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Sample records for high frequency dielectric

  1. Dielectric and acoustical high frequency characterisation of PZT thin films

    International Nuclear Information System (INIS)

    Conde, Janine; Muralt, Paul

    2010-01-01

    Pb(Zr, Ti)O 3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  2. Dielectric and acoustical high frequency characterisation of PZT thin films

    Science.gov (United States)

    Conde, Janine; Muralt, Paul

    2010-02-01

    Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  3. Modeling the dielectric logging tool at high frequency

    International Nuclear Information System (INIS)

    Chew, W.C.

    1987-01-01

    The high frequency dielectric logging tool has been used widely in electromagnetic well logging, because by measuring the dielectric constant at high frequencies (1 GHz), the water saturation of rocks could be known without measuring the water salinity in the rocks. As such, it could be used to delineate fresh water bearing zones, as the dielectric constant of fresh water is much higher than that of oil while they may have the same resistivity. The authors present a computer model, though electromagnetic field analysis, the response of such a measurement tool in a well logging environment. As the measurement is performed at high frequency, usually with small separation between the transmitter and receivers, some small geological features could be measured by such a tool. They use the computer model to study the behavior of such a tool across geological bed boundaries, and also across thin geological beds. Such a study could be very useful in understanding the limitation on the resolution of the tool. Furthermore, they could study the standoff effect and the depth of investigation of such a tool. This could delineate the range of usefulness of the measurement

  4. Dielectric and acoustical high frequency characterisation of PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Conde, Janine; Muralt, Paul, E-mail: janine.conde@epfl.ch [Department of Materials Science, EPFL (Switzerland)

    2010-02-15

    Pb(Zr, Ti)O{sub 3} (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {l_brace}100{r_brace} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

  5. High-frequency dielectric properties of nanocomposite and ceramic titanates

    Czech Academy of Sciences Publication Activity Database

    Rinkevich, A.B.; Kuznetsov, E. A.; Perov, D.V.; Bovtun, Viktor; Kempa, Martin; Nuzhnyy, Dmitry; Savinov, Maxim; Samoilovich, M.I.; Klescheva, S.M.; Ryabkov, Y.I.; Tsvetkova, E.V.

    2015-01-01

    Roč. 14, č. 3 (2015), s. 585-592 ISSN 1536-125X R&D Projects: GA ČR GAP204/12/0232 Institutional support: RVO:68378271 Keywords : electromagnetic waveguide * opal matrix * transmission and reflection coefficients * microwave conductivity * dielectric spectra Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.702, year: 2015

  6. Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies

    International Nuclear Information System (INIS)

    Lu, Y.; Ziani, A.; Le Paven-Thivet, C.; Benzerga, R.; Le Gendre, L.; Fasquelle, D.; Kassem, H.

    2011-01-01

    Lanthanum titanium oxynitride (LaTiO x N y ) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO x N y thin films deposited on conductive single crystal Nb–STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiO x N y polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO 2 /Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO x N y films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).

  7. Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

    Energy Technology Data Exchange (ETDEWEB)

    Le Paven, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Lu, Y. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Nguyen, H.V. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); CEA LETI, Minatec Campus, 38054 Grenoble (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Rioual, S. [Laboratoire de Magnétisme de Brest (EA CNRS 4522), Université de Bretagne Occidentale, 29000 Brest (France); Benzegoutta, D. [Institut des Nanosciences de Paris (INSP, UMR CNRS 7588), Université Pierre et Marie Curie, 75005 Paris (France); Tessier, F.; Cheviré, F. [Institut des Sciences Chimiques de Rennes (ISCR, UMR-CNRS 6226), Equipe Verres et Céramiques, Université de Rennes 1, 35000 Rennes (France); and others

    2014-02-28

    Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO{sub 3} and Pt(111)/TiO{sub 2}/SiO{sub 2}/(001)Si substrates by RF magnetron sputtering, using a La{sub 2}Ti{sub 2}O{sub 7} homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La{sub 2}Ti{sub 2}O{sub 7} films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti{sup 4+} ions, with no trace of Ti{sup 3+}, and provides a La/Ti ratio of 1.02. The depositions being performed from a La{sub 2}Ti{sub 2}O{sub 7} target under oxygen rich plasma, the same composition (La{sub 2}Ti{sub 2}O{sub 7}) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2{sub 1} space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO{sub 3} substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La{sub 2}Ti{sub 2}O{sub 7} orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La{sub 2}Ti{sub 2}O{sub 7} films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La{sub 2}Ti{sub 2}O{sub 7} chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing.

  8. Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

    International Nuclear Information System (INIS)

    Le Paven, C.; Lu, Y.; Nguyen, H.V.; Benzerga, R.; Le Gendre, L.; Rioual, S.; Benzegoutta, D.; Tessier, F.; Cheviré, F.

    2014-01-01

    Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO 3 and Pt(111)/TiO 2 /SiO 2 /(001)Si substrates by RF magnetron sputtering, using a La 2 Ti 2 O 7 homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La 2 Ti 2 O 7 films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti 4+ ions, with no trace of Ti 3+ , and provides a La/Ti ratio of 1.02. The depositions being performed from a La 2 Ti 2 O 7 target under oxygen rich plasma, the same composition (La 2 Ti 2 O 7 ) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2 1 space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO 3 substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La 2 Ti 2 O 7 orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La 2 Ti 2 O 7 films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La 2 Ti 2 O 7 chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing

  9. Terahertz-frequency dielectric response of liquids

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Møller, Uffe; Cooke, David

    The dielectric response of liquids spans many decades in frequency. The dielectric response of a polar liquid is typically determined by relaxational dynamics of the dipolar moments of the liquid. In contrast, the dielectric response of a nonpolar liquid is determined by much weaker collision......-induced dipole moments. In the polar liquid water the fastest relaxational dynamics is found at terahertz frequencies, just below the first intermolecular vibrational and librational modes. In this presentation we will discuss optical terahertz spectroscopic techniques for measurement of the full dielectric...... function of liquids at terahertz frequencies. We will review the current understanding of the high-frequency dielectric spectrum of water, and discuss the relation between the dielectric spectrum and the thermodynamic properties of certain aqueous solutions....

  10. Experimental study of dielectric characteristics of rocks in a high-frequency field

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, S.

    1982-01-01

    Dielectric permeability (epsilon) as an electrical property of rocks has been used in recent years as the new parameter of well logging. Consequently a study was made of the dependence of epsilon of rocks on different factors. It was found that epsilon of rocks depends not only on minerals contained in them, their properties and distribution, but also on the frequency of the field, temperature and content of the mineralized water in the bed. It was indicated that for sedimentary rocks with low content of clay, their epsilon depends mainly on the content of water, and between epsilon and water saturation there is an approximately rectilinear relationship. The epsilon of dry and wet rocks differs 3-5-fold, so that with the help of epsilon one can determine flooding of the bed. Since epsilon increases with a rise in the content of clay in the rocks, with dielectric logging of the flooded bed it is necessary to make the corresponding correction. Under conditions of frequency of the field 60 Mz, epsilon in the NaCl solution decreases with an increase in mineralization, but the epsilon of the soda-containing rocks increases with an increase in mineralization. However, with mineralization less than 1 x 10/sup -2/, its influence on epsilon does not exceed 10%. The epsilon of water containing rocks diminishes with a rise in temperature. In addition, the epsilon of rocks drops with an increase in field frequency. With an increase in frequency, there is a decrease in influence of different factors (mineralization, distribution of minerals, content of clay, etc.) on the epsilon of rocks. At high frequencies, a distinct relationship is observed only between the epsilon and the water content of the rocks. Consequently it is expedient to improve the frequency of measurement to reveal the flooded beds. According to the data of dispersion of epsilon with different frequencies, one can determine the content of quality of the bed using electromagnetic logging.

  11. Visible-Frequency Dielectric Metasurfaces for Multiwavelength Achromatic and Highly Dispersive Holograms.

    Science.gov (United States)

    Wang, Bo; Dong, Fengliang; Li, Qi-Tong; Yang, Dong; Sun, Chengwei; Chen, Jianjun; Song, Zhiwei; Xu, Lihua; Chu, Weiguo; Xiao, Yun-Feng; Gong, Qihuang; Li, Yan

    2016-08-10

    Dielectric metasurfaces built up with nanostructures of high refractive index represent a powerful platform for highly efficient flat optical devices due to their easy-tuning electromagnetic scattering properties and relatively high transmission efficiencies. Here we show visible-frequency silicon metasurfaces formed by three kinds of nanoblocks multiplexed in a subwavelength unit to constitute a metamolecule, which are capable of wavefront manipulation for red, green, and blue light simultaneously. Full phase control is achieved for each wavelength by independently changing the in-plane orientations of the corresponding nanoblocks to induce the required geometric phases. Achromatic and highly dispersive meta-holograms are fabricated to demonstrate the wavefront manipulation with high resolution. This technique could be viable for various practical holographic applications and flat achromatic devices.

  12. High-frequency dielectric study of proustite crystals Ag3AsS3

    Science.gov (United States)

    Bordovsky, V. A.; Gunia, N. Yu; Castro, R. A.

    2014-12-01

    The dielectric properties of the crystals proustite in the frequency of 106-109 Hz and a temperature range of 173 to 473 K were studied. The dispersion of the dielectric parameters indicates the existence of non-Debye relaxation mechanism correlates with structural changes in the phase transition region. The charge transfer is temperature activated with an activation energy of 2.40 ± 0.01 eV.

  13. High frequency dielectric reference materials BCR projekt 43. Final report of phase 1

    International Nuclear Information System (INIS)

    Chantry, G.

    1980-01-01

    The Group of High Frequency Specialists from Belgium, France, Germany, The Netherlands and the UK, was awarded contracts in 1975 to carry out a programme of measurements on the high frequency dielectric properties of materials. The object of this first phase of a projected three phase programme was to establish the reliability of existing methods of measurement and to examine the possibilities of specifying and producing some standard reference materials, both liquid and solid, which could be used for calibrating and checking the performance of industrial measurement equipment. The liquids chosen for the first phase were cyclohexane, cis and trans decalin, chlorobenzene and 0.1, 1, and 10% solutions of chlorobenzene in cyclohexane. Each group had a limited frequency range over which it could make meaningful measurements but there was sufficient overlap to ensure that all random and systematic errors could be quantitatively assayed. The real (epsilon') and imaginary (epsilon'') components of the complex permittivity for all the liquids were measured over the frequency range 10 - 3,000 GHz and for the two most lossy liquids (chlorobenzene and 10% chlorobenzene in cyclohexane) this range was extended downwards to one GHz. The programme established for the first time the possible experimental imprecisions to be expected in high frequency dielecric measurements and showed that the chosen liquids could be useful standard reference materials if sufficiently pure specimens could be obtained commercially at a reasonable price. The programme did however reveal an unexpected snag in that the liquids, especially cyclohexane, were found to be rather more liable to contamination than expected. Since cyclohexane is a very low-loss liquid, only a small amount of a lossy contaminant need be absorbed to make the observed loss increase dramatically. This report contains all the measured results in both tabular and graphical form and in addition full technical details are given of the

  14. Thermal Conductivity and High-Frequency Dielectric Properties of Pressureless Sintered SiC-AlN Multiphase Ceramics

    Directory of Open Access Journals (Sweden)

    Jialin Gu

    2018-06-01

    Full Text Available SiC-AlN multiphase ceramics with 10 wt. %Y2O3-BaO-SiO2 additives were fabricated by pressureless sintering in a nitrogen atmosphere. The effects of SiC contents and sintering temperatures on the sinterability, microstructure, thermal conductivity and high-frequency dielectric properties were characterized. In addition to 6H-SiC and AlN, the samples also contained Y3Al5O12 and Y4Al2O9. SiC-AlN ceramics sintered with 50 wt. % SiC at 2173 K exhibited the best thermal diffusivity and thermal conductivity (26.21 mm2·s−1 and 61.02 W·m−1·K−1, respectively. The dielectric constant and dielectric loss of the sample sintered with 50 wt. % SiC and 2123 K were 33–37 and 0.4–0.5 at 12.4–18 GHz. The dielectric constant and dielectric loss of the samples decreased as the frequency of electromagnetic waves increased from 12.4–18 GHz. The dielectric thermal conductivity properties of the SiC-AlN samples are discussed.

  15. Potential applications of high-frequency dielectric heating in mechanical forest industry in Finland. Suurtaajuuskuivauksen kaeyttoemahdollisuudet mekaanisessa metsaeteollisuudessa

    Energy Technology Data Exchange (ETDEWEB)

    Siimes, H.; Tarvainen, V.; Peraeniitty, M.

    1986-10-01

    The present study of potential applications of dielectric technology in wood drying was made by using availaable literature and contacting experts and equipment manufacturers. The report gives an account of drying results and equipment applications. It also includes an overview of the principles of high-frequency drying, the equipment required for high-frequency energy production and the dielectric properties of wood. In conclusion, the economy of high-frequency drying and factors which influence it are evaluated and the most economic applications are defined. In high-frequency drying, wood warms up the most in interior sections with a high moisture content. The risk for overdrying of the surface is thus small, and the wood dries much faster than in convective drying. To be economic, the high capital and energy costs of high-frequency drying should be compensated by fewer drying defects, a higher yield in the final use of the wood, higher storehouse throughput, speedier deliveries and lower total energy consumption. Other characteristic features of economic high-frequency drying are that only a small amount of moisture is removed and the wood is thick, difficult to dry and expensive. High-frequency applications which merit further study in Finland are drying of thick joinery-quality sawn goods and redrying of veneers and chips.

  16. Identifying dielectric and resistive electrode losses in high-density capacitors at radio frequencies

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Liu, J.; Klee, M.; Keur, W.; Mauczock, R.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2008-01-01

    A regression-based technique is presented which distinguishes the dielectric loss from the resistive loss of high density planar capacitors in a very wide bandwidth of 0.1–8 GHz. Moreover, the procedure yields useful results if the capacitor deviates from a lumped element model and indicates when

  17. Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics

    Directory of Open Access Journals (Sweden)

    Nenad Novkovski

    2017-01-01

    Full Text Available Capacitance of metal–insulator–Si structures containing high permittivity dielectric exhibits complicated behaviour when voltage and frequency dependencies are studied. From our study on metal (Al, Au, W–Ta2O5/SiO2–Si structures, we identify serial C-R measurement mode to be more convenient for use than the parallel one usually used in characterization of similar structures. Strong frequency dependence that is not due to real variations in the dielectric permittivity of the layers is observed. Very high capacitance at low frequencies is due to the leakage in Ta2O5 layer. We found that the above observation is mainly due to different leakage current mechanisms in the two different layers composing the stack. The effect is highly dependent on the applied voltage, since the leakage currents are strongly nonlinear functions of the electric field in the layers. Additionally, at low frequencies, transition currents influence the measured value of the capacitance. From the capacitance measurements several parameters are extracted, such as capacitance in accumulation, effective dielectric constant, and oxide charges. Extracting parameters of the studied structures by standard methods in the case of high-κ/interfacial layer stacks can lead to substantial errors. Some cases demonstrating these deficiencies of the methods are presented and solutions for obtaining better results are proposed.

  18. Dielectric and thermal properties of isotactic polypropylene/hexagonal boron nitride composites for high-frequency applications

    International Nuclear Information System (INIS)

    Takahashi, Susumu; Imai, Yusuke; Kan, Akinori; Hotta, Yuji; Ogawa, Hirotaka

    2014-01-01

    Highlights: • The degree of orientation of the hBN could be controlled by the fabrication process. • The dielectric constants of composites ranged between 2.25 and 3.39. • The dielectric loss of composites was on the order of 10 −4 for all compositions. • The thermal conductivity were improved by controlling orientation of hBN. - Abstract: Dielectric composites aimed for high frequency applications were prepared by using anisotropic hexagonal boron nitride (hBN) particles as a fillers and isotactic polypropylene (iPP) as polymer matrix. Dielectric and thermal properties of the composites were studied, focusing on the filler orientation in the plate-shape specimens and filler concentration up to 40 vol%. The degree of orientation of the filler was controlled by the composite fabrication process. Hot-pressing gave relatively random orientation of the filler in the matrix, while injection molding induced a high orientation. Dielectric constant (ε r ) of the composites ranged between 2.25 and 3.39. The estimation of ε r based on the Bruggeman mixing model agreed well with the measured value. Low dielectric losses (tan δ) at microwave frequencies, on the order of 10 −4 , were obtained for all the compositions. Through-thickness thermal conductivity (k) of the hot-pressed samples showed a drastic increase with increasing the filler concentration, reaching up to 2.1 W/m K at 40 vol% of hBN. The filler concentration dependence of k was less significant for the injection molded composites. In-plane thermal expansion was almost independent on the filler orientation, while the coefficient of thermal expansion for the thickness direction of the hot-pressed sample was reduced to approximately half of the injection molded counterpart. These differences in thermal conductivity and thermal expansion are thought to arise from the difference in hBN filler orientation

  19. Thermally Stable Siloxane Hybrid Matrix with Low Dielectric Loss for Copper-Clad Laminates for High-Frequency Applications.

    Science.gov (United States)

    Kim, Yong Ho; Lim, Young-Woo; Kim, Yun Hyeok; Bae, Byeong-Soo

    2016-04-06

    We report vinyl-phenyl siloxane hybrid material (VPH) that can be used as a matrix for copper-clad laminates (CCLs) for high-frequency applications. The CCLs, with a VPH matrix fabricated via radical polymerization of resin blend consisting of sol-gel-derived linear vinyl oligosiloxane and bulky siloxane monomer, phenyltris(trimethylsiloxy)silane, achieve low dielectric constant (Dk) and dissipation factor (Df). The CCLs with the VPH matrix exhibit excellent dielectric performance (Dk = 2.75, Df = 0.0015 at 1 GHz) with stability in wide frequency range (1 MHz to 10 GHz) and at high temperature (up to 275 °C). Also, the VPH shows good flame resistance without any additives. These results suggest the potential of the VPH for use in high-speed IC boards.

  20. High-frequency dielectric response of polyaniline pellets as nanocomposites of metallic emeraldine salt and dielectric base

    Czech Academy of Sciences Publication Activity Database

    Nuzhnyy, Dmitry; Petzelt, Jan; Rychetský, Ivan; Trchová, Miroslava; Stejskal, Jaroslav

    2015-01-01

    Roč. 209, Nov (2015), s. 561-569 ISSN 0379-6779 R&D Projects: GA ČR GAP204/12/0232; GA ČR(CZ) GAP205/12/0911 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : polyaniline * infrared and THz spectroscopy * optical conductivity * dielectric permittivity * vibrational mode * effective medium approach Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.299, year: 2015

  1. Study on characteristics of high frequency dielectric barrier discharge for the removal of organic pollutant adsorbed on activated carbon

    Energy Technology Data Exchange (ETDEWEB)

    Qu, G.Z.; Li, G.F. [Dalian Univ. of Technology, Dalian (China). Inst. of Electrostatics and Special Power; Li, J.; Lu, N.; Wu, Y.; Li, D. [Dalian Univ. of Technology, Dalian (China). Inst. of Electrostatics and Special Power; Key Lab of Industrial Ecology and Environmental Engineering, Ministry of Education, Dalian (China)

    2010-07-01

    Advanced oxidation technologies such as photocatalysis, electrochemical degradation, Fenton oxidation, hydrogen peroxide oxidation, and plasma oxidation are increasingly being used to degrade refractory biodegradable organic contaminants. The plasma oxidation method has the advantage of direct in situ production of multiple types of high-reactive chemical species, including molecules and radicals that facilitate the degradation reaction. In addition, plasma oxidation does not produce any secondary pollution. Compared to other plasma technologies, the dielectric barrier discharge (DBD) plasma has been considered as a promising technology for removing toxic compounds because of its stability and its treatability property of biologically recalcitrant compounds in wastewater. However, the energy efficiency of DBD requires improvement for economic reasons. This paper reported on an experimental study that investigated the electrical characteristics of a parallel plate DBD reactor using a high frequency power supply for the removal of pentachlorophenol (PCP) adsorbed on activated carbon (AC). This study examined the effects of AC with different mass on discharge characteristics and compared the voltage and current waveforms, and discharge images of DBD reactors with different dielectric configurations. When the DBD reactor filled with AC, the applied voltage of discharge decreased regardless of the DBD reactor configuration in terms of having a single barrier or two barriers. The discharge characteristics had no significant change with AC mass increasing. The discharge images and current waveforms showed that DBD reactor configuration consisting of two dielectrics is more homogeneous and stable than the one consisting of a single dielectric. Under the same electric field condition, the degradation efficiency of PCP in two barriers reactor is higher than that in single barrier reactor. It was concluded that the findings from this study may be instrumental in treating

  2. High-k 3D-barium titanate foam/phenolphthalein poly(ether sulfone)/cyanate ester composites with frequency-stable dielectric properties and extremely low dielectric loss under reduced concentration of ceramics

    Science.gov (United States)

    Zheng, Longhui; Yuan, Li; Guan, Qingbao; Liang, Guozheng; Gu, Aijuan

    2018-01-01

    Higher dielectric constant, lower dielectric loss and better frequency stability have been the developing trends for high dielectric constant (high-k) materials. Herein, new composites have been developed through building unique structure by using hyperbranched polysiloxane modified 3D-barium titanate foam (BTF) (BTF@HSi) as the functional fillers and phenolphthalein poly(ether sulfone) (cPES)/cyanate ester (CE) blend as the resin matrix. For BTF@HSi/cPES/CE composite with 34.1 vol% BTF, its dielectric constant at 100 Hz is as high as 162 and dielectric loss is only 0.007; moreover, the dielectric properties of BTF@HSi/cPES/CE composites exhibit excellent frequency stability. To reveal the mechanism behind these attractive performances of BTF@HSi/cPES/CE composites, three kinds of composites (BTF/CE, BTF/cPES/CE, BTF@HSi/CE) were prepared, their structure and integrated performances were intensively investigated and compared with those of BTF@HSi/cPES/CE composites. Results show that the surface modification of BTF is good for preparing composites with improved thermal stability; while introducing flexible cPES to CE is beneficial to fabricate composites with good quality through effectively blocking cracks caused by the stress concentration, and then endowing the composites with good dielectric properties at reduced concentration of ceramics.

  3. Perovskite oxynitride LaTiO{sub x}N{sub y} thin films: Dielectric characterization in low and high frequencies

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.; Ziani, A. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Le Paven-Thivet, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Fasquelle, D. [Laboratoire d' Etude des Materiaux et des Composants pour l' Electronique (LEMCEL) UPRES-EA 2601, University of Littoral-Cote d' Opale, 50 rue Ferdinand Buisson, F-62228 Calais cedex (France); Kassem, H. [Laboratoire de l' Integration du Materiau au Systeme(IMS) UMR-CNRS 5218, groupe Materiaux, University of Bordeaux 1, 16 avenue Pey-Berland, 33607 Pessac (France); and others

    2011-11-01

    Lanthanum titanium oxynitride (LaTiO{sub x}N{sub y}) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO{sub x}N{sub y} thin films deposited on conductive single crystal Nb-STO show a dielectric constant {epsilon} Prime Almost-Equal-To 140 with low losses tan{delta} = 0.012 at 100 kHz. For the LaTiO{sub x}N{sub y} polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO{sub 2}/Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO{sub x}N{sub y} films deposited on MgO substrate present a high dielectric constant with low losses ({epsilon} Prime Almost-Equal-To 170, tan{delta} = 0.011, 12 GHz).

  4. Study of HV Dielectrics for High Frequency Operation in Linear & Nonlinear Transmission Lines & Simulation & Development of Hybrid Nonlinear Lines for RF Generation

    Science.gov (United States)

    2015-08-27

    As shown in [4], [5], the capacitors based on PZT (lead-zirconate- titanate) and BT dielectrics have dielectric BD strength of the order of 50 kV/cm...results. Depending on the nonlinearity properties of the capacitor dielectric , input pulse rise time, output pulse sharpening and or RF soliton... capacitors in a frequency range up to 2 MHz, below the resonant frequency of the both dielectrics . As seen in Fig. 1, PZTs have better performance than

  5. Estimating porosity and solid dielectric permittivity in the Miami Limestone using high-frequency ground penetrating radar (GPR) measurements at the laboratory scale

    Science.gov (United States)

    Mount, Gregory J.; Comas, Xavier

    2014-10-01

    Subsurface water flow in South Florida is largely controlled by the heterogeneous nature of the karst limestone in the Biscayne aquifer and its upper formation, the Miami Limestone. These heterogeneities are amplified by dissolution structures that induce changes in the aquifer's material and physical properties (i.e., porosity and dielectric permittivity) and create preferential flow paths. Understanding such patterns are critical for the development of realistic groundwater flow models, particularly in the Everglades, where restoration of hydrological conditions is intended. In this work, we used noninvasive ground penetrating radar (GPR) to estimate the spatial variability in porosity and the dielectric permittivity of the solid phase of the limestone at centimeter-scale resolution to evaluate the potential for field-based GPR studies. A laboratory setup that included high-frequency GPR measurements under completely unsaturated and saturated conditions was used to estimate changes in electromagnetic wave velocity through Miami Limestone samples. The Complex Refractive Index Model was used to derive estimates of porosity and dielectric permittivity of the solid phase of the limestone. Porosity estimates of the samples ranged between 45.2 and 66.0% and showed good correspondence with estimates of porosity using analytical and digital image techniques. Solid dielectric permittivity values ranged between 7.0 and 13.0. This study shows the ability of GPR to image the spatial variability of porosity and dielectric permittivity in the Miami Limestone and shows potential for expanding these results to larger scales and other karst aquifers.

  6. Dielectric properties of materials at microwave frequencies

    Directory of Open Access Journals (Sweden)

    Ivo Křivánek

    2008-01-01

    Full Text Available The paper introduces the review of the present state of art in the measurement of the interaction of electromagnetic waves with different kinds of materials. It is analysis of the possibilities of the mea­surement of the interaction of high frequencies waves (microwaves with materials and proposal of the experimental method for the studies mentioned above.The electromagnetic field consists of two components: electric and magnetic field. The influence of these components on materials is different. The influence of the magnetic field is negligible and it has no impact on practical use. The influence of the electric field is strong as the interaction between them results in the creation of electric currents in the material (Křivánek and Buchar, 1993.Experiments focused on the evaluation of the complex dielectric permitivity of different materials have been performed. The permitivity of solid material is also measurable by phasemethod, when the specimen is a part of transmission sub-circuit. Microwave instrument for complex permittivity measurement works in X frequency band (8.2–12.5 GHz, the frequency 10.1 GHz was used for all the measurement in the laboratory of physics, Mendel University in Brno. The extensive number of experimental data have been obtained for different materials. The length of the square side of the ae­rial open end was 50 mm and internal dimensions of waveguides were 23 mm × 10 mm. The samples have form of the plate shape with dimensions 150 mm × 150 mm × 4 mm.

  7. Dielectric characterization of materials at microwave frequency range

    Directory of Open Access Journals (Sweden)

    J. de los Santos

    2003-01-01

    Full Text Available In this study a coaxial line was used to connect a microwave-frequency Network Analyzer and a base moving sample holder for dielectric characterization of ferroelectric materials in the microwave range. The main innovation of the technique is the introduction of a special sample holder that eliminates the air gap effect by pressing sample using a fine pressure system control. The device was preliminary tested with alumina (Al2O3 ceramics and validated up to 2 GHz. Dielectric measurements of lanthanum and manganese modified lead titanate (PLTM ceramics were carried out in order to evaluate the technique for a high permittivity material in the microwave range. Results showed that such method is very useful for materials with high dielectric permittivities, which is generally a limiting factor of other techniques in the frequency range from 50 MHz to 2 GHz.

  8. Dielectric analysis of aqueous poly(l-glutamic acid and poly-l-(glutamic acid4, Tyrosine1 solutions at high frequencies from capacitance measurements

    Directory of Open Access Journals (Sweden)

    Jorge Monreal

    2016-12-01

    Full Text Available A new parallel-plate capacitor fixture has been designed and successfully used to measure dielectric loss of polyelectrolyte solutions with volumes as low as droplets of 13–26 μL. It is particularly useful when studying polypeptides that are either high-cost or can be synthesized only in limited quantities. The ease with which the fixture can be used to obtain preliminary dielectric loss data yields savings in time and cost. In this study capacitance measurements were performed in a wide range of frequencies between 1 and 800 MHz using an Agilent 4191RF Impedance Analyzer. Accuracy of measurements was carefully examined through a comparison of measured conductivity of 1M NaCl against Stogryn's equation for conductivity. A 0.3% difference between the experimentally measured and theoretically calculated results has been found, demonstrating the validity of the proposed analysis method.

  9. Dielectric measurements on PWB materials at microwave frequencies

    Indian Academy of Sciences (India)

    Unknown

    the angular frequency and c0 the velocity of light, c the thickness of the ... Dielectric parameters, absorption index and refractive index for pure PSF and pure PMMA at 8⋅92 GHz frequency and at 35°C temperature. Dielectric. Dielectric. Loss. Relaxation. Conductivity Absorption. Refractive. Thickness, constant loss tangent.

  10. Core-shell structured polystyrene/BaTiO3 hybrid nanodielectrics prepared by in situ RAFT polymerization: a route to high dielectric constant and low loss materials with weak frequency dependence.

    Science.gov (United States)

    Yang, Ke; Huang, Xingyi; Xie, Liyuan; Wu, Chao; Jiang, Pingkai; Tanaka, Toshikatsu

    2012-11-23

    A novel route to prepare core-shell structured nanocomposites with excellent dielectric performance is reported. This approach involves the grafting of polystyrene (PS) from the surface of BaTiO(3) by an in situ RAFT polymerization. The core-shell structured PS/BaTiO(3) nanocomposites not only show significantly increased dielectric constant and very low dielectric loss, but also have a weak frequency dependence of dielectric properties over a wide range of frequencies. In addition, the dielectric constant of the nanocomposites can also be easily tuned by varying the thickness of the PS shell. Our method is very promising for preparing high-performance nanocomposites used in energy-storage devices. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. A model for the scattering of high-frequency electromagnetic fields from dielectrics exhibiting thermally-activated electrical losses

    Science.gov (United States)

    Hann, Raiford E.

    1991-01-01

    An equivalent circuit model (ECM) approach is used to predict the scattering behavior of temperature-activated, electrically lossy dielectric layers. The total electrical response of the dielectric (relaxation + conductive) is given by the ECM and used in combination with transmission line theory to compute reflectance spectra for a Dallenbach layer configuration. The effects of thermally-activated relaxation processes on the scattering properties is discussed. Also, the effect of relaxation and conduction activation energy on the electrical properties of the dielectric is described.

  12. Effect of ZrO2 on the sintering behavior, strength and high-frequency dielectric properties of electrical ceramic porcelain insulator

    Science.gov (United States)

    Singh Mehta, Niraj; Sahu, Praveen Kumar; Ershad, Md; Saxena, Vipul; Pyare, Ram; Ranjan Majhi, Manas

    2018-01-01

    In the present study, the effect of ZrO2 on the sintering, strength and dielectric behavior of electrical ceramic porcelain insulator with substituting alumina content by zirconia (in weight percentage from 0% to 30%) is investigated. The different composition of samples containing different zirconia (ZrO2) contents of 0, 10, 20, and 30 wt% are prepared using the uniaxial pressure technique applying 160 MPa pressure. Further, the prepared samples are also analyzed for sintering temperatures (1350 °C), and effects are observed on mechanical and electric properties of porcelain insulator. Different characterizations such as Dilatometer, x-ray diffraction, scanning electron microscopy and differential thermal analysis/thermo gravimetric analysis were used to evaluate the thermal, phase detection, micro structural and weight loss changes by increasing concentration of ZrO2 on base porcelain composition. At 1350 °C, for the composition having 20 wt% ZrO2 with 10 wt% alumina, the maximum density was observed 2.81 g cm-3 with a porosity of 2.23%. The highest tensile strength of 41 ± 3 MPa is observed for the same sample composition. The minimum value of thermal expansion coefficient is found to be in the range of 10-6 for the sample with 30 wt% ZrO2 content sintered at 1350 °C compared to other prepared samples. Similarly, the highest dielectric value (5.1-4.4) having dielectric loss (0.08-0.12) is achieved for the sample with 30 wt% ZrO2 content sintered at 1350 °C in the frequency range of 4-20 GHz at room temperature. According to the mechanical properties, the composition having 20 wt% ZrO2 on base ceramic porcelain composition has enormous potential to serve as a high strength refractory material. For dielectric properties, the composition having 30 wt% ZrO2 is more suitable for the electrical application.

  13. Frequency and temperature dependence of dielectric properties of chicken meat

    Science.gov (United States)

    Dielectric properties of chicken breast meat were measured with an open-ended coaxial-line probe between 200 MHz and 20 GHz at temperatures ranging from -20 degree C to +25 degree C. At a given temperature, the frequency dependence of the dielectric constant reveals two relaxations while those of th...

  14. Transformation Algorithm of Dielectric Response in Time-Frequency Domain

    Directory of Open Access Journals (Sweden)

    Ji Liu

    2014-01-01

    Full Text Available A transformation algorithm of dielectric response from time domain to frequency domain is presented. In order to shorten measuring time of low or ultralow frequency dielectric response characteristics, the transformation algorithm is used in this paper to transform the time domain relaxation current to frequency domain current for calculating the low frequency dielectric dissipation factor. In addition, it is shown from comparing the calculation results with actual test data that there is a coincidence for both results over a wide range of low frequencies. Meanwhile, the time domain test data of depolarization currents in dry and moist pressboards are converted into frequency domain results on the basis of the transformation. The frequency domain curves of complex capacitance and dielectric dissipation factor at the low frequency range are obtained. Test results of polarization and depolarization current (PDC in pressboards are also given at the different voltage and polarization time. It is demonstrated from the experimental results that polarization and depolarization current are affected significantly by moisture contents of the test pressboards, and the transformation algorithm is effective in ultralow frequency of 10−3 Hz. Data analysis and interpretation of the test results conclude that analysis of time-frequency domain dielectric response can be used for assessing insulation system in power transformer.

  15. Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics.

    Science.gov (United States)

    Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

    2016-09-20

    progress. An accurate and efficient theoretical computational approach could drastically decrease this time by screening potential dielectric materials and providing reliable design rules for future molecular dielectrics. Until recently, accurate calculation of dielectric responses in molecular materials was difficult and highly approximate. Most previous modeling efforts relied on classical formalisms to relate molecular polarizability to macroscopic dielectric properties. These efforts often vastly overestimated polarizability in the subject materials and ignored crucial material properties that can affect dielectric response. Recent advances in first-principles calculations via density functional theory (DFT) with periodic boundary conditions have allowed accurate computation of dielectric properties in molecular materials. In this Account, we outline the methodology used to calculate dielectric properties of molecular materials. We demonstrate the validity of this approach on model systems, capturing the frequency dependence of the dielectric response and achieving quantitative accuracy compared with experiment. This method is then used as a guide to new high-capacitance molecular dielectrics by determining what materials and chemical properties are important in maximizing dielectric response in self-assembled monolayers (SAMs). It will be seen that this technique is a powerful tool for understanding and designing new molecular dielectric systems, the properties of which are fundamental to many scientific areas.

  16. Small-signal analysis and particle-in-cell simulations of planar dielectric Cherenkov masers for use as high-frequency, moderate-power broadband amplifiers

    International Nuclear Information System (INIS)

    Carlsten, Bruce E.

    2002-01-01

    A small-signal gain analysis of the planar dielectric Cherenkov maser is presented. The analysis results in a Pierce gain solution, with three traveling-wave modes. The analysis shows that the dielectric Cherenkov maser has a remarkable broadband tuning ability near cutoff, while maintaining reasonable gain rates. Numerical simulations verifying the small-signal gain results are presented, using a particle-in-cell code adapted specifically for planar traveling-wave tubes. An instantaneous bandwidth is numerically shown to be very large, and saturated efficiency for a nominal high-power design is shown to be in the range of standard untapered traveling-wave tubes

  17. Dielectric properties of polycrystalline Cu-Zn ferrites at microwave frequencies

    International Nuclear Information System (INIS)

    Lamani, Ashok R.; Jayanna, H.S.; Parameswara, P.; Somashekar, R.; Ramachander,; Rao, Ramchandra; Prasanna, G.D.

    2011-01-01

    Highlights: → Cu 1-x Zn x Fe 2 O 4 at different concentration are suitable for high frequency applications. → Dielectric properties are related with W-H plot. → The anisotropy due to the crystallite size effect is significant in change of dielectric constant. - Abstract: The real dielectric constant ε' and complex dielectric constant ε'' of Cu 1-x Zn x Fe 2 O 4 have been measured at room temperature in the high frequency range 1 MHz to 1.8 GHz. At low frequencies the dielectric loss is found to be constant up to 1.4 GHz and there is a sudden rise at 1.5 GHz. A qualitative explanation is given for the composition, frequency dependence of the dielectric constant and dielectric loss of Cu 1-x Zn x Fe 2 O 4 . These are correlated with the W-H plot which gives the information about change in the average crystal size and strain of the samples. The micro-morphological features of the samples were obtained by Scanning Electron Microscopy (SEM). The micrograph shows that the increase of the Zn content in Cu ferrite increases the grain size.

  18. Plasma polymerized high energy density dielectric films for capacitors

    Science.gov (United States)

    Yamagishi, F. G.

    1983-01-01

    High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

  19. Multipactor susceptibility on a dielectric with two carrier frequencies

    Science.gov (United States)

    Iqbal, Asif; Verboncoeur, John; Zhang, Peng

    2018-04-01

    This work investigates multipactor discharge on a single dielectric surface with two carrier frequencies of an rf electric field. We use Monte Carlo simulations and analytical calculations to obtain susceptibility diagrams in terms of the rf electric field and normal electric field due to the residual charge on the dielectric. It is found that in contrast to the single frequency case, in general, the presence of a second carrier frequency of the rf electric field increases the threshold of the magnitude of the rf electric field to initiate multipactor. The effects of the relative strength and phase, and the frequency separation of the two carrier frequencies are examined. The conditions to minimize mulitpactor are derived.

  20. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2014-01-01

    Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric...

  1. Effect of paramagnetic manganese ions doping on frequency and high temperature dependence dielectric response of layered Na1.9Li0.1Ti3O7 ceramics

    International Nuclear Information System (INIS)

    Pal, Dharmendra; Pandey, J.L.

    2010-01-01

    The manganese doped layered ceramic samples (Na 1.9 Li 0.1 )Ti 3 O 7 : XMn (0.01 ≤ X ≤ 0.1) have been prepared using high temperature solid state reaction. The room temperature electron paramagnetic resonance (EPR) investigations exhibit that at lower percentage of doping the substitution of manganese ions occur as Mn 3+ at Ti 4+ sites, whereas for higher percentage of doping Mn 2+ ions occupy the two different interlayer sodium/lithium sites. In both cases, the charge compensation mechanism should operate to maintain the overall charge neutrality of the lattice. The manganese doped derivatives of layered Na 1.9 Li 0. 1Ti 3 O 7 (SLT) ceramics have been investigated through frequency dependence dielectric spectroscopy in this work. The results indicate that the dielectric losses in these ceramics are the collective contribution of electric conduction, dipole orientation and space charge polarization. Smeared peaks in temperature dependence of permittivity plots suggest diffuse nature of high temperature ferroelectric phase transition. The light manganese doping in SLT enhances the dielectric constant. However, manganese doping decreases dielectric loss due to inhibition of domain wall motion, enhances electron-hopping conduction, and impedes the interlayer ionic conduction as well. Manganese doping also gives rise to contraction of interlayer space. (author)

  2. Ultralow frequency bridge for dielectric measurements: applications to electrects

    International Nuclear Information System (INIS)

    Slaets, J.

    1976-01-01

    The problem of U.L.F. (Ultra Low Frequency) dielectric relaxation is investigated. An experimental model is proposed for a bridge covering the range of 10 -3 Hz-10Hz, pased on phase shift measurements originally proposed by Van Turhout and collaborators. The main experimental problems are also analyzed with such U.L.F. measurements and describe its construction and performance. The theoretical correlation between U.L.F. dielectric relaxation and electret thermal stimulated currents is also investigated. A correction for the integral expression given by Turnhout and collaborators, is calculated in particular that takes into account the value of the activation energy in the relation between the two techniques.The correction is important for values of the activation energy below 0,5eV, which occur frequently in dielectric relaxation processes. (Author) [pt

  3. All-dielectric band stop filter at terahertz frequencies

    Science.gov (United States)

    Yin, Shan; Chen, Lin

    2018-01-01

    We design all-dielectric band stop filters with silicon subwavelength rod and block arrays at terahertz frequencies. Supporting magnetic dipole resonances originated from the Mia resonance, the all-dielectric filters can modulate the working band by simply varying the structural geometry, while eliminating the ohmic loss induced by the traditional metallic metamaterials and uninvolved with the complicated mechanism. The nature of the resonance in the silicon arrays is clarified, which is attributed to the destructive interference between the directly transmitted waves and the waves emitted from the magnetic dipole resonances, and the resonance frequency is determined by the dielectric structure. By particularly designing the geometrical parameters, the profile of the transmission spectrum can be tailored, and the step-like band edge can be obtained. The all-dielectric filters can realize 93% modulation of the transmission within 0.04 THz, and maintain the bandwidth of 0.05 THz. This work provides a method to develop THz functional devices, such as filters, switches and sensors.

  4. High thermal conductivity lossy dielectric using a multi layer configuration

    Science.gov (United States)

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-01-01

    Systems and methods are described for loss dielectrics. A loss dielectric includes at least one high dielectric loss layer and at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. A method of manufacturing a loss dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. The systems and methods provide advantages because the loss dielectrics are less costly and more environmentally friendly than the available alternatives.

  5. Frequency, moisture content, and temperature dependent dielectric properties of potato starch related to drying with radio-frequency/microwave energy.

    Science.gov (United States)

    Zhu, Zhuozhuo; Guo, Wenchuan

    2017-08-24

    To develop advanced drying methods using radio-frequency (RF) or microwave (MW) energy, dielectric properties of potato starch were determined using an open-ended coaxial-line probe and network analyzer at frequencies between 20 and 4,500 MHz, moisture contents between 15.1% and 43.1% wet basis (w.b.), and temperatures between 25 and 75 °C. The results showed that both dielectric constant (ε') and loss factor (ε″) were dependent on frequency, moisture content, and temperature. ε' decreased with increasing frequency at a given moisture content or temperature. At low moisture contents (≤25.4% w.b.) or low temperatures (≤45 °C), ε″ increased with increasing frequency. However, ε″ changed from decrease to increase with increasing frequency at high moisture contents or temperatures. At low temperatures (25-35 °C), both ε' and ε″ increased with increasing moisture content. At low moisture contents (15.1-19.5% w.b.), they increased with increasing temperature. The change trends of ε' and ε″ were different and dependent on temperature and moisture content at their high levels. The penetration depth (d p ) decreased with increasing frequency. RF treatments may provide potential large-scale industrial drying application for potato starch. This research offers useful information on dielectric properties of potato starch related to drying with electromagnetic energy.

  6. Dielectric response of KCN crystals at ultra-low frequencies

    OpenAIRE

    Ziemath, Ervino C.; Aegerter, Michel A.; Slaets, J.

    1987-01-01

    We describe an ultra low frequency equipment employing programmable digital technique. The system is used to measure the dielectric parameters et, en and tg d or pure KCN crystals as a function of temperature in the frequency range 10-2 Hz to 40 Hz. The relaxation time of the Cn dipoles presents a classical temperature activated reorientation behaviour characterized by an Arrhenius law t=to exp (U/kT) with t0=7,26 x 10-15 s and U = 0,147 eV.

  7. Measuring changes of radio-frequency dielectric properties of chicken meat during storage

    Science.gov (United States)

    Changes in dielectric properties of stored chicken meat were tracked by using a radio-frequency dielectric spectroscopy method. For this purpose, the dielectric properties were measured with an open-ended coaxial-line probe and vector network analyzer over a broad frequency range from 200 MHz to 20...

  8. Peculiarities of low-frequency dielectric spectra and domain wall motion in gadolinium molybdate

    International Nuclear Information System (INIS)

    Galiyarova, N.M.; Gorin, S.V.; Dontsova, L.I.; Shil'nikov, A.V.; Shuvalov, L.A.

    1994-01-01

    Low-frequency Debye dispersion of dielectric permeability in GMO with the low values of high-frequency limit ε ∞ was investigated in a wide temperature range as well as in fields of variable amplitude. The features of domain boundaries motion were studied at the partial repolarization in monopolar P-pulsed fields. The model of cooperationrelaxation motion brifing in parallel with positive to negative contribution to polarization that explained the low values of ε ∞ was suggested

  9. Evaluation of high temperature capacitor dielectrics

    Science.gov (United States)

    Hammoud, Ahmad N.; Myers, Ira T.

    1992-01-01

    Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

  10. Equivalent circuit modeling of the dielectric properties of rubber wood at low frequency

    Science.gov (United States)

    Wan M. Daud; Kaida B. Khalid; Aziz H.A. Sidek

    2000-01-01

    Dielectric properties of rubber wood were studied at various moisture contents and grain directions at low frequencies from 10-2 to 105 Hz. Results showed that the moisture content of wood affected the dielectric properties considerably. Dielectric data at different anisotropic directions, i.e., longitudinal, radial, and...

  11. Electrode/Dielectric Strip For High-Energy-Density Capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S.

    1994-01-01

    Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

  12. High Dielectric Low Loss Transparent Glass Material Based Dielectric Resonator Antenna with Wide Bandwidth Operation

    Science.gov (United States)

    Mehmood, Arshad; Zheng, Yuliang; Braun, Hubertus; Hovhannisyan, Martun; Letz, Martin; Jakoby, Rolf

    2015-01-01

    This paper presents the application of new high permittivity and low loss glass material for antennas. This glass material is transparent. A very simple rectangular dielectric resonator antenna is designed first with a simple microstrip feeding line. In order to widen the bandwidth, the feed of the design is modified by forming a T-shaped feeding. This new design enhanced the bandwidth range to cover the WLAN 5 GHz band completely. The dielectric resonator antenna cut into precise dimensions is placed on the modified microstrip feed line. The design is simple and easy to manufacture and also very compact in size of only 36 × 28 mm. A -10 dB impedance bandwidth of 18% has been achieved, which covers the frequency range from 5.15 GHz to 5.95 GHz. Simulations of the measured return loss and radiation patterns are presented and discussed.

  13. High temperature polymer film dielectrics for aerospace power conditioning capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Venkat, Narayanan, E-mail: venkats3@gmail.co [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Dang, Thuy D. [Air Force Research Laboratory-Nanostructured and Biological Materials Branch (AFRL/RXBN) (United States); Bai Zongwu; McNier, Victor K. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); DeCerbo, Jennifer N. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States); Tsao, B.-H. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Stricker, Jeffery T. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States)

    2010-04-15

    Polymer dielectrics are the preferred materials of choice for capacitive energy-storage applications because of their potential for high dielectric breakdown strengths, low dissipation factors and good dielectric stability over a wide range of frequencies and temperatures, despite having inherently lower dielectric constants relative to ceramic dielectrics. They are also amenable to large area processing into films at a relatively lower cost. Air Force currently has a strong need for the development of compact capacitors which are thermally robust for operation in a variety of aerospace power conditioning applications. While such applications typically use polycarbonate (PC) dielectric films in wound capacitors for operation from -55 deg. C to 125 deg. C, future power electronic systems would require the use of polymer dielectrics that can reliably operate up to elevated temperatures in the range of 250-350 deg. C. The focus of this research is the generation and dielectric evaluation of metallized, thin free-standing films derived from high temperature polymer structures such as fluorinated polybenzoxazoles, post-functionalized fluorinated polyimides and fluorenyl polyesters incorporating diamond-like hydrocarbon units. The discussion is centered mainly on variable temperature dielectric measurements of film capacitance and dissipation factor and the effects of thermal cycling, up to a maximum temperature of 350 deg. C, on film dielectric performance. Initial studies clearly point to the dielectric stability of these films for high temperature power conditioning applications, as indicated by their relatively low temperature coefficient of capacitance (TCC) (approx2%) over the entire range of temperatures. Some of the films were also found to exhibit good dielectric breakdown strengths (up to 470 V/mum) and a film dissipation factor of the order of <0.003 (0.3%) at the frequency of interest (10 kHz) for the intended applications. The measured relative dielectric

  14. Structure and dielectric properties in the radio frequency range of polymer composites based on vanadium dioxide

    Directory of Open Access Journals (Sweden)

    Kolbunov V.R.

    2015-06-01

    Full Text Available Polymer composites with active fillers are recently considered to be promising materials for the design of new functional devices with controllable properties and are intensively investigated. Dielectric studies are one of the most effective methods for studying structural features and mechanisms of conductivity formation for this type of two-component systems. The paper presents research results of the dielectric characteristics in the range of radio frequency of 50 kHz — 10 MHz and temperature range of 30—60°C of polyethylene composites of vanadium dioxide with different volume fractions of filler. Two dispersion areas were found: a high-frequency area caused by the Maxwell charge separation on the boundaries of the polyethylene matrix — conductive filler of VI2 crystallites, and a low frequency area associated with the presence of the transition layer at this boundary. The relative permittivity of the composite has a tendency to a decrease in absolute value with increasing temperature. The analysis of the low-frequency dependence of the dielectric constant of the value of the filler’s volume fraction revealed that the investigated composite belongs to two-component statistical mixtures with a transition layer between the components.

  15. Complex dielectric modulus and relaxation response at low microwave frequency region of dielectric ceramic Ba6-3xNd8+2xTi18O54

    Directory of Open Access Journals (Sweden)

    Chian Heng Lee

    2014-10-01

    Full Text Available The desirable characteristics of Ba6-3xNd8+2xTi18O54 include high dielectric constant, low loss tangent, and high quality factor developed a new field for electronic applications. The microwave dielectric properties of Ba6-3xNd8+2xTi18O54, with x = 0.15 ceramics at different sintering temperatures (600–1300°C were investigated. The phenomenon of polarization produced by the applied electric field was studied. The dielectric properties with respect to frequency from 1 MHz to 1.5 GHz were measured using Impedance Analyzer, and the results were compared and analyzed. The highest dielectric permittivity and lowest loss factor were defined among the samples. The complex dielectric modulus was evaluated from the measured parameters of dielectric measurement in the same frequency range, and used to differentiate the contribution of grain and grain boundary.

  16. Dielectric properties of almond shells in the development of radio frequency and microwave pasteurization

    Science.gov (United States)

    To develop pasteurization treatments based on radio frequency (RF) or microwave energy, dielectric properties of almond shells were determined using an open-ended coaxial-probe with an impedance analyzer over a frequency range of 10 to 1800 MHz. Both the dielectric constant and loss factor of almond...

  17. Thermal Experimental Analysis for Dielectric Characterization of High Density Polyethylene Nanocomposites

    Directory of Open Access Journals (Sweden)

    Ahmed Thabet Mohamed

    2016-01-01

    Full Text Available The importance of nanoparticles in controlling physical properties of polymeric nanocomposite materials leads us to study effects of these nanoparticles on electric and dielectric properties of polymers in industry In this research, the dielectric behaviour of High-Density Polyethylene (HDPE nanocomposites materials that filled with nanoparticles of clay or fumed silica has been investigated at various frequencies (10 Hz-1 kHz and temperatures (20-60°C. Dielectric spectroscopy has been used to characterize ionic conduction, then, the effects of nanoparticles concentration on the dielectric losses and capacitive charge of the new nanocomposites can be stated. Capacitive charge and loss tangent in high density polyethylene nanocomposites are measured by dielectric spectroscopy. Different dielectric behaviour has been observed depending on type and concentration of nanoparticles under variant thermal conditions.

  18. Dielectric behavior of CaCu3Ti4O12: Poly Vinyl Chloride ceramic polymer composites at different temperature and frequencies

    Directory of Open Access Journals (Sweden)

    Ajay Pratap Singh

    2016-12-01

    Full Text Available In this study, the efforts have been made to obtain relatively high dielectric constant polymer-ceramic composite by incorporating the giant dielectric constant material, calcium copper titanate (CCTO in a PVC polymer matrix. We have prepared composites of CaCu3Ti4O12 (CCTO ceramic and Poly Vinyl Chloride (PVC polymer in various ratios (by volume in addition to pure CCTO. For this, CCTO was prepared by the conventional oxide route (solid-state reaction method. The structural, the microstructural and the dielectric properties of the composites were studied using X-ray diffraction, Scanning Electron Microscope, and impedance analyzer respectively. The study of dielectric constant and dielectric loss of the pure CCTO and the composites reveal that there is good range of dielectric constants and dielectric losses for the studied composites. The pure sample of CCTO exhibits giant dielectric constant at low frequency within the studied temperature range. As frequency increases, dielectric constant drastically decreases and approaching a constant value at 1 MHz. Above the intermediate temperature, the dielectric constant and dielectric loss for pure CCTO is more frequency dependent than its composites.

  19. Characterization of surface dielectric barrier discharge influenced by intermediate frequency for ozone production

    Science.gov (United States)

    Abdelaziz, Ayman A.; Ishijima, Tatsuo; Seto, Takafumi; Osawa, Naoki; Wedaa, Hassan; Otani, Yoshio

    2016-06-01

    The aim of this study is to investigate the effect of the intermediate frequency (1-10 kHz) of the sinusoidal driving voltage on the characteristics of a developed surface dielectric barrier discharge (SDBD)-based reactor having spikes on its discharge electrode. Moreover, its influence on the production of ozone and nitrogen oxide byproducts is evaluated. The results show that SDBD is operated in the filamentary mode at all the frequencies. Nevertheless, the pulses of the discharge current at high frequencies are much denser and have higher amplitudes than those at low frequencies. The analysis of the power consumed in the reactor shows that a small portion of the input power is dissipated in the dielectric material of SDBD source, whereas the major part of the power is consumed in the plasma discharge. The results of the ozone production show that higher frequencies have a slightly adverse effect on the ozone production at relatively high energy density values, where the ozone concentration is slightly decreased when the frequency is increased at the same energy density. The temperature of the discharge channels and gas is not a crucial factor for the decomposition of ozone in this reactor, while the results of the measurements of nitrogen oxides characteristics indicate that the formation of NO and NO2 has a significant adverse effect on the production efficiency of ozone due to their oxidation to another nitrogen oxides and their catalytic effect.

  20. Characterization of surface dielectric barrier discharge influenced by intermediate frequency for ozone production

    International Nuclear Information System (INIS)

    Abdelaziz, Ayman A; Ishijima, Tatsuo; Seto, Takafumi; Otani, Yoshio; Osawa, Naoki; Wedaa, Hassan

    2016-01-01

    The aim of this study is to investigate the effect of the intermediate frequency (1–10 kHz) of the sinusoidal driving voltage on the characteristics of a developed surface dielectric barrier discharge (SDBD)-based reactor having spikes on its discharge electrode. Moreover, its influence on the production of ozone and nitrogen oxide byproducts is evaluated. The results show that SDBD is operated in the filamentary mode at all the frequencies. Nevertheless, the pulses of the discharge current at high frequencies are much denser and have higher amplitudes than those at low frequencies. The analysis of the power consumed in the reactor shows that a small portion of the input power is dissipated in the dielectric material of SDBD source, whereas the major part of the power is consumed in the plasma discharge. The results of the ozone production show that higher frequencies have a slightly adverse effect on the ozone production at relatively high energy density values, where the ozone concentration is slightly decreased when the frequency is increased at the same energy density. The temperature of the discharge channels and gas is not a crucial factor for the decomposition of ozone in this reactor, while the results of the measurements of nitrogen oxides characteristics indicate that the formation of NO and NO 2 has a significant adverse effect on the production efficiency of ozone due to their oxidation to another nitrogen oxides and their catalytic effect. (paper)

  1. Silver Nanowire/MnO2 Nanowire Hybrid Polymer Nanocomposites: Materials with High Dielectric Permittivity and Low Dielectric Loss.

    Science.gov (United States)

    Zeraati, Ali Shayesteh; Arjmand, Mohammad; Sundararaj, Uttandaraman

    2017-04-26

    This study reports the fabrication of hybrid nanocomposites based on silver nanowire/manganese dioxide nanowire/poly(methyl methacrylate) (AgNW/MnO 2 NW/PMMA), using a solution casting technique, with outstanding dielectric permittivity and low dielectric loss. AgNW was synthesized using the hard-template technique, and MnO 2 NW was synthesized employing a hydrothermal method. The prepared AgNW:MnO 2 NW (2.0:1.0 vol %) hybrid nanocomposite showed a high dielectric permittivity (64 at 8.2 GHz) and low dielectric loss (0.31 at 8.2 GHz), which are among the best reported values in the literature in the X-band frequency range (8.2-12.4 GHz). The superior dielectric properties of the hybrid nanocomposites were attributed to (i) dimensionality match between the nanofillers, which increased their synergy, (ii) better dispersion state of AgNW in the presence of MnO 2 NW, (iii) positioning of ferroelectric MnO 2 NW in between AgNWs, which increased the dielectric permittivity of nanodielectrics, thereby increasing dielectric permittivity of the hybrid nanocomposites, (iv) barrier role of MnO 2 NW, i.e., cutting off the contact spots of AgNWs and leading to lower dielectric loss, and (v) AgNW aligned structure, which increased the effective surface area of AgNWs, as nanoelectrodes. Comparison of the dielectric properties of the developed hybrid nanocomposites with the literature highlights their great potential for flexible capacitors.

  2. INVESTIGATION OF THE FREQUENCY-TEMPERATURE RELATIONSHIP OF THE DIELECTRIC PERMITTIVITY OF THE PZT PIEZOCERAMICS IN THE LOW FREQUENCY RANGE

    Directory of Open Access Journals (Sweden)

    A. I. ZOLOTAREVSKIY

    2018-05-01

    Full Text Available Purpose. To investigate the frequency-temperature relationship of the dielectric permittivity of PZT piezoceramics in the low frequency range. Methodology. To obtain the frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics, a technique was used to determine the capacitance of the capacitor, between which plates the sample was placed. The value of the dielectric permittivity of the sample was calculated from the capacitor capacitance obtained. Findings. The frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics in the low frequency range has been obtained by the authors. The dielectric permittivity is not practically related to the frequency of the alternating voltage at a low temperature, with increasing in temperature its value increases and frequency relationship is observed. The temperature relationship of the dielectric permittivity of the PZT piezoceramics is satisfactorily described by the exponential functional dependence in the low-temperature range. The activation energy of the PZT piezoceramics polarization is determined from the graph of the dependence of the logarithm of the dielectric permittivity upon the inverse temperature. Different values of the activation energy for the two temperature regions prove on the existence of different mechanisms of the PZT piezoceramics polarization in the temperature range being investigated. Originality. The authors investigated the frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics in the low-frequency range. It is established that the temperature relationship of the dielectric permittivity of the PZT piezoceramics is satisfactorily described by an exponential functional relationship in the lowtemperature range. The activation energy of polarization is determined for two temperature sections. Practical value. The research results can be used to study the mechanism of polarization of

  3. Synthesis and Characterization of High-Dielectric-Constant Nanographite-Polyurethane Composite

    Science.gov (United States)

    Mishra, Praveen; Bhat, Badekai Ramachandra; Bhattacharya, B.; Mehra, R. M.

    2018-05-01

    In the face of ever-growing demand for capacitors and energy storage devices, development of high-dielectric-constant materials is of paramount importance. Among various dielectric materials available, polymer dielectrics are preferred for their good processability. We report herein synthesis and characterization of nanographite-polyurethane composite with high dielectric constant. Nanographite showed good dispersibility in the polyurethane matrix. The thermosetting nature of polyurethane gives the composite the ability to withstand higher temperature without melting. The resultant composite was studied for its dielectric constant (ɛ) as a function of frequency. The composite exhibited logarithmic variation of ɛ from 3000 at 100 Hz to 225 at 60 kHz. The material also exhibited stable dissipation factor (tan δ) across the applied frequencies, suggesting its ability to resist current leakage.

  4. Coupled modes, frequencies and fields of a dielectric resonator and a cavity using coupled mode theory

    Science.gov (United States)

    Elnaggar, Sameh Y.; Tervo, Richard; Mattar, Saba M.

    2014-01-01

    Probes consisting of a dielectric resonator (DR) inserted in a cavity are important integral components of electron paramagnetic resonance (EPR) spectrometers because of their high signal-to-noise ratio. This article studies the behavior of this system, based on the coupling between its dielectric and cavity modes. Coupled-mode theory (CMT) is used to determine the frequencies and electromagnetic fields of this coupled system. General expressions for the frequencies and field distributions are derived for both the resulting symmetric and anti-symmetric modes. These expressions are applicable to a wide range of frequencies (from MHz to THz). The coupling of cavities and DRs of various sizes and their resonant frequencies are studied in detail. Since the DR is situated within the cavity then the coupling between them is strong. In some cases the coupling coefficient, κ, is found to be as high as 0.4 even though the frequency difference between the uncoupled modes is large. This is directly attributed to the strong overlap between the fields of the uncoupled DR and cavity modes. In most cases, this improves the signal to noise ratio of the spectrometer. When the DR and the cavity have the same frequency, the coupled electromagnetic fields are found to contain equal contributions from the fields of the two uncoupled modes. This situation is ideal for the excitation of the probe through an iris on the cavity wall. To verify and validate the results, finite element simulations are carried out. This is achieved by simulating the coupling between a cylindrical cavity's TE011 and the dielectric insert's TE01δ modes. Coupling between the modes of higher order is also investigated and discussed. Based on CMT, closed form expressions for the fields of the coupled system are proposed. These expressions are crucial in the analysis of the probe's performance.

  5. Dielectric characterization of high-performance spaceflight materials

    Science.gov (United States)

    Kleppe, Nathan; Nurge, Mark A.; Bowler, Nicola

    2015-03-01

    As commercial space travel increases, the need for reliable structural health monitoring to predict possible weaknesses or failures of structural materials also increases. Monitoring of these materials can be done through the use of dielectric spectroscopy by comparing permittivity or conductivity measurements performed on a sample in use to that of a pristine sample from 100 μHz to 3 GHz. Fluctuations in these measured values or of the relaxation frequencies, if present, can indicate chemical or physical changes occurring within the material and the possible need for maintenance/replacement. In this work, we establish indicative trends that occur due to changes in dielectric spectra during accelerated aging of various high-performance polymeric materials: ethylene vinyl alcohol (EVOH), Poly (ether ether ketone) (PEEK), polyphenylene sulfide (PPS), and ultra-high molecular weight polyethylene (UHMWPE). Uses for these materials range from electrical insulation and protective coatings to windows and air- or space-craft parts that may be subject to environmental damage over long-term operation. Samples were prepared by thermal exposure and, separately, by ultraviolet/water-spray cyclic aging. The aged samples showed statistically-significant trends of either increasing or decreasing real or imaginary permittivity values, relaxation frequencies, conduction or the appearance of new relaxation modes. These results suggest that dielectric testing offers the possibility of nondestructive evaluation of the extent of age-related degradation in these materials.

  6. A simple method for reducing inevitable dielectric loss in high-permittivity dielectric elastomers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Mazurek, Piotr Stanislaw

    2016-01-01

    elastomer matrix, with high dielectric permittivity and a low Young's modulus, aligned with no loss of mechanical stability, was prepared through the use of commercially available chloropropyl-functional silicone oil mixed into a tough commercial liquid silicone rubber silicone elastomer. The addition...... also decreased the dielectric losses of an elastomer containing dielectric permittivity-enhancing TiO2 fillers. Commercially available chloropropyl-functional silicone oil thus constitutes a facile method for improved silicone DEs, with very low dielectric losses.......Commercial viability of dielectric elastomers (DEs) is currently limited by a few obstacles, including high driving voltages (in the kV range). Driving voltage can be lowered by either decreasing the Young's modulus or increasing the dielectric permittivity of silicone elastomers, or a combination...

  7. High temperature measurements of the microwave dielectric properties of ceramics

    International Nuclear Information System (INIS)

    Baeraky, T.A.

    1999-06-01

    Equipment has been developed for the measurement of dielectric properties at high temperature from 25 to 1700 deg. C in the microwave frequency range 614.97 to 3620.66 MHz using the cavity perturbation technique, to measure the permittivity of a range of ceramic materials. The complex permittivities of the standard materials, water and methanol, were measured at low temperature and compared with the other published data. A statistical analysis was made for the permittivity measurements of water and methanol using sample holders of different diameter. Also the measurements of these materials were used to compare the simple perturbation equation with its modifications and alternation correction methods for sample shape and the holes at the two endplates of the cavity. The dielectric properties of solid materials were investigated from the permittivity measurements on powder materials, shown in table 4.7, using the dielectric mixture equations. Two kinds of ceramics, oxide and nitrides, were selected for the high temperature dielectric measurements in microwave frequency ranges. Pure zirconia, yttria-stabilised zirconia, and Magnesia-stabilised zirconia are the oxide ceramics while aluminium nitride and silicon nitride are the nitride ceramics. A phase transformation from monoclinic to tetragonal was observed in pure zirconia in terms of the complex permittivity measurements, and the conduction mechanism in three regions of temperature was suggested to be ionic in the first region and a mixture of ionic and electronic in the second. The phase transition disappeared with yttria-stabilised zirconia but it was observed with magnesia-stabilised zirconia. Yttria doped zirconia was fully stabilised while magnesia stabilised was partially stabilised zirconia. The dielectric property measurements of aluminium nitride indicated that there is a transition from AIN to AlON, which suggested that the external layer of the AIN which was exposed to the air, contains alumina. It was

  8. Dielectric and Radiative Properties of Sea Foam at Microwave Frequencies: Conceptual Understanding of Foam Emissivity

    OpenAIRE

    Peter W. Gaiser; Magdalena D. Anguelova

    2012-01-01

    Foam fraction can be retrieved from space-based microwave radiometric data at frequencies from 1 to 37 GHz. The retrievals require modeling of ocean surface emissivity fully covered with sea foam. To model foam emissivity well, knowledge of foam properties, both mechanical and dielectric, is necessary because these control the radiative processes in foam. We present a physical description of foam dielectric properties obtained from the foam dielectric constant including foam skin depth; foam ...

  9. Structural and frequency dependencies of a.c. and dielectric ...

    Indian Academy of Sciences (India)

    6Thin Film Laboratory, Department of Physics, Faculty of Education, Ain Shams ... conductivity and its frequency exponents were interpreted in terms of correlated barrier hopping ... cations in high-electron-mobility and heterostructure bipolar.

  10. Dielectric properties of dried vegetable powders and their temperature profile during radio frequency heating

    Science.gov (United States)

    Recently, Salmonella contamination was identified in low-moisture foods including dried vegetable powder. Radio Frequency (RF) dielectric heating is a potential alternative pasteurization method with short heating time. Dielectric properties of broccoli powder with 6.9, 9.1, 12.2, and 14.9%, w. b....

  11. Polaron-electron assisted giant dielectric dispersion in SrZrO{sub 3} high-k dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Borkar, Hitesh; Barvat, Arun; Pal, Prabir; Kumar, Ashok, E-mail: ashok553@nplindia.org [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Shukla, A. K. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Pulikkotil, J. J. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Computation and Networking Facility, CSIR-National Physical Laboratory, New Delhi 110012 (India)

    2016-06-07

    The SrZrO{sub 3} is a well known high-k dielectric constant (∼22) and high optical bandgap (∼5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (T{sub e}) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction. X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O{sup 2−} anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO{sub 6} octahedral angle in the temperature range of 650–750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.

  12. Resonant frequencies and Q factors of dielectric parallelepipeds by measurement and by FDTD

    Energy Technology Data Exchange (ETDEWEB)

    Trueman, C.W. [Concordia Univ., Montreal, Quebec (Canada); Mishra, S.R.; Larose, C.L. [David Florida Lab., Ottawa (Canada)] [and others

    1994-12-31

    This paper describes the measurement and computation of the resonant frequencies and the associated Q factors of dielectric parallelepipeds made of high-permittivity, low-loss ceramic materials. Each resonance peak is measured separately with a fine frequency step. A curve-fitting method is used to accurately estimate the resonant frequency and 3 dB bandwidth from the somewhat noisy measured data. The finite-difference time-domain method is used to compute the initial portion of the backscattered field due to a Gaussian pulse plane wave. The time response is then extended to zero value by Prony`s method. The measured and computed data is compared for a parallelepiped resonator of permittivity 37.84.

  13. Dielectric properties of gadolinium molybdate in low- and infralow frequency electric fields

    International Nuclear Information System (INIS)

    Galiyarova, N.M.; Gorin, S.V.; Dontsova, L.I.; Shil'nikov, A.V.; Shuvalov, L.A.; AN SSSR, Moscow

    1992-01-01

    Temperature dependences of complex dielectric permittivity of gadolinium molybdate (GMO) in low- (LF) and infralow-frequency (ILF) electric fields with 0.1 V·cm -1 amplitude within 0.25-10 4 Hz frequency range are studied. Substantial effect of the crystal prehistory on LF and ILF dielectric properties and domain structure state is revealed. An anomalous reduction of complex dielectric permittivity accompanied by the occurrence of the Debye LF-dispersion of permittivity is detected under the sample cooling from a nonpolar phase

  14. Dielectric Properties and Oxidation Roasting of Molybdenite Concentrate by Using Microwave Energy at 2.45 GHz Frequency

    Science.gov (United States)

    Yonglin, Jiang; Bingguo, Liu; Peng, Liu; Jinhui, Peng; Libo, Zhang

    2017-12-01

    Conversion of electromagnetic energy into heat depends largely on the dielectric properties of the material being treated. Therefore, determining the dielectric properties of molybdenite concentrate and its microwave power penetration depth in relation to a temperature increment at the commercial frequency of 2.45 GHz is necessary to design industrial microwave processing units. In this study, the dielectric constants increased as the temperature increased in the entire experimental range. The loss factor presented an opposite trend, except for 298 K to 373 K (25 °C to 100 °C) in which a cavity perturbation resonator was used. The plots of nonlinear surface fitting indicate that the increase in dielectric loss causes a considerable decrease in penetration depth, but the dielectric constants exert a small positive effect. The thermogravimetric analysis (TGA-DSC) of the molybdenite concentrate was carried out to track its thermal decomposition process, aim to a dielectric analysis during the microwave heating. MoO3 was prepared from molybdenite concentrate through oxidation roasting in a microwave heating system and a resistance furnace, respectively. The phase transitions and morphology evolutions during oxidation roasting were characterized through X-ray diffraction and scanning electron microscopy. Results show that microwave thermal technique can produce high-purity molybdenum trioxide.

  15. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    system, with respect to functionalization, is achieved. It is investigated how the different functionalization variables affect essential DE properties, including dielectric permittivity, dielectric loss, elastic modulus and dielectric breakdown strength, and the optimal degree of chemical......%) was obtained without compromising other vital DE properties such as elastic modulus, gel fraction, dielectric and viscous loss and electrical breakdown strength....

  16. High temperature dielectric studies of indium-substituted NiCuZn nanoferrites

    Science.gov (United States)

    Hashim, Mohd.; Raghasudha, M.; Shah, Jyoti; Shirsath, Sagar E.; Ravinder, D.; Kumar, Shalendra; Meena, Sher Singh; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

    2018-01-01

    In this study, indium (In3+)-substituted NiCuZn nanostructured ceramic ferrites with a chemical composition of Ni0.5Cu0.25Zn0.25Fe2-xInxO4 (0.0 ≤ x ≤ 0.5) were prepared by chemical synthesis involving sol-gel chemistry. Single phased cubic spinel structure materials were prepared successfully according to X-ray diffraction and transmission electron microscopy analyses. The dielectric properties of the prepared ferrites were measured using an LCR HiTester at temperatures ranging from room temperature to 300 °C at different frequencies from 102 Hz to 5 × 106 Hz. The variations in the dielectric parameters ε‧ and (tanδ) with temperature demonstrated the frequency- and temperature-dependent characteristics due to electron hopping between the ions. The materials had low dielectric loss values in the high frequency range at all temperatures, which makes them suitable for high frequency microwave applications. A qualitative explanation is provided for the dependences of the dielectric constant and dielectric loss tangent on the frequency, temperature, and composition. Mӧssbauer spectroscopy was employed at room temperature to characterize the magnetic behavior.

  17. High Temperature Radio Frequency Loads

    CERN Document Server

    Federmann, S; Grudiev, A; Montesinos, E; Syratchev, I

    2011-01-01

    In the context of energy saving and recovery requirements the design of reliable and robust RF power loads which permit a high outlet temperature and high pressure of the cooling water is desirable. Cooling water arriving at the outlet withmore than 150 ◦C and high pressure has a higher value than water with 50 ◦C under low pressure. Conventional RF power loads containing dielectric and magnetic materials as well as sensitive ceramic windows usually do not permit going much higher than 90 ◦C. Here we present and discuss several design concepts for "metal only" RF high power loads. One concept is the application of magnetic steel corrugated waveguides near cutoff – this concept could find practical use above several GHz. Another solution are resonant structures made of steel to be installed in large waveguides for frequencies of 500 MHz or lower. Similar resonant structures above 100 MHz taking advantage of the rather high losses of normal steel may also be used in coaxial line geometries with large di...

  18. A dielectric approach to high temperature superconductivity

    International Nuclear Information System (INIS)

    Mahanty, J.; Das, M.P.

    1989-01-01

    The dielectric response of an electron-ion system to the presence of a pair of charges is investigated. From the nature of the dielectric function, it is shown that a strong attractive pair formation is possible depending on the dispersion of the ion branches. The latter brings a reduction to the sound velocity which is used as a criterion for the superconductivity. By solving the BCS equation with the above dielectric function, we obtain a reasonable value of T/sub c/. 17 refs., 1 fig

  19. ALMA High Frequency Techniques

    Science.gov (United States)

    Meyer, J. D.; Mason, B.; Impellizzeri, V.; Kameno, S.; Fomalont, E.; Chibueze, J.; Takahashi, S.; Remijan, A.; Wilson, C.; ALMA Science Team

    2015-12-01

    The purpose of the ALMA High Frequency Campaign is to improve the quality and efficiency of science observing in Bands 8, 9, and 10 (385-950 GHz), the highest frequencies available to the ALMA project. To this end, we outline observing modes which we have demonstrated to improve high frequency calibration for the 12m array and the ACA, and we present the calibration of the total power antennas at these frequencies. Band-to-band (B2B) transfer and bandwidth switching (BWSW), techniques which improve the speed and accuracy of calibration at the highest frequencies, are most necessary in Bands 8, 9, and 10 due to the rarity of strong calibrators. These techniques successfully enable increased signal-to-noise on the calibrator sources (and better calibration solutions) by measuring the calibrators at lower frequencies (B2B) or in wider bandwidths (BWSW) compared to the science target. We have also demonstrated the stability of the bandpass shape to better than 2.4% for 1 hour, hidden behind random noise, in Band 9. Finally, total power observing using the dual sideband receivers in Bands 9 and 10 requires the separation of the two sidebands; this procedure has been demonstrated in Band 9 and is undergoing further testing in Band 10.

  20. High frequency energy measurements

    International Nuclear Information System (INIS)

    Stotlar, S.C.

    1981-01-01

    High-frequency (> 100 MHz) energy measurements present special problems to the experimenter. Environment or available electronics often limit the applicability of a given detector type. The physical properties of many detectors are frequency dependent and in some cases, the physical effect employed can be frequency dependent. State-of-the-art measurements generally involve a detection scheme in association with high-speed electronics and a method of data recording. Events can be single or repetitive shot requiring real time, sampling, or digitizing data recording. Potential modification of the pulse by the detector and the associated electronics should not be overlooked. This presentation will review typical applications, methods of choosing a detector, and high-speed detectors. Special considerations and limitations of some applications and devices will be described

  1. Transmission Characteristics of a Generalized Parallel Plate Dielectric Waveguide at THz Frequencies

    International Nuclear Information System (INIS)

    Ye Long-Fang; Xu Rui-Min; Zhang Yong; Lin Wei-Gan

    2011-01-01

    A generalized parallel-plate dielectric waveguide (G-PPDW) is proposed as a new guiding medium for terahertz wave. A theoretical analysis of the transmission characteristics for the TE modes of this generalized structure is performed. Equations are presented for the field components, dispersion, power ratio, transmission loss and characteristic impedance as functions of the operating frequencies, dimensions and material constants. In the case of the lowest-order mode TE 10 , design curves covering frequencies and dimensions for the given material constants in the THz region are presented. The theoretical results of transmission characteristics obtained from these equations are verified by the finite-element method with a good agreement. The investigation results show that by selecting proper dimensions and dielectric materials, G-PPDW can be used to guide THz waves efficiently with high power confinement and low attenuation. These outstanding properties may open up a way to many important applications for THz integrated circuits and systems. (fundamental areas of phenomenology(including applications))

  2. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    International Nuclear Information System (INIS)

    Dakhel, A.A.; Jasim, Khalil E.; Cassidy, S.; Henari, F.Z.

    2013-01-01

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε ′ ∞ ≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z * (ω) and modulus M * (ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices

  3. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

    2013-09-20

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

  4. Organic dielectrics in high voltage cables

    Energy Technology Data Exchange (ETDEWEB)

    Vermeer, J

    1962-03-01

    It appears that the limit has been reached in the applicability of oil-impregnated paper as the dielectric for ehv cables, as with rising voltages the prevention of conductor losses becomes increasingly difficult, while the dielectric losses of the insulation, increasing as the square of the voltage, contribute to a greater extent to the temperature rise of the conductor. The power transmitting capacity of ehv cables reaches a maximum at 500 to 600 kV for these reasons. Apart from artificial cooling, a substantial improvement can be obtained only with the use of insulating materials with much lower dielectric losses; these can moreover be applied with a smaller wall thickness, but this means higher field strengths. Synthetic polymer materials meet these requirements but can be used successfully only in the form of lapped film tapes impregnated with suitable liquids. The electrical properties of these heterogeneous dielectrics, in particular, their impulse breakdown strengths are studied in detail.

  5. Conductivity, dielectric behavior and FTIR studies of high molecular weight poly(vinylchloride)-lithium triflate polymer electrolytes

    International Nuclear Information System (INIS)

    Ramesh, S.; Chai, M.F.

    2007-01-01

    Thin films of high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF 3 SO 3 ) salt were prepared by solution casting method. The ionic conductivity and dielectric measurements were carried out on these films over a wide frequency regime at various temperatures. The conductivity-temperature plots were found to obey classical Arrhenius relationship. The dielectric behavior was analysed using dielectric permittivity and dielectric modulus of the samples. FTIR studies show some simple overlapping and shift in peaks between high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF 3 SO 3 ) salt in the polymer electrolyte complexes

  6. Conductivity, dielectric behavior and FTIR studies of high molecular weight poly(vinylchloride)-lithium triflate polymer electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Ramesh, S. [Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Setapak, 53300 Kuala Lumpur (Malaysia)]. E-mail: ramesh@mail.utar.edu.my; Chai, M.F. [Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Setapak, 53300 Kuala Lumpur (Malaysia)

    2007-05-15

    Thin films of high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF{sub 3}SO{sub 3}) salt were prepared by solution casting method. The ionic conductivity and dielectric measurements were carried out on these films over a wide frequency regime at various temperatures. The conductivity-temperature plots were found to obey classical Arrhenius relationship. The dielectric behavior was analysed using dielectric permittivity and dielectric modulus of the samples. FTIR studies show some simple overlapping and shift in peaks between high molecular weight polyvinyl chloride (PVC) with lithium triflate (LiCF{sub 3}SO{sub 3}) salt in the polymer electrolyte complexes.

  7. Frequency and temperature dependent dielectric properties of TiO2-V2O5 nanocomposites

    Science.gov (United States)

    Ray, Apurba; Roy, Atanu; De, Sayan; Chatterjee, Souvik; Das, Sachindranath

    2018-03-01

    In this manuscript, we have reported the crystal structure, dielectric response, and transport phenomenon of TiO2-V2O5 nanocomposites. The nanocomposites were synthesized using a sol-gel technique having different molar ratios of Ti:V (10:10, 10:15, and 10:20). The phase composition and the morphology have been studied using X-ray diffraction and field emission scanning electron microscope, respectively. The impedance spectroscopy studies of the three samples over a wide range of temperature (50 K-300 K) have been extensively described using the internal barrier layer capacitor model. It is based on the contribution of domain and domain boundary, relaxations of the materials, which are the main crucial factors for the enhancement of the dielectric response. The frequency dependent ac conductivity of the ceramics strongly obeys the well-known Jonscher's power law, and it has been clearly explained using the theory of jump relaxation model. The temperature dependent bulk conductivity is fairly recognized to the variable-range hopping of localized polarons. The co-existence of mixed valence state of Ti ions (Ti3+ and Ti4+) in the sample significantly contributes to the change of dielectric property. The overall study of dielectric response explains that the dielectric constant and the dielectric loss are strongly dependent on temperature and frequency and decrease with an increase of frequency as well as temperature.

  8. High frequency electromagnetic dosimetry

    CERN Document Server

    Sánchez-Hernández, David A

    2009-01-01

    Along with the growth of RF and microwave technology applications, there is a mounting concern about the possible adverse effects over human health from electromagnetic radiation. Addressing this issue and putting it into perspective, this groundbreaking resource provides critical details on the latest advances in high frequency electromagnetic dosimetry.

  9. Terahertz polarization converter based on all-dielectric high birefringence metamaterial with elliptical air holes

    KAUST Repository

    Zi, Jianchen

    2018-02-15

    Metamaterials have been widely applied in the polarization conversion of terahertz (THz) waves. However, common plasmonic metamaterials usually work as reflective devices and have low transmissions. All-dielectric metamaterials can overcome these shortcomings. An all-dielectric metamaterial based on silicon with elliptical air holes is reported to achieve high artificial birefringence at THz frequencies. Simulations show that with appropriate structural parameters the birefringence of the dielectric metamaterial can remain flat and is above 0.7 within a broad band. Moreover, the metamaterial can be designed as a broadband quarter wave plate. A sample metamaterial was fabricated and tested to prove the validity of the simulations, and the sample could work as a quarter wave plate at 1.76 THz. The all-dielectric metamaterial that we proposed is of great significance for high performance THz polarization converters.

  10. Preparation, crystal structure, and dielectric characterization of Li2W2O7 ceramic at RF and microwave frequency range

    Directory of Open Access Journals (Sweden)

    Jinwu Chen

    2017-02-01

    Full Text Available Single phase Li2W2O7 with anorthic structure was prepared by the conventional solid-state reaction method at 550∘C and the anorthic structure was stable up to 660∘C. The dielectric properties at radio frequency (RF and microwave frequency range were characterized. The sample sintered at 640∘C exhibited the optimum microwave dielectric properties with a relative permittivity of 12.2, a quality factor value of 17,700GHz (at 9.8GHz, and a temperature coefficient of the resonant frequency of −232ppm/∘C as well as a high relative density ∼94.1%. Chemical compatibility measurement indicated Li2W2O7 did not react with aluminum electrodes when sintered at 640∘C for 4h.

  11. Radio frequency and capacitive sensors for dielectric characterization of low-conductivity media

    Science.gov (United States)

    Sheldon, Robert T.

    Low-conductivity media are found in a vast number of applications, for example as electrical insulation or as the matrix polymer in high strength-to-weight ratio structural composites. In some applications, these materials are subjected to extreme environmental, thermal, and mechanical conditions that can affect the material's desired performance. In a more general sense, a medium may be comprised of one or more layers with unknown material properties that may affect the desired performance of the entire structure. It is often, therefore, of great import to be able to characterize the material properties of these media for the purpose of estimating their future performance in a certain application. Low-conductivity media, or dielectrics, are poor electrical conductors and permit electromagnetic waves and static electric fields to pass through with minimal attenuation. The amount of electrical energy that may be stored (and lost) in these fields depends directly upon the material property, permittivity, which is generally complex, frequency-dependent and has a measurable effect on sensors designed to characterize dielectric media. In this work, two different types of dielectric sensors: radio frequency resonant antennas and lower-frequency (work, the capability of characterizing multilayer dielectric structures is studied using a patch antenna, a type of antenna that is primarily designed for data communications in the microwave bands but has application in the field of nondestructive evaluation as well. Each configuration of a patch antenna has a single lowest resonant (dominant mode) frequency that is dependent upon the antenna's substrate material and geometry as well as the permittivity and geometry of exterior materials. Here, an extant forward model is validated using well-characterized microwave samples and a new method of resonant frequency and quality factor determination from measured data is presented. Excellent agreement between calculated and measured

  12. Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

    Science.gov (United States)

    Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

    1998-03-01

    We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.

  13. Microscopic theoretical study of frequency dependent dielectric constant of heavy fermion systems

    Science.gov (United States)

    Shadangi, Keshab Chandra; Rout, G. C.

    2017-05-01

    The dielectric polarization and the dielectric constant plays a vital role in the deciding the properties of the Heavy Fermion Systems. In the present communication we consider the periodic Anderson's Model which consists of conduction electron kinetic energy, localized f-electron kinetic energy and the hybridization between the conduction and localized electrons, besides the Coulomb correlation energy. We calculate dielectric polarization which involves two particle Green's functions which are calculated by using Zubarev's Green's function technique. Using the equations of motion of the fermion electron operators. Finally, the temperature and frequency dependent dielectric constant is calculated from the dielectric polarization function. The charge susceptibility and dielectric constant are computed numerically for different physical parameters like the position (Ef) of the f-electron level with respect to fermi level, the strength of the hybridization (V) between the conduction and localized f-electrons, Coulomb correlation potential temperature and optical phonon wave vector (q). The results will be discussed in a reference to the experimental observations of the dielectric constants.

  14. Dielectric properties of almond kernels associated with radio frequency and microwave pasteurization

    Science.gov (United States)

    Li, Rui; Zhang, Shuang; Kou, Xiaoxi; Ling, Bo; Wang, Shaojin

    2017-02-01

    To develop advanced pasteurization treatments based on radio frequency (RF) or microwave (MW) energy, dielectric properties of almond kernels were measured by using an open-ended coaxial-line probe and impedance analyzer at frequencies between 10 and 3000 MHz, moisture contents between 4.2% to 19.6% w.b. and temperatures between 20 and 90 °C. The results showed that both dielectric constant and loss factor of the almond kernels decreased sharply with increasing frequency over the RF range (10-300 MHz), but gradually over the measured MW range (300-3000 MHz). Both dielectric constant and loss factor of almond kernels increased with increasing temperature and moisture content, and largely enhanced at higher temperature and moisture levels. Quadratic polynomial equations were developed to best fit the relationship between dielectric constant or loss factor at 27, 40, 915 or 2450 MHz and sample temperature/moisture content with R2 greater than 0.967. Penetration depth of electromagnetic wave into samples decreased with increasing frequency (27-2450 MHz), moisture content (4.2-19.6% w.b.) and temperature (20-90 °C). The temperature profiles of RF heated almond kernels under three moisture levels were made using experiment and computer simulation based on measured dielectric properties. Based on the result of this study, RF treatment has potential to be practically used for pasteurization of almond kernels with acceptable heating uniformity.

  15. An improved model for the dielectric constant of sea water at microwave frequencies

    Science.gov (United States)

    Klein, L. A.; Swift, C. T.

    1977-01-01

    The advent of precision microwave radiometry has placed a stringent requirement on the accuracy with which the dielectric constant of sea water must be known. To this end, measurements of the dielectric constant have been conducted at S-band and L-band with a quoted uncertainty of tenths of a percent. These and earlier results are critically examined, and expressions are developed which will yield computations of brightness temperature having an error of no more than 0.3 K for an undisturbed sea at frequencies lower than X-band. At the higher microwave and millimeter wave frequencies, the accuracy is in question because of uncertainties in the relaxation time and the dielectric constant at infinite frequency.

  16. The low-frequency dielectric properties of octopus arm muscle measured in vivo

    International Nuclear Information System (INIS)

    Hart, F.X.; Toll, R.B.; Berner, N.J.; Bennett, N.H.

    1996-01-01

    The conductance and capacitance of octopus arm are measured in vivo over the frequency range 5 Hz to 1 MHz. Measurement of these parameters for a number of electrode separations permits the determination of the variations in tissue conductivity and dielectric constant with frequency. In the range 1-100 kHz the conductivity is independent of the frequency f and the dielectric constant varies as f -1 . These results, in conjunction with those reported previously for frog skeletal muscle, are consistent with the fractal model for the dielectric properties of animal tissue proposed by Dissado. Transformation of the results to complex impedance spectra indicates the presence of a dispersion above 100 kHz. (author)

  17. Self-Healing, High-Permittivity Silicone Dielectric Elastomer

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

    2016-01-01

    possesses high dielectric permittivity and consists of an interpenetrating polymer network of silicone elastomer and ionic silicone species that are cross-linked through proton exchange between amines and acids. The ionically cross-linked silicone provides self-healing properties after electrical breakdown...... or cuts made directly to the material due to the reassembly of the ionic bonds that are broken during damage. The dielectric elastomers presented in this paper pave the way to increased lifetimes and the ability of dielectric elastomers to survive millions of cycles in high-voltage conditions....

  18. Super soft silicone elastomers with high dielectric permittivity

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Hvilsted, Søren

    2015-01-01

    Dielectric elastomers (DEs) have many favourable properties. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young’s modulus and increasing the dielectric permittivity of silicone...... elastomers. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. New soft elastomer matrices with high dielectric permittivity and low Young’s modulus, with no loss of mechanical stability, were prepared by two different...... approaches using chloropropyl-functional silicone polymers. The first approach was based on synthesised chloropropyl-functional copolymers that were cross-linkable and thereby formed the basis of new silicone networks with high dielectric permittivity (e.g. a 43% increase). These networks were soft without...

  19. Functional silicone copolymers and elastomers with high dielectric permittivity

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Daugaard, Anders Egede; Hvilsted, Søren

    Dielectric elastomers (DEs) are a new and promising transducer technology and are often referred to as ‘artificial muscles’, due to their ability to undergo large deformations when stimulated by electric fields. DEs consist of a soft and thin elastomeric film sandwiched between compliant electrodes......, thereby forming a capacitor [1]. Silicone elastomers are one of the most used materials for DEs due to their high efficiency, fast response times and low viscous losses. The major disadvantage of silicone elastomers is that they possess relatively low dielectric permittivity, which means that a high...... electrical field is necessary to operate the DE. The necessary electrical field can be lowered by creating silicone elastomers with higher dielectric permittivity, i.e. with a higher energy density.The aim of this work is to create new and improved silicone elastomers with high dielectric permittivity...

  20. Synthetic Strategies for High Dielectric Constant Silicone Elastomers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt

    synthetic strategies were developed in this Ph.D. thesis, in order to create silicone elastomers with high dielectric constants and thereby higher energy densities. The work focused on maintaining important properties such as dielectric loss, electrical breakdown strength and elastic modulus....... The methodology therefore involved chemically grafting high dielectric constant chemical groups onto the elastomer network, as this would potentially provide a stable elastomer system upon continued activation of the material. The first synthetic strategy involved the synthesis of a new type of cross...... extender’ that allowed for chemical modifications such as Cu- AAC. This route was promising for one-pot elastomer preparation and as a high dielectric constant additive to commercial silicone systems. The second approach used the borane-catalysed Piers-Rubinsztajn reaction to form spatially well...

  1. Equilateral Triangular Dielectric Resonator Nantenna at Optical Frequencies for Energy Harvesting

    Directory of Open Access Journals (Sweden)

    Waleed Tariq Sethi

    2015-01-01

    Full Text Available The last decade has witnessed a remarkable growth in the telecommunication industry. With the introduction of smart gadgets, the demand for high data rate and bandwidth for wireless applications have increased exponentially at the cost of exponential consumption of energy. The latter is pushing the research and industry communities to devise green communication solutions that require the design of energy saving devices and techniques in one part and ambient energy harvesting techniques in the other part. With the advent of nanocomponents fabrication technology, researchers are now able to tap into the THz frequency regime and fabricate optical low profile antennas at a nanoscale. Optical antennas have proved their potential and are revolutionizing a class of novel optical detectors, interconnectors, sensors, and energy harvesting related fields. Authors in this paper propose an equilateral triangular dielectric resonator nantenna (ETDRNA working at 193.5 THz standard optical frequency. The simulated antenna achieves an impedance bandwidth from 192.3 THz to 197.3 THz with an end-fire directivity of 8.6 dBi, covering the entire standard optical window of C-band. Numerical demonstrations prove the efficiency of the nantenna at the frequencies of interest, making it a viable candidate for future green energy harvesting and high speed optical applications.

  2. High frequency asymptotic methods

    International Nuclear Information System (INIS)

    Bouche, D.; Dessarce, R.; Gay, J.; Vermersch, S.

    1991-01-01

    The asymptotic methods allow us to compute the interaction of high frequency electromagnetic waves with structures. After an outline of their foundations with emphasis on the geometrical theory of diffraction, it is shown how to use these methods to evaluate the radar cross section (RCS) of complex tri-dimensional objects of great size compared to the wave-length. The different stages in simulating phenomena which contribute to the RCS are reviewed: physical theory of diffraction, multiple interactions computed by shooting rays, research for creeping rays. (author). 7 refs., 6 figs., 3 insets

  3. Low frequency ac conduction and dielectric relaxation in poly(N ...

    Indian Academy of Sciences (India)

    The ac conductivity and dielectric constant of poly(N-methyl pyrrole) thin films have been investigated in the temperature range 77–350 K and in the frequency range 102–106 Hz. The well defined loss peaks have been observed in the temperature region where measured ac conductivity approaches dc conductivity.

  4. Off Axis Growth of Strontium Titanate Films with High Dielectric Constant Tuning and Low Loss

    Science.gov (United States)

    Kampangkeaw, Satreerat

    2002-03-01

    Using off-axis pulsed laser deposition, we have grown strontium titanate (STO) films on neodymium gallate (NGO) and lanthanum aluminate (LAO) substrates. We measured the film dielectric constant and loss tangent as a function of temperature in the 10kHz to 1 MHz frequency range. We found that the loss is less than 0.01 We also obtained a figure of merit from the relative variation of the dielectric constant divided by the loss tangent. The obtained figured of merit at 35K and 1MHz is about 1000 comparable to bulk values. The dielectric constant of these films can be changed by a factor of 4-8 in the presence of a DC electric field up to 5V/μm. The films show significant variations of dielectric properties grown on different substrates at different locations respect to the axis of the plume. The STO films on LAO having high dielectric constant and dielectric tuning were grown in region near the center of the plume. On the other hand, STO on NGO shows this effect only on the films grown far from the plume axis.

  5. High Frequency Oscillatory Ventilation

    Directory of Open Access Journals (Sweden)

    AC Bryan

    1996-01-01

    Full Text Available High frequency oscillatory (HFO ventilation using low tidal volume and peak airway pressures is extremely efficient at eliminating carbon dioxide and raising pH in the newborn infant with acute respiratory failure. Improvement in oxygenation requires a strategy of sustained or repetitive inflations to 25 to 30 cm H2O in order to place the lung on the deflation limb of the pressure-volume curve. This strategy has also been shown to decrease the amount of secondary lung injury in animal models. Experience of the use of HFO ventilation as a rescue therapy as well as several published controlled trials have shown improved outcomes and a decrease in the use of extracorporeal membrane oxygenation when it has been used in newborns.

  6. Conversion of Dielectric Data from the Time Domain to the Frequency Domain

    Directory of Open Access Journals (Sweden)

    Vladimir Durman

    2005-01-01

    Full Text Available Polarisation and conduction processes in dielectric systems can be identified by the time domain or the frequency domain measurements. If the systems is a linear one, the results of the time domain measurements can be transformed into the frequency domain, and vice versa. Commonly, the time domain data of the absorption conductivity are transformed into the frequency domain data of the dielectric susceptibility. In practice, the relaxation are mainly evaluated by the frequency domain data. In the time domain, the absorption current measurement were prefered up to now. Recent methods are based on the recovery voltage measurements. In this paper a new method of the recovery data conversion from the time the frequency domain is proposed. The method is based on the analysis of the recovery voltage transient based on the Maxwell equation for the current density in a dielectric. Unlike the previous published solutions, the Laplace fransform was used to derive a formula suitable for practical purposes. the proposed procedure allows also calculating of the insulation resistance and separating the polarisation and conduction losses.

  7. Nanocomposites of TiO2/cyanoethylated cellulose with ultra high dielectric constants

    International Nuclear Information System (INIS)

    Madusanka, Nadeesh; Shivareddy, Sai G; Hiralal, Pritesh; Choi, Youngjin; Amaratunga, Gehan A J; Eddleston, Mark D; Oliver, Rachel A

    2016-01-01

    A novel dielectric nanocomposite containing a high permittivity polymer, cyanoethylated cellulose (CRS) and TiO 2 nanoparticles was successfully prepared with different weight percentages (10%, 20% and 30%) of TiO 2 . The intermolecular interactions and morphology within the polymer nanocomposites were analysed. TiO 2 /CRS nanofilms on SiO 2 /Si wafers were used to form metal–insulator–metal type capacitors. Capacitances and loss factors in the frequency range of 1 kHz–1 MHz were measured. At 1 kHz CRS-TiO 2 nanocomposites exhibited ultra high dielectric constants of 118, 176 and 207 for nanocomposites with 10%, 20% and 30% weight of TiO 2 respectively, significantly higher than reported values of pure CRS (21), TiO 2 (41) and other dielectric polymer-TiO 2 nanocomposite films. Furthermore, all three CRS-TiO 2 nanocomposites show a loss factor <0.3 at 1 kHz and low leakage current densities (10 −6 –10 −7 A cm −2 ). Leakage was studied using conductive atomic force microscopy and it was observed that the leakage is associated with TiO 2 nanoparticles embedded in the CRS polymer matrix. A new class of ultra high dielectric constant hybrids using nanoscale inorganic dielectrics dispersed in a high permittivity polymer suitable for energy management applications is reported. (paper)

  8. High frequency single mode traveling wave structure for particle acceleration

    Energy Technology Data Exchange (ETDEWEB)

    Ivanyan, M.I.; Danielyan, V.A.; Grigoryan, B.A.; Grigoryan, A.H. [CANDLE Synchrotron Research Institute, 0040 Yerevan (Armenia); Tsakanian, A.V. [CANDLE Synchrotron Research Institute, 0040 Yerevan (Armenia); Technische Universität Darmstadt, Institut TEMF, 64289 Darmstadt (Germany); Tsakanov, V.M., E-mail: tsakanov@asls.candle.am [CANDLE Synchrotron Research Institute, 0040 Yerevan (Armenia); Vardanyan, A.S.; Zakaryan, S.V. [CANDLE Synchrotron Research Institute, 0040 Yerevan (Armenia)

    2016-09-01

    The development of the new high frequency slow traveling wave structures is one of the promising directions in accomplishment of charged particles high acceleration gradient. The disc and dielectric loaded structures are the most known structures with slowly propagating modes. In this paper a large aperture high frequency metallic two-layer accelerating structure is studied. The electrodynamical properties of the slowly propagating TM{sub 01} mode in a metallic tube with internally coated low conductive thin layer are examined.

  9. High-Efficiency Dielectric Metasurfaces for Polarization-Dependent Terahertz Wavefront Manipulation

    KAUST Repository

    Zhang, Huifang

    2017-11-30

    Recently, metasurfaces made up of dielectric structures have drawn enormous attentions in the optical and infrared regimes due to their high efficiency and designing freedom in manipulating light propagation. Such advantages can also be introduced to terahertz frequencies where efficient functional devices are still lacking. Here, polarization-dependent all-silicon terahertz dielectric metasurfaces are proposed and experimentally demonstrated. The metasurfaces are composed of anisotropic rectangular-shaped silicon pillars on silicon substrate. Each metasurface holds dual different functions depending on the incident polarizations. Furthermore, to suppress the reflection loss and multireflection effect in practical applications, a high-performance polarization-independent antireflection silicon pillar array is also proposed, which can be patterned at the other side of the silicon substrate. Such all-silicon dielectric metasurfaces are easy to fabricate and can be very promising in developing next-generation efficient, compact, and low-cost terahertz functional devices.

  10. High field dielectric properties of anisotropic polymer-ceramic composites

    International Nuclear Information System (INIS)

    Tomer, V.; Randall, C. A.

    2008-01-01

    Using dielectrophoretic assembly, we create anisotropic composites of BaTiO 3 particles in a silicone elastomer thermoset polymer. We study a variety of electrical properties in these composites, i.e., permittivity, dielectric breakdown, and energy density as function of ceramic volume fraction and connectivity. The recoverable energy density of these electric-field-structured composites is found to be highly dependent on the anisotropy present in the system. Our results indicate that x-y-aligned composites exhibit higher breakdown strengths along with large recoverable energy densities when compared to 0-3 composites. This demonstrates that engineered anisotropy can be employed to control dielectric breakdown strengths and nonlinear conduction at high fields in heterogeneous systems. Consequently, manipulation of anisotropy in high-field dielectric properties can be exploited for the development of high energy density polymer-ceramic systems

  11. High thermal conductivity lossy dielectric using co-densified multilayer configuration

    Science.gov (United States)

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-06-17

    Systems and methods are described for loss dielectrics. A method of manufacturing a lossy dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer and then densifying together. The systems and methods provide advantages because the lossy dielectrics are less costly and more environmentally friendly than the available alternatives.

  12. Frequency splitter based on the directional emission from surface modes in dielectric photonic crystal structures.

    Science.gov (United States)

    Tasolamprou, Anna C; Zhang, Lei; Kafesaki, Maria; Koschny, Thomas; Soukoulis, Costas M

    2015-06-01

    We demonstrate the numerical design and the experimental validation of frequency dependent directional emission from a dielectric photonic crystal structure. The wave propagates through a photonic crystal line-defect waveguide, while a surface layer at the termination of the photonic crystal enables the excitation of surface modes and a subsequent grating layer transforms the surface energy into outgoing propagating waves of the form of a directional beam. The angle of the beam is controlled by the frequency and the structure operates as a frequency splitter in the intermediate and far field region.

  13. Development of a new medium frequency EM device: Mapping soil water content variations using electrical conductivity and dielectric permittivity

    Science.gov (United States)

    Kessouri, P.; Buvat, S.; Tabbagh, A.

    2012-12-01

    Both electrical conductivity and dielectric permittivity of soil are influenced by its water content. Dielectric permittivity is usually measured in the high frequency range, using GPR or TDR, where the sensitivity to water content is high. However, its evaluation is limited by a low investigation depth, especially for clay rich soils. Electrical conductivity is closely related not only to soil water content, but also to clay content and soil structure. A simultaneous estimation of these electrical parameters can allow the mapping of soil water content variations for an investigation depth close to 1m. In order to estimate simultaneously both soil electrical conductivity and dielectric permittivity, an electromagnetic device working in the medium frequency range (between 100 kHz and 10 MHz) has been designed. We adopted Slingram geometry for the EM prototype: its PERP configuration (vertical transmission loop Tx and horizontal measuring loop Rx) was defined using 1D ground models. As the required investigation depth is around 1m, the coil spacing was fixed to 1.2m. This prototype works in a frequency range between 1 and 5 MHz. After calibration, we tested the response of prototype to objects with known properties. The first in situ measurements were led on experimental sites with different types of soils and different water content variations (artificially created or natural): sandy alluvium on a plot of INRA (French National Institute for Agricultural Research) in Orléans (Centre, France), a clay-loam soil on an experimental site in Estrée-Mons (Picardie, France) and fractured limestone at the vicinity of Grand (Vosges, France). In the case of the sandy alluvium, the values of dielectric permittivity measured are close to those of HF permittivity and allow the use of existing theoretical models to determine the soil water content. For soils containing higher amount of clay, the coupled information brought by the electrical conductivity and the dielectric

  14. High frequency breakdown voltage

    International Nuclear Information System (INIS)

    Chu, Thanh Duy.

    1992-03-01

    This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

  15. High-pressure cell for simultaneous dielectric and neutron spectroscopy

    DEFF Research Database (Denmark)

    Sanz, Alejandro; Hansen, Henriette Wase; Jakobsen, Bo

    2018-01-01

    In this article, we report on the design, manufacture, and testing of a high-pressure cell for simultaneous dielectric and neutron spectroscopy. This cell is a unique tool for studying dynamics on different time scales, from kilo- to picoseconds, covering universal features such as the α relaxation......, a cylindrical capacitor is positioned within the bore of the high-pressure container. The capacitor consists of two concentric electrodes separated by insulating spacers. The performance of this setup has been successfully verified by collecting simultaneous dielectric and neutron spectroscopy data...

  16. Change in Dielectric Properties in the Microwave Frequency Region of Polypyrrole–Coated Textiles during Aging

    Directory of Open Access Journals (Sweden)

    Eva Hakansson

    2016-07-01

    Full Text Available Complex permittivity of conducting polypyrrole (PPy-coated Nylon-Lycra textiles is measured using a free space transmission measurement technique over the frequency range of 1–18 GHz. The aging of microwave dielectric properties and reflection, transmission and absorption for a period of 18 months is demonstrated. PPy-coated fabrics are shown to be lossy over the full frequency range. The levels of absorption are shown to be higher than reflection in the tested samples. This is attributed to the relatively high resistivity of the PPy-coated fabrics. Both the dopant concentration and polymerisation time affect the total shielding effectiveness and microwave aging behaviour. Distinguishing either of these two factors as being exclusively the dominant mechanism of shielding effectiveness is shown to be difficult. It is observed that the PPy-coated Nylon-Lycra samples with a p-toluene sulfonic acid (pTSA concentration of 0.015 M and polymerisation times of 60 min and 180 min have 37% and 26% decrease in total transmission loss, respectively, upon aging for 72 weeks at room temperature (20 °C, 65% Relative humidity (RH. The concentration of the dopant also influences the microwave aging behaviour of the PPy-coated fabrics. The samples with a higher dopant concentration of 0.027 mol/L pTSA are shown to have a transmission loss of 32.6% and 16.5% for short and long polymerisation times, respectively, when aged for 72 weeks. The microwave properties exhibit better stability with high dopant concentration and/or longer polymerization times. High pTSA dopant concentrations and/or longer polymerisation times result in high microwave insertion loss and are more effective in reducing the transmission and also increasing the longevity of the electrical properties.

  17. Inkjet-printed thin film radio-frequency capacitors based on sol-gel derived alumina dielectric ink

    KAUST Repository

    McKerricher, Garret

    2017-05-03

    There has been significant interest in printing radio frequency passives, however the dissipation factor of printed dielectric materials has limited the quality factor achievable. Al2O3 is one of the best and widely implemented dielectrics for RF passive electronics. The ability to spatially pattern high quality Al2O3 thin films using, for example, inkjet printing would tremendously simplify the incumbent fabrication processes – significantly reducing cost and allowing for the development of large area electronics. To-date, particle based Al2O3 inks have been explored as dielectrics, although several drawbacks including nozzle clogging and grain boundary formation in the films hinder progress. In this work, a particle free Al2O3 ink is developed and demonstrated in RF capacitors. Fluid and jetting properties are explored, along with control of ink spreading and coffee ring suppression. The liquid ink is heated to 400 °C decomposing to smooth Al2O3 films ~120 nm thick, with roughness of <2 nm. Metal-insulator-metal capacitors, show high capacitance density >450 pF/mm2, and quality factors of ~200. The devices have high break down voltages, >25 V, with extremely low leakage currents, <2×10−9 A/cm2 at 1 MV/cm. The capacitors compare well with similar Al2O3 devices fabricated by atomic layer deposition.

  18. Tunable optical response at the plasmon-polariton frequency in dielectric-graphene-metamaterial systems

    Science.gov (United States)

    Calvo-Velasco, D. M.; Porras-Montenegro, N.

    2018-04-01

    By using the scattering matrix formalism, it is studied the optical properties of one dimensional photonic crystals made of multiple layers of dielectric and uniaxial anisotropic single negative electric metamaterial with Drude type responses, with inclusions of graphene in between the dielectric-dielectric interfaces (DGMPC). The transmission spectra for transverse electric (TE) and magnetic (TM) polarization are presented as a function of the incidence angle, the graphene chemical potential, and the metamaterial plasma frequencies. It is found for the TM polarization the tunability of the DGMPC optical response with the graphene chemical potential, which can be observed by means of transmission or reflexion bands around the metamaterial plasmon-polariton frequency, with bandwidths depending on both the incidence angle and the metamaterial plasma frequency. Also, the transmission band is observed when losses in the metamaterial slabs are considered for finite systems. The conditions for the appearance of these bands are shown analytically. We consider this work contributes to open new possibilities to the design of photonic devices with DGMPCs.

  19. Possible Lead Free Nanocomposite Dielectrics for High Energy Storage Applications

    Directory of Open Access Journals (Sweden)

    Srinivas Kurpati

    2017-03-01

    Full Text Available There is an increasing demand to improve the energy density of dielectric capacitors for satisfying the next generation material systems. One effective approach is to embed high dielectric constant inclusions such as lead zirconia titanate in polymer matrix. However, with the increasing concerns on environmental safety and biocompatibility, the need to expel lead (Pb from modern electronics has been receiving more attention. Using high aspect ratio dielectric inclusions such as nanowires could lead to further enhancement of energy density. Therefore, the present brief review work focuses on the feasibility of development of a lead-free nanowire reinforced polymer matrix capacitor for energy storage application. It is expected that Lead-free sodium Niobate nanowires (NaNbO3 and Boron nitride will be a future candidate to be synthesized using simple hydrothermal method, followed by mixing them with polyvinylidene fluoride (PVDF/ divinyl tetramethyl disiloxanebis (benzocyclobutene matrix using a solution-casting method for Nanocomposites fabrication. The energy density of NaNbO3 and BN based composites are also be compared with that of lead-containing (PbTiO3/PVDF Nano composites to show the feasibility of replacing lead-containing materials from high-energy density dielectric capacitors. Further, this paper explores the feasibility of these materials for space applications because of high energy storage capacity, more flexibility and high operating temperatures. This paper is very much useful researchers who would like to work on polymer nanocomposites for high energy storage applications.

  20. New perovskite-related oxides having high dielectric constant ...

    Indian Academy of Sciences (India)

    Unknown

    static and dynamic random access memories, the static dielectric constant of the material. ¶Dedicated to .... 1100°C. It is also observed from the SEM pictures that the materials are highly dense .... Both these oxides merit attention for their.

  1. Dielectric response in high Tc superconductors

    International Nuclear Information System (INIS)

    Lopez-Aguilar, F.; Costa-Quintana, J.; Febrero, F.; Aurell, M.T.; Sanchez, A.; Munoz, J.S.; Balle, S.

    1989-01-01

    The random phase approximation integral equation is solved for obtaining the dynamically screened interaction between d electrons (W d (ω)), p electrons (W p (ω)) and p/d electrons (W pd (ω)). Some characteristic divergences of this last interaction correspond to the plasmon frequencies which one can relate with the effective masses of the p and d electrons close to E F by means of the relation ω p1 /ω p2 = (m 2 /m 1 ) 1/2 . Another feature of this W pd (ω) interaction is the attractive character for low frequencies. The lowest frequency for which ε pd = O decreases when the localization of states close to E F arising from the x 2 - y 2 symmetry increases

  2. Dielectric response in high Tc superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Aguilar, F.; Costa-Quintana, J.; Febrero, F.; Aurell, M.T.; Sanchez, A.; Munoz, J.S. (Dept. de Fisica, Grupo de Electromagnetismo, Univ. Autonoma de Barcelona (Spain)); Balle, S. (Dept. de Fisica, Univ. de les Illes Balears, Palma de Mallorca (Spain))

    1989-12-01

    The random phase approximation integral equation is solved for obtaining the dynamically screened interaction between d electrons (W{sub d}({omega})), p electrons (W{sub p}({omega})) and p/d electrons (W{sub pd}({omega})). Some characteristic divergences of this last interaction correspond to the plasmon frequencies which one can relate with the effective masses of the p and d electrons close to E{sub F} by means of the relation {omega}{sub p1}/{omega}{sub p2} = (m{sub 2}/m{sub 1}){sup 1/2}. Another feature of this W{sub pd}({omega}) interaction is the attractive character for low frequencies. The lowest frequency for which {epsilon}{sub pd} = 0 decreases when the localization of states close to E{sub F} arising from the x{sup 2}-y{sup 2} symmetry increases. (orig.).

  3. Coaxial two-channel high-gradient dielectric wakefield accelerator

    Directory of Open Access Journals (Sweden)

    G. V. Sotnikov

    2009-06-01

    Full Text Available A new scheme for a dielectric wakefield accelerator is proposed that employs a cylindrical multizone dielectric structure configured as two concentric dielectric tubes with outer and inner vacuum channels for drive and accelerated bunches. Analytical and numerical studies have been carried out for such coaxial dielectric-loaded structures (CDS for high-gradient acceleration. An analytical theory of wakefield excitation by particle bunches in a multizone CDS has been formulated. Numerical calculations are presented for an example of a CDS using dielectric tubes with dielectric permittivity 5.7, having external diameters of 2.121 and 0.179 mm with inner diameters of 2.095 and 0.1 mm. An annular 5 GeV, 6 nC electron bunch with rms length of 0.035 mm energizes a wakefield on the structure axis having an accelerating gradient of ∼600  MeV/m with a transformer ratio ∼8∶1. The period of the accelerating field is ∼0.33  mm. If the width of the drive bunch channel is decreased, it is possible to obtain an accelerating gradient of >1  GeV/m while keeping the transformer ratio approximately the same. Full numerical simulations using a particle-in-cell code have confirmed results of the linear theory and furthermore have shown the important influence of the quenching wave that restricts the region of the wakefield to within several periods following the drive bunch. Numerical simulations for another example have shown nearly stable transport of drive and accelerated bunches through the CDS, using a short train of drive bunches.

  4. Dielectric elastomers, with very high dielectric permittivity, based on silicone and ionic interpenetrating networks

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Hvilsted, Søren

    2015-01-01

    permittivity and the Young's modulus of the elastomer. One system that potentially achieves this involves interpenetrating polymer networks (IPNs), based on commercial silicone elastomers and ionic networks from amino- and carboxylic acid-functional silicones. The applicability of these materials as DEs...... are obtained while dielectric breakdown strength and Young's modulus are not compromised. These good overall properties stem from the softening effect and very high permittivity of ionic networks – as high as ε′ = 7500 at 0.1 Hz – while the silicone elastomer part of the IPN provides mechanical integrity...

  5. Frequency dispersion analysis of thin dielectric MOS capacitor in a five-element model

    Science.gov (United States)

    Zhang, Xizhen; Zhang, Sujuan; Zhu, Huichao; Pan, Xiuyu; Cheng, Chuanhui; Yu, Tao; Li, Xiangping; Cheng, Yi; Xing, Guichao; Zhang, Daming; Luo, Xixian; Chen, Baojiu

    2018-02-01

    An Al/ZrO2/IL/n-Si (IL: interface layer) MOS capacitor has been fabricated by metal organic decomposition of ZrO2 and thermal deposition Al. We have measured parallel capacitance (C m) and parallel resistance (R m) versus bias voltage curves (C m, R m-V) at different AC signal frequency (f), and C m, R m-f curves at different bias voltage. The curves of C m, R m-f measurements show obvious frequency dispersion in the range of 100 kHz-2 MHz. The energy band profile shows that a large voltage is applied on the ZrO2 layer and IL at accumulation, which suggests possible dielectric polarization processes by some traps in ZrO2 and IL. C m, R m-f data are used for frequency dispersion analysis. To exclude external frequency dispersion, we have extracted the parameters of C (real MOS capacitance), R p (parallel resistance), C IL (IL capacitance), R IL (IL resistance) and R s (Si resistance) in a five-element model by using a three-frequency method. We have analyzed intrinsic frequency dispersion of C, R p, C IL, R IL and R s by studying the dielectric characteristics and Si surface layer characteristics. At accumulation, the dispersion of C and R p is attributed to dielectric polarization such as dipolar orientation and oxide traps. The serious dispersion of C IL and R IL are relative to other dielectric polarization, such as border traps and fixed oxide traps. The dispersion of R s is mainly attributed to contact capacitance (C c) and contact resistance (R c). At depletion and inversion, the frequency dispersion of C, R p, C IL, R IL, and R s are mainly attributed to the depletion layer capacitance (C D). The interface trap capacitance (C it) and interface trap resistance (R it) are not dominant for the dispersion of C, R p, C IL, R IL, and R s.

  6. Electron current extraction from radio frequency excited micro-dielectric barrier discharges

    International Nuclear Information System (INIS)

    Wang, Jun-Chieh; Kushner, Mark J.; Leoni, Napoleon; Birecki, Henryk; Gila, Omer

    2013-01-01

    Micro dielectric barrier discharges (mDBDs) consist of micro-plasma devices (10–100 μm diameter) in which the electrodes are fully or partially covered by dielectrics, and often operate at atmospheric pressure driven with radio frequency (rf) waveforms. In certain applications, it may be desirable to extract electron current out of the mDBD plasma, which necessitates a third electrode. As a result, the physical structure of the m-DBD and the electron emitting properties of its materials are important to its operation. In this paper, results from a two-dimensional computer simulation of current extraction from mDBDs sustained in atmospheric pressure N 2 will be discussed. The mDBDs are sandwich structures with an opening of tens-of-microns excited with rf voltage waveforms of up to 25 MHz. Following avalanche by electron impact ionization in the mDBD cavity, the plasma can be expelled from the cavity towards the extraction electrode during the part of the rf cycle when the extraction electrode appears anodic. The electron current extraction can be enhanced by biasing this electrode. The charge collection can be controlled by choice of rf frequency, rf driving voltage, and permittivity of the dielectric barrier.

  7. All-dielectric metamaterial frequency selective surface based on spatial arrangement ceramic resonators

    Science.gov (United States)

    Li, Liyang; Wang, Jun; Feng, Mingde; Ma, Hua; Wang, Jiafu; Du, Hongliang; Qu, Shaobo

    In this paper, we demonstrate a method of designing all-dielectric metamaterial frequency selective surface (FSS) with ceramic resonators in spatial arrangement. Compared with the traditional way, spatial arrangement provides a flexible way to handle the permutation and combination of different ceramic resonators. With this method, the resonance response can be adjusted easily to achieve pass/stop band effects. As an example, a stop band spatial arrangement all-dielectric metamaterial FSS is designed. Its working band is in 11.65-12.23GHz. By adjusting permittivity and geometrical parameters of ceramic resonators, we can easily modulate the resonances, band pass or band stop characteristic, as well as the working band.

  8. Radio-frequency dielectric properties of some tropical African leaf vegetables

    International Nuclear Information System (INIS)

    Laogun, A.A.; Ajayi, N.O.

    1985-03-01

    The variation of the relative permittivity epsilon'sub(r), the loss factor epsilon'' and a.c. conductivity σ with the frequency of an applied electromagnetic field over the range 0.5 to 50 MHz has been studied in the leaf and stem tissues of three tropical vegetables viz - amaranthus, bitter leaf and okra. This is with a view to investigate the molecular structure and dielectric heating characteristics of the leaves and stems in the different vegetables considered. The Cole-Cole plots of the data showed that in all cases, both the stems and leaves exhibited a spread of relaxation times, indicating heterogeneity of structure. In general, the a.c. conductivity and the dielectric energy loss factor also appear to be much larger in the vegetable stems than in the leaves, suggesting that energy dissipation in stems is greater than in the leaves. (author)

  9. High current electron beam acceleration in dielectric-filled RF cavities

    International Nuclear Information System (INIS)

    Faehl, R.J.; Keinigs, R.K.

    1996-01-01

    The acceleration of charged particles in radio frequency (RF) cavities is a widely used mode in high energy accelerators. Advantages include very high accelerating gradients and very stable phase control. A traditional limitation for such acceleration has been their use for intense, high current beam generation. This constraint arises from the inability to store a large amount of electromagnetic energy in the cavity and from loading effects of the beam on the cavity. The authors have studied a simple modification to transcend these limitations. Following Humphries and Huang, they have conducted analytic and numerical investigations of RF accelerator cavities in which a high dielectric constant material, such as water, replaces most of the cavity volume. This raises the stored energy in a cavity of given dimensions by a factor var-epsilon/var-epsilon 0 . For a water fill, var-epsilon/var-epsilon 0 ∼ 80, depending on the frequency. This introduction of high dielectric constant material into the cavity reduces the resonant frequencies by a factor of (var-epsilon/var-epsilon 0 ) 1/2 . This reduced operating frequency mans that existing high efficiency power supplies, at lower frequencies, can be used for an accelerator

  10. Band-gap tunable dielectric elastomer filter for low frequency noise

    Science.gov (United States)

    Jia, Kun; Wang, Mian; Lu, Tongqing; Zhang, Jinhua; Wang, Tiejun

    2016-05-01

    In the last decades, diverse materials and technologies for sound insulation have been widely applied in engineering. However, suppressing the noise radiation at low frequency still remains a challenge. In this work, a novel membrane-type smart filter, consisting of a pre-stretched dielectric elastomer membrane with two compliant electrodes coated on the both sides, is presented to control the low frequency noise. Since the stiffness of membrane dominates its acoustic properties, sound transmission band-gap of the membrane filter can be tuned by adjusting the voltage applied to the membrane. The impedance tube experiments have been carried out to measure the sound transmission loss (STL) of the filters with different electrodes, membrane thickness and pre-stretch conditions. The experimental results show that the center frequency of sound transmission band-gap mainly depends on the stress in the dielectric elastomer, and a large band-gap shift (more than 60 Hz) can be achieved by tuning the voltage applied to the 85 mm diameter VHB4910 specimen with pre-stretch {λ }0=3. Based on the experimental results and the assumption that applied electric field is independent of the membrane behavior, 3D finite element analysis has also been conducted to calculate the membrane stress variation. The sound filter proposed herein may provide a promising facility to control low frequency noise source with tonal characteristics.

  11. Extrinsic and intrinsic contributions for dielectric behavior of La{sub 2}NiMnO{sub 6} ceramic

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Zhenzhu, E-mail: czz03@163.com [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China); Liu, Xiaoting; He, Weiyan [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China); Ruan, Xuezheng [Key Laboratory of Inorganic Function Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Gao, Yanfang; Liu, Jinrong [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China)

    2015-11-15

    The influences of electrode material, DC bias and temperature on the electrical and dielectric properties of LNMO ceramic have been investigated using impedance spectroscopy and dielectric measurements. Evidences from dielectric and impedance analysis showed that the giant dielectric constant and its notable tunability originated from extrinsic contribution from interface polarization. Low temperature and high frequency dielectric characterization revealed the low intrinsic dielectric constant.

  12. Characterization of a dielectric phantom for high-field magnetic resonance imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Qi, E-mail: Qi.Duan@nih.gov; Duyn, Jeff H.; Gudino, Natalia; Zwart, Jacco A. de; Gelderen, Peter van [Advanced MRI Section, Laboratory of Functional and Molecular Imaging, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bethesda, Maryland 20892 (United States); Sodickson, Daniel K.; Brown, Ryan [The Bernard and Irene Schwartz Center for Biomedical Imaging, Department of Radiology, New York University School of Medicine, New York, New York 10016 (United States)

    2014-10-15

    Purpose: In this work, a generic recipe for an inexpensive and nontoxic phantom was developed within a range of biologically relevant dielectric properties from 150 MHz to 4.5 GHz. Methods: The recipe includes deionized water as the solvent, NaCl to primarily control conductivity, sucrose to primarily control permittivity, agar–agar to gel the solution and reduce heat diffusivity, and benzoic acid to preserve the gel. Two hundred and seventeen samples were prepared to cover the feasible range of NaCl and sucrose concentrations. Their dielectric properties were measured using a commercial dielectric probe and were fitted to a 3D polynomial to generate a recipe describing the properties as a function of NaCl concentration, sucrose concentration, and frequency. Results: Results indicated that the intuitive linear and independent relationships between NaCl and conductivity and between sucrose and permittivity are not valid. A generic polynomial recipe was developed to characterize the complex relationship between the solutes and the resulting dielectric values and has been made publicly available as a web application. In representative mixtures developed to mimic brain and muscle tissue, less than 2% difference was observed between the predicted and measured conductivity and permittivity values. Conclusions: It is expected that the recipe will be useful for generating dielectric phantoms for general magnetic resonance imaging (MRI) coil development at high magnetic field strength, including coil safety evaluation as well as pulse sequence evaluation (including B{sub 1}{sup +} mapping, B{sub 1}{sup +} shimming, and selective excitation pulse design), and other non-MRI applications which require biologically equivalent dielectric properties.

  13. Binaural beats at high frequencies.

    Science.gov (United States)

    McFadden, D; Pasanen, E G

    1975-10-24

    Binaural beats have long been believed to be audible only at low frequencies, but an interaction reminiscent of a binaural beat can sometimes be heard when different two-tone complexes of high frequency are presented to the two ears. The primary requirement is that the frequency separation in the complex at one ear be slightly different from that in the other--that is, that there be a small interaural difference in the envelope periodicities. This finding is in accord with other recent demonstrations that the auditory system is not deaf to interaural time differences at high frequencies.

  14. Improving uniformity of atmospheric-pressure dielectric barrier discharges using dual frequency excitation

    Science.gov (United States)

    Liu, Y.; Peeters, F. J. J.; Starostin, S. A.; van de Sanden, M. C. M.; de Vries, H. W.

    2018-01-01

    This letter reports a novel approach to improve the uniformity of atmospheric-pressure dielectric barrier discharges using a dual-frequency excitation consisting of a low frequency (LF) at 200 kHz and a radio frequency (RF) at 13.56 MHz. It is shown that due to the periodic oscillation of the RF electric field, the electron acceleration and thus the gas ionization is temporally modulated, i.e. enhanced and suppressed during each RF cycle. As a result, the discharge development is slowed down with a lower amplitude and a longer duration of the LF discharge current. Hence, the RF electric field facilitates improved stability and uniformity simultaneously allowing a higher input power.

  15. Superconducting high frequency high power resonators

    International Nuclear Information System (INIS)

    Hobbis, C.; Vardiman, R.; Weinman, L.

    1974-01-01

    A niobium superconducting quarter-wave helical resonator has been designed and built. The resonator has been electron-beam welded and electropolished to produce a smooth flaw-free surface. This has been followed by an anodization to produce a 1000 A layer of Nb 2 0 5 . At the resonant frequency of approximately 15 MHz the unloaded Q was approximately equal to 4.6x10 6 with minimal dielectric support. With the resonator open to the helium bath to provide cooling, and rigidly supported by a teflon cylinder, 350 V of power were transferred at a doubly loaded Q of 3500. The extrapolation of the results to a Qsub(DL) of 1000 meet the power handling criteria of one kilowatt for the intended application. (author)

  16. Transition from Townsend to radio-frequency homogeneous dielectric barrier discharge in a roll-to-roll configuration

    International Nuclear Information System (INIS)

    Bazinette, R.; Paillol, J.; Massines, F.

    2016-01-01

    The aim of this paper is to better understand the transition from Townsend to radio-frequency homogeneous dielectric barrier discharge (DBD) at atmospheric pressure. The study is done in an Ar/NH 3 Penning mixture for an electrode configuration adapted to roll-to-roll plasma surface treatment. The study was led in a frequency range running from 50 kHz up to 8.3 MHz leading to different DBD modes with a 1 mm gas gap: Glow (GDBD), Townsend (TDBD), and Radio-frequency (RF-DBD). In the frequency range between TDBD and RF-DBD, from 250 kHz to 2.3 MHz, additional discharges are observed outside the inter-electrode gas gap. Because each high voltage electrode are inside a dielectric barrel, these additional discharges occur on the side of the barrel where the gap is larger. They disappear when the RF-DBD mode is attained in the 1 mm inter-electrode gas gap, i.e., for frequencies equal or higher than 3 MHz. Fast imaging and optical emission spectroscopy show that the additional discharges are radio-frequency DBDs while the inter-electrode discharge is a TDBD. The RF-DBD discharge mode is attained when electrons drift becomes low enough compared to the voltage oscillation frequency to limit electron loss at the anode. To check that the additional discharges are due to a larger gas gap and a lower voltage amplitude, the TDBD/RF-DBD transition is investigated as a function of the gas gap and the applied voltage frequency and amplitude. Results show that the increase in the frequency at constant gas gap or in the gas gap at constant frequency allows to obtain RF-DBD instead of TDBD. At low frequency and large gap, the increase in the applied voltage allows RF-DBD/TDBD transition. As a consequence, an electrode configuration allowing different gap values is a solution to successively have different discharge modes with the same applied voltage.

  17. High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier.

    Science.gov (United States)

    Wang, Xiaohong; Lin, Guangqing; Li, Peng; Lv, Guoqiang; Qiu, Longzhen; Ding, Yunsheng

    2015-08-01

    1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s.

  18. Optimization of nitridation conditions for high quality inter-polysilicon dielectric layers

    NARCIS (Netherlands)

    Klootwijk, J.H.; Bergveld, H.J.; van Kranenburg, H.; Woerlee, P.H.; Wallinga, Hans

    1996-01-01

    Nitridation of deposited high temperature oxides (HTO) was studied to form high quality inter-polysilicon dielectric layers for embedded non volatile memories. Good quality dielectric layers were obtained earlier by using an optimized deposition of polysilicon and by performing a post-dielectric

  19. High-power planar dielectric waveguide lasers

    International Nuclear Information System (INIS)

    Shepherd, D.P.; Hettrick, S.J.; Li, C.; Mackenzie, J.I.; Beach, R.J.; Mitchell, S.C.; Meissner, H.E.

    2001-01-01

    The advantages and potential hazards of using a planar waveguide as the host in a high-power diode-pumped laser system are described. The techniques discussed include the use of proximity-coupled diodes, double-clad waveguides, unstable resonators, tapers, and integrated passive Q switches. Laser devices are described based on Yb 3+ -, Nd 3+ -, and Tm 3+ -doped YAG, and monolithic and highly compact waveguide lasers with outputs greater than 10 W are demonstrated. The prospects for scaling to the 100 W level and for further integration of devices for added functionality in a monolithic laser system are discussed. (author)

  20. High frequency ignition arrangement

    Energy Technology Data Exchange (ETDEWEB)

    Canup, R E

    1977-03-03

    The invention concerns an HF ignition arrangement for combustion engines with a transistor oscillator. As this oscillator requires a current of 10A, with peak currents up to about 50A, it is not sensible to take this current through the remote ignition switch for switching it on and off. According to the invention the HF high voltage transformer of the ignition is provided with a control winding, which only requires a few milliamps DC and which can therefore be switched via the ignition switch. If the ignition switch is in the 'running' position, then a premagnetising DC current flows through the control winding, which suppresses the oscillation of the oscillator which has current flowing through it, until this current is interrupted by the interruptor contacts controlled by the combustion engine, so that the oscillations of the oscillator start immediately; the oscillator only continues to oscillate during the period during which the interruptor contacts controlled by the machine are open and interrupt the premagnetisation current. The control winding is short circuited in the 'off' position of the ignition switch.

  1. Dispersion of Dielectric Permittivity in a Nanocrystalline Cellulose-Triglycine Sulfate Composite at Low and Ultralow Frequencies

    Science.gov (United States)

    Thu'o'ng, Nguyen Hoai; Sidorkin, A. S.; Milovidova, S. D.

    2018-03-01

    The dispersion of dielectric permittivity in nanocrystalline cellulose-triglycine sulfate composites is studied in the range of frequencies from 10-3 to 106 Hz, at temperatures varying from room temperature to the temperature of phase transition in this composite (54°C), in weak electric fields (1 V cm-1). Two behaviors for the dielectric dispersion are identified in the studied frequency range: at ultralow frequencies (10-3-10 Hz), the dispersion is due to Maxwell-Wagner polarization, while at higher frequencies (10-106 Hz), the dispersion is due to the movement of domain walls in the embedded triglycine sulfate crystallites. An additional peak in the temperature-dependent profiles of dielectric permittivity is detected at lower temperatures in freshly prepared samples of the considered composite; we associate it with the presence of residual water in these samples.

  2. Geographies of High Frequency Trading

    DEFF Research Database (Denmark)

    Grindsted, Thomas Skou

    2016-01-01

    This paper investigates the geographies of high frequency trading. Today shares shift hands within micro seconds, giving rise to a form of financial geographies termed algorithmic capitalism. This notion refers to the different spatio-temporalities produced by high frequency trading, under...... the valuation of time. As high frequency trading accelerates financial markets, the paper examines the spatio-temporalities of automated trading by the ways in which the speed of knowledge exploitation in financial markets is not only of interest, but also the expansion between different temporalities....... The paper demonstrates how the intensification of time-space compression produces radical new dynamics in the financial market and develops information rent in HFT as convertible to a time rent and a spatio-temporal rent. The final section discusses whether high frequency trading only responds to crises...

  3. Temperature dependence of the dielectric properties of rubber wood

    Science.gov (United States)

    Mohammed Firoz Kabir; Wan M. Daud; Kaida B. Khalid; Haji A.A. Sidek

    2001-01-01

    The effect of temperature on the dielectric properties of rubber wood was investigated in three anisotropic directions—longitudinal, radial, and tangential, and at different measurement frequencies. Low frequency measurements were conducted with a dielectric spectrometer, and high frequencies used microwave applied with open-ended coaxial probe sensors. Dielectric...

  4. Dielectric-Lined High-Gradient Accelerator Structure

    Energy Technology Data Exchange (ETDEWEB)

    Jay L. Hirshfield

    2012-04-24

    Rectangular particle accelerator structures with internal planar dielectric elements have been studied, with a view towards devising structures with lower surface fields for a given accelerating field, as compared with structures without dielectrics. Success with this concept is expected to allow operation at higher accelerating gradients than otherwise on account of reduced breakdown probabilities. The project involves studies of RF breakdown on amorphous dielectrics in test cavities that could enable high-gradient structures to be built for a future multi-TeV collider. The aim is to determine what the limits are for RF fields at the surfaces of selected dielectrics, and the resulting acceleration gradient that could be achieved in a working structure. The dielectric of principal interest in this study is artificial CVD diamond, on account of its advertised high breakdown field ({approx}2 GV/m for dc), low loss tangent, and high thermal conductivity. Experimental studies at mm-wavelengths on materials and structures for achieving high acceleration gradient were based on the availability of the 34.3 GHz third-harmonic magnicon amplifier developed by Omega-P, and installed at the Yale University Beam Physics Laboratory. Peak power from the magnicon was measured to be about 20 MW in 0.5 {micro}s pulses, with a gain of 54 dB. Experiments for studying RF high-field effects on CVD diamond samples failed to show any evidence after more than 10{sup 5} RF pulses of RF breakdown up to a tangential surface field strength of 153 MV/m; studies at higher fields were not possible due to a degradation in magnicon performance. A rebuild of the tube is underway at this writing. Computed performance for a dielectric-loaded rectangular accelerator structure (DLA) shows highly competitive properties, as compared with an existing all-metal structure. For example, comparisons were made of a DLA structure having two planar CVD diamond elements with a all-metal CERN structure HDS

  5. Dielectric-Lined High-Gradient Accelerator Structure

    International Nuclear Information System (INIS)

    Hirshfield, Jay L.

    2012-01-01

    Rectangular particle accelerator structures with internal planar dielectric elements have been studied, with a view towards devising structures with lower surface fields for a given accelerating field, as compared with structures without dielectrics. Success with this concept is expected to allow operation at higher accelerating gradients than otherwise on account of reduced breakdown probabilities. The project involves studies of RF breakdown on amorphous dielectrics in test cavities that could enable high-gradient structures to be built for a future multi-TeV collider. The aim is to determine what the limits are for RF fields at the surfaces of selected dielectrics, and the resulting acceleration gradient that could be achieved in a working structure. The dielectric of principal interest in this study is artificial CVD diamond, on account of its advertised high breakdown field (∼2 GV/m for dc), low loss tangent, and high thermal conductivity. Experimental studies at mm-wavelengths on materials and structures for achieving high acceleration gradient were based on the availability of the 34.3 GHz third-harmonic magnicon amplifier developed by Omega-P, and installed at the Yale University Beam Physics Laboratory. Peak power from the magnicon was measured to be about 20 MW in 0.5 (micro)s pulses, with a gain of 54 dB. Experiments for studying RF high-field effects on CVD diamond samples failed to show any evidence after more than 10 5 RF pulses of RF breakdown up to a tangential surface field strength of 153 MV/m; studies at higher fields were not possible due to a degradation in magnicon performance. A rebuild of the tube is underway at this writing. Computed performance for a dielectric-loaded rectangular accelerator structure (DLA) shows highly competitive properties, as compared with an existing all-metal structure. For example, comparisons were made of a DLA structure having two planar CVD diamond elements with a all-metal CERN structure HDS operating at 30

  6. Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

    Science.gov (United States)

    Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

    2013-10-18

    Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The

  7. Low Frequency Dispersion Mechanism of Dielectric Response for Oil-paper Insulation Diagnosis

    Institute of Scientific and Technical Information of China (English)

    ZHOU Lijun; LI Xianlang; WU Guangning

    2013-01-01

    Both the real part and imaginary part of complex permittivity approximately have a log-linear frequency dependency at low frequencies,especially at ultra-low frequencies under conditions of different moisture concentrations and temperatures,which is recognized as the low frequency dispersion (LFD).In order to explain this dispersion,a new mechanism of dielectric response of LFD of oil-paper insulation is proposed.A simplified one-dimensional mathematical model of concentration polarization carrier caused by slow migration is developed and solved,which indicates that ion mobility is closely related to the size of gap and the adsorption capacity of cellulose molecular chains to ions.A stochastic statistical model of the carrier mobility induced LFD is also developed.Moreover,actual tests under 50 ℃and 2% moisture content were put forward,as well as simulations with according current waveforms.The simulation results agreed well with the experimental data in that concentration polarization of carriers caused by slow migration is the probable cause of low frequency dispersion ofdielectric response for oil-paper insulation diagnosis.

  8. Investigation of Combined High-Frequency and Arc Discharges

    International Nuclear Information System (INIS)

    Taran, V.S.; Nezovibatko, Yu.N.; Marinin, V.G.; Shvets, O.M.; Ridozub, V.N.; Gasilin, V.V.

    2001-01-01

    In this paper we analyze experiment with arc and high-frequency (HF) plasma sources carried out in modified devise of the ''Bulat'' type. The HF-sources and combined discharges have attracted considerable attention for surface cleaning and coating. The utilization of such discharges allows decreasing droplet fraction formation and providing better adhesion and microhardness values. The existence of HF-field in plasma allows obtaining either conductive or dielectric coatings and they can be deposited on any substrates. (author)

  9. Polymethyl methacrylate (PMMA)-bismuth ferrite (BFO) nanocomposite: low loss and high dielectric constant materials with perceptible magnetic properties.

    Science.gov (United States)

    Tamboli, Mohaseen S; Palei, Prakash K; Patil, Santosh S; Kulkarni, Milind V; Maldar, Noormahmad N; Kale, Bharat B

    2014-09-21

    Herein, poly(methyl methacrylate)-bismuth ferrite (PMMA-BFO) nanocomposites were successfully prepared by an in situ polymerization method for the first time. Initially, the as prepared bismuth ferrite (BFO) nanoparticles were dispersed in the monomer, (methyl methacrylate) by sonication. Benzoyl peroxide was used to initiate the polymerization reaction in ethyl acetate medium. The nanocomposite films were subjected to X-ray diffraction analysis (XRD), (1)H NMR, field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), thermogravimetric analysis (TGA), infrared spectroscopy (IR), dielectric and magnetic characterizations. The dielectric measurement of the nanocomposites was investigated at a frequency range of 10 Hz to 1 MHz. It was found that the nanocomposites not only showed a significantly increased value of the dielectric constant with an increase in the loading percentage of BFO as compared to pure PMMA, but also exhibited low dielectric loss values over a wide range of frequencies. The values of the dielectric constant and dielectric loss of the PMMA-BFO5 (5% BFO loading) sample at 1 kHz frequency was found be ~14 and 0.037. The variation of the ferromagnetic response of the nanocomposite was consistent with the varying volume percentage of the nanoparticles. The remnant magnetization (Mr) and saturation magnetization (Ms) values of the composites were found to be enhanced by increasing the loading percentage of BFO. The value of Ms for PMMA-BFO5 was found to be ~6 emu g(-1). The prima facie observations suggest that the nanocomposite is a potential candidate for application in high dielectric constant capacitors. Significantly, based on its magnetic properties the composite will also be useful for use in hard disk components.

  10. Streamer discharge inception in a sub-breakdown electric field from a dielectric body with a frequency dependent dielectric permittivity

    NARCIS (Netherlands)

    A. A. Dubinova (Anna); C. Rutjes (Casper); U. M. Ebert (Ute)

    2015-01-01

    htmlabstractWe study positive streamer inception from the tip of an elongated ice particle. The dielectric permittivity of ice drops from 93 to 3 for electric fields changing on the millisecond timescale [1]. We demonstrate that this effect can be important on the nanosecond time scale of

  11. From surface to volume plasmons in hyperbolic metamaterials: General existence conditions for bulk high-k waves in metal-dielectric and graphene-dielectric multilayers

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Andryieuski, Andrei; Sipe, John E.

    2014-01-01

    -dielectric and recently introduced graphene-dielectric stacks. We confirm that short-range surface plasmons in thin metal layers can give rise to hyperbolic metamaterial properties and demonstrate that long-range surface plasmons cannot. We also show that graphene-dielectric multilayers tend to support high- k waves...

  12. Low frequency complex dielectric (conductivity) response of dilute clay suspensions: Modeling and experiments.

    Science.gov (United States)

    Hou, Chang-Yu; Feng, Ling; Seleznev, Nikita; Freed, Denise E

    2018-04-11

    In this work, we establish an effective medium model to describe the low-frequency complex dielectric (conductivity) dispersion of dilute clay suspensions. We use previously obtained low-frequency polarization coefficients for a charged oblate spheroidal particle immersed in an electrolyte as the building block for the Maxwell Garnett mixing formula to model the dilute clay suspension. The complex conductivity phase dispersion exhibits a near-resonance peak when the clay grains have a narrow size distribution. The peak frequency is associated with the size distribution as well as the shape of clay grains and is often referred to as the characteristic frequency. In contrast, if the size of the clay grains has a broad distribution, the phase peak is broadened and can disappear into the background of the canonical phase response of the brine. To benchmark our model, the low-frequency dispersion of the complex conductivity of dilute clay suspensions is measured using a four-point impedance measurement, which can be reliably calibrated in the frequency range between 0.1 Hz and 10 kHz. By using a minimal number of fitting parameters when reliable information is available as input for the model and carefully examining the issue of potential over-fitting, we found that our model can be used to fit the measured dispersion of the complex conductivity with reasonable parameters. The good match between the modeled and experimental complex conductivity dispersion allows us to argue that our simplified model captures the essential physics for describing the low-frequency dispersion of the complex conductivity of dilute clay suspensions. Copyright © 2018 Elsevier Inc. All rights reserved.

  13. Fabrication of Composite Filaments with High Dielectric Permittivity for Fused Deposition 3D Printing.

    Science.gov (United States)

    Wu, Yingwei; Isakov, Dmitry; Grant, Patrick S

    2017-10-23

    Additive manufacturing of complex structures with spatially varying electromagnetic properties can enable new applications in high-technology sectors such as communications and sensors. This work presents the fabrication method as well as microstructural and dielectric characterization of bespoke composite filaments for fused deposition modeling (FDM) 3D printing of microwave devices with a high relative dielectric permittivity ϵ = 11 in the GHz frequency range. The filament is composed of 32 vol % of ferroelectric barium titanate (BaTiO 3 ) micro-particles in a polymeric acrylonitrile butadiene styrene (ABS) matrix. An ionic organic ester surfactant was added during formulation to enhance the compatibility between the polymer and the BaTiO 3 . To promote reproducible and robust printability of the fabricated filament, and to promote plasticity, dibutyl phthalate was additionally used. The combined effect of 1 wt % surfactant and 5 wt % plasticizer resulted in a uniform, many hundreds of meters, continuous filament of commercial quality capable of many hours of uninterrupted 3D printing. We demonstrate the feasibility of using the high dielectric constant filament for 3D printing through the fabrication of a range of optical devices. The approach herein may be used as a guide for the successful fabrication of many types of composite filament with varying functions for a broad range of applications.

  14. Fabrication of Composite Filaments with High Dielectric Permittivity for Fused Deposition 3D Printing

    Directory of Open Access Journals (Sweden)

    Yingwei Wu

    2017-10-01

    Full Text Available Additive manufacturing of complex structures with spatially varying electromagnetic properties can enable new applications in high-technology sectors such as communications and sensors. This work presents the fabrication method as well as microstructural and dielectric characterization of bespoke composite filaments for fused deposition modeling (FDM 3D printing of microwave devices with a high relative dielectric permittivity ϵ = 11 in the GHz frequency range. The filament is composed of 32 vol % of ferroelectric barium titanate (BaTiO 3 micro-particles in a polymeric acrylonitrile butadiene styrene (ABS matrix. An ionic organic ester surfactant was added during formulation to enhance the compatibility between the polymer and the BaTiO 3 . To promote reproducible and robust printability of the fabricated filament, and to promote plasticity, dibutyl phthalate was additionally used. The combined effect of 1 wt % surfactant and 5 wt % plasticizer resulted in a uniform, many hundreds of meters, continuous filament of commercial quality capable of many hours of uninterrupted 3D printing. We demonstrate the feasibility of using the high dielectric constant filament for 3D printing through the fabrication of a range of optical devices. The approach herein may be used as a guide for the successful fabrication of many types of composite filament with varying functions for a broad range of applications.

  15. High-frequency Trader Subjectivity

    DEFF Research Database (Denmark)

    Borch, Christian; Lange, Ann-Christina

    2017-01-01

    In this article, we examine the recent shift in financial markets toward high-frequency trading (HFT). This turn is being legitimized with reference to how algorithms are allegedly more rational and efficient than human traders, and less prone to emotionally motivated decisions. We argue......-techniques of the ideal high-frequency trader. We demonstrate that these traders face the challenge of avoiding emotional interference in their algorithms and that they deploy a set of disciplinary self-techniques to curb the importance of emotional attachment....

  16. High-efficiency water-loaded microwave antenna in ultra-high-frequency band

    Science.gov (United States)

    Gong, Zilun; Bartone, Chris; Yang, Fuyi; Yao, Jie

    2018-03-01

    High-index dielectrics are widely used in microwave antennas to control the radiation characteristics. Liquid water, with a high dielectric index at microwave frequency, is an interesting material to achieving tunable functionalities. Here, we demonstrate a water-loaded microwave antenna system that has high loss-tolerance and wideband tunability enabled by fluidity. Our simulation and experimental results show that the resonance frequency can be effectively tuned by the size of loading water. Furthermore, the antenna systems with water loading can achieve high radiation efficiency (>90%) in the ultra-high-frequency (0.3-3 GHz) band. This work brings about opportunities in realistic tunable microwave antenna designs enabled by liquid.

  17. High-pressure cell for simultaneous dielectric and neutron spectroscopy

    Science.gov (United States)

    Sanz, Alejandro; Hansen, Henriette Wase; Jakobsen, Bo; Pedersen, Ib H.; Capaccioli, Simone; Adrjanowicz, Karolina; Paluch, Marian; Gonthier, Julien; Frick, Bernhard; Lelièvre-Berna, Eddy; Peters, Judith; Niss, Kristine

    2018-02-01

    In this article, we report on the design, manufacture, and testing of a high-pressure cell for simultaneous dielectric and neutron spectroscopy. This cell is a unique tool for studying dynamics on different time scales, from kilo- to picoseconds, covering universal features such as the α relaxation and fast vibrations at the same time. The cell, constructed in cylindrical geometry, is made of a high-strength aluminum alloy and operates up to 500 MPa in a temperature range between roughly 2 and 320 K. In order to measure the scattered neutron intensity and the sample capacitance simultaneously, a cylindrical capacitor is positioned within the bore of the high-pressure container. The capacitor consists of two concentric electrodes separated by insulating spacers. The performance of this setup has been successfully verified by collecting simultaneous dielectric and neutron spectroscopy data on dipropylene glycol, using both backscattering and time-of-flight instruments. We have carried out the experiments at different combinations of temperature and pressure in both the supercooled liquid and glassy state.

  18. Low frequency phase signal measurement with high frequency squeezing

    OpenAIRE

    Zhai, Zehui; Gao, Jiangrui

    2011-01-01

    We calculate the utility of high-frequency squeezed-state enhanced two-frequency interferometry for low-frequency phase measurement. To use the high-frequency sidebands of the squeezed light, a two-frequency intense laser is used in the interferometry instead of a single-frequency laser as usual. We find that the readout signal can be contaminated by the high-frequency phase vibration, but this is easy to check and avoid. A proof-of-principle experiment is in the reach of modern quantum optic...

  19. Race for novel high-index all-dielectric and hybrid metal-dielectric nanophotonic materials: Pit-stop optical tests

    Science.gov (United States)

    Kudryashov, S. I.; Saraeva, I. N.; Ivanova, A. K.; Kudryavtseva, A. D.; Tchiernega, N. V.; Ionin, A. A.; Kuchmizhak, A. A.; Zayarny, D. A.

    2017-09-01

    Magnetic dipolar Mie-resonance of nanodiamonds supports their highly-efficient stimulated low-frequency Raman scattering via nanosecond laser excitation of their fundamental breathing mode, with strong additional plasmonic enhancement of the Raman conversion efficiency upon ablative capping of the resonant nanodiamond core by a silver nanoshell with a broad overlapping electrical dipolar Mie-resonance. Also, crystalline selenium nanoparticles, exhibiting the high refractive index in the visible/near-IR ranges, were demonstrated as promising all-dielectric sensing building nanoblocks in nanophotonics.

  20. High Gain and High Directive of Antenna Arrays Utilizing Dielectric Layer on Bismuth Titanate Ceramics

    Directory of Open Access Journals (Sweden)

    F. H. Wee

    2012-01-01

    Full Text Available A high gain and high directive microstrip patch array antenna formed from dielectric layer stacked on bismuth titanate (BiT ceramics have been investigated, fabricated, and measured. The antennas are designed and constructed with a combination of two-, four-, and six-BiT elements in an array form application on microwave substrate. For gain and directivity enhancement, a layer of dielectric was stacked on the BiT antenna array. We measured the gain and directivity of BiT array antennas with and without the dielectric layer and found that the gain of BiT array antenna with the dielectric layer was enhanced by about 1.4 dBi of directivity and 1.3 dB of gain over the one without the dielectric layer at 2.3 GHz. The impedance bandwidth of the BiT array antenna both with and without the dielectric layer is about 500 MHz and 350 MHz, respectively, which is suitable for the application of the WiMAX 2.3 GHz system. The utilization of BiT ceramics that covers about 90% of antenna led to high radiation efficiency, and small-size antennas were produced. In order to validate the proposed design, theoretical and measured results are provided and discussed.

  1. A high energy density relaxor antiferroelectric pulsed capacitor dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Hwan Ryul; Lynch, Christopher S. [Department of Mechanical and Aerospace Engineering, University of California, Los Angeles (UCLA), Los Angeles, California 90095 (United States)

    2016-01-14

    Pulsed capacitors require high energy density and low loss, properties that can be realized through selection of composition. Ceramic (Pb{sub 0.88}La{sub 0.08})(Zr{sub 0.91}Ti{sub 0.09})O{sub 3} was found to be an ideal candidate. La{sup 3+} doping and excess PbO were used to produce relaxor antiferroelectric behavior with slim and slanted hysteresis loops to reduce the dielectric hysteresis loss, to increase the dielectric strength, and to increase the discharge energy density. The discharge energy density of this composition was found to be 3.04 J/cm{sup 3} with applied electric field of 170 kV/cm, and the energy efficiency, defined as the ratio of the discharge energy density to the charging energy density, was 0.920. This high efficiency reduces the heat generated under cyclic loading and improves the reliability. The properties were observed to degrade some with temperature increase above 80 °C. Repeated electric field cycles up to 10 000 cycles were applied to the specimen with no observed performance degradation.

  2. Investigation of dielectric behavior of the PVC/BaTiO3 composite in low-frequencies

    Science.gov (United States)

    Berrag, A.; Belkhiat, S.; Madani, L.

    2018-04-01

    Polyvinyl chloride (PVC) is widely used as insulator in electrical engineering especially as cable insulation sheaths. In order to improve the dielectric properties, polymers are mixed with ceramics. In this paper, PVC composites with different weight percentages 2 wt.%, 5 wt.%, 8 wt.% and 10 wt.% were prepared and investigated. Loss index (𝜀″) and dielectric constant (𝜀‧) have been measured using an impedance analyzer RLC. Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM) equipped with energy dispersive X-ray (EDX) have been used as characterization techniques. The incorporation of BaTiO3 does not modify the crystallinity and the morphology of the PVC but reduces the space charges, therefore the dielectric losses. The frequency response analysis has been followed in the frequency ranges (20-140 Hz and 115-1 MHz). Relaxation frequencies have been evaluated in each frequency range. Experimental measurements have been validated using Cole-Cole’s model. Experimental results show well that BaTiO3 as a filler improves the dielectric properties of PVC.

  3. High-voltage pulsed life of multistressed polypropylene capacitor dielectric

    International Nuclear Information System (INIS)

    Laghari, J.R.

    1992-01-01

    High-voltage polypropylene capacitors were aged under singular as well as simultaneous multiple stresses (electrical, thermal, and radiation) at the University of Buffalo's 2 MW thermal nuclear reactor. These stresses were combined neutron-gamma radiation with a total dose of 1.6 x 10 6 rad, electrical stress at 40 V rms /μm, and thermal stress at 90 degrees C. After exposure, the polypropylene dielectric was tested for life (number of pulses to fail) under high-voltage high-repetition-rate (100 pps) pulses. Pulsed life data were also compared with ac life data. Results show that radiation stress causes the most degradation in life, either acting alone or in combination with other stresses. The largest reduction in life occurs when polypropylene is aged under simultaneous multiple stresses (electrical, thermal, and radiation). In this paper, it is shown that pulsed life can be equivalently compared with ac life

  4. High-cycle electromechanical aging of dielectric elastomer actuators with carbon-based electrodes

    Science.gov (United States)

    de Saint-Aubin, C. A.; Rosset, S.; Schlatter, S.; Shea, H.

    2018-07-01

    We present high-cycle aging tests of dielectric elastomer actuators (DEAs) based on silicone elastomers, reporting on the time-evolution of actuation strain and of electrode resistance over millions of cycles. We compare several types of carbon-based electrodes, and for the first time show how the choice of electrode has a dramatic influence on DEA aging. An expanding circle DEA configuration is used, consisting of a commercial silicone membrane with the following electrodes: commercial carbon grease applied manually, solvent-diluted carbon grease applied by stamping (pad printing), loose carbon black powder applied manually, carbon black powder suspension applied by inkjet-printing, and conductive silicone-carbon composite applied by stamping. The silicone-based DEAs with manually applied carbon grease electrodes show the shortest lifetime of less than 105 cycles at 5% strain, while the inkjet-printed carbon powder and the stamped silicone-carbon composite make for the most reliable devices, with lifetimes greater than 107 cycles at 5% strain. These results are valid for the specific dielectric and electrode configurations that were tested: using other dielectrics or electrode formulations would lead to different lifetimes and failure modes. We find that aging (as seen in the change in resistance and in actuation strain versus cycle number) is independent of the actuation frequency from 10 Hz to 200 Hz, and depends on the total accumulated time the DEA spends in an actuated state.

  5. Experimental Study on High Electrical Breakdown of Water Dielectric

    International Nuclear Information System (INIS)

    Zhang Zicheng; Zhang Jiande; Yang Jianhua

    2005-01-01

    By means of a coaxial apparatus, pressurized water breakdown experiments with microsecond charging have been carried out with different surface roughness of electrodes and different ethylene glycol concentrations of ethylene glycol/water mixture. The experimental results about the breakdown stress and the effective time are presented. The breakdown stress is normalized to the situation that the effective time is transformed to 1 μs and analyzed. The conclusions are as follows: (1) the breakdown stress formula is modified to E = 0.561M A -1/10 t eff -1/N P 1/8 ; (2) the coefficient M is significantly increased by surface polishing and ethylene glycol additive; (3) it is accumulative for the capacity of improving electrical breakdown strength for surface polishing, ethylene glycol additive, and pressurization, of which pressurization is the most effective method; (4) the highest stress of 235.5 kV/cm is observed in ethylene glycol/water mixture with an ethylene glycol concentration of 80% at a hydrostatic pressure of 1215.9 kPa and is about one time greater than that in pure water at constant pressure; (5) for pressurization and surface polishing, the primary mechanism to improve the breakdown strength of water dielectric is the increase in the breakdown time delay. Research results indicate great potential in the application of the high power pulse conditioning system of water dielectric

  6. Electrical Capacitance Volume Tomography with High-Contrast Dielectrics

    Science.gov (United States)

    Nurge, Mark

    2010-01-01

    The Electrical Capacitance Volume Tomography (ECVT) system has been designed to complement the tools created to sense the presence of water in nonconductive spacecraft materials, by helping to not only find the approximate location of moisture but also its quantity and depth. The ECVT system has been created for use with a new image reconstruction algorithm capable of imaging high-contrast dielectric distributions. Rather than relying solely on mutual capacitance readings as is done in traditional electrical capacitance tomography applications, this method reconstructs high-resolution images using only the self-capacitance measurements. The image reconstruction method assumes that the material under inspection consists of a binary dielectric distribution, with either a high relative dielectric value representing the water or a low dielectric value for the background material. By constraining the unknown dielectric material to one of two values, the inverse math problem that must be solved to generate the image is no longer ill-determined. The image resolution becomes limited only by the accuracy and resolution of the measurement circuitry. Images were reconstructed using this method with both synthetic and real data acquired using an aluminum structure inserted at different positions within the sensing region. The cuboid geometry of the system has two parallel planes of 16 conductors arranged in a 4 4 pattern. The electrode geometry consists of parallel planes of copper conductors, connected through custom-built switch electronics, to a commercially available capacitance to digital converter. The figure shows two 4 4 arrays of electrodes milled from square sections of copper-clad circuit-board material and mounted on two pieces of glass-filled plastic backing, which were cut to approximately square shapes, 10 cm on a side. Each electrode is placed on 2.0-cm centers. The parallel arrays were mounted with the electrode arrays approximately 3 cm apart. The open ends

  7. THE RELATION OF FREQUENCY TO THE PHYSIOLOGICAL EFFECTS OF ULTRA-HIGH FREQUENCY CURRENTS.

    Science.gov (United States)

    Christie, R V; Loomis, A L

    1929-01-31

    1. Biological effects of electromagnetic waves emitted by a vacuum tube oscillator have been studied at frequencis ranging from 8,300,000 to 158,000,000 cycles per second (1.9 to 38 meters wave-length). 2. The effects produced on animals can be fully explained on the basis of the heat generated by high frequency currents which are induced in them. 3. No evidence was obtained to support the theory that certain wave-lengths have a specific action on living cells. 4. At frequencies below 50,000,000 cycles, the effect of these radiations on animals is proportionate to the intensity of the electro-magnetic field. As the frequency is increased beyond this point, the amount of induced current is diminished and the apparent lethality of the radiation is decreased. This can be explained by changes occurring in the dielectric properties of tissues at low wave-lengths.

  8. The dielectric calibration of capacitance probes for soil hydrology using an oscillation frequency response model

    Directory of Open Access Journals (Sweden)

    D. A. Robinson

    1998-01-01

    Full Text Available Capacitance probes are a fast, safe and relatively inexpensive means of measuring the relative permittivity of soils, which can then be used to estimate soil water content. Initial experiments with capacitance probes used empirical calibrations between the frequency response of the instrument and soil water content. This has the disadvantage that the calibrations are instrument-dependent. A twofold calibration strategy is described in this paper; the instrument frequency is turned into relative permittivity (dielectric constant which can then be calibrated against soil water content. This approach offers the advantages of making the second calibration, from soil permittivity to soil water content. instrument-independent and allows comparison with other dielectric methods, such as time domain reflectometry. A physically based model, used to calibrate capacitance probes in terms of relative permittivity (εr is presented. The model, which was developed from circuit analysis, predicts, successfully, the frequency response of the instrument in liquids with different relative permittivities, using only measurements in air and water. lt was used successfully to calibrate 10 prototype surface capacitance insertion probes (SCIPS and a depth capacitance probe. The findings demonstrate that the geometric properties of the instrument electrodes were an important parameter in the model, the value of which could be fixed through measurement. The relationship between apparent soil permittivity and volumetric water content has been the subject of much research in the last 30 years. Two lines of investigation have developed, time domain reflectometry (TDR and capacitance. Both methods claim to measure relative permittivity and should therefore be comparable. This paper demonstrates that the IH capacitance probe overestimates relative permittivity as the ionic conductivity of the medium increases. Electrically conducting ionic solutions were used to test the

  9. High-frequency, high-intensity photoionization

    Science.gov (United States)

    Reiss, H. R.

    1996-02-01

    Two analytical methods for computing ionization by high-frequency fields are compared. Predicted ionization rates compare well, but energy predictions for the onset of ionization differ radically. The difference is shown to arise from the use of a transformation in one of the methods that alters the zero from which energy is measured. This alteration leads to an apparent energy threshold for ionization that can, especially in the stabilization regime, differ strongly from the laboratory measurement. It is concluded that channel closings in intense-field ionization can occur at high as well as low frequencies. It is also found that the stabilization phenomenon at high frequencies, very prominent for hydrogen, is absent in a short-range potential.

  10. High-Frequency Seafloor Acoustics

    CERN Document Server

    Jackson, Darrell R

    2007-01-01

    High-Frequency Seafloor Acoustics is the first book in a new series sponsored by the Office of Naval Research on the latest research in underwater acoustics. This exciting new title provides ready access to experimental data, theory, and models relevant to high-frequency seafloor acoustics and will be of interest to sonar engineers and researchers working in underwater acoustics. The physical characteristics of the seafloor affecting acoustic propagation and scattering are covered, including physical and geoacoustic properties and surface roughness. Current theories for acoustic propagation in sediments are presented along with corresponding models for reflection, scattering, and seafloor penetration. The main text is backed up by an extensive bibliography and technical appendices.

  11. Investigation of dielectric relaxation in systems with hierarchical organization: From time to frequency domain and back again

    Energy Technology Data Exchange (ETDEWEB)

    Yokoi, Koki [Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, WI (United States); Raicu, Valerică, E-mail: vraicu@uwm.edu [Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, WI (United States); Department of Biological Sciences, University of Wisconsin-Milwaukee, Milwaukee, WI (United States)

    2017-06-28

    Relaxation in fractal structures was investigated theoretically starting from a simple model of a Cantorian tree and kinetic equations linking the change in the number of particles (e.g., electrical charges) populating each branch of the tree and their transfer to other branches or to the ground state. We numerically solved the system of differential equations obtained and determined the so-called cumulative distribution function of particles, which, in dielectric or mechanical relaxation parlance, is the same as the relaxation function of the system. As a physical application, we studied the relationship between the dielectric relaxation in time-domain and the dielectric dispersion in the frequency-domain. Upon choosing appropriate rate constants, our model described accurately well-known non-exponential and non-Debye time- and frequency-domain functions, such as stretched exponentials, Havrilliak–Negami, and frequency power law. Our approach opens the door to applying kinetic models to describe a wide array of relaxation processes, which traditionally have posed great challenges to theoretical modeling based on first principles. - Highlights: • Relaxation was investigated for a system of particles flowing through a Cantorian tree. • A set of kinetic equations was formulated and used to compute the relaxation function of the system. • The dispersion function of the system was computed from the relaxation function. • An analytical method was used to recover the original relaxation function from the dispersion function. • This formalism was used to study dielectric relaxation and dispersion in fractal structures.

  12. Identification of structural relaxation in the dielectric response of water

    DEFF Research Database (Denmark)

    Hansen, Jesper Schmidt; Kisliuk, Alexander; Solokov, Alexei P.

    2016-01-01

    One century ago pioneering dielectric results obtained for water and n-alcohols triggered the advent of molecular rotation diffusion theory considered by Debye to describe the primary dielectric absorption in these liquids. Comparing dielectric, viscoelastic, and light scattering results, we...... unambiguously demonstrate that the structural relaxation appears only as a high-frequency shoulder in the dielectric spectra of water. In contrast, the main dielectric peak is related to a supramolecular structure, analogous to the Debye-like peak observed in monoalcohols....

  13. Experimental Characterization of Dielectric Properties in Fluid Saturated Artificial Shales

    OpenAIRE

    Beloborodov, Roman; Pervukhina, Marina; Han, Tongcheng; Josh, Matthew

    2017-01-01

    High dielectric contrast between water and hydrocarbons provides a useful method for distinguishing between producible layers of reservoir rocks and surrounding media. Dielectric response at high frequencies is related to the moisture content of rocks. Correlations between the dielectric permittivity and specific surface area can be used for the estimation of elastic and geomechanical properties of rocks. Knowledge of dielectric loss-factor and relaxation frequency in shales is critical for t...

  14. Dielectric elastomers with novel highly-conducting electrodes

    Science.gov (United States)

    Böse, Holger; Uhl, Detlev

    2013-04-01

    Beside the characteristics of the elastomer material itself, the performance of dielectric elastomers in actuator, sensor as well as generator applications depends also on the properties of the electrode material. Various electrode materials based on metallic particles dispersed in a silicone matrix were manufactured and investigated. Anisotropic particles such as silver-coated copper flakes and silver-coated glass flakes were used for the preparation of the electrodes. The concentration of the metallic particles and the thickness of the electrode layers were varied. Specific conductivities derived from resistance measurements reached about 100 S/cm and surmount those of the reference materials based on graphite and carbon black by up to three orders of magnitude. The high conductivities of the new electrode materials can be maintained even at very large stretch deformations up to 200 %.

  15. Dielectric properties of porcine cerebrospinal tissues at microwave frequencies: in vivo, in vitro and systematic variation with age

    International Nuclear Information System (INIS)

    Peyman, A; Holden, S J; Watts, S; Perrott, R; Gabriel, C

    2007-01-01

    The dielectric properties of pig cerebrospinal tissues were measured in vivo and in vitro, in the frequency range of 50 MHz-20 GHz. The total combined measurement uncertainty was calculated at each frequency point and is reported over representative frequency regions. Comparisons were made for each tissue between the two sets of data and with the literature of the past decade. The in vitro study was extended to include tissue from pigs weighing approximately 10, 50 and 250 kg to re-visit the question of the variation of dielectric properties with age. White matter and spinal chord showed significant variation as function of animal age, no age-related variations were recorded for grey matter

  16. Evaluation of the high-voltage high-frequency transformer insulating materials for satellites

    International Nuclear Information System (INIS)

    Kurita, Hiroshi; Hasegawa, Taketoshi; Hirasawa, Eiichi; Gonai, Toshio; Ohsuga, Hiroyuki.

    1987-01-01

    Environment resistance evaluation was made of the insulating materials of impregnated injection type for high-voltage high-frequency transformers mounted in satellites. (1) The stress occurring in the impregnated injection type resin is small in silicon resin and urethane resin and large in epoxy resin. (2) The dielectric characteristic at high frequency is good in silicone resin. In epoxy resin, when the transformer is operated at high temperature, its thermal runaway may take place. (3) The radiation deterioration at 1 Mrad - 10 Mrad is slight in urethane resin. (4) The degassing is not good in silicone resin. (5) The adhesive power is good in urethane resin. (6) From the above results, in silicone resin there is problem in degassing and adhesive power. In epoxy resin there is problem in stress and dielectric characteristic. (Mori, K.)

  17. High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; You, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino, E-mail: rino.choi@inha.ac.kr

    2015-08-31

    This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 °C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm{sup 2}/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. - Highlights: • We develop a low temperature inorganic dielectric deposition process. • We fabricate oxide semiconductor channel devices using all-solution processes. • Same solvent is used for dielectric and oxide semiconductor deposition.

  18. High-frequency magnetic components

    CERN Document Server

    Kazimierczuk, Marian K

    2013-01-01

    A unique text on the theory and design fundaments of inductors and transformers, updated with more coverage on the optimization of magnetic devices and many new design examples The first edition is popular among a very broad audience of readers in different areas of engineering and science. This book covers the theory and design techniques of the major types of high-frequency power inductors and transformers for a variety of applications, including switching-mode power supplies (SMPS) and resonant dc-to-ac power inverters and dc-to-dc power converters. It describes eddy-current phenomena (su

  19. Determination of plasma frequency, damping constant, and size distribution from the complex dielectric function of noble metal nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza Herrera, Luis J.; Arboleda, David Muñetón [Centro de Investigaciones Ópticas (CIOp), (CONICET La Plata-CIC) (Argentina); Schinca, Daniel C.; Scaffardi, Lucía B., E-mail: lucias@ciop.unlp.edu.ar [Centro de Investigaciones Ópticas (CIOp), (CONICET La Plata-CIC) (Argentina); Departamento de Ciencias Básicas, Facultad de Ingeniería, UNLP (Argentina)

    2014-12-21

    This paper develops a novel method for simultaneously determining the plasma frequency ω{sub P}   and the damping constant γ{sub free} in the bulk damped oscillator Drude model, based on experimentally measured real and imaginary parts of the metal refractive index in the IR wavelength range, lifting the usual approximation that restricts frequency values to the UV-deep UV region. Our method was applied to gold, silver, and copper, improving the relative uncertainties in the final values for ω{sub p} (0.5%–1.6%) and for γ{sub free} (3%–8%), which are smaller than those reported in the literature. These small uncertainties in ω{sub p} and γ{sub free} determination yield a much better fit of the experimental complex dielectric function. For the case of nanoparticles (Nps), a series expansion of the Drude expression (which includes ω{sub p} and γ{sub free} determined using our method) enables size-dependent dielectric function to be written as the sum of three terms: the experimental bulk dielectric function plus two size corrective terms, one for free electron, and the other for bound-electron contributions. Finally, size distribution of nanometric and subnanometric gold Nps in colloidal suspension was determined through fitting its experimental optical extinction spectrum using Mie theory based on the previously determined dielectric function. Results are compared with size histogram obtained from Transmission Electron Microscopy (TEM)

  20. Electrical and optical characteristics of the radio frequency surface dielectric barrier discharge plasma actuation

    International Nuclear Information System (INIS)

    Wang Wei-Long; Song Hui-Min; Li Jun; Jia Min; Wu Yun; Jin Di

    2016-01-01

    Electrical characteristics and optical emission spectrum of the radio frequency (RF) surface dielectric barrier discharge (SDBD) plasma actuation are investigated experimentally in this paper. Influences of operating pressure, duty cycle and load power on the discharge are analyzed. When the operating pressure reaches 30 kPa, the discharge energy calculated from the Charge–Voltage (Q–V) Lissajous figure increases significantly, while the effective capacitance decreases remarkably. As the duty cycle of the applied voltage increases, the voltage–current waveforms, the area of Q–V loop and the capacity show no distinct changes. Below 40 W, effective capacitance increases with the increase of load power, but it almost remains unchanged when load power is between 40 W and 95 W. The relative intensity changes little as the operating pressure varies from 4 kPa to 100 kPa, while it rises evidently with the pressure below 4 kPa, which indicates that the RF discharge mode shifts from filamentary discharge to glow discharge at around 4 kPa. With the increase of load power, the relative intensity rises evidently. Additionally, the relative intensity is insensitive to the pressure, the duty cycle, and the load power. (paper)

  1. A new design of dielectric elastomer membrane resonator with tunable resonant frequencies and mode shapes

    Science.gov (United States)

    Li, Yunlong; Oh, Inkyu; Chen, Jiehao; Hu, Yuhang

    2018-06-01

    Conventional membrane resonators are bulky, and once the geometries and materials are fixed in the fabricated device, the resonators’ characteristics are fixed. In this work, we introduce the active membrane, dielectric elastomer (DE), into the resonator design. Attaching a stiffer passive membrane onto the active DE membrane forms a two-layer system, which generates an out-of-plane deformation when the DE is actuated through a DC voltage applied across the thickness of the DE membrane. When an AC voltage is applied, the two-layer system can generate an out-of-plane oscillation which enables its use as membrane resonators. Both experiments and simulations are carried out to study the dynamic characteristics of the system. The resonant frequencies and mode shapes of the resonator can be tuned through the passive layer properties such as the modulus, thickness, density, and size. The effective stiffness of the DE film changes as the magnitude of the voltage applied on the film changes, which provides an active way to tune the dynamic characteristics of the two-layer resonator even after the device is set. The system is also light weight, low cost, and easy to fabricate, and has great potential in many engineering applications.

  2. Fillers for gamma ray-irradiated EPR and ultralow frequency dielectric characteristics

    International Nuclear Information System (INIS)

    Yamanaka, Sanshiro; Fukuda, Tadashi; Sawa, Goro; Ieda, Masayuki; Ito, Masayuki; Kawakami, Waichiro.

    1991-01-01

    Aiming at the diagnosis of the radiation deterioration of electric power cables and wires by utilizing residual voltage, the relation of the amount of gamma ray irradiation with residual voltage has been examined for the EPR of practical mixing proportion by the authors. Moreover, as the characteristics or physical quantities used for judging the deterioration, the dielectric characteristics in ultralow frequency region and insulation resistance were taken up, and the method of analytically determine them from the results of measuring residual voltage was proposed. When the results obtained by this analytical method were compared with the results of leak current and discharge current, good agreement was obtained. However, since many kinds of fillers are added to these samples with practical mixing proportion in large quantities, it was unable to examine in detail the physical mechanism of depolarization which becomes the cause of generating residual voltage. This time, the discharge current was measured for the samples of EPR filled with only one kind of filler, hard clay, and the modeling of depolarization mecanism was attempted. The results are reported. (K.I.)

  3. Theoretical investigation of resonance frequencies in long wavelength electromagnetic wave scattering process from plasma prolate and oblate spheroids placed in a dielectric layer

    Science.gov (United States)

    Ahmadizadeh, Y.; Jazi, B.; Abdoli-Arani, A.

    2014-01-01

    Response of a prolate spheroid plasma and/or an oblate spheroid plasma in presence of long wavelength electromagnetic wave has been studied. The resonance frequencies of these objects are obtained and it is found that they reduce to the resonance frequency of spherical cold plasma. Moreover, the resonant frequencies of prolate spheroid plasma and oblate spheroid plasma covered by a dielectric are investigated as well. Furthermore, their dependency on dielectric permittivity and geometry dimensions is simulated.

  4. High-frequency plasma oscillations

    Energy Technology Data Exchange (ETDEWEB)

    Akhiezer, A I; Fainberg, Y B; Sitenko, A G; Stepanov, K; Kurilko, V; Gorbatenko, M; Kirochkin, U [Academy of Sciences of the Ukrainian SSR (USSR)

    1958-07-01

    It is well known that the electrical conductivity of a plasma, the ion-electron equilibration time, and the time required to heat the electron component of the plasma all increase greatly with increasing temperature. Consequently, the usual method of Joule heating a plasma may be difficult to apply in the region of high temperatures (> 10{sup 6}K), especially if the plasma current alone, without any additional measures, is used to generate magnetic fields for the confinement of the plasma. Therefore, it is of interest to study methods of plasma heating that do not directly use Joule heat, especially methods by which energy is directly supplied to the ion component during the time between collisions. Some of these methods make use of ionic resonance as well as other resonance phenomena which can occur in plasma in an external magnetic field. This paper deals with certain aspects of the theory of high-frequency plasma oscillations.

  5. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    Directory of Open Access Journals (Sweden)

    Laura B. Ruppalt

    2014-12-01

    Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  6. High dielectric permittivity elastomers from well-dispersed expanded graphite in low concentrations

    DEFF Research Database (Denmark)

    Daugaard, Anders Egede; Hassouneh, Suzan Sager; Kostrzewska, Malgorzata

    2013-01-01

    The development of elastomer materials with a high dielectric permittivity has attracted increased interest over the last years due to their use in for example dielectric electroactive polymers. For this particular use, both the electrically insulating properties - as well as the mechanical...

  7. High resolution imaging of dielectric surfaces with an evanescent field optical microscope

    NARCIS (Netherlands)

    van Hulst, N.F.; Segerink, Franciscus B.; Bölger, B.

    1992-01-01

    An evanescent field optical microscope (EFOM) is presented which employs frustrated total internal reflection o­n a localized scale by scanning a dielectric tip in close proximity to a sample surface. High resolution images of dielectric gratings and spheres containing both topographic and

  8. Dielectric constant and low-frequency infrared spectra for liquid water and ice Ih within the E3B model

    Energy Technology Data Exchange (ETDEWEB)

    Shi, L.; Ni, Y.; Drews, S. E. P.; Skinner, J. L. [Theoretical Chemistry Institute and Department of Chemistry, University of Wisconsin, Madison, Wisconsin 53706 (United States)

    2014-08-28

    Two intrinsic difficulties in modeling condensed-phase water with conventional rigid non-polarizable water models are: reproducing the static dielectric constants for liquid water and ice Ih, and generating the peak at about 200 cm{sup −1} in the low-frequency infrared spectrum for liquid water. The primary physical reason for these failures is believed to be the missing polarization effect in these models, and consequently various sophisticated polarizable water models have been developed. However, in this work we pursue a different strategy and propose a simple empirical scheme to include the polarization effect only on the dipole surface (without modifying a model's intermolecular interaction potential). We implement this strategy for our explicit three-body (E3B) model. Our calculated static dielectric constants and low-frequency infrared spectra are in good agreement with experiment for both liquid water and ice Ih over wide temperature ranges, albeit with one fitting parameter for each phase. The success of our modeling also suggests that thermal fluctuations about local minima and the energy differences between different proton-disordered configurations play minor roles in the static dielectric constant of ice Ih. Our analysis shows that the polarization effect is important in resolving the two difficulties mentioned above and sheds some light on the origin of several features in the low-frequency infrared spectra for liquid water and ice Ih.

  9. Low prepulse, high power density water dielectric switching

    International Nuclear Information System (INIS)

    Johnson, D.L.; VanDevender, J.P.; Martin, T.H.

    1979-01-01

    Prepulse voltage suppression has proven difficult in high power, high voltage accelerators employing self-breakdown water dielectric switches. A novel and cost effective water switch has been developed at Sandia Laboratories which reduces prepulse voltage by reducing the capacity across the switch. This prepulse suppression switch causes energy formerly stored in the switch capacity and dissipated in the arc to be useful output energy. The switching technique also allows the pulse forming lines to be stacked in parallel and electrically isolated from the load after the line has been discharged. The switch consists of a ground plane, with several holes, inserted between the switch electrodes. The output line switch electrodes extend through the holes and face electrodes on the pulse forming line (PFL). The capacity between the PFL and the output transmission line is reduced by about 80%. The gap spacing between the output line electrode and the hole in the ground plane is adjusted so that breakdown occurs after the main pulse and provides a crow bar between the load and the source. Performance data from the Proto II, Mite and Ripple test facilities are presented

  10. Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

    2016-05-01

    In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

  11. Toroidal Dielectric Tensor-Operator for Arbitrary Aspect-Ratio and Wave Frequency an Anisotropic-Resistivity MHD Formulation

    International Nuclear Information System (INIS)

    Komoshvili, K.; Cuperman, S.

    1998-01-01

    Motivated by the recently increased interest in small aspect ratio tokamaks, we have derived a 2(1/2)D dielectric tensor-operator which can properly describe the plasma response to r.f. waves, under conditions prevailing in the pre-heated stages of arbitrary aspect ratio, axisymmetric toroidal fusion devices. The derived dielectric tensor elements are based on a two-fluid, weakly collisional plasma description, with the Hall term included. They are characterized by the following features: (i) They are cast in a form evidencing the dielectric (non-operator) and operator contributions - the latter being due to the toroidal structure of the V-operators present in Maxwell's equations, on the background of equilibrium currents and pressure gradients; (ii) They are not subject to any I imitation on the (relative) magnitude of the toroidal effects - no expansion in the inverse aspect ratio parameter is used for their derivation; (iii) They include anisotropic - parallel and perpendicular to the magnetic field - contributions to the plasma resistivity; (iv) They are not Iimited by any restriction on the (relative) value of the wave frequency. The explicit, physically transparent formulation of the dielectric tensor is intended for the numerical solution of the full (E ll ≠ 0) wave equation and subsequently, evaluation of the Alfven wave current drive in small aspect ratio tokamaks

  12. High-efficiency terahertz polarization devices based on the dielectric metasurface

    Science.gov (United States)

    Zhou, Jian; Wang, JingJing; Guo, Kai; Shen, Fei; Zhou, Qingfeng; Zhiping yin; Guo, Zhongyi

    2018-02-01

    Metasurfaces are composed of the subwavelength structures, which can be used to manipulate the amplitude, phase, and polarization of incident electromagnetic waves efficiently. Here, we propose a novel type of dielectric metasurface based on crystal Si for realizing to manipulate the terahertz wave, in which by varying the geometric sizes of the Si micro-bricks, the transmitting phase of the terahertz wave can almost span over the entire 2π range for both of the x-polarization and y-polarization simultaneously, while keeping the similarly high-transmission amplitudes (over 90%). At the frequency of 1.0 THz, we have successfully designed a series of controllable THz devices, such as the polarization-dependent beam splitter, polarization-independent beam deflector and the focusing lenses based on the designed metasurfaces. Our designs are easy to fabricate and can be promising in developing high-efficiency THz functional devices.

  13. High-Order Dielectric Metasurfaces for High-Efficiency Polarization Beam Splitters and Optical Vortex Generators

    Science.gov (United States)

    Guo, Zhongyi; Zhu, Lie; Guo, Kai; Shen, Fei; Yin, Zhiping

    2017-08-01

    In this paper, a high-order dielectric metasurface based on silicon nanobrick array is proposed and investigated. By controlling the length and width of the nanobricks, the metasurfaces could supply two different incremental transmission phases for the X-linear-polarized (XLP) and Y-linear-polarized (YLP) light with extremely high efficiency over 88%. Based on the designed metasurface, two polarization beam splitters working in high-order diffraction modes have been designed successfully, which demonstrated a high transmitted efficiency. In addition, we have also designed two vortex-beam generators working in high-order diffraction modes to create vortex beams with the topological charges of 2 and 3. The employment of dielectric metasurfaces operating in high-order diffraction modes could pave the way for a variety of new ultra-efficient optical devices.

  14. Polymorphous GdScO3 as high permittivity dielectric

    International Nuclear Information System (INIS)

    Schäfer, A.; Rahmanizadeh, K.; Bihlmayer, G.; Luysberg, M.; Wendt, F.; Besmehn, A.; Fox, A.

    2015-01-01

    Four different polymorphs of GdScO 3 are assessed theoretically and experimentally with respect to their suitability as a dielectric. The calculations carried out by density functional theory reveal lattice constants, band gaps and the energies of formation of three crystal phases. Experimentally all three crystal phases and the amorphous phase can be realized as thin films by pulsed laser deposition using various growth templates. Their respective crystal structures are confirmed by X-ray diffraction and transmission electron microscopy reflecting the calculated lattice constants. X-ray photoelectron spectroscopy unveils the band gaps of the different polymorphs of GdScO 3 which are above 5 eV for all films demonstrating good insulating properties. From capacitance voltage measurements, high permittivities of up to 27 for hexagonal GdScO 3 are deduced. - Highlights: • Different epitaxial polymorph phases of GdScO 3 were grown by pulsed laser deposition. • The cubic phase of GdScO 3 is reported for the first time. • All phases are proven to be useful for the use in silicon based and III–V based microelectronic devices.

  15. Transient, polarity-dependent dielectric response in a twisted nematic liquid crystal under very low frequency excitation.

    Science.gov (United States)

    Krishnamurthy, K S

    2015-09-01

    The electric Freedericksz transition is a second-order quadratic effect, which, in a planarly aligned nematic liquid crystal layer, manifests above a threshold field as a homogeneous symmetric distortion with maximum director-tilt in the midplane. We find that, upon excitation by a low frequency (wave field, the instability becomes spatially and temporally varying. This is demonstrated using calamitic liquid crystals, initially in the 90°-twisted planar configuration. The distortion occurs close to the negative electrode following each polarity switch and, for low-voltage amplitudes, decays completely in time. We use the elastically favorable geometry of Brochard-Leger walls to establish the location of maximum distortion. Thus, at successive polarity changes, the direction of extension of both annular and open walls switches between the alignment directions at the two substrates. For high voltages, this direction is largely along the midplane director, while remaining marginally oscillatory. These results are broadly understood by taking into account the time-varying and inhomogeneous field conditions that prevail soon after the polarity reverses. Polarity dependence of the instability is traced to the formation of intrinsic double layers that lead to an asymmetry in field distribution in the presence of an external bias. Momentary field elevation near the negative electrode following a voltage sign reversal leads to locally enhanced dielectric and gradient flexoelectric torques, which accounts for the surface-like phenomenon observed at low voltages. These spatiotemporal effects, also found earlier for other instabilities, are generic in nature.

  16. Econometrics of financial high-frequency data

    CERN Document Server

    Hautsch, Nikolaus

    2011-01-01

    This book covers major approaches in high-frequency econometrics. It discusses implementation details, provides insights into properties of high-frequency data as well as institutional settings and presents applications.

  17. Characterization of Anodized Titanium Based Novel Paradigm Supercapacitors: Impact of Salt Identity and Frequency on Dielectric Values, Power, and Energy Densities

    Science.gov (United States)

    2017-03-01

    solution, sufficient charge carriers to counteract the applied but not cause ion- lock , are energy densities at their maximum. For the salt identities and...OF ANODIZED TITANIUM- BASED NOVEL PARADIGM SUPERCAPACITORS: IMPACT OF SALT IDENTITY AND FREQUENCY ON DIELECTRIC VALUES, POWER, AND ENERGY DENSITIES...SUBTITLE CHARACTERIZATION OF ANODIZED TITANIUM-BASED NOVEL PARADIGM SUPERCAPACITORS: IMPACT OF SALT IDENTITY AND FREQUENCY ON DIELECTRIC VALUES, POWER

  18. Dielectric Properties of Marsh Vegetation in a Frequency Range of 0.1-18 GHz Under Variation of Temperature and Moisture

    Science.gov (United States)

    Romanov, A. N.; Kochetkova, T. D.; Suslyaev, V. I.; Shcheglova, A. S.

    2017-09-01

    Dielectric characteristics of some species of marsh vegetation: lichen Cladonia stellaris (Opiz) Pouzar, moss Sphagnum, and a representative of Bryidae mosses - Dicranum polysetum are studied in the frequency range from 100 MHz to 18 GHz. At a frequency of 1.41 GHz, the influence of temperature in the range from -12 to +20°C on the behavior of dielectric characteristics of mosses, lichens, and peat is studied. The dependences of the dielectric characteristics of vegetation on the volumetric wetness are established.

  19. Dielectric properties of gadolinium molybdate in low- and infralow frequency electric fields. Diehlektricheskie svojstva molibdata gadoliniya v nizko- i infranizkochastotnykh ehlektricheskikh polyakh

    Energy Technology Data Exchange (ETDEWEB)

    Galiyarova, N M; Gorin, S V; Dontsova, L I; Shil' nikov, A V; Shuvalov, L A [Volgogradskij Inzhenerno-Stroitel' nyj Inst., Volgograd (Russian Federation) AN SSSR, Moscow (Russian Federation). Inst. Kristallografii

    1992-10-01

    Temperature dependences of complex dielectric permittivity of gadolinium molybdate (GMO) in low- (LF) and infralow-frequency (ILF) electric fields with 0.1 V[center dot]cm[sup -1] amplitude within 0.25-10[sup 4] Hz frequency range are studied. Substantial effect of the crystal prehistory on LF and ILF dielectric properties and domain structure state is revealed. An anomalous reduction of complex dielectric permittivity accompanied by the occurrence of the Debye LF-dispersion of permittivity is detected under the sample cooling from a nonpolar phase.

  20. Numerical studies of independent control of electron density and gas temperature via nonlinear coupling in dual-frequency atmospheric pressure dielectric barrier discharge plasmas

    International Nuclear Information System (INIS)

    Zhang, Z. L.; Nie, Q. Y.; Wang, Z. B.; Gao, X. T.; Kong, F. R.; Sun, Y. F.; Jiang, B. H.

    2016-01-01

    Dielectric barrier discharges (DBDs) provide a promising technology of generating non-equilibrium cold plasmas in atmospheric pressure gases. For both application-focused and fundamental studies, it is important to explore the strategy and the mechanism for enabling effective independent tuning of key plasma parameters in a DBD system. In this paper, we report numerical studies of effects of dual-frequency excitation on atmospheric DBDs, and modulation as well as separate tuning mechanism, with emphasis on dual-frequency coupling to the key plasma parameters and discharge evolution. With an appropriately applied low frequency to the original high frequency, the numerical calculation demonstrates that a strong nonlinear coupling between two frequencies governs the process of ionization and energy deposition into plasma, and thus raises the electron density significantly (e.g., three times in this case) in comparisons with a single frequency driven DBD system. Nevertheless, the gas temperature, which is mainly determined by the high frequency discharge, barely changes. This method then enables a possible approach of controlling both averaged electron density and gas temperature independently.

  1. Low frequency ac conduction and dielectric relaxation in poly(N ...

    Indian Academy of Sciences (India)

    Unknown

    polymer chain in the form of bands analogous to that of a semiconductor and the ... these materials a model has been proposed which suggests the application of two .... values is almost equal to dc conductivity value while in high frequency ...

  2. High-strain actuator materials based on dielectric elastomers

    DEFF Research Database (Denmark)

    Pelrine, R.; Kornbluh, R.; Kofod, G.

    2000-01-01

    Dielectric elastomers are a new class of actuator materials that exhibit excellent performance. The principle of operation, as well as methods to fabricate and test these elastomers, is summarized here. The Figure is a sketch of an elastomer film (light gray) stretched on a frame (black) and patt......Dielectric elastomers are a new class of actuator materials that exhibit excellent performance. The principle of operation, as well as methods to fabricate and test these elastomers, is summarized here. The Figure is a sketch of an elastomer film (light gray) stretched on a frame (black...

  3. High energy density, long life energy storage capacitor dielectric system

    International Nuclear Information System (INIS)

    Nichols, D.H.; Wilson, S.R.

    1977-01-01

    The evolution of energy storage dielectric systems shows a dramatic improvement in life and joule density, culminating in a 50% to 300% life improvement of polypropylene film-paper-phthalate ester over paper-castor oil depending on service. The physical and electrical drawbacks of castor oil are not present in the new system, allowing the capacitor designer to utilize the superior insulation resistance, dielectric strength, and corona resistance to full advantage. The result is longer life for equal joule density or greater joule density for equal life. Field service proof of the film-Geconol system superiority is based on 5 megajoule in operation and 16 megajoule on order

  4. A new soft dielectric silicone elastomer matrix with high mechanical integrity and low losses

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    Though dielectric elastomers (DEs) have many favourable properties, the issue of high driving voltages limits the commercial viability of the technology. Driving voltage can be lowered by decreasing the Young's modulus and increasing the dielectric permittivity of silicone elastomers. A decrease...... in Young's modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. A new soft elastomer matrix, with no loss of mechanical stability and high dielectric permittivity, was prepared through the use of alkyl chloride-functional siloxane copolymers...

  5. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    International Nuclear Information System (INIS)

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. AN OVERVIEW OF HIGH VOLTAGE DIELECTRIC MATERIAL FOR TRAVELING WAVE KICKER MAGNET APPLICATION

    International Nuclear Information System (INIS)

    ZHANG, W.; SANDBERG, J.; TUOZZOLO, J.; CASSEL, R.; DUCIMETIERE, L.; JENSEN, C.; BARNES, M.; WAIT, G.; WANG, J.

    2002-01-01

    Pulsed high power fast kickers are being used to change beam trajectories in particle accelerators. The fast rise and fall time of pulse waveform demands a transmission line structure for the kicker deflector design. The ideal design will be parallel metal plates. However, it uses very long straight sections to achieve the required deflection. In accelerators with constrained straight sections, high permeability materials such as ferrite have to be used to gain deflection efficiency. The transmission line kicker magnet is also referred as traveling wave kicker magnet. Its construction is based on distributed 1-C cells along the longitudinal direction. The magnetic cells and capacitive cells are interleaved to simulate the characteristic impedance of a transmission line to minimize pulse reflection, and provide adequate frequency bandwidth to transmit the kicker pulse with fast rise and fall time. The magnetic cells are usually made of ferrite ceramics, but the capacitive cells have been made with different materials. For traveling wave kickers with higher impedance, the parallel plate vacuum capacitor has been used in CERN and KEK design. Others have used ceramic capacitors, printed circuit boards, and high permittivity ceramics as the capacitive cell. The high dielectric material has the advantage of compactness for low impedance kicker magnet construction. It continues to be very attractive for future kicker magnet applications. The high voltage phenomena associated with high dielectric ceramic materials have been widely reported in many industrial application areas. Their implication in the traveling wave magnet application has to be well understood. In this presentation, the areas requiring further quantitative study will be outlined

  7. Development of High-Gradient Dielectric Laser-Driven Particle Accelerator Structures

    Energy Technology Data Exchange (ETDEWEB)

    Byer, Robert L. [Stanford Univ., CA (United States). Edward L. Ginzton Lab.

    2013-11-07

    The thrust of Stanford's program is to conduct research on high-gradient dielectric accelerator structures driven with high repetition-rate, tabletop infrared lasers. The close collaboration between Stanford and SLAC (Stanford Linear Accelerator Center) is critical to the success of this project, because it provides a unique environment where prototype dielectric accelerator structures can be rapidly fabricated and tested with a relativistic electron beam.

  8. Contamination aspects in integrating high dielectric constant and ferroelectric materials into CMOS processes

    OpenAIRE

    Boubekeur, Hocine

    2004-01-01

    n memory technology, new materials are being intensively investigated to overcome the integration limits of conventional dielectrics for Giga-bit scale integration, or to be able to produce new types of non-volatile low power memories such as FeRAM. Perovskite type high dielectric constant films for use in Giga-bit scale memories or layered perovskite films for use in non-volatile memories involve materials to semiconductor process flows, which entail a high risk of contamination. The introdu...

  9. Influence of SrTiO3 modification on dielectric properties of Mg(Zr0.05Ti0.95)O3 ceramics at microwave frequency

    International Nuclear Information System (INIS)

    Tseng, Ching-Fang; Lu, Shu-Cheng

    2013-01-01

    Highlights: ► The microwave dielectric properties of (1−x)Mg(Zr 0.05 Ti 0.95 )O 3 –xSrTiO 3 system have been discussed. ► The dielectric constant and τ f increased; nevertheless, the Q × f decreased with an increase in x. ► Second phases were formed and affected the microwave dielectric properties of (1−x)MZT–xST system. ► ε r of 20.8, Q × f of 257,000, and τ f of 0.2 ppm/°C were obtained for the 0.06Mg(Zr 0.05 Ti 0.95 )O 3 –0.04SrTiO 3 ceramics. ► Due to high-quality factor and near-zero τ f , MZT–ST demonstrate a good potential for use in microwave devices. -- Abstract: The microwave dielectric properties and microstructures were investigated in the (1−x)Mg(Zr 0.05 Ti 0.95 )O 3 –xSrTiO 3 (hereafter referred to as (1−x)MZT–xST) system. The compounds were prepared via the conventional solid-state reaction. Compositions in the (1−x)Mg(Zr 0.05 Ti 0.95 )O 3 –xSrTiO 3 system were designed to compensate the negative temperature coefficient of the resonant frequency of Mg(Zr 0.05 Ti 0.95 )O 3 . The values displayed nonmonotonic mixture-like behavior, because the TiO 2 phase was formed in the MZT composite ceramics with increasing x. A close zero τ f of 0.2 ppm/°C could be achieved at 0.96MZT–0.04ST with ε r = 20.8 and Q × f = 257,000 GHz

  10. Modeling of leakage currents in high-k dielectrics

    International Nuclear Information System (INIS)

    Jegert, Gunther Christian

    2012-01-01

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO 2 material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO 2 /TiN capacitor structures were suggested and problem areas that may

  11. Modeling of leakage currents in high-k dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Jegert, Gunther Christian

    2012-03-15

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO{sub 2} material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO{sub 2}/TiN capacitor structures were suggested and problem areas

  12. High pressure dielectric studies on the structural and orientational glass.

    Science.gov (United States)

    Kaminska, E; Tarnacka, M; Jurkiewicz, K; Kaminski, K; Paluch, M

    2016-02-07

    High pressure dielectric studies on the H-bonded liquid D-glucose and Orientationally Disordered Crystal (ODIC) 1,6-anhydro-D-glucose (levoglucosan) were carried out. It was shown that in both compounds, the structural relaxation is weakly sensitive to compression. It is well reflected in the low pressure coefficient of the glass transition and orientational glass transition temperatures which is equal to 60 K/GPa for both D-glucose and 1,6-anhydro-D-glucose. Although it should be noted that ∂Tg(0)/∂p evaluated for the latter compound seems to be enormously high with respect to other systems forming ODIC phase. We also found that the shape of the α-loss peak stays constant for the given relaxation time independently on the thermodynamic condition. Consequently, the Time Temperature Pressure (TTP) rule is satisfied. This experimental finding seems to be quite intriguing since the TTP rule was shown to work well in the van der Waals liquids, while in the strongly associating compounds, it is very often violated. We have also demonstrated that the sensitivity of the structural relaxation process to the temperature change measured by the steepness index (mp) drops with pressure. Interestingly, this change is much more significant in the case of D-glucose with respect to levoglucosan, where the fragility changes only slightly with compression. Finally, kinetics of ODIC-crystal phase transition was studied at high compression. It is worth mentioning that in the recent paper, Tombari and Johari [J. Chem. Phys. 142, 104501 (2015)] have shown that ODIC phase in 1,6-anhydro-D-glucose is stable in the wide range of temperatures and there is no tendency to form more ordered phase at ambient pressure. On the other hand, our isochronal measurements performed at varying thermodynamic conditions indicated unquestionably that the application of pressure favors solid (ODIC)-solid (crystal) transition in 1,6-anhydro-D-glucose. This result mimics the impact of pressure on the

  13. The effects of frequency and {gamma}-irradiation on the dielectric properties of MIS type Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tataroglu, A. [Department of Physics, Faculty of Arts and Sciences, Teknikokullar, Gazi University, 06500 Ankara (Turkey)]. E-mail: ademt@gazi.edu.tr; Altindal, S. [Department of Physics, Faculty of Arts and Sciences, Teknikokullar, Gazi University, 06500 Ankara (Turkey)

    2007-01-15

    The effects of {gamma}-irradiation on the dielectric properties of Al/SiO{sub 2}/p-Si (MIS) Schottky diodes were investigated using capacitance-voltage (C-V) and conductance-voltage (G/{omega}-V) characteristics. Before irradiation, the C-V and G/{omega}-V characteristics were measured by applying a small ac signal of 50 mV amplitude and 100 Hz-1 MHz frequencies, while the dc voltage was swept from positive bias to negative bias for MIS Schottky diodes. Afterwards, the C-V and G/{omega}-V measurements carried out at various radiation doses and 1 MHz. The MIS Schottky diodes were exposed to a {sup 60}Co {gamma}-radiation source at a dose of 2.12 kGy/h and the total dose range was from zero to 450 kGy. The dielectric constant ({epsilon}'), dielectric loss ({epsilon}''), loss tangent (tan {delta}) and ac electrical conductivity ({sigma} {sub ac}) were calculated from the C-V and G/{omega}-V measurements and plotted as a function of frequency and radiation dose. Experimental results show that the {epsilon}' and {epsilon}'' were found to decrease with increasing frequency while increase with increasing radiation dose. In addition, tan {delta} versus log f show a peak, which was not present in the tan {delta} versus radiation dose. Also, the {sigma} {sub ac} is found to increase with increasing radiation dose. These changes were attributed to mobile charge carriers or dipolar molecules generated by structural changes in the irradiated samples.

  14. Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co{sub 3}O{sub 4}-PVA/p-Si structures

    Energy Technology Data Exchange (ETDEWEB)

    Bilkan, Çiğdem, E-mail: cigdembilkan@gmail.com [Department of Physics, Faculty of Sciences, The University of Çankırı Karatekin, 18100 Çankırı (Turkey); Azizian-Kalandaragh, Yashar [Department of Physics, Faculty of Science, The University of Mohaghegh Ardabili, Ardabil (Iran, Islamic Republic of); Altındal, Şemsettin [Department of Physics, Faculty of Sciences, The University of Gazi, 06500 Ankara (Turkey); Shokrani-Havigh, Roya [Department of Physics, Faculty of Science, The University of Mohaghegh Ardabili, Ardabil (Iran, Islamic Republic of)

    2016-11-01

    In this research a simple microwave-assisted method have been used for preparation of cobalt oxide nanostructures. The as-prepared sample has been investigated by UV–vis spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM). On the other hand, frequency and voltage dependence of both the real and imaginary parts of dielectric constants (ε′, ε″) and electric modulus (M′ and M″), loss tangent (tanδ), and ac electrical conductivity (σ{sub ac}) values of Al/Co{sub 3}O{sub 4}-PVA/p-Si structures were obtained in the wide range of frequency and voltage using capacitance (C) and conductance (G/ω) data at room temperature. The values of ε′, ε″ and tanδ were found to decrease with increasing frequency almost for each applied bias voltage, but the changes in these parameters become more effective in the depletion region at low frequencies due to the charges at surface states and their relaxation time and polarization effect. While the value of σ is almost constant at low frequency, increases almost as exponentially at high frequency which are corresponding to σ{sub dc} and σ{sub ac}, respectively. The M′ and M″ have low values at low frequencies region and then an increase with frequency due to short-range mobility of charge carriers. While the value of M′ increase with increasing frequency, the value of M″ shows two peak and the peaks positions shifts to higher frequency with increasing applied voltage due to the decrease of the polarization and N{sub ss} effects with increasing frequency.

  15. High voltage capacitor design and the determination of solid dielectric voltage breakdown

    International Nuclear Information System (INIS)

    Hutapea, S.

    1976-01-01

    The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

  16. Optical design for increased interaction length in a high gradient dielectric laser accelerator

    OpenAIRE

    Cesar, D.; Maxson, J.; Musumeci, P.; Shen, X.; England, R. J.; Wootton, K. P.

    2018-01-01

    We present a methodology for designing and measuring pulse front tilt in an ultrafast laser for use in dielectric laser acceleration. Previous research into dielectric laser accelerating modules has focused on measuring high accelerating gradients in novel structures, but has done so only for short electron-laser coupling lengths. Here we demonstrate an optical design to extend the laser-electron interaction to 1mm.

  17. Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

    Science.gov (United States)

    Fan, Wei

    To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers

  18. High Frequency Components Recovery in Music Signals

    Directory of Open Access Journals (Sweden)

    V. Sebesta

    1999-04-01

    Full Text Available A new technique is presented which improves the subjective quality of band-limited music by recovery of high frequency components. Sequences of harmonics are found in the band-limited signal and these sequences are expanded to the high frequency band to estimate the lost part of spectrum. High frequency signal is generated to match this estimation and is added to the band-limited signal.

  19. Low frequency modelling of hysteresis behaviour and dielectric permittivity in ferroelectric ceramics under electric field

    International Nuclear Information System (INIS)

    Ducharne, B; Guyomar, D; Sebald, G

    2007-01-01

    The properties of ferroelectric ceramics strongly depend on the electromechanical loading and their measurement conditions. In this paper, a nonlinear phenomenological one-dimensional model based on the dry friction concept is presented to describe the hysteretic polarization behaviour. Dielectric permittivities versus dc electric field (or capacitance C versus voltage V) loops are determined for the characterization of ferroelectric material. The ε 33 coefficient is used for the ceramic characterization because it is strongly correlated with the ceramic quality. The purpose of this paper is to develop a model of reversal polarization behaviour close to physical realities, able to provide good performances on the simulation of dielectric permittivity loop ε 33 (E dc ). Simulated behaviours are finally compared with experimental results on a typically soft PZT ferroelectric ceramic

  20. Influence of Low Speed Rolling Movement on High Electrical Breakdown for Water Dielectric with Microsecond Charging

    International Nuclear Information System (INIS)

    Zhang Zicheng; Zhang Jiande; Yang Jianhua

    2006-01-01

    By means of a coaxial apparatus, high electrical breakdown experiments are carried out in the rest state and the low speed rolling state with microsecond charging and the experimental results are analyzed. The conclusions are: (1) the breakdown stress of water dielectric in the rolling state is in good agreement with that in Martin formula, and so is that in the rest state; (2) the breakdown stress of water dielectric in the rolling state is about 5% higher than that in the rest state; (3) the results simulated with ANSYS demonstrate that the breakdown stress of water dielectric decreases when the bubbles appear near the surface of electrodes; (4) the primary mechanism to increase the breakdown stress of water dielectric in the rolling state is that the bubbles are driven away and the number of bubbles near the surface of electrodes is decreased by rolling movement

  1. Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors

    Directory of Open Access Journals (Sweden)

    S. Demirezen

    Full Text Available In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of ε′, ε′, tanδ, electric modulus (M′ and M″ and σac of PrBaCoO nanofiber capacitor have been investigated by using impedance spectroscopy method. The obtained experimental results show that the values of ε′, ε′, tanδ, M′, M″ and σac of the PrBaCoO nanofiber capacitor are strongly dependent on frequency of applied bias voltage. The values of ε′, ε″ and tanδ show a steep decrease with increasing frequency for each forward bias voltage, whereas the values of σac and the electric modulus increase with increasing frequency. The high dispersion in ε′ and ε″ values at low frequencies may be attributed to the Maxwell–Wagner and space charge polarization. The high values of ε′ may be due to the interfacial effects within the material, PrBaCoO nanofibers interfacial layer and electron effect. The values of M′ and M″ reach a maximum constant value corresponding to M∞ ≈ 1/ε∞ due to the relaxation process at high frequencies, but both the values of M′ and M″ approach almost to zero at low frequencies. The changes in the dielectric and electrical properties with frequency can be also attributed to the existence of Nss and Rs of the capacitors. As a result, the change in the ε′, ε″, tanδ, M′, M″ and ac electric conductivity (σac is a result of restructuring and reordering of charges at the PrBaCoO/n-Si interface under an external electric field or voltage and interface polarization. Keywords: Thin films, Electrical properties, Interface/interphase

  2. High-κ gate dielectrics: Current status and materials properties considerations

    Science.gov (United States)

    Wilk, G. D.; Wallace, R. M.; Anthony, J. M.

    2001-05-01

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward successful integration into the expected processing conditions for future CMOS technologies, especially due to their tendency to form at interfaces with Si (e.g. silicates). These pseudobinary systems also thereby enable the use of other high-κ materials by serving as an interfacial high-κ layer. While work is ongoing, much research is still required, as it is clear that any material which is to replace SiO2 as the gate dielectric faces a formidable challenge. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

  3. Lightweight, high-frequency transformers

    Science.gov (United States)

    Schwarze, G. E.

    1983-01-01

    The 25-kVA space transformer was developed under contract by Thermal Technology Laboratory, Buffalo, N. Y. The NASA Lewis transformer technology program attempted to develop the baseline technology. For the 25-kVA transformer the input voltage was chosen as 200 V, the output voltage as 1500 V, the input voltage waveform as square wave, the duty cycle as continuous, the frequency range (within certain constraints) as 10 to 40 kHz, the operating temperatures as 85 deg. and 130 C, the baseplate temperature as 50 C, the equivalent leakage inductance as less than 10 micro-h, the operating environment as space, and the life expectancy as 10 years. Such a transformer can also be used for aircraft, ship and terrestrial applications.

  4. Trends of microwave dielectric materials for antenna application

    International Nuclear Information System (INIS)

    Sulong, T. A. T.; Osman, R. A. M.; Idris, M. S.

    2016-01-01

    Rapid development of a modern microwave communication system requires a high quality microwave dielectric ceramic material to be used as mobile and satellite communication. High permittivity of dielectric ceramics leads to fabrication of compact device for electronic components. Dielectric ceramics which used for microwave applications required three important parameters such as high or appropriate permittivity (ε_r), high quality factor (Q _f ≥ 5000 GH z) and good temperature coefficient of resonant frequency (τ_f). This paper review of various dielectric ceramic materials used as microwave dielectric materials and related parameters for antenna applications.

  5. Trends of microwave dielectric materials for antenna application

    Energy Technology Data Exchange (ETDEWEB)

    Sulong, T. A. T., E-mail: tuanamirahtuansulong@gmail.com; Osman, R. A. M., E-mail: rozana@unimap.edu.my [School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Arau, Perlis (Malaysia); Idris, M. S., E-mail: sobri@unimap.edu.my [Sustainable Engineering Research Cluster, School of Material Engineering, Universiti Malaysia Perlis, Blok B, Taman Pertiwi Indah, Seriab, 01000 Kangar, Perlis (Malaysia)

    2016-07-19

    Rapid development of a modern microwave communication system requires a high quality microwave dielectric ceramic material to be used as mobile and satellite communication. High permittivity of dielectric ceramics leads to fabrication of compact device for electronic components. Dielectric ceramics which used for microwave applications required three important parameters such as high or appropriate permittivity (ε{sub r}), high quality factor (Q {sub f} ≥ 5000 GH z) and good temperature coefficient of resonant frequency (τ{sub f}). This paper review of various dielectric ceramic materials used as microwave dielectric materials and related parameters for antenna applications.

  6. 4f-5d hybridization in a high k dielectric

    International Nuclear Information System (INIS)

    Losovyj, Ya.B.; Tang, Jinke; Wang, Wendong; Hong Yuanjia; Palshin, Vadim; Tittsworth, Roland

    2006-01-01

    While intra-atomic f-d hybridization is expected, experimental confirmation of f-d hybridization in the photoemission final state leading to 4f band structure has been limited to 5f systems and compound systems with very shallow 4f levels. We demonstrate that core 4f states can contribute to the valence band structure in a wide band gap dielectric, in this case HfO 2 in the photoemission final state. In spite of the complications of sample charging, we find evidence of symmetry in the shallow 4f levels and wave vector dependent band dispersion, the latter consistent with the crystal structure of HfO 2

  7. High frequency modeling of power transformers. Stresses and diagnostics

    Energy Technology Data Exchange (ETDEWEB)

    Bjerkan, Eilert

    2005-05-15

    In this thesis a reliable, versatile and rigorous method for high frequency power transformer modeling is searched and established. The purpose is to apply this model to sensitivity analysis of FRA (Frequency Response Analysis) which is a quite new diagnostic method for assessing the mechanical integrity of power transformer windings on-site. The method should be versatile in terms of being able to estimate internal and external over voltages and resonances. Another important aspect is that the method chosen is suitable for real transformer geometries. In order to verify the suitability of the model for real transformers, a specific test-object is used. This is a 20MVA transformer, and details are given in chapter 1.4. The high frequency power transformer model is established from geometrical and constructional information from the manufacturer, together with available material characteristics. All circuit parameters in the lumped circuit representation are calculated based on these data. No empirical modifications need to be performed. Comparison shows capability of reasonable accuracy in the range from 10 khz to 1 MHz utilizing a disc-to-disc representation. A compromise between accuracy of model due to discretization and complexity of the model in a turn-to-turn representation is inevitable. The importance of the iron core is emphasized through a comparison of representations with/without the core included. Frequency-dependent phenomena are accurately represented using an isotropic equivalent for windings and core, even with a coarse mesh for the FEM-model. This is achieved through a frequency-dependent complex permeability representation of the materials. This permeability is deduced from an analytical solution of the frequency-dependent magnetic field inside the conductors and the core. The importance of dielectric losses in a transformer model is also assessed. Since published data on the high frequency properties of press board are limited, some initial

  8. Artificial dispersion via high-order homogenization: magnetoelectric coupling and magnetism from dielectric layers

    Science.gov (United States)

    Liu, Yan; Guenneau, Sébastien; Gralak, Boris

    2013-01-01

    We investigate a high-order homogenization (HOH) algorithm for periodic multi-layered stacks. The mathematical tool of choice is a transfer matrix method. Expressions for effective permeability, permittivity and magnetoelectric coupling are explored by frequency power expansions. On the physical side, this HOH uncovers a magnetoelectric coupling effect (odd-order approximation) and artificial magnetism (even-order approximation) in moderate contrast photonic crystals. Comparing the effective parameters' expressions of a stack with three layers against that of a stack with two layers, we note that the magnetoelectric coupling effect vanishes while the artificial magnetism can still be achieved in a centre-symmetric periodic structure. Furthermore, we numerically check the effective parameters through the dispersion law and transmission property of a stack with two dielectric layers against that of an effective bianisotropic medium: they are in good agreement throughout the low-frequency (acoustic) band until the first stop band, where the analyticity of the logarithm function of the transfer matrix () breaks down. PMID:24101891

  9. Soft Functional Silicone Elastomers with High Dielectric Permittivty: Simple Additives vs. Cross-Linked Synthesized Copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

    Though dielectric elastomers (DEs) have many favorable properties, the issue of high driving voltages limits the commercial viability of the technology. Improved actuation at lower voltages can be obtained by decreasing the Young’s modulus and/or decreasing the dielectric permittivity of the elas......Though dielectric elastomers (DEs) have many favorable properties, the issue of high driving voltages limits the commercial viability of the technology. Improved actuation at lower voltages can be obtained by decreasing the Young’s modulus and/or decreasing the dielectric permittivity...... of the elastomer. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE whereas addition of high permittivity fillers such as metal oxides often increases Young’s modulus such that improved actuation is not accomplished. New soft...... silicone elastomers with high dielectric permittivity were prepared through the use of chloropropyl-functional silicones. One method was through the synthesis of modular cross-linkable chloropropyl-functional copolymers that allow for a high degree of chemical freedom such that a tuneable silicone...

  10. Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response

    Science.gov (United States)

    Scarisoreanu, N. D.; Craciun, F.; Birjega, R.; Ion, V.; Teodorescu, V. S.; Ghica, C.; Negrea, R.; Dinescu, M.

    2016-05-01

    BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ priced target.

  11. Enhanced performance in capacitive force sensors using carbon nanotube/polydimethylsiloxane nanocomposites with high dielectric properties

    Science.gov (United States)

    Jang, Hyeyoung; Yoon, Hyungsuk; Ko, Youngpyo; Choi, Jaeyoo; Lee, Sang-Soo; Jeon, Insu; Kim, Jong-Ho; Kim, Heesuk

    2016-03-01

    Force sensors have attracted tremendous attention owing to their applications in various fields such as touch screens, robots, smart scales, and wearable devices. The force sensors reported so far have been mainly focused on high sensitivity based on delicate microstructured materials, resulting in low reproducibility and high fabrication cost that are limitations for wide applications. As an alternative, we demonstrate a novel capacitive-type force sensor with enhanced performance owing to the increased dielectric properties of elastomers and simple sensor structure. We rationally design dielectric elastomers based on alkylamine modified-multi-walled carbon nanotube (MWCNT)/polydimethylsiloxane (PDMS) composites, which have a higher dielectric constant than pure PDMS. The alkylamine-MWCNTs show excellent dispersion in a PDMS matrix, thus leading to enhanced and reliable dielectric properties of the composites. A force sensor array fabricated with alkylamine-MWCNT/PDMS composites presents an enhanced response due to the higher dielectric constant of the composites than that of pure PDMS. This study is the first to report enhanced performance of capacitive force sensors by modulating the dielectric properties of elastomers. We believe that the disclosed strategy to improve the sensor performance by increasing the dielectric properties of elastomers has great potential in the development of capacitive force sensor arrays that respond to various input forces.Force sensors have attracted tremendous attention owing to their applications in various fields such as touch screens, robots, smart scales, and wearable devices. The force sensors reported so far have been mainly focused on high sensitivity based on delicate microstructured materials, resulting in low reproducibility and high fabrication cost that are limitations for wide applications. As an alternative, we demonstrate a novel capacitive-type force sensor with enhanced performance owing to the increased

  12. Dielectric inspection of erythrocyte morphology

    International Nuclear Information System (INIS)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio; Asami, Koji

    2008-01-01

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes

  13. Dielectric inspection of erythrocyte morphology

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio [Life Science Laboratory, Materials Laboratories, Sony Corporation, Sony Bioinformatics Center, Tokyo Medical and Dental University, Bunkyo-ku, Tokyo 113-8510 (Japan); Asami, Koji [Laboratory of Molecular Aggregation Analysis, Division of Multidisciplinary Chemistry, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)], E-mail: Yoshihito.Hayashi@jp.sony.com

    2008-05-21

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes.

  14. Time-and-frequency domains approach to data processing in multiwavelength optical scatterometry of dielectric gratings

    KAUST Repository

    Granet, Gérard

    2013-01-01

    This paper focuses on scatterometry problems arising in lithography production of periodic gratings. Namely, the paper introduces a theoretical and numerical-modeling-oriented approach to scatterometry problems and discusses its capabilities. The approach allows for reliable detection of deviations in gratings\\' critical dimensions (CDs) during the manufacturing process. The core of the approach is the one-to-one correspondence between the electromagnetic (EM) characteristics and the geometric/material properties of gratings. The approach is based on highly accurate solutions of initial boundary-value problems describing EM waves\\' interaction on periodic gratings. The advantage of the approach is the ability to perform simultaneously and interactively both in frequency and time domains under conditions of possible resonant scattering of EM waves by infinite or finite gratings. This allows a detection of CDs for a wide range of gratings, and, thus is beneficial for the applied scatterometry. (C) 2013 Optical Society of America

  15. Time-and-frequency domains approach to data processing in multiwavelength optical scatterometry of dielectric gratings

    KAUST Repository

    Granet, Gé rard; Melezhik, Petr N.; Sirenko, Kostyantyn; Yashina, Nataliya P.

    2013-01-01

    This paper focuses on scatterometry problems arising in lithography production of periodic gratings. Namely, the paper introduces a theoretical and numerical-modeling-oriented approach to scatterometry problems and discusses its capabilities. The approach allows for reliable detection of deviations in gratings' critical dimensions (CDs) during the manufacturing process. The core of the approach is the one-to-one correspondence between the electromagnetic (EM) characteristics and the geometric/material properties of gratings. The approach is based on highly accurate solutions of initial boundary-value problems describing EM waves' interaction on periodic gratings. The advantage of the approach is the ability to perform simultaneously and interactively both in frequency and time domains under conditions of possible resonant scattering of EM waves by infinite or finite gratings. This allows a detection of CDs for a wide range of gratings, and, thus is beneficial for the applied scatterometry. (C) 2013 Optical Society of America

  16. Influence of calcination temperature on sol-gel synthesized single-phase bismuth titanate for high dielectric capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Thiruramanathan, Pandirengan; Marikani, Arumugam [Mepco Schlenk Engineering College, Tamil Nadu (India). Dept. of Physics; Madhavan, Durairaj [Mepco Schlenk Engineering College, Tamil Nadu (India). Dept. of Chemistry; Bharadwaj, Suresh; Awasthi, Anand Mohan [UGC-DAE Consortium for Scientific Research, Indore (India). Thermodynamics Lab.

    2016-05-15

    An inexpensive sol-gel combustion method using citric acid as fuel has been used to synthesize bismuth titanate, Bi{sub 4}Ti{sub 3}O{sub 12} nanopowders. Thermogravimetric analysis proved that a calcination temperature of 900 C is sufficient for the preparation of single-phase bismuth titanate. X-ray diffraction and Fourier transform infrared spectroscopy are used to examine the influence of calcination temperature on the structural growth of the Bi{sub 4}Ti{sub 3}O{sub 12} nanopowder. The average crystallite size estimated by using the Scherrer method and the Williamson-Hall method was found to increase with calcination temperature. Photoluminescence behavior as a function of calcination temperature was observed at two different excitation wavelengths of 300 nm and 420 nm. The morphology of the particles analyzed using images obtained from field emission scanning electron microscopy displayed irregular, random sized, and spherical-shaped structures. The stoichiometry and purity of the nanopowder are confirmed by energy-dispersive spectroscopy. The broadband dielectric results established the highest dielectric constant (ε{sub r} = 450) for a frequency of 100 Hz achieved with a potential capacitance of 138 pF m{sup -2}. This establishes Bi{sub 4}Ti{sub 3}O{sub 12} as a promising dielectric material for achieving high energy density capacitors for the next-generation passive devices.

  17. Aging phenomena of chitosan and chitosan-diclofenac sodium system detected by low-frequency dielectric spectroscopy.

    Science.gov (United States)

    Bodek, K H; Bak, G W

    1999-09-01

    The use of natural polymers for design of dosage form has received considerable attention recently, especially from the safety point of view. Among these polymers, chitosan shows very interesting biological, chemical and physical properties which makes it possible to use chitosan for various pharmaceutical applications. Microcrystalline chitosan (MCCh) is a special multifunctional polymeric material existing in the form of either of gelatinous water dispersion or a powder. Thermal aging of chitosan and chitosan-diclofenac sodium mixture have been studied using low-frequency dielectric measurements. The aging was carried out by annealing in ambient atmosphere in the temperature range between 25 degrees C and 100 degrees C. The dielectric losses in the aged samples proved to decrease by about one order of magnitude. The additional measurements of molecular weight distribution and infrared absorption were also carried out for better understanding of nature of the ageing phenomena. Partial evacuation of water, cross-linking and improvement of structural order may be suggested to be a result of thermal aging of the investigated materials.

  18. High-frequency conductivity of photoionized plasma

    Energy Technology Data Exchange (ETDEWEB)

    Anakhov, M. V.; Uryupin, S. A., E-mail: uryupin@sci.lebedev.ru [National Research Nuclear University “MEPhI,” (Russian Federation)

    2016-08-15

    The tensor of the high-frequency conductivity of a plasma created via tunnel ionization of atoms in the field of linearly or circularly polarized radiation is derived. It is shown that the real part of the conductivity tensor is highly anisotropic. In the case of a toroidal velocity distribution of photoelectrons, the possibility of amplification of a weak high-frequency field polarized at a sufficiently large angle to the anisotropy axis of the initial nonequilibrium distribution is revealed.

  19. Cooking Appliances Using High-Frequency Heating

    OpenAIRE

    木村, 秀行; Hideyuki, KIMURA; (株)日立製作所機械研究所

    2007-01-01

    We have produced a guide suitable for people with no technical knowledge of cooking appliances that use high-frequency heating. In general, cooking appliances that use an electric heat source are popular since, they are simple to use because the offer easy heat control, are safe because they do not have naked flames, and do not make kitchens dirty because there is no exhaust. In recent years, high-efficiency cooking appliances using high-frequency heating technology have surged in popularity....

  20. High frequency oscillations in brain hemodynamic response

    Science.gov (United States)

    Akin, Ata; Bolay, Hayrunnisa

    2007-07-01

    Tight autoregulation of vessel tone guarantees proper delivery of nutrients to the tissues. This regulation is maintained at a more delicate level in the brain since any decrease in the supply of glucose and oxygen to neuronal tissues might lead to unrecoverable injury. Functional near infrared spectroscopy has been proposed as a new tool to monitor the cerebrovascular response during cognitive activity. We have observed that during a Stroop task three distinct oscillatory patterns govern the control of the cerebrovascular reactivity: very low frequency (0.02-0.05 Hz), low frequency (0.08-0.12 Hz) and high frequency (0.12-0.18 Hz). High frequency oscillations have been shown to be related to stress level of the subjects. Our findings indicate that as the stress level is increased so does the energy of the high frequency component indicating a higher stimulation from the autonomic nervous system.

  1. Control-focused, nonlinear and time-varying modelling of dielectric elastomer actuators with frequency response analysis

    International Nuclear Information System (INIS)

    Jacobs, William R; Dodd, Tony J; Anderson, Sean R; Wilson, Emma D; Porrill, John; Assaf, Tareq; Rossiter, Jonathan

    2015-01-01

    Current models of dielectric elastomer actuators (DEAs) are mostly constrained to first principal descriptions that are not well suited to the application of control design due to their computational complexity. In this work we describe an integrated framework for the identification of control focused, data driven and time-varying DEA models that allow advanced analysis of nonlinear system dynamics in the frequency-domain. Experimentally generated input–output data (voltage-displacement) was used to identify control-focused, nonlinear and time-varying dynamic models of a set of film-type DEAs. The model description used was the nonlinear autoregressive with exogenous input structure. Frequency response analysis of the DEA dynamics was performed using generalized frequency response functions, providing insight and a comparison into the time-varying dynamics across a set of DEA actuators. The results demonstrated that models identified within the presented framework provide a compact and accurate description of the system dynamics. The frequency response analysis revealed variation in the time-varying dynamic behaviour of DEAs fabricated to the same specifications. These results suggest that the modelling and analysis framework presented here is a potentially useful tool for future work in guiding DEA actuator design and fabrication for application domains such as soft robotics. (paper)

  2. 75 FR 81284 - Nationwide Use of High Frequency and Ultra High Frequency Active SONAR Technology; Draft...

    Science.gov (United States)

    2010-12-27

    ... Frequency and Ultra High Frequency Active SONAR Technology; Draft Programmatic Environmental Assessment and... Programmatic Environmental Assessment (PEA) for the Nationwide Use of High Frequency (HF) and Ultra High... potential impacts of each alternative on the human and natural environments. DATES: Comments and related...

  3. High frequency dynamics in centrifugal compressors

    NARCIS (Netherlands)

    Twerda, A.; Meulendijks, D.; Smeulers, J.P.M.; Handel, R. van den; Lier, L.J. van

    2008-01-01

    Problems with centrifugal compressors relating to high frequency, i.e. Blade passing frequency (BPF) are increasing. Pulsations and vibrations generated in centrifugal compressors can lead to nuisance, due to strong tonal noise, and even breakdown. In several cases the root cause of a failure or a

  4. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    Science.gov (United States)

    Williamson, James M.; Trump, Darryl D.; Bletzinger, Peter; Ganguly, Biswa N.

    2006-10-01

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s-1. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ~3 × 1015 cm-3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ~8.5 × 1015 cm-3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

  5. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, James M [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Trump, Darryl D [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Bletzinger, Peter [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Ganguly, Biswa N [Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433-7919 (United States)

    2006-10-21

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s{sup -1}. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of {approx}3 x 10{sup 15} cm{sup -3} at 25 W. The maximum ozone production achieved by short-pulse excitation was {approx}8.5 x 10{sup 15} cm{sup -3} at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

  6. Vapor Phase Polymerization Deposition Conducting Polymer Nanocomposites on Porous Dielectric Surface as High Performance Electrode Materials

    Institute of Scientific and Technical Information of China (English)

    Ya jie Yang; Luning Zhang; Shibin Li; Zhiming Wang; Jianhua Xu; Wenyao Yang; Yadong Jiang

    2013-01-01

    We report chemical vapor phase polymerization(VPP) deposition of poly(3,4-ethylenedioxythiophene)(PEDOT) and PEDOT/graphene on porous dielectric tantalum pentoxide(Ta2O5) surface as cathode films for solid tantalum electrolyte capacitors. The modified oxidant/oxidant-graphene films were first deposited on Ta2O5 by dip-coating, and VPP process was subsequently utilized to transfer oxidant/oxidant-graphene into PEDOT/PEDOT-graphene films. The SEM images showed PEDOT/PEDOT-graphene films was successfully constructed on porous Ta2O5 surface through VPP deposition, and a solid tantalum electrolyte capacitor with conducting polymer-graphene nano-composites as cathode films was constructed. The high conductivity nature of PEDOT-graphene leads to resistance decrease of cathode films and lower contact resistance between PEDOT/graphene and carbon paste. This nano-composite cathode films based capacitor showed ultralow equivalent series resistance(ESR) ca. 12 m? and exhibited excellent capacitance-frequency performance, which can keep 82% of initial capacitance at 500 KHz. The investigation on leakage current revealed that the device encapsulation process has no influence on capacitor leakage current, indicating the excellent mechanical strength of PEDOT/PEDOT-gaphene films. This high conductivity and mechanical strength of graphene-based polymer films shows promising future for electrode materials such as capacitors, organic solar cells and electrochemical energy storage devices.

  7. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    International Nuclear Information System (INIS)

    Williamson, James M; Trump, Darryl D; Bletzinger, Peter; Ganguly, Biswa N

    2006-01-01

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s -1 . The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ∼3 x 10 15 cm -3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ∼8.5 x 10 15 cm -3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level

  8. On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yanhui, E-mail: huangy12@rpi.edu; Schadler, Linda S. [Department of Material Science and Engineering, Rensselaer Polytechnic Institute, 110 8th street, Troy, New York 12180 (United States)

    2016-08-07

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  9. Muscle-like high-stress dielectric elastomer actuators with oil capsules

    International Nuclear Information System (INIS)

    La, Thanh-Giang; Lau, Gih-Keong; Shiau, Li-Lynn; Wei-Yee Tan, Adrian

    2014-01-01

    Despite being capable of generating large strains, dielectric elastomer actuators (DEAs) are short of strength. Often, they cannot produce enough stress or as much work as that achievable by human elbow muscles. Their maximum actuation capacity is limited by the electrical breakdown of dielectric elastomers. Often, failures of these soft actuators are pre-mature and localized at the weakest spot under high field and high stress. Localized breakdowns, such as electrical arcing, thermal runaway and punctures, could spread to ultimately cause rupture if they were not stopped. This work shows that dielectric oil immersion and self-clearable electrodes nibbed the buds of localized breakdowns from DEAs. Dielectric oil encapsulation in soft-membrane capsules was found to help the DEA sustain an ultra-high electrical breakdown field of 835 MVm −1 , which is 46% higher than the electrical breakdown strength of the dry DEA in air at 570 MV m −1 . Because of the increased apparent dielectric strength, this oil-capsuled DEA realizes a higher maximum isotonic work density of up to 31.51Jkg −1 , which is 43.8% higher than that realized by the DEA in air. Meanwhile, it produces higher maximum isometric stress of up to 1.05 MPa, which is 75% higher than that produced by the DEA in air. Such improved actuator performances are comparable to those achieved by human flexor muscles, which can exert up to 1.2 MPa during elbow flexion. This muscle-like, high-stress dielectric elastomeric actuation is very promising to drive future human-like robots. (paper)

  10. Overview of the Advanced High Frequency Branch

    Science.gov (United States)

    Miranda, Felix A.

    2015-01-01

    This presentation provides an overview of the competencies, selected areas of research and technology development activities, and current external collaborative efforts of the NASA Glenn Research Center's Advanced High Frequency Branch.

  11. Nanostructures for Very High Frequency Electronics

    National Research Council Canada - National Science Library

    Gelmont, Boris

    2002-01-01

    The study of a new class of mesoscopic high frequency semi-conductor devices based on resonant tunneling in staggered-bandgap heterostructures with III-V semi-conductor ternary alloys such as AlGaSb...

  12. High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

    Science.gov (United States)

    Yu, Byoung-Soo; Ha, Tae-Jun

    2018-04-01

    The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

  13. High frequency system project implementation plan

    International Nuclear Information System (INIS)

    Moon, L.L.

    1976-01-01

    The High Frequency System is a new mobile, digital diagnostic recording system for use at the Nevada Test Site. Many different kinds of event data will be digitized in real-time by this system, and these data will be recorded and stored for later read-out and transmission to NADCEN. The hardware and software requirements of the High Frequency System are examined, and the parameters of the system are proposed

  14. Dielectric spectroscopy in aqueous solutions of paracetamol over the frequency range of 20 Hz to 2 MHz at 293.15 K temperature

    Science.gov (United States)

    Pandit, T. R.; Rana, V. A.

    2018-05-01

    Frequency domain dielectric relaxation spectroscopy plays an important role in the study of pharmaceutical drug molecules. The complex relative dielectric permittivity ɛ*(ω) = ɛ' - j ɛ" of aqueous solutions of paracetamol in the frequency range of 20 Hz to 2 MHz at a temperature range of 293.15 K are measured with the help of Agilent precision LCR meter E4980A along with four terminal liquid test fixture Agilent 16452A. Data of complex relative permittivity are used to calculate loss tangent for all concentrations of paracetamol in distilled water. Electrode polarization relaxation time has been calculated for all solutions. Effect of variation of concentrations of paracetamol in distilled water on these dielectric parameters is discussed.

  15. Novel Arrangements for High Performance and Durable Dielectric Elastomer Actuation

    Directory of Open Access Journals (Sweden)

    Runan Zhang

    2016-07-01

    Full Text Available This paper advances the design of Rod Pre-strained Dielectric Elastomer Actuators (RP-DEAs in their capability to generate comparatively large static actuation forces with increased lifetime via optimized electrode arrangements. RP-DEAs utilize thin stiff rods to constrain the expansion of the elastomer and maintain the in-plane pre-strain in the rod longitudinal direction. The aim is to study both the force output and the durability of the RP-DEA. Initial design of the RP-DEA had poor durability, however, it generated significantly larger force compared with the conventional DEA due to the effects of pre-strain and rod constraints. The durability study identifies the in-electro-active-region (in-AR lead contact and the non-uniform deformation of the structure as causes of pre-mature failure of the RP-DEA. An optimized AR configuration is proposed to avoid actuating undesired areas in the structure. The results show that with the optimized AR, the RP-DEA can be effectively stabilized and survive operation at least four times longer than with a conventional electrode arrangement. Finally, a Finite Element simulation was also performed to demonstrate that such AR design and optimization can be guided by analyzing the DEA structure in the state of pre-activation.

  16. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  17. Manipulation of dielectric Rayleigh particles using highly focused elliptically polarized vector fields.

    Science.gov (United States)

    Gu, Bing; Xu, Danfeng; Rui, Guanghao; Lian, Meng; Cui, Yiping; Zhan, Qiwen

    2015-09-20

    Generation of vectorial optical fields with arbitrary polarization distribution is of great interest in areas where exotic optical fields are desired. In this work, we experimentally demonstrate the versatile generation of linearly polarized vector fields, elliptically polarized vector fields, and circularly polarized vortex beams through introducing attenuators in a common-path interferometer. By means of Richards-Wolf vectorial diffraction method, the characteristics of the highly focused elliptically polarized vector fields are studied. The optical force and torque on a dielectric Rayleigh particle produced by these tightly focused vector fields are calculated and exploited for the stable trapping of dielectric Rayleigh particles. It is shown that the additional degree of freedom provided by the elliptically polarized vector field allows one to control the spatial structure of polarization, to engineer the focusing field, and to tailor the optical force and torque on a dielectric Rayleigh particle.

  18. Do dielectric nanostructures turn metallic in high-electric dc fields?

    Science.gov (United States)

    Silaeva, E P; Arnoldi, L; Karahka, M L; Deconihout, B; Menand, A; Kreuzer, H J; Vella, A

    2014-11-12

    Three-dimensional dielectric nanostructures have been analyzed using field ion microscopy (FIM) to study the electric dc field penetration inside these structures. The field is proved to be screened within a few nanometers as theoretically calculated taking into account the high-field impact ionization process. Moreover, the strong dc field of the order of 0.1 V/Å at the surface inside a dielectric nanostructure modifies its band structure leading to a strong band gap shrinkage and thus to a strong metal-like optical absorption near the surface. This metal-like behavior was theoretically predicted using first-principle calculations and experimentally proved using laser-assisted atom probe tomography (APT). This work opens up interesting perspectives for the study of the performance of all field-effect nanodevices, such as nanotransistor or super capacitor, and for the understanding of the physical mechanisms of field evaporation of dielectric nanotips in APT.

  19. Structural-optical study of high-dielectric-constant oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, M.M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Luchena, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Toro, R.G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Malandrino, G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Fragala, I.L. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Nigro, R. Lo [Istituto di Microelettronica e Microsistemi, IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy)

    2006-10-31

    High-k polycrystalline Pr{sub 2}O{sub 3} and amorphous LaAlO{sub 3} oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr{sub 2}O{sub 3} films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO{sub 3} films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.

  20. Studies on frequency dependent electrical and dielectric properties of sintered zinc oxide pellets: effects of Al-doping

    Science.gov (United States)

    Tewari, S.; Ghosh, A.; Bhattacharjee, A.

    2016-11-01

    Sintered pellets of zinc oxide (ZnO), both undoped and Al-doped are prepared through a chemical process. Dopant concentration of Aluminium in ZnO [Al/Zn in weight percentage (wt%)] is varied from 0 to 3 wt%. After synthesis structural characterisation of the samples are performed with XRD and SEM-EDAX which confirm that all the samples are of ZnO having polycrystalline nature with particle size from 108.6 to 116 nm. Frequency dependent properties like a.c. conductivity, capacitance, impedance and phase angle are measured in the frequency range 10 Hz to 100 kHz as a function of temperature (in the range 25-150 °C). Nature of a.c. conductivity in these samples indicates hopping type of conduction arising from localised defect states. The frequency and temperature dependent properties under study are found to be as per correlated barrier hoping model. Dielectric and impedance properties studied in the samples indicate distributed relaxation, showing decrease of relaxation time with temperature.

  1. High frequency conductivity in carbon nanotubes

    Directory of Open Access Journals (Sweden)

    S. S. Abukari

    2012-12-01

    Full Text Available We report on theoretical analysis of high frequency conductivity in carbon nanotubes. Using the kinetic equation with constant relaxation time, an analytical expression for the complex conductivity is obtained. The real part of the complex conductivity is initially negative at zero frequency and become more negative with increasing frequency, until it reaches a resonance minimum at ω ∼ ωB for metallic zigzag CNs and ω < ωB for armchair CNs. This resonance enhancement is indicative for terahertz gain without the formation of current instabilities induced by negative dc conductivity. We noted that due to the high density of states of conduction electrons in metallic zigzag carbon nanotubes and the specific dispersion law inherent in hexagonal crystalline structure result in a uniquely high frequency conductivity than the corresponding values for metallic armchair carbon nanotubes. We suggest that this phenomenon can be used to suppress current instabilities that are normally associated with a negative dc differential conductivity.

  2. Super Dielectric Materials.

    Science.gov (United States)

    Fromille, Samuel; Phillips, Jonathan

    2014-12-22

    Evidence is provided here that a class of materials with dielectric constants greater than 10⁵ at low frequency (dielectric materials (SDM), can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 10⁸ in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 10⁴. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc. ), filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution), herein called New Paradigm Super (NPS) capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å) of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to "short" the individual water droplets. Potentially NPS capacitor stacks can surpass "supercapacitors" in volumetric energy density.

  3. Super Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Samuel Fromille

    2014-12-01

    Full Text Available Evidence is provided here that a class of materials with dielectric constants greater than 105 at low frequency (<10−2 Hz, herein called super dielectric materials (SDM, can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 108 in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 104. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc., filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution, herein called New Paradigm Super (NPS capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to “short” the individual water droplets. Potentially NPS capacitor stacks can surpass “supercapacitors” in volumetric energy density.

  4. Dielectric and photo-dielectric properties of TlGaSeS crystals

    Indian Academy of Sciences (India)

    Administrator

    cDepartment of Physics, Middle East Technical University, 06800 Ankara, Turkey. MS received ... The crystals are observed to exhibit a dark high frequency effective dielectric constant value of ~ 10\\65 x ... communication systems. Keywords.

  5. Thermosetting resins with high fractions of free volume and inherently low dielectric constants.

    Science.gov (United States)

    Lin, Liang-Kai; Hu, Chien-Chieh; Su, Wen-Chiung; Liu, Ying-Ling

    2015-08-18

    This work demonstrates a new class of thermosetting resins, based on Meldrum's acid (MA) derivatives, which have high fractions of free volume and inherently low k values of about 2.0 at 1 MHz. Thermal decomposition of the MA groups evolves CO2 and acetone to create air-trapped cavities so as to reduce the dielectric constants.

  6. Ab-initio study of the dielectric response of high-permittivity perovskites for energy storage

    International Nuclear Information System (INIS)

    Do-Amaral-De-Andrade-Sophia, Gustavo

    2014-01-01

    Many of materials based on transition metals have a wide range of applications, such as the storage of energy, due to their peculiar properties (high-dielectric constants, ferro-electricity,...). The knowledge of their bulk properties is essential in designing targeted devices with high performance. For instance, ABO 3 perovskites are peculiarly interesting for their atomic structural flexibility, allowing high number of atoms substitution and giving them specific chemical and electrical properties compared to the pure compounds. In this context, first principles calculations can be useful to understand the structural and electronic properties of these materials. The pressure-induced giant dielectric anomaly of ABO 3 perovskites has been investigated at the ab initio level. Its mechanism has been analyzed in terms of thermodynamic phase stability, structural and phonon contributions and Born effective charges. It is shown that the IR-active soft phonon is responsible for the anomaly. This mode always involves a displacement and a deformation of the oxygen octahedra, while the roles of A and B ions vary among the materials and between high- and low-pressure phase transitions. A sharp increase in the phonon amplitude near the phase transition gives rise to the dielectric anomaly. The use of hybrid functionals is required for agreement with experimental data. The calculations show that the dielectric anomaly in the pressure-induced phase transitions of these perovskites is a property of the bulk material. (author)

  7. Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

    Science.gov (United States)

    Taşçıoğlu, İ.; Tüzün Özmen, Ö.; Şağban, H. M.; Yağlıoğlu, E.; Altındal, Ş.

    2017-04-01

    In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by spin coating method. The electrical and dielectric analysis of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky barrier diode was conducted by means of capacitance-voltage ( C- V) and conductance-voltage ( G/ ω- V) measurements in the frequency range of 10 kHz-2 MHz. The C- V- f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states ( N ss). The values of N ss located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill-Coleman method. Experimental results show that dielectric constant ( ɛ') and dielectric loss ( ɛ″) decrease with increasing frequency, whereas loss tangent (tan δ) remains nearly the same. The decrease in ɛ' and ɛ″ was interpreted by the theory of dielectric relaxation due to interfacial polarization. It is also observed that ac electrical conductivity ( σ ac) and electric modulus ( M' and M″) increase with increasing frequency.

  8. Dielectric properties of agricultural products – fundamental principles, influencing factors, and measurement technirques. Chapter 4. Electrotechnologies for Food Processing: Book Series. Volume 3. Radio-Frequency Heating

    Science.gov (United States)

    In this chapter, definitions of dielectric properties, or permittivity, of materials and a brief discussion of the fundamental principles governing their behavior with respect to influencing factors are presented. The basic physics of the influence of frequency of the electric fields and temperatur...

  9. Preparation of a Carbon Doped Tissue-Mimicking Material with High Dielectric Properties for Microwave Imaging Application

    Directory of Open Access Journals (Sweden)

    Siang-Wen Lan

    2016-07-01

    Full Text Available In this paper, the oil-in-gelatin based tissue-mimicking materials (TMMs doped with carbon based materials including carbon nanotube, graphene ink or lignin were prepared. The volume percent for gelatin based mixtures and oil based mixtures were both around 50%, and the doping amounts were 2 wt %, 4 wt %, and 6 wt %. The effect of doping material and amount on the microwave dielectric properties including dielectric constant and conductivity were investigated over an ultra-wide frequency range from 2 GHz to 20 GHz. The coaxial open-ended reflection technology was used to evaluate the microwave dielectric properties. Six measured values in different locations of each sample were averaged and the standard deviations of all the measured dielectric properties, including dielectric constant and conductivity, were less than one, indicating a good uniformity of the prepared samples. Without doping, the dielectric constant was equal to 23 ± 2 approximately. Results showed with doping of carbon based materials that the dielectric constant and conductivity both increased about 5% to 20%, and the increment was dependent on the doping amount. By proper selection of doping amount of the carbon based materials, the prepared material could map the required dielectric properties of special tissues. The proposed materials were suitable for the phantom used in the microwave medical imaging system.

  10. Extremely high frequency RF effects on electronics.

    Energy Technology Data Exchange (ETDEWEB)

    Loubriel, Guillermo Manuel; Vigliano, David; Coleman, Phillip Dale; Williams, Jeffery Thomas; Wouters, Gregg A.; Bacon, Larry Donald; Mar, Alan

    2012-01-01

    The objective of this work was to understand the fundamental physics of extremely high frequency RF effects on electronics. To accomplish this objective, we produced models, conducted simulations, and performed measurements to identify the mechanisms of effects as frequency increases into the millimeter-wave regime. Our purpose was to answer the questions, 'What are the tradeoffs between coupling, transmission losses, and device responses as frequency increases?', and, 'How high in frequency do effects on electronic systems continue to occur?' Using full wave electromagnetics codes and a transmission-line/circuit code, we investigated how extremely high-frequency RF propagates on wires and printed circuit board traces. We investigated both field-to-wire coupling and direct illumination of printed circuit boards to determine the significant mechanisms for inducing currents at device terminals. We measured coupling to wires and attenuation along wires for comparison to the simulations, looking at plane-wave coupling as it launches modes onto single and multiconductor structures. We simulated the response of discrete and integrated circuit semiconductor devices to those high-frequency currents and voltages, using SGFramework, the open-source General-purpose Semiconductor Simulator (gss), and Sandia's Charon semiconductor device physics codes. This report documents our findings.

  11. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  12. High-Frequency Percussive Ventilation Revisited

    Science.gov (United States)

    2010-01-01

    be implemented. ‡ Follow the reverse of the ventilation sequence if respiratory alkalosis develops—however, start at ventilation goal sequence 1 not at...High-frequency percussive ventilation (HFPV) has demonstrated a potential role as a rescue option for refractory acute respiratory distress syndrome...frequency percussive ventilation (HFPV) has demon- strated a potential role as a salvage option for refrac- tory acute respiratory distress syndrome

  13. High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Leontis, I.; Nassiopoulou, A. G., E-mail: A.Nassiopoulou@inn.demokritos.gr [INN, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos, Aghia Paraskevi, 153 10 Athens (Greece); Botzakaki, M. A.; Georga, S. N. [Department of Physics, University of Patras, 26 504 Rion (Greece)

    2016-06-28

    High capacitance density three-dimensional (3D) metal-insulator-semiconductor (MIS) capacitors using Si nanowires (SiNWs) by metal-assisted chemical etching and atomic-layer-deposited alumina dielectric film were fabricated and electrically characterized. A chemical treatment was used to remove structural defects from the nanowire surface, in order to reduce the density of interface traps at the Al{sub 2}O{sub 3}/SiNW interface. SiNWs with two different lengths, namely, 1.3 μm and 2.4 μm, were studied. A four-fold capacitance density increase compared to a planar reference capacitor was achieved with the 1.3 μm SiNWs. In the case of the 2.4 μm SiNWs this increase was ×7, reaching a value of 4.1 μF/cm{sup 2}. Capacitance-voltage (C-V) measurements revealed that, following a two-cycle chemical treatment, frequency dispersion at accumulation regime and flat-band voltage shift disappeared in the case of the 1.3 μm SiNWs, which is indicative of effective removal of structural defects at the SiNW surface. In the case of the 2.4 μm SiNWs, frequency dispersion at accumulation persisted even after the two-step chemical treatment. This is attributed to a porous Si layer at the SiNW tops, which is not effectively removed by the chemical treatment. The electrical losses of MIS capacitors in both cases of SiNW lengths were studied and will be discussed.

  14. High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

    International Nuclear Information System (INIS)

    Leontis, I.; Nassiopoulou, A. G.; Botzakaki, M. A.; Georga, S. N.

    2016-01-01

    High capacitance density three-dimensional (3D) metal-insulator-semiconductor (MIS) capacitors using Si nanowires (SiNWs) by metal-assisted chemical etching and atomic-layer-deposited alumina dielectric film were fabricated and electrically characterized. A chemical treatment was used to remove structural defects from the nanowire surface, in order to reduce the density of interface traps at the Al_2O_3/SiNW interface. SiNWs with two different lengths, namely, 1.3 μm and 2.4 μm, were studied. A four-fold capacitance density increase compared to a planar reference capacitor was achieved with the 1.3 μm SiNWs. In the case of the 2.4 μm SiNWs this increase was ×7, reaching a value of 4.1 μF/cm"2. Capacitance-voltage (C-V) measurements revealed that, following a two-cycle chemical treatment, frequency dispersion at accumulation regime and flat-band voltage shift disappeared in the case of the 1.3 μm SiNWs, which is indicative of effective removal of structural defects at the SiNW surface. In the case of the 2.4 μm SiNWs, frequency dispersion at accumulation persisted even after the two-step chemical treatment. This is attributed to a porous Si layer at the SiNW tops, which is not effectively removed by the chemical treatment. The electrical losses of MIS capacitors in both cases of SiNW lengths were studied and will be discussed.

  15. Toward a unified description of nonlinearity and frequency dispersion of piezoelectric and dielectric responses in Pb(Zr,Ti)O3

    International Nuclear Information System (INIS)

    Damjanovic, D.; Bharadwaja, S.S.N.; Setter, N.

    2005-01-01

    A phenomenological approach is proposed describing both nonlinearity and frequency dispersion in dielectric and piezoelectric properties of lead zirconate titanate, Pb(Zr,Ti)O 3 (PZT), thin films and ceramics. The approach couples the frequency dependent response in form of the power law, 1/ω β , with the rate-independent nonlinear response described by the Rayleigh law. The main experimental trends are well described by the model

  16. Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO4 dielectric films

    International Nuclear Information System (INIS)

    Huang, C.-L.; Hsu, C.-H.

    2004-01-01

    Zirconium tin titanium oxide doped 1 wt % ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fixed rf power of 350 W with various argon-oxygen (Ar/O 2 ) mixture and different substrate temperatures. Electrical properties and microstructures of ZnO-doped (Zr 0.8 Sn 0.2 )TiO 4 thin films prepared by rf magnetron sputtering on n-type Si(100) substrates at different Ar/O 2 ratios and substrate temperatures have been investigated. The surface structural and morphological characteristics analyzed by x-ray diffraction, scanning electron microscopy, and atomic force microscope were sensitive to the deposition conditions, such as Ar/O 2 ratio (100/0-80/20) and substrate temperature (350 deg. C-450 deg. C). The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the films increased with the increase of both the Ar partial pressure and the substrate temperature. At a Ar/O 2 ratio of 100/0, rf power level of 350 W and substrate temperature of 450 deg. C, the Zr 0.8 Sn 0.2 TiO 4 films with 6.44 μm thickness possess a dielectric constant of 42 (at 10 MHz), a dissipation factor of 0.065 (at 10 MHz), and a leakage current density of 2x10 -7 A/cm 2 at an electrical field of 1 kV/cm

  17. High Frequency Traders and Market Structure

    NARCIS (Netherlands)

    Menkveld, A.J.

    2014-01-01

    The arrival of high-frequency traders (HFTs) coincided with the entry of new markets and, subsequently, strong fragmentation of the order flow. These trends might be related as new markets serve HFTs who seek low fees and high speed. New markets only thrive on competitive price quotes that

  18. Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

    Directory of Open Access Journals (Sweden)

    S. Taylor

    2012-06-01

    Full Text Available In capacitance-voltage (C-V measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value, that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon substrate and the parasitic effects. The effect of the lossy interfacial layer on frequency dispersion was investigated and modeled based on a dual frequency technique. The significance of parasitic effects (including series resistance and the back metal contact of the metal-oxide-semiconductor (MOS capacitor on frequency dispersion was also studied. The effect of surface roughness on frequency dispersion is also discussed. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Curie-von Schweidler (CS law, the Kohlrausch-Williams-Watts (KWW relationship and the Havriliak-Negami (HN relationship. Dielectric relaxation mechanisms are also discussed.

  19. Preconditioned finite-difference frequency-domain for modelling periodic dielectric structures - comparisons with FDTD

    NARCIS (Netherlands)

    Chabory, A.; Hon, de B.P.; Schilders, W.H.A.; Tijhuis, A.G.

    2008-01-01

    Finite-difference techniques are very popular and versatile numerical tools in computational electromagnetics. In this paper, we propose a preconditioned finite-difference frequency-domain method (FDFD) to model periodic structures in 2D and 3D. The preconditioner follows from a modal decoupling

  20. Preconditioned finite-difference frequency-domain for modelling periodic dielectric structures : comparisons with FDTD

    NARCIS (Netherlands)

    Chabory, A.; Hon, de B.P.; Schilders, W.H.A.; Tijhuis, A.G.

    2008-01-01

    Finite-difference techniques are very popular and versatile numerical tools in computational electromagnetics. In this paper, we propose a preconditioned finite-difference frequency-domain method (FDFD) to model periodic structures in 2D and 3D. The preconditioner follows from a modal decoupling

  1. Dielectric Wakefield Researches

    International Nuclear Information System (INIS)

    Kiselev, V.A.; Linnik, A.F.; Onishchenko, N.I.; Uskov, V.V.; Marshall, T.C.

    2006-01-01

    Excitation of wakefield in cylindrical dielectric waveguide/resonator by a sequence of relativistic electron bunches was investigated using an electron linac 'Almaz-2' (4.5 MeV, 6·10 3 bunches of duration 60 ps and charge 0.32 nC each). Energy spectrum of electrons, radial topography and longitudinal distribution of wakefield, and total energy of excited wakefield were measured by means of magnetic analyzer, high frequency probe, and a sensitive calorimeter

  2. High-frequency and microwave circuit design

    CERN Document Server

    Nelson, Charles

    2007-01-01

    An integral part of any communications system, high-frequency and microwave design stimulates major progress in the wireless world and continues to serve as a foundation for the commercial wireless products we use every day. The exceptional pace of advancement in developing these systems stipulates that engineers be well versed in multiple areas of electronics engineering. With more illustrations, examples, and worked problems, High-Frequency and Microwave Circuit Design, Second Edition provides engineers with a diverse body of knowledge they can use to meet the needs of this rapidly progressi

  3. High frequency and pulse scattering physical acoustics

    CERN Document Server

    Pierce, Allan D

    1992-01-01

    High Frequency and Pulse Scattering investigates high frequency and pulse scattering, with emphasis on the phenomenon of echoes from objects. Geometrical and catastrophe optics methods in scattering are discussed, along with the scattering of sound pulses and the ringing of target resonances. Caustics and associated diffraction catastrophes are also examined.Comprised of two chapters, this volume begins with a detailed account of geometrically based approximation methods in scattering theory, focusing on waves transmitted through fluid and elastic scatterers and glory scattering; surface ray r

  4. Kubo formula for frequency dispersion of dielectric permittivity and static conductivity of the Coulomb system

    International Nuclear Information System (INIS)

    Bobrov, V.B.; Trigger, S.A.; Zagorodny, A.G.

    2010-01-01

    It is proved that the Kubo formula for the conductivity σ(ω) is valid at real frequencies ω. On this basis, an exact relation is derived for the static conductivity σ st of the Coulomb system. It is shown that the static conductivity is determined by the time correlation function in the limit t→∞. It is proved that the permittivity ε(ω) satisfies the Kramers-Kronig relations which take into account a singularity associated with static conductivity.

  5. Study of high-k gate dielectrics by means of positron annihilation

    International Nuclear Information System (INIS)

    Uedono, A.; Naito, T.; Otsuka, T.; Ito, K.; Shiraishi, K.; Yamabe, K.; Miyazaki, S.; Watanabe, H.; Umezawa, N.; Hamid, A.; Chikyow, T.; Ohdaira, T.; Suzuki, R.; Ishibashi, S.; Inumiya, S.; Kamiyama, S.; Akasaka, Y.; Nara, Y.; Yamada, K.

    2007-01-01

    High-dielectric constant (high-k) gate materials, such as HfSiO x and HfAlO x , fabricated by atomic-layer-deposition techniques were characterized using monoenergetic positron beams. Measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons indicated that positrons annihilated from the trapped state by open volumes that exist intrinsically in amorphous structures of the films. The size distributions of the open volumes and the local atomic configurations around such volumes can be discussed using positron annihilation parameters, and they were found to correlate with the electrical properties of the films. We confirmed that the positron annihilation is useful technique to characterize the matrix structure of amorphous high-k materials, and can be used to determine process parameters for the fabrication of high-k gate dielectrics. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. HIGH-GRADIENT, HIGH-TRANSFORMER-RATIO, DIELECTRIC WAKE FIELD ACCELERATOR

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay L

    2012-04-12

    The Phase I work reported here responds to DoE'ss stated need "...to develop improved accelerator designs that can provide very high gradient (>200 MV/m for electrons...) acceleration of intense bunches of particles." Omega-P's approach to this goal is through use of a ramped train of annular electron bunches to drive a coaxial dielectric wakefield accelerator (CDWA) structure. This approach is a direct extension of the CDWA concept from acceleration in wake fields caused by a single drive bunch, to the more efficient acceleration that we predict can be realized from a tailored (or ramped) train of several drive bunches. This is possible because of a much higher transformer ratio for the latter. The CDWA structure itself has a number of unique features, including: a high accelerating gradient G, potentially with G > 1 GeV/m; continuous energy coupling from drive to test bunches without transfer structures; inherent transverse focusing forces for particles in the accelerated bunch; highly stable motion of high charge annular drive bunches; acceptable alignment tolerances for a multi-section system. What is new in the present approach is that the coaxial dielectric structure is now to be energized by-not one-but by a short train of ramped annular-shaped drive bunches moving in the outer coaxial channel of the structure. We have shown that this allows acceleration of an electron bunch traveling along the axis in the inner channel with a markedly higher transformer ratio T than for a single drive bunch. As described in this report, the structure will be a GHz-scale prototype with cm-scale transverse dimensions that is expected to confirm principles that can be applied to the design of a future THz-scale high gradient (> 500 MV/m) accelerator with mm-scale transverse dimensions. We show here a new means to significantly increase the transformer ratio T of the device, and thereby to significantly improve its suitability as a flexible and effective component in

  7. Core-satellite Ag@BaTiO3 nanoassemblies for fabrication of polymer nanocomposites with high discharged energy density, high breakdown strength and low dielectric loss.

    Science.gov (United States)

    Xie, Liyuan; Huang, Xingyi; Li, Bao-Wen; Zhi, Chunyi; Tanaka, Toshikatsu; Jiang, Pingkai

    2013-10-28

    Dielectric polymer nanocomposites with high dielectric constant have wide applications in high energy density electronic devices. The introduction of high dielectric constant ceramic nanoparticles into a polymer represents an important route to fabricate nanocomposites with high dielectric constant. However, the nanocomposites prepared by this method generally suffer from relatively low breakdown strength and high dielectric loss, which limit the further increase of energy density and energy efficiency of the nanocomposites. In this contribution, by using core-satellite structured ultra-small silver (Ag) decorated barium titanate (BT) nanoassemblies, we successfully fabricated high dielectric constant polymer nanocomposites with enhanced breakdown strength and lower dielectric loss in comparison with conventional polymer-ceramic particulate nanocomposites. The discharged energy density and energy efficiency are derived from the dielectric displacement-electric field loops of the polymer nanocomposites. It is found that, by using the core-satellite structured Ag@BT nanoassemblies as fillers, the polymer nanocomposites can not only have higher discharged energy density but also have high energy efficiency. The mechanism behind the improved electrical properties was attributed to the Coulomb blockade effect and the quantum confinement effect of the introduced ultra-small Ag nanoparticles. This study could serve as an inspiration to enhance the energy storage densities of dielectric polymer nanocomposites.

  8. Experimental Characterization of Dielectric Properties in Fluid Saturated Artificial Shales

    Directory of Open Access Journals (Sweden)

    Roman Beloborodov

    2017-01-01

    Full Text Available High dielectric contrast between water and hydrocarbons provides a useful method for distinguishing between producible layers of reservoir rocks and surrounding media. Dielectric response at high frequencies is related to the moisture content of rocks. Correlations between the dielectric permittivity and specific surface area can be used for the estimation of elastic and geomechanical properties of rocks. Knowledge of dielectric loss-factor and relaxation frequency in shales is critical for the design of techniques for effective hydrocarbon extraction and production from unconventional reservoirs. Although applicability of dielectric measurements is intriguing, the data interpretation is very challenging due to many factors influencing the dielectric response. For instance, dielectric permittivity is determined by mineralogical composition of solid fraction, volumetric content and composition of saturating fluid, rock microstructure and geometrical features of its solid components and pore space, temperature, and pressure. In this experimental study, we investigate the frequency dependent dielectric properties of artificial shale rocks prepared from silt-clay mixtures via mechanical compaction. Samples are prepared with various clay contents and pore fluids of different salinity and cation compositions. Measurements of dielectric properties are conducted in two orientations to investigate the dielectric anisotropy as the samples acquire strongly oriented microstructures during the compaction process.

  9. Dielectric spectroscopy of watermelons for quality sensing

    Science.gov (United States)

    Nelson, Stuart O.; Guo, Wen-chuan; Trabelsi, Samir; Kays, Stanley J.

    2007-07-01

    Dielectric properties of four small-sized watermelon cultivars, grown and harvested to provide a range of maturities, were measured with an open-ended coaxial-line probe and an impedance analyser over the frequency range from 10 MHz to 1.8 GHz. Probe measurements were made on the external surface of the melons and also on tissue samples from the edible internal tissue. Moisture content and soluble solids content (SSC) were measured for internal tissue samples, and SSC (sweetness) was used as the quality factor for correlation with the dielectric properties. Individual dielectric constant and loss factor correlations with SSC were low, but a high correlation was obtained between the SSC and permittivity from a complex-plane plot of dielectric constant and loss factor, each divided by SSC. However, SSC prediction from the dielectric properties by this relationship was not as high as expected (coefficient of determination about 0.4). Permittivity data (dielectric constant and loss factor) for the melons are presented graphically to show their relationships with frequency for the four melon cultivars and for external surface and internal tissue measurements. A dielectric relaxation for the external surface measurements, which may be attributable to a combination of bound water, Maxwell-Wagner, molecular cluster or ion-related effects, is also illustrated. Coefficients of determination for complex-plane plots, moisture content and SSC relationship, and penetration depth are also shown graphically. Further studies are needed for determining the practicality of sensing melon quality from their dielectric properties.

  10. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

  11. Dry friction damping couple at high frequencies

    Czech Academy of Sciences Publication Activity Database

    Půst, Ladislav; Pešek, Luděk; Košina, Jan; Radolfová, Alena

    2014-01-01

    Roč. 8, č. 1 (2014), s. 91-100 ISSN 1802-680X Institutional support: RVO:61388998 Keywords : dry friction * damping * high frequencies Subject RIV: BI - Acoustics http://www.kme.zcu.cz/acm/acm/article/view/239/265

  12. High Frequency Trading, Information, and Takeovers

    NARCIS (Netherlands)

    Humphery-Jenner, M.

    2011-01-01

    This paper (1) proposes new variables to detect informed high-frequency trading (HFT), (2) shows that HFT can help to predict takeover targets, and (3) shows that HFT in uences target announcement announcement returns. Prior literature suggests that informed trade may occur before takeovers, but has

  13. Essays on high frequency financial econometrics

    NARCIS (Netherlands)

    Yang, X.

    2015-01-01

    It has long been demonstrated that continuous-time methods are powerful tools in financial modeling. Yet only in recent years, their counterparts in empirical analysis—high frequency econometrics—began to emerge with the availability of intra-day data and relevant statistical tools. This

  14. Dielectric properties of C sub 6 sub 0 under high pressure

    CERN Document Server

    Sundqvist, B

    2002-01-01

    The dielectric properties of C sub 6 sub 0 have been measured as functions of temperature and hydrostatic pressure in the ranges 80-370 K and 0-0.8 GPa. The results show sharp anomalies at the rotational transition above 260 K and large relaxation peaks associated with the rotational 'glass transition'. From the measured frequencies of the loss peaks we calculate the energy barrier for molecular jumping between the 'pentagon' and 'hexagon' molecular orientations. The energy barrier increases by 13% GPa sup - sup 1.

  15. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  16. Dielectric spectra of proteins in conducting media

    International Nuclear Information System (INIS)

    Ruderman, G.; Xammar Oro, J.R. de

    1990-10-01

    Dielectric measurements of serum albumin and myoglobin in solutions of varying conductivities were performed. The results presented confirm that also for protein solutions, the Maxwell predictions of a threshold frequency in conducting materials holds. The threshold frequency of a serum albumin solution was experimentally determined. Attention should be recalled that, if the dielectric spectra of proteins solutions want to be measured, three distinct frequency regions are to be observed: a low frequency region, where the sample behaves like a conductor; an intermediate region centered around the threshold frequency, where the free charges partially screen the fixed ones; and a high frequency region where the sample behaves like a good dielectric. (author). 8 refs, 5 figs

  17. Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

    Directory of Open Access Journals (Sweden)

    Jiabao Sun

    2015-01-01

    Full Text Available In recent years, germanium has attracted intensive interests for its promising applications in the microelectronics industry. However, to achieve high performance Ge channel devices, several critical issues still have to be addressed. Amongst them, a high quality gate stack, that is, a low defect interface layer and a dielectric layer, is of crucial importance. In this work, we first review the existing methods of interface engineering and gate dielectric engineering and then in more detail we discuss and compare three promising approaches (i.e., plasma postoxidation, high pressure oxidation, and ozone postoxidation. It has been confirmed that these approaches all can significantly improve the overall performance of the metal-oxide-semiconductor field effect transistor (MOSFET device.

  18. Dielectric characteristics of PZT 95/5 ferroelectric ceramics at high pressures

    International Nuclear Information System (INIS)

    Spears, R.K.

    1978-01-01

    The room temperature dielectric properties of a ferroelectric ceramic having a nominal composition of 95 atomic percent lead zirconate and 5 atomic percent lead titanate (designated as PZT 95/5) with a niobium dopant were examined at high hydrostatic pressures using a tetrahedral anvil apparatus. This ceramic has practical applications as a power source in which large quantities of charge are released by dynamic (shock wave) depolarization. Numerous mathematical models of this process have been proposed; however, the use of models has been limited because of the lack of high pressure electrical properties. This study attempted to provide these data on PZT 95/5 by determining the small signal and high electric field dielectric properties at pressures over 4 GPa

  19. High Energy Density Dielectrics for Pulsed Power Applications

    National Research Council Canada - National Science Library

    Wu, Richard L; Bray, Kevin R

    2008-01-01

    This report was developed under a SBIR contract. Aluminum oxynitride (AlON) capacitors exhibit several promising characteristics for high energy density capacitor applications in extreme environments...

  20. High-k dielectrics as bioelectronic interface for field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Borstlap, D

    2007-03-15

    Ion-sensitive field-effect transistors (ISFETs) are employed as bioelectronic sensors for the cell-transistor coupling and for the detection of DNA sequences. For these applications, thermally grown SiO{sub 2} films are used as standard gate dielectric. In the first part of this dissertation, the suitability of high-k dielectrics was studied to increase the gate capacitance and hence the signal-to-noise ratio of bioelectronic ISFETs: Upon culturing primary rat neurons on the corresponding high-k dielectrics, Al{sub 2}O{sub 3}, yttria stabilised zirkonia (YSZ), DyScO{sub 3}, CeO{sub 2}, LaAlO{sub 3}, GdScO{sub 3} and LaScO{sub 3} proved to be biocompatible substrates. Comprehensive electrical and electrochemical current-voltage measurements and capacitance-voltage measurements were performed for the determination of the dielectric properties of the high-k dielectrics. In the second part of the dissertation, standard SiO{sub 2} ISFETs with lower input capacitance and high-k dielectric Al{sub 2}O{sub 3}, YSZ und DyScO{sub 3} ISFETs were comprehensively characterised and compared with each other regarding their signal-to-noise ratio, their ion sensitivity and their drift behaviour. The ion sensitivity measurements showed that the YSZ ISFETs were considerably more sensitive to K{sup +} and Na{sup +} ions than the SiO{sub 2}, Al{sub 2}O{sub 3} und DyScO{sub 3} ISFETs. In the final third part of the dissertation, bioelectronic experiments were performed with the high-k ISFETs. The shape of the signals, which were measured from HL-1 cells with YSZ ISFETs, differed considerably from the corresponding measurements with SiO{sub 2} and DyScO{sub 3} ISFETs: After the onset of the K{sup +} current, the action potentials measured with YSZ ISFETs showed a strong drift in the direction opposite to the K{sup +} current signal. First coupling experiments between HEK 293 cells, which were transfected with a K{sup +} ion channel, and YSZ ISFETs affirmed the assumption from the HL-1

  1. Improved Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

    1994-01-01

    Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

  2. Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

    International Nuclear Information System (INIS)

    Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Park, Chan Eon; Choi, Woon-Seop

    2010-01-01

    Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

  3. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  4. Evolution of Very High Frequency Power Supplies

    DEFF Research Database (Denmark)

    Knott, Arnold; Andersen, Toke Meyer; Kamby, Peter

    2013-01-01

    The ongoing demand for smaller and lighter power supplies is driving the motivation to increase the switching frequencies of power converters. Drastic increases however come along with new challenges, namely the increase of switching losses in all components. The application of power circuits used...... in radio frequency transmission equipment helps to overcome those. However those circuits were not designed to meet the same requirements as power converters. This paper summarizes the contributions in recent years in application of very high frequency (VHF) technologies in power electronics, shows results...... of the recent advances and describes the remaining challenges. The presented results include a self-oscillating gate-drive, air core inductor optimizations, an offline LED driver with a power density of 8.9 W/cm3 and a 120 MHz, 9 W DC powered LED driver with 89 % efficiency as well as a bidirectional VHF...

  5. Towards an ab initio evaluation of the wave - vector- and frequency-dependent dielectric response function for crystalline water

    Energy Technology Data Exchange (ETDEWEB)

    Zaider, M [Columbia Univ., New York, NY (USA). Radiological Research Labs.; Fry, J L; Orr, D E [Texas Univ., Arlington, TX (USA)

    1990-01-01

    We describe an ab initio calculation of the properties of energy loss by electrons in crystalline water using its dielectric response function, {epsilon}(q,{omega}), where q and {omega} are, respectively, the wave vector and frequency. The calculation was performed on a model system (cubic ice) in order to take advantage of its ordered structure (i.e. Block's theorem), but also because of evidence that liquid water in biological systems ('structured' water) contains residues with tetrahedral structure (i.e. ice) over time scales of at least 10{sup -11} s. The main features of the calculation are (a) {epsilon}(q,{omega}) is evaluated in the random phase approximation (we used the expression given by Ehrenreich and Cohen), (b) the crystal potential is expressed as a sum of water-molecule self-consistent potentials, and (c) wave functions are expanded using tight binding functions (ultimately employing a Gaussian base set). A total of seven states (bands), five occupied and two conduction, are considered. We report the band structure and the density of states of the crystal, as well as values of {epsilon}(q,{omega}) at selected values of q and {omega}. Results are compared with energy loss measurements and with absorption spectra (XPS, UPS, and VUV data). The possibility of using an empirical combination of molecular potentials as a phenomenological Hamiltonian is also examined. (author).

  6. Effect of parallel magnetic field on repetitively unipolar nanosecond pulsed dielectric barrier discharge under different pulse repetition frequencies

    Science.gov (United States)

    Liu, Yidi; Yan, Huijie; Guo, Hongfei; Fan, Zhihui; Wang, Yuying; Wu, Yun; Ren, Chunsheng

    2018-03-01

    A magnetic field, with the direction parallel to the electric field, is applied to the repetitively unipolar positive nanosecond pulsed dielectric barrier discharge. The effect of the parallel magnetic field on the plasma generated between two parallel-plate electrodes in quiescent air is experimentally studied under different pulse repetition frequencies (PRFs). It is indicated that only the current pulse in the rising front of the voltage pulse occurs, and the value of the current is increased by the parallel magnetic field under different PRFs. The discharge uniformity is improved with the decrease in PRF, and this phenomenon is also observed in the discharge with the parallel magnetic field. By using the line-ratio technique of optical emission spectra, it is found that the average electron density and electron temperature under the considered PRFs are both increased when the parallel magnetic field is applied. The incremental degree of average electron density is basically the same under the considered PRFs, while the incremental degree of electron temperature under the higher-PRFs is larger than that under the lower-PRFs. All the above phenomena are explained by the effect of parallel magnetic field on diffusion and dissipation of electrons.

  7. Pulse Power Capability Of High Energy Density Capacitors Based on a New Dielectric Material

    Science.gov (United States)

    Winsor, Paul; Scholz, Tim; Hudis, Martin; Slenes, Kirk M.

    1999-01-01

    A new dielectric composite consisting of a polymer coated onto a high-density metallized Kraft has been developed for application in high energy density pulse power capacitors. The polymer coating is custom formulated for high dielectric constant and strength with minimum dielectric losses. The composite can be wound and processed using conventional wound film capacitor manufacturing equipment. This new system has the potential to achieve 2 to 3 J/cu cm whole capacitor energy density at voltage levels above 3.0 kV, and can maintain its mechanical properties to temperatures above 150 C. The technical and manufacturing development of the composite material and fabrication into capacitors are summarized in this paper. Energy discharge testing, including capacitance and charge-discharge efficiency at normal and elevated temperatures, as well as DC life testing were performed on capacitors manufactured using this material. TPL (Albuquerque, NM) has developed the material and Aerovox (New Bedford, MA) has used the material to build and test actual capacitors. The results of the testing will focus on pulse power applications specifically those found in electro-magnetic armor and guns, high power microwave sources and defibrillators.

  8. Theoretical and Experimental Studies of New Polymer-Metal High-Dielectric Constant Nanocomposites

    Science.gov (United States)

    Ginzburg, Valeriy; Elwell, Michael; Myers, Kyle; Cieslinski, Robert; Malowinski, Sarah; Bernius, Mark

    2006-03-01

    High-dielectric-constant (high-K) gate materials are important for the needs of electronics industry. Most polymers have dielectric constant in the range 2 materials with K > 10 it is necessary to combine polymers with ceramic or metal nanoparticles. Several formulations based on functionalized Au-nanoparticles (R ˜ 5 -— 10 nm) and PMMA matrix polymer are prepared. Nanocomposite films are subsequently cast from solution. We study the morphology of those nanocomposites using theoretical (Self-Consistent Mean-Field Theory [SCMFT]) and experimental (Transmission Electron Microscopy [TEM]) techniques. Good qualitative agreement between theory and experiment is found. The study validates the utility of SCMFT as screening tool for the preparation of stable (or at least metastable) polymer/nanoparticle mixtures.

  9. Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

    International Nuclear Information System (INIS)

    Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

    2003-01-01

    Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

  10. Design and Fabrication of High Gain Multi-element Multi-segment Quarter-sector Cylindrical Dielectric Resonator Antenna

    Science.gov (United States)

    Ranjan, Pinku; Gangwar, Ravi Kumar

    2017-12-01

    A novel design and analysis of quarter cylindrical dielectric resonator antenna (q-CDRA) with multi-element and multi-segment (MEMS) approach has been presented. The MEMS q-CDRA has been designed by splitting four identical quarters from a solid cylinder and then multi-segmentation approach has been utilized to design q-CDRA. The proposed antenna has been designed for enhancement in bandwidth as well as for high gain. For bandwidth enhancement, multi-segmentation method has been explained for the selection of dielectric constant of materials. The performance of the proposed MEMS q-CDRA has been demonstrated with design guideline of MEMS approach. To validate the antenna performance, three segments q-CDRA has been fabricated and analyzed practically. The simulated results have been in good agreement with measured one. The MEMS q-CDRA has wide impedance bandwidth (|S11|≤-10 dB) of 133.8 % with monopole-like radiation pattern. The proposed MEMS q-CDRA has been operating at TM01δ mode with the measured gain of 6.65 dBi and minimum gain of 4.5 dBi in entire operating frequency band (5.1-13.7 GHz). The proposed MEMS q-CDRA may find appropriate applications in WiMAX and WLAN band.

  11. Superconductivity suppression near metal-dielectric in transition highly disordered systems

    International Nuclear Information System (INIS)

    Kuchinskij, Eh.Z.; Sadovskij, M.V.; Ehrkabaev, M.A.

    1997-01-01

    The effects of temperature suppression of superconducting transition T c within wide limits of disorders values from low-disordered to highly-disordered ones caused by formation of the Coulomb gap in the states density are studied on the bases of the earlier proposed self consistent theory on the metal-dielectric. It is shown that the proposed theory gives satisfactory description of experimental data for a number of the systems under study

  12. Flexible Ultrahigh-Temperature Polymer-Based Dielectrics with High Permittivity for Film Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Zejun Pu

    2017-11-01

    Full Text Available In this report, flexible cross-linked polyarylene ether nitrile/functionalized barium titanate(CPEN/F-BaTiO3 dielectrics films with high permittivitywere prepared and characterized. The effects of both the F-BaTiO3 and matrix curing on the mechanical, thermal and dielectric properties of the CPEN/F-BaTiO3 dielectric films were investigated in detail. Compared to pristine BaTiO3, the surface modified BaTiO3 particles effectively improved their dispersibility and interfacial adhesion in the polymer matrix. Moreover, the introduction of F-BaTiO3 particles enhanced dielectric properties of the composites, with a relatively high permittivity of 15.2 and a quite low loss tangent of 0.022 (1 kHz when particle contents of 40 wt % were utilized. In addition, the cyano (–CN groups of functional layer also can serve as potential sites for cross-linking with polyarylene ether nitrile terminated phthalonitrile (PEN-Ph matrix and make it transform from thermoplastic to thermosetting. Comparing with the pure PEN-ph film, the latter results indicated that the formation of cross-linked network in the polymer-based system resulted in increased tensile strength by ~67%, improved glass transition temperature (Tg by ~190 °C. More importantly, the CPEN/F-BaTiO3 composite films filled with 30 wt % F-BaTiO3 particles showed greater energy density by nearly 190% when compared to pure CPEN film. These findings enable broader applications of PEN-based composites in high-performance electronics and energy storage devices materials used at high temperature.

  13. High-frequency Rayleigh-wave method

    Science.gov (United States)

    Xia, J.; Miller, R.D.; Xu, Y.; Luo, Y.; Chen, C.; Liu, J.; Ivanov, J.; Zeng, C.

    2009-01-01

    High-frequency (???2 Hz) Rayleigh-wave data acquired with a multichannel recording system have been utilized to determine shear (S)-wave velocities in near-surface geophysics since the early 1980s. This overview article discusses the main research results of high-frequency surface-wave techniques achieved by research groups at the Kansas Geological Survey and China University of Geosciences in the last 15 years. The multichannel analysis of surface wave (MASW) method is a non-invasive acoustic approach to estimate near-surface S-wave velocity. The differences between MASW results and direct borehole measurements are approximately 15% or less and random. Studies show that simultaneous inversion with higher modes and the fundamental mode can increase model resolution and an investigation depth. The other important seismic property, quality factor (Q), can also be estimated with the MASW method by inverting attenuation coefficients of Rayleigh waves. An inverted model (S-wave velocity or Q) obtained using a damped least-squares method can be assessed by an optimal damping vector in a vicinity of the inverted model determined by an objective function, which is the trace of a weighted sum of model-resolution and model-covariance matrices. Current developments include modeling high-frequency Rayleigh-waves in near-surface media, which builds a foundation for shallow seismic or Rayleigh-wave inversion in the time-offset domain; imaging dispersive energy with high resolution in the frequency-velocity domain and possibly with data in an arbitrary acquisition geometry, which opens a door for 3D surface-wave techniques; and successfully separating surface-wave modes, which provides a valuable tool to perform S-wave velocity profiling with high-horizontal resolution. ?? China University of Geosciences (Wuhan) and Springer-Verlag GmbH 2009.

  14. High-Order Frequency-Locked Loops

    DEFF Research Database (Denmark)

    Golestan, Saeed; Guerrero, Josep M.; Quintero, Juan Carlos Vasquez

    2017-01-01

    In very recent years, some attempts for designing high-order frequency-locked loops (FLLs) have been made. Nevertheless, the advantages and disadvantages of these structures, particularly in comparison with a standard FLL and high-order phase-locked loops (PLLs), are rather unclear. This lack...... study, and its small-signal modeling, stability analysis, and parameter tuning are presented. Finally, to gain insight about advantages and disadvantages of high-order FLLs, a theoretical and experimental performance comparison between the designed second-order FLL and a standard FLL (first-order FLL...

  15. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  16. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  17. Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices

    Directory of Open Access Journals (Sweden)

    Masamichi Suzuki

    2012-03-01

    Full Text Available A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3 high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k materials is the thermal stability at the interface with Si, which suppresses the formation of a low-permittivity Si oxide interfacial layer. Careful selection of the film deposition conditions has enabled successful deposition of an LaAlO3 gate dielectric film with an equivalent oxide thickness (EOT of 0.31 nm. Direct contact with Si has been revealed to cause significant tensile strain to the Si in the interface region. The high stability of the effective work function with respect to the annealing conditions has been demonstrated through comparison with Hf-based dielectrics. It has also been shown that the effective work function can be tuned over a wide range by controlling the La/(La + Al atomic ratio. In addition, gate-first n-MOSFETs with ultrathin EOT that use sulfur-implanted Schottky source/drain technology have been fabricated using a low-temperature process.

  18. High Temperature, High Frequency Fuel Metering Valve, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Active Signal Technologies and its subcontractor Moog propose to develop a high-frequency actuator driven valve intended to achieve TRL 6 by the end of Phase II....

  19. 78 FR 70567 - Nationwide Use of High Frequency and Ultra High Frequency Active SONAR Technology; Final...

    Science.gov (United States)

    2013-11-26

    ... Frequency and Ultra High Frequency Active SONAR Technology; Final Programmatic Environmental Assessment and... each alternative on the human and natural environments. FOR FURTHER INFORMATION CONTACT: If you have... Programmatic Environmental Assessment The scope of the PEA focuses on potential impacts associated with the...

  20. Pulsed EM Field Response of a Thin, High-Contrast, Finely Layered Structure With Dielectric and Conductive Properties

    NARCIS (Netherlands)

    De Hoop, A.T.; Jiang, L.

    2009-01-01

    The response of a thin, high-contrast, finely layered structure with dielectric and conductive properties to an incident, pulsed, electromagnetic field is investigated theoretically. The fine layering causes the standard spatial discretization techniques to solve Maxwell's equations numerically to

  1. High temperature dielectric properties of spent adsorbent with zinc sulfate by cavity perturbation technique

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Guo [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Key Laboratory of Unconventional Metallurgy, Ministry of Education, Kunming, Yunnan 650093 (China); National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 (China); Liu, Chenhui [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Key Laboratory of Unconventional Metallurgy, Ministry of Education, Kunming, Yunnan 650093 (China); National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 (China); Faculty of Chemistry and Environment, Yunnan Minzu University, Kunming, Yunnan 650093 (China); Zhang, Libo, E-mail: libozhang77@163.com [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Key Laboratory of Unconventional Metallurgy, Ministry of Education, Kunming, Yunnan 650093 (China); National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 (China); and others

    2017-05-15

    Highlights: • Cavity perturbation technique is employed to measure the dielectric properties. • Microwave absorption capability of ZnO is poor from 20 °C to 850 °C. • Dielectric properties of spent absorbent and zinc sulfate are influenced by temperature especially in high temperature stage. • Penetration depths and heating curve indicate spent adsorbent and ZnO·2ZnSO{sub 4}, ZnSO{sub 4} are excellent microwave absorber. • The pore structures of spent adsorbent are improved significantly by microwave-regeneration directly. - Abstract: Dielectric properties of spent adsorbent with zinc sulfate are investigated by cavity perturbation technique at 2450 MHz from 20 °C to approximately 1000 °C. Two weight loss stages are observed for spent adsorbent by thermogravimetric-differential scanning calorimeter (TG-DSC) analysis, and zinc sulfate is decomposed to ZnO·2ZnSO{sub 4} and ZnO at about 750 °C and 860 °C. Microwave absorption capability of ZnSO{sub 4} increases with increasing temperature and declines after ZnO generation on account of the poor dielectric properties. Dielectric properties of spent adsorbent are dependent on apparent density and noticed an interestingly linearly relationship at room temperature. The three parameters increase gently from 20 °C to 400 °C, but a sharp increase both in real part and imaginary part are found subsequently due to the volatiles release and regeneration of carbon. And material conductivity is improved, which contributes to the π-electron conduction appearance. Relationship between penetration depth and temperature further elaborate spent adsorbent is an excellent microwave absorber and the microwave absorption capability order of zinc compounds is ZnO·2ZnSO{sub 4}, ZnSO{sub 4} and ZnO. Heating characteristics suggest that heating rate is related with dielectric properties of materials. The pore structures of spent adsorbent are improved significantly and the surface is smoother after microwave-regeneration.

  2. Optimized extraction conditions from high power-ECRIS by dedicated dielectric structures

    International Nuclear Information System (INIS)

    Schachter, L.; Dobrescu, S.; Stiebing, K.E.

    2012-01-01

    The MD-method of enhancing the ion output from ECR ion sources is well established and basically works via two mechanisms, the regenerative injection of cold electrons from an emissive dielectric layer on the plasma chamber walls and via the cutting of compensating wall currents, which results in an improved ion extraction from the plasma. As this extraction from the plasma becomes a more and more challenging issue for modern ECRIS installations with high microwave power input, a series of experiments was carried out at the 14 GHz ECRIS of the Institut fuer Kernphysik in Frankfurt/Main, Germany (IKF). In contrast to our earlier work, in these experiments emphasis was put on the second of the above mechanisms namely to influence the sheath potential at the extraction by structures with special dielectric properties. Two different types of dielectric structures, Tantalum-oxide and Aluminium oxide (the latter also being used for the MD-method) with dramatically different electrical properties were mounted on the extraction electrode of the IKF-ECRIS, facing the plasma. For both structures an increase of the extracted ion beam currents for middle and high charge states by 60-80 % was observed. The method can also be applied to other ECR ion sources for increasing the extracted ion beam performances. The paper is followed by the slides of the presentation. (authors)

  3. High-performance pentacene OTFT by incorporating Ti in LaON gate dielectric

    Science.gov (United States)

    Ma, Y. X.; Han, C. Y.; Tang, W. M.; Lai, P. T.

    2017-07-01

    Pentacene organic thin-film transistors (OTFT) using high-k LaTiON gate dielectric with different Ti contents are investigated. The LaxTi(1-x)ON films (with x = 1, 0.87, 0.76, and 0.67) are deposited by reactive sputtering followed by an annealing in N2 at 200 °C. The OTFT with La0.87Ti0.13ON can achieve a high carrier mobility of 2.6 cm2/V.s, a small threshold voltage of -1.5 V, a small sub-threshold swing of 0.07 V/dec, and a small hysteresis of 0.17 V. AFM and X-ray photoelectron spectroscopy reveal that Ti can suppress the hygroscopicity of La oxide to achieve a smoother dielectric surface, which can result in larger pentacene grains and thus higher carrier mobility. All the devices show a clockwise hysteresis because both the LaOH formation and Ti incorporation can generate acceptor-like traps in the gate dielectric.

  4. Detecting high-frequency gravitational waves with optically levitated sensors.

    Science.gov (United States)

    Arvanitaki, Asimina; Geraci, Andrew A

    2013-02-15

    We propose a tunable resonant sensor to detect gravitational waves in the frequency range of 50-300 kHz using optically trapped and cooled dielectric microspheres or microdisks. The technique we describe can exceed the sensitivity of laser-based gravitational wave observatories in this frequency range, using an instrument of only a few percent of their size. Such a device extends the search volume for gravitational wave sources above 100 kHz by 1 to 3 orders of magnitude, and could detect monochromatic gravitational radiation from the annihilation of QCD axions in the cloud they form around stellar mass black holes within our galaxy due to the superradiance effect.

  5. The dielectric properties of human pineal gland tissue and RF absorption due to wireless communication devices in the frequency range 400-1850 MHz

    International Nuclear Information System (INIS)

    Schmid, Gernot; Ueberbacher, Richard; Samaras, Theodoros; Tschabitscher, Manfred; Mazal, Peter R

    2007-01-01

    In order to enable a detailed analysis of radio frequency (RF) absorption in the human pineal gland, the dielectric properties of a sample of 20 freshly removed pineal glands were measured less than 20 h after death. Furthermore, a corresponding high resolution numerical model of the brain region surrounding the pineal gland was developed, based on a real human tissue sample. After inserting this model into a commercially available numerical head model, FDTD-based computations for exposure scenarios with generic models of handheld devices operated close to the head in the frequency range 400-1850 MHz were carried out. For typical output power values of real handheld mobile communication devices, the obtained results showed only very small amounts of absorbed RF power in the pineal gland when compared to SAR limits according to international safety standards. The highest absorption was found for the 400 MHz irradiation. In this case the RF power absorbed inside the pineal gland (organ mass 96 mg) was as low as 11 μW, when considering a device of 500 mW output power operated close to the ear. For typical mobile phone frequencies (900 MHz and 1850 MHz) and output power values (250 mW and 125 mW) the corresponding values of absorbed RF power in the pineal gland were found to be lower by a factor of 4.2 and 36, respectively. These results indicate that temperature-related biologically relevant effects on the pineal gland induced by the RF emissions of typical handheld mobile communication devices are unlikely

  6. Inverter design for high frequency power distribution

    Science.gov (United States)

    King, R. J.

    1985-01-01

    A class of simple resonantly commutated inverters are investigated for use in a high power (100 KW - 1000 KW) high frequency (10 KHz - 20 KHz) AC power distribution system. The Mapham inverter is found to provide a unique combination of large thyristor turn-off angle and good utilization factor, much better than an alternate 'current-fed' inverter. The effects of loading the Mapham inverter entirely with rectifier loads are investigated by simulation and with an experimental 3 KW 20 KHz inverter. This inverter is found to be well suited to a power system with heavy rectifier loading.

  7. Advances in Very High Frequency Power Conversion

    DEFF Research Database (Denmark)

    Kovacevic, Milovan

    Resonant and quasi-resonant converters operated at frequencies above 30 MHz have attracted special attention in the last two decades. Compared to conventional converters operated at ~100 kHz, they offer significant advantages: smaller volume and weight, lower cost, and faster transient performance....... Excellent performance and small size of magnetic components and capacitors at very high frequencies, along with constant advances in performance of power semiconductor devices, suggests a sizable shift in consumer power supplies market into this area in the near future. To operate dc-dc converter power...... method provides low complexity and low gate loss simultaneously. A direct design synthesis method is provided for resonant SEPIC converters employing this technique. Most experimental prototypes were developed using low cost, commercially available power semiconductors. Due to very fast transient...

  8. Parametric nanomechanical amplification at very high frequency.

    Science.gov (United States)

    Karabalin, R B; Feng, X L; Roukes, M L

    2009-09-01

    Parametric resonance and amplification are important in both fundamental physics and technological applications. Here we report very high frequency (VHF) parametric resonators and mechanical-domain amplifiers based on nanoelectromechanical systems (NEMS). Compound mechanical nanostructures patterned by multilayer, top-down nanofabrication are read out by a novel scheme that parametrically modulates longitudinal stress in doubly clamped beam NEMS resonators. Parametric pumping and signal amplification are demonstrated for VHF resonators up to approximately 130 MHz and provide useful enhancement of both resonance signal amplitude and quality factor. We find that Joule heating and reduced thermal conductance in these nanostructures ultimately impose an upper limit to device performance. We develop a theoretical model to account for both the parametric response and nonequilibrium thermal transport in these composite nanostructures. The results closely conform to our experimental observations, elucidate the frequency and threshold-voltage scaling in parametric VHF NEMS resonators and sensors, and establish the ultimate sensitivity limits of this approach.

  9. Dynamic characteristics of non-ideal plasmas in an external high frequency electric field

    Energy Technology Data Exchange (ETDEWEB)

    Adamyan, V M [Department of Theoretical Physics, I. I. Mechnikov Odessa National University, 65026 Odessa (Ukraine); Djuric, Z [Silvaco Data System, Silvaco Technology Centre, Compass Point, St. Ives PE27 5JL (United Kingdom); Mihajlov, A A [Institute of Physics, PO Box 57, 11001 Belgrade (Serbia and Montenegro); Sakan, N M [Institute of Physics, PO Box 57, 11001 Belgrade (Serbia and Montenegro); Tkachenko, I M [Department of Applied Mathematics, ETSII, Polytechnic University of Valencia, Camino de Vera s/n, Valencia 46022 (Spain)

    2004-07-21

    The dynamic electric conductivity, dielectric permeability and refraction and reflection coefficients of a completely ionized gaseous plasma in a high frequency (HF) external electric field are calculated. These results are obtained within the self-consistent field approach developed earlier for the static conductivity determination. The plasma electron density, N{sub e}, and temperature, T, varied within the following limits: 10{sup 19} {<=} N{sub e} {<=} 10{sup 21} cm{sup -3} and 2 x 10{sup 4} {<=} T {<=} 10{sup 6} K, respectively. The external electric field frequency, f, varied in the range 3 GHz{<=} f {<=} 0.05{omicron}{sub p}, where {omicron}{sub p} is the circular plasma frequency. Thus, the upper limit for f is either in the microwave or in the far infrared frequency band. The final results are shown in a parameterized form, suitable for laboratory applications.

  10. Dynamic characteristics of non-ideal plasmas in an external high frequency electric field

    International Nuclear Information System (INIS)

    Adamyan, V M; Djuric, Z; Mihajlov, A A; Sakan, N M; Tkachenko, I M

    2004-01-01

    The dynamic electric conductivity, dielectric permeability and refraction and reflection coefficients of a completely ionized gaseous plasma in a high frequency (HF) external electric field are calculated. These results are obtained within the self-consistent field approach developed earlier for the static conductivity determination. The plasma electron density, N e , and temperature, T, varied within the following limits: 10 19 ≤ N e ≤ 10 21 cm -3 and 2 x 10 4 ≤ T ≤ 10 6 K, respectively. The external electric field frequency, f, varied in the range 3 GHz≤ f ≤ 0.05ο p , where ο p is the circular plasma frequency. Thus, the upper limit for f is either in the microwave or in the far infrared frequency band. The final results are shown in a parameterized form, suitable for laboratory applications

  11. Recent Progress on Ferroelectric Polymer-Based Nanocomposites for High Energy Density Capacitors: Synthesis, Dielectric Properties, and Future Aspects.

    Science.gov (United States)

    Prateek; Thakur, Vijay Kumar; Gupta, Raju Kumar

    2016-04-13

    Dielectric polymer nanocomposites are rapidly emerging as novel materials for a number of advanced engineering applications. In this Review, we present a comprehensive review of the use of ferroelectric polymers, especially PVDF and PVDF-based copolymers/blends as potential components in dielectric nanocomposite materials for high energy density capacitor applications. Various parameters like dielectric constant, dielectric loss, breakdown strength, energy density, and flexibility of the polymer nanocomposites have been thoroughly investigated. Fillers with different shapes have been found to cause significant variation in the physical and electrical properties. Generally, one-dimensional and two-dimensional nanofillers with large aspect ratios provide enhanced flexibility versus zero-dimensional fillers. Surface modification of nanomaterials as well as polymers adds flavor to the dielectric properties of the resulting nanocomposites. Nowadays, three-phase nanocomposites with either combination of fillers or polymer matrix help in further improving the dielectric properties as compared to two-phase nanocomposites. Recent research has been focused on altering the dielectric properties of different materials while also maintaining their superior flexibility. Flexible polymer nanocomposites are the best candidates for application in various fields. However, certain challenges still present, which can be solved only by extensive research in this field.

  12. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  13. Assessing the high frequency behavior of non-polarizable electrodes for spectral induced polarization measurements

    Science.gov (United States)

    Abdulsamad, Feras; Florsch, Nicolas; Schmutz, Myriam; Camerlynck, Christian

    2016-12-01

    During the last decades, the usage of spectral induced polarization (SIP) measurements in hydrogeology and detecting environmental problems has been extensively increased. However, the physical mechanisms which are responsible for the induced polarization response over the usual frequency range (typically 1 mHz to 10-20 kHz) require better understanding. The phase shift observed at high frequencies is sometimes attributed to the so-called Maxwell-Wagner polarization which takes place when charges cross an interface. However, SIP measurements of tap water show a phase shift at frequencies higher than 1 kHz, where no Maxwell-Wagner polarization may occur. In this paper, we enlighten the possible origin of this phase shift and deduce its likely relationship with the types of the measuring electrodes. SIP Laboratory measurements of tap water using different types of measuring electrodes (polarizable and non-polarizable electrodes) are carried out to detect the origin of the phase shift at high frequencies and the influence of the measuring electrodes types on the observed complex resistivity. Sodium chloride is used to change the conductivity of the medium in order to quantify the solution conductivity role. The results of these measurements are clearly showing the impact of the measuring electrodes type on the measured phase spectrum while the influence on the amplitude spectrum is negligible. The phenomenon appearing on the phase spectrum at high frequency (> 1 kHz) whatever the electrode type is, the phase shows an increase compared to the theoretical response, and the discrepancy (at least in absolute value) increases with frequency, but it is less severe when medium conductivity is larger. Additionally, the frequency corner is shifted upward in frequency. The dependence of this phenomenon on the conductivity and the measuring electrodes type (electrode-electrolyte interface) seems to be due to some dielectric effects (as an electrical double layer of small

  14. Tha AGS Booster high frequency rf system

    International Nuclear Information System (INIS)

    Sanders, R.; Cameron, P.; Damn, R.

    1988-01-01

    A high level rf system, including a power amplifier and cavity has been designed for the AGS Booster. It covers a frequency range of 2.4 to 4.2 Mhz and will be used to accelerate high intensity proton, and low intensity polarized proton beams to 1.5 GeV and heavy ions to 0.35 GeV per nucleon. A total accelerating voltage of up to 90kV will be provided by two cavities, each having two gaps. The internally cross-coupled, pushpull cavities are driven by an adjacently located power amplifier. In order to accommodate the high beam intensity, up to 0.75 /times/ 10 13 protons per bunch, a low plate resistance power tetrode is used. The tube anode is magnetically coupled to one of the cavity's two paralleled cells. The amplifier is a grounded cathode configuration driven by a remotely located solid state amplifier

  15. Cultures of High-frequency Trading

    DEFF Research Database (Denmark)

    Lange, Ann-Christina; Lenglet, Marc; Seyfert, Robert

    2016-01-01

    As part of ongoing work to lay a foundation for social studies of high-frequency trading (HFT), this paper introduces the culture(s) of HFT as a sociological problem relating to knowledge and practice. HFT is often discussed as a purely technological development, where all that matters is the speed...... of allocating, processing and transmitting data. Indeed, the speed at which trades are executed and data transmitted is accelerating, and it is fair to say that algorithms are now the primary interacting agents operating in the financial markets. However, we contend that HFT is first and foremost a cultural...

  16. Pulsed-High Field/High-Frequency EPR Spectroscopy

    Science.gov (United States)

    Fuhs, Michael; Moebius, Klaus

    Pulsed high-field/high-frequency electron paramagnetic resonance (EPR) spectroscopy is used to disentangle many kinds of different effects often obscured in continuous wave (cw) EPR spectra at lower magnetic fields/microwave frequencies. While the high magnetic field increases the resolution of G tensors and of nuclear Larmor frequencies, the high frequencies allow for higher time resolution for molecular dynamics as well as for transient paramagnetic intermediates studied with time-resolved EPR. Pulsed EPR methods are used for example for relaxation-time studies, and pulsed Electron Nuclear DOuble Resonance (ENDOR) is used to resolve unresolved hyperfine structure hidden in inhomogeneous linewidths. In the present article we introduce the basic concepts and selected applications to structure and mobility studies on electron transfer systems, reaction centers of photosynthesis as well as biomimetic models. The article concludes with an introduction to stochastic EPR which makes use of an other concept for investigating resonance systems in order to increase the excitation bandwidth of pulsed EPR. The limited excitation bandwidth of pulses at high frequency is one of the main limitations which, so far, made Fourier transform methods hardly feasible.

  17. DIELECTRICALLY-LOADED WAVEGUIDE AS A MICROWAVE UNDULATOR FOR HIGH BRILLANCE X-RAYS AT 45 – 90 KeV

    Energy Technology Data Exchange (ETDEWEB)

    Kustom, R. L.; Waldschmidt, G.; Nassiri, A.

    2017-06-01

    The HEM12 mode in a cylindrical, dielectrically-loaded waveguide provides E and H fields on the central axis that are significantly higher than the fields on the conducting walls. This structure, operating near the cutoff frequency of the HEM12 mode, spans a frequency range where the wavelength and phase velocity vary significantly. This property can be exploited to generate undulator action with short periods for the generation of high brightness xrays. The frequency range of interest would be from 18 to 34.5-GHz. The goal would be to generate x-rays on the fundamental mode over a range of 45 to 90-keV.The tunability would be achieved by changing the source frequency while maintaining a constant on-axis equivalent undulator field strength of 0.5-T.

  18. Electrical and optical characteristics of dielectric-barrier discharge driven by high voltage nanosecond generator

    International Nuclear Information System (INIS)

    Ahmadeev, V.V.; Kost'yuchenko, S.V.; Kudryavtsev, N.N.; Kurkin, G.A.; Vasilyak, L.M.

    1998-01-01

    Electrical and optical characteristics of the dielectric-barrier discharge in the pressure range of 10-400 Torr were investigated experimentally, particular attention being paid to the discharge homogeneity and to the energy dissipation in the discharge volume. The discharge was driven by a high-voltage pulse generator producing nanosecond high-voltage pulses with an amplitude of 20-30 kV. Air, nitrogen, and helium were used as working gases. The discharge was found to be homogeneous within a wide range of gas pressure. A power density of up to 250 mW/cm 3 has been achieved. (J.U.)

  19. A High-Voltage Class D Audio Amplifier for Dielectric Elastomer Transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Dielectric Elastomer (DE) transducers have emerged as a very interesting alternative to the traditional electrodynamic transducer. Lightweight, small size and high maneuverability are some of the key features of the DE transducer. An amplifier for the DE transducer suitable for audio applications...... is proposed and analyzed. The amplifier addresses the issue of a high impedance load, ensuring a linear response over the midrange region of the audio bandwidth (100 Hz – 3.5 kHz). THD+N below 0.1% are reported for the ± 300 V prototype amplifier producing a maximum of 125 Var at a peak efficiency of 95 %....

  20. Robust optimization of the laser induced damage threshold of dielectric mirrors for high power lasers.

    Science.gov (United States)

    Chorel, Marine; Lanternier, Thomas; Lavastre, Éric; Bonod, Nicolas; Bousquet, Bruno; Néauport, Jérôme

    2018-04-30

    We report on a numerical optimization of the laser induced damage threshold of multi-dielectric high reflection mirrors in the sub-picosecond regime. We highlight the interplay between the electric field distribution, refractive index and intrinsic laser induced damage threshold of the materials on the overall laser induced damage threshold (LIDT) of the multilayer. We describe an optimization method of the multilayer that minimizes the field enhancement in high refractive index materials while preserving a near perfect reflectivity. This method yields a significant improvement of the damage resistance since a maximum increase of 40% can be achieved on the overall LIDT of the multilayer.

  1. Dielectrically-Loaded Cylindrical Resonator-Based Wireless Passive High-Temperature Sensor

    Directory of Open Access Journals (Sweden)

    Jijun Xiong

    2016-12-01

    Full Text Available The temperature sensor presented in this paper is based on a microwave dielectric resonator, which uses alumina ceramic as a substrate to survive in harsh environments. The resonant frequency of the resonator is determined by the relative permittivity of the alumina ceramic, which monotonically changes with temperature. A rectangular aperture etched on the surface of the resonator works as both an incentive and a coupling device. A broadband slot antenna fed by a coplanar waveguide is utilized as an interrogation antenna to wirelessly detect the sensor signal using a radio-frequency backscattering technique. Theoretical analysis, software simulation, and experiments verified the feasibility of this temperature-sensing system. The sensor was tested in a metal-enclosed environment, which severely interferes with the extraction of the sensor signal. Therefore, frequency-domain compensation was introduced to filter the background noise and improve the signal-to-noise ratio of the sensor signal. The extracted peak frequency was found to monotonically shift from 2.441 to 2.291 GHz when the temperature was varied from 27 to 800 °C, leading to an average absolute sensitivity of 0.19 MHz/°C.

  2. The JET high frequency pellet injector project

    International Nuclear Information System (INIS)

    Geraud, Alain; Dentan, M.; Whitehead, A.; Butcher, P.; Communal, D.; Faisse, F.; Gedney, J.; Gros, G.; Guillaume, D.; Hackett, L.; Hennion, V.; Homfray, D.; Lucock, R.; McKivitt, J.; Sibbald, M.; Portafaix, C.; Perin, J.P.; Reade, M.; Sands, D.; Saille, A.

    2007-01-01

    A new deuterium ice pellet injector is in preparation for JET. It is designed to inject both small pellets (variable volume within 1-2 mm 3 ) at high frequency (up to 60 Hz) for ELM mitigation experiments and large pellets (volume within 35-70 mm 3 ) at moderate frequency (up to 15 Hz) for plasma fuelling. It is based on the screw extruder technology developed by PELIN and pneumatic acceleration. An injection line will connect the injector to the flight tubes already in place to convey the pellets toward the plasma either from the low field side or from the high field side of the torus. This injection line enables: (i) the pumping of the propellant gas, (ii) the provision of the vacuum interface with the torus and (iii) the selection of the flight tube to be used via a fast selector. All the interfaces have been designed and a prototype injector is being built, to demonstrate that the required performance is achievable

  3. 500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

    Science.gov (United States)

    Chen, Liang-yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

    2016-01-01

    High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

  4. High Tc superconductors at microwave frequencies

    International Nuclear Information System (INIS)

    Gruener, G.

    1991-01-01

    The author discusses various experiments conducted in the micro- and millimeter wave spectral range on thin film and single crystal specimens of the high temperature oxide superconductors. For high quality film the surface resistance R s is, except at low temperatures, due to thermally excited carriers, with extrinsic effects playing only a secondary role. Because of the low loss various passive microwave components, such as resonators, delay lines and filters, with performance far superior to those made of normal metals can be fabricated. The conductivity measured at millimeter wave frequencies displays a peak below T c . Whether this is due to coherence factors or due to the change of the relaxation rate when the materials enter the superconducting state remains to be seen

  5. High-frequency behavior of magnetic composites

    International Nuclear Information System (INIS)

    Lagarkov, Andrey N.; Rozanov, Konstantin N.

    2009-01-01

    The paper reviews recent progress in the field of microwave magnetic properties of composites. The problem under discussion is developing composites with high microwave permeability that are needed in many applications. The theory of magnetic composites is briefly sketched with the attention paid to the laws governing the magnetic frequency dispersion in magnetic materials and basic mixing rules for composites. Recent experimental reports on the microwave performance of magnetic composites, as well as data on the agreement of the mixing rules with the measured permeability of composites that are available from the literature are discussed. From the data, a conclusion is made that the validity of a mixing rule is determined by the permeability contrast in the composite, i.e., the difference between permeability of inclusions and that of the host matrix. When the contrast is low, the Maxwell Garnet mixing rule is frequently valid. When the contrast is high, which is of the most interest for obtaining high microwave permeability of a composite, no conventionally accepted theory is capable of accurately predicting the permeability of the composites. Therefore, the mixing rules do not allow the microwave properties of magnetic composites to be predicted when the permeability of inclusions is high, that is the case of the most interest. Because of that, general limitations to the microwave performance of composites are of importance. In particular, an important relation constraining the microwave permeability of composites follows from Kittel's theory of ferromagnetic resonance and analytical properties of frequency dependence of permeability. Another constraint concerning the bandwidth of electromagnetic wave absorbers follows from the Kramers-Kronig relations for the reflection coefficient. The constraints are of importance in design and analysis of electromagnetic wave absorbers and other devices that employ the microwave magnetic properties of composites, such as

  6. The color dielectric model of QCD

    International Nuclear Information System (INIS)

    Pirner, H.-J.; Massachusetts Inst. of Tech., Cambridge, MA; Massachusetts Inst. of Tech., Cambridge, MA

    1992-01-01

    This paper demonstrates the emergence of valence gluons and their bound states, the glueballs from perturbative quantum chromodynamics (QCD). We discuss the phenomenological constraints and theoretical method needed to generate effective glueballs actions. We show how color dielectric confinement works naively and in the lattice model of color dielectrics. This lattice model is derived for SU(2) color by a blockspinning Monte Carlo renormalization group procedure. We interpret the resulting long-distance as a strongly interacting lattice string theory where the valence link gluon fields randomize in the color dielectric background which mimics the integrated out high-frequency gluon modes in the vacuum. The fluctuations of the color dielectric fields are related to color neutral glueballs modes. We give the extension of this color dielectric SU(2) theory for general SU(N) with quarks and address the problems associated with combining confinement and chiral symmetry breaking. Finally we prove the efficiency of the effective theory in applications to the heavy quark system, the the baryon, to the nucleon-nucleon interaction, to baryon models and the gluon plasma transition. In all those cases the behavior of the higher energy gluons can be monitored via the color dielectric fields. An increase in the energy density from ''deconfining'' the higher frequency modes inside the flux tube or in thermally excited matter shows up as an increase in the value of the color dielectric field and its associated energy density. (Author)

  7. High temperature dielectric and ferroelectric properties of La-modified PbTiO3 nanoceramics

    International Nuclear Information System (INIS)

    Shukla, Archana; Shukla, Namrata; Choudhary, R.N.P.

    2016-01-01

    Ferroelectric materials with high Curie temperature (higher than 300 °C) are highly desirable to construct transducers for high-temperature piezoelectric applications. Among the ferroelectric materials, PbTiO 3 (PT) is considered to be one of the most promising materials. However, the fabrication of high density pure PT ceramics is very difficult because of the highly anisotropy, which limited the use in piezoelectric transducers. Usually, substitutions towards A or B-site of PT may reduce the high anisotropy. The present work reports the experimental investigations on the effect of lanthanum (La 3+ ) substitution on the structural, dielectric and piezoelectric properties of lead titanate (PT) ceramic at high-temperature (RT ∼ 600°C)

  8. Device for detecting imminent failure of high-dielectric stress capacitors. [Patent application

    Science.gov (United States)

    McDuff, G.G.

    1980-11-05

    A device is described for detecting imminent failure of a high-dielectric stress capacitor utilizing circuitry for detecting pulse width variations and pulse magnitude variations. Inexpensive microprocessor circuitry is utilized to make numerical calculations of digital data supplied by detection circuitry for comparison of pulse width data and magnitude data to determine if preselected ranges have been exceeded, thereby indicating imminent failure of a capacitor. Detection circuitry may be incorporated in transmission lines, pulse power circuitry, including laser pulse circuitry or any circuitry where capacitors or capacitor banks are utilized.

  9. Electron, ion and atomic beams interaction with solid high-molecular dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Milyavskij, V V; Skvortsov, V A [Russian Academy of Sciences, Moscow (Russian Federation). High Energy Density Research Center

    1997-12-31

    A mathematical model was constructed and numerical investigation performed of the interaction between intense electron, ion and atomic beams and solid high-molecular dielectrics under various boundary conditions. The model is based on equations of the mechanics of continuum, electrodynamics and kinetics, describing the accumulation and relaxation of space charge and shock-wave processes, as well as the evolution of electric field in the sample. A semi-empirical procedure is proposed for the calculation of energy deposition by electron beam in a target in the presence of a non-uniform electric field. (author). 4 figs., 2 refs.

  10. High dielectric constant observed in (1 − x)Ba(Zr0.07Ti0.93)O3–xBa(Fe0.5Nb0.5)O3 binary solid-solution

    International Nuclear Information System (INIS)

    Kruea-In, Chatchai; Eitssayeam, Sukum; Pengpat, Kamonpan; Rujijanagul, Gobwute

    2012-01-01

    Binary solid-solutions of the (1 − x)Ba(Zr 0.07 Ti 0.93 )O 3 –xBa(Fe 0.5 Nb 0.5 O 3 ) system, with 0.1 ≤ x ≤ 0.9,were fabricated via a solid-state processing technique. X-ray diffraction analysis revealed that all samples exhibited a single perovskite phase. The BaFe 0.5 Nb 0.5 O 3 also promoted densification and grain growth of the system. Dielectric measurements showed that all samples displayed a relaxor like behavior. The x = 0.1 sample presented a dielectric-frequency and temperature with low loss tangent ( 0.2 samples, the dielectric data showed a broad dielectric constant–temperature curve with a giant dielectric characteristic. In addition, a high dielectric constant > 50,000 (at 10 kHz and temperature > 150 °C) was observed for the x = 0.9 sample.

  11. High-efficiency removal of NOx using dielectric barrier discharge nonthermal plasma with water as an outer electrode

    Science.gov (United States)

    Dan, ZHAO; Feng, YU; Amin, ZHOU; Cunhua, MA; Bin, DAI

    2018-01-01

    With the rapid increase in the number of cars and the development of industry, nitrogen oxide (NOx) emissions have become a serious and pressing problem. This work reports on the development of a water-cooled dielectric barrier discharge reactor for gaseous NOx removal at low temperature. The characteristics of the reactor are evaluated with and without packing of the reaction tube with 2 mm diameter dielectric beads composed of glass, ZnO, MnO2, ZrO2, or Fe2O3. It is found that the use of a water-cooled tube reduces the temperature, which stabilizes the reaction, and provides a much greater NO conversion efficiency (28.8%) than that obtained using quartz tube (14.1%) at a frequency of 8 kHz with an input voltage of 6.8 kV. Furthermore, under equivalent conditions, packing the reactor tube with glass beads greatly increases the NO conversion efficiency to 95.85%. This is because the dielectric beads alter the distribution of the electric field due to the influence of polarization at the glass bead surfaces, which ultimately enhances the plasma discharge intensity. The presence of the dielectric beads increases the gas residence time within the reactor. Experimental verification and a theoretical basis are provided for the industrial application of the proposed plasma NO removal process employing dielectric bead packing.

  12. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  13. Atmospheric and Fog Effects on Ultra-Wide Band Radar Operating at Extremely High Frequencies.

    Science.gov (United States)

    Balal, Nezah; Pinhasi, Gad A; Pinhasi, Yosef

    2016-05-23

    The wide band at extremely high frequencies (EHF) above 30 GHz is applicable for high resolution directive radars, resolving the lack of free frequency bands within the lower part of the electromagnetic spectrum. Utilization of ultra-wideband signals in this EHF band is of interest, since it covers a relatively large spectrum, which is free of users, resulting in better resolution in both the longitudinal and transverse dimensions. Noting that frequencies in the millimeter band are subjected to high atmospheric attenuation and dispersion effects, a study of the degradation in the accuracy and resolution is presented. The fact that solid-state millimeter and sub-millimeter radiation sources are producing low power, the method of continuous-wave wideband frequency modulation becomes the natural technique for remote sensing and detection. Millimeter wave radars are used as complementary sensors for the detection of small radar cross-section objects under bad weather conditions, when small objects cannot be seen by optical cameras and infrared detectors. Theoretical analysis for the propagation of a wide "chirped" Frequency-Modulated Continuous-Wave (FMCW) radar signal in a dielectric medium is presented. It is shown that the frequency-dependent (complex) refractivity of the atmospheric medium causes distortions in the phase of the reflected signal, introducing noticeable errors in the longitudinal distance estimations, and at some frequencies may also degrade the resolution.

  14. High-directivity planar antenna using controllable photonic bandgap material at microwave frequencies

    International Nuclear Information System (INIS)

    de Lustrac, A.; Gadot, F.; Akmansoy, E.; Brillat, T.

    2001-01-01

    In this letter, we experimentally demonstrate the capability of a controllable photonic bandgap (CPBG) material to conform the emitted radiation of a planar antenna at 12 GHz. The CPBG material is a variable conductance lattice fabricated with high-frequency PIN diodes soldered along metallic stripes on dielectric printed boards. Depending on the diode bias, the emitted radiation of the antenna can be either transmitted or totally reflected by the material. In the transmission state, the antenna radiation is spatially filtered by the CPBG material in a sharp beam perpendicular to the surface of the material. [copyright] 2001 American Institute of Physics

  15. Towards the accurate electronic structure descriptions of typical high-constant dielectrics

    Science.gov (United States)

    Jiang, Ting-Ting; Sun, Qing-Qing; Li, Ye; Guo, Jiao-Jiao; Zhou, Peng; Ding, Shi-Jin; Zhang, David Wei

    2011-05-01

    High-constant dielectrics have gained considerable attention due to their wide applications in advanced devices, such as gate oxides in metal-oxide-semiconductor devices and insulators in high-density metal-insulator-metal capacitors. However, the theoretical investigations of these materials cannot fulfil the requirement of experimental development, especially the requirement for the accurate description of band structures. We performed first-principles calculations based on the hybrid density functionals theory to investigate several typical high-k dielectrics such as Al2O3, HfO2, ZrSiO4, HfSiO4, La2O3 and ZrO2. The band structures of these materials are well described within the framework of hybrid density functionals theory. The band gaps of Al2O3, HfO2, ZrSiO4, HfSiO4, La2O3 and ZrO2are calculated to be 8.0 eV, 5.6 eV, 6.2 eV, 7.1 eV, 5.3 eV and 5.0 eV, respectively, which are very close to the experimental values and far more accurate than those obtained by the traditional generalized gradient approximation method.

  16. Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

    Directory of Open Access Journals (Sweden)

    Takashi Ando

    2012-03-01

    Full Text Available Current status and challenges of aggressive equivalent-oxide-thickness (EOT scaling of high-κ gate dielectrics via higher-κ ( > 20 materials and interfacial layer (IL scavenging techniques are reviewed. La-based higher-κ materials show aggressive EOT scaling (0.5–0.8 nm, but with effective workfunction (EWF values suitable only for n-type field-effect-transistor (FET. Further exploration for p-type FET-compatible higher-κ materials is needed. Meanwhile, IL scavenging is a promising approach to extend Hf-based highdielectrics to future nodes. Remote IL scavenging techniques enable EOT scaling below 0.5 nm. Mobility-EOT trends in the literature suggest that short-channel performance improvement is attainable with aggressive EOT scaling via IL scavenging or La-silicate formation. However, extreme IL scaling (e.g., zero-IL is accompanied by loss of EWF control and with severe penalty in reliability. Therefore, highly precise IL thickness control in an ultra-thin IL regime ( < 0.5 nm will be the key technology to satisfy both performance and reliability requirements for future CMOS devices.

  17. Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.

    Science.gov (United States)

    Zeng, Qingfeng; Oganov, Artem R; Lyakhov, Andriy O; Xie, Congwei; Zhang, Xiaodong; Zhang, Jin; Zhu, Qiang; Wei, Bingqing; Grigorenko, Ilya; Zhang, Litong; Cheng, Laifei

    2014-02-01

    High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures--these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

  18. Dielectrics in electric fields

    CERN Document Server

    Raju, Gorur G

    2003-01-01

    Discover nontraditional applications of dielectric studies in this exceptionally crafted field reference or text for seniors and graduate students in power engineering tracks. This text contains more than 800 display equations and discusses polarization phenomena in dielectrics, the complex dielectric constant in an alternating electric field, dielectric relaxation and interfacial polarization, the measurement of absorption and desorption currents in time domains, and high field conduction phenomena. Dielectrics in Electric Fields is an interdisciplinary reference and text for professionals and students in electrical and electronics, chemical, biochemical, and environmental engineering; physical, surface, and colloid chemistry; materials science; and chemical physics.

  19. Investigation of dielectric properties of different cake formulations during microwave and infrared-microwave combination baking.

    Science.gov (United States)

    Sakiyan, Ozge; Sumnu, Gulum; Sahin, Serpil; Meda, Venkatesh

    2007-05-01

    Dielectric properties can be used to understand the behavior of food materials during microwave processing. Dielectric properties influence the level of interaction between food and high frequency electromagnetic energy. Dielectric properties are, therefore, important in the design of foods intended for microwave preparation. In this study, it was aimed to determine the variation of dielectric properties of different cake formulations during baking in microwave and infrared-microwave combination oven. In addition, the effects of formulation and temperature on dielectric properties of cake batter were examined. Dielectric constant and loss factor of cake samples were shown to be dependent on formulation, baking time, and temperature. The increase in baking time and temperature decreased dielectric constant and loss factor of all formulations. Fat content was shown to increase dielectric constant and loss factor of cakes.

  20. Lattices of dielectric resonators

    CERN Document Server

    Trubin, Alexander

    2016-01-01

    This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the  expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas  and lattices of d...

  1. Effect of high-frequency excitation on natural frequencies of spinning discs

    DEFF Research Database (Denmark)

    Hansen, Morten Hartvig

    2000-01-01

    The effect of high-frequency, non-resonant parametric excitation on the low-frequency response of spinning discs is considered. The parametric excitation is obtained through a non-constant rotation speed, where the frequency of the pulsating overlay is much higher than the lowest natural frequenc......The effect of high-frequency, non-resonant parametric excitation on the low-frequency response of spinning discs is considered. The parametric excitation is obtained through a non-constant rotation speed, where the frequency of the pulsating overlay is much higher than the lowest natural...

  2. Characterization of dielectric materials

    Energy Technology Data Exchange (ETDEWEB)

    King, Danny J.; Babinec, Susan; Hagans, Patrick L.; Maxey, Lonnie C.; Payzant, Edward A.; Daniel, Claus; Sabau, Adrian S.; Dinwiddie, Ralph B.; Armstrong, Beth L.; Howe, Jane Y.; Wood, III, David L.; Nembhard, Nicole S.

    2017-06-27

    A system and a method for characterizing a dielectric material are provided. The system and method generally include applying an excitation signal to electrodes on opposing sides of the dielectric material to evaluate a property of the dielectric material. The method can further include measuring the capacitive impedance across the dielectric material, and determining a variation in the capacitive impedance with respect to either or both of a time domain and a frequency domain. The measured property can include pore size and surface imperfections. The method can still further include modifying a processing parameter as the dielectric material is formed in response to the detected variations in the capacitive impedance, which can correspond to a non-uniformity in the dielectric material.

  3. Effect of doping on the dielectric properties of cerium oxide in the microwave and far-infrared frequency range

    Czech Academy of Sciences Publication Activity Database

    Santha, N. I.; Sebastian, M. T.; Mohanan, P.; McN.Alford, N.; Sarma, K.; Pullar, R. C.; Kamba, Stanislav; Pashkin, Alexej; Samoukhina, Polina; Petzelt, Jan

    2004-01-01

    Roč. 87, č. 7 (2004), s. 1233-1237 ISSN 0002-7820 R&D Projects: GA ČR GA202/01/0612; GA AV ČR KSK1010104 Institutional research plan: CEZ:AV0Z1010914 Keywords : microwave cearmics * dielectric dispersion Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.710, year: 2004

  4. High-efficient light absorption of monolayer graphene via cylindrical dielectric arrays and the sensing application

    Science.gov (United States)

    Zhou, Peng; Zheng, Gaige

    2018-04-01

    The efficiency of graphene-based optoelectronic devices is typically limited by the poor absolute absorption of light. A hybrid structure of monolayer graphene with cylindrical titanium dioxide (TiO2) array and aluminum oxide (Al2O3) spacer layer on aluminum (Al) substrate has been proposed to enhance the absorption for two-dimensional (2D) materials. By combining dielectric array with metal substrate, the structure achieves multiple absorption peaks with near unity absorbance at near-infrared wavelengths due to the resonant effect of dielectric array. Completed monolayer graphene is utilized in the design without any demand of manufacture process to form the periodic patterns. Further analysis indicates that the near-field enhancement induced by surface modes gives rise to the high absorption. This favorable field enhancement and tunability of absorption not only open up new approaches to accelerate the light-graphene interaction, but also show great potential for practical applications in high-performance optoelectronic devices, such as modulators and sensors.

  5. High temperature dielectric function of silicon, germanium and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Leyer, Martin; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin (Germany). Institut fuer Festkoerperphysik

    2010-07-01

    In the last few years accurate values for the optical properties of silicon, germanium and GaN at high temperatures have become important as a reference for in-situ analysis, e.g. reflectometry. Precise temperature dependent dielectric measurements are necessary for the growth of GaInP/GaInAs/Ge triple-junction solar cells and the hetero epitaxy of GaN on silicon and sapphire. We performed spectroscopic ellipsometry (SE) measurements of the dielectric function of silicon, germanium and GaN between 1.5 eV and 6.5 eV in the temperature range from 300 K to 1300 K. The Samples were deoxidized chemically or by heating. High resolution SE spectra were taken every 50 K while cooling down to room temperature. The temperature dependence of the critical energies is compared to literature. Measurements for germanium showed a shift of the E{sub 2} critical point of {proportional_to}0.1 eV toward lower energies. The reason for this behavior is a non-negligible oxide layer on the samples in the literature.

  6. Structural and dielectric properties of barium strontium titanate produced by high temperature hydrothermal method

    International Nuclear Information System (INIS)

    Razak, K.A.; Asadov, A.; Yoo, J.; Haemmerle, E.; Gao, W.

    2008-01-01

    The preparation procedure, structural and dielectric properties of hydrothermally derived Ba x Sr 1-x TiO 3 (BST) were studied. BST with initial Ba compositions of 75, 80, 85 and 90 mol.% were prepared by a high temperature hydrothermal synthesis. The obtained powders were pressed into pellet, cold isostatically pressed and sintered at 1200 deg. C for 3 hours. The phase compositions and lattice parameters of the as prepared powders and sintered samples were analysed using X-ray diffractometry. A fitting software was used to analyse the XRD spectra to separate different phases. It was found that BST powder produced by the high temperature hydrothermal possessed a two-phase structure. This structure became more homogeneous during sintering due to interdiffusion but a small amount of minor phase can still be traced. Samples underwent an abnormal grain growth, whereby some grains grow faster than the other due to the presence of two-phase structure. The grain size increased with increasing Ba amount. Dielectric constant and polarisation increased with increasing Ba content but it was also affected by the electronic state and grain size of the compositions

  7. High frequency electromagnetic impedance measurements for characterization, monitoring and verification efforts. 1998 annual progress report

    International Nuclear Information System (INIS)

    Becker, A.; Lee, K.H.; Pellerin, L.

    1998-01-01

    'Non-invasive, high-resolution imaging of the shallow subsurface is needed for delineation of buried waste, detection of unexploded ordinance, verification and monitoring of containment structures, and other environmental applications. Electromagnetic measurements at frequencies between 1 and 100 MHz are important for such applications, because the induction number of many targets is small due, and the ability to determine the dielectric permittivity in addition to electrical conductivity of the subsurface is possible. Earlier workers were successful in developing systems for detecting anomalous areas, but no quantifiable information was accurately determined. For high resolution imaging, accurate measurements are necessary so the field data can be mapped into the space of the subsurface parameters. The authors are developing a non-invasive method for accurately imaging the electrical conductivity and dielectric permittivity of the shallow subsurface using the plane wave impedance approach, known as the magnetotelluric (MT) method at low frequencies. Electric and magnetic sensors are being tested in a known area against theoretical predictions, thereby insuring that the data collected with the high-frequency impedance (HFI) system will support high-resolution, multi-dimensional imaging techniques. The summary of the work to date is divided into three sections: equipment procurement, instrumentation, and theoretical developments. For most earth materials, the frequency range from 1 to 100 MHz encompasses a very difficult transition zone between the wave propagation of displacement currents and the diffusive behavior of conduction currents. Test equipment, such as signal generators and amplifiers, does not cover the entire range except at great expense. Hence the authors have divided the range of investigation into three sub-ranges: 1--10 MHz, 10--30 MHz, and 30--100 MHz. Results to date are in the lowest frequency range of 1--10 MHz. Even though conduction currents

  8. High frequency CARM driver for rf linacs

    International Nuclear Information System (INIS)

    Danly, B.G.

    1993-01-01

    This CARM program has successfully demonstrated the first ever long-pulse CARM oscillator operation; these results demonstrate the potential of CARMs as an alternative source of millimeter waves to the gyrotron for ECRH plasma heating. The result of 1.8 MW at 27.8 GHz and 0.5 μs pulse width in the TE 11 mode represent a clear demonstration of the capabilities of the CARM oscillator for the production of high powers with large frequency upshift. It is hoped that this successful proof-of-principle demonstration.will lead to further development of the CARM as an ECRH source by the DOE Office of Fusion Energy, Development and Technology Division. This success is a direct outcome of this support of the Advanced Energy Projects Office of DOE in the form of this program. The CARM amplifier component of the program, although unsuccessful at obtaining CARM amplifier operation at 17 GHz, has succeeded by furthering the understanding of the limitations and difficulties that lie ahead for continued CARM amplifier development. The amplifier component of the program has successfully demonstrated a high power second and third harmonic gyro-TWT amplifier. Up to 5 MW of power at 17.1 GHz and >50dB gain have been obtained. These results should be viewed as an important contribution of this program to the development of viable microwave sources for powering the next linear collider. Indeed, the present gyro-amplifier, which resulted from this program, is presently being used in ongoing high-gradient accelerator research at MIT under a DOE High Energy Physics grant. As a result of both the oscillator and amplifier advances made during this program, the CARM and harmonic gyro-TWT have reached a significantly more mature level; their future role in specific applications of benefit to DOEs OFE and HEP offices may now be pursued

  9. The AGS Booster high frequency rf system

    International Nuclear Information System (INIS)

    Sanders, R.T.; Cameron, P.; Eng, W.; Goldman, M.A.; Jablonski, E.; Kasha, D.; Keane, J.; McNerney, A.; Meth, M.; Plotkin, M.; Puglisi, M.; Ratti, A.; Spitz, R.

    1991-01-01

    A high level rf system, including a power amplifier and cavity, has been designed and built for the AGS Booster. It covers a frequency range of 2.4 to 4.2 MHz and will be used to accelerate high intensity protons. Low intensity polarized protons and heavy ions, to the 1.5 GeV level. A total accelerating voltage of up to 90 kV will be provided by two cavities, each having two gaps. The internally cross coupled, pushpull cavities are driven by an adjacently located power amplifier. In order to accommodate beam intensities up to 0.75 x 10 13 protons per bunch, a low plate resistance power tetrode is used. The tube anode is magnetically coupled to one of the cavity's two parallel cells. The amplifier is a grounded cathode configuration driven by a remotely located solid-state amplifier. It has been tested in the laboratory at full gap voltage with satisfactory results. 5 refs., 2 figs., 1 tab

  10. HIGH FREQUENCY ELECTROSTATIC INSTABILITIES IN A PLASMA

    Energy Technology Data Exchange (ETDEWEB)

    Klein, M W; Auer, P L

    1963-06-15

    The dispersion relation is examined for a collisionless infinite plasma in the presence of an anisotropic Maxwellian velocity distribution and a uniform external magnetic field. Unstable solutions exist below the muitiples of the electron cyclotron frequency provided the temperature anisotropy is sufficiently large. The dependence of the growth rate upon harmonic number, density, angle of propagation with respect to the magnetic field, and frequency is discussed for zero as well as non-zero parallel temperatures. In the latter case, the waves are strongly damped as their frequency approaches a multiple of the gyro- frequency. (auth)

  11. Frequency-dependent local field factors in dielectric liquids by a polarizable force field and molecular dynamics simulations

    International Nuclear Information System (INIS)

    Davari, Nazanin; Haghdani, Shokouh; Åstrand, Per-Olof

    2015-01-01

    A force field model for calculating local field factors, i.e. the linear response of the local electric field for example at a nucleus in a molecule with respect to an applied electric field, is discussed. It is based on a combined charge-transfer and point-dipole interaction model for the polarizability, and thereby it includes two physically distinct terms for describing electronic polarization: changes in atomic charges arising from transfer of charge between the atoms and atomic induced dipole moments. A time dependence is included both for the atomic charges and the atomic dipole moments and if they are assumed to oscillate with the same frequency as the applied electric field, a model for frequency-dependent properties are obtained. Furthermore, if a life-time of excited states are included, a model for the complex frequency-dependent polariability is obtained including also information about excited states and the absorption spectrum. We thus present a model for the frequency-dependent local field factors through the first molecular excitation energy. It is combined with molecular dynamics simulations of liquids where a large set of configurations are sampled and for which local field factors are calculated. We are normally not interested in the average of the local field factor but rather in configurations where it is as high as possible. In electrical insulation, we would like to avoid high local field factors to reduce the risk for electrical breakdown, whereas for example in surface-enhanced Raman spectroscopy, high local field factors are desired to give dramatically increased intensities

  12. Dielectric Properties of Flocculated Water-in-Oil Emulsions

    Energy Technology Data Exchange (ETDEWEB)

    Skodvin, T.

    1995-12-31

    When an offshore oil field is near completion, water occupies a large fraction of the available pore volume. Thus, in collecting the oil and gas reserves, one has to deal with a high co-production of either formation- or injected water. This doctoral thesis focuses on the effect of water-in-oil emulsions on the dielectric properties, in particular the effect of flocculation. Various dielectric models are applied to obtain methods for qualitative and quantitative characterization of the flocculated state. Permittivity and measurement of dielectric properties are discussed as a basis for the interpretation of the dielectric properties of the emulsions. Various flocculation models are presented. It is concluded that the dielectric properties of water-in-oil emulsions are strongly influenced by continuously ongoing processes in the system. Because of flocculation and sedimentation the traditional dielectric mixture models cannot satisfactorily predict the dielectric behaviour. The experimentally obtained permittivities for the emulsions can be reproduced by including flocculation in the models and treating the floc aggregates as spheroids or subsystems with dielectric properties given by the degree of flocculation. The models discussed have difficulties reproducing the complete frequency behaviour found experimentally. This is probably because the dielectric relaxation may be influenced by processes not included in the models, such as the effects of dipolar or multipolar interactions between the droplets. For further research it is recommended that rheological and dielectric measurements be combined. 227 refs., 61 figs., 16 tabs.

  13. Dielectric Properties of Flocculated Water-in-Oil Emulsions

    Energy Technology Data Exchange (ETDEWEB)

    Skodvin, T

    1996-12-31

    When an offshore oil field is near completion, water occupies a large fraction of the available pore volume. Thus, in collecting the oil and gas reserves, one has to deal with a high co-production of either formation- or injected water. This doctoral thesis focuses on the effect of water-in-oil emulsions on the dielectric properties, in particular the effect of flocculation. Various dielectric models are applied to obtain methods for qualitative and quantitative characterization of the flocculated state. Permittivity and measurement of dielectric properties are discussed as a basis for the interpretation of the dielectric properties of the emulsions. Various flocculation models are presented. It is concluded that the dielectric properties of water-in-oil emulsions are strongly influenced by continuously ongoing processes in the system. Because of flocculation and sedimentation the traditional dielectric mixture models cannot satisfactorily predict the dielectric behaviour. The experimentally obtained permittivities for the emulsions can be reproduced by including flocculation in the models and treating the floc aggregates as spheroids or subsystems with dielectric properties given by the degree of flocculation. The models discussed have difficulties reproducing the complete frequency behaviour found experimentally. This is probably because the dielectric relaxation may be influenced by processes not included in the models, such as the effects of dipolar or multipolar interactions between the droplets. For further research it is recommended that rheological and dielectric measurements be combined. 227 refs., 61 figs., 16 tabs.

  14. Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

    International Nuclear Information System (INIS)

    Sarma, R.; Saikia, D.

    2010-01-01

    We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

  15. High-frequency electro-thermal processing of secondary nonmetallic raw materials

    Directory of Open Access Journals (Sweden)

    A. V. Livshits

    2014-01-01

    Full Text Available Despite a large number of studies in industrial waste processing, this field is still a challenge. In this regard, new processing capabilities emerging from the use of high frequency (RF and microwave (MW heat equipment are a positive factor to be researched.In HF and MW processing the heating process is determined by absorption of electromagnetic wave power through the processed material. This electromagnetic wave power is transmitted by the substance atoms and spent for heating a sample, polarization, and initiation of chemical reactions. The non-conductor (dielectric and semiconductor material heat is explained by the existing effect of dielectric losses due to losses caused by the through electrical conductivity and slow processes of polarization. The dielectric losses due to electrical conductivity result from the Joule heat released when through-current flows through the dielectric.The differences in frequency radiation of HF and microwave equipment define their different technological capabilities. HF-radiation represents almost homogeneous field between the plates of a running capacitor. With multiple reflection from the chamber walls MW-radiation is randomly distributed within the chamber. Thus, radiation partly returns to the generator, thereby affecting the equipment performance capability and life time. Microwave heating is uneven. The depth of penetration into the material is much less to HF-processing. HF heating features are high penetration of radiation and uniform heating of the material. Together with pre-pressing it can afford an opportunity to join the non-standard pieces of plastic to have the larger insulating items.The fact of the selective effect on the material is positive when processing the waste. Since the tangent of angle of dielectric losses of materials such as wood is directly proportional to humidity, the heating automatically stops as wood dries. This fact was used to produce for the fuel briquettes, which were

  16. Broadband and high efficiency all-dielectric metasurfaces for wavefront steering with easily obtained phase shift

    Science.gov (United States)

    Yang, Hui; Deng, Yan

    2017-12-01

    All-dielectric metasurfaces for wavefront deflecting and optical vortex generating with broadband and high efficiency are demonstrated. The unit cell of the metasurfaces is optimized to function as a half wave-plate with high polarization conversion efficiency (94%) and transmittance (94.5%) at the telecommunication wavelength. Under such a condition, we can get rid of the complicated parameter sweep process for phase shift selecting. Hence, a phase coverage ranges from 0 to 2 π can be easily obtained by introducing the Pancharatnam-Berry phase. Metasurfaces composed of the two pre-designed super cells are demonstrated for optical beam deflecting and vortex beam generating. It is found that the metasurfaces with more phase shift sampling points (small phase shift increment) exhibit better performance. Moreover, optical vortex beams can be generated by the designed metasurfaces within a wavelength range of 200 nm. These results will provide a viable route for designing broadband and high efficiency devices related to phase modulation.

  17. New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces

    OpenAIRE

    Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku

    2006-01-01

    We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions ...

  18. Cast dielectric composite linear accelerator

    Science.gov (United States)

    Sanders, David M [Livermore, CA; Sampayan, Stephen [Manteca, CA; Slenes, Kirk [Albuquerque, NM; Stoller, H M [Albuquerque, NM

    2009-11-10

    A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

  19. Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

    2010-05-31

    The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

  20. Contact resistance measurement structures for high frequencies

    NARCIS (Netherlands)

    Roy, Deepu; Pijper, Ralf M.T.; Tiemeijer, Luuk F.; Wolters, Robertus A.M.

    2011-01-01

    Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto

  1. Full Polymer Dielectric Elastomeric Actuators (DEA Functionalised with Carbon Nanotubes and High-K Ceramics

    Directory of Open Access Journals (Sweden)

    Tilo Köckritz

    2016-09-01

    Full Text Available Dielectric elastomer actuators (DEA are special devices which have a simple working and construction principle and outstanding actuation properties. The DEAs consist of a combination of different materials for the dielectric and electrode layers. The combination of these layers causes incompatibilities in their interconnections. Dramatic differences in the mechanical properties and bad adhesion of the layers are the principal causes for the reduction of the actuation displacement and strong reduction of lifetime. Common DEAs achieve actuation displacements of 2% and a durability of some million cycles. The following investigations represent a new approach to solving the problems of common systems. The investigated DEA consists of only one basic raw polymer, which was modified according to the required demands of each layer. The basic raw polymer was modified with single-walled carbon nanotubes or high-k ceramics, for example, lead magnesium niobate-lead titanate. The development of the full polymer DEA comprised the development of materials and technologies to realise a reproducible layer composition. It was proven that the full polymer actuator worked according to the theoretical rules. The investigated system achieved actuation displacements above 20% regarding thickness, outstanding interconnections at each layer without any failures, and durability above 3 million cycles without any indication of an impending malfunction.

  2. Advanced passivation techniques for Si solar cells with highdielectric materials

    International Nuclear Information System (INIS)

    Geng, Huijuan; Lin, Tingjui; Letha, Ayra Jagadhamma; Hwang, Huey-Liang; Kyznetsov, Fedor A.; Smirnova, Tamara P.; Saraev, Andrey A.; Kaichev, Vasily V.

    2014-01-01

    Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al 2 O 3 , HfO 2 ) and their compounds H (Hf) A (Al) O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al 2 O 3 film has been found to provide negative fixed charge (−6.4 × 10 11  cm −2 ), whereas HfO 2 film provides positive fixed charge (3.2 × 10 12  cm −2 ). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with highdielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO 2 film would provide better passivation properties than that of the ALD-Al 2 O 3 film in this research work.

  3. High temperature dielectric properties of (BxNyOz thin films deposited using ion source assisted physical vapor deposition

    Directory of Open Access Journals (Sweden)

    N. Badi

    2015-12-01

    Full Text Available The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, BxNyOz dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate by using ion source assisted physical vapor deposition technique. The as-grown films were characterized by SEM, XRD, and XPS. The capacitor structures were fabricated using BxNyOz as a dielectric and titanium as metal electrodes. The elaborated devices were subjected to electrical and thermal characterization. They exhibited low electrical loss and very good stability when subjected to high temperature for a prolonged period of time.

  4. Passive multi-frequency brain imaging and hyperthermia irradiation apparatus: the use of dielectric matching materials in phantom experiments

    International Nuclear Information System (INIS)

    Gouzouasis, Ioannis; Karathanasis, Konstantinos; Karanasiou, Irene; Uzunoglu, Nikolaos

    2009-01-01

    In this paper a hybrid system able to provide focused microwave radiometry and deep brain hyperthermia is experimentally tested. The system's main module is an ellipsoidal conductive wall cavity which acts as a beam former, focusing the electromagnetic energy on the medium of interest. The system's microwave radiometry component has extensively been studied theoretically and experimentally in the past few years with promising results. In this work, further investigation concerning the improvement of the hybrid system's focusing properties is conducted. Specifically, microwave radiometry and hyperthermia experiments are performed using water phantoms surrounded by dielectric layers used as matching material to enhance detection/penetration depth and spatial resolution. The results showed that the dielectric material reduces the reflected electromagnetic energy on the air–phantom interface, resulting in improved temperature resolution and higher detection or penetration of the energy when microwave radiometry and hyperthermia are applied respectively

  5. Dielectric Response at THz Frequencies of Fe Water Complexes and Their Interaction with O3 Calculated by Density Functional Theory

    Science.gov (United States)

    2012-10-24

    geometric arrangement of the atoms in a chemical system , at the maximal peak of the energy surface separating reactants from products . In the...Sonnenberg, M. Hada, M. Ehara, K. Toyota , R. Fukuda, J. Hasegawa, M. Ishida, T. Nakajima, Y. Honda , O. Kitao, H. Nakai, T. Vreven, J. A. Montgomery... using DFT. The calculation of ground state resonance structure is for the construction of parameterized dielectric response functions for excitation

  6. High efficiency on-chip Dielectric Resonator Antennna using micromachining technology

    KAUST Repository

    Sallam, Mai O.; Serry, Mohamed; Shamim, Atif; De Raedt, Walter; Sedky, Sherif; Vandenbosch, Guy A. E.; Soliman, Ezzeldin A.

    2015-01-01

    In this paper, a novel cylindrical Dielectric Resonator Antenna (DRA) operating at 60 GHz is introduced. The antenna is fabricated using a high-resistivity silicon wafer. The DR is defined in the wafer using micromachining technology. The feeding network is located at the other side of the wafer. The proposed antenna is simulated using HFSS and the results are verified by measurements. The antenna radiation is mainly along the broadside direction. The measured gain, radiation efficiency, and bandwidth are 7 dBi, 74.65%, and 2.23 GHz respectively. The antenna is characterized by high polarization purity where the maximum cross-polarization is -15 dB. © 2015 IEEE.

  7. High efficiency on-chip Dielectric Resonator Antennna using micromachining technology

    KAUST Repository

    Sallam, Mai O.

    2015-10-26

    In this paper, a novel cylindrical Dielectric Resonator Antenna (DRA) operating at 60 GHz is introduced. The antenna is fabricated using a high-resistivity silicon wafer. The DR is defined in the wafer using micromachining technology. The feeding network is located at the other side of the wafer. The proposed antenna is simulated using HFSS and the results are verified by measurements. The antenna radiation is mainly along the broadside direction. The measured gain, radiation efficiency, and bandwidth are 7 dBi, 74.65%, and 2.23 GHz respectively. The antenna is characterized by high polarization purity where the maximum cross-polarization is -15 dB. © 2015 IEEE.

  8. High power testing oa ANL X-band dielectric-loaded accelerating structures

    International Nuclear Information System (INIS)

    Power, J. G.; Gai, W.; Jing, C.; Konecny, R.; Gold, S. H.; Kinkead, A. K.

    2002-01-01

    In the second phase of a program to develop a compact accelerator based on a dielectric-loaded accelerating structure, we have conducted high power tests on a traveling-wave and a standing-wave prototype. Indications are that the traveling-wave structure achieved an accelerating gradient of 3-5 MV/m before the input coupling window failed, while the standing wave structure was poorly matched at high power due to contamination of copper residue on its coupling window. To solve both of these problems, a new method for coupling RF into the structures has been developed. The new couplers and the rest of the modular structure are currently under construction and will be tested at the Naval Research Laboratory shortly

  9. High-frequency modulation of ion-acoustic waves.

    Science.gov (United States)

    Albright, N. W.

    1972-01-01

    A large amplitude, high-frequency electromagnetic oscillation is impressed on a nonrelativistic, collisionless plasma from an external source. The frequency is chosen to be far from the plasma frequency (in fact, lower). The resulting electron velocity distribution function strongly modifies the propagation of ion-acoustic waves parallel to the oscillating electric field. The complex frequency is calculated numerically.

  10. Integrated high voltage power supply utilizing burst mode control and its performance impact on dielectric electro active polymer actuators

    DEFF Research Database (Denmark)

    Andersen, Thomas; Rødgaard, Martin Schøler; Andersen, Michael A. E.

    Through resent years new high performing Dielectric Electro Active Polymers (DEAP) have emerged. To fully utilize the potential of DEAPs a driver with high voltage output is needed. In this paper a piezoelectric transformer based power supply for driving DEAP actuators is developed, utilizing...

  11. Infrared gas phase study on plasma-polymer interactions in high-current diffuse dielectric barrier discharge

    NARCIS (Netherlands)

    Liu, Y.; Welzel, S.; Starostin, S. A.; van de Sanden, M. C. M.; Engeln, R.; de Vries, H. W.

    2017-01-01

    A roll-to-roll high-current diffuse dielectric barrier discharge at atmospheric pressure was operated in air and Ar/N2/O2 gas mixtures. The exhaust gas from the discharge was studied using a high-resolution Fourier-transform infrared spectrometer in the range from 3000 to 750?cm-1 to unravel the

  12. Sheath impedance effects in very high frequency plasma experiments

    International Nuclear Information System (INIS)

    Schwarzenbach, W.; Howling, A.A.; Fivaz, M.; Brunner, S.; Hollenstein, C.

    1995-05-01

    The frequency dependence (13.56 MHz to 70 MHz) of the ion energy distribution at the ground electrode was measured by mass spectrometry in a symmetrical capacitive argon discharge. Reduced sheath impedance at Very High Frequency allows high levels of plasma power and substrate ion flux whilst maintaining low levels of ion energy and electrode voltage. The lower limit of ion bombardment energy is fixed by the sheath floating potential at high frequency, in contrast to low frequencies where only the rf voltage amplitude is determinant. The capacitive sheaths are thinner at high frequencies which accentuates the high frequency reduction in sheath impedance. It is argued that the frequency dependence of sheath impedance is responsible for the principal characteristics of Very High Frequency plasmas. The measurements are summarised by simple physical descriptions and compared with a Particle-In-Cell simulation. (author) figs., tabs., refs

  13. Eeonomer 200F®: A High-Performance Nanofiller for Polymer Reinforcement—Investigation of the Structure, Morphology and Dielectric Properties of Polyvinyl Alcohol/Eeonomer-200F® Nanocomposites for Embedded Capacitor Applications

    Science.gov (United States)

    Deshmukh, Kalim; Ahamed, M. Basheer; Deshmukh, Rajendra R.; Sadasivuni, Kishor Kumar; Ponnamma, Deepalekshmi; Pasha, S. K. Khadheer; AlMaadeed, Mariam Al-Ali; Polu, Anji Reddy; Chidambaram, K.

    2017-04-01

    In the present study, Eeonomer 200F® was used as a high-performance nanofiller to prepare polyvinyl alcohol (PVA)-based nanocomposite films using a simple and eco-friendly solution casting technique. The prepared PVA/Eeonomer nanocomposite films were further investigated using various techniques including Fourier transform infrared spectroscopy, x-ray diffraction, thermogravimetric analysis, polarized optical microscopy, scanning electron microscopy and mechanical testing. The dielectric behavior of the nanocomposites was examined over a broad frequency range from 50 Hz to 20 MHz and temperatures ranging from 40°C to 150°C. A notable improvement in the thermal stability of the PVA was observed with the incorporation of Eeonomer. The nanocomposites also demonstrated improved mechanical properties due to the fine dispersion of the Eeonomer, and good compatibility and strong interaction between the Eeonomer and the PVA matrix. A significant improvement was observed in the dielectric properties of the PVA upon the addition of Eeonomer. The nanocomposites containing 5 wt.% Eeonomer exhibited a dielectric constant of about 222.65 (50 Hz, 150°C), which was 18 times that of the dielectric constant (12.33) of neat PVA film under the same experimental conditions. These results thus indicate that PVA/Eeonomer nanocomposites can be used as a flexible high-k dielectric material for embedded capacitor applications.

  14. Development and characterization of high temperature, high energy density dielectric materials to establish routes towards power electronics capacitive devices

    Science.gov (United States)

    Shay, Dennis P.

    The maximum electrostatic energy density of a capacitor is a function of the relative permittivity (epsilonr) and the square of the dielectric breakdown strength (Eb). Currently, state-of-the art high temperature (>200 °C), SiC-based power electronics utilize CaZrO3-rich NP0/C0G-type capacitors, which have low relative permittivities of epsilonr ˜ 30-40, high breakdown strengths (> 1.0 MV/cm), and are chosen for their minimal change in energy storage with temperature. However, with operating temperatures exceeding the rated temperatures for such capacitors, there is an opportunity to develop new dielectric ceramics having higher energy densities and volumetric efficiencies at high temperatures (>200 °C) by utilizing higher permittivity dielectrics while maintaining high breakdown strengths via doping. The solid solution behavior of was characterized in order to determine the optimal composition for balancing permittivity and dielectric breakdown strength to obtain high energy densities at elevated temperatures. Characterization by X-ray diffraction (XRD) showed Vegard's law behavior across the solid solution with minimal 2nd phases. To determine a Ca(TixZr1-x)O3 composition that will also minimize electronic or band conduction, the optical properties of the Ca(TixZr1-x)O3 solid solution were investigated to identify a composition on the CaTiO3 - rich end of the solid solution with a large band gap. Both ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis) and spectroscopic ellipsometry were utilized to determine the Ca(TixZr1-x)O3 band gaps and optical properties. The resistivity at 250 °C scaled with the band gap energy across the solid solution. Comparing the current-voltage (I--V) behavior at 250 °C for Ca(Tix-yMnyZr0.2)O3 (CTZ + Mn) where x = 0.7, 0.8, 0.9, and y = 0.005, it was found that the Ca(Ti 0.795Mn0.005Zr0.2)O3 composition showed the lowest current density and a decrease in current density of 5 orders of magnitude compared to the un

  15. Effect of shape of scatterers and plasma frequency on the complete photonic band gap properties of two-dimensional dielectric-plasma photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Fathollahi Khalkhali, T., E-mail: tfathollahi@aeoi.org.ir; Bananej, A.

    2016-12-16

    In this study, we analyze complete photonic band gap properties of two-dimensional dielectric-plasma photonic crystals with triangular and square lattices, composed of plasma rods with different geometrical shapes in the anisotropic tellurium background. Using the finite-difference time-domain method we discuss the maximization of the complete photonic band gap width as a function of plasma frequency and plasma rods parameters with different shapes and orientations. The numerical results demonstrate that our proposed structures represent significantly wide complete photonic band gaps in comparison to previously studied dielectric-plasma photonic crystals. - Highlights: • In this paper, we have investigated plasma photonic crystals. • Plasma is a kind of dispersive medium with its equivalent refractive index related to the frequency of an incident EM wave. • In this work, our simulations are performed using the Meep implementation of the finite-difference time-domain (FDTD) method. • For this study, the lattice structures investigated are triangular and square. • Extensive calculations reveal that almost all of these structures represent wide complete band gaps.

  16. Effect of shape of scatterers and plasma frequency on the complete photonic band gap properties of two-dimensional dielectric-plasma photonic crystals

    International Nuclear Information System (INIS)

    Fathollahi Khalkhali, T.; Bananej, A.

    2016-01-01

    In this study, we analyze complete photonic band gap properties of two-dimensional dielectric-plasma photonic crystals with triangular and square lattices, composed of plasma rods with different geometrical shapes in the anisotropic tellurium background. Using the finite-difference time-domain method we discuss the maximization of the complete photonic band gap width as a function of plasma frequency and plasma rods parameters with different shapes and orientations. The numerical results demonstrate that our proposed structures represent significantly wide complete photonic band gaps in comparison to previously studied dielectric-plasma photonic crystals. - Highlights: • In this paper, we have investigated plasma photonic crystals. • Plasma is a kind of dispersive medium with its equivalent refractive index related to the frequency of an incident EM wave. • In this work, our simulations are performed using the Meep implementation of the finite-difference time-domain (FDTD) method. • For this study, the lattice structures investigated are triangular and square. • Extensive calculations reveal that almost all of these structures represent wide complete band gaps.

  17. Age dependence of dielectric properties of bovine brain and ocular tissues in the frequency range of 400 MHz to 18 GHz

    International Nuclear Information System (INIS)

    Schmid, Gernot; Ueberbacher, Richard

    2005-01-01

    In order to identify possible age-dependent dielectric properties of brain and eye tissues in the frequency range of 400 MHz to 18 GHz, measurements on bovine grey and white matter as well as on cornea, lens (cortical) and the vitreous body were performed using a commercially available open-ended coaxial probe and a computer-controlled vector network analyser. Freshly excised tissues of 52 animals of two age groups (42 adult animals, i.e. 16-24 month old and 10 young animals, i.e. 4-6 month old calves) were examined within 8 min (brain tissue) and 15 min (eye tissue), respectively, of the animals' death. Tissue temperatures for the measurements were 32 ± 1 0 C and 25 ± 1 0 C for brain and eye tissues, respectively. Statistical analysis of the measured data revealed significant differences in the dielectric properties of white matter and cortical lens tissue between the adult and the young group. In the case of white matter the mean values of conductivity and permittivity of young tissue were 15%-22% and 12%-15%, respectively, higher compared to the adult tissue in the considered frequency range. Similarly, young cortical lens tissue was 25%-76% higher in conductivity and 27%-39% higher in permittivity than adult cortical lens tissue

  18. Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors.

    Science.gov (United States)

    Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li

    2011-09-01

    Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors.

  19. HIGH FREQUENCY INDUCTION WELDING OF HIGH SILICON STEEL TUBES

    Directory of Open Access Journals (Sweden)

    Ricardo Miranda Alé

    2012-06-01

    Full Text Available High-Si steel is a low cost alternative for the fabrication of tubular structures resistant to atmospheric corrosion. However, the literature has often pointed out that steels presenting a higher Si content and/or a lower Mn/Si ratio have higher susceptibility to defects at the weld bond line during HFIW (High Frequency Induction Welding process, which has been widely used for manufacturing small diameter tubes. In this study the effect of the HFIW conditions on the quality of steel tubes with high-Si content and low Mn/Si ratio is investigated. The quality of welded tubes was determined by flare test and the defects in the bond line were identified by SEM. It has been found that higher welding speeds, V-convergence angles and power input should be applied in welding of high-Si steel, when compared to similar strength C-Mn steel.

  20. Dielectric properties of hybrid perovskites and drift-diffusion modeling of perovskite cells

    Science.gov (United States)

    Pedesseau, L.; Kepenekian, M.; Sapori, D.; Huang, Y.; Rolland, A.; Beck, A.; Cornet, C.; Durand, O.; Wang, S.; Katan, C.; Even, J.

    2016-03-01

    A method based on DFT is used to obtained dielectric profiles. The high frequency Ɛ∞(z) and the static Ɛs(z) dielectric profiles are compared for 3D, 2D-3D and 2D Hybrid Organic Perovskites (HOP). A dielectric confinement is observed for the 2D materials between the high dielectric constant of the inorganic part and the low dielectric constant of the organic part. The effect of the ionic contribution on the dielectric constant is also shown. The quantum and dielectric confinements of 3D HOP nanoplatelets are then reported. Finally, a numerical simulation based on the SILVACO code of a HOP based solar cell is proposed for various permittivity of MAPbI3.

  1. Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment

    Science.gov (United States)

    Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

    2018-05-01

    Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

  2. High-efficiency dielectric barrier Xe discharge lamp: theoretical and experimental investigations

    International Nuclear Information System (INIS)

    Beleznai, Sz; Mihajlik, G; Agod, A; Maros, I; Juhasz, R; Nemeth, Zs; Jakab, L; Richter, P

    2006-01-01

    A dielectric barrier Xe discharge lamp producing vacuum-ultraviolet radiation with high efficiency was investigated theoretically and experimentally. The cylindrical glass body of the lamp is equipped with thin strips of metal electrodes applied to diametrically opposite sides of the outer surface. We performed a simulation of discharge plasma properties based on one-dimensional fluid dynamics and also assessed the lamp characteristics experimentally. Simulation and experimental results are analysed and compared in terms of voltage and current characteristics, power input and discharge efficiency. Using the proposed lamp geometry and fast rise-time short square pulses of the driving voltage, an intrinsic discharge efficiency around 56% was predicted by simulation, and more than 60 lm W -1 lamp efficacy (for radiation converted into visible green light by phosphor coating) was demonstrated experimentally

  3. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  4. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  5. Modulated convection at high frequencies and large modulation amplitudes

    International Nuclear Information System (INIS)

    Swift, J.B.; Hohenberg, P.C.

    1987-01-01

    Modulated Rayleigh-Benard convection is analyzed for high frequencies and large modulation amplitudes. The linear theory of Gershuni and Zhukhovitskii is generalized to the nonlinear domain, and a subcritical bifurcation to convection is found in agreement with the experiments of Niemela and Donnelly. The crossover between the high-frequency (''Stokes layer'') regime and the low-frequency regime studied previously is analyzed

  6. Calculation of Leakage Inductance for High Frequency Transformers

    DEFF Research Database (Denmark)

    Ouyang, Ziwei; Jun, Zhang; Hurley, William Gerard

    2015-01-01

    Frequency dependent leakage inductance is often observed. High frequency eddy current effects cause a reduction in leakage inductance. The proximity effect between adjacent layers is responsible for the reduction of leakage inductance. This paper gives a detailed analysis of high frequency leakag...

  7. Life estimation and analysis of dielectric strength, hydrocarbon backbone and oxidation of high voltage multi stressed EPDM composites

    Science.gov (United States)

    Khattak, Abraiz; Amin, Muhammad; Iqbal, Muhammad; Abbas, Naveed

    2018-02-01

    Micro and nanocomposites of ethylene propylene diene monomer (EPDM) are recently studied for different characteristics. Study on life estimation and effects of multiple stresses on its dielectric strength and backbone scission and oxidation is also vital for endorsement of these composites for high voltage insulation and other outdoor applications. In order to achieve these goals, unfilled EPDM and its micro and nanocomposites are prepared at 23 phr micro silica and 6 phr nanosilica loadings respectively. Prepared samples are energized at 2.5 kV AC voltage and subjected for a long time to heat, ultraviolet radiation, acid rain, humidity and salt fog in accelerated manner in laboratory. Dielectric strength, leakage current and intensity of saturated backbone and carbonyl group are periodically measured. Loss in dielectric strength, increase in leakage current and backbone degradation and oxidation were observed in all samples. These effects were least in the case of EPDM nanocomposite. The nanocomposite sample also demonstrated longest shelf life.

  8. The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

    International Nuclear Information System (INIS)

    Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

    2014-01-01

    One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd 2 O 3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures

  9. An inkjet vision measurement technique for high-frequency jetting

    International Nuclear Information System (INIS)

    Kwon, Kye-Si; Jang, Min-Hyuck; Park, Ha Yeong; Ko, Hyun-Seok

    2014-01-01

    Inkjet technology has been used as manufacturing a tool for printed electronics. To increase the productivity, the jetting frequency needs to be increased. When using high-frequency jetting, the printed pattern quality could be non-uniform since the jetting performance characteristics including the jetting speed and droplet volume could vary significantly with increases in jet frequency. Therefore, high-frequency jetting behavior must be evaluated properly for improvement. However, it is difficult to measure high-frequency jetting behavior using previous vision analysis methods, because subsequent droplets are close or even merged. In this paper, we present vision measurement techniques to evaluate the drop formation of high-frequency jetting. The proposed method is based on tracking target droplets such that subsequent droplets can be excluded in the image analysis by focusing on the target droplet. Finally, a frequency sweeping method for jetting speed and droplet volume is presented to understand the overall jetting frequency effects on jetting performance

  10. An inkjet vision measurement technique for high-frequency jetting

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Kye-Si, E-mail: kskwon@sch.ac.kr; Jang, Min-Hyuck; Park, Ha Yeong [Department of Mechanical Engineering, Soonchunhyang University 22, Soonchunhyang-Ro, Shinchang, Asan Chungnam 336-745 (Korea, Republic of); Ko, Hyun-Seok [Department of Electrical and Robot Engineering, Soonchunhyang University, 22, Soonchunhyang-Ro, Shinchang, Asan Chungnam 336-745 (Korea, Republic of)

    2014-06-15

    Inkjet technology has been used as manufacturing a tool for printed electronics. To increase the productivity, the jetting frequency needs to be increased. When using high-frequency jetting, the printed pattern quality could be non-uniform since the jetting performance characteristics including the jetting speed and droplet volume could vary significantly with increases in jet frequency. Therefore, high-frequency jetting behavior must be evaluated properly for improvement. However, it is difficult to measure high-frequency jetting behavior using previous vision analysis methods, because subsequent droplets are close or even merged. In this paper, we present vision measurement techniques to evaluate the drop formation of high-frequency jetting. The proposed method is based on tracking target droplets such that subsequent droplets can be excluded in the image analysis by focusing on the target droplet. Finally, a frequency sweeping method for jetting speed and droplet volume is presented to understand the overall jetting frequency effects on jetting performance.

  11. A high voltage DC-DC converter driving a Dielectric Electro Active Polymer actuator for wind turbine flaps

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    The Dielectric Electro Active Polymer (DEAP) material is a very thin (~80 μm) silicone elastomer film with a compliant metallic electrode layer on both sides. The DEAP is fundamentally a capacitor that is capable of very high strain. The property that the polymer changes its shape, as a result...

  12. High-frequency analog integrated circuit design

    CERN Document Server

    1995-01-01

    To learn more about designing analog integrated circuits (ICs) at microwave frequencies using GaAs materials, turn to this text and reference. It addresses GaAs MESFET-based IC processing. Describes the newfound ability to apply silicon analog design techniques to reliable GaAs materials and devices which, until now, was only available through technical papers scattered throughout hundred of articles in dozens of professional journals.

  13. Coplanar stripline components for high frequency application

    Science.gov (United States)

    Goverdhanam, Kavita; Simons, Rainee N.; Dib, Nihad; Katehi, Linda P. B.

    1996-01-01

    In this paper, coplanar stripline discontinuities such as a slit, a right angle bend and a T-junction are characterized and their performance is parameterized with respect to frequency and geometry. Lumped equivalent circuits are presented for some of them. The element values are obtained from the measured discontinuity scattering (S) parameters. The experimental results are compared with theoretical data obtained using the Finite Difference Time Domain (FD-TD) technique for validation and show very good agreement.

  14. Low frequency dielectric relaxation processes and ionic conductivity of montmorillonite clay nanoparticles colloidal suspension in poly(vinyl pyrrolidone−ethylene glycol blends

    Directory of Open Access Journals (Sweden)

    2008-11-01

    Full Text Available The dielectric dispersion behaviour of montmorillonite (MMT clay nanoparticles colloidal suspension in poly(vinyl pyrrolidone-ethylene glycol (PVP-EG blends were investigated over the frequency range 20 Hz to 1 MHz at 30°C. The 0, 1, 2, 3, 5 and 10 wt% MMT clay concentration of the weight of total solute (MMT+PVP were prepared in PVP-EG blends using EG as solvent. The complex relative dielectric function, alternating current (ac electrical conductivity, electric modulus and impedance spectra of these materials show the relaxation processes corresponding to the micro-Brownian motion of PVP chain, ion conduction and electrode polarization phenomena. The real part of ac conductivity spectra of these materials obeys Jonscher power law σ′(ω =σdc + Aωn in upper frequency end of the measurement, whereas dispersion in lower frequency end confirms the presence of electrode polarization effect. It was observed that the increase of clay concentration in the PVP-EG blends significantly increases the ac conductivity values, and simultaneously reduces the ionic conductivity relaxation time and electric double layer relaxation time, which suggests that PVP segmental dynamics and ionic motion are strongly coupled. The intercalation of EG structures in clay galleries and exfoliation of clay sheets by adsorption of PVP-EG structures on clay surfaces are discussed by considering the hydrogen bonding interactions between the hydroxyl group (–OH of EG molecules, carbonyl group (C=O of PVP monomer units, and the hydroxylated aluminate surfaces of the MMT clay particles. Results suggest that the colloidal suspension of MMT clay nano particles in the PVP-EG blends provide a convenient way to obtain an electrolyte solution with tailored electrical conduction properties.

  15. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

    Science.gov (United States)

    Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-18

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  16. HEATING CHARACTERISTICS OF SOFTWOODS IN A HIGH FREQUENCY FIELD

    Directory of Open Access Journals (Sweden)

    Ciprian LĂZĂRESCU

    2012-12-01

    Full Text Available The research aimed to establish whetherdielectric heating at radio frequencies might be afeasible option for phytosanitation of green softwoodboards. Results are presented for two softwoodspecies, namely, lodgepole pine (Pinus contorta andwestern red cedar (Thujaplicata Donn., and forsingle-specimen testing configurations with a crosssection of 40x90mm surrounded on three sides bysimilar cross-section kiln dried boards. In terms ofdielectric properties, red cedar is nature "designed" toabsorb more easily the dielectric fields. Heating rateswere not correlated with moisture content for neitherspecies investigated thus underlining the versatility ofRF-heating that allows simultaneous rise oftemperature within dry and wet areas. Convectionlosses through air contact may reduce the averageheating rate of the shell by about 40%.

  17. Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

    Science.gov (United States)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J.

    2017-04-01

    In this paper the Dual Metal Surround Gate Junctionless Transistor (DMSGJLT) has been implemented with various high-k dielectric. The leakage current in the device is analysed in detail by obtaining the band structure for different high-k dielectric material. It is noticed that with increasing dielectric constant the device provides more resistance for the direct tunnelling of electron in off state. The gate oxide capacitance also shows 0.1 μF improvement with Hafnium Oxide (HfO2) than Silicon Oxide (SiO2). This paved the way for a better memory application when high-k dielectric is used. The Six Transistor (6T) Static Random Access Memory (SRAM) circuit implemented shows 41.4% improvement in read noise margin for HfO2 than SiO2. It also shows 37.49% improvement in write noise margin and 30.16% improvement in hold noise margin for HfO2 than SiO2.

  18. First applications of high temperature superconductors in microelectronic. Subproject: Foundations of a reality-near simulation of superconducting high frequency circuits. Final report

    International Nuclear Information System (INIS)

    Wolff, I.; Konopka, J.; Fritsch, U.; Hofschen, S.; Rittweger, M.; Becks, T.; Schroeder, W.; Ma Jianguo.

    1994-01-01

    The basis of computer aided design of the physical properties of high temperature superconductors in high frequency and microwave areas were not well known and understood at the beginning of this research project. For this reason within in the research project as well new modells for describing the microwave properties of these superconductors have been developed as alos well known numerical analysis techniques as e.g. the boundary integral method, the method of finite differences in time domain and the spectral domain analysis technique have been changed so that they meet the requirements of superconducting high frequency and microwave circuits. Hereby it especially also was considered that the substrate materials used for high temperature superconductors normally have high dielectric constants and big anisotropies so that new analysis techniques had to be developed to consider the influence of these parameters on the components and circuits. The dielectric properties of the substrate materials furthermore have been a subject of measurement activities in which the permittivity tensor of the materials have been determined with high accuracy and ogver a large frequency range. As a result of the performed investigations now improved numerical simulation techniques on a realistic basis are available for the analysis of superconducting high frequency and microwave circuits. (orig.) [de

  19. Low velocity target detection based on time-frequency image for high frequency ground wave radar

    Institute of Scientific and Technical Information of China (English)

    YAN Songhua; WU Shicai; WEN Biyang

    2007-01-01

    The Doppler spectral broadening resulted from non-stationary movement of target and radio-frequency interference will decrease the veracity of target detection by high frequency ground wave(HEGW)radar.By displaying the change of signal energy on two dimensional time-frequency images based on time-frequency analysis,a new mathematical morphology method to distinguish target from nonlinear time-frequency curves is presented.The analyzed results from the measured data verify that with this new method the target can be detected correctly from wide Doppler spectrum.

  20. Direct excitation of a high frequency wave by a low frequency wave in a plasma

    International Nuclear Information System (INIS)

    Tanaka, Takayasu

    1993-01-01

    A new mechanism is presented of an excitation of a high frequency wave by a low frequency wave in a plasma. This mechanism works when the low frequency wave varies in time in a manner deviated from a usual periodic motion with a constant amplitude. The conversion rate is usually not large but the conversion is done without time delay after the variation of the low frequency wave. The Manley Rowe relation in the usual sense does not hold in this mechanism. This mechanism can excite also waves with same or lower frequencies. (author)

  1. Low-frequency dielectric dispersion and magnetic properties of La, Gd modified Pb(Fe1/2Ta1/2)O3 multiferroics

    International Nuclear Information System (INIS)

    Choudhury, R.N.P.; Rodriguez, C.; Bhattacharya, P.; Katiyar, R.S.; Rinaldi, C.

    2007-01-01

    Pb(Fe 1/2 Ta 1/2 )O 3 (PFT) modified by rare-earth (La and Gd) ions has been synthesized in a single phase using a double-stage synthesis (i.e., Columbite) technique. Scanning electron micrographs (SEM) of the pellet samples have shown a significant change in their grain size and uniform distribution of Gd/La at the Fe-sites. The room temperature X-ray structural analysis shows that the reported cubic (or tetragonal) structure of PFT has been distorted to a monoclinic system on substitution of La/Gd at the Fe-site. Detailed studies of dielectric properties of the above compound on La/Gd substitution have shown strong dielectric dispersion at low frequency (i.e. relaxor behavior) with drastic change in transition temperature. Magnetic characterization shows that though the PFT sample displays an antiferromagnetic transition at ∼150 K, the rare-earth ions-substituted samples do not. Furthermore, temperature dependence of magnetization measurements shows that spin glass transition observed in PFT at low temperatures (5-20 K) does not exist in the La and Gd substituted PFT. Doping of Gd in PFT increases the sample magnetization, especially at low temperature

  2. Synthesis and electrical behavior of Ni-Ti substituted Y-type hexaferrites for high frequency application

    Science.gov (United States)

    Ahmad, Bashir; Ashiq, Muhammad Naeem; Mumtaz, Saleem; Ali, Irshad; Najam-Ul-Haq, Muhmmad; Sadiq, Imran

    2018-04-01

    This article reports the fabrication of Ni-Ti doped derivatives of Sr2Co2Fe12-2xO22 by economical Sol-gel method. At room temperature X-ray diffraction (XRD) pattern of powder was obtained after sintering at 1050 °C. The XRD analysis revealed the formation of pure Sr-Y hexaferrite phase. It was found that the observed values of dielectric parameters decreased with increasing Ni-Ti substitution. The higher values of dielectric constants and dielectric loss factor at lower frequency were owing to surface charge polarization. In all the samples the resonance peaks were also observed. The observed room temperature DC electrical resistivity found to increase from 1.8x106 to 4.9x109 ohm cm. The observed activation energies values of the fabricated materials are found in 0.52-0.82 eV range. The decrease in dielectric parameters and increase in resistivity of the fabricated samples with substituents suggest these materials have worth application in micro-wave devices as such devices required highly resistive materials.

  3. Study of dielectric liquids at room temperature for high energy x ray Tomography

    International Nuclear Information System (INIS)

    Lepert, S.

    1989-09-01

    The detection of X rays by means of a dielectric liquid detector system, at room temperature, is discussed. The physico-chemical properties of a dielectric liquid, the construction of a cleaning device and of two electrode configurations, and the utilization of different amplifier models are studied. The results allowed the analysis and characterization of the behavior of the dielectric liquid under X ray irradiation. Data obtained is confirmed by computerized simulation. The choice of Tetramethyl-germanium for the X ray tomography, applied in nondestructive analysis, is explained. The investigation of the system parameters allowed the setting of the basis of a prototype project for a multi-detector [fr

  4. High-frequency homogenization of zero frequency stop band photonic and phononic crystals

    CERN Document Server

    Antonakakis, Tryfon; Guenneau, Sebastien

    2013-01-01

    We present an accurate methodology for representing the physics of waves, for periodic structures, through effective properties for a replacement bulk medium: This is valid even for media with zero frequency stop-bands and where high frequency phenomena dominate. Since the work of Lord Rayleigh in 1892, low frequency (or quasi-static) behaviour has been neatly encapsulated in effective anisotropic media. However such classical homogenization theories break down in the high-frequency or stop band regime. Higher frequency phenomena are of significant importance in photonics (transverse magnetic waves propagating in infinite conducting parallel fibers), phononics (anti-plane shear waves propagating in isotropic elastic materials with inclusions), and platonics (flexural waves propagating in thin-elastic plates with holes). Fortunately, the recently proposed high-frequency homogenization (HFH) theory is only constrained by the knowledge of standing waves in order to asymptotically reconstruct dispersion curves an...

  5. High-frequency spin-dependent tunnelling in magnetic nanocomposites: Magnetorefractive effect and magnetoimpedance

    Energy Technology Data Exchange (ETDEWEB)

    Granovsky, Alexander [Faculty of Physics, Lomonosov Moscow State University, Moscow 119992 (Russian Federation)]. E-mail: granov@magn.ru; Kozlov, Andrey [Faculty of Physics, Lomonosov Moscow State University, Moscow 119992 (Russian Federation); Nedukh, Sergey [Institute of Radiophysics and Electronics NAS of Ukraine, Kharkov 61085 (Ukraine); Tarapov, Sergey [Institute of Radiophysics and Electronics NAS of Ukraine, Kharkov 61085 (Ukraine)

    2005-07-15

    Since the dielectric permittivity is linear with frequency-dependent conductivity, high-frequency properties for any kind of magnetic materials with the high magnetoresistance depend on magnetization. It manifests as magnetorefractive effect (MRE) in the infrared region of spectrum and as magnetoimpedance (MI) in the frequency range between radio and microwaves. The main mechanism of both MRE and MI in nanocomposites with tunnel-type magnetoresistance is high-frequency spin-dependent tunnelling. We report on recent results of theoretical and experimental investigations of MRE and MI in nanocomposites Co{sub 51.5}Al{sub 19.5}O{sub 29}, Co{sub 50.2}Ti{sub 9.1}O{sub 40.7}, Co{sub 52.3}Si{sub 12.2}O{sub 35.5} and (Co{sub 0,4}Fe{sub 0,6}){sub 48}(MgF){sub 52}. Most of the obtained experimental data for MRE and MI are consistent with the theory based on considering the tunnel junction between adjacent granules in percolation cluster as a capacitor.

  6. High Frequency Acoustic Propagation using Level Set Methods

    Science.gov (United States)

    2007-01-01

    solution of the high frequency approximation to the wave equation. Traditional solutions to the Eikonal equation in high frequency acoustics are...the Eikonal equation derived from the high frequency approximation to the wave equation, ucuH ∇±=∇ )(),( xx , with the nonnegative function c(x...For simplicity, we only consider the case ucuH ∇+=∇ )(),( xx . Two difficulties must be addressed when solving the Eikonal equation in a fixed

  7. Sources for high frequency heating. Performance and limitations

    International Nuclear Information System (INIS)

    Le Gardeur, R.

    1976-01-01

    The various problems encountered in high frequency heating of plasmas can be decomposed into three spheres of action: theoretical development, antenna designing, and utilization of power sources. By classifying heating into three spectral domains, present and future needs are enumerated. Several specific antenna designs are treated. High frequency power sources are reviewed. The actual development of the gyratron is discussed in view of future needs in very high frequency heating of plasmas [fr

  8. Medium band gap polymer based solution-processed high-κ composite gate dielectrics for ambipolar OFET

    Science.gov (United States)

    Canımkurbey, Betül; Unay, Hande; Çakırlar, Çiğdem; Büyükköse, Serkan; Çırpan, Ali; Berber, Savas; Altürk Parlak, Elif

    2018-03-01

    The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5:PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b:4, 5-b‧] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5:PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5:PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5:PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5:PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5:PMMA ratio.

  9. Investigation of the dielectric properties of shale

    International Nuclear Information System (INIS)

    Martemyanov, Sergey M.

    2011-01-01

    The article is dedicated to investigation of the dielectric properties of oil shale. Investigations for samples prepared from shale mined at the deposit in Jilin Province in China were done. The temperature and frequency dependences of rock characteristics needed to calculate the processes of their thermal processing are investigated. Frequency dependences for the relative dielectric constant and dissipation factor of rock in the frequency range from 0,1 Hz to 1 MHz are investigated. The temperature dependences for rock resistance, dielectric capacitance and dissipation factor in the temperature range from 20 to 600°C are studied. Key words: shale, dielectric properties, relative dielectric constant, dissipation factor, temperature dependence, frequency dependence

  10. High-frequency intrinsic dynamics of the electrocaloric effect from direct atomistic simulations

    Science.gov (United States)

    Lisenkov, S.; Ponomareva, I.

    2018-05-01

    We propose a computational methodology capable of harvesting isothermal heat and entropy change in molecular dynamics simulations. The methodology is applied to study high-frequency dynamics of the electrocaloric effect (ECE) in ferroelectric PbTiO3. ECE is associated with a reversible change in temperature under adiabatic application of electric field or with a reversible change in entropy under isothermal application of the electric field. Accurate assessment of electrocaloric performance requires the knowledge of three quantities: isothermal heat, isothermal entropy change, and adiabatic temperature change. Our methodology allows computations of all these quantities directly, that is, without restoring to the reversible thermodynamical models. Consequently, it captures both reversible and irreversible effects, which is critical for ECE simulations. The approach is well suited to address the dynamics of the ECE, which so far remains underexplored. We report the following basic features of the intrinsic dynamics of ECE: (i) the ECE is independent of the electric field frequency, rate of application, or field profile; (ii) the effect persists up to the frequencies associated with the onset of dielectric losses and deteriorates from there due to the creation of irreversible entropy; and (iii) in the vicinity of the phase transition and in the paraelectric phase the onset of irreversible dynamics occurs at lower frequency as compared to the ferroelectric phase. The latter is attributed to lower intrinsic soft-mode frequencies and and larger losses in the paraelectric phase.

  11. Palladium Gate All Around - Hetero Dielectric -Tunnel FET based highly sensitive Hydrogen Gas Sensor

    Science.gov (United States)

    Madan, Jaya; Chaujar, Rishu

    2016-12-01

    The paper presents a novel highly sensitive Hetero-Dielectric-Gate All Around Tunneling FET (HD-GAA-TFET) based Hydrogen Gas Sensor, incorporating the advantages of band to band tunneling (BTBT) mechanism. Here, the Palladium supported silicon dioxide is used as a sensing media and sensing relies on the interaction of hydrogen with Palladium-SiO2-Si. The high surface to volume ratio in the case of cylindrical GAA structure enhances the fortuities for surface reactions between H2 gas and Pd, and thus improves the sensitivity and stability of the sensor. Behaviour of the sensor in presence of hydrogen and at elevated temperatures is discussed. The conduction path of the sensor which is dependent on sensors radius has also been varied for the optimized sensitivity and static performance analysis of the sensor where the proposed design exhibits a superior performance in terms of threshold voltage, subthreshold swing, and band to band tunneling rate. Stability of the sensor with respect to temperature affectability has also been studied, and it is found that the device is reasonably stable and highly sensitive over the bearable temperature range. The successful utilization of HD-GAA-TFET in gas sensors may open a new door for the development of novel nanostructure gas sensing devices.

  12. High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths

    Science.gov (United States)

    Emani, Naresh Kumar; Khaidarov, Egor; Paniagua-Domínguez, Ramón; Fu, Yuan Hsing; Valuckas, Vytautas; Lu, Shunpeng; Zhang, Xueliang; Tan, Swee Tiam; Demir, Hilmi Volkan; Kuznetsov, Arseniy I.

    2017-11-01

    The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient visible-light operation is key to integrating atomic quantum systems for future quantum computing. Gallium nitride (GaN), a III-V semiconductor which is highly transparent at visible wavelengths, is a promising material choice for active, nonlinear, and quantum nanophotonic applications. Here, we present the design and experimental realization of high efficiency beam deflecting and polarization beam splitting metasurfaces consisting of GaN nanostructures etched on the GaN epitaxial substrate itself. We demonstrate a polarization insensitive beam deflecting metasurface with 64% and 90% absolute and relative efficiencies. Further, a polarization beam splitter with an extinction ratio of 8.6/1 (6.2/1) and a transmission of 73% (67%) for p-polarization (s-polarization) is implemented to demonstrate the broad functionality that can be realized on this platform. The metasurfaces in our work exhibit a broadband response in the blue wavelength range of 430-470 nm. This nanophotonic platform of GaN shows the way to off- and on-chip nonlinear and quantum photonic devices working efficiently at blue emission wavelengths common to many atomic quantum emitters such as Ca+ and Sr+ ions.

  13. Ceramic-polymer nanocomposites with increased dielectric permittivity and low dielectric loss

    International Nuclear Information System (INIS)

    Bhardwaj, Sumit; Paul, Joginder; Raina, K. K.; Thakur, N. S.; Kumar, Ravi

    2014-01-01

    The use of lead free materials in device fabrication is very essential from environmental point of view. We have synthesized the lead free ferroelectric polymer nanocomposite films with increased dielectric properties. Lead free bismuth titanate has been used as active ceramic nanofillers having crystallite size 24nm and PVDF as the polymer matrix. Ferroelectric β-phase of the polymer composite films was confirmed by X-ray diffraction pattern. Mapping data confirms the homogeneous dispersion of ceramic particles into the polymer matrix. Frequency dependent dielectric constant increases up to 43.4 at 100Hz, whereas dielectric loss decreases with 7 wt% bismuth titanate loading. This high dielectric constant lead free ferroelectric polymer films can be used for energy density applications

  14. Calibration of High Frequency MEMS Microphones

    Science.gov (United States)

    Shams, Qamar A.; Humphreys, William M.; Bartram, Scott M.; Zuckewar, Allan J.

    2007-01-01

    Understanding and controlling aircraft noise is one of the major research topics of the NASA Fundamental Aeronautics Program. One of the measurement technologies used to acquire noise data is the microphone directional array (DA). Traditional direction array hardware, consisting of commercially available condenser microphones and preamplifiers can be too expensive and their installation in hard-walled wind tunnel test sections too complicated. An emerging micro-machining technology coupled with the latest cutting edge technologies for smaller and faster systems have opened the way for development of MEMS microphones. The MEMS microphone devices are available in the market but suffer from certain important shortcomings. Based on early experiments with array prototypes, it has been found that both the bandwidth and the sound pressure level dynamic range of the microphones should be increased significantly to improve the performance and flexibility of the overall array. Thus, in collaboration with an outside MEMS design vendor, NASA Langley modified commercially available MEMS microphone as shown in Figure 1 to meet the new requirements. Coupled with the design of the enhanced MEMS microphones was the development of a new calibration method for simultaneously obtaining the sensitivity and phase response of the devices over their entire broadband frequency range. Over the years, several methods have been used for microphone calibration. Some of the common methods of microphone calibration are Coupler (Reciprocity, Substitution, and Simultaneous), Pistonphone, Electrostatic actuator, and Free-field calibration (Reciprocity, Substitution, and Simultaneous). Traditionally, electrostatic actuators (EA) have been used to characterize air-condenser microphones for wideband frequency ranges; however, MEMS microphones are not adaptable to the EA method due to their construction and very small diaphragm size. Hence a substitution-based, free-field method was developed to

  15. Dielectric-filled radiofrequency linacs

    Energy Technology Data Exchange (ETDEWEB)

    Faehl, R J; Keinigs, R K; Pogue, E W [Los Alamos National Lab., NM (United States)

    1997-12-31

    High current, high brightness electron beam accelerators promise to open up dramatic new applications. Linear induction accelerators are currently viewed as the appropriate technology for these applications. A concept by Humphries and Hwang may permit radiofrequency accelerators to fulfill the same functions with greater simplicity and enhanced flexibility. This concept involves the replacement of vacuum rf cavities with dielectric filled ones. Simple analysis indicates that the resonant frequencies are reduced by a factor of ({epsilon}{sub 0}/{epsilon}){sup 1/2} while the stored energy is increased by {epsilon}/{epsilon}{sub 0}. For a high dielectric constant like water, this factor can approach 80. A series of numerical calculations of simple pill-box cavities was performed. Eigenfunctions and resonant frequencies for a full system configuration, including dielectric material, vacuum beamline, and a ceramic window separating the two have been computed. These calculations are compared with the results of a small experimental cavity which have been constructed and operated. Low power tests show excellent agreement. (author). 4 figs., 8 refs.

  16. Dielectric behaviour of strontium tartrate single crystals

    Indian Academy of Sciences (India)

    Unknown

    dielectric loss (tan δ) as functions of frequency and temperature. Ion core type ... Since the data on dielectric properties of strontium tartrate trihydrate (STT) do not ... through 'AE' make 15-amp dimmerstat, the rate of heating was maintained ...

  17. Analysis of Dielectric Electro Active Polymer Actuator and its High Voltage Driving Circuits

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Huang, Lina; Zhang, Zhe

    2012-01-01

    Actuators based on dielectric elastomers have promising applications in artificial muscles, space robotics, mechatronics, micro-air vehicles, pneumatic and electric automation technology, heating valves, loud speakers, tissue engineering, surgical tools, wind turbine flaps, toys, rotary motors...

  18. Propagation of high-current fast electron beam in a dielectric target

    International Nuclear Information System (INIS)

    Klimo, O.; Debayle, A.; Tikhonchuk, V.T.

    2006-01-01

    Complete test of publication follows. A relativistic electron beam with very high current density may be produced during the interaction of a short high intensity laser pulse with a solid target. In Fast Ignition approach to Inertial Confinement Fusion, such beam is supposed to heat a part of the precompressed DT fuel pellet to the conditions of an efficient ignition. For successful implementation of Fast Ignition understanding the propagation and energy deposition of the beam is crucial. A number of processes, mostly associated with the return current, are dissipating the energy of the beam or inhibiting its collimated transport, namely the filamentation. Weibel, two-stream or the recently proposed ionization instability. Ionization instability may develop in a solid dielectric target due to the dependence of the propagation velocity of the beam on the beam density. To study the propagation of high current electron beam in dielectric target, we use a one-dimensional relativistic electrostatic simulation code based on the Particle in Cell method. The code includes ionization processes in dielectric material and collisions of newly generated cold electrons. The current density of the relativistic electron beam used in this work is in the range 3-300 GA/cm 2 , while its length roughly corresponds to the beam, produced by a 40 fs laser pulse. Propagation of the beam in the polyethylene target is studied. The code is complemented by an analytical model, which is applicable og a wider range of beam parameters that are currently beyond our computational possibilities. When the head of the beam enters the plastic target, electric field grows rapidly in consequence of the charge separation and it starts to ionize atoms. In the maximum of the field, which is less than 10% of the atomic field, the density of new free electrons is two orders of magnitude higher than the beam density, which is enough for the current neutralization. Cold electrons are accelerated by the field

  19. Cosmic microwave background distortions at high frequencies

    International Nuclear Information System (INIS)

    Peter, W.; Peratt, A.L.

    1988-01-01

    The authors analyze the deviation of the cosmic background radiation spectrum from the 2.76+-0.02 0 Κ blackbody curve. If the cosmic background radiation is due to absorption and re-emission of synchrotron radiation from galactic-width current filaments, higher-order synchrotron modes are less thermalized than lower-order modes, causing a distortion of the blackbody curve at higher frequencies. New observations of the microwave background spectrum at short wavelengths should provide an indication of the number of synchrotron modes thermalized in this process. The deviation of the spectrum from that of a perfect blackbody can thus be correlated with astronomical observations such as filament temperatures and electron energies. The results are discussed and compared with the theoretical predictions of other models which assume the presence of intergalactic superconducting cosmic strings

  20. Empty substrate integrated waveguide technology for E plane high-frequency and high-performance circuits

    Science.gov (United States)

    Belenguer, Angel; Cano, Juan Luis; Esteban, Héctor; Artal, Eduardo; Boria, Vicente E.

    2017-01-01

    Substrate integrated circuits (SIC) have attracted much attention in the last years because of their great potential of low cost, easy manufacturing, integration in a circuit board, and higher-quality factor than planar circuits. A first suite of SIC where the waves propagate through dielectric have been first developed, based on the well-known substrate integrated waveguide (SIW) and related technological implementations. One step further has been made with a new suite of empty substrate integrated waveguides, where the waves propagate through air, thus reducing the associated losses. This is the case of the empty substrate integrated waveguide (ESIW) or the air-filled substrate integrated waveguide (air-filled SIW). However, all these SIC are H plane structures, so classical H plane solutions in rectangular waveguides have already been mapped to most of these new SIC. In this paper a novel E plane empty substrate integrated waveguide (ESIW-E) is presented. This structure allows to easily map classical E plane solutions in rectangular waveguide to this new substrate integrated solution. It is similar to the ESIW, although more layers are needed to build the structure. A wideband transition (covering the frequency range between 33 GHz and 50 GHz) from microstrip to ESIW-E is designed and manufactured. Measurements are successfully compared with simulation, proving the validity of this new SIC. A broadband high-frequency phase shifter (for operation from 35 GHz to 47 GHz) is successfully implemented in ESIW-E, thus proving the good performance of this new SIC in a practical application.

  1. Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites

    Science.gov (United States)

    Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D.; Hill, Curtis W.; Brewer, Jeffrey C.; Tucker, Dennis S.; Cheng, Z.-Y.

    2016-01-01

    Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced–up to about 10 times – by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10−1). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing. PMID:27767184

  2. Thermal dielectric function

    International Nuclear Information System (INIS)

    Moneta, M.

    1999-01-01

    Thermal dielectric functions ε(k,ω) for homogeneous electron gas were determined and discussed. The ground state of the gas is described by the Fermi-Dirac momentum distribution. The low and high temperature limits of ε(k,ω) were related to the Lindhard dielectric function and to ε(k, omega) derived for Boltzmann and for classical momentum distributions, respectively. (author)

  3. 2 filler on the dielectric permittivity and electrical modulus of PMMA

    Indian Academy of Sciences (India)

    The real and imaginary part of the dielectric permittivity decreased with the increase in frequency but increased with temperature. The electrical conductivity measurement showed a plateau-like behaviour in the low-frequency region and dispersion in the high-frequency region. The frequency-dependent electrical modulus ...

  4. Investigation of beta dielectric dispersion in Bovine yellow bone ...

    African Journals Online (AJOL)

    This technique makes use of a marconi magnification meter TF 1245 working in conjunction with a radio frequently oscillator TF 1246. In general the tissue exhibited a decrease in dielectric constant, ε΄ with increase in frequency until a lower steady value was attained at high frequency. JONAMP Vol. 11 2007: pp. 461-466 ...

  5. High frequency response of open quantum dots

    International Nuclear Information System (INIS)

    Brunner, R.; Meisels, R.; Kuchar, F.; Ferry, D.; Elhassan, M.; Ishibashi, K.

    2002-01-01

    Full text: We investigate the response of the transport through open quantum dots to millimeterwave radiation (up to 55 GHz). In the low-field region ( 11 cm -2 and a mobility of 1.2 10 6 cm 2 /Vs. By applying a sufficiently negative voltage to the gates the 2DES is split into two regions connected only by a dot-like region (about 350 nm diameter) between them. The DC data exhibit backscattering peaks at fields of a few tenth of a Tesla. Shubnikovde- Haas (SdH) oscillations appear above 0.5 T. While the SdH oscillations show the usual temperature dependence, the backscattering peaks are temperature independent up to 2.5 K. The backscattering peak shows a reduction of 10 percent due to the millimeterwave irradiation. However, due to the temperature independence of this peak, this reduction cannot simply be attributed to electron heating. This conclusion is supported by the observation of a strong frequency dependence of the reduction of the peak height. (author)

  6. Imaging performance of an isotropic negative dielectric constant slab.

    Science.gov (United States)

    Shivanand; Liu, Huikan; Webb, Kevin J

    2008-11-01

    The influence of material and thickness on the subwavelength imaging performance of a negative dielectric constant slab is studied. Resonance in the plane-wave transfer function produces a high spatial frequency ripple that could be useful in fabricating periodic structures. A cost function based on the plane-wave transfer function provides a useful metric to evaluate the planar slab lens performance, and using this, the optimal slab dielectric constant can be determined.

  7. Gender Identification Using High-Frequency Speech Energy: Effects of Increasing the Low-Frequency Limit.

    Science.gov (United States)

    Donai, Jeremy J; Halbritter, Rachel M

    The purpose of this study was to investigate the ability of normal-hearing listeners to use high-frequency energy for gender identification from naturally produced speech signals. Two experiments were conducted using a repeated-measures design. Experiment 1 investigated the effects of increasing high-pass filter cutoff (i.e., increasing the low-frequency spectral limit) on gender identification from naturally produced vowel segments. Experiment 2 studied the effects of increasing high-pass filter cutoff on gender identification from naturally produced sentences. Confidence ratings for the gender identification task were also obtained for both experiments. Listeners in experiment 1 were capable of extracting talker gender information at levels significantly above chance from vowel segments high-pass filtered up to 8.5 kHz. Listeners in experiment 2 also performed above chance on the gender identification task from sentences high-pass filtered up to 12 kHz. Cumulatively, the results of both experiments provide evidence that normal-hearing listeners can utilize information from the very high-frequency region (above 4 to 5 kHz) of the speech signal for talker gender identification. These findings are at variance with current assumptions regarding the perceptual information regarding talker gender within this frequency region. The current results also corroborate and extend previous studies of the use of high-frequency speech energy for perceptual tasks. These findings have potential implications for the study of information contained within the high-frequency region of the speech spectrum and the role this region may play in navigating the auditory scene, particularly when the low-frequency portion of the spectrum is masked by environmental noise sources or for listeners with substantial hearing loss in the low-frequency region and better hearing sensitivity in the high-frequency region (i.e., reverse slope hearing loss).

  8. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  9. A high-switching-frequency flyback converter in resonant mode

    NARCIS (Netherlands)

    Li, Jianting; van Horck, Frank B.M.; Daniel, Bobby J.; Bergveld, Henk Jan

    2017-01-01

    The demand of miniaturization of power systems has accelerated the research on high-switching-frequency power converters. A flyback converter in resonant mode that features low switching losses, less transformer losses, and low switching noise at high switching frequency is investigated in this

  10. Nanohertz frequency determination for the gravity probe B high frequency superconducting quantum interference device signal.

    Science.gov (United States)

    Salomon, M; Conklin, J W; Kozaczuk, J; Berberian, J E; Keiser, G M; Silbergleit, A S; Worden, P; Santiago, D I

    2011-12-01

    In this paper, we present a method to measure the frequency and the frequency change rate of a digital signal. This method consists of three consecutive algorithms: frequency interpolation, phase differencing, and a third algorithm specifically designed and tested by the authors. The succession of these three algorithms allowed a 5 parts in 10(10) resolution in frequency determination. The algorithm developed by the authors can be applied to a sampled scalar signal such that a model linking the harmonics of its main frequency to the underlying physical phenomenon is available. This method was developed in the framework of the gravity probe B (GP-B) mission. It was applied to the high frequency (HF) component of GP-B's superconducting quantum interference device signal, whose main frequency f(z) is close to the spin frequency of the gyroscopes used in the experiment. A 30 nHz resolution in signal frequency and a 0.1 pHz/s resolution in its decay rate were achieved out of a succession of 1.86 s-long stretches of signal sampled at 2200 Hz. This paper describes the underlying theory of the frequency measurement method as well as its application to GP-B's HF science signal.

  11. Thrust Measurement of Dielectric Barrier Discharge (DBD) Plasma Actuators: New Anti-Thrust Hypothesis, Frequency Sweeps Methodology, Humidity and Enclosure Effects

    Science.gov (United States)

    Ashpis, David E.; Laun, Matthew C.

    2014-01-01

    We discuss thrust measurements of Dielectric Barrier Discharge (DBD) plasma actuators devices used for aerodynamic active flow control. After a review of our experience with conventional thrust measurement and significant non-repeatability of the results, we devised a suspended actuator test setup, and now present a methodology of thrust measurements with decreased uncertainty. The methodology consists of frequency scans at constant voltages. The procedure consists of increasing the frequency in a step-wise fashion from several Hz to the maximum frequency of several kHz, followed by frequency decrease back down to the start frequency of several Hz. This sequence is performed first at the highest voltage of interest, then repeated at lower voltages. The data in the descending frequency direction is more consistent and selected for reporting. Sample results show strong dependence of thrust on humidity which also affects the consistency and fluctuations of the measurements. We also observed negative values of thrust, or "anti-thrust", at low frequencies between 4 Hz and up to 64 Hz. The anti-thrust is proportional to the mean-squared voltage and is frequency independent. Departures from the parabolic anti-thrust curve are correlated with appearance of visible plasma discharges. We propose the anti-thrust hypothesis. It states that the measured thrust is a sum of plasma thrust and anti-thrust, and assumes that the anti-thrust exists at all frequencies and voltages. The anti-thrust depends on actuator geometry and materials and on the test installation. It enables the separation of the plasma thrust from the measured total thrust. This approach enables more meaningful comparisons between actuators at different installations and laboratories. The dependence on test installation was validated by surrounding the actuator with a grounded large-diameter metal sleeve. Strong dependence on humidity is also shown; the thrust significantly increased with decreasing humidity, e

  12. Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

    Directory of Open Access Journals (Sweden)

    Chao-Te Liu

    2012-01-01

    Full Text Available The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1, a large current ratio (>103 and a low operation voltage (<6 V. Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

  13. Shell structure in superdeformed nuclei at high rotational frequencies

    International Nuclear Information System (INIS)

    Ploszajczak, M.

    1980-01-01

    Properties of the shell structure in superdeformed nuclei at high rotational frequencies are discussed. Moreover, stability of the high spin compound nucleus with respect to the fission and the emission of light particles is investigated. (author)

  14. Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Tian Ben-Lang; Chen Chao; Li Yan-Rong; Zhang Wan-Li; Liu Xing-Zhao

    2012-01-01

    Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al 2 O 3 as the precursors. The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement, are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance—voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN. The interface trap density of metal—insulator—semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5∼9.5)×10 10 cm −2 ·eV −1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7×10 12 cm −2 . Compared with the AlGaN/GaN metal—semiconductor heterostructure high-electron-mobility transistor (MESHEMT), the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from −5.5 V to −3.5 V. From XPS results, the surface valence-band maximum (VBM-EF) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG). (condensed matter: structural, mechanical, and thermal properties)

  15. The effect of dielectric top lids on materials processing in a low frequency inductively coupled plasma (LF-ICP) reactor

    International Nuclear Information System (INIS)

    Lim, J.W.M.; Chan, C.S.; Xu, L.; Xu, S.

    2014-01-01

    The advent of the plasma revolution began in the 1970's with the exploitation of plasma sources for anisotropic etching and processing of materials. In recent years, plasma processing has gained popularity, with research institutions adopting projects in the field and industries implementing dry processing in their production lines. The advantages of utilizing plasma sources would be uniform processing over a large exposed surface area, and the reduction of toxic emissions. This leads to reduced costs borne by manufacturers which could be passed down as consumer savings, and a reduction in negative environmental impacts. Yet, one constraint that plagues the industry would be the control of contaminants in a plasma reactor which becomes evident when reactions are conducted in a clean vacuum environment. In this work, amorphous silicon (a-Si) thin films were grown on glass substrates in a low frequency inductively coupled plasma (LF-ICP) reactor with a top lid made of quartz. Even though the chamber was kept at high vacuum (~10 −4 Pa), it was evident through secondary ion mass spectroscopy (SIMS) and Fourier-transform infra-red spectroscopy (FTIR) that oxygen contaminants were present. With the aid of optical emission spectroscopy (OES) the contaminant species were identified. The design of the LF-ICP reactor was then modified to incorporate an Alumina (Al 2 O 3 ) lid. Results indicate that there were reduced amounts of contaminants present in the reactor, and that an added benefit of increased power transfer to the plasma, improving deposition rate of thin films was realized. The results of this study is conclusive in showing that Al 2 O 3 is a good alternative as a top-lid of an LF-ICP reactor, and offers industries a solution in improving quality and rate of growth of thin films. (author)

  16. Dielectric properties of lunar surface

    Science.gov (United States)

    Yushkova, O. V.; Kibardina, I. N.

    2017-03-01

    Measurements of the dielectric characteristics of lunar soil samples are analyzed in the context of dielectric theory. It has been shown that the real component of the dielectric permittivity and the loss tangent of rocks greatly depend on the frequency of the interacting electromagnetic field and the soil temperature. It follows from the analysis that one should take into account diurnal variations in the lunar surface temperature when interpreting the radar-sounding results, especially for the gigahertz radio range.

  17. Modeling and Mitigation for High Frequency Switching Transients Due to Energization in Offshore Wind Farms

    Directory of Open Access Journals (Sweden)

    Yanli Xin

    2016-12-01

    Full Text Available This paper presents a comprehensive investigation on high frequency (HF switching transients due to energization of vacuum circuit breakers (VCBs in offshore wind farms (OWFs. This research not only concerns the modeling of main components in collector grids of an OWF for transient analysis (including VCBs, wind turbine transformers (WTTs, submarine cables, but also compares the effectiveness between several mainstream switching overvoltage (SOV protection methods and a new mitigation method called smart choke. In order to accurately reproduce such HF switching transients considering the current chopping, dielectric strength (DS recovery capability and HF quenching capability of VCBs, three models are developed, i.e., a user–defined VCB model, a HF transformer terminal model and a three-core (TC frequency dependent model of submarine cables, which are validated through simulations and compared with measurements. Based on the above models and a real OWF configuration, a simulation model is built and several typical switching transient cases are investigated to analyze the switching transient process and phenomena. Subsequently, according to the characteristics of overvoltages, appropriate parameters of SOV mitigation methods are determined to improve their effectiveness. Simulation results indicate that the user–defined VCB model can satisfactorily simulate prestrikes and the proposed component models display HF characteristics, which are consistent with onsite measurement behaviors. Moreover, the employed protection methods can suppress induced SOVs, which have a steep front, a high oscillation frequency and a high amplitude, among which the smart choke presents a preferable HF damping effect.

  18. A MEMS-based high frequency x-ray chopper

    Energy Technology Data Exchange (ETDEWEB)

    Siria, A; Schwartz, W; Chevrier, J [Institut Neel, CNRS-Universite Joseph Fourier Grenoble, BP 166, F-38042 Grenoble Cedex 9 (France); Dhez, O; Comin, F [ESRF, 6 rue Jules Horowitz, F-38043 Grenoble Cedex 9 (France); Torricelli, G [Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom)

    2009-04-29

    Time-resolved x-ray experiments require intensity modulation at high frequencies (advanced rotating choppers have nowadays reached the kHz range). We here demonstrate that a silicon microlever oscillating at 13 kHz with nanometric amplitude can be used as a high frequency x-ray chopper. We claim that using micro-and nanoelectromechanical systems (MEMS and NEMS), it will be possible to achieve higher frequencies in excess of hundreds of megahertz. Working at such a frequency can open a wealth of possibilities in chemistry, biology and physics time-resolved experiments.

  19. High Accelerating Field Superconducting Radio Frequency Cavities

    Science.gov (United States)

    Orr, R. S.; Saito, K.; Furuta, F.; Saeki, T.; Inoue, H.; Morozumi, Y.; Higo, T.; Higashi, Y.; Matsumoto, H.; Kazakov, S.; Yamaoka, H.; Ueno, K.; Sato, M.

    2008-06-01

    We have conducted a study of a series of single cell superconducting RF cavities at KEK. These tests were designed to investigate the effect of surface treatment on the maximum accelerating field attainable. All of these cavities are of the ICHIRO shape, based on the Low Loss shape. Our results indicate that accelerating fields as high as the theoretical maximum of 50MV/m are attainable.

  20. RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric

    NARCIS (Netherlands)

    Schmitz, Jurriaan; Cubaynes, F.N; Cubaynes, F.N.; Havens, R.J.; de Kort, R.; Scholten, A.J.; Tiemeijer, L.F.

    2003-01-01

    We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter

  1. Improving mental task classification by adding high frequency band information.

    Science.gov (United States)

    Zhang, Li; He, Wei; He, Chuanhong; Wang, Ping

    2010-02-01

    Features extracted from delta, theta, alpha, beta and gamma bands spanning low frequency range are commonly used to classify scalp-recorded electroencephalogram (EEG) for designing brain-computer interface (BCI) and higher frequencies are often neglected as noise. In this paper, we implemented an experimental validation to demonstrate that high frequency components could provide helpful information for improving the performance of the mental task based BCI. Electromyography (EMG) and electrooculography (EOG) artifacts were removed by using blind source separation (BSS) techniques. Frequency band powers and asymmetry ratios from the high frequency band (40-100 Hz) together with those from the lower frequency bands were used to represent EEG features. Finally, Fisher discriminant analysis (FDA) combining with Mahalanobis distance were used as the classifier. In this study, four types of classifications were performed using EEG signals recorded from four subjects during five mental tasks. We obtained significantly higher classification accuracy by adding the high frequency band features compared to using the low frequency bands alone, which demonstrated that the information in high frequency components from scalp-recorded EEG is valuable for the mental task based BCI.

  2. Chaos in high-power high-frequency gyrotrons

    International Nuclear Information System (INIS)

    Airila, M.

    2004-01-01

    Gyrotron interaction is a complex nonlinear dynamical process, which may turn chaotic in certain circumstances. The emergence of chaos renders dynamical systems unpredictable and causes bandwidth broadening of signals. Such effects would jeopardize the prospect of advanced gyrotrons in fusion. Therefore, it is important to be aware of the possibility of chaos in gyrotrons. There are three different chaos scenarios closely related to the development of high-power gyrotrons: First, the onset of chaos in electron trajectories would lead to difficulties in the design and efficient operation of depressed potential collectors, which are used for efficiency enhancement. Second, the radio-frequency signal could turn chaotic, decreasing the output power and the spectral purity of the output signal. As a result, mode conversion, transmission, and absorption efficiencies would be reduced. Third, spatio-temporal chaos in the resonator field structure can set a limit for the use of large-diameter interaction cavities and high-order TE modes (large azimuthal index) allowing higher generated power. In this thesis, the issues above are addressed with numerical modeling. It is found that chaos in electron residual energies is practically absent in the parameter region corresponding to high efficiency. Accordingly, depressed collectors are a feasible solution also in advanced high-power gyrotrons. A new method is presented for straightforward numerical solution of the one-dimensional self-consistent time-dependent gyrotron equations, and the method is generalized to two dimensions. In 1D, a chart of gyrotron oscillations is calculated. It is shown that the regions of stationary oscillations, automodulation, and chaos have a complicated topology in the plane of generalized gyrotron variables. The threshold current for chaotic oscillations exceeds typical operating currents by a factor of ten. However, reflection of the output signal may significantly lower the threshold. 2D

  3. High performance unipolar inverters by utilizing organic field-effect transistors with ultraviolet/ozone treated polystyrene dielectric

    International Nuclear Information System (INIS)

    Huang, Wei; Yu, Xinge; Fan, Huidong; Yu, Junsheng

    2014-01-01

    High performance unipolar inverters based on a significant variation of threshold voltage (V th ) of organic field-effect transistors (OFETs), which was realized by introducing UV/ozone (UVO) treatment to polystyrene (PS) dielectric, were fabricated. A controllable V th shift of more than 10 V was obtained in the OFETs by adjusting the UVO treating time, and the unipolar inverters exhibited inverting voltage near 1/2 driving voltage and a noise margin of more than 70% of ideal value. From the analysis of scanning electron microscopy, atom force microscopy, and X-ray photoelectron spectroscopy, the dramatic controllable V th of OFETs, which played a key role in high performance unipolar inverters, was attributed to the newly generated oxygen functional groups in the PS dielectric induced by UVO treatment.

  4. High frequency characterization of Galfenol minor flux density loops

    Directory of Open Access Journals (Sweden)

    Ling Weng

    2017-05-01

    Full Text Available This paper presents the first measurement of ring-shaped Galfenol’s high frequency-dependent minor flux density loops. The frequencies of applied AC magnetic field are 1k, 5k, 10k, 50k, 100k, 200k, 300k, 500 kHz. The measurements show that the cycle area between the flux density and magnetic field curves increase with increasing frequency. High frequency-dependent characterization, including coercivity, specific power loss, residual induction, and maximum relative permeability are discussed. Minor loops for different max induction are also measured and discussed at the same frequency 100 kHz. Minor loops with the same max induction 0.05 T for different frequencies 50, 100, 200, 300, 400 kHz are measured and specific power loss are discussed.

  5. MEMS based fabrication of high-frequency integrated inductors on Ni–Cu–Zn ferrite substrates

    Energy Technology Data Exchange (ETDEWEB)

    Anthony, Ricky, E-mail: ricky.anthony@tyndall.ie; Wang, Ningning, E-mail: ning.wang@tyndall.ie; Casey, Declan P.; Ó Mathúna, Cian; Rohan, James F.

    2016-05-15

    A surface micro-machining process is described to realize planar inductors on ferrite (Ni{sub 0.49}Zn{sub 0.33}Cu{sub 0.18} Fe{sub 2}O{sub 4}) for high-frequency applications (<30 MHz). The highly resistive nature (~10{sup 8} Ω m) of the Ni–Cu–Zn substrate allows direct conductor patterning by electroplating of Cu windings through a photoresist mold on a sputtered seed layer and eliminates the need for a dielectric layer to isolate the windings from the bottom magnetic core. Measured inductances~367 nH (DC resistance~1.16 Ω and Q-value>14 at 30 MHz) and ~244 nH (DC resistance~0.86 Ω and Q-value~18 at 30 MHz) at 1 MHz for elongated racetrack (10.75 nH/mm{sup 2}) and racetrack inductors (12.5 nH/mm{sup 2}), respectively show good agreement with simulated finite element method analysis. This device can be integrated with power management ICs PMICs for cost-effective, high-performance realization of power-supply in package (PSiP) or on-chip (PSoC). This simple process lays the foundation for fabricating closed core ferrite nano-crystalline core micro-inductors. - Graphical abstract: Material Characterization of Ni–Cu–Zn ferrite substrate and process developed for on-ferrite integrated micro-inductor fabrication. - Highlights: • High-frequency microinductors have been fabricated on Ni-Cu-Zn substrates. • High-resistive ferrite substrates assist direct conductor patterning on the surface. • Uniform inductances ~365 nH over 30 MHz frequency have been achieved. • High Q-values (>18 at 30 MHz) attained are applicable for high-frequency DC–DC conversion applications. • The described process lays the foundation for fabricating closed core ferrite nano-crystalline core.

  6. High-frequency multimodal atomic force microscopy

    Directory of Open Access Journals (Sweden)

    Adrian P. Nievergelt

    2014-12-01

    Full Text Available Multifrequency atomic force microscopy imaging has been recently demonstrated as a powerful technique for quickly obtaining information about the mechanical properties of a sample. Combining this development with recent gains in imaging speed through small cantilevers holds the promise of a convenient, high-speed method for obtaining nanoscale topography as well as mechanical properties. Nevertheless, instrument bandwidth limitations on cantilever excitation and readout have restricted the ability of multifrequency techniques to fully benefit from small cantilevers. We present an approach for cantilever excitation and deflection readout with a bandwidth of 20 MHz, enabling multifrequency techniques extended beyond 2 MHz for obtaining materials contrast in liquid and air, as well as soft imaging of delicate biological samples.

  7. High quality factor gigahertz frequencies in nanomechanical diamond resonators

    OpenAIRE

    Gaidarzhy, Alexei; Imboden, Matthias; Mohanty, Pritiraj; Rankin, Janet; Sheldon, Brian W.

    2007-01-01

    We report actuation and detection of gigahertz-range resonance frequencies in nano-crystalline diamond mechanical resonators. High order transverse vibration modes are measured in coupled-beam resonators exhibiting frequencies up to 1.441 GHz. The cantilever-array design of the resonators translates the gigahertz-range resonant motion of micron-long cantilever elements to the displacement of the central supporting structure. Use of nano-crystalline diamond further increases the frequency comp...

  8. Highly stable and imperceptible electronics utilizing photoactivated heterogeneous sol-gel metal-oxide dielectrics and semiconductors.

    Science.gov (United States)

    Jo, Jeong-Wan; Kim, Jaekyun; Kim, Kyung-Tae; Kang, Jin-Gu; Kim, Myung-Gil; Kim, Kwang-Ho; Ko, Hyungduk; Kim, Jiwan; Kim, Yong-Hoon; Park, Sung Kyu

    2015-02-18

    Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates.

    Science.gov (United States)

    Chen, Jianyi; Guo, Yunlong; Jiang, Lili; Xu, Zhiping; Huang, Liping; Xue, Yunzhou; Geng, Dechao; Wu, Bin; Hu, Wenping; Yu, Gui; Liu, Yunqi

    2014-03-05

    By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 μm. The carrier mobility can reach about 5650 cm(2) V(-1) s(-1) , which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Differential Thermal Analysis and Dielectric Studies on 2-Methyl-2-Nitro-Propane under High Pressure

    Science.gov (United States)

    Büsing, D.; Jenau, M.; Reuter, J.; Würflinger, A.; Tamarit, J. Li.

    1995-05-01

    Differential thermal analysis and dielectric studies under pressures up to 300 MPa and temperatures of about 200 to 350 K have been performed on 2-methyl-2-nitro-propane (TBN). TBN displays an orientationally disordered phase (ODIC), solid I, and two non-plastic phases, solids II and III. The coexistence region of the plastic phase I increases with increasing pressure, whereas the low-temperature phase II apparently vanishes at a triple point I, II, III, above 300 MPa. The static permittivity increases on freezing, characterizing the solid I as an ODIC phase. In the frame of the Kirkwood-Onsager-Fröhlich theory the g-factor is about unity, discounting specific dielectric correlations. The dielectric behaviour of TBN is similar to previously studied related compounds, such as 2-chloro-2-methyl-propane or 2-brome- 2-methyl-propane

  11. High-frequency energy in singing and speech

    Science.gov (United States)

    Monson, Brian Bruce

    While human speech and the human voice generate acoustical energy up to (and beyond) 20 kHz, the energy above approximately 5 kHz has been largely neglected. Evidence is accruing that this high-frequency energy contains perceptual information relevant to speech and voice, including percepts of quality, localization, and intelligibility. The present research was an initial step in the long-range goal of characterizing high-frequency energy in singing voice and speech, with particular regard for its perceptual role and its potential for modification during voice and speech production. In this study, a database of high-fidelity recordings of talkers was created and used for a broad acoustical analysis and general characterization of high-frequency energy, as well as specific characterization of phoneme category, voice and speech intensity level, and mode of production (speech versus singing) by high-frequency energy content. Directionality of radiation of high-frequency energy from the mouth was also examined. The recordings were used for perceptual experiments wherein listeners were asked to discriminate between speech and voice samples that differed only in high-frequency energy content. Listeners were also subjected to gender discrimination tasks, mode-of-production discrimination tasks, and transcription tasks with samples of speech and singing that contained only high-frequency content. The combination of these experiments has revealed that (1) human listeners are able to detect very subtle level changes in high-frequency energy, and (2) human listeners are able to extract significant perceptual information from high-frequency energy.

  12. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with highdielectric showing room-temperature mobility > 11 000 cm2/V·s

    KAUST Repository

    Smith, Casey

    2013-07-23

    Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled highdielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

  13. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with highdielectric showing room-temperature mobility > 11 000 cm2/V·s

    KAUST Repository

    Smith, Casey; Qaisi, Ramy M.; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

    2013-01-01

    Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled highdielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

  14. The Influence of High-Frequency Envelope Information on Low-Frequency Vowel Identification in Noise.

    Directory of Open Access Journals (Sweden)

    Wiebke Schubotz

    Full Text Available Vowel identification in noise using consonant-vowel-consonant (CVC logatomes was used to investigate a possible interplay of speech information from different frequency regions. It was hypothesized that the periodicity conveyed by the temporal envelope of a high frequency stimulus can enhance the use of the information carried by auditory channels in the low-frequency region that share the same periodicity. It was further hypothesized that this acts as a strobe-like mechanism and would increase the signal-to-noise ratio for the voiced parts of the CVCs. In a first experiment, different high-frequency cues were provided to test this hypothesis, whereas a second experiment examined more closely the role of amplitude modulations and intact phase information within the high-frequency region (4-8 kHz. CVCs were either natural or vocoded speech (both limited to a low-pass cutoff-frequency of 2.5 kHz and were presented in stationary 3-kHz low-pass filtered masking noise. The experimental results did not support the hypothesized use of periodicity information for aiding low-frequency perception.

  15. The Influence of High-Frequency Envelope Information on Low-Frequency Vowel Identification in Noise.

    Science.gov (United States)

    Schubotz, Wiebke; Brand, Thomas; Kollmeier, Birger; Ewert, Stephan D

    2016-01-01

    Vowel identification in noise using consonant-vowel-consonant (CVC) logatomes was used to investigate a possible interplay of speech information from different frequency regions. It was hypothesized that the periodicity conveyed by the temporal envelope of a high frequency stimulus can enhance the use of the information carried by auditory channels in the low-frequency region that share the same periodicity. It was further hypothesized that this acts as a strobe-like mechanism and would increase the signal-to-noise ratio for the voiced parts of the CVCs. In a first experiment, different high-frequency cues were provided to test this hypothesis, whereas a second experiment examined more closely the role of amplitude modulations and intact phase information within the high-frequency region (4-8 kHz). CVCs were either natural or vocoded speech (both limited to a low-pass cutoff-frequency of 2.5 kHz) and were presented in stationary 3-kHz low-pass filtered masking noise. The experimental results did not support the hypothesized use of periodicity information for aiding low-frequency perception.

  16. Ferroelectric dielectrics integrated on silicon

    CERN Document Server

    Defay, Emmanuel

    2013-01-01

    This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterizat

  17. Design and development of ITER high-frequency magnetic sensor

    NARCIS (Netherlands)

    Ma, Y.; Vayakis, G.; Begrambekov, L. B.; Cooper, J.J.; Duran, I.; Hirsch, M.; Laqua, H.P.; Moreau, Ph.; Oosterbeek, J.W.; Spuig, P.; Stange, T.; Walsh, M.

    2016-01-01

    High-frequency (HF) inductive magnetic sensors are the primary ITER diagnostic set for Toroidal Alfvén Eigenmodes (TAE) detection, while they also supplement low-frequency MHD and plasma equilibrium measurements. These sensors will be installed on the inner surface of ITER vacuum vessel, operated in

  18. Dielectric Optical Antenna Emitters and Metamaterials

    Science.gov (United States)

    Schuller, Jon

    2009-03-01

    Optical antennas are critical components in nanophotonics research due to their unparalleled ability to concentrate electromagnetic energy into nanoscale volumes. Researchers typically construct such antennas from wavelength-size metallic structures. However, recent research has begun to exploit the scattering resonances of high-permittivity particles to realize all-dielectric optical antennas, emitters, and metamaterials. In this talk, we experimentally and theoretically characterize the resonant modes of subwavelength rod-shaped dielectric particles and demonstrate their use in negative index metamaterials and novel infrared light emitters. At mid-infrared frequencies, Silicon Carbide (SiC) is an ideal system for studying the behavior of dielectric optical antennas. At frequencies below the TO phonon resonance, SiC behaves like a dielectric with very large refractive index. Using infrared spectroscopy and analytical Mie calculations we show that individual rod-shaped SiC particles exhibit a multitude of resonant modes. Detailed investigations of these SiC optical antennas reveal a wealth of new physics and applications. We discuss the distinct electromagnetic field profile for each mode, and demonstrate that two of the dielectric-type Mie resonances can be combined in a particle array to form a negative index metamaterial [1]. We further show that these particles can serve as ``broadcasting'' antennas. Using a custom-built thermal emission microscope we collect emissivity spectra from single SiC particles at elevated temperatures, highlighting their use as subwavelength resonant light emitters. Finally, we derive and verify a variety of general analytical results applicable to all cylindrical dielectric antennas and discuss extensions of the demonstrated concepts to different materials systems and frequency regimes. [1] J.A. Schuller, et al., Phys. Rev. Lett. 99, 107401 (2007)

  19. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Directory of Open Access Journals (Sweden)

    Murali Gedda

    2013-11-01

    Full Text Available Polyvinyl alcohol (PVA and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc wire base field-effect transistors (OFETs. CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  20. Effect of grain size on structural and dielectric properties of barium titanate piezoceramics synthesized by high energy ball milling

    Science.gov (United States)

    Verma, Narendra Kumar; Patel, Sandeep Kumar Singh; Kumar, Dinesh; Singh, Chandra Bhal; Singh, Akhilesh Kumar

    2018-05-01

    We have investigated the effect of sintering temperature on the densification behaviour, grain size, structural and dielectric properties of BaTiO3 ceramics, prepared by high energy ball milling method. The Powder x-ray diffraction reveals the tetragonal structure with space group P4mm for all the samples. The samples were sintered at four different temperatures, (T = 900°C, 1000°C, 1100°C, 1200°C and 1300°C). Density increased with increasing sintering temperature, reaching up to 97% at 1300°C. A grain growth was observed with increasing sintering temperature. Impedance analyses of the sintered samples at various temperatures were performed. Increase in dielectric constant and Curie temperature is observed with increasing sintering temperature.

  1. Studies of Electrolytic Conductivity of Some Polyelectrolyte Solutions: Importance of the Dielectric Friction Effect at High Dilution

    Directory of Open Access Journals (Sweden)

    Anis Ghazouani

    2013-01-01

    Full Text Available We present a general description of conductivity behavior of highly charged strong polyelectrolytes in dilute aqueous solutions taking into account the translational dielectric friction on the moving polyions modeled as chains of charged spheres successively bounded and surrounded by solvent molecules. A general formal limiting expression of the equivalent conductivity of these polyelectrolytes is presented in order to distinguish between two concentration regimes and to evaluate the relative interdependence between the ionic condensation effect and the dielectric friction effect, in the range of very dilute solutions for which the stretched conformation is favored. This approach is illustrated by the limiting behaviors of three polyelectrolytes (sodium heparinate, sodium chondroitin sulfate, and sodium polystyrene sulphonate characterized by different chain lengths and by different discontinuous charge distributions.

  2. Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10 −5 A/cm 2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D it ) is estimated to be as low as ∼2 × 10 12  cm −2  eV −1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D it value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications

  3. High-resolution nondestructive testing of multilayer dielectric materials using wideband microwave synthetic aperture radar imaging

    Science.gov (United States)

    Kim, Tae Hee; James, Robin; Narayanan, Ram M.

    2017-04-01

    Fiber Reinforced Polymer or Plastic (FRP) composites have been rapidly increasing in the aerospace, automotive and marine industry, and civil engineering, because these composites show superior characteristics such as outstanding strength and stiffness, low weight, as well as anti-corrosion and easy production. Generally, the advancement of materials calls for correspondingly advanced methods and technologies for inspection and failure detection during production or maintenance, especially in the area of nondestructive testing (NDT). Among numerous inspection techniques, microwave sensing methods can be effectively used for NDT of FRP composites. FRP composite materials can be produced using various structures and materials, and various defects or flaws occur due to environmental conditions encountered during operation. However, reliable, low-cost, and easy-to-operate NDT methods have not been developed and tested. FRP composites are usually produced as multilayered structures consisting of fiber plate, matrix and core. Therefore, typical defects appearing in FRP composites are disbondings, delaminations, object inclusions, and certain kinds of barely visible impact damages. In this paper, we propose a microwave NDT method, based on synthetic aperture radar (SAR) imaging algorithms, for stand-off imaging of internal delaminations. When a microwave signal is incident on a multilayer dielectric material, the reflected signal provides a good response to interfaces and transverse cracks. An electromagnetic wave model is introduced to delineate interface widths or defect depths from the reflected waves. For the purpose of numerical analysis and simulation, multilayered composite samples with various artificial defects are assumed, and their SAR images are obtained and analyzed using a variety of high-resolution wideband waveforms.

  4. Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon

    Science.gov (United States)

    Kirsch, Paul Daniel

    Surfaces and interfaces play a critical role in the manufacture and function of silicon based integrated circuits. It is therefore reasonable to study the chemistries at these surfaces and interfaces to improve existing processes and to develop new ones. Model barium strontium titanate high-k dielectric systems have been deposited on ultrathin silicon oxynitride in ultrahigh vacuum. The resulting nanostructures are characterized with secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). An interfacial reaction between Ba and Sr atoms and SiOxNy was found to create silicates, BaSixOy or SrSi xOy. Inclusion of N in the interfacial oxide decreased silicate formation in both Ba and Sr systems. Furthermore, inclusion of N in the interfacial oxide decreased the penetration of Ba and Sr containing species, such as silicides and silicates. Sputter deposited HfO2 was studied on nitrided and unnitrided Si(100) surfaces. XPS and SIMS were used to verify the presence of interfacial HfSixOy and estimate its relative amount on both nitrided and unnitrided samples. More HfSixOy formed without the SiNx interfacial layer. These interfacial chemistry results are then used to explain the electrical measurements obtained from metal oxide semiconductor (MOS) capacitors. MOS capacitors with interfacial SiNx exhibit reduced leakage current and increased capacitance. Lastly, surface science techniques were used to develop a processing technique for reducing thin films of copper (II) and copper (I) oxide to copper. Deuterium atoms (D*) and methyl radicals (CH3*) were shown to reduce Cu 2+ and/or Cu1+ to Cu0 within 30 min at a surface temperature of 400 K under a flux of 1 x 1015 atoms/cm2s. Temperature programmed desorption experiments suggest that oxygen leaves the surface as D2O and CO2 for the D* and CH3* treated surfaces, respectively.

  5. Glycerol as high-permittivity liquid filler in dielectric silicone elastomers

    DEFF Research Database (Denmark)

    Mazurek, Piotr Stanislaw; Yu, Liyun; Skov, Anne Ladegaard

    of the composite. In combination with very low cost and easy preparation, the two property enhancements lead to a very attractive dielectric elastomer material. Experimental permittivity data are compared to various theoretical models that predict relative-permittivity changes as a function of filler loading...

  6. High temperature dielectric relaxation anomaly of Y3+ and Mn2+ doped barium strontium titanate ceramics

    International Nuclear Information System (INIS)

    Yan, Shiguang; Mao, Chaoliang; Wang, Genshui; Yao, Chunhua; Cao, Fei; Dong, Xianlin

    2014-01-01

    Relaxation like dielectric anomaly is observed in Y 3+ and Mn 2+ doped barium strontium titanate ceramics when the temperature is over 450 K. Apart from the conventional dielectric relaxation analysis method with Debye or modified Debye equations, which is hard to give exact temperature dependence of the relaxation process, dielectric response in the form of complex impedance, assisted with Cole-Cole impedance model corrected equivalent circuits, is adopted to solve this problem and chase the polarization mechanism in this paper. Through this method, an excellent description to temperature dependence of the dielectric relaxation anomaly and its dominated factors are achieved. Further analysis reveals that the exponential decay of the Cole distribution parameter n with temperature is confirmed to be induced by the microscopic lattice distortion due to ions doping and the interaction between the defects. At last, a clear sight to polarization mechanism containing both the intrinsic dipolar polarization and extrinsic distributed oxygen vacancies hopping response under different temperature is obtained.

  7. Oscillatory shear and high-pressure dielectric study of 5-methyl-3-heptanol

    DEFF Research Database (Denmark)

    Hecksher, Tina; Jakobsen, Bo; Dyre, J. C.

    2014-01-01

    The monohydroxy alcohol 5-methyl-3-heptanol is studied using rheology at ambient pressure and using dielectric spectroscopy at elevated pressures up to 1.03 GPa. Both experimental techniques reveal that the relaxational behavior of this liquid is intermediate between those that show a large Debye...

  8. Investigation of the dielectric recovery in synthetic air in a high voltage circuit breaker

    International Nuclear Information System (INIS)

    Seeger, M; Naidis, G; Steffens, A; Nordborg, H; Claessens, M

    2005-01-01

    The dielectric recovery of an axially blown arc in an experimental set-up based on a conventional HV circuit breaker was investigated both experimentally and theoretically. As a quenching gas, synthetic air was used. The investigated time range was from 10 μs to 10 ms after current zero (CZ). A fast rise in the dielectric strength during the first 100 μs, followed by a plateau and further rise later was observed. The dependences on the breaking current and pressure were determined. The measured dielectric recovery during the first 100 μs after CZ could be reproduced with good accuracy by computational fluid dynamics simulations. From that it could be deduced that the temperature decay in the axis does not depend sensitively on the pressure. The dielectric recovery during the first 100 μs scales therefore mainly with the filling pressure. The plateau in the breakdown characteristic is due to a hot vapour layer from the still evaporating PTFE nozzle surface

  9. Glycerol as high-permittivity liquid filler in dielectric silicone elastomers

    DEFF Research Database (Denmark)

    Mazurek, Piotr Stanislaw; Yu, Liyun; Gerhard, R.

    2016-01-01

    A recently reported novel class of elastomers was tested with respect to its dielectric properties. The new elastomer materialis based on a commercially available poly(dimethylsiloxane) composition, which has been modified by embedding glycerol droplets intoits matrix. The approach has two major ......, and the applicability ofthe models is discussed. VC 2016 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2016, 133, 44153....

  10. High frequency and microwave technology in the food industry

    International Nuclear Information System (INIS)

    Rochas, J.F.

    1990-01-01

    After a brief description of the dielectric theory, the author explains why the dielectric behaviour of food materials depends mainly on the properties of the water associated with the biological material. The practical consequences of this behaviour on the progress of a drying operation and on the quality of the final product are also discussed

  11. High density terahertz frequency comb produced by coherent synchrotron radiation

    Science.gov (United States)

    Tammaro, S.; Pirali, O.; Roy, P.; Lampin, J.-F.; Ducournau, G.; Cuisset, A.; Hindle, F.; Mouret, G.

    2015-07-01

    Frequency combs have enabled significant progress in frequency metrology and high-resolution spectroscopy extending the achievable resolution while increasing the signal-to-noise ratio. In its coherent mode, synchrotron radiation is accepted to provide an intense terahertz continuum covering a wide spectral range from about 0.1 to 1 THz. Using a dedicated heterodyne receiver, we reveal the purely discrete nature of this emission. A phase relationship between the light pulses leads to a powerful frequency comb spanning over one decade in frequency. The comb has a mode spacing of 846 kHz, a linewidth of about 200 Hz, a fractional precision of about 2 × 10-10 and no frequency offset. The unprecedented potential of the comb for high-resolution spectroscopy is demonstrated by the accurate determination of pure rotation transitions of acetonitrile.

  12. High Energy Single Frequency Resonant Amplifier, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR phase I project proposes a single frequency high energy resonant amplifier for remote sensing. Current state-of-art technologies can not provide all...

  13. Oscillographic Chronopotentiometry with High and Low Frequency Current

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    A novel electroanalytical method, oscillographic chronopotentiometry with high and low frequency current, is presented in this paper. With this method, the sensitivity of almost all kinds of oscillographic chronopotentiometry can be enhanced about one order.

  14. High-Frequency Microwave Processing of Materials Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Conducts research on high-frequency microwave processing of materials using a highpower, continuous-wave (CW), 83-GHz, quasi-optical beam system for rapid,...

  15. High-frequency matrix converter with square wave input

    Science.gov (United States)

    Carr, Joseph Alexander; Balda, Juan Carlos

    2015-03-31

    A device for producing an alternating current output voltage from a high-frequency, square-wave input voltage comprising, high-frequency, square-wave input a matrix converter and a control system. The matrix converter comprises a plurality of electrical switches. The high-frequency input and the matrix converter are electrically connected to each other. The control system is connected to each switch of the matrix converter. The control system is electrically connected to the input of the matrix converter. The control system is configured to operate each electrical switch of the matrix converter converting a high-frequency, square-wave input voltage across the first input port of the matrix converter and the second input port of the matrix converter to an alternating current output voltage at the output of the matrix converter.

  16. Instrumentation for high-frequency meteorological observations from research vessel

    Digital Repository Service at National Institute of Oceanography (India)

    VijayKumar, K.; Khalap, S.; Mehra, P.

    Ship provides an attractive platform from which high-frequency meteorological observations (e.g., wind components, water vapor density, and air temperature) can be made accurately. However, accurate observations of meteorological variables depend...

  17. Computation of High-Frequency Waves with Random Uncertainty

    KAUST Repository

    Malenova, Gabriela; Motamed, Mohammad; Runborg, Olof; Tempone, Raul

    2016-01-01

    or nonlinear functionals of the wave solution and its spatial/temporal derivatives. The numerical scheme combines two techniques: a high-frequency method based on Gaussian beams [2, 3], a sparse stochastic collocation method [4]. The fast spectral

  18. Ozone production in a dielectric barrier discharge with ultrasonic irradiation

    DEFF Research Database (Denmark)

    Drews, Joanna Maria; Kusano, Yukihiro; Leipold, Frank

    2011-01-01

    Ozone production has been investigated using an atmospheric pressure dielectric barrier discharge in pure O2 at room temperature with and without ultrasonic irradiation. It was driven at a frequency of either 15 kHz or 40 kHz. The ozone production was highly dependent on the O2 flow rate and the ......Ozone production has been investigated using an atmospheric pressure dielectric barrier discharge in pure O2 at room temperature with and without ultrasonic irradiation. It was driven at a frequency of either 15 kHz or 40 kHz. The ozone production was highly dependent on the O2 flow rate...

  19. Development of a dielectric ceramic based on diatomite-titania part two: dielectric properties characterization

    Directory of Open Access Journals (Sweden)

    Medeiros Jamilson Pinto

    1998-01-01

    Full Text Available Dielectric properties of sintered diatomite-titania ceramics are presented. Specific capacitance, dissipation factor, quality factor and dielectric constant were determined as a function of sintering temperature, titania content and frequency; the temperature coefficient of capacitance was measured as a function of frequency. Besides leakage current, the dependence of the insulation resistance and the dielectric strength on the applied dc voltage were studied. The results show that diatomite-titania compositions can be used as an alternative dielectric.

  20. PREFACE: Dielectrics 2009: Measurement Analysis and Applications

    Science.gov (United States)

    Vaughan, Alun; Williams, Graham

    2009-07-01

    College, Dublin. The Meeting discussed dielectric relaxation behaviour arising from molecular motions of dipolar molecules in the liquid and elastomeric states (now known as soft condensed matter) with measurements spanning a frequency range from a few Hz, through power and radiofrequencies, UHF and VHF, the microwave range and into the far infra-red. As a result of its success, it was decided at the Meeting that a continuing Dielectrics Discussion Group would be established to meet not more frequently than once a year. It was appreciated at the time that the subject of 'Dielectrics' covered many sub-areas, broadly classified into those of polarization, relaxation, conduction and high-field phenomena. For the DDG, a solution was to run annual meetings on chosen themes in dielectrics research, where the theme would change from one meeting to the next. Topics addressed in the early years of the DDG included high field phenomena and impurity effects, heterogeneous systems and biomaterials, polarization and conduction and non-linear dielectrics and ferroelectrics. The number of participants at these early meetings grew from 50 to the low 100's, which reflected both the increased awareness of the Group and increased participation from researchers in Continental Europe. However, the majority of participants in this period were from the UK, which reflected the considerable activities in dielectrics research in University, Industry and Government laboratories in the UK. There followed a series of DDG Meetings until 1974, at which point, the DDG became a registered charity: The Dielectrics Society. Many of the earlier meetings were held in the attractive and convenient venues of Oxford and Cambridge colleges but, in the early 1990's, a new venue for the meetings was established at the University of Kent at Canterbury. In 2001, the next major change occurred when The Dielectrics Society was incorporated into the Institute of Physics, becoming their Dielectrics Group. From 1968 to