nanocrystalline alloy films

    Institute of Scientific and Technical Information of China (English)

    HIHARA; Takehiko; SUMIYAMA; Kenji

    2010-01-01

    Magnetically soft Fe-Co-based nanocrystalline alloy films were produced by two preparation methods:One using a new energetic cluster deposition technique and another using a conventional magnetron sputtering technique.Their structural,static magnetic properties and high-frequency magnetic characteristics were investigated.In the energetic cluster deposition method,by applying a high-bias voltage to a substrate,positively charged clusters in a cluster beam were accelerated electrically and deposited onto a negatively biased substrate together with neutral clusters from the same cluster source,to form a high-density Fe-Co alloy cluster-assembled film with good high-frequency magnetic characteristics.In the conventional magnetron sputtering method,only by rotating substrate holder and without applying a static inducing magnetic field on the substrates,we produced Fe-Co-based nanocrystalline alloy films with a remarkable in-plane uniaxial magnetic anisotropy and a good soft magnetic property.The obtained Fe-Co-O,Fe-Co-Ti-N,and Fe-Co-Cr-N films all revealed a high real permeability exceeding 500 at a frequency up to 1.2 GHz.This makes Fe-Co-based nanocrystalline alloy films potential candidates as soft magnetic thin film materials for the high-frequency applications.

  14. Wafer level 3-D ICs process technology

    CERN Document Server

    Tan, Chuan Seng; Reif, L Rafael

    2009-01-01

    This book focuses on foundry-based process technology that enables the fabrication of 3-D ICs. The core of the book discusses the technology platform for pre-packaging wafer lever 3-D ICs. However, this book does not include a detailed discussion of 3-D ICs design and 3-D packaging. This is an edited book based on chapters contributed by various experts in the field of wafer-level 3-D ICs process technology. They are from academia, research labs and industry.

  15. Newnes digital logic IC pocket book

    CERN Document Server

    MARSTON, R M

    1996-01-01

    This handy reference guide to modern '74'- series and '4000'- series digital ICs presents 620 useful and carefully selected circuits, diagrams, graphs and tables, supported by informative text and captions. Detailed descriptions of and practical applications information on more than 185 TTL and CMOS ICs are provided.This wealth of information is clearly and logically arranged so that specific information can be quickly and easily located. Fifteen chapters cover from IC basics and TTL and CMOS principles, to the practical circuitry of logic ICs, waveform generators and multiplexers.

  16. All 2D, high mobility, flexible, transparent thin film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Das, Saptarshi; Sumant, Anirudha V.; Roelofs, Andreas

    2017-01-17

    A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

  17. Growth of binary Ni–Fe films: Characterisations at low and high potential levels

    Energy Technology Data Exchange (ETDEWEB)

    Kuru, Hilal, E-mail: htopcu@balikesir.edu.tr [Physics Department, Science and Literature Faculty, Balikesir Universitesi, Fen Edebiyat Fakultesi, Fizik Bolumu, Cagis Yerleskesi, 10145 Balikesir (Turkey); Kockar, Hakan, E-mail: hkockar@balikesir.edu.tr [Physics Department, Science and Literature Faculty, Balikesir Universitesi, Fen Edebiyat Fakultesi, Fizik Bolumu, Cagis Yerleskesi, 10145 Balikesir (Turkey); Alper, Mursel, E-mail: malper@uludag.edu.tr [Physics Department, Science and Literature Faculty, Uludag Universitesi, Fen Edebiyat Fakultesi, Fizik Bolumu, Gorukle, 16059 Bursa (Turkey); Karaagac, Oznur, E-mail: karaagac@balikesir.edu.tr [Physics Department, Science and Literature Faculty, Balikesir Universitesi, Fen Edebiyat Fakultesi, Fizik Bolumu, Cagis Yerleskesi, 10145 Balikesir (Turkey)

    2015-03-01

    Binary Ni–Fe films relating their magnetoresistance and magnetic properties with crystal structure and surface morphology, and the corresponding film composition were investigated at low and high deposition potentials. Based on the results obtained from a cyclic voltammetry curve, a potential region between −1.3 V and −1.8 V was selected, and the current–time transients were recorded to control the proper film growth. The Ni–Fe films were potentiostatically electrodeposited on polycrystalline titanium substrates at low (−1.3 V) and high (−1.8 V) deposition potential. The data from the energy dispersive X-ray spectrometry and the inductively coupled plasma atomic emission spectroscopy demonstrated that the Ni and Fe content in the films varied as the potential changed. The magnetotransport properties and magnetic characteristics studied by a vibrating sample magnetometer (VSM) were observed to be affected by the deposition potentials. All films were also noted to exhibit anisotropic magnetoresistance behaviour. At low potential, the magnitude of the longitudinal magnetoresistance (LMR) was high (3.93%) and that of the transverse magnetoresistance (TMR) was low (3.49%) while for the film at high potential the LMR (2.76%) and the TMR (3.66%) magnitudes were obtained. Magnetization measurements by VSM revealed that the saturation magnetization, M{sub s} was 779 emu/cm{sup 3} and saturation field, H{sub s} was 142 Oe at low potential while for the films deposited at high potential the M{sub s} and H{sub s} were 749 emu/cm{sup 3} and 262 Oe, respectively. However, the coercivities in the films were found to be around 4.5 Oe, regardless of the potential. Also, the magnetic easy axis was found to be in the film plane for all samples. The structural analysis of the films was carried out using the X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. To XRD analysis, all films have a strong (111) texture of face-centred cubic structure and

  18. High efficiency thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Britt, J.; Chen, G.; Ferekides, C.; Schultz, N.; Wang, C.; Wu, C. Q.

    1992-12-01

    Cadmium sulfide (CdS), grown from an aqueous solution, and zinc oxide (ZnO), cadmium zinc sulfide (Cd1-xZnxS), and zinc selenide (ZnSe), deposited by metalorganic chemical vapor deposition (MOCVD), have been used as the window for thin film cadmium telluride (CdTe) solar cells. Thin film solar cells were prepared by the successive deposition of the window and p-CdTe (by MOCVD and close-spaced sublimation, CSS) on SnO2:F/glass substrates. CdS/CdTe(CSS) solar cells show considerably better characteristics than CdS/CdTe(MOCVD) solar cells because of the better microstructure of CSS CdTe films. Total area conversion efficiency of 14.6%, verified by the National Renewable Energy Laboratory, has been achieved for solar cells of about 1 cm2 area. Solar cell prepared by using ZnO, ZnSe, or Cd1-xZnxS as window have significantly lower photovoltage than CdS/CdTe solar cells.

  19. Spin Hall effects in mesoscopic Pt films with high resistivity

    Science.gov (United States)

    Qin, Chuan; Luo, Yongming; Zhou, Chao; Cai, Yunjiao; Jia, Mengwen; Chen, Shuhan; Wu, Yizheng; Ji, Yi

    2016-10-01

    The energy efficiency of the spin Hall effects (SHE) can be enhanced if the electrical conductivity is decreased without sacrificing the spin Hall conductivity. The resistivity of Pt films can be increased to 150-300 µΩ · cm by mesoscopic lateral confinement, thereby decreasing the conductivity. The SHE and inverse spin Hall effects (ISHE) in these mesoscopic Pt films are explored at 10 K by using the nonlocal spin injection/detection method. All relevant physical quantities are determined in situ on the same substrate, and a quantitative approach is developed to characterize all processes effectively. Extensive measurements with various Pt thickness values reveal an upper limit for the Pt spin diffusion length: {λ\\text{pt}}   ⩽  0.8 nm. The average product of {λ\\text{pt}} and the Pt spin Hall angle {α\\text{H}} is substantial: {α\\text{H}}{λ\\text{pt}}   =  (0.142  ±  0.040) nm for 4 nm thick Pt, though a gradual decrease is observed at larger Pt thickness. The results suggest enhanced spin Hall effects in resistive mesoscopic Pt films.

  20. High-order optical nonlinearities in nanocomposite films dispersed with semiconductor quantum dots at high concentrations

    Science.gov (United States)

    Tomita, Yasuo; Matsushima, Shun-suke; Yamagami, Ryu-ichi; Jinzenji, Taka-aki; Sakuma, Shohei; Liu, Xiangming; Izuishi, Takuya; Shen, Qing

    2017-06-01

    We describe the nonlinear optical properties of inorganic-organic nanocomposite films in which semiconductor CdSe quantum dots as high as 6.8 vol.% are dispersed. Open/closed Z-scan measurements, degenerate multi-wave mixing and femtosecond pump-probe/transient grating measurements are conducted. It is shown that the observed fifth-order optical nonlinearity has the cascaded third-order contribution that becomes prominent at high concentrations of CdSe QDs. It is also shown that there are picosecond-scale intensity-dependent and nanosecond-scale intensity-independent decay components in absorptive and refractive nonlinearities. The former is caused by the Auger process, while the latter comes from the electron-hole recombination process.

  1. Effect of high-pressure food processing on the physical properties of synthetic and biopolymer films.

    Science.gov (United States)

    Galotto, M J; Ulloa, P A; Guarda, A; Gavara, R; Miltz, J

    2009-08-01

    The effect of high-pressure processing on 2 plastic food packaging films, a biopolymer (PLASiOx/PLA) and a synthetic polymer (PET-AlOx), was studied. Samples in direct contact with olive oil, as a fatty food simulant, and distilled water, as an aqueous simulant, were subjected to a pressure of 500MPa for 15 min at 50 degrees C. The mechanical, thermal, and gas barrier properties of both films were evaluated after the high-pressure processing (HPP) and compared to control samples that have not undergone this treatment. Significant changes in all properties were observed in both films after the HPP treatment and in contact with the food simulants. In both films an induced crystallization was noticed. In the PLASiOx/PLA film the changes were larger when in contact with water that probably acted as a plasticizer. In the PET-AlOx film the changes in properties were attributed to the formation of pinholes and cracks during the HPP treatment. In this film, most of the properties changed more in the presence of oil as the food simulant.

  2. High performance of symmetrical supercapacitor based on multilayer films of graphene oxide/polypyrrole electrodes

    Energy Technology Data Exchange (ETDEWEB)

    De la Fuente Salas, Ixra Marisol [Department of Chemical Engineering, Technological Institute of La Laguna, Torreón, Coahuila (Mexico); Sudhakar, Y.N. [Department of Chemistry, Manipal Institute of Technology, Manipal, Karnataka (India); Selvakumar, M., E-mail: chemselva78@gmail.com [Department of Chemistry, Manipal Institute of Technology, Manipal, Karnataka (India)

    2014-03-01

    Graphical abstract: Schematic representation of synthesis of graphene oxide/PPy multilayer film. - Highlights: • Influence of current density, concentration of supporting electrolyte and conducting polymer deposition time on GO matrix are studied in detail. • High performance capacitive electrode for multilayer film of GO/PPy is compared with single layer GO/PPy film. • Morphology of the multilayer film and probable mechanism of multilayer deposition of PPy in GO are discussed. - Abstract: In this work we have deposited multlilayer films of polypyrrole (PPy) by galvanostatic method with three different dopants namely p-toluenesulphonic acid, benzene sulphonic acid, and sulfuric acid ions on graphene oxide (GO) layer. The better deposition of PPy films on GO is addressed by studying the influence of different electrolytes, concentrations and current densities. The multilayer films of GO/PPy exhibits greater capacitance compared to GO/PPy single layer. The morphology of the graphene oxide (GO)/multilayer nano PPy structures is carefully analyzed by scanning electron microscopy, FTIR and XPS spectrum. Specific capacitance of fabricated supercapacitor using multilayer electrodes is as high as 332 F g{sup −1} at 10 mV s{sup −1} and also compared with another supercapacitor made from single GO/PPy layer whose capacitance is 215 F g{sup −1}. Galvanostatic charge–discharge studies show good performance and stability.

  3. Facile synthesis of high strength hot-water wood extract films with oxygen-barrier performance

    Science.gov (United States)

    Chen, Ge-Gu; Fu, Gen-Que; Wang, Xiao-Jun; Gong, Xiao-Dong; Niu, Ya-Shuai; Peng, Feng; Yao, Chun-Li; Sun, Run-Cang

    2017-01-01

    Biobased nanocomposite films for food packaging with high mechanical strength and good oxygen-barrier performance were developed using a hot-water wood extract (HWE). In this work, a facile approach to produce HWE/montmorillonite (MMT) based nanocomposite films with excellent physical properties is described. The focus of this study was to determine the effects of the MMT content on the structure and mechanical properties of nanocomposites and the effects of carboxymethyl cellulose (CMC) on the physical properties of the HWE-MMT films. The experimental results suggested that the intercalation of HWE and CMC in montmorillonite could produce compact, robust films with a nacre-like structure and multifunctional characteristics. This results of this study showed that the mechanical properties of the film designated FCMC0.05 (91.5 MPa) were dramatically enhanced because the proportion of HWE, MMT and CMC was 1:1.5:0.05. In addition, the optimized films exhibited an oxygen permeability below 2.0 cm3 μm/day·m2·kPa, as well as good thermal stability due to the small amount of CMC. These results provide a comprehensive understanding for further development of high-performance nanocomposites which are based on natural polymers (HWE) and assembled layered clays (MMT). These films offer great potential in the field of sustainable packaging.

  4. Performance of high amylose starch-composited gelatin films influenced by gelatinization and concentration.

    Science.gov (United States)

    Wang, Wenhang; Wang, Kun; Xiao, Jingdong; Liu, Yaowei; Zhao, Yana; Liu, Anjun

    2017-01-01

    In order to study the impact of starch in film performance, high amylose corn starch was composited in gelatin films under different gelatinization conditions and, in high and low concentrations (10 and 50wt.%). It was found that hot water gelatinized starch (Gel-Shw) increased film mechanical strength and was dependent upon the starch concentration. The addition of an alkali component to the starch significantly enhanced the swelling of the starch granules and expedited the gelatinization process. Incorporation of starch, especially the alkalized starch (Sha), into the gelatin films decreased film solubility which improved its water resistance and water vapor permeability (WVP). Multiple techniques (DSC, TGA, FT-IR, and XRD) were used to characterize the process and results, including the crosslinking of the dissolved starch molecules and the particles formed from gelatinized starch during retrogradation process, which played an important role in improving the thermal stability of the composited gelatin films. Overall, the starch-gelatin composition provides a potential approach to improve gelatin film performance and benefit its applications in the food industry. Copyright © 2016 Elsevier B.V. All rights reserved.

  5. System reduction for nanoscale IC design

    CERN Document Server

    2017-01-01

    This book describes the computational challenges posed by the progression toward nanoscale electronic devices and increasingly short design cycles in the microelectronics industry, and proposes methods of model reduction which facilitate circuit and device simulation for specific tasks in the design cycle. The goal is to develop and compare methods for system reduction in the design of high dimensional nanoelectronic ICs, and to test these methods in the practice of semiconductor development. Six chapters describe the challenges for numerical simulation of nanoelectronic circuits and suggest model reduction methods for constituting equations. These include linear and nonlinear differential equations tailored to circuit equations and drift diffusion equations for semiconductor devices. The performance of these methods is illustrated with numerical experiments using real-world data. Readers will benefit from an up-to-date overview of the latest model reduction methods in computational nanoelectronics.

  6. LUBRICATION FILM FORMATION MECHANISM OF SLIPPER PAIRS IN LOW SPEED HIGH TORQUE HYDRAULIC MOTORS

    Institute of Scientific and Technical Information of China (English)

    LI Yong; SHI Guanglin; CHEN Zhaoneng

    2007-01-01

    Pressure-flow analytical formulas of lubrication film of slipper pairs on camshaft connecting rod type low speed high torque (LSHT) hydraulic motors are put forward. The bottom surface of slipper pairs is rectangle, and the effect of squeeze flow and pressure differential flow is considered. The dynamic process of lubrication film formation through squeezing is numerically studied by computer simulation. Effects of supply pressure, initial lubrication film thickness, velocity damping coefficient, loading impact and gravity, etc are studied. Advantages of novel slipper pairs with large oil cavity area are pointed out.

  7. Thin Film Chip Resistors with High Resistance and Low Temperature Coefficient of Resistance

    Institute of Scientific and Technical Information of China (English)

    王秀宇; 张之圣; 白天; 刘仲娥

    2010-01-01

    High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...

  8. Online Load Operating Mode of Oil Film Bearing in High Speed Wire Rolling Mill

    Institute of Scientific and Technical Information of China (English)

    LI Yugui; PANG Siqing; HUANG Qingxue; WANG Jianmei; ZHAO Chunjiang

    2006-01-01

    To study the mechanism of burnt damage of oil film bearing in high-speed wire rolling mill, reasonable temperature sensors are designed and calibrated, pressure block of rolling mill has been transformed into pressure sensors. Online temperature and load of oil film bearing in a domestic precision rolling F15 have been tested. Consequently, a large sum of valuable test data was obtained. The distributions rules of pressure and temperature under continuous online rolling state are recorded in detail. Theoretical and experimental results are beneficial to damage mechanism of oil film bearing, thus its service life could be prolonged. Moreover, such results could provide an important reference for online test and control.

  9. Preparation and structural properties of thin carbon films by very-high-frequency magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    高明伟; 叶超; 王响英; 何一松; 郭佳敏; 杨培芳

    2016-01-01

    Growth and structural properties of thin a-C films prepared by the 60 MHz very-high-frequency (VHF) magnetron sputtering were investigated. The energy and flux of ions impinging the substrate were also analyzed. It is found that the thin a-C films prepared by the 60 MHz sputtering have a lower growth rate, a smooth surface, and more sp3 contents. These features are related to the higher ion energy and the lower ions flux onto the substrate. Therefore, the 60 MHz VHF sputtering is more suitable for the preparation of thin a-C film with more sp3 contents.

  10. High-Mobility Ambipolar Organic Thin-Film Transistor Processed From a Nonchlorinated Solvent.

    Science.gov (United States)

    Sonar, Prashant; Chang, Jingjing; Kim, Jae H; Ong, Kok-Haw; Gann, Eliot; Manzhos, Sergei; Wu, Jishan; McNeill, Christopher R

    2016-09-21

    Polymer semiconductor PDPPF-DFT, which combines furan-substituted diketopyrrolopyrrole (DPP) and a 3,4-difluorothiophene base, has been designed and synthesized. PDPPF-DFT polymer semiconductor thin film processed from nonchlorinated hexane is used as an active layer in thin-film transistors. As a result, balanced hole and electron mobilities of 0.26 and 0.12 cm(2)/(V s) are achieved for PDPPF-DFT. This is the first report of using nonchlorinated hexane solvent for fabricating high-performance ambipolar thin-film transistor devices.

  11. The broad line type Ic supernova SN 2007ru: Adding to the diversity of type Ic supernovae

    CERN Document Server

    Sahu, D K; Anupama, G C; Gurugubelli, Uday K; Nomoto, Ken'ichi

    2008-01-01

    Photometric and spectral evolution of the type Ic supernova SN 2007ru during the first 3 months are presented. The spectra show broad spectral features due to very high expansion velocity, normally seen in hypernovae. The photospheric velocity is higher than other type Ic supernovae. It is lower than SN 1998bw at $\\sim$ 8 days after the explosion, but is comparable at later epochs. The light curve evolution of SN 2007ru indicates a fast rise time of 8$\\pm$3 days to $B$ band maximum and post-maximum decline more rapidly than other broad-line type Ic supernovae.With an absolute $V$ magnitude of -19.10, SN 2007ru is comparable in brightness with SN 1998bw and lies at the brighter end of the observed type Ic supernovae. The mass of \\Nifs is estimated to be $\\sim 0.4\\Msun$. The fast rise and decline of the light curve and the high expansion velocity suggest that SN 2007ru is an explosion with a high kinetic energy/ejecta mass ratio ($E_{\\rm K}/M_{\\rm {ej}}$). This adds to the diversity of type Ic supernovae.

  12. Optimization of Multilayer Laminated Film and Absorbent of Vacuum Insulation Panel for Use at High Temperature

    Science.gov (United States)

    Araki, Kuninari; Echigoya, Wataru; Tsuruga, Toshimitsu; Kamoto, Daigorou; Matsuoka, Shin-Ichi

    For the energy saving regulation and larger capacity, Vacuum Insulation Panel (VIP) has been used in refrigerators with urethane foam in recent years. VIP for low temperature is constructed by laminated plastic film, using heat welding of each neighboring part for keeping vacuum, so that the performance decrement is very large under high temperature. But recently high efficiency insulation material is desired for high temperature water holding devices (automatic vending machine, heat pump water heater, electric hot-water pot water, etc.), and we especially focused on cost and ability of the laminated plastic film and absorbent for high temperature VIP. We measured the heatproof temperature of plastic films and checked the amount of water vapor and out coming gas on temperature-programmed adsorption in absorbent. These results suggest the suitable laminated film and absorbent system for VIP use at high temperature, and the long-term reliability was evaluated by measuring thermal conductivity of high temperature. As a result it was found that high-retort pouch of CPP (cast polypropylene film) and adding of aluminum coating are the most suitable materials for use in the welded layers of high-temperature VIPs (105°C).

  13. Growth of highly textured PbTiO3 films on conductive substrate under hydrothermal conditions

    Science.gov (United States)

    Tang, Haixiong; Zhou, Zhi; Bowland, Christopher C.; Sodano, Henry A.

    2015-08-01

    Perovskite structure (ABO3) thin films have wide applications in electronic devices due to their unique properties, including high dielectric permittivity, ferroelectricity and piezoelectric coupling. Here, we report an approach to grow highly textured thick lead titanate (PbTiO3) films on conductive substrates by a two-step hydrothermal reaction. Initially, vertically aligned TiO2 nanowire arrays are grown on fluorine-doped tin oxide (FTO) coated glass, which act as template crystals for conversion to the perovskite structure. The PbTiO3 films are then converted from TiO2 NW arrays by diffusing Pb2+ ions into the template through a second hydrothermal reaction. The dielectric permittivity and piezoelectric coupling coefficient (d33) of the PbTiO3 films are as high as 795 at 1 kHz and 52 pm V-1, respectively. The reported process can also potentially be expanded for the assembly of other complex perovskite ATiO3 (A = Ba, Ca, Cd, etc) films by using the highly aligned TiO2 NW arrays as templates. Therefore, the approach introduced here opens up a new door to synthesize ferroelectric thin films on conductive substrates for application in sensors, actuators, and ultrasonic transducers that are important in various industrial and scientific areas.

  14. Synthesis and characterization of highly flexible thermoplastic films from cyanoethylated corn distillers dried grains with solubles.

    Science.gov (United States)

    Hu, Chunyan; Reddy, Narendra; Yan, Kelu; Yang, Yiqi

    2011-03-09

    Corn distillers dried grains with solubles (DDGS) can be made into highly flexible thermoplastic films without the need for plasticizers. DDGS is an abundantly available coproduct of ethanol production that is inexpensive ($80-130/ton) compared to most of the polymers used for thermoplastic applications. In this research, oil-and-zein-free DDGS was cyanoethylated using acrylonitrile, and cyanoethylation conditions were optimized to obtain high percent weight gain of up to 42%. Cyanoethylated DDGS was characterized using (1)H NMR, FTIR, DSC, and TGA. Cyanoethylated DDGS was compression molded into thermoplastic films, and the tensile properties of the films were studied. It was found that DDGS films with elongation as high as 38% and strength of 14 MPa could be obtained without the use of any plasticizers. Alternatively, films with strength as high as 651 MPa but with relatively low elongation (2.5%) were obtained by varying the extent of cyanoethylation. This research showed that cyanoethylation could be a viable approach to develop biothermoplastics from biopolymers for applications such as packing films, extrudates, and resins for composites.

  15. Development of High-Performance UV Detector Using Nanocrystalline Diamond Thin Film

    Directory of Open Access Journals (Sweden)

    C. R. Lin

    2014-01-01

    Full Text Available Nanocrystalline diamond (NCD films are promising materials for wide-spread applications due to their outstanding characteristics of chemical, physical, and highly smooth surface. Our present work aimed at the fabrication of high performance diamond-based UV detector. NCD films were prepared by microwave plasma enhanced chemical vapor deposition process, and then Au interdigital electrodes were deposited onto the surface of the as-grown NCD film by sputtering technique. Annealing procedures were conducted at various temperatures to obtain Ohmic contact of NCD/Au structure. The surface morphology, microstructure, and wettablity of the NCD films were analyzed by scanning electron microscopy, atomic forced microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and water contact angle measurement, respectively. The electrical property and photoconductivity of the fabricated devices were tested for UV detection application. It was found that the NCD films possessed high sp3 fraction of 68.6%, low surface roughness of 9.6 nm, and good hydrophobicity, as deposited under working pressure of 40 Torr. Also, the NCD/Au structure annealed at 500°C exhibited a good Ohmic contact characteristic, high detection efficiency, and fast response to UV irradiation in air ambient. The proposed study indeed demonstrates prospective applications of NCD films in UV detector, photocatalyst, solar cell, and so on.

  16. High-temperature conductivity in chemical bath deposited copper selenide thin films

    Science.gov (United States)

    Dhanam, M.; Manoj, P. K.; Prabhu, Rajeev. R.

    2005-07-01

    This paper reports high-temperature (305-523 K) electrical studies of chemical bath deposited copper (I) selenide (Cu 2-xSe) and copper (II) selenide (Cu 3Se 2) thin films. Cu 2-xSe and Cu 3Se 2 have been prepared on glass substrates from the same chemical bath at room temperature by controlling the pH. From X-ray diffraction (XRD) profiles, it has been found that Cu 2-xSe and Cu 3Se 2 have cubic and tetragonal structures, respectively. The composition of the chemical constituent in the films has been confirmed from XRD data and energy-dispersive X-ray analysis (EDAX). It has been found that both phases of copper selenide thin films have thermally activated conduction in the high-temperature range. In this paper we also report the variation of electrical parameters with film thickness and the applied voltage.

  17. Degradation testing and failure analysis of DC film capacitors under high humidity conditions

    DEFF Research Database (Denmark)

    Wang, Huai; Nielsen, Dennis Achton; Blaabjerg, Frede

    2015-01-01

    Metallized polypropylene film capacitors are widely used for high-voltage DC-link applications in power electronic converters. They generally have better reliability performance compared to aluminum electrolytic capacitors under electro-thermal stresses within specifications. However......, the degradation of the film capacitors is a concern in applications exposed to high humidity environments. This paper investigates the degradation of a type of plastic-boxed metallized DC film capacitors under different humidity conditions based on a total of 8700 h of accelerated testing and also post failure...... of interest is also presented. The study enables a better understanding of the humidity-related failure mechanisms and reliability performance of DC film capacitors for power electronics applications....

  18. On detection of the Fermi edge in in situ grown thin films of high- Tc oxides

    Science.gov (United States)

    Abrecht, M.; Ariosa, D.; Saleh, S. A.; Rast, S.; Margaritondo, G.; Onellion, M.; Pavuna, D.

    2001-11-01

    We discuss our systematic series of experiments on the photoelectric detection of the Fermi edge using a cylindrical mirror analyser on films of high- Tc oxides, grown in situ by pulsed laser ablation. The Fermi edge (comparable to the edge of the reference Ag) is very easily observed even in the two-phase BSCCO-2212 film that exhibits onsets of superconducting transitions, at 85 and 45 K. In contrast, the Fermi edge is weaker and more difficult to observe even in the state-of-the-art, highly epitaxial, monophase YBa 2Cu 3O 7- y (YBCO) and NdBa 2Cu 3O 7- y (NBCO-123) films (both with Tc=92 K). So far we could not detect the Fermi edge in the films of the double-`chain' YBCO-124.

  19. A new analytical model of high voltage silicon on insulator (SOI) thin film devices

    Institute of Scientific and Technical Information of China (English)

    Hu Sheng-Dong; Zhang Bo; Li Zhao-Ji

    2009-01-01

    A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (VB,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.

  20. High N-content a-C:N films elaborated by femtosecond PLD with plasma assistance

    Energy Technology Data Exchange (ETDEWEB)

    Maddi, C. [Université de Lyon, F-69003, Lyon, France, Université de Saint-Étienne, Laboratoire Hubert Curien (UMR 5516 CNRS) , 42000 Saint-Étienne (France); Donnet, C., E-mail: Christophe.Donnet@univ-st-etienne.fr [Université de Lyon, F-69003, Lyon, France, Université de Saint-Étienne, Laboratoire Hubert Curien (UMR 5516 CNRS) , 42000 Saint-Étienne (France); Loir, A.-S.; Tite, T. [Université de Lyon, F-69003, Lyon, France, Université de Saint-Étienne, Laboratoire Hubert Curien (UMR 5516 CNRS) , 42000 Saint-Étienne (France); Barnier, V. [Laboratoire Georges Friedel, Ecole Nationale Supérieure des Mines, 42023 Saint-Etienne (France); Rojas, T.C.; Sanchez-Lopez, J.C. [Instituto de Ciencia de Materiales de Sevilla (CSIC-US) , Avda. Américo Vespucio 49, 41092 Sevilla (Spain); Wolski, K. [Laboratoire Georges Friedel, Ecole Nationale Supérieure des Mines, 42023 Saint-Etienne (France); Garrelie, F. [Université de Lyon, F-69003, Lyon, France, Université de Saint-Étienne, Laboratoire Hubert Curien (UMR 5516 CNRS) , 42000 Saint-Étienne (France)

    2015-03-30

    Graphical abstract: - Highlights: • Nitrogen doped amorphous carbon films were deposited by DC reactive plasma femtosecond (fs) -PLD and conventional fs-PLD. • High nitrogen content in plasma assisted films. • More ordered sp2 rich graphitic clusters both in terms of structural and topological order. • Correlation length La of the clusters increases with nitrogen incorporation. • Formation of CN bonds at the expense of CC bonds with N content. • At the highest nitrogen concentration, terminal C≡N groups are incorporated in the film. • Correlation between film composition and plasma process. - Abstract: Amorphous carbon nitride (a-C:N) thin films are a interesting class of carbon-based electrode materials. Therefore, synthesis and characterization of these materials have found lot of interest in environmental analytical microsystems. Herein, we report the nitrogen-doped amorphous carbon thin film elaboration by femtosecond pulsed laser deposition (fs-PLD) both with and without a plasma assistance. The chemical composition and atomic bonding configuration of the films were investigated by multi-wavelength (MW) Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and electron energy-loss spectroscopy (EELS). The highest nitrogen content, 28 at.%, was obtained with plasma assistance. The I(D)/I(G) ratio and the G peak position increased as a function of nitrogen concentration, whereas the dispersion and full width at half maximum (FWHM) of G peak decreased. This indicates more ordered graphitic like structures in the films both in terms of topological and structural, depending on the nitrogen content. EELS investigations were correlated with MW Raman results. The interpretation of XPS spectra of carbon nitride films remains a challenge. Plasma assisted PLD in the femtosecond regime led to a significant high nitrogen concentration, which is highlighted on the basis of collisional processes in the carbon plasma plume interacting with the nitrogen

  1. Gafchromic EBT-XD film: Dosimetry characterization in high-dose, volumetric-modulated arc therapy.

    Science.gov (United States)

    Miura, Hideharu; Ozawa, Shuichi; Hosono, Fumika; Sumida, Naoki; Okazue, Toshiya; Yamada, Kiyoshi; Nagata, Yasushi

    2016-11-08

    Radiochromic films are important tools for assessing complex dose distributions. Gafchromic EBT-XD films have been designed for optimal performance in the 40-4,000 cGy dose range. We investigated the dosimetric characteristics of these films, including their dose-response, postexposure density growth, and dependence on scanner orientation, beam energy, and dose rate with applications to high-dose volumetric-modulated arc therapy (VMAT) verification. A 10 MV beam from a TrueBeam STx linear accelerator was used to irradiate the films with doses in the 0-4,000 cGy range. Postexposure coloration was analyzed at postirradiation times ranging from several minutes to 48 h. The films were also irradiated with 6 MV (dose rate (DR): 600 MU/min), 6 MV flattening filter-free (FFF) (DR: 1,400 MU/ min), and 10 MV FFF (DR: 2,400 MU/min) beams to determine the energy and dose-rate dependence. For clinical examinations, we compared the dose distribu-tion measured with EBT-XD films and calculated by the planning system for four VMAT cases. The red channel of the EBT-XD film exhibited a wider dynamic range than the green and blue channels. Scanner orientation yielded a variation of ~ 3% in the net optical density (OD). The difference between the film front and back scan orientations was negligible, with variation of ~ 1.3% in the net OD. The net OD increased sharply within the first 6 hrs after irradiation and gradually afterwards. No significant difference was observed for the beam energy and dose rate, with a variation of ~ 1.5% in the net OD. The gamma passing rates (at 3%, 3 mm) between the film- measured and treatment planning system (TPS)-calculated dose distributions under a high dose VMAT plan in the absolute dose mode were more than 98.9%. © 2016 The Authors.

  2. Conformal BaTiO3 Films with High Piezoelectric Coupling through an Optimized Hydrothermal Synthesis.

    Science.gov (United States)

    Zhou, Zhi; Bowland, Christopher C; Patterson, Brendan A; Malakooti, Mohammad H; Sodano, Henry A

    2016-08-24

    Two-dimensional (2D) ferroelectric films have vast applications due to their dielectric, ferroelectric, and piezoelectric properties that meet the requirements of sensors, nonvolatile ferroelectric random access memory (NVFeRAM) devices, and micro-electromechanical systems (MEMS). However, the small surface area of these 2D ferroelectric films has limited their ability to achieve higher memory storage density in NVFeRAM devices and more sensitive sensors and transducer. Thus, conformally deposited ferroelectric films have been actively studied for these applications in order to create three-dimensional (3D) structures, which lead to a larger surface area. Most of the current methods developed for the conformal deposition of ferroelectric films, such as metal-organic chemical vapor deposition (MOCVD) and plasma-enhanced vapor deposition (PECVD), are limited by high temperatures and unstable and toxic organic precursors. In this paper, an innovative fabrication method for barium titanate (BaTiO3) textured films with 3D architectures is introduced to alleviate these issues. This fabrication method is based on converting conformally grown rutile TiO2 nanowire arrays into BaTiO3 textured films using a simple two-step hydrothermal process which allows for thickness-controlled growth of conformal films on patterned silicon wafers coated with fluorine-doped tin oxide (FTO). Moreover, the processing parameters have been optimized to achieve a high piezoelectric coupling coefficient of 100 pm/V. This high piezoelectric response along with high relative dielectric constant (εr = 1600) of the conformally grown textured BaTiO3 films demonstrates their potential application in sensors, NVFeRAM, and MEMS.

  3. High-efficient n-i-p thin-film silicon solar cells

    NARCIS (Netherlands)

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a μc-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar

  4. Permalloy Film Array Spin Dynamics and High Performance Integrated Microwave Devices

    Science.gov (United States)

    2008-09-25

    new method for high-frequency characterization of patterned ferromagnetic thin films,” submitted to Journal of Applied Physics . (d) Manuscripts Number...characterization  of  patterned  ferromagnetic thin films,” submitted to  Journal   of   Applied   Physics .   iii. Hanqiao  Zhang,  Chunrong  Song  and

  5. Self-assembled Ti3C2Tx MXene film with high gravimetric capacitance.

    Science.gov (United States)

    Hu, Minmin; Li, Zhaojin; Zhang, Hui; Hu, Tao; Zhang, Chao; Wu, Zhen; Wang, Xiaohui

    2015-09-11

    Binder-free MXene films comprising Ti3C2Tx nanoflakes in a face-to-face fashion, achieved by a simple dropping-mild baking approach, exhibit high gravimetric capacitances up to 499 F g(-1) with excellent cyclability and rate performances. The entire electrode system including Ni-foam and MXene film shows volumetric capacitances in the range of 84-226 F cm(-3) depending on the loadings of MXene as active material.

  6. High-efficient n-i-p thin-film silicon solar cells

    NARCIS (Netherlands)

    Yang, G.

    2015-01-01

    In this thesis we present results of the development of n-i-p thin-film silicon solar cells on randomly textured substrates, aiming for highly efficient micromorph solar cells (i.e., solar cells based on a μc-Si:H bottom cell and a-Si:H top cell). For the efficiency of n-i-p thin-film silicon solar

  7. High-Work-Function Transparent Conductive Oxides with Multilayer Films

    Science.gov (United States)

    Song, Chunyan; Chen, Hong; Fan, Yi; Luo, Jinsong; Guo, Xiaoyang; Liu, Xingyuan

    2012-04-01

    Transparent conductive oxide (TCO) films using WO3/Ag/WO3 (WAW) were fabricated under room temperature conditions. WAW has a low sheet resistance of 12 Ω/sq and a work function of 6.334 eV. This is one of the TCOs with the highest work function. These properties make it useful for application in electroluminescent devices and solar cells. Both theoretical calculation and experimental results show that the two WO3 layers strongly affect transparency, while the Ag layer determines transmittance and electrical performances. These rules can be applied in all dielectric/metal/dielectric structures.

  8. High temperature polymer dielectric film-wire insulation

    Science.gov (United States)

    Nairus, John G.

    1994-01-01

    The highlights of the program are outlined including two major accomplishments. TRW identified and demonstrated the potential of two aromatic/heterocyclic polymers to have an outstanding and superior combination of electrical, thermal, and chemical resistance properties versus state-of-the-art Kapton for spacecraft and/or aircraft dielectric insulation applications. (Supporting data is provided in tables.) Feasibility was demonstrated for supporting/enabling technologies such as ceramic coatings, continuous film casting, and conductor wire wrapping, which are designed to accelerate qualification and deployment of the new wire insulation materials for USAF systems applications during the mid- to late-1990's.

  9. Design of a LOW Cost IC Tester

    Directory of Open Access Journals (Sweden)

    Liakot Ali

    2005-01-01

    Full Text Available Low cost Integrated Circuit (IC testing is now a burning issue in semiconductor technology. Conventional IC tester, Automatic Test Equipment (ATE, cannot cope with the today’s continuously increasing complexities in IC technology. Deterministic algorithm, which is an idea of 1960’s, is adopted in the ATE. Recently pseudo-random testing approach of IC testing has been emerged as an economically viable alternative to the expensive deterministic testing approach. This study introduces the design of a System-on-a-chip (Soc implementing pseudo-random test technique for low cost IC testing with reliable performance. It is capable of testing combinational circuits as well as sequential circuits with scan-port facilities efficiently. It can also be used for testing Printed Circuit Board (PCB interconnection faults.

  10. Highly Magneto-Responsive Elastomeric Films Created by a Two-Step Fabrication Process

    KAUST Repository

    Marchi, Sophie

    2015-08-24

    An innovative method for the preparation of elastomeric magnetic films with increased magneto-responsivity is presented. Polymeric films containing aligned magnetic microchains throughout their thickness are formed upon the magnetophoretic transport and assembly of microparticles during polymer curing. The obtained films are subsequently magnetized at a high magnetic field of 3 T directed parallel to the orientation of the microchains. We prove that the combination of both alignment of the particles along a favorable direction during curing and the subsequent magnetization of the solid films induces an impressive increase of the films’ deflection. Specifically, the displacements reach few millimeters, up to 85 times higher than those of the nontreated films with the same particle concentration. Such a process can improve the performance of the magnetic films without increasing the amount of magnetic fillers and, thus, without compromising the mechanical properties of the resulting composites. The proposed method can be used for the fabrication of magnetic films suitable as components in systems in which large displacements at relatively low magnetic fields are required, such as sensors and drug delivery or microfluidic systems, especially where remote control of valves is requested to achieve appropriate flow and mixing of liquids.

  11. High T(sub c) thin film superconductors: Preparation, patterning and characterization

    Science.gov (United States)

    Azoulay, J.

    A conventional oil-pumped vacuum system equipped with resistively heated tungsten boat sources was used for evaporation of bismuth- or yttrium-based cuprates for high T(sub c) thin film superconductors. A well-ground mixture with atomic proportions of bismuth, SrF2, CaF2 and copper for bismuth-based material, and of YF3, BaF2 and copper for yttrium-based material, was inserted into the boat and then resistively evaporated onto different substrates such as MgO, ZrO2 and SrTiO3 kept at room temperature. Yttrium-based thin films were found to have a better quality upon reduction of fluorine in the constituents. Thus, films prepared with an yttrium BaF2 and copper mixture show a metallic-like behavior, sharper transition and higher zero-resistance temperature as compared with that of films obtained by using a YF2 constiuent instead of yttrium. Bismuth-based thin films were found to lose bismuth during heat treatment unless the copper constiuent ended the evaporation process and was subsequently fully oxidized at 400 C. Bismuth-based patterned films were easily obtained by using a lift-off photolithographic method. Typical thickness of the films was measured to be about 0.5 micron after heat treatment.

  12. High-performance perovskite light-emitting diodes via morphological control of perovskite films.

    Science.gov (United States)

    Yu, Jae Choul; Kim, Da Bin; Jung, Eui Dae; Lee, Bo Ram; Song, Myoung Hoon

    2016-04-07

    Solution-processable perovskite materials have garnered tremendous attention because of their excellent charge carrier mobility, possibility of a tunable optical bandgap, and high photoluminescence quantum efficiency (PLQE). In particular, the uniform morphology of a perovskite film is the most important factor in realizing perovskite light-emitting diodes (PeLEDs) with high efficiency and full-coverage electroluminescence (EL). In this study, we demonstrate highly efficient PeLEDs that contain a perovskite film with a uniform morphology by introducing HBr into the perovskite precursor. The introduction of HBr into the perovskite precursor results in a perovskite film with a uniform, continuous morphology because the HBr increases the solubility of the inorganic component in the perovskite precursor and reduces the crystallization rate of the perovskite film upon spin-coating. Moreover, PeLEDs fabricated using perovskite films with a uniform, continuous morphology, which were deposited using 6 vol% HBr in a dimethylformamide (DMF)/hydrobromic acid (HBr) cosolvent, exhibited full coverage of the green EL emission. Finally, the optimized PeLEDs fabricated with perovskite films deposited using the DMF/HBr cosolvent exhibited a maximum luminance of 3490 cd m(-2) (at 4.3 V) and a luminous efficiency of 0.43 cd A(-1) (at 4.3 V).

  13. Investigation of high-k yttrium copper titanate thin films as alternative gate dielectrics

    Science.gov (United States)

    Grazia Monteduro, Anna; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Tasco, Vittorianna; Chaitanya Lekshmi, Indira; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D. D.; Maruccio, Giuseppe

    2016-10-01

    Nearly amorphous high-k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal-oxide-semiconductor (MOS) and metal-insulator-metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10-10 S cm-1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties.

  14. High-temperature superconductivity in potassium-coated multilayer FeSe thin films.

    Science.gov (United States)

    Miyata, Y; Nakayama, K; Sugawara, K; Sato, T; Takahashi, T

    2015-08-01

    The recent discovery of possible high-temperature (T(c)) superconductivity over 65 K in a monolayer FeSe film on SrTiO3 (refs 1-6) triggered a fierce debate on how superconductivity evolves from bulk to film, because bulk FeSe crystal exhibits a T(c) of no higher than 10 K (ref. 7). However, the difficulty in controlling the carrier density and the number of FeSe layers has hindered elucidation of this problem. Here, we demonstrate that deposition of potassium onto FeSe films markedly expands the accessible doping range towards the heavily electron-doped region. Intriguingly, we have succeeded in converting non-superconducting films with various thicknesses into superconductors with T(c) as high as 48 K. We also found a marked increase in the magnitude of the superconducting gap on decreasing the FeSe film thickness, indicating that the interface plays a crucial role in realizing the high-temperature superconductivity. The results presented provide a new strategy to enhance and optimize T(c) in ultrathin films of iron-based superconductors.

  15. High temperature Hall measurement setup for thin film characterization

    Science.gov (United States)

    Adnane, L.; Gokirmak, A.; Silva, H.

    2016-07-01

    Hall measurement using the van der Pauw technique is a common characterization approach that does not require patterning of contacts. Measurements of the Hall voltage and electrical resistivity lead to the product of carrier mobility and carrier concentration (Hall coefficient) which can be decoupled through transport models. Based on the van der Paw method, we have developed an automated setup for Hall measurements from room temperature to ˜500 °C of semiconducting thin films of a wide resistivity range. The resistivity of the film and Hall coefficient is obtained from multiple current-voltage (I-V) measurements performed using a semiconductor parameter analyzer under applied constant "up," zero, and "down" magnetic field generated with two neodymium permanent magnets. The use of slopes obtained from multiple I-Vs for the three magnetic field conditions offer improved accuracy. Samples are preferred in square shape geometry and can range from 2 mm to 25 mm side length. Example measurements of single-crystal silicon with known doping concentration show the accuracy and reliability of the measurement.

  16. 双星图的IC-指数%The IC-index of Double-stars

    Institute of Scientific and Technical Information of China (English)

    陈剑峰; 杨大庆

    2013-01-01

    已经知道双星图至多有两种极大IC-着色,并且其中一种情况下的IC-指数已经确定.在此基础上,研究了双星图的的另一种极大IC-着色,得到了在这种情况下的IC-指数.从而得到了双星图的所有极大IC-着色,且双星图的IC-指数为:M(DS(m,n))=(2m-1+1)(2n-1+1),其中2≤m≤n.%We known about the graph of double-stars contains two maximal IC-coloring at most,and one case of the IC-index have been determined.Based on this,this paper studied the another great IC-coloring of the graph of double-stars,and obtained in the circumstances of IC-index.So get the the graph of double-stars maximal IC-coloring,and the graph of double-stars IC-index as follow:M(DS(m,n)) =(2m-1 + 1)(2n-1 + 1),2 ≤ m ≤ n.

  17. Effect of Metallic Film in Diamond Growth from an Fe-Ni-C System at High Temperature and High Pressure

    Institute of Scientific and Technical Information of China (English)

    许斌; 李木森; 尹龙卫; 崔建军; 宫建红

    2003-01-01

    The metallic film surrounding a diamond single crystal, which plays an important role in the diamond growth from an Fe-Ni-C system, has been successfully investigated by using transmission-electron microscopy (TEM),Raman spectroscopy and x-ray photo-electron spectroscopy (XPS). Diamond and graphite were not found in surface layer (near diamond) of the film by TEM and Raman spectroscopy, but a parallel relationship exists between the (111) plane of γ-(Fe,Ni) and the (100) plane of (Fe, Ni)3C in this region. Compared with that of solvent metal (catalyst) near diamond, the binding energy in the valence bands of iron, nickel and carbon atoms of the film has an increase of 0.9 eV. According to the microstructures on the film obtained by the TEM, Raman spectra, and XPS, the catalytic mechanism of the film may be assumed as follows. In the surface layer of the film,iron and nickel atoms in the γ-(Fe, Ni) lattice can absorb carbon atoms in the (Fe, Ni)3C lattice and make them transform to an sp3-like state. Then carbon atoms with the sp3-like structure are separated from the (Fe,Ni)3C and stack on the growing diamond crystal. This study provides a direct evidence for the diamond growth from a metallic catalyst-graphite system under high temperature and high pressure.

  18. Graphene oxide and laponite composite films with high oxygen-barrier properties

    Science.gov (United States)

    Yoo, Jongtae; Lee, Sang Bong; Lee, Chang Kee; Hwang, Sung Wook; Kim, Chaerin; Fujigaya, Tsuyohiko; Nakashima, Naotoshi; Shim, Jin Kie

    2014-08-01

    The design and fabrication of oxygen barrier films is important for both fundamental and industrial applications. We prepared three different thin films composed of graphene oxide (GO) and laponite (LN), a typical low cost inorganic clay, with the GO/LN volume ratios of 1.9/0.1, 1.7/0.3 and 1.5/0.5 together with a double layer film of the GO and LN. We found that the films with GO/LN = 1.9/0.1 and the double layers exhibited high oxygen barrier and oxygen transmission rate values that reached 0.55 and 0.37 cm3 per m2 per atm per day, respectively, which were much lower than those of the films prepared from the pure GO, only LN and GO/LN = 1.7/0.3 and 1.5/0.5. This study is important for the design and fabrication of a film from GO-based all inorganic nanomaterials for applications in gas-barrier membranes.The design and fabrication of oxygen barrier films is important for both fundamental and industrial applications. We prepared three different thin films composed of graphene oxide (GO) and laponite (LN), a typical low cost inorganic clay, with the GO/LN volume ratios of 1.9/0.1, 1.7/0.3 and 1.5/0.5 together with a double layer film of the GO and LN. We found that the films with GO/LN = 1.9/0.1 and the double layers exhibited high oxygen barrier and oxygen transmission rate values that reached 0.55 and 0.37 cm3 per m2 per atm per day, respectively, which were much lower than those of the films prepared from the pure GO, only LN and GO/LN = 1.7/0.3 and 1.5/0.5. This study is important for the design and fabrication of a film from GO-based all inorganic nanomaterials for applications in gas-barrier membranes. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr03429e

  19. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  20. Ocular Shock Front in the Colliding Galaxy IC 2163

    CERN Document Server

    Kaufman, Michele; Struck, Curtis; Elmegreen, Debra Meloy; Bournard, Frederic; Brinks, Elias; Juneau, Stephanie; Sheth, Kartik

    2016-01-01

    ALMA observations in the CO 1 - 0 line of the interacting galaxies IC 2163 and NGC 2207 at 2'' x 1.5'' resolution reveal how the encounter drives gas to pile up in narrow, ~ 1 kpc wide, "eyelids" in IC 2163. IC 2163 and NGC 2207 are involved in a grazing encounter, which has led to development in IC 2163 of an eye-shaped (ocular) structure at mid-radius and two tidal arms. The CO data show that there are large velocity gradients across the width of each eyelid, with a mixture of radial and azimuthal streaming of gas at the outer edge of the eyelid relative to its inner edge. The sense of the radial streaming in the eyelids is consistent with the idea that gas from the outer part of IC 2163 flows inward until its radial streaming slows down abruptly and the gas piles up in the eyelids. The radial compression at the eyelids causes an increase in the gas column density by direct radial impact and also leads to a high rate of shear. We find a strong correlation between the molecular column densities and the magni...

  1. Low-cost, flexible, and self-cleaning 3D nanocone anti-reflection films for high-efficiency photovoltaics.

    Science.gov (United States)

    Tsui, Kwong-Hoi; Lin, Qingfeng; Chou, Hungtao; Zhang, Qianpeng; Fu, Huiying; Qi, Pengfei; Fan, Zhiyong

    2014-05-01

    Low-cost engineered nanotemplates are used to mold flexible nanocone anti-reflection (AR) films. Both optical reflectance measurements and photovoltaics characterizations demonstrate that the flexible nanocone AR films can considerably suppress device front-side reflectance and thus improve the power conversion efficiency of high-efficiency thin-film CdTe solar cells. Additionally, these nanocone AR films are found to be superhydrophobic and thus possess self-cleaning capability.

  2. Deposition of a-C:H films on inner surface of high-aspect-ratio microchannel

    Science.gov (United States)

    Hirata, Yuki; Choi, Junho

    2016-08-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared on inner surface of 100-μm-width microchannel by using a bipolar-type plasma based ion implantation and deposition. The microchannel was fabricated using a silicon plate, and two kinds of microchannels were prepared, namely, with a bottom layer (open at one end) and without a bottom layer (open at both ends). The distribution of thickness and hardness of films was evaluated by SEM and nanoindentation measurements, respectively, and the microstructures of films were evaluated by Raman spectroscopy. Furthermore, the behavior of ions and radicals was analyzed simultaneously by combining the calculation methods of Particle-In-Cell/Monte Carlo Collision and Direct Simulation Monte Carlo to investigate the coating mechanism for the microchannel. It was found that the film thickness decreased as the depth of the coating position increased in the microchannels where it is open at one end. The uniformity of the film thickness improved by increasing the negative pulse voltage because ions can arrive at the deeper part of the microchannel. In addition, the hardness increased as the depth of the coating position increased. This is because the radicals do not arrive at the deeper part of the microchannel, and the incident proportion of ions relative to that of radicals increases, resulting in a high hardness due to the amorphization of the film. The opening area of the microchannel where the aspect ratio is very small, radicals dominate the incident flux, whereas ions prevail over radicals above an aspect ratio of about 7.5. On the other hand, in the microchannels that are open at both ends, there were great improvements in uniformity of the film thickness, hardness, and the film structure. The a-C:H films were successfully deposited on the entire inner surface of a microchannel with an aspect ratio of 20.

  3. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  4. High Curie temperature Mn5Ge3 thin films produced by non-diffusive reaction

    Science.gov (United States)

    Assaf, E.; Portavoce, A.; Hoummada, K.; Bertoglio, M.; Bertaina, S.

    2017-02-01

    Polycrystalline Mn5Ge3 thin films were produced on SiO2 using magnetron sputtering and reactive diffusion (RD) or non-diffusive reaction (NDR). In situ X-ray diffraction and atomic force microscopy were used to determine the layer structures, and magnetic force microscopy, superconducting quantum interference device, and ferromagnetic resonance were used to determine their magnetic properties. RD-mediated layers exhibit similar magnetic properties as molecular beam epitaxy-grown monocrystalline Mn5Ge3 thin films, while NDR-mediated layers show magnetic properties similar to monocrystalline C-doped Mn5Ge3Cx thin films with 0.1 ≤ x ≤ 0.2. NDR appears as a complementary metal oxide semi-conductor-compatible efficient method to produce good magnetic quality high-Curie temperature Mn5Ge3 thin films.

  5. Influence of rapid thermal vacuum annealing and high temperature treatment on the properties of PSG films

    Energy Technology Data Exchange (ETDEWEB)

    Beschkov, G [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Science, 72 Tsarigradsko Chaussee, 1784 Sofia (Bulgaria); Bakardjieva, V; Alexieva, Z [Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Science, 72 Tsarigradsko Chaussee, 1784 Sofia (Bulgaria)], E-mail: vlabakar@phys.bas.bg

    2008-05-01

    The effect is presented of rapid thermal annealing (RTA) in vacuum and thermal annealing in water vapor at 850 deg. C on the properties of phosphosilicate glass (PSG) films deposited in PECVD and {mu}PCVD reactors. The films were characterized by etch rates and XPS and AES analyses. The RTA was carried out at 800 - 1400 deg. C at annealing times varying from 15 to 180 sec. The RTA caused a significant decrease in the etch rate, which is indicative of structural changes. The XPS and AES analyses showed that the PECVD PSG films contain excess Si due to the lower oxidation activity of N{sub 2}O. The excess Si can be oxidized in water vapor at high temperatures. The excess Si leads to a decrease in the etching rate of the PECVD PSG layers as compared to that of the {mu}PCVD films.

  6. Influence of rapid thermal vacuum annealing and high temperature treatment on the properties of PSG films

    Science.gov (United States)

    Beschkov, G.; Bakardjieva, V.; Alexieva, Z.

    2008-05-01

    The effect is presented of rapid thermal annealing (RTA) in vacuum and thermal annealing in water vapor at 850 °C on the properties of phosphosilicate glass (PSG) films deposited in PECVD and μPCVD reactors. The films were characterized by etch rates and XPS and AES analyses. The RTA was carried out at 800 - 1400 °C at annealing times varying from 15 to 180 sec. The RTA caused a significant decrease in the etch rate, which is indicative of structural changes. The XPS and AES analyses showed that the PECVD PSG films contain excess Si due to the lower oxidation activity of N2O. The excess Si can be oxidized in water vapor at high temperatures. The excess Si leads to a decrease in the etching rate of the PECVD PSG layers as compared to that of the μPCVD films.

  7. Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

    Directory of Open Access Journals (Sweden)

    Ningyu Ren

    2017-05-01

    Full Text Available ITO/Ag/ITO (IAI trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmittance over 94.25% at the wavelength of 550 nm and an average transmittance over the visual region of 88.04% were achieved. The calculated value of figure of merit (FOM reaches 80.9 10-3 Ω-1 for IAI films with 15-nm-thick Ag interlayer. From the morphology and structural characterization, IAI films could show an excellent correlated electric and optical performance if Ag grains interconnect with each other on the bottom ITO layer. These results indicate that IAI trilayer films, which also exhibit low surface roughness, will be well used in optoelectronic devices.

  8. Lift-off PMN-PT Thick Film for High Frequency Ultrasonic Biomicroscopy.

    Science.gov (United States)

    Zhu, Benpeng; Han, Jiangxue; Shi, Jing; Shung, K Krik; Wei, Q; Huang, Yuhong; Kosec, M; Zhou, Qifa

    2010-10-01

    Piezoelectric 0.65Pb(Mg(1/3)Nb(2/3))O(3)-0.35PbTiO(3) (PMN-35PT) thick film with a thickness of approximately 12 µm has been deposited on the platinum buffered Si substrate via a sol-gel composite method. The separation of the film from the substrate was achieved using a wet chemical method. The lifted-off PMN-35PT thick film exhibited good dielectric and ferroelectric properties. At 1 kHz, the dielectric constant and the dielectric loss were 3,326 and 0.037, respectively, while the remnant polarization was 30.0 µC/cm(2). A high frequency single element acoustic transducer fabricated with this film showed a bandwidth at -6 dB of 63.6% at 110 MHz.

  9. Strain and High Temperature Superconductivity: Unexpected Results from Direct Electronic Structure Measurements in Thin Films

    Science.gov (United States)

    Abrecht, M.; Ariosa, D.; Cloetta, D.; Mitrovic, S.; Onellion, M.; Xi, X.; Margaritondo, G.; Pavuna, D.

    2003-07-01

    Angle-resolved photoemission spectroscopy reveals very surprising strain-induced effects on the electronic band dispersion of epitaxial La2-xSrxCuO4-δ thin films. In strained films we measure a band that crosses the Fermi level (EF) well before the Brillouin zone boundary. This is in contrast to the flat band reported in unstrained single crystals and in our unstrained films, as well as in contrast to the band flattening predicted by band structure calculations for in-plane compressive strain. In spite of the density of states reduction near EF, the critical temperature increases in strained films with respect to unstrained samples. These results require a radical departure from commonly accepted notions about strain effects on high temperature superconductors, with possible general repercussions on superconductivity theory.

  10. Sol-gel processing of highly transparent conducting Cd2SnO4 thin films

    Science.gov (United States)

    Bel-Hadj-Tahar, Radhouane; Bel-Hadj-Tahar, Noureddine; Belhadj Mohamed, Abdellatif

    2015-03-01

    Polycrystalline thin films of cadmium stannate (Cd2SnO4) (CTO) were coated on corning glass substrates by sol-gel method. The films were fired at different temperatures and annealed in inert ambient (N2) at 680°C. The structural, optical, and electrical properties of dip-coated cadmium-tin-oxide (CTO) thin films are discussed. CTO layers with a Hall mobility of 30 cm2/Vs and a carrier density of 1.4 × 1021 cm-3 resulting in a resistivity of 5 × 10-4 Ω cm have been deposited. Dip-coating conditions must be carefully monitored to produce consistent films. The high electronic conductivity is due to two effective mechanisms of n-type doping: (i) stoichiometric deviation and (ii) self-doping.

  11. Pulsed laser deposition of high-quality thin films of the insulating ferromagnet EuS

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qi I., E-mail: qiyang@stanford.edu [Department of Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Zhao, Jinfeng; Risbud, Subhash H. [Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616 (United States); Zhang, Li; Dolev, Merav [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Fried, Alexander D. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Marshall, Ann F. [Stanford Nanocharacterization Laboratory, Stanford University, Stanford, California 94305 (United States); Kapitulnik, Aharon [Department of Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)

    2014-02-24

    High-quality thin films of the ferromagnetic insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al{sub 2}O{sub 3} (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties opens the gate for future devices that require a true ferromagnetic insulator.

  12. Electrical properties of Y-Ba-Na-Cu-O high Tc superconductors thin films

    Energy Technology Data Exchange (ETDEWEB)

    Verdyan, A. (Center for Theoretical Education Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv Univ. (Israel)); Lapsker, I. (Center for Theoretical Education Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv Univ. (Israel)); Azoulay, J. (Center for Theoretical Education Holon (Israel) Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel-Aviv Univ. (Israel))

    1993-04-20

    Y-Ba-Na-Cu-O high Tc superconductors thin films deposited on MgO substrate by resistive evaporation technique were found to have improved electrical properties as compared to pure Y-Ba-Cu-O thin films similarly prepared. A simple conventional inexpensive vacuum system housing a single resistively tungsten heated source was used for the deposition. Pulverized mixture of Y, BaF[sub 2], NaF and Cu in the appropriate atomic proportion was evaporated onto the substrates whose temperature was held constant at 400 C during the evaporation. In situ heat treatment has been carried out at 700 C under oxygen partial pressure of 7 pa. The films thus obtained were found to have the normal superconductors orthorhombic phase at room temperature without any further ex situ heat treatment. The films were characterized and analyzed by X-ray diffraction auger election spectroscopy and four point dc electrical measurements. (orig.)

  13. Electrical properties of Y-Ba-Na-Cu-O high Tc superconductors thin films

    Science.gov (United States)

    Verdyan, A.; Lapsker, I.; Azoulay, J.; Sackler, Raymond; Sackler, Beverly

    1993-04-01

    Y-Ba-Na-Cu-O high Tc superconductors thin films deposited on MgO substrate by resistive evaporation technique were found to have improved electrical properties as compared to pure Y-Ba-Cu-O thin films similarly prepared. A simple conventional inexpensive vacuum system housing a single resistively tungsten heated source was used for the deposition. Pulverized mixture of Y, BaF 2, NaF and Cu in the appropriate atomic proportion was evaporated onto the substrates whose temperature was held constant at 400°C during the evaporation. In situ heat treatment has been carried out at 700°C under oxygen partial pressure of 7 pa. The films thus obtained were found to have the normal superconductors orthorhombic phase at room temperature without any further ex situ heat treatment. The films were characterized and analyzed by x-ray diffraction auger electron spectroscopy and four point dc electrical measurements.

  14. Enhanced high temperature thermoelectric response of sulphuric acid treated conducting polymer thin films

    KAUST Repository

    Sarath Kumar, S. R.

    2015-11-24

    We report the high temperature thermoelectric properties of solution processed pristine and sulphuric acid treated poly(3, 4-ethylenedioxythiophene):poly(4-styrenesulfonate) (or PEDOT:PSS) films. The acid treatment is shown to simultaneously enhance the electrical conductivity and Seebeck coefficient of the metal-like films, resulting in a five-fold increase in thermoelectric power factor (0.052 W/m. K ) at 460 K, compared to the pristine film. By using atomic force micrographs, Raman and impedance spectra and using a series heterogeneous model for electrical conductivity, we demonstrate that acid treatment results in the removal of PSS from the films, leading to the quenching of accumulated charge-induced energy barriers that prevent hopping conduction. The continuous removal of PSS with duration of acid treatment also alters the local band structure of PEDOT:PSS, resulting in simultaneous enhancement in Seebeck coefficient.

  15. Highly resistive epitaxial Mg-doped GdN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, C.-M.; Warring, H.; Trodahl, H. J.; Ruck, B. J.; Natali, F., E-mail: franck.natali@vuw.ac.nz [MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington (New Zealand); Vézian, S.; Damilano, B.; Cordier, Y. [Centre de Recherche sur l' Hétéro-Épitaxie et ses Applications (CRHEA), Centre National de la Recherche Scientifique, Rue Bernard Gregory, 06560 Valbonne (France); Granville, S. [MacDiarmid Institute for Advanced Materials and Nanotechnology, Robinson Research Institute, Victoria University of Wellington, P.O. Box 33436, Lower Hutt 5046 (New Zealand); Al Khalfioui, M. [Centre de Recherche sur l' Hétéro-Épitaxie et ses Applications (CRHEA), Centre National de la Recherche Scientifique, Rue Bernard Gregory, 06560 Valbonne (France); University of Nice Sophia Antipolis, Parc Valrose, 06102 Nice Cedex 2 (France)

    2015-01-12

    We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 10{sup 3} Ω cm and carrier concentrations of 10{sup 16 }cm{sup −3} are obtained for films with Mg concentrations up to 5 × 10{sup 19} atoms/cm{sup 3}. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali, B. J. Ruck, H. J. Trodahl, D. L. Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond, and C. Meyer, Phys. Rev. B 87, 035202 (2013)].

  16. Fabrication and Magnetic Properties of Highly Oriented ZnO:Eu Films by Sol-Gel Process

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A series of Eu-doped ZnO films were prepared by a sol-gel method. Precursor and films were characterized by thermal analysis (TG-DTA), X-ray diffraction (XRD), scanning electron microscope (SEM), UV-vis spectra, as well as the magnetism measurement. The wurtzite structure of obtained films presents an extreme high c-orientation character. The film susceptibility resembles a Curie-Weiss behavior at high temperature, and presents an obvious enhancement at low temperature, indicating the presence of antiferromagnetic interactions in the Zn0.9Eu0.1O films.

  17. Preparation of free-standing diamond films for high frequency SAW devices

    Institute of Scientific and Technical Information of China (English)

    LIU Jian-min; XIA Yi-ben; WANG Lin-jun; SU Qing-feng; ZHAO Ping; XU Run; PENG Hong-yan; SHI Wei-min

    2006-01-01

    Free-standing diamond films were prepared by hot filament chemical vapor deposition (HFCVD) method under different conditions. Inter-digital transducers (IDTs) were formed on the nucleation sides of free-standing diamond films by photolithography technique. Then piezoelectric ZnO films were deposited by radio-frequency(RF) reactive magnetron sputtering to obtain the ZnO/diamond film structures. Surface morphologies of the nucleation sides and the IDTs were characterized by means of scanning electron microscopy (SEM),atomic force microscope (AFM) and optical microscopy. The results indicate that the surfaces of nucleation sides are very smooth and the IDTs are of high quality without discontinuity and short circuit phenomenon. Raman spectra show the sharp diamond feature peak at about 1 334 cm-1 and the small amount of non-diamond carbon in the nucleation side. X-ray diffraction (XRD) patterns of the structure of ZnO/diamond films show a strong diffraction peak of ZnO (002),which indicates that as-sputtered ZnO films are highly c-axis oriented.

  18. High-throughput film-densitometry: An efficient approach to generate large data sets

    Energy Technology Data Exchange (ETDEWEB)

    Typke, Dieter; Nordmeyer, Robert A.; Jones, Arthur; Lee, Juyoung; Avila-Sakar, Agustin; Downing, Kenneth H.; Glaeser, Robert M.

    2004-07-14

    A film-handling machine (robot) has been built which can, in conjunction with a commercially available film densitometer, exchange and digitize over 300 electron micrographs per day. Implementation of robotic film handling effectively eliminates the delay and tedium associated with digitizing images when data are initially recorded on photographic film. The modulation transfer function (MTF) of the commercially available densitometer is significantly worse than that of a high-end, scientific microdensitometer. Nevertheless, its signal-to-noise ratio (S/N) is quite excellent, allowing substantial restoration of the output to ''near-to-perfect'' performance. Due to the large area of the standard electron microscope film that can be digitized by the commercial densitometer (up to 10,000 x 13,680 pixels with an appropriately coded holder), automated film digitization offers a fast and inexpensive alternative to high-end CCD cameras as a means of acquiring large amounts of image data in electron microscopy.

  19. Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

    2016-08-01

    We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

  20. High-Energy-Density Poly(styrene-co-acrylonitrile) Thin Films

    Science.gov (United States)

    Wen, Fei; Xu, Zhuo; Xia, Weimin; Ye, Hongjun; Wei, Xiaoyong; Zhang, Zhicheng

    2013-12-01

    The dielectric response of poly(styrene-co-acrylonitrile) (PSAN) thin films fabricated by a solution casting process was investigated in this work. Linear dielectric behavior was obtained in PSAN films under an electric field at frequencies from 100 Hz to 1 MHz and temperature of -50°C to 100°C. The polymer films exhibited an intermediate dielectric permittivity of 4 and low dielectric loss (tan δ) of 0.027. Under 400 MV/m, the energy density of the PSAN films was 6.8 J/cm3, which is three times higher than that of biaxially oriented polypropylene (BOPP) (about 1.6 J/cm3). However, their charge-discharge efficiency (about 90%) was rather close to that of BOPP. The calculated effective dielectric permittivity of the PSAN films under high electric field was as high as 9, which may be attributed to the improved displacement of the cyanide groups (-CN) polarized at high electric fields. These high-performance features make PSAN attractive for high-energy-density capacitor applications.

  1. In-Situ Formed Type I Nanocrystalline Perovskite Film for Highly Efficient Light-Emitting Diode.

    Science.gov (United States)

    Lee, Jin-Wook; Choi, Yung Ji; Yang, June-Mo; Ham, Sujin; Jeon, Sang Kyu; Lee, Jun Yeob; Song, Young-Hyun; Ji, Eun Kyung; Yoon, Dae-Ho; Seo, Seongrok; Shin, Hyunjung; Han, Gil Sang; Jung, Hyun Suk; Kim, Dongho; Park, Nam-Gyu

    2017-03-28

    Excellent color purity with a tunable band gap renders organic-inorganic halide perovskite highly capable of performing as light-emitting diodes (LEDs). Perovskite nanocrystals show a photoluminescence quantum yield exceeding 90%, which, however, decreases to lower than 20% upon formation of a thin film. The limited photoluminescence quantum yield of a perovskite thin film has been a formidable obstacle for development of highly efficient perovskite LEDs. Here, we report a method for highly luminescent MAPbBr3 (MA = CH3NH3) nanocrystals formed in situ in a thin film based on nonstoichiometric adduct and solvent-vacuum drying approaches. Excess MABr with respect to PbBr2 in precursor solution plays a critical role in inhibiting crystal growth of MAPbBr3, thereby forming nanocrystals and creating type I band alignment with core MAPbBr3 by embedding MAPbBr3 nanocrystals in the unreacted wider band gap MABr. A solvent-vacuum drying process was developed to preserve nanocrystals in the film, which realizes a fast photoluminescence lifetime of 3.9 ns along with negligible trapping processes. Based on a highly luminescent nanocrystalline MAPbBr3 thin film, a highly efficient green LED with a maximum external quantum efficiency of 8.21% and a current efficiency of 34.46 cd/A was demonstrated.

  2. High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

    Science.gov (United States)

    Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J.; Zhang, Yanliang

    2016-09-01

    Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm2 with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.

  3. High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

    Science.gov (United States)

    Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J.; Zhang, Yanliang

    2016-01-01

    Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm2 with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications. PMID:27615036

  4. High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals.

    Science.gov (United States)

    Varghese, Tony; Hollar, Courtney; Richardson, Joseph; Kempf, Nicholas; Han, Chao; Gamarachchi, Pasindu; Estrada, David; Mehta, Rutvik J; Zhang, Yanliang

    2016-09-12

    Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm(2) with 60 °C temperature difference between the hot side and cold side. The highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.

  5. Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

    Science.gov (United States)

    Hazra, D.; Tsavdaris, N.; Jebari, S.; Grimm, A.; Blanchet, F.; Mercier, F.; Blanquet, E.; Chapelier, C.; Hofheinz, M.

    2016-10-01

    Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ({T}{{c}}˜ 16.5 {{K}}) and largest gap among conventional superconductors. In its thin-film form, the T c of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin films (below 50 nm) with high T c. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than previously reported, characterized by a Ioffe-Regel parameter ({k}{{F}}{\\ell }) ˜ 12. Accordingly we observe {T}{{c}}˜ 17.06 {{K}} (point of 50% of normal state resistance), the highest value reported so far for films of thickness 50 nm or less, indicating that HTCVD could be particularly useful for growing high quality NbN thin films.

  6. Molybdenum sputtering film characterization for high gradient accelerating structures

    Institute of Scientific and Technical Information of China (English)

    S.Bini; B.Spataro; A.Marcelli; S.Sarti; V.A.Dolgashev; S.Tantawi; A.D.Yeremian

    2013-01-01

    Technological advancements are strongly required to fulfill the demands of new accelerator devices with the highest accelerating gradients and operation reliability for the future colliders.To this purpose an extensive R&D regarding molybdenum coatings on copper is in progress.In this contribution we describe chemical composition,deposition quality and resistivity properties of different molybdenum coatings obtained via sputtering.The deposited films are thick metallic disorder layers with different resistivity values above and below the molibdenum dioxide reference value.Chemical and electrical properties of these sputtered coatings have been characterized by Rutherford backscattering,XANES and photoemission spectroscopy.We will also consider multiple cells standing wave section coated by a molybdenum layer designed to improve the performance of X-Band accelerating systems.

  7. High temperature behaviour of thermoelectric power of implanted polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Moreau, C.; Ratier, B.; Moliton, A.; Francois, B. [LEPOFI, Faculte des Sciences, Limoges (France)]|[Institut Charles Sadron, Strasbourg (France)

    1995-12-31

    The results of thermopower S measurements performed on implanted polyparaphenylene and polyimide films between 150 K and 450 K are presented. The implantations of Caesium or Iodine ions in polyparaphenylene with low parameters induce a sign of S characteristic to chemical nature of the implanted ions and an increase of lSl at around 350 K due to a transition from a VRH process to a polaronic conduction. With Iodine implanted sample at higher energy (E = 250 keV) and low dose (D = 2 x 10{sup 15} ions/cm{sup 2}) a transition from p type to n type doping at 400 K is attributed to a migration of negative oxygen ions as in the case of polyimide samples implanted with Caesium and Iodine ions where a similar behaviour of S is found. (Author).

  8. Silicon carbide thin films for high temperature microelectromechanical systems

    Science.gov (United States)

    Fleischman, Aaron Judah

    Silicon Carbide (SiC) was studied for use as a material in microelectromechanical systems (MEMS). An APCVD reactor was built to deposit SiC on 100-mm diameter substrates. 3C-SiC films were grown heteroepitaxially atop 100-mm Si wafers. SiC was deposited atop suitable sacrificial layers of polysilicon and thermal oxide. The reactor gas flow was modeled using finite element techniques. The gas flow formed a recirculating pattern, with fresh reactant gases injected at the top of the reactor, traveling down the inside sidewalls and introduced at the bottom of the wafer, forming a plume of heated gases rising to the top of the reactor. This recirculation pattern explains the gradually decreasing growth rate from the wafer's bottom to its top as reactant gases are gradually depleted as they rise. Intentional doping of 3C-SiC films was studied, using diborane and phosphine dopant sources. SIMS indicated that B and P could be incorporated into 3C-SiC films, however B doped films were electrically compensated due to trace amounts of nitrogen in the diborane. Boron concentrations above 3C-SiC's solid solubility caused the SiC to become polycrystalline. Phosphorus incorporation was less predictable and did not vary linearly with phosphine flow rates. A reactive ion etch (REE) process was developed to etch 3C-SiC. Addition of He to the plasma chemistry enhanced the etch rates and etch anisotropy of the 3C-SiC. The etch recipe also produced similar results for polycrystalline SiC on polysilicon and thermal oxide. A maximum SiC etch rate of 1,267 A/min with a selectivity of 1.4 to Si was obtained. Using the above methods, SiC resonant devices were fabricated using polysilicon and thermal oxide as sacrificial layers. Polysilicon resonant devices were fabricated for comparison. The devices were tested by measuring their resonant frequency at room and elevated temperatures to 900°C to determine Young's modulus and its temperature dependence. All devices showed resonant frequency

  9. Thin-Film Microtransformer for High Frequency Power Applications

    Directory of Open Access Journals (Sweden)

    Dinulovic Dragan

    2014-07-01

    Full Text Available This paper describes a development of a microtransformer device fabricated using thin film technology. The device is designed for higher switching frequencies beyond to 50 MHz power applications. A especially by the microtransformer is a design, which allows wide flexibility of a device by choosing a different values of an inductance and of a windings ratio. The microtransformer device is integrated on silicon substrate consisting of a closed magnetic core and six coils. Both, primary and secondary device side consist three coils. Therefore, this design allows using of a device for different switching frequencies. As a magnetic material for transformer core a permalloy NiFe45/55 was chosen.

  10. Molybdenum sputtering film characterization for high gradient accelerating structures

    CERN Document Server

    Bini, S; Marcelli, A; Sarti, S; Dolgashev, V A; Tantawi, S; Yeremian, A D; Higashi, Y; Grimaldi, M G; Romano, L; Ruffino, F; Parodi, R; Cibin, G; Marrelli, C; Migliorati, M; Caliendo, C

    2012-01-01

    Technological advancements are strongly required to fulfill the demands of new accelerator devices with the highest accelerating gradients and operation reliability for the future colliders. To this purpose an extensive R&D regarding molybdenum coatings on copper is in progress. In this contribution we describe chemical composition, deposition quality and resistivity properties of different molybdenum coatings obtained via sputtering. The deposited films are thick metallic disorder layers with different resistivity values above and below the molibdenum dioxide reference value. Chemical and electrical properties of these sputtered coatings have been characterized by Rutherford backscattering, XANES and photoemission spectroscopy. We will also present a three cells standing wave section coated by a molybdenum layer $\\sim$ 500 nm thick designed to improve the performance of X-Band accelerating systems.

  11. IC-coloring and IC-index of Octopus Graphs%章鱼图的IC-着色和IC-指数

    Institute of Scientific and Technical Information of China (English)

    杨杨; 王力工

    2014-01-01

    章鱼图H(Cm,n)是指由圈Cm的一个顶点与星图STn=K1,n的中心重迭得到的图,研究了章鱼图H(Cm,n)的IC-着色问题,通过分类讨论的方法,分别得到了当m=3,4,5,n≥1时章鱼图H(Cm,n)的极大IC-着色和它们相应的IC-指数,并提出章鱼图H(Cm,n)一个上界猜想。%The octopus graph H(Cm, n) is formed by identifying a vertex of the cycle Cm and the center of a star STn=K1,n . In this paper, the problem of IC-colorings on the octopus graph is studied. When m=3,4,5,n≥1 , IC-indices and maximal IC-colorings of the octopus graph H(Cm, n) are obtained respectively. A conjecture for the up-per bound of the IC-index of the octopus graph is proposed.

  12. A Novel Method for Detection and Removal of Line Scratch in High Resolution Digital Film

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    With increasing need of high quality movie, more and more standard resolution films are upconverted to the high-resolution films. After this operation, the defects exist in the old movie are more obvious because they are enlarged in size, therefore, an efficient artifacts detection method with more precise result and lower computational complexity is in need. This paper provided a line scratch mathematical model, which derives from the Kokaram model and Bruni model, and then gave a detection method to meet the requirements of the high-resolution video application.

  13. Polyester-based thin films with high photosensitivity

    Energy Technology Data Exchange (ETDEWEB)

    POTTER,KELLY SIMMONS; POTTER JR.,BARRETT G.; WHEELER,DAVID R.; JAMISON,GREGORY M.

    2000-02-29

    A great deal of research has been done to understand the photosensitive optical response of inorganic glasses, which exhibit a permanent, photo-induced refractive index change due to the presence of optically active point defects in the glass structure. In the present work, the authors have performed a preliminary study of the intrinsic photosensitivity of a polyester containing a cinnamylindene malonate group (CPE, a photo- and thermal-crosslinkable group) for use in photonic waveguide devices. Thin films of CPE (approximately 0.5 microns thick) were spun onto fused silica substrates. Optical absorption in the thin films was evaluated both before and after exposure to UV radiation sources. It was found that the polyester exhibits two dominant UV absorption bands centered about 240 nm and 330 nm. Under exposure to 337 nm radiation (nitrogen laser) a marked bleaching of the 330 nm band was observed. This band bleaching is a direct result of the photo-induced crosslinking in the cinnamylindene malonate group. Exposure to 248 nm radiation (excimer laser), conversely, resulted in similar bleaching of the 330 nm band but was accompanied by nearly complete bleaching of the higher energy 240 nm band. Based on a Kramers-Kronig analysis of the absorption changes, refractive index changes on the order of {minus}10{sup {minus}2} are estimated. Confirmation of this calculation has been provided via ellipsometry which estimates a refractive index change at 632 nm of {minus}0.061 {+-} 0.002. Thus, the results of this investigation confirm the photosensitive potential of this type of material.

  14. High-rate deposition of nano-crystalline silicon thin films on plastics

    Energy Technology Data Exchange (ETDEWEB)

    Marins, E.; Guduru, V.; Cerqueira, F.; Alpuim, P. [Centro de Fisica, Universidade do Minho, 4800-058 Guimaraes, 4710-057 Braga (Portugal); Ribeiro, M. [Centro de Nanotecnologia e Materiais Tecnicos, Funcionais e Inteligentes (CeNTI), 4760-034 Vila Nova de Famalicao (Portugal); Bouattour, A. [Institut fuer Physikalische Elektronik (ipe), Universitaet Stuttgart, 70569 Stuttgart (Germany)

    2011-03-15

    Nanocrystalline silicon (nc-Si:H) is commonly used in the bottom cell of tandem solar cells. With an indirect bandgap, nc-Si:H requires thicker ({proportional_to}1 {mu}m) films for efficient light harvesting than amorphous Si (a-Si:H) does. Therefore, thin-film high deposition rates are crucial for further cost reduction of highly efficient a-Si:H based photovoltaic technology. Plastic substrates allow for further cost reduction by enabling roll-to-roll inline deposition. In this work, high nc-Si:H deposition rates on plastic were achieved at low substrate temperature (150 C) by standard Radio-frequency (13.56 MHz) Plasma Enhanced Chemical Vapor Deposition. Focus was on the influence of deposition pressure, inter-electrode distance (1.2 cm) and high power coupled to the plasma, on the hydrogen-to-silane dilution ratios (HD) necessary to achieve the amorphous-to-nanocrystalline phase transition and on the resulting film deposition rate. For each pressure and rf-power, there is a value of HD for which the films start to exhibit a certain amount of crystalline fraction. For constant rf-power, this value increases with pressure. Within the parameter range studied the deposition rate was highest (0.38 nm/s) for nc-Si:H films deposited at 6 Torr, 700 mW/cm{sup 2} using HD of 98.5%. Decreasing the pressure to 3 Torr (1.5 Torr) and rf-power to 350 mW/cm{sup 2} using HD - 98.5% deposition rate is 0.12 nm/s (0.076 nm/s). Raman crystalline fraction of these films is 72, 62 and 53% for the 6, 3 and 1.5 Torr films, respectively (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Analog IC Design at the University of Twente

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    This article describes some recent research results from the IC Design group of the University of Twente, located in Enschede, The Netherlands. Our research focuses on analog CMOS circuit design with emphasis on high frequency and broadband circuits. With the trend of system integration in mind, we

  16. Analog IC Design at the University of Twente

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    This article describes some recent research results from the IC Design group of the University of Twente, located in Enschede, The Netherlands. Our research focuses on analog CMOS circuit design with emphasis on high frequency and broadband circuits. With the trend of system integration in mind, we

  17. SPROC: A multiple-processor DSP IC

    Science.gov (United States)

    Davis, R.

    1991-01-01

    A large, single-chip, multiple-processor, digital signal processing (DSP) integrated circuit (IC) fabricated in HP-Cmos34 is presented. The innovative architecture is best suited for analog and real-time systems characterized by both parallel signal data flows and concurrent logic processing. The IC is supported by a powerful development system that transforms graphical signal flow graphs into production-ready systems in minutes. Automatic compiler partitioning of tasks among four on-chip processors gives the IC the signal processing power of several conventional DSP chips.

  18. Ultrafast formation of air-processable and high-quality polymer films on an aqueous substrate

    Science.gov (United States)

    Noh, Jonghyeon; Jeong, Seonju; Lee, Jung-Yong

    2016-08-01

    Polymer solar cells are attracting attention as next-generation energy sources. Scalable deposition techniques of high-quality organic films should be guaranteed to realize highly efficient polymer solar cells in large areas for commercial viability. Herein, we introduce an ultrafast, scalable, and versatile process for forming high-quality organic films on an aqueous substrate by utilizing the spontaneous spreading phenomenon. This approach provides easy control over the thickness of the films by tuning the spreading conditions, and the films can be transferred to a variety of secondary substrates. Moreover, the controlled Marangoni flow and ultrafast removal of solvent during the process cause the films to have a uniform, high-quality nanomorphology with finely separated phase domains. Polymer solar cells were fabricated from a mixture of polymer and fullerene derivatives on an aqueous substrate by using the proposed technique, and the device exhibited an excellent power conversion efficiency of 8.44 %. Furthermore, a roll-to-roll production system was proposed as an air-processable and scalable commercial process for fabricating organic devices.

  19. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

    Science.gov (United States)

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-01-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures. PMID:26153533

  20. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method.

    Science.gov (United States)

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-07-08

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]n(RS)[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures.

  1. Immobilization of biomolecules on cysteamine-modified polyaniline film for highly sensitive biosensing.

    Science.gov (United States)

    Cai, Qi; Xu, Baojian; Ye, Lin; Di, Zengfeng; Zhang, Jishen; Jin, Qinghui; Zhao, Jianlong; Xue, Jian; Chen, Xianfeng

    2014-03-01

    We present a new cysteamine (CS)-modified polyaniline (PANI) film for highly efficient immobilization of biomolecules in biosensing technology. This electrochemical deposited PANI film treated with CS and glutaraldehyde could be employed as an excellent substrate for biomolecules immobilization. The parameters of PANI growth were optimized to obtain suitable surface morphology of films for biomolecules combination with the help of electron and atomic force microscopy. Cyclic voltammetry (CV) was utilized to illustrate the different electrochemical activities of each modified electrode. Due to the existence of sulfydryl group and amino group in CS, surface modification with CS was proven to reduce oxidized units on PANI film remarkably, as evidenced by both ATR-FTIR and Raman spectroscopy characterizations. Furthermore, bovine serum albumin (BSA) was used as the model protein to investigate the immobilization efficiency of biomolecules on the PANI film, comparative study using quartz crystal microbalance (QCM) showed that BSA immobilized on CS-modified PANI could be increased by at least 20% than that without CS-modified PANI in BSA solution with the concentration of 0.1-1mg/mL. The CS-modified PANI film would be significant for the immobilization and detection of biomolecules and especially promising in the application of immunosensor for ultrasensitive detection. © 2013 Published by Elsevier B.V.

  2. High Performance Infrared Plasmonic Metamaterial Absorbers and Their Applications to Thin-film Sensing

    KAUST Repository

    Yue, Weisheng

    2016-04-07

    Plasmonic metamaterial absorbers (PMAs) have attracted considerable attention for developing various sensing devices. In this work, we design, fabricate and characterize PMAs of different geometrical shapes operating in mid-infrared frequencies, and explore the applications of the PMAs as sensor for thin films. The PMAs, consisting of metal-insulator-metal stacks with patterned gold nanostructured surfaces (resonators), demonstrated high absorption efficiency (87 to 98 %) of electromagnetic waves in the infrared regime. The position and efficiency of resonance absorption are dependent on the shape of the resonators. Furthermore, the resonance wavelength of PMAs was sensitive to the thin film coated on the surface of the PMAs, which was tested using aluminum oxide (Al2O3) as the film. With increase of the Al2O3 thickness, the position of resonance absorption shifted to longer wavelengths. The dependence of the resonant wavelength on thin film thickness makes PMAs a suitable candidate as a sensor for thin films. Using this sensing strategy, PMAs have potential as a new method for thin film detection and in situ monitoring of surface reactions. © 2016 Springer Science+Business Media New York

  3. Simple and cost-effective fabrication of highly flexible, transparent superhydrophobic films with hierarchical surface design.

    Science.gov (United States)

    Kim, Tae-Hyun; Ha, Sung-Hun; Jang, Nam-Su; Kim, Jeonghyo; Kim, Ji Hoon; Park, Jong-Kweon; Lee, Deug-Woo; Lee, Jaebeom; Kim, Soo-Hyung; Kim, Jong-Man

    2015-03-11

    Optical transparency and mechanical flexibility are both of great importance for significantly expanding the applicability of superhydrophobic surfaces. Such features make it possible for functional surfaces to be applied to various glass-based products with different curvatures. In this work, we report on the simple and potentially cost-effective fabrication of highly flexible and transparent superhydrophobic films based on hierarchical surface design. The hierarchical surface morphology was easily fabricated by the simple transfer of a porous alumina membrane to the top surface of UV-imprinted polymeric micropillar arrays and subsequent chemical treatments. Through optimization of the hierarchical surface design, the resultant superhydrophobic films showed superior surface wetting properties (with a static contact angle of >170° and contact angle hysteresis of 82% at 550 nm wavelength). The superhydrophobic films were also experimentally found to be robust without significant degradation in the superhydrophobicity, even under repetitive bending and pressing for up to 2000 cycles. Finally, the practical usability of the proposed superhydorphobic films was clearly demonstrated by examining the antiwetting performance in real time while pouring water on the film and submerging the film in water.

  4. Deuterium retention and surface modifications of nanocrystalline tungsten films exposed to high-flux plasma

    Energy Technology Data Exchange (ETDEWEB)

    Hoen, M.H.J. ' t [FOM Institute DIFFER (Dutch Institute for Fundamental Energy Research), Association EURATOM-FOM, Partner in the Trilateral Euregio Cluster, 3439 MN Nieuwegein (Netherlands); Dellasega, D.; Pezzoli, A.; Passoni, M. [Politecnico di Milano, EURATOM-ENEA-CNR Association, Milano (Italy); Kleyn, A.W., E-mail: A.W.Kleijn@uva.nl [FOM Institute DIFFER (Dutch Institute for Fundamental Energy Research), Association EURATOM-FOM, Partner in the Trilateral Euregio Cluster, 3439 MN Nieuwegein (Netherlands); University of Amsterdam, Science Park 904, NL-1098 XH Amsterdam (Netherlands); Center of Interface Dynamics for Sustainability, CDCST, CAEP, Chengdu, Sichuan 610207 (China); Zeijlmans van Emmichoven, P.A. [FOM Institute DIFFER (Dutch Institute for Fundamental Energy Research), Association EURATOM-FOM, Partner in the Trilateral Euregio Cluster, 3439 MN Nieuwegein (Netherlands)

    2015-08-15

    Highlights: • The films withstand the intense plasma exposure maintaining overall integrity. • An increase of deuterium retention was observed with decreasing tungsten density. • Formation of micrometer-sized blisters as well as structures on the nanometer scale depending on the layer type. - Abstract: Deuterium retention studies are presented for nanostructured tungsten films exposed to high-flux deuterium plasmas. Thin tungsten films of ∼1 μm thickness were deposited with pulsed laser deposition (PLD) on bulk tungsten. Surface modifications were studied with scanning electron microscopy and deuterium retention with thermal desorption spectroscopy. Three types of PLD films with different densities and crystallinity were studied after exposure to deuterium plasmas. The surface temperature ranged from about 460 K at the periphery to about 520 K in the centre of the targets. The films withstand the intense plasma exposure well and maintain their overall integrity. An increase of deuterium retention is observed with decreasing tungsten density and crystallite size. We found that the filling of these thin films with deuterium is significantly faster than for pre-damaged polycrystalline tungsten. We observed formation of micrometer-sized blisters as well as structures on the nanometer scale, both depending on the layer type.

  5. Magnetic properties and high frequency characteristics of FeCoN thin films

    Directory of Open Access Journals (Sweden)

    Tae-Jong Hwang

    2016-05-01

    Full Text Available (Fe65Co35N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2. A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1∼2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

  6. Magnetic properties and high frequency characteristics of FeCoN thin films

    Science.gov (United States)

    Hwang, Tae-Jong; Lee, Joonsik; Kim, Ki Hyeon; Kim, Dong Ho

    2016-05-01

    (Fe65Co35)N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2). A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1˜2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR) signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

  7. Deposition and characterization of titanium dioxide and hafnium dioxide thin films for high dielectric applications

    Science.gov (United States)

    Yoon, Meeyoung

    The industry's demand for higher integrated circuit density and performance has forced the gate dielectric layer thickness to decrease rapidly. The use of conventional SiO2 films as gate oxide is reaching its limit due to the rapid increase in tunneling current. Therefore, a need for a high dielectric material to produce large oxide capacitance and low leakage current has emerged. Metal-oxides such as titanium dioxide (TiO2) and hafnium dioxide (HfO2) are attractive candidates for gate dielectrics due to their electrical and physical properties suitable for high dielectric applications. MOCVD of TiO2 using titanium isopropoxide (TTIP) precursor on p-type Si(100) has been studied. Insertion of a TiO x buffer layer, formed by depositing metallic Ti followed by oxidation, at the TiO2/Si interface has reduced the carbon contamination in the TiO2 film. Elemental Ti films, analyzed by in-situ AES, were found to grow according to Stranski-Krastanov mode on Si(100). Carbon-free, stoichiometric TiO2 films were successfully produced on Si(100) without any parasitic SiO2 layers at the TiO 2/Si interface. Electron-beam deposition of HfO2 films on Si(100) has also been investigated in this work. HfO2 films are formed by depositing elemental Hf on Si(100) and then oxidizing it either in O2 or O 3. XPS results reveal that with oxidation Hf(4f) peak shifts +3.45eV with 02 and +3.65eV with O3 oxidation. LEED and AFM studies show that the initially ordered crystalline Hf becomes disordered after oxidation. The thermodynamic stability of HfO2 films on Si has been studied using a unique test-bed structure of Hf/O3/Si. Post-Oxidation of Layer Deposition (POLD) has been employed to produce HfO2 films with a desired thickness. XPS results indicate that stoichiometric HfO 2 films were successfully produced using the POLD process. The investigation of the growth and thin film properties of TiO 2 and HfO2 using oxygen and ozone has laid a foundation for the application of these metal

  8. High performance solution-processed indium oxide thin-film transistors.

    Science.gov (United States)

    Kim, Hyun Sung; Byrne, Paul D; Facchetti, Antonio; Marks, Tobin J

    2008-09-24

    In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)] by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as approximately 44 cm2 V(-1) s(-1) are measured for n+-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10. This result combined with Ion/Ioff ratios of approximately 10(6) and <5 V operating voltages is encouraging for high-speed applications.In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)] by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as ~44 cm2 V(-1) s(-1) are measured for n+-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10. This result combined with Ion/Ioff ratios of approximately 10(6) and <5 V operating voltages is encouraging for high-speed applications.

  9. Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

    Science.gov (United States)

    Nomoto, Junichi; Inaba, Katsuhiko; Osada, Minoru; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

    2016-09-01

    Very thin aluminum-doped zinc oxide (AZO) films with a well-defined (0001) orientation and a surface roughness of 0.357 nm were deposited on amorphous glass substrates at a temperature of 200 °C by radio frequency magnetron sputtering, which are promising, particularly in terms of orientation evolution, surface roughness, and carrier transport, as buffer layers for the subsequent deposition of highly (0001)-oriented AZO polycrystalline films of 490 nm thickness by direct current (DC) magnetron sputtering. Sintered AZO targets with an Al2O3 content of 2.0 wt. % were used. DC magnetron sputtered AZO films on bare glass substrates showed a mixed (0001) and the others crystallographic orientation, and exhibited a high contribution of grain boundary scattering to carrier transport, resulting in reduced Hall mobility. Optimizing the thickness of the AZO buffer layers to 10 nm led to highly (0001)-oriented bulk AZO films with a marked reduction in the above contribution, resulting in AZO films with improved Hall mobility together with enhanced carrier concentration. The surface morphology and point defect density were also improved by applying the buffer layers, as shown by atomic force microscopy and Raman spectroscopy, respectively.

  10. Structure and magnetic properties of highly textured nanocrystalline Mn–Zn ferrite thin film

    Energy Technology Data Exchange (ETDEWEB)

    Joseph, Jaison, E-mail: jaisonjosephp@gmail.com [Department of Physics, Goverment College, Khandola, Goa 403107 India (India); Tangsali, R.B. [Department of Physics, Goa University, Taleigao Plateau, Goa 403206 India (India); Pillai, V.P. Mahadevan [Department of Optoelectronics, University of Kerala,Thiruvananthapuram, Kerala 695581 India (India); Choudhary, R.J.; Phase, D.M.; Ganeshan, V. [UGC-DAE-CSR Indore, Madhya Pradesh 452017 India. (India)

    2015-01-01

    Nanoparticles of Mn{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} were chemically synthesized by co-precipitating the metal ions in aqueous solutions in a suitable alkaline medium. The identified XRD peaks confirm single phase spinal formation. The nanoparticle size authentication is carried out from XRD data using Debye Scherrer equation. Thin film fabricated from this nanomaterial by pulse laser deposition technique on quartz substrate was characterized using XRD and Raman spectroscopic techniques. XRD results revealed the formation of high degree of texture in the film. AFM analysis confirms nanogranular morphology and preferred directional growth. A high deposition pressure and the use of a laser plume confined to a small area for transportation of the target species created certain level of porosity in the deposited thin film. Magnetic property measurement of this highly textured nanocrystalline Mn–Zn ferrite thin film revealed enhancement in properties, which are explained on the basis of texture and surface features originated from film growth mechanism.

  11. High critical current density YBCO films and fabrication of dc-SQUIDs

    CERN Document Server

    Kuriki, S; Kawaguchi, Y; Matsuda, M; Otowa, T

    2002-01-01

    In order to improve the sensitivity of SQUID magnetometers made of high-T sub c films, we have studied the conditions of pulsed-laser deposition of YBCO films. Among the different deposition parameters examined, extensive degassing of the vacuum chamber before and precise control of the substrate temperature during the film deposition were found effective for obtaining high critical temperature T sub c and high critical current density J sub c. It was also found that the residual-resistance ratio has a clear correlation with J sub c , indicating that it can be a good, and easy to measure, index of the film quality. Films having T sub c approx 89-90 K and J sub c >= 5x10 sup 6 A cm sup - sup 2 at 77 K were used to fabricate SQUIDs without a pickup loop. Grain-boundary junctions formed on bicrystal substrates with a 30 deg. misorientation angle exhibited I sub c R sub n values of more than 100 mu V at 77 K. The well-known scaling behaviour of the relation I sub c R sub n propor to (J sup G sup B sub c) sup 1 su...

  12. High-Efficiency Polycrystalline Thin Film Tandem Solar Cells.

    Science.gov (United States)

    Kranz, Lukas; Abate, Antonio; Feurer, Thomas; Fu, Fan; Avancini, Enrico; Löckinger, Johannes; Reinhard, Patrick; Zakeeruddin, Shaik M; Grätzel, Michael; Buecheler, Stephan; Tiwari, Ayodhya N

    2015-07-16

    A promising way to enhance the efficiency of CIGS solar cells is by combining them with perovskite solar cells in tandem devices. However, so far, such tandem devices had limited efficiency due to challenges in developing NIR-transparent perovskite top cells, which allow photons with energy below the perovskite band gap to be transmitted to the bottom cell. Here, a process for the fabrication of NIR-transparent perovskite solar cells is presented, which enables power conversion efficiencies up to 12.1% combined with an average sub-band gap transmission of 71% for photons with wavelength between 800 and 1000 nm. The combination of a NIR-transparent perovskite top cell with a CIGS bottom cell enabled a tandem device with 19.5% efficiency, which is the highest reported efficiency for a polycrystalline thin film tandem solar cell. Future developments of perovskite/CIGS tandem devices are discussed and prospects for devices with efficiency toward and above 27% are given.

  13. Preparation of high-performance optical coatings with fluoride nanoparticle films made from autoclaved sols.

    Science.gov (United States)

    Murata, Tsuyoshi; Ishizawa, Hitoshi; Motoyama, Izumi; Tanaka, Akira

    2006-03-01

    An ultralow refractive index is very advantageous when one designs antireflective coatings. We successfully obtained high-quality MgF2 thin films with ultralow refractive indices from autoclaved sols prepared from magnesium acetate and hydrofluoric acid. The MgF2 films consist of nanosized particles, and they have high laser-exposure durability at 193 nm. The reflectance of the antireflective coating with five layers, of which the top layer is formed by our method, is lower than 0.6% in the incident angle range of 0 degrees - 60 degrees at 193 nm.

  14. RADIATION HARDENED ANALOG IC FOR SENSOR

    Directory of Open Access Journals (Sweden)

    O. V. Dvornikov

    2011-01-01

    Full Text Available Problems of specialized analog integrated circuit design for sensor equipments are considered. It is offered to produce of radiation hardened analog IC on structured chips for economic efficiency at small production volume. The approach to analog IC design is described, including recommendations for choice of: types and quantities of structured chip analogue components; active and passive components; schematic decisions of analogue components with programmed parameters and small sensitivity to radiation. 

  15. Information Commons for Rice (IC4R).

    Science.gov (United States)

    Hao, Lili; Zhang, Huiyong; Zhang, Zhang; Hu, Songnian; Xue, Yu

    2016-01-04

    Rice is the most important staple food for a large part of the world's human population and also a key model organism for plant research. Here, we present Information Commons for Rice (IC4R; http://ic4r.org), a rice knowledgebase featuring adoption of an extensible and sustainable architecture that integrates multiple omics data through community-contributed modules. Each module is developed and maintained by different committed groups, deals with data collection, processing and visualization, and delivers data on-demand via web services. In the current version, IC4R incorporates a variety of rice data through multiple committed modules, including genome-wide expression profiles derived entirely from RNA-Seq data, resequencing-based genomic variations obtained from re-sequencing data of thousands of rice varieties, plant homologous genes covering multiple diverse plant species, post-translational modifications, rice-related literatures and gene annotations contributed by the rice research community. Unlike extant related databases, IC4R is designed for scalability and sustainability and thus also features collaborative integration of rice data and low costs for database update and maintenance. Future directions of IC4R include incorporation of other omics data and association of multiple omics data with agronomically important traits, dedicating to build IC4R into a valuable knowledgebase for both basic and translational researches in rice. © The Author(s) 2015. Published by Oxford University Press on behalf of Nucleic Acids Research.

  16. High index glass thin film processing for photonics and photovoltaic (PV) applications

    Science.gov (United States)

    Ogbuu, Okechukwu Anthony

    To favorably compete with fossil-fuel technology, the greatest challenge for thin film solar-cells is to improve efficiency and reduce material cost. Thickness scaling to thin film reduces material cost but affects the light absorption in the cells; therefore a concept that traps incident photons and increases its optical path length is needed to boost absorption in thin film solar cells. One approach is the integration of low symmetric gratings (LSG), using high index material, on either the front-side or backside of 30 um thin c-Si cells. In this study, Multicomponent TeO2--Bi2O 3--ZnO (TBZ) glass thin films were prepared using RF magnetron sputtering under different oxygen flow rates. The influences of oxygen flow rate on the structural and optical properties of the resulting thin films were investigated. The structural origin of the optical property variation was studied using X-ray diffraction, X-ray photoelectron spectroscopy, Raman Spectroscopy, and transmission electron microscopy. The results indicate that TBZ glass thin film is a suitable material for front side LSG material photovoltaic and photonics applications due to their amorphous nature, high refractive index (n > 2), broad band optical transparency window, low processing temperature. We developed a simple maskless method to pattern sputtered tellurite based glass thin films using unconventional agarose hydrogel mediated wet etching. Conventional wet etching process, while claiming low cost and high throughput, suffers from reproducibility and pattern fidelity issues due to the isotropic nature of wet chemical etching when applied to glasses and polymers. This method overcomes these challenges by using an agarose hydrogel stamp to mediate a conformal etching process. In our maskless method, agarose hydrogel stamps are patterned following a standard soft lithography and replica molding process from micropatterned masters and soaked in a chemical etchant. The micro-scale features on the stamp are

  17. Photochemical approach to high-barrier films for the encapsulation of flexible laminary electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Prager, L., E-mail: lutz.prager@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Helmstedt, U. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Herrnberger, H. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Kahle, O. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany); Kita, F. [AZ Electronic Materials Germany GmbH, Rheingaustraße 190-196, 65203 Wiesbaden (Germany); Münch, M. [Solarion AG, Pereser Höhe 1, Breitscheidstraße 45, 04442 Zwenkau (Germany); Pender, A.; Prager, A.; Gerlach, J.W. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Stasiak, M. [Fraunhofer-Einrichtung für Polymermaterialien und Composite PYCO, Kantstraße 55, 14513 Teltow (Germany)

    2014-11-03

    Based on results of preceding research and development, thin gas barriers were made by wet application of perhydropolysilazane solution onto polymer films and its subsequent photo-initiated conversion to dense silica layers applying vacuum ultraviolet irradiation. Compared to the state of the art, these layers were sufficiently improved and characterized by spectroscopic methods, by scanning electron microscopy and by gas permeation measurements. Water vapor transmission rates (WVTR) below 10{sup −2} g m{sup −2} d{sup −1} were achieved. In this way, single barrier films were developed and produced on a pilot plant from roll to roll, 250 mm wide, at speeds up to 10 m min{sup −1}. Two films were laminated using adhesives curable with ultraviolet (UV) light and evaluated by peel tests, gas permeation measurement and climate testing. It could be shown that the described high-barrier laminates which exhibit WVTR ≈ 5 × 10{sup −4} g m{sup −2} d{sup −1}, determined by the calcium mirror method, are suitable for encapsulation of flexible thin-film photovoltaic modules. Durability of the encapsulated modules could be verified in several climate tests including damp-heat, thermo-cycle (heating, freezing, wetting) and UV exposures which are equivalent to more than 20 years of endurance at outdoor conditions in temperate climate. In the frame of further research and technical development it seems to be possible to design a cost efficient industrial scale process for the production of encapsulation films for photovoltaic applications. - Highlights: • Dense silica barrier layers were developed by a photochemical approach. • Polymer based barrier films were laminated yielding flexible high-barrier films. • Using these laminates photovoltaic test modules were encapsulated and tested. • A durability of more than 20 years at outdoor conditions could be proved.

  18. Effects of high dose gamma irradiation on ITO thin film properties

    Energy Technology Data Exchange (ETDEWEB)

    Alyamani, A. [National Nanotechnology Center, King Abdul-Aziz City for Science and Technology (KACST), Riyadh (Saudi Arabia); Mustapha, N., E-mail: nazirmustapha@hotmail.com [Dept. of Physics, College of Sciences, Al Imam Mohammad Ibn Saud Islamic University, P.O. Box 90950, Riyadh 11623 (Saudi Arabia)

    2016-07-29

    Transparent thin-film Indium Tin Oxides (ITO) were prepared on 0.7 mm thick glass substrates using a pulsed laser deposition (PLD) process with average thickness of 150 nm. The samples were then exposed to high gamma γ radiation doses by {sup 60}Co radioisotope. The films have been irradiated by performing exposure cycles up to 250 kGy total doses at room temperature. The surface structures before and after irradiation were analysed by x-ray diffraction. Atomic Force Microscopy (AFM) was performed on all samples before and after irradiation to investigate any change in the grain sizes, and also in the roughness of the ITO surface. We investigated the influence of γ irradiation on the spectra of transmittance T, in the ultraviolet-visible-near infrared spectrum using spectrophotometer measurements. Energy band gap E{sub g} was then calculated from the optical spectra for all ITO films. It was found that the optical band gap values decreased as the radiation dose was increased. To compare the effect of the irradiation on refractive index n and extinction coefficient k properties, additional measurements were done on the ITO samples before and after gamma irradiation using an ellipsometer. The optical constants n and k increased by increasing the irradiation doses. Electrical properties such as resistivity and sheet resistance were measured using the four-point probe method. The good optical, electrical and morphological properties maintained by the ITO films even after being exposed to high gamma irradiation doses, made them very favourable to be used as anodes for solar cells and as protective coatings in space windows. - Highlights: • Indium Tin Oxide (ITO) thin films were deposited by pulsed laser deposition. • Effects of Gamma irradiation were investigated. • Changes of optical transmission and electrical properties of ITO films were studied. • Intensity of the diffraction peaks and the film's structure changed with increasing irradiation doses.

  19. Fabrication and characterization of highly transparent and conductive indium tin oxide films made with different solution-based methods

    Science.gov (United States)

    Xia, N.; Gerhardt, R. A.

    2016-11-01

    Solution-based fabrication methods can greatly reduce the cost and broaden the applications of transparent conducting oxides films, such as indium tin oxide (ITO) films. In this paper, we report on ITO films fabricated by spin coating methods on glass substrates with two different ITO sources: (1) a commercial ITO nanopowder water dispersion and (2) a sol-gel ITO solution. A simple and fast air annealing process was used to treat as-coated ITO films on a controlled temperature hot plate. Thermogravimetric analysis and x-ray diffraction showed that highly crystalline ITO films were formed after the annealing steps. The final ITO films had a good combination of optical properties and electrical properties, especially for films made from five layers of sol-gel ITO (92.66% transmittance and 8.7 × 10-3 Ω cm resistivity). The surface morphology and conducting network on the ITO films were characterized by non-contact and current atomic force microscopy. It was found that conducting paths were only partially connected for the nanoparticle ITO dispersion films, whereas the sol-gel ITO films had a more uniformly distributed conducting network on the surface. We also used the sol-gel ITO films to fabricate a simple liquid crystal display (LCD) device to demonstrate the excellent properties of our films.

  20. Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films.

    Science.gov (United States)

    Chirilă, Adrian; Buecheler, Stephan; Pianezzi, Fabian; Bloesch, Patrick; Gretener, Christina; Uhl, Alexander R; Fella, Carolin; Kranz, Lukas; Perrenoud, Julian; Seyrling, Sieghard; Verma, Rajneesh; Nishiwaki, Shiro; Romanyuk, Yaroslav E; Bilger, Gerhard; Tiwari, Ayodhya N

    2011-09-18

    Solar cells based on polycrystalline Cu(In,Ga)Se(2) absorber layers have yielded the highest conversion efficiency among all thin-film technologies, and the use of flexible polymer films as substrates offers several advantages in lowering manufacturing costs. However, given that conversion efficiency is crucial for cost-competitiveness, it is necessary to develop devices on flexible substrates that perform as well as those obtained on rigid substrates. Such comparable performance has not previously been achieved, primarily because polymer films require much lower substrate temperatures during absorber deposition, generally resulting in much lower efficiencies. Here we identify a strong composition gradient in the absorber layer as the main reason for inferior performance and show that, by adjusting it appropriately, very high efficiencies can be obtained. This implies that future manufacturing of highly efficient flexible solar cells could lower the cost of solar electricity and thus become a significant branch of the photovoltaic industry.

  1. Preparation of Hard Coating Films with High Refractive Index from Titania Nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Nam Woo; Ahn, Chi Yong; Song, Ki Chang [Konyang University, 121 Daehak-ro, Nonsan (Korea, Republic of)

    2015-12-15

    The titania (TiO{sub 2}) nanoparticles with a diameter 2-3 nm were synthesized by controlling hydrolysis of titanium tetraisopropoxide (TTIP) in acid solution. Organic-inorganic hybrid coating solutions were prepared by reacting the titania nanoparticles with 3-glycidoxypropyl trimethoxysilane (GPTMS) by the sol-gel method. The hard coating films with high refractive index were obtained by curing thermally at 120 .deg. C after spin-coating the coating solutions on the polycarbonate (PC) sheets. The coating films showed high optical transparency of 90% in the visible range and exhibited a pencil hardness of 2H. Also, the refractive index at 633 nm wavelength of coating films enhanced from 1.502 to 1.584 as the weight content of titania nanoparticles in the coating solutions increased from 4% to 25%.

  2. Rhombohedral AlPt films formed by self-propagating, high temperature synthesis.

    Energy Technology Data Exchange (ETDEWEB)

    Adams, David Price; Rodriguez, Mark Andrew; Kotula, Paul Gabriel

    2005-11-01

    High-purity AlPt thin films prepared by self-propagating, high temperature combustion synthesis show evidence for a new rhombohedral phase. Sputter deposited Al/Pt multilayers of various designs are reacted at different rates in air and in vacuum, and each form a new trigonal/hexagonal aluminide phase with unit cell parameters a = 15.571(8) {angstrom}, c = 5.304(1) {angstrom}, space group R-3 (148), and Z, the number of formula units within a unit cell, = 39. The lattice is isostructural to that of the AlPd R-3 lattice as reported by Matkovic and Schubert (Matkovic, 1977). Reacted films have a random in-plane crystallographic texture, a modest out-of-plane (001) texture, and equiaxed grains with dimensions on the order of film thickness.

  3. ICS-UNIDO - Promoting sustainable POPs disposal and remediation technologies

    Energy Technology Data Exchange (ETDEWEB)

    Zinovyev, S.; Lodolo, A.; Miertus, S. [ICS-UNIDO, Trieste (Italy)

    2004-09-15

    It is well known that a significant stock of polychlorinated hazards, including POP and PTS, has been produced and is stored nowadays or dispersed in the environment in many of Developing Countries and Countries with Economies in Transition. The obsolete industrial processes, giving rise to formation of dioxins, as well as former/current POP production/use (e.g. PCBs), coupled with uncontrolled use of polychlorinated pesticides in agriculture and improper storage of POP stockpiles have rendered vast territories in these countries highly contaminated and raised urgent issues of disposal of hazards and remediation of territories. The International Centre for Science and High Technology (ICS), www.ics.trieste.it, is an autonomous institution within the legal framework of the United Nations Industrial Development Organization (UNIDO) promoting a global programme on environmental protection, sustainable chemistry, catalysis, and clean technologies. An important part of its work programme is focused on the promotion of new technologies which can be helpful for the reduction of the formation of POPs (like dioxins and furans) in incineration processes and in obsolete technologies used in some industrial processes. Another hot issue is to promote safe technologies for the destruction of PCBs and polychlorinated pesticides. Particular efforts of ICS-UNIDO are directed towards the transfer of clean technologies to developing/transition countries. ICS-UNIDO, through its initiatives, seeks to establish a dialogue with local administrative, research, NGO, and industrial bodies in order to adopt sustainable technologies for POP disposal and management of contaminated sites.

  4. Cloning and characterization of human IC53-2, a novel CDK5 activator binding protein

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    We have identified IC53-2, a human homologue of the rat C53 gene from a human placenta cDNA library (GeneBank Accession No. AF217982). IC53-2 can bind to the CDK5 activator p35 by in vitro association assay. IC53-2 is mapped to human chromosome 17q21.31. The IC53-2 transcript is highly expressed in kidney, liver, skeletal muscle and placenta. It is abundantly expressed in SMMC-7721, C-33A, 3AO, A431and MCF-7 cancer cell lines by RT-PCR assay. Stable transfection of IC53-2 cDNA into the hepatocellularcarcinoma SMMC-7721 cell remarkably stimulates its growth in vitro. The above results indicate thatIC53-2 is a novel human gene, which may be involved in the regulation of cell proliferation.

  5. Enhanced charge transport in highly conducting PEDOT-PSS films after acid treatment

    Science.gov (United States)

    Shiva, V. Akshaya; Bhatia, Ravi; Menon, Reghu

    The high electrical conductivity, good stability, high strength, flexibility and good transparency of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS), make it useful for many applications including polymeric anodes for organic photovoltaics, light-emitting diodes, flexible electrodes, supercapacitors, electrochromic devices, field-effect transistors and antistatic-coatings. However, the electrical conductivity of PEDOT-PSS has to be increased significantly for replacement of indium tin oxide (ITO) as the transparent electrode in optoelectronic devices. The as prepared (pristine) PEDOT-PSS film prepared from the PEDOT-PSS aqueous solution usually has conductivity below 1Scm-1, remarkably lower than ITO. Significant conductivity enhancement has been observed on transparent and conductive PEDOT-PSS films after a treatment with inorganic acids. Our study investigates the charge transport in pristine and H2SO4, HNO3, HCl treated PEDOT-PSS films. We have treated the films with various concentrations of acids to probe the effect of the acid treatment on the conduction mechanism. The study includes the measurement of dc and electric field dependent conductivity of films in the temperature range of 4.2K-300K. We have also performed magneto-resistance measurements in the range of 0-5T. An enhancement by a factor of~103 has been observed in the room temperature conductivity. The detailed magneto-transport studies explain the various mechanisms for the conductivity enhancement observed.

  6. Construction of sputtering system and preparation of high temperature superconducting thin films

    CERN Document Server

    Kaynak, E

    2000-01-01

    The preparation of high T sub c superconducting thin film is important both for the understanding of fundamental behaviours of these materials and for the investigations on the usefulness of technological applications. High quality thin films can be prepared by various kinds of techniques being used today. Among these, sputtering is the most preferred one. The primary aim of this work is the construction of a r. f. and c. magnetron sputtering system. For this goal, a magnetron sputtering system was designed and constructed having powers up to 500W (r.f.) and 1KW (d.c.) that enables to deposit thin films of various kinds of materials: metals, ceramics and magnetic materials. The temperature dependence of the electrical resistance of the films was investigated by using four-point probe method. The zero resistance and the transition with of the films were measured as 80-85 K, and 2-9 K, respectively. The A.C. susceptibility experiments were done by utilising the system that was designed and constructed. The appl...

  7. Fabrication of Al-Doped ZnO Film with High Conductivity Induced by Photocatalytic Activity

    Science.gov (United States)

    Hong, Jeongsoo; Katsumata, Ken-ichi; Matsushita, Nobuhiro

    2016-10-01

    We have fabricated Al-doped ZnO films by a spin-spray method, achieving high conductivity by Al-ion doping and photocatalytic activity of the ZnO. The surface morphology of the as-deposited films was varied by changing the Al concentration and addition of citrate ions. As-deposited Al-doped ZnO film without citrate ions showed rod array structure with increasing rod width as the Al concentration was increased. Meanwhile, Al-doped ZnO film deposited with addition of citrate ions changed to exhibit dense and continuous surface morphology with high transmittance of 85%. The lowest resistivity recorded for undoped and Al-doped ZnO film was 2.1 × 10-2 Ω cm and 5.9 × 10-3 Ω cm, after ultraviolet (UV) irradiation. The reason for the decreased resistivity is thought to be that Al-ion doping and the photocatalytic activity of ZnO contributed to improve the conductivity.

  8. New co-spray way to synthesize high quality ZnS films

    Energy Technology Data Exchange (ETDEWEB)

    Bouznit, Y., E-mail: Bouznit80@gmail.com [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Beggah, Y. [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Boukerika, A. [Laser Department, Nuclear Research Centre of Algeria, Algiers 16000 (Algeria); Lahreche, A. [Science and Technology Department, University of Bejaia, Bejaia 06000 (Algeria); Ynineb, F. [Laboratory of Thin Films and Interface, University Mentouri, Constantine 25000 (Algeria)

    2013-11-01

    In the present study, we report for the first time the synthesis of ZnS films using co-spray method, in which the reactants were mixed in the vapor state contrary to that seen in previous spray configurations. In order to obtain the optimum conditions for growing high quality ZnS thin films related to this approach, a series of samples with different Zn:S atomic ratios were investigated. X-ray diffraction (XRD) analysis indicated that both solid state and phase formation were strongly dependent on Zn:S atomic ratio. In the absence of sulfur element, pure ZnO phase showing hexagonal wurtzite structure with (0 0 2) preferential orientation was obtained. When one eighth of sulfur was implicated, the (0 0 2) diffraction peak of ZnO was broadened and displaced toward lower angles. Once one quarter of sulfur was involved, no discernible diffraction peaks could be seen. Films deposited using solutions with Zn:S ratio of 1:1/2, 1:1 and 1:2 have pure ZnS phase showing hexagonal wurtzite structure with a strong preferential orientation. Near stoichiometric ZnS films were achieved with Zn:S atomic ratio close to 1:1. All films have high transmittance of about 80% in the visible region.

  9. Thin film CIGS photovoltaic modules: monolithic integration and advanced packaging for high performance, high reliability and low cost

    Science.gov (United States)

    Eldada, Louay

    2011-01-01

    In recent years, thin-film photovoltaic companies started realizing their low manufacturing cost potential, and have been grabbing an increasingly larger market share. Copper Indium Gallium Selenide (CIGS) is the most promising thin-film PV material, having demonstrated the highest energy conversion efficiency in both cells and modules. However, most CIGS manufacturers still face the challenge of delivering a reliable and rapid manufacturing process that can scale effectively and deliver on the promise of this material system. HelioVolt has developed a reactive transfer process for CIGS absorber formation that has the benefits of good compositional control, and a fast high-quality CIGS reaction. The reactive transfer process is a two stage CIGS fabrication method. Precursor films are deposited onto substrates and reusable cover plates in the first stage, while in the second stage the CIGS layer is formed by rapid heating with Se confinement. HelioVolt also developed best-in-class packaging technologies that provide unparalleled environmental stability. High quality CIGS films with large grains were fabricated on the production line, and high-performance highreliability monolithic modules with a form factor of 120 cm × 60 cm are being produced at high yield and low cost. With conversion efficiency levels around 14% for cells and 12% for modules, HelioVolt is commercializing the process on its first production line with 20 MW capacity, and is planning its next GW-scale factory.

  10. Electromigration of damascene copper of IC interconnect

    Science.gov (United States)

    Meyer, William Kevin

    Copper metallization patterned with multi-level damascene process is prone to electromigration failure, which affects the reliability and performance of IC interconnect. In typical products, interconnect that is not already constrained by I·R drop or Joule self-heating operates at 'near threshold' conditions. Measurement of electromigration damage near threshold is very difficult due to slow degradation requiring greatly extended stress times, or high currents that cause thermal anomalies. Software simulations of the electromigration mechanism combined with characterization of temperature profiles allows extracting material parameters and calculation of design rules to ensure reliable interconnect. Test structures capable of demonstrating Blech threshold effects while allowing thermal characterization were designed and processed. Electromigration stress tests at various conditions were performed to extract both shortline (threshold) and long-line (above threshold) performance values. The resistance increase time constant shows immortality below Je·L (product of current density and segment length) of 3200 amp/cm. Statistical analysis of times-to-failure show that long lines last 105 hours at 3.1 mA/mum2 (120°C). While this is more robust than aluminum interconnect, the semiconductor industry will be challenged to improve that performance as future products require.

  11. A facile self-assembled film assisted preparation of CuGaS{sub 2} ultrathin films and their high sensitivity to L-noradrenaline

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Qin; Kang, Shi-Zhao, E-mail: kangsz@sit.edu.cn; Li, Xiangqing; Qin, Lixia; Mu, Jin, E-mail: mujin@sit.edu.cn

    2016-02-15

    Graphical abstract: A dense CuGaS{sub 2} ultrathin film was prepared in an improved layer-by-layer self-assembled process following heat treatment. And, the as-prepared CuGaS{sub 2} ultrathin film possesses high sensitivity to L-noradrenaline. - Highlights: • Tetragonal CuGaS{sub 2} film was prepared in a simple process. • CuGaS{sub 2} film exhibits a narrow emission. • High sensitivity to LNE with a detection limit of 2.83 ng cm{sup −2}. - Abstract: A dense CuGaS{sub 2} ultrathin film was prepared in an improved layer-by-layer self-assembled process followed by heat treatment and characterized with X-ray diffraction, scanning electron microscopy, UV–vis spectroscopy, and fluorescence spectroscopy. Meanwhile, the application of the as-prepared CuGaS{sub 2} ultrathin film in the trace detection of L-noradrenaline was explored as a photoluminescent probe. The results show that the tetragonal phase CuGaS{sub 2} film fabricated on the glass substrate is smooth and dense. And this CuGaS{sub 2} ultrathin film can exhibit a strong emission at 829 nm with full width at half maximum of approximate 12 nm. Furthermore, the as-prepared CuGaS{sub 2} ultrathin film possesses high sensitivity to L-noradrenaline with a detectable concentration of 2.83 ng cm{sup −2} when it is used as a photoluminescent probe, implying that it is a promising candidate in the field of biological and chemical sensing in future.

  12. Multilayer Integrated Film Bulk Acoustic Resonators

    CERN Document Server

    Zhang, Yafei

    2013-01-01

    Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education’s Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang’s research group.

  13. Copper Nanoparticle/Multiwalled Carbon Nanotube Composite Films with High Electrical Conductivity and Fatigue Resistance Fabricated via Flash Light Sintering.

    Science.gov (United States)

    Hwang, Hyun-Jun; Joo, Sung-Jun; Kim, Hak-Sung

    2015-11-18

    In this work, multiwalled carbon nanotubes (MWNTs) were employed to improve the conductivity and fatigue resistance of flash light sintered copper nanoparticle (NP) ink films. The effect of CNT weight fraction on the flash light sintering and the fatigue characteristics of Cu NP/CNT composite films were investigated. The effect of carbon nanotube length was also studied with regard to enhancing the conductivity and fatigue resistance of flash light sintered Cu NP/CNT composite films. The flash light irradiation energy was optimized to obtain high conductivity Cu NP/CNT composite films. Cu NP/CNT composite films fabricated via optimized flash light irradiation had the lowest resistivity (7.86 μΩ·cm), which was only 4.6 times higher than that of bulk Cu films (1.68 μΩ·cm). It was also demonstrated that Cu NP/CNT composite films had better durability and environmental stability than those of Cu NPs only.

  14. High Refractive Organic–Inorganic Hybrid Films Prepared by Low Water Sol-Gel and UV-Irradiation Processes

    Directory of Open Access Journals (Sweden)

    Hsiao-Yuan Ma

    2016-03-01

    Full Text Available Organic-inorganic hybrid sols (Ti–O–Si precursor were first synthesized by the sol-gel method at low addition of water, and were then employed to prepare a highly refractive hybrid optical film. This film was obtained by blending the Ti–O–Si precursor with 2-phenylphenoxyethyl acrylate (OPPEA to perform photo-polymerization by ultraviolet (UV irradiation. Results show that the film transparency of poly(Ti–O–Si precursor-co-OPPEA film is higher than that of a pure poly(Ti–O–Si precursor film, and that this poly(Ti–O–Si precursor-co-OPPEA hybrid film exhibits a high transparency of ~93.7% coupled with a high refractive index (n of 1.83 corresponding to a thickness of 2.59 μm.

  15. Research on structure of Cu2ZnSn(S, Se)4 thin films with high Sn-related phases

    Science.gov (United States)

    Li, Peng-yu; Xue, Yu-ming; Liu, Hao; Xia, Dan; Song, Dian-you; Feng, Shao-jun; Sun, Hai-tao; Yu, Bing-bing; Qiao, Zai-xiang

    2016-11-01

    Cu2ZnSn(S, Se)4 (CZTSSe) thin films were deposited on flexible substrates by three evaporation processes at high temperature. The chemical compositions, microstructures and crystal phases of the CZTSSe thin films were respectively characterized by inductively coupled plasma optical emission spectrometer (ICP-OES), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman scattering spectrum. The results show that the single-step evaporation method at high temperature yields CZTSSe thin films with nearly pure phase and high Sn-related phases. The elemental ratios of Cu/(Zn+Sn)=1.00 and Zn/Sn=1.03 are close to the characteristics of stoichiometric CZTSSe. There is the smooth and uniform crystalline at the surface and large grain size at the cross section for the films, and no other phases exist in the film by XRD and Raman shift measurement. The films are no more with the Sn-related phase deficiency.

  16. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact,...

  17. Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices....

  18. Wet-spun, porous, orientational graphene hydrogel films for high-performance supercapacitor electrodes

    Science.gov (United States)

    Kou, Liang; Liu, Zheng; Huang, Tieqi; Zheng, Bingna; Tian, Zhanyuan; Deng, Zengshe; Gao, Chao

    2015-02-01

    Supercapacitors with porous electrodes of graphene macroscopic assembly are supposed to have high energy storage capacity. However, a great number of ``close pores'' in porous graphene electrodes are invalid because electrolyte ions cannot infiltrate. A quick method to prepare porous graphene electrodes with reduced ``close pores'' is essential for higher energy storage. Here we propose a wet-spinning assembly approach based on the liquid crystal behavior of graphene oxide to continuously spin orientational graphene hydrogel films with ``open pores'', which are used directly as binder-free supercapacitor electrodes. The resulting supercapacitor electrodes show better electrochemical performance than those with disordered graphene sheets. Furthermore, three reduction methods including hydrothermal treatment, hydrazine and hydroiodic acid reduction are used to evaluate the specific capacitances of the graphene hydrogel film. Hydrazine-reduced graphene hydrogel film shows the highest capacitance of 203 F g-1 at 1 A g-1 and maintains 67.1% specific capacitance (140 F g-1) at 50 A g-1. The combination of scalable wet-spinning technology and orientational structure makes graphene hydrogel films an ideal electrode material for supercapacitors.Supercapacitors with porous electrodes of graphene macroscopic assembly are supposed to have high energy storage capacity. However, a great number of ``close pores'' in porous graphene electrodes are invalid because electrolyte ions cannot infiltrate. A quick method to prepare porous graphene electrodes with reduced ``close pores'' is essential for higher energy storage. Here we propose a wet-spinning assembly approach based on the liquid crystal behavior of graphene oxide to continuously spin orientational graphene hydrogel films with ``open pores'', which are used directly as binder-free supercapacitor electrodes. The resulting supercapacitor electrodes show better electrochemical performance than those with disordered graphene

  19. Characterization of CdS Thin-Film in High Efficient CdS/CdTe Solar Cells

    Science.gov (United States)

    Tsuji, Miwa; Aramoto, Tetsuya; Ohyama, Hideaki; Hibino, Takeshi; Omura, Kuniyoshi

    2000-07-01

    Cadmium sulfide (CdS) thin films are the most commonly used window materials for high efficient cadmium telluride (CdTe) and chalcopyrite polycrystalline thin-film photovoltaic devices. High efficient CdS/CdTe solar cells with thin CdS films have been developed using ultrathin CdS films with a thickness of less than 0.1 μm. CdS films were deposited on transparent conductive oxide (TCO)/glass substrates by the metal organic chemical vapor deposition (MOCVD) technique. CdTe films were subsequently deposited by the close-spaced sublimation (CSS) technique. The screen printing and sintering method fabricated carbon and silver electrodes. Cell performance depends primarily on the electrical and optical properties of CdS films. Therefore we started to develop higher-quality CdS films and found clear differences between high- and low-quality CdS films from the analyses of scanning electron microscope (SEM), atomic force microscope (AFM), secondary ion mass spectroscopy (SIMS), thermal desorption spectrometry (TDS) and Fourier transforms-infrared spectrometry (FT-IR) measurements. As a result of controlling the quality of CdS films, a photovoltaic conversion efficiency of 10.5% has been achieved for size of 1376 cm2 of the solar cells under the Air Mass (AM) 1.5 conditions of the Japan Quality Assurance Organization.

  20. Characterization of CdS thin film in high efficient CdS/CdTe solar cells

    Science.gov (United States)

    Tsuji, Miwa; Aramoto, Tetsuya; Ohyama, Hideaki; Hibino, Takeshi; Omura, Kuniyoshi

    2000-06-01

    Cadmium sulfide (CdS) thin film is the most commonly used window material for high-efficient cadmium telluride (CdTe) thin-film photovoltaic devices. High-efficient CdS/CdTe solar cells have been developed using ultra-thin CdS films having a thickness of below 0.1 μm. CdS film is deposited on transparent conductive oxide (TCO) film coated glass substrates by the metal organic chemical vapor deposition (MOCVD) technique, CdTe film is subsequently deposited by the close-spaced sublimation (CSS) technique. Finally, carbon and Ag-In electrodes are fabricated by the screen printing and sintering method. Cell performance depends primarily on the electrical and optical properties of CdS film, and hence we started to develop higher quality CdS film and found out clear differences between high- and low-quality CdS films from various analyses: SEM, AFM, SIMS, TDS and FT-IR. As a result of controlling qualities of CdS films, photovoltaic conversion efficiency of 10.5% has been achieved for a size of 1376 cm 2 of the solar module under air mass (AM) 1.5 conditions by the Japan Quality Assurance Organization (JQA).

  1. Large-Scale Graphene Film Deposition for Monolithic Device Fabrication

    Science.gov (United States)

    Al-shurman, Khaled

    Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors. The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an urgent need for a new platform material to replace Si. Graphene is considered a promising material with enormous potential applications in many electronic and optoelectronics devices due to its superior properties. There are several techniques to produce graphene films. Among these techniques, chemical vapor deposition (CVD) offers a very convenient method to fabricate films for large-scale graphene films. Though CVD method is suitable for large area growth of graphene, the need for transferring a graphene film to silicon-based substrates is required. Furthermore, the graphene films thus achieved are, in fact, not single crystalline. Also, graphene fabrication utilizing Cu and Ni at high growth temperature contaminates the substrate that holds Si CMOS circuitry and CVD chamber as well. So, lowering the deposition temperature is another technological milestone for the successful adoption of graphene in integrated circuits fabrication. In this research, direct large-scale graphene film fabrication on silicon based platform (i.e. SiO2 and Si3N4) at low temperature was achieved. With a focus on low-temperature graphene growth, hot-filament chemical vapor deposition (HF-CVD) was utilized to synthesize graphene film using 200 nm thick nickel film. Raman spectroscopy was utilized to examine graphene formation on the bottom side of the Ni film

  2. Movable thin films with embedded high-index microspheres for super-resolution microscopy

    CERN Document Server

    Allen, Kenneth W; Li, Yangcheng; Limberopoulos, Nicholaos I; Walker, Dennis E; Urbas, Augustine M; Liberman, Vladimir; Astratov, Vasily N

    2015-01-01

    Microsphere-assisted imaging emerged as a surprisingly simple way of achieving optical super-resolution imaging. In this work, we use movable PDMS thin films with embedded high-index barium titanate glass microspheres a sample scanning capability was developed, thus removing the main limitation of this technology based on its small field-of-view.

  3. Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors

    Science.gov (United States)

    2012-02-28

    we scribed for t in film ME potential o -2 type struc c structure w ombardment oped hybrid te can be ac ia optimize hybrid depo ature, micr . BaTiO3...100) highly ized silicon tion of micr restingly, th pyramid to was incre the structur he integratio lectric heter e not only ut also crea igure 37

  4. Film-forming properties of blends of high-oleic sunflower oil with polyalkyl glycol

    Science.gov (United States)

    The viscosity, density, and elastohydrodynamic film thicknesses of oil-soluble polyalkyl glycols (PAG), high oleic sunflower oil (HOSuO), and their 50/50 (wt.) blends were investigated. The viscosity and density of the blends were found to be predictable from the corresponding neat oil properties us...

  5. High quality LaVO3 films as solar energy conversion material.

    Science.gov (United States)

    Zhang, Hai-Tian; Brahlek, Matthew J; Ji, Xiaoyu; Lei, Shiming; Lapano, Jason; Freeland, John W; Gopalan, Venkatraman; Engel-Herbert, Roman

    2017-03-21

    Mott insulating oxides and their heterostructures have recently been identified as potential photovoltaic materials with favorable absorption properties and an intrinsic built-in electric field that can efficiently separate excited electron-hole pairs. At the same time, they are predicted to overcome the Shockley-Queisser limit due to strong electron-electron interaction present. Despite these premises a high concentration of defects commonly observed in Mott insulating films acting as recombination centers can derogate the photovoltaic conversion efficiency. Utilizing the self-regulated growth kinetics in hybrid molecular beam epitaxy this obstacle can be overcome. High quality, stoichiometric LaVO3 films were grown with defect densities of in-gap states up to two orders of magnitude lower compared to the films in literature, and a factor of three lower than LaVO3 bulk single crystals. Photoconductivity measurements revealed a significant photo-responsivity increase as high as 10-fold of stoichiometric LaVO3 films compared to their nonstoichiometric counterparts. This work marks a critical step towards the realization of high performance Mott insulator solar cells beyond conventional semiconductors.

  6. Smooth Growth of Organic Semiconductor Films on Graphene for High-Efficiency Electronics

    NARCIS (Netherlands)

    Hlawacek, G.; Khokhar, F.S.; van Gastel, Raoul; Poelsema, Bene; Teichert, Christian

    2011-01-01

    High-quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron

  7. High-temperature stability of thermoelectric Ca3Co4O9 thin films

    DEFF Research Database (Denmark)

    Brinks, P.; Van Nong, Ngo; Pryds, Nini;

    2015-01-01

    An enhanced thermal stability in thermoelectric Ca3Co4O9 thin films up to 550 °C in an oxygen rich environment was demonstrated by high-temperature electrical and X-ray diffraction measurements. In contrast to generally performed heating in helium gas, it is shown that an oxygen/helium mixture...... provides sufficient thermal contact, while preventing the previously disregarded formation of oxygen vacancies. Combining thermal cycling with electrical measurements proves to be a powerful tool to study the real intrinsic thermoelectric behaviour of oxide thin films at elevated temperatures. © 2015 AIP...

  8. Ferromagnetism carried by highly delocalized hybrid states in Sc-doped ZnO thin films

    KAUST Repository

    Benali Kanoun, Mohammed

    2012-05-29

    We present first-principles results for Sc-doped ZnOthin films. Neighboring Sc atoms in the surface and/or subsurface layers are found to be coupled ferromagnetically, where only two of the possible configurations induce spin polarization. In the first configuration, the polarization is carried by the Sc d states as expected for transition metaldoping. However, there is a second configuration which is energetically favorable. It is governed by polarized hybrid states of the Zns, O p, and Sc d orbitals. Such highly delocalized states can be an important ingredient for understanding the magnetism of dopedZnOthin films.

  9. High Stability Performance of Superhydrophobic Modified Fluorinated Graphene Films on Copper Alloy Substrates

    Directory of Open Access Journals (Sweden)

    Rafik Abbas

    2017-01-01

    Full Text Available A stable self-cleaning superhydrophobic modified fluorinated graphene surface with micro/nanostructure was successfully fabricated on copper substrates via drop coating process. Irregularly stacked island-like multilayered fluorinated graphene nanoflakes comprised the microstructure. The fabricated films exhibited outstanding superhydrophobic property with a water contact angle 167° and water sliding angle lower than 4°. The developed superhydrophobic surface showed excellent corrosion resistance with insignificant decrease of water contact angle 166° in 3.5 wt.% NaCl solution. This stable highly hydrophobic performance of the fluorinated graphene films could be useful in self-cleaning, antifogging, corrosion resistive coatings and microfluidic devices.

  10. Laser drilling of vias in dielectric for high density multilayer LSHI thick film circuits

    Science.gov (United States)

    Cocca, T.; Dakesian, S.

    1977-01-01

    A design analysis of a high density multilevel thick film digital microcircuit used for large scale integration is presented. The circuit employs 4 mil lines, 4 mil spaces and requires 4 mil diameter vias. Present screened and fired thick film technology is limited on a production basis to 16 mil square vias. A process whereby 4 mil diameter vias can be fabricated in production using laser technology was described along with a process to produce 4 mil diameter vias for conductor patterns which have 4 mil lines and 4 mil spacings.

  11. High speed cine film studies of plasma behaviour and plasma surface interactions in tokamaks

    Energy Technology Data Exchange (ETDEWEB)

    Goodall, D.H.J. (Euratom/UKAEA Fusion Association, Abingdon (UK). Culham Lab.)

    High speed cine photography is a useful diagnostic aid for studying plasma behaviour and plasma surface interactions. Several workers have filmed discharges in tokamaks including ASDEX, DITE, DIVA, ISX, JFT2, TFR and PLT. These films are discussed and examples given of the observed phenomena which include plasma limiter interactions, diverted discharges, disruptions, magnetic islands and moving glowing objects often known as 'UFOs'. Examples of plasma structures in ASDEX and DITE not previously published are also given. The paper also reports experiments in DITE to determine the origin of UFOs.

  12. High stability of amorphous hafnium-indium-zinc-oxide thin film transistor

    Science.gov (United States)

    Chong, Eugene; Jo, Kyoung Chul; Lee, Sang Yeol

    2010-04-01

    Time dependence of the threshold voltage (Vth) shift in amorphous hafnium-indium-zinc oxide (a-HIZO) thin film transistor has been reported under on-current bias temperature stress measured at 60 °C. X-ray photoelectron spectroscopy results show the decrease in oxygen vacancies by Hf metal cations in a-HIZO systems after annealing process. High stability of a-HIZO systems has been observed due to low charge injection from the channel layer. Hf metal cations have been effectively incorporated into the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation.

  13. L10-Ordered Thin Films with High Perpendicular Magnetic Anisotropy for STT-MRAM Applications

    Science.gov (United States)

    Huang, Efrem Yuan-Fu

    The objective of the research conducted herein was to develop L10-ordered materials and thin film stack structures with high perpendicular magnetic anisotropy (PMA) for spin-transfertorque magnetoresistive random access memory (STT-MRAM) applications. A systematic approach was taken in this dissertation, culminating in exchange coupled L1 0-FePt and L10- MnAl heterogeneous structures showing great promise for developing perpendicular magnetic tunnel junctions (pMTJs) with both high thermal stability and low critical switching current. First, using MgO underlayers on Si substrates, sputtered MnAl films were systematically optimized, ultimately producing a Si substrate/MgO (20 nm)/MnAl (30)/Ta (5) film stack with a high degree of ordering and large PMA. Next, noting the incompatibility of insulating MgO underlayers with industrial-scale CMOS processes, attention was turned to using conductive underlayers. TiN was found to excel at promoting growth of L10-MnAl, with optimized films showing improved magnetic properties over those fabricated on MgO underlayers. The use of different post-annealing processes was then studied as an alternative to in situ annealing. Rapid thermal annealing (RTA) was found to produce PMA in films at lower annealing temperatures than tube furnace annealing, but tube furnace annealing produced films with higher maximum PMA than RTA. While annealed samples had lower surface roughness than those ordered by high in situ deposition temperatures, relying solely on annealing to achieve L10-ordering resulted drastically reduced PMA. Finally, heterogeneous L10-ordered FePt/MgO/MnAl film stacks were explored for pMTJs. Film stacks with MgO barrier layers thinner than 2 nm showed significant interdiffusion between the FePt and MnAl, while film stacks with thicker MgO barrier layers exhibited good ordering and high PMA in both the FePt and MnAl films. It is believed that this limitation is caused by the roughness of the underlying FePt, which was thicker

  14. Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films.

    Science.gov (United States)

    Huang, Chia-Cheng; Wang, Fang-Hsing; Wu, Chia-Ching; Huang, Hong-Hsin; Yang, Cheng-Fu

    2013-05-01

    In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory.

  15. A facile method for preparing highly conductive and reflective surface-silvered polyimide films

    Science.gov (United States)

    Liao, Yuan; Cao, Bing; Wang, Wen-Cai; Zhang, Liqun; Wu, Dezhen; Jin, Riguang

    2009-07-01

    A novel method was developed for the preparation of reflective and electrically conductive surface-silvered polyimide (PI) films. The polyimide films were functionalized with poly(dopamine), simply by dipping the PI films into aqueous dopamine solution and mildly stirring at room temperature. Electroless plating of silver was readily carried out on the poly(dopamine) deposited PI (PI-DOPA) surface. The surface compositions of the modified PI films were studied by X-ray photoelectron spectroscopy (XPS). XPS results show that the PI-DOPA surfaces were successfully deposited with ploy(dopamine) and were ready for electroless deposition of silver. The poly(dopamine) layer was used not only as the chemi-sorption sites for silver particles during the electroless plating of silver, but also as an adhesion promotion layer for the electrolessly deposited silver. The as-prepared silvered PI films show high conductivity and reflectivity, with a surface resistance of 1.5 Ω and a reflectivity of 95%, respectively.

  16. A facile method for preparing highly conductive and reflective surface-silvered polyimide films

    Energy Technology Data Exchange (ETDEWEB)

    Liao Yuan; Cao Bing [State Key Laboratory of Chemical Resource Engineering, and the Key Laboratory of Beijing City on Preparation and Processing of Novel Polymer Materials, Beijing University of Chemical Technology, 15 Beisanhuan East Road, Beijing 100029 (China); Wang Wencai, E-mail: wangw@mail.buct.edu.cn [State Key Laboratory of Chemical Resource Engineering, and Key Laboratory of Beijing City on Preparation and Processing of Novel Polymer Materials, Beijing University of Chemical Technology, 15 Beisanhuan East Road, Beijing 100029 (China); Zhang Liqun; Wu Dezhen; Jin Riguang [State Key Laboratory of Chemical Resource Engineering, and Key Laboratory of Beijing City on Preparation and Processing of Novel Polymer Materials, Beijing University of Chemical Technology, 15 Beisanhuan East Road, Beijing 100029 (China)

    2009-07-15

    A novel method was developed for the preparation of reflective and electrically conductive surface-silvered polyimide (PI) films. The polyimide films were functionalized with poly(dopamine), simply by dipping the PI films into aqueous dopamine solution and mildly stirring at room temperature. Electroless plating of silver was readily carried out on the poly(dopamine) deposited PI (PI-DOPA) surface. The surface compositions of the modified PI films were studied by X-ray photoelectron spectroscopy (XPS). XPS results show that the PI-DOPA surfaces were successfully deposited with ploy(dopamine) and were ready for electroless deposition of silver. The poly(dopamine) layer was used not only as the chemi-sorption sites for silver particles during the electroless plating of silver, but also as an adhesion promotion layer for the electrolessly deposited silver. The as-prepared silvered PI films show high conductivity and reflectivity, with a surface resistance of 1.5 {Omega} and a reflectivity of 95%, respectively.

  17. Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

    Science.gov (United States)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2014-10-28

    Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

  18. Growth of High TcYBaCuO Thin Films by Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    Kirlin, Peter S.; Binder, R.; Gardiner, R.; Brown, Duncan W.

    1990-03-01

    Thin films of YBa2Cu3O7-x were grown on MgO(100) by metalorganic chemical vapor deposition (MOCVD). Low pressure growth studies were carried out between 400 and 600°C using metal β-diketonate complexes as source reagents for Y, Ba, and Cu. As-deposited films were amorphous and a two stage annealing protocol was used in which fluorine was first removed in a Ar/H20 stream between 700 and 850°C, followed by calcination in flowing oxygen between 500 and 950°C. Scanning electron microscopy, X-ray diffraction and energy dispersive analysis indicate that good compositional and dimensional uniformity could be achieved. The temperature of the oxygen annealing step was shown to have a dramatic impact on the physical and electrical properties of the YBa2Cu307-x thin films. Annealing temperatures exceeding 910°C gave large crystallites and semiconducting resistivity above Tc; annealing temperatures below 910°C yielded films with metallic conductivity whose density and superconducting transition varied inversely with maximum annealing temperature. Optimized deposition/annealing protocols yielded films with a preferred c-axis orientation, R273/R100 ratios of 2, onsets as high as 94K and zero resistance exceeding 90K.

  19. High entropy alloy thin films deposited by magnetron sputtering of powder targets

    Energy Technology Data Exchange (ETDEWEB)

    Braeckman, B.R., E-mail: BertR.Braeckman@Ugent.be [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium); Boydens, F. [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium); Hidalgo, H.; Dutheil, P. [GREMI, UMR7344 CNRS, Université d' Orléans, BP6744, 45067 Orléans Cedex 2 (France); Jullien, M. [Institut Jean Lamour, Université de Lorraine, UMR CNRS, 7198 Vandoeuvre-lès-Nancy (France); Thomann, A.-L. [GREMI, UMR7344 CNRS, Université d' Orléans, BP6744, 45067 Orléans Cedex 2 (France); Depla, D. [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium)

    2015-04-01

    High entropy alloys (HEA) contain at least five principal elements in equimolar or near-equimolar ratios. These materials crystallize typically as a face-centered cubic (FCC), body-centered cubic (BCC) solid solution or as a mixture of these two crystal structures. AlCoCrCuFeNi thin films were deposited by magnetron sputtering of homemade pressed powder targets. Four targets with different compositions were sputtered under various conditions to modify the alloy composition. Scanning electron microscopy and energy-dispersive X-ray spectroscopy were used to study the surface morphology and composition whereas X-ray diffraction and X-ray reflectivity provided information regarding the phase formation and density of the films. It is suggested that, when taking into account the atomic radii of the constituent elements, the sputter deposited alloy thin films can be topologically regarded as binary alloys of the form Al-(CoCrCuFeNi). If the concentration of the largest atom (Al) increases, a transition from FCC to BCC is noticed. This structure transition could be attributed to a critical lattice distortion. - Highlights: • AlCoCrCuFeNi thin films were deposited by sputtering pressed power targets. • Sputter deposition of powder targets allows good control over the film composition. • With increasing Al fraction, a crystallographic structure transition was noticed. • The transition was made semi-quantitative with Egami's atomic-level stress theory.

  20. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Schmidt, J.A.; Arce, R.D. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2016-04-30

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  1. Nanostructured ZnO films on stainless steel are highly safe and effective for antimicrobial applications.

    Science.gov (United States)

    Shim, Kyudae; Abdellatif, Mohamed; Choi, Eunsoo; Kim, Dongkyun

    2017-04-01

    The safety and effectiveness of antimicrobial ZnO films must be established for general applications. In this study, the antimicrobial activity, skin irritation, elution behavior, and mechanical properties of nanostructured ZnO films on stainless steel were evaluated. ZnO nanoparticle (NP) and ZnO nanowall (NW) structures were prepared with different surface roughnesses, wettability, and concentrations using an RF magnetron sputtering system. The thicknesses of ZnO NP and ZnO NW were approximately 300 and 620 nm, respectively, and ZnO NW had two diffraction directions of [0002] and [01-10] based on high-resolution transmission electron microscopy. The ZnO NW structure demonstrated 99.9% antimicrobial inhibition against Escherichia coli, Staphylococcus aureus, and Penicillium funiculosum, and no skin irritation was detected using experimental rabbits. Approximately 27.2 ± 3.0 μg L(-1) Zn ions were eluted from the ZnO NW film at 100 °C for 24 h, which satisfies the WHO guidelines for drinking water quality. Furthermore, the Vickers hardness and fracture toughness of ZnO NW films on stainless steel were enhanced by 11 and 14% compared to those of the parent stainless steel. Based on these results, ZnO NW films on STS316L sheets are useful for household supplies, such as water pipes, faucets, and stainless steel containers.

  2. High-performance ferroelectric memory based on phase-separated films of polymer blends

    KAUST Repository

    Khan, Mohammad A.

    2013-10-29

    High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. High-Mobility Aligned Pentacene Films Grown by Zone-Casting

    DEFF Research Database (Denmark)

    Duffy, Claudia M.; Andreasen, Jens Wenzel; Breiby, Dag W.;

    2008-01-01

    We investigate the growth and field-effect transistor performance of aligned pentacene thin films deposited by zone-casting from a solution of unsubstituted pentacene molecules in a chlorinated solvent. Polarized optical microscopy shows that solution processed pentacene films grow as large......-of-plane 00n reflections up to at least the seventh order, and a pronounced in-plane anisotropy with the a-axis of the triclinic unit cell predominantly aligned parallel to the zone-casting direction and the ab-plane parallel to the substrate. The average charge carrier mobility of the zone-cast pentacene...... devices depends strongly on the underlying dielectric. Divinylsiloxane-bis-benzocyclobutene (BCB) resin is found to be a suitable gate dielectric allowing reproducible film deposition and high field-effect mobilities up to 0.4−0.7 cm2/(V s) and on/off ratios of 106−107. A small mobility anisotropy...

  4. Anomalously high thermoelectric power factor in epitaxial ScN thin films

    DEFF Research Database (Denmark)

    Kerdsongpanya, Sit; Van Nong, Ngo; Pryds, Nini;

    2011-01-01

    Thermoelectric properties of ScN thin films grown by reactive magnetron sputtering on Al2O3(0001) wafers are reported. X-ray diffraction and elastic recoil detection analyses show that the composition of the films is close to stoichiometry with trace amounts (∼1 at. % in total) of C, O, and F. We...... found that the ScN thin-film exhibits a rather low electrical resistivity of ∼2.94 μΩm, while its Seebeck coefficient is approximately ∼−86 μV/K at 800 K, yielding a power factor of ∼2.5 × 10−3 W/mK2. This value is anomalously high for common transition-metal nitrides. © 2011 American Institute...

  5. Highly Conductive Graphene and Polyelectrolyte Multilayer Thin Films Produced From Aqueous Suspension.

    Science.gov (United States)

    Stevens, Bart; Guin, Tyler; Sarwar, Owais; John, Alyssa; Paton, Keith R; Coleman, Jonathan N; Grunlan, Jaime C

    2016-09-27

    Rapid, large-scale exfoliation of graphene in water has expanded its potential for use outside niche applications. This work focuses on utilizing aqueous graphene dispersions to form thin films using layer-by-layer processing, which is an effective method to produce large-area coatings from water-based solutions of polyelectrolytes. When layered with polyethyleneimine, graphene flakes stabilized with cholate are shown to be capable of producing films thinner than 100 nm. High surface coverage of graphene flakes results in electrical conductivity up to 5500 S m(-1) . With the relative ease of processing, the safe, cost effective nature of the ingredients, and the scalability of the deposition method, this system should be industrially attractive for producing thin conductive films for a variety of electronic and antistatic applications.

  6. Anomalously high thermoelectric power factor in epitaxial ScN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kerdsongpanya, Sit; Zukauskaite, Agne; Jensen, Jens; Birch, Jens; Lu Jun; Hultman, Lars; Wingqvist, Gunilla; Eklund, Per [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, SE-581 83 Linkoeping (Sweden); Van Nong, Ngo; Pryds, Nini [Fuel Cells and Solid State Chemistry Division, Risoe National Laboratory for Sustainable Energy, Technical University of Denmark, DK-4000 Roskilde (Denmark)

    2011-12-05

    Thermoelectric properties of ScN thin films grown by reactive magnetron sputtering on Al{sub 2}O{sub 3}(0001) wafers are reported. X-ray diffraction and elastic recoil detection analyses show that the composition of the films is close to stoichiometry with trace amounts ({approx}1 at. % in total) of C, O, and F. We found that the ScN thin-film exhibits a rather low electrical resistivity of {approx}2.94 {mu}{Omega}m, while its Seebeck coefficient is approximately {approx}-86 {mu}V/K at 800 K, yielding a power factor of {approx}2.5 x 10{sup -3} W/mK{sup 2}. This value is anomalously high for common transition-metal nitrides.

  7. Deoxyribonucleic acid-based hybrid thin films for potential application as high energy density capacitors

    Science.gov (United States)

    Joyce, Donna M.; Venkat, Narayanan; Ouchen, Fahima; Singh, Kristi M.; Smith, Steven R.; Grabowski, Christopher A.; Terry Murray, P.; Grote, James G.

    2014-03-01

    Deoxyribonucleic acid (DNA) based hybrid films incorporating sol-gel-derived ceramics have shown strong promise as insulating dielectrics for high voltage capacitor applications. Our studies of DNA-CTMA (cetyltrimethylammonium) complex/sol-gel ceramic hybrid thin film devices have demonstrated reproducibility and stability in temperature- and frequency-dependent dielectric properties with dielectric constant k ˜ 5.0 (1 kHz), as well as reliability in DC voltage breakdown measurements, attaining values consistently in the range of 300-350 V/μm. The electrical/dielectric characteristics of DNA-CTMA films with sol-gel-derived ceramics were examined to determine the critical energy storage parameters such as voltage breakdown and dielectric constant.

  8. Multiwalled carbon nanotube/polydimethylsiloxane composite films as high performance flexible electric heating elements

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Jing; Jeong, Young Gyu, E-mail: ygjeong@cnu.ac.kr [Department of Advanced Organic Materials and Textile System Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

    2014-08-04

    High performance elastomeric electric heating elements were prepared by incorporating various contents of pristine multiwalled carbon nanotube (MWCNT) in polydimethylsiloxane (PDMS) matrix by using an efficient solution-casting and curing technique. The pristine MWCNTs were identified to be uniformly dispersed in the PDMS matrix and the electrical percolation of MWCNTs was evaluated to be at ∼0.27 wt. %, where the electrical resistivity of the MWCNT/PDMS composite films dropped remarkably. Accordingly, the composite films with higher MWCNT contents above 0.3 wt. % exhibit excellent electric heating performance in terms of temperature response rapidity and electric energy efficiency at constant applied voltages. In addition, the composite films, which were thermally stable up to 250 °C, showed excellent heating-cooling cyclic performance, which was associated with operational stability in actual electric heating applications.

  9. High- T_c superconducting thin film/GaAs MESFET hybrid microwave oscillator

    Institute of Scientific and Technical Information of China (English)

    金飚兵; 康琳; 伍瑞新; 张健羽; 程其恒; 吴培亨; 经东; 焦刚; 邵凯; 蒋明明; 张家宗; 孙敏松; 王蕴仪; 周岳亮; 吕惠宾; 许世发; 何萌; 王小平; 杨秉川; 卢剑; 张其邵

    1997-01-01

    A high- Tc superconducting (HTSC) thin film/GaAs MESFET hybrid microwave oscillator operated at 10 6 GHz has been designed, fabricated and characterized. Microstrip line structures were used throughout the circuit with superconducting thin film YBaiCuiO7 8(YBCO) as the conductor material. The YBCO thin films were deposited on 15 mm×10 mm×0. 5 mm LaAlO3 substrates. The oscillator was common-source, series feedback type using a GaAs-MESFET (NE72084) as the active device and a superconducting microstrip resonator as the frequency stabilizing element. By improving the unloaded quality factor Q0 of the superconducting microstrip resonator and adjusting the coupling coefficient between the resonator and the gate of the MESFET, the phase noise of the oscillator was decreased At 77 K, the phase noise of the oscillator at 10 kHz offset from carrier was - 87 dBc/Hz.

  10. Electrodeposited Fe{sub (100-x)}Ga{sub x} thin films with high magnetostriction

    Energy Technology Data Exchange (ETDEWEB)

    Iselt, Diana; Schultz, Ludwig [IFW Dresden, Institute for Metallic Materials, Helmholtzstr. 20, 01069 Dresden (Germany); TU Dresden, Faculty of Mechanical Engineering, 01062 Dresden (Germany); Schloerb, Heike; Faehler, Sebastian [IFW Dresden, Institute for Metallic Materials, Helmholtzstr. 20, 01069 Dresden (Germany)

    2010-07-01

    Magnetostrictive materials can be used to build up electromagnetic sensing and actuating devices. A promising candidate to overcome the mechanical limitations of Terfenol-D is Fe{sub (100-x)}Ga{sub x} with 15 to 25 at.% Ga, which shows a high mechanical strength and low saturation fields. For the application as sensors thin films, ribbons and nanowires need to be produced in a cheap way over large areas. In this study a suitable deposition process for Fe-Ga alloy thin films has been developed using electrochemical pulse plating. By optimising the deposition parameters such as electrolyte composition, deposition potential, deposition time and pulse sequences, homogeneous (110)-oriented thin films with low oxygen content have been prepared. Preliminary investigations of magnetic properties correlated to magnetostriction are presented and discussed in sense of shape anisotropy.

  11. Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

    Science.gov (United States)

    Kim, Dae-Hwan; Jeong, Hwan-Seok; Kwon, Hyuck-In

    2017-03-01

    We investigate the effects of water absorption on the electrical performance and stability in high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs). The ZnON TFT exhibits a smaller field-effect mobility, lower turn-on voltage, and higher subthreshold slope with a deteriorated electrical stability under positive gate bias stresses after being exposed to water. From the Hall measurements, an increase of the electron concentration and a decrease of the Hall mobility are observed in the ZnON thin film after water absorption. The observed phenomena are mainly attributed to the water molecule-induced increase of the defective ZnXNY bond and the oxygen vacancy inside the ZnON thin film based on the x-ray photoelectron spectroscopy analysis.

  12. Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C1s and N 1s spectra shift to lower binding energy due to the formation of C-Si and N-Si bonds. The Si-C-N bonds were observed in the deconvolved C1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).

  13. Highly Directional Emission from a Subwavelength Slit in Metal-Dielectric Layered Films

    Institute of Scientific and Technical Information of China (English)

    LI Zu-Bin; TIAN Jian-Guo; ZHOU Wen-Yuan; LIU Zhi-Bo; ZANG Wei-Ping; ZHANG Chun-Ping

    2006-01-01

    @@ The directional light emission from a single subwavelength slit surrounded by periodic grooves in layered films consisting of Ag and transparent dielectric is analysed numerically by the finite difference time domain method.The results show that the transmission through this structure is strongly confined by the modulation of the dielectric film with grooves on the output side. The role of evanescent waves in this phenomenon is discussed.It is the re-diffraction of the evanescent waves (that are generated by the diffraction of the subwavelength slit)caused by the grooves on the dielectric film that leads to the directional transmission. Some suggestions are given to obtain beaming light with high transmittance.

  14. Atomization off thin water films generated by high-frequency substrate wave vibrations.

    Science.gov (United States)

    Collins, David J; Manor, Ofer; Winkler, Andreas; Schmidt, Hagen; Friend, James R; Yeo, Leslie Y

    2012-11-01

    Generating aerosol droplets via the atomization of thin aqueous films with high frequency surface acoustic waves (SAWs) offers several advantages over existing nebulization methods, particularly for pulmonary drug delivery, offering droplet sizes in the 1-5-μm range ideal for effective pulmonary therapy. Nevertheless, the physics underlying SAW atomization is not well understood, especially in the context of thin liquid film formation and spreading and how this affects the aerosol production. Here, we demonstrate that the film geometry, governed primarily by the applied power and frequency of the SAW, indeed plays a crucial role in the atomization process and, in particular, the size of the atomized droplets. In contrast to the continuous spreading of low surface energy liquids atop similar platforms, high surface energy liquids such as water, in the present case, are found to undergo transient spreading due to the SAW to form a quasisteady film whose height is determined by self-selection of the energy minimum state associated with the acoustic resonance in the film and whose length arises from a competition between acoustic streaming and capillary effects. This is elucidated from a fundamental model for the thin film spreading behavior under SAW excitation, from which we show good agreement between the experimentally measured and theoretically predicted droplet dimension, both of which consistently indicate a linear relationship between the droplet diameter and the mechanical power coupled into the liquid by the SAW (the latter captured by an acoustic Weber number to the two thirds power, and the reciprocal of the SAW frequency).

  15. Electronic properties of high-temperature superconducting thin films grown by pulsed laser deposition

    Science.gov (United States)

    Abrecht, M.; Ariosa, Daniel; Cloetta, D.; Margaritondo, Giorgio; Pavuna, Davor

    2002-11-01

    We use a pulsed laser deposition (PLD) setup to grow ultra-thin films of high temperature superconductors (HTSC) and transfer them in-situ into a photoemission chamber. Photoemission measurements on such films allow us to study non-cleavable materials, but can also give insights into aspects never measured before, like the influence of strain on the low energy electronic structure. Systematic studies of many different materials grown as films showed that Bi2Sr2CaCu2O8+x, Bi2Sr2Cu1O6+x, Bi2Sr2Ca2Cu3O10+x and La2-xSrxCuO4 films exhibit a conductor-like Fermi edge, but materials containing chains (such as YBa2Cu3O7-x) are prone to very rapid surface degradation, possibly related to critical oxygen loss at the surface. Among HTSC materials, La2-xSrxCuO4 is extremely interesting because of its rather simple structure and the fact that its critical temperature Tc can be enhanced by epitaxial strain. Here we present our first high resolution angular resolved photoemission spectroscopy (ARPES) results on 8 unit-cell thin La2-xSrxCuO4 films on SrLaAlO4 [001] substrates. Due to the lattice mismatch, such films are compressed in the copper oxygen planes and expanded in the c-axis direction. Results show a surprisingly modified Fermi surface compared to the one of non-strained samples.

  16. High-Rate Vapor Deposition of Cadmium Telluride Films for Solar Cells

    Science.gov (United States)

    Khan, Nasim Akhter

    1992-01-01

    High rate vapor deposition is presently used for large scale low cost deposition of thin films for packaging and other applications. The feasibility of using this technology for low cost deposition of solar cells was explored. After an exhaustive literature survey, the cadmium telluride (CdTe) solar cell was found to be most suitable candidate for high rate vapor deposition. The high rate vapor deposition was investigated by sublimation with a short distance between sublimation source and the substrate (Close-Spaced Sublimation, CSS). Cadmium telluride (CdTe) solar cells were fabricated by depositing CdTe films at different rates on cadmium sulphide (CdS) films deposited by CSS or by evaporation. The CdTe films deposited at higher deposition rates were observed to have open circuit voltages (V_{ rm oc}) comparable to those deposited at lower rates. The effect of CdS film which acts as window layer for the cells were also investigated on the V_ {rm oc} of the solar cells. The results achieved proved the fact that CdS window layer is necessary to achieve higher V_{ rm oc} from solar cells. The substrate temperature during deposition of films by close space sublimation plays a vital role in the performance of solar cell. The increase in the substrate temperature during deposition of CdTe films increased the V_{rm oc} of solar cells. The solar cells with indium tin oxide (ITO) as top conductor, i.e. ITO/CdS/CdTe configuration were fabricated at rates up to 34 mum/minute and with tin oxide (TO) i.e. TO/CdTe configuration fabricated at rates up to 79 mum/minute have shown similar V_{rm oc} compared to those produced at lower rates. Higher CdTe film deposition rates are possible with larger capacity experimental setup. The method of contacting CdTe, used in this study, results in higher series resistance. An improved method of contacting CdTe needs to be developed.

  17. Optimizing amorphous indium zinc oxide film growth for low residual stress and high electrical conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mukesh [Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401 (United States); Sigdel, A.K. [Department of Physics and Astronomy, University of Denver, Denver, CO 80208 (United States); National Center for Photovoltaics, National Renewal Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401 (United States); Gennett, T.; Berry, J.J.; Perkins, J.D.; Ginley, D.S. [National Center for Photovoltaics, National Renewal Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401 (United States); Packard, C.E., E-mail: cpackard@mines.edu [Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401 (United States); National Center for Photovoltaics, National Renewal Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401 (United States)

    2013-10-15

    With recent advances in flexible electronics, there is a growing need for transparent conductors with optimum conductivity tailored to the application and nearly zero residual stress to ensure mechanical reliability. Within amorphous transparent conducting oxide (TCO) systems, a variety of sputter growth parameters have been shown to separately impact film stress and optoelectronic properties due to the complex nature of the deposition process. We apply a statistical design of experiments (DOE) approach to identify growth parameter–material property relationships in amorphous indium zinc oxide (a-IZO) thin films and observed large, compressive residual stresses in films grown under conditions typically used for the deposition of highly conductive samples. Power, growth pressure, oxygen partial pressure, and RF power ratio (RF/(RF + DC)) were varied according to a full-factorial test matrix and each film was characterized. The resulting regression model and analysis of variance (ANOVA) revealed significant contributions to the residual stress from individual growth parameters as well as interactions of different growth parameters, but no conditions were found within the initial growth space that simultaneously produced low residual stress and high electrical conductivity. Extrapolation of the model results to lower oxygen partial pressures, combined with prior knowledge of conductivity–growth parameter relationships in the IZO system, allowed the selection of two promising growth conditions that were both empirically verified to achieve nearly zero residual stress and electrical conductivities >1480 S/cm. This work shows that a-IZO can be simultaneously optimized for high conductivity and low residual stress.

  18. Microfabricated Thin-Film Inductors for High-Frequency DC-DC Power Conversion

    Science.gov (United States)

    Yao, Di

    2011-12-01

    Microfabricated V-groove inductors targeted to operate above 10 MHz are investigated. Multilayer nano-granular Co-Zr-O/ZrO2 magnetic thin films are used as the core material of the inductors to improve the magnetic performance of the films deposited on the sidewalls of V-grooves and to control eddy-current loss in the core, which goes up very quickly as frequency increases. A loss model is developed to estimate eddy-current loss in multilayer magnetic thin films considering the effect of displacement current at high frequencies, and the model is applied in the design of V-groove inductors. V-groove inductors using multilayer magnetic thin films are co-optimized with power MOSFETs for 7-V to 3.3-V, 1-A DC-DC buck converters to maximize power handling capability per unit substrate area for given efficiencies. Prototype V-groove inductors are fabricated based on the optimization results, and measured and predicted performance of the inductors match well. The prototype inductors are a promising candidate for high-power-density high-efficiency DC-DC converters. The 7-V to 3.3-V, 1-A converters using prototype V-groove inductors are expected to exhibit power density of 2.5 W/mm2 and efficiency of 86% at 100 MHz, and power density of 0.36 W/mm2 and efficiency of 91% at 11 MHz.

  19. Gate-tunable electron interaction in high-κ dielectric films

    Science.gov (United States)

    Kondovych, Svitlana; Luk’Yanchuk, Igor; Baturina, Tatyana I.; Vinokur, Valerii M.

    2017-02-01

    The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-κ) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films. We find that by reducing the distance from the gate to the film, we decrease the spatial range of the 2D long-range logarithmic interaction, changing it to predominantly dipolar or even to exponential one at lateral distances exceeding the dimension of the film-gate separation. Our findings offer a unique laboratory for the in-depth study of topological phase transitions and related phenomena that range from criticality of quantum metal- and superconductor-insulator transitions to the effects of charge-trapping and Coulomb scalability in memory nanodevices.

  20. High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films

    Directory of Open Access Journals (Sweden)

    Miguel Muñoz Rojo

    2015-08-01

    Full Text Available The out of plane electrical conductivity of highly anisotropic Bi2Te3 films grown via electro-deposition process was determined using four probe current-voltage measurements performed on 4.6 - 7.2 μm thickness Bi2Te3 mesa structures with 80 - 120 μm diameters sandwiched between metallic film electrodes. A three-dimensional finite element model was used to predict the electric field distribution in the measured structures and take into account the non-uniform distribution of the current in the electrodes in the vicinity of the probes. The finite-element modeling shows that significant errors could arise in the measured film electrical conductivity if simpler one-dimensional models are employed. A high electrical conductivity of (3.2 ± 0.4 ⋅ 105 S/m is reported along the out of plane direction for Bi2Te3 films highly oriented in the [1 1 0] direction.

  1. Thick-Film and LTCC Passive Components for High-Temperature Electronics

    Directory of Open Access Journals (Sweden)

    A. Dziedzic

    2013-04-01

    Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

  2. High-loading Fe2O3/SWNT composite films for lithium-ion battery applications

    Science.gov (United States)

    Wang, Ying; Guo, Jiahui; Li, Li; Ge, Yali; Li, Baojun; Zhang, Yingjiu; Shang, Yuanyuan; Cao, Anyuan

    2017-08-01

    Single-walled carbon nanotube (SWNT) films are a potential candidate as porous conductive electrodes for energy conversion and storage; tailoring the loading and distribution of active materials grafted on SWNTs is critical for achieving maximum performance. Here, we show that as-synthesized SWNT samples containing residual Fe catalyst can be directly converted to Fe2O3/SWNT composite films by thermal annealing in air. The mass loading of Fe2O3 nanoparticles is tunable from 63 wt% up to 96 wt%, depending on the annealing temperature (from 450 °C to 600 °C), while maintaining the porous network structure. Interconnected SWNT networks containing high-loading active oxides lead to synergistic effect as an anode material for lithium ion batteries. The performance is improved consistently with increasing Fe2O3 loading. As a result, our Fe2O3/SWNT composite films exhibit a high reversible capacity (1007.1 mA h g-1 at a current density of 200 mA g-1), excellent rate capability (384.9 mA h g-1 at 5 A g-1) and stable cycling performance with the discharge capacity up to 567.1 mA h g-1 after 600 cycles at 2 A g-1. The high-loading Fe2O3/SWNT composite films have potential applications as nanostructured electrodes for various energy devices such as supercapacitors and Li-ion batteries.

  3. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  4. Deposition of highly (111)-oriented PZT thin films by using metal organic chemical deposition

    CERN Document Server

    Bu, K H; Choi, D K; Seong, W K; Kim, J D

    1999-01-01

    Lead zirconate titanate (PZT) thin films have been grown on Pt/Ta/SiNx/Si substrates by using metal organic chemical vapor deposition with Pb(C sub 2 H sub 5) sub 4 , Zr(O-t-C sub 4 H sub 9) sub 4 , and Ti(O-i-C sub 3 H sub 7) sub 4 as source materials and O sub 2 as an oxidizing gas. The Zr fraction in the thin films was controlled by varying the flow rate of the Zr source material. The crystal structure and the electrical properties were investigated as functions of the composition. X-ray diffraction analysis showed that at a certain range of Zr fraction, highly (111)-oriented PZT thin films with no pyrochlore phases were deposited. On the other hand, at low Zr fractions, there were peaks from Pb-oxide phases. At high Zr fractions, peaks from pyrochlore phase were seen. The films also showed good electrical properties, such as a high dielectric constant of more than 1200 and a low coercive voltage of 1.35 V.

  5. High quality electrodeposited Fe{sub 100-x}Ga{sub x} films for magnetostrictive applications

    Energy Technology Data Exchange (ETDEWEB)

    Iselt, Diana; Schultz, Ludwig [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, 01171 Dresden (Germany); TU Dresden, Faculty of Mechanical Engineering, 01062 Dresden (Germany); Schloerb, Heike; Faehler, Sebastian [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, 01171 Dresden (Germany)

    2011-07-01

    Magnetostrictive materials can be used to build electromagnetic sensing and actuating devices. A promising candidate to overcome the mechanical limitations of Terfenol-D is Fe{sub 100-x}Ga{sub x} with 15 to 25 at.% Ga, which exhibits high mechanical strength and low saturation fields. For sensor application an efficient, scalable preparation way is required for thin film and nanowire fabrication. In this study FeGa alloy films with a desired composition close to Fe{sub 80}Ga{sub 20} have been fabricated electrochemically on Pt substrates. For a conventional deposition at constant potentials strong interactions of the electrolyte with the platinum coated substrate are identified to cause low reproducibility and high oxygen content. The use of optimised pre-treatment and pulsed potential conditions resulted in dense and homogeneous films with a (110) {alpha}-Fe{sub 3}Ga fibre texture. Oxygen content was reduced below 1 at.% and the saturation magnetization reaches up to 1.7 T, confirming the high quality of these films. In order to understand the influence of the substrate on morphology and oxygen content deposition on gold and copper coated substrates have been carried out.

  6. Preparation of Vanadium Dioxide Films for Protection from High-energy Laser Hits

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Vanadium dioxide(VO2)thin films are used for protection from high-energy laser hits due to their semiconductor-to-metal phase transition experienced during heating at temperature of approximately 68℃,which followed by a abrupt change of optical behavior, namely from transparent semiconductor state below 68℃ to highly reflective metallic state beyond 68℃.The preparation and properties of the films are described as well as the primary principle of the device for protection from high energy laser hits. An ion-beam-sputtering system is used to deposit VO2 thin films.The technique is reactive ion beam sputtering of vanadium at temperature of 200℃ on Si, Ge and Si3N4 substrates in a well controlled atmosphere of argon with a partial pressure of O2, followed by a post annealing at 400-550℃ with argon gas.The optical transmittance changes from 60% to 4% are obtained within the temperature range from 50℃ to 70℃. X-ray diffraction (XRD) shows that the films are of single-phase VO2.

  7. Novel wide band gap materials for highly efficient thin film tandem solar cells. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Hardin, Brian E.; Connor, Stephen T.; Peters, Craig H.

    2012-06-11

    Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949 mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV's goal in Phase I of the DOE SBIR was to (1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and (2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS

  8. Growth of oblique sputtered Co and CoCrPt thin films for high-density tape recording

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, L.T. [System and Materials for Information Storage Group, MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Tichelaar, F.D. [Faculty of Applied Sciences, National Center for High Resolution Electron Microscopy, Kavli Institute of Nanoscience, Technical University of Delf, Rotterdamseweg 137, 2628Al Delf (Netherlands); Lodder, J.C. [System and Materials for Information Storage Group, MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)]. E-mail: j.c.lodder@el.utwente.nl

    2005-04-15

    In this paper, we report the properties of Co/Cr and CoCrPt/CoCrMn thin films grown by oblique sputtering onto polymer substrates. It is observed that in both cases, the underlayers promote the formation of HCP-structure of the magnetic layers, which results in a high magnetic anisotropy of the films consequently, high coercivities of 200 and 300 kA/m are obtained in the 20 nm Co/180 nm Cr and 30 nm CoCrPt/50 nm CoCrMn films, respectively. However, in the case of Co/Cr film, Co grains are relatively large and elongated following the transverse direction while in the case of CoCrPt/CoCrMn film, a tiny columnar structure inclined toward the incident direction is observed. This fact results in a different magnetic behavior of these films.

  9. The Selection of the Phone Charging IC

    Institute of Scientific and Technical Information of China (English)

    Jian ming Lei

    2013-01-01

    An expensive digital IC is used in old battery only charger (BOC) and this IC needs separate software. For simplify the design and reduce the cost, we find the existing analogy charging ICs and select the most popular four from them, including Mitsumi, Freescale, TI and Analogic Tech, we make a detailed comparison and select the best one, based on this IC’s feature and our requirements, A detailed design evaluation is presented, including the design of the input over voltage protection (OVP), output OVP and over temperature protection (OTP), the WCA (Worse Case Analysis) of this OTP. After the improvement, this new BOC has lower cost, simpler topology, more efficient power consumption.

  10. Challenges in IC design for hearing aids

    DEFF Research Database (Denmark)

    Jørgensen, Ivan Harald Holger

    2012-01-01

    Designing modern hearing aids is a formidable challenge. The size of hearing aids is constantly decreasing, making them virtually invisible today. Still, as in all other modern electronics, more and more features are added to these devices driven by the development in modern IC technology....... The demands for performance and features at very low supply voltage and power consumption constantly prove a challenge to the physical design of hearing aids and not at least the design of the ICs for these. As a result of this all large hearing aid manufacturers use fully customized ASICs in their products....... The size of the amplifier is critical for the size of the final hearing aid and a study of the size of these for different manufactures will be presented. Designing the ICs for hearing aids poses many challenges and is a constant compromise between size, power consumption and performance of the individual...

  11. Zeolite-loaded poly(dimethylsiloxane) hybrid films for highly efficient thin-film microextraction of organic volatiles in water.

    Science.gov (United States)

    Wang, Tao; Ansai, Toshihiro; Lee, Seung-Woo

    2017-01-15

    ZSM-5 zeolite-loaded poly(dimethylsiloxane) (PDMS) hybrid thin films were demonstrated for efficient thin-film microextraction (TFME) coupled with gas chromatography-mass spectrometry for analyzing organic volatiles in water. The extraction efficiency for a series of aliphatic alcohols and two aromatic compounds was significantly improved owing to the presence of ZSM-5 zeolites. The extraction efficiency of the hybrid films was increased in proportion to the content of ZSM-5 in the PDMS film, with 20wt% of ZSM-5 showing the best results. The 20wt% ZSM-5/PDMS hybrid film exhibited higher volatile organic content extraction compared with the single-component PDMS film or PDMS hybrid films containing other types of zeolite (e.g., SAPO-34). Limits of detection and limits of quantitation for individual analytes were in the range of 0.0034-0.049ppb and of 0.010-0.15 ppb, respectively. The effects of experimental parameters such as extraction time and temperature were optimized, and the molecular dispersion of the zeolites in/on the hybrid film matrix was confirmed with scanning electron microscopy and atomic force microscopy. Furthermore, the optimized hybrid film was preliminarily tested for the analysis of organic volatiles contained in commercially available soft drinks.

  12. Magnetic properties of electroplated nano/microgranular NiFe thin films for rf application

    NARCIS (Netherlands)

    Zhuang, Y.; Vroubel, M.; Rejaei, B.; Burghartz, J.N.; Attenborough, K.

    2005-01-01

    A granular NiFe thin film with large in-plane magnetic anisotropy and high ferromagnetic-resonance frequency developed for radio-frequency integrated circuit (IC) applications is presented. During the deposition, three-dimensional (3D) growth occurs, yielding NiFe grains (ϕ ∼ 1.0 μm). Nanonuclei (ϕ

  13. Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

    KAUST Repository

    Yue, Wan

    2016-09-28

    Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

  14. Demonstration of large field effect in topological insulator films via a high-κ back gate

    Science.gov (United States)

    Wang, C. Y.; Lin, H. Y.; Yang, S. R.; Chen, K. H. M.; Lin, Y. H.; Chen, K. H.; Young, L. B.; Cheng, C. K.; Fanchiang, Y. T.; Tseng, S. C.; Hong, M.; Kwo, J.

    2016-05-01

    The spintronics applications long anticipated for topological insulators (TIs) has been hampered due to the presence of high density intrinsic defects in the bulk states. In this work we demonstrate the back-gating effect on TIs by integrating Bi2Se3 films 6-10 quintuple layer (QL) thick with amorphous high-κ oxides of Al2O3 and Y2O3. Large gating effect of tuning the Fermi level EF to very close to the band gap was observed, with an applied bias of an order of magnitude smaller than those of the SiO2 back gate, and the modulation of film resistance can reach as high as 1200%. The dependence of the gating effect on the TI film thickness was investigated, and ΔN2D/ΔVg varies with TI film thickness as ˜t-0.75. To enhance the gating effect, a Y2O3 layer thickness 4 nm was inserted into Al2O3 gate stack to increase the total κ value to 13.2. A 1.4 times stronger gating effect is observed, and the increment of induced carrier numbers is in good agreement with additional charges accumulated in the higher κ oxides. Moreover, we have reduced the intrinsic carrier concentration in the TI film by doping Te to Bi2Se3 to form Bi2TexSe1-x. The observation of a mixed state of ambipolar field that both electrons and holes are present indicates that we have tuned the EF very close to the Dirac Point. These results have demonstrated that our capability of gating TIs with high-κ back gate to pave the way to spin devices of tunable EF for dissipationless spintronics based on well-established semiconductor technology.

  15. Challenges in IC design for hearing aids

    DEFF Research Database (Denmark)

    Jørgensen, Ivan Harald Holger

    2012-01-01

    Designing modern hearing aids is a formidable challenge. The size of hearing aids is constantly decreasing, making them virtually invisible today. Still, as in all other modern electronics, more and more features are added to these devices driven by the development in modern IC technology....... The demands for performance and features at very low supply voltage and power consumption constantly prove a challenge to the physical design of hearing aids and not at least the design of the ICs for these. As a result of this all large hearing aid manufacturers use fully customized ASICs in their products...

  16. Mismatch and noise in modern IC processes

    CERN Document Server

    Marshall, Andrew

    2009-01-01

    Component variability, mismatch, and various noise effects are major contributors to design limitations in most modern IC processes. Mismatch and Noise in Modern IC Processes examines these related effects and how they affect the building block circuits of modern integrated circuits, from the perspective of a circuit designer.Variability usually refers to a large scale variation that can occur on a wafer to wafer and lot to lot basis, and over long distances on a wafer. This phenomenon is well understood and the effects of variability are included in most integrated circuit design with the use

  17. Differences between IC Analysis and TG Approach

    Institute of Scientific and Technical Information of China (English)

    张美玲

    2014-01-01

    Structuralism and generative approach are two representative syntax theories, which study language from different per-spectives. They employ different methodologies i.e. Immediate constituent (IC) Analysis and transformational-generative (TG) approach to make syntactical analysis. In this paper, these two methods will be applied to analyze some sentences for further dis-cussion and comparison. After analysis by examples, we find that both these two methods have their merits and inadequacies. To some extent, TG method can help IC analysis solve some problems. However, TG grammar is by no means complete and perfect. Improvements are needed to reach its ultimate goal of producing a universal grammar for all human languages.

  18. Abundances of Planetary Nebulae IC 418, IC 2165 and NGC 5882

    NARCIS (Netherlands)

    Pottasch, [No Value; Bernard-Salas, J; Beintema, DA; Feibelman, WA

    2004-01-01

    The ISO and IUE spectra of the elliptical nebulae NGC 5882, IC 418 and IC 2165 are presented. These spectra are combined with the spectra in the visual wavelength region to obtain a complete, extinction corrected, spectrum. The chemical composition of the nebulae is then calculated and compared to p

  19. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs.

  20. Fabrication of high infrared reflective Al-doped ZnO thin films through electropulsing treatment for solar control

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Dagang, E-mail: chinesemdg@163.com; Hu, Huawen; Gan, Lu

    2015-08-05

    Highlights: • Rapid electropulsing treatment (EPT) was applied on AZO thin films. • AZO film presented electrical resistivity of 9.03 × 10{sup −4} Ω cm after 4.5 min of EPT. • AZO film presented high infrared reflection rate of 80–85% after 4.5 min of EPT. • The prepared AZO film can be used as solar control film. - Abstract: In this study, Al-doped ZnO (AZO) thin films were finished by low-energy consumed electropulsing treatment (EPT) in a short time. The EPT effect on the resulting AZO films was investigated by X-ray Diffraction (XRD), Hall Effect measurement, UV–visible transmittance spectra, Scanning Electron Microscope (SEM), Atomic Force Microscopy (AFM) and Fourier Transform Infrared Spectroscopy. As compared with the other EPT-treated AZO films, the prepared AZO films corresponding to 4.5 min EPT exhibited higher degree of crystallization, higher visible transmittance with blue shift, smoother surface, lower electrical resistivity of 9.03 × 10{sup −4} Ω cm, and higher infrared reflection rate of 80–85%. By the 4.5 min of EPT, the electrical conductivity of the resulting AZO thin film was increased by approximately 82.3%. Moreover, it was also found that prolonged EPT would degrade the film properties. These results indicate that the fast and low-energy consumed EPT might be a promising substitution for traditional heat annealing, and the prepared high infrared reflective AZO films make them promising candidates for being applied as solar control films.

  1. High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high- pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 /s at a high pressure. The Voc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 /s.

  2. Hierarchical graphene-polyaniline nanocomposite films for high-performance flexible electronic gas sensors

    Science.gov (United States)

    Guo, Yunlong; Wang, Ting; Chen, Fanhong; Sun, Xiaoming; Li, Xiaofeng; Yu, Zhongzhen; Wan, Pengbo; Chen, Xiaodong

    2016-06-01

    A hierarchically nanostructured graphene-polyaniline composite film is developed and assembled for a flexible, transparent electronic gas sensor to be integrated into wearable and foldable electronic devices. The hierarchical nanocomposite film is obtained via aniline polymerization in reduced graphene oxide (rGO) solution and simultaneous deposition on flexible PET substrate. The PANI nanoparticles (PPANI) anchored onto rGO surfaces (PPANI/rGO) and the PANI nanofiber (FPANI) are successfully interconnected and deposited onto flexible PET substrates to form hierarchical nanocomposite (PPANI/rGO-FPANI) network films. The assembled flexible, transparent electronic gas sensor exhibits high sensing performance towards NH3 gas concentrations ranging from 100 ppb to 100 ppm, reliable transparency (90.3% at 550 nm) for the PPANI/rGO-FPANI film (6 h sample), fast response/recovery time (36 s/18 s), and robust flexibility without an obvious performance decrease after 1000 bending/extending cycles. The excellent sensing performance could probably be ascribed to the synergetic effects and the relatively high surface area (47.896 m2 g-1) of the PPANI/rGO-FPANI network films, the efficient artificial neural network sensing channels, and the effectively exposed active surfaces. It is expected to hold great promise for developing flexible, cost-effective, and highly sensitive electronic sensors with real-time analysis to be potentially integrated into wearable flexible electronics.A hierarchically nanostructured graphene-polyaniline composite film is developed and assembled for a flexible, transparent electronic gas sensor to be integrated into wearable and foldable electronic devices. The hierarchical nanocomposite film is obtained via aniline polymerization in reduced graphene oxide (rGO) solution and simultaneous deposition on flexible PET substrate. The PANI nanoparticles (PPANI) anchored onto rGO surfaces (PPANI/rGO) and the PANI nanofiber (FPANI) are successfully

  3. High-frequency SAW filters based on diamond films.

    Science.gov (United States)

    Fujii, Satoshi; Jian, Chunyun

    2012-12-01

    We have developed a diamond SAW resonator capable of operating at frequencies over 3 GHz using a SiO(2)/ interdigital transducer (IDT)/AlN/diamond structure. This structure is expected to have a high Q value and a zero temperature coefficient of frequency (TCF) over 3 GHz, based on the high acoustic velocity of AlN. The SAW characteristics of various layered structures composed of SiO(2)/IDT/AlN/diamond substrates were studied both theoretically and experimentally. The SiO(2)/IDT/AlN/diamond substrate structure allows for a thicker IDT metal layer compared with other SAW device designs, such as the SiO(2)/IDT/ZnO/diamond structure. The thicker metal IDT in the present design leads to a lower series resistance and, in turn, a low insertion loss for SAW devices over 3 GHz. Using a second-mode (Sezawa-mode) SAW, the phase velocity and electromechanical coupling coefficient of the SiO(2)/IDT/AlN/diamond substrate reached the larger values of 11 150 m/s and 0.5%, respectively, and a zero TCF characteristic at 25°C was achieved. One-port SAW resonators fabricated from diamond substrates showed a high Q of 660 at 5.4 GHz. The frequency drift over a temperature range of -25°C to 80°C was about 90 ppm, even less than that for ST-quartz SAW substrates. A two-port resonator showed a low insertion loss of 8 dB at 5.4 GHz. Finally, we designed a 5-GHz band-stop SAW filter. A 30-MHz-wide stopband at a -6-dB rejection level was achieved while keeping the passband insertion loss to 0.76 dB. These characteristics of these filters show good potential for SHF-band filters.

  4. Characterization of CBD grown ZnO films with high c-axis orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kahraman, S., E-mail: suleymanmku@gmail.com [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey); Bayansal, F.; Cetinkara, H.A.; Cakmak, H.M.; Gueder, H.S. [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey)

    2012-06-15

    Highly c-axis oriented ZnO films were deposited on seeded glass substrates. Successive ionic layer adsorption and reaction (SILAR) method and chemical bath deposition (CBD) method were used to obtain seed layers and ZnO films. To see the effects of seed layer and deposition time, structural (e.g. grain size, microstrain and dislocation density), morphological, and electrical (e.g. resistivity, activation energy) properties of the films were investigated by scanning electron microscopy, X-ray diffraction, and four point probe method. From the SEM images, resultant structures were found as well defined nanorods nearly perpendicular to the substrate surfaces and densely cover the substrates. The XRD patterns showed that ZnO films have hexagonal wurtzite structure with a preferred c-axis orientation along (002) plane. C-axis orientation was also supported by texture coefficient calculations. The lattice parameters of the structures were determined as a = 3.2268 A, b = 5.2745 A, {alpha} = {beta} = 90 Degree-Sign and {gamma} = 120 Degree-Sign . From the XRD patterns, it was revealed that, microstrain and dislocation density values of the structures decreased whereas grain size increased. This was attributed to enhancement occurred in lattice structure of the ZnO films. Activation energy values of the films were found in between 0.12 and 0.15 eV from the dark electrical resistivity-temperature characteristics in a temperature range of 300-500 K. - Highlights: Black-Right-Pointing-Pointer Hexagonal wurtzite structured ZnO nanorods (preferred orientation along (002) plane). Black-Right-Pointing-Pointer Electrical activation energies were calculated in between 0.12 and 0.15 eV. Black-Right-Pointing-Pointer Microstrain and dislocation density decreased with increasing deposition time. Black-Right-Pointing-Pointer Increasing deposition time was resulted in an increase in preferred orientation.

  5. Orientation and thickness dependence of magnetization at the interfacesof highly spin-polarized manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chopdekar, Rajesh V.; Arenholz, Elke; Suzuki, Y.

    2008-08-18

    We have probed the nature of magnetism at the surface of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films. The spin polarization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films is not intrinsically suppressed at all surfaces and interfaces but is highly sensitive to both the epitaxial strain state as well as the substrate orientation. Through the use of soft x-ray spectroscopy, the magnetic properties of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces have been investigated and compared to bulk magnetometry and resistivity measurements. The magnetization of (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces are more bulk-like as a function of thickness whereas the magnetization at the (001)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interface is suppressed significantly below a layer thickness of 20 nm. Such findings are correlated with the biaxial strain state of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films; for a given film thickness it is the tetragonal distortion of (001) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} that severely impacts the magnetization, whereas the trigonal distortion for (111)-oriented films and monoclinic distortion for (110)-oriented films have less of an impact. These observations provide evidence that surface magnetization and thus spin polarization depends strongly on the crystal surface orientation as well as epitaxial strain.

  6. Development of high damage threshold multilayer thin film beam combiner for laser application

    Science.gov (United States)

    Nand, Mangla; Babita, Jena, S.; Tokas, R. B.; Rajput, P.; Mukharjee, C.; Thakur, S.; Jha, S. N.; Sahoo, N. K.

    2016-05-01

    A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm2 at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

  7. A simple two-step method to fabricate highly transparent ITO/polymer nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Haitao [State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China); Zeng, Xiaofei, E-mail: zengxf@mail.buct.edu.cn [State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China); Kong, Xiangrong [State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China); Bian, Shuguang [The High Technology Research and Development Center, The Ministry of Science and Technology, Beijing 100044 (China); Chen, Jianfeng [Research Center of the Ministry of Education for High Gravity Engineering and Technology, Beijing University of Chemical Technology, Beijing 100029 (China)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer A simple two-step method without further surface modification step was employed. Black-Right-Pointing-Pointer ITO nanoparticles were easily to be uniformly dispersed in polymer matrix. Black-Right-Pointing-Pointer ITO/polymer nanocomposite film had high transparency and UV/IR blocking properties. - Abstract: Transparent functional indium tin oxide (ITO)/polymer nanocomposite films were fabricated via a simple approach with two steps. Firstly, the functional monodisperse ITO nanoparticles were synthesized via a facile nonaqueous solvothermal method using bifunctional chemical agent (N-methyl-pyrrolidone, NMP) as the reaction solvent and surface modifier. Secondly, the ITO/acrylics polyurethane (PUA) nanocomposite films were fabricated by a simple sol-solution mixing method without any further surface modification step as often employed traditionally. Flower-like ITO nanoclusters with about 45 nm in diameter were mono-dispersed in ethyl acetate and each nanocluster was assembled by nearly spherical nanoparticles with primary size of 7-9 nm in diameter. The ITO nanoclusters exhibited an excellent dispersibility in polymer matrix of PUA, remaining their original size without any further agglomeration. When the loading content of ITO nanoclusters reached to 5 wt%, the transparent functional nanocomposite film featured a high transparency more than 85% in the visible light region (at 550 nm), meanwhile cutting off near-infrared radiation about 50% at 1500 nm and blocking UV ray about 45% at 350 nm. It could be potential for transparent functional coating materials applications.

  8. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

    Directory of Open Access Journals (Sweden)

    Suk In Park

    2015-01-01

    Full Text Available We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

  9. Unintentional carbide formation evidenced during high-vacuum magnetron sputtering of transition metal nitride thin films

    Science.gov (United States)

    Greczynski, G.; Mráz, S.; Hultman, L.; Schneider, J. M.

    2016-11-01

    Carbide signatures are ubiquitous in the surface analyses of industrially sputter-deposited transition metal nitride thin films grown with carbon-less source materials in typical high-vacuum systems. We use high-energy-resolution photoelectron spectroscopy to reveal details of carbon temporal chemical state evolution, from carbide formed during film growth to adventitious carbon adsorbed upon contact with air. Using in-situ grown Al capping layers that protect the as-deposited transition metal nitride surfaces from oxidation, it is shown that the carbide forms during film growth rather than as a result of post deposition atmosphere exposure. The XPS signature of carbides is masked by the presence of adventitious carbon contamination, appearing as soon as samples are exposed to atmosphere, and eventually disappears after one week-long storage in lab atmosphere. The concentration of carbon assigned to carbide species varies from 0.28 at% for ZrN sample, to 0.25 and 0.11 at% for TiN and HfN, respectively. These findings are relevant for numerous applications, as unintentionally formed impurity phases may dramatically alter catalytic activity, charge transport and mechanical properties by offsetting the onset of thermally-induced phase transitions. Therefore, the chemical state of C impurities in PVD-grown films should be carefully investigated.

  10. Fabrication and Characterization of High-Crystalline Nanoporous ZnO Thin Films by Modified Thermal Evaporation System

    Science.gov (United States)

    Islam, M. S.; Hossain, M. F.; Razzak, S. M. A.; Haque, M. M.; Saha, D. K.

    2016-05-01

    The aim of this work is to fabricate high-crystalline nanoporous zinc oxide (ZnO) thin films by a modified thermal evaporation system. First, zinc thin films have been deposited on bare glass substrate by the modified thermal evaporation system with pressure of 0.05mbar, source-substrate distance of 3cm and source temperature 700∘C. Then, high-crystalline ZnO thin film is obtained by annealing at 500∘C for 2h in atmosphere. The prepared ZnO films are characterized with various deposition times of 10min and 20min. The structural property was investigated by X-ray diffractometer (XRD). The optical bandgap and absorbance/transmittance of these films are examined by ultraviolet/visible spectrophotometer. The surface morphological property has been observed by scanning electron microscope (SEM). ZnO films have showed uniform nanoporous surface with high-crystalline hexagonal wurtzite structure. The ZnO films prepared with 20min has excitation absorption-edge at 369nm, which is blueshifted with respect to the bulk absorption-edge appearing at 380nm. The gap energy of ZnO film is decreased from 3.14eV to 3.09eV with increase of the deposition time, which can enhance the excitation of ZnO films by the near visible light, and is suitable for the application of photocatalyst of waste water cleaning and polluted air purification.

  11. Novel texturing method for sputtered zinc oxide films prepared at high deposition rate from ceramic tube targets

    Directory of Open Access Journals (Sweden)

    Hüpkes J.

    2011-10-01

    Full Text Available Sputtered and wet-chemically texture etched zinc oxide (ZnO films on glass substrates are regularly applied as transparent front contact in silicon based thin film solar cells. In this study, chemical wet etching in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl on aluminum doped zinc oxide (ZnO:Al films deposited by magnetron sputtering from ceramic tube targets at high discharge power (~10 kW/m target length is investigated. Films with thickness of around 800 nm were etched in diluted HCl acid and HF acid to achieve rough surface textures. It is found that the etching of the films in both etchants leads to different surface textures. A two steps etching process, which is especially favorable for films prepared at high deposition rate, was systematically studied. By etching first in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl these films are furnished with a surface texture which is characterized by craters with typical diameter of around 500 − 1000 nm. The resulting surface structure is comparable to etched films sputtered at low deposition rate, which had been demonstrated to be able to achieve high efficiencies in silicon thin film solar cells.

  12. Highly conductive and transparent PEDOT:PSS films with a fluorosurfactant for stretchable and flexible transparent electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Vosgueritchian, Michael; Lipomi, Darren J.; Bao, Zhenan [Department of Chemical Engineering, Stanford University, CA (United States)

    2012-01-25

    Highly conductive and transparent poly-(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) films, incorporating a fluorosurfactant as an additive, have been prepared for stretchable and transparent electrodes. The fluorosurfactant-treated PEDOT:PSS films show a 35% improvement in sheet resistance (R{sub s}) compared to untreated films. In addition, the fluorosurfactant renders PEDOT:PSS solutions amenable for deposition on hydrophobic surfaces, including pre-deposited, annealed films of PEDOT:PSS (enabling the deposition of thick, highly conductive, multilayer films) and stretchable poly(dimethylsiloxane) (PDMS) substrates (enabling stretchable electronics). Four-layer PEDOT:PSS films have an R{sub s} of 46 {omega} per square with 82% transmittance (at 550 nm). These films, deposited on a pre-strained PDMS substrate and buckled, are shown to be reversibly stretchable, with no change to R{sub s}, during the course of over 5000 cycles of 0 to 10% strain. Using the multilayer PEDOT:PSS films as anodes, indium tin oxide (ITO)-free organic photovoltaics are prepared and shown to have power conversion efficiencies comparable to that of devices with ITO as the anode. These results show that these highly conductive PEDOT:PSS films can not only be used as transparent electrodes in novel devices (where ITO cannot be used), such as stretchable OPVs, but also have the potential to replace ITO in conventional devices. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Reduced graphene oxide film based highly responsive infrared detector

    Science.gov (United States)

    Khan, Mustaque A.; Nanda, Karuna K.; Krupanidhi, Saluru B.

    2017-08-01

    Due to the unique optical properties, graphene can effectively be used for the detection of infrared light. In this regard, reduced graphene oxide (RGO) has drawn considerable attention in scientific society because of simplicity of preparation and tunable properties. Here, we report the synthesis of RGO by solvothermal reduction of graphene oxide (GO) in ethanol and the detection of infrared light (1064 and 1550 nm) with metal—RGO—metal configuration. We have observed that photocurrent, responsivity as well as the external quantum efficiency increase with C/O ratio. The responsivity value in near-infrared region can be as high as 1.34 A · W-1 and the external quantum efficiency is more than 100%. Response times of these devices are in the order of few seconds. Overall, the responsivity of our device is found to be better than many of the already reported values where graphene or reduced graphene oxide is the only active material. The high value of quantum efficiency is due to strong light absorption and the presence of mid-gap states band in RGOs.

  14. Fabrication of ordered NiO coated Si nanowire array films as electrodes for a high performance lithium ion battery.

    Science.gov (United States)

    Qiu, M C; Yang, L W; Qi, X; Li, Jun; Zhong, J X

    2010-12-01

    Highly ordered NiO coated Si nanowire array films are fabricated as electrodes for a high performance lithium ion battery via depositing Ni on electroless-etched Si nanowires and subsequently annealing. The structures and morphologies of as-prepared films are characterized by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. When the potential window versus lithium was controlled, the coated NiO can be selected to be electrochemically active to store and release Li+ ions, while highly conductive crystalline Si cores function as nothing more than a stable mechanical support and an efficient electrical conducting pathway. The hybrid nanowire array films exhibit superior cyclic stability and reversible capacity compared to that of NiO nanostructured films. Owing to the ease of large-scale fabrication and superior electrochemical performance, these hybrid nanowire array films will be promising anode materials for high performance lithium-ion batteries.

  15. THE LATEST ERUPTION OF PLANETARY NEBULA IC 2165

    Directory of Open Access Journals (Sweden)

    J. Bohigas

    2013-01-01

    Full Text Available Open slit high dispersion spectroscopic observations of the inner region of planetary nebula (PN IC 2165 indicate that the object has a relatively uniform and high electron temperature, with its density being much larger close to the PN nucleus. Abundances imply that it is a non-type I PN. Calcium and iron have been heavily depleted into grains. The ionized mass is at least ∼0.05 M⊙ . A photoionization model (Cloudy, version 10.00 assuming an inverse square law for the density and abundances typical of a non-type I PN, produced a fair replica of the spectrum and of all electron density and temperature sensitive line ratios, but not of the global properties of this object. All evidence indicates that IC 2165 was produced by a metal poor 2 M⊙ A5 V star that took off some 2 × 109 yr ago.

  16. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    Energy Technology Data Exchange (ETDEWEB)

    Doan, T.C.; Majety, S.; Grenadier, S.; Li, J.; Lin, J.Y.; Jiang, H.X., E-mail: hx.jiang@ttu.edu

    2015-05-21

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for {sup 10}B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10{sup −7} cm{sup 2}/V for electrons and holes, which is comparable to the value of about 10{sup −7} cm{sup 2}/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products.

  17. Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K., E-mail: kkr1365@yahoo.co [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India); Muruganantham, G.; Sakthivel, B. [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India)

    2009-11-15

    Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO{sub 2}:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl{sub 2} precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08x10{sup 14} lines/m{sup 2}) when compared with that of the undoped film (13.2x10{sup 14} lines/m{sup 2}), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 OMEGA/square) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl{sub 2} precursor (without using methanol or ethanol).

  18. Rare-metal-free high-performance Ga-Sn-O thin film transistor

    Science.gov (United States)

    Matsuda, Tokiyoshi; Umeda, Kenta; Kato, Yuta; Nishimoto, Daiki; Furuta, Mamoru; Kimura, Mutsumi

    2017-03-01

    Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A high field effect mobility of 25.6 cm2/Vs was achieved, because the orbital structure of Sn was similar to that of In. The stability of the GTO TFTs was examined under bias, temperature, and light illumination conditions. The electrical behaviour of the GTO TFTs was more stable than that of In-Ga-Zn-O (IGZO) TFTs, which was attributed to the elimination of weak Zn-O bonds.

  19. Nanoimprint lithography for green water-repellent film derived from biomass with high-light transparency

    Science.gov (United States)

    Takei, Satoshi; Hanabata, Makoto

    2015-03-01

    Newly eco-friendly high light transparency film with plant-based materials was investigated to future development of liquid crystal displays and optical devices with water repellency as a chemical design concept of nanoimprint lithography. This procedure is proven to be suitable for material design and the process conditions of ultraviolet curing nanoimprint lithography for green water-repellent film derived from biomass with high-light transparency. The developed formulation of advanced nanoimprinted materials design derived from lactulose and psicose, and the development of suitable UV nanoimprint conditions produced high resolutions of the conical shaped moth-eye regularly-nanostructure less than approximately 200 nm diameter, and acceptable patterning dimensional accuracy by the replication of 100 times of UV nanoimprint lithography cycles. The newly plant-based materials and the process conditions are expected as one of the defect less nanoimprint lithographic technologies in next generation electronic devices.

  20. High deposition rate processes for the fabrication of microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Michard, S. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Meier, M., E-mail: ma.meier@fz-juelich.de [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Grootoonk, B.; Astakhov, O.; Gordijn, A.; Finger, F. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany)

    2013-05-15

    The increase of deposition rate of microcrystalline silicon absorber layers is an essential point for cost reduction in the mass production of thin-film silicon solar cells. In this work we explored a broad range of plasma enhanced chemical vapor deposition (PECVD) parameters in order to increase the deposition rate of intrinsic microcrystalline silicon layers keeping the industrial relevant material quality standards. We combined plasma excitation frequencies in the VHF band with the high pressure high power depletion regime using new deposition facilities and achieved deposition rates as high as 2.8 nm/s. The material quality evaluated from photosensitivity and electron spin resonance measurements is similar to standard microcrystalline silicon deposited at low growth rates. The influence of the deposition power and the deposition pressure on the electrical and structural film properties was investigated.

  1. Free-standing high quality factor thin-film lithium niobate micro-photonic disk resonators

    CERN Document Server

    Wang, Renyuan

    2014-01-01

    Lithium Niobate (LN or just niobate) thin-film micro-photonic resonators have promising prospects in many applications including high efficiency electro-optic modulators, optomechanics and nonlinear optics. This paper presents free-standing thin-film lithium niobate photonic resonators on a silicon platform using MEMS fabrication technology. We fabricated a 35um radius niobate disk resonator that exhibits high intrinsic optical quality factor (Q) of 484,000. Exploiting the optomechanical interaction from the released free-standing structure and high optical Q, we were able to demonstrate acousto-optic modulation from these devices by exciting a 56MHz radial breathing mechanical mode (mechanical Q of 2700) using a probe.

  2. High-Tc and high-Jc SmFeAs(O,F) films on fluoride substrates grown by molecular beam epitaxy

    Science.gov (United States)

    Ueda, Shinya; Takeda, Soichiro; Takano, Shiro; Yamamoto, Akiyasu; Naito, Michio

    2011-12-01

    Superconducting thin films of SmFeAs(O,F) were prepared by molecular beam epitaxy on fluoride substrates. In our process, F-free SmFeAsO films were grown first, and F was subsequently introduced to the films by diffusion from an overlayer of SmF3. By this simple process, record high Tc, namely, Tcon (Tcend) = 57.8 K (56.4 K) was obtained in a film on CaF2. Furthermore, the films on CaF2 showed high critical current density over 1 MA/cm2 in the self-field at 5 K. The correlation between superconductivity and epitaxial strain in SmFeAs(O,F) films is discussed.

  3. High-T{sub c} and high-J{sub c} SmFeAs(O,F) films on fluoride substrates grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ueda, Shinya; Takeda, Soichiro; Takano, Shiro; Naito, Michio [Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588 (Japan); TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075 (Japan); Yamamoto, Akiyasu [Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2011-12-05

    Superconducting thin films of SmFeAs(O,F) were prepared by molecular beam epitaxy on fluoride substrates. In our process, F-free SmFeAsO films were grown first, and F was subsequently introduced to the films by diffusion from an overlayer of SmF{sub 3}. By this simple process, record high T{sub c}, namely, T{sub c}{sup on} (T{sub c}{sup end}) = 57.8 K (56.4 K) was obtained in a film on CaF{sub 2}. Furthermore, the films on CaF{sub 2} showed high critical current density over 1 MA/cm{sup 2} in the self-field at 5 K. The correlation between superconductivity and epitaxial strain in SmFeAs(O,F) films is discussed.

  4. Development of New Electrode System for High Field Dielectric Properties Measurement Using Evaporated Polypropylene Thin Guard Film

    Science.gov (United States)

    Fujii, Masayuki; Tohyama, Kazuyuki; Tokoro, Tetsuro; Mizuno, Yukio; Nagao, Masayuki; Kosaki, Masamitsu

    Non-polar polymers such as polyethylene (PE) and polypropylene (PP) are widely used as very important electrical insulating and dielectric materials. They are used in the increasingly high AC electric field strength region approaching to the limit of electrical breakdown strength of the materials. Therefore the study of high-field dielectric property is very important in terms of understanding the AC breakdown mechanism of materials. A three-terminals electrode system with a guard film (new type electrode system) was developed in our laboratory for the precise measurement of high-field tanδ, where the guard film was used to reduce the disturbance of electric field around the edge of a main electrode. However, minute air sometimes steals between a sample film and the guard film. The air sometimes generates partial discharge in the high electric field region. Therefore, when the sample had minute air, the new type electrode system was limited under 100kVrms/mm application that didn't reach to an intrinsic breakdown strength of the 30μm-thick sample. We tried to improve the new electrode system without minute air between a sample film and the guard film. We also tried to make very thin guard film to reduce the field disturbance at the edge of main electrode. In this paper a PP-guard film on a biaxially oriented polypropylene (BOPP) film was made by evaporation. This improvement of the electrode system using the evaporated PP-guard film was in success so that high-field dielectric properties of BOPP film could be measured up to near the intrinsic breakdown field of the sample.

  5. Analog IC Design at the University of Twente

    OpenAIRE

    2007-01-01

    This article describes some recent research results from the IC Design group of the University of Twente, located in Enschede, The Netherlands. Our research focuses on analog CMOS circuit design with emphasis on high frequency and broadband circuits. With the trend of system integration in mind, we try to develop new circuit techniques that enable the next steps in system integration in nanometer CMOS technology. Our research funding comes from industry, as well as from governmental organizat...

  6. Highly hydrophilic ultra-high molecular weight polyethylene powder and film prepared by radiation grafting of acrylic acid

    Science.gov (United States)

    Wang, Honglong.; Xu, Lu.; Li, Rong.; Pang, Lijuan.; Hu, Jiangtao.; Wang, Mouhua.; Wu, Guozhong.

    2016-09-01

    The surface properties of ultra-high molecular weight polyethylene (UHMWPE) are very important for its use in engineering or composites. In this work, hydrophilic UHMWPE powder and film were prepared by γ-ray pre-irradiation grafting of acrylic acid (AA) and further neutralization with sodium hydroxide solution. Variations in the chemical structure, grafting yield and hydrophilicity were investigated and compared. FT-IR and XPS analysis results showed that AA was successfully grafted onto UHMWPE powder and film; the powder was more suitable for the grafting reaction in 1 wt% AA solution than the film. Given a dose of 300 kGy, the grafting yield of AA was ∼5.7% for the powder but ∼0.8% for the film under identical conditions. Radiation grafting of a small amount of AA significantly improved the hydrophilicity of UHMWPE. The water contact angle of the UHMWPE-g-PAA powder with a grafting yield of AA at ∼5.7% decreased from 110.2° to 68.2°. Moreover, the grafting powder (UHMWPE-g-PAA) exhibited good dispersion ability in water.

  7. Characterization of Thick and Thin Film SiCN for Pressure Sensing at High Temperatures

    Directory of Open Access Journals (Sweden)

    Rama B. Bhat

    2010-02-01

    Full Text Available Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA, thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40–60 µm and thick (about 2–3 mm films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated.

  8. Characterization of Thick and Thin Film SiCN for Pressure Sensing at High Temperatures

    Science.gov (United States)

    Leo, Alfin; Andronenko, Sergey; Stiharu, Ion; Bhat, Rama B.

    2010-01-01

    Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA), thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40–60 μm) and thick (about 2–3 mm) films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated. PMID:22205871

  9. Generating Analog IC Layouts with LAYGEN II

    CERN Document Server

    Martins, Ricardo M F; Horta, Nuno C G

    2013-01-01

    This book presents an innovative methodology for the automatic generation of analog integrated circuits (ICs) layout, based on template descriptions and on evolutionary computational techniques. A design automation tool, LAYGEN II, was implemented to validate the proposed approach giving special emphasis to reusability of expert design knowledge and to efficiency on retargeting operations.

  10. Reflection High-Energy Electron Diffraction Beam-Induced Structural and Property Changes on WO3 Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Du, Yingge; Zhang, Hongliang; Varga, Tamas; Chambers, Scott A.

    2014-08-08

    Reduction of transition metal oxides can greatly change their physical and chemical properties. Using deposition of WO3 as a case study, we demonstrate that reflection high-energy electron diffraction (RHEED), a surface-sensitive tool widely used to monitor thin-film deposition processes, can significantly affect the cation valence and physical properties of the films through electron-beam induced sample reduction. The RHEED beam is found to increase film smoothness during epitaxial growth of WO3, as well as change the electronic properties of the film through preferential removal of surface oxygen.

  11. The Adhesion Improvement of Cubic Boron Nitride Film on High Speed Steel Substrate Implanted by Boron Element

    Institute of Scientific and Technical Information of China (English)

    CAI Zhi-hai; ZHANG Ping; TAN Jun

    2005-01-01

    Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the in ternal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.

  12. Condition for unity absorption in an ultrathin and highly lossy film in a Gires-Tournois interferometer configuration.

    Science.gov (United States)

    Park, Junghyun; Kim, Soo Jin; Brongersma, Mark L

    2015-05-01

    We present a condition for unity absorption for a Gires-Tournois interferometer configuration constructed from an ultrathin and highly lossy film on top of metallic mirror. From the impedance matching condition in the transmission line theory, we identify a solution space for the required complex refractive index of the lossy film in various film thickness and dielectric constants of the metallic mirror. It is shown that strong absorption requires the imaginary part of the refractive index of the ultrathin lossy film be larger than 0.64, and the physical origin of this condition is elucidated. The proposed method is useful in identifying candidate semiconductor materials that can be used as the lossy film in a unity-absorption Gires-Tournois interferometer configuration and designing the thickness of this film to maximize absorption.

  13. Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

    Science.gov (United States)

    Yu, Ying; Zhan, Qingfeng; Wei, Jinwu; Wang, Jianbo; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Xie, Shuhong; Wang, Baomin; Li, Run-Wei

    2015-04-01

    Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

  14. Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ying [Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China); Zhan, Qingfeng, E-mail: zhanqf@nimte.ac.cn, E-mail: runweili@nimte.ac.cn; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Wang, Baomin; Li, Run-Wei, E-mail: zhanqf@nimte.ac.cn, E-mail: runweili@nimte.ac.cn [Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wei, Jinwu; Wang, Jianbo [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Xie, Shuhong [Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

    2015-04-20

    Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

  15. Film Layer Structure and Wear Resistance on High Strength Room Temperature Blackening of Cu-Se-P System

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yu-feng; ZHOU Hou-qiang; WANG Jian-cheng

    2004-01-01

    In this paper,the high strength room temperature blackening film on steel surface were prepared, the structure and the forming principle of the film were studied. The Cu-Se-P system with high strength composition blackening was researched, and the factors that affect the wear resistance of the film were analyzed. The experiment shows that the procedure have many advantages, such as short treatment time, high efficiency, low cost, high adhesive strength, perfect wear resistance, which posed a new approach for blackening of machine parts.

  16. High strength, flexible and transparent nanofibrillated cellulose-nanoclay biohybrid films with tunable oxygen and water vapor permeability.

    Science.gov (United States)

    Aulin, Christian; Salazar-Alvarez, German; Lindström, Tom

    2012-10-21

    A novel, technically and economically benign procedure to combine vermiculite nanoplatelets with nanocellulose fibre dispersions into functional biohybrid films is presented. Nanocellulose fibres of 20 nm diameters and several micrometers in length are mixed with high aspect ratio exfoliated vermiculite nanoplatelets through high-pressure homogenization. The resulting hybrid films obtained after solvent evaporation are stiff (tensile modulus of 17.3 GPa), strong (strength up to 257 MPa), and transparent. Scanning electron microscopy (SEM) shows that the hybrid films consist of stratified nacre-like layers with a homogenous distribution of nanoplatelets within the nanocellulose matrix. The oxygen barrier properties of the biohybrid films outperform commercial packaging materials and pure nanocellulose films showing an oxygen permeability of 0.07 cm(3) μm m(-2) d(-1) kPa(-1) at 50% relative humidity. The oxygen permeability of the hybrid films can be tuned by adjusting the composition of the films. Furthermore, the water vapor barrier properties of the biohybrid films were also significantly improved by the addition of nanoclay. The unique combination of excellent oxygen barrier behavior and optical transparency suggests the potential of these biohybrid materials as an alternative in flexible packaging of oxygen sensitive devices such as thin-film transistors or organic light-emitting diode displays, gas storage applications and as barrier coatings/laminations in large volume packaging applications.

  17. Structure and magnetic properties of tetragonal Heusler D022-Mn3Ge compound epitaxial films with high perpendicular magnetic anisotropy

    Science.gov (United States)

    Sugihara, A.; Suzuki, K.; Mizukami, S.; Miyazaki, T.

    2015-04-01

    We investigated the structure and magnetic properties of epitaxial films of D022-Mn3Ge tetragonal Heusler like compounds in detail. Epitaxial films with a stoichiometric composition were grown on Cr-buffered single crystalline (0 0 1) MgO substrates using ultra-high vacuum sputtering at different growth temperatures. X-ray diffraction showed that D022-ordered films were formed at growth temperatures of ⩾200 °C. Epitaxial growth was indicated by cross-sectional high-resolution transmission electron microscopy. Nanobeam diffraction patterns from the D022-Mn3Ge film grown at 400 °C suggests the absence of planar defects such as stacking faults and twins in the film. Out-of-plane magnetic hysteresis curves with perfect squareness were observed for the films grown at ⩾300 °C. These films also showed abrupt magnetization reversal at a coercivity of about 1 T, which is higher than that of other thin film materials with perpendicular magnetic anisotropy such as CoPt and FePt. A huge domain diameter in the D022-Mn3Ge films was indicated by the initial magnetization curves that were measured by the polar magneto-optical Kerr effect.

  18. TDR method for determine IC's parameters

    Science.gov (United States)

    Timoshenkov, V.; Rodionov, D.; Khlybov, A.

    2016-12-01

    Frequency domain simulation is a widely used approach for determine integrated circuits parameters. This approach can be found in most of software tools used in IC industry. Time domain simulation approach shows intensive usage last years due to some advantages. In particular it applicable for analysis of nonlinear and nonstationary systems where frequency domain is inapplicable. Resolution of time domain systems allow see heterogeneities on distance 1mm, determine it parameters and properties. Authors used approach based on detecting reflected signals from heterogeneities - time domain reflectometry (TDR). Field effect transistor technology scaling up to 30-60nm gate length and 10nm gate dielectric, heterojunction bi-polar transistors with 10-30nm base width allows fabricate digital IC's with 20GHz clock frequency and RF-IC's with tens GHz bandwidth. Such devices and operation speed suppose transit signal by use microwave lines. There are local heterogeneities can be found inside of the signal path due to connections between different parts of signal lines (stripe line-RF-connector pin, stripe line - IC package pin). These heterogeneities distort signals that cause bandwidth decrease for RF-devices. Time domain research methods of transmission and reflected signals give the opportunities to determine heterogeneities, it properties, parameters and built up equivalent circuits. Experimental results are provided and show possibility for inductance and capacitance measurement up to 25GHz. Measurements contains result of signal path research on IC and printed circuit board (PCB) used for 12GHz RF chips. Also dielectric constant versus frequency was measured up to 35GHz.

  19. Controlled synthesis of conjugated microporous polymer films: versatile platforms for highly sensitive and label-free chemo- and biosensing.

    Science.gov (United States)

    Gu, Cheng; Huang, Ning; Gao, Jia; Xu, Fei; Xu, Yanhong; Jiang, Donglin

    2014-05-05

    Conjugated microporous polymers (CMPs), in which rigid building blocks form robust networks, are usually synthesized as insoluble and unprocessable powders. We developed a methodology using electropolymerization for the synthesis of thin CMP films. The thickness of these films is synthetically controllable, ranging from nanometers to micrometers, and they are obtained on substrates or as freestanding films. The CMP films combine a number of striking physical properties, including high porosity, extended π conjugation, facilitated exciton delocalization, and high-rate electron transfer. We explored the CMP films as versatile platforms for highly sensitive and label-free chemo- and biosensing of electron-rich and electron-poor arenes, metal ions, dopamine, and hypochloroic acid, featuring rapid response, excellent selectivity, and robust reusability.

  20. Perspective: Highly ordered MoS2 thin films grown by multi-step chemical vapor deposition process

    Directory of Open Access Journals (Sweden)

    S. N. Heo

    2016-03-01

    Full Text Available We established a process for growing highly ordered MoS2 thin films. The process consists of four steps: MoO3 thermal evaporation, first annealing, sulfurization, and second annealing. The main feature of this process is that thermally deposited MoO3 thin films are employed as a precursor for the MoS2 films. The first deposition step enabled us to achieve precise control of the resulting thickness of the MoS2 films with high uniformity. The crystalline structures, surface morphologies, and chemical states at each step were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Based on these characterizations and a careful optimization of the growth conditions, we successfully produced a highly oriented MoS2 thin film with a thickness of five monolayers over an entire one-centimeter-square sapphire substrate.