WorldWideScience

Sample records for high ge content

  1. Development of Au-Ge based candidate alloys as an alternative to high-lead content solders

    DEFF Research Database (Denmark)

    Chidambaram, Vivek; Hald, John; Hattel, Jesper Henri

    2010-01-01

    Au-Ge based candidate alloys have been proposed as an alternative to high-lead content solders that are currently being used for high-temperature applications. The changes in microstructure and microhardness associated with the addition of low melting point metals namely In, Sb and Sn to the Au......-Ge-In and Au-Ge-Sn combinations was determined to be the classic solid solution strengthening. The Au-Ge-Sb combination was primarily strengthened by the refined (Ge) dispersed phase. The aging temperature had a significant influence on the microhardness in the case of the Au-Ge-Sn candidate alloy...

  2. Impact of thickness on the structural properties of high tin content GeSn layers

    Science.gov (United States)

    Aubin, J.; Hartmann, J. M.; Gassenq, A.; Milord, L.; Pauc, N.; Reboud, V.; Calvo, V.

    2017-09-01

    We have grown various thicknesses of GeSn layers in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition cluster tool using digermane (Ge2H6) and tin tetrachloride (SnCl4). The growth pressure (100 Torr) and the F(Ge2H6)/F(SnCl4) mass-flow ratio were kept constant, and incorporation of tin in the range of 10-15% was achieved with a reduction in temperature: 325 °C for 10% to 301 °C for 15% of Sn. The layers were grown on 2.5 μm thick Ge Strain Relaxed Buffers, themselves on Si(0 0 1) substrates. We used X-ray Diffraction, Atomic Force Microscopy, Raman spectroscopy and Scanning Electron Microscopy to measure the Sn concentration, the strain state, the surface roughness and thickness as a function of growth duration. A dramatic degradation of the film was seen when the Sn concentration and layer thickness were too high resulting in rough/milky surfaces and significant Sn segregation.

  3. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

    Energy Technology Data Exchange (ETDEWEB)

    Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-02-23

    Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

  4. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

    Science.gov (United States)

    Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

    2017-12-01

    Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2 . The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.

  5. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

    OpenAIRE

    Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

    2017-01-01

    Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

  6. Magnetotransport, structural and optical characterization of p-type modulation doped heterostructures with high Ge content Si1-xGex channel grown by SS-MBE on Si1-yGey/Si(001) virtual substrates

    International Nuclear Information System (INIS)

    Myronov, M.

    2001-04-01

    This thesis is a report on experimental investigations of magnetotransport, structural and optical properties of p-type modulation doped (MOD) heterostructures with Si 1-x Ge x channel of high Ge content (0.6 1-y Ge y /Si(001) virtual substrate (VS). The active layers of MOD heterostructures were grown by solid source molecular beam epitaxy (SS-MBE). The VSs were grown either by SS-MBE or low-pressure chemical vapour deposition (LP-CVD). The influence of thermal annealing on magnetotransport, structural and optical properties of Si 1-x Ge x /Si 1-y Ge y heterostructures was studied by performing the post growth furnace thermal annealing (FTA) treatments in the temperature range of 600-900C for 30min and rapid thermal annealing (RTA) treatments at temperature 750C for 30sec. Structural and optical analysis of p-type MOD Si 1-x Ge x /Si 1-y Ge y heterostructures involved the techniques of cross-sectional transmission electron microscopy, ultra low energy secondary ion mass spectrometry, photoluminescence spectroscopy, micro-Raman spectroscopy and scanning white-light interferometry. From the combinations of experimental results obtained by these techniques the Ge composition in the SiGe heteroepilayers, their thicknesses, state of strain in the heteroepilayers and dislocations microstructure in VSs were obtained. After post growth thermal annealing treatments were observed broadening of the Si 1-x Ge x channel accompanied with the reduction of Ge content in the channel and smearing of Si 1-x Ge x /Si 1-y Ge y interfaces. The Si 0.7 Ge 0.3 on low-temperature Si buffer VSs with very good structural properties were designed and grown by SS-MBE. These include: relatively thin 850nm total thickness of VS, 4-6nm Peak-to-Valley values of surface roughness, less than 10 5 cm -2 threading dislocations density and more than 95% degree of relaxation in the top layers of VS. The Hall mobility and sheet carrier density of as-grown and annealed p-type MOD Si 1-x Ge x /Si 1-y Ge y

  7. Au-Ge based Candidate Alloys for High-Temperature Lead-Free Solder Alternatives

    DEFF Research Database (Denmark)

    Chidambaram, Vivek; Hald, John; Hattel, Jesper Henri

    2009-01-01

    Au-Ge based candidate alloys have been proposed as an alternative to high-lead content solders that are currently being used for high-temperature applications. The influence of the low melting point metals namely In, Sb and Sn to the Au-Ge eutectic with respect to the microstructure and microhard......Au-Ge based candidate alloys have been proposed as an alternative to high-lead content solders that are currently being used for high-temperature applications. The influence of the low melting point metals namely In, Sb and Sn to the Au-Ge eutectic with respect to the microstructure...... was primarily strengthened by the refined (Ge) dispersed phase. The distribution of phases played a relatively more crucial role in determining the ductility of the bulk solder alloy. In the present work it was found that among the low melting point metals, the addition of Sb to the Au-Ge eutectic would...

  8. High spin spectroscopy of 70Ge

    International Nuclear Information System (INIS)

    Kumar Raju, M.; Sugathan, P.; Seshi Reddy, T.; Thirumala Rao, B.V.; Madhusudhana Rao, P.V.; Muralithar, S.; Singh, R.P.; Bhowmik, R.K.

    2011-01-01

    Structure of nuclei in mass 70 region is of interest due to presence of a variety of complex phenomenon. In these nuclei rapid change of nuclear shape with proton and neutron numbers, spin and excitation energy. Valance nucleons in f-p-g shell configuration will drive the nuclei towards high deformations. Relatively large values of quadrupole deformation are evident in the even-even nuclei in this region. Present study is aimed to explore the high spin structure of the 70 Ge nucleus. A negative parity structure was reported in an earlier study

  9. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    DEFF Research Database (Denmark)

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

  10. The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films

    Directory of Open Access Journals (Sweden)

    Mursal Mursal

    2014-07-01

    Full Text Available The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by  increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and  the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.

  11. Prediction of superconducting ternary hydride MgGeH6: from divergent high-pressure formation routes.

    Science.gov (United States)

    Ma, Yanbin; Duan, Defang; Shao, Ziji; Li, Da; Wang, Liyuan; Yu, Hongyu; Tian, Fubo; Xie, Hui; Liu, Bingbing; Cui, Tian

    2017-10-18

    Invigorated by the high temperature superconductivity in some binary hydrogen-dominated compounds, we systematically explored high-pressure phase diagrams and superconductivity of a ternary Mg-Ge-H system using ab initio methods. Stoichiometric MgGeH 6 with high hydrogen content exhibiting Pm3[combining macron] symmetry was predicted from a series of high-pressure synthesis paths. We performed an in-depth study on three distinct formation routes to MgGeH 6 , i.e., Mg + Ge + 3H 2 → MgGeH 6 , MgGe + 3H 2 → MgGeH 6 and MgH 2 + GeH 4 → MgGeH 6 at high pressures. By directly squeezing three elemental solids Mg + Ge + 3H 2 , we obtained ternary MgGeH 6 at 200 GPa. By adding a little bit of the MgGe alloy into hydrogen, we found that MgGeH 6 can form and stabilize at about 200 GPa. More intriguingly, upon compressing MgH 2 and GeH 4 to 250 GPa, we also predicted the same MgGeH 6 . Electron structure calculations reveal that the cubic MgGeH 6 is a good metal and takes on ionic character. Electron-phonon coupling calculation reveals a large λ = 1.16 for MgGeH 6 at 200 GPa. In particular, we found that ternary MgGeH 6 could be a potential high temperature superconductor with a superconducting transition temperature T c of ∼67 K at 200 GPa.

  12. High spin states in 66,68Ge

    International Nuclear Information System (INIS)

    Hermkens, U.; Becker, F.; Eberth, J.; Freund, S.; Mylaeus, T.; Skoda, S.; Teichert, W.; Werth, A. v.d.

    1992-01-01

    High spin states of 66,68 Ge have been investigated at the FN Tandem accelerator of the University of Koeln via the reactions 40 Ca( 32 S,α2p,4p) 66,68 Ge at a beam energy of 100 MeV and 58 Ni( 16 O,α2p) 68 Ge at 65 MeV. The OSIRIS spectrometer with 12 escape suppressed Ge detectors was used to measure γγ coincidences and γ-ray angular distributions. In 66 Ge ( 68 Ge) 33 (22) new levels were found and 63 (62) new γ-transitions were placed in the level scheme. Both nuclei show a rather complicated but similar excitation pattern, ruled by the interplay of quasiparticle and collective degrees of freedom. The results are compared to the recently published EXVAM calculations for 68 Ge. (orig.)

  13. Ge distribution in the Wulantuga high-germanium coal deposit in the Shengli coalfield, Inner Mongolia, northeastern China

    Energy Technology Data Exchange (ETDEWEB)

    Du, Gang [Key Laboratory of Marginal Sea Geology, Chinese Academy of Sciences (China)]|[Coal Geology Bureau of Inner Mongolia, Hohhot, 010051 (China); Zhuang, Xinguo [Institute of Sedimentary Basin and Mineral, Faculty of Earth Resources, China University of Geosciences, Hubei, 430074 (China)]|[State Key Laboratory of Geological Processes and Mineral Resources, China University of Geosciences, Hubei, 430074 (China); Querol, Xavier; Izquierdo, Maria; Alastuey, Andres; Moreno, Teresa; Font, Oriol [Institute of Earth Science ' Jaume Almera' , CSIC, C/ LLuis Sole Sabaris s/n, 08028 Barcelona (Spain)

    2009-03-01

    The geological and geochemical controls of the Ge distribution in the Cretaceous Wulantuga high-Germanium coal deposit in the Shengli coal field, Inner Mongolia are investigated. This paper focuses mainly on the spatial distribution of the Ge contents in coal. The high-Ge coals mainly occur in three splits of the 6 coal in the southwestern part of the Shengli coal field. Mean germanium contents in the coal range from 32 to 820 {mu}g/g, with a mean value of 137 {mu}g/g, on a bulk coal basis (mean of 939 coal samples from 75 boreholes in the 6 coal seam) in an area of 2.2 km{sup 2}. The highest Ge content occurs SW of 6 coal seam, close to the margins of the coal basin, decreasing with a fan-shaped trend towards NW, the direction of the coal basin. There is an negative correlation between the mean Ge content and the thickness of the coal seam. Different distribution patterns of Ge content were found in vertical profiles. High Ge concentrations may occur in the middle parts of coal seams, at the bottom and/or the top of thick coal seams and inconspicuous variation. A major organic affinity was determined for Ge, with a special enriched in the banded bright and semibright coal. The high-Ge coals and the coalified wood in the sandstone overlaying the 6-1 coal highly enriched in Ge, As, Sb, W, Cs, Tl, Be, and Hg. The Late Jurassic silicified volcanic rocks in the NW of the Ge coal deposit relatively high enriched in Ge, Ga, Sb, As, Cs, Be, Ge and Hg. The correlation coefficients among the elements enriched showed marked variations at close sites in this deposit, suggesting a possible diagenetic origin of the geochemical anomaly. The main Ge anomaly was attributed to early Cretaceous hydrothermal fluids circulating through the fault systems and porous volcanic rocs, probably from the subjacent granitoid rocks. The fault systems, the porous coarse clastic rocks overlying coal seam and the lithotype of coal played an important role in the transport and trapping of Ge. A

  14. Microstructure, Lattice Misfit, and High-Temperature Strength of γ'-Strengthened Co-Al-W-Ge Model Superalloys

    Science.gov (United States)

    Zenk, Christopher H.; Bauer, Alexander; Goik, Philip; Neumeier, Steffen; Stone, Howard J.; Göken, Mathias

    2016-05-01

    The quaternary alloy system Co-Al-W-Ge was investigated and it was found that a continuous γ /γ ^' two-phase field extends between the systems Co-Al-W and Co-Ge-W. All alloys examined comprised cuboidal L1_2 precipitates coherently embedded in an A1 matrix. Differential scanning calorimetry measurements revealed that the liquidus, solidus, and γ ^' -solvus temperatures decrease when the Ge content is increased. The lower liquidus temperature and the capability of γ ^' -strengthening in the Ge-rich alloys make them interesting as potential candidates for brazing applications of Co-base superalloys. The γ /γ ^' lattice misfit was determined by high-resolution X-ray diffraction and found to be positive for all alloys investigated, decreasing with increasing Ge content. The mechanical properties of the Al-rich alloys surpass those rich in Ge.

  15. High-pressure structural behaviour of nanocrystalline Ge

    International Nuclear Information System (INIS)

    Wang, H; Liu, J F; He, Y; Wang, Y; Chen, W; Jiang, J Z; Olsen, J Staun; Gerward, L

    2007-01-01

    The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transition remains constant. Simplified models for the high-pressure structural behaviour are presented, based on the assumption that a large fraction of the atoms reside in grain boundary regions of the nanocrystalline material. The interface structure plays a significant role in affecting the transition pressure and the bulk modulus

  16. High-field magnetization of UCuGe single crystal

    Czech Academy of Sciences Publication Activity Database

    Andreev, Alexander V.; Mushnikov, N. V.; Gozo, T.; Honda, F.; Sechovský, V.; Prokeš, K.

    346-347, - (2004), s. 132-136 ISSN 0921-4526 R&D Projects: GA ČR GA202/02/0739 Institutional research plan: CEZ:AV0Z1010914 Keywords : uranium intermetallics * UCuGe * high fields * magnetic anisotropy * field-induced phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.679, year: 2004

  17. High-Performance γ spectrometry Using Ge(Li) Detectors

    International Nuclear Information System (INIS)

    Brethon, J.; Libs, G.; Detourne, G.; Legrand, J.; Boulanger, J.

    1968-01-01

    This report describes a high resolution gamma spectrometer design which use Ge-Li detectors, a cooled field effect transistor preamplifier, and a spectrum stabiliser. The obtained resolution and the 122 keV gamma ray of the 57 Co is 0.96 keV, and 239 Pu, 233 Pa and 95 Zr + 95 Nb spectra are shown for the example. (authors) [fr

  18. Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ramirez-Garcia, E; Valdez-Monroy, L A; Rodriguez-Mendez, L M; Valdez-Perez, D; Galaz-Larios, M C; Enciso-Aguilar, M A; Zerounian, N; Aniel, F

    2014-01-01

    We describe a reliable technique to separate the different contributions to the apparent base resistance (R B  = R Bx  + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

  19. High temperature XRD of Cu2GeSe3

    International Nuclear Information System (INIS)

    Premkumar, D. S.; Malar, P.; Chetty, Raju; Mallik, Ramesh Chandra

    2015-01-01

    The Cu 2 GeSe 3 is prepared by solid state synthesis method. The high temperature XRD has been done at different temperature from 30 °C to 450 °C. The reitveld refinement confirms Cu 2 GeSe 3 phase and orthorhombic crystal structure. The lattice constants are increasing with increase in the temperature and their rate of increase with respect to temperature are used for finding the thermal expansion coefficient. The calculation of the linear and volume coefficient of thermal expansion is done from 30 °C to 400 °C. Decrease in the values of linear expansion coefficients with temperature are observed along a and c axis. Since thermal expansion coefficient is the consequence of the distortion of atoms in the lattice; this can be further used to find the minimum lattice thermal conductivity at given temperature

  20. Measurement of energy transitions for the decay radiations of 75Ge and 69Ge in a high purity germanium detector

    Science.gov (United States)

    Aydın, Güral; Usta, Metin; Oktay, Adem

    2018-06-01

    Photoactivation experiments have a wide range of application areas in nuclear, particle physics, and medical physics such as measuring energy levels and half-lifes of nuclei, experiments for understanding imaging methods in medicine, isotope production for patient treatment, radiation security and transportation, radiation therapy, and astrophysics processes. In this study, some energy transition values of the decay radiations of 75Ge and 69Ge, which are the products of photonuclear reactions (γ, n) with germanium isotopes (75Ge and 69Ge), were measured. The gamma spectrum as a result of atomic transitions were analysed by using a high purity semiconductor germanium detector and the energy transition values which are presented here were compared with the ones which are the best in literature. It was observed that the results presented are in agreement with literature in error range and some results have better precisions.

  1. High-pressure structural behavior of nanocrystalline Ge

    DEFF Research Database (Denmark)

    Wang, H.; Liu, J. F.; Yan, H.

    2007-01-01

    The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transi...

  2. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325 °C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200 μm in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  3. Properties of three-dimensional structures prepared by Ge dewetting from Si(111) at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Shklyaev, Alexander, E-mail: shklyaev@isp.nsc.ru [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Bolotov, Leonid; Poborchii, Vladimir; Tada, Tetsuya [National Institute of Advanced Industrial Science and Technology, Higashi 1-1-1, Tsukuba, Ibaraki 305-8562 (Japan)

    2015-05-28

    The formation of three-dimensional (3D) structures during Ge deposition on Si(111) at about 800 °C is studied with scanning tunneling, Kelvin probe and electron microscopies, and scanning tunneling and Raman spectroscopies. The observed surface morphology is formed by dewetting of Ge from Si(111), since it occurs mainly by means of minimization of surface and interfacial energies. The dewetting proceeds through massive Si eroding around growing 3D structures, providing them to be composed of SiGe with about a 30% Ge content, and leads to the significant reduction of the SiGe/Si interface area. It is found that the SiGe top component of 3D structures forms sharp interfaces with the underlying Si. The minimization of interfacial and strain energies occurs on the way that the 3D structures appear to get the dendrite-like shape. The Ge distribution in the 3D SiGe structures is inhomogeneous in the lateral dimension with a higher Ge concentration in their central areas and Ge segregation on their surface.

  4. Properties of three-dimensional structures prepared by Ge dewetting from Si(111) at high temperatures

    International Nuclear Information System (INIS)

    Shklyaev, Alexander; Bolotov, Leonid; Poborchii, Vladimir; Tada, Tetsuya

    2015-01-01

    The formation of three-dimensional (3D) structures during Ge deposition on Si(111) at about 800 °C is studied with scanning tunneling, Kelvin probe and electron microscopies, and scanning tunneling and Raman spectroscopies. The observed surface morphology is formed by dewetting of Ge from Si(111), since it occurs mainly by means of minimization of surface and interfacial energies. The dewetting proceeds through massive Si eroding around growing 3D structures, providing them to be composed of SiGe with about a 30% Ge content, and leads to the significant reduction of the SiGe/Si interface area. It is found that the SiGe top component of 3D structures forms sharp interfaces with the underlying Si. The minimization of interfacial and strain energies occurs on the way that the 3D structures appear to get the dendrite-like shape. The Ge distribution in the 3D SiGe structures is inhomogeneous in the lateral dimension with a higher Ge concentration in their central areas and Ge segregation on their surface

  5. High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

    Science.gov (United States)

    Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

    2017-07-01

    The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

  6. Development of high responsivity Ge:Ga photoconductors

    International Nuclear Information System (INIS)

    Haegel, N.M.; Hueschen, M.R.; Haller, E.E.

    1984-06-01

    Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10 -4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10 8 photons/sec at lambda=93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material

  7. Multiple collision effects on the antiproton production by high energy proton (100 GeV - 1000 GeV)

    International Nuclear Information System (INIS)

    Takahashi, Hiroshi; Powell, J.

    1987-01-01

    Antiproton production rates which take into account multiple collision are calculated using a simple model. Methods to reduce capture of the produced antiprotons by the target are discussed, including geometry of target and the use of a high intensity laser. Antiproton production increases substantially above 150 GeV proton incident energy. The yield increases almost linearly with incident energy, alleviating space charge problems in the high current accelerator that produces large amounts of antiprotons

  8. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

    2018-01-01

    that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

  9. From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures

    International Nuclear Information System (INIS)

    Isa, Fabio; Salvalaglio, Marco; Dasilva, Yadira Arroyo Rojas; Jung, Arik; Isella, Giovanni; Erni, Rolf; Niedermann, Philippe; Gröning, Pierangelo; Montalenti, Francesco; Känel, Hans von

    2016-01-01

    We present a detailed experimental and theoretical analysis of the epitaxial stress relaxation process in micro-structured compositionally graded alloys. We focus on the pivotal SiGe/Si(001) system employing patterned Si substrates at the micrometre-size scale to address the distribution of threading and misfit dislocations within the heterostructures. SiGe alloys with linearly increasing Ge content were deposited by low energy plasma enhanced chemical vapour deposition resulting in isolated, tens of micrometre tall 3D crystals. We demonstrate that complete elastic relaxation is achieved by appropriate choice of the Ge compositional grading rate and Si pillar width. We investigate the nature and distribution of dislocations along the [001] growth direction in SiGe crystals by transmission electron microscopy, chemical defect etching and etch pit counting. We show that for 3 μm wide Si pillars and a Ge grading rate of 1.5% μm −1 , only misfit dislocations are present while their fraction is reduced for higher Ge grading rates and larger structures due to dislocation interactions. The experimental results are interpreted with the help of theoretical calculations based on linear elasticity theory describing the competition between purely elastic and plastic stress relaxation with increasing crystal width and Ge compositional grading rate.

  10. High-pressure-assisted synthesis of high-volume ZnGeP2 polycrystalline

    Science.gov (United States)

    Huang, Changbao; Wu, Haixin; Xiao, Ruichun; Chen, Shijing; Ma, Jiaren

    2018-06-01

    The pnictide and chalcogenide semiconductors are promising materials for the applications in the field of photoelectric. High-purity and high-volume polycrystalline required in the real-world applications is hard to be synthesized due to the high vapor pressure of phosphorus and sulfur components at high temperature. A new high-pressure-resisted method was used to investigate the synthesis of the nonlinear-optical semiconductor ZnGeP2. The high-purity ZnGeP2 polycrystalline material of approximately 500 g was synthesized in one run, which enables the preparation of nominally stoichiometric material. Since increasing internal pressure resistance of quartz crucible and reducing the reaction space, the high-pressure-resisted method can be used to rapidly synthesize other pnictide and chalcogenide semiconductors and control the components ratio.

  11. High spin levels in 66Ga, 68Ga, 70Ga and 68Ge, 70Ge, 72Ge via fusion evaporation reactions induced by α-particles

    International Nuclear Information System (INIS)

    Morand, C.

    1979-01-01

    The high spin (J 70 Ga all the members (except the 3 - one) of the (πpsub(3/2), νgsub(9/2)) configuration have been identified, in addition with the (πfsub(5/2), νgsub(9/2))sub(7 - ) and (πgsub(9/2), νgsub(9/2))sub(9 + ) states. In 66 Ga and 68 Ga most of the levels with J>7 ca be described as a result of maximum coupling of a gsub(9/2) neutron with the odd Ga core. Thus the (πgsub(9/2), νgsub(9/2))sub(9 + ) states have been safely located. In the same way the even Ge, the backbending effect at the Jsup(π)=8 + state is less and less pronouced from the 68 Ge to the 72 Ge; that can be explained by the (νgsub(9/2)) 2 sub(8 + ) configuration of this state, so that the 8 + →6 + γ-transition is more and more allowed with increasing N, i.e. as the νgsub(9/2) shell acts more and more in the lower yrast levels Jsup(π)=0 + , 2 + , 4 + , 6 + configurations [fr

  12. A sample of high multiplicity pp reactions at 19 GeV/c

    International Nuclear Information System (INIS)

    Allan, J.; Blomqvist, G.

    1976-02-01

    This report describes the experimental procedure used in obtaining samples of high muliplicity pp reactions at 19 GeV/c. Various methods to improve the quality of the samples are tested. The analysis is part of the general study of pp collisions at 19 GeV/c which is performed within the Scandinavian Bubble Chamber Collaboration. (Auth.)

  13. Trace element affinities in two high-Ge coals from China

    Energy Technology Data Exchange (ETDEWEB)

    Jing Li; Xinguo Zhuang; Xavier Querol [China University of Geosciences, Wuhan (China). Faculty of Earth Resources

    2011-01-15

    The Lincang (Yunnan Province, Southwest China) and Wulantuga (Inner Mongolia, Northeast China) coal deposits are known because of the high-Ge content. These coals have also a high concentration of a number of other elements. To determine the mode of occurrence of the enriched elements in both coals, six density fractions from {lt} 1.43 to {gt} 2.8 g/cm{sup 3} were obtained from two representative samples using heavy-liquids. A number of peculiar geochemical patterns characterize these high-Ge coals. Thus, the results of the chemical analysis of these density fractions showed that both coals (very distant and of a different geological age) are highly enriched (compared with the usual worldwide coal concentration ranges) in Ge, As, Sb, W, Be, and Tl. This may be due to similar geochemistry of hydrothermal fluids influencing the Earth Crust in these regions of China. Moreover, Wulantuga coal (Early Cretaceous subbituminous coal) is also enriched in Ca, Mg, and Na, and Lincang coal (Neogene subbituminous coal) in K, Rb, Nb, Mo, Sn, Cs, and U. A group of elements consisting of Ge, W, B, Nb, and Sb mostly occur with an organic affinity in both coals. Additionally, Be, U, and Mo (and partially Mn and Zn) in Lincang, and Na and Mg in Wulantuga occur also with a major organic affinity. Both coals have sulfide-arsenide mineral assemblages (Fe, S, As, Sn, and Pb, and in addition to Tl, Ta, and Cs in the Lincang coal). The occurrence of Al, P, Li, Sc, Ti, V, Cr, and Zr in both coals, and Ba in Lincang, are associated with the mineral assemblage of silico-aluminates and minor heavy minerals. Furthermore, P, Na, Li, Sc, Ti, Ga, Rb, Zr, Cr, Ba, Th, and LREE (La, Ce, Pr, Nd, and Gd) in Lincang are associated with mineral assemblages of phosphates and minor heavy minerals. The two later mineral assemblages are derived from the occurrence of detrital minerals. 34 refs., 7 figs., 3 tabs.

  14. High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

    2010-01-01

    In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

  15. Ge nano-layer fabricated by high-fluence low-energy ion implantation

    International Nuclear Information System (INIS)

    Lu Tiecheng; Dun Shaobo; Hu Qiang; Zhang Songbao; An Zhu; Duan Yanmin; Zhu Sha; Wei Qiangmin; Wang Lumin

    2006-01-01

    A Ge nano-layer embedded in the surface layer of an amorphous SiO 2 film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed

  16. Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakata, M.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Jevasuwan, W.; Fukata, N. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-09-28

    Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.

  17. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo

    2018-04-14

    The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

  18. Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

    Directory of Open Access Journals (Sweden)

    Chad A. Stephenson

    2016-12-01

    Full Text Available Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx offers a particularly interesting prospect. By using a precursor gas with a Ge4C core, C can be preferentially incorporated in substitutional sites, suppressing interstitial and C cluster defects. We present a method of reproducible and upscalable gas synthesis of tetrakis(germylmethane, or (H3Ge4C, followed by the design of a hybrid gas/solid-source molecular beam epitaxy system and subsequent growth of defect-free Ge1−xCx by molecular beam epitaxy (MBE. Secondary ion mass spectroscopy, transmission electron microscopy and contactless electroreflectance confirm the presence of carbon with very high crystal quality resulting in a decrease in the direct bandgap energy. This technique has broad applicability to growth of highly mismatched alloys by MBE.

  19. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

    Science.gov (United States)

    Shklyaev, A A; Latyshev, A V

    2016-12-01

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

  20. Surface segregation of Ge during Si growth on Ge/Si(0 0 1) at low temperature observed by high-resolution RBS

    International Nuclear Information System (INIS)

    Nakajima, K.; Hosaka, N.; Hattori, T.; Kimura, K.

    2002-01-01

    The Si/Ge/Si(0 0 1) multilayer with about 1 ML Ge layer is fabricated by evaporating Si overlayer on a Ge/Si(0 0 1) surface at 20-300 deg. C. The depth profile of the Ge atoms is observed by high-resolution Rutherford backscattering spectroscopy to investigate the possibility of Ge delta doping in Si. The observed profile of the Ge atoms spreads over several atomic layers even at 20 deg. C and a significant amount of Ge is located in the surface layer at higher temperatures. The results at 20-150 deg. C are well explained with two-layer model for surface segregation of the Ge atoms and the segregation rates are estimated. The activation energy for surface segregation of Ge atoms in amorphous Si is evaluated to be 0.035 eV, which is much smaller than the value reported for Si deposition at 500 deg. C. The small activation energy suggests that local heating during the Si deposition is dominant at low temperature

  1. Passivation of Ge/high-κ interface using RF Plasma nitridation

    Science.gov (United States)

    Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

    2018-01-01

    In this paper, plasma nitridation of a germanium surface using NH3 and N2 gases is performed with a standard RF-PECVD method at a substrate temperature of 250 °C. The structural and optical properties of the Ge surface have been investigated using Atomic Force Microscopy (AFM), Fourier Transform Infrared Spectroscopy (FT-IR), and Variable Angle Spectroscopic Ellipsometery (VASE). Study of the Ge (100) surface revealed that it is nitrated after plasma treatment while the GeO2 regrowth on the surface has been suppressed. Also, stability of the treated surface under air exposure is observed, where all the measurements were performed at room ambient. The electrical characteristics of fabricated Al/Ti/HfO2/GeON/p-Ge capacitors using the proposed surface treatment technique have been investigated. The C-V curves indicated a negligible hysteresis compared to ˜500 mV observed in untreated samples. Additionally, the C-V characteristic is used to extract the high-κ/Ge interface trap density using the most commonly used methods in determining the interface traps. The discussion includes the Dit calculation from the high-low frequency (Castagné-Vapaille) method and Terman (high-frequency) method. The high-low frequency method indicated a low interface trap density of ˜2.5 × 1011 eV-1.cm-2 compared to the Terman method. The J-V measurements revealed more than two orders of magnitude reduction of the gate leakage. This improved Ge interface quality is a promising low-temperature technique for fabricating high-performance Ge MOSFETs.

  2. Nitride passivation of the interface between high-k dielectrics and SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

    2016-01-04

    In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

  3. High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts.

    Science.gov (United States)

    Burchhart, T; Zeiner, C; Hyun, Y J; Lugstein, A; Hochleitner, G; Bertagnolli, E

    2010-10-29

    Ge nanowires (NWs) about 2 µm long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH(4) as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu(3)Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga(+) implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.

  4. The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

    Science.gov (United States)

    Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

    2018-03-01

    The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

  5. Processing high-Tc superconductors with GeV heavy ions

    International Nuclear Information System (INIS)

    Marwick, A.D.; Civale, L.; Krusin-Elbaum, L.; Worthington, T.K.; Holtzberg, F.; Thompson, J.R.; Sun, Y.R.; Kerchner, H.R.

    1992-01-01

    Irradiation of high-T c superconducting crystals with low doses (10 10 --10 11 ions/cm 2 ) of GeV heavy ions (0.58 GeV Sn-116; 1.0-GeV Au-197) produces a unique microstructure consisting of discrete amorphous columns which are only a few nm in diameter but tens of microns long. It has been found recently that this columnar microstructure causes larger increases in magnetization and critical current at high temperature and high magnetic field than other types of defects in these materials. This can be understood as a consequence of the effective pinning of magnetic vortex lines provided by the columnar defects. Measurements confirm that the pinning is strongest when the magnetic field is aligned with the ion tracks. Differences in the pinning in different materials can be related to differences in their anisotropy, which affects the structure of the vortices and their pinning at columnar defects

  6. Continuous, flexible, and high-strength superconducting Nb3Ge and Nb3Sn filaments

    International Nuclear Information System (INIS)

    Ahmad, I.; Heffernan, W.J.

    1976-01-01

    Fabrication of continuous, flexible, and high-strength (1600 MN/m 2 ) composite filaments of Nb 3 Ge (T/subc/ 18 0 K) and Nb 3 Sn is reported, involving chemical vapor deposition of these compounds on Nb-coated high-strength W--1% ThO 2 filaments

  7. Structural stability, dynamical stability, thermoelectric properties, and elastic properties of GeTe at high pressure

    Science.gov (United States)

    Kagdada, Hardik L.; Jha, Prafulla K.; Śpiewak, Piotr; Kurzydłowski, Krzysztof J.

    2018-04-01

    The stability of GeTe in rhombohedral (R 3 m ), face centred cubic (F m 3 m ), and simple cubic (P m 3 m ) phases has been studied using density functional perturbation theory. The rhombohedral phase of GeTe is dynamically stable at 0 GPa, while F m 3 m and P m 3 m phases are stable at 3.1 and 33 GPa, respectively. The pressure-dependent phonon modes are observed in F m 3 m and P m 3 m phases at Γ and M points, respectively. The electronic and the thermoelectric properties have been investigated for the stable phases of GeTe. The electronic band gap for rhombohedral and F m 3 m phases of GeTe has been observed as 0.66 and 0.17 eV, respectively, while the P m 3 m phase shows metallic behavior. We have used the Boltzmann transport equation under a rigid band approximation and constant relaxation time approximation as implemented in boltztrap code for the calculation of thermoelectric properties of GeTe. The metallic behavior of P m 3 m phase gives a very low value of Seebeck coefficient compared to the other two phases as a function of temperature and the chemical potential μ. It is observed that the rhombohedral phase of GeTe exhibits higher thermoelectric performance. Due to the metallic nature of P m 3 m phase, negligible thermoelectric performance is observed compared to R 3 m and F m 3 m -GeTe. The calculated lattice thermal conductivities are low for F m 3 m -GeTe and high for R 3 m -GeTe. At the relatively higher temperature of 1350 K, the figure of merit ZT is found to be 0.7 for rhombohedral GeTe. The elastic constants satisfy the Born stability criteria for all three phases. The rhombohedral and F m 3 m phases exhibits brittleness and the P m 3 m phase shows ductile nature.

  8. Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

    Science.gov (United States)

    Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

    2018-05-01

    We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

  9. High-pressure EXAFS study of vitreous GeO2 up to 44 GPa

    International Nuclear Information System (INIS)

    Baldini, M.; Aquilanti, G.; Mao, H-k.; Yang, W.; Shen, G.; Pascarelli, S.; Mao, W. L.

    2010-01-01

    High-pressure extended x-ray absorption fine-structure measurements were performed on amorphous GeO 2 over increasing and decreasing pressure cycles at pressures up to 44 GPa. Several structural models based on crystalline phases with fourfold, fivefold, and sixfold coordination were used to fit the Ge-O first shell. The Ge-O bond lengths gradually increased up to 30 GPa. Three different pressure regimes were identified in the pressure evolution of the Ge-O bond distances. Below 13 GPa, the local structure was well described by a fourfold 'quartzlike' model whereas a disordered region formed by a mixture of four- and five-coordinated germanium-centered polyhedra was observed in the intermediate pressure range between 13 and 30 GPa. Above 30 GPa the structural transition to the maximum coordination could be considered complete. The present results shed light on the GeO 2 densification process and on the nature of the amorphous-amorphous transition, suggesting that the transition is more gradual and continuous than what has been previously reported.

  10. Stability of amorphous Ge-As(Sb)-Se films to high-energy electron irradiation

    International Nuclear Information System (INIS)

    Savchenko, N.D.

    1999-01-01

    The results of the investigation of high-energy electron (6.5 MeV) irradiation effect on structure, optical, electrical and mechanical properties for thin films obtained by thermal evaporation of Ge-As-Se and Ge-Sb-Se glasses have been presented. The electron-induced changes in film properties versus average coordination number and relative free volume for bulk glasses have been discussed. It has been found that the higher radiation stability is characteristic to the films deposited from the glasses with the lower relative free volume

  11. Aqueous Binder Enhanced High-Performance GeP5 Anode for Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Jun He

    2018-02-01

    Full Text Available GeP5 is a recently reported new anode material for lithium ion batteries (LIBs, it holds a large theoretical capacity about 2300 mAh g−1, and a high rate capability due to its bi-active components and superior conductivity. However, it undergoes a large volume change during its electrochemical alloying and de-alloying with Li, a suitable binder is necessary to stable the electrode integrity for improving cycle performance. In this work, we tried to apply aqueous binders LiPAA and NaCMC to GeP5 anode, and compared the difference in electrochemical performance between them and traditional binder PVDF. As can be seen from the test result, GeP5 can keep stable in both common organic solvents and proton solvents such as water and alcohol solvents, it meets the application requirements of aqueous binders. The electrochemistry results show that the use of LiPAA binder can significantly improve the initial Coulombic efficiency, reversible capacity, and cyclability of GeP5 anode as compared to the electrodes based on NaCMC and PVDF binders. The enhanced electrochemical performance of GeP5 electrode with LiPAA binder can be ascribed to the unique high strength long chain polymer structure of LiPAA, which also provide numerous uniform distributed carboxyl groups to form strong ester groups with active materials and copper current collector. Benefit from that, the GeP5 electrode with LiPAA can also exhibit excellent rate capability, and even at low temperature, it still shows attractive electrochemical performance.

  12. Physics with a high-intensity proton accelerator below 30 GeV

    International Nuclear Information System (INIS)

    Hoffman, C.M.

    1982-01-01

    The types of physics that would be pursued at a high-intensity, moderate-energy proton accelerator are discussed. The discussion is drawn from the deliberations of the 30-GeV subgroup of the Fixed-Target Group at this workshop

  13. A 1.5 GeV high brilliance synchrotron light source with combined function lattice

    International Nuclear Information System (INIS)

    Eriksson, M.; Lindgren, L.J.; Andersson, Aa.; Roejsel, P.; Werin, S.

    1988-01-01

    A 1.5 GeV synchrotron light source with a combined function lattice is studied. The light source will offer X-ray radiation with λc=1.0 angstrom from a superconducting wiggler and high brilliance VUV-radiation from undulators. The magnet lattice, magnet design and ring performance is discussed. (authors)

  14. High Content Screening: Understanding Cellular Pathway

    International Nuclear Information System (INIS)

    Mohamed Zaffar Ali Mohamed Amiroudine; Daryl Jesus Arapoc; Zainah Adam; Shafii Khamis

    2015-01-01

    High content screening (HCS) is the convergence between cell-based assays, high-resolution fluorescence imaging, phase-contrast imaging of fixed- or live-cell assays, tissues and small organisms. It has been widely adopted in the pharmaceutical and biotech industries for target identification and validation and as secondary screens to reveal potential toxicities or to elucidate a drugs mechanism of action. By using the ImageXpress® Micro XLS System HCS, the complex network of key players controlling proliferation and apoptosis can be reduced to several sentinel markers for analysis. Cell proliferation and apoptosis are two key areas in cell biology and drug discovery research. Understanding the signaling pathways in cell proliferation and apoptosis is important for new therapeutic discovery because the imbalance between these two events is predominant in the progression of many human diseases, including cancer. The DNA binding dye DAPI is used to determine the nuclear size and nuclear morphology as well as cell cycle phases by DNA content. Images together with MetaXpress® analysis results provide a convenient and easy to use solution to high volume image management. In particular, HCS platform is beginning to have an important impact on early drug discovery, basic research in systems cell biology, and is expected to play a role in personalized medicine or revealing off-target drug effects. (author)

  15. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  16. A Measurement of GE^n at High Momentum Transfer in Hall A

    Science.gov (United States)

    Feuerbach, Robert J.; Wojtsekhowski, Bogdan

    2006-10-01

    A precision measurement of the electric form-factor of the neutron, GE^n, at Q^2 up to 3.5 GeV^2 was recently completed in Hall A at the Thomas Jefferson National Accelerator Facility(Jefferson Lab). The ratio GE^n/GM^n was measured through the beam-target asymmetry A of electrons quasi-elastically scattered off neutrons in the reaction ^3He(e,e' n). The experiment took advantage of recent developments of the electron beam and target, as well as two detectors new to Jefferson Lab. The measurement used the accelerator's 100% duty-cycle high-polarization (typically 84%) electron beam and a new, hybrid optically-pumped polarized ^3He target which achieved polarizations above 50%. A medium acceptance (80msr) open-geometry magnetic spectrometer (BigBite) detected the scattered electron, while a new neutron detector was constructed to observe the released neutron. An overview of the experiment and the experimental motivation will be discussed, in particular the large range of predictions from modern calculations for GE^n at this relatively high Q^2. Finally, the analysis progress and preliminary results will be presented.

  17. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    OpenAIRE

    Pan, Hsuan-yu

    2010-01-01

    This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in- dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio's Quad. A broadband linear amplifier with 46dBm OIP₃ at 20MHz, 34dBm OIP₃ at 1GHz, 6dB noise figure and 10.3dBm P₁dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain...

  18. The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

    Directory of Open Access Journals (Sweden)

    Georgios S. E. Antipas

    2015-01-01

    Full Text Available The atomic environments of two chalcogenide glasses, with compositions GeSe4In10 and GeSe4In15, were studied via Reverse Monte Carlo and Density Functional Theory. Indium content demoted Ge–Se bonding in favor of Se-In while the contribution of Se–Se in the first coordination shell order was faint. Upon transition to the richer In glass, there was formation of rich Ge-centered clusters at radial distances further than 4 Å from the RMC box center, which was taken to signify a reduction of Ge–Se interactions. Cluster coordination by Se promoted stability while, very conclusively, In coordination lowered cluster stability by intervening in the Ge–Se and Se–Se networks.

  19. High content screening in microfluidic devices

    Science.gov (United States)

    Cheong, Raymond; Paliwal, Saurabh; Levchenko, Andre

    2011-01-01

    Importance of the field Miniaturization is key to advancing the state-of-the-art in high content screening (HCS), in order to enable dramatic cost savings through reduced usage of expensive biochemical reagents and to enable large-scale screening on primary cells. Microfluidic technology offers the potential to enable HCS to be performed with an unprecedented degree of miniaturization. Areas covered in this review This perspective highlights a real-world example from the authors’ work of HCS assays implemented in a highly miniaturized microfluidic format. Advantages of this technology are discussed, including cost savings, high throughput screening on primary cells, improved accuracy, the ability to study complex time-varying stimuli, and ease of automation, integration, and scaling. What the reader will gain The reader will understand the capabilities of a new microfluidics-based platform for HCS, and the advantages it provides over conventional plate-based HCS. Take home message Microfluidics technology will drive significant advancements and broader usage and applicability of HCS in drug discovery. PMID:21852997

  20. High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

    Directory of Open Access Journals (Sweden)

    Wei-Cheng Kuo

    2016-01-01

    Full Text Available We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD at low growth temperature (180°C. The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD and spectroscopy ellipsometry (SE. The full width at half maximum (FWHM of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.

  1. Structural study of U(Pd sub 1 sub - sub x Fe sub x) sub 2 Ge sub 2 at high pressure

    CERN Document Server

    Sikolenko, V V; Pomjakushina, E V; Pomjakushin, V Y; Balagurov, A M; Keller, L; Glazkov, V P; Gribanov, A V; Goncharenko, I N; Savenko, B N

    2003-01-01

    The crystal structure of the U(Pd sub 1 sub - sub x Fe sub x) sub 2 Ge sub 2 compounds with Fe content x = 0- 0.03 and the crystal and magnetic structure of U(Pd sub 0 sub . sub 9 sub 8 Fe sub 0 sub . sub 0 sub 2) sub 2 Ge sub 2 at high external pressures up to 4.5 GPa were studied by means of powder neutron diffraction in the temperature range 1.5-300 K. With increasing Fe content the values of the lattice parameters and interatomic distances change only slightly, but it is known from previous experiments that the magnetic structure changes drastically for x >= 0.015. In contrast to this, high external pressure modifies the crystal structure more significantly while the magnetic structure remains unchanged. The results obtained allow one to infer that drastic changes in the magnetic structure of the U(Pd sub 1 sub - sub x Fe sub x) sub 2 Ge sub 2 compounds with increasing Fe content are a consequence of modification of the RKKY-type (RKKY standing for Ruderman, Kittel, Kasuya and Yosida) indirect exchange in...

  2. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

    Science.gov (United States)

    Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2016-08-22

    We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

  3. A high linearity SiGe HBT LNA for GPS receiver

    International Nuclear Information System (INIS)

    Luo Yanbin; Shi Jian; Ma Chengyan; Gan Yebing; Qian Min

    2014-01-01

    A high linearity 1.575 GHz SiGe:HBT low noise amplifier (LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point of +7.8 dBm and an input third-order intercept point of +1.8 dBm. The chip occupies a 500 × 560 μm 2 area and consumes 3.6 mA from a 2.85 V power supply. (semiconductor integrated circuits)

  4. A Study of High Transverse Momentum Electrons Produced in pp Collisions at 540 GeV

    DEFF Research Database (Denmark)

    Bagnaia, P; Kofoed-Hansen, O.

    1984-01-01

    The production of electrons with very high transverse momentum has been studied in the UA2 experiment at the CERN [`(p)]ppp collider ( Öss =540 GeV). From a sample of events containing an electron candidate withp T >15 GeV/c, we extract a clear signal resulting from the production of the charged...... intermediate vector bosonW ±, which subsequently decays into an electron and a neutrino. We study theW production and decay properties. Further-more, we refine our results on the production and decay of the neutral vector bosonZ 0. Finally, we compare the experimental results to the predictions of the standard...

  5. Ultra high hole mobilities in a pure strained Ge quantum well

    International Nuclear Information System (INIS)

    Mironov, O.A.; Hassan, A.H.A.; Morris, R.J.H.; Dobbie, A.; Uhlarz, M.; Chrastina, D.; Hague, J.P.; Kiatgamolchai, S.; Beanland, R.; Gabani, S.; Berkutov, I.B.; Helm, M.; Drachenko, O.; Myronov, M.; Leadley, D.R.

    2014-01-01

    Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were − 14 T < B < + 14 T and 1.5 K < T < 300 K respectively. Using maximum entropy-mobility spectrum analysis (ME-MSA) and Bryan's algorithm mobility spectrum (BAMS) analysis, a RT two dimensional hole gas drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s was determined for a sheet density (p s ) 9.8 × 10 10 cm −2 (by ME-MSA) and (3.9 ± 0.2) × 10 3 cm 2 /V s for a sheet density (p s ) 5.9 × 10 10 cm −2 (by BAMS). - Highlights: • Pure strained Ge channel grown by reduced pressure chemical vapor deposition • Maximum entropy-mobility spectrum analysis • Bryan's algorithm mobility spectrum analysis • High room temperature hole drift mobility of (3.9 ± 0.4) × 10 3 cm 2 /V s • Extremely high hole mobility of 1.1 × 10 6 cm 2 /V s at 12 K

  6. Antibodies against high frequency Gerbich 2 antigen (anti-Ge2: A real challenge in cross matching lab

    Directory of Open Access Journals (Sweden)

    Ravindra P Singh

    2013-01-01

    Full Text Available Transfusion management of patients′ alloimmunized against high-prevalence erythrocyte antigens is often problematic in emergency situations. Gerbich (Ge is very common blood group system and Gerbich-2 (Ge-2 antigen present in high frequency and outside Papua New Guinea population, Ge-2 negative population almost nil. To manage such kind of problems with real emergencies, implementation of rare donor registry program, cryopreservation of red cells of rare donors and biological cross matching to assess significance of these antibodies is warranted.

  7. Preparation of high T/sup c/ Nb3Ge superconductors by chemical vapor deposition

    International Nuclear Information System (INIS)

    Newkirk, L.R.; Valencia, F.A.; Wallace, T.C.

    1975-01-01

    Bulk layers of Nb 3 Ge were deposited on copper substrates at 900 0 C by the hydrogen reduction of the chlorides of niobium and germanium with resistive T/sub c/'s as high as 22.5 0 K and current densities up to 1.8 x 10 6 amp cm -2 at 13.8 0 K. A detailed description of the coating process as well as empirical correlations between deposition parameters and T/sub c/ is given. Quantitative chlorination of Nb was found to be possible at T approximately equal to 250 0 C and for T greater than 900 0 C extending the range of delivery rates below those obtainable by powder feeding of NbCl 5 . Coatings in the range of 10 to 60 μm thick have been produced with a typical deposition efficiency of 50 to 65 percent for mass flow rates of the order of 1 g of salt per minute. The superconducting transition temperature has been correlated with a parameter of the form mole ratio x dilution x Reynolds number 0.22, where mole ratio is defined by moles Nb:moles (Ge + O) in the gas stream, and dilution by moles gas:moles salt. In addition, the relationship between mole ratio and dilution which determines the phase produced (Nb 3 Ge or Nb 5 Ge 3 ) is defined over the region of major interest. Lattice spacings are presented over a range of T/sub c/'s, and microstructure and substrate adherence are discussed. (U.S.)

  8. Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs. ab initio calculations

    Science.gov (United States)

    Torres, V. J. B.; Hajj Hussein, R.; Pagès, O.; Rayson, M. J.

    2017-02-01

    We test a presumed ability behind the phenomenological percolation scheme used for the basic description of the multi-mode Raman spectra of mixed crystals at one dimension along the linear chain approximation, to determine, via the Raman intensities, the nature of the atom substitution, as to whether this is random or due to local clustering/anticlustering. For doing so, we focus on the model percolation-type GeySi1-y system characterized by six oscillators { 1 × ( G e - G e ) , 3 × ( G e - S i ) , 2 × ( S i - S i ) } and place the study around the critical compositions y ˜ (0.16, 0.71, and 0.84) corresponding to nearly matching of intensities between the like Raman modes from a given multiplet ( G e - S i triplet or S i - S i doublet). The interplay between the GeySi1-y Raman intensities predicted by the percolation scheme depending on a suitable order parameter κ of local clustering/anticlustering is found to be consistent with ab initio calculations of the GeySi1-y Raman spectra done with the Ab Initio Modeling PROgram code using large (64-, 216-, and 512-atoms) disordered cubic supercells matching the required ( y , κ ) values. The actual "percolation vs. ab initio" comparative insight at moderate/dilute-(Ge,Si) limits, with an emphasis on the κ -induced intra-bond transfer of oscillator strength, extends a pioneering one earlier achieved at an intermediate composition ( y ˜ 0.50) by using small (32-atom) supercells [O. Pagès et al., J. Appl. Phys. 114, 033513 (2013)], mainly concerned with the inter-bond transfer of oscillator strength, providing altogether a complete picture.

  9. High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

    International Nuclear Information System (INIS)

    Wang, Peng; Li, Xin; Liu, Hanhui; Lai, Shumei; Chen, Yuye; Xu, Yihong; Chen, Songyan; Li, Cheng; Huang, Wei; Tang, Dingliang

    2015-01-01

    High (1 1 1) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlO x interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (1 1 1) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100 μm.

  10. Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields

    International Nuclear Information System (INIS)

    Palmer, Martin John

    2001-01-01

    Silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) for high speed, high current applications are rapidly approaching the physical and financial limits of the technology. This opens opportunities for the incorporation of materials with intrinsically better transport characteristics. An alloy of silicon and germanium is one such material that is gaining much recognition as the active component of MOSFETs and as the secondary structures (such as the gate electrode). This work examines a batch of buried channel Si 0.64 Ge 0.36 p-MOSFETs, with a minimum effective length of 0.35 μm, under different bias conditions and at different temperatures. High current and transconductance enhancements are apparent at long gate lengths. The carrier mobility is up to a factor of 2.5 times that of silicon at room temperature and 7.5 times at 4 K. A clear trend of decreasing peak mobility with decreasing silicon cap thickness is evident. Simulations show that scattering caused by the roughness of the SiO 2 /Si interface dominates, rather than alloy scattering or Si/SiGe roughness, even for a buried channel. This scattering increases with the proximity of the carriers to the interface. An increase of interface trap density with decreasing cap thickness, demonstrates that segregated germanium exists some distance into the cap and interferes with the oxidation process. This will increase scattering through increased SiO 2 /Si roughness and increased trapped charge. The short channel, high field results are comparable or slightly worse than those of silicon due to lower saturation drift velocity. However, fitting to a drift-diffusion model shows an apparent increase in saturation velocity for short channels, especially at low temperatures. This effect correlates with the low field mobility and is greater for devices containing SiGe. This is an indication of velocity overshoot, which may enhance the performance of SiGe MOSFETs at deep submicron gate lengths. (author)

  11. Photoluminescence of highly compensated GaAs doped with high concentration of Ge

    Science.gov (United States)

    Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

    1999-12-01

    We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

  12. High temperature studies on scheelite and zircon type ThGeO4

    International Nuclear Information System (INIS)

    Patwe, S.J.; Achary, S.N.; Tyagi, A.K.

    2008-01-01

    The detailed structural analyses of two polymorphs of ThGeO 4 , namely, zircon (stable) and scheelite (metastable) types have been carried out from the in situ high temperature X-ray diffraction studies. Though both the polymorphs show positive thermal expansion, the coefficient of volume thermal expansion of scheelite modification is almost double of that for zircon modification. The anisotropies in thermal expansion behaviors are also different for the two modifications. The differences in thermal expansion behaviors have been explained from the differences in structural arrangements and anisotropy of the ThO 8 polyhedra in these two modifications. (author)

  13. Study of Ge loss during Ge condensation process

    International Nuclear Information System (INIS)

    Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

    2014-01-01

    Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface

  14. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  15. High pressure 129I Moessbauer studies of GeI4 molecular crystals

    International Nuclear Information System (INIS)

    Pasternak, M.P.; Taylor, R.D.

    1989-01-01

    The Moessbauer effect in 129 I in conjunction with Diamond-Anvil-Cell high pressure techniques was applied to investigate the high pressure phase(s) of the molecular crystal GeI 4 . The 129 I Quadrupole Interaction was the main probe for characterizing the intermolecular structural transformation with pressure. With increasing pressure, at about 15 GPAa, the onset of a partial molecular-association phase (HP1) is first observed. In HP1 two out of the four iodines strongly overlap to form linear chains of GeI 4 . The HP1 phase coexists with the low pressure (LP) molecular phase, but its population increases with increasing pressure. At P ∼20 GPa a second high pressure phase (HP2) is identified where all four iodines strongly overlap to form a three dimensional, fully molecular-associated structure. With increasing pressure and at P > 20 GPa, HP2 is the only phase up to P = 34 GPa, the highest pressure used. A significant hysteresis of the relative abundances with pressure is observed. The isomer shift of the HP2 and HP1 structures is considerably larger than that of the LP one. 11 refs., 3 figs

  16. High pressure 129I Moessbauer studies of GeI4 molecular crystals

    International Nuclear Information System (INIS)

    Pasternak, M.P.; Los Alamos National Lab.; Taylor, R.D.

    1990-01-01

    The Moessbauer effect in 129 I in cunjunction with Diamond-Anvil-Cell high pressure techniques was applied to investigate the high pressure phase(s) of the molecular crystal GeI 4 . The 129 I Quadrupole Interaction was the main probe for characterizing the intermolecular structural transformation with pressure. With increasing pressure, at about 15 GPa, the onset of a partial molecular-association phase (HP1) is first observed. In HP1 two out of the four iodines strongly overlap to form linear chains of GeI 4 . The HP1 phase coexists with the low pressure (LP) molecular phase, but its population increases with increasing pressure. At P≅20 GPa a second high pressure phase (HP2) is identified where all four iodines strongly overlap to form a three dimensional, fully molecular-associated structure. With increasing pressure and at P>20 GPa, HP2 is the only phase up to P=34 GPa, the highest pressure used. A significant hysteresis of the relative abundances with pressure is observed. The isomer shift of the HP2 and HP1 structures is considerably larger than that of the LP one. (orig.)

  17. A SiGe High Gain and Highly Linear F-Band Single-Balanced Subharmonic Mixer

    OpenAIRE

    Seyedhosseinzadeh, Neda; Nabavi, Abdolreza; Carpenter, Sona; He, Zhongxia Simon; Bao, Mingquan; Zirath, Herbert

    2017-01-01

    A compact, broadband, high gain, second-order active down-converter subharmonic mixer is demonstrated using a 130-nm SiGe BiCMOS technology. The mixer adopts a bottom-LO Gilbert topology, on-chip RF and LO baluns and two emitter-follower buffers to realize a high gain wideband operation in both RF and IF frequencies. The measured performance exhibits a flat conversion gain (CG) of about 11 dB from 90 to 130 GHz with an average LO power of +3 dBm and high 2LO-RF isolation better than 60 dB. Th...

  18. High $P\\perp$ spectra from Au+Au collisions at $\\sqrt{s_{NN}}$ = 130 GeV

    CERN Document Server

    Dunlop, J C

    2002-01-01

    We report on hadron production at high transverse momentum from Au+Au collisions at _/sNN = 130GeV, measured with the STAR detector at the Relativistic Heavy Ion Collider (RHIC). Preliminary negative hadron spectra up to p| relative to a reference from p + p collisions. Preliminary azimuthal anisotropies have been measured up to p| = 4.5 GeV/c, which are described well by a hydrodynamical calculation below 1.5 GeV/c, but show a significant deviation at higher p|. A preliminary ratio p/p has been measured by the STAR-RICH detector in the range p| = 2-2.5 GeV/c.

  19. Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

    Directory of Open Access Journals (Sweden)

    Jiabao Sun

    2015-01-01

    Full Text Available In recent years, germanium has attracted intensive interests for its promising applications in the microelectronics industry. However, to achieve high performance Ge channel devices, several critical issues still have to be addressed. Amongst them, a high quality gate stack, that is, a low defect interface layer and a dielectric layer, is of crucial importance. In this work, we first review the existing methods of interface engineering and gate dielectric engineering and then in more detail we discuss and compare three promising approaches (i.e., plasma postoxidation, high pressure oxidation, and ozone postoxidation. It has been confirmed that these approaches all can significantly improve the overall performance of the metal-oxide-semiconductor field effect transistor (MOSFET device.

  20. Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10 −5 A/cm 2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D it ) is estimated to be as low as ∼2 × 10 12  cm −2  eV −1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D it value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications

  1. Ge1−xSix on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    International Nuclear Information System (INIS)

    Lee, Chang-Chun; Hsieh, Chia-Ping; Huang, Pei-Chen; Cheng, Sen-Wen; Liao, Ming-Han

    2016-01-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge 1−x Si x alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge 1−x Si x alloys, namely, Ge 0.96 Si 0.04 , Ge 0.93 Si 0.07 , and Ge 0.86 Si 0.14 , are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge 1−x Si x alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge 0.86 Si 0.14 stressor within the device channel. Furthermore, the stresses (S yy ) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge 1−x Si x alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n-channel metal–oxide semiconductor field-effect transistor is investigated

  2. A high-sensitivity fiber-optic evanescent wave sensor with a three-layer structure composed of Canada balsam doped with GeO2.

    Science.gov (United States)

    Zhong, Nianbing; Zhao, Mingfu; Zhong, Lianchao; Liao, Qiang; Zhu, Xun; Luo, Binbin; Li, Yishan

    2016-11-15

    In this paper, we present a high-sensitivity polymer fiber-optic evanescent wave (FOEW) sensor with a three-layer structure that includes bottom, inter-, and surface layers in the sensing region. The bottom layer and inter-layer are POFs composed of standard cladding and the core of the plastic optical fiber, and the surface layer is made of dilute Canada balsam in xylene doped with GeO2. We examine the morphology of the doped GeO2, the refractive index and composition of the surface layer and the surface luminous properties of the sensing region. We investigate the effects of the content and morphology of the GeO2 particles on the sensitivity of the FOEW sensors by using glucose solutions. In addition, we examine the response of sensors incubated with staphylococcal protein A plus mouse IgG isotype to goat anti-mouse IgG solutions. Results indicate very good sensitivity of the three-layer FOEW sensor, which showed a 3.91-fold improvement in the detection of the target antibody relative to a conventional sensor with a core-cladding structure, and the novel sensor showed a lower limit of detection of 0.2ng/l and a response time around 320s. The application of this high-sensitivity FOEW sensor can be extended to biodefense, disease diagnosis, biomedical and biochemical analysis. Copyright © 2016 Elsevier B.V. All rights reserved.

  3. High thermoelectric potential of Bi{sub 2}Te{sub 3} alloyed GeTe-rich phases

    Energy Technology Data Exchange (ETDEWEB)

    Madar, Naor; Givon, Tom; Mogilyansky, Dmitry; Gelbstein, Yaniv [Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva (Israel)

    2016-07-21

    In an attempt to reduce our reliance on fossil fuels, associated with severe environmental effects, the current research is focused on the identification of the thermoelectric potential of p-type (GeTe){sub 1−x}(Bi{sub 2}Te{sub 3}){sub x} alloys, with x values of up to 20%. Higher solubility limit of Bi{sub 2}Te{sub 3} in GeTe, than previously reported, was identified around ∼9%, extending the doping potential of GeTe by the Bi{sub 2}Te{sub 3} donor dopant, for an effective compensation of the high inherent hole concentration of GeTe toward thermoelectrically optimal values. Around the solubility limit of 9%, an electronic optimization resulted in an impressive maximal thermoelectric figure of merit, ZT, of ∼1.55 at ∼410 °C, which is one of the highest ever reported for any p-type GeTe-rich alloys. Beyond the solubility limit, a Fermi Level Pinning effect of stabilizing the Seebeck coefficient was observed in the x = 12%–17% range, leading to stabilization of the maximal ZTs over an extended temperature range; an effect that was associated with the potential of the governed highly symmetric Ge{sub 8}Bi{sub 2}Te{sub 11} and Ge{sub 4}Bi{sub 2}Te{sub 7} phases to create high valence band degeneracy with several bands and multiple hole pockets on the Fermi surface. At this compositional range, co-doping with additional dopants, creating shallow impurity levels (in contrast to the deep lying level created by Bi{sub 2}Te{sub 3}), was suggested for further electronic optimization of the thermoelectric properties.

  4. Novel high resolution 125I brachytherapy source dosimetry using Ge-doped optical fibres

    International Nuclear Information System (INIS)

    Issa, Fatma; Hugtenburg, Richard P.; Nisbet, Andrew; Bradley, David A.

    2013-01-01

    The steep dose gradients close to brachytherapy sources limit the ability to obtain accurate measurements of dose. Here we use a novel high spatial resolution dosimeter to measure dose around a 125 I source and compare against simulations. Ge-doped optical fibres, used as thermoluminescent dosimeters, offer sub-mm spatial resolution, linear response from 10 cGy to >1 kGy and dose-rate independence. For a 125 I brachytherapy seed in a PMMA phantom, doses were obtained for source-dosimeter separations from 0.1 cm up to several cm, supported by EGSnrc/DOSRZznrc Monte Carlo simulations and treatment planning system data. The measurements agree with simulations to within 2.3%±0.3% along the transverse and perpendicular axes and within 3.0%±0.5% for measurements investigating anisotropy in angular dose distribution. Measured and Veriseed™ brachytherapy treatment planning system (TPS) values agreed to within 2.7%±0.5%. Ge-doped optical fibre dosimeters allow detailed dose mapping around brachytherapy sources, not least in situations of high dose gradient. - Highlights: • We evaluate fall-off in dose for distances from an 125 I source of 1 mm to 60 mm. • The TL of optical fibres accommodate high dose gradients and doses that reduce by a factor of 10 3 across the range of separations. • We verify measured values using DOSRZnrc Monte Carlo code simulations and the Variseed™ Treatment Planning System. • Measured radial and angular dose are obtained with ≤3% uncertainty

  5. Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

    OpenAIRE

    Chad A. Stephenson; Miriam Gillett-Kunnath; William A. O’Brien; Robert Kudrawiec; Mark A. Wistey

    2016-01-01

    Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect. By using a precursor gas with a Ge4C core, C can be preferentially incorporated in substitutional sites, suppressing interstitial and C cluster defects. We present a method of reproducible and upscalable gas synthesis of tetrakis(germyl)methane, or (H3Ge)4C, followed by the design of a hybrid gas/solid-source molecu...

  6. Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy.

    Science.gov (United States)

    Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Terziotti, Daniela; Bonera, Emiliano; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Spinella, Corrado; Nicotra, Giuseppe

    2012-02-03

    The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe.

  7. Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy

    International Nuclear Information System (INIS)

    Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Terziotti, Daniela; Bonera, Emiliano; Spinella, Corrado; Nicotra, Giuseppe

    2012-01-01

    The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe. (paper)

  8. Absolute peak detection efficiencies of a Ge(Li) detector for high gamma-ray energies

    International Nuclear Information System (INIS)

    Katagiri, Masaki

    1985-11-01

    Absolute peak detection efficiencies of a Ge(Li) detector for gamma-rays of 3.5 MeV to 12 MeV were measured using four (p,γ) reactions and a (n,γ) reaction. Two-line-method was used to obtaine peak detection efficiencies. The efficiencies with the both cases are agreed very well. Utilization of (n,γ) reaction is, therefore, effective for measuring these efficiencies, because high energy gamma-rays can be generated easily by using a neutron source. These results were applied to calibration of a gamma-ray standard source, emitting 6.13 MeV gamma-rays, and of intensities of 56 Co standard gamma-ray source. (author)

  9. High-energy γ-irradiation effect on physical ageing in Ge-Se glasses

    International Nuclear Information System (INIS)

    Golovchak, R.; Kozdras, A.; Kozyukhin, S.; Shpotyuk, O.

    2009-01-01

    Effect of Co 60 γ-irradiation on physical ageing in binary Ge x Se 100-x glasses (5 ≤ x ≤ 27) is studied using conventional differential scanning calorimetry method. It is shown, that high-energy irradiation leads to additional increase in the glass transition temperature and endothermic peak area near the glass transition region over the one induced by isochronal storage of these glasses at normal conditions. This γ-induced physical ageing is shown to be well-pronounced in Se-rich glasses (x < 20), while only negligible changes are recorded for glasses of 20 ≤ x ≤ 27 compositions. The effect under consideration is supposed to be associated with γ-activated structural relaxation of the glass network towards thermodynamic equilibrium of supercooled liquid.

  10. High-energy {gamma}-irradiation effect on physical ageing in Ge-Se glasses

    Energy Technology Data Exchange (ETDEWEB)

    Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202 Stryjska Str., Lviv, UA-79031 (Ukraine); Kozdras, A. [Department of Physics of Opole University of Technology, 75 Ozimska Str., Opole, PL-45370 (Poland); Department of Economy of Academy of Management and Administration in Opole, 18 Niedzialkowski Str., Opole, PL-45085 (Poland); Kozyukhin, S. [Institute of General and Inorganic Chemistry of RAS, Leninsky Pr. 31, Moscow 199991 (Russian Federation); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202 Stryjska Str., Lviv, UA-79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa, PL-42201 (Poland)], E-mail: shpotyuk@novas.lviv.ua

    2009-09-01

    Effect of Co{sup 60} {gamma}-irradiation on physical ageing in binary Ge{sub x}Se{sub 100-x} glasses (5 {<=} x {<=} 27) is studied using conventional differential scanning calorimetry method. It is shown, that high-energy irradiation leads to additional increase in the glass transition temperature and endothermic peak area near the glass transition region over the one induced by isochronal storage of these glasses at normal conditions. This {gamma}-induced physical ageing is shown to be well-pronounced in Se-rich glasses (x < 20), while only negligible changes are recorded for glasses of 20 {<=} x {<=} 27 compositions. The effect under consideration is supposed to be associated with {gamma}-activated structural relaxation of the glass network towards thermodynamic equilibrium of supercooled liquid.

  11. Efficiency correction for disk sources using coaxial High-Purity Ge detectors

    International Nuclear Information System (INIS)

    Chatani, Hiroshi.

    1993-03-01

    Efficiency correction factors for disk sources were determined by making use of closed-ended coaxial High-Purity Ge (HPGe) detectors, their relative efficiencies for a 3' 'x3' ' NaI(Tl) with the 1.3 MeV γ-rays were 30 % and 10 %, respectively. Parameters for the correction by mapping method were obtained systematically, using several monoenergetic (i.e. no coincidence summing loses) γ-ray sources produced by irradiation in the Kyoto University Reactor (KUR) core. These were found out that (1) the systematics of the Gaussian fitting parameters, which were calculated using the relative efficiency distributions of HPGe, to the γ-ray energies are recognized, (2) the efficiency distributions deviate from the Gaussian distributions outside of the radii of HPGe. (3) mapping method is a practical use in satisfactory accuracy, as the results in comparison with the disk source measurements. (author)

  12. High energy nuclear collisions in the few GeV/nucleon region: projectile and target fragmentation

    International Nuclear Information System (INIS)

    Schroeder, L.S.

    1980-06-01

    A general review of nucleon-nucleus and nucleus-nucleus collisions for incident energies <10 GeV/nucleon is presented. The division of these interactions into peripheral and central collisions is briefly discussed. Subjects treated include the following: target and projectile fragmentation systematics, production of exotic nuclear fragments, studies of multiparticle final states, total cross section measurements, results from an experiment that indicate the production of projectile fragments with an anomalously short reaction mean free path, high-energy particle production at backward angles beyond simple N-N kinematic limits, and recent results on backward particle emission in studies with the Berkeley streamer chamber. Both the particle and nuclear physics aspects that are present are considered. A brief discussion of future trends in this energy range ends the presentation. 65 references, 37 figures

  13. A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

    Science.gov (United States)

    Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

    2017-06-01

    In this paper, a new Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel (Ge_DUTFET) is proposed and investigated by Silvaco-Atlas simulation. The line tunneling perpendicular to channel and point tunneling parallel to channel simultaneously occur on both sides of the gate. The Ge is chosen as the source region material to increase the line tunneling current. The designed heterojunction between the Ge source and Si channel decreases the point tunneling barrier width to enhance the point tunneling current. And this heterojunction can also promote the Ge_DUTFET to occur point tunneling at the small gate voltage, which makes it obtain the smaller turn-on voltage. Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance. The simulation results reveal that Ge_DUTFET has the better performance compared with the Si_DUTFET. The on-state current and average subthreshold swing of Ge_DUTFET are 1.11 × 10-5A/μm and 35.1mV/dec respectively. The max cut-off frequency (fT) and gain bandwidth product (GBW) are 26.6 GHz and 16.6 GHz respectively. The fT and GBW of the Ge_DUTFET are respectively increased by ∼27.4% and ∼84.3% compared with the Si_DUTFET.

  14. Ge extraction from gasification fly ash

    Energy Technology Data Exchange (ETDEWEB)

    Oriol Font; Xavier Querol; Angel Lopez-Soler; Jose M. Chimenos; Ana I. Fernandez; Silvia Burgos; Francisco Garcia Pena [Institute of Earth Sciences ' Jaume Almera' , Barcelona (Spain)

    2005-08-01

    Water-soluble germanium species (GeS{sub 2}, GeS and hexagonal-GeO{sub 2}) are generated during coal gasification and retained in fly ash. This fact together with the high market value of this element and the relatively high contents in the fly ashes of the Puertollano Integrated Gasification in Combined Cycle (IGCC) plant directed our research towards the development of an extraction process for this element. Major objectives of this research was to find a low cost and environmentally suitable process. Several water based extraction tests were carried out using different Puertollano IGCC fly ash samples, under different temperatures, water/fly ash ratios, and extraction times. High Ge extraction yields (up to 84%) were obtained at room temperature (25{sup o}C) but also high proportions of other trace elements (impurities) were simultaneously extracted. Increasing the extraction temperature to 50, 90 and 150{sup o}C, Ge extraction yields were kept at similar levels, while reducing the content of impurities, the water/fly ash ratio and extraction time. The experimental data point out the influence of chloride, calcium and sulphide dissolutions on the Ge extraction. 16 refs., 9 figs., 6 tabs.

  15. High-Temperature Heat Capacity of Germanates Pr2Ge2O7 and Nd2Ge2O7 within 350-1000 K

    Science.gov (United States)

    Denisova, L. T.; Irtyugo, L. A.; Beletskii, V. V.; Belousova, N. V.; Denisov, V. M.

    2018-03-01

    Pr2Ge2O7 and Nd2Ge2O7 were obtained via solid-phase synthesis from Pr2O3 ( Nd2O3) and GeO2 with multistage firing in air within 1273-1473 K. A temperature effect on molar heat capacity of the oxide compounds was measured with a differential scanning calorimetry. Their thermodynamic properties were calculated from the C P = f( T) dependences.

  16. High Transverse Momentum Hadron Production in 400-GeV/c and 800-GeV/c Proton - Nucleon Collisions

    Energy Technology Data Exchange (ETDEWEB)

    Jaffe, David Edward [SUNY, Stony Brook

    1987-08-01

    Results of high transverse momentum hadron production in 400 Gev/c proton-proton and proton-deuteron and 800 Gev /c proton-proton collisions are presented in this dissertation. The transverse momentum range of the data was from 5.2 to 9.0 Gev/c for the 400 Gev/c collisions and from 3.6 to 11.0 Gev /c for the 800 Gev /c collisions; the data were centered around the proton-nucleon center-of-momentum production angle of 90°. Single pion invariant cross sections and particle ratios were measured at both energies and the unlike-sign dihadron correlation function was measured at the higher energy. The results are compared to previous experiments and the Lund model.

  17. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-12-05

    This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

  18. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    International Nuclear Information System (INIS)

    Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

    2008-01-01

    This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

  19. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

    2012-01-01

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  20. New sunflower seeds with high contents of phytosterols

    Directory of Open Access Journals (Sweden)

    Velasco Leonardo

    2014-11-01

    Full Text Available Dietary phytosterols have a positive nutritional impact because they contribute to reduce cholesterol levels in blood. Accordingly, foods rich in phytosterols are required in a healthy diet. Vegetable oils are the richest source of phytosterols in the diet, though sunflower oil has lower phytosterol content than other seed oils such as rapeseed and corn. Increasing phytosterol content in sunflower oil requires optimizing first selection procedures. In this way, the development of accurate methods for analyzing phytosterol content in seeds instead of oils has opened up recently the way for large-scale screening for this trait. Large variability for seed phytosterol content has been identified in sunflower germplasm, from which we have developed a line, IASP-18, with about twofold seed phytosterol content than conventional sunflower. The trait is expressed across environments. Genetic studies are underway to characterize its inheritance and assess the feasibility of introgressing genes for high phytosterol content into elite sunflower germplasm.

  1. Handling of high intensity proton beams at 12 GeV

    International Nuclear Information System (INIS)

    Takasaki, M.; Minakawa, M.; Yamanoi, Y.; Ieiri, M.; Kato, Y.; Ishii, H.; Suzuki, Y.; Suzuki, T.; Tanaka, K.H.

    1990-01-01

    A new counter experimental hall is now being constructed at the KEK (National Laboratory for High Energy Physics, Japan) 12 GeV Proton Synchrotron (KEK-PS). This hall will be completed by the end of 1989, immediately followed by magnet installation. The present report describes the new technical achievements employed at the hall. The most important and essential feature of the equipment is that the beam-handling system is maintenance-free, though in case of need, maintenance should be carried out quickly from a distant location in order to reduce the absorbed dose during the maintenance work. This paper is divided into three parts. The first part outlines the general design concept of the hall, focusing on the handling of high-intensity beams. The second part addresses the development of a quick-disconnect system, focusing on electric power, interlock signals, cooling water, pumping port, and vacuum flange. The third part describes the development of radiation-resistant instruments, focusing on polyimide magnets and cement magnets. (N.K.)

  2. Boron mediation on the growth of Ge quantum dots on Si (1 0 0) by ultra high vacuum chemical vapor deposition system

    International Nuclear Information System (INIS)

    Chen, P.S.; Pei, Z.; Peng, Y.H.; Lee, S.W.; Tsai, M.-J.

    2004-01-01

    Self-assembled Ge quantum dots (QDs) with boron mediation are grown on Si (1 0 0) by an industrial hot wall ultra-high-vacuum chemical vapor deposition (UHV/CVD) system with different growth temperatures and dopant gas flow rates. Diborane (B 2 H 6 ) gas is applied as a surfactant on the Si (1 0 0) prior to the growth of Ge QDs. Small dome and pyramid shaped Ge QDs are observed after boron treatment as compared to the hut shaped Ge cluster without boron pre-treatment at 525 and 550 deg. C. The Ge QDs have a typical base width and height of about 30 and 6 nm, respectively, and the density is about 2.5x10 10 cm -2 for the growth temperature of 525 deg. C. Through weakening the Si-H bond during the epitaxy growth and changing the stress field on the surface of the Si (1 0 0) buffer, boron mediation can modify the growth mode of Ge QDs. When the growth temperature is low (525-550 deg. C), the former factor is dominate, as the growth temperature is raised (600 deg. C), the latter parameter may play an important role on the formation of Ge QDs. Optical transition from Ge QDs is demonstrated from photoluminescence (PL) spectra. Furthermore, multifold Ge/Si layers are also carried out to enhance the PL intensity with first Ge layer treated by B 2 H 6 and avoid the generation of threading dislocations

  3. SiGe HBTs Optimization for Wireless Power Amplifier Applications

    Directory of Open Access Journals (Sweden)

    Pierre-Marie Mans

    2010-01-01

    Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

  4. CH 3 NH 3 PbI 3 /GeSe bilayer heterojunction solar cell with high performance

    Science.gov (United States)

    Hou, Guo-Jiao; Wang, Dong-Lin; Ali, Roshan; Zhou, Yu-Rong; Zhu, Zhen-Gang; Su, Gang

    2018-01-01

    Perovskite (CH3NH3PbI3) solar cells have made significant advances recently. In this paper, we propose a bilayer heterojunction solar cell comprised of a perovskite layer combining with a IV-VI group semiconductor layer, which can give a conversion efficiency even higher than the conventional perovskite solar cell. Such a scheme uses a property that the semiconductor layer with a direct band gap can be better in absorption of long wavelength light and is complementary to the perovskite layer. We studied the semiconducting layers such as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is the best, where the optical absorption efficiency in the perovskite/GeSe solar cell is dramatically increased. It turns out that the short circuit current density is enhanced 100% and the power conversion efficiency is promoted 42.7% (to a high value of 23.77%) larger than that in a solar cell with only single perovskite layer. The power conversion efficiency can be further promoted so long as the fill factor and open-circuit voltage are improved. This strategy opens a new way on developing the solar cells with high performance and practical applications.

  5. Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

    Science.gov (United States)

    Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

    2014-12-01

    High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

  6. GELATIO: a general framework for modular digital analysis of high-purity Ge detector signals

    International Nuclear Information System (INIS)

    Agostini, M; Pandola, L; Zavarise, P; Volynets, O

    2011-01-01

    GELATIO is a new software framework for advanced data analysis and digital signal processing developed for the GERDA neutrinoless double beta decay experiment. The framework is tailored to handle the full analysis flow of signals recorded by high purity Ge detectors and photo-multipliers from the veto counters. It is designed to support a multi-channel modular and flexible analysis, widely customizable by the user either via human-readable initialization files or via a graphical interface. The framework organizes the data into a multi-level structure, from the raw data up to the condensed analysis parameters, and includes tools and utilities to handle the data stream between the different levels. GELATIO is implemented in C++. It relies upon ROOT and its extension TAM, which provides compatibility with PROOF, enabling the software to run in parallel on clusters of computers or many-core machines. It was tested on different platforms and benchmarked in several GERDA-related applications. A stable version is presently available for the GERDA Collaboration and it is used to provide the reference analysis of the experiment data.

  7. High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

    Science.gov (United States)

    Adnane, L.; Dirisaglik, F.; Cywar, A.; Cil, K.; Zhu, Y.; Lam, C.; Anwar, A. F. M.; Gokirmak, A.; Silva, H.

    2017-09-01

    High-temperature characterization of the thermoelectric properties of chalcogenide Ge2Sb2Te5 (GST) is critical for phase change memory devices, which utilize self-heating to quickly switch between amorphous and crystalline states and experience significant thermoelectric effects. In this work, the electrical resistivity and Seebeck coefficient are measured simultaneously as a function of temperature, from room temperature to 600 °C, on 50 nm and 200 nm GST thin films deposited on silicon dioxide. Multiple heating and cooling cycles with increasingly maximum temperature allow temperature-dependent characterization of the material at each crystalline state; this is in contrast to continuous measurements which return the combined effects of the temperature dependence and changes in the material. The results show p-type conduction (S > 0), linear S(T), and a positive Thomson coefficient (dS/dT) up to melting temperature. The results also reveal an interesting linearity between dS/dT and the conduction activation energy for mixed amorphous-fcc GST, which can be used to estimate one parameter from the other. A percolation model, together with effective medium theory, is adopted to correlate the conductivity of the material with average grain sizes obtained from XRD measurements. XRD diffraction measurements show plane-dependent thermal expansion for the cubic and hexagonal phases.

  8. GELATIO: a general framework for modular digital analysis of high-purity Ge detector signals

    Science.gov (United States)

    Agostini, M.; Pandola, L.; Zavarise, P.; Volynets, O.

    2011-08-01

    GELATIO is a new software framework for advanced data analysis and digital signal processing developed for the GERDA neutrinoless double beta decay experiment. The framework is tailored to handle the full analysis flow of signals recorded by high purity Ge detectors and photo-multipliers from the veto counters. It is designed to support a multi-channel modular and flexible analysis, widely customizable by the user either via human-readable initialization files or via a graphical interface. The framework organizes the data into a multi-level structure, from the raw data up to the condensed analysis parameters, and includes tools and utilities to handle the data stream between the different levels. GELATIO is implemented in C++. It relies upon ROOT and its extension TAM, which provides compatibility with PROOF, enabling the software to run in parallel on clusters of computers or many-core machines. It was tested on different platforms and benchmarked in several GERDA-related applications. A stable version is presently available for the GERDA Collaboration and it is used to provide the reference analysis of the experiment data.

  9. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    Science.gov (United States)

    Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

    2008-07-01

    Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

  10. Revisiting local structural changes in GeO2 glass at high pressure.

    Science.gov (United States)

    Dong, Juncai; Yao, HuRong; Guo, Zhiying; Jia, Quanjie; Wang, Yan; An, Pengfei; Gong, Yu; Liang, Yaxiang; Chen, Dongliang

    2017-09-18

    Despite the great importance in fundamental and industrial fields, understanding structural changes for pressure-induced polyamorphism in network-forming glasses remains a formidable challenge. Here, we revisited the local structural transformations in GeO2 glass up to 54 GPa using x-ray absorption fine structure (XAFS) spectroscopy via a combination diamond anvil cell and polycapillary half-lens. Three polyamorphic transitions can be clearly identified by XAFS structure refinement. First, a progressive increase of the nearest Ge-O distance and bond disorder to a maximum at ~5-16 GPa, in the same pressure region of previously observed tetrahedral-octahedral transformation. Second, a markedly decrease of the nearest Ge-O distance at ~16-22.6 GPa but a slight increase at ~22.6-32.7 GPa, with a concomitant decrease of bond disorder. This stage can be related to a second-order-like transition from less dense to dense octahedral glass. Third, another decrease in the nearest Ge-O distance at ~32.7-41.4 GPa but a slight increase up to 54 GPa, synchronized with a gradual increase of bond disorder. This stage provides strong evidence for ultrahigh-pressure polyamorphism with coordination number >6. Furthermore, cooperative modification is observed in more distant shells. Those results provide a unified local structural picture for elucidating the polyamorphic transitions and densification process in GeO2 glass. © 2017 IOP Publishing Ltd.

  11. Revisiting local structural changes in GeO2 glass at high pressure.

    Science.gov (United States)

    Dong, Juncai; Yao, Hurong; Guo, Zhiying; Jia, Quanjie; Wang, Yan; An, Pengfei; Gong, Yu; Liang, Yaxiang; Chen, Dongliang

    2017-10-20

    Despite the great importance in fundamental and industrial fields, understanding structural changes for pressure-induced polyamorphism in network-forming glasses remains a formidable challenge. Here, we revisited the local structural transformations in GeO 2 glass up to 54 GPa using x-ray absorption fine structure (XAFS) spectroscopy via a combination diamond anvil cell and polycapillary half-lens. Three polyamorphic transitions can be clearly identified by XAFS structure refinement. First, a progressive increase of the nearest Ge-O distance and bond disorder to a maximum at ~5-16 GPa, in the same pressure region of previously observed tetrahedral-octahedral transformation. Second, a marked decrease of the nearest Ge-O distance at ~16-22.6 GPa but a slight increase at ~22.6-32.7 GPa, with a concomitant decrease of bond disorder. This stage can be related to a second-order-like transition from less dense to dense octahedral glass. Third, another decrease in the nearest Ge-O distance at ~32.7-41.4 GPa but a slight increase up to 54 GPa, synchronized with a gradual increase of bond disorder. This stage provides strong evidence for ultrahigh-pressure polyamorphism with coordination number  >6. Furthermore, cooperative modification is observed in more distant shells. Those results provide a unified local structural picture for elucidating the polyamorphic transitions and densification process in GeO 2 glass.

  12. Structure of Ge(100) surfaces for high-efficiency photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Olson, J.M.; McMahon, W.E. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    While much is known about the Ge(100) surface in a UHV/MBE environment, little has been published about this surface in an MOCVD environment. The main objective of this study is to determine the structure of the surface of Ge substrates in the typical MOCVD reactor immediately prior to and following the heteronucleation of GaAs and other lattice-matched III-V alloys, and to determine the conditions necessary for the growth of device-quality epilayers. In this paper the authors present the first STM images of the MOCVD-prepared Ge surfaces. Although many of the observed features are very similar to UHV- or MBE-prepared surfaces, there are distinct and important differences. For example, while the As-terminated surfaces for MBE-Ge and MOCVD-Ge are virtually identical, the AsH{sub 3}-treated surfaces in an MOCVD reactor are quite different. The terrace reconstruction is rotated by {pi}/2, and significant step bunching or faceting is also observed. Time-dependent RD kinetic studies also reveal, for the first time, several interesting features: the transition rate from an As-terminated (1 x 2) terrace reconstruction to a stable AsH{sub 3}-annealed surface is a function of the substrate temperature, substrate miscut from (100) and AsH{sub 3} partial pressure, and, for typical prenucleation conditions, is relatively slow. These results explain many of the empirically derived nucleation conditions that have been devised by numerous groups.

  13. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ogawa, Shingo [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Yoshigoe, Akitaka; Teraoka, Yuden [Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  14. MSSM with mh = 125 GeV in high-scale gauge mediation

    International Nuclear Information System (INIS)

    Zheng, Sibo

    2014-01-01

    After the discovery of an SM-like Higgs with m h = 125 GeV, it is increasingly urgent to explore a solution to the hierarchy problem. In the context of MSSM from gauge-mediated SUSY breaking, the lower bound on the gluino mass suggests that the messenger scale M is probably large if the magnitude of Λ ∝ 100 TeV. In this paper, we study the 5 + 5 model with M ∝ 10 8 -10 12 GeV and Λ ≅ 100 TeV. For moderate Higgs C messenger coupling, a viable model will be shown with moderate fine tuning. In this model, μ ∝ 800 GeV, and B μ nearly vanishes at the input scale, which can be constructed in a microscopic model. (orig.)

  15. High-speed Si/GeSi hetero-structure Electro Absorption Modulator.

    Science.gov (United States)

    Mastronardi, L; Banakar, M; Khokhar, A Z; Hattasan, N; Rutirawut, T; Bucio, T Domínguez; Grabska, K M; Littlejohns, C; Bazin, A; Mashanovich, G; Gardes, F Y

    2018-03-19

    The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.

  16. Ge{sub 1−x}Si{sub x} on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang-Chun, E-mail: changchunlee@cycu.edu.tw [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Hsieh, Chia-Ping [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China); Huang, Pei-Chen; Cheng, Sen-Wen [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Liao, Ming-Han [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China)

    2016-03-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge{sub 1−x}Si{sub x} alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge{sub 1−x}Si{sub x} alloys, namely, Ge{sub 0.96}Si{sub 0.04}, Ge{sub 0.93}Si{sub 0.07}, and Ge{sub 0.86}Si{sub 0.14}, are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge{sub 1−x}Si{sub x} alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge{sub 0.86}Si{sub 0.14} stressor within the device channel. Furthermore, the stresses (S{sub yy}) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge{sub 1−x}Si{sub x} alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n

  17. High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.

    Science.gov (United States)

    Klementová, Mariana; Palatinus, Lukás; Novotný, Filip; Fajgar, Radek; Subrt, Jan; Drínek, Vladislav

    2013-06-01

    Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.

  18. Method for preparing high transition temperature Nb.sub.3 Ge superconductors

    Science.gov (United States)

    Newkirk, Lawrence R.; Valencia, Flavio A.

    1977-01-01

    Bulk coatings of Nb.sub.3 Ge superconductors having transition temperatures in excess of 20 K are readily formed by a chemical vapor deposition technique involving the coreduction of NbCl.sub.5 and GeCl.sub.4 in the presence of hydrogen. The NbCl.sub.5 vapor may advantageously be formed quantitatively in the temperature range of about 250.degree. to 260.degree. C by the chlorination of Nb metal provided the partial pressure of the product NbCl.sub.5 vapor is maintained at or below about 0.1 atm.

  19. Study of events with a high transverse momentum particle at proton-proton interactions with 63 GeV c.m. energy

    International Nuclear Information System (INIS)

    Panter, M.

    1982-01-01

    In proton-proton interactions at a c.m. energy of 63 GeV events with an identified high transverse momentum particle were studied. The inclusive invariant cross section for the production of charged pions was measured in the transverse momentum range from 3 to 13 GeV/c. (orig.) [de

  20. N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.

    Science.gov (United States)

    Fang, Yung-Chin; Chen, Kuen-Yi; Hsieh, Ching-Heng; Su, Chang-Chia; Wu, Yung-Hsien

    2015-12-09

    Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. The capability of the surface passivation was evidenced by the low interface trap density (D(it)) of 1.62 × 10(11) cm(-2) eV(-1), which is primarily due to the formation of Ge-O and Sn-O bonds at the surface by high density/reactivity oxygen radicals that effectively suppress dangling bonds and decrease gap states. The good D(it) not only makes tiny frequency dispersion in the characterization of GeSn MOS capacitors, but results in GeSn N-MOSFETs with outstanding peak electron mobility as high as 518 cm(2)/(V s) which outperforms other devices reported in the literature due to reduced undesirable carrier scattering. In addition, the GeSn N-MOSFETs also exhibit promising characteristics in terms of acceptable subthreshold swing of 156 mV/dec and relatively large I(ON)/I(OFF) ratio more than 4 orders. Moreover, the robust reliability in terms small V(t) variation against high field stress attests the feasibility of using the O2 plasma-treated passivation to advanced GeSn technology.

  1. Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Loh Ter-Hoe

    2007-01-01

    Full Text Available AbstractSi/Si0.66Ge0.34coupled quantum well (CQW structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD system. The samples were characterized using high resolution x-ray diffraction (HRXRD, cross-sectional transmission electron microscopy (XTEM and photoluminescence (PL spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

  2. Atomic mixing effects on high fluence Ge implantation into Si at 40 keV

    International Nuclear Information System (INIS)

    Gras-Marti, A.; Jimenez-Rodriguez, J.J.; Peon-Fernandez, J.; Rodriguez-Vidal, M.; Tognetti, N.P.; Carter, G.; Nobes, M.J.; Armour, D.G.

    1982-01-01

    Ion implanted profiles of 40 keV Ge + into Si at fluences ranging from approx. equal to 10 15 ions/cm 2 up to saturation have been measured using the RBS technique. The profiles compare well with the predictions of an analytical model encompasing sputter erosion plus atomic relocation. (orig.)

  3. Na2TiGeO5: Crystal structure stability at low temperature and high pressure

    DEFF Research Database (Denmark)

    Waskowska, A.; Gerward, Leif; Olsen, J.S.

    2008-01-01

    The temperature evolution of the lattice parameters measured from 295 to 125 K exhibits a small instability below T-c approximate to 278 K, indicating ferroelastic properties of Na2TiGeO5. The behavior is related to the specific crystal structure built of polyhedral layers with shared TiO5 pyrami...

  4. In situ observation of low temperature growth of Ge on Si(1 1 1) by reflection high energy electron diffraction

    International Nuclear Information System (INIS)

    Grimm, Andreas; Fissel, Andreas; Bugiel, Eberhard; Wietler, Tobias F.

    2016-01-01

    Highlights: • Investigation of the initial stages of epitaxial growth of Ge on Si(1 1 1) in situ by RHEED. • Impact of growth temperature on strain evolution for temperatures between 200 °C and 400 °C. • Epitaxy with a high degree of structural perfection already at growth temperature of 200 °C. • Ordered interfacial dislocation networks already at 200 °C. • Tensile strain contribution of Si(1 1 1) 7 × 7-surface reconstruction to strain relaxation process for epitaxial growth of Ge. - Abstract: In this paper we investigate the initial stages of epitaxial growth of Ge on Si(1 1 1) and the impact of growth temperature on strain evolution in situ by reflection high energy electron diffraction (RHEED) for temperatures between 200 °C and 400 °C. The change in surface morphology from a flat wetting layer to subsequent islanding that is characteristic for Stranski–Krastanov growth is monitored by spot intensity analysis. The corresponding critical layer thickness is determined to 3.1 < d c < 3.4 ML. In situ monitoring of the strain relaxation process reveals a contribution of the Si(1 1 1) 7 × 7-surface reconstruction to the strain relaxation process. High resolution transmission electron microscopy confirms that the Ge islands exhibit a high degree of structural perfection and an ordered interfacial misfit dislocation network already at a growth temperature of 200 °C is established. The temperature dependency of island shape, density and height is characterized by atomic force microscopy and compared to the RHEED investigations.

  5. Highly accurate determination of relative gamma-ray detection efficiency for Ge detector and its application

    International Nuclear Information System (INIS)

    Miyahara, H.; Mori, C.; Fleming, R.F.; Dewaraja, Y.K.

    1997-01-01

    When quantitative measurements of γ-rays using High-Purity Ge (HPGe) detectors are made for a variety of applications, accurate knowledge of oy-ray detection efficiency is required. The emission rates of γ-rays from sources can be determined quickly in the case that the absolute peak efficiency is calibrated. On the other hand, the relative peak efficiencies can be used for determination of intensity ratios for plural samples and for comparison to the standard source. Thus, both absolute and relative detection efficiencies are important in use of γ-ray detector. The objective of this work is to determine the relative gamma-ray peak detection efficiency for an HPGe detector with the uncertainty approaching 0.1% . We used some nuclides which emit at least two gamma-rays with energies from 700 to 2400 keV for which the relative emission probabilities are known with uncertainties much smaller than 0.1%. The relative peak detection efficiencies were calculated from the measurements of the nuclides, 46 Sc, 48 Sc, 60 Co and 94 Nb, emitting two γ- rays with the emission probabilities of almost unity. It is important that various corrections for the emission probabilities, the cascade summing effect, and the self-absorption are small. A third order polynomial function on both logarithmic scales of energy and efficiency was fitted to the data, and the peak efficiency predicted at certain energy from covariance matrix showed the uncertainty less than 0.5% except for near 700 keV. As an application, the emission probabilities of the 1037.5 and 1212.9 keV γ-rays for 48 Sc were determined using the function of the highly precise relative peak efficiency. Those were 0.9777+0,.00079 and 0.02345+0.00017 for the 1037.5 and 1212.9 keV γ-rays, respectively. The sum of these probabilities is close to unity within the uncertainty which means that the certainties of the results are high and the accuracy has been improved considerably

  6. Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

    International Nuclear Information System (INIS)

    Chang, Yongwei; Zhang, Miao; Deng, Chuang; Men, Chuanling; Chen, Da; Zhu, Lei; Yu, Wenjie; Wei, Xing; Di, Zengfeng; Wang, Xi

    2015-01-01

    Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10 17 cm −2 , the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10 17 cm −2 . • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10 17 cm −2 , the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10 17 cm −2 H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF 6 plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era

  7. Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Yongwei; Zhang, Miao [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Deng, Chuang; Men, Chuanling [School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China); Chen, Da [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Zhu, Lei; Yu, Wenjie; Wei, Xing [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Di, Zengfeng, E-mail: zfdi@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Xi [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2015-08-15

    Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10{sup 17} cm{sup −2}, the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10{sup 17} cm{sup −2}. • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10{sup 17} cm{sup −2}, the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10{sup 17} cm{sup −2} H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF{sub 6} plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era.

  8. High luminosity (1--4) GeV, cw polarized electron beams -Great expectations for hardronic physics-

    International Nuclear Information System (INIS)

    Huberts, P.K.A.d.W.

    1992-01-01

    In hadronic physics several key topics are in focus: high-momentum nucleons in nuclei, nucleon-nucleon correlations, pion production form factors from the free- and the bound nucleon, meson fields and the properties of baryon-resonances in the nuclear medium. New tools of unprecedented quality to investigate this physics will soon become available with commissioning of the new facilities in Europe and the US that deliver continuous wave beams of (polarized) electrons with energy ranging from ∼1 GeV up to ∼5 GeV. With the recent empirical observations as a starting point I will discuss some selected opportunities that the new facilities offer for hadronic physics

  9. Shedding Light on Filovirus Infection with High-Content Imaging

    Directory of Open Access Journals (Sweden)

    Rekha G. Panchal

    2012-08-01

    Full Text Available Microscopy has been instrumental in the discovery and characterization of microorganisms. Major advances in high-throughput fluorescence microscopy and automated, high-content image analysis tools are paving the way to the systematic and quantitative study of the molecular properties of cellular systems, both at the population and at the single-cell level. High-Content Imaging (HCI has been used to characterize host-virus interactions in genome-wide reverse genetic screens and to identify novel cellular factors implicated in the binding, entry, replication and egress of several pathogenic viruses. Here we present an overview of the most significant applications of HCI in the context of the cell biology of filovirus infection. HCI assays have been recently implemented to quantitatively study filoviruses in cell culture, employing either infectious viruses in a BSL-4 environment or surrogate genetic systems in a BSL-2 environment. These assays are becoming instrumental for small molecule and siRNA screens aimed at the discovery of both cellular therapeutic targets and of compounds with anti-viral properties. We discuss the current practical constraints limiting the implementation of high-throughput biology in a BSL-4 environment, and propose possible solutions to safely perform high-content, high-throughput filovirus infection assays. Finally, we discuss possible novel applications of HCI in the context of filovirus research with particular emphasis on the identification of possible cellular biomarkers of virus infection.

  10. Pressure-induced drastic collapse of a high oxygen coordination shell in quartz-like α-GeO2

    International Nuclear Information System (INIS)

    Dong, Juncai; Zhang, Xiaoli; Wu, Ziyu; Chen, Dongliang; Zhang, Qian; Wu, Ye; Wu, Xiang

    2014-01-01

    With the combination of a single crystal diamond anvil cell and a polycapillary half-lens, the local structural evolution around germanium in tetrahedrally networked quartz-like α-GeO 2 has been investigated using extended x-ray absorption fine structure spectroscopy of up to 14 GPa by multiple-scattering analysis method. While the first shell Ge–O bond distances show a slight contraction with increasing pressure, the third shell Ge–O bond distances are found to decrease dramatically. The sluggish lengthening of the first shell Ge–O bond distances, initiated by coordination increase from fourfold to sixfold, occurs in the 7–14 GPa range just when the third shell Ge–O bond distances fall in the region of the second shell Ge–Ge bond distances. Moreover, these features are accompanied by the closing of intertetrahedral Ge–O–Ge angles and the opening of two intratetrahedral O–Ge–O angles, whose topological configuration surprisingly exhibits a helical chirality along the c axis that is opposite to the double helices of the corner-linked GeO 4 tetrahedra. These results suggest that the high-pressure phase transitions in quartz and quartz-like materials could be associated with a structural instability that is driven by the drastic collapse of the next-nearest-neighbour anion shell, which is consistent with the emergence of high-symmetry anion sublattice. Our findings provide crucial insights into the densification mechanisms of quartz-like oxides, which would have broad implications for our understanding of the metastability of various post-quartz crystalline phases and pressure-induced amorphization. (paper)

  11. Denuded zone in Czochralski silicon wafer with high carbon content

    International Nuclear Information System (INIS)

    Chen Jiahe; Yang Deren; Ma Xiangyang; Que Duanlin

    2006-01-01

    The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 deg. C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 deg. C. Also, the DZs above 15 μm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits

  12. Denuded zone in Czochralski silicon wafer with high carbon content

    Science.gov (United States)

    Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Que, Duanlin

    2006-12-01

    The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 °C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 °C. Also, the DZs above 15 µm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits.

  13. Single and double electron capture in collisions of highly ionized, decelerated Ge ions with Ne

    International Nuclear Information System (INIS)

    Stoehlker, T.; Kozhuharov, C.; Mokler, P.H.; Olson, R.E.; Stachura, Z.; Warczak, A.

    1992-03-01

    Experimental cross-sections for non-radiative single and double electron capture from Ne target into H-like Ge ions at low intermediate collision energies (4-12) MeV/u are presented. The results are compared with theoretical calculations and an empirical scaling rule. Information concerning the impact parameter dependence of electron capture is extracted using classical trajectory Monte Carlo calculations. (orig.)

  14. Content

    DEFF Research Database (Denmark)

    Keiding, Tina Bering

    secondary levels. In subject matter didactics, the question of content is more developed, but it is still mostly confined to teaching on lower levels. As for higher education didactics, discussions on selection of content are almost non-existent on the programmatic level. Nevertheless, teachers are forced...... curriculum, in higher education, and to generate analytical categories and criteria for selection of content, which can be used for systematic didactical reflection. The larger project also concerns reflection on and clarification of the concept of content, including the relation between content at the level......Aim, content and methods are fundamental categories of both theoretical and practical general didactics. A quick glance in recent pedagogical literature on higher education, however, reveals a strong preoccupation with methods, i.e. how teaching should be organized socially (Biggs & Tang, 2007...

  15. Information management for high content live cell imaging

    Directory of Open Access Journals (Sweden)

    White Michael RH

    2009-07-01

    Full Text Available Abstract Background High content live cell imaging experiments are able to track the cellular localisation of labelled proteins in multiple live cells over a time course. Experiments using high content live cell imaging will generate multiple large datasets that are often stored in an ad-hoc manner. This hinders identification of previously gathered data that may be relevant to current analyses. Whilst solutions exist for managing image data, they are primarily concerned with storage and retrieval of the images themselves and not the data derived from the images. There is therefore a requirement for an information management solution that facilitates the indexing of experimental metadata and results of high content live cell imaging experiments. Results We have designed and implemented a data model and information management solution for the data gathered through high content live cell imaging experiments. Many of the experiments to be stored measure the translocation of fluorescently labelled proteins from cytoplasm to nucleus in individual cells. The functionality of this database has been enhanced by the addition of an algorithm that automatically annotates results of these experiments with the timings of translocations and periods of any oscillatory translocations as they are uploaded to the repository. Testing has shown the algorithm to perform well with a variety of previously unseen data. Conclusion Our repository is a fully functional example of how high throughput imaging data may be effectively indexed and managed to address the requirements of end users. By implementing the automated analysis of experimental results, we have provided a clear impetus for individuals to ensure that their data forms part of that which is stored in the repository. Although focused on imaging, the solution provided is sufficiently generic to be applied to other functional proteomics and genomics experiments. The software is available from: fhttp://code.google.com/p/livecellim/

  16. Method for creating high carbon content products from biomass oil

    Science.gov (United States)

    Parker, Reginald; Seames, Wayne

    2012-12-18

    In a method for producing high carbon content products from biomass, a biomass oil is added to a cracking reactor vessel. The biomass oil is heated to a temperature ranging from about 100.degree. C. to about 800.degree. C. at a pressure ranging from about vacuum conditions to about 20,700 kPa for a time sufficient to crack the biomass oil. Tar is separated from the cracked biomass oil. The tar is heated to a temperature ranging from about 200.degree. C. to about 1500.degree. C. at a pressure ranging from about vacuum conditions to about 20,700 kPa for a time sufficient to reduce the tar to a high carbon content product containing at least about 50% carbon by weight.

  17. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    International Nuclear Information System (INIS)

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Vincent, B.; Gencarelli, F.; Clarysse, T.; Vandervorst, W.; Caymax, M.; Loo, R.; Jensen, A.; Petersen, D.H.; Zaima, S.

    2012-01-01

    We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge 1-x Sn x layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge 1-x Sn x layers. We achieved the growth of a fully strained Ge 0.922 Sn 0.078 layer on Ge with a Ga concentration of 5.5 × 10 19 /cm 3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge 1-x Sn x layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge 1-x Sn x epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge 0.950 Sn 0.050 layer annealed at 600°C for 1 min is 3.6 times less than that of the Ga-doped Ge/Ge sample. - Highlights: ► Heavy Ga-doping into fully strained GeSn layers without the introduction of dislocations ► The uniform Ga depth profile allowed the introduction of Sn ► The decrease in resistivity with an increase in the activation level of Ga was caused by the introduction of Sn

  18. The aluminium content of infant formulas remains too high.

    Science.gov (United States)

    Chuchu, Nancy; Patel, Bhavini; Sebastian, Blaise; Exley, Christopher

    2013-10-08

    Recent research published in this journal highlighted the issue of the high content of aluminium in infant formulas. The expectation was that the findings would serve as a catalyst for manufacturers to address a significant problem of these, often necessary, components of infant nutrition. It is critically important that parents and other users have confidence in the safety of infant formulas and that they have reliable information to use in choosing a product with a lower content of aluminium. Herein, we have significantly extended the scope of the previous research and the aluminium content of 30 of the most widely available and often used infant formulas has been measured. Both ready-to-drink milks and milk powders were subjected to microwave digestion in the presence of 15.8 M HNO3 and 30% w/v H2O2 and the aluminium content of the digests was measured by TH GFAAS. Both ready-to-drink milks and milk powders were contaminated with aluminium. The concentration of aluminium across all milk products ranged from ca 100 to 430 μg/L. The concentration of aluminium in two soya-based milk products was 656 and 756 μg/L. The intake of aluminium from non-soya-based infant formulas varied from ca 100 to 300 μg per day. For soya-based milks it could be as high as 700 μg per day. All 30 infant formulas were contaminated with aluminium. There was no clear evidence that subsequent to the problem of aluminium being highlighted in a previous publication in this journal that contamination had been addressed and reduced. It is the opinion of the authors that regulatory and other non-voluntary methods are now required to reduce the aluminium content of infant formulas and thereby protect infants from chronic exposure to dietary aluminium.

  19. Engineering properties for high kitchen waste content municipal solid waste

    Directory of Open Access Journals (Sweden)

    Wu Gao

    2015-12-01

    Full Text Available Engineering properties of municipal solid waste (MSW depend largely on the waste's initial composition and degree of degradation. MSWs in developing countries usually have a high kitchen waste content (called HKWC MSW. After comparing and analyzing the laboratory and field test results of physical composition, hydraulic properties, gas generation and gas permeability, and mechanical properties for HKWC MSW and low kitchen waste content MSW (called LKWC MSW, the following findings were obtained: (1 HKWC MSW has a higher initial water content (IWC than LKWC MSW, but the field capacities of decomposed HKWC and LKWC MSWs are similar; (2 the hydraulic conductivity and gas permeability for HKWC MSW are both an order of magnitude smaller than those for LKWC MSW; (3 compared with LKWC MSW, HKWC MSW has a higher landfill gas (LFG generation rate but a shorter duration and a lower potential capacity; (4 the primary compression feature for decomposed HKWC MSW is similar to that of decomposed LKWC MSW, but the compression induced by degradation of HKWC MSW is greater than that of LKWC MSW; and (5 the shear strength of HKWC MSW changes significantly with time and strain. Based on the differences of engineering properties between these two kinds of MSWs, the geo-environmental issues in HKWC MSW landfills were analyzed, including high leachate production, high leachate mounds, low LFG collection efficiency, large settlement and slope stability problem, and corresponding advice for the management and design of HKWC MSW landfills was recommended.

  20. Liquid alternative diesel fuels with high hydrogen content

    Energy Technology Data Exchange (ETDEWEB)

    Hancsok, Jenoe; Varga, Zoltan; Eller, Zoltan; Poelczmann, Gyoergy [Pannonia Univ., Veszprem (Hungary). MOL Dept. of Hydrocarbon Processing; Kasza, Tamas [MOL Hungarian Oil and Gas Plc., Szazhalombatta (Hungary)

    2013-06-01

    Mobility is a keystone of the sustainable development. In the operation of the vehicles as the tools of mobility internal combustion engines, so thus Diesel engines will play a remarkable role in the next decades. Beside fossil fuels - used for power these engines - liquid alternative fuels have higher and higher importance, because of their known advantages. During the presentation the categorization possibilities based on the chronology of their development and application will be presented. The importance of fuels with high hydrogen content will be reviewed. Research and development activity in the field of such kind of fuels will be presented. During this developed catalytic systems and main performance properties of the product will be presented which were obtained in case of biogasoils produced by special hydrocracking of natural triglycerides and in case of necessity followed by isomerization; furthermore in case of synthetic biogasoils obtained by the isomerization hydrocracking of Fischer-Tropsch paraffins produced from biomass based synthesis gas. Excellent combustion properties (cetane number > 65-75), good cold flow properties and reduced harmful material emission due to the high hydrogen content (C{sub n}H{sub 2n+2}) are highlighted. Finally production possibilities of linear and branched paraffins based on lignocelluloses are briefly reviewed. Summarizing it was concluded that liquid hydrocarbons with high isoparaffin content are the most suitable fuels regarding availability, economical and environmental aspects, namely the sustainable development. (orig.)

  1. Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

    International Nuclear Information System (INIS)

    Takagi, Shinichi; Tezuka, T.; Irisawa, T.; Nakaharai, S.; Maeda, T.; Numata, T.; Ikeda, K.; Sugiyama, N.

    2006-01-01

    Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review our recent results on high hole mobility p-MOSFETs using global/local SiGe or Ge channels. There are two directions for introducing SiGe or Ge channels into Si CMOS platform. One is to use SiGe or Ge global substrates and the other is to form SiGe or Ge-channel regions locally on Si wafers. In both cases, the Ge condensation technique, where Ge-channel layers are formed by oxidizing SiGe films on SOI substrates, are effectively utilized. As for the global technologies, ultrathin GOI substrates are prepared and used to fabricate high mobility GOI p-MOSFETs. As for the local technologies, SGOI or GOI channels are formed locally in the active area of p-MOSFETs on SOI wafers. It is shown that the hole mobility enhancement factor of as high as 10 is obtained in locally fabricated p-MOSFETs through the effects of high-Ge content and the compressive strain. Furthermore, the local Ge-channel technologies are combined with global SiGe or Ge substrates for pursuing the optimal and individual design of n-MOSFETs and p-MOSFETs on a single Si wafer. The CMOS device composed of strained-Si n-MOSFETs and SGOI p-MOSFETs is successfully integrated on a same wafer, which is a promising CMOS structure under deep sub 100 nm technology nodes

  2. Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks

    Energy Technology Data Exchange (ETDEWEB)

    Kanashima, T., E-mail: kanashima@ee.es.osaka-u.ac.jp; Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K. [Graduate School of Engineering Science, Osaka University, Machkaneyama 1-3, Toyonaka, Osaka 560-8531 (Japan); Nohira, H. [Tokyo City University, 1-28-1 Tamazutumi, Setagaya-ku, Tokyo 158-8557 (Japan)

    2015-12-14

    We demonstrate a high-quality La{sub 2}O{sub 3} layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La{sub 2}O{sub 3}(001) and Ge(111). Structural analyses reveal that (001)-oriented La{sub 2}O{sub 3} layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La{sub 2}O{sub 3} layer is roughly estimated to be ∼19 from capacitance-voltage (C-V) analyses in Au/La{sub 2}O{sub 3}/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge–O–La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO{sub 2} monolayer. We discuss a model of the interfacial structure between La{sub 2}O{sub 3} and Ge(111) and comment on the C-V characteristics.

  3. Characterization of Si sub 1 sub - sub x Ge sub x thin films prepared by sputtering

    CERN Document Server

    Noguchi, T

    2000-01-01

    By bombarding solid targets, we deposited Si sub 1 sub - sub x Ge sub x thin films by sputtering without using inflammable CVD (chemical vapor deposition) gases. After the B sup + -implanted Si sub 1 sub - sub x Ge sub x films were thermally annealed, they were characterized. As the content of Ge increased, the refractive index increased and the band edge narrowed. The higher the annealing temperature, the lower the resistivity. For Si sub 1 sub - sub x Ge sub x films with a high Ge content (X approx 0.5), the flat-band voltage of the gate deduced from C-V curve was adjusted to the middle point between p sup + and n sup + polySi gates. Boron-doped SiGe films are promising gate materials for MOS (metal oxide semiconductor) and SOI (silicon on insulator) transistors driven at low driving voltage.

  4. Ballistic deficit correction methods for large Ge detectors-high counting rate study

    International Nuclear Information System (INIS)

    Duchene, G.; Moszynski, M.

    1995-01-01

    This study presents different ballistic correction methods versus input count rate (from 3 to 50 kcounts/s) using four large Ge detectors of about 70 % relative efficiency. It turns out that the Tennelec TC245 linear amplifier in the BDC mode (Hinshaw method) is the best compromise for energy resolution throughout. All correction methods lead to narrow sum-peaks indistinguishable from single Γ lines. The full energy peak throughput is found representative of the pile-up inspection dead time of the corrector circuits. This work also presents a new and simple representation, plotting simultaneously energy resolution and throughput versus input count rate. (TEC). 12 refs., 11 figs

  5. High power, ultra-broadband supercontinuum source based on highly GeO2 doped silica fiber

    DEFF Research Database (Denmark)

    Jain, Deepak; Sidharthan, Raghuraman; Moselund, Peter M.

    2017-01-01

    We demonstrate a 74 mol % GeO2 doped fiber for mid-infrared supercontinuum generation. Experiments ensure a highest output power for a broadest spectrum from 700nm to 3200nm from this fiber, while being pumped by a broadband 4 stage Erbium fiber based MOPA. The effect of repetition rate of pump...

  6. Auto Detection For High Level Water Content For Oil Well

    Science.gov (United States)

    Janier, Josefina Barnachea; Jumaludin, Zainul Arifin B.

    2010-06-01

    Auto detection of high level water content for oil well is a system that measures the percentage of water in crude oil. This paper aims to discuss an auto detection system for measuring the content of water level in crude oil which is applicable for offshore and onshore oil operations. Data regarding water level content from wells can be determined by using automation thus, well with high water level can be determined immediately whether to be closed or not from operations. Theoretically the system measures the percentage of two- fluid mixture where the fluids have different electrical conductivities which are water and crude oil. The system made use of grid sensor which is a grid pattern like of horizontal and vertical wires. When water occupies the space at the intersection of vertical and horizontal wires, an electrical signal is detected which proved that water completed the circuit path in the system. The electrical signals are counted whereas the percentage of water is determined from the total electrical signals detected over electrical signals provided. Simulation of the system using the MultiSIM showed that the system provided the desired result.

  7. GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

    Science.gov (United States)

    Aubin, J.; Hartmann, J. M.

    2018-01-01

    We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition tool from Applied Materials. Gaseous digermane (Ge2H6) and liquid tin tetrachloride (SnCl4) were used as the Ge and Sn precursors, respectively. The impact of temperature (in the 300-350 °C range), Ge2H6 and SnCl4 mass-flows on the GeSn growth kinetics at 100 Torr has been thoroughly explored. Be it at 300 °C or 325 °C, a linear GeSn growth rate increase together with a sub-linear Sn concentration increase occurred as the SnCl4 mass-flow increased, irrespective of the Ge2H6 mass flow (fixed or varying). The Sn atoms seemed to catalyze H desorption from the surface, resulting in higher GeSn growth rates for high SnCl4 mass-flows (in the 4-21 nm min-1 range). The evolution of the Sn content x with the F (SnCl4) 2 ·/F (Ge2H6) mass-flow ratio was fitted by x2/(1 - x) = n ·F (SnCl4) 2 ·/F (Ge2H6), with n = 0.25 (325 °C) and 0.60 (300 °C). We have otherwise studied the impact of temperature, in the 300-350 °C range, on the GeSn growth kinetics. The GeSn growth rate exponentially increased with the temperature, from 15 up to 32 nm min-1. The associated activation energy was low, i.e. Ea = 10 kcal mol-1. Meanwhile, the Sn content decreased linearly as the growth temperature increased, from 15% at 300 °C down to 6% at 350 °C.

  8. Corrosion Performance of Inconel 625 in High Sulphate Content

    Science.gov (United States)

    Ismail, Azzura

    2016-05-01

    Inconel 625 (UNS N06625) is a type of nickel-chromium-molybdenum alloy with excellent corrosion resistance in a wide range of corrosive media, being especially resistant to pitting and crevice corrosion. However, in aggressive environment, Inconel 625 will suffer corrosion attack like other metals. This research compared the corrosion performance of Inconel 625 when exposed to higher sulphate content compared to real seawater. The results reveal that Inconel 625 is excellent in resist the corrosion attack in seawater. However, at increasing temperature, the corrosion resistance of this metal decrease. The performance is same in seawater with high sulphate content at increasing temperature. It can be concluded that sulphate promote perforation on Inconel 625 and become aggressive agents that accelerate the corrosion attack.

  9. Contents

    Directory of Open Access Journals (Sweden)

    Editor IJRED

    2012-11-01

    Full Text Available International Journal of Renewable Energy Development www.ijred.com Volume 1             Number 3            October 2012                ISSN 2252- 4940   CONTENTS OF ARTICLES page Design and Economic Analysis of a Photovoltaic System: A Case Study 65-73 C.O.C. Oko , E.O. Diemuodeke, N.F. Omunakwe, and E. Nnamdi     Development of Formaldehyde Adsorption using Modified Activated Carbon – A Review 75-80 W.D.P Rengga , M. Sudibandriyo and M. Nasikin     Process Optimization for Ethyl Ester Production in Fixed Bed Reactor Using Calcium Oxide Impregnated Palm Shell Activated Carbon (CaO/PSAC 81-86 A. Buasri , B. Ksapabutr, M. Panapoy and N. Chaiyut     Wind Resource Assessment in Abadan Airport in Iran 87-97 Mojtaba Nedaei       The Energy Processing by Power Electronics and its Impact on Power Quality 99-105 J. E. Rocha and B. W. D. C. Sanchez       First Aspect of Conventional Power System Assessment for High Wind Power Plants Penetration 107-113 A. Merzic , M. Music, and M. Rascic   Experimental Study on the Production of Karanja Oil Methyl Ester and Its Effect on Diesel Engine 115-122 N. Shrivastava,  , S.N. Varma and M. Pandey  

  10. Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures

    Science.gov (United States)

    Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

    2017-10-01

    The energy band alignment of Ge1-xSnx/Ge1-x-ySixSny heterostructures was investigated, and control of the valence band offset at the Ge1-xSnx/Ge1-x-ySixSny heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-ySixSny layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-ySixSny layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-xSnx layer on a strain-relaxed Ge1-x-ySixSny layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

  11. Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

    International Nuclear Information System (INIS)

    Liu, Linjie; Xu, Dawei; Jin, Lei; Knoll, Lars; Wirths, Stephan; Nichau, Alexander; Buca, Dan; Mussler, Gregor; Holländer, Bernhard; Zhao, Qing-Tai; Mantl, Siegfried; Feng Di, Zeng; Zhang, Miao

    2013-01-01

    We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers on compressively strained Si 1−x Ge x substrates and their structural characteristics. The uniform Ni(Al) germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 °C with an optimized Al atomic content of 20 at. %. We find only two kinds of grains in the layer. Both grains show orthogonal relationship with modified B8 type phase. The growth plane is identified to be (10-10)-type plane. After germanosilicidation the strain in the rest Si 1−x Ge x layer is conserved, which provides a great advantage for device application

  12. An objective method for High Dynamic Range source content selection

    DEFF Research Database (Denmark)

    Narwaria, Manish; Mantel, Claire; Da Silva, Matthieu Perreira

    2014-01-01

    With the aim of improving the immersive experience of the end user, High Dynamic Range (HDR) imaging has been gaining popularity. Therefore, proper validation and performance benchmarking of HDR processing algorithms is a key step towards standardization and commercial deployment. A crucial...... component of such validation studies is the selection of a challenging and balanced set of source (reference) HDR content. In order to facilitate this, we present an objective method based on the premise that a more challenging HDR scene encapsulates higher contrast, and as a result will show up more...

  13. High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

    International Nuclear Information System (INIS)

    Shah, V. A.; Gammon, P. M.; Rhead, S. D.; Halpin, J. E.; Trushkevych, O.; Wilson, N. R.; Myronov, M.; Edwards, R. S.; Patchett, D. H.; Allred, P. S.; Prest, M. J.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R.; Chávez-Ángel, E.; Shchepetov, A.; Prunnila, M.; Kachkanov, V.; Dolbnya, I. P.; Reparaz, J. S.

    2014-01-01

    A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm 2 . We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials

  14. Density functional simulations of hexagonal Ge2Sb2Te5 at high pressure

    Science.gov (United States)

    Caravati, Sebastiano; Sosso, Gabriele C.; Bernasconi, Marco; Parrinello, Michele

    2013-03-01

    We investigated the structural transformations of the hexagonal phase of Ge2Sb2Te5 under pressure by means of ab initio molecular dynamics with a variable simulation cell. To overcome the enthalpy barriers between the different phases we used metadynamics techniques. We reproduced the hexagonal-to-bcc transformation under pressure found experimentally. The bcc phase retains a partial chemical order, as opposed to a second bcc phase we generated by pressuring the amorphous phase. This structural difference is suggested to be responsible for the memory effect uncovered experimentally, the bcc phase reverting to the amorphous or to the hexagonal phase upon decompression, depending on the type of precursor phase it originates from.

  15. Highly ordered nanopatterns on Ge and Si surfaces by ion beam sputtering

    International Nuclear Information System (INIS)

    Ziberi, B; Cornejo, M; Frost, F; Rauschenbach, B

    2009-01-01

    The bombardment of surfaces with low-energy ion beams leads to material erosion and can be accompanied by changes in the topography. Under certain conditions this surface erosion can result in well-ordered nanostructures. Here an overview of the pattern formation on Si and Ge surfaces under low-energy ion beam erosion at room temperature will be given. In particular, the formation of ripple and dot patterns, and the influence of different process parameters on their formation, ordering, shape and type will be discussed. Furthermore, the internal ion beam parameters inherent to broad beam ion sources are considered as an additional degree of freedom for controlling the pattern formation process. In this context: (i) formation of ripples at near-normal ion incidence, (ii) formation of dots at oblique ion incidence without sample rotation, (iii) transition between patterns, (iv) formation of ripples with different orientations and (v) long range ordered dot patterns will be presented and discussed.

  16. High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

    Energy Technology Data Exchange (ETDEWEB)

    Shah, V. A., E-mail: vishal.shah@warwick.ac.uk; Gammon, P. M. [Department of Engineering, The University of Warwick, Coventry CV4 7AL (United Kingdom); Department of Physics, The University of Warwick, Coventry CV4 7AL (United Kingdom); Rhead, S. D.; Halpin, J. E.; Trushkevych, O.; Wilson, N. R.; Myronov, M.; Edwards, R. S.; Patchett, D. H.; Allred, P. S.; Prest, M. J.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R. [Department of Physics, The University of Warwick, Coventry CV4 7AL (United Kingdom); Chávez-Ángel, E. [ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Department of Physics, UAB, 08193 Bellaterra (Barcelona) (Spain); Shchepetov, A.; Prunnila, M. [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT, Espoo (Finland); Kachkanov, V.; Dolbnya, I. P. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom); Reparaz, J. S. [ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); and others

    2014-04-14

    A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm{sup 2}. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.

  17. High-field study of the spin-Peierls system CuGeO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Regnault, L P [CEA Centre d` Etudes de Grenoble, 38 (France)

    1997-04-01

    The one-dimensional spin-1/2 Heisenberg antiferromagnetic system coupled to a three-dimensional phonon field undergoes a structural distortion below a finite temperature T{sub sp} (spin-Peierls transition) which induces the formation of a non-magnetic singlet ground-state and the opening of a gap in the excitation spectrum at the antiferromagnetic point. The recent discovery of the germanate CuGeO{sub 3} as a spin-Peierls system has considerably renewed the interest is this fascinating phenomenon. Inelastic neutron scattering and neutron diffraction have brought very quantitative pieces of information which can be directly compared to the predictions of the standard model. (author). 6 refs.

  18. Second-order phase transition at high-pressure in GeS crystal

    Energy Technology Data Exchange (ETDEWEB)

    Hashimzade, F.M.; Huseinova, D.A.; Jahangirli, Z.A.; Mehdiyev, B.H., E-mail: bachschi@yahoo.de

    2014-12-01

    In this paper we give a theoretical proof of the existence of a second-order structural phase transition in the GeS at a pressure of 35.4 GPa. We use the plane-wave pseudopotential approach to the density functional theory in the local density approximation. The evidence of the phase transition is the abrupt change in the bulk modulus as the volume of the unit cell of the crystal changes continuously. We show that the phase transition is caused by the softening of the low-frequency fully symmetric interlayer mode with increasing pressure. As a result, phase transition of a displacement type takes place with the change of translational symmetry of the crystal from the simple orthorhombic to the base-centered orthorhombic (P{sub bnm}(D{sub 2h}{sup 16})→C{sub mcm}(D{sub 2h}{sup 17}))

  19. JLab High Efficiency Klystron Baseline Design for 12 GeV Upgrade

    International Nuclear Information System (INIS)

    Hovater, J.; Delayen, Jean; Harwood, Leigh; Nelson, Richard; Wang, Haipeng

    2003-01-01

    A computer design of a 13.5 kW, 1497 MHz, CW type, 55% efficiency, 0.8 microPv beam perveance, ∼40 dB gain, 5-cavity klystron has been developed for JLab 12 GeV Upgrade project.The design uses TRICOMP codes to simulate the gun, mod-anode section, solenoid focus channel and beam dump. The klystron tube was designed by JPNDISK (1D) code initially and then optimized by MASK (2D) code for the baseline parameters. All of these codes have been bunch marked by JLab 5 kW operational klystrons. The details of design parameters and the simulations by MAFIA (3D) for the cavity couplings tuners, and window are also going to be presented.

  20. Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

    CERN Document Server

    Franco, Jacopo; Groeseneken, Guido

    2014-01-01

    Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and pr...

  1. Structural characterization of the high-temperature modification of the Cu_2ZnGeTe_4 quaternary semiconductor compound

    International Nuclear Information System (INIS)

    Nieves, L.; Marcano, G.; Power, C.; Rincon, C.; Delgado, G.E.; Lopez-Rivera, S.A.

    2016-01-01

    A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu_2ZnGeTe_4 quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm"-"1 have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm"-"1 tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this high-temperature modification of ZnTe and Cu_2GeTe_3 secondary phases has been detected by both XRD and Raman spectroscopy. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-09-05

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  3. Structural and electronic response of U{sub 3}Fe{sub 4}Ge{sub 4} to high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Henriques, M. S., E-mail: henriques@fzu.cz [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); CCTN, IST/CFMCUL, University of Lisbon, Nuclear and Technological Campus, P-2695-066 Bobadela (Portugal); Gorbunov, D. I.; Andreev, A. V.; Arnold, Z. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); Prchal, J.; Havela, L. [Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague (Czech Republic); Raison, P.; Heathman, S.; Griveau, J.-C.; Colineau, E. [European Commission, Joint Research Centre, Institute for Transuranium Elements, Postfach 2340, 76125 Karlsruhe (Germany); Gonçalves, A. P. [CCTN, IST/CFMCUL, University of Lisbon, Nuclear and Technological Campus, P-2695-066 Bobadela (Portugal)

    2015-03-21

    Structural, magnetic, and electrical properties have been studied on a U{sub 3}Fe{sub 4}Ge{sub 4} single crystal under hydrostatic pressure. The orthorhombic crystal structure is found to be stable up to 30 GPa, the highest applied pressure, but the compressibility is strongly anisotropic. Contrary to typical uranium intermetallics for which the softest lattice direction is along the shortest inter-uranium links, in U{sub 3}Fe{sub 4}Ge{sub 4} the lattice is compressed most in a perpendicular direction for the high pressure range. The elastic properties are modified considerably in the vicinity of 1 GPa when the b axis is transformed from least compressible to most compressible. The bulk modulus is found to be about 150 GPa. The anomalies in the elastic properties are reflected in the electronic properties that consistently indicate a change of the magnetic ground state from ferromagnetic to antiferromagnetic. Both types of order exhibit a gap in the magnon spectrum; however, it is twice as high for the ferromagnetic state. The magnetoresistance reveals field-induced transitions of different origins in the antiferromagnetic state along the easy and hard magnetization directions.

  4. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Science.gov (United States)

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  5. Multiparticle Production Process in $pp$ Interaction with High Multiplicity at E_p=70 GeV. Proposal "Termalization"

    CERN Document Server

    Avdeichikov, V V; Balandin, V P; Vasendina, V A; Zhidkov, N K; Zolin, L S; Zulkarneev, R Ya; Kireev, V I; Kosarev, I G; Kuzmin, N A; Kuraev, E A; Mandjavidze, I D; Nikitin, V A; Petukhov, Yu P; Peshekhonov, V D; Rufanov, I A; Susakian, A N; Yukaev, A I; Basiladze, Sergei G; Volkov, V Yu; Ermolov, P F; Kramarenko, V A; Kubarovskii, A V; Leflat, A K; Merkin, M M; Popov, V V; Tikhonova, L A; Anikeev, A N; Vasilchenko, V G; Vorobev, A P; Lapshin, V G; Maiorov, S V; Melnik, Yu M; Meshchanin, A P; Ryadovikov, V N; Kholodenko, A G; Tsyupa, Yu P; Chikilev, O G; Yakutin, A E; Dremin, I M; Kokoulina, E S; Pankov, A A; Kuvshinov, V I

    2004-01-01

    The goal of the proposed experiment is the investigation of the collective behaviour of particles in the process of multiple hadron production in the $pp$ interaction $pp\\to n_\\pi\\pi+2N$ at the beam energy $E_{\\rm lab}=70$ GeV. The domain of high multiplicity $n_\\pi=20{-}35$ or $z=n/\\bar n=3{-}5$ will be studied. Near the threshold of the reaction $n_\\pi\\to 69$, all particles get a small relative momentum. As a consequence of the multiboson interference a number of collective effects may occur. In particular, drastic increase of the partial cross section $\\sigma(n)$ of the $n$ identical particles production, as compared with commonly accepted extrapolation, and increase of the rate of direct photons are expected. The experiment is carried out on the modernized installation SVD, a spectrometer with a vertex detector which is supplied with a trigger system for registration of rare events with high multiplicity, on extracted proton beam of the IHEP (Protvino) 70 GeV accelerator. Required beam intensity is $\\sim ...

  6. Eta Production at High Transverse Momentum by Negative 520 GeV/c Pions Incident on Beryllium and Copper Targets

    Energy Technology Data Exchange (ETDEWEB)

    Roser, Robert Martin [Univ. of Rochester, NY (United States)

    1994-01-01

    This thesis presents a measurement of the production of high transverse momentum 17 mesons by a 520 GeV /c $\\sqrt{s}$ = 31.2) $\\pi^-$ beam using data collected during the 1990 fixed target run of Fermilab experiment E706. E706 is a second generation fixed target experiment designed to measure direct-photon production in hadron-nucleus collisions. These data provide a clean test of perturbative QCD and serve as a valuable tool for probing hadronic structure. The $\\gamma\\gamma$ decay mode of the $\\eta$ meson was studied using data from a highly segmented electromagnetic lead liquid argon sampling calorimeter. Results are presented for inclusive $\\eta$ production by $\\pi^-$ beams on both beryllium and copper targets. The $\\eta$ to $\\pi^0$ production ratio and the nuclear dependence of the $\\eta$ production cross section are also reported. These results are for $\\eta$'s in the transverse momentum range 3.5 to 9 Ge V / c and the center of mass rapidity range -0.75 to 0.75, and are the highest energy results ever obtained for inclusive $\\eta$ production using a $\\pi^-$ beam.

  7. SCC with high volume of fly ash content

    Directory of Open Access Journals (Sweden)

    Bakhrakh Anton

    2017-01-01

    Full Text Available Self-compacting concrete is a very perspective building material. It provides great benefits during the construction of heavily reinforced buildings. SCC has outstanding properties such as high flowability, dense structure and high strength due to specific quality of aggregates, fillers, their proportion in mix, use of polycarboxylate-based superplasticizers. Main disadvantages of SCC are high price and the difficulty of obtaining a proper mix. Use of fillers, such as fly ash type F, is a way to make SCC cheaper by replacing part of cement. Fly ash also provides some technological and operating advantages. In this paper the influence of high volume (60% from cement fly ash type F on the properties of concrete mixture and hardened concrete is investigated. The result of the work shows the possibility of reduction the cost of SCC using ordinary fillers and high amount of fly ash. The investigated SCC has low speed of hardening (7-day compressive strength at the range of 41.8 MPa and high volume of entrained air content (3.5%.

  8. High-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe-Si-Ge thin film alloy library

    Science.gov (United States)

    d'Acremont, Quentin; Pernot, Gilles; Rampnoux, Jean-Michel; Furlan, Andrej; Lacroix, David; Ludwig, Alfred; Dilhaire, Stefan

    2017-07-01

    A High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties. We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library FexSiyGe100-x-y (20 deposited by wedge-type multi-layer method on a 100 mm diameter sapphire wafer offering more than 300 analysis areas of different ternary alloy compositions.

  9. Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates

    International Nuclear Information System (INIS)

    Wang, Kai; Gong, Qian; Zhou, Haifei; Kang, Chuanzhen; Yan, Jinyi; Liu, Qingbo; Wang, Shumin

    2014-01-01

    We investigated the growth of tensile-strained Ge on InAlP metamorphic templates by gas source molecular beam epitaxy. Good control of biaxial tensile strain in the Ge layer was demonstrated in the range of 0.5–2.0% by adjusting the In content of the metamorphic template. It was found that the growth of Ge was layer-by-layer (2D) even under high tensile strain of 2.0%, resulting in a smooth surface with roughness less than 1.5 nm. Hall results showed that the electron mobility of Ge increased monotonically with tensile strain.

  10. High-pressure studies on a new superconducting clathrate: Ba sub 6 Ge sub 2 sub 5

    CERN Document Server

    Yuan, H Q; Carrillo-Cabrera, W; Paschen, S; Sparn, G; Baenitz, M; Grin, Y; Steglich, F

    2002-01-01

    The effect of pressure on the low-temperature states of the newly discovered clathrate Ba sub 6 Ge sub 2 sub 5 is investigated by means of measurements of the electrical resistivity. At ambient pressure, Ba sub 6 Ge sub 2 sub 5 undergoes a two-step structural phase transition between 230 and 180 K from metallic behaviour to a high-resistivity state characterized by a mean free path of about 3 A. Interestingly, a Bardeen-Cooper-Schrieffer-like (BCS-like) superconducting transition occurs at T sub C approx 0.24 K from the resulting 'bad metal'. With increasing pressure, the structural phase transition is depressed but T sub C increases drastically. T sub C reaches a maximum value of 3.85 K at the critical pressure p sub C approx 2.8 GPa, where the structural distortion is completely suppressed and the system exhibits metallic behaviour. Higher pressures lead to a slight decrease of T sub C.

  11. Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

    Science.gov (United States)

    Wang, Yong; Zheng, Yonghui; Liu, Guangyu; Li, Tao; Guo, Tianqi; Cheng, Yan; Lv, Shilong; Song, Sannian; Ren, Kun; Song, Zhitang

    2018-03-01

    To bridge the gap of access time between memories and storage systems, the concept of storage class memory has been put forward based on emerging nonvolatile memory technologies. For all the nonvolatile memory candidates, the unpleasant tradeoff between operation speed and retention seems to be inevitable. To promote both the write speed and the retention of phase change memory (PCM), Sc doped Ge2Sb2Te5 (SGST) has been proposed as the storage medium. Octahedral Sc-Te motifs, acting as crystallization precursors to shorten the nucleation incubation period, are the possible reason for the high write speed of 6 ns in PCM cells, five-times faster than that of Ge2Sb2Te5 (GST) cells. Meanwhile, an enhanced 10-year data retention of 119 °C has been achieved. Benefiting from both the increased crystalline resistance and the inhibited formation of the hexagonal phase, the SGST cell has a 77% reduction in power consumption compared to the GST cell. Adhesion of the SGST/SiO2 interface has been strengthened, attributed to the reduced stress by forming smaller grains during crystallization, guaranteeing the reliability of the device. These improvements have made the SGST material a promising candidate for PCM application.

  12. Magnetic and electrical properties of epitaxial GeMn

    Energy Technology Data Exchange (ETDEWEB)

    Ahlers, Stefan

    2009-01-15

    In this work, GeMn magnetic semiconductors will be investigated. The fabrication of GeMn thin films with Mn contents up to 11.7% was realised with molecular beam epitaxy. At a fabrication temperature of 60 C, the suppression of Mn{sub x}Ge{sub y} phases could reproducibly be obtained. Dislocation free epitaxy of diamond-lattice type GeMn thin films was observed. In all fabrication conditions where Mn{sub x}Ge{sub y} suppression was feasible, an inhomogeneous dispersion of Mn was observed in form of a self-assembly of nanometre sized, Mn rich regions in a Ge rich matrix. Each Mn rich region exhibits ferromagnetic coupling with high Curie temperatures exceeding, in part, room temperature. The local ferromagnetic ordering leads to the formation of large, spatially separated magnetic moments, which induce a superparamagnetic behaviour of the GeMn thin films. At low temperatures {<=} 20 K, remanent behaviour was found to emerge. X-ray absorption experiments revealed a similarity of the Mn incorporation in diamond-lattice type GeMn thin films and in the hexagonal lattice of the intermetallic Mn{sub 5}Ge{sub 3} phase, respectively. These tetrahedra represent building blocks of the Mn{sub 5}Ge{sub 3} unit cell. The incorporation of Mn{sub 5}Ge{sub 3} building blocks was found to be accompanied by local structural disorder. The electrical properties of GeMn thin films were addressed by transport measurements. It was shown that by using a n-type Ge substrate, a pn energy barrier between epilayers and substrate to suppress parallel substrate conduction paths can be introduced. With the pn barrier concept, first results on the magnetotransport behaviour of GeMn thin films were obtained. GeMn was found to be p-type, but of high resistivity. a series of GeMn thin films was fabricated, where intermetallic Mn{sub x}Ge{sub y} phase separation was supported in a controlled manner. Phase separation was found to result in the formation of partially coherent, nanometre sized Mn{sub 5

  13. A content analysis of tweets about high-potency marijuana.

    Science.gov (United States)

    Cavazos-Rehg, Patricia A; Sowles, Shaina J; Krauss, Melissa J; Agbonavbare, Vivian; Grucza, Richard; Bierut, Laura

    2016-09-01

    "Dabbing" involves heating extremely concentrated forms of marijuana to high temperatures and inhaling the resulting vapor. We studied themes describing the consequences of using highly concentrated marijuana by examining the dabbing-related content on Twitter. Tweets containing dabbing-related keywords were collected from 1/1-1/31/2015 (n=206,854). A random sample of 5000 tweets was coded for content according to pre-determined categories about dabbing-related behaviors and effects experienced using a crowdsourcing service. An examination of tweets from the full sample about respiratory effects and passing out was then conducted by selecting tweets with relevant keywords. Among the 5000 randomly sampled tweets, 3540 (71%) were related to dabbing marijuana concentrates. The most common themes included mentioning current use of concentrates (n=849; 24%), the intense high and/or extreme effects from dabbing (n=763; 22%) and excessive/heavy dabbing (n=517; 15%). Extreme effects included both physiological (n=124/333; 37%) and psychological effects (n=55/333; 17%). The most common physiologic effects, passing out (n=46/333; 14%) and respiratory effects (n=30/333; 9%), were then further studied in the full sample of tweets. Coughing was the most common respiratory effect mentioned (n=807/1179; 68%), and tweeters commonly expressed dabbing with intentions to pass out (416/915; 45%). This study adds to the limited understanding of marijuana concentrates and highlights self-reported physical and psychological effects from this type of marijuana use. Future research should further examine these effects and the potential severity of health consequences associated with concentrates. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  14. High GC content causes orphan proteins to be intrinsically disordered.

    Directory of Open Access Journals (Sweden)

    Walter Basile

    2017-03-01

    Full Text Available De novo creation of protein coding genes involves the formation of short ORFs from noncoding regions; some of these ORFs might then become fixed in the population. These orphan proteins need to, at the bare minimum, not cause serious harm to the organism, meaning that they should for instance not aggregate. Therefore, although the creation of short ORFs could be truly random, the fixation should be subjected to some selective pressure. The selective forces acting on orphan proteins have been elusive, and contradictory results have been reported. In Drosophila young proteins are more disordered than ancient ones, while the opposite trend is present in yeast. To the best of our knowledge no valid explanation for this difference has been proposed. To solve this riddle we studied structural properties and age of proteins in 187 eukaryotic organisms. We find that, with the exception of length, there are only small differences in the properties between proteins of different ages. However, when we take the GC content into account we noted that it could explain the opposite trends observed for orphans in yeast (low GC and Drosophila (high GC. GC content is correlated with codons coding for disorder promoting amino acids. This leads us to propose that intrinsic disorder is not a strong determining factor for fixation of orphan proteins. Instead these proteins largely resemble random proteins given a particular GC level. During evolution the properties of a protein change faster than the GC level causing the relationship between disorder and GC to gradually weaken.

  15. Production of JET fuel containing molecules of high hydrogen content

    Directory of Open Access Journals (Sweden)

    Tomasek Sz.

    2017-12-01

    Full Text Available The harmful effects of aviation can only be reduced by using alternative fuels with excellent burning properties and a high hydrogen content in the constituent molecules. Due to increasing plastic consumption the amount of the plastic waste is also higher. Despite the fact that landfill plastic waste has been steadily reduced, the present scenario is not satisfactory. Therefore, the aim of this study is to produce JET fuel containing an alternative component made from straight-run kerosene and the waste polyethylene cracking fraction. We carried out our experiments on a commercial NiMo/Al2O3/P catalyst at the following process parameters: T=200-300°C, P=40 bar, LHSV=1.0-3.0 h-1, hydrogen/hydrocarbon ratio= 400 Nm3/m3. We investigated the effects of the feedstocks and the process parameters on the product yields, the hydrodesulfurization and hydrodearomatization efficiencies, and the main product properties. The liquid product yields varied between 99.7-99.8%. As a result of the hydrogenation the sulfur (1-1780 mg/kg and the aromatic contents (9.0-20.5% of the obtained products and the values of their smoke points (26.0-34.7 mm fulfilled the requirements of JET fuel standard. Additionally, the concentration of paraffins increased in the products and the burning properties were also improved. The freezing points of the products were higher than -47°C, therefore product blending is needed.

  16. Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

    Science.gov (United States)

    Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

    2017-10-30

    We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

  17. Cermet anode compositions with high content alloy phase

    Science.gov (United States)

    Marschman, Steven C.; Davis, Norman C.

    1989-01-01

    Cermet electrode compositions comprising NiO-NiFe.sub.2 O.sub.4 -Cu-Ni, and methods for making, are disclosed. Addition of nickel metal prior to formation and densification of a base mixture into the cermet allows for an increase in the total amount of copper and nickel that can be contained in the NiO-NiFe.sub.2 O.sub.4 oxide system. Nickel is present in a base mixture weight concentration of from 0.1% to 10%. Copper is present in the alloy phase in a weight concentration of from 10% to 30% of the densified composition. Such cermet electrodes can be formed to have electrical conductivities well in excess of 100 ohm.sup.-1 cm.sup.-1. Other alloy and oxide system cermets having high content metal phases are also expected to be manufacturable in accordance with the invention.

  18. Automation in high-content flow cytometry screening.

    Science.gov (United States)

    Naumann, U; Wand, M P

    2009-09-01

    High-content flow cytometric screening (FC-HCS) is a 21st Century technology that combines robotic fluid handling, flow cytometric instrumentation, and bioinformatics software, so that relatively large numbers of flow cytometric samples can be processed and analysed in a short period of time. We revisit a recent application of FC-HCS to the problem of cellular signature definition for acute graft-versus-host-disease. Our focus is on automation of the data processing steps using recent advances in statistical methodology. We demonstrate that effective results, on par with those obtained via manual processing, can be achieved using our automatic techniques. Such automation of FC-HCS has the potential to drastically improve diagnosis and biomarker identification.

  19. Diffusion in a pure, high-vacancy-content crystal

    International Nuclear Information System (INIS)

    McKee, R.A.

    1981-01-01

    The idea that vacancies can follow a nonrandom walk in a solid has been developed and put into a quantitative form for diffusion in a pure, high-vacancy-content crystal. Intrinsic and tracer diffusion in a metal have been analyzed, and the electrical mobility in an ionic solid has been expressed in terms of the tracer diffusion coefficient and the separate correlation factors for atoms and vacancies. The description uses classical methods of diffusion theory, and generalized results that account for nonrandom vacancy walk have been shown to reduce to those obtained by Howard and Lidiard in a system where the vacancy moves randomly as an isolated point defect. Experimental data for carbon diffusion in fcc iron have been examined to illustrate an interstitial-vacancy analogy that was used in this analysis, and the general result has been applied specifically to discuss vacancy diffusion in Fe/sub 1-x/S

  20. Oxy-combustion of high water content fuels

    Science.gov (United States)

    Yi, Fei

    As the issues of global warming and the energy crisis arouse extensive concern, more and more research is focused on maximizing energy efficiency and capturing CO2 in power generation. To achieve this, in this research, we propose an unconventional concept of combustion - direct combustion of high water content fuels. Due to the high water content in the fuels, they may not burn under air-fired conditions. Therefore, oxy-combustion is applied. Three applications of this concept in power generation are proposed - direct steam generation for the turbine cycle, staged oxy-combustion with zero flue gas recycle, and oxy-combustion in a low speed diesel-type engine. The proposed processes could provide alternative approaches to directly utilize fuels which intrinsically have high water content. A large amount of energy to remove the water, when the fuels are utilized in a conventional approach, is saved. The properties and difficulty in dewatering high water content fuels (e.g. bioethanol, microalgae and fine coal) are summarized. These fuels include both renewable and fossil fuels. In addition, the technique can also allow for low-cost carbon capture due to oxy-combustion. When renewable fuel is utilized, the whole process can be carbon negative. To validate and evaluate this concept, the research focused on the investigation of the flame stability and characteristics for high water content fuels. My study has demonstrated the feasibility of burning fuels that have been heavily diluted with water in a swirl-stabilized burner. Ethanol and 1-propanol were first tested as the fuels and the flame stability maps were obtained. Flame stability, as characterized by the blow-off limit -- the lowest O2 concentration when a flame could exist under a given oxidizer flow rate, was determined as a function of total oxidizer flow rate, fuel concentration and nozzle type. Furthermore, both the gas temperature contour and the overall ethanol concentration in the droplets along the

  1. Physics and a plan for a 45 GeV facility that extends the high-intensity capability in nuclear and particle physics

    International Nuclear Information System (INIS)

    1986-05-01

    A proposed program of physics research to be carried out at a 45 GeV high-intensity proton accelerator is discussed. In addition to a general discussion of the potentially most productive research directions, specific experiments in strong and flavor physics are presented. The proposed strong interaction physics deals with investigation of nonperturbative QCD through the study of exotic hadrons and measurement of nuclear medium effects on flavor-specific quark momentum distribution. The major part of the proposed program in flavor interaction physics probes possible physics beyond the minimal standard model. A design using two synchrotrons produces a 45 GeV proton beam by increasing the energy of the present LAMPF 800 MeV beam. A booster operating at 60 Hz accelerates 144 μA from 800 MeV to 6 GeV while the main ring operating at 3.33 Hz accelerates 32 μA from 6 GeV to 45 GeV. The 112 μA at 6 GeV which is not further accelerated is used to create intense beams of neutrinos and pulsed muons. The 32 μA of 45 GeV beam is slow extracted into an existing experimental area in which a large number of high-intensity, high-purity kaon and other secondary beams will be produced. A proposed layout of the experimental areas along with the characteristics of the secondary beams is also presented. The report concludes with a cost estimate to construct such a facility at Los Alamos

  2. Gravitino or axino dark matter with reheat temperature as high as 10{sup 16} GeV

    Energy Technology Data Exchange (ETDEWEB)

    Co, Raymond T. [Berkeley Center for Theoretical Physics, Department of Physics, University of California,366 LeConte Hall MC 7300, Berkeley, CA 94720 (United States); Theoretical Physics Group, Lawrence Berkeley National Laboratory,1 Cyclotron Rd., Berkeley, CA 94720 (United States); D’Eramo, Francesco [Department of Physics, University of California Santa Cruz,1156 High Street, Santa Cruz, CA 95064 (United States); Santa Cruz Institute for Particle Physics,1156 High Street, Santa Cruz, CA 95064 (United States); Hall, Lawrence J. [Berkeley Center for Theoretical Physics, Department of Physics, University of California,366 LeConte Hall MC 7300, Berkeley, CA 94720 (United States); Theoretical Physics Group, Lawrence Berkeley National Laboratory,1 Cyclotron Rd., Berkeley, CA 94720 (United States)

    2017-03-01

    A new scheme for lightest supersymmetric particle (LSP) dark matter is introduced and studied in theories of TeV supersymmetry with a QCD axion, a, and a high reheat temperature after inflation, T{sub R}. A large overproduction of axinos (ã) and gravitinos (G̃) from scattering at T{sub R}, and from freeze-in at the TeV scale, is diluted by the late decay of a saxion condensate that arises from inflation. The two lightest superpartners are ã, with mass of order the TeV scale, and G̃ with mass m{sub 3/2} anywhere between the keV and TeV scales, depending on the mediation scale of supersymmetry breaking. Dark matter contains both warm and cold components: for G̃ LSP the warm component arises from ã→G̃a, while for ã LSP the warm component arises from G̃→ãa. The free-streaming scale for the warm component is predicted to be of order 1 Mpc (and independent of m{sub 3/2} in the case of G̃ LSP). T{sub R} can be as high as 10{sup 16} GeV, for any value of m{sub 3/2}, solving the gravitino problem. The PQ symmetry breaking scale V{sub PQ} depends on T{sub R} and m{sub 3/2} and can be anywhere in the range (10{sup 10}−10{sup 16}) GeV. Detailed predictions are made for the lifetime of the neutralino LOSP decaying to ã+h/Z and G̃+h/Z/γ, which is in the range of (10{sup −1}−10{sup 6})m over much of parameter space. For an axion misalignment angle of order unity, the axion contribution to dark matter is sub-dominant, except when V{sub PQ} approaches 10{sup 16} GeV.

  3. Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.

    Science.gov (United States)

    Wu, Weihua; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

    2017-10-06

    Superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phase-change memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multi-level switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.

  4. High field X-ray diffraction measurements of Mn2Sb0.95Ge0.05

    International Nuclear Information System (INIS)

    Wakamori, Taoto; Mitsui, Yoshifuru; Hiroi, Masahiko; Koyama, Keiichi; Takahashi, Kohki; Umetsu, Rie Y.

    2016-01-01

    Magnetization and high-field X-ray powder diffraction measurements were performed for Mn 2 Sb 0.95 Ge 0.05 with a tetragonal structure in magnetic fields up to 5 T in the 10-300 K temperature range. For B = 0 T and 5 T, a first-order magnetic transition from a ferrimagnetic (FRI) to an antiferromagnetic (AFM) state occurred at T t ∼ 180 K and 150 K, respectively, and were accompanied by an iso-structural transformation. For this transition from the AFM to FRI state, the lattice parameters a and c changed by |Δa/a| = 0.15% and by |Δc/c| = 0.47% at 180 K. The compound showed both metamagnetic transition from the AFM to FRI state with a hysteresis at the temperature just below T t and magnetic field-induced iso-structural transformation.

  5. Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

    International Nuclear Information System (INIS)

    Sun Ya-Bin; Li Xiao-Jin; Zhang Jin-Zhong; Shi Yan-Ling

    2017-01-01

    In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the small-signal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model. (paper)

  6. Gravel Mobility in a High Sand Content Riverbed

    Science.gov (United States)

    Haschenburger, J. K.

    2017-12-01

    In sand-gravel channels, sand may modify gravel transport by changing conditions of entrainment and promoting longer displacements or gravel may inhibit sand transport if concentrated into distinct deposits, which restrict sand supply with consequences for migrating bedform size or form. This study reports on gravel mobility in the lower San Antonio River, Texas, where gravel content in the bed material ranges from about 1% to more than 20%. Sediment transport observations were collected at three U.S. Geological Survey gauging stations by deploying a Helley-Smith sampler with a 0.2 mm mesh bag from which transport rates and mobile grain sizes were determined. The flow rates sampled translate into an annual exceedance expectation from 0.2% to 98%. Gravel transport rates are generally two orders of magnitude smaller than the rates of sand transport. However, the finest gravels are transported at rates on the same order of magnitude as the coarsest sands. At all sites, the 2 and 2.8 mm fractions are transported at the lowest flow rate sampled, suggesting mobility for at least 38% to as much as 98% of the year. Fractions as large as 8 mm are mobilized at flow rates that are expected between 25% and 53% of the year. The largest fractions captured in the sampling (16 to 32 mm) require flows closer to bankfull conditions that occur no more than 0.8% of the year. Results document that some gravel sizes can be frequently transported in low gradient riverbeds with high sand content.

  7. Design and Synthesis of novel CuxGeOy/Cu/C nanowires by in situ chemical reduction process with highly reversible capacity for Lithium Batteries

    International Nuclear Information System (INIS)

    Wang, Linlin; Zhang, Xiaozhu; Peng, Xia; Tang, Kaibin

    2015-01-01

    The synthesis and use of ternary metal oxides/metal particles/carbon hybrids, especially 1D naowires composed of MGeO 3 /M/C hybrids for energy storage, remains very few reports. In this work, 1D Cu x GeO y /Cu/C NWs (x < 1, y < 3) were successfully prepared by a simple method involving chemical reduction process and simultaneous carbon coating. It was found that through the polydopamine(PDA)-assisted chemical reduction process performed on the CuGeO 3 NWs, the phase partially transformed to a mixture of crystalline Cu (∼70 nm) and amorphous Cu x GeO y NWs with carbon coating, but the nanowire-shaped morphology was maintained. Electrochemical measurements showed that the Cu x GeO y /Cu/C NWs exhibited a stable reversible capacity of ∼900 mA h g −1 after 100 cycles. Even at 800 mA g −1 , it also exhibited excellent high rate capacity of 350 mA h g −1 . The newly generated Cu x GeO y @Cu@CNWs exhibit enhanced cycle stability with high lithium-storage capability compared to that of the as-preparedCuGeO 3 NWs. (*) The in situ-synthesized Cu nanoparticles, amorphous state and carbon coating might play an important role in activating and enhancing the reversibility of the conversion reaction of Cu x GeO y . In addition, this effective synthetic method might provide the methodology for the development of other ternary metal oxides/metal particles/carbon hybrids materials for energy storage.

  8. Fully Biodegradable Biocomposites with High Chicken Feather Content

    Directory of Open Access Journals (Sweden)

    Ibon Aranberri

    2017-11-01

    Full Text Available The aim of this work was to develop new biodegradable polymeric materials with high loadings of chicken feather (CF. In this study, the effect of CF concentration and the type of biodegradable matrix on the physical, mechanical and thermal properties of the biocomposites was investigated. The selected biopolymers were polylactic acid (PLA, polybutyrate adipate terephthalate (PBAT and a PLA/thermoplastic copolyester blend. The studied biocomposites were manufactured with a torque rheometer having a CF content of 50 and 60 wt %. Due to the low tensile strength of CFs, the resulting materials were penalized in terms of mechanical properties. However, high-loading CF biocomposites resulted in lightweight and thermal-insulating materials when compared with neat bioplastics. Additionally, the adhesion between CFs and the PLA matrix was also investigated and a significant improvement of the wettability of the feathers was obtained with the alkali treatment of the CFs and the addition of a plasticizer like polyethylene glycol (PEG. Considering all the properties, these 100% fully biodegradable biocomposites could be adequate for panel components, flooring or building materials as an alternative to wood–plastic composites, contributing to the valorisation of chicken feather waste as a renewable material.

  9. Development of automatic image analysis methods for high-throughput and high-content screening

    NARCIS (Netherlands)

    Di, Zi

    2013-01-01

    This thesis focuses on the development of image analysis methods for ultra-high content analysis of high-throughput screens where cellular phenotype responses to various genetic or chemical perturbations that are under investigation. Our primary goal is to deliver efficient and robust image analysis

  10. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  11. Cross-correlation analysis of Ge/Li/ spectra

    International Nuclear Information System (INIS)

    MacDonald, R.; Robertson, A.; Kennett, T.J.; Prestwich, W.V.

    1974-01-01

    A sensitive technique is proposed for activation analysis using cross-correlation and improved spectral orthogonality achieved through use of a rectangular zero area digital filter. To test the accuracy and reliability of the cross-correlation procedure five spectra obtained with a Ge/Li detector were combined in different proportions. Gaussian distributed statistics were then added to the composite spectra by means of a pseudo-random number generator. The basis spectra used were 76 As, 82 Br, 72 Ga, 77 Ge, and room background. In general, when the basis spectra were combined in roughly comparable proportions the accuracy of the techique proved to be excelent (>1%). However, of primary importance was the ability of the correlation technique to identify low intensity components in the presence of high intensity components. It was found that the detection threshold for Ge, for example, was not reached until the Ge content in the unfiltered spectrum was <0.16%. (T.G.)

  12. High-resolution x-ray diffraction studies of self-organized SiGe(C) islands

    International Nuclear Information System (INIS)

    Stangl, S.

    2000-06-01

    The scope of this thesis is the investigation of semiconductor heterostructures with various x-ray scattering techniques. The work focuses on self-organized Si-based nanostructures. Their small size and the difference in band gap with respect to the surrounding matrix lead to quantum confinement, with increased density of states and carrier localization as most important consequences. These make the use of such nanostructures in novel electrical and optical devices promising. A big challenge in the fabrication of nanostructures lies in the required high areal density at extremely low defect densities. Self-organized growth is in this aspect superior to, e.g. the post-growth lithographic patterning of planar heterostructures. There are, however, other difficulties: the dependence of the internal structure and the size and size homogeneity of self-organized nanostructures on various growth parameters has not yet been fully understood, leaving the fabrication of structures with predictable properties difficult. The investigation of self-organized nanostructures presented in this thesis intends to contribute to the understanding of the growth processes. In particular, the correlation properties of SiGe quantum dots in multilayers, and the determination of the strain and composition distribution within free-standing SiGe dots are major topics of this work. Another main part of the presented thesis is the conception and setup of a new x-ray diffractometer, expanding the possibilities of structural characterization at the 'Institut fuer Halbleiterphysik'. A detailed description of this instrument shall serve as an operating manual and quick reference. (author)

  13. Design and Implementation of High Performance Content-Addressable Memories.

    Science.gov (United States)

    1985-12-01

    content addressability and two basic implementations of content addressing. The need and application of hardware CAM is presented to motivate the " topic...3r Pass 4th Ps4 Pass Figure 2.15 Maximum SearchUsing All-Parallel CAM - left-most position (the most significant bit) and the other IF bits are zeros

  14. Impact of sulfur content on structural and optical properties of Ge20Se80-xSx chalcogenide glasses thin films

    Science.gov (United States)

    Dongol, M.; Elhady, A. F.; Ebied, M. S.; Abuelwafa, A. A.

    2018-04-01

    Chalcogenide system Ge20Se80-xSx (x = 0, 15 and 30%) thin films were prepared by thermal evaporation technique. The amorphous state of the samples was confirmed according to XRD. The structural changes occurring upon replacement Se by S was investigated using Raman spectroscopy. The optical properties of the as-deposited Ge20Se80-xSx thin films have been studied by analysis the transmittance T(λ) measured at room temperature in the wavelength range 200-2500 nm using Swanepoel's method. Urbach energy (Ee) and optical band gap (Eg) were strongly affected by sulfur concentration in the sample. The refractive index evaluated through envelope method was extrapolated by Cauchy dispersion relationship over the whole spectral range. Moreover, the dispersion of refractive index was analyzed in terms of the single-oscillator Wemple-Di Domenico model. The third-order nonlinear susceptibility (χ(3)) and nonlinear refractive index (n2) were calculated and discussed for different Ge20Se80-xSx (x = 0, 15 and 30%).

  15. The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

    Science.gov (United States)

    Kil, Yeon-Ho; Yuk, Sim-Hoon; Jang, Han-Soo; Lee, Sang-Geul; Choi, Chel-Jong; Shim, Kyu-Hwan

    2018-03-01

    We have investigated the low temperature (LT) growth of GeSn-Ge-Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and Sn segregation, it was hard to achieve high quality GeSn epitaxy at the temperature > 350 °C. On the contrary, we found that the SnCl4 promoted the reaction of Ge2H6 precursors in a certain process condition of LT, 240-360 °C. In return, we could perform the growth of GeSn epi layer with 7.7% of Sn and its remaining compressive strain of 71.7%. The surface propagated defects were increased with increasing the Sn content in the GeSn layer confirmed by TEM analysis. And we could calculate the activation energies at lower GeSn growth temperature regime using by Ge2H6 and SnCl4 precursors about 0.43 eV.

  16. GENERALIZATION, FORMULATION AND HEAT CONTENTS OF SIMULATED MSW WITH HIGH MOISTURE CONTENT

    Directory of Open Access Journals (Sweden)

    A. JOHARI

    2012-12-01

    Full Text Available This paper presents a generalization technique for the formulation of simulated municipal solid waste. This technique is used for the elimination of the inconsistency in the municipal solid waste (MSW characteristics due to its heterogeneous nature. The compositions of simulated municipal solid waste were formulated from four major municipal waste streams components in Malaysia namely paper, plastic, food and yard waste. The technique produced four simplified waste generalization categories with composition of paper (19%, plastic (25%, food (27% and green waste (29% respectively. Comparative study was conducted for proximate analysis for the determination of volatile matter, fixed carbon and ash content. Ultimate analysis was performed for carbon and hydrogen content. The heat content for simulated and actual municipal solid waste showed good agreement. The moisture content of the simulated municipal solid waste and actual municipal solid waste were established at 52.34% and 61.71% respectively. Overall results were considered to be representative of the actual compositions of municipal solid waste in Malaysia.

  17. HIGH-ENERGY OBSERVATIONS OF PSR B1259–63/LS 2883 THROUGH THE 2014 PERIASTRON PASSAGE: CONNECTING X-RAYS TO THE GeV FLARE

    Energy Technology Data Exchange (ETDEWEB)

    Tam, P. H. T.; Li, K. L.; Kong, A. K. H. [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu, Taiwan (China); Takata, J. [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong); Okazaki, A. T. [Faculty of Engineering, Hokkai-Gakuen University, Toyohira-ku, Sapporo 062-8605 (Japan); Hui, C. Y., E-mail: phtam@phys.nthu.edu.tw [Department of Astronomy and Space Science, Chungnam National University, Daejeon (Korea, Republic of)

    2015-01-01

    The binary system PSR B1259–63/LS 2883 is well sampled in radio, X-rays, and TeV γ-rays, and shows orbital-phase-dependent variability in these frequencies. The first detection of GeV γ-rays from the system was made around the 2010 periastron passage. In this Letter, we present an analysis of X-ray and γ-ray data obtained by the Swift/XRT, NuSTAR/FPM, and Fermi/LAT, through the recent periastron passage which occurred on 2014 May 4. While PSR B1259–63/LS 2883 was not detected by the Large Area Telescope before and during this passage, we show that the GeV flares occurred at a similar orbital phase as in early 2011, thus establishing the repetitive nature of the post-periastron GeV flares. Multiple flares each lasting for a few days have been observed and short-term variability is seen as well. We also found X-ray flux variation contemporaneous with the GeV flare for the first time. Strong evidence of the keV-to-GeV connection came from the broadband high-energy spectra, which we interpret as synchrotron radiation from the shocked pulsar wind.

  18. Characterization of crystallinity of Ge{sub 1−x}Sn{sub x} epitaxial layers grown using metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Inuzuka, Yuki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Ike, Shinichi; Asano, Takanori [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Japan Society for the Promotion of Science, Chiyoda-ku, Tokyo 102-8472 (Japan); Takeuchi, Wakana [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakatsuka, Osamu, E-mail: nakatuka@alice.xtal.nagoya-u.ac.jp [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2016-03-01

    The epitaxial growth of a Ge{sub 1−x}Sn{sub x} layer was examined using metal-organic chemical vapor deposition (MOCVD) with two types of Ge precursors; tetra-ethyl-germane (TEGe) and tertiary-butyl-germane (TBGe); and the Sn precursor tri-butyl-vinyl-tin (TBVSn). Though the growth of a Ge{sub 1−x}Sn{sub x} layer on a Ge(001) substrate by MOCVD has been reported, a high-Sn-content Ge{sub 1−x}Sn{sub x} layer and the exploration of MO material combinations for Ge{sub 1−x}Sn{sub x} growth have not been reported. Therefore, the epitaxial growth of a Ge{sub 1−x}Sn{sub x} layer on Ge(001) and Si(001) substrates was examined using these precursors. The Ge{sub 1−x}Sn{sub x} layers were pseudomorphically grown on a Ge(001) substrate, while the Ge{sub 1−x}Sn{sub x} layer with a high degree of strain relaxation was obtained on a Si(001) substrate. Additionally, it was found that the two Ge precursors have different growth temperature ranges, where the TBGe could realize a higher growth rate at a lower growth temperature than the TEGe. The Ge{sub 1−x}Sn{sub x} layers grown using a combination of TBGe and TBVSn exhibited a higher crystalline quality and a smoother surface compared with the Ge{sub 1−x}Sn{sub x} layer prepared by low-temperature molecular beam epitaxy. In this study, a Ge{sub 1−x}Sn{sub x} epitaxial layer with a Sn content as high as 5.1% on a Ge(001) substrate was achieved by MOCVD at 300 °C. - Highlights: • Tertiary-butyl-germane and tri-butyl-vinyl-tin are suitable for Ge{sub 1−x}Sn{sub x} MOCVD growth. • We achieved a Sn content of 5.1% in Ge{sub 1−x}Sn{sub x} epitaxial layer on Ge(001). • The Ge{sub 1−x}Sn{sub x} layers grown on Ge and Si by MOCVD have high crystalline quality.

  19. Ge/SiGe superlattices for nanostructured thermoelectric modules

    International Nuclear Information System (INIS)

    Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

    2013-01-01

    Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

  20. Characterization of high-T/sub c/ Nb--Ge thin films by ion scattering, ion-induced x-rays, and ion resonance techniques

    International Nuclear Information System (INIS)

    Miller, J.W.; Appleton, E.R.; Murphree, Q.C.; Gavaler, J.R.

    1976-01-01

    Thin films of high-T/sub c/ (21-22 0 K) Nb--Ge were analyzed using three ion bombardment techniques. The depth dependence of stoichiometry in these superconducting thin films is determined by the deconvolution of a series of Rutherford backscattering spectra using 2.0-3.2 MeV 4 He ions at several incidence and scattering angles. Confirmation of these results is provided by studying the yields of Nb and Ge characteristic X-rays as a function of the angle of beam incidence. The depth dependence of oxygen, or oxides of Nb and Ge, is of particular interest, but more difficult to determine. A very sharp ion scattering resonance 16 O (α,α) at 3.045 MeV was utilized to enhance the backscattered yield and depth sensitivity of oxygen determination. The combined use of these three techniques now provides a nearly complete and nondestructive means for the characterization of such films

  1. High transmittance contrast in amorphous to hexagonal phase of Ge2Sb2Te5: Reversible NIR-window

    Science.gov (United States)

    Singh, Palwinder; Singh, A. P.; Kanda, Neetu; Mishra, Monu; Gupta, Govind; Thakur, Anup

    2017-12-01

    Ge2Sb2Te5 (GST) is one of the best phase change materials because of its splendid set of properties, viz., high thermal stability, fast crystallization speed, good endurance, scalability, and reliability. Phase transition [amorphous → face centered cubic (fcc) → hexagonal close packed (hcp)] of GST thin films with annealing was studied using X-ray diffraction. Thin films in amorphous, fcc, and hcp phases are highly, medium, and negligible transparent in the near infra-red region, respectively. The optical transmission in amorphous, fcc, and hcp phases is ˜92%, ˜46%, and ˜2%, respectively, at the wavelength of 2740 nm. At 2740 nm, a high transmission contrast (˜90%) is observed with phase transition from the amorphous to hcp phase. By utilizing large transmission contrast, it is demonstrated that GST can be availed as a potential candidate for reversible near infra-red-window. The sharp change in optical transmission with phase transition can be understood from the change in density of states in the valence band.

  2. Design and environmental applications of an ultra-low-background, high-efficiency intrinsic Ge gamma-ray spectrometer

    International Nuclear Information System (INIS)

    Wogman, N.A.

    1981-04-01

    A coincidence shielded intrinsic Ge gamma-ray spectrometer incorporating a 25% efficient, high resolution coaxial diode inside a 30 cm diameter NaI(Tl) shield is described. System design eliminates the major cause of background and minimizes cosmic-ray created background events through the use of electronic means. The system provides a peak-to-Compton ratio of greater than 1000 to 1 for 137 Cs and high sensitivity for both low and high level radionuclide measurements. At 3 MeV the background is 0.000058 counts per minute per keV. At 1 MeV it is 0.00048 counts per minute per keV, and at 0.5 MeV it is 0.0045 counts per minute per keV. Traces of primordial radionuclides create background events such as at 2.614 MeV (0.016 counts per minute total peak area), at 2.448 MeV (0.0058 counts per minute per total peak area), and at 2.204 MeV (0.023 counts per minute per total peak area). The system is discussed with respect to its background design, methods to improve its design, and its application to measurements of neutron activated and environmental materials problems

  3. Effect of traps and defects on high temperature performance of Ge channel junctionless nanowire transistors

    Directory of Open Access Journals (Sweden)

    Chuanchuan Sun

    2017-07-01

    Full Text Available We investigate the effect of traps and defects on high temperature performance of p-type germanium-on-insulator (GOI based junctionless nanowire transistors (JNTs at temperatures ranging from 300 to 450 K. Temperature dependence of the main electrical parameters, such as drive current (Ion, leakage current (Ioff, threshold voltage (Vt, transconductance (Gm and subthreshold slope (SS are extracted and compared with the reported results of conventional inversion mode (IM MOSFETs and Si based JNTs. The results show that the high interface trap density (Dit and defects can degrade high temperature reliability of GOI based JNTs significantly, in terms of Ioff, Vt variation, Gm-max and SS values. The Ioff is much more dependent on temperature than Ion and mainly affected by trap-assisted-tunneling (TAT current. The Vt variation with temperature is larger than that for IM MOSFETs and SOI based JNTs, which can be mostly attributed to the high Dit. The high Dit can also induce high SS values. The maximum Gm has a weak dependence on temperature and is significantly influenced by neutral defects scattering. Limiting the Dit and neutral defect densities is critical for the reliability of GOI based JNTs working at high temperatures.

  4. Dwarf mutant of Papaver somniferum with high morphine content

    International Nuclear Information System (INIS)

    Chauhan, S.P.; Patra, N.K.; Srivastava, H.K.

    1987-01-01

    Opium poppy, Papaver somniferum L. is an important medicinal plant known for its morphine, codeine, and thebaine alkaloids. This Institute had earlier released two latex opium yielding poppy varieties, Shyama and Shweta, which are now cultivated by the farmers under the supervision of the Narcotic Department of the Government of India. However, both these varieties became susceptible to downy mildew (Peronospora arborescens). Lodging due to heavy capsule weight is another problem affecting latex yield. With these problems in mind, we undertook mutation breeding on the above mentioned two varieties employing gamma rays (5 kR, 15 kR, 20 kR) and EMS (0.2%, 0.4%, 0.6%) and combined mutagens (5 kR + 0.2% EMS, 5 kR + 0.4% EMS and 5 kR + 0.6% EMS). M 1 from the treated seeds (405 plants) was raised in winter 1984-85. M 2 generation of 13,500 plants (i.e. 270 M 1 progenies x 50 plants) was raised in winter 1985/86. A dwarf mutant with high morphine content was identified in M 2 from the variety Shweta treated with 5 kR + 0.4% EMS. The mutant differs by its dwarf stature, compact leaf arrangements, multilocular capsules, increased capsule number, and small capsule size. The mutant is under testing for its superior morphine production. It may be used as dwarf gene source in hybridization for improving lodging resistance. This mutant is a novel type, which was not available in our germplasm collection

  5. Atomic structure of a stable high-index Ge surface: G2(103)-(4x1)

    DEFF Research Database (Denmark)

    Seehofer, L.; Bunk, O.; Falkenberg, G.

    1997-01-01

    Based on scanning tunneling microscopy and surface X-ray diffraction, we propose a complex structural model for the Ge(103)-(4 x 1) reconstruction. Each unit cell contains two (103) double steps, which gives rise to the formation of stripes of Ge atoms oriented in the [] direction....... The stripes and the spaces between them are covered with threefold-coordinated Ge adatoms. Charge is transferred from the bulk-like edge atoms of the double steps to the adatoms. The formation of the reconstruction can be explained in terms of stress relief, charge transfer, and minimization of the dangling...

  6. Atomic layer deposition of crystalline SrHfO{sub 3} directly on Ge (001) for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Jiang, Aiting; Yu, Edward T. [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Lu, Sirong; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-02-07

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO{sub 3} (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10{sup −5} A/cm{sup 2} at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D{sub it}) is estimated to be as low as ∼2 × 10{sup 12 }cm{sup −2 }eV{sup −1} under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D{sub it} value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

  7. Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

    Science.gov (United States)

    Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John

    2018-02-01

    Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.

  8. Evaluation of the characteristics of high burnup and high plutonium content mixed oxide (MOX) fuel

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2012-08-15

    Two kinds of MOX fuel irradiation tests, i.e., MOX irradiation test up to high burnup and MOX having high plutonium content irradiation test, have been performed from JFY 2007 for five years in order to establish technical data concerning MOX fuel behavior during irradiation, which shall be needed in safety regulation of MOX fuel with high reliability. The high burnup MOX irradiation test consists of irradiation extension and post irradiation examination (PIE). The activities done in JFY 2011 are destructive post irradiation examination (D-PIE) such as EPMA and SIMS at CEA (Commissariat a l'Enegie Atomique) facility. Cadarache and PIE data analysis. In the frame of irradiation test of high plutonium content MOX fuel programme, MOX fuel rods with about 14wt % Pu content are being irradiated at BR-2 reactor and corresponding PIE is also being done at PIE facility (SCK/CEN: Studiecentrum voor Kernenergie/Centre d'Etude l'Energie Nucleaire) in Belgium. The activities done in JFY 2011 are non-destructive post irradiation examination (ND-PIE) and D-PIE and PIE data analysis. In this report the results of EPMA and SIMS with high burnup irradiation test and the result of gamma spectrometry measurement which can give FP gas release rate are reported. (author)

  9. High-performance flexible resistive memory devices based on Al2O3:GeOx composite

    Science.gov (United States)

    Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

    2018-05-01

    In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

  10. Volume-change-free GeTeN films for high-performance phase-change memory

    International Nuclear Information System (INIS)

    Yin, You; Hosaka, Sumio; Zhang, Hui; Liu, Yang; Yu, Qi

    2013-01-01

    N-doping into GeTe is investigated with the aim of reducing the volume change upon crystallization, which usually induces a huge internal stress in phase-change memory devices. It is demonstrated that the thickness change upon crystallization of a N-doped GeTe (GeTeN) film is almost zero when N is doped in an appropriate amount. Cracks resulting from the stress caused by volume change disappear and the mean crystal size decreases by more than 50% upon N-doping into GeTe. It is thought that the volume-change-free behaviour is due to the formation of low-density nitride and grain refinement. (paper)

  11. Characterization of Ge Doping on Sb_2Te_3 for High-Speed Phase Change Memory Application

    International Nuclear Information System (INIS)

    Zhu Yue-Qin; Xie Hua-Qing; Zhang Zhong-Hua; Song San-Nian; Song Zhi-Tang; Shen Lan-Lan; Li Le; Wu Liang-Cai; Liu Bo

    2015-01-01

    The phase change material of Ge-doped Sb_2Te_3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb_2Te_3. Ge_0_._1_1Sb_2Te_3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge_2Sb_2Te_5. In addition, Ge_0_._1_1Sb_2Te_3 presents extremely rapid reverse switching speed (10 ns), and up to 10"5 programming cycles are obtained with stable set and reset resistances. (paper)

  12. Ultra high energy cosmic rays above 10 GeV: Hints to new physics ...

    Indian Academy of Sciences (India)

    Ultra high energy cosmic rays; physics beyond standard model. ... The origin of the observed cosmic ray (CR) events above 10ѕј eV — the so-called ex- .... to arise simply from decay of some supermassive particles (of mass> 10ѕЅ eV) ...

  13. Development of twin Ge detector for high energy photon measurement and its performance

    Energy Technology Data Exchange (ETDEWEB)

    Shigetome, Yoshiaki; Harada, Hideo [Power Reactor and Nuclear Fuel Development Corp., Tokai, Ibaraki (Japan). Tokai Works

    1998-03-01

    Prototype twin HPGe detector composed of two large HPGe crystals was developed to obtain better detection efficiency ({epsilon}) and P/T ratio, which was required for high energy photon spectroscopy. In this work, the performances of the twin HPGe detector were evaluated by computer simulation employing EGS4 code. (author)

  14. Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

    DEFF Research Database (Denmark)

    Shayesteh, M.; O'Connell, D.; Gity, F.

    2014-01-01

    The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ide...

  15. Corrosion resistance testing of high-boron-content stainless steels

    International Nuclear Information System (INIS)

    Petrman, I.; Safek, V.

    1994-01-01

    Boron steels, i.e. stainless steels with boron contents of 0.2 to 2.25 wt.%, are employed in nuclear engineering for the manufacture of baskets or wells in which radioactive fissile materials are stored, mostly spent nuclear fuel elements. The resistance of such steels to intergranular corrosion and uniform corrosion was examined in the Strauss solution and in boric acid; the dependence of the corrosion rate of the steels on their chemical composition was investigated, and their resistance was compared with that of AISI 304 type steel. Corrosion resistance tests in actual conditions of ''wet'' compact storage (demineralized water or a weak boric acid solution) gave evidence that boron steels undergo nearly no uniform corrosion and, as electrochemical measurements indicated, match standard corrosion-resistant steels. Corrosion resistance was confirmed to decrease slightly with increasing boron content and to increase somewhat with increasing molybdenum content. (Z.S.). 3 tabs., 4 figs., 7 refs

  16. Analysis of the proton-induced reactions at 150 MeV - 24 GeV by high energy nuclear reaction code JAM

    International Nuclear Information System (INIS)

    Niita, Koji; Nara, Yasushi; Takada, Hiroshi; Nakashima, Hiroshi; Chiba, Satoshi; Ikeda, Yujiro

    1999-09-01

    We are developing a nucleon-meson transport code NMTC/JAM, which is an upgraded version of NMTC/JAERI. NMTC/JAM implements the high energy nuclear reaction code JAM for the infra-nuclear cascade part. By using JAM, the upper limits of the incident energies in NMTC/JAERI, 3.5 GeV for nucleons and 2.5 GeV for mesons, are increased drastically up to several hundreds GeV. We have modified the original JAM code in order to estimate the residual nucleus and its excitation energy for nucleon or pion induced reactions by assuming a simple model for target nucleus. As a result, we have succeeded in lowering the applicable energies of JAM down to about 150 MeV. In this report, we describe the main components of JAM code, which should be implemented in NMTC/JAM, and compare the results calculated by JAM code with the experimental data and with those by LAHET2.7 code for proton induced reactions from 150 MeV to several 10 GeV. It has been found that the results of JAM can reproduce quite well the experimental double differential cross sections of neutrons and pions emitted from the proton induced reactions from 150 MeV to several 10 GeV. On the other hand, the results of LAHET2.7 show the strange behavior of the angular distribution of nucleons and pions from the reactions above 4 GeV. (author)

  17. High field magnetism and magnetoacoustics in UCu.sub.0.95./sub.Ge

    Czech Academy of Sciences Publication Activity Database

    Zvyagin, A.A.; Yasin, S.; Skourski, Y.; Andreev, Alexander V.; Zherlitsyn, S.; Wosnitza, J.

    2012-01-01

    Roč. 528, JUL (2012), s. 51-57 ISSN 0925-8388 R&D Projects: GA ČR GAP204/12/0150 Grant - others:EuroMagNET(XE) 228043 Institutional research plan: CEZ:AV0Z10100520 Keywords : uranium intermetallics * single crystals * antiferromagnetism * high fields * acoustics * magnetoelasticity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.390, year: 2012

  18. The Content of Literature in the High School.

    Science.gov (United States)

    Burton, Dwight L.

    The content of a literature program defined in terms of the structure of literature is proposed. A three-layer definition of structure is suggested which considers (1) the substance of literature, including man and his gods, man and the natural world, man and other men, and man and himself; (2) mode in literature, including the romantic, comic,…

  19. Pedagogical Content Knowledge and Preparation of High School Physics Teachers

    Science.gov (United States)

    Etkina, Eugenia

    2010-01-01

    This paper contains a scholarly description of pedagogical practices of the Rutgers Physics/Physical Science Teacher Preparation program. The program focuses on three aspects of teacher preparation: knowledge of physics, knowledge of pedagogy, and knowledge of how to teach physics (pedagogical content knowledge--PCK). The program has been in place…

  20. Nitrogen-fixing cyanobacterium with a high phycoerythrin content.

    Science.gov (United States)

    Rodriguez, H; Rivas, J; Guerrero, M G; Losada, M

    1989-03-01

    The elemental and molecular composition, pigment content, and productivity of a phycoerythrin-rich nitrogen-fixing cyanobacterium-an Anabaena strain isolated from the coastal lagoon Albufera de Valencia, Spain-has been investigated. When compared with other heterocystous species, this strain exhibits similar chlorophyll a, carotene, and total phycobiliprotein contents but differs remarkably in the relative proportion of specific phycobiliproteins; the content of C-phycoerythrin amounts to 8.3% (versus about 1% in the other species) of cell dry weight. Absorption and fluorescence spectra of intact phycobilisomes isolated from this Anabaena sp. corroborate the marked contribution of phycoerythrin as an antenna pigment, a circumstance that is unusual for cyanobacteria capable of fixing N(2). The pigment content of cells is affected by variations in irradiance and cell density, these adaptive changes being more patent for C-phycoerythrin than for phycocyanins. The Anabaena strain is clumpy and capable of rapid flocculation. It exhibits outdoor productivities higher than 20 g (dry weight) m day during summer.

  1. HP Ge planar detectors

    International Nuclear Information System (INIS)

    Gornov, M.G.; Gurov, Yu.B.; Soldatov, A.M.; Osipenko, B.P.; Yurkowski, J.; Podkopaev, O.I.

    1989-01-01

    Parameters of planar detectors manufactured of HP Ge are presented. The possibilities to use multilayer spectrometers on the base of such semiconductor detectors for nuclear physics experiments are discussed. It is shown that the obtained detectors including high square ones have spectrometrical characteristics close to limiting possible values. 9 refs.; 3 figs.; 1 tab

  2. Effects of thermal history and irradiation on the dc conductivity of high purity GeO2 glasses

    International Nuclear Information System (INIS)

    Magruder, R.H.

    1985-01-01

    The dc electrical properties of a series of high purity GeO 2 glasses fused and equilibrated at various temperatures (T phi) in air were measured. T phi ranged from 1350 0 C to 1690 0 C. The charge carriers are shown to be the Na ions. The mobility is found to obey an Arrhenius function with enthalpy of activation of approximately 1.01 eV in the as-quenched state for all T phi's. The changes observed in the mobilities of the Na ions for the various T phi's are suggested to be caused by changes in the configurational coordinates of the average interstitial sites through which the Na ion moves with changes in T phi. These changes are manifested in the entropy of activation. Subsequent annealing treatments at 420 0 C (15 0 below the Littleton softening point) for the times observed in these experiments do not change the general behavior of the mobility with T phi even though they do change the observed values of mobilities. These changes are suggested to result from thermal compaction changing the average well structure through which the Na ion moves. The γ irradiation of these glasses causes a decrease in the mobility of the Na ion for all T phi samples. The mobilities decreases with increasing dose. These decreases in mobilities are suggested to be caused by radiation induced compaction and by change of defect concentrations. These two processes result through relaxation processes and coulombic forces in changes in the average well structure

  3. Hadron production in high energy muon scattering. [Quark-parton model, 225 GeV, structure functions, particle ratios

    Energy Technology Data Exchange (ETDEWEB)

    Hicks, R.G.

    1978-01-01

    An experiment was performed to study muon-proton scattering at an incident energy of 225 GeV and a total effective flux of 4.3 x 10/sup 10/ muons. This experiment is able to detect charged particles in coincidence with the scattered muon in the forward hemisphere, and results are reported for the neutral strange particles K/sub s//sup 0/ and ..lambda../sup 0/ decaying into two charged particles. Within experimental limits the masses and lifetimes of these particles are consistent with previous measurements. The distribution of hadrons produced in muon scattering is determined, measuring momentum components parallel and transverse to the virtual photon direction, and these distributions are compared to other high energy experiments involving the scattering of pions, protons, and neutrinos from protons. Structure functions for hadron production and particle ratios are calculated. No azimuthal dependence is observed, and lambda production does not appear to be polarized. The physical significance of the results is discussed within the framework of the quark-parton model. 29 references.

  4. High-Pressure Study of Perovskites and Postperovskites in the (Mg,Fe)GeO 3 System

    Energy Technology Data Exchange (ETDEWEB)

    Stan, Camelia V.; Dutta, Rajkrishna; Cava, Robert J.; Prakapenka, Vitali B.; Duffy, Thomas S. (Princeton); (UC)

    2017-06-22

    The effect of incorporation of Fe2+ on the perovskite (Pbnm) and postperovskite (Cmcm) structures was investigated in the (Mg,Fe)GeO3 system at high pressures and temperatures using laser-heated diamond anvil cell and synchrotron X-ray diffraction. Samples with compositions of Mg# ≥ 48 were shown to transform to the perovskite (~30 GPa and ~1500 K) and postperovskite (>55 GPa, ~1600–1800 K) structures. Compositions with Mg# ≥ 78 formed single-phase perovskite and postperovskite, whereas those with Mg# < 78 showed evidence for partial decomposition. The incorporation of Fe into the perovskite structure causes a decrease in octahedral distortion as well as a modest decrease in bulk modulus (K0) and a modest increase in zero-pressure volume (V0). It also leads to a decrease in the perovskite-to-postperovskite phase transition pressure by ~9.5 GPa over compositions from Mg#78 to Mg#100.

  5. High water content in primitive continental flood basalts.

    Science.gov (United States)

    Xia, Qun-Ke; Bi, Yao; Li, Pei; Tian, Wei; Wei, Xun; Chen, Han-Lin

    2016-05-04

    As the main constituent of large igneous provinces, the generation of continental flood basalts (CFB) that are characterized by huge eruption volume (>10(5) km(3)) within short time span (primitive CFB in the early Permian Tarim large igneous province (NW China), using the H2O content of ten early-formed clinopyroxene (cpx) crystals that recorded the composition of the primitive Tarim basaltic melts and the partition coefficient of H2O between cpx and basaltic melt. The arc-like H2O content (4.82 ± 1.00 wt.%) provides the first clear evidence that H2O plays an important role in the generation of CFB.

  6. Isothermal cross-sections of Sr-Al-Ge and Ba-Al-Ge systems at 673 K

    International Nuclear Information System (INIS)

    Kutsenok, N.L.; Yanson, T.I.

    1987-01-01

    X-ray and microstructural analyses are used to study phase equilibria in Sr-Al-Ge and Ba-Al-Ge systems. Existence of SrAl 2 Ge 2 , Sr(Al, Ge) 2 Ba(Al, Ge) 2 , Sr 3 Al 2 Ge 2 , Ba 3 Al 2 Ge 2 ternary compounds is confirmed, a new BaGe 4 binary compound and also new ternary compounds of approximate composition Sr 57 Al 30 Ge 13 and Ba 20 Al 40 Ge 40 , which crystal structure is unknown, are detected. Aluminium solubility in SrAl 4 and BaAl 4 binary compounds (0.05 atomic fraction) is determined. Ba(Al, Ge) 2 compound homogeneity region is defined more exactly (aluminium content varies from 0.27 to 0.51 at. fractions)

  7. Pedagogical content knowledge and preparation of high school physics teachers

    OpenAIRE

    Eugenia Etkina

    2010-01-01

    This paper contains a scholarly description of pedagogical practices of the Rutgers Physics/Physical Science Teacher Preparation program. The program focuses on three aspects of teacher preparation: knowledge of physics, knowledge of pedagogy, and knowledge of how to teach physics (pedagogical content knowledge—PCK). The program has been in place for 7 years and has a steady production rate of an average of six teachers per year who remain in the profession. The main purpose of the paper is t...

  8. Wafer-scale high-throughput ordered arrays of Si and coaxial Si/Si(1-x)Ge(x) wires: fabrication, characterization, and photovoltaic application.

    Science.gov (United States)

    Pan, Caofeng; Luo, Zhixiang; Xu, Chen; Luo, Jun; Liang, Renrong; Zhu, Guang; Wu, Wenzhuo; Guo, Wenxi; Yan, Xingxu; Xu, Jun; Wang, Zhong Lin; Zhu, Jing

    2011-08-23

    We have developed a method combining lithography and catalytic etching to fabricate large-area (uniform coverage over an entire 5-in. wafer) arrays of vertically aligned single-crystal Si nanowires with high throughput. Coaxial n-Si/p-SiGe wire arrays are also fabricated by further coating single-crystal epitaxial SiGe layers on the Si wires using ultrahigh vacuum chemical vapor deposition (UHVCVD). This method allows precise control over the diameter, length, density, spacing, orientation, shape, pattern and location of the Si and Si/SiGe nanowire arrays, making it possible to fabricate an array of devices based on rationally designed nanowire arrays. A proposed fabrication mechanism of the etching process is presented. Inspired by the excellent antireflection properties of the Si/SiGe wire arrays, we built solar cells based on the arrays of these wires containing radial junctions, an example of which exhibits an open circuit voltage (V(oc)) of 650 mV, a short-circuit current density (J(sc)) of 8.38 mA/cm(2), a fill factor of 0.60, and an energy conversion efficiency (η) of 3.26%. Such a p-n radial structure will have a great potential application for cost-efficient photovoltaic (PV) solar energy conversion. © 2011 American Chemical Society

  9. Development of high-polarization Fe/Ge neutron polarizing supermirror: Possibility of fine-tuning of scattering length density in ion beam sputtering

    Science.gov (United States)

    Maruyama, R.; Yamazaki, D.; Akutsu, K.; Hanashima, T.; Miyata, N.; Aoki, H.; Takeda, M.; Soyama, K.

    2018-04-01

    The multilayer structure of Fe/Si and Fe/Ge systems fabricated by ion beam sputtering (IBS) was investigated using X-ray and polarized neutron reflectivity measurements and scanning transmission electron microscopy with energy-dispersive X-ray analysis. The obtained result revealed that the incorporation of sputtering gas particles (Ar) in the Ge layer gives rise to a marked reduction in the neutron scattering length density (SLD) and contributes to the SLD contrast between the Fe and Ge layers almost vanishing for spin-down neutrons. Bundesmann et al. (2015) have shown that the implantation of primary Ar ions backscattered at the target is responsible for the incorporation of Ar particles and that the fraction increases with increasing ion incidence angle and increasing polar emission angle. This leads to a possibility of fine-tuning of the SLD for the IBS, which is required to realize a high polarization efficiency of a neutron polarizing supermirror. Fe/Ge polarizing supermirror with m = 5 fabricated under the same condition showed a spin-up reflectivity of 0.70 at the critical momentum transfer. The polarization was higher than 0.985 for the qz range where the correction for the polarization inefficiencies of the beamline works properly. The result of the polarized neutron reflectivity measurement suggests that the "magnetically-dead" layers formed at both sides of the Fe layer, together with the SLD contrast, play a critical role in determining the polarization performance of a polarizing supermirror.

  10. Decomposition kinetics of expanded austenite with high nitrogen contents

    DEFF Research Database (Denmark)

    Christiansen, Thomas; Somers, Marcel A. J.

    2006-01-01

    This paper addresses the decomposition kinetics of synthesized homogeneous expanded austenite formed by gaseous nitriding of stainless steel AISI 304L and AISI 316L with nitrogen contents up to 38 at.% nitrogen. Isochronal annealing experiments were carried out in both inert (N2) and reducing (H2......) atmospheres. Differential thermal analysis (DTA) and thermogravimetry were applied for identification of the decomposition reactions and X-ray diffraction analysis was applied for phase analysis. CrN precipitated upon annealing; the activation energies are 187 kJ/mol and 128 kJ/mol for AISI 316L and AISI 304L...

  11. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  12. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    Energy Technology Data Exchange (ETDEWEB)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to −190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from −20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  13. High nitrogen availability reduces polyphenol content in Sphagnum peat.

    Science.gov (United States)

    Bragazza, Luca; Freeman, Chris

    2007-05-15

    Peat mosses of the genus Sphagnum constitute the bulk of living and dead biomass in bogs. These plants contain peculiar polyphenols which hamper litter peat decomposition through their inhibitory activity on microbial breakdown. In the light of the increasing availability of biologically active nitrogen in natural ecosystems, litter derived from Sphagnum mosses is an ideal substrate to test the potential effects of increased atmospheric nitrogen deposition on polyphenol content in litter peat. To this aim, we measured total nitrogen and soluble polyphenol concentration in Sphagnum litter peat collected in 11 European bogs under a chronic gradient of atmospheric nitrogen deposition. Our results demonstrate that increasing nitrogen concentration in Sphagnum litter, as a consequence of increased exogenous nitrogen availability, is accompanied by a decreasing concentration of polyphenols. This inverse relationship is consistent with reports that in Sphagnum mosses, polyphenol and protein biosynthesis compete for the same precursor. Our observation of modified Sphagnum litter chemistry under chronic nitrogen eutrophication has implications in the context of the global carbon balance, because a lower content of decay-inhibiting polyphenols would accelerate litter peat decomposition.

  14. Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications

    Science.gov (United States)

    Nie, Tianxiao; Tang, Jianshi; Wang, Kang L.

    2015-09-01

    In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1-x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.

  15. Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

    International Nuclear Information System (INIS)

    Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

    2008-01-01

    We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching

  16. Pedagogical content knowledge and preparation of high school physics teachers

    Directory of Open Access Journals (Sweden)

    Eugenia Etkina

    2010-08-01

    Full Text Available This paper contains a scholarly description of pedagogical practices of the Rutgers Physics/Physical Science Teacher Preparation program. The program focuses on three aspects of teacher preparation: knowledge of physics, knowledge of pedagogy, and knowledge of how to teach physics (pedagogical content knowledge—PCK. The program has been in place for 7 years and has a steady production rate of an average of six teachers per year who remain in the profession. The main purpose of the paper is to provide information about a possible structure, organization, and individual elements of a program that prepares physics teachers. The philosophy of the program and the coursework can be implemented either in a physics department or in a school of education. The paper provides details about the program course work and teaching experiences and suggests ways to adapt it to other local conditions.

  17. Automated microscopy for high-content RNAi screening

    Science.gov (United States)

    2010-01-01

    Fluorescence microscopy is one of the most powerful tools to investigate complex cellular processes such as cell division, cell motility, or intracellular trafficking. The availability of RNA interference (RNAi) technology and automated microscopy has opened the possibility to perform cellular imaging in functional genomics and other large-scale applications. Although imaging often dramatically increases the content of a screening assay, it poses new challenges to achieve accurate quantitative annotation and therefore needs to be carefully adjusted to the specific needs of individual screening applications. In this review, we discuss principles of assay design, large-scale RNAi, microscope automation, and computational data analysis. We highlight strategies for imaging-based RNAi screening adapted to different library and assay designs. PMID:20176920

  18. Direct growth of Ge1-xSnx films on Si using a cold-wall ultra-high-vacuum chemical-vapor-deposition system

    Directory of Open Access Journals (Sweden)

    Aboozar eMosleh

    2015-04-01

    Full Text Available Germanium tin alloys were grown directly on Si substrate at low temperatures using a cold-wall ultra-high vacuum chemical vapor deposition system. Epitaxial growth was achieved by adopting commercial gas precursors of germane and stannic chloride without any carrier gases. The X-ray diffraction analysis showed the incorporation of Sn and that the Ge1-xSnx films are fully epitaxial and strain relaxed. Tin incorporation in the Ge matrix was found to vary from 1% to 7%. The scanning electron microscopy images and energy dispersive X-ray spectra maps show uniform Sn incorporation and continuous film growth. Investigation of deposition parameters shows that at high flow rates of stannic chloride the films were etched due to the production of HCl. The photoluminescence study shows the reduction of bandgap from 0.8 eV to 0.55 eV as a result of Sn incorporation.

  19. Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gouder, S.; Mahamdi, R.; Aouassa, M.; Escoubas, S.; Favre, L.; Ronda, A.; Berbezier, I.

    2014-01-01

    Thick porous silicon (PS) buffer layers are used as sacrificial layers to epitaxially grow planar and fully relaxed Ge membranes. The single crystal Ge layers have been deposited by molecular beam epitaxy (MBE) on PS substrate. During deposition, the pore network of PS layers has been filled with Ge. We investigate the structure and morphology of PS as fabricated and after annealing at various temperatures. We show that the PS crystalline lattice is distorted and expanded in the direction perpendicular to the substrate plane due to the presence of chemisorbed –OH. An annealing at high temperature (> 500 °C), greatly changes the PS morphology and structure. This change is marked by an increase of the pore diameter while the lattice parameter becomes tensily strained in the plane (compressed in the direction perpendicular). The morphology and structure of Ge layers are investigated by transmission electron microscopy, high resolution X-ray diffraction and atomic force microscopy as a function of the deposition temperature and deposited thickness. The results show that the surface roughness, level of relaxation and Si-Ge intermixing (Ge content) depend on the growth temperature and deposited thickness. Two sub-layers are distinguished: the layer incorporated inside the PS pores (high level of intermixing) and the layer on top of the PS surface (low level of intermixing). When deposited at temperature > 500 °C, the Ge layers are fully relaxed with a top Si 1−x Ge x layer x = 0.74 and a very flat surface. Such layer can serve as fully relaxed ultra-thin SiGe pseudo-substrate with high Ge content. The epitaxy of Ge on sacrificial soft PS pseudo-substrate in the experimental conditions described here provides an easy way to fabricate fully relaxed SiGe pseudo-substrates. Moreover, Ge thin films epitaxially deposited by MBE on PS could be used as relaxed pseudo-substrate in conventional microelectronic technology. - Highlights: • We have developed a rapid and low

  20. Emissions in 2001 conform the reference scenario (GE WLO with high oil price) and including Clean and Efficient

    International Nuclear Information System (INIS)

    Kroon, P.; Menkveld, M.

    2008-08-01

    This memo shows the calculation of an estimate for the total greenhouse gas emissions in 2011 in the reference scenario (GE WLO is the Dutch abbreviation for Global Economy and Welfare and Environment), including the impact of the Clean and Efficient programme from the assessment of ECN (Energy research Centre of the Netherlands) and MNP (Netherlands Environmental Assessment Agency) [nl

  1. Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure

    International Nuclear Information System (INIS)

    Yuan, C L; Lee, P S

    2008-01-01

    A Ge/GeO 2 core/shell nanostructure embedded in an Al 2 O 3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO 2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO 2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering

  2. Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.

    Science.gov (United States)

    Yuan, C L; Lee, P S

    2008-09-03

    A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

  3. Ge-Au eutectic bonding of Ge (100) single crystals

    International Nuclear Information System (INIS)

    Knowlton, W.B.; Beeman, J.W.; Emes, J.H.; Loretto, D.; Itoh, K.M.; Haller, E.E.

    1993-01-01

    The author present preliminary results on the eutectic bonding between two (100) Ge single crystal surfaces using thin films of Au ranging from 900 angstrom/surface to 300 angstrom/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500 angstrom/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300 angstrom/surface Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200 angstrom/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150 angstrom across an interval of lmm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons

  4. Non-combustible nuclear radiation shields with high hydrogen content

    International Nuclear Information System (INIS)

    Hall, W.C.; Peterson, J.M.

    1978-01-01

    The invention relates to compositions, methods of production, and uses of non-combustible nuclear radiation shields, with particular emphasis on those containing a high concentration of hydrogen atoms, especially effective for moderating neutron energy by elastic scatter, dispersed as a discontinuous phase in a continuous phase of a fire resistant matrix

  5. An Introduction to Computing: Content for a High School Course.

    Science.gov (United States)

    Rogers, Jean B.

    A general outline of the topics that might be covered in a computers and computing course for high school students is provided. Topics are listed in the order in which they should be taught, and the relative amount of time to be spent on each topic is suggested. Seven units are included in the course outline: (1) general introduction, (2) using…

  6. Discharge efficiency in high-Xe-content plasma display panels

    NARCIS (Netherlands)

    Hayashi, D.; Kroesen, G.M.W.; Hagelaar, G.J.M.; Heusler, G.

    2004-01-01

    We study theoretically the overall output performance and the dominating reaction processes of the vacuum ultraviolet (UV) radiation production in high-Xe partial pressures in plasma display panels (PDPs) with Ne-Xe gas mixtures. A two-dimensional self-consistent fluid model is applied for the

  7. Transverse momentum and centrality dependence of high-pT nonphotonic electron suppression in Au+Au collisions at sqrt[s NN]=200 GeV.

    Science.gov (United States)

    Abelev, B I; Aggarwal, M M; Ahammed, Z; Anderson, B D; Arkhipkin, D; Averichev, G S; Bai, Y; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Baumgart, S; Belaga, V V; Bellingeri-Laurikainen, A; Bellwied, R; Benedosso, F; Betts, R R; Bhardwaj, S; Bhasin, A; Bhati, A K; Bichsel, H; Bielcik, J; Bielcikova, J; Bland, L C; Blyth, S-L; Bombara, M; Bonner, B E; Botje, M; Bouchet, J; Brandin, A V; Bravar, A; Burton, T P; Bystersky, M; Cadman, R V; Cai, X Z; Caines, H; Calderón de la Barca Sánchez, M; Callner, J; Catu, O; Cebra, D; Chajecki, Z; Chaloupka, P; Chattopadhyay, S; Chen, H F; Chen, J H; Chen, J Y; Cheng, J; Cherney, M; Chikanian, A; Christie, W; Chung, S U; Coffin, J P; Cormier, T M; Cosentino, M R; Cramer, J G; Crawford, H J; Das, D; Dash, S; Daugherity, M; de Moura, M M; Dedovich, T G; Dephillips, M; Derevschikov, A A; Didenko, L; Dietel, T; Djawotho, P; Dogra, S M; Dong, X; Drachenberg, J L; Draper, J E; Du, F; Dunin, V B; Dunlop, J C; Dutta Mazumdar, M R; Eckardt, V; Edwards, W R; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Estienne, M; Fachini, P; Fatemi, R; Fedorisin, J; Feng, A; Filip, P; Finch, E; Fine, V; Fisyak, Y; Fu, J; Gagliardi, C A; Gaillard, L; Ganti, M S; Garcia-Solis, E; Ghazikhanian, V; Ghosh, P; Gorbunov, Y G; Gos, H; Grebenyuk, O; Grosnick, D; Guertin, S M; Guimaraes, K S F F; Gupta, N; Haag, B; Hallman, T J; Hamed, A; Harris, J W; He, W; Heinz, M; Henry, T W; Heppelmann, S; Hippolyte, B; Hirsch, A; Hjort, E; Hoffman, A M; Hoffmann, G W; Hofman, D; Hollis, R; Horner, M J; Huang, H Z; Hughes, E W; Humanic, T J; Igo, G; Iordanova, A; Jacobs, P; Jacobs, W W; Jakl, P; Jia, F; Jones, P G; Judd, E G; Kabana, S; Kang, K; Kapitan, J; Kaplan, M; Keane, D; Kechechyan, A; Kettler, D; Khodyrev, V Yu; Kim, B C; Kiryluk, J; Kisiel, A; Kislov, E M; Klein, S R; Knospe, A G; Kocoloski, A; Koetke, D D; Kollegger, T; Kopytine, M; Kotchenda, L; Kouchpil, V; Kowalik, K L; Kravtsov, P; Kravtsov, V I; Krueger, K; Kuhn, C; Kulikov, A I; Kumar, A; Kurnadi, P; Kuznetsov, A A; Lamont, M A C; Landgraf, J M; Lange, S; Lapointe, S; Laue, F; Lauret, J; Lebedev, A; Lednicky, R; Lee, C-H; Lehocka, S; LeVine, M J; Li, C; Li, Q; Li, Y; Lin, G; Lin, X; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, H; Liu, J; Liu, L; Ljubicic, T; Llope, W J; Longacre, R S; Love, W A; Lu, Y; Ludlam, T; Lynn, D; Ma, G L; Ma, J G; Ma, Y G; Magestro, D; Mahapatra, D P; Majka, R; Mangotra, L K; Manweiler, R; Margetis, S; Markert, C; Martin, L; Matis, H S; Matulenko, Yu A; McClain, C J; McShane, T S; Melnick, Yu; Meschanin, A; Millane, J; Miller, M L; Minaev, N G; Mioduszewski, S; Mironov, C; Mischke, A; Mitchell, J; Mohanty, B; Morozov, D A; Munhoz, M G; Nandi, B K; Nattrass, C; Nayak, T K; Nelson, J M; Nepali, N S; Netrakanti, P K; Nogach, L V; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Pachr, M; Pal, S K; Panebratsev, Y; Pavlinov, A I; Pawlak, T; Peitzmann, T; Perevoztchikov, V; Perkins, C; Peryt, W; Phatak, S C; Planinic, M; Pluta, J; Poljak, N; Porile, N; Poskanzer, A M; Potekhin, M; Potrebenikova, E; Potukuchi, B V K S; Prindle, D; Pruneau, C; Putschke, J; Qattan, I A; Raniwala, R; Raniwala, S; Ray, R L; Relyea, D; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Rose, A; Roy, C; Ruan, L; Russcher, M J; Sahoo, R; Sakrejda, I; Sakuma, T; Salur, S; Sandweiss, J; Sarsour, M; Sazhin, P S; Schambach, J; Scharenberg, R P; Schmitz, N; Seger, J; Selyuzhenkov, I; Seyboth, P; Shabetai, A; Shahaliev, E; Shao, M; Sharma, M; Shen, W Q; Shimanskiy, S S; Sichtermann, E P; Simon, F; Singaraju, R N; Smirnov, N; Snellings, R; Sorensen, P; Sowinski, J; Speltz, J; Spinka, H M; Srivastava, B; Stadnik, A; Stanislaus, T D S; Staszak, D; Stock, R; Strikhanov, M; Stringfellow, B; Suaide, A A P; Suarez, M C; Subba, N L; Sumbera, M; Sun, X M; Sun, Z; Surrow, B; Symons, T J M; Szanto de Toledo, A; Takahashi, J; Tang, A H; Tarnowsky, T; Thomas, J H; Timmins, A R; Timoshenko, S; Tokarev, M; Trainor, T A; Trentalange, S; Tribble, R E; Tsai, O D; Ulery, J; Ullrich, T; Underwood, D G; Van Buren, G; van der Kolk, N; van Leeuwen, M; Vander Molen, A M; Varma, R; Vasilevski, I M; Vasiliev, A N; Vernet, R; Vigdor, S E; Viyogi, Y P; Vokal, S; Voloshin, S A; Waggoner, W T; Wang, F; Wang, G; Wang, J S; Wang, X L; Wang, Y; Watson, J W; Webb, J C; Westfall, G D; Wetzler, A; Whitten, C; Wieman, H; Wissink, S W; Witt, R; Wu, J; Wu, Y; Xu, N; Xu, Q H; Xu, Z; Yepes, P; Yoo, I-K; Yue, Q; Yurevich, V I; Zhan, W; Zhang, H; Zhang, W M; Zhang, Y; Zhang, Z P; Zhao, Y; Zhong, C; Zhou, J; Zoulkarneev, R; Zoulkarneeva, Y; Zubarev, A N; Zuo, J X

    2007-05-11

    The STAR collaboration at the BNL Relativistic Heavy-Ion Collider (RHIC) reports measurements of the inclusive yield of nonphotonic electrons, which arise dominantly from semileptonic decays of heavy flavor mesons, over a broad range of transverse momenta (1.2GeV/c) in p+p, d+Au, and Au+Au collisions at sqrt[s_{NN}]=200 GeV. The nonphotonic electron yield exhibits an unexpectedly large suppression in central Au+Au collisions at high p(T), suggesting substantial heavy-quark energy loss at RHIC. The centrality and p(T) dependences of the suppression provide constraints on theoretical models of suppression.

  8. Magnetic properties of spinels GeNi2-xCoxO4 systems: Green's function and high-temperature series expansions

    Science.gov (United States)

    El Grini, A.; Salmi, S.; Masrour, R.; Hamedoun, M.; Bouslykhane, K.; Marzouk, A.; Hourmatallah, A.; Benzakour, N.

    2018-06-01

    The Green's function theory and high-temperature series expansions technical have been developed for magnetic systems GeNi2-xCoxO4. We have applied the Green's function theory to evaluate thermal magnetization and magnetic susceptibility for different values of magnetic field and dilution x, considering all components of the magnetization when an external magnetic field is applied in (x,z)-plane. The second theory combined with the Padé approximants method for a randomly diluted Heisenberg magnet is used to deduce the magnetic phase diagram of GeNi2 - xCoxO4 systems. The critical exponents ? and ? and associated with the magnetic susceptibility ? and the correlation length ξ, respectively, have been deduced. The theoretical results are compared with those given by magnetic measurements.

  9. Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO{sub 2} layers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Haofeng; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, 14 Engineering Drive, Hanover, New Hampshire 03755 (United States)

    2016-03-07

    We demonstrate highly effective strain-induced band-engineering of (111) oriented direct-gap Ge{sub 1−x}Sn{sub x} thin films (0.074 < x < 0.085) crystallized on amorphous SiO{sub 2} towards 3D photonic integration. Due to a much smaller Poisson's ratio for (111) vs. (100) orientation, 0.44% thermally induced biaxial tensile strain reduces the direct-gap by 0.125 eV towards enhanced direct-gap semiconductor properties, twice as effective as the tensile strain in Ge(100) films. Correspondingly, the optical response is extended to λ = 2.8 μm. A dilatational deformation potential of a = −12.8 ± 0.8 eV is derived. These GeSn films also demonstrate high thermal stability, offering both excellent direct-gap optoelectronic properties and fabrication/operation robustness for integrated photonics.

  10. Highly ordered macroporous woody biochar with ultra-high carbon content as supercapacitor electrodes

    International Nuclear Information System (INIS)

    Jiang, Junhua; Zhang, Lei; Wang, Xinying; Holm, Nancy; Rajagopalan, Kishore; Chen, Fanglin; Ma, Shuguo

    2013-01-01

    Woody biochar monolith with ultra-high carbon content and highly ordered macropores has been prepared via one-pot pyrolysis and carbonization of red cedar wood at 750 °C without the need of post-treatment. Energy-dispersive spectroscope (EDX) and scanning electron microscope (SEM) studies show that the original biochar has a carbon content of 98 wt% with oxygen as the only detectable impurity and highly ordered macroporous texture characterized by alternating regular macroporous regions and narrow porous regions. Moreover, the hierarchically porous biochar monolith has a high BET specific surface area of approximately 400 m 2 g −1 . We have studied the monolith material as supercapacitor electrodes under acidic environment using electrochemical and surface characterization techniques. Electrochemical measurements show that the original biochar electrodes have a potential window of about 1.3 V and exhibit typical rectangular-shape voltammetric responses and fast charging–discharging behavior with a gravimetric capacitance of about 14 F g −1 . Simple activation of biochar in diluted nitric acid at room temperature leads to 7 times increase in the capacitance (115 F g −1 ). Because the HNO 3 -activation slightly decreases rather than increases the BET surface area of the biochar, an increase in the coverage of surface oxygen groups is the most likely origin of the substantial capacitance improvement. This is supported by EDX, X-ray photoelectron spectroscopy (XPS), and Raman measurements. Preliminary life-time studies show that biochar supercapacitors using the original and HNO 3 -activated electrodes are stable over 5000 cycles without performance decays. These facts indicate that the use of woody biochar is promising for its low cost and it can be a good performance electrode with low environmental impacts for supercapacitor applications

  11. Fully Biodegradable Biocomposites with High Chicken Feather Content

    OpenAIRE

    Aranberri, Ibon; Montes, Sarah; Azcune, Itxaso; Rekondo, Alaitz; Grande, Hans-Jürgen

    2017-01-01

    The aim of this work was to develop new biodegradable polymeric materials with high loadings of chicken feather (CF). In this study, the effect of CF concentration and the type of biodegradable matrix on the physical, mechanical and thermal properties of the biocomposites was investigated. The selected biopolymers were polylactic acid (PLA), polybutyrate adipate terephthalate (PBAT) and a PLA/thermoplastic copolyester blend. The studied biocomposites were manufactured with a to...

  12. Ordered Arrays of SiGe Islands from Low-Energy PECVD

    Directory of Open Access Journals (Sweden)

    Chrastina D

    2010-01-01

    Full Text Available Abstract SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantages of low-energy plasma-enhanced chemical vapor deposition (LEPECVD is a wider range of deposition rates, which in turn results in the possibility of growing islands with a high Ge concentration. We will show that LEPECVD can be effectively used for the controlled growth of ordered arrays of SiGe islands. In order to control the nucleation of the islands, patterned Si (001 substrates were obtained by e-beam lithography (EBL and dry etching. We realized periodic circular pits with diameters ranging from 80 to 300 nm and depths from 65 to 75 nm. Subsequently, thin films (0.8–3.2 nm of pure Ge were deposited by LEPECVD, resulting in regular and uniform arrays of Ge-rich islands. LEPECVD allowed the use of a wide range of growth rates (0.01–0.1 nm s−1 and substrates temperatures (600–750°C, so that the Ge content of the islands could be varied. Island morphology was characterized by AFM, while μ-Raman was used to analyze the Ge content inside the islands and the composition differences between islands on patterned and unpatterned areas of the substrate.

  13. Microstructure Characteristics of High Lift Factor MOCVD REBCO Coated Conductors With High Zr Content

    Energy Technology Data Exchange (ETDEWEB)

    Galstyan, E; Gharahcheshmeh, MH; Delgado, L; Xu, AX; Majkic, G; Selvamanickam, V

    2015-06-01

    We report the microstructural characteristics of high levels of Zr-added REBa2Cu3O7-x (RE = Gd, Y rare earth) coated conductors fabricated by Metal Organic Chemical Vapor Deposition (MOCVD). The enhancements of the lift factor defined as a ratio of the in-field (3 T, B parallel to c-axis) critical current density (J(c)) at 30 K and self-field J(c) at 77 K have been achieved for Zr addition levels of 20 and 25 mol% via optimization of deposition parameters. The presence of strong flux pinning is attributed to the aligned nanocolumns of BaZrO3 and nanoprecipitates embedded in REBa2Cu3O7-x matrix with good crystal quality. A high density of BZO nanorods with a typical size 6-8 nm and spacing of 20 nm has been observed. Moreover, the high Zr content was found to induce a high density of intrinsic defects, including stacking faults and dislocations. The correlation between in-field performance along the c-axis and microstructure of (Gd, Y) BCO film with a high level of Zr addition is discussed.

  14. Retrogradation of Maize Starch after High Hydrostatic Pressure Gelation: Effect of Amylose Content and Depressurization Rate

    KAUST Repository

    Yang, Zhi; Swedlund, Peter; Gu, Qinfen; Hemar, Yacine; Chaieb, Saharoui

    2016-01-01

    High hydrostatic pressure (HHP) has been employed to gelatinize or physically modify starch dispersions. In this study, waxy maize starch, normal maize starch, and two high amylose content starch were processed by a HHP of the order of 600 MPa

  15. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Bollani, M; Fedorov, A; Chrastina, D; Sordan, R; Picco, A; Bonera, E

    2010-01-01

    Si 1-x Ge x islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si 1-x Ge x islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s -1 ) and low temperature (650 deg. C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

  16. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

    Science.gov (United States)

    Bollani, M; Chrastina, D; Fedorov, A; Sordan, R; Picco, A; Bonera, E

    2010-11-26

    Si(1-x)Ge(x) islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si(1-x)Ge(x) islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s(-1)) and low temperature (650 °C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

  17. Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

    Science.gov (United States)

    Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

    2017-03-01

    In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

  18. Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.

    Science.gov (United States)

    Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

    2017-12-01

    In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N + pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g  = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

  19. High carotenoids content can enhance resistance of selected Pinctada fucata families to high temperature stress.

    Science.gov (United States)

    Meng, Zihao; Zhang, Bo; Liu, Baosuo; Li, Haimei; Fan, Sigang; Yu, Dahui

    2017-02-01

    Carotenoids are a class of natural antioxidants widely found in aquatic, and they have significant effects on the growth, survival, and immunity of these organisms. To investigate the mechanisms of carotenoids in high temperature resistance, we observed the immune response of selected pearl oyster Pinctada fucata (Akoya pearl oyster) families with different carotenoids contents to high temperature stress. The results indicated that the survival rate (SR) of P. fucata decreased significantly with increase in temperature from 26 °C to 34 °C and with the decrease of total carotenoids content (TCC); when the TCC was higher, the SR tended to be higher. TCC and total antioxidant capacity (TAC) decreased significantly at 30 °C with increasing stress time. Correlation analysis indicated that TAC was positively and linearly correlated with TCC, and SR was S-type correlated with TCC and TAC. Immune analysis indicated that levels of superoxide dismutase (SOD), catalase (CAT), and malondialdehyde (MDA) in selected families (with higher TCC) under temperature stress (at 30 °C) were generally significantly lower than in the control group (with lowest TCC) and from 0 to 96 h, the levels of each of these substances varied significantly. Levels of SOD, CAT, and MDA within each family first rose from 0 to 3 h, then decreased to their lowest point after 24 h, and then rose again to their highest levels at 96 h. When TCC was higher, the levels of SOD, CAT, and MDA tended to be lower. These findings indicated that carotenoids play an important role in improving survival rates of P. fucata under high temperature stress by enhancing animals' antioxidant system, and could serve as an index for breeding stress-resistant lines in selective breeding practices. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. Rapid recovery of high content phytosterols from corn silk.

    Science.gov (United States)

    Zhang, Haiyan; Cao, Xiaowan; Liu, Yong; Shang, Fude

    2017-10-18

    Phytosterols have important physiological and officinal function. An efficient ultrasonic assisted extraction, purification and crystallization procedure of phytosterols was established from corn silk for the first time. The orthogonal test was applied to optimize the process parameters and a maximum phytosterols recovery as high as 10.5886 mg/g was achieved by ultrasonic treatment for 55 min with liquid-solid ratio of 12:1 at 35 °C, 220 w. The ultrasonic extraction temperature (T, °C) has the most significant effect on extraction yield of phytosterols. An orthogonal crystallization test was performed and the optimal conditions [crystallization temperature of 8 °C, time of 12 h and solid-liquid ratio of 1:1 (g/ml)] afforded maximum phytosterols purity of 92.76 ± 0.43%. An efficient extraction and crystallization procedure was established.

  1. Can the water content of highly compacted bentonite be increased by applying a high water pressure?

    International Nuclear Information System (INIS)

    Pusch, R.; Kasbohm, J.

    2001-10-01

    A great many laboratory investigations have shown that the water uptake in highly compacted MX-80 clay takes place by diffusion at low external pressure. It means that wetting of the clay buffer in the deposition holes of a KBS-3 repository is very slow if the water pressure is low and that complete water saturation can take several tens of years if the initial degree of water saturation of the buffer clay and the ability of the rock to give off water are low. It has therefore been asked whether injection of water can raise the degree of water saturation and if a high water pressure in the nearfield can have the same effect. The present report describes attempts to moisten highly compacted blocks of MX-80 clay with a dry density of 1510 kg/m 3 by injecting water under a pressure of 650 kPa through a perforated injection pipe for 3 and 20 minutes, respectively. The interpretation was made by determining the water content of a number of samples located at different distances from the pipe. An attempt to interpret the pattern of distribution of injected uranium acetate solution showed that the channels into which the solution went became closed in a few minutes and that dispersion in the homogenized clay gave low U-concentrations. The result was that the water content increased from about 9 to about 11-12 % within a distance of about 1 centimeter from the injection pipe and to slightly more than 9 % at a distance of about 4-5 cm almost independently of the injection time. Complete water saturation corresponds to a water content of about 30 % and the wetting effect was hence small from a practical point of view. By use of microstructural models it can be shown that injected water enters only the widest channels that remain after the compaction and that these channels are quickly closed by expansion of the hydrating surrounding clay. Part of the particles that are thereby released become transported by the flowing water and cause clogging of the channels, which is

  2. OSMOSE experiment: high minor actinides contents pellets and pins fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Jankowiak, A.; Leorier, C.; Desmouliere, F.; Donnet, L. [Commissariat a l' Energie Atomique, CEA/DEN/VRH/DTEC/SDTC/LEMA, 30207 Bagnols-sur-Ceze cedex (France); Antony, M. [Commissariat a l' Energie Atomique, CEA/DEN/CAD/DER/SPEX/LPE, 13108 St Paul Lez Durance cedex (France); Bernard, D. [Commissariat a l' Energie Atomique, CEA/DEN/ CAD/DER /SPRC/LEPh, 13108 St Paul Lez Durance cedex (France)

    2008-07-01

    The OSMOSE program aims to provide accurate experimental data on integral neutron cross-sections of isotopes (i.e.: Th{sup 232}, U{sup 233}, U{sup 234}, U{sup 235}, U{sup 236}, U{sup 238}, Np{sup 237}, Pu{sup 238}, Pu{sup 239}, Pu{sup 240}, Pu{sup 241}, Pu{sup 242}, Am{sup 241}, Am{sup 243}, Cm{sup 244} and Cm{sup 245}). The study of these nuclides is performed on a large range of neutron spectra corresponding to specific experimental conditions (thermal, epithermal, moderated/fast, and fast spectra). This program will be used to provide guidance to all nuclear data programs in the world. This program has led to an optimized fabrication process for OSMOSE pellets and pins which were fabricated by the LEMA (Actinide based Materials Study Laboratory) in the ATALANTE facility both in glove box and shielded cell. The fabrication process made possible to obtain the required material characteristics including a high density, a good distribution of the isotopes in the uranium oxide matrices. A particular attention was paid to reduce chemical pollution of the samples. The program has been successfully achieved in July 2007 with the fabrication of the last two Cm doped samples. (authors)

  3. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    DEFF Research Database (Denmark)

    Vincent, B.; Gencarelli, F.; Bender, H.

    2011-01-01

    In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

  4. Evaluation of ultra-high-performance-fiber reinforced concrete binder content using the response surface method

    International Nuclear Information System (INIS)

    Aldahdooh, M.A.A.; Muhamad Bunnori, N.; Megat Johari, M.A.

    2013-01-01

    Highlights: • We develop a practical method for adjusting the binder content of UHP-FRC. • We adjust the binder content of UHP-FRC mixtures using RSM. • Increasing the cement content does not contribute to enhance strength. • Increasing the content of cement will increase the flow of UHP-FRC mixtures. - Abstract: One of the major disadvantages in ultra-high-performance-fiber reinforced concrete (UHP-FRC) is its high ordinary Portland cement (OPC) content, which directly translates into an increase in OPC production. More OPC production results in increased emission of greenhouse gases, as well increased electrical energy consumption and concrete price. This study is aimed at adjusting the binder content (OPC and silica fume (SF) contents) of UHP-FRC using the response surface method. The present investigation shows that, for a given water/binder and superplasticizer/OPC, the compressive strength is independent of the binder content, whereas the flow depends on the binder content. Increasing the binder content does not enhance the strength compared with the required design strength because the capillary porosity increases with increasing OPC content; however, the workability increases. The final result is the production of a UHP-FRC with an OPC content of 720.49 kg/m 3 , an SF content of 214.25 kg/m 3 , a compressive strength of 181.41 MPa, a direct tensile strength of 12.49 MPa, a bending tensile strength of 30.31 MPa, and a flow of 167 mm

  5. Advances in Predictive Toxicology for Discovery Safety through High Content Screening.

    Science.gov (United States)

    Persson, Mikael; Hornberg, Jorrit J

    2016-12-19

    High content screening enables parallel acquisition of multiple molecular and cellular readouts. In particular the predictive toxicology field has progressed from the advances in high content screening, as more refined end points that report on cellular health can be studied in combination, at the single cell level, and in relatively high throughput. Here, we discuss how high content screening has become an essential tool for Discovery Safety, the discipline that integrates safety and toxicology in the drug discovery process to identify and mitigate safety concerns with the aim to design drug candidates with a superior safety profile. In addition to customized mechanistic assays to evaluate target safety, routine screening assays can be applied to identify risk factors for frequently occurring organ toxicities. We discuss the current state of high content screening assays for hepatotoxicity, cardiotoxicity, neurotoxicity, nephrotoxicity, and genotoxicity, including recent developments and current advances.

  6. Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

    Science.gov (United States)

    Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

    2018-01-01

    Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

  7. Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

    Science.gov (United States)

    Vandersande, Jan W.; Wood, Charles; Draper, Susan

    1987-01-01

    Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

  8. Structural transformations in Ge{sub 2}Sb{sub 2}Te{sub 5} under high pressure and temperature

    Energy Technology Data Exchange (ETDEWEB)

    Mio, A. M.; Privitera, S., E-mail: stefania.privitera@imm.cnr.it; D' Arrigo, G.; Rimini, E. [IMM-CNR, Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche, Strada VIII 5, Zona Industriale, I-95121 Catania (Italy); Ceppatelli, M. [ICCOM-CNR, Istituto di Chimica dei Composti OrganoMetallici, Via Madonna del Piano 10, I-50019 Sesto Fiorentino (Italy); LENS, European Laboratory for Non-Linear Spectroscopy, Via Nello Carrara 1, I-50019 Sesto Fiorentino (Italy); Gorelli, F.; Santoro, M. [LENS, European Laboratory for Non-Linear Spectroscopy, Via Nello Carrara 1, I-50019 Sesto Fiorentino (Italy); INO-CNR, Istituto Nazionale di Ottica, Via Nello Carrara 1, I-50019 Sesto Fiorentino (Italy); Miritello, M. [MATIS-IMM-CNR, via S. Sofia 64, I-95123 Catania (Italy); Bini, R. [LENS, European Laboratory for Non-Linear Spectroscopy, Via Nello Carrara 1, I-50019 Sesto Fiorentino (Italy); Università degli Studi di Firenze, Via della Lastruccia 3, I-50019 Sesto Fiorentino (Italy)

    2015-08-14

    The structural transformations occurring in Ge{sub 2}Sb{sub 2}Te{sub 5} films heated at temperature up to 400 °C, and under hydrostatic pressure up to 12 GPa, have been investigated through in-situ X ray diffraction measurements. The adopted experimental conditions are close to those experienced by the phase change material during the SET (crystallization)/RESET (amorphization) processes in a nonvolatile memory device. The compression enhances the thermal stability of the amorphous phase, which remains stable up to 180 °C at 8 GPa and to 230 °C at 12 GPa. The structure of the crystalline phases is also modified, with the formation of a CsCl-type structure instead of rock-salt and of a GeS-type structure at the temperature at which usually the trigonal stable phase is formed. Overall, the stability of the stable phase appears to be more affected by the compression. We argue that the presence of weak bonds associated to the van der Waals gaps is a determining factor for the observed reduced stability.

  9. One-step Ge/Si epitaxial growth.

    Science.gov (United States)

    Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

    2011-07-01

    Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

  10. Measurement of the Nuclear Dependence of Direct Photon and Neutral Meson Production at High Transverse Momentum by Negative 515-GeV/c Pions Incident on Beryllium and Copper Targets

    Energy Technology Data Exchange (ETDEWEB)

    Sorrell, Lee Ronald [Michigan State Univ., East Lansing, MI (United States)

    1995-01-01

    The nuclear dependence of inclusive direct photon production and inclusive neutral meson production by a 515 GeV/c $\\pi^-$ beam has been measured using data collected by the E706 experiment during the 19.90 fixed, target run at the Fermi National Accelerator Laboratory. The experiment utilized a finely segmented liquid argon calorimeter and a high precision charged particle spectrometer to make precision measurements of inclusive direct photon, neutral pion, and $\\eta$ production in the rapidity interval from -0.75 < $y$ < 0.75. The $\\pi^0$ data is reported for the $P_T$ range from 0.6 GeV /c to 12 GeV /c, while the $\\eta$ data is reported for the range from 3.5 GeV /c to 7.0 GeV /c. The direct photon nuclear dependence results are reported for the range from approxlmately 4.0 GeV/c to 8.5 GeV/c. The data from the beryllium and copper targets have been fit using the parameterization $\\sigma_A$ = $\\sigma_0$ x $A^{\\alpha}$. The neutral meson results are in good agreement with previous charged meson results. The direct photon results are consistent with no anomalous enhancement.

  11. The influence of compound admixtures on the properties of high-content slag cement

    Energy Technology Data Exchange (ETDEWEB)

    Dongxu, L.; Xuequan, W.; Jinlin, S.; Yujiang, W.

    2000-01-01

    Based on the activation theory of alkali and sulfate, the influence of compound admixtures on the properties of high-content slag cement was studied by testing the strength, pore structure, hydrates, and microstructure, Test results show that compound admixtures can obviously improve the properties of high-content slag cement. The emphasis of the present research is two-fold: substituting gypsum with anhydrite and calcining gypsum. These both can improve early and later performance.

  12. The technology of uranium extraction from the brine with high chlorine-ion content

    International Nuclear Information System (INIS)

    Khakimov, N.; Nazarov, Kh.M.; Mirsaidov, I.U.; Negmatov, Sh.I.; Barotov, B.B.

    2010-01-01

    Present article is devoted to technology of uranium extraction from the brine with high chlorine-ion content. The research results on uranium extraction from the brine of Sasik-Kul Lake by means of sorption method were considered. The chemical composition of salt was determined. The process of uranium sorption was described and analyzed. The technology of uranium extraction from the brine with high chlorine-ion content was proposed.

  13. Photometric determination of niobium in materials with high content of phosphorus

    International Nuclear Information System (INIS)

    Navrotskaya, V.A.; Aleksandrova, E.I.; Kletenik, Yu.B.

    1982-01-01

    To determine niobium in various samples of niobium concentrates with a high phosphorus content, a photometric method with pyridylazoresorcinol (PAR) is used. It is shown that all the elements indicated (Fe, Si, Ti, Al, Ca) including phosphorus do not interfere with the niobium determination with the use of PAR. The method has been tried on artificial samples with different content of the base components. Variation coefficient constitutes 4.5%. No systematic errors, due to a high content of any concomitant element, are detected. The determination threshold is 10 - 2 %

  14. A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD

    Science.gov (United States)

    Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Schubert, Markus Andreas; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd

    2017-12-01

    Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness.

  15. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  16. Interactions of Particles with Momenta of 1–10 GeV in a Highly Granular Hadronic Calorimeter with Tungsten Absorbers

    CERN Document Server

    Lam, Ching Bon; van Eijk, Bob

    Linear electron-positron colliders are proposed to complement and extend the physics programme of the Large Hadron Collider at CERN. In order to satisfy the physics goal requirements at linear colliders, detector concepts based on the Particle Flow approach are developed. Central to this approach are a high resolution tracker and a highly granular calorimeter which provide excellent jet energy resolution and background separation. The Compact Linear Collider (CLIC) is an electron-positron collider under study, aiming at centre-of-mass energies up to 3TeV. For the barrel hadronic calorimeter of experiments at CLIC, a detector with tungsten absorber plates is considered, as it is able to contain shower jets while keeping the diameter of the surrounding solenoid magnet limited. A highly granular analogue hadron calorimeter with tungsten absorbers was built by the CALICE collaboration. This thesis presents the analysis of the low-momentum data (1 GeV $\\leq$ p $\\leq$ 10 GeV) recorded in 2010 at the CERN Proton Syn...

  17. High-pressure effect in spectroscopic and structural properties of Sm{sup 3+} doped GeO{sub 2}-PbO glass

    Energy Technology Data Exchange (ETDEWEB)

    Rovani, Pablo Roberto; Herrera, Alvaro; Azevedo, Gustavo de Medeiros; Balzaretti, Naira Maria, E-mail: rovani.pr@gmail.com [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre (Brazil)

    2016-07-01

    Full text: The effect of densification under high pressure (7.7 GPa) on spectroscopic and structural properties of Ge{sub 2}O-PbO glass doped with Sm{sup 3+} ion were investigated. Raman spectroscopy and Extended X-ray Absorption Fine Structure (EXAFS) were used to investigate the effect of high pressure on the structural properties. The spectroscopic properties were investigated through the absorption and luminescence spectra recorded at room temperature The splitting in the VIS-NIR fluorescence bands increased after densification. Judd-Ofelt (J-O) theory was applied to evaluate phenomenological JO intensity parameters Ω (λ = 2, 4 and 6). The effect of high pressure on the transition probabilities (A{sub R}), radiative lifetimes (t{sub R}), branching ratio (b{sub R}) and stimulated emission cross-section s(l{sub p}) was also investigated. The results obtained from EXAFS indicated changes around the vicinity of Sm{sup 3+} ion which would explain the quenching in emission intensities in the visible range. A novel band related to the transition {sup 4}G{sub 5/2} to {sup 6}F{sub 11/2} was observed in the Sm{sup 3+} doped GeO{sub 2}-PbO. The obtained results may be useful for compact light sources, optical devices in the visible region and optoelectronic devices. (author)

  18. High oleic acid content materials of rapeseed (Brassica napus) produced by radiation breeding

    International Nuclear Information System (INIS)

    Guan Chunyun; Liu Chunlin; Chen Sheyuan

    2006-01-01

    High oleic acid content rapeseed breeding has great significance, because high oleic acid oil is a healthy and nutritious oil, which is of a long shelflife and also propitious to producing biodiesel fuel. The high oleic acid content breeding materials of rapeseed (B. napus) were obtained by 80-100 kR ~(60)Co gamma ray ionizing radiation treatment of dry seeds and continuous selection. The results showed that the oleic acid contents of M (2), M (3) and M (4) progenies increased by different grades. Moreover, the oleic acid content of M (5) progeny increased greatly. The oleic acid contents were higher than 70% in the most of the plants and the highest one reached 93.5 %. The base G was transited by base A in fad (2) gene at the 270 site of high oleic acid mutation (M(6) 04-855). The location is at the beta folding area and conservative area of this protein. Base mutation at sites 1 044 and 1 062 also led to produce a stop condon. These changes in structure led to loss the function of fad (2). According to molecular mechanism of gene mutation, no matter what transvertion or transition happens, several replications are needed. That is to say several generations are needed. That was also the reason why high oleic acid content mutation occurred in later generations

  19. Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

    International Nuclear Information System (INIS)

    Jiang, Z.X.; Kim, K.; Lerma, J.; Corbett, A.; Sieloff, D.; Kottke, M.; Gregory, R.; Schauer, S.

    2006-01-01

    This work explored quantitative analyses of SiGe films on either Si bulk or SOI wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si + and Ge + inside SiGe films. SiGe samples with Ge contents ranging from 15 to 65% have been analyzed with a 1 keV O 2 + beam at normal incidence. For comparison, the samples were also analyzed with RBS and/or AES. The Ge content as measured with SIMS, based on a single SiGe/Si or SiGe/SOI standard, exhibited good agreement with the corresponding RBS and AES data. It was concluded that SIMS was capable of providing accurate characterization of the SiGe composition with the Ge content up to 65%

  20. Kirkendall void formation in reverse step graded Si1-xGex/Ge/Si(001) virtual substrates

    Science.gov (United States)

    Sivadasan, Vineet; Rhead, Stephen; Leadley, David; Myronov, Maksym

    2018-02-01

    Formation of Kirkendall voids is demonstrated in the Ge underlayer of reverse step graded Si1-xGex/Ge buffer layers grown on Si(001) using reduced pressure chemical vapour deposition (RP-CVD). This phenomenon is seen when the constant composition Si1-xGex layer is grown at high temperatures and for x ≤ 0.7. The density and size of the spherical voids can be tuned by changing Ge content in the Si1-xGex and other growth parameters.

  1. Ion-beam synthesis of Ge{sub x}Si{sub 1-x} strained layers for high speed electronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Elliman, R.G.; Jiang, H.; Wong, W.C.; Kringhoj, P. [Australian National Univ., Canberra, ACT (Australia)

    1996-12-31

    It is shown that Ge{sub x}S{sub 1-x} strained layers can be fabricated by Ge implantation and solid-phase epitaxy and that the use of these layers can improve the performance of electronic devices. Several materials science issues are addressed, including the effect of Ge on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The process is demonstrated for metal-oxide-semiconductor field-effect-transistors (MOSFETs). 6 refs., 5 figs.

  2. Ion-beam synthesis of Ge{sub x}Si{sub 1-x} strained layers for high speed electronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Elliman, R G; Jiang, H; Wong, W C; Kringhoj, P [Australian National Univ., Canberra, ACT (Australia)

    1997-12-31

    It is shown that Ge{sub x}S{sub 1-x} strained layers can be fabricated by Ge implantation and solid-phase epitaxy and that the use of these layers can improve the performance of electronic devices. Several materials science issues are addressed, including the effect of Ge on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The process is demonstrated for metal-oxide-semiconductor field-effect-transistors (MOSFETs). 6 refs., 5 figs.

  3. Effect of PVA fiber content on creep property of fiber reinforced high-strength concrete columns

    Science.gov (United States)

    Xu, Zongnan; Wang, Tao; Wang, Weilun

    2018-04-01

    The effect of PVA (polyvinyl alcohol) fiber content on the creep property of fiber reinforced high-strength concrete columns was investigated. The correction factor of PVA fiber content was proposed and the creep prediction model of ACI209 was modified. Controlling the concrete strength as C80, changing the content of PVA fiber (volume fraction 0%, 0.25%, 0.5%, 1% respectively), the creep experiment of PVA fiber reinforced concrete columns was carried out, the creep coefficient of each specimen was calculated to characterize the creep property. The influence of PVA fiber content on the creep property was analyzed based on the creep coefficient and the calculation results of several frequently used creep prediction models. The correction factor of PVA fiber content was proposed to modify the ACI209 creep prediction model.

  4. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Science.gov (United States)

    Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2018-01-01

    High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.

  5. Reducing the cost of semi-automated in-gel tryptic digestion and GeLC sample preparation for high-throughput proteomics.

    Science.gov (United States)

    Ruelcke, Jayde E; Loo, Dorothy; Hill, Michelle M

    2016-10-21

    Peptide generation by trypsin digestion is typically the first step in mass spectrometry-based proteomics experiments, including 'bottom-up' discovery and targeted proteomics using multiple reaction monitoring. Manual tryptic digest and the subsequent clean-up steps can add variability even before the sample reaches the analytical platform. While specialized filter plates and tips have been designed for automated sample processing, the specialty reagents required may not be accessible or feasible due to their high cost. Here, we report a lower-cost semi-automated protocol for in-gel digestion and GeLC using standard 96-well microplates. Further cost savings were realized by re-using reagent tips with optimized sample ordering. To evaluate the methodology, we compared a simple mixture of 7 proteins and a complex cell-lysate sample. The results across three replicates showed that our semi-automated protocol had performance equal to or better than a manual in-gel digestion with respect to replicate variability and level of contamination. In this paper, we also provide the Agilent Bravo method file, which can be adapted to other liquid handlers. The simplicity, reproducibility, and cost-effectiveness of our semi-automated protocol make it ideal for routine in-gel and GeLC sample preparations, as well as high throughput processing of large clinical sample cohorts. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. Structural characterization of the high-temperature modification of the Cu{sub 2}ZnGeTe{sub 4} quaternary semiconductor compound

    Energy Technology Data Exchange (ETDEWEB)

    Nieves, L.; Marcano, G.; Power, C.; Rincon, C. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of); Delgado, G.E. [Laboratorio de Cristalografia, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of); Lopez-Rivera, S.A. [Grupo de Fisica Aplicada, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, 5101 (Venezuela, Bolivarian Republic of)

    2016-06-15

    A combined study of the X-ray powder diffraction, differential thermal analysis, optical absorption, and Raman spectroscopy of the high-temperature modification of Cu{sub 2}ZnGeTe{sub 4} quaternary semiconductor, obtained by fast quenching from 820 K to ice water temperature, has been done. It has been found that this phase crystallizes in a tetragonal kesterite-type structure. From the analysis of the absorption coefficient spectra, the band gap energy of this material at room temperature has been found to be 1.49 eV. An optical transition from defect acceptor states to the conduction band is also observed below the fundamental absorption edge. Three strongest Raman lines observed at 116, 119, and 139 cm{sup -1} have been assigned to the A-symmetry modes. Also, lines at 81, 89, 97, and 263 cm{sup -1} tentatively ascribed as B or E-symmetry modes have been detected from the spectrum. The presence in this high-temperature modification of ZnTe and Cu{sub 2}GeTe{sub 3} secondary phases has been detected by both XRD and Raman spectroscopy. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Monte-Carlo calculation of irradiation dose content beyond shielding of high-energy accelerators

    International Nuclear Information System (INIS)

    Mokhov, N.V.; Frolov, V.V.

    1975-01-01

    The MARS programme, designed for calculating the three-dimensional internuclear cascade in defence of the accelerators by the Monte Carlo method, is described. The methods used to reduce the dispersion and the system of semi-empirical formulas made it possible to exceed the parameters of the existing programmes. By means of a synthesis of the results, registered by MARS and HAMLET programmes, the dosage fields for homogeneous and heterogeneous defence were evaluated. The results of the calculated absorbed and equivalent dose behind the barrier, irradiated by a proton beam, having the energy of Esub(o)=1/1000 GeV are exposed. The dependence of the high- and low-energy neutron, proton, pion, kaon, muonium and γ-quantum dosage on the initial energy and thickness, on the material and the composition of the defence is investigated

  8. High-Pressure Synthesis, Structure, and Magnetic Properties of Ge-Substituted Filled Skutterudite Compounds; LnxCo4Sb12−yGey, Ln = La, Ce, Pr, and Nd

    Directory of Open Access Journals (Sweden)

    Hiroshi Fukuoka

    2017-12-01

    Full Text Available A series of new Ge-substituted skutterudite compounds with the general composition of LnxCo4Sb12−yGey, where Ln = La, Ce, Pr, and Nd, is prepared by high-pressure and high-temperature reactions at 7 GPa and 800 °C. They have a cubic unit cell and the lattice constant for each compound is 8.9504 (3, 8.94481 (6, 8.9458 (3, and 8.9509 (4 Å for the La, Ce, Pr, and Nd derivatives, respectively. Their chemical compositions, determined by electron prove microanalysis, are La0.57Co4Sb10.1Ge2.38, Ce0.99Co4Sb9.65Ge2.51, Pr0.97Co4Sb9.52Ge2.61, and Nd0.87Co4Sb9.94Ge2.28. Their structural parameters are refined by Rietveld analysis. The guest atom size does not affect the unit cell volume. The Co–Sb/Ge distance mainly determines the unit cell size as well as the size of guest atom site. The valence state of lanthanide ions is 3+.

  9. Modeled effects on permittivity measurements of water content in high surface area porous media

    International Nuclear Information System (INIS)

    Jones, S.B.; Or, Dani

    2003-01-01

    Time domain reflectometry (TDR) has become an important measurement technique for determination of porous media water content and electrical conductivity due to its accuracy, fast response and automation capability. Water content is inferred from the measured bulk dielectric constant based on travel time analysis along simple transmission lines. TDR measurements in low surface area porous media accurately describe water content using an empirical relationship. Measurement discrepancies arise from dominating influences such as bound water due to high surface area, extreme aspect ratio particles or atypical water phase configuration. Our objectives were to highlight primary factors affecting dielectric permittivity measurements for water content determination in porous mixtures, and demonstrate the influence of these factors on mixture permittivity as predicted by a three-phase dielectric mixture model. Modeled results considering water binding, higher porosity, constituent geometry or phase configuration suggest any of these effects individually are capable of causing permittivity reduction, though all likely contribute in high surface area porous media

  10. Kinethical Aspects of High Solid Contents Copoly(Styrene/Butylacrylate-Cloisite 30B Nanocomposites

    Directory of Open Access Journals (Sweden)

    M. Mirzataheri

    2014-01-01

    Full Text Available High solid content poly (styrene-co-butyl acrylate latex ( with 20% and 40% solid content including high amounts of Cloisite 30B (7 wt% and 10 wt% were kinetically investigated. Gravimetric method via measuring the rate of polymerization, number of particles and average number of radicals per particle was used. Results showed that by increasing the solid content; the average diameter of polymer particles decreased. Studies on the polymerization rate depict that the increase in polymer particle size provides more average reactive radicals per polymer particle, which increased from 0.48 to 0.88 for the sample containing 7 wt% clay and 20 wt% solid content. Observed armored particles with honeycomb morphology is the most novelty of this research work, which is suitable for making barrier packaging films.

  11. Seismic Performance Comparison of a High-Content SDA Frame and Standard RC Frame

    OpenAIRE

    van de Lindt, John W.; Rechan, R. Karthik

    2011-01-01

    This study presents the method and results of an experiment to study the seismic behavior of a concrete portal frame with fifty percent of its cement content replaced with a spray dryer ash (SDA). Based on multiple-shake-table tests, the high content SDA frame was found to perform as well as the standard concrete frame for two earthquakes exceeding design-level intensity earthquakes. Hence, from a purely seismic/structural standpoint, it may be possible to replace approximately fifty percen...

  12. Innovation management and marketing in the high-tech sector: A content analysis of advertisements

    DEFF Research Database (Denmark)

    Gerhard, D.; Brem, Alexander; Baccarella, Ch.

    2011-01-01

    Advertizing high-technology products is a tricky and critical task for every company, since it means operating in an environment with high market uncertainty. The work presents results of a content analysis of 110 adverts for consumer electronics products which examines how these products and the...

  13. Enzymatic pre-treatment of high content cellulosic feedstock improves biogas production

    Science.gov (United States)

    Animal wastes with high lignin and cellulosic contents can serve as the feedstock for biogas production (mainly methane) that could be used as alternative energy source. However, these high lignin and cellulosic feedstocks are quite recalcitrant to be readily utilized by methanogens to produce ben...

  14. A GEM Detector System for an Upgrade of the High-eta Muon Endcap Stations GE1/1 + ME1/1 in CMS

    CERN Document Server

    Abbaneo, D; Aspell, P.; Bianco, S.; Hoepfner, K.; Hohlmann, M.; Maggi, M.; De Lentdecker, G.; Safonov, A.; Sharma, A.; Tytgat, M.

    2012-01-01

    Based on the CMS Upgrade R&D Proposal RD10.02, we describe the motivation and main features of the CMS GEM Project for LS2 and propose the addition of a full GE1/12 detector station comprising Gas Electron Multiplier (GEM) chambers to the forward muon system of CMS. The limitations of the currently existing forward muon detector when operating at increasingly high luminosity expected after LS1 are laid out followed by a brief description of the anticipated performance improvements achievable with a GE1/1 station. The second part describes the detector system followed by an overview of electronics and associated services including a discussion of the schedule and cost of the project. Plans for a precursor demonstrator installation in LS1 are presented. This proposal is intended as a concise follow-up of the detailed document CMS-IN-2012-023. If approved, this is to be followed by a detailed Technical Design Report.

  15. Structure Interlacing and Pore Engineering of Zn2GeO4 Nanofibers for Achieving High Capacity and Rate Capability as an Anode Material of Lithium Ion Batteries.

    Science.gov (United States)

    Wang, Wei; Qin, Jinwen; Cao, Minhua

    2016-01-20

    An interlaced Zn2GeO4 nanofiber network with continuous and interpenetrated mesoporous structure was prepared using a facile electrospinning method followed by a thermal treatment. The mesoporous structure in Zn2GeO4 nanofibers is directly in situ constructed by the decomposition of polyvinylpyrolidone (PVP), while the interlaced nanofiber network is achieved by the mutual fusion of the junctions between nanofibers in higher calcination temperatures. When used as an anode material in lithium ion batteries (LIBs), it exhibits superior lithium storage performance in terms of specific capacity, cycling stability, and rate capability. The pore engineering and the interlaced network structure are believed to be responsible for the excellent lithium storage performance. The pore structure allows for easy diffusion of electrolyte, shortens the pathway of Li(+) transport, and alleviates large volume variation during repeated Li(+) extraction/insertion. Moreover, the interlaced network structure can provide continuous electron/ion pathways and effectively accommodate the strain induced by the volume change during the electrochemical reaction, thus maintaining structural stability and mechanical integrity of electrode materials during lithiation/delithiation process. This strategy in current work offers a new perspective in designing high-performance electrodes for LIBs.

  16. Measurement of the Cross Section for High-$p_T$ Hadron Production in Scattering of 160 GeV/c Muons off Nucleons

    CERN Document Server

    Adolph, C; Alexakhin, V Yu; Alexandrov, Yu; Alexeev, G D; Amoroso, A; Antonov, A A; Austregesilo, A; Badelek, B; Balestra, F; Barth, J; Baum, G; Bedfer, Y; Bernhard, J; Bertini, R; Bettinelli, M; Bicker, K; Bieling, J; Birsa, R; Bisplinghoff, J; Bordalo, P; Bradamante, F; Braun, C; Bravar, A; Bressan, A; Burtin, E; Chiosso, M; Chung, S U; Cicuttin, A; Crespo, M L; Dalla Torre, S; Das, S; Dasgupta, S S; Dasgupta, S; Denisov, O Yu; Dhara, L; Donskov, S V; Doshita, N; Duic, V; Dünnweber, W; Dziewiecki, M; Efremov, A; Elia, C; Eversheim, P D; Eyrich, W; Faessler, M; Ferrero, A; Filin, A; Finger, M; Finger, M; Fischer, H; Franco, C; du Fresne von Hoheneschedu, N; Friedrich, J M; Frolov, V; Garfagnini, R; Gautheron, F; Gavrichtchouk, O P; Gerassimov, S; Geyer, R; Giorgi, M; Gnesi, I; Gobbo, B; Goertz, S; Grabmüller, S; Grasso, A; Grube, B; Gushterski, R; Guskov, A; Guthörl, T; Haas, F; von Harrach, D; Heinsius, F H; Herrmann, F; Hess, C; Hinterberger, F; Horikawa, N; Höppner, Ch; d'Hose, N; Ishimoto, S; Ivanov, O; Ivanshin, Yu; Iwata, T; Jahn, R; Jary, V; Jasinski, P; Joosten, R; Kabuss, E; Kang, D; Ketzer, B; Khaustov, G V; Khokhlov, Yu A; Kisselev, Yu; Klein, F; Klimaszewski, K; Koblitz, S; Koivuniemi, J H; Kolosov, V N; Kondo, K; Königsmann, K; Konorov, I; Konstantinov, V F; Korzenev, A; Kotzinian, A M; Kouznetsov, O; Krämer, M; Kroumchtein, Z V; Kuhn, R; Kunne, F; Kurek, K; Lauser, L; Lednev, A A; Lehmann, A; Levorato, S; Lichtenstadt, J; Liska, T; Maggiora, A; Magnon, A; Makke, N; Mallot, G K; Mann, A; Marchand, C; Martin, A; Marzec, J; Matsuda, T; Meshcheryakov, G; Meyer, W; Michigami, T; Mikhailov, Yu V; Moinester, M A; Morreale, A; Mutter, A; Nagaytsev, A; Nagel, T; Negrini, T; Nerling, F; Neubert, S; Neyret, D; Nikolaenko, V I; Nowak, W -D; Nunes, A S; Olshevsky, A G; Ostrick, M; Padee, A; Panknin, R; Panzieri, D; Parsamyan, B; Paul, S; Perevalova, E; Pesaro, G; Peshekhonov, D V; Piragino, G; Platchkov, S; Pochodzalla, J; Polak, J; Polyakov, V A; Pretz, J; Quaresma, M; Quintans, C; Rajotte, J -F; Ramos, S; Rapatsky, V; Reicherz, G; Richter, A; Rocco, E; Rondio, E; Rossiyskaya, N S; Ryabchikov, D I; Samoylenko, V D; Sandacz, A; Sapozhnikov, M G; Sarkar, S; Savin, I A; Sbrizzai, G; Schiavon, P; Schill, C; Schlüter, T; Schmidt, K; Schmitt, L; Schönning, K; Schopferer, S; Schott, M; Schröder, W; Shevchenko, O Yu; Silva, L; Sinha, L; Sissakian, A N; Slunecka, M; Smirnov, G I; Sosio, S; Sozzi, F; Srnka, A; Steiger, L; Stolarski, M; Sulc, M; Sulej, R; Sznajder, P; Takekawa, S; Ter Wolbeek, J; Tessaro, S; Tessarotto, F; Tkatchev, L G; Uhl, S; Uman, I; Vandenbroucke, M; Virius, M; Vlassov, N V; Wang, L; Windmolders, R; Wislicki, W; Wollny, H; Zaremba, K; Zavertyaev, M; Zemlyanichkina, E; Ziembicki, M; Zhuravlev, N; Zvyagin, A

    2013-01-01

    The cross section for production of charged hadrons with high transverse momenta in scattering of 160 GeV/c muons off nucleons at low photon virtualities has been measured at the COMPASS experiment at CERN. The results, which cover transverse momenta from 1.1 to 3.6 GeV/c, are compared to a next-to-leading order perturbative Quantum Chromodynamics (NLO pQCD) calculation in order to evaluate the applicability of pQCD to this process in the kinematic domain of the experiment. The shape of the calculated differential cross section as a function of transverse momentum is found to be in good agreement with the experimental data, but the normalization is underestimated by NLO pQCD. This discrepancy may point towards the relevance of terms beyond NLO in the pQCD framework. The dependence of the cross section on the pseudo-rapidity and on the charge of the hadrons is also discussed.

  17. Omega Meson Production at High Transverse momentum by negative 515-GeV/c pions incident on beryllium and copper targets

    Energy Technology Data Exchange (ETDEWEB)

    de Barbaro, Lucyna [Rochester U.

    1995-01-01

    The inclusive cross section for !(783) meson production by 515 GeV/c $\\pi^{-}$ beam incident on Be and Cu targets has been measured as a function of transverse momentum (pT ). The data were collected during the 1990 run of experiment E706 at Fermilab. The E706 trigger selected events containing high pT electromagnetic showers detected in a nely segmented lead liquid argon calorimeter. The ! mesons were reconstructed in the neutral decay mode $\\omega \\to \\pi^{0}\\gamma$. Results are reported averaged over the center of mass rapidity interval -0.5 < y < 0.75, and in the transverse momentum range from 3.5 to 8 GeV/c. The $\\gamma$ to $\\pi^0$ production ratio was measured and used to obtain the ratio of vector to pseudoscalar mesons directly produced in the fragmentation process. Measurements are compared with HERWIG 5.7 Monte Carlo results, and with data from other experiments. The nuclear dependence of ! meson production is also discussed

  18. Two-dimensional n -InSe/p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

    Science.gov (United States)

    Xia, Cong-xin; Du, Juan; Huang, Xiao-wei; Xiao, Wen-bo; Xiong, Wen-qi; Wang, Tian-xing; Wei, Zhong-ming; Jia, Yu; Shi, Jun-jie; Li, Jing-bo

    2018-03-01

    Recently, constructing van der Waals (vdW) heterojunctions by stacking different two-dimensional (2D) materials has been considered to be effective strategy to obtain the desired properties. Here, through first-principles calculations, we find theoretically that the 2D n -InSe/p -GeSe(SnS) vdW heterojunctions are the direct-band-gap semiconductor with typical type-II band alignment, facilitating the effective separation of photogenerated electron and hole pairs. Moreover, they possess the high optical absorption strength (˜105 ), broad spectrum width, and excellent carrier mobility (˜103c m2V-1s-1 ). Interestingly, under the influences of the interlayer coupling and external electric field, the characteristics of type-II band alignment is robust, while the band-gap values and band offset are tunable. These results indicate that 2D n -InSe/p -GeSe(SnS) heterojunctions possess excellent optoelectronic and transport properties, and thus can become good candidates for next-generation optoelectronic nanodevices.

  19. Preparation, tunneling, resistivity, and critical current measurements on homogeneous high-T/sub c/ A15 Nb3Ge thin films

    International Nuclear Information System (INIS)

    Kihlstrom, K.E.; Hammond, R.H.; Talvacchio, J.; Geballe, T.H.; Green, A.K.; Rehn, V.

    1982-01-01

    We have prepared homogeneous films of high T/sub c/ Nb 3 Ge as demonstrated by a total transition width of less than 1 K with a resistive T/sub c/ onset of 21.7 K, by paying particular attention to the constancy of substrate temperature. X-ray diffraction analysis done both at Stanford and at Westinghouse shows no evidence of a second phase to the limits of the instruments ( 6 A/cm 2 , which are the highest ever reported for any material at this temperature. In an applied magnetic field of 7.5 tesla, J/sub c/ was 2.5 x 10 6 A/cm 2 at 4.2 K. Tunneling as a function of thickness into Nb 3 Ge where the oxygen had been removed from the system after 1300 A had been deposited but the deposition continued up to 1 μm showed only limited degradation (in terms of gap width, excess conductance below the gap as well as magnitude of gap). This gives some indication that oxygen may only be needed initially during the deposition rather than throughout the entire deposition. T/sub c/ correlates well with composition, as does resistivity, thus we see the correlation between increasing T/sub c/ and decreasing resistivity

  20. High Transverse Momentum Triggered Correlations over a Large Pseudorapidity Acceptance in Au+Au Collisions at sNN=200GeV

    Science.gov (United States)

    Alver, B.; Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Chai, Z.; Chetluru, V.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Halliwell, C.; Hamblen, J.; Hauer, M.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Li, W.; Lin, W. T.; Loizides, C.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Seals, H.; Sedykh, I.; Smith, C. E.; Stankiewicz, M. A.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Vaurynovich, S. S.; Verdier, R.; Veres, G. I.; Walters, P.; Wenger, E.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wysłouch, B.

    2010-02-01

    A measurement of two-particle correlations with a high transverse momentum trigger particle (pTtrig>2.5GeV/c) is presented for Au+Au collisions at sNN=200GeV over the uniquely broad longitudinal acceptance of the PHOBOS detector (-4<Δη<2). A broadening of the away-side azimuthal correlation compared to elementary collisions is observed at all Δη. As in p+p collisions, the near side is characterized by a peak of correlated partners at small angle relative to the trigger particle. However, in central Au+Au collisions an additional correlation extended in Δη and known as the “ridge” is found to reach at least |Δη|≈4. The ridge yield is largely independent of Δη over the measured range, and it decreases towards more peripheral collisions. For the chosen pTtrig cut, the ridge yield is consistent with zero for events with less than roughly 100 participating nucleons.

  1. Austenitic stainless steel alloys with high nickel contents in high temperature liquid metal systems

    International Nuclear Information System (INIS)

    Konvicka, H.R.; Schwarz, N.F.

    1981-01-01

    Fe-Cr-Ni base alloys (nickel content: from 15 to 70 wt%, Chromium content: 15 wt%, iron: balance) together with stainless steel (W.Nr. 1.4981) have been exposed to flowing liquid sodium at 730 0 C in four intervals up to a cumulative exposure time of 1500 hours. Weight change data and the results of post-exposition microcharacterization of specimens are reported. The corrosion rates increase with increasing nickel content and tend to become constant after longer exposure times for each alloy. The corrosion rate of stainless steel is considerably reduced due to the presence of the base alloys. Different kinetics of nickel poor (up to 35% nickel) and nickel rich (> 50% nickel) alloys and nickel transport from nickel rich to nickel poor material is observed. (orig.)

  2. Growth and characterization of isotopically enriched 70Ge and 74Ge single crystals

    International Nuclear Information System (INIS)

    Itoh, K.

    1992-10-01

    Isotopically enriched 70 Ge and 74 Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm 3 volume. To our knowledge, we have grown the first 70 Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be ∼2 x cm -3 which is two order of magnitude better that of 74 Ge crystals previously grown by two different groups. Isotopic enrichment of the 70 Ge and the 74 Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed

  3. Measurement of long-range angular correlations and azimuthal anisotropies in high-multiplicity p +Au collisions at √{sNN}=200 GeV

    Science.gov (United States)

    Aidala, C.; Akiba, Y.; Alfred, M.; Andrieux, V.; Aoki, K.; Apadula, N.; Asano, H.; Ayuso, C.; Azmoun, B.; Babintsev, V.; Bandara, N. S.; Barish, K. N.; Bathe, S.; Bazilevsky, A.; Beaumier, M.; Belmont, R.; Berdnikov, A.; Berdnikov, Y.; Blau, D. S.; Boer, M.; Bok, J. S.; Brooks, M. L.; Bryslawskyj, J.; Bumazhnov, V.; Butler, C.; Campbell, S.; Canoa Roman, V.; Cervantes, R.; Chi, C. Y.; Chiu, M.; Choi, I. J.; Choi, J. B.; Citron, Z.; Connors, M.; Cronin, N.; Csanád, M.; Csörgő, T.; Danley, T. W.; Daugherity, M. S.; David, G.; Deblasio, K.; Dehmelt, K.; Denisov, A.; Deshpande, A.; Desmond, E. J.; Dion, A.; Dixit, D.; Do, J. H.; Drees, A.; Drees, K. A.; Dumancic, M.; Durham, J. M.; Durum, A.; Elder, T.; Enokizono, A.; En'yo, H.; Esumi, S.; Fadem, B.; Fan, W.; Feege, N.; Fields, D. E.; Finger, M.; Finger, M.; Fokin, S. L.; Frantz, J. E.; Franz, A.; Frawley, A. D.; Fukuda, Y.; Gal, C.; Gallus, P.; Garg, P.; Ge, H.; Giordano, F.; Goto, Y.; Grau, N.; Greene, S. V.; Grosse Perdekamp, M.; Gunji, T.; Guragain, H.; Hachiya, T.; Haggerty, J. S.; Hahn, K. I.; Hamagaki, H.; Hamilton, H. F.; Han, S. Y.; Hanks, J.; Hasegawa, S.; Haseler, T. O. S.; He, X.; Hemmick, T. K.; Hill, J. C.; Hill, K.; Hollis, R. S.; Homma, K.; Hong, B.; Hoshino, T.; Hotvedt, N.; Huang, J.; Huang, S.; Imai, K.; Imrek, J.; Inaba, M.; Iordanova, A.; Isenhower, D.; Ito, Y.; Ivanishchev, D.; Jacak, B. V.; Jezghani, M.; Ji, Z.; Jiang, X.; Johnson, B. M.; Jorjadze, V.; Jouan, D.; Jumper, D. S.; Kang, J. H.; Kapukchyan, D.; Karthas, S.; Kawall, D.; Kazantsev, A. V.; Khachatryan, V.; Khanzadeev, A.; Kim, C.; Kim, D. J.; Kim, E.-J.; Kim, M. H.; Kim, M.; Kincses, D.; Kistenev, E.; Klatsky, J.; Kline, P.; Koblesky, T.; Kotov, D.; Kudo, S.; Kurita, K.; Kwon, Y.; Lajoie, J. G.; Lallow, E. O.; Lebedev, A.; Lee, S.; Leitch, M. J.; Leung, Y. H.; Lewis, N. A.; Li, X.; Lim, S. H.; Liu, L. D.; Liu, M. X.; Loggins, V.-R.; Loggins, V.-R.; Lovasz, K.; Lynch, D.; Majoros, T.; Makdisi, Y. I.; Makek, M.; Malaev, M.; Manko, V. I.; Mannel, E.; Masuda, H.; McCumber, M.; McGaughey, P. L.; McGlinchey, D.; McKinney, C.; Mendoza, M.; Mignerey, A. C.; Mihalik, D. E.; Milov, A.; Mishra, D. K.; Mitchell, J. T.; Mitsuka, G.; Miyasaka, S.; Mizuno, S.; Montuenga, P.; Moon, T.; Morrison, D. P.; Morrow, S. I. M.; Murakami, T.; Murata, J.; Nagai, K.; Nagashima, K.; Nagashima, T.; Nagle, J. L.; Nagy, M. I.; Nakagawa, I.; Nakagomi, H.; Nakano, K.; Nattrass, C.; Niida, T.; Nouicer, R.; Novák, T.; Novitzky, N.; Novotny, R.; Nyanin, A. S.; O'Brien, E.; Ogilvie, C. A.; Orjuela Koop, J. D.; Osborn, J. D.; Oskarsson, A.; Ottino, G. J.; Ozawa, K.; Pantuev, V.; Papavassiliou, V.; Park, J. S.; Park, S.; Pate, S. F.; Patel, M.; Peng, W.; Perepelitsa, D. V.; Perera, G. D. N.; Peressounko, D. Yu.; Perezlara, C. E.; Perry, J.; Petti, R.; Phipps, M.; Pinkenburg, C.; Pisani, R. P.; Pun, A.; Purschke, M. L.; Read, K. F.; Reynolds, D.; Riabov, V.; Riabov, Y.; Richford, D.; Rinn, T.; Rolnick, S. D.; Rosati, M.; Rowan, Z.; Runchey, J.; Safonov, A. S.; Sakaguchi, T.; Sako, H.; Samsonov, V.; Sarsour, M.; Sato, K.; Sato, S.; Schaefer, B.; Schmoll, B. K.; Sedgwick, K.; Seidl, R.; Sen, A.; Seto, R.; Sexton, A.; Sharma, D.; Shein, I.; Shibata, T.-A.; Shigaki, K.; Shimomura, M.; Shioya, T.; Shukla, P.; Sickles, A.; Silva, C. L.; Silvermyr, D.; Singh, B. K.; Singh, C. P.; Singh, V.; Slunečka, M.; Smith, K. L.; Snowball, M.; Soltz, R. A.; Sondheim, W. E.; Sorensen, S. P.; Sourikova, I. V.; Stankus, P. W.; Stoll, S. P.; Sugitate, T.; Sukhanov, A.; Sumita, T.; Sun, J.; Syed, S.; Sziklai, J.; Takeda, A.; Tanida, K.; Tannenbaum, M. J.; Tarafdar, S.; Tarnai, G.; Tieulent, R.; Timilsina, A.; Todoroki, T.; Tomášek, M.; Towell, C. L.; Towell, R. S.; Tserruya, I.; Ueda, Y.; Ujvari, B.; van Hecke, H. W.; Vazquez-Carson, S.; Velkovska, J.; Virius, M.; Vrba, V.; Vukman, N.; Wang, X. R.; Wang, Z.; Watanabe, Y.; Watanabe, Y. S.; Wong, C. P.; Woody, C. L.; Xu, C.; Xu, Q.; Xue, L.; Yalcin, S.; Yamaguchi, Y. L.; Yamamoto, H.; Yanovich, A.; Yin, P.; Yoo, J. H.; Yoon, I.; Yu, H.; Yushmanov, I. E.; Zajc, W. A.; Zelenski, A.; Zharko, S.; Zou, L.; Phenix Collaboration

    2017-03-01

    We present measurements of long-range angular correlations and the transverse momentum dependence of elliptic flow v2 in high-multiplicity p +Au collisions at √{s NN}=200 GeV. A comparison of these results to previous measurements in high-multiplicity d +Au and 3He+Au collisions demonstrates a relation between v2 and the initial collision eccentricity ɛ2, suggesting that the observed momentum-space azimuthal anisotropies in these small systems have a collective origin and reflect the initial geometry. Good agreement is observed between the measured v2 and hydrodynamic calculations for all systems, and an argument disfavoring theoretical explanations based on initial momentum-space domain correlations is presented. The set of measurements presented here allows us to leverage the distinct intrinsic geometry of each of these systems to distinguish between different theoretical descriptions of the long-range correlations observed in small collision systems.

  4. Synthesis and characterization of Ge–Cr-based intermetallic compounds: GeCr3, GeCCr3, and GeNCr3

    International Nuclear Information System (INIS)

    Lin, S.; Tong, P.; Wang, B.S.; Huang, Y.N.; Song, W.H.; Sun, Y.P.

    2014-01-01

    Highlights: • Polycrystalline samples of GeCr 3 , GeCCr 3 , and GeNCr 3 are synthesized by using solid state reaction method. • A good quality of our samples is verified by the Rietveld refinement and electrical transport measurement. • We present a comprehensive understanding of physical properties of GeCr 3 , GeCCr 3 , and GeNCr 3 . -- Abstract: We report the synthesis of GeCr 3 , GeCCr 3 , and GeNCr 3 polycrystalline compounds, and present a systematic study of this series by the measurements of X-ray diffraction (XRD), magnetism, electrical/thermal transport, specific heat, and Hall coefficient. Good quality of our samples is verified by quite small value of residual resistivity and considerably large residual resistivity ratio. Based on the Rietveld refinement of XRD data, the crystallographic parameters are obtained, and, correspondingly, the sketches of crystal structure are plotted for all the samples. The ground states of GeCr 3 , GeCCr 3 , and GeNCr 3 are paramagnetic/antiferromagnetic metal, and even a Fermi-liquid behavior is observed in electrical transport at low temperatures. Furthermore, the analysis of the thermal conductivity data suggests the electron thermal conductivity plays a major role in total thermal conductivity for GeCr 3 at low temperatures, while the phonon thermal conductivity is dominant for GeCCr 3 and GeNCr 3 at high temperatures. The negative value of Seebeck coefficient and Hall coefficient indicate that the charge carriers are electron-type for GeCr 3 , GeCCr 3 , and GeNCr 3

  5. Production of microbial oil with high oleic acid content by Trichosporon capitatum

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hong; Zong, Minhua [State Key Laboratory of Pulp and Paper Engineering, College of Light Industry and Food Sciences, South China University of Technology, Guangzhou 510640 (China); Li, Yuanyuan; Chen, Lei [School of Biosciences and Bioengineering, South China University of Technology, Guangzhou 510640 (China)

    2011-01-15

    Microbial oils with high unsaturated fatty acids content, especially oleic acid content, are good feedstock for high quality biodiesel production. Trichosporon capitatum was found to accumulate lipid with around 80% oleic acid and 89% total unsaturated fatty acids content on nitrogen-limited medium. In order to improve its lipid yield, effects of medium components and culture conditions on cell growth and lipid accumulation were investigated. Optimization of media resulted in a 61% increase in the lipid yield of T. capitatum after cultivation at 28 C and 160 rpm for 6 days. In addition, T. capitatum could grow well on cane molasses and afford a lipid yield comparable to that on synthetic nitrogen-limited medium. The biodiesel from the microbial oil produced by T. capitatum on cane molasses displayed a low cold filter plugging point (-15 C), and so T. capitatum might be a promising strain to provide lipid suitable for high quality biodiesel production. (author)

  6. Enhancing protein to extremely high content in photosynthetic bacteria during biogas slurry treatment.

    Science.gov (United States)

    Yang, Anqi; Zhang, Guangming; Meng, Fan; Lu, Pei; Wang, Xintian; Peng, Meng

    2017-12-01

    This work proposed a novel approach to achieve an extremely high protein content in photosynthetic bacteria (PSB) using biogas slurry as a culturing medium. The results showed the protein content of PSB could be enhanced strongly to 90% in the biogas slurry, which was much higher than reported microbial protein contents. The slurry was partially purified at the same time. Dark-aerobic was more beneficial than light-anaerobic condition for protein accumulation. High salinity and high ammonia of the biogas slurry were the main causes for protein enhancement. In addition, the biogas slurry provided a good buffer system for PSB to grow. The biosynthesis mechanism of protein in PSB was explored according to theoretical analysis. During biogas slurry treatment, the activities of glutamate synthase and glutamine synthetase were increased by 26.55%, 46.95% respectively. Copyright © 2017 Elsevier Ltd. All rights reserved.

  7. iScreen: Image-Based High-Content RNAi Screening Analysis Tools.

    Science.gov (United States)

    Zhong, Rui; Dong, Xiaonan; Levine, Beth; Xie, Yang; Xiao, Guanghua

    2015-09-01

    High-throughput RNA interference (RNAi) screening has opened up a path to investigating functional genomics in a genome-wide pattern. However, such studies are often restricted to assays that have a single readout format. Recently, advanced image technologies have been coupled with high-throughput RNAi screening to develop high-content screening, in which one or more cell image(s), instead of a single readout, were generated from each well. This image-based high-content screening technology has led to genome-wide functional annotation in a wider spectrum of biological research studies, as well as in drug and target discovery, so that complex cellular phenotypes can be measured in a multiparametric format. Despite these advances, data analysis and visualization tools are still largely lacking for these types of experiments. Therefore, we developed iScreen (image-Based High-content RNAi Screening Analysis Tool), an R package for the statistical modeling and visualization of image-based high-content RNAi screening. Two case studies were used to demonstrate the capability and efficiency of the iScreen package. iScreen is available for download on CRAN (http://cran.cnr.berkeley.edu/web/packages/iScreen/index.html). The user manual is also available as a supplementary document. © 2014 Society for Laboratory Automation and Screening.

  8. A deep learning and novelty detection framework for rapid phenotyping in high-content screening

    Science.gov (United States)

    Sommer, Christoph; Hoefler, Rudolf; Samwer, Matthias; Gerlich, Daniel W.

    2017-01-01

    Supervised machine learning is a powerful and widely used method for analyzing high-content screening data. Despite its accuracy, efficiency, and versatility, supervised machine learning has drawbacks, most notably its dependence on a priori knowledge of expected phenotypes and time-consuming classifier training. We provide a solution to these limitations with CellCognition Explorer, a generic novelty detection and deep learning framework. Application to several large-scale screening data sets on nuclear and mitotic cell morphologies demonstrates that CellCognition Explorer enables discovery of rare phenotypes without user training, which has broad implications for improved assay development in high-content screening. PMID:28954863

  9. Room Temperature Ferromagnetic Mn:Ge(001

    Directory of Open Access Journals (Sweden)

    George Adrian Lungu

    2013-12-01

    Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

  10. Calcium content and high calcium adaptation of plants in karst areas of southwestern Hunan, China

    Directory of Open Access Journals (Sweden)

    X. Wei

    2018-05-01

    Full Text Available Rocky desertification is a major ecological problem of land degradation in karst areas. In these areas, the high soil calcium (Ca content has become an important environmental factor that can affect the restoration of vegetation. Consequently, the screening of plant species that can adapt to high Ca soil environments is a critical step in vegetation restoration. In this study, three grades of rocky desertification sample areas were selected in karst areas of southwestern Hunan, China (LRD: light rocky desertification; MRD: moderate rocky desertification; and IRD: intense rocky desertification. Each grade of these sample areas had three sample plots in different slope positions, each of which had four small quadrats (one in rocky-side areas, three in non-rocky-side areas. We measured the Ca content of leaves, branches, and roots from 41 plant species, as well as soil total Ca (TCa and exchangeable Ca (ECa at depths of 0–15, 15–30, and 30–45 cm in each small quadrat. The results showed that the soil Ca2+ content in rocky-side areas was significantly higher than that in non-rocky-side areas (p < 0.05. The mean soil TCa and ECa content increased gradually along with the grade of rocky desertification, in the order IRD > MRD > LRD. For all plant functional groups, the plant Ca content of aboveground parts was significantly higher than that of the belowground parts (p < 0.05. The soil ECa content had significant effects on plant Ca content of the belowground parts but had no significant effects on plant Ca content of the aboveground parts. Of the 41 plant species that were sampled, 17 were found to be dominant (important value > 1. The differences in Ca2+ content between the aboveground and belowground parts of the 17 dominant species were calculated, and their correlations with soil ECa content were analyzed. The results showed that these 17 species can be divided into three categories: Ca-indifferent plants, high

  11. Induced mutations in wheat, Triticum aestivum L., for high protein and lysine content

    International Nuclear Information System (INIS)

    Barriga, P.; Fuentes, R.

    1984-01-01

    With the aim of producing cultivars adapted to the Lakes Region of Chile (latitude 39-44 deg. South) with better protein content and high grain yield, in 1975 spring wheat seeds of genotypes Express and UACH-2-75 were irradiated with gamma rays in doses of 15, 25 and 35 Krad. The M 1 generation was field sown and harvested individually, initiating plant selection in the M 2 generation. The selection process, through six generations, has permitted to identify some mutants of high protein content. Two mutants UACH-2-I and UACH-3-I have been included in the National Co-operative Wheat Program for yield. A second experiment was initiated in 1981 with the objective of obtaining mutants not only for high protein content but also for high lysine content. For this purpose seeds of the spring wheat genotypes Huenufen and Austral were irradiated with gamma rays in doses of 10 and 25 Krad. The M 1 generation was sown at a high density and harvested in bulk. Selection per plant will start in the M 2 generation, continuing in the following. (author)

  12. Fe-based bulk amorphous alloys with iron contents as high as 82 at%

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jin-Feng; Liu, Xue; Zhao, Shao-Fan; Ding, Hong-Yu [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Yao, Ke-Fu, E-mail: kfyao@tsinghua.edu.cn [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2015-07-15

    Fe-based bulk amorphous alloys (BAAs) with high Fe contents are advantageous due to their high saturation magnetization and low cost. However, preparing Fe-based BAAs with Fe contents higher than 80 at% is difficult due to their poor glass forming abilities (GFA). In this study, an Fe{sub 81}P{sub 8.5}C{sub 5.5}B{sub 2}Si{sub 3} BAA with a diameter of 1 mm and a saturation magnetization of 1.56 T was successfully prepared using the fluxing and copper mold casting methods. In addition, by introducing a small amount of elemental Mo to the alloy, an Fe{sub 82}Mo{sub 1}P{sub 6.5}C{sub 5.5}B{sub 2}Si{sub 3} BAA rod with a diameter of 1 mm, a high saturation magnetization of 1.59 T, a high yield stress of 3265 MPa, and a clear plasticity of 1.3% was prepared in the same way. The cost effectiveness and good magnetic properties of these newly-developed Fe-based BAAs with Fe contents as high as 82 at% would be advantageous and promising for industrial applications. - Highlights: • Novel Fe-based BAA with no other metallic element except 81 at% Fe was prepared. • Fe-based bulk amorphous alloy (BAA) with the highest Fe content (82%) was prepared. • Very high saturation magnetization of 1.59 T has been achieved. • A new thought for designing Fe-based BAA with high Fe content was provided.

  13. High-content screening of yeast mutant libraries by shotgun lipidomics

    DEFF Research Database (Denmark)

    Tarasov, Kirill; Stefanko, Adam; Casanovas, Albert

    2014-01-01

    To identify proteins with a functional role in lipid metabolism and homeostasis we designed a high-throughput platform for high-content lipidomic screening of yeast mutant libraries. To this end, we combined culturing and lipid extraction in 96-well format, automated direct infusion...... factor KAR4 precipitated distinct lipid metabolic phenotypes. These results demonstrate that the high-throughput shotgun lipidomics platform is a valid and complementary proxy for high-content screening of yeast mutant libraries....... nanoelectrospray ionization, high-resolution Orbitrap mass spectrometry, and a dedicated data processing framework to support lipid phenotyping across hundreds of Saccharomyces cerevisiae mutants. Our novel approach revealed that the absence of genes with unknown function YBR141C and YJR015W, and the transcription...

  14. Improvement of cassava for high dry matter, starch and low cyanogenic glucoside content by mutation induction

    Energy Technology Data Exchange (ETDEWEB)

    Nwachukwu, E C; Mbanaso, E N.A.; Ene, L S.O. [Plant Breeding Div., National Root Crops Research Inst., Umudike, Umuahia (Nigeria)

    1997-07-01

    Cassava (Manihot esculenta Crantz) is an important food in Nigeria. One drawback in its use as a staple food is the presence of cyanogenic glucosides which on hydrolysis produce the very toxic hydrogen cyanide (HCN). To reduce the cyanogenic levels by mutation induction, three locally adopted and high yielding varieties of cassava, TMS 30572, NR 8817 and NR 84111 were irradiated with 20, 25 and 30 Gy gamma rays. There were a wide variation in HCN, dry matter and starch content of irradiated cassava plants, screened in the MV{sub 2} propagation. Fourteen cassavavariant lines were selected for low HCN content, and 22 lines for high dry matter content. These will be further tested for yield in replicated field trials. (author). 7 refs, 3 tabs.

  15. High content analysis of phagocytic activity and cell morphology with PuntoMorph

    DEFF Research Database (Denmark)

    Al-Ali, Hassan; Gao, Han; Dalby-Hansen, Camilla

    2017-01-01

    methods for quantifying phagocytic activity in multiple dimensions including speed, accuracy, and resolution. Conclusions We provide a framework to facilitate the development of high content assays suitable for drug screening. For convenience, we implemented our algorithm in a standalone software package...... with image-based quantification of phagocytic activity. New method We present a robust algorithm and cell-based assay system for high content analysis of phagocytic activity. The method utilizes fluorescently labeled beads as a phagocytic substrate with defined physical properties. The algorithm employs...... content screening. Results We tested our assay system using microglial cultures. Our results recapitulated previous findings on the effects of microglial stimulation on cell morphology and phagocytic activity. Moreover, our cell-level analysis revealed that the two phenotypes associated with microglial...

  16. Improvement of cassava for high dry matter, starch and low cyanogenic glucoside content by mutation induction

    International Nuclear Information System (INIS)

    Nwachukwu, E.C.; Mbanaso, E.N.A.; Ene, L.S.O.

    1997-01-01

    Cassava (Manihot esculenta Crantz) is an important food in Nigeria. One drawback in its use as a staple food is the presence of cyanogenic glucosides which on hydrolysis produce the very toxic hydrogen cyanide (HCN). To reduce the cyanogenic levels by mutation induction, three locally adopted and high yielding varieties of cassava, TMS 30572, NR 8817 and NR 84111 were irradiated with 20, 25 and 30 Gy gamma rays. There were a wide variation in HCN, dry matter and starch content of irradiated cassava plants, screened in the MV 2 propagation. Fourteen cassavavariant lines were selected for low HCN content, and 22 lines for high dry matter content. These will be further tested for yield in replicated field trials. (author). 7 refs, 3 tabs

  17. Neutron transmutation doped Ge bolometers

    Science.gov (United States)

    Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

    1983-01-01

    Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

  18. New high resolution measurements of open and hidden charm production in proton-nucleus collisions at √{ s} = 110GeV with LHCb

    Science.gov (United States)

    Maurice, Émilie; LHCb Collaboration

    2017-11-01

    Open and hidden charm production in nucleus-nucleus collisions is considered as a key probe of Quark Gluon Plasma (QGP) formation. In the search of specific QGP effects, proton-nucleus collisions are used as the reference as they account for the corresponding Cold Nuclear Matter (CNM) effects. The LHCb experiment, thanks to its System for Measuring Overlap with Gas (SMOG) can be operated in a fixed target mode with the LHC beams, at an intermediate center-of-mass energy between nominal SPS and RHIC energies. In 2015, for the first time, reactions of incident LHC proton beams on noble gas targets have been recorded by the LHCb experiment at a center-of-mass energy of 110 GeV and within the center-of-mass rapidity range - 2.77 high resolution measurements on open and hidden charm production obtained under these conditions are presented.

  19. Disappearance of back-to-back high-pT hadron correlations in central Au+Au collisions at sqrt[s NN ] =200 GeV.

    Science.gov (United States)

    Adler, C; Ahammed, Z; Allgower, C; Amonett, J; Anderson, B D; Anderson, M; Averichev, G S; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Bekele, S; Belaga, V V; Bellwied, R; Berger, J; Bichsel, H; Billmeier, A; Bland, L C; Blyth, C O; Bonner, B E; Boucham, A; Brandin, A; Bravar, A; Cadman, R V; Caines, H; Calderón de la Barca Sánchez, M; Cardenas, A; Carroll, J; Castillo, J; Castro, M; Cebra, D; Chaloupka, P; Chattopadhyay, S; Chen, Y; Chernenko, S P; Cherney, M; Chikanian, A; Choi, B; Christie, W; Coffin, J P; Cormier, T M; Corral, M M; Cramer, J G; Crawford, H J; Derevschikov, A A; Didenko, L; Dietel, T; Draper, J E; Dunin, V B; Dunlop, J C; Eckardt, V; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Fachini, P; Faine, V; Faivre, J; Fatemi, R; Filimonov, K; Finch, E; Fisyak, Y; Flierl, D; Foley, K J; Fu, J; Gagliardi, C A; Gagunashvili, N; Gans, J; Gaudichet, L; Germain, M; Geurts, F; Ghazikhanian, V; Grachov, O; Grigoriev, V; Guedon, M; Gushin, E; Hallman, T J; Hardtke, D; Harris, J W; Henry, T W; Heppelmann, S; Herston, T; Hippolyte, B; Hirsch, A; Hjort, E; Hoffmann, G W; Horsley, M; Huang, H Z; Humanic, T J; Igo, G; Ishihara, A; Ivanshin, Yu I; Jacobs, P; Jacobs, W W; Janik, M; Johnson, I; Jones, P G; Judd, E G; Kaneta, M; Kaplan, M; Keane, D; Kiryluk, J; Kisiel, A; Klay, J; Klein, S R; Klyachko, A; Kollegger, T; Konstantinov, A S; Kopytine, M; Kotchenda, L; Kovalenko, A D; Kramer, M; Kravtsov, P; Krueger, K; Kuhn, C; Kulikov, A I; Kunde, G J; Kunz, C L; Kutuev, R Kh; Kuznetsov, A A; Lakehal-Ayat, L; Lamont, M A C; Landgraf, J M; Lange, S; Lansdell, C P; Lasiuk, B; Laue, F; Lauret, J; Lebedev, A; Lednický, R; Leontiev, V M; LeVine, M J; Li, Q; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, L; Liu, Z; Liu, Q J; Ljubicic, T; Llope, W J; LoCurto, G; Long, H; Longacre, R S; Lopez-Noriega, M; Love, W A; Ludlam, T; Lynn, D; Ma, J; Magestro, D; Majka, R; Margetis, S; Markert, C; Martin, L; Marx, J; Matis, H S; Matulenko, Yu A; McShane, T S; Meissner, F; Melnick, Yu; Meschanin, A; Messer, M; Miller, M L; Milosevich, Z; Minaev, N G; Mitchell, J; Moore, C F; Morozov, V; de Moura, M M; Munhoz, M G; Nelson, J M; Nevski, P; Nikitin, V A; Nogach, L V; Norman, B; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Paic, G; Pandey, S U; Panebratsev, Y; Panitkin, S Y; Pavlinov, A I; Pawlak, T; Perevoztchikov, V; Peryt, W; Petrov, V A; Planinic, M; Pluta, J; Porile, N; Porter, J; Poskanzer, A M; Potrebenikova, E; Prindle, D; Pruneau, C; Putschke, J; Rai, G; Rakness, G; Ravel, O; Ray, R L; Razin, S V; Reichhold, D; Reid, J G; Renault, G; Retiere, F; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevski, O V; Romero, J L; Rose, A; Roy, C; Rykov, V; Sakrejda, I; Salur, S; Sandweiss, J; Savin, I; Schambach, J; Scharenberg, R P; Schmitz, N; Schroeder, L S; Schüttauf, A; Schweda, K; Seger, J; Seliverstov, D; Seyboth, P; Shahaliev, E; Shestermanov, K E; Shimanskii, S S; Simon, F; Skoro, G; Smirnov, N; Snellings, R; Sorensen, P; Sowinski, J; Spinka, H M; Srivastava, B; Stephenson, E J; Stock, R; Stolpovsky, A; Strikhanov, M; Stringfellow, B; Struck, C; Suaide, A A P; Sugarbaker, E; Suire, C; Sumbera, M; Surrow, B; Symons, T J M; Szanto de Toledo, A; Szarwas, P; Tai, A; Takahashi, J; Tang, A H; Thein, D; Thomas, J H; Thompson, M; Tikhomirov, V; Tokarev, M; Tonjes, M B; Trainor, T A; Trentalange, S; Tribble, R E; Trofimov, V; Tsai, O; Ullrich, T; Underwood, D G; Van Buren, G; VanderMolen, A M; Vasilevski, I M; Vasiliev, A N; Vigdor, S E; Voloshin, S A; Wang, F; Ward, H; Watson, J W; Wells, R; Westfall, G D; Whitten, C; Wieman, H; Willson, R; Wissink, S W; Witt, R; Wood, J; Xu, N; Xu, Z; Yakutin, A E; Yamamoto, E; Yang, J; Yepes, P; Yurevich, V I; Zanevski, Y V; Zborovský, I; Zhang, H; Zhang, W M; Zoulkarneev, R; Zubarev, A N

    2003-02-28

    Azimuthal correlations for large transverse momentum charged hadrons have been measured over a wide pseudorapidity range and full azimuth in Au+Au and p+p collisions at sqrt[s(NN)]=200 GeV. The small-angle correlations observed in p+p collisions and at all centralities of Au+Au collisions are characteristic of hard-scattering processes previously observed in high-energy collisions. A strong back-to-back correlation exists for p+p and peripheral Au+Au. In contrast, the back-to-back correlations are reduced considerably in the most central Au+Au collisions, indicating substantial interaction as the hard-scattered partons or their fragmentation products traverse the medium.

  20. High Neonatal Blood Iron Content Is Associated with the Risk of Childhood Type 1 Diabetes Mellitus

    Directory of Open Access Journals (Sweden)

    Julie Nyholm Kyvsgaard

    2017-11-01

    Full Text Available (1 Background: Iron requirement increases during pregnancy and iron supplementation is therefore recommended in many countries. However, excessive iron intake may lead to destruction of pancreatic β-cells. Therefore, we aim to test if higher neonatal iron content in blood is associated with the risk of developing type 1 diabetes mellitus (T1D in childhood; (2 Methods: A case-control study was conducted, including 199 children diagnosed with T1D before the age of 16 years from 1991 to 2005 and 199 controls matched on date of birth. Information on confounders was available in 181 cases and 154 controls. Iron was measured on a neonatal single dried blood spot sample and was analyzed by laser ablation inductively coupled plasma mass spectrometry. Multivariate logistic regression was used to evaluate if iron content in whole blood was associated with the risk of T1D; (3 Results: A doubling of iron content increased the odds of developing T1D more than two-fold (odds ratio (95% CI, 2.55 (1.04; 6.24. Iron content increased with maternal age (p = 0.04 and girls had higher content than boys (p = 0.01; (4 Conclusions: Higher neonatal iron content associates to an increased risk of developing T1D before the age of 16 years. Iron supplementation during early childhood needs further investigation, including the causes of high iron in neonates.

  1. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  2. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  3. The content and role of formal contracts in high-tech alliances

    NARCIS (Netherlands)

    de Jong, Gjalt; Woolthuis, Rosalinde Ja Klein

    2009-01-01

    In this study we investigate the governance structure of innovation processes in high-tech alliances, focusing on the content and role of formal contracts. The design of a formal agreement is one of the most important strategic decisions for alliance partners. Drawing upon transaction cost arguments

  4. Cultural Parallax and Content Analysis: Images of Black Women in High School History Textbooks

    Science.gov (United States)

    Woyshner, Christine; Schocker, Jessica B.

    2015-01-01

    This study investigates the representation of Black women in high school history textbooks. To examine the extent to which Black women are represented visually and to explore how they are portrayed, the authors use a mixed-methods approach that draws on analytical techniques in content analysis and from visual culture studies. Their findings…

  5. Exceptional heat stability of high protein content dispersions containing whey protein particles

    NARCIS (Netherlands)

    Saglam, D.; Venema, P.; Vries, de R.J.; Linden, van der E.

    2014-01-01

    Due to aggregation and/or gelation during thermal treatment, the amount of whey proteins that can be used in the formulation of high protein foods e.g. protein drinks, is limited. The aim of this study was to replace whey proteins with whey protein particles to increase the total protein content and

  6. Anti-cancer agents in Saudi Arabian herbals revealed by automated high-content imaging

    KAUST Repository

    Hajjar, Dina A.; Kremb, Stephan Georg; Sioud, Salim; Emwas, Abdul-Hamid M.; Voolstra, Christian R.; Ravasi, Timothy

    2017-01-01

    in cancer therapy. Here, we used cell-based phenotypic profiling and image-based high-content screening to study the mode of action and potential cellular targets of plants historically used in Saudi Arabia's traditional medicine. We compared the cytological

  7. Chemical segregation of progeny of camphor trees with high camphor c.q. Linalool content

    NARCIS (Netherlands)

    Khien, P.V.; Chien, Ho Trung; Dung, N.X.; Leclercq, A.X.; Leclercq, P.A.

    1998-01-01

    The propagation of open pollinated seed from two camphor trees with a high camphor and linalool content, respectively, yielded 115 progeny. The chemical composition of the leaf oils of these trees was analyzed by a combination of capillary GC and GC/MS. Four chemotypes could be distinguished among

  8. Calcium content and high calcium adaptation of plants in karst areas of southwestern Hunan, China

    Science.gov (United States)

    Wei, Xiaocong; Deng, Xiangwen; Xiang, Wenhua; Lei, Pifeng; Ouyang, Shuai; Wen, Hongfang; Chen, Liang

    2018-05-01

    Rocky desertification is a major ecological problem of land degradation in karst areas. In these areas, the high soil calcium (Ca) content has become an important environmental factor that can affect the restoration of vegetation. Consequently, the screening of plant species that can adapt to high Ca soil environments is a critical step in vegetation restoration. In this study, three grades of rocky desertification sample areas were selected in karst areas of southwestern Hunan, China (LRD: light rocky desertification; MRD: moderate rocky desertification; and IRD: intense rocky desertification). Each grade of these sample areas had three sample plots in different slope positions, each of which had four small quadrats (one in rocky-side areas, three in non-rocky-side areas). We measured the Ca content of leaves, branches, and roots from 41 plant species, as well as soil total Ca (TCa) and exchangeable Ca (ECa) at depths of 0-15, 15-30, and 30-45 cm in each small quadrat. The results showed that the soil Ca2+ content in rocky-side areas was significantly higher than that in non-rocky-side areas (p desertification, in the order IRD > MRD > LRD. For all plant functional groups, the plant Ca content of aboveground parts was significantly higher than that of the belowground parts (p 1). The differences in Ca2+ content between the aboveground and belowground parts of the 17 dominant species were calculated, and their correlations with soil ECa content were analyzed. The results showed that these 17 species can be divided into three categories: Ca-indifferent plants, high-Ca plants, and low-Ca plants. These findings provide a vital theoretical basis and practical guide for vegetation restoration and ecosystem reconstruction in rocky desertification areas.

  9. The gastroesophageal (GE) scintiscan in detection of GE reflux and pulmonary aspiration in children

    International Nuclear Information System (INIS)

    Arasu, T.S.; Franken, E.A.; Wyllie, R.; Eigen, H.; Grosfeld, J.L.; Siddiqui, A.R.; Fitzgerald, J.F.

    1980-01-01

    Gastroesophageal scintiscans and barium examinations were performed on 30 children with documented GE reflux and 13 control patients. After instillation of 2 mCi of Tc99m sulfur colloid into the stomach, serial images of the abdomen and thorax were obtained. The GE scintiscan was positive in 17 of 30 with GE reflux; the barium study was positive in 15 of 30. A positive scintiscan and/or barium study was found in 21 of 30 patients with reflux, and none of the controls. Pulmonay aspiration of gastric contents was not detected by either method. We conclude that the GE scintiscan is complementary to barium studies in the diagnosis of GE reflux, and neither study approaches the accuracy of more sophisticated tests [fr

  10. Gamma and electron radiation effects on agricultural by-products with high fibre content

    International Nuclear Information System (INIS)

    Leonhardt, J.W.; Baer, M.; Nehring, K.

    1983-01-01

    Gamma and electron radiation effects on wheat straw, oat straw, barley straw, rye straw and dried green fodder are reported. In vitro and in vivo studies show that the digestibility of these agricultural by-products with high fibre content can be increased up to 80% and more at high doses. The increase of the digestibility is connected with a depolymerization of the cellulose and hemicellulose. (author)

  11. The effect of High Pressure and High Temperature processing on carotenoids and chlorophylls content in some vegetables.

    Science.gov (United States)

    Sánchez, Celia; Baranda, Ana Beatriz; Martínez de Marañón, Iñigo

    2014-11-15

    The effect of High Pressure (HP) and High Pressure High Temperature (HPHT) processing on carotenoid and chlorophyll content of six vegetables was evaluated. In general, carotenoid content was not significantly influenced by HP or HPHT treatments (625 MPa; 5 min; 20, 70 and 117 °C). Regarding chlorophylls, HP treatment caused no degradation or slight increases, while HPHT processes degraded both chlorophylls. Chlorophyll b was more stable than chlorophyll a at 70 °C, but both of them were highly degraded at 117 °C. HPHT treatment at 117 °C provided products with a good retention of carotenoids and colour in the case of red vegetables. Even though the carotenoids also remained in the green vegetables, their chlorophylls and therefore their colour were so affected that milder temperatures need to be applied. As an industrial scale equipment was used, results will be useful for future industrial implementation of this technology. Copyright © 2014 Elsevier Ltd. All rights reserved.

  12. Internal friction in iron-aluminium alloys having a high aluminium content

    International Nuclear Information System (INIS)

    Hillairet, J.; Delaplace, J.; Silvent, A.

    1966-01-01

    By using a torsion pendulum to measure the internal friction of iron-aluminium alloys containing between 25 and 50 atom per cent of aluminium, it has been possible to show the existence of three damping peaks due to interstitial carbon. Their evolution is followed as a function of the carbon content, of the thermal treatment and of the aluminium content. A model based on the preferential occupation of tetrahedral sites is proposed as an interpretation of the results. A study of the Zener peak in these substitution alloys shows also that a part of the short distance disorder existing at high temperatures can be preserved by quenching. (author) [fr

  13. The effect of manganese content on mechanical properties of high titanium microalloyed steels

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaolin, E-mail: lixiaolinwork@163.com [Shougang Research Institute of Technology, Beijing 100041 (China); Li, Fei; Cui, Yang; Xiao, Baoliang [Shougang Research Institute of Technology, Beijing 100041 (China); Wang, Xuemin [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

    2016-11-20

    In this work, in order to achieve an optimum combination of high strength, ductility and toughness of high Ti microalloyed steel, extensive research efforts were exerted to study the effect of soaking temperature, manganese and sulfur content on properties of titanium steels. Precipitation hardening of Ti-bearing steels has been found to vary with different soaking temperature. Higher strength was achieved in these steels at higher soaking temperature due to dissolution of more TiC, Ti{sub 4}S{sub 2}C{sub 2} and little TiN, which lead to re-precipitation of fine carbides with greater volume fraction. The results of transmission electron microscope (TEM)analysis indicates that there were more and finer TiC precipitates coherent or semi-coherent with the ferrite matrix in the high manganese content steel than in low manganese content steel. The marked improvement in strength is also associated with low sulfur content. TiC particles smaller than 20 nm in 8Ti-8Mn steel help enhance strength to higher than 302 MPa compared with 8Mn steel.

  14. Single-crystal X-ray diffraction study of SrGeO3 high-pressure perovskite phase at 100 K

    Science.gov (United States)

    Nakatsuka, Akihiko; Arima, Hiroshi; Ohtaka, Osamu; Fujiwara, Keiko; Yoshiasa, Akira

    2017-10-01

    Single-crystal X-ray diffraction study of SrGeO3 perovskite (cubic; space group Pmɜ¯m) synthesized at 6 GPa and 1223 K was conducted at a low temperature of 100 K. The residual electron density revealed the presence of the bonding electron at the center of the Ge-O bond, in accordance with our previous conclusion that the Ge-O bond is strongly covalent. From comparison with our previous structure-refinement result at 296 K, the mean square displacement (MSD) of the O atom in the direction of the Ge-O bond is suggested to exhibit no significant temperature dependence, in contrast to that in the direction perpendicular to the bond. Thus, the strong covalency of the Ge-O bond can have a large influence on the temperature dependence of thermal vibration of the O atom.

  15. Ge nitride formation in N-doped amorphous Ge2Sb2Te5

    International Nuclear Information System (INIS)

    Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

    2007-01-01

    The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

  16. A High Resolution Capacitive Sensing System for the Measurement of Water Content in Crude Oil

    Science.gov (United States)

    Aslam, Muhammad Zubair; Tang, Tong Boon

    2014-01-01

    This paper presents the design of a non-intrusive system to measure ultra-low water content in crude oil. The system is based on a capacitance to phase angle conversion method. Water content is measured with a capacitance sensor comprising two semi-cylindrical electrodes mounted on the outer side of a glass tube. The presence of water induces a capacitance change that in turn converts into a phase angle, with respect to a main oscillator. A differential sensing technique is adopted not only to ensure high immunity against temperature variation and background noise, but also to eliminate phase jitter and amplitude variation of the main oscillator that could destabilize the output. The complete capacitive sensing system was implemented in hardware and experiment results using crude oil samples demonstrated that a resolution of ±50 ppm of water content in crude oil was achieved by the proposed design. PMID:24967606

  17. A High Resolution Capacitive Sensing System for the Measurement of Water Content in Crude Oil

    Directory of Open Access Journals (Sweden)

    Muhammad Zubair Aslam

    2014-06-01

    Full Text Available This paper presents the design of a non-intrusive system to measure ultra-low water content in crude oil. The system is based on a capacitance to phase angle conversion method. Water content is measured with a capacitance sensor comprising two semi-cylindrical electrodes mounted on the outer side of a glass tube. The presence of water induces a capacitance change that in turn converts into a phase angle, with respect to a main oscillator. A differential sensing technique is adopted not only to ensure high immunity against temperature variation and background noise, but also to eliminate phase jitter and amplitude variation of the main oscillator that could destabilize the output. The complete capacitive sensing system was implemented in hardware and experiment results using crude oil samples demonstrated that a resolution of ±50 ppm of water content in crude oil was achieved by the proposed design.

  18. Investigation of water content in primary upper shield of high temperature engineering test reactor (HTTR)

    International Nuclear Information System (INIS)

    Sumita, Junya; Sawa, Kazuhiro; Mogi, Haruyoshi; Itahashi, Shuuji; Kitami, Toshiyuki; Akutu, Youichi; Fuchita, Yasuhiro; Kawaguchi, Toru; Moriya, Masahiro

    1999-09-01

    A primary upper shield of the High Temperature Engineering Test Reactor (HTTR) is composed of concrete (grout) which is packed into iron frames. The main function of the primary upper shield is to attenuate neutron and gamma ray from the core, that leads to satisfy dose equivalent rate limit of operating floor and stand-pipe room. Water content in the concrete is one of the most important things because it strongly affects neutron-shielding ability. Then, we carried out out-of-pile experiments to investigate relationship between temperature and water content in the concrete. Based on the experimental results, a hydrolysis-diffusion model was developed to investigate water release behavior from the concrete. The model showed that water content used for shielding design in the primary upper shield of the HTTR will be maintained if temperature during operating life is under 110degC. (author)

  19. Designing novel bulk metallic glass composites with a high aluminum content.

    Science.gov (United States)

    Chen, Z P; Gao, J E; Wu, Y; Wang, H; Liu, X J; Lu, Z P

    2013-11-27

    The long-standing challenge for forming Al-based BMGs and their matrix composites with a critical size larger than 1 mm have not been answered over the past three decades. In this paper, we reported formation of a series of BMG matrix composites which contain a high Al content up to 55 at.%. These composites can be cast at extraordinarily low cooling rates, compatible with maximum rod diameters of over a centimetre in copper mold casting. Our results indicate that proper additions of transition element Fe which have a positive heat of mixing with the main constituents La and Ce can appreciably improve the formability of the BMG matrix composites by suppressing the precipitation of Al(La,Ce) phase resulted from occurrence of the phase separation. However, the optimum content of Fe addition is strongly dependant on the total amount of the Al content in the Al-(CoCu)-(La,Ce) alloys.

  20. Formulation and make-up of simulated concentrated water, high ionic content aqueous solution

    International Nuclear Information System (INIS)

    Gdowski, G.

    1997-01-01

    This procedure describes the formulation and make-up of Simulated Concentrated Water (SCW), a high-ionic-content water to be used for Activity E-20-50 Long-Term Corrosion Studies. This water has an ionic content which is nominally a factor of a thousand higher than that of representative waters at or near Yucca Mountain. Representative waters were chosen as J-13 well water [Harrar, 1990] and perched water at Yucca Mountain [Glassley, 1996]. J-13 well water is obtained from ground water that is in contact with the Topopah Spring tuff, which is the repository horizon rock. The perched water is located in the Topopah Spring tuff, but below the repository horizon and above the water table. A nominal thousand times higher ionic content was chosen to simulate the water that would result from the wetting of salts which have been previously deposited on a container surface

  1. Peel and pulp of baru (Dipteryx Alata Vog. provide high fiber, phenolic content and antioxidant capacity

    Directory of Open Access Journals (Sweden)

    Gabriela de Lima SANTIAGO

    2018-03-01

    Full Text Available Abstract Baru (Dipteryx alata Vog. is a native fruit of the Brazilian Savannah that can be used in the food industry and may contribute to the economy of the Brazilian Midwest. The proximate composition, the phenolic content and the antioxidant capacity of the peel, pulp and raw and roasted baru almond were examined and compared. Peel showed higher concentrations of dietary fibers (24.1 g/100 g followed by pulp and roasted almond (18 g/100 g and 16 g/100 g, respectively, and raw almond (12.0 g/100 g. However, the almonds presented the highest lipid and protein concentrations compared to baru peel and pulp. In addition, raw almond showed the highest total phenolic contents (1,107.0 mg GAE/100 g and antioxidant capacity, but the roasted almond, and baru peel with its pulp, also presented high phenolic contents. The correlation coefficients between phenolic content and antioxidant capacity (via ABTS and FRAP were strong and significant. The chemical composition of baru peel has not previously been reported. The results showed promising prospects for the consumption of baru pulp with its peel, the fruit component richest in fiber, whose phenolic content and antioxidant capacity are comparable to those of the baru almond.

  2. High renewable content sandwich structures based on flax-basalt hybrids and biobased epoxy polymers

    Science.gov (United States)

    Colomina, S.; Boronat, T.; Fenollar, O.; Sánchez-Nacher, L.; Balart, R.

    2014-05-01

    In the last years, a growing interest in the development of high environmental efficiency materials has been detected and this situation is more accentuated in the field of polymers and polymer composites. In this work, green composite sandwich structures with high renewable content have been developed with core cork materials. The base resin for composites was a biobased epoxy resin derived from epoxidized vegetable oils. Hybrid basalt-flax fabrics have been used as reinforcements for composites and the influence of the stacking sequence has been evaluated in order to optimize the appropriate laminate structure for the sandwich bases. Core cork materials with different thickness have been used to evaluate performance of sandwich structures thus leading to high renewable content composite sandwich structures. Results show that position of basalt fabrics plays a key role in flexural fracture of sandwich structures due to differences in stiffness between flax and basalt fibers.

  3. Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

    Science.gov (United States)

    Senaratne, C. L.; Wallace, P. M.; Gallagher, J. D.; Sims, P. E.; Kouvetakis, J.; Menéndez, J.

    2016-07-01

    Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%-16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectures incorporating Ge1-xSnx intermediate layers (x ˜ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1-x-ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account

  4. Different strain relaxation mechanisms in strained Si/Si sub 1 sub - sub x Ge sub x /Si heterostructures by high dose B sup + and BF sub 2 sup + doping

    CERN Document Server

    Chen, C C; Zhang, S L; Zhu, D Z; Vantomme, A

    2002-01-01

    Strained Si/Si sub 0 sub . sub 8 Ge sub 0 sub . sub 2 /Si heterostructures are implanted at room temperature with 7.5 keV B sup + and 33 keV BF sub 2 sup + ions to a high dose of 2x10 sup 1 sup 5 ions/cm sup 2 , respectively. The samples are subsequently subjected to three-step anneals (spacer anneal, oxidation anneal and rapid thermal anneal), which are used to simulate a real fabrication process of SiGe-based MOSFET devices. The damage induced by implantation and its recovery are characterized by 2 MeV sup 4 He sup + RBS/channeling spectrometry. A damage layer on the surface is induced by B sup + implantation, but BF sup + sub 2 ion implantation amorphizes the surface of Si/Si sub 0 sub . sub 8 Ge sub 0 sub . sub 2 /Si heterostructure. Channeling angular scans along the axial direction demonstrate that the strain stored in the SiGe layer could be nearly completely retained for the B sup + implanted and subsequently annealed sample. However, the strain in the BF sub 2 sup + implanted/annealed SiGe layer has...

  5. Content Analysis of the Concept of Addiction in High School Textbooks of Iran.

    Science.gov (United States)

    Mirzamohammadi, Mohammad Hasan; Mousavi, Sayedeh Zainab; Massah, Omid; Farhoudian, Ali

    2017-01-01

    This research sought to determine how well the causes of addiction, addiction harms, and prevention of addiction have been noticed in high school textbooks. We used descriptive method to select the main related components of the addiction concept and content analysis method for analyzing the content of textbooks. The study population comprised 61 secondary school curriculum textbooks and study sample consisted of 14 secondary school textbooks selected by purposeful sampling method. The tools for collecting data were "content analysis inventory" which its validity was confirmed by educational and social sciences experts and its reliability has been found to be 91%. About 67 components were prepared for content analysis and were divided to 3 categories of causes, harms, and prevention of addiction. The analysis units in this study comprised phrases, topics, examples, course topics, words, poems, images, questions, tables, and exercises. Results of the study showed that the components of the addiction concept have presented with 212 remarks in the textbooks. Also, the degree of attention given to any of the 3 main components of the addiction concept were presented as follows: causes with 52 (24.52%) remarks, harm with 89 (41.98%) remarks, and prevention with 71 (33.49%) remarks. In high school textbooks, little attention has been paid to the concept of addiction and mostly its biological dimension were addressed while social, personal, familial, and religious dimensions of addiction have been neglected.

  6. A Categorical Content Analysis of Highly Cited Literature Related to Trends and Issues in Special Education.

    Science.gov (United States)

    Arden, Sarah V; Pentimonti, Jill M; Cooray, Rochana; Jackson, Stephanie

    2017-07-01

    This investigation employs categorical content analysis processes as a mechanism to examine trends and issues in a sampling of highly cited (100+) literature in special education journals. The authors had two goals: (a) broadly identifying trends across publication type, content area, and methodology and (b) specifically identifying articles with disaggregated outcomes for students with learning disabilities (LD). Content analyses were conducted across highly cited (100+) articles published during a 20-year period (1992-2013) in a sample ( n = 3) of journals focused primarily on LD, and in one broad, cross-categorical journal recognized for its impact in the field. Results indicated trends in the article type (i.e., commentary and position papers), content (i.e., reading and behavior), and methodology (i.e., small proportions of experimental and quasi-experimental designs). Results also revealed stability in the proportion of intervention research studies when compared to previous analyses and a decline in the proportion of those that disaggregated data specifically for students with LD.

  7. Design of a small scale boiler package for testing high moisture content biofuels

    Energy Technology Data Exchange (ETDEWEB)

    Proctor, Andrew

    2005-07-01

    This report presents the results of a project to design a prototype, small-scale boiler (0.88 MWth output) to enable clean and efficient combustion of high moisture content (>30%) biomass fuels. The boiler was based on an open bottom smoke tube design, modified to incorporate water tubes in the combustion chamber running from front to back. These were added to support refractory bricks to create an extra pass in the boiler combustion chamber such that the reflected heat from the refractory increased the rate of evaporation of moisture from the fuel. A chain grate stoker was employed. The combustion tests involved three biofuels: wood pellets with a low moisture content (8-10%) (to provide combustion rates for a commercially proven biofuel); wood chips from forestry waste with a 30-40% moisture content; and spent mushroom compost with 70-75% moisture. The tests on the wood chips required a number of modifications to the fuel feeding system and to the boiler in order to achieve limited success and the tests with the mushroom compost were unsuccessful due to the combination of the high moisture content and the fuel's low calorific value. Experience gained with the wood chips suggested a number of improvements for a future boiler design. As well as describing the experimental work and test results, the report offers an economic analysis (capital costs, fuel costs, running costs) of the scheme.

  8. Influence of Ta Content in High Purity Niobium on Cavity Performance Preliminary Results*

    CERN Document Server

    Kneisel, P

    2004-01-01

    In a previous paper* a program designed to study the influence of the residual tantalum content on the superconducting properties of pure niobium metal for RF cavities was outlined. The main rationale for this program was based on a potential cost reduction for high purity niobium, if a less strict limit on the chemical specification for Ta content, which is not significantly affecting the RRR–value, could be tolerated for high performance cavities. Four ingots with different Ta contents have been melted and transformed into sheets. In each manufacturing step the quality of the material has been monitored by employing chemical analysis, neutron activation analysis, thermal conductivity measurements and evaluation of the mechanical properties. The niobium sheets have been scanned for defects by an eddy current device. From three of the four ingots—Ta contents 100, 600 and 1,200 wppm—two single cell cavities each of the CEBAF variety have been fabricated and a series of tests on each ...

  9. Optimizing cationic and neutral lipids for efficient gene delivery at high serum content.

    Science.gov (United States)

    Chan, Chia-Ling; Ewert, Kai K; Majzoub, Ramsey N; Hwu, Yeu-Kuang; Liang, Keng S; Leal, Cecília; Safinya, Cyrus R

    2014-01-01

    Cationic liposome (CL)-DNA complexes are promising gene delivery vectors with potential application in gene therapy. A key challenge in creating CL-DNA complexes for application is that their transfection efficiency (TE) is adversely affected by serum. In particular, little is known about the effects of a high serum content on TE, even though this may provide design guidelines for application in vivo. We prepared CL-DNA complexes in which we varied the neutral lipid [1,2-dioleoyl-sn-glycerophosphatidylcholine, glycerol-monooleate (GMO), cholesterol], the headgroup charge and chemical structure of the cationic lipid, and the ratio of neutral to cationic lipid; we then measured the TE of these complexes as a function of serum content and assessed their cytotoxicity. We tested selected formulations in two human cancer cell lines (M21/melanoma and PC-3/prostate cancer). In the absence of serum, all CL-DNA complexes of custom-synthesized multivalent lipids show high TE. Certain combinations of multivalent lipids and neutral lipids, such as MVL5(5+)/GMO-DNA complexes or complexes based on the dendritic-headgroup lipid TMVLG3(8+) exhibited high TE both in the absence and presence of serum. Although their TE still dropped to a small extent in the presence of serum, it reached or surpassed that of benchmark commercial transfection reagents, particularly at a high serum content. Two-component vectors (one multivalent cationic lipid and one neutral lipid) can rival or surpass benchmark reagents at low and high serum contents (up to 50%, v/v). We propose guidelines for optimizing the serum resistance of CL-DNA complexes based on a given cationic lipid. Copyright © 2014 John Wiley & Sons, Ltd.

  10. Preparation of novel ceramics with high CaO content from steel slag

    International Nuclear Information System (INIS)

    Zhao, Lihua; Li, Yu; Zhou, Yuanyuan; Cang, Daqiang

    2014-01-01

    Highlights: • Efficiently utilize such solid waste with high CaO content. • A novel ceramics was put forward by traditional ceramic process. • The novel ceramics attained high strength. • Sintering mechanisms of the novel ceramics were discussed. - Abstract: Steel slag, an industrial waste discharged from steelmaking process, cannot be extensively used in traditional aluminosilicate based ceramics manufacturing for its high content of calcium oxide. In order to efficiently utilize such solid waste, a method of preparing ceramics with high CaO content was put forward. In this paper, steel slag in combination with quartz, talcum, clay and feldspar was converted to a novel ceramic by traditional ceramic process. The sintering mechanism, microstructure and performances were studied by scanning electron microscope (SEM), X-ray diffraction (XRD) techniques, combined experimenting of linear shrinkage, water absorption and flexural strength. The results revealed that all crystal phases in the novel ceramic were pyroxene group minerals, including diopsite ferrian, augite and diopsite. Almost all raw materials including quartz joined the reaction and transformed into pyroxene or glass phase in the sintering process, and different kinds of clays and feldspars had no impact on the final crystal phases. Flexural strength of the ceramic containing 40 wt.% steel slag in raw materials can reach 143 MPa at sintering temperature of 1210 °C and its corresponding water absorption, weight loss, linear shrinkage were 0.02%, 8.8%, 6.0% respectively. Pyroxene group minerals in ceramics would contribute to the excellent physical and mechanical properties

  11. Active Learning Strategies for Phenotypic Profiling of High-Content Screens.

    Science.gov (United States)

    Smith, Kevin; Horvath, Peter

    2014-06-01

    High-content screening is a powerful method to discover new drugs and carry out basic biological research. Increasingly, high-content screens have come to rely on supervised machine learning (SML) to perform automatic phenotypic classification as an essential step of the analysis. However, this comes at a cost, namely, the labeled examples required to train the predictive model. Classification performance increases with the number of labeled examples, and because labeling examples demands time from an expert, the training process represents a significant time investment. Active learning strategies attempt to overcome this bottleneck by presenting the most relevant examples to the annotator, thereby achieving high accuracy while minimizing the cost of obtaining labeled data. In this article, we investigate the impact of active learning on single-cell-based phenotype recognition, using data from three large-scale RNA interference high-content screens representing diverse phenotypic profiling problems. We consider several combinations of active learning strategies and popular SML methods. Our results show that active learning significantly reduces the time cost and can be used to reveal the same phenotypic targets identified using SML. We also identify combinations of active learning strategies and SML methods which perform better than others on the phenotypic profiling problems we studied. © 2014 Society for Laboratory Automation and Screening.

  12. A new high-strength iron base austenitic alloy with good toughness and corrosion resistance (GE-EPRI alloy-TTL)

    International Nuclear Information System (INIS)

    Ganesh, S.

    1989-01-01

    A new high strength, iron based, austenitic alloy has been successfully developed by GE-EPRI to satisfy the strength and corrosion resistance requirements of large retaining rings for high capacity generators (>840Mw). This new alloy is a modified version of the EPRI alloy-T developed by the University of California, Berkeley, in an earlier EPRI program. It is age hardenable and has the nominal composition (weight %): 34.5 Ni, 5Cr, 3Ti, 1Nb, 1Ta, 1Mo, .5Al, .3V, .01B. This composition was selected based on detailed metallurgical and processing studies on modified versions of alloy-T. These studies helped establish the optimum processing conditions for the new alloy and enabled the successful scale-up production of three large (50-52 inch dia) test rings from a 5,000 lb VIM-VAR billet. The rings were metallurgically sound and exhibited yield strength capabilities in the range 145 to 220 ksi depending on the extent of hot/cold work induced. The test rings met or exceeded all the property goals. The above alloy can provide a good combination of strength, toughness and corrosion resistance and, through an suitable modification of chemistry or processing conditions, could be a viable candidate for high strength LWR internal applications. 3 figs

  13. Iron content and solubility in dust from high-alpine snow along a north-south transect of High Asia

    OpenAIRE

    Wu, Guangjian; Zhang, Chenglong; Li, Zhongqin; Zhang, Xuelei; Gao, Shaopeng

    2012-01-01

    This study describes the dissolved and insoluble iron fraction of dust (mineral aerosol) in high-alpine snow samples collected along a north-south transect across High Asia (Eastern Tien Shan, Qilian Shan, and Southern Tibetan Plateau). This dust provides the basic chemical properties of mid- and high-level tropospheric Asian dust that can supply the limiting iron nutrient for phytoplankton growth in the North Pacific. The iron content in Asian dust averages 4.95% in Eastern Tien Shan, 3.38–5...

  14. Variations in pore characteristics in high volatile bituminous coals: Implications for coal bed gas content

    Science.gov (United States)

    Mastalerz, Maria; Drobniak, A.; Strapoc, D.; Solano-Acosta, W.; Rupp, J.

    2008-01-01

    The Seelyville Coal Member of the Linton Formation (Pennsylvanian) in Indiana was studied to: 1) understand variations in pore characteristics within a coal seam at a single location and compare these variations with changes occurring between the same coal at different locations, 2) elaborate on the influence of mineral-matter and maceral composition on mesopore and micropore characteristics, and 3) discuss implications of these variations for coal bed gas content. The coal is high volatile bituminous rank with R0 ranging from 0.57% to 0.60%. BET specific surface areas (determined by nitrogen adsorption) of the coals samples studied range from 1.8 to 22.9??m2/g, BJH adsorption mesopore volumes from 0.0041 to 0.0339??cm3/g, and micropore volumes (determined by carbon dioxide adsorption) from 0.0315 to 0.0540??cm3/g. The coals that had the largest specific surface areas and largest mesopore volumes occur at the shallowest depths, whereas the smallest values for these two parameters occur in the deepest coals. Micropore volumes, in contrast, are not depth-dependent. In the coal samples examined for this study, mineral-matter content influenced both specific surface area as well as mesopore and micropore volumes. It is especially clear in the case of micropores, where an increase in mineral-matter content parallels the decrease of micropore volume of the coal. No obvious relationships were observed between the total vitrinite content and pore characteristics but, after splitting vitrinite into individual macerals, we see that collotelinite influences both meso- and micropore volume positively, whereas collodetrinite contributes to the reduction of mesopore and micropore volumes. There are large variations in gas content within a single coal at a single location. Because of this variability, the entire thickness of the coal must be desorbed in order to determine gas content reliably and to accurately calculate the level of gas saturation. ?? 2008 Elsevier B.V. All

  15. [Low caloric value and high salt content in the meals served in school canteens].

    Science.gov (United States)

    Paiva, Isabel; Pinto, Carlos; Queirós, Laurinda; Meister, Maria Cristina; Saraiva, Margarida; Bruno, Paula; Antunes, Delfina; Afonso, Manuel

    2011-01-01

    School lunch can contribute to aggravate food quality, by excess or deficiency, or it can contribute to compensate and alleviate them. This school meal should be an answer to combating the epidemic of obesity, and to feed some grace children. The objective was to study the nutritional composition of catering in canteens of public schools, from Northern municipalities in the District of Porto: Vila do Conde, Póvoa de Varzim, Santo Tirso and Trofa. Meals were subjected to laboratory analysis. Thirty two meals, four per each school were analysed, reference values for the analysis of the nutritional composition of meals were dietary reference intakes (USA) and eating well at school (UK). The average energy meal content was 447 kcal and the median 440 kcal (22% of daily calories). The average values of nutrients, per meal, were: lipids 9, 8 g, carbohydrate 65,7 g and proteins 24,0 g. In average the contribution for the meal energy was: 20% fat, 59% carbohydrate and 21% protein. In more than 75% of meals the contribution of lipid content was below the lower bound of the reference range. The average content of sodium chloride per meal was 3.4 g, and the confidence interval 95% to average 3.0 to 3.8 g, well above the recommended maximum value of 1.5 grams. The average content fiber per meal was 10.8 g higher than the minimum considered appropriate. In conclusion, the value low caloric meals was mainly due to the low fat content, and content salt of any of the components of the meal was very high.

  16. Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

    Science.gov (United States)

    Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

    2012-02-01

    High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

  17. Critical thickness for strain relaxation of Ge{sub 1−x}Sn{sub x} (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wei; Zhou, Qian; Dong, Yuan; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Tok, Eng Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-06-08

    We investigated the critical thickness (h{sub c}) for plastic relaxation of Ge{sub 1−x}Sn{sub x} grown by molecular beam epitaxy. Ge{sub 1−x}Sn{sub x} films with various Sn mole fraction x (x ≤ 0.17) and different thicknesses were grown on Ge(001). The strain relaxation of Ge{sub 1−x}Sn{sub x} films and the h{sub c} were investigated by high-resolution x-ray diffraction and reciprocal space mapping. It demonstrates that the measured h{sub c} values of Ge{sub 1−x}Sn{sub x} layers are as much as an order of magnitude larger than that predicted by the Matthews and Blakeslee (M-B) model. The People and Bean (P-B) model was also used to predict the h{sub c} values in Ge{sub 1−x}Sn{sub x}/Ge system. The measured h{sub c} values for various Sn content follow the trend, but slightly larger than that predicted by the P-B model.

  18. Thermal conductivity of sputtered amorphous Ge films

    International Nuclear Information System (INIS)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

    2014-01-01

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids

  19. Determination of oxygen content in high Tc superconductors by deuteron particle activation analysis

    International Nuclear Information System (INIS)

    Tao Zhenlan; Yao, Y.D.; Kao, Y.H.

    1993-01-01

    The experimental method for determining the oxygen content in high T c superconductors is described in detail. This method is applied to determination of oxygen content in high T c Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O samples in which the stoichiometry is varied by reducing the copper and bismuth concentrations. The oxygen concentration is found to vary linearly with Cu(x = 0-0.2) and Bi (x = 0-0.4) deficiencies in YBa 2 Cu 3(1-x )O y and Bi 2(1-x) Sr 2 CaCu 2 O y respectively. X-ray powder diffraction measurements show that the compound of YBa 2 Cu 3(1-x) O y is orthorhombic in the variation range of x = 0-0.2

  20. Localization-based super-resolution imaging meets high-content screening.

    Science.gov (United States)

    Beghin, Anne; Kechkar, Adel; Butler, Corey; Levet, Florian; Cabillic, Marine; Rossier, Olivier; Giannone, Gregory; Galland, Rémi; Choquet, Daniel; Sibarita, Jean-Baptiste

    2017-12-01

    Single-molecule localization microscopy techniques have proven to be essential tools for quantitatively monitoring biological processes at unprecedented spatial resolution. However, these techniques are very low throughput and are not yet compatible with fully automated, multiparametric cellular assays. This shortcoming is primarily due to the huge amount of data generated during imaging and the lack of software for automation and dedicated data mining. We describe an automated quantitative single-molecule-based super-resolution methodology that operates in standard multiwell plates and uses analysis based on high-content screening and data-mining software. The workflow is compatible with fixed- and live-cell imaging and allows extraction of quantitative data like fluorophore photophysics, protein clustering or dynamic behavior of biomolecules. We demonstrate that the method is compatible with high-content screening using 3D dSTORM and DNA-PAINT based super-resolution microscopy as well as single-particle tracking.

  1. Biobleaching chemistry of laccase-mediator systems on high-lignin-content kraft pulps

    International Nuclear Information System (INIS)

    Chakar, F.S.; Ragauskas, A.J.

    2004-01-01

    A high-lignin-content softwood kraft pulp was reacted with laccase in the presence of 1-hydroxybenzotriazole (HBT), N-acetyl-N-phenylhydroxylamine (NHA), and violuric acid (VA). The biodelignification response with violuric acid was superior to both 1-hydroxybenzotriazole and N-acetyl-N-phenylhydroxylamine. NMR analysis of residual lignins isolated before and after the biobleaching treatments revealed that the latter material was highly oxidized and that the magnitude of structural changes was most pronounced with the laccase - violuric acid biobleaching system. An increase in the content of carboxylic acid groups and a decrease in methoxyl groups were noted with all three laccase-mediator systems. The oxidation biobleaching pathway is directed primarily towards noncondensed C5 phenolic lignin functional structures for all three laccase-mediated systems. The laccase - violuric acid system was also reactive towards C5-condensed phenolic lignin structures. (author)

  2. Nonisothermal Thermogravimetric Analysis of Thai Lignite with High CaO Content

    Science.gov (United States)

    Pintana, Pakamon

    2013-01-01

    Thermal behaviors and combustion kinetics of Thai lignite with different SO3-free CaO contents were investigated. Nonisothermal thermogravimetric method was carried out under oxygen environment at heating rates of 10, 30, and 50°C min−1 from ambient up to 1300°C. Flynn-Wall-Ozawa (FWO) and Kissinger-Akahira-Sunose (KAS) methods were adopted to estimate the apparent activation energy (E) for the thermal decomposition of these coals. Different thermal degradation behaviors were observed in lignites with low (14%) and high (42%) CaO content. Activation energy of the lignite combustion was found to vary with the conversion fraction. In comparison with the KAS method, higher E values were obtained by the FWO method for all conversions considered. High CaO lignite was observed to have higher activation energy than the low CaO coal. PMID:24250259

  3. Seismic Performance Comparison of a High-Content SDA Frame and Standard RC Frame

    Directory of Open Access Journals (Sweden)

    John W. van de Lindt

    2011-01-01

    Full Text Available This study presents the method and results of an experiment to study the seismic behavior of a concrete portal frame with fifty percent of its cement content replaced with a spray dryer ash (SDA. Based on multiple-shake-table tests, the high content SDA frame was found to perform as well as the standard concrete frame for two earthquakes exceeding design-level intensity earthquakes. Hence, from a purely seismic/structural standpoint, it may be possible to replace approximately fifty percent of cement in a concrete mix with SDA for the construction of structural members in high seismic zones. This would help significantly redirect spray dryer ash away from landfills, thus, providing a sustainable greener alternative to concrete that uses only Portland cement, or only a small percentage of SDA or fly ash.

  4. Preventing performance drops of coal mills due to high moisture content

    DEFF Research Database (Denmark)

    Odgaard, Peter Fogh; Stoustrup, Jakob; Mataji, B.

    2007-01-01

    Coal mills pulverize and dry the coal dust before it is blown into the furnace in coal-fired power plants. The coal mills can only deliver the requested coal flow if certain conditions are fulfilled. These are normally considered as constraints on individual variables. However, combinations of more...... than one variable might cause problems even though these individually variables are in an acceptable region. This paper deals with such a problem. The combination of a high load of the power plant, a large load change and high moisture content in the coal, can force the coal mill into a state where...... coal is accumulated instead of being blown into the furnace. This paper suggests a simple method for preventing the accumulation of the coal in the mill, by limiting the requested coal flow considering the coal moisture content and the temperature outside the mill.  ...

  5. Growth and characterization of highly tensile strained Ge{sub 1−x}Sn{sub x} formed on relaxed In{sub y}Ga{sub 1−y}P buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wei; D' Costa, Vijay Richard; Dong, Yuan; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Loke, Wan Khai; Yoon, Soon Fatt [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Yin, Tingting; Shen, Zexiang [School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore 138634 (Singapore); Tok, Eng Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2016-03-28

    Ge{sub 0.94}Sn{sub 0.06} films with high tensile strain were grown on strain-relaxed In{sub y}Ga{sub 1−y}P virtual substrates using solid-source molecular beam epitaxy. The in-plane tensile strain in the Ge{sub 0.94}Sn{sub 0.06} film was varied by changing the In mole fraction in In{sub x}Ga{sub 1−x}P buffer layer. The tensile strained Ge{sub 0.94}Sn{sub 0.06} films were investigated by transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. An in-plane tensile strain of up to 1% in the Ge{sub 0.94}Sn{sub 0.06} was measured, which is much higher than that achieved using other buffer systems. Controlled thermal anneal experiment demonstrated that the strain was not relaxed for temperatures up to 500 °C. The band alignment of the tensile strained Ge{sub 0.94}Sn{sub 0.06} on In{sub 0.77}Ga{sub 0.23}P was obtained by high resolution x-ray photoelectron spectroscopy. The Ge{sub 0.94}Sn{sub 0.06}/In{sub 0.77}Ga{sub 0.23}P interface was found to be of the type I band alignment, with a valence band offset of 0.31 ± 0.12 eV and a conduction band offset of 0.74 ± 0.12 eV.

  6. Nanoscale high-content analysis using compositional heterogeneities of single proteoliposomes

    DEFF Research Database (Denmark)

    Mathiasen, Signe; Christensen, Sune M.; Fung, Juan José

    2014-01-01

    Proteoliposome reconstitution is a standard method to stabilize purified transmembrane proteins in membranes for structural and functional assays. Here we quantified intrareconstitution heterogeneities in single proteoliposomes using fluorescence microscopy. Our results suggest that compositional...... heterogeneities can severely skew ensemble-average proteoliposome measurements but also enable ultraminiaturized high-content screens. We took advantage of this screening capability to map the oligomerization energy of the β2-adrenergic receptor using ∼10(9)-fold less protein than conventional assays....

  7. Investigation of the photoluminescence properties of composite optical resins containing high lanthanide content

    International Nuclear Information System (INIS)

    Wang Dongmei; Wang Fuxiang; Peng Weixian

    2012-01-01

    Novel composite optical resins with high lanthanide content have been synthesized through a free radical copolymerization of methacrylic acid (MA), styrene (St) and Eu(DBM) 3 ·H 2 O nanocrystals. We characterized the structure, the thermal properties, dimensions and photoluminescence properties of Eu(DBM) 3 ·H 2 O nanocrystals. Our results indicated that the diameters of the Eu(DBM) 3 ·H 2 O nanocrystals were within the range of 30 to 300 nm. These materials exhibited characteristic europium ion luminescence. The europium-bearing nanocrystals and were then incorporated into the copolymer systems of MA/St and luminescence functional optical resins with high lanthanide content (50 wt%) were obtained. The combination of these particles and optical resins is facile because the diameter of Eu(DBM) 3 ·H 2 O is decreased. These copolymer-based optical resins not only possess good transparency and mechanical performance, but also exhibit an intense narrow band emission of lanthanide complexes and longer fluorescence lifetimes under UV excitation at room temperature. - Highlights: ► Novel composite optical resins with high lanthanide content have been synthesized. ► The Eu(DBM) 3 ·H 2 O nanocrystals were within the range of 30 to 300 nm. ► Fluorescent resins with high lanthanide content (50 wt%) were obtained. ► Resins exhibit intense emission of lanthanide and longer fluorescence lifetimes. ► Variety properties of Eu(DBM) 3 ·H 2 O nanocrystals were characterized.

  8. Dexterous robotic manipulation of alert adult Drosophila for high-content experimentation.

    Science.gov (United States)

    Savall, Joan; Ho, Eric Tatt Wei; Huang, Cheng; Maxey, Jessica R; Schnitzer, Mark J

    2015-07-01

    We present a robot that enables high-content studies of alert adult Drosophila by combining operations including gentle picking; translations and rotations; characterizations of fly phenotypes and behaviors; microdissection; or release. To illustrate, we assessed fly morphology, tracked odor-evoked locomotion, sorted flies by sex, and dissected the cuticle to image neural activity. The robot's tireless capacity for precise manipulations enables a scalable platform for screening flies' complex attributes and behavioral patterns.

  9. Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

    International Nuclear Information System (INIS)

    Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

    2006-01-01

    Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

  10. The development of high-content screening (HCS) technology and its importance to drug discovery.

    Science.gov (United States)

    Fraietta, Ivan; Gasparri, Fabio

    2016-01-01

    High-content screening (HCS) was introduced about twenty years ago as a promising analytical approach to facilitate some critical aspects of drug discovery. Its application has spread progressively within the pharmaceutical industry and academia to the point that it today represents a fundamental tool in supporting drug discovery and development. Here, the authors review some of significant progress in the HCS field in terms of biological models and assay readouts. They highlight the importance of high-content screening in drug discovery, as testified by its numerous applications in a variety of therapeutic areas: oncology, infective diseases, cardiovascular and neurodegenerative diseases. They also dissect the role of HCS technology in different phases of the drug discovery pipeline: target identification, primary compound screening, secondary assays, mechanism of action studies and in vitro toxicology. Recent advances in cellular assay technologies, such as the introduction of three-dimensional (3D) cultures, induced pluripotent stem cells (iPSCs) and genome editing technologies (e.g., CRISPR/Cas9), have tremendously expanded the potential of high-content assays to contribute to the drug discovery process. Increasingly predictive cellular models and readouts, together with the development of more sophisticated and affordable HCS readers, will further consolidate the role of HCS technology in drug discovery.

  11. Retrogradation of Maize Starch after High Hydrostatic Pressure Gelation: Effect of Amylose Content and Depressurization Rate

    KAUST Repository

    Yang, Zhi

    2016-05-24

    High hydrostatic pressure (HHP) has been employed to gelatinize or physically modify starch dispersions. In this study, waxy maize starch, normal maize starch, and two high amylose content starch were processed by a HHP of the order of 600 MPa, at 25°C for 15min. The effect of HHP processing on the crystallization of maize starches with various amylose content during storage at 4°C was investigated. Crystallization kinetics of HHP treated starch gels were investigated using rheology and FTIR. The effect of crystallization on the mechanical properties of starch gel network were evaluated in terms of dynamic complex modulus (G*). The crystallization induced increase of short-range helices structures were investigated using FTIR. The pressure releasing rate does not affect the starch retrogradation behaviour. The rate and extent of retrogradation depends on the amylose content of amylose starch. The least retrogradation was observed in HHP treated waxy maize starch. The rate of retrogradation is higher for HHP treated high amylose maize starch than that of normal maize starch. A linear relationship between the extent of retrogradation (phase distribution) measured by FTIR and G* is proposed.

  12. Towards high-siderophore-content foods: optimisation of coprogen production in submerged cultures of Penicillium nalgiovense.

    Science.gov (United States)

    Emri, Tamás; Tóth, Viktória; Nagy, Csilla Terézia; Nagy, Gábor; Pócsi, Imre; Gyémánt, Gyöngyi; Antal, Károly; Balla, József; Balla, György; Román, Gyula; Kovács, István; Pócsi, István

    2013-07-01

    Fungal siderophores are likely to possess atheroprotective effects in humans, and therefore studies are needed to develop siderophore-rich food additives or functional foods to increase the siderophore uptake in people prone to cardiovascular diseases. In this study the siderophore contents of mould-ripened cheeses and meat products were analysed and the coprogen production by Penicillium nalgiovense was characterised. High concentrations of hexadentate fungal siderophores were detected in penicillia-ripened Camembert- and Roquefort-type cheeses and also in some sausages. In one sausage fermented by P. nalgiovense, the siderophore content was comparable to those found in cheeses. Penicillium nalgiovense produced high concentrations of coprogen in submerged cultures, which were affected predominantly by the available carbon and nitrogen sources under iron starvation. Considerable coprogen yields were still detectable in the presence of iron when the fermentation medium was supplemented with the iron chelator Na₂-EDTA or when P. nalgiovense was co-cultivated with Saccharomyces cerevisiae. These data may be exploitable in the future development of high-siderophore-content foods and/or food additives. Nevertheless, the use of P. nalgiovense fermentation broths for these purposes may be limited by the instability of coprogen in fermentation media and by the β-lactam production by the fungus. © 2012 Society of Chemical Industry.

  13. Retrogradation of Maize Starch after High Hydrostatic Pressure Gelation: Effect of Amylose Content and Depressurization Rate

    Science.gov (United States)

    Yang, Zhi; Swedlund, Peter; Gu, Qinfen; Hemar, Yacine; Chaieb, Sahraoui

    2016-01-01

    High hydrostatic pressure (HHP) has been employed to gelatinize or physically modify starch dispersions. In this study, waxy maize starch, normal maize starch, and two high amylose content starch were processed by a HHP of the order of 600 MPa, at 25°C for 15min. The effect of HHP processing on the crystallization of maize starches with various amylose content during storage at 4°C was investigated. Crystallization kinetics of HHP treated starch gels were investigated using rheology and FTIR. The effect of crystallization on the mechanical properties of starch gel network were evaluated in terms of dynamic complex modulus (G*). The crystallization induced increase of short-range helices structures were investigated using FTIR. The pressure releasing rate does not affect the starch retrogradation behaviour. The rate and extent of retrogradation depends on the amylose content of amylose starch. The least retrogradation was observed in HHP treated waxy maize starch. The rate of retrogradation is higher for HHP treated high amylose maize starch than that of normal maize starch. A linear relationship between the extent of retrogradation (phase distribution) measured by FTIR and G* is proposed. PMID:27219066

  14. Retrogradation of Maize Starch after High Hydrostatic Pressure Gelation: Effect of Amylose Content and Depressurization Rate.

    Directory of Open Access Journals (Sweden)

    Zhi Yang

    Full Text Available High hydrostatic pressure (HHP has been employed to gelatinize or physically modify starch dispersions. In this study, waxy maize starch, normal maize starch, and two high amylose content starch were processed by a HHP of the order of 600 MPa, at 25°C for 15min. The effect of HHP processing on the crystallization of maize starches with various amylose content during storage at 4°C was investigated. Crystallization kinetics of HHP treated starch gels were investigated using rheology and FTIR. The effect of crystallization on the mechanical properties of starch gel network were evaluated in terms of dynamic complex modulus (G*. The crystallization induced increase of short-range helices structures were investigated using FTIR. The pressure releasing rate does not affect the starch retrogradation behaviour. The rate and extent of retrogradation depends on the amylose content of amylose starch. The least retrogradation was observed in HHP treated waxy maize starch. The rate of retrogradation is higher for HHP treated high amylose maize starch than that of normal maize starch. A linear relationship between the extent of retrogradation (phase distribution measured by FTIR and G* is proposed.

  15. New formulations of sunflower based bio-lubricants with high oleic acid content – VOSOLUB project

    Directory of Open Access Journals (Sweden)

    Leao J. D.

    2016-09-01

    Full Text Available VOSOLUB project is a demonstration project supported by Executive Agency for Small and Medium-sized Enterprises (EASME that aims at testing under real operating conditions new formulations of sunflower-based biolubricants with high oleic acid content. These biolubricant formulations (including hydraulic fluids, greases, and neat oil metal-working fluids will be tested in three European demonstrating sites. Their technical performance will be evaluated and compared to corresponding mineral lubricants ones. In order to cover the demand for the sunflower base oil, a European SMEs network will be established to ensure the supply of the base at a competitive market price. Results presented concerns the base oil quality confirmed to be in accordance with the specification required, in particular on Free Fatty acid content, Phosphorus content, rancimat induction time and oleic acid content (ITERG. The oil characteristics specific for lubricant application analyzed by BfB Oil Research under normalized methods, match with lubricant specifications requirement such as viscosity, cold & hot properties, surface properties, anti-oxidant properties and thermal stability, anti-wear and EP properties, anti-corrosion properties Performance of the new biolubricant have been assessed by formulators and TEKNIKER First results on the use of new lubricant on real condition for rail Grease (produced by RS CLARE and tested with Sheffield Supertram, Hydraulic oil (produced by BRUGAROLAS and cutting oil (produced by MOTUL TECH and tested with innovative machining, turning are described.

  16. The Role of Content Knowledge in Ill-Structured Problem Solving for High School Physics Students

    Science.gov (United States)

    Milbourne, Jeff; Wiebe, Eric

    2018-02-01

    While Physics Education Research has a rich tradition of problem-solving scholarship, most of the work has focused on more traditional, well-defined problems. Less work has been done with ill-structured problems, problems that are better aligned with the engineering and design-based scenarios promoted by the Next Generation Science Standards. This study explored the relationship between physics content knowledge and ill-structured problem solving for two groups of high school students with different levels of content knowledge. Both groups of students completed an ill-structured problem set, using a talk-aloud procedure to narrate their thought process as they worked. Analysis of the data focused on identifying students' solution pathways, as well as the obstacles that prevented them from reaching "reasonable" solutions. Students with more content knowledge were more successful reaching reasonable solutions for each of the problems, experiencing fewer obstacles. These students also employed a greater variety of solution pathways than those with less content knowledge. Results suggest that a student's solution pathway choice may depend on how she perceives the problem.

  17. Enhancement of lipid accumulation by oleaginous yeast through phosphorus limitation under high content of ammonia.

    Science.gov (United States)

    Huang, Xiangfeng; Luo, Huijuan; Mu, Tianshuai; Shen, Yi; Yuan, Ming; Liu, Jia

    2018-04-18

    Low concentrations of acetic acid were used as carbon source to cultivate Cryptococcus curvatus MUCL 29819 for lipid production under high content of ammonia. Phosphorus limitation combined with initial pH regulation (pH = 6) weakened inhibition of free ammonia and promoted lipid accumulation. In batch cultivation, the produced lipid content and yield was 30.3% and 0.92 g/L, higher than those under unlimited condition (18.3% and 0.64 g/L). The content of monounsaturated fatty acid also increased from 37.3% (unlimited condition) to 45.8% (phosphorus-limited condition). During sequencing batch cultivation (SBC), the lipid content reached up to 51.02% under phosphorus-limited condition while only 31.88% under unlimited condition, which can be explained by the higher conversion efficiency of the carbon source to lipid. The total energy consumption including lipid extraction, transesterification and purification was 7.47 and 8.33 GJ under phosphorus-limited and unlimited condition, respectively. Copyright © 2018. Published by Elsevier Ltd.

  18. Synthesis and first-principle calculations of the structural and electronic properties of Ge-substituted type-VIII Ba{sub 8}Ga{sub 16}Sn{sub 30} clathrate

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Lanxian [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Provincial Renewable Energy Engineering Key Lab, Solar Energy Research Institution, Yunnan Normal University, Kunming 650500 (China); Li, Decong [College of Optoelectronic Engineering, Yunnan Open University, Kunming 650500 (China); Liu, Hongxia; Liu, Zuming [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Provincial Renewable Energy Engineering Key Lab, Solar Energy Research Institution, Yunnan Normal University, Kunming 650500 (China); Deng, Shukang, E-mail: skdeng@126.com [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Provincial Renewable Energy Engineering Key Lab, Solar Energy Research Institution, Yunnan Normal University, Kunming 650500 (China)

    2016-12-01

    In this study, the structural and electronic structural properties of Ba{sub 8}Ga{sub 16}Sn{sub 30−x}Ge{sub x} (0≤x≤30) are determined by the first-principle method on the basis of density functional theory. Consistent with experimental findings, calculated results reveal that Ge atoms preferentially occupy the 2a and 24g sites in these compounds. As the content of Ge in Ge-substituted clathrate is increased, the lattice parameter is decreased, and the structural stability is enhanced. The bandgaps of the compound at 1≤x≤10 are smaller than those of Ba{sub 8}Ga{sub 16}Sn{sub 30}. By contrast, the bandgaps of the compound at x>10 are larger than those of Ba{sub 8}Ga{sub 16}Sn{sub 30}. The substitution of Ge for Sn affects p-type conductivity but not n-type conductivity. As Ge content increases, the whole conduction band moves to the direction of high energy, and the density of states of valence-band top decreases. The calculated potential energy versus displacement of Ba indicates that the vibration energy of this atom increases as cage size decreases. Because Ge substitution also affects clathrate structural symmetry, the distance of Ba atom deviation from the center of the cage initially increases and subsequently decreases as the Ge content increases.

  19. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

    International Nuclear Information System (INIS)

    Hart, John; Hazbun, Ramsey; Eldridge, David; Hickey, Ryan; Fernando, Nalin; Adam, Thomas; Zollner, Stefan; Kolodzey, James

    2016-01-01

    Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 °C to 550 °C. For all alloy compositions, the growth rates were much higher compared to using mono-silane and mono-germane. The quality of the material was assessed using X-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry; all indicating high quality epitaxial films with low surface roughness suitable for commercial applications. Studies of the decomposition kinetics with regard to temperature were performed, revealing an unusual growth rate maximum between the high and low temperature deposition regimes. - Highlights: • Higher order precursors tetrasilane and digermane • Low temperature deposition • Thorough film characterization with temperature • Arrhenius growth rate peak

  20. Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

    International Nuclear Information System (INIS)

    Sugawara, Katsutoshi; Sakuraba, Masao; Murota, Junichi

    2010-01-01

    Using an 84% relaxed Ge(100) buffer layer formed on Si(100) by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD), influence of strain upon electrical characteristics of B-doped Si film epitaxially grown on the Ge buffer have been investigated. For the thinner B-doped Si film, surface strain amount is larger than that of the thicker film, for example, strain amount reaches 2.0% for the thickness of 2.2 nm. It is found that the hole mobility is enhanced by the introduction of strain to Si, and the maximum enhancement of about 3 is obtained. This value is higher than that of the usually reported mobility enhancement by strain using Si 1 -x Ge x buffer. Therefore, introduction of strain using relaxed Ge film formed by ECR plasma enhanced CVD is useful to improve future Si-based device performance.

  1. Record power, ultra-broadband supercontinuum source based on highly GeO2 doped silica fiber

    DEFF Research Database (Denmark)

    Jain, Deepak; Sidharthan, R.; Moselund, Peter M.

    2016-01-01

    the potential of germania based photonic crystal fiber or a step-index fiber supercontinuum source for high power ultra-broad band emission being by pumped a 1060 nm or a 1550 nm laser source. To the best of our knowledge, this is the record power, ultra-broadband, and all-fiberized supercontinuum light source...... based on silica and germania fiber ever demonstrated to the date. (C) 2016 Optical Society of America......We demonstrate highly germania doped fibers for mid-infrared supercontinuum generation. Experiments ensure a highest output power of 1.44 W for a broadest spectrum from 700 nm to 3200 nm and 6.4 W for 800 nm to 2700 nm from these fibers, while being pumped by a broadband Erbium-Ytterbium doped...

  2. Explosive mixture of high power and high total energy content, and process for its manufacture

    Energy Technology Data Exchange (ETDEWEB)

    Cook, M.A.; Udy, L.L.

    1973-05-10

    This explosive consists of a viscous suspension of an inorganic oxidizer, finely divided aluminum, water, and a liquid organic material miscible with water; a thickener may also be added. The mixture contains 45 to 55% of a strong inorganic oxidizer, of which at least two-thirds is ammonium nitrate; 32 to 43% aluminum powder; 11 to 18% or liquid, mostly water with an organic water-soluble liquid such as ethylene glycol; and a high temperature resistant, gel-forming thickener made of crosslinked guar gum and not crosslinked xanthane gum made from a polysaccharide through bacterial action.

  3. Effect of High Intensity Ultrasound and Pasteurization on Anthocyanin Content in Strawberry Juice

    Directory of Open Access Journals (Sweden)

    Igor Dubrović

    2011-01-01

    Full Text Available The purpose of this investigation is to study the influence of high intensity ultrasound and pasteurization on the stability of anthocyanins and their content in strawberry juice. Different ultrasound process parameters for the treatment of juices are compared to the classical thermal treatments. For ultrasound treatments, three parameters were varied according to the statistical experimental design. Central composite design was used to optimize and design experimental parameters: temperature (25, 40 and 55 °C, amplitude (60, 90 and 120 μm and time (3, 6, and 9 min. It was found that the anthocyanin content after pasteurization (85 °C for 2 min was reduced by 5.3 to 5.8 % compared to untreated juices. After treatment with ultrasound (20 °C for 3, 6 or 9 min or thermosonication (40 °C for 3, 6 or 9 min and 60 °C for 3 or 6 min, the degradation of anthocyanins was generally less intensive and was 0.7–4.4 % compared to the untreated juices. Only in the case of ultrasonic treatment at a temperature of 55 °C and treatment time of 9 min the total content of anthocyanins, compared to untreated juice, was reduced by 5.8 to 7.1 %, and their degradation was greater than that of pasteurized juices. From the results it can be concluded that total anthocyanin content was greater in more than 85 % of the selected ultrasound treatments compared to pasteurized juices. Ultrasound treatment can replace pasteurization in terms of preserving total anthocyanin content. The modelling approaches using response surface methodology (RSM developed in this study exploit data in order to identify the optimal processing parameters for lowering degradation of anthocyanins in strawberry juice during ultrasound processing.

  4. Effect of alkali metal content of carbon on retention of iodine at high temperatures

    International Nuclear Information System (INIS)

    Evans, A.G.

    1975-01-01

    Activated carbon for filters in reactor confinement systems is intentionally impregnated with iodine salts to enhance the removal of radioiodine from air streams containing organic iodides. When a variety of commercial impregnated carbons were evaluated for iodine retention at elevated temperatures (4 hours at 180 0 C), wide variations in iodine penetration were observed. The alkali metal and iodine content of carbon samples was determined by neutron activation analysis, and a strong correlation was shown between the atom ratio of iodine to alkali metals in the carbons and the high-temperature retention performance. Carbons containing excess alkali (especially potassium) have iodine penetration values 10 to 100 times lower than carbons containing excess iodine. Both low I/K ratios and high pH values were shown essential to high efficiency iodine retention; therefore, conversion of elemental iodine to ionic iodine is the basic reaction mechanism. The natural high K + content and high pH coconut carbons make coconut the preferred natural base material for nuclear air cleaning applications. Studies show, however, that treatment of low potassium carbons with a mixture of KOH and I 2 may produce a product equal to or better than I 2 -impregnated coconut carbons at a lower cost. (U.S.)

  5. Recent advances in quantitative high throughput and high content data analysis.

    Science.gov (United States)

    Moutsatsos, Ioannis K; Parker, Christian N

    2016-01-01

    High throughput screening has become a basic technique with which to explore biological systems. Advances in technology, including increased screening capacity, as well as methods that generate multiparametric readouts, are driving the need for improvements in the analysis of data sets derived from such screens. This article covers the recent advances in the analysis of high throughput screening data sets from arrayed samples, as well as the recent advances in the analysis of cell-by-cell data sets derived from image or flow cytometry application. Screening multiple genomic reagents targeting any given gene creates additional challenges and so methods that prioritize individual gene targets have been developed. The article reviews many of the open source data analysis methods that are now available and which are helping to define a consensus on the best practices to use when analyzing screening data. As data sets become larger, and more complex, the need for easily accessible data analysis tools will continue to grow. The presentation of such complex data sets, to facilitate quality control monitoring and interpretation of the results will require the development of novel visualizations. In addition, advanced statistical and machine learning algorithms that can help identify patterns, correlations and the best features in massive data sets will be required. The ease of use for these tools will be important, as they will need to be used iteratively by laboratory scientists to improve the outcomes of complex analyses.

  6. Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

    Science.gov (United States)

    Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

    2018-01-01

    Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

  7. Leaching of copper concentrates with high arsenic content in chlorine-chloride media

    International Nuclear Information System (INIS)

    Herreros, O.; Fuentes, G.; Quiroz, R.; Vinals, J.

    2003-01-01

    This work reports the results of copper concentrates leaching which have high arsenic concepts (up to 2.5%). The treatments were carried out using chlorine that forms from sodium hypochlorite and sulphuric acid. The aim of this work is to obtain a solution having high copper content 4 to 6 g/l and 5 to 7 g/l free acid in order to submit it directly to a solvent extraction stage. In addition, this solution should have minimum content of arsenic and chloride ions. To carry out this investigation, an acrylic reactor was constructed where the leaching tests were made at constant temperature in a thermostatic bath under atmospheric pressure. The concentrate samples were obtained from mineral processing plants from Antofagasta, Chile. Typical variables were studied, such as leaching agent concentration, leaching time, pulp density and temperature among others. Some of the residues were analyzed by XRD and EPS. On the other hand, the solutions were analyzed by Atomic Absorption Spectroscopy. The results indicate solutions having the contents stated above can be obtained. (Author) 19 refs

  8. Combined high-power ultrasound and high-pressure homogenization nanoemulsification: The effect of energy density, oil content and emulsifier type and content.

    Science.gov (United States)

    Calligaris, Sonia; Plazzotta, Stella; Valoppi, Fabio; Anese, Monica

    2018-05-01

    Combinations of ultrasound (US) and high-pressure homogenization (HPH) at low-medium energy densities were studied as alternative processes to individual US and HPH to produce Tween 80 and whey protein stabilized nanoemulsions, while reducing the energy input. To this aim, preliminary trials were performed to compare emulsification efficacy of single and combined HPH and US treatments delivering low-medium energy densities. Results highlighted the efficacy of US-HPH combined process in reducing the energy required to produce nanoemulsions stabilized with both Tween 80 and whey protein isolate. Subsequently, the effect of emulsifier content (1-3% w/w), oil amount (10-20% w/w) and energy density (47-175 MJ/m 3 ) on emulsion mean particle diameter was evaluated by means of a central composite design. Particles of 140-190 nm were obtained by delivering 175 MJ/m 3 energy density at emulsions containing 3% (w/w) Tween 80 and 10% (w/w) oil. In the case of whey protein isolate stabilized emulsions, a reduced emulsifier amount (1% w/w) and intermediate energy density (120 MJ/m 3 ) allowed a minimum droplet size around 220-250 nm to be achieved. Results showed that, in both cases, at least 50% of the energy density should be delivered by HPH to obtain the minimum particle diameter. Copyright © 2018 Elsevier Ltd. All rights reserved.

  9. Method for evaluating building materials with a high content of radioactivity

    International Nuclear Information System (INIS)

    Stranden, E.

    1979-01-01

    In order to avoid increased radiation doses to the population due to the introduction of building materials with an unusually high content of radioactivity, a method for evaluating building materials has been developed. An expression for the gamma radiation due to radium, thorium and potassium 40 has been proposed by a Scandinavian group. When this value for a given material does not exceed 1, then no restriction is placed. Should it exceed 1, then the material is subjected to further investigation. Similarly, since the radon concentration depends on the radium content, an expression for this is proposed. Should this be less than unity the material may be sold freely. Should it exceed unity, further investigations must be made. Measurements have also been made on the exhalation of radon from concrete, and the results are given. An expression including this exhalation rate and the ventilation rate, giving the radon concentration is given. (JIW)

  10. Application of Titanium Compounds to Reduce Fluoride Ion in Water Resources with High Fluoride Ion Contents

    Directory of Open Access Journals (Sweden)

    Fariborz Riahi

    2005-06-01

    Full Text Available The present work describes studies on the sorption of fluoride ions from water by titanium compounds used in water treatment to reduce fluoride content in water resources. There are different methods of reducing fluoride ion in water, each associated with specific problems such as secondary contamination, environmental contamination, high costs, or the need for primary and secondary treatment. In this study, application of titanium sulfate and Metatitanic acid produced from titanium ore concentrate (ileminite is investigated in the removal of fluoride ion and the possibility of complete purification of fluorine containing wastewater is examined to determine the optimal conditions. Metatitanic acid has a great sorption property for fluoride ion. Also titanium sulfate is a suitable and more effective material for this purpose. Efficiency of this material in reducing fluoride ion content is 99.9% and it is possible to refresh sorbet material for reuse without problems arising from Ti+4 ion contamination.

  11. Synthesis and properties of hydroxy acrylic resin with high solid content

    Science.gov (United States)

    Yu, Zhen; Hu, Mingguang; Cui, Han; Xiao, Jijun

    2017-10-01

    Manufacturers of automotive repair finishes are tending to reduce more and more the level of volatile organic compounds in their paints in order to comply with increasingly strict environmental legislation. A high solid hydroxy acrylic resin was synthesised using CARDURA E10 and a type of hydroxyacrylic acid resin, its' acid value, hydroxylvalue, viscosity, structure, morphology was measured and film-forming properties after curing were characterised. The results show that the addition of CARDURA E10 in the copolymer composition significantly reduced the viscosity of the polymer system, improved the solid content of the resin and the physical properties of the coating. The hydroxyl acrylate resin with solid content of 90% and excellent comprehensive performance were successfully prepared by controlling the initiator dosage, polymerization temperature and monomer ratio.

  12. Status of the GILDA project for the 30 MeV-100 GeV high energy gamma ray astrophysics

    Energy Technology Data Exchange (ETDEWEB)

    Casolino, M.; Sparvoli, R.; Morselli, A.; Picozza, P. [Rome Univ. `Tor Vergata` (Italy)]|[INFN, Rome (Italy); Barbiellini, G. [Trieste Univ. (Italy)]|[INFN, Trieste (Italy); Fuglesang, C. [ESA-EAC, Cologne (Germany); Ozerov, Yu.V.; Zemskov, V.M.; Zverev, V.G.; Galper, A.M. [Moscow Engineering Physics Institute, Moscow (Russian Federation)

    1995-09-01

    High energy gamma-ray astrophysics has greatly developed in the last few years because of the results of EGRET, on the Compton gamma ray observatory. The satellite observations have shown the importance of continuing the investigation of high energy gamma radiation but the emerging of new astrophysical and cosmological problems require for future experiments the realization of telescopes with parameters significatively improved with respect to the previous missions. In a traditional point of view, this is achieved with the increase of the length L of the device and, consequently, the mass of the telescope and satellite (growing as L{sup 3}). Such kinds of experiments are becoming rather expensive and are approaching the maximum value in cost, satellite mass and consuming resources. The telescope project GILDA presented in this paper is based on the use of silicon strip detectors. The silicon technique consents to obtain a much wider solid angle aperture; in this way there is more sensitivity without a growing in the size of the

  13. Status of the GILDA project for the 30 MeV-100 GeV high energy gamma ray astrophysics

    International Nuclear Information System (INIS)

    Casolino, M.; Sparvoli, R.; Morselli, A.; Picozza, P.; Barbiellini, G.; Fuglesang, C.; Ozerov, Yu.V.; Zemskov, V.M.; Zverev, V.G.; Galper, A.M.

    1995-01-01

    High energy gamma-ray astrophysics has greatly developed in the last few years because of the results of EGRET, on the Compton gamma ray observatory. The satellite observations have shown the importance of continuing the investigation of high energy gamma radiation but the emerging of new astrophysical and cosmological problems require for future experiments the realization of telescopes with parameters significatively improved with respect to the previous missions. In a traditional point of view, this is achieved with the increase of the length L of the device and, consequently, the mass of the telescope and satellite (growing as L 3 ). Such kinds of experiments are becoming rather expensive and are approaching the maximum value in cost, satellite mass and consuming resources. The telescope project GILDA presented in this paper is based on the use of silicon strip detectors. The silicon technique consents to obtain a much wider solid angle aperture; in this way there is more sensitivity without a growing in the size of the

  14. Impact of fluorine co-implantation on B deactivation and leakage currents in low and high energy Ge preamorphised p+n shallow junctions

    International Nuclear Information System (INIS)

    Girginoudi, D.; Tsiarapas, C.

    2008-01-01

    The impact of fluorine (F) co-implantation on boron (B) deactivation and B TED, as well as on the I-V characteristics of p + n shallow junctions, have been studied for low (10 keV) and high (70 keV) energy Ge preamorphised (PAI) n-type Si samples, that were annealed at 600 deg. C and 700 deg. C. Transmission electron microscopy revealed the existence of defects and dislocation loops (DLs) in the EOR region. It has been found that F stabilizes the EOR defect population via the increase of EOR defect density and the percentage of the stable DLs. This phenomenon is more pronounced when the preamorphisation is shallow (10 keV Ge energy). SIMS and sheet resistance measurements showed the formation of BICs, which implies B deactivation and increased B TED, especially in the shallow PAI samples and at the 700 deg. C annealing temperature. The role of F on B deactivation is multiplex: in the 70 keV PAI samples, and at 600 deg. C annealing temperature, F forms clusters with B causing further B deactivation. In the case of 700 deg. C annealing temperature, F probably forms fluorine-vacancy (F-V) clusters that trap silicon interstitials (Is), thus reducing the possibility of forming BICs and, therefore, resulting in B re-activation and suppression of B TED. Conversely, in the 10-keV PAI samples, and irrespective of the annealing temperature, F improves significantly the sheet resistance, and we suggest that this is a result of the contribution of two physical mechanisms: in the EOR region, F is trapped into DLs, which release less Is than other types of defects. In the amorphous part of Si, there are probably F-V clusters that trap the Is released from the EOR region. Although F in most cases improves B deactivation, it increases the reverse leakage currents, probably due to the stabilization of the EOR defects. As regards the carrier-transport mechanisms, it has been found that the dominant mechanism is the generation-recombination process under forward bias as well as under

  15. Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

    International Nuclear Information System (INIS)

    Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

    2000-01-01

    The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  16. Microspheres with an ultra high holmium content for brachytherapy of malignancies

    International Nuclear Information System (INIS)

    Lira, Raphael A.; Myamoto, Douglas M.; Souza, Jaime R.; Nascimento, Nanci; Azevedo, Mariangela de Burgos M. de; Osso Junior, Joao A.; Martinelli, Jose R.

    2011-01-01

    The overall objective of this work is to develop biodegradable microspheres intended for internal radiation therapy which provides an improved treatment for hepatic carcinomas. The most studied brachytherapy system employing microspheres made of holmium-biopolymer system is composed by poly(L-lactic acid) (PLLA) and holmium acetylacetonate (HoAcAc). The importance of the holmium high content in the microspheres can be interpreted as follow from a therapeutic standpoint, to achieve an effective use of microspheres loaded with HoAcAc, a high content of holmium is required to yield enough radioactivity with a relatively low amount of microspheres.The usual amounts of holmium that are incorporated in the microspheres composed by poly(L-lactic acid) and HoAcAc are 17.0 ± 0.5% (w/w) of holmium, which corresponds to a loading of about 50% of HoAcAc. Different approaches have been investigated to increase that value. One updated approach towards this direction is the production of microspheres with ultrahigh holmium as matrix using HoAcAc crystals as the sole starting material without the use of biopolymer. Likewise, in the search of microspheres with increased holmium content , it has been demonstrated that by changing the HoAcAc crystal structure by its recrystallization from crystal phase to the amorphous there is lost of acetylacetonate and water molecules causing the increasing of the holmium content. Microspheres were prepared by solvent evaporation, using holmium acetylacetonate (HoAcAc) crystals as the sole ingredient. Microspheres were characterized by using light and scanning electron microscopy, infrared and Raman spectroscopy, differential scanning calorimetry, X-rays diffraction, and confocal laser scanning microscopy. (author)

  17. Microspheres with an ultra high holmium content for brachytherapy of malignancies

    Energy Technology Data Exchange (ETDEWEB)

    Lira, Raphael A.; Myamoto, Douglas M.; Souza, Jaime R.; Nascimento, Nanci; Azevedo, Mariangela de Burgos M. de [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Biotecnologia; Osso Junior, Joao A. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Radiofarmacia; Martinelli, Jose R. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Ciencias e Tecnologia de Materiais

    2011-07-01

    The overall objective of this work is to develop biodegradable microspheres intended for internal radiation therapy which provides an improved treatment for hepatic carcinomas. The most studied brachytherapy system employing microspheres made of holmium-biopolymer system is composed by poly(L-lactic acid) (PLLA) and holmium acetylacetonate (HoAcAc). The importance of the holmium high content in the microspheres can be interpreted as follow from a therapeutic standpoint, to achieve an effective use of microspheres loaded with HoAcAc, a high content of holmium is required to yield enough radioactivity with a relatively low amount of microspheres.The usual amounts of holmium that are incorporated in the microspheres composed by poly(L-lactic acid) and HoAcAc are 17.0 {+-} 0.5% (w/w) of holmium, which corresponds to a loading of about 50% of HoAcAc. Different approaches have been investigated to increase that value. One updated approach towards this direction is the production of microspheres with ultrahigh holmium as matrix using HoAcAc crystals as the sole starting material without the use of biopolymer. Likewise, in the search of microspheres with increased holmium content , it has been demonstrated that by changing the HoAcAc crystal structure by its recrystallization from crystal phase to the amorphous there is lost of acetylacetonate and water molecules causing the increasing of the holmium content. Microspheres were prepared by solvent evaporation, using holmium acetylacetonate (HoAcAc) crystals as the sole ingredient. Microspheres were characterized by using light and scanning electron microscopy, infrared and Raman spectroscopy, differential scanning calorimetry, X-rays diffraction, and confocal laser scanning microscopy. (author)

  18. High Hydrogen Content Graphene Hydride Compounds & High Cross-Section Cladding Coatings for Fast Neutron Detection

    International Nuclear Information System (INIS)

    Chandrashekhar, MVS

    2017-01-01

    The objective is to develop and implement a superior low-cost, large area (potentially >32in), easily deployable, close proximity, harsh environment innovative neutron sensor needed for next generation fuel cycle monitoring. We will exploit recent breakthroughs at the PI's lab on the electrochemistry of epitaxial graphene (EG) formed on commercial SiC wafers, a transformative nanomaterial system with superior radiation detection and durability properties to develop a new paradigm in detection for fast neutrons, a by-product of fission reactors. There are currently few effective detection/monitoring schemes, especially solid-state ones at present. This is essential for monitoring and control of future fuel cycles to make them more efficient and reliable. By exploiting these novel materials, as well as innovative hybrid SiC/EG/Cladding device architectures conceived by the team, will develop low-cost, high performance solutions to fast-neutron detection. Finally, we will also explore 3-terminal device implementations for neutron detectors with built-in electronic gain to further shrink these devices and improve their sensitivity.

  19. Quark-diquark fragmentation in 'high mass' diffraction dissociation in proton-proton collisions at 360 GeV/c

    International Nuclear Information System (INIS)

    Asai, Makoto

    1986-01-01

    Using the European Hybrid spectrometer (EHS) system, we have investigated the properties of the four-prong 'high mass' diffraction dissociation process in the exclusive processes pp → pX, where X represents pπ + π - nπ 0 (n = 0, 1, 2). We present experimental evidences that Pomeron couples with a single valence quark in the incident proton and that the other two valence quarks in the proton behaves as the spectator diquark. We also show that most of the baryons are produced from the spectator diquark system in these processes. The p t suppression is also shown in the Gottfried-Jackson frame, the frame in which the excited system composed of Pomeron and the incident proton is at rest. Characteristic features in the hadronization of this process are very much similar to those of quark-diquark fragmentation in lepton-hardron deep inelastic scattering. (author)

  20. Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal-oxide-semiconductor field effect transistor channels

    Science.gov (United States)

    Grasby, T. J.; Parry, C. P.; Phillips, P. J.; McGregor, B. M.; Morris, , R. J. H.; Braithwaite, G.; Whall, T. E.; Parker, E. H. C.; Hammond, R.; Knights, A. P.; Coleman, P. G.

    1999-03-01

    Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V-1 s-1 for a sheet density of 6.2×1011 cm-2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal-oxide-semiconductor device fabrication.

  1. High content analysis of phagocytic activity and cell morphology with PuntoMorph.

    Science.gov (United States)

    Al-Ali, Hassan; Gao, Han; Dalby-Hansen, Camilla; Peters, Vanessa Ann; Shi, Yan; Brambilla, Roberta

    2017-11-01

    Phagocytosis is essential for maintenance of normal homeostasis and healthy tissue. As such, it is a therapeutic target for a wide range of clinical applications. The development of phenotypic screens targeting phagocytosis has lagged behind, however, due to the difficulties associated with image-based quantification of phagocytic activity. We present a robust algorithm and cell-based assay system for high content analysis of phagocytic activity. The method utilizes fluorescently labeled beads as a phagocytic substrate with defined physical properties. The algorithm employs statistical modeling to determine the mean fluorescence of individual beads within each image, and uses the information to conduct an accurate count of phagocytosed beads. In addition, the algorithm conducts detailed and sophisticated analysis of cellular morphology, making it a standalone tool for high content screening. We tested our assay system using microglial cultures. Our results recapitulated previous findings on the effects of microglial stimulation on cell morphology and phagocytic activity. Moreover, our cell-level analysis revealed that the two phenotypes associated with microglial activation, specifically cell body hypertrophy and increased phagocytic activity, are not highly correlated. This novel finding suggests the two phenotypes may be under the control of distinct signaling pathways. We demonstrate that our assay system outperforms preexisting methods for quantifying phagocytic activity in multiple dimensions including speed, accuracy, and resolution. We provide a framework to facilitate the development of high content assays suitable for drug screening. For convenience, we implemented our algorithm in a standalone software package, PuntoMorph. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. OMASAL MORPHOLOGY OF DAIRY COWS FED WITH HIGH OR LOW GRAIN CONTENT DIET PRIOR PARTURITION

    Directory of Open Access Journals (Sweden)

    Danilo de Oliveira Rocha Bhering Santoro

    2015-12-01

    Full Text Available ABSTRACT Little is known about the morphological response of the omasum in dairy cows that consume a high-energy diet pre-partum. The aim of this study was to investigate whether a transitional diet with high grain content is able to induce changes in omasum morphology. Six weeks before the expected calving, four Holstein cows were fed a standardization diet, and four weeks before delivery, the cows were fed a diet with high grain content (HGC or low (LGC grain content. After calving, all of the cows were fed a high energy lactation diet. The cows that were fed the HGC diet pre-partum had higher dry matter and nutrient intake than the cows that were fed the LGC diet. The mitotic index of the omasum epithelium was higher than the mitotic index in the rumen, but apparently the response to the diet stimuli was slower. In the cows that were fed the HGC diet, the omasum papillae were taller one week before parturition and two weeks post-partum. Cows that were fed the HGC diet had a thinner epithelium due to thinner non-keratinized layers of the omasum epithelium. We conclude that the omasum mucosa of dairy cows responds to the stimuli of a pre-partum HGC diet, which was indicated by the greater height of the omasum papillae and by the reduced thickness of the omasum epithelium. It seems that the mitotic index responds a little more slowly, but the response to the diet stimuli is stronger in the omasum epithelium than in the rumen.

  3. High-content profiling of cell responsiveness to graded substrates based on combinyatorially variant polymers.

    Science.gov (United States)

    Liu, Er; Treiser, Matthew D; Patel, Hiral; Sung, Hak-Joon; Roskov, Kristen E; Kohn, Joachim; Becker, Matthew L; Moghe, Prabhas V

    2009-08-01

    We have developed a novel approach combining high information and high throughput analysis to characterize cell adhesive responses to biomaterial substrates possessing gradients in surface topography. These gradients were fabricated by subjecting thin film blends of tyrosine-derived polycarbonates, i.e. poly(DTE carbonate) and poly(DTO carbonate) to a gradient temperature annealing protocol. Saos-2 cells engineered with a green fluorescent protein (GFP) reporter for farnesylation (GFP-f) were cultured on the gradient substrates to assess the effects of nanoscale surface topology and roughness that arise during the phase separation process on cell attachment and adhesion strength. The high throughput imaging approach allowed us to rapidly identify the "global" and "high content" structure-property relationships between cell adhesion and biomaterial properties such as polymer chemistry and topography. This study found that cell attachment and spreading increased monotonically with DTE content and were significantly elevated at the position with intermediate regions corresponding to the highest "gradient" of surface roughness, while GFP-f farnesylation intensity descriptors were sensitively altered by surface roughness, even in cells with comparable levels of spreading.

  4. Influence of varying Germanium content on the optical function dispersion of Fe{sub 2}MnSi{sub x}Ge{sub 1-x}: An ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Reshak, Ali H., E-mail: maalidph@yahoo.co.uk [School of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); School of Material Engineering, Malaysia University of Perlis, P.O. Box 77, d/a Pejabat Pos Besar, 01007 Kangar, Perlis (Malaysia); Charifi, Z., E-mail: charifizoulikha@gmail.com [Physics Department, Faculty of Science, University of M' sila, 28000 M' sila (Algeria); Baaziz, H. [Physics Department, Faculty of Science, University of M' sila, 28000 M' sila (Algeria)

    2013-01-15

    The optical dielectric functions of Fe{sub 2}MnSi{sub 1-x}Ge{sub x} alloys for selected concentrations (x=0.0, 0.25, 0.5, 0.75 and 1.0) were investigated. The ferromagnetic Fe{sub 2}MnSi{sub x}Ge{sub 1-x} is semiconducting with optical band gaps 0.507, 0.531, 0.539, 0.514 and 0.547 eV for the minority spin and is metallic for the majority spin. From the calculated results the half-metallic character and stability of ferromagnetic state for Fe{sub 2}MnSi{sub x}Ge{sub 1-x} is determined. The total magnetic moment is found to be 3.0{mu}{sub B} for all alloys with the most contribution from Mn local magnetic moments. Iron atoms however exhibit much smaller spin moments, about 10% of the bulk value, and the sp atoms have induced magnetic moments due to the proximity of Fe first nearest neighbors, which couple antiferromagnetically with Fe and Mn spin moments. We have employed full-potential linearized augmented plane wave method based on spin-polarized density functional theory. The generalized gradient approximation exchange-correlation potential was used. The edge of optical absorption for {epsilon}{sub 2}({omega}) of spin-down varies between 0.507 (Fe{sub 2}MnGe) and 0.547 eV (Fe{sub 2}MnSi). Since the spin-up shows metallic nature, the Drude term was included in the spin-up optical dielectric functions. This confirms our finding that these materials are half-metallic. Furthermore, the reflectivity, refractivity and the absorption coefficient were calculated. These results show that the materials possess half-metallic character. - Highlights: Black-Right-Pointing-Pointer The optical dielectric functions of Fe{sub 2}MnSi{sub 1-x}Ge{sub x} were investigated. Black-Right-Pointing-Pointer Fe{sub 2}MnSi{sub x}Ge{sub 1-x} is semiconducting for majority spin and is metallic for minority spin. Black-Right-Pointing-Pointer The total magnetic moment is found to be 3.0{mu}{sub B} for all alloys. Black-Right-Pointing-Pointer The edge of optical absorption for {epsilon}{sub 2

  5. Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Maggioni, G., E-mail: maggioni@lnl.infn.it [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Carturan, S. [Dipartimento di Fisica e Astronomia G. Galilei, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Fiorese, L. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali, Università di Trento, Via Mesiano 77, I-38050 Povo, Trento (Italy); Pinto, N.; Caproli, F. [Scuola di Scienze e Tecnologie, Sezione di Fisica, Università di Camerino, Via Madonna delle Carceri 9, Camerino (Italy); INFN, Sezione di Perugia, Perugia (Italy); Napoli, D.R. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Viale dell’Universita’2, I-35020 Legnaro, Padova (Italy); Giarola, M.; Mariotto, G. [Dipartimento di Informatica—Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy)

    2017-01-30

    Highlights: • A surface passivation method for HPGe radiation detectors is proposed. • Highly insulating GeNx- and GeOxNy-based layers are deposited at room temperature. • Deposition parameters affect composition and electrical properties of the layers. • The improved performance of a GeNx-coated HPGe diode is assessed. - Abstract: This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the deposition parameters, such as deposition rate, substrate bias and atmosphere composition, and the oxygen and nitrogen content in the film matrix. We found that all the films were very poorly crystallized, consisting of very small Ge nitride and oxynitride nanocrystallites, and electrically insulating, with the resistivity changing from three to six orders of magnitude as a function of temperature. A preliminary test of these films as passivation layers was successfully performed by depositing a germanium nitride film on the intrinsic surface of a high-purity germanium (HPGe) diode and measuring the improved performance, in terms of leakage current, with respect to a reference passivated diode. All these interesting results allow us to envisage the application of this coating technology to the surface passivation of germanium-based radiation detectors.

  6. A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation.

    Science.gov (United States)

    Zhou, Xilin; Dong, Weiling; Zhang, Hao; Simpson, Robert E

    2015-06-11

    Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the oxygen doped films. For higher oxygen concentrations the material is found to phase separate into GeO2 and TeO2, which inhibits the technologically useful abrupt change in properties. Increasing the oxygen content in GeTe-O reduces the difference in film thickness and mass density between the amorphous and crystalline states. For oxygen concentrations between 5 and 6 at.%, the amorphous material and the crystalline material have the same density. Above 6 at.% O doping, crystallisation exhibits an anomalous density change, where the volume of the crystalline state is larger than that of the amorphous. The high thermal stability and zero-density change characteristic of Oxygen-incorporated GeTe, is recommended for efficient and low stress phase change memory devices that may operate at elevated temperatures.

  7. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Directory of Open Access Journals (Sweden)

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  8. High-lying Gamow-Teller excited states in the deformed nuclei,76Ge,82Se and N = 20 nuclei in the island of inversion by the Deformed QRPA (DQRPA)

    Science.gov (United States)

    Cheoun, Myung-Ki; Ha, Eunja

    2013-07-01

    With the advent of high analysis technology in detecting the Gamow-Teller (GT) excited states beyond one nucleon emission threshold, the quenching of the GT strength to the Ikeda sum rule (ISR) seems to be recovered by the high-lying (HL) GT states. We address that these HL GT excited states result from the smearing of the Fermi surface by the increase of the chemical potential owing to the deformation within a framework of the deformed quasi-particle random phase approximation (DQRPA). Detailed mechanism leading to the smearing is discussed, and comparisons to the available experimental data on 76Ge,82Se and N = 20 nuclei are shown to explain the strong peaks on the HL GT excited states.

  9. High-lying Gamow-Teller excited states in the deformed nuclei,76Ge,82Se and N = 20 nuclei in the island of inversion by the Deformed QRPA (DQRPA)

    International Nuclear Information System (INIS)

    Cheoun, Myung-Ki; Ha, Eunja

    2013-01-01

    With the advent of high analysis technology in detecting the Gamow-Teller (GT) excited states beyond one nucleon emission threshold, the quenching of the GT strength to the Ikeda sum rule (ISR) seems to be recovered by the high-lying (HL) GT states. We address that these HL GT excited states result from the smearing of the Fermi surface by the increase of the chemical potential owing to the deformation within a framework of the deformed quasi-particle random phase approximation (DQRPA). Detailed mechanism leading to the smearing is discussed, and comparisons to the available experimental data on 76 Ge, 82 Se and N = 20 nuclei are shown to explain the strong peaks on the HL GT excited states

  10. Profiling stem cell states in three-dimensional biomaterial niches using high content image informatics.

    Science.gov (United States)

    Dhaliwal, Anandika; Brenner, Matthew; Wolujewicz, Paul; Zhang, Zheng; Mao, Yong; Batish, Mona; Kohn, Joachim; Moghe, Prabhas V

    2016-11-01

    A predictive framework for the evolution of stem cell biology in 3-D is currently lacking. In this study we propose deep image informatics of the nuclear biology of stem cells to elucidate how 3-D biomaterials steer stem cell lineage phenotypes. The approach is based on high content imaging informatics to capture minute variations in the 3-D spatial organization of splicing factor SC-35 in the nucleoplasm as a marker to classify emergent cell phenotypes of human mesenchymal stem cells (hMSCs). The cells were cultured in varied 3-D culture systems including hydrogels, electrospun mats and salt leached scaffolds. The approach encompasses high resolution 3-D imaging of SC-35 domains and high content image analysis (HCIA) to compute quantitative 3-D nuclear metrics for SC-35 organization in single cells in concert with machine learning approaches to construct a predictive cell-state classification model. Our findings indicate that hMSCs cultured in collagen hydrogels and induced to differentiate into osteogenic or adipogenic lineages could be classified into the three lineages (stem, adipogenic, osteogenic) with ⩾80% precision and sensitivity, within 72h. Using this framework, the augmentation of osteogenesis by scaffold design exerted by porogen leached scaffolds was also profiled within 72h with ∼80% high sensitivity. Furthermore, by employing 3-D SC-35 organizational metrics, differential osteogenesis induced by novel electrospun fibrous polymer mats incorporating decellularized matrix could also be elucidated and predictably modeled at just 3days with high precision. We demonstrate that 3-D SC-35 organizational metrics can be applied to model the stem cell state in 3-D scaffolds. We propose that this methodology can robustly discern minute changes in stem cell states within complex 3-D architectures and map single cell biological readouts that are critical to assessing population level cell heterogeneity. The sustained development and validation of bioactive

  11. Factor analysis in optimization of formulation of high content uniformity tablets containing low dose active substance.

    Science.gov (United States)

    Lukášová, Ivana; Muselík, Jan; Franc, Aleš; Goněc, Roman; Mika, Filip; Vetchý, David

    2017-11-15

    Warfarin is intensively discussed drug with narrow therapeutic range. There have been cases of bleeding attributed to varying content or altered quality of the active substance. Factor analysis is useful for finding suitable technological parameters leading to high content uniformity of tablets containing low amount of active substance. The composition of tabletting blend and technological procedure were set with respect to factor analysis of previously published results. The correctness of set parameters was checked by manufacturing and evaluation of tablets containing 1-10mg of warfarin sodium. The robustness of suggested technology was checked by using "worst case scenario" and statistical evaluation of European Pharmacopoeia (EP) content uniformity limits with respect to Bergum division and process capability index (Cpk). To evaluate the quality of active substance and tablets, dissolution method was developed (water; EP apparatus II; 25rpm), allowing for statistical comparison of dissolution profiles. Obtained results prove the suitability of factor analysis to optimize the composition with respect to batches manufactured previously and thus the use of metaanalysis under industrial conditions is feasible. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. Biodiesel from the seed oil of Treculia africana with high free fatty acid content

    Energy Technology Data Exchange (ETDEWEB)

    Adewuyi, Adewale [Redeemer' s University, Department of Chemical Sciences, Faculty of Natural Sciences, Redemption City, Ogun State (Nigeria); Oderinde, Rotimi A.; Ojo, David F.K. [University of Ibadan, Industrial Unit, Department of Chemistry, Ibadan, Oyo State (Nigeria)

    2012-12-15

    Oil was extracted from the seed of Treculia africana using hexane. The oil was characterized and used in the production of biodiesel. Biodiesel was produced from the seed oil of T. africana using a two-step reaction system. The first step was a pretreatment which involved the use of 2 % sulfuric acid in methanol, and secondly, transesterification reaction using KOH as catalyst. Saponification value of the oil was 201.70 {+-} 0.20 mg KOH/g, free fatty acid was 8.20 {+-} 0.50 %, while iodine value was 118.20 {+-} 0.50 g iodine/100 g. The most dominant fatty acid was C18:2 (44 %). The result of the method applied showed a conversion which has ester content above 98 %, flash point of 131 {+-} 1.30 C, and phosphorus content below 1 ppm in the biodiesel. The biodiesel produced exhibited properties that were in agreement with the European standard (EN 14214). This study showed that the high free fatty acid content of T. africana seed oil can be reduced in a one-step pretreatment of esterification reaction using H{sub 2}SO{sub 4} as catalyst. (orig.)

  13. Thermogravimetric Analysis of Effects of High-Content Limstone Addition on Combustion Characteristics of Taixi Anthracite

    Institute of Scientific and Technical Information of China (English)

    ZHANG Hong; LI Mei; SUN Min; WEI Xian-yong

    2004-01-01

    Combustion characteristics of Taixi anthracite admixed with high content of limestone addition were investigated with thermogravimetric analysis. The results show that limestone addition has a little promoting effect on the ignition of raw coals as a whole. The addition of limestone is found to significantly accelerate the combustion and burnout of raw coals. The higher the sample mass is, the more significant the effect will be. The results also show that the change of limestone proportion between 45%-80% has little effect on ignition temperatures of coal in the blended samples. Increasing limestone content lowers the temperature corresponding to the maximum weight loss. Although higher maximum mass loss rates are observed with higher limestone content, the effect is found not ascribed to changing limestone addition, but to the decrease of absolute coal mass in the sample. The change of limestone proportion has little effect on its burnout temperature. Mechanism analysis indicates that these phenomena result mainly from improved heat conduction due to limestone addition.

  14. Correlation between the mechanical property and microstructure of porcelain with high alumina contents

    International Nuclear Information System (INIS)

    Goulart, E.P.; Jordao, M.A.P.; Souza, D.D.D. de; Kiyohara, P.K.

    1989-01-01

    The substitution of quartz by a alumina in porcelain bodies produces high increase in mechanical strenght of the fired body. In the present paper, body microstruture variations caused by gradual quartz by alumina substitution have been studied and correlated to physical characteristics variations. Several bodies with quartz content varying from 22% to 0% and accordingly, the alumina content varying from 0% to 22% have been prepared. Other quartz-free bodies and the alumina content going up to 40% have been prepared. Three different alumina types have been used: two of them were of microcrystal type, the original crystal size between 1-5μm and obtained by calcining aluminum hydroxide from Bayer process; the third one is an originally macrocrystal type alumina obtained by grinding electrofused material. The sintering temperature ranged from 1250 0 C to 1400 0 C with 50 0 C of intervals between each firing. Tests on specimens covered flexural strenght, water absortion, apparent density and porosity. Microstruture variations and new mineral formation was continuously detected by scanning electron microscopy and X-ray diffraction [pt

  15. FeNbB bulk metallic glass with high boron content

    Energy Technology Data Exchange (ETDEWEB)

    Stoica, M.; Das, Jayanta; Eckert, Juergen [IFW Dresden, Institute for Complex Materials, P.O. Box 270016, D-01171 Dresden (Germany); Hajlaoui, Khalil; Yavari, Alain Reza [LTPCM-CNRS, I.N.P. Grenoble, 1130 Rue de la Piscine, BP 75, F-38402 University Campus (France)

    2007-07-01

    Fe-based alloys able to form magnetic bulk metallic glasses (BMGs) are of the type transition metal - metalloid and often contain 5 or more elements. Usually, the metalloid content is around 20 atomic %. Very recently, the Fe{sub 66}Nb{sub 4}B{sub 30} alloy was found to be able to form BMG by copper mold casting technique, despite its high metalloid content. Several composition with boron contents around 30 at. % or even higher were calculated since 1993 as possible compositions of the remaining amorphous matrix after the first stage of nanocrystallization of Finemet-type Fe{sub 77}Si{sub 14}B{sub 9} glassy ribbons with 0.5 to 1 atomic % Cu and a few percent Nb addition. Melt-spun ribbons of all calculated compositions were found to be glassy. The composition of the ternary Fe-based BMG investigated in the present study resulted as an optimization of all possibilities. The alloy is ferromagnetic with glass transition temperature T{sub g}=845 K, crystallisation temperature T{sub x}=876 K, liquidus temperature T{sub liq}=1451 K and mechanical strength of 4 GPa. The coercivity of as-cast samples is very low, around 1.5 A/m. The present contribution aims at discussing the thermal stability, mechanical and magnetic properties of the Fe{sub 66}Nb{sub 4}B{sub 30} BMG.

  16. Mutational breeding and genetic engineering in the development of high grain protein content.

    Science.gov (United States)

    Wenefrida, Ida; Utomo, Herry S; Linscombe, Steve D

    2013-12-04

    Cereals are the most important crops in the world for both human consumption and animal feed. Improving their nutritional values, such as high protein content, will have significant implications, from establishing healthy lifestyles to helping remediate malnutrition problems worldwide. Besides providing a source of carbohydrate, grain is also a natural source of dietary fiber, vitamins, minerals, specific oils, and other disease-fighting phytocompounds. Even though cereal grains contain relatively little protein compared to legume seeds, they provide protein for the nutrition of humans and livestock that is about 3 times that of legumes. Most cereal seeds lack a few essential amino acids; therefore, they have imbalanced amino acid profiles. Lysine (Lys), threonine (Thr), methionine (Met), and tryptophan (Trp) are among the most critical and are a limiting factor in many grain crops for human nutrition. Tremendous research has been put into the efforts to improve these essential amino acids. Development of high protein content can be outlined in four different approaches through manipulating seed protein bodies, modulating certain biosynthetic pathways to overproduce essential and limiting amino acids, increasing nitrogen relocation to the grain through the introduction of transgenes, and exploiting new genetic variance. Various technologies have been employed to improve protein content including conventional and mutational breeding, genetic engineering, marker-assisted selection, and genomic analysis. Each approach involves a combination of these technologies. Advancements in nutrigenomics and nutrigenetics continue to improve public knowledge at a rapid pace on the importance of specific aspects of food nutrition for optimum fitness and health. An understanding of the molecular basis for human health and genetic predisposition to certain diseases through human genomes enables individuals to personalize their nutritional requirements. It is critically important

  17. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    DEFF Research Database (Denmark)

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.

    2012-01-01

    to the introduction of dislocations, due to the increase in the strain of the Ge1-xSnx layers. We achieved the growth of a fully strained Ge0.922Sn0.078 layer on Ge with a Ga concentration of 5.5×1019 /cm3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge1-xSnx layer decreased as the Sn...... content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge1-xSnx epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge0.950Sn0.050 layer annealed at 600°C...

  18. Depth-resolved incoherent and coherent wide-field high-content imaging (Conference Presentation)

    Science.gov (United States)

    So, Peter T.

    2016-03-01

    Recent advances in depth-resolved wide-field imaging technique has enabled many high throughput applications in biology and medicine. Depth resolved imaging of incoherent signals can be readily accomplished with structured light illumination or nonlinear temporal focusing. The integration of these high throughput systems with novel spectroscopic resolving elements further enable high-content information extraction. We will introduce a novel near common-path interferometer and demonstrate its uses in toxicology and cancer biology applications. The extension of incoherent depth-resolved wide-field imaging to coherent modality is non-trivial. Here, we will cover recent advances in wide-field 3D resolved mapping of refractive index, absorbance, and vibronic components in biological specimens.

  19. Influence of molybdenum content on transformation behavior of high performance bridge steel during continuous cooling

    International Nuclear Information System (INIS)

    Chen, Jun; Tang, Shuai; Liu, Zhenyu; Wang, Guodong

    2013-01-01

    Highlights: ► The bainite transformation field was refined. ► The empirical equation to estimate the GF s was established. ► Transformation behavior was studied with serially increasing Mo addition. ► The molybdenum content can be lowered as the cooling rate is increased. ► GF transformation field is also shifted to right by increasing Mo content. - Abstract: The continuous-cooling-transformation (CCT) diagrams of high performance bridge steel with different molybdenum content were plotted by means of a combined method of dilatometry and metallography. The results show that the molybdenum addition of 0.17 wt% does not noticeably alter the transformation behavior, whereas 0.38 wt% significantly. In addition, the molybdenum addition of 0.38 wt% completely eliminates the formation of polygonal ferrite (PF) and significantly lower the granular ferrite (GF) transformation starting temperatures throughout the range of cooling rates studied. At lower cooling rates, with the increase of the molybdenum content, the martensite/austenite (M/A) constituents are noticeably refined, whereas the effects are not obvious at higher cooling rates. Moreover, the molybdenum addition of 0.38 wt% can significantly increase the Vickers hardness, but the Vickers hardness increments (by comparison of Mo-0.17wt% steel and Mo-0.38wt% steel) are sharply reduced at the cooling rate of 30 °C/s, indicating that at higher cooling rate, the molybdenum usage can be saved and the higher strengthen can be also gained. It could be found the GF transformation starting temperature is linear with the cooling rate. The empirical equation was established to calculate GF transformation starting temperatures, and the calculated values are in good agreement with measured ones

  20. Fructose content in popular beverages made with and without high-fructose corn syrup.

    Science.gov (United States)

    Walker, Ryan W; Dumke, Kelly A; Goran, Michael I

    2014-01-01

    Excess fructose consumption is hypothesized to be associated with risk for metabolic disease. Actual fructose consumption levels are difficult to estimate because of the unlabeled quantity of fructose in beverages. The aims of this study were threefold: 1) re-examine the fructose content in previously tested beverages using two additional assay methods capable of detecting other sugars, especially maltose, 2) compare data across all methods to determine the actual free fructose-to-glucose ratio in beverages made either with or without high-fructose corn syrup (HFCS), and 3) expand the analysis to determine fructose content in commonly consumed juice products. Sugar-sweetened beverages (SSBs) and fruit juice drinks that were either made with or without HFCS were analyzed in separate, independent laboratories via three different methods to determine sugar profiles. For SSBs, the three independent laboratory methods showed consistent and reproducible results. In SSBs made with HFCS, fructose constituted 60.6% ± 2.7% of sugar content. In juices sweetened with HFCS, fructose accounted for 52.1% ± 5.9% of sugar content, although in some juices made from 100% fruit, fructose concentration reached 65.35 g/L accounting for 67% of sugars. Our results provide evidence of higher than expected amounts of free fructose in some beverages. Popular beverages made with HFCS have a fructose-to-glucose ratio of approximately 60:40, and thus contain 50% more fructose than glucose. Some pure fruit juices have twice as much fructose as glucose. These findings suggest that beverages made with HFCS and some juices have a sugar profile very different than sucrose, in which amounts of fructose and glucose are equivalent. Current dietary analyses may underestimate actual fructose consumption. Copyright © 2014 The Authors. Published by Elsevier Inc. All rights reserved.

  1. Electrochemical treatment of organic wastewater with high salt content. Ko enbun yuki haisui no denkai shori

    Energy Technology Data Exchange (ETDEWEB)

    Wada, Hideo; Kitamura, Takao; Kato, Shunsaku; Oyashiki, Satoru (Goverment Industrial Research Inst. Shikoku, Takamatsu, (Japan) Toyo Engineering Work Ltd., Tokyo, (Japan))

    1990-01-31

    Wastewater containing organic pollutants is generally treated by the biological methods like the activated sludge process, etc. But these biological methods are not necessarily applied to the wastewater with high salt content generated at pickles making plants, etc.. In this report, with the objective of application of the electrolytic oxidation treatment to the organic wastewater with high salt content of pickles making plants, the effects of such conditions as pH, temperature and current, etc. on the treatment rate and treatment efficiency were examined, furthermore, the treatment process was simulated on the basis of a simple reaction model, and its simulation results were compared for study with the experimental results. The results are shown below: No effect of pH was observed, hence no pH control is required; The higher temperature of the wastewater accelerates the treatment rate; It was considered that in high temperature, a loss due to autolysis of hypochlorous acid increases, but the current efficiency of generating hypochlorous acid increases too and since the latter effect is bigger, the above phenomenon occurs. The current has a small effect on the treatment efficiency. With the simple reaction model, the change of residual chlorine concentration, etc. with time can be reproduced semiquantitatively. 7 refs., 6 figs.

  2. Silica removal in industrial effluents with high silica content and low hardness.

    Science.gov (United States)

    Latour, Isabel; Miranda, Ruben; Blanco, Angeles

    2014-01-01

    High silica content of de-inked paper mill effluents is limiting their regeneration and reuse after membrane treatments such as reverse osmosis (RO). Silica removal during softening processes is a common treatment; however, the effluent from the paper mill studied has a low hardness content, which makes the addition of magnesium compounds necessary to increase silica removal. Two soluble magnesium compounds (MgCl₂∙6H₂O and MgSO₄∙7H₂O) were tested at five dosages (250-1,500 mg/L) and different initial pH values. High removal rates (80-90%) were obtained with both products at the highest pH tested (11.5). With these removal efficiencies, it is possible to work at high RO recoveries (75-85%) without silica scaling. Although pH regulation significantly increased the conductivity of the waters (at pH 11.5 from 2.1 to 3.7-4.0 mS/cm), this could be partially solved by using Ca(OH)₂ instead of NaOH as pH regulator (final conductivity around 3.0 mS/cm). Maximum chemical oxygen demand (COD) removal obtained with caustic soda was lower than with lime (15 vs. 30%). Additionally, the combined use of a polyaluminum coagulant during the softening process was studied; the coagulant, however, did not significantly improve silica removal, obtaining a maximum increase of only 10%.

  3. Automated analysis of high-content microscopy data with deep learning.

    Science.gov (United States)

    Kraus, Oren Z; Grys, Ben T; Ba, Jimmy; Chong, Yolanda; Frey, Brendan J; Boone, Charles; Andrews, Brenda J

    2017-04-18

    Existing computational pipelines for quantitative analysis of high-content microscopy data rely on traditional machine learning approaches that fail to accurately classify more than a single dataset without substantial tuning and training, requiring extensive analysis. Here, we demonstrate that the application of deep learning to biological image data can overcome the pitfalls associated with conventional machine learning classifiers. Using a deep convolutional neural network (DeepLoc) to analyze yeast cell images, we show improved performance over traditional approaches in the automated classification of protein subcellular localization. We also demonstrate the ability of DeepLoc to classify highly divergent image sets, including images of pheromone-arrested cells with abnormal cellular morphology, as well as images generated in different genetic backgrounds and in different laboratories. We offer an open-source implementation that enables updating DeepLoc on new microscopy datasets. This study highlights deep learning as an important tool for the expedited analysis of high-content microscopy data. © 2017 The Authors. Published under the terms of the CC BY 4.0 license.

  4. Hot forging of roll-cast high aluminum content magnesium alloys

    Science.gov (United States)

    Kishi, Tomohiro; Watari, Hisaki; Suzuki, Mayumi; Haga, Toshio

    2017-10-01

    This paper reports on hot forging of high aluminum content magnesium alloy sheets manufactured using horizontal twin-roll casting. AZ111 and AZ131 were applied for twin-roll casting, and a hot-forging test was performed to manufacture high-strength magnesium alloy components economically. For twin-roll casting, the casting conditions of a thick sheet for hot forging were investigated. It was found that twin-roll casting of a 10mm-thick magnesium alloy sheet was possible at a roll speed of 2.5m/min. The grain size of the cast strip was 50 to 70µm. In the hot-forging test, blank material was obtained from as-cast strip. A servo press machine with a servo die cushion was used to investigate appropriate forging conditions (e.g., temperature, forging load, and back pressure) for twin-roll casts (TRCs) AZ111 and AZ131. It was determined that high aluminum content magnesium alloy sheets manufactured using twin-roll casting could be forged with a forging load of 150t and a back pressure of 3t at 420 to 430°C. Applying back pressure during hot forging effectively forged a pin-shaped product.

  5. Determination of limonin and nomilin contents in different citrus cultivars using high performance liquid chromatography

    International Nuclear Information System (INIS)

    Bilal, H.; Hassan, S.; Sahar, S.; Akram, W.; Sahar, S.

    2013-01-01

    High perlorrnance liquid chromatography (HPLC) analysis was done to quantify the amount of limonoids (nomilin and nomilin) in seven selected citrus cultivars. According to the HPLC analysis red blood orange (Citrus sinensis var red blood orange) had maximum amount of limonin (479.77 ug/rnl.), while rough lemon (Citrus jambhiri) had no limonin content. in case of nomonin, rough lemon (Citrus jambhir) had maximum amount of nomilin (54.23 micro g/ML)) while succari (citrus sinensis var succari) had very low amount of nomilin (0.37 micro g/Ml). (author)

  6. Autoclave-hardening slag-alkali binder with high water content

    International Nuclear Information System (INIS)

    Korenevskij, V.V.; Kozyrin, N.A.; Melikhova, N.I.; Narkevich, N.K.; Ryabov, G.G.

    1987-01-01

    The results of investigations into properties of slag-alkali binder, that may be used for concretes of reactor radiation and thermal shieldings, are presented. These concretes have increased chemical stability and mechanical strength, high content of chemically bound water (approximately 14%), that is not lost under heating up to 550 deg C. Dumping and granulated slags of blast-furnace process, sodium-bicarbonate-alkali fusion cake formed at burning of adipic acid residues, technical sodium hydroxide and sodium liquid glass are used as raw material for slag-alkali binder

  7. Robust, Reliable Low Emission Gas Turbine Combustion of High Hydrogen Content Fuels

    Energy Technology Data Exchange (ETDEWEB)

    Wooldridge, Margaret Stacy [Univ. of Michigan, Ann Arbor, MI (United States); Im, Hong Geum [Univ. of Michigan, Ann Arbor, MI (United States)

    2016-12-16

    The effects of high hydrogen content fuels were studied using experimental, computational and theoretical approaches to understand the effects of mixture and state conditions on the ignition behavior of the fuels. A rapid compression facility (RCF) was used to measure the ignition delay time of hydrogen and carbon monoxide mixtures. The data were combined with results of previous studies to develop ignition regime criteria. Analytical theory and direct numerical simulation were used to validate and interpret the RCF ignition data. Based on the integrated information the ignition regime criteria were extended to non-dimensional metrics which enable application of the results to practical gas turbine combustion systems.

  8. Porous glass with high silica content for nuclear waste storage : preparation, characterization and leaching

    International Nuclear Information System (INIS)

    Aegerter, M.A.; Santos, D.I. dos; Ventura, P.C.S.

    1984-01-01

    Aqueous solutions simulating radioactive nuclear wastes (like Savanah River Laboratory) were incorporated in porous glass matrix with high silica content prepared by decomposition of borosilicate glass like Na 2 O - B 2 O 3 - SiO 2 . After sintering, the samples were submitted, during 28 days, to standard leaching tests MCC1, MCC5 (Soxhlet) and stagnating. The total weight loss, ph, as well as the integral and differential leaching rates and the accumulated concentrations in the leach of Si, Na, B, Ca, Mn, Al, Fe and Ni. The results are compared with the results from reference borosilicate glass, made by fusion, ceramic, synroc, concrets, etc... (E.G.) [pt

  9. Multiwire proportional chambers in the triggering system of the streamer chamber for high-Pt charged particle production detection in 40 GeV/c hadron-nucleus interactions

    International Nuclear Information System (INIS)

    Czyrkowski, H.; Dabrowski, R.; Derlicki, A.

    1985-01-01

    We describe a triggering system based on the multiwire proportional chambers (MWPCs) for the high-P t charged particles selection in Π - A interactions at 40 GeV/c (RISC experiment). The coincidence matrices processing only combinations of hits in MWPCs allow one to reach sufficient purity of experimental material. The large area MWPCs work close to the streamer chamber high voltage electrode without any problems. Details of the fabrication procedure and peformances are also given. 12 refs. (author)

  10. Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

    Science.gov (United States)

    Fischer, A. M.; Wei, Y. O.; Ponce, F. A.; Moseley, M.; Gunning, B.; Doolittle, W. A.

    2013-09-01

    We have studied the properties of thick InxGa1-xN films, with indium content ranging from x ˜ 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x ˜ 0.6. Surprisingly, the InxGa1-xN film with x ˜ 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (˜400 °C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions.

  11. Analysis of 440 GeV proton beam-matter interaction experiments at the High Radiation Materials test facility at CERN

    Science.gov (United States)

    Burkart, F.; Schmidt, R.; Raginel, V.; Wollmann, D.; Tahir, N. A.; Shutov, A.; Piriz, A. R.

    2015-08-01

    In a previous paper [Schmidt et al., Phys. Plasmas 21, 080701 (2014)], we presented the first results on beam-matter interaction experiments that were carried out at the High Radiation Materials test facility at CERN. In these experiments, extended cylindrical targets of solid copper were irradiated with beam of 440 GeV protons delivered by the Super Proton Synchrotron (SPS). The beam comprised of a large number of high intensity proton bunches, each bunch having a length of 0.5 ns with a 50 ns gap between two neighboring bunches, while the length of this entire bunch train was about 7 μs. These experiments established the existence of the hydrodynamic tunneling phenomenon the first time. Detailed numerical simulations of these experiments were also carried out which were reported in detail in another paper [Tahir et al., Phys. Rev. E 90, 063112 (2014)]. Excellent agreement was found between the experimental measurements and the simulation results that validate our previous simulations done using the Large Hadron Collider (LHC) beam of 7 TeV protons [Tahir et al., Phys. Rev. Spec. Top.--Accel. Beams 15, 051003 (2012)]. According to these simulations, the range of the full LHC proton beam and the hadronic shower can be increased by more than an order of magnitude due to the hydrodynamic tunneling, compared to that of a single proton. This effect is of considerable importance for the design of machine protection system for hadron accelerators such as SPS, LHC, and Future Circular Collider. Recently, using metal cutting technology, the targets used in these experiments have been dissected into finer pieces for visual and microscopic inspection in order to establish the precise penetration depth of the protons and the corresponding hadronic shower. This, we believe will be helpful in studying the very important phenomenon of hydrodynamic tunneling in a more quantitative manner. The details of this experimental work together with a comparison with the numerical

  12. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    OpenAIRE

    Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

    2016-01-01

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...

  13. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  14. Experiences of High School Students about the Predictors of Tobacco Use: a Directed Qualitative Content Analysis

    Directory of Open Access Journals (Sweden)

    Mahmoud Ghasemi

    2015-12-01

    Full Text Available Background and Objectives: Tobacco use is one of the most important risk factors that increases the burden of diseases worldwide. Based on the increasing speed of tobacco use, the aim of the present study was to explain the experiences of high school students about the determiners of use and non-use of tobacco (cigarettes and hookah based on the theory of protection motivation. Materials and Methods: The present study is a qualitative study based on content analysis that has been carried out for five months from 22, November of 2014 to 20, April of 2015 on male high schools in Noshahr. Data were collected in the form of semi-structured interviews from 21 male high school students of whom 7 smoked cigarettes, 7 used hookah and 7 of them did not use any type of tobacco. Data analysis was carried out through the use of directed qualitative content analysis. Results: Data analysis led to the extraction of 99 primary codes that were categorized into 9 predetermined levels of protection motivation theory including perceived sensitivity, perceived intensity, fear, perceived self-efficacy, response expense, efficiency of the perceived answer, external perceived reward, internal perceived reward, protection motivation. The findings of the study showed that the most important predictors for the use of tobacco were the structures of response expense and high perceived rewards and the most important predictors for non-use of tobacco were perceived sensitivity, perceived intensity and high self-efficacy of students. Conclusions: the findings of the present study showed that the pressure from peers, being present in a group using tobacco and the absence of alternative recreational activities are among the most important factors of using tobacco. So, it is suggested that planners of the health department take the comprehensive interventions to improve effective individual and environmental factors of using tobacco so that they could reduce smoking cigarettes

  15. Production of charged pions at high transverse momentum in pp collisions at √s = 45 and 62 GeV

    International Nuclear Information System (INIS)

    Breakstone, A.; Crawley, H.B.; Firestone, A.; Gorbics, M.; Lamsa, J.W.; Meyer, W.T.; Buchanan, C.D.; Drijard, D.; Fabbri, F.; Fischer, H.G.; Frehse, H.; Geist, W.; Heiden, M.; Innocenti, P.G.; Mornacchi, G.; Spahn, J.; Ullaland, O.; Doroba, K.; Gokieli, R.; Sosnowski, R.; Hanke, P.; Herr, W.; Kluge, E.E.; Nakada, T.; Putzer, A.; Lohse, T.; Panter, M.; Rauschnabel, K.; Szczekowski, M.; Wegener, D.

    1984-01-01

    We report on measurements of charged pion production cross sections at theta approx.= 50 0 , psub(T) approx.= 3-9 GeV/c and √s = 45 GeV, taken with the Split Field Magnet Detector at the CERN Intersecting Storage Rings (ISR). Together with previous data at √s = 62 GeV, this allows the calculation of the exponent n assuming a power law dependence psup(n)sub(T). Values of n approx.= 8 are found at low xsub(T) = 2psub(T)/√s which drop to about 7 at xsub(T) approx.= 0.3. The measured values of π + /π - rise with xsub(T) and approach approx.= 2 at xsub(T) approx.= 0.3. A first-order QCD calculation is reasonably consistent with the data. (orig.)

  16. Evaluation of bio-materials’ rejuvenating effect on binders for high-reclaimed asphalt content mixtures

    Directory of Open Access Journals (Sweden)

    A. Jiménez del Barco-Carrión

    2017-07-01

    Full Text Available The interest in using bio-materials in pavement engineering has grown significantly over the last decades due to environmental concerns about the use of non-recoverable natural resources. In this paper, bio-materials are used together with Reclaimed Asphalt (RA to restore some of the properties of the aged bitumen present in mixtures with high RA content. For this purpose, two bio-materials are studied and compared to conventional and polymer modified bitumens. Blends of these materials with RA bitumen were produced and studied to simulate a 50% RA mixture. The rejuvenating effect of the two bio-materials on RA has been assessed and compared with the effect of the conventional binders. Apparent Molecular Weight Distribution of the samples (obtained by the ?-method and different rheological parameters were used for this purpose. Results revealed the power of bio-materials to rejuvenate RA bitumen, showing their capability to be used as fresh binders in high-RA content mixtures.

  17. Glassy slags as novel waste forms for remediating mixed wastes with high metal contents

    International Nuclear Information System (INIS)

    Feng, X.; Wronkiewicz, D.J.; Bates, J.K.; Brown, N.R.; Buck, E.C.; Gong, M.; Ebert, W.L.

    1994-01-01

    Argonne National Laboratory (ANL) is developing a glassy slag final waste form for the remediation of low-level radioactive and mixed wastes with high metal contents. This waste form is composed of various crystalline and metal oxide phases embedded in a silicate glass phase. This work indicates that glassy slag shows promise as final waste form because (1) it has similar or better chemical durability than high-level nuclear waste (HLW) glasses, (2) it can incorporate large amounts of metal wastes, (3) it can incorporate waste streams having low contents of flux components (boron and alkalis), (4) it has less stringent processing requirements (e.g., viscosity and electric conductivity) than glass waste forms, (5) its production can require little or no purchased additives, which can result in greater reduction in waste volume and overall treatment costs. By using glassy slag waste forms, minimum additive waste stabilization approach can be applied to a much wider range of waste streams than those amenable only to glass waste forms

  18. A Liposomal Formulation Able to Incorporate a High Content of Paclitaxel and Exert Promising Anticancer Effect

    Directory of Open Access Journals (Sweden)

    Pei Kan

    2011-01-01

    Full Text Available A liposome formulation for paclitaxel was developed in this study. The liposomes, composed of naturally unsaturated and hydrogenated phosphatidylcholines, with significant phase transition temperature difference, were prepared and characterized. The liposomes exhibited a high content of paclitaxel, which was incorporated within the segregated microdomains coexisting on phospholipid bilayer of liposomes. As much as 15% paclitaxel to phospholipid molar ratio were attained without precipitates observed during preparation. In addition, the liposomes remained stable in liquid form at 4∘C for at least 6 months. The special composition of liposomal membrane which could reduce paclitaxel aggregation could account for such a capacity and stability. The cytotoxicity of prepared paclitaxel liposomes on the colon cancer C-26 cell culture was comparable to Taxol. Acute toxicity test revealed that LD50 for intravenous bolus injection in mice exceeded by 40 mg/kg. In antitumor efficacy study, the prepared liposomal paclitaxel demonstrated the increase in the efficacy against human cancer in animal model. Taken together, the novel formulated liposomes can incorporate high content of paclitaxel, remaining stable for long-term storage. These animal data also demonstrate that the liposomal paclitaxel is promising for further clinical use.

  19. Corrosion Behavior of the Stressed Sensitized Austenitic Stainless Steels of High Nitrogen Content in Seawater

    Directory of Open Access Journals (Sweden)

    A. Almubarak

    2013-01-01

    Full Text Available The purpose of this paper is to study the effect of high nitrogen content on corrosion behavior of austenitic stainless steels in seawater under severe conditions such as tensile stresses and existence of sensitization in the structure. A constant tensile stress has been applied to sensitized specimens types 304, 316L, 304LN, 304NH, and 316NH stainless steels. Microstructure investigation revealed various degrees of stress corrosion cracking. SCC was severe in type 304, moderate in types 316L and 304LN, and very slight in types 304NH and 316NH. The electrochemical polarization curves showed an obvious second current peak for the sensitized alloys which indicated the existence of second phase in the structure and the presence of intergranular stress corrosion cracking. EPR test provided a rapid and efficient nondestructive testing method for showing passivity, degree of sensitization and determining IGSCC for stainless steels in seawater. A significant conclusion was obtained that austenitic stainless steels of high nitrogen content corrode at a much slower rate increase pitting resistance and offer an excellent resistance to stress corrosion cracking in seawater.

  20. Evaluation of bio-materials’ rejuvenating effect on binders for high-reclaimed asphalt content mixtures

    International Nuclear Information System (INIS)

    Jiménez del Barco-Carrión, A.; Pérez-Martínez, M.; Themeli, A.; Lo Presti, D.; Marsac, P.; Pouget, S.; Hammoum, F.; Chailleux, E.; Airey, G.D.

    2017-01-01

    The interest in using bio-materials in pavement engineering has grown significantly over the last decades due to environmental concerns about the use of non-recoverable natural resources. In this paper, bio-materials are used together with Reclaimed Asphalt (RA) to restore some of the properties of the aged bitumen present in mixtures with high RA content. For this purpose, two bio-materials are studied and compared to conventional and polymer modified bitumens. Blends of these materials with RA bitumen were produced and studied to simulate a 50% RA mixture. The rejuvenating effect of the two bio-materials on RA has been assessed and compared with the effect of the conventional binders. Apparent Molecular Weight Distribution of the samples (obtained by the ?-method) and different rheological parameters were used for this purpose. Results revealed the power of bio-materials to rejuvenate RA bitumen, showing their capability to be used as fresh binders in high-RA content mixtures. [es

  1. High-content analysis of single cells directly assembled on CMOS sensor based on color imaging.

    Science.gov (United States)

    Tanaka, Tsuyoshi; Saeki, Tatsuya; Sunaga, Yoshihiko; Matsunaga, Tadashi

    2010-12-15

    A complementary metal oxide semiconductor (CMOS) image sensor was applied to high-content analysis of single cells which were assembled closely or directly onto the CMOS sensor surface. The direct assembling of cell groups on CMOS sensor surface allows large-field (6.66 mm×5.32 mm in entire active area of CMOS sensor) imaging within a second. Trypan blue-stained and non-stained cells in the same field area on the CMOS sensor were successfully distinguished as white- and blue-colored images under white LED light irradiation. Furthermore, the chemiluminescent signals of each cell were successfully visualized as blue-colored images on CMOS sensor only when HeLa cells were placed directly on the micro-lens array of the CMOS sensor. Our proposed approach will be a promising technique for real-time and high-content analysis of single cells in a large-field area based on color imaging. Copyright © 2010 Elsevier B.V. All rights reserved.

  2. BioSig3D: High Content Screening of Three-Dimensional Cell Culture Models.

    Directory of Open Access Journals (Sweden)

    Cemal Cagatay Bilgin

    Full Text Available BioSig3D is a computational platform for high-content screening of three-dimensional (3D cell culture models that are imaged in full 3D volume. It provides an end-to-end solution for designing high content screening assays, based on colony organization that is derived from segmentation of nuclei in each colony. BioSig3D also enables visualization of raw and processed 3D volumetric data for quality control, and integrates advanced bioinformatics analysis. The system consists of multiple computational and annotation modules that are coupled together with a strong use of controlled vocabularies to reduce ambiguities between different users. It is a web-based system that allows users to: design an experiment by defining experimental variables, upload a large set of volumetric images into the system, analyze and visualize the dataset, and either display computed indices as a heatmap, or phenotypic subtypes for heterogeneity analysis, or download computed indices for statistical analysis or integrative biology. BioSig3D has been used to profile baseline colony formations with two experiments: (i morphogenesis of a panel of human mammary epithelial cell lines (HMEC, and (ii heterogeneity in colony formation using an immortalized non-transformed cell line. These experiments reveal intrinsic growth properties of well-characterized cell lines that are routinely used for biological studies. BioSig3D is being released with seed datasets and video-based documentation.

  3. Preparation and analysis of superconducting Nb-Ge films

    International Nuclear Information System (INIS)

    Testardi, L.R.; Meek, R.L.; Poate, J.M.; Royer, W.A.; Storm, A.R.; Wernick, J.H.

    1975-01-01

    The dependences of T/subc/, resistivity, resistance ratio, and structure on chemical composition and sputtering conditions for Nb-Ge films have been studied. The chemical composition, impurity content, and x-ray structure were obtained using Rutherford backscattering, nuclear techniques, and x-ray diffraction. Although T/subc/ varies with composition, it is not found to be critically dependent upon exact stoichiometry; the Nb/Ge ratios vary by approx. 13% (2.6 to 3) for films with approx. 23-K onsets and by approx. 40% (2.2 to 3.3) for films with approx. 20-K onsets. For compositions similar to the bulk, the films have comparitively much higher T/subc/'s and smaller lattice parameters. X-ray results show the films to contain predominately A-15 phase (except for Nb/Ge less-than or equal to 2.5) with lattice parameters varying from 5.15 A for Nb-rich low-T/subc/ films to 5.12 A for Ge-rich films. Several percent of oxygen and carbon occur in low-T/subc/ amorphous films deposited at 650 degreeC but this is considerably reduced in high-T/subc/ films made simultaneously at approx. 750 degreeC. No argon was found and the nitrogen content was generally less than 1%. No correlation of high T/subc/'s and impurities was found. The optimum deposition temperature and resistivity are lowest, and the resistance ratio highest for Nb/Ge ratios somewhat below 3/1. A simple correlation of T/subc/ and resistance ratio is reported which is largely independent of all sputtering conditions and composition and which suggests that slightly higher T/subc/'s may be possible. Negative bias was found to be detrimental to T/subc/ while positive bias had relatively little effect. Magnetic-field-assisted sputtering led to significant increases in the sputtering rate and the optimum deposition temperature

  4. Preparation and investigation of GaxGe25As15Se60-x (x = 1 ÷ 5) glasses

    Science.gov (United States)

    Shiryaev, V. S.; Karaksina, E. V.; Velmuzhov, A. P.; Sukhanov, M. V.; Kotereva, T. V.; Plekhovich, A. D.; Churbanov, M. F.; Filatov, A. I.

    2017-05-01

    Chalcogenide glasses of GaxGe25As15Se60-x (x = 0; 1; 2; 3; 4; 5) compositions are prepared; their transmission range, optical band gap energy, thermal properties and stability against crystallization are studied. It is shown that these glasses have a high transparency in the mid-IR region (from 0.8 to 15 μm), a high glass transition temperature (≥320 °C) and a low tendency to crystallize. The optical band gap energy of GaxGe25As15Se60-x (x = 0; 1; 2; 3; 4; 5) glasses decreases from 1.68 to 1.43 eV as the gallium content increases and the selenium decreases. Their glass network, according to IR spectroscopy data, consists of Ge(Se1/2)4 tetrahedrons and AsSe3/2 pyramids. The Ga2Ge25As15Se58 and Ga3Ge25As15Se57 glasses have highest stability against crystallization. The content of hydrogen and oxygen impurities in the purest glass samples, fabricated using a combination of chemical distillation purification method and vapor transport reaction technique, does not exceed 0.06 ppm (wt) and 0.5 ppm (wt), respectively.

  5. High precision measurement of the e+e- → e+e- angular distribution at √s = 29 GeV

    International Nuclear Information System (INIS)

    Fernandez, E.; Ford, W.T.; Qi, N.

    1984-07-01

    We present the differential angular cross section for Bhabha scattering as measured by the MAC detector at PEP, based on a 127 pb -1 sample at √s = 29 GeV. A fit of the cross section to the prediction of the electroweak standard model yields g/sub a/ 2 = 0.33 +- 0.24 and g/sub v/ 2 = 0.09 +- 0.14 at m/sub Z/ = 90 GeV. The pure QED solution g/sub a/ = g/sub v/ = 0 is excluded at the 2 standard deviation level. 8 references

  6. High p$\\perp$ inclusive charged hadron distributions in Au+Au collisions at √sNN = 130 GeV at RHIC

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Bum Jin [Univ. of Texas, Austin, TX (United States)

    2003-08-01

    This thesis reports the measurement of the inclusive charged particle (h+ + h-) p$\\perp$ spectra for 1.7 < p$\\perp$ < 6 GeV/c at midrapidity (|η| < 0.5) as a function of various centrality classes in Au+Au collisions at √sNN = 130 GeV. Hadron suppression is observed relative to both scaled NN and peripheral Au+Au reference data, possibly indicating non-Abelian radiative energy loss in a hot, dense medium.

  7. DETERMINATION OF STRONTIUM IONS IN WATERS WITH A HIGH CONTENT OF SODIUM IONS

    Directory of Open Access Journals (Sweden)

    Tatiana Mitina

    2015-06-01

    Full Text Available This paper reports on the influence of sodium ions on experimental determination of strontium ions concentration in waters with a high content of sodium ions by using emission flame photometry and atomic absorption spectroscopy. For the method of emission flame photometry it was shown that at a wavelength of 460.7 nm (spectral emission line of strontium the emission is linearly dependent on the concentration of sodium ions. The greatest impact of high concentrations of sodium ions on the result of determination the strontium ions concentration has been registered at low levels of strontium. The influence of nitric acid on the results is also discussed. In the case of using atomic absorption spectroscopy method no influence of sodium ions and nitric acid on the results of determination the strontium ions concentration was revealed. The metrological characteristics of both methods are evaluated.

  8. Revision of the Ge–Ti phase diagram and structural stability of the new phase Ge4Ti5

    International Nuclear Information System (INIS)

    Bittner, Roland W.; Colinet, Catherine; Tedenac, Jean-Claude; Richter, Klaus W.

    2013-01-01

    Highlights: •New compound Ge 4 Ti 5 found by experiments and by DFT ground state calculations. •Enthalpies of formation calculated for different Ge–Ti compounds. •Modifications of the Ge–Ti phase diagram suggested. -- Abstract: The binary phase diagram Ge–Ti was investigated experimentally by powder X-ray diffraction, scanning electron microscopy including EDX analysis, and differential thermal analysis. Total energies of the compounds GeTi 3 , GeTi 2 , Ge 3 Ti 5 , Ge 4 Ti 5 , Ge 5 Ti 6 , GeTi and Ge 2 Ti were calculated for various structure types employing electronic density-functional theory (DFT). Experimental studies as well as electronic calculations show the existence of a new phase Ge 4 Ti 5 (Ge 4 Sm 5 -type, oP36, Pnma) which is formed in a solid state reaction Ge 3 Ti 5 + Ge 5 Ti 6 = Ge 4 Ti 5 . In addition, a significant homogeneity range was observed for the compound Ge 3 Ti 5 and the composition of the liquid phase in the eutectic reaction L = Ge + Ge 2 Ti was found to be at significant higher Ge-content (97.5 at.% Ge) than reported in previous studies. Based on these new results, a modified phase diagram Ge–Ti is suggested. The zero-temperature lattice parameters and the formation enthalpies determined by DTF calculations were found to be in good agreement with experimental data

  9. Interaction genotype by season and its influence on the identification of beans with high content of zinc and iron

    Directory of Open Access Journals (Sweden)

    Camila Andrade Silva

    2012-01-01

    Full Text Available The mineral contents in common bean seeds are influenced, in addition to genetic variation, by environmental crop conditions, especially by the soil type and chemical composition and by the genotype x environment interaction. This study was carried out to verify if the zinc and iron contents are affected by the crop growing period. Ten lines with high iron and zinc contents and ten with low contents were assessed in three seasons: "wet season" of 2009/2010 (sowing in November; "dry season" of 2010 (sowing in February and "winter season" of 2010 (sowing in July, in Lavras, Minas Gerais State, Brazil. The experimental design used was randomized blocks with three replications and plots consisting of two rows of two meters, with a spacing of 0.50 m. The seeds harvested were assessed in regard to iron and zinc mineral contents. The greatest contents were observed in the winter season and the smallest ones in the dry season, with sowing in February. It was observed that in the mean of the three harvests, the lines classified as having high iron and zinc content exhibited an iron quantity 11.0% and a zinc quantity 6.8% above those of low content. The lines by seasons interaction occurs. However, its interference in identification of the groups with high and low content of the two nutrients is not great.

  10. An Extremely Halophilic Proteobacterium Combines a Highly Acidic Proteome with a Low Cytoplasmic Potassium Content*

    Science.gov (United States)

    Deole, Ratnakar; Challacombe, Jean; Raiford, Douglas W.; Hoff, Wouter D.

    2013-01-01

    Halophilic archaea accumulate molar concentrations of KCl in their cytoplasm as an osmoprotectant and have evolved highly acidic proteomes that function only at high salinity. We examined osmoprotection in the photosynthetic Proteobacteria Halorhodospira halophila and Halorhodospira halochloris. Genome sequencing and isoelectric focusing gel electrophoresis showed that the proteome of H. halophila is acidic. In line with this finding, H. halophila accumulated molar concentrations of KCl when grown in high salt medium as detected by x-ray microanalysis and plasma emission spectrometry. This result extends the taxonomic range of organisms using KCl as a main osmoprotectant to the Proteobacteria. The closely related organism H. halochloris does not exhibit an acidic proteome, matching its inability to accumulate K+. This observation indicates recent evolutionary changes in the osmoprotection strategy of these organisms. Upon growth of H. halophila in low salt medium, its cytoplasmic K+ content matches that of Escherichia coli, revealing an acidic proteome that can function in the absence of high cytoplasmic salt concentrations. These findings necessitate a reassessment of two central aspects of theories for understanding extreme halophiles. First, we conclude that proteome acidity is not driven by stabilizing interactions between K+ ions and acidic side chains but by the need for maintaining sufficient solvation and hydration of the protein surface at high salinity through strongly hydrated carboxylates. Second, we propose that obligate protein halophilicity is a non-adaptive property resulting from genetic drift in which constructive neutral evolution progressively incorporates weakly stabilizing K+-binding sites on an increasingly acidic protein surface. PMID:23144460

  11. High water contents in basaltic melt inclusions from Arenal volcano, Costa Rica

    Science.gov (United States)

    Wade, J. A.; Plank, T.; Hauri, E. H.; Melson, W. G.; Soto, G. J.

    2004-12-01

    Despite the importance of water to arc magma genesis, fractionation and eruption, few quantitative constraints exist on the water content of Arenal magmas. Early estimates, by electron microprobe sum deficit, suggested up to 4 wt% H2O in olivine-hosted basaltic andesite melt inclusions (MI) from pre-historic ET-6 tephra (Melson, 1982), and up to 7 wt% H2O in plagioclase and orthopyroxene-hosted dacitic MI from 1968 lapilli (Anderson, 1979). These high water contents are consistent with abundant hornblende phenocrysts in Arenal volcanics, but inconsistent with geochemical tracers such as 10Be and Ba/La that suggest a low flux of recycled material (and presumably water) from the subduction zone. In order to test these ideas, and provide the first direct measurements of water in mafic Arenal magmas, we have studied olivine-hosted MI from the prehistoric (900 yBP; Soto et al., 1998) ET3 tephra layer. MI range from andesitic (> 58% SiO2) to basaltic compositions ( 4 wt%) found here for Arenal basaltic MI support the semi-quantitative data from earlier studies, but are somewhat unexpected given predictions from slab tracers. Arenal water contents (4%) approach those of the 1995 eruption of Cerro Negro in Nicaragua (4-5 wt% in basaltic MI; Roggensack et al., 1997), despite the fact that the latter has Ba/La of > 100, while Arenal has Ba/La Journal of Geology; Melson, William G. (1982) Boletin de Volcanologia; Roggensack et al. (1997) Science; Soto et al. (1998) OSIVAM; Williams-Jones et al. (2001) Journal of Volc. and Geoth. Res.

  12. Remedial measures in Czech houses with high radium content in building material

    International Nuclear Information System (INIS)

    Hulka, J.; Thomas, J.

    1999-01-01

    Three groups of houses built from materials having elevated natural radioactivity content were found in the Czech republic. These are: 1) about hundred old houses in Jachymov (Joachimstal) in Northern Bohemia, where residues from factory producing uranium paints were used as plaster and mortar before the World War II (radium concentration up to 1 MBq/kg, indoor gamma dose rate up to 10-100 μGy/h); 2) some 20 000 family houses built from highly emanating aerated concrete with radium content 500-1000 Bq/kg (produced from flying ash) in the period 1963-1980; 3) more than 2000 family houses from slag concrete of radium content about 3 kBq/kg in average (indoor gamma dose rate up to 2 μGy/h) made in the period 1972-83. Remedy measures were undertaken with state financial support. Intervention levels were laid down 200 Bq/m 3 for EEC (equivalent equilibrium radon concentration - it is equivalent to radon gas concentration 500 Bq/m 3 ), 2 μGy/h for indoor gamma dose rate. Weighted sum of indoor radon and indoor gamma dose rate was used if the latter was above 0,5 μGy/h. The central heat recovery ventilation units were used largely as the remedy measures. Some houses were demolished, in some houses local contamination of plasters was removed. Other tested measures (removal of the contaminated building material in great amount, gamma shielding, wall coating, etc.) proved to be not effective or not acceptable in practice. (author)

  13. Effects of carbon content on high-temperature mechanical and thermal fatigue properties of high-boron austenitic steels

    Directory of Open Access Journals (Sweden)

    Xiang Chen

    2016-01-01

    Full Text Available High-temperature mechanical properties of high-boron austenitic steels (HBASs were studied at 850 °C using a dynamic thermal-mechanical simulation testing machine. In addition, the thermal fatigue properties of the alloys were investigated using the self-restraint Uddeholm thermal fatigue test, during which the alloy specimens were cycled between room temperature and 800°C. Stereomicroscopy and scanning electron microscopy were used to study the surface cracks and cross-sectional microstructure of the alloy specimens after the thermal fatigue tests. The effects of carbon content on the mechanical properties at room temperature and high-temperature as well as thermal fatigue properties of the HBASs were also studied. The experimental results show that increasing carbon content induces changes in the microstructure and mechanical properties of the HBASs. The boride phase within the HBAS matrix exhibits a round and smooth morphology, and they are distributed in a discrete manner. The hardness of the alloys increases from 239 (0.19wt.% C to 302 (0.29wt.% C and 312 HV (0.37wt.% C; the tensile yield strength at 850 °C increases from 165.1 to 190.3 and 197.1 MPa; and the compressive yield strength increases from 166.1 to 167.9 and 184.4 MPa. The results of the thermal fatigue tests (performed for 300 cycles from room temperature to 800 °C indicate that the degree of thermal fatigue of the HBAS with 0.29wt.% C (rating of 2–3 is superior to those of the alloys with 0.19wt.% (rating of 4–5 and 0.37wt.% (rating of 3–4 carbon. The main cause of this difference is the ready precipitation of M23(C,B6-type borocarbides in the alloys with high carbon content during thermal fatigue testing. The precipitation and aggregation of borocarbide particles at the grain boundaries result in the deterioration of the thermal fatigue properties of the alloys.

  14. A prototype method for diagnosing high ice water content probability using satellite imager data

    Science.gov (United States)

    Yost, Christopher R.; Bedka, Kristopher M.; Minnis, Patrick; Nguyen, Louis; Strapp, J. Walter; Palikonda, Rabindra; Khlopenkov, Konstantin; Spangenberg, Douglas; Smith, William L., Jr.; Protat, Alain; Delanoe, Julien

    2018-03-01

    Recent studies have found that ingestion of high mass concentrations of ice particles in regions of deep convective storms, with radar reflectivity considered safe for aircraft penetration, can adversely impact aircraft engine performance. Previous aviation industry studies have used the term high ice water content (HIWC) to define such conditions. Three airborne field campaigns were conducted in 2014 and 2015 to better understand how HIWC is distributed in deep convection, both as a function of altitude and proximity to convective updraft regions, and to facilitate development of new methods for detecting HIWC conditions, in addition to many other research and regulatory goals. This paper describes a prototype method for detecting HIWC conditions using geostationary (GEO) satellite imager data coupled with in situ total water content (TWC) observations collected during the flight campaigns. Three satellite-derived parameters were determined to be most useful for determining HIWC probability: (1) the horizontal proximity of the aircraft to the nearest overshooting convective updraft or textured anvil cloud, (2) tropopause-relative infrared brightness temperature, and (3) daytime-only cloud optical depth. Statistical fits between collocated TWC and GEO satellite parameters were used to determine the membership functions for the fuzzy logic derivation of HIWC probability. The products were demonstrated using data from several campaign flights and validated using a subset of the satellite-aircraft collocation database. The daytime HIWC probability was found to agree quite well with TWC time trends and identified extreme TWC events with high probability. Discrimination of HIWC was more challenging at night with IR-only information. The products show the greatest capability for discriminating TWC ≥ 0.5 g m-3. Product validation remains challenging due to vertical TWC uncertainties and the typically coarse spatio-temporal resolution of the GEO data.

  15. Development and Application of High-Content Biological Screening for Modulators of NET Production

    Directory of Open Access Journals (Sweden)

    Ilaria J. Chicca

    2018-03-01

    Full Text Available Neutrophil extracellular traps (NETs are DNA-based antimicrobial web-like structures whose release is predominantly mediated by reactive oxygen species (ROS; their purpose is to combat infections. However, unbalanced NET production and clearance is involved in tissue injury, circulation of auto-antibodies and development of several chronic diseases. Currently, there is lack of agreement regarding the high-throughput methods available for NET investigation. This study, therefore, aimed to develop and optimize a high-content analysis (HCA approach, which can be applied for the assay of NET production and for the screening of compounds involved in the modulation of NET release. A suitable paraformaldehyde fixation protocol was established to enable HCA of neutrophils and NETs. Bespoke and in-built bioinformatics algorithms were validated by comparison with standard low-throughput approaches for application in HCA of NETs. Subsequently, the optimized protocol was applied to high-content screening (HCS of a pharmaceutically derived compound library to identify modulators of NETosis. Of 56 compounds assessed, 8 were identified from HCS for further characterization of their effects on NET formation as being either inducers, inhibitors or biphasic modulators. The effects of these compounds on naïve neutrophils were evaluated by using specific assays for the induction of ROS and NET production, while their modulatory activity was validated in phorbol 12-myristate 13-acetate-stimulated neutrophils. Results indicated the involvement of glutathione reductase, Src family kinases, molecular-target-of-Rapamycin, and mitogen-activated-protein-kinase pathways in NET release. The compounds and pathways identified may provide targets for novel therapeutic approaches for treating NET-associated pathologies.

  16. Adaptive platform for fluorescence microscopy-based high-content screening

    Science.gov (United States)

    Geisbauer, Matthias; Röder, Thorsten; Chen, Yang; Knoll, Alois; Uhl, Rainer

    2010-04-01

    Fluorescence microscopy has become a widely used tool for the study of medically relevant intra- and intercellular processes. Extracting meaningful information out of a bulk of acquired images is usually performed during a separate post-processing task. Thus capturing raw data results in an unnecessary huge number of images, whereas usually only a few images really show the particular information that is searched for. Here we propose a novel automated high-content microscope system, which enables experiments to be carried out with only a minimum of human interaction. It facilitates a huge speed-increase for cell biology research and its applications compared to the widely performed workflows. Our fluorescence microscopy system can automatically execute application-dependent data processing algorithms during the actual experiment. They are used for image contrast enhancement, cell segmentation and/or cell property evaluation. On-the-fly retrieved information is used to reduce data and concomitantly control the experiment process in real-time. Resulting in a closed loop of perception and action the system can greatly decrease the amount of stored data on one hand and increases the relative valuable data content on the other hand. We demonstrate our approach by addressing the problem of automatically finding cells with a particular combination of labeled receptors and then selectively stimulate them with antagonists or agonists. The results are then compared against the results of traditional, static systems.

  17. Changes in the Diaphragm Lipid Content after Administration of Streptozotocin and High-Fat Diet Regime

    Directory of Open Access Journals (Sweden)

    Bartlomiej Lukaszuk

    2017-01-01

    Full Text Available The diaphragm is a dome-shaped skeletal muscle indispensable for breathing. Its activity contributes up to 70% of the total ventilatory function at rest. In comparison to other skeletal muscles, it is distinguished by an oxidative phenotype and uninterrupted cyclic contraction pattern. Surprisingly, the research regarding diaphragm diabetic phenotype particularly in the light of lipid-induced insulin resistance is virtually nonexistent. Male Wistar rats were randomly allocated into 3 groups: control, streptozotocin-induced (STZ type-1 diabetes, and rodents fed with high-fat diet (HFD. Additionally, half of the animals from each group were administered with myriocin, a robust, selective inhibitor of ceramide synthesis and, therefore, a potent agent ameliorating insulin resistance. Diaphragm lipid contents were evaluated using chromatography. Fatty acid transporter expression was determined by Western blot. The STZ and HFD rats had increased concentration of lipids, namely, ceramides (CER and diacylglycerols (DAG. Interestingly, this coincided with an increased concentration of long-chain (C ≥ 16 saturated fatty acid species present in both the aforementioned lipid fractions. The CER/DAG accumulation was accompanied by an elevated fatty acid transporter expression (FATP-1 in HFD and FATP-4 in STZ. Surprisingly, we observed a significantly decreased triacylglycerol content in the diaphragms of STZ-treated rats.

  18. A Simple and Sensitive High-Content Assay for the Characterization of Antiproliferative Therapeutic Antibodies.

    Science.gov (United States)

    Stengl, Andreas; Hörl, David; Leonhardt, Heinrich; Helma, Jonas

    2017-03-01

    Monoclonal antibodies (mAbs) have become a central class of therapeutic agents in particular as antiproliferative compounds. Their often complex modes of action require sensitive assays during early, functional characterization. Current cell-based proliferation assays often detect metabolites that are indicative of metabolic activity but do not directly account for cell proliferation. Measuring DNA replication by incorporation of base analogues such as 5-bromo-2'-deoxyuridine (BrdU) fills this analytical gap but was previously restricted to bulk effect characterization in enzyme-linked immunosorbent assay formats. Here, we describe a cell-based assay format for the characterization of antiproliferative mAbs regarding potency and mode of action in a single experiment. The assay makes use of single cell-based high-content-analysis (HCA) for the reliable quantification of replicating cells and DNA content via 5-ethynyl-2'-deoxyuridine (EdU) and 4',6-diamidino-2-phenylindole (DAPI), respectively, as sensitive measures of antiproliferative mAb activity. We used trastuzumab, an antiproliferative therapeutic antibody interfering with HER2 cell surface receptor-mediated growth signal transduction, and HER2-overexpressing cell lines BT474 and SKBR3 to demonstrate up to 10-fold signal-to-background (S/B) ratios for treated versus untreated cells and a shift in cell cycle profiles indicating antibody-induced cell cycle arrest. The assay is simple, cost-effective, and sensitive, providing a cell-based format for preclinical characterization of therapeutic mAbs.

  19. High content image based analysis identifies cell cycle inhibitors as regulators of Ebola virus infection.

    Science.gov (United States)

    Kota, Krishna P; Benko, Jacqueline G; Mudhasani, Rajini; Retterer, Cary; Tran, Julie P; Bavari, Sina; Panchal, Rekha G

    2012-09-25

    Viruses modulate a number of host biological responses including the cell cycle to favor their replication. In this study, we developed a high-content imaging (HCI) assay to measure DNA content and identify different phases of the cell cycle. We then investigated the potential effects of cell cycle arrest on Ebola virus (EBOV) infection. Cells arrested in G1 phase by serum starvation or G1/S phase using aphidicolin or G2/M phase using nocodazole showed much reduced EBOV infection compared to the untreated control. Release of cells from serum starvation or aphidicolin block resulted in a time-dependent increase in the percentage of EBOV infected cells. The effect of EBOV infection on cell cycle progression was found to be cell-type dependent. Infection of asynchronous MCF-10A cells with EBOV resulted in a reduced number of cells in G2/M phase with concomitant increase of cells in G1 phase. However, these effects were not observed in HeLa or A549 cells. Together, our studies suggest that EBOV requires actively proliferating cells for efficient replication. Furthermore, multiplexing of HCI based assays to detect viral infection, cell cycle status and other phenotypic changes in a single cell population will provide useful information during screening campaigns using siRNA and small molecule therapeutics.

  20. High Content Image Based Analysis Identifies Cell Cycle Inhibitors as Regulators of Ebola Virus Infection

    Directory of Open Access Journals (Sweden)

    Sina Bavari

    2012-09-01

    Full Text Available Viruses modulate a number of host biological responses including the cell cycle to favor their replication. In this study, we developed a high-content imaging (HCI assay to measure DNA content and identify different phases of the cell cycle. We then investigated the potential effects of cell cycle arrest on Ebola virus (EBOV infection. Cells arrested in G1 phase by serum starvation or G1/S phase using aphidicolin or G2/M phase using nocodazole showed much reduced EBOV infection compared to the untreated control. Release of cells from serum starvation or aphidicolin block resulted in a time-dependent increase in the percentage of EBOV infected cells. The effect of EBOV infection on cell cycle progression was found to be cell-type dependent. Infection of asynchronous MCF-10A cells with EBOV resulted in a reduced number of cells in G2/M phase with concomitant increase of cells in G1 phase. However, these effects were not observed in HeLa or A549 cells. Together, our studies suggest that EBOV requires actively proliferating cells for efficient replication. Furthermore, multiplexing of HCI based assays to detect viral infection, cell cycle status and other phenotypic changes in a single cell population will provide useful information during screening campaigns using siRNA and small molecule therapeutics.

  1. Auxiliary units for refining of high nitrogen content oils: Premium II refinery case

    Energy Technology Data Exchange (ETDEWEB)

    Nicolato, Paolo Contim; Pinotti, Rafael [Petroleo Brasileiro S.A. (PETROBRAS), Rio de Janeiro, RJ (Brazil)

    2012-07-01

    PETROBRAS is constantly investing on its refining park in order to increase the production of clean and stable fuels and to be capable to process heavier oils with high contaminants content. Sulfur and nitrogen are the main heteroatoms present in petroleum. They are responsible for some undesirable fuels properties like corrosivity and instability, and also emit pollutants when burnt. Hydrotreating and hydrocracking processes are designed to remove these contaminants and adjust other fuel properties, generating, as byproduct, sour gases and sour water streams rich in H{sub 2}S and NH{sub 3}, which are usually sent to Sour Water Treatment Units and Sulfur Recovery Units. The regeneration of the amine used for the light streams treatment, as fuel gas and LPG, also generates sour gas streams that must be also sent to Sulfur Recovery Units. As the ammonia content in the sour streams increases, some design parameters must be adjusted to avoid increasing the Refinery emissions. Sulfur Recovery Units must provide proper NH3 destruction. Sour Water Treatment must have a proper segregation between H{sub 2}S and ammonia streams, whenever desirable. Amine Regeneration Systems must have an efficient procedure to avoid the ammonia concentration in the amine solution. This paper presents some solutions usually applied to the Petroleum Industry and analyses some aspects related to Premium II Refinery Project and how its design will help the Brazilian refining park to meet future environmental regulation and market demands. (author)

  2. Density-driven structural transformations in network forming glasses: a high-pressure neutron diffraction study of GeO2 glass up to 17.5 GPa

    International Nuclear Information System (INIS)

    Salmon, Philip S; Drewitt, James W E; Whittaker, Dean A J; Zeidler, Anita; Wezka, Kamil; Bull, Craig L; Tucker, Matthew G; Wilding, Martin C; Guthrie, Malcolm; Marrocchelli, Dario

    2012-01-01

    The structure of GeO 2 glass was investigated at pressures up to 17.5(5) GPa using in situ time-of-flight neutron diffraction with a Paris-Edinburgh press employing sintered diamond anvils. A new methodology and data correction procedure were developed, enabling a reliable measurement of structure factors that are largely free from diamond Bragg peaks. Calibration curves, which are important for neutron diffraction work on disordered materials, were constructed for pressure as a function of applied load for both single and double toroid anvil geometries. The diffraction data are compared to new molecular-dynamics simulations made using transferrable interaction potentials that include dipole-polarization effects. The results, when taken together with those from other experimental methods, are consistent with four densification mechanisms. The first, at pressures up to ≃ 5 GPa, is associated with a reorganization of GeO 4 units. The second, extending over the range from ≃ 5 to 10 GPa, corresponds to a regime where GeO 4 units are replaced predominantly by GeO 5 units. In the third, as the pressure increases beyond ∼10 GPa, appreciable concentrations of GeO 6 units begin to form and there is a decrease in the rate of change of the intermediate-range order as measured by the pressure dependence of the position of the first sharp diffraction peak. In the fourth, at about 30 GPa, the transformation to a predominantly octahedral glass is achieved and further densification proceeds via compression of the Ge-O bonds. The observed changes in the measured diffraction patterns for GeO 2 occur at similar dimensionless number densities to those found for SiO 2 , indicating similar densification mechanisms for both glasses. This implies a regime from about 15 to 24 GPa where SiO 4 units are replaced predominantly by SiO 5 units, and a regime beyond ∼24 GPa where appreciable concentrations of SiO 6 units begin to form.

  3. Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI

    Directory of Open Access Journals (Sweden)

    John E. Cunningham

    2012-04-01

    Full Text Available We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality. Optimal growth conditions have been identified to achieve low defect density, low RMS roughness with high selectivity and precise control of silicon content. Fabricated vertical p-i-n diodes exhibit very low dark current density of 5 mA/cm2 at −1 V bias. Under a 7.5 V/µm E-field, GeSi alloys with 0.6% Si content demonstrate very strong electro-absorption with an estimated effective ∆α/α around 3.5 at 1,590 nm. We compared measured ∆α/α performance to that of bulk Ge. Optical modulation up to 40 GHz is observed in waveguide devices while small signal analysis indicates bandwidth is limited by device parasitics.

  4. Advanced thermal barrier coatings for operation in high hydrogen content fueled gas turbines.

    Energy Technology Data Exchange (ETDEWEB)

    Sampath, Sanjay [Stony Brook Univ., NY (United States)

    2015-04-02

    The Center for Thermal Spray Research (CTSR) at Stony Brook University in partnership with its industrial Consortium for Thermal Spray Technology is investigating science and technology related to advanced metallic alloy bond coats and ceramic thermal barrier coatings for applications in the hot section of gasified coal-based high hydrogen turbine power systems. In conjunction with our OEM partners (GE and Siemens) and through strategic partnership with Oak Ridge National Laboratory (ORNL) (materials degradation group and high temperature materials laboratory), a systems approach, considering all components of the TBC (multilayer ceramic top coat, metallic bond coat & superalloy substrate) is being taken during multi-layered coating design, process development and subsequent environmental testing. Recent advances in process science and advanced in situ thermal spray coating property measurement enabled within CTSR has been incorporated for full-field enhancement of coating and process reliability. The development of bond coat processing during this program explored various aspects of processing and microstructure and linked them to performance. The determination of the bond coat material was carried out during the initial stages of the program. Based on tests conducted both at Stony Brook University as well as those carried out at ORNL it was determined that the NiCoCrAlYHfSi (Amdry) bond coats had considerable benefits over NiCoCrAlY bond coats. Since the studies were also conducted at different cycling frequencies, thereby addressing an associated need for performance under different loading conditions, the Amdry bond coat was selected as the material of choice going forward in the program. With initial investigations focused on the fabrication of HVOF bond coats and the performance of TBC under furnace cycle tests , several processing strategies were developed. Two-layered HVOF bond coats were developed to render optimal balance of density and surface roughness

  5. Growth Mechanism and Origin of High s p3 Content in Tetrahedral Amorphous Carbon

    Science.gov (United States)

    Caro, Miguel A.; Deringer, Volker L.; Koskinen, Jari; Laurila, Tomi; Csányi, Gábor

    2018-04-01

    We study the deposition of tetrahedral amorphous carbon (ta-C) films from molecular dynamics simulations based on a machine-learned interatomic potential trained from density-functional theory data. For the first time, the high s p3 fractions in excess of 85% observed experimentally are reproduced by means of computational simulation, and the deposition energy dependence of the film's characteristics is also accurately described. High confidence in the potential and direct access to the atomic interactions allow us to infer the microscopic growth mechanism in this material. While the widespread view is that ta-C grows by "subplantation," we show that the so-called "peening" model is actually the dominant mechanism responsible for the high s p3 content. We show that pressure waves lead to bond rearrangement away from the impact site of the incident ion, and high s p3 fractions arise from a delicate balance of transitions between three- and fourfold coordinated carbon atoms. These results open the door for a microscopic understanding of carbon nanostructure formation with an unprecedented level of predictive power.

  6. Quinary wurtzite Zn-Ga-Ge-N-O solid solutions and their photocatalytic properties under visible light irradiation

    Science.gov (United States)

    Xie, Yinghao; Wu, Fangfang; Sun, Xiaoqin; Chen, Hongmei; Lv, Meilin; Ni, Shuang; Liu, Gang; Xu, Xiaoxiang

    2016-01-01

    Wurtzite solid solutions between GaN and ZnO highlight an intriguing paradigm for water splitting into hydrogen and oxygen using solar energy. However, large composition discrepancy often occurs inside the compound owing to the volatile nature of Zn, thereby prescribing rigorous terms on synthetic conditions. Here we demonstrate the merits of constituting quinary Zn-Ga-Ge-N-O solid solutions by introducing Ge into the wurtzite framework. The presence of Ge not only mitigates the vaporization of Zn but also strongly promotes particle crystallization. Synthetic details for these quinary compounds were systematically explored and their photocatalytic properties were thoroughly investigated. Proper starting molar ratios of Zn/Ga/Ge are of primary importance for single phase formation, high particle crystallinity and good photocatalytic performance. Efficient photocatalytic hydrogen and oxygen production from water were achieved for these quinary solid solutions which is strongly correlated with Ge content in the structure. Apparent quantum efficiency for optimized sample approaches 1.01% for hydrogen production and 1.14% for oxygen production. Theoretical calculation reveals the critical role of Zn for the band gap reduction in these solid solutions and their superior photocatalytic acitivity can be understood by the preservation of Zn in the structure as well as a good crystallinity after introducing Ge.

  7. Iron content and solubility in dust from high-alpine snow along a north-south transect of High Asia

    Directory of Open Access Journals (Sweden)

    Guangjian Wu

    2012-04-01

    Full Text Available This study describes the dissolved and insoluble iron fraction of dust (mineral aerosol in high-alpine snow samples collected along a north-south transect across High Asia (Eastern Tien Shan, Qilian Shan, and Southern Tibetan Plateau. This dust provides the basic chemical properties of mid- and high-level tropospheric Asian dust that can supply the limiting iron nutrient for phytoplankton growth in the North Pacific. The iron content in Asian dust averages 4.95% in Eastern Tien Shan, 3.38–5.41% along Qilian Shan and 3.85% in the Southern Tibetan Plateau. The iron fractional solubility averages about 0.25% in Eastern Tien Shan, 0.05–2% along Qilian Shan and 1.5% in the Southern Tibetan Plateau. Among the controlling factors that can affect iron solubility in Asian dust, such as dust composition and particle grain size, acidity seems to be the most significant and can increase the iron solubility by one or two orders of magnitude with acidification of pH=0.66. Our results reveal that iron solubility of dust in the remote downwind sites is higher than that in high-alpine snow, confirming the strong pH-dependence of iron solubility, and indicating that Asian dust shows a large variation in iron solubility on a regional scale.

  8. The preparation and characterization of CNx film with high nitrogen content by cathode electrodeposition

    International Nuclear Information System (INIS)

    Zhang, J.-T.; Cao, C.-B.; Lv Qiang; Li Chao; Zhu Hesun

    2003-01-01

    CN x thin film with high nitrogen content was prepared on ITO conductive glass substrates by cathode electrodeposition, using dicyandiamide (C 2 H 4 N 4 ) in acetone as precursors. The surface morphologies, atomic bonding state, and chemical composition were analyzed by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) spectroscopy. The CN x particles got nanometer level with the average size of 80 nm. The maximum value of the N/C atomic ratio was more than 1. Carbon and nitrogen existed mainly in the form of tetrahedral C-N bonds, with a few C-N bonds. From UV-Vis absorption spectrum, we found that during near-ultraviolet area the deposited CN x films appeared nonlinear optical absorption phenomena, and the ultraviolet light (200-280 nm) could be transmitted. The electrical resistivities of the films were in the range of 10 12 -10 16 Ω cm

  9. Doping of GaN{sub 1-x}As{sub x} with high As content

    Energy Technology Data Exchange (ETDEWEB)

    Levander, A.X.; Novikov, S.V.; Liliental-Weber, Z.; dos Reis, R.; Dubon, O.D.; Wu, J.; Foxon, C.T.; Yu, K.M.; Walukiewicz, W.

    2011-09-22

    Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}As{sub x} with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}As{sub x}.

  10. High content screening for G protein-coupled receptors using cell-based protein translocation assays

    DEFF Research Database (Denmark)

    Grånäs, Charlotta; Lundholt, Betina Kerstin; Heydorn, Arne

    2005-01-01

    G protein-coupled receptors (GPCRs) have been one of the most productive classes of drug targets for several decades, and new technologies for GPCR-based discovery promise to keep this field active for years to come. While molecular screens for GPCR receptor agonist- and antagonist-based drugs...... will continue to be valuable discovery tools, the most exciting developments in the field involve cell-based assays for GPCR function. Some cell-based discovery strategies, such as the use of beta-arrestin as a surrogate marker for GPCR function, have already been reduced to practice, and have been used...... as valuable discovery tools for several years. The application of high content cell-based screening to GPCR discovery has opened up additional possibilities, such as direct tracking of GPCRs, G proteins and other signaling pathway components using intracellular translocation assays. These assays provide...

  11. Optimum tungsten content in high strength 9 to 12% chromium containing creep resistant steels

    International Nuclear Information System (INIS)

    Hasegawa, Y.; Muraki, T.; Mimura, H.

    2000-01-01

    Tungsten containing ferritic creep resistant steels are the candidate materials for ultra-super-critical fossil power plant because of their high creep rupture strength. But the strengthening mechanisms by tungsten addition have not yet been completely studied. In this report, creep rupture time and creep strain rate measurement decided the optimum tungsten content in 9 to 12% chromium ferritic steels. The precipitation behavior of Laves phase and the precise discussion of creep strain rate analyses explain the contribution of Laves phase at the lath boundary and the contribution of tungsten in solid solution. P92 contains the optimum amount of tungsten and chromium, 1.8 mass% and 9 mass% respectively judging from the creep rupture strength point of view. (orig.)

  12. Subfamily logos: visualization of sequence deviations at alignment positions with high information content

    Directory of Open Access Journals (Sweden)

    Beitz Eric

    2006-06-01

    Full Text Available Abstract Background Recognition of relevant sequence deviations can be valuable for elucidating functional differences between protein subfamilies. Interesting residues at highly conserved positions can then be mutated and experimentally analyzed. However, identification of such sites is tedious because automated approaches are scarce. Results Subfamily logos visualize subfamily-specific sequence deviations. The display is similar to classical sequence logos but extends into the negative range. Positive, upright characters correspond to residues which are characteristic for the subfamily, negative, upside-down characters to residues typical for the remaining sequences. The symbol height is adjusted to the information content of the alignment position. Residues which are conserved throughout do not appear. Conclusion Subfamily logos provide an intuitive display of relevant sequence deviations. The method has proven to be valid using a set of 135 aligned aquaporin sequences in which established subfamily-specific positions were readily identified by the algorithm.

  13. Understanding a High School Physics Teacher's Pedagogical Content Knowledge of Argumentation

    Science.gov (United States)

    Wang, Jianlan; Buck, Gayle A.

    2016-08-01

    Scientific argumentation is an important learning objective in science education. It is also an effective instructional approach to constructivist science learning. The implementation of argumentation in school settings requires science teachers, who are pivotal agents of transforming classroom practices, to develop sophisticated knowledge of argumentation. However, there is a lack of understanding about science teachers' knowledge of argumentation, especially the dialogic meaning of argumentation. In this case study, we closely examine a high school physics teacher's argumentation-related pedagogic content knowledge (PCK) in the context of dialogic argumentation. We synthesize the teacher's performed PCK from his argumentation practices and narrated PCK from his reflection on the argumentation practices, from which we summarize his PCK of argumentation from the perspectives of orientation, instructional strategies, students, curriculum, and assessment. Finally, we describe the teacher's perception and adaption of argumentation in his class. We also identity the barriers to argumentation implementation in this particular case and suggest solutions to overcome these barriers.

  14. General Staining and Segmentation Procedures for High Content Imaging and Analysis.

    Science.gov (United States)

    Chambers, Kevin M; Mandavilli, Bhaskar S; Dolman, Nick J; Janes, Michael S

    2018-01-01

    Automated quantitative fluorescence microscopy, also known as high content imaging (HCI), is a rapidly growing analytical approach in cell biology. Because automated image analysis relies heavily on robust demarcation of cells and subcellular regions, reliable methods for labeling cells is a critical component of the HCI workflow. Labeling of cells for image segmentation is typically performed with fluorescent probes that bind DNA for nuclear-based cell demarcation or with those which react with proteins for image analysis based on whole cell staining. These reagents, along with instrument and software settings, play an important role in the successful segmentation of cells in a population for automated and quantitative image analysis. In this chapter, we describe standard procedures for labeling and image segmentation in both live and fixed cell samples. The chapter will also provide troubleshooting guidelines for some of the common problems associated with these aspects of HCI.

  15. A tailing genome walking method suitable for genomes with high local GC content.

    Science.gov (United States)

    Liu, Taian; Fang, Yongxiang; Yao, Wenjuan; Guan, Qisai; Bai, Gang; Jing, Zhizhong

    2013-10-15

    The tailing genome walking strategies are simple and efficient. However, they sometimes can be restricted due to the low stringency of homo-oligomeric primers. Here we modified their conventional tailing step by adding polythymidine and polyguanine to the target single-stranded DNA (ssDNA). The tailed ssDNA was then amplified exponentially with a specific primer in the known region and a primer comprising 5' polycytosine and 3' polyadenosine. The successful application of this novel method for identifying integration sites mediated by φC31 integrase in goat genome indicates that the method is more suitable for genomes with high complexity and local GC content. Copyright © 2013 Elsevier Inc. All rights reserved.

  16. Remote operation of microwave systems for solids content analysis and chemical dissolution in highly radioactive environments

    International Nuclear Information System (INIS)

    Sturcken, E.F.; Floyd, T.S.; Manchester, D.P.

    1986-10-01

    Microwave systems provide quick and easy determination of solids content of samples in high-level radioactive cells. In addition, dissolution of samples is much faster when employing microwave techniques. These are great advantages because work in cells,using master-slave manipulators through leaded glass walls, is normally slower by an order of magnitude than direct contact methods. This paper describes the modifiction of a moisture/solids analyzer microwave system and a drying/digestion microwave system for remote operation in radiation environments. The moisture/solids analyzer has operated satisfactorily for over a year in a gamma radiation field of 1000 roentgens per hour and the drying/digestion system is ready for installation in a cell

  17. CellProfiler and KNIME: open source tools for high content screening.

    Science.gov (United States)

    Stöter, Martin; Niederlein, Antje; Barsacchi, Rico; Meyenhofer, Felix; Brandl, Holger; Bickle, Marc

    2013-01-01

    High content screening (HCS) has established itself in the world of the pharmaceutical industry as an essential tool for drug discovery and drug development. HCS is currently starting to enter the academic world and might become a widely used technology. Given the diversity of problems tackled in academic research, HCS could experience some profound changes in the future, mainly with more imaging modalities and smart microscopes being developed. One of the limitations in the establishment of HCS in academia is flexibility and cost. Flexibility is important to be able to adapt the HCS setup to accommodate the multiple different assays typical of academia. Many cost factors cannot be avoided, but the costs of the software packages necessary to analyze large datasets can be reduced by using Open Source software. We present and discuss the Open Source software CellProfiler for image analysis and KNIME for data analysis and data mining that provide software solutions which increase flexibility and keep costs low.

  18. Computers in the investigation of the impurity content of high-purity materials

    International Nuclear Information System (INIS)

    Makarov, Yu.B.; Yan'kov, S.V.

    1987-01-01

    The efficiency of the concept of data banks for the accumulation and processing of information is now generally acknowledged. In scientific investigations not only bibliographic but also factual data banks are becoming more and more prevalent. In this article, the authors consider the possibilities of providing a data bank on high-purity materials for the study of impurity contents. Also in this paper, the authors distinguish the following groups of problems that arise in the study of impurity composition and presents examples of their proposed solutions to these problems: the analysis of error and the determination of the most probably value of impurity concentration; the estimation of average properties of impurity composition with respect to groups of impurities and samples, and the forecast of the complete impurity composition

  19. Characterization of SPAD Array for Multifocal High-Content Screening Applications

    Directory of Open Access Journals (Sweden)

    Anthony Tsikouras

    2016-10-01

    Full Text Available Current instruments used to detect specific protein-protein interactions in live cells for applications in high-content screening (HCS are limited by the time required to measure the lifetime. Here, a 32 × 1 single-photon avalanche diode (SPAD array was explored as a detector for fluorescence lifetime imaging (FLIM in HCS. Device parameters and characterization results were interpreted in the context of the application to determine if the SPAD array could satisfy the requirements of HCS-FLIM. Fluorescence lifetime measurements were performed using a known fluorescence standard; and the recovered fluorescence lifetime matched literature reported values. The design of a theoretical 32 × 32 SPAD array was also considered as a detector for a multi-point confocal scanning microscope.

  20. Organosilica hybrid nanomaterials with a high organic content: syntheses and applications of silsesquioxanes

    KAUST Repository

    Croissant, Jonas G.

    2016-11-07

    Organic-inorganic hybrid materials garner properties from their organic and inorganic matrices as well as synergistic features, and therefore have recently attracted much attention at the nanoscale. Non-porous organosilica hybrid nanomaterials with a high organic content such as silsesquioxanes (R-SiO, with R organic groups) and bridged silsesquioxanes (OSi-R-SiO) are especially attractive hybrids since they provide 20 to 80 weight percent of organic functional groups in addition to the known chemistry and stability of silica. In the organosilica family, silsesquioxanes (R-SiO) stand between silicas (SiO) and silicones (RSiO), and are variously called organosilicas, ormosil (organically-modified silica), polysilsesquioxanes and silica hybrids. Herein, we comprehensively review non-porous silsesquioxane and bridged silsesquioxane nanomaterials and their applications in nanomedicine, electro-optics, and catalysis.

  1. Identifying Content Knowledge for Teaching Energy: Examples from High School Physics

    Science.gov (United States)

    Robertson, Amy D.; Scherr, Rachel E.; Goodhew, Lisa M.; Daane, Abigail R.; Gray, Kara E.; Aker, Leanna B.

    2017-01-01

    "Content knowledge for teaching" is the specialized content knowledge that teachers use in practice the content knowledge that serves them for tasks of teaching such as revoicing students' ideas, choosing an instructional activity to address a student misunderstanding, and evaluating student statements. We describe a methodology for…

  2. High content live cell imaging for the discovery of new antimalarial marine natural products

    Directory of Open Access Journals (Sweden)

    Cervantes Serena

    2012-01-01

    Full Text Available Abstract Background The human malaria parasite remains a burden in developing nations. It is responsible for up to one million deaths a year, a number that could rise due to increasing multi-drug resistance to all antimalarial drugs currently available. Therefore, there is an urgent need for the discovery of new drug therapies. Recently, our laboratory developed a simple one-step fluorescence-based live cell-imaging assay to integrate the complex biology of the human malaria parasite into drug discovery. Here we used our newly developed live cell-imaging platform to discover novel marine natural products and their cellular phenotypic effects against the most lethal malaria parasite, Plasmodium falciparum. Methods A high content live cell imaging platform was used to screen marine extracts effects on malaria. Parasites were grown in vitro in the presence of extracts, stained with RNA sensitive dye, and imaged at timed intervals with the BD Pathway HT automated confocal microscope. Results Image analysis validated our new methodology at a larger scale level and revealed potential antimalarial activity of selected extracts with a minimal cytotoxic effect on host red blood cells. To further validate our assay, we investigated parasite's phenotypes when incubated with the purified bioactive natural product bromophycolide A. We show that bromophycolide A has a strong and specific morphological effect on parasites, similar to the ones observed from the initial extracts. Conclusion Collectively, our results show that high-content live cell-imaging (HCLCI can be used to screen chemical libraries and identify parasite specific inhibitors with limited host cytotoxic effects. All together we provide new leads for the discovery of novel antimalarials.

  3. High content live cell imaging for the discovery of new antimalarial marine natural products.

    Science.gov (United States)

    Cervantes, Serena; Stout, Paige E; Prudhomme, Jacques; Engel, Sebastian; Bruton, Matthew; Cervantes, Michael; Carter, David; Tae-Chang, Young; Hay, Mark E; Aalbersberg, William; Kubanek, Julia; Le Roch, Karine G

    2012-01-03

    The human malaria parasite remains a burden in developing nations. It is responsible for up to one million deaths a year, a number that could rise due to increasing multi-drug resistance to all antimalarial drugs currently available. Therefore, there is an urgent need for the discovery of new drug therapies. Recently, our laboratory developed a simple one-step fluorescence-based live cell-imaging assay to integrate the complex biology of the human malaria parasite into drug discovery. Here we used our newly developed live cell-imaging platform to discover novel marine natural products and their cellular phenotypic effects against the most lethal malaria parasite, Plasmodium falciparum. A high content live cell imaging platform was used to screen marine extracts effects on malaria. Parasites were grown in vitro in the presence of extracts, stained with RNA sensitive dye, and imaged at timed intervals with the BD Pathway HT automated confocal microscope. Image analysis validated our new methodology at a larger scale level and revealed potential antimalarial activity of selected extracts with a minimal cytotoxic effect on host red blood cells. To further validate our assay, we investigated parasite's phenotypes when incubated with the purified bioactive natural product bromophycolide A. We show that bromophycolide A has a strong and specific morphological effect on parasites, similar to the ones observed from the initial extracts. Collectively, our results show that high-content live cell-imaging (HCLCI) can be used to screen chemical libraries and identify parasite specific inhibitors with limited host cytotoxic effects. All together we provide new leads for the discovery of novel antimalarials. © 2011 Cervantes et al; licensee BioMed Central Ltd.

  4. Molten salt oxidation of organic hazardous waste with high salt content.

    Science.gov (United States)

    Lin, Chengqian; Chi, Yong; Jin, Yuqi; Jiang, Xuguang; Buekens, Alfons; Zhang, Qi; Chen, Jian

    2018-02-01

    Organic hazardous waste often contains some salt, owing to the widespread use of alkali salts during industrial manufacturing processes. These salts cause complications during the treatment of this type of waste. Molten salt oxidation is a flameless, robust thermal process, with inherent capability of destroying the organic constituents of wastes, while retaining the inorganic ingredients in the molten salt. In the present study, molten salt oxidation is employed for treating a typical organic hazardous waste with a high content of alkali salts. The hazardous waste derives from the production of thiotriazinone. Molten salt oxidation experiments have been conducted using a lab-scale molten salt oxidation reactor, and the emissions of CO, NO, SO 2 , HCl and dioxins are studied. Impacts are investigated from the composition of the molten salts, the types of feeding tube, the temperature of molten carbonates and the air factor. Results show that the waste can be oxidised effectively in a molten salt bath. Temperature of molten carbonates plays the most important role. With the temperature rising from 600 °C to 750 °C, the oxidation efficiency increases from 91.1% to 98.3%. Compared with the temperature, air factor has but a minor effect, as well as the composition of the molten salts and the type of feeding tube. The molten carbonates retain chlorine with an efficiency higher than 99.9% and the emissions of dioxins are below 8 pg TEQ g -1 sample. The present study shows that molten salt oxidation is a promising alternative for the disposal of organic hazardous wastes containing a high salt content.

  5. Adsorption of sulfamethoxazole and sulfapyridine antibiotics in high organic content soils.

    Science.gov (United States)

    Chen, Kuen-Lin; Liu, Li-Chun; Chen, Wan-Ru

    2017-12-01

    Many antibiotics, including sulfonamides, are being frequently detected in soil and groundwater. Livestock waste is an important source of antibiotic pollution, and sulfonamides may be present along with organic-rich substances. This study aims to investigate the sorption reaction of two sulfonamides, sulfamethoxazole (SMZ) and sulfapyridine (SPY) in two organic-rich sorbents: a commercial peat soil (38.41% carbon content) and a composted manure (24.33% carbon content). Batch reactions were conducted to evaluate the impacts of pH (4.5-9.5) and background ions (0.001 M-0.1 M CaCl 2 ) on their sorption. Both linear partitioning and Freundlich sorption isotherms fit the reaction well. The n values of Freundlich isotherm were close to 1 in most conditions suggesting that the hydrophobic partition is the major adsorption mechanism. In terms of SMZ, K d declined with increases in the pH. SPY has a pyridine group that is responsible for adsorption at high pH values, and thus, no significant trend between K d and pH was observed. At high pH ranges, SPY sorption deviated significantly from linear partitioning. The results suggested the sorption mechanism of these two sulfonamide antibiotics tended to be hydrophobic partitioning under most of the experimental conditions, especially at pH values lower than their corresponding pK a2. The fluorescence excitation emission matrix and dissolved organic carbon leaching test suggested composted manure has higher fulvic acid organics and that peat soil has higher humus-like organics. Small organic molecules showed stronger affinity toward sulfonamide antibiotics and cause the composted manure to exhibit higher sorption capacity. Overall, this study suggests that the chemical structure and properties of sulfonamides antibiotics and the type of organic matter in soils will greatly influence the fate and transport of these contaminants into the environment. Copyright © 2017 Elsevier Ltd. All rights reserved.

  6. Utilization of household food waste for the production of ethanol at high dry material content.

    Science.gov (United States)

    Matsakas, Leonidas; Kekos, Dimitris; Loizidou, Maria; Christakopoulos, Paul

    2014-01-08

    Environmental issues and shortage of fossil fuels have turned the public interest to the utilization of renewable, environmentally friendly fuels, such as ethanol. In order to minimize the competition between fuels and food production, researchers are focusing their efforts to the utilization of wastes and by-products as raw materials for the production of ethanol. household food wastes are being produced in great quantities in European Union and their handling can be a challenge. Moreover, their disposal can cause severe environmental issues (for example emission of greenhouse gasses). On the other hand, they contain significant amounts of sugars (both soluble and insoluble) and they can be used as raw material for the production of ethanol. Household food wastes were utilized as raw material for the production of ethanol at high dry material consistencies. A distinct liquefaction/saccharification step has been included to the process, which rapidly reduced the viscosity of the high solid content substrate, resulting in better mixing of the fermenting microorganism. This step had a positive effect in both ethanol production and productivity, leading to a significant increase in both values, which was up to 40.81% and 4.46 fold, respectively. Remaining solids (residue) after fermentation at 45% w/v dry material (which contained also the unhydrolyzed fraction of cellulose), were subjected to a hydrothermal pretreatment in order to be utilized as raw material for a subsequent ethanol fermentation. This led to an increase of 13.16% in the ethanol production levels achieving a final ethanol yield of 107.58 g/kg dry material. In conclusion, the ability of utilizing household food waste for the production of ethanol at elevated dry material content has been demonstrated. A separate liquefaction/saccharification process can increase both ethanol production and productivity. Finally, subsequent fermentation of the remaining solids could lead to an increase of the overall

  7. Effect of total cementitious content on shear strength of high-volume fly ash concrete beams

    International Nuclear Information System (INIS)

    Arezoumandi, Mahdi; Volz, Jeffery S.; Ortega, Carlos A.; Myers, John J.

    2013-01-01

    Highlights: ► Existing design standards conservatively predicted the capacity of the HVFAC beams. ► In general, the HVFAC beams exceeded the code predicted shear strengths. ► The cementitious content did not have effect on the shear behavior of the HVFAC beams. - Abstract: The production of portland cement – the key ingredient in concrete – generates a significant amount of carbon dioxide. However, due to its incredible versatility, availability, and relatively low cost, concrete is the most consumed manmade material on the planet. One method of reducing concrete’s contribution to greenhouse gas emissions is the use of fly ash to replace a significant amount of the cement. This paper compares two experimental studies that were conducted to investigate the shear strength of full-scale beams constructed with high-volume fly ash concrete (HVFAC) – concrete with at least 50% of the cement replaced with fly ash. The primary difference between the two studies involved the amount of cementitious material, with one mix having a relatively high total cementitious content (502 kg/m 3 ) and the other mix having a relatively low total cementitious content (337 kg/m 3 ). Both mixes utilized a 70% replacement of portland cement with a Class C fly ash. Each of these experimental programs consisted of eight beams (six without shear reinforcing and two with shear reinforcing in the form of stirrups) with three different longitudinal reinforcement ratios. The beams were tested under a simply supported four-point loading condition. The experimental shear strengths of the beams were compared with both the shear provisions of selected standards (US, Australia, Canada, Europe, and Japan) and a shear database of conventional concrete (CC) specimens. Furthermore, statistical data analyses (both parametric and nonparametric) were performed to evaluate whether or not there is any statistically significant difference between the shear strength of both mixes. Results of these

  8. The treatment of large quantities of high fluorin contents UO2 by ammonium double uranate (ADU) techniques

    International Nuclear Information System (INIS)

    Wang Bangwu; Chen Ying

    2010-01-01

    The paper has discussed the sinter action of UO 2 in low temperature. The study indicates the over hot part of UO 2 by the deoxidization hot of oxidation uranate mostly results in the sinter in the process of trans form ADU into UO 2 . The UO 2 settling times in kiln little influences the sinter performance of UO 2 in the same condition of high fluorin contents UO 2 returning kiln, and high fluorin contents UO 2 returning kiln does not sinter UO 2 again. Experiment on large quantities of high fluorin contents UO 2 by Ammonium Double Uranate (ADU) techniques direct returning kiln, the result shows the sinter performance of UO 2 doesn't drop in the process of high fluor in contents UO 2 direct returning kiln, and the performance of UO 2 can meet specification. (authors)

  9. Analysis of 440 GeV proton beam–matter interaction experiments at the High Radiation Materials test facility at CERN

    International Nuclear Information System (INIS)

    Burkart, F.; Schmidt, R.; Wollmann, D.; Raginel, V.; Tahir, N. A.; Shutov, A.; Piriz, A. R.

    2015-01-01

    In a previous paper [Schmidt et al., Phys. Plasmas 21, 080701 (2014)], we presented the first results on beam–matter interaction experiments that were carried out at the High Radiation Materials test facility at CERN. In these experiments, extended cylindrical targets of solid copper were irradiated with beam of 440 GeV protons delivered by the Super Proton Synchrotron (SPS). The beam comprised of a large number of high intensity proton bunches, each bunch having a length of 0.5 ns with a 50 ns gap between two neighboring bunches, while the length of this entire bunch train was about 7 μs. These experiments established the existence of the hydrodynamic tunneling phenomenon the first time. Detailed numerical simulations of these experiments were also carried out which were reported in detail in another paper [Tahir et al., Phys. Rev. E 90, 063112 (2014)]. Excellent agreement was found between the experimental measurements and the simulation results that validate our previous simulations done using the Large Hadron Collider (LHC) beam of 7 TeV protons [Tahir et al., Phys. Rev. Spec. Top.--Accel. Beams 15, 051003 (2012)]. According to these simulations, the range of the full LHC proton beam and the hadronic shower can be increased by more than an order of magnitude due to the hydrodynamic tunneling, compared to that of a single proton. This effect is of considerable importance for the design of machine protection system for hadron accelerators such as SPS, LHC, and Future Circular Collider. Recently, using metal cutting technology, the targets used in these experiments have been dissected into finer pieces for visual and microscopic inspection in order to establish the precise penetration depth of the protons and the corresponding hadronic shower. This, we believe will be helpful in studying the very important phenomenon of hydrodynamic tunneling in a more quantitative manner. The details of this experimental work together with a comparison with the

  10. High-content screening of small compounds on human embryonic stem cells.

    Science.gov (United States)

    Barbaric, Ivana; Gokhale, Paul J; Andrews, Peter W

    2010-08-01

    Human ES (embryonic stem) cells and iPS (induced pluripotent stem) cells have been heralded as a source of differentiated cells that could be used in the treatment of degenerative diseases, such as Parkinson's disease or diabetes. Despite the great potential for their use in regenerative therapy, the challenge remains to understand the basic biology of these remarkable cells, in order to differentiate them into any functional cell type. Given the scale of the task, high-throughput screening of agents and culture conditions offers one way to accelerate these studies. The screening of small-compound libraries is particularly amenable to such high-throughput methods. Coupled with high-content screening technology that enables simultaneous assessment of multiple cellular features in an automated and quantitative way, this approach is proving powerful in identifying both small molecules as tools for manipulating stem cell fates and novel mechanisms of differentiation not previously associated with stem cell biology. Such screens performed on human ES cells also demonstrate the usefulness of human ES/iPS cells as cellular models for pharmacological testing of drug efficacy and toxicity, possibly a more imminent use of these cells than in regenerative medicine.

  11. High content analysis of differentiation and cell death in human adipocytes.

    Science.gov (United States)

    Doan-Xuan, Quang Minh; Sarvari, Anitta K; Fischer-Posovszky, Pamela; Wabitsch, Martin; Balajthy, Zoltan; Fesus, Laszlo; Bacso, Zsolt

    2013-10-01

    Understanding adipocyte biology and its homeostasis is in the focus of current obesity research. We aimed to introduce a high-content analysis procedure for directly visualizing and quantifying adipogenesis and adipoapoptosis by laser scanning cytometry (LSC) in a large population of cell. Slide-based image cytometry and image processing algorithms were used and optimized for high-throughput analysis of differentiating cells and apoptotic processes in cell culture at high confluence. Both preadipocytes and adipocytes were simultaneously scrutinized for lipid accumulation, texture properties, nuclear condensation, and DNA fragmentation. Adipocyte commitment was found after incubation in adipogenic medium for 3 days identified by lipid droplet formation and increased light absorption, while terminal differentiation of adipocytes occurred throughout day 9-14 with characteristic nuclear shrinkage, eccentric nuclei localization, chromatin condensation, and massive lipid deposition. Preadipocytes were shown to be more prone to tumor necrosis factor alpha (TNFα)-induced apoptosis compared to mature adipocytes. Importantly, spontaneous DNA fragmentation was observed at early stage when adipocyte commitment occurs. This DNA damage was independent from either spontaneous or induced apoptosis and probably was part of the differentiation program. © 2013 International Society for Advancement of Cytometry. Copyright © 2013 International Society for Advancement of Cytometry.

  12. G protein-coupled receptor internalization assays in the high-content screening format.

    Science.gov (United States)

    Haasen, Dorothea; Schnapp, Andreas; Valler, Martin J; Heilker, Ralf

    2006-01-01

    High-content screening (HCS), a combination of fluorescence microscopic imaging and automated image analysis, has become a frequently applied tool to study test compound effects in cellular disease-modeling systems. This chapter describes the measurement of G protein-coupled receptor (GPCR) internalization in the HCS format using a high-throughput, confocal cellular imaging device. GPCRs are the most successful group of therapeutic targets on the pharmaceutical market. Accordingly, the search for compounds that interfere with GPCR function in a specific and selective way is a major focus of the pharmaceutical industry today. This chapter describes methods for the ligand-induced internalization of GPCRs labeled previously with either a fluorophore-conjugated ligand or an antibody directed against an N-terminal tag of the GPCR. Both labeling techniques produce robust assay formats. Complementary to other functional GPCR drug discovery assays, internalization assays enable a pharmacological analysis of test compounds. We conclude that GPCR internalization assays represent a valuable medium/high-throughput screening format to determine the cellular activity of GPCR ligands.

  13. Breeding bread wheat cultivars for high protein content by transfer of protein genes from Triticum dicoccoides

    International Nuclear Information System (INIS)

    Grama, A.; Gerechter-Amitai, Z.K.; Blum, A.; Rubenthaler, G.L.

    1984-01-01

    Triticum dicoccoides sel. G-25, a selection of wild emmer with a protein content of 20.5% and a kernel weight of 31.5 mg, was used as the donor of protein genes. Since this selection is highly resistant to stripe rust, the object of the crossing programme was to transfer this resistance, together with the high protein potential, to durum and bread wheat cultivars susceptible to the disease. In the tetraploid lines obtained from the T. dicoccoides/T. durum cross, the protein values ranged from 17 to 22%. These lines had resistance to stripe rust from the wild emmer and to stem rust from the durum. After two further crosses between these tetraploid lines and T. aestivum cultivars, several lines were selected which combined good yield, high protein level and resistance to rust diseases. These lines attained protein levels of 14 to 19% in the whole grain and 14 to 17% in the flour, combined with yields of 4.5 to 6.0 t/ha. They had also inherited resistance to stem rust, and in some instances also to leaf rust, from the cultivated wheat parental lines. (author)

  14. A high content, high throughput cellular thermal stability assay for measuring drug-target engagement in living cells.

    Science.gov (United States)

    Massey, Andrew J

    2018-01-01

    Determining and understanding drug target engagement is critical for drug discovery. This can be challenging within living cells as selective readouts are often unavailable. Here we describe a novel method for measuring target engagement in living cells based on the principle of altered protein thermal stabilization / destabilization in response to ligand binding. This assay (HCIF-CETSA) utilizes high content, high throughput single cell immunofluorescent detection to determine target protein levels following heating of adherent cells in a 96 well plate format. We have used target engagement of Chk1 by potent small molecule inhibitors to validate the assay. Target engagement measured by this method was subsequently compared to target engagement measured by two alternative methods (autophosphorylation and CETSA). The HCIF-CETSA method appeared robust and a good correlation in target engagement measured by this method and CETSA for the selective Chk1 inhibitor V158411 was observed. However, these EC50 values were 23- and 12-fold greater than the autophosphorylation IC50. The described method is therefore a valuable advance in the CETSA method allowing the high throughput determination of target engagement in adherent cells.

  15. High-x sub T single-spin asymmetry in. pi. sup 0 and. eta. production at x sub F =0 by 200 GeV polarized antiprotons and protons

    Energy Technology Data Exchange (ETDEWEB)

    Adams, D L; Akchurin, N; Belikov, N I; Bystricky, J; Corcoran, M D; Cossairt, J D; Cranshaw, J; Derevschikov, A A; En' yo, H; Funahashi, H; Goto, Y; Grachov, O A; Grosnick, D P; Hill, D A; Imai, K; Itow, Y; Iwatani, K; Krueger, K W; Kuroda, K; Laghai, M; Lehar, F; Lesquen, A de; Lopiano, D; Luehring, F C; Maki, T; Makino, S; Masaike, A; Matulenko, Yu A; Meschanin, A P; Michalowicz, A; Miller, D H; Miyake, K; Nagamine, T; Nessi-Tedaldi, F; Nessi, M; Nguyen, C; Nurushev, S B; Ohashi, Y; Onel, Y; Patalakha, D I; Pauletta, G; Penzo, A; Read, A L; Roberts, J B; Van Rossum, L; Rykov, V L; Saito, N; Salvato, G; Schiavon, P; Skeens, J; Solovyanov, V L; Spinka, H; Takashima, R; Takeutchi, F; Tamura, N; Tanaka, N; Underwood, D G; Vasiliev, A N; Villari, A; White, J L; Yamashita, S; Yokosawa, A; Yoshida, T; Zanetti, A [T.W. Bonner Nuclear Lab., Rice Univ., Houston, TX (United States) Dept. of Physics, Univ. Iowa, Iowa City, IA (Unite; FNAL E704 Collaboration

    1992-02-20

    A measurement of the single-spin asymmetry A{sub N} in p{up arrow}+p{yields}{pi}{sup 0}+X at 200 GeV with x{sub F}=0 shows a transition in the production process from a 'low-x{sub T}' regime with A{sub N}=0, through an intermediate region of negative asymmetry, to a 'high-x{sub T}' regime with A{sub N}>0.3. This transition occurs at x{sub T}{approx equal}0.4 and is consistent with x{sub T}-scaling of A{sub N} in pion production using polarized beams or targets from {radical}-s=5.2 to 19.4 GeV. Results for A{sub N} in {eta} production by polarized protons and in {pi}{sup 0} production by polarized antiprotons are also presented. (orig.).

  16. Energy levels of germanium, Ge I through Ge XXXII

    International Nuclear Information System (INIS)

    Sugar, J.; Musgrove, A.

    1993-01-01

    Atomic energy levels of germanium have been compiled for all stages of ionization for which experimental data are available. No data have yet been published for Ge VIII through Ge XIII and Ge XXXII. Very accurate calculated values are compiled for Ge XXXI and XXXII. Experimental g-factors and leading percentages from calculated eigenvectors of levels are given. A value for the ionization energy, either experimental when available or theoretical, is included for the neutral atom and each ion. section

  17. Determination of oxygen content in high T/sub c/ superconductors by a charged particle activation method

    International Nuclear Information System (INIS)

    Tao, Z.; Alburger, D.E.; Jones, K.W.; Yao, Y.D.; Kao, Y.H.

    1988-01-01

    A new method for determining the oxygen content in high T/sub c/ superconductors has been demonstrated using a charged particle activation technique. This method allows a measurement of the concentration of 16 O atoms in the superconducting material by detection of the 17 F produced with the 16 O(d,n) 17 F nuclear reaction. By way of example, this technique is applied to the determination of oxygen content in a series of high T/sub c/ Y-Ba-Cu-O samples in which the stoichiometry is varied by reducing the copper concentration. The stabilized oxygen content shows a nonlinear dependence on the copper deficiency in these specimens

  18. Wild plants as tools for the remediation of abandoned mining sites with a high arsenic content

    Science.gov (United States)

    Martínez-Lopez, Salvadora; Martínez-Sanchez, MJose; Perez-Sirvent, Carmen; Martínez, Lucia B.; Bech, Jaume

    2014-05-01

    The aim of this study was to assess the environmental risk posed by arsenic when new vegetation types are introduced, analyzing the transfer of arsenic in different plant species that grow spontaneously in mining areas of SE Spain (Sierra Minera of Cartagena), and the contribution of such plants to the environmental risk represented by their ingestion by animals living in the same ecosystems. When dealing with remediation projects in zones affected by mining activities, the risk posed by the ingestion of the plants by fauna is often forgotten. To study the transfer to the trophic chain, two mammals, sheep and vole, were selected. The risk analysis was centered in the contribution of these natural plants to the ingestion calculated. For this study, 21 vegetal species naturally growing in the soils were collected from the Sierra Minera. The vegetal material studied is clearly associated with the Mediterranean Region (S.E. of Spain) and the plant species collected are endemisms and plants characteristic of the zone. Physico-chemical properties were obtained by means of the usual procedures. To determine the arsenic content, the soil samples and plant materials were digested in a microwave system and the arsenic concentration was determined using atomic fluorescence spectrometry with an automated continuous flow hydride generation system. A semiquantitative estimation of the mineralogical composition of the samples was made by X Ray Diffraction analysis. The soils were classified into three groups: Low (group 1) (7-35 mg/kg) medium (group 2) (35-327 mg/kg) and high (group 3) (> 327 mg/kg), according to their As content. The mineralogy and As content of the soils studied depends on the materials related with mining activity. The descriptive statistical analysis of the population of plants studied showed the As range in roots to be 0.31-150 mg/kg while leaf concentrations were lower (0.21-83.4 mg/kg). The potential risk of As entering the food chain through of the plant

  19. Aromatic claw: A new fold with high aromatic content that evades structural prediction: Aromatic Claw

    Energy Technology Data Exchange (ETDEWEB)

    Sachleben, Joseph R. [Biomolecular NMR Core Facility, University of Chicago, Chicago Illinois; Adhikari, Aashish N. [Department of Chemistry, University of Chicago, Chicago Illinois; Gawlak, Grzegorz [Department of Biochemistry and Molecular Biology, University of Chicago, Chicago Illinois; Hoey, Robert J. [Department of Biochemistry and Molecular Biology, University of Chicago, Chicago Illinois; Liu, Gaohua [Northeast Structural Genomics Consortium (NESG), Department of Molecular Biology and Biochemistry, School of Arts and Sciences, and Department of Biochemistry and Molecular Biology, Robert Wood Johnson Medical School, and Center for Advanced Biotechnology and Medicine, Rutgers, The State University of New Jersey, Piscataway New Jersey; Joachimiak, Andrzej [Department of Biochemistry and Molecular Biology, University of Chicago, Chicago Illinois; Biological Sciences Division, Argonne National Laboratory, Argonne Illinois; Montelione, Gaetano T. [Northeast Structural Genomics Consortium (NESG), Department of Molecular Biology and Biochemistry, School of Arts and Sciences, and Department of Biochemistry and Molecular Biology, Robert Wood Johnson Medical School, and Center for Advanced Biotechnology and Medicine, Rutgers, The State University of New Jersey, Piscataway New Jersey; Sosnick, Tobin R. [Department of Biochemistry and Molecular Biology, University of Chicago, Chicago Illinois; Koide, Shohei [Department of Biochemistry and Molecular Biology, University of Chicago, Chicago Illinois; Department of Biochemistry and Molecular Pharmacology and the Perlmutter Cancer Center, New York University School of Medicine, New York New York

    2016-11-10

    We determined the NMR structure of a highly aromatic (13%) protein of unknown function, Aq1974 from Aquifex aeolicus (PDB ID: 5SYQ). The unusual sequence of this protein has a tryptophan content five times the normal (six tryptophan residues of 114 or 5.2% while the average tryptophan content is 1.0%) with the tryptophans occurring in a WXW motif. It has no detectable sequence homology with known protein structures. Although its NMR spectrum suggested that the protein was rich in β-sheet, upon resonance assignment and solution structure determination, the protein was found to be primarily α-helical with a small two-stranded β-sheet with a novel fold that we have termed an Aromatic Claw. As this fold was previously unknown and the sequence unique, we submitted the sequence to CASP10 as a target for blind structural prediction. At the end of the competition, the sequence was classified a hard template based model; the structural relationship between the template and the experimental structure was small and the predictions all failed to predict the structure. CSRosetta was found to predict the secondary structure and its packing; however, it was found that there was little correlation between CSRosetta score and the RMSD between the CSRosetta structure and the NMR determined one. This work demonstrates that even in relatively small proteins, we do not yet have the capacity to accurately predict the fold for all primary sequences. The experimental discovery of new folds helps guide the improvement of structural prediction methods.

  20. The high-ion content and kinematics of low-redshift Lyman limit systems

    International Nuclear Information System (INIS)

    Fox, Andrew J.; Tumlinson, Jason; Bordoloi, Rongmon; Lehner, Nicolas; Howk, J. Christopher; Tripp, Todd M.; Katz, Neal; Prochaska, J. Xavier; Werk, Jessica K.; O'Meara, John M.; Oppenheimer, Benjamin D.; Davé, Romeel

    2013-01-01

    We study the high-ion content and kinematics of the circumgalactic medium around low-redshift galaxies using a sample of 23 Lyman limit systems (LLSs) at 0.08 < z < 0.93 observed with the Cosmic Origins Spectrograph on board the Hubble Space Telescope. In Lehner et al., we recently showed that low-z LLSs have a bimodal metallicity distribution. Here we extend that analysis to search for differences between the high-ion and kinematic properties of the metal-poor and metal-rich branches. We find that metal-rich LLSs tend to show higher O VI columns and broader O VI profiles than metal-poor LLSs. The total H I line width (Δv 90 statistic) in LLSs is not correlated with metallicity, indicating that the H I kinematics alone cannot be used to distinguish inflow from outflow and gas recycling. Among the 17 LLSs with O VI detections, all but two show evidence of kinematic sub-structure, in the form of O VI-H I centroid offsets, multiple components, or both. Using various scenarios for how the metallicities in the high-ion and low-ion phases of each LLS compare, we constrain the ionized hydrogen column in the O VI phase to lie in the range log N(H II) ∼ 17.6-20. The O VI phase of LLSs is a substantial baryon reservoir, with M(high-ion) ∼ 10 8.5-10.9 (r/150 kpc) 2 M ☉ , similar to the mass in the low-ion phase. Accounting for the O VI phase approximately doubles the contribution of low-z LLSs to the cosmic baryon budget.