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Sample records for high electronic carrier

  1. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    International Nuclear Information System (INIS)

    Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

    2017-01-01

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm 2 V −1 s −1 ), which is much higher than that of MoS 2 monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm 2 V −1 s −1 ), which is higher than that of MoS 2 monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm 2 V −1 s −1 , which is much higher than that of MoS 2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  2. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Energy Technology Data Exchange (ETDEWEB)

    Du, Juan [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Xia, Congxin, E-mail: xiacongxin@htu.edu.cn [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Liu, Yaming [Henan Institute of Science and Technology, Xinxiang 453003 (China); Li, Xueping [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Peng, Yuting [Department of Physics, University of Texas at Arlington, TX 76019 (United States); Wei, Shuyi [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China)

    2017-04-15

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is much higher than that of MoS{sub 2} monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is higher than that of MoS{sub 2} monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm{sup 2} V{sup −1} s{sup −1}, which is much higher than that of MoS{sub 2} monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  3. Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

    DEFF Research Database (Denmark)

    Niu, Wei; Gan, Yulin; Christensen, Dennis Valbjørn

    2017-01-01

    The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel γ-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1015 cm-2. Herein, we report on the patterning...... is found to be approximately 3×1013 cm-2, much lower than that of the unpatterned sample (~1015 cm-2). Remarkably, a high electron mobility of approximately 3,600 cm2V-1s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of ~ 7×1012 cm-2, which exhibits clear Shubnikov-de Hass...... quantum oscillations. The patterned high-mobility 2DEG at the γ-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devic...

  4. Ultrafast carrier dynamics in tetrahedral amorphous carbon: carrier trapping versus electron-hole recombination

    International Nuclear Information System (INIS)

    Carpene, E; Mancini, E; Dallera, C; Schwen, D; Ronning, C; Silvestri, S De

    2007-01-01

    We report the investigation of the ultrafast carrier dynamics in thin tetrahedral amorphous carbon films by means of femtosecond time-resolved reflectivity. We estimated the electron-phonon relaxation time of a few hundred femtoseconds and we observed that under low optical excitation photo-generated carriers decay according to two distinct mechanisms attributed to trapping by defect states and direct electron-hole recombination. With high excitation, when photo-carrier and trap densities are comparable, a unique temporal evolution develops, as the time dependence of the trapping process becomes degenerate with the electron-hole recombination. This experimental evidence highlights the role of defects in the ultrafast electronic dynamics and is not specific to this particular form of carbon, but has general validity for amorphous and disordered semiconductors

  5. Ultrafast carrier thermalization in lead iodide perovskite probed with two-dimensional electronic spectroscopy.

    Science.gov (United States)

    Richter, Johannes M; Branchi, Federico; Valduga de Almeida Camargo, Franco; Zhao, Baodan; Friend, Richard H; Cerullo, Giulio; Deschler, Felix

    2017-08-29

    In band-like semiconductors, charge carriers form a thermal energy distribution rapidly after optical excitation. In hybrid perovskites, the cooling of such thermal carrier distributions occurs on timescales of about 300 fs via carrier-phonon scattering. However, the initial build-up of the thermal distribution proved difficult to resolve with pump-probe techniques due to the requirement of high resolution, both in time and pump energy. Here, we use two-dimensional electronic spectroscopy with sub-10 fs resolution to directly observe the carrier interactions that lead to a thermal carrier distribution. We find that thermalization occurs dominantly via carrier-carrier scattering under the investigated fluences and report the dependence of carrier scattering rates on excess energy and carrier density. We extract characteristic carrier thermalization times from below 10 to 85 fs. These values allow for mobilities of 500 cm 2  V -1  s -1 at carrier densities lower than 2 × 10 19  cm -3 and limit the time for carrier extraction in hot carrier solar cells.Carrier-carrier scattering rates determine the fundamental limits of carrier transport and electronic coherence. Using two-dimensional electronic spectroscopy with sub-10 fs resolution, Richter and Branchi et al. extract carrier thermalization times of 10 to 85 fs in hybrid perovskites.

  6. Limitations of high dose carrier based formulations.

    Science.gov (United States)

    Yeung, Stewart; Traini, Daniela; Tweedie, Alan; Lewis, David; Church, Tanya; Young, Paul M

    2018-06-10

    This study was performed to investigate how increasing the active pharmaceutical ingredient (API) content within a formulation affects the dispersion of particles and the aerosol performance efficiency of a carrier based dry powder inhalable (DPI) formulation, using a custom dry powder inhaler (DPI) development rig. Five formulations with varying concentrations of API beclomethasone dipropionate (BDP) between 1% and 30% (w/w) were formulated as a multi-component carrier system containing coarse lactose and fine lactose with magnesium stearate. The morphology of the formulation and each component were investigated using scanning electron micrographs while the particle size was measured by laser diffraction. The aerosol performance, in terms of aerodynamic diameter, was assessed using the British pharmacopeia Apparatus E cascade impactor (Next generation impactor). Chemical analysis of the API was observed by high performance liquid chromatography (HPLC). Increasing the concentration of BDP in the blend resulted in increasing numbers and size of individual agglomerates and densely packed BDP multi-layers on the surface of the lactose carrier. BDP present within the multi-layer did not disperse as individual primary particles but as dense agglomerates, which led to a decrease in aerosol performance and increased percentage of BDP deposition within the Apparatus E induction port and pre-separator. As the BDP concentration in the blends increases, aerosol performance of the formulation decreases, in an inversely proportional manner. Concurrently, the percentage of API deposition in the induction port and pre-separator could also be linked to the amount of micronized particles (BDP and Micronized composite carrier) present in the formulation. The effect of such dose increase on the behaviour of aerosol dispersion was investigated to gain greater insight in the development and optimisation of higher dosed carrier-based formulations. Copyright © 2018 Elsevier B.V. All

  7. Investigation of carrier removal in electron irradiated silicon diodes

    International Nuclear Information System (INIS)

    Taylor, S.J.; Yamaguchi, M.; Matsuda, S.; Hisamatsu, T.; Kawasaki, O.

    1997-01-01

    We present a detailed study of n + p p + silicon diodes irradiated with fluences of 1 MeV electrons high enough to cause device failure due to majority carrier removal. Capacitance voltage (C V) measurements were used to monitor the change in the carrier concentration of the base of the device as a function of radiation fluence. These were compared to the defect spectra in the same region obtained by deep level transient spectroscopy, and to the current voltage characteristics of the device, both before and after annealing. We observed the expected deep levels with activation energies of 0.18 and 0.36 eV, but the C endash V results imply that other trap levels must play a more important role in the carrier removal process. copyright 1997 American Institute of Physics

  8. Influence of carrier density on the electronic cooling channels of bilayer graphene

    Science.gov (United States)

    Limmer, T.; Houtepen, A. J.; Niggebaum, A.; Tautz, R.; Da Como, E.

    2011-09-01

    We study the electronic cooling dynamics in a single flake of bilayer graphene by femtosecond transient absorption probing the photon-energy range 0.25-1.3 eV. From the transients, we extract the carrier cooling curves for different initial temperatures and densities of the photoexcited electrons and holes. Two regimes of carrier cooling, dominated by optical and acoustic phonons emission, are clearly identified. For increasing carrier density, the crossover between the two regimes occurs at larger carrier temperatures, since cooling via optical phonons experiences a bottleneck. Acoustic phonons, which are less sensitive to saturation, show an increasing contribution at high density.

  9. High power terahertz induced carrier multiplication in Silicon

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Pedersen, Pernille Klarskov; Iwaszczuk, Krzysztof

    2015-01-01

    The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons....

  10. Numerical simulation of RCS for carrier electronic warfare airplanes

    Directory of Open Access Journals (Sweden)

    Yue Kuizhi

    2015-04-01

    Full Text Available This paper studies the radar cross section (RCS of carrier electronic warfare airplanes. Under the typical naval operations section, the mathematical model of the radar wave’s pitch angle incidence range analysis is established. Based on the CATIA software, considering dynamic deflections of duck wing leading edge flaps, flaperons, horizontal tail, and rudder, as well as aircraft with air-to-air missile, anti-radiation missile, electronic jamming pod, and other weapons, the 3D models of carrier electronic warfare airplanes Model A and Model B with weapons were established. Based on the physical optics method and the equivalent electromagnetic flow method, by the use of the RCSAnsys software, the characteristics of carrier electronic warfare airplanes’ RCS under steady and dynamic flights were simulated under the UHF, X, and S radar bands. This paper researches the detection probability of aircraft by radars under the condition of electronic warfare, and completes the mathematical statistical analysis of the simulation results. The results show that: The Model A of carrier electronic warfare airplane is better than Model B on stealth performance and on discover probability by radar detection effectively.

  11. Numerical simulation of RCS for carrier electronic warfare airplanes

    OpenAIRE

    Yue Kuizhi; Liu Wenlin; Li Guanxiong; Ji Jinzu; Yu Dazhao

    2015-01-01

    This paper studies the radar cross section (RCS) of carrier electronic warfare airplanes. Under the typical naval operations section, the mathematical model of the radar wave’s pitch angle incidence range analysis is established. Based on the CATIA software, considering dynamic deflections of duck wing leading edge flaps, flaperons, horizontal tail, and rudder, as well as aircraft with air-to-air missile, anti-radiation missile, electronic jamming pod, and other weapons, the 3D models of carr...

  12. Electronic structure of charge carriers in a polysilane quantum wire

    International Nuclear Information System (INIS)

    Kumagai, J.; Yoshida, H.; Ichikawa, T.

    1997-01-01

    The ESR, ESEEM and spectrophotometric studies on polysilane radical ions revealed that charge carriers, hole and conducting electrons, are not delocalized all over the Si-Si main chain but confined to a part of the chain composed of only six Si atoms, probably near the branch on the main chain. Comparison of the ESR spectra of the radical cations and anions revealed that the hole can migrate from the main chain to an adjacent polymer chain via the side chains, whereas the conducting electron can not migrate since the side chains act as good intermolecular insulators for the electron. (author)

  13. Effect of interlayer tunneling on the electronic structure of bilayer cuprates and quantum phase transitions in carrier concentration and high magnetic field

    International Nuclear Information System (INIS)

    Ovchinnikov, S. G.; Makarov, I. A.; Shneyder, E. I.

    2011-01-01

    We present a theoretical study of the electronic structure of bilayer HTSC cuprates and its evolution under doping and in a high magnetic field. Analysis is based on the t-t′-t″-J* model in the generalized Hartree-Fock approximation. Possibility of tunneling between CuO2 layers is taken into account in the form of a nonzero integral of hopping between the orbitals of adjacent planes and is included in the scheme of the cluster form of perturbation theory. The main effect of the coupling between two CuO 2 layers in a unit cell is the bilayer splitting manifested in the presence of antibonding and bonding bands formed by a combination of identical bands of the layers themselves. A change in the doping level induces reconstruction of the band structure and the Fermi surface, which gives rise to a number of quantum phase transitions. A high external magnetic field leads to a fundamentally different form of electronic structure. Quantum phase transitions in the field are observed not only under doping, but also upon a variation of the field magnitude. Because of tunneling between the layers, quantum transitions are also split; as a result, a more complex sequence of the Lifshitz transitions than in single-layer structures is observed.

  14. High capacity carrier ethernet transport networks

    DEFF Research Database (Denmark)

    Rasmussen, Anders; Zhang, Jiang; Yu, Hao

    2009-01-01

    OAM functions, survivability and the increased bandwidth requirements of carrier class systems. This article provides an overview of PBB-TE and T-MPLS and demonstrates how IPTV services can be realized in the framework of Carrier Ethernet. In addition we provide a case study on performing bit error...

  15. [New electronic data carriers in Bosnia-Herzegovina].

    Science.gov (United States)

    Masić, I; Pandza, H; Knezević, Z; Toromanović, S

    1999-01-01

    Bosnia and Herzegovina has been developing new Health Care System based on Electronic Registration Card. Developing countries proceeded from the manual and semiautomatic method of medical data processing to the new method of entering, storage, transfer, searching and protection of data using electronic equipment. Currently, many European countries have developed a Medical Card Based Electronic Information System. Both technologies offer the advantages and disadvantages. Three types of electronic card are currently in use: Hybrid Card, Smart Card and Laser Card. Hybrid Card offers characteristics of both Smart Card and Laser Card. The differences among these cards, such as a capacity, total price, price per byte, security system are discussed here. The dilemma is, which card should be used as a data carrier. The Electronic Family Registration Card is a question of strategic interest for B&H, but also a big investment. We should avoid the errors of other countries that have been developing card-based system. In this article we present all mentioned cards and compare advantages and disadvantages of different technologies.

  16. Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

    Science.gov (United States)

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

    Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

  17. High brightness electron accelerator

    International Nuclear Information System (INIS)

    Sheffield, R.L.; Carlsten, B.E.; Young, L.M.

    1994-01-01

    A compact high brightness linear accelerator is provided for use, e.g., in a free electron laser. The accelerator has a first plurality of accelerating cavities having end walls with four coupling slots for accelerating electrons to high velocities in the absence of quadrupole fields. A second plurality of cavities receives the high velocity electrons for further acceleration, where each of the second cavities has end walls with two coupling slots for acceleration in the absence of dipole fields. The accelerator also includes a first cavity with an extended length to provide for phase matching the electron beam along the accelerating cavities. A solenoid is provided about the photocathode that emits the electrons, where the solenoid is configured to provide a substantially uniform magnetic field over the photocathode surface to minimize emittance of the electrons as the electrons enter the first cavity. 5 figs

  18. Renewable carbohydrates are a potential high-density hydrogen carrier

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Y.-H. Percival [Biological Systems Engineering Department, 210-A Seitz Hall, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States); Institute for Critical Technology and Applied Sciences (ICTAS), Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States); DOE BioEnergy Science Center (BESC), Oak Ridge, TN 37831 (United States)

    2010-10-15

    The possibility of using renewable biomass carbohydrates as a potential high-density hydrogen carrier is discussed here. Gravimetric density of polysaccharides is 14.8 H{sub 2} mass% where water can be recycled from PEM fuel cells or 8.33% H{sub 2} mass% without water recycling; volumetric densities of polysaccharides are >100 kg of H{sup 2}/m{sup 3}. Renewable carbohydrates (e.g., cellulosic materials and starch) are less expensive based on GJ than are other hydrogen carriers, such as hydrocarbons, biodiesel, methanol, ethanol, and ammonia. Biotransformation of carbohydrates to hydrogen by cell-free synthetic (enzymatic) pathway biotransformation (SyPaB) has numerous advantages, such as high product yield (12 H{sub 2}/glucose unit), 100% selectivity, high energy conversion efficiency (122%, based on combustion energy), high-purity hydrogen generated, mild reaction conditions, low-cost of bioreactor, few safety concerns, and nearly no toxicity hazards. Although SyPaB may suffer from current low reaction rates, numerous approaches for accelerating hydrogen production rates are proposed and discussed. Potential applications of carbohydrate-based hydrogen/electricity generation would include hydrogen bioreactors, home-size electricity generators, sugar batteries for portable electronics, sugar-powered passenger vehicles, and so on. Developments in thermostable enzymes as standardized building blocks for cell-free SyPaB projects, use of stable and low-cost biomimetic NAD cofactors, and accelerating reaction rates are among the top research and development priorities. International collaborations are urgently needed to solve the above obstacles within a short time. (author)

  19. High-power electronics

    CERN Document Server

    Kapitsa, Petr Leonidovich

    1966-01-01

    High-Power Electronics, Volume 2 presents the electronic processes in devices of the magnetron type and electromagnetic oscillations in different systems. This book explores the problems of electronic energetics.Organized into 11 chapters, this volume begins with an overview of the motion of electrons in a flat model of the magnetron, taking into account the in-phase wave and the reverse wave. This text then examines the processes of transmission of electromagnetic waves of various polarization and the wave reflection from grids made of periodically distributed infinite metal conductors. Other

  20. Carrier emission from the electronic states of self-assembled indium arsenide quantum dots

    International Nuclear Information System (INIS)

    Lin, S.W.; Song, A.M.; Missous, M.; Hawkins, I.D; Hamilton, B.; Engstroem, O.; Peaker, A.R.

    2006-01-01

    We have used the new technique of high resolution (Laplace) transient spectroscopy to examine the electronic states of ensembles of self-assembled quantum dots of InAs in a GaAs matrix. These have been produced by solid source MBE. We have monitored the s and p state occupancies as a function of time under thermal excitation over a range of temperatures after electrons have been captured by the quantum dots with different Fermi level positions. This can provide more information about the interaction of the dots with the host matrix than is possible with optical techniques and gives new fundamental insights into how such dots may operate in electronic devices such as memory and sensors. The increase in resolution of Laplace transient spectroscopy over conventional experiments reveals quite specific rates of carrier loss which we attribute to tunnelling at low temperatures and a combination of thermal emission and tunnelling as the temperature is increased

  1. Nonlinear transport in semiconducting polymers at high carrier densities.

    Science.gov (United States)

    Yuen, Jonathan D; Menon, Reghu; Coates, Nelson E; Namdas, Ebinazar B; Cho, Shinuk; Hannahs, Scott T; Moses, Daniel; Heeger, Alan J

    2009-07-01

    Conducting and semiconducting polymers are important materials in the development of printed, flexible, large-area electronics such as flat-panel displays and photovoltaic cells. There has been rapid progress in developing conjugated polymers with high transport mobility required for high-performance field-effect transistors (FETs), beginning with mobilities around 10(-4) cm(2) V(-1) s(-1) to a recent report of 1 cm(2) V(-1) s(-1) for poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). Here, the electrical properties of PBTTT are studied at high charge densities both as the semiconductor layer in FETs and in electrochemically doped films to determine the transport mechanism. We show that data obtained using a wide range of parameters (temperature, gate-induced carrier density, source-drain voltage and doping level) scale onto the universal curve predicted for transport in the Luttinger liquid description of the one-dimensional 'metal'.

  2. Variation of minority charge carrier lifetime in high-resistance p-type silicon under irradiation

    International Nuclear Information System (INIS)

    Basheleishvili, Z.V.; Garnyk, V.S.; Gorin, S.N.; Pagava, T.A.

    1984-01-01

    The minority carrier lifetime (tau) variation was studied in the process of p-type silicon bombardment with fast 8 MeV electrons. The irradiation and all measurements were carried out at room temperature. The tau quantity was measured by the photoconductivity attenuation method at a low injection level 20% measurement error; the resistivity was measured by the four-probe method (10% error). The resistivity and minority charge carrier lifetime tau are shown to increase with the exposure dose. It is supposed that as radiation dose increases, the rearrangement of the centres responsible for reducing the lifetime occurs and results in a tau increase in the material being irradiated, however the tau value observed in the original samples is not attained. The restoration of the minority carrier lifetime in p-type high-resistance silicon with a growing exposure dose might proceed due to reduction in the free carrier concentration

  3. Redox Homeostasis in Plants under Abiotic Stress: Role of electron carriers, energy metabolism mediators and proteinaceous thiols

    Directory of Open Access Journals (Sweden)

    Dhriti Kapoor

    2015-03-01

    Full Text Available Contemporaneous presence of both oxidized and reduced forms of electron carriers is mandatory in efficient flux by plant electron transport cascades. This requirement is considered as redox poising that involves the movement of electron from multiple sites in respiratory and photosynthetic electron transport chains to molecular oxygen. This flux triggers the formation of superoxide, consequently give rise to other reactive oxygen species (ROS under adverse environmental conditions like drought, high or low temperature, heavy metal stress etc. that plants owing during their life span. Plant cells synthesize ascorbate, an additional hydrophilic redox buffer, which protect the plants against oxidative challenge. Large pools of antioxidants also preside over the redox homeostasis. Besides, tocopherol is a liposoluble redox buffer, which efficiently scavenges the ROS like singlet oxygen. In addition, proteinaceous thiol members such as thioredoxin, peroxiredoxin and glutaredoxin, electron carriers and energy metabolism mediators phosphorylated (NADP and non-phosphorylated (NAD+ coenzyme forms interact with ROS, metabolize and maintain redox homeostasis.

  4. Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface

    NARCIS (Netherlands)

    Parui, S.; Klandermans, P. S.; Venkatesan, S.; Scheu, C.; Banerjee, T.

    2013-01-01

    Hot electron transport of direct and scattered carriers across an epitaxial NiSi2/n-Si(111) interface, for different NiSi2 thickness, is studied using ballistic electron emission microscopy (BEEM). We find the BEEM transmission for the scattered hot electrons in NiSi2 to be significantly lower than

  5. Theoretical prediction of high carrier mobility in single-walled black phosphorus nanotubes

    Science.gov (United States)

    Li, Q. F.; Wang, H. F.; Yang, C. H.; Li, Q. Q.; Rao, W. F.

    2018-05-01

    One-dimensional semiconductors are promising materials for high-performance nanoscale devices. Using the first-principles calculations combined with deformation potential approximation, we study the electronic structures and carrier transport properties of black phosphorus nanotubes (BPNTs). It is found that both armchair and zigzag BPNTs with diameter 13.5-18.5 Å are direct bandgap semiconductors. At a similar diameter, the carrier mobility of zigzag BPNT is one order of magnitude larger than that of armchair BPNT. For armchair BPNTs, the electron mobility is about 90.70-155.33 cm2 V-1 s-1 at room temperature, which is about three times of its hole counterpart. For zigzag BPNTs, the maximum mobility can reach 2.87 ×103 cm2 V-1 s-1. Furthermore, the electronic properties can be effectively tuned by the strain. For zigzag (0,13) nanotube, there is a direct-to-indirect band gap transition at a tensile strain of about 6%. Moreover, the electron mobility is boosted sharply by one order of magnitude by applying the compressive or tensile strain. The electron mobility increases to 14.05 ×103 cm2 V-1 s-1 at a tensile strain of 9%. Our calculations highlight the tunable electronic properties and superior carrier mobility of BPNTs that are promising for interesting applications in future nano-electronic devices.

  6. The dipole moment of the electron carrier adrenodoxin is not critical for redox partner interaction and electron transfer.

    Science.gov (United States)

    Hannemann, Frank; Guyot, Arnaud; Zöllner, Andy; Müller, Jürgen J; Heinemann, Udo; Bernhardt, Rita

    2009-07-01

    Dipole moments of proteins arise from helical dipoles, hydrogen bond networks and charged groups at the protein surface. High protein dipole moments were suggested to contribute to the electrostatic steering between redox partners in electron transport chains of respiration, photosynthesis and steroid biosynthesis, although so far experimental evidence for this hypothesis was missing. In order to probe this assumption, we changed the dipole moment of the electron transfer protein adrenodoxin and investigated the influence of this on protein-protein interactions and electron transfer. In bovine adrenodoxin, the [2Fe-2S] ferredoxin of the adrenal glands, a dipole moment of 803 Debye was calculated for a full-length adrenodoxin model based on the Adx(4-108) and the wild type adrenodoxin crystal structures. Large distances and asymmetric distribution of the charged residues in the molecule mainly determine the observed high value. In order to analyse the influence of the resulting inhomogeneous electric field on the biological function of this electron carrier the molecular dipole moment was systematically changed. Five recombinant adrenodoxin mutants with successively reduced dipole moment (from 600 to 200 Debye) were analysed for their redox properties, their binding affinities to the redox partner proteins and for their function during electron transfer-dependent steroid hydroxylation. None of the mutants, not even the quadruple mutant K6E/K22Q/K24Q/K98E with a dipole moment reduced by about 70% showed significant changes in the protein function as compared with the unmodified adrenodoxin demonstrating that neither the formation of the transient complex nor the biological activity of the electron transfer chain of the endocrine glands was affected. This is the first experimental evidence that the high dipole moment observed in electron transfer proteins is not involved in electrostatic steering among the proteins in the redox chain.

  7. Influence of carrier density on the electronic cooling channels of bilayer graphene

    NARCIS (Netherlands)

    Limmer, T.; Houtepen, A.J.; Niggebaum, A.; Tautz, R.; Da Como, E.

    2011-01-01

    We study the electronic cooling dynamics in a single flake of bilayer graphene by femtosecond transient absorption probing the photon-energy range 0.25–1.3 eV. From the transients, we extract the carrier cooling curves for different initial temperatures and densities of the photoexcited electrons

  8. High Dynamic Optimized Carrier Loop Improvement for Tracking Doppler Rates

    Directory of Open Access Journals (Sweden)

    Amirhossein Fereidountabar

    2015-01-01

    Full Text Available Mathematical analysis and optimization of a carrier tracking loop are presented. Due to fast changing of the carrier frequency in some satellite systems, such as Low Earth Orbit (LEO or Global Positioning System (GPS, or some planes like Unmanned Aerial Vehicles (UAVs, high dynamic tracking loops play a very important role. In this paper an optimized tracking loop consisting of a third-order Phase Locked Loop (PLL assisted by a second-order Frequency Locked Loop (FLL for UAVs is proposed and discussed. Based on this structure an optimal loop has been designed. The main advantages of this approach are the reduction of the computation complexity and smaller phase error. The paper shows the simulation results, comparing them with a previous work.

  9. High field electron linacs

    International Nuclear Information System (INIS)

    Le Duff, J.

    1985-12-01

    High field electron linacs are considered as potential candidates to provide very high energies beyond LEP. Since almost twenty years not much improvement has been made on linac technologies as they have been mostly kept at low and medium energies to be used as injectors for storage rings. Today, both their efficiency and their performances are being reconsidered, and for instance the pulse compression sheme developed at SLAC and introduced to upgrade the energy of that linac is a first step towards a new generation of linear accelerators. However this is not enough in terms of power consumption and more development is needed to improve both the efficiency of accelerating structures and the performances of RF power sources

  10. Low-voltage and high-efficiency white organic light emitting devices with carrier balance

    International Nuclear Information System (INIS)

    Wei Fuxiang; Huang, Y.; Fang, L.

    2010-01-01

    White organic light emitting devices with the structure of ITO/m-MTDATA:x%4F-TCNQ/NPB/TBADN:EBDP:DCJTB/Bphen:Liq/LiF/Al have been demonstrated in this paper. High-mobility m-MTDATA:4F-TCNQ is added into the region between ITO and NBP to increase hole injection and transport. The high-mobility Bphen:Liq layer is added into the region between cathode and emission layers to lower cathode barrier and facilitate carrier injection. In the meanwhile, an effective carrier balance (number of holes is equal to number of electrons) between holes and electrons is considered to be one of the most important factors for improving OLEDs. During the experiment, by modulating the doping concentration of 4F-TCNQ, we can control hole injection and transport to make the carriers reach a high-level balance. The maximum current efficiency and power efficiency of devices were 9.3 cd/A and 4.6 lm/A, respectively.

  11. Diffusion length of minority carriers in scanning electron beam annealed silicon

    International Nuclear Information System (INIS)

    Smith, H.J.; Cilliers, R.; Bontemps, A.

    1982-01-01

    Ion implantation has advantages for solar cell production, but necessitates an annealing step. Various new transitory annealing methods have appeared recently. A particularly attractive method is multi-scan electron beam annealing of thermally isolated wafers. Energy is applied homogeneously over the whole target surface and the temperature rises throughout the thickness. Backscattering analysis shows good recrystallization in seconds. However the effect of this total heating on the diffusion length (Lsub(D)) must be investigated particularly in view of the degradation of Lsub(D) due to high temperature oven annealing. The semiconductor-electrolyte diode method was set up to measure the current generated in the cell due to the creation and diffusion of carriers in the silicon under photon irradiation. Comparison with a theoretical model yields Lsub(D). It appears that 3mA.cm - 2 of 15keV electrons recrystallizes damage in 2.5 seconds and does not decrease Lsub(D) in the bulk. In 4 seconds the Lsub(D) decreases and dopant diffusion occurs. On technical grounds this method can thus be applied for solar cell production. (Auth.)

  12. Effects of Carrier Confinement and Intervalley Scattering on Photoexcited Electron Plasma in Silicon.

    Science.gov (United States)

    Sieradzki, A; Kuznicki, Z T

    2013-01-01

    The ultrafast reflectivity of silicon, excited and probed with femtosecond laser pulses, is studied for different wavelengths and energy densities. The confinement of carriers in a thin surface layer delimited by a nanoscale Si-layered system buried in a Si heavily-doped wafer reduces the critical density of carriers necessary to create the electron plasma by a factor of ten. We performed two types of reflectivity measurements, using either a single beam or two beams. The plasma strongly depends on the photon energy density because of the intervalley scattering of the electrons revealed by two different mechanisms assisted by the electron-phonon interaction. One mechanism leads to a negative differential reflectivity that can be attributed to an induced absorption in X valleys. The other mechanism occurs, when the carrier population is thermalizing and gives rise to a positive differential reflectivity corresponding to Pauli-blocked intervalley gamma to X scattering. These results are important for improving the efficiency of Si light-to-electricity converters, in which there is a possibility of multiplying carriers by nanostructurization of Si.

  13. High-brightness electron injectors

    International Nuclear Information System (INIS)

    Sheffield, R.L.

    1987-01-01

    Free-electron laser (FEL) oscillators and synchrotron light sources require pulse trains of high peak brightness and, in some applications, high-average power. Recent developments in the technology of photoemissive and thermionic electron sources in rf cavities for electron-linac injector applications offer promising advances over conventional electron injectors. Reduced emittance growth in high peak-current electron injectors may be achieved by using high field strengths and by linearizing the radial component of the cavity electric field at the expense of lower shunt impedance

  14. Nodal quasi-particles of the high-Tc superconductors as carriers of heat

    Directory of Open Access Journals (Sweden)

    K. Behnia

    2006-09-01

    Full Text Available   In the quest for understanding correlated electrons, high-temperature superconductivity remains a formidable challenge and a source of insight. This paper briefly recalls the central achievement by the study of heat transport at low temperatures. At very low temperatures, nodal quasi-particles of the d-wave superconducting gap become the main carriers of heat. Their thermal conductivity is unaffected by disorder and reflects the fine structure of the superconducting gap. This finding had led to new openings in the exploration of other unconventional superconductors

  15. Current fluctuation of electron and hole carriers in multilayer WSe{sub 2} field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho-Kyun; Jin, Jun Eon; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); Kim, Yong Jin; Kim, Young Keun [Department of Materials Science and Engineering, Korea University, Seoul 02481 (Korea, Republic of); Shin, Minju [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); IMEP-LAHC, Grenoble INP-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble (France)

    2015-12-14

    Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe{sub 2} field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe{sub 2} FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (S{sub I}) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NS{sub I}) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

  16. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

    International Nuclear Information System (INIS)

    Takagi, Akihiro; Nomura, Kenji; Ohta, Hiromichi; Yanagi, Hiroshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2005-01-01

    Carrier transport properties in amorphous oxide semiconductor InGaZnO 4 (a-IGZO) thin films were investigated in detail using temperature dependence of Hall measurements. It was found that Hall mobility increased distinctly as carrier concentration increased. Unlikely conventional amorphous semiconductors such as a-Si/H, definite normal Hall voltage signals were observed on the films with carrier concentrations (N e )>10 16 cm -3 , and Hall mobilities as large as 15 cm 2 (Vs) -1 were attained in the films with N e >10 20 cm -3 . When N e was less than 10 19 cm -3 , the temperature dependence of Hall mobility showed thermally-activated behavior in spite that carrier concentration was independent of temperature. While, it changed to almost degenerate conduction at N e >10 18 cm -3 . These behaviors are similar to those observed in single-crystalline IGZO, and are explained by percolation conduction through distributed potential barriers which are formed in the vicinity of the conduction band bottom due to the randomness of the amorphous structure. The effective mass of a-IGZO was estimated to be ∼0.34 m e (m e is the mass of free electron) from optical data, which is almost the same as that of crystalline IGZO (∼0.32 m e )

  17. Trace element carriers in combined sewer during dry and wet weather: an electron microscope investigation.

    Science.gov (United States)

    El Samrani, A G; Lartiges, B S; Ghanbaja, J; Yvon, J; Kohler, A

    2004-04-01

    The nature of trace element carriers contained in sewage and combined sewer overflow (CSO) was investigated by TEM-EDX-Electron diffraction and SEM-EDX. During dry weather, chalcophile elements were found to accumulate in sewer sediments as early diagenetic sulfide phases. The sulfurization of some metal alloys was also evidenced. Other heavy metal carriers detected in sewage include metal alloys, some iron oxihydroxide phases and neoformed phosphate minerals such as anapaite. During rain events, the detailed characterization of individual mineral species allowed to differentiate the contributions from various specific sources. Metal plating particles, barite from automobile brake, or rare earth oxides from catalytic exhaust pipes, originate from road runoff, whereas PbSn alloys and lead carbonates are attributed to zinc-works from roofs and paint from building siding. Soil contribution can be traced by the presence of clay minerals, iron oxihydroxides, zircons and rare earth phosphates. However, the most abundant heavy metal carriers in CSO samples were the sulfide particles eroded from sewer sediments. The evolution of relative abundances of trace element carriers during a single storm event, suggests that the pollution due to the "first flush" effect principally results from the sewer stock of sulfides and previously deposited metal alloys, rather than from urban surface runoff.

  18. Participation of Low Molecular Weight Electron Carriers in Oxidative Protein Folding

    Directory of Open Access Journals (Sweden)

    József Mandl

    2009-03-01

    Full Text Available Oxidative protein folding is mediated by a proteinaceous electron relay system, in which the concerted action of protein disulfide isomerase and Ero1 delivers the electrons from thiol groups to the final acceptor. Oxygen appears to be the final oxidant in aerobic living organisms, although the existence of alternative electron acceptors, e.g. fumarate or nitrate, cannot be excluded. Whilst the protein components of the system are well-known, less attention has been turned to the role of low molecular weight electron carriers in the process. The function of ascorbate, tocopherol and vitamin K has been raised recently. In vitro and in vivo evidence suggests that these redox-active compounds can contribute to the functioning of oxidative folding. This review focuses on the participation of small molecular weight redox compounds in oxidative protein folding.

  19. High-throughput bioscreening system utilizing high-performance affinity magnetic carriers exhibiting minimal non-specific protein binding

    International Nuclear Information System (INIS)

    Hanyu, Naohiro; Nishio, Kosuke; Hatakeyama, Mamoru; Yasuno, Hiroshi; Tanaka, Toshiyuki; Tada, Masaru; Nakagawa, Takashi; Sandhu, Adarsh; Abe, Masanori; Handa, Hiroshi

    2009-01-01

    For affinity purification of drug target protein we have developed magnetic carriers, narrow in size distribution (184±9 nm), which exhibit minimal non-specific binding of unwanted proteins. The carriers were highly dispersed in aqueous solutions and highly resistant to organic solvents, which enabled immobilization of various hydrophobic chemicals as probes on the carrier surfaces. Utilizing the carriers we have automated the process of separation and purification of the target proteins that had been done by manual operation previously.

  20. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal

    2014-12-01

    We have studied enhanced carrier injection by having an electron blocking layer (EBL) based on a graded superlattice (SL) design. Here, we examine, using a selfconsistent 6 × 6 k.p method, the energy band alignment diagrams under equilibrium and forward bias conditions while also considering carrier distribution and recombination rates (Shockley-Read-Hall, Auger, and radiative recombination rates). The graded SL is based on AlxGa1-xN (larger bandgap) Al0:5Ga0:5N (smaller bandgap) SL, where x is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed in the direct recombination rate, as compared with the conventional bulk EBL consisting of Al0:8Ga0:2N. An increase in the spatial overlap of carrier wavefunction was obtained due to polarization-induced band bending in the active region. An efficient single quantum-well ultraviolet-B light-emitting diode was designed, which emits at 280 nm. This is the effective wavelength for water disinfection application, among others.

  1. Mapping Carrier Dynamics on Material Surfaces in Space and Time using Scanning Ultrafast Electron Microscopy

    KAUST Repository

    Sun, Jingya

    2016-02-25

    Selectively capturing the ultrafast dynamics of charge carriers on materials surfaces and at interfaces is crucial to the design of solar cells and optoelectronic devices. Despite extensive research efforts over the past few decades, information and understanding about surface-dynamical processes, including carrier trapping and recombination remains extremely limited. A key challenge is to selectively map such dynamic processes, a capability that is hitherto impractical by time-resolved laser techniques, which are limited by the laser’s relatively large penetration depth and consequently they record mainly bulk information. Such surface dynamics can only be mapped in real space and time by applying four-dimensional (4D) scanning ultrafast electron microscopy (S-UEM), which records snapshots of materials surfaces with nanometer spatial and sub-picosecond temporal resolutions. In this method, the secondary electron (SE) signal emitted from the sample’s surface is extremely sensitive to the surface dynamics and is detected in real time. In several unique applications, we spatially and temporally visualize the SE energy gain and loss, the charge carrier dynamics on the surface of InGaN nanowires and CdSe single crystals and its powder film. We also provide the mechanisms for the observed dynamics, which will be the foundation for future potential applications of S-UEM to a wide range of studies on material surfaces and device interfaces.

  2. Mapping Carrier Dynamics on Material Surfaces in Space and Time using Scanning Ultrafast Electron Microscopy

    KAUST Repository

    Sun, Jingya; Adhikari, Aniruddha; Shaheen, Basamat; Yang, Haoze; Mohammed, Omar F.

    2016-01-01

    Selectively capturing the ultrafast dynamics of charge carriers on materials surfaces and at interfaces is crucial to the design of solar cells and optoelectronic devices. Despite extensive research efforts over the past few decades, information and understanding about surface-dynamical processes, including carrier trapping and recombination remains extremely limited. A key challenge is to selectively map such dynamic processes, a capability that is hitherto impractical by time-resolved laser techniques, which are limited by the laser’s relatively large penetration depth and consequently they record mainly bulk information. Such surface dynamics can only be mapped in real space and time by applying four-dimensional (4D) scanning ultrafast electron microscopy (S-UEM), which records snapshots of materials surfaces with nanometer spatial and sub-picosecond temporal resolutions. In this method, the secondary electron (SE) signal emitted from the sample’s surface is extremely sensitive to the surface dynamics and is detected in real time. In several unique applications, we spatially and temporally visualize the SE energy gain and loss, the charge carrier dynamics on the surface of InGaN nanowires and CdSe single crystals and its powder film. We also provide the mechanisms for the observed dynamics, which will be the foundation for future potential applications of S-UEM to a wide range of studies on material surfaces and device interfaces.

  3. Carrier density independent scattering rate in SrTiO3-based electron liquids.

    Science.gov (United States)

    Mikheev, Evgeny; Raghavan, Santosh; Zhang, Jack Y; Marshall, Patrick B; Kajdos, Adam P; Balents, Leon; Stemmer, Susanne

    2016-02-10

    We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T(n) (T is the temperature and n ≤ 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations from Landau Fermi liquid theory, where the scattering rate scales inversely with the Fermi energy (EF). We discuss that the behavior is very similar to systems traditionally identified as non-Fermi liquids (n density-independent scattering rates have been observed. The results indicate that the applicability of Fermi liquid theory should be questioned for a much broader range of correlated materials and point to the need for a unified theory.

  4. High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

    KAUST Repository

    Hou, Zhipeng; Wang, Wenhong; Xu, Guizhou; Zhang, Xiaoming; Wei, Zhiyang; Shen, Shipeng; Liu, Enke; Yao, Yuan; Chai, Yisheng; Sun, Young; Xi, Xuekui; Wang, Wenquan; Liu, Zhongyuan; Wu, Guangheng; Zhang, Xixiang

    2015-01-01

    Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole

  5. Strain engineering on electronic structure and carrier mobility in monolayer GeP3

    Science.gov (United States)

    Zeng, Bowen; Long, Mengqiu; Zhang, Xiaojiao; Dong, Yulan; Li, Mingjun; Yi, Yougen; Duan, Haiming

    2018-06-01

    Using density functional theory coupled with the Boltzmann transport equation with relaxation time approximation, we have studied the strain effect on the electronic structure and carrier mobility of two-dimensional monolayer GeP3. We find that the energies of valence band maximum and conduction band minimum are nearly linearly shifted with a biaxial strain in the range of  ‑4% to 6%, and the band structure experiences a remarkable transition from semiconductor to metal with the appropriate compression (‑5% strain). Under biaxial strain, the mobility of the electron and hole in monolayer GeP3 reduces and increases by more than one order of magnitude, respectively. It is suggested that it is possible to perform successive transitions from an n-type semiconductor (‑4% strain) to a good performance p-semiconductor (+6% strain) by applying strain in monolayer GeP3, which is potentially useful for flexible electronics and nanosized mechanical sensors.

  6. Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor.

    Science.gov (United States)

    Hung, Wen-Yi; Chiang, Pin-Yi; Lin, Shih-Wei; Tang, Wei-Chieh; Chen, Yi-Ting; Liu, Shih-Hung; Chou, Pi-Tai; Hung, Yi-Tzu; Wong, Ken-Tsung

    2016-02-01

    A star-shaped 1,3,5-triazine/cyano hybrid molecule CN-T2T was designed and synthesized as a new electron acceptor for efficient exciplex-based OLED emitter by mixing with a suitable electron donor (Tris-PCz). The CN-T2T/Tris-PCz exciplex emission shows a high ΦPL of 0.53 and a small ΔET-S = -0.59 kcal/mol, affording intrinsically efficient fluorescence and highly efficient exciton up-conversion. The large energy level offsets between Tris-PCz and CN-T2T and the balanced hole and electron mobility of Tris-PCz and CN-T2T, respectively, ensuring sufficient carrier density accumulated in the interface for efficient generation of exciplex excitons. Employing a facile device structure composed as ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm), in which the electron-hole capture is efficient without additional carrier injection barrier from donor (or acceptor) molecule and carriers mobilities are balanced in the emitting layer, leads to a highly efficient green exciplex OLED with external quantum efficiency (EQE) of 11.9%. The obtained EQE is 18% higher than that of a comparison device using an exciplex exhibiting a comparable ΦPL (0.50), in which TCTA shows similar energy levels but higher hole mobility as compared with Tris-PCz. Our results clearly indicate the significance of mobility balance in governing the efficiency of exciplex-based OLED. Exploiting the Tris-PCz:CN-T2T exciplex as the host, we further demonstrated highly efficient yellow and red fluorescent OLEDs by doping 1 wt % Rubrene and DCJTB as emitter, achieving high EQE of 6.9 and 9.7%, respectively.

  7. Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li, Tian, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu; Dagenais, Mario, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu [Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742 (United States); Lu, Haofeng; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)

    2015-02-02

    Reduced quantum dot (QD) absorption due to state filling effects and enhanced electron transport in doped QDs are demonstrated to play a key role in solar energy conversion. Reduced QD state absorption with increased n-doping is observed in the self-assembled In{sub 0.5}Ga{sub 0.5}As/GaAs QDs from high resolution below-bandgap external quantum efficiency (EQE) measurement, which is a direct consequence of the Pauli exclusion principle. We also show that besides partial filling of the quantum states, electron-doping produces negatively charged QDs that exert a repulsive Coulomb force on the mobile electrons, thus altering the electron trajectory and reducing the probability of electron capture, leading to an improved collection efficiency of photo-generated carriers, as indicated by an absolute above-bandgap EQE measurement. The resulting redistribution of the mobile electron in the planar direction is further validated by the observed photoluminescence intensity dependence on doping.

  8. Electron microscopy characterization of a molybdenum diffusion barrier in metallizations for chip carriers

    International Nuclear Information System (INIS)

    He Anqiang; Ivey, Douglas G.

    2004-01-01

    Mo layers have been studied as potential diffusion barriers for Au-Sn solder bonds in micro/optoelectronic device packaging. Solder was electroplated as alternating AuSn and Au 5 Sn multi-layers on wafers covered with Ti as an adhesion layer, followed by Mo as the diffusion barrier and Au as a capping layer. Samples were annealed at 340-420 deg. C for as long as 20 min. Scanning and transmission electron microscopy (SEM and TEM) were utilized to characterize interfacial reactions. Mo was found to be metallurgically stable, relative to the Au-Sn solder and the other metallization components, at temperatures up to at least 420 deg. C. However, the effectiveness of Mo as a barrier can be compromised by two factors. One of these is related to surface roughness associated with AlN or Al 2 O 3 carriers. Non-uniform metallization coverage can lead to breaks in the Mo barrier, resulting in contact between the carrier and molten solder during bonding applications. In addition, thermal stresses generated during heating and cooling can lead to cracking and spalling of the Mo and adhesion layers, exposing the carrier material to molten solder. Pre-annealing can help to relieve the thermal stresses and prevent spalling

  9. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa; Sevilla, Galo Torres; Cordero, Marlon Diaz; Kutbee, Arwa T.

    2017-01-01

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications

  10. High school Tay-Sachs disease carrier screening: 5 to 11-year follow-up.

    Science.gov (United States)

    Curd, Helen; Lewis, Sharon; Macciocca, Ivan; Sahhar, Margaret; Petrou, Vicki; Bankier, Agnes; Lieberman, Sari; Levy-Lahad, Ephrat; Delatycki, Martin B

    2014-04-01

    The Melbourne high school Tay-Sachs disease (TSD) carrier screening program began in 1997. The aim of this study was to assess the outcomes of this screening program among those who had testing more than 5 years ago, to evaluate the long-term impact of screening. A questionnaire was used for data collection and consisted of validated scales and purposively designed questions. Questionnaires were sent to all carriers and two non-carriers for each carrier who were screened in the program between 1999 and 2005. Twenty-four out of 69 (34.8 %) carriers and 30/138 (21.7 %) non-carriers completed the questionnaire. Most participants (82 %) retained good knowledge of TSD and there was no evidence of a difference in knowledge between carriers and non-carriers. Most participants (83 %) were happy with the timing and setting of screening and thought that education and screening for TSD should be offered during high school. There was no difference between carriers and non-carriers in mean scores for the State Trait Anxiety Inventory and Decision Regret Scale. This evaluation indicated that 5-11 years post high school screening, those who were screened are supportive of the program and that negative consequences are rare.

  11. Family Registration Card as electronic medical carrier in Bosnia and Herzegovina.

    Science.gov (United States)

    Novo, Ahmed; Masic, Izet; Toromanovic, Selim; Loncarevic, Nedim; Junuzovic, Dzelaludin; Dizdarevic, Jadranka

    2004-01-01

    Medical documentation is a very important part of the medical documentalistics and is occupies a large part of daily work of medical staff working in Primary Health Care. Paper documentation is going to be replaced by electronic cards in Bosnia and Herzegovina and a new Health Care System is under development, based on an Electronic Family Registration Card. Developed countries proceeded from the manual and semiautomatic method of medical data processing to the new method of entering, storage, transferring, searching and protecting data, using electronic equipment. Currently, many European countries have developed a Medical Card Based Electronic Information System. Three types of electronic card are currently in use: a Hybrid Card, a Smart Card and a Laser Card. The dilemma is which card should be used as a data carrier. The Electronic Family Registration Cared is a question of strategic interest for B&H, but also a great investment. We should avoid the errors of other countries that have been developing card-based system. In this article we present all mentioned cards and compare advantages and disadvantages of different technologies.

  12. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

    Science.gov (United States)

    Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-18

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  13. InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure

    Science.gov (United States)

    Kanouni, F.; Brezini, A.; Djenane, M.; Zou, Q.

    2018-03-01

    We have theoretically investigated the electron energy spectra and surface states energy in the three dimensionally ordered quantum dot superlattices (QDSLs) made of InN and GaN semiconductors. The QDSL is assumed in this model to be a matrix of GaN containing cubic dots of InN of the same size and uniformly distributed. For the miniband’s structure calculation, the resolution of the effective mass Schrödinger equation is done by decoupling it in the three directions within the framework of Kronig-Penney model. We found that the electrons minibands in infinite ODSLs are clearly different from those in the conventional quantum-well superlattices. The electrons localization and charge-carrier states are very dependent on the quasicrystallographic directions, the size and the shape of the dots which play a role of the artificial atoms in such QD supracrystal. The energy spectrum of the electron states localized at the surface of InN/GaN QDSL is represented by Kronig-Penney like-model, calculated via direct matching procedure. The calculation results show that the substrate breaks symmetrical shape of QDSL on which some localized electronic surface states can be produced in minigap regions. Furthermore, we have noticed that the surface states degeneracy is achieved in like very thin bands located in the minigaps, identified by different quantum numbers nx, ny, nz. Moreover, the surface energy bands split due to the reduction of the symmetry of the QDSL in z-direction.

  14. High energy polarized electron beams

    International Nuclear Information System (INIS)

    Rossmanith, R.

    1987-01-01

    In nearly all high energy electron storage rings the effect of beam polarization by synchrotron radiation has been measured. The buildup time for polarization in storage rings is of the order of 10 6 to 10 7 revolutions; the spins must remain aligned over this time in order to avoid depolarization. Even extremely small spin deviations per revolution can add up and cause depolarization. The injection and the acceleration of polarized electrons in linacs is much easier. Although some improvements are still necessary, reliable polarized electron sources with sufficiently high intensity and polarization are available. With the linac-type machines SLC at Stanford and CEBAF in Virginia, experiments with polarized electrons will be possible

  15. A high resolution EELS study of free-carrier variations in H2+/H+ bombarded (100)GaAs

    International Nuclear Information System (INIS)

    Dubois, L.H.; Schwartz, G.P.

    1984-01-01

    High resolution electron energy loss spectroscopy (EELS) has been used to examine whether thermal recovery of the near-surface free-carrier concentration in Te-doped (100) GaAs is accomplished following low energy (250--1500 eV) hydrogen ion bombardment. For hydrogen ion impact energies below 500 eV, the nominal bulk free-carrier density is recovered by annealing at 725 K for 2 h. For comparable ion doses, the net free-carrier concentration decreases monotonically at higher impact energies under similar annealing conditions. The threshold for damage retention occurs close to the value of transmitted energy which is necessary to create either a Ga or an As interstitial point defect

  16. Electronic properties of high Tc superconductors

    International Nuclear Information System (INIS)

    Rojo, A.G.

    1989-01-01

    Using analytical and numerical methods, the electronic properties of the copper-oxygen plane in the normal phase of high Tc superconductors are described. Using the slave-boson technique in the saddle point, a theory of the metal insulator transition which generalizes the notions of a Mott insulator to the case of more than a single band for those planes is presented. A phase-diagram is obtained in the parameter space and effective masses, optical gaps and metallization are calculated as a function of the number of carriers. Based on the experimental evidence, the theory permits classification of superconducting compounds as charge transfer insulators in the stoichiometric case. The insulator state is characterized by a non-zero optical gap and a divergent effective mass which corresponds to the breakage of a Fermi-liquid scheme. The results obtained are applicable to metal-transition-oxides whose behaviour has been traditionally controversial and it is concluded that it is necessary to broaden the meaning of a Mott insulator to the case of more than a single band to better understand them. Based on the ideas of group renormalization in a real space, a lattice approximation is presented, which allows: a) To complement the treatment of slave-bosons in phase diagrams and optical gaps; b) Identification of an attraction mechanism between carriers originating from purely repulsive interactions. Numerical calculations in small clusters show the existence of a pairing mechanism showing a superconducting instability from a charge transfer insulator. (Author) [es

  17. Charge carrier mobility and electronic properties of Al(Op3: impact of excimer formation

    Directory of Open Access Journals (Sweden)

    Andrea Magri

    2015-05-01

    Full Text Available We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olatealuminium(III (Al(Op3 both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op3 into organic thin film transistors (TFTs was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.

  18. Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

    Science.gov (United States)

    Zhang, Panlong; Wang, Haibo; Yan, Donghang

    2017-09-01

    A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Diffraction of high energy electrons

    International Nuclear Information System (INIS)

    Bourret, A.

    1981-10-01

    The diffraction of electrons by a crystal is examined to study its structure. As the electron-substance interaction is strong, it must be treated in a dynamic manner. Using the N waves theory and physical optics the base equations giving the wave at the outlet are deduced for a perfect crystal and their equivalence is shown. The more complex case of an imperfect crystal is then envisaged in these two approaches. In both cases, only the diffraction of high energy electrons ( > 50 KeV) are considered since in the diffraction of slow electrons back scattering cannot be ignored. Taking into account an increasingly greater number of beams, through fast calculations computer techniques, enables images to be simulated in very varied conditions. The general use of the Fast Fourier Transform has given a clear cut practical advantage to the multi-layer method [fr

  20. Phase separation in strongly correlated electron systems with two types of charge carriers

    International Nuclear Information System (INIS)

    Kugel, K.I.; Rakhmanov, A.L.; Sboychakov, A.O.

    2007-01-01

    Full text: A competition between the localization of the charge carriers due to Jahn-Teller distortions and the energy gain due to their delocalization in doped manganite and related magnetic oxides is analyzed based on a Kondo-lattice type model. The resulting effective Hamiltonian is, in fact, a generalization of the Falicov-Kimball model. We find that the number of itinerant charge carriers can be significantly lower than that implied by the doping level x. The phase diagram of the model in the T plane is constructed. The system exhibits magnetic ordered (antiferromagnetic, ferromagnetic, or canted) states as well the paramagnetic states with zero and nonzero density of the itinerant electrons. It is shown that a phase-separation is favorable in energy for a wide doping range. The characteristic size of inhomogeneities in a phase-separated state is of the order of several lattice constants. We also analyzed the two-band Hubbard model in the limit of strong on-site Coulomb repulsion. It was shown that such a system has a tendency to phase separation into the regions with different charge densities even in the absence of magnetic or any other ordering, if the ratio of the bandwidths is large enough. The work was supported by the European project CoMePhS and by the Russian Foundation for Basic Research, project no. 05-02-17600. (authors)

  1. In-plane heterostructures of Sb/Bi with high carrier mobility

    Science.gov (United States)

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  2. High current plasma electron emitter

    International Nuclear Information System (INIS)

    Fiksel, G.; Almagri, A.F.; Craig, D.

    1995-07-01

    A high current plasma electron emitter based on a miniature plasma source has been developed. The emitting plasma is created by a pulsed high current gas discharge. The electron emission current is 1 kA at 300 V at the pulse duration of 10 ms. The prototype injector described in this paper will be used for a 20 kA electrostatic current injection experiment in the Madison Symmetric Torus (MST) reversed-field pinch. The source will be replicated in order to attain this total current requirement. The source has a simple design and has proven very reliable in operation. A high emission current, small size (3.7 cm in diameter), and low impurity generation make the source suitable for a variety of fusion and technological applications

  3. Terahertz Conductivity within Colloidal CsPbBr3 Perovskite Nanocrystals: Remarkably High Carrier Mobilities and Large Diffusion Lengths.

    Science.gov (United States)

    Yettapu, Gurivi Reddy; Talukdar, Debnath; Sarkar, Sohini; Swarnkar, Abhishek; Nag, Angshuman; Ghosh, Prasenjit; Mandal, Pankaj

    2016-08-10

    Colloidal CsPbBr3 perovskite nanocrystals (NCs) have emerged as an excellent light emitting material in last one year. Using time domain and time-resolved THz spectroscopy and density functional theory based calculations, we establish 3-fold free carrier recombination mechanism, namely, nonradiative Auger, bimolecular electron-hole recombination, and inefficient trap-assisted recombination in 11 nm sized colloidal CsPbBr3 NCs. Our results confirm a negligible influence of surface defects in trapping charge carriers, which in turn results into desirable intrinsic transport properties, from the perspective of device applications, such as remarkably high carrier mobility (∼4500 cm(2) V(-1) s(-1)), large diffusion length (>9.2 μm), and high luminescence quantum yield (80%). Despite being solution processed and possessing a large surface to volume ratio, this combination of high carrier mobility and diffusion length, along with nearly ideal photoluminescence quantum yield, is unique compared to any other colloidal quantum dot system.

  4. High Power Electron Accelerator Prototype

    CERN Document Server

    Tkachenko, Vadim; Cheskidov, Vladimir; Korobeynikov, G I; Kuznetsov, Gennady I; Lukin, A N; Makarov, Ivan; Ostreiko, Gennady; Panfilov, Alexander; Sidorov, Alexey; Tarnetsky, Vladimir V; Tiunov, Michael A

    2005-01-01

    In recent time the new powerful industrial electron accelerators appear on market. It caused the increased interest to radiation technologies using high energy X-rays due to their high penetration ability. However, because of low efficiency of X-ray conversion for electrons with energy below 5 MeV, the intensity of X-rays required for some industrial applications can be achieved only when the beam power exceeds 300 kW. The report describes a project of industrial electron accelerator ILU-12 for electron energy up to 5 MeV and beam power up to 300 kW specially designed for use in industrial applications. On the first stage of work we plan to use the existing generator designed for ILU-8 accelerator. It is realized on the GI-50A triode and provides the pulse power up to 1.5-2 MW and up to 20-30 kW of average power. In the report the basic concepts and a condition of the project for today are reflected.

  5. High-resolution observation by double-biprism electron holography

    International Nuclear Information System (INIS)

    Harada, Ken; Tonomura, Akira; Matsuda, Tsuyoshi; Akashi, Tetsuya; Togawa, Yoshihiko

    2004-01-01

    High-resolution electron holography has been achieved by using a double-biprism interferometer implemented on a 1 MV field emission electron microscope. The interferometer was installed behind the first magnifying lens to narrow carrier fringes and thus enabled complete separation of sideband Fourier spectrum from center band in reconstruction process. Holograms of Au fine particles and single-crystalline thin films with the finest fringe spacing of 4.2 pm were recorded and reconstructed. The overall holography system including the reconstruction process performed well for holograms in which carrier fringes had a spacing of around 10 pm. High-resolution lattice images of the amplitude and phase were clearly reconstructed without mixing of the center band and sideband information. Additionally, entire holograms were recorded without Fresnel fringes normally generated by the filament electrode of the biprism, and the holograms were thus reconstructed without the artifacts caused by Fresnel fringes

  6. High current polarized electron source

    Science.gov (United States)

    Suleiman, R.; Adderley, P.; Grames, J.; Hansknecht, J.; Poelker, M.; Stutzman, M.

    2018-05-01

    Jefferson Lab operates two DC high voltage GaAs photoguns with compact inverted insulators. One photogun provides the polarized electron beam at the Continuous Electron Beam Accelerator Facility (CEBAF) up to 200 µA. The other gun is used for high average current photocathode lifetime studies at a dedicated test facility up to 4 mA of polarized beam and 10 mA of un-polarized beam. GaAs-based photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed facilities that must operate in excess of tens of mA of polarized average current. This contribution describes techniques to maintain good vacuum while delivering high beam currents, and techniques that minimize damage due to ion bombardment, the dominant mechanism that reduces photocathode yield. Advantages of higher DC voltage include reduced space-charge emittance growth and the potential for better photocathode lifetime. Highlights of R&D to improve the performance of polarized electron sources and prolong the lifetime of strained-superlattice GaAs are presented.

  7. Cellular Assays for Ferredoxins: A Strategy for Understanding Electron Flow through Protein Carriers That Link Metabolic Pathways.

    Science.gov (United States)

    Atkinson, Joshua T; Campbell, Ian; Bennett, George N; Silberg, Jonathan J

    2016-12-27

    The ferredoxin (Fd) protein family is a structurally diverse group of iron-sulfur proteins that function as electron carriers, linking biochemical pathways important for energy transduction, nutrient assimilation, and primary metabolism. While considerable biochemical information about individual Fd protein electron carriers and their reactions has been acquired, we cannot yet anticipate the proportion of electrons shuttled between different Fd-partner proteins within cells using biochemical parameters that govern electron flow, such as holo-Fd concentration, midpoint potential (driving force), molecular interactions (affinity and kinetics), conformational changes (allostery), and off-pathway electron leakage (chemical oxidation). Herein, we describe functional and structural gaps in our Fd knowledge within the context of a sequence similarity network and phylogenetic tree, and we propose a strategy for improving our understanding of Fd sequence-function relationships. We suggest comparing the functions of divergent Fds within cells whose growth, or other measurable output, requires electron transfer between defined electron donor and acceptor proteins. By comparing Fd-mediated electron transfer with biochemical parameters that govern electron flow, we posit that models that anticipate energy flow across Fd interactomes can be built. This approach is expected to transform our ability to anticipate Fd control over electron flow in cellular settings, an obstacle to the construction of synthetic electron transfer pathways and rational optimization of existing energy-conserving pathways.

  8. Recycling Gene Carrier with High Efficiency and Low Toxicity Mediated by L-Cystine-Bridged Bis(β-cyclodextrin)s

    Science.gov (United States)

    Zhang, Yu-Hui; Chen, Yong; Zhang, Ying-Ming; Yang, Yang; Chen, Jia-Tong; Liu, Yu

    2014-12-01

    Constructing safe and effective gene delivery carriers is becoming highly desirable for gene therapy. Herein, a series of supramolecular crosslinking system were prepared through host-guest binding of adamantyl-modified low molecular weight of polyethyleneimine with L-cystine-bridged bis(β-cyclodextrin)s and characterized by 1H NMR titration, electron microscopy, zeta potential, dynamic light-scattering, gel electrophoresis, flow cytometry and confocal fluorescence microscopy. The results showed that these nanometersized supramolecular crosslinking systems exhibited higher DNA transfection efficiencies and lower cytotoxicity than the commercial DNA carrier gold standard (25 kDa bPEI) for both normal cells and cancer cells, giving a very high DNA transfection efficiency up to 54% for 293T cells. Significantly, this type of supramolecular crosslinking system possesses a number of enzyme-responsive disulfide bonds, which can be cleaved by reductive enzyme to promote the DNA release but recovered by oxidative enzyme to make the carrier renewable. These results demonstrate that these supramolecular crosslinking systems can be used as promising gene carriers.

  9. High Charge Carrier Mobility Polymers for Organic Transistors

    OpenAIRE

    Erdmann, Tim

    2017-01-01

    I) Introduction p-Conjugated polymers inherently combine electronic properties of inorganic semiconductor crystals and material characteristics of organic plastics due to their special molecular design. This unique combination has led to developing new unconventional optoelectronic technologies and, further, resulted in the evolution of semiconducting polymers (SCPs) as fundamental components for novel electronic devices, such as organic field-effect transistors (OFETs), organic light-emit...

  10. High Intensity Polarized Electron Sources

    International Nuclear Information System (INIS)

    Poelker, Benard; Adderley, Philip; Brittian, Joshua; Clark, J.; Grames, Joseph; Hansknecht, John; McCarter, James; Stutzman, Marcy; Suleiman, Riad; Surles-law, Kenneth

    2008-01-01

    During the 1990s, at numerous facilities world wide, extensive RandD devoted to constructing reliable GaAs photoguns helped ensure successful accelerator-based nuclear and high-energy physics programs using spin polarized electron beams. Today, polarized electron source technology is considered mature, with most GaAs photoguns meeting accelerator and experiment beam specifications in a relatively trouble-free manner. Proposals for new collider facilities however, require electron beams with parameters beyond today's state-of-the-art and serve to renew interest in conducting polarized electron source RandD. And at CEBAF/Jefferson Lab, there is an immediate pressing need to prepare for new experiments that require considerably more beam current than before. One experiment in particular?Q-weak, a parity violation experiment that will look for physics beyond the Standard Model?requires 180 uA average current at polarization >80% for a duration of one year, with run-averaged helicity correlate

  11. Addressing the efficiency roll-off in a fluorescent OLED by facile electron transport layer doping and carrier confinement

    Science.gov (United States)

    Soman, Anjaly; M, Manuraj; Unni, K. N. Narayanan

    2018-05-01

    Organic light emitting diodes (OLEDs) often face the issue of decreasing power efficiency with increasing brightness. Loss of charge carrier balance is one of the factors contributing to the efficiency roll-off. We demonstrate that by using a combination of doped electron transport layer (ETL) and a specially chosen electron blocking layer (EBL) having high hole mobility, this efficiency roll-off can be effectively suppressed. A tris-(8-hydroxyquinoline) aluminium (Alq3) based OLED has been fabricated with 2,3,6,7-Tetrahydro-1,1,7,7,-tetramethyl-1H, 5H,11H-10-(2-benzothiazolyl) quinolizino-[9,9a, 1n gh]coumarin (C545T) as the emissive dopant. Bulk doping of the ETL with lithium fluoride (LiF) was optimized to increase the luminous intensity as well as the current efficiency. An EBL with high hole mobility introduced between the EML and the hole transport layer (HTL) improved the performance drastically, and the device brightness at 9 V got improved by a factor of 2.5 compared to that of the control device. While increasing the brightness from 100 cd/m2 to 1000 cd/m2, the power efficiency drop was 47% for the control device whereas only a drop of 15% was observed for the modified device. The possible mechanisms for the enhanced performance are discussed.

  12. Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

    Directory of Open Access Journals (Sweden)

    H. J. Harsan Ma

    2015-08-01

    Full Text Available The two-dimensional electron gas (2DEG formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO and non-polar SrTiO3 (STO. Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

  13. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-11-23

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications. While there exist bulk material reduction methods to flex them, such thinned CMOS electronics are fragile and vulnerable to handling for high throughput manufacturing. Here, we show a fusion of a CMOS technology compatible fabrication process for flexible CMOS electronics, with inkjet and conductive cellulose based interconnects, followed by additive manufacturing (i.e. 3D printing based packaging) and finally roll-to-roll printing of packaged decal electronics (thin film transistors based circuit components and sensors) focusing on printed high performance flexible electronic systems. This work provides the most pragmatic route for packaged flexible electronic systems for wide ranging applications.

  14. Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, Sathyanarayana, E-mail: asharao76@gmail.com; Rao, Asha, E-mail: asharao76@gmail.com [Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India); Krishnan, Sheeja [Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India); Sanjeev, Ganesh [Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India); Suresh, E. P. [Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)

    2014-04-24

    The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.

  15. A three-dimensional nitrogen-doped graphene structure: a highly efficient carrier of enzymes for biosensors

    Science.gov (United States)

    Guo, Jingxing; Zhang, Tao; Hu, Chengguo; Fu, Lei

    2015-01-01

    In recent years, graphene-based enzyme biosensors have received considerable attention due to their excellent performance. Enormous efforts have been made to utilize graphene oxide and its derivatives as carriers of enzymes for biosensing. However, the performance of these sensors is limited by the drawbacks of graphene oxide such as slow electron transfer rate, low catalytic area and poor conductivity. Here, we report a new graphene-based enzyme carrier, i.e. a highly conductive 3D nitrogen-doped graphene structure (3D-NG) grown by chemical vapour deposition, for highly effective enzyme-based biosensors. Owing to the high conductivity, large porosity and tunable nitrogen-doping ratio, this kind of graphene framework shows outstanding electrical properties and a large surface area for enzyme loading and biocatalytic reactions. Using glucose oxidase (GOx) as a model enzyme and chitosan (CS) as an efficient molecular binder of the enzyme, our 3D-NG based biosensors show extremely high sensitivity for the sensing of glucose (226.24 μA mM-1 m-2), which is almost an order of magnitude higher than those reported in most of the previous studies. The stable adsorption and outstanding direct electrochemical behaviour of the enzyme on the nanocomposite indicate the promising application of this 3D enzyme carrier in high-performance electrochemical biosensors or biofuel cells.In recent years, graphene-based enzyme biosensors have received considerable attention due to their excellent performance. Enormous efforts have been made to utilize graphene oxide and its derivatives as carriers of enzymes for biosensing. However, the performance of these sensors is limited by the drawbacks of graphene oxide such as slow electron transfer rate, low catalytic area and poor conductivity. Here, we report a new graphene-based enzyme carrier, i.e. a highly conductive 3D nitrogen-doped graphene structure (3D-NG) grown by chemical vapour deposition, for highly effective enzyme

  16. Development of high current electron beam generator

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook [and others

    1997-05-01

    A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs.

  17. Development of high current electron beam generator

    International Nuclear Information System (INIS)

    Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook

    1997-05-01

    A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs

  18. Charge fluctuations in high-electron-mobility transistors: a review

    International Nuclear Information System (INIS)

    Green, F.

    1993-01-01

    The quasi-two-dimensional carrier population, free to move within a near-perfect crystalline matrix, is the key to remarkable improvements in signal gain, current density and quiet operation. Current-fluctuation effects are central to all of these properties. Some of these are easily understood within linear-response theory, but other fluctuation phenomena are less tractable. In particular, nonequilibrium noise poses significant theoretical challenges, both descriptive and predictive. This paper examines a few of the basic physical issues which motivate device-noise theory. The structure and operation of high-electron-mobility transistor are first reviewed. The recent nonlinear fluctuation theory of Stanton and Wilkins (1987) help to identify at least some of the complicated noise physics which can arise when carriers in GaAs-like conduction bands are subjected to high fields. Simple examples of fluctuation-dominated behaviour are discussed, with numerical illustrations. 20 refs., 9 figs

  19. Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

    KAUST Repository

    Yang, Xinbo

    2017-05-31

    Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.

  20. High-temperature adsorption layers based on fluoridated polyimide and diatomite carrier

    Science.gov (United States)

    Yakovleva, E. Yu.; Shundrina, I. K.; Gerasimov, E. Yu.

    2017-09-01

    A way of preparing separation layers by the pyrolysis of fluorinated polyimide obtained from 2,4,6-trimethyl- m-phenylenediamine (2,4,6-TM mPDA) and 2,2-bis(3',4'-dicarboxyphenyl)hexafluoropropane (6FDA) applied onto a diatomite carrier is described. Thermogravimetry, elemental analysis, low-temperature nitrogen adsorption, high-resolution electron microscopy, and gas chromatography are used to study changes in the texture and chromatographic characteristics of these layers. It is found that changes in the structure and the effectivity of separation characteristic of the layers depend on the temperature of pyrolysis, which ranges from 250 to 1100°C. It is established that a layer of separation is formed at 250-350°C, and the order of elution of hydrocarbons is similar to their chromatographic behavior on such stationary phases as OV-101. Layers of amorphous carbon formed on the surfaces of individual particles on a diatomite surface at 500-700°C. These layers ensure highly stable and selective separation of permanent gases and hydrocarbons when they are present together.

  1. Temperature dependence of photoluminescence spectra of bilayer two-dimensional electron gases in LaAlO3/SrTiO3 superlattices: coexistence of Auger recombination and single-carrier trapping

    Directory of Open Access Journals (Sweden)

    H. J. Harsan Ma

    2015-06-01

    Full Text Available We report emerging photoluminescence (PL of bilayer two-dimensional electron gases (2DEG in LaAlO3/SrTiO3 (LAO/STO systems. A strong blue PL emerges in bilayer-2DEGs in LAO/STO/LAO/STO which doesn’t show in LAO/STO. PL band in bilayer-2DEGs includes both nearly temperature independent Auger recombination and temperature dependent free electron trapping while it crossovers from Auger recombination to single carrier trapping in LAO/STO. The PL signal of free electron trapping appears at high temperatures and it is much stronger than Auger recombination in the conducting channel in bilayer 2DEGs. This observation shows that high mobility carriers dominate the carrier dynamics in bilayer-2DEGs in LAO/STO superlattices.

  2. Band gap tunning in BN-doped graphene systems with high carrier mobility

    KAUST Repository

    Kaloni, T. P.

    2014-02-17

    Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.

  3. Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

    OpenAIRE

    Xu, Rui; He, Daowei; Zhang, Yuhan; Wu, Bing; Liu, Fengyuan; Meng, Lan; Liu, Jun-Fang; Wu, Qisheng; Shi, Yi; Wang, Jinlan; Nie, Jia-Cai; Wang, Xinran; He, Lin

    2014-01-01

    Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and grap...

  4. Attitudes of truck drivers and carriers on the use of electronic logging devices and driver harassment.

    Science.gov (United States)

    2014-11-01

    The research contained herein is an examination of managerial harassment experienced by drivers, and whether harassment is associated with the method used to log hours of service (HOS). Similar information was gathered from a sample of carriers. : Tr...

  5. High-energy electron diffraction and microscopy

    CERN Document Server

    Peng, L M; Whelan, M J

    2011-01-01

    This book provides a comprehensive introduction to high energy electron diffraction and elastic and inelastic scattering of high energy electrons, with particular emphasis on applications to modern electron microscopy. Starting from a survey of fundamental phenomena, the authors introduce the most important concepts underlying modern understanding of high energy electron diffraction. Dynamical diffraction in transmission (THEED) and reflection (RHEED) geometries is treated using ageneral matrix theory, where computer programs and worked examples are provided to illustrate the concepts and to f

  6. High-resolution electron microscopy

    CERN Document Server

    Spence, John C H

    2013-01-01

    This new fourth edition of the standard text on atomic-resolution transmission electron microscopy (TEM) retains previous material on the fundamentals of electron optics and aberration correction, linear imaging theory (including wave aberrations to fifth order) with partial coherence, and multiple-scattering theory. Also preserved are updated earlier sections on practical methods, with detailed step-by-step accounts of the procedures needed to obtain the highest quality images of atoms and molecules using a modern TEM or STEM electron microscope. Applications sections have been updated - these include the semiconductor industry, superconductor research, solid state chemistry and nanoscience, and metallurgy, mineralogy, condensed matter physics, materials science and material on cryo-electron microscopy for structural biology. New or expanded sections have been added on electron holography, aberration correction, field-emission guns, imaging filters, super-resolution methods, Ptychography, Ronchigrams, tomogr...

  7. High accuracy positioning using carrier-phases with the opensource GPSTK software

    OpenAIRE

    Salazar Hernández, Dagoberto José; Hernández Pajares, Manuel; Juan Zornoza, José Miguel; Sanz Subirana, Jaume

    2008-01-01

    The objective of this work is to show how using a proper GNSS data management strategy, combined with the flexibility provided by the open source "GPS Toolkit" (GPSTk), it is possible to easily develop both simple code-based processing strategies as well as basic high accuracy carrier-phase positioning techniques like Precise Point Positioning (PPP

  8. Hall mobility of free charge carriers in highly compensated p-Germanium

    International Nuclear Information System (INIS)

    Gavrilyuk, V.Yi.; Kirnas, Yi.G.; Balakyin, V.D.

    2000-01-01

    Hall mobility of free charge carriers in initial detectors Ge (Ga) is studied. It is established that an increase in the compensation factor results in the enlargement of Hall mobility in germanium highly compensated by introduction of Li ions during their drift in an electrical field

  9. Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

    International Nuclear Information System (INIS)

    Boxberg, Fredrik; Tulkki, Jukka

    2007-01-01

    Strain-induced quantum dots (SIQD) confine electrons and holes to a lateral potential minimum within a near-surface quantum well (QW). The potential minimum is located in the QW below a nanometre-sized stressor crystal grown on top of the QW. SIQD exhibit well-resolved and prominently atomic-like optical spectra, making them ideal for experimental and theoretical studies of mesoscopic phenomena in semiconductor nanocrystals. In this report we review the theory of strain-induced confinement, electronic structure, photonics and carrier relaxation dynamics in SIQD. The theoretical results are compared with available experimental data. Electronic structure calculations are mainly performed using the multiband envelope function approach. Many-body effects are discussed using a direct diagonalization method, albeit, for the sake of computational feasibility, within a two-band model. The QD carrier dynamics are discussed in terms of a master equation model, which accounts for the details of the electronic structure as well as the leading photon, phonon and Coulomb interaction processes. We also discuss the quantum confined Stark effect, the Zeeman splitting and the formation of Landau levels in external fields. Finally, we review a recent theory of the cooling of radiative QD excitons by THz radiation. In particular we discuss the resonance charge transfer of holes between piezoelectric trap states and the deformation potential minima. The agreement between the theory and experiment is fair throughout, but calls for further investigations

  10. The role of exogenous electron carriers in NAD(P)-dependent dehydrogenase cytochemistry studied in vitro and with a model system of polyacrylamide films

    NARCIS (Netherlands)

    van Noorden, C. J.; Tas, J.

    1982-01-01

    The applicability of phenazine methosulfate, 1-methoxyphenazine methosulfate, menadione, and meldola blue as exogenous electron carriers for the cytochemical staining of nicotinamide adenine dinucleotide (phosphate) (NAD(P))-dependent dehydrogenases has been studied quantitatively with tetranitro BT

  11. The Eindhoven High-Brightness Electron Programme

    NARCIS (Netherlands)

    Brussaard, G.J.H.; Wiel, van der M.J.

    2004-01-01

    The Eindhoven High-Brightness programme is aimed at producing ultra-short intense electron bunches from compact accelerators. The RF electron gun is capable of producing 100 fs electron bunches at 7.5 MeV and 10 pC bunch charge. The DC/RF hybrid gun under development will produce bunches <75 fs at

  12. High electron mobility InN

    International Nuclear Information System (INIS)

    Jones, R. E.; Li, S. X.; Haller, E. E.; van Genuchten, H. C. M.; Yu, K. M.; Ager, J. W. III; Liliental-Weber, Z.; Walukiewicz, W.; Lu, H.; Schaff, W. J.

    2007-01-01

    Irradiation of InN films with 2 MeV He + ions followed by thermal annealing below 500 deg. C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility

  13. Bioinformatic evidence for a widely distributed, ribosomally produced electron carrier precursor, its maturation proteins, and its nicotinoprotein redox partners

    Directory of Open Access Journals (Sweden)

    Haft Daniel H

    2011-01-01

    Full Text Available Abstract Background Enzymes in the radical SAM (rSAM domain family serve in a wide variety of biological processes, including RNA modification, enzyme activation, bacteriocin core peptide maturation, and cofactor biosynthesis. Evolutionary pressures and relationships to other cellular constituents impose recognizable grammars on each class of rSAM-containing system, shaping patterns in results obtained through various comparative genomics analyses. Results An uncharacterized gene cluster found in many Actinobacteria and sporadically in Firmicutes, Chloroflexi, Deltaproteobacteria, and one Archaeal plasmid contains a PqqE-like rSAM protein family that includes Rv0693 from Mycobacterium tuberculosis. Members occur clustered with a strikingly well-conserved small polypeptide we designate "mycofactocin," similar in size to bacteriocins and PqqA, precursor of pyrroloquinoline quinone (PQQ. Partial Phylogenetic Profiling (PPP based on the distribution of these markers identifies the mycofactocin cluster, but also a second tier of high-scoring proteins. This tier, strikingly, is filled with up to thirty-one members per genome from three variant subfamilies that occur, one each, in three unrelated classes of nicotinoproteins. The pattern suggests these variant enzymes require not only NAD(P, but also the novel gene cluster. Further study was conducted using SIMBAL, a PPP-like tool, to search these nicotinoproteins for subsequences best correlated across multiple genomes to the presence of mycofactocin. For both the short chain dehydrogenase/reductase (SDR and iron-containing dehydrogenase families, aligning SIMBAL's top-scoring sequences to homologous solved crystal structures shows signals centered over NAD(P-binding sites rather than over substrate-binding or active site residues. Previous studies on some of these proteins have revealed a non-exchangeable NAD cofactor, such that enzymatic activity in vitro requires an artificial electron acceptor such

  14. Towards high charge carrier mobilities by rational design of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Andrienko, Denis; Ruehle, Victor; Baumeier, Bjoern; Vehoff, Thorsten; Lukyanov, Alexander; Kremer, Kurt [Max Planck Institute for Polymer Research, Mainz (Germany); Marcon, Valentina [Technische Universitaet Darmstadt (Germany); Kirkpatrick, James; Nelson, Jenny [Imperial College London (United Kingdom); Lennartz, Christian [BASF AG, Ludwigshafen (Germany)

    2010-07-01

    The role of material morphology on charge carrier mobility in partially disordered organic semiconductors is discussed for several classes of materials: derivatives of hexabenzocoronenens, perylenediimides, triangularly-shaped polyaromatic hydrocarbons, and Alq{sub 3}. Simulations are performed using a package developed by Imperial College, London and Max Planck Institute for Polymer Research, Mainz (votca.org). This package combines several techniques into one scheme: quantum chemical methods for the calculation of molecular electronic structures and reorganization energies; molecular dynamics and systematic coarse-graining approaches for simulation of self-assembly and relative positions and orientations of molecules on large scales; kinetic Monte Carlo and master equation for studies of charge transport.

  15. High perveance electron gun for the electron cooling system

    International Nuclear Information System (INIS)

    Korotaev, Yu.; Meshkov, I.; Petrov, A.; Sidorin, A.; Smirnov, A.; Syresin, E.; Titkova, I.

    2000-01-01

    The cooling time in the electron cooling system is inversely proportional to the beam current. To obtain high current of the electron beam the control electrode of the gun is provided with a positive potential and an electrostatic trap for secondary electrons appears inside the electron gun. This leads to a decrease in the gun perveance. To avoid this problem, the adiabatic high perveance electron gun with the clearing control electrode is designed in JINR (J. Bosser, Y. Korotaev, I. Meshkov, E. Syresin et al., Nucl. Instr. and Meth. A 391 (1996) 103. Yu. Korotaev, I. Meshkov, A. Sidorin, A. Smirnov, E. Syresin, The generation of electron beams with perveance of 3-6 μA/V 3/2 , Proceedings of SCHEF'99). The clearing control electrode has a transverse electric field, which clears secondary electrons. Computer simulations of the potential map were made with RELAX3D computer code (C.J. Kost, F.W. Jones, RELAX3D User's Guide and References Manual)

  16. High perveance electron gun for the electron cooling system

    CERN Document Server

    Korotaev, Yu V; Petrov, A; Sidorin, A; Smirnov, A; Syresin, E M; Titkova, I

    2000-01-01

    The cooling time in the electron cooling system is inversely proportional to the beam current. To obtain high current of the electron beam the control electrode of the gun is provided with a positive potential and an electrostatic trap for secondary electrons appears inside the electron gun. This leads to a decrease in the gun perveance. To avoid this problem, the adiabatic high perveance electron gun with the clearing control electrode is designed in JINR (J. Bosser, Y. Korotaev, I. Meshkov, E. Syresin et al., Nucl. Instr. and Meth. A 391 (1996) 103. Yu. Korotaev, I. Meshkov, A. Sidorin, A. Smirnov, E. Syresin, The generation of electron beams with perveance of 3-6 mu A/V sup 3 sup / sup 2 , Proceedings of SCHEF'99). The clearing control electrode has a transverse electric field, which clears secondary electrons. Computer simulations of the potential map were made with RELAX3D computer code (C.J. Kost, F.W. Jones, RELAX3D User's Guide and References Manual).

  17. Modulated phase matching and high-order harmonic enhancement mediated by the carrier-envelope phase

    International Nuclear Information System (INIS)

    Faccio, Daniele; Serrat, Carles; Cela, Jose M.; Farres, Albert; Di Trapani, Paolo; Biegert, Jens

    2010-01-01

    The process of high-order harmonic generation in gases is numerically investigated in the presence of a few-cycle pulsed-Bessel-beam pump, featuring a periodic modulation in the peak intensity due to large carrier-envelope-phase mismatch. A two-decade enhancement in the conversion efficiency is observed and interpreted as the consequence of a mechanism known as a nonlinearly induced modulation in the phase mismatch.

  18. The mitochondrial pyruvate carrier mediates high fat diet-induced increases in hepatic TCA cycle capacity

    OpenAIRE

    Rauckhorst, Adam J.; Gray, Lawrence R.; Sheldon, Ryan D.; Fu, Xiaorong; Pewa, Alvin D.; Feddersen, Charlotte R.; Dupuy, Adam J.; Gibson-Corley, Katherine N.; Cox, James E.; Burgess, Shawn C.; Taylor, Eric B.

    2017-01-01

    Objective: Excessive hepatic gluconeogenesis is a defining feature of type 2 diabetes (T2D). Most gluconeogenic flux is routed through mitochondria. The mitochondrial pyruvate carrier (MPC) transports pyruvate from the cytosol into the mitochondrial matrix, thereby gating pyruvate-driven gluconeogenesis. Disruption of the hepatocyte MPC attenuates hyperglycemia in mice during high fat diet (HFD)-induced obesity but exerts minimal effects on glycemia in normal chow diet (NCD)-fed conditions. T...

  19. Carbon nanotube transistor based high-frequency electronics

    Science.gov (United States)

    Schroter, Michael

    At the nanoscale carbon nanotubes (CNTs) have higher carrier mobility and carrier velocity than most incumbent semiconductors. Thus CNT based field-effect transistors (FETs) are being considered as strong candidates for replacing existing MOSFETs in digital applications. In addition, the predicted high intrinsic transit frequency and the more recent finding of ways to achieve highly linear transfer characteristics have inspired investigations on analog high-frequency (HF) applications. High linearity is extremely valuable for an energy efficient usage of the frequency spectrum, particularly in mobile communications. Compared to digital applications, the much more relaxed constraints for CNT placement and lithography combined with already achieved operating frequencies of at least 10 GHz for fabricated devices make an early entry in the low GHz HF market more feasible than in large-scale digital circuits. Such a market entry would be extremely beneficial for funding the development of production CNTFET based process technology. This talk will provide an overview on the present status and feasibility of HF CNTFET technology will be given from an engineering point of view, including device modeling, experimental results, and existing roadblocks. Carbon nanotube transistor based high-frequency electronics.

  20. High temperature electronic gain device

    International Nuclear Information System (INIS)

    McCormick, J.B.; Depp, S.W.; Hamilton, D.J.; Kerwin, W.J.

    1979-01-01

    An integrated thermionic device suitable for use in high temperature, high radiation environments is described. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube

  1. Double carriers pulse DLTS for the characterization of electron-hole recombination process in GaAsN grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    Bouzazi, Boussairi; Suzuki, Hidetoshi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2011-01-01

    A nitrogen-related electron trap (E1), located approximately 0.33 eV from the conduction band minimum of GaAsN grown by chemical beam epitaxy, was confirmed by investigating the dependence of its density with N concentration. This level exhibits a high capture cross section compared with that of native defects in GaAs. Its density increases significantly with N concentration, persists following post-thermal annealing, and was found to be quasi-uniformly distributed. These results indicate that E1 is a stable defect that is formed during growth to compensate for the tensile strain caused by N. Furthermore, E1 was confirmed to act as a recombination center by comparing its activation energy with that of the recombination current in the depletion region of the alloy. However, this technique cannot characterize the electron-hole (e-h) recombination process. For that, double carrier pulse deep level transient spectroscopy is used to confirm the non-radiative e-h recombination process through E1, to estimate the capture cross section of holes, and to evaluate the energy of multi-phonon emission. Furthermore, a configuration coordinate diagram is modeled based on the physical parameters of E1. -- Research Highlights: → Double carrier pulse DLTS method confirms the existence of SRH center. → The recombination center in GaAsN depends on nitrogen concentration. → Minority carrier lifetime in GaAsN is less than 1 ns. → A non-radiative recombination center exits in GaAsN.

  2. Femtosecond pump-probe studies of phonons and carriers in bismuth under high pressure

    International Nuclear Information System (INIS)

    Kasami, M.; Ogino, T.; Mishina, T.; Yamamoto, S.; Nakahara, J.

    2006-01-01

    We investigate the high-pressure phase of Bi under hydrostatic pressure using pump-probe spectroscopy at pressures up to 3.0 GPa, and we observe coherent phonons signal and relaxation signal of photo-excited carriers at Bi(II) and Bi(III) phases. The pressure dependence of the coherent phonons shows that the amplitude of coherent phonons is extremely small and the frequency of coherent phonons changes at high-pressure phases. As results from our experiment, we obtain its frequencies are 2.5 and 2.2 THz at Bi(II) and Bi(III), respectively. Furthermore, photo-excited carrier relaxation indicates drastic changes near 2.5 GPa. Bismuth transforms from semimetal to semiconductor near 2.5 GPa, and band-overlapping between at L-point and at T-point disappears. We consider that the drastic changes of the photo-excited carrier relaxation are strongly correlated with the band-overlapping disappearing

  3. Biomass production from electricity using ammonia as an electron carrier in a reverse microbial fuel cell.

    Directory of Open Access Journals (Sweden)

    Wendell O Khunjar

    Full Text Available The storage of renewable electrical energy within chemical bonds of biofuels and other chemicals is a route to decreasing petroleum usage. A critical challenge is the efficient transfer of electrons into a biological host that can covert this energy into high energy organic compounds. In this paper, we describe an approach whereby biomass is grown using energy obtained from a soluble mediator that is regenerated electrochemically. The net result is a separate-stage reverse microbial fuel cell (rMFC that fixes CO₂ into biomass using electrical energy. We selected ammonia as a low cost, abundant, safe, and soluble redox mediator that facilitated energy transfer to biomass. Nitrosomonas europaea, a chemolithoautotroph, was used as the biocatalyst due to its inherent capability to utilize ammonia as its sole energy source for growth. An electrochemical reactor was designed for the regeneration of ammonia from nitrite, and current efficiencies of 100% were achieved. Calculations indicated that overall bioproduction efficiency could approach 2.7±0.2% under optimal electrolysis conditions. The application of chemolithoautotrophy for industrial bioproduction has been largely unexplored, and results suggest that this and related rMFC platforms may enable biofuel and related biochemical production.

  4. High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

    KAUST Repository

    Nazir, Safdar

    2011-08-05

    The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

  5. High energy electron positron physics

    International Nuclear Information System (INIS)

    Ali, A.; Soding, P.

    1987-01-01

    With the termination of the physics program at PETRA in a year from now, and with the start of TRISTAN and the SLC and later LEP, an era of e/sup +/e/sup -/ physics will come to an end and a new one begins. The field is changing from a field of a few specialists, to becoming one of the mainstream efforts of the high energy community. It seems appropriate at this moment to summarize what has been learned over the past years, in a way more useful to any high energy physicist in particular to newcomers in the e/sup +/e/sup -/ field. This is the purpose of the book. This book should be used as a reference for future workers in the field of e/sup +/e/sup -/ interactions. It includes the most relevant data, parametrizations, theoretical background, and a chapter on detectors. Contents: Foreword; Detectors for High Energy e/sup +/e/sup -/ Physics; Lepton Pair Production and Electroweak Parameters; Hadron Production, Strong and Electroweak Properties; tau Physics; Recent Results on the Charm Sector; Bottom Physics; Lifetime Measurements of tau, Charmed and Beauty Hadrons; Υ Spectroscopy; Hadronic Decays of the Υ; Quark and Gluon Fragmentation in the e/sup +/e/sup -/ Continuum; Jet Production and QCD; Two Photon Physics; Search for New Particles

  6. High energy electron multibeam diffraction and imaging

    International Nuclear Information System (INIS)

    Bourret, Alain.

    1980-04-01

    The different theories of dynamical scattering of electrons are firstly reviewed with special reference to their basis and the validity of the different approximations. Then after a short description of the different experimental set ups, structural analysis and the investigation of the optical potential by means of high energy electrons will be surveyed

  7. Synthesis of a smart pH-responsive magnetic nanocomposite as high loading carrier of pharmaceutical agents.

    Science.gov (United States)

    Berah, Razieh; Ghorbani, Mohsen; Moghadamnia, Ali Akbar

    2017-06-01

    To create facile external controlled drug delivery system, a magnetic porous carrier based on Tin oxide nanoparticles was synthesized by an inexpensive and versatile hydrothermal strategy and used for in-vitro process. Magnetic nanocomposites were qualified by Fourier Transform Infrared (FTIR), Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD), Vibrational Sample Magnetometer (VSM) and Transmission Electron Microscopy (TEM). Results showed that nanoparticles were synthesized successfully with good dispersion of magnetic nanoparticles in cavity, uniform particle size distribution with average size of 65nm and high magnetization of 33.75 emu/mg. Furthermore, the nano-porosity and magnetism allowed high efficiency and remote controlled drug release. In this study, anti-migraine Sumatriptan was used as drug sample and the effect of drug concentration, Fe/Sn ratio and loading time on drug absorption were investigated. The best result was checked for stability at body temperature and different body pH. The sample with drug concentration of 0.25(mg/ml), Fe/Sn=0.22 and loading time of 1.5h had the highest drug efficiency (70%). Finally, in order to simulate the in vivo process for in-vitro step, Amnion was used and drug diffusion rate was measured in different intervals and different pH values. The result illustrated that after 25h, diffusion reached 65% at pH=2 and 56% at pH=7, and then became constant. Based on the above mentioned results, the carrier has an acceptable in vitro yield and therefore could be chosen for future in vivo researches. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. High-efficient electron linacs

    International Nuclear Information System (INIS)

    Glavatskikh, K.V.; Zverev, B.V.; Kalyuzhnyj, V.E.; Morozov, V.L.; Nikolaev, S.V.; Plotnikov, S.N.; Sobenin, N.P.; Vovna, V.A.; Gryzlov, A.V.

    1993-01-01

    Comparison analysis of ELA on running and still waves designed for 10 MeV energy and with high efficiency is carried out. It is shown, that from the point of view of dimensions ELA with a still wave or that of a combined type is more preferable. From the point of view of impedance characteristics in any variant with application of magnetron as HF-generator it is necessary to implement special requirements to the accelerating structure if no ferrite isolation is provided in HF-channel. 3 refs., 4 figs., 1 tab

  9. Carrier drift transport of freezed-to-electron-hole-plasma indium

    International Nuclear Information System (INIS)

    Kopylov, V.N.; Yanchenko, S.S.

    1985-01-01

    Observation of galvanomagnetic waves in indium caused by carrier drift in a superposed electric field is reported. Experiments have shown the wave propagation to be of a unidirectional character. Characteristic ime of attenuation for the investigated sample (a approximately 4 cm, rho sub(300)/rho sub(T→0) approximately 4x10 5 ) is about 5s. Increase in temperature from 1.4 K to 4.2 K resulted in a higher wave attenuation, which is associated with growth (25 fold) of resistance for both the life time of excitations and drift current induced in the sample decrease. Thus, the presence of direct current can essentially change the electrodynamic properties of specific metal

  10. A simple approach for producing highly efficient DNA carriers with reduced toxicity based on modified polyallylamine

    Energy Technology Data Exchange (ETDEWEB)

    Oskuee, Reza Kazemi [Neurogenic Inflammation Research Center, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Department of Medical Biotechnology, School of Medicine, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Dosti, Fatemeh [School of Pharmacy, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Gholami, Leila [Targeted Drug Delivery Research Center, School of Medicine, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of); Malaekeh-Nikouei, Bizhan, E-mail: malaekehb@mums.ac.ir [Nanotechnology Research Center, School of Pharmacy, Mashhad University of Medical Sciences, Mashhad (Iran, Islamic Republic of)

    2015-04-01

    Nowadays gene delivery is a topic in many research studies. Non-viral vectors have many advantages over viral vectors in terms of safety, immunogenicity and gene carrying capacity but they suffer from low transfection efficiency and high toxicity. In this study, polyallylamine (PAA), the cationic polymer, has been modified with hydrophobic branches to increase the transfection efficiency of the polymer. Polyallylamine with molecular weights of 15 and 65 kDa was selected and grafted with butyl, hexyl and decyl acrylate at percentages of 10, 30 and 50. The ability of the modified polymer to condense DNA was examined by ethidium bromide test. The complex of modified polymer and DNA (polyplex) was characterized for size, zeta potential, transfection efficiency and cytotoxicity in Neuro2A cell lines. The results of ethidium bromide test showed that grafting of PAA decreased its ability for DNA condensation but vectors could still condense DNA at moderate and high carrier to DNA ratios. Most of polyplexes had particle size between 150 and 250 nm. The prepared vectors mainly showed positive zeta potential but carriers composed of PAA with high percentage of grafting had negative zeta potential. The best transfection activity was observed in vectors with hexyl acrylate chain. Grafting of polymer reduced its cytotoxicity especially at percentages of 30 and 50. The vectors based of PAA 15 kDa had better transfection efficiency than the vectors made of PAA 65 kDa. In conclusion, results of the present study indicated that grafting PAA 15 kDa with high percentages of hexyl acrylate can help to prepare vectors with better transfection efficiency and less cytotoxicity. - Highlights: • The modified polyallylamine was synthesized as a gene carrier. • Modification of polyallylamine (15 kDa) with high percentages of hexyl acrylate improved transfection activity remarkably. • Grafting of polymer with acrylate derivatives reduced polymer cytotoxicity especially at percentages of

  11. Characterization of Charge-Carrier Transport in Semicrystalline Polymers: Electronic Couplings, Site Energies, and Charge-Carrier Dynamics in Poly(bithiophene- alt -thienothiophene) [PBTTT

    KAUST Repository

    Poelking, Carl

    2013-01-31

    We establish a link between the microscopic ordering and the charge-transport parameters for a highly crystalline polymeric organic semiconductor, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). We find that the nematic and dynamic order parameters of the conjugated backbones, as well as their separation, evolve linearly with temperature, while the side-chain dynamic order parameter and backbone paracrystallinity change abruptly upon the (also experimentally observed) melting of the side chains around 400 K. The distribution of site energies follows the behavior of the backbone paracrystallinity and can be treated as static on the time scale of a single-charge transfer reaction. On the contrary, the electronic couplings between adjacent backbones are insensitive to side-chain melting and vary on a much faster time scale. The hole mobility, calculated after time-averaging of the electronic couplings, reproduces well the value measured in a short-channel thin-film transistor. The results underline that to secure efficient charge transport in lamellar arrangements of conjugated polymers: (i) the electronic couplings should present high average values and fast dynamics, and (ii) the energetic disorder (paracrystallinity) should be small. © 2013 American Chemical Society.

  12. Characterization of Charge-Carrier Transport in Semicrystalline Polymers: Electronic Couplings, Site Energies, and Charge-Carrier Dynamics in Poly(bithiophene- alt -thienothiophene) [PBTTT

    KAUST Repository

    Poelking, Carl; Cho, Eunkyung; Malafeev, Alexander; Ivanov, Viktor; Kremer, Kurt; Risko, Chad; Bré das, Jean-Luc; Andrienko, Denis

    2013-01-01

    We establish a link between the microscopic ordering and the charge-transport parameters for a highly crystalline polymeric organic semiconductor, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). We find that the nematic and dynamic order parameters of the conjugated backbones, as well as their separation, evolve linearly with temperature, while the side-chain dynamic order parameter and backbone paracrystallinity change abruptly upon the (also experimentally observed) melting of the side chains around 400 K. The distribution of site energies follows the behavior of the backbone paracrystallinity and can be treated as static on the time scale of a single-charge transfer reaction. On the contrary, the electronic couplings between adjacent backbones are insensitive to side-chain melting and vary on a much faster time scale. The hole mobility, calculated after time-averaging of the electronic couplings, reproduces well the value measured in a short-channel thin-film transistor. The results underline that to secure efficient charge transport in lamellar arrangements of conjugated polymers: (i) the electronic couplings should present high average values and fast dynamics, and (ii) the energetic disorder (paracrystallinity) should be small. © 2013 American Chemical Society.

  13. Both Hemophilia Health Care Providers and Hemophilia A Carriers Report that Carriers have Excessive Bleeding

    Science.gov (United States)

    Paroskie, Allison; Oso, Olatunde; DeBaun, Michael R.; Sidonio, Robert F

    2014-01-01

    Introduction Hemophilia A, the result of reduced factor VIII (FVIII) activity, is an X-linked recessive bleeding disorder. Previous reports of Hemophilia A carriers suggest an increased bleeding tendency. Our objective was to determine the attitudes and understanding of the Hemophilia A carrier bleeding phenotype, and opinions regarding timing of carrier testing from the perspective of both medical providers and affected patients. Data from this survey was used as preliminary data for an ongoing prospective study. Material and Methods An electronic survey was distributed to physicians and nurses employed at Hemophilia Treatment Centers (HTC), and Hemophilia A carriers who were members of Hemophilia Federation of America. Questions focused on the clinical understanding of bleeding symptoms and management of Hemophilia A carriers, and the timing and intensity of carrier testing. Results Our survey indicates that 51% (36/51) of providers compared to 78% (36/46) of carriers believe that Hemophilia A carriers with normal FVIII activity have an increased bleeding tendency (pHemophilia A carriers report a high frequency of bleeding symptoms. Regarding carrier testing, 72% (50/69) of medical providers recommend testing after 14 years of age, conversely 65% (29/45) of Hemophilia A carriers prefer testing to be done prior to this age (pHemophilia A carriers self-report a higher frequency of bleeding than previously acknowledged, and have a preference for earlier testing to confirm carrier status. PMID:24309601

  14. Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

    2018-01-01

    We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

  15. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.; Mejia, I.; Hovarth, J.; Alshareef, Husam N.; Cha, D. K.; Ramirez-Bon, R.; Gnade, B. E.; Quevedo-Lopez, M. A.

    2010-01-01

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  16. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.

    2010-06-29

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  17. Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS2 Monolayer by Strain Engineering: First-Principle Calculations

    Science.gov (United States)

    Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Hieu, Nguyen V.; Thu, Tran V.; Hung, Nguyen M.; Ilyasov, Victor V.; Poklonski, Nikolai A.; Nguyen, Chuong V.

    2018-01-01

    In this paper, we studied the electronic properties, effective masses, and carrier mobility of monolayer MoS_2 using density functional theory calculations. The carrier mobility was considered by means of ab initio calculations using the Boltzmann transport equation coupled with deformation potential theory. The effects of mechanical biaxial strain on the electronic properties, effective mass, and carrier mobility of monolayer MoS_2 were also investigated. It is demonstrated that the electronic properties, such as band structure and density of state, of monolayer MoS_2 are very sensitive to biaxial strain, leading to a direct-indirect transition in semiconductor monolayer MoS_2. Moreover, we found that the carrier mobility and effective mass can be enhanced significantly by biaxial strain and by lowering temperature. The electron mobility increases over 12 times with a biaxial strain of 10%, while the carrier mobility gradually decreases with increasing temperature. These results are very useful for the future nanotechnology, and they make monolayer MoS_2 a promising candidate for application in nanoelectronic and optoelectronic devices.

  18. Influence of the number of layers on ultrathin CsSnI3 perovskite: from electronic structure to carrier mobility

    Science.gov (United States)

    Liu, Biao; Long, Mengqiu; Cai, Meng-Qiu; Yang, Junliang

    2018-03-01

    Inorganic halide perovskites have attracted great attention in recent years as promising materials for optoelectronic devices, with ultrathin inorganic halide perovskites showing excellent properties and great potential applications. Herein, the intrinsic electronic and optical properties of ultrathin cesium tin tri-iodide (CsSnI3) perovskite with a varying number of layers are explored using first-principles calculations. The results reveal that ultrathin CsSnI3 is a direct band gap semiconductor, and the band gap continues to increase to 1.83 eV from 1.28 eV as the number of layers is reduced to one layer from the bulk. By decreasing the number of layers, the effective mass of ultrathin CsSnI3 increases, and the optical absorption intensity along the x and y directions shows that the linear dichroism becomes stronger and stronger. Furthermore, the carrier mobilities (µ) can be predicted, and they show obvious in-plane anisotropy. The µ of the electrons is higher than that of the holes, and the electron mobility along the y direction is higher than that along the x direction. The layer thickness does not distinctly influence the µ. The difference in the atomic orbital distribution has the nature of obvious anisotropy in ultrathin CsSnI3. This work suggests that ultrathin inorganic perovskite could be a potential candidate for future nano-optoelectronic devices.

  19. Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

    KAUST Repository

    Janjua, Bilal; Ng, Tien Khee; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2014-01-01

    is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed

  20. Development and comparison of new high-efficiency dry powder inhalers for carrier-free formulations.

    Science.gov (United States)

    Behara, Srinivas R B; Longest, P Worth; Farkas, Dale R; Hindle, Michael

    2014-02-01

    High-efficiency dry powder inhalers (DPIs) were developed and tested for use with carrier-free formulations across a range of different inhalation flow rates. Performance of a previously reported DPI was compared with two new designs in terms of emitted dose (ED) and aerosolization characteristics using in vitro experiments. The two new designs oriented the capsule chamber (CC) at different angles to the main flow passage, which contained a three-dimensional (3D) rod array for aerosol deaggregation. Computational fluid dynamics simulations of a previously developed deaggregation parameter, the nondimensional specific dissipation (NDSD), were used to explain device performance. Orienting the CC at 90° to the mouthpiece, the CC90 -3D inhaler provided the best performance with an ED = 73.4%, fine particle fractions (FPFs) less than 5 and 1 μm of 95.1% and 31.4%, respectively, and a mass median aerodynamic diameter (MMAD) = 1.5 μm. For the carrier-free formulation, deaggregation was primarily influenced by capsule aperture position and the NDSD parameter. The new CC-3D inhalers reduced the percent difference in FPF and MMAD between low and high flows by 1-2 orders of magnitude compared with current commercial devices. In conclusion, the new CC-3D inhalers produced extremely high-quality aerosols with little sensitivity to flow rate and are expected to deliver approximately 95% of the ED to the lungs. © 2013 Wiley Periodicals, Inc. and the American Pharmacists Association.

  1. Deep Trek High Temperature Electronics Project

    Energy Technology Data Exchange (ETDEWEB)

    Bruce Ohme

    2007-07-31

    This report summarizes technical progress achieved during the cooperative research agreement between Honeywell and U.S. Department of Energy to develop high-temperature electronics. Objects of this development included Silicon-on-Insulator (SOI) wafer process development for high temperature, supporting design tools and libraries, and high temperature integrated circuit component development including FPGA, EEPROM, high-resolution A-to-D converter, and a precision amplifier.

  2. Compact high-current, subnanosecond electron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Shpak, V G; Shunajlov, S A; Ulmaskulov, M R; Yalandin, M I [Russian Academy of Sciences, Ekaterinburg (Russian Federation). Inst. of Electrophysics; Pegel, I V [Russian Academy of Sciences, Tomsk (Russian Federation). High-Current Electronics Inst.; Tarakanov, V P [Russian Academy of Sciences, Moscow (Russian Federation). High-Temperature Inst.

    1997-12-31

    A compact subnanosecond, high-current electron accelerator producing an annular electron beam of duration up to 300 - 400 ps, energy about 250 keV, and current up to 1 kA has been developed to study transient processes in pulsed power microwave devices. The measuring and recording techniques used to experimentally investigate the dynamics of the beam current pulse and the transformation of the electron energy during the transportation of the beam in a longitudinal magnetic field are described. The experimental data obtained are compared with the predictions of a numerical simulation. (author). 6 figs., 5 refs.

  3. High electron thermal conductivity of chiral carbon nanotubes

    International Nuclear Information System (INIS)

    Mensah, S.Y.; Allotey, F.K.A.; Nkrumah, George; Mensah, N.G.

    2003-11-01

    Solving the Boltzmann kinetic equation with energy dispersion relation obtained in the tight binding approximation, the carrier thermal conductivity κ e of a chiral carbon nanotube (CCNT) was determined. The dependence of κ e on temperature T, chiral geometric angle φ h and overlap integrals Δ z and Δ s were obtained. The results were numerically analysed. Unusually high values of κ e were observed suggesting that ne is nontrivial in the calculation of the thermal conductivity κ of CCNT. More interestingly we noted also that at 104 K and for Δ z and Δ s values of 0.020 eV and 0.0150 eV respectively the κ e value is about 41000 W/mK as reported for a 99.9% pure 12 C crystal. We predict that the electron thermal conductivity of CCNT should exceed 200,000 W/mK at ∼ 80 K. (author)

  4. Electron spin resonance of paramagnetic defects and related charge carrier traps in complex oxide scintillators

    Czech Academy of Sciences Publication Activity Database

    Laguta, Valentyn; Nikl, Martin

    2013-01-01

    Roč. 250, č. 2 (2013), s. 254-260 ISSN 0370-1972 R&D Projects: GA MŠk(CZ) LM2011029; GA ČR GAP204/12/0805; GA AV ČR IAA100100810 Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132 Institutional support: RVO:68378271 Keywords : scintillators * point defects * electron spin resonance * polarons Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.605, year: 2013

  5. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Duc, Tran Thien [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Pozina, Galia; Son, Nguyen Tien; Kordina, Olof; Janzén, Erik; Hemmingsson, Carl [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

    2016-03-07

    Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.

  6. Highly immunogenic and fully synthetic peptide-carrier constructs targetting GnRH

    DEFF Research Database (Denmark)

    Beekman, N.J.C.M.; Schaaper, W.M.M.; Turkstra, J.A.

    1999-01-01

    To use peptides as synthetic vaccines, they have to be coupled to a carrier protein to make them more immunogenic. Coupling efficiency between a carrier protein and a peptide, however, is difficult to control with respect to loading density of the peptide, This makes these carrier proteins poorly...... for the induction of antibodies against GnRH and immunocastration of pigs....

  7. High-field electron-photon interactions

    International Nuclear Information System (INIS)

    Hartemann, F V.

    1999-01-01

    Recent advances in novel technologies (including chirped-pulse amplification, femtosecond laser systems operating in the TW-PW range, high-gradient rf photoinjectors, and synchronized relativistic electron bunches with subpicosecond durations and THz bandwidths) allow experimentalists to study the interaction of relativistic electrons with ultrahigh-intensity photon fields. Ponderomotive scattering can accelerate these electrons with extremely high gradients in a three-dimensional vacuum laser focus. The nonlinear Doppler shift induced by relativistic radiation pressure in Compton backscattering is shown to yield complex nonlinear spectra which can be modified by using temporal laser pulse shaping techniques. Colliding laser pulses, where ponderomotive acceleration and Compton backscattering are combined, could also yield extremely short wavelength photons. Finally, one expects strong radiative corrections when the Doppler-upshifted laser wavelength approaches the Compton scale. These are discussed within the context of high-field classical electrodynamics, a new discipline borne out of the aforementioned innovations

  8. High Thermoelectric Power Factor of High-Mobility 2D Electron Gas.

    Science.gov (United States)

    Ohta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu

    2018-01-01

    Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower ( S ), high electrical conductivity (σ), and low thermal conductivity (κ). State-of-the-art nanostructuring techniques that significantly reduce κ have realized high-performance thermoelectric materials with a figure of merit ( ZT = S 2 ∙σ∙ T ∙κ -1 ) between 1.5 and 2. Although the power factor (PF = S 2 ∙σ) must also be enhanced to further improve ZT , the maximum PF remains near 1.5-4 mW m -1 K -2 due to the well-known trade-off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and σ of the high-mobility electron gas from -490 µV K -1 and ≈10 -1 S cm -1 to -90 µV K -1 and ≈10 4 S cm -1 , while maintaining a high carrier mobility (≈1500 cm 2 V -1 s -1 ). The maximized PF of the high-mobility electron gas is ≈9 mW m -1 K -2 , which is a two- to sixfold increase compared to state-of-the-art practical thermoelectric materials.

  9. Improvement of the butanol production selectivity and butanol to acetone ratio (B:A) by addition of electron carriers in the batch culture of a new local isolate of Clostridium acetobutylicum YM1.

    Science.gov (United States)

    Nasser Al-Shorgani, Najeeb Kaid; Kalil, Mohd Sahaid; Wan Yusoff, Wan Mohtar; Shukor, Hafiza; Hamid, Aidil Abdul

    2015-12-01

    Improvement in the butanol production selectivity or enhanced butanol:acetone ratio (B:A) is desirable in acetone-butanol-ethanol (ABE) fermentation by Clostridium strains. In this study, artificial electron carriers were added to the fermentation medium of a new isolate of Clostridium acetobutylicum YM1 in order to improve the butanol yield and B:A ratio. The results revealed that medium supplementation with electron carriers changed the metabolism flux of electron and carbon in ABE fermentation by YM1. A decrease in acetone production, which subsequently improved the B:A ratio, was observed. Further improvement in the butanol production and B:A ratios were obtained when the fermentation medium was supplemented with butyric acid. The maximum butanol production (18.20 ± 1.38 g/L) was gained when a combination of methyl red and butyric acid was added. Although the addition of benzyl viologen (0.1 mM) and butyric acid resulted in high a B:A ratio of 16:1 (800% increment compared with the conventional 2:1 ratio), the addition of benzyl viologen to the culture after 4 h resulted in the production of 18.05 g/L butanol. Manipulating the metabolic flux to butanol through the addition of electron carriers could become an alternative strategy to achieve higher butanol productivity and improve the B:A ratio. Copyright © 2015 Elsevier Ltd. All rights reserved.

  10. Highly efficient low color temperature organic LED using blend carrier modulation layer

    Science.gov (United States)

    Hsieh, Yao-Ching; Chen, Szu-Hao; Shen, Shih-Ming; Wang, Ching-Chiun; Chen, Chien-Chih; Jou, Jwo-Huei

    2012-10-01

    Color temperature (CT) of light has great effect on human physiology and psychology, and low CT light, minimizing melatonin suppression and decreasing the risk of breast, colorectal, and prostate cancer. We demonstrates the incorporation of a blend carrier modulation interlayer (CML) between emissive layers to improve the device performance of low CT organic light emitting diodes, which exhibits an external quantum efficiency of 22.7% and 36 lm W-1 (54 cd A-1) with 1880 K at 100 cd m-2, or 20.8% and 29 lm W-1 (50 cd A-1) with 1940 K at 1000 cd m-2. The result shows a CT much lower than that of incandescent bulbs, which is 2500 K with 15 lmW-1 efficiency, and even as low as that of candles, which is 2000 K with 0.1 lmW-1. The high efficiency of the proposed device may be attributed to its CML, which helps effectively distribute the entering carriers into the available recombination zones.

  11. Impact of speciation on the electron charge transfer properties of nanodiamond drug carriers.

    Science.gov (United States)

    Sun, Baichuan; Barnard, Amanda S

    2016-08-07

    Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove useful in designing drug delivery systems where the release of (selected) drugs needs to be sensitive to specific conditions at the point of delivery.

  12. Electron drift time in silicon drift detectors: A technique for high precision measurement of electron drift mobility

    International Nuclear Information System (INIS)

    Castoldi, A.; Rehak, P.

    1995-01-01

    This paper presents a precise absolute measurement of the drift velocity and mobility of electrons in high resistivity silicon at room temperature. The electron velocity is obtained from the differential measurement of the drift time of an electron cloud in a silicon drift detector. The main features of the transport scheme of this class of detectors are: the high uniformity of the electron motion, the transport of the signal electrons entirely contained in the high-purity bulk, the low noise timing due to the very small anode capacitance (typical value 100 fF), and the possibility to measure different drift distances, up to the wafer diameter, in the same semiconductor sample. These features make the silicon drift detector an optimal device for high precision measurements of carrier drift properties. The electron drift velocity and mobility in a 10 kΩ cm NTD n-type silicon wafer have been measured as a function of the electric field in the range of possible operation of a typical drift detector (167--633 V/cm). The electron ohmic mobility is found to be 1394 cm 2 /V s. The measurement precision is better than 1%. copyright 1995 American Institute of Physics

  13. High Energy Electron Detectors on Sphinx

    Science.gov (United States)

    Thompson, J. R.; Porte, A.; Zucchini, F.; Calamy, H.; Auriel, G.; Coleman, P. L.; Bayol, F.; Lalle, B.; Krishnan, M.; Wilson, K.

    2008-11-01

    Z-pinch plasma radiation sources are used to dose test objects with K-shell (˜1-4keV) x-rays. The implosion physics can produce high energy electrons (> 50keV), which could distort interpretation of the soft x-ray effects. We describe the design and implementation of a diagnostic suite to characterize the electron environment of Al wire and Ar gas puff z-pinches on Sphinx. The design used ITS calculations to model detector response to both soft x-rays and electrons and help set upper bounds to the spurious electron flux. Strategies to discriminate between the known soft x-ray emission and the suspected electron flux will be discussed. H.Calamy et al, ``Use of microsecond current prepulse for dramatic improvements of wire array Z-pinch implosion,'' Phys Plasmas 15, 012701 (2008) J.A.Halbleib et al, ``ITS: the integrated TIGER series of electron/photon transport codes-Version 3.0,'' IEEE Trans on Nuclear Sci, 39, 1025 (1992)

  14. High Performance Electronics on Flexible Silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-09-01

    Over the last few years, flexible electronic systems have gained increased attention from researchers around the world because of their potential to create new applications such as flexible displays, flexible energy harvesters, artificial skin, and health monitoring systems that cannot be integrated with conventional wafer based complementary metal oxide semiconductor processes. Most of the current efforts to create flexible high performance devices are based on the use of organic semiconductors. However, inherent material\\'s limitations make them unsuitable for big data processing and high speed communications. The objective of my doctoral dissertation is to develop integration processes that allow the transformation of rigid high performance electronics into flexible ones while maintaining their performance and cost. In this work, two different techniques to transform inorganic complementary metal-oxide-semiconductor electronics into flexible ones have been developed using industry compatible processes. Furthermore, these techniques were used to realize flexible discrete devices and circuits which include metal-oxide-semiconductor field-effect-transistors, the first demonstration of flexible Fin-field-effect-transistors, and metal-oxide-semiconductors-based circuits. Finally, this thesis presents a new technique to package, integrate, and interconnect flexible high performance electronics using low cost additive manufacturing techniques such as 3D printing and inkjet printing. This thesis contains in depth studies on electrical, mechanical, and thermal properties of the fabricated devices.

  15. High energy electron irradiation of flowable materials

    International Nuclear Information System (INIS)

    Offermann, B.P.

    1975-01-01

    In order to efficiently irradiate a flowable material with high energy electrons, a hollow body is disposed in a container for the material and the material is caused to flow in the form of a thin layer across a surface of the body from or to the interior of the container while the material flowing across the body surface is irradiated. (U.S.)

  16. KEK/NAGOYA/SLAC: Highly polarized electrons

    International Nuclear Information System (INIS)

    Anon.

    1994-01-01

    In the push by the Japanese KEK Laboratory, in collaboration with university groups and overseas laboratories, to develop new techniques for the future Japan electronpositron collider (JLC), a recent achievement is a significant increase in the efficient yield of highly polarized electrons

  17. Decal Electronics: Printable Packaged with 3D Printing High-Performance Flexible CMOS Electronic Systems

    KAUST Repository

    Sevilla, Galo T.

    2016-10-14

    High-performance complementary metal oxide semiconductor electronics are flexed, packaged using 3D printing as decal electronics, and then printed in roll-to-roll fashion for highly manufacturable printed flexible high-performance electronic systems.

  18. Decal Electronics: Printable Packaged with 3D Printing High-Performance Flexible CMOS Electronic Systems

    KAUST Repository

    Sevilla, Galo T.; Cordero, Marlon D.; Nassar, Joanna M.; Hanna, Amir; Kutbee, Arwa T.; Carreno, Armando Arpys Arevalo; Hussain, Muhammad Mustafa

    2016-01-01

    High-performance complementary metal oxide semiconductor electronics are flexed, packaged using 3D printing as decal electronics, and then printed in roll-to-roll fashion for highly manufacturable printed flexible high-performance electronic systems.

  19. Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

    International Nuclear Information System (INIS)

    Parker, David; Singh, David J

    2012-01-01

    We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi 2 and find that at temperatures of 900-1250 K and electron dopings of 1-4 × 10 21 cm -3 , thermopowers as large in magnitude as 200 μV K -1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping. (paper)

  20. High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

    KAUST Repository

    Torres, Carlos M.

    2015-12-09

    The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

  1. High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

    KAUST Repository

    Torres, Carlos M.; Lan, Yann Wen; Zeng, Caifu; Chen, Jyun Hong; Kou, Xufeng; Navabi, Aryan; Tang, Jianshi; Montazeri, Mohammad; Adleman, James R.; Lerner, Mitchell B.; Zhong, Yuan Liang; Li, Lain-Jong; Chen, Chii Dong; Wang, Kang L.

    2015-01-01

    The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

  2. Kinetic Monte Carlo Modeling of Charge Carriers in Organic Electronic Devices: Suppression of the Self-Interaction Error

    KAUST Repository

    Li, Haoyuan

    2017-05-18

    Kinetic Monte Carlo (KMC) simulations have emerged as an important tool to help improve the efficiency of organic electronic devices by providing a better understanding of their device physics. In the KMC simulation of an organic device, the reliability of the results depends critically on the accuracy of the chosen charge-transfer rates, which are themselves strongly influenced by the site-energy differences. These site-energy differences include components coming from the electrostatic forces present in the system, which are often evaluated through electric potentials described by the Poisson equation. Here we show that the charge-carrier self-interaction errors that appear when evaluating the site-energy differences can lead to unreliable simulation results. To eliminate these errors, we propose two approaches that are also found to reduce the impact of finite-size effects. As a consequence, reliable results can be obtained at reduced computational costs. The proposed methodologies can be extended to other device simulation techniques as well.

  3. High prevalence of asymptomatic carriers of Tropheryma whipplei in different populations from the North of Spain.

    Science.gov (United States)

    García-Álvarez, Lara; Pérez-Matute, Patricia; Blanco, José Ramón; Ibarra, Valvanera; Oteo, José Antonio

    2016-01-01

    Tropheryma whipplei is the causative agent of Whipple disease. T. whipplei has also been detected in asymptomatic carriers with a very different prevalence. To date, in Spain, there are no data regarding the prevalence of T. whipplei in a healthy population or in HIV-positive patients, or in chronic fatigue syndrome (CFS). Therefore, the aim of this work was to assess the prevalence of T. whipplei in stools in those populations. Stools from 21 HIV-negative subjects, 65 HIV-infected, and 12 CFS patients were analysed using real time-PCR. HIV-negative and positive subjects were divided into two groups, depending on the presence/absence of metabolic syndrome (MS). Positive samples were sequenced. The prevalence of T. whipplei was 25.51% in 98 stool samples analysed. Prevalence in HIV-positive patients was significantly higher than in HIV-negative (33.8% vs. 9.09%, p=0.008). Prevalence in the control group with no associated diseases was 20%, whereas no positive samples were observed in HIV-negative patients with MS, or in those diagnosed with CFS. The prevalence observed in HIV-positive patients without MS was 30.35%, and with MS it was 55.5%. The number of positive samples varies depending on the primers used, although no statistically significant differences were observed. There is a high prevalence of asymptomatic carriers of T. whipplei among healthy and in HIV-infected people from Spain. The role of T. whipplei in HIV patients with MS is unclear, but the prevalence is higher than in other populations. Copyright © 2015 Elsevier España, S.L.U. and Sociedad Española de Enfermedades Infecciosas y Microbiología Clínica. All rights reserved.

  4. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

    KAUST Repository

    Janjua, Bilal

    2014-02-27

    A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

  5. Enhancing carrier injection in the active region of a 280nm emission wavelength LED using graded hole and electron blocking layers

    KAUST Repository

    Janjua, Bilal; Ng, Tien Khee; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2014-01-01

    A theoretical investigation of AlGaN UV-LED with band engineering of hole and electron blocking layers (HBL and EBL, respectively) was conducted with an aim to improve injection efficiency and reduce efficiency droop in the UV LEDs. The analysis is based on energy band diagrams, carrier distribution and recombination rates (Shockley-Reed-Hall, Auger, and radiative recombination rates) in the quantum well, under equilibrium and forward bias conditions. Electron blocking layer is based on AlaGa1-aN / Al b → cGa1-b → 1-cN / AldGa 1-dN, where a < d < b < c. A graded layer sandwiched between large bandgap AlGaN materials was found to be effective in simultaneously blocking electrons and providing polarization field enhanced carrier injection. The graded interlayer reduces polarization induced band bending and mitigates the related drawback of impediment of holes injection. Similarly on the n-side, the Alx → yGa1-x → 1-yN / AlzGa 1-zN (x < z < y) barrier acts as a hole blocking layer. The reduced carrier leakage and enhanced carrier density in the active region results in significant improvement in radiative recombination rate compared to a structure with the conventional rectangular EBL layers. The improvement in device performance comes from meticulously designing the hole and electron blocking layers to increase carrier injection efficiency. The quantum well based UV-LED was designed to emit at 280nm, which is an effective wavelength for water disinfection application.

  6. Highly stable microwave carrier generation using a dual-frequency distributed feedback laser

    NARCIS (Netherlands)

    Khan, M.R.H.; Bernhardi, Edward; Marpaung, D.A.I.; Burla, M.; de Ridder, R.M.; Worhoff, Kerstin; Pollnau, Markus; Roeloffzen, C.G.H.

    2012-01-01

    Photonic generation of microwave carriers by using a dual-frequency distributed feedback waveguide laser in ytterbium-doped aluminum oxide is demonstrated. A highperformance optical frequency locked loop is implemented to stabilize the microwave carrier. This approach results in a microwave

  7. Considerations for high-brightness electron sources

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1990-01-01

    Particle accelerators are now used in many areas of physics research and in industrial and medical applications. New uses are being studied to address major societal needs in energy production, materials research, generation of intense beams of radiation at optical and suboptical wavelengths, treatment of various kinds of waste, and so on. Many of these modern applications require a high intensity beam at the desired energy, along with a very good beam quality in terms of the beam confinement, aiming, or focusing. Considerations for ion and electron accelerators are often different, but there are also many commonalties, and in fact, techniques derived for one should perhaps more often be considered for the other as well. We discuss some aspects of high-brightness electron sources here from that point of view. 6 refs

  8. High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

    Science.gov (United States)

    Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

    2017-04-01

    In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

  9. Electronics, information, Communication and high technology

    International Nuclear Information System (INIS)

    1999-11-01

    The contents of this book are summary of investigation, investigation system, purpose of investigation, characteristic of this investigation, important studying and development filed, compare of the level of research and development, policy, characteristic of the respondent, a future illustration in 2025 cause of hindrance of realization, propel method of research and development, the prediction of the realization period the result of investigation in electronics, information communication and high technology.

  10. The Effects of L2C Signal Tracking on High-Precision Carrier Phase GPS Positioning

    Science.gov (United States)

    Berglund, H.; Blume, F.; Estey, L. H.; Borsa, A. A.

    2010-12-01

    In 2005, the L2C signal was introduced to improve the accuracy, tracking and redundancy of the GPS system for civilian users. The L2C signal also provides improved SNR data when compared with the L2P(Y) legacy signal, comparable to that of the L1 C/A-code, which allows for better tracking at lower elevations. With the recent launch of the first block II-F satellite (SVN62/PRN25), there are 8 healthy satellites broadcasting L2C signals, or 25% of the constellation. However, GNSS network operators such as the UNAVCO Plate Boundary Observatory (PBO) have been hesitant to use the new signal as it is not well determined how tracking and logging L2C could affect the positions derived from L2 carrier phase measurements for a given receiver. The L2C carrier phase is in quadrature (90° out of phase) with the L2P(Y) phase that has been used by high-precision positioning software since the beginning of GPS. To complicate matters further, some receiver manufacturers (e.g. Trimble) correct for this when logging L2C phase while others (e.g. Topcon) do not. The L2C capability of receivers currently in widespread use in permanent networks can depend on firmware as well as hardware; in some cases receivers can simultaneously track L2C and L2P(Y) phases and some can track only one or the other, and the resulting observation files can depend on how individual operators configure the devices. In cases where both L2C and L2P(Y) are logged simultaneously, translation software (such as UNAVCO’s teqc) must be used carefully in order to select which L2 observation is written to RINEX (2.11) and used in positioning. Modifications were recently made to teqc to eliminate potential confusion in that part of the process; if L2C code observations appear in a RINEX (2.11) file produced by teqc, the L2 phase and S2 SNR observations were from the L2C carrier for those satellites. To date L2C analyses have been restricted to special applications such as snow depth and soil moisture using SNR data

  11. Physics of high intensity nanosecond electron source

    International Nuclear Information System (INIS)

    Herrera-Gomez, A.; Spicer, W.E.

    1993-08-01

    A new high-intensity, short-time electron source is now being used at the Stanford Linear Accelerator Center (SLAC). Using a GaAs negative affinity semiconductor in the construction of the cathode, it is possible to fulfill operation requirements such as peak currents of tens of amperes, peak widths of the order of nanoseconds, hundreds of hours of operation stability, and electron spin polarization. The cathode is illuminated with high intensity laser pulses, and photoemitted electrons constitute the yield. Because of the high currents, some nonlinear effects are present. Very noticeable is the so-called Charge Limit (CL) effect, which consists of a limit on the total charge in each pulse-that is, the total bunch charge stops increasing as the light pulse total energy increases. In this paper, we explain the mechanism of the CL and how it is caused by the photovoltaic effect. Our treatment is based on the Three-Step model of photoemission. We relate the CL to the characteristics of the surface and bulk of the semiconductor, such as doping, band bending, surface vacuum level, and density of surface states. We also discuss possible ways to prevent the Char's Level effect

  12. Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

    Directory of Open Access Journals (Sweden)

    Charith Jayanada Koswaththage

    2016-11-01

    Full Text Available InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.

  13. Highly integrated electronics for the star TPC

    Energy Technology Data Exchange (ETDEWEB)

    Arthur, A.A.; Bieser, F.; Hearn, W.; Kleinfelder, S.; Merrick, T.; Millaud, J.; Noggle, T.; Rai, G.; Ritter, H.G.; Wieman, H. [Lawrence Berkeley Laboratory, CA (United States)

    1991-12-31

    The concept for the STAR TPC front-end electronics is presented and the progress toward the development of a fully integrated solution is described. It is the goal of the R+D program to develop the complete electronics chain for the STAR central TPC detector at RHIC. It is obvious that solutions chosen e.g. for ALEPH are not adequate for the 150000 channels that need to be instrumented for readout. It will be necessary to perform all the signal processing, digitization and multiplexing directly on the detector in order to reduce per channel cost and the amount of cabling necessary to read out the information. We follow the approach chosen by the EOS TPC project, where the readout electronics on the detector consists of an integrated preamplifier, a hybrid shaping amplifier, an integrated switched capacitor array and a highly multiplexed ADC. The STAR electronics will be further integrated so that approximately 16 channels of the preamplifier, the shaper, the analog store and the ADC will be contained in two integrated circuits located directly on the pad plane.

  14. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  15. The mitochondrial pyruvate carrier mediates high fat diet-induced increases in hepatic TCA cycle capacity.

    Science.gov (United States)

    Rauckhorst, Adam J; Gray, Lawrence R; Sheldon, Ryan D; Fu, Xiaorong; Pewa, Alvin D; Feddersen, Charlotte R; Dupuy, Adam J; Gibson-Corley, Katherine N; Cox, James E; Burgess, Shawn C; Taylor, Eric B

    2017-11-01

    Excessive hepatic gluconeogenesis is a defining feature of type 2 diabetes (T2D). Most gluconeogenic flux is routed through mitochondria. The mitochondrial pyruvate carrier (MPC) transports pyruvate from the cytosol into the mitochondrial matrix, thereby gating pyruvate-driven gluconeogenesis. Disruption of the hepatocyte MPC attenuates hyperglycemia in mice during high fat diet (HFD)-induced obesity but exerts minimal effects on glycemia in normal chow diet (NCD)-fed conditions. The goal of this investigation was to test whether hepatocyte MPC disruption provides sustained protection from hyperglycemia during long-term HFD and the differential effects of hepatocyte MPC disruption on TCA cycle metabolism in NCD versus HFD conditions. We utilized long-term high fat feeding, serial measurements of postabsorptive blood glucose and metabolomic profiling and 13 C-lactate/ 13 C-pyruvate tracing to investigate the contribution of the MPC to hyperglycemia and altered hepatic TCA cycle metabolism during HFD-induced obesity. Hepatocyte MPC disruption resulted in long-term attenuation of hyperglycemia induced by HFD. HFD increased hepatic mitochondrial pyruvate utilization and TCA cycle capacity in an MPC-dependent manner. Furthermore, MPC disruption decreased progression of fibrosis and levels of transcript markers of inflammation. By contributing to chronic hyperglycemia, fibrosis, and TCA cycle expansion, the hepatocyte MPC is a key mediator of the pathophysiology induced in the HFD model of T2D. Copyright © 2017 The Authors. Published by Elsevier GmbH.. All rights reserved.

  16. Extremely high frequency RF effects on electronics.

    Energy Technology Data Exchange (ETDEWEB)

    Loubriel, Guillermo Manuel; Vigliano, David; Coleman, Phillip Dale; Williams, Jeffery Thomas; Wouters, Gregg A.; Bacon, Larry Donald; Mar, Alan

    2012-01-01

    The objective of this work was to understand the fundamental physics of extremely high frequency RF effects on electronics. To accomplish this objective, we produced models, conducted simulations, and performed measurements to identify the mechanisms of effects as frequency increases into the millimeter-wave regime. Our purpose was to answer the questions, 'What are the tradeoffs between coupling, transmission losses, and device responses as frequency increases?', and, 'How high in frequency do effects on electronic systems continue to occur?' Using full wave electromagnetics codes and a transmission-line/circuit code, we investigated how extremely high-frequency RF propagates on wires and printed circuit board traces. We investigated both field-to-wire coupling and direct illumination of printed circuit boards to determine the significant mechanisms for inducing currents at device terminals. We measured coupling to wires and attenuation along wires for comparison to the simulations, looking at plane-wave coupling as it launches modes onto single and multiconductor structures. We simulated the response of discrete and integrated circuit semiconductor devices to those high-frequency currents and voltages, using SGFramework, the open-source General-purpose Semiconductor Simulator (gss), and Sandia's Charon semiconductor device physics codes. This report documents our findings.

  17. High-intensity-laser-electron scattering

    International Nuclear Information System (INIS)

    Meyerhofer, D.D.

    1997-01-01

    In the field of an intense laser, photon-electron scattering becomes nonlinear when the oscillatory energy of the electron approaches its rest mass. The electron wave function is dressed by the field with a concomitant increase in the effective electron mass. When the photon energy in the electron rest frame is comparable to the electron rest mass, multiphoton Compton scattering occurs. When the photon energy is significantly lower than the electron rest mass, the electron acquires momentum from the photon field and emits harmonics. This paper reviews nonlinear photon-electron scattering processes and results from two recent experiments where they have been observed

  18. Ultrafast nonlinear carrier dynamics in doped semiconductors in high THz fields

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2011-01-01

    THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses.......THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses....

  19. High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

    KAUST Repository

    Hou, Zhipeng

    2015-12-18

    Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000cm2/Vs with a nonsaturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov–de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our findings provide a different approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

  20. Highly efficient hybrid photovoltaics based on hyperbranched three-dimensional TiO2 electron transporting materials

    KAUST Repository

    Mahmood, Khalid; Swain, Bhabani Sankar; Amassian, Aram

    2015-01-01

    A 3D hyperbranched TiO2 electron transporting material is demonstrated, which exhibits superior carrier transport and lifetime, as well as excellent infiltration, leading to highly efficient mesostructured hybrid solar cells, such as lead-halide perovskites (15.5%) and dye-sensitized solar cells (11.2%).

  1. Highly efficient hybrid photovoltaics based on hyperbranched three-dimensional TiO2 electron transporting materials

    KAUST Repository

    Mahmood, Khalid

    2015-03-23

    A 3D hyperbranched TiO2 electron transporting material is demonstrated, which exhibits superior carrier transport and lifetime, as well as excellent infiltration, leading to highly efficient mesostructured hybrid solar cells, such as lead-halide perovskites (15.5%) and dye-sensitized solar cells (11.2%).

  2. Electronics for very high rate tracking detectors

    International Nuclear Information System (INIS)

    Williams, H.H.; Dressnandt, N.; Ekenberg, T.; Gerds, E.J.; Newcomer, F.M.; Tedja, S.; Van Berg, R.; Van der Speigel, J.

    1995-01-01

    Results are presented on a system of electronics designed for very high rate tracking detectors at the SSC and LHC. The primary goal was a system for signal detection, time measurement, and readout for the straw tracker for SDC. An integrated circuit incorporating eight channels of amplifier-shaper-discriminator (including detector tail cancellation), and two different integrated circuits for time measurement are described. The performance of tracking measurements up to counting rates of 8 MHz per wire is reported, as well as preliminary results from a baseline restoration circuit. (orig.)

  3. Investigation of carriers of lustrous carbon at high temperatures by infrared spectroscopy (FTIR

    Directory of Open Access Journals (Sweden)

    S. Eichholz

    2010-10-01

    Full Text Available Lustrous carbon is very important in processes of iron casting in green sand. Lustrous carbon (pirografit is a microcrystalline carbon form, which evolves from a gaseous phase. In the case of applying additions, generating lustrous carbon, for sands with bentonite, there is always a danger of emitting – due to a high temperature of liquid cast iron and a humidity - compounds hazardous for a human health. There can be: CO, SO2, benzene, toluene, ethylbenzene, xylene (the so-called: BTEX as well as polycyclic aromatic hydrocarbons(PAHs. In order to asses the selected mixtures: bentonite – carrier of lustrous carbon, in which a coal dust fraction was limited, thethermogravimetric analysis and the analysis of evolving gases were performed. Examinations were carried out in the ApplictaionsLaboratory NITZSCH-Gerätebau GmbH ,Selb/Bavaria, Germany. The NETZSCH TG 209 F1 Iris® thermal analyzer coupled to the BRUKER Optics FTIR TENSOR(TM was used to measure.

  4. Structure, High Affinity, and Negative Cooperativity of the Escherichia coli Holo-(Acyl Carrier Protein):Holo-(Acyl Carrier Protein) Synthase Complex

    Energy Technology Data Exchange (ETDEWEB)

    Marcella, Aaron M.; Culbertson, Sannie J.; Shogren-Knaak, Michael A.; Barb, Adam W.

    2017-11-01

    The Escherichia coli holo-(acyl carrier protein) synthase (ACPS) catalyzes the coenzyme A-dependent activation of apo-ACPP to generate holo-(acyl carrier protein) (holo-ACPP) in an early step of fatty acid biosynthesis. E. coli ACPS is sufficiently different from the human fatty acid synthase to justify the development of novel ACPS-targeting antibiotics. Models of E. coli ACPS in unliganded and holo-ACPP-bound forms solved by X-ray crystallography to 2.05 and 4.10 Å, respectively, revealed that ACPS bound three product holo-ACPP molecules to form a 3:3 hexamer. Solution NMR spectroscopy experiments validated the ACPS binding interface on holo-ACPP using chemical shift perturbations and by determining the relative orientation of holo-ACPP to ACPS by fitting residual dipolar couplings. The binding interface is organized to arrange contacts between positively charged ACPS residues and the holo-ACPP phosphopantetheine moiety, indicating product contains more stabilizing interactions than expected in the enzyme:substrate complex. Indeed, holo-ACPP bound the enzyme with greater affinity than the substrate, apo-ACPP, and with negative cooperativity. The first equivalent of holo-ACPP bound with a KD = 62 ± 13 nM, followed by the binding of two more equivalents of holo-ACPP with KD = 1.2 ± 0.2 μM. Cooperativity was not observed for apo-ACPP which bound with KD = 2.4 ± 0.1 μM. Strong product binding and high levels of holo-ACPP in the cell identify a potential regulatory role of ACPS in fatty acid biosynthesis.

  5. Structure, High Affinity, and Negative Cooperativity of the Escherichia coli Holo-(Acyl Carrier Protein):Holo-(Acyl Carrier Protein) Synthase Complex.

    Science.gov (United States)

    Marcella, Aaron M; Culbertson, Sannie J; Shogren-Knaak, Michael A; Barb, Adam W

    2017-11-24

    The Escherichia coli holo-(acyl carrier protein) synthase (ACPS) catalyzes the coenzyme A-dependent activation of apo-ACPP to generate holo-(acyl carrier protein) (holo-ACPP) in an early step of fatty acid biosynthesis. E. coli ACPS is sufficiently different from the human fatty acid synthase to justify the development of novel ACPS-targeting antibiotics. Models of E. coli ACPS in unliganded and holo-ACPP-bound forms solved by X-ray crystallography to 2.05and 4.10Å, respectively, revealed that ACPS bound three product holo-ACPP molecules to form a 3:3 hexamer. Solution NMR spectroscopy experiments validated the ACPS binding interface on holo-ACPP using chemical shift perturbations and by determining the relative orientation of holo-ACPP to ACPS by fitting residual dipolar couplings. The binding interface is organized to arrange contacts between positively charged ACPS residues and the holo-ACPP phosphopantetheine moiety, indicating product contains more stabilizing interactions than expected in the enzyme:substrate complex. Indeed, holo-ACPP bound the enzyme with greater affinity than the substrate, apo-ACPP, and with negative cooperativity. The first equivalent of holo-ACPP bound with a K D =62±13nM, followed by the binding of two more equivalents of holo-ACPP with K D =1.2±0.2μM. Cooperativity was not observed for apo-ACPP which bound with K D =2.4±0.1μM. Strong product binding and high levels of holo-ACPP in the cell identify a potential regulatory role of ACPS in fatty acid biosynthesis. Copyright © 2017 Elsevier Ltd. All rights reserved.

  6. Technical report of electronics shop characteristics of high speed electronics component, (1)

    International Nuclear Information System (INIS)

    Watanabe, Shin-ichi; Shiino, Kazuo.

    1975-01-01

    We must develop electronics circuits for high speed signals. The electronics components of the circuits make use of the special components. This report treats a pulse response of the electronics components (i.e. coaxial cable, connector, resistor, capacitor, diode, transistor) for high speed electronics. The results of this report was already applied constructions of high speed electronics circuits and experimental equipments of the High Energy Physics Division. (auth.)

  7. Shielding for high energy, high intensity electron accelerator installation

    International Nuclear Information System (INIS)

    Warawas, C.; Chongkum, S.

    1997-03-01

    The utilization of electron accelerators (eBA) is gradually increased in Thailand. For instance, a 30-40 MeV eBA are used for tumor and cancer therapy in the hospitals, and a high current eBA in for gemstone colonization. In the near future, an application of eBA in industries will be grown up in a few directions, e.g., flue gases treatment from the coal fire-power plants, plastic processing, rubber vulcanization and food preservation. It is the major roles of Office of Atomic Energy for Peace (OAEP) to promote the peaceful uses of nuclear energy and to regulate the public safety and protection of the environment. By taking into account of radiation safety aspect, high energy electrons are not only harmful to human bodies, but the radioactive nuclides can be occurred. This report presents a literature review by following the National Committee on Radiation Protection and Measurements (NCRP) report No.31. This reviews for parametric calculation and shielding design of the high energy (up to 100 MeV), high intensity electron accelerator installation

  8. Calcium isotopic composition of high-latitude proxy carrier Neogloboquadrina pachyderma (sin.

    Directory of Open Access Journals (Sweden)

    A. Eisenhauer

    2009-01-01

    Full Text Available The accurate reconstruction of sea surface temperature (SST history in climate-sensitive regions (e.g. tropical and polar oceans became a challenging task in palaeoceanographic research. Biogenic shell carbonate SST proxies successfully developed for tropical regions often fail in cool water environments. Their major regional shortcomings and the cryptic diversity now found within the major high latitude proxy carrier Neogloboquadrina pachyderma (sin. highlight an urgent need to explore complementary SST proxies for these cool-water regions. Here we incorporate the genetic component into a calibration study of a new SST proxy for the high latitudes. We found that the calcium isotopic composition (δ44/40Ca of calcite from genotyped net catches and core-top samples of the planktonic foraminifera Neogloboquadrina pachyderma (sin. is related to temperature and unaffected by genetic variations. The temperature sensitivity has been found to be 0.17 (±0.02‰ per 1°C, highlighting its potential for downcore applications in open marine cool-water environments. Our results further indicate that in extreme polar environments, below a critical threshold temperature of 2.0 (±0.5°C associated with salinities below 33.0 (±0.5‰, a prominent shift in biomineralization affects the δ44/40Ca of genotyped and core-top N. pachyderma (sin., becoming insensitive to temperature. These findings highlight the need of more systematic calibration studies on single planktonic foraminiferal species in order to unravel species-specific factors influencing the temperature sensitivity of Ca isotope fractionation and to validate the proxies' applicability.

  9. Electron Linacs for High Energy Physics

    International Nuclear Information System (INIS)

    Wilson, Perry B.

    2011-01-01

    The purpose of this article is to introduce some of the basic physical principles underlying the operation of electron linear accelerators (electron linacs). Electron linacs have applications ranging from linacs with an energy of a few MeV, such that the electrons are approximately relativistic, to future electron-positron linear colliders having a collision energy in the several-TeV energy range. For the most part, only the main accelerating linac is treated in this article.

  10. Mobility of charge carriers in electron-irradiated crystals of n-type Hg0.8Cd0.2Te

    International Nuclear Information System (INIS)

    Voitsekhovskii, A.V.; Kiryushkin, E.M.; Kokhanenko, A.P.; Kurbanov, K.R.; Lilenko, Yu.V.

    1988-01-01

    We present the results of an investigation of the behavior of the mobility of the charge carriers in Hg 1-x Cd x Te crystals with n-type conduction as a function of the dose of irradiation by electrons with an energy of 3.0 MeV at 300 K and the initial content of defects in the material. The complex character of the variation of the mobility of the electrons as a function of the dose observed when crystals of n-Hg 1-x Cd x Te (x ∼ 0.20) with different initial concentrations of defects are irradiated by fast electrons has been attributed to the influence of the factors of the shielding of the ionized scattering centers by electrons and the additional scattering of the charge carriers on the radiation defects. Good agreement between the experimental and calculated plots of the dependence of the mobility of electrons on the irradiation dose has been obtained with consideration of a model of the simultaneous introduction of donor (single charged) and acceptor (doubly charged) defects into a narrow-band semiconductor characterized by a degenerate and nonparabolic conduction band

  11. Formulation of stable Bacillus subtilis AH18 against temperature fluctuation with highly heat-resistant endospores and micropore inorganic carriers.

    Science.gov (United States)

    Chung, Soohee; Lim, Hyung Mi; Kim, Sang-Dal

    2007-08-01

    To survive the commercial market and to achieve the desired effect of beneficial organisms, the strains in microbial products must be cost-effectively formulated to remain dormant and hence survive through high and low temperatures of the environment during transportation and storage. Dormancy and stability of Bacillus subtilis AH18 was achieved by producing endospores with enhanced heat resistance and using inorganic carriers. Heat stability assays, at 90 degrees C for 1 h, showed that spores produced under a sublethal temperature of 57 degrees C was 100 times more heat-resistant than the ones produced by food depletion at the growing temperature of 37 degrees C. When these highly heat-resistant endospores were formulated with inorganic carriers of natural and synthetic zeolite or kaolin clay minerals having substantial amount of micropores, the dormancy of the endospores was maintained for 6 months at 15-25 degrees C. Meanwhile, macroporous perlite carriers with average pore diameter larger than 3.7 microm stimulated the germination of the spores and rapid proliferation of the bacteria. These results indicated that a B. subtilis AH18 product that can remain dormant and survive through environmental temperature fluctuation can be formulated by producing heat-stressed endospores and incorporating inorganic carriers with micropores in the formulation step.

  12. Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system.

    Science.gov (United States)

    Wang, Zhuo; Samaraweera, R L; Reichl, C; Wegscheider, W; Mani, R G

    2016-12-07

    Electron-heating induced by a tunable, supplementary dc-current (I dc ) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing I dc , yielding negative giant-magnetoresistance at the lowest temperature and highest I dc . A two-term Drude model successfully fits the data at all I dc and T. The results indicate that carrier heating modifies a conductivity correction σ 1 , which undergoes sign reversal from positive to negative with increasing I dc , and this is responsible for the observed crossover from positive- to negative- magnetoresistance, respectively, at the highest B.

  13. High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

    Science.gov (United States)

    Messenger, S. R.; Walters, R. J.; Summers, G. P.

    1993-01-01

    Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

  14. STANFORD: Highly polarized SLC electron beams

    International Nuclear Information System (INIS)

    Anon.

    1993-01-01

    Full text: Using specialized photocathodes made with 'strained' gallium arsenide, physicists at the Stanford Linear Accelerator Center (SLAC) have generated electron beams with polarizations in excess of 60 percent a year ahead of schedule. Together with recent luminosity increases, this breakthrough will have a major impact on the physics output of the Stanford Linear Collider (SLC). Beam polarization was almost tripled using photocathodes in which a gallium arsenide layer was grown epitaxially over a substrate of gallium arsenide phosphide. The mismatch between these two layers deforms the crystal structure and removes a degeneracy in the valence band structure, permitting selective optical pumping of one unique spin state. Whereas conventional gallium arsenide photocathodes are limited to 50 percent polarization because of this degeneracy (and realistic cathodes fall substantially below this theoretical limit), such strained crystal lattices have the potential to yield polarizations close to 100 percent. Polarization enhancement with strained lattices was first demonstrated in 1991 by a SLAC/Wisconsin/ Berkeley group (May 1991, page 6) with a 71 percent polarization in a laboratory experiment. More recently this group has achieved polarization in excess of 90 percent, reported last November at the Nagoya Spin Symposium. (In a complementary development, a Japanese KEK/ Nagoya/KEK obtains polarized beams using a 'superlattice' - May 1991, page 4.) The 1993 SLC run, the strained gallium arsenide photocathode technique's debut in an operating particle accelerator, has proved to be a resounding, unqualified success - as have physics experiments on the Z particles produced by the highly polarized beam. A conservative approach was called for, due to concerns about possible charge saturation effects. A relatively thick (0.3 micron) gallium arsenide layer was used for the photocathode in the SLC polarized electron source. With a titanium

  15. High fructose intake fails to induce symptomatic adaptation but may induce intestinal carriers

    Directory of Open Access Journals (Sweden)

    Debra Heilpern

    2010-01-01

    Full Text Available Fructose has several interactions in man, including intolerance and promotion of some diseases. However, fructose in fruits and in prebiotics may be associated with benefits. Adaptation to regular fructose ingestion as defined for lactose could support a beneficial rather than a deleterious effect. This study was undertaken to evaluate symptomatic response and potential underlying mechanisms of fecal bacterial change and breath hydrogen response to short term regular fructose supplementation. Forty-five participants were recruited for a 3 day recall diet questionnaire and a 50 g fructose challenge. Breath hydrogen was measured for 4.5 hrs and symptoms were recorded. Thirty-eight subjects provided stool samples for analysis by selective culture of 4 groups of bacteria, including bifidobacteria and lactobacilli. Intolerant subjects returned a second time 15 days later. Ten of these served as controls and 16 received 30 g fructose twice a day. Ten of the latter returned 27 days later, after stopping fructose for a third challenge test. Student’s paired, unpaired t-tests and Pearson correlations were used. Significance was accepted at P<0.05. After fructose rechallenge there were no significant reductions in symptoms scores in volunteers in either the fructose supplemented or non supplemented groups. However, total breath hydrogen was reduced between test 1 and test 2 (P=0.03 or test 3 (P=0.04 in the group given fructose then discontinued, compared with controls. There were no statistically significant changes in bacterial numbers between test 2 and 1. This study shows that regular consumption of high dose fructose does not follow the lactose model of adaptation. Observed changes in hydrogen breath tests raise the possibility that intestinal carriers of fructose may be induced potentially aggravating medical problems attributed to fructose.

  16. Microsphere preparation using highly branched dextran degraded by electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Min Ho; Yoo, Sun Kyun [Joongbu Univ., Geumsan (Korea, Republic of); Kang, Hyun Suk; Lee, Byung Cheol [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2011-07-01

    Dextrans as noble alternative consist predominantly of linear a-1,6 glucose linkages with some degree of branching via 1,2-, 1,3-, or 1,4- linkage. Dextrans have been investigated as potential macromolecular carriers for delivery of drugs and proteins, primarily to increase the longevity of therapeutic agents in the delivery of drugs and proteins, primarily to increase the longevity of therapeutic agents in the circulation. In most previous researches, linear type of dextrans with molecular weight of new type of drug delivery agent. Since 1950, the clinical dextran has been manufactured by acid hydrolysis, of which processes are multi-steps and time-consumed. Therefore, the objective of this research is evaluate the microsphere synthesised by highly branched dextran degraded by a electron beam radiation. Linear type of dextran was purchased from Sigma company. Branch type of dextran was produced and purified in our lab. The branch degree of dextran was evaluated using dextranase and analyzed by TLC. The air-dry dextran and two solution dextran was irradiated at room temperature using a electrostatic beam. The electron beam energy applied was 1.0 to 2.5 MeV. Dose was 70 kGy. The molecular average weight if 11,215,000 of linear dextran and 7,413,000 was degraded to 213,000 and 112,000, respectively. Branched dextran applied by a beam still retained its branched structure. The size of microsphere was dependant of the amount of PPG added to make water to water emulsion. Swelling of microsphere of branched dextran was higher than of linear dextran.

  17. Microsphere preparation using highly branched dextran degraded by electron beam

    International Nuclear Information System (INIS)

    Oh, Min Ho; Yoo, Sun Kyun; Kang, Hyun Suk; Lee, Byung Cheol

    2011-01-01

    Dextrans as noble alternative consist predominantly of linear a-1,6 glucose linkages with some degree of branching via 1,2-, 1,3-, or 1,4- linkage. Dextrans have been investigated as potential macromolecular carriers for delivery of drugs and proteins, primarily to increase the longevity of therapeutic agents in the delivery of drugs and proteins, primarily to increase the longevity of therapeutic agents in the circulation. In most previous researches, linear type of dextrans with molecular weight of new type of drug delivery agent. Since 1950, the clinical dextran has been manufactured by acid hydrolysis, of which processes are multi-steps and time-consumed. Therefore, the objective of this research is evaluate the microsphere synthesised by highly branched dextran degraded by a electron beam radiation. Linear type of dextran was purchased from Sigma company. Branch type of dextran was produced and purified in our lab. The branch degree of dextran was evaluated using dextranase and analyzed by TLC. The air-dry dextran and two solution dextran was irradiated at room temperature using a electrostatic beam. The electron beam energy applied was 1.0 to 2.5 MeV. Dose was 70 kGy. The molecular average weight if 11,215,000 of linear dextran and 7,413,000 was degraded to 213,000 and 112,000, respectively. Branched dextran applied by a beam still retained its branched structure. The size of microsphere was dependant of the amount of PPG added to make water to water emulsion. Swelling of microsphere of branched dextran was higher than of linear dextran

  18. Sanitation methods using high energy electron beams

    International Nuclear Information System (INIS)

    Levaillant, C.; Gallien, C.L.

    1979-01-01

    Short recycling of waste water and the use of liquid or dehydrated sludge as natural manure for agriculture or animal supplement feed is of great economical and ecological interest. It implies strong biological and chemical disinfection. Ionizing radiations produced by radioactive elements or linear accelerators can be used as a complement of conventional methods in the treatment of liquid and solid waste. An experiment conducted with high-energy electron-beam linear accelerators is presented. Degradation of undesirable metabolites in water occurs for a dose of 50 kRad. Undesirable seeds present in sludge are destroyed with a 200 kRad dose. A 300 kRad dose is sufficient for parasitic and bacterial disinfection (DL 90). Destruction of polio virus (DL 90) is obtained for 400 kRad. Higher doses (1000 to 2000 kRad) produce mineralization of toxic organic mercury, reduce some chemical toxic pollutants present in sludge and improve flocculation. (author)

  19. Very-High-Brightness Picosecond Electron Source

    International Nuclear Information System (INIS)

    Bluem, H.

    2003-01-01

    Bright, RF photocathode electron guns are the source of choice for most high-performance research accelerator applications. Some of these applications are pushing the performance boundaries of the present state-of-the-art guns. Advanced Energy Systems is developing a novel photocathode RF gun that shows excellent promise for extending gun performance. Initial gun simulations with only a short booster accelerator easily break the benchmark emittance of one micron for 1 nC of bunch charge. The pulse length in these simulations is less than 2 ps. It is expected that with more detailed optimization studies, the performance can be further improved. The performance details of the gun will be presented. In addition, we will discuss the present design concept along with the status of the project

  20. Improved methods for high resolution electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, J.R.

    1987-04-01

    Existing methods of making support films for high resolution transmission electron microscopy are investigated and novel methods are developed. Existing methods of fabricating fenestrated, metal reinforced specimen supports (microgrids) are evaluated for their potential to reduce beam induced movement of monolamellar crystals of C/sub 44/H/sub 90/ paraffin supported on thin carbon films. Improved methods of producing hydrophobic carbon films by vacuum evaporation, and improved methods of depositing well ordered monolamellar paraffin crystals on carbon films are developed. A novel technique for vacuum evaporation of metals is described which is used to reinforce microgrids. A technique is also developed to bond thin carbon films to microgrids with a polymer bonding agent. Unique biochemical methods are described to accomplish site specific covalent modification of membrane proteins. Protocols are given which covalently convert the carboxy terminus of papain cleaved bacteriorhodopsin to a free thiol. 53 refs., 19 figs., 1 tab.

  1. Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges

    International Nuclear Information System (INIS)

    Moriyama, N; Ohno, Y; Kitamura, T; Kishimoto, S; Mizutani, T

    2010-01-01

    We study the phenomenon of change in carrier type in carbon nanotube field-effect transistors (CNFETs) caused by the atomic layer deposition (ALD) of a HfO 2 gate insulator. When a HfO 2 layer is deposited on a CNFET, the type of carrier changes from p-type to n-type. The so-obtained n-type device has good performance and stability in air. The conductivity of such a device with a channel length of 0.7 μm is 11% of the quantum conductance 4e 2 /h. The contact resistance for electron current is estimated to be 14 kΩ. The n-type conduction of this CNFET is maintained for more than 100 days. The change in carrier type is attributed to positive fixed charges introduced at the interface between the HfO 2 and SiO 2 layers. We also propose a novel technique to control the type of conduction by utilizing interface fixed charges; this technique is compatible with Si CMOS process technology.

  2. High frequency free-electron laser results

    International Nuclear Information System (INIS)

    Boyer, K.; Brau, C.A.; Newman, B.E.; Stein, W.E.; Warren, R.W.; Winston, J.G.; Young, L.M.

    1983-01-01

    By looking at the free-electron laser as a particle accelerator working backwards, Morton realized that the techniques used to accelerate particles could be used to improve the performance of free-electron lasers. In particular, he predicted the capture of electrons in ''stable-phase'' regions, or ''buckets'' in the electron phase space, and proposed that by decelerating the buckets, the trapped electrons could be decelerated to extract significant amounts of their energy as optical radiation. In fact, since electrons not trapped in the stable regions are forever excluded from them--at least in the adiabatic approximation--displacement techniques could also be used to accelerate or decelerate electrons in a free-electron laser. This paper explains the principle behind ''phase-displacement'' acceleration and details an experiment carried out with a 20-MeV electron beam to test these predictions. Results obtained with a tapered-wiggler free-electron laser demonstrate the concepts proposed by Morton for enhanced efficiency. They show deceleration of electrons by as much as 7% and extraction of more than 3% of the total electron-beam energy as laser energy when the laser is operated as an amplifier. The experiment is presently being reconfigured to examine its performance as a laser oscillator

  3. Improved Electron Yield and Spin-Polarization from III-V Photocathodes Via Bias Enhanced Carrier Drift

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.; Bierman, John; Brachmann, Axel; Clendenin, James E.; Garwin, Edward; Kirby, Robert; Luh, Dah-An

    2005-01-01

    Spin-polarized electrons are commonly used in high energy physics. Future work will benefit from greater polarization. Polarizations approaching 90% have been achieved at the expense of yield. The primary paths to higher polarization are material design and electron transport. Our work addresses the latter. Photoexcited electrons may be preferentially emitted or suppressed by an electric field applied across the active region. We are tuning this forward bias for maximum polarization and yield, together with other parameters, e.g., doping profile. Preliminary measurements have been carried out on bulk and thin film GaAs. As expected, the yield change far from the bandgap is quite large for bulk material. The bias is applied to the bottom (non-activated) side of the cathode so that the accelerating potential as measured with respect to the ground potential chamber walls is unchanged for different front-to-back cathode bias values. The size of the bias to cause an appreciable effect is rather small reflecting the low drift kinetic energy in the zero bias case

  4. Filtered Carrier Phase Estimator for High-Order QAM Optical Systems

    DEFF Research Database (Denmark)

    Rozental, Valery; Kong, Deming; Corcoran, Bill

    2018-01-01

    We investigate, using Monte Carlo simulations, the performance characteristics and limits of a low-complexity filtered carrier phase estimator (F-CPE) in terms of cycle slip occurrences and SNR penalties. In this work, the F-CPE algorithm has been extended to include modulation formats whose oute...

  5. Electronic structure of ion arsenic high temperature superconductors studied by angle resolved photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chang [Iowa State Univ., Ames, IA (United States)

    2011-01-01

    The main purpose of the present thesis is to present our ARPES results on the iron arsenic superconductors. As revealed by a series of ARPES measurements on both the AEFe2As2 and the RFeAs(O,F) families (parent compound and carrier-doped systems), the electronic structures of the pnictides are complicated, three dimensional, and closely linked to their superconducting behavior (13; 14; 15; 16; 17; 18; 19). Parent compounds of these materials exhibit the basic hole-electron pocket dual plus an apparent Fermi surface reconstruction caused by long range antiferromagnetism (13; 15). When carriers are introduced, the chemical potential shifts in accordance with the Luttinger theorem and the rigid band shifting picture (13). Importantly, both the appearance and disappearance of the superconducting dome at low and high doping levels have intimate relation with topological changes at the Fermi surfaces, resulting in a specific Fermi topology being favored by superconductivity (15; 16). On the low doping side, superconductivity emerges in the phase diagram once the antiferromagnetic reconstruction disappears below the Fermi level, returning the Fermi surface to its paramagnetic-like appearance. On the high doping side, superconductivity disappears around a doping level at which the central hole pocket vanishes due to increasing electron concentration. Such phenomena are evidence for the governing role the electronic structure plays in their superconducting behavior.

  6. Zeolites - a high resolution electron microscopy study

    International Nuclear Information System (INIS)

    Alfredsson, V.

    1994-10-01

    High resolution transmission electron microscopy (HRTEM) has been used to investigate a number of zeolites (EMT, FAU, LTL, MFI and MOR) and a member of the mesoporous M41S family. The electron optical artefact, manifested as a dark spot in the projected centre of the large zeolite channels, caused by insufficient transfer of certain reflections in the objective lens has been explained. The artefact severely hinders observation of materials confined in the zeolite channels and cavities. It is shown how to circumvent the artefact problem and how to image confined materials in spite of disturbance caused by the artefact. Image processing by means of a Wiener filter has been applied for removal of the artefact. The detailed surface structure of FAU has been investigated. Comparison of experimental micrographs with images simulated using different surface models indicates that the surface can be terminated in different ways depending on synthesis methods. The dealuminated form of FAU (USY) is covered by an amorphous region. Platinum incorporated in FAU has a preponderance to aggregate in the (111) twin planes, probably due to a local difference in cage structure with more spacious cages. It is shown that platinum is intra-zeolitic as opposed to being located on the external surface of the zeolite crystal. This could be deduced from tomography of ultra-thin sections among observations. HRTEM studies of the mesoporous MCM-41 show that the pores have a hexagonal shape and also supports the mechanistic model proposed which involves a cooperative formation of a mesophase including the silicate species as well as the surfactant. 66 refs, 24 figs

  7. Theoretical description of high-lying two-electrons states

    International Nuclear Information System (INIS)

    Greene, C.H.; Cavagnero, M.; Sadeghpour, H.R.

    1993-01-01

    Within the past two years, experiments on high-lying doubly-excited states in He and H- have shown spectra at energies near excited hydrogenic thresholds having principal quantum numbers in the range N=5--9. While they display some nontrivial complexities, the spectra are tremendously simpler than might be anticipated on the basis of independent electron models, in that only a small fraction of the total number of anticipated resonances are observed experimentally. Moreover, for principal quantum number N that are not too high, specifically N - , the resonance positions are described accurately by adiabatic calculations using hyperspherical coordinates and can be parametrized by a remarkably simple two-electron Rydberg formula. The observed propensity for excitation of only a small subset of the possible resonance states has been codified by several groups into approximate selection rules based on alternative (but apparently equivalent) classification schemes. Comparatively few attempts have been made at quantitative tests of the validity of these rules. The present review describes recent efforts to quantify their accuracy and limitations using R-matrix and quantum defect techniques, and Smith's delay-time matrix. Prospensity rules for exciting different degrees of freedom are found to differ greatly in their degree of validity

  8. Electron-electron interactions in graphene field-induced quantum dots in a high magnetic field

    DEFF Research Database (Denmark)

    Orlof, A.; Shylau, Artsem; Zozoulenko, I. V.

    2015-01-01

    We study the effect of electron-electron interaction in graphene quantum dots defined by an external electrostatic potential and a high magnetic field. To account for the electron-electron interaction, we use the Thomas-Fermi approximation and find that electron screening causes the formation...... of compressible strips in the potential profile and the electron density. We numerically solve the Dirac equations describing the electron dynamics in quantum dots, and we demonstrate that compressible strips lead to the appearance of plateaus in the electron energies as a function of the magnetic field. Finally...

  9. ELEC-2005: Electronics in High Energy Physics

    CERN Multimedia

    Monique Duval

    2004-01-01

    ELEC-2005 is a new course series on modern electronics, given by CERN physicists and engineers in the format of the successful ELEC-2002 course series, and within the framework of the 2005 Technical Training Programme. This comprehensive course series is designed for people who are not electronics specialists, for example physicists, engineers and technicians working at or visiting the laboratory, who use or will use electronics in their present or future activities, in particular in the context of the LHC accelerator and experiments. ELEC-2005 will composed of four Terms throughout the year: Winter Term: Introduction to electronics in HEP (January-February, 6 lectures) Spring Term: Integrated circuits and VLSI technology for physics (March, 6 lectures) Summer Term: System electronics for physics: Issues (May, 7 lectures) Winter Term: Electronics applications in HEP experiments (November-December, 10 lectures) Lectures within each Term will take place on Tuesdays and Thursdays, from 10:00 to 12:30. The...

  10. Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

    Directory of Open Access Journals (Sweden)

    Takeshi Inaoka

    2012-12-01

    Full Text Available Adsorption on an n-type InAs surface often induces a gradual formation of a carrier-accumulation layer at the surface. By means of high-resolution photoelectron spectroscopy (PES, Betti et al. made a systematic observation of subbands in the accumulation layer in the formation process. Incorporating a highly nonparabolic (NP dispersion of the conduction band into the local-density-functional (LDF formalism, we examine the subband structure in the accumulation-layer formation process. Combining the LDF calculation with the PES experiment, we make an accurate evaluation of the accumulated-carrier density, the subband-edge energies, and the subband energy dispersion at each formation stage. Our theoretical calculation can reproduce the three observed subbands quantitatively. The subband dispersion, which deviates downward from that of the projected bulk conduction band with an increase in wave number, becomes significantly weaker in the formation process. Accurate evaluation of the NP subband dispersion at each formation stage is indispensable in making a quantitative analysis of collective electronic excitations and transport properties in the subbands.

  11. Effect mutual carrying away of electrons and photons on thermomagnet and thermoelectric phenomena in semiconductors with generated statistics of current carriers

    International Nuclear Information System (INIS)

    Kuliev, I.G.

    2000-01-01

    One studied the effects of the mutual carrying away of electrons and phonons on the thermomagnetic and thermoelectric phenomena in semiconductors with the degenerated statistics of current carriers. One estimated the conduction current within nonequilibrium electron-phonon system in the linear approximation on the basis of the degeneration parameter. Under the isothermal conductors the mutual carrying away was shown to affect essentially the values of the Nernst-Ettingshausen effects. One estimated the heat flow and analyzed the dependence of heat conductivity and of the Muggy-Regge (MR) effect on the magnetic field. The contribution of the mutual carrying away into the isothermal MR-effect was determined to be proportional to the degeneration parameter. One studied thermomagnetic and thermoelectric effects in the degenerated conductors with regard to the mutual carrying away of electrons and phonons both under the isothermal and under the adiabatic conditions [ru

  12. Analysis of radiation damage to Si solar cells under high-fluence electron irradiation

    International Nuclear Information System (INIS)

    Yamaguchi, Masafumi; Taylor, S.J.; Yang, Ming-Ju; Matsuda, Sumio; Kawasaki, Osamu; Hisamatsu, Tadashi.

    1996-01-01

    Radiation testing of Si n + -p-p + space solar cells has revealed an anomalous increase in short-circuit current I sc , followed by an abrupt decrease and cell failure, induced by high-fluence (>10 16 cm -2 ) electron irradiation. A model which can be used to explain these phenomena by expressing the change in majority-carrier concentration p of the base region as a function of the electron fluence has been proposed in addition to the well-known model in which I sc is decreased due to minority-carrier lifetime reduction with irradiation. The reduction in p due to majority-carrier trapping by radiation-induced defects has two effects; one is broadening of the depletion layer which contributes to the increase in the generated photocurrent and that in the recombination-generation current in the depletion layer, and the second is an increase in the resistivity of the base layer resulting in an abrupt decrease of I sc and failure of the solar cells. (author)

  13. A summary of high-temperature electronics research and development

    International Nuclear Information System (INIS)

    Thome, F.V.; King, D.B.

    1991-01-01

    Current and future needs in automative, aircraft, space, military, and well logging industries require operation of electronics at higher temperatures than today's accepted limit of 395 K. Without the availability of high-temperature electronics, many systems must operate under derated conditions or must accept severe mass penalties required by coolant systems to maintain electronic temperatures below critical levels. This paper presents ongoing research and development in the electronics community to bring high-temperature electronics to commercial realization. Much of this work was recently reviewed at the First International High-Temperature Electronics Conference held 16--20 June 1991 in Albuquerque, New Mexico. 4 refs., 1 tab

  14. Electronic phase separation and high temperature superconductors

    International Nuclear Information System (INIS)

    Kivelson, S.A.

    1994-01-01

    The authors review the extensive evidence from model calculations that neutral holes in an antiferromagnet separate into hole-rich and hole-poor phases. All known solvable limits of models of holes in a Heisenberg antiferromagnet exhibit this behavior. The authors show that when the phase separation is frustrated by the introduction of long-range Coulomb interactions, the typical consequence is either a modulated (charge density wave) state or a superconducting phase. The authors then review some of the strong experimental evidence supporting an electronically-driven phase separation of the holes in the cuprate superconductors and the related Ni oxides. Finally, the authors argue that frustrated phase separation in these materials can account for many of the anomalous normal state properties of the high temperature superconductors and provide the mechanism of superconductivity. In particular, it is shown that the T-linear resistivity of the normal state is a paraconductivity associated with a novel composite pairing, although the ordered superconducting state is more conventional

  15. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Directory of Open Access Journals (Sweden)

    Murali Gedda

    2013-11-01

    Full Text Available Polyvinyl alcohol (PVA and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc wire base field-effect transistors (OFETs. CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  16. The indicating FTA elute cartridge a solid sample carrier to detect high-risk HPV and high-grade cervical lesions

    NARCIS (Netherlands)

    Bie, R.P. de; Schmeink, C.E.; Bakkers, J.M.J.E.; Snijders, P.J.L.M.; Quint, W.G.V.; Massuger, L.F.A.G.; Bekkers, R.L.M.; Melchers, W.J.G.

    2011-01-01

    The clinically validated high-risk human papillomavirus (hrHPV) Hybrid Capture 2 (HC2) and GP5+/6+-PCR assays were analyzed on an Indicating FTA Elute cartridge (FTA cartridge). The FTA cartridge is a solid dry carrier that allows safe transport of cervical samples. FTA cartridge samples were

  17. Single Carrier Cyclic Prefix-Assisted CDMA System with Frequency Domain Equalization for High Data Rate Transmission

    Directory of Open Access Journals (Sweden)

    Madhukumar A. S.

    2004-01-01

    Full Text Available Multiple-access interference and interfinger interference limit the capacity of conventional single-carrier DS-CDMA systems. Even though multicarrier CDMA posses the advantages of conventional CDMA and OFDM, it suffers from two major implementation difficulties such as peak-to-average power ratio and high sensitivity to frequency offset and RF phase noise. A novel approach based on single-carrier cyclic prefix-assisted CDMA has been proposed to overcome the disadvantages of single-carrier CDMA and multicarrier modulation. The usefulness of the proposed approach for high-speed packet access with simplified channel estimation procedures are investigated in this paper. The paper also proposes a data-dependent pilot structure for the downlink transmission of the proposed system for enhancing pilot-assisted channel estimation in frequency domain. The performance of the proposed pilot structure is compared against the data-independent common pilot structure. The proposed system is extensively simulated for different channel parameters with different channel estimation and equalization methods and the results are compared against conventional multicarrier CDMA systems with identical system specifications.

  18. Electron clouds in high energy hadron accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Petrov, Fedor

    2013-08-29

    The formation of electron clouds in accelerators operating with positrons and positively charge ions is a well-known problem. Depending on the parameters of the beam the electron cloud manifests itself differently. In this thesis the electron cloud phenomenon is studied for the CERN Super Proton Synchrotron (SPS) and Large Hadron Collider (LHC) conditions, and for the heavy-ion synchrotron SIS-100 as a part of the FAIR complex in Darmstadt, Germany. Under the FAIR conditions the extensive use of slow extraction will be made. After the acceleration the beam will be debunched and continuously extracted to the experimental area. During this process, residual gas electrons can accumulate in the electric field of the beam. If this accumulation is not prevented, then at some point the beam can become unstable. Under the SPS and LHC conditions the beam is always bunched. The accumulation of electron cloud happens due to secondary electron emission. At the time when this thesis was being written the electron cloud was known to limit the maximum intensity of the two machines. During the operation with 25 ns bunch spacing, the electron cloud was causing significant beam quality deterioration. At moderate intensities below the instability threshold the electron cloud was responsible for the bunch energy loss. In the framework of this thesis it was found that the instability thresholds of the coasting beams with similar space charge tune shifts, emittances and energies are identical. First of their kind simulations of the effect of Coulomb collisions on electron cloud density in coasting beams were performed. It was found that for any hadron coasting beam one can choose vacuum conditions that will limit the accumulation of the electron cloud below the instability threshold. We call such conditions the ''good'' vacuum regime. In application to SIS-100 the design pressure 10{sup -12} mbar corresponds to the good vacuum regime. The transition to the bad vacuum

  19. Efficient charge carriers induced by extra outer-shell electrons in iron-pnictides: a comparison between Ni- and Co-doped CaFeAsF

    International Nuclear Information System (INIS)

    Zhang Min; Yu Yi; Tan Shun; Zhang Yuheng; Zhang Changjin; Zhang Lei; Qu Zhe; Ling Langsheng; Xi, Chuanying

    2010-01-01

    A comprehensive study of the difference between CaFe 1-x Ni x AsF and CaFe 1-x Co x AsF systems has been carried out by measuring the efficient charge carrier concentration, the valence states and the superconducting phase diagram. It is found that at the same doping level, Ni doping introduces nearly twice the number of charge carriers as Co doping. However, x-ray absorption near-edge spectroscopy measurements reveal that the valence state of Fe in both systems is close to 2, indicating that there is no valence mismatch. We suggest that the charge carriers in CaFe 1-x M x AsF (M=transition metal elements) are not induced by valence mismatch but come from the difference in the number of outer-shell electrons. We also suggest that with Ni and Co doping, the systems change from a multi-band material in the underdoped regions to a single-band state in the overdoped regions.

  20. High performance flexible electronics for biomedical devices.

    Science.gov (United States)

    Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

    2014-01-01

    Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.

  1. Charge carrier transport in Cu(In,Ga)Se2 thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    International Nuclear Information System (INIS)

    Nichterwitz, Melanie

    2012-01-01

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se 2 (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe 2 absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p + layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p + layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface. The p + layer leads

  2. Electronic behavior of highly correlated metals

    International Nuclear Information System (INIS)

    Reich, A.

    1988-10-01

    This thesis addresses the question of the strongly interacting many-body problem: that is, systems where the interparticle correlations are so strong as to defy perturbative approaches. These subtle correlations occur in narrow band materials, such as the lanthanides and actinides, wherein the f-electrons are so localized that a variety of new phenomena, including intermediate-valence and heavy-fermionic behavior, may occur. As well, one has the alloying problem, where local interactions are paramount in determining the overall behavior. The technique employed in dealing with these systems is the Small Cluster method, wherein the full many-body Hamiltonian for a small grouping of atoms, coupled with periodic boundary conditions, is solved exactly. This is tantamount to solving a bulk crystal at the high points of symmetry in the Brillouin Zone. The mathematical overhead is further reduced by employing the full space group and spin symmetries. By its very nature, the Small Cluster method is well able to handle short-range interactions, as well as the combinatorial complexity of the many-body problem, on an equal footing. The nature of long-range order and phase transition behavior cannot be incorporated, but sometimes clues as to their origin can be discerned. The calculations presented include: a two-band Anderson model for an intermediate-valence system, wherein photoemission and fluctuation behavior is examined; a single-band Hubbard model for a ternary alloy system, such as copper-silver-gold; and a Hubbard model for a heavy- fermion system, wherein Fermi surface, transport, magnetic and superconducting properties are discussed. 148 refs., 31 figs., 24 tabs

  3. Application of high power microwave vacuum electron devices

    International Nuclear Information System (INIS)

    Ding Yaogen; Liu Pukun; Zhang Zhaochuan; Wang Yong; Shen Bin

    2011-01-01

    High power microwave vacuum electron devices can work at high frequency, high peak and average power. They have been widely used in military and civil microwave electron systems, such as radar, communication,countermeasure, TV broadcast, particle accelerators, plasma heating devices of fusion, microwave sensing and microwave heating. In scientific research, high power microwave vacuum electron devices are used mainly on high energy particle accelerator and fusion research. The devices include high peak power klystron, CW and long pulse high power klystron, multi-beam klystron,and high power gyrotron. In national economy, high power microwave vacuum electron devices are used mainly on weather and navigation radar, medical and radiation accelerator, TV broadcast and communication system. The devices include high power pulse and CW klystron, extended interaction klystron, traveling wave tube (TWT), magnetron and induced output tube (IOT). The state of art, common technology problems and trends of high power microwave vacuum electron devices are introduced in this paper. (authors)

  4. High-resolution charge carrier mobility mapping of heterogeneous organic semiconductors

    Science.gov (United States)

    Button, Steven W.; Mativetsky, Jeffrey M.

    2017-08-01

    Organic electronic device performance is contingent on charge transport across a heterogeneous landscape of structural features. Methods are therefore needed to unravel the effects of local structure on overall electrical performance. Using conductive atomic force microscopy, we construct high-resolution out-of-plane hole mobility maps from arrays of 5000 to 16 000 current-voltage curves. To demonstrate the efficacy of this non-invasive approach for quantifying and mapping local differences in electrical performance due to structural heterogeneities, we investigate two thin film test systems, one bearing a heterogeneous crystal structure [solvent vapor annealed 5,11-Bis(triethylsilylethynyl)anthradithiophene (TES-ADT)—a small molecule organic semiconductor] and one bearing a heterogeneous chemical composition [p-DTS(FBTTh2)2:PC71BM—a high-performance organic photovoltaic active layer]. TES-ADT shows nearly an order of magnitude difference in hole mobility between semicrystalline and crystalline areas, along with a distinct boundary between the two regions, while p-DTS(FBTTh2)2:PC71BM exhibits subtle local variations in hole mobility and a nanoscale domain structure with features below 10 nm in size. We also demonstrate mapping of the built-in potential, which plays a significant role in organic light emitting diode and organic solar cell operation.

  5. Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

    Science.gov (United States)

    Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

    2015-09-28

    The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

  6. Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

    International Nuclear Information System (INIS)

    Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

    2007-01-01

    Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (n s ) and electron mobility (μ n ) in the HfO 2 -passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher I Dmax and an 18% higher g mmax in HEMTs with HfO 2 passivation relative to the unpassivated devices. On the other hand, I gleak of the HEMTs decreases by nearly one order of magnitude when HfO 2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO 2 -passivated HEMTs exhibit a much smaller off-state I D , indicating better turn-off characteristics

  7. Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites.

    Science.gov (United States)

    Stoddard, Ryan J; Eickemeyer, Felix T; Katahara, John K; Hillhouse, Hugh W

    2017-07-20

    High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83 Cs 0.17 Pb(I 0.66 Br 0.34 ) 3 , resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.

  8. Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

    Science.gov (United States)

    Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

    2018-04-01

    In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

  9. HIGH-CURRENT ERL-BASED ELECTRON COOLING FOR RHIC

    International Nuclear Information System (INIS)

    BEN-ZVI, I.

    2005-01-01

    The design of an electron cooler must take into account both electron beam dynamics issues as well as the electron cooling physics. Research towards high-energy electron cooling of RHIC is in its 3rd year at Brookhaven National Laboratory. The luminosity upgrade of RHIC calls for electron cooling of various stored ion beams, such as 100 GeV/A gold ions at collision energies. The necessary electron energy of 54 MeV is clearly out of reach for DC accelerator system of any kind. The high energy also necessitates a bunched beam, with a high electron bunch charge, low emittance and small energy spread. The Collider-Accelerator Department adopted the Energy Recovery Linac (ERL) for generating the high-current, high-energy and high-quality electron beam. The RHIC electron cooler ERL will use four Superconducting RF (SRF) 5-cell cavities, designed to operate at ampere-class average currents with high bunch charges. The electron source will be a superconducting, 705.75 MHz laser-photocathode RF gun, followed up by a superconducting Energy Recovery Linac (ERL). An R and D ERL is under construction to demonstrate the ERL at the unprecedented average current of 0.5 amperes. Beam dynamics performance and luminosity enhancement are described for the case of magnetized and non-magnetized electron cooling of RHIC

  10. Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

    Science.gov (United States)

    Lee, Jonathan; Flitsiyan, Elena; Chernyak, Leonid; Yang, Jiancheng; Ren, Fan; Pearton, Stephen J.; Meyler, Boris; Salzman, Y. Joseph

    2018-02-01

    The influence of 1.5 MeV electron irradiation on minority transport properties of Si doped β-Ga2O3 vertical Schottky rectifiers was observed for fluences up to 1.43 × 1016 cm-2. The Electron Beam-Induced Current technique was used to determine the minority hole diffusion length as a function of temperature for each irradiation dose. This revealed activation energies related to shallow donors at 40.9 meV and radiation-induced defects with energies at 18.1 and 13.6 meV. Time-resolved cathodoluminescence measurements showed an ultrafast 210 ps decay lifetime and reduction in carrier lifetime with increased irradiation.

  11. Association of 239Pu with lysosomes in rat, Syrian hamster, and Chinese hamster liver as studied by carrier-free electrophoresis and electron microscopic autoradiography with 241Pu

    International Nuclear Information System (INIS)

    Seidel, A.; Krueger, E.W.; Wiener, M.; Hotz, G.; Balani, M.; Thies, W.G.

    1985-01-01

    The binding of injected monomeric plutonium in the liver of rats, Syrian hamsters, and Chinese hamsters (species which show profound differences in their ability to eliminate 239 Pu from the liver) was investigated by carrier-free electrophoresis using 239 Pu and electron microscopic autoradiography with 241 Pu. These studies are part of a program designed to obtain a better understanding of the mechanisms of the clearance of transuranium elements from liver of different mammals and man. Between 4 and 9 days after nuclide injection, a clear correlation between the majority of the 239 Pu and lysosomal enzymes was observed when the mitochondrial-lysosomal (ML) fraction of the livers was analyzed by carrier-free electrophoresis. In the two hamster species, a second 239 Pu peak exists from the beginning and increases with time to comprise 50% of the total radioactivity at later times. During electron microscopic examination 4 days after 241 Pu injection, beta tracks were frequently observed over globular structures resembling dense bodies in Chinese hamster liver. They were also observed frequently over chromatin-rich portions of the cell nuclei. These results, together with those from previous density gradient studies, show that lysosomes are the primary deposition site for 239 Pu in the liver cytoplasm of these three rodent species. The hypothesis of a morphologic transformation of these lysosomes with time in hamster liver and of rapid bulk exocytosis of the lysosomes in rats are still possible explanations for the extreme differences in the elimination among the three species

  12. High gain free electron laser at ETA

    International Nuclear Information System (INIS)

    Orzechowski, T.J.; Prosnitz, D.; Halbach, K.

    1983-01-01

    A single pass, tapered electron wiggler and associated beam transport has been constructed at the Experimental Test Accelerator (ETA) at Lawrence Livermore National Laboratory (LLNL). The system is designed to transport 1 kA of 4.5 MeV electrons with an emittance of 30 millirad-cm. The planar wiggler is provided by a pulsed electromagnet. The interaction region is an oversized rectangular waveguide. Quadrupole fields stabilize the beam in the plane parallel to the wiggler field. The 3 meter long wiggler has a 9.8 cm period. The Free Electron Laser (FEL) will serve as an amplifier for input frequencies of 35 GHz and 140 GHz. The facility is designed to produce better than 500 Megawatts peak power

  13. Electron ray tracing with high accuracy

    International Nuclear Information System (INIS)

    Saito, K.; Okubo, T.; Takamoto, K.; Uno, Y.; Kondo, M.

    1986-01-01

    An electron ray tracing program is developed to investigate the overall geometrical and chromatic aberrations in electron optical systems. The program also computes aberrations due to manufacturing errors in lenses and deflectors. Computation accuracy is improved by (1) calculating electrostatic and magnetic scalar potentials using the finite element method with third-order isoparametric elements, and (2) solving the modified ray equation which the aberrations satisfy. Computation accuracy of 4 nm is achieved for calculating optical properties of the system with an electrostatic lens

  14. High quality flux control system for electron gun evaporation

    International Nuclear Information System (INIS)

    Appelbloom, A.M.; Hadley, P.; van der Marel, D.; Mooij, J.E.

    1991-01-01

    This paper reports on a high quality flux control system for electron gun evaporation developed and tested for the MBE growth of high temperature superconductors. The system can be applied to any electron gun without altering the electron gun itself. Essential elements of the system are a high bandwidth mass spectrometer, control electronics and a high voltage modulator to sweep the electron beam over the melt at high frequencies. the sweep amplitude of the electron beam is used to control the evaporation flux at high frequencies. The feedback loop of the system has a bandwidth of over 100 Hz, which makes it possible to grow superlattices and layered structures in a fast and precisely controlled manner

  15. Electronic properites of electron-doped cuprate superconductors probed by high-field magnetotransport

    International Nuclear Information System (INIS)

    Helm, Toni

    2013-01-01

    In the present work the normal-state properties of the electron-doped cuprate superconductor Nd 2-x Ce x CuO 4 (NCCO) are investigated for a broad doping range, covering almost the whole phase diagram of this material. Magnetotransport measurements in the world's highest non-destructive magnetic fields were used as a spectroscopic tool for probing the electronic structure of single-crystalline NCCO as a function of the carrier concentration x. Quantum and semiclassical oscillations in the magnetoresistance provided new insights into various properties of the Fermi surface and the nature of the ground state in the system. The detailed investigations of the field- and temperature-dependent transport and its dependence on the field orientation have revealed a close correlation between symmetry-breaking ordering instabilities and the superconducting state.

  16. Electronic properites of electron-doped cuprate superconductors probed by high-field magnetotransport

    Energy Technology Data Exchange (ETDEWEB)

    Helm, Toni

    2013-09-18

    In the present work the normal-state properties of the electron-doped cuprate superconductor Nd{sub 2-x}Ce{sub x}CuO{sub 4} (NCCO) are investigated for a broad doping range, covering almost the whole phase diagram of this material. Magnetotransport measurements in the world's highest non-destructive magnetic fields were used as a spectroscopic tool for probing the electronic structure of single-crystalline NCCO as a function of the carrier concentration x. Quantum and semiclassical oscillations in the magnetoresistance provided new insights into various properties of the Fermi surface and the nature of the ground state in the system. The detailed investigations of the field- and temperature-dependent transport and its dependence on the field orientation have revealed a close correlation between symmetry-breaking ordering instabilities and the superconducting state.

  17. Electronic properites of electron-doped cuprate superconductors probed by high-field magnetotransport

    Energy Technology Data Exchange (ETDEWEB)

    Helm, Toni

    2013-09-18

    In the present work the normal-state properties of the electron-doped cuprate superconductor Nd{sub 2-x}Ce{sub x}CuO{sub 4} (NCCO) are investigated for a broad doping range, covering almost the whole phase diagram of this material. Magnetotransport measurements in the world's highest non-destructive magnetic fields were used as a spectroscopic tool for probing the electronic structure of single-crystalline NCCO as a function of the carrier concentration x. Quantum and semiclassical oscillations in the magnetoresistance provided new insights into various properties of the Fermi surface and the nature of the ground state in the system. The detailed investigations of the field- and temperature-dependent transport and its dependence on the field orientation have revealed a close correlation between symmetry-breaking ordering instabilities and the superconducting state.

  18. High-temperature electron-hole superfluidity with strong anisotropic gaps in double phosphorene monolayers

    Science.gov (United States)

    Saberi-Pouya, S.; Zarenia, M.; Perali, A.; Vazifehshenas, T.; Peeters, F. M.

    2018-05-01

    Excitonic superfluidity in double phosphorene monolayers is investigated using the BCS mean-field equations. Highly anisotropic superfluidity is predicted where we found that the maximum superfluid gap is in the Bose-Einstein condensate (BEC) regime along the armchair direction and in the BCS-BEC crossover regime along the zigzag direction. We estimate the highest Kosterlitz-Thouless transition temperature with maximum value up to ˜90 K with onset carrier densities as high as 4 ×1012cm-2 . This transition temperature is significantly larger than what is found in double electron-hole few-layers graphene. Our results can guide experimental research toward the realization of anisotropic condensate states in electron-hole phosphorene monolayers.

  19. STANFORD: Producing highly polarized electrons (2)

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    Electron spin polarization above 70% by photoemission from a specially prepared semiconductor has been achieved by T. Maruyama and E. Garwin of the Stanford Linear Accelerator Center (SLAC), R. Prepost and G. Zapalac of Wisconsin, and J. Walker and S. Smith of Berkeley

  20. Scattering of high energy electrons on deuteron

    International Nuclear Information System (INIS)

    Grossetete, B.

    1964-12-01

    The aim of this work is to obtain information on the neutron form factor from the study of the scattering of electrons on deuterium. The first part is dedicated to the theoretical study of the elastic and inelastic scattering. We introduce different form factors: Sachs form factor, the Pauli and Dirac form factors, they appear in the analytic expression of the scattering cross-section. We show how the deuteron form factors can be deduced from neutron's and proton's form factors. In the case of the inelastic scattering we show how the cross section can be broken into components associated to partial waves and we obtain different formulas for the inelastic cross-section based on the Breit formula or the Durand formalism. The second part is dedicated to the experiment setting of electron scattering on deuterium. The elastic scattering experiment has been made on solid or liquid CD 2 targets while inelastic scattering has been studied on a liquid target. We have used an electron beam produced by the Orsay linear accelerator and the scattered electrons have been analysed by a magnetic spectrometer and a Cerenkov detector. The results give a very low value (slightly positive)for the charge form factor of the neutron and a magnetic form factor for the neutron slightly below that of the proton [fr

  1. Electronic ceramics in high-temperature environments

    International Nuclear Information System (INIS)

    Searcy, A.W.; Meschi, D.J.

    1982-01-01

    Simple thermodynamic means are described for understanding and predicting the influence of temperature changes, in various environments, on electronic properties of ceramics. Thermal gradients, thermal cycling, and vacuum annealing are discussed, as well as the variations of ctivities and solubilities with temperature. 7 refs

  2. Electron beam generation in high voltage glow discharges

    International Nuclear Information System (INIS)

    Rocca, J.J.; Szapiro, B.; Murray, C.

    1989-01-01

    The generation of intense CW and pulsed electron beams in glow discharges in reviewed. Glow discharge electron guns operate at a pressure of the order of 1 Torr and often have an advantage in applications that require a broad area electron beam in a gaseous atmosphere, such as laser excitation and some aspects of materials processing. Aspects of electron gun design are covered. Diagnostics of the high voltage glow discharges including the electric field distribution mapped by Doppler free laser spectroscopy, and plasma density and electron temperature measurements of the electron yield of different cathode materials under glow discharge conditions are presented

  3. Highly solvatochromic emission of electron donor-acceptor compounds containing propanedioato boron electron acceptors

    NARCIS (Netherlands)

    Brouwer, A.M.; Bakker, N.A.C.; Wiering, P.G.; Verhoeven, J.W.

    1991-01-01

    Light-induced electron transfer occurs in bifunctional compounds consisting of 1,3-diphenylpropanedioato boron oxalate or fluoride electron acceptors and simple aromatic electron-donor groups, linked by a methylene bridge; fluorescence from the highly polar charge-transfer excited state is

  4. Highly efficient electron gun with a single-atom electron source

    International Nuclear Information System (INIS)

    Ishikawa, Tsuyoshi; Urata, Tomohiro; Cho, Boklae; Rokuta, Eiji; Oshima, Chuhei; Terui, Yoshinori; Saito, Hidekazu; Yonezawa, Akira; Tsong, Tien T.

    2007-01-01

    The authors have demonstrated highly collimated electron-beam emission from a practical electron gun with a single-atom electron source; ∼80% of the total emission current entered the electron optics. This ratio was two or three orders of magnitude higher than those of the conventional electron sources such as a cold field emission gun and a Zr/O/W Schottky gun. At the pressure of less than 1x10 -9 Pa, the authors observed stable emission of 20 nA, which generates the specimen current of 5 pA required for scanning electron microscopes

  5. High-Current Plasma Electron Sources

    International Nuclear Information System (INIS)

    Gushenets, J.Z.; Krokhmal, V.A.; Krasik, Ya. E.; Felsteiner, J.; Gushenets, V.

    2002-01-01

    In this report we present the design, electrical schemes and preliminary results of a test of 4 different electron plasma cathodes operating under Kg h-voltage pulses in a vacuum diode. The first plasma cathode consists of 6 azimuthally symmetrically distributed arc guns and a hollow anode having an output window covered by a metal grid. Plasma formation is initiated by a surface discharge over a ceramic washer placed between a W-made cathode and an intermediate electrode. Further plasma expansion leads to a redistribution of the discharge between the W-cathode and the hollow anode. An accelerating pulse applied between the output anode grid and the collector extracts electrons from this plasma. The operation of another plasma cathode design is based on Penning discharge for preliminary plasma formation. The main glow discharge occurs between an intermediate electrode of the Penning gun and the hollow anode. To keep the background pressure in the accelerating gap at P S 2.5x10 4 Torr either differential pumping or a pulsed gas puff valve were used. The operation of the latter electron plasma source is based on a hollow cathode discharge. To achieve a sharp pressure gradient between the cathode cavity and the accelerating gap a pulsed gas puff valve was used. A specially designed ferroelectric plasma cathode initiated plasma formation inside the hollow cathode. This type of the hollow cathode discharge ignition allowed to achieve a discharge current of 1.2 kA at a background pressure of 2x10 4 Torr. All these cathodes were developed and initially tested inside a planar diode with a background pressure S 2x10 4 Torr under the same conditions: accelerating voltage 180 - 300 kV, pulse duration 200 - 400 ns, electron beam current - 1 - 1.5 kA, and cross-sectional area of the extracted electron beam 113 cm 2

  6. Feasibility of high-speed power line carrier system to Japanese overhead low voltage distribution lines; Teiatsu haidensen hanso no kosokuka no kanosei (hanso sningo denpa purogram no kanosei)

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, T.; Takeshita, K.; Ishino, R.

    2000-06-01

    The high-speed distribution line carrier systems on underground distribution lines are being developed in Germany. To estimate these systems on Japanese overhead low voltage distribution lines, the Carrier Propagation Program has been developed and applicability of OFDM system was roughly estimated. 1. Carrier Propagation Program Carrier Propagation Program that calculates the carrier propagation characteristics of any line structure was developed. 2. Carrier propagation characteristics Carrier propagation characteristics on typical Japanese overhead low voltage distribution lines were calculated 3.Rough estimation of OFDM system Electric fields caused by carrier at near point were calculated on the basis on carrier propagation characteristics. Results of rough estimation are as follows: - Electric field caused by carrier of more than 2Mbps system exceeds the value of the regulation. (author)

  7. Generation of tunable, high repetition rate frequency combs with equalized spectra using carrier injection based silicon modulators

    Science.gov (United States)

    Nagarjun, K. P.; Selvaraja, Shankar Kumar; Supradeepa, V. R.

    2016-03-01

    High repetition-rate frequency combs with tunable repetition rate and carrier frequency are extensively used in areas like Optical communications, Microwave Photonics and Metrology. A common technique for their generation is strong phase modulation of a CW-laser. This is commonly implemented using Lithium-Niobate based modulators. With phase modulation alone, the combs have poor spectral flatness and significant number of missing lines. To overcome this, a complex cascade of multiple intensity and phase modulators are used. A comb generator on Silicon based on these principles is desirable to enable on-chip integration with other functionalities while reducing power consumption and footprint. In this work, we analyse frequency comb generation in carrier injection based Silicon modulators. We observe an interesting effect in these comb generators. Enhanced absorption accompanying carrier injection, an undesirable effect in data modulators, shapes the amplitude here to enable high quality combs from a single modulator. Thus, along with reduced power consumption to generate a specific number of lines, the complexity has also been significantly reduced. We use a drift-diffusion solver and mode solver (Silvaco TCAD) along with Soref-Bennett relations to calculate the variations in refractive indices and absorption of an optimized Silicon PIN - waveguide modulator driven by an unbiased high frequency (10 Ghz) voltage signal. Our simulations demonstrate that with a device length of 1 cm, a driving voltage of 2V and minor shaping with a passive ring-resonator filter, we obtain 37 lines with a flatness better than 5-dB across the band and power consumption an order of magnitude smaller than Lithium-Niobate modulators.

  8. Extracting hot carriers from photoexcited semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  9. Two-frequency method for measuring Hall emf in high-resistive materials with charge-carrier low mobility

    International Nuclear Information System (INIS)

    Aleksandrov, A.L.; Vedeneev, A.S.; Gulyaev, I.B.; Zhdan, A.G.

    1982-01-01

    A facility for measuring Hall emf in high-resistive materials with low mobility of charge carriers by the two-frequency method using digital synchronous integration is described. The facility permits to detect the minimum Hall emf approxamatety equat to 5 μV at approximatety equal to 1 T Ohm of the investigated.sample resistance during the measuring time of approximately equal to 2000 s. Sensitivity by Hall mobility makes up >= 0.01 cm 2 /Vxs at the same measuring time. Measuring results of the Hall emf on GaAs monocrystals, CdSe films and island film of gold are presented

  10. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    KAUST Repository

    Burke, Timothy M.

    2013-12-27

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. How High Local Charge Carrier Mobility and an Energy Cascade in a Three-Phase Bulk Heterojunction Enable >90% Quantum Efficiency

    KAUST Repository

    Burke, Timothy M.; McGehee, Michael D.

    2013-01-01

    Charge generation in champion organic solar cells is highly efficient in spite of low bulk charge-carrier mobilities and short geminate-pair lifetimes. In this work, kinetic Monte Carlo simulations are used to understand efficient charge generation in terms of experimentally measured high local charge-carrier mobilities and energy cascades due to molecular mixing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Electron capture by highly stripped ions

    International Nuclear Information System (INIS)

    Greenland, P.T.

    1981-06-01

    This review describes theories of electron capture suitable for the description of rearrangement collisions between atomic hydrogen and completely stripped projectiles with charge greater than unity. The region of impact velocity considered lies between 0.05 and 3 au, which is of technological importance in fusion power devices. The semiclassical, impact parameter formalism is discussed and the use of atomic expansions at medium impact velocity is described. Experimental results for both completely and partially stripped projectiles are reviewed. The use of a molecular basis at low energy, and the role of pseudocrossings peculiar to the two centre Coulomb interaction are described. Finally, purely classical techniques, in which the electron wavefunction is represented by an ensemble of Kepler orbits are considered. The review was completed in February 1981. (author)

  13. Scatterings and Quantum Effects in (Al ,In )N /GaN Heterostructures for High-Power and High-Frequency Electronics

    Science.gov (United States)

    Wang, Leizhi; Yin, Ming; Khan, Asif; Muhtadi, Sakib; Asif, Fatima; Choi, Eun Sang; Datta, Timir

    2018-02-01

    Charge transport in the wide-band-gap (Al ,In )N /GaN heterostructures with high carrier density approximately 2 ×1013 cm-2 is investigated over a large range of temperature (270 mK ≤T ≤280 K ) and magnetic field (0 ≤B ≤18 T ). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23 me is determined. Furthermore, the linear dependence with temperature (T power and high-frequency electronics.

  14. Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

    Science.gov (United States)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2018-01-01

    Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-principles simulations to evaluate concepts such as the electron effective mass for disordered systems since the absence of periodicity induced by the disorder precludes the use of common concepts derived from condensed matter physics. In this paper, we propose a methodology based on first-principles simulations that partially solves this problem, by quantifying the degree of delocalization of a wave function and of the connectivity between the atomic sites within this electronic state. We validate the robustness of the proposed formalism on crystalline and molecular systems and extend the insights gained to disordered/amorphous InGaZnO4 and Si. We also explore the properties of p -type oxide semiconductor candidates recently reported to have a low effective mass in their crystalline phases [G. Hautier et al., Nat. Commun. 4, 2292 (2013), 10.1038/ncomms3292]. Although in their amorphous phase none of the candidates present a valence band with delocalization properties matching those found in the conduction band of amorphous InGaZnO4, three of the seven analyzed materials show some potential. The most promising candidate, K2Sn2O3 , is expected to possess in its amorphous phase a slightly higher hole mobility than the electron mobility in amorphous silicon.

  15. Real-Space Imaging of Carrier Dynamics of Materials Surfaces by Second-Generation Four-Dimensional Scanning Ultrafast Electron Microscopy

    KAUST Repository

    Sun, Jingya

    2015-09-14

    In the fields of photocatalysis and photovoltaics, ultrafast dynamical processes, including carrier trapping and recombination on material surfaces, are among the key factors that determine the overall energy conversion efficiency. A precise knowledge of these dynamical events on the nanometer (nm) and femtosecond (fs) scales was not accessible until recently. The only way to access such fundamental processes fully is to map the surface dynamics selectively in real space and time. In this study, we establish a second generation of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) and demonstrate the ability to record time-resolved images (snapshots) of material surfaces with 650 fs and ∼5 nm temporal and spatial resolutions, respectively. In this method, the surface of a specimen is excited by a clocking optical pulse and imaged using a pulsed primary electron beam as a probe pulse, generating secondary electrons (SEs), which are emitted from the surface of the specimen in a manner that is sensitive to the local electron/hole density. This method provides direct and controllable information regarding surface dynamics. We clearly demonstrate how the surface morphology, grains, defects, and nanostructured features can significantly impact the overall dynamical processes on the surface of photoactive-materials. In addition, the ability to access two regimes of dynamical probing in a single experiment and the energy loss of SEs in semiconductor-nanoscale materials will also be discussed.

  16. Electron diffraction determination of 11.5 Å and HySo structures: candidate water carriers to the Upper Mantle

    Czech Academy of Sciences Publication Activity Database

    Gemmi, M.; Merlini, M.; Palatinus, Lukáš; Fumagalli, P.; Hanfland, M.

    2016-01-01

    Roč. 101, č. 12 (2016), s. 2645-2654 ISSN 0003-004X Institutional support: RVO:68378271 Keywords : subduction * MASH system * electron diffraction tomography Subject RIV: DB - Geology ; Mineralogy Impact factor: 2.021, year: 2016

  17. ELECTRON CLOUD EFFECTS IN HIGH INTENSITY PROTON ACCELERATORS

    International Nuclear Information System (INIS)

    Wei, J.; Macek, R.J.

    2002-01-01

    One of the primary concerns in the design and operation of high-intensity proton synchrotrons and accumulators is the electron cloud and associated beam loss and instabilities. Electron-cloud effects are observed at high-intensity proton machines like the Los Alamos National Laboratory's PSR and CERN's SPS, and investigated experimentally and theoretically. In the design of next-generation high-intensity proton accelerators like the Spallation Neutron Source ring, emphasis is made in minimizing electron production and in enhancing Landau damping. This paper reviews the present understanding of the electron-cloud effects and presents mitigation measures

  18. ELECTRON CLOUD EFFECTS IN HIGH INTENSITY PROTON ACCELERATORS.

    Energy Technology Data Exchange (ETDEWEB)

    WEI,J.; MACEK,R.J.

    2002-04-14

    One of the primary concerns in the design and operation of high-intensity proton synchrotrons and accumulators is the electron cloud and associated beam loss and instabilities. Electron-cloud effects are observed at high-intensity proton machines like the Los Alamos National Laboratory's PSR and CERN's SPS, and investigated experimentally and theoretically. In the design of next-generation high-intensity proton accelerators like the Spallation Neutron Source ring, emphasis is made in minimizing electron production and in enhancing Landau damping. This paper reviews the present understanding of the electron-cloud effects and presents mitigation measures.

  19. High-power fiber lasers for photocathode electron injectors

    Directory of Open Access Journals (Sweden)

    Zhi Zhao

    2014-05-01

    Full Text Available Many new applications for electron accelerators require high-brightness, high-average power beams, and most rely on photocathode-based electron injectors as a source of electrons. To achieve such a photoinjector, one requires both a high-power laser system to produce the high average current beam, and also a system at reduced repetition rate for electron beam diagnostics to verify high beam brightness. Here we report on two fiber laser systems designed to meet these specific needs, at 50 MHz and 1.3 GHz repetition rate, together with pulse pickers, second harmonic generation, spatiotemporal beam shaping, intensity feedback, and laser beam transport. The performance and flexibility of these laser systems have allowed us to demonstrate electron beam with both low emittance and high average current for the Cornell energy recovery linac.

  20. Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures

    International Nuclear Information System (INIS)

    Fedoryshyn, Yuriy; Ostinelli, Olivier; Alt, Andreas; Pallin, Angel; Bolognesi, Colombo R.

    2014-01-01

    The optimization of heavily strained Ga 0.25 In 0.75 As/Al 0.48 In 0.52 As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm 2 /Vs and 70 000 cm 2 /Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10 12  cm −2 throughout the entire study

  1. High Resolution Electron Microscopy in Materials Science

    International Nuclear Information System (INIS)

    Amelinckx, S.

    1986-01-01

    This paper illustrates different operating modes of the electron microscope and shows the image formation in an ideal microscope. Diffraction contrast is used in the study of crystal defects, such as dislocations and planar interfaces. Methods are surveyed which give at least a rudimentary image of the lattice and therefore make use of at least two interfering beams. Special attention is given to images which also carry structural information and therefore imply the use of many beams. The underlying theory is discussed as are the theories of Van Dyck, Spence and Cowley. These are illustrated by means of a number of recent case studies

  2. LAT Perspectives in Detection of High Energy Cosmic Ray Electrons

    International Nuclear Information System (INIS)

    Moiseev, Alexander; Ormes, J.F.; Funk, Stefan

    2007-01-01

    The LAT science objectives and capabilities in the detection of high energy electrons in the energy range from 20 GeV to ∼1.5 TeV are presented. LAT simulations are used to establish the event selections. It is found that maintaining the efficiency of electron detection at the level of 30%, the residual hadron contamination does not exceed 2-3% of the electron flux. It is expected to collect ∼ ten million of electrons with the energy above 20 GeV for one year of observation. Precise spectrum reconstruction with collected electron statistics opens the unique opportunity to investigate several important problems such as models of IC radiation, revealing the signatures of nearby sources such as high energy cutoff in the electron spectrum, testing the propagation model, and search for KKDM particles decay through their contribution to the electron spectrum

  3. On some aspects of high voltage electron microscopy

    International Nuclear Information System (INIS)

    Jouffrey, B.; Trinquier, J.

    1987-01-01

    The present paper deals with high voltage electron microscopy (HVEM). It is an overview on this domain due to the pionneer work of G. Dupouy which has permitted to perform a new kind of electron microscopy. Since this time, HVEM has shown its interest in high resolution, irradiations, chemical analysis, in situ experiments

  4. On the electronic structure of high Tc superconductors

    International Nuclear Information System (INIS)

    Fink, J.; Nuecker, N.; Romberg, H.; Alexander, M.; Knupfer, M.; Mante, J.; Claessen, R.; Buslaps, T.; Harm, S.; Manzke, R.; Skibowski, M.

    1992-01-01

    Studies of the electronic structure of high-T c superconductors and related compounds by high-energy spectroscopies are reviewed. In particular, we report on investigations by electron energy-loss, angle-resolved photoemission, and inverse angle-resolved photoemission spectroscopy. Information on the symmetry and the character of states close to the Fermi level has been obtained. 25 refs., 8 figs

  5. Photoinduced Field-Effect Passivation from Negative Carrier Accumulation for High-Efficiency Silicon/Organic Heterojunction Solar Cells.

    Science.gov (United States)

    Liu, Zhaolang; Yang, Zhenhai; Wu, Sudong; Zhu, Juye; Guo, Wei; Sheng, Jiang; Ye, Jichun; Cui, Yi

    2017-12-26

    Carrier recombination and light management of the dopant-free silicon/organic heterojunction solar cells (HSCs) based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) are the critical factors in developing high-efficiency photovoltaic devices. However, the traditional passivation technologies can hardly provide efficient surface passivation on the front surface of Si. In this study, a photoinduced electric field was induced in a bilayer antireflective coating (ARC) of polydimethylsiloxane (PDMS) and titanium oxide (TiO 2 ) films, due to formation of an accumulation layer of negative carriers (O 2 - species) under UV (sunlight) illumination. This photoinduced field not only suppressed the silicon surface recombination but also enhanced the built-in potential of HSCs with 84 mV increment. In addition, this photoactive ARC also displayed the outstanding light-trapping capability. The front PEDOT:PSS/Si HSC with the saturated O 2 - received a champion PCE of 15.51% under AM 1.5 simulated sunlight illumination. It was clearly demonstrated that the photoinduced electric field was a simple, efficient, and low-cost method for the surface passivation and contributed to achieve a high efficiency when applied in the Si/PEDOT:PSS HSCs.

  6. DRD4 long allele carriers show heightened attention to high-priority items relative to low-priority items.

    Science.gov (United States)

    Gorlick, Marissa A; Worthy, Darrell A; Knopik, Valerie S; McGeary, John E; Beevers, Christopher G; Maddox, W Todd

    2015-03-01

    Humans with seven or more repeats in exon III of the DRD4 gene (long DRD4 carriers) sometimes demonstrate impaired attention, as seen in attention-deficit hyperactivity disorder, and at other times demonstrate heightened attention, as seen in addictive behavior. Although the clinical effects of DRD4 are the focus of much work, this gene may not necessarily serve as a "risk" gene for attentional deficits, but as a plasticity gene where attention is heightened for priority items in the environment and impaired for minor items. Here we examine the role of DRD4 in two tasks that benefit from selective attention to high-priority information. We examine a category learning task where performance is supported by focusing on features and updating verbal rules. Here, selective attention to the most salient features is associated with good performance. In addition, we examine the Operation Span (OSPAN) task, a working memory capacity task that relies on selective attention to update and maintain items in memory while also performing a secondary task. Long DRD4 carriers show superior performance relative to short DRD4 homozygotes (six or less tandem repeats) in both the category learning and OSPAN tasks. These results suggest that DRD4 may serve as a "plasticity" gene where individuals with the long allele show heightened selective attention to high-priority items in the environment, which can be beneficial in the appropriate context.

  7. Electron acceleration via high contrast laser interacting with submicron clusters

    International Nuclear Information System (INIS)

    Zhang Lu; Chen Liming; Wang Weiming; Yan Wenchao; Yuan Dawei; Mao Jingyi; Wang Zhaohua; Liu Cheng; Shen Zhongwei; Li Yutong; Dong Quanli; Lu Xin; Ma Jinglong; Wei Zhiyi; Faenov, Anatoly; Pikuz, Tatiana; Li Dazhang; Sheng Zhengming; Zhang Jie

    2012-01-01

    We experimentally investigated electron acceleration from submicron size argon clusters-gas target irradiated by a 100 fs, 10 TW laser pulses having a high-contrast. Electron beams are observed in the longitudinal and transverse directions to the laser propagation. The measured energy of the longitudinal electron reaches 600 MeV and the charge of the electron beam in the transverse direction is more than 3 nC. A two-dimensional particle-in-cell simulation of the interaction has been performed and it shows an enhancement of electron charge by using the cluster-gas target.

  8. Strong electron-phonon interaction in the high-Tc superconductors: Evidence from the infrared

    International Nuclear Information System (INIS)

    Timusk, T.; Porter, C.D.; Tanner, D.B.

    1991-01-01

    We show that low-frequency structure in the infrared reflectance of the high-temperature superconductor YBa 2 Cu 3 O 7 results from the electron-phonon interaction. Characteristic antiresonant line shapes are seen in the phonon region of the spectrum and the frequency-dependent scattering rate of the mid-infrared electronic continuum has peaks at 150 cm -1 (19 meV) and at 360 cm -1 (45 meV) in good agreement with phonon density-of-states peaks in neutron time-of-flight spectra that develop in superconducting samples. The interaction between the phonons and the charge carriers can be understood in terms of a charged-phonon model

  9. Nanoliposomal carriers for improvement the bioavailability of high - valued phenolic compounds of pistachio green hull extract.

    Science.gov (United States)

    Rafiee, Zahra; Barzegar, Mohsen; Sahari, Mohammad Ali; Maherani, Behnoush

    2017-04-01

    In present study, nanoliposomes were prepared by thin hydration method with different concentrations of phenolic compounds (500, 750 and 1000ppm) of pure extract and lecithin (1, 2 and 3%w/w) and characterized by considering the particle size, polydispersity index (PDI), zeta potential, encapsulation efficiency (EE) and morphology. The results showed that nanoliposome (90.39-103.78nm) had negative surface charge varied from -51.5±0.9 to -40.2±0.2mV with a narrow size distribution (PDI≈0.069-0.123). Nanoliposomes composed of 1% lecithin with 1000ppm of phenolic compounds had the highest EE (52.93%). The FTIR analysis indicated the formation of hydrogen bonds between the polar zone of phospholipid and the OH groups of phenolic compounds. Phenolic compounds also increased phase transition temperature (Tc) of nanoliposomes (2.01-7.24°C). Moreover, nanoliposomes had considerable stability during storage. Consequently, liposome is an efficient carrier for protection and improving PGHE biofunctional actives in foodstuffs. Copyright © 2016 Elsevier Ltd. All rights reserved.

  10. Generation of Low-Energy High-Current Electron Beams in Plasma-Anode Electron Guns

    Science.gov (United States)

    Ozur, G. E.; Proskurovsky, D. I.

    2018-01-01

    This paper is a review of studies on the generation of low-energy high-current electron beams in electron guns with a plasma anode and an explosive-emission cathode. The problems related to the initiation of explosive electron emission under plasma and the formation and transport of high-current electron beams in plasma-filled systems are discussed consecutively. Considerable attention is given to the nonstationary effects that occur in the space charge layers of plasma. Emphasis is also placed on the problem of providing a uniform energy density distribution over the beam cross section, which is of critical importance in using electron beams of this type for surface treatment of materials. Examples of facilities based on low-energy high-current electron beam sources are presented and their applications in materials science and practice are discussed.

  11. Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

    Science.gov (United States)

    Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

    2018-01-01

    Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

  12. Improved Electron Yield and Spin-Polarization from III-V Photocathodes via Bias Enhanced Carrier Drift: Final Report

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.

    2006-01-01

    In this DOE STTR program, Saxet Surface Science, with the Stanford Linear Accelerator Center as partner, designed, built and tested photocathode structures such that optimal drift-enhanced spin-polarization from GaAs based photoemitters was achieved with minimal bias supply requirements. The forward bias surface grid composition was optimized for maximum polarization and yield, together with other construction parameters including doping profile. This program has culminated in a cathode bias structure affording increased electron spin polarization when applied to III-V based photocathodes. The optimized bias structure has been incorporated into a cathode mounting and biasing design for use in a polarized electron gun.

  13. CAMAC high energy physics electronics hardware

    International Nuclear Information System (INIS)

    Kolpakov, I.F.

    1977-01-01

    CAMAC hardware for high energy physics large spectrometers and control systems is reviewed as is the development of CAMAC modules at the High Energy Laboratory, JINR (Dubna). The total number of crates used at the Laboratory is 179. The number of CAMAC modules of 120 different types exceeds 1700. The principles of organization and the structure of developed CAMAC systems are described. (author)

  14. Electronic DC transformer with high power density

    NARCIS (Netherlands)

    Pavlovský, M.

    2006-01-01

    This thesis is concerned with the possibilities of increasing the power density of high-power dc-dc converters with galvanic isolation. Three cornerstones for reaching high power densities are identified as: size reduction of passive components, reduction of losses particularly in active components

  15. The influence of electron irradiation at the various temperatures and annealing on carriers mobility at the low temperatures in neutron transmutation doped gallium arsenide

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Troshchinskii, V.T.; Shesholko, V.K.

    1999-01-01

    The influence of electron irradiation at the various temperatures and annealing on measured at T=100 K carriers mobility in neutron transmutation doped GaAs have been investigated. It was detected that rate of mobility decreasing with irradiation dose increasing decreases when irradiation temperature increases. It was shown that at the same time it take place the radiation defects creating and their particular or full annealing (in the dependence on irradiation temperature). Radiation stimulated annealing (annealing that take place during irradiation at the elevated temperatures) is more effective than the annealing at the same temperatures that take place after crystals are irradiated at room temperature. It means that any defects annealing during irradiation at elevated temperatures take place at more low temperatures than that during annealing after irradiation at room temperature

  16. Results from Coupled Optical and Electrical Sentaurus TCAD Models of a Gallium Phosphide on Silicon Electron Carrier Selective Contact Solar Cell

    Energy Technology Data Exchange (ETDEWEB)

    Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Green, Martin

    2014-06-09

    We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell. Detailed analyses of current and voltage performance are presented for devices having substrate thicknesses of 10 μm, 50 μm, 100 μm and 150 μm, and with GaP/Si interfacial quality ranging from very poor to excellent. Ultimate potential performance was investigated using optical absorption profiles consistent with light trapping schemes of random pyramids with attached and detached rear reflector, and planar with an attached rear reflector. Results indicate Auger-limited open-circuit voltages up to 787 mV and efficiencies up to 26.7% may be possible for front-contacted devices.

  17. Overlap of electron core states for very high compressions

    International Nuclear Information System (INIS)

    Straub, G.

    1985-01-01

    At normal density and for modest compressions, the electronic structure of a metal can be accurately described by treating the conduction electrons and their interactions with the usual methods of band theory. The core electrons remain essentially the same as for an isolated free atom and do not participate in the bonding forces responsible for creating a condensed phase. As the density increases, the core electrons begin to ''see'' one another as the overlap of the tails of wave functions can no longer be neglected. The electronic structure of the core electrons is responsible for an effective repulsive interaction that eventually becomes free-electron-like at very high compressions. The electronic structure of the interacting core electrons may be treated in a simple manner using the Atomic Surface Method (ASM). The ASM is a first-principles treatment of the electronic structure involving a rigorous integration of the Schroedinger equation within the atomic-sphere approximation. Solid phase wave functions are constructed from isolated atom wave functions and the band width W/sub l/ and the center of gravity of the band C/sub l/ are obtained from simple formulas. The ASM can also utilize analytic forms of the atomic wave functions and thus provide direct functional dependence of various aspects of the electronic structure. Of particular use in understanding the behavior of the core electrons, the ASM provides the analytic density dependence of the band widths and positions. 8 refs., 2 figs., 1 tab

  18. Influence of high energy electrons on ECRH in LHD

    Directory of Open Access Journals (Sweden)

    Ogasawara S.

    2012-09-01

    Full Text Available The central bulk electron temperature of more than 20 keV is achieved in LHD as a result of increasing the injection power and the lowering the electron density near 2 × 1018 m−3. Such collision-less regime is important from the aspect of the neoclassical transport and also the potential structure formation. The presences of appreciable amount of high energy electrons are indicated from hard X-ray PHA, and the discrepancy between the stored energy and kinetic energy estimated from Thomson scattering. ECE spectrum are also sensitive to the presence of high energy electrons and discussed by solving the radiation transfer equation. The ECRH power absorption to the bulk and the high energy electrons are dramatically affected by the acceleration and the confinement of high energy electrons. The heating mechanisms and the acceleration process of high energy electrons are discussed by comparing the experimental results and the ray tracing calculation under assumed various density and mean energy of high energy electrons.

  19. The Impact of Metallic Impurities on Minority Carrier Lifetime in High Purity N-type Silicon

    Science.gov (United States)

    Yoon, Yohan

    Boron-doped p-type silicon is the industry standard silicon solar cell substrate. However, it has serious limitations: iron boron (Fe-B) pairs and light induced degradation (LID). To suppress LID, the replacement of boron by gallium as a p-type dopant has been proposed. Although this eliminates B-O related defects, gallium-related pairing with iron, oxygen, and carbon can reduce lifetime in this material. In addition resistivity variations are more pronounced in gallium doped ingots, however Continuous-Czochralski (c-Cz) growth technologies are being developed to overcome this problem. In this work lifetime limiting factors and resistivity variations have been investigated in this material. The radial and axial variations of electrically active defects were observed using deep level transient spectroscopy (DLTS) these have been correlated to lifetime and resistivity variations. The DLTS measurements demonstrated that iron-related pairs are responsible for the lifetime variations. Specifically, Fe-Ga pairs were found to be important recombination sites and are more detrimental to lifetime than Fei. Typically n-type silicon has a higher minority carrier lifetime than p-type silicon with similar levels of contamination. That is because n-type silicon is more tolerant to metallic impurities, especially Fe. Also, it has no serious issues in relation to lifetime degradation, such as FeB pairs and light-induced degradation (LID). However, surface passivation of the p + region in p+n solar cells is much more problematic than the n+p case where silicon nitride provides very effective passivation of the cell. SiO2 is the most effective passivation for n type surfaces, but it does not work well on B-doped surfaces, resulting in inadequate performance. Al2O3 passivation layer suggested for B-doped emitters. With this surface passivation layer a 23.2 % conversion efficiency has been achieved. After this discovery n-type silicon is now being seriously considered for

  20. Formation of a high quality electron beam using photo cathode RF electron gun

    International Nuclear Information System (INIS)

    Washio, Masakazu

    2000-01-01

    Formation of a high quality electron beam using photo cathode RF electron gun is expected for formation of a next generation high brilliant X-ray beam and a source for electron and positron collider. And, on a field of material science, as is possible to carry out an experiment under ultra short pulse and extremely high precision in time, it collects large expectation. Recently, formation of high quality beam possible to develop for multi directions and to use by everyone in future has been able to realize. Here were explained on electron beam source, principle and component on RF electron gun, working features on RF gun, features and simulation of RF gun under operation, and some views in near future. (G.K.)

  1. Nanostructures for Very High Frequency Electronics

    National Research Council Canada - National Science Library

    Gelmont, Boris

    2002-01-01

    The study of a new class of mesoscopic high frequency semi-conductor devices based on resonant tunneling in staggered-bandgap heterostructures with III-V semi-conductor ternary alloys such as AlGaSb...

  2. Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation

    Science.gov (United States)

    Hamm, Daniel S.; Rust, Mikah; Herrera, Elan H.; Matei, Liviu; Buliga, Vladimir; Groza, Michael; Burger, Arnold; Stowe, Ashley; Preston, Jeff; Lukosi, Eric D.

    2018-06-01

    This paper reports on the charge carrier properties of several lithium indium diselenide (LISe) semiconductors. It was found that the charge collection efficiency of LISe was improved after high flux thermal neutron irradiation including the presence of a typically unobservable alpha peak from hole-only collection. Charge carrier trap energies of the irradiated sample were measured using photo-induced current transient spectroscopy. Compared to previous studies of this material, no significant differences in trap energies were observed. Through trap-filled limited voltage measurements, neutron irradiation was found to increase the density of trap states within the bulk of the semiconductor, which created a polarization effect under alpha exposure but not neutron exposure. Further, the charge collection efficiency of the irradiated sample was higher (14-15 fC) than that of alpha particles (3-5 fC), indicating that an increase in hole signal contribution resulted from the neutron irradiation. Finally, it was observed that significant charge loss takes place near the point of generation, producing a significant scintillation response and artificially inflating the W-value of all semiconducting LISe crystals.

  3. Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

    Science.gov (United States)

    Kim, Sang Tae; Shin, Yeonwoo; Yun, Pil Sang; Bae, Jong Uk; Chung, In Jae; Jeong, Jae Kyeong

    2017-09-01

    This paper proposes a new defect engineering concept for low-cost In- and Ga-free zinc tin oxide (ZTO) thin-film transistors (TFTs). This concept is comprised of capping ZTO films with tantalum (Ta) and a subsequent modest thermal annealing treatment at 200 °C. The Ta-capped ZTO TFTs exhibited a remarkably high carrier mobility of 70.8 cm2/Vs, low subthreshold gate swing of 0.18 V/decade, threshold voltage of -1.3 V, and excellent ION/OFF ratio of 2 × 108. The improvement (> two-fold) in the carrier mobility compared to the uncapped ZTO TFT can be attributed to the effective reduction of the number of adverse tailing trap states, such as hydroxyl groups or oxygen interstitial defects, which stems from the scavenging effect of the Ta capping layer on the ZTO channel layer. Furthermore, the Ta-capped ZTO TFTs showed excellent positive and negative gate bias stress stabilities. [Figure not available: see fulltext.

  4. Toward High Carrier Mobility and Low Contact Resistance:Laser Cleaning of PMMA Residues on Graphene Surfaces

    Institute of Scientific and Technical Information of China (English)

    Yuehui Jia; Xin Gong; Pei Peng; Zidong Wang; Zhongzheng Tian; Liming Ren; Yunyi Fu; Han Zhang

    2016-01-01

    Poly(methyl methacrylate)(PMMA) is widely used for graphene transfer and device fabrication.However,it inevitably leaves a thin layer of polymer residues after acetone rinsing and leads to dramatic degradation of device performance.How to eliminate contamination and restore clean surfaces of graphene is still highly demanded.In this paper,we present a reliable and position-controllable method to remove the polymer residues on graphene films by laser exposure.Under proper laser conditions,PMMA residues can be substantially reduced without introducing defects to the underlying graphene.Furthermore,by applying this laser cleaning technique to the channel and contacts of graphene fieldeffect transistors(GFETs),higher carrier mobility as well as lower contact resistance can be realized.This work opens a way for probing intrinsic properties of contaminant-free graphene and fabricating high-performance GFETs with both clean channel and intimate graphene/metal contact.

  5. Radionuclide carrier

    International Nuclear Information System (INIS)

    Hartman, F.A.; Kretschmar, H.C.; Tofe, A.J.

    1978-01-01

    A physiologically acceptable particulate radionuclide carrier is described. It comprises a modified anionic starch derivative with 0.1% to 1.5% by weight of a reducing agent and 1 to 20% by weight of anionic substituents

  6. Carrier Screening

    Science.gov (United States)

    ... How accurate is carrier screening? No test is perfect. In a small number of cases, test results ... in which an egg is removed from a woman’s ovary, fertilized in a laboratory with the man’s ...

  7. Strongly correlated electrons at high pressure: an approach by inelastic X-Ray scattering

    International Nuclear Information System (INIS)

    Rueff, J.P.

    2007-06-01

    Inelastic X-ray scattering (IXS) and associated methods has turn out to be a powerful alternative for high-pressure physics. It is an all-photon technique fully compatible with high-pressure environments and applicable to a vast range of materials. Standard focalization of X-ray in the range of 100 microns is typical of the sample size in the pressure cell. Our main aim is to provide an overview of experimental results obtained by IXS under high pressure in 2 classes of materials which have been at the origin of the renewal of condensed matter physics: strongly correlated transition metal oxides and rare-earth compounds. Under pressure, d and f-electron materials show behaviors far more complex that what would be expected from a simplistic band picture of electron delocalization. These spectroscopic studies have revealed unusual phenomena in the electronic degrees of freedom, brought up by the increased density, the changes in the charge-carrier concentration, the over-lapping between orbitals, and hybridization under high pressure conditions. Particularly we discuss about pressure induced magnetic collapse and metal-insulator transitions in 3d compounds and valence fluctuations phenomena in 4f and 5f compounds. Thanks to its superior penetration depth, chemical selectivity and resonant enhancement, resonant inelastic X-ray scattering has appeared extremely well suited to high pressure physics in strongly correlated materials. (A.C.)

  8. Highly efficient electron vortex beams generated by nanofabricated phase holograms

    Energy Technology Data Exchange (ETDEWEB)

    Grillo, Vincenzo, E-mail: vincenzo.grillo@nano.cnr.it [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); CNR-IMEM Parco Area delle Scienze 37/A, I-43124 Parma (Italy); Carlo Gazzadi, Gian [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); Karimi, Ebrahim [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); Department of Physics, University of Ottawa, 150 Louis Pasteur, Ottawa, Ontario K1N 6N5 (Canada); Mafakheri, Erfan [Dipartimento di Fisica Informatica e Matematica, Università di Modena e Reggio Emilia, via G Campi 213/a, I-41125 Modena (Italy); Boyd, Robert W. [Department of Physics, University of Ottawa, 150 Louis Pasteur, Ottawa, Ontario K1N 6N5 (Canada); Frabboni, Stefano [CNR-Istituto Nanoscienze, Centro S3, Via G Campi 213/a, I-41125 Modena (Italy); Dipartimento di Fisica Informatica e Matematica, Università di Modena e Reggio Emilia, via G Campi 213/a, I-41125 Modena (Italy)

    2014-01-27

    We propose an improved type of holographic-plate suitable for the shaping of electron beams. The plate is fabricated by a focused ion beam on a silicon nitride membrane and introduces a controllable phase shift to the electron wavefunction. We adopted the optimal blazed-profile design for the phase hologram, which results in the generation of highly efficient (25%) electron vortex beams. This approach paves the route towards applications in nano-scale imaging and materials science.

  9. Ion induced high energy electron emission from copper

    International Nuclear Information System (INIS)

    Ruano, G.; Ferron, J.

    2008-01-01

    We present measurements of secondary electron emission from Cu induced by low energy bombardment (1-5 keV) of noble gas (He + , Ne + and Ar + ) and Li + ions. We identify different potential and kinetic mechanisms and find the presence of high energetic secondary electrons for a couple of ion-target combinations. In order to understand the presence of these fast electrons we need to consider the Fermi shuttle mechanism and the different ion neutralization efficiencies.

  10. Highly efficient electron vortex beams generated by nanofabricated phase holograms

    International Nuclear Information System (INIS)

    Grillo, Vincenzo; Carlo Gazzadi, Gian; Karimi, Ebrahim; Mafakheri, Erfan; Boyd, Robert W.; Frabboni, Stefano

    2014-01-01

    We propose an improved type of holographic-plate suitable for the shaping of electron beams. The plate is fabricated by a focused ion beam on a silicon nitride membrane and introduces a controllable phase shift to the electron wavefunction. We adopted the optimal blazed-profile design for the phase hologram, which results in the generation of highly efficient (25%) electron vortex beams. This approach paves the route towards applications in nano-scale imaging and materials science

  11. First high-temperature electronics products survey 2005.

    Energy Technology Data Exchange (ETDEWEB)

    Normann, Randy Allen

    2006-04-01

    On April 4-5, 2005, a High-Temperature Electronics Products Workshop was held. This workshop engaged a number of governmental and private industry organizations sharing a common interest in the development of commercially available, high-temperature electronics. One of the outcomes of this meeting was an agreement to conduct an industry survey of high-temperature applications. This report covers the basic results of this survey.

  12. Apparatus and method for generating high density pulses of electrons

    International Nuclear Information System (INIS)

    Lee, C.; Oettinger, P.E.

    1981-01-01

    An apparatus and method are described for the production of high density pulses of electrons using a laser energized emitter. Caesium atoms from a low pressure vapour atmosphere are absorbed on and migrate from a metallic target rapidly heated by a laser to a high temperature. Due to this heating time being short compared with the residence time of the caesium atoms adsorbed on the target surface, copious electrons are emitted which form a high current density pulse. (U.K.)

  13. Properties of the electron cloud in a high-energy positron and electron storage ring

    International Nuclear Information System (INIS)

    Harkay, K.C.; Rosenberg, R.A.

    2003-01-01

    Low-energy, background electrons are ubiquitous in high-energy particle accelerators. Under certain conditions, interactions between this electron cloud and the high-energy beam can give rise to numerous effects that can seriously degrade the accelerator performance. These effects range from vacuum degradation to collective beam instabilities and emittance blowup. Although electron-cloud effects were first observed two decades ago in a few proton storage rings, they have in recent years been widely observed and intensely studied in positron and proton rings. Electron-cloud diagnostics developed at the Advanced Photon Source enabled for the first time detailed, direct characterization of the electron-cloud properties in a positron and electron storage ring. From in situ measurements of the electron flux and energy distribution at the vacuum chamber wall, electron-cloud production mechanisms and details of the beam-cloud interaction can be inferred. A significant longitudinal variation of the electron cloud is also observed, due primarily to geometrical details of the vacuum chamber. Such experimental data can be used to provide realistic limits on key input parameters in modeling efforts, leading ultimately to greater confidence in predicting electron-cloud effects in future accelerators.

  14. Increase in electron mobility of InGaAs/InP composite channel high electron mobility transistor structure due to SiN passivation

    International Nuclear Information System (INIS)

    Liu Yuwei; Wang Hong; Radhakrishnan, K.

    2007-01-01

    The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structure has been studied. Different from the structures with single InGaAs channel, an increase in effective mobility μ e with a negligible change of sheet carrier density n s after SiN deposition is clearly observed in the composite channel structures. The enhancement of μ e could be explained under the framework of electrons transferring from the InP sub-channel into InGaAs channel region due to the energy band bending at the surface region caused by SiN passivation, which is further confirmed by low temperature photoluminescence measurements

  15. Enhanced photocatalytic activity of Te-doped Bi{sub 2}MoO{sub 6} under visible light irradiation: Effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shuguang, E-mail: csustcsg@yahoo.com; Li, Yuhan; Wu, Zixu; Wu, Baoxin; Li, Haibin; Li, Fujin

    2017-05-15

    Te-doped Bi{sub 2}MoO{sub 6} photocatalyst was hydrothermally synthesized, and nonmetal atoms Te were homogeneously incorporated into Bi{sub 2}MoO{sub 6} lattice with the substitution of Te{sup 4+} to Mo{sup 6+}. With increasing Te-doping concentration in Bi{sub 2}MoO{sub 6}, no detectable band-gap narrowing but more and more severe inhomogeneous lattice distortions were determined. The activity of Bi{sub 2}MoO{sub 6} photocatalyst was evaluated through methylene blue degradation under visible light irradiation (λ>410 nm) and was greatly enhanced by Te-doping. When Te-doped Bi{sub 2}MoO{sub 6} was synthesized at Te/Mo molar ratio of 7.5%, a maximum first-order rate constant of methylene blue degradation was obtained. The inhomogeneous lattice distortion generated an internal dipole moment, and the holes generated with the substitution of Te{sup 4+} to Mo{sup 6+} acted as the capturing centers of photogenerated electrons, thus the effective separation of photogenerated carriers was facilitated to result in a relatively high concentration of holes on the surface of Te-doped Bi{sub 2}MoO{sub 6} to be favorable for the efficient methylene blue degradation. - Graphical abstract: With the substitution of Te{sup 4+} to Mo{sup 6+}, effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability is achieved to be responsible for enhanced photocatalytic activity of Te-doped Bi{sub 2}MoO{sub 6}. - Highlights: • Nonmetal Te is incorporated into Bi{sub 2}MoO{sub 6} with the substitution of Te{sup 4+} to Mo{sup 6+}. • Revealing inhomogeneous lattice distortion and improved electron capturing ability. • Effective separation of photogenerated carriers in Te-doped Bi{sub 2}MoO{sub 6} is achieved. • The mechanism of methylene blue degradation over Te-doped Bi{sub 2}MoO{sub 6} is proposed.

  16. Arbitrarily shaped high-coherence electron bunches from cold atoms

    Science.gov (United States)

    McCulloch, A. J.; Sheludko, D. V.; Saliba, S. D.; Bell, S. C.; Junker, M.; Nugent, K. A.; Scholten, R. E.

    2011-10-01

    Ultrafast electron diffractive imaging of nanoscale objects such as biological molecules and defects in solid-state devices provides crucial information on structure and dynamic processes: for example, determination of the form and function of membrane proteins, vital for many key goals in modern biological science, including rational drug design. High brightness and high coherence are required to achieve the necessary spatial and temporal resolution, but have been limited by the thermal nature of conventional electron sources and by divergence due to repulsive interactions between the electrons, known as the Coulomb explosion. It has been shown that, if the electrons are shaped into ellipsoidal bunches with uniform density, the Coulomb explosion can be reversed using conventional optics, to deliver the maximum possible brightness at the target. Here we demonstrate arbitrary and real-time control of the shape of cold electron bunches extracted from laser-cooled atoms. The ability to dynamically shape the electron source itself and to observe this shape in the propagated electron bunch provides a remarkable experimental demonstration of the intrinsically high spatial coherence of a cold-atom electron source, and the potential for alleviation of electron-source brightness limitations due to Coulomb explosion.

  17. High-Power Electron Accelerators for Space (and other) Applications

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Dinh Cong [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Lewellen, John W. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-05-23

    This is a presentation on high-power electron accelerators for space and other applications. The main points covered are: electron beams for space applications, new designs of RF accelerators, high-power high-electron mobility transistors (HEMT) testing, and Li-ion battery design. In summary, the authors have considered a concept of 1-MeV electron accelerator that can operate up to several seconds. This concept can be extended to higher energy to produce higher beam power. Going to higher beam energy requires adding more cavities and solid-state HEMT RF power devices. The commercial HEMT have been tested for frequency response and RF output power (up to 420 W). Finally, the authors are testing these HEMT into a resonant load and planning for an electron beam test in FY17.

  18. Development of an electron gun for high power CW electron linac

    International Nuclear Information System (INIS)

    Yamazaki, Yoshio; Nomura, Masahiro

    1994-01-01

    An electron gun launching high average current beam has been designed for the high power CW electron linac at PNC. A peak electron beam current of 400mA with beam energy 200keV is required from the buncher design. However its average current is very high(duty factor 20%), a mesh grid is not able to be used for current control because of heating up or melting of grid. Furthermore, the beam current have to be variable up to 400mA to match with downstream modules, especially the accelerating guides including recirculating system. We employed the electron gun with two aperture grids to control beam current. The dimension of the electrodes, electron trajectory, the size of beam radius, and gun emittance was simulated by EGUN. (author)

  19. Highly n-Type Titanium Oxide as an Electronically Active Support for Platinum in the Catalytic Oxidation of Carbon Monoxide

    KAUST Repository

    Baker, L. Robert; Hervier, Antoine; Seo, Hyungtak; Kennedy, Griffin; Komvopoulos, Kyriakos; Somorjai, Gabor A.

    2011-01-01

    -support interaction is electronic activation of surface adsorbates by charge carriers. Motivated by the goal of using electronic activation to drive nonthermal chemistry, we investigated the ability of the oxide support to mediate charge transfer. We report

  20. Heat sinking of highly integrated photonic and electronic circuits

    NARCIS (Netherlands)

    van Rijn, M.B.J.; Smit, M.K.

    2017-01-01

    Dense integration of photonic and electronic circuits poses high requirements on thermal management. In this paper we present analysis of temperature distributions in PICs in InP membranes on top of a BiCMOS chip, which contain hot spots in both the photonic and the electronic layer (lasers, optical

  1. A high dutycycle low cost multichannel analyser for electron spectroscopy

    International Nuclear Information System (INIS)

    Norell, K.E.; Baltzer, P.

    1983-03-01

    A high dutycycle multichannel analyzer has been designed and used in time-of-flight electron spectroscopy. The memory capacity is 64k counts. The number of channels is 8192 with a time resolution of 100 ns. An oscilloscope is used to display the spectra synchronous with the counting. The unit has been built with standard electronic components. (author)

  2. Electron-optical design parameters for a high-resolution electron monochromator

    International Nuclear Information System (INIS)

    Tanaka, H.; Huebner, R.H.

    1976-01-01

    Detailed design parameters of a new, high-resolution electron monochromator are presented. The design utilizes a hemispherical filter as the energy-dispersing element and combines both cylindrical and aperture electrostatic lenses to accelerate, decelerate, transport, and focus the electron beam from the cathode to the interaction region

  3. High energy electron acceleration with PW-class laser system

    International Nuclear Information System (INIS)

    Nakanii, N.; Kondo, K.; Yabuuchi, T.; Tsuji, K.; Kimura, K.; Fukumochi, S.; Kashihara, M.; Tanimoto, T.; Nakamura, H.; Ishikura, T.; Kodama, R.; Mima, K.; Tanaka, K. A.; Mori, Y.; Miura, E.; Suzuki, S.; Asaka, T.; Yanagida, K.; Hanaki, H.; Kobayashi, T.

    2008-01-01

    We performed electron acceleration experiment with PW-class laser and a plasma tube, which was created by imploding a hollow polystyrene cylinder. In this experiment, electron energies in excess of 600 MeV have been observed. Moreover, the spectra of a comparatively high-density plasma ∼10 19 cm -3 had a bump around 10 MeV. Additionally, we performed the absolute sensitivity calibration of imaging plate for 1 GeV electrons from the injector Linac of Spring-8 in order to evaluate absolute number of GeV-class electrons in the laser acceleration experiment

  4. Evaluation of high-energy brachytherapy source electronic disequilibrium and dose from emitted electrons.

    Science.gov (United States)

    Ballester, Facundo; Granero, Domingo; Pérez-Calatayud, José; Melhus, Christopher S; Rivard, Mark J

    2009-09-01

    The region of electronic disequilibrium near photon-emitting brachytherapy sources of high-energy radionuclides (60Co, 137CS, 192Ir, and 169Yb) and contributions to total dose from emitted electrons were studied using the GEANT4 and PENELOPE Monte Carlo codes. Hypothetical sources with active and capsule materials mimicking those of actual sources but with spherical shape were examined. Dose contributions due to source photons, x rays, and bremsstrahlung; source beta-, Auger electrons, and internal conversion electrons; and water collisional kerma were scored. To determine if conclusions obtained for electronic equilibrium conditions and electron dose contribution to total dose for the representative spherical sources could be applied to actual sources, the 192Ir mHDR-v2 source model (Nucletron B.V., Veenendaal, The Netherlands) was simulated for comparison to spherical source results and to published data. Electronic equilibrium within 1% is reached for 60Co, 137CS, 192Ir, and 169Yb at distances greater than 7, 3.5, 2, and 1 mm from the source center, respectively, in agreement with other published studies. At 1 mm from the source center, the electron contributions to total dose are 1.9% and 9.4% for 60Co and 192Ir, respectively. Electron emissions become important (i.e., > 0.5%) within 3.3 mm of 60Co and 1.7 mm of 192Ir sources, yet are negligible over all distances for 137Cs and 169Yb. Electronic equilibrium conditions along the transversal source axis for the mHDR-v2 source are comparable to those of the spherical sources while electron dose to total dose contribution are quite different. Electronic equilibrium conditions obtained for spherical sources could be generalized to actual sources while electron contribution to total dose depends strongly on source dimensions, material composition, and electron spectra.

  5. Magnetic dipole self-organization of charge carriers in high-temperature superconductors and kinetics of phase transformation

    CERN Document Server

    Voronov, A V; Shuvalov, V V

    2001-01-01

    The phenomenological model, describing the magnetic dipole self-organization of charge carriers (formation of so-called stripe-structures and energy gap in the states spectrum), is designed for interpreting the data on the nonstationary nonlinear spectroscopy of the high-temperature superconductors. It is shown that after fast heating of the superconducting sample the kinetics of the subsequent phase transition depends on the initial temperature T. The destruction of the stripe-structures at low overheating T* < T < T sub m approx = (1.4-1.5)T*, whereby T sub c and T* approx = T sub c are the temperatures of transition into the superconducting state and formation of the stripe-structures occurs slowly (the times above 10 sup - sup 9 s) in spite of practically instantaneous disappearance of the superconductivity

  6. Technical Training: ELEC-2005: Electronics in High Energy Physics

    CERN Multimedia

    Monique Duval

    2005-01-01

    CERN Technical Training 2005: Learning for the LHC! ELEC-2005: Electronics in High Energy Physics - Spring Term ELEC-2005 is a new course series on modern electronics, given by CERN physicists and engineers within the framework of the 2005 Technical Training Programme, in an extended format of the successful ELEC-2002 course series. This comprehensive course series is designed for people who are not electronics specialists, for example physicists, engineers and technicians working at or visiting the laboratory, who use or will use electronics in their present or future activities, in particular in the context of the LHC accelerator and experiments. ELEC-2005 is composed of four Terms: the Winter Term, Introduction to electronics in HEP, already took place; the next three Terms will run throughout the year: Spring Term: Integrated circuits and VLSI technology for physics (March, 6 lectures) - now open for registration Summer Term: System electronics for physics: Issues (May, 7 lectures) Autumn Term: Ele...

  7. In Vivo Biological Evaluation of High Molecular Weight Multifunctional Acid-Degradable Polymeric Drug Carriers with Structurally Different Ketals.

    Science.gov (United States)

    Shenoi, Rajesh A; Abbina, Srinivas; Kizhakkedathu, Jayachandran N

    2016-11-14

    Understanding the influence of degradable chemical moieties on in vivo degradation, tissue distribution, and excretion is critical for the design of novel biodegradable drug carriers. Polyketals have recently emerged as a promising therapeutic delivery platform due to their ability to degrade under mild acidic intracellular compartments and generation of nontoxic degradation products. However, the effect of chemical structure of the ketal groups on the in vivo degradation, biodistribution, and pharmacokinetics of water-soluble ketal-containing polymers has not been explored. In the present work, we synthesized high molecular weight, water-soluble biodegradable hyperbranched polyglycerols (BHPGs) through the incorporation of structurally different ketal groups into the main chain of highly biocompatible polyglycerols. BHPGs showed pH and ketal group structure dependent degradation in buffer solutions. When the polymers were intravenously administered in mice, a strong dependence of in vivo degradation, biodistribution, and clearance on the ketal group structure was observed. All the BHPGs demonstrated degradation and clearance in vivo, with minimal tissue accumulation. Interestingly, an unanticipated degradation behavior of BHPGs with structurally different ketal groups was observed in vivo in comparison to their degradation in buffer solutions. BHPGs with cyclohexyl ketal (CHK) and cyclopentyl ketal (CPK) groups degraded much faster and were cleared from circulation much rapidly, while BHPG with glycerol hydroxy butanone ketal (GHBK) group degraded at a much slower rate and exhibited similar plasma half-life as that of nondegradable HPG. BHPG-GHBK also showed significantly lower tissue accumulation than nondegradable HPG after 30 days of administration. The difference in in vivo degradation may be attributed to the difference in hydrophobic characteristics of different ketal containing polymers, which may change their interaction with proteins and cells in vivo

  8. Development techniques and electron optical studies of high voltage, high current electron guns

    International Nuclear Information System (INIS)

    Rangarajan, L.M.; Mahadevan, S.; Ramamurthi, S.S.

    1992-01-01

    The progress of the electron gun design, limiting to axially symmetric geometries is discussed here with a view to utilise such guns for electron accelerators. The mechanical design features leading to the physical configuration of the gun with stringent tolerances are outlined. Vacuum processing is done at pressures of 1.3x10 -5 Pa. The gun employs W-filament emitter or a cathode pellet with bombarder service. A water cooled compact faraday cup is used to measure the electron current. Electron gun geometries have been studied using the computer programme. The preveance of the gun is 0.7x10 -7 A/Vsup(1.5) at 80 kV. Developmental techniques of such pulsed electron guns are described. (author). 7 refs., 5 figs

  9. Involvement of formate as an interspecies electron carrier in a syntrophic acetate-oxidizing anaerobic microorganism in coculture with methanogens.

    Science.gov (United States)

    Hattori, S; Luo, H; Shoun, H; Kamagata, Y

    2001-01-01

    To determine whether formate is involved in interspecies electron transfer between substrate-oxidizing bacteria and hydrogenotrophic microorganisms under anaerobic conditions, a syntrophic acetate-oxidizing bacterium Thermacetogenium phaeum strain PB was cocultured either with a formate /H2-utilizing methanogen strain TM (designated as PB/TM coculture), or an H2-utilizing methanogen strain deltaH (designated as PB/deltaH coculture). Acetate oxidation and subsequent methanogenesis in PB/TM coculture were found to be significantly faster than in PB/deltaH coculture. Formate dehydrogenase and hydrogenase were both detected in strains PB and TM. H2 partial pressures in the PB/TM coculture were kept lower (20 to 40 Pa) than those of the PB/deltaH coculture (40 to 60 Pa) during the exponential growth phase. Formate was also detected in both PB/TM and PB/deltaH cocultures, and the concentration of formate was maintained at a lower level in the PB/TM coculture (5 to 9 microM) than in the PB/deltaH coculture. Thermodynamic calculations revealed that the concentrations of both H2 and formate severely affect the syntrophic oxidation of acetate. These results strongly indicate that not only H2 but also formate may be involved in interspecies electron transfer.

  10. Secondary electron spectroscopy and Auger microscopy at high spatial resolution. Application to scanning electron microscopy

    International Nuclear Information System (INIS)

    Le Gressus, Claude; Massignon, Daniel; Sopizet, Rene

    1979-01-01

    Secondary electron spectroscopy (SES), Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS) are combined with ultra high vacuum scanning microscopy (SEM) for surface analysis at high spatial resolution. Reliability tests for the optical column for the vacuum and for the spectrometer are discussed. Furthermore the sensitivity threshold in AES which is compatible with a non destructive surface analysis at high spatial resolution is evaluated. This combination of all spectroscopies is used in the study of the beam damage correlated with the well known secondary electron image (SEI) darkening still observed in ultra high vacuum. The darkening is explained as a bulk decontamination of the sample rather than as a surface contamination from the residual vacuum gas [fr

  11. Significant relaxation of residual negative carrier in polar Alq3 film directly detected by high-sensitivity photoemission

    Science.gov (United States)

    Kinjo, Hiroumi; Lim, Hyunsoo; Sato, Tomoya; Noguchi, Yutaka; Nakayama, Yasuo; Ishii, Hisao

    2016-02-01

    Tris(8-hydroxyquinoline)aluminum (Alq3) has been widely applied as a good electron-injecting layer (EIL) in organic light-emitting diodes. High-sensitivity photoemission measurement revealed a clear photoemission by visible light, although its ionization energy is 5.7 eV. This unusual photoemission is ascribed to Alq3 anions captured by positive polarization charges. The observed electron detachment energy of the anion was about 1 eV larger than the electron affinity reported by inverse photoemission. This difference suggests that the injected electron in the Alq3 layer is energetically relaxed, leading to the reduction in injection barrier. This nature is one of the reasons why Alq3 worked well as the EIL.

  12. Treatment of basal cell epithelioma with high energy electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Ogawa, Y. (Hyogo-ken Cancer Center, Kobe (Japan)); Kumano, M.; Kumano, K.

    1981-11-01

    Thirty patients with basal cell epithelioma received high energy electron beam therapy. They were irradiated with a dose ranging from 4,800 rad (24 fractions, 35 days) to 12,000 rad (40 fractions, 57 days). Tumors disappeared in all cases. These were no disease-related deaths; in one patient there was recurrence after 2 years. We conclude that radiotherapy with high energy electron beam is very effective in the treatment of basal cell epithelioma.

  13. New initiatives for producing high current electron accelerators

    International Nuclear Information System (INIS)

    Faehl, R.J.; Keinigs, R.K.; Pogue, E.W.

    1996-01-01

    New classes of compact electron accelerators able to deliver multi-kiloamperes of pulsed 10-50 MeV electron beams are being studied. One class is based upon rf linac technology with dielectric-filled cavities. For materials with ε/ε o >>1, the greatly increased energy storage permits high current operation. The second type is a high energy injected betatron. Circulating current limits scale as Β 2 γ 3

  14. Optical Thermal Characterization Enables High-Performance Electronics Applications

    Energy Technology Data Exchange (ETDEWEB)

    2016-02-01

    NREL developed a modeling and experimental strategy to characterize thermal performance of materials. The technique provides critical data on thermal properties with relevance for electronics packaging applications. Thermal contact resistance and bulk thermal conductivity were characterized for new high-performance materials such as thermoplastics, boron-nitride nanosheets, copper nanowires, and atomically bonded layers. The technique is an important tool for developing designs and materials that enable power electronics packaging with small footprint, high power density, and low cost for numerous applications.

  15. High harmonic terahertz confocal gyrotron with nonuniform electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Wenjie; Guan, Xiaotong; Yan, Yang [THz Research Center, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2016-01-15

    The harmonic confocal gyrotron with nonuniform electron beam is proposed in this paper in order to develop compact and high power terahertz radiation source. A 0.56 THz third harmonic confocal gyrotron with a dual arc section nonuniform electron beam has been designed and investigated. The studies show that confocal cavity has extremely low mode density, and has great advantage to operate at high harmonic. Nonuniform electron beam is an approach to improve output power and interaction efficiency of confocal gyrotron. A dual arc beam magnetron injection gun for designed confocal gyrotron has been developed and presented in this paper.

  16. Survey of potential electronic applications of high temperature superconductors

    International Nuclear Information System (INIS)

    Hammond, R.B.; Bourne, L.C.

    1991-01-01

    In this paper the authors present a survey of the potential electronic applications of high temperature superconductor (HTSC) thin films. During the past four years there has been substantial speculation on this topic. The authors will cover only a small fraction of the potential electronic applications that have been identified. Their treatment is influenced by the developments over the past few years in materials and device development and in market analysis. They present their view of the most promising potential applications. Superconductors have two important properties that make them attractive for electronic applications. These are (a) low surface resistance at high frequencies, and (b) the Josephson effect

  17. High-voltage pulse generator for electron gun power supply

    International Nuclear Information System (INIS)

    Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

    1987-01-01

    High-voltage pulse generator with combined capacitive and inductive energy storages for electron gun power supply is described. Hydrogen thyratron set in a short magnetic lense is a current breaker. Times of current interruption in thyratrons are in the range from 100 to 300 ns. With 1 kV charging voltage of capacitive energy storage 25 kV voltage pulse is obtained in the load. The given high-voltage pulse generator was used for supply of an electron gun generating 10-30 keV low-energy electron beam

  18. Impact of electron-electron Coulomb interaction on the high harmonic generation process in graphene

    Science.gov (United States)

    Avetissian, H. K.; Mkrtchian, G. F.

    2018-03-01

    Generation of high harmonics in a monolayer graphene initiated by a strong coherent radiation field, taking into account electron-electron Coulomb interaction, is investigated. A microscopic theory describing the nonlinear optical response of graphene is developed. The Coulomb interaction of electrons is treated in the scope of dynamic Hartree-Fock approximation. The closed set of integrodifferential equations for the single-particle density matrix of a graphene quantum structure is solved numerically. The obtained solutions show the significance of many-body Coulomb interaction on the high harmonic generation process in graphene.

  19. Production of high quality sodium iodide preparations labelled with carrier free iodine-125

    International Nuclear Information System (INIS)

    Abdukayumov, M.N.; Chistyakov, P.G.; Shilin, E.A.

    2001-01-01

    Work is related to the problem of high-quality Sodium Iodide preparation production and to the choice of the peptids iodination methods with the purpose of control test developing to determine the Biological activity of the above mentioned preparation

  20. Studies on the high electronic energy deposition in polyaniline thin films

    International Nuclear Information System (INIS)

    Deshpande, N.G.; Gudage, Y.G.; Vyas, J.C.; Singh, F.; Sharma, Ramphal

    2008-01-01

    We report here the physico-chemical changes brought about by high electronic energy deposition of gold ions in HCl doped polyaniline (PANI) thin films. PANI thin films were synthesized by in situ polymerization technique. The as-synthesized PANI thin films of thickness 160 nm were irradiated using Au 7+ ion of 100 MeV energy at different fluences, namely, 5 x 10 11 ions/cm 2 and 5 x 10 12 ions/cm 2 , respectively. A significant change was seen after irradiation in electrical and photo conductivity, which may be related to increased carrier concentration, and structural modifications in the polymer film. In addition, the high electronic energy deposition showed other effects like cross-linking of polymer chains, bond breaking and creation of defect sites. AFM observations revealed mountainous type features in all (before and after irradiation) PANI samples. The average size (diameter) and density of such mountainous clusters were found to be related with the ion fluence. The AFM profiles also showed change in the surface roughness of the films with respect to irradiation, which is one of the peculiarity of the high electronic energy deposition technique

  1. Superlattice assembly of graphene oxide (GO) and titania nanosheets: fabrication, in situ photocatalytic reduction of GO and highly improved carrier transport

    Science.gov (United States)

    Cai, Xingke; Ma, Renzhi; Ozawa, Tadashi C.; Sakai, Nobuyuki; Funatsu, Asami; Sasaki, Takayoshi

    2014-11-01

    Two different kinds of two-dimensional (2D) materials, graphene oxide (GO) and titanium oxide nanosheets (Ti0.87O20.52-), were self-assembled layer-by-layer using a polycation as a linker into a superlattice film. Successful construction of an alternate molecular assembly was confirmed by atomic force microscopy and UV-visible absorption spectroscopy as well as X-ray diffraction analysis. Exposure of the resulting film to UV light effectively promoted photocatalytic reduction of GO as well as decomposition of the polycation, which are due to their intimate molecular-level contact. The reduction completed within 3 hours, bringing about a decrease of the sheet resistance by ~106. This process provides a clean and mild route to reduced graphene oxide (rGO), showing advantages over other chemical and thermal reduction processes. A field-effect-transistor device was fabricated using the resulting superlattice assembly of rGO/Ti0.87O20.52- as a channel material. The rGO in the film was found to work as a unipolar n-type conductor, which is in contrast to ambipolar or unipolar p-type behavior mostly reported for rGO films. This unique property may be associated with the electron doping effect from Ti0.87O20.52- nanosheets. A significant improvement in the conductance and electron carrier mobility by more than one order of magnitude was revealed, which may be accounted for by the heteroassembly with Ti0.87O20.52- nanosheets with a high dielectric constant as well as the better 2D structure of rGO produced via the soft photocatalytic reduction.Two different kinds of two-dimensional (2D) materials, graphene oxide (GO) and titanium oxide nanosheets (Ti0.87O20.52-), were self-assembled layer-by-layer using a polycation as a linker into a superlattice film. Successful construction of an alternate molecular assembly was confirmed by atomic force microscopy and UV-visible absorption spectroscopy as well as X-ray diffraction analysis. Exposure of the resulting film to UV light

  2. High energy gain electron beam acceleration by 100TW laser

    International Nuclear Information System (INIS)

    Kotaki, Hideyuki; Kando, Masaki; Kondo, Shuji; Hosokai, Tomonao; Kanazawa, Shuhei; Yokoyama, Takashi; Matoba, Toru; Nakajima, Kazuhisa

    2001-01-01

    A laser wakefield acceleration experiment using a 100TW laser is planed at JAERI-Kansai. High quality and short pulse electron beams are necessary to accelerate the electron beam by the laser. Electron beam - laser synchronization is also necessary. A microtron with a photocathode rf-gun was prepared as a high quality electron injector. The quantum efficiency (QE) of the photocathode of 2x10 -5 was obtained. A charge of 100pC from the microtron was measured. The emittance and pulse width of the electron beam was 6π mm-mrad and 10ps, respectively. In order to produce a short pulse electron beam, and to synchronize between the electron beam and the laser pulse, an inverse free electron laser (IFEL) is planned. One of problems of LWFA is the short acceleration length. In order to overcome the problem, a Z-pinch plasma waveguide will be prepared as a laser wakefield acceleration tube for 1 GeV acceleration. (author)

  3. Ectopic High Expression of E2-EPF Ubiquitin Carrier Protein Indicates a More Unfavorable Prognosis in Brain Glioma.

    Science.gov (United States)

    Zhang, Xiaohui; Zhao, Fangbo; Zhang, Shujun; Song, Yichun

    2017-04-01

    Ubiquitination of proteins meant for elimination is a primary method of eukaryotic cellular protein degradation. The ubiquitin carrier protein E2-EPF is a key degradation enzyme that is highly expressed in many tumors. However, its expression and prognostic significance in brain glioma are still unclear. The aim of this study was to reveal how the level of E2-EPF relates to prognosis in brain glioma. Thirty low-grade and 30 high-grade brain glioma samples were divided into two tissue microarrays each. Levels of E2-EPF protein were examined by immunohistochemistry and immunofluorescence. Quantitative real-time polymerase chain reaction was used to analyze the level of E2-EPF in 60 glioma and 3 normal brain tissue samples. The relationship between E2-EPF levels and prognosis was analyzed by Kaplan-Meier survival curves. E2-EPF levels were low in normal brain tissue samples but high in glioma nuclei. E2-EPF levels gradually increased as glioma grade increased (p EPF levels in high-grade glioma were significantly higher than in low-grade glioma (p EPF levels was shorter than in patients with low expression (p EPF was significantly shorter than patients with only nuclear E2-EPF (p EPF levels, especially ectopic, are associated with higher grade glioma and shorter survival. E2-EPF levels may play a key role in predicting the prognosis for patients with brain glioma.

  4. Experiences of a High-Risk Population with Prenatal Hemoglobinopathy Carrier Screening in a Primary Care Setting: a Qualitative Study

    NARCIS (Netherlands)

    Holtkamp, Kim C. A.; Lakeman, Phillis; Hader, Hind; Jans, Suze M. J. P.; Hoenderdos, Maria; Playfair, Henna A. M.; Cornel, Martina C.; Peters, Marjolein; Henneman, Lidewij

    2017-01-01

    Carrier screening for hemoglobinopathies (HbPs; sickle cell disease and thalassemia) aims to facilitate autonomous reproductive decision-making. In the absence of a Dutch national HbP carrier screening program, some primary care midwives offer screening on an ad hoc basis. This qualitative

  5. Temporal and spatial distribution of high energy electrons at Jupiter

    Science.gov (United States)

    Jun, I.; Garrett, H. B.; Ratliff, J. M.

    2003-04-01

    Measurements of the high energy, omni-directional electron environment by the Galileo spacecraft Energetic Particle Detector (EPD) were used to study the high energy electron environment in the Jovian magnetosphere, especially in the region between 8 to 18 Rj (1 Rj = 1 Jovian radius = 71,400 km). 10-minute averages of the EPD data collected between Jupiter orbit insertion (JOI) in 1995 and the orbit number 33 (I33) in 2002 form an extensive dataset, which has been extremely useful to observe temporal and spatial variability of the Jovian high energy electron environment. The count rates of the EPD electron channels (0.174, 0.304, 0.527, 1.5, 2.0, and 11 MeV) were grouped into 0.5 Rj or 0.5 L bins and analyzed statistically. The results indicate that: (1) a log-normal Gaussian distribution well describes the statistics of the high energy electron environment (for example, electron differential fluxes) in the Jovian magnetosphere, in the region studied here; (2) the high energy electron environments inferred by the Galileo EPD measurements are in a close agreement with the data obtained using the Divine model, which was developed more than 30 years ago from Pioneer 10, 11 and Voyager 1, 2 data; (3) the data are better organized when plotted against magnetic radial parameter L than Rj; (4) the standard deviations of the 0.174, 0.304, 0.527 MeV channel count rates are larger than those of the 1.5, 2.0, 11 MeV count rates in 12 Rj. These observations are very helpful to understand short- and long-term, and local variability of the Jovian high energy electron environment, and are discussed in detail.

  6. Development of a high power free-electron laser

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Min; Lee, Byung Chul; Kim, Sun Kook; Jung, Yung Wook; Cho, Sung Oh [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1995-01-01

    A millimeter-wave free electron laser (FEL) driven by a recirculating electrostatic accelerator has been developed. The wavelength of the FEL is tunable in the range of 3 - 12 mm by tuning the energy of the electron beam. The output power is estimated to be 1 kW. The electrostatic accelerator is composed of high-current electron gun, acceleration tube, high-voltage generator, high-voltage terminal, deceleration tube, electron collator, and vacuum pumps. Two types of LaB{sub 6}-based thermionic electron guns (triode gun and diode gun) and their power supplies have been developed. The voltage of the guns is 30 kV and the output current is - 2 A. A beam-focusing planar undulator and a permanent-magnet helical undulator have been developed and 3D trajectories of electron beam in the undulators have been calculated to find optimal input condition of electron beam. 135 figs, 15 pix, 17 tabs, 98 refs. (Author).

  7. Development of a high power free-electron laser

    International Nuclear Information System (INIS)

    Lee, Jong Min; Lee, Byung Chul; Kim, Sun Kook; Jung, Yung Wook; Cho, Sung Oh

    1995-01-01

    A millimeter-wave free electron laser (FEL) driven by a recirculating electrostatic accelerator has been developed. The wavelength of the FEL is tunable in the range of 3 - 12 mm by tuning the energy of the electron beam. The output power is estimated to be 1 kW. The electrostatic accelerator is composed of high-current electron gun, acceleration tube, high-voltage generator, high-voltage terminal, deceleration tube, electron collator, and vacuum pumps. Two types of LaB 6 -based thermionic electron guns (triode gun and diode gun) and their power supplies have been developed. The voltage of the guns is 30 kV and the output current is - 2 A. A beam-focusing planar undulator and a permanent-magnet helical undulator have been developed and 3D trajectories of electron beam in the undulators have been calculated to find optimal input condition of electron beam. 135 figs, 15 pix, 17 tabs, 98 refs. (Author)

  8. High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

    Directory of Open Access Journals (Sweden)

    Graham Trevor Reed

    2014-12-01

    Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

  9. Electron transfer and decay processes of highly charged iodine ions

    International Nuclear Information System (INIS)

    Sakaue, Hiroyuki A.; Danjo, Atsunori; Hosaka, Kazumoto

    2005-01-01

    In the present experimental work we have investigated multi-electron transfer processes in I q+ (q=10, 15, 20 and 25) + Ne, Ar, Kr and Xe collisions at 1.5q keV energy. The branching ratios between Auger and radiative decay channels have been measured in decay processes of multiply excited states formed by multi-electron transfer collisions. It has been shown that, in all the multi-electron transfer processes investigated, the Auger decays are far dominant over the radiative decay processes and the branching ratios are clearly characterized by the average principal quantum number of the initial excited states of projectile ions. We could express the branching ratios in high Rydberg states formed in multi-electron transfer processes by using the decay probability of one Auger electron emission. (author)

  10. Laboratory design for high-performance electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    O' Keefe, Michael A.; Turner, John H.; Hetherington, Crispin J.D.; Cullis, A.G.; Carragher, Bridget; Jenkins, Ron; Milgrim, Julie; Milligan,Ronald A.; Potter, Clinton S.; Allard, Lawrence F.; Blom, Douglas A.; Degenhardt, Lynn; Sides, William H.

    2004-04-23

    Proliferation of electron microscopes with field emission guns, imaging filters and hardware spherical aberration correctors (giving higher spatial and energy resolution) has resulted in the need to construct special laboratories. As resolutions improve, transmission electron microscopes (TEMs) and scanning transmission electron microscopes (STEMs) become more sensitive to ambient conditions. State-of-the-art electron microscopes require state-of-the-art environments, and this means careful design and implementation of microscope sites, from the microscope room to the building that surrounds it. Laboratories have been constructed to house high-sensitive instruments with resolutions ranging down to sub-Angstrom levels; we present the various design philosophies used for some of these laboratories and our experiences with them. Four facilities are described: the National Center for Electron Microscopy OAM Laboratory at LBNL; the FEGTEM Facility at the University of Sheffield; the Center for Integrative Molecular Biosciences at TSRI; and the Advanced Microscopy Laboratory at ORNL.

  11. TEMPO-Oxidized Nanofibrillated Cellulose as a High Density Carrier for Bioactive Molecules.

    Science.gov (United States)

    Weishaupt, Ramon; Siqueira, Gilberto; Schubert, Mark; Tingaut, Philippe; Maniura-Weber, Katharina; Zimmermann, Tanja; Thöny-Meyer, Linda; Faccio, Greta; Ihssen, Julian

    2015-11-09

    Controlled and efficient immobilization of specific biomolecules is a key technology to introduce new, favorable functions to materials suitable for biomedical applications. Here, we describe an innovative and efficient, two-step methodology for the stable immobilization of various biomolecules, including small peptides and enzymes onto TEMPO oxidized nanofibrillated cellulose (TO-NFC). The introduction of carboxylate groups to NFC by TEMPO oxidation provided a high surface density of negative charges able to drive the adsorption of biomolecules and take part in covalent cross-linking reactions with 1-ethyl-3-[3-(dimethylamino)propyl]carbodiimide (EDAC) and glutaraldehyde (Ga) chemistry. Up to 0.27 μmol of different biomolecules per mg of TO-NFC could be reversibly immobilized by electrostatic interaction. An additional chemical cross-linking step prevented desorption of more than 80% of these molecules. Using the cysteine-protease papain as model, a highly active papain-TO-NFC conjugate was achieved. Once papain was immobilized, 40% of the initial enzymatic activity was retained, with an increase in kcat from 213 to >700 s(-1) for the covalently immobilized enzymes. The methodology presented in this work expands the range of application for TO-NFC in the biomedical field by enabling well-defined hybrid biomaterials with a high density of functionalization.

  12. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, N G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Gudage, Y G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Ghosh, A [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Vyas, J C [Technical and Prototype Engineering Division, Bhabha Atomic Research Center, Trombay, Mumbai (MS) (India); Singh, F [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Tripathi, A [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India)

    2008-02-07

    We have examined the effect of swift heavy ions using 100 MeV Au{sup 8+} ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10{sup -4} {omega} cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications.

  13. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    International Nuclear Information System (INIS)

    Deshpande, N G; Gudage, Y G; Ghosh, A; Vyas, J C; Singh, F; Tripathi, A; Sharma, Ramphal

    2008-01-01

    We have examined the effect of swift heavy ions using 100 MeV Au 8+ ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10 -4 Ω cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications

  14. Two-dimensional n -InSe/p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

    Science.gov (United States)

    Xia, Cong-xin; Du, Juan; Huang, Xiao-wei; Xiao, Wen-bo; Xiong, Wen-qi; Wang, Tian-xing; Wei, Zhong-ming; Jia, Yu; Shi, Jun-jie; Li, Jing-bo

    2018-03-01

    Recently, constructing van der Waals (vdW) heterojunctions by stacking different two-dimensional (2D) materials has been considered to be effective strategy to obtain the desired properties. Here, through first-principles calculations, we find theoretically that the 2D n -InSe/p -GeSe(SnS) vdW heterojunctions are the direct-band-gap semiconductor with typical type-II band alignment, facilitating the effective separation of photogenerated electron and hole pairs. Moreover, they possess the high optical absorption strength (˜105 ), broad spectrum width, and excellent carrier mobility (˜103c m2V-1s-1 ). Interestingly, under the influences of the interlayer coupling and external electric field, the characteristics of type-II band alignment is robust, while the band-gap values and band offset are tunable. These results indicate that 2D n -InSe/p -GeSe(SnS) heterojunctions possess excellent optoelectronic and transport properties, and thus can become good candidates for next-generation optoelectronic nanodevices.

  15. Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

    Science.gov (United States)

    Vinattieri, A.; Batignani, F.; Bogani, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Zhu, D.; Humphreys, C. J.

    2014-02-01

    By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

  16. Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Vinattieri, A.; Batignani, F. [Dipartimento di Fisica e Astronomia, LENS, CNISM, Università di Firenze (Italy); Bogani, F. [Dipartimento di Ingegneria Industriale, Università di Firenze (Italy); Meneghini, M.; Meneghesso, G.; Zanoni, E. [Dipartimento di Ingegneria dell' Informazione, Università di Padova (Italy); Zhu, D.; Humphreys, C. J. [Department Materials Science, University of Cambridge, Cambridge, CB2 3QZ (United Kingdom)

    2014-02-21

    By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

  17. Electron capture by highly charged ions from surfaces and gases

    Energy Technology Data Exchange (ETDEWEB)

    Allen, F.

    2008-01-11

    In this study highly charged ions produced in Electron Beam Ion Traps are used to investigate electron capture from surfaces and gases. The experiments with gas targets focus on spectroscopic measurements of the K-shell x-rays emitted at the end of radiative cascades following electron capture into Rydberg states of Ar{sup 17+} and Ar{sup 18+} ions as a function of collision energy. The ions are extracted from an Electron Beam Ion Trap at an energy of 2 keVu{sup -1}, charge-selected and then decelerated down to 5 eVu{sup -1} for interaction with an argon gas target. For decreasing collision energies a shift to electron capture into low orbital angular momentum capture states is observed. Comparative measurements of the K-shell x-ray emission following electron capture by Ar{sup 17+} and Ar{sup 18+} ions from background gas in the trap are made and a discrepancy in the results compared with those from the extraction experiments is found. Possible explanations are discussed. For the investigation of electron capture from surfaces, highly charged ions are extracted from an Electron Beam Ion Trap at energies of 2 to 3 keVu{sup -1}, charge-selected and directed onto targets comprising arrays of nanoscale apertures in silicon nitride membranes. The highly charged ions implemented are Ar{sup 16+} and Xe{sup 44+} and the aperture targets are formed by focused ion beam drilling in combination with ion beam assisted thin film deposition, achieving hole diameters of 50 to 300 nm and aspect ratios of 1:5 to 3:2. After transport through the nanoscale apertures the ions pass through an electrostatic charge state analyzer and are detected. The percentage of electron capture from the aperture walls is found to be much lower than model predictions and the results are discussed in terms of a capillary guiding mechanism. (orig.)

  18. Electron capture by highly charged ions from surfaces and gases

    International Nuclear Information System (INIS)

    Allen, F.

    2008-01-01

    In this study highly charged ions produced in Electron Beam Ion Traps are used to investigate electron capture from surfaces and gases. The experiments with gas targets focus on spectroscopic measurements of the K-shell x-rays emitted at the end of radiative cascades following electron capture into Rydberg states of Ar 17+ and Ar 18+ ions as a function of collision energy. The ions are extracted from an Electron Beam Ion Trap at an energy of 2 keVu -1 , charge-selected and then decelerated down to 5 eVu -1 for interaction with an argon gas target. For decreasing collision energies a shift to electron capture into low orbital angular momentum capture states is observed. Comparative measurements of the K-shell x-ray emission following electron capture by Ar 17+ and Ar 18+ ions from background gas in the trap are made and a discrepancy in the results compared with those from the extraction experiments is found. Possible explanations are discussed. For the investigation of electron capture from surfaces, highly charged ions are extracted from an Electron Beam Ion Trap at energies of 2 to 3 keVu -1 , charge-selected and directed onto targets comprising arrays of nanoscale apertures in silicon nitride membranes. The highly charged ions implemented are Ar 16+ and Xe 44+ and the aperture targets are formed by focused ion beam drilling in combination with ion beam assisted thin film deposition, achieving hole diameters of 50 to 300 nm and aspect ratios of 1:5 to 3:2. After transport through the nanoscale apertures the ions pass through an electrostatic charge state analyzer and are detected. The percentage of electron capture from the aperture walls is found to be much lower than model predictions and the results are discussed in terms of a capillary guiding mechanism. (orig.)

  19. Evolution of electronic structure in highly charge doped MoS2 compounds

    Science.gov (United States)

    Bin Subhan, Mohammed; Watson, Matthew; Liu, Zhongkai; Walters, Andrew; Hoesch, Moritz; Howard, Chris; Diamond I05 beamline Collaboration

    Transition-metal dichalcogenides (TMDCs) are a group of layered materials that exhibit a rich array of electronic ground states including semiconductivity, metallicity, superconductivity and charge density waves. In recent years, 2D TMDCs have attracted considerable attention due to their unique properties and potential applications in optoelectronics. It has been shown that the charge carrier density in few layer MoS2 can be tunably increased via electrostatic gating. At high levels of doping, MoS2 exhibits superconductivity with a dome-like dependence of Tc on doping analogous to that found in the cuprate superconductors. High doping can also be achieved via intercalation of alkali metals in bulk MoS2. The origin of this superconductivity is not yet fully understood with predictions ranging from exotic pairing mechanisms in bulk systems to Ising superconductivity in single layers. Despite these interesting properties, there has been limited research to date on the electronic structure of these doped compounds. Here we present our work on alkali metal intercalated MoS2 using the low temperature metal ammonia solution method. Using X-ray diffraction, Raman spectroscopy and ARPES measurements we will discuss the physical and electronic structure of these materials. EPSRC, Diamond Light Source.

  20. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  1. Ultra high energy electrons powered by pulsar rotation.

    Science.gov (United States)

    Mahajan, Swadesh; Machabeli, George; Osmanov, Zaza; Chkheidze, Nino

    2013-01-01

    A new mechanism of particle acceleration, driven by the rotational slow down of the Crab pulsar, is explored. The rotation, through the time dependent centrifugal force, can efficiently excite unstable Langmuir waves in the electron-positron (hereafter e(±)) plasma of the star magnetosphere. These waves, then, Landau damp on electrons accelerating them in the process. The net transfer of energy is optimal when the wave growth and the Landau damping times are comparable and are both very short compared to the star rotation time. We show, by detailed calculations, that these are precisely the conditions for the parameters of the Crab pulsar. This highly efficient route for energy transfer allows the electrons in the primary beam to be catapulted to multiple TeV (~ 100 TeV) and even PeV energy domain. It is expected that the proposed mechanism may, unravel the puzzle of the origin of ultra high energy cosmic ray electrons.

  2. Toward a suitable structural analysis of gene delivery carrier based on polycationic carbohydrates by electron transfer dissociation tandem mass spectrometry

    International Nuclear Information System (INIS)

    Przybylski, Cédric; Benito, Juan M.; Bonnet, Véronique; Mellet, Carmen Ortiz; García Fernández, José M.

    2016-01-01

    Polycationic carbohydrates represent an attractive class of biomolecules for several applications and particularly as non viral gene delivery vectors. In this case, the establishment of structure-biological activity relationship requires sensitive and accurate characterization tools to both control and achieve fine structural deciphering. Electrospray-tandem mass spectrometry (ESI-MS/MS) appears as a suitable approach to address these questions. In the study herein, we have investigated the usefulness of electron transfer dissociation (ETD) to get structural data about five polycationic carbohydrates demonstrated as promising gene delivery agents. A particular attention was paid to determine the influence of charge states as well as both fluoranthene reaction time and supplementary activation (SA) on production of charge reduced species, fragmentation yield, varying from 2 to 62%, as well as to obtain the most higher both diversity and intensity of fragments, according to charge states and targeted compounds. ETD fragmentation appeared to be mainly directed toward pending group rather than carbohydrate cyclic scaffold leading to a partial sequencing for building blocks when amino groups are close to carbohydrate core, but allowing to complete structural deciphering of some of them, such as those including dithioureidocysteaminyl group which was not possible with CID only. Such findings clearly highlight the potential to help the rational choice of the suitable analytical conditions, according to the nature of the gene delivery molecules exhibiting polycationic features. Moreover, our ETD-MS/MS approach open the way to a fine sequencing/identification of grafted groups carried on various sets of oligo-/polysaccharides in various fields such as glycobiology or nanomaterials, even with unknown or questionable extraction, synthesis or modification steps. - Highlights: • The first ETD-MS/MS characterization of polycationic carbohydrate based non-viral gene delivery

  3. Toward a suitable structural analysis of gene delivery carrier based on polycationic carbohydrates by electron transfer dissociation tandem mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Przybylski, Cédric, E-mail: cedric.przybylski@upmc.fr [Université d’Evry-Val-d’Essonne, Laboratoire Analyse et Modélisation pour la Biologie et l’Environnement, CNRS UMR 8587, Bâtiment Maupertuis, Bld F. Mitterrand, F-91025 Evry (France); Benito, Juan M. [Instituto de Investigaciones Químicas (IIQ), CSIC−Universidad de Sevilla, Américo Vespucio 49, Isla de la Cartuja, E-41092 Sevilla (Spain); Bonnet, Véronique [Université de Picardie Jules Verne, Laboratoire de Glycochimie, des Antimicrobiens et des Agroressources, CNRS UMR 7378, 80039 Amiens (France); Mellet, Carmen Ortiz [Departamento de Química Orgánica, Facultad de Química, Universidad de Sevilla, E-41012 Sevilla (Spain); García Fernández, José M. [Instituto de Investigaciones Químicas (IIQ), CSIC−Universidad de Sevilla, Américo Vespucio 49, Isla de la Cartuja, E-41092 Sevilla (Spain)

    2016-12-15

    Polycationic carbohydrates represent an attractive class of biomolecules for several applications and particularly as non viral gene delivery vectors. In this case, the establishment of structure-biological activity relationship requires sensitive and accurate characterization tools to both control and achieve fine structural deciphering. Electrospray-tandem mass spectrometry (ESI-MS/MS) appears as a suitable approach to address these questions. In the study herein, we have investigated the usefulness of electron transfer dissociation (ETD) to get structural data about five polycationic carbohydrates demonstrated as promising gene delivery agents. A particular attention was paid to determine the influence of charge states as well as both fluoranthene reaction time and supplementary activation (SA) on production of charge reduced species, fragmentation yield, varying from 2 to 62%, as well as to obtain the most higher both diversity and intensity of fragments, according to charge states and targeted compounds. ETD fragmentation appeared to be mainly directed toward pending group rather than carbohydrate cyclic scaffold leading to a partial sequencing for building blocks when amino groups are close to carbohydrate core, but allowing to complete structural deciphering of some of them, such as those including dithioureidocysteaminyl group which was not possible with CID only. Such findings clearly highlight the potential to help the rational choice of the suitable analytical conditions, according to the nature of the gene delivery molecules exhibiting polycationic features. Moreover, our ETD-MS/MS approach open the way to a fine sequencing/identification of grafted groups carried on various sets of oligo-/polysaccharides in various fields such as glycobiology or nanomaterials, even with unknown or questionable extraction, synthesis or modification steps. - Highlights: • The first ETD-MS/MS characterization of polycationic carbohydrate based non-viral gene delivery

  4. Ion induced high energy electron emission from copper

    Energy Technology Data Exchange (ETDEWEB)

    Ruano, G. [Instituto de Desarrollo Tecnologico para la Industria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina)], E-mail: gdruano@ceride.gov.ar; Ferron, J. [Instituto de Desarrollo Tecnologico para la Industria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina); Departamento de Ingenieria de Materiales, Facultad de Ingenieria Quimica, Consejo Nacional de Investigaciones Cientificas y Tecnicas and Universidad Nacional del Litoral Gueemes 3450 CC 91, 3000 Santa Fe (Argentina)

    2008-11-15

    We present measurements of secondary electron emission from Cu induced by low energy bombardment (1-5 keV) of noble gas (He{sup +}, Ne{sup +} and Ar{sup +}) and Li{sup +} ions. We identify different potential and kinetic mechanisms and find the presence of high energetic secondary electrons for a couple of ion-target combinations. In order to understand the presence of these fast electrons we need to consider the Fermi shuttle mechanism and the different ion neutralization efficiencies.

  5. Proposal to detect an emission of unusual super-high energy electrons in electron storage rings

    Directory of Open Access Journals (Sweden)

    Da-peng Qian

    2014-01-01

    Full Text Available According to an extended Lorentz–Einstein mass formula taken into the uncertainty principle, it is predicted that the electron beams passing accelerating electric field should with a small probability generate abnormal super-high energy electrons which are much higher than the beam energy. Author’s preliminary experiment result at electron storage ring has hinted these signs, so suggests to more strictly detect this unusual phenomenon, and thus to test the extended mass formula as well as a more perfect special relativity.

  6. Electron Acceleration by High Power Radio Waves in the Ionosphere

    Science.gov (United States)

    Bernhardt, Paul

    2012-10-01

    At the highest ERP of the High Altitude Auroral Research Program (HAARP) facility in Alaska, high frequency (HF) electromagnetic (EM) waves in the ionosphere produce artificial aurora and electron-ion plasma layers. Using HAARP, electrons are accelerated by high power electrostatic (ES) waves to energies >100 times the thermal temperature of the ambient plasma. These ES waves are driven by decay of the pump EM wave tuned to plasma resonances. The most efficient acceleration process occurs near the harmonics of the electron cyclotron frequency in earth's magnetic field. Mode conversion plays a role in transforming the ES waves into EM signals that are recorded with ground receivers. These diagnostic waves, called stimulated EM emissions (SEE), show unique resonant signatures of the strongest electron acceleration. This SEE also provides clues about the ES waves responsible for electron acceleration. The electron gas is accelerated by high frequency modes including Langmuir (electron plasma), upper hybrid, and electron Bernstein waves. All of these waves have been identified in the scattered EM spectra as downshifted sidebands of the EM pump frequency. Parametric decay is responsible low frequency companion modes such as ion acoustic, lower hybrid, and ion Bernstein waves. The temporal evolution of the scattered EM spectrum indicates development of field aligned irregularities that aid the mode conversion process. The onset of certain spectral features is strongly correlated with glow plasma discharge structures that are both visible with the unaided eye and detectable using radio backscatter techniques at HF and UHF frequencies. The primary goals are to understand natural plasma layers, to study basic plasma physics in a unique ``laboratory with walls,'' and to create artificial plasma structures that can aid radio communications.

  7. Electron-cloud effects in high-luminosity colliders

    Energy Technology Data Exchange (ETDEWEB)

    Zimmermann, F.

    1998-01-01

    Electron-cloud instabilities are expected to be important in most high-luminosity double-ring colliders. In this report, the author describes a few parameter regimes and some critical parameter dependences of this type of instability, and illustrate these with simulation results for the PEP-II and KEK B factories, the LHC, the VLHC, and DAPHNE. In addition, the author studies the possibility and the potential impact of an electron cloud in the interaction region.

  8. Electron spectroscopy on high-temperature superconductors and related compounds

    International Nuclear Information System (INIS)

    Knupfer, M.

    1994-01-01

    In the last two classes of materials have been discovered which distinguish themselves due to a transition into the superconducting state at relatively high temperatures. These are the cuprate superconductors and the alkali metal doped fullerenes. In this work the electronic structure of representatives of these materials, undoped and Ca-doped YBa 2 Cu 4 O 8 and A 3 C 60 (A=K, Rb), has been investigated using electron energy-loss spectroscopy and photoemission spectroscopy. (orig.) [de

  9. Hummingbirds rely on both paracellular and carrier-mediated intestinal glucose absorption to fuel high metabolism

    Science.gov (United States)

    McWhorter, Todd J; Bakken, Bradley Hartman; Karasov, William H; del Rio, Carlos Martínez

    2005-01-01

    Twenty years ago, the highest active glucose transport rate and lowest passive glucose permeability in vertebrates were reported in Rufous and Anna's hummingbirds (Selasphorus rufus, Calypte anna). These first measurements of intestinal nutrient absorption in nectarivores provided an unprecedented physiological foundation for understanding their foraging ecology. They showed that physiological processes are determinants of feeding behaviour. The conclusion that active, mediated transport accounts for essentially all glucose absorption in hummingbirds influenced two decades of subsequent research on the digestive physiology and nutritional ecology of nectarivores. Here, we report new findings demonstrating that the passive permeability of hummingbird intestines to glucose is much higher than previously reported, suggesting that not all sugar uptake is mediated. Even while possessing the highest active glucose transport rates measured in vertebrates, hummingbirds must rely partially on passive non-mediated intestinal nutrient absorption to meet their high mass-specific metabolic demands. PMID:17148346

  10. Changes in the surface electronic states of semiconductor fine particles induced by high energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yamaki, Tetsuya; Asai, Keisuke; Ishigure, Kenkichi [Tokyo Univ. (Japan); Shibata, Hiromi

    1997-03-01

    The changes in the surface electronic states of Q-sized semiconductor particles in Langmuir-Blodgett (LB) films, induced by high energy ion irradiation, were examined by observation of ion induced emission and photoluminescence (PL). Various emission bands attributed to different defect sites in the band gap were observed at the initial irradiation stage. As the dose increased, the emissions via the trapping sites decreased in intensity while the band-edge emission developed. This suggests that the ion irradiation would remove almost all the trapping sites in the band gap. The low energy emissions, which show a multiexponential decay, were due to a donor-acceptor recombination between the deeply trapped carriers. It was found that the processes of formation, reaction, and stabilization of the trapping sites would predominantly occur under the photooxidizing conditions. (author)

  11. High resolution electron microscopy and electron diffraction of YBa2Cu3O(7-x)

    International Nuclear Information System (INIS)

    Krakow, W.; Shaw, T.M.

    1988-01-01

    Experimental high resolution electron micrographs and computer simulation experiments have been used to evaluate the visibility of the atomic constituents of YBa 2 Cu 3 O(7-x). In practice, the detection of oxygen has not been possible in contradiction to that predicted by modelling of perfect crystalline material. Preliminary computer experiments of the electron diffraction patterns when oxygen vacancies are introduced on the Cu-O sheets separating Ba layers show the diffuse streaks characteristic of short range ordering. 7 references

  12. High-Throughput Printing Process for Flexible Electronics

    Science.gov (United States)

    Hyun, Woo Jin

    Printed electronics is an emerging field for manufacturing electronic devices with low cost and minimal material waste for a variety of applications including displays, distributed sensing, smart packaging, and energy management. Moreover, its compatibility with roll-to-roll production formats and flexible substrates is desirable for continuous, high-throughput production of flexible electronics. Despite the promise, however, the roll-to-roll production of printed electronics is quite challenging due to web movement hindering accurate ink registration and high-fidelity printing. In this talk, I will present a promising strategy for roll-to-roll production using a novel printing process that we term SCALE (Self-aligned Capillarity-Assisted Lithography for Electronics). By utilizing capillarity of liquid inks on nano/micro-structured substrates, the SCALE process facilitates high-resolution and self-aligned patterning of electrically functional inks with greatly improved printing tolerance. I will show the fabrication of key building blocks (e.g. transistor, resistor, capacitor) for electronic circuits using the SCALE process on plastics.

  13. Electronic properties of high Tc superconductors. Propiedades electronicas de los superconductores de alta temperatura critica

    Energy Technology Data Exchange (ETDEWEB)

    Rojo, A G

    1989-01-01

    Using analytical and numerical methods, the electronic properties of the copper-oxygen plane in the normal phase of high Tc superconductors are described. Using the slave-boson technique in the saddle point, a theory of the metal insulator transition which generalizes the notions of a Mott insulator to the case of more than a single band for those planes is presented. A phase-diagram is obtained in the parameter space and effective masses, optical gaps and metallization are calculated as a function of the number of carriers. Based on the experimental evidence, the theory permits classification of superconducting compounds as charge transfer insulators in the stoichiometric case. The insulator state is characterized by a non-zero optical gap and a divergent effective mass which corresponds to the breakage of a Fermi-liquid scheme. The results obtained are applicable to metal-transition-oxides whose behaviour has been traditionally controversial and it is concluded that it is necessary to broaden the meaning of a Mott insulator to the case of more than a single band to better understand them. Based on the ideas of group renormalization in a real space, a lattice approximation is presented, which allows: a) To complement the treatment of slave-bosons in phase diagrams and optical gaps; b) Identification of an attraction mechanism between carriers originating from purely repulsive interactions. Numerical calculations in small clusters show the existence of a pairing mechanism showing a superconducting instability from a charge transfer insulator. (Author).

  14. Frontend electronics for high-precision single photo-electron timing using FPGA-TDCs

    Energy Technology Data Exchange (ETDEWEB)

    Cardinali, M., E-mail: cardinal@kph.uni-mainz.de [Institut für Kernphysik, Johannes Gutenberg-University Mainz, Mainz (Germany); Helmholtz Institut Mainz, Mainz (Germany); Dzyhgadlo, R.; Gerhardt, A.; Götzen, K.; Hohler, R.; Kalicy, G.; Kumawat, H.; Lehmann, D.; Lewandowski, B.; Patsyuk, M.; Peters, K.; Schepers, G.; Schmitt, L.; Schwarz, C.; Schwiening, J.; Traxler, M.; Ugur, C.; Zühlsdorf, M. [GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (Germany); Dodokhov, V.Kh. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Britting, A. [Friedrich Alexander-University of Erlangen-Nuremberg, Erlangen (Germany); and others

    2014-12-01

    The next generation of high-luminosity experiments requires excellent particle identification detectors which calls for Imaging Cherenkov counters with fast electronics to cope with the expected hit rates. A Barrel DIRC will be used in the central region of the Target Spectrometer of the planned PANDA experiment at FAIR. A single photo-electron timing resolution of better than 100 ps is required by the Barrel DIRC to disentangle the complicated patterns created on the image plane. R and D studies have been performed to provide a design based on the TRB3 readout using FPGA-TDCs with a precision better than 20 ps RMS and custom frontend electronics with high-bandwidth pre-amplifiers and fast discriminators. The discriminators also provide time-over-threshold information thus enabling walk corrections to improve the timing resolution. Two types of frontend electronics cards optimised for reading out 64-channel PHOTONIS Planacon MCP-PMTs were tested: one based on the NINO ASIC and the other, called PADIWA, on FPGA discriminators. Promising results were obtained in a full characterisation using a fast laser setup and in a test experiment at MAMI, Mainz, with a small scale DIRC prototype. - Highlights: • Frontend electronics for Cherenkov detectors have been developed. • FPGA-TDCs have been used for high precision timing. • Time over threshold has been utilised for walk correction. • Single photo-electron timing resolution less than 100 ps has been achieved.

  15. A High-Speed Power-Line Communication System with Band-Limited OQAM Based Multi-Carrier Transmission

    Science.gov (United States)

    Kawabata, Naohiro; Koga, Hisao; Muta, Osamu; Akaiwa, Yoshihiko

    As a method to realize a high-speed communication in the home network, the power-line communication (PLC) technique is known. A problem of PLC is that leakage radiation interferes with existing systems. When OFDM is used in a PLC system, the leakage radiation is not sufficiently reduced, even if the subcarriers corresponding to the frequency-band of the existing system are never used, because the signal is not strictly band-limited. To solve this problem, each subcarrier must be band-limited. In this paper, we apply the OQAM based multi-carrier transmission (OQAM-MCT) to a high-speed PLC system, where each subcarrier is individually band-limited. We also propose a pilot-symbol sequence suitable for frequency offset estimation, symbol-timing detection and channel estimation in the OQAM-MCT system. In this method, the pilot signal-sequence consists of a repeated series of the same data symbol. With this method, the pilot sequence approximately becomes equivalent to OFDM sequence and therefore existing pilot-assisted methods for OFDM are also applicable to OQAM-MCT system. Computer simulation results show that the OQAM-MCT system achieves both good transmission rate performance and low out-of-band radiation in PLC channels. It is also shown that the proposed pilot-sequence improves frequency offset estimation, symbol-timing detection and channel estimation performance as compared with the case of using pseudo-noise sequence.

  16. Electronics and triggering challenges for the CMS High Granularity Calorimeter

    Science.gov (United States)

    Lobanov, A.

    2018-02-01

    The High Granularity Calorimeter (HGCAL), presently being designed by the CMS collaboration to replace the CMS endcap calorimeters for the High Luminosity phase of LHC, will feature six million channels distributed over 52 longitudinal layers. The requirements for the front-end electronics are extremely challenging, including high dynamic range (0.2 fC-10 pC), low noise (~2000 e- to be able to calibrate on single minimum ionising particles throughout the detector lifetime) and low power consumption (~20 mW/channel), as well as the need to select and transmit trigger information with a high granularity. Exploiting the intrinsic precision-timing capabilities of silicon sensors also requires careful design of the front-end electronics as well as the whole system, particularly clock distribution. The harsh radiation environment and requirement to keep the whole detector as dense as possible will require novel solutions to the on-detector electronics layout. Processing the data from the HGCAL imposes equally large challenges on the off-detector electronics, both for the hardware and incorporated algorithms. We present an overview of the complete electronics architecture, as well as the performance of prototype components and algorithms.

  17. A high power, tunable free electron maser for fusion

    Energy Technology Data Exchange (ETDEWEB)

    Urbanus, W.H.; Bratman, V.L.; Bongers, W.A.; Caplan, M.; Denisov, G.G.; Geer, C.A.J. van der; Manintveld, P.; Militsyn, B.; Oomens, A.A.M.; Poelman, A.J.; Plomp, J.; Pluygers, J.; Savilov, A.V.; Smeets, P.H.M.; Sterk, A.B.; Verhoeven, A.G.A

    2001-01-01

    The Fusion-FEM experiment, a high-power, electrostatic free-electron maser being built at the FOM-Institute for Plasma Physics 'Rijnhuizen', is operated at various frequencies. So far, experiments were done without a depressed collector, and the pulse length was limited to 12 {mu}s. Nevertheless, many aspects of generation of mm-wave power have been explored, such as the dependency on the electron beam energy and beam current, and cavity settings such as the feedback coefficient. An output power of 730 kW at 206 GHz is generated with a 7.2 A, 1.77 MeV electron beam, and 360 kW at 167 GHz is generated with a 7.4 A, 1.61 MeV electron beam. It is shown experimentally and by simulations that, depending on the electron beam energy, the FEM can operate in single-frequency regime. The next step of the FEM experiment is to reach a pulse length of 100 ms. The major part of the beam line, the high voltage systems, and the collector have been completed. The undulator and mm-wave cavity are now at high voltage (2 MV). The new mm-wave transmission line, which transports the mm-wave output power from the high-voltage terminal to ground and outside the pressure tank, has been tested at low power.

  18. High electron beam dosimetry using ZrO2

    International Nuclear Information System (INIS)

    Lueza M, F.; Rivera M, T.; Azorin N, J.; Garcia H, M.

    2009-10-01

    This paper reports the experimental results of studying the thermoluminescent (Tl) properties of ZrO 2 powder embedded in polytetrafluorethylene (PTFE) exposed to high energy electron beam from linear accelerators (Linac). Structural and morphological characteristics were also reported. Irradiations were conducted using high energy electrons beams in the range from 2 to 18 MeV. Pellets of ZrO 2 +PTFE were produced using polycrystalline powder grown by the precipitation method. These pellets presented a Tl glow curve exhibiting an intense glow peak centered at around 235 C. Tl response as a function of high electron absorbed dose was linear in the range from 2 to 30 Gy. Repeatability determined by exposing a set of pellets repeatedly to the same electron absorbed dose was 0.5%. Fading along 30 days was about 50%. Then, results obtained in this study suggest than ZrO 2 +PTFE pellets could be used for high energy electron beam dosimetry provided fading correction is accounted for. (Author)

  19. Evaporation of carbon using electrons of a high density plasma

    International Nuclear Information System (INIS)

    Muhl, S.; Camps, E.; Escobar A, L.; Garcia E, J.L.; Olea, O.

    1999-01-01

    The high density plasmas are used frequently in the preparation of thin films or surface modification, for example to nitridation. In these processes, are used mainly the ions and the neutrals which compose the plasma. However, the electrons present in the plasma are not used, except in the case of chemical reactions induced by collisions, although the electron bombardment usually get hot the work piece. Through the adequate polarization of a conductor material, it is possible to extract electrons from a high density plasma at low pressure, that could be gotten the evaporation of this material. As result of the interaction between the plasma and the electron flux with the vapor produced, this last will be ionized. In this work, it is reported the use of this novelty arrangement to prepare carbon thin films using a high density argon plasma and a high purity graphite bar as material to evaporate. It has been used substrates outside plasma and immersed in the plasma. Also it has been reported the plasma characteristics (temperature and electron density, energy and ions flux), parameters of the deposit process (deposit rate and ion/neutral rate) as well as the properties of the films obtained (IR absorption spectra and UV/Vis, elemental analysis, hardness and refractive index. (Author)

  20. High current precision long pulse electron beam position monitor

    CERN Document Server

    Nelson, S D; Fessenden, T J; Holmes, C

    2000-01-01

    Precision high current long pulse electron beam position monitoring has typically experienced problems with high Q sensors, sensors damped to the point of lack of precision, or sensors that interact substantially with any beam halo thus obscuring the desired signal. As part of the effort to develop a multi-axis electron beam transport system using transverse electromagnetic stripline kicker technology, it is necessary to precisely determine the position and extent of long high energy beams for accurate beam position control (6 - 40 MeV, 1 - 4 kA, 2 μs beam pulse, sub millimeter beam position accuracy.) The kicker positioning system utilizes shot-to-shot adjustments for reduction of relatively slow (< 20 MHz) motion of the beam centroid. The electron beams passing through the diagnostic systems have the potential for large halo effects that tend to corrupt position measurements.

  1. Polyoxovanadate-alkoxide clusters as multi-electron charge carriers for symmetric non-aqueous redox flow batteries.

    Science.gov (United States)

    VanGelder, L E; Kosswattaarachchi, A M; Forrestel, P L; Cook, T R; Matson, E M

    2018-02-14

    Non-aqueous redox flow batteries have emerged as promising systems for large-capacity, reversible energy storage, capable of meeting the variable demands of the electrical grid. Here, we investigate the potential for a series of Lindqvist polyoxovanadate-alkoxide (POV-alkoxide) clusters, [V 6 O 7 (OR) 12 ] (R = CH 3 , C 2 H 5 ), to serve as the electroactive species for a symmetric, non-aqueous redox flow battery. We demonstrate that the physical and electrochemical properties of these POV-alkoxides make them suitable for applications in redox flow batteries, as well as the ability for ligand modification at the bridging alkoxide moieties to yield significant improvements in cluster stability during charge-discharge cycling. Indeed, the metal-oxide core remains intact upon deep charge-discharge cycling, enabling extremely high coulombic efficiencies (∼97%) with minimal overpotential losses (∼0.3 V). Furthermore, the bulky POV-alkoxide demonstrates significant resistance to deleterious crossover, which will lead to improved lifetime and efficiency in a redox flow battery.

  2. Preliminary investigations on high energy electron beam tomography

    Energy Technology Data Exchange (ETDEWEB)

    Baertling, Yves; Hoppe, Dietrich; Hampel, Uwe

    2010-12-15

    In computed tomography (CT) cross-sectional images of the attenuation distribution within a slice are created by scanning radiographic projections of an object with a rotating X-ray source detector compound and subsequent reconstruction of the images from these projection data on a computer. CT can be made very fast by employing a scanned electron beam instead of a mechanically moving X-ray source. Now this principle was extended towards high-energy electron beam tomography with an electrostatic accelerator. Therefore a dedicated experimental campaign was planned and carried out at the Budker Institute of Nuclear Physics (BINP), Novosibirsk. There we investigated the capabilities of BINP's accelerators as an electron beam generating and scanning unit of a potential high-energy electron beam tomography device. The setup based on a 1 MeV ELV-6 (BINP) electron accelerator and a single detector. Besides tomographic measurements with different phantoms, further experiments were carried out concerning the focal spot size and repeat accuracy of the electron beam as well as the detector's response time and signal to noise ratio. (orig.)

  3. High-resolution electron microscopy of advanced materials

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, T.E.; Kung, H.H.; Sickafus, K.E.; Gray, G.T. III; Field, R.D.; Smith, J.F. [Los Alamos National Lab., NM (United States). Materials Science and Technology Div.

    1997-11-01

    This final report chronicles a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The High-Resolution Electron Microscopy Facility has doubled in size and tripled in quality since the beginning of the three-year period. The facility now includes a field-emission scanning electron microscope, a 100 kV field-emission scanning transmission electron microscope (FE-STEM), a 300 kV field-emission high-resolution transmission electron microscope (FE-HRTEM), and a 300 kV analytical transmission electron microscope. A new orientation imaging microscope is being installed. X-ray energy dispersive spectrometers for chemical analysis are available on all four microscopes; parallel electron energy loss spectrometers are operational on the FE-STEM and FE-HRTEM. These systems enable evaluation of local atomic bonding, as well as chemical composition in nanometer-scale regions. The FE-HRTEM has a point-to-point resolution of 1.6 {angstrom}, but the resolution can be pushed to its information limit of 1 {angstrom} by computer reconstruction of a focal series of images. HRTEM has been used to image the atomic structure of defects such as dislocations, grain boundaries, and interfaces in a variety of materials from superconductors and ferroelectrics to structural ceramics and intermetallics.

  4. Electron curing for high speed paper, film and foil converting

    International Nuclear Information System (INIS)

    Nablo, S.V.; Tripp, E.P.

    1979-01-01

    The status of self-shielded, compact electron processors for flexible web converting applications is reviewed. The uses of these units for a variety of laminating applications are described, with emphasis on the application techniques appropriate for low weight, (1 to 2 gm/m 2 ) 100% convertible adhesives. Performance data for electron cured adhesives with polyester/polyethylene systems is presented and compared with conventional urethane systems. The unique surface features of electron cured gravure coatings applied and cured at high speed are discussed, with reference to both paper and film substrates. An important advantage of electron curing of buried adhesive layers is the process quality control permitted by this 'all-electric' system. The performance characteristics of curing atmosphere control (inerting) for coatings are reviewed. Industrial experience with these processors has shown that effective inerting of coated flexible webs at speeds to 250 m/minute is both practical and economical. (author)

  5. Disinfection of wastewaters: high-energy electron vs gamma irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Farooq, S [King Fahd Univ. of Petroleum and Minerals, Dhahran (Saudi Arabia). Dept. of Civil Engineering; Kurucz, C N; Waite, T D [Miami Univ., Coral Gables, FL (United States); Cooper, W J [Florida International Univ., Miami, FL (United States). Drinking Water Research Center

    1993-07-01

    A study was undertaken to examine the sensitivity of a wastewater population of coliphage, total coliforms and total flora present in raw sewage and secondary effluent after irradiating with similar doses delivered by a high-energy electron beam and [gamma]-radiation. The electron beam study was conducted on a large scale at the Virginia Key Wastewater Treatment Plant, Miami, Florida. The facility is equipped with a 1.5 MeV, 50 mA electron accelerator, with a wastewater flow rate of 8ls[sup -1]. Concurrent [gamma]-radiation studies were conducted at laboratory scale using a 5000 Ci, [sup 60]Co [gamma]-source. Three logs reduction of all three test organisms were observed at an electron beam dose of 500 krads, while at least four logs reduction were observed at the same dose utilizing the [gamma]'source. (Author).

  6. High power microwave emission and diagnostics of microsecond electron beams

    Energy Technology Data Exchange (ETDEWEB)

    Gilgenbach, R; Hochman, J M; Jayness, R; Rintamaki, J I; Lau, Y Y; Luginsland, J; Lash, J S [Univ. of Michigan, Ann Arbor, MI (United States). Intense Electron Beam Interaction Lab.; Spencer, T A [Air Force Phillips Lab., Kirtland AFB, NM (United States)

    1997-12-31

    Experiments were performed to generate high power, long-pulse microwaves by the gyrotron mechanism in rectangular cross-section interaction cavities. Long-pulse electron beams are generated by MELBA (Michigan Electron Long Beam Accelerator), which operates with parameters: -0.8 MV, 1-10 kA, and 0.5-1 microsecond pulse length. Microwave power levels are in the megawatt range. Polarization control is being studied by adjustment of the solenoidal magnetic field. Initial results show polarization power ratios up to a factor of 15. Electron beam dynamics (V{sub perp}/V{sub par}) are being measured by radiation darkening on glass plates. Computer modeling utilizes the MAGIC Code for electromagnetic waves and a single electron orbit code that includes a distribution of angles. (author). 4 figs., 4 refs.

  7. Clinical evaluation of high-risk HPV detection on self-samples using the indicating FTA-elute solid-carrier cartridge

    NARCIS (Netherlands)

    Geraets, D.T.; Baars, R. van; Alonso, I.; Ordi, J.; Torne, A.; Melchers, W.J.G.; Meijer, C.J.W.; Quint, W.G.V.

    2013-01-01

    BACKGROUND: High-risk human papillomavirus (hrHPV) testing in cervical screening is usually performed on physician-taken cervical smears in liquid-based medium. However, solid-state specimen carriers allow easy, non-hazardous storage and transportation and might be suitable for self-collection by

  8. Innovative electron-beam welding of high-melting metals

    International Nuclear Information System (INIS)

    Behr, W.; Reisgen, U.

    2007-01-01

    Since its establishment as nuclear research plant Juelich in the year 1956, the research centre Juelich (FZJ) is concerned with the material processing of special metals. Among those are, above all, the high-melting refractory metals niobium, molybdenum and tungsten. Electron beam welding has always been considered to be an innovative special welding method; in the FZJ, electron beam welding has, moreover, always been adapted to the increasing demands made by research partners and involved manufacturing and design sectors. From the manual equipment technology right up to highly modern multi-beam technique, the technically feasible for fundamental research has, this way, always been realised. (Abstract Copyright [2007], Wiley Periodicals, Inc.) [de

  9. The LLNL/UCLA high gradient inverse free electron laser

    Energy Technology Data Exchange (ETDEWEB)

    Moody, J. T.; Musumeci, P.; Anderson, G.; Anderson, S.; Betts, S.; Fisher, S.; Gibson, D.; Tremaine, A.; Wu, S. [Department of Physics and Astronomy, UCLA, Los Angeles California, 90095 (United States); Lawrence Livermore National Laboratory (United States)

    2012-12-21

    We describe the Inverse Free Electron Accelerator currently under construction at Lawrence Livermore National Lab. Upon completion of this accelerator, high brightness electrons generated in the photoinjector blowout regime and accelerated to 50 MeV by S-band accelerating sections will interact with > 4 TW peak power Ti:Sapphire laser in a highly tapered 50 cm undulator and experience an acceleration gradient of > 200 MeV/m. We present the final design of the accelerator as well as the results of start-to-end simulations investigating preservation of beam quality and tolerances involved with this accelerator.

  10. Simulation of electron displacement damage in a high voltage electron microscope

    International Nuclear Information System (INIS)

    Ono, Susumu; Kanaya, Koichi

    1979-01-01

    By applying the fundamental theory of the neutron cooling to the conservation law of energy and momentum, the threshold energies of incident electrons for displacing atoms are calculated and illustrated periodically for the atomic number. And the observable damage due to the secondary action of displaced atoms in the practical use of a high voltage electron microscope is described for several materials and accelerating voltages. The trajectories of incident electrons and displaced atoms in several materials are simulated by a Monte-Carlo method, using rigorous formulas of electron scattering events, i.e. elastic and inelastic scattering cross-sections, ionization loss and plasmon excitation. The simulation results are substantially agreement with experiments. (author)

  11. High luminosity electron-hadron collider eRHIC

    Energy Technology Data Exchange (ETDEWEB)

    Ptitsyn, V.; Aschenauer, E.; Bai, M.; Beebe-Wang, J.; Belomestnykh, S.; Ben-Zvi, I.; Blaskiewicz, M..; Calaga, R.; Chang, X.; Fedotov, A.; Gassner, D.; Hammons, L.; Hahn, H.; Hammons, L.; He, P.; Hao, Y.; Jackson, W.; Jain, A.; Johnson, E.C.; Kayran, D.; Kewisch, J.; Litvinenko, V.N.; Luo, Y.; Mahler, G.; McIntyre, G.; Meng, W.; Minty, M.; Parker, B.; Pikin, A.; Rao, T.; Roser, T.; Skaritka, J.; Sheehy, B.; Skaritka, J.; Tepikian, S.; Than, Y.; Trbojevic, D.; Tsoupas, N.; Tuozzolo, J.; Wang, G.; Webb, S.; Wu, Q.; Xu, W.; Pozdeyev, E.; Tsentalovich, E.

    2011-03-28

    We present the design of a future high-energy high-luminosity electron-hadron collider at RHIC called eRHIC. We plan on adding 20 (potentially 30) GeV energy recovery linacs to accelerate and to collide polarized and unpolarized electrons with hadrons in RHIC. The center-of-mass energy of eRHIC will range from 30 to 200 GeV. The luminosity exceeding 10{sup 34} cm{sup -2} s{sup -1} can be achieved in eRHIC using the low-beta interaction region with a 10 mrad crab crossing. We report on the progress of important eRHIC R&D such as the high-current polarized electron source, the coherent electron cooling, ERL test facility and the compact magnets for recirculation passes. A natural staging scenario of step-by-step increases of the electron beam energy by building-up of eRHIC's SRF linacs is presented.

  12. Strongly correlated electrons at high pressure: an approach by inelastic X-Ray scattering; Electrons correles sous haute pression: une approche par diffusion inelastique des rayons X

    Energy Technology Data Exchange (ETDEWEB)

    Rueff, J.P

    2007-06-15

    Inelastic X-ray scattering (IXS) and associated methods has turn out to be a powerful alternative for high-pressure physics. It is an all-photon technique fully compatible with high-pressure environments and applicable to a vast range of materials. Standard focalization of X-ray in the range of 100 microns is typical of the sample size in the pressure cell. Our main aim is to provide an overview of experimental results obtained by IXS under high pressure in 2 classes of materials which have been at the origin of the renewal of condensed matter physics: strongly correlated transition metal oxides and rare-earth compounds. Under pressure, d and f-electron materials show behaviors far more complex that what would be expected from a simplistic band picture of electron delocalization. These spectroscopic studies have revealed unusual phenomena in the electronic degrees of freedom, brought up by the increased density, the changes in the charge-carrier concentration, the over-lapping between orbitals, and hybridization under high pressure conditions. Particularly we discuss about pressure induced magnetic collapse and metal-insulator transitions in 3d compounds and valence fluctuations phenomena in 4f and 5f compounds. Thanks to its superior penetration depth, chemical selectivity and resonant enhancement, resonant inelastic X-ray scattering has appeared extremely well suited to high pressure physics in strongly correlated materials. (A.C.)

  13. Synergic Adsorption–Biodegradation by an Advanced Carrier for Enhanced Removal of High-Strength Nitrogen and Refractory Organics

    KAUST Repository

    Ahmad, Muhammad

    2017-03-29

    Coking wastewater contains not only high-strength nitrogen but also toxic biorefractory organics. This study presents simultaneous removal of high-strength quinoline, carbon, and ammonium in coking wastewater by immobilized bacterial communities composed of a heterotrophic strain Pseudomonas sp. QG6 (hereafter referred as QG6), ammonia-oxidizing bacteria (AOB), and anaerobic ammonium oxidation bacteria (anammox). The bacterial immobilization was implemented with the help of a self-designed porous cubic carrier that created structured microenvironments including an inner layer adapted for anaerobic bacteria, a middle layer suitable for coaggregation of certain aerobic and anaerobic bacteria, and an outer layer for heterotrophic bacteria. By coating functional polyurethane foam (FPUF) with iron oxide nanoparticles (IONPs), the biocarrier (IONPs-FPUF) could provide a good outer-layer barrier for absorption and selective treatment of aromatic compounds by QG6, offer a conducive environment for anammox in the inner layer, and provide a mutualistic environment for AOB in the middle layer. Consequently, simultaneous nitrification and denitrification were reached with the significant removal of up to 322 mg L (98%) NH, 311 mg L (99%) NO, and 633 mg L (97%) total nitrogen (8 mg L averaged NO concentration was recorded in the effluent), accompanied by an efficient removal of chemical oxygen demand by 3286 mg L (98%) and 350 mg L (100%) quinoline. This study provides an alternative way to promote synergic adsorption and biodegradation with the help of a modified biocarrier that has great potential for treatment of wastewater containing high-strength carbon, toxic organic pollutants, and nitrogen.

  14. Synergic Adsorption-Biodegradation by an Advanced Carrier for Enhanced Removal of High-Strength Nitrogen and Refractory Organics.

    Science.gov (United States)

    Ahmad, Muhammad; Liu, Sitong; Mahmood, Nasir; Mahmood, Asif; Ali, Muhammad; Zheng, Maosheng; Ni, Jinren

    2017-04-19

    Coking wastewater contains not only high-strength nitrogen but also toxic biorefractory organics. This study presents simultaneous removal of high-strength quinoline, carbon, and ammonium in coking wastewater by immobilized bacterial communities composed of a heterotrophic strain Pseudomonas sp. QG6 (hereafter referred as QG6), ammonia-oxidizing bacteria (AOB), and anaerobic ammonium oxidation bacteria (anammox). The bacterial immobilization was implemented with the help of a self-designed porous cubic carrier that created structured microenvironments including an inner layer adapted for anaerobic bacteria, a middle layer suitable for coaggregation of certain aerobic and anaerobic bacteria, and an outer layer for heterotrophic bacteria. By coating functional polyurethane foam (FPUF) with iron oxide nanoparticles (IONPs), the biocarrier (IONPs-FPUF) could provide a good outer-layer barrier for absorption and selective treatment of aromatic compounds by QG6, offer a conducive environment for anammox in the inner layer, and provide a mutualistic environment for AOB in the middle layer. Consequently, simultaneous nitrification and denitrification were reached with the significant removal of up to 322 mg L -1 (98%) NH 4 , 311 mg L -1 (99%) NO 2 , and 633 mg L -1 (97%) total nitrogen (8 mg L -1 averaged NO 3 concentration was recorded in the effluent), accompanied by an efficient removal of chemical oxygen demand by 3286 mg L -1 (98%) and 350 mg L -1 (100%) quinoline. This study provides an alternative way to promote synergic adsorption and biodegradation with the help of a modified biocarrier that has great potential for treatment of wastewater containing high-strength carbon, toxic organic pollutants, and nitrogen.

  15. The influence of defects produced by high energy electrons on the electrical characteristics of p-n junctions

    International Nuclear Information System (INIS)

    Koch, L.; Van Dong, N.

    1961-01-01

    The life-time of minority carriers in semi-conductors is very sensitive to the presence of defects introduced by high-energy electrons. The formation of defects thus affects the short-circuiting current and the open circuit voltage of a p-n junction, these being dependent on the life-time. In the work presented, we have bombarded several types of germanium and silicon junctions with 2 MeV electrons from a Van der Graaff, and with β-particles from radioactive sources. The experiments were carried out both at ordinary temperatures and that of liquid air. In this latter case an anomaly in the electron-volt effect was found: the short-circuiting current and the voltage in vacuo, after an initial decrease, increase again and exceed their initial maximum value before once more decreasing. A qualitative interpretation of this abnormal effect is given. (author) [fr

  16. ROLE OF DIAMOND SECONDARY EMITTERS IN HIGH BRIGHTNESS ELECTRON SOURCES

    International Nuclear Information System (INIS)

    2005-01-01

    In this paper we explore the possibility of using diamond secondary emitter in a high average current electron injector to amplify the current from the photocathode and to isolate the cathode and the injector from each other to increase the life time of the cathode and preserve the performance of the injector. Secondary electron yield of 225 and current density of 0.8 a/cm 2 have been measured in the transmission mode from type 2 a natural diamond. Although the diamond will be heated during normal operation in the injector, calculations indicate that by cryogenically cooling the diamond, the temperature gradient along the diamond can be maintained within the acceptable range. The electron energy and temporal distributions are expected to be narrow from this device resulting in high brightness beams. Plans are underway to measure the SEY in emission mode, fabricate photocathode-diamond capsule and test diamond and capsule in superconducting RF injector

  17. High power electron accelerators for flue gas treatment

    International Nuclear Information System (INIS)

    Zimek, Z.

    2011-01-01

    Flue gas treatment process based on electron beam application for SO 2 and NO x removal was successfully demonstrated in number of laboratories, pilot plants and industrial demonstration facilities. The industrial scale application of an electron beam process for flue gas treatment requires accelerators modules with a beam power 100-500 kW and electron energy range 0.8-1.5 MeV. The most important accelerator parameters for successful flue gas radiation technology implementation are related to accelerator reliability/availability, electrical efficiency and accelerator price. Experience gained in high power accelerators exploitation in flue gas treatment industrial demonstration facility was described and high power accelerator constructions have been reviewed. (author)

  18. High power electron accelerators for flue gas treatment

    Energy Technology Data Exchange (ETDEWEB)

    Zimek, Z. [Institute of Nuclear Chemistry and Technology, Warsaw (Poland)

    2011-07-01

    Flue gas treatment process based on electron beam application for SO{sub 2} and NO{sub x} removal was successfully demonstrated in number of laboratories, pilot plants and industrial demonstration facilities. The industrial scale application of an electron beam process for flue gas treatment requires accelerators modules with a beam power 100-500 kW and electron energy range 0.8-1.5 MeV. The most important accelerator parameters for successful flue gas radiation technology implementation are related to accelerator reliability/availability, electrical efficiency and accelerator price. Experience gained in high power accelerators exploitation in flue gas treatment industrial demonstration facility was described and high power accelerator constructions have been reviewed. (author)

  19. Thermalisation of high energy electrons and positrons in water vapour

    Science.gov (United States)

    Munoz, A.; Blanco, F.; Limao-Vieira, P.; Thorn, P. A.; Brunger, M. J.; Buckman, S. J.; Garcia, G.

    2008-07-01

    In this study we describe a method to simulate single electron tracks of electrons in molecular gases, particularly in water vapour, from relatively high energies, where Born (Inokuti 1971) approximation is supposed to be valid, down to thermal energies paying special attention to the low energy secondary electrons which are abundantly generated along the energy degradation procedure. Experimental electron scattering cross sections (Munoz et al. 2007) and energy loss spectra (Thorn et al. 2007) have been determined, where possible, to be used as input parameters of the simulating program. These experimental data have been complemented with optical potential calculation (Blanco and Garcia 2003) providing a complete set of interaction probability functions for each type of collision which could take place in the considered energy range: elastic, ionization, electronic excitation, vibrational and rotational excitation. From the simulated track structure (Munoz et al. 2005) information about energy deposition and radiation damage at the molecular level can be derived. A similar procedure is proposed to the study of single positron tracks in gases. Due to the lack of experimental data for positron interaction with molecules, especially for those related to energy loss and excitation cross sections, some distribution probability data have been derived from those of electron scattering by introducing positron characteristics as positroniun formation. Preliminary results for argon are presented discussing also the utility of the model to biomedical applications based on positron emitters.

  20. Consideration of Relativistic Dynamics in High-Energy Electron Coolers

    CERN Document Server

    Bruhwiler, David L

    2005-01-01

    A proposed electron cooler for RHIC would use ~55 MeV electrons to cool fully-ionized 100 GeV/nucleon gold ions.* At two locations in the collider ring, the electrons and ions will co-propagate for ~13 m, with velocities close to c and gamma>100. To lowest-order, one can Lorentz transform all physical quantities into the beam frame and calculate the dynamical friction forces assuming a nonrelativisitc, electrostatic plasma. However, we show that nonlinear space charge forces of the bunched electron beam on the ions must be calculated relativistically, because an electrostatic beam-frame calculation is not valid for such short interaction times. The validity of nonrelativistic friction force calculations must also be considered. Further, the transverse thermal velocities of the high-charge (~20 nC) electron bunch are large enough that some electrons have marginally relativistic velocities, even in the beam frame. Hence, we consider relativistic binary collisions – treating the model problem of ...

  1. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Reza, Shahed; Chumbes, Eduardo M. [Raytheon Integrated Defense Systems, Andover, Massachusetts 01810 (United States); Khurgin, Jacob [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2015-10-12

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

  2. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Bajaj, Sanyam; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang; Reza, Shahed; Chumbes, Eduardo M.; Khurgin, Jacob; Rajan, Siddharth

    2015-01-01

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10 7  cm/s at a low sheet charge density of 7.8 × 10 11  cm −2 . An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs

  3. Thermal instability and the growth of the InGaAs/AlGaAs pseudomorphic high electron mobility transistor system

    International Nuclear Information System (INIS)

    Pellegrino, Joseph G.; Qadri, Syed B.; Mahadik, Nadeemullah A.; Rao, Mulpuri V.; Tseng, Wen F.; Thurber, Robert; Gajewski, Donald; Guyer, Jonathan

    2007-01-01

    The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%-3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77 K

  4. Structure Identification in High-Resolution Transmission Electron Microscopic Images

    DEFF Research Database (Denmark)

    Vestergaard, Jacob Schack; Kling, Jens; Dahl, Anders Bjorholm

    2014-01-01

    A connection between microscopic structure and macroscopic properties is expected for almost all material systems. High-resolution transmission electron microscopy is a technique offering insight into the atomic structure, but the analysis of large image series can be time consuming. The present ...

  5. Ultra-stretchable Interconnects for high-density stretchable electronics

    NARCIS (Netherlands)

    Shafqat, S.; Hoefnagels, J.P.M.; Savov, A.; Joshi, S.; Dekker, R.; Geers, M.G.D.

    2017-01-01

    The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for

  6. Scaling laws in high energy electron-nuclear processes

    International Nuclear Information System (INIS)

    Chemtob, M.

    1980-11-01

    We survey the parton model description of high momentum transfer electron scattering processes with nuclei. We discuss both nucleon and quark parton models and confront the patterns of scaling laws violations, induced by binding effects, in the former, and perturbative QCD effects, in the latter

  7. High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

    Science.gov (United States)

    Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

    2002-01-01

    It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

  8. Human enamel structure studied by high resolution electron microscopy

    International Nuclear Information System (INIS)

    Wen, S.L.

    1989-01-01

    Human enamel structural features are characterized by high resolution electron microscopy. The human enamel consists of polycrystals with a structure similar to Ca10(PO4)6(OH)2. This article describes the structural features of human enamel crystal at atomic and nanometer level. Besides the structural description, a great number of high resolution images are included. Research into the carious process in human enamel is very important for human beings. This article firstly describes the initiation of caries in enamel crystal at atomic and unit-cell level and secondly describes the further steps of caries with structural and chemical demineralization. The demineralization in fact, is the origin of caries in human enamel. The remineralization of carious areas in human enamel has drawn more and more attention as its potential application is realized. This process has been revealed by high resolution electron microscopy in detail in this article. On the other hand, the radiation effects on the structure of human enamel are also characterized by high resolution electron microscopy. In order to reveal this phenomenon clearly, a great number of electron micrographs have been shown, and a physical mechanism is proposed. 26 references

  9. The highly reintegrative approach of electronic monitoring in the Netherlands

    NARCIS (Netherlands)

    Boone, M.M.; Kooij, van der M.; Rap, S.E.

    2017-01-01

    This contribution describes the way electronic monitoring (EM) is organized and implemented in the Netherlands. It will become clear that the situation in the Netherlands is characterized by, in particular, two features. The application of EM is highly interwoven with the Probation Service and its

  10. High-density natural luffa sponge as anaerobic microorganisms carrier for degrading 1,1,1-TCA in groundwater.

    Science.gov (United States)

    Wang, Wenbing; Wu, Yanqing; Zhang, Chi

    2017-03-01

    Anaerobic microorganisms were applied to degrade organic contaminants in groundwater with permeable reactive barriers (PRBs). However, anaerobic microorganisms need to select optimal immobilizing material as carrier. The potential of high-density natural luffa sponge (HDLS) (a new variety of luffa) for the immobilization and protection of anaerobic microorganisms was investigated. The HDLS has a dense structure composed of a complicated interwoven fibrous network. Therefore, the abrasion rate of HDLS (0.0068 g s -1 ) was the smallest among the four carriers [HDLS, ordinary natural luffa sponge (OLS), polyurethane sponge (PS), and gel carrier AQUAPOROUSGEL (APG)]. The results suggest that it also had the greatest water retention (10.26 H 2 O-g dry carrier-g -1 ) and SS retention (0.21 g dry carrier-g -1 ). In comparison to well-established commercialized gel carrier APG, HDLS was of much better mechanical strength, hydrophilicity and stability. Microbial-immobilized HDLS also had the best performance for the remediation of 1,1,1-TCA simulated groundwater. Analysis of the clone libraries from microorganism-immobilized HDLS showed the HDLS could protect microorganisms from the toxicity of 1,1,1-TCA and maintain the stability of microbial community diversity. The mechanism of HDLS immobilizing and protecting microorganisms was proposed as follows. The HDLS had a micron-scale honeycomb structure (30-40 μm) and an irregular ravine structure (4-20 μm), which facilitate the immobilization of anaerobic microorganisms and protect the anaerobic microorganisms.

  11. Analysis of electron cyclotron emission spectra of high electron temperature, supershot plasmas in TFTR

    International Nuclear Information System (INIS)

    Taylor, G.; Arunasalam, V.; Efthimion, P.C.; Grek, B.

    1993-01-01

    A primary objective of the TFTR program since 1986 has been the study and optimization of deuterium Supershot plasmas. These plasmas are predominantly heated by 90-110 keV neutral deuterium beams (P NBI /P OH >30), central ion temperatures are ∝30 keV and central electron temperatures from ECE (T ECE ) often exceed 10 keV. Central electron temperature data measured with a TV Thomson scattering (TVTS) system (T TVTS ) during the period 1987-1990 have been compared with data from three different ECE instruments on TFTR. Although T ECE ∝T TVTS for temperatures below 6 keV, there is a systematically increasing disagreement at higher electron temperatures, with T ECE ∝1.2 T TVTS for T TVTS in the range 9-10 keV. Recent theoretical work on the ECE radiation temperature of non-equilibrium plasmas indicates that for a bi-Maxwellian electron velocity distribution with a ratio of tail to bulk electron density η, a bulk temperature T b , and a hot tail temperature T h , the perpendicular ECE radiation temperature is given by T ECE ∝T b {1+η(T h /T b )}, for η ECE would be enhanced over T TVTS by a factor which depends on η and T h . This paper investigates whether the discrepancy between T TVTS and T ECE seen in TFTR Supershots at high electron temperatures is due to the presence of a hot electron tail component. The extraordinary mode ECE spectrum at the second, third and fourth harmonics is measured on the horizontal midplane by an absolutely calibrated ECE Michelson interferometer. This ECE spectrum is compared with the output from a time-independent transport code with relativistic opacity which solves the three-dimensional ECE radiation transport in a toroidally symmetric, two-dimensional geometry and uses measured electron density and temperature profiles from the TVTS system. (orig.)

  12. Development of an electron gun for high power CW electron linac (1). Beam experiment for basic performance of electron gun

    International Nuclear Information System (INIS)

    Yamazaki, Yoshio; Nomura, Masahiro; Komata, Tomoki

    1999-05-01

    Presently, the Beam Group of Oarai Engineering Center in Japan Nuclear Cycle Development Institute (JNC) completed the high power CW electron linac. Then we started full-scale beam experiments after the government permission for a radiation equipment had given last January. Measurements of basic performance for the mesh-grid type electron gun have been done to launch stable beam at 300 mA peak current downstream of the accelerator. These experiments disclosed to increase beam loss in the electron gun in some cases of voltage supplied the mesh-grid in spite of same beam current from gun. Consequently, we could find the best condition for mesh-grid voltage and heater current to supply stable beam at 300 mA peak current for accelerator study. (author)

  13. BANSHEE: High-voltage repetitively pulsed electron-beam driver

    International Nuclear Information System (INIS)

    VanHaaften, F.

    1992-01-01

    BANSHEE (Beam Accelerator for a New Source of High-Energy Electrons) this is a high-voltage modulator is used to produce a high-current relativistic electron beam for high-power microwave tube development. The goal of the BANSHEE research is first to achieve a voltage pulse of 700--750 kV with a 1-μs pulse width driving a load of ∼100 Ω, the pulse repetition frequency (PRF) of a few hertz. The ensuing goal is to increase the pulse amplitude to a level approaching 1 MV. We conducted tests using half the modulator with an output load of 200 Ω, up to a level of ∼650 kV at a PRF of 1 Hz and 525 kV at a PRF of 5 Hz. We then conducted additional testing using the complete system driving a load of ∼100 Ω

  14. High resolution electron attachment to molecules of atmospheric relevance

    International Nuclear Information System (INIS)

    Senn, G.

    2000-10-01

    This Ph.D. thesis is divided into three parts. The first is an introduction into the field of electron attachment. In the second part the experimental apparatus is described, and in the third part the results are presented. In the present thesis molecules were chosen for our investigations that are not only of academic interest but that also play an important role for applications or even the life on this planet. All the molecules studied in this work are of atmospheric relevance. NO, and OClO, are involved in the ozone depletion of the stratosphere. The D-layer of the ionosphere is an upper boundary of the ozone layer, therefore the interaction of the electrons from the D-layer with O 3 might play an important role for the chemistry in that part of the atmosphere. Especially the interaction of slow electrons (that will be present in the D-layer in large numbers) with ozone was emphasized in the present study. The production of O - and O 2 - by dissociative electron attachment to ozone was measured for incident electron energies between 0 and 10eV. A previously unobserved sharp structure was discovered in the formation of O - ions for electrons with zero kinetic energy. This additional cross section peak has important consequences for the role of ozone in the anion formation process in the ionosphere. Since OClO is a night time reservoir for chlorine atoms (Cl) and chlorine monoxide (ClO) both of which play a critical role in the depletion of the stratospheric ozone, we have studied negative ion formation following electron impact (0-10eV) to OClO. Despite its atmospheric relevance the mechanism of dissociative electron attachment (DEA) to NO is still a matter of controversy. DEA was studied at high energy resolution and with a kinetic-energy analysis of the O - fragment in two independent crossed electron-molecular-beam experiments. The DEA cross section exhibits a vertical onset near 7.45eV that corresponds to the energy threshold of the DEA channel O - ( 2 P

  15. Possibility of some radionuclides production using high energy electron Bremsstrahlung

    International Nuclear Information System (INIS)

    Balzhinnyam, N.; Belov, A.G.; Gehrbish, Sh; Maslov, O.D.; Shvetsov, V.N.; Ganbold, G.

    2008-01-01

    The method of some radionuclides production using high energy Bremsstrahlung of electron accelerators and determination of photonuclear reaction yield and specific activities for some radionuclides is described. Photonuclear reaction yield and specific activities for some radionuclides are determined for 117m Sn, 111 In and 195m Pt. Based on the experimental data obtained at low energy (E e- e- = 75 MeV) of the IREN facility (FLNR, JINR) at irradiation of high purity platinum and tin metals

  16. Inclusive quasielastic and deep inelastic electron scattering at high energies

    International Nuclear Information System (INIS)

    Day, D.B.

    1990-01-01

    With high electron energies a kinematic regime can be reached where it will be possible to separate quasielastic and deep inelastic scattering. We present a short description of these processes which dominate the inclusive spectrum. Using the highest momentum transfer data available to guide our estimates, we give the kinematic requirements and the cross sections expected. These results indicate that inclusive scattering at high q has a yet unfilled potential. 18 refs., 13 figs

  17. The Physics and Applications of High Brightness Electron Beams

    Science.gov (United States)

    Palumbo, Luigi; Rosenzweig, J.; Serafini, Luca

    2007-09-01

    Plenary sessions. RF deflector based sub-Ps beam diagnostics: application to FEL and advanced accelerators / D. Alesini. Production of fermtosecond pulses and micron beam spots for high brightness electron beam applications / S.G. Anderson ... [et al.]. Wakefields of sub-picosecond electron bunches / K.L.F. Bane. Diamond secondary emitter / I. Ben-Zvi ... [et al.]. Parametric optimization for an X-ray free electron laser with a laser wiggler / R. Bonifacio, N. Piovella and M.M. Cola. Needle cathodes for high-brightness beams / C.H. Boulware ... [et al.]. Non linear evolution of short pulses in FEL cascaded undulators and the FEL harmonic cascade / L. Giannessi and P. Musumeci. High brightness laser induced multi-meV electron/proton sources / D. Giulietti ... [et al.]. Emittance limitation of a conditioned beam in a strong focusing FEL undulator / Z. Huang, G. Stupakov and S. Reiche. Scaled models: space-charge dominated electron storage rings / R.A. Kishek ... [et al.]. High brightness beam applications: energy recovered linacs / G.A. Krafft. Maximizing brightness in photoinjectors / C. Limborg-Deprey and H. Tomizawa. Ultracold electron sources / O.J. Luiten ... [et al.]. Scaling laws of structure-based optical accelerators / A. Mizrahi, V. Karagodsky and L. Schächter. High brightness beams-applications to free-electron lasers / S. Reiche. Conception of photo-injectors for the CTF3 experiment / R. Roux. Superconducting RF photoinjectors: an overview / J. Sekutowicz. Status and perspectives of photo injector developments for high brightness beams / F. Stephan. Results from the UCLA/FNLP underdense plasma lens experiment / M.C. Thompson ... [et al.]. Medical application of multi-beam compton scattering monochromatic tunable hard X-ray source / M. Uesaka ... [et al.]. Design of a 2 kA, 30 fs RF-photoinjector for waterbag compression / S.B. Van Der Geer, O.J. Luiten and M.J. De Loos. Proposal for a high-brightness pulsed electron source / M. Zolotorev ... [et al

  18. High-pressure electron-resonance studies of electronic, magnetic, and structural phase transitions. Progress report

    International Nuclear Information System (INIS)

    Pifer, J.H.; Croft, M.C.

    1983-01-01

    Research is described in development of a high-pressure electron-resonance probe capable of operating down to 1.5 0 K temperatures. The apparatus has been used to measure the EPR of a sample of DPPH at room temperature and zero pressure. EPR has been used to measure valence field instabilities in alloy systems. Studies have been done on metal-insulator transitions at high pressure, and are briefly described

  19. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor

    Science.gov (United States)

    Jiang, Chunyan; Liu, Ting; Du, Chunhua; Huang, Xin; Liu, Mengmeng; Zhao, Zhenfu; Li, Linxuan; Pu, Xiong; Zhai, Junyi; Hu, Weiguo; Wang, Zhong Lin

    2017-11-01

    The piezotronic effect utilizes strain-induced piezoelectric polarization charges to tune the carrier transportation across the interface/junction. We fabricated a high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the transport property was proven to be enhanced by applying an external stress for the first time. The enhanced source-drain current was also observed at any gate voltage and the maximum enhancement of the saturation current was up to 21% with 15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical mechanism of HEMT with/without external compressive stress conditions was carefully illustrated and further confirmed by a self-consistent solution of the Schrödinger-Poisson equations. This study proves the cause-and-effect relationship between the piezoelectric polarization effect and 2D electron gas formation, which provides a tunable solution to enhance the device performance. The strain tuned HEMT has potential applications in human-machine interface and the security control of the power system.

  20. Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

    2015-01-28

    The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

  1. Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    Elleuch, Omar; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2015-01-01

    The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor

  2. Survey on neutron production by electron beam from high power CW electron linear accelerator

    International Nuclear Information System (INIS)

    Toyama, S.

    1999-04-01

    In Japan Nuclear Cycle Development Institute, the development of high current CW electron linear accelerator is in progress. It is possible for an accelerator to produce neutrons by means of a spallation and photo nuclear reactions. Application of neutron beam produced by bremsstrahlung is one of ways of the utilization for high current electron accelerator. It is actual that many electron linear accelerators which maximum energy is higher than a few hundreds MeV are used as neutron sources. In this report, an estimate of neutron production is evaluated for high current CW electron linear accelerator. The estimate is carried out by 10 MeV beam which is maximum energy limited from the regulation and rather low for neutron production. Therefore, the estimate is also done by 17 and 35 MeV beam which is possible to be accelerated. Beryllium is considered as a target for lower electron energy in addition to Lead target for higher energy, because Beryllium has low threshold energy for neutron production. The evaluation is carried out in account of the target thickness optimized by the radiation length and neutron cross section reducing the energy loss for both of electron and neutron, so as to get the maximum number of neutrons. The result of the calculations shows neutron numbers 1.9 x 10 10 , 6.1 x 10 13 and 4.8 x 10 13 (n/s), respectively, for 10, 17, and 35 MeV with low duty. The thermal removal from the target is one of critical points. The additional shielding and cooling system is necessary in order to endure radiation. A comparison with other facilities are also carried out. The estimate of neutron numbers suggests the possibility to be applied for neutron radiography and measurement of nuclear data by means of Lead spectrometer, for example. (author)

  3. Aircraft Carriers

    DEFF Research Database (Denmark)

    Nødskov, Kim; Kværnø, Ole

    as their purchases of aircraft carrier systems, makes it more than likely that the country is preparing such an acquisition. China has territorial disputes in the South China Sea over the Spratly Islands and is also worried about the security of its sea lines of communications, by which China transports the majority......, submarines, aircraft and helicopters, is not likely to be fully operational and war-capable until 2020, given the fact that China is starting from a clean sheet of paper. The United States of America (USA), the United Kingdom (UK), Russia and India are currently building or have made decisions to build new...

  4. High speed electronic imaging application in aeroballistic research

    International Nuclear Information System (INIS)

    Brown, R.R.; Parker, J.R.

    1984-01-01

    Physical and temporal restrictions imposed by modern aeroballistics have pushed imaging technology to the point where special photoconductive surfaces and high-speed support electronics are dictated. Specifications for these devices can be formulated by a methodical analysis of critical parameters and how they interact. In terms of system theory, system transfer functions and state equations can be used in optimal coupling of devices to maximize system performance. Application of these methods to electronic imaging at the Eglin Aeroballistics Research Facility is described in this report. 7 references, 14 figures, 1 table

  5. High-Energy Electron Beam Application to Air Pollutants Removal

    International Nuclear Information System (INIS)

    Ighigeanu, D.; Martin, D.; Manaila, E.; Craciun, G.; Calinescu, I.

    2009-01-01

    The advantage of electron beam (EB) process in pollutants removal is connected to its high efficiency to transfer high amount of energy directly into the matter under treatment. Disadvantage which is mostly related to high investment cost of accelerator may be effectively overcome in future as the result of use accelerator new developments. The potential use of medium to high-energy high power EB accelerators for air pollutants removal is demonstrated in [1]. The lower electrical efficiencies of accelerators with higher energies are partially compensated by the lower electron energy losses in the beam windows. In addition, accelerators with higher electron energies can provide higher beam powers with lower beam currents [1]. The total EB energy losses (backscattering, windows and in the intervening air space) are substantially lower with higher EB incident energy. The useful EB energy is under 50% for 0.5 MeV and about 95% above 3 MeV. In view of these arguments we decided to study the application of high energy EB for air pollutants removal. Two electron beam accelerators are available for our studies: electron linear accelerators ALIN-10 and ALID-7, built in the Electron Accelerator Laboratory, INFLPR, Bucharest, Romania. Both accelerators are of traveling-wave type, operating at a wavelength of 10 cm. They utilize tunable S-band magnetrons, EEV M 5125 type, delivering 2 MW of power in 4 μ pulses. The accelerating structure is a disk-loaded tube operating in the 2 mode. The optimum values of the EB peak current IEB and EB energy EEB to produce maximum output power PEB for a fixed pulse duration EB and repetition frequency fEB are as follows: for ALIN-10: EEB = 6.23 MeV; IEB =75 mA; PEB 164 W (fEB = 100 Hz, EB = 3.5 s) and for ALID-7: EEB 5.5 MeV; IEB = 130 mA; PEB = 670 W (fEB = 250 Hz, EB = 3.75 s). This paper presents a special designed installation, named SDI-1, and several representative results obtained by high energy EB application to SO 2 , NOx and VOCs

  6. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    International Nuclear Information System (INIS)

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-01-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  7. High quality electron beams from a laser wakefield accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Wiggins, S M; Issac, R C; Welsh, G H; Brunetti, E; Shanks, R P; Anania, M P; Cipiccia, S; Manahan, G G; Aniculaesei, C; Ersfeld, B; Islam, M R; Burgess, R T L; Vieux, G; Jaroszynski, D A [SUPA, Department of Physics, University of Strathclyde, Glasgow (United Kingdom); Gillespie, W A [SUPA, Division of Electronic Engineering and Physics, University of Dundee, Dundee (United Kingdom); MacLeod, A M [School of Computing and Creative Technologies, University of Abertay Dundee, Dundee (United Kingdom); Van der Geer, S B; De Loos, M J, E-mail: m.wiggins@phys.strath.ac.u [Pulsar Physics, Burghstraat 47, 5614 BC Eindhoven (Netherlands)

    2010-12-15

    High quality electron beams have been produced in a laser-plasma accelerator driven by femtosecond laser pulses with a peak power of 26 TW. Electrons are produced with an energy up to 150 MeV from the 2 mm gas jet accelerator and the measured rms relative energy spread is less than 1%. Shot-to-shot stability in the central energy is 3%. Pepper-pot measurements have shown that the normalized transverse emittance is {approx}1{pi} mm mrad while the beam charge is in the range 2-10 pC. The generation of high quality electron beams is understood from simulations accounting for beam loading of the wakefield accelerating structure. Experiments and self-consistent simulations indicate that the beam peak current is several kiloamperes. Efficient transportation of the beam through an undulator is simulated and progress is being made towards the realization of a compact, high peak brilliance free-electron laser operating in the vacuum ultraviolet and soft x-ray wavelength ranges.

  8. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    International Nuclear Information System (INIS)

    Ai-Fang, Yu; Qiong, Qi; Peng, Jiang; Chao, Jiang

    2009-01-01

    Carrier mobility enhancement from 0.09 to 0.59 cm 2 /Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO 2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO 2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO 2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski–Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility. (cross-disciplinary physics and related areas of science and technology)

  9. A high-energy electron beam ion trap for production of high-charge high-Z ions

    International Nuclear Information System (INIS)

    Knapp, D.A.; Marrs, R.E.; Elliott, S.R.; Magee, E.W.; Zasadzinski, R.

    1993-01-01

    We have developed a new high-energy electron beam ion trap, the first laboratory source of low-energy, few-electron, high-Z ions. We describe the device and report measurements of its performance, including the electron beam diameter, current density and energy, and measurements of the ionization balance for several high-Z elements in the trap. This device opens up a wide range of possible experiments in atomic physics, plasma physics, and nuclear physics. (orig.)

  10. Research of the Electron Cyclotron Emission with Vortex Property excited by high power high frequency Gyrotron

    Science.gov (United States)

    Goto, Yuki; Kubo, Shin; Tsujimura, Tohru; Takubo, Hidenori

    2017-10-01

    Recently, it has been shown that the radiation from a single electron in cyclotron motion has vortex property. Although the cyclotron emission exists universally in nature, the vortex property has not been featured because this property is normally cancelled out due to the randomness in gyro-phase of electrons and the development of detection of the vortex property has not been well motivated. In this research, we are developing a method to generate the vortex radiation from electrons in cyclotron motion with controlled gyro-phase. Electron that rotates around the uniform static magnetic field is accelerated by right-hand circular polarized (RHCP) radiation resonantly when the cyclotron frequency coincides with the applied RHCP radiation frequency. A large number of electrons can be coherently accelerated in gyro-phase by a RHCP high power radiation so that these electrons can radiate coherent emission with vortex feature. We will show that vortex radiation created by purely rotating electrons for the first time.

  11. GUI Application for ATCA-based LLRF Carrier Board Management

    CERN Document Server

    Wychowaniak, Jan; Predki, Pawel; Napieralski, Andrzej

    2011-01-01

    The Advanced Telecommunications Computing Architecture (ATCA) standard describes an efficient and powerful platform, implementation of which was adopted to be used as a base for control systems in high energy physics. The ATCA platform is considered to be applied for the X-ray Free Electron Laser (X-FEL), being built at Deutsches Electronen- Synchrotron (DESY) in Hamburg, Germany. The Low Level Radio Frequency (LLRF) control system is composed of a few ATCA Carrier Boards. Carrier Board hosts Intelligent Platform Management Controller (IPMC), which is developed in compliance with the PICMG specifications. IPMC is responsible for management and monitoring of sub-modules installed on Carrier Boards and pluggable Advanced Mezzanine Card (AMC) modules. The ATCA Shelf Manager is the main control unit of a single ATCA crate, responsible for all power and fan modules and Carrier Boards installed in ATCA shelf. The device provides a system administrator with a set of control and diagnostic capabilities regarding the ...

  12. Potential ceramics processing applications with high-energy electron beams

    International Nuclear Information System (INIS)

    Struve, K.W.; Turman, B.N.

    1993-01-01

    High-energy, high-current electron beams may offer unique features for processing of ceramics that are not available with any other heat source. These include the capability to instantaneously heat to several centimeters in depth, to preferentially deposit energy in dense, high-z materials, to process at atmospheric pressures in air or other gases, to have large control over heating volume and heating rate, and to have efficient energy conversion. At a recent workshop organized by the authors to explore opportunities for electron beam processing of ceramics, several applications were identified for further development. These were ceramic joining, fabrication of ceramic powders, and surface processing of ceramics. It may be possible to join ceramics by either electron-beam brazing or welding. Brazing with refractory metals might also be feasible. The primary concern for brazing is whether the braze material can wet to the ceramic when rapidly heated by an electron beam. Raw ceramic powders, such as silicon nitride and aluminum nitride, which are difficult to produce by conventional techniques, could possibly be produced by vaporizing metals in a nitrogen atmosphere. Experiments need to be done to verify that the vaporized metal can fully react with the nitrogen. By adjusting beam parameters, high-energy beams can be used to remove surface flaws which are often sites of fracture initiation. They can also be used for surface cleaning. The advantage of electron beams rather than ion beams for this application is that the heat deposition can be graded into the material. The authors will discuss the capabilities of beams from existing machines for these applications and discuss planned experiments

  13. LIQUIFIED NATURAL GAS (LNG CARRIERS

    Directory of Open Access Journals (Sweden)

    Daniel Posavec

    2010-12-01

    Full Text Available Modern liquefied natural gas carriers are double-bottom ships classified according to the type of LNG tank. The tanks are specially designed to store natural gas cooled to -161°C, the boiling point of methane. Since LNG is highly flammable, special care must be taken when designing and operating the ship. The development of LNG carriers has begun in the middle of the twentieth century. LNG carrier storage space has gradually grown to the current maximum of 260000 m3. There are more than 300 LNG carriers currently in operation (the paper is published in Croatian.

  14. Signature of electron-phonon interaction in high temperature superconductors

    Directory of Open Access Journals (Sweden)

    Vinod Ashokan

    2011-09-01

    Full Text Available The theory of thermal conductivity of high temperature superconductors (HTS based on electron and phonon line width (life times formulation is developed with Quantum dynamical approach of Green's function. The frequency line width is observed as an extremely sensitive quantity in the transport phenomena of HTS as a collection of large number of scattering processes. The role of resonance scattering and electron-phonon interaction processes is found to be most prominent near critical temperature. The theory successfully explains the spectacular behaviour of high Tc superconductors in the vicinity of transition temperature. A successful agreement between theory and experiment has been obtained by analyzing the thermal conductivity data for the sample La1.8Sr0.2CuO4 in the temperature range 0 − 200K. The theory is equally and successfully applicable to all other high Tc superconductors.

  15. High-brightness electron source driven by laser

    International Nuclear Information System (INIS)

    Zhao Kui; Geng Rongli; Wang Lifang

    1996-01-01

    A DC high-brightness laser driven by photo emissive electron gun is being developed at Beijing University, in order to produce 50∼100 ps electron bunches of high quality. The gun consists of a photocathode preparation chamber and a DC acceleration cavity. Different ways of fabricating photocathode, such as chemical vapor deposition, ion beam implantation and ion beam enhanced deposition, can be adopted. The acceleration gap is designed with the aid of simulation codes EGUN and POISSON. 100 kV DC high voltage is fed to the anode through a careful designed ceramic insulator. The laser system is a mode locked Nd-YAG oscillator proceeded by an amplifier at 10 Hz repetition rate, which can deliver three different wavelength (1064/532/266 nm). The combination of a superconducting cavity with the photocathode preparation chamber is discussed

  16. Highly n-Type Titanium Oxide as an Electronically Active Support for Platinum in the Catalytic Oxidation of Carbon Monoxide

    KAUST Repository

    Baker, L. Robert

    2011-08-18

    The role of the oxide-metal interface in determining the activity and selectivity of chemical reactions catalyzed by metal particles on an oxide support is an important topic in science and industry. A proposed mechanism for this strong metal-support interaction is electronic activation of surface adsorbates by charge carriers. Motivated by the goal of using electronic activation to drive nonthermal chemistry, we investigated the ability of the oxide support to mediate charge transfer. We report an approximately 2-fold increase in the turnover rate of catalytic carbon monoxide oxidation on platinum nanoparticles supported on stoichiometric titanium dioxide (TiO2) when the TiO2 is made highly n-type by fluorine (F) doping. However, for nonstoichiometric titanium oxide (TiOX<2) the effect of F on the turnover rate is negligible. Studies of the titanium oxide electronic structure show that the energy of free electrons in the oxide determines the rate of reaction. These results suggest that highly n-type TiO2 electronically activates adsorbed oxygen (O) by electron spillover to form an active O- intermediate. © 2011 American Chemical Society.

  17. Research on high performance mirrors for free electron lasers

    International Nuclear Information System (INIS)

    Kitatani, Fumito

    1996-01-01

    For the stable functioning of free electron laser, high performance optical elements are required because of its characteristics. In particular in short wavelength free electron laser, since its gain is low, the optical elements having very high reflectivity are required. Also in free electron laser, since high energy noise light exists, the optical elements must have high optical breaking strength. At present in Power Reactor and Nuclear Fuel Development Corporation, the research for heightening the performance of dielectric multi-layer film elements for short wavelength is carried out. For manufacturing such high performance elements, it is necessary to develop the new materials for vapor deposition, new vapor deposition process, and the techniques of accurate substrate polishing and inspection. As the material that satisfies the requirements, there is diamond-like carbon (DLC) film, of which the properties are explained. As for the manufacture of the DLC films for short wavelength optics, the test equipment for forming the DLC films, the test of forming the DLC films, the change of the film quality due to gas conditions, discharge conditions and substrate materials, and the measurement of the optical breaking strength are reported. (K.I.)

  18. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.

    Science.gov (United States)

    Heo, Cheon; Jang, Jongjin; Lee, Kyngjae; So, Byungchan; Lee, Kyungbae; Ko, Kwangse; Nam, Okhyun

    2017-01-01

    We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm²/V·s and 3.23 × 10¹³ cm⁻², respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.

  19. Patterning of high mobility electron gases at complex oxide interfaces

    DEFF Research Database (Denmark)

    Trier, Felix; Prawiroatmodjo, G. E. D. K.; von Soosten, Merlin

    2015-01-01

    Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects...... of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually...... where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching...

  20. High energy electron disinfection of sewage wastewater in flow systems

    Energy Technology Data Exchange (ETDEWEB)

    Miyata, T; Arai, H; Hosono, M; Tokunaga, O; Machi, S [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Kondoh, M; Minemura, T; Nakao, A; Seike, Y [Sumitomo Heavy Industries Ltd., Tokyo (Japan)

    1990-01-01

    The disinfection of effluent municipal wastewaters by high-energy electrons in flow systems was studied using an experimental apparatus which has the maximum treatment capacity of 10.8 m{sup 3}/h. An electron accelerator with an accelerating voltage of 2 MV was used. The electron beam current was controlled to deliver the desired doses ranging from 0.05 to 1 kGy. Treatment times were in the range from 0.0022 to 0.051 s. Preliminary experiments with batch system using Petri dish of 100 ml showed that the effectiveness of electron irradiation on inactivation of coliforms was not influenced significantly by factors such as pH, SS, COD, DO and irradiation temperature. The dose required to produce 99.9% kill in the total population presented in wastewater were markedly affected by the thickness of water exposure to electron irradiation; that is, 0.39, 0.4 and 0.44 kGy for the depth of 5, 6 and 7 mm, respectively. The data obtained after a suitable correction for the doses due to the depth dose distribution showed no deviation from an experimental survival curve. Experiments with flow system indicated no measureable effect of the flow rate of wastewaters on the efficiency of disinfection in the range from 0.5 to 3.5 m/s. (author).

  1. Polyelectrolyte-based electrochemiluminescence enhancement for Ru(bpy){sub 3}{sup 2+} loaded by SiO{sub 2} nanoparticle carrier and its high sensitive immunoassay

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Zhi-Li; Song, Tian-Mei; Chen, Zhe [College of Pharmaceutical Science, Soochow University, Suzhou 215123 (China); Guo, Wu-Run [College of Pharmaceutical Science, Soochow University, Suzhou 215123 (China); College of Chemistry and Chemical Engineering, China West Normal University, Nanchong 637002 (China); Xie, Hong-Ping, E-mail: hpxie@suda.edu.cn [College of Pharmaceutical Science, Soochow University, Suzhou 215123 (China); Xie, Lian, E-mail: xielian@suda.edu.cn [College of Pharmaceutical Science, Soochow University, Suzhou 215123 (China)

    2015-03-03

    Highlights: • Preparation of strong ECL nanoparticles PAA–Ru@SiO{sub 2}/[PAA⋯Ru&Nafion⋯Ru]. • Ion-pair macromolecule PAA–Ru formed to greatly increase the doping amount. • PAA&Nafion membrane increased the amount of ion-exchanged Ru(bpy){sub 3}{sup 2+}. • PAA&Nafion membrane enhanced the ability of electron transfer. • Realized antibody labeling and established a high-sensitive immunoassay. - Abstract: In this paper the strong electrochemiluminescence (ECL) nanoparticles have been prepared based on the anionic polyelectrolyte sodium polyacrylate (PAA)-ECL enhancement for Ru(bpy){sub 3}{sup 2+}, which were loaded by the carrier of SiO{sub 2} nanoparticle. There were two kinds of Ru(bpy){sub 3}{sup 2+} for the as-prepared nanoparticles, the doped one and the exchanged one. The former was loaded inside the ECL nanoparticles by doping, in a form of ion-pair macromolecules PAA–Ru(bpy){sub 3}{sup 2+}. The corresponding ECL was enhanced about 2 times owing to the doping increase of Ru(bpy){sub 3}{sup 2+}. The latter was loaded on the PAA-doped Nafion membrane by ion exchange. The corresponding ECL was enhanced about 3 times owing to the ion-exchanging increase of Ru(bpy){sub 3}{sup 2+}. At the same time, ECL intensity of the doped-inside Ru(bpy){sub 3}{sup 2+} was further enhanced 13 times because polyelectrolyte PAA in the doped membrane could obviously enhance electron transfer between the doped Ru(bpy){sub 3}{sup 2+} and the working electrode. Furthermore, based on hydrophobic regions of the doped membrane antibody labeling could be easily realized by the as-prepared nanoparticles and then a high sensitive ECL immunoassay for HBsAg was developed. The linear range was between 1.0 and 100 pg mL{sup −1} (R{sup 2} = 0.9912). The detection limit could be as low as 0.11 pg mL{sup −1} (signal-to-noise ratio = 3)

  2. Efficient temporal shaping of electron distributions for high-brightness photoemission electron guns

    Directory of Open Access Journals (Sweden)

    Ivan V. Bazarov

    2008-04-01

    Full Text Available To achieve the lowest emittance electron bunches from photoemission electron guns, it is essential to limit the uncorrelated emittance growth due to space charge forces acting on the bunch in the vicinity of the photocathode through appropriate temporal shaping of the optical pulses illuminating the photocathode. We present measurements of the temporal profile of electron bunches from a bulk crystal GaAs photocathode illuminated with 520 nm wavelength pulses from a frequency-doubled Yb-fiber laser. A transverse deflecting rf cavity was used to make these measurements. The measured laser pulse temporal profile and the corresponding electron beam temporal profile have about 30 ps FWHM duration, with rise and fall times of a few ps. GaAs illuminated by 520 nm optical pulses is a prompt emitter within our measurement uncertainty of ∼1  ps rms. Combined with the low thermal emittance of negative electron affinity photocathodes, GaAs is a very suitable photocathode for high-brightness photoinjectors. We also report measurements of the photoemission response time for GaAsP, which show a strong dependence on the quantum efficiency of the photocathode.

  3. Polaron-electron assisted giant dielectric dispersion in SrZrO{sub 3} high-k dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Borkar, Hitesh; Barvat, Arun; Pal, Prabir; Kumar, Ashok, E-mail: ashok553@nplindia.org [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Shukla, A. K. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Pulikkotil, J. J. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Computation and Networking Facility, CSIR-National Physical Laboratory, New Delhi 110012 (India)

    2016-06-07

    The SrZrO{sub 3} is a well known high-k dielectric constant (∼22) and high optical bandgap (∼5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (T{sub e}) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction. X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O{sup 2−} anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO{sub 6} octahedral angle in the temperature range of 650–750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.

  4. High-current electron accelerator for gas-laser pumping

    Energy Technology Data Exchange (ETDEWEB)

    Badaliants, G R; Mamikonian, V A; Nersisian, G Ts; Papanian, V O

    1978-11-26

    A high-current source of pulsed electron beams has been developed for the pumping of UV gas lasers. The parameters of the device are: energy of 0.3-0.7 MeV pulse duration of 30 ns and current density (in a high-pressure laser chamber) of 40-100 A/sq cm. The principal feature of the device is the use of a rectangular cold cathode with incomplete discharge along the surface of the high-permittivity dielectric. Cathodes made of stainless steel, copper, and graphite were investigated.

  5. High performance protection circuit for power electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Tudoran, Cristian D., E-mail: cristian.tudoran@itim-cj.ro; Dădârlat, Dorin N.; Toşa, Nicoleta; Mişan, Ioan [National Institute for Research and Development of Isotopic and Molecular Technologies, 67-103 Donat, PO 5 Box 700, 400293 Cluj-Napoca (Romania)

    2015-12-23

    In this paper we present a high performance protection circuit designed for the power electronics applications where the load currents can increase rapidly and exceed the maximum allowed values, like in the case of high frequency induction heating inverters or high frequency plasma generators. The protection circuit is based on a microcontroller and can be adapted for use on single-phase or three-phase power systems. Its versatility comes from the fact that the circuit can communicate with the protected system, having the role of a “sensor” or it can interrupt the power supply for protection, in this case functioning as an external, independent protection circuit.

  6. High-frequency conductivity of optically excited charge carriers in hydrogenated nanocrystalline silicon investigated by spectroscopic femtosecond pump–probe reflectivity measurements

    Energy Technology Data Exchange (ETDEWEB)

    He, Wei [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Yurkevich, Igor V. [Aston University, Nonlinearity and Complexity Research Group, Birmingham B4 7ET (United Kingdom); Zakar, Ammar [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom); Kaplan, Andrey, E-mail: a.kaplan.1@bham.ac.uk [University of Birmingham, School of Physics and Astronomy, Birmingham B15 2TT (United Kingdom)

    2015-10-01

    We report an investigation into the high-frequency conductivity of optically excited charge carriers far from equilibrium with the lattice. The investigated samples consist of hydrogenated nanocrystalline silicon films grown on a thin film of silicon oxide on top of a silicon substrate. For the investigation, we used an optical femtosecond pump–probe setup to measure the reflectance change of a probe beam. The pump beam ranged between 580 and 820 nm, whereas the probe wavelength spanned 770 to 810 nm. The pump fluence was fixed at 0.6 mJ/cm{sup 2}. We show that at a fixed delay time of 300 fs, the conductivity of the excited electron–hole plasma is described well by a classical conductivity model of a hot charge carrier gas found at Maxwell–Boltzmann distribution, while Fermi–Dirac statics is not suitable. This is corroborated by values retrieved from pump–probe reflectance measurements of the conductivity and its dependence on the excitation wavelength and carrier temperature. The conductivity decreases monotonically as a function of the excitation wavelength, as expected for a nondegenerate charge carrier gas. - Highlights: • We study high‐frequency conductivity of excited hydrogenated nanocrystalline silicon. • Reflectance change was measured as a function of pump and probe wavelength. • Maxwell–Boltzmann transport theory was used to retrieve the conductivity. • The conductivity decreases monotonically as a function of the pump wavelength.

  7. Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

    Science.gov (United States)

    Fishchuk, I. I.; Kadashchuk, A.; Bhoolokam, A.; de Jamblinne de Meux, A.; Pourtois, G.; Gavrilyuk, M. M.; Köhler, A.; Bässler, H.; Heremans, P.; Genoe, J.

    2016-05-01

    We suggest an analytic theory based on the effective medium approximation (EMA) which is able to describe charge-carrier transport in a disordered semiconductor with a significant degree of degeneration realized at high carrier concentrations, especially relevant in some thin-film transistors (TFTs), when the Fermi level is very close to the conduction-band edge. The EMA model is based on special averaging of the Fermi-Dirac carrier distributions using a suitably normalized cumulative density-of-state distribution that includes both delocalized states and the localized states. The principal advantage of the present model is its ability to describe universally effective drift and Hall mobility in heterogeneous materials as a function of disorder, temperature, and carrier concentration within the same theoretical formalism. It also bridges a gap between hopping and bandlike transport in an energetically heterogeneous system. The key assumption of the model is that the charge carriers move through delocalized states and that, in addition to the tail of the localized states, the disorder can give rise to spatial energy variation of the transport-band edge being described by a Gaussian distribution. It can explain a puzzling observation of activated and carrier-concentration-dependent Hall mobility in a disordered system featuring an ideal Hall effect. The present model has been successfully applied to describe experimental results on the charge transport measured in an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO). In particular, the model reproduces well both the conventional Meyer-Neldel (MN) compensation behavior for the charge-carrier mobility and inverse-MN effect for the conductivity observed in the same a-IGZO TFT. The model was further supported by ab initio calculations revealing that the amorphization of IGZO gives rise to variation of the conduction-band edge rather than to the creation of localized states. The obtained changes agree with the one we

  8. Frontend electronics for high-precision single photo-electron timing using FPGA-TDCs

    Science.gov (United States)

    Cardinali, M.; Dzyhgadlo, R.; Gerhardt, A.; Götzen, K.; Hohler, R.; Kalicy, G.; Kumawat, H.; Lehmann, D.; Lewandowski, B.; Patsyuk, M.; Peters, K.; Schepers, G.; Schmitt, L.; Schwarz, C.; Schwiening, J.; Traxler, M.; Ugur, C.; Zühlsdorf, M.; Dodokhov, V. Kh.; Britting, A.; Eyrich, W.; Lehmann, A.; Uhlig, F.; Düren, M.; Föhl, K.; Hayrapetyan, A.; Kröck, B.; Merle, O.; Rieke, J.; Cowie, E.; Keri, T.; Montgomery, R.; Rosner, G.; Achenbach, P.; Corell, O.; Ferretti Bondy, M. I.; Hoek, M.; Lauth, W.; Rosner, C.; Sfienti, C.; Thiel, M.; Bühler, P.; Gruber, L.; Marton, J.; Suzuki, K.

    2014-12-01

    The next generation of high-luminosity experiments requires excellent particle identification detectors which calls for Imaging Cherenkov counters with fast electronics to cope with the expected hit rates. A Barrel DIRC will be used in the central region of the Target Spectrometer of the planned PANDA experiment at FAIR. A single photo-electron timing resolution of better than 100 ps is required by the Barrel DIRC to disentangle the complicated patterns created on the image plane. R&D studies have been performed to provide a design based on the TRB3 readout using FPGA-TDCs with a precision better than 20 ps RMS and custom frontend electronics with high-bandwidth pre-amplifiers and fast discriminators. The discriminators also provide time-over-threshold information thus enabling walk corrections to improve the timing resolution. Two types of frontend electronics cards optimised for reading out 64-channel PHOTONIS Planacon MCP-PMTs were tested: one based on the NINO ASIC and the other, called PADIWA, on FPGA discriminators. Promising results were obtained in a full characterisation using a fast laser setup and in a test experiment at MAMI, Mainz, with a small scale DIRC prototype.

  9. APES: Acute Precipitating Electron Spectrometer - A High Time Resolution Monodirectional Magnetic Deflection Electron Spectrometer

    Science.gov (United States)

    Michell, R. G.; Samara, M.; Grubbs, G., II; Ogasawara, K.; Miller, G.; Trevino, J. A.; Webster, J.; Stange, J.

    2016-01-01

    We present a description of the Acute Precipitating Electron Spectrometer (APES) that was designed and built for the Ground-to-Rocket Electron Electrodynamics Correlative Experiment (GREECE) auroral sounding rocket mission. The purpose was to measure the precipitating electron spectrum with high time resolution, on the order of milliseconds. The trade-off made in order to achieve high time resolution was to limit the aperture to only one look direction. The energy selection was done by using a permanent magnet to separate the incoming electrons, such that the different energies would fall onto different regions of the microchannel plate and therefore be detected by different anodes. A rectangular microchannel plate (MCP) was used (15 mm x 100 mm), and there was a total of 50 discrete anodes under the MCP, each one 15 mm x 1.5 mm, with a 0.5 mm spacing between anodes. The target energy range of APES was 200 eV to 30 keV.

  10. High-energy electron beams for ceramic joining

    Science.gov (United States)

    Turman, Bob N.; Glass, S. J.; Halbleib, J. A.; Helmich, D. R.; Loehman, Ron E.; Clifford, Jerome R.

    1995-03-01

    Joining of structural ceramics is possible using high melting point metals such as Mo and Pt that are heated with a high energy electron beam, with the potential for high temperature joining. A 10 MeV electron beam can penetrate through 1 cm of ceramic, offering the possibility of buried interface joining. Because of transient heating and the lower heat capacity of the metal relative to the ceramic, a pulsed high power beam has the potential for melting the metal without decomposing or melting the ceramic. We have demonstrated the feasibility of the process with a series of 10 MeV, 1 kW electron beam experiments. Shear strengths up to 28 MPa have been measured. This strength is comparable to that reported in the literature for bonding silicon nitride (Si3N4) to molybdenum with copper-silver-titanium braze, but weaker than that reported for Si3N4 - Si3N4 with gold-nickel braze. The bonding mechanism appears to be formation of a thin silicide layer. Beam damage to the Si3N4 was also assessed.

  11. Feasibility of ceramic joining with high energy electron beams

    International Nuclear Information System (INIS)

    Turman, B.N.; Glass, S.J.; Halbleib, J.A.; Helmich, D.R.; Loehman, R.E.; Clifford, J.R.

    1995-01-01

    Joining structural ceramics is possible using high melting point metals such as Mo and Pt that are heated with a high energy electron beam, with the potential for producing joints with high temperature capability. A 10 MeV electron beam can penetrate through 1 cm of ceramic, offering the possibility of buried interface joining. Because of transient heating and the lower heat capacity of the metal relative to the ceramic, a pulsed high power beam has the potential for melting the metal without decomposing or melting the adjacent ceramic. The authors have demonstrated the feasibility of the process with a series of 10 MeV, 1 kW electron beam experiments. Shear strengths up to 28 NTa have been measured for Si 3 N 4 -Mo-Si 3 N 4 . These modest strengths are due to beam non-uniformity and the limited area of bonding. The bonding mechanism appears to be a thin silicide reaction layer. Si 3 N 4 -Si 3 N 4 joints with no metal layer were also produced, apparently bonded an yttrium apatite grain boundary phase

  12. Electronics and triggering challenges for the CMS High Granularity Calorimeter

    CERN Document Server

    Lobanov, Artur

    2017-01-01

    The High Granularity Calorimeter (HGCAL), presently being designed by the CMS collaboration to replace the CMS endcap calorimeters for the High Luminosity phase of LHC, will feature six million channels distributed over 52 longitudinal layers. The requirements for the front-end electronics are extremely challenging, including high dynamic range (0-10 pC), low noise (~2000e- to be able to calibrate on single minimum ionising particles throughout the detector lifetime) and low power consumption (~10mW/channel), as well as the need to select and transmit trigger information with a high granularity. Exploiting the intrinsic precision-timing capabilities of silicon sensors also requires careful design of the front-end electronics as well as the whole system, particularly clock distribution. The harsh radiation environment and requirement to keep the whole detector as dense as possible will require novel solutions to the on-detector electronics layout. Processing all the data from the HGCAL imposes equally large ch...

  13. Relativistic electron mirrors from high intensity laser nanofoil interactions

    International Nuclear Information System (INIS)

    Kiefer, Daniel

    2012-01-01

    The reflection of a laser pulse from a mirror moving close to the speed of light could in principle create an X-ray pulse with unprecedented high brightness owing to the increase in photon energy and accompanying temporal compression by a factor of 4γ 2 , where γ is the Lorentz factor of the mirror. While this scheme is theoretically intriguingly simple and was first discussed by A. Einstein more than a century ago, the generation of a relativistic structure which acts as a mirror is demanding in many different aspects. Recently, the interaction of a high intensity laser pulse with a nanometer thin foil has raised great interest as it promises the creation of a dense, attosecond short, relativistic electron bunch capable of forming a mirror structure that scatters counter-propagating light coherently and shifts its frequency to higher photon energies. However, so far, this novel concept has been discussed only in theoretical studies using highly idealized interaction parameters. This thesis investigates the generation of a relativistic electron mirror from a nanometer foil with current state-of-the-art high intensity laser pulses and demonstrates for the first time the reflection from those structures in an experiment. To achieve this result, the electron acceleration from high intensity laser nanometer foil interactions was studied in a series of experiments using three inherently different high power laser systems and free-standing foils as thin as 3nm. A drastic increase in the electron energies was observed when reducing the target thickness from the micrometer to the nanometer scale. Quasi-monoenergetic electron beams were measured for the first time from ultrathin (≤5nm) foils, reaching energies up to ∝35MeV. The acceleration process was studied in simulations well-adapted to the experiments, indicating the transition from plasma to free electron dynamics as the target thickness is reduced to the few nanometer range. The experience gained from those

  14. Relativistic electron mirrors from high intensity laser nanofoil interactions

    Energy Technology Data Exchange (ETDEWEB)

    Kiefer, Daniel

    2012-12-21

    The reflection of a laser pulse from a mirror moving close to the speed of light could in principle create an X-ray pulse with unprecedented high brightness owing to the increase in photon energy and accompanying temporal compression by a factor of 4γ{sup 2}, where γ is the Lorentz factor of the mirror. While this scheme is theoretically intriguingly simple and was first discussed by A. Einstein more than a century ago, the generation of a relativistic structure which acts as a mirror is demanding in many different aspects. Recently, the interaction of a high intensity laser pulse with a nanometer thin foil has raised great interest as it promises the creation of a dense, attosecond short, relativistic electron bunch capable of forming a mirror structure that scatters counter-propagating light coherently and shifts its frequency to higher photon energies. However, so far, this novel concept has been discussed only in theoretical studies using highly idealized interaction parameters. This thesis investigates the generation of a relativistic electron mirror from a nanometer foil with current state-of-the-art high intensity laser pulses and demonstrates for the first time the reflection from those structures in an experiment. To achieve this result, the electron acceleration from high intensity laser nanometer foil interactions was studied in a series of experiments using three inherently different high power laser systems and free-standing foils as thin as 3nm. A drastic increase in the electron energies was observed when reducing the target thickness from the micrometer to the nanometer scale. Quasi-monoenergetic electron beams were measured for the first time from ultrathin (≤5nm) foils, reaching energies up to ∝35MeV. The acceleration process was studied in simulations well-adapted to the experiments, indicating the transition from plasma to free electron dynamics as the target thickness is reduced to the few nanometer range. The experience gained from those

  15. High-power parametric amplification of 11.8-fs laser pulses with carrier-envelope phase control

    NARCIS (Netherlands)

    Zinkstok, R.T.; Witte, S.; Hogervorst, W.; Eikema, K.S.E.

    2005-01-01

    Phase-stable parametric chirped-pulse amplification of ultrashort pulses from a carrier-envelope phase-stabilized mode-locked Ti:sapphire oscillator (11.0 fs) to 0.25 mJ/pulse at 1 kHz is demonstrated. Compression with a grating compressor and a LCD shaper yields near-Fourier-limited 11.8-fs pulses

  16. DEMONSTRATION BULLETIN: HIGH VOLTAGE ELECTRON BEAM TECHNOLOGY - HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.

    Science.gov (United States)

    The high energy electron beam irradiation technology is a low temperature method for destroying complex mixtures of hazardous organic chemicals in solutions containing solids. The system consists of a computer-automated, portable electron beam accelerator and a delivery system. T...

  17. Measurement of few-electron uranium ions on a high-energy electron beam ion trap

    International Nuclear Information System (INIS)

    Beiersdorfer, P.

    1994-01-01

    The high-energy electron beam ion trap, dubbed Super-EBIT, was used to produce, trap, and excite uranium ions as highly charged as fully stripped U 92+ . The production of such highly charged ions was indicated by the x-ray emission observed with high-purity Ge detectors. Moreover, high-resolution Bragg crystal spectromters were used to analyze the x-ray emission, including a detailed measurement of both the 2s 1/2 -2p 3/2 electric dipole and 2p 1/2 -2p 3/2 magnetic dipole transitions. Unlike in ion accelerators, where the uranium ions move at relativistic speeds, the ions in this trap are stationary. Thus very precise measurements of the transition energies could be made, and the QED contribution to the transition energies could be measured within less than 1 %. Details of the production of these highly charged ions and their measurement is given

  18. On the possibility of obtaining high-energy polarized electrons on Yerevan synchrotron

    International Nuclear Information System (INIS)

    Melikyan, R.A.

    1975-01-01

    A possibility of producing high-energy polarized electrons on the Yerevan synchrotron is discussed. A review of a number of low-energy polarized electron sources and of some of experiments with high-energy polarized electrons is given

  19. Harmonic operation of high gain harmonic generation free electron laser

    International Nuclear Information System (INIS)

    Deng Haixiao; Chinese Academy of Sciences, Beijing; Dai Zhimin

    2008-01-01

    In high gain harmonic generation (HGHG) free electron laser (FEL), with the right choice of parameters of the modulator undulator, the dispersive section and the seed laser, one may make the spatial bunching of the electron beam density distribution correspond to one of the harmonic frequencies of the radiator radiation, instead of the fundamental frequency of the radiator radiation in conventional HGHG, thus the radiator undulator is in harmonic operation (HO) mode. In this paper, we investigate HO of HGHG FEL. Theoretical analyses with universal method are derived and numerical simulations in ultraviolet and deep ultraviolet spectral regions are given. It shows that the power of the 3rd harmonic radiation in the HO of HGHG may be as high as 18.5% of the fundamental power level. Thus HO of HGHG FEL may obtain short wavelength by using lower beam energy. (authors)

  20. Electron gun for formation of two high-current beams

    International Nuclear Information System (INIS)

    Borisov, A.R.; Zherlitsyn, A.G.; Mel'nikov, G.V.; Shtejn, Yu.G.

    1982-01-01

    The design of the ''Tonus'' accelerator electron gun for formation of two high-current beams aiming at the production of the maximum beam power and density is described. The results of investigation of two modes of beam formation are presented. In the first variant the beams were produced by means of two plane diodes with 40 mm diameter cathodes made of stainless steel and anodes made of 50 μm thick titanium foil. In the second variant the beams were formed by means of two coaxial diodes with magnetic insulation. In one diode the cathode diameter equals to 74 mm, the anode diameter - 92 mm, in the other diode 16 and 44 mm respectively. Current redistribution in the diodes and its effect on accelerating voltage are investigated. It is shown that the gun permits formation of synchronized two high-current beams, iaving equal electron energied. Wide range current control of both beams is possible

  1. Recent advances in high-brightness electron guns at AES

    International Nuclear Information System (INIS)

    Bluem, H.; Todd, A.M.M.; Cole, M.D.; Rathke, J.; Schultheiss, T.

    2003-01-01

    We describe a number of active Advanced Energy Systems projects pertaining to the development of advanced, high-brightness electron guns for various applications. These projects include a fully superconducting, CW RF gun, nearing test, that utilizes the niobium surface as the photocathode material. An integrated 100 mA, low emittance DC/SRF gun, ideal as an injector for ERL-type light sources and intended as the injector for a 100 kW FEL, is in late design stage. A parallel high-power, CW, normal-conducting L-band RF gun project has just begun. The early performance analysis for this gun also shows good promise as an injector for ERL-type light sources. Lastly, a fully axisymmetric RF gun, operating in X-band, is being studied as a source of extremely bright electron bunches

  2. Laboratory Astrophysics Using High Energy Density Photon and Electron Beams

    CERN Document Server

    Bingham, Robert

    2005-01-01

    The development of intense laser and particle beams has opened up new opportunities to study high energy density astrophysical processes in the Laboratory. With even higher laser intensities possible in the near future vacuum polarization processes such as photon - photon scattering with or without large magnetic fields may also be experimentally observed. In this talk I will review the status of laboratory experiments using intense beans to investigate extreme astrophysical phenomena such as supernovae explosions, gamma x-ray bursts, ultra-high energy cosmic accelerators etc. Just as intense photon or electron beams can excite relativistic electron plasma waves or wakefields used in plasma acceleration, intense neutrino beams from type II supernovae can also excite wakefields or plasma waves. Other instabilities driven by intense beams relevant to perhaps x-ray bursts is the Weibel instability. Simulation results of extreme processes will also be presented.

  3. Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

    Science.gov (United States)

    Chen, Ke; Roy, Anupam; Rai, Amritesh; Movva, Hema C. P.; Meng, Xianghai; He, Feng; Banerjee, Sanjay K.; Wang, Yaguo

    2018-05-01

    Defect-carrier interaction in transition metal dichalcogenides (TMDs) plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated the effect of grain boundary/edge defects on the ultrafast dynamics of photoexcited carrier in molecular beam epitaxy (MBE)-grown MoTe2 and MoSe2. We found that, comparing with exfoliated samples, the carrier recombination rate in MBE-grown samples accelerates by about 50 times. We attribute this striking difference to the existence of abundant grain boundary/edge defects in MBE-grown samples, which can serve as effective recombination centers for the photoexcited carriers. We also observed coherent acoustic phonons in both exfoliated and MBE-grown MoTe2, indicating strong electron-phonon coupling in this materials. Our measured sound velocity agrees well with the previously reported result of theoretical calculation. Our findings provide a useful reference for the fundamental parameters: carrier lifetime and sound velocity and reveal the undiscovered carrier recombination effect of grain boundary/edge defects, both of which will facilitate the defect engineering in TMD materials for high speed opto-electronics.

  4. Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

    Directory of Open Access Journals (Sweden)

    Ke Chen

    2018-05-01

    Full Text Available Defect-carrier interaction in transition metal dichalcogenides (TMDs plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated the effect of grain boundary/edge defects on the ultrafast dynamics of photoexcited carrier in molecular beam epitaxy (MBE-grown MoTe2 and MoSe2. We found that, comparing with exfoliated samples, the carrier recombination rate in MBE-grown samples accelerates by about 50 times. We attribute this striking difference to the existence of abundant grain boundary/edge defects in MBE-grown samples, which can serve as effective recombination centers for the photoexcited carriers. We also observed coherent acoustic phonons in both exfoliated and MBE-grown MoTe2, indicating strong electron-phonon coupling in this materials. Our measured sound velocity agrees well with the previously reported result of theoretical calculation. Our findings provide a useful reference for the fundamental parameters: carrier lifetime and sound velocity and reveal the undiscovered carrier recombination effect of grain boundary/edge defects, both of which will facilitate the defect engineering in TMD materials for high speed opto-electronics.

  5. Precision crystal alignment for high-resolution electron microscope imaging

    International Nuclear Information System (INIS)

    Wood, G.J.; Beeching, M.J.

    1990-01-01

    One of the more difficult tasks involved in obtaining quality high-resolution electron micrographs is the precise alignment of a specimen into the required zone. The current accepted procedure, which involves changing to diffraction mode and searching for symmetric point diffraction pattern, is insensitive to small amounts of misalignment and at best qualitative. On-line analysis of the fourier space representation of the image, both for determining and correcting crystal tilt, is investigated. 8 refs., 42 figs

  6. High-gradient electron accelerator powered by a relativisitic klystron

    International Nuclear Information System (INIS)

    Allen, M.A.; Boyd, J.K.; Callin, R.S.; Deruyter, H.; Eppley, K.R.; Fant, K.S.; Fowkes, W.R.; Haimson, J.; Hoag, H.A.; Hopkins, D.B.; Houck, T.; Koontz, R.F.; Lavine, T.L.; Loew, G.A.; Mecklenburg, B.; Miller, R.H.; Ruth, R.D.; Ryne, R.D.; Sessler, A.M.; Vlieks, A.E.; Wang, J.W.; Westenskow, G.A.; Yu, S.S.

    1989-01-01

    We have used relativistic klystron technology to extract 290 MW of peak power at 11.4 GHz from an induction linac beam, and to power a short 11.4-GHz high-gradient accelerator. We have measured rf phase stability, field emission, and the momentum spectrum of an accelerated electron beam. An average accelerating gradient of 84 MV/m has been achieved with 80 MW of relativistic klystron power

  7. Parity nonconservation in polarized electron scattering at high energies

    International Nuclear Information System (INIS)

    Prescott, C.Y.

    1979-10-01

    Recent observations of parity violation in inelastic scattering of electrons at high energy is discussed with reference to the process e(polarized) + D(unpolarized) → e + X. The kinetics of this process, the idealized case of scattering from free quark targets, experimental techniques and results, and relations to atomic physics of parity violation in bismuth and thallium atoms with a model independent analysis. 17 references

  8. Environmental high resolution electron microscopy and applications to chemical science

    OpenAIRE

    Boyes, Edward; Gai, Pratibha

    2017-01-01

    An environmental cell high resolution electron microscope (EHREM) has been developed for in situ studies of dynamic chemical reactions on the atomic scale. It allows access to metastable intermediate phases of catalysts and to sequences of reversible microstructural and chemical development associated with the activation, deactivation and poisoning of a catalyst. Materials transported through air can be restored or recreated and samples damaged, e.g. by dehydration, by the usual vacuum enviro...

  9. Kinase detection with gallium nitride based high electron mobility transistors.

    Science.gov (United States)

    Makowski, Matthew S; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena

    2013-07-01

    A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

  10. Stretchable electronics for wearable and high-current applications

    Science.gov (United States)

    Hilbich, Daniel; Shannon, Lesley; Gray, Bonnie L.

    2016-04-01

    Advances in the development of novel materials and fabrication processes are resulting in an increased number of flexible and stretchable electronics applications. This evolving technology enables new devices that are not readily fabricated using traditional silicon processes, and has the potential to transform many industries, including personalized healthcare, consumer electronics, and communication. Fabrication of stretchable devices is typically achieved through the use of stretchable polymer-based conductors, or more rigid conductors, such as metals, with patterned geometries that can accommodate stretching. Although the application space for stretchable electronics is extensive, the practicality of these devices can be severely limited by power consumption and cost. Moreover, strict process flows can impede innovation that would otherwise enable new applications. In an effort to overcome these impediments, we present two modified approaches and applications based on a newly developed process for stretchable and flexible electronics fabrication. This includes the development of a metallization pattern stamping process allowing for 1) stretchable interconnects to be directly integrated with stretchable/wearable fabrics, and 2) a process variation enabling aligned multi-layer devices with integrated ferromagnetic nanocomposite polymer components enabling a fully-flexible electromagnetic microactuator for large-magnitude magnetic field generation. The wearable interconnects are measured, showing high conductivity, and can accommodate over 20% strain before experiencing conductive failure. The electromagnetic actuators have been fabricated and initial measurements show well-aligned, highly conductive, isolated metal layers. These two applications demonstrate the versatility of the newly developed process and suggest potential for its furthered use in stretchable electronics and MEMS applications.

  11. Electron beam welding of high-purity copper accelerator cells

    International Nuclear Information System (INIS)

    Delis, K.; Haas, H.; Schlebusch, P.; Sigismund, E.

    1986-01-01

    The operating conditions of accelerator cells require high thermal conductivity, low gas release in the ultrahigh vacuum, low content of low-melting metals and an extremely good surface quality. In order to meet these requirements, high-purity copper (OFHC, Grade 1, according to ASTM B 170-82 and extra specifications) is used as structural material. The prefabricated components of the accelerator cells (noses, jackets, flanges) are joined by electron beam welding, the weld seam being assessed on the basis of the same criteria as the base material. The welding procedures required depend, first, on the material and, secondly, on the geometries involved. Therefore experimental welds were made first on standardized specimens in order to study the behaviour of the material during electron beam welding and the influence of parameter variations. The welded joints of the cell design were planned on the basis of these results. Seam configuration, welding procedures and the parameters were optimized on components of original geometry. The experiments have shown that high-quality joints of this grade of copper can be produced by the electron beam welding process, if careful planning and preparation of the seams and adequate containment of the welding pool are assured. (orig.)

  12. Electronic Structure of the Bismuth Family of High Temperature Superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Dunn, Lisa

    2002-03-07

    High temperature superconductivity remains the central intellectual problem in condensed matter physics fifteen years after its discovery. Angle resolved photoemission spectroscopy (ARPES) directly probes the electronic structure, and has played an important role in the field of high temperature superconductors. With the recent advances in sample growth and the photoemission technique, we are able to study the electronic structure in great detail, and address regimes that were previously inaccessible. This thesis work contains systematic photoemission studies of the electronic structure of the Bi-family of high temperature superconductors, which include the single-layer system (Bi2201), the bi-layer system (Bi2212), and the tri-layer system (Bi2223). We show that, unlike conventional BCS superconductors, phase coherence information emerges in the single particle excitation spectrum of high temperature superconductors as the superconducting peak in Bi2212. The universality and various properties of this superconducting peak are studied in various systems. We argue that the origin of the superconducting peak may provide the key to understanding the mechanism of High-Tc superconductors. In addition, we identified a new experimental energy scale in the bilayer material, the anisotropic intra-bilayer coupling energy. For a long time, it was predicted that this energy scale would cause bilayer band splitting. We observe this phenomenon, for the first time, in heavily overdoped Bi2212. This new observation requires the revision of the previous picture of the electronic excitation in the Brillouin zone boundary. As the first ARPES study of a trilayer system, various detailed electronic proper- ties of Bi2223 are examined. We show that, comparing with Bi2212, both superconducting gap and relative superconducting peak intensity become larger in Bi2223, however, the strength of the interlayer coupling within each unit cell is possibly weaker. These results suggest that the

  13. Electron injection dynamics in high-potential porphyrin photoanodes.

    Science.gov (United States)

    Milot, Rebecca L; Schmuttenmaer, Charles A

    2015-05-19

    promising sensitizers because their high reduction potentials are compatible with the energy requirements of water oxidation. TRTS of free-base and metalated pentafluorophenyl porphyrins reveal inefficient electron injection into TiO2 nanoparticles but more efficient electron injection into SnO2 nanoparticles. With SnO2, injection time scales depend strongly on the identity of the central substituent and are affected by competition with excited-state deactivation processes. Heavy or paramagnetic metal ions increase the electron injection time scale by roughly one order of magnitude relative to free-base or Zn(2+) porphyrins due to the possibility of electron injection from longer-lived, lower-lying triplet states. Furthermore, electron injection efficiency loosely correlates with DSSC performance. The carboxylate anchoring group is commonly used to bind DSSC sensitizers to metal oxide surfaces but typically is not stable under the aqueous and oxidative conditions required for water oxidation. Electron injection efficiency of several water-stable alternatives, including phosphonic acid, hydroxamic acid, acetylacetone, and boronic acid, were evaluated using TRTS, and hydroxamate was found to perform as well as the carboxylate. The next challenge is incorporating a water oxidation catalyst into the design. An early example, in which an Ir-based precatalyst is cosensitized with a fluorinated porphyrin, reveals decreased electron injection efficiency despite an increase in photocurrent. Future research will seek to better understand and address these difficulties.

  14. Dose characteristics of high-energy electrons, muons and photons

    International Nuclear Information System (INIS)

    Britvich, G.I.; Krupnyj, G.I.; Peleshko, V.N.; Rastsvetalov, Ya.N.

    1980-01-01

    Differential distribution of energy release at different depth of tissue-equivalent phantoms (plexiglas, polystyrene, polyethylene) at the energy of incident electrons, muons of 0.2-40 GeV and photons with the mean energy of 3.6 GeV are measured. The error of experimental results does not exceed 7%. On the basis of the data obtained dose characteristics of electrons, muons and photons for standard geometry are estimated. For all types of irradiation the maximum value of specific equivalent dose, nremxcm 2 /part. is presented. It is shown that published values of specific equivalent dose of electron radiation are higher in all the investigated energy range from 0.2 to 40 GeV, and for muon radiation a good agreement with the present experiment is observed. The highly precise results obtained which cover the wide dynamic range according to the energy of incident particles can serve as the basis for reconsidering the existing recommendations for dose characteristics of electron radiation [ru

  15. Simultaneous correlative scanning electron and high-NA fluorescence microscopy.

    Directory of Open Access Journals (Sweden)

    Nalan Liv

    Full Text Available Correlative light and electron microscopy (CLEM is a unique method for investigating biological structure-function relations. With CLEM protein distributions visualized in fluorescence can be mapped onto the cellular ultrastructure measured with electron microscopy. Widespread application of correlative microscopy is hampered by elaborate experimental procedures related foremost to retrieving regions of interest in both modalities and/or compromises in integrated approaches. We present a novel approach to correlative microscopy, in which a high numerical aperture epi-fluorescence microscope and a scanning electron microscope illuminate the same area of a sample at the same time. This removes the need for retrieval of regions of interest leading to a drastic reduction of inspection times and the possibility for quantitative investigations of large areas and datasets with correlative microscopy. We demonstrate Simultaneous CLEM (SCLEM analyzing cell-cell connections and membrane protrusions in whole uncoated colon adenocarcinoma cell line cells stained for actin and cortactin with AlexaFluor488. SCLEM imaging of coverglass-mounted tissue sections with both electron-dense and fluorescence staining is also shown.

  16. Electron detachment energies in high-symmetry alkali halide solvated-electron anions

    Science.gov (United States)

    Anusiewicz, Iwona; Berdys, Joanna; Simons, Jack; Skurski, Piotr

    2003-07-01

    We decompose the vertical electron detachment energies (VDEs) in solvated-electron clusters of alkali halides in terms of (i) an electrostatic contribution that correlates with the dipole moment (μ) of the individual alkali halide molecule and (ii) a relaxation component that is related to the polarizability (α) of the alkali halide molecule. Detailed numerical ab initio results for twelve species (MX)n- (M=Li,Na; X=F,Cl,Br; n=2,3) are used to construct an interpolation model that relates the clusters' VDEs to their μ and α values as well as a cluster size parameter r that we show is closely related to the alkali cation's ionic radius. The interpolation formula is then tested by applying it to predict the VDEs of four systems [i.e., (KF)2-, (KF)3-, (KCl)2-, and (KCl)3-] that were not used in determining the parameters of the model. The average difference between the model's predicted VDEs and the ab initio calculated electron binding energies is less than 4% (for the twelve species studied). It is concluded that one can easily estimate the VDE of a given high-symmetry solvated electron system by employing the model put forth here if the α, μ and cation ionic radii are known. Alternatively, if VDEs are measured for an alkali halide cluster and the α and μ values are known, one can estimate the r parameter, which, in turn, determines the "size" of the cluster anion.

  17. Raising awareness of carrier testing for hereditary haemoglobinopathies in high-risk ethnic groups in the Netherlands: a pilot study among the general public and primary care providers

    Directory of Open Access Journals (Sweden)

    Cornel Martina C

    2009-09-01

    Full Text Available Abstract Background In the Netherlands no formal recommendations exist concerning preconceptional or antenatal testing for carriership of hereditary haemoglobinopathies. Those at highest risk may be unaware of the possibility of carrier screening. While universal newborn screening has recently been introduced, neither preconceptional nor antenatal carrier testing is routinely offered by health care services to the general public. A municipal health service and a foundation for public information on medical genetics undertook a pilot project with the aim of increasing knowledge and encouraging informed choice. Two groups were targeted: members of the public from ethnic groups at increased risk, and primary health care providers. This study examines the effectiveness of culturally specific 'infotainment' to inform high-risk ethnic groups about their increased risk for haemoglobinopathies. In addition, the study explores attitudes and intentions of primary care providers towards haemoglobinopathy carrier testing of their patients from high-risk ethnic groups. Methods Informational sessions tailored to the public or professionals were organised in Amsterdam, and evaluated for their effect. Psychological parameters were measured using structured questionnaires based on the Theory of Planned Behaviour. Results The pre-test/post-test questionnaire showed that members of the public gained understanding of inheritance and carriership of haemoglobinopathies from the "infotainment" session (p Conclusion The "infotainment" programme may have a positive effect on people from high-risk groups, but informed general practitioners and midwives were reluctant to facilitate their patients' getting tested. Additional initiatives are needed to motivate primary care providers to facilitate haemoglobinopathy carrier testing for their patients from high-risk backgrounds.

  18. High Temperature Wireless Communication And Electronics For Harsh Environment Applications

    Science.gov (United States)

    Hunter, G. W.; Neudeck, P. G.; Beheim, G. M.; Ponchak, G. E.; Chen, L.-Y

    2007-01-01

    In order for future aerospace propulsion systems to meet the increasing requirements for decreased maintenance, improved capability, and increased safety, the inclusion of intelligence into the propulsion system design and operation becomes necessary. These propulsion systems will have to incorporate technology that will monitor propulsion component conditions, analyze the incoming data, and modify operating parameters to optimize propulsion system operations. This implies the development of sensors, actuators, and electronics, with associated packaging, that will be able to operate under the harsh environments present in an engine. However, given the harsh environments inherent in propulsion systems, the development of engine-compatible electronics and sensors is not straightforward. The ability of a sensor system to operate in a given environment often depends as much on the technologies supporting the sensor element as the element itself. If the supporting technology cannot handle the application, then no matter how good the sensor is itself, the sensor system will fail. An example is high temperature environments where supporting technologies are often not capable of operation in engine conditions. Further, for every sensor going into an engine environment, i.e., for every new piece of hardware that improves the in-situ intelligence of the components, communication wires almost always must follow. The communication wires may be within or between parts, or from the engine to the controller. As more hardware is added, more wires, weight, complexity, and potential for unreliability is also introduced. Thus, wireless communication combined with in-situ processing of data would significantly improve the ability to include sensors into high temperature systems and thus lead toward more intelligent engine systems. NASA Glenn Research Center (GRC) is presently leading the development of electronics, communication systems, and sensors capable of prolonged stable

  19. High speed decision electronics combined to a beam Cherenkov counter

    International Nuclear Information System (INIS)

    Sghaier, H.

    1993-01-01

    The Hypolit detector for identification of particles in high energy physics using the Cherenkov radiation, is based on an intensifier tube coupled to photomultipliers via a fiber-optic matrix. Cherenkov photons are focused into a ring; particle identification consists in calculating the ring radius. A fast and high level electronic system is associated to Hypolit. Besides deriving the radius, it allows a background rejection and achieves a momentum correction. This on line tagging contributes to build the WA89 trigger. Tuning is controlled with a micro-computer which makes the access to the heart of the system friendly-user

  20. Two-electron photoionization cross sections at high energies

    International Nuclear Information System (INIS)

    Amusia, M.Ya.; Krivec, R.; Mandelzweig, V.B.

    2003-01-01

    Double and single electron photoionization cross sections and their ratios at high and ultra-relativistic energies are calculated for H - , He and helium-like ions in ground and excited states including triplet states. The ratios contain shake-off and quasi-free terms. A high precision non-variational wave function is used. The quasi-free mechanism increases the ratios impressively: for He we get 0.0762 instead of 0.0164 in the non-relativistic case. Ratios are inversely proportional to Z 2 , with a factor increasing from 0.094 in the nonrelativistic to 0.595 in the ultra-relativistic limit. (author)

  1. Structural stability of coplanar 1T-2H superlattice MoS2 under high energy electron beam

    Science.gov (United States)

    Reshmi, S.; Akshaya, M. V.; Satpati, Biswarup; Basu, Palash Kumar; Bhattacharjee, K.

    2018-05-01

    Coplanar heterojunctions composed of van der Waals layered materials with different structural polymorphs have drawn immense interest recently due to low contact resistance and high carrier injection rate owing to low Schottky barrier height. Present research has largely focused on efficient exfoliation of these layered materials and their restacking to achieve better performances. We present here a microwave assisted easy, fast and efficient route to induce high concentration of metallic 1T phase in the original 2H matrix of exfoliated MoS2 layers and thus facilitating the formation of a 1T-2H coplanar superlattice phase. High resolution transmission electron microscopy (HRTEM) investigations reveal formation of highly crystalline 1T-2H hybridized structure with sharp interface and disclose the evidence of surface ripplocations within the same exfoliated layer of MoS2. In this work, the structural stability of 1T-2H superlattice phase during HRTEM measurements under an electron beam of energy 300 keV is reported. This structural stability could be either associated to the change in electronic configuration due to induction of the restacked hybridized phase with 1T- and 2H-regions or to the formation of the surface ripplocations. Surface ripplocations can act as an additional source of scattering centers to the electron beam and also it is possible that a pulse train of propagating ripplocations can sweep out the defects via interaction from specific areas of MoS2 sheets.

  2. Electronic Current Transducer (ECT) for high voltage dc lines

    Science.gov (United States)

    Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

    1980-02-01

    The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

  3. Photogenerated carriers transfer in dye-graphene-SnO2 composites for highly efficient visible-light photocatalysis.

    Science.gov (United States)

    Zhuang, Shendong; Xu, Xiaoyong; Feng, Bing; Hu, Jingguo; Pang, Yaru; Zhou, Gang; Tong, Ling; Zhou, Yuxue

    2014-01-08

    The visible-light-driven photocatalytic activities of graphene-semiconductor catalysts have recently been demonstrated, however, the transfer pathway of photogenerated carriers especially where the role of graphene still remains controversial. Here we report graphene-SnO2 aerosol nanocomposites that exhibit more superior dye adsorption capacity and photocatalytic efficiency compared with pure SnO2 quantum dots, P25 TiO2, and pure graphene aerosol under the visible light. This study examines the origin of the visible-light-driven photocatalysis, which for the first time links to the synergistic effect of the cophotosensitization of the dye and graphene to SnO2. We hope this concept and corresponding mechanism of cophotosensitization could provide an original understanding for the photocatalytic reaction process at the level of carrier transfer pathway as well as a brand new approach to design novel and versatile graphene-based composites for solar energy conversion.

  4. Frontend electronics for high-precision single photo-electron timing using FPGA-TDCs

    Energy Technology Data Exchange (ETDEWEB)

    Cardinali, Matteo [Helmholtz Institut Mainz (Germany); Collaboration: PANDA Cherenkov-Collaboration

    2014-07-01

    The next generation of high-luminosity experiments requires excellent Particle Identification (PID) detectors which calls for Imaging Cherenkov counters with fast electronics to cope with the expected data rates. The planned PANDA experiment at FAIR expects average interaction rates of 20 MHz. A Barrel DIRC will provide PID in the central region of the Target Spectrometer. A single photo-electron timing resolution of better than 100 ps is projected for the Barrel DIRC to disentangle the complicated patterns created by the focusing optics on the image plane. The typically large amount of readout channels (approx 15,000 in case of the PANDA Barrel DIRC) places non-negligible limits on size and power consumption of the Front-End Electronics (FEE). The proposed design is based on the TRBv3 readout using FPGA-TDCs with a precision better than 20 ps RMS and custom FEE with high-bandwidth pre-amplifiers and fast discriminators. Two types of FEE cards optimised for reading out 64-channel Photonis Planacon MCP-PMTs were tested: one based on the NINO ASIC developed for the ALICE RPC readout and the other, called PaDiWa, using FPGA-based discriminators. Both types of FEE cards were tested with a small DIRC prototype comprising a radiator bar with focusing lens and an oil-filled expansion volume instrumented with 6 Planacon 64-channel MCP-PMTs. In the presentation the result of a test experiment performed at MAMI B, Mainz, are addressed.

  5. Electronic structure and optical properties of AIN under high pressure

    International Nuclear Information System (INIS)

    Li Zetao; Dang Suihu; Li Chunxia

    2011-01-01

    We have calculated the electronic structure and optical properties of Wurtzite structure AIN under different high pressure with generalized gradient approximation (GGA) in this paper. The total energy, density of state, energy band structure and optical absorption and reflection properties under high pressure are calculated. By comparing the changes of the energy band structure, we obtained AIN phase transition pressure for 16.7 GPa, which is a direct band structure transforming to an indirect band structure. Meanwhile, according to the density of states distribution and energy band structure, we analyzed the optical properties of AIN under high-pressure, the results showed that the absorption spectra moved from low-energy to high-energy. (authors)

  6. Tackler’s head position relative to the ball carrier is highly correlated with head and neck injuries in rugby

    Science.gov (United States)

    Hasegawa, Yoshinori; Shiota, Yuki; Ota, Chihiro; Yoneda, Takeshi; Tahara, Shigeyuki; Maki, Nobukazu; Matsuura, Takahiro; Sekiguchi, Masahiro; Itoigawa, Yoshiaki; Tateishi, Tomohiko; Kaneko, Kazuo

    2018-01-01

    Objectives To characterise the tackler’s head position during one-on-one tackling in rugby and to determine the incidence of head, neck and shoulder injuries through analysis of game videos, injury records and a questionnaire completed by the tacklers themselves. Methods We randomly selected 28 game videos featuring two university teams in competitions held in 2015 and 2016. Tackles were categorised according to tackler’s head position. The ‘pre-contact phase’ was defined; its duration and the number of steps taken by the ball carrier prior to a tackle were evaluated. Results In total, 3970 tackles, including 317 (8.0%) with the tackler’s head incorrectly positioned (ie, in front of the ball carrier) were examined. Thirty-two head, neck or shoulder injuries occurred for an injury incidence of 0.8% (32/3970). The incidence of injury in tackles with incorrect head positioning was 69.4/1000 tackles; the injury incidence with correct head positioning (ie, behind or to one side of the ball carrier) was 2.7/1000 tackles. Concussions, neck injuries, ‘stingers’ and nasal fractures occurred significantly more often during tackles with incorrect head positioning than during tackles with correct head positioning. Significantly fewer steps were taken before tackles with incorrect head positioning that resulted in injury than before tackles that did not result in injury. Conclusion Tackling with incorrect head position relative to the ball carrier resulted in a significantly higher incidence of concussions, neck injuries, stingers and nasal fractures than tackling with correct head position. Tackles with shorter duration and distance before contact resulted in more injuries. PMID:29162618

  7. Microfabricated high-bandpass foucault aperture for electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Glaeser, Robert; Cambie, Rossana; Jin, Jian

    2014-08-26

    A variant of the Foucault (knife-edge) aperture is disclosed that is designed to provide single-sideband (SSB) contrast at low spatial frequencies but retain conventional double-sideband (DSB) contrast at high spatial frequencies in transmission electron microscopy. The aperture includes a plate with an inner open area, a support extending from the plate at an edge of the open area, a half-circle feature mounted on the support and located at the center of the aperture open area. The radius of the half-circle portion of reciprocal space that is blocked by the aperture can be varied to suit the needs of electron microscopy investigation. The aperture is fabricated from conductive material which is preferably non-oxidizing, such as gold, for example.

  8. High frequency conductivity of hot electrons in carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Amekpewu, M., E-mail: mamek219@gmail.com [Department of Applied Physics, University for Development Studies, Navrongo (Ghana); Mensah, S.Y. [Department of Physics, College of Agriculture and Natural Sciences, U.C.C. (Ghana); Musah, R. [Department of Applied Physics, University for Development Studies, Navrongo (Ghana); Mensah, N.G. [Department of Mathematics, College of Agriculture and Natural Sciences, U.C.C. (Ghana); Abukari, S.S.; Dompreh, K.A. [Department of Physics, College of Agriculture and Natural Sciences, U.C.C. (Ghana)

    2016-05-01

    High frequency conductivity of hot electrons in undoped single walled achiral Carbon Nanotubes (CNTs) under the influence of ac–dc driven fields was considered. We investigated semi-classically Boltzmann's transport equation with and without the presence of the hot electrons’ source by deriving the current densities in CNTs. Plots of the normalized current density versus frequency of ac-field revealed an increase in both the minimum and maximum peaks of normalized current density at lower frequencies as a result of a strong injection of hot electrons. The applied ac-field plays a twofold role of suppressing the space-charge instability in CNTs and simultaneously pumping an energy for lower frequency generation and amplification of THz radiations. These have enormous promising applications in very different areas of science and technology.

  9. Electron diode oscillators for high-power RF generation

    International Nuclear Information System (INIS)

    Humphries, S.

    1989-01-01

    Feedback oscillators have been used since the invention of the vacuum tube. This paper describes the extension of these familiar circuits to the regime of relativistic electron beam diodes. Such devices have potential application for the generation of high power RF radiation in the range 50-250 MHz, 1-10 GW with 20-60% conversion efficiency. This paper reviews the theory of the oscillator and the results of a design study. Calculations for the four-electrode diode with EGUN and EBQ show that good modulations of 30 kA electron beam at 600 kV can be achieved with moderate field stress on the electrodes. Conditions for oscillation have been studied with an in-house transmission line code. A design for a 7.5 GW oscillator at 200 MHz with 25% conversion efficiency is presented

  10. Emittance measurement for high-brightness electron guns

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kurihara, T.; Sato, I.; Asami, A.; Yamazaki, Y.; Otani, S.; Ishizawa, Y.

    1992-01-01

    An emittance measurement system based on a high-precision pepper-pot technique has been developed for electron guns with low emittance of around πmm-mrad. Electron guns with a 1 mmφ cathode, the material of which is impregnated tungsten or single-crystal lanthanum hexaboride (La 1-x Ce x )B 6 , have been developed. The performance has been evaluated by putting stress on cathode roughness, which gives rise to an angular divergence, according to the precise emittance measurement system. A new type of cathode holder, which is a modified version of the so called Vogel type, was developed and the beam uniformity has been improved. (Author) 5 figs., tab., 9 refs

  11. High-dose dosimetry using electron spin resonance (ESR) spectroscopy

    International Nuclear Information System (INIS)

    Kojima, Takuji; Tanaka, Ryuichi

    1992-01-01

    An electron spin resonance (ESR) dosimeter capable of measuring large doses of radiation in radiotherapy and radiation processing is outlined. In particular, an alanine/ESR dosimeter is discussed, focusing on the development of elements, the development of the ESR dosimetric system, the application of alanine/ESR dosimeter, and basic researches. Rod elements for gamma radiation and x radiation and film elements for electron beams are described in detail. The following recent applications of the alanine/ESR dosimeter are introduced: using as a transfer dosimeter, applying to various types of radiation, diagnosing the deterioration of radiological materials and equipments, and applying to ESR imaging. The future subjects to be solved in the alanine/ESR dosimetric system are referred to as follows: (1) improvement of highly accurate elements suitable for the measurement of various types of radiation, (2) establishment of sensitive calibration method of the ESR equipment itself, and (3) calibration and standardization of radiation doses. (K.N.) 65 refs

  12. SPAD electronics for high-speed quantum communications

    Science.gov (United States)

    Bienfang, Joshua C.; Restelli, Alessandro; Migdall, Alan

    2011-01-01

    We discuss high-speed electronics that support the use of single-photon avalanche diodes (SPADs) in gigahertz singlephoton communications systems. For InGaAs/InP SPADs, recent work has demonstrated reduced afterpulsing and count rates approaching 500 MHz can be achieved with gigahertz periodic-gating techniques designed to minimize the total avalanche charge to less than 100 fC. We investigate afterpulsing in this regime and establish a connection to observations using more conventional techniques. For Si SPADs, we report the benefits of improved timing electronics that enhance the temporal resolution of Si SPADs used in a free-space quantum key distribution (QKD) system operating in the GHz regime. We establish that the effects of count-rate fluctuations induced by daytime turbulent scintillation are significantly reduced, benefitting the performance of the QKD system.

  13. High power electron beam accelerators for gas laser excitation

    International Nuclear Information System (INIS)

    Kelly, J.G.; Martin, T.H.; Halbleib, J.A.

    1976-06-01

    A preliminary parameter investigation has been used to determine a possible design of a high-power, relativistic electron beam, transversely excited laser. Based on considerations of present and developing pulsed power technology, broad area diode physics and projected laser requirements, an exciter is proposed consisting of a Marx generator, pulse shaping transmission lines, radially converging ring diodes and a laser chamber. The accelerator should be able to deliver approximately 20 kJ of electron energy at 1 MeV to the 10 4 cm 2 cylindrical surface of a laser chamber 1 m long and 0.3 m in diameter in 24 ns with very small azimuthal asymmetry and uniform radial deposition

  14. Electronic energy distribution function at high electron swarm energies in neon

    International Nuclear Information System (INIS)

    Brown, K.L.; Fletcher, J.

    1995-01-01

    Electron swarms moving through a gas under the influence of an applied electric field have been extensively investigated. Swarms at high energies, as measured by the ratio of the applied field to the gas number density, E/N, which are predominant in many applications have, in general, been neglected. Discharges at E/N in the range 300 0 < 133 Pa using a differentially pumped vacuum system in which the swarm electrons are extracted from the discharge and energy analysed in both a parallel plate retarded potential analyser and a cylindrical electrostatic analyser. Both pre-breakdown and post-breakdown discharges have been studied. Initial results indicate that as the discharge traverses breakdown no sudden change in the nature of the discharge occurs and that the discharge can be described by both a Monte Carlo simulation and by a Boltzmann treatment given by Phelps et al. (1987). 18 refs., 8 figs

  15. High-resolution imaging in the scanning transmission electron microscope

    International Nuclear Information System (INIS)

    Pennycook, S.J.; Jesson, D.E.

    1992-03-01

    The high-resolution imaging of crystalline materials in the scanning transmission electron microscopy (STEM) is reviewed with particular emphasis on the conditions under which an incoherent image can be obtained. It is shown that a high-angle annular detector can be used to break the coherence of the imaging process, in the transverse plane through the geometry of the detector, or in three dimensions if multiphonon diffuse scattering is detected. In the latter case, each atom can be treated as a highly independent source of high-angle scattering. The most effective fast electron states are therefore tightly bound s-type Bloch states. Furthermore, they add constructively for each incident angle in the coherent STEM probe, so that s states are responsible for practically the entire image contrast. Dynamical effects are largely removed, and almost perfect incoherent imaging is achieved. s states are relatively insensitive to neighboring strings, so that incoherent imaging is maintained for superlattice and interfaces, and supercell calculations are unnecessary. With an optimum probe profile, the incoherent image represents a direct image of the crystal projection, with compositional sensitivity built in through the strong dependence of the scattering cross sections on atomic number Z

  16. High efficiency confinement mode by electron cyclotron heating

    International Nuclear Information System (INIS)

    Funahashi, Akimasa

    1987-01-01

    In the medium size nuclear fusion experiment facility JFT-2M in the Japan Atomic Energy Research Institute, the research on the high efficiency plasma confinement mode has been advanced, and in the experiment in June, 1987, the formation of a high efficiency confinement mode was successfully controlled by electron cyclotron heating, for the first time in the world. This result further advanced the control of the formation of a high efficiency plasma confinement mode and the elucidation of the physical mechanism of that mode, and promoted the research and development of the plasma heating by electron cyclotron heating. In this paper, the recent results of the research on a high efficiency confinement mode at the JFT-2M are reported, and the role of the JFT-2M and the experiment on the improvement of core plasma performance are outlined. Now the plasma temperature exceeding 100 million deg C has been attained in large tokamaks, and in medium size facilities, the various measures for improving confinement performance are to be brought forth and their scientific basis is elucidated to assist large facilities. The JFT-2M started the operation in April, 1983, and has accumulated the results smoothly since then. (Kako, I.)

  17. Velocity bunching of high-brightness electron beams

    Directory of Open Access Journals (Sweden)

    S. G. Anderson

    2005-01-01

    Full Text Available Velocity bunching has been recently proposed as a tool for compressing electron beam pulses in modern high brightness photoinjector sources. This tool is familiar from earlier schemes implemented for bunching dc electron sources, but presents peculiar challenges when applied to high current, low emittance beams from photoinjectors. The main difficulty foreseen is control of emittance oscillations in the beam in this scheme, which can be naturally considered as an extension of the emittance compensation process at moderate energies. This paper presents two scenarios in which velocity bunching, combined with emittance control, is to play a role in nascent projects. The first is termed ballistic bunching, where the changing of relative particle velocities and positions occur in distinct regions, a short high gradient linac, and a drift length. This scenario is discussed in the context of the proposed ORION photoinjector. Simulations are used to explore the relationship between the degree of bunching, and the emittance compensation process. Experimental measurements performed at the UCLA Neptune Laboratory of the surprisingly robust bunching process, as well as accompanying deleterious transverse effects, are presented. An unanticipated mechanism for emittance growth in bends for highly momentum chirped beam was identified and studied in these experiments. The second scenario may be designated as phase space rotation, and corresponds closely to the recent proposal of Ferrario and Serafini. Its implementation for the compression of the electron beam pulse length in the PLEIADES inverse Compton scattering (ICS experiment at LLNL is discussed. It is shown in simulations that optimum compression may be obtained by manipulation of the phases in low gradient traveling wave accelerator sections. Measurements of the bunching and emittance control achieved in such an implementation at PLEIADES, as well as aspects of the use of velocity-bunched beam directly

  18. The indicating FTA elute cartridge a solid sample carrier to detect high-risk HPV and high-grade cervical lesions.

    Science.gov (United States)

    de Bie, Roosmarie P; Schmeink, Channa E; Bakkers, Judith M J E; Snijders, Peter J F; Quint, Wim G V; Massuger, Leon F A G; Bekkers, Ruud L M; Melchers, Willem J G

    2011-07-01

    The clinically validated high-risk human papillomavirus (hrHPV) Hybrid Capture 2 (HC2) and GP5+/6+-PCR assays were analyzed on an Indicating FTA Elute cartridge (FTA cartridge). The FTA cartridge is a solid dry carrier that allows safe transport of cervical samples. FTA cartridge samples were compared with liquid-based samples for hrHPV and high-grade cervical intraepithelial neoplasia (CIN) detection. One cervical sample was collected in a liquid-based medium, and one was applied to the FTA cartridge. DNA was eluted directly from the FTA cartridge by a simple elution step. HC2 and GP5+/6+-PCR assays were performed on both the liquid-based and the FTA-eluted DNA of 88 women. Overall agreement between FTA and liquid-based samples for the presence of hrHPV was 90.9% with GP5+/6+-PCR and 77.3% with HC2. The sensitivity for high-grade CIN of hrHPV testing on the FTA cartridges was 84.6% with GP5+/6+-PCR and only 53.8% with HC2. By comparison, these sensitivities on liquid-based samples were 92.3% and 100% for GP5+/6+-PCR and HC2, respectively. Therefore, the FTA cartridge shows reasonably good overall agreement for hrHPV detection with liquid-based media when using GP5+/6+-PCR but not HC2 testing. Even with GP5+/6+-PCR, the FTA cartridge is not yet capable of detecting all high-grade CIN lesions. Copyright © 2011 American Society for Investigative Pathology and the Association for Molecular Pathology. Published by Elsevier Inc. All rights reserved.

  19. High-Resolution Electronics: Spontaneous Patterning of High-Resolution Electronics via Parallel Vacuum Ultraviolet (Adv. Mater. 31/2016).

    Science.gov (United States)

    Liu, Xuying; Kanehara, Masayuki; Liu, Chuan; Sakamoto, Kenji; Yasuda, Takeshi; Takeya, Jun; Minari, Takeo

    2016-08-01

    On page 6568, T. Minari and co-workers describe spontaneous patterning based on the parallel vacuum ultraviolet (PVUV) technique, enabling the homogeneous integration of complex, high-resolution electronic circuits, even on large-scale, flexible, transparent substrates. Irradiation of PVUV to the hydrophobic polymer surface precisely renders the selected surface into highly wettable regions with sharply defined boundaries, which spontaneously guides a metal nanoparticle ink into a series of circuit lines and gaps with the widths down to a resolution of 1 μm. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Characterization of high Tc materials and devices by electron microscopy

    National Research Council Canada - National Science Library

    Browning, Nigel D; Pennycook, Stephen J

    2000-01-01

    ..., and microanalysis by scanning transmission electron microscopy. Ensuing chapters examine identi®cation of new superconducting compounds, imaging of superconducting properties by lowtemperature scanning electron microscopy, imaging of vortices by electron holography and electronic structure determination by electron energy loss spectro...

  1. Study on the adsorption of H2O and CO2 from the carrier gas of high-temperature gas-cooled reactor

    International Nuclear Information System (INIS)

    Liao Cuiping; Zheng Zhenhong; Shi Fuen; Zhou Dasen

    1998-01-01

    The author is focused on the experimental studies of the adsorption of moisture and carbon dioxide from the carrier gas of high-temperature gas-cooled reactor (HTGR). A suitable adsorbent--5A type molecular sieve spherical particles with an average diameter of 3 mm is chosen to purify the carrier gas with impurities of moisture and carbon dioxide. Experimental data at different concentration, flow rate, adsorptive temperature, pressure and bed depth are obtained from isothermal adsorption tests in order to examine the effects of these parameters on adsorption dynamic and for the optimal parameters selection of adsorption process. Experimental breakthrough curves, dynamic single component and multicomponent adsorption curves are obtained. The outlet concentration of H 2 O and CO 2 can reach below 1.0 x 10 -5 , so this purification system can meet the demands of HTGR

  2. Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-03-01

    The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

  3. Monolayer CS as a metal-free photocatalyst with high carrier mobility and tunable band structure: a first-principles study

    Science.gov (United States)

    Yang, Xiao-Le; Ye, Xiao-Juan; Liu, Chun-Sheng; Yan, Xiao-Hong

    2018-02-01

    Producing hydrogen fuel using suitable photocatalysts from water splitting is a feasible method to harvest solar energy. A desired photocatalyst is expected to have suitable band gap, moderate band edge position, and high carrier mobility. By employing first-principles calculations, we explore a α-CS monolayer as a metal-free efficient photocatalyst. The α-CS monolayer shows good energetic, dynamic, and thermal stabilities and is insoluble in water, suggesting its experimental practicability. Monolayer and bilayer α-CS present not only appropriate band gaps for visible and ultraviolet light absorption but also moderate band alignments with water redox potentials in pH neutral water. Remarkably, the α-CS monolayer exhibits high (up to 8453.19 cm2 V-1s-1 for hole) and anisotropic carrier mobility, which is favorable to the migration and separation of photogenerated carriers. In addition, monolayer α-CS experiences an interesting semiconductor-metal transition by applying uniaxial strain and external electric field. Moreover, α-CS under certain strain and electric field is still dynamically stable with the absence of imaginary frequencies. Furthermore, we demonstrate that the graphite (0 0 1) surface is a potential substrate for the α-CS growth with the intrinsic properties of α-CS maintaining. Therefore, our results could pave the way for the application of α-CS as a promising photocatalyst.

  4. Electronics

    Science.gov (United States)

    2001-01-01

    International Acer Incorporated, Hsin Chu, Taiwan Aerospace Industrial Development Corporation, Taichung, Taiwan American Institute of Taiwan, Taipei, Taiwan...Singapore and Malaysia .5 - 4 - The largest market for semiconductor products is the high technology consumer electronics industry that consumes up...Singapore, and Malaysia . A new semiconductor facility costs around $3 billion to build and takes about two years to become operational

  5. High voltage high brightness electron accelerators with MITL voltage adder coupled to foilless diodes

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Poukey, J.W.; Frost, C.A.; Shope, S.L.; Halbleib, J.A.; Turman, B.N.

    1993-01-01

    During the last ten years the authors have extensively studied the physics and operation of magnetically-immersed electron foilless diodes. Most of these sources were utilized as injectors to high current, high energy linear induction accelerators such as those of the RADLAC family. Recently they have experimentally and theoretically demonstrated that foilless diodes can be successfully coupled to self-magnetically insulated transmission line voltage adders to produce very small high brightness, high definition (no halo) electron beams. The RADLAC/SMILE experience opened the path to a new approach in high brightness, high energy induction accelerators. There is no beam drifting through the device. The voltage addition occurs in a center conductor, and the beam is created at the high voltage end in an applied magnetic field diode. This work was motivated by the remarkable success of the HERMES-III accelerator and the need to produce small radius, high energy, high current electron beams for air propagation studies and flash x-ray radiography. In this paper they present experimental results compared with analytical and numerical simulations in addition to design examples of devices that can produce multikiloamp electron beams of as high as 100 MV energies and radii as small as 1 mm

  6. Electron loss from hydrogen-like highly charged ions in collisions with electrons, protons and light atoms

    Science.gov (United States)

    Lyashchenko, K. N.; Andreev, O. Yu; Voitkiv, A. B.

    2018-03-01

    We consider electron loss from a hydrogen-like highly charged ion (HCI) in relativistic collisions with hydrogen and helium in the range of impact velocities v min ≤ v ≤ v max (v min and v max correspond to the threshold energy ε th for electron loss in collisions with a free electron and to ≈5 ε th, respectively) where any reliable data for loss cross sections are absent. In this range, where the loss process is characterized by large momentum transfers, we express it in terms of electron loss in collisions with equivelocity protons and electrons and explore by performing a detailed comparative study of these subprocesses. Our results, in particular, show that: (i) compared to equivelocity electrons protons are more effective in inducing electron loss, (ii) the relative effectiveness of electron projectiles grows with increase in the atomic number of a HCI, (iii) collisions with protons and electrons lead to a qualitatively different population of the final-state-electron momentum space and even when the total loss cross sections in these collisions become already equal the spectra of the outgoing electrons still remain quite different in almost the entire volume of the final-state-electron momentum space, (iv) in collisions with hydrogen and helium the contributions to the loss process from the interactions with the nucleus and the electron(s) of the atom could be rather well separated in a substantial part of the final-state-electron momentum space.

  7. Potentialities in electronics of new high critical temperature superconductors

    International Nuclear Information System (INIS)

    Hartemann, P.

    1989-01-01

    The main electronic applications of superconductors involve the signal processing, the electromagnetic wave detection and the magnetometry. Characteristics of devices based on conventional superconductors cooled by liquid helium are given and the changes induced by incorporating high-temperature superconductors are estimated. After a survey of new superconductor properties, the superconducting devices for analog or digital signal processing are reviewed. The gains predicted for high-temperature superconducting analog devices are considered in greater detail. Different sections deal with the infrared or (sub)millimeter wave detection. The most sensitive apparatuses for magnetic measurements are based on SQUIDs. Features of SQUIDs made of granular high-temperature superconducting material samples (grain boundaries behave as barriers of intrinsic junctions) are discussed [fr

  8. Carrier removal and defect behavior in p-type InP

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  9. Raising awareness of carrier testing for hereditary haemoglobinopathies in high-risk ethnic groups in the Netherlands: a pilot study among the general public and primary care providers.

    Science.gov (United States)

    Weinreich, Stephanie S; de Lange-de Klerk, Elly Sm; Rijmen, Frank; Cornel, Martina C; de Kinderen, Marja; Plass, Anne Marie C

    2009-09-15

    In the Netherlands no formal recommendations exist concerning preconceptional or antenatal testing for carriership of hereditary haemoglobinopathies. Those at highest risk may be unaware of the possibility of carrier screening. While universal newborn screening has recently been introduced, neither preconceptional nor antenatal carrier testing is routinely offered by health care services to the general public. A municipal health service and a foundation for public information on medical genetics undertook a pilot project with the aim of increasing knowledge and encouraging informed choice. Two groups were targeted: members of the public from ethnic groups at increased risk, and primary health care providers. This study examines the effectiveness of culturally specific 'infotainment' to inform high-risk ethnic groups about their increased risk for haemoglobinopathies. In addition, the study explores attitudes and intentions of primary care providers towards haemoglobinopathy carrier testing of their patients from high-risk ethnic groups. Informational sessions tailored to the public or professionals were organised in Amsterdam, and evaluated for their effect. Psychological parameters were measured using structured questionnaires based on the Theory of Planned Behaviour. The pre-test/post-test questionnaire showed that members of the public gained understanding of inheritance and carriership of haemoglobinopathies from the "infotainment" session (p Perceived behavioural control, i.e. the feeling that they could actually get tested if they wanted to, increased in the targeted age group of 18-45 years (N = 41; p ethnic groups was positive, yet they did not show strong intention to effectuate carrier testing of their patients on the basis of ethnicity. The main factor which explained their (lack of) intention was social norm, i.e. their perception of negative peer opinion (41% variance explained). The majority of primary health care providers felt that policy change was

  10. Ultimate response time of high electron mobility transistors

    International Nuclear Information System (INIS)

    Rudin, Sergey; Rupper, Greg; Shur, Michael

    2015-01-01

    We present theoretical studies of the response time of the two-dimensional gated electron gas to femtosecond pulses. Our hydrodynamic simulations show that the device response to a short pulse or a step-function signal is either smooth or oscillating time-decay at low and high mobility, μ, values, respectively. At small gate voltage swings, U 0  = U g  − U th , where U g is the gate voltage and U th is the threshold voltage, such that μU 0 /L < v s , where L is the channel length and v s is the effective electron saturation velocity, the decay time in the low mobility samples is on the order of L 2 /(μU 0 ), in agreement with the analytical drift model. However, the decay is preceded by a delay time on the order of L/s, where s is the plasma wave velocity. This delay is the ballistic transport signature in collision-dominated devices, which becomes important during very short time periods. In the high mobility devices, the period of the decaying oscillations is on the order of the plasma wave velocity transit time. Our analysis shows that short channel field effect transistors operating in the plasmonic regime can meet the requirements for applications as terahertz detectors, mixers, delay lines, and phase shifters in ultra high-speed wireless communication circuits

  11. Electron capture by highly charged low-velocity ions

    International Nuclear Information System (INIS)

    Cocke, C.L.; Dubois, R.; Justiniano, E.; Gray, T.J.; Can, C.

    1982-01-01

    This paper describes the use of a fast heavy ion beam to produce, by bombardment of gaseous targets, highly-charged low-velocity recoil ions, and the use of these secondary ions in turn as projectiles in studies of electron capture and ionization in low-energy collision systems. The interest in collisions involving low-energy highly-charged projectiles comes both from the somewhat simplifying aspects of the physics which attend the long-range capture and from applications to fusion plasmas, astrophysics and more speculative technology such as the production of X-ray lasers. The ions of interest in such applications should have both electronic excitation and center-of-mass energies in the keV range and cannot be produced by simply stripping fast heavy ion beams. Several novel types of ion source have been developed to produce low-energy highly-charged ions, of which the secondary ion recoil source discussed in this paper is one. (Auth.)

  12. Composition and carrier-concentration dependence of the electronic structure of InyGa1-yAs1-xNx films with nitrogen mole fraction of less than 0.012

    International Nuclear Information System (INIS)

    Kang, Youn-Seon; Robins, Lawrence H.; Birdwell, Anthony G.; Shapiro, Alexander J.; Thurber, W. Robert; Vaudin, Mark D.; Fahmi, M.M.E.; Bryson, Damian; Mohammad, S. Noor

    2005-01-01

    The electronic structure of Si-doped In y Ga 1-y As 1-x N x films on GaAs substrates, grown by nitrogen-plasma-assisted molecular-beam epitaxy, was examined by photoreflectance (PR) spectroscopy at temperatures between 20 and 300 K. The films were approximately 0.5 μm thick and had nitrogen mole fraction between x=0.0014 and x=0.012, measured indirectly by a secondary-ion-mass spectrometry calibration; indium mole fraction between y=0.052 and y=0.075, measured by electron-dispersive x-ray spectroscopy; and carrier concentration between 2x10 16 and 1.1x10 18 cm -3 , measured by Hall effect. Three critical-point transitions were identified by PR: the fundamental band gap (highest valence band to the lowest conduction band); the spin-orbit split valence band to the lowest conduction band; and the highest valence band to a nitrogen impurity band (above the lowest conduction band). The measured critical-point energies were described by a band anticrossing (BAC) model with the addition of a Burstein-Moss band-filling term. The fitted BAC parameters were similar to previously reported values. The N impurity level was located 0.3004±0.0101 eV above the conduction-band edge at 20 K and 0.3286±0.0089 eV above the conduction-band edge at 295 K. The BAC interaction parameter was 2.588±0.071 eV. From the small magnitude of the Burstein-Moss energy shift with increasing carrier concentration, it was inferred that the carrier concentration probed by PR is reduced from the bulk (Hall-effect) carrier concentration by a reduction factor of 0.266±0.145. The PR lines broadened with increasing carrier concentration; the line broadening tracked the predicted Burstein-Moss energy shift for the bulk carrier concentration. The surface-normal lattice constants of the films were measured by x-ray diffraction. Comparison of the measured lattice constants with Vegard's law showed the presence of tensile strain (in the surface-normal direction) with magnitude between 1.5x10 -3 and 3.0x10

  13. State of the art of High Temperature Power Electronics

    OpenAIRE

    Buttay , Cyril; Planson , Dominique; Allard , Bruno; Bergogne , Dominique; Bevilacqua , Pascal; Joubert , Charles; Lazar , Mihai; Martin , Christian; Morel , Hervé; Tournier , Dominique; Raynaud , Christophe

    2009-01-01

    International audience; High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500°C, whereas silicon is limited to 150-200°C. Applications such as transportation or deep oil and gas wells drilling can benefit. A few converters operating above 200°C have been demonstrated, but work is still ongoing to design and build a power system able to operate in...

  14. High-feedback Operation of Power Electronic Converters

    DEFF Research Database (Denmark)

    Zhusubaliyev, Zhanybai T.; Mosekilde, Erik; Andriyanov, Alexey I.

    2013-01-01

    The purpose of this review is to provide a survey of some of the most important bifurcation phenomena that one can observe in pulse-modulated converter systems when operating with high corrector gain factors. Like other systems with switching control, electronic converter systems belong...... to the class of piecewise-smooth dynamical systems. A characteristic feature of such systems is that the trajectory is “sewed” together from subsequent discrete parts. Moreover, the transitions between different modes of operation in response to a parameter variation are often qualitatively different from...

  15. Electron-positron annihilation at high luminosity colliding beams

    International Nuclear Information System (INIS)

    Grigoryan, G.V.; Khodzhamiryan, A.Yu.

    1977-01-01

    Experiments are discussed, which can be carried out at the electron-positron storage rings with increased luminosity (up to 10 34 cm -2 sec -1 ) and corresponding improvement of detectors at total energy region up to 10 GeV. This improvement of the experimental conditions may provide valuable physical information from the theoretical point of view. The comparison is made with analogous experimental possibilities of the projected high energy e + e - storage rings with luminosity up to 10 32 cm -2 sec -1

  16. Narrow beam dosimetry for high-energy hadrons and electrons

    CERN Document Server

    Pelliccioni, M; Ulrici, Luisa

    2001-01-01

    Organ doses and effective dose were calculated with the latest version of the Monte Carlo transport code FLUKA in the case of an anthropomorphic mathematical model exposed to monoenergetic narrow beams of protons, pions and electrons in the energy range 10°— 400 GeV. The target organs considered were right eye, thyroid, thymus, lung and breast. Simple scaling laws to the calculated values are given. The present data and formula should prove useful for dosimetric estimations in case of accidental exposures to high-energy beams.

  17. Highly Confined Electronic and Ionic Conduction in Oxide Heterostructures

    DEFF Research Database (Denmark)

    Pryds, Nini

    2015-01-01

    The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. In this talk I will present our recent results both on ionic and electronic conductivity at different heterostructures systems. In the first...... unattainable for Bi2O3-based materials, is achieved[1]. These confined heterostructures provide a playground not only for new high ionic conductivity phenomena that are sufficiently stable but also uncover a large variety of possible technological perspectives. At the second part, I will discuss and show our...

  18. High-resolution electron microscopy of detonation nanodiamond

    International Nuclear Information System (INIS)

    Iakoubovskii, K; Mitsuishi, K; Furuya, K

    2008-01-01

    The structure of individual nanodiamond grains produced by the detonation of carbon-based explosives has been studied with a high-vacuum aberration-corrected electron microscope. Many grains show a well-resolved cubic diamond lattice with negligible contamination, thereby demonstrating that the non-diamond shell, universally observed on nanodiamond particles, could be intrinsic to the preparation process rather than to the nanosized diamond itself. The strength of the adhesion between the nanodiamond grains, and the possibility of their patterning with sub-nanometer precision, are also demonstrated

  19. High-resolution electron microscopy of detonation nanodiamond

    Energy Technology Data Exchange (ETDEWEB)

    Iakoubovskii, K; Mitsuishi, K [Quantum Dot Research Center, National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-0005 (Japan); Furuya, K [High Voltage Microscopy Station, National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-0005 (Japan)], E-mail: Iakoubovskii.Konstantin@nims.go.jp

    2008-04-16

    The structure of individual nanodiamond grains produced by the detonation of carbon-based explosives has been studied with a high-vacuum aberration-corrected electron microscope. Many grains show a well-resolved cubic diamond lattice with negligible contamination, thereby demonstrating that the non-diamond shell, universally observed on nanodiamond particles, could be intrinsic to the preparation process rather than to the nanosized diamond itself. The strength of the adhesion between the nanodiamond grains, and the possibility of their patterning with sub-nanometer precision, are also demonstrated.

  20. Void shrinkage in stainless steel during high energy electron irradiation

    International Nuclear Information System (INIS)

    Singh, B.N.; Foreman, A.J.E.

    1976-03-01

    During irradiation of thin foils of an austenitic stainless steel in a high voltage electron microscope, steadily growing voids have been observed to suddenly shrink and disappear at the irradiation temperature of 650 0 Cthe phenomenon has been observed in specimens both with and withoutimplanted helium. Possible mechanisms for void shrinkage during irradiation are considered. It is suggested that the dislocation-pipe-diffusion of vacancies from or of self-interstitial atoms to the voids can explain the shrinkage behaviour of voids observed during our experiments. (author)

  1. Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit.

    Science.gov (United States)

    Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

    2016-01-08

    One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3  nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

  2. High voltage high brightness electron accelerator with MITL voltage adder coupled to foilless diode

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Poulkey, J.W.; Rovang, D.

    1995-01-01

    The design and analysis of a high brightness electron beam experiment under construction at Sandia National Laboratory is presented. The beam energy is 12 MeV, the current 35-40 kA, the rms radius 0.5 mm, and the pulse duration FWHM 40 ns. The accelerator is SABRE a pulsed inductive voltage adder, and the electron source is a magnetically immersed foilless diode. This experiment has as its goal to stretch the technology to the edge and produce the highest possible electron current in a submillimeter radius beam

  3. Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

    International Nuclear Information System (INIS)

    Pearson, J.L.

    1999-03-01

    Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

  4. Electronic and magnetic interactions in high temperature superconducting and high coercivity materials. Final performance report

    International Nuclear Information System (INIS)

    Cooper, B.R.

    1997-01-01

    The issue addressed in the research was how to understand what controls the competition between two types of phase transition (ordering) which may be present in a hybridizing correlated-electron system containing two transition-shell atomic species; and how the variation of behavior observed can be used to understand the mechanisms giving the observed ordered state. This is significant for understanding mechanisms of high-temperature superconductivity and other states of highly correlated electron systems. Thus the research pertains to magnetic effects as related to interactions giving high temperature superconductivity; where the working hypothesis is that the essential feature governing the magnetic and superconducting behavior of copper-oxide-type systems is a cooperative valence fluctuation mechanism involving the copper ions, as mediated through hybridization effects dominated by the oxygen p electrons. (Substitution of praseodymium at the rare earth sites in the 1·2·3 material provides an interesting illustration of this mechanism since experimentally such substitution strongly suppresses and destroys the superconductivity; and, at 100% Pr, gives Pr f-electron magnetic ordering at a temperature above 16K). The research was theoretical and computational and involved use of techniques aimed at correlated-electron systems that can be described within the confines of model hamiltonians such as the Anderson lattice hamiltonian. Specific techniques used included slave boson methodology used to treat modification of electronic structure and the Mori projection operator (memory function) method used to treat magnetic response (dynamic susceptibility)

  5. Organic-inorganic hybrid perovskite quantum dots with high PLQY and enhanced carrier mobility through crystallinity control by solvent engineering and solid-state ligand exchange.

    Science.gov (United States)

    Woo Choi, Jin; Woo, Hee Chul; Huang, Xiaoguang; Jung, Wan-Gil; Kim, Bong-Joong; Jeon, Sie-Wook; Yim, Sang-Youp; Lee, Jae-Suk; Lee, Chang-Lyoul

    2018-05-22

    The photoluminescence quantum yield (PLQY) and charge carrier mobility of organic-inorganic perovskite QDs were enhanced by the optimization of crystallinity and surface passivation as well as solid-state ligand exchange. The crystallinity of perovskite QDs was determined by the Effective solvent field (Esol) of various solvents for precipitation. The solvent with high Esol could more quickly countervail the localized field generated by the polar solvent, and it causes fast crystallization of the dissolved precursor, which results in poor crystallinity. The post-ligand adding process (PLAP) and post-ligand exchange process (PLEP) increase the PLQY of perovskite QDs by reducing non-radiative recombination and the density of surface defect states through surface passivation. Particularly, the post ligand exchange process (PLEP) in the solid-state improved the charge carrier mobility of perovskite QDs in addition to the PLQY enhancement. The ligand exchange with short alkyl chain length ligands could improve the packing density of perovskite QDs in films by reducing the inter-particle distance between perovskite QDs. The maximum hole mobility of 6.2 × 10-3 cm2 V-1 s-1, one order higher than that of pristine QDs without the PLEP, is obtained at perovskite QDs with hexyl ligands. By using PLEP treatment, compared to the pristine device, a 2.5 times higher current efficiency in perovskite QD-LEDs was achieved due to the improved charge carrier mobility and PLQY.

  6. High definition in-situ electro-optical characterization for Roll to Roll printed electronics

    DEFF Research Database (Denmark)

    Pastorelli, Francesco

    2017-01-01

    Resume: Printed electronics is emerging as a new, large scale and cost effective technology that will be disruptive in fields such as energy harvesting, consumer electronics and medical sensors. The performance of printed organic electronic devices relies principally on the carrier mobility...... and molecular packing of the polymer semiconductor material. Unfortunately, the analysis of such materials is generally performed with destructive techniques, which are hard to make compatible with in situ measurements, and pose a great obstacle for the mass production of printed electronics devices. A rapid......-photon induced photoluminescence (TPPL) and second harmonic response. We anticipate that this non-linear optical method will substantially contribute to the understanding of printed electronic devices and demonstrate it as a promising novel tool for non-destructive and facile testing of materials during printing...

  7. Characterisation of 100 kW electron beam melting gun and its adaptation as electron gun for high power DC electron accelerators

    International Nuclear Information System (INIS)

    Banerjee, Srutarshi; Bhattacharjee, Dhruva; Waghmare, Abhay; Tiwari, Rajnish; Bakhtsingh, R.I.; Dasgupta, K.; Gupta, Sachin; Prakash, Baibhaw; Jha, M.N.

    2015-01-01

    The paper deals with the characterization of the 100 kW electron beam melting gun for its adaptation in high power DC Electron Accelerators. The indigenously designed electron beam melting system at BARC is chosen for characterization. It comprises of electron gun as source of electrons, two electromagnetic focusing lenses viz. upper focusing lens and lower focusing lens for beam focusing, intermediate beam aperture for vacuum decoupling between gun region and melt zone, deflection and oscillation lens for maneuvering the beam on the melt charge and water cooled crucible that acts as a beam dump. In this system, the electron gun is designed for 40 kV and 100 kW corresponding to a maximum beam current of 2.5 A. The electron gun uses directly heated spiral tungsten filament. The operating temperature of the filament is 2800 °K. The focusing electrode and the anode profile are designed based on Pierce geometry. High Power DC Electron Accelerators require high currents of 1 A. The beam must comply with the requirement of 40 mm beam diameter and 10 mrad divergence at the exit of the electron gun. The characterization of the existing electron gun was done to find out all the beam parameters, for e.g. beam size, beam divergence, perveance etc. to be adapted or to be modified for the design of electron gun for high power DC accelerators. This paper shows limitations and the possible solutions for design of high power DC accelerators. (author)

  8. Electron impact ionization of highly charged lithiumlike ions

    International Nuclear Information System (INIS)

    Wong, K.L.

    1992-10-01

    Electron impact ionization cross sections can provide valuable information about the charge-state and power balance of highly charged ions in laboratory and astrophysical plasmas. In the present work, a novel technique based on x-ray measurements has been used to infer the ionization cross section of highly charged lithiumlike ions on the Livermore electron beam ion trap. In particular, a correspondence is established between an observed x ray and an ionization event. The measurements are made at one energy corresponding to approximately 2.3 times the threshold energy for ionization of lithiumlike ions. The technique is applied to the transition metals between Z=22 (titanium, Ti 19+ ) and Z=26 (iron, Fe 23+ ) and to Z=56 (barium, Ba 53+ ). The results for the transition metals, which have an estimated 17-33% uncertainty, are in good overall agreement with a relativistic distorted-wave calculation. However, less good agreement is found for barium, which has a larger uncertainty. Methods for properly accounting for the polarization in the x-ray intensities and for inferring the charge-state abundances from x-ray observations, which were developed for the ionization measurements, as well as an x-ray model that assists in the proper interpretation of the data are also presented

  9. Silicon nanowire based high brightness, pulsed relativistic electron source

    Directory of Open Access Journals (Sweden)

    Deep Sarkar

    2017-06-01

    Full Text Available We demonstrate that silicon nanowire arrays efficiently emit relativistic electron pulses under irradiation by a high-intensity, femtosecond, and near-infrared laser (∼1018 W/cm2, 25 fs, 800 nm. The nanowire array yields fluxes and charge per bunch that are 40 times higher than those emitted by an optically flat surface, in the energy range of 0.2–0.5 MeV. The flux and charge yields for the nanowires are observed to be directional in nature unlike that for planar silicon. Particle-in-cell simulations establish that such large emission is caused by the enhancement of the local electric fields around a nanowire, which consequently leads to an enhanced absorption of laser energy. We show that the high-intensity contrast (ratio of picosecond pedestal to femtosecond peak of the laser pulse (10−9 is crucial to this large yield. We extend the notion of surface local-field enhancement, normally invoked in low-order nonlinear optical processes like second harmonic generation, optical limiting, etc., to ultrahigh laser intensities. These electron pulses, expectedly femtosecond in duration, have potential application in imaging, material modification, ultrafast dynamics, terahertz generation, and fast ion sources.

  10. Highly Stretchable and Conductive Superhydrophobic Coating for Flexible Electronics.

    Science.gov (United States)

    Su, Xiaojing; Li, Hongqiang; Lai, Xuejun; Chen, Zhonghua; Zeng, Xingrong

    2018-03-28

    Superhydrophobic materials integrating stretchability with conductivity have huge potential in the emerging application horizons such as wearable electronic sensors, flexible power storage apparatus, and corrosion-resistant circuits. Herein, a facile spraying method is reported to fabricate a durable superhydrophobic coating with excellent stretchable and electrical performance by combing 1-octadecanethiol-modified silver nanoparticles (M-AgNPs) with polystyrene- b-poly(ethylene- co-butylene)- b-polystyrene (SEBS) on a prestretched natural rubber (NR) substrate. The embedding of M-AgNPs in elastic SEBS matrix and relaxation of prestretched NR substrate construct hierarchical rough architecture and endow the coating with dense charge-transport pathways. The fabricated coating exhibits superhydrophobicity with water contact angle larger than 160° and a high conductivity with resistance of about 10 Ω. The coating not only maintains superhydrophobicity at low/high stretch ratio for the newly generated small/large protuberances but also responds to stretching and bending with good sensitivity, broad sensing range, and stable response cycles. Moreover, the coating exhibits excellent durability to heat and strong acid/alkali and mechanical forces including droplet impact, kneading, torsion, and repetitive stretching-relaxation. The findings conceivably stand out as a new tool to fabricate multifunctional superhydrophobic materials with excellent stretchability and conductivity for flexible electronics under wet or corrosive environments.

  11. High Pressure X-ray Absorption Studies on Correlated-Electron Systems

    International Nuclear Information System (INIS)

    Cornelius, Andrew L.

    2016-01-01

    This project used high pressure to alter the electron-electron and electron-lattice interactions in rare earth and actinide compounds. Knowledge of these properties is the starting points for a first-principles understanding of electronic and electronically related macroscopic properties. The research focused on a systematic study of x-ray absorption measurements on rare earth and actinide compounds.

  12. Reliability of high power electron accelerators for radiation processing

    International Nuclear Information System (INIS)

    Zimek, Z.

    2011-01-01

    Accelerators applied for radiation processing are installed in industrial facilities where accelerator availability coefficient should be at the level of 95% to fulfill requirements according to industry standards. Usually the exploitation of electron accelerator reviles the number of short and few long lasting failures. Some technical shortages can be overcome by practical implementation the experience gained in accelerator technology development by different accelerator manufactures. The reliability/availability of high power accelerators for application in flue gas treatment process must be dramatically improved to meet industrial standards. Support of accelerator technology dedicated for environment protection should be provided by governmental and international institutions to overcome accelerator reliability/availability problem and high risk and low direct profit in this particular application. (author)

  13. High voltage processing of the SLC polarized electron gun

    International Nuclear Information System (INIS)

    Saez, P.; Clendenin, J.; Garden, C.; Hoyt, E.; Klaisner, L.; Prescott, C.; Schultz, D.; Tang, H.

    1993-04-01

    The SLC polarized electron gun operates at 120 kV with very low dark current to maintain the ultra high vacuum (UHV). This strict requirement protects the extremely sensitive photocathode from contaminants caused by high voltage (HV) activity. Thorough HV processing is thus required x-ray sensitive photographic film, a nanoammeter in series with gun power supply, a radiation meter, a sensitive residual gas analyzer and surface x-ray spectrometry were used to study areas in the gun where HV activity occurred. By reducing the electric field gradients, carefully preparing the HV surfaces and adhering to very strict clean assembly procedures, we found it possible to process the gun so as to reduce both the dark current at operating voltage and the probability of HV discharge. These HV preparation and processing techniques are described

  14. Reliability of high power electron accelerators for radiation processing

    Energy Technology Data Exchange (ETDEWEB)

    Zimek, Z. [Department of Radiation Chemistry and Technology, Institute of Nuclear Chemistry and Technology, Warsaw (Poland)

    2011-07-01

    Accelerators applied for radiation processing are installed in industrial facilities where accelerator availability coefficient should be at the level of 95% to fulfill requirements according to industry standards. Usually the exploitation of electron accelerator reviles the number of short and few long lasting failures. Some technical shortages can be overcome by practical implementation the experience gained in accelerator technology development by different accelerator manufactures. The reliability/availability of high power accelerators for application in flue gas treatment process must be dramatically improved to meet industrial standards. Support of accelerator technology dedicated for environment protection should be provided by governmental and international institutions to overcome accelerator reliability/availability problem and high risk and low direct profit in this particular application. (author)

  15. Dose-dependent high-resolution electron ptychography

    International Nuclear Information System (INIS)

    D'Alfonso, A. J.; Allen, L. J.; Sawada, H.; Kirkland, A. I.

    2016-01-01

    Recent reports of electron ptychography at atomic resolution have ushered in a new era of coherent diffractive imaging in the context of electron microscopy. We report and discuss electron ptychography under variable electron dose conditions, exploring the prospects of an approach which has considerable potential for imaging where low dose is needed

  16. Introduction to electronics and applications in high energy physics

    CERN Multimedia

    CERN. Geneva

    2004-01-01

    Electronics in HEP experiments: specificities and evolution The Art of Electronics: is there something beyond Ohm's law? Basic building blocks of Analog electronics: quickly understanding a schematic Charge preamps, current preamps and future preamps, shaping and the rest Electronics noise: fundamental and practical Evolution of technology: ASICs, FPGAs...

  17. Mesoporous Zn2SnO4 as effective electron transport materials for high-performance perovskite solar cells

    International Nuclear Information System (INIS)

    Bao, Sha; Wu, Jihuai; He, Xin; Tu, Yongguang; Wang, Shibo; Huang, Miaoliang; Lan, Zhang

    2017-01-01

    Highlights: •Large grain and mesoporous Zn 2 SnO 4 are synthesized by a facile hydrothermal method. •Perovskite device with Zn 2 SnO 4 electron transport layer get efficiency of 17.21%. •While the device with TiO 2 electron transport layer obtain an efficiency of 14.83%. •Superior photovoltaic performance stems from the intrinsic characteristics of Zn 2 SnO 4 . -- Abstract: Electron transport layer with higher carrier mobility and suitable band gap structure plays a significant role in determining the photovoltaic performance of perovskite solar cells (PSCs). Here, we report a synthesis of high crystalline zinc stannate (Zn 2 SnO 4 ) by a facile hydrothermal method. The as-synthesized Zn 2 SnO 4 possesses particle size of 20 nm, large surface area, mesoporous hierarchical structure, and can be used as a promising electron-transport materials to replace the conventional mesoporous TiO 2 material. A perovskite solar cell with structure of FTO/blocking layer/Zn 2 SnO 4 /CH 3 NH 3 PbI 3 /Spiro-OMeOTAD/Au is fabricated, and the preparation condition is optimized. The champion device based on Zn 2 SnO 4 electron transport material achieves a power conversion efficiency of 17.21%, while the device based on TiO 2 electron transport material gets an efficiency of 14.83% under the same experimental conditions. The results render Zn 2 SnO 4 an effective candidate as electron transport material for high performance perovskite solar cells and other devices.

  18. High power, high brightness electron beam generation in a pulse-line driven pseudospark discharge

    International Nuclear Information System (INIS)

    Destler, W.W.; Segalov, Z.; Rodgers, J.; Ramaswamy, K.; Reiser, M.

    1993-01-01

    High brightness (∼10 10 A/m 2 rad 2 ), high power density (∼10 10 W/cm 2 ) electron beams have been generated by the mating of a hollow-cathode discharge device operating in the pseudospark regime to the output of a high power pulse line accelerator. Very small diameter (∼1 mm) electron beams with currents in the range 500--1000 A and energies in the range 150--300 keV have been generated with effective emittances estimated to be at or below 170 mm mrad. Such emittances are comparable to those achieved in conventional electron beam sources at current densities several orders of magnitude lower than those observed in these experiments

  19. Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

    Science.gov (United States)

    Cleary, Justin W.; Peale, Robert E.; Saxena, Himanshu; Buchwald, Walter R.

    2011-05-01

    The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gate-voltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and sheet charge concentration are taken into account. The FEM results are shown to produce results consistent with standard analytical theories in the 10-100 cm-1 wavenumber range. An original analytic formula presented here describes how the plasmonic resonance may change in the presence of a virtual gate, or region of relatively high free charge carriers that lies in the HEMT between the physical grating gate and the 2DEG. The virtual gate and corresponding analytic formulation are able to account for the red-shifting experimentally observed in plasmonic resonances. The calculation methods demonstrated here have the potential to greatly aid in the design of future detection devices that require specifically tuned plasmonic modes in the 2DEG of a HEMT, as well as giving new insights to aid in the development of more complete analytic theories.

  20. High-Energy Electron Confinement in a Magnetic Cusp Configuration

    Directory of Open Access Journals (Sweden)

    Jaeyoung Park

    2015-06-01

    Full Text Available We report experimental results validating the concept that plasma confinement is enhanced in a magnetic cusp configuration when β (plasma pressure/magnetic field pressure is of order unity. This enhancement is required for a fusion power reactor based on cusp confinement to be feasible. The magnetic cusp configuration possesses a critical advantage: the plasma is stable to large scale perturbations. However, early work indicated that plasma loss rates in a reactor based on a cusp configuration were too large for net power production. Grad and others theorized that at high β a sharp boundary would form between the plasma and the magnetic field, leading to substantially smaller loss rates. While not able to confirm the details of Grad’s work, the current experiment does validate, for the first time, the conjecture that confinement is substantially improved at high β. This represents critical progress toward an understanding of the plasma dynamics in a high-β cusp system. We hope that these results will stimulate a renewed interest in the cusp configuration as a fusion confinement candidate. In addition, the enhanced high-energy electron confinement resolves a key impediment to progress of the Polywell fusion concept, which combines a high-β cusp configuration with electrostatic fusion for a compact, power-producing nuclear fusion reactor.