Insights on the cuprate high energy anomaly observed in ARPES

Energy Technology Data Exchange (ETDEWEB)

Moritz, B., E-mail: moritzb@slac.stanford.ed [Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Department of Physics and Astrophysics, University of North Dakota, Grand Forks, ND 58202 (United States); Johnston, S. [Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Department of Physics and Astronomy, University of Waterloo, Waterloo, ON N2L 3G1 (Canada); Devereaux, T.P. [Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305 (United States)

2010-07-15

Recently, angle-resolved photoemission spectroscopy has been used to highlight an anomalously large band renormalization at high binding energies in cuprate superconductors: the high energy 'waterfall' or high energy anomaly (HEA). The anomaly is present for both hole- and electron-doped cuprates as well as the half-filled parent insulators with different energy scales arising on either side of the phase diagram. While photoemission matrix elements clearly play a role in changing the aesthetic appearance of the band dispersion, i.e. creating a 'waterfall'-like appearance, they provide an inadequate description for the physics that underlies the strong band renormalization giving rise to the HEA. Model calculations of the single-band Hubbard Hamiltonian showcase the role played by correlations in the formation of the HEA and uncover significant differences in the HEA energy scale for hole- and electron-doped cuprates. In addition, this approach properly captures the transfer of spectral weight accompanying doping in a correlated material and provides a unifying description of the HEA across both sides of the cuprate phase diagram. We find that the anomaly demarcates a transition, or cross-over, from a quasiparticle band at low binding energies near the Fermi level to valence bands at higher binding energy, assumed to be of strong oxygen character.

Calculation of Energy Diagram of Asymmetric Graded-Band-Gap Semiconductor Superlattices.

Science.gov (United States)

Monastyrskii, Liubomyr S; Sokolovskii, Bogdan S; Alekseichyk, Mariya P

2017-12-01

The paper theoretically investigates the peculiarities of energy diagram of asymmetric graded-band-gap superlattices with linear coordinate dependences of band gap and electron affinity. For calculating the energy diagram of asymmetric graded-band-gap superlattices, linearized Poisson's equation has been solved for the two layers forming a period of the superlattice. The obtained coordinate dependences of edges of the conduction and valence bands demonstrate substantial transformation of the shape of the energy diagram at changing the period of the lattice and the ratio of width of the adjacent layers. The most marked changes in the energy diagram take place when the period of lattice is comparable with the Debye screening length. In the case when the lattice period is much smaller that the Debye screening length, the energy diagram has the shape of a sawtooth-like pattern.

Determining the band gap and mean kinetic energy of atoms from reflection electron energy loss spectra

International Nuclear Information System (INIS)

Vos, M.; Marmitt, G. G.; Finkelstein, Y.; Moreh, R.

2015-01-01

Reflection electron energy loss spectra from some insulating materials (CaCO 3 , Li 2 CO 3 , and SiO 2 ) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO 2 , good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E gap ) 1.5 . For CaCO 3 , the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li 2 CO 3 (7.5 eV) is the first experimental estimate

Status of the C-band RF System for the SPARC-LAB high brightness photo-injector

CERN Document Server

Boni, R.; Bellaveglia, M.; Di Pirro, G.; Ferrario, M.; Gallo, A.; Spataro, B.; Mostacci, A.; Palumbo, L.

2013-01-01

The high brightness photo-injector in operation at the SPARC-LAB facility of the INFN-LNF, Italy, consists of a 150 MeV S-band electron accelerator aiming to explore the physics of low emittance high peak current electron beams and the related technology. Velocity bunching techniques, SASE and Seeded FEL experiments have been carried out successfully. To increase the beam energy so improving the performances of the experiments, it was decided to replace one S-band travelling wave accelerating cavity, with two C-band cavities that allow to reach higher energy gain per meter. The new C-band system is in advanced development phase and will be in operation early in 2013. The main technical issues of the C-band system and the R&D activities carried out till now are illustrated in detail in this paper.

Description of highly perturbed bands in rare earth nuclei

International Nuclear Information System (INIS)

Joshi, P.C.; Sood, P.C.

1976-01-01

Recently some highly perturbed positive parity bands have been populated in odd-mass rare earth nuclei. The energy spacings and sometimes even the spin sequences are drastically different from the usual strong coupling rotational model picture. The levels belonging to 'odd and even' I+1/2 are found to make separate groupings. The levels belonging to odd values of I+1/2 are seen to be very much favoured in comparison to the levels for which I+1/2 is even. In some cases only the favoured levels have been identified. These bands have been studied in the frame-work of rotation aligned coupling scheme in which the odd neutron in the unique parity orbital (in this case the isub(13/2) orbital) is strongly decoupled from the body fixed symmetry axis by the Coriolis force so as to make the projection of its angular momentum α on the rotation axis approximately a good quantum number. A description of the energy levels is suggested by assigning the quantum number α-j to the favoured levels and α-j-1 to the unfavoured levels. The intraband transitions of the favoured and unfavoured bands are examined in comparison with those in the adjacent ground state bands in even-even nuclei. (author)

High-spin structure of 121Xe: triaxiality, band termination and signature inversion

International Nuclear Information System (INIS)

Timar, J.; Paul, E.S.; Beausang, C.W.; Joyce, M.J.; Sharpey-Schafer, J.F.

1995-01-01

High-spin states of the odd-neutron 121 Xe nucleus have been studied with Eurogam using the 96 Zr( 30 Si, 5n) 121 Xe fusion-evaporation reaction. The level scheme has been extended up to a tentative spin of 67/2h at an excitation energy of ∼ 14 MeV. Several new rotational bands have been observed and the previously known bands extended. Two of them lose their regular character at high spins, which may be interpreted as transition from collective behaviour to a regime of noncollective oblate states. The deduced high-spin structure is compared to Woods-Saxon TRS cranking and CSM calculations. Configurations of the bands have been suggested. The νh 1 1/2 band is interpreted as having a triaxial shape. Signature inversion and an unexpectedly large staggering of the B(M1)/B(E2) ratios has been found for one of the bands. Enhanced E1 transitions have been observed between the νd 5/2 and the νh 1 1/2 bands. (orig.)

Band structure of CdTe under high pressure

International Nuclear Information System (INIS)

Jayam, Sr. Gerardin; Nirmala Louis, C.; Amalraj, A.

2005-01-01

The band structures and density of states of cadmium telluride (CdTe) under various pressures ranging from normal to 4.5 Mbar are obtained. The electronic band structure at normal pressure of CdTe (ZnS structure) is analyzed and the direct band gap value is found to be 1.654 eV. CdTe becomes metal and superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The equilibrium lattice constant, bulk modulus and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E F )) gets enhanced after metallization, which leads to the superconductivity in CdTe. In our calculation, the metallization pressure (P M = 1.935 Mbar) and the corresponding reduced volume ((V/V 0 ) M = 0.458) are estimated. Metallization occurs via direct closing of band gap at Γ point. (author)

Energy band structure of Cr by the Slater-Koster interpolation scheme

International Nuclear Information System (INIS)

Seifu, D.; Mikusik, P.

1986-04-01

The matrix elements of the Hamiltonian between nine localized wave-functions in tight-binding formalism are derived. The symmetry adapted wave-functions and the secular equations are formed by the group theory method for high symmetry points in the Brillouin zone. A set of interaction integrals is chosen on physical ground and fitted via the Slater-Koster interpolation scheme to the abinito band structure of chromium calculated by the Green function method. Then the energy band structure of chromium is interpolated and extrapolated in the Brillouin zone. (author)

Current state of X-band accelerating structure high gradient test. Be held at high energy accelerator organization on April 15, 2005

International Nuclear Information System (INIS)

Watanabe, Ken; Higo, Toshiyasu

2005-01-01

XTF (X-band Test Facility, Old name is GLCTA) is the high gradient test facility for X-band acceleration. We have installed an X-band 60cm structure (KX01) in the April 2004 and have been processing it for more than 10 months. Now it is under test on long-term operation. We report here the high gradient test result to date. (author)

Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source

International Nuclear Information System (INIS)

Baillie, Devin; Aubin, J. St.; Fallone, B. G.; Steciw, S.

2013-01-01

Purpose: To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. Methods: An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. Results: When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV/m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show d max is at 2.15 cm for a 10 × 10 cm 2 field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. Conclusions: The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source.

Science.gov (United States)

Baillie, Devin; St Aubin, J; Fallone, B G; Steciw, S

2013-04-01

To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV∕m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show dmax is at 2.15 cm for a 10 × 10 cm(2) field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

Feasibility of producing a short, high energy s-band linear accelerator using a klystron power source

Energy Technology Data Exchange (ETDEWEB)

Baillie, Devin [Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Aubin, J. St. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Fallone, B. G. [Department of Physics, University of Alberta, 11322-89 Avenue, Edmonton, Alberta T6G 2G7 (Canada); Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Steciw, S. [Department of Medical Physics, Cross Cancer Institute, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada); Department of Oncology, Medical Physics Division, University of Alberta, 11560 University Avenue, Edmonton, Alberta T6G 1Z2 (Canada)

2013-04-15

Purpose: To use a finite-element method (FEM) model to study the feasibility of producing a short s-band (2.9985 GHz) waveguide capable of producing x-rays energies up to 10 MV, for applications in a linac-MR, as well as conventional radiotherapy. Methods: An existing waveguide FEM model developed by the authors' group is used to simulate replacing the magnetron power source with a klystron. Peak fields within the waveguide are compared with a published experimental threshold for electric breakdown. The RF fields in the first accelerating cavity are scaled, approximating the effect of modifications to the first coupling cavity. Electron trajectories are calculated within the RF fields, and the energy spectrum, beam current, and focal spot of the electron beam are analyzed. One electron spectrum is selected for Monte Carlo simulations and the resulting PDD compared to measurement. Results: When the first cavity fields are scaled by a factor of 0.475, the peak magnitude of the electric fields within the waveguide are calculated to be 223.1 MV/m, 29% lower than the published threshold for breakdown at this operating frequency. Maximum electron energy increased from 6.2 to 10.4 MeV, and beam current increased from 134 to 170 mA. The focal spot FWHM is decreased slightly from 0.07 to 0.05 mm, and the width of the energy spectrum increased slightly from 0.44 to 0.70 MeV. Monte Carlo results show d{sub max} is at 2.15 cm for a 10 Multiplication-Sign 10 cm{sup 2} field, compared with 2.3 cm for a Varian 10 MV linac, while the penumbral widths are 4.8 and 5.6 mm, respectively. Conclusions: The authors' simulation results show that a short, high-energy, s-band accelerator is feasible and electric breakdown is not expected to interfere with operation at these field strengths. With minor modifications to the first coupling cavity, all electron beam parameters are improved.

Design, Fabrication and High Power RF Test of a C-band Accelerating Structure for Feasibility Study of the SPARC photo-injector energy upgrade

CERN Document Server

Alesini, D.; Di Pirro, G.; Di Raddo, R.; Ferrario, M.; Gallo, A.; Lollo, V.; Marcellini, F.; Higo, T.; Kakihara, K.; Matsumoto, S.; Campogiani, G.; Mostacci, A.; Palumbo, L.; Persichelli, S.; Spizzo, V.; Verdú-Andrés, S.

2011-01-01

The energy upgrade of the SPARC photo-injector from 160 to more than 260 MeV will be done by replacing a low gradient 3m S-Band structure with two 1.4m high gradient C-band structures. The structures are travelling wave, constant impedance sections, have symmetric waveguide input couplers and have been optimized to work with a SLED RF input pulse. A prototype with a reduced number of cells has been fabricated and tested at high power in KEK (Japan) giving very good performances in terms of breakdown rates (10^6 bpp/m) at high accelerating gradient (>50 MV/m). The paper illustrates the design criteria of the structures, the fabrication procedure and the high power RF test results.

Determining the band gap and mean kinetic energy of atoms from reflection electron energy loss spectra

Energy Technology Data Exchange (ETDEWEB)

Vos, M. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Marmitt, G. G. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Instituto de Fisica da Universidade Federal do Rio Grande do Sul, Avenida Bento Goncalves 9500, 91501-970 Porto Alegre, RS (Brazil); Finkelstein, Y. [Nuclear Research Center — Negev, Beer-Sheva 84190 (Israel); Moreh, R. [Physics Department, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)

2015-09-14

Reflection electron energy loss spectra from some insulating materials (CaCO{sub 3}, Li{sub 2}CO{sub 3}, and SiO{sub 2}) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO{sub 2}, good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E{sub gap}){sup 1.5}. For CaCO{sub 3}, the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li{sub 2}CO{sub 3} (7.5 eV) is the first experimental estimate.

Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge

Energy Technology Data Exchange (ETDEWEB)

Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Furukawa, Takuro; Toma, Ryo; Yanagisawa, Susumu [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

2015-09-14

By means of a hybrid density-functional method, we investigate the tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge. We consider [001], [111], and [110] uniaxial tensility and (001), (111), and (110) biaxial tensility. Under the condition of no normal stress, we determine both normal compression and internal strain, namely, relative displacement of two atoms in the primitive unit cell, by minimizing the total energy. We identify those strain types which can induce the band-gap transition, and evaluate the critical strain coefficient where the gap transition occurs. Either normal compression or internal strain operates unfavorably to induce the gap transition, which raises the critical strain coefficient or even blocks the transition. We also examine how each type of tensile strain decreases the band-gap energy, depending on its orientation. Our analysis clearly shows that synergistic operation of strain orientation and band anisotropy has a great influence on the gap transition and the gap energy.

First-principles determination of band-to-band electronic transition energies in cubic and hexagonal AlGaInN alloys

Directory of Open Access Journals (Sweden)

F. L. Freitas

2016-08-01

Full Text Available We provide approximate quasiparticle-corrected band gap energies for quaternary cubic and hexagonal AlxGayIn1–x–yN semiconductor alloys, employing a cluster expansion method to account for the inherent statistical disorder of the system. Calculated values are compared with photoluminescence measurements and discussed within the currently accepted model of emission in these materials by carrier localization. It is shown that bowing parameters are larger in the cubic phase, while the range of band gap variation is bigger in the hexagonal one. Experimentally determined transition energies are mostly consistent with band-to-band excitations.

First-principles determination of band-to-band electronic transition energies in cubic and hexagonal AlGaInN alloys

Energy Technology Data Exchange (ETDEWEB)

Freitas, F. L., E-mail: felipelopesfreitas@gmail.com; Marques, M.; Teles, L. K. [Grupo de Materiais Semicondutores e Nanotecnologia, Instituto Tecnológico de Aeronáutica, 12228-900 São José dos Campos, SP (Brazil)

2016-08-15

We provide approximate quasiparticle-corrected band gap energies for quaternary cubic and hexagonal Al{sub x}Ga{sub y}In{sub 1–x–y}N semiconductor alloys, employing a cluster expansion method to account for the inherent statistical disorder of the system. Calculated values are compared with photoluminescence measurements and discussed within the currently accepted model of emission in these materials by carrier localization. It is shown that bowing parameters are larger in the cubic phase, while the range of band gap variation is bigger in the hexagonal one. Experimentally determined transition energies are mostly consistent with band-to-band excitations.

High spin rotational bands in Zn

Indian Academy of Sciences (India)

We present here some preliminary results from our studies in the. ~ ¼ region in which we have observed an yrast band structure in Zn extending to spin (41/2 ). ... gaps implies that nuclei may exhibit different shapes at different excitation energies. .... uration, identifying previously unobserved states up to an excitation energy ...

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

Science.gov (United States)

Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

2018-06-01

The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-Tc superconductors

International Nuclear Information System (INIS)

Moritz, B; Johnston, S; Greven, M; Shen, Z-X; Devereaux, T P; Schmitt, F; Meevasana, W; Motoyama, E M; Lu, D H; Kim, C; Scalettar, R T

2009-01-01

Recently, angle-resolved photoemission spectroscopy (ARPES) has been used to highlight an anomalously large band renormalization at high binding energies in cuprate superconductors: the high energy 'waterfall' or high energy anomaly (HEA). This paper demonstrates, using a combination of new ARPES measurements and quantum Monte Carlo simulations, that the HEA is not simply the by-product of matrix element effects, but rather represents a cross-over from a quasi-particle band at low binding energies near the Fermi level to valence bands at higher binding energy, assumed to be of strong oxygen character, in both hole- and electron-doped cuprates. While photoemission matrix elements clearly play a role in changing the aesthetic appearance of the band dispersion, i.e. the 'waterfall'-like behavior, they provide an inadequate description for the physics that underlies the strong band renormalization giving rise to the HEA. Model calculations of the single-band Hubbard Hamiltonian showcase the role played by correlations in the formation of the HEA and uncover significant differences in the HEA energy scale for hole- and electron-doped cuprates. In addition, this approach properly captures the transfer of spectral weight accompanying both hole and electron doping in a correlated material and provides a unifying description of the HEA across both sides of the cuprate phase diagram.

Calculation of the band gap energy of ionic crystals

International Nuclear Information System (INIS)

Aguado, A.; Lopez, J.M.; Alonso, J.A.; Ayuela, A.; Rivas S, J.F.; Berrondo, M.

1998-01-01

The band gap of alkali halides, alkaline-earth oxides, Al 2 O 3 and SiO 2 crystals has been calculated using the perturbed-ion model supplemented with some assumptions for the treatment of excited states. The gap is calculated in several ways: as a difference between one-electron energy eigenvalues and as a difference between the total energies of appropriate electronic states of the crystal, both at the HF level and with inclusion of Coulomb correlation effects. The results compare well with experimental band gap energies and with other theoretical calculations, suggesting that the picture of bonding and excitation given by the model can be useful in ionic materials. (Author)

Calculation of Energy Band Diagram of a Photoelectrochemical Water Splitting Cell

OpenAIRE

Cendula, P.; Tilley, S. D.; Gimenez, S.; Schmid, M.; Bisquert, J.; Graetzel, M.; Schumacher, J. O.

2014-01-01

A physical model is presented for a semiconductor electrode of a photoelectrochemical (PEC) cell, accounting for the potential drop in the Helmholtz layer. Hence both band edge pinning and unpinning are naturally included in our description. The model is based on the continuity equations for charge carriers and direct charge transfer from the energy bands to the electrolyte. A quantitative calculation of the position of the energy bands and the variation of the quasi-Fermi levels in the semic...

Stability of the split-band solution and energy gap in the narrow-band region of the Hubbard model

International Nuclear Information System (INIS)

Arai, T.; Cohen, M.H.

1980-01-01

By inserting quasielectron energies ω calculated from the fully renormalized Green's function of the Hubbard model obtained in the preceding paper into the exact expression of Galitskii and Migdal, the ground-state energy, the chemical potential, and the dynamic- and thermodynamic-stability conditions are calculated in the narrow-band region. The results show that as long as the interaction energy I is finite, electrons in the narrow-band region do not obey the Landau theory of Fermi liquids, and a gap appears between the lowest quasielectron energy ω and the chemical potential μ for any occupation n, regardless of whether the lower band is exactly filled or not. This unusual behavior is possible because, when an electron is added to the system of N electrons, the whole system relaxes due to the strong interaction, introducing a relaxation energy difference between the two quantities. We also show that all previous solutions which exhibit the split-band structure, including Hubbard's work, yield the same conclusion that electrons do not behave like Landau quasiparticles. However, the energy gap is calculated to be negative at least for some occupations n, demonstrating the dynamic instability of those solutions. They also exhibit thermodynamic instability for certain occupations, while the fully renormalized solution, having sufficient electron correlations built in, satisfies the dynamic and thermodynamic stability conditions for all occupations. When the lower band is nearly filled, the nature of the solution is shown to change, making the coherent motion of electrons with fixed k values more difficult. In the pathological limit where I=infinity, however, the gap vanishes, yielding a metallic state

Improved cache performance in Monte Carlo transport calculations using energy banding

Science.gov (United States)

Siegel, A.; Smith, K.; Felker, K.; Romano, P.; Forget, B.; Beckman, P.

2014-04-01

We present an energy banding algorithm for Monte Carlo (MC) neutral particle transport simulations which depend on large cross section lookup tables. In MC codes, read-only cross section data tables are accessed frequently, exhibit poor locality, and are typically too much large to fit in fast memory. Thus, performance is often limited by long latencies to RAM, or by off-node communication latencies when the data footprint is very large and must be decomposed on a distributed memory machine. The proposed energy banding algorithm allows maximal temporal reuse of data in band sizes that can flexibly accommodate different architectural features. The energy banding algorithm is general and has a number of benefits compared to the traditional approach. In the present analysis we explore its potential to achieve improvements in time-to-solution on modern cache-based architectures.

Superdeformed bands in 64147Gd83, a possible test of the existence of octupole correlations in superdeformed bands

International Nuclear Information System (INIS)

Zuber, K.; Balouka, D.; Beck, F.A.; Byrski, T.; Curien, D.; Duchene, G.; Gehringer, C.; Haas, B.; Merdinger, J.C.; Romain, P.; Santos, D.; Styczen, J.; Vivien, J.P.; Dudek, J.; Szymanski, Z.; Werner, T.

1990-01-01

Two discrete superdeformed bands (SD) have been identified in the nucleus 147 Gd. The transitions energies of the SD yrast band lie halfway between the γ-ray energies of the yrast SD band in 146 Gd while the transition energies of the excited band lie half way between the transition energies of the yrast SD band in 148 Gd. These two bands are shown to exhibit the presence of the pseudo SU(3) symmetry and also indicate the possible existence of octupole correlations at large elongations and high spins. (orig.)

Progress in high-energy laser technology

International Nuclear Information System (INIS)

Miyanaga, Noriaki; Kitagawa, Yoneyoshi; Nakatsuka, Masahiro; Kanabe, Tadashi; Okuda, Isao

2005-01-01

The technological development of high-energy lasers is one of the key issues in laser fusion research. This paper reviews several technologies on the Nd:glass laser and KrF excimer laser that are being used in the current laser fusion experiments and related plasma experiments. Based on the GEKKO laser technology, a new high-energy Nd: glass laser system, which can deliver energy from 10 kJ (boad-band operation) to 20 kJ (narrow-band operation), is under construction. The key topics in KrF laser development are improved efficiency and repetitive operation, which aim at the development of a laser driven for fusion reactor. Ultra-intense-laser technology is also very important for fast ignition research. The key technology for obtaining the petawatt output with high beam quality is reviewed. Regarding the uniform laser irradiation required for high-density compression, the beam-smoothing methods on the GEKKO XII laser are reviewed. Finally, we discuss the present status of MJ-class lasers throughout the world, and summarize by presenting the feasibility of various applications of the high-energy lasers to a wide range of scientific and technological fields. (author)

Effective Ginzburg–Landau free energy functional for multi-band isotropic superconductors

International Nuclear Information System (INIS)

Grigorishin, Konstantin V.

2016-01-01

Highlights: • The intergradient coupling of order parameters in a two-band superconductor plays important role and cannot be neglected. • A two-band superconductor must be characterized with a single coherence length and a single Ginzburg–Landau parameter. • Type-1.5 superconductors are impossible. • The free energy functional for a multi-band superconductor can be reduced to the effective single-band Ginzburg–Landau functional. - Abstract: It has been shown that interband mixing of gradients of two order parameters (drag effect) in an isotropic bulk two-band superconductor plays important role – such a quantity of the intergradients coupling exists that the two-band superconductor is characterized with a single coherence length and a single Ginzburg–Landau (GL) parameter. Other quantities or neglecting of the drag effect lead to existence of two coherence lengths and dynamical instability due to violation of the phase relations between the order parameters. Thus so-called type-1.5 superconductors are impossible. An approximate method for solving of set of GL equations for a multi-band superconductor has been developed: using the result about the drag effect it has been shown that the free-energy functional for a multi-band superconductor can be reduced to the GL functional for an effective single-band superconductor.

High-K rotational bands in {sup 174}Hf and {sup 175}Hf

Energy Technology Data Exchange (ETDEWEB)

Gjoerup, N L; Sletten, G [The Niels Bohr Institute, Roskilbe (Denmark); Walker, P M [Surrey Univ., Guildford (United Kingdom). Dept. of Physics; Bentley, M A [Daresbury Lab. (United Kingdom); Cullen, D M; Sharpey-Schafer, J F; Fallon, P; Smith, G [Liverpool Univ. (United Kingdom). Oliver Lodge Lab.

1992-08-01

High sensitivity experiments with {sup 48}Ca, {sup 18}O and {sup 9}Be induced reactions using the ESSA-30, TESSA-3 and NORDBALL arrays have provided extensive new information on the high spin level structures of {sup 174}Hf and {sup 175}Hf. During the series of experiments, several new bands have been found and most known bands have been extended considerably. Spin and excitation energy ranges for {sup 174}Hf are now {approx} 35 {Dirac_h} and {approx} 13 MeV, respectively, and for {sup 175}Hf ranges are {approx} 30 {Dirac_h} and {approx} 7 MeV. respectively. Several new high-K structures have been found in {sup 174}Hf and the structure of these and the already known high-K bands in both nuclei together with the new Tilted Axis Cranking approach might explain the small K-hindrances observed for K-isomers in this region. (author). 8 refs., 2 figs.

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

Directory of Open Access Journals (Sweden)

Sung Heo

2015-07-01

Full Text Available The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS and high-energy resolution REELS (HR-REELS. HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS energy was located at approximately 4.2 eV above the valence band maximum (VBM and the surface band gap width (EgS was approximately 6.3 eV. The bulk F center (FB energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were FS and FB, induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies.

Validity of single term energy expression for ground state rotational band of even-even nuclei

International Nuclear Information System (INIS)

Sharma, S.; Kumar, R.; Gupta, J.B.

2005-01-01

Full text: There are large numbers of empirical studies of gs band of even-even nuclei in various mass regions. The Bohr-Mottelson's energy expression is E(I) = AX + BX 2 +CX 3 +... where X = I(I+1). The anharmonic vibrator energy expression is: E(I) = al + bl 2 + cl 3 SF model with energy expression: E(I)= pX + qI + rXI... where the terms represents the rotational, vibrational and R-V interaction energy, respectively. The validity f the various energy expressions with two terms had been tested by Sharma for light, medium and heavy mass regions using R I s. R 4 plots (where, spin I=6, 8, 10, 12), which are parameter independent. It was also noted, that of the goodness of energy expression can be judged with the minimum input of energies (i.e. only 2 parameters) and predictability's of the model p to high spins. Recently, Gupta et. al proposed a single term energy expression (SSTE) which was applied for rare earth region. This proposed power law reflected the unity of rotation - vibration in a different way and was successful in explaining the structure of gs-band. It will be useful for test the single term energy expression for light and heavy mass region. The single term expression for energy of ground state band can be written as: E I =axI b , where the index b and the coefficient a are the constant for the band. The values of b+1 and a 1 are as follows: b 1 =log(R 1 )/log(I/2) and a 1 =E I /I b ... The following results were gained: 1) The sharp variation in the value of index b at given spin will be an indication of the change in the shape of the nucleus; 2) The value of E I /I b is fairly constant with spin below back-bending, which reflects the stability of shape with spin; 3) This proposed power law is successful in explaining the structure of gs-band of nuclei

Energy bands and gaps near an impurity

Czech Academy of Sciences Publication Activity Database

Mihóková, Eva; Schulman, L. S.

2016-01-01

Roč. 380, č. 41 (2016), s. 3430-3433 ISSN 0375-9601 R&D Projects: GA ČR GA13-09876S Institutional support: RVO:68378271 Keywords : crystal structure * impurity * modeling * energy bands Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.772, year: 2016

Band anticrossing effects in highly mismatched semiconductor alloys

Energy Technology Data Exchange (ETDEWEB)

Wu, Junqiao [Univ. of California, Berkeley, CA (United States)

2002-01-01

The first five chapters of this thesis focus on studies of band anticrossing (BAC) effects in highly electronegativity- mismatched semiconductor alloys. The concept of bandgap bowing has been used to describe the deviation of the alloy bandgap from a linear interpolation. Bowing parameters as large as 2.5 eV (for ZnSTe) and close to zero (for AlGaAs and ZnSSe) have been observed experimentally. Recent advances in thin film deposition techniques have allowed the growth of semiconductor alloys composed of significantly different constituents with ever- improving crystalline quality (e.g., GaAs_1-xN_x and GaP_1-xN_x with x ~< 0.05). These alloys exhibit many novel and interesting properties including, in particular, a giant bandgap bowing (bowing parameters > 14 eV). A band anticrossing model has been developed to explain these properties. The model shows that the predominant bowing mechanism in these systems is driven by the anticrossing interaction between the localized level associated with the minority component and the band states of the host. In this thesis I discuss my studies of the BAC effects in these highly mismatched semiconductors. It will be shown that the results of the physically intuitive BAC model can be derived from the Hamiltonian of the many-impurity Anderson model. The band restructuring caused by the BAC interaction is responsible for a series of experimental observations such as a large bandgap reduction, an enhancement of the electron effective mass, and a decrease in the pressure coefficient of the fundamental gap energy. Results of further experimental investigations of the optical properties of quantum wells based on these materials will be also presented. It will be shown that the BAC interaction occurs not only between localized states and conduction band states at the Brillouin zone center, but also exists over all of k-space. Finally, taking ZnSTe and ZnSeTe as examples, I show that BAC also

Influence of energy bands on the Hall effect in degenerate semiconductors

International Nuclear Information System (INIS)

Wu, Chhi-Chong; Tsai, Jensan

1989-01-01

The influence of energy bands on the Hall effect and transverse magnetoresistance has been investigated according to the scattering processes of carriers in degenerate semiconductors such as InSb. Results show that the Hall angle, Hall coefficient, and transverse magnetoresistance depend on the dc magnetic field for both parabolic and nonparabolic band structures of semiconductors and also depend on the scattering processes of carriers in semiconductors due to the energy-dependent relaxation time. From their numerical analysis for the Hall effect, it is shown that the conduction electrons in degenerate semiconductors play a major role for the carrier transport phenomenon. By comparing with experimental data of the transverse magnetoresistance, it shows that the nonparabolic band model is better in agreement with the experimental work than the parabolic band model of semiconductors

Analyzing shear band formation with high resolution X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Pagan, Darren C.; Obstalecki, Mark; Park, Jun-Sang; Miller, Matthew P.

2018-04-01

Localization of crystallographic slip into shear bands during uniaxial compression of a copper single crystal is studied using very far-field high-energy diffraction microscopy (vff-HEDM). Diffracted intensity was collected in-situ as the crystal deformed using a unique mobile detector stage that provided access to multiple diffraction peaks with high-angular resolution. From the diffraction data, single crystal orientation pole figures (SCPFs) were generated and are used to track the evolution of the distribution of lattice orientation that develops as slip localizes. To aid the identification of 'signatures' of shear band formation and analyze the SCPF data, a model of slip-driven lattice reorientation within shear bands is introduced. Confidence is built in conclusions drawn from the SCPF data about the character of internal slip localization through comparisons with strain fields on the sample surface measured simultaneously using digital image correlation. From the diffraction data, we find that the active slip direction and slip plane are not directly aligned with the orientation of the shear bands that formed. In fact, by extracting the underlying slip system activity from the SCPF data, we show that intersecting shear bands measured on the surface of the sample arise from slip primarily on the same underlying single slip system. These new vff-HEDM results raise significant questions on the use of surface measurements for slip system activity estimation. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Pérez, E.; Dueñas, S.; Castán, H.; García, H.; Bailón, L. [Dept. de Electricidad y Electrónica, Universidad de Valladolid, Paseo de Belén 15, 47011 Valladolid (Spain); Montero, D.; García-Hernansanz, R.; García-Hemme, E.; González-Díaz, G. [Dept. de Física Aplicada III (Electricidad y Electrónica), Univ. Complutense de Madrid, 28040 Madrid (Spain); CEI Campus Moncloa, UCM-UPM, 28040 Madrid (Spain); Olea, J. [CEI Campus Moncloa, UCM-UPM, 28040 Madrid (Spain); Instituto de Energía Solar, E.T.S.I. de Telecomunicación, Univ. Politécnica de Madrid, 28040 Madrid (Spain)

2015-12-28

The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (10{sup 13 }cm{sup -2} and 10{sup 14 }cm{sup -2}) are studied in this work by conductance transient technique and admittance spectroscopy. Conductance transients have been measured at temperatures of around 100 K. The particular shape of these transients is due to the formation of energy barriers in the conduction band, as a consequence of the band-gap narrowing induced by the high titanium concentration. Moreover, stationary admittance spectroscopy results suggest the existence of different energy level configuration, depending on the local titanium concentration. A continuum energy level band is formed when titanium concentration is over the Mott limit. On the other hand, when titanium concentration is lower than the Mott limit, but much higher than the donor impurity density, a quasi-continuum energy level distribution appears. Finally, a single deep center appears for low titanium concentration. At the n-type substrate, the experimental results obtained by means of thermal admittance spectroscopy at high reverse bias reveal the presence of single levels located at around E{sub c}-425 and E{sub c}-275 meV for implantation doses of 10{sup 13 }cm{sup −2} and 10{sup 14 }cm{sup −2}, respectively. At low reverse bias voltage, quasi-continuously distributed energy levels between the minimum of the conduction bands, E{sub c} and E{sub c}-450 meV, are obtained for both doses. Conductance transients detected at low temperatures reveal that the high impurity concentration induces a band gap narrowing which leads to the formation of a barrier in the conduction band. Besides, the relationship between the activation energy and the capture cross section values of all the energy levels fits very well to the Meyer-Neldel rule. As it is known

Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

Science.gov (United States)

Kakushima, K.; Okamoto, K.; Tachi, K.; Song, J.; Sato, S.; Kawanago, T.; Tsutsui, K.; Sugii, N.; Ahmet, P.; Hattori, T.; Iwai, H.

2008-11-01

Band bendings of Si substrates have been observed using hard x-ray photoemission spectroscopy. With a capability of collecting photoelectrons generated as deep as 40 nm, the binding energy shift in a core level caused by the potential profile at the surface of the substrate results in a spectrum broadening. The broadening is found to be significant when heavily doped substrates are used owing to its steep potential profile. The surface potential of the substrate can be obtained by deconvolution of the spectrum. This method has been applied to observe the band bending profile of metal-oxide-semiconductor capacitors with high-k gate dielectrics. By comparing the band bending profiles of heavily-doped n+- and p+-Si substrates, the interface dipoles presented at interfaces can be estimated. In the case of W gated La2O3/La-silicate capacitor, an interface dipole to shift the potential of -0.45 V has been estimated at La-silicate/Si interface, which effectively reduces the apparent work function of W. On the other hand, an interface dipole of 0.03-0.07 V has been found to exist at Hf-silicate/SiO2 interface for W gated HfO2/Hf-silicate/SiO2 capacitor.

Joint density of states of wide-band-gap materials by electron energy loss spectroscopy

International Nuclear Information System (INIS)

Fan, X.D.; Peng, J.L.; Bursill, L.A.

1998-01-01

Kramers-Kronig analysis for parallel electron energy loss spectroscopy (PEELS) data is developed as a software package. When used with a JEOL 4000EX high-resolution transmission electron microscope (HRTEM) operating at 100 keV this allows us to obtain the dielectric function of relatively wide band gap materials with an energy resolution of approx 1.4 eV. The imaginary part of the dielectric function allows the magnitude of the band gap to be determined as well as the joint-density-of-states function. Routines for obtaining three variations of the joint-density of states function, which may be used to predict the optical and dielectric response for angle-resolved or angle-integration scattering geometries are also described. Applications are presented for diamond, aluminum nitride (AlN), quartz (SiO 2 ) and sapphire (Al 2 O 3 ). The results are compared with values of the band gap and density of states results for these materials obtained with other techniques. (authors)

Effect of strong correlations on the high energy anomaly in hole- and electron-doped high-T{sub c} superconductors

Energy Technology Data Exchange (ETDEWEB)

Moritz, B; Johnston, S; Greven, M; Shen, Z-X; Devereaux, T P [Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory and Stanford University, Stanford, CA 94305 (United States); Schmitt, F; Meevasana, W; Motoyama, E M [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305 (United States); Lu, D H [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Kim, C [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Scalettar, R T [Physics Department, University of California-Davis, Davis, CA 95616 (United States)], E-mail: moritzb@slac.stanford.edu

2009-09-15

Recently, angle-resolved photoemission spectroscopy (ARPES) has been used to highlight an anomalously large band renormalization at high binding energies in cuprate superconductors: the high energy 'waterfall' or high energy anomaly (HEA). This paper demonstrates, using a combination of new ARPES measurements and quantum Monte Carlo simulations, that the HEA is not simply the by-product of matrix element effects, but rather represents a cross-over from a quasi-particle band at low binding energies near the Fermi level to valence bands at higher binding energy, assumed to be of strong oxygen character, in both hole- and electron-doped cuprates. While photoemission matrix elements clearly play a role in changing the aesthetic appearance of the band dispersion, i.e. the 'waterfall'-like behavior, they provide an inadequate description for the physics that underlies the strong band renormalization giving rise to the HEA. Model calculations of the single-band Hubbard Hamiltonian showcase the role played by correlations in the formation of the HEA and uncover significant differences in the HEA energy scale for hole- and electron-doped cuprates. In addition, this approach properly captures the transfer of spectral weight accompanying both hole and electron doping in a correlated material and provides a unifying description of the HEA across both sides of the cuprate phase diagram.

Experimental Studies of W-Band Accelerator Structures at High Field

Energy Technology Data Exchange (ETDEWEB)

Hill, Marc E

2001-02-09

A high-gradient electron accelerator is desired for high-energy physics research, where frequency scalings of breakdown and trapping of itinerant beamline particles dictates operation of the accelerator at short wavelengths. The first results of design and test of a high-gradient mm-wave linac with an operating frequency at 91.392 GHz (W-band) are presented. A novel approach to particle acceleration is presented employing a planar, dielectric lined waveguide used for particle acceleration. The traveling wave fields in the planar dielectric accelerator (PDA) are analyzed for an idealized structure, along with a circuit equivalent model used for understanding the structure as a microwave circuit. Along with the W-band accelerator structures, other components designed and tested are high power rf windows, high power attenuators, and a high power squeeze-type phase shifter. The design of the accelerator and its components where eased with the aide of numerical simulations using a finite-difference electromagnetic field solver. Manufacturing considerations of the small, delicate mm-wave components and the steps taken to reach a robust fabrication process are detailed. These devices were characterized under low power using a two-port vector network analyzer to verify tune and match, including measurements of the structures' fields using a bead-pull. The measurements are compared with theory throughout. Addition studies of the W-band structures were performed under high power utilizing a 11.424 GHz electron linac as a current source. Test results include W-band power levels of 200 kW, corresponding to fields in the PDA of over 20 MV/m, a higher gradient than any collider. Planar accelerator devices naturally have an rf quadrupole component of the accelerating field. Presented for the first time are the measurements of this effect.

A Coherent Compton Backscattering High Gain FEL using an X-Band Microwave Undulator

CERN Document Server

Pellegrini, C; Travish, G

2005-01-01

We describe a proposed high-gain FEL using an X-band microwave undulator and operating at a wavelength of about 0.5 μm. The FEL electron beam energy is 65 MeV. The beam is produced by the NLCTA X-band linac at SLAC, using an S-band high-brightness photoinjector. The undulator consists of a circular waveguide with an rf wave counter-propagating with respect to the electron beam. The undulator is powered with two high-power X-band klystrons and a dual-moded pulse compressor recently developed at SLAC. This system is capable of delivering flat-top rf pulses of up to 400 ns and a few hundred megawatts. The equivalent undulator period is 1.4 cm, the radius of the circular pipe is 1 cm, and the undulator parameter is about 0.4 for a helical undulator configuration, obtained using two cross-polarized TE modes, or larger for a planar configuration, using one rf polarization. The undulator is about four meters long. The FEL will reach saturation within this distance when operated in a SASE mode. We describe t...

Quasiparticle band gap of organic-inorganic hybrid perovskites: Crystal structure, spin-orbit coupling, and self-energy effects

Science.gov (United States)

Gao, Weiwei; Gao, Xiang; Abtew, Tesfaye A.; Sun, Yi-Yang; Zhang, Shengbai; Zhang, Peihong

2016-02-01

The quasiparticle band gap is one of the most important materials properties for photovoltaic applications. Often the band gap of a photovoltaic material is determined (and can be controlled) by various factors, complicating predictive materials optimization. An in-depth understanding of how these factors affect the size of the gap will provide valuable guidance for new materials discovery. Here we report a comprehensive investigation on the band gap formation mechanism in organic-inorganic hybrid perovskites by decoupling various contributing factors which ultimately determine their electronic structure and quasiparticle band gap. Major factors, namely, quasiparticle self-energy, spin-orbit coupling, and structural distortions due to the presence of organic molecules, and their influences on the quasiparticle band structure of organic-inorganic hybrid perovskites are illustrated. We find that although methylammonium cations do not contribute directly to the electronic states near band edges, they play an important role in defining the band gap by introducing structural distortions and controlling the overall lattice constants. The spin-orbit coupling effects drastically reduce the electron and hole effective masses in these systems, which is beneficial for high carrier mobilities and small exciton binding energies.

Sub-band gap photo-enhanced secondary electron emission from high-purity single-crystal chemical-vapor-deposited diamond

International Nuclear Information System (INIS)

Yater, J. E.; Shaw, J. L.; Pate, B. B.; Feygelson, T. I.

2016-01-01

Secondary-electron-emission (SEE) current measured from high-purity, single-crystal (100) chemical-vapor-deposited diamond is found to increase when sub-band gap (3.06 eV) photons are incident on the hydrogenated surface. Although the light does not produce photoemission directly, the SEE current increases by more than a factor of 2 before saturating with increasing laser power. In energy distribution curves (EDCs), the emission peak shows a corresponding increase in intensity with increasing laser power. However, the emission-onset energy in the EDCs remains constant, indicating that the bands are pinned at the surface. On the other hand, changes are observed on the high-energy side of the distribution as the laser power increases, with a well-defined shoulder becoming more pronounced. From an analysis of this feature in the EDCs, it is deduced that upward band bending is present in the near-surface region during the SEE measurements and this band bending suppresses the SEE yield. However, sub-band gap photon illumination reduces the band bending and thereby increases the SEE current. Because the bands are pinned at the surface, we conclude that the changes in the band levels occur below the surface in the electron transport region. Sample heating produces similar effects as observed with sub-band gap photon illumination, namely, an increase in SEE current and a reduction in band bending. However, the upward band bending is not fully removed by either increasing laser power or temperature, and a minimum band bending of ∼0.8 eV is established in both cases. The sub-band gap photo-excitation mechanism is under further investigation, although it appears likely at present that defect or gap states play a role in the photo-enhanced SEE process. In the meantime, the study demonstrates the ability of visible light to modify the electronic properties of diamond and enhance the emission capabilities, which may have potential impact for diamond-based vacuum electron

Superdeformed bands in sub 64 sup 147 Gd sub 83 , a possible test of the existence of octupole correlations in superdeformed bands

Energy Technology Data Exchange (ETDEWEB)

Zuber, K.; Balouka, D.; Beck, F.A.; Byrski, T.; Curien, D.; Duchene, G.; Gehringer, C.; Haas, B.; Merdinger, J.C.; Romain, P.; Santos, D.; Styczen, J.; Vivien, J.P.; Dudek, J.; Szymanski, Z.; Werner, T. (Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires)

1990-12-24

Two discrete superdeformed bands (SD) have been identified in the nucleus {sup 147}Gd. The transitions energies of the SD yrast band lie halfway between the {gamma}-ray energies of the yrast SD band in {sup 146}Gd while the transition energies of the excited band lie half way between the transition energies of the yrast SD band in {sup 148}Gd. These two bands are shown to exhibit the presence of the pseudo SU(3) symmetry and also indicate the possible existence of octupole correlations at large elongations and high spins. (orig.).

CZTS stoichiometry effects on the band gap energy

International Nuclear Information System (INIS)

Malerba, Claudia; Biccari, Francesco; Azanza Ricardo, Cristy Leonor; Valentini, Matteo; Chierchia, Rosa; Müller, Melanie; Santoni, Antonino; Esposito, Emilia; Mangiapane, Pietro; Scardi, Paolo; Mittiga, Alberto

2014-01-01

Highlights: • CZTS films with different compositions were grown from stacked-layer precursors. • The band-gap energy varies from 1.48 to 1.63 eV as the [Sn]/[Cu] ratio increases. • The Zn content seems not to be a critical parameter for the optical properties. • PDS data show an increase of the sub-gap absorption as the Sn content is reduced. • Formation of defects at low Sn content was proposed to explain the Eg variation. -- Abstract: The considerable spread of Cu 2 ZnSnS 4 (CZTS) optical properties reported in the literature is discussed in terms of material stoichiometry. To this purpose, kesterite thin films were prepared by sulfurization of multilayered precursors of ZnS, Cu and Sn, changing the relative amounts to obtain CZTS layers with different compositions. X-Ray Diffraction (XRD), Energy Dispersive X-Ray (EDX) spectroscopy, X-Ray Photoelectron Spectroscopy (XPS) and Raman spectroscopy were used for structural and compositional analysis. XRD quantitative phase analysis provides the amount of spurious phases and information on Sn-site occupancy. The optical properties were investigated by spectrophotometric and Photothermal Deflection Spectroscopy (PDS) measurements to assess the absorption coefficient of samples with different compositions. The PDS data show an increase of the sub-band absorption as the Sn content decreases. The results are interpreted assuming the formation of additional defects as the tin content is reduced. Those defects can also be responsible for the decrease of the band gap energy value as the Sn/Cu ratio is decreased

Role of the Band Gap for the Interaction Energy of Coadsorbed Fragments

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; Man, Isabela-Costinela; Soriga, Stefan-Gabriel

2017-01-01

on semiconductors. We propose here a correlation between the cooperative interaction energy, i.e., the energy difference between the adsorption energies of coadsorbed electron donor–acceptor pair and isolated fragments and the band gap of the clean oxide surface. We demonstrate this effect for a number of oxides...... and donor–acceptor pairs and explain it with the shift in the Fermi level before and after the adsorption. The conclusion is that the adsorption of acceptor–donor pairs is considerably more favorable compared to unpaired fragments,and this energy difference is approximately equal to the value of the band...

Band-to-band and inner shell excitation VIS-UV photoluminescence of quaternary InAlGaN alloys

International Nuclear Information System (INIS)

Fukui, K.; Naoe, S.; Okada, K.; Hamada, S.; Hirayama, H.

2006-01-01

Visible and ultraviolet photoluminescence and photoluminescence excitation spectra of quaternary InAlGaN alloys were measured. The excitation photon energy covers from band edge to 180 eV, near both nitrogen K (∝400 eV) and aluminium K (∝1.5 keV) inner shell energy region. From photoluminescence excitation spectra photoluminescence intensity per incident photon number varies in proportion to incident photon energy. This result implies that many conduction band electron - valence band hole pairs which are responsible for photoluminescence are produced by high energy excitation. Time resolved decay curves were also measured in the same energy region. No effect of high energy excitation on time resolved decay measurements suggests a role of indium on the photoluminescence mechanism in InAlGaN system. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Relativistic band-structure calculations for CeTIn sub 5 (T=Ir and Co) and analysis of the energy bands by using tight-binding method

CERN Document Server

Maehira, T; Ueda, K; Hasegawa, A

2003-01-01

In order to investigate electronic properties of recently discovered heavy fermion superconductors CeTIn sub 5 (T=Ir and Co), we employ the relativistic linear augmented-plane-wave (RLAPW) method to clarify the energy band structures and Fermi surfaces of those materials. The obtained energy bands mainly due to the large hybridization between Ce 4 f and In 5 p states well reproduce the Fermi surfaces consistent with the de Haas-van Alphen experimental results. However, when we attempt to understand magnetism and superconductively in CeTIn sub 5 from the microscopic viewpoint, the energy bands obtained in the RLAPW method are too complicated to analyze the system by further including electron correlations. Thus, it is necessary to prepare a more simplified model, keeping correctly the essential characters of the energy bands obtained in the band-structure calculation. For the purpose, we construct a tight-binding model for CeTIn sub 5 by including f-f and p-p hoppings as well as f-p hybridization, which are ex...

Radiation defects in InN irradiated with high-energy electrons

International Nuclear Information System (INIS)

Zhivul'ko, V.D.; Mudryj, A.V.; Yakushev, M.V.; Martin, R.; Shaff, V.; Lu, Kh.; Gurskij, A.L.

2013-01-01

The influence of high energy (6 MeV, fluencies 10 15 – 10 18 cm -2 ) electron irradiation on the fundamental absorption and luminescence properties of InN thin films which were grown on sapphire substrates by molecular bean epitaxial has been studied. It is found that electron irradiation increases the electron concentration and band gap energy E g of InN. The shift of the band gap energy E g is a manifestation of the Burshtein-Mossa effect. (authors)

Energy of the 4(+) isomer and new bands in the odd-odd nucleus 74Br

International Nuclear Information System (INIS)

Doering, J.; Holcomb, J.W.; Johnson, T.D.; Riley, M.A.; Tabor, S.L.; Womble, P.C.; Winter, G.

1993-01-01

High-spin states of the odd-odd nucleus 74 Br were investigated via the reactions 58 Ni ( 19 F,2pn) 74 Br and 65 Cu( 12 C,3n) 74 Br at beam energies of 62 and 50 MeV, respectively. On the basis of coincidence data new levels have been introduced and partly grouped into rotational bands. Some of these new states decay to known levels of negative-parity bands built on both the ground state and the long-lived 4 (+) isomer. Thus, an excitation energy of 13.8 keV has been deduced for the long-lived isomer in 74 Br. The level sequences observed are interpreted in terms of Nilsson configurations in conjunction with collective excitations

Investigation of level energies and B(E2) values for rotation-aligned bands in Hg isotopes

International Nuclear Information System (INIS)

Mertin, D.; Tischler, R.; Kleinrahm, A.; Kroth, R.; Huebel, H.; Guenther, C.

1978-01-01

High spin states in 191 192 193 195 197 199 Hg were investigated by observing γ-rays and conversion electrons in the compound reactions 192 194 198 Pt(α,xn) and 192 Pt ( 3 He,4n). In 197 Hg the decoupled band built on the 13/2 + state and the semi-decoupled negative-parity band are observed up to Isup(π)=41/2 + and 33/2 - , respectively. A careful investigation of 199 Hg revealed no new high spin states above the previously known levels with Isup(π)=25/2 + and 31/2 - . Half-lives were determined for the 10 + , 7 - , 8 - and 16 - states in 192 Hg, the 33/2 states in 191 193 Hg and the 25/2 - states in 191 193 195 197 Hg. The systematics of the level energies and B(E2) values for the positive parity ground and 13/2 + bands and the negative-parity semi-decoupled bands in 190-200 Hg is discussed. (Auth.)

CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections

Energy Technology Data Exchange (ETDEWEB)

Ribeiro, M. [Centro de Pesquisas Avancadas Wernher von Braun, Av. Alice de Castro P.N. Mattosinho 301, CEP 13098-392 Campinas, SP (Brazil); Ferreira, L.G. [Departamento de Fisica dos Materiais e Mecanica, Instituto de Fisica, Universidade de Sao Paulo, 05315-970 Sao Paulo, SP (Brazil); Fonseca, L.R.C. [Center for Semiconductor Components, State University of Campinas, R. Pandia Calogeras 90, 13083-870 Campinas, SP (Brazil); Ramprasad, R. [Department of Chemical, Materials and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, 97 North Eagleville Road, Storrs, CT 06269 (United States)

2012-09-20

We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction scheme to obtain corrected band gaps and band offsets. Our calculations include the spin-orbit effects for the bulk cases, which have shown to be of importance for the equilibrium systems and are possibly degraded in these strained semiconductors. Therefore, the SO showed reduced importance for the band alignment of this particular system. Moreover, the electronic structure calculated along the transition region across the CdSe/CdTe interface shows an interesting non-monotonic variation of the band gap in the range 0.8-1.8 eV, which may enhance the absorption of light for corresponding frequencies at the interface between these two materials in photovoltaic applications.

Fully inkjet printed wide band cantor fractal antenna for RF energy harvesting application

KAUST Repository

Bakytbekov, Azamat

2017-06-07

Energy harvesting from ambient RF signals is feasible, particularly from the GSM bands such as 900MHz, 1800MHz and the 3G band at 2.1GHz. This requires a wideband receive antenna which can cover all these bands with decent gain performance and an omnidirectional radiation pattern. In this work, a novel Cantor fractal antenna has been designed which fulfills the above mentioned performance requirements. Antenna has been realized through a combination of 3D inkjet printing of plastic substrate and 2D inkjet printing of metallic nanoparticles based ink. The stable impedance and radiation performance of the antenna over a bandwidth of 0.8GHz to 2.2GHz (93 %) shows the feasibility of its employment in wide band energy harvesting applications.

A universal high energy anomaly in angle resolved photoemission spectra of high temperature superconductors -- possible evidence of spinon and holon branches

International Nuclear Information System (INIS)

Graf, J.; Gweon, G.-H.; McElroy, K.; Zhou, S.Y.; Jozwiak, C.; Rotenberg, E.; Bill, A.; Sasagawa, T.; Eisaki, H.; Uchida, S.; Takagi, H.; Lee, D.-H.; Lanzara, A.

2006-01-01

A universal high energy anomaly in the single particle spectral function is reported in three different families of high temperature superconductors by using angle-resolved photoemission spectroscopy. As we follow the dispersing peak of the spectral function from the Fermi energy to the valence band complex, we find dispersion anomalies marked by two distinctive high energy scales, E 1 approx 0.38eV and E 2 approx 0.8 eV. E 1 marks the energy above which the dispersion splits into two branches. One is a continuation of the near parabolic dispersion, albeit with reduced spectral weight, and reaches the bottom of the band at the Gamma point at approx 0.5 eV. The other is given by a peak in the momentum space, nearly independent of energy between E 1 and E 2 . Above E 2 , a band-like dispersion re-emerges. We conjecture that these two energies mark the disintegration of the low energy quasiparticles into a spinon and holon branch in the high T c cuprates

Electron correlations in narrow energy bands: modified polar model approach

Directory of Open Access Journals (Sweden)

L. Didukh

2008-09-01

Full Text Available The electron correlations in narrow energy bands are examined within the framework of the modified form of polar model. This model permits to analyze the effect of strong Coulomb correlation, inter-atomic exchange and correlated hopping of electrons and explain some peculiarities of the properties of narrow-band materials, namely the metal-insulator transition with an increase of temperature, nonlinear concentration dependence of Curie temperature and peculiarities of transport properties of electronic subsystem. Using a variant of generalized Hartree-Fock approximation, the single-electron Green's function and quasi-particle energy spectrum of the model are calculated. Metal-insulator transition with the change of temperature is investigated in a system with correlated hopping. Processes of ferromagnetic ordering stabilization in the system with various forms of electronic DOS are studied. The static conductivity and effective spin-dependent masses of current carriers are calculated as a function of electron concentration at various DOS forms. The correlated hopping is shown to cause the electron-hole asymmetry of transport and ferromagnetic properties of narrow band materials.

Exotic superconductivity with enhanced energy scales in materials with three band crossings

Science.gov (United States)

Lin, Yu-Ping; Nandkishore, Rahul M.

2018-04-01

Three band crossings can arise in three-dimensional quantum materials with certain space group symmetries. The low energy Hamiltonian supports spin one fermions and a flat band. We study the pairing problem in this setting. We write down a minimal BCS Hamiltonian and decompose it into spin-orbit coupled irreducible pairing channels. We then solve the resulting gap equations in channels with zero total angular momentum. We find that in the s-wave spin singlet channel (and also in an unusual d-wave `spin quintet' channel), superconductivity is enormously enhanced, with a possibility for the critical temperature to be linear in interaction strength. Meanwhile, in the p-wave spin triplet channel, the superconductivity exhibits features of conventional BCS theory due to the absence of flat band pairing. Three band crossings thus represent an exciting new platform for realizing exotic superconducting states with enhanced energy scales. We also discuss the effects of doping, nonzero temperature, and of retaining additional terms in the k .p expansion of the Hamiltonian.

50 MW C-band pulse klystron; 50MW C band pulse klystron

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

C-band pulse klystron E3746 with an output of 50 MW class was developed jointly with the High-Energy Accelerator Research Organization in the Ministry of Education as the klystron for a linear accelerator. For a large-sized linear accelerator in the next generation, a klystron with higher operating frequency has been required to obtain a compact and efficient accelerator. In E3746, the problem of power resistance during high-frequency operation was solved by mounting a traveling-wave multi-cell output circuit. Moreover, stable operation in the pulse width of 2.5 {mu}s and the output of 54 MW was performed at the same operation efficiency (44%) as the conventional S-band tube by using the frequency (in a C-band frequency band) that is two times as high as the conventional general accelerator. (translated by NEDO)

Touching points in the energy band structure of bilayer graphene superlattices

International Nuclear Information System (INIS)

Pham, C Huy; Nguyen, V Lien

2014-01-01

The energy band structure of the bilayer graphene superlattices with zero-averaged periodic δ-function potentials are studied within the four-band continuum model. Using the transfer matrix method, the study is mainly focused on examining the touching points between adjacent minibands. For the zero-energy touching points the dispersion relation derived shows a Dirac-like double-cone shape with the group velocity which is periodic in the potential strength P with the period of π and becomes anisotropic at relatively large P. From the finite-energy touching points we have identified those located at zero wave-number. It was shown that for these finite-energy touching points the dispersion is direction-dependent in the sense that it is linear or parabolic in the direction parallel or perpendicular to the superlattice direction, respectively. We have also calculated the density of states and the conductivity which demonstrates a manifestation of the touching points examined. (paper)

mBAND analysis for high- and low-LET radiation-induced chromosome aberrations: A review

Energy Technology Data Exchange (ETDEWEB)

Hada, Megumi, E-mail: megumi.hada-1@nasa.gov [NASA Johnson Space Center, Houston, TX 77058 (United States); Universities Space Research Association, Houston, TX 77058 (United States); Wu Honglu; Cucinotta, Francis A. [NASA Johnson Space Center, Houston, TX 77058 (United States)

2011-06-03

During long-term space travel or cancer therapy, humans are exposed to high linear energy transfer (LET) energetic heavy ions. High-LET radiation is much more effective than low-LET radiation in causing various biological effects, including cell inactivation, genetic mutations, cataracts and cancer induction. Most of these biological endpoints are closely related to chromosomal damage, and cytogenetic damage can be utilized as a biomarker for radiation insults. Epidemiological data, mainly from survivors of the atomic bomb detonations in Japan, have enabled risk estimation from low-LET radiation exposures. The identification of a cytogenetic signature that distinguishes high- from low-LET exposure remains a long-term goal in radiobiology. Recently developed fluorescence in situ hybridization (FISH)-painting methodologies have revealed unique endpoints related to radiation quality. Heavy-ions induce a high fraction of complex-type exchanges, and possibly unique chromosome rearrangements. This review will concentrate on recent data obtained with multicolor banding in situ hybridization (mBAND) methods in mammalian cells exposed to low- and high-LET radiations. Chromosome analysis with mBAND technique allows detection of both inter- and intrachromosomal exchanges, and also distribution of the breakpoints of aberrations.

Highly-distorted and doubly-decoupled rotational bands in odd-odd nuclei

International Nuclear Information System (INIS)

McHarris, W.C.; Olivier, W.A.; Rios, A.; Hampton, C.; Chou, Wentsae; Aryaeinejad, R.

1991-01-01

Heavy-ion reactions induce large amounts of angular momentum; hence, they selectively populate rotationally-aligned particle states in compound nuclei. Such states tend to deexcite through similar states connected by large coriolis matrix elements, resulting in relatively few - but highly distorted - bands in the lower-energy portions of odd-odd spectra. The extreme cases of this are doubly-decoupled, K ∼ 1 (π 1/2 x ν 1/2) bands, whose γ transitions are the most intense in spectra from many light Re and Ir nuclei. The authors made a two-pronged assault on such bands, studying them via different HI reactions at different laboratories and using interacting-boson (IBFFA) calculations to aid in sorting them out. The authors are beginning to understand the types of (primarily coriolis) distortions involved and hope to grasp a handle on aspects of the p-n residual interaction, although the coriolis distortions are large enough to mask much of the latter. They also discuss similar but complementary effects in the light Pr region

Satellite bands of the RbCs molecule in the range of highly excited states

Energy Technology Data Exchange (ETDEWEB)

Rakić, Mario; Beuc, Robert; Skenderović, Hrvoje, E-mail: hrvoje@ifs.hr [Institute of Physics, Bijenička cesta 46, Zagreb 10000 (Croatia); Bouloufa-Maafa, Nadia; Dulieu, Olivier; Vexiau, Romain [Laboratoire Aimé Cotton, CNRS, Université Paris-Sud, ENS Cachan, Université Paris-Saclay, Bât. 505, Campus d’Orsay, Orsay Cedex 91405 (France); Pichler, Goran [Physics Department, Kuwait University, PO Box 5969, Safat—13060 (Kuwait)

2016-05-28

We report on the observation of three RbCs satellite bands in the blue and green ranges of the visible spectrum. Absorption measurements are performed using all-sapphire cell filled with a mixture of Rb and Cs. We compare high resolution absorption spectrum of Rb-Cs vapor mixture with pure Rb and Cs vapor spectra from the literature. After detailed analysis, the new satellite bands of RbCs molecule at 418.3 nm, 468.3, and 527.5 nm are identified. The origin of these bands is discussed by direct comparison with difference potentials derived from quantum chemistry calculations of RbCs potential energy curves. These bands originate from the lower Rydberg states of the RbCs molecule. This study thus provides further insight into photoassociation of lower Rydberg molecular states, approximately between Cs(7s) + Rb(5s) and Cs(6s) + Rb(6p) asymptotes, in ultracold gases.

Dipole bands in high spin states of {sub 57}{sup 135}La{sub 78}

Energy Technology Data Exchange (ETDEWEB)

Garg, Ritika; Kumar, S.; Saxena, Mansi; Goyal, Savi; Siwal, Davinder; Verma, S.; Mandal, S. [Department of Physics and Astrophysics, University of Delhi, Delhi - 110007 (India); Palit, R.; Saha, Sudipta; Sethi, J.; Sharma, Sushil K.; Trivedi, T.; Jadav, S. K.; Donthi, R.; Naidu, B. S. [Department of Nuclear and Atomic Physics, Tata Institute of Fundamental Research, Mumbai - 400005 (India)

2014-08-14

High spin states of {sup 135}La have been investigated using the reaction {sup 128}Te({sup 11}B,4n){sup 135}La at a beam energy of 50.5 MeV. Two negative parity dipole bands (ΔI = 1) have been established. Crossover E2 transitions have been observed for the first time in one of the dipole bands. For the Tilted Axis Cranking (TAC) calculations, a three-quasiparticle (3qp) configuration π(h{sub 11/2}){sup 1}⊗ν(h{sub 11/2}){sup −2} and a five-quasiparticle (5qp) configuration π(h{sub 11/2}){sup 1}(g{sub 7/2}/d{sub 5/2}){sup 2}⊗ν(h{sub 11/2}){sup −2} have been taken for the two negative parity dipole bands. The comparison of experimental observables with TAC calculations supports the configuration assignments for both the dipole bands.

Design, realization and test of C-band accelerating structures for the SPARC-LAB linac energy upgrade

International Nuclear Information System (INIS)

Alesini, D.; Bellaveglia, M.; Biagini, M.E.; Boni, R.; Brönnimann, M.; Cardelli, F.; Chimenti, P.; Clementi, R.; Di Pirro, G.; Di Raddo, R.; Ferrario, M.; Ficcadenti, L.; Gallo, A.; Kalt, R.; Lollo, V.; Palumbo, L.; Piersanti, L.; Schilcher, T.

2016-01-01

The energy upgrade of the SPARC-LAB photo-injector at LNF-INFN (Frascati, Italy) has been originally conceived replacing one low gradient (13 MV/m) 3 m long SLAC type S-band traveling wave (TW) section with two 1.4 m long C-band accelerating sections. Due to the higher gradients reached by such structures, a higher energy beam can be obtained within the same accelerator footprint length. The use of C-band structures for electron acceleration has been adopted in a few FEL linacs in the world, among others, the Japanese Free Electron Laser at SPring-8 and the SwissFEL at Paul Scherrer Institute (PSI). The C-band sections are traveling wave, constant impedance structures with symmetric input and output axial couplers. Their design has been optimized for the operation with a SLED RF pulse compressor. In this paper we briefly review their design criteria and we focus on the construction, tuning, low and high-power RF tests. We also illustrate the design and realization of the dedicated low level RF system that has been done in collaboration with PSI in the framework of the EU TIARA project. Preliminary experimental results appear to confirm the operation of such structures with accelerating gradients larger than 35 MV/m.

Design, realization and test of C-band accelerating structures for the SPARC-LAB linac energy upgrade

Energy Technology Data Exchange (ETDEWEB)

Alesini, D.; Bellaveglia, M.; Biagini, M.E.; Boni, R. [INFN Laboratori Nazionali di Frascati, Via Enrico Fermi 40, 00044, Frascati (Italy); Brönnimann, M. [Paul Scherrer Institut, 5232 Villigen (Switzerland); Cardelli, F. [INFN Sezione di Roma, P.le Aldo Moro 2, 00185, Roma (Italy); Università di Roma “La Sapienza”, P.le Aldo Moro 2, 00185, Roma (Italy); Chimenti, P.; Clementi, R.; Di Pirro, G.; Di Raddo, R.; Ferrario, M. [INFN Laboratori Nazionali di Frascati, Via Enrico Fermi 40, 00044, Frascati (Italy); Ficcadenti, L. [INFN Sezione di Roma, P.le Aldo Moro 2, 00185, Roma (Italy); Università di Roma “La Sapienza”, P.le Aldo Moro 2, 00185, Roma (Italy); Gallo, A. [INFN Laboratori Nazionali di Frascati, Via Enrico Fermi 40, 00044, Frascati (Italy); Kalt, R. [Paul Scherrer Institut, 5232 Villigen (Switzerland); Lollo, V. [INFN Laboratori Nazionali di Frascati, Via Enrico Fermi 40, 00044, Frascati (Italy); Palumbo, L. [INFN Sezione di Roma, P.le Aldo Moro 2, 00185, Roma (Italy); Università di Roma “La Sapienza”, P.le Aldo Moro 2, 00185, Roma (Italy); Piersanti, L., E-mail: luca.piersanti@lnf.infn.it [INFN Sezione di Roma, P.le Aldo Moro 2, 00185, Roma (Italy); Università di Roma “La Sapienza”, P.le Aldo Moro 2, 00185, Roma (Italy); Schilcher, T. [Paul Scherrer Institut, 5232 Villigen (Switzerland)

2016-11-21

The energy upgrade of the SPARC-LAB photo-injector at LNF-INFN (Frascati, Italy) has been originally conceived replacing one low gradient (13 MV/m) 3 m long SLAC type S-band traveling wave (TW) section with two 1.4 m long C-band accelerating sections. Due to the higher gradients reached by such structures, a higher energy beam can be obtained within the same accelerator footprint length. The use of C-band structures for electron acceleration has been adopted in a few FEL linacs in the world, among others, the Japanese Free Electron Laser at SPring-8 and the SwissFEL at Paul Scherrer Institute (PSI). The C-band sections are traveling wave, constant impedance structures with symmetric input and output axial couplers. Their design has been optimized for the operation with a SLED RF pulse compressor. In this paper we briefly review their design criteria and we focus on the construction, tuning, low and high-power RF tests. We also illustrate the design and realization of the dedicated low level RF system that has been done in collaboration with PSI in the framework of the EU TIARA project. Preliminary experimental results appear to confirm the operation of such structures with accelerating gradients larger than 35 MV/m.

Band Edge Dynamics and Multiexciton Generation in Narrow Band Gap HgTe Nanocrystals.

Science.gov (United States)

Livache, Clément; Goubet, Nicolas; Martinez, Bertille; Jagtap, Amardeep; Qu, Junling; Ithurria, Sandrine; Silly, Mathieu G; Dubertret, Benoit; Lhuillier, Emmanuel

2018-04-11

Mercury chalcogenide nanocrystals and especially HgTe appear as an interesting platform for the design of low cost mid-infrared (mid-IR) detectors. Nevertheless, their electronic structure and transport properties remain poorly understood, and some critical aspects such as the carrier relaxation dynamics at the band edge have been pushed under the rug. Some of the previous reports on dynamics are setup-limited, and all of them have been obtained using photon energy far above the band edge. These observations raise two main questions: (i) what are the carrier dynamics at the band edge and (ii) should we expect some additional effect (multiexciton generation (MEG)) as such narrow band gap materials are excited far above the band edge? To answer these questions, we developed a high-bandwidth setup that allows us to understand and compare the carrier dynamics resonantly pumped at the band edge in the mid-IR and far above the band edge. We demonstrate that fast (>50 MHz) photoresponse can be obtained even in the mid-IR and that MEG is occurring in HgTe nanocrystal arrays with a threshold around 3 times the band edge energy. Furthermore, the photoresponse can be effectively tuned in magnitude and sign using a phototransistor configuration.

Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Huffaker, Diana [Univ. of California, Los Angeles, CA (United States); Hubbard, Seth [Rochester Inst. of Technology, NY (United States); Norman, Andrew [National Renewable Energy Lab. (NREL), Golden, CO (United States)

2015-07-31

This project aimed to develop solar cells that can help reduce cost per watt. This work focused on developing solar cells that utilize quantum dot (QD) nanomaterials to provide multijunction solar cell efficiency at the cost of single junction solar cell. We focused on a novel concept known as intermediate band solar cells (IBSC) where an additional energy band is inserted in a single solar cell to accommodate sub-bandgap photons absorption which otherwise are lost through transmission. The additional energy band can be achieved by growing QDs within a solar cell p-n junction. Though numerous studies have been conducted to develop such QD systems, very small improvements in solar energy conversion efficiency have been reported. This is mainly due to non-optimal material parameters such as band gap, band offset etc. In this work, we identified and developed a novel QD material system that meets the requirements of IBSC more closely than the current state-of-the-art technology. To achieve these goals, we focused on three important areas of solar cell design: band structure calculations of new materials, efficient device design for high efficiency, and development of new semiconductor materials. In this project, we focused on III-Sb materials as they possess a wide range of energy bandgaps from 0.2 eV to 2eV. Despite the difficulty involved in realizing these materials, we were successfully developed these materials through a systematic approach. Materials studied in this work are AlAsSb (Aluminum Arsenide Antimonide), InAlAs (Indium Aluminum Arsenide) and InAs (Indium Arsenide). InAs was used to develop QD layers within AlAsSb and InAlAs p-n junctions. As the QDs have very small volume, up to 30 QD layers been inserted into the p-n junction to enhance light absorption. These QD multi-stack devices helped in understanding the challenges associated with the development of quantum dot solar cells. The results from this work show that the quantum dot solar cells indeed

S-band and X-band integrated PWT photoelectron linacs

International Nuclear Information System (INIS)

Yu, D.; Newsham, D.; Zeng, J.; Rosenzweig, J.

2001-01-01

A compact high-energy injector, which has been developed by DULY Research Inc., will have wide scientific, industrial, and medical applications. The new photoelectron injector integrates the photocathode directly into a multicell linear accelerator. By focusing the beam with solenoids or permanent magnets, and producing high current with low emittance, high brightness and low energy spread are achieved. In addition to providing a small footprint and improved beam quality in an integrated structure, the compact system considerably simplifies external subsystems required to operate the photoelectron linac, including rf power transport, beam focusing, vacuum and cooling. The photoelectron linac employs an innovative Plane-Wave-Transformer (PWT) design, which provides strong cell-to-cell coupling, relaxes manufacturing tolerances and facilitates the attachment of external ports to the compact structure with minimal field interference. DULY Research Inc. under the support of the DOE Small Business Innovation Research (SBIR) program, has developed, constructed and installed a 20-MeV, S-band compact electron source at UCLA. Cold test results for this device are presented. DULY Research is also actively engaged in the development of an X-band photoelectron linear accelerator in a SBIR project. When completed, the higher frequency structure will be approximately three times smaller. Design considerations for this device are discussed following the S-band cold test results

PASOTRON high-energy microwave source

Science.gov (United States)

Goebel, Dan M.; Schumacher, Robert W.; Butler, Jennifer M.; Hyman, Jay, Jr.; Santoru, Joseph; Watkins, Ron M.; Harvey, Robin J.; Dolezal, Franklin A.; Eisenhart, Robert L.; Schneider, Authur J.

1992-04-01

A unique, high-energy microwave source, called PASOTRON (Plasma-Assisted Slow-wave Oscillator), has been developed. The PASOTRON utilizes a long-pulse E-gun and plasma- filled slow-wave structure (SWS) to produce high-energy pulses from a simple, lightweight device that utilizes no externally produced magnetic fields. Long pulses are obtained from a novel E-gun that employs a low-pressure glow discharge to provide a stable, high current- density electron source. The electron accelerator consists of a high-perveance, multi-aperture array. The E-beam is operated in the ion-focused regime where the plasma filling the SWS space-charge neutralizes the beam, and the self-pinch force compresses the beamlets and increases the beam current density. A scale-model PASOTRON, operating as a backward- wave oscillator in C-band with a 100-kV E-beam, has produced output powers in the 3 to 5 MW range and pulse lengths of over 100 microsecond(s) ec, corresponding to an integrated energy per pulse of up to 500 J. The E-beam to microwave-radiation power conversion efficiency is about 20%.

Improving mental task classification by adding high frequency band information.

Science.gov (United States)

Zhang, Li; He, Wei; He, Chuanhong; Wang, Ping

2010-02-01

Features extracted from delta, theta, alpha, beta and gamma bands spanning low frequency range are commonly used to classify scalp-recorded electroencephalogram (EEG) for designing brain-computer interface (BCI) and higher frequencies are often neglected as noise. In this paper, we implemented an experimental validation to demonstrate that high frequency components could provide helpful information for improving the performance of the mental task based BCI. Electromyography (EMG) and electrooculography (EOG) artifacts were removed by using blind source separation (BSS) techniques. Frequency band powers and asymmetry ratios from the high frequency band (40-100 Hz) together with those from the lower frequency bands were used to represent EEG features. Finally, Fisher discriminant analysis (FDA) combining with Mahalanobis distance were used as the classifier. In this study, four types of classifications were performed using EEG signals recorded from four subjects during five mental tasks. We obtained significantly higher classification accuracy by adding the high frequency band features compared to using the low frequency bands alone, which demonstrated that the information in high frequency components from scalp-recorded EEG is valuable for the mental task based BCI.

Determination of shift in energy of band edges and band gap of ZnSe spherical quantum dot

Science.gov (United States)

Siboh, Dutem; Kalita, Pradip Kumar; Sarma, Jayanta Kumar; Nath, Nayan Mani

2018-04-01

We have determined the quantum confinement induced shifts in energy of band edges and band gap with respect to size of ZnSe spherical quantum dot employing an effective confinement potential model developed in our earlier communication "arXiv:1705.10343". We have also performed phenomenological analysis of our theoretical results in comparison with available experimental data and observe a very good agreement in this regard. Phenomenological success achieved in this regard confirms validity of the confining potential model as well as signifies the capability and applicability of the ansatz for the effective confining potential to have reasonable information in the study of real nano-structured spherical systems.

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet.

Science.gov (United States)

Warren, Joshua A; Riddle, Matthew E; Graziano, Diane J; Das, Sujit; Upadhyayula, Venkata K K; Masanet, Eric; Cresko, Joe

2015-09-01

Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015-2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2-20 billion GJ depending on market adoption dynamics.

Application of energies of optimal frequency bands for fault diagnosis based on modified distance function

Energy Technology Data Exchange (ETDEWEB)

Zamanian, Amir Hosein [Southern Methodist University, Dallas (United States); Ohadi, Abdolreza [Amirkabir University of Technology (Tehran Polytechnic), Tehran (Iran, Islamic Republic of)

2017-06-15

Low-dimensional relevant feature sets are ideal to avoid extra data mining for classification. The current work investigates the feasibility of utilizing energies of vibration signals in optimal frequency bands as features for machine fault diagnosis application. Energies in different frequency bands were derived based on Parseval's theorem. The optimal feature sets were extracted by optimization of the related frequency bands using genetic algorithm and a Modified distance function (MDF). The frequency bands and the number of bands were optimized based on the MDF. The MDF is designed to a) maximize the distance between centers of classes, b) minimize the dispersion of features in each class separately, and c) minimize dimension of extracted feature sets. The experimental signals in two different gearboxes were used to demonstrate the efficiency of the presented technique. The results show the effectiveness of the presented technique in gear fault diagnosis application.

Warm-Up Activities of Middle and High School Band Directors Participating in State-Level Concert Band Assessments

Science.gov (United States)

Ward, Justin P.; Hancock, Carl B.

2016-01-01

The purpose of this study was to examine the warm-ups chosen by concert band directors participating in state-level performance assessments. We observed 29 middle and high school bands and coded the frequency and duration of warm-up activities and behaviors. Results indicated that most bands rehearsed music and played scales, long tones, and…

Energies of rare-earth ion states relative to host bands in optical materials from electron photoemission spectroscopy

Science.gov (United States)

Thiel, Charles Warren

There are a vast number of applications for rare-earth-activated materials and much of today's cutting-edge optical technology and emerging innovations are enabled by their unique properties. In many of these applications, interactions between the rare-earth ion and the host material's electronic states can enhance or inhibit performance and provide mechanisms for manipulating the optical properties. Continued advances in these technologies require knowledge of the relative energies of rare-earth and crystal band states so that properties of available materials may be fully understood and new materials may be logically developed. Conventional and resonant electron photoemission techniques were used to measure 4f electron and valence band binding energies in important optical materials, including YAG, YAlO3, and LiYF4. The photoemission spectra were theoretically modeled and analyzed to accurately determine relative energies. By combining these energies with ultraviolet spectroscopy, binding energies of excited 4fN-15d and 4fN+1 states were determined. While the 4fN ground-state energies vary considerably between different trivalent ions and lie near or below the top of the valence band in optical materials, the lowest 4f N-15d states have similar energies and are near the bottom of the conduction band. As an example for YAG, the Tb3+ 4f N ground state is in the band gap at 0.7 eV above the valence band while the Lu3+ ground state is 4.7 eV below the valence band maximum; however, the lowest 4fN-15d states are 2.2 eV below the conduction band for both ions. We found that a simple model accurately describes the binding energies of the 4fN, 4fN-1 5d, and 4fN+1 states. The model's success across the entire rare-earth series indicates that measurements on two different ions in a host are sufficient to predict the energies of all rare-earth ions in that host. This information provides new insight into electron transfer transitions, luminescence quenching, and valence

Anisotropic energy-gaps of iron-based superconductivity from intra-band quasiparticle interference in LiFeAs

Energy Technology Data Exchange (ETDEWEB)

Rost, A.W. [LASSP, Department of Physics, Cornell, Ithaca, NY 14853 (United States); SUPA, School of Physics and Astronomy, Univ. of St Andrews, St Andrews, Fife KY16 9SS (United Kingdom); Allan, M.P. [LASSP, Department of Physics, Cornell, Ithaca, NY 14853 (United States); SUPA, School of Physics and Astronomy, Univ. of St Andrews, St Andrews, Fife KY16 9SS (United Kingdom); CMPMS Department, Brookhaven National Laboratory, Upton, NY 11973 (United States); Mackenzie, A.P. [SUPA, School of Physics and Astronomy, Univ. of St Andrews, St Andrews, Fife KY16 9SS (United Kingdom); Xie, Y. [CMPMS Department, Brookhaven National Laboratory, Upton, NY 11973 (United States); Davis, J.C. [LASSP, Department of Physics, Cornell, Ithaca, NY 14853 (United States); SUPA, School of Physics and Astronomy, Univ. of St Andrews, St Andrews, Fife KY16 9SS (United Kingdom); CMPMS Department, Brookhaven National Laboratory, Upton, NY 11973 (United States); Kavli Institute at Cornell for Nanoscale Science, Cornell, Ithaca, NY 14853 (United States); Kihou, K.; Lee, C.H.; Iyo, A.; Eisaki, H. [AIST, Tsukuba, Ibaraki 305-8568 (Japan); Chuang, T.M. [LASSP, Department of Physics, Cornell, Ithaca, NY 14853 (United States); CMPMS Department, Brookhaven National Laboratory, Upton, NY 11973 (United States); Inst. of Physics, Academica Sinica, Nankang, Taipei 11529, Taiwan (China)

2012-07-01

Cooper pairing in the Fe-based superconductors is thought to occur due to the projection of the antiferromagnetic interactions between iron atoms onto the complex momentum-space electronic structure. A key consequence is that distinct anisotropic energy gaps {Delta}{sub i}(k) with specific relative orientations should occur on the different electronic bands i. To determine this previously unresolved gap structure high-precision spectroscopy is required. Here we introduce the STM technique of intra-band Bogolyubov quasiparticle scattering interference (QPI) to iron-based superconductor studies, focusing on LiFeAs. We identify the QPI signatures of three hole-like dispersions and, by introducing a new QPI technique, determine the magnitude and relative orientations of corresponding anisotropic {Delta}{sub i}(k). Intra-band Bogolyubov QPI therefore yields the spectroscopic information required to identify the mechanism of superconductivity in Fe-based superconductors.

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

Energy Technology Data Exchange (ETDEWEB)

Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

2016-06-16

Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

Systematic study of β-band and correlation with g- band using power law and soft rotor formula

International Nuclear Information System (INIS)

Katoch, Vikas; Kaushik, Reetu; Sharma, S.; Gupta, J.B.

2014-01-01

The nuclear structure of even Z even N medium mass transitional nuclei consist of ground state band, K π =0 1 β-band, K π =2 1 γ- band and other higher bands. As we move away from closed shell, energy levels are low lying from spherical to deformed nuclei and energy deviated from ideal rotor behavior. The energy of these transitional nuclei in ground band can also be studied using Bohr Mottelson energy expression, Soft Rotor Formula (SRF), Power Law (PL) etc. Recently, Gupta et al. (2013) modified SRF for non zero band head K π =2 1 γ-band and reproduced the level energies. Here same formula applied for K π =0 1 β-band and the level energies are reproduced and compared with experimental energies. The power law is also used for recalculation of level energies and for useful comparison

High macro rubber band ligature

Directory of Open Access Journals (Sweden)

José A. Reis Neto

2013-07-01

Full Text Available Purpose: The goal of a rubber band ligature is to promote fibrosis of the submucosa with subsequent fixation of the anal epithelium to the underlying sphincter. Following this principle, a new technique of ligature was developed based on two aspects: 1. macro banding: to have a better fibrosis and fixation by banding a bigger volume of mucosa and 2. higher ligature: to have this fixation at the origin of the hemorrhoidal cushion displacement. Methods: 1634 patients with internal hemorrhoidal disease grade II or III were treated by the technique called high macro rubber band. There was no distinction as to age, gender or race. To perform this technique a new hemorrhoidal device was specially designed with a larger diameter and a bigger capacity for mucosal volume aspiration. It is recommended to utilize a longer and wider anoscope to obtain a better view of the anal canal, which will facilitate the injection of submucosa higher in the anal canal and the insertion of the rubber band device. The hemorrhoidal cushion must be banded higher in the anal canal (4 cm above the pectinate line. It is preferable to treat all the hemorrhoids in one single session (maximum of three areas banded. Results: The analysis was retrospective without any comparison with conventional banding. The period of evaluation extended from one to twelve years. The analysis of the results showed perianal edema in 1.6% of the patients, immediate tenesmus in 0.8%, intense pain (need for parenteral analgesia in 1.6%, urinary retention in 0.1% of the patients and a symptomatic recurrence rate of 4.2%. All patients with symptomatic recurrence were treated with a new session of macro rubber banding. None of the patients developed anal or rectal sepsis. Small post-ligature bleeding was observed only in 0.8% of the patients. Conclusions: The high macro rubber banding technique represents an alternative method for the treatment of hemorrhoidal disease grades II or III, with good

High Peak Power Test and Evaluation of S-band Waveguide Switches

Science.gov (United States)

Nassiri, A.; Grelick, A.; Kustom, R. L.; White, M.

1997-05-01

The injector and source of particles for the Advanced Photon Source is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five exsisting S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized S-band waveguide switches at a peak operating power of 35 MW. Such rf switches have been successfully operated at other accelerator facilities but at lower peak powers. A test stand has been set up at the Stanford Linear Accelerator Center (SLAC) Klystron Factory to conduct tests comparing the power handling characteristics of two WR-284 and one WR-340 switches. Test results are presented and their implications for the design of the switching system are discussed.

X-ray absorption intensity at high-energy region

International Nuclear Information System (INIS)

Fujikawa, Takashi; Kaneko, Katsumi

2012-01-01

We theoretically discuss X-ray absorption intensity in high-energy region far from the deepest core threshold to explain the morphology-dependent mass attenuation coefficient of some carbon systems, carbon nanotubes (CNTs), highly oriented pyrolytic graphite (HOPG) and fullerenes (C 60 ). The present theoretical approach is based on the many-body X-ray absorption theory including the intrinsic losses (shake-up losses). In the high-energy region the absorption coefficient has correction term dependent on the solid state effects given in terms of the polarization part of the screened Coulomb interaction W p . We also discuss the tail of the valence band X-ray absorption intensity. In the carbon systems C 2s contribution has some influence on the attenuation coefficient even in the high energy region at 20 keV.

Modeling and analysis of renewable energy obligations and technology bandings in the UK electricity market

International Nuclear Information System (INIS)

Gürkan, Gül; Langestraat, Romeo

2014-01-01

In the UK electricity market, generators are obliged to produce part of their electricity with renewable energy resources in accordance with the Renewable Obligation Order. Since 2009 technology banding has been added, meaning that different technologies are rewarded with a different number of certificates. We analyze these two different renewable obligation policies in a mathematical representation of an electricity market with random availabilities of renewable generation outputs and random electricity demand. We also present another, alternative, banding policy. We provide revenue adequate pricing schemes for the three obligation policies. We carry out a simulation study via sampling. A key finding is that the UK banding policy cannot guarantee that the original obligation target is met, hence potentially resulting in more pollution. Our alternative provides a way to make sure that the target is met while supporting less established technologies, but it comes with a significantly higher consumer price. Furthermore, as an undesirable side effect, we observe that a cost reduction in a technology with a high banding (namely offshore wind) leads to more CO 2 emissions under the UK banding policy and to higher consumer prices under the alternative banding policy. - Highlights: • We model and analyze three renewable obligation policies in a mathematical framework. • We provide revenue adequate pricing schemes for the three policies. • We carry out a simulation study via sampling. • The UK policy cannot guarantee that the original obligation target is met. • Cost reductions can lead to more pollution or higher prices under banding policies

Hydrostatic pressure and conduction band non-parabolicity effects on the impurity binding energy in a spherical quantum dot

International Nuclear Information System (INIS)

Sivakami, A.; Mahendran, M.

2010-01-01

The binding energy of a shallow hydrogenic impurity in a spherical quantum dot under hydrostatic pressure with square well potential is calculated using a variational approach within the effective mass approximation. The effect of conduction band non-parabolicity on these energies is also estimated. The binding energy is computed for GaAs spherical quantum dot as a function of dot size, hydrostatic pressure both in the presence and absence of the band non-parabolicity effect. Our results show that (i) the hydrostatic pressure increases the impurity binding energy when dot radius increases for a given pressure, (ii) the hydrostatic pressure with the band non-parabolicity effect effectively increases the binding energy such that the variation is large for smaller dots and (iii) the maximum contribution by the non-parabolicity effect is about 15% for narrow dots. Our results are in good agreement with Perez-Merchancano et al. [J. Phys. Condens. Matter 19 (2007) 026225] who have not considered the conduction band non-parabolicity effect.

Wireless data transmission for high energy physics applications

Science.gov (United States)

Dittmeier, Sebastian; Brenner, Richard; Dancila, Dragos; Dehos, Cedric; De Lurgio, Patrick; Djurcic, Zelimir; Drake, Gary; Gonzalez Gimenez, Jose Luis; Gustafsson, Leif; Kim, Do-Won; Locci, Elizabeth; Pfeiffer, Ullrich; Röhrich, Dieter; Rydberg, Anders; Schöning, André; Siligaris, Alexandre; Soltveit, Hans Kristian; Ullaland, Kjetil; Vincent, Pierre; Rodriguez Vazquez, Pedro; Wiedner, Dirk; Yang, Shiming

2017-08-01

Silicon tracking detectors operated at high luminosity collider experiments pose a challenge for current and future readout systems regarding bandwidth, radiation, space and power constraints. With the latest developments in wireless communications, wireless readout systems might be an attractive alternative to commonly used wired optical and copper based readout architectures. The WADAPT group (Wireless Allowing Data and Power Transmission) has been formed to study the feasibility of wireless data transmission for future tracking detectors. These proceedings cover current developments focused on communication in the 60 GHz band. This frequency band offers a high bandwidth, a small form factor and an already mature technology. Motivation for wireless data transmission for high energy physics application and the developments towards a demonstrator prototype are summarized. Feasibility studies concerning the construction and operation of a wireless transceiver system have been performed. Data transmission tests with a transceiver prototype operating at even higher frequencies in the 240 GHz band are described. Data transmission at rates up to 10 Gb/s have been obtained successfully using binary phase shift keying.

The nuclear spectroscopic telescope array (NuSTAR) high-energy X-ray mission

DEFF Research Database (Denmark)

Harrison, Fiona A.; Craig, William W.; Christensen, Finn Erland

2013-01-01

The Nuclear Spectroscopic Telescope Array (NuSTAR) mission, launched on 2012 June 13, is the first focusing high-energy X-ray telescope in orbit. NuSTAR operates in the band from 3 to 79 keV, extending the sensitivity of focusing far beyond the ~10 keV high-energy cutoff achieved by all previous X...

Intrinsic properties of high-spin band structures in triaxial nuclei

Science.gov (United States)

Jehangir, S.; Bhat, G. H.; Sheikh, J. A.; Palit, R.; Ganai, P. A.

2017-12-01

The band structures of 68,70Ge, 128,130,132,134Ce and 132,134,136,138Nd are investigated using the triaxial projected shell model (TPSM) approach. These nuclei depict forking of the ground-state band into several s-bands and in some cases, both the lowest two observed s-bands depict neutron or proton character. It was discussed in our earlier work that this anomalous behaviour can be explained by considering γ-bands based on two-quasiparticle configurations. As the parent band and the γ-band built on it have the same intrinsic structure, g-factors of the two bands are expected to be similar. In the present work, we have undertaken a detailed investigation of g-factors for the excited band structures of the studied nuclei and the available data for a few high-spin states are shown to be in fair agreement with the predicted values.

High gain harmonic generation free electron lasers enhanced by pseudoenergy bands

Directory of Open Access Journals (Sweden)

Takashi Tanaka

2017-08-01

Full Text Available We propose a new scheme for high gain harmonic generation free electron lasers (HGHG FELs, which is seeded by a pair of intersecting laser beams to interact with an electron beam in a modulator undulator located in a dispersive section. The interference of the laser beams gives rise to a two-dimensional modulation in the energy-time phase space because of a strong correlation between the electron energy and the position in the direction of dispersion. This eventually forms pseudoenergy bands in the electron beam, which result in efficient harmonic generation in HGHG FELs in a similar manner to the well-known scheme using the echo effects. The advantage of the proposed scheme is that the beam quality is less deteriorated than in other existing schemes.

Strategic Energy Management Plan for the Santa Ynez Band of Chumash Indians

Energy Technology Data Exchange (ETDEWEB)

Davenport, Lars [Santa Ynez Band of Chumash Indians, Santa Ynez, CA (United States); Smythe, Louisa [Santa Ynez Band of Chumash Indians, Santa Ynez, CA (United States); Sarquilla, Lindsey [Santa Ynez Band of Chumash Indians, Santa Ynez, CA (United States); Ferguson, Kelly [Santa Ynez Band of Chumash Indians, Santa Ynez, CA (United States)

2015-03-27

This plan outlines the Santa Ynez Band of Chumash Indians’ comprehensive energy management strategy including an assessment of current practices, a commitment to improving energy performance and reducing overall energy use, and recommended actions to achieve these goals. Vision Statement The primary objective of the Strategic Energy Management Plan is to implement energy efficiency, energy security, conservation, education, and renewable energy projects that align with the economic goals and cultural values of the community to improve the health and welfare of the tribe. The intended outcomes of implementing the energy plan include job creation, capacity building, and reduced energy costs for tribal community members, and tribal operations. By encouraging energy independence and local power production the plan will promote self-sufficiency. Mission & Objectives The Strategic Energy Plan will provide information and suggestions to guide tribal decision-making and provide a foundation for effective management of energy resources within the Santa Ynez Band of Chumash Indians (SYBCI) community. The objectives of developing this plan include; Assess current energy demand and costs of all tribal enterprises, offices, and facilities; Provide a baseline assessment of the SYBCI’s energy resources so that future progress can be clearly and consistently measured, and current usage better understood; Project future energy demand; Establish a system for centralized, ongoing tracking and analysis of tribal energy data that is applicable across sectors, facilities, and activities; Develop a unifying vision that is consistent with the tribe’s long-term cultural, social, environmental, and economic goals; Identify and evaluate the potential of opportunities for development of long-term, cost effective energy sources, such as renewable energy, energy efficiency and conservation, and other feasible supply- and demand-side options; and Build the SYBCI’s capacity for

Experimental observation on asymmetric energy flux within the forbidden frequency band in the LC transmission line

International Nuclear Information System (INIS)

Tao Feng; Chen Weizhong; Pan Junting; Xu Wen; Du Sidan

2012-01-01

We study the energy flux in a nonlinear electrical transmission line consisting of two coupled segments which are identical in structure and different in parameters. The asymmetry of energy flux caused by nonlinear wave has been observed experimentally in the forbidden band of the line. The experiment shows whether the energy can flow through the transmission line depends on the amplitude of the boundary driving voltages, which can be well explained in the theoretical framework of nonlinear supratransmission. The numerical simulation based on Kirchhoff’s laws further verifies the existence of the asymmetric energy flux in the forbidden band.

Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from p-Si/ZnO Nanoemitters.

Science.gov (United States)

Huang, Zhizhen; Huang, Yifeng; Xu, Ningsheng; Chen, Jun; She, Juncong; Deng, Shaozhi

2018-06-13

Thermo-enhancement is an effective way to achieve high performance field electron emitters, and enables the individually tuning on the emission current by temperature and the electron energy by voltage. The field emission current from metal or n-doped semiconductor emitter at a relatively lower temperature (i.e., current saturation was observed in the thermo-enhanced field emission measurements. The emission current density showed about ten-time enhancement (from 1.31 to 12.11 mA/cm 2 at 60.6 MV/m) by increasing the temperature from 323 to 623 K. The distinctive performance did not agree with the interband excitation mechanism but well-fit to the band-to-band tunneling model. The strong thermo-enhancement was proposed to be benefit from the increase of band-to-band tunneling probability at the surface portion of the p-Si/ZnO nanojunction. This work provides promising cathode for portable X-ray tubes/panel, ionization vacuum gauges and low energy electron beam lithography, in where electron-dose control at a fixed energy is needed.

Quantitative operando visualization of the energy band depth profile in solar cells.

Science.gov (United States)

Chen, Qi; Mao, Lin; Li, Yaowen; Kong, Tao; Wu, Na; Ma, Changqi; Bai, Sai; Jin, Yizheng; Wu, Dan; Lu, Wei; Wang, Bing; Chen, Liwei

2015-07-13

The energy band alignment in solar cell devices is critically important because it largely governs elementary photovoltaic processes, such as the generation, separation, transport, recombination and collection of charge carriers. Despite the expenditure of considerable effort, the measurement of energy band depth profiles across multiple layers has been extremely challenging, especially for operando devices. Here we present direct visualization of the surface potential depth profile over the cross-sections of operando organic photovoltaic devices using scanning Kelvin probe microscopy. The convolution effect due to finite tip size and cantilever beam crosstalk has previously prohibited quantitative interpretation of scanning Kelvin probe microscopy-measured surface potential depth profiles. We develop a bias voltage-compensation method to address this critical problem and obtain quantitatively accurate measurements of the open-circuit voltage, built-in potential and electrode potential difference.

High Efficiency S-Band 20 Watt Amplifier

Data.gov (United States)

National Aeronautics and Space Administration — This project includes the design and build of a prototype 20 W, high efficiency, S-Band amplifier.   The design will incorporate the latest semiconductor technology,...

Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states, and edge band bending.

Science.gov (United States)

Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung; Li, Lain-Jong; Shih, Chih-Kang

2014-05-14

Using scanning tunneling microscopy and spectroscopy, we probe the electronic structures of single layer MoS2 on graphite. The apparent quasiparticle energy gap of single layer MoS2 is measured to be 2.15 ± 0.06 eV at 77 K, albeit a higher second conduction band threshold at 0.2 eV above the apparent conduction band minimum is also observed. Combining it with photoluminescence studies, we deduce an exciton binding energy of 0.22 ± 0.1 eV (or 0.42 eV if the second threshold is use), a value that is lower than current theoretical predictions. Consistent with theoretical predictions, we directly observe metallic edge states of single layer MoS2. In the bulk region of MoS2, the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS2 heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states.

A New Fractal-Based Miniaturized Dual Band Patch Antenna for RF Energy Harvesting

Directory of Open Access Journals (Sweden)

Sika Shrestha

2014-01-01

Full Text Available The growth of wireless communications in recent years has made it necessary to develop compact, lightweight multiband antennas. Compact antennas can achieve the same performance as large antennas do with low price and with greater system integration. Dual-frequency microstrip antennas for transmission and reception represent promising approach for doubling the system capacity. In this work, a miniaturized dual band antenna operable at 2.45 and 5.8 GHz is constructed by modifying the standard microstrip patch antenna geometry into a fractal structure. In addition to miniaturization and dual band nature, the proposed antenna also removes unwanted harmonics without the use of additional filter component. Using a finite-element-method-based high frequency structure simulator (HFSS, the antenna is designed and its performance in terms of return loss, impedance matching, radiation pattern, and voltage standing wave ratio (VSWR is demonstrated. Simulation results are shown to be in close agreement with performance measurements from an actual antenna fabricated on an FR4 substrate. The proposed antenna can be integrated with a rectifier circuit to develop a compact rectenna that can harvest RF energy in both of these frequency bands at a reduction in size of 25.98% relative to a conventional rectangular patch antenna.

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures

Science.gov (United States)

Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

2017-10-01

The energy band alignment of Ge1-xSnx/Ge1-x-ySixSny heterostructures was investigated, and control of the valence band offset at the Ge1-xSnx/Ge1-x-ySixSny heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-ySixSny layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-ySixSny layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-xSnx layer on a strain-relaxed Ge1-x-ySixSny layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

Comparison and fit of the two and six band k.p models for the band edge structure of Pbsub(1-x)Snsub(x)Te

International Nuclear Information System (INIS)

Weissman, Y.

1975-10-01

The band edge structure of Pbsub(1-x)Snsub(x)Te is derived in detail using a two band ellipsoidal model and compared with a more rigorous calculation based on six bands. A quantitative comparison is made for two values of the energy gap, corresponding to the cases where x=0 and x=0.17. It was found that, for the occupied states in nondegenerate materials, both models are practically equivalent. Discrepancies may occur only in high degeneracies or deep inversion layers. The agreement between both models was significantly improved by introducing an effective energy gap in the two band model. It is suggested that the use of the effective energy gap may improve the agreement between the two band model and experiment whenever the details of the band edge structure enter the interpretation of the experimental results. (author)

Lanthanide 4f-electron binding energies and the nephelauxetic effect in wide band gap compounds

International Nuclear Information System (INIS)

Dorenbos, Pieter

2013-01-01

Employing data from luminescence spectroscopy, the inter 4f-electron Coulomb repulsion energy U(6, A) in Eu 2+/3+ impurities together with the 5d-centroid energy shift ϵ c (1,3+,A) in Ce 3+ impurities in 40 different fluoride, chloride, bromide, iodide, oxide, sulfide, and nitride compounds has been determined. This work demonstrates that the chemical environment A affects the two energies in a similar fashion; a fashion that follows the anion nephelauxetic sequence F, O, Cl, Br, N, I, S, Se. One may then calculate U(6, A) from well established and accurate ϵ c (1,3+,A) values which are then used as input to the chemical shift model proposed in Dorenbos (2012) [19]. As output it provides the chemical shift of 4f-electron binding energy and therewith the 4f-electron binding energy relative to the vacuum energy. In addition this method provides a tool to routinely establish the binding energy of electrons at the top of the valence band (work function) and the bottom of the conduction band (electron affinity) throughout the entire family of inorganic compounds. How the electronic structure of the compound and lanthanide impurities therein change with type of compound and type of lanthanide is demonstrated. -- Highlights: ► A relationship between 5d centroid shift and 4f-electron Coulomb repulsion energy is established. ► Information on the absolute 4f-electron binding energy of lanthanides in 40 compounds is provided. ► A new tool to determine absolute binding energies of electrons in valence and conduction bands is demonstrated

Dipole Bands in 196Hg

International Nuclear Information System (INIS)

Lawrie, J. J.; Lawrie, E. A.; Newman, R. T.; Sharpey-Schafer, J. F.; Smit, F. D.; Msezane, B.; Benatar, M.; Mabala, G. K.; Mutshena, K. P.; Federke, M.; Mullins, S. M.; Ncapayi, N. J.; Vymers, P.

2011-01-01

High spin states in 196 Hg have been populated in the 198 Pt(α,6n) reaction at 65 MeV and the level scheme has been extended. A new dipole band has been observed and a previously observed dipole has been confirmed. Excitation energies, spins and parities of these bands were determined from DCO ratio and linear polarization measurements. Possible quasiparticle excitations responsible for these structures are discussed.

High gradient test of X-band accelerating structure at GLCTA

International Nuclear Information System (INIS)

Watanabe, K.; Higo, T.; Hayano, H.; Terunuma, N.; Saeki, T.; Kudo, N.; Sanuki, T.; Seuhara, T.

2004-01-01

GLCTA (Global Linear Collider Test Accelerator) is the high power test facility for X-band acceleration. We have installed an X-band 60cm structure in April 2004 and have been processing it for more than 3 months. Now it is under test on long-term operation. We report here the installation process and high power test result to date. (author)

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

Directory of Open Access Journals (Sweden)

Yanli Liu

2018-01-01

Full Text Available Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron gas reduces. The theoretical calculation results are verified by the investigation of temperature dependent photoluminescence of AlGaN/GaN heterostructure. This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature.

Alpha band frequency differences between low-trait and high-trait anxious individuals.

Science.gov (United States)

Ward, Richard T; Smith, Shelby L; Kraus, Brian T; Allen, Anna V; Moses, Michael A; Simon-Dack, Stephanie L

2018-01-17

Trait anxiety has been shown to cause significant impairments on attentional tasks. Current research has identified alpha band frequency differences between low-trait and high-trait anxious individuals. Here, we further investigated the underlying alpha band frequency differences between low-trait and high-trait anxious individuals during their resting state and the completion of an inhibition executive functioning task. Using human participants and quantitative electroencephalographic recordings, we measured alpha band frequency in individuals both high and low in trait anxiety during their resting state, and while they completed an Eriksen Flanker Task. Results indicated that high-trait anxious individuals exhibit a desynchronization in alpha band frequency from a resting state to when they complete the Eriksen Flanker Task. This suggests that high-trait anxious individuals maintain fewer attentional resources at rest and must martial resources for task performance as compared with low-trait anxious individuals, who appear to maintain stable cognitive resources between rest and task performance. These findings add to the cognitive neuroscience literature surrounding the role of alpha band frequency in low-trait and high-trait anxious individuals.

Development of wide-band, time and energy resolving, optical photon detectors with application to imaging astronomy

International Nuclear Information System (INIS)

Miller, A.J.; Cabrera, B.; Romani, R.W.; Figueroa-Feliciano, E.; Nam, S.W.; Clarke, R.M.

2000-01-01

Superconducting transition edge sensors (TESs) are showing promise for the wide-band spectroscopy of individual photons from the mid-infrared (IR), through the optical, and into the near ultraviolet (UV). Our TES sensors are ∼20 μm square, 40 nm thick tungsten (W) films with a transition temperature of about 80 mK. We typically attain an energy resolution of 0.15 eV FWHM over the optical range with relative timing resolution of 100 ns. Single photon events with sub-microsecond risetimes and few microsecond falltimes have been achieved allowing count rates in excess of 30 kHz per pixel. Additionally, tungsten is approximately 50% absorptive in the optical (dropping to 10% in the IR) giving these devices an intrinsically high quantum efficiency. These combined traits make our detectors attractive for fast spectrophotometers and photon-starved applications such as wide-band, time and energy resolved astronomical observations. We present recent results from our work toward the fabrication and testing of the first TES optical photon imaging arrays

Metal azides under pressure: An emerging class of high energy ...

Indian Academy of Sciences (India)

Advanced Centre of Research in High Energy Materials (ACRHEM), University of ... behaviour of LiN3 and KN3 by means of density functional calculations. ... and 4.08 eV (KN3) and as pressure increases the band gap decreases and show ...

Collectivity of dipole bands in {sup 196}Pb

Energy Technology Data Exchange (ETDEWEB)

Carpenter, M.P.; Liang, Y.; Janssens, R.V.F. [and others

1995-08-01

The region of nuclei with mass {approximately} 190 was studied extensively over the last few years following the discovery of superdeformation in {sup 190}Hg. More recently, considerable interest in the neutron-deficient Pb isotopes developed with the discover of a number of bands at high spin connected by dipole transitions in both even {sup 192-200}Pb and odd {sup 197-201}Pb nuclei. The majority of the dipole bands are regular in character (i.e. transition energies increase smoothly with spin) while the remaining bands are referred to as irregular in character, due to the fact that the transition energies do not increase smoothly with spin. The properties of the dipole bands were interpreted in terms of high-K, moderately-deformed oblate states built on configurations involving high-J, shape-driving quasiproton excitations coupled to rotation-aligned quasineutrons. It was suggested that the difference between the regular and irregular dipole sequences is related to the deformation where the irregular sequences are thought to be less collective than their regular counterparts.

Broad band energy distribution of UV-bright BL Lac objects

International Nuclear Information System (INIS)

Maraschi, L.; Tanzi, E.G.; Treves, A.

1984-01-01

IUE satellite data in the 1200-2000 and 1900-3200 A intervals of BL Lac objects are analyzed in terms of two discernible groups. A total of 25 BL Lac objects were observed, with differences between groups displayed in terms of the power slope of the energy of the UV emissions, i.e., slopes of 1 and 2. Comparisons of the spectra with those of quasars showed that quasars have a small spectral index in the 1000-6000 A band and no correlation exists between the spectral index and UV flux of the BL Lac objects. The comparisons underscore the lack of a thermal component for BL Lac objects. Steep spectral components in both BL Lac objects and highly polarized quasars emissions could both be due to synchrotron emission. Compton scattering of relativistic electrons off synchrotron photons could produce the X ray emissions. 44 references

Broad band energy distribution of UV-bright BL Lac objects

Energy Technology Data Exchange (ETDEWEB)

Maraschi, L.; Tanzi, E.G.; Treves, A.

1984-01-01

IUE satellite data in the 1200-2000 and 1900-3200 A intervals of BL Lac objects are analyzed in terms of two discernible groups. A total of 25 BL Lac objects were observed, with differences between groups displayed in terms of the power slope of the energy of the UV emissions, i.e., slopes of 1 and 2. Comparisons of the spectra with those of quasars showed that quasars have a small spectral index in the 1000-6000 A band and no correlation exists between the spectral index and UV flux of the BL Lac objects. The comparisons underscore the lack of a thermal component for BL Lac objects. Steep spectral components in both BL Lac objects and highly polarized quasars emissions could both be due to synchrotron emission. Compton scattering of relativistic electrons off synchrotron photons could produce the X ray emissions. 44 references.

Caring Climate, Empathy, and Student Social Behaviors in High School Band

Science.gov (United States)

Lalama, Susana M.

2016-01-01

The purpose of this study was to explore connections among perceived caring climate, empathy, and student social behaviors in high school bands. Nine high school band directors (N = 9 schools), along with their students (N = 203), completed an electronic questionnaire for variables of caring climate, cognitive empathy, affective empathy, social…

S-band 300 W pulsed solid state microwave amplifier development for driving high power klystrons for electron accelerators

International Nuclear Information System (INIS)

Mohania, Praveen; Shrivastava, Purushottam; Hannurkar, P.R.

2005-01-01

S-Band Microwave electron accelerators like microtrons and linear accelerators need pulsed microwaves from few megawatts to tens of megawatts to accelerator the electrons to desired energy and intensity. Klystron tube based driver amplifiers were used to drive the high power klystrons, which need microwave power from few tens of watts to 1 kW depending on tube output power and gain. A endeavour was initiated at Centre for Advanced Technology to develop state of art solid state S-band microwave amplifiers indigenously to drive the klystron tubes. A modular design approach was used and individual modules up to 160 W power levels were developed and tested. Finally combining 160 W modules will give up to 300 W output power. Several more modules can be combined to achieve even high power levels. Present paper describes the developmental efforts of 300 W S-band solid-state amplifiers and related microwave technologies. (author)

Electronic Energy Levels and Band Alignment for Aqueous Phenol and Phenolate from First Principles.

Science.gov (United States)

Opalka, Daniel; Pham, Tuan Anh; Sprik, Michiel; Galli, Giulia

2015-07-30

Electronic energy levels in phenol and phenolate solutions have been computed using density functional theory and many-body perturbation theory. The valence and conduction bands of the solvent and the ionization energies of the solutes have been aligned with respect to the vacuum level based on the concept of a computational standard hydrogen electrode. We have found significant quantitative differences between the generalized-gradient approximation, calculations with the HSE hybrid functional, and many-body perturbation theory in the G0W0 approximation. For phenol, two ionization energies below the photoionization threshold of bulk water have been assigned in the spectrum of Kohn-Sham eigenvalues of the solution. Deprotonation to phenolate was found to lift a third occupied energy level above the valence band maximum of the solvent which is characterized by an electronic lone pair at the hydroxyl group. The second and third ionization energies of phenolate were found to be very similar and explain the intensity pattern observed in recent experiments using liquid-microjet photoemission spectroscopy.

Steady-state emission of blazars at very high energies

International Nuclear Information System (INIS)

Hoehne-Moench, Daniel

2010-01-01

One key scientific program of the MAGIC telescope project is the discovery and detection of blazars. They constitute the most prominent extragalactic source class in the very high energy (VHE) γ-ray regime with 29 out of 34 known objects. Therefore a major part of the available observation time was spent in the last years on high-frequency peaked blazars. The selection criteria were chosen to increase the detection probability. As the X-ray flux is believed to be correlated to the VHE γ-ray flux, only X-ray selected sources with a flux F X >2 μJy at 1 keV were considered. To avoid strong attenuation of the -rays in the extragalactic infrared background, the redshift was restricted to values between z X-γ between the X-ray range at 1 keV and the VHE γ-ray regime at 200 GeV were calculated. The majority of objects show a spectral behaviour as expected from the source class of HBLs: The energy output in the VHE regime is in general lower than in X-rays. For the stacked blazar sample the broad-band spectral index was calculated to α X-γ =1.09, confirming the result found for the individual objects. Another evidence for the revelation of the baseline emission is the broad-band spectral energy distribution (SED) comprising archival as well as contemporaneous multi-wavelength data from the radio to the VHE band. The SEDs of known VHE γ-ray sources in low flux states matches well the SED of the stacked blazar sample. (orig.)

High-power test of S-band klystron for long-pulse operation

International Nuclear Information System (INIS)

Morii, Y.; Oshita, E.; Abe, S.; Keishi, T.; Tomimasu, T.; Ohkubo, Y.; Yoshinao, M.; Yonezawa, H.

1994-01-01

FELI(Free Electron Laser Research Institute, Inc.) is constructing a free electron laser facility covering from 20μm (infra red region) to 0.35μm (ultra violet region), using an S-band linac. The linac is commissioning now. An RF system of the linac for FELs is required of long pulse duration and high stability. S-band klystrons (TOSHIBA E3729) of the FELI linac are operated in three pulse operation modes (pulse width and peak RF power; 24μs-24MW, 12.5μs-34MW, 0.5μs-70MW). The S-band klystron and its modulator were combined to test their performance. The high power test results of the S-band klystron are summarized in this paper. (author)

E- and W-band high-capacity hybrid fiber-wireless link

DEFF Research Database (Denmark)

Vegas Olmos, Juan José; Pang, Xiaodan; Tafur Monroy, Idelfonso

2014-01-01

In this paper we summarize the work conducted in our group in the area of E- and W-band optical high-capacity fiber-wireless links. We present performance evaluations of E- and W-band mm-wave signal generation using photonic frequency upconversion employing both VCSELs and ECLs, along with transm...... in mobile backhaul/fronthaul applications, dense distributed antenna systems and fiber-over-radio scenarios.......In this paper we summarize the work conducted in our group in the area of E- and W-band optical high-capacity fiber-wireless links. We present performance evaluations of E- and W-band mm-wave signal generation using photonic frequency upconversion employing both VCSELs and ECLs, along...... with transmission over different type of optical fibers and for a number of values for the wireless link distance. Hybrid wireless-optical links can be composed of mature and resilient technology available off-the-shelf, and provide functionalities that can add value to optical access networks, specifically...

Sub-band-gap laser micromachining of lithium niobate

DEFF Research Database (Denmark)

Christensen, F. K.; Müllenborn, Matthias

1995-01-01

method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric...

Fractal Based Triple Band High Gain Monopole Antenna

Science.gov (United States)

Pandey, Shashi Kant; Pandey, Ganga Prasad; Sarun, P. M.

2017-10-01

A novel triple-band microstrip fed planar monopole antenna is proposed and investigated. A fractal antenna is created by iterating a narrow pulse (NP) generator model at upper side of modified ground plane, which has a rhombic patch, for enhancing the bandwidth and gain. Three iterations are carried out to study the effects of fractal geometry on the antenna performance. The proposed antenna can operate over three frequency ranges viz, 3.34-4.8 GHz, 5.5-10.6 GHz and 13-14.96 GHz suitable for WLAN 5.2/5.8 GHz, WiMAX 3.5/5.5 GHz and X band applications respectively. Simulated and measured results are in good agreements with each others. Results show that antenna provides wide/ultra wide bandwidths, monopole like radiation patterns and very high antenna gains over the operating frequency bands.

Trifluoromethyl-Substituted Large Band-Gap Polytriphenylamines for Polymer Solar Cells with High Open-Circuit Voltages

Directory of Open Access Journals (Sweden)

Shuwang Yi

2018-01-01

Full Text Available Two large band-gap polymers (PTPACF and PTPA2CF based on polytriphenylamine derivatives with the introduction of electron-withdrawing trifluoromethyl groups were designed and prepared by Suzuki polycondensation reaction. The chemical structures, thermal, optical and electrochemical properties were characterized in detail. From the UV-visible absorption spectra, the PTPACF and PTPA2CF showed the optical band gaps of 2.01 and 2.07 eV, respectively. The cyclic voltammetry (CV measurement displayed the deep highest occupied molecular orbital (HOMO energy levels of −5.33 and −5.38 eV for PTPACF and PTPA2CF, respectively. The hole mobilities, determined by field-effect transistor characterization, were 2.5 × 10−3 and 1.1 × 10−3 cm2 V−1 S−1 for PTPACF and PTPA2CF, respectively. The polymer solar cells (PSCs were tested under the conventional device structure of ITO/PEDOT:PSS/polymer:PC71BM/PFN/Al. All of the PSCs showed the high open circuit voltages (Vocs with the values approaching 1 V. The PTPACF and PTPA2CF based PSCs gave the power conversion efficiencies (PCEs of 3.24% and 2.40%, respectively. Hence, it is a reliable methodology to develop high-performance large band-gap polymer donors with high Vocs through the feasible side-chain modification.

Band Gap Engineering of Titania Systems Purposed for Photocatalytic Activity

Science.gov (United States)

Thurston, Cameron

Ab initio computer aided design drastically increases candidate population for highly specified material discovery and selection. These simulations, carried out through a first-principles computational approach, accurately extrapolate material properties and behavior. Titanium Dioxide (TiO2 ) is one such material that stands to gain a great deal from the use of these simulations. In its anatase form, titania (TiO2 ) has been found to exhibit a band gap nearing 3.2 eV. If titania is to become a viable alternative to other contemporary photoactive materials exhibiting band gaps better suited for the solar spectrum, then the band gap must be subsequently reduced. To lower the energy needed for electronic excitation, both transition metals and non-metals have been extensively researched and are currently viable candidates for the continued reduction of titania's band gap. The introduction of multicomponent atomic doping introduces new energy bands which tend to both reduce the band gap and recombination loss. Ta-N, Nb-N, V-N, Cr-N, Mo-N, and W-N substitutions were studied in titania and subsequent energy and band gap calculations show a favorable band gap reduction in the case of passivated systems.

Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

NARCIS (Netherlands)

Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

2006-01-01

We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

High-efficiency improvement for high energy resolution experimental mode of DIANA spectrometer at materials and life science facility (MLF) of J-PARC

International Nuclear Information System (INIS)

Takahashi, Nobuaki; Shibata, Kaoru; Arai, Masatoshi; Sato, Taku J.

2006-09-01

DIANA is an indirect-geometry time-of-flight (TOF) spectrometer which is planed to install at Materials and Life science Facility (MLF) of Japan Proton Accelerator Research Complex (J-PARC). It has three exchangeable analyzer crystals, such as PG(002), Ge(311) and Si(111) for different energy transfer, momentum transfer and energy-resolution experiments. Normal experimental mode, either PG(002) or Ge(311) analyzer is used, shows moderate energy resolutions of 15μeV or 41λeV, respectively. We are especially aiming very high energy-resolution of 2 μeV by using Si(111) analyzer crystal together with high speed counter-rotating pulse-shaping choppers with each rotation frequency of 300 Hz as an optional setting for the spectrometer. Although such a high energy-resolution is attained, it is considerably inefficient having a very narrow incident energy (E i ) band if the pulse shaping chopper has only one slit. Therefore, we have designed multiple-slit chopper and have performed Monte-Carlo simulation to study Repetition Rate Multiplication (RRM) capability. RRM has been shown to be achievable by using multiple-slit pulse-shaping choppers. By the consideration of the contamination appeared between the neighbor two pulse-shaped bands, the number of slits has been optimized to eight. By using the 8-slit choppers, 23 pulse-shaped neutron energy bands have been available simultaneously within one measurements. Minimum 10 measurements with different phases of the choppers provide the continuous S(Q, ℎω) spectrum of -1.0 meV<ℎω<+3.4 meV. (author)

Energy Band Gap, Intrinsic Carrier Concentration and Fermi Level of CdTe Bulk Crystal between 304 K and 1067 K

Science.gov (United States)

Su, Ching-Hua

2007-01-01

Optical transmission measurements were performed on CdTe bulk single crystal. It was found that when a sliced and polished CdTe wafer was used, a white film started to develop when the sample was heated above 530 K and the sample became opaque. Therefore, a bulk crystal of CdTe was first grown in the window area by physical vapor transport; the optical transmission was then measured and from which the energy band gap was derived between 304 and 1067 K. The band gaps of CdTe can be fit well as a function of temperature using the Varshini expression: Eg (e V) = 1.5860 - 5.9117xl0(exp -4) T(sup 2)/(T + 160). Using the band gap data, the high temperature electron-hole equilibrium was calculated numerically by assuming the Kane's conduction band structure and a heavy-hole parabolic valance band. The calculated intrinsic carrier concentrations agree well with the experimental data reported previously. The calculated intrinsic Fermi levels between 270 and 1200 K were also presented.

A Novel Dual-Band Rectenna for Ambient RF Energy Harvesting at GSM 900 MHz and 1800 MHz

Directory of Open Access Journals (Sweden)

Dinh Khanh Ho

2017-06-01

Full Text Available This paper presents a novel dual-band rectenna for RF energy harvesting system. This rectenna is created from a dual-band antenna and a dual-band rectifier which operates at GSM bands (900 MHz and 1800 MHz. The printed monopole antenna is miniaturized by two meander-lines. The received signal from the receiving antenna is rectified by a voltage double using Schottky diode SMS-7630. The rectifier is optimized for low input power level of -20dBm using harmonic balance. Prototype is designed and fabricated. The simulation is validated by measurement with power conversion efficiency of 20% and 40.8% (in measurement at the input power level of -20dBm. The proposed rectenna has output voltage from 183-415 mV. From the measured results, this rectenna provides the possibility to harvest the ambient electromagnetic energy for powering low-power electronic devices.

The Transient High Energy Sky and Early Universe Surveyor

Science.gov (United States)

O'Brien, P. T.

2016-04-01

The Transient High Energy Sky and Early Universe Surveyor is a mission which will be proposed for the ESA M5 call. THESEUS will address multiple components in the Early Universe ESA Cosmic Vision theme:4.1 Early Universe,4.2 The Universe taking shape, and4.3 The evolving violent Universe.THESEUS aims at vastly increasing the discovery space of the high energy transient phenomena over the entire cosmic history. This is achieved via a unique payload providing an unprecedented combination of: (i) wide and deep sky monitoring in a broad energy band(0.3 keV-20 MeV; (ii) focusing capabilities in the soft X-ray band granting large grasp and high angular resolution; and (iii) on board near-IR capabilities for immediate transient identification and first redshift estimate.The THESEUS payload consists of: (i) the Soft X--ray Imager (SXI), a set of Lobster Eye (0.3--6 keV) telescopes with CCD detectors covering a total FOV of 1 sr; (ii) the X--Gamma-rays spectrometer (XGS), a non-imaging spectrometer (XGS) based on SDD+CsI, covering the same FOV than the Lobster telescope extending the THESEUS energy band up to 20 MeV; and (iii) a 70cm class InfraRed Telescope (IRT) observing up to 2 microns with imaging and moderate spectral capabilities.The main scientific goals of THESEUS are to:(a) Explore the Early Universe (cosmic dawn and reionization era) by unveiling the Gamma--Ray Burst (GRBs) population in the first billion years}, determining when did the first stars form, and investigating the re-ionization epoch, the interstellar medium (ISM) and the intergalactic medium (IGM) at high redshifts.(b) Perform an unprecedented deep survey of the soft X-ray transient Universe in order to fill the present gap in the discovery space of new classes of transient; provide a fundamental step forward in the comprehension of the physics of various classes of Galactic and extra--Galactic transients, and provide real time trigger and accurate locations of transients for follow-up with next

Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations

Science.gov (United States)

Gadret, E. G.; Dias, G. O.; Dacal, L. C. O.; de Lima, M. M., Jr.; Ruffo, C. V. R. S.; Iikawa, F.; Brasil, M. J. S. P.; Chiaramonte, T.; Cotta, M. A.; Tizei, L. H. G.; Ugarte, D.; Cantarero, A.

2010-09-01

We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, respectively, which are in good agreement with the experimental results.

Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering

Directory of Open Access Journals (Sweden)

Ning Cui

2012-06-01

Full Text Available Choosing novel materials and structures is important for enhancing the on-state current in tunnel field-effect transistors (TFETs. In this paper, we reveal that the on-state performance of TFETs is mainly determined by the energy band profile of the channel. According to this interpretation, we present a new concept of energy band profile modulation (BPM achieved with gate structure engineering. It is believed that this approach can be used to suppress the ambipolar effect. Based on this method, a Si TFET device with a symmetrical tri-material-gate (TMG structure is proposed. Two-dimensional numerical simulations demonstrated that the special band profile in this device can boost on-state performance, and it also suppresses the off-state current induced by the ambipolar effect. These unique advantages are maintained over a wide range of gate lengths and supply voltages. The BPM concept can serve as a guideline for improving the performance of nanoscale TFET devices.

Band mapping of surface states vs. adsorbate coverage

International Nuclear Information System (INIS)

Rotenberg, E.; Kevan, S.D.; Denlinger, J.D.; Chung, Jin-Wook

1997-01-01

The theory of electron bands, which arises from basic quantum mechanical principles, has been the cornerstone of solid state physics for over 60 years. Simply put, an energy band is an electron state in a solid whose energy varies with its momentum (similar to, but with a more complicated dependence than, how a free electron's energy is proportional to its momentum squared). Much attention over the last 15 years has been given to the study of band structure of surfaces and interfaces, especially as the applications of these two-dimensional systems have become increasingly important to industry and science. The ultraESCA endstation at beamline 7.01 at the Advanced Light Source was developed for very high-energy - (∼50 meV) and angular - ( 12 photons/sec) makes the detailed study of the evolution of bands possible. The authors are interested in learning how, when one forms a chemical bond between a metal and an overlaying atom or molecule, the resulting charge transfer to or from the adsorbate affects the surface bands. In some cases of interest, intermediate coverages lead to different band structure than at the extremes of clean and saturated surfaces. Surfaces of tungsten are particularly interesting, as their atomic geometry has been shown to be exquisitely sensitive to both the surface vibrational and electronic properties. In this study, the authors looked at the surface bands of tungsten ((110) surface), as a function both of coverage and mass of overlaying atoms. The adsorbed atoms were hydrogen and the alkali atoms lithium and cesium

Composition-tuned band gap energy and refractive index in GaS{sub x}Se{sub 1−x} layered mixed crystals

Energy Technology Data Exchange (ETDEWEB)

Isik, Mehmet, E-mail: mehmet.isik@atilim.edu.tr [Department of Electrical and Electronics Engineering, Atilim University, 06836, Ankara (Turkey); Gasanly, Nizami [Department of Physics, Middle East Technical University, 06800, Ankara (Turkey); Virtual International Scientific Research Centre, Baku State University, 1148, Baku (Azerbaijan)

2017-04-01

Transmission and reflection measurements on GaS{sub x}Se{sub 1−x} mixed crystals (0 ≤ x ≤ 1) were carried out in the 400–1000 nm spectral range. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance and reflectance. The compositional dependence of band gap energy revealed that as sulfur (selenium) composition is increased (decreased) in the mixed crystals, band gap energy increases quadratically from 1.99 eV (GaSe) to 2.55 eV (GaS). Spectral dependencies of refractive indices of the mixed crystals were plotted using the reflectance spectra. It was observed that refractive index decreases nearly in a linear behavior with increasing band gap energy for GaS{sub x}Se{sub 1−x} mixed crystals. Moreover, the composition ratio of the mixed crystals was obtained from the energy dispersive spectroscopy measurements. The atomic compositions of the studied crystals are well-matched with composition x increasing from 0 to 1 by intervals of 0.25. - Highlights: • Transmission and reflection experiments were performed on GaS{sub x}Se{sub 1−x} mixed crystals. • Derivative spectra of transmittance and reflectance were used for analyses. • Compositional dependence of band gap energy and refractive index were reported.

The formation of α-phase SnS nanorods by PVP assisted polyol synthesis: Phase stability, micro structure, thermal stability and defects induced energy band transitions

Energy Technology Data Exchange (ETDEWEB)

Baby, Benjamin Hudson; Mohan, D. Bharathi, E-mail: d.bharathimohan@gmail.com

2017-05-01

We report the formation of single phase of SnS nanostructure through PVP assisted polyol synthesis by varying the source concentration ratio (Sn:S) from 1:1M to 1:12M. The effect of PVP concentration and reaction medium towards the preparation of SnS nanostructure is systematically studied through confocal Raman spectrometer, X-ray diffraction, thermogravimetry analysis, scanning electron microscope, transmission electron microscopy, X-ray photoelectron spectroscopy, UV–Vis–NIR absorption and fluorescence spectrophotometers. The surface morphology of SnS nanostructure changes from nanorods to spherical shape with increasing PVP concentration from 0.15M to 0.5M. Raman analysis corroborates that Raman active modes of different phases of Sn-S are highly active when Raman excitation energy is slightly greater than the energy band gap of the material. The presence of intrinsic defects and large number of grain boundaries resulted in an improved thermal stability of 20 °C during the phase transition of α-SnS. Band gap calculation from tauc plot showed the direct band gap of 1.5 eV which is attributed to the single phase of SnS, could directly meet the requirement of an absorber layer in thin film solar cells. Finally, we proposed an energy band diagram for as synthesized single phase SnS nanostructure based on the experimental results obtained from optical studies showing the energy transitions attributed to band edge transition and also due to the presence of intrinsic defects. - Highlights: • PVP stabilizes the orthorhombic (α) phase of SnS. • Optical band gap of P type SnS tuned by PVP for photovoltaic applications. • The formation of Sn rich SnS phase is investigated through XPS analysis. • Intrinsic defects enhance the thermal stability of α-SnS. • The feasibility of energy transition liable to point defects is discussed.

Performance of high-resolution X-band radar for rainfall measurement in The Netherlands

Directory of Open Access Journals (Sweden)

C. Z. van de Beek

2010-02-01

Full Text Available This study presents an analysis of 195 rainfall events gathered with the X-band weather radar SOLIDAR and a tipping bucket rain gauge network near Delft, The Netherlands, between May 1993 and April 1994. The aim of this paper is to present a thorough analysis of a climatological dataset using a high spatial (120 m and temporal (16 s resolution X-band radar. This makes it a study of the potential for high-resolution rainfall measurements with non-polarimetric X-band radar over flat terrain. An appropriate radar reflectivity – rain rate relation is derived from measurements of raindrop size distributions and compared with radar – rain gauge data. The radar calibration is assessed using a long-term comparison of rain gauge measurements with corresponding radar reflectivities as well as by analyzing the evolution of the stability of ground clutter areas over time. Three different methods for ground clutter correction as well as the effectiveness of forward and backward attenuation correction algorithms have been studied. Five individual rainfall events are discussed in detail to illustrate the strengths and weaknesses of high-resolution X-band radar and the effectiveness of the presented correction methods. X-band radar is found to be able to measure the space-time variation of rainfall at high resolution, far greater than what can be achieved by rain gauge networks or a typical operational C-band weather radar. On the other hand, SOLIDAR can suffer from receiver saturation, wet radome attenuation as well as signal loss along the path. During very strong convective situations the signal can even be lost completely. In combination with several rain gauges for quality control, high resolution X-band radar is considered to be suitable for rainfall monitoring over relatively small (urban catchments. These results offer great prospects for the new high resolution polarimetric doppler X-band radar IDRA.

Fullerenes, PAHs, Amino Acids and High Energy Astrophysics

Directory of Open Access Journals (Sweden)

Susana Iglesias-Groth

2014-12-01

Full Text Available We present theoretical, observational and laboratory work on the spectral properties of fullerenes and hydrogenated fullerenes. Fullerenes in its various forms (individual, endohedral, hydrogenated, etc. can contribute to the UV bump in the extinction curves measured in many lines of sight of the Galaxy. They can also produce a large number of absorption features in the optical and near infrared which could be associated with diffuse interstellar bands. We summarise recent laboratory work on the spectral characterisation of fullerenes and hydrogenated fullerenes (for a range of temperatures. The recent detection of mid-IR bands of fullerenes in various astrophysical environments (planetary nebulae, reflection nebulae provide additional evidence for a link between fullerene families and diffuse interstellar bands. We describe recent observational work on near IR bands of C60+ in a protoplanetary nebula which support fullerene formation during the post-AGB phase. We also report on the survival of fullerenes to irradiation by high energy particles and gamma photons and laboratory work to explore the chemical  reactions that take place when fullerenes are exposed to this radiations in the presence of water, ammonia and other molecules as a potential path to form amino acids.

Triaxial energy relation to describe rotational band in 98-112Ru nuclei

International Nuclear Information System (INIS)

Singh, Yuvraj; Gupta, K.K.; Bihari, Chhail; Varshney, A.K.; Varshney, Mani; Singh, M.; Gupta, D.K.

2010-01-01

In a broader perspective rotation vibration coupling parameter (b) is considered changing with the change in excitation energy (ε 1 ) and is evaluated on fitting experimental energy for 98-112 Ru isotopes in the frame work of general asymmetric rotor model. The moment of inertia parameter (a), common to yrast and quasi-γ band, is calculated from deformation parameter (β) using general empirical relation. The present work is undertaken to suggest some suitable equation for the trajectories which are similar in shape in 98-112 Ru nuclei

Vibrational effects on surface energies and band gaps in hexagonal and cubic ice

International Nuclear Information System (INIS)

Engel, Edgar A.; Needs, Richard J.; Monserrat, Bartomeu

2016-01-01

Surface energies of hexagonal and cubic water ice are calculated using first-principles quantum mechanical methods, including an accurate description of anharmonic nuclear vibrations. We consider two proton-orderings of the hexagonal and cubic ice basal surfaces and three proton-orderings of hexagonal ice prism surfaces, finding that vibrations reduce the surface energies by more than 10%. We compare our vibrational densities of states to recent sum frequency generation absorption measurements and identify surface proton-orderings of experimental ice samples and the origins of characteristic absorption peaks. We also calculate zero point quantum vibrational corrections to the surface electronic band gaps, which range from −1.2 eV for the cubic ice basal surface up to −1.4 eV for the hexagonal ice prism surface. The vibrational corrections to the surface band gaps are up to 12% smaller than for bulk ice.

Augustine Band of Cahuilla Indians Energy Conservation and Options Analysis - Final Report

Energy Technology Data Exchange (ETDEWEB)

Paul Turner

2008-07-11

The Augustine Band of Cahuilla Indians was awarded a grant through the Department of Energy First Steps program in June of 2006. The primary purpose of the grant was to enable the Tribe to develop energy conservation policies and a strategy for alternative energy resource development. All of the work contemplated by the grant agreement has been completed and the Tribe has begun implementing the resource development strategy through the construction of a 1.0 MW grid-connected photovoltaic system designed to offset a portion of the energy demand generated by current and projected land uses on the Tribe’s Reservation. Implementation of proposed energy conservation policies will proceed more deliberately as the Tribe acquires economic development experience sufficient to evaluate more systematically the interrelationships between conservation and its economic development goals.

Search for two-{gamma} sum-energy peaks in the decay out of superdeformed bands

Energy Technology Data Exchange (ETDEWEB)

Blumenthal, D.; Khoo, T.L.; Lauritsen, T. [and others

1995-08-01

The spectrum of {gamma}rays decaying out of the superdeformed (SD) band in {sup 192}Hg has a quasicontinuous distribution. Whereas methods to construct level schemes from discrete lines in coincidence spectra are well established, new techniques must still be developed to extract information from coincidences involving quasicontinuous {gamma}rays. From an experiment using Eurogam, we obtained impressively clean 1- and 2-dimensional {gamma} spectra from pairwise or single gates, respectively, on the transitions of the SD band in {sup 192}Hg. We investigated methods to exploit the 2-dimensional quasicontinuum spectra coincident with the SD band to determine the excitation energy of the SD band above the normal yrast line. No strong peaks were observed in the 2-{gamma} sum spectra; only candidates of peaks at a 2-3 {sigma} level were found. This suggests that 2-{gamma} decay is not the dominant decay branch out of SD bands, consistent with the observed multiplicity of 3.2. We shall next search for peaks in sum-spectra of 3 {gamma}s.

TPCs in high-energy astronomical polarimetry

International Nuclear Information System (INIS)

Black, J K

2007-01-01

High-energy astrophysics has yet to exploit the unique and important information that polarimetry could provide, largely due to the limited sensitivity of previously available polarimeters. In recent years, numerous efforts have been initiated to develop instruments with the sensitivity required for astronomical polarimetry over the 100 eV to 10 GeV band. Time projection chambers (TPCs), with their high-resolution event imaging capability, are an integral part of some of these efforts. After a brief overview of current astronomical polarimeter development efforts, the role of TPCs will be described in more detail. These include TPCs as photoelectric X-ray polarimeters and TPCs as components of polarizationsensitive Compton and pair-production telescopes

Design study of an S-band RF cavity of a dual-energy electron LINAC for the CIS

Science.gov (United States)

Lee, Byeong-No; Park, Hyungdal; Song, Ki-baek; Li, Yonggui; Lee, Byung Cheol; Cha, Sung-su; Lee, Jong-Chul; Shin, Seung-Wook; Chai, Jong-seo

2014-01-01

The design of a resonance frequency (RF) cavity for the dual-energy S-band electron linear accelerator (LINAC) has been carried out for the cargo inspection system (CIS). This Standing-wave-type RF cavity is operated at a frequency under the 2856-MHz resonance frequency and generates electron beams of 9 MeV (high mode) and 6 MeV (low mode). The electrons are accelerated from the initial energy of the electron gun to the target energy (9 or 6 MeV) inside the RF cavity by using the RF power transmitted from a 5.5-MW-class klystron. Then, electron beams with a 1-kW average power (both high mode and low mode) bombard an X-ray target a 2-mm spot size. The proposed accelerating gradient was 13 MV/m, and the designed Q value was about 7100. On going research on 15-MeV non-destructive inspections for military or other applications is presented.

Dual-band and high-efficiency polarization converter based on metasurfaces at microwave frequencies

Science.gov (United States)

Liu, Yajun; Xia, Song; Shi, Hongyu; Zhang, Anxue; Xu, Zhuo

2016-06-01

We present a dual-band and high-efficiency polarization converter in microwave regime. The proposed converter can convert a linearly polarized wave to its cross-polarized wave for two distinct bands: Ku (11.5-20.0 GHz) and Ka (28.8-34.0 GHz). It can also convert the linearly polarized wave to a circularly polarized wave at four other frequencies. The experimental results are in good agreement with simulation results for both frequency bands. The polarization conversion ratio is above 0.94 for the Ku-band and 0.90 for the Ka-band. Furthermore, the converter can achieve dual-band and high-efficiency polarization conversion over angles of incidence up to 45°. The converter is also polarization-selective in that only the x- and y-polarized waves can be converted. The physical mechanism of the dual-band polarization conversion effect is interpreted via decomposed electric field components that couple with different plasmon resonance modes of the structure.

Location of the valence band maximum in the band structure of anisotropic 1 T'-ReSe2

Science.gov (United States)

Eickholt, P.; Noky, J.; Schwier, E. F.; Shimada, K.; Miyamoto, K.; Okuda, T.; Datzer, C.; Drüppel, M.; Krüger, P.; Rohlfing, M.; Donath, M.

2018-04-01

Transition-metal dichalcogenides (TMDCs) are a focus of current research due to their fascinating optical and electronic properties with possible technical applications. ReSe2 is an interesting material of the TMDC family, with unique anisotropic properties originating from its distorted 1 T structure (1 T '). To develop a fundamental understanding of the optical and electric properties, we studied the underlying electronic structure with angle-resolved photoemission (ARPES) as well as band-structure calculations within the density functional theory (DFT)-local density approximation (LDA) and GdW approximations. We identified the Γ ¯M¯1 direction, which is perpendicular to the a axis, as a distinct direction in k space with the smallest bandwidth of the highest valence band. Using photon-energy-dependent ARPES, two valence band maxima are identified within experimental limits of about 50 meV: one at the high-symmetry point Z , and a second one at a non-high-symmetry point in the Brillouin zone. Thus, the position in k space of the global valence band maximum is undecided experimentally. Theoretically, an indirect band gap is predicted on a DFT-LDA level, while quasiparticle corrections lead to a direct band gap at the Z point.

Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

Energy Technology Data Exchange (ETDEWEB)

Pandiyan, Rajesh [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); Oulad Elhmaidi, Zakaria [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); Sekkat, Zouheir [Optics & Photonics Center, Moroccan Foundation for Advanced Science, Innovation and Research, Rabat (Morocco); Abd-lefdil, Mohammed [University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); El Khakani, My Ali, E-mail: elkhakani@emt.inrs.ca [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada)

2017-02-28

Highlights: • High quality CZTS thin films grown by means of PLD technique without resorting to any post sulfurization process. • Effect of thermal annealing treatments (in the 200–500 °C range) on the structural, morphological and optoelectronic properties of PLD-CZTS films. • Experimental determination of key optoelectronic parameters (i.e.; E{sub g}, VBM, ϕ, I{sub p}, and χ) enabling the reconstruction of energy band electronic structure of the PLD-CZTS films. • Investigation on the energy band alignments of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials. - Abstract: We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (T{sub a}), but their crystallinity is much improved for T{sub a} ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with T{sub a} (from ∼14 nm at RT to 70 nm at T{sub a} = 500 °C with a value around 40 nm for T{sub a} = 300–400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV–vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at T{sub a} = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS

A novel approach for characterizing broad-band radio spectral energy distributions

Science.gov (United States)

Harvey, V. M.; Franzen, T.; Morgan, J.; Seymour, N.

2018-05-01

We present a new broad-band radio frequency catalogue across 0.12 GHz ≤ ν ≤ 20 GHz created by combining data from the Murchison Widefield Array Commissioning Survey, the Australia Telescope 20 GHz survey, and the literature. Our catalogue consists of 1285 sources limited by S20 GHz > 40 mJy at 5σ, and contains flux density measurements (or estimates) and uncertainties at 0.074, 0.080, 0.119, 0.150, 0.180, 0.408, 0.843, 1.4, 4.8, 8.6, and 20 GHz. We fit a second-order polynomial in log-log space to the spectral energy distributions of all these sources in order to characterize their broad-band emission. For the 994 sources that are well described by a linear or quadratic model we present a new diagnostic plot arranging sources by the linear and curvature terms. We demonstrate the advantages of such a plot over the traditional radio colour-colour diagram. We also present astrophysical descriptions of the sources found in each segment of this new parameter space and discuss the utility of these plots in the upcoming era of large area, deep, broad-band radio surveys.

The Austin High School Girls' Band of Chicago, Illinois: 1925-1956

Science.gov (United States)

Hash, Phillip M.

2018-01-01

The purpose of this study was to examine the history of the Austin High School (AHS) Girls' Band (AHSGB) of Chicago, Illinois, which existed from 1925 to 1956. This research focused on the band's (a) organization and leadership, (b) activities within the school and community, (c) relationship to the AHS Boys Band, and (d) efforts to challenge and…

Band-edge photoluminescence in CdTe

International Nuclear Information System (INIS)

Horodysky, P.; Grill, R.; Hlidek, P.

2006-01-01

Near band-gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4-500 K). It is demonstrated that the high-temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free-exciton resonance energy on the PL spectra is analytically studied by solving the diffusion-recombination equation. We show that the reabsorption of the radiation by the free-exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room-temperature PL maximum matches neither the free-exciton resonance nor the band-gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Enhanced Water Splitting by Fe2O3-TiO2-FTO Photoanode with Modified Energy Band Structure

Directory of Open Access Journals (Sweden)

Eul Noh

2013-01-01

Full Text Available The effect of TiO2 layer applied to the conventional Fe2O3/FTO photoanode to improve the photoelectrochemical performance was assessed from the viewpoint of the microstructure and energy band structure. Regardless of the location of the TiO2 layer in the photoanodes, that is, Fe2O3/TiO2/FTO or TiO2/Fe2O3/FTO, high performance was obtained when α-Fe2O3 and H-TiNT/anatase-TiO2 phases existed in the constituent Fe2O3 and TiO2 layers after optimized heat treatments. The presence of the Fe2O3 nanoparticles with high uniformity in the each layer of the Fe2O3/TiO2/FTO photoanode achieved by a simple dipping process seemed to positively affect the performance improvement by modifying the energy band structure to a more favorable one for efficient electrons transfer. Our current study suggests that the application of the TiO2 interlayer, together with α-Fe2O3 nanoparticles present in the each constituent layers, could significantly contribute to the performance improvement of the conventional Fe2O3 photoanode.

Efficient full-spectrum utilization, reception and conversion of solar energy by broad-band nanospiral antenna.

Science.gov (United States)

Zhao, Huaqiao; Gao, Huotao; Cao, Ting; Li, Boya

2018-01-22

In this work, the collection of solar energy by a broad-band nanospiral antenna is investigated in order to solve the low efficiency of the solar rectenna based on conventional nanoantennas. The antenna impedance, radiation, polarization and effective area are all considered in the efficiency calculation using the finite integral technique. The wavelength range investigated is 300-3000 nm, which corresponds to more than 98% of the solar radiation energy. It's found that the nanospiral has stronger field enhancement in the gap than a nanodipole counterpart. And a maximum harvesting efficiency about 80% is possible in principle for the nanospiral coupled to a rectifier resistance of 200 Ω, while about 10% for the nanodipole under the same conditions. Moreover, the nanospiral could be coupled to a rectifier diode of high resistance more easily than the nanodipole. These results indicate that the efficient full-spectrum utilization, reception and conversion of solar energy can be achieved by the nanospiral antenna, which is expected to promote the solar rectenna to be a promising technology in the clean, renewable energy application.

Ferroelectric switch for a high-power Ka-band active pulse compressor

Energy Technology Data Exchange (ETDEWEB)

Hirshfield, Jay L. [Omega-P, Inc., New Haven, CT (United States)

2013-12-18

Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

Structure and optical band-gap energies of Ba0.5Sr0.5TiO3 thin films fabricated by RF magnetron plasma sputtering

International Nuclear Information System (INIS)

Xu, Zhimou; Suzuki, Masato; Yokoyama, Shin

2005-01-01

The structure and optical band-gap energies of Ba 0.5 Sr 0.5 TiO 3 (BST0.5) thin films prepared on SiO 2 /Si and fused quartz substrates by RF magnetron plasma sputtering were studied in terms of deposition temperature and film thickness. Highly (100)-oriented BST0.5 thin films were successfully sputtered on a Si substrate with an approximately 1.0-μm-thick SiO 2 layer at a deposition temperature of above 450degC. The optical transmittance of BST0.5 thin films weakly depended on the magnitude of X-ray diffraction (XRD) peak intensity. This is very helpful for monolithic integration of BST0.5 films for electrooptical functions directly onto a SiO 2 /Si substrate. The band-gap energies showed a strong dependence on the deposition temperature and film thickness. It was mainly related to the quantum size effect and the influence of the crystallinity of thin films, such as grain boundaries, grain size, oriented growth, and the existence of an amorphous phase. The band-gap energy values, which were much larger than those of single crystals, decreased with the increase in the deposition temperature and the thickness of BST0.5 thin films. The band-gap energy of 311-nm-thick amorphous BST0.5 thin film was about 4.45 eV and that of (100)-oriented BST0.5 thin film with a thickness of 447 nm was about 3.89 eV. It is believed that the dependence of the band-gap energies of the thin films on the crystallinity for various values of deposition temperature and film thickness means that there could be application in integrated optical devices. (author)

A Minimized MIMO-UWB Antenna with High Isolation and Triple Band-Notched Functions

Science.gov (United States)

Kong, Yuanyuan; Li, Yingsong; Yu, Kai

2016-11-01

A compact high isolation MIMO-UWB antenna with triple frequency rejection bands is proposed for UWB communication applications. The proposed MIMO-UWB antenna consists of two identical UWB antennas and each antenna element has a semicircle ring shaped radiation patch fed by a bend microstrip feeding line for covering the UWB band, which operates from 2.85 GHz to 11.79 GHz with an impedance bandwidth of 122.1 %. By etching a L-shaped slot on the ground plane, and embedding an "anchor" shaped stub into the patch and integrating an open ring under the semicircle shaped radiation patch, three notch bands are realized to suppress WiMAX (3.3-3.6 GHz), WLAN(5.725-5.825 GHz) and uplink of X-band satellite (7.9-8.4 GHz) signals. The high isolation with S21<-20 dB in most UWB band is obtained by adding a protruded decoupling structure. The design procedure of the MIMO-UWB antenna is given in detail. The proposed MIMO-UWB antenna is simulated, fabricated and measured. Experimental results demonstrate that the proposed MIMO-UWB antenna has a stable gain, good impedance match, high isolation, low envelope correlation coefficient and good radiation pattern at the UWB operating band and it can provide three designated notch bands.

Changes in the surface electronic states of semiconductor fine particles induced by high energy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Yamaki, Tetsuya; Asai, Keisuke; Ishigure, Kenkichi [Tokyo Univ. (Japan); Shibata, Hiromi

1997-03-01

The changes in the surface electronic states of Q-sized semiconductor particles in Langmuir-Blodgett (LB) films, induced by high energy ion irradiation, were examined by observation of ion induced emission and photoluminescence (PL). Various emission bands attributed to different defect sites in the band gap were observed at the initial irradiation stage. As the dose increased, the emissions via the trapping sites decreased in intensity while the band-edge emission developed. This suggests that the ion irradiation would remove almost all the trapping sites in the band gap. The low energy emissions, which show a multiexponential decay, were due to a donor-acceptor recombination between the deeply trapped carriers. It was found that the processes of formation, reaction, and stabilization of the trapping sites would predominantly occur under the photooxidizing conditions. (author)

High-power picosecond pulse delivery through hollow core photonic band gap fibers

DEFF Research Database (Denmark)

Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian

2015-01-01

We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers......We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers...

A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells

International Nuclear Information System (INIS)

Park, Se Jin; Moon, Sung Hwan; Min, Byoung Koun; Cho, Yunae; Kim, Ji Eun; Kim, Dong-Wook; Lee, Doh-Kwon; Gwak, Jihye; Kim, Jihyun

2014-01-01

Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor solution-based coating method with a multi-step heat-treatment process (oxidation, sulfurization, and selenization). The high-band-gap (1.57 eV) Cu(In x Ga 1−x )S 2 (CIGS) solar cell showed a high open-circuit voltage of 787 mV, whereas the low-band-gap (1.12 eV) Cu(In x Ga 1−x )(S 1−y Se y ) 2 (CIGSSe) cell exhibited a high short-circuit current density of 32.6 mA cm −2 . The energy conversion efficiencies were 8.28% for CIGS and 8.81% for CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples showed notable differences in grain size, surface morphology, and interfacial properties. Low-temperature transport and admittance characteristics of the samples clearly revealed how their structural differences influenced their photovoltaic and electrical properties. Such analyses provide insight into the enhanced solar cell performance of the solution-processed chalcopyrite thin films. (paper)

Band gap and band offset of (GaIn)(PSb) lattice matched to InP

Science.gov (United States)

Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

2005-07-01

Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

Development of L-band niobium superconducting RF cavities with high accelerating field

International Nuclear Information System (INIS)

Saito, Kenji; Noguchi, Shuichi; Ono, Masaaki; Kako, Eiji; Shishido, Toshio; Matsuoka, Masanori; Suzuki, Takafusa; Higuchi, Tamawo.

1994-01-01

Superconducting RF cavity is a candidate for the TeV energy e + /e - linear collider of next generation if the accelerating field is improved to 25-30 MV/m and much cost down is achieved in cavity fabrication. Since 1990, KEK has continued R and D of L-band niobium superconducting cavities focusing on the high field issue. A serious problem like Q-degradation due to vacuum discharge came out on the way, however, it has been overcome and presently all of cavities which were annealed at 1400degC achieved the accelerating field of >25 MV/m with enough Qo value. Recent results on single cell cavities are described in this paper. (author)

Optical band gap energy and ur bach tail of CdS:Pb2+ thin films

Energy Technology Data Exchange (ETDEWEB)

Chavez, M.; Juarez, H.; Pacio, M. [Universidad Autonoma de Puebla, Instituto de Ciencias, Centro de Investigacion en Dispositivos Semiconductores, Av. 14 Sur, Col. Jardines de San Manuel, Ciudad Universitaria, Puebla, Pue. (Mexico); Gutierrez, R.; Chaltel, L.; Zamora, M.; Portillo, O. [Universidad Autonoma de Puebla, Facultad de Ciencias Quimicas, Laboratorio de Materiales, Apdo. Postal 1067, 72001 Puebla, Pue. (Mexico); Mathew, X., E-mail: osporti@yahoo.mx [UNAM, Instituto de Energias Renovables, Temixco, Morelos (Mexico)

2016-11-01

Pb S-doped CdS nano materials were successfully synthesized using chemical bath. Transmittance measurements were used to estimate the optical band gap energy. Tailing in the band gap was observed and found to obey Ur bach rule. The diffraction X-ray show that the size of crystallites is in the ∼33 nm to 12 nm range. The peaks belonging to primary phase are identified at 2θ = 26.5 degrees Celsius and 2θ = 26.00 degrees Celsius corresponding to CdS and Pb S respectively. Thus, a shift in maximum intensity peak from 2θ = 26.4 to 28.2 degrees Celsius is clear indication of possible transformation of cubic to hexagonal phase. Also peaks at 2θ = 13.57, 15.9 degrees Celsius correspond to lead perchlorate thiourea. The effects on films thickness and substrate doping on the band gap energy and the width on tail were investigated. Increasing doping give rise to a shift in optical absorption edge ∼0.4 eV. (Author)

Infrared radiation parameterizations for the minor CO2 bands and for several CFC bands in the window region

Science.gov (United States)

Kratz, David P.; Chou, Ming-Dah; Yan, Michael M.-H.

1993-01-01

Fast and accurate parameterizations have been developed for the transmission functions of the CO2 9.4- and 10.4-micron bands, as well as the CFC-11, CFC-12, and CFC-22 bands located in the 8-12-micron region. The parameterizations are based on line-by-line calculations of transmission functions for the CO2 bands and on high spectral resolution laboratory measurements of the absorption coefficients for the CFC bands. Also developed are the parameterizations for the H2O transmission functions for the corresponding spectral bands. Compared to the high-resolution calculations, fluxes at the tropopause computed with the parameterizations are accurate to within 10 percent when overlapping of gas absorptions within a band is taken into account. For individual gas absorption, the accuracy is of order 0-2 percent. The climatic effects of these trace gases have been studied using a zonally averaged multilayer energy balance model, which includes seasonal cycles and a simplified deep ocean. With the trace gas abundances taken to follow the Intergovernmental Panel on Climate Change Low Emissions 'B' scenario, the transient response of the surface temperature is simulated for the period 1900-2060.

Effect of Γ-X band mixing on the donor binding energy in a Quantum Wire

Science.gov (United States)

Vijaya Shanthi, R.; Jayakumar, K.; Nithiananthi, P.

2015-02-01

To invoke the technological applications of heterostructure semiconductors like Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD), it is important to understand the property of impurity energy which is responsible for the peculiar electronic & optical behavior of the Low Dimensional Semiconductor Systems (LDSS). Application of hydrostatic pressure P>35kbar drastically alters the band offsets leading to the crossover of Γ band of the well & X band of the barrier resulting in an indirect transition of the carrier and this effect has been studied experimentally and theoretically in a QW structure. In this paper, we have investigated the effect of Γ-X band mixing due to the application of hydrostatic pressure in a GaAs/AlxGa1-xAs QWW system. The results are presented and discussed for various widths of the wire.

Strain hardening by dynamic slip band refinement in a high-Mn lightweight steel

International Nuclear Information System (INIS)

Welsch, E.; Ponge, D.; Hafez Haghighat, S.M.; Sandlöbes, S.; Choi, P.; Herbig, M.; Zaefferer, S.; Raabe, D.

2016-01-01

The strain hardening mechanism of a high-Mn lightweight steel (Fe-30.4Mn-8Al-1.2C (wt%)) is investigated by electron channeling contrast imaging (ECCI) and transmission electron microscopy (TEM). The alloy is characterized by a constant high strain hardening rate accompanied by high strength and high ductility (ultimate tensile strength: 900 MPa, elongation to fracture: 68%). Deformation microstructures at different strain levels are studied in order to reveal and quantify the governing structural parameters at micro- and nanometer scales. As the material deforms mainly by planar dislocation slip causing the formation of slip bands, we quantitatively study the evolution of the slip band spacing during straining. The flow stress is calculated from the slip band spacing on the basis of the passing stress. The good agreement between the calculated values and the tensile test data shows dynamic slip band refinement as the main strain hardening mechanism, enabling the excellent mechanical properties. This novel strain hardening mechanism is based on the passing stress acting between co-planar slip bands in contrast to earlier attempts to explain the strain hardening in high-Mn lightweight steels that are based on grain subdivision by microbands. We discuss in detail the formation of the finely distributed slip bands and the gradual reduction of the spacing between them, leading to constantly high strain hardening. TEM investigations of the precipitation state in the as-quenched state show finely dispersed atomically ordered clusters (size < 2 nm). The influence of these zones on planar slip is discussed.

High-Energy Neutrino Interactions

CERN Multimedia

2002-01-01

This experiment studies neutrino interactions in iron at the highest available energies using the narrow-band neutrino beam N3 and the wide-band neutrino beam N1. The basis of the detector is a massive target-calorimeter in which the energy deposited by a neutrino (or antineutrino) is measured by electronic techniques and the momentum of outgoing muons is determined by magnetic deflection. The detector is constructed in the form of a 20 m long iron-cored toroidal magnet, composed of modules of length 70~cm and 90~cm, and of 3.75~m diameter. Drift chambers placed in between each module measure the trajectory of muons from the neutrino interactions. The modules are of three types. The first ten modules are constructed of 2.5~cm iron plates with 20~scintillator planes inserted between the plates. The next five modules are constructed of 5~cm plates with 15~planes of scintillator and the last six modules are constructed of 15~cm plates with 5~planes of scintillators. The total mass of the detector is @=~1400 tons...

Band head spin assignment of superdeformed bands in 133Pr using two-parameter formulae

Science.gov (United States)

Sharma, Honey; Mittal, H. M.

2018-03-01

The two-parameter formulae viz. the power index formula, the nuclear softness formula and the VMI model are adopted to accredit the band head spin (I0) of four superdeformed rotational bands in 133Pr. The technique of least square fitting is used to accredit the band head spin for four superdeformed rotational bands in 133Pr. The root mean deviation among the computed transition energies and well-known experimental transition energies are attained by extracting the model parameters from the two-parameter formulae. The determined transition energies are in excellent agreement with the experimental transition energies, whenever exact spins are accredited. The power index formula coincides well with the experimental data and provides minimum root mean deviation. So, the power index formula is more efficient tool than the nuclear softness formula and the VMI model. The deviation of dynamic moment of inertia J(2) against the rotational frequency is also examined.

Band engineering and rational design of high-performance thermoelectric materials by first-principles

Directory of Open Access Journals (Sweden)

Lili Xi

2016-06-01

Full Text Available Understanding and manipulation of the band structure are important in designing high-performance thermoelectric (TE materials. Our recent work has involved the utilization of band structure in various topics of TE research, i.e., the band convergence, the conductive network, dimensionality reduction by quantum effects, and high throughput material screening. In non-cubic chalcopyrite compounds, we revealed the relations between structural factors and band degeneracy, and a simple unity-η rule was proposed for selecting high performance diamond-like TE materials. Based on the deep understanding of the electrical and thermal transport, we identified the conductive network in filled skutterudites with the “phonon glass-electron crystal” (PGEC paradigm, and extended this concept to caged-free Cu-based diamond-like compounds. By combining the band structure calculations and the Boltzmann transport theory, we conducted a high-throughput material screening in half-Heusler (HH systems, and several promising compositions with high power factors were proposed out of a large composition collection. At last, we introduced the Rashba spin-splitting effect into thermoelectrics, and its influence on the electrical transport properties was discussed. This review demonstrated the importance of the microscopic perspectives for the optimization and design of novel TE materials.

New high spin states and band termination in 83Y and 84Zr

International Nuclear Information System (INIS)

Johnson, T.D.; Aprahamian, A.; Lister, C.J.; Blumenthal, D.J.; Crowell, B.; Chowdhury, P.; Fallon, P.; Machiavelli, A.O.

1997-01-01

The gamma decay of high spin yrast states in 83 Y up to I π =59/2 + and 53/2 - have been observed using the reaction 58 Ni( 29 Si,3p) at 110 MeV and the Gammasphere Early Implementation Array. The level scheme has been substantially extended due to the observations of several new transitions in all of the bands. A sequence of transitions feeding into the positive parity yrast band above I π =47/2 + seems to be consistent with a noncollective oblate structure expected at these high spins. A similar cascade is found in the data for 84 Zr. A new forking of the favored negative parity band is found which may be due to neutron alignment polarizing the core to a different shape. This suggests that the open-quotes isomeric close-quote close-quote band in 83 Y, for which one more connecting transition was found, is of a similar nature to other high-K bands found in this region. Lifetime measurements in the unfavored negative parity band are consistent with cranking calculations which predict a nearly oblate shape with a deformation parameter β 2 ∼0.2. A qualitative analysis of line shapes at very high spins suggests the persistence of collectivity in the yrast sequence to the highest excitations seen. copyright 1997 The American Physical Society

A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In-doped ZnO

Science.gov (United States)

Saniz, R.; Xu, Y.; Matsubara, M.; Amini, M. N.; Dixit, H.; Lamoen, D.; Partoens, B.

2013-01-01

The calculation of defect levels in semiconductors within a density functional theory approach suffers greatly from the band gap problem. We propose a band gap correction scheme that is based on the separation of energy differences in electron addition and relaxation energies. We show that it can predict defect levels with a reasonable accuracy, particularly in the case of defects with conduction band character, and yet is simple and computationally economical. We apply this method to ZnO doped with group III elements (Al, Ga, In). As expected from experiment, the results indicate that Zn substitutional doping is preferred over interstitial doping in Al, Ga, and In-doped ZnO, under both zinc-rich and oxygen-rich conditions. Further, all three dopants act as shallow donors, with the +1 charge state having the most advantageous formation energy. Also, doping effects on the electronic structure of ZnO are sufficiently mild so as to affect little the fundamental band gap and lowest conduction bands dispersion, which secures their n-type transparent conducting behavior. A comparison with the extrapolation method based on LDA+U calculations and with the Heyd-Scuseria-Ernzerhof hybrid functional (HSE) shows the reliability of the proposed scheme in predicting the thermodynamic transition levels in shallow donor systems.

Electronic structure of the Ga1-xCr xN studied by high-energy photoemission spectroscopy

International Nuclear Information System (INIS)

Kim, J.J.; Makino, H.; Yao, T.; Takata, Y.; Kobayashi, K.; Yamamoto, T.; Hanada, T.; Cho, M.W.; Ikenaga, E.; Yabashi, M.; Miwa, D.; Nishino, Y.; Tamasaku, K.; Ishikawa, T.; Shin, S.

2005-01-01

Valence band spectra of Ga 1-x Cr x N have been investigated by high-energy photoemission spectroscopy at the photon energy of 5.95 keV. Cr doping does introduce a novel electronic structure in the bandgap and causes some change in valence band structure. Based on the first-principle calculation, Cr-associated electronic levels in the bandgap are assigned to nonbonding and antibonding d states while the change of the valence band suggests that the Ga 4s originated states are significantly modified through hybridization with the Cr 3d orbital. The present result evidences that the Ga valence electrons are considerably modified through the interaction with the second nearest-neighbour Cr atoms

NLTE ANALYSIS OF HIGH-RESOLUTION H -BAND SPECTRA. II. NEUTRAL MAGNESIUM

Energy Technology Data Exchange (ETDEWEB)

Zhang, Junbo; Shi, Jianrong; Liu, Chao [Key Laboratory of Optical Astronomy, National Astronomical Observatories, Chinese Academy of Sciences, A20 Datun Road, Chaoyang District, Beijing 100012 (China); Pan, Kaike [Apache Point Observatory and New Mexico State University, P.O. Box 59, Sunspot, NM 88349-0059 (United States); Prieto, Carlos Allende, E-mail: sjr@bao.ac.cn [Instituto de Astrofísica de Canarias, E-38205 La Laguna, Tenerife (Spain)

2017-01-20

Aiming at testing the validity of our magnesium atomic model and investigating the effects of non-local thermodynamical equilibrium (NLTE) on the formation of the H -band neutral magnesium lines, we derive the differential Mg abundances from selected transitions for 13 stars either adopting or relaxing the assumption of local thermodynamical equilibrium (LTE). Our analysis is based on high-resolution and high signal-to-noise ratio H -band spectra from the Apache Point Observatory Galactic Evolution Experiment (APOGEE) and optical spectra from several instruments. The absolute differences between the Mg abundances derived from the two wavelength bands are always less than 0.1 dex in the NLTE analysis, while they are slightly larger for the LTE case. This suggests that our Mg atomic model is appropriate for investigating the NLTE formation of the H -band Mg lines. The NLTE corrections for the Mg i H -band lines are sensitive to the surface gravity, becoming larger for smaller log g values, and strong lines are more susceptible to departures from LTE. For cool giants, NLTE corrections tend to be negative, and for the strong line at 15765 Å they reach −0.14 dex in our sample, and up to −0.22 dex for other APOGEE stars. Our results suggest that it is important to include NLTE corrections in determining Mg abundances from the H -band Mg i transitions, especially when strong lines are used.

A high-energy Compton polarimeter for the POET SMEX mission

Science.gov (United States)

Bloser, Peter F.; McConnell, Mark L.; Legere, Jason S.; Ertley, Camden D.; Hill, Joanne E.; Kippen, Marc; Ryan, James M.

2014-07-01

The primary science goal of the Polarimeters for Energetic Transients (POET) mission is to measure the polarization of gamma-ray bursts over a wide energy range, from X rays to soft gamma rays. The higher-energy portion of this band (50 - 500 keV) will be covered by the High Energy Polarimeter (HEP) instrument, a non-imaging, wide field of view Compton polarimeter. Incident high-energy photons will Compton scatter in low-Z, plastic scintillator detector elements and be subsequently absorbed in high-Z, CsI(Tl) scintillator elements; polarization is detected by measuring an asymmetry in the azimuthal scatter angle distribution. The HEP design is based on our considerable experience with the development and flight of the Gamma-Ray Polarimeter Experiment (GRAPE) balloon payload. We present the design of the POET HEP instrument, which incorporates lessons learned from the GRAPE balloon design and previous work on Explorer proposal efforts, and its expected performance on a two-year SMEX mission.

High-efficiency water-loaded microwave antenna in ultra-high-frequency band

Science.gov (United States)

Gong, Zilun; Bartone, Chris; Yang, Fuyi; Yao, Jie

2018-03-01

High-index dielectrics are widely used in microwave antennas to control the radiation characteristics. Liquid water, with a high dielectric index at microwave frequency, is an interesting material to achieving tunable functionalities. Here, we demonstrate a water-loaded microwave antenna system that has high loss-tolerance and wideband tunability enabled by fluidity. Our simulation and experimental results show that the resonance frequency can be effectively tuned by the size of loading water. Furthermore, the antenna systems with water loading can achieve high radiation efficiency (>90%) in the ultra-high-frequency (0.3-3 GHz) band. This work brings about opportunities in realistic tunable microwave antenna designs enabled by liquid.

Band Gap Modulated by Electronic Superlattice in Blue Phosphorene.

Science.gov (United States)

Zhuang, Jincheng; Liu, Chen; Gao, Qian; Liu, Yani; Feng, Haifeng; Xu, Xun; Wang, Jiaou; Zhao, Jijun; Dou, Shi Xue; Hu, Zhenpeng; Du, Yi

2018-05-22

Exploring stable two-dimensional materials with appropriate band gaps and high carrier mobility is highly desirable due to the potential applications in optoelectronic devices. Here, the electronic structures of phosphorene on a Au(111) substrate are investigated by scanning tunneling spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. The substrate-induced phosphorene superstructure gives a superlattice potential, leading to a strong band folding effect of the sp band of Au(111) on the band structure. The band gap could be clearly identified in the ARPES results after examining the folded sp band. The value of the energy gap (∼1.1 eV) and the high charge carrier mobility comparable to that of black phosphorus, which is engineered by the tensile strain, are revealed by the combination of ARPES results and DFT calculations. Furthermore, the phosphorene layer on the Au(111) surface displays high surface inertness, leading to the absence of multilayer phosphorene. All these results suggest that the phosphorene on Au(111) could be a promising candidate, not only for fundamental research but also for nanoelectronic and optoelectronic applications.

Band structure and phonon properties of lithium fluoride at high pressure

Energy Technology Data Exchange (ETDEWEB)

Panchal, J. M., E-mail: amitjignesh@yahoo.co.in [Government Engineering College, Gandhinagar 382028, Gujarat (India); Department of Physics, University School of Sciences, Gujarat University, Ahmedabad 380009, Gujarat (India); Joshi, Mitesh [Government Polytechnic for Girls, Athwagate, Surat395001, Gujarat (India); Gajjar, P. N., E-mail: pngajjar@rediffmail.com [Department of Physics, University School of Sciences, Gujarat University, Ahmedabad 380009, Gujarat (India)

2016-05-23

High pressure structural and electronic properties of Lithium Fluoride (LiF) have been studied by employing an ab-initio pseudopotential method and a linear response scheme within the density functional theory (DFT) in conjunction with quasi harmonic Debye model. The band structure and electronic density of states conforms that the LiF is stable and is having insulator behavior at ambient as well as at high pressure up to 1 Mbar. Conclusions based on Band structure, phonon dispersion and phonon density of states are outlined.

Band structure and phonon properties of lithium fluoride at high pressure

International Nuclear Information System (INIS)

Panchal, J. M.; Joshi, Mitesh; Gajjar, P. N.

2016-01-01

High pressure structural and electronic properties of Lithium Fluoride (LiF) have been studied by employing an ab-initio pseudopotential method and a linear response scheme within the density functional theory (DFT) in conjunction with quasi harmonic Debye model. The band structure and electronic density of states conforms that the LiF is stable and is having insulator behavior at ambient as well as at high pressure up to 1 Mbar. Conclusions based on Band structure, phonon dispersion and phonon density of states are outlined.

High School Band Students' Perspectives of Teacher Turnover

Science.gov (United States)

Kloss, Thomas E.

2013-01-01

Teacher turnover remains an important issue in education. The least researched perspectives, though, are those of the students who experience teacher turnover. The purpose of this study was to examine how high school band students experience teacher turnover. A total of twelve students were interviewed, representing three schools that experienced…

SINGLE-BAND, TRIPLE-BAND, OR MULTIPLE-BAND HUBBARD MODELS

NARCIS (Netherlands)

ESKES, H; SAWATZKY, GA

1991-01-01

The relevance of different models, such as the one-band t-J model and the three-band Emery model, as a realistic description of the electronic structure of high-T(c) materials is discussed. Starting from a multiband approach using cluster calculations and an impurity approach, the following

Very High Energy Emission from the Binary System Cyg X-3

Science.gov (United States)

Sinitsyna, V. G.; Sinitsyna, V. Yu.

2018-03-01

Cyg X-3 is actively studied in the entire range of the electromagnetic spectrum from the radio band to ultrahigh energies. Based on the detection of ultrahigh-energy gamma-ray emission, it has been suggested that Cyg X-3 could be one of the most powerful sources of charged cosmic-ray particles in the Galaxy. We present the results of long-term observations of the Cygnus X-3 region at energies 800 GeV-100 TeV by the SHALON mirror Cherenkov telescope. In 1995 the SHALON observations revealed a new Galactic source of very high energy gamma-ray emission coincident in its coordinates with the microquasar Cyg X-3. To reliably identify the detected source with Cyg X-3, an analysis has been performed and an orbital period of 4.8 h has been found, which is a signature of Cyg X-3. A series of flares in Cyg X-3 at energies >800 GeV and their correlation with the activity in the X-ray and radio bands have been observed. The results obtained in a wide energy range for Cyg X-3, including those during the periods of relativistic jet events, are needed to find the connection and to understand the different components of an accreting binary system.

Impact of Antibody Bioconjugation on Emission and Energy Band Profile of CdSeTe/ZnS Quantum Dots

Science.gov (United States)

Torchynska, T. V.; Gomez, J. A. Jaramillo; Polupan, G.; Macotela, L. G. Vega

2018-03-01

The variation of the photoluminescence (PL) and Raman scattering spectra of CdSeTe/ZnS quantum dots (QDs) on conjugation to an antibody has been investigated. Two types of CdSeTe/ZnS QD with different emission wavelength (705 nm and 800 nm) were studied comparatively before and after conjugation to anti-pseudorabies virus antibody (AB). Nonconjugated QDs were characterized by Gaussian-type PL bands. PL shifts to higher energy and asymmetric shape of PL bands was detected in PL spectra of bioconjugated QDs. The surface-enhanced Raman scattering effect was exhibited by the bioconjugated CdSeTe/ZnS QDs, indicating that the excitation light used in the Raman study generated electric dipoles in the AB molecules. The optical bandgap of the CdSeTe core was calculated numerically as a function of its radius based on an effective mass approximation model. The energy band diagrams for non- and bioconjugated CdSeTe/ZnS QDs were obtained, revealing a type II quantum well in the CdSeTe core. The calculations show that AB dipoles, excited in the bioconjugated QDs, stimulate a change in the energy band diagram of the QDs that alters the PL spectrum. These results could be useful for improving the sensitivity of QD biosensors.

Relaxation and cross section effects in valence band photoemission spectroscopy

International Nuclear Information System (INIS)

McFeely, F.R.

1976-09-01

Various problems relating to the interpretation of valence band x-ray photoemission (XPS) spectra of solids are discussed. The experiments and calculations reported herein deal with the following questions: (1) To what extent do many-body effects manifest themselves in an XPS valence band spectrum, and thus invalidate a direct comparison between the photoemission energy distribution, I(E), and the density of states, N(E), calculated on the basis of ground-state one-electron theory. (2) The effect of the binding-energy-dependent photoemission cross section on I(E) at XPS energies. (3) In favorable cases indicated by (1) and (2) we examine the effect of the interaction of the crystal field with the apparent spin-orbit splittings of core levels observed in XPS spectra. (4) The use of tight binding band structure calculations to parameterize the electronic band structure from XPS and other data is described. (5) The use of high energy angle-resolved photoemission on oriented single crystals to gain orbital symmetry information is discussed. (6) The evolution of the shape of the photoemission energy distribution (of polycrystalline Cu) as a function of photon energy from 50 less than or equal h ω less than or equal 175 is discussed

Reduced graphene oxide synthesis by high energy ball milling

Energy Technology Data Exchange (ETDEWEB)

Mondal, O. [Department of Physics, M.U.C Women' s College, Burdwan 713104 (India); Mitra, S. [MLS Prof' s Unit, Indian Association for the Cultivation of Science, Kolkata 700032 (India); Pal, M. [CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Datta, A. [University School of Basic and Applied Science (USBAS), Guru Gobind Singh Indraprastha University, New Delhi 110075 (India); Dhara, S. [Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Chakravorty, D., E-mail: mlsdc@iacs.res.in [MLS Prof' s Unit, Indian Association for the Cultivation of Science, Kolkata 700032 (India)

2015-07-01

Graphene oxide is transformed to reduced graphene oxide by high energy ball milling in inert atmosphere. The process of ball milling introduces defects and removes oxygen functional groups, thereby creating the possibility of fine tuning the band gap of all intermediate stages of the structural evolution. A limit of the backbone sp{sup 2} network structure has been found which should be able to accommodate defects, before amorphization sets in. The amorphization of graphene oxide is achieved rather quickly in comparison to that of graphite. From thermogravimetric and differential scanning calorimetric analysis along with Fourier transform infrared (FTIR) and Raman spectroscopic studies, it is found that the number of oxygen-containing groups decreases at a faster rate than that of aromatic double bonds with increasing ball milling time with a maximum limit of 3 h. Several characterization techniques (FTIR, Raman, UV–Visible and X-ray photoelectron spectroscopy) have confirmed that the material synthesized is, indeed, reduced graphene oxide. - Highlights: • Graphene oxide is transformed to reduced graphene oxide by high energy ball milling in inert atmosphere. • Fine tuning the band gap by introducing defects and removing oxygen functional groups. • Introduction of excess defects leads to amorphization. • Photoluminescence has been observed in the UV-blue region.

Multiple triaxial bands and abnormal signature inversion in 7433As

International Nuclear Information System (INIS)

Hu, Shi-Peng; Ma, Hai-Liang; Cao, Xue-Peng; Wu, Xiao-Guang; Zhang, Huan-Qiao; Hua, Hui; Sun, Jun-Jie; Sun, Hui-Bin; He, Chuang-Ye; Zheng, Yun; Li, Guang-Sheng; Li, Cong-Bo; Yao, Shun-He; Yu, Bei-Bei; Wang, Jin-Long; Li, Hong-We; Wu, Yi-Heng; Liu, Jia-Jian; Luo, Peng-Wei; Xu, Chuan

2014-01-01

Excited states of the odd–odd nucleus 74 As have been investigated via heavy ion fusion evaporation reaction 70 Zn( 7 Li,3n) 74 As at beam energy of 30 MeV. The properties of the positive- and the negative- parity bands can be interpreted in terms of the Cranked Nilsson–Strutinsky (CNS) model calculations which show that the observed bands are built on the triaxial deformed shape. The inversion of the favored and unfavored signature branches observed in the positive-parity bands presents at high spins rather than normal signature inversion occurs at low spins. This phenomenon may be explained as the origin of unpaired band crossing in a highly rotating triaxial nucleus.

Simulation study of the high intensity S-Band photoinjector

Energy Technology Data Exchange (ETDEWEB)

Zhu, Xiongwei; Nakajima, Kazuhisa [High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan)

2001-10-01

In this paper, we report the results of simulation study of the high intensity S-Band photoinjector. The aim of the simulation study is to transport high bunch charge with low emittance evolution. The simulation result shows that 7nC bunch with rms emittance 22.3 {pi} mm mrad can be outputted at the exit of photoinjector. (author)

Simulation study of the high intensity S-Band photoinjector

International Nuclear Information System (INIS)

Zhu, Xiongwei; Nakajima, Kazuhisa

2001-01-01

In this paper, we report the results of simulation study of the high intensity S-Band photoinjector. The aim of the simulation study is to transport high bunch charge with low emittance evolution. The simulation result shows that 7nC bunch with rms emittance 22.3 π mm mrad can be outputted at the exit of photoinjector. (author)

Electric-dipole effect of defects on the energy band alignment of rutile and anatase TiO₂.

Science.gov (United States)

Zhang, Daoyu; Yang, Minnan; Dong, Shuai

2015-11-21

Titanium dioxide materials have been studied intensively and extensively for photocatalytic applications. A long-standing open question is the energy band alignment of rutile and anatase TiO2 phases, which can affect the photocatalytic process in the composite system. There are basically two contradictory viewpoints about the alignment of these two TiO2 phases supported by the respective experiments: (1) straddling type and (2) staggered type. In this work, our DFT plus U calculations show that the perfect rutile(110) and anatase(101) surfaces have the straddling type band alignment, whereas the surfaces with defects can turn the band alignment into the staggered type. The electric dipoles induced by defects are responsible for the reversal of band alignment. Thus the defects introduced during the preparation and post-treatment processes of materials are probably the answer to the above open question regarding the band alignment, which can be considered in real practice to tune the photocatalytic activity of materials.

Graphene oxide quantum dot-sensitized porous titanium dioxide microsphere: Visible-light-driven photocatalyst based on energy band engineering.

Science.gov (United States)

Zhang, Yu; Qi, Fuyuan; Li, Ying; Zhou, Xin; Sun, Hongfeng; Zhang, Wei; Liu, Daliang; Song, Xi-Ming

2017-07-15

We report a novel graphene oxide quantum dot (GOQD)-sensitized porous TiO 2 microsphere for efficient photoelectric conversion. Electro-chemical analysis along with the Mott-Schottky equation reveals conductivity type and energy band structure of the two semiconductors. Based on their energy band structures, visible light-induced electrons can transfer from the p-type GOQD to the n-type TiO 2 . Enhanced photocurrent and photocatalytic activity in visible light further confirm the enhanced separation of electrons and holes in the nanocomposite. Copyright © 2017 Elsevier Inc. All rights reserved.

Decay out of the yrast and excited highly-deformed bands in the even-even nucleus {sup 134}Nd

Energy Technology Data Exchange (ETDEWEB)

Petrache, C.M.; Bazzacco, D.; Lunardi, S. [Sezione di Padova (Italy)] [and others

1996-12-31

The resolving power achieved by the new generation of {gamma}-ray detector arrays allows now to observe transitions with intensities of the order of {approximately}10{sup {minus}3} of the population of the final residual nucleus, making therefore feasible the study of the very weakly populated excited bands built on the superdeformed (SD) minimum or of the decay out of the SD bands. As a matter of fact, numerous excited SD bands have been observed in the different regions of superdeformation, which led to a deeper understanding of the single-particle excitation in the second minimum. The first experimental breakthrough in the study of the decay out process has been achieved in the odd-even {sup 133,135}Nd nuclei of the A=130 mass region. There, the observation of the discrete linking transitions has been favored by the relatively higher intensity of the highly-deformed (HD) bands ({approximately}10%), as well as by the small excitation energy with respect to the yrast line in the decay-out region ({approximately}1 MeV). No discrete linking transitions have been so far observed in the A=80, 150 mass regions. The present results suggest that the decay out of the HD bands in {sup 134}Nd is triggered by the crossing with the N=4 [402]5/2{sup +} Nilsson orbital, that has a smaller deformation than the corresponding N=6 intruder configuration. The crossing favours the mixing with the ND rotational bands strongly enhancing the decay-out process and weakening the in-band transition strength. The HD band becomes fragmented and looses part of its character. The intensity of the decay-out transitions increases when the spin of the HD state decreases, indicating enhanced ND amplitude in the wavefunction when going down the band. Lifetime measurements of the HD bands are crucial to further elucidate the decay-out process.

Density functional theory calculations for the band gap and formation energy of Pr4-xCaxSi12O3+xN18-x; a highly disordered compound with low symmetry and a large cell size.

Science.gov (United States)

Hong, Sung Un; Singh, Satendra Pal; Pyo, Myoungho; Park, Woon Bae; Sohn, Kee-Sun

2017-06-28

A novel oxynitride compound, Pr 4-x Ca x Si 12 O 3+x N 18-x , synthesized using a solid-state route has been characterized as a monoclinic structure in the C2 space group using Rietveld refinement on synchrotron powder X-ray diffraction data. The crystal structure of this compound was disordered due to the random distribution of Ca/Pr and N/O ions at various Wyckoff sites. A pragmatic approach for an ab initio calculation based on density function theory (DFT) for this disordered compound has been implemented to calculate an acceptable value of the band gap and formation energy. In general, for the DFT calculation of a disordered compound, a sufficiently large super cell and infinite variety of ensemble configurations is adopted to simulate the random distribution of ions; however, such an approach is time consuming and cost ineffective. Even a single unit cell model gave rise to 43 008 independent configurations as an input model for the DFT calculations. Since it was nearly impossible to calculate the formation energy and the band gap energy for all 43 008 configurations, an elitist non-dominated sorting genetic algorithm (NSGA-II) was employed to find the plausible configurations. In the NSGA-II, all 43 008 configurations were mathematically treated as genomes and the calculated band gap and the formation energy as the objective (fitness) function. Generalized gradient approximation (GGA) was first employed in the preliminary screening using NSGA-II, and thereafter a hybrid functional calculation (HSE06) was executed only for the most plausible GGA-relaxed configurations with lower formation and higher band gap energies. The final band gap energy (3.62 eV) obtained after averaging over the selected configurations, resembles closely the experimental band gap value (4.11 eV).

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

International Nuclear Information System (INIS)

Kozyukhin, S.; Golovchak, R.; Kovalskiy, A.; Shpotyuk, O.; Jain, H.

2011-01-01

High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As x Se 100−x , As x S 100−x , Ge x Se 100−x and Ge x S 100−x chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

Energy Technology Data Exchange (ETDEWEB)

Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

2011-04-15

High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

Structure of dipole bands in 106In

International Nuclear Information System (INIS)

Deo, A. Y.; Palit, R.; Naik, Z.; Joshi, P. K.; Mazumdar, I.; Sihotra, S.; Mehta, D.; Kumar, S.; Chakrabarti, R.; Kshetri, R.; Jain, H. C.

2009-01-01

High spin states in neutron-deficient 106 In were investigated using 78 Se( 32 S,p3n) reaction at 125 MeV. The level scheme is extended up to 7 MeV of excitation energy for the negative parity states constituting four dipole bands, and the positive parity states which mainly exhibit single-particle excitations are extended up to 5 MeV. Projected deformed Hartree-Fock calculations were carried out to understand the configurations of different bands in this nucleus.

Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

Directory of Open Access Journals (Sweden)

Diana E. Proffit

2010-11-01

Full Text Available Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides Zn0, In2O3, and SnO2 as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS are summarized and compared. The presented collection provides an extensive data set of technologically relevant electronic properties of photovoltaic transparent electrode materials and illustrates how these relate to the underlying defect chemistry, the dependence of surface dipoles on crystallographic orientation and/or surface termination, and Fermi level pinning.

Electron energy-loss spectroscopy on n-type doped high-temperature superconductors and related systems

International Nuclear Information System (INIS)

Alexander, M.

1992-08-01

Electron-enery loss spectroscopy measurements on n-type doped high temperature superconductors, their undoped parent compounds, Y-doped Bi 2 Sr 2 CaCu 2 O 8 and some rare earth oxides are presented. The undoped parent compounds Ln 2 CuO 4 (Ln = Pr, Nd, Sm) are charge transfer insulators with a charge transfer energy gap of 1.4 eV. The conduction band lies in the CuO 2 plane and has mainly Cu3d x 2 -y 2 character. O2p x,y states are slightly hybridized with this band. Upon partially substituting the trivalent Ln ions by tetravalent Ce or Th and monovalent F for the O ions, electron doping of the CuO 2 plane occurs with the electrons having mainly Cu3d character. A rigid band behaviour is proposed by several band structure calculations could be ruled out, as well as the occurence of so called 'mid-gap' states appearing inside the band gap between the valence and conduction bands. The position of the Fermi level was found to be at the bottom of the conduction bands. No measurable influence of the reduction process, necessary to obtain superconductivity, was detected in the unoccupied density of states. Characteristics shifts of the measured oxygen and copper edges were correlated with crossing the metal-insulator transition. These shifts are most probably caused by an improved screening capacity of the free charge carriers. A similar effect was also observed in Y-doped Bi 2 Sr 2 CaCu 2 O 8 . Thus, it was possible to show that the disappearance of the valence band hole states upon doping did not occur in a rigid-band-like manner. The low energy excitations in Nd 1.85 Ce 0.15 CuO 4-δ showed a plasmon like excitation at about 1 eV as well as a reduction and an energy shift of the charge transfer excitation. The dispersion of this plasmon excitation was determined. (orig.)

High-frequency response and the possibilities of frequency-tunable narrow-band terahertz amplification in resonant tunneling nanostructures

International Nuclear Information System (INIS)

Kapaev, V. V.; Kopaev, Yu. V.; Savinov, S. A.; Murzin, V. N.

2013-01-01

The characteristics of the high-frequency response of single- and double-well resonant tunneling structures in a dc electric field are investigated on the basis of the numerical solution of a time-dependent Schrödinger equation with open boundary conditions. The frequency dependence of the real part of high frequency conductivity (high-frequency response) in In 0.53 Ga 0.47 As/AlAs/InP structures is analyzed in detail for various values of the dc voltage V dc in the negative differential resistance (NDR) region. It is shown that double-well three-barrier structures are promising for the design of terahertz-band oscillators. The presence of two resonant states with close energies in such structures leads to a resonant (in frequency) response whose frequency is determined by the energy difference between these levels and can be controlled by varying the parameters of the structure. It is shown that, in principle, such structures admit narrow-band amplification, tuning of the amplification frequency, and a fine control of the amplification (oscillation) frequency in a wide range of terahertz frequencies by varying a dc electric voltage applied to the structure. Starting from a certain width of the central intermediate barrier in double-well structures, one can observe a collapse of resonances, where the structure behaves like a single-well system. This phenomenon imposes a lower limit on the oscillation frequency in three-barrier resonant tunneling structures.

Composite Piezoelectric Rubber Band for Energy Harvesting from Breathing and Limb Motion

International Nuclear Information System (INIS)

Wang, Jhih-Jhe; Su, Huan-Jan; Hsu, Chang-I; Su, Yu-Chuan

2014-01-01

We have successfully demonstrated the design and microfabrication of piezoelectric rubber bands and their application in energy harvesting from human motions. Composite polymeric and metallic microstructures with embedded bipolar charges are employed to realize the desired stretchability and electromechanical sensitivity. In the prototype demonstration, multilayer PDMS cellular structures coated with PTFE films and stretchable gold electrodes are fabricated and implanted with bipolar charges. The composite structures show elasticity of 300∼600 kPa and extreme piezoelectricity of d 33 >2000 pC/N and d 31 >200 pC/N. For a working volume of 2.5cm×2.5cm×0.3mm, 10% (or 2.5mm) stretch results in effective d 31 of >17000 pC/N. It is estimated that electric charge of >0.2 μC can be collected and stored per breath (or 2.5cm deformation). As such, the composite piezoelectric rubber bands (with spring constants of ∼200 N/m) can be mounted on elastic waistbands to harvest the circumferential stretch during breathing, or on pads around joints to harvest the elongation during limb motion. Furthermore, the wearable piezoelectric structures can be spread, stacked and connected to charge energy storages and power micro devices

Composite Piezoelectric Rubber Band for Energy Harvesting from Breathing and Limb Motion

Science.gov (United States)

Wang, Jhih-Jhe; Su, Huan-Jan; Hsu, Chang-I.; Su, Yu-Chuan

2014-11-01

We have successfully demonstrated the design and microfabrication of piezoelectric rubber bands and their application in energy harvesting from human motions. Composite polymeric and metallic microstructures with embedded bipolar charges are employed to realize the desired stretchability and electromechanical sensitivity. In the prototype demonstration, multilayer PDMS cellular structures coated with PTFE films and stretchable gold electrodes are fabricated and implanted with bipolar charges. The composite structures show elasticity of 300~600 kPa and extreme piezoelectricity of d33 >2000 pC/N and d31 >200 pC/N. For a working volume of 2.5cm×2.5cm×0.3mm, 10% (or 2.5mm) stretch results in effective d31 of >17000 pC/N. It is estimated that electric charge of >0.2 μC can be collected and stored per breath (or 2.5cm deformation). As such, the composite piezoelectric rubber bands (with spring constants of ~200 N/m) can be mounted on elastic waistbands to harvest the circumferential stretch during breathing, or on pads around joints to harvest the elongation during limb motion. Furthermore, the wearable piezoelectric structures can be spread, stacked and connected to charge energy storages and power micro devices.

Energy Band Gap Dependence of Valley Polarization of the Hexagonal Lattice

Science.gov (United States)

Ghalamkari, Kazu; Tatsumi, Yuki; Saito, Riichiro

2018-02-01

The origin of valley polarization of the hexagonal lattice is analytically discussed by tight binding method as a function of energy band gap. When the energy gap decreases to zero, the intensity of optical absorption becomes sharp as a function of k near the K (or K') point in the hexagonal Brillouin zone, while the peak intensity at the K (or K') point keeps constant with decreasing the energy gap. When the dipole vector as a function of k can have both real and imaginary parts that are perpendicular to each other in the k space, the valley polarization occurs. When the dipole vector has only real values by selecting a proper phase of wave functions, the valley polarization does not occur. The degree of the valley polarization may show a discrete change that can be relaxed to a continuous change of the degree of valley polarization when we consider the life time of photo-excited carrier.

Structure research of L-band travelling-wave buncher

International Nuclear Information System (INIS)

Zhou Wenzhen; Zhang Xiangyang; Ding Shuling

1996-01-01

The authors introduce design and tuning of two kinds of the buncher of the L-band high current injector of China Institute of Atomic Energy. Characteristics of the few cavities buncher is shown and the effects of the two modes of the buncher in high current injector are given

An Underwater Acoustic Vector Sensor with High Sensitivity and Broad Band

Directory of Open Access Journals (Sweden)

Hu Zhang

2014-05-01

Full Text Available Recently, acoustic vector sensor that use accelerators as sensing elements are widely used in underwater acoustic engineering, but the sensitivity of which at low frequency band is usually lower than -220 dB. In this paper, using a piezoelectric trilaminar optimized low frequency sensing element, we designed a high sensitivity internal placed ICP piezoelectric accelerometer as sensing element. Through structure optimization, we made a high sensitivity, broadband, small scale vector sensor. The working band is 10-2000 Hz, sound pressure sensitivity is -185 dB (at 100 Hz, outer diameter is 42 mm, length is 80 mm.

Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors

Science.gov (United States)

Mazzola, F.; Wells, J. W.; Pakpour-Tabrizi, A. C.; Jackman, R. B.; Thiagarajan, B.; Hofmann, Ph.; Miwa, J. A.

2018-01-01

We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

Study on ground state energy band of even 114-124Cd isotopes under the framework of interacting boson model (IBM-1)

International Nuclear Information System (INIS)

Hossain, I.; Abdullah, Hewa Y.; Ahmed, I.M.; Saeed, M.A.; Ahmad, S.T.

2012-01-01

In this research, the ground state gamma ray bands of even 114-124 Cd isotopes are calculated using interacting boson model (IBM-1). The theoretical energy levels for Z = 48, N = 66–76 up to spin-parity 8 + have been obtained by using PHINT computer program. The values of the parameters in the IBM-1 Hamiltonian yield the best fit to the experimental energy spectrum. The calculated results of the ground state energy band are compared to the previous experimental results and the obtained theoretical calculations in IBM-1 are in good agreement with the experimental energy level. (author)

Energy band structure tailoring of vertically aligned InAs/GaAsSb quantum dot structure for intermediate-band solar cell application by thermal annealing process.

Science.gov (United States)

Liu, Wei-Sheng; Chu, Ting-Fu; Huang, Tien-Hao

2014-12-15

This study presents an band-alignment tailoring of a vertically aligned InAs/GaAs(Sb) quantum dot (QD) structure and the extension of the carrier lifetime therein by rapid thermal annealing (RTA). Arrhenius analysis indicates a larger activation energy and thermal stability that results from the suppression of In-Ga intermixing and preservation of the QD heterostructure in an annealed vertically aligned InAs/GaAsSb QD structure. Power-dependent and time-resolved photoluminescence were utilized to demonstrate the extended carrier lifetime from 4.7 to 9.4 ns and elucidate the mechanisms of the antimony aggregation resulting in a band-alignment tailoring from straddling to staggered gap after the RTA process. The significant extension in the carrier lifetime of the columnar InAs/GaAsSb dot structure make the great potential in improving QD intermediate-band solar cell application.

Electron correlations in narrow band systems

International Nuclear Information System (INIS)

Kishore, R.

1983-01-01

The effect of the electron correlations in narrow bands, such as d(f) bands in the transition (rare earth) metals and their compounds and the impurity bands in doped semiconductors is studied. The narrow band systems is described, by the Hubbard Hamiltonian. By proposing a local self-energy for the interacting electron, it is found that the results are exact in both atomic and band limits and reduce to the Hartree Fock results for U/Δ → 0, where U is the intra-atomic Coulomb interaction and Δ is the bandwidth of the noninteracting electrons. For the Lorentzian form of the density of states of the noninteracting electrons, this approximation turns out to be equivalent to the third Hubbard approximation. A simple argument, based on the mean free path obtained from the imaginary part of the self energy, shows how the electron correlations can give rise to a discontinous metal-nonmetal transition as proposed by Mott. The band narrowing and the existence of the satellite below the Fermi energy in Ni, found in photoemission experiments, can also be understood. (Author) [pt

High Selectivity Dual-Band Bandpass Filter with Tunable Lower Passband

Directory of Open Access Journals (Sweden)

Wei-Qiang Pan

2015-01-01

Full Text Available This paper presents a novel method to design dual-band bandpass filters with tunable lower passband and fixed upper passband. It utilizes a trimode resonator with three controllable resonant modes. Discriminating coupling is used to suppress the unwanted mode to avoid the interference. Varactors are utilized to realize tunable responses. The bandwidth of the two bands can be controlled individually. Transmission zeros are generated near the passband edges, resulting in high selectivity. For demonstration, a tunable bandpass filter is implemented. Good agreement between the prediction and measurement validates the proposed method.

First observation of yrast band in odd-odd 162Lu

International Nuclear Information System (INIS)

Zhang, Y.H.; Yuan, G.J.; Liu, X.A.

1996-01-01

High spin states of the odd-odd 162 Lu nucleus have been studied via 147 Sm( 19 F, 4nγ) 162 Lu reaction at 95MeV beam energy. Level scheme for yrast band based on π[h 11/2 ] υ[i 13/2 ] quasiparticle configuration was established up to I π =(23 - ) for the first time. This band shows the signature inversion in energy before backbending generally appeared in this mass region. It is stressed that the signature splitting in 162 Lu is larger than that in the 160 Tm nucleus. (orig.)

Focusing Optics for High-Energy X-ray Diffraction

DEFF Research Database (Denmark)

Leinert, U.; Schulze, C.; Honkimäki, V.

1998-01-01

Novel focusing optical devices have been developed for synchrotron radiation in the energy range 40-100 keV. Firstly, a narrow-band-pass focusing energy-tuneable fixed-exit monochromator was constructed by combining meridionally bent Laue and Bragg crystals. Dispersion compensation was applied...

Modeling and analysis of renewable energy obligations and technology bandings in the UK electricity market

NARCIS (Netherlands)

Gurkan, G.; Langestraat, R.

In the UK electricity market, generators are obliged to produce part of their electricity with renewable energy resources in accordance with the Renewable Obligation Order. Since 2009 technology banding has been added, meaning that different technologies are rewarded with a different number of

Application of back-propagation artificial neural network (ANN) to predict crystallite size and band gap energy of ZnO quantum dots

Science.gov (United States)

Pelicano, Christian Mark; Rapadas, Nick; Cagatan, Gerard; Magdaluyo, Eduardo

2017-12-01

Herein, the crystallite size and band gap energy of zinc oxide (ZnO) quantum dots were predicted using artificial neural network (ANN). Three input factors including reagent ratio, growth time, and growth temperature were examined with respect to crystallite size and band gap energy as response factors. The generated results from neural network model were then compared with the experimental results. Experimental crystallite size and band gap energy of ZnO quantum dots were measured from TEM images and absorbance spectra, respectively. The Levenberg-Marquardt (LM) algorithm was used as the learning algorithm for the ANN model. The performance of the ANN model was then assessed through mean square error (MSE) and regression values. Based on the results, the ANN modelling results are in good agreement with the experimental data.

Angle-resolved photoemission spectroscopy of band tails in lightly doped cuprates

OpenAIRE

Alexandrov, A. S.; Reynolds, K.

2007-01-01

We amend ab initio strongly-correlated band structures by taking into account the band-tailing phenomenon in doped charge-transfer Mott-Hubbard insulators. We show that the photoemission from band tails accounts for sharp "quasi-particle" peaks, rapid loss of their intensities in some directions of the Brillouin zone ("Fermi-arcs") and high-energy "waterfall" anomalies as a consequence of matrix-element effects of disorder-localised states in the charge-transfer gap of doped cuprates.

High performance data acquisition with InfiniBand

International Nuclear Information System (INIS)

Adamczewski, Joern; Essel, Hans G.; Kurz, Nikolaus; Linev, Sergey

2008-01-01

For the new experiments at FAIR new concepts of data acquisition systems have to be developed like the distribution of self-triggered, time stamped data streams over high performance networks for event building. In this concept any data filtering is done behind the network. Therefore the network must achieve up to 1 GByte/s bi-directional data transfer per node. Detailed simulations have been done to optimize scheduling mechanisms for such event building networks. For real performance tests InfiniBand has been chosen as one of the fastest available network technology. The measurements of network event building have been performed on different Linux clusters from four to over hundred nodes. Several InfiniBand libraries have been tested like uDAPL, Verbs, or MPI. The tests have been integrated in the data acquisition backbone core software DABC, a general purpose data acquisition library. Detailed results are presented. In the worst cases (over hundred nodes) 50% of the required bandwidth can be already achieved. It seems possible to improve these results by further investigations

Monolayer CS as a metal-free photocatalyst with high carrier mobility and tunable band structure: a first-principles study

Science.gov (United States)

Yang, Xiao-Le; Ye, Xiao-Juan; Liu, Chun-Sheng; Yan, Xiao-Hong

2018-02-01

Producing hydrogen fuel using suitable photocatalysts from water splitting is a feasible method to harvest solar energy. A desired photocatalyst is expected to have suitable band gap, moderate band edge position, and high carrier mobility. By employing first-principles calculations, we explore a α-CS monolayer as a metal-free efficient photocatalyst. The α-CS monolayer shows good energetic, dynamic, and thermal stabilities and is insoluble in water, suggesting its experimental practicability. Monolayer and bilayer α-CS present not only appropriate band gaps for visible and ultraviolet light absorption but also moderate band alignments with water redox potentials in pH neutral water. Remarkably, the α-CS monolayer exhibits high (up to 8453.19 cm2 V-1s-1 for hole) and anisotropic carrier mobility, which is favorable to the migration and separation of photogenerated carriers. In addition, monolayer α-CS experiences an interesting semiconductor-metal transition by applying uniaxial strain and external electric field. Moreover, α-CS under certain strain and electric field is still dynamically stable with the absence of imaginary frequencies. Furthermore, we demonstrate that the graphite (0 0 1) surface is a potential substrate for the α-CS growth with the intrinsic properties of α-CS maintaining. Therefore, our results could pave the way for the application of α-CS as a promising photocatalyst.

A Method against Interrupted-Sampling Repeater Jamming Based on Energy Function Detection and Band-Pass Filtering

Directory of Open Access Journals (Sweden)

Hui Yuan

2017-01-01

Full Text Available Interrupted-sampling repeater jamming (ISRJ is a new kind of coherent jamming to the large time-bandwidth linear frequency modulation (LFM signal. Many jamming modes, such as lifelike multiple false targets and dense false targets, can be made through setting up different parameters. According to the “storage-repeater-storage-repeater” characteristics of the ISRJ and the differences in the time-frequency-energy domain between the ISRJ signal and the target echo signal, one new method based on the energy function detection and band-pass filtering is proposed to suppress the ISRJ. The methods mainly consist of two parts: extracting the signal segments without ISRJ and constructing band-pass filtering function with low sidelobe. The simulation results show that the method is effective in the ISRJ with different parameters.

A high energy photon beam derived from neutral strange particle decay

International Nuclear Information System (INIS)

Reibel, K.; Ruchti, R.

1982-01-01

Conventional methods for generating photon beams include: tagged beams in which the photons are derived from electron bremsstrahlung in a radiator target; and broad band beams in which the photons are derived from π/sup 0/ decay - the hadronic component (n, K/sub s//sup 0/) accompanying such a beam is usually suppressed by passage of the beam through a low Z (D/sub 2/) filter. Although one can generate high energy photons by these techniques, the major drawback to these beams is that the photon energy spectrum obtained is peaked at very low E/sub γ/. (Recall that the bremsstrahlung spectrum falls as 1/k). With very high energy proton beams (20 TeV/c), one can image other alternatives for photon beam design. The authors consider one such option here

NLTE ANALYSIS OF HIGH-RESOLUTION H -BAND SPECTRA. I. NEUTRAL SILICON

Energy Technology Data Exchange (ETDEWEB)

Zhang, Junbo; Shi, Jianrong; Liu, Chao [Key Laboratory of Optical Astronomy, National Astronomical Observatories, Chinese Academy of Sciences, A20 Datun Road, Chaoyang District, Beijing 100012 (China); Pan, Kaike [Apache Point Observatory and New Mexico State University, P.O. Box 59, Sunspot, NM, 88349-0059 (United States); Prieto, Carlos Allende, E-mail: sjr@bao.ac.cn [Instituto de Astrofísica de Canarias, E-38205 La Laguna, Tenerife (Spain)

2016-12-20

We investigated the reliability of our silicon atomic model and the influence of non-local thermodynamical equilibrium (NLTE) on the formation of neutral silicon (Si i) lines in the near-infrared (near-IR) H -band. We derived the differential Si abundances for 13 sample stars with high-resolution H -band spectra from the Apache Point Observatory Galactic Evolution Experiment (APOGEE), as well as from optical spectra, both under local thermodynamical equilibrium (LTE) and NLTE conditions. We found that the differences between the Si abundances derived from the H -band and from optical lines for the same stars are less than 0.1 dex when the NLTE effects are included, and that NLTE reduces the line-to-line scatter in the H -band spectra for most sample stars. These results suggest that our Si atomic model is appropriate for studying the formation of H -band Si lines. Our calculations show that the NLTE corrections of the Si i H -band lines are negative, i.e., the final Si abundances will be overestimated in LTE. The corrections for strong lines depend on surface gravity, and tend to be larger for giants, reaching ∼−0.2 dex in our sample, and up to ∼−0.4 dex in extreme cases of APOGEE targets. Thus, the NLTE effects should be included in deriving silicon abundances from H -band Si i lines, especially for the cases where only strong lines are available.

Band width and multiple-angle valence-state mapping of diamond

International Nuclear Information System (INIS)

Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J.

1997-01-01

The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid's many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of ±1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84 degrees cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space

Band width and multiple-angle valence-state mapping of diamond

Energy Technology Data Exchange (ETDEWEB)

Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid`s many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of {+-}1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84{degrees} cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space.

Band structure and orbital character of monolayer MoS2 with eleven-band tight-binding model

Science.gov (United States)

Shahriari, Majid; Ghalambor Dezfuli, Abdolmohammad; Sabaeian, Mohammad

2018-02-01

In this paper, based on a tight-binding (TB) model, first we present the calculations of eigenvalues as band structure and then present the eigenvectors as probability amplitude for finding electron in atomic orbitals for monolayer MoS2 in the first Brillouin zone. In these calculations we are considering hopping processes between the nearest-neighbor Mo-S, the next nearest-neighbor in-plan Mo-Mo, and the next nearest-neighbor in-plan and out-of-plan S-S atoms in a three-atom based unit cell of two-dimensional rhombic MoS2. The hopping integrals have been solved in terms of Slater-Koster and crystal field parameters. These parameters are calculated by comparing TB model with the density function theory (DFT) in the high-symmetry k-points (i.e. the K- and Γ-points). In our TB model all the 4d Mo orbitals and the 3p S orbitals are considered and detailed analysis of the orbital character of each energy level at the main high-symmetry points of the Brillouin zone is described. In comparison with DFT calculations, our results of TB model show a very good agreement for bands near the Fermi level. However for other bands which are far from the Fermi level, some discrepancies between our TB model and DFT calculations are observed. Upon the accuracy of Slater-Koster and crystal field parameters, on the contrary of DFT, our model provide enough accuracy to calculate all allowed transitions between energy bands that are very crucial for investigating the linear and nonlinear optical properties of monolayer MoS2.

Band structures in near spherical 138Ce

Science.gov (United States)

Bhattacharjee, T.; Chanda, S.; Bhattacharyya, S.; Basu, S. K.; Bhowmik, R. K.; Das, J. J.; Pramanik, U. Datta; Ghugre, S. S.; Madhavan, N.; Mukherjee, A.; Mukherjee, G.; Muralithar, S.; Singh, R. P.

2009-06-01

The high spin states of N=80138Ce have been populated in the fusion evaporation reaction 130Te( 12C, 4n) 138Ce at E=65 MeV. The γ transitions belonging to various band structures were detected and characterized using an array of five Clover Germanium detectors. The level scheme has been established up to a maximum spin and excitation energy of 23 ℏ and 9511.3 keV, respectively, by including 53 new transitions. The negative parity ΔI=1 band, developed on the 6536.3 keV 15 level, has been conjectured to be a magnetic rotation band following a semiclassical analysis and comparing the systematics of similar bands in the neighboring nuclei. The said band is proposed to have a four quasiparticle configuration of [πgh]⊗[. Other band structures are interpreted in terms of multi-quasiparticle configurations, based on Total Routhian Surface (TRS) calculations. For the low and medium spin states, a shell model calculation using a realistic two body interaction has been performed using the code OXBASH.

Design of broadband multilayer dichroic coating for a high-efficiency solar energy harvesting system.

Science.gov (United States)

Jiachen, Wang; Lee, Sang Bae; Lee, Kwanil

2015-05-20

We report on the design and performance of a broadband dichroic coating for a solar energy conversion system. As a spectral beam splitter, the coating facilitates a hybrid system that combines a photovoltaic cell with a thermal collector. When positioned at a 45° angle with respect to incident light, the coating provides high reflectance in the 40-1100 nm and high transmission in the 1200-2000 nm ranges for a photovoltaic cell and a thermal collector, respectively. Numerical simulations show that our design leads to a sharp transition between the reflection and transmission bands, low ripples in both bands, and slight polarization dependence.

High-gradient breakdown studies of an X-band Compact Linear Collider prototype structure

Directory of Open Access Journals (Sweden)

Xiaowei Wu

2017-05-01

Full Text Available A Compact Linear Collider prototype traveling-wave accelerator structure fabricated at Tsinghua University was recently high-gradient tested at the High Energy Accelerator Research Organization (KEK. This X-band structure showed good high-gradient performance of up to 100  MV/m and obtained a breakdown rate of 1.27×10^{−8} per pulse per meter at a pulse length of 250 ns. This performance was similar to that of previous structures tested at KEK and the test facility at the European Organization for Nuclear Research (CERN, thereby validating the assembly and bonding of the fabricated structure. Phenomena related to vacuum breakdown were investigated and are discussed in the present study. Evaluation of the breakdown timing revealed a special type of breakdown occurring in the immediately succeeding pulse after a usual breakdown. These breakdowns tended to occur at the beginning of the rf pulse, whereas usual breakdowns were uniformly distributed in the rf pulse. The high-gradient test was conducted under the international collaboration research program among Tsinghua University, CERN, and KEK.

Band-Structure of Thallium by the LMTO Method

DEFF Research Database (Denmark)

Holtham, P. M.; Jan, J. P.; Skriver, Hans Lomholt

1977-01-01

by an energy gap. The 6d and 7s bands were found to be far above the Fermi level and the 5d states were found to be far below it. Fermi surface properties and the electronic specific heat are computed and compared with experiment. The joint density of states has also been computed and is in reasonable...... and p bands for the HCP structure. Energy bands have been evaluated both with and without spin-orbit coupling which is particularly large in thallium. Energy bands close to the Fermi level were found to be mainly 6p like in character. The 6s states lay below the 6p bands and were separated from them......The relativistic band structure of thallium has been calculated using the linear muffin-tin orbital (LMTO) method. The positions and extents of the bands were found to follow the Wigner-Seitz rule approximately, and the origin of the dispersion of the bands was established from the canonical s...

Impurity band Mott insulators: a new route to high Tc superconductivity

Directory of Open Access Journals (Sweden)

Ganapathy Baskaran

2008-01-01

Full Text Available Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

Absolute generalized oscillator strength for the Lyman--Birge--Hopfield band of N2 as determined by high energy electron impact spectroscopy

International Nuclear Information System (INIS)

Wong, T.C.; Lee, J.S.; Wellenstein, H.F.; Bonham, R.A.

1975-01-01

The absolute generalized oscillator strength for the dipole forbidden quadrupole allowed Lyman--Birge--Hopfield band a 1 Pi/subg/ reverse arrow X 1 Σ + /subg/ in molecular nitrogen at an energy loss of 9.35 eV is observed by electron impact spectroscopy using 25 keV electrons over the momentum transfer range 0.04less than or equal toK 2 less than or equal to10 a.u. The results agree in the zero angle (zero momentum transfer) limit with the previous observations of Skerbele and Lassettre, but are in disagreement with previous theoretical and experimental results for K 2 >0.5. (auth)

Influence of linear-energy-dependent density of states on two-band superconductors: Three-square-well model approach

International Nuclear Information System (INIS)

Ogbuu, O.A.; Abah, O.C.; Asomba, G.C.; Okoye, C.M.I.

2011-01-01

We derived the transition temperature and the isotope exponent of two-band superconductor. We employed Bogoliubov-Valatin formalism assuming a three-square-well potential. The effect of linear-energy-dependent electronic DOS in superconductors is considered. The relevance of the studies to MgB 2 is analyzed. We have derived the expressions for the transition temperature and the isotope effect exponent within the framework of Bogoliubov-Valatin two-band formalism using a linear-energy-dependent electronic density of states assuming a three-square-well potentials model. Our results show that the approach could be used to account for a wide range of values of the transition temperature and isotope effect exponent. The relevance of the present calculations to MgB 2 is analyzed.

Fullerene-Free Organic Solar Cells with an Efficiency of 10.2% and an Energy Loss of 0.59 eV Based on a Thieno[3,4-c]Pyrrole-4,6-dione-Containing Wide Band Gap Polymer Donor.

Science.gov (United States)

Hadmojo, Wisnu Tantyo; Wibowo, Febrian Tri Adhi; Ryu, Du Yeol; Jung, In Hwan; Jang, Sung-Yeon

2017-09-27

Although the combination of wide band gap polymer donors and narrow band gap small-molecule acceptors achieved state-of-the-art performance as bulk heterojunction (BHJ) active layers for organic solar cells, there have been only several of the wide band gap polymers that actually realized high-efficiency devices over >10%. Herein, we developed high-efficiency, low-energy-loss fullerene-free organic solar cells using a weakly crystalline wide band gap polymer donor, PBDTTPD-HT, and a nonfullerene small-molecule acceptor, ITIC. The excessive intermolecular stacking of ITIC is efficiently suppressed by the miscibility with PBDTTPD-HT, which led to a well-balanced nanomorphology in the PBDTTPD-HT/ITIC BHJ active films. The favorable optical, electronic, and energetic properties of PBDTTPD-HT with respect to ITIC achieved panchromatic photon-to-current conversion with a remarkably low energy loss (0.59 eV).

Influence of high-energy milling on structure and microstructure of asbestos-cement materials

Science.gov (United States)

Iwaszko, Józef; Zawada, Anna; Lubas, Małgorzata

2018-03-01

Asbestos-Containing Waste (ACW) in the form of a fragment from an asbestos-cement board was subjected to high-energy milling in a planetary mill at a constant rotational speed of 650 rpm and for variable milling times: 1, 2, and 3 h. The initial and the milled materials were subjected to infrared spectroscopic examination to identify the asbestos variety and to evaluate changes in the structure caused by high-energy milling. FT-IR (Fourier Transform Infrared Spectroscopy) examinations followed optical microscopy and SEM (Scanning Electron Microscopy) studies as well as X-ray analysis of the phase composition. It was found that the asbestos fibres present in the asbestos-cement board were respirable fibres with pathogenic properties. Identifying asbestos using the spectroscopic method showed that chrysotile asbestos was present in the as-received ACW while no characteristics of absorption bands from crocidolite or amosite were found. The results of the spectroscopic examinations were confirmed by the X-ray phase analysis. During SEM investigations of the milled ACW, complete loss of the fibrous structure of chrysotile was observed. The FT-IR examinations of the milled material showed that with an increased milling time, the characteristic absorption bands characteristic for chrysotile diminished and already after 2 h of milling their almost complete decay was observed. Thereby, it was confirmed that high-energy milling results in destruction of the crystalline structure of the asbestos phase. The conducted studies have shown that the treatment of asbestos-cement materials using high-energy milling is an effective method for asbestos disposal, capable of competing with other technologies and solutions. Moreover, FT-IR spectroscopy was found to be useful to identify asbestos phases and to assess changes caused by high-energy milling.

Accurate Energy Consumption Modeling of IEEE 802.15.4e TSCH Using Dual-BandOpenMote Hardware.

Science.gov (United States)

Daneels, Glenn; Municio, Esteban; Van de Velde, Bruno; Ergeerts, Glenn; Weyn, Maarten; Latré, Steven; Famaey, Jeroen

2018-02-02

The Time-Slotted Channel Hopping (TSCH) mode of the IEEE 802.15.4e amendment aims to improve reliability and energy efficiency in industrial and other challenging Internet-of-Things (IoT) environments. This paper presents an accurate and up-to-date energy consumption model for devices using this IEEE 802.15.4e TSCH mode. The model identifies all network-related CPU and radio state changes, thus providing a precise representation of the device behavior and an accurate prediction of its energy consumption. Moreover, energy measurements were performed with a dual-band OpenMote device, running the OpenWSN firmware. This allows the model to be used for devices using 2.4 GHz, as well as 868 MHz. Using these measurements, several network simulations were conducted to observe the TSCH energy consumption effects in end-to-end communication for both frequency bands. Experimental verification of the model shows that it accurately models the consumption for all possible packet sizes and that the calculated consumption on average differs less than 3% from the measured consumption. This deviation includes measurement inaccuracies and the variations of the guard time. As such, the proposed model is very suitable for accurate energy consumption modeling of TSCH networks.

Investigation of an energy-gap model for photoacoustic O2A-band spectra: H2O calibration near 7180 cm−1

International Nuclear Information System (INIS)

Vess, E.M.; Anderson, C.N.; Awadalla, V.E.; Estes, E.J.; Jeon, C.; Wallace, C.J.; Hu, X.F.; Havey, D.K.

2012-01-01

Highlights: ► We investigate an energy transfer model for photoacoustic measurements of the O 2 A-band. ► We measure the response of a photoacoustic spectrometer for known quantities of H 2 O and O 2 . ► We fit multiple theoretical spectral line profiles to the data. ► We bind the relative uncertainty of the energy transfer model to less than 1%. ► We demonstrate that speed-dependence is an important line shape effect for these experiments. - Abstract: A photoacoustic spectrometer is used to evaluate the accuracy of an energy-gap model for collisional energy transfer. For photoacoustic measurements involving the b 1 Σ g + ←X 3 Σ g - transition of molecular oxygen the conversion of photon energy to thermal energy is inefficient and proceeds through the a 1 Δ g state. This results in attenuation of the photoacoustic signal. The magnitude of the attenuation can be predicted with an energy-gap model whose accuracy has been previously confirmed to within 3 ± 5%. However, this prior result does not rule out incomplete rotational relaxation of O 2 in the a 1 Δ g state. In this study, high-resolution spectra of H 2 O in air are used to calibrate the photoacoustic spectrometer. This work binds the relative uncertainty in the energy-gap relaxation factor for O 2 A-band photoacoustic signals to be approximately 1%. During one acoustic cycle, this result implies negligible collisional relaxation to the X 3 Σ g - state of O 2 and nearly complete collisional relaxation to the a 1 Δ g state.

Electronic structure and optical properties of AIN under high pressure

International Nuclear Information System (INIS)

Li Zetao; Dang Suihu; Li Chunxia

2011-01-01

We have calculated the electronic structure and optical properties of Wurtzite structure AIN under different high pressure with generalized gradient approximation (GGA) in this paper. The total energy, density of state, energy band structure and optical absorption and reflection properties under high pressure are calculated. By comparing the changes of the energy band structure, we obtained AIN phase transition pressure for 16.7 GPa, which is a direct band structure transforming to an indirect band structure. Meanwhile, according to the density of states distribution and energy band structure, we analyzed the optical properties of AIN under high-pressure, the results showed that the absorption spectra moved from low-energy to high-energy. (authors)

First high resolution analysis of the 3ν2 and 3ν2 -ν2 bands of 32S16O2

Science.gov (United States)

Ulenikov, O. N.; Bekhtereva, E. S.; Gromova, O. V.; Berezkin, K. B.; Horneman, V.-M.; Sydow, C.; Maul, C.; Bauerecker, S.

2017-11-01

The second bending overtone band 3ν2 of sulfur dioxide has been studied for the first time with high resolution rotation-vibration spectroscopy. The 1530 transitions involving 728 upper state energy levels with Jmax.= 53 and Kamax . = 15 have been assigned to the 3ν2 band. The 746 transitions belonging to the 3ν2 -ν2 "hot" band have been also assigned in the region of 950-1100 cm-1. For the analysis of the assigned transitions, an effective Hamiltonian of an isolated (030) vibrational state (the Watson operator in A-reduction and Ir representation) was used. Set of 9 varied parameters was determined which reproduce the initial experimental data with the drms deviations of 9.0 ×10-4 cm-1 and 9.8 ×10-4 cm-1 for the 3ν2 and 3ν2 -ν2 bands, which are comparable with the experimental uncertainties.

Performance of high-temperature superconducting band-pass filters with high selectivity for base transceiver applications of digital cellular communication systems

Science.gov (United States)

Kwak, J. S.; Lee, J. H.; Kim, C. O.; Hong, J. P.; Han, S. K.; Char, K.

2002-07-01

Highly selective high-temperature superconducting band-pass filters based on spiral meander line structures have been developed for base transceiver station applications of digital cellular communication systems. The filter comprised 12-pole microstrip line resonators with a circuit size of 0.5 × 17 × 41 mm3. The filter was designed to have a bandwidth of 25 MHz at a centre frequency of 834 MHz. Particularly, the physical size of each resonator was chosen not only to reduce far-field radiation, but also to have reasonable tunability in the filter. Device characteristics exhibited a low insertion loss of 0.4 dB with a 0.2 dB ripple and a return loss better than 10 dB in the pass-band at 65 K. The out-of-band signals were attenuated better than 60 dB at about 3.5 MHz from the lower band edge, and 3.8 MHz from the higher band edge.

Performance of high-temperature superconducting band-pass filters with high selectivity for base transceiver applications of digital cellular communication systems

Energy Technology Data Exchange (ETDEWEB)

Kwak, J.S.; Lee, J.H.; Kim, C.O.; Hong, J.P. [Department of Physics, Hanyang University, Seoul (Korea, Republic of); Han, S.K.; Char, K. [RFtron Inc., Seoul (Korea, Republic of)

2002-07-01

Highly selective high-temperature superconducting band-pass filters based on spiral meander line structures have been developed for base transceiver station applications of digital cellular communication systems. The filter comprised 12-pole microstrip line resonators with a circuit size of 0.5x17x41 mm{sup 3}. The filter was designed to have a bandwidth of 25 MHz at a centre frequency of 834 MHz. Particularly, the physical size of each resonator was chosen not only to reduce far-field radiation, but also to have reasonable tunability in the filter. Device characteristics exhibited a low insertion loss of 0.4 dB with a 0.2 dB ripple and a return loss better than 10 dB in the pass-band at 65 K. The out-of-band signals were attenuated better than 60 dB at about 3.5 MHz from the lower band edge, and 3.8 MHz from the higher band edge. (author)

Performance of high-temperature superconducting band-pass filters with high selectivity for base transceiver applications of digital cellular communication systems

International Nuclear Information System (INIS)

Kwak, J.S.; Lee, J.H.; Kim, C.O.; Hong, J.P.; Han, S.K.; Char, K.

2002-01-01

Highly selective high-temperature superconducting band-pass filters based on spiral meander line structures have been developed for base transceiver station applications of digital cellular communication systems. The filter comprised 12-pole microstrip line resonators with a circuit size of 0.5x17x41 mm 3 . The filter was designed to have a bandwidth of 25 MHz at a centre frequency of 834 MHz. Particularly, the physical size of each resonator was chosen not only to reduce far-field radiation, but also to have reasonable tunability in the filter. Device characteristics exhibited a low insertion loss of 0.4 dB with a 0.2 dB ripple and a return loss better than 10 dB in the pass-band at 65 K. The out-of-band signals were attenuated better than 60 dB at about 3.5 MHz from the lower band edge, and 3.8 MHz from the higher band edge. (author)

Ocean dynamic noise energy flux directivity in the 400 Hz to 700 Hz frequency band

Institute of Scientific and Technical Information of China (English)

Vladimir A. Shchurov; Galina F. Ivanova; Marianna V. Kuyanova; Helen S. Tkachenko

2007-01-01

Results of field studies of underwater dynamic noise energy flux directivity at two wind speeds, 6 m/s and 12 m/s, in the 400 Hz to 700 Hz frequency band in the deep open ocean are presented. The measurements were made by a freely drifting telemetric combined system at 500 m depth. Statistical characteristics of the horizontal and vertical dynamic noise energy flux directivity are considered as functions of wind speed and direction. Correlation between the horizontal dynamic noise energy flux direction and that of the wind was determined; a mechanism of the horizontal dynamic noise energy flux generation is related to the initial noise field scattering on ocean surface waves.

High-pulse energy supercontinuum laser for high-resolution spectroscopic photoacoustic imaging of lipids in the 1650-1850 nm region.

Science.gov (United States)

Dasa, Manoj Kumar; Markos, Christos; Maria, Michael; Petersen, Christian R; Moselund, Peter M; Bang, Ole

2018-04-01

We propose a cost-effective high-pulse energy supercontinuum (SC) source based on a telecom range diode laser-based amplifier and a few meters of standard single-mode optical fiber, with a pulse energy density as high as ~25 nJ/nm in the 1650-1850 nm regime (factor >3 times higher than any SC source ever used in this wavelength range). We demonstrate how such an SC source combined with a tunable filter allows high-resolution spectroscopic photoacoustic imaging and the spectroscopy of lipids in the first overtone transition band of C-H bonds (1650-1850 nm). We show the successful discrimination of two different lipids (cholesterol and lipid in adipose tissue) and the photoacoustic cross-sectional scan of lipid-rich adipose tissue at three different locations. The proposed high-pulse energy SC laser paves a new direction towards compact, broadband and cost-effective source for spectroscopic photoacoustic imaging.

A high-gain high-power L-band antenna for field test applications

Science.gov (United States)

Abe, David K.; Tran, George T.; Knop, C. M.

1995-09-01

A high-gain, prime-focus parabolic dish antenna system was designed and constructed for experimental use in the field. The antenna was designed to radiate in L-band at peak power levels exceeding 1 X 106 watts. A 3.6 m diameter, commercial off-the-shelf parabolic dish antenna was modified with a custom-designed waveguide horn feed. The system was mounted on an antenna pedestal to allow for fine (approximately 0.001 degrees) elevation and azimuth control; the antenna and pedestal were mounted on a 4.3 m long trailer for mobility in the field. The antenna has a measured gain of 32 dBi and a 3-dB beamwidth of approximately 4.5 degrees. The system was successfully operated in the field in L-band at peak power levels exceeding 5 MW. The design, calibration, and testing of the antenna system will be presented.

Positron and electron energy bands in several ionic crystals using restricted Hartree-Fock method

Science.gov (United States)

Kunz, A. B.; Waber, J. T.

1981-08-01

Using a restricted Hartree-Fock formalism and suitably localized and symmetrized wave functions, both the positron and electron energy bands were calculated for NaF, MgO and NiO. The lowest positron state at Γ 1 lies above the vacuum level and negative work functions are predicted. Positron annihilation rates were calculated and found to be in good agreement with measured lifetimes.

Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

International Nuclear Information System (INIS)

Miedema, P.S.; Beye, M.; Könnecke, R.; Schiwietz, G.; Föhlisch, A.

2014-01-01

Highlights: • Conduction band minima (CBM) of 6H-SiC are estimated with Si 2p XAS. • Valence band maxima (VBM) of 6H-SiC are estimated with non-resonant Si 2p XES. • Temperature-dependent VBM and CBM of 6H-SiC show asymmetric band gap closing. • XAS, XES and RIXS band gap estimates are compared with the optical band gap. • XAS + XES versus optical band gap provides core-excitonic screening energies. - Abstract: The band gap of semiconductors like silicon and silicon carbide (SiC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45 × 10 −4 eV/K and a conduction-band slope of −1.334 × 10 −4 eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and non-resonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range

Impact ionisation rate calculations in wide band gap semiconductors

International Nuclear Information System (INIS)

Harrison, D.

1998-09-01

Calculations of band-to-band impact ionisation rates performed in the semi-classical Fermi's Golden Rule approximation are presented here for the semiconductors GaAs, In 0.53 Ga 0.47 As and Si 0.5 Ge 0.5 at 300K. The crystal band structure is calculated using the empirical pseudopotential method. To increase the speed with which band structure data at arbitrary k-vectors can be obtained, an interpolation scheme has been developed. Energies are quadratically interpolated on adapted meshes designed to ensure accuracy is uniform throughout the Brillouin zone, and pseudowavefunctions are quadratically interpolated on a regular mesh. Matrix elements are calculated from the pseudowavefunctions, and include the terms commonly neglected in calculations for narrow band gap materials and an isotropic approximation to the full wavevector and frequency dependent dielectric function. The numerical integration of the rate over all distinct energy and wavevector conserving transitions is performed using two different algorithms. Results from each are compared and found to be in good agreement, indicating that the algorithms are reliable. The rates for electrons and holes in each material are calculated as functions of the k-vector of the impacting carriers, and found to be highly anisotropic. Average rates for impacting carriers at a given energy are calculated and fitted to Keldysh-type expressions with higher than quadratic dependence of the rate on energy above threshold being obtained in all cases. The average rates calculated here are compared to results obtained by other workers, with reasonable agreement being obtained for GaAs, and poorer agreement obtained for InGaAs and SiGe. Possible reasons for the disagreement are investigated. The impact ionisation thresholds are examined and k-space and energy distributions of generated carriers are determined. The role of threshold anisotropy, variation in the matrix elements and the shape of the bands in determining

B(M1) values in the band-crossing of shears bands in 197Pb

Science.gov (United States)

Krücken, R.; Cooper, J. R.; Beausang, C. W.; Novak, J. R.; Dewald, A.; Klug, T.; Kemper, G.; von Brentano, P.; Carpenter, M.; Wiedenhöver, I.

We present details of the band crossing mechanism of shears bands using the example of 197Pb. Absolute reduced matrix elements B(M1) were determined by means of a RDM lifetime measurement in one of the shears bands in 197Pb. The experiment was performed using the New Yale Plunger Device (NYPD) in conjunction with the Gammasphere array. Band mixing calculations on the basis of the semi-classical model of the shears mechanism are used to describe the transition matrix elements B(M1) and energies throughout the band-crossing regions. Good agreement with the data was obtained and the detailed composition of the states in the shears band are discussed.

Evidence for dipolar bands in mercury isotopes using EUROGAM multi-detector

International Nuclear Information System (INIS)

Le Coz, Y.

1995-01-01

This thesis is devoted to the study of nuclear structure around mass A 190 and in particular, to the search of oblate rotational dipole bands in mercury isotopes. The reactions used to populate high spin states in 192 Hg and 193 Hg were 160 Gd ( 36 S,n) 192 Hg and 150 Nd( 48 Ca, 5n) 193 Hg at beam energies of 159 and 213 MeV. Gamma-rays have been detected using the EUROGAM phase I array. Level schemes of those two nuclei have been extended up to an excitation energy of about 10 MeV and approximately spin 35h. In 192 Hg, two new dipole bands have been observed. Those two structures, as well as two similar structures in 193 Hg, have been connected to the low-lying states; so, excitation energy and bandhead spin of those bands have been deduced. Angular distribution and correlation analysis (specific to EUROGRAM phase I) have confirmed that the transitions are dipoles. After a general presentation of dipole bands in this A = 190 mass region, experimental results are compared with mean-field Hartree-Fock + BCS calculations, using the rotor plus quasi-particles model. The results are consistent with weakly oblate structures based on configurations which involve high-K proton orbitals driving the nucleus to an oblate shape. (author). 81 refs., 47 figs., 8 tabs., 4 ann

Defects in CdSe thin films, induced by high energy electron irradiation

International Nuclear Information System (INIS)

Ion, L.; Antohe, S.; Tutuc, D.; Antohe, V.A.; Tazlaoanu, C.

2004-01-01

Defects induced in CdSe thin films by high energy electron irradiation are investigated by means of thermally stimulated currents (TSC) spectroscopy. Films were obtained by vacuum deposition from a single source and irradiated with a 5 x 10 13 electrons/cm 2 s -1 beam of 6-MeV energy. It was found that electrical properties of the films are controlled by a deep donor state, located at 0.38 eV below the bottom edge of the conduction band. Parameters of the traps responsible for the recorded TSC peaks were determined. (authors)

S-band 45 MW peak power test facility at RRCAT

International Nuclear Information System (INIS)

Wanmode, A. Yashwant; Reddy, Sivananda; Mulchandani, J.; Mohania, Praveen; Shrivastava, B. Purushottam

2015-01-01

RRCAT is engaged in the design and development of high energy electron LINAC as future injectors for the Booster Synchrotron for Indus-1 and Indus-2 SRS. The high energy LINAC will need microwave power over 30 MW depending on the number of structures to be energized. In order to have advance preparations for this development a 45 MW S-Band test facility has been designed and developed at RRCAT. The test stand is built around a 45 MW peak power S-band pulsed klystron, A conventional pulse forming network based modulator for klystron has been designed and developed. The WR-284 waveguide transmission system consisting of dual directional couplers, SF 6 gas pressurization unit, high power waveguide load and arc sensor has been developed and interfaced with the klystron. The klystron has been successfully tested up to 30 MW peak power at 2856 MHz on SF 6 pressurized waveguide line. A solid state S Band driver amplifier up to 1 kW output power was designed developed for driving the klystron. This paper describes the results of 30 MW peak power test of this facility. (author)

Reducing support loss in micromechanical ring resonators using phononic band-gap structures

Energy Technology Data Exchange (ETDEWEB)

Hsu, Feng-Chia; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin [Industrial Technology Research Institute-South, Tainan 709, Taiwan (China); Hsu, Jin-Chen, E-mail: fengchiahsu@itri.org.t, E-mail: hsujc@yuntech.edu.t [Department of Mechanical Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 64002, Taiwan (China)

2011-09-21

In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.

Reducing support loss in micromechanical ring resonators using phononic band-gap structures

International Nuclear Information System (INIS)

Hsu, Feng-Chia; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin; Hsu, Jin-Chen

2011-01-01

In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.

New high spin states and band termination in {sup 83}Y and {sup 84}Zr

Energy Technology Data Exchange (ETDEWEB)

Johnson, T.D.; Aprahamian, A. [University of Notre Dame, Notre Dame, Indiana 46556 (United States); Lister, C.J.; Blumenthal, D.J.; Crowell, B. [Argonne National Laboratory, Argonne, Illinois 60439 (United States); Chowdhury, P. [University of Massachusetts, Lowell, Massachusetts 01854 (United States); Fallon, P.; Machiavelli, A.O. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

1997-03-01

The gamma decay of high spin yrast states in {sup 83}Y up to I{sup {pi}}=59/2{sup +} and 53/2{sup {minus}} have been observed using the reaction {sup 58}Ni({sup 29}Si,3p) at 110 MeV and the Gammasphere Early Implementation Array. The level scheme has been substantially extended due to the observations of several new transitions in all of the bands. A sequence of transitions feeding into the positive parity yrast band above I{sup {pi}}=47/2{sup +} seems to be consistent with a noncollective oblate structure expected at these high spins. A similar cascade is found in the data for {sup 84}Zr. A new forking of the favored negative parity band is found which may be due to neutron alignment polarizing the core to a different shape. This suggests that the {open_quotes}isomeric{close_quote}{close_quote} band in {sup 83}Y, for which one more connecting transition was found, is of a similar nature to other high-K bands found in this region. Lifetime measurements in the unfavored negative parity band are consistent with cranking calculations which predict a nearly oblate shape with a deformation parameter {beta}{sub 2}{approx}0.2. A qualitative analysis of line shapes at very high spins suggests the persistence of collectivity in the yrast sequence to the highest excitations seen. {copyright} {ital 1997} {ital The American Physical Society}

Anomalies in the 1D Anderson model: Beyond the band-centre and band-edge cases

Science.gov (United States)

Tessieri, L.; Izrailev, F. M.

2018-03-01

We consider the one-dimensional Anderson model with weak disorder. Using the Hamiltonian map approach, we analyse the validity of the random-phase approximation for resonant values of the energy, E = 2 cos(πr) , with r a rational number. We expand the invariant measure of the phase variable in powers of the disorder strength and we show that, contrary to what happens at the centre and at the edges of the band, for all other resonant energies the leading term of the invariant measure is uniform. When higher-order terms are taken into account, a modulation of the invariant measure appears for all resonant values of the energy. This implies that, when the localisation length is computed within the second-order approximation in the disorder strength, the Thouless formula is valid everywhere except at the band centre and at the band edges.

Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

Directory of Open Access Journals (Sweden)

K. Collar

2017-07-01

Full Text Available We investigate the change of the valence band energy of GaAs1-xBix (0band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that ∼75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.

High Efficiency Ka-Band Spatial Combiner

Directory of Open Access Journals (Sweden)

D. Passi

2014-12-01

Full Text Available A Ka-Band, High Efficiency, Small Size Spatial Combiner (SPC is proposed in this paper, which uses an innovatively matched quadruple Fin Lines to microstrip (FLuS transitions. At the date of this paper and at the Author's best knowledge no such FLuS innovative transitions have been reported in literature before. These transitions are inserted into a WR28 waveguide T-junction, in order to allow the integration of 16 Monolithic Microwave Integrated Circuit (MMIC Solid State Power Amplifiers (SSPA's. A computational electromagnetic model using the finite elements method has been implemented. A mean insertion loss of 2 dB is achieved with a return loss better the 10 dB in the 31-37 GHz bandwidth.

Ultraviolet photoelectron spectroscopy reveals energy-band dispersion for π-stacked 7,8,15,16-tetraazaterrylene thin films in a donor–acceptor bulk heterojunction

Science.gov (United States)

Aghdassi, Nabi; Wang, Qi; Ji, Ru-Ru; Wang, Bin; Fan, Jian; Duhm, Steffen

2018-05-01

7,8,15,16-tetraazaterrylene (TAT) thin films grown on highly oriented pyrolytic graphite (HOPG) substrates were studied extensively with regard to their intrinsic and interfacial electronic properties by means of ultraviolet photoelectron spectroscopy (UPS). Merely weak substrate–adsorbate interaction occurs at the TAT/HOPG interface, with interface energetics being only little affected by the nominal film thickness. Photon energy-dependent UPS performed perpendicular to the molecular planes of TAT multilayer films at room temperature clearly reveals band-like intermolecular dispersion of the TAT highest occupied molecular orbital (HOMO) energy. Based on a comparison with a tight-binding model, a relatively narrow bandwidth of 54 meV is derived, which points to the presence of an intermediate regime between hopping and band-like hole transport. Upon additional deposition of 2,2‧:5‧,2″:5″,2″‧-quaterthiophene (4T), a 4T:TAT donor–acceptor bulk heterojunction with a considerable HOMO-level offset at the donor–acceptor interface is formed. The 4T:TAT bulk heterojunction likewise exhibits intermolecular dispersion of the TAT HOMO energy, yet with a significant decreased bandwidth.

Energy shift and conduction-to-valence band transition mediated by a time-dependent potential barrier in graphene

Science.gov (United States)

Chaves, Andrey; da Costa, D. R.; de Sousa, G. O.; Pereira, J. M.; Farias, G. A.

2015-09-01

We investigate the scattering of a wave packet describing low-energy electrons in graphene by a time-dependent finite-step potential barrier. Our results demonstrate that, after Klein tunneling through the barrier, the electron acquires an extra energy which depends on the rate of change of the barrier height with time. If this rate is negative, the electron loses energy and ends up as a valence band state after leaving the barrier, which effectively behaves as a positively charged quasiparticle.

Experimental verificatio of load resistance switching for global stabilization of high-energy response of a nonlinear wideband electromagnetic vibration energy harvester

International Nuclear Information System (INIS)

Sato, T; Masuda, A; Sanada, T

2015-01-01

This paper presents an experimental verification of a self-excitation control of a resonance- type vibration energy harvester with a Duffing-type nonlinearity which is designed to perform effectively in a wide frequency range. For the conventional linear vibration energy harvester, the performance of the power generation at the resonance frequency and the bandwidth of the resonance peak are trade-off. The resonance frequency band can be expanded by introducing a Duffing-type nonlinear oscillator in order to enable the harvester to generate larger electric power in a wider frequency range. However, since such nonlinear oscillator can have multiple stable steady-state solutions in the resonance band, it is difficult for the nonlinear harvester to maintain the high performance of the power generation constantly. The principle of self-excitation and entrainment has been utilized to provide the global stability to the highest-energy solution by destabilizing other unexpected lower-energy solutions by introducing a switching circuit of the load resistance between positive and the negative values depending on the response amplitude of the oscillator. It has been experimentally validated that this control law imparts the self-excitation capability to the oscillator to show an entrainment into the highest-energy solution. (paper)

Forbidden energy band gap in diluted a-Ge1−xSix:N films

International Nuclear Information System (INIS)

Guarneros, C.; Rebollo-Plata, B.; Lozada-Morales, R.; Espinosa-Rosales, J.E.; Portillo-Moreno, J.; Zelaya-Angel, O.

2012-01-01

By means of electron gun evaporation Ge 1−x Si x :N thin films, in the entire range 0 ≤ x ≤ 1, were prepared on Si (100) and glass substrates. The initial vacuum reached was 6.6 × 10 −4 Pa, then a pressure of 2.7 × 10 −2 Pa of high purity N 2 was introduced into the chamber. The deposition time was 4 min. Crucible-substrate distance was 18 cm. X-ray diffraction patterns indicate that all the films were amorphous (a-Ge 1−x Si x :N). The nitrogen concentration was of the order of 1 at% for all the films. From optical absorption spectra data and by using the Tauc method the energy band gap (E g ) was calculated. The Raman spectra only reveal the presence of Si-Si, Ge-Ge, and Si-Ge bonds. Nevertheless, infrared spectra demonstrate the existence of Si-N and Ge-N bonds. The forbidden energy band gap (E g ) as a function of x in the entire range 0 ≤ x ≤ 1 shows two well defined regions: 0 ≤ x ≤ 0.67 and 0.67 ≤ x ≤ 1, due to two different behaviors of the band gap, where for x > 0.67 exists an abruptly change of E g (x). In this case E g (x) versus x is different to the variation of E g in a-Ge 1−x Si x and a-Ge 1−x Si x :H. This fact can be related to the formation of Ge 3 N 4 and GeSi 2 N 4 when x ≤ 0.67, and to the formation of Si 3 N 4 and GeSi 2 N 4 for 0.67 ≤ x. - Highlights: ► Nitrogen doped amorphous Ge 1-x Si x thin films are grown by electron gun technique. ► Nitrogen atoms on E g of the a-Ge 1-x Si x films in the 0 £ x £ 1 range are analyzed. ► Variation in 0 £ x £ 1 range shows a warped change of E g in 1.0 – 3.6 eV range. ► The change in E g (x) behavior when x ∼ 0.67 was associated with Ge 2 SiN 4 presence.

Conduction bands and invariant energy gaps in alkali bromides

NARCIS (Netherlands)

Boer, P.K. de; Groot, R.A. de

1998-01-01

Electronic structure calculations of the alkali bromides LiBr, NaBr, KBr, RbBr and CsBr are reported. It is shown that the conduction band has primarily bromine character. The size of the band gaps of bromides and alkali halides in general is reinterpreted.

Mars Global Surveyor Ka-Band Frequency Data Analysis

Science.gov (United States)

Morabito, D.; Butman, S.; Shambayati, S.

2000-01-01

The Mars Global Surveyor (MGS) spacecraft, launched on November 7, 1996, carries an experimental space-to-ground telecommunications link at Ka-band (32 GHz) along with the primary X-band (8.4 GHz) downlink. The signals are simultaneously transmitted from a 1.5-in diameter parabolic high gain antenna (HGA) on MGS and received by a beam-waveguide (BWG) R&D 34-meter antenna located in NASA's Goldstone Deep Space Network (DSN) complex near Barstow, California. The projected 5-dB link advantage of Ka-band relative to X-band was confirmed in previous reports using measurements of MGS signal strength data acquired during the first two years of the link experiment from December 1996 to December 1998. Analysis of X-band and Ka-band frequency data and difference frequency (fx-fka)/3.8 data will be presented here. On board the spacecraft, a low-power sample of the X-band downlink from the transponder is upconverted to 32 GHz, the Ka-band frequency, amplified to I-W using a Solid State Power Amplifier, and radiated from the dual X/Ka HGA. The X-band signal is amplified by one of two 25 W TWTAs. An upconverter first downconverts the 8.42 GHz X-band signal to 8 GHz and then multiplies using a X4 multiplier producing the 32 GHz Ka-band frequency. The frequency source selection is performed by an RF switch which can be commanded to select a VCO (Voltage Controlled Oscillator) or USO (Ultra-Stable Oscillator) reference. The Ka-band frequency can be either coherent with the X-band downlink reference or a hybrid combination of the USO and VCO derived frequencies. The data in this study were chosen such that the Ka-band signal is purely coherent with the X-band signal, that is the downconverter is driven by the same frequency source as the X-band downlink). The ground station used to acquire the data is DSS-13, a 34-meter BWG antenna which incorporates a series of mirrors inside beam waveguide tubes which guide the energy to a subterranean pedestal room, providing a stable environment

High-Strain Rate Failure Modeling Incorporating Shear Banding and Fracture

Science.gov (United States)

2017-11-22

High Strain Rate Failure Modeling Incorporating Shear Banding and Fracture The views, opinions and/or findings contained in this report are those of...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6. AUTHORS...Report as of 05-Dec-2017 Agreement Number: W911NF-13-1-0238 Organization: Columbia University Title: High Strain Rate Failure Modeling Incorporating

Band structure and optical properties of highly anisotropic LiBa2[B10O16(OH)3] decaborate crystal

International Nuclear Information System (INIS)

Smok, P.; Kityk, I.V.; Berdowski, J.

2003-01-01

The band structure (BS), charge density distribution and linear-optical properties of the anisotropic crystal LiBa 2 [B 10 O 16 (OH) 3 ] (LBBOH) are calculated using a self-consistent norm-conserving pseudopotential method within the framework of the local-density approximation theory. A high anisotropy of the band energy gap (4.22 eV for the E parallel b, 4.46 eV for the E parallel c) and giant birefringence (up to 0.20) are found. Comparison of the theoretically calculated and the experimentally measured polarised spectra of the imaginary part of the dielectric susceptibility ε 2 shows a good agreement. The anisotropy of the charge density distribution, BS dispersion and of the optical spectra originate from anisotropy between the 2p z B-2p z O and 2p y,x B-2p y,y O bonding orbitals. The observed anisotropy in the LBBOH is principally different from that of β-BaB 2 O 4 (BBO) single crystals. In the LBBOH single crystals the anisotropy of optical and charge density distribution is caused by different projection of the orbitals originating from particular borate clusters on the particular crystallographic axes, contrary to the BBO, where the anisotropy is caused prevailingly by a different local site symmetry of oxygen within the borate planes. The observed anisotropy is analysed in terms of the band energy dispersion and space charge density distribution

Tunneling emission of electrons from semiconductors' valence bands in high electric fields

International Nuclear Information System (INIS)

Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

2006-01-01

Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

MMIC for High-Efficiency Ka-BAnd GaN Power Amplifiers (2007043), Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This proposal addresses the need for high-efficiency, high-output power amplifiers operating in the Ka-band frequencies. For space communications, the power...

Photoelectrochemical properties and band structure of oxide films on zirconium-transition metal alloys

International Nuclear Information System (INIS)

Takahashi, Kazuo; Uno, Masayoshi; Okui, Mihoko; Yamanaka, Shinsuke

2006-01-01

The microalloying effects of 4d and 5d transition metals, M (M: Nb, Mo, Ta, W) on the photoelectrochemical properties, the flat band potential (U fb ) and the band gap energy (E g ), for zirconium oxide films were investigated by photoelectrochemical measurements and band calculation. Button ingots of zirconium-5 mol% M (M: Nb, Mo, Ta, W) were made from high-purity metals (99.9% purity) by arc melting in a purified argon atmosphere. These plate specimens were sealed into silica tubes in vacuum, and then homogenized at 1273 K for 24 h. Subsequently, these specimens were oxidized up to 1173 K. The photocurrent of each specimen was evaluated at room temperature under the irradiation of Xe lamp (500 W) through grating monochrometer and cut-off filter. 0.1 M Na 2 SO 4 solution was used as the electrolyte. The value of the flat band potential was higher and the value of the band gap energy was smaller than that of pure zirconium oxide film in all sample. It was found from the calculation by CASTEP code that the decreases in band gap energy of these oxide films was due to formation of 4d or 5d orbital of transition metals

FERMI OBSERVATIONS OF HIGH-ENERGY GAMMA-RAY EMISSION FROM GRB 090217A

International Nuclear Information System (INIS)

Ackermann, M.; Ajello, M.; Bechtol, K.; Berenji, B.; Blandford, R. D.; Borgland, A. W.; Bouvier, A.; Baldini, L.; Bellazzini, R.; Bregeon, J.; Brez, A.; Ballet, J.; Barbiellini, G.; Baring, M. G.; Bastieri, D.; Bhat, P. N.; Briggs, M. S.; Bissaldi, E.; Bonamente, E.; Brigida, M.

2010-01-01

The Fermi observatory is advancing our knowledge of gamma-ray bursts (GRBs) through pioneering observations at high energies, covering more than seven decades in energy with the two on-board detectors, the Large Area Telescope (LAT) and the Gamma-ray Burst Monitor (GBM). Here, we report on the observation of the long GRB 090217A which triggered the GBM and has been detected by the LAT with a significance greater than 9σ. We present the GBM and LAT observations and on-ground analyses, including the time-resolved spectra and the study of the temporal profile from 8 keV up to ∼1 GeV. All spectra are well reproduced by a Band model. We compare these observations to the first two LAT-detected, long bursts GRB 080825C and GRB 080916C. These bursts were found to have time-dependent spectra and exhibited a delayed onset of the high-energy emission, which are not observed in the case of GRB 090217A. We discuss some theoretical implications for the high-energy emission of GRBs.

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS_{2}.

Science.gov (United States)

Yao, Kaiyuan; Yan, Aiming; Kahn, Salman; Suslu, Aslihan; Liang, Yufeng; Barnard, Edward S; Tongay, Sefaattin; Zettl, Alex; Borys, Nicholas J; Schuck, P James

2017-08-25

Optoelectronic excitations in monolayer MoS_{2} manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena-critical to both many-body physics exploration and device applications-presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in two-dimensional semiconductors.

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS2

Science.gov (United States)

Yao, Kaiyuan; Yan, Aiming; Kahn, Salman; Suslu, Aslihan; Liang, Yufeng; Barnard, Edward S.; Tongay, Sefaattin; Zettl, Alex; Borys, Nicholas J.; Schuck, P. James

2017-08-01

Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena—critical to both many-body physics exploration and device applications—presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in two-dimensional semiconductors.

Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors

Science.gov (United States)

Kadashchuk, Andrey; Tong, Fei; Janneck, Robby; Fishchuk, Ivan I.; Mityashin, Alexander; Pavlica, Egon; Köhler, Anna; Heremans, Paul; Rolin, Cedric; Bratina, Gvido; Genoe, Jan

2017-09-01

We demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors.

High power tests of X-band RF windows at KEK

Energy Technology Data Exchange (ETDEWEB)

Otake, Yuji [Earthquake Research Inst., Tokyo Univ., Tokyo (Japan); Tokumoto, Shuichi; Kazakov, Sergei Yu.; Odagiri, Junichi; Mizuno, Hajime

1997-04-01

Various RF windows comprising a short pill-box, a long pill-box, a TW (traveling wave)-mode and three TE11-mode horn types have been developed for an X-band high-power pulse klystron with two output windows for JLC (Japan Linear Collider). The output RF power of the klystron is designed to be 130 MW with the 800 ns pulse duration. Since this X-band klystron has two output windows, the maximum RF power of the window must be over 85 MW. The design principle for the windows is to reduce the RF-power density and/or the electric-field strength at the ceramic part compared with that of an ordinary pill-box-type window. Their reduction is effective to increase the handling RF power of the window. To confirm that the difference among the electric-field strengths depends on their RF structures, High-power tests of the above-mentioned windows were successfully carried out using a traveling-wave resonator (TWR) for the horns and the TW-mode type and, installing them directly to klystron output waveguides for the short and long pill-box type. Based upon the operation experience of S-band windows, two kinds of ceramic materials were used for these tests. The TE11-mode 1/2{lambda}g-1 window was tested up to the RF peak-power of 84 MW with the 700 ns pulse duration in the TWR. (J.P.N)

Decay of superdeformed bands

International Nuclear Information System (INIS)

Carpenter, M.P.; Khoo, T.L.; Lauritsen, T.

1995-01-01

One of the major challenges in the study of superdeformation is to directly connect the large number of superdeformed bands now known to the yrast states. In this way, excitation energies, spins and parities can be assigned to the levels in the second well which is essential to establish the collective and single-particle components of these bands. This paper will review some of the progress which has been made to understand the decay of superdeformed bands using the new arrays including the measurement of the total decay spectrum and the establishment of direct one-step decays from the superdeformed band to the yrast line in 194 Hg. 42 refs., 5 figs

An S-band high gain relativistic klystron amplifier with high phase stability

Energy Technology Data Exchange (ETDEWEB)

Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Li, Z. H.; Xu, Z.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China)

2014-11-15

For the purpose of coherent high power microwave combining, an S-band high gain relativistic klystron amplifier with high phase stability is presented and studied. By the aid of 3D particle-in-cell code and circuit simulation software, the mechanism of parasitic oscillation in the device is investigated. And the RF lossy material is adopted in the simulation and experiment to suppress the oscillation. The experimental results show that with an input RF power of 10 kW, a microwave pulse with power of 1.8 GW is generated with a gain of 52.6 dB. And the relative phase difference fluctuation between output microwave and input RF signal is less than ±10° in 90 ns.

Surface band structures on Nb(001)

International Nuclear Information System (INIS)

Fang, B.; Lo, W.; Chien, T.; Leung, T.C.; Lue, C.Y.; Chan, C.T.; Ho, K.M.

1994-01-01

We report the joint studies of experimental and theoretical surface band structures of Nb(001). Angle-resolved photoelectron spectroscopy was used to determine surface-state dispersions along three high-symmetry axes bar Γ bar M, bar Γ bar X, and bar M bar X in the surface Brillouin zone. Ten surface bands have been identified. The experimental data are compared to self-consistent pseudopotential calculations for the 11-layer Nb(001) slabs that are either bulk terminated or fully relaxed (with a 12% contraction for the first interlayer spacing). The band calculations for a 12% surface-contracted slab are in better agreement with the experimental results than those for a bulk-terminated slab, except for a surface resonance near the Fermi level, which is related to the spin-orbit interaction. The charge profiles for all surface states or resonances have been calculated. Surface contraction effects on the charge-density distribution and the energy position of surface states and resonances will also be discussed

Investigation of Substrates and Mounting Techniques for the High Energy Focusing Telescope (HEFT)

DEFF Research Database (Denmark)

Hailey, Charles J.; Abdali, Salim; Christensen, Finn Erland

1997-01-01

The High Energy Focusing Telescope (HEFT) is a balloon-borne system for obtaining arcminute imagery in the 20-100 keV energy band. The hard X-ray optics are baselined to use thin epoxy-replicated aluminum foil substrates coated with graded-d multilayers, and we show some results on X-ray performa...... is a better substrate due to its superior hard X-ray reflectivity and scattering properties in comparison to similarly coated epoxyreplicated aluminum foil. We also discuss some preliminary work on the HEFT mirror mounting concept and the associated angular resolution error budget....

The High Energy Photons Emission from Solar Flares Observed by SZ2-XD

Science.gov (United States)

Wang, Huanyu; Li, Xinqiao; Ma, Yuqian; Zhang, Chengmo; Xu, Yupeng; Wang, Jingzhou; Chen, Guoming

The spectra and light curve of near a hundred Solar X-ray Flare events, which were observed by SZ2/XD in the energy band of 10-800 keV during 2001, have been investigated. The events covered from C to X-class flares, which are shown different characters of high energy photons emission. The results will be presented in this paper. The discussions will be made especially for 3 of the brightest X-class solar flares SF010402(X20),SF010406(X5.6) and SF010415 (X14.4, a GLE event).

Role of Electronic Structure In Ion Band State Theory of Low Energy Nuclear Reactions

Science.gov (United States)

Chubb, Scott

2004-03-01

The Nuts and Bolts of our Ion Band State (IBS) theory of low energy nuclear reactions (LENR's) in palladium-deuteride (PdD) and palladium-hydride (PdH) are the electrons that hold together or tear apart the bonds (or lack of bonds) between deuterons (d's) or protons (p's) and the host material. In PdDx and PdH_x, this bonding is strongly correlated with loading: in ambient loading conditions (x< 0. 6), the bonding in hibits IBS occupation. As x arrow 1, slight increases and decreases in loading can lead to vibrations (which have conventionally been thought to occur from phonons) that can induce potential losses or increases of p/d. Naive assumptions about phonons fail to include these losses and increases. These effects can occur because neither H or D has core electrons and because in either PdD or PdH, the electrons near the Fermi Energy have negligible overlap with the nucleus of either D or H. I use these ideas to develop a formal justification, based on a generalization of conventional band theory (Scott Chubb, "Semi-Classical Conduction of Charged and Neutral Particles in Finite Lattices," 2004 March Meeting."), for the idea that occupation of IBS's can occur and that this can lead to nuclear reactions.

Energy-Efficient Office Buildings at High Latitudes

Energy Technology Data Exchange (ETDEWEB)

Lerum, V.

1996-12-31

This doctoral thesis describes a method for energy efficient office building design at high latitudes and cold climates. The method combines daylighting, passive solar heating, solar protection, and ventilative cooling. The thesis focuses on optimal design of an equatorial-facing fenestration system. A spreadsheet framework linking existing simplified methods is used. The daylight analysis uses location specific data on frequency distribution of diffuse daylight on vertical surfaces to estimate energy savings from optimal window and room configurations in combination with a daylight-responsive electric lighting system. The passive solar heating analysis is a generalization of a solar load ratio method adapted to cold climates by combining it with the Norwegian standard NS3031 for winter months when the solar savings fraction is negative. The emphasis is on very high computational efficiency to permit rapid and comprehensive examination of a large number of options early in design. The procedure is illustrated for a location in Trondheim, Norway, testing the relative significance of various design improvement options relative to a base case. The method is also tested for two other locations in Norway, at latitudes 58 and 70 degrees North. The band of latitudes between these limits covers cities in Alaska, Canada, Greenland, Iceland, Scandinavia, Finland, Russia, and Northern Japan. A comprehensive study of the ``whole building approach`` shows the impact of integrated daylighting and low-energy design strategies. In general, consumption of lighting electricity may be reduced by 50-80%, even at extremely high latitudes. The reduced internal heat from electric lights is replaced by passive solar heating. 113 refs., 85 figs., 25 tabs.

High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites.

Science.gov (United States)

Sutter-Fella, Carolin M; Li, Yanbo; Amani, Matin; Ager, Joel W; Toma, Francesca M; Yablonovitch, Eli; Sharp, Ian D; Javey, Ali

2016-01-13

Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH3NH3PbI3-xBrx perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamic range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ Eg ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells.

Compact printed high rejection triple band-notch UWB antenna with multiple wireless applications

Directory of Open Access Journals (Sweden)

Manish Sharma

2016-09-01

Full Text Available In this paper, small printed urn-shape triple notch ultra-wideband (UWB monopole antenna with diverse wireless applications is presented. Notch bands include WiMAX (IEEE802.16 3.30–3.80 GHz, WLAN IEEE802.11a/h/j/n (5.15–5.35 GHz, 5.25–5.35 GHz, 5.47–5.725 GHz, 5.725–5.825 GHz, and X-band downlink satellite system (7.25–7.75 GHz and other multiple wireless services as close range radar (8–12 GHz in X-band & satellite communication (12–18 GHz in Ku-band. By including T-shape stub and etching two C-shaped slots on the radiating patch, triple band-notch function is obtained with measured high band rejection (VSWR = 16.54 at 3.60 GHz, VSWR = 22.35 at 5.64 GHz and VSWR = 6.38 at 7.64 GHz and covers a wide useable fractional bandwidth of 154.56% (2.49–19.41 GHz. In short the antenna offers triple band-notch UWB systems as a compact multifunctional antenna to reduce the number of antennas installed in wireless devices for accessing multiple wireless networks with wide radiation pattern.

Multi-service highly sensitive rectifier for enhanced RF energy scavenging.

Science.gov (United States)

Shariati, Negin; Rowe, Wayne S T; Scott, James R; Ghorbani, Kamran

2015-05-07

Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478-496 and 852-869 MHz) and exhibits favorable impedance matching over a broad input power range (-40 to -10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of -10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments.

High-frequency homogenization of zero frequency stop band photonic and phononic crystals

CERN Document Server

Antonakakis, Tryfon; Guenneau, Sebastien

2013-01-01

We present an accurate methodology for representing the physics of waves, for periodic structures, through effective properties for a replacement bulk medium: This is valid even for media with zero frequency stop-bands and where high frequency phenomena dominate. Since the work of Lord Rayleigh in 1892, low frequency (or quasi-static) behaviour has been neatly encapsulated in effective anisotropic media. However such classical homogenization theories break down in the high-frequency or stop band regime. Higher frequency phenomena are of significant importance in photonics (transverse magnetic waves propagating in infinite conducting parallel fibers), phononics (anti-plane shear waves propagating in isotropic elastic materials with inclusions), and platonics (flexural waves propagating in thin-elastic plates with holes). Fortunately, the recently proposed high-frequency homogenization (HFH) theory is only constrained by the knowledge of standing waves in order to asymptotically reconstruct dispersion curves an...

Modeling charged defects inside density functional theory band gaps

International Nuclear Information System (INIS)

Schultz, Peter A.; Edwards, Arthur H.

2014-01-01

Density functional theory (DFT) has emerged as an important tool to probe microscopic behavior in materials. The fundamental band gap defines the energy scale for charge transition energy levels of point defects in ionic and covalent materials. The eigenvalue gap between occupied and unoccupied states in conventional DFT, the Kohn–Sham gap, is often half or less of the experimental band gap, seemingly precluding quantitative studies of charged defects. Applying explicit and rigorous control of charge boundary conditions in supercells, we find that calculations of defect energy levels derived from total energy differences give accurate predictions of charge transition energy levels in Si and GaAs, unhampered by a band gap problem. The GaAs system provides a good theoretical laboratory for investigating band gap effects in defect level calculations: depending on the functional and pseudopotential, the Kohn–Sham gap can be as large as 1.1 eV or as small as 0.1 eV. We find that the effective defect band gap, the computed range in defect levels, is mostly insensitive to the Kohn–Sham gap, demonstrating it is often possible to use conventional DFT for quantitative studies of defect chemistry governing interesting materials behavior in semiconductors and oxides despite a band gap problem

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Energy Technology Data Exchange (ETDEWEB)

Bedair, S. M., E-mail: bedair@ncsu.edu; Harmon, Jeffrey L.; Carlin, C. Zachary; Hashem Sayed, Islam E.; Colter, P. C. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2016-05-16

The performance of n{sup +}-InGaP(Te)/p{sup +}-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics. Several limitations for as grown and annealed TJ can be attributed to the Te doping of InGaP and its behavior at the junction interface. Te atoms in InGaP tend to get attached at step edges, resulting in a Te memory effect. In this work, we use the peak tunneling current (J{sub pk}) in this TJ as a diagnostic tool to study the behavior of the Te dopant at the TJ interface. Additionally, we used our understanding of Te behavior at the interface, guided by device modeling, to modify the Te source shut-off procedure and the growth rate. These modifications lead to a record performance for both the as-grown (2000 A/cm{sup 2}) and annealed (1000 A/cm{sup 2}) high band gap tunnel junction.

Dual-band high-efficiency polarization converter using an anisotropic metasurface

Science.gov (United States)

Lin, Baoqin; Wang, Buhong; Meng, Wen; Da, Xinyu; Li, Wei; Fang, Yingwu; Zhu, Zihang

2016-05-01

In this work, a dual-band and high-efficiency reflective cross-polarization converter based on an anisotropic metasurface for linearly polarized electromagnetic waves is proposed. Its unit cell is composed of an elliptical disk-ring mounted on grounded dielectric substrate, which is an anisotropic structure with a pair of mutually perpendicular symmetric axes u and v along ± 45 ° directions with respect to y-axis direction. Both the simulation and measured results show that the polarization converter can convert x- or y-polarized incident wave to its cross polarized wave in the two frequency bands (6.99-9.18 GHz, 11.66-20.40 GHz) with the conversion efficiency higher than 90%; moreover, the higher frequency band is an ultra-wide one with a relative bandwidth of 54.5% for multiple plasmon resonances. In addition, we present a detailed analysis for the polarization conversion of the polarization converter, and derive a formula to calculate the cross- and co-polarization reflections at y-polarized incidence according to the phase differences between the two reflected coefficients at u-polarized and v-polarized incidences. The simulated, calculated, and measured results are all in agreement with the entire frequency regions.

Whistler Triggered Upper Band Chorus Observed in Alaska

Science.gov (United States)

Hosseini, P.; Golkowski, M.

2017-12-01

VLF radiation from lightning discharges is one of several sources of energy injection into the inner magnetosphere from the Earth. Lightning discharges initially produce a broadband impulse or `sferic' but after propagation in the dispersive magnetosphere this waveform soon becomes quasi narrow band with the characteristic spectrographic form of the whistler. Most of the lightning induced VLF wave energy injected into the magnetosphere will be unducted with a k-vector which becomes increasingly oblique. Although unducted radiation is ubiquitous throughout the inner magnetosphere, it is generally of a low amplitude due to Landau damping and is not expected to produce strong nonlinear phenomena such as triggered emissions and chorus waves. However, VLF wave energy ducted or trapped in field-aligned plasma density enhancements can have relatively large amplitudes due to focusing and also linear cyclotron resonance growth. Therefore high amplitude ducted whistler waves can trigger a number of complex nonlinear phenomena. These include the triggering of VLF emissions and triggering of VLF hiss or chorus. Such phenomena are generally considered to result from nonlinear electron cyclotron phase trapping. Observation of such VLF emissions triggered by natural whistlers have been reported since the 1970s in Antarctica. We present observations of whistlers triggered upper band chorus emission from Alaska. Dispersion analyze of whistlers determine the L-shell range to be 4.5 clear frequency band gap between upper and lower band of the observed chorus emissions. The observations point to ducted chorus generation in the vicinity of the plasmapause boundary.

Development of C-band Accelerating Section for SuperKEKB

CERN Document Server

Kamitani, T; Ikeda, M; Kakihara, K; Ohsawa, S; Oogoe, T; Sugimura, T; Takatomi, T; Yamaguchi, S; Yokoyama, K

2004-01-01

For the luminosity upgrade of the present KEK B-factory to SuperKEKB, the injector linac has to increase the positron acceleration energy from 3.5 to 8.0 GeV. In order to double the acceleration field gradient from 21 to 42 MV/m, design studies on C-band accelerator module has started in 2002. First prototype 1-m long accelerating section has been fabricated based upon a design which is half scale of the present S-band section. High power test of the C-band section has been performed at a test stand and later at an accelerator module in the KEKB injector linac. In a beam acceleration test, a field gradient of 41 MV/m is achieved with 43 MW RF power from a klystron. This paper report on the recent status of the high-power test and also the development of a second prototype section.

Analysis of high-frequency energy in long-term average spectra of singing, speech, and voiceless fricatives.

Science.gov (United States)

Monson, Brian B; Lotto, Andrew J; Story, Brad H

2012-09-01

The human singing and speech spectrum includes energy above 5 kHz. To begin an in-depth exploration of this high-frequency energy (HFE), a database of anechoic high-fidelity recordings of singers and talkers was created and analyzed. Third-octave band analysis from the long-term average spectra showed that production level (soft vs normal vs loud), production mode (singing vs speech), and phoneme (for voiceless fricatives) all significantly affected HFE characteristics. Specifically, increased production level caused an increase in absolute HFE level, but a decrease in relative HFE level. Singing exhibited higher levels of HFE than speech in the soft and normal conditions, but not in the loud condition. Third-octave band levels distinguished phoneme class of voiceless fricatives. Female HFE levels were significantly greater than male levels only above 11 kHz. This information is pertinent to various areas of acoustics, including vocal tract modeling, voice synthesis, augmentative hearing technology (hearing aids and cochlear implants), and training/therapy for singing and speech.

High Power Test of an X-Band Slotted-IRIS Accelerator Structure at NLCTA

International Nuclear Information System (INIS)

Doebert, S.; Fandos, R.; Grudiev, A.; Heikkinen, S.; Rodriquez, J.A.; Taborelli, M.; Wuensch, W.; Adolphsen, Chris E.; Laurent, L.

2007-01-01

The CLIC study group at CERN has built two X-band HDS (hybrid damped structure) accelerating structures for high-power testing in NLCTA at SLAC. These accelerating structures are novel with respect to their rf- design and their fabrication technique. The eleven-cell constant impedance structures, one made out of copper and one out of molybdenum, are assembled from clamped high-speed milled quadrants. They feature the same heavy higher-order-mode damping as nominal CLIC structures achieved by slotted irises and radial damping waveguides for each cell. The X-band accelerators are exactly scaled versions of structures tested at 30 GHz in the CLIC test facility, CTF3. The results of the X-band tests are presented and compared to those at 30 GHz to determine frequency scaling, and are compared to the extensive copper data from the NLC structure development program to determine material dependence and make a basic validation of the HDS design

Band head spin assignment of superdeformed bands in Hg isotopes through power index formula

Science.gov (United States)

Sharma, Honey; Mittal, H. M.

2018-05-01

The power index formula has been used to obtain the band head spin (I 0) of all the superdeformed (SD) bands in Hg isotopes. A least squares fitting approach is used. The root mean square deviations between the determined and the observed transition energies are calculated by extracting the model parameters using the power index formula. Whenever definite spins are available, the determined and the observed transition energies are in accordance with each other. The computed values of dynamic moment of inertia J (2) obtained by using the power index formula and its deviation with the rotational frequency is also studied. Excellent agreement is shown between the calculated and the experimental results for J (2) versus the rotational frequency. Hence, the power index formula works very well for all the SD bands in Hg isotopes expect for 195Hg(2, 3, 4).

Investigation of Raman bands vapour of contours of trichloroethylene at high pressure

International Nuclear Information System (INIS)

Zaleskaya, G.A.; Ikramov, M.; Shukurov, T.

1989-01-01

Investigation of high-pressure extraneous gas on contour comb. band, spreading trichloroethylene steams are in given article. Increasing of extraneous gas pressure brings to decreasing free molecule circling time is shown

Table of members of quasi-bands

International Nuclear Information System (INIS)

Sakai, Mitsuo.

1984-04-01

The probable members of the quasi-bands in even-even nuclei for Z between 6 and 100 are listed in this table. The terms quasi-bands have been introduced in the so-called spherical regions as the counter parts of the collective bands in the deformed regions. In the present compilation, the data for deformed nuclei are classified for convenience under the same titles, Quasi-Ground Band, Quasi-Beta Band and Quasi-Gamma Band, as are used for other nuclear regions. The present edition covers the literature through September, 1983. Fifteen newly discovered nuclides are included. The classification of energy level into quasi-bands is made on the basis of the systematic trend in the data over large groups of nuclei. (Kato, T.)

High-Energy Electron Beam Application to Air Pollutants Removal

International Nuclear Information System (INIS)

Ighigeanu, D.; Martin, D.; Manaila, E.; Craciun, G.; Calinescu, I.

2009-01-01

The advantage of electron beam (EB) process in pollutants removal is connected to its high efficiency to transfer high amount of energy directly into the matter under treatment. Disadvantage which is mostly related to high investment cost of accelerator may be effectively overcome in future as the result of use accelerator new developments. The potential use of medium to high-energy high power EB accelerators for air pollutants removal is demonstrated in [1]. The lower electrical efficiencies of accelerators with higher energies are partially compensated by the lower electron energy losses in the beam windows. In addition, accelerators with higher electron energies can provide higher beam powers with lower beam currents [1]. The total EB energy losses (backscattering, windows and in the intervening air space) are substantially lower with higher EB incident energy. The useful EB energy is under 50% for 0.5 MeV and about 95% above 3 MeV. In view of these arguments we decided to study the application of high energy EB for air pollutants removal. Two electron beam accelerators are available for our studies: electron linear accelerators ALIN-10 and ALID-7, built in the Electron Accelerator Laboratory, INFLPR, Bucharest, Romania. Both accelerators are of traveling-wave type, operating at a wavelength of 10 cm. They utilize tunable S-band magnetrons, EEV M 5125 type, delivering 2 MW of power in 4 μ pulses. The accelerating structure is a disk-loaded tube operating in the 2 mode. The optimum values of the EB peak current IEB and EB energy EEB to produce maximum output power PEB for a fixed pulse duration EB and repetition frequency fEB are as follows: for ALIN-10: EEB = 6.23 MeV; IEB =75 mA; PEB 164 W (fEB = 100 Hz, EB = 3.5 s) and for ALID-7: EEB 5.5 MeV; IEB = 130 mA; PEB = 670 W (fEB = 250 Hz, EB = 3.75 s). This paper presents a special designed installation, named SDI-1, and several representative results obtained by high energy EB application to SO 2 , NOx and VOCs

Surface Resonance Bands on (001)W: Experimental Dispersion Relations

DEFF Research Database (Denmark)

Willis, R. F.; Feuerbacher, B.; Christensen, N. Egede

1977-01-01

A band of unbound surface states (resonances), located in an energy region above the vacuum threshold corresponding to an energy band gap in the electron states of the bulk crystal, has been observed by angle-resolved secondary-electron-emission spectroscopy. The experimental dispersion behavior...... is in agreement with the two-dimensional band structure of a clean (001)W surface recently proposed by Smith and Mittheiss....

High-power picosecond pulse delivery through hollow core photonic band gap fibers

DEFF Research Database (Denmark)

Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian

2016-01-01

We demonstrated robust and bend insensitive fiber delivery of high power laser with diffraction limited beam quality for two different kinds of hollow core band gap fibers. The light source for this experiment consists of ytterbium-doped double clad fiber aeroGAIN-ROD-PM85 in a high power amplifier...

Crystal structure and energy band and optical properties of phosphate Sr3P4O13

International Nuclear Information System (INIS)

Zhang, Y.-C.; Cheng, W.-D.; Wu, D.-S.; Zhang, H.; Chen, D.-G.; Gong, Y.-J.; Kan, Z.-G.

2004-01-01

A single crystal of the compound Sr 3 P 4 O 13 has been found and the crystal structure has been characterized by means of single crystal X-ray diffraction analysis. The compound crystallizes in triclinic system and belongs to space group P1-bar. It builds up from SrO 7 polyhedra and P 4 O 13 -6 anions and has a layered structure, and the Sr atoms are located in the interlayer space. The absorption and luminescence spectrum of Sr 3 P 4 O 13 microcrystals have been measured. The calculated results of crystal energy band structure by the DFT show that the solid state of Sr 3 P 4 O 13 is an isolator with direct band gap. The calculated total and partial density of states indicate that the top valence bands are contributions from P 3p and O 2p states and low conduction bands mostly originate from Sr atomic states. The calculated optical response functions expect that the Sr 3 P 4 O 13 is a low refractive index, and it is possible that the Sr 3 P 4 O 13 is used to make transparent material between the UV and FR light zone

Correlation between electronic structure and energy band in Eu-doped CuInTe2 semiconductor compound with chalcopyrite structure

Institute of Scientific and Technical Information of China (English)

Tai Wang; Yong-Quan Guo; Shuai Li

2017-01-01

The Eu-doped Cu(In,Eu)Te2 semiconductors with chalcopyrite structures are promising materials for their applications in the absorption layer for thin-film solar cells due to their wider band-gaps and better optical properties than those of CulnTe2.In this paper,the Eu-doped CulnTe2 (Culn1-xEuxTe2,x =0,0.1,0.2,0.3) are studied systemically based on the empirical electron theory (EET).The studies cover crystal structures,bonding regularities,cohesive energies,energy levels,and valence electron structures.The theoretical values fit the experimental results very well.The physical mechanism of a broadened band-gap induced by Eu doping into CuInTe2 is the transitions between different hybridization energy levels induced by electron hopping between s and d orbitals and the transformations from the lattice electrons to valence electrons for Cu and In ions.The research results reveal that the photovoltaic effect induces the increase of lattice electrons of In and causes the electric resistivity to decrease.The Eu doping into CuInTe2 mainly influences the transition between different hybridization energy levels for Cu atoms,which shows that the 3d electron numbers of Cu atoms change before and after Eu doping.In single phase CuIn1-xEuxTe2,the number of valence electrons changes regularly with increasing Eu content,and the calculated band gap Eg also increases,which implies that the optical properties of Eu-doped CuIn1-xEuxTe2 are improved.

A postprocessing method based on high-resolution spectral estimation for FDTD calculation of phononic band structures

Energy Technology Data Exchange (ETDEWEB)

Su Xiaoxing, E-mail: xxsu@bjtu.edu.c [School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044 (China); Li Jianbao; Wang Yuesheng [Institute of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044 (China)

2010-05-15

If the energy bands of a phononic crystal are calculated by the finite difference time domain (FDTD) method combined with the fast Fourier transform (FFT), good estimation of the eigenfrequencies can only be ensured by the postprocessing of sufficiently long time series generated by a large number of FDTD iterations. In this paper, a postprocessing method based on the high-resolution spectral estimation via the Yule-Walker method is proposed to overcome this difficulty. Numerical simulation results for three-dimensional acoustic and two-dimensional elastic systems show that, compared with the classic FFT-based postprocessing method, the proposed method can give much better estimation of the eigenfrequencies when the FDTD is run with relatively few iterations.

A postprocessing method based on high-resolution spectral estimation for FDTD calculation of phononic band structures

International Nuclear Information System (INIS)

Su Xiaoxing; Li Jianbao; Wang Yuesheng

2010-01-01

If the energy bands of a phononic crystal are calculated by the finite difference time domain (FDTD) method combined with the fast Fourier transform (FFT), good estimation of the eigenfrequencies can only be ensured by the postprocessing of sufficiently long time series generated by a large number of FDTD iterations. In this paper, a postprocessing method based on the high-resolution spectral estimation via the Yule-Walker method is proposed to overcome this difficulty. Numerical simulation results for three-dimensional acoustic and two-dimensional elastic systems show that, compared with the classic FFT-based postprocessing method, the proposed method can give much better estimation of the eigenfrequencies when the FDTD is run with relatively few iterations.

Electronic band structure of lithium, sodium and potassium fluorides

International Nuclear Information System (INIS)

Jouanin, C.; Albert, J.P.; Gout, C.

1975-01-01

A mixed tight-binding, pseudopotential method is proposed to calculate the energy band structure of large-gap crystals and is tested here on LiF, NaF and KF. Three-centre terms are included in the determination of the valence bands by the tight-binding method and for the conduction bands we use a pseudopotential model proposed by Bassani and Giuliano, modified for the positive ions. By taking into account the polarization corrections, transitions calculated from the energy band structures are compared with experimental data and the agreement is generally good

Picosecond thermometer in the amide I band of myoglobin

DEFF Research Database (Denmark)

Austin, R.H.; Xie, A.; Meer, L. van der

2005-01-01

The amide I and II bands in myoglobin show a heterogeneous temperature dependence, with bands at 6.17 and 6.43 mu m which are more intense at low temperatures. The amide I band temperature dependence is on the long wavelength edge of the band, while the short wavelength side has almost...... can be used to determine the time it takes vibrational energy to flow into the hydration shell. We determine that vibrational energy flow to the hydration shell from the amide I takes approximately 20 ps to occur....

L-band brightness temperature disaggregation for use with S-band and C-band radiometer data for WCOM

Science.gov (United States)

Yao, P.; Shi, J.; Zhao, T.; Cosh, M. H.; Bindlish, R.

2017-12-01

There are two passive microwave sensors onboard the Water Cycle Observation Mission (WCOM), which includes a synthetic aperture radiometer operating at L-S-C bands and a scanning microwave radiometer operating from C- to W-bands. It provides a unique opportunity to disaggregate L-band brightness temperature (soil moisture) with S-band C-bands radiometer data. In this study, passive-only downscaling methodologies are developed and evaluated. Based on the radiative transfer modeling, it was found that the TBs (brightness temperature) between the L-band and S-band exhibit a linear relationship, and there is an exponential relationship between L-band and C-band. We carried out the downscaling results by two methods: (1) downscaling with L-S-C band passive measurements with the same incidence angle from payload IMI; (2) downscaling with L-C band passive measurements with different incidence angle from payloads IMI and PMI. The downscaling method with L-S bands with the same incident angle was first evaluated using SMEX02 data. The RMSE are 2.69 K and 1.52 K for H and V polarization respectively. The downscaling method with L-C bands is developed with different incident angles using SMEX03 data. The RMSE are 2.97 K and 2.68 K for H and V polarization respectively. These results showed that high-resolution L-band brightness temperature and soil moisture products could be generated from the future WCOM passive-only observations.

The effectiveness of Renewable Portfolio Standard banding and carve-outs in supporting high-cost types of renewable electricity

International Nuclear Information System (INIS)

Buckman, Greg

2011-01-01

Renewable Portfolio Standards (RPSs) are renewable electricity (RES-E) subsidy mechanisms in which governments mandate how much RES-E should be generated and markets determine the cost of the subsidy needed to generate the RES-E. Two modifications of the RPS that can help support high-cost types of RES-E are banding, where governments mandate higher multiples of RPS tradable certificates for high-cost types of RES-E, and carve-outs, where governments prescribe parts of a RPS target that can be met only by a particular type, or types, of RES-E. This paper analyses the design and generation performance of banding, as used in the UK, with some reference to Italy; and carve-outs, as used in the USA. To date, there is insufficient experience of either device to reach firm conclusions about their generation effectiveness. However, there is early, tentative evidence that banding is successful at supporting high-cost types of RES-E in the UK. Carve-outs are not being fully exploited in US states that use a RPS mechanism, and Italy is using banding in a fairly insignificant way. Though both devices have different design strengths and weaknesses, and either could be adapted to specific RPS markets, banding is probably the better device for supporting high-cost RES-E. - Highlights: → I analysed three countries that use either Renewable Portfolio Standards banding or carve-outs. → I assess whether banding or carve-outs have diversified renewable electricity generation. → There's insufficient banding/carve-out experience to reach firm diversification conclusions. → There's early evidence that the UK banding is diversifying its renewable electricity.

Manufacturing of the L band 9-cell niobium cavity

International Nuclear Information System (INIS)

Matsuoka, Masanori; Ohkubo, Kohichi; Yamanaka, Toshiyuki; Kako, Eiji; Saito, Kenji; Shishido, Toshio; Ono, Masaaki; Noguchi, Shuichi.

1993-01-01

Since 1990, L-band niobium superconducting cavities have been developed with collaboration between our company and National Laboratory for High Energy Physics (KEK). The manufacturing procedure and the performance of 9-cell superconducting cavity are presented. The maximum accelerating gradient of 12 MV/m was attained in a cold test. (author)

Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

Directory of Open Access Journals (Sweden)

D. P. Samajdar

2014-01-01

Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

Table of superdeformed nuclear bands and fission isomers

International Nuclear Information System (INIS)

Firestone, R.B.; Singh, B.

1994-06-01

A minimum in the second potential well of deformed nuclei was predicted and the associated shell gaps are illustrated in the harmonic oscillator potential shell energy surface calculations shown in this report. A strong superdeformed minimum in 152 Dy was predicted for β 2 -0.65. Subsequently, a discrete set of γ-ray transitions in 152 DY was observed and, assigned to the predicted superdeformed band. Extensive research at several laboratories has since focused on searching for other mass regions of large deformation. A new generation of γ-ray detector arrays is already producing a wealth of information about the mechanisms for feeding and deexciting superdeformed bands. These bands have been found in three distinct regions near A=l30, 150, and 190. This research extends upon previous work in the actinide region near A=240 where fission isomers were identified and also associated with the second potential well. Quadrupole moment measurements for selected cases in each mass region are consistent with assigning the bands to excitations in the second local minimum. As part of our committment to maintain nuclear structure data as current as possible in the Evaluated Nuclear Structure Reference File (ENSDF) and the Table of Isotopes, we have updated the information on superdeformed nuclear bands. As of April 1994, we have complied data from 86 superdeformed bands and 46 fission isomers identified in 73 nuclides for this report. For each nuclide there is a complete level table listing both normal and superdeformed band assignments; level energy, spin, parity, half-life, magneto moments, decay branchings; and the energies, final levels, relative intensities, multipolarities, and mixing ratios for transitions deexciting each level. Mass excess, decay energies, and proton and neutron separation energies are also provided from the evaluation of Audi and Wapstra

Table of superdeformed nuclear bands and fission isomers

Energy Technology Data Exchange (ETDEWEB)

Firestone, R.B. [Lawrence Berkeley Lab., CA (United States); Singh, B. [McMaster Univ., Hamilton, ON (Canada)

1994-06-01

A minimum in the second potential well of deformed nuclei was predicted and the associated shell gaps are illustrated in the harmonic oscillator potential shell energy surface calculations shown in this report. A strong superdeformed minimum in {sup 152}Dy was predicted for {beta}{sub 2}-0.65. Subsequently, a discrete set of {gamma}-ray transitions in {sup 152}DY was observed and, assigned to the predicted superdeformed band. Extensive research at several laboratories has since focused on searching for other mass regions of large deformation. A new generation of {gamma}-ray detector arrays is already producing a wealth of information about the mechanisms for feeding and deexciting superdeformed bands. These bands have been found in three distinct regions near A=l30, 150, and 190. This research extends upon previous work in the actinide region near A=240 where fission isomers were identified and also associated with the second potential well. Quadrupole moment measurements for selected cases in each mass region are consistent with assigning the bands to excitations in the second local minimum. As part of our committment to maintain nuclear structure data as current as possible in the Evaluated Nuclear Structure Reference File (ENSDF) and the Table of Isotopes, we have updated the information on superdeformed nuclear bands. As of April 1994, we have complied data from 86 superdeformed bands and 46 fission isomers identified in 73 nuclides for this report. For each nuclide there is a complete level table listing both normal and superdeformed band assignments; level energy, spin, parity, half-life, magneto moments, decay branchings; and the energies, final levels, relative intensities, multipolarities, and mixing ratios for transitions deexciting each level. Mass excess, decay energies, and proton and neutron separation energies are also provided from the evaluation of Audi and Wapstra.

Dual-band frequency selective surface with large band separation and stable performance

Science.gov (United States)

Zhou, Hang; Qu, Shao-Bo; Peng, Wei-Dong; Lin, Bao-Qin; Wang, Jia-Fu; Ma, Hua; Zhang, Jie-Qiu; Bai, Peng; Wang, Xu-Hua; Xu, Zhuo

2012-05-01

A new technique of designing a dual-band frequency selective surface with large band separation is presented. This technique is based on a delicately designed topology of L- and Ku-band microwave filters. The two band-pass responses are generated by a capacitively-loaded square-loop frequency selective surface and an aperture-coupled frequency selective surface, respectively. A Faraday cage is located between the two frequency selective surface structures to eliminate undesired couplings. Based on this technique, a dual-band frequency selective surface with large band separation is designed, which possesses large band separation, high selectivity, and stable performance under various incident angles and different polarizations.

Atmospheric and Fog Effects on Ultra-Wide Band Radar Operating at Extremely High Frequencies.

Science.gov (United States)

Balal, Nezah; Pinhasi, Gad A; Pinhasi, Yosef

2016-05-23

The wide band at extremely high frequencies (EHF) above 30 GHz is applicable for high resolution directive radars, resolving the lack of free frequency bands within the lower part of the electromagnetic spectrum. Utilization of ultra-wideband signals in this EHF band is of interest, since it covers a relatively large spectrum, which is free of users, resulting in better resolution in both the longitudinal and transverse dimensions. Noting that frequencies in the millimeter band are subjected to high atmospheric attenuation and dispersion effects, a study of the degradation in the accuracy and resolution is presented. The fact that solid-state millimeter and sub-millimeter radiation sources are producing low power, the method of continuous-wave wideband frequency modulation becomes the natural technique for remote sensing and detection. Millimeter wave radars are used as complementary sensors for the detection of small radar cross-section objects under bad weather conditions, when small objects cannot be seen by optical cameras and infrared detectors. Theoretical analysis for the propagation of a wide "chirped" Frequency-Modulated Continuous-Wave (FMCW) radar signal in a dielectric medium is presented. It is shown that the frequency-dependent (complex) refractivity of the atmospheric medium causes distortions in the phase of the reflected signal, introducing noticeable errors in the longitudinal distance estimations, and at some frequencies may also degrade the resolution.

Decay out of the superdeformed band in {sup 143}Eu

Energy Technology Data Exchange (ETDEWEB)

Atac, A; Piiparinen, M; Herskind, B [Copenhagen Univ. (Denmark); and others

1992-08-01

The connection between the super-deformed (SD) and normal-deformed (ND) states had not been observed, owing its difficulty to a statistical, highly fragmented decay path out of the SD bands. This left both the spin and the excitation energy of the SD bands undetermined. In this paper, the authors present results of a new experimental approach, where they take advantage of triple and higher-fold coincidences to study the decay-out of a SD band. They carried out an experiment at the Niels Bohr Institute Tandem Accelerator Laboratory, where they used the (160 MeV) {sup 37}Cl + {sup 110}Pd {yields} {sup 143}Eu + 4n reaction. 9 refs., 3 figs.

193Hg collective oblate band with Ex>5.7 MeV

International Nuclear Information System (INIS)

Roy, N.; Henry, E.A.; Becker, J.A.

1993-01-01

Rotational bands in the neutron-deficient Pb nuclei 192,194,196-201 Pb have been reported recently. Band members are connected by L = 1 transitions, with crossover L = 2 transitions observed at the higher γ-ray energies. Regular and irregular patterns of γ-ray energies are observed. Conversion coefficients determined from intensity balance suggest the L = 1 transitions are M1. The bands have generally been interpreted as collective oblate, involving deformation aligned high-j proton configurations such as π(s 1/2 -2 h 9/2 i 13/2 ), and rotation aligned i 13/2 -n neutrons. Evidence for a similar band in 193 Hg has been obtained. 193 Hg was populated in the reaction 176 Yb( 22 Ne,5n) at E i ( 22 Ne) = 110 MeV. Reaction γ rays were detected with the Ge detector array HERA. A new 'collective' structure was observed with E x >5.7 MeV. States of the structure extend from I≥47/2 to I +10, and they decay with competing dipole and quadrupole transitions. The ratio B(M1)/B(E2), ∼ 2μ 2 /(e b) 2 , is approximately 10x lower in 193 Hg than in the Pb bands. The lowest member is produced with ∼20% of the 193 Hg cross section. Evidence for a similar band in 196 Hg will be presented at this meeting

Banded ion morphology - main and recovery storm phases

International Nuclear Information System (INIS)

Frahm, R.A.; Reiff, P.H.; Winningham, J.D.; Burch, J.L.

1986-01-01

The occurrence of bands in ion spectra obtained with the high-altitude and low-altitude plasma instruments on DE-1 and DE-2, respectively, during main and recovery storm phases from the period September 1981 - January 1982 is analyzed statistically. Typical spectra are shown; diagrams and graphs of storm morphology are provided; and two theoretical models (one based on time-of-flight effects and another based on convective dispersion) are discussed. It is found that bands occur more often in the main phase than in the recovery phase, and more often and at higher latitudes in the evening than before noon. From the stability of the bands and the dependence of energy on latitude it is inferred that convective dispersion plays a more important role than time-of-flight effects in the motion of heavy ions in the magnetosphere. 14 references

High-power comparison among brazed, clamped and electroformed X-band cavities

Energy Technology Data Exchange (ETDEWEB)

Spataro, B., E-mail: bruno.spataro@lnf.infn.it [INFN-LNF, Via E. Fermi 40, 00044 Frascati, Rome (Italy); Alesini, D.; Chimenti, V. [INFN-LNF, Via E. Fermi 40, 00044 Frascati, Rome (Italy); Dolgashev, V. [SLAC, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States); Higashi, Y. [KEK 1-1 Oho, Tsukuba, Ibaraki, 305-0801 (Japan); Migliorati, M.; Mostacci, A. [University of Rome Sapienza, Department of Fundamental and Applied Science for Engineering, Via A. Scarpa 14, 00185 Rome (Italy); Parodi, R. [INFN-Genova, Via Dodecaneso 33, 16146 Genova (Italy); Tantawi, S.G.; Yeremian, A.D. [SLAC, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States)

2011-11-21

We report the building procedure of X-band copper structures using the electroforming and electroplating techniques. These techniques allow the deposition of copper layers on a suitable die and they can be used to build RF structures avoiding the high temperature brazing step in the standard technique. We show the constructed prototypes and low power RF measurements and discuss the results of the high power tests at SLAC National Accelerator Laboratory.

New results on the superdeformed {sup 196}Pb nucleus: The decay of the excited bands to the yrast band

Energy Technology Data Exchange (ETDEWEB)

Bouneau, S.; Azaiez, F.; Duprat, J. [IPN, Orsay (France)] [and others

1996-12-31

The study of the superdeformed (SD) {sup 196}Pb nucleus has been revisited using the EUROGAM phase 2 spectrometer. In addition to the known yrast and two lowest excited SD bands, a third excited SD band has been seen. All of the three excited bands were found to decay to the yrast SD band through, presumably, E1 transitions, allowing relative spin and excitation energy assignments. Comparisons with calculations using the random-phase approximation suggest that all three excited bands can be interpreted as octupole vibrational structures.

Band gap calculations of the semiconductor BNxP1−x using modified Becke–Johnson approximation

International Nuclear Information System (INIS)

Benkraouda, M.; Amrane, N.

2013-01-01

Highlights: ► The Modified Becke–Johnson scheme gives a very accurate band gap. ► We have shown the invalidity of Vegard’s linear rule for BN x P 1−x . ► The band gap changes with alloy concentration are important in band gap engineering. - Abstract: In this work, the electronic properties of BN, BP and BN x P 1−x compounds have been investigated by means of first-principles density-functional total-energy calculation using the all-electron full potential linear augmented plane-wave method (FP-LAPW). The (FP-LAPW) method was used within the density functional theory (DFT) along with the Engel–Vosko and Becke–Johnson exchange correlation potential. The energy bands along high symmetry directions, the density of states and bowing distributions are calculated. The results have been discussed in terms of previously existing experimental and theoretical data, and comparisons with similar compounds have been made. Analysis of band structure suggests direct and pseudo-direct band gaps for both compounds.

Convergence of valence bands for high thermoelectric performance for p-type InN

International Nuclear Information System (INIS)

Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

2015-01-01

Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

Controlling the conduction band offset for highly efficient ZnO nanorods based perovskite solar cell

International Nuclear Information System (INIS)

Dong, Juan; Shi, Jiangjian; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

2015-01-01

The mechanism of charge recombination at the interface of n-type electron transport layer (n-ETL) and perovskite absorber on the carrier properties in the perovskite solar cell is theoretically studied. By solving the one dimensional diffusion equation with different boundary conditions, it reveals that the interface charge recombination in the perovskite solar cell can be suppressed by adjusting the conduction band offset (ΔE C ) at ZnO ETL/perovskite absorber interface, thus leading to improvements in cell performance. Furthermore, Mg doped ZnO nanorods ETL has been designed to control the energy band levels. By optimizing the doping amount of Mg, the conduction band minimum of the Mg doped ZnO ETL has been raised up by 0.29 eV and a positive ΔE C of about 0.1 eV is obtained. The photovoltage of the cell is thus significantly increased due to the relatively low charge recombination

Multi-Service Highly Sensitive Rectifier for Enhanced RF Energy Scavenging

Science.gov (United States)

Shariati, Negin; Rowe, Wayne S. T.; Scott, James R.; Ghorbani, Kamran

2015-01-01

Due to the growing implications of energy costs and carbon footprints, the need to adopt inexpensive, green energy harvesting strategies are of paramount importance for the long-term conservation of the environment and the global economy. To address this, the feasibility of harvesting low power density ambient RF energy simultaneously from multiple sources is examined. A high efficiency multi-resonant rectifier is proposed, which operates at two frequency bands (478–496 and 852–869 MHz) and exhibits favorable impedance matching over a broad input power range (−40 to −10 dBm). Simulation and experimental results of input reflection coefficient and rectified output power are in excellent agreement, demonstrating the usefulness of this innovative low-power rectification technique. Measurement results indicate an effective efficiency of 54.3%, and an output DC voltage of 772.8 mV is achieved for a multi-tone input power of −10 dBm. Furthermore, the measured output DC power from harvesting RF energy from multiple services concurrently exhibits a 3.14 and 7.24 fold increase over single frequency rectification at 490 and 860 MHz respectively. Therefore, the proposed multi-service highly sensitive rectifier is a promising technique for providing a sustainable energy source for low power applications in urban environments. PMID:25951137

Nanoscale measurements of unoccupied band dispersion in few-layer graphene.

Science.gov (United States)

Jobst, Johannes; Kautz, Jaap; Geelen, Daniël; Tromp, Rudolf M; van der Molen, Sense Jan

2015-11-26

The properties of any material are fundamentally determined by its electronic band structure. Each band represents a series of allowed states inside a material, relating electron energy and momentum. The occupied bands, that is, the filled electron states below the Fermi level, can be routinely measured. However, it is remarkably difficult to characterize the empty part of the band structure experimentally. Here, we present direct measurements of unoccupied bands of monolayer, bilayer and trilayer graphene. To obtain these, we introduce a technique based on low-energy electron microscopy. It relies on the dependence of the electron reflectivity on incidence angle and energy and has a spatial resolution ∼10 nm. The method can be easily applied to other nanomaterials such as van der Waals structures that are available in small crystals only.

Internal high linear energy transfer (LET) targeted radiotherapy for cancer

International Nuclear Information System (INIS)

Allen, Barry J

2006-01-01

High linear energy transfer (LET) radiation for internal targeted therapy has been a long time coming on to the medical therapy scene. While fundamental principles were established many decades ago, the clinical implementation has been slow. Localized neutron capture therapy, and more recently systemic targeted alpha therapy, are at the clinical trial stage. What are the attributes of these therapies that have led a band of scientists and clinicians to dedicate so much of their careers? High LET means high energy density, causing double strand breaks in DNA, and short-range radiation, sparing adjacent normal tissues. This targeted approach complements conventional radiotherapy and chemotherapy. Such therapies fail on several fronts. Foremost is the complete lack of progress for the control of primary GBM, the holy grail for cancer therapies. Next is the inability to regress metastatic cancer on a systemic basis. This has been the task of chemotherapy, but palliation is the major application. Finally, there is the inability to inhibit the development of lethal metastatic cancer after successful treatment of the primary cancer. This review charts, from an Australian perspective, the developing role of local and systemic high LET, internal radiation therapy. (review)

Reconstruction of Band Structure Induced by Electronic Nematicity in an FeSe Superconductor

Science.gov (United States)

Nakayama, K.; Miyata, Y.; Phan, G. N.; Sato, T.; Tanabe, Y.; Urata, T.; Tanigaki, K.; Takahashi, T.

2014-12-01

We have performed high-resolution angle-resolved photoemission spectroscopy on an FeSe superconductor (Tc˜8 K ), which exhibits a tetragonal-to-orthorhombic structural transition at Ts˜90 K . At low temperature, we found splitting of the energy bands as large as 50 meV at the M point in the Brillouin zone, likely caused by the formation of electronically driven nematic states. This band splitting persists up to T ˜110 K , slightly above Ts, suggesting that the structural transition is triggered by the electronic nematicity. We have also revealed that at low temperature the band splitting gives rise to a van Hove singularity within 5 meV of the Fermi energy. The present result strongly suggests that this unusual electronic state is responsible for the unconventional superconductivity in FeSe.

High-Efficiency, Ka-Band Solid-State Power Amplifier Utilizing GaN Technology, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — QuinStar Technology proposes to develop a high-efficiency, solid-state power amplifier (SSPA), operating at Ka-band frequencies, for high data rate, long range space...

Energy-expending behaviour in frightened caribou when dispersed singly or in small bands

Directory of Open Access Journals (Sweden)

Otto Blehr

1997-04-01

Full Text Available The behaviour of single, and small bands of caribou (Rangifer tarandus groenlandicus when confronted by humans was compared with the energy—saving behaviour zoologists have ascribed to caribou in encounters with non-hunting wolves (Canis lupus. When confronted by me, or upon getting my scent, caribou ran away on all occasions. Their flight was occasionally interrupted by short stops to look back in my direction, but would continue on all occasions until they were out of sight. This behaviour is inconsistent with the one ascribed to caribou by zoologists when the intruder is a wolf instead of a human. In their view, the caribou stop their flight soon after the wolf gives up the chase, and accordingly save energy owing to their ability to distinguish between hunting and non-hunting wolves. However, small bands of caribou, as well as single animals, have never been observed to behave in this manner. On the contrary, the behaviour of caribou in such encounters is known to follow the same pattern as in their encounters with humans. Energy—saving behaviour is, however, sometimes observed when caribou become inquisitive about something in their surroundings. They will then readily approach as well as try to get down-wind of the object. When the object does not induce fear, it may simply be ignored, or charged before the caribou calm down. The effect of this "confirming behaviour" is that energy which would otherwise have been spent in needless flights from non-predators is saved.

Dual-band frequency selective surface with large band separation and stable performance

International Nuclear Information System (INIS)

Zhou Hang; Qu Shao-Bo; Lin Bao-Qin; Wang Jia-Fu; Ma Hua; Zhang Jie-Qiu; Peng Wei-Dong; Bai Peng; Wang Xu-Hua; Xu Zhuo

2012-01-01

A new technique of designing a dual-band frequency selective surface with large band separation is presented. This technique is based on a delicately designed topology of L- and Ku-band microwave filters. The two band-pass responses are generated by a capacitively-loaded square-loop frequency selective surface and an aperture-coupled frequency selective surface, respectively. A Faraday cage is located between the two frequency selective surface structures to eliminate undesired couplings. Based on this technique, a dual-band frequency selective surface with large band separation is designed, which possesses large band separation, high selectivity, and stable performance under various incident angles and different polarizations. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Reentrant high-magnetic field superconductivity in a clean two-dimensional superconductor with shallow band

Science.gov (United States)

Koshelev, Alexei E.; Song, Kok Wee

We investigate the superconducting instability in the magnetic field for a clean two-dimensional multiple-band superconductor in the vicinity of the Lifshitz transition when one of the bands is very shallow. Due to a small number of carriers in this band, the quasiclassical Werthamer-Helfand approximation breaks down and Landau quantization has to be taken into account. We found that the transition temperature Tc 2 (H) has giant oscillations and is resonantly enhanced at the magnetic fields corresponding to full occupancy of the Landau levels in the shallow band. This enhancement is especially pronounced for the lowest Landau level. As a consequence, the reentrant superconducting regions in the temperature-field phase diagram emerge at low temperatures near the magnetic fields at which the chemical potential matches the Landau levels. These regions may be disconnected from the main low-field superconducting region. The specific behavior depends on the relative strength of the intraband and interband coupling constants and the effect is most pronounced when the interband coupling dominates. The Zeeman spin splitting reduces sizes of the reentrant regions and changes their location in the parameter space. The predicted behavior may realize in the gate-tuned FeSe monolayer. This work was supported by the Center for Emergent Superconductivity, an Energy Frontier Research Center funded by the US DOE, Office of Science, under Award No. DEAC0298CH1088.

Influence of defects on the absorption edge of InN thin films: The band gap value

Science.gov (United States)

Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

2007-07-01

We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

ADVANCED X-BAND TEST ACCELERATOR FOR HIGH BRIGHTNESS ELECTRON AND GAMMA RAY BEAMS

Energy Technology Data Exchange (ETDEWEB)

Marsh, R A; Anderson, S G; Barty, C P; Chu, T S; Ebbers, C A; Gibson, D J; Hartemann, F V; Adolphsen, C; Jongewaard, E N; Raubenheimer, T; Tantawi, S G; Vlieks, A E; Wang, J W

2010-05-12

In support of Compton scattering gamma-ray source efforts at LLNL, a multi-bunch test stand is being developed to investigate accelerator optimization for future upgrades. This test stand will enable work to explore the science and technology paths required to boost the current 10 Hz monoenergetic gamma-ray (MEGa-Ray) technology to an effective repetition rate exceeding 1 kHz, potentially increasing the average gamma-ray brightness by two orders of magnitude. Multiple bunches must be of exceedingly high quality to produce narrow-bandwidth gamma-rays. Modeling efforts will be presented, along with plans for a multi-bunch test stand at LLNL. The test stand will consist of a 5.5 cell X-band rf photoinjector, single accelerator section, and beam diagnostics. The photoinjector will be a high gradient standing wave structure, featuring a dual feed racetrack coupler. The accelerator will increase the electron energy so that the emittance can be measured using quadrupole scanning techniques. Multi-bunch diagnostics will be developed so that the beam quality can be measured and compared with theory. Design will be presented with modeling simulations, and layout plans.

Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction

KAUST Repository

Sun, Haiding; Park, Young Jae; Li, Kuang-Hui; Torres Castanedo, C. G.; Alowayed, Abdulmohsen; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

2017-01-01

Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a BAlN/AlGaN heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p with respect to the valence band maximum of BAlN and AlGaN layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 ± 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 ± 0.05 eV. The determination of the band alignment of the BAlN/AlGaN heterojunction facilitates the design of optical and electronic devices based on such junctions.

Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction

KAUST Repository

Sun, Haiding

2017-09-21

Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a BAlN/AlGaN heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p with respect to the valence band maximum of BAlN and AlGaN layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 ± 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 ± 0.05 eV. The determination of the band alignment of the BAlN/AlGaN heterojunction facilitates the design of optical and electronic devices based on such junctions.

H.E.S.S. discovery of very high energy γ-ray emission from PKS 0625-354

Science.gov (United States)

H.E.S.S. Collaboration; Abdalla, H.; Abramowski, A.; Aharonian, F.; Ait Benkhali, F.; Akhperjanian, A. G.; Andersson, T.; Angüner, E. O.; Arrieta, M.; Aubert, P.; Backes, M.; Balzer, A.; Barnard, M.; Becherini, Y.; Becker Tjus, J.; Berge, D.; Bernhard, S.; Bernlöhr, K.; Blackwell, R.; Böttcher, M.; Boisson, C.; Bolmont, J.; Bordas, P.; Bregeon, J.; Brun, F.; Brun, P.; Bryan, M.; Bulik, T.; Capasso, M.; Carr, J.; Casanova, S.; Cerruti, M.; Chakraborty, N.; Chalme-Calvet, R.; Chaves, R. C. G.; Chen, A.; Chevalier, J.; Chrétien, M.; Colafrancesco, S.; Cologna, G.; Condon, B.; Conrad, J.; Cui, Y.; Davids, I. D.; Decock, J.; Degrange, B.; Deil, C.; Devin, J.; deWilt, P.; Dirson, L.; Djannati-Ataï, A.; Domainko, W.; Donath, A.; Drury, L. O'C.; Dubus, G.; Dutson, K.; Dyks, J.; Dyrda, M.; Edwards, T.; Egberts, K.; Eger, P.; Ernenwein, J.-P.; Eschbach, S.; Farnier, C.; Fegan, S.; Fernandes, M. V.; Fiasson, A.; Fontaine, G.; Förster, A.; Funk, S.; Füßling, M.; Gabici, S.; Gajdus, M.; Gallant, Y. A.; Garrigoux, T.; Giavitto, G.; Giebels, B.; Glicenstein, J. F.; Gottschall, D.; Goyal, A.; Grondin, M.-H.; Hadasch, D.; Hahn, J.; Haupt, M.; Hawkes, J.; Heinzelmann, G.; Henri, G.; Hermann, G.; Hervet, O.; Hinton, J. A.; Hofmann, W.; Hoischen, C.; Holler, M.; Horns, D.; Ivascenko, A.; Jacholkowska, A.; Jamrozy, M.; Janiak, M.; Jankowsky, D.; Jankowsky, F.; Jingo, M.; Jogler, T.; Jouvin, L.; Jung-Richardt, I.; Kastendieck, M. A.; Katarzyński, K.; Katz, U.; Kerszberg, D.; Khélifi, B.; Kieffer, M.; King, J.; Klepser, S.; Klochkov, D.; Kluźniak, W.; Kolitzus, D.; Komin, Nu; Kosack, K.; Krakau, S.; Kraus, M.; Krayzel, F.; Krüger, P. P.; Laffon, H.; Lamanna, G.; Lau, J.; Lees, J.-P.; Lefaucheur, J.; Lefranc, V.; Lemière, A.; Lemoine-Goumard, M.; Lenain, J.-P.; Leser, E.; Lohse, T.; Lorentz, M.; Liu, R.; López-Coto, R.; Lypova, I.; Marandon, V.; Marcowith, A.; Mariaud, C.; Marx, R.; Maurin, G.; Maxted, N.; Mayer, M.; Meintjes, P. J.; Meyer, M.; Mitchell, A. M. W.; Moderski, R.; Mohamed, M.; Mohrmann, L.; Morâ, K.; Moulin, E.; Murach, T.; de Naurois, M.; Niederwanger, F.; Niemiec, J.; Oakes, L.; O'Brien, P.; Odaka, H.; Öttl, S.; Ohm, S.; Ostrowski, M.; Oya, I.; Padovani, M.; Panter, M.; Parsons, R. D.; Pekeur, N. W.; Pelletier, G.; Perennes, C.; Petrucci, P.-O.; Peyaud, B.; Piel, Q.; Pita, S.; Poon, H.; Prokhorov, D.; Prokoph, H.; Pühlhofer, G.; Punch, M.; Quirrenbach, A.; Raab, S.; Reimer, A.; Reimer, O.; Renaud, M.; de los Reyes, R.; Rieger, F.; Romoli, C.; Rosier-Lees, S.; Rowell, G.; Rudak, B.; Rulten, C. B.; Sahakian, V.; Salek, D.; Sanchez, D. A.; Santangelo, A.; Sasaki, M.; Schlickeiser, R.; Schüssler, F.; Schulz, A.; Schwanke, U.; Schwemmer, S.; Settimo, M.; Seyffert, A. S.; Shafi, N.; Shilon, I.; Simoni, R.; Sol, H.; Spanier, F.; Spengler, G.; Spies, F.; Stawarz, Ł.; Steenkamp, R.; Stegmann, C.; Stinzing, F.; Stycz, K.; Sushch, I.; Tavernet, J.-P.; Tavernier, T.; Taylor, A. M.; Terrier, R.; Tibaldo, L.; Tiziani, D.; Tluczykont, M.; Trichard, C.; Tuffs, R.; Uchiyama, Y.; van der Walt, D. J.; van Eldik, C.; van Rensburg, C.; van Soelen, B.; Vasileiadis, G.; Veh, J.; Venter, C.; Viana, A.; Vincent, P.; Vink, J.; Voisin, F.; Völk, H. J.; Vuillaume, T.; Wadiasingh, Z.; Wagner, S. J.; Wagner, P.; Wagner, R. M.; White, R.; Wierzcholska, A.; Willmann, P.; Wörnlein, A.; Wouters, D.; Yang, R.; Zabalza, V.; Zaborov, D.; Zacharias, M.; Zanin, R.; Zdziarski, A. A.; Zech, A.; Zefi, F.; Ziegler, A.; Żywucka, N.

2018-05-01

PKS 0625-354 (z = 0.055) was observed with the four High Energy Stereoscopic System (H.E.S.S.) telescopes in 2012 during 5.5 h. The source was detected above an energy threshold of 200 GeV at a significance level of 6.1σ. No significant variability is found in these observations. The source is well described with a power-law spectrum with photon index Γ = 2.84 ± 0.50stat ± 0.10syst and normalization (at E0 = 1.0 TeV) N0(E0) = (0.58 ± 0.22stat ± 0.12syst) × 10-12 TeV-1 cm-2 s-1. Multiwavelength data collected with Fermi-LAT, Swift-XRT, Swift-UVOT, ATOM and WISE are also analysed. Significant variability is observed only in the Fermi-LAT γ-ray and Swift-XRT X-ray energy bands. Having a good multiwavelength coverage from radio to very high energy, we performed a broad-band modelling from two types of emission scenarios. The results from a one zone lepto-hadronic and a multizone leptonic models are compared and discussed. On the grounds of energetics, our analysis favours a leptonic multizone model. Models associated to the X-ray variability constraint support previous results, suggesting a BL Lac nature of PKS 0625-354 with, however, a large-scale jet structure typical of a radio galaxy.

Multi-MW K-Band Harmonic Multiplier: RF Source For High-Gradient Accelerator R & D

Science.gov (United States)

Solyak, N. A.; Yakovlev, V. P.; Kazakov, S. Yu.; Hirshfield, J. L.

2009-01-01

A preliminary design is presented for a two-cavity harmonic multiplier, intended as a high-power RF source for use in experiments aimed at developing high-gradient structures for a future collider. The harmonic multiplier is to produce power at selected frequencies in K-band (18-26.5 GHz) using as an RF driver an XK-5 S-band klystron (2.856 GHz). The device is to be built with a TE111 rotating mode input cavity and interchangeable output cavities running in the TEn11 rotating mode, with n = 7,8,9 at 19.992, 22.848, and 25.704 GHz. An example for a 7th harmonic multiplier is described, using a 250 kV, 20 A injected laminar electron beam; with 10 MW of S-band drive power, 4.7 MW of 20-GHz output power is predicted. Details are described of the magnetic circuit, cavities, and output coupler.

Analysis of high-frequency energy in long-term average spectra of singing, speech, and voiceless fricatives

Science.gov (United States)

Monson, Brian B.; Lotto, Andrew J.; Story, Brad H.

2012-01-01

The human singing and speech spectrum includes energy above 5 kHz. To begin an in-depth exploration of this high-frequency energy (HFE), a database of anechoic high-fidelity recordings of singers and talkers was created and analyzed. Third-octave band analysis from the long-term average spectra showed that production level (soft vs normal vs loud), production mode (singing vs speech), and phoneme (for voiceless fricatives) all significantly affected HFE characteristics. Specifically, increased production level caused an increase in absolute HFE level, but a decrease in relative HFE level. Singing exhibited higher levels of HFE than speech in the soft and normal conditions, but not in the loud condition. Third-octave band levels distinguished phoneme class of voiceless fricatives. Female HFE levels were significantly greater than male levels only above 11 kHz. This information is pertinent to various areas of acoustics, including vocal tract modeling, voice synthesis, augmentative hearing technology (hearing aids and cochlear implants), and training/therapy for singing and speech. PMID:22978902

Potential energy surface, dipole moment surface and the intensity calculations for the 10 μm, 5 μm and 3 μm bands of ozone

Science.gov (United States)

Polyansky, Oleg L.; Zobov, Nikolai F.; Mizus, Irina I.; Kyuberis, Aleksandra A.; Lodi, Lorenzo; Tennyson, Jonathan

2018-05-01

Monitoring ozone concentrations in the Earth's atmosphere using spectroscopic methods is a major activity which undertaken both from the ground and from space. However there are long-running issues of consistency between measurements made at infrared (IR) and ultraviolet (UV) wavelengths. In addition, key O3 IR bands at 10 μm, 5 μm and 3 μm also yield results which differ by a few percent when used for retrievals. These problems stem from the underlying laboratory measurements of the line intensities. Here we use quantum chemical techniques, first principles electronic structure and variational nuclear-motion calculations, to address this problem. A new high-accuracy ab initio dipole moment surface (DMS) is computed. Several spectroscopically-determined potential energy surfaces (PESs) are constructed by fitting to empirical energy levels in the region below 7000 cm-1 starting from an ab initio PES. Nuclear motion calculations using these new surfaces allow the unambiguous determination of the intensities of 10 μm band transitions, and the computation of the intensities of 10 μm and 5 μm bands within their experimental error. A decrease in intensities within the 3 μm is predicted which appears consistent with atmospheric retrievals. The PES and DMS form a suitable starting point both for the computation of comprehensive ozone line lists and for future calculations of electronic transition intensities.

Nonequilibrium Green's function formulation of quantum transport theory for multi-band semiconductors

International Nuclear Information System (INIS)

Zhao, Peiji; Horing, Norman J.M.; Woolard, Dwight L.; Cui, H.L.

2003-01-01

We present a nonequilibrium Green's function formulation of many-body quantum transport theory for multi-band semiconductor systems with a phonon bath. The equations are expressed exactly in terms of single particle nonequilibrium Green's functions and self-energies, treating the open electron-hole system in weak interaction with the bath. A decoupling technique is employed to separate the individual band Green's function equations of motion from one another, with the band-band interaction effects embedded in ''cross-band'' self-energies. This nonequilibrium Green's function formulation of quantum transport theory is amenable to solution by parallel computing because of its formal decoupling with respect to inter-band interactions. Moreover, this formulation also permits coding the simulator of an n-band semiconductor in terms of that for an (n-1)-band system, in step with the current tendency and development of programming technology. Finally, the focus of these equations on individual bands provides a relatively direct route for the determination of carrier motion in energy bands, and to delineate the influence of intra- and inter-band interactions. A detailed description is provided for three-band semiconductor systems

Analysis of the quasi-continuum band emitted by highly ionised tungsten atoms in the 4-7 nm range

International Nuclear Information System (INIS)

Madeira, T.I.; Amorim, P.; Marques, J.P.; Parente, F.; Indelicato, P.

2013-01-01

For the next upcoming generation of fusion experiments, such as ITER,Tungsten has been chosen as the materials for plasma facing components. Spectra emitted by highly ionized tungsten atoms from magnetically confined plasmas show a common feature: a narrow structured quasi-continuum emission band most prominent in the range 4-7 nm, which accounts for 40-80% of the radiated power. This band has been fairly well explained by unresolved transitions from groups 4d-4p, 4f-4d (Δn = 0) and 5d-4f, 5g-4f and 5p-4d (Δn = 1). In this work we use a Multi-Configuration Dirac-Fock code in Breit self-consistent field mode to compute level energies and transition probabilities for W 27+ to W 37+ ions contributing to this emission band. Intra-shell correlation was introduced in the calculation for both initial and final states and all dipole and quadrupole radiative transitions have been considered. The wavefunctions in the initial and final states are optimized separately and the resulting non-orthogonality effect is fully taken into account. The importance of some satellite lines was assessed. Together with the ionic distributions obtained by using the FLYCHK application and assuming that the initial states population depends statistically on the temperature we were able to synthesize plasma emission spectrum profiles for several electron temperatures. (authors)

First determination of the valence band dispersion of CH3NH3PbI3 hybrid organic-inorganic perovskite

Science.gov (United States)

Lee, Min-I.; Barragán, Ana; Nair, Maya N.; Jacques, Vincent L. R.; Le Bolloc'h, David; Fertey, Pierre; Jemli, Khaoula; Lédée, Ferdinand; Trippé-Allard, Gaëlle; Deleporte, Emmanuelle; Taleb-Ibrahimi, Amina; Tejeda, Antonio

2017-07-01

The family of hybrid organic-inorganic halide perovskites is in the limelight because of their recently discovered high photovoltaic efficiency. These materials combine photovoltaic energy conversion efficiencies exceeding 22% and low-temperature and low-cost processing in solution; a breakthrough in the panorama of renewable energy. Solar cell operation relies on the excitation of the valence band electrons to the conduction band by solar photons. One factor strongly impacting the absorption efficiency is the band dispersion. The band dispersion has been extensively studied theoretically, but no experimental information was available. Herein, we present the first experimental determination of the valence band dispersion of methylammonium lead halide in the tetragonal phase. Our results pave the way for contrasting the electronic hopping or the electron effective masses in different theories by comparing to our experimental bands. We also show a significant broadening of the electronic states, promoting relaxed conditions for photon absorption, and demonstrate that the tetragonal structure associated to the octahedra network distortion below 50 °C induces only a minor modification of the electronic bands, with respect to the cubic phase at high temperature, thus minimizing the impact of the cubic-tetragonal transition on solar cell efficiencies.

An algebraic description of identical bands and of high-spin quadrupole collectivity

International Nuclear Information System (INIS)

Guidry, M.W.

1993-01-01

The Fermion Dynamical Symmetry Model (FDSM) has been used to describe electric quadrupole transition rates and static moments at high angular momentum in deformed nuclei. A quantitative description of these phenomena appears possible by these means. The formalism accounts naturally for those cases where significant reductions in B(E2) values are accompanied by relatively constant moments of inertia. A discussion of identical bands as being due to a dynamical symmetry will be given. The empirical properties of these bands and general principles of group theory will be used to place constraints on an acceptable symmetry. A model that represents a minimal implementation of these criteria will be presented

Getting nanometric MoO3 through chemical synthesis and high energy milling

International Nuclear Information System (INIS)

Santos-Beltrán, M.; Paraguay-Delgado, F.; Santos-Beltrán, A.; Fuentes, L.

2015-01-01

The effects of high energy mechanical milling (HEMM) were studied on the microstructure and optical properties of MoO 3 for hexagonal and orthorhombic phases. Employing HEMM was possible change particle size as a function of mechanical milling time, as well as the small quantity transformation percentage from hexagonal to orthorhombic phase. The relationship between microstrain and optical properties generated was studied. The electronic structures were calculated using the Density Functional Theory (DFT); to determinate partial density of state (PDOS). Band gap structure calculations show a good correlation between experimental and simulated data. The approximated values of microstrain, particle size, lattice parameters and oxygen vacancies were obtained employing the Rietveld refinement of X-ray diffraction patterns. Samples were characterized by electron microscopy techniques, surface area analysis (BET), thermal-gravimetric analysis (TGA), differential scanning calorimetry (DSC) and ultraviolet–visible spectroscopy (UV–Vis). It was possible, obtain particles with size below 40 nm by 30 min milling. - Graphical abstract: Orthorhombic phase, SEM image, SAED before milling, milling NPs, Particle size and band gap variation by milling time. - Highlights: • MoO 3 with hexagonal and orthorhombic structures was synthesized selectively. • By milling short time (30 m), it was possible get 40 nm diameter particles. • The band gap decrease for nanoparticles, then corroborated by simulation. • MoO 3 nanoparticles get high surface area for new technologic applications

Design of a high repetition rate S-band photocathode gun

International Nuclear Information System (INIS)

Han Janghui; Cox, Matthew; Huang, Houcheng; Pande, Shivaji

2011-01-01

Photocathode RF guns have been developed in many laboratories for generating high quality electron beams for free-electron lasers based on linear accelerators. Such guns can generate electron beams with an exceptionally high peak current as well as a small transverse emittance. Their applications have been recently expanded for ultrafast electron diffraction, coherent terahertz radiation, and X-ray or γ-ray radiation by Compton scattering. In this paper, we design an S-band normal-conducting gun with capabilities of high quality beam generation and high repetition rate operation. The RF design and thermal analysis of the gun cavity and coupler are introduced. Optimal position of the gun focusing solenoid for low emittance beam generation is found by performing particle tracking simulations. Then, the gun system is designed to be able to afford the optimal solenoid position. The cooling-water channel surrounding the gun cavity and coupler is designed and analyzed numerically. The pressure in the gun is simulated with a vacuum model containing the detailed inner structure of the gun. An injector for a free-electron laser application is designed by using this gun and the beam dynamics simulation is shown. A cold test with a prototype gun for confirmation of the RF design is reported. - Highlights: → We design an S-band gun for low emittance beam generation and high repetition rate operation. → The RF design and thermal analysis of the gun cavity and coupler are studied. → An FEL injector is designed by using this gun and the beam dynamics simulation is shown. → A cold test with a prototype gun for confirmation of the RF design is reported.

Underlying physics of identical odd- and even-mass bands in normally deformed rare-earth nuclei

International Nuclear Information System (INIS)

Yu Lei; Liu Shuxin; Lei Yian; Zeng Jinyan

2001-01-01

The microscopic mechanism of the identical odd- and even-mass number nuclear bands in normally deformed rare-earth nuclei was investigated using the particle-number conserving (PNC) method for treating nuclear pairing correlation. It was found that the odd particle of an odd-A identical band always occupied a cranked low j and high Ω Nilsson orbital (e.g. proton [404]7/2, [402]5/2. On the contrary, if the odd particle occupies an intruder high j orbital (e.g. neutron [633]7/2, proton[514]9/2), the moment of inertia of the odd-A band was much larger than that of neighboring even-even ground state band. The observed variation of moment of inertia (below band crossing) was reproduced quite well by the PNC calculation, in which no free parameter was involved. The strengths of monopole and Y 20 quadrupole interactions were determined by the experimental odd-even differences in binding energy and band head moment of inertia

Computational Design of Flat-Band Material

Science.gov (United States)

Hase, I.; Yanagisawa, T.; Kawashima, K.

2018-02-01

Quantum mechanics states that hopping integral between local orbitals makes the energy band dispersive. However, in some special cases, there are bands with no dispersion due to quantum interference. These bands are called as flat band. Many models having flat band have been proposed, and many interesting physical properties are predicted. However, no real compound having flat band has been found yet despite the 25 years of vigorous researches. We have found that some pyrochlore oxides have quasi-flat band just below the Fermi level by first principles calculation. Moreover, their valence bands are well described by a tight-binding model of pyrochlore lattice with isotropic nearest neighbor hopping integral. This model belongs to a class of Mielke model, whose ground state is known to be ferromagnetic with appropriate carrier doping and on-site repulsive Coulomb interaction. We have also performed a spin-polarized band calculation for the hole-doped system from first principles and found that the ground state is ferromagnetic for some doping region. Interestingly, these compounds do not include magnetic element, such as transition metal and rare-earth elements.

Chalcogenophene comonomer comparison in small band gap diketopyrrolopyrrole-based conjugated polymers for high-performing field-effect transistors and organic solar cells

KAUST Repository

Ashraf, Raja Shahid

2015-01-28

The design, synthesis, and characterization of a series of diketopyrrolopyrrole-based copolymers with different chalcogenophene comonomers (thiophene, selenophene, and tellurophene) for use in field-effect transistors and organic photovoltaic devices are reported. The effect of the heteroatom substitution on the optical, electrochemical, and photovoltaic properties and charge carrier mobilities of these polymers is discussed. The results indicate that by increasing the size of the chalcogen atom (S < Se < Te), polymer band gaps are narrowed mainly due to LUMO energy level stabilization. In addition, the larger heteroatomic size also increases intermolecular heteroatom-heteroatom interactions facilitating the formation of polymer aggregates leading to enhanced field-effect mobilities of 1.6 cm2/(V s). Bulk heterojunction solar cells based on the chalcogenophene polymer series blended with fullerene derivatives show good photovoltaic properties, with power conversion efficiencies ranging from 7.1-8.8%. A high photoresponse in the near-infrared (NIR) region with excellent photocurrents above 20 mA cm-2 was achieved for all polymers, making these highly efficient low band gap polymers promising candidates for use in tandem solar cells. (Graph Presented).

Accounting for many-body correlation effects in the calculation of the valence band photoelectron emission spectra of ferromagnets

International Nuclear Information System (INIS)

Minar, J.; Chadov, S.; Ebert, H.; Chioncel, L.; Lichtenstein, A.; De Nadai, C.; Brookes, N.B.

2005-01-01

The influence of dynamical correlation effects on the valence band photoelectron emission of ferromagnetic Fe, Co and Ni has been investigated. Angle-resolved as well as angle-integrated valence band photoelectron emission spectra were calculated on the basis of the one-particle Green's function, which was obtained by using the fully relativistic Korringa-Kohn-Rostoker method. The correlation effects have been included in terms of the electronic self-energy which was calculated self-consistently within Dynamical Mean-Field Theory (DMFT). In addition a theoretical approach to calculate high-energy angle-resolved valence band photoelectron emission spectra is presented

Valence band structure of InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy semiconductors calculated using valence band anticrossing model.

Science.gov (United States)

Samajdar, D P; Dhar, S

2014-01-01

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

Nature of the fundamental band gap in GaNxP1-x alloys

International Nuclear Information System (INIS)

Shan, W.; Walukiewicz, W.; Yu, K. M.; Wu, J.; Ager, J. W. III; Haller, E. E.; Xin, H. P.; Tu, C. W.

2000-01-01

The optical properties of GaN x P 1-x alloys (0.007≤x≤0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaN x P 1-x at energy below the indirect Γ V -X C transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulation signals associated with the absorption edges in GaN x P 1-x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum. (c) 2000 American Institute of Physics

Electron currents associated with an auroral band

International Nuclear Information System (INIS)

Spiger, R.J.; Anderson, H.R.

1975-01-01

Measurements of electron pitch angle distributions and energy spectra over a broad auroral band were used to calculate net electric current carried by auroral electrons in the vicinity of the band. The particle energy spectrometers were carried by a Nike-Tomahawk rocket launched from Poker Flat, Alaska, at 0722 UT on February 25, 1972. Data are presented which indicate the existence of upward field-aligned currents of electrons in the energy range 0.5-20 keV. The spatial relationship of these currents to visual structure of the auroral arc and the characteristics of the electrons carrying the currents are discussed

Electron currents associated with an auroral band

Science.gov (United States)

Spiger, R. J.; Anderson, H. R.

1975-01-01

Measurements of electron pitch angle distributions and energy spectra over a broad auroral band were used to calculate net electric current carried by auroral electrons in the vicinity of the band. The particle energy spectrometers were carried by a Nike-Tomahawk rocket launched from Poker Flat, Alaska, at 0722 UT on February 25, 1972. Data are presented which indicate the existence of upward field-aligned currents of electrons in the energy range 0.5-20 keV. The spatial relationship of these currents to visual structure of the auroral arc and the characteristics of the electrons carrying the currents are discussed.

Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

Science.gov (United States)

Pandiyan, Rajesh; Oulad Elhmaidi, Zakaria; Sekkat, Zouheir; Abd-lefdil, Mohammed; El Khakani, My Ali

2017-02-01

We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu2ZnSnS4 (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (Ta), but their crystallinity is much improved for Ta ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with Ta (from ∼14 nm at RT to 70 nm at Ta = 500 °C with a value around 40 nm for Ta = 300-400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV-vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at Ta = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS spectroscopies to determine their chemical bondings, the position of their valence band maximum (relative to Fermi level), and their work function values. This enabled us to sketch out, as accurately as possible, the band alignment of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials.

Spins of superdeformed rotational bands in Tl isotopes

Energy Technology Data Exchange (ETDEWEB)

Dadwal, Anshul; Mittal, H.M. [Dr. B.R. Ambedkar National Institute of Technology, Jalandhar (India)

2017-01-15

The two-parameter model defined for even-even nuclei viz. soft-rotor formula is used to assign the band-head spin of the 17 rotational bands in Tl isotopes. The least-squares fitting method is employed to obtain the spins of these bands in the A ∝ 190 mass region. The calculated transition energies are found to depend sensitively on the proposed spin. Whenever a correct spin assignment is made, the calculated and experimental transition energies coincide very well. The dynamic moment of inertia is also calculated and its variation with rotational frequency is explored. (orig.)

A High-Speed Power-Line Communication System with Band-Limited OQAM Based Multi-Carrier Transmission

Science.gov (United States)

Kawabata, Naohiro; Koga, Hisao; Muta, Osamu; Akaiwa, Yoshihiko

As a method to realize a high-speed communication in the home network, the power-line communication (PLC) technique is known. A problem of PLC is that leakage radiation interferes with existing systems. When OFDM is used in a PLC system, the leakage radiation is not sufficiently reduced, even if the subcarriers corresponding to the frequency-band of the existing system are never used, because the signal is not strictly band-limited. To solve this problem, each subcarrier must be band-limited. In this paper, we apply the OQAM based multi-carrier transmission (OQAM-MCT) to a high-speed PLC system, where each subcarrier is individually band-limited. We also propose a pilot-symbol sequence suitable for frequency offset estimation, symbol-timing detection and channel estimation in the OQAM-MCT system. In this method, the pilot signal-sequence consists of a repeated series of the same data symbol. With this method, the pilot sequence approximately becomes equivalent to OFDM sequence and therefore existing pilot-assisted methods for OFDM are also applicable to OQAM-MCT system. Computer simulation results show that the OQAM-MCT system achieves both good transmission rate performance and low out-of-band radiation in PLC channels. It is also shown that the proposed pilot-sequence improves frequency offset estimation, symbol-timing detection and channel estimation performance as compared with the case of using pseudo-noise sequence.

Why high energy physics

International Nuclear Information System (INIS)

Diddens, A.N.; Van de Walle, R.T.

1981-01-01

An argument is presented for high energy physics from the point of view of the practitioners. Three different angles are presented: The cultural consequence and scientific significance of practising high energy physics, the potential application of the results and the discovery of high energy physics, and the technical spin-offs from the techniques and methods used in high energy physics. (C.F.)

The two bands model for the high temperature conductivity of the binary rare earth alloys

International Nuclear Information System (INIS)

Borgiel, W.

1983-09-01

The formula for the high temperature spin disorder resistivity for the concentrated Asub(1-x)Bsub(x)C alloys where A,B is an element of Rare Earth (RE) is determined on the basis of two bands model and the coherent potential approximation (CPA). The conductivity given by the 5d bands coming from the RE compounds has been taken into account

Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

International Nuclear Information System (INIS)

Malashchonak, M.V.; Streltsov, E.A.; Mazanik, A.V.; Kulak, A.I.; Poznyak, S.K.; Stroyuk, O.L.; Kuchmiy, S.Ya.; Gaiduk, P.I.

2015-01-01

Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m 2 g −1 ) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Y max = 90%; 0.1 M Na 2 S + 0.1 M Na 2 SO 3 ), but also in the sub-band-gap (SBG) range (Y max = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100 mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (E U ) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (E U = 93 mV at SILAR cycle number N = 5), then lowers somewhat (E U = 73 mV at N = 10) and remains steady in the range of N from 20 to 300 (E U = 67 ± 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures. - Highlights: • ZnO/CdS films demonstrate high quantum efficiency (25%) for sub-band-gap transitions. • Onset photocurrent potentials for sub-band-gap processes differ than those for band-gap ones. • Sub-band-gap transitions are caused by band-tail states in CdS nanoparticles

Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Malashchonak, M.V., E-mail: che.malasche@gmail.com [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A., E-mail: streltea@bsu.by [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Mazanik, A.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Poznyak, S.K. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Stroyuk, O.L., E-mail: stroyuk@inphyschem-nas.kiev.ua [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Kuchmiy, S.Ya. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Gaiduk, P.I. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus)

2015-08-31

Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m{sup 2}g{sup −1}) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Y{sub max} = 90%; 0.1 M Na{sub 2}S + 0.1 M Na{sub 2}SO{sub 3}), but also in the sub-band-gap (SBG) range (Y{sub max} = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100 mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (E{sub U}) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (E{sub U} = 93 mV at SILAR cycle number N = 5), then lowers somewhat (E{sub U} = 73 mV at N = 10) and remains steady in the range of N from 20 to 300 (E{sub U} = 67 ± 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures. - Highlights: • ZnO/CdS films demonstrate high quantum efficiency (25%) for sub-band-gap transitions. • Onset photocurrent potentials for sub-band-gap processes differ than those for band-gap ones. • Sub-band-gap transitions are caused by band-tail states in CdS nanoparticles.

Electronic structure of the Ga1-xCrxN studied by high-energy photoemission spectroscopy

International Nuclear Information System (INIS)

Kim, J.J.; Makino, H.; Hanada, T.; Cho, M.W.; Yao, T.; Takata, Y.; Nishino, Y.; Tamasaku, K.; Ishikawa, T.; Shin, S.; Kobayashi, K.; Ikenaga, E.; Yabashi, M.; Yamamoto, T.

2004-01-01

Full text: It is predicted based on hole-mediated ferromagnetism (FM) that GaMnN may have Curie temperature (Tc) higher than room temperature if doped with high hole concentration (ca 10 20 cm -3 ). The hole-mediated ferromagnetism (FM) can produce reliable estimate of Tc for diluted magnetic semiconductor (DMS) such as GaMnAs due to the shallow Mn-associated energy states in the GaAs system. Since the energy states of doped transition metals exist as a deep level in a wide band semiconductor like GaN and carriers are localized in these states, different mechanisms for magnetism will play a role in GaN rather than the hole-mediated one. This conjecture is partly supported by the recent report of FM in n-type GaN doped with Cr, although the mechanism of the observed FM has not been elucidated yet. In order to get insight into the mechanism of the FM, we have studied the electronic structure of GaN doped with Cr exploiting bulk-sensitive hard X-ray photoemission spectroscopy at a photon energy of 5.95keV at SPring-8. We have observed that Cr-doping does introduce new electronic levels in the band gap and causes some change in the valence band structure. Based on the first principle calculation, the Cr-associated electronic levels in the band gap are assigned to nonbonding and anti-bonding d states, the latter of which pins the Fermi level, while the change of the valence band suggests that the Ga 4s originated states are significantly modified through hybridization with the Cr 3d orbital. The present result evidences that the Ga valence electrons are considerably modified through the interaction with second neighbor Cr atoms. Such hybridization between Ga 4s and Cr 3d may play a significant role in the observed ferromagnetism in Ga 1-x Cr x N

Synthesis of copper quantum dots by chemical reduction method and tailoring of its band gap

Directory of Open Access Journals (Sweden)

P. G. Prabhash

2016-05-01

Full Text Available Metallic copper nano particles are synthesized with citric acid and CTAB (cetyltrimethylammonium bromide as surfactant and chlorides as precursors. The particle size and surface morphology are analyzed by High Resolution Transmission Electron Microscopy. The average size of the nano particle is found to be 3 - 10 nm. The optical absorption characteristics are done by UV-Visible spectrophotometer. From the Tauc plots, the energy band gaps are calculated and because of their smaller size the particles have much higher band gap than the bulk material. The energy band gap is changed from 3.67 eV to 4.27 eV in citric acid coated copper quantum dots and 4.17 eV to 4.52 eV in CTAB coated copper quantum dots.

High-Energy Anomaly in the Angle-Resolved Photoemission Spectra of Nd2-xCexCuO4: Evidence for a Matrix Element Effect

Science.gov (United States)

Rienks, E. D. L.; ńrrälä, M.; Lindroos, M.; Roth, F.; Tabis, W.; Yu, G.; Greven, M.; Fink, J.

2014-09-01

We use polarization-dependent angle-resolved photoemission spectroscopy (ARPES) to study the high-energy anomaly (HEA) in the dispersion of Nd2-xCexCuO4, x =0.123. We find that at particular photon energies the anomalous, waterfall-like dispersion gives way to a broad, continuous band. This suggests that the HEA is a matrix element effect: it arises due to a suppression of the intensity of the broadened quasiparticle band in a narrow momentum range. We confirm this interpretation experimentally, by showing that the HEA appears when the matrix element is suppressed deliberately by changing the light polarization. Calculations of the matrix element using atomic wave functions and simulation of the ARPES intensity with one-step model calculations provide further evidence for this scenario. The possibility to detect the full quasiparticle dispersion further allows us to extract the high-energy self-energy function near the center and at the edge of the Brillouin zone.

High-energy anomaly in the angle-resolved photoemission spectra of Nd(2-x)Ce(x)CuO₄: evidence for a matrix element effect.

Science.gov (United States)

Rienks, E D L; Ärrälä, M; Lindroos, M; Roth, F; Tabis, W; Yu, G; Greven, M; Fink, J

2014-09-26

We use polarization-dependent angle-resolved photoemission spectroscopy (ARPES) to study the high-energy anomaly (HEA) in the dispersion of Nd(2-x)Ce(x)CuO₄, x=0.123. We find that at particular photon energies the anomalous, waterfall-like dispersion gives way to a broad, continuous band. This suggests that the HEA is a matrix element effect: it arises due to a suppression of the intensity of the broadened quasiparticle band in a narrow momentum range. We confirm this interpretation experimentally, by showing that the HEA appears when the matrix element is suppressed deliberately by changing the light polarization. Calculations of the matrix element using atomic wave functions and simulation of the ARPES intensity with one-step model calculations provide further evidence for this scenario. The possibility to detect the full quasiparticle dispersion further allows us to extract the high-energy self-energy function near the center and at the edge of the Brillouin zone.

Highly aqueous soluble CaF2:Ce/Tb nanocrystals: effect of surface functionalization on structural, optical band gap, and photoluminescence properties.

Science.gov (United States)

Ansari, Anees A; Parchur, Abdul K; Kumar, Brijesh; Rai, S B

2016-12-01

The design of nanostructured materials with highly stable water-dispersion and luminescence efficiency is an important concern in nanotechnology and nanomedicine. In this paper, we described the synthesis and distinct surface modification on the morphological structure and optical (optical absorption, band gap energy, excitation, emission, decay time, etc.) properties of highly crystalline water-dispersible CaF 2 :Ce/Tb nanocrystals (core-nanocrystals). The epitaxial growth of inert CaF 2 and silica shell, respectively, on their surface forming as CaF 2 :Ce/Tb@CaF 2 (core/shell) and CaF 2 :Ce/Tb@CaF 2 @SiO 2 (core/shell/SiO 2 ) nanoarchitecture. X-ray diffraction and transmission electron microscope image shows that the nanocrystals were in irregular spherical phase, highly crystalline (~20 nm) with narrow size distribution. The core/shell nanocrystals confirm that the surface coating is responsible in the change of symmetrical nanostructure, which was determined from the band gap energy and luminescent properties. It was found that an inert inorganic shell formation effectively enhances the luminescence efficiency and silica shell makes the nanocrystals highly water-dispersible. In addition, Ce 3+ /Tb 3+ -co-doped CaF 2 nanocrystals show efficient energy transfer from Ce 3+ to Tb 3+ ion and strong green luminescence of Tb 3+ ion at 541 nm( 5 D 4 → 7 F 5 ). Luminescence decay curves of core and core/shell nanocrystals were fitted using mono and biexponential equations, and R 2 regression coefficient criteria were used to discriminate the goodness of the fitted model. The lifetime values for the core/shell nanocrystals are higher than core-nanocrystals. Considering the high stable water-dispersion and intensive luminescence emission in the visible region, these luminescent core/shell nanocrystals could be potential candidates for luminescent bio-imaging, optical bio-probe, displays, staining, and multianalyte optical sensing. A newly designed CaF 2 :Ce

Band connectivity for topological quantum chemistry: Band structures as a graph theory problem

Science.gov (United States)

Bradlyn, Barry; Elcoro, L.; Vergniory, M. G.; Cano, Jennifer; Wang, Zhijun; Felser, C.; Aroyo, M. I.; Bernevig, B. Andrei

2018-01-01

The conventional theory of solids is well suited to describing band structures locally near isolated points in momentum space, but struggles to capture the full, global picture necessary for understanding topological phenomena. In part of a recent paper [B. Bradlyn et al., Nature (London) 547, 298 (2017), 10.1038/nature23268], we have introduced the way to overcome this difficulty by formulating the problem of sewing together many disconnected local k .p band structures across the Brillouin zone in terms of graph theory. In this paper, we give the details of our full theoretical construction. We show that crystal symmetries strongly constrain the allowed connectivities of energy bands, and we employ graph theoretic techniques such as graph connectivity to enumerate all the solutions to these constraints. The tools of graph theory allow us to identify disconnected groups of bands in these solutions, and so identify topologically distinct insulating phases.

Band structure engineering for ultracold quantum gases in optical lattices

International Nuclear Information System (INIS)

Weinberg, Malte

2014-01-01

The energy band structure fundamentally influences the physical properties of a periodic system. It may give rise to highly exotic phenomena in yet uncharted physical regimes. Ultracold quantum gases in optical lattices provide an ideal playground for the investigation of a large variety of such intriguing effects. Experiments presented here address several issues that require the systematic manipulation of energy band structures in optical lattices with diverse geometries. These artificial crystals of light, generated by interfering laser beams, allow for an unprecedented degree of control over a wide range of parameters. A major part of this thesis employs time-periodic driving to engineer tunneling matrix elements and, thus, the dispersion relation for bosonic quantum gases in optical lattices. Resonances emerging in the excitation spectrum due to the particularly strong forcing can be attributed to multi-photon transitions that are investigated systematically. By changing the sign of the tunneling, antiferromagnetic spin-spin interactions can be emulated. In a triangular lattice this leads to geometrical frustration with a doubly degenerate ground state as the simultaneous minimization of competing interactions is inhibited. Moreover, complex-valued tunneling matrix elements can be generated with a suitable breaking of time-reversal symmetry in the driving scheme. The associated Peierls phases mimic the presence of an electromagnetic vector gauge potential acting on charged particles. First proof-of-principle experiments reveal an excellent agreement with theoretical calculations. In the weakly interacting superfluid regime, these artificial gauge fields give rise to an Ising-XY model with tunable staggered magnetic fluxes and a complex interplay between discrete and continuous symmetries. A thermal phase transition from an ordered ferromagnetic- to an unordered paramagnetic state could be observed. In the opposite hard-core boson limit of strong interactions

Energies of conduction bands in dielectric liquids

International Nuclear Information System (INIS)

Holroyd, R.

1975-01-01

The properties of excess electrons in non-polar liquids depend on the relative energies of the trapped and conducting states. We have measured the energies of the conducting states, denoted V 0 , for about twenty non-polar liquids. Two methods were used: In one the work functions of metals immersed in the liquid were measured. In the other, solutes (TMPD) were photoionized in the liquid and V 0 calculated from the wavelength at which ionization onsets occur. A wide variation in conduction state energies is observed from a high of +0.21 eV for tetradecane to a low of --0.60 eV for tetramethylsilane. In general V 0 shifts to more negative values with increasing molecular symmetry, and correlates well with electron mobility. The photoionization results indicate that V 0 decreases with increasing temperature. In mixtures V 0 is linearly dependent on mole fraction. It was found empirically for n-hexane-neopentane mixtures that μ = 0.34 exp [--15.2(V 0 )]. This equation relating V 0 to the electron mobility also applies approximately to pure hydrocarbons. Thus the role of the conduction state energy in influencing electron mobilities and photoionization onsets is established and recent evidence indicates V 0 also influences the rates of electron reactions in these liquids

Identical and shifted identical bands

International Nuclear Information System (INIS)

Dodder, R.S; Jones, E.F.; Hamilton, J.H.

1997-01-01

Spontaneous fission of 252 Cm was studied with 72 large Compton suppressed Ge detectors in Gamma sphere. New isotopes 160 Sm and 162 Gd were identified. Through X-ray-γ and γ-γ-γ) coincidence measurements, level energies were established to spins 14 + to 20 + in 152 , 154 156 60 Nd 92 94 96 , 156 , 158 , 160 62 Sm 94 , 96 , 98 , and 160 , 162 64 Gd 96 , 98 . These nuclei exhibit a remarkable variety of identical bands and bands where the energies and moments of inertia are shifted by the same constant amount for every spin state from 2 + to 12 + for various combinations of nuclei differing by 2n, 4n, 2p, 4p, and α

Highly miniaturised semi-loop meandered dual-band MIMO antenna system

KAUST Repository

Jehangir, Syed S.

2017-12-05

A novel dual-band two-element directional multiple-input-multiple-output (MIMO) antenna system is presented with 68% miniaturisation, which is achieved using a semi-loop meandered driven element and a small ground plane. The centre frequency of operation is 2 GHz. The antenna system covers two bands: the telemetry L-band 1.27-1.43 GHz and the global system for mobile communications/long-term evolution band 1.8-2.133 GHz. The simulation and measurement results are in good agreement. The proposed antenna system mimics the quasi-Yagi antenna configuration with a measured front-to-back ratio of around 15 dB at 1.35 GHz and 17 dB at 2 GHz, which is achieved without using a large ground plane, extra metallic structures, multiple reflector elements, or any complex technique. A gain of more than 5 dBi is measured for the single element with a total radiation efficiency of around 85% in both bands. The measured isolation of the proposed MIMO antenna is more than 15 dB with < 0.0785 measured envelope correlation coefficient values in both bands.

Highly miniaturised semi-loop meandered dual-band MIMO antenna system

KAUST Repository

Jehangir, Syed S.; Sharawi, Mohammad S.; Shamim, Atif

2017-01-01

A novel dual-band two-element directional multiple-input-multiple-output (MIMO) antenna system is presented with 68% miniaturisation, which is achieved using a semi-loop meandered driven element and a small ground plane. The centre frequency of operation is 2 GHz. The antenna system covers two bands: the telemetry L-band 1.27-1.43 GHz and the global system for mobile communications/long-term evolution band 1.8-2.133 GHz. The simulation and measurement results are in good agreement. The proposed antenna system mimics the quasi-Yagi antenna configuration with a measured front-to-back ratio of around 15 dB at 1.35 GHz and 17 dB at 2 GHz, which is achieved without using a large ground plane, extra metallic structures, multiple reflector elements, or any complex technique. A gain of more than 5 dBi is measured for the single element with a total radiation efficiency of around 85% in both bands. The measured isolation of the proposed MIMO antenna is more than 15 dB with < 0.0785 measured envelope correlation coefficient values in both bands.

The edge transient-current technique (E-TCT) with high energy hadron beam

Energy Technology Data Exchange (ETDEWEB)

Gorišek, Andrej; Cindro, Vladimir; Kramberger, Gregor; Mandić, Igor [J. Stefan Institute, Ljubljana (Slovenia); Mikuž, Marko [J. Stefan Institute, Ljubljana (Slovenia); University of Ljubljana (Slovenia); Muškinja, Miha; Zavrtanik, Marko [J. Stefan Institute, Ljubljana (Slovenia)

2016-09-21

We propose a novel way to investigate the properties of silicon and CVD diamond detectors for High Energy Physics experiments complementary to the already well-established E-TCT technique using laser beam. In the proposed setup the beam of high energy hadrons (MIPs) is used instead of laser beam. MIPs incident on the detector in the direction parallel to the readout electrode plane and perpendicular to the edge of the detector. Such experiment could prove very useful to study CVD diamond detectors that are almost inaccessible for the E-TCT measurements with laser due to large band-gap as well as to verify and complement the E-TCT measurements of silicon. The method proposed is being tested at CERN in a beam of 120 GeV hadrons using a reference telescope with track resolution at the DUT of few μm. The preliminary results of the measurements are presented.

High-energy gamma-rays from Cyg X-1

Science.gov (United States)

Zdziarski, Andrzej A.; Malyshev, Denys; Chernyakova, Maria; Pooley, Guy G.

2017-11-01

We have obtained a firm detection of Cyg X-1 during its hard and intermediate spectral states in the energy range of 40 MeV-60 GeV based on observations by the Fermi Large Area Telescope, confirming the independent results at ≥60 MeV of a previous work. The detection significance is ≃8σ in the 0.1-10 GeV range. In the soft state, we have found only upper limits on the emission at energies ≳0.1 MeV. However, we have found emission with a very soft spectrum in the 40-80 MeV range, not detected previously. This is likely to represent the high-energy cut-off of the high-energy power-law tail observed in the soft state. Similarly, we have detected a γ-ray soft excess in the hard state, which appears to be of similar origin. We have also confirmed the presence of an orbital modulation of the detected emission in the hard state, expected if the γ-rays are from Compton upscattering of stellar blackbody photons. However, the observed modulation is significantly weaker than that predicted if the blackbody upscattering were the dominant source of γ-rays. This argues for a significant contribution from γ-rays produced by the synchrotron self-Compton process. We have found that such strong contribution is possible if the jet is strongly clumped. We reproduce the observed hard-state average broad-band spectrum using a self-consistent jet model, taking into account all the relevant emission processes, e± pair absorption and clumping. This model also reproduces the amplitude of the observed orbital modulation.

Valence Band Structure of InAs1−xBix and InSb1−xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

Science.gov (United States)

Samajdar, D. P.; Dhar, S.

2014-01-01

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1−xBix and InSb1−xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E − energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data. PMID:24592181

NEUTRINO EMISSION FROM HIGH-ENERGY COMPONENT GAMMA-RAY BURSTS

International Nuclear Information System (INIS)

Becker, Julia K.; Olivo, Martino; Halzen, Francis; O Murchadha, Aongus

2010-01-01

Gamma-ray bursts (GRBs) have the potential to produce the particle energies (up to 10 21 eV) and energy budget (10 44 erg yr -1 Mpc -3 ) to accommodate the spectrum of the highest energy cosmic rays; on the other hand, there is no observational evidence that they accelerate hadrons. The Fermi Gamma-ray Space Telescope recently observed two bursts that exhibit a power-law high-energy extension of a typical (Band) photon spectrum that extends to ∼30 GeV. On the basis of fireball phenomenology we argue that these two bursts, along with GRB941017 observed by EGRET in 1994, show indirect evidence for considerable baryon loading. Since the detection of neutrinos is the only unambiguous way to establish that GRBs accelerate protons, we use two methods to estimate the neutrino flux produced when they interact with fireball photons to produce charged pions and neutrinos. While the number of events expected from the two Fermi bursts discussed is small, should GRBs be the sources of the observed cosmic rays, a GRB941017-like event that has a hadronic power-law tail extending to several tens of GeV will be detected by the IceCube neutrino telescope.

Room Temperature Shear Band Development in Highly Twinned Wrought Magnesium AZ31B Sheet

Science.gov (United States)

Scott, Jon; Miles, Michael; Fullwood, David; Adams, Brent; Khosravani, Ali; Mishra, Raja K.

2013-01-01

Failure mechanisms were studied in wrought AZ31B magnesium alloy after forming under different strain paths. Optical micrographs were used to observe the shear band formation and regions of high twin density in samples strained under uniaxial, biaxial, and plane strain conditions. Interrupted testing at 4 pct effective strain increments, until failure, was used to observe the evolution of the microstructure. The results showed that shear bands, with a high percentage of twinned grains, appeared early in the samples strained under biaxial or plane strain tension. These bands are similar to those seen in uniaxial tension specimens just prior to failure where the uniaxial tensile ductility was much greater than that observed for plane strain or biaxial tension conditions. A forming limit diagram for AZ31B, which was developed from the strain data, showed that plane strain and biaxial tension had very similar limit strains; this contrasts with materials like steel or aluminum alloys, which typically have greater ductility in biaxial tension compared to plane strain tension.

Focus: Nucleation kinetics of shear bands in metallic glass.

Science.gov (United States)

Wang, J Q; Perepezko, J H

2016-12-07

The development of shear bands is recognized as the primary mechanism in controlling the plastic deformability of metallic glasses. However, the kinetics of the nucleation of shear bands has received limited attention. The nucleation of shear bands in metallic glasses (MG) can be investigated using a nanoindentation method to monitor the development of the first pop-in event that is a signature of shear band nucleation. The analysis of a statistically significant number of first pop-in events demonstrates the stochastic behavior that is characteristic of nucleation and reveals a multimodal behavior associated with local spatial heterogeneities. The shear band nucleation rate of the two nucleation modes and the associated activation energy, activation volume, and site density were determined by loading rate experiments. The nucleation activation energy is very close to the value that is characteristic of the β relaxation in metallic glass. The identification of the rate controlling kinetics for shear band nucleation offers guidance for promoting plastic flow in metallic glass.

High energy proton simulation of 14-MeV neutron damage in Al2O3

International Nuclear Information System (INIS)

Muir, D.W.; Bunch, J.M.

1975-01-01

High-energy protons are a potentially useful tool for simulating the radiation damage produced by 14-MeV neutrons in CTR materials. A comparison is given of calculations and measurements of the relative damage effectiveness of these two types of radiation in single-crystal Al 2 O 3 . The experiments make use of the prominent absorption band at 206 nm as an index to lattice damage, on the assumption that peak absorption is proportional to the concentration of lattice vacancies. The induced absorption is measured for incident proton energies ranging from 5 to 15 MeV and for 14-MeV neutrons. Recoil-energy spectra are calculated for elastic and inelastic scattering using published angular distributions. Recoil-energy spectra also are calculated for the secondary alpha particles and 12 C nuclei produced by (p,p'α) reactions on 16 O. The recoil spectra are converted to damage-energy spectra and then integrated to yield the damage-energy cross section at each proton energy and for 14 MeV neutrons. A comparison of the calculations with experimental results suggests that damage energy, at least at high energies, is a reasonable criterion for estimating this type of radiation damage. (auth)

Assessment of bird populations in a high quality savanna/woodland: a banding approach

Science.gov (United States)

Wilmore, Sandra L.; Glowacki, Gary A.; Grundel, Ralph

2005-01-01

Between 1999 and 2004, Save the Dunes Conservation Fund's Miller Woods Bird Banding Program monitored migrating and breeding bird populations within a high quality black oak, dry-mesic sand savanna/woodland with ridge and swale topography. The objectives of this program were to collect consistent and reliable demographic and abundance data on the bird populations, to investigate long-term population trends, and to contribute to improved land management decisions at regional and national scales. The technique employed involved capturing birds in mist nets that were deployed for set periods of time at 17 net sites in two banding areas in Miller Woods.

High capacity hybrid optical fiber-wireless links in 75–300GHz band

DEFF Research Database (Denmark)

Cavalcante, Lucas Costa Pereira; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

2014-01-01

Seamless convergence of fiber-optic and the wireless networks is of great interest for enabling transparent delivery of broadband services to users in different locations, including both metropolitan and rural areas. Current demand of bandwidth by end-users, especially using mobile devices......, is seeding the need to use bands located at the millimeter-wave region (30–300 GHz), mainly because of its inherent broadband nature. In our lab, we have conducted extensive research on high-speed photonic-wireless links in the W-band (75–110GHz). In this paper, we will present our latest findings...

VIBRONIC PROGRESSIONS IN SEVERAL DIFFUSE INTERSTELLAR BANDS

International Nuclear Information System (INIS)

Duley, W. W.; Kuzmin, Stanislav

2010-01-01

A number of vibronic progressions based on low-energy vibrational modes of a large molecule have been found in the diffuse interstellar band (DIB) spectrum of HD 183143. Four active vibrational modes have been identified with energies at 5.18 cm -1 , 21.41 cm -1 , 31.55 cm -1 , and 34.02 cm -1 . The mode at 34.02 cm -1 was previously recognized by Herbig. Four bands are associated with this molecule, with origins at 6862.61 A, 6843.64 A, 6203.14 A, and 5545.11 A (14589.1 cm -1 , 14608.08 cm -1 , 16116.41 cm -1 , and 18028.9 cm -1 , respectively). The progressions are harmonic and combination bands are observed involving all modes. The appearance of harmonic, rather than anharmonic, terms in these vibronic progressions is consistent with torsional motion of pendant rings, suggesting that the carrier is a 'floppy' molecule. Some constraints on the type and size of the molecule producing these bands are discussed.

Numerical modelling of high efficiency InAs/GaAs intermediate band solar cell

Science.gov (United States)

Imran, Ali; Jiang, Jianliang; Eric, Debora; Yousaf, Muhammad

2018-01-01

Quantum Dots (QDs) intermediate band solar cells (IBSC) are the most attractive candidates for the next generation of photovoltaic applications. In this paper, theoretical model of InAs/GaAs device has been proposed, where we have calculated the effect of variation in the thickness of intrinsic and IB layer on the efficiency of the solar cell using detailed balance theory. IB energies has been optimized for different IB layers thickness. Maximum efficiency 46.6% is calculated for IB material under maximum optical concentration.

Thematic mapper studies band correlation analysis

Science.gov (United States)

Ungar, S. G.; Kiang, R.

1976-01-01

Spectral data representative of thematic mapper candidate bands 1 and 3 to 7 were obtained by selecting appropriate combinations of bands from the JSC 24 channel multispectral scanner. Of all the bands assigned, only candidate bands 4 (.74 mu to .80 mu) and 5 (.80 mu to .91 mu) showed consistently high intercorrelation from region to region and time to time. This extremely high correlation persisted when looking at the composite data set in a multitemporal, multilocation domain. The GISS investigations lend positive confirmation to the hypothesis, that TM bands 4 and 5 are redundant.

Review of wide band-gap semiconductors technology

Directory of Open Access Journals (Sweden)

Jin Haiwei

2016-01-01

Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

Highly accurate potential energy surface, dipole moment surface, rovibrational energy levels, and infrared line list for {sup 32}S{sup 16}O{sub 2} up to 8000 cm{sup −1}

Energy Technology Data Exchange (ETDEWEB)

Huang, Xinchuan, E-mail: Xinchuan.Huang-1@nasa.gov, E-mail: Timothy.J.Lee@nasa.gov [SETI Institute, 189 Bernardo Ave, Suite No. 100, Mountain View, California 94043 (United States); Schwenke, David W., E-mail: David.W.Schwenke@nasa.gov [MS T27B-1, NAS Facility, NASA Ames Research Center, Moffett Field, California 94035 (United States); Lee, Timothy J., E-mail: Xinchuan.Huang-1@nasa.gov, E-mail: Timothy.J.Lee@nasa.gov [MS 245-1, Space Science and Astrobiology Division, NASA Ames Research Center, Moffett Field, California 94035 (United States)

2014-03-21

A purely ab initio potential energy surface (PES) was refined with selected {sup 32}S{sup 16}O{sub 2} HITRAN data. Compared to HITRAN, the root-mean-squares error (σ{sub RMS}) for all J = 0–80 rovibrational energy levels computed on the refined PES (denoted Ames-1) is 0.013 cm{sup −1}. Combined with a CCSD(T)/aug-cc-pV(Q+d)Z dipole moment surface (DMS), an infrared (IR) line list (denoted Ames-296K) has been computed at 296 K and covers up to 8000 cm{sup −1}. Compared to the HITRAN and CDMS databases, the intensity agreement for most vibrational bands is better than 85%–90%. Our predictions for {sup 34}S{sup 16}O{sub 2} band origins, higher energy {sup 32}S{sup 16}O{sub 2} band origins and missing {sup 32}S{sup 16}O{sub 2} IR bands have been verified by most recent experiments and available HITRAN data. We conclude that the Ames-1 PES is able to predict {sup 32/34}S{sup 16}O{sub 2} band origins below 5500 cm{sup −1} with 0.01–0.03 cm{sup −1} uncertainties, and the Ames-296K line list provides continuous, reliable and accurate IR simulations. The K{sub a}-dependence of both line position and line intensity errors is discussed. The line list will greatly facilitate SO{sub 2} IR spectral experimental analysis, as well as elimination of SO{sub 2} lines in high-resolution astronomical observations.

P2 Asymmetry of Au's M-band Flux and its smoothing effect due to high-Z ablator dopants

Science.gov (United States)

Li, Yongsheng; Zhai, Chuanlei; Ren, Guoli; Gu, Jianfa; Huo, Wenyi; Meng, Xujun; Ye, Wenhua; Lan, Ke; Zhang, Weiyan

2017-10-01

X-ray drive asymmetry is one of the main seeds of low-mode implosion asymmetry that blocks further improvement of the nuclear performance of ``high-foot'' experiments on the National Ignition Facility. More particularly, the P2 asymmetry of Au's M-band flux can also severely influence the implosion performance. Here we study the smoothing effect of mid- and/or high-Z dopants in ablator on M-band flux asymmetries, by modeling and comparing the implosion processes of a Ge-doped and a Si-doped ignition capsule driven by x-ray sources with asymmetric M-band flux. As the results, (1) mid- or high-Z dopants absorb M-band flux and re-emit isotropically, helping to smooth M-band flux arriving at the ablation front, therefore reducing the P2 asymmetries of the imploding shell and hot spot; (2) the smoothing effect of Ge-dopant is more remarkable than Si-dopant due to its higher opacity than the latter in Au's M-band; and (3) placing the doped layer at a larger radius in ablator is more efficient. Applying this effect may not be a main measure to reduce the low-mode implosion asymmetry, but might be of significance in some critical situations such as Inertial Confinement Fusion (ICF) experiments very near the performance cliffs of asymmetric x-ray drives.

High-alpha band synchronization across frontal, parietal and visual cortex mediates behavioral and neuronal effects of visuospatial attention.

Science.gov (United States)

Lobier, Muriel; Palva, J Matias; Palva, Satu

2018-01-15

Visuospatial attention prioritizes processing of attended visual stimuli. It is characterized by lateralized alpha-band (8-14 Hz) amplitude suppression in visual cortex and increased neuronal activity in a network of frontal and parietal areas. It has remained unknown what mechanisms coordinate neuronal processing among frontoparietal network and visual cortices and implement the attention-related modulations of alpha-band amplitudes and behavior. We investigated whether large-scale network synchronization could be such a mechanism. We recorded human cortical activity with magnetoencephalography (MEG) during a visuospatial attention task. We then identified the frequencies and anatomical networks of inter-areal phase synchronization from source localized MEG data. We found that visuospatial attention is associated with robust and sustained long-range synchronization of cortical oscillations exclusively in the high-alpha (10-14 Hz) frequency band. This synchronization connected frontal, parietal and visual regions and was observed concurrently with amplitude suppression of low-alpha (6-9 Hz) band oscillations in visual cortex. Furthermore, stronger high-alpha phase synchronization was associated with decreased reaction times to attended stimuli and larger suppression of alpha-band amplitudes. These results thus show that high-alpha band phase synchronization is functionally significant and could coordinate the neuronal communication underlying the implementation of visuospatial attention. Copyright © 2017 Elsevier Inc. All rights reserved.

Development and characterization of high temperature, high energy density dielectric materials to establish routes towards power electronics capacitive devices

Science.gov (United States)

Shay, Dennis P.

The maximum electrostatic energy density of a capacitor is a function of the relative permittivity (epsilonr) and the square of the dielectric breakdown strength (Eb). Currently, state-of-the art high temperature (>200 °C), SiC-based power electronics utilize CaZrO3-rich NP0/C0G-type capacitors, which have low relative permittivities of epsilonr ˜ 30-40, high breakdown strengths (> 1.0 MV/cm), and are chosen for their minimal change in energy storage with temperature. However, with operating temperatures exceeding the rated temperatures for such capacitors, there is an opportunity to develop new dielectric ceramics having higher energy densities and volumetric efficiencies at high temperatures (>200 °C) by utilizing higher permittivity dielectrics while maintaining high breakdown strengths via doping. The solid solution behavior of was characterized in order to determine the optimal composition for balancing permittivity and dielectric breakdown strength to obtain high energy densities at elevated temperatures. Characterization by X-ray diffraction (XRD) showed Vegard's law behavior across the solid solution with minimal 2nd phases. To determine a Ca(TixZr1-x)O3 composition that will also minimize electronic or band conduction, the optical properties of the Ca(TixZr1-x)O3 solid solution were investigated to identify a composition on the CaTiO3 - rich end of the solid solution with a large band gap. Both ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis) and spectroscopic ellipsometry were utilized to determine the Ca(TixZr1-x)O3 band gaps and optical properties. The resistivity at 250 °C scaled with the band gap energy across the solid solution. Comparing the current-voltage (I--V) behavior at 250 °C for Ca(Tix-yMnyZr0.2)O3 (CTZ + Mn) where x = 0.7, 0.8, 0.9, and y = 0.005, it was found that the Ca(Ti 0.795Mn0.005Zr0.2)O3 composition showed the lowest current density and a decrease in current density of 5 orders of magnitude compared to the un

A new perspective of ground band energy formulae

Indian Academy of Sciences (India)

J B GUPTA

2017-08-07

Aug 7, 2017 ... Nuclear structure; ground band; moment of inertia; softness parameter. PACS Nos 21.60 ... mary data on the spectral properties of atomic nuclei. ... poorer at higher spins and for shape transitional (in ... 25 and figure 4.11 on p.

Band-gap engineering of functional perovskites through quantum confinement and tunneling

DEFF Research Database (Denmark)

Castelli, Ivano Eligio; Pandey, Mohnish; Thygesen, Kristian Sommer

2015-01-01

An optimal band gap that allows for a high solar-to-fuel energy conversion efficiency is one of the key factors to achieve sustainability. We investigate computationally the band gaps and optical spectra of functional perovskites composed of layers of the two cubic perovskite semiconductors BaSnO3...... and BaTaO2N. Starting from an indirect gap of around 3.3 eV for BaSnO3 and a direct gap of 1.8 eV for BaTaO2N, different layerings can be used to design a direct gap of the functional perovskite between 2.3 and 1.2 eV. The variations of the band gap can be understood in terms of quantum confinement...

Hearing loss prevention education using adopt-a-band: changes in self-reported earplug use in two high school marching bands.

Science.gov (United States)

Auchter, Melissa; Le Prell, Colleen G

2014-06-01

Hearing loss prevention has always been an important issue for audiologists. The importance of hearing loss prevention education for young musicians is now recognized by the National Association for Music Education as well as the National Association of Schools of Music. Adopt-a-Band is a commercial program designed to foster hearing loss prevention behavior in young musicians. This study assessed changes in earplug use, measured using self-report surveys, after Adopt-a-Band training. Participants were members of 2 high school marching bands who viewed an informational DVD and reviewed fact sheets. Flat-attenuation earplugs were distributed, and training was provided. In addition, study participants engaged in discussion of hearing loss with a doctor of audiology student. Before training, 23% of participants reported they had previously used hearing protection. Immediately after training, 94% of participants reported they planned to use hearing protection at least occasionally. In a final end-of-season survey, earplug use had reliably increased; 62% of participants reported they used earplugs at least occasionally. Earplug use increased, but self-reported behavioral change was not as robust as predicted from self-reported participant intentions. Participant comments regarding factors that influenced their earplug use decisions suggest opportunities to improve training.

Variable Energy 2-MeV S-Band Linac for X-ray and Other Applications

International Nuclear Information System (INIS)

Howard Bender; Dave Schwellenbach; Ron Sturges; Rusty Trainham

2008-01-01

We will describe the design and operation of a compact, 2-MeV, S-band linear accelerator (linac) with variable energy tuning and short-pulse operation down to 15 ps with 100-A peak current. The design consists of a buncher cavity for short-pulse operation and two coupled resonator sections for acceleration. Single-pulse operation is accomplished through a fast injector system with a 219-MHz subharmonic buncher. The machine is intended to support a variety of applications, such as X-ray and electron beam diagnostic development and, recently, electron diffraction studies of phase transitions in shocked materials

Variable Energy 2-MeV S-Band Linac for X-ray and Other Applications

International Nuclear Information System (INIS)

H. Bender; D. Schwellenbach; R. Sturges; R. Trainham

2008-01-01

This paper describes the design and operation of a compact, 2-MeV, S-band linear accelerator (linac) with variable energy tuning and short-pulse operation down to 15 ps with 100-A peak current. The design consists of a buncher cavity for short-pulse operation and two coupled resonator sections for acceleration. Single-pulse operation is accomplished through a fast injector system with a 219-MHz subharmonic buncher. The machine is intended to support a variety of applications, such as x-ray and electron beam diagnostic development, and recently, electron diffraction studies of phase transitions in shocked materials

Feeding of the superdeformed yrast band in sup 149 Gd

Energy Technology Data Exchange (ETDEWEB)

Haas, B.; Vivien, J.P.; Beck, F.A.; Benet, P.; Byrski, T.; Curien, D.; Duchene, G.; Gehringer, C.; Merdinger, J.C.; Romain, P. (Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires); Basu, S.K. (Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires Bhabha Atomic Research Centre, Calcutta (India). Variable Energy Cyclotron Centre); Kluge, H. (Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires Hahn-Meitner-Institut Berlin GmbH (Germany, F.R.)); Santos, D. (Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires Consejo Nacional de Investigaciones Cientificas y Tecnicas, Buenos Aires (Argentina)); Flibotte, S. (Hahn-Meitner-Institut Berlin GmbH (Germany, F.R.)); Gascon, J.; Taras, P. (Montreal Univ., Quebec (Canada). Lab. de Physique Nucleaire); Bozek, E.; Zuber, K. (Institute of Nuclear Physics, Krakow (Poland))

1990-08-02

The feeding pattern of the superdeformed yrast band in {sup 149}Gd has been found to remain essentially the same, using the {sup 124}Sn+{sup 30}Si reaction at beam energies of 150, 155 and 160 MeV leading to different input angular momenta and excitation energies in the compound nuclear system. This similarity as well as the relative yields of the superdeformed states as a function of beam energy may be understood in terms of the nuclear level density dependence on deformation and the onset of fission. In addition, it has been shown that, at all three beam energies, the selection of high-energy gamma rays does not enhance the yield of the superdeformed yrast states. (orig.).

Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

International Nuclear Information System (INIS)

Lucovsky, G.; Fulton, C.C.; Zhang, Y.; Luning, J.; Edge, L.; Whitten, J.L.; Nemanich, R.J.; Schlom, D.G.; Afanase'v, V.V.

2005-01-01

X-ray absorption spectroscopy (XAS) is used to study conduction band edge electronic structure of high-k transition metal (TM) and trivalent lanthanide series rare earth (RE) oxide dielectrics. Empty TM/RE d-states are studied by intra-atomic transitions originating in core level spin-orbit split p-states, and conduction band states are studied in inter-atomic transitions which originate in the oxygen atom 1s core level state. In non-crystalline Zr and Hf silicate alloys, the local bonding symmetry, or crystal field splits these d-states into doubly and triply degenerate features. In nano-crystalline oxides, there are additional d-state splittings due to contributions of more distant neighbors that completely remove d-state degeneracies via the Jahn-Teller effect mechanism. This gives rise to highly localized band edge states that are electronically active in photoconductivity, internal photoemission, and act as bulk traps in metal oxide semiconductor (MOS) devices

Photoemission investigation of the ZnSe/CdTe heterojunction band discontinuity

International Nuclear Information System (INIS)

Nelson, A.J.

1995-01-01

Synchrotron radiation soft x-ray photoemission spectroscopy and reflection high-energy electron diffraction were used to investigate the structural and electronic properties at the ZnSe/CdTe(100) heterojunction interface. ZnSe overlayers were sequentially grown in steps on p-type CdTe(100) single crystals at 200 degree C. In situ photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Cd 4d, Zn 3d, and Te 4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the ZnSe/CdTe heterojunction valence band discontinuity and the consequent heterojunction band diagram. Results of these measurements reveal that the valence band offset is ΔE v =0.20 eV. copyright 1995 American Institute of Physics

Nature of the high-binding-energy dip in the low-temperature photoemission spectra of Bi2Sr2CaCu2O8+δ

International Nuclear Information System (INIS)

Dessau, D.S.; Shen, Z.; Wells, B.O.; King, D.M.; Spicer, W.E.; Arko, A.J.; Lombardo, L.W.; Mitzi, D.B.; Kapitulnik, A.

1992-01-01

At the transition to superconductivity, an anomalous high-binding-energy (∼-90 meV) dip appears in the low-temperature photoemission spectra taken along the Γ-bar M high-symmetry direction of Bi 2 Sr 2 CaCu 2 O 8+δ . This paper details experiments which further characterize the energy and k-space dependence of this dip structure. The dip occurs over a wide portion of the Γ-bar M zone diagonal (110), yet shows minimal energy dispersion. In the spectra taken along the Γ-X zone edge (100), the dip is very weak or not present. We show that these results imply that the dip is not an artifact dependent on the experiment or special features of the band structure and therefore is an intrinsic feature of the superconducting state of Bi 2 Sr 2 CaCu 2 O 8+δ . The behavior of the normal-state bands along Γ-bar M in relation to the local-density-approximation prediction of a Bi-O-based electron ''pocket'' is also discussed, with our data explained most naturally if the Bi-O band remains above the Fermi level for all k

Results from the CLIC X-Band Structure Test Program at NLCTA

International Nuclear Information System (INIS)

Adolphsen, C.

2009-01-01

As part of a SLAC-CERN-KEK collaboration on high gradient X-band structure research, several prototype structures for the CLIC linear collider study have been tested using two of the high power (300 MW) X-band rf stations in the NLCTA facility at SLAC. These structures differ in terms of their fabrication (brazed disks and clamped quadrants), gradient profile (amount by which the gradient increases along the structure, which optimizes efficiency and maximizes sustainable gradient) and HOM damping (use of slots or waveguides to rapidly dissipate dipole mode energy). The CLIC goal in the next few years is to demonstrate the feasibility of a CLIC-ready baseline design and to investigate alternatives that could increase efficiency. This paper summarizes the high gradient test results from NLCTA in support of this effort.

Temperature-induced band shift in bulk γ-InSe by angle-resolved photoemission spectroscopy

Science.gov (United States)

Xu, Huanfeng; Wang, Wei; Zhao, Yafei; Zhang, Xiaoqian; Feng, Yue; Tu, Jian; Gu, Chenyi; Sun, Yizhe; Liu, Chang; Nie, Yuefeng; Edmond Turcu, Ion C.; Xu, Yongbing; He, Liang

2018-05-01

Indium selenide (InSe) has recently become popular research topics because of its unique layered crystal structure, direct band gap and high electron mobilities. In this work, we have acquired the electronic structure of bulk γ-InSe at various temperatures using angle-resolved photoemission spectroscopy (ARPES). We have also found that as the temperature decreases, the valence bands of γ-InSe exhibit a monotonic shift to lower binding energies. This band shift is attributed to the change of lattice parameters and has been validated by variable temperature X-ray diffraction measurements and theoretical calculations.

New Method for the Development of Plasmonic Metal-Semiconductor Interface Layer: Polymer Composites with Reduced Energy Band Gap

Directory of Open Access Journals (Sweden)

Shujahadeen B. Aziz

2017-01-01

Full Text Available Silver nanoparticles within a host polymer of chitosan were synthesized by using in situ method. Ultraviolet-visible spectroscopy was then carried out for the prepared chitosan : silver triflate (CS : AgTf samples, showing a surface plasmonic resonance (SPR peak at 420 nm. To prepare polymer composites with reduced energy band gap, different amounts of alumina nanoparticles were incorporated into the CS : AgTf solution. In the present work, the results showed that the reduced silver nanoparticles and their adsorption on wide band gap alumina (Al2O3 particles are an excellent approach for the preparation of polymer composites with small optical band gaps. The optical dielectric loss parameter has been used to determine the band gap experimentally. The physics behind the optical dielectric loss were interpreted from the viewpoint of quantum mechanics. From the quantum-mechanics viewpoint, optical dielectric loss was also found to be a complex equation and required lengthy numerical computation. From the TEM investigation, the adsorption of silver nanoparticles on alumina has been observed. The optical micrograph images showed white spots (silver specks with different sizes on the surface of the films. The second semicircle in impedance Cole-Cole plots was found and attributed to the silver particles.

Probing the graphite band structure with resonant soft-x-ray fluorescence

Energy Technology Data Exchange (ETDEWEB)

Carlisle, J.A.; Shirley, E.L.; Hudson, E.A. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

Soft x-ray fluorescence (SXF) spectroscopy using synchrotron radiation offers several advantages over surface sensitive spectroscopies for probing the electronic structure of complex multi-elemental materials. Due to the long mean free path of photons in solids ({approximately}1000 {angstrom}), SXF is a bulk-sensitive probe. Also, since core levels are involved in absorption and emission, SXF is both element- and angular-momentum-selective. SXF measures the local partial density of states (DOS) projected onto each constituent element of the material. The chief limitation of SXF has been the low fluorescence yield for photon emission, particularly for light elements. However, third generation light sources, such as the Advanced Light Source (ALS), offer the high brightness that makes high-resolution SXF experiments practical. In the following the authors utilize this high brightness to demonstrate the capability of SXF to probe the band structure of a polycrystalline sample. In SXF, a valence emission spectrum results from transitions from valence band states to the core hole produced by the incident photons. In the non-resonant energy regime, the excitation energy is far above the core binding energy, and the absorption and emission events are uncoupled. The fluorescence spectrum resembles emission spectra acquired using energetic electrons, and is insensitive to the incident photon`s energy. In the resonant excitation energy regime, core electrons are excited by photons to unoccupied states just above the Fermi level (EF). The absorption and emission events are coupled, and this coupling manifests itself in several ways, depending in part on the localization of the empty electronic states in the material. Here the authors report spectral measurements from highly oriented pyrolytic graphite.

Relocation of the disulfonic stilbene sites of AE1 (band 3) on the basis of fluorescence energy transfer measurements.

Science.gov (United States)

Knauf, Philip A; Law, Foon-Yee; Leung, Tze-Wah Vivian; Atherton, Stephen J

2004-09-28

Previous fluorescence resonance energy transfer (FRET) measurements, using BIDS (4-benzamido-4'-isothiocyanostilbene-2,2'-disulfonate) as a label for the disulfonic stilbene site and FM (fluorescein-5-maleimide) as a label for the cytoplasmic SH groups on band 3 (AE1), combined with data showing that the cytoplasmic SH groups lie about 40 A from the cytoplasmic surface of the lipid bilayer, would place the BIDS sites very near the membrane's inner surface, a location that seems to be inconsistent with current models of AE1 structure and mechanism. We reinvestigated the BIDS-FM distance, using laser single photon counting techniques as well as steady-state fluorescence of AE1, in its native membrane environment. Both techniques agree that there is very little energy transfer from BIDS to FM. The mean energy transfer (E), based on three-exponential fits to the fluorescence decay data, is 2.5 +/- 0.7% (SEM, N = 12). Steady-state fluorescence measurements also indicate BIDS to FM. These data indicate that the BIDS sites are probably over 63 A from the cytoplasmic SH groups, placing them near the middle or the external half of the lipid bilayer. This relocation of the BIDS sites fits with other evidence that the disulfonic stilbene sites are located farther toward the external membrane surface than Glu-681, a residue near the inner membrane surface whose modification affects the pH dependence and anion selectivity of band 3. The involvement of two relatively distant parts of the AE1 protein in transport function suggests that the transport mechanism requires coordinated large-scale conformational changes in the band 3 protein.

A feasibility study of high intensity positron sources for the S-band and TESLA linear colliders

Energy Technology Data Exchange (ETDEWEB)

Glantz, R.

1997-10-01

Future high energy linear colliders require luminosities above 10{sup 33} cm{sup -2}s{sup -1}. Therefore beam intensities have to be provided up to two orders of magnitude higher than achieved at present. It is comparably simple to reach high electron intensities. Positron intensities in this range, however, are difficult to realize with conventional positron sources. A new method of positron production was proposed in 1979 by V.E. Balakin and A.A. Mikhailichenko. The photons, necessary for pair production, are not generated by bremsstrahlung but by high energy electrons passing through an undulator. Based on this principle, a high intensity, unpolarized and polarized positron source for linear colliders was developed by K.Floettmann. In the present work, the requirements derived by K.Floettmann are used to study the feasibility of both the polarized and the unpolarized positron source. For economical reasons it is advantageous to use the beam after the interaction for positron production. In the main part of the present work a beam line is developed which guarantees a stable operation of the unpolarized wiggler-based positron source for the S-Band and TESLA linear collider. The requirements on the electron beam emittances are much higher for the polarized undulator-based source. For TESLA it is shown, that an operation of the polarized source is possible for design interactions. For a stable operation, taking into account perturbations at the interaction point, further investigations are necessary. For the SBLC, an operation of the polarized source is not possible with the present design.