WorldWideScience

Sample records for high fluence ion-irradiation

  1. High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Finzel, A.; Gerlach, J.W., E-mail: juergen.gerlach@iom-leipzig.de; Lorbeer, J.; Frost, F.; Rauschenbach, B.

    2014-10-30

    Highlights: • Irradiation of gallium nitride films with hyperthermal nitrogen ions. • Surface roughening at elevated sample temperatures was observed. • No thermal decomposition of gallium nitride films during irradiation. • Asymmetric surface diffusion processes cause local roughening. - Abstract: Wurtzitic GaN films deposited on 6H-SiC(0001) substrates by ion-beam assisted molecular-beam epitaxy were irradiated with hyperthermal nitrogen ions with different fluences at different substrate temperatures. In situ observations with reflection high energy electron diffraction showed that during the irradiation process the surface structure of the GaN films changed from two dimensional to three dimensional at elevated temperatures, but not at room temperature. Atomic force microscopy revealed an enhancement of nanometric holes and canyons upon the ion irradiation at higher temperatures. The roughness of the irradiated and heated GaN films was clearly increased by the ion irradiation in accordance with x-ray reflectivity measurements. A sole thermal decomposition of the films at the chosen temperatures could be excluded. The results are discussed taking into account temperature dependent sputtering and surface uphill adatom diffusion as a function of temperature.

  2. Surface damage on polycrystalline β-SiC by xenon ion irradiation at high fluence

    Science.gov (United States)

    Baillet, J.; Gavarini, S.; Millard-Pinard, N.; Garnier, V.; Peaucelle, C.; Jaurand, X.; Duranti, A.; Bernard, C.; Rapegno, R.; Cardinal, S.; Escobar Sawa, L.; De Echave, T.; Lanfant, B.; Leconte, Y.

    2018-05-01

    Polycrystalline β-silicon carbide (β-SiC) pellets were prepared by Spark Plasma Sintering (SPS). These were implanted at room temperature with 800 keV xenon at ion fluences of 5.1015 and 1.1017 cm-2. Microstructural modifications were studied by electronic microscopy (TEM and SEM) and xenon profiles were determined by Rutherford Backscattering Spectroscopy (RBS). A complete amorphization of the implanted area associated with a significant oxidation is observed for the highest fluence. Large xenon bubbles formed in the oxide phase are responsible of surface swelling. No significant gas release has been measured up to 1017 at.cm-2. A model is proposed to explain the different steps of the oxidation process and xenon bubbles formation as a function of ion fluence.

  3. Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

    Science.gov (United States)

    Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Kim, Hak; Phan, Anthony; Seidleck, Christina; LaBel, Kenneth

    2016-01-01

    We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

  4. Surface damage on 6H–SiC by highly-charged Xeq+ ions irradiation

    International Nuclear Information System (INIS)

    Zhang, L.Q.; Zhang, C.H.; Han, L.H.; Xu, C.L.; Li, J.J.; Yang, Y.T.; Song, Y.; Gou, J.; Li, J.Y.; Ma, Y.Z.

    2014-01-01

    Surface damage on 6H–SiC irradiated by highly-charged Xe q+ (q = 18, 26) ions to different fluences in two geometries was studied by means of AFM, Raman scattering spectroscopy and FTIR spectrometry. The FTIR spectra analysis shows that for Xe 26+ ions irradiation at normal incidence, a deep reflection dip appears at about 930 cm −1 . Moreover, the reflectance on top of reststrahlen band decreases as the ion fluence increases, and the reflectance at tilted incidence is larger than that at normal incidence. The Raman scattering spectra reveal that for Xe 26+ ions at normal incidence, surface reconstruction occurs and amorphous stoichiometric SiC and Si–Si and C–C bonds are generated and original Si–C vibrational mode disappears. And the intensity of scattering peaks decreases with increasing dose. The AFM measurement shows that the surface swells after irradiation. With increasing ion fluence, the step height between the irradiated and the unirradiated region increases for Xe 18+ ions irradiation; while for Xe 26+ ions irradiation, the step height first increases and then decreases with increasing ion fluence. Moreover, the step height at normal incidence is higher than that at tilted incidence by the irradiation with Xe 18+ to the same ion fluence. A good agreement between the results from the three methods is found

  5. Planar waveguide structure formed on Nd:YVO{sub 4} by Kr{sup 8+} ion irradiation at ultralow fluences

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lian; Liu, Peng; Liu, Tao; Zhou, Yu-Fan [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle and Particle Irradiation (MOE), Shandong University, Jinan 250100 (China); Sun, Jian-Rong; Wang, Zhi-Guang [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Wang, Xue-Lin, E-mail: xuelinwang@sdu.edu.cn [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle and Particle Irradiation (MOE), Shandong University, Jinan 250100 (China)

    2013-11-15

    We report on the fabrication of a planar waveguide structure on Nd:YVO{sub 4} laser crystal. The waveguide structure was formed by Kr{sup 8+} ion irradiation with energy of 30 MeV at fluences of 2 × 10{sup 12} cm{sup −2}. The guiding modes of the planar waveguide were measured by the prism-coupling method at wavelengths of 633 nm and 1539 nm. The reflectivity calculation method (RCM) was used to reconstruct the refractive index profiles. Relatively large positive changes in the ordinary refractive index occur in the waveguide region. The refractive index profile of the planar waveguide was a typical “well” + “barrier” distribution, and we used the finite-difference beam propagation method (FD-BPM) to simulate light propagation in the waveguide. Using the Stopping and Range of Ions in Matter (SRIM 2008) software, the energy loss during ion irradiation was simulated to obtain a better understanding of the formation of the waveguide structure. The investigation of the absorption bands demonstrated that the transmission properties of the bulk Nd:YVO{sub 4} crystal have been preserved after ion irradiation.

  6. Effect of He+ fluence on surface morphology and ion-irradiation induced defect evolution in 7075 aluminum alloys

    Science.gov (United States)

    Ni, Kai; Ma, Qian; Wan, Hao; Yang, Bin; Ge, Junjie; Zhang, Lingyu; Si, Naichao

    2018-02-01

    The evolution of microstructure for 7075 aluminum alloys with 50 Kev helium ions irradiation were studied by using optical microscopy (OM), scanning electron microscopy (SEM), x-ray diffraction (XRD) and transmission electron microscopy (TEM). The fluences of 1 × 1015, 1 × 1016 and 1 × 1017 ions cm-2 were selected, and irradiation experiments were conducted at room temperatures. The transmission process of He+ ions was simulated by using SRIM software, including distribution of ion ranges, energy losses and atomic displacements. Experimental results show that irradiated pits and micro-cracks were observed on irradiation sample surface, and the size of constituent particles (not including Mg2Si) decreased with the increasing dose. The x-ray diffraction results of the pair of peaks is better resolved in irradiated samples might indicate that the stressed structure consequence due to crystal defects (vacancies and interstitials) after He+ implantation. TEM observation indicated that the density of MgZn2 phase was significantly reduced after helium ion irradiation which is harmful to strength. Besides, the development of compressive stress produced a large amount of dislocation defects in the 1015 ions cm-2 sample. Moreover, higher fluence irradiation produced more dislocations in sample. At fluence of 1016 ions cm-2, dislocation wall formed by dislocation slip and aggregation in the interior of grains, leading to the refinement of these grains. As fluence increased to 1017 ions cm-2, dislocation loops were observed in pinned dislocation. Moreover, dislocation as effective defect sink, irradiation-induced vacancy defects aggregated to these sinks, and resulted in the formation of helium bubbles in dislocation.

  7. Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

    Science.gov (United States)

    Chen, Dakai; Wilcox, Edward; Ladbury, Raymond L.; Kim, Hak; Phan, Anthony; Seidleck, Christina; Label, Kenneth

    2016-01-01

    We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

  8. Using ion irradiation to make high-Tc Josephson junctions

    International Nuclear Information System (INIS)

    Bergeal, N.; Lesueur, J.; Sirena, M.; Faini, G.; Aprili, M.; Contour, J. P.; Leridon, B.

    2007-01-01

    In this article we describe the effect of ion irradiation on high-T c superconductor thin film and its interest for the fabrication of Josephson junctions. In particular, we show that these alternative techniques allow to go beyond most of the limitations encountered in standard junction fabrication methods, both in the case of fundamental and technological purposes. Two different geometries are presented: a planar one using a single high-T c film and a mesa one defined in a trilayer structure

  9. Production of nanodiamonds by high-energy ion irradiation of graphite at room temperature

    International Nuclear Information System (INIS)

    Daulton, T.L.; Kirk, M.A.; Lewis, R.S.; Rehn, L.E.

    2001-01-01

    It has previously been shown that graphite can be transformed into diamond by MeV electron and ion irradiation at temperatures above approximately 600 deg. C. However, there exists geological evidence suggesting that carbonaceous materials can be transformed to diamond by irradiation at substantially lower temperatures. For example, submicron-size diamond aggregates have been found in uranium-rich, Precambrian carbonaceous deposits that never experienced high temperature or pressure. To test if diamonds can be formed at lower irradiation temperatures, sheets of fine-grain polycrystalline graphite were bombarded at 20 deg. C with 350±50 MeV Kr ions to fluences of 6x10 12 cm -2 using the Argonne tandem linear accelerator system (ATLAS). Ion-irradiated (and unirradiated control) graphite specimens were then subjected to acid dissolution treatments to remove untransformed graphite and isolate diamonds that were produced; these acid residues were subsequently characterized by high-resolution and analytical electron microscopy. The acid residue of the ion-irradiated graphite was found to contain nanodiamonds, demonstrating that ion irradiation of graphite at ambient temperature can produce diamond. The diamond yield under our irradiation conditions is low, ∼0.01 diamonds/ion. An important observation that emerges from comparing the present result with previous observations of diamond formation during irradiation is that nanodiamonds form under a surprisingly wide range of irradiation conditions. This propensity may be related to the very small difference in the graphite and diamond free-energies coupled with surface-energy considerations that may alter the relative stability of diamond and graphite at nanometer sizes

  10. Phase stability and microstructures of high entropy alloys ion irradiated to high doses

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Songqin [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083 (China); Gao, Michael C. [National Energy Technology Laboratory, 1450 Queen Ave SW, Albany, OR, 97321 (United States); AECOM, P.O. Box 1959, Albany, OR, 97321 (United States); Yang, Tengfei [State Key Laboratory of Nuclear Physics and Technology, Center for Applied Physics and Technology, Peking University, Beijing, 100871 (China); Liaw, Peter K. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN, 37996 (United States); Zhang, Yong, E-mail: drzhangy@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083 (China)

    2016-11-15

    The microstructures of Al{sub x}CoCrFeNi (x = 0.1, 0.75 and 1.5 in molar ratio) high entropy alloys (HEAs) irradiated at room temperature with 3 MeV Au ions at the highest fluence of 105, 91, and 81 displacement per atom, respectively, were studied. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) analyses show that the initial microstructures and phase composition of all three alloys are retained after ion irradiation and no phase decomposition is observed. Furthermore, it is demonstrated that the disordered face-centered cubic (FCC) and disordered body-centered cubic (BCC) phases show much less defect cluster formation and structural damage than the NiAl-type ordered B2 phase. This effect is explained by higher entropy of mixing, higher defect formation/migration energies, substantially lower thermal conductivity, and higher atomic level stress in the disordered phases.

  11. Tuning the antiferromagnetic to ferromagnetic phase transition in FeRh thin films by means of low-energy/low fluence ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Heidarian, A.; Bali, R.; Grenzer, J.; Wilhelm, R.A.; Heller, R.; Yildirim, O.; Lindner, J.; Potzger, K.

    2015-09-01

    Ion irradiation induced modifications of the thermomagnetic properties of equiatomic FeRh thin films have been investigated. The application of 20 keV Ne{sup +} ions at different fluencies leads to broadening of the antiferromagnetic to ferromagnetic phase transition as well as a shift of the transition temperature towards lower temperatures with increasing ion fluence. Moreover, the ferromagnetic background at low temperatures generated by the ion irradiation leads to pronounced saturation magnetisation at 5 K. Complete erasure of the transition, i.e. ferromagnetic ordering through the whole temperature regime was achieved at a Ne{sup +} fluence of 3 × 10{sup 14} ions/cm{sup 2}. It does not coincide with the complete randomization of the chemical ordering of the crystal lattice.

  12. Swift heavy ion irradiation effects on carbonyl and trans-vinylene groups in high and low density polyethylene

    International Nuclear Information System (INIS)

    Grosso, M.F. del; Chappa, V.C.; Arbeitman, C.R.; Garcia Bermudez, G.; Behar, M.

    2009-01-01

    In this work, we have studied the effects of swift heavy ion irradiation on the creation of new functional groups in high and low density polyethylene (HDPE and LDPE). Polymers were irradiated with different ions (6.77 MeV He and 47 MeV Li) and fluences. The induced changes were analyzed by Fourier transform infrared (FTIR) spectroscopy. Creation and damage cross sections for some groups were compared for two different types of PE.

  13. Swift heavy ion irradiation effects on carbonyl and trans-vinylene groups in high and low density polyethylene

    Energy Technology Data Exchange (ETDEWEB)

    Grosso, M.F. del, E-mail: delgrosso@tandar.cnea.gov.a [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); Chappa, V.C. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); CONICET (Argentina); Arbeitman, C.R. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); Garcia Bermudez, G. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); CONICET (Argentina); Escuela de Ciencia y Tecnologia, UNSAM (Argentina); Behar, M. [Instituto de Fisica, UFRGS, Porto Alegre (Brazil)

    2009-10-01

    In this work, we have studied the effects of swift heavy ion irradiation on the creation of new functional groups in high and low density polyethylene (HDPE and LDPE). Polymers were irradiated with different ions (6.77 MeV He and 47 MeV Li) and fluences. The induced changes were analyzed by Fourier transform infrared (FTIR) spectroscopy. Creation and damage cross sections for some groups were compared for two different types of PE.

  14. Stability of uranium silicides during high energy ion irradiation

    International Nuclear Information System (INIS)

    Birtcher, R.C; Wang, L.M.

    1991-11-01

    Changes induced by 1.5 MeV Kr ion irradiation of both U 3 Si and U 3 Si 2 have been followed by in situ transmission electron microscopy. When irradiated at sufficiently low temperatures, both alloys transform from the crystalline to the amorphous state. When irradiated at temperatures above the temperature limit for ion beam amorphization, both compounds disorder with the Martensite twin structure in U 3 Si disappearing from view in TEM. Prolonged irradiation of the disordered crystalline phases results in nucleation of small crystallites within the initially large crystal grains. The new crystallites increase in number during continued irradiation until a fine grain structure is formed. Electron diffraction yields a powder-like diffraction pattern that indicates a random alignment of the small crystallites. During a second irradiation at lower temperatures, the small crystallizes retard amorphization. After 2 dpa at high temperatures, the amorphization dose is increased by over twenty times compared to that of initially unirradiated material

  15. In-situ high temperature irradiation setup for temperature dependent structural studies of materials under swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Kulriya, P.K.; Kumari, Renu; Kumar, Rajesh; Grover, V.; Shukla, R.; Tyagi, A.K.; Avasthi, D.K.

    2015-01-01

    An in-situ high temperature (1000 K) setup is designed and installed in the materials science beam line of superconducting linear accelerator at the Inter-University Accelerator Centre (IUAC) for temperature dependent ion irradiation studies on the materials exposed with swift heavy ion (SHI) irradiation. The Gd 2 Ti 2 O 7 pyrochlore is irradiated using 120 MeV Au ion at 1000 K using the high temperature irradiation facility and characterized by ex-situ X-ray diffraction (XRD). Another set of Gd 2 Ti 2 O 7 samples are irradiated with the same ion beam parameter at 300 K and simultaneously characterized using in-situ XRD available in same beam line. The XRD studies along with the Raman spectroscopic investigations reveal that the structural modification induced by the ion irradiation is strongly dependent on the temperature of the sample. The Gd 2 Ti 2 O 7 is readily amorphized at an ion fluence 6 × 10 12 ions/cm 2 on irradiation at 300 K, whereas it is transformed to a radiation-resistant anion-deficient fluorite structure on high temperature irradiation, that amorphized at ion fluence higher than 1 × 10 13 ions/cm 2 . The temperature dependent ion irradiation studies showed that the ion fluence required to cause amorphization at 1000 K irradiation is significantly higher than that required at room temperature irradiation. In addition to testing the efficiency of the in-situ high temperature irradiation facility, the present study establishes that the radiation stability of the pyrochlore is enhanced at higher temperatures

  16. The effect of carbon impurities on molybdenum surface morphology evolution under high-flux low-energy helium ion irradiation

    International Nuclear Information System (INIS)

    Tripathi, J.K.; Novakowski, T.J.; Gonderman, S.; Bharadwaj, N.; Hassanein, A.

    2016-01-01

    We report on the role of carbon (C) impurities, in molybdenum (Mo) fuzz evolutions on Mo surface during 100 eV He + ion irradiations. In this study we considered 0.01, 0.05, and 0.5% C + ion impurities in He + ion irradiations. For introducing such tiny C + ion impurities, gas mixtures of He and CH 4 have been chosen in following ratios; 99.95: 0.05, 99.75: 0.25, and 97.5: 2.5. Apart from these three cases, two additional cases, 100% He + ion (for Mo fuzz growth due to only He + ions) and 100% H + ion (for confirming the significance of tiny 0.04–2.0% H + ions in terms of Mo fuzz evolutions on Mo surface, if any), have also been considered. Ion energy (100 eV), ion fluence (2.6 × 10 24  ions m −2 ), and target temperature (923 K) were kept constant for each experiment and their selections were based on our previous studies [1,2]. Our study shows homogeneously populated and highly dense Mo fuzz evolutions on entire Mo surface for 100% He + ion irradiation case. Enhancement of C + ion impurities in He + ions causes a sequential reduction in Mo fuzz evolutions, leading to almost complete prevention of Mo fuzz evolutions for 0.5% C + ion impurity concentrations. Additionally, no fuzz formation for 100% H + ion irradiation at all, were seen (apart from some tiny nano-structuring, in very limited regions). This indicates that there is no significant role of H + ions in Mo fuzz evolutions (at least for such tiny amount, 0.04–2.0% H + ions). The study is significant to understand the behavior of potential high-Z plasma facing components (PFCs), in the, presence of tiny amount of C impurities, for nuclear fusion relevant applications. - Highlights: • Mo Fuzz evolutions due to low-energy high-flux 100% He + ion irradiation. • Sequential reduction in Mo fuzz evolutions with increasing C + ion impurities in He + ions. • Almost complete prevention of Mo fuzz evolutions for 0.5% C + ion impurity in He + ions. • No Mo fuzz formation for 100% H + ion

  17. Effect of 50 MeV Li3+ ion irradiation on electrical characteristics of high speed NPN power transistor

    International Nuclear Information System (INIS)

    Dinesh, C.M.; Ramani; Radhakrishna, M.C.; Dutt, R.N.; Khan, S.A.; Kanjilal, D.

    2008-01-01

    Silicon NPN overlay RF power high speed commercial bipolar junction transistors (BJTs) find applications in military, space and communication equipments. Here we report the effect of 50 MeV Li 3+ ion irradiation in the fluence range 1 x 10 11 -1.8 x 10 12 ions cm -2 on NPN power transistor. The range (R), electronic energy loss (S e ), nuclear energy loss (S n ), total ionizing dose (TID) and total displacement damage (D d ) in the silicon target are calculated from TRIM Monte Carlo Code. Output resistance is 3.568 x 10 4 Ω for unirradiated device and it increases to 6 x 10 7 Ω as the fluence is increased from 1 x 10 11 to 1.8 x 10 12 ions cm -2 . The capacitance of the emitter-base junction of the transistor decreases and dielectric loss of the emitter-base junction increases with increase in ion fluence. The built in voltage of the unirradiated sample is 0.5 V and it shifts to 0.4 V after irradiation at fluence of 1.8 x 10 12 ions cm -2 and the corresponding doping density reduced to 5.758 x 10 16 cm -3 . The charge carrier removal rate varies linearly with the increase in ion fluence

  18. Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Trupti, E-mail: tsphy91@gmail.com [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, Rahul; Vishnoi, Ritu [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

    2017-04-01

    Highlights: • Spin casted PCBM thin films (∼100 nm) are irradiated with 55 MeV Si{sup 4+} ion beam. • The decrease in band gap is observed after irradiation. • The surface properties is also dependent on incident ion fluences. • Polymerization reactions induced by energetic ions leads to modifications. - Abstract: The modifications produced by 55 MeV Si{sup 4+} swift heavy ion irradiation on the phenyl C{sub 61} butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 10{sup 10}, 1 × 10{sup 11} and 1 × 10{sup 12} ions/cm{sup 2} fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 10{sup 11} ions/cm{sup 2} fluence, the overlapping of ion tracks starts and produced overlapping effects.

  19. Multiple relaxation processes in high-energy ion irradiated kapton-H polyimide: Thermally stimulated depolarization current study

    International Nuclear Information System (INIS)

    Garg, Maneesha; Quamara, J.K.

    2006-01-01

    High-energy ion irradiation effects on the thermally stimulated depolarization current (Tdc) behaviour of kapton-H samples (12.5 μm) irradiated with 50 MeV Li ion (fluence 5 x 10 4 , 10 5 and 5 x 10 5 ions/cm 2 ) have been investigated. The TSDC spectra of the irradiated samples reveal that the β-peak (appearing around 80-110 deg. C) associated with dipolar relaxation has been significantly affected owing to the demerization of carbonyl groups due to irradiation. The TSDC spectra also reveal a new relaxation process (termed as γ-relaxation) around 30 deg. C, due to increased water absorptivity in irradiated samples. The peak around 200 deg. C (α-peak) associated with space charge relaxation process also shows a behavioural change with ion irradiation. The peak not only shifts towards the higher temperature with increasing fluence but also show an increase in its activation energy (0.33-0.99 eV) with increasing polarizing field. The creation of new deep energy trap centers due to the formation of conjugated bonds after irradiation is responsible for this modification. The Cole-Cole distribution curves show the formation of new sub-polar group with different characteristic relaxation time

  20. Experimental modeling of high burn-up structure in SIMFUEL with ion irradiation

    International Nuclear Information System (INIS)

    Baranov, V.; Isaenkova, M.; Lunev, A.; Tenishev, A.; Khlunov, A.

    2013-01-01

    Experiments are conducted to simulate high burn-up structure in accelerator conditions. Three ion irradiation schemes are used: 1. Xe 27+ 160 MeV up to 5x10 15 cm -2 (thermal spikes). 2. Xe 16+ 320 keV up to 1x10 17 cm -2 (collision cascades). 3. He + 20 keV up to 5,5x10 17 cm -2 (implantation stage). Structural characterization performed by scanning electron microscopy, X-ray analysis and atomic force microscopy revealed prominent grain refinement in case of Xe 27+ irradiation. Artificial energy variation for incident ions showed varying size of subgrains. At maximum energy of incident ions, subgrain size amounts ∼ 320 nm. Moving to the edge of irradiated region changes the size to ∼ 170 nm. Typical size of coherent scattering regions matches subgrain size for high-energy irradiation. Low-energy irradiation results in less significant structural changes: flaky structure at random sites for samples irradiated with low-energy xenon ions and bubble nucleation for helium irradiation. Dislocation density increases significantly, and it is shown that a single fluence dependence exists for low- and high-energy irradiation. (authors)

  1. Improving ion irradiated high Tc Josephson junctions by annealing: The role of vacancy-interstitial annihilation

    International Nuclear Information System (INIS)

    Sirena, M.; Matzen, S.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.; Crete, D. G.

    2007-01-01

    The authors have studied the annealing effect in the transport properties of high T c Josephson junctions (JJs) made by ion irradiation. Low temperature annealing (80 deg. C) increases the JJ coupling temperature (T J ) and the I c R n product, where I c is the critical current and R n the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one

  2. Temperature-dependent surface modification of Ta due to high-flux, low-energy He+ ion irradiation

    International Nuclear Information System (INIS)

    Novakowski, T.J.; Tripathi, J.K.; Hassanein, A.

    2015-01-01

    This work examines the response of Tantalum (Ta) as a potential candidate for plasma-facing components (PFCs) in future nuclear fusion reactors. Tantalum samples were exposed to high-flux, low-energy He + ion irradiation at different temperatures in the range of 823–1223 K. The samples were irradiated at normal incidence with 100 eV He + ions at constant flux of 1.2 × 10 21 ions m −2  s −1 to a total fluence of 4.3 × 10 24 ions m −2 . An additional Ta sample was also irradiated at 1023 K using a higher ion fluence of 1.7 × 10 25 ions m −2 (at the same flux of 1.2 × 10 21 ions m −2  s −1 ), to confirm the possibility of fuzz formation at higher fluence. This higher fluence was chosen to roughly correspond to the lower fluence threshold of fuzz formation in Tungsten (W). Surface morphology was characterized with a combination of field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). These results demonstrate that the main mode of surface damage is pinholes with an average size of ∼70 nm 2 for all temperatures. However, significantly larger pinholes are observed at elevated temperatures (1123 and 1223 K) resulting from the agglomeration of smaller pinholes. Ex situ X-ray photoelectron spectroscopy (XPS) provides information about the oxidation characteristics of irradiated surfaces, showing minimal exfoliation of the irradiated Ta surface. Additionally, optical reflectivity measurements are performed to further characterize radiation damage on Ta samples, showing gradual reductions in the optical reflectivity as a function of temperature.

  3. The effect of carbon impurities on molybdenum surface morphology evolution under high-flux low-energy helium ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Gonderman, S.; Bharadwaj, N.; Hassanein, A.

    2016-09-15

    We report on the role of carbon (C) impurities, in molybdenum (Mo) fuzz evolutions on Mo surface during 100 eV He{sup +} ion irradiations. In this study we considered 0.01, 0.05, and 0.5% C{sup +} ion impurities in He{sup +} ion irradiations. For introducing such tiny C{sup +} ion impurities, gas mixtures of He and CH{sub 4} have been chosen in following ratios; 99.95: 0.05, 99.75: 0.25, and 97.5: 2.5. Apart from these three cases, two additional cases, 100% He{sup +} ion (for Mo fuzz growth due to only He{sup +} ions) and 100% H{sup +} ion (for confirming the significance of tiny 0.04–2.0% H{sup +} ions in terms of Mo fuzz evolutions on Mo surface, if any), have also been considered. Ion energy (100 eV), ion fluence (2.6 × 10{sup 24} ions m{sup −2}), and target temperature (923 K) were kept constant for each experiment and their selections were based on our previous studies [1,2]. Our study shows homogeneously populated and highly dense Mo fuzz evolutions on entire Mo surface for 100% He{sup +} ion irradiation case. Enhancement of C{sup +} ion impurities in He{sup +} ions causes a sequential reduction in Mo fuzz evolutions, leading to almost complete prevention of Mo fuzz evolutions for 0.5% C{sup +} ion impurity concentrations. Additionally, no fuzz formation for 100% H{sup +} ion irradiation at all, were seen (apart from some tiny nano-structuring, in very limited regions). This indicates that there is no significant role of H{sup +} ions in Mo fuzz evolutions (at least for such tiny amount, 0.04–2.0% H{sup +} ions). The study is significant to understand the behavior of potential high-Z plasma facing components (PFCs), in the, presence of tiny amount of C impurities, for nuclear fusion relevant applications. - Highlights: • Mo Fuzz evolutions due to low-energy high-flux 100% He{sup +} ion irradiation. • Sequential reduction in Mo fuzz evolutions with increasing C{sup +} ion impurities in He{sup +} ions. • Almost complete prevention of Mo

  4. Changes in the surface electronic states of semiconductor fine particles induced by high energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yamaki, Tetsuya; Asai, Keisuke; Ishigure, Kenkichi [Tokyo Univ. (Japan); Shibata, Hiromi

    1997-03-01

    The changes in the surface electronic states of Q-sized semiconductor particles in Langmuir-Blodgett (LB) films, induced by high energy ion irradiation, were examined by observation of ion induced emission and photoluminescence (PL). Various emission bands attributed to different defect sites in the band gap were observed at the initial irradiation stage. As the dose increased, the emissions via the trapping sites decreased in intensity while the band-edge emission developed. This suggests that the ion irradiation would remove almost all the trapping sites in the band gap. The low energy emissions, which show a multiexponential decay, were due to a donor-acceptor recombination between the deeply trapped carriers. It was found that the processes of formation, reaction, and stabilization of the trapping sites would predominantly occur under the photooxidizing conditions. (author)

  5. Modification of WS2 nanosheets with controllable layers via oxygen ion irradiation

    Science.gov (United States)

    Song, Honglian; Yu, Xiaofei; Chen, Ming; Qiao, Mei; Wang, Tiejun; Zhang, Jing; Liu, Yong; Liu, Peng; Wang, Xuelin

    2018-05-01

    As one kind of two-dimensional materials, WS2 nanosheets have drawn much attention with different kinds of research methods. Yet ion irradiation method was barely used for WS2 nanosheets. In this paper, the structure, composition and optical band gap (Eg) of the multilayer WS2 films deposited by chemical vapor deposition (CVD) method on sapphire substrates before and after oxygen ion irradiation with different energy and fluences were studied. Precise tailored layer-structures and a controllable optical band gap of WS2 nanosheets were achieved after oxygen ion irradiation. The results shows higher energy oxygen irradiation changed the shape from triangular shaped grains to irregular rectangle shape but did not change 2H-WS2 phase structure. The intensity of E2g1 (Г) and A1g (Г) modes decreased and have small shifts after oxygen ion irradiation. The peak frequency difference between the E2g1 (Г) and A1g (Г) modes (Δω) decreased after oxygen ion irradiation, and this result indicates the number of layers decreased after oxygen ion irradiation. The Eg decreased with the increase of the energy and the fluence of oxygen ions. The number of layers, thickness and optical band gap changed after ion irradiation with different ion fluences and energies. The results proposed a new strategy for precise control of multilayer nanosheets and demonstrated the high applicability of ion irradiation in super-capacitors, field effect transistors and other applications.

  6. Investigation of structural materials of reactors using high-energy heavy-ion irradiations

    International Nuclear Information System (INIS)

    Wang Zhiguang

    2007-01-01

    Radiation damage in structural materials of fission/fusion reactors is mainly attributed to the evolution of intensive atom displacement damage induced by energetic particles (n, α and/or fission fragments) and high-rate helium doping by direct α particle bombardments and/or (n, α) reactions. It can cause severe degradation of reactor structural materials such as surface blistering, bulk void swelling, deformation, fatigue, embrittlement, stress erosion corrosion and so on that will significantly affect the operation safety of reactors. However, up to now, behavior of structural materials at the end of their service can hardly be fully tested in a real reactor. In the present work, damage process in reactor structural materials is briefly introduced, then the advantages of energetic ion implantation/irradiation especially high-energy heavy ion irradiation are discussed, and several typical examples on simulation of radiation effects in reactor candidate structural materials using high-energy heavy ion irradiations are pronounced. Experimental results and theoretical analysis suggested that irradiation with energetic particles especially high-energy heavy ions is very useful technique for simulating the evolution of microstructures and macro-properties of reactor structural materials. Furthermore, an on-going plan of material irradiation experiments using high energy H- and He-ions based on the Heavy Ion Research Facilities in Lanzhou (HIRFL) is also briefly interpreted. (authors)

  7. Temperature-dependent surface porosity of Nb{sub 2}O{sub 5} under high-flux, low-energy He{sup +} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Novakowski, T.J., E-mail: tnovakow@purdue.edu; Tripathi, J.K.; Hosinski, G.M.; Joseph, G.; Hassanein, A.

    2016-01-30

    Graphical abstract: - Highlights: • Nb{sub 2}O{sub 5} surfaces are nanostructured with a novel He{sup +} ion irradiation process. • High-flux, low energy He{sup +} ion irradiation generates highly porous surfaces. • Top-down approach guarantees good contact between different crystallites. • Sample annealing demonstrates temperature effect on surface morphology. • Surface pore diameter increases with increasing temperature. - Abstract: The present study reports on high-flux, low-energy He{sup +} ion irradiation as a novel method of enhancing the surface porosity and surface area of naturally oxidized niobium (Nb). Our study shows that ion-irradiation-induced Nb surface micro- and nano-structures are highly tunable by varying the target temperature during ion bombardment. Mirror-polished Nb samples were irradiated with 100 eV He{sup +} ions at a flux of 1.2 × 10{sup 21} ions m{sup −2} s{sup −1} to a total fluence of 4.3 × 10{sup 24} ions m{sup −2} with simultaneous sample annealing in the temperature range of 773–1223 K to demonstrate the influence of sample temperature on the resulting Nb surface morphology. This surface morphology was primarily characterized using field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Below 923 K, Nb surfaces form nano-scale tendrils and exhibit significant increases in surface porosity. Above 923 K, homogeneously populated nano-pores with an average diameter of ∼60 nm are observed in addition to a smaller population of sub-micron sized pores (up to ∼230 nm in diameter). Our analysis shows a significant reduction in surface pore number density and surface porosity with increasing sample temperature. High-resolution ex situ X-ray photoelectron spectroscopy (XPS) shows Nb{sub 2}O{sub 5} phase in all of the ion-irradiated samples. To further demonstrate the length scales in which radiation-induced surface roughening occurs, optical reflectivity was performed over a spectrum of

  8. Deuterium trapping in carbon fiber composites under high fluence

    International Nuclear Information System (INIS)

    Airapetov, A.A.; Begrambekov, L.B.; Kuzmin, A.A.; Shigin, P.A.; Zakharov, A.M.

    2010-01-01

    The paper is devoted to investigation of deuterium trapping in CFC, dance graphite MPG-8 and pyrolytic graphite (PG) under plasma ion- and electron irradiation. Number of specific features of deuterium trapping and retention under plasma ion and electron irradiation is presented and discussed. In particular it is shown that 1) deuterium trapping takes place even when energy of impinging ions approaches zero; 2) deuterium is trapped under irradiation by plasma electrons; 3) under irradiation at equal fluences deuterium trapping is higher, when ion flux is smaller. High energy ion penetrating the surfaces are trapped in the traps created at the expense of their kinetic energy. The process may be named 'kinetic trapping'. Under low energy (smaller than 200 eV) electron and/or ion irradiation the energy of inelastic interaction on the surface provides creation of active centers, which initiate dissociation of deuterium sorbed on the surface, penetration of deuterium atoms into graphite and their trapping in specific low energy traps. The term 'potential trapping' is proposed for this type of trapping. Under high energy irradiation such atoms can fill the traps formed through kinetic mechanism. Origination of moveable deuterium atoms from the layer of surface sorption seems to be time dependent process and it is a reason of increase of trapping along with irradiation time. New features of deuterium trapping and retention in graphite evaluated in this study offer new opportunities for analysis and correct estimation of hydrogen isotope trapping and retention in tokamaks having graphite tiles. (authors)

  9. Deuterium accumulation in tungsten at high fluences

    Energy Technology Data Exchange (ETDEWEB)

    Zibrov, Mikhail [Max-Planck-Institut fuer Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching (Germany); FOM Institute DIFFER, De Zaale 20, 5612 AJ Eindhoven (Netherlands); Balden, Martin; Matej, Matej [Max-Planck-Institut fuer Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching (Germany); Bystrov, Kirill; Morgan, Thomas [FOM Institute DIFFER, De Zaale 20, 5612 AJ Eindhoven (Netherlands)

    2016-07-01

    The data on the deuterium (D) retention in tungsten (W) at high fluences (≥ 10{sup 27} D/m{sup 2}) are scarce and the existing results are contradictory. Since retention in W is known to be flux-dependent, the laboratory experiments addressing this issue should be carried out in reactor-relevant conditions (high fluxes of low-energy ions). In this work the samples made of polycrystalline W were exposed to D plasmas in the linear plasma generator Pilot-PSI at temperatures ranging from 360 K to 1140 K to fluences in the range of 0.3-8.7 x 10{sup 27} D/m{sup 2}. It was observed that at exposure temperatures of 360 K and 580 K the D retention was only slightly dependent on the ion fluence. In addition, the presence of blister-like structures was found after the exposures, and their density and size distributions were also only weakly dependent on the fluence. In the case of exposure at 1140 K no surface modifications of the samples after plasma exposure were detected and the concentrations of retained D were very small. At all temperatures used the total amounts of retained D were smaller compared to those obtained by other researchers at lower ion flux densities, which indicates that the incident ion flux may play an important role in the total D retention in W.

  10. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    Energy Technology Data Exchange (ETDEWEB)

    Dang, Z. Y.; Breese, M. B. H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore Singapore 117542 (Singapore); Lin, Y.; Tok, E. S. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Vittone, E. [Physics Department, NIS Excellence Centre and CNISM, University of Torino, via Pietro Giuria 1, 10125 Torino (Italy)

    2014-05-12

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  11. Low energy ion implantation and high energy heavy ion irradiation in C60 films

    International Nuclear Information System (INIS)

    Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

    2001-01-01

    C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

  12. Annealing of ion irradiated high TC Josephson junctions studied by numerical simulations

    International Nuclear Information System (INIS)

    Sirena, M.; Matzen, S.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.; Crete, D. G.

    2009-01-01

    Recently, annealing of ion irradiated high T c Josephson iunctions (JJs) has been studied experimentally in the perspective of improving their reproducibility. Here we present numerical simulations based on random walk and Monte Carlo calculations of the evolution of JJ characteristics such as the transition temperature T c ' and its spread ΔT c ' , and compare them with experimental results on junctions irradiated with 100 and 150 keV oxygen ions, and annealed at low temperatures (below 80 deg. C). We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the T c ' and the homogeneity of a JJ array, analyzing the evolution of the defects density mean value and its distribution width. The annealing first increases the spread in T c ' for short annealing times due to the stochastic nature of the process, but then tends to reduce it for longer times, which is interesting for technological applications

  13. Electronic excitation induced modifications in elongated iron nanoparticle encapsulated multiwalled carbon nanotubes under ion irradiation

    Science.gov (United States)

    Saikiran, V.; Bazylewski, P.; Sameera, I.; Bhatia, Ravi; Pathak, A. P.; Prasad, V.; Chang, G. S.

    2018-05-01

    Multi-wall carbon nanotubes (MWCNT) filled with Fe nanorods were shown to have contracted and deformed under heavy ion irradiation. In this study, 120 MeV Ag and 80 MeV Ni ion irradiation was performed to study the deformation and defects induced in iron filled MWCNT under heavy ion irradiation. The structural modifications induced due to electronic excitation by ion irradiation were investigated employing high-resolution transmission electron microscopy, micro-Raman scattering experiments, and synchrotron-based X-ray absorption and emission spectroscopy. We understand that the ion irradiation causes modifications in the Fe nanorods which result in compressions and expansions of the nanotubes, and in turn leads to the buckling of MWCNT. The G band of the Raman spectra shifts slightly towards higher wavenumber and the shoulder G‧ band enhances with the increase of ion irradiation fluence, where the buckling wavelength depends on the radius 'r' of the nanotubes as exp[(r)0.5]. The intensity ratio of the D to G Raman modes initially decreases at the lowest fluence, and then it increases with the increase in ion fluence. The electron diffraction pattern and the high resolution images clearly show the presence of ion induced defects on the walls of the tube and encapsulated iron nanorods.

  14. Degradation mechanisms of optoelectric properties of GaN via highly-charged 209Bi33+ ions irradiation

    Science.gov (United States)

    Zhang, L. Q.; Zhang, C. H.; Xian, Y. Q.; Liu, J.; Ding, Z. N.; Yan, T. X.; Chen, Y. G.; Su, C. H.; Li, J. Y.; Liu, H. P.

    2018-05-01

    N-type gallium nitride (GaN) epitaxial layers were subjected to 990-keV Bi33+ ions irradiation to various fluences. Optoelectric properties of the irradiated-GaN specimens were studied by means of Raman scattering and variable temperature photoluminescence (PL) spectroscopy. Raman spectra reveal that both the free-carrier concentration and its mobility generally decrease with a successive increase in ion fluence. Electro-optic mechanisms dominated the electrical transport to a fluence of 1.061 × 1012 Bi33+/cm2. Above this fluence, electrical properties were governed by the deformation potential. The appearance of vacancy-type defects results in an abrupt degradation in electrical transports. Varying temperature photoluminescence (PL) spectra display that all emission lines of 1.061 × 1012 Bi33+/cm2-irradiated specimen present a general remarkable thermal redshift, quenching, and broadening, including donor-bound-exciton peak, yellow luminescence band, and LO-phonon replicas. Moreover, as the temperature rises, a transformation from excitons (donor-acceptor pairs' luminescence) to band-to-band transitions (donor-acceptor combinations) was found, and the shrinkage effect of the band gap dominated the shift of the peak position gradually, especially the temperature increases above 150 K. In contrast to the un-irradiated specimen, a sensitive temperature dependence of all photoluminescence (PL) lines' intensity obtained from 1.061 × 1012 Bi33+/cm2-irradiated specimen was found. Mechanisms underlying were discussed.

  15. Tailoring of refractive index profiles in LiNbO3 optical waveguides by low-fluence swift-ion irradiation

    International Nuclear Information System (INIS)

    Ruiz, T; Mendez, A; Carrascosa, M; Carnicero, J; GarcIa-Cabanes, A; Olivares, J; Agullo-Lopez, F; GarcIa-Navarro, A; GarcIa, G

    2007-01-01

    Proton-exchange LiNbO 3 planar optical waveguides have been irradiated with swift ions (Cl 30 MeV) at very low fluences in the range 5 x 10 10 -5 x 10 12 cm -2 . Large modifications in the refractive index profiles, and therefore in the optical performance, have been obtained due to the generation of amorphous nano-tracks by the individual ion impacts. Moreover, a fine tuning of the refractive index can be achieved by a suitable control of the fluence (δn/δφ ∼ 10 -14 cm 2 or δn ∼ 10 -5 for δφ = 10 9 cm -2 ). An effective medium approach has been used to account for those changes and determine the amorphous fraction of material. The results have been compared with information extracted from complementary RBS channelling experiments. From the calculated amorphous fractions a radius of ∼2 nm for the amorphous tracks have been estimated

  16. High-energy xenon ion irradiation effects on the electrical properties of yttrium iron garnet

    International Nuclear Information System (INIS)

    Costantini, J.M.; Flament, J.L.; Sinopoli, L.; Trochon, J.; Uzureau, J.L.; Groult, D.; Studer, F.; Toulemonde, M.

    1989-01-01

    Thin monocristalline samples of yttrium iron garnet Y 3 Fe 5 O 12 (YIG) were irradiated at room temperature with 27 MeV/A 132 Xe ions at varying fluences up to 3.5 x 10 12 ions cm -2 . Sample thickness (100 μm) was smaller than the mean projected range of ions (170 μm) so that we were able to study the effects of irradiation damage solely. At such a high ion energy the nuclear energy loss is negligible and damage is mainly due to electronic excitation energy loss. YIG d.c conductivity is found to rise by a factor 40 for the highest dose while the permittivity increases only slightly after irradiation (40% max.). The dielectric losses are also enhanced as the ion fluence increases especially at lower frequencies (by a factor 6 at 10 KHz). No dielectric relaxation peak is observed in the frequency range explored here (10 KHz - 10 MHz)

  17. Comparison between bulk and thin foil ion irradiation of ultra high purity Fe

    Energy Technology Data Exchange (ETDEWEB)

    Prokhodtseva, A., E-mail: anna.prokhodtseva@psi.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherches en Physique des Plasmas, Association Euratom-Confédération Suisse, 5232 Villigen PSI (Switzerland); Décamps, B. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), CNRS-IN2P3-Univ. Paris-Sud 11, UMR 8609, Bât. 108, 91405 Orsay (France); Schäublin, R. [Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherches en Physique des Plasmas, Association Euratom-Confédération Suisse, 5232 Villigen PSI (Switzerland)

    2013-11-15

    Accumulation of radiation damage in ultra high purity iron under self ion irradiation without and with simultaneous He implantation was investigated in bulk and thin foil form to assess, on the one hand, the effect of free surfaces and, on the other hand, the influence of He. Specimens were irradiated at room temperature to a dose of 0.8 dpa and ∼900 appm He content. We found in thin foils after irradiation with single beam a majority of a{sub 0} 〈1 0 0〉 type loops, while in the presence of He it is the ½ a{sub 0} 〈1 1 1〉 type loops that prevail. In single beam irradiated bulk samples most of the loops are of ½ a{sub 0} 〈1 1 1〉 type. In both bulk and thin foils density of defects visible in transmission electron microscope is considerably higher when He is implanted with prevailing ½ a{sub 0} 〈1 1 1〉 dislocation loops, indicating that He stabilizes them.

  18. Methodology for determining void swelling at very high damage under ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Getto, E., E-mail: embecket@umich.edu [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Sun, K. [Department of Materials Science Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Taller, S.; Monterrosa, A.M.; Jiao, Z. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Was, G.S. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Department of Materials Science Engineering, University of Michigan, Ann Arbor, MI 48109 (United States)

    2016-08-15

    At very high damage levels in ion irradiated samples, the decrease in effective density of the irradiated material due to void swelling can lead to errors in quantifying swelling. HT9 was pre-implanted with 10 appm He and subjected to a raster-scanned beam with a damage rate of ∼1 × 10{sup −3} dpa/s at 460{sup o}C. Voids were characterized from 0 to 1300 nm. Fixed damage rate and fixed depth methods were developed to account for damage-dependent porosity increase and resulting dependence on depth. The fixed depth method was more appropriate as it limits undue effects from the injected interstitial while maintaining a usable void distribution. By keeping the depth fixed and accounting for the change in damage rate due to reduced density, the steady state swelling rate was 10% higher than calculation of swelling from raw data. This method is easily translatable to other materials, ion types and energies and limits the impact of the injected interstitial.

  19. Photoluminescence and reflectivity studies of high energy light ions irradiated polymethyl methacrylate films

    Science.gov (United States)

    Bharti, Madhu Lata; Singh, Fouran; Ramola, R. C.; Joshi, Veena

    2017-11-01

    The self-standing films of non-conducting polymethyl methacrylate (PMMA) were irradiated in vacuum using high energy light ions (HELIs) of 50 MeV Lithium (Li+3) and 80 MeV Carbon (C+5) at various ion dose to induce the optical changes in the films. Upon HELI irradiation, films exhibit a significant enhancement in optical reflectivity at the highest dose. Interestingly, the photoluminescence (PL) emission band with green light at (514.5 nm) shows a noticeable increase in the intensity with increasing ion dose for both ions. However, the rate of increase in PL intensity is different for both HELI and can be correlated with the linear energy transfer by these ions in the films. Origin of PL is attributed to the formation of carbon cluster and hydrogenated amorphous carbon in the polymer films. HAC clusters act as PL active centres with optical reflectivity. Most of the harmful radiation like UV are absorbed by the material and is becoming opaque after irradiation and this PL active material are useful in fabrication of optoelectronic devices, UV-filter, back-lit components in liquid crystal display systems, micro-components for integrate optical circuits, diffractive elements, advanced materials and are also applicable to the post irradiation laser treatment by means of ion irradiation.

  20. High dose radiation damage in nuclear energy structural materials investigated by heavy ion irradiation simulation

    International Nuclear Information System (INIS)

    Zheng Yongnan; Xu Yongjun; Yuan Daqing

    2014-01-01

    Structural materials in ITER, ADS and fast reactor suffer high dose irradiations of neutrons and/or protons, that leads to severe displacement damage up to lOO dpa per year. Investigation of radiation damage induced by such a high dose irradiation has attracted great attention along with the development of nuclear energy facilities of new generation. However, it is deeply hampered for the lacking of high dose neutron and proton sources. Irradiation simulation of heavy ions produced by accelerators opens up an effective way for laboratory investigation of high dose irradiation induced radiation damage encountered in the ITER, ADS, etc. Radiation damage is caused mainly by atomic displacement in materials. The displacement rate of heavy ions is about lO 3 ∼10 7 orders higher than those of neutrons and protons. High displacement rate of heavy ions significantly reduces the irradiation time. The heavy ion irradiation simulation technique (HIIS) technique has been developed at China Institute of Atomic Energy and a series of the HIIS experiments have been performed to investigate radiation damage in stainless steels, tungsten and tantalum at irradiation temperatures from room temperature to 800 ℃ and in the irradiation dose region up to 100 dpa. The experimental results show that he radiation swelling peak for the modified stainless steel appears in the temperature region around 580 ℃ and the radiation damage is more sensitive to the temperature, the size of the radiation induced vacancy cluster or void increase with the increasing of the irradiation dose, and among the three materials the home-made modified stainless steel has the best radiation resistant property. (authors)

  1. High energy (MeV) ion-irradiated π-conjugated polyaniline: Transition from insulating state to carbonized conducting state

    International Nuclear Information System (INIS)

    Park, S.K.; Lee, S.Y.; Lee, C.S.; Kim, H.M.; Joo, J.; Beag, Y.W.; Koh, S.K.

    2004-01-01

    High energy (MeV) C 2+ , F 2+ , and Cl 2+ ions were irradiated onto π-conjugated polyaniline emeraldine base (PAN-EB) samples. The energy of an ion beam was controlled to a range of 3-4.5 MeV, with the ion dosage varying from 1x10 12 to 1x10 16 ions/cm 2 . The highest dc conductivity (σ dc ) at room temperature was measured to be ∼60 S/cm for 4.5 MeV Cl 2+ ion-irradiated PAN-EB samples with a dose of 1x10 16 ions/cm 2 . We observed the transition of high energy ion-irradiated PAN-EB samples from insulating state to conducting state as a function of ion dosage based on σ dc and its temperature dependence. The characteristic peaks of the Raman spectrum of the PAN-EB samples were reduced, while the D-peak (disordered peak) and the G peak (graphitic peak) appeared as the ion dose increased. From the analysis of the D and G peaks of the Raman spectra of the systems compared to multiwalled carbon nanotubes, ion-irradiated graphites, and annealed carbon films, the number of the clusters of hexagon rings with conducting sp 2 -bonded carbons increased with ion dosage. We also observed the increase in the size of the nanocrystalline graphitic domain of the systems with increasing ion dosage. The intensity of normalized electron paramagnelic resonance signal also increased in correlation with ion dose. The results of this study demonstrate that π-conjugated pristine PAN-EB systems changed from insulating state to carbonized conducting state through high energy ion irradiation with high ion dosage

  2. High energy ion irradiation effects on polymer materials. LET dependence of G value of scission of polymethylmethacrylate (PMMA)

    Energy Technology Data Exchange (ETDEWEB)

    Kudoh, H; Sasuga, T; Seguchi, T [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    Linear energy transfer (LET) dependence on the probability of main chain scission of polymethylmethacrylate (PMMA) was investigated. The probability was obtained from decreases in molecular weight measured by the gel permeation chromatography (GPC), and LET was evaluated by TRIM code. The scission probability as a function of LET was almost constant in the low LET, and decreased in the high LET ion irradiation. The mechanism was interpreted from the model of spur-overlapping along an ion`s path. (author)

  3. Study of the degradation process of polyimide induced by high energetic ion irradiation

    International Nuclear Information System (INIS)

    Severin, Daniel

    2008-01-01

    The dissertation focuses on the radiation hardness of Kapton under extreme radiation environment conditions. To study ion-beam induced modifications, Kapton foils were irradiated at the GSI linear accelerator UNILAC using several projectiles (e.g. Ti, Mo, Au, and U) within a large fluence regime (1 x 10 10 -5 x 10 12 ions/cm 2 ). The irradiated Kapton foils were analysed by means of infrared and UV/Vis spectroscopy, tensile strength measurement, mass loss analysis, and dielectric relaxation spectroscopy. For testing the radiation stability of Kapton at the cryogenic operation temperature (5-10 K) of the superconducting magnets, additional irradiation experiments were performed at the Grand Accelerateur National d' Ions Lourds (GANIL, France) focusing on the online analysis of the outgassing process of small volatile degradation fragments. The investigations of the electrical properties analysed by dielectric relaxation spectroscopy exhibit a different trend: high fluence irradiations with light ions (e.g. Ti) lead to a slight increase of the conductivity, whereas heavy ions (e.g. Sm, Au) cause a drastic change already in the fluence regime of nonoverlapping tracks (5 x 10 10 ions/cm 2 ). Online analysis of the outgassing process during irradiation at cryogenic temperatures shows the release of a variety of small gaseous molecules (e.g. CO, CO 2 , and short hydro carbons). Also a small amount of large polymer fragments is identified. The results allow the following conclusions which are of special interest for the application of Kapton as insulating material in a high-energetic particle radiation environment. a) The material degradation measured with the optical spectroscopy and tensile strength tests are scalable with the dose deposited by the ions. The high correlation of the results allows the prediction of the mechanical degradation with the simple and non-destructive infrared spectroscopy. The degradation curve points to a critical material degradation which

  4. Study of the degradation process of polyimide induced by high energetic ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Severin, Daniel

    2008-09-19

    The dissertation focuses on the radiation hardness of Kapton under extreme radiation environment conditions. To study ion-beam induced modifications, Kapton foils were irradiated at the GSI linear accelerator UNILAC using several projectiles (e.g. Ti, Mo, Au, and U) within a large fluence regime (1 x 10{sup 10}-5 x 10{sup 12} ions/cm{sup 2}). The irradiated Kapton foils were analysed by means of infrared and UV/Vis spectroscopy, tensile strength measurement, mass loss analysis, and dielectric relaxation spectroscopy. For testing the radiation stability of Kapton at the cryogenic operation temperature (5-10 K) of the superconducting magnets, additional irradiation experiments were performed at the Grand Accelerateur National d' Ions Lourds (GANIL, France) focusing on the online analysis of the outgassing process of small volatile degradation fragments. The investigations of the electrical properties analysed by dielectric relaxation spectroscopy exhibit a different trend: high fluence irradiations with light ions (e.g. Ti) lead to a slight increase of the conductivity, whereas heavy ions (e.g. Sm, Au) cause a drastic change already in the fluence regime of nonoverlapping tracks (5 x 10{sup 10} ions/cm{sup 2}). Online analysis of the outgassing process during irradiation at cryogenic temperatures shows the release of a variety of small gaseous molecules (e.g. CO, CO{sub 2}, and short hydro carbons). Also a small amount of large polymer fragments is identified. The results allow the following conclusions which are of special interest for the application of Kapton as insulating material in a high-energetic particle radiation environment. a) The material degradation measured with the optical spectroscopy and tensile strength tests are scalable with the dose deposited by the ions. The high correlation of the results allows the prediction of the mechanical degradation with the simple and non-destructive infrared spectroscopy. The degradation curve points to a

  5. Observation of transient lattice vacancies produced during high-energy ion irradiation of Ni foils

    International Nuclear Information System (INIS)

    Tsuchida, Hidetsugu; Iwai, Takeo; Awano, Misa; Kishida, Mutsumi; Katayama, Ichiro; Jeong, Sun-Chang; Ogawa, Hidemi; Sakamoto, Naoki; Komatsu, Masao; Itoh, Akio

    2007-01-01

    Real-time positron annihilation spectroscopy has been applied for the first time for the investigation of lattice vacancies produced during ion irradiation. Measurements were performed for thin nickel foils irradiated with 2.5 MeV C ions. Doppler broadenings of positron annihilation γ-rays were measured alternately during beam-on and beam-off conditions. It was found that the Doppler broadening line-shape parameter measured during irradiation is larger than those obtained before and after irradiation. This evidently implies that transient or non-survivable vacancy defects are produced during ion irradiation. On the other hand, no such significant change in the line-shape parameter was observed for other face-centred-cubic metal forms of aluminium

  6. Aging and Embrittlement of High Fluence Stainless Steels

    Energy Technology Data Exchange (ETDEWEB)

    Was, gary; Jiao, Zhijie; der ven, Anton Van; Bruemmer, Stephen; Edwards, Dan

    2012-12-31

    Irradiation of austenitic stainless steels results in the formation of dislocation loops, stacking fault tetrahedral, Ni-Si clusters and radiation-induced segregation (RIS). Of these features, it is the formation of precipitates which is most likely to impact the mechanical integrity at high dose. Unlike dislocation loops and RIS, precipitates exhibit an incubation period that can extend from 10 to 46 dpa, above which the cluster composition changes and a separate phase, (G-phase) forms. Both neutron and heavy ion irradiation showed that these clusters develop slowly and continue to evolve beyond 100 dpa. Overall, this work shows that the irradiated microstructure features produced by heavy ion irradiation are remarkably comparable in nature to those produced by neutron irradiation at much lower dose rates. The use of a temperature shift to account for the higher damage rate in heavy ion irradiation results in a fairly good match in the dislocation loop microstructure and the precipitate microstructure in austenitic stainless steels. Both irradiations also show segregation of the same elements and in the same directions, but to achieve comparable magnitudes, heavy ion irradiation must be conducted at a much higher temperature than that which produces a match with loops and precipitates. First-principles modeling has confirmed that the formation of Ni-Si precipitates under irradiation is likely caused by supersaturation of solute to defect sinks caused by highly correlated diffusion of Ni and Si. Thus, the formation and evolution of Ni-Si precipitates at high dose in austenitic stainless steels containing Si is inevitable.

  7. Improvement of the High Fluence Irradiation Facility at the University of Tokyo

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Kenta, E-mail: murakami@tokai.t.u-tokyo.ac.jp [Nuclear Professional School, School of Engineering, The University of Tokyo, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki 319-1188 (Japan); Iwai, Takeo, E-mail: iwai@med.id.yamagata-u.ac.jp [Faculty of Medicine, Yamagata University, 2-2-2 Iida-Nishi, Yamagata, Yamagata-shi 990-9585 (Japan); Abe, Hiroaki, E-mail: abe.hiroaki@n.t.u-tokyo.ac.jp [Nuclear Professional School, School of Engineering, The University of Tokyo, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki 319-1188 (Japan); Sekimura, Naoto, E-mail: sekimura@n.t.u-tokyo.ac.jp [Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 7-3-1, Tokyo, Hongo, Bunkyo, 113-8656 (Japan)

    2016-08-15

    This paper reports the modification of the High Fluence Irradiation Facility at the University of Tokyo (HIT). The HIT facility was severely damaged during the 2011 earthquake, which occurred off the Pacific coast of Tohoku. A damaged 1.0 MV tandem Cockcroft-Walton accelerator was replaced with a 1.7 MV accelerator, which was formerly used in another campus of the university. A decision was made to maintain dual-beam irradiation capability by repairing the 3.75 MV single-ended Van de Graaff accelerator and reconstructing the related beamlines. A new beamline was connected with a 200 kV transmission electron microscope (TEM) to perform in-situ TEM observation under ion irradiation.

  8. Surface structure modification of single crystal graphite after slow, highly charged ion irradiation

    Science.gov (United States)

    Alzaher, I.; Akcöltekin, S.; Ban-d'Etat, B.; Manil, B.; Dey, K. R.; Been, T.; Boduch, P.; Rothard, H.; Schleberger, M.; Lebius, H.

    2018-04-01

    Single crystal graphite was irradiated by slow, highly charged ions. The modification of the surface structure was studied by means of Low-Energy Electron Diffraction. The observed damage cross section increases with the potential energy, i.e. the charge state of the incident ion, at a constant kinetic energy. The potential energy is more efficient for the damage production than the kinetic energy by more than a factor of twenty. Comparison with earlier results hints to a strong link between early electron creation and later target atom rearrangement. With increasing ion fluence, the initially large-scale single crystal is first transformed into μ m-sized crystals, before complete amorphisation takes place.

  9. High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

    International Nuclear Information System (INIS)

    Sall, Mamour

    2013-01-01

    Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

  10. Colloidal assemblies modified by ion irradiation

    NARCIS (Netherlands)

    Snoeks, E.; Blaaderen, A. van; Dillen, T. van; Kats, C.M. van; Velikov, K.P.; Brongersma, M.L.; Polman, A.

    2001-01-01

    Spherical SiO2 and ZnS colloidal particles show a dramatic anisotropic plastic deformation under 4 MeV Xe ion irradiation, that changes their shape into oblate into oblate ellipsional, with an aspect ratio that can be precisely controlled by the ion fluence. The 290 nm and 1.1 um diameter colloids

  11. Ion irradiation effects on high purity bcc Fe and model FeCr alloys

    International Nuclear Information System (INIS)

    Bhattacharya, Arunodaya

    2014-01-01

    FeCr binary alloys are a simple representative of the reduced activation ferritic/martensitic (F-M) steels, which are currently the most promising candidates as structural materials for the sodium cooled fast reactors (SFR) and future fusion systems. However, the impact of Cr on the evolution of the irradiated microstructure in these materials is not well understood in these materials. Moreover, particularly for fusion applications, the radiation damage scenario is expected to be complicated further by the presence of large quantities of He produced by the nuclear transmutation (∼ 10 appm He/dpa). Within this context, an elaborate ion irradiation study was performed at 500 C on a wide variety of high purity FeCr alloys (with Cr content ranging from ∼ 3 wt.% to 14 wt.%) and a bcc Fe, to probe in detail the influence of Cr and He on the evolution of microstructure. The irradiations were performed using Fe self-ions, in single beam mode and in dual beam mode (damage by Fe ions and co-implantation of He), to separate ballistic damage effect from the impact of simultaneous He injection. Three different dose ranges were studied: high dose (157 dpa, 17 appm He/dpa for the dual beam case), intermediate dose (45 dpa, 57 appm He/dpa for dual beam case) and in-situ low dose (0.33 dpa, 3030 appm He/dpa for the dual beam case). The experiments were performed at the JANNuS triple beam facility and dual beam in situ irradiation facility at CEA-Saclay and CSNSM, Orsay respectively. The microstructure was principally characterized by conventional TEM, APT and EDS in STEM mode. The main results are as follows: 1) A comparison of the cavity microstructure in high dose irradiated Fe revealed strong swelling reduction by the addition of He. It was achieved by a drastic reduction in cavity sizes and an increased number density. This behaviour was observed all along the damage depth, up to the damage peak. 2) Cavity microstructure was also studied in the dual beam high dose

  12. Improving the IcRn product and the reproducibility of high Tc Josephson junctions made by ion irradiation

    International Nuclear Information System (INIS)

    Sirena, M.; Fabreges, X.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.

    2007-01-01

    A simple model has been proposed to explain the spread in the characteristics of high T c Josephson junctions made by ion irradiation, assuming that the source of dispersion is the slit's size variation. Accordingly, increasing ion energy should lead to a significant reduction of inhomogeneities. Test samples have been fabricated using two different beam energies. As predicted, the spread in critical current decreases upon increasing energy. Moreover, since the actual width of the barrier is reduced in this case, the I c R n product increases significantly. These results seem promising for future technological applications

  13. Nickel and cobalt filled multiwalled carbon nantubes : structural transformation under heavy ion irradiation and high pressure

    International Nuclear Information System (INIS)

    Misra, D.S.; Misra, A.; Tyagi, Pawan K.; Karamakar, S.; Sharma, Surinder M.

    2006-01-01

    Full text: The nickel and cobalt nano wires of diameters ranging from 5-15 nm are formed inside the multiwalled carbon nantubes using microwave plasma chemical vapor deposition in our laboratory. The nano wires inside the tubes are found to have a perfect crystalline structure and the crystalline planes of (111) orientations are aligned for FCC nickel and cobalt in a particular fashion. We find that the cobalt can exist either in FCC or HCP phase in confinement depending upon the diameter of the tubes. The irradiation of these nanowires with high energy Au + ions alter the orientation of the crystalline planes and generate various types of domains and defects in the nanowires. The complete amorphization of the walls of the nano tubes is observed at the fluence of 5x10 13 /cm 2 and results in amorphization of nickel nano wires as well. The cobalt nano wires have FCC structure in ambient conditions and transform to HCP cobalt irreversibly when subjected to high pressure of ∼9 GPa. Multi-walled carbon nano tubes that encapsulate the cobalt nano wires do not undergo any other structural transformation with pressure except partial reversible amorphization beyond 9 GPa

  14. Depth profiling by Raman spectroscopy of high-energy ion irradiated silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xu; Zhang, Yanwen; Liu, Shiyi; Zhao, Ziqiang, E-mail: zqzhao@pku.edu.cn

    2014-01-15

    Single crystals of 6H–SiC were irradiated at room temperature with 20 MeV carbon ions at fluences of 1.5 × 10{sup 15} and 6.0 × 10{sup 15} cm{sup −2}. Raman measurements were performed to study irradiation induced damage and the in-depth damage profile of SiC. A clear change of damage from the surface down to the stopping region of carbon ions as simulated by SRIM is exhibited. The affected area as detected by Raman is in good agreement with SRIM predictions while a little shallower dpa profile is observed. The partial disorder defined in the present work as a function of depth is demonstrated. A shift of the position of the TO peak towards lower wavenumbers with in-depth damage and then to higher wavenumbers beyond the most damaged region indicates that tensile strain due to defects has a backward V-curve distribution. The damaged layer is subjected to a compressive in-plane stress associated with the out-of-plane strain and the magnitude of this stress also has a backward V-curve depth profile. The evolution of line width of the TO peak with depth clearly shows the density of defects reaches the higher level at the most damaged region. The Raman spectroscopy scanning technique is proved to be a powerful tool for profiling of crystal damage induced by high-energy ion implantation.

  15. Colloidal assemblies modified by ion irradiation

    OpenAIRE

    Snoeks, E.; Blaaderen, A. van; Dillen, T. van; Kats, C.M. van; Velikov, K.P.; Brongersma, M.L.; Polman, A.

    2001-01-01

    Spherical SiO2 and ZnS colloidal particles show a dramatic anisotropic plastic deformation under 4 MeV Xe ion irradiation, that changes their shape into oblate into oblate ellipsional, with an aspect ratio that can be precisely controlled by the ion fluence. The 290 nm and 1.1 um diameter colloids were deposited on a Si substrate and irradiated at 90 K, using fluences in the range 3*10^(13)-8*10^(14) cm^(-2). The transverse particle diameter shows a linear increase with ion fluence, while the...

  16. Recoil mixing in high-fluence ion implantation

    International Nuclear Information System (INIS)

    Littmark, U.; Hofer, W.O.

    1979-01-01

    The effect of recoil mixing on the collection and depth distribution of implanted projectiles during high-fluence irradiation of a random solid is investigated by model calculations based on a previously published transport theoretical approach to the general problem of recoil mixing. The most pronounced effects are observed in the maximum implantable amount of projectiles and in the critical fluence for saturation. Both values are significantly increased by recoil mixing. (Auth.)

  17. The co-evolution of microstructure features in self-ion irradiated HT9 at very high damage levels

    Energy Technology Data Exchange (ETDEWEB)

    Getto, E., E-mail: getto@usna.edu [Department of Mechanical Engineering, United States Naval Academy, Annapolis, MD, 21402 (United States); Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI, 48109 (United States); Vancoevering, G.; Was, G.S. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI, 48109 (United States)

    2017-02-15

    Understanding the void swelling and phase evolution of reactor structural materials at very high damage levels is essential to maintaining safety and longevity of components in Gen IV fast reactors. A combination of ion irradiation and modeling was utilized to understand the microstructure evolution of ferritic-martensitic alloy HT9 at high dpa. Self-ion irradiation experiments were performed on alloy HT9 to determine the co-evolution of voids, dislocations and precipitates up to 650 dpa at 460 °C. Modeling of microstructure evolution was conducted using the modified Radiation Induced Microstructure Evolution (RIME) model, which utilizes a mean field rate theory approach with grouped cluster dynamics. Irradiations were performed with 5 MeV raster-scanned Fe{sup 2+} ions on samples pre-implanted with 10 atom parts per million He. The swelling, dislocation and precipitate evolution at very high dpa was determined using Analytical Electron Microscopy in Scanning Transmission Electron Microscopy (STEM) mode. Experimental results were then interpreted using the RIME model. A microstructure consisting only of dislocations and voids is insufficient to account for the swelling evolution observed experimentally at high damage levels in a complicated microstructure such as irradiated alloy HT9. G phase was found to have a minimal effect on either void or dislocation evolution. M{sub 2}X played two roles; a variable biased sink for defects, and as a vehicle for removal of carbon from solution, thus promoting void growth. When accounting for all microstructure interactions, swelling at high damage levels is a dynamic process that continues to respond to other changes in the microstructure as long as they occur.

  18. The irradiation creep characteristics of graphite to high fluences

    International Nuclear Information System (INIS)

    Kennedy, C.R.; Cundy, M.; Kleist, G.

    1988-01-01

    High-temperature gas-cooled reactors (HTGR) have massive blocks of graphite with thermal and neutron-flux gradients causing high internal stresses. Thermal stresses are transient; however, stresses generated by differential growth due to neutron damage continue to increase with time. Fortunately, graphite also experiences creep under irradiation allowing relaxation of stresses to nominally safe levels. Because of complexity of irradiation creep experiments, data demonstrating this phenomenon are generally limited to fairly low fluences compared to the overall fluences expected in most reactors. Notable exceptions have been experiments at 300/degree/C and 500/degree/C run at Petten under tension and compression creep stresses to fluences greater than 4 /times/ 10 26 (E > 50 keV) neutrons/m 2 . This study complements the previous results by extending the irradiation temperature to 900/degree/C. 2 refs., 3 figs

  19. Nova performance at ultra high fluence levels

    International Nuclear Information System (INIS)

    Hunt, J.T.

    1986-01-01

    Nova is a ten beam high power Nd:glass laser used for interial confinement fusion research. It was operated in the high power high energy regime following the completion of construction in December 1984. During this period several interesting nonlinear optical phenomena were observed. These phenomena are discussed in the text. 11 refs., 5 figs

  20. Ion Irradiation Damage in Zirconate and Titanate Ceramics for Pu Disposition

    International Nuclear Information System (INIS)

    Stewart, Martin W.; Begg, Bruce D.; Finnie, K.; Colella, Michael; Li, H.; McLeod, Terry; Smith, Katherine L.; Zhang, Zhaoming; Weber, William J.; Thevuthasan, Suntharampillai

    2004-01-01

    In this paper, we discuss the effect of ion irradiation on pyrochlore-rich titanate and defect-fluorite zirconate ceramics designed for plutonium immobilization. Samples, with Ce as an analogue for Pu, were made via oxide routes and consolidated by cold-pressing and sintering. Ion irradiation damage was carried out with 2 MeV Au2+ ions to a fluence of 5 ions nm-2 in the accelerator facilities within the Environmental Molecular Sciences Laboratory at Pacific Northwest National Laboratory. Irradiated and non-irradiated samples were examined by x-ray diffraction, scanning and transmission electron microscopy, x-ray photoelectron and infrared spectroscopy, and spectroscopic ellipsometry. Samples underwent accelerated leach testing at pH 1.75 (nitric acid) at 90 C for 28 days. The zirconate samples were more ion-irradiation damage resistant than the titanate samples, showing little change after ion-irradiation whereas the titanate samples formed an amorphous surface layer ∼ 500 nm thick. While all samples had high aqueous durability, the titanate leach rate was ∼ 5 times that of the zirconate. The ion-irradiation increased the leach rate of the titanate without impurities by ∼ 5 times. The difference in the leach rates between irradiated and unirradiated zirconate samples is small. However, the zirconates were less able to incorporate impurities than the titanate ceramics and required higher sintering temperatures, ∼ 1500 C compared to 1350 C for the titanates.

  1. Development of heavy-ion irradiation technique for single-event in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Nemoto, Norio; Akutsu, Takao; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Naitoh, Ichiro; Itoh, Hisayoshi; Agematsu, Takashi; Kamiya, Tomihiro; Nashiyama, Isamu

    1997-03-01

    Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

  2. Effect of swift heavy ion irradiation on deep levels in Au /n-Si (100) Schottky diode studied by deep level transient spectroscopy

    Science.gov (United States)

    Kumar, Sandeep; Katharria, Y. S.; Kumar, Sugam; Kanjilal, D.

    2007-12-01

    In situ deep level transient spectroscopy has been applied to investigate the influence of 100MeV Si7+ ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5×109to1×1012ions cm-2. The swift heavy ion irradiation introduces a deep level at Ec-0.32eV. It is found that initially, trap level concentration of the energy level at Ec-0.40eV increases with irradiation up to a fluence value of 1×1010cm-2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5×1010cm-2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

  3. Nanoscale transformation of sp2 to sp3 of graphite by slow highly charged ion irradiation

    International Nuclear Information System (INIS)

    Meguro, T.; Hida, A.; Koguchi, Y.; Miyamoto, S.; Yamamoto, Y.; Takai, H.; Maeda, K.; Aoyagi, Y.

    2003-01-01

    Nanoscale transformation of electronic states by highly charged ion (HCI) impact on graphite surfaces is described. The high potential energy of slow HCI, which induces multiple emission of electrons from the surface, provides a strong modification of the electronic states of the local area upon graphite surfaces. The HCI impact and the subsequent surface treatment either by electron injection from a scanning tunneling microscopy tip or by He-Cd laser irradiation induce a localized transition from sp 2 to sp 3 hybridization in graphite, resulting in the formation of nanoscale diamond-like structures (nanodiamond) at the impact region. From Raman spectroscopic measurements on sp 2 related peaks, it is found that the HCI irradiation creates vacancy complexes in contrast to ions having a lower charge state, which generate single vacancies. It is of interest that a single impact of HCI creates one nanodiamond structure, suggesting potential applications of HCI in nanoscale material processing

  4. Recrystallization effects of swift heavy {sup 209}Bi ions irradiation on electrical degradation in 4H-SiC Schottky barrier diode

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Zhimei; Ma, Yao; Gong, Min [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Li, Yun [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Huang, Mingmin [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Gao, Bo [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Zhao, Xin, E-mail: zhaoxin1234@scu.edu.cn [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

    2017-06-15

    In this paper, the phenomenon that the recrystallization effects of swift heavy {sup 209}Bi ions irradiation can partially recovery damage with more than 1 × 10{sup 10} ions/cm{sup 2} is investigated by the degradation of the electrical characteristics of 4H-SiC Schottky barrier diode (SBD) with swift heavy ion irradiation. Deep level transient spectroscopy (DLTS) and Current-Voltage (I-V) measurements clearly indicated that E{sub 0.62} defect induced by swift heavy ion irradiation, which was a recombination center, could result in the increase of reverse leakage current (I{sub R}) at fluence less than 1 × 10{sup 9} ions/cm{sup 2} and the recovery of I{sub R} at fluence more than 1 × 10{sup 10} ions/cm{sup 2} in 4H-SiC SBD. The variation tendency of I{sub R} is consisted with the change of E{sub 0.62} defect. Furthermore, it is reasonable explanation that the damage or defect formed at low fluence in SiC may be recovered by further swift heavy ion irradiation with high fluence, which is due to the melting with the ion tracks of the amorphous zones through a thermal spike and subsequent epitaxial recrystallization initiated from the neighboring crystalline regions.

  5. Role of carbon impurities on the surface morphology evolution of tungsten under high dose helium ion irradiation

    International Nuclear Information System (INIS)

    Al-Ajlony, A.; Tripathi, J.K.; Hassanein, A.

    2015-01-01

    The effect of carbon impurities on the surface evolution (e.g., fuzz formation) of tungsten (W) surface during 300 eV He ions irradiation was studied. Several tungsten samples were irradiated by He ion beam with a various carbon ions percentage. The presence of minute carbon contamination within the He ion beam was found to be effective in preventing the fuzz formation. At higher carbon concentration, the W surface was found to be fully covered with a thick graphitic layer on the top of tungsten carbide (WC) layer that cover the sample surface. Lowering the ion beam carbon percentage was effective in a significant reduction in the thickness of the surface graphite layer. Under these conditions the W surface was also found to be immune for the fuzz formation. The effect of W fuzz prevention by the WC formation on the sample surface was more noticeable when the He ion beam had much lower carbon (C) ions content (0.01% C). In this case, the fuzz formation was prevented on the vast majority of the W sample surface, while W fuzz was found in limited and isolated areas. The W surface also shows good resistance to morphology evolution when bombarded by high flux of pure H ions at 900 °C. - Highlights: • Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. • The effect of adding various percentage of carbon impurity to the He ion beam on the trend of W fuzz formation was studied. • Mitigation of W fuzz formation due to addition of small percentage of carbon to the He ion beam is reported. • The formation of long W nanowires due to He ion beam irradiation mixed with 0.01% carbon ions is reported.

  6. Microstructural evolution in low alloy steels under high dose ion irradiation

    International Nuclear Information System (INIS)

    Fujii, Katsuhiko; Fukuya, Koji; Ohkubo, Tadakatsu; Hono, Kazuhiro

    2006-01-01

    Radiation hardening and microstructural evolution in low Cu A533B steels (0.03 wt% Cu) irradiated by 3 MeV Ni 2+ ions at 290degC to 1 dpa were investigated by ultra-micro hardness measurement and leaser type three dimensional atom probe analysis. Mn-Ni-Si enriched precipitates were detected in the samples irradiated to 1 dpa by 3DAP analysis. The well-defined precipitates had a size of less than 4 nm, and the number density increased with dose. The formation of the precipitates under high dose rate irradiation suggested that Mn-Ni-Si enriched precipitates were formed by a process such as radiation induced precipitation rather than by thermal equilibrium process. The increase of yield stress calculated by size and number density of the precipitates in 1 dpa irradiated sample using the similar value of hardening efficiency to that of Cu rich precipitates was consistent with that estimated by data of increases of hardness measured by nano-indentation. The result indicates that effects of Mn-Ni-Si enriched precipitates on radiation embrittlement are similar to those of Cu rich precipitates. (author)

  7. Ion irradiation studies of construction materials for high-power accelerators

    Science.gov (United States)

    Mustafin, E.; Seidl, T.; Plotnikov, A.; Strašík, I.; Pavlović, M.; Miglierini, M.; Stanćek, S.; Fertman, A.; Lanćok, A.

    The paper reviews the activities and reports the current results of GSI-INTAS projects that are dealing with investigations of construction materials for high-power accelerators and their components. Three types of materials have been investigated, namely metals (stainless steel and copper), metallic glasses (Nanoperm, Finemet and Vitrovac) and organic materials (polyimide insulators and glass fiber reinforced plastics/GFRP). The materials were irradiated by different ion beams with various fluencies and energies. The influence of radiation on selected physical properties of these materials has been investigated with the aid of gamma-ray spectroscopy, transmission Mössbauer spectroscopy (TMS), conversion electrons Mössbauer spectroscopy (CEMS), optical spectroscopy (IR and UV/VIS) and other analytical methods. Some experiments were accompanied with computer simulations by FLUKA, SHIELD and SRIM codes. Validity of the codes was verified by comparison of the simulation results with experiments. After the validation, the codes were used to complete the data that could not be obtained experimentally.

  8. Ion irradiated graphite exposed to fusion-relevant deuterium plasma

    International Nuclear Information System (INIS)

    Deslandes, Alec; Guenette, Mathew C.; Corr, Cormac S.; Karatchevtseva, Inna; Thomsen, Lars; Ionescu, Mihail; Lumpkin, Gregory R.; Riley, Daniel P.

    2014-01-01

    Graphite samples were irradiated with 5 MeV carbon ions to simulate the damage caused by collision cascades from neutron irradiation in a fusion environment. The ion irradiated graphite samples were then exposed to a deuterium plasma in the linear plasma device, MAGPIE, for a total ion fluence of ∼1 × 10 24 ions m −2 . Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopy were used to characterize modifications to the graphitic structure. Ion irradiation was observed to decrease the graphitic content and induce disorder in the graphite. Subsequent plasma exposure decreased the graphitic content further. Structural and surface chemistry changes were observed to be greatest for the sample irradiated with the greatest fluence of MeV ions. D retention was measured using elastic recoil detection analysis and showed that ion irradiation increased the amount of retained deuterium in graphite by a factor of four

  9. Enhanced electrical conductivity in Xe ion irradiated CNT based transparent conducting electrode on PET substrate

    Science.gov (United States)

    Surbhi; Sharma, Vikas; Singh, Satyavir; Garg, Priyanka; Asokan, K.; Sachdev, Kanupriya

    2018-02-01

    An investigation of MWCNT-based hybrid electrode films with improved electrical conductivity after Xe ion irradiation is reported. A multilayer hybrid structure of Ag-MWCNT layer embedded in between two ZnO layers was fabricated and evaluated, pre and post 100 keV Xe ion irradiation, for their performance as Transparent Conducting Electrode in terms of their optical and electrical properties. X-ray diffraction pattern exhibits highly c-axis oriented ZnO films with a small variation in lattice parameters with an increase in ion fluence. There is no significant change in the surface roughness of these films. Raman spectra were used to confirm the presence of CNT. The pristine multilayer films exhibit an average transmittance of ˜70% in the entire visible region and the transmittance increases with Xe ion fluence. A significant enhancement in electrical conductivity post-Xe ion irradiation viz from 1.14 × 10-7 Ω-1 cm-1 (pristine) to 7.04 × 103 Ω-1 cm-1 is seen which is due to the high connectivity in the top layer with Ag-CNT hybrid layer facilitating the smooth transfer of electrons.

  10. The co-evolution of microstructure features in self-ion irradiated HT9 at very high damage levels

    Science.gov (United States)

    Getto, Elizabeth Margaret

    The objective of this study was to understand the co-evolution of microstructure features in self-ion irradiated HT9 at very high damage levels. HT9 (heat 84425) was pre-implanted with 10 atom parts per million helium and then irradiated with 5 MeV Fe++ in the temperature range of 440-480°C to 188 dpa. A damage dependence study from 75 to 650 dpa was performed at the peak swelling temperature of 460°C. The swelling, dislocation and precipitate evolution was determined using Analytic Electron Microscopes in both Conventional Transmission electron microscopy (CTEM) and Scanning Transmission Electron Microscopy (STEM) modes. Void swelling reached a nominally linear rate of 0.03%/dpa from 188 to 650 dpa at 460°C. G phase precipitates were observed by 75 dpa and grew linearly up to 650 dpa. M 2X was observed by 250 dpa and peaked in volume fraction at 450 dpa. Dislocation loop evolution was observed up to 650 dpa including a step change in diameter between 375 and 450 dpa; which correlated with nucleation and growth of M2X. The experimental results were interpreted using a rate theory model, the Radiation Induced Microstructure Evolution (RIME), in the damage range from 188 to 650 dpa. A simple system of voids and dislocations was modeled in which the dislocations measured from experiment were used as input, or the dislocations were allowed to evolve dynamically, resulting in swelling that was overestimated by 63% relative to that observed experimentally. G phase had limited effect on the void or dislocation behavior. The behavior of M2X within the microstructure was characterized as a direct effect as a coherent sink, and as an indirect effect in consuming carbon from the matrix, which had the largest impact on both void and dislocation behavior. A slowly monotonically increasing swelling rate was observed both experimentally and computationally, with swelling rates of ˜0.025%/dpa and ˜0.036%/dpa before and after 450 dpa. The agreement in void behavior between

  11. Effect of Si ion irradiation on polycrystalline CdS thin film grown from novel photochemical deposition technique

    International Nuclear Information System (INIS)

    Soundeswaran, S.; Senthil Kumar, O.; Ramasamy, P.; Kabi Raj, D.; Avasthi, D.K.; Dhanasekaran, R.

    2005-01-01

    CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH 3 COO) 2 and Na 2 S 2 O 3 , and pH is controlled in an acidic region by adding H 2 SO 4 . The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1x10 11 , 1x10 12 , 1x10 13 and 1x10 14 ions/cm 2 using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences

  12. Ionic conduction studies in Li3+ ion irradiated P(VDF-HFP)-(PC + DEC)-LiCF3SO3 gel polymer electrolyte

    International Nuclear Information System (INIS)

    Saikia, D.; Hussain, A.M.P.; Kumar, A.; Singh, F.; Avasthi, D.K.

    2006-01-01

    In an attempt to increase the Li ion diffusivity in gel polymer electrolytes, the effects of Li 3+ ion irradiation in P(VDF-HFP)-(PC + DEC)-LiCF 3 SO 3 electrolyte system, with five different fluences, is studied. Irradiation with swift heavy ions shows enhancement in conductivity at low fluences and decreased in conductivity at higher fluences with respect to pristine polymer electrolyte films. Maximum room temperature ionic conductivity after irradiation is found to be 2.6 x 10 -3 S/cm. This interesting result could be attributed to the fact that, higher fluence provides critical activation energy for cross-linking and crystallization to occur, which results in decrease in ionic conductivity. XRD results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤10 11 ions/cm 2 ) and increase in crystallinity at high fluences (>10 11 ions/cm 2 ). In FTIR spectra the absorption band intensities around 3025 cm -1 and 2985 cm -1 decrease upon irradiation with a fluence of 5 x 10 1 ions/cm 2 suggesting chain scission and increase upon irradiation with a fluence of 5 x 10 12 ions/cm 2 indicating cross-linking. FTIR analyses corroborate the conductivity and XRD results

  13. Formation of tungsten oxide nanowires by ion irradiation and vacuum annealing

    Science.gov (United States)

    Zheng, Xu-Dong; Ren, Feng; Wu, Heng-Yi; Qin, Wen-Jing; Jiang, Chang-Zhong

    2018-04-01

    Here we reported the fabrication of tungsten oxide (WO3-x ) nanowires by Ar+ ion irradiation of WO3 thin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 106-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.

  14. Effects of high thermal neutron fluences on Type 6061 aluminum

    International Nuclear Information System (INIS)

    Weeks, J.R.; Czajkowski, C.J.; Farrell, K.

    1992-01-01

    The control rod drive follower tubes of the High Flux Beam Reactor are contructed from precipitation-hardened 6061-T6 aluminum alloy and they operate in the high thermal neutron flux regions of the core. It is shown that large thermal neutron fluences up to ∼4 x 10 23 n/cm 2 at 333K cause large increases in tensile strength and relatively modest decreases in tensile elongation while significantly reducing the notch impact toughness at room temperature. These changes are attributed to the development of a fine distribution of precipitates of amorphous silicon of which about 8% is produced radiogenically. A proposed role of thermal-to-fast flux ratio is discussed

  15. Solid State Track Recorder fission rate measurements at high neutron fluence and high temperature

    International Nuclear Information System (INIS)

    Ruddy, F.H.; Roberts, J.H.; Gold, R.

    1985-01-01

    Solid State Track Recorder (SSTR) techniques have been used to measure 239-Pu, 235-U, and 237-Np fission rates for total neutron fluences approaching 5 x 10 17 n/cm 2 at temperatures in the range 680 to 830 0 F. Natural quartz crystal SSTRs were used to withstand the high temperature environment and ultra low-mass fissionable deposits of the three isotopes were required to yield scannable track densities at the high neutron fluences. The results of these high temperature, high neutron fluence measurements are reported

  16. Heavy Ion Irradiation Effects in Zirconium Nitride

    International Nuclear Information System (INIS)

    Egeland, G.W.; Bond, G.M.; Valdez, J.A.; Swadener, J.G.; McClellan, K.J.; Maloy, S.A.; Sickafus, K.E.; Oliver, B.

    2004-01-01

    Polycrystalline zirconium nitride (ZrN) samples were irradiated with He + , Kr ++ , and Xe ++ ions to high (>1.10 16 ions/cm 2 ) fluences at ∼100 K. Following ion irradiation, transmission electron microscopy (TEM) and grazing incidence X-ray diffraction (GIXRD) were used to analyze the microstructure and crystal structure of the post-irradiated material. For ion doses equivalent to approximately 200 displacements per atom (dpa), ZrN was found to resist any amorphization transformation, based on TEM observations. At very high displacement damage doses, GIXRD measurements revealed tetragonal splitting of some of the diffraction maxima (maxima which are associated with cubic ZrN prior to irradiation). In addition to TEM and GIXRD, mechanical property changes were characterized using nano-indentation. Nano-indentation revealed no change in elastic modulus of ZrN with increasing ion dose, while the hardness of the irradiated ZrN was found to increase significantly with ion dose. Finally, He + ion implanted ZrN samples were annealed to examine He gas retention properties of ZrN as a function of annealing temperature. He gas release was measured using a residual gas analysis (RGA) spectrometer. RGA measurements were performed on He-implanted ZrN samples and on ZrN samples that had also been irradiated with Xe ++ ions, in order to introduce high levels of displacive radiation damage into the matrix. He evolution studies revealed that ZrN samples with high levels of displacement damage due to Xe implantation, show a lower temperature threshold for He release than do pristine ZrN samples. (authors)

  17. Simulation of high fluence swelling behavior in technological materials

    International Nuclear Information System (INIS)

    Garner, F.A.; Powell, R.W.; Diamond, S.; Lauritzen, T.; Rowcliffe, A.F.; Sprague, J.A.; Keefer, D.

    1977-06-01

    The U.S. Breeder Reactor Program is employing charged particle irradiation experiments at accelerated displacement rates to simulate neutron-induced microstructural changes in materials of technological interest. Applications of the simulation technique range from the study of fundamental microstructural mechanisms to the development of predictions of the high fluence swelling behavior of candidate alloys for breeder reactor ducts and fuel cladding. An exact equivalence probably cannot be established between all facets of the microstructural evolution which occurs in the disparate charged-particle and neutron environments. To aid in the correlation of data developed in the two environments an assessment has been made of the factors influencing the simulation process. A series of intercorrelation programs and analysis activities have been conducted to identify and explore the relevant phenomena. The factors found to exert substantial influence on the correlation process fall into two categories, one which deals with those variables which are atypical of the neutron environment and one which deals with the additional factors which arise due to the large differences in displacement rate of the two irradiation environments. While the various simulation techniques have been invaluable in determining the basic mechanisms and parametric dependencies of swelling, the potential of these tools in the confident prediction of swelling at high neutron fluence has yet to be realized. The basic problem lies in the inability of the simulation technique to reproduce the early microstructural development in the period that precedes and encompasses the incubation of voids. The concepts of temperature shift and dose equivalency have also been found to be more complicated than previously imagined. Preconditioning of metals in a neutron environment prior to simulation testing is now being employed in order to provide more appropriate starting microstructures

  18. Structural and electrical evolution of He ion irradiated hydrocarbon films observed by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Fan, Hongyu; Yang, Deming; Sun, Li; Yang, Qi; Niu, Jinhai; Bi, Zhenhua; Liu, Dongping

    2013-01-01

    Polymer-like hydrocarbon films are irradiated with 100 keV He ion at the fluences of 1.0 × 10 15 –1.0 × 10 17 ions/cm 2 or at the irradiation temperature ranging from 25 to 600 °C. Conductive atomic force microscopy (CAFM) has been used to evaluate the nanoscale electron conducting properties of these irradiated hydrocarbon films. Nanoscale and conducting defects have been formed in the hydrocarbon films irradiated at a relatively high ion fluence (1.0 × 10 17 ions/cm 2 ) or an elevated sample temperature. Analysis indicates that He ion irradiation results in the evolution of polymer-like hydrocarbon into a dense structure containing a large fraction of sp 2 carbon clusters. The sp 2 carbon clusters formed in irradiated hydrocarbon films can contribute to the formation of filament-like conducting channels with a relatively high local field-enhancing factor. Measurements indicate that the growth of nanoscale defects due to He ion irradiation can result in the surface swelling of irradiated hydrocarbon films at a relatively high ion fluences or elevated temperature

  19. Structural and electrical evolution of He ion irradiated hydrocarbon films observed by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Hongyu [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Yang, Deming [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Sun, Li [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Physics, Liaoning Normal University, Dalian 116023 (China); Yang, Qi; Niu, Jinhai; Bi, Zhenhua [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Liu, Dongping, E-mail: dongping.liu@dlnu.edu.cn [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Fujian Key Laboratory for Plasma and Magnetic Resonance, Department of Electronic Science, Aeronautics, School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian 361005 (China)

    2013-10-01

    Polymer-like hydrocarbon films are irradiated with 100 keV He ion at the fluences of 1.0 × 10{sup 15}–1.0 × 10{sup 17} ions/cm{sup 2} or at the irradiation temperature ranging from 25 to 600 °C. Conductive atomic force microscopy (CAFM) has been used to evaluate the nanoscale electron conducting properties of these irradiated hydrocarbon films. Nanoscale and conducting defects have been formed in the hydrocarbon films irradiated at a relatively high ion fluence (1.0 × 10{sup 17} ions/cm{sup 2}) or an elevated sample temperature. Analysis indicates that He ion irradiation results in the evolution of polymer-like hydrocarbon into a dense structure containing a large fraction of sp{sup 2} carbon clusters. The sp{sup 2} carbon clusters formed in irradiated hydrocarbon films can contribute to the formation of filament-like conducting channels with a relatively high local field-enhancing factor. Measurements indicate that the growth of nanoscale defects due to He ion irradiation can result in the surface swelling of irradiated hydrocarbon films at a relatively high ion fluences or elevated temperature.

  20. Magnetic and topographical modifications of amorphous Co–Fe thin films induced by high energy Ag{sup 7+} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Pookat, G.; Hysen, T. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Al-Harthi, S.H.; Al-Omari, I.A. [Department of Physics, Sultan Qaboos University, Muscat, P.O. Box 36, Code 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

    2013-09-01

    We have investigated the effects of swift heavy ion irradiation on thermally evaporated 44 nm thick, amorphous Co{sub 77}Fe{sub 23} thin films on silicon substrates using 100 MeV Ag{sup 7+} ions fluences of 1 × 10{sup 11} ions/cm{sup 2}, 1 × 10{sup 12} ions/cm{sup 2}, 1 × 10{sup 13} ions/cm{sup 2}, and 3 × 10{sup 13} ions/cm{sup 2}. The structural modifications upon swift heavy irradiation were investigated using glancing angle X-ray diffraction. The surface morphological evolution of thin film with irradiation was studied using Atomic Force Microscopy. Power spectral density analysis was used to correlate the roughness variation with structural modifications investigated using X-ray diffraction. Magnetic measurements were carried out using vibrating sample magnetometry and the observed variation in coercivity of the irradiated films is explained on the basis of stress relaxation. Magnetic force microscopy images are subjected to analysis using the scanning probe image processor software. These results are in agreement with the results obtained using vibrating sample magnetometry. The magnetic and structural properties are correlated.

  1. Investigations of Atomic Transport Induced by Heavy Ion Irradiation

    Science.gov (United States)

    Banwell, Thomas Clyde

    The mechanisms of atomic transport induced by ion irradiation generally fall into the categories of anisotropic or isotropic processes. Typical examples of these are recoil implantation and cascade mixing, respectively. We have measured the interaction of these processes in the mixing of Ti/SiO(,2)/Si, Cr/SiO(,2)/Si and Ni/SiO(,2)/Si multi-layers irradiated with Xe at fluences of 0.01 - 10 x 10('15)cm('-2). The fluence dependence of net metal transport into the underlying layers was measured with different thicknesses of SiO(,2) and different sample temperatures during irradiation (-196 to 500C). There is a linear dependence at low fluences. At high fluences, a square-root behavior predominates. For thin SiO(,2) layers (primary recoils is quite pronounced since the gross mixing is small. A significant correlation exists between the mixing and the energy deposited through elastic collisions F(,D ). Several models are examined in an attempt to describe the transport process in Ni/SiO(,2). It is likely that injection of Ni by secondary recoil implantation is primarily responsible for getting Ni into the SiO(,2). Secondary recoil injection is thought to scale with F(,D). Trends in the mixing rates indicate that the dominant mechanism for Ti and Cr could be the same as for Ni. The processes of atomic transport and phase formation clearly fail to be separable at higher temperatures. A positive correlation with chemical reactivity emerges at higher irradiation temperatures. The temperature at which rapid mixing occurs is not much below that for spontaneous thermal reaction. Less Ni is retained in the SiO(,2) at high irradiation temperatures. Ni incorporated in the SiO(,2) by low temperature irradiation is not expelled during a consecutive high temperature irradiation. The Ni remains trapped within larger clusters during a sequential 500C irradiation. (Abstract shortened with permission of author.).

  2. The potential application of ultra-nanocrystalline diamond films for heavy ion irradiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Huang-Chin [Department of Physics, Tamkang University, Tamsui, New-Taipei, Taiwan 251 (China); Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 300 (China); Chen, Shih-Show [Department of Physics, Tamkang University, Tamsui, New-Taipei, Taiwan 251 (China); Department of Information Technology and Mobile Communication, Taipei College of Maritime Technology, Tamsui, New-Taipei, Taiwan 251 (China); Wang, Wei-Cheng; Lin, I-Nan; Chang, Ching-Lin [Department of Physics, Tamkang University, Tamsui, New-Taipei, Taiwan 251 (China); Lee, Chi-Young [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 300 (China); Guo, Jinghua [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2013-06-15

    The potential of utilizing the ultra-nanocrystalline (UNCD) films for detecting the Au-ion irradiation was investigated. When the fluence for Au-ion irradiation is lower than the critical value (f{sub c}= 5.0 Multiplication-Sign 10{sup 12} ions/cm{sup 2}) the turn-on field for electron field emission (EFE) process of the UNCD films decreased systematically with the increase in fluence that is correlated with the increase in sp{sup 2}-bonded phase ({pi}{sup *}-band in EELS) due to the Au-ion irradiation. The EFE properties changed irregularly, when the fluence for Au-ion irradiation exceeds this critical value. The transmission electron microscopic microstructural examinations, in conjunction with EELS spectroscopic studies, reveal that the structural change preferentially occurred in the diamond-to-Si interface for the samples experienced over critical fluence of Au-ion irradiation, viz. the crystalline SiC phase was induced in the interfacial region and the thickness of the interface decreased. These observations implied that the UNCD films could be used as irradiation detectors when the fluence for Au-ion irradiation does not exceed such a critical value.

  3. Effect of simultaneous ion irradiation on microstructural change of SiC/SiC composites at high temperature

    International Nuclear Information System (INIS)

    Taguchi, T.; Wakai, E.; Igawa, N.; Nogami, S.; Snead, L.L.; Hasegawa, A.; Jitsukawa, S.

    2002-01-01

    The effect of simultaneous triple ion irradiation of He, H and Si on microstructural evolution of two kinds of SiC/SiC composites (HNS composite (using Hi-Nicalon type S SiC fiber) and TSA composite (using Tyranno SA SiC fiber)) at 1000 deg. C has been investigated. The microstructure observations of SiC/SiC composites irradiated to 10 dpa were examined by transmission electron microscopy. He bubbles were hardly formed in matrix of TSA composite, but many helium bubbles and some cracks were observed at grain boundaries of matrix of HNS composite. He bubbles and cracks were not, on the other hand, observed in the both fiber fabrics of HNS and TSA composites. Debonding between fiber and carbon layer following irradiation region was not observed in the both composites. Under these irradiation conditions, TSA composite showed the better microstructural stability against ion beams irradiation than one of HNS composite

  4. Comparison of embrittlement trend curves to high fluence surveillance results

    International Nuclear Information System (INIS)

    Bogaert, A.S.; Gerard, R.; Chaouadi, R.

    2011-01-01

    In the regulatory justification of the integrity of the reactor pressure vessels (RPV) for long term operation, use is made of predictive formulas (also called trend curves) to evaluate the RPV embrittlement (expressed in terms of RTNDT shifts) in function of fluence, chemical composition and in some cases temperature, neutron flux or product form. It has been shown recently that some of the existing or proposed trend curves tend to underpredict high dose embrittlement. Due to the scarcity of representative surveillance data at high dose, some test reactor results were used in these evaluations and raise the issue of representativeness of the accelerated test reactor irradiations (dose rate effects). In Belgium the surveillance capsules withdrawal schedule was modified in the nineties in order to obtain results corresponding to 60 years of operation or more with the initial surveillance program. Some of these results are already available and offer a good opportunity to test the validity of the predictive formulas at high dose. In addition, advanced surveillance methods are used in Belgium like the Master Curve, increased tensile tests, and microstructural investigations. These techniques made it possible to show the conservatism of the regulatory approach and to demonstrate increased margins, especially for the first generation units. In this paper the surveillance results are compared to different predictive formulas, as well as to an engineering hardening model developed at SCK.CEN. Generally accepted property-to-property correlations are critically revisited. Conclusions are made on the reliability and applicability of the embrittlement trend curves. (authors)

  5. In situ crystallization of sputter-deposited TiNi by ion irradiation

    International Nuclear Information System (INIS)

    Ikenaga, Noriaki; Kishi, Yoichi; Yajima, Zenjiro; Sakudo, Noriyuki

    2013-01-01

    Highlights: ► We developed a sputtering deposition process equipped with an ion irradiation system. ► Ion irradiation enables crystallization at lower substrate temperature. ► Ion fluence has an effective range for low-temperature crystallization. ► Crystallized films made on polyimide by the process show the shape memory effect. -- Abstract: TiNi is well known as a typical shape-memory alloy, and the shape-memory property appears only when the structure is crystalline. Until recently, the material has been formed as amorphous film by single-target sputtering deposition at first and then crystallized by being annealed at high temperature over 500 °C. Therefore, it has been difficult to make crystalline TiNi film directly on a substrate of polymer-based material because of the low heat resistance of substrate. In order to realize an actuator from the crystallized TiNi film on polymer substrates, the substrate temperature should be kept below 200 °C throughout the whole process. In our previous studies we have found that deposited film can be crystallized at very low temperature without annealing but with simultaneous irradiation of Ar ions during sputter-deposition. And we have also demonstrated the shape-memory effect with the TiNi film made by the new process. In order to investigate what parameters of the process contribute to the low-temperature crystallization, we have focused to the ion fluence of the ion irradiation. Resultantly, it was found that the transition from amorphous structure to crystal one has a threshold range of ion fluence

  6. Solutions to defect-related problems in implanted silicon by controlled injection of vacancies by high-energy ion irradiation

    International Nuclear Information System (INIS)

    Roth, E.G.; Holland, O.W.; Duggan, J.L.

    1999-01-01

    Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an attempt to reduce or eliminate this interfacial defect band. High-energy, ion implantation is known to inject a vacancy excess in this region. Vacancies were implanted at a concentration coincident with the excess interstitials below the a-c interface to promote recombination between the two defect species. Preliminary results indicate that a critical fluence, i.e., a sufficient vacancy concentration, will eliminate the interstitial defects. The effect of the reduction or elimination of these interfacial defects upon TED of boron will be discussed. Rutherford backscattering/channeling and cross section transmission electron microscopy analyses were used to characterize the defect structure within the implanted layer. Secondary ion mass spectrometry was used to profile the dopant distributions. copyright 1999 American Institute of Physics

  7. Fluorescence spectra of Rhodamine 6G for high fluence excitation laser radiation

    CERN Document Server

    Hung, J; Olaizola, A M

    2003-01-01

    Fluorescence spectral changes of Rhodamine 6G in ethanol and glycerol solutions and deposited as a film on a silica surface have been studied using a wide range of pumping field fluence at 532 nm at room temperature. Blue shift of the fluorescence spectra and fluorescence quenching of the dye molecule in solution are observed at high excitation fluence values. Such effects are not reported for the film sample. The effects are interpreted as the result of population redistribution in the solute-solvent molecular system induced by the high fluence field and the fluence dependence of the radiationless decay mechanism.

  8. Surface amorphization in Al2O3 induced by swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

    2013-01-01

    Microstructure in single crystalline Al 2 O 3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 10 13 to 1.0 × 10 15 ions/cm 2 . After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al 2 O 3 , high-density S e causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 10 13 ions/cm 2 for single crystalline Al 2 O 3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al 2 O 3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al 2 O 3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 10 14 ions/cm 2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures

  9. Surface amorphization in Al2O3 induced by swift heavy ion irradiation

    Science.gov (United States)

    Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

    2013-11-01

    Microstructure in single crystalline Al2O3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 1013 to 1.0 × 1015 ions/cm2. After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al2O3, high-density Se causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 1013 ions/cm2 for single crystalline Al2O3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al2O3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al2O3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 1014 ions/cm2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures.

  10. Density changes in amorphous Pd80Si20 during low temperature ion irradiation

    International Nuclear Information System (INIS)

    Schumacher, G.; Birtcher, R.C.; Rehn, L.E.

    1994-11-01

    Density changes in amorphous Pd 80 Si 20 during ion irradiation below 100K were detected by in situ HVEM measurements of the changes in specimen length as a function of ion fluence. A decrease in mass density as a function of the ion fluence was observed. The saturation value of the change in mass density was determined to be approximately -1.2%

  11. Anti-biofilm activity of Fe heavy ion irradiated polycarbonate

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, R.P. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Hareesh, K., E-mail: appi.2907@gmail.com [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Bankar, A. [Department of Microbiology, Waghire College, Pune 412301 (India); Sanjeev, Ganesh [Microtron Centre, Department of Studies in Physics, Mangalore University, Mangalore 574166 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Centre, Arun Asaf Ali Marg, New Delhi 110067 (India); Dahiwale, S.S.; Bhoraskar, V.N. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-10-01

    Highlights: • PC films were irradiated by 60 and 120 MeV Fe ions. • Irradiated PC films showed changes in its physical and chemical properties. • Irradiated PC also showed more anti-biofilm activity compared to pristine PC. - Abstract: Polycarbonate (PC) polymers were investigated before and after high energy heavy ion irradiation for anti-bacterial properties. These PC films were irradiated by Fe heavy ions with two energies, viz, 60 and 120 MeV, at different fluences in the range from 1 × 10{sup 11} ions/cm{sup 2} to 1 × 10{sup 13} ions/cm{sup 2}. UV-Visible spectroscopic results showed optical band gap decreased with increase in ion fluences due to chain scission mainly at carbonyl group of PC which is also corroborated by Fourier transform infrared spectroscopic results. X-ray diffractogram results showed decrease in crystallinity of PC after irradiation which leads to decrease in molecular weight. This is confirmed by rheological studies and also by differential scanning calorimetric results. The irradiated PC samples showed modification in their surfaces prevents biofilm formation of human pathogen, Salmonella typhi.

  12. Nonlocal ultrafast magnetization dynamics in the high fluence limit

    NARCIS (Netherlands)

    Kuiper, K.C.; Malinowski, G.; Dalla Longa, F.; Koopmans, B.

    2011-01-01

    In order to explain a number of recent experimental observations of laser-induced femtosecond demagnetization in the large fluence limit, we discuss the consequences of a recently proposed nonlocal approach. A microscopic description of spin flip scattering is implemented in an effective three

  13. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

    International Nuclear Information System (INIS)

    Paliwal, Ayushi; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

    2016-01-01

    Highlights: • Investigated the optical properties of BiFeO_3 (BFO) thin films after irradiation using SPR. • Otto configuration has been used to excite the surface plasmons using gold metal thin film. • BFO thin films were prepared by sol–gel spin coating technique. • Examined the refractive index dispersion of pristine and irradiated BFO thin film. - Abstract: Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO_3 (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol–gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au"9"+ ions at a fluence of 1 × 10"1"2 ions cm"−"2. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  14. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

    Energy Technology Data Exchange (ETDEWEB)

    Paliwal, Ayushi [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Sharma, Savita [Department of Applied Physics, Delhi Technological University, Delhi (India); Tomar, Monika [Physics Department, Miranda House, University of Delhi, Delhi 110007 (India); Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110075 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2016-07-15

    Highlights: • Investigated the optical properties of BiFeO{sub 3} (BFO) thin films after irradiation using SPR. • Otto configuration has been used to excite the surface plasmons using gold metal thin film. • BFO thin films were prepared by sol–gel spin coating technique. • Examined the refractive index dispersion of pristine and irradiated BFO thin film. - Abstract: Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO{sub 3} (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol–gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au{sup 9+} ions at a fluence of 1 × 10{sup 12} ions cm{sup −2}. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  15. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

    Science.gov (United States)

    Paliwal, Ayushi; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

    2016-07-01

    Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO3 (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol-gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au9+ ions at a fluence of 1 × 1012 ions cm-2. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  16. The accumulation of disorder, subject to saturation and sputter limitation, in ion irradiated solids

    International Nuclear Information System (INIS)

    Carter, G.; Webb, R.; Collins, R.

    1978-01-01

    The depth distribution of disorder and the depth integrated disorder produced by ion irradiation of solids is analysed theoretically as a function of increasing ion fluence when disorder saturation processes operate at all depths and the solid surface is continuously uniformly eroded by sputtering. The resulting defining equations are evaluated numerically for a Gaussian approximation to the disorder depth function with parameters appropriate to low, equal and high projectile:substrate mass ratio conditions, for several values of sputtering coefficient and effective atom displacement energy. It is shown that the form, if not the magnitude, of the integrated disorder/projectile fluence function is only weakly dependent upon these parameters. More meaningful comparison with depth resolved disorder functions is, however, possible and such a comparison is made for 100 keV Sb projectiles on a Si substrate. (author)

  17. Positron lifetime and Doppler broadening study of defects created by swift ion irradiation in sapphire

    International Nuclear Information System (INIS)

    Liszkay, L.; Gordo, P.M.; Lima, A. de; Havancsak, K.; Skuratov, V.A.; Kajcsos, Z.

    2004-01-01

    Swift ions create a defect profile penetrating deep into a solid compared to the sampling range of typical slow positron beams, which may consequently study a homogeneous zone of defected materials. To investigate the defect population created by energetic ions, we studied α-Al 2 O 3 single crystals irradiated with swift Kr ions by using conventional and pulsed positron beams. Samples irradiated with krypton at 245 MeV energy in a wide fluence range show nearly saturated positron trapping above 5 x 10 10 ions cm -2 fluence, indicating the creation of monovacancies in high concentration. At 1 x 10 14 ions cm -2 irradiation a 500 ps long lifetime component appears, showing the creation of larger voids. This threshold corresponds well to the onset of the overlap of the damage zones after Bi ion irradiation along the ion trajectories observed with microscopic methods. (orig.)

  18. Ge nano-layer fabricated by high-fluence low-energy ion implantation

    International Nuclear Information System (INIS)

    Lu Tiecheng; Dun Shaobo; Hu Qiang; Zhang Songbao; An Zhu; Duan Yanmin; Zhu Sha; Wei Qiangmin; Wang Lumin

    2006-01-01

    A Ge nano-layer embedded in the surface layer of an amorphous SiO 2 film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed

  19. Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

    Directory of Open Access Journals (Sweden)

    H. Hofsäss

    2011-09-01

    Full Text Available We demonstrate the generation of a persistent conductivity increase in vanadium dioxide thin films grown on single crystal silicon by irradiation with 1 GeV 238U swift heavy ions at room temperature. VO2 undergoes a temperature driven metal-insulator-transition (MIT at 67 °C. After room temperature ion irradiation with high electronic energy loss of 50 keV/nm the conductivity of the films below the transition temperature is strongly increased proportional to the ion fluence of 5·109 U/cm2 and 1·1010 U/cm2. At high temperatures the conductivity decreases slightly. The ion irradiation slightly reduces the MIT temperature. This observed conductivity change is persistent and remains after heating the samples above the transition temperature and subsequent cooling. Low temperature measurements down to 15 K show no further MIT below room temperature. Although the conductivity increase after irradiation at such low fluences is due to single ion track effects, atomic force microscopy (AFM measurements do not show surface hillocks, which are characteristic for ion tracks in other materials. Conductive AFM gives no evidence for conducting ion tracks but rather suggests the existence of conducting regions around poorly conducting ion tracks, possible due to stress generation. Another explanation of the persistent conductivity change could be the ion-induced modification of a high resistivity interface layer formed during film growth between the vanadium dioxide film and the n-Silicon substrate. The swift heavy ions may generate conducting filaments through this layer, thus increasing the effective contact area. Swift heavy ion irradiation can thus be used to tune the conductivity of VO2 films on silicon substrates.

  20. Effect of ion irradiation on tensile ductility, strength and fictive temperature in metallic glass nanowires

    International Nuclear Information System (INIS)

    Magagnosc, D.J.; Kumar, G.; Schroers, J.; Felfer, P.; Cairney, J.M.; Gianola, D.S.

    2014-01-01

    Ion irradiation of thermoplastically molded Pt 57.5 Cu 14.3 Ni 5.7 P 22.5 metallic glass nanowires is used to study the relationship between glass structure and tensile behavior across a wide range of structural states. Starting with the as-molded state of the glass, ion fluence and irradiated volume fraction are systematically varied to rejuvenate the glass, and the resulting plastic behavior of the metallic glass nanowires probed by in situ mechanical testing in a scanning electron microscope. Whereas the as-molded nanowires exhibit high strength, brittle-like fracture and negligible inelastic deformation, ion-irradiated nanowires show tensile ductility and quasi-homogeneous plastic deformation. Signatures of changes to the glass structure owing to ion irradiation as obtained from electron diffraction are subtle, despite relatively large yield strength reductions of hundreds of megapascals relative to the as-molded condition. To reconcile changes in mechanical behavior with glass properties, we adapt previous models equating the released strain energy during shear banding to a transit through the glass transition temperature by incorporating the excess enthalpy associated with distinct structural states. Our model suggests that ion irradiation increases the fictive temperature of our glass by tens of degrees – the equivalent of many orders of magnitude change in cooling rate. We further show our analytical description of yield strength to quantitatively describe literature results showing a correlation between severe plastic deformation and hardness in a single glass system. Our results highlight not only the capacity for room temperature ductile plastic flow in nanoscaled metallic glasses, but also processing strategies capable of glass rejuvenation outside of the realm of traditional thermal treatments

  1. Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

    2017-01-01

    In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

  2. Microstructural evolution of nanochannel CrN films under ion irradiation at elevated temperature and post-irradiation annealing

    Science.gov (United States)

    Tang, Jun; Hong, Mengqing; Wang, Yongqiang; Qin, Wenjing; Ren, Feng; Dong, Lan; Wang, Hui; Hu, Lulu; Cai, Guangxu; Jiang, Changzhong

    2018-03-01

    High-performance radiation tolerance materials are crucial for the success of future advanced nuclear reactors. In this paper, we present a further investigation that the "vein-like" nanochannel films can enhance radiation tolerance under ion irradiation at high temperature and post-irradiation annealing. The chromium nitride (CrN) nanochannel films with different nanochannel densities and the compact CrN film are chosen as a model system for these studies. Microstructural evolution of these films were investigated using Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Elastic Recoil Detection (ERD) and Grazing Incidence X-ray Diffraction (GIXRD). Under the high fluence He+ ion irradiation at 500 °C, small He bubbles with low bubble densities are observed in the irradiated nanochannel CrN films, while the aligned large He bubbles, blistering and texture reconstruction are found in the irradiated compact CrN film. For the heavy Ar2+ ion irradiation at 500 °C, the microstructure of the nanochannel CrN RT film is more stable than that of the compact CrN film due to the effective releasing of defects via the nanochannel structure. Under the He+ ion irradiation and subsequent annealing, compared with the compact film, the nanochannel films have excellent performance for the suppression of He bubble growth and possess the strong microstructural stability. Basing on the analysis on the sizes and number densities of bubbles as well as the concentrations of He retained in the nanochannel CrN films and the compact CrN film under different experimental conditions, potential mechanism for the enhanced radiation tolerance are discussed. Nanochannels play a crucial role on the release of He/defects under ion irradiation. We conclude that the tailored "vein-like" nanochannel structure may be used as advanced radiation tolerance materials for future nuclear reactors.

  3. High photocarrier mobility in ultrafast ion-irradiated In.sub.0.53./sub.Ga.sub.0.47./sub.As

    Czech Academy of Sciences Publication Activity Database

    Delagnes, J.C.; Mounaix, P.; Němec, Hynek; Fekete, Ladislav; Kadlec, Filip; Kužel, Petr; Martin, M.; Mangeney, J.

    2009-01-01

    Roč. 42, č. 19 (2009), 195103/1-195103/6 ISSN 0022-3727 R&D Projects: GA ČR(CZ) GP202/09/P099; GA AV ČR(CZ) IAA100100902 Institutional research plan: CEZ:AV0Z10100520 Keywords : InGaAs * photocarrier mobility * ultrafast photoconductivity terahertz * ion irradiation * terahertz * ion irradiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.083, year: 2009

  4. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Science.gov (United States)

    Jadhav, Vidya

    2015-09-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0> orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 1017 cm-3 were irradiated at 100 MeV Fe7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 1010-1 × 1014 ions cm-2. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet-visible-NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 1013, 5 × 1013 and 1 × 1014 ions cm-2, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 1013 ion cm-2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E1, E1 + Δ and E2 band gaps in all irradiated samples.

  5. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    International Nuclear Information System (INIS)

    Jadhav, Vidya

    2015-01-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10 17 cm −3 were irradiated at 100 MeV Fe 7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10 10 –1 × 10 14 ions cm −2 . The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10 13 , 5 × 10 13 and 1 × 10 14 ions cm −2 , we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10 13 ion cm −2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E 1 , E 1 + Δ and E 2 band gaps in all irradiated samples

  6. High fluence effects on ion implantation stopping and range

    International Nuclear Information System (INIS)

    Selvi, S.; Tek, Z.; Oeztarhan, A.; Akbas, N.; Brown, I.G.

    2005-01-01

    We have developed a code STOPPO which can be used to modify the more-widely used ion implantation codes to more accurately predict the mean nuclear and electronic stopping power, preferential sputtering and range of heavy ions in monatomic target materials. In our simulations an effective atomic number and effective atomic mass are introduced into conveniently available analytical stopping cross-sections and a better fitting function for preferential sputtering yield is carefully evaluated for each ion implantation. The accuracy of the code confirmed experimentally by comparison with measured Rutherford backscattering spectrometry (RBS) concentration profiles for 130 keV Zr ions implanted into Be to fluences of 1 x 10 17 , 2 x 10 17 and 4 x 10 17 ions/cm 2 . We find a steady increase in the mean nuclear and electronic stopping powers of the target; the increase in nuclear stopping power is much greater than the increase in electronic stopping power

  7. Empirical assessment of the detection efficiency of CR-39 at high proton fluence and a compact, proton detector for high-fluence applications

    Energy Technology Data Exchange (ETDEWEB)

    Rosenberg, M. J., E-mail: mrosenbe@mit.edu; Séguin, F. H.; Waugh, C. J.; Rinderknecht, H. G.; Orozco, D.; Frenje, J. A.; Johnson, M. Gatu; Sio, H.; Zylstra, A. B.; Sinenian, N.; Li, C. K.; Petrasso, R. D. [Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Glebov, V. Yu.; Stoeckl, C.; Hohenberger, M.; Sangster, T. C. [Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623 (United States); LePape, S.; Mackinnon, A. J.; Bionta, R. M.; Landen, O. L. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); and others

    2014-04-15

    CR-39 solid-state nuclear track detectors are widely used in physics and in many inertial confinement fusion (ICF) experiments, and under ideal conditions these detectors have 100% detection efficiency for ∼0.5–8 MeV protons. When the fluence of incident particles becomes too high, overlap of particle tracks leads to under-counting at typical processing conditions (5 h etch in 6N NaOH at 80 °C). Short etch times required to avoid overlap can cause under-counting as well, as tracks are not fully developed. Experiments have determined the minimum etch times for 100% detection of 1.7–4.3-MeV protons and established that for 2.4-MeV protons, relevant for detection of DD protons, the maximum fluence that can be detected using normal processing techniques is ≲3 × 10{sup 6} cm{sup −2}. A CR-39-based proton detector has been developed to mitigate issues related to high particle fluences on ICF facilities. Using a pinhole and scattering foil several mm in front of the CR-39, proton fluences at the CR-39 are reduced by more than a factor of ∼50, increasing the operating yield upper limit by a comparable amount.

  8. Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Byung Du [School of Electrical and Electronic Engineering, 50, Yonsei University, Seoul 120-749 (Korea, Republic of); Park, Jin-Seong [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, K. B., E-mail: kbchung@dongguk.edu [Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2014-10-20

    Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of device performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.

  9. CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation

    International Nuclear Information System (INIS)

    Lim, C. W.; Greene, J. E.; Petrov, I.

    2006-01-01

    CoSi 2 layers, CoSi 2 (parallel sign)(001) Si and [100] CoSi 2 (parallel sign)[100] Si , contain fourfold symmetric (111) twinned domains oriented such that (221) CoSi 2 (parallel sign)(001) Si and CoSi 2 (parallel sign)[110] Si . We demonstrate that high-flux low-energy (E Ar + =9.6 eV) Ar + ion irradiation during deposition dramatically increases the area fraction f u of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio J Ar + /J Co of the incident Ar + to Co fluxes is 1.4 to 0.72 with J Ar + /J Co =13.3. TEM analyses show that the early stages of RDE CoSi 2 (001) film growth proceed via the Volmer-Weber mode with independent nucleation of both untwinned and twinned islands. Increasing J Ar + /J Co results in larger values of both the number density and area of untwinned with respect to twinned islands. The intense Ar + ion bombardment creates additional low-energy adsorption sites that favor the nucleation of untwinned islands while collisionally enhancing Co surface mobilities which, in turn, increases the probability of itinerant Co adatoms reaching these sites

  10. Spectroscopic characterization of ion-irradiated multi-layer graphenes

    Energy Technology Data Exchange (ETDEWEB)

    Tsukagoshi, Akira [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Honda, Shin-ichi, E-mail: s-honda@eng.u-hyogo.ac.jp [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Osugi, Ryo [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Okada, Hiraku [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); Niibe, Masahito [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); Terasawa, Mititaka [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Hirase, Ryuji; Izumi, Hirokazu; Yoshioka, Hideki [Hyogo Prefectural Institute of Technology, Kobe 654-0037 (Japan); Niwase, Keisuke [Hyogo University of Teacher Education, Kato, Hyogo 673-1494 (Japan); Taguchi, Eiji [Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047 (Japan); Lee, Kuei-Yi [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Oura, Masaki [RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan)

    2013-11-15

    Low-energy Ar ions (0.5–2 keV) were irradiated to multi-layer graphenes and the damage process, the local electronic states, and the degree of alignment of the basal plane, and the oxidation process upon ion irradiation were investigated by Raman spectroscopy, soft X-ray absorption spectroscopy (XAS) and in situ X-ray photoelectron spectroscopy (XPS). By Raman spectroscopy, we observed two stages similar to the case of irradiated graphite, which should relate to the accumulations of vacancies and turbulence of the basal plane, respectively. XAS analysis indicated that the number of sp{sup 2}-hybridized carbon (sp{sup 2}-C) atoms decreased after ion irradiation. Angle-resolved XAS revealed that the orientation parameter (OP) decreased with increasing ion energy and fluence, reflecting the turbulence of the basal plane under irradiation. In situ XPS shows the oxidation of the irradiated multi-layer graphenes after air exposure.

  11. Optical properties tailoring by high fluence implantation of Ag ions on sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Silva, R.C. da; Wemans, A.; Maneira, M.J.P.; Kozanecki, A.; Alves, E.

    2006-01-01

    Optical and structural properties of single crystalline α-Al 2 O 3 were changed by the implantation of high fluences of Ag ions. Colourless transparent (101-bar 0) sapphire samples were implanted at room temperature with 160keV silver ions and fluences up to 1x10 17 Agcm -2 . Surface amorphization is observed at the fluence of 6x10 16 Agcm -2 . Except for the lower fluences (below 6x10 16 Agcm -2 ) the optical absorption spectra reveal the presence of a band peaking in the region 450-500nm, depending on the retained fluence. This band has been attributed to the presence of silver colloids, being thus 1x10 16 Agcm -2 below the threshold for colloid formation during the implantation. Annealing in oxidizing atmosphere promotes the recrystallization along with segregation of Ag followed by loss through evaporation. Recrystallization is retarded for annealing in reducing atmosphere and the Ag profile displays now a double peak structure after evaporation. Playing with the implantation fluence, temperature and annealing atmosphere controllable shifts of the position and intensity of the optical bands in the visible were achieved

  12. High-energy and high-fluence proton irradiation effects in silicon solar cells

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Taylor, S.J.; Yang, M.; Matsuda, S.; Kawasaki, O.; Hisamatsu, T.

    1996-01-01

    We have examined proton irradiation damage in high-energy (1 endash 10 MeV) and high-fluence (approx-gt 10 13 cm -2 ) Si n + -p-p + structure space solar cells. Radiation testing has revealed an anomalous increase in short-circuit current I sc followed by an abrupt decrease and cell failure, induced by high-fluence proton irradiation. We propose a model to explain these phenomena by expressing the change in carrier concentration p of the base region as a function of the proton fluence in addition to the well-known model where the short-circuit current is decreased by minority-carrier lifetime reduction after irradiation. The reduction in carrier concentration due to majority-carrier trapping by radiation-induced defects has two effects. First, broadening of the depletion layer increases both the generation endash recombination current and also the contribution of the photocurrent generated in this region to the total photocurrent. Second, the resistivity of the base layer is increased, resulting in the abrupt decrease in the short circuit current and failure of the solar cells. copyright 1996 American Institute of Physics

  13. Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations

    International Nuclear Information System (INIS)

    D'Orleans, C.

    2003-07-01

    This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co + ions have been implanted at 160 keV at fluences of 2.10 16 , 5.10 16 and 10 17 at/cm 2 , and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10 16 Co + /cm 2 at 77 K, to 9.7 nm at 10 17 Co + /cm 2 at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

  14. Ion irradiation effects in structural and magnetic properties of Co/Cu multilayers

    International Nuclear Information System (INIS)

    Sakamoto, Isao; Okazaki, Satoshi; Koike, Masaki; Honda, Shigeo

    2012-01-01

    400 keV Ar ion (the Ar ion) and 50 keV He ion (the He ion) irradiations were performed in order to elucidate roles of Co/Cu interfacial structures in physical origins of giant magnetoresistance (GMR) in the [Co (2 nm)/Cu (2 nm)] 30 multilayers (MLs). The magnetoresistance (MR) ratio after the Ar ion irradiation decreases abruptly with increasing Ar ion fluence. On the other hand, the MR ratio after the He ion irradiation decreases slowly with increasing He ion fluence. The Ar ion irradiation induces the decrease in the difference (R max − R sat ) between the maximum resistance (R max ) and the saturated resistance (R sat ) under in-plane magnetic field and the increase in the R sat , although the effect of the He ion irradiation is not remarkable. The decrease in the (R max − R sat ) rather than the increase in the R sat seems to be effective for the decrease in the MR ratios after the Ar ion and the He ion irradiation. The increase in the R sat implies the mixing of Co atoms in Cu layers. The antiferromagnetic coupling fraction (AFF) estimated from the magnetization curves after the Ar ion and the He ion irradiation shows the similar behavior with the MR ratio as a function of ion fluence. Therefore, although the degrees of the irradiation effects by the Ar ion and the He ions are different, we suggest the relation between the GMR and the AFF affected by the ion-induced interfacial structures accompanied with the atomic mixing in the interfacial region.

  15. Positive ion irradiation facility

    International Nuclear Information System (INIS)

    Braby, L.A.

    1985-01-01

    Many questions about the mechanisms of the response of cells to ionizing radiation can best be investigated using monoenergetic heavy charged particle beams. Questions of the role of different types of damage in the LET effect, for example, are being answered by comparing repair kinetics for damage induced by electrons with that produced by helium ions. However, as the models become more sophicated, the differences between models can be detected only with more precise measurements, or by combining high- and low-LET irradiations in split-dose experiments. The design of the authors present cell irradiation beam line has limited the authors to irradiating cells in a partial vacuum. A new way to mount the dishes and bring the beam to the cells was required. Several means of irradiating cells in mylar-bottom dishes have been used at other laboratories. For example at the RARAF Facility, the dual ion experiments are done with the dish bottom serving as the beam exit window but the cells are in a partial vacuum to prevent breaking the window. These researchers have chosen instead to use the dish bottom as the beam window and to irradiate the entire dish in a single exposure. A special, very fast pumping system will be installed at the end of the beam line. This system will make it possible to irradiate cells within two minutes of installing them in the irradiation chamber. In this way, the interaction of electron and ion-induced damage in Chlamydomonas can be studied with time between doses as short as 5 minutes

  16. Temperature Dependent Surface Modification of Tungsten Exposed to High-Flux Low-Energy Helium Ion Irradiation

    OpenAIRE

    Damico, Antony Q; Tripathi, Jitendra K; Novakowski, Theodore J; Miloshevsky, Gennady; Hassanein, Ahmed

    2016-01-01

    Nuclear fusion is a great potential energy source that can provide a relatively safe and clean limitless supply of energy using hydrogen isotopes as fuel material. ITER (international thermonuclear experimental reactor) is the world first fusion reactor currently being built in France. Tungsten (W) is a prime candidate material as plasma facing component (PFC) due to its excellent mechanical properties, high melting point, and low erosion rate. However, W undergoes a severe surface morphology...

  17. Structural investigations of amorphised iron and nickel by high-fluence metalloid ion implantation

    International Nuclear Information System (INIS)

    Rauschenbach, B.; Otto, G.; Hohmuth, K.; Heera, V.

    1987-01-01

    Boron, phosphorus and arsenic ions have been implanted into evaporated iron and nickel thin films at room temperature, and the implantation-induced microstructure has been investigated by high-voltage electron microscopy and transmission high energy electron diffraction. The metal films were implanted with ions to a constant dose of 1 x 10 17 and 5 x 10 17 ions/cm 2 respectively at energy of 50 keV. An amorphous layer was produced by boron and phosphorus ion implantation. Information on the atomic structure of the amorphous layers was obtained from the elastically diffracted electron intensity. On the basis of the correct scattering curves, the total interference function and the pair correlation function were determined. Finally, the atomic arrangement of the implantation-induced amorphous layers is discussed and structure produced by ion irradiation is compared with amorphous structures formed with other techniques. (author)

  18. Heavy-ion irradiation induced diamond formation in carbonaceous materials

    International Nuclear Information System (INIS)

    Daulton, T. L.

    1999-01-01

    The basic mechanisms of metastable phase formation produced under highly non-equilibrium thermodynamic conditions within high-energy particle tracks are investigated. In particular, the possible formation of diamond by heavy-ion irradiation of graphite at ambient temperature is examined. This work was motivated, in part, by earlier studies which discovered nanometer-grain polycrystalline diamond aggregates of submicron-size in uranium-rich carbonaceous mineral assemblages of Precambrian age. It was proposed that the radioactive decay of uranium formed diamond in the fission particle tracks produced in the carbonaceous minerals. To test the hypothesis that nanodiamonds can form by ion irradiation, fine-grain polycrystalline graphite sheets were irradiated with 400 MeV Kr ions. The ion irradiated graphite (and unirradiated graphite control) were then subjected to acid dissolution treatments to remove the graphite and isolate any diamonds that were produced. The acid residues were then characterized by analytical and high-resolution transmission electron microscopy. The acid residues of the ion-irradiated graphite were found to contain ppm concentrations of nanodiamonds, suggesting that ion irradiation of bulk graphite at ambient temperature can produce diamond

  19. Effect of heavy ion irradiation on C 60

    Science.gov (United States)

    Lotha, S.; Ingale, A.; Avasthi, D. K.; Mittal, V. K.; Mishra, S.; Rustagi, K. C.; Gupta, A.; Kulkarni, V. N.; Khathing, D. T.

    1999-06-01

    Thin films of C 60 were subjected to swift heavy ion irradiation spanning the region from 2 to 11 keV/nm of electronic excitation. Studies of the irradiated films by Raman spectroscopy indicated polymerization and damage of the film with an ion fluence. The ion track radii are estimated for various ions using the Raman data. Photoluminescence spectroscopy of the irradiated film indicated a decrease in the C 60 phase with a dose, and an increase in the intensity at the 590 nm wavelength, which is attributed to an increase in the oxygen content.

  20. Development of nano-structure controlled polymer electrolyte fuel-cell membranes by high-energy heavy ion irradiation

    International Nuclear Information System (INIS)

    Yamaki, Tetsuya; Asano, Masaharu; Maekawa, Yasunari; Yoshida, Masaru; Kobayashi, Misaki; Nomura, Kumiko; Takagi, Shigeharu

    2008-01-01

    There is increasing interest in polymer electrolyte fuel cells (PEFCs) together with recent worldwide energy demand and environmental issues. In order to develop proton-conductive membranes for PEFCs, we have been using high-energy heavy ion beams from the cyclotron accelerator of Takasaki Ion Accelerators for Advanced Radiation Application (TIARA), JAEA. Our strategic focus is centered on using nano-scale controllability of the ion-beam processing; the membrane preparation involves (1) the irradiation of commercially-available base polymer films with MeV ions, (2) graft polymerization of vinyl monomers into electronically-excited parts along the ion trajectory, called latent tracks, and (3) sulfonation of the graft polymers. Interestingly, the resulting membranes exhibited anisotropic proton transport, i.e., higher conductivity in the thickness direction. According to microscopic observations, this is probably because the columnar electrolyte phase extended, with a width of tens-to-hundreds nanometers, through the membrane. Other excellent membrane properties, e.g., sufficient mechanical strength, high dimensional stability, and low gas permeability should be due to such a controlled structure. (author)

  1. Study on yeast mutant with high alcohol yield fermented in sweet sorghum juice using carbon ion irradiation

    International Nuclear Information System (INIS)

    Yan Yaping; Lu Dong; Wang Jufang; Dong Xicun; Gao Feng; Ma Liang; Li Wenjian

    2009-01-01

    Five mutants with high ability of producing alcohol were selected out by using TTC as an indicator after irradiation of the alcohol yeast with 100 MeV/u carbon ions. The fermentation experiment in sweet sorghum juice showed that the alcohol production ability of mutant T4 strain increased 18.6% compared to the control strain. The residual sugar content in the juice was decreased too. After that,the optimum fermentation conditions of the T4 strain in sweet sorghum juice were investigated. The results showed that the optimum temperature and pH value for fermentation were 30 degree C and 4.5, respectively. The verification experiment was fermented in a 10 l bio-reactor and the obtained data indicated that the fermentative rate and the ability of producing alcohol in T4 strain was higher than that in the control strain under the same fermentation condition. (authors)

  2. Low-intensity red and infrared laser effects at high fluences on Escherichia coli cultures

    Energy Technology Data Exchange (ETDEWEB)

    Barboza, L.L.; Campos, V.M.A.; Magalhaes, L.A.G. [Instituto de Biologia Roberto Alcantara Gomes, Rio de Janeiro, RJ (Brazil). Departamento de Biofisica e Biometria; Paoli, F. [Universidade Federal de Juiz de Fora (UFJF), Juiz de Fora, MG (Brazil). Departamento de Morfologia; Fonseca, A.S., E-mail: adnfonseca@ig.com.br [Universidade Federal do Estado do Rio de Janeiro (UFRJ), Rio de Janeiro, RJ (Brazil). Departamento de Ciencias Fisiologicas

    2015-10-15

    Semiconductor laser devices are readily available and practical radiation sources providing wavelength tenability and high monochromaticity. Low-intensity red and near-infrared lasers are considered safe for use in clinical applications. However, adverse effects can occur via free radical generation, and the biological effects of these lasers from unusually high fluences or high doses have not yet been evaluated. Here, we evaluated the survival, filamentation induction and morphology of Escherichia coli cells deficient in repair of oxidative DNA lesions when exposed to low-intensity red and infrared lasers at unusually high fluences. Cultures of wild-type (AB1157), endonuclease III-deficient (JW1625-1), and endonuclease IV-deficient (JW2146-1) E. coli, in exponential and stationary growth phases, were exposed to red and infrared lasers (0, 250, 500, and 1000 J/cm{sup 2}) to evaluate their survival rates, filamentation phenotype induction and cell morphologies. The results showed that low-intensity red and infrared lasers at high fluences are lethal, induce a filamentation phenotype, and alter the morphology of the E. coli cells. Low-intensity red and infrared lasers have potential to induce adverse effects on cells, whether used at unusually high fluences, or at high doses. Hence, there is a need to reinforce the importance of accurate dosimetry in therapeutic protocols. (author)

  3. Plasma instability control toward high fluence, high energy x-ray continuum source

    Science.gov (United States)

    Poole, Patrick; Kirkwood, Robert; Wilks, Scott; Blue, Brent

    2017-10-01

    X-ray source development at Omega and NIF seeks to produce powerful radiation with high conversion efficiency for material effects studies in extreme fluence environments. While current K-shell emission sources can achieve tens of kJ on NIF up to 22 keV, the conversion efficiency drops rapidly for higher Z K-alpha energies. Pulsed power devices are efficient generators of MeV bremsstrahlung x-rays but are unable to produce lower energy photons in isolation, and so a capability gap exists for high fluence x-rays in the 30 - 100 keV range. A continuum source under development utilizes instabilities like Stimulated Raman Scattering (SRS) to generate plasma waves that accelerate electrons into high-Z converter walls. Optimizing instabilities using existing knowledge on their elimination will allow sufficiently hot and high yield electron distributions to create a superior bremsstrahlung x-ray source. An Omega experiment has been performed to investigate the optimization of SRS and high energy x-rays using Au hohlraums with parylene inner lining and foam fills, producing 10× greater x-ray yield at 50 keV than conventional direct drive experiments on the facility. Experiment and simulation details on this campaign will be presented. This work was performed under the auspices of the US DoE by LLNL under Contract No. DE-AC52-07NA27344.

  4. Reorientation of the crystalline planes in confined single crystal nickel nanorods induced by heavy ion irradiation

    International Nuclear Information System (INIS)

    Misra, Abha; Tyagi, Pawan K.; Rai, Padmnabh; Misra, D. S.; Ghatak, Jay; Satyam, P. V.; Avasthi, D. K.

    2006-01-01

    In a recent letter Tyagi et al. [Appl. Phys. Lett. 86, 253110 (2005)] have reported the special orientation of nickel planes inside multiwalled carbon nanotubes (MWCNTs) with respect to the tube axis. Heavy ion irradiation has been performed with 1.5 MeV Au 2+ and 100 MeV Au 7+ ions on these nickel filled MWCNTs at fluences ranging from 10 12 to 10 15 ions/cm 2 at room temperature. Ion-induced modifications have been studied using high-resolution transmission electron microscopy. The diffraction pattern and the lattice imaging showed the presence of ion-induced planar defects on the tube walls and completely amorphized encapsulated nickel nanorods. The results are discussed in terms of thermal spike model

  5. Setup for in situ x-ray diffraction study of swift heavy ion irradiated materials.

    Science.gov (United States)

    Kulriya, P K; Singh, F; Tripathi, A; Ahuja, R; Kothari, A; Dutt, R N; Mishra, Y K; Kumar, Amit; Avasthi, D K

    2007-11-01

    An in situ x-ray diffraction (XRD) setup is designed and installed in the materials science beam line of the Pelletron accelerator at the Inter-University Accelerator Centre for in situ studies of phase change in swift heavy ion irradiated materials. A high vacuum chamber with suitable windows for incident and diffracted X-rays is integrated with the goniometer and the beamline. Indigenously made liquid nitrogen (LN2) temperature sample cooling unit is installed. The snapshots of growth of particles with fluence of 90 MeV Ni ions were recorded using in situ XRD experiment, illustrating the potential of this in situ facility. A thin film of C60 was used to test the sample cooling unit. It shows that the phase of the C60 film transforms from a cubic lattice (at room temperature) to a fcc lattice at around T=255 K.

  6. Setup for in situ x-ray diffraction study of swift heavy ion irradiated materials

    Science.gov (United States)

    Kulriya, P. K.; Singh, F.; Tripathi, A.; Ahuja, R.; Kothari, A.; Dutt, R. N.; Mishra, Y. K.; Kumar, Amit; Avasthi, D. K.

    2007-11-01

    An in situ x-ray diffraction (XRD) setup is designed and installed in the materials science beam line of the Pelletron accelerator at the Inter-University Accelerator Centre for in situ studies of phase change in swift heavy ion irradiated materials. A high vacuum chamber with suitable windows for incident and diffracted X-rays is integrated with the goniometer and the beamline. Indigenously made liquid nitrogen (LN2) temperature sample cooling unit is installed. The snapshots of growth of particles with fluence of 90MeV Ni ions were recorded using in situ XRD experiment, illustrating the potential of this in situ facility. A thin film of C60 was used to test the sample cooling unit. It shows that the phase of the C60 film transforms from a cubic lattice (at room temperature) to a fcc lattice at around T =255K.

  7. Effect of ion irradiation on nanoscale TiS2 systems with suppressed Titania phase

    International Nuclear Information System (INIS)

    Hazarika, Saurabh J; Mohanta, Dambarudhar; Tripathi, A; Kanjilal, D.

    2016-01-01

    Titanium disulfide (TiS 2 ), being an important of the transition metal dichalcogenide, (TMDC) family, has drawn numerous interest owing to exhibition of tunable band gap as well as high carrier mobility. In this work, we highlight preparation of TiS 2 nanopowder with minimal TiO 2 content and also demonstrate modified properties upon swift heavy ion irradiation on TiS 2 nanoparticles dispersed PVA films. Different properties of the irradiated samples have been characterized through diffraction, microscopic and spectroscopic techniques. As a result of irradiation, due to agglomeration of particles, the grain size is found to increase. We could also observe a red shift after irradiation with increasing fluence, leading to easy flow of electron from valence to conduction band, which shows that conduction of electrons is more in case of irradiated films compared to the pristine one and thus there may be a possibility of using the irradiated samples in various optoelectronic devices. (paper)

  8. High flux-fluence measurements in fast reactors

    International Nuclear Information System (INIS)

    Lippincott, E.P.; Ulseth, J.A.

    1977-01-01

    Characterization of irradiation environments for fuels and materials tests in fast reactors requires determination of the neutron flux integrated over times as long as several years. An accurate integration requires, therefore, passive dosimetry monitors with long half-life or stable products which can be conveniently measured. In addition, burn-up, burn-in, and burn-out effects must be considered in high flux situations and use of minimum quantities of dosimeter materials is often desirable. These conditions force the use of dosimeter and dosimeter container designs, measured products, and techniques that are different from those that are used in critical facilities and other well-characterized benchmark fields. Recent measurements in EBR-II indicate that high-accuracy results can be attained and that tie-backs to benchmark field technique calibrations can be accomplished

  9. Study of a High-Yield Cellulase System Created by Heavy-Ion Irradiation-Induced Mutagenesis of Aspergillus niger and Mixed Fermentation with Trichoderma reesei

    Science.gov (United States)

    Chen, Ji-Hong; Li, Wen-Jian; Liu, Jing; Hu, Wei; Xiao, Guo-Qing; Dong, Miao-Yin; Wang, Yu-Chen

    2015-01-01

    The aim of this study was to evaluate and validate the efficiency of 12C6+ irradiation of Aspergillus niger (A. niger) or mutagenesis via mixed Trichoderma viride (T. viride) culturing as well as a liquid cultivation method for cellulase production via mixed Trichoderma reesei (T. reesei) and A. niger culture fermentation. The first mutagenesis approach was employed to optimize yield from a cellulase-producing strain via heavy-ion mutagenesis and high-throughput screening, and the second was to effectively achieve enzymatic hydrolysis of cellulase from a mixed culture of mutant T. viride and A. niger. We found that 12C6+-ion irradiation induced changes in cellulase biosynthesis in A. niger but had no effect on the time course of the synthesis. It is notable that the exoglucanases (CBH) activities of A. niger strains H11-1 and H differed (6.71 U/mL vs. 6.01 U/mL) and were significantly higher than that of A. niger mutant H3-1. Compared with strain H, the filter paper assay (FPA), endoglucanase (EG) and β-glucosidase (BGL) activities of mutant strain H11-1 were increased by 250.26%, 30.26% and 34.91%, respectively. A mixed culture system was successfully optimized, and the best ratio of T. reesei to A. niger was 5:1 for 96 h with simultaneous inoculation. The BGL activity of the mixed culture increased after 72 h. At 96 h, the FPA and BGL activities of the mixed culture were 689.00 and 797.15 U/mL, respectively, significantly higher than those of monocultures, which were 408.70 and 646.98 U/mL for T. reesei and 447.29 and 658.89 U/mL for A. niger, respectively. The EG activity of the mixed culture was 2342.81 U/mL, a value that was significantly higher than that of monocultures at 2206.57 U/mL for T. reesei and 1727.62 U/mL for A. niger. In summary, cellulose production and hydrolysis yields were significantly enhanced by the proposed combination scheme. PMID:26656155

  10. Study of a High-Yield Cellulase System Created by Heavy-Ion Irradiation-Induced Mutagenesis of Aspergillus niger and Mixed Fermentation with Trichoderma reesei.

    Directory of Open Access Journals (Sweden)

    Shu-Yang Wang

    Full Text Available The aim of this study was to evaluate and validate the efficiency of 12C6+ irradiation of Aspergillus niger (A. niger or mutagenesis via mixed Trichoderma viride (T. viride culturing as well as a liquid cultivation method for cellulase production via mixed Trichoderma reesei (T. reesei and A. niger culture fermentation. The first mutagenesis approach was employed to optimize yield from a cellulase-producing strain via heavy-ion mutagenesis and high-throughput screening, and the second was to effectively achieve enzymatic hydrolysis of cellulase from a mixed culture of mutant T. viride and A. niger. We found that 12C6+-ion irradiation induced changes in cellulase biosynthesis in A. niger but had no effect on the time course of the synthesis. It is notable that the exoglucanases (CBH activities of A. niger strains H11-1 and H differed (6.71 U/mL vs. 6.01 U/mL and were significantly higher than that of A. niger mutant H3-1. Compared with strain H, the filter paper assay (FPA, endoglucanase (EG and β-glucosidase (BGL activities of mutant strain H11-1 were increased by 250.26%, 30.26% and 34.91%, respectively. A mixed culture system was successfully optimized, and the best ratio of T. reesei to A. niger was 5:1 for 96 h with simultaneous inoculation. The BGL activity of the mixed culture increased after 72 h. At 96 h, the FPA and BGL activities of the mixed culture were 689.00 and 797.15 U/mL, respectively, significantly higher than those of monocultures, which were 408.70 and 646.98 U/mL for T. reesei and 447.29 and 658.89 U/mL for A. niger, respectively. The EG activity of the mixed culture was 2342.81 U/mL, a value that was significantly higher than that of monocultures at 2206.57 U/mL for T. reesei and 1727.62 U/mL for A. niger. In summary, cellulose production and hydrolysis yields were significantly enhanced by the proposed combination scheme.

  11. In situ studies of the kinetics of surface topography development during ion irradiation

    International Nuclear Information System (INIS)

    Levinskas, R.; Pranevicius, L.

    1996-01-01

    Studies of the mechanical properties of the materials affected by 25-200 keV H + , He + , Ne + and Ar + ion irradiation in the range of fluences up to 2 · 10 17 cm -2 based on the analysis of acoustic emission signals, kinetics of the surface deformations measured by laser interferometric technique and the variations of the surface acoustic waves propagation velocity are conducted. The acoustic emissions source mechanisms under various ion irradiation conditions are discussed and relative contribution various possible mechanism are indicated. The correlation of experimental results obtained by different methods of analysis is done. (author). 11 refs, 5 figs

  12. Helium ion irradiated polyamidoimide films: a FT-IR and Raman follow-up

    International Nuclear Information System (INIS)

    Merhari, L.; Belorgeot, C.; Quintard, P.

    1994-01-01

    The evolution of polyamidoimide (PAI) at a molecular level has been studied by infrared and Raman spectroscopy after several He + ion irradiations. The infrared investigation made it possible to study the appearance of CO 2 and HCN molecules and, for example, to correlate CO 2 with C-O vanishing bands during He + ion irradiation. Preliminary Raman spectroscopy results confirmed a graphite-like structure for strongly irradiated PAI. In situ spectroscopic measurements versus fluence during irradiation with other ions are expected to give further information about the polymer structure evolution. (6 figures, 10 references) (UK)

  13. Characterization of saturation of CR-39 detector at high alpha-particle fluence

    Directory of Open Access Journals (Sweden)

    M. El Ghazaly

    2018-04-01

    Full Text Available The occurrence of saturation in the CR-39 detector reduces and limits its detection dynamic range; nevertheless, this range could be extended using spectroscopic techniques and by measuring the net bulk rate of the saturated CR-39 detector surface. CR-39 detectors were irradiated by 1.5 MeV high alpha-particle fluence varying from 0.06 × 108 to 7.36 × 108 alphas/cm2 from Am-241 source; thereafter, they were etched in a 6.25N NaOH solution at a temperature of 70°C for different durations. Net bulk etch rate measurement of the 1.5 MeV alpha-irradiated CR-39 detector surface revealed that rate increases with increasing etching time and reaches its maximum value at the end of the alpha-particle range. It is also correlated with the alpha-particle fluence. The measurements of UV–Visible (UV–Vis absorbance at 500 and 600 nm reveal that the absorbance is linearly correlated with the fluence of alpha particles at the etching times of 2 and 4 hour. For extended etching times of 6, 10, and 14.5 hour, the absorbance is saturated for fluence values of 4.05 × 108, 5.30 × 108, and 7.36 × 108 alphas/cm2. These new methods pave the way to extend the dynamic range of polymer-based solid state nuclear track detectors (SSNTDs in measurement of high fluence of heavy ions as well as in radiation dosimetry. Keywords: Alpha Particle, Bulk Etch Rate, CR-39 Detector, Saturated Regime, UV–Vis Spectroscopy

  14. Large modification in insulator-metal transition of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001) by high energy ion irradiation in biased reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Azhan, Nurul Hanis; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Ohtsubo, Yoshiyuki; Kimura, Shin-ichi [Graduate School of Frontier Biosciences, Osaka University, Suita 565-0871 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont, 37200 Tours (France)

    2016-02-07

    High energy ion irradiation in biased reactive sputtering enabled significant modification of insulator-metal transition (IMT) properties of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001). Even at a high biasing voltage with mean ion energy of around 325 eV induced by the rf substrate biasing power of 40 W, VO{sub 2} film revealed low IMT temperature (T{sub IMT}) at 309 K (36 °C) together with nearly two orders magnitude of resistance change. Raman measurements from −193 °C evidenced that the monoclinic VO{sub 2} lattice begins to transform to rutile-tetragonal lattice near room temperature. Raman spectra showed the in-plane compressive stress in biased VO{sub 2} films, which results in shortening of V–V distance along a-axis of monoclinic structure, a{sub M}-axis (c{sub R}-axis) and thus lowering the T{sub IMT}. In respect to that matter, significant effects in shortening the in-plane axis were observed through transmission electron microscopy observations. V2p{sub 3/2} spectra from XPS measurements suggested that high energy ion irradiation also induced oxygen vacancies and resulted for an early transition onset and rather broader transition properties. Earlier band gap closing against the temperature in VO{sub 2} film with higher biasing power was also probed by ultraviolet photoelectron spectroscopy. Present results with significant modification of IMT behavior of films deposited at high-energy ion irradiation with T{sub IMT} near the room temperature could be a newly and effective approach to both exploring mechanisms of IMT and further applications of this material, due to the fixed deposition conditions and rather thicker VO{sub 2} films.

  15. Damage evolution in Xe-ion irradiated rutile (TiO2) single crystals

    International Nuclear Information System (INIS)

    Li, F.; Sickafus, K.E.; Evans, C.R.; Nastasi, M.

    1999-01-01

    Rutile (TiO 2 ) single crystals with (110) orientation were irradiated with 360 keV Xe 2+ ions at 300 K to fluences ranging from 2 x 10 19 to 1 x 10 20 Xe/m 2 . Irradiated samples were analyzed using: (1) Rutherford backscattering spectroscopy combined with ion channeling analysis (RBS/C); and (2) cross-sectional transmission electron microscopy (XTEM). Upon irradiation to a fluence of 2 x 10 19 Xe/m 2 , the sample thickness penetrated by the implanted ions was observed to consist of three distinct layers: (1) a defect-free layer at the surface (thickness about 12 nm) exhibiting good crystallinity; (2) a second layer with a low density of relatively large-sized defects; and (3) a third layer consisting of a high concentration of small defects. After the fluence was increased to 7 x 10 19 Xe/m 2 , a buried amorphous layer was visible by XTEM. The thickness of the amorphous layer was found to increase with increasing Xe ion fluence. The location of this buried amorphous layer was found to coincide with the measured peak in the Xe concentration (measured by RBS/C), rather than with the theoretical maximum in the displacement damage profile. This observation suggests the implanted Xe ions may serve as nucleation sites for the amorphization transformation. The total thickness of the damaged microstructure due to ion irradiation was always found to be much greater than the projected range of the Xe ions. This is likely due to point defect migration under the high stresses induced by ion implantation

  16. Experimental and Monte Carlo studies of fluence corrections for graphite calorimetry in low- and high-energy clinical proton beams

    International Nuclear Information System (INIS)

    Lourenço, Ana; Thomas, Russell; Bouchard, Hugo; Kacperek, Andrzej; Vondracek, Vladimir; Royle, Gary; Palmans, Hugo

    2016-01-01

    Purpose: The aim of this study was to determine fluence corrections necessary to convert absorbed dose to graphite, measured by graphite calorimetry, to absorbed dose to water. Fluence corrections were obtained from experiments and Monte Carlo simulations in low- and high-energy proton beams. Methods: Fluence corrections were calculated to account for the difference in fluence between water and graphite at equivalent depths. Measurements were performed with narrow proton beams. Plane-parallel-plate ionization chambers with a large collecting area compared to the beam diameter were used to intercept the whole beam. High- and low-energy proton beams were provided by a scanning and double scattering delivery system, respectively. A mathematical formalism was established to relate fluence corrections derived from Monte Carlo simulations, using the FLUKA code [A. Ferrari et al., “FLUKA: A multi-particle transport code,” in CERN 2005-10, INFN/TC 05/11, SLAC-R-773 (2005) and T. T. Böhlen et al., “The FLUKA Code: Developments and challenges for high energy and medical applications,” Nucl. Data Sheets 120, 211–214 (2014)], to partial fluence corrections measured experimentally. Results: A good agreement was found between the partial fluence corrections derived by Monte Carlo simulations and those determined experimentally. For a high-energy beam of 180 MeV, the fluence corrections from Monte Carlo simulations were found to increase from 0.99 to 1.04 with depth. In the case of a low-energy beam of 60 MeV, the magnitude of fluence corrections was approximately 0.99 at all depths when calculated in the sensitive area of the chamber used in the experiments. Fluence correction calculations were also performed for a larger area and found to increase from 0.99 at the surface to 1.01 at greater depths. Conclusions: Fluence corrections obtained experimentally are partial fluence corrections because they account for differences in the primary and part of the secondary

  17. Experimental and Monte Carlo studies of fluence corrections for graphite calorimetry in low- and high-energy clinical proton beams

    Energy Technology Data Exchange (ETDEWEB)

    Lourenço, Ana, E-mail: am.lourenco@ucl.ac.uk [Department of Medical Physics and Biomedical Engineering, University College London, London WC1E 6BT, United Kingdom and Division of Acoustics and Ionising Radiation, National Physical Laboratory, Teddington TW11 0LW (United Kingdom); Thomas, Russell; Bouchard, Hugo [Division of Acoustics and Ionising Radiation, National Physical Laboratory, Teddington TW11 0LW (United Kingdom); Kacperek, Andrzej [National Eye Proton Therapy Centre, Clatterbridge Cancer Centre, Wirral CH63 4JY (United Kingdom); Vondracek, Vladimir [Proton Therapy Center, Budinova 1a, Prague 8 CZ-180 00 (Czech Republic); Royle, Gary [Department of Medical Physics and Biomedical Engineering, University College London, London WC1E 6BT (United Kingdom); Palmans, Hugo [Division of Acoustics and Ionising Radiation, National Physical Laboratory, Teddington TW11 0LW, United Kingdom and Medical Physics Group, EBG MedAustron GmbH, A-2700 Wiener Neustadt (Austria)

    2016-07-15

    Purpose: The aim of this study was to determine fluence corrections necessary to convert absorbed dose to graphite, measured by graphite calorimetry, to absorbed dose to water. Fluence corrections were obtained from experiments and Monte Carlo simulations in low- and high-energy proton beams. Methods: Fluence corrections were calculated to account for the difference in fluence between water and graphite at equivalent depths. Measurements were performed with narrow proton beams. Plane-parallel-plate ionization chambers with a large collecting area compared to the beam diameter were used to intercept the whole beam. High- and low-energy proton beams were provided by a scanning and double scattering delivery system, respectively. A mathematical formalism was established to relate fluence corrections derived from Monte Carlo simulations, using the FLUKA code [A. Ferrari et al., “FLUKA: A multi-particle transport code,” in CERN 2005-10, INFN/TC 05/11, SLAC-R-773 (2005) and T. T. Böhlen et al., “The FLUKA Code: Developments and challenges for high energy and medical applications,” Nucl. Data Sheets 120, 211–214 (2014)], to partial fluence corrections measured experimentally. Results: A good agreement was found between the partial fluence corrections derived by Monte Carlo simulations and those determined experimentally. For a high-energy beam of 180 MeV, the fluence corrections from Monte Carlo simulations were found to increase from 0.99 to 1.04 with depth. In the case of a low-energy beam of 60 MeV, the magnitude of fluence corrections was approximately 0.99 at all depths when calculated in the sensitive area of the chamber used in the experiments. Fluence correction calculations were also performed for a larger area and found to increase from 0.99 at the surface to 1.01 at greater depths. Conclusions: Fluence corrections obtained experimentally are partial fluence corrections because they account for differences in the primary and part of the secondary

  18. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Energy Technology Data Exchange (ETDEWEB)

    Jadhav, Vidya, E-mail: vj1510@yahoo.com

    2015-09-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10{sup 17} cm{sup −3} were irradiated at 100 MeV Fe{sup 7+} ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10{sup 10}–1 × 10{sup 14} ions cm{sup −2}. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10{sup 13}, 5 × 10{sup 13} and 1 × 10{sup 14} ions cm{sup −2}, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10{sup 13} ion cm{sup −2} was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E{sub 1}, E{sub 1} + Δ and E{sub 2} band gaps in all irradiated samples.

  19. Evaluation of fluence to dose equivalent conversion factors for high energy radiations, (1)

    International Nuclear Information System (INIS)

    Sato, Osamu; Uehara, Takashi; Yoshizawa, Nobuaki; Iwai, Satoshi; Tanaka, Shun-ichi.

    1992-09-01

    Computer code system and basic data have been investigated for evaluating fluence to dose equivalent conversion factors for photons and neutrons up to 10 GeV. The present work suggested that the conversion factors would be obtained by incorporating effective quality factors of charged particles into the HERMES (High Energy Radiation Monte Carlo Elaborate System) code system. The effective quality factors for charged particles were calculated on the basis of the Q-L relationships specified in the ICRP Publication-60. (author)

  20. Effects of high thermal and high fast fluences on the mechanical properties of type 6061 aluminum in the HFBR

    International Nuclear Information System (INIS)

    Weeks, J.R.; Czajkowski, C.J.; Tichler, P.R.

    1988-01-01

    The High Flux Beam Reactor (HFBR) at Brookhaven National Laboratory (BNL) is an epithermal, externally moderated (by D 2 O) facility designed to produce neutron beams for research. Type 6061 T-6 aluminum was used for the beam tubes, pressure vessel, fuel cladding, and most other components in the high flux area. The HFBR has operated since 1965. The epithermal, external moderation of the HFBR means that materials irradiated in different areas of the facility receive widely different flux spectra. Thus, specimens from a control rod drive follower tube (CRDF) have received 1.5 /times/ 10 22 n/cm 2 (E > 0.1 MeV) and 3.2 /times/ 10 23 n/cm 2 thermal fluence, while those from a vertical thimble flow shroud received 1.9 /times/ 10 23 n/cm 2 (E > 0.1 MeV) and 1.0 /times/ 10 23 n/cm 2 thermal. These numbers correspond to fast to thermal fluence ratios ranging from 0.05 to 1.9. Irradiations are occurring at approximately 333/degree/K. The data indicate that the increase in tensile strength and decrease in ductility result primarily from the thermal fluence, i.e., the transmutation of aluminum to silicon. These effects appear to be saturating at fluences above approximately 1.8 /times/ 10 23 n/cm 2 thermal at values of 90,000 psi (6700 Kg/mm 2 ) and 9%, respectively. The specimens receiving the highest fluence ratios appear to have less increase in tensile strength and less decrease in ductility than specimens with a lower fast to thermal fluence ratio and the same thermal fluence, suggesting a possible beneficial effect of the high energy neutrons in preventing formation of silicon crystallites. 7 refs., 11 figs., 3 tabs

  1. Evolution of porous network in GaSb under normally incident 60 keV Ar{sup +}-ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Datta, D.P. [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Gautam Budh Nagar 203 207, Uttar Pradesh (India); Garg, S.K. [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India); Sahoo, P.K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751 005, Odisha (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Kanjilal, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha (India)

    2014-08-15

    Highlights: • We show the evolution of a nanoporous layer in GaSb under Ar{sup +}-ion bombardment at normal incidence in the hitherto unexplored high fluence regime, namely 7 × 10{sup 16}–3 × 10{sup 18} ions cm{sup −2}. • Fluence dependent formation and growth of patches on top of the nanoporous layer is demonstrated by scanning electron microscopy. • We also show high amount of oxidation of such ion-beam-generated nanoporous structures, with formation of Ga{sub 2}O{sub 3} and Sb{sub 2}O{sub 3}. • Our study reveals the presence of nanocrystallites within the porous layer even at the highest fluence used in the experiment. • We interpret the experimental observations through a qualitative model where we take into account the effect of re-deposition of atoms sputtered from the nanoporous layer during Ar{sup +}-ion irradiation of GaSb. - Abstract: GaSb(1 0 0) samples were irradiated with 60 keV Ar{sup +}-ions at normal incidence for fluences in the range of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} at room temperature, showing gradual evolution of a porous surface layer containing interconnected nanofibers. In particular, fluence dependent formation of patches on the nanoporous layer is observed by scanning electron microscopy. Combined results of grazing incidence x-ray diffraction and transmission electron microscopy reveal the presence of nanocrystallites in the porous structures. Compositional analysis by x-ray photoelectron spectroscopy indicates the development of oxide phases, mainly Ga{sub 2}O{sub 3} and Sb{sub 2}O{sub 3} where the former increases with fluence. We have proposed a model addressing a competition between ion-induced-defect driven growth of the nanoporous layer and redeposition of sputtered target atoms on the growing layer.

  2. Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

    Science.gov (United States)

    Kumar, Sunil; Kumar, Ashish; Tripathi, Ambuj; Tyagi, Chetna; Avasthi, D. K.

    2018-04-01

    In this work, swift heavy ion irradiation induced effects on the electrical properties of single layer graphene are reported. The modulation in minimum conductivity point in graphene with in-situ electrical measurement during ion irradiation was studied. It is found that the resistance of graphene layer decreases at lower fluences up to 3 × 1011 ions/cm2, which is accompanied by the five-fold increase in electron and hole mobilities. The ion irradiation induced increase in electron and hole mobilities at lower fluence up to 1 × 1011 ions/cm2 is verified by separate Hall measurements on another irradiated graphene sample at the selected fluence. In contrast to the adverse effects of irradiation on the electrical properties of materials, we have found improvement in electrical mobility after irradiation. The increment in mobility is explained by considering the defect annealing in graphene after irradiation at a lower fluence regime. The modification in carrier density after irradiation is also observed. Based on findings of the present work, we suggest ion beam irradiation as a useful tool for tuning of the electrical properties of graphene.

  3. Low energy helium ion irradiation induced nanostructure formation on tungsten surface

    International Nuclear Information System (INIS)

    Al-Ajlony, A.; Tripathi, J.K.; Hassanein, A.

    2017-01-01

    We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10 24 –1.6 × 10 25 ions m −2 ), and flux (2.0 × 10 20 –5.5 × 10 20 ion m −2 s −1 ). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

  4. Low energy helium ion irradiation induced nanostructure formation on tungsten surface

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ajlony, A., E-mail: montaserajlony@yahoo.com; Tripathi, J.K.; Hassanein, A.

    2017-05-15

    We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10{sup 24}–1.6 × 10{sup 25} ions m{sup −2}), and flux (2.0 × 10{sup 20}–5.5 × 10{sup 20} ion m{sup −2} s{sup −1}). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

  5. Effect of high fluence neutron irradiation on transport properties of thermoelectrics

    Science.gov (United States)

    Wang, H.; Leonard, K. J.

    2017-07-01

    Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This study is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 1018 n/cm2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, making the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300-400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. These results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.

  6. 160 MeV Ni12+ ion irradiation effects on the structural, optical and electrical properties of spherical polypyrrole nanoparticles

    International Nuclear Information System (INIS)

    Hazarika, J.; Kumar, A.

    2014-01-01

    Highlights: • Upon SHI irradiation the average diameters of PPy nanoparticles increases. • Crystallinity of PPy nanoparticles increases with increasing ion fluence. • IR active vibrational bands have different cross sections for SHI irradiation. • Upon SHI irradiation optical band gap energy of PPy nanoparticles decreases. • Upon SHI irradiation thermal stability of PPy nanoparticles increases. -- Abstract: In this study we report 160 MeV Ni 12+ swift heavy ion irradiation induced enhancement in the structural, optical and electrical properties of spherical polypyrrole (PPy) nanoparticles. High resolution transmission electron microscope results show that the pristine PPy nanoparticles have an average diameter of 11 nm while upon irradiation the average diameter increases to 18 nm at the highest ion fluence of 1 × 10 12 ions/cm 2 . X-ray diffraction studies show an enhancement of crystallinity and average crystallite size of PPy nanoparticles with increasing fluence. Studies of Fourier transform infrared spectra suggest the structural modifications of different functional groups upon irradiation. It also reveals that different functional groups have different sensitivity to irradiation. The infrared active N–H vibrational band at 3695 cm −1 is more sensitive to irradiation with a formation cross-section of 5.77 × 10 −13 cm 2 and effective radius of 4.28 nm. The UV–visible absorption spectra of PPy nanoparticles show that the absorption band undergoes a red shift with increasing fluence. Moreover upon irradiation the optical band gap energy decreases and Urbach’s energy increases with fluence. Thermo-gravimetric analysis studies suggest that upon irradiation the thermal stability of PPy nanoparticles increases which may be attributed to their enhanced crystallinity. Current–voltage characteristics of PPy nanoparticles exhibit non-Ohmic, symmetric behavior which increases with fluence

  7. Formation of austenite in high Cr ferritic/martensitic steels by high fluence neutron irradiation

    Science.gov (United States)

    Lu, Z.; Faulkner, R. G.; Morgan, T. S.

    2008-12-01

    High Cr ferritic/martensitic steels are leading candidates for structural components of future fusion reactors and new generation fission reactors due to their excellent swelling resistance and thermal properties. A commercial grade 12%CrMoVNb ferritic/martensitic stainless steel in the form of parent plate and off-normal weld materials was fast neutron irradiated up to 33 dpa (1.1 × 10 -6 dpa/s) at 400 °C and 28 dpa (1.7 × 10 -6 dpa/s) at 465 °C, respectively. TEM investigation shows that the fully martensitic weld metal transformed to a duplex austenite/ferrite structure due to high fluence neutron irradiation, the austenite was heavily voided (˜15 vol.%) and the ferrite was relatively void-free; whilst no austenite phases were detected in plate steel. Thermodynamic and phase equilibria software MTDATA has been employed for the first time to investigate neutron irradiation-induced phase transformations. The neutron irradiation effect is introduced by adding additional Gibbs free energy into the system. This additional energy is produced by high energy neutron irradiation and can be estimated from the increased dislocation loop density caused by irradiation. Modelling results show that neutron irradiation reduces the ferrite/austenite transformation temperature, especially for high Ni weld metal. The calculated results exhibit good agreement with experimental observation.

  8. Optical properties of Ar ions irradiated nanocrystalline ZrC and ZrN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martin, C. [Ramapo College of New Jersey, Mahwah, NJ 07430 (United States); Miller, K.H. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Makino, H. [Research Institute, Kochi University of Technology, Kami, Kochi, 782-8502 (Japan); Craciun, D. [National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Simeone, D. [CEA/DEN/DANS/DM2S/SERMA/LEPP-LRC CARMEN CEN Saclay France & CNRS/ SPMS UMR8785 LRC CARMEN, Ecole Centrale de Paris, F92292, Chatenay Malabry (United States); Craciun, V., E-mail: valentin.craciun@inflpr.ro [National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania)

    2017-05-15

    Employing wide spectral range (0.06–6 eV) optical reflectance measurements and high energy X-ray photoemission spectroscopy (HE-XPS), we studied the effect of 800 keV Ar ion irradiation on optical and electronic properties of nanocrystalline ZrC and ZrN thin films, which were obtain by the pulsed laser deposition technique. Both in ZrC and ZrN, we observed that irradiation affects the optical properties of the films mostly at low frequencies, which is dominated by the free carriers response. In both materials, we found a significant reduction in the free carriers scattering rate and an increase of the zero frequency conductivity, i.e. possible increase in mobility, at higher irradiation fluence. This is consistent with our previous findings that irradiation affects the crystallite size and the micro-strain, but it does not induce major changes in the chemical bonding. HE-XPS investigations further confirms the stability of the Zr-C and Zr-N bonds, despite a small increase in the surface region of the Zr-O bonds fraction with increasing irradiation fluence.

  9. Effects of C3+ ion irradiation on structural, electrical and magnetic properties of Ni nanotubes

    Science.gov (United States)

    Shlimas, D. I.; Kozlovskiy, A. L.; Zdorovets, M. V.; Kadyrzhanov, K. K.; Uglov, V. V.; Kenzhina, I. E.; Shumskaya, E. E.; Kaniukov, E. Y.

    2018-03-01

    Ion irradiation is an attractive method for obtaining nanostructures that can be used under extreme conditions. Also, it is possible to control the technological process that allows obtaining nanomaterials with new properties at ion irradiation. In this paper, we study the effect of irradiation with 28 MeV C3+ ions and fluences up to 5 × 1011 cm-2 on the structure and properties of template-synthesized nickel nanotubes with a length of 12 μm, with diameters of 400 nm, and a wall thickness of 100 nm. It is demonstrated that the main factor influencing the degradation of nanostructures under irradiation in PET template is the processes of mixing the material of nanostructures with the surrounding polymer. The influence of irradiation with various fluences on the crystal structure, electrical and magnetic properties of nickel nanotubes is studied.

  10. Tailoring molybdenum nanostructure evolution by low-energy He{sup +} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Hassanein, A.

    2015-10-30

    Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He{sup +} ions as a function of ion fluence (using a constant flux of 7.2 × 10{sup 20} ions m{sup −2} s{sup −1}) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament (“Mo fuzz”) growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He{sup +} ion irradiation deteriorates the surface significantly even at 2.1 × 10{sup 23} ions m{sup −2} fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20–45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 10{sup 24} ions m{sup −2} fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 10{sup 24} ions m{sup −2}, 7.2 × 10{sup 20} ions m{sup −2} s{sup −1} flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 10{sup 21} ions m{sup −2} s{sup −1} flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 10{sup 24} ions m{sup −2} fluence (at a constant

  11. Tailoring molybdenum nanostructure evolution by low-energy He+ ion irradiation

    International Nuclear Information System (INIS)

    Tripathi, J.K.; Novakowski, T.J.; Hassanein, A.

    2015-01-01

    Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He + ions as a function of ion fluence (using a constant flux of 7.2 × 10 20 ions m −2 s −1 ) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament (“Mo fuzz”) growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He + ion irradiation deteriorates the surface significantly even at 2.1 × 10 23 ions m −2 fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20–45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 10 24 ions m −2 fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 10 24 ions m −2 , 7.2 × 10 20 ions m −2 s −1 flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 10 21 ions m −2 s −1 flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 10 24 ions m −2 fluence (at a constant flux of 1.2 × 10 21 ions m −2 s −1 ) is quite similar to those for 2.6 × 10 24 ions m −2

  12. Tailoring molybdenum nanostructure evolution by low-energy He+ ion irradiation

    Science.gov (United States)

    Tripathi, J. K.; Novakowski, T. J.; Hassanein, A.

    2015-10-01

    Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He+ ions as a function of ion fluence (using a constant flux of 7.2 × 1020 ions m-2 s-1) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament ("Mo fuzz") growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He+ ion irradiation deteriorates the surface significantly even at 2.1 × 1023 ions m-2 fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20-45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 1024 ions m-2 fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 1024 ions m-2, 7.2 × 1020 ions m-2 s-1 flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 1021 ions m-2 s-1 flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 1024 ions m-2 fluence (at a constant flux of 1.2 × 1021 ions m-2 s-1) is quite similar to those for 2.6 × 1024 ions m-2 fluence, the nanostructure wall width extends up to ∼45

  13. Epidermal protection with cryogen spray cooling during high fluence pulsed dye laser irradiation: an ex vivo study.

    Science.gov (United States)

    Tunnell, J W; Nelson, J S; Torres, J H; Anvari, B

    2000-01-01

    Higher laser fluences than currently used in therapy (5-10 J/cm(2)) are expected to result in more effective treatment of port wine stain (PWS) birthmarks. However, higher incident fluences increase the risk of epidermal damage caused by absorption of light by melanin. Cryogen spray cooling offers an effective method to reduce epidermal injury during laser irradiation. The objective of this study was to determine whether high laser incident fluences (15-30 J/cm(2)) could be used while still protecting the epidermis in ex vivo human skin samples. Non-PWS skin from a human cadaver was irradiated with a Candela ScleroPlus Laser (lambda = 585 nm; pulse duration = 1.5 msec) by using various incident fluences (8-30 J/cm(2)) without and with cryogen spray cooling (refrigerant R-134a; spurt durations: 40-250 msec). Assessment of epidermal damage was based on histologic analysis. Relatively short spurt durations (40-100 msec) protected the epidermis for laser incident fluences comparable to current therapeutic levels (8-10 J/cm(2)). However, longer spurt durations (100-250 msec) increased the fluence threshold for epidermal damage by a factor of three (up to 30 J/cm(2)) in these ex vivo samples. Results of this ex vivo study show that epidermal protection from high laser incident fluences can be achieved by increasing the cryogen spurt duration immediately before pulsed laser exposure. Copyright 2000 Wiley-Liss, Inc.

  14. The vessel fluence; Fluence cuve

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-07-01

    This book presents the proceedings of the technical meeting on the reactors vessels fluence. They are grouped in eight sessions: the industrial context and the stakes of the vessels control; the organization and the methodology for the fluence computation; the concerned physical properties; the reference computation methods; the fluence monitoring in an industrial context; vessels monitoring under irradiation; others methods in the world; the research and development programs. (A.L.B.)

  15. Flux effect on neutron irradiation embrittlement of reactor pressure vessel steels irradiated to high fluences

    International Nuclear Information System (INIS)

    Soneda, N.; Dohi, K.; Nishida, K.; Nomoto, A.; Iwasaki, M.; Tsuno, S.; Akiyama, T.; Watanabe, S.; Ohta, T.

    2011-01-01

    Neutron irradiation embrittlement of reactor pressure vessel (RPV) steels is of great concern for the long term operation of light water reactors. In particular, the embrittlement of the RPV steels of pressurized water reactors (PWRs) at very high fluences beyond 6*10 19 n/cm 2 , E > 1 MeV, needs to be understood in more depth because materials irradiated in material test reactors (MTRs) to such high fluences show larger shifts than predicted by current embrittlement correlation equations available worldwide. The primary difference between the irradiation conditions of MTRs and surveillance capsules is the neutron flux. The neutron flux of MTR is typically more than one order of magnitude higher than that of surveillance capsule, but it is not necessarily clear if this difference in neutron flux causes difference in mechanical properties of RPV. In this paper, we perform direct comparison, in terms of mechanical property and microstructure, between the materials irradiated in surveillance capsules and MTRs to clarify the effect of flux at very high fluences and fluxes. We irradiate the archive materials of some of the commercial reactors in Japan in the MTR, LVR-15, of NRI Rez, Czech Republic. Charpy impact test results of the MTR-irradiated materials are compared with the data from surveillance tests. The comparison of the results of microstructural analyses by means of atom probe tomography is also described to demonstrate the similarity / differences in surveillance and MTR-irradiated materials in terms of solute atom behavior. It appears that high Cu material irradiated in a MTR presents larger shifts than those of surveillance data, while low Cu materials present similar embrittlement. The microstructural changes caused by MTR irradiation and surveillance irradiation are clearly different

  16. Bubbles formation in helium ion irradiated Cu/W multilayer nanocomposites: Effects on structure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Callisti, M., E-mail: M.Callisti@soton.ac.uk [National Centre for Advanced Tribology at Southampton, Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Karlik, M. [Department of Materials, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Trojanova 13, 120 00 Prague 2 (Czech Republic); Polcar, T. [National Centre for Advanced Tribology at Southampton, Faculty of Engineering and the Environment, University of Southampton, Southampton SO17 1BJ (United Kingdom); Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16627 Prague 6 (Czech Republic)

    2016-05-15

    This study investigates the effects of He bubbles on structural and mechanical properties of sputter-deposited Cu/W multilayers. A multilayer with a periodicity of 10 nm was deposited and subjected to helium ion irradiation with two different fluences. He bubbles formed mostly in Cu layers and their distribution was affected by He concentration and radiation damage. According to SRIM calculations, in low He concentration regions bubbles formed mostly along interfaces, while more homogeneously distributed bubbles were found in Cu layers and along columnar grain boundaries in higher He concentration regions. We suggest that the capability of interfaces to annihilate point defects is weakened by the He bubbles shielding effect. Nanoindentation tests revealed a hardness decrease amounting to ∼0.5 and ∼1 GPa for low and high fluences, respectively. The observed softening effect is attributed to He storage-induced changes in residual stresses and columnar grain boundary/interfacial sliding facilitated by He bubbles. - Highlights: • Cu/W nanocomposites were subjected to He{sup +} irradiation with different fluences. • He bubbles formed more homogeneously in higher He concentration regions. • Decrease in mechanical properties was observed for higher He concentrations. • He bubbles formation facilitated interfacial and grain boundary sliding.

  17. Reduction and structural modification of zirconolite on He{sup +} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Merry, E-mail: g41merry@gmail.com [Sant Longowal Institute of Engineering and Technology, Longowal, Sangrur, Punjab 148106 (India); Kulriya, P.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Road, New Delhi 110067 (India); Department of Mechanical, Aerospace & Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Shukla, Rishabh; Dhaka, R.S. [Novel Materials and Interface Physics Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kumar, Raj [Inter-University Accelerator Centre, Aruna Asaf Ali Road, New Delhi 110067 (India); Ghumman, S.S. [Sant Longowal Institute of Engineering and Technology, Longowal, Sangrur, Punjab 148106 (India)

    2016-07-15

    The immobilization of minor actinides and alkaline-earth metal is a major concern in nuclear industry due to their long-term radioactive contribution to the high level waste (HLW). Materials having zirconolite, pyrochlore, and perovskite structure are promising candidates for immobilization of HLW. The zirconolite which exhibits high radiation stability and corrosion resistance behavior is investigated for its radiation stability against alpha particles in the present study. CaZrTi{sub 2}O{sub 7} pellets prepared using solid state reaction techniques, were irradiated with 30 keV He{sup +} ions for the ion fluence varying from 1 × 10{sup 17} to 1 × 10{sup 21} ions/m{sup 2}. Scanning electron microscopy (SEM) images of the un-irradiated sample exhibited well separated grains with average size of about 6.8 μm. On the ion irradiation, value of the average grains size was about 7.1 μm, and change in the microstructure was insignificant. The X-ray photoelectron spectroscopy (XPS) studies showed a shift in the core level peak position (of Ca 2p, Ti 2p and Zr 3d) towards lower binding energy with respect to pristine sample as well as loss of oxygen was also observed for sample irradiated with the ion fluence of 1 × 10{sup 20} ions/m{sup 2}. These indicate a decrease in co-ordination number and the ionic character of M−O bond. Moreover, core level XPS signal was not detected for sample irradiated with ion fluence of 1 × 10{sup 21} ions/m{sup 2}, suggesting surface damage of the sample at this ion fluence. However, X-ray diffraction (XRD) studies showed that zirconolite was not amorphized even on irradiation up to a fluence order of 1 × 10{sup 21} ion/m{sup 2}. But, significant decrease in peak intensity due to creation of defects and a marginal positive peak shift due to tensile strain induced by irradiation, were observed. Thus, XRD along with XPS investigation suggests that reduction, decrease in co-ordination number, and increase in covalency are responsible for

  18. Structural response of titanate pyrochlores to swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Shamblin, Jacob; Tracy, Cameron L.; Ewing, Rodney C.; Zhang, Fuxiang; Li, Weixing; Trautmann, Christina; Lang, Maik

    2016-01-01

    The structure, size, and morphology of ion tracks resulting from irradiation of five different pyrochlore compositions (A 2 Ti 2 O 7 , A = Yb, Er, Y, Gd, Sm) with 2.2 GeV 197 Au ions were investigated by means of synchrotron X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Radiation-induced amorphization occurred in all five materials analyzed following an exponential rate as a function of ion fluence. XRD patterns showed a general trend of increasing susceptibility of amorphization with increasing ratio of A- to B-site cation ionic radii (r A /r B ) with the exception of Y 2 Ti 2 O 7 and Sm 2 Ti 2 O 7 . This indicates that the track size does not necessarily increase with r A /r B , in contrast with results from previous swift heavy ion studies on Gd 2 Zr 2-x Ti x O 7 pyrochlore materials. For Y 2 Ti 2 O 7 , this effect is attributed to the significantly lower electron density of this material relative to the lanthanide-bearing pyrochlores, thus lowering the electronic energy loss (dE/dx) of the high-energy ions in this composition. An energy loss normalization procedure was performed which reveals an initial increase of amorphous track size with r A /r B that saturates above a cation radius ratio larger than Gd 2 Ti 2 O 7 . This is in agreement with previous low-energy ion irradiation experiments and first principles calculations of the disordering energy of titanate pyrochlores indicating that the same trends in disordering energy apply to radiation damage induced in both the nuclear and electronic energy loss regimes. HRTEM images indicate that single ion tracks in Yb 2 Ti 2 O 7 and Er 2 Ti 2 O 7 , which have small A-site cations and low r A /r B , exhibit a core-shell structure with a small amorphous core surrounded by a larger disordered shell. In contrast, single tracks in Gd 2 Ti 2 O 7 and Sm 2 Ti 2 O 7 , have a larger amorphous core with minimal disordered shells.

  19. Ionic conduction in 70-MeV C5+-ion-irradiated poly(vinylidenefluoride- co-hexafluoropropylene)-based gel polymer electrolytes

    International Nuclear Information System (INIS)

    Saikia, D.; Kumar, A.; Singh, F.; Avasthi, D.K.; Mishra, N.C.

    2005-01-01

    In an attempt to increase the Li + -ion diffusivity, poly(vinylidenefluoride-co-hexafluoropropylene)-(propylene carbonate+diethyl carbonate)-lithium perchlorate gel polymer electrolyte system has been irradiated with 70-MeV C 5+ -ion beam of nine different fluences. Swift heavy-ion irradiation shows enhancement in ionic conductivity at lower fluences and decrease in ionic conductivity at higher fluences with respect to unirradiated gel polymer electrolyte films. Maximum room-temperature (303 K) ionic conductivity is found to be 2x10 -2 S/cm after irradiation with a fluence of 10 11 ions/cm 2 . This interesting result could be attributed to the fact that for a particular ion beam with a given energy, a higher fluence provides critical activation energy for cross linking and crystallization to occur, which results in the decrease in ionic conductivity. X-ray-diffraction results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤10 11 ions/cm 2 ) and increase in crystallinity at higher fluences (>10 11 ions/cm 2 ). Analysis of Fourier-transform infrared spectroscopy results suggests the bond breaking at a fluence of 5x10 9 ions/cm 2 and cross linking at a fluence of 10 12 ions/cm 2 and corroborate conductivity and x-ray-diffraction results. Scanning electron micrographs exhibit increased porosity of the polymer electrolyte after ion irradiation

  20. Analysis of radiation damage to Si solar cells under high-fluence electron irradiation

    International Nuclear Information System (INIS)

    Yamaguchi, Masafumi; Taylor, S.J.; Yang, Ming-Ju; Matsuda, Sumio; Kawasaki, Osamu; Hisamatsu, Tadashi.

    1996-01-01

    Radiation testing of Si n + -p-p + space solar cells has revealed an anomalous increase in short-circuit current I sc , followed by an abrupt decrease and cell failure, induced by high-fluence (>10 16 cm -2 ) electron irradiation. A model which can be used to explain these phenomena by expressing the change in majority-carrier concentration p of the base region as a function of the electron fluence has been proposed in addition to the well-known model in which I sc is decreased due to minority-carrier lifetime reduction with irradiation. The reduction in p due to majority-carrier trapping by radiation-induced defects has two effects; one is broadening of the depletion layer which contributes to the increase in the generated photocurrent and that in the recombination-generation current in the depletion layer, and the second is an increase in the resistivity of the base layer resulting in an abrupt decrease of I sc and failure of the solar cells. (author)

  1. Ion-irradiation-induced defects in bundles of carbon nanotubes

    International Nuclear Information System (INIS)

    Salonen, E.; Krasheninnikov, A.V.; Nordlund, K.

    2002-01-01

    We study the structure and formation yields of atomic-scale defects produced by low-dose Ar ion irradiation in bundles of single-wall carbon nanotubes. For this, we employ empirical potential molecular dynamics and simulate ion impact events over an energy range of 100-1000 eV. We show that the most common defects produced at all energies are vacancies on nanotube walls, which at low temperatures are metastable but long-lived defects. We further calculate the spatial distribution of the defects, which proved to be highly non-uniform. We also show that ion irradiation gives rise to the formations of inter-tube covalent bonds mediated by carbon recoils and nanotube lattice distortions due to dangling bond saturation. The number of inter-tube links, as well as the overall damage, linearly grows with the energy of incident ions

  2. Ag ion irradiated based sensor for the electrochemical determination of epinephrine and 5-hydroxytryptamine in human biological fluids

    Energy Technology Data Exchange (ETDEWEB)

    Goyal, Rajendra N., E-mail: rngcyfcy@iitr.ernet.in [Department of Chemistry, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Agrawal, Bharati [Department of Chemistry, Indian Institute of Technology Roorkee, Roorkee 247667 (India)

    2012-09-19

    Highlights: Black-Right-Pointing-Pointer Ag ions irradiation enhances the electrocatalytic activity of carbon nano tubes. Black-Right-Pointing-Pointer The low fluence of irradiation caused the ordering of carbon nano tubes. Black-Right-Pointing-Pointer Simultaneous determination of epinephrine and 5-hydroxytryptamine has been carried out. Black-Right-Pointing-Pointer The determination of the neurotransmitters in human blood and urine is reported. - Abstract: A promising and highly sensitive voltammetric method has been developed for the first time for the determination of epinephrine (EP) and 5-hydroxytryptamine (5-HT) using 120 MeV Ag ion irradiated multi-walled carbon nano tube (MWCNT) based sensor. The MWCNT were irradiated at various fluences of 1e12, 3e12 and 1e13 ions cm{sup -2} using palletron accelerator. The simultaneous determination of EP and 5-HT has been carried out in phosphate buffer solution of pH 7.20 using square wave voltammetry and cyclic voltammetry. Experimental results suggested that irradiation of MWCNT by Ag ions enhanced the electrocatalytic activity due to increase in effective surface area and insertion of Ag ions, leading to a remarkable enhancement in peak currents and shift of peak potentials to less positive values as compared to the unirradiated MWCNT (pristine). The developed sensor exhibited a linear relationship between peak current and concentration of EP and 5-HT in the range 0.1-105 {mu}M with detection limit (3{sigma}/b) of 2 nM and 0.75 nM, respectively. The practical utility of irradiation based MWCNT sensor has been demonstrated for the determination of EP and 5-HT in human urine and blood samples.

  3. Status of the design concepts for a high fluence fast pulse reactor (HFFPR)

    International Nuclear Information System (INIS)

    Philbin, J.S.; Nelson, W.E.; Rosenstroch, B.

    1978-10-01

    The report describes progress that has been made on the design of a High Fluence Fast Pulse Reactor (HFFPR) through the end of calendar year 1977. The purpose of this study is to present design concepts for a test reactor capable of accommodating large scale reactor safety tests. These concepts for reactor safety tests are adaptations of reactor concepts developed earlier for DOE/OMA for the conduct of weapon effects tests. The preferred driver core uses fuel similar to that developed for Sandia's ACPR upgrade. It is a BeO/UO 2 fuel that is gas cooled and has a high volumetric heat capacity. The present version of the design can drive large (217) pin bundles of prototypically enriched mixed oxide fuel well beyond the fuel's boiling point. Applicability to specific reactor safety accident scenarios and subsequent design improvements will be presented in future reports on this subject

  4. Effect of ion irradiation on the structure and the surface topography of carbon fiber

    International Nuclear Information System (INIS)

    Ligacheva, E.A.; Galyaeva, L.V.; Gavrilov, N.V.; Belykh, T.A.; Ligachev, A.E.; Sokhoreva, V.V.

    2006-01-01

    The effect of C + ion irradiation (40 keV, 10 15 - 10 19 cm -2 ) on the structure and surface topography of high-module carbon fibers is investigated. Interplanar distance and internal stress values are found to be minimal at a radiation dose of 10 17 cm -2 , the height of a layer pack being practically unchanged. The relief of ion irradiated carbon fiber surface constitutes regularly repetitive valleys and ridges spaced parallel with the fiber axis [ru

  5. Structural characterization of swift heavy ion irradiated polycarbonate

    International Nuclear Information System (INIS)

    Singh, Lakhwant; Samra, Kawaljeet Singh

    2007-01-01

    Makrofol-N polycarbonate thin films were irradiated with copper (50 MeV) and nickel (86 MeV) ions. The modified films were analyzed by UV-VIS, FTIR and XRD techniques. The experimental data was used to evaluate the formation of chromophore groups (conjugated system of bonds), degradation cross-section of the special functional groups, the alkyne formation and the amorphization cross-section. The investigation of UV-VIS spectra shows that the formation of chromophore groups is reduced at larger wavelength, however its value increases with the increase of ion fluence. Degradation cross-section for the different chemical groups present in the polycarbonate chains was evaluated from the FTIR data. It was found that there was an increase of degradation cross-section of chemical groups with the increase of electronic energy loss in polycarbonate. The alkyne and alkene groups were found to be induced due to swift heavy ion irradiation in polycarbonate. The radii of the alkyne production of about 2.74 and 2.90 nm were deduced for nickel (86 MeV) and copper (50 MeV) ions respectively. XRD analysis shows the decrease of the main XRD peak intensity. Progressive amorphization process of Makrofol-N with increasing fluence was traced by XRD measurements

  6. Effects of cavitation on damage calculations in ion-irradiated P7 alloy

    International Nuclear Information System (INIS)

    Sindelar, R.L.; Farrens, S.N.; Kulcinski, G.L.

    1985-01-01

    The purpose of this study is to investigate the effect of voids on the depth-dependent damage energy in ion-irradiated metals. Corrections to the dose at the swelling peak will be used to obtain the swelling rate of ion-irradiated 316-type stainless steels. Samples of the P7 alloy were ion-irradiated to four fluence levels up to a peak dose level of 100 dpa at 650 0 C. The depth-dependent void parameters extracted in cross section were used to model the effect of voids on the depth-dependent damage produced during 14 MeV nickel ion irradiation. An increase in the range of damage produced from the original foil surface for the target containing voids was modeled as a first-order correction to the damage profile. A second-order effect, void straggling, was shown to cause a time-dependent decrease in the damage rate at the peak swelling depth. Corrections applied to the dose at the peak swelling depth yield swelling rates approaching 0.7%/dpa

  7. Compaction in optical fibres and fibre Bragg gratings under nuclear reactor high neutron and gamma fluence

    Energy Technology Data Exchange (ETDEWEB)

    Remy, L.; Cheymol, G. [CEA, French Nuclear Energy Commission, Nuclear Energy Division, DPC/SEARS/LISL Bat 467 CEA Saclay 91191 Gif/Yvette Cedex (France); Gusarov, A. [SCK.CEN - Belgian Nuclear Research center, Boeretang 200 2400 Mol (Belgium); Morana, A.; Marin, E.; Girard, S. [Universite de Saint-Etienne, Laboratoire Hubert Curien, UMR CNRS5516, 18, rue du Pr. Lauras, F-42000 Saint-Etienne (France)

    2015-07-01

    In the framework of the development by CEA and SCK.CEN of a Fabry Perot Sensor (FPS) able to measure dimensional changes in Material Testing Reactor (MTR), the first goal of the SAKE 1 (Smirnof extention - Additional Key-tests on Elongation of glass fibres) irradiation was to measure the linear compaction of single mode fibres under high fast neutron fluence. Indeed, the compaction of the fibre which forms one side of the Fabry Perot cavity, may in particular cause a noticeable measurement error. An accurate quantification of this effect is then required to predict the radiation-induced drift and optimize the sensor design. To achieve this, an innovative approach was used. Approximately seventy uncoated fibre tips (length: 30 to 50 mm) have been prepared from several different fibre samples and were installed in the SCK.CEN BR2 reactor (Mol Belgium). After 22 days of irradiation a total fast (E > 1 MeV) fluence of 3 to 5x10{sup 19} n{sub fast}/cm{sup 2}, depending on the sample location, was accumulated. The temperature during irradiation was 291 deg. C, which is not far from the condition of the intended FPS use. A precise measurement of each fibre tip length was made before the irradiation and compared to the post irradiation measurement highlighting a decrease of the fibres' length corresponding to about 0.25% of linear compaction. The amplitude of the changes is independent of the capsule, which could mean that the compaction effect saturates even at the lowest considered fluence. In the prospect of performing distributed temperature measurement in MTR, several fibre Bragg gratings written using a femtosecond laser have been also irradiated. All the gratings were written in radiation hardened fibres, and underwent an additional treatment with a procedure enhancing their resistance to ionizing radiations. A special mounting made it possible to test the reflection and the transmission of the gratings on fibre samples cut down to 30 to 50 mm. The comparison

  8. Phase transformation induced by swift heavy ion irradiation of pure metals

    International Nuclear Information System (INIS)

    Dammak, H.; Dunlop, A.; Lesueur, D.

    1996-01-01

    It is now unambiguously established that high electronic energy deposition (HEED), obtained by swift heavy ion irradiation, plays an important role in the damage processes of pure metallic targets: (i) annealing of the defects created by elastic collisions in Fe, Nb, Ni and Pt, and (ii) creation of additional defects in Co, Fe, Ti and Zr. For Ti, we have recently evidenced by transmission electron microscopy observations that the damage creation by HEED is very important and leads to a phase transformation. Titanium evolves from the equilibrium hcp alpha-phase to the high pressure omega-phase. We studied the influence of three parameters on this phase transformation: ion fluence, electronic stopping power and irradiation temperature. The study of Ti and the results concerning other metals (Fe, Zr, etc.) and the semi-metal Bi allow us to propose criteria to predict in which metals HEED could induce damage: those which undergo a phase transformation under high pressure. As a matter of fact, beryllium is strongly damaged when submitted to HEED and seems to behave very similarly to titanium. The fact that such phase changes from a crystalline form to another form were only observed in those metals in which high pressure phases exist in the pressure-temperature diagram, strongly supports the Coulomb explosion model in which the generation of (i) a shock wave and (ii) collective atomic movements are invoked to account for the observed damage creation. (orig.)

  9. Tailoring magnetism by light-ion irradiation

    International Nuclear Information System (INIS)

    Fassbender, J; Ravelosona, D; Samson, Y

    2004-01-01

    Owing to their reduced dimensions, the magnetic properties of ultrathin magnetic films and multilayers, e.g. magnetic anisotropies and exchange coupling, often depend strongly on the surface and interface structure. In addition, chemical composition, crystallinity, grain sizes and their distribution govern the magnetic behaviour. All these structural properties can be modified by light-ion irradiation in an energy range of 5-150 keV due to the energy loss of the ions in the solid along their trajectory. Consequently the magnetic properties can be tailored by ion irradiation. Similar effects can also be observed using Ga + ion irradiation, which is the common ion source in focused ion beam lithography. Examples of ion-induced modifications of magnetic anisotropies and exchange coupling are presented. This review is limited to radiation-induced structural changes giving rise to a modification of magnetic parameters. Ion implantation is discussed only in special cases. Due to the local nature of the interaction, magnetic patterning without affecting the surface topography becomes feasible, which may be of interest in applications. The main patterning technique is homogeneous ion irradiation through masks. Focused ion beam and ion projection lithography are usually only relevant for larger ion masses. The creation of magnetic feature sizes below 50 nm is shown. In contrast to topographic nanostructures the surrounding area of these nanostructures can be left ferromagnetic, leading to new phenomena at their mutual interface. Most of the material systems discussed here are important for technological applications. The main areas are magnetic data storage applications, such as hard magnetic media with a large perpendicular magnetic anisotropy or patterned media with an improved signal to noise ratio and magnetic sensor elements. It will be shown that light-ion irradiation has many advantages in the design of new material properties and in the fabrication technology of

  10. High Neutron Fluence Survivability Testing of Advanced Fiber Bragg Grating Sensors

    International Nuclear Information System (INIS)

    Fielder, Robert S.; Klemer, Daniel; Stinson-Bagby, Kelly L.

    2004-01-01

    The motivation for the reported research was to support NASA space nuclear power initiatives through the development of advanced fiber optic sensors for space-based nuclear power applications. The purpose of the high-neutron fluence testing was to demonstrate the survivability of fiber Bragg grating (FBG) sensors in a fission reactor environment. 520 FBGs were installed in the Ford reactor at the University of Michigan. The reactor was operated for 1012 effective full power hours resulting in a maximum neutron fluence of approximately 5x1019 n/cm2, and a maximum gamma dose of 2x103 MGy gamma. This work is significant in that, to the knowledge of the authors, the exposure levels obtained are approximately 1000 times higher than for any previously published experiment. Four different fiber compositions were evaluated. An 87% survival rate was observed for fiber Bragg gratings located at the fuel centerline. Optical Frequency Domain Reflectometry (OFDR), originally developed at the NASA Langley Research Center, can be used to interrogate several thousand low-reflectivity FBG strain and/or temperature sensors along a single optical fiber. A key advantage of the OFDR sensor technology for space nuclear power is the extremely low mass of the sensor, which consists of only a silica fiber 125μm in diameter. The sensors produced using this technology will fill applications in nuclear power for current reactor plants, emerging Generation-IV reactors, and for space nuclear power. The reported research was conducted by Luna Innovations and was funded through a Small Business Innovative Research (SBIR) contract with the NASA Glenn Research Center

  11. Light Water Reactor Sustainability Program BWR High-Fluence Material Project: Assessment of the Role of High-Fluence on the Efficiency of HWC Mitigation on SCC Crack Growth Rates

    Energy Technology Data Exchange (ETDEWEB)

    Sebastien Teysseyre

    2014-04-01

    As nuclear power plants age, the increasing neutron fluence experienced by stainless steels components affects the materials resistance to stress corrosion cracking and fracture toughness. The purpose of this report is to identify any new issues that are expected to rise as boiling water reactor power plants reach the end of their initial life and to propose a path forward to study such issues. It has been identified that the efficiency of hydrogen water chemistry mitigation technology may decrease as fluence increases for high-stress intensity factors. This report summarizes the data available to support this hypothesis and describes a program plan to determine the efficiency of hydrogen water chemistry as a function of the stress intensity factor applied and fluence. This program plan includes acquisition of irradiated materials, generation of material via irradiation in a test reactor, and description of the test plan. This plan offers three approaches, each with an estimated timetable and budget.

  12. Effect of radiation quality on radical formation in ion-irradiated solid alanine

    Energy Technology Data Exchange (ETDEWEB)

    Koizumi, Hitoshi; Ichikawa, Tsuneki; Yoshida, Hiroshi [Hokkaido Univ., Sapporo (Japan); Namba, Hideki; Taguchi, Mitsumasa; Kojima, Takuji

    1997-03-01

    Radical formation in solid alanine irradiated with H{sup +} and He{sup +} ions of 0.5-3.0 MeV and with heavy ions of hundreds of MeV was examined by the ESR method. Radical yield is constant below a critical fluence, and the yield decreases above the fluence. The critical fluence for the H{sup +} and He{sup +} ions is about 10{sup 12} ions cm{sup -2}, while the critical fluence for the heavy ions is 10{sup 10}-10{sup 11} ions cm{sup -2}. G-value of the radical formation (radicals per 100 eV absorbed dose) is obtained from the constant yield at the low fluences. The G-value depends on the radiation quality. This dependence is ascribed to the difference of local dose in the ion tracks. The fluence-yield curves were simulated with a model assuming cylindrical shape of ion tracks and dose-yield relationship for {gamma}-irradiation. This model well explains the fluence-yield curves for the ion irradiations. (author)

  13. Heavy ion irradiation of crystalline water ice. Cosmic ray amorphisation cross-section and sputtering yield

    Science.gov (United States)

    Dartois, E.; Augé, B.; Boduch, P.; Brunetto, R.; Chabot, M.; Domaracka, A.; Ding, J. J.; Kamalou, O.; Lv, X. Y.; Rothard, H.; da Silveira, E. F.; Thomas, J. C.

    2015-04-01

    Context. Under cosmic irradiation, the interstellar water ice mantles evolve towards a compact amorphous state. Crystalline ice amorphisation was previously monitored mainly in the keV to hundreds of keV ion energies. Aims: We experimentally investigate heavy ion irradiation amorphisation of crystalline ice, at high energies closer to true cosmic rays, and explore the water-ice sputtering yield. Methods: We irradiated thin crystalline ice films with MeV to GeV swift ion beams, produced at the GANIL accelerator. The ice infrared spectral evolution as a function of fluence is monitored with in-situ infrared spectroscopy (induced amorphisation of the initial crystalline state into a compact amorphous phase). Results: The crystalline ice amorphisation cross-section is measured in the high electronic stopping-power range for different temperatures. At large fluence, the ice sputtering is measured on the infrared spectra, and the fitted sputtering-yield dependence, combined with previous measurements, is quadratic over three decades of electronic stopping power. Conclusions: The final state of cosmic ray irradiation for porous amorphous and crystalline ice, as monitored by infrared spectroscopy, is the same, but with a large difference in cross-section, hence in time scale in an astrophysical context. The cosmic ray water-ice sputtering rates compete with the UV photodesorption yields reported in the literature. The prevalence of direct cosmic ray sputtering over cosmic-ray induced photons photodesorption may be particularly true for ices strongly bonded to the ice mantles surfaces, such as hydrogen-bonded ice structures or more generally the so-called polar ices. Experiments performed at the Grand Accélérateur National d'Ions Lourds (GANIL) Caen, France. Part of this work has been financed by the French INSU-CNRS programme "Physique et Chimie du Milieu Interstellaire" (PCMI) and the ANR IGLIAS.

  14. Test of Fibre Bragg Gratings samples under High Fast Neutrons Fluence

    Science.gov (United States)

    Cheymol, G.; Remy, L.; Gusarov, A.; Kinet, D.; Mégret, P.; Laffont, G.; Blanchet, T.; Morana, A.; Marin, E.; Girard, S.

    2018-01-01

    Optical fibre sensors (OFS) are worthy of interest for measurements in nuclear reactor thanks to their unique features, particularly compact size and remote multi-point sensing for some of them. But besides non negligible constraints associated with the high temperature environment of the experiments of interest, it is well known that the performances of OFS can be severely affected by high level of radiations. The Radiation Induced Attenuation (RIA) in the fibre is probably most known effect, which can be to some extent circumvented by using rad hard fibres to limit the dynamic loss. However, when the fast neutron fluence reaches 1018 to 1019 n/cm2, the density and index variations associated to structural changes may deteriorate drastically the performances of OFS even if they are based on rad hard fibres, by causing direct errors in the measurements of temperature and/or strain changes. The aim of the present study is to access the effect of nuclear radiations on the Fabry Perot (FP) and of Fibre Bragg Grating (FBG) sensors through the comparison of measurements made on these OFS - or part of them - before and after irradiation [1]. In the context of development of OFS for high irradiation environment and especially for Material Testing Reactors (MTRs), Sake 2 experiment consists in an irradiation campaign at high level of gamma and neutron fluxes conducted on samples of fibre optics - bare or functionalised with FBG. The irradiation was performed at two levels of fast neutron fluence: 1 and 3.1019 n/cm2 (E>1MeV), at 250°± 25°C, in the SCK•CEN BR2 reactor (Mol Belgium). An irradiation capsule was designed to allow irradiation at the specified temperature without active control. The neutron fluence was measured with activation dosimeters and the results were compared with MCPN computations. Investigation of bare samples gives information on the density changes, while for the FBGs both density and refractive index perturbation are involved. Some results for

  15. Resveratrol Prevents High Fluence Red Light-Emitting Diode Reactive Oxygen Species-Mediated Photoinhibition of Human Skin Fibroblast Migration.

    Directory of Open Access Journals (Sweden)

    Andrew Mamalis

    Full Text Available Skin fibrosis is a significant medical problem that leads to a functional, aesthetic, and psychosocial impact on quality-of-life. Light-emitting diode-generated 633-nm red light (LED-RL is part of the visible light spectrum that is not known to cause DNA damage and is considered a safe, non-invasive, inexpensive, and portable potential alternative to ultraviolet phototherapy that may change the treatment paradigm of fibrotic skin disease.The goal of our study was to investigate the how reactive oxygen species (ROS free radicals generated by high fluence LED-RL inhibit the migration of skin fibroblasts, the main cell type involved in skin fibrosis. Fibroblast migration speed is increased in skin fibrosis, and we studied cellular migration speed of cultured human skin fibroblasts as a surrogate measure of high fluence LED-RL effect on fibroblast function. To ascertain the inhibitory role of LED-RL generated ROS on migration speed, we hypothesized that resveratrol, a potent antioxidant, could prevent the photoinhibitory effects of high fluence LED-RL on fibroblast migration speed.High fluence LED-RL generated ROS were measured by flow cytometry analysis using dihydrorhodamine (DHR. For purposes of comparison, we assessed the effects of ROS generated by hydrogen peroxide (H2O2 on fibroblast migration speed and the ability of resveratrol, a well known antioxidant, to prevent LED-RL and H2O2 generated ROS-associated changes in fibroblast migration speed. To determine whether resveratrol could prevent the high fluence LED-RL ROS-mediated photoinhibition of human skin fibroblast migration, treated cells were incubated with resveratrol at concentrations of 0.0001% and 0.001% for 24 hours, irradiated with high fluences LED-RL of 480, 640, and 800 J/cm2.High fluence LED-RL increases intracellular fibroblast ROS and decreases fibroblast migration speed. LED-RL at 480, 640 and 800 J/cm2 increased ROS levels to 132.8%, 151.0%, and 158.4% relative to matched

  16. Effect of 120 MeV Ag{sup 9+} ion irradiation of YCOB single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Arun Kumar, R., E-mail: rarunpsgtech@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Department of Basic Sciences - Physics Division, PSG College of Technology, Coimbatore 641 004 (India); Dhanasekaran, R. [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

    2012-09-15

    Single crystals of yttrium calcium oxy borate (YCOB) grown from boron-tri-oxide flux were subjected to swift heavy ion irradiation using silver Ag{sup 9+} ions from the 15 UD Pelletron facility at Inter University Accelerator Center, New Delhi. The crystals were irradiated at 1 Multiplication-Sign 10{sup 13}, 5 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions/cm{sup 2} fluences at room temperature and with 5 Multiplication-Sign 10{sup 13} ions/cm{sup 2} fluence at liquid nitrogen temperature. The pristine and the irradiated samples were characterized by glancing angle X-ray diffraction, UV-Vis-NIR and photoluminescence studies. From the characterization studies performed on the samples, it is inferred that the crystals irradiated at liquid nitrogen temperature had fewer defects compared to the crystals irradiated at room temperature and the defects increased when the ion fluence was increased at room temperature.

  17. The influence of microstructure on blistering and bubble formation by He ion irradiation in Al alloys

    International Nuclear Information System (INIS)

    Soria, S.R.; Tolley, A.; Sánchez, E.A.

    2015-01-01

    The influence of microstructure and composition on the effects of ion irradiation in Al alloys was studied combining Atomic Force Microscopy, Scanning Electron Microscopy and Transmission Electron Microscopy. For this purpose, irradiation experiments with 20 keV He + ions at room temperature were carried out in Al, an Al–4Cu (wt%) supersaturated solid solution, and an Al-5.6Cu-0.5Si-0.5Ge (wt.%) alloy with a very high density of precipitates, and the results were compared. In Al and Al–4Cu, He bubbles were found with an average size in between 1 nm and 2 nm that was independent of fluence. The critical fluence for bubble formation was higher in Al–4Cu than in Al. He bubbles were also observed below the critical fluence after post irradiation annealing in Al–4Cu. The incoherent interfaces between the equilibrium θ phase and the Al matrix were found to be favorable sites for the formation of He bubbles. Instead, no bubbles were observed in the precipitate rich Al-5.6Cu-0.5Si-0.5Ge alloy. In all alloys, blistering was observed, leading to surface erosion by exfoliation. The blistering effects were more severe in the Al-5.6Cu-0.5Si-0.5Ge alloy, and they were enhanced by increasing the fluence rate. - Highlights: • In Al and Al–4Cu, He bubbles were formed, but no bubbles were observed in Al-5.6Cu-0.5Si-0.5Ge. • Bubble formation was enhanced at incoherent matrix/precipitate interfaces in Al–4Cu. • The bubble size was insensitive to displacement rate in pure Al. • In Al and Al-5.6Cu-0.5Si-0.5Ge blistering was observed, which was more severe in the alloy. • Blistering effects were enhanced by increasing the displacement rate in Al and Al–4Cu.

  18. Enhanced photoelectrochemical properties of 100 MeV Si8+ ion irradiated barium titanate thin films

    International Nuclear Information System (INIS)

    Solanki, Anjana; Choudhary, Surbhi; Satsangi, Vibha R.; Shrivastav, Rohit; Dass, Sahab

    2013-01-01

    Highlights: ► Effect of 100 MeV Si 8+ ion irradiation on photoelectrochemical (PEC) properties of BaTiO 3 thin films was studied. ► Films were deposited on Indium doped Tin Oxide (ITO) coated glass by sol–gel spin coating technique. ► Optimal irradiation fluence for best PEC response was 5 × 10 11 ion cm −2 . ► Maximum photocurrent density was observed to be 0.7 mA cm −2 at 0.4 V/SCE. ► Enhanced photo-conversion efficiency was due to maximum negative flatband potential, donor density and lowest resistivity. -- Abstract: Effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate (BaTiO 3 ) thin films were investigated by irradiating films with 100 MeV Si 8+ ions at different ion fluences in the range of 1 × 10 11 –2 × 10 13 ions cm −2 . BaTiO 3 thin films were deposited on indium tin oxide coated glass substrate by sol gel spin coating method. Irradiation induced modifications in the films were analyzed using the results from XRD, SEM, cross sectional SEM, AFM and UV–Vis spectrometry. Maximum photocurrent density of 0.7 mA cm −2 at 0.4 V/SCE and applied bias hydrogen conversion efficiency (ABPE) of 0.73% was observed for BaTiO 3 film irradiated at 5 × 10 11 ions cm −2 , which can be attributed to maximum negative value of the flatband potential and donor density and lowest resistivity

  19. Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

    International Nuclear Information System (INIS)

    Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

    2008-01-01

    The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

  20. 160 MeV Ni{sup 12+} ion irradiation effects on the structural, optical and electrical properties of spherical polypyrrole nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Hazarika, J.; Kumar, A., E-mail: ask@tezu.ernet.in

    2014-01-01

    Highlights: • Upon SHI irradiation the average diameters of PPy nanoparticles increases. • Crystallinity of PPy nanoparticles increases with increasing ion fluence. • IR active vibrational bands have different cross sections for SHI irradiation. • Upon SHI irradiation optical band gap energy of PPy nanoparticles decreases. • Upon SHI irradiation thermal stability of PPy nanoparticles increases. -- Abstract: In this study we report 160 MeV Ni{sup 12+} swift heavy ion irradiation induced enhancement in the structural, optical and electrical properties of spherical polypyrrole (PPy) nanoparticles. High resolution transmission electron microscope results show that the pristine PPy nanoparticles have an average diameter of 11 nm while upon irradiation the average diameter increases to 18 nm at the highest ion fluence of 1 × 10{sup 12} ions/cm{sup 2}. X-ray diffraction studies show an enhancement of crystallinity and average crystallite size of PPy nanoparticles with increasing fluence. Studies of Fourier transform infrared spectra suggest the structural modifications of different functional groups upon irradiation. It also reveals that different functional groups have different sensitivity to irradiation. The infrared active N–H vibrational band at 3695 cm{sup −1} is more sensitive to irradiation with a formation cross-section of 5.77 × 10{sup −13} cm{sup 2} and effective radius of 4.28 nm. The UV–visible absorption spectra of PPy nanoparticles show that the absorption band undergoes a red shift with increasing fluence. Moreover upon irradiation the optical band gap energy decreases and Urbach’s energy increases with fluence. Thermo-gravimetric analysis studies suggest that upon irradiation the thermal stability of PPy nanoparticles increases which may be attributed to their enhanced crystallinity. Current–voltage characteristics of PPy nanoparticles exhibit non-Ohmic, symmetric behavior which increases with fluence.

  1. Controlling the stainless steel surface wettability by nanosecond direct laser texturing at high fluences

    Science.gov (United States)

    Gregorčič, P.; Šetina-Batič, B.; Hočevar, M.

    2017-12-01

    This work investigates the influence of the direct laser texturing at high fluences (DLT-HF) on surface morphology, chemistry, and wettability. We use a Nd:YAG laser ( λ = 1064 nm) with pulse duration of 95 ns to process stainless steel surface. The surface morphology and chemistry after the texturing is examined by using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and electron backscatter diffraction (EBSD), while the surface wettability is evaluated by measuring the static contact angle. Immediately after the texturing, the surface is superhydrophilic in a saturated Wenzel regime. However, this state is not stable and the superhydrophilic-to-superhydrophobic transition happens if the sample is kept in atmospheric air for 30 days. After this period, the laser-textured stainless steel surface expresses lotus-leaf-like behavior. By using a high-speed camera at 10,000 fps, we measured that the water droplet completely rebound from this superhydrophobic surface after the contact time of 12 ms.

  2. Evolution of arsenic in high fluence plasma immersion ion implanted silicon : Behavior of the as-implanted surface

    NARCIS (Netherlands)

    Vishwanath, V.; Demenev, E.; Giubertoni, D.; Vanzetti, L.; Koh, A. L.; Steinhauser, G.; Pepponi, G.; Bersani, M.; Meirer, F.; Foad, M. A.

    2015-01-01

    High fluence (>1015 ions/cm2) low-energy (3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon

  3. Rapid-relocation model for describing high-fluence retention of rare gases implanted in solids

    Science.gov (United States)

    Wittmaack, K.

    2009-09-01

    It has been known for a long time that the maximum areal density of inert gases that can be retained in solids after ion implantation is significantly lower than expected if sputter erosion were the only limiting factor. The difference can be explained in terms of the idea that the trapped gas atoms migrate towards the surface in a series of detrapping-trapping events so that reemission takes place well before the receding surface has advanced to the original depth of implantation. Here it is shown that the fluence dependent shift and shape of implantation profiles, previously determined by Rutherford backscattering spectrometry (RBS), can be reproduced surprisingly well by extending a simple retention model originally developed to account only for the effect of surface recession by sputtering ('sputter approximation'). The additional migration of inert gas atoms is formally included by introducing an effective shift parameter Yeff as the sum of the sputtering yield Y and a relocation efficiency Ψrel. The approach is discussed in detail for 145 keV Xe + implanted in Si at normal incidence. Yeff was found to increase with increasing fluence, to arrive at a maximum equivalent to about twice the sputtering yield. At the surface one needs to account for Xe depletion and the limited depth resolution of RBS. The (high-fluence) effect of implanted Xe on the range distributions is discussed on the basis of SRIM calculations for different definitions of the mean target density, including the case of volume expansion (swelling). To identify a 'range shortening' effect, the implanted gas atoms must be excluded from the definition of the depth scale. The impact-energy dependence of the relocation efficiency was derived from measured stationary Xe concentrations. Above some characteristic energy (˜20 keV for Ar, ˜200 keV for Xe), Y exceeds Ψrel. With decreasing energy, however, Ψrel increases rapidly. Below 2-3 keV more than 90% of the reemission of Ar and Xe is estimated

  4. The study on the electrical resistivity of Cu/V multilayer films subjected to helium (He) ion irradiation

    Science.gov (United States)

    Wang, P. P.; Xu, C.; Fu, E. G.; Du, J. L.; Gao, Y.; Wang, X. J.; Qiu, Y. H.

    2018-05-01

    Sputtering-deposited Cu/V multilayer films with the individual layer thickness varying from 2.5 nm to 100 nm were irradiated by 1 MeV helium (He) ion at the fluence of 6 ×1016 ions ·cm-2 at room temperature. The resistivity of Cu/V multilayer films after ion irradiation was evaluated as a function of individual layer thickness at 300 K and compared with their resistivity before ion irradiation. The results show that the resistivity change before and after ion irradiation is largely determined by the interface structure, grain boundary and radiation induced defects. A model amended based on the model used in describing the resistivity of as-deposited Cu/V multilayer films was proposed to describe the resistivity of ion irradiated Cu/V multilayer films by considering the point defects induced by ion irradiation, the effect of interface absorption on defects and the effect of interface microstructure in the multilayer films.

  5. Retention of nanocrystalline WN{sub x} layers exposed to high-fluence deuterium plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Vassallo, E., E-mail: vassallo@ifp.cnr.it [CNR, Istituto di Fisica del Plasma “ P. Caldirola ”, 20125 Milano (Italy); Caniello, R., E-mail: caniello@ifp.cnr.it [CNR, Istituto di Fisica del Plasma “ P. Caldirola ”, 20125 Milano (Italy); Angella, G., E-mail: angella@ieni.cnr.it [CNR, Istituto per l’Energetica e le Interfasi, 20125 Milano (Italy); Dellasega, D., E-mail: david.dellasega@polimi.it [CNR, Istituto di Fisica del Plasma “ P. Caldirola ”, 20125 Milano (Italy); Politecnico di Milano, Dipartimento di Energia, 20156 Milano (Italy); Granucci, G., E-mail: granucci@ifp.cnr.it [CNR, Istituto di Fisica del Plasma “ P. Caldirola ”, 20125 Milano (Italy); Mellera, V., E-mail: mellera@ifp.cnr.it [CNR, Istituto di Fisica del Plasma “ P. Caldirola ”, 20125 Milano (Italy); Minelli, D., E-mail: minelli@ifp.cnr.it [CNR, Istituto di Fisica del Plasma “ P. Caldirola ”, 20125 Milano (Italy); Pedroni, M., E-mail: pedroni@ifp.cnr.it [CNR, Istituto di Fisica del Plasma “ P. Caldirola ”, 20125 Milano (Italy); Ricci, D., E-mail: ricci@ifp.cnr.it [CNR, Istituto di Fisica del Plasma “ P. Caldirola ”, 20125 Milano (Italy); Rigato, V., E-mail: valentino.rigato@lnl.infn.it [INFN – Laboratori Nazionali di Legnaro, Legnaro, 35020 Padova (Italy); and others

    2015-11-15

    For high-power plasma operation regimes in tokamak fusion devices the power load onto W divertor plates must be kept below acceptable limits for materials. N{sub 2} gas is likely to be used to reduce the power load. However, because of erosion phenomena, WN{sub x} compounds will be produced in the divertor and tritium retention is issue of concern. We report recent experiments using the GYM linear plasma device that examined D retention in WN{sub x} compounds exposed to D plasma at divertor relevant fluence (∼10{sup 24} m{sup −2}). It is shown that WN{sub x} compounds with different nitrogen concentration have very similar D retention, lower than the case of the tungsten without nitrogen and in any case lower than the acceptable limit for operation in ITER. - Highlights: • Nitrogen in the process of tungsten redeposition in tokamak plays a very important role for fuel retention. • Incorporation of nitrogen in tungsten decreases the D retention. • WN{sub x} compounds showed a level of D retention lower than the acceptable limit for tritium (T) operation in ITER.

  6. Ultra High Fluence Radiation Monitoring Technology for the Future Circular Collider at CERN

    CERN Document Server

    Gorine, Georgi; Mandic, Igor; Jazbec, Anže; Snoj, Luka; Capeans, Mar; Moll, Michael; Bouvet, Didier; Ravotti, Federico; Sallese, Jean-Michel

    2018-01-01

    The Future Circular Collider (FCC) is foreseen as the next generation ~100 km long synchrotron to be built in the Geneva area starting 2050. This machine is expected to reach an energy level of 100 TeV generating unprecedented radiation levels >100 times higher than in today`s Large Hadron Collider (LHC). Current Radiation Monitoring system, like the RADMONs employed in the LHC, will not be capable to function and withstand this harsh environment. The development of a new Ultra High Fluence and Dose Radiation Sensor is a key element to allow irradiation tests of FCC equipment and, at a later stage, to monitor radiation levels in the FCC itself. In this paper, we present an innovative dosimetry solution based on thin layers of metals, which resistivity is shown to increase significantly due to the accumulated displacement damage. After describing the fabrication techniques used to manufacture these Radiation Dependent Resistors (RDR), we show and discuss the results of the irradiation experiments carried out ...

  7. Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations; Elaboration par implantation ionique de nanoparticules de cobalt dans la silice et modifications de leurs proprietes sous irradiation d'electrons et d'ions de haute energie

    Energy Technology Data Exchange (ETDEWEB)

    D' Orleans, C

    2003-07-15

    This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co{sup +} ions have been implanted at 160 keV at fluences of 2.10{sup 16}, 5.10{sup 16} and 10{sup 17} at/cm{sup 2}, and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10{sup 16} Co{sup +}/cm{sup 2} at 77 K, to 9.7 nm at 10{sup 17} Co{sup +}/cm{sup 2} at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

  8. Elaboration by ion implantation of cobalt nano-particles in silica layers and modifications of their properties by electron and swift heavy ion irradiations; Elaboration par implantation ionique de nanoparticules de cobalt dans la silice et modifications de leurs proprietes sous irradiation d'electrons et d'ions de haute energie

    Energy Technology Data Exchange (ETDEWEB)

    D' Orleans, C

    2003-07-15

    This work aims to investigate the capability of ion irradiations to elaborate magnetic nano-particles in silica layers, and to modify their properties. Co{sup +} ions have been implanted at 160 keV at fluences of 2.10{sup 16}, 5.10{sup 16} and 10{sup 17} at/cm{sup 2}, and at temperatures of 77, 295 and 873 K. The dependence of the particle size on the implantation fluence, and more significantly on the implantation temperature has been shown. TEM (transmission electronic microscopy) observations have shown a mean diameter varying from 1 nm for implantations at 2.10{sup 16} Co{sup +}/cm{sup 2} at 77 K, to 9.7 nm at 10{sup 17} Co{sup +}/cm{sup 2} at 873 K. For high temperature implantations, two regions of particles appear. Simulations based on a kinetic 3-dimensional lattice Monte Carlo method reproduce quantitatively the features observed for implantations. Thermal treatments induce the ripening of the particles. Electron irradiations at 873 K induce an important increase in mean particle sizes. Swift heavy ion irradiations also induce the ripening of the particles for low fluences, and an elongation of the particles in the incident beam direction for high fluences, resulting in a magnetic anisotropy. Mechanisms invoked in thermal spike model could also explain this anisotropic growth. (author)

  9. Mono and sequential ion irradiation induced damage formation and damage recovery in oxide glasses: Stopping power dependence of the mechanical properties

    International Nuclear Information System (INIS)

    Mir, A.H.; Monnet, I.; Toulemonde, M.; Bouffard, S.; Jegou, C.; Peuget, S.

    2016-01-01

    Simple and complex borosilicate glasses were irradiated with single and double ion beams of light and heavy ions over a broad fluence and stopping power range. As a result of the heavy ion irradiation (U, Kr, Au), the hardness was observed to diminish and saturate after a decrease by 35 ± 1%. Unlike slow and swift heavy ion irradiation, irradiation with light ions (He,O) induced a saturation hardness decrease of 18 ± 1% only. During double ion beam irradiation; where glasses were first irradiated with a heavy ion (gold) and then by a light ion (helium), the light ion irradiation induced partial damage recovery. As a consequence of the recovery effect, the hardness of the pre-irradiated glasses increased by 10–15% depending on the chemical composition. These results highlight that the nuclear energy loss and high electronic energy loss (≥4 keV/nm) result in significant and similar modifications whereas light ions with low electronic energy loss (≤1 keV/nm) result in only mild damage formation in virgin glasses and recovery in highly pre-damaged glasses. These results are important to understand the damage formation and recovery in actinide bearing minerals and in glasses subjected to self-irradiation by alpha decays. - Highlights: • Behavior of glasses strongly depends on the electronic energy loss (Se) of the ions. • High Se (≥4 keV/nm) induces large changes in comparison to lower Se values. • Apart from mild damage formation, low Se causes recovery of pre-existing damage. • Alpha induced partial recovery of the damage would occur in nuclear waste glasses.

  10. Irradiation induced creep in graphite with respect to the flux effect and the high fluence behaviour

    International Nuclear Information System (INIS)

    Cundy, M.R.

    1984-01-01

    In accelerated irradiation creep tests, performed in the HFR Petten, in a fast neutron flux of about 2x10 4 cm -2 s -1 and at temperatures of 300 and 500 0 C, a fast neutron fluence in excess of 20x10 21 cm -2 (EDN) has been attained so far. As a supplement to this, an analogous creep test was conducted in a fast neutron flux lower by a factor of four which is more typical for the service conditions in a HTR, with a maximum fast fluence of only 4x10 21 cm -2 (EDN). This experiment was aimed at answering the question if, for equal fast fluence, enhanced irradiation creep and Wigner dimensional change would take place in a reduced fast neutron flux. This problem has more generally been addressed to as the ''flux effect'' or the ''equivalent temperature concept''. (orig./IHOE)

  11. Ion irradiation enhanced crystal nucleation in amorphous Si thin films

    International Nuclear Information System (INIS)

    Im, J.S.; Atwater, H.A.

    1990-01-01

    The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe + irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500--580 degree C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV

  12. Physico-chemical changes in heavy ions irradiated polymer foils by differential scanning calorimetry

    International Nuclear Information System (INIS)

    Ciesla, K.; Trautmann, Ch.; Vansant, E.F.

    1994-01-01

    The sample of commercial PETP (Hostaphan) and very heavy ions irradiated products were investigated by differential scanning calorimetry in nitrogen flow. Irradiation were performed with Dy ions of 13 MeV/u with fluences 5 x 10 10 ions/cm 2 . Differences were observed in melting behaviour of unirradiated and irradiated foils. The influence of irradiation conditions on the results was noticed. Moreover the samples of polyimide (Kapton) and polycarbonate (Macrofol) irradiated in similar conditions were examined by DSC. The DSC traces have been compared with those of unirradiated reference samples. (author). 8 refs, 5 figs

  13. Photoinduced currents in pristine and ion irradiated kapton-H polyimide

    Science.gov (United States)

    Sharma, Anu; Sridharbabu, Y.; Quamara, J. K.

    2014-10-01

    The photoinduced currents in pristine and ion irradiated kapton-H polyimide have been investigated for different applied electric fields at 200°C. Particularly the effect of illumination intensity on the maximum current obtained as a result of photoinduced polarization has been studied. Samples were irradiated by using PELLETRON facility, IUAC, New Delhi. The photo-carrier charge generation depends directly on intensity of illumination. The samples irradiated at higher fluence show a decrease in the peak current with intensity of illumination. The secondary radiation induced crystallinity (SRIC) is responsible for the increase in maximum photoinduced currents generated with intensity of illumination.

  14. Photoinduced currents in pristine and ion irradiated kapton-H polyimide

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Anu, E-mail: sharmaanu81@gmail.com; Sridharbabu, Y., E-mail: sharmaanu81@gmail.com; Quamara, J. K., E-mail: sharmaanu81@gmail.com [Physics Department, SGTB Khalsa college, Delhi University, Delhi (India); Department of Physics, National Institute of Technology, Kurukshetra-136119 (India); Echelon Group of Institutions, Faridabad (India)

    2014-10-15

    The photoinduced currents in pristine and ion irradiated kapton-H polyimide have been investigated for different applied electric fields at 200°C. Particularly the effect of illumination intensity on the maximum current obtained as a result of photoinduced polarization has been studied. Samples were irradiated by using PELLETRON facility, IUAC, New Delhi. The photo-carrier charge generation depends directly on intensity of illumination. The samples irradiated at higher fluence show a decrease in the peak current with intensity of illumination. The secondary radiation induced crystallinity (SRIC) is responsible for the increase in maximum photoinduced currents generated with intensity of illumination.

  15. Single-ion irradiation: physics, technology and applications

    International Nuclear Information System (INIS)

    Ohdomari, Iwao

    2008-01-01

    Among the various radiation effects which involve the study of radiation environments, responses of materials and devices to radiation, radiation testing and radiation hardening of devices and equipment, this review mainly considers the radiation effects induced by alpha particles and other ions used in semiconductor technology on Si crystals and Si devices. We first describe the single-ion microprobe that enables the study of the site dependence of radiation hardness in a semiconductor device. Next, we describe single-ion implantation as a tool for suppressing fluctuation in device function induced by the discrete number and random position of dopant atoms. Finally, we describe the common features associated with both 'probing' and 'modification' in terms of the nature and behaviour of defect clusters induced by single-ion irradiation. A special feature of the review is that the radiation effects discussed here are induced by 'single' particles, and not by particle beams. Although there is a great amount of accumulated data on radiation effects, they are discussed in the conventional terms of 'dose' or 'fluence,' whose unit is cm -2 . Therefore, this review provides complementary information on radiation effects. (topical review)

  16. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    International Nuclear Information System (INIS)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G.B.V.S.; Avasthi, D.K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-01-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO_2 and NH_3 gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10"1"3 ions/cm"2). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic

  17. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, Priya Darshni, E-mail: kaushik.priyadarshni@gmail.com [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Ivanov, Ivan G.; Lin, Pin-Cheng [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Kaur, Gurpreet [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Eriksson, Jens [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Lakshmi, G.B.V.S. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Amity Institute of Nanotechnology, Noida 201313 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Aziz, Anver; Siddiqui, Azher M. [Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Syväjärvi, Mikael [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Yazdi, G. Reza, E-mail: yazdi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2017-05-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO{sub 2} and NH{sub 3} gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10{sup 13} ions/cm{sup 2}). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and

  18. Atomic mixing effects on high fluence Ge implantation into Si at 40 keV

    International Nuclear Information System (INIS)

    Gras-Marti, A.; Jimenez-Rodriguez, J.J.; Peon-Fernandez, J.; Rodriguez-Vidal, M.; Tognetti, N.P.; Carter, G.; Nobes, M.J.; Armour, D.G.

    1982-01-01

    Ion implanted profiles of 40 keV Ge + into Si at fluences ranging from approx. equal to 10 15 ions/cm 2 up to saturation have been measured using the RBS technique. The profiles compare well with the predictions of an analytical model encompasing sputter erosion plus atomic relocation. (orig.)

  19. High-accuracy fluence determination in ion beams using fluorescent nuclear track detectors

    DEFF Research Database (Denmark)

    Osinga, J.-M.; Akselrod, M.S.; Herrmann, Rochus

    2013-01-01

    We present an approach to use Al2O3:C,Mg-based fluorescent nuclear track detectors (FNTDs) and confocal laser scanning microscopy as a semiautomatic tool for fluence measurements in clinical ion beams. The method was found to cover a linear energy transfer (LET) range from at least L∞(Al2O3) = 0...

  20. AFM studies on heavy ion irradiated YBCO single crystals

    International Nuclear Information System (INIS)

    Lakhani, Archana; Marhas, M.K.; Saravanan, P.; Ganesan, V.; Srinivasan, R.; Kanjilal, D.; Mehta, G.K.; Elizabeth, Suja; Bhat, H.L.

    2000-01-01

    Atomic Force Microscopy (AFM) is extensively used to characterise the surface morphology of high energy ion irradiated single crystals of high temperature superconductor - YBCO. Our earlier systematic studies on thin films of YBCO under high energy and heavy ion irradiation shows clear evidence of ion induced sputtering or erosion, even though the effect is more on the grain boundaries. These earlier results were supported by electrical resistance measurements. In order to understand more clearly, the nature of surface modification at these high energies, AFM studies were carried out on single crystals of YBCO. Single crystals were chosen in order to see the effect on crystallites alone without interference from grain boundaries. 200 MeV gold ions were used for investigation using the facilities available at Nuclear Science Centre, New Delhi. The type of ion and the range of energies were chosen to meet the threshold for electronically mediated defect production. The results are in conformity with our earlier studies and will be described in detail in the context of electronic energy loss mediated sputtering or erosion. (author)

  1. Damage nucleation in Si during ion irradiation

    International Nuclear Information System (INIS)

    Holland, O.W.; Fathy, D.; Narayan, J.

    1984-01-01

    Damage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects and their mass dependence on nucleation mechanisms is discussed

  2. Effect of swift heavy ion irradiation on ethylene–chlorotrifluoroethylene copolymer

    International Nuclear Information System (INIS)

    Singh, Lakhwant; Devgan, Kusum; Samra, Kawaljeet Singh

    2012-01-01

    The swift heavy irradiation induced changes taking place in ethylene–chlorotrifluoroethylene (E–CTFE) copolymer films were investigated in correlation with the applied doses. Samples were irradiated in vacuum at room temperature by lithium (50 MeV), carbon (85 MeV), nickel (120 MeV) and silver (120 MeV) ions with the fluence in the range of 1×10 11 –3×10 12 ions cm −2 . Structural and thermal properties of the irradiated as well as pristine E–CTFE films were studied using FTIR, UV–visible, TGA, DSC and XRD techniques. Swift heavy ion irradiation was found to induce changes in E–CTFE depending upon the applied doses. - Highlights: ► Effect of swift heavy ion irradiation on E–CTFE films has been studied. ► Different structural changes in the original structure of E–CTFE are observed after irradiation with different ions. ► Swift heavy ion irradiation has made E–CTFE more prone to thermal degradation.

  3. Structural modifications of swift heavy ion irradiated PEN probed by optical and thermal measurements

    International Nuclear Information System (INIS)

    Devgan, Kusum; Singh, Lakhwant; Samra, Kawaljeet Singh

    2013-01-01

    Highlights: • The present paper reports the effect of swift heavy ion irradiation on Polyethylene Naphthalate (PEN). • Swift heavy ion irradiation introduces structural modification and degradation of PEN at different doses. • Lower irradiation doses in PEN result in modification of structural properties and higher doses lead to complete degradation. • Strong correlation between structural, optical, and thermal properties. - Abstract: The effects of swift heavy ion irradiation on the structural characteristics of Polyethylene naphthalate (PEN) were studied. Samples were irradiated in vacuum at room temperature by lithium (50 MeV), carbon (85 MeV), nickel (120 MeV) and silver (120 MeV) ions with the fluence in the range of 1×10 11 –3×10 12 ions cm −2 . Ion induced changes were analyzed using X-ray diffraction (XRD), Fourier transform infra red (FT-IR), UV–visible spectroscopy, thermo-gravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Cross-linking was observed at lower doses resulting in modification of structural properties, however higher doses lead to the degradation of the investigated polymeric samples

  4. In situ and postradiation analysis of mechanical stress in Al2O3:Cr induced by swift heavy-ion irradiation

    International Nuclear Information System (INIS)

    Skuratov, V.A.; Bujnarowski, G.; Kovalev, Yu.S.; O'Connell, J.; Havanscak, K.

    2010-01-01

    Optical spectroscopy and TEM techniques have been applied to study the radiation damage and correlated mechanical stresses in Al 2 O 3 and Al 2 O 3 :Cr single crystals induced by (1-3) MeV/amu Kr, Xe and Bi ion irradiation. Mechanical stresses were evaluated in situ using a piezospectroscopic effect through the shift of the respective lines in ionoluminescence spectra. It was found that dose dependence of the stress level for Xe and Bi ions, when ionization energy loss exceeds the threshold of damage formation via electronic excitations, exhibits several alternate stages showing the build-up and relaxation of stresses. The beginning of relaxation stages is observed at fluences associated with beginning of individual ion track regions overlapping. The residual stress profiles through the ion irradiated layers were deduced from depth-resolved photostimulated spectra using laser confocal scanning microscopy set-up. It was determined that stresses are compressive in basal plane and tensile in perpendicular direction in all samples irradiated with high energy ions.

  5. In situ and postradiation analysis of mechanical stress in Al{sub 2}O{sub 3}:Cr induced by swift heavy-ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Skuratov, V.A., E-mail: skuratov@jinr.r [Joint Institute for Nuclear Research, Dubna 141980 (Russian Federation); Bujnarowski, G. [Institute of Physics, Opole University, 45-052 Opole (Poland); Kovalev, Yu.S. [Joint Institute for Nuclear Research, Dubna 141980 (Russian Federation); O' Connell, J. [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Havanscak, K. [Eoetvoes University, Pazmany P. setany 1/A, H-1117 Budapest (Hungary)

    2010-10-01

    Optical spectroscopy and TEM techniques have been applied to study the radiation damage and correlated mechanical stresses in Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}:Cr single crystals induced by (1-3) MeV/amu Kr, Xe and Bi ion irradiation. Mechanical stresses were evaluated in situ using a piezospectroscopic effect through the shift of the respective lines in ionoluminescence spectra. It was found that dose dependence of the stress level for Xe and Bi ions, when ionization energy loss exceeds the threshold of damage formation via electronic excitations, exhibits several alternate stages showing the build-up and relaxation of stresses. The beginning of relaxation stages is observed at fluences associated with beginning of individual ion track regions overlapping. The residual stress profiles through the ion irradiated layers were deduced from depth-resolved photostimulated spectra using laser confocal scanning microscopy set-up. It was determined that stresses are compressive in basal plane and tensile in perpendicular direction in all samples irradiated with high energy ions.

  6. Development of a simple, low cost, indirect ion beam fluence measurement system for ion implanters, accelerators

    Science.gov (United States)

    Suresh, K.; Balaji, S.; Saravanan, K.; Navas, J.; David, C.; Panigrahi, B. K.

    2018-02-01

    We developed a simple, low cost user-friendly automated indirect ion beam fluence measurement system for ion irradiation and analysis experiments requiring indirect beam fluence measurements unperturbed by sample conditions like low temperature, high temperature, sample biasing as well as in regular ion implantation experiments in the ion implanters and electrostatic accelerators with continuous beam. The system, which uses simple, low cost, off-the-shelf components/systems and two distinct layers of in-house built softwarenot only eliminates the need for costly data acquisition systems but also overcomes difficulties in using properietry software. The hardware of the system is centered around a personal computer, a PIC16F887 based embedded system, a Faraday cup drive cum monitor circuit, a pair of Faraday Cups and a beam current integrator and the in-house developed software include C based microcontroller firmware and LABVIEW based virtual instrument automation software. The automatic fluence measurement involves two important phases, a current sampling phase lasting over 20-30 seconds during which the ion beam current is continuously measured by intercepting the ion beam and the averaged beam current value is computed. A subsequent charge computation phase lasting 700-900 seconds is executed making the ion beam to irradiate the samples and the incremental fluence received by the sampleis estimated usingthe latest averaged beam current value from the ion beam current sampling phase. The cycle of current sampling-charge computation is repeated till the required fluence is reached. Besides simplicity and cost-effectiveness, other important advantages of the developed system include easy reconfiguration of the system to suit customisation of experiments, scalability, easy debug and maintenance of the hardware/software, ability to work as a standalone system. The system was tested with different set of samples and ion fluences and the results were verified using

  7. Top-gated field-effect LaAlO{sub 3}/SrTiO{sub 3} devices made by ion-irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hurand, S.; Jouan, A.; Feuillet-Palma, C.; Singh, G.; Malnou, M.; Lesueur, J.; Bergeal, N. [Laboratoire de Physique et d' Etude des Matériaux-CNRS-ESPCI ParisTech-UPMC, PSL Research University, 10 Rue Vauquelin - 75005 Paris (France); Lesne, E.; Reyren, N.; Barthélémy, A.; Bibes, M.; Villegas, J. E. [Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France); Ulysse, C. [Laboratoire de Photonique et de Nanostructures LPN-CNRS, Route de Nozay, 91460 Marcoussis and Universit Paris Sud, 91405 Orsay (France); Pannetier-Lecoeur, M. [DSM/IRAMIS/SPEC - CNRS UMR 3680, CEA Saclay, F-91191 Gif-sur-Yvette Cedex (France)

    2016-02-01

    We present a method to fabricate top-gated field-effect devices in a LaAlO{sub 3}/SrTiO{sub 3} two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting T{sub c} can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for a strong depletion of the 2-DEG.

  8. Helium accumulation and bubble formation in FeCoNiCr alloy under high fluence He+ implantation

    Science.gov (United States)

    Chen, Da; Tong, Y.; Li, H.; Wang, J.; Zhao, Y. L.; Hu, Alice; Kai, J. J.

    2018-04-01

    Face-centered cubic (FCC) high-entropy alloys (HEA), as emerging alloys with equal-molar or near equal-molar constituents, show a promising radiation damage resistance under heavy ion bombardment, making them potential for structural material application in next-generation nuclear reactors, but the accumulation of light helium ions, a product of nuclear fission reaction, has not been studied. The present work experimentally studied the helium accumulation and bubble formation at implantation temperatures of 523 K, 573 K and 673 K in a homogenized FCC FeCoNiCr HEA, a HEA showing excellent radiation damage resistance under heavy ion irradiation. The size and population density of helium bubbles in FeCoNiCr samples were quantitatively analyzed through transmission electron microscopy (TEM), and the helium content existing in bubbles were estimated from a high-pressure Equation of State (EOS). We found that the helium diffusion in such condition was dominated by the self-interstitial/He replacement mechanism, and the corresponding activation energy in FeCoNiCr is comparable with the vacancy migration energy in Ni and austenitic stainless steel but only 14.3%, 31.4% and 51.4% of the accumulated helium precipitated into helium bubbles at 523 K, 573 K and 673 K, respectively, smaller than the pure Ni case. Importantly, the small bubble size suggested that FeCoNiCr HEA has a high resistance of helium bubble formation compared with Ni and steels.

  9. 130 MeV Au ion irradiation induced dewetting on In2Te3 thin film

    International Nuclear Information System (INIS)

    Matheswaran, P.; Abhirami, K.M.; Gokul, B.; Sathyamoorthy, R.; Prakash, Jai; Asokan, K.; Kanjilal, D.

    2012-01-01

    Highlights: ► In 2 Te 3 phase formed from In/Te bilayer by 130 MeV Au ion irradiation. ► Lower fluence results mixed phases with initial state of dewetting. ► At higher fluence, In 2 Te 3 phase with complete dewetting pattern is formed. ► Thermal spike model is used to explain the inter face mixing phenomena. ► SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 × 10 13 ions/cm 2 . At the higher fluence of 3 × 10 13 ions/cm 2 , dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

  10. Effect of ion irradiation on the surface, structural and mechanical properties of brass

    Science.gov (United States)

    Ahmad, Shahbaz; Bashir, Shazia; Ali, Nisar; Umm-i-Kalsoom; Yousaf, Daniel; Faizan-ul-Haq; Naeem, Athar; Ahmad, Riaz; Khlaeeq-ur-Rahman, M.

    2014-04-01

    Modifications to the surface, structural and mechanical properties of brass after ion irradiation have been investigated. Brass targets were bombarded by carbon ions of 2 MeV energy from a Pelletron linear accelerator for various fluences ranging from 56 × 1012 to 26 × 1013 ions/cm2. A scanning electron microscope and X-ray diffractometer were utilized to analyze the surface morphology and crystallographic structure respectively. To explore the mechanical properties e.g., yield stress, ultimate tensile strength and microhardness of irradiated brass, an universal tensile testing machine and Vickers microhardness tester were used. Scanning electron microscopy results revealed an irregular and randomly distributed sputter morphology for a lower ion fluence. With increasing ion fluence, the incoherently shaped structures were transformed into dendritic structures. Nano/micro sized craters and voids, along with the appearance of pits, were observed at the maximum ion fluence. From X-ray diffraction results, no new phases were observed to be formed in the brass upon irradiation. However, a change in the peak intensity and higher and lower angle shifting were observed, which represents the generation of ion-induced defects and stresses. Analyses confirmed modifications in the mechanical properties of irradiated brass. The yield stress, ultimate tensile strength and hardness initially decreased and then increased with increasing ion fluence. The changes in the mechanical properties of irradiated brass are well correlated with surface and crystallographic modifications and are attributed to the generation, augmentation, recombination and annihilation of the ion-induced defects.

  11. Evaluation of Ion Irradiation Behavior of ODS Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jin Sung; Kim, Min Chul; Hong, Jun Hwa; Han, Chang Hee; Chang, Young Mun; Bae, Chang Soo; Bae, Yoon Young; Chang, Moon Hee

    2006-08-15

    FM steel (Grade 92) and ODS alloy(MA956) specimens were ion irradiated with 122 MeV Ne ions. Irradiation temperatures were about 450 and 550 .deg. C and the peak dose was 1, 5, and 10 dpa. Cross-sectional TEM samples were prepared by the electrolytic Ni-plating after pre-treatment of the irradiated specimens. Irradiation cavities in FM steel and ODS alloy specimens were not much different in size; about 20 nm in diameter in both specimens irradiated at around 450 .deg. C. However, the size distribution of cavities in FM steel specimens was broader than that in ODS alloy specimen, indicating that the cavity growth probably via coalescence). It was noticeable that the location and the preferential growth of the cavities in FM steel specimens: cavities on the PAGB (prior austenite grain boundary) was significantly larger than those within the grains. This could be an important issue for the mechanical properties, especially high temperature creep, fracture toughness, and so on. The dependency of the dose threshold and swelling on the ratio of the inert gas concentration/dpa was analysed for the various irradiation source, including He, Ne, Fe/He, and fast neutron, and the empirical correlation was established.

  12. Evaluation of Ion Irradiation Behavior of ODS Alloys

    International Nuclear Information System (INIS)

    Jang, Jin Sung; Kim, Min Chul; Hong, Jun Hwa; Han, Chang Hee; Chang, Young Mun; Bae, Chang Soo; Bae, Yoon Young; Chang, Moon Hee

    2006-08-01

    FM steel (Grade 92) and ODS alloy(MA956) specimens were ion irradiated with 122 MeV Ne ions. Irradiation temperatures were about 450 and 550 .deg. C and the peak dose was 1, 5, and 10 dpa. Cross-sectional TEM samples were prepared by the electrolytic Ni-plating after pre-treatment of the irradiated specimens. Irradiation cavities in FM steel and ODS alloy specimens were not much different in size; about 20 nm in diameter in both specimens irradiated at around 450 .deg. C. However, the size distribution of cavities in FM steel specimens was broader than that in ODS alloy specimen, indicating that the cavity growth probably via coalescence). It was noticeable that the location and the preferential growth of the cavities in FM steel specimens: cavities on the PAGB (prior austenite grain boundary) was significantly larger than those within the grains. This could be an important issue for the mechanical properties, especially high temperature creep, fracture toughness, and so on. The dependency of the dose threshold and swelling on the ratio of the inert gas concentration/dpa was analysed for the various irradiation source, including He, Ne, Fe/He, and fast neutron, and the empirical correlation was established

  13. Shift of localized surface plasmon resonance by Ar-ion irradiation of Ag–Au bimetallic films deposited on Al{sub 2}O{sub 3} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Xuan [Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628 (Japan); Shibayama, Tamaki, E-mail: shiba@qe.eng.hokudai.ac.jp [Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Kita-13, Nishi-8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan); Yu, Ruixuan; Takayanagi, Shinya [Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628 (Japan); Watanabe, Seiichi [Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Kita-13, Nishi-8, Kita-ku, Sapporo, Hokkaido 060-8628 (Japan)

    2013-11-01

    Effects of Ar-ion induced surface nanostructuring were studied using 100 keV Ar-ion irradiation of 30 nm Ag–Au bimetallic films deposited on Al{sub 2}O{sub 3} single crystals, under irradiation fluences ranging from 5.0 × 10{sup 15} cm{sup −2} to 6.3 × 10{sup 16} cm{sup −2}. Scanning electron microscope was used to study the ion-beam-induced surface nanostructuring. As the irradiation fluence increased, dewetting of the bimetallic films on the Al{sub 2}O{sub 3} substrate was observed, and formation of isolated Ag–Au nanostructures sustained on the substrate were obtained. Next, thermal annealing was performed under high vacuum at 1073 K for 2 h; a layer of photosensitive Ag–Au alloy nanoballs partially embedded in the Al{sub 2}O{sub 3} substrate was obtained when higher fluence irradiation (>3.8 × 10{sup 16} cm{sup −2}) was used. The microstructures of the nanoballs were investigated using a transmission electron microscope, and the nanoballs were found to be single crystals with a FCC structure. In addition, photoabsorption spectra were measured, and localized surface plasmon resonance peaks were observed. With increase in the irradiation fluence, the size of the Ag–Au nanoballs on the substrate decreased, and a blue-shift of the LSPR peaks was observed. Further control of the LSPR frequency over a wide range was achieved by modifying the chemical components, and a red-shift of the LSPR peaks was observed as the Au concentration increased. In summary, ion irradiation is an effective approach toward surface nanostructuring, and the nanocomposites obtained have potential applications in optical devices.

  14. Ion irradiation-induced diffusion in bixbyite-fluorite related oxides: Dislocations and phase transformation

    Energy Technology Data Exchange (ETDEWEB)

    Rolly, Gaboriaud, E-mail: Rolly.gaboriaud@univ-poitiers.fr [Institut Pprime, CNRS-University of Poitiers, SP2MI-BP 30179, 86962 Chasseneuil-Futuroscope (France); Fabien, Paumier [Institut Pprime, CNRS-University of Poitiers, SP2MI-BP 30179, 86962 Chasseneuil-Futuroscope (France); Bertrand, Lacroix [CSIC – University of Sevilla, Avenida Américo Vespucio, 49, 41092 Sevilla (Spain)

    2014-05-01

    Ion-irradiation induced diffusion and the phase transformation of a bixbyite-fluorite related rare earth oxide thin films are studied. This work is focused on yttrium sesquioxide, Y{sub 2}O{sub 3}, thin films deposited on Si (1 0 0) substrates using the ion beam sputtering technique (IBS). As-deposited samples were annealed ant then irradiated at cryogenic temperature (80 K) with 260 keV Xe{sup 2+} at different fluences. The irradiated thin oxide films are characterized by X-ray diffraction. A cubic to monoclinic phase transformation was observed. Analysis of this phenomenon is done in terms of residual stresses. Stress measurements as a function of irradiation fluences were realised using the XRD-sin{sup 2}ψ method. Stress evolution and kinetic of the phase transformation are compared and leads to the role-played by the nucleation of point and extended defects.

  15. Measurement and protection of the oxidative damage induced by high-LET carbon-ion irradiation in salmon sperm DNA solution

    International Nuclear Information System (INIS)

    Moritake, T.; Nose, T.; Tsuboi, K.; Anzai, K.; Ikota, N.; Ozawa, T.; Ando, K.

    2003-01-01

    The aims of this study are to quantify the yield of hydroxyl radicals (OH) , and to evaluate the oxidative damage on DNA after high-linear energy transfer (LET) carbon-ion beams and x-rays. For this purpose, the relationship between the radiolytic yield of OH in aqueous solution and 8-hydroxydeoxyguanosine (8-OHdG) level in DNA solution were assessed after radiation. In addition, the anti-oxidative effect of 3-methyl-1-phenyl-2-pyrazonline-5-one (edaravone) on DNA was evaluated. Culture medium containing 200 mM 5,5-dimethyl-1-pyrroline-N-oxide (DMPO) was irradiated with doses of 0 to 20 Gy with an LET of 20 to 90 keV/μm, and the yields of OH were measured using an electron spin resonance (ESR) spectrometer. Salmon sperm DNA solution at a concentration of 1.0 mg/ml was irradiated with 10 Gy of x-rays or 290 MeV/nucleon carbon-ion beams with an LET range of 20-80 keV/μm. 8-OHdG levels in the DNA solution were measured by HPLC with an electrochemical detector (ECD) after each irradiation. Edaravone was added to the DNA solution in final concentrations of 10 μM to 1 mM and 8-OHdG levels were measured by the same method after irradiation. The yield of OH by carbon-ion radiolysis increased in proportion to the absorbed dose over the range of 0 to 20 Gy, and the yield of OH decreased as LET increased logarithmically from 20 to 90 keV/μm. The level of 8-OHdG increased dose-dependently after x-ray irradiation, and it was significantly suppressed by edaravone. Furthermore, the yield of 8-OHdG and the protection efficiency by edaravone decreased as LET value increased. These unique findings provide further understanding of the indirect effect of high-LET radiation, and chemical protection of oxidative damage on DNA is important for clinical application of high-LET radiation

  16. Measurement and protection of the oxidative damage induced by high-LET carbon-ion irradiation in salmon sperm DNA solution

    Energy Technology Data Exchange (ETDEWEB)

    Moritake, T; Nose, T [University of Tsukuba, (Japan); Tsuboi, K [Institute of Clinical Medical Center, (Japan); Anzai, K; Ikota, N [National Institute of Radiological Sciences, (Japan); Ozawa, T [Redox Regulation Research Group, (Japan); Ando, K [Research Center of Charged Particle Therapy, (Japan). National Institution

    2003-07-01

    The aims of this study are to quantify the yield of hydroxyl radicals (OH) , and to evaluate the oxidative damage on DNA after high-linear energy transfer (LET) carbon-ion beams and x-rays. For this purpose, the relationship between the radiolytic yield of OH in aqueous solution and 8-hydroxydeoxyguanosine (8-OHdG) level in DNA solution were assessed after radiation. In addition, the anti-oxidative effect of 3-methyl-1-phenyl-2-pyrazonline-5-one (edaravone) on DNA was evaluated. Culture medium containing 200 mM 5,5-dimethyl-1-pyrroline-N-oxide (DMPO) was irradiated with doses of 0 to 20 Gy with an LET of 20 to 90 keV/{mu}m, and the yields of OH were measured using an electron spin resonance (ESR) spectrometer. Salmon sperm DNA solution at a concentration of 1.0 mg/ml was irradiated with 10 Gy of x-rays or 290 MeV/nucleon carbon-ion beams with an LET range of 20-80 keV/{mu}m. 8-OHdG levels in the DNA solution were measured by HPLC with an electrochemical detector (ECD) after each irradiation. Edaravone was added to the DNA solution in final concentrations of 10 {mu}M to 1 mM and 8-OHdG levels were measured by the same method after irradiation. The yield of OH by carbon-ion radiolysis increased in proportion to the absorbed dose over the range of 0 to 20 Gy, and the yield of OH decreased as LET increased logarithmically from 20 to 90 keV/{mu}m. The level of 8-OHdG increased dose-dependently after x-ray irradiation, and it was significantly suppressed by edaravone. Furthermore, the yield of 8-OHdG and the protection efficiency by edaravone decreased as LET value increased. These unique findings provide further understanding of the indirect effect of high-LET radiation, and chemical protection of oxidative damage on DNA is important for clinical application of high-LET radiation.

  17. Characteristic effects of heavy ion irradiation on the rat brain

    International Nuclear Information System (INIS)

    Sun, X.Z.; Takahashi, S.; Kubota, Y.; Yoshida, S.; Takeda, H.; Zhang, R.; Fukui, Y.

    2005-01-01

    Heavy ion irradiation has the feature to administer a large radiation dose in the vicinity of the endpoint in the beam range, and its irradiation system and biophysical characteristics are different from ordinary irradiation instruments like X- or gamma-rays. Using this special feature, heavy ion irradiation has been applied for cancer treatment. The safety and efficacy of heavy ion irradiator have been demonstrated to a great extent. For instance, brain tumors treated by heavy-ion beams became smaller or disappearance. However, fundamental research related to such clinical phenotypes and their underlying mechanisms are little known. In order to clarify characteristic effects of heavy ion irradiation on the brain, we developed an experimental system for irradiating a restricted region of the rat brain using heavy ion beams. The characteristics of the heavy ion beams, histological, behavioral and elemental changes were studied in the rat following heavy ion irradiation. Adult male Sprague-Dawley rats, aged 12 weeks and weighing 260-340 g (Shizuoka Laboratory Animal Center, Hamamatsu, Japan) were used. Rats were deeply anesthetized 10-15 minutes before irradiation with ketamine (40 mg/kg) and xylazine (10 mg/kg), immobilized in a specifically designed jig, and irradiated with 290 MeV/nucleon charged carbon beams in a dorsal-to ventral direction, The left cerebral hemispheres of the brain were irradiated at doses of 100 Gy charged carbon particles. The depth-dose distribution of the heavy ion beams was modified to make a spread-out bragg peak of 5 mm wide with a range modulator. The characteristics of the heavy-ion beams (field and depth of the heavy-ion beams) were examined by a measuring paraffin section of rat brain at different thickness. That extensive necrosis was observed between 2.5 mm and 7.5 mm depth from the surface of the rat head, suggesting a relatively high dose and uniform dose was delivered among designed depths and the spread-out bragg peak used here

  18. Revealing ionization-induced dynamic recovery in ion-irradiated SrTiO3

    Energy Technology Data Exchange (ETDEWEB)

    Velisa, Gihan [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Wendler, Elke [Friedrich Schiller Univ., Jena (Germany). Institut fur Festkorperphysik; Xue, Haizhou [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science & Engineering; Zhang, Yanwen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science & Engineering; Weber, William J. [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science & Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

    2018-03-02

    The lack of fundamental understanding on the coupled effects of energy deposition to electrons and atomic nuclei on defect processes and irradiation response poses a significant roadblock for the design and control of material properties. In this work, SrTiO3 has been irradiated with various ion species over a wide range of ion fluences at room temperature with a goal to deposit different amounts of energy to target electrons and atomic nuclei by varying the ratio of electronic to nuclear energy loss. Here, the results unambiguously show a dramatic difference in behavior of SrTiO3 irradiated with light ions (Ne, O) compared to heavy ions (Ar). While the damage accumulation and amorphization under Ar ion irradiation are consistent with previous observations and existing models, the damage accumulation under Ne irradiation reveals a quasi-saturation state at a fractional disorder of 0.54 at the damage peak for an ion fluence corresponding to a dose of 0.5 dpa; this is followed by further increases in disorder with increasing ion fluence. In the case of O ion irradiation, the damage accumulation at the damage peak closely follows that for Ne ion irradiation up to a fluence corresponding to a dose of 0.5 dpa, where a quasi-saturation of fractional disorder level occurs at about 0.48; however, in this case, the disorder at the damage peak decreases slightly with further increases in fluence. This behavior is associated with changes in kinetics due to irradiation-enhanced diffusional processes that are dependent on electronic energy loss and the ratio of electronic to nuclear energy dissipation. Lastly, these findings are critical for advancing the fundamental understanding of ion-solid interactions and for a large number of applications in oxide electronics where SrTiO3 is a foundational material.

  19. Bystander effect in human hepatoma HepG2 cells caused by medium transfers at different times after high-LET carbon ion irradiation

    International Nuclear Information System (INIS)

    Wu Qingfeng; Li Qiang; Jin Xiaodong; Liu Xinguo; Dai Zhongying

    2011-01-01

    Although radiation-induced bystander effects have been well documented in a variety of biological systems, whether irradiated cells have the ability to generate bystander signaling persistently is still unclear and the clinical relevance of bystander effects in radiotherapy remains to be elucidated. This study examines tumor cellular bystander response to autologous medium from cell culture irradiated with high-linear energy transfer (LET) heavy ions at a therapeutically relevant dose in terms of clonogenic cell survival. In vitro experiments were performed using human hepatoma HepG2 cell line exposed to 100 keV/μm carbon ions at a dose of 2 Gy. Two different periods (2 and 12 h) after irradiation, irradiated cell conditioned medium (ICCM) and replenished fresh medium were harvested and then transferred to unirradiated bystander cells. Cellular bystander responses were measured with the different medium transfer protocols. Significant higher survival fractions of unirradiated cells receiving the media from the irradiated cultures at the different times post-irradiation than those of the control were observed. Even replenishing fresh medium for unirradiated cells which had been exposed to the ICCM for 12 h could not prevent the bystander cells from the increased survival fraction. These results suggest that the irradiated cells could release unidentified signal factor(s), which induced the increase in survival fraction for the unirradiated bystander cells, into the media sustainedly and the carbon ions triggered a cascade of signaling events in the irradiated cells rather than secreting the soluble signal factor(s) just at a short period after irradiation. Based on the observations in this study, the importance of bystander effect in clinical radiotherapy was discussed and incorporating the bystander effect into the current radiobiological models, which are applicable to heavy ion radiotherapy, is needed urgently.

  20. Microstructural and microchemical evolution in vanadium alloys by heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Sekimura, Naoto; Kakiuchi, Hironori; Shirao, Yasuyuki; Iwai, Takeo [Tokyo Univ. (Japan)

    1996-10-01

    Microstructural and microchemical evolution in vanadium alloys were investigated using heavy ion irradiation. No cavities were observed in V-5Cr-5Ti alloys irradiated to 30 dpa at 520 and 600degC. Energy dispersive X-ray spectroscopy analyses showed that Ti peaks around grain boundaries. Segregation of Cr atoms was not clearly detected. Co-implanted helium was also found to enhance dislocation evolution in V-5Cr-5Ti. High density of matrix cavities were observed in V-5Fe alloys irradiated with dual ions, whereas cavities were formed only around grain boundaries in single ion irradiated V-5Fe. (author)

  1. Color center annealing and ageing in electron and ion-irradiated yttria-stabilized zirconia

    International Nuclear Information System (INIS)

    Costantini, Jean-Marc; Beuneu, Francois

    2005-01-01

    We have used X-band electron paramagnetic resonance (EPR) measurements at room-temperature (RT) to study the thermal annealing and RT ageing of color centers induced in yttria-stabilized zirconia (YSZ), i.e. ZrO 2 :Y with 9.5 mol% Y 2 O 3 , by swift electron and ion-irradiations. YSZ single crystals with the orientation were irradiated with 2.5 MeV electrons, and implanted with 100 MeV 13 C ions. Electron and ion beams produce the same two color centers, namely an F + -type center (singly ionized oxygen vacancy) and the so-called T-center (Zr 3+ in a trigonal oxygen local environment) which is also produced by X-ray irradiations. Isochronal annealing was performed in air up to 973 K. For both electron and ion irradiations, the defect densities are plotted versus temperature or time at various fluences. The influence of a thermal treatment at 1373 K of the YSZ single crystals under vacuum prior to the irradiations was also investigated. In these reduced samples, color centers are found to be more stable than in as-received samples. Two kinds of recovery processes are observed depending on fluence and heat treatment

  2. Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hu, P.P. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Liu, J., E-mail: J.Liu@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Zhang, S.X. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Maaz, K. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Nanomaterials Research Group, Physics Division, PINSTECH, Nilore, 45650 Islamabad (Pakistan); Zeng, J. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); Guo, H. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China); University of Chinese Academy of Sciences (UCAS), Beijing 100049 (China); Zhai, P.F.; Duan, J.L.; Sun, Y.M.; Hou, M.D. [Institute of Modern Physics, Chinese Academy of Sciences (CAS), Lanzhou 730000 (China)

    2016-04-01

    InP crystals and GaN films were irradiated by swift heavy ions {sup 86}Kr and {sup 209}Bi with kinetic energies of 25 and 9.5 MeV per nucleon and ion fluence in the range 5 × 10{sup 10} to 3.6 × 10{sup 12} ions/cm{sup 2}. The characteristic optical bands were studied by Raman spectroscopy to reveal the disorder and defects induced in the samples during the irradiation process. The crystallinity of InP and GaN was found to be deteriorated after irradiation by the swift heavy ions and resulted in the amorphous nature of the samples along the ion tracks. The amorphous tracks observed by transmission electron microscopy (TEM) images confirmed the formation of lattice defects. In typical F{sub 2}(LO) mode, in case of InP, the spectra shifted towards the lower wavenumbers with a maximum shift of 7.6 cm{sup −1} induced by 1030 MeV Bi ion irradiation. While in case of GaN, the typical E{sub 2}(high) mode shifted towards the higher wavenumbers, with maximum shift of 5.4 cm{sup −1} induced by 760 MeV Bi ion irradiation at ion fluence of 1 × 10{sup 12} ions/cm{sup 2}. The observed Raman shifts reveal the presence of lattice defects and disorder induced in the samples after irradiation by the swift heavy ions. This irradiation also generated lattice stress in the samples, which has been investigated and discussed in detail in this work.

  3. Ion irradiation effects on tensile properties of carbon fibres

    International Nuclear Information System (INIS)

    Kurumada, A.; Ishihara, M.; Baba, S.; Aihara, J.

    2004-01-01

    Carbon/carbon composite materials have high thermal conductivity and excellent mechanical properties at high temperatures. They have been used as structural materials at high temperatures in fission and experimental fusion reactors. The changes in the microstructures and the mechanical properties due to irradiation damage must be measured for the safety design and the life assessment of the materials. The purpose of this study is to obtain a basic knowledge of the development of new carbon composite materials having high thermal conductivity and excellent resistance to irradiation damage. Five kinds of carbon fibres were selected, including a vapour growth carbon fibre (VGCF; K1100X), a polyacrylonitrile-based fibre (PAN; M55JB by Toray Corp.), two meso-phase pitch-based fibres (YS-15-60S and YS-70-60S by Nippon Graphite Fiber Corp.) and a pitch-based fibre (K13C2U by Mitsubishi Chemical Co.). They were irradiated by high-energy carbon, nickel and argon ions. Irradiation damages in the carbon fibres are expected to be uniform across the cross-section, as the diameters of the carbon fibres are about 20 μm and are sufficiently smaller than the ranges of ions. The cross-sectional areas increased due to ion irradiation, with the exception of the K1100X of VGCF. One of the reasons for the increases is the swelling of carbon basal planes due to lattice defects in the graphite interlayer. The tensile strengths and the Young's moduli decreased due to ion irradiation except for the K1100X of VGCF and the YS-15-60S of meso-phase pitch-based fibres. One of the reasons for the decreases is thought to be that the microstructures of carbon fibres are damaged in the axial direction, as ions were irradiated vertically with respect to the longitudinal direction of carbon fibres. The results of this study indicate that the VGCF and the meso-phase pitch-based carbon fibres could be useful as reinforcement fibres of new carbon composite materials having high thermal conductivity and

  4. Variability in fluence and spectrum of high-energy photon bursts produced by lightning leaders

    OpenAIRE

    Celestin , Sebastien; Xu , Wei; Pasko , Victor P.

    2015-01-01

    International audience; In this paper, we model the production and acceleration of thermal runaway electrons during negative corona flash stages of stepping lightning leaders and the corresponding terrestrial gamma ray flashes (TGFs) or negative cloud-to-ground (−CG) lightning-produced X-ray bursts in a unified fashion. We show how the source photon spectrum and fluence depend on the potential drop formed in the lightning leader tip region during corona flash and how the X-ray burst spectrum ...

  5. Swelling in several commercial alloys irradiated to very high neutron fluence

    International Nuclear Information System (INIS)

    Gelles, D.S.; Pintler, J.S.

    1984-01-01

    Swelling values have been obtained from a set of commercial alloys irradiated in EBR-II to a peak fluence of 2.5 x 10 23 n/cm 2 (E > 0.1 MeV) or approx. 125 dpa covering the range 400 to 650 0 C. The alloys can be ranked for swelling resistance from highest to lowest as follows: the martensitic and ferritic alloys, the niobium based alloys, the precipitation strengthened iron and nickel based alloys, the molybdenum alloys and the austenitic alloys

  6. Modification of graphene by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Bukowska, Hanna; Akcoeltekin, Sevilay; El Kharrazi, Mourad; Schleberger, Marika [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Osmani, Orkhan [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Technische Universitaet Kaiserslautern, Fachbereich Physik, Gottlieb-Daimler-Strasse, Gebaeude 47, 67663 Kaiserslautern (Germany)

    2010-07-01

    Ion irradiation can be used to modify surfaces on the nanometer scale. We investigate graphene on different insulator (SrTiO{sub 3}, TiO{sub 2}, and Al{sub 2}O{sub 3}) and semiconductor (SiO{sub 2}) substrates. The bombardment of those target surfaces with swift heavy ions under grazing angle of incidence creates chains of nanodots on the substrate and folds graphene to typical origami-like structures. The shape of the folded graphene seems to depend on the length of the tracks. The length can be controlled by the angle of incidence. From the analysis of atomic force microscopy measurements, we classify the different types of modifications, with the aim to determine the relationship between chain length and origami shape. Further more we want to develop a theoretical understanding of the physical processes leading to the folding.

  7. Softening of metals under hydrogen ion irradiation

    International Nuclear Information System (INIS)

    Guseva, M.I.; Korshunov, S.N.; Martynenko, Yu.V.; Skorlupkin, I.D.

    2005-01-01

    Experimental study results are presented on steel type 18-10 creep under hydrogen ion irradiation. The Irradiation of annealed specimens is accomplished by 15 keV H 2 + ions with a dose up to 10 22 m -2 at current density of 0.6 A/m 2 at temperatures of 570-770 K. Creep tests show that the irradiation at T = 770 K results in a sharp increase of creep rate. At t 570 K the effect of ion-induced creep in steel 18-10 is not observed. The model is proposed which explains the ion-induced creep by accumulation of hydrogen along grain boundaries, their weakening and removal of obstacles to sliding [ru

  8. Scanning ion irradiation of polyimide films

    Energy Technology Data Exchange (ETDEWEB)

    Luecken, Stefan; Koval, Yuri; Mueller, Paul [Department of Physics and Interdisciplinary Center for Molecular Materials (ICMM), Universitaet Erlangen-Nuernberg (Germany)

    2012-07-01

    Recently we found, that the surface of nearly any polymer can be converted into conductive material by low energy ion irradiation. The graphitized layer consists of nanometer sized graphene and graphite flakes. In order to enhance the conductivity and to increase the size of the flakes we applied a novel method of scanning irradiation. We investigated the influence of various irradiation parameters on the conductivity of the graphitized layer. We show, that the conductance vs. temperature can be described in terms of weak Anderson localization. At approximately 70 K, a crossover occurs from 2-dimensional to 3-dimensional behavior. This can be explained by a decrease of the Thouless length with increasing temperature. The crossover temperature can be used to estimate the thickness of the graphitized layer.

  9. Temperature dependent surface modification of molybdenum due to low energy He+ ion irradiation

    International Nuclear Information System (INIS)

    Tripathi, J.K.; Novakowski, T.J.; Joseph, G.; Linke, J.; Hassanein, A.

    2015-01-01

    In this paper, we report on the temperature dependent surface modifications in molybdenum (Mo) samples due to 100 eV He + ion irradiation in extreme conditions as a potential candidate to plasma-facing components in fusion devices alternative to tungsten. The Mo samples were irradiated at normal incidence, using an ion fluence of 2.6 × 10 24 ions m −2 (with a flux of 7.2 × 10 20 ions m −2 s −1 ). Surface modifications have been studied using high-resolution field emission scanning electron-(SEM) and atomic force (AFM) microscopy. At 773 K target temperature homogeneous evolution of molybdenum nanograins on the entire Mo surface were observed. However, at 823 K target temperature appearance of nano-pores and pin-holes nearby the grain boundaries, and Mo fuzz in patches were observed. The fuzz density increases significantly with target temperatures and continued until 973 K. However, at target temperatures beyond 973 K, counterintuitively, a sequential reduction in the fuzz density has been seen till 1073 K temperatures. At 1173 K and above temperatures, only molybdenum nano structures were observed. Our temperature dependent studies confirm a clear temperature widow, 823–1073 K, for Mo fuzz formation. Ex-situ high resolution X-ray photoelectron spectroscopy studies on Mo fuzzy samples show the evidence of MoO 3 3d doublets. This elucidates that almost all the Mo fuzz were oxidized during open air exposure and are thick enough as well. Likewise the microscopy studies, the optical reflectivity measurements also show a sequential reduction in the reflectivity values (i.e., enhancement in the fuzz density) up to 973 K and after then a sequential enhancement in the reflectivity values (i.e., reduction in the fuzz density) with target temperatures. This is in well agreement with microscopy studies where we observed clear temperature window for Mo fuzz growth

  10. Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

    Energy Technology Data Exchange (ETDEWEB)

    Vishwanath, V. [Applied Materials, 3225 Oakmead Village Drive, Santa Clara, CA 95052 (United States); Demenev, E. [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, Trento (Italy); Department of Molecular Science and Nanosystems, Ca’Foscari University, Dorsoduro 2137, 30123 Venice (Italy); Giubertoni, D., E-mail: giuberto@fbk.eu [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, Trento (Italy); Vanzetti, L. [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, Trento (Italy); Koh, A.L. [Stanford Nanocharacterization Laboratory, Stanford University, 476 Lomita Mall, Stanford, CA 94305 (United States); Steinhauser, G. [Colorado State University, Environmental and Radiological Health Sciences, Fort Collins, CO 80523 (United States); Leibniz Universität Hannover, Institut für Radioökologie und Strahlenschutz, 30419 Hannover (Germany); Pepponi, G.; Bersani, M. [Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, Trento (Italy); Meirer, F., E-mail: f.meirer@uu.nl [Inorganic Chemistry and Catalysis, Utrecht University, Utrecht 3584 CG (Netherlands); Foad, M.A. [Applied Materials, 3225 Oakmead Village Drive, Santa Clara, CA 95052 (United States)

    2015-11-15

    Highlights: • Samples prepared by high fluence, low-energy PIII of AsH{sub 3}{sup +} on Si(1 0 0) were studied. • PIII is of high technological interest for ultra-shallow doping and activation. • We used a multi-technique approach to study the As-implanted surface. • We show that PIII presents a new set of problems that needs to be tackled. • The presented study goes toward understanding the root mechanisms involved. - Abstract: High fluence (>10{sup 15} ions/cm{sup 2}) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH{sub 3}{sup +} on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As{sub 2}O{sub 3} micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.

  11. Phenomenological understanding of dewetting and embedding of noble metal nanoparticles in thin films induced by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Jai, E-mail: jai.gupta1983@gmail.com [Department of Chemistry, MMH College (Ch. Charan Singh University Meerut), Ghaiziabad 201001 (India); Chemical Physics of Materials, Université Libre de Bruxelles, Campus de la Plaine, CP 243, B-1050 Bruxelles (Belgium); Tripathi, A. [Inter University Accelerator Centre, Aruna Asif Ali Marg, New Delhi 110067 (India); Gautam, Sanjeev; Chae, K.H.; Song, Jonghan [Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136–791 (Korea, Republic of); Rigato, V. [INFN Laboratori Nazionali di Legnaro, Via Romea. 4, 35020 Legnaro, Padova (Italy); Tripathi, Jalaj [Department of Chemistry, MMH College (Ch. Charan Singh University Meerut), Ghaiziabad 201001 (India); Asokan, K. [Inter University Accelerator Centre, Aruna Asif Ali Marg, New Delhi 110067 (India)

    2014-10-15

    The present experimental work provides the phenomenological approach to understand the dewetting in thin noble metal films with subsequent formation of nanoparticles (NPs) and embedding of NPs induced by ion irradiation. Au/polyethyleneterepthlate (PET) bilayers were irradiated with 150 keV Ar ions at varying fluences and were studied using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (X-TEM). Thin Au film begins to dewet from the substrate after irradiation and subsequent irradiation results in spherical nanoparticles on the surface that at a fluence of 5 × 10{sup 16} ions/cm{sup 2} become embedded into the substrate. In addition to dewetting in thin films, synthesis and embedding of metal NPs by ion irradiation, the present article explores fundamental thermodynamic principles that govern these events systematically under the effect of irradiation. The results are explained on the basis of ion induced sputtering, thermal spike inducing local melting and of thermodynamic driving forces by minimization of the system free energy where contributions of surface and interfacial energies are considered with subsequent ion induced viscous flow in substrate. - Highlights: • Phenomenological interpretation of dewetting and embedding of metal NPs in thin film. • Exploring fundamental thermodynamic principles under influence of ion irradiation. • Ion induced surface/interface microstructural changes using SEM/X-TEM. • Ion induced sputtering, thermal spike induced local melting. • Thermodynamic driving forces relate to surface and interfacial energies.

  12. Development of porous structures in GaSb by ion irradiation

    International Nuclear Information System (INIS)

    Jacobi, C.C.; Steinbach, T.; Wesch, W.

    2012-01-01

    Ion irradiation of GaSb causes not only defect formation but also leads to the formation of a porous structure. To study the behaviour of this structural modification, GaSb was irradiated with 6 MeV Iodine ions and ion fluences from 5 × 10 12 to 6 × 10 15 ions/cm 2 . The samples were investigated by step height measurements and scanning electron microscopy (SEM). Experiments were performed with two different procedures: (CI) Continuous Irradiation of samples followed by measurements of the step height in air and (SI) Stepwise Irradiation of samples with measurements of the step height in air between subsequent irradiations. Samples irradiated continuously, show a linear increase of the step height with increasing ion fluence up to 1.5 × 10 14 ions/cm 2 followed by a steeper, linear increase for higher ion fluences up to a step height of 32 μm. This swelling is induced by a formation of voids, and the two different slopes can be explained by a transformation from isolated voids to a rod like structure. For samples irradiated accordingly to procedure (SI), the step height shows the same behaviour up to an ion fluence of 1.5 × 10 14 ions/cm 2 resulting in a step height of ≈3 μm but then decreases with further irradiation. The latter effect is caused by a compaction of the porous structure.

  13. Effect of microstructure on light ion irradiation creep in nickel

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Simonen, E.P.; Bradley, E.R.; Stang, R.G.

    1983-01-01

    The concept of inhomogeneous slip or localized deformation is introduced to account for a weak dependence of irradiation creep on initial microstructure. Specimens of pure nickel (Ni) with three different microstructures were irradiated at 473 K with 15-17 MeV deuterons in the Pacific Northwest Laboratory (PNL) light ion irradiation creep apparatus. A dispersed barrier model for Climb-Glide (CG) creep was unable to account for the observed creep rates and creep strains. The weak dependence on microstructure was consistent with the Stress Induced Preferential Absorption (SIPA) creep mechanism but a high stress enhanced bias had to be assumed to account for the creep rates. Also, SIPA was unable to account for the observed creep strains. The CG and SIPA modeling utilized rate theory calculations of point defect fluxes and transmission electron microscopy for sink sizes and densities. (orig.)

  14. Modification of embedded Cu nanoparticles: Ion irradiation at room temperature

    International Nuclear Information System (INIS)

    Johannessen, B.; Kluth, P.; Giulian, R.; Araujo, L.L.; Llewellyn, D.J.; Foran, G.J.; Cookson, D.J.; Ridgway, M.C.

    2007-01-01

    Cu nanoparticles (NPs) with an average diameter of ∼25 A were synthesized in SiO 2 by ion implantation and thermal annealing. Subsequently, the NPs were exposed to ion irradiation at room temperature simultaneously with a bulk Cu reference film. The ion species/energy was varied to achieve different values for the nuclear energy loss. The short-range atomic structure and average NP diameter were measured by means of extended X-ray absorption fine structure spectroscopy and small angle X-ray scattering, respectively. Transmission electron microscopy yielded complementary results. The short-range order of the Cu films remained unchanged consistent with the high regeneration rate of bulk elemental metals. For the NP samples it was found that increasing nuclear energy loss yielded gradual dissolution of NPs. Furthermore, an increased structural disorder was observed for the residual NPs

  15. Effects of microstructure on light ion irradiation creep in nickel

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Simonen, E.P.; Bradley, E.R.; Stang, R.G.

    1982-10-01

    The concept of inhomogeneous slip or localized deformation is introduced to account for a weak dependence of irradiation creep on initial microstructure. Specimens of pure Ni with three different microstructures were irradiated at 473 0 K with 15 to 17 MeV deuterons in the PNL light ion irradiation creep apparatus. A dispersed barrier model for climb-glide creep was unable to account for the observed creep rates and creep strains. The weak dependence on microstructure was consistent with the SIPA creep mechanism but a high stress enhanced bias had to be assumed to account for the creep rates. Also, SIPA was unable to account for the observed creep strains. The modeling utilized rate theory calculations of point defect fluxes and transmission electron microscopy for sink sizes and densities

  16. Damage growth in Si during self-ion irradiation: A study of ion effects over an extended energy range

    International Nuclear Information System (INIS)

    Holland, O.W.; El-Ghor, M.K.; White, C.W.

    1989-01-01

    Damage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2--3 times 10 14 cm -2 ) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamage implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process. 15 refs, 9 figs

  17. Heavy ion irradiation effects of polymer film on absorption of light

    Energy Technology Data Exchange (ETDEWEB)

    Kasai, Noboru; Seguchi, Tadao [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Arakawa, Tetsuhito

    1997-03-01

    Ion irradiation effects on the absorption of light for three types of polymer films; polyethylene-terephthalate (PET), polyethylene-naphthalate (PEN), and polyether-ether-ketone (PEEK) were investigated by irradiation of heavy ions with Ni{sup 4+}(15MeV), O{sup 6+}(160MeV), and Ar{sup 8+}(175MeV), and compared with electron beams(EB) irradiation. The change of absorption at 400nm by a photometer was almost proportional to total dose for ions and EB. The absorption per absorbed dose was much high in Ni{sup 4+}, but rather small in O{sup 6+} and Ar{sup 8+} irradiation, and the absorption by EB irradiation was accelerated by the temperature of polymer film during irradiation. The beam heating of materials during ion irradiation was assumed, especially for Ni ion irradiation. The heavy ion irradiation effect of polymers was thought to be much affected by the ion beam heating than the linear energy transfer(LET) of radiation source. (author)

  18. Studies of defects on ion irradiated diamond

    Energy Technology Data Exchange (ETDEWEB)

    Lai, P F; Prawer, S; Spargo, A E.C.; Bursill, L A [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    It is known that diamond is amorphized or graphitized when irradiated above a critical dose. Above this critical dose, D{sub c}, the resistance R is found to drop very rapidly due to the formation of graphite regions which overlap at D{sub c} to form a semi-continuous electrically conducting pathway through the sample. One particularly interesting method of studying this transformation is electron energy-loss spectroscopy (EELS). Using EELS, the different phases of carbon can be identified and distinguished from each other using the extended energy-loss fine structure (EXELFS) of the core-loss part of the spectrum. EELS is a sensitive method for determining the electronic structure of small areas of a sample. In this paper, transmission electron microscopy (TEM) and EELS measurements of the ion irradiated diamond were combined in an attempt to correlate the microstructural nature of the ion-beam induced damage to the changes in the electrical and other properties. 7 refs., 1 tab., 2 figs.

  19. Studies of defects on ion irradiated diamond

    Energy Technology Data Exchange (ETDEWEB)

    Lai, P.F.; Prawer, S.; Spargo, A.E.C.; Bursill, L.A. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    It is known that diamond is amorphized or graphitized when irradiated above a critical dose. Above this critical dose, D{sub c}, the resistance R is found to drop very rapidly due to the formation of graphite regions which overlap at D{sub c} to form a semi-continuous electrically conducting pathway through the sample. One particularly interesting method of studying this transformation is electron energy-loss spectroscopy (EELS). Using EELS, the different phases of carbon can be identified and distinguished from each other using the extended energy-loss fine structure (EXELFS) of the core-loss part of the spectrum. EELS is a sensitive method for determining the electronic structure of small areas of a sample. In this paper, transmission electron microscopy (TEM) and EELS measurements of the ion irradiated diamond were combined in an attempt to correlate the microstructural nature of the ion-beam induced damage to the changes in the electrical and other properties. 7 refs., 1 tab., 2 figs.

  20. Nanoscale Morphology Evolution Under Ion Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Aziz, Michael J. [President & Fellows of Harvard College, Cambridge, MA (United States)

    2014-11-10

    We showed that the half-century-old paradigm of morphological instability under irradiation due to the curvature-dependence of the sputter yield, can account neither for the phase diagram nor the amplification or decay rates that we measure in the simplest possible experimental system -- an elemental semiconductor with an amorphous surface under noble-gas ion irradiation; We showed that a model of pattern formation based on the impact-induced redistribution of atoms that do not get sputtered away explains our experimental observations; We developed a first-principles, parameter-free approach for predicting morphology evolution, starting with molecular dynamics simulations of single ion impacts, lasting picoseconds, and upscaling through a rigorous crater-function formalism to develop a partial differential equation that predicts morphology evolution on time scales more than twelve orders of magnitude longer than can be covered by the molecular dynamics; We performed the first quantitative comparison of the contributions to morphological instability from sputter removal and from impact-induced redistribution of atoms that are removed, and showed that the former is negligible compared to the latter; We established a new paradigm for impact-induced morphology evolution based on crater functions that incorporate both redistribution and sputter effects; and We developed a model of nanopore closure by irradiation-induced stress and irradiationenhanced fluidity, for the near-surface irradiation regime in which nuclear stopping predominates, and showed that it explains many aspects of pore closure kinetics that we measure experimentally.

  1. Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography.

    Science.gov (United States)

    Gnaser, Hubert; Radny, Tobias

    2015-12-01

    Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18)cm(-2) and ion flux densities f of (0.4-2) × 10(14) cm(-2) s(-1) were used. Nanodot structures were found to evolve on the surface from these ion irradiations, their dimensions however, depend on the specific bombardment conditions. The resulting surface morphology was examined by atomic force microscopy (AFM). As a function of ion fluence, the mean radius, height, and spacing of the dots can be fitted by power-law dependences. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that by APT the composition of individual InP nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of ~1 nm and amount to 1.3-1.8. However, several aspects critical for the analyses were identified: (i) because of the small dimensions of these nanostructures a successful tip preparation proved very challenging. (ii) The elemental compositions obtained from APT were found to be influenced pronouncedly by the laser pulse energy; typically, low energies result in the correct stoichiometry whereas high ones lead to an inhomogeneous evaporation from the tips and deviations from the nominal composition. (iii) Depending again on the laser energy, a prolific emission of Pn cluster ions was observed, with n ≤ 11. Copyright © 2015. Published by Elsevier B.V.

  2. The effect of high-resolution fluences by couch shift between arcs on the VMAT plan quality

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jung In; Park, So Yeon; Choi, Chang Heon; Park, Jong Min [Dept. of Radiation Oncology, Seoul National University Hospital, Seoul (Korea, Republic of); Wu, Hong Gyun [Dept. of Radiation Oncology, Seoul National University College of Medicine, Seoul (Korea, Republic of)

    2016-12-15

    Various studies have demonstrated the dosimetric advantages of multi-leaf collimators (MLCs) with fine leaf widths for both intensity modulated radiation therapy (IMRT) and volumetric modulated arc therapy (VMAT), which can generate high resolution fluences. However, a practical disadvantage of MLCs with fine leaf widths is a limited field length in the longitudinal direction. This is because the numbers of leaves and motors are limited due to spatial constraints within the treatment head. We propose an alternative way to generate high resolution fluences of a VMAT plan without MLCs with fine leaf widths for the treatment of large H and N target volumes. With the Millennium 120 MLC with inner leaf widths of 5 mm, we simulate 2.5 mm inner leaf widths by a 2.5 mm shift of the patient couch in the longitudinal direction between arcs. In this way, we acquire not only the improved dosimetric effects of the MLCs with fine leaf widths, but also the full coverage of the H and N target volumes. The HAS plan was better than the others in terms of normal tissue sparing and plan efficiency.

  3. Short-wavelength ablation of polymers in the high-fluence regime

    International Nuclear Information System (INIS)

    Liberatore, Chiara; Juha, Libor; Vyšín, Ludek; Endo, Akira; Mocek, Tomas; Mann, Klaus; Müller, Matthias; Pina, Ladislav; Rocca, Jorge J

    2014-01-01

    Short-wavelength ablation of poly(1,4-phenylene ether-ether-sulfone) (PPEES) and poly(methyl methacrylate) (PMMA) was investigated using extreme ultraviolet (XUV) and soft x-ray (SXR) radiation from plasma-based sources. The initial experiment was performed with a 10 Hz desktop capillary-discharge XUV laser lasing at 46.9 nm. The XUV laser beam was focused onto the sample by a spherical mirror coated with a Si/Sc multilayer. The same materials were irradiated with 13.5 nm radiation emitted by plasmas produced by focusing an optical laser beam onto a xenon gas-puff target. A Schwarzschild focusing optics coated with a Mo/Si multilayer was installed at the source to achieve energy densities exceeding 0.1 J cm −2 in the tight focus. The existing experimental system at the Laser Laboratorium Göttingen was upgraded by implementing a 1.2 J driving laser. An increase of the SXR fluence was secured by improving the alignment technique. (paper)

  4. Microstructural examination of several commercial ferritic alloys irradiated to high fluence

    International Nuclear Information System (INIS)

    Gelles, D.S.

    1981-01-01

    Microstructural observations are reported for a series of five commercial ferritic alloys, 2 1/4 Cr-1 Mo, H-11, EM-12, 416, and 430F, covering the composition range 2.25 to 17% chromium, following EBR-II irradiation over the temperature range 400 to 650 0 C and to a maximum fluence of 17.6 x 10 22 n/cm 2 (E > 0.1 MeV). These materials were confirmed to be low void swelling with maximum swelling of 0.63% measured in EM-12 following irradiation at 400 0 C to 14.0 x 10 22 n/cm 2 . A wide range of precipitation response was found both as a function of alloy and irradiation temperature. Precipitates observed included M 6 C, Mo 2 C, Chi, Laves, M 23 C 6 , α' and a low temperature phase as yet unidentified. It is predicted, based on these results, that the major impact of irradiation on the ferritic alloy class will be changes in postirradiation mechanical properties due to precipitation

  5. Substrate and coating defect planarization strategies for high-laser-fluence multilayer mirrors

    International Nuclear Information System (INIS)

    Stolz, Christopher J.; Wolfe, Justin E.; Mirkarimi, Paul B.; Folta, James A.; Adams, John J.; Menor, Marlon G.; Teslich, Nick E.; Soufli, Regina; Menoni, Carmen S.; Patel, Dinesh

    2015-01-01

    Planarizing or smoothing over nodular defects in multilayer mirrors can be accomplished by a discrete deposit-and-etch process that exploits the angle-dependent etching rate of optical materials. Typically, nodular defects limit the fluence on mirrors irradiated at 1064 nm with 10 ns pulse lengths due to geometrically- and interference-induced light intensification. Planarized hafina/silica multilayer mirrors have demonstrated > 125 J/cm 2 laser resistance for single-shot testing and 50 J/cm 2 for multi-shot testing for nodular defects originating on the substrate surface. Two planarization methods were explored: thick planarization layers on the substrate surface and planarized silica layers throughout the multilayer in which only the silica layers that are below one half of the incoming electric field value are etched. This paper also describes the impact of planarized defects that are buried within the multilayer structure compared to planarized substrate particulate defects. - Highlights: • Defect planarization significantly improves multilayer mirror laser resistance • Substrate and coating defects have both been effectively planarized • Single and multishot laser resistance improvement was demonstrated

  6. Microstructural examination of several commercial ferritic alloys irradiated to high fluence

    Science.gov (United States)

    Gelles, D. S.

    Microstructural observations are reported for a series of five commercial ferritic alloys, 2 {1}/{4}Cr-1Mo , H-11, EM-12, 416, and 430F, covering the composition range 2.25 to 17% chromium, following EBR-II irradiation over the temperature range 400 to 650°C and to a maximum fluence of 1.76 × 10 23 n/cm 2 (E >0.1 MeV). These materials were confirmed to be low void swelling with maximum swelling of 0.63% measured in EM-12 following irradiation at 400°C to 1.40 × 10 23 n/cm 2. A wide range of precipitation response was found both as a function of alloy and irradiation temperature. Precipitates observed included M 6C, Mo 2C, Chi, Laves, M 23C 6, α' and a low temperature phase as yet unidentified. It is predicted, based on these results, that the major impact of irradiation on the ferritic alloy class will be changes in postirradiation mechanical properties due to precipitation.

  7. Amorphisation of boron carbide under slow heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Gosset, D., E-mail: Dominique.gosset@cea.fr [CEA Saclay, DEN, DANS, DMN, SRMA, LA2M, Université Paris-Saclay, 91191, Gif/Yvette (France); Miro, S. [CEA Saclay, DEN, DANS, DMN, SRMP, Laboratoire JANNUS, Université Paris-Saclay, 91191, Gif/Yvette (France); Doriot, S. [CEA Saclay, DEN, DANS, DMN, SRMA, LA2M, Université Paris-Saclay, 91191, Gif/Yvette (France); Moncoffre, N. [CNRS/IN2P3/IPNL, 69622, Villeurbanne (France)

    2016-08-01

    Boron carbide B{sub 4}C is widely used as a neutron absorber in nuclear plants. Most of the post-irradiation examinations have shown that the structure of the material remains crystalline, in spite of very high atomic displacement rates. Here, we have irradiated B{sub 4}C samples with 4 MeV Au ions with different fluences at room temperature. Transmission electron microscopy (TEM) and Raman spectroscopy have been performed. The Raman analyses show a high structural disorder at low fluence, around 10{sup −2} displacements per atoms (dpa). However, the TEM observations show that the material remains crystalline up to a few dpa. At high fluence, small amorphous areas a few nanometers large appear in the damaged zone but the long range order is preserved. Moreover, the size and density of the amorphous zones do not significantly grow when the damage increases. On the other hand, full amorphisation is observed in the implanted zone at a Au concentration of about 0.0005. It can be inferred from those results that short range and long range damages arise at highly different fluences, that heavy ions implantation has drastic effects on the structure stability and that in this material self-healing mechanisms are active in the damaged zone.

  8. Swift heavy ion irradiation induced modification of structure and ...

    Indian Academy of Sciences (India)

    1Department of Physics, Salipur College, Salipur 754 103, India. 2Department of ... Ion irradiation; nanoparticles; atomic force microscopy; BiFeO3. 1. Introduction .... and to understand their possible origin, a study on power spectral density ...

  9. The effect of ion irradiation and elevated temperature on the microstructure and the properties of C/W/C/B multilayer coating

    Energy Technology Data Exchange (ETDEWEB)

    Vlcak, Petr, E-mail: petr.vlcak@fs.cvut.cz

    2016-03-01

    Graphical abstract: - Highlights: • C/W/C/B multilayer PVD coating was treated by 45 keV nitrogen ion irradiation. • The effect of ion irradiation and elevated temperature on microstructure was analyzed. • Formation of new compounds and degradation of carbon fraction were observed. • The causes of the observed changes in surface properties were discussed. - Abstract: C/W/C/B multi-layer PVD coating with a layer period of 10 nm and 500 nm in thickness was irradiated with 45 keV N ions at fluence of 1 × 10{sup 17} cm{sup −2}. Ion irradiation was performed at room temperature or at an elevated temperature of 500 °C. The microstructure was investigated by X-ray diffraction, by X-ray photoelectron spectroscopy, and by Raman spectroscopy. The results showed that implanted N ions bond both with W atoms and with C atoms. N ion irradiation induced the formation of WC and WC{sub 1−x} phases. The energetic ions transformed the C bonds in defect sp{sup 2} and defect sp{sup 3} hybridizations, resulting in graphitization of the carbon fraction in the multilayer coating. Ion irradiation reduced the cohesive strength of the monolayers, reduced hardness of the C/W/C/B coating, increased its surface roughness and increased its friction coefficient. An elevated temperature during ion irradiation caused a better arrangement of the WC phase and further graphitization of the carbon fraction, in comparison with a coating treated by ion irradiation at room temperature. There is discussion of the causes of the observed changes in surface properties.

  10. Ion irradiation of CH4-containing icy mixtures

    International Nuclear Information System (INIS)

    Baratta, G.A.; Domingo, M.; Ferini, G.; Leto, G.; Palumbo, M.E.; Satorre, M.A.; Strazzulla, G.

    2003-01-01

    We have studied by infrared absorption spectroscopy the effects of ion irradiation with 60 keV Ar 2+ ions on pure methane (CH 4 ) ice at 12 K and mixtures with water (H 2 O) and nitrogen (N 2 ). Ion irradiation, among other effects, causes the rupture of original molecular bonds and the formation of molecular species not present in the initial ice. Here we present the experimental results and discuss their astrophysical relevance

  11. Genetic effects of heavy ion irradiation in maize and soybean

    International Nuclear Information System (INIS)

    Yatou, Osamu; Amano, Etsuo; Takahashi, Tan.

    1992-01-01

    Somatic mutation on leaves of maize and soybean were observed to investigate genetic effects of heavy ion irradiation. Maize seeds were irradiated with N, Fe and U ions and soybean seeds were irradiated with N ions. This is a preliminary report of the experiment, 1) to examine the mutagenic effects of the heavy ion irradiation, and 2) to evaluate the genetic effects of cosmic ray exposure in a space ship outside the earth. (author)

  12. Luminescence imaging of water during carbon-ion irradiation for range estimation

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Seiichi, E-mail: s-yama@met.nagoya-u.ac.jp; Komori, Masataka; Koyama, Shuji; Morishita, Yuki; Sekihara, Eri [Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine, Higashi-ku, Nagoya, Aichi 461-8673 (Japan); Akagi, Takashi; Yamashita, Tomohiro [Hygo Ion Beam Medical Center, Hyogo 679-5165 (Japan); Toshito, Toshiyuki [Department of Proton Therapy Physics, Nagoya Proton Therapy Center, Nagoya City West Medical Center, Aichi 462-8508 (Japan)

    2016-05-15

    Purpose: The authors previously reported successful luminescence imaging of water during proton irradiation and its application to range estimation. However, since the feasibility of this approach for carbon-ion irradiation remained unclear, the authors conducted luminescence imaging during carbon-ion irradiation and estimated the ranges. Methods: The authors placed a pure-water phantom on the patient couch of a carbon-ion therapy system and measured the luminescence images with a high-sensitivity, cooled charge-coupled device camera during carbon-ion irradiation. The authors also carried out imaging of three types of phantoms (tap-water, an acrylic block, and a plastic scintillator) and compared their intensities and distributions with those of a phantom containing pure-water. Results: The luminescence images of pure-water phantoms during carbon-ion irradiation showed clear Bragg peaks, and the measured carbon-ion ranges from the images were almost the same as those obtained by simulation. The image of the tap-water phantom showed almost the same distribution as that of the pure-water phantom. The acrylic block phantom’s luminescence image produced seven times higher luminescence and had a 13% shorter range than that of the water phantoms; the range with the acrylic phantom generally matched the calculated value. The plastic scintillator showed ∼15 000 times higher light than that of water. Conclusions: Luminescence imaging during carbon-ion irradiation of water is not only possible but also a promising method for range estimation in carbon-ion therapy.

  13. Luminescence imaging of water during carbon-ion irradiation for range estimation

    International Nuclear Information System (INIS)

    Yamamoto, Seiichi; Komori, Masataka; Koyama, Shuji; Morishita, Yuki; Sekihara, Eri; Akagi, Takashi; Yamashita, Tomohiro; Toshito, Toshiyuki

    2016-01-01

    Purpose: The authors previously reported successful luminescence imaging of water during proton irradiation and its application to range estimation. However, since the feasibility of this approach for carbon-ion irradiation remained unclear, the authors conducted luminescence imaging during carbon-ion irradiation and estimated the ranges. Methods: The authors placed a pure-water phantom on the patient couch of a carbon-ion therapy system and measured the luminescence images with a high-sensitivity, cooled charge-coupled device camera during carbon-ion irradiation. The authors also carried out imaging of three types of phantoms (tap-water, an acrylic block, and a plastic scintillator) and compared their intensities and distributions with those of a phantom containing pure-water. Results: The luminescence images of pure-water phantoms during carbon-ion irradiation showed clear Bragg peaks, and the measured carbon-ion ranges from the images were almost the same as those obtained by simulation. The image of the tap-water phantom showed almost the same distribution as that of the pure-water phantom. The acrylic block phantom’s luminescence image produced seven times higher luminescence and had a 13% shorter range than that of the water phantoms; the range with the acrylic phantom generally matched the calculated value. The plastic scintillator showed ∼15 000 times higher light than that of water. Conclusions: Luminescence imaging during carbon-ion irradiation of water is not only possible but also a promising method for range estimation in carbon-ion therapy.

  14. Susceptible genes and molecular pathways related to heavy ion irradiation in oral squamous cell carcinoma cells

    International Nuclear Information System (INIS)

    Fushimi, Kazuaki; Uzawa, Katsuhiro; Ishigami, Takashi; Yamamoto, Nobuharu; Kawata, Tetsuya; Shibahara, Takahiko; Ito, Hisao; Mizoe, Jun-etsu; Tsujii, Hirohiko; Tanzawa, Hideki

    2008-01-01

    Background and purpose: Heavy ion beams are high linear energy transfer (LET) radiation characterized by a higher relative biologic effectiveness than low LET radiation. The aim of the current study was to determine the difference of gene expression between heavy ion beams and X-rays in oral squamous cell carcinoma (OSCC)-derived cells. Materials and methods: The OSCC cells were irradiated with accelerated carbon or neon ion irradiation or X-rays using three different doses. We sought to identify genes the expression of which is affected by carbon and neon ion irradiation using Affymetrix GeneChip analysis. The identified genes were analyzed using the Ingenuity Pathway Analysis Tool to investigate the functional network and gene ontology. Changes in mRNA expression in the genes were assessed by real-time quantitative reverse transcriptase-polymerase chain reaction (qRT-PCR). Results: The microarray analysis identified 84 genes that were modulated by carbon and neon ion irradiation at all doses in OSCC cells. Among the genes, three genes (TGFBR2, SMURF2, and BMP7) and two genes (CCND1 and E2F3), respectively, were found to be involved in the transforming growth factor β-signaling pathway and cell cycle:G1/S checkpoint regulation pathway. The qRT-PCR data from the five genes after heavy ion irradiation were consistent with the microarray data (P < 0.01). Conclusion: Our findings should serve as a basis for global characterization of radiation-regulated genes and pathways in heavy ion-irradiated OSCC

  15. Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation

    Science.gov (United States)

    Kaushik, Priya Darshni; Aziz, Anver; Siddiqui, Azher M.; Lakshmi, G. B. V. S.; Syväjärvi, Mikael; Yakimova, Rositsa; Yazdi, G. Reza

    2018-05-01

    The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based electronics in this area. There is a need to investigate effect of ion irradiation on SiC due to its application in outer space as outer space is surrounded both by low and high energy ion irradiations. In this work, effect of low energy ion irradiation on structural and optical property of 4H-SiC is investigated. ATR-FTIR is used to study structural modification and UV-Visible spectroscopy is used to study optical modifications in 4H-SiC following 30 keV Ag ion irradiation. FTIR showed decrease in bond density of SiC along the ion path (track) due to the creation of point defects. UV-Visible absorption spectra showed decrease in optical band gap from 3.26 eV to 2.9 eV. The study showed degradation of SiC crystallity and change in optical band gap following low energy ion irradiation and should be addressed while fabricationg devices based on SiC for outer space application. Additionally, this study provides a platform for introducing structural and optical modification in 4H-SiC using ion beam technology in a controlled manner.

  16. Effect of 1.2 MeV argon ions irradiation on magnetic properties of ZnO

    International Nuclear Information System (INIS)

    Mishra, D.K.; Mohapatra, Jyoshnarani; Mahato, Banashree; Kumar, P.; Mitra, Amitav; Singh, S.K.; Kanjilal, D.

    2013-01-01

    Room temperature ferromagnetism in 1.2 MeV argon ions irradiated polycrystalline ZnO has been observed. The magnetic contribution in form of saturation magnetization is higher in sample irradiated with ion fluence of 1 × 10 15 ions/cm 2 . However, annealing of the defects at higher fluences of 5 × 10 15 ions/cm 2 reduce the magnetic contribution in comparison to the magnetic contribution of the lower fluences. The X-ray diffraction reveals that the degree of crystallinity decreases with the increase of ion fluences upto 1 × 10 15 ions/cm 2 and further it increases at a fluence of 5 × 10 15 ions/cm 2 . The inhomogeneous arrangement of grains and changes in their sizes with increasing ion fluences decrease the magnetic ordering of the system. The electron probe microstructure analyses and micro-Raman spectra of irradiated samples show in-homogeneity in zinc and oxygen ratio which is one of the causes to show ferromagnetism.

  17. Specific heat of Nb3Sn and V2Zr compounds irradiated with high fluences fast neutrons

    International Nuclear Information System (INIS)

    Kar'kin, A.E.; Mirmel'shtejn, A.V.; Arkhipov, V.E.; Goshchitskij, B.N.

    1987-01-01

    Specific heat of Nb 3 Sn (structure A15) and V 2 Zr (C15) specimens irradiated with high fluences of bast neutrons has been measured. It is shown that in these compounds the temperature reduction of superconducting transition T c under neutron irradiation is accompanied with high decrease of N(E F ). Phonon spectrum of the irradiated V 2 Zr (amorphous phase) on the whole is harder, than at an initial state, for irradiated Nb 3 Sn state (disordered crystalline structure) phonon spectrum is differ weakly from initial one. General regularities of parameter change of electron and phonon subsystems for A15 compounds investigated here and earlier (V 3 Si, Mo 3 Si, Mo 3 Ge) have been analysed

  18. Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

    CERN Document Server

    Moscatelli, F; Morozzi, A; Mendicino, R; Dalla Betta, G F; Bilei, G M

    2016-01-01

    In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model has been validated through the comparison of the simulation findings with experimental measurements carried out at very high fluences (2×1016 1 MeV equivalent n/cm2) thus fostering the application of this TCAD approach for the design and optimization of the new generation of silicon detectors to be used in future HEP experiments.

  19. A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

    International Nuclear Information System (INIS)

    Kumar, M. Vinay; Krishnaveni, S.; Yashoda, T.; Dinesh, C. M.; Krishnakumar, K. S.; Jayashree, B.; Ramani

    2015-01-01

    The impact of 30MeV boron 4+ and 60MeV oxygen 8+ ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor

  20. Effect of ion irradiation on the surface, structural and mechanical properties of brass

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Shahbaz; Bashir, Shazia, E-mail: shaziabashir@gcu.edu.pk; Ali, Nisar; Umm-i-Kalsoom,; Yousaf, Daniel; Faizan-ul-Haq,; Naeem, Athar; Ahmad, Riaz; Khlaeeq-ur-Rahman, M.

    2014-04-01

    Highlights: • Brass targets were exposed to carbon ions of energy 2 MeV. • The effect of ion dose has been investigated. • The surface morphology is investigated by SEM analysis. • XRD analysis is performed to reveal structural modification. • Mechanical properties were investigated by tensile testing and microhardness testing. - Abstract: Modifications to the surface, structural and mechanical properties of brass after ion irradiation have been investigated. Brass targets were bombarded by carbon ions of 2 MeV energy from a Pelletron linear accelerator for various fluences ranging from 56 × 10{sup 12} to 26 × 10{sup 13} ions/cm{sup 2}. A scanning electron microscope and X-ray diffractometer were utilized to analyze the surface morphology and crystallographic structure respectively. To explore the mechanical properties e.g., yield stress, ultimate tensile strength and microhardness of irradiated brass, an universal tensile testing machine and Vickers microhardness tester were used. Scanning electron microscopy results revealed an irregular and randomly distributed sputter morphology for a lower ion fluence. With increasing ion fluence, the incoherently shaped structures were transformed into dendritic structures. Nano/micro sized craters and voids, along with the appearance of pits, were observed at the maximum ion fluence. From X-ray diffraction results, no new phases were observed to be formed in the brass upon irradiation. However, a change in the peak intensity and higher and lower angle shifting were observed, which represents the generation of ion-induced defects and stresses. Analyses confirmed modifications in the mechanical properties of irradiated brass. The yield stress, ultimate tensile strength and hardness initially decreased and then increased with increasing ion fluence. The changes in the mechanical properties of irradiated brass are well correlated with surface and crystallographic modifications and are attributed to the generation

  1. Anti-biofilm efficacy of 100 MeV gold ion irradiated polycarbonate against Salmonella typhi

    Science.gov (United States)

    Joshi, R. P.; Hareesh, K.; Bankar, A.; Sanjeev, G.; Asokan, K.; Kanjilal, D.; Dahiwale, S. S.; Bhoraskar, V. N.; Dhole, S. D.

    2017-12-01

    Polycarbonate (PC) films were irradiated by 100 MeV gold (Au7+) ions and characterized to study changes in its optical, chemical, surface morphology and thermal properties. UV-Visible spectroscopic results revealed the decrease in the optical band gap of PC after ion irradiation due to chain scission mainly at the carbonyl group which is corroborated by Fourier Transform Infrared spectroscopic results. X-ray diffractogram study showed decrease in crystallinity of PC film after irradiation. Scanning electron microscopic results showed the micropores formation in PC which results in surface roughening. Differential scanning calorimetric results revealed decrease in glass transition temperature indicating the decrease in molecular weight of PC corroborated by rheometric studies. PC films irradiated by 100 MeV Au7+ ions showed increased anti-biofilm activity against the human pathogen, Salmonella typhi (S. typhi). Morphology of S. typhi was changed due to stress of Au7+ irradiated PC. Cells length was increased with increasing fluences. The average cell length, cell volume and surface area was increased significantly (PBiofilm formation was inhibited ≈ 20% at lower fluence and 96% at higher fluence, which observed to be enhanced anti-biofilm activity in Au7+ irradiated PC.

  2. Electrophoresis examination of strand breaks in plasmid DNA induced by low-energy nitrogen ion irradiation

    International Nuclear Information System (INIS)

    Zhao Yong; Tan Zheng; Du Yanhua; Qiu Guanying

    2003-01-01

    To study the effect on plasmid DNA of heavy ion in the energy range of keV where nuclear stopping interaction becomes more important or even predominant, thin film of plasmid pGEM-3Zf(-) DNA was prepared on aluminum surface and irradiated in vacuum ( -3 Pa) by low-energy nitrogen ions with energy of 30 keV (LET=285 keV/μm) at various fluence ranging from 2 x 10 10 to 8.2 x 10 13 ions/cm 2 . DNA strand breaks were analyzed by neutral electrophoresis followed by quantification with image analysis software. Low-energy nitrogen ion irradiation induced single-, double- and multiple double-strand breaks (DSB) and multiple DSB as the dominating form of DNA damages. Moreover, the linear fluence-response relationship at a low fluence range suggests that DSBs are induced predominantly by single ion track. However, strand break production is limited to a short range in the irradiated samples

  3. Phase stability in thermally-aged CASS CF8 under heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Meimei, E-mail: mli@anl.gov [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States); Miller, Michael K. [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831 (United States); Chen, Wei-Ying [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States)

    2015-07-15

    Highlights: • Thermally-aged CF8 was irradiated with 1 MeV Kr ions at 400 °C. • Atom probe tomography revealed a strong dose dependence of G-phase precipitates. • Phase separation of α and α′ in ferrite was reduced after irradiation. - Abstract: The stability of the microstructure of a cast austenitic stainless steel (CASS), before and after heavy ion irradiation, was investigated by atom probe tomography (APT). A CF8 ferrite–austenite duplex alloy was thermally aged at 400 °C for 10,000 h. After this treatment, APT revealed nanometer-sized G-phase precipitates and Fe-rich α and Cr-enriched α′ phase separated regions in the ferrite. The thermally-aged CF8 specimen was irradiated with 1 MeV Kr ions to a fluence of 1.88 × 10{sup 19} ions/m{sup 2} at 400 °C. After irradiation, APT analysis revealed a strong spatial/dose dependence of the G-phase precipitates and the α–α′ spinodal decomposition in the ferrite. For the G-phase precipitates, the number density increased and the mean size decreased with increasing dose, and the particle size distribution changed considerably under irradiation. The inverse coarsening process can be described by recoil resolution. The amplitude of the α–α′ spinodal decomposition in the ferrite was apparently reduced after heavy ion irradiation.

  4. Tuning the hydrophobicity of mica surfaces by hyperthermal Ar ion irradiation

    International Nuclear Information System (INIS)

    Keller, Adrian; Ogaki, Ryosuke; Bald, Ilko; Dong Mingdong; Kingshott, Peter; Fritzsche, Monika; Facsko, Stefan; Besenbacher, Flemming

    2011-01-01

    The hydrophobicity of surfaces has a strong influence on their interactions with biomolecules such as proteins. Therefore, for in vitro studies of bio-surface interactions model surfaces with tailored hydrophobicity are of utmost importance. Here, we present a method for tuning the hydrophobicity of atomically flat mica surfaces by hyperthermal Ar ion irradiation. Due to the sub-100 eV energies, only negligible roughening of the surface is observed at low ion fluences and also the chemical composition of the mica crystal remains almost undisturbed. However, the ion irradiation induces the preferential removal of the outermost layer of K + ions from the surface, leading to the exposure of the underlying aluminosilicate sheets which feature a large number of centers for C adsorption. The irradiated surface thus exhibits an enhanced chemical reactivity toward hydrocarbons, resulting in the adsorption of a thin hydrocarbon film from the environment. Aging these surfaces under ambient conditions leads to a continuous increase of their contact angle until a fully hydrophobic surface with a contact angle >80 deg. is obtained after a period of about 3 months. This method thus enables the fabrication of ultrasmooth biological model surfaces with precisely tailored hydrophobicity.

  5. Changes of structural and hydrogen desorption properties of MgH2 indused by ion irradiation

    Directory of Open Access Journals (Sweden)

    Kurko Sandra V.

    2010-01-01

    Full Text Available Changes in structural and hydrogen desorption properties of MgH2 induced by ion irradiation have been investigated. MgH2 powder samples have been irradiated with 45 keV B3+ and 120 keV Ar8+ions, with ion fluence of 1015 ions/cm2. The effects of ion irradiation are estimated by numerical calculations using SRIM package. The induced material modifications and their consequences on hydrogen dynamics in the system are investigated by XRD, particle size distribution and TPD techniques. Changes of TPD spectra with irradiation conditions suggest that there are several mechanisms involved in desorption process which depend on defect concentration and their interaction and ordering. The results confirmed that the near-surface area of MgH2 and formation of a substoichiometric MgHx (x<2 play a crucial role in hydrogen kinetics and that various concentrations of induced defects substantially influence H diffusion and desorption kinetics in MgH2. The results also confirm that there is possibility to control the thermodynamic parameters by controlling vacancies concentration in the system.

  6. Optical waveguides in Nd:GdVO4 crystals fabricated by swift N3+ ion irradiation

    Science.gov (United States)

    Dong, Ningning; Yao, Yicun; Chen, Feng

    2012-12-01

    Optical planar waveguides have been manufactured in Nd:GdVO4 crystal by swift N3+ ions irradiation at fluence of 1.5 × 1014 ions/cm2. A typical "barrier"-style refractive index profile was formed and the light can be well confined in the waveguide region. The modal distribution of the guided modes obtained from numerical calculation has a good agreement with the experimental modal distribution. The measured photoluminescence spectra revealed that the fluorescence properties of the Nd3+ ions have been modified to some extent in the waveguide's volume. The propagation loss of the planar waveguide can decrease to lower than 1 dB/cm after adequate annealing.

  7. Raman spectroscopic investigations of swift heavy ion irradiation effects in single-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Olejniczak, A.; Skuratov, V.A.; Lukaszewicz, J.P.

    2013-01-01

    In this study, we report the results on swift heavy ion irradiation effects in single-walled carbon nanotubes (SWNTs). Buckypapers, prepared of CVD grown, SWNTs were irradiated at room temperature with 167 MeV Xe ions to fluences in the range of 6×10 11 - 6.5×10 13 cm -2 and investigated using Raman spectroscopy. We observed a rich set of features in the intermediate frequency mode region. Some of them, being defect-induced, resembled fairly well the phonon density of states (DOS) of nanocrystalline glassy carbon. Analysis of the RBM modes has shown that the broader metallic tubes are characterized by higher radiation stability than thinner semiconducting ones. (authors)

  8. Effect of microstructure on radiation induced segregation and depletion in ion irradiated SS316 steel

    International Nuclear Information System (INIS)

    Jin, Hyung Ha; Kwon, Sang Chul; Kwon, Jun Hyun

    2011-01-01

    Irradiation assisted stress corrosion cracking (IASCC), void swelling and irradiation induced hardening are caused by change of characteristics of material by neutron irradiation, stress state of material and environmental situation. It has been known that chemical compositions varies at grain boundary (GB) significantly with fluence level and the depletion of Cr element at GB has been considered as one of important factors causing material degradation, especially, IASCC in austenitic stainless steel. However, experimental results of IASCC under PWR condition were directly not connected with Cr depletion phenomenon by neutron irradiation. Because the mechanism of IASCC under PWR has not yet been clearly understood in spite of many energetic researches, fundamental researches about radiation induced segregation and depletion in irradiated austenitic stainless steels have been attracted again. In this work, an effect of residual microstructure on radiation induced segregation and depletion of alloy elements at GB was investigated in ion irradiated SS316 steel using transmission electron microscope (TEM) with energy dispersive spectrometer (EDS)

  9. Formation of nanostructures on HOPG surface in presence of surfactant atom during low energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ranjan, M., E-mail: ranjanm@ipr.res.in; Joshi, P.; Mukherjee, S.

    2016-07-15

    Low energy ions beam often develop periodic patterns on surfaces under normal or off-normal incidence. Formation of such periodic patterns depends on the substrate material, the ion beam parameters, and the processing conditions. Processing conditions introduce unwanted contaminant atoms, which also play strong role in pattern formation by changing the effective sputtering yield of the material. In this work we have analysed the effect of Cu, Fe and Al impurities introduced during low energy Ar{sup +} ion irradiation on HOPG substrate. It is observed that by changing the species of foreign atoms the surface topography changes drastically. The observed surface topography is co-related with the modified sputtering yield of HOPG. Presence of Cu and Fe amplify the effective sputtering yield of HOPG, so that the required threshold for the pattern formation is achieved with the given fluence, whereas Al does not lead to any significant change in the effective yield and hence no pattern formation occurs.

  10. Impurities-Si interstitials interaction in Si doped with B or Ga during ion irradiation

    International Nuclear Information System (INIS)

    Romano, L; Piro, A M; Grimaldi, M G; Rimini, E

    2005-01-01

    Substitutional impurities (B, Ga) in Si experienced an off-lattice displacement during ion-irradiation using a H + or He + beam at room temperature in random incidence. Samples were prepared by solid phase epitaxy (SPE) of pre-amorphized Si subsequently implanted with B and Ga at a concentration of about 1 x10 20 at.cm -3 confined in a 300 nm thick surface region. The lattice location of impurities was performed by a channelling technique along different axes ( , ) using the 11 B(p,α) 8 Be reaction and standard RBS for B and Ga, respectively. The normalized channelling yield χ of the impurity signal increases with the ion fluence, indicating a progressive off-lattice displacement of the dopant during irradiation in random incidence, until it saturates at χ F I ) generated by the impinging beam in the doped region

  11. High fluence deposition of polyethylene glycol films at 1064 nm by matrix assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Purice, Andreea; Schou, Jørgen; Kingshott, P.

    2007-01-01

    Matrix assisted pulsed laser evaporation (MAPLE) has been applied for deposition of thin polyethylene glycol (PEG) films with infrared laser light at 1064 nm. We have irradiated frozen targets (of 1 wt.% PEG dissolved in water) and measured the deposition rate in situ with a quartz crystal 2...... microbalance. The laser fluence needed to produce PEG films turned out to be unexpectedly high with a threshold of 9 J/cm(2) and the deposition rate was much lower than that with laser light at 355 nm. Results from matrix assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI......-TOF-MS) analysis demonstrate that the chemistry, molecular weight and polydispersity of the PEG films were identical to the starting material. Studies of the film surface with scanning electron microscopy (SEM) indicate that the Si-substrate is covered by a relatively homogenous PEG film with few bare spots. (c...

  12. Plume splitting and oscillatory behavior in transient plasmas generated by high-fluence laser ablation in vacuum

    Science.gov (United States)

    Focsa, C.; Gurlui, S.; Nica, P.; Agop, M.; Ziskind, M.

    2017-12-01

    We present a short overview of studies performed in our research groups over the last decade on the characterization of transient plasma plumes generated by laser ablation in various temporal regimes, from nanosecond to femtosecond. New results are also presented along with this overview, both being placed in the context of similar studies performed by other investigators. Optical (fast gate intensified CCD camera imaging and space- and time-resolved emission spectroscopy) and electrical (mainly Langmuir probe) methods have been applied to experimentally explore the dynamics of the plasma plume and its constituents. Peculiar effects as plume splitting and sharpening or oscillations onset have been evidenced in vacuum at high laser fluence. New theoretical approaches have been developed to account for the experimental observations.

  13. Effects of sintering additives on the microstructural and mechanical properties of the ion-irradiated SiCf/SiC

    Science.gov (United States)

    Fitriani, Pipit; Sharma, Amit Siddharth; Yoon, Dang-Hyok

    2018-05-01

    SiCf/SiC composites containing three different types of sintering additives viz. Sc-nitrate, Al2O3-Sc2O3, and Al2O3-Y2O3, were subjected to ion irradiation using 0.2 MeV H+ ions with a fluence of 3 × 1020 ions/m2 at room temperature. Although all composites showed volumetric swelling upon ion irradiation, SiCf/SiC with Sc-nitrate showed the smallest change followed by those with the Al2O3-Sc2O3 and Al2O3-Y2O3 additives. In particular, SiCf/SiC containing the conventional Al2O3-Y2O3 additive revealed significant microstructural changes, such as surface roughening and the formation of cracks and voids, resulting in reduced fiber pullout upon irradiation. On the other hand, the SiCf/SiC with Sc-nitrate showed the highest resistance against ion irradiation without showing any macroscopic changes in surface morphology and mechanical strength, indicating the importance of the sintering additive in NITE-based SiCf/SiC for nuclear structural applications.

  14. Deuterium ion irradiation induced blister formation and destruction

    Energy Technology Data Exchange (ETDEWEB)

    Song, Jaemin; Kim, Nam-Kyun; Kim, Hyun-Su; Jin, Younggil; Roh, Ki-Baek; Kim, Gon-Ho, E-mail: ghkim@snu.ac.kr

    2016-11-01

    Highlights: • The areal number density of blisters on the grain with (1 1 1) plane orientation increased with increasing ion fluence. • No more blisters were created above the temperature about 900 K due to high thermal mobility of ions and inactivity of traps. • The destruction of blister at the boundary induced by sputtering is proposed. • The blisters were destructed at the position about the boundary by high sputtering yield of oblique incident ions and thin thickness due to plastic deformation at the boundary. - Abstract: The blisters formation and destruction induced by the deuterium ions on a polycrystalline tungsten were investigated with varying irradiation deuterium ion fluence from 3.04 × 10{sup 23} to 1.84 × 10{sup 25} D m{sup −2} s{sup −1} and an fixed irradiated ion energy of 100 eV in an electron cyclotron resonance plasma source, which was similar to the far-scrape off layer region in the nuclear fusion reactors. Target temperature was monitored during the irradiation. Most of blisters formed easily on the grain with (1 1 1) plane orientation which had about 250 nm in diameter. In addition, the areal number density of blisters increased with increasing the ion fluence under the surface temperature reaching to about 900 K. When the fluence exceeded 4.6 × 10{sup 24} D m{sup −2}, the areal number density of the blister decreased. It could be explained that the destruction of the blister was initiated by erosion at the boundary region where the thickness of blister lid was thin and the sputtering yield was high by oblique incident ions, resulting in remaining the lid open, e.g., un-eroded center dome. It is possible to work as a tungsten dust formation from the plasma facing divertor material at far-SOL region of fusion reactor.

  15. Ion irradiation studies of the origins of pressurized water reactor fuel assembly deformation

    International Nuclear Information System (INIS)

    Hengstler-Eger, Rosmarie Martina

    2012-01-01

    The presented thesis studies ion irradiation damage in Zr-based alloys for pressurized water reactors to explain the origins of unexpectedly high fuel assembly growth in some plants. Transmission electron microscopy was used to investigate the effects of temperature, dose, hydrogen content of the alloy and tensile stress. A clear correlation between the stress orientation towards the crystal lattice and the density of the dislocation loops which are responsible for increased growth was found.

  16. Response of epitaxial YBa2Cu3O7 films on disorder after ion irradiation

    International Nuclear Information System (INIS)

    Saemann-Ischenko, G.; Hensel, B.; Roas, B.; Dengler, J.; Ritter, G.

    1990-01-01

    Measurements of superconducting properties, critical currents, magnetic relaxation, far infrared reflectivity (FIR) and conversion electron Mossbauer spectroscopy (CEMS) have been performed before and after ion irradiation with 25 MeV 16 O, 32 S and 173 MeV 129 Xe (in situ, ex situ or successive). The authors report essential results of this network of investigations performed for the first time on very high quality samples that were characterized to be nearly identical

  17. In-situ observation of damage evolution in TiC crystals during helium ion irradiation

    International Nuclear Information System (INIS)

    Hojou, K.; Otsu, H.; Furuno, S.; Izui, K.; Tsukamoto, T.

    1994-01-01

    In-situ observations were performed on bubble formation and growth in TiC during 20 keV helium ion irradiation over the wide range of irradiation temperatures from 12 to 1523 K. No amorphization occurred over this temperature range. The bubble densities and sizes were almost independent of irradiation temperatures from 12 to 1273 K. Remarkable growth and coalescence occurred during irradiation at high temperature above 1423 K and during annealing above 1373 K after irradiation. ((orig.))

  18. In-situ observation system for dual ion irradiation damage

    International Nuclear Information System (INIS)

    Furuno, Shigemi; Hojou, Kiichi; Otsu, Hitoshi; Sasaki, T.A.; Izui, Kazuhiko; Tukamoto, Tetsuo; Hata, Takao.

    1992-01-01

    We have developed an in-situ observation and analysis system during dual ion beam irradiation in an electron microscope. This system consists of an analytical electron microscope of JEM-4000FX type equipped with a parallel EELS and an EDS attachments and linked with two sets of ion accelerators of 40 kV. Hydrogen and helium dual-ion beam irradiation experiments were performed for SiC crystals. The result of dual-ion beam irradiation was compared with those of helium and hydrogen single ion irradiations. It is clearly seen that the dual-ion irradiation has the effect of suppressing bubble formation and growth in comparison with the case of single helium ion irradiation. (author)

  19. Folding two dimensional crystals by swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ochedowski, Oliver; Bukowska, Hanna [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Freire Soler, Victor M. [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Departament de Fisica Aplicada i Optica, Universitat de Barcelona, E08028 Barcelona (Spain); Brökers, Lara [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Ban-d' Etat, Brigitte; Lebius, Henning [CIMAP (CEA-CNRS-ENSICAEN-UCBN), 14070 Caen Cedex 5 (France); Schleberger, Marika, E-mail: marika.schleberger@uni-due.de [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany)

    2014-12-01

    Ion irradiation of graphene, the showcase model of two dimensional crystals, has been successfully applied to induce various modifications in the graphene crystal. One of these modifications is the formation of origami like foldings in graphene which are created by swift heavy ion irradiation under glancing incidence angle. These foldings can be applied to locally alter the physical properties of graphene like mechanical strength or chemical reactivity. In this work we show that the formation of foldings in two dimensional crystals is not restricted to graphene but can be applied for other materials like MoS{sub 2} and hexagonal BN as well. Further we show that chemical vapour deposited graphene forms foldings after swift heavy ion irradiation while chemical vapour deposited MoS{sub 2} does not.

  20. Folding two dimensional crystals by swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Ochedowski, Oliver; Bukowska, Hanna; Freire Soler, Victor M.; Brökers, Lara; Ban-d'Etat, Brigitte; Lebius, Henning; Schleberger, Marika

    2014-01-01

    Ion irradiation of graphene, the showcase model of two dimensional crystals, has been successfully applied to induce various modifications in the graphene crystal. One of these modifications is the formation of origami like foldings in graphene which are created by swift heavy ion irradiation under glancing incidence angle. These foldings can be applied to locally alter the physical properties of graphene like mechanical strength or chemical reactivity. In this work we show that the formation of foldings in two dimensional crystals is not restricted to graphene but can be applied for other materials like MoS 2 and hexagonal BN as well. Further we show that chemical vapour deposited graphene forms foldings after swift heavy ion irradiation while chemical vapour deposited MoS 2 does not

  1. Magnetic patterning by means of ion irradiation and implantation

    International Nuclear Information System (INIS)

    Fassbender, J.; McCord, J.

    2008-01-01

    A pure magnetic patterning by means of ion irradiation which relies on a local modification of the magnetic anisotropy of a magnetic multilayer structure has been first demonstrated in 1998. Since then also other magnetic properties like the interlayer exchange coupling, the exchange bias effect, the magnetic damping behavior and the saturation magnetization to name a few have also been demonstrated to be affected by ion irradiation or ion implantation. Consequently, all these effects can be used if combined with a masking technique or employing direct focused ion beam writing for a magnetic patterning and thus an imprinting of an artificial magnetic domain structure, which subsequently modifies the integral magnetization reversal behavior or the magnetization dynamics of the film investigated. The present review will summarize how ion irradiation and implantation can affect the magnetic properties by means of structural modifications. The main part will cover the present status with respect to the pure magnetic patterning of micro- and nano structures

  2. Effects of ion irradiation on the mechanical properties of several polymers

    International Nuclear Information System (INIS)

    Sasuga, Tsuneo; Kawanishi, Shunichi; Nishi, Masanobu; Seguchi, Tadao

    1991-01-01

    The effects of high-energy ion irradiation on the tensile properties of polymers were studied under conditions in which ions should pass completely through the specimen and the results were compared with 2 MeV electron irradiation effects. Experiments were carried out on polymers having various constituents and molecular structures, i.e. eight aliphatic polymers and four aromatic polymers. In the aliphatic polymers studied there was scarcely any difference in the dose dependence of the tensile strength and ultimate elongation between proton and electron irradiation. In the aromatic polymers, however, the decrements in the tensile strength and ultimate elongation vs proton dose were less than those for electron irradiation. In heavy-ion irradiation, the radiation damage of PE (an aliphatic polymer) decreased with increase of LET, but no obvious LET effects were observed in PES (an aromatic polymer). (author)

  3. Damage induced in semiconductors by swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Levalois, M.; Marie, P.

    1999-01-01

    The behaviour of semiconductors under swift heavy ion irradiation is different from that of metals or insulators: no spectacular effect induced by the inelastic energy loss has been reported in these materials. We present here a review of irradiation effects in the usual semiconductors (silicon, germanium and gallium arsenide). The damage is investigated by means of electrical measurements. The usual mechanisms of point defect creation can account for the experimental results. Besides, some results obtained on the wide gap semiconductor silicon carbide are reported. Concerning the irradiation effects induced by heavy ions in particle detectors, based on silicon substrate, we show that the deterioration of the detector performances can be explained from the knowledge of the substrate properties which are strongly perturbed after high doses of irradiation. Finally, some future ways of investigation are proposed. The silicon substrate is a good example to compare the irradiation effects with different particles such as electrons, neutrons and heavy ions. It is then necessary to use parameters which account for the local energy deposition, in order to describe the damage in the material

  4. Kr ion irradiation study of the depleted-uranium alloys

    Science.gov (United States)

    Gan, J.; Keiser, D. D.; Miller, B. D.; Kirk, M. A.; Rest, J.; Allen, T. R.; Wachs, D. M.

    2010-12-01

    Fuel development for the reduced enrichment research and test reactor (RERTR) program is tasked with the development of new low enrichment uranium nuclear fuels that can be employed to replace existing high enrichment uranium fuels currently used in some research reactors throughout the world. For dispersion type fuels, radiation stability of the fuel-cladding interaction product has a strong impact on fuel performance. Three depleted-uranium alloys are cast for the radiation stability studies of the fuel-cladding interaction product using Kr ion irradiation to investigate radiation damage from fission products. SEM analysis indicates the presence of the phases of interest: U(Al, Si) 3, (U, Mo)(Al, Si) 3, UMo 2Al 20, U 6Mo 4Al 43 and UAl 4. Irradiations of TEM disc samples were conducted with 500 keV Kr ions at 200 °C to ion doses up to 2.5 × 10 19 ions/m 2 (˜10 dpa) with an Kr ion flux of 10 16 ions/m 2/s (˜4.0 × 10 -3 dpa/s). Microstructural evolution of the phases relevant to fuel-cladding interaction products was investigated using transmission electron microscopy.

  5. Kr ion irradiation study of the depleted-uranium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gan, J., E-mail: Jian.Gan@inl.go [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Keiser, D.D. [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Miller, B.D. [University of Wisconsin, 1500 Engineering Drive, Madison, WI 53706 (United States); Kirk, M.A.; Rest, J. [Argonne National Laboratory, 9700 South Cass Ave., Argonne, IL 60439 (United States); Allen, T.R. [University of Wisconsin, 1500 Engineering Drive, Madison, WI 53706 (United States); Wachs, D.M. [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

    2010-12-01

    Fuel development for the reduced enrichment research and test reactor (RERTR) program is tasked with the development of new low enrichment uranium nuclear fuels that can be employed to replace existing high enrichment uranium fuels currently used in some research reactors throughout the world. For dispersion type fuels, radiation stability of the fuel-cladding interaction product has a strong impact on fuel performance. Three depleted-uranium alloys are cast for the radiation stability studies of the fuel-cladding interaction product using Kr ion irradiation to investigate radiation damage from fission products. SEM analysis indicates the presence of the phases of interest: U(Al, Si){sub 3}, (U, Mo)(Al, Si){sub 3}, UMo{sub 2}Al{sub 20}, U{sub 6}Mo{sub 4}Al{sub 43} and UAl{sub 4}. Irradiations of TEM disc samples were conducted with 500 keV Kr ions at 200 {sup o}C to ion doses up to 2.5 x 10{sup 19} ions/m{sup 2} ({approx}10 dpa) with an Kr ion flux of 10{sup 16} ions/m{sup 2}/s ({approx}4.0 x 10{sup -3} dpa/s). Microstructural evolution of the phases relevant to fuel-cladding interaction products was investigated using transmission electron microscopy.

  6. Amorphization, morphological instability and crystallization of krypton ion irradiated germanium

    International Nuclear Information System (INIS)

    Wang, L.M.; Birtcher, R.C.

    1991-01-01

    Krypton ion irradiation of crystalline Ge and subsequent thermal annealing were both carried out with in situ transmission electron microscopy observations. The temperature dependence of the amorphization dose, effect of foil thickness, morphological changes during continuous irradiation of the amorphous state as well as the effect of implanted gas have been determined. The dose of 1.5 MeV Kr required for amorphization increases with increasing temperature. At a fixed temperature, the amorphization dose is higher for thicker regions of the specimen. Continuous irradiation of amorphous Ge at room temperature results in a high density of small cavities which grow with increasing dose. Cavities do not coalesce during growth but develop into irregular-shaped holes that eventually transform the amorphous Ge into a sponge-like material. Formation of the spongy structure is independent of Kr implantation. The crystallization temperature and the morphology of recrystallized Ge depend on the Kr + dose. Voids are expelled from recrystallized Ge, while the sponge-like structure is retained after crystallization. (author)

  7. Chlorine diffusion in uranium dioxide under heavy ion irradiation

    International Nuclear Information System (INIS)

    Pipon, Y.; Bererd, N.; Moncoffre, N.; Peaucelle, C.; Toulhoat, N.; Jaffrezic, H.; Raimbault, L.; Sainsot, P.; Carlot, G.

    2007-01-01

    The radiation enhanced diffusion of chlorine in UO 2 during heavy ion irradiation is studied. In order to simulate the behaviour of 36 Cl, present as an impurity in UO 2 , 37 Cl has been implanted into the samples (projected range 200 nm). The samples were then irradiated with 63.5 MeV 127 I at two fluxes and two temperatures and the chlorine distribution was analyzed by SIMS. The results show that, during irradiation, the diffusion of the implanted chlorine is enhanced and slightly athermal with respect to pure thermal diffusion. A chlorine gain of 10% accumulating near the surface has been observed at 510 K. This corresponds to the displacement of pristine chlorine from a region of maximum defect concentration. This behaviour and the mean value of the apparent diffusion coefficient found for the implanted chlorine, around 2.5 x 10 -14 cm 2 s -1 , reflect the high mobility of chlorine in UO 2 during irradiation with fission products

  8. Chlorine diffusion in uranium dioxide under heavy ion irradiation

    Science.gov (United States)

    Pipon, Y.; Bérerd, N.; Moncoffre, N.; Peaucelle, C.; Toulhoat, N.; Jaffrézic, H.; Raimbault, L.; Sainsot, P.; Carlot, G.

    2007-04-01

    The radiation enhanced diffusion of chlorine in UO2 during heavy ion irradiation is studied. In order to simulate the behaviour of 36Cl, present as an impurity in UO2, 37Cl has been implanted into the samples (projected range 200 nm). The samples were then irradiated with 63.5 MeV 127I at two fluxes and two temperatures and the chlorine distribution was analyzed by SIMS. The results show that, during irradiation, the diffusion of the implanted chlorine is enhanced and slightly athermal with respect to pure thermal diffusion. A chlorine gain of 10% accumulating near the surface has been observed at 510 K. This corresponds to the displacement of pristine chlorine from a region of maximum defect concentration. This behaviour and the mean value of the apparent diffusion coefficient found for the implanted chlorine, around 2.5 × 10-14 cm2 s-1, reflect the high mobility of chlorine in UO2 during irradiation with fission products.

  9. Ion irradiation effect on metallic condensate adhesion to glass

    International Nuclear Information System (INIS)

    Kovalenko, V.V.; Upit, G.P.

    1984-01-01

    The ion irradiation effect on metallic condensate adhesion to glass is investigated. It has been found that in case of indium ion deposition the condensate adhesion to glass cleavages being in contact with atmosphere grows up to the level corresponding to a juvenile surface while in case of argon ion irradiation - exceeds it. It is shown that the observed adhesion growth is determined mainly by the surfwce modification comparising charge accumulation on surface, destruction of a subsurface layer and an interlayer formation in the condensate-substrate interface. The role of these factors in the course of various metals deposition is considered

  10. Progress and tendency in heavy ion irradiation mutation breeding

    International Nuclear Information System (INIS)

    Zhou Libin; Li Wenjian; Qu Ying; Li Ping

    2008-01-01

    In recent years, the intermediate energy heavy ion biology has been concerned rarely comparing to that of the low-energy ions. In this paper, we summarized the advantage of a new mutation breeding method mediated by intermediate energy heavy ion irradiations. Meanwhile, the present state of this mutation technique in applications of the breeding in grain crops, cash crops and model plants were introduced. And the preview of the heavy ion irradiations in gene-transfer, molecular marker assisted selection and spaceflight mutation breeding operations were also presented. (authors)

  11. Amorphous molecular junctions produced by ion irradiation on carbon nanotubes

    International Nuclear Information System (INIS)

    Wang Zhenxia; Yu Liping; Zhang Wei; Ding Yinfeng; Li Yulan; Han Jiaguang; Zhu Zhiyuan; Xu Hongjie; He Guowei; Chen Yi; Hu Gang

    2004-01-01

    Experiments and molecular dynamics have demonstrated that electron irradiation could create molecular junctions between crossed single-wall carbon nanotubes. Recently molecular dynamics computation predicted that ion irradiation could also join single-walled carbon nanotubes. Employing carbon ion irradiation on multi-walled carbon nanotubes, we find that these nanotubes evolve into amorphous carbon nanowires, more importantly, during the process of which various molecular junctions of amorphous nanowires are formed by welding from crossed carbon nanotubes. It demonstrates that ion-beam irradiation could be an effective way not only for the welding of nanotubes but also for the formation of nanowire junctions

  12. Report on Status of Shipment of High Fluence Austenitic Steel Samples for Characterization and Stress Corrosion Crack Testing

    Energy Technology Data Exchange (ETDEWEB)

    Clark, Scarlett R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Leonard, Keith J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-09-01

    The goal of the Mechanisms of Irradiation Assisted Stress Corrosion Cracking (IASCC) task in the LWRS Program is to conduct experimental research into understanding how multiple variables influence the crack initiation and crack growth in materials subjected to stress under corrosive conditions. This includes understanding the influences of alloy composition, radiation condition, water chemistry and metallurgical starting condition (i.e., previous cold work or heat treatments and the resulting microstructure) has on the behavior of materials. Testing involves crack initiation and growth testing on irradiated specimens of single-variable alloys in simulated Light Water Reactor (LWR) environments, tensile testing, hardness testing, microstructural and microchemical analysis, and detailed efforts to characterize localized deformation. Combined, these single-variable experiments will provide mechanistic understanding that can be used to identify key operational variables to mitigate or control IASCC, optimize inspection and maintenance schedules to the most susceptible materials/locations, and, in the long-term, design IASCC-resistant materials. In support of this research, efforts are currently underway to arrange shipment of “free” high fluence austenitic alloys available through Électricité de France (EDF) for post irradiation testing at the Oak Ridge National Laboratory (ORNL) and IASCC testing at the University of Michigan. These high fluence materials range in damage values from 45 to 125 displacements per atom (dpa). The samples identified for transport to the United States, which include nine, no-cost, 304, 308 and 316 tensile bars, were relocated from the Research Institute of Atomic Reactors (RIAR) in Dimitrovgrad, Ulyanovsk Oblast, Russia, and received at the Halden Reactor in Halden, Norway, on August 23, 2016. ORNL has been notified that a significant amount of work is required to prepare the samples for further shipment to Oak Ridge, Tennessee. The

  13. Generation of colour centres in yttria-stabilized zirconia by heavy ion irradiations in the GeV range

    International Nuclear Information System (INIS)

    Costantini, Jean-Marc; Beuneu, Francois; Schwartz, Kurt; Trautmann, Christina

    2010-01-01

    We have studied the colour centre production in yttria-stabilized zirconia (ZrO 2 :Y 3+ ) by heavy ion irradiation in the GeV range using on-line UV-visible optical absorption spectroscopy. Experiments were performed with 11.4 MeV amu -1 127 Xe, 197 Au, 208 Pb and 238 U ion irradiations at 8 K or room temperature (RT). A broad and asymmetrical absorption band peaked at a wavelength about 500 nm is recorded regardless of the irradiation parameters, in agreement with previous RT irradiations with heavy ions in the 100 MeV range. This band is de-convoluted into two broad Gaussian-shaped bands centred at photon energies about 2.4 and 3.1 eV that are respectively associated with the F + -type centres (involving a singly ionized oxygen vacancy, V O · ) and T centres (i.e. Zr 3+ in a trigonal symmetry) observed by electron paramagnetic resonance (EPR) spectroscopy. In the case of 8 K Au ion irradiation at low fluences, six bands are used at about 1.9, 2.3, 2.7, 3.1 and 4.0 eV. The three bands near 2.0-2.5 eV can be assigned to oxygen divacancies (i.e. F 2 + centres). No significant effect of the irradiation temperature is found on the widths of all absorption bands for the same ion and fluence. This is attributed to the inhomogeneous broadening arising from the static disorder due to the native charge-compensating oxygen vacancies. However, the colour centre production yield is strongly enhanced at 8 K with respect to RT. When heating irradiated samples from 8 K to RT, the extra colour centres produced at low temperature do not recover completely to the level of RT irradiation. The latter results are accounted for by an electronically driven defect recovery process.

  14. Ion irradiation as a tool for modifying the surface and optical properties of plasma polymerised thin films

    Energy Technology Data Exchange (ETDEWEB)

    Grant, Daniel S. [College of Science, Technology and Engineering, James Cook University, Townsville, Queensland 4811 (Australia); Bazaka, Kateryna [College of Science, Technology and Engineering, James Cook University, Townsville, Queensland 4811 (Australia); School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Siegele, Rainer [Institute for Environmental Research, Australian Nuclear Science and Technology Organisation, Lucas Heights, New South Wales 2234 (Australia); Holt, Stephen A. [Bragg Institute, Australian Nuclear Science and Technology Organisation, Lucas Heights, New South Wales 2234 (Australia); Jacob, Mohan V., E-mail: Mohan.Jacob@jcu.edu.au [College of Science, Technology and Engineering, James Cook University, Townsville, Queensland 4811 (Australia)

    2015-10-01

    Radio frequency (R.F.) glow discharge polyterpenol thin films were prepared on silicon wafers and irradiated with I{sup 10+} ions to fluences of 1 × 10{sup 10} and 1 × 10{sup 12} ions/cm{sup 2}. Post-irradiation characterisation of these films indicated the development of well-defined nano-scale ion entry tracks, highlighting prospective applications for ion irradiated polyterpenol thin films in a variety of membrane and nanotube-fabrication functions. Optical characterisation showed the films to be optically transparent within the visible spectrum and revealed an ability to selectively control the thin film refractive index as a function of fluence. This indicates that ion irradiation processing may be employed to produce plasma-polymer waveguides to accommodate a variety of wavelengths. XRR probing of the substrate-thin film interface revealed interfacial roughness values comparable to those obtained for the uncoated substrate’s surface (i.e., both on the order of 5 Å), indicating minimal substrate etching during the plasma deposition process.

  15. Diamond Particle Detector Properties during High Fluence Material Damage Tests and their Future Applications for Machine Protection in the LHC

    CERN Document Server

    Burkart, F; Borburgh, J; Dehning, B; Di Castro, M; Griesmayer, E; Lechner, A; Lendaro, J; Loprete, F; Losito, R; Montesano, S; Schmidt, R; Wollmann, D; Zerlauth, M

    2013-01-01

    Experience with LHC machine protection (MP) during the last three years of operation shows that the MP systems sufficiently protect the LHC against damage in case of failures leading to beam losses with a time constant exceeding 1ms. An unexpected fast beam loss mechanism, called UFOs [1], was observed, which could potentially quench superconducting magnets. For such fast losses, but also for better understanding of slower losses, an improved understanding of the loss distribution within a bunch train is required [2]. Diamond particle detectors with bunch-by-bunch resolution and high dynamic range have been developed and successfully tested in the LHC and in experiments to quantify the damage limits of LHC components. This paper will focus on experience gained in use of diamond detectors. The properties of these detectors were measured during high-fluence material damage tests in CERN’s Hi-RadMat facility. The results will be discussed and compared to the cross-calibration with FLUKA simulations. Future app...

  16. Ion-irradiation resistance of the orthorhombic Ln_2TiO_5 (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb and Dy) series

    International Nuclear Information System (INIS)

    Aughterson, Robert D.; Lumpkin, Gregory R.; Ionescu, Mihail; Reyes, Massey de los; Gault, Baptiste; Whittle, Karl R.; Smith, Katherine L.; Cairney, Julie M.

    2015-01-01

    The response of Ln_2TiO_5 (where Ln is a lanthanide) compounds exposed to high-energy ions was used to test their suitability for nuclear-based applications, under two different but complementary conditions. Eight samples with nominal stoichiometry Ln_2TiO_5 (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb and Dy), of orthorhombic (Pnma) structure were irradiated, at various temperatures, with 1 MeV Kr"2"+ ions in-situ within a transmission electron microscope. In each case, the fluence was increased until a phase transition from crystalline to amorphous was observed, termed critical dose D_c. At certain elevated temperatures, the crystallinity was maintained irrespective of fluence. The critical temperature for maintaining crystallinity, T_c, varied non-uniformly across the series. The T_c was consistently high for La, Pr, Nd and Sm_2TiO_5 before sequential improvement from Eu to Dy_2TiO_5 with T_c's dropping from 974 K to 712 K. In addition, bulk Dy_2TiO_5 was irradiated with 12 MeV Au"+ ions at 300 K, 723 K and 823 K and monitored via grazing-incidence X-ray diffraction (GIXRD). At 300 K, only amorphisation is observed, with no transition to other structures, whilst at higher temperatures, specimens retained their original structure. The improved radiation tolerance of compounds containing smaller lanthanides has previously been attributed to their ability to form radiation-induced phase transitions. No such transitions were observed here. - Highlights: • First ion-irradiation studies on a number of novel compounds including Pr_2TiO_5, Eu_2TiO_5 and Tb_2TiO_5. • Systematic in-situ ion-irradiation study of almost complete Ln_2TiO_5 series (Ln = lanthanides) with orthorhombic crystal structure type. • The first grazing incidence study of bulk irradiated Dy_2TiO_5 looking for irradiation induced phase transition.

  17. Test of Fibre Bragg Gratings samples under High Fast Neutrons Fluence

    Directory of Open Access Journals (Sweden)

    Cheymol G.

    2018-01-01

    The measurements show that for nearly all gratings the Bragg peak remains visible after the irradiation, and that Radiation Induced Bragg Wavelength Shifts (RI-BWSs vary from few pm (equivalent to an error of less than 1°C for a temperature sensor to nearly 1 nm (equivalent to 100°C depending of the FBG types. High RI-BWSs could indeed be expected when considering the huge refractive index variation and compaction of the bare fibre samples that have been measured by other techniques. Post writing thermal annealing is confirmed as a key parameter in order to obtain a more radiation tolerant FBG. Our results show that specific annealing regimes allow making FGBs suitable to perform temperature measurements in a MTR experiment.

  18. High energy radiation fluences in the ISS-USLab: Ion discrimination and particle abundances

    International Nuclear Information System (INIS)

    Zaconte, Veronica; Casolino, Marco; Di Fino, Luca; La Tessa, Chiara; Larosa, Marianna; Narici, Livio; Picozza, Piergiorgio

    2010-01-01

    The ALTEA (Anomalous Long Term Effects on Astronauts) detector was used to characterize the radiation environment inside the USLab of the International Space Station (ISS), where it measured the abundances of ions from Be to Fe. We compare the ALTEA results with Alteino results obtained in the PIRS module of the Russian segment of the ISS, and normalize to the high energy Si abundances given by Simpson. These are the first particle spectral measurements, which include ions up to Fe, performed in the USLab. The small differences observed between those made inside the USLab and the Simpson abundances can be attributed to the transport through the spacecraft hull. However, the low abundance of Fe cannot be attributed to only this process.

  19. Determination of uranium and thorium in semiconductor memory materials by high fluence neutron activation analysis

    International Nuclear Information System (INIS)

    Dyer, F.F.; Emery, J.F.; Northcutt, K.J.; Scott, R.M.

    1981-01-01

    Uranium and thorium were measured by absolute neutron activation analysis in high-purity materials used to manufacture semiconductor memories. The main thrust of the study concerned aluminum and aluminum alloys used as sources for thin film preparation, evaporated metal films, and samples from the Czochralski silicon crystal process. Average levels of U and Th were found for the source alloys to be approx. 65 and approx. 45 ppB, respectively. Levels of U and Th in silicon samples fell in the range of a few parts per trillion. Evaporated metal films contained about 1 ppB U and Th, but there is some question about these results due to the possibility of contamination

  20. Temperature annealing of tracks induced by ion irradiation of graphite

    International Nuclear Information System (INIS)

    Liu, J.; Yao, H.J.; Sun, Y.M.; Duan, J.L.; Hou, M.D.; Mo, D.; Wang, Z.G.; Jin, Y.F.; Abe, H.; Li, Z.C.; Sekimura, N.

    2006-01-01

    Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing

  1. Modeling injected interstitial effects on void swelling in self-ion irradiation experiments

    Energy Technology Data Exchange (ETDEWEB)

    Short, M.P., E-mail: hereiam@mit.edu [Dept. of Nuclear Science and Engineering, Massachusetts Institute of Technology (United States); Gaston, D.R. [Idaho National Laboratory (United States); Jin, M. [Dept. of Nuclear Science and Engineering, Massachusetts Institute of Technology (United States); Shao, L. [Dept. of Nuclear Engineering, Texas A& M University (United States); Garner, F.A. [Radiation Effects Consulting, LLC (United States)

    2016-04-01

    Heavy ion irradiations at high dose rates are often used to simulate slow and expensive neutron irradiation experiments. However, many differences in the resultant modes of damage arise due to unique aspects of heavy ion irradiation. One such difference was recently shown in pure iron to manifest itself as a double peak in void swelling, with both peaks located away from the region of highest displacement damage. In other cases involving a variety of ferritic alloys there is often only a single peak in swelling vs. depth that is located very near the ion-incident surface. We show that these behaviors arise due to a combination of two separate effects: 1) suppression of void swelling due to injected interstitials, and 2) preferential sinking of interstitials to the ion-incident surface, which are very sensitive to the irradiation temperature and displacement rate. Care should therefore be used in collection and interpretation of data from the depth range outside the Bragg peak of ion irradiation experiments, as it is shown to be more complex than previously envisioned. - Highlights: • A model of the spatially dependent point defect kinetics equations with injected interstitials has been implemented. • The results predict a double peak in the void nucleation rate, helping to explain a recent experiment. • The double peak is predicted to be evident within a narrow (+/− 30 °C) temperature window for self-irradiation of pure iron. • The ballistic damage profile may not match the resultant void swelling profile from ion irradiation experiments.

  2. Development of a High Fluence Neutron Source for Nondestructive Characterization of Nuclear Waste

    International Nuclear Information System (INIS)

    Pickrell, Mark M.

    1999-01-01

    We are addressing the need to measure nuclear wastes, residues, and spent fuel in order to process these for final disposition. For example, TRU wastes destined for the WIPP must satisfy extensive characterization criteria outlined in the Waste Acceptance Criteria, the Quality Assurance Program Plan, and the Performance Demonstration Plan. Similar requirements exist for spent fuel and residues. At present, no nondestructive assay (NDA) instrumentation is capable of satisfying all of the PDP test cycles (particularly for Remote-Handled TRU waste). One of the primary methods for waste assay is by active neutron interrogation. The objective of this project is to improve the capability of all active neutron systems by providing a higher intensity neutron source (by about a factor of 1,000) for essentially the same cost, power, and space requirements as existing systems. This high intensity neutron source is an electrostatically confined (IEC) plasma device. The IEC is a symmetric sphere that was originally developed in the 1960s as a possible fusion reactor. It operates as DT neutron generator. Although it is not likely that this device will scale to fusion reactor levels, previous experiments1 have demonstrated a neutron yield of 2 x 1010 neutrons/second on a table-top device that can be powered from ordinary laboratory circuits (9 kilowatts). Subsequently, the IEC physics has been extensively studied at the University of Illinois and other locations. We have established theoretically the basis for scaling the output up to 1 x 1011 neutrons/second. In addition, IEC devices have run for cumulative times approaching 10,000 hours, which is essential for practical application to NDA. They have been operated in pulsed and continuous mode. The essential features of the IEC plasma neutron source, compared to existing sources of the same cost, size and power consumption, are: Table 1: Present and Target Operating Parameters for Small Neutron Generators Parameter Present IEC

  3. Solute segregation and void formation in ion-irradiated vanadium-base alloys

    International Nuclear Information System (INIS)

    Loomis, B.A.; Smith, D.L.

    1985-01-01

    The radiation-induced segregation of solute atoms in the V-15Cr-5Ti alloys was determined after either single- dual-, or helium implantation followed by single-ion irradiation at 725 0 C to radiation damage levels ranging from 103 to 169 dpa. Also, the effect of irradiation temperature (600-750 0 C) on the microstructure in the V-15Cr-5Ti alloy was determined after single-ion irradiation to 200 and 300 dpa. The solute segregation results for the single- and dual-ion irradiated alloy showed that the simultaneous production of irradiation damage and deposition of helium resulted in enhanced depletion of Cr solute and enrichment of Ti, C and S solute in the near-surface layers of irradiated specimens. The observations of the irradiation-damaged microstructures in V-15Cr-5Ti specimens showed an absence of voids for irradiations of the alloy at 600-750 0 C to 200 dpa and at 725 0 C to 300 dpa. The principle effect on the microstructure of these irradiations was to induce the formation of a high density of disc-like precipitates in the vicinity of grain boundaries and intrinsic precipitates and on the dislocation structure. 8 references, 4 figures

  4. Preliminary design of the cooling system for a gas-cooled, high-fluence fast pulsed reactor (HFFPR)

    International Nuclear Information System (INIS)

    Monteith, H.C.

    1978-10-01

    The High-Fluence Fast Pulsed Reactor (HFFPR) is a research reactor concept currently being evaluated as a source for weapon effects experimentation and advanced reactor safety experiments. One of the designs under consideration is a gas-cooled design for testing large-scale weapon hardware or large bundles of full-length, fast reactor fuel pins. This report describes a conceptual cooling system design for such a reactor. The primary coolant would be helium and the secondary coolant would be water. The size of the helium-to-water heat exchanger and the water-to-water heat exchanger will be on the order of 0.9 metre (3 feet) in diameter and 3 metres (10 feet) in length. Analysis indicates that the entire cooling system will easily fit into the existing Sandia Engineering Reactor Facility (SERF) building. The alloy Incoloy 800H appears to be the best candidate for the tube material in the helium-to-water heat exchanger. Type 316 stainless steel has been recommended for the shell of this heat exchanger. Estimates place the cost of the helium-to-water heat exchanger at approximately $100,000, the water-to-water heat exchanger at approximately $25,000, and the helium pump at approximately $450,000. The overall cost of the cooling system will approach $2 million

  5. The role of DNA-protein interaction in the UV damage of T7 bacteriophage at high fluences

    International Nuclear Information System (INIS)

    Fekete, A.; Ronto, G.

    1980-01-01

    The influence of higher fluences (0.5-10 kJm -2 ) and that of phage protein coat on the UV (lambda = 254 nm) damage of T7 DNA were studied by UV difference spectroscopy. Beside the pyrimidine dimers and adducts produced also in isolated DNA in the case of intact phages and fluences exceeding 0.5 kJ m -2 other photoproducts, probably DNA-protein cross-links were identified as well. Phages deprived of their protein coat by a thermal treatment show similar UV damage to that of isolated DNA. (author)

  6. Modification of structure and optical band-gap of nc-Si:H films with ion irradiation

    International Nuclear Information System (INIS)

    Zhu Yabin; Wang Zhiguang; Sun Jianrong; Yao Cunfeng; Shen Tielong; Li Bingsheng; Wei Kongfang; Pang Lilong; Sheng Yanbin; Cui Minghuan; Li Yuanfei; Wang Ji; Zhu Huiping

    2012-01-01

    Hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated by using hot-wire chemical vapor deposition are irradiated at room temperature with 6.0 MeV Xe-ions. The irradiation fluences are 1.0 × 10 13 , 5.0 × 10 13 and 1.0 × 10 14 Xe-ions/cm 2 . The structure and optical band-gap of the irradiated films varying with ion fluence are investigated by means of X-ray diffraction, Raman and UV–Vis–NIR spectroscopes, as well as transmission electron microscopy. It is found that the crystallite size, the crystalline fraction and the optical band-gap decrease continuously with increasing the ion fluence. The crystalline fraction of the films irradiated to the fluences from 0 to 1.0 × 10 14 Xe-ions/cm 2 decreases from about 65.7% to 2.9% and the optical band-gap decreases from about 2.1 to 1.6 eV. Possible origins of the modification of the nc-Si:H films under 6.0 MeV Xe-ions irradiation are briefly discussed.

  7. Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

    International Nuclear Information System (INIS)

    Samra, Kawaljeet Singh; Thakur, Sonika; Singh, Lakhwant

    2011-01-01

    In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10 13 ions cm -2 , but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis.

  8. Research Reactor Application for Materials under High Neutron Fluence. Proceedings of an IAEA Technical Meeting (TM-34779)

    International Nuclear Information System (INIS)

    2011-05-01

    Research reactors (RRs) have played, and continue to play, a key role in the development of the peaceful uses of nuclear energy and technology. The role of the IAEA is to assist Member States in the effective utilization of these technologies in various domains of research such as fundamental and applied science, industry, human health care and environmental studies, as well as nuclear energy applications. In particular, material testing reactors (MTRs), serve as unique tools in scientific and technological development and they have quite a wide variety of applications. Today, a large range of different RR designs exist when compared with power reactors and they also have different operating modes, producing high neutron fluxes, which may be steady or pulsed. Recently, an urgent need has arisen for the development of new advanced materials, for example in the nuclear industry, where RRs offer capacities for irradiation programmes. Besides the scientific and research activities and commercial applications, RRs are also used extensively for educational training activities for scientists and engineers. This report is a compilation of outputs of an IAEA Technical Meeting (TM-34779) held on Research Reactor Application for Materials under High Neutron Fluence. The overall objective of the meeting was to review typical applications of small and medium size RRs, such as material characterization and testing, neutron physics and beam research, neutron radiography and imaging as well as isotope production and other types of non-nuclear applications. Several issues were discussed during the meeting, in particular: (1) recent development of irradiation facilities, specific irradiation programmes and their implementation; (2) effective and optimal RR operation regimes for irradiation purposes; (3) sharing of best practices and existing technical knowledge; and (4) fostering of advanced or innovative technologies, e.g. information exchange and effective collaboration. This

  9. Radiance and particle fluence

    International Nuclear Information System (INIS)

    Papiez, L.; Battista, J.J.

    1994-01-01

    The International Commission on Radiological Units and Measurements (ICRU) has defined fluence in terms of the number of the radiation particles crossing a small sampling sphere. A second definition has been proposed in which the length of track segments contained within any sampling volume are used to calculate the incident fluence. This approach is often used in Monte Carlo simulations of individual particle tracks, allowing the fluence to be scored in small volumes of any shape. In this paper we stress that the second definition generalizes the classical (ICRU) concept of fluence. We also identify the assumptions inherent in the two definitions of fluence and prove their equivalence for the case of straight-line particle trajectories. (author)

  10. Development and test validation of a computational scheme for high-fidelity fluence estimations of the Swiss BWRs

    International Nuclear Information System (INIS)

    Vasiliev, A.; Wieselquist, W.; Ferroukhi, H.; Canepa, S.; Heldt, J.; Ledergerber, G.

    2011-01-01

    One of the current objectives within reactor analysis related projects at the Paul Scherrer Institut is the establishment of a comprehensive computational methodology for fast neutron fluence (FNF) estimations of reactor pressure vessels (RPV) and internals for both PWRs and BWRs. In the recent past, such an integral calculational methodology based on the CASMO-4/SIMULATE- 3/MCNPX system of codes was developed for PWRs and validated against RPV scraping tests. Based on the very satisfactory validation results, the methodology was recently applied for predictive FNF evaluations of a Swiss PWR to support the national nuclear safety inspectorate in the framework of life-time estimations. Today, focus is at PSI given to develop a corresponding advanced methodology for high-fidelity FNF estimations of BWR reactors. In this paper, the preliminary steps undertaken in that direction are presented. To start, the concepts of the PWR computational scheme and its transfer/adaptation to BWR are outlined. Then, the modelling of a Swiss BWR characterized by very heterogeneous core designs is presented along with preliminary sensitivity studies carried out to assess the sufficient level of details required for the complex core region. Finally, a first validation test case is presented on the basis of two dosimeter monitors irradiated during two recent cycles of the given BWR reactor. The achieved computational results show a satisfactory agreement with measured dosimeter data and illustrate thereby the feasibility of applying the PSI FNF computational scheme also for BWRs. Further sensitivity/optimization studies are nevertheless necessary in order to consolidate the scheme and to ensure increasing continuously, the fidelity and reliability of the BWR FNF estimations. (author)

  11. Surface structure of Cr0.5 Ti0.5N coatings after heavy ions irradiation and annealing

    International Nuclear Information System (INIS)

    Kislitsin, Sergey; Gorlachev, Igor; Uglov, Vladimir

    2015-01-01

    Results of surface structure investigations of TiCrN coating on carbon steel after irradiation by helium, krypton and xenon heavy ions are reported in the present publication. The series of Cr50Ti50N coatings on carbon steel with thickness of 50,..., 300 nm were formed by vacuum arc deposition techniques. Specimens with TiCrN coating on carbon steel were irradiated by low energy 4 He +1 (22 keV) and 4 He +2 (40 keV) ions and high energy Xe +18 and Kr +14 ions with energy of 1.5 MeV/nucleon. Fluence of He ions was 1.0x10 17 ion.cm -2 , fluence of Xe and Kr ions was 5x10 14 -1.0x10 15 ion.cm -2 , irradiation temperature did not exceed 150 deg. C. Study of surface structure was performed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Methods of Roentgen diffractometry and Rutherford backscattering was applied for determination of structure and thickness of coating. In case of irradiation with Xe +18 and Kr +14 ions an investigation of surface morphology and structure was done after successive two hours vacuum annealing of irradiated samples at temperatures 400 deg. C, 500 deg. C and 600 deg. C. It was shown that after irradiation by Xe and Kr ions on the surface of coating convexities appear, surface density of which correlates with ion flux. In the case of Xe, ions irradiation generated convexities of spherical and elongated shape with dimensions ranging from ten to hundreds nm. In the case of Kr ions, only spherical globules were generated, dimensions of which are 10-30 nm. The most likely explanation of observed surface damage is that: convexities on the surface are generated at ion bombardment of specimens with coating. Convexities are the traces of ions passing through coating and they are due to structural reconstruction at energy release along a trajectory of ions braking. Convexities of elongated shape represent overlapping traces from two passing ions. When the projective range of Xe and Kr ions exceeds coating thickness, damage

  12. TSD current investigations in pristine and 100 MeV Ni-ion irradiated PET/0.3 PHB polymer liquid crystal

    International Nuclear Information System (INIS)

    Quamara, J.K.; Singh, Nafa; Prabhavathi, T.; Sridharbabu, Y.

    2002-01-01

    The dielectric relaxations investigations have been carried out in pristine as well as 100 MeV 58 Ni ion irradiated (PELLETRON facility, Nuclear Science Center, New Delhi) PET/0.3 PHB PLC samples. Thermally stimulated depolarization current technique (TSDC) has been employed for this purpose. The plc samples were polarized at 180 deg C under the influence of various polarizing fields following the usual method. Three current maxima are observed around 35deg, 120deg and 155degC which are ascribed as β', β and α transitions. These transitions are mainly due to the fast reacting dipoles of PHB regions, dipolar character due to carbonyl groups in PET rich phase and to the cold crystallization of PET. The results confirm the biphasic nature of this plc. The high energy irradiation influences both β and α transitions. Increase in fluence shifts the β peak as well as α peak towards higher temperature. This confirms that high energy irradiation has not only affected the carbonyl groups but has created new phases. (author)

  13. Strain buildup in GaAs due to 100 MeV Ag ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Shramana; Bhaumik, Sudipta; Panda, Jaya Kumar [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Ojha, Sunil [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Dhar, Achintya [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Kabiraj, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Roy, Anushree, E-mail: anushree@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India)

    2013-12-01

    The formation of strained layers and a non-monotonic evolution of strain in high energy (100 MeV) silver ion (Ag{sup 7+}) irradiated undoped semi-insulating GaAs are observed and analyzed using Raman scattering and high resolution X-ray diffraction (HRXRD) measurements. At low fluence, compressively strained layers are formed, whereas, with increase in fluence both compressive and tensile strains appear as observed from HRXRD measurements. Further, at low fluence, the change in compressive strain with increase in fluence is found to be sharper than what is observed at higher fluence, thereby suggesting a critical fluence value, beyond which there is a simultaneous generation and annihilation of vacancy type defects. The initial blue shift and subsequent relative red shift beyond above critical fluence in the Raman peak also qualitatively reveal non-monotonic evolution of strain in this case. Finally, we demonstrate the sensitivity of Raman spectroscopy in detecting the decrease in lattice ordering in the crystal in the low fluence regime, below the detection limit of Rutherford back-scattering channeling (c-RBS) measurements.

  14. In-situ transmission electron microscopy study of ion-irradiated copper : comparison of the temperature dependence of cascade collapse in FCC- and BCC- metals.

    Energy Technology Data Exchange (ETDEWEB)

    Daulton, T. L.

    1998-10-23

    The kinetics which drive cascade formation and subsequent collapse into point-defect clusters is investigated by analyzing the microstructure produced in situ by low fluence 100 keV Kr ion irradiations of fcc-Cu over a wide temperature range (18-873 K). The yield of collapsed point-defect clusters is demonstrated unequivocally to be temperature dependent, remaining approximately constant up to lattice temperatures of 573 K and then abruptly decreasing with increasing temperature. This drop in yield is not caused by defect loss during or following ion irradiation. This temperature dependence can be explained by a thermal spike effect. These in-situ yield measurements are compared to previous ex-situ yield measurements in fcc-Ni and bcc-Mo.

  15. In situ transmission electron microscopy study of ion-irradiated copper: comparison of the temperature dependence of cascade collapse in fcc- and bcc-metals

    International Nuclear Information System (INIS)

    Daulton, T.L.; Kirk, M.A.; Rehn, L.E.

    2000-01-01

    The kinetics which drive cascade formation and subsequent collapse into point-defect clusters are investigated by analyzing the microstructure produced in situ by low fluence 100 keV Kr ion irradiations of fcc-Cu over a wide temperature range (18-873 K). The yield of collapsed point-defect clusters is demonstrated unequivocally to be temperature dependent, remaining approximately constant up to lattice temperatures of 573 K and then abruptly decreasing with increasing temperature. This drop in yield is not caused by defect loss during or following ion irradiation. In addition, this temperature dependence can be explained by a thermal spike effect. These in situ yield measurements are compared to previous ex situ yield measurements in fcc-Ni and bcc-Mo

  16. The refractive index distributions of KTP crystal waveguides formed with He-ions at high fluences and low energy

    International Nuclear Information System (INIS)

    Yin, Jiao-Jian; Lu, Fei; Ming, Xian-Bing; Ma, Yu-Jie

    2013-01-01

    The 300 keV He + ions have been implanted into z-cut KTP crystals with fluences of 4 × 10 16 , 6 × 10 16 , 8 × 10 16 and 10 × 10 16 ions/cm 2 . The Rutherford back scattering spectrometry (RBS)/channelling spectra of KTP crystals and the dark-mode spectrum have been measured. According to the multiple scattering formulae of Feldman and Rodgers, the damage profiles of z-cut KTP crystals have been calculated and extracted. The relations between the damage ratio, fluence and the ion-implanted depth have been established. The refractive index profiles over depth have been calculated, which are very close to the real distribution in waveguide

  17. BPW34 Commercial p-i-n Diodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring

    CERN Document Server

    Ravotti, F; Moll, M; Saigne, F

    2008-01-01

    The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.

  18. Novel myopic refractive correction with transepithelial very high-fluence collagen cross-linking applied in a customized pattern: early clinical results of a feasibility study

    Directory of Open Access Journals (Sweden)

    Kanellopoulos AJ

    2014-04-01

    Full Text Available Anastasios John Kanellopoulos LaserVision.gr Institute, Athens, Greece, and New York Medical School, New York, NY, USA Background: The purpose of this study is to report the safety and efficacy of a new application of collagen cross-linking using a novel device to achieve predictable refractive myopic changes in virgin corneas. Methods: Four cases were treated with a novel device employing very high-fluence collagen cross-linking applied in a myopic pattern. Prior to treatment, riboflavin solution was applied to the intact epithelium. The collagen cross-linking device was then engaged for a total of 12 J/cm2, to be applied transepithelially in a predetermined pattern. Cornea clarity, corneal keratometry, and corneal topography were evaluated by both Placido disc and Scheimpflug imaging, along with cornea anterior segment optical coherence tomography and endothelial cell counts. Results: An average of 2.3 diopters was achieved in the first week in all four cases treated with the very high-fluence myopic collagen cross-linking intervention. There was a slight regression to 1.44 diopters at 1 month, which remained stable at 6-month follow-up. The mean keratometry change was from 44.90 diopters to 43.46 diopters. There was no significant change in endothelial cell counts or corneal clarity. There was some mild change in epithelial thickness distribution, with the treated area showing a slight but homogeneous reduction in mean thickness from 52 µm to 44 µm. Conclusion: This report describes the novel application of very high-fluence collagen cross-linking with a predictable well defined myopic refractive (flattening corneal effect. This technique has the advantages of essentially no postoperative morbidity, immediate visual rehabilitation, and the potential for tapering until the desired result is achieved. Keywords: myopia, refractive correction, high-fluence collagen cross-linking, clinical results

  19. Full-fluence tests of experimental thermosetting fuel rods for the high-temperature gas-cooled reactor

    International Nuclear Information System (INIS)

    Bullock, R.E.

    1981-01-01

    The irradiation performance of injected thermosetting fuel rods is compared to that of standard pitch-temperature gas-cooled reactor requirements. The primary objective of the experiments reported here was to obtain additional irradiation data at higher fluences for resin-based rods with intermediate binder char contents within the 15 to 30 wt% ''window of acceptability'' that had been previously established. 12 refs

  20. Hydrogen retention in ion irradiated steels

    International Nuclear Information System (INIS)

    Hunn, J.D.; Lewis, M.B.; Lee, E.H.

    1998-01-01

    In the future 1--5 MW Spallation Neutron Source, target radiation damage will be accompanied by high levels of hydrogen and helium transmutation products. The authors have recently carried out investigations using simultaneous Fe/He,H multiple-ion implantations into 316 LN stainless steel between 50 and 350 C to simulate the type of radiation damage expected in spallation neutron sources. Hydrogen and helium were injected at appropriate energy and rate, while displacement damage was introduced by nuclear stopping of 3.5 MeV Fe + , 1 microm below the surface. Nanoindentation measurements showed a cumulative increase in hardness as a result of hydrogen and helium injection over and above the hardness increase due to the displacement damage alone. TEM investigation indicated the presence of small bubbles of the injected gases in the irradiated area. In the current experiment, the retention of hydrogen in irradiated steel was studied in order to better understand its contribution to the observed hardening. To achieve this, the deuterium isotope ( 2 H) was injected in place of natural hydrogen ( 1 H) during the implantation. Trapped deuterium was then profiled, at room temperature, using the high cross-section nuclear resonance reaction with 3 He. Results showed a surprisingly high concentration of deuterium to be retained in the irradiated steel at low temperature, especially in the presence of helium. There is indication that hydrogen retention at spallation neutron source relevant target temperatures may reach as high as 10%

  1. Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kanagasekaran, T. [Department of Physics, Anna University, Chennai 600 025 (India); Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007 (India); Mythili, P. [Department of Physics, Anna University, Chennai 600 025 (India); Bhagavannarayana, G. [Materials Characterization Division, National Physical Laboratory, New Delhi 110012 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110 067 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600 025 (India)], E-mail: krgkrishnan@annauniv.edu

    2009-08-01

    The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

  2. Microstructural evolution in dual-ion irradiated 316SS under various helium injection schedules

    International Nuclear Information System (INIS)

    Kohyama, A.; Igata, N.; Ayrault, G.; Tokyo Univ.

    1984-01-01

    Dual-ion irradiated 316 SS samples with various helium injection schedules were studied. The intent of using different schedules was to either approximate the MFR condition, mimic the mixed spectrum reactor condition or mimic the fast reactor condition. The objective of this investigation is to study the influence of these different helium injection schedules on the microstructural development under irradiation. The materials for this study was 316 SS (MFE heat) with three thermomechanical pre-irradiation treatments: solution annealed, solution annealed and aged and 20% cold worked. The cavity nucleation and growth stages were investigated using high resolution TEM. (orig.)

  3. Application of low-cost Gallium Arsenide light-emitting-diodes as kerma dosemeter and fluence monitor for high-energy neutrons

    International Nuclear Information System (INIS)

    Mukherjee, B.; Simrock, S.; Khachan, J.; Rybka, D.; Romaniuk, R.

    2007-01-01

    Displacement damage (DD) caused by fast neutrons in unbiased Gallium Arsenide (GaAs) light emitting diodes (LED) resulted in a reduction of the light output. On the other hand, a similar type of LED irradiated with gamma rays from a 60 Co source up to a dose level in excess of 1.0 kGy (1.0 x 10 5 rad) was found to show no significant drop of the light emission. This phenomenon was used to develop a low cost passive fluence monitor and kinetic energy released per unit mass dosemeter for accelerator-produced neutrons. These LED-dosemeters were used to assess the integrated fluence of photoneutrons, which were contaminated with a strong Bremsstrahlung gamma-background generated by the 730 MeV superconducting electron linac driving the free electron laser in Hamburg (FLASH) at Deutsches Elektronen-Synchrotron. The applications of GaAs LED as a routine neutron fluence monitor and DD precursor for the electronic components located in high-energy accelerator environment are highlighted. (authors)

  4. Ultrafine tungsten as a plasma-facing component in fusion devices: effect of high flux, high fluence low energy helium irradiation

    International Nuclear Information System (INIS)

    El-Atwani, O.; Gonderman, Sean; Allain, J.P.; Efe, Mert; Klenosky, Daniel; Qiu, Tian; De Temmerman, Gregory; Morgan, Thomas; Bystrov, Kirill

    2014-01-01

    This work discusses the response of ultrafine-grained tungsten materials to high-flux, high-fluence, low energy pure He irradiation. Ultrafine-grained tungsten samples were exposed in the Pilot-PSI (Westerhout et al 2007 Phys. Scr. T128 18) linear plasma device at the Dutch Institute for Fundamental Energy Research (DIFFER) in Nieuwegein, the Netherlands. The He flux on the tungsten samples ranged from 1.0 × 10 23 –2.0 × 10 24  ions m −2  s −1 , the sample bias ranged from a negative (20–65) V, and the sample temperatures ranged from 600–1500 °C. SEM analysis of the exposed samples clearly shows that ultrafine-grained tungsten materials have a greater fluence threshold to the formation of fuzz by an order or magnitude or more, supporting the conjecture that grain boundaries play a major role in the mechanisms of radiation damage. Pre-fuzz damage analysis is addressed, as in the role of grain orientation on structure formation. Grains of (1 1 0) and (1 1 1) orientation showed only pore formation, while (0 0 1) oriented grains showed ripples (higher structures) decorated with pores. Blistering at the grain boundaries is also observed in this case. In situ TEM analysis during irradiation revealed facetted bubble formation at the grain boundaries likely responsible for blistering at this location. The results could have significant implications for future plasma-burning fusion devices given the He-induced damage could lead to macroscopic dust emission into the fusion plasma. (paper)

  5. 130 MeV Au ion irradiation induced dewetting on In{sub 2}Te{sub 3} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Matheswaran, P.; Abhirami, K.M.; Gokul, B. [Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Sathyamoorthy, R., E-mail: rsathya1959@gmail.com [Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Prakash, Jai [Department of Chemistry, M.M.H. College, Ghaziabad 201001 (India); Asokan, K.; Kanjilal, D. [Materials Science Division, Inter University Accelerator Centre, New Delhi 110067 (India)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer In{sub 2}Te{sub 3} phase formed from In/Te bilayer by 130 MeV Au ion irradiation. Black-Right-Pointing-Pointer Lower fluence results mixed phases with initial state of dewetting. Black-Right-Pointing-Pointer At higher fluence, In{sub 2}Te{sub 3} phase with complete dewetting pattern is formed. Black-Right-Pointing-Pointer Thermal spike model is used to explain the inter face mixing phenomena. Black-Right-Pointing-Pointer SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 Multiplication-Sign 10{sup 13} ions/cm{sup 2}. At the higher fluence of 3 Multiplication-Sign 10{sup 13} ions/cm{sup 2}, dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

  6. Synthesis of Au nanoparticles at the surface and embedded in carbonaceous matrix by 150 keV Ar ion irradiation

    International Nuclear Information System (INIS)

    Prakash, Jai; Tripathi, Jalaj; Tripathi, A; Kumar, P; Asokan, K; Avasthi, D K; Rigato, V; Pivin, J C; Chae, Keun Hwa; Gautam, Sanjeev

    2011-01-01

    We report on synthesis of spherical Au nanoparticles at the surface and embedded in carbonaceous matrix by 150 keV Ar ion irradiation of thin Au film on polyethyleneterepthlate (PET). The pristine and irradiated samples are characterized by Rutherford backscattering spectrometry (RBS), atomic force microscopy, scanning electron microscopy and transmission electron microscopy (TEM) techniques. RBS spectra reveal the sputtering of Au film and interface mixing, increasing with increasing fluence. Surface morphology shows that at the fluence of 5 x 10 15 ions cm -2 , dewetting of thin Au film begins and partially connected nanostructures are formed whereas, at the higher fluence of 5 x 10 16 ions cm -2 , isolated spherical Au nanoparticles (45 ± 20 nm) are formed at the surface. Cross-sectional TEM observations also evidence the Au nanoparticles at the surface and mixed metal-polymer region indicating the formation of nanocomposites with small Au nanoparticles. The results are explained by the crater formation, sputtering followed by dewetting of the thin Au film and interdiffusion at the interface, through molten zones due to thermal spike induced by Ar ions.

  7. Optical transmittance investigation of 1-keV ion-irradiated sapphire crystals as potential VUV to NIR window materials of fusion reactors

    Directory of Open Access Journals (Sweden)

    Keisuke Iwano

    2016-10-01

    Full Text Available We investigate the optical transmittances of ion-irradiated sapphire crystals as potential vacuum ultraviolet (VUV to near-infrared (NIR window materials of fusion reactors. Under potential conditions in fusion reactors, sapphire crystals are irradiated with hydrogen (H, deuterium (D, and helium (He ions with 1-keV energy and ∼ 1020-m-2 s-1 flux. Ion irradiation decreases the transmittances from 140 to 260 nm but hardly affects the transmittances from 300 to 1500 nm. H-ion and D-ion irradiation causes optical absorptions near 210 and 260 nm associated with an F-center and an F+-center, respectively. These F-type centers are classified as Schottky defects that can be removed through annealing above 1000 K. In contrast, He-ion irradiation does not cause optical absorptions above 200 nm because He-ions cannot be incorporated in the crystal lattice due to the large ionic radius of He-ions. Moreover, the significant decrease in transmittance of the ion-irradiated sapphire crystals from 140 to 180 nm is related to the light scattering on the crystal surface. Similar to diamond polishing, ion irradiation modifies the crystal surface thereby affecting the optical properties especially at shorter wavelengths. Although the transmittances in the VUV wavelengths decrease after ion irradiation, the transmittances can be improved through annealing above 1000 K. With an optical transmittance in the VUV region that can recover through simple annealing and with a high transparency from the ultraviolet (UV to the NIR region, sapphire crystals can therefore be used as good optical windows inside modern fusion power reactors in terms of light particle loadings of hydrogen isotopes and helium.

  8. 50 MeV, Li"3"+ - ion irradiation effect on magnetic ordering of Y"3"+ - substituted yttrium iron garnet

    International Nuclear Information System (INIS)

    Sharma, P. U.; Zankat, K. B.; Dolia, S. N.; Modi, K. B.

    2016-01-01

    This communication presents the effect of non-magnetic Y"3"+ ions substitution for magnetic Fe"3"+ ions and 50 MeV, Li"3"+ ion irradiation (fluence: 5 × 10"1"3 ions/cm"2) on magnetic ordering and Neel temperature of Y_3_+_xFe_5_-_xO_1_2 (x = 0.0, 0.2, 0.4 and 0.6) garnet system, studied by means of X-ray powder diffractometry and thermal variation of low field (0.5 Oe) ac susceptibility measurements. The un-irradiated compositions exhibit normal ferrimagnetic behavior with decrease in transition temperature (T_N) on increasing Y"3"+-concentration (x). The irradiated counterparts are characterized by tailing effect indicative of non-uniform effect of irradiation and lower value of T_N. The results have been discussed based on the weakening of magnetic exchange interactions and cumulative effect of redistribution of cations and fractional creation of localized paramagnetic centers resulting from swift heavy ion irradiation. The Neel temperatures and exchange integrals have been calculated theoretically.

  9. Super ODS steels R and D for fuel cladding on next generation nuclear systems. 8) Ion irradiation effects at elevated temperatures

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kasada, Ryuta; Kimura, Akihiko; Inoue, Masaki; Okuda, Takanari; Abe, Fujio; Ohnuki, Somei; Fujisawa, Toshiharu

    2009-01-01

    The Super ODS steels, having excellent high-temperature strength and highly corrosion resistant, are considered to increase the energy efficiency by higher temperature operation and extend the lifetime of next generation nuclear systems. High-temperature strength of the ODS steels strongly depends on the dispersion of oxide particles, therefore, the irradiation effect on the dispersed oxides is critical in the material development. In the present research, ion irradiation experiments were employed to investigate microstructural stability under the irradiation environment at elevated temperatures. Ion irradiation experiments were performed with 6.4 MeV Fe ions irradiated at 650degC up to a nominal displacement damage of 60 dpa. Microstructural investigation was carried out using TEM and EDX. No significant change of grains and grain boundaries was observed by TEM investigation after the ion irradiation. Main oxide particles in the 16Cr-4Al-0.1Ti (SOC-1) ODS steel were (Y, Al) complex oxides. (Y, Ti) complex oxides were in 16Cr-0.1Ti (SOC-5) and 15.5Cr-2W-0.1Ti (SOCP-3). (Y, Zr) complex oxides were in 15.5Cr-4Al-0.6Zr (SOCP-1). No significant modification of these complex oxides was detected after the ion irradiation up to 60 dpa at 650degC. The stable complex oxides are considered to keep highly microstructural stability of the Super ODS steels under the irradiation environments. (author)

  10. Development and performance evaluation of a three-dimensional clinostat synchronized heavy-ion irradiation system

    Science.gov (United States)

    Ikeda, Hiroko; Souda, Hikaru; Puspitasari, Anggraeini; Held, Kathryn D.; Hidema, Jun; Nikawa, Takeshi; Yoshida, Yukari; Kanai, Tatsuaki; Takahashi, Akihisa

    2017-02-01

    Outer space is an environment characterized by microgravity and space radiation, including high-energy charged particles. Astronauts are constantly exposed to both microgravity and radiation during long-term stays in space. However, many aspects of the biological effects of combined microgravity and space radiation remain unclear. We developed a new three-dimensional (3D) clinostat synchronized heavy-ion irradiation system for use in ground-based studies of the combined exposures. Our new system uses a particle accelerator and a respiratory gating system from heavy-ion radiotherapy to irradiate samples being rotated in the 3D clinostat with carbon-ion beams only when the samples are in the horizontal position. A Peltier module and special sample holder were loaded on a static stage (standing condition) and the 3D clinostat (rotation condition) to maintain a suitable temperature under atmospheric conditions. The performance of the new device was investigated with normal human fibroblasts 1BR-hTERT in a disposable closed cell culture chamber. Live imaging revealed that cellular adhesion and growth were almost the same for the standing control sample and rotation sample over 48 h. Dose flatness and symmetry were judged according to the relative density of Gafchromic films along the X-axis and Y-axis of the positions of the irradiated sample to confirm irradiation accuracy. Doses calculated using the carbon-ion calibration curve were almost the same for standing and rotation conditions, with the difference being less than 5% at 1 Gy carbon-ion irradiation. Our new device can accurately synchronize carbon-ion irradiation and simulated microgravity while maintaining the temperature under atmospheric conditions at ground level.

  11. Atom probe tomography of the evolution of the nanostructure of oxide dispersion strengthened steels under ion irradiation

    Science.gov (United States)

    Orlov, N. N.; Rogozhkin, S. V.; Bogachev, A. A.; Korchuganova, O. A.; Nikitin, A. A.; Zaluzhnyi, A. G.; Kozodaev, M. A.; Kulevoy, T. V.; Kuibeda, R. P.; Fedin, P. A.; Chalykh, B. B.; Lindau, R.; Hoffmann, Ya.; Möslang, A.; Vladimirov, P.

    2017-09-01

    The atom probe tomography of the nanostructure evolution in ODS1 Eurofer, ODS 13.5Cr, and ODS 13.5Cr-0.3Ti steels under heavy ion irradiation at 300 and 573 K is performed. The samples were irradiated by 5.6 MeV Fe2+ ions and 4.8 MeV Ti2+ ions to a fluence of 1015 cm-2. It is shown that the number of nanoclusters increases by a factor of 2-3 after irradiation. The chemical composition of the clusters in the steels changes after irradiation at 300 K, whereas the chemical composition of the clusters in the 13.5Cr-0.3Ti ODS steel remains the same after irradiation at 573 K.

  12. Tunable electronic, electrical and optical properties of graphene oxide sheets by ion irradiation

    Science.gov (United States)

    Jayalakshmi, G.; Saravanan, K.; Panigrahi, B. K.; Sundaravel, B.; Gupta, Mukul

    2018-05-01

    The tunable electronic, electrical and optical properties of graphene oxide (GO) sheets were investigated using a controlled reduction by 500 keV Ar+-ion irradiation. The carbon to oxygen ratio of the GO sheets upon the ion beam reduction has been estimated using resonant Rutherford backscattering spectrometry analyses and its effect on the electrical and optical properties of GO sheets has been studied using sheet resistance measurements and photoluminescence (PL) measurements. The restoration of sp 2-hybridized carbon atoms within the sp 3 matrix is found to be increases with increasing the Ar+-ion fluences as evident from Fourier transform infrared, and x-ray absorption near-edge structure measurements. The decrease in the number of disorder-induced local density of states (LDOSs) within the π-π* gap upon the reduction causes the shifting of PL emission from near infra-red to blue region and decreases the sheet resistance. The improved electrical and optical properties of GO sheets were correlated to the decrease in the number of LDOSs within the π-π* gap. Our experimental investigations suggest ion beam irradiation is one of an effective approaches to reduce GO to RGO and to tailor its electronic, electrical and optical properties.

  13. The thermal-spike model description of the ion-irradiated polyimide

    International Nuclear Information System (INIS)

    Sun Youmei; Zhang Chonghong; Zhu Zhiyong; Wang Zhiguang; Jin Yunfan; Liu Jie; Wang Ying

    2004-01-01

    To describe the role of electronic energy loss (dE/dX) e for chemical modification of polyimide (PI), multi-layer stacks (corresponding to different dE/dX) were irradiated by different swift heavy ions (1.158 GeV Fe 56 and 1.755 GeV Xe 136 ) under vacuum and at room temperature. Chemical changes of modified PI films were studied by Fourier transform infrared (FTIR) spectroscopy. The chain disruption rate of PI was investigated in the fluence range from 1 x 10 11 to 6 x 10 12 ions/cm 2 and a wider energy stopping power range (2.2-5.1 keV/nm for Fe 56 ions and 8.6-11.5 keV/nm for Xe 136 ions). Alkyne formation was observed over the electronic energy loss range of interest. By applying the saturated track model assumption (the damage process only occur in a cylinder of area σ), the mean degradation and alkyne formation radii in tracks were induced for Fe and Xe ion irradiation, respectively. The results were validated by the thermal-spike model. The analysis of the irradiated PI films shows that the predictions of the thermal-spike model of Szenes are in qualitative agreement with the curve shape of experimental results

  14. Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

    International Nuclear Information System (INIS)

    Chowdhury, S.; Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

    2008-01-01

    The present study compares structural and optical modifications of bare and silica (SiO 2 ) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni 12+ ion beam with fluences 10 12 to 10 13 ions/cm 2 . Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one

  15. Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2015-12-15

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation

    Science.gov (United States)

    Yuan, Ye; Amarouche, Teyri; Xu, Chi; Rushforth, Andrew; Böttger, Roman; Edmonds, Kevin; Campion, Richard; Gallagher, Bryan; Helm, Manfred; Jürgen von Bardeleben, Hans; Zhou, Shengqiang

    2018-04-01

    In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion irradiation. According to the micro-magnetic parameters, e.g. resonance fields and anisotropy constants deduced from ferromagnetic resonance measurements, a rotation of the magnetic easy axis from out-of-plane [0 0 1] to in-plane [1 0 0] direction is achieved. From the application point of view, our work presents a novel avenue in modifying the uniaxial magnetic anisotropy in GaMnAsP with the possibility of lateral patterning by using lithography or focused ion beam.

  17. Disintegration of C60 by Xe ion irradiation

    International Nuclear Information System (INIS)

    Kalish, R.; Samoiloff, A.; Hoffman, A.; Uzan-Saguy, C.

    1993-01-01

    The Changes in resistivity of fullerene (C 60 ) films subject to 320 keV Xe ion irradiation are investigated as a function of ion dose. From a comparison of this dependence with similar data on other Xe irradiated C containing insulating materials and with data on C implanted fused quartz, it is concluded that upon ion impact C 60 clusters completely disintegrate. This disintegration releases about 60 C atoms which disperse amongst the remaining intact C 60 spheres giving rise to hopping conductivity between isolated C atoms. 16 refs., 3 figs

  18. The effect of ion irradiation on inert gas bubble mobility

    International Nuclear Information System (INIS)

    Alexander, D.E.; Birtcher, R.C.

    1991-09-01

    The effect of Al ion irradiation on the mobility of Xe gas bubbles in Al thin films was investigated. Transmission electron microscopy was used to determine bubble diffusivities in films irradiated and/or annealed at 673K, 723K and 773K. Irradiation increased bubble diffusivity by a factor of 2--9 over that due to thermal annealing alone. The Arrhenius behavior and dose rate dependence of bubble diffusivity are consistent with a radiation enhanced diffusion phenomenon affecting a volume diffusion mechanism of bubble transport. 9 refs., 3 figs., 2 tabs

  19. Accumulation of dislocation loops in the α phase of Zr Excel alloy under heavy ion irradiation

    Science.gov (United States)

    Yu, Hongbing; Yao, Zhongwen; Idrees, Yasir; Zhang, He K.; Kirk, Mark A.; Daymond, Mark R.

    2017-08-01

    In-situ heavy ion irradiations were performed on the high Sn content Zr alloy 'Excel', measuring type dislocation loop accumulation up to irradiation damage doses of 10 dpa at a range of temperatures. The high content of Sn, which diffuses slowly, and the thin foil geometry of the sample provide a unique opportunity to study an extreme case where displacement cascades dominate the loop formation and evolution. The dynamic observation of dislocation loop evolution under irradiation at 200 °C reveals that type dislocation loops can form at very low dose (0.0025 dpa). The size of the dislocation loops increases slightly with irradiation damage dose. The mechanism controlling loop growth in this study is different from that in neutron irradiation; in this study, larger dislocation loops can condense directly from the interaction of displacement cascades and the high concentration of point defects in the matrix. The size of the dislocation loop is dependent on the point defect concentration in the matrix. A negative correlation between the irradiation temperature and the dislocation loop size was observed. A comparison between cascade dominated loop evolution (this study), diffusion dominated loop evolution (electron irradiation) and neutron irradiation suggests that heavy ion irradiation alone may not be enough to accurately reproduce neutron irradiation induced loop structures. An alternative method is proposed in this paper. The effects of Sn on the displacement cascades, defect yield, and the diffusion behavior of point defects are established.

  20. Evidence of amorphous interdiffusion layer in heavy ion irradiated U–8wt%Mo/Al interfaces

    International Nuclear Information System (INIS)

    Chiang, H-Y.; Zweifel, T.; Palancher, H.; Bonnin, A.; Beck, L.; Weiser, P.; Döblinger, M.; Sabathier, C.; Jungwirth, R.; Petry, W.

    2013-01-01

    U–Mo/Al based nuclear fuels are worldwide considered as the most promising high density fuel for the conversion of high flux research and test reactors from highly enriched uranium to lower enrichment. However in-pile growth of an amorphous interdiffusion layer at the U–Mo/Al interfaces strongly limits the performances of this fuel. Several in-pile tests have been performed to optimize the composition. In this paper, a breakthrough in simulating the U–8wt%Mo/Al behavior under out-of-pile irradiation is reported. It is shown that an amorphous U–8wt%Mo/Al interdiffusion layer (IDL) is obtained by heavy ion irradiation ( 127 I) in a U–Mo/Al diffusion couple under controlled temperature conditions. The properties of this IDL coincide with the results obtained from in-pile tests. This methodological work clearly indicates that heavy ion irradiations could be routinely applied for optimizing composition of U–Mo/Al nuclear fuels. In other words these out-of-pile tests using ion beams could become a representative, efficient and economic step before in-pile irradiation

  1. Evidence of amorphous interdiffusion layer in heavy ion irradiated U–8wt%Mo/Al interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Chiang, H-Y. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany); Zweifel, T. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany); CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Palancher, H., E-mail: herve.palancher@cea.fr [CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Bonnin, A. [ESRF, 6 rue Jules Horowitz, 38042 Grenoble (France); Beck, L. [Tandembeschleuniger des Maier-Leibnitz-Labors (MLL), Am Coulombwall 6, D-85747 Garching (Germany); Weiser, P. [Walther Schottky Institut, Technische Universität München, Am Coulombwall 4, D-85747 Garching (Germany); Döblinger, M. [Department Chemie, Ludwig-Maximilians-Universität München (LMU), Butenandstr. 11, D-81377 München (Germany); Sabathier, C. [CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Jungwirth, R.; Petry, W. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany)

    2013-09-15

    U–Mo/Al based nuclear fuels are worldwide considered as the most promising high density fuel for the conversion of high flux research and test reactors from highly enriched uranium to lower enrichment. However in-pile growth of an amorphous interdiffusion layer at the U–Mo/Al interfaces strongly limits the performances of this fuel. Several in-pile tests have been performed to optimize the composition. In this paper, a breakthrough in simulating the U–8wt%Mo/Al behavior under out-of-pile irradiation is reported. It is shown that an amorphous U–8wt%Mo/Al interdiffusion layer (IDL) is obtained by heavy ion irradiation ({sup 127}I) in a U–Mo/Al diffusion couple under controlled temperature conditions. The properties of this IDL coincide with the results obtained from in-pile tests. This methodological work clearly indicates that heavy ion irradiations could be routinely applied for optimizing composition of U–Mo/Al nuclear fuels. In other words these out-of-pile tests using ion beams could become a representative, efficient and economic step before in-pile irradiation.

  2. Production and aging of paramagnetic point defects in P-doped floating zone silicon irradiated with high fluence 27 MeV electrons

    Science.gov (United States)

    Joita, A. C.; Nistor, S. V.

    2018-04-01

    Enhancing the long term stable performance of silicon detectors used for monitoring the position and flux of the particle beams in high energy physics experiments requires a better knowledge of the nature, stability, and transformation properties of the radiation defects created over the operation time. We report the results of an electron spin resonance investigation in the nature, transformation, and long term stability of the irradiation paramagnetic point defects (IPPDs) produced by high fluence (2 × 1016 cm-2), high energy (27 MeV) electrons in n-type, P-doped standard floating zone silicon. We found out that both freshly irradiated and aged (i.e., stored after irradiation for 3.5 years at 250 K) samples mainly contain negatively charged tetravacancy and pentavacancy defects in the first case and tetravacancy defects in the second one. The fact that such small cluster vacancy defects have not been observed by irradiation with low energy (below 5 MeV) electrons, but were abundantly produced by irradiation with neutrons, strongly suggests the presence of the same mechanism of direct formation of small vacancy clusters by irradiation with neutrons and high energy, high fluence electrons, in agreement with theoretical predictions. Differences in the nature and annealing properties of the IPPDs observed between the 27 MeV electrons freshly irradiated, and irradiated and aged samples were attributed to the presence of a high concentration of divacancies in the freshly irradiated samples, defects which transform during storage at 250 K through diffusion and recombination processes.

  3. Mutation effects of C2+ ion irradiation on the greasy Nitzschia sp

    International Nuclear Information System (INIS)

    Yang, Y.N.; Liu, C.L.; Wang, Y.K.; Xue, J.M.

    2013-01-01

    Highlights: • The optimal conditions of C 2+ ion irradiation on Nitzschia sp. were discussed. • Get the “saddle type” survival curve. • One mutant whose lipid content improved significantly was selected. • The C 2+ ion irradiation didn’t change the algae's morphology and growth rate. - Abstract: Screening and nurturing algae with high productivity, high lipid content and strong stress resistance are very important in algae industry. In order to increase the lipid content, the Nitzschia sp. was irradiated with a 3 MeV C 2+ beam. The sample pretreatment method was optimized to obtain the best mutagenic condition and the survival ratio curve. The positive mutants with a significant improvement in lipid content were screened and their C 2+ mutagenic effects were analyzed by comparing the greasiness and growth characteristics with the wild type algae. Results showed that when the Nitzschia sp. was cultivated in nutritious medium containing 10% glycerol solution, and dried on the filter for 5 min after centrifugation, the realization of the microalgae heavy ion mutagenesis could be done. The survival ratio curve caused by C 2+ irradiation was proved to be “saddle-shaped”. A positive mutant was screened among 20 survivals after irradiation, the average lipid content of the mutation increased by 9.8% than the wild type after 4 generations. But the growth rate of the screened mutation didn’t change after the heavy ion implantation compared to the wild type algae

  4. Deuterium ion irradiation induced precipitation in Fe–Cr alloy: Characterization and effects on irradiation behavior

    International Nuclear Information System (INIS)

    Liu, P.P.; Yu, R.; Zhu, Y.M.; Zhao, M.Z.; Bai, J.W.; Wan, F.R.; Zhan, Q.

    2015-01-01

    Highlights: • A new phase precipitated in Fe–Cr alloy after deuterium ion irradiation at 773 K. • B2 structure was proposed for the Cr-rich new phase. • Strain fields around the precipitate have been measured by GPA. • The precipitate decrease growth rate of dislocation loop under electron irradiation. - Abstract: A new phase was found to precipitate in a Fe–Cr model alloy after 58 keV deuterium ion irradiation at 773 K. The nanoscale radiation-induced precipitate was studied systematically using high resolution transmission electron microscopy (HRTEM), image simulation and in-situ ultrahigh voltage transmission electron microscopy (HVEM). B2 structure is proposed for the new Cr-rich phase, which adopts a cube-on-cube orientation relationship with regard to the Fe matrix. Geometric phase analysis (GPA) was employed to measure the strain fields around the precipitate and this was used to explain its characteristic 1-dimensional elongation along the 〈1 0 0〉 Fe direction. The precipitate was stable under subsequent electron irradiation at different temperatures. We suggest that the precipitate with a high interface-to-volume ratio enhances the radiation resistance of the material. The reason for this is the presence of a large number of interfaces between the precipitate and the matrix, which may greatly reduce the concentration of point defects around the dislocation loops. This leads to a significant decrease in the growth rate

  5. Ion irradiation-induced stress relaxation in thin films and multilayers deposited using energetic PVD techniques

    International Nuclear Information System (INIS)

    Abadias, Gregory; Michel, Anny; Debelle, Aurelien; Jaouen, Christiane; Djemia Philippe

    2009-01-01

    The aim of the present work is to understand the stress build-up during energetic PVD film growth and the stress relaxation during subsequent ion irradiation at low dose (typically in the range 0.1-1.0 displacement per atom). Monolithic Mo thin films and Mo/Ni multilayers were grown using Dual Ion Beam Sputtering and Magnetron Sputtering at room temperature. Due to the high energy of incoming species (sputtered atoms, backscattered Ar), growth defects of interstitial-type are created during growth. The defect density can reach up to 1.4 % (far from equilibrium) in these Mo refractory layers. These defects act as misfitting particles, inducing a hydrostatic stress component and an associated in-plane compressive stress component. However, after Ar ion irradiation at low dose (∼0.2 dpa), most of the stress is relieved, showing that the growth induced defects are highly unstable. For Ni layers, the compressive stress is much lower due to the higher bulk atom mobility in this metal, making annihilation of defects more effective. An intermixing occurring mainly at the Mo/Ni interfaces is revealed from a complete strain-stress analysis using X-ray Diffraction. The magnitude of this interfacial alloying is found to increase with the energetics of the PVD process and is at the origin of the huge softening of the C 4 4 elastic constant, as measured using Brillouin light scattering. (authors)

  6. Heavy ion irradiations on synthetic hollandite-type materials: Ba{sub 1.0}Cs{sub 0.3}A{sub 2.3}Ti{sub 5.7}O{sub 16} (A=Cr, Fe, Al)

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Ming, E-mail: mtang@lanl.gov [Materials Science & Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Tumurugoti, Priyatham; Clark, Braeden; Sundaram, S.K. [Kazuo Inamori School of Engineering, The New York State College of Ceramics, Alfred University, Alfred, NY 14802 (United States); Amoroso, Jake; Marra, James [Materials Science & Technology Directorate, Savannah River National Laboratory, Aiken, SC 29808 (United States); Sun, Cheng [Materials Science & Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Lu, Ping [Sandia National Laboratories, Albuquerque, NM 87185 (United States); Wang, Yongqiang [Materials Science & Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Jiang, Ying-Bing [TEM Laboratory, University of New Mexico, Albuquerque, NM 87131 (United States)

    2016-07-15

    The hollandite supergroup of minerals has received considerable attention as a nuclear waste form for immobilization of Cs. The radiation stability of synthetic hollandite-type compounds described generally as Ba{sub 1.0}Cs{sub 0.3}A{sub 2.3}Ti{sub 5.7}O{sub 16} (A=Cr, Fe, Al) were evaluated by heavy ion (Kr) irradiations on polycrystalline single phase materials and multiphase materials incorporating the hollandite phases. Ion irradiation damage effects on these samples were examined using grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). Single phase compounds possess tetragonal structure with space group I4/m. GIXRD and TEM observations revealed that 600 keV Kr irradiation-induced amorphization on single phase hollandites compounds occurred at a fluence between 2.5×10{sup 14} Kr/cm{sup 2} and 5×10{sup 14} Kr/cm{sup 2}. The critical amorphization fluence of single phase hollandite compounds obtained by in situ 1 MeV Kr ion irradiation was around 3.25×10{sup 14} Kr/cm{sup 2}. The hollandite phase exhibited similar amorphization susceptibility under Kr ion irradiation when incorporated into a multiphase system. - Graphical abstract: 600 keV Kr irradiation-induced amorphization on single phase hollandites compounds occurred at a fluence between 2.5×10{sup 14} Kr/cm{sup 2} and 5×10{sup 14} Kr/cm{sup 2}. The hollandite phase exhibited similar amorphization susceptibility under Kr ion irradiation when incorporated into a multiphase system. This is also the first time that the critical amorphization fluence of single phase hollandite compounds were determined at a fluence of around 3.25×10{sup 14} Kr/cm{sup 2} by in situ 1 MeV Kr ion irradiation. Display Omitted.

  7. Fluence map segmentation

    International Nuclear Information System (INIS)

    Rosenwald, J.-C.

    2008-01-01

    The lecture addressed the following topics: 'Interpreting' the fluence map; The sequencer; Reasons for difference between desired and actual fluence map; Principle of 'Step and Shoot' segmentation; Large number of solutions for given fluence map; Optimizing 'step and shoot' segmentation; The interdigitation constraint; Main algorithms; Conclusions on segmentation algorithms (static mode); Optimizing intensity levels and monitor units; Sliding window sequencing; Synchronization to avoid the tongue-and-groove effect; Accounting for physical characteristics of MLC; Importance of corrections for leaf transmission and offset; Accounting for MLC mechanical constraints; The 'complexity' factor; Incorporating the sequencing into optimization algorithm; Data transfer to the treatment machine; Interface between R and V and accelerator; and Conclusions on fluence map segmentation (Segmentation is part of the overall inverse planning procedure; 'Step and Shoot' and 'Dynamic' options are available for most TPS (depending on accelerator model; The segmentation phase tends to come into the optimization loop; The physical characteristics of the MLC have a large influence on final dose distribution; The IMRT plans (MU and relative dose distribution) must be carefully validated). (P.A.)

  8. Carbon ion irradiation induced surface modification of polypropylene

    International Nuclear Information System (INIS)

    Saha, A.; Chakraborty, V.; Dutta, R.K.; Chintalapudi, S.N.

    2001-01-01

    Polypropylene was irradiated with 12 C ions of 3.6 and 5.4 MeV energies in the fluence range of 5x10 13 -5x10 14 ions/cm 2 using 3 MV tandem accelerator. Ion penetration was limited to a few microns and surface modifications were investigated by scanning electron microscopy. At the lowest ion fluence only blister formation of various sizes (1-6 μm) were observed, but at higher fluence (1x10 14 ions/cm 2 ) a three-dimensional network structure was found to form. A gradual degradation in the network structure was observed with further increase in the ion fluence. The dose dependence of the changes on surface morphology of polypropylene is discussed

  9. Carbon ion irradiation induced surface modification of polypropylene

    Energy Technology Data Exchange (ETDEWEB)

    Saha, A. E-mail: abhijit@alpha.iuc.res.in; Chakraborty, V.; Dutta, R.K.; Chintalapudi, S.N

    2001-12-01

    Polypropylene was irradiated with {sup 12}C ions of 3.6 and 5.4 MeV energies in the fluence range of 5x10{sup 13}-5x10{sup 14} ions/cm{sup 2} using 3 MV tandem accelerator. Ion penetration was limited to a few microns and surface modifications were investigated by scanning electron microscopy. At the lowest ion fluence only blister formation of various sizes (1-6 {mu}m) were observed, but at higher fluence (1x10{sup 14} ions/cm{sup 2}) a three-dimensional network structure was found to form. A gradual degradation in the network structure was observed with further increase in the ion fluence. The dose dependence of the changes on surface morphology of polypropylene is discussed.

  10. Enhanced defects recombination in ion irradiated SiC

    International Nuclear Information System (INIS)

    Izzo, G.; Litrico, G.; Grassia, F.; Calcagno, L.; Foti, G.

    2010-01-01

    Point defects induced in SiC by ion irradiation show a recombination at temperatures as low as 320 K and this process is enhanced after running current density ranging from 80 to 120 A/cm 2 . Ion irradiation induces in SiC the formation of different defect levels and low-temperature annealing changes their concentration. Some levels (S 0 , S x and S 2 ) show a recombination and simultaneously a new level (S 1 ) is formed. An enhanced recombination of defects is besides observed after running current in the diode at room temperature. The carriers introduction reduces the S 2 trap concentration, while the remaining levels are not modified. The recombination is negligible up to a current density of 50 A/cm 2 and increases at higher current density. The enhanced recombination of the S 2 trap occurs at 300 K, which otherwise requires a 400 K annealing temperature. The process can be related to the electron-hole recombination at the associated defect.

  11. Thermal stability of low dose Ga+ ion irradiated spin valves

    International Nuclear Information System (INIS)

    Qi Xianjin; Wang Yingang; Zhou Guanghong; Li Ziquan

    2009-01-01

    The thermal stability of low dose Ga + ion irradiated spin valves has been investigated and compared with that of the as-prepared ones. The dependences of exchange field, measured using vibrating sample magnetometer at room temperature, on magnetic field sweep rate and time spent at negative saturation of the pinned ferromagnetic layer, and training effect were explored. The training effect is observed on both the irradiated spin valves and the as-prepared ones. The magnetic field sweep rate dependence of the exchange bias field of the irradiated spin valves is nearly the same as that of the as-prepared ones. For the as-prepared structure thermal activation has been observed, which showed that holding the irradiated structure at negative saturation of the pinned ferromagnetic layer for up to 28 hours results in no change in the exchange field. The results indicate that the thermal stability of the ion irradiated spin valves is the same as or even better than the as-prepared ones.

  12. Effect of heavy ion irradiation on sucrose radical production

    International Nuclear Information System (INIS)

    Nakagawa, Kouichi; Sato, Yukio

    2004-01-01

    We investigated sucrose radicals produced by heavy-ion irradiation with various LETs (linear energy transfer) and the possibility for a sucrose ESR (electron spin resonance) dosimeter. The obtained spectral pattern was the same as that for helium (He) ions, carbon (C) ions, neon (Ne) ions, argon (Ar) ions, and iron (Fe) ions. Identical spectra were measured after one year, but the initial intensities decreased by a few percent when the samples were kept in ESR tubes with the caps at ambient temperature. The total spin concentration obtained by heavy-ion irradiation had a linear relation with the absorbed dose, and correlated logarithmically with the LET. Qualitative ESR analyses showed that the production of sucrose radicals depended on both the particle identity and the LET at the same dose. The production of spin concentration by He ions was the most sensitive to LET. Empirical relations between the LET and the spin yield for various particles imply that the LET at a certain dose can be estimated by the spin concentration. (authors)

  13. Corrosion characteristics of Hastelloy N alloy after He+ ion irradiation

    International Nuclear Information System (INIS)

    Lin Jianbo; Yu Xiaohan; Li Aiguo; He Shangming; Cao Xingzhong; Wang Baoyi; Li Zhuoxin

    2014-01-01

    With the goal of understanding the invalidation problem of irradiated Hastelloy N alloy under the condition of intense irradiation and severe corrosion, the corrosion behavior of the alloy after He + ion irradiation was investigated in molten fluoride salt at 700 °C for 500 h. The virgin samples were irradiated by 4.5 MeV He + ions at room temperature. First, the virgin and irradiated samples were studied using positron annihilation lifetime spectroscopy (PALS) to analyze the influence of irradiation dose on the vacancies. The PALS results showed that He + ion irradiation changed the size and concentration of the vacancies which seriously affected the corrosion resistance of the alloy. Second, the corroded samples were analyzed using synchrotron radiation micro-focused X-ray fluorescence, which indicated that the corrosion was mainly due to the dealloying of alloying element Cr in the matrix. Results from weight-loss measurement showed that the corrosion generally correlated with the irradiation dose of the alloy. (author)

  14. Heavy ion irradiation effects of brannerite-type ceramics

    International Nuclear Information System (INIS)

    Lian, J.; Wang, L.M.; Lumpkin, G.R.; Ewing, R.C.

    2002-01-01

    Brannerite, UTi 2 O 6 , occurs in polyphase Ti-based, crystalline ceramics that are under development for plutonium immobilization. In order to investigate radiation effects caused by α-decay events of Pu, a 1 MeV Kr + irradiation on UTi 2 O 6 , ThTi 2 O 6 , CeTi 2 O 6 and a more complex material, composed of Ca-containing brannerite and pyrochlore, was performed over a temperature range of 25-1020 K. The ion irradiation-induced crystalline-to-amorphous transformation was observed in all brannerite samples. The critical amorphization temperatures of the different brannerite compositions are: 970 K, UTi 2 O 6 ; 990 K, ThTi 2 O 6 ; 1020 K, CeTi 2 O 6 . The systematic increase in radiation resistance from Ce-, Th- to U-brannerite is related to the difference of mean atomic mass of A-site cation in the structure. As compared with the pyrochlore structure-type, brannerite phases are more susceptible to ion irradiation-induced amorphization. The effects of structure and chemical compositions on radiation resistance of brannerite-type and pyrochlore-type ceramics are discussed

  15. Effect of heavy ion irradiation on thermodynamically equilibrium Zr-Excel alloy

    Science.gov (United States)

    Yu, Hongbing; Liang, Jianlie; Yao, Zhongwen; Kirk, Mark A.; Daymond, Mark R.

    2017-05-01

    The thermodynamically equilibrium state was achieved in a Zr-Sn-Nb-Mo alloy by long-term annealing at an intermediate temperature. The fcc intermetallic Zr(Mo, Nb)2 enriched with Fe was observed at the equilibrium state. In-situ 1 MeV Kr2+ heavy ion irradiation was performed in a TEM to study the stability of the intermetallic particles under irradiation and the effects of the intermetallic particle on the evolution of type dislocation loops at different temperatures from 80 to 550 °C. Chemi-STEM elemental maps were made at the same particles before and after irradiation up to 10 dpa. It was found that no elemental redistribution occurs at 200 °C and below. Selective depletion of Fe was observed from some precipitates under irradiation at higher temperatures. No change in the morphology of particles and no evidence showing a crystalline to amorphous transformation were observed at all irradiation temperatures. The formation of type dislocation loops was observed under irradiation at 80 and 200 °C, but not at 450 and 550 °C. The loops were non-uniformly distributed; a localized high density of type dislocation loops were observed near the second phase particles; we suggest that loop nucleation is favored as a result of the stress induced by the particles, rather than by elemental redistribution. The stability of the second phase particles and the formation of the type loops under heavy ion irradiation are discussed.

  16. Effects of ion irradiation on the mechanical properties of SiNa wO xC yH z sol-gel derived thin films

    Science.gov (United States)

    Lucca, D. A.; Qi, Y.; Harriman, T. A.; Prenzel, T.; Wang, Y. Q.; Nastasi, M.; Dong, J.; Mehner, A.

    2010-10-01

    A study of the effects of ion irradiation of hybrid organic/inorganic modified silicate thin films on their mechanical properties is presented. NaOH catalyzed SiNa wO xC yH z thin films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 °C, the films were irradiated with 125 keV H + or 250 keV N 2+ at fluences ranging from 1 × 10 14 to 2.5 × 10 16 ions/cm 2. Nanoindentation was used to characterize the films. Changes in hardness and reduced elastic modulus were examined as a function of ion fluence and irradiating species. The resulting increases in hardness and reduced elastic modulus are compared to similarly processed acid catalyzed silicate thin films.

  17. Effects of ion irradiation on the mechanical properties of SiNawOxCyHz sol-gel derived thin films

    International Nuclear Information System (INIS)

    Lucca, D.A.; Qi, Y.; Harriman, T.A.; Prenzel, T.; Wang, Y.Q.; Nastasi, M.; Dong, J.; Mehner, A.

    2010-01-01

    A study of the effects of ion irradiation of hybrid organic/inorganic modified silicate thin films on their mechanical properties is presented. NaOH catalyzed SiNa w O x C y H z thin films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 o C, the films were irradiated with 125 keV H + or 250 keV N 2+ at fluences ranging from 1 x 10 14 to 2.5 x 10 16 ions/cm 2 . Nanoindentation was used to characterize the films. Changes in hardness and reduced elastic modulus were examined as a function of ion fluence and irradiating species. The resulting increases in hardness and reduced elastic modulus are compared to similarly processed acid catalyzed silicate thin films.

  18. High-quality planar high-Tc Josephson junctions

    International Nuclear Information System (INIS)

    Bergeal, N.; Grison, X.; Lesueur, J.; Faini, G.; Aprili, M.; Contour, J.P.

    2005-01-01

    Reproducible high-T c Josephson junctions have been made in a rather simple two-step process using ion irradiation. A microbridge (1 to 5 μm wide) is firstly designed by ion irradiating a c-axis-oriented YBa 2 Cu 3 O 7-δ film through a gold mask such as the nonprotected part becomes insulating. A lower T c part is then defined within the bridge by irradiating with a much lower fluence through a narrow slit (20 nm) opened in a standard electronic photoresist. These planar junctions, whose settings can be finely tuned, exhibit reproducible and nearly ideal Josephson characteristics. This process can be used to produce complex Josephson circuits

  19. Structural evaluation of reduced graphene oxide in graphene oxide during ion irradiation: X-ray absorption spectroscopy and in-situ sheet resistance studies

    Science.gov (United States)

    Saravanan, K.; Jayalakshmi, G.; Suresh, K.; Sundaravel, B.; Panigrahi, B. K.; Phase, D. M.

    2018-03-01

    We report the structural evolution of reduced graphene oxide (rGO) in graphene oxide (GO) flakes during 1 MeV Si+ ion irradiation. In-situ electrical resistivity measurements facilitate monitoring the sheet resistance with the increase in the fluence. The electrical sheet resistance of the GO flake shows the exponential decay behaviour with the increasing ion fluence. Raman spectra of the GO flake reveal the increase in the ID/IG ratio, indicating restoration of the sp2 network upon irradiation. The C/O ratio estimated from resonant Rutherford backscattering spectrometry analysis directly evidenced the reduction of oxygen moieties upon irradiation. C K-edge X-ray absorption near edge structure spectra reveal the restoration of C=C sp2-hybridized carbon atoms and the removal of oxygen-containing functional groups in the GO flake. STM data reveal the higher conductance in the rGO regime in comparison with the regime, where the oxygen functional groups are present. The experimental investigation demonstrates that the ion irradiation can be employed for efficient reduction of GO with tunable electrical and structural properties.

  20. MeV ion irradiation induced evolution of morphological, structural and optical properties of nanostructured SnO2 thin films

    International Nuclear Information System (INIS)

    Mohapatra, Satyabrata; Bhardwaj, Neha; Pandey, Akhilesh

    2015-01-01

    Nanostructured SnO 2 thin films were prepared by carbothermal evaporation method. Morphological, structural and optical properties of the SnO 2 thin films, before and after 8 MeV Si ion irradiation to fluences varying from 1 × 10 13 to 1 × 10 15 ions cm −2 , were well characterized using atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), Raman spectroscopy and photoluminescence spectroscopy (PL). XRD studies revealed the presence of SnO 2 and Sn nanoparticles in the as-deposited samples. AFM and FESEM studies on the irradiated samples revealed formation of nanoring-like structures, at a fluence of 1 × 10 15 ions cm −2 , with a central hole and circular rim consisting of nearly monodisperse SnO 2 nanoparticles. PL studies revealed strong enhancement in UV emissions upon 8 MeV Si ion irradiation. A growth mechanism underlying the formation of SnO 2 nanorings involving self-assembly of SnO 2 nanoparticles around nanoholes is tentatively proposed. (paper)

  1. MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2016-12-15

    The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Trapping of hydrogen isotopes in radiation defects formed in tungsten by neutron and ion irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Hatano, Y., E-mail: hatano@ctg.u-toyama.ac.jp [Hydrogen Isotope Research Center, University of Toyama, Toyama 930-8555 (Japan); Shimada, M. [Fusion Safety Program, Idaho National Laboratory, Idaho Falls, ID 83415 (United States); Alimov, V.Kh.; Shi, J.; Hara, M.; Nozaki, T. [Hydrogen Isotope Research Center, University of Toyama, Toyama 930-8555 (Japan); Oya, Y.; Kobayashi, M.; Okuno, K. [Faculty of Science, Shizuoka University, Shizuoka 422-8529 (Japan); Oda, T. [Department of Nuclear Engineering and Management, The University of Tokyo, Tokyo 113-8656 (Japan); Cao, G. [Department of Engineering Physics, The University of Wisconsin, Madison, WI 53706 (United States); Yoshida, N.; Futagami, N. [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan); Sugiyama, K.; Roth, J.; Tyburska-Püschel, B.; Dorner, J. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Takagi, I. [Department of Nuclear Engineering, Kyoto University, Kyoto 606-8501 (Japan); Hatakeyama, M.; Kurishita, H. [Institute for Materials Research, Tohoku University, Oarai 311-1313 (Japan); and others

    2013-07-15

    Retention of D in neutron-irradiated W and desorption were examined after plasma exposure at 773 K. Deuterium was accumulated at a relatively high concentration up to a large depth of 50–100 μm due to the trapping effects of defects uniformly induced in the bulk. A significant D release in a vacuum continued to temperatures ⩾1173 K because of the small effective diffusion coefficient and the long diffusion distance. Exposure of ion-irradiated W to D{sub 2} gas showed a clear correlation between concentrations of trapped and solute D as determined by the trapping–detrapping equilibrium. These observations indicated that the accumulation of tritium in high concentrations is possible even at high temperatures if the concentration of solute tritium is high, and baking at moderate temperatures is ineffective for removal of tritium deeply penetrating into the bulk. Nevertheless, clear enhancement of D release was observed under the presence of solute H.

  3. Damage studies on tungsten due to helium ion irradiation

    International Nuclear Information System (INIS)

    Dutta, N.J.; Buzarbaruah, N.; Mohanty, S.R.

    2014-01-01

    Highlights: • Used plasma focus helium ion source to study radiation induced damage on tungsten. • Surface analyses confirm formation of micro-crack, bubbles, blisters, pinholes, etc. • XRD patterns confirm development of compressive stress due to thermal load. • Reduction in hardness value is observed in the case of exposed sample. - Abstract: Energetic and high fluence helium ions emitted in a plasma focus device have been used successfully to study the radiation induced damage on tungsten. The reference and irradiated samples were characterized by optical microscopy, field emission scanning electron microscopy, X-ray diffraction and by hardness testers. The micrographs of the irradiated samples at lower magnification show uniform mesh of cracks of micrometer width. However at higher magnification, various types of crystalline defects such as voids, pinholes, bubbles, blisters and microcracks are distinctly noticed. The prominent peaks in X-ray diffraction spectrum of irradiated samples are seen shifted toward higher Bragg angles, thus indicating accumulation of compressive stress due to the heat load delivered by helium ions. A marginal reduction in hardness of the irradiated sample is also noticed

  4. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    International Nuclear Information System (INIS)

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  5. Tuning surface porosity on vanadium surface by low energy He{sup +} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Hassanein, A.

    2016-08-15

    Highlights: • Surface nanostructuring on vanadium surface using novel He{sup +} ion irradiation process. • Tuning surface-porosity using high-flux, low-energy He{sup +} ion irradiation at constant elevated sample temperature (823–173 K). • Presented top-down approach guarantees good contact between different crystallites. • Sequential significant enhancement in surface-pore edge size (and corresponding reduction in surface-pore density) with increasing sample temperature. - Abstract: In the present study, we report on tuning the surface porosity on vanadium surfaces using high-flux, low-energy He{sup +} ion irradiation as function of sample temperature. Polished, mirror-finished vanadium samples were irradiated with 100 eV He{sup +} ions at a constant ion-flux of 7.2 × 10{sup 20} ions m{sup −2} s{sup −1} for 1 h duration at constant sample temperatures in the wide range of 823–1173 K. Our results show that the surface porosity of V{sub 2}O{sub 5} (naturally oxidized vanadium porous structure, after taking out from UHV) is strongly correlated to the sample temperature and is highly tunable. In fact, the surface porosity significantly increases with reducing sample temperature and reaches up to ∼87%. Optical reflectivity on these highly porous V{sub 2}O{sub 5} surfaces show ∼0% optical reflectivity at 670 nm wavelength, which is very similar to that of “black metal”. Combined with the naturally high melting point of V{sub 2}O{sub 5}, this very low optical reflectivity suggests potential application in solar power concentration technology. Additionally, this top-down approach guarantees relatively good contact between the different crystallites and avoids electrical conductivity limitations (if required). Since V{sub 2}O{sub 5} is naturally a potential photocatalytic material, the resulting sub-micron-sized cube-shaped porous structures could be used in solar water splitting for hydrogen production in energy applications.

  6. Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Devaraju, G. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Pathak, A.P., E-mail: appsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Srinivasa Rao, N.; Saikiran, V. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Enrichi, Francesco [Coordinamento Interuniversitario Veneto per le Nanotecnologie (CIVEN), via delle Industrie 5, Marghera, I-30175Venice (Italy); Trave, Enrico [Dipartimento di Chimica Fisica, Universita Ca' Foscari Venezia, Dorsoduro 2137, I-30123 Venice (Italy)

    2011-09-01

    Highlights: {yields} MOCVD grown GaN samples are irradiated with 80 MeV Ni ions at room temperature. {yields} PL and PLE studies have been carried out for band to band, BL and YL emissions. {yields} Ni ions irradiated GaN shows BL band at 450 nm besides YL band. {yields} Radiation annealed Ga vacancies have quenching effect on YL intensity. {yields} We speculated that BL and YL are associated with N and Ga vacancies, respectively. - Abstract: We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80 MeV Ni ions at a fluence of 1 x 10{sup 13} ions/cm{sup 2}. Irradiated GaN thin films were subjected to rapid thermal annealing for 60 s in nitrogen atmosphere to anneal out the defects. The effects of defects on luminescence were explored with photoluminescence measurements. Room temperature photoluminescence spectra from pristine sample revealed presence of band to band transition besides unwanted yellow luminescence. Irradiated GaN does not show any band to band transition but there is a strong peak at 450 nm which is attributed to ion induced defect blue luminescence. However, irradiated and subsequently annealed samples show improved band to band transitions and a significant decrease in yellow luminescence intensity due to annihilation of defects which were created during irradiation. Irradiation induced effects on yellow and blue emissions are discussed.

  7. Transmission electron microscopy study of the heavy-ion-irradiation-induced changes in the nanostructure of oxide dispersion strengthened steels

    Science.gov (United States)

    Rogozhkin, S. V.; Bogachev, A. A.; Orlov, N. N.; Korchuganova, O. A.; Nikitin, A. A.; Zaluzhnyi, A. G.; Kozodaev, M. A.; Kulevoy, T. V.; Kuibeda, R. P.; Fedin, P. A.; Chalykh, B. B.; Lindau, R.; Hoffman, Ya.; Möslang, A.; Vladimirov, P.; Klimenkov, M.

    2017-07-01

    Transmission electron microscopy was used to study the effect of heavy-ion irradiation on the structure and the phase state of three oxide dispersion strengthened (ODS) steels: ODS Eurofer, ODS 13.5Cr, and ODS 13.5Cr-0.3Ti (wt %). Samples were irradiated with iron and titanium ions to fluences of 1015 and 3 × 1015 cm-2 at 300, 573, and 773 K. The study of the region of maximum radiation damage shows that irradiation increases the number density of oxide particles in all samples. The fraction of fine inclusions increases in the particle size distribution. This effect is most pronounced in the ODS 13.5Cr steel irradiated with titanium ions at 300 K to a fluence of 3 × 1015 cm-2. It is demonstrated that oxide inclusions in ODS 13.5Cr-0.3Ti and ODS 13.5Cr steels are more stable upon irradiation at 573 and 773 K than upon irradiation at 300 K.

  8. Effects of tube diameter and chirality on the stability of single-walled carbon nanotubes under ion irradiation

    International Nuclear Information System (INIS)

    Xu Zijian; Zhang Wei; Zhu Zhiyuan; Ren Cuilan; Li Yong; Huai Ping

    2009-01-01

    Using molecular dynamics method, we investigated the influence of tube diameter and chirality on the stability of single-walled carbon nanotubes (CNTs) under ion irradiation. We found that in the energy range below 1 keV, the dependence of CNT stability on the tube diameter is no longer monotonic under C ion irradiation, and the thinner (5, 5) CNT may be more stable than the thicker (7, 7) CNT, while under Ar irradiation, the CNT stability increases still monotonically with the CNT diameter. This stability behavior was further verified by the calculations of the threshold ion energies to produce displacement damage in CNTs. The abnormal stability of thin CNTs is related to their resistance to the instantaneous deformation in the wall induced by ion pushing, the high self-healing capacity, as well as the different interaction properties of C and Ar ions with CNT atoms. We also found that under ion irradiation the stability of a zigzag CNT is better than that of an armchair CNT with the same diameter. This is because of the bonding structure difference between the armchair and the zigzag CNTs with respect to the orientations of graphitic networks as well as the self-healing capacity difference.

  9. Ion-irradiation studies of cascade damage in metals

    International Nuclear Information System (INIS)

    Averback, R.S.

    1982-03-01

    Ion-irradiation studies of the fundamental aspects of cascade damage in metals are reviewed. The emphasis of these studies has been the determination of the primary state of damage (i.e. the arrangement of atoms in the cascade region prior to thermal migration of defects). Progress has been made towards understanding the damage function (i.e. the number of Frenkel pairs produced as a function of primary recoil atom energy), the spatial configuration of vacancies and interstitials in the cascade and the cascade-induced mixing of atoms. It is concluded for these studies that the agitation of the lattice in the vicinity of energetic displacement cascades stimulates the defect motion and that such thermal spike motion induces recombination and clustering of Frenkel defects. 9 figures

  10. Surface modification of multilayer graphene using Ga ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shao, Ying; Ge, Daohan; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Qizhi [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State key laboratory of Robotics, Chinese Academy of Sciences, Shengyang 110000 (China)

    2015-04-28

    The effect of Ga ion irradiation intensity on the surface of multilayer graphene was examined. Using Raman spectroscopy, we determined that the irradiation caused defects in the crystal structure of graphene. The density of defects increased with the increase in dwell times. Furthermore, the strain induced by the irradiation changed the crystallite size and the distance between defects. These defects had the effect of doping the multilayer graphene and increasing its work function. The increase in work function was determined using contact potential difference measurements. The surface morphology of the multilayer graphene changed following irradiation as determined by atomic force microscopy. Additionally, the adhesion between the atomic force microscopy tip and sample increased further indicating that the irradiation had caused surface modification, important for devices that incorporate graphene.

  11. Neovascular glaucoma after helium ion irradiation for uveal melanoma

    International Nuclear Information System (INIS)

    Kim, M.K.; Char, D.H.; Castro, J.L.; Saunders, W.M.; Chen, G.T.; Stone, R.D.

    1986-01-01

    Neovascular glaucoma developed in 22 of 169 uveal melanoma patients treated with helium ion irradiation. Most patients had large melanomas; no eyes containing small melanomas developed anterior segment neovascularization. The mean onset of glaucoma was 14.1 months (range, 7-31 months). The incidence of anterior segment neovascularization increased with radiation dosage; there was an approximately three-fold increase at 80 GyE versus 60 GyE of helium ion radiation (23% vs. 8.5%) (P less than 0.05). Neovascular glaucoma occurred more commonly in larger tumors; the incidence was not affected by tumor location, presence of subretinal fluid, nor rate of tumor regression. Fifty-three percent of patients had some response with intraocular pressures of 21 mmHg or less to a combination of antiglaucoma treatments

  12. [Grain boundary and interface kinetics during ion irradiation

    International Nuclear Information System (INIS)

    Atwater, H.A.

    1991-01-01

    Proposed here is renewed support of a research program focused on interface motion and phase transformation during ion irradiation, with emphasis on elemental semiconductors. Broadly speaking, the aims of this program are to explore defect kinetics in amorphous and crystalline semiconductors, and to relate defect dynamics to interface motion and phase transformations. Over the last three years, we initiated a program under DOE support to explore crystallization and amorphization of elemental semiconductors under irradiation. This research has enabled new insights about the nature of defects in amorphous semiconductors and about microstructural evolution in the early stages of crystallization. In addition, we have demonstrated almost arbitrary control over the relative rates of crystal nucleation and crystal growth in silicon. As a result, the impinged grain microstructure of thin (100 nm) polycrystalline films crystallized under irradiation can be controlled with grain sizes ranging from a few nanometers to several micrometers, which may have interesting technological implications

  13. Hydrogen formation under gamma and heavy ions irradiation of geopolymers

    International Nuclear Information System (INIS)

    Chupin, F.; Dannoux-Papin, A.; D'Espinose de Lacaillerie, J.B.; Ngono Ravache, Y.

    2015-01-01

    This study examines the behavior under irradiation of geo-polymer which is not yet well known and attempts to highlight the importance of water radiolysis. For their use as embedding matrices, stability under ionizing radiation as well as low hydrogen gas released must be demonstrated. Different formulations of geo-polymers have been irradiated either with γ-rays ( 60 Co sources) or 75 MeV 36 Ar ions beams and the production of hydrogen released has been quantified. This paper presents the results of gas analysis in order to identify important structural parameters that influence confined water radiolysis. Indeed, a correlation between pore size, water content on one side, and the hydrogen production radiolytic yield (G(H 2 )) on the other side, has been demonstrated. For the 75 MeV 36 Ar ions irradiation, the effect of porosity has not been well emphasized. For both, the results have revealed the water content influence. (authors)

  14. Evaluation of the fluence to dose conversion coefficients for high energy neutrons using a voxel phantom coupled with the GEANT4 code

    CERN Document Server

    Paganini, S

    2005-01-01

    Crews working on present-day jet aircraft are a large occupationally exposed group with a relatively high average effective dose from Galactic cosmic radiation. Crews of future high-speed commercial flying at higher altitudes would be even more exposed. To help reduce the significant uncertainties in calculations of such exposures, the male adult voxels phantom MAX, developed in the Nuclear Energy Department of Pernambuco Federal University in Brazil, has been coupled with the Monte Carlo simulation code GEANT4. This toolkit, distributed and upgraded from the international scientific community of CERN/Switzerland, simulates thermal to ultrahigh energy neutrons transport and interactions in the matter. The high energy neutrons are pointed as the component that contribute about 70% of the neutron effective dose that represent the 35% to 60% total dose at aircraft altitude. In this research calculations of conversion coefficients from fluence to effective dose are performed for neutrons of energies from 100 MeV ...

  15. Improvement of VMAT plan quality for head and neck cancer with high resolution fluences generated by couch shift between arcs.

    Science.gov (United States)

    Park, Jong Min; Park, So-Yeon; Wu, Hong-Gyun; Kim, Jung-In

    2018-02-01

    To investigate the changes in quality of the volumetric modulated arc therapy (VMAT) plans with couch-shift between arcs by half of a multi-leaf collimator (MLC) leaf width. A total of 22 patients with head-and-neck cancer were retrospectively selected. Since the smallest MLC leaf width was 5 mm in this study, the couch was shifted by 2.5 mm in the longitudinal-direction between arcs to increase the resolution of fluence map. A total of three types of VMAT plans were generated for each patient; the three types of plans were a two-full-arc plan without couch-shift (NS plan), a two-half-arc-pair plan with couch-shift (HAS plan), and a two-full-arc pair plan with couch-shift (FAS plan). Changes in the dose-volumetric parameters were investigated. The FAS plan showed the best plan quality for the target volumes and organs at risk compared to the NS and HAS plans. However, the magnitudes of differences among the three types of plans were minimal, and every plan was clinically acceptable. The average integral doses of the NS, HAS, and FAS plans were 160,549 ± 37,600 Gy-cc, 147,828 ± 33,343 Gy-cc, and 156,030 ± 36,263 Gy-cc, respectively. The average monitor unit of the NS, HAS, and FAS plans were 717 ± 120 MU, 648 ± 100 MU, and 763 ± 158 MU, respectively. The HAS plan was better than the others in terms of normal tissue sparing and plan efficiency. By shifting the couch by half of the MLC leaf width in the longitudinal direction between arcs, the VMAT plan quality could be improved. Copyright © 2018 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  16. Quartz modification by Zn ion implantation and swift Xe ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Privezentsev, Vladimir [Institute of Physics and Technology, Russian Academy of Sciences, Moscow (Russian Federation); Kulikauskas, Vaclav [Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (Russian Federation); Didyk, Alexander; Skuratov, Vladimir [Joint Institute of Nuclear Research, Dubna (Russian Federation); Steinman, Edward; Tereshchenko, Alexey; Kolesnikov, Nikolay [Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka (Russian Federation); Trifonov, Alexey; Sakharov, Oleg [National Research University ' ' MIET' ' , Zelenograd, Moscow (Russian Federation); Ksenich, Sergey [National University of Science and Technology ' ' MISiS' ' , Moscow (Russian Federation)

    2017-07-15

    The quartz slides were implanted by {sup 64}Zn{sup +} ions with dose of 5 x 10{sup 16}/cm{sup 2} and energy of 100 keV. After implantation, the amorphous metallic Zn nanoparticles with an average radius of 3.5 nm were created. The sample surface becomes nonuniform, its roughness is increased and its values rise up to 6 nm compared to virgin state, and the roughness maximum is at a value of about 0.8 nm. The surface is made up of valleys and hillocks which have a round shape with an average diameter about 200 nm. At the center of these hillocks are pores with a depth up to 6 nm and a diameter of about 20 nm. After implantation in UV-vis diapason, the optical transmission decreases while PL peak (apparently due to oxygen deficient centers) at wavelength of 400 nm increases. Then the samples were subjected to swift Xe ion irradiation with the fluences of 1 x 10{sup 12}-7.5 x 10{sup 14}/cm{sup 2} and energy of 167 MeV. After Xe irradiation, the sample surface roughness shat down to values of 0.5 nm and the roughness maximum is at a value of about 0.1 nm. Optical transmission in UV-vis diapason increases. The PL peak at wavelength of 400 nm is decreased while a PL peak at wavelength of 660 nm is raised. This peak is presumably due to non-bridging oxygen hole centers or/and NPs with structure Si(core)/SiO{sub 2}(shell). HRTEM image of Zn-implanted quartz subsurface layer. One can see the Zn amorphous nanoparticles, which confirms the electron diffraction pattern (insert). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Electronic energy loss of the latent track in heavy ion-irradiated polyimide

    International Nuclear Information System (INIS)

    Sun Youmei; Liu Jie; Zhang Chonghong; Wang Zhiguang; Jin Yunfan; Duan Jinglai; Song Yin

    2005-01-01

    In the interaction process of a swift heavy ion (SHI) and polymer, a latent track with radius of several nanometers appears near the ion trajectory due to the dense ionization and excitation. To describe the role of electronic energy loss (dE/dX) e , multi-layer stacks (with different dE/dX) of polyimide (PI) films were irradiated by different SHIs (1.158 GeV Fe 56 and 1.755 GeV Xe 136 ) under vacuum at room temperature. Chemical changes of modified PI films were studied by Fourier Transform Infrared (FTIR) spectroscopy. The main feature of SHI irradiation is the degradation of the functional group and creation of alkyne. The chain disruption rate of PI was investigated in the fluence range from 1 x 10 11 to 6 x 10 12 ions/cm 2 and a wider energy stopping power range (2.2 to 5.2 keV/nm for Fe 56 ions and 8.6 to 11.3 keV/nm for Xe 136 ions). Alkyne formation was observed over the electronic energy loss range of interest. Assuming the saturated track model (the damage process only occur in a cylinder of area σ), the mean degradation and alkyne formation radii in tracks were deduced for Fe and Xe ion irradiation, respectively. The results were validated by the thermal spike model and the threshold electronic energy loss of track formation S et in PI was deduced. The analysis of the irradiated PI films shows that the predictions of the thermal spike model are in qualitative agreement with the curve shape of experimental results. (authors)

  18. Effect of irradiation temperature on microstructural changes in self-ion irradiated austenitic stainless steel

    Science.gov (United States)

    Jin, Hyung-Ha; Ko, Eunsol; Lim, Sangyeob; Kwon, Junhyun; Shin, Chansun

    2017-09-01

    We investigated the microstructural and hardness changes in austenitic stainless steel after Fe ion irradiation at 400, 300, and 200 °C using transmission electron microscopy (TEM) and nanoindentation. The size of the Frank loops increased and the density decreased with increasing irradiation temperature. Radiation-induced segregation (RIS) was detected across high-angle grain boundaries, and the degree of RIS increases with increasing irradiation temperature. Ni-Si clusters were observed using high-resolution TEM in the sample irradiated at 400 °C. The results of this work are compared with the literature data of self-ion and proton irradiation at comparable temperatures and damage levels on stainless steels with a similar material composition with this study. Despite the differences in dose rate, alloy composition and incident ion energy, the irradiation temperature dependence of RIS and the size and density of radiation defects followed the same trends, and were very comparable in magnitude.

  19. Use of double and triple-ion irradiation to study the influence of high levels of helium and hydrogen on void swelling of 8-12% Cr ferritic-martensitic steels

    Science.gov (United States)

    Kupriiyanova, Y. E.; Bryk, V. V.; Borodin, O. V.; Kalchenko, A. S.; Voyevodin, V. N.; Tolstolutskaya, G. D.; Garner, F. A.

    2016-01-01

    In accelerator-driven spallation (ADS) devices, some of the structural materials will be exposed to intense fluxes of very high energy protons and neutrons, producing not only displacement damage, but very high levels of helium and hydrogen. Unlike fission flux-spectra where most helium and hydrogen are generated by transmutation in nickel and only secondarily in iron or chromium, gas production in ADS flux-spectra are rather insensitive to alloy composition, such that Fe-Cr base ferritic alloys also generate very large gas levels. While ferritic alloys are known to swell less than austenitic alloys in fission spectra, there is a concern that high gas levels in fusion and especially ADS facilities may strongly accelerate void swelling in ferritic alloys. In this study of void swelling in response to helium and hydrogen generation, irradiation was conducted on three ferritic-martensitic steels using the Electrostatic Accelerator with External Injector (ESUVI) facility that can easily produce any combination of helium to dpa and/or hydrogen to dpa ratios. Irradiation was conducted under single, dual and triple beam modes using 1.8 MeV Cr+3, 40 keV He+, and 20 keV H+. In the first part of this study we investigated the response of dual-phase EP-450 to variations in He/dpa and H/dpa ratio, focusing first on dual ion studies and then triple ion studies, showing that there is a diminishing influence on swelling with increasing total gas content. In the second part we investigated the relative response of three alloys spanning a range of starting microstructure and composition. In addition to observing various synergisms between He and H, the most important conclusion was that the tempered martensite phase, known to lag behind the ferrite phase in swelling in the absence of gases, loses much of its resistance to void nucleation when irradiated at large gas/dpa levels.

  20. Use of double and triple-ion irradiation to study the influence of high levels of helium and hydrogen on void swelling of 8–12% Cr ferritic-martensitic steels

    Energy Technology Data Exchange (ETDEWEB)

    Kupriiyanova, Y.E., E-mail: fomenkoj@kipt.kharkov.ua [National Science Centre Kharkov Institute of Physics and Technology, 1, Akademicheskaya St., Kharkov, 61108 (Ukraine); Bryk, V.V.; Borodin, O.V.; Kalchenko, A.S.; Voyevodin, V.N.; Tolstolutskaya, G.D. [National Science Centre Kharkov Institute of Physics and Technology, 1, Akademicheskaya St., Kharkov, 61108 (Ukraine); Garner, F.A. [Radiation Effects Consulting, Richland, WA 99354 (United States)

    2016-01-15

    In accelerator-driven spallation (ADS) devices, some of the structural materials will be exposed to intense fluxes of very high energy protons and neutrons, producing not only displacement damage, but very high levels of helium and hydrogen. Unlike fission flux-spectra where most helium and hydrogen are generated by transmutation in nickel and only secondarily in iron or chromium, gas production in ADS flux-spectra are rather insensitive to alloy composition, such that Fe–Cr base ferritic alloys also generate very large gas levels. While ferritic alloys are known to swell less than austenitic alloys in fission spectra, there is a concern that high gas levels in fusion and especially ADS facilities may strongly accelerate void swelling in ferritic alloys. In this study of void swelling in response to helium and hydrogen generation, irradiation was conducted on three ferritic-martensitic steels using the Electrostatic Accelerator with External Injector (ESUVI) facility that can easily produce any combination of helium to dpa and/or hydrogen to dpa ratios. Irradiation was conducted under single, dual and triple beam modes using 1.8 MeV Cr{sup +3}, 40 keV He{sup +}, and 20 keV H{sup +}. In the first part of this study we investigated the response of dual-phase EP-450 to variations in He/dpa and H/dpa ratio, focusing first on dual ion studies and then triple ion studies, showing that there is a diminishing influence on swelling with increasing total gas content. In the second part we investigated the relative response of three alloys spanning a range of starting microstructure and composition. In addition to observing various synergisms between He and H, the most important conclusion was that the tempered martensite phase, known to lag behind the ferrite phase in swelling in the absence of gases, loses much of its resistance to void nucleation when irradiated at large gas/dpa levels.

  1. Long-term safety and efficacy follow-up of prophylactic higher fluence collagen cross-linking in high myopic laser-assisted in situ keratomileusis

    Directory of Open Access Journals (Sweden)

    Kanellopoulos AJ

    2012-07-01

    Full Text Available Anastasios John KanellopoulosLaservision.gr Institute, Athens, Greece, and New York University Medical School, New York, NY, USABackground: The purpose of this study was to evaluate the safety and efficacy of ultraviolet A irradiation cross-linking on completion for cases of high myopic laser-assisted in situ keratomileusis (LASIK.Methods: Forty-three consecutive LASIK cases treated with femtosecond laser flap and the WaveLight excimer platform were evaluated perioperatively for uncorrected visual acuity, best corrected spectacle visual acuity, refraction, keratometry, topography, total and flap pachymetry, corneal optical coherence tomography, and endothelial cell count. All eyes at the completion of LASIK had cross-linking through the repositioned flap, with higher fluence (10 mW/cm2 ultraviolet light of an average 370 µm wavelength and 10 mW/cm2 fluence applied for 3 minutes following an earlier single instillation of 0.1% riboflavin within the flap interface. Mean follow-up duration was 3.5 (range 1.0–4.5 years.Results: Mean uncorrected visual acuity changed from 0.2 to 1.2, best corrected spectacle visual acuity from 1.1 to 1.2, spherical equivalent from -7.5 diopters (D to -0.2 D, keratometry from 44.5 D to 38 D, flap pachymetry from 105 µm to, total pachymetry from 525 to 405, and endothelial cell count from 2750 to 2800. None of the cases developed signs of ectasia or significant regression during follow-up.Conclusion: Prophylactic collagen cross-linking for high-risk LASIK cases appears to be a safe and effective adjunctive treatment for refractive regression and potential ectasia. This application may be viewed as prophylactic customization of the biomechanical behavior of corneal collagen.Keywords: prophylactic collagen cross-linking, laser-assisted in situ keratomileusis, high-risk, post-LASIK ectasia

  2. Nanostructured light-absorbing crystalline CuIn{sub (1–x)}Ga{sub x}Se{sub 2} thin films grown through high flux, low energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hall, Allen J.; Hebert, Damon; Rockett, Angus A. [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States); Shah, Amish B. [Center for Microanalysis of Materials, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Ave, Urbana, Illinois 61801 (United States); Bettge, Martin [Chemical Sciences and Engineering, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60438 (United States)

    2013-10-21

    A hybrid effusion/sputtering vacuum system was modified with an inductively coupled plasma (ICP) coil enabling ion assisted physical vapor deposition of CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films on GaAs single crystals and stainless steel foils. With <80 W rf power to the ICP coil at 620–740 °C, film morphologies were unchanged compared to those grown without the ICP. At low temperature (600–670 °C) and high rf power (80–400 W), a light absorbing nanostructured highly anisotropic platelet morphology was produced with surface planes dominated by (112){sub T} facets. At 80–400 W rf power and 640–740 °C, both interconnected void and small platelet morphologies were observed while at >270 W and above >715 °C nanostructured pillars with large inter-pillar voids were produced. The latter appeared black and exhibited a strong (112){sub T} texture with interpillar twist angles of ±8°. Application of a negative dc bias of 0–50 V to the film during growth was not found to alter the film morphology or stoichiometry. The results are interpreted as resulting from the plasma causing strong etching favoring formation of (112){sub T} planes and preferential nucleation of new grains, balanced against conventional thermal diffusion and normal growth mechanisms at higher temperatures. The absence of effects due to applied substrate bias suggests that physical sputtering or ion bombardment effects were minimal. The nanostructured platelet and pillar films were found to exhibit less than one percent reflectivity at angles up to 75° from the surface normal.

  3. Annealing effect on the reproducibility of Josephson Junctions made by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Sirena, M; Matzen, S; Bergeal, N; Lesueur, J [Laboratoire Photons Et Matiere, CNRS, ESPCI, 10 Rue Vauquelin 75231 Paris (France) (France); Faini, G [Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis (France) (France); Bernard, R; Briatico, J; Crete, D [UMR-CNRS/THALES, Route D128, 91767 Palaiseau (France) (France)], E-mail: martin.sirena@espci.fr

    2008-02-01

    We have studied the annealing effects on the transport properties of High Tc Josephson Junctions (JJ) made by ion irradiation. Several JJ were measured for different annealing times and the experimental data were compared to numerical simulations. We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the JJ coupling temperature (T{sub J}) and the homogeneity of a JJ array, related to the evolution of the defects density mean value and its distribution width. For sufficient long annealing times (t > 600 min), {delta}T{sub J} was significatively reduced. This result appears to be very encouraging for future applications where the spread in JJ characteristics has to be as low as possible.

  4. Annealing effect on the reproducibility of Josephson Junctions made by ion irradiation

    International Nuclear Information System (INIS)

    Sirena, M; Matzen, S; Bergeal, N; Lesueur, J; Faini, G; Bernard, R; Briatico, J; Crete, D

    2008-01-01

    We have studied the annealing effects on the transport properties of High Tc Josephson Junctions (JJ) made by ion irradiation. Several JJ were measured for different annealing times and the experimental data were compared to numerical simulations. We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the JJ coupling temperature (T J ) and the homogeneity of a JJ array, related to the evolution of the defects density mean value and its distribution width. For sufficient long annealing times (t > 600 min), ΔT J was significatively reduced. This result appears to be very encouraging for future applications where the spread in JJ characteristics has to be as low as possible

  5. Neutron fluence measurements

    International Nuclear Information System (INIS)

    1970-01-01

    For research reactor work dealing with such subjects as radiation effects on solids and such disciplines as radiochemistry and radiobiology, the radiation dose or neutron fluence is an essential parameter in evaluating results. Unfortunately it is very difficult to determine. Even when the measurements have been accurate, it is difficult to compare results obtained in different experiments because present methods do not always reflect the dependence of spectra or of different types of radiation on the induced processes. After considering the recommendations of three IAEA Panels, on 'In-pile dosimetry' held in July 1964, on 'Neutron fluence measurements' in October 1965, and on 'In-pile dosimetry' in November 1966, the Agency established a Working Group on Reactor Radiation Measurements. This group consisted of eleven experts from ten different Member States and two staff members of the Agency. In the measurement of energy absorbed by materials from neutrons and gamma rays, there are various reports and reviews scattered throughout the literature. The group, however, considered that the time was ripe for all relevant information to be evaluated and gathered together in the form of a practical guide, with the aim of promoting consistency in the measurement and reporting of reactor radiation. The group arranged for the material to be divided into two manuals, which are expected to be useful both for experienced workers and for beginners

  6. Mutation effects of C{sup 2+} ion irradiation on the greasy Nitzschia sp

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y.N., E-mail: ynyangbuaa@gmail.com [School of Chemistry and Environment, Beihang University, 37th Xueyuan Road, Haidian District, P.O. Box 106, 100191 Beijing (China); Liu, C.L.; Wang, Y.K. [School of Chemistry and Environment, Beihang University, 37th Xueyuan Road, Haidian District, P.O. Box 106, 100191 Beijing (China); Xue, J.M. [State Key Lab of Nuclear Physics and Nuclear Technology, Peking University, 100084 Beijing (China)

    2013-11-15

    Highlights: • The optimal conditions of C{sup 2+} ion irradiation on Nitzschia sp. were discussed. • Get the “saddle type” survival curve. • One mutant whose lipid content improved significantly was selected. • The C{sup 2+} ion irradiation didn’t change the algae's morphology and growth rate. - Abstract: Screening and nurturing algae with high productivity, high lipid content and strong stress resistance are very important in algae industry. In order to increase the lipid content, the Nitzschia sp. was irradiated with a 3 MeV C{sup 2+} beam. The sample pretreatment method was optimized to obtain the best mutagenic condition and the survival ratio curve. The positive mutants with a significant improvement in lipid content were screened and their C{sup 2+} mutagenic effects were analyzed by comparing the greasiness and growth characteristics with the wild type algae. Results showed that when the Nitzschia sp. was cultivated in nutritious medium containing 10% glycerol solution, and dried on the filter for 5 min after centrifugation, the realization of the microalgae heavy ion mutagenesis could be done. The survival ratio curve caused by C{sup 2+} irradiation was proved to be “saddle-shaped”. A positive mutant was screened among 20 survivals after irradiation, the average lipid content of the mutation increased by 9.8% than the wild type after 4 generations. But the growth rate of the screened mutation didn’t change after the heavy ion implantation compared to the wild type algae.

  7. Microstructure and mechanical properties of FeCrAl alloys under heavy ion irradiations

    Science.gov (United States)

    Aydogan, E.; Weaver, J. S.; Maloy, S. A.; El-Atwani, O.; Wang, Y. Q.; Mara, N. A.

    2018-05-01

    FeCrAl ferritic alloys are excellent cladding candidates for accident tolerant fuel systems due to their high resistance to oxidation as a result of formation of a protective Al2O3 scale at high temperatures in steam. In this study, we report the irradiation response of the 10Cr and 13Cr FeCrAl cladding tubes under Fe2+ ion irradiation up to ∼16 dpa at 300 °C. Dislocation loop size, density and characteristics were determined using both two-beam bright field transmission electron microscopy and on-zone scanning transmission electron microscopy techniques. 10Cr (C06M2) tube has a lower dislocation density, larger grain size and a slightly weaker texture compared to the 13Cr (C36M3) tube before irradiation. After irradiation to 0.7 dpa and 16 dpa, the fraction of type sessile dislocations decreases with increasing Cr amount in the alloys. It has been found that there is neither void formation nor α‧ precipitation as a result of ion irradiations in either alloy. Therefore, dislocation loops were determined to be the only irradiation induced defects contributing to the hardening. Nanoindentation testing before the irradiation revealed that the average nanohardness of the C36M3 tube is higher than that of the C06M2 tube. The average nanohardness of irradiated tube samples saturated at 1.6-2.0 GPa hardening for both tubes between ∼3.4 dpa and ∼16 dpa. The hardening calculated based on transmission electron microscopy was found to be consistent with nanohardness measurements.

  8. Highly sensitive urea sensing with ion-irradiated polymer foils

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Hernandez, G. M.; Alfonta, L.

    2012-01-01

    Roč. 273, č. 2 (2012), s. 164-170 ISSN 0168-583X Institutional research plan: CEZ:AV0Z10480505 Keywords : NANOPORES * BIOSENSOR * SAMPLES Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.266, year: 2012

  9. Highly sensitive urea sensing with ion-irradiated polymer foils

    International Nuclear Information System (INIS)

    Fink, Dietmar; Muñoz Hernandez, Gerardo; Alfonta, Lital

    2012-01-01

    Recently we prepared urea-sensors by attaching urease to the inner walls of etched ion tracks within thin polymer foil. Here, alternative track-based sensor configurations are examined where the enzyme remained in solution. The conductivities of systems consisting of two parallel irradiated polymer foils and confining different urea/urease mixtures in between were examined. The correlations between conductivity and urea concentration differed strongly for foils with unetched and etched tracks, which points at different sensing mechanisms – tentatively attributed to the adsorption of enzymatic reaction products on the latent track entrances and to the enhanced conductivity of reaction product-filled etched tracks, respectively. All examined systems enable in principle, urea sensing. They point at the possibility of sensor cascade construction for more sensitive or selective sensor systems.

  10. Electrolyte penetration into high energy ion irradiated polymers

    Czech Academy of Sciences Publication Activity Database

    Fink, D.; Petrov, A.; Müller, M.; Asmus, T.; Hnatowicz, Vladimír; Vacík, Jiří; Červená, Jarmila

    158/159 (2002), s. 228-233 ISSN 0257-8972 R&D Projects: GA AV ČR KSK1010104; GA ČR GA102/01/1324 Keywords : polymers * ion bombardment * defects * diffusion * nanostructrure Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.267, year: 2002

  11. High energy argon ion irradiations of polycrystalline iron

    International Nuclear Information System (INIS)

    Dunlop, A.; Lesueur, D.; Lorenzelli, N.; Boulanger, L.

    1986-09-01

    We present here the results of our recent irradiations of polycrystalline iron targets with very energetic (1.76 GeV) Ar ions. The targets consist of piles of thin iron samples, the total thickness of each target being somewhat greater than the theoretical range (450 μm) of the ions. We can thus separate the phenomena which occur at different average energies of the ions and study during the slowing-down process: the different types of induced nuclear reactions. They allow us to determine the experimental range of the ions, the defect profiles in the targets, the structure of the displacement cascades (electron microscopy) and their stability

  12. Synthesis of Fe–C{sub 60} complex by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Minezaki, Hidekazu, E-mail: dn1000012@toyo.jp [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Oshima, Kosuke [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Uchida, Takashi; Mizuki, Toru [Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Racz, Richard [Institute of Nuclear Research (ATOMKI), H-4026, Debrecen, Bem tér 18/C (Hungary); Muramatsu, Masayuki [National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage-ku, Chiba-shi, Chiba 263-8555 (Japan); Asaji, Toyohisa [Oshima National College of Maritime Technology, 1091-1 Komatsu Suou Oshima City, Oshima, Yamaguchi 742-2193 (Japan); Kitagawa, Atsushi [National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage-ku, Chiba-shi, Chiba 263-8555 (Japan); Kato, Yushi [Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita-shi, Osaka 565-0871 (Japan); Biri, Sandor [Institute of Nuclear Research (ATOMKI), H-4026, Debrecen, Bem tér 18/C (Hungary); Yoshida, Yoshikazu [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)

    2013-09-01

    Highlights: •The Fe{sup +} beam was irradiated to the C{sub 60} thin films. •The Fe{sup +}-irradiated C{sub 60} thin films were analyzed by LDI-TOF-MS and by HPLC. •The peak with mass/charge of 776 was observed in the Fe{sup +}-irradiated C{sub 60} thin film. •We could synthesize the Fe–C{sub 60} complex as a new material. -- Abstract: In order to synthesize the Fe@C{sub 60} complex, iron ion beam irradiated to C{sub 60} thin films. The energy of the irradiated iron ions was controlled from 50 eV to 250 eV. The dose of that was controlled from 6.67 × 10{sup 12} to 6.67 × 10{sup 14} ions/cm{sup 2}. By the analysis of the surface of the iron ion irradiated C{sub 60} thin films using laser desorption/ionization time-of-flight mass spectrometry, we could confirm the peak with mass/charge of 776. The mass/charge of 776 corresponds to Fe + C{sub 60}. We obtained the maximum intensity of the peak with mass/charge of 776 under the irradiation iron ion energy and the dose were 50 eV and 3.30 × 10{sup 13} ions/cm{sup 2}, respectively. Then, the separation of the material with mass of 776 was performed by using high performance liquid chromatography. We could separate the Fe + C{sub 60} from the iron ion irradiated C{sub 60} thin film. As a result, we could synthesize the Fe + C{sub 60} complex as a new material.

  13. Effect of heavy ion irradiation on thermodynamically equilibrium Zr-Excel alloy

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Hongbing [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada); Liang, Jianlie [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada); College of Science, Guangxi University for Nationalities, 188, East Da Xue Rd., Nanning, Guangxi, 530006 P.R.C (China); Yao, Zhongwen, E-mail: yaoz@queensu.ca [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada); Kirk, Mark A. [Material Science Division Argonne National Laboratory, Argonne, IL 60439 (United States); Daymond, Mark R., E-mail: mark.daymond@queensu.ca [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada)

    2017-05-15

    The thermodynamically equilibrium state was achieved in a Zr-Sn-Nb-Mo alloy by long-term annealing at an intermediate temperature. The fcc intermetallic Zr(Mo, Nb){sub 2} enriched with Fe was observed at the equilibrium state. In-situ 1 MeV Kr{sup 2+} heavy ion irradiation was performed in a TEM to study the stability of the intermetallic particles under irradiation and the effects of the intermetallic particle on the evolution of type dislocation loops at different temperatures from 80 to 550 °C. Chemi-STEM elemental maps were made at the same particles before and after irradiation up to 10 dpa. It was found that no elemental redistribution occurs at 200 °C and below. Selective depletion of Fe was observed from some precipitates under irradiation at higher temperatures. No change in the morphology of particles and no evidence showing a crystalline to amorphous transformation were observed at all irradiation temperatures. The formation of type dislocation loops was observed under irradiation at 80 and 200 °C, but not at 450 and 550 °C. The loops were non-uniformly distributed; a localized high density of type dislocation loops were observed near the second phase particles; we suggest that loop nucleation is favored as a result of the stress induced by the particles, rather than by elemental redistribution. The stability of the second phase particles and the formation of the type loops under heavy ion irradiation are discussed.

  14. Self-ion Irradiation Damage of F/M and ODS steels

    International Nuclear Information System (INIS)

    Kang, Suk Hoon; Chun, Young-Bum; Noh, Sanghoon; Jang, Jinsung; Kim, Tae Kyu

    2014-01-01

    Oxide dispersion strengthened (ODS) ferritic steels are potential high-temperature materials that are stabilized by dispersed particles at elevated temperatures. These dispersed particles improve the tensile strength and creep rupture strength, they are expected to increase the operation temperature up to approximately 650 .deg. C and also enhance the energy efficiency of the fusion reactor. Some reports described that the nano-clusters are strongly resistant to coarsening by annealing up to 1000 .deg. C, and nanoclusters do not change after ion irradiation up to 0.7 dpa at 300 .deg. C. ODS steels will be inevitably exposed to neutron irradiation condition; the irradiation damages, creep and swelling are always great concern. The dispersed oxide particles are believed to determine the performance of the steel, even the radiation resistance. In this study, F/M and ODS model alloys of Korea Atomic Energy Research Institute (KAERI) were irradiated by Fe 3+ self-ion to emulate the neutron irradiation effect. In this study, Fe 3+ self-ion irradiation is used as means of introducing radiation damage in F/M steel and ODS steel. The ion accelerator named DuET (in Kyoto University, Japan) was used for irradiation of Fe 3+ ion by 6.4 MeV at 300 .deg. C. The maximum damage rate in F/M and ODS steels were estimated roughly 6 dpa. After radiation, point or line defects were dominantly observed in F/M steel, on the other hands, small circular cavities were typically observed in ODS steel. Nanoindentation is a useful tool to determine the irradiationinduced hardness change in the damage layer of ionirradiated iron base alloys

  15. A Preliminary Study of the Application of a Model Animal-Caenorhabidity elegans' Exposure to a Low-Energy Ion Irradiation System

    International Nuclear Information System (INIS)

    Liu Xuelan; Cai Kezhou; Feng Huiyun; Xu An; Yuan Hang; Yu Zengliang

    2007-01-01

    Because of the lack of suitable animal models adapted to high vacuum stress in the low-energy ion implantation system, the bio-effects ion irradiation with an energy less than 50 keV on multi-cellular animal individuals have never been investigated so far. The nematode Caenorhabditis elegans has proved to be an excellent animal model used for the study of a broad spectrum of biological issues. The purpose of this work was to investigate the viability of this animal under ion irradiation. We studied the protection effects of glycerol and trehalose on the enhancement of nematodes' ability to bear the vacuum stress. The results showed that the survival of the nematodes was enhanced remarkably under long and slow desiccation, even without glycerol and trehalose. 15% glycerol showed a better anti-vacuum stress effect on the nematodes than trehalose did under short-time desiccation. Low-temperature pre-treatment or post-treatment of the samples had no obvious effect on the survival scored after argon ion irradiation. Moreover, little effect was induced by 15% glycerol- and vacuum-exposure on germ cell apoptosis, compared to the untreated control sample. It issuggested that such treatment would provide relatively low background for genotoxic evaluations with ion irradiation

  16. Construction plan of ion irradiation facility in JAERI

    International Nuclear Information System (INIS)

    Tanaka, Ryuichi

    1987-01-01

    The Takasaki Radiation Chemistry Research Establishment of Japan Atomic Energy Research Institute (JAERI) started the construction of an ion irradiation facility to apply ion beam to the research and development of radiation resistant materials for severe environment, the research on biotechnology and new functional materials. This project was planned as ion beam irradiation becomes an effective means for the research on fundamental physics and advanced technology, and the national guideline recently emphasizes the basic and pioneering field in research and development. This facility comprises an AVF cyclotron with an ECR ion source (maximum proton energy: 90 MeV), a 3 MV tandem accelerator, a 3 MV single end type Van de Graaf accelerator and a 400 kV ion implanter. In this report, the present status of planning the accelerators and the facility to be constructed, the outline of research plan, the features of the accelerators, and the beam characteristics are described. In this project, the research items are divided into the materials for space environment, the materials for nuclear fusion reactors, biotechnology, new functional materials, and ion beam technology. The ion beams required for the facility are microbeam, pulsed beam, multiple beam, neutron beam and an expanded irradiation field. (Kako, I.)

  17. Precipitation in Ni-Si during electron and ion irradiation

    Science.gov (United States)

    Lucas, G. E.; Zama, T.; Ishino, S.

    1986-11-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2 × 10 -5dpa/s to 2 × 10 -3dpa/s at temperatures in the range 25°C to 450°C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2 × 10 -3dpa/s was ˜125°C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325°C. This suggests that cascade disordering competes with radiation induced solute segregation.

  18. Precipitation in Ni-Si during electron and ion irradiation

    International Nuclear Information System (INIS)

    Lucas, G.E.; Zama, T.; Ishino, S.

    1986-01-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2x10 -5 dpa/s to 2x10 -3 dpa/s at temperatures in the range 25 0 C to 450 0 C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3 Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3 Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2x10 -3 dpa/s was ∝125 0 C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325 0 C. This suggests that cascade disordering competes with radiation induced solute segregation. (orig.)

  19. Mutagenic effects of heavy ion irradiation on rice seeds

    International Nuclear Information System (INIS)

    Xu Xue; Liu Binmei; Zhang Lili; Wu Yuejin

    2012-01-01

    Three varieties of rice seeds were subjected to irradiation using low-energy and medium-energy ions. The damage and mutations induced by the ions were examined. In addition, genetic analysis and gene mapping of spotted leaf (spl) mutants were performed. Low-energy ions had no significant influence on germination, survival or seedling height, except for the survival of Nipponbare. Medium-energy ions had a significant influence on germination and survival but had no significant effect on seedling height. In the low-energy group, among 60,000 M 2 plants, 2823 putative morphological mutants were found, and the mutation frequency was approximately 4.71%. In the medium-energy group, 3132 putative morphological mutants were found, and the mutation frequency was approximately 5.22%. Five spl mutants (spl29–spl33) were obtained by ion irradiation, and the heredity of the spl mutants was stable. The characteristics of the spl mutants were found, by genetic analysis and preliminary mapping, to be controlled by a single recessive gene, and spl30 and spl33 were found to be new lesion-mimic mutants.

  20. Positron Annihilation Study of Ion-irradiated Si

    International Nuclear Information System (INIS)

    Shin, Jung Ki; Kwon, Jun Hyun; Lee, Jong Yong

    2009-01-01

    Structural parts like a spaceship, satellite and solar cell are composed of metal alloy or semiconductor materials. Especially, Si is used as a primary candidate alloy. But, manned and robotic missions to the Earth's moon and Mars are exposed to a continuous flux of Galactic Cosmic Rays (GCR) and occasional, but intense, fluxes of Solar Energetic Particles. These natural radiations impose hazards to manned exploration. Irradiation of cosmic particle induces various changes in the mechanical and physical properties of device steels. It is, therefore, important to investigate radiation damage to the component materials in semiconductor. The evolution of radiation-induced defects leads to degradation of the mechanical properties. One of them includes irradiation embrittlement, which can cause a loss of ductility and further increase the probability of a brittle fracture. It can be more dangerous in the space. Positron annihilation lifetime spectroscopy(PALS) have been applied to investigate the production of vacancy-type defects for Ion-irradiated Si wafer penetrated by H, He, O and Fe ions. Then, we carried out a comparison with an un-irradiated Si wafer

  1. Elastic wave from fast heavy ion irradiation on solids

    CERN Document Server

    Kambara, T; Kanai, Y; Kojima, T M; Nanai, Y; Yoneda, A; Yamazaki, Y

    2002-01-01

    To study the time-dependent mechanical effects of fast heavy ion irradiations, we have irradiated various solids by a short-bunch beam of 95 MeV/u Ar ions and observed elastic waves generated in the bulk. The irradiated targets were square-shaped plates of poly-crystals of metals (Al and Cu), invar alloy, ceramic (Al sub 2 O sub 3), fused silica (SiO sub 2) and single crystals of KC1 and LiF with a thickness of 10 mm. The beam was incident perpendicular to the surface and all ions were stopped in the target. Two piezo-electric ultrasonic sensors were attached to the surface of the target and detected the elastic waves. The elastic waveforms as well as the time structure and intensity of the beam bunch were recorded for each shot of a beam bunch. The sensor placed opposite to the beam spot recorded a clear waveform of the longitudinal wave across the material, except for the invar and fused silica targets. From its propagation time along with the sound velocity and the thickness of the target, the depth of the...

  2. Mutagenic effects of heavy ion irradiation on rice seeds

    Energy Technology Data Exchange (ETDEWEB)

    Xu Xue [School of Agronomy, Anhui Agricultural University, 130 Changjiang West Road, Hefei 230036 (China); Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China); Liu Binmei; Zhang Lili [Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China); Wu Yuejin, E-mail: yjwu@ipp.ac.cn [Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China)

    2012-11-01

    Three varieties of rice seeds were subjected to irradiation using low-energy and medium-energy ions. The damage and mutations induced by the ions were examined. In addition, genetic analysis and gene mapping of spotted leaf (spl) mutants were performed. Low-energy ions had no significant influence on germination, survival or seedling height, except for the survival of Nipponbare. Medium-energy ions had a significant influence on germination and survival but had no significant effect on seedling height. In the low-energy group, among 60,000 M{sub 2} plants, 2823 putative morphological mutants were found, and the mutation frequency was approximately 4.71%. In the medium-energy group, 3132 putative morphological mutants were found, and the mutation frequency was approximately 5.22%. Five spl mutants (spl29-spl33) were obtained by ion irradiation, and the heredity of the spl mutants was stable. The characteristics of the spl mutants were found, by genetic analysis and preliminary mapping, to be controlled by a single recessive gene, and spl30 and spl33 were found to be new lesion-mimic mutants.

  3. Polypropylene compositional evolution under 3.5 MeV He{sup +} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Abdesselam, M., E-mail: abdesselam_m@yahoo.fr [Faculte de Physique, USTHB, BP32, El Alia, 16111 BEZ (Algeria); Muller, D. [InESS, UMR7163, 23 rue du Loess, BP20, F-67037 Strasbourg Cedex 02 (France); Djebara, M.; Chami, A.C. [Faculte de Physique, USTHB, BP32, El Alia, 16111 BEZ (Algeria); Montgomery, P. [InESS, UMR7163, 23 rue du Loess, BP20, F-67037 Strasbourg Cedex 02 (France)

    2012-05-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 {mu}m in thickness. The fluence ranges from 2 Multiplication-Sign 10{sup 12} to 3.5 Multiplication-Sign 10{sup 15} cm{sup -2}. The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C({alpha}, {alpha})C) and hydrogen elastic recoil detection (H({alpha}, H){alpha}), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of {approx}5 Multiplication-Sign 10{sup 13} He{sup +} cm{sup -2}. The carbon depletion levels off at a fluence of {approx}5 Multiplication-Sign 10{sup 14} He{sup +} cm{sup -2} approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 Multiplication-Sign 10{sup -16} cm{sup 2}, respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He{sup +} beam is made.

  4. Polypropylene compositional evolution under 3.5 MeV He+ ion irradiation

    International Nuclear Information System (INIS)

    Abdesselam, M.; Muller, D.; Djebara, M.; Chami, A.C.; Montgomery, P.

    2012-01-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 μm in thickness. The fluence ranges from 2 × 10 12 to 3.5 × 10 15 cm −2 . The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C(α, α)C) and hydrogen elastic recoil detection (H(α, H)α), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of ∼5 × 10 13 He + cm −2 . The carbon depletion levels off at a fluence of ∼5 × 10 14 He + cm −2 approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 × 10 −16 cm 2 , respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He + beam is made.

  5. Polypropylene compositional evolution under 3.5 MeV He+ ion irradiation

    Science.gov (United States)

    Abdesselam, M.; Muller, D.; Djebara, M.; Chami, A. C.; Montgomery, P.

    2012-05-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 μm in thickness. The fluence ranges from 2 × 1012 to 3.5 × 1015 cm-2. The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C(α, α)C) and hydrogen elastic recoil detection (H(α, H)α), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of ˜5 × 1013 He+ cm-2. The carbon depletion levels off at a fluence of ˜5 × 1014 He+ cm-2 approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 × 10-16 cm2, respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He+ beam is made.

  6. Comparison of swelling for structural materials on neutron and ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Loomis, B.A.

    1986-03-01

    The swelling of V-base alloys, Type 316 stainless steel, Fe-25Ni-15Cr alloys, ferritic steels, Cu, Ni, Nb-1% Zr, and Mo on neutron irradiation is compared with the swelling for these materials on ion irradiation. The results of this comparison show that utilization of the ion-irradiation technique provides for a discriminative assessment of the potential for swelling of candidate materials for fusion reactors.

  7. Changes of surface structure of Ni, W and chromium-nickel steel Cr18Ni10 irradiated by high fluences of krypton ions with high energies

    International Nuclear Information System (INIS)

    Didyk, A.Yu.; Semina, V.K.; Khalil, A.; Suvorov, A.L.; Stepanov, A.Eh.; Cheblukov, Yu.N.

    1999-01-01

    The surfaces of W single crystal, Ni polycrystal and chromium-nickel steel, irradiated by Kr ions with energy 305 and 245 MeV up to the fluences 2*10 15 and 3*10 15 ion/cm 2 , were studied by means of scanning electron microscopy. The evaporation coefficients of material surfaces were estimated on the base of changes of surface relief. The values of these coefficients turned out much more than ones predicted by the inelastic sputtering model. The method of 'step' was offered and realized for the more correct estimations evaporation coefficient on the Ni example. The phenomenological model explaining the observed phenomena is introduced

  8. The desing study of high voltage plasma focus for a large fluence neutron source by using a water capacitor bank

    International Nuclear Information System (INIS)

    Ueno, Isao; Kobata, Tadasuke

    1983-01-01

    A new possibility for high intensity neutron source (HINS) would be opened by the plasma focus device if we have a high voltage capacitor bank. A scaling law of neutron yield for D-T gas discharge in plasma focus device is obtained after Imshennik, Filippov and Filippova. The resulting scaling law shows the realizability of the D-T HINS by the use of plasma focus, provided that the device is operated under a high voltage condition. Until now, it has been difficult to construct the high voltage capacitor bank of long life, for example with V 0 =300kV, C 0 =200μF and L 0 --5nH necessary in the level of HINS. It becomes possible to design this capacitor bank by using the coaxial water capacitor which has been developed for the electron and ion beam accelerator. The size of a capacitor designed for V 0 =300kV, C 0 =1μF is phi5m x 22m. Two hundred capacitors are used in parallel in order to get the 200μF. (author)

  9. Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

    International Nuclear Information System (INIS)

    Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun

    2010-01-01

    Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

  10. Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2010-10-15

    Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

  11. Ion irradiation of AZO thin films for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Alberti, Alessandra [CNR-IMM, via Strada VIII 5, 95121 Catania (Italy); Mirabella, Salvatore; Ruffino, Francesco [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Terrasi, Antonio, E-mail: antonio.terrasi@ct.infn.it [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy)

    2017-02-01

    Highlights: • Evidence of electrical good quality AZO ultra thin films without thermal annealing. • Evidence of the main role of Oxygen vs. structural parameters in controlling the electrical performances of AZO. • Evidence of the role of the ion irradiation in improving the electrical properties of AZO ultra thin films. • Synthesis of AZO thin films on flexible/plastic substrates with good electrical properties without thermal processes. - Abstract: Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O{sup +} or Ar{sup +} ion beams (30–350 keV, 3 × 10{sup 15}–3 × 10{sup 16} ions/cm{sup 2}) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

  12. Ion irradiation effect of alumina and its luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Aoki, Yasushi; Yamamoto, Shunya; Naramoto, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; My, N T

    1997-03-01

    The luminescence spectra of single crystalline alpha-alumina and ruby which has 0.02% of Cr{sub 2}O{sub 3} as a impurity, induced by 200 keV He{sup +} and Ar{sup +} irradiation were measured at room temperature as a function of irradiation dose. The analysis of the measured spectra showed the existence of three main luminescence features in the wavelength region of 250 to 350 nm, namely anionic color centers, F-center at 411 nm and F{sup +}-center at 330 nm and a band observed around 315 nm. As alpha-alumina was irradiated with He{sup +}, F-center and F{sup +}-center luminescence grew and decayed, but the behaviors of those were different from each other. It seems that a concentration quenching occurred on the F-center luminescence in the dose range above 1x10{sup 14} He/cm{sup 2}. Furthermore, F-center luminescence was strongly suppressed in ruby, compared with that in alumina. On the other hand, the luminescence band around 315 nm appeared only in the early stage of irradiation and did not show its growth part. The dose dependent behavior was similar to that of Cr{sup 3+} emission at 695 nm (R-line) in ruby in both cases of He{sup +} and Ar{sup +} irradiation. Based on the experimental results mentioned above, the processes of defect formation and excitation in alumina in the early stage of ion irradiation will be discussed. (author)

  13. Data acquisition system for light-ion irradiation creep experiment

    International Nuclear Information System (INIS)

    Hendrick, P.L.; Whitaker, T.J.

    1979-07-01

    Software was developed for a PDP11V/03-based data acquisition system to support the Light-Ion Irradiation Creep Experiment installed at the University of Washington Tandem Van de Graaff Accelerator. The software consists of a real-time data acquisition and storage program, DAC04, written in assembly language. This program provides for the acquisition of up to 30 chennels at 100 Hz, data averaging before storage on disk, alarming, data table display, and automatic disk switching. All analog data are acquired via an analog-to-digital converter subsystem having a resolution of 14 bits, a maximum throughput of 20 kHz, and an overall system accuracy of +-0.01%. These specifications are considered essential for the long-term measurement of irradiation creep strains and temperatures during the light-ion bombardment of irradiation creep specimens. The software package developed also contains a collection of FORTRAN programs designed to monitor a test while in progress. These programs use the foreground/background feature of the RT-11 operating system. The background programs provide a variety of services. The program, GRAFTR, allows transient data (i.e., prior to averaging) to be graphed at the graphics terminal. The program, GRAFAV, allows averaged data to be read from disk and displayed graphically at the terminal. The program, TYPAV, reads averaged data from disk and displays it at the terminal in tabular form. Other programs allow text messages to be written to disk, read from disk, and allow access to DAC04 initialization data. 5 figures, 18 tables

  14. Short Communication on "In-situ TEM ion irradiation investigations on U3Si2 at LWR temperatures"

    Science.gov (United States)

    Miao, Yinbin; Harp, Jason; Mo, Kun; Bhattacharya, Sumit; Baldo, Peter; Yacout, Abdellatif M.

    2017-02-01

    The radiation-induced amorphization of U3Si2 was investigated by in-situ transmission electron microscopy using 1 MeV Kr ion irradiation. Both arc-melted and sintered U3Si2 specimens were irradiated at room temperature to confirm the similarity in their responses to radiation. The sintered specimens were then irradiated at 350 °C and 550 °C up to 7.2 × 1015 ions/cm2 to examine their amorphization behavior under light water reactor (LWR) conditions. U3Si2 remains crystalline under irradiation at LWR temperatures. Oxidation of the material was observed at high irradiation doses.

  15. The response of dispersion-strengthened copper alloys to high fluence neutron irradiation at 415 degrees C

    International Nuclear Information System (INIS)

    Edwards, D.J.; Newkirk, J.W.; Garner, F.A.; Hamilton, M.L.; Nadkarni, A.; Samal, P.

    1993-01-01

    Various oxide-dispersion-strengthened copper alloys have been irradiated to 150 dpa at 415 degrees C in the Fast Flux Test Facility (FFTF). The Al 2 O 3 -strengthened GlidCop TM alloys, followed closely by a HfO 2 -strengthened alloy, displayed the best swelling resistance, electrical conductivity, and tensile properties. The conductivity of the HfO 2 -strengthened alloy reached a plateau at the higher levels of irradiation, instead of exhibiting the steady decrease in conductivity observed in the other alloys. A high initial oxygen content results in significantly higher swelling for a series of castable oxide-dispersion-strengthened alloys, while a Cr 2 O 3 -strengthened alloy showed poor resistance to radiation

  16. Ion-irradiation-induced phase transformation in rare earth sesquioxides (Dy2O3,Er2O3,Lu2O3)

    International Nuclear Information System (INIS)

    Tang, M.; Lu, P.; Valdez, J.A.; Sickafus, K.E.

    2006-01-01

    Polycrystalline pellets of cubic C-type rare earth structure (Ia3) Dy 2 O 3 , Er 2 O 3 , and Lu 2 O 3 were irradiated at cryogenic temperature (120 K) with 300 keV Kr ++ ions to a maximum fluence of 1x10 20 Kr/m 2 . Irradiated specimens were examined using grazing incidence x-ray diffraction and transmission electron microscopy. Ion irradiation leads to different radiation effects in these three materials. First, Dy 2 O 3 begins to transform to a monoclinic B-type rare earth structure (C2/m) at a peak dose of ∼5 displacements per atom (dpa) (corresponding to a fluence of 2x10 19 Kr/m 2 ). This transformation is nearly complete at a peak dose of 25 dpa (a fluence of 1x10 20 Kr/m 2 ). Er 2 O 3 also transforms to the B-type structure, but the transformation starts at a higher irradiation dose of about 15-20 dpa [a fluence of about (6-8)x10 19 Kr/m 2 ]. Lu 2 O 3 was found to maintain the C-type structure even at the highest irradiation dose of 25 dpa (a fluence of 1x10 20 Kr/m 2 ). No C-to-B transformation was observed in Lu 2 O 3 . The irradiation dose dependence of the C-to-B phase transformation observed in Dy 2 O 3 , Er 2 O 3 , and Lu 2 O 3 is closely related to the temperature dependence of the C-to-B phase transformation found in phase diagrams for these three materials

  17. The effect of fission-energy Xe ion irradiation on the structural integrity and dissolution of the CeO{sub 2} matrix

    Energy Technology Data Exchange (ETDEWEB)

    Popel, A.J., E-mail: apopel@cantab.net [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge, CB2 3EQ (United Kingdom); Department of Materials, Imperial College London, London, SW7 2AZ (United Kingdom); Le Solliec, S.; Lampronti, G.I.; Day, J. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge, CB2 3EQ (United Kingdom); Petrov, P.K. [Department of Materials and London Centre for Nanotechnology, Imperial College London, London, SW7 2AZ (United Kingdom); Farnan, I. [Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge, CB2 3EQ (United Kingdom)

    2017-02-15

    This work considers the effect of fission fragment damage on the structural integrity and dissolution of the CeO{sub 2} matrix in water, as a simulant for the UO{sub 2} matrix of spent nuclear fuel. For this purpose, thin films of CeO{sub 2} on Si substrates were produced and irradiated by 92 MeV {sup 129}Xe{sup 23+} ions to a fluence of 4.8 × 10{sup 15} ions/cm{sup 2} to simulate fission damage that occurs within nuclear fuels along with bulk CeO{sub 2} samples. The irradiated and unirradiated samples were characterised and a static batch dissolution experiment was conducted to study the effect of the induced irradiation damage on dissolution of the CeO{sub 2} matrix. Complex restructuring took place in the irradiated films and the irradiated samples showed an increase in the amount of dissolved cerium, as compared to the corresponding unirradiated samples. Secondary phases were also observed on the surface of the irradiated CeO{sub 2} films after the dissolution experiment. - Highlights: • Ion irradiation induced microstructural rearrangements in CeO{sub 2} thin films. • Ion irradiation reduced aqueous durability of bulk and thin film CeO{sub 2} samples. • Secondary phases observed from dissolution of irradiated CeO{sub 2} films in di-water.

  18. Ion irradiation synthesis of Ag–Au bimetallic nanospheroids in SiO{sub 2} glass substrate with tunable surface plasmon resonance frequency

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Xuan; Yu, Ruixuan; Takayanagi, Shinya [Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido 060–8628 (Japan); Shibayama, Tamaki; Watanabe, Seiichi [Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido 060–8628 (Japan)

    2013-08-07

    Ag–Au bimetallic nanospheroids with tunable localized surface plasmon resonance (LSPR) were synthesized by 100 keV Ar–ion irradiation of 30 nm Ag–Au bimetallic films deposited on SiO{sub 2} glass substrates. A shift of the LSPR peaks toward shorter wavelengths was observed up to an irradiation fluence of 1.0 × 10{sup 17} cm{sup −2}, and then shifted toward the longer wavelength because of the increase of fragment volume under ion irradiation. Further control of LSPR frequency over a wider range was realized by modifying the chemical components. The resulting LSPR frequencies lie between that of the pure components, and an approximate linear shift of the LSPR toward the longer wavelength with the Au concentration was achieved, which is in good agreement with the theoretical calculations based on Gans theory. In addition, the surface morphology and compositions were examined with a scanning electron microscope equipped with an energy dispersive spectrometer, and microstructural characterizations were performed using a transmission electron microscope. The formation of isolated photosensitive Ag–Au nanospheroids with a FCC structure partially embedded in the SiO{sub 2} substrate was confirmed, which has a potential application in solid-state devices.

  19. Fuels and materials research under the high neutron fluence using a fast reactor Joyo and post-irradiation examination facilities

    International Nuclear Information System (INIS)

    Soga, Tomonori; Ito, Chikara; Aoyama, Takafumi; Suzuki, Soju

    2009-01-01

    The experimental fast reactor Joyo at Oarai Research and Development Center (ORDC) of Japan Atomic Energy Agency (JAEA) is Japan's sodium-cooled fast reactor (FR). In 2003, this reactor's upgrade to the 140MWt MK-III core was completed to increase the irradiation testing capability. The MK-III core provides the fast neutron flux of 4.0x10 15 n/cm 2 s as an irradiation test bed for improving the fuels and material of FR in Japan. Three post-irradiation examination (PIE) facilities named FMF, MMF and AGF related to Joyo are in ORDC. Irradiated subassemblies and core components are carried into the FMF (Fuel Monitoring Facility) and conducted nondestructive examinations. Each subassembly is disassembled to conduct some destructive examinations and to prepare the fuel and material samples for further detailed examinations. Fuel samples are sent to the AGF (Alpha-Gamma Facility), and material samples are sent to the MMF (Materials Monitoring Facility). These overall and elaborate data provided by PIE contribute to investigate the irradiation effect and behavior of fuels and materials. This facility complex is indispensable to promote the R and D of FR in Japan. And, the function and technology of irradiation test and PIE enable to contribute to the R and D of innovative fission or fusion reactor material which will be required to use under the high neutron exposure. (author)

  20. Late Effects of Heavy Ion Irradiation on Ex Vivo Osteoblastogenesis and Cancellous Bone Microarchitecture

    Science.gov (United States)

    Tran, Luan Hoang; Alwood, Joshua; Kumar, Akhilesh; Limoli, C. L.; Globus, Ruth

    2012-01-01

    Prolonged spaceflight causes degeneration of skeletal tissue with incomplete recovery even after return to Earth. We hypothesize that heavy ion irradiation, a component of Galactic Cosmic Radiation, damages osteoblast progenitors and may contribute to bone loss during long duration space travel beyond the protection of the Earth's magnetosphere. Male, 16 week old C57BL6/J mice were exposed to high LET (56 Fe, 600MeV) radiation using either low (5 or 10cGy) or high (50 or 200cGy) doses at the NASA Space Radiation Lab and were euthanized 3 - 4, 7, or 35 days later. Bone structure was quantified by microcomputed tomography (6.8 micron pixel size) and marrow cell redox assessed using membrane permeable, free radical sensitive fluorogenic dyes. To assess osteoblastogenesis, adherent marrow cells were cultured ex vivo, then mineralized nodule formation quantified by imaging and gene expression analyzed by RT PCR. Interestingly, 3 - 4 days post exposure, fluorogenic dyes that reflect cytoplasmic generation of reactive nitrogen/oxygen species (DAF FM Diacetate or CM H2DCFDA) revealed irradiation (50cGy) reduced free radical generation (20-45%) compared to sham irradiated controls. Alternatively, use of a dye showing relative specificity for mitochondrial superoxide generation (MitoSOX) revealed an 88% increase compared to controls. One week after exposure, reactive oxygen/nitrogen levels remained lower(24%) relative to sham irradiated controls. After one month, high dose irradiation (200 cGy) caused an 86% decrement in ex vivo nodule formation and a 16-31% decrement in bone volume to total volume and trabecular number (50, 200cGy) compared to controls. High dose irradiation (200cGy) up regulated expression of a late osteoblast marker (BGLAP) and select genes related to oxidative metabolism (Catalase) and DNA damage repair (Gadd45). In contrast, lower doses (5, 10cGy) did not affect bone structure or ex vivo nodule formation, but did down regulate iNOS by 0.54 - 0.58 fold

  1. High fluence swift heavy ion structure modification of the SiO{sub 2}/Si interface and gate insulator in 65 nm MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Yao [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gao, Bo, E-mail: gaobo@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Willis, Maureen [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); Guan, Mingyue [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

    2017-04-01

    In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO{sub 2}/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO{sub 2} and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

  2. Glycogen synthase kinase-3β facilitates cell apoptosis induced by high fluence low-power laser irradiation through acceleration of Bax translocation

    Science.gov (United States)

    Huang, Lei; Wu, Shengnan; Xing, Da

    2011-03-01

    Glycogen synthase kinase-3β (GSK-3β) is a critical activator of cell apoptosis induced by a diverse array of insults. However, the effects of GSK-3β on the human lung adenocarcinoma cell (ASTC-a-1) apoptosis induced by high fluence low-power laser irradiation (HF-LPLI) are not clear. Here, we showed that GSK-3β was constantly translocated from cytoplasm to nucleus and activated during HF-LPLI-induced cell apoptosis. In addition, we found that co-overexpression of YFP-GSK-3β and CFP-Bax in ASTC-a-1 cells accelerated both Bax translocations to mitochondria and cell apoptosis, compared to the cells expressed CFP-Bax only under HF-LPLI treatment, indicating that GSK-3β facilitated ASTC-a-1 cells apoptosis through acceleration mitochondrial translocation of Bax. Our results demonstrate that GSK-3β exerts some of its pro-apoptotic effects in ASTC-a-1 cells by regulating the mitochondrial localization of Bax, a key component of the intrinsic apoptotic cascade.

  3. Depth distribution of Frank loop defects formed in ion-irradiated stainless steel and its dependence on Si addition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Dongyue, E-mail: dychen@safety.n.t.u-tokyo.ac.jp [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan); Murakami, Kenta [The University of Tokyo, Nuclear Professional School, School of Engineering, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki 319-1188 (Japan); Dohi, Kenji; Nishida, Kenji; Soneda, Naoki [Central Research Institute of Electric Power Industry, 2-11-1 Iwado-kita, Komae, Tokyo 201-8511 (Japan); Li, Zhengcao, E-mail: zcli@tsinghua.edu.cn [Tsinghua University, School of Materials Science and Engineering, Beijing 100084 (China); Liu, Li; Sekimura, Naoto [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-12-15

    Although heavy ion irradiation is a good tool to simulate neutron irradiation-induced damages in light water reactor, it produces inhomogeneous defect distribution. Such difference in defect distribution brings difficulty in comparing the microstructure evolution and mechanical degradation between neutron and heavy ion irradiation, and thus needs to be understood. Stainless steel is the typical structural material used in reactor core, and could be taken as an example to study the inhomogeneous defect depth distribution in heavy ion irradiation and its influence on the tested irradiation hardening by nano-indentation. In this work, solution annealed stainless steel model alloys are irradiated by 3 MeV Fe{sup 2+} ions at 400 °C to 3 dpa to produce Frank loops that are mainly interstitial in nature. The silicon content of the model alloys is also tuned to change point defect diffusion, so that the loop depth distribution influenced by diffusion along the irradiation beam direction could be discussed. Results show that in low Si (0% Si) and base Si (0.42% Si) samples the depth distribution of Frank loop density quite well matches the dpa profile calculated by the SRIM code, but in high Si sample (0.95% Si), the loop number density in the near-surface region is very low. One possible explanation could be Si’s role in enhancing the effective vacancy diffusivity, promoting recombination and thus suppressing interstitial Frank loops, especially in the near-surface region, where vacancies concentrate. By considering the loop depth distribution, the tested irradiation hardening is successfully explained by the Orowan model. A hardening coefficient of around 0.30 is obtained for all the three samples. This attempt in interpreting hardening results may make it easier to compare the mechanical degradation between different irradiation experiments.

  4. Effect of 520 MeV Kr{sup 20+} ion irradiation on the critical current density of Bi-2212 single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Terai, Takayuki; Ito, Yasuyuki [Tokyo Univ. (Japan). Faculty of Engineering; Kishio, Kouji

    1996-10-01

    Change in magnetic properties of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+y} (Bi-2212) single crystals due to Kr{sup 20+} ion irradiation is reported, focused on critical current density and irreversibility magnetic field. The Bi-2212 single crystal specimens (3x3x0.3 mm{sup 3}) were prepared by the floating zone method. Each specimen was irradiated with 520 MeV Kr{sup 20+} ions of 10{sup 10}-10{sup 11} cm{sup -2} in the fluence. Magnetic hysteresis was measured at 4.2K-60K with a vibrating sample magnetometer before and after irradiation. Very large enhancement was observed in critical current density and irreversibility magnetic field above 20K. (author)

  5. In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation

    Science.gov (United States)

    Kumar, Ashish; Singh, R.; Kumar, Parmod; Singh, Udai B.; Asokan, K.; Karaseov, Platon A.; Titov, Andrei I.; Kanjilal, D.

    2018-04-01

    A systematic investigation of radiation hardness of Schottky barrier diodes and GaN epitaxial layers is carried out by employing in-situ electrical resistivity and cross sectional transmission electron microscopy (XTEM) microstructure measurements. The change in the current transport mechanism of Au/n-GaN Schottky barrier diodes due to irradiation is reported. The role of irradiation temperature and ion type was also investigated. Creation of damage is studied in low and medium electron energy loss regimes by selecting different ions, Ag (200 MeV) and O (100 MeV) at various fluences at two irradiation temperatures (80 K and 300 K). GaN resistivity increases up to 6 orders of magnitude under heavy Ag ions. Light O ion irradiation has a much lower influence on sheet resistance. The presence of isolated defect clusters in irradiated GaN epilayers is evident in XTEM investigation which is explained on the basis of the thermal spike model.

  6. Guided-wave phase-matched second-harmonic generation in KTiOPO4 waveguide produced by swift heavy-ion irradiation

    Science.gov (United States)

    Cheng, Yazhou; Jia, Yuechen; Akhmadaliev, Shavkat; Zhou, Shengqiang; Chen, Feng

    2014-11-01

    We report on the guided-wave second-harmonic generation in a KTiOPO4 nonlinear optical waveguide fabricated by a 17 MeV O5+ ion irradiation at a fluence of 1.5×1015 ions/cm2. The waveguide guides light along both TE and TM polarizations, which is suitable for phase-matching frequency doubling. Second harmonics of green light at a wavelength of 532 nm have been generated through the KTiOPO4 waveguide platform under an optical pump of fundamental wave at 1064 nm in both continuous-wave and pulsed regimes, reaching optical conversion efficiencies of 5.36%/W and 11.5%, respectively. The propagation losses have been determined to be ˜3.1 and ˜5.7 dB/cm for the TE and TM polarizations at a wavelength of 632.8 nm, respectively.

  7. Dechanneling measurements of defect depth profiles and effective cross-channel distribution of misaligned atoms in ion irradiated gold

    International Nuclear Information System (INIS)

    Pronko, P.P.

    1975-01-01

    Defect depth profiles for self ion and He + irradiated gold are obtained from single and multiple scatter dechanneling analysis in single crystal gold films. Quantitative defect densities are obtained through use of atomic scattering cross sections. Integral damage profiles are extracted from the dechanneling spectra and subsequently differentiated to yield the volume concentration of defects as a function of depth. Results from the self ion irradiations suggest that incident ions produce defect distributions across depths much greater than predicted by random stopping theory. This is in agreement with TEM observations of others. Comparison of the experimental profiles is made with theoretical vacancy distributions predicted by defect diffusion in a radiation environment. Similarities are observed for the low fluence irradiations suggesting that profile characteristics may be controlled by rapid migration and loss of interstitials to the film surfaces during irradiation. Information on the across-channel distribution of misaligned atoms in the damaged films is obtained with the steady increase of transverse energy model applied to the dechanneling spectra. A predominance of slight misalignment is observed with no contribution to dechanneling coming from atoms displaced significantly close to the center of the channels. This is in keeping with what is expected for crystal distortions caused by the strain fields associated with vacancy cluster defects

  8. Dechanneling measurements of defect depth profiles and effective cross-channel distribution of misaligned atoms in ion-irradiated gold

    International Nuclear Information System (INIS)

    Pronko, P.P.

    1976-01-01

    Defect depth profiles for self-ion and He + irradiated gold are obtained from single and multiple scatter dechanneling analysis in single-crystal gold films. Quantitative defect densities are obtained through use of atomic-scattering cross sections. Integral damage profiles are extracted from the dechanneling spectra and subsequently differentiated to yield the volume concentration of defects as a function of depth. Results from the self-ion irradiations suggest that incident ions produce defect distributions across depths much greater than predicted by random stopping theory. This is in agreement with TEM observations of others. Comparison of the experimental profiles is made with theoretical vacancy distributions predicted by defect diffusion in a radiation environment. Similarities are observed for the low-fluence irradiations, suggesting that profile characteristics may be controlled by rapid migration and loss of interstitials to the film surfaces during irradiation. Information on the across-channel distribution of misaligned atoms in the damaged films is obtained with the steady increase of transverse energy model. A predominance of slight misalignment is observed with no contribution to dechanneling coming from atoms displaced significantly close to the center of the channels. This is in keeping with what is expected for crystal distortions caused by the strain fields associated with vacancy cluster defects. (Auth.)

  9. Microstructural evolution of Fe−22%Cr model alloy under thermal ageing and ion irradiation conditions studied by atom probe tomography

    Energy Technology Data Exchange (ETDEWEB)

    Korchuganova, Olesya A., E-mail: KorchuganovaOA@gmail.com [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Moscow (Russian Federation); State Scientific Center of the Russian Federation, Institute for Theoretical and Experimental Physics of National Research Centre “Kurchatov Institute”, 117218, Moscow (Russian Federation); Thuvander, Mattias [Chalmers University of Technology, SE-412 96, Göteborg (Sweden); Aleev, Andrey A.; Rogozhkin, Sergey V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Moscow (Russian Federation); State Scientific Center of the Russian Federation, Institute for Theoretical and Experimental Physics of National Research Centre “Kurchatov Institute”, 117218, Moscow (Russian Federation); Boll, Torben [Chalmers University of Technology, SE-412 96, Göteborg (Sweden); Kulevoy, Timur V. [State Scientific Center of the Russian Federation, Institute for Theoretical and Experimental Physics of National Research Centre “Kurchatov Institute”, 117218, Moscow (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Moscow (Russian Federation)

    2016-08-15

    Nanostructure evolution during ion irradiation of two thermally aged binary Fee22Cr alloys has been investigated using atom probe tomography. Specimens aged at 500 °C for 50 and 200 h were irradiated by 5.6 MeV Fe ions at room temperature up to fluences of 0.3 × 10{sup 15} ions/cm{sup 2} and 1 × 10{sup 15} ions/cm{sup 2}. The effect of irradiation on the material nanostructure was examined at a depth of 1 μm from the irradiated surface. The analysis of Cr radial concentration functions reveals that dense α′-phase precipitates in the 200 h aged alloy become diffuse and thereby larger when subjected to irradiation. On the other hand, less Cr-enriched precipitates in the alloy aged for 50 h are less affected. The CreCr pair correlation function analysis shows that matrix inhomogeneity decreases under irradiation. Irradiation leads to a decrease in the number density of diffuse clusters, whereas in the case of well-developed precipitates it remains unchanged.

  10. Microstructural evolution of Fe−22%Cr model alloy under thermal ageing and ion irradiation conditions studied by atom probe tomography

    International Nuclear Information System (INIS)

    Korchuganova, Olesya A.; Thuvander, Mattias; Aleev, Andrey A.; Rogozhkin, Sergey V.; Boll, Torben; Kulevoy, Timur V.

    2016-01-01

    Nanostructure evolution during ion irradiation of two thermally aged binary Fee22Cr alloys has been investigated using atom probe tomography. Specimens aged at 500 °C for 50 and 200 h were irradiated by 5.6 MeV Fe ions at room temperature up to fluences of 0.3 × 10 15 ions/cm 2 and 1 × 10 15 ions/cm 2 . The effect of irradiation on the material nanostructure was examined at a depth of 1 μm from the irradiated surface. The analysis of Cr radial concentration functions reveals that dense α′-phase precipitates in the 200 h aged alloy become diffuse and thereby larger when subjected to irradiation. On the other hand, less Cr-enriched precipitates in the alloy aged for 50 h are less affected. The CreCr pair correlation function analysis shows that matrix inhomogeneity decreases under irradiation. Irradiation leads to a decrease in the number density of diffuse clusters, whereas in the case of well-developed precipitates it remains unchanged.

  11. Microstructural evolution of Fesbnd 22%Cr model alloy under thermal ageing and ion irradiation conditions studied by atom probe tomography

    Science.gov (United States)

    Korchuganova, Olesya A.; Thuvander, Mattias; Aleev, Andrey A.; Rogozhkin, Sergey V.; Boll, Torben; Kulevoy, Timur V.

    2016-08-01

    Nanostructure evolution during ion irradiation of two thermally aged binary Fee22Cr alloys has been investigated using atom probe tomography. Specimens aged at 500 °C for 50 and 200 h were irradiated by 5.6 MeV Fe ions at room temperature up to fluences of 0.3 × 1015 ions/cm2 and 1 × 1015 ions/cm2. The effect of irradiation on the material nanostructure was examined at a depth of 1 μm from the irradiated surface. The analysis of Cr radial concentration functions reveals that dense α‧-phase precipitates in the 200 h aged alloy become diffuse and thereby larger when subjected to irradiation. On the other hand, less Cr-enriched precipitates in the alloy aged for 50 h are less affected. The CreCr pair correlation function analysis shows that matrix inhomogeneity decreases under irradiation. Irradiation leads to a decrease in the number density of diffuse clusters, whereas in the case of well-developed precipitates it remains unchanged.

  12. The near-infrared waveguide properties of an LGS crystal formed by swift Kr{sup 8+} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yu-Fan; Liu, Peng; Liu, Tao; Zhang, Lian [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University, Jinan 250100 (China); Sun, Jian-Rong; Wang, Zhi-Guang [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Wang, Xue-Lin, E-mail: xuelinwang@sdu.edu.cn [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University, Jinan 250100 (China)

    2013-11-15

    In this work, we report on the optical properties in the near-infrared region of a LGS crystal planar waveguide formed by swift heavy ion irradiation. The planar optical waveguide in a LGS crystal was fabricated by 330 MeV Kr{sup 8+}-ion implantation at a fluence of 1 × 10{sup 12} cm{sup −2}. The initial beam had an energy of 2.1 GeV and was slowed down by passing it through a 259 μm thick Al foil. The guided mode was measured using a prism coupler at a wavelength of 1539 nm. The near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. The FD-BPM was used to simulate the guided mode profile. The lattice damage induced by SHI irradiation in the LGS crystal was studied using micro-Raman spectroscopy. The Raman spectra are consistent with the stopping power distributions of the Kr{sup 8+} ions simulated by SRIM and with the micro-photograph of the waveguide taken by a microscope using polarized light.

  13. The near-infrared waveguide properties of an LGS crystal formed by swift Kr8+ ion irradiation

    Science.gov (United States)

    Zhou, Yu-Fan; Liu, Peng; Liu, Tao; Zhang, Lian; Sun, Jian-Rong; Wang, Zhi-Guang; Wang, Xue-Lin

    2013-11-01

    In this work, we report on the optical properties in the near-infrared region of a LGS crystal planar waveguide formed by swift heavy ion irradiation. The planar optical waveguide in a LGS crystal was fabricated by 330 MeV Kr8+-ion implantation at a fluence of 1 × 1012 cm-2. The initial beam had an energy of 2.1 GeV and was slowed down by passing it through a 259 μm thick Al foil. The guided mode was measured using a prism coupler at a wavelength of 1539 nm. The near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. The FD-BPM was used to simulate the guided mode profile. The lattice damage induced by SHI irradiation in the LGS crystal was studied using micro-Raman spectroscopy. The Raman spectra are consistent with the stopping power distributions of the Kr8+ ions simulated by SRIM and with the micro-photograph of the waveguide taken by a microscope using polarized light.

  14. The near-infrared waveguide properties of an LGS crystal formed by swift Kr8+ ion irradiation

    International Nuclear Information System (INIS)

    Zhou, Yu-Fan; Liu, Peng; Liu, Tao; Zhang, Lian; Sun, Jian-Rong; Wang, Zhi-Guang; Wang, Xue-Lin

    2013-01-01

    In this work, we report on the optical properties in the near-infrared region of a LGS crystal planar waveguide formed by swift heavy ion irradiation. The planar optical waveguide in a LGS crystal was fabricated by 330 MeV Kr 8+ -ion implantation at a fluence of 1 × 10 12 cm −2 . The initial beam had an energy of 2.1 GeV and was slowed down by passing it through a 259 μm thick Al foil. The guided mode was measured using a prism coupler at a wavelength of 1539 nm. The near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. The FD-BPM was used to simulate the guided mode profile. The lattice damage induced by SHI irradiation in the LGS crystal was studied using micro-Raman spectroscopy. The Raman spectra are consistent with the stopping power distributions of the Kr 8+ ions simulated by SRIM and with the micro-photograph of the waveguide taken by a microscope using polarized light

  15. MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

    International Nuclear Information System (INIS)

    Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

    2006-01-01

    We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

  16. Defects induced magnetic transition in Co doped ZnS thin films: Effects of swift heavy ion irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Shiv P., E-mail: shivpoojanbhola@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India); Pivin, J.C. [CSNSM, IN2P3-CNRS, Batiment 108, F-91405 Orsay Campus (France); Patel, M.K; Won, Jonghan [Materials Science and Technology Division, MST-8, P.O.Box 1663, Mail Stop G755, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Chandra, Ramesh [Nanoscience Laboratory, IIC, Indian Institute of Technology, Roorkee 247667 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, Lokendra [Physics Department, University of Allahabad, Allahabad 211002 (India)

    2012-07-15

    The effect of swift heavy ions (SHI) on magnetic ordering in ZnS thin films with Co ions substituted on Zn sites is investigated. The materials have been synthesized by pulsed laser deposition on substrates held at 600 Degree-Sign C for obtaining films with wurtzite crystal structure and it showed ferromagnetic ordering up to room temperature with a paramagnetic component. 120 MeV Ag ions have been used at different fluences of 1 Multiplication-Sign 10{sup 11} ions/cm{sup 2} and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2} for SHI induced modifications. The long range correlation between paramagnetic spins on Co ions was destroyed by irradiation and the material became purely paramagnetic. The effect is ascribed to the formation of cylindrical ion tracks due to the thermal spikes resulting from electron-phonon coupling. - Highlights: Black-Right-Pointing-Pointer Effect of swift heavy ions on magnetic ordering in Co doped ZnS thin films are presented. Black-Right-Pointing-Pointer Magnetization in the pristine films is composed of ferromagnetic and paramagnetic components. Black-Right-Pointing-Pointer The films become purely paramagnetic after swift heavy ions irradiation. Black-Right-Pointing-Pointer The magnetic transition is ascribed to the formation of ion track (or cylindrical defects) due to the thermal spikes.

  17. Fluence determination by scattering measurements

    CERN Document Server

    Albergo, S; Potenza, R; Tricomi, A; Pillon, M; Angarano, M M; Creanza, D; De Palma, M

    2000-01-01

    An alternative method to determine particle fluence is proposed, which is particularly suitable for irradiations with low-energy charged-particle beams. The fluence is obtained by measuring the elastic scattering produced by a composite thin target placed upstream of the sample. The absolute calibration is performed by comparison with the measured radioactivation of vanadium and copper samples. The composite thin target, made of aluminium, carbon and gold, allows not only the fluence to be measured, but also a continuous monitoring of the beam space distribution. Experimental results with a 27 MeV proton beam are reported and compared with Monte Carlo simulations. (7 refs).

  18. The effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased sup 1 sup 0 B-coated high-purity epitaxial GaAs thermal neutron detectors

    CERN Document Server

    Gersch, H K; Simpson, P A

    2002-01-01

    High-purity epitaxial GaAs sup 1 sup 0 B-coated thermal neutron detectors advantageously operate at room temperature without externally applied voltage. Sample detectors were systematically irradiated at fixed grid locations near the core of a 2 MW research reactor to determine their operational neutron dose threshold. Reactor pool locations were assigned so that fast and thermal neutron fluxes to the devices were similar. Neutron fluences ranged between 10 sup 1 sup 1 and 10 sup 1 sup 4 n/cm sup 2. GaAs detectors were exposed to exponential fluences of base ten. Ten detector designs were irradiated and studied, differentiated between p-i-n diodes and Schottky barrier diodes. The irradiated sup 1 sup 0 B-coated detectors were tested for neutron detection sensitivity in a thermalized neutron beam. Little damage was observed for detectors irradiated at neutron fluences of 10 sup 1 sup 2 n/cm sup 2 and below, but signals noticeably degraded at fluences of 10 sup 1 sup 3 n/cm sup 2. Catastrophic damage was appare...

  19. Radiation stability of nanocrystalline ZrN coatings irradiated with high energy Xe and Bi ions

    International Nuclear Information System (INIS)

    Skuratov, V.A.; Sokhatsky, A.S.; Uglov, V.V.; Zlotski, S.V.; Van Vuuren, A.J.; Neethling, Jan; O'Connell, J.

    2011-01-01

    Swift Xe and Bi ion irradiation effects in nanocrystalline ZrN coatings as a function of ion fluence are reported. Zirconium nitride films of different thickness (0.1, 3, 10 and 20 micrometers) synthesized by vacuum arc-vapour deposition in nanocrystalline state (average size of crystallites is ∼4 nm) were irradiated with 167 MeV Xe and 695 MeV Bi ions to fluences in the range 3x10 12 ÷2.6x10 15 cm -2 (Xe) and 10 12 x10 13 cm -2 (Bi) and studied using XRD and TEM techniques. No evidence of amorphization due to high level ionizing energy losses has been found. The measurements of lattice parameter have revealed nonmonotonic dependence of the stress level in irradiated samples on ion fluence. (authors)

  20. Ion irradiation damage in ilmenite under cryogenic conditions

    International Nuclear Information System (INIS)

    Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.

    1996-01-01

    A natural single crystal of ilmenite was irradiated at 100 K with 200 keV Ar 2+ . Rutherford backscattering spectroscopy and ion channeling with 2 MeV He + ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 x 10 15 Ar 2+ cm -2 , considerable near-surface He + ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 mm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO 3 ) and spinel (MgAl 2 O 4 ) to explore factors that may influence radiation damage response in oxides

  1. Quantitative analysis of genes regulating sensitivity to heavy ion irradiation in cultured cell lines of malignant choroid melanoma

    International Nuclear Information System (INIS)

    Kumagai, Ken; Adachi, Nanao; Nimura, Yoshinori

    2004-01-01

    As a treatment strategy for malignant melanoma, heavy ion irradiation has been planned in National Institute of Radiological Sciences (NIRS). However, the molecular biology of the malignant melanoma cell after irradiation of heavy ion is still unknown. In this study, we used resistant and sensitive cell lines of malignant melanoma to study the effects of heavy ion irradiation. Furthermore, gene expression profiling of early response genes for heavy ion irradiation was carried out on these cell lines using microarray technology. (author)

  2. Quantitative analysis of genes regulating sensitivity to heavy ion irradiation in cultured cell lines of malignant choroid melanoma

    International Nuclear Information System (INIS)

    Kumagai, Ken; Nimura, Yoshinori; Kato, Masaki; Seki, Naohiko; Miyahara, Nobuyuki; Aoki, Mizuho; Shino, Yayoi; Furusawa, Yoshiya; Mizota, Atsushi

    2005-01-01

    As a treatment strategy for malignant melanoma, heavy ion irradiation has been planned in National Institute of Radiological Sciences (NIRS). However, the molecular biology of the malignant melanoma cell after irradiation of heavy ion is still unknown. In this study, we used resistant and sensitive cell lines of malignant melanoma to study the effects of heavy ion irradiation. Furthermore, gene expression profiling of early response genes for heavy ion irradiation was carried out on these cell lines using microarray technology. (author)

  3. Evaluation of a combination tumor treatment using thermo-triggered liposomal drug delivery and carbon ion irradiation.

    Science.gov (United States)

    Kokuryo, Daisuke; Aoki, Ichio; Yuba, Eiji; Kono, Kenji; Aoshima, Sadahito; Kershaw, Jeff; Saga, Tsuneo

    2017-07-01

    The combination of radiotherapy with chemotherapy is one of the most promising strategies for cancer treatment. Here, a novel combination strategy utilizing carbon ion irradiation as a high-linear energy transfer (LET) radiotherapy and a thermo-triggered nanodevice is proposed, and drug accumulation in the tumor and treatment effects are evaluated using magnetic resonance imaging relaxometry and immunohistology (Ki-67, n = 15). The thermo-triggered liposomal anticancer nanodevice was administered into colon-26 tumor-grafted mice, and drug accumulation and efficacy was compared for 6 groups (n = 32) that received or did not receive the radiotherapy and thermo trigger. In vivo quantitative R 1 maps visually demonstrated that the multimodal thermosensitive polymer-modified liposomes (MTPLs) can accumulate in the tumor tissue regardless of whether the region was irradiated by carbon ions or not. The tumor volume after combination treatment with carbon ion irradiation and MTPLs with thermo-triggering was significantly smaller than all the control groups at 8 days after treatment. The proposed strategy of combining high-LET irradiation and the nanodevice provides an effective approach for minimally invasive cancer treatment. Copyright © 2017 The Author(s). Published by Elsevier Inc. All rights reserved.

  4. Microstructural stability of a self-ion irradiated lanthana-bearing nanostructured ferritic steel

    International Nuclear Information System (INIS)

    Pasebani, Somayeh; Charit, Indrajit; Burns, Jatuporn; Price, Lloyd M.; M Univ., College Station, TX; Shao, Lin; M Univ., College Station, TX

    2015-01-01

    Thermally stable nanofeatures with high number density are expected to impart excellent high temperature strength and irradiation stability in nanostructured ferritic steels (NFSs) which have potential applications in advanced nuclear reactors. A lanthana-bearing NFS (14LMT) developed via mechanical alloying and spark plasma sintering was used in this study. The sintered samples were irradiated by Fe 2+ ions to 10, 50 and 100 dpa at 30 °C and 500 °C. Microstructural and mechanical characteristics of the irradiated samples were studied using different microscopy techniques and nanoindentation, respectively. Overall morphology and number density of the nanofeatures remained unchanged after irradiation. Average radius of nanofeatures in the irradiated sample (100 dpa at 500 °C) was slightly reduced. A notable level of irradiation hardening and enhanced dislocation activity occurred after ion irradiation except at 30 °C and ≥50 dpa. Other microstructural features like grain boundaries and high density of dislocations also provided defect sinks to assist in defect removal.

  5. TEM study of damage recovery in SiC by swift Xe ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Skuratov, V.A., E-mail: skuratov@jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); O’Connell, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Sohatsky, A.S. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Neethling, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2014-05-01

    The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10{sup 13} cm{sup −2} restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide.

  6. TEM study of damage recovery in SiC by swift Xe ion irradiation

    International Nuclear Information System (INIS)

    Skuratov, V.A.; O’Connell, J.; Sohatsky, A.S.; Neethling, J.

    2014-01-01

    The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10 13 cm −2 restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide

  7. Simulation for evaluation of the multi-ion-irradiation Laboratory of TechnoFusion facility and its relevance for fusion applications

    International Nuclear Information System (INIS)

    Jimenez-Rey, D.; Mota, F.; Vila, R.; Ibarra, A.; Ortiz, Christophe J.; Martinez-Albertos, J.L.; Roman, R.; Gonzalez, M.; Garcia-Cortes, I.; Perlado, J.M.

    2011-01-01

    Thermonuclear fusion requires the development of several research facilities, in addition to ITER, needed to advance the technologies for future fusion reactors. TechnoFusion will focus in some of the priority areas identified by international fusion programmes. Specifically, the TechnoFusion Area of Irradiation of Materials aims at surrogating experimentally the effects of neutron irradiation on materials using a combination of ion beams. This paper justifies this approach using computer simulations to validate the multi-ion-irradiation Laboratory. The planned irradiation facility will investigate the effects of high energetic radiations on reactor-relevant materials. In a second stage, it will also be used to analyze the performance of such materials and evaluate newly designed materials. The multi-ion-irradiation Laboratory, both triple irradiation and high-energy proton irradiation, can provide valid experimental techniques to reproduce the effect of neutron damage in fusion environment.

  8. Preparation and Characterization of Ion-Irradiated Nanodiamonds as Photoacoustic Contrast Agents.

    Science.gov (United States)

    Fang, Chia-Yi; Chang, Cheng-Chun; Mou, Chung-Yuan; Chang, Huan-Cheng

    2015-02-01

    Highly radiation-damaged or irradiated nanodiamonds (INDs) are a new type of nanomaterial developed recently as a potential photoacoustic (PA) contrast agent for deep-tissue imaging. This work characterized in detail the photophysical properties of these materials prepared by ion irradiation of natural diamond powders using various spectroscopic methods. For 40-nm NDs irradiated with 40-keV He+ at a dose of 3 x 10(15) ions/cm2, an average molar extinction coefficient of 4.2 M-1 cm-1 per carbon atom was measured at 1064 nm. Compared with gold nanorods of similar dimensions (10 nm x 67 nm), the INDs have a substantially smaller (by > 4 orders of magnitude) molar extinction coefficient per particle. However, the deficit is readily compensated by the much higher thermal stability, stronger hydrophilic interaction with water, and a lower nanobubble formation threshold (~30 mJ/cm2) of the sp3-carbon-based nanomaterial. No sign of photodamage was detected after high-energy (>100 mJ/cm2) illumination of the INDs for hours. Cell viability assays at the IND concentration of up to 100 µg/mL showed that the nanomaterial is non-cytotoxic and potentially useful for long-term PA bioimaging applications.

  9. Object kinetic Monte Carlo model for neutron and ion irradiation in tungsten: Impact of transmutation and carbon impurities

    Science.gov (United States)

    Castin, N.; Bonny, G.; Bakaev, A.; Ortiz, C. J.; Sand, A. E.; Terentyev, D.

    2018-03-01

    We upgrade our object kinetic Monte Carlo (OKMC) model, aimed at describing the microstructural evolution in tungsten (W) under neutron and ion irradiation. Two main improvements are proposed based on recently published atomistic data: (a) interstitial carbon impurities, and their interaction with radiation-induced defects (point defect clusters and loops), are more accurately parameterized thanks to ab initio findings; (b) W transmutation to rhenium (Re) upon neutron irradiation, impacting the diffusivity of radiation defects, is included, also relying on recent atomistic data. These essential amendments highly improve the portability of our OKMC model, providing a description for the formation of SIA-type loops under different irradiation conditions. The model is applied to simulate neutron and ion irradiation in pure W samples, in a wide range of fluxes and temperatures. We demonstrate that it performs a realistic prediction of the population of TEM-visible voids and loops, as compared to experimental evidence. The impact of the transmutation of W to Re, and of carbon trapping, is assessed.

  10. Radiation damage and deuterium trapping in deuterium-ion-irradiated Fe–9Cr alloy

    Energy Technology Data Exchange (ETDEWEB)

    Iwakir, Hirotomo, E-mail: iwakiri@edu.u-ryukyu.ac.jp [Faculty and Graduate School of Education, University of the Ryukyus, Nishihara, Okinawa 903-0213 (Japan); Tani, Munechika [Interdisciplinary Graduate School of Engineering Sciences, Kyusyu University, Kasuga, Fukuoka 816-8580 (Japan); Watanabe, Yoshiyuki [Japan Atomic Energy Agency, Rokkasho, Aomori 039-3212 (Japan); Yoshida, Naoaki [Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

    2014-01-15

    Thermal desorption of deuterium (D{sub 2}) from deuterium-ion (D{sub 2}{sup +})-irradiated Fe–9Cr was correlated with the microstructural evolution of the alloy during irradiation with 8-keV D{sub 2}{sup +} ions following annealing to determine the retention and desorption behavior of the implanted deuterium and to identify effective traps for them, particularly at high temperature. After irradiation at 573 K, a new desorption stage formed between 650 and 1100 K at higher fluences, and cavities were observed using transmission electron microscopy. The total amount of trapped deuterium following irradiation with a fluence of 3.0 × 10{sup 22} ions/m{sup 2} was 6.8 × 10{sup 17} D{sub 2}/m{sup 2}, or approximately 0.007%. These results indicate that the deuterium atoms recombined to form D{sub 2} molecules at the surfaces of the cavities.

  11. Effect of periodic deuterium ion irradiation on deuterium retention and blistering in Tungsten

    Directory of Open Access Journals (Sweden)

    M. Oya

    2017-08-01

    Full Text Available The effect of periodic irradiation on Deuterium (D retention and blistering in Tungsten (W was investigated. W samples were exposed to D plasma at a fixed fluence while varying the irradiation cycle number (1-shot, 2-shots and 3-shots. Exposure energy and flux were ∼50eV and ∼1 ×1022 D m−2 s−1, respectively. Sample temperatures were 537K and 643K. At 573K, D retention and blister density decreased with increasing number of irradiation cycle. In contrast at 643K, D retention showed no dependence on number of irradiation cycle. Therefore, sample temperature during irradiation is an important parameter in comparing the results of continuous and periodic irradiation, especially in studies involving extremely-high-flux (>1024 D m−2 s−1 irradiation and fluence dependency of D retention.

  12. Heavy ion irradiation induces autophagy in irradiated C2C12 myoblasts and their bystander cells

    International Nuclear Information System (INIS)

    Hino, Mizuki; Tajika, Yuki; Hamada, Nobuyuki

    2010-01-01

    Autophagy is one of the major processes involved in the degradation of intracellular materials. Here, we examined the potential impact of heavy ion irradiation on the induction of autophagy in irradiated C2C12 mouse myoblasts and their non-targeted bystander cells. In irradiated cells, ultrastructural analysis revealed the accumulation of autophagic structures at various stages of autophagy (id est (i.e.) phagophores, autophagosomes and autolysosomes) within 20 min after irradiation. Multivesicular bodies (MVBs) and autolysosomes containing MVBs (amphisomes) were also observed. Heavy ion irradiation increased the staining of microtubule-associated protein 1 light chain 3 and LysoTracker Red (LTR). Such enhanced staining was suppressed by an autophagy inhibitor 3-methyladenine. In addition to irradiated cells, bystander cells were also positive with LTR staining. Altogether, these results suggest that heavy ion irradiation induces autophagy not only in irradiated myoblasts but also in their bystander cells. (author)

  13. Preliminary study on mutagenic effects of heavy ions irradiation on maize inbred lines

    International Nuclear Information System (INIS)

    Yu Lixia; Li Wenjian; Xie Hongmei; Chen Xuejun; Chen Jing

    2010-01-01

    In order to study mutagenic effects of different heavy ions irradiation on maize inbred lines,corn seeds of Zheng58, Lu9801, Jinxiang4C-1, CSR24001, 308 and 478 were irradiated with 12 C 6+ and 36 Ar 18+ ions. The experimental results showed that the germination rate and planting percent were different after irradiation. The wettish seeds had higher sensibility to heavy ion irradiation. The leaf type of the plant appeared visible changes in M 1 generation. In M 2 generation, great changes had taken place in economic traits, many of which are beneficial mutation. Some beneficia1 mutation could be stably inherited in M 3 generation. From the above, it can be predicted that heavy ions irradiation is an effective means of genetic improvement of maize. (authors)

  14. Comparison of deuterium retention for ion-irradiated and neutron-irradiated tungsten

    International Nuclear Information System (INIS)

    Oya, Yasuhisa; Kobayashi, Makoto; Okuno, Kenji; Shimada, Masashi; Calderoni, Pattrick; Oda, Takuji; Hara, Masanori; Hatano, Yuji; Watanabe, Hideo

    2014-01-01

    The behavior of D retentions for Fe 2+ irradiated tungsten with the damage of 0.025-3 dpa was compared with that for neutron irradiated tungsten with 0.025 dpa. The D 2 TDS spectra for Fe 2+ irradiated tungsten consisted of two desorption stages at 450 K and 550 K although that for neutron irradiated tungsten was composed of three stages and addition desorption stage was found around 750 K. The desorption rate of major desorption stage at 550 K increased as the number of dpa by Fe 2+ irradiation increased. In addition, the first desorption stage at 450 K was only found for the damaged samples, indicating that the second stage would be based on intrinsic defects or vacancy produced by Fe 2+ irradiation and the first stage should be the accumulation of D in mono vacancy leading to the lower activation energy, where the dislocation loop and vacancy was produced. The third one was only found for the neutron irradiation, showing the D trapping by void or vacancy cluster and the diffusion effect is also contributed due to high FWHM of TDS spectrum. It can be said that the D 2 TDS spectra for Fe 2+ -irradiated tungsten could not represent that for neutron-irradiated one, showing that the deuterium trapping and desorption mechanism for neutron-irradiated tungsten has a difference from that for ion-irradiated one. (author)

  15. Whiskers growth and self-healing in Ti-based metallic glasses during ion irradiation

    Science.gov (United States)

    Zhang, Kun; Hu, Zheng; Zhao, Ziqiang; Wei, Bingchen; Li, Yansen; Wei, Yuhang

    2018-04-01

    Ti-based metallic glasses were subjected to a 20 MeV Cl4+ ion radiation under liquid-nitrogen cooling. Their responses, as well as effects of the electronic excitation and nucleus-nucleus collision were evaluated. The collision cascade during irradiation typically changes the structure by increasing the liquid-like zone/cluster, or the content of the free volume. However, along the ion incident depth, the structure change is inhomogeneous. Numerous whiskers appear and aggregate on the side of the irradiation surface, which are several micrometers away from the edge. This corresponds with the maximum collision depth obtained by the Monte Carlo simulation, where nuclear loss plays a dominant role. Moreover, the liquid-like zone continually forms, which add to the whiskers growth and subsequent self-healing. Results suggest that the irradiation-induced local shear stress combines with the well-localized liquid-like zone results in the observed phenomena. This study demonstrates that metallic glasses have high morphological instability under ion irradiation, which assets can pave new paths for their further applications.

  16. Viscous surface flow induced on Ti-based bulk metallic glass by heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Kun [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Hu, Zheng [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Science and Technology on Vehicle Transmission Laboratory, China North Vehicle Research Institute, Beijing 100072 (China); Li, Fengjiang [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Wei, Bingchen, E-mail: weibc@imech.ac.cn [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China)

    2016-12-30

    Highlights: • Obvious smoothing and roughening phases on the Ti-based MG surface resulted, which correspond respectively to the normal and off-normal incidence angles. • Atomic force microscopy confirms two types of periodic ripples distributed evenly over the rough surface. • The irradiation-induced viscosity of MG is about 4×10{sup 12} Pa·s, which accords with the theoretical prediction for metallic glasses close to glass transition temperature. • Surface-confined viscous flow plays a dominant quantitative role, which is due to radiation-induced softening of the low-viscosity surface layer. - Abstract: Ti-based bulk metallic glass was irradiated by a 20 MeV Cl{sup 4+} ion beam under liquid-nitrogen cooling, which produced remarkable surface smoothing and roughening that respectively correspond to normal and off-normal incidence angles of irradiation. Atomic force microscopy confirms two types of periodic ripples distributed evenly over the rough glass surface. In terms of mechanism, irradiation-induced viscosity agrees with the theoretical prediction for metallic glasses near glass transition temperature. Here, a model is introduced, based on relaxation of confined viscous flow with a thin liquid-like layer, that explains both surface smoothing and ripple formation. This study demonstrates that bulk metallic glass has high morphological instability and low viscosity under ion irradiation, which assets can pave new paths for metallic glass applications.

  17. Swift heavy ion irradiation of Cu-Zn-Al and Cu-Al-Ni alloys.

    Science.gov (United States)

    Zelaya, E; Tolley, A; Condo, A M; Schumacher, G

    2009-05-06

    The effects produced by swift heavy ions in the martensitic (18R) and austenitic phase (β) of Cu based shape memory alloys were characterized. Single crystal samples with a surface normal close to [210](18R) and [001](β) were irradiated with 200 MeV of Kr(15+), 230 MeV of Xe(15+), 350 and 600 MeV of Au(26+) and Au(29+). Changes in the microstructure were studied with transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). It was found that swift heavy ion irradiation induced nanometer sized defects in the 18R martensitic phase. In contrast, a hexagonal close-packed phase formed on the irradiated surface of β phase samples. HRTEM images of the nanometer sized defects observed in the 18R martensitic phase were compared with computer simulated images in order to interpret the origin of the observed contrast. The best agreement was obtained when the defects were assumed to consist of local composition modulations.

  18. 75 MeV boron ion irradiation studies on Si PIN photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

    2013-12-01

    The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

  19. Ion irradiation damage in ilmenite at 100 K

    International Nuclear Information System (INIS)

    Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.

    1997-01-01

    A natural single crystal of ilmenite (FeTiO 3 ) was irradiated at 100 K with 200 keV Ar 2+ . Rutherford backscattering spectroscopy and ion channeling with MeV He + ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 x 10 15 Ar 2+ cm -2 , considerable near-surface He + ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO 3 ) and spinel (MgAl 2 O 4 ) to explore factors that may influence radiation damage response in oxides

  20. Ion irradiation damage in ilmenite at 100 K

    Science.gov (United States)

    Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.; Nord, G.L.

    1997-01-01

    A natural single crystal of ilmenite (FeTiO3) was irradiated at 100 K with 200 keV Ar2+. Rutherford backscattering spectroscopy and ion channeling with 2 MeV He+ ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 ?? 1015 Ar2+/cm2, considerable near-surface He+ ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO3) and spinel (MgAl2O4) to explore factors that may influence radiation damage response in oxides.

  1. Effect of Ion Irradiation in Cadmium Niobate Pyrochlores

    International Nuclear Information System (INIS)

    Jiang, Weilin; Weber, William J.; Thevuthasan, Suntharampillai; Boatner, Lynn A.

    2003-01-01

    Irradiation experiments have been performed for cadmium niobate pyrochlore (CdNb2O) single crystals at both 150 and 300 K using 1.0 MeV Au ions over fluences ranging from 0.01 to 0.10 ions/nm. In-situ 3.0 MeV He Rutherford backscattering spectrometry along the -axial channeling direction (RBS/C) has been applied to study the damage states ranging from small defect concentrations to a fully amorphous state. Results show that the crystal can be readily amorphized under the irradiation conditions. Room-temperature recovery of the defects produced at 150 K has been observed, while the defects produced at 300 K are thermally stable at room temperature. Results also indicate that the RBS/C analysis used in this study induced negligible damage in the near-surface regime. In addition, irradiation at and below room temperature using He and C3 ions leads to surface exfoliation at the corresponding damage peaks

  2. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    International Nuclear Information System (INIS)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S.; Sofferman, D. L.; Beskin, I.

    2013-01-01

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport

  3. Ion irradiation effects on ionic liquids interfaced with rf discharge plasmas

    International Nuclear Information System (INIS)

    Baba, K.; Kaneko, T.; Hatakeyama, R.

    2007-01-01

    The availability of plasma ion irradiation toward a gas-liquid interface is investigated in a rf discharge system incorporating an ionic liquid. The introduction of the ionic liquid to the plasma causes the formation of a sheath electric field on the ionic liquid surface, resulting in the acceleration of the ions to the ionic liquid and the generation of secondary electrons from the ionic liquid by the ion irradiation. These effects are found to advance the discharge process and enhance the plasma production

  4. Effect of ion irradiation on structural and electrical properties of BSCC thin films

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Kim, Sang Sub; Moon, Jong Ha

    2003-01-01

    Effects of oxygen ion irradiation and subsequent thermal annealing of Bi 2 Sr 2 Ca 1 Cu 2 O x (Bi-2212) films deposited on SrTiO 3 (001) using pulsed laser deposition were studied. It was found that compared to the simply heated film the ion irradiated and thermally annealed one showed a leaf-like morphology and an improved conducting behavior of Bi-2212 phase. Our results suggest that amorphization by oxygen ion bombardment and recrystallization by thermal annealing might be a suitable process for the preparation of patterned c-axis oriented Bi-2212 films with appropriate superconducting properties. (author)

  5. Optical properties of InxGa1-xP/InP grown at high fluence Ga+ implantation on InP using focused ion beam

    International Nuclear Information System (INIS)

    Fang, Hsin-Chiao; Liu, Chuan-Pu; Dhara, Sandip

    2011-01-01

    Single-crystalline InP(1 0 0) substrate was implanted by 30 keV Ga + ions with fluences of 1 x 10 16 -1.5 x 10 17 cm -2 followed by post-annealing treatment at 750 o C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga + -implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the In x Ga 1-x P phase is formed at a critical fluence of 7 x 10 16 cm -2 . The newly grown phase was identified with the appearance of Ga rich TO InP and In rich TO GaP modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification.

  6. Laser-induced plasma from pure and doped water-ice at high fluence by ultraviolet and infrared radiation - art. no. 70050X

    DEFF Research Database (Denmark)

    Schou, Jørgen; Matei, A.; Rodrigo, Katarzyna Agnieszka

    2008-01-01

    Ice made of ultrapure water or water doped with 1 % polymer (polyethylene glycol, "PEG") was irradiated by laser light with fluences between 2 and 80 J/cm(2) in the ultraviolet (UV) regime at 355 nm and in the infrared (IR) regime at 1064 nm in vacuum. In the UV regime there is a threshold for pl...... of ionization breakdown at the ice surface....

  7. Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences

    CERN Document Server

    Mekki, J; Glaser, M; Moll, M; Dusseau, L

    2010-01-01

    The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 x 10(15) n(eq)/cm(2) have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.

  8. Evaluation of strain-rate sensitivity of ion-irradiated austenitic steel using strain-rate jump nanoindentation tests

    Energy Technology Data Exchange (ETDEWEB)

    Kasada, Ryuta, E-mail: r-kasada@iae.kyoto-u.ac.jp [Institute of Advanced Energy, Kyoto University Gokasho, Uji 611-0011, Kyoto (Japan); Konishi, Satoshi [Institute of Advanced Energy, Kyoto University Gokasho, Uji 611-0011, Kyoto (Japan); Hamaguchi, Dai; Ando, Masami; Tanigawa, Hiroyasu [Japan Atomic Energy Agency, Rokkasho, Aomori (Japan)

    2016-11-01

    Highlights: • We examined strain-rate jump nanoindentation on ion-irradiated stainless steel. • We observed irradiation hardening of the ion-irradiated stainless steel. • We found that strain-rate sensitivity parameter was slightly decreased after the ion-irradiation. - Abstract: The present study investigated strain-rate sensitivity (SRS) of a single crystal Fe–15Cr–20Ni austenitic steel before and after 10.5 MeV Fe{sup 3+} ion-irradiation up to 10 dpa at 300 °C using a strain-rate jump (SRJ) nanoindentation test. It was found that the SRJ nanoindentation test is suitable for evaluating the SRS at strain-rates from 0.001 to 0.2 s{sup −1}. Indentation size effect was observed for depth dependence of nanoindentation hardness but not the SRS. The ion-irradiation increased the hardness at the shallow depth region but decreased the SRS slightly.

  9. Accumulation and recovery of defects in ion-irradiated nanocrystalline gold

    Energy Technology Data Exchange (ETDEWEB)

    Chimi, Y. E-mail: chimi@popsvr.tokai.jaeri.go.jp; Iwase, A.; Ishikawa, N.; Kobiyama, M.; Inami, T.; Okuda, S

    2001-09-01

    Effects of 60 MeV {sup 12}C ion irradiation on nanocrystalline gold (nano-Au) are studied. The experimental results show that the irradiation-produced defects in nano-Au are thermally unstable because of the existence of a large volume fraction of grain boundaries. This suggests a possibility of the use of nanocrystalline materials as irradiation-resistant materials.

  10. Investigating change of properties in gallium ion irradiation patterned single-layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China); Dong, Jinyao; Bai, Bing [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Xie, Guoxin [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2016-10-14

    Besides its excellent physical properties, graphene promises to play a significant role in electronics with superior properties, which requires patterning of graphene for device integration. Here, we presented the changes in properties of single-layer graphene before and after patterning using gallium ion beam. Combined with Raman spectra of graphene, the scanning capacitance microscopy (SCM) image confirmed that a metal–insulator transition occurred after large doses of gallium ion irradiation. The changes in work function and Raman spectra of graphene indicated that the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. The patterning width of graphene presented an increasing trend due to the scattering influence of the impurities and the substrate. - Highlights: • The scanning capacitance microscopy image confirmed a metal–insulator transition occurred after large doses of gallium ion irradiation. • The changes indicated the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. • The patterning width of graphene presented a increasing trend due to the scattering influence of the impurities and the substrate.

  11. Improvement of t