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Sample records for high electron mobility

  1. High electron mobility InN

    International Nuclear Information System (INIS)

    Jones, R. E.; Li, S. X.; Haller, E. E.; van Genuchten, H. C. M.; Yu, K. M.; Ager, J. W. III; Liliental-Weber, Z.; Walukiewicz, W.; Lu, H.; Schaff, W. J.

    2007-01-01

    Irradiation of InN films with 2 MeV He + ions followed by thermal annealing below 500 deg. C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility

  2. Kinase detection with gallium nitride based high electron mobility transistors.

    Science.gov (United States)

    Makowski, Matthew S; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena

    2013-07-01

    A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

  3. Ultimate response time of high electron mobility transistors

    International Nuclear Information System (INIS)

    Rudin, Sergey; Rupper, Greg; Shur, Michael

    2015-01-01

    We present theoretical studies of the response time of the two-dimensional gated electron gas to femtosecond pulses. Our hydrodynamic simulations show that the device response to a short pulse or a step-function signal is either smooth or oscillating time-decay at low and high mobility, μ, values, respectively. At small gate voltage swings, U 0  = U g  − U th , where U g is the gate voltage and U th is the threshold voltage, such that μU 0 /L < v s , where L is the channel length and v s is the effective electron saturation velocity, the decay time in the low mobility samples is on the order of L 2 /(μU 0 ), in agreement with the analytical drift model. However, the decay is preceded by a delay time on the order of L/s, where s is the plasma wave velocity. This delay is the ballistic transport signature in collision-dominated devices, which becomes important during very short time periods. In the high mobility devices, the period of the decaying oscillations is on the order of the plasma wave velocity transit time. Our analysis shows that short channel field effect transistors operating in the plasmonic regime can meet the requirements for applications as terahertz detectors, mixers, delay lines, and phase shifters in ultra high-speed wireless communication circuits

  4. Patterning of high mobility electron gases at complex oxide interfaces

    DEFF Research Database (Denmark)

    Trier, Felix; Prawiroatmodjo, G. E. D. K.; von Soosten, Merlin

    2015-01-01

    Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects...... of amorphous-LSM (a-LSM) thin films, which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ∼8 700 cm2/V s at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually...... where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous-LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching...

  5. Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

    Science.gov (United States)

    Zhang, Panlong; Wang, Haibo; Yan, Donghang

    2017-09-01

    A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Charge fluctuations in high-electron-mobility transistors: a review

    International Nuclear Information System (INIS)

    Green, F.

    1993-01-01

    The quasi-two-dimensional carrier population, free to move within a near-perfect crystalline matrix, is the key to remarkable improvements in signal gain, current density and quiet operation. Current-fluctuation effects are central to all of these properties. Some of these are easily understood within linear-response theory, but other fluctuation phenomena are less tractable. In particular, nonequilibrium noise poses significant theoretical challenges, both descriptive and predictive. This paper examines a few of the basic physical issues which motivate device-noise theory. The structure and operation of high-electron-mobility transistor are first reviewed. The recent nonlinear fluctuation theory of Stanton and Wilkins (1987) help to identify at least some of the complicated noise physics which can arise when carriers in GaAs-like conduction bands are subjected to high fields. Simple examples of fluctuation-dominated behaviour are discussed, with numerical illustrations. 20 refs., 9 figs

  7. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka; Inagaki, Makoto; Yamaguchi, Masafumi

    2012-01-01

    We report the highest mobility values above 2000 cm 2 /Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  8. Mobilities of slow electrons in low- and high-pressure gases and liquids

    International Nuclear Information System (INIS)

    Christophorou, L.G.

    1975-01-01

    Mobilities of slow (thermal and epithermal) electrons in low- (less than or approximately 500 Torr) and high- (approximately 500 to approximately 34,111 Torr) pressure gases are discussed and are related to the molecular structure and to the mobilities of thermal electrons in liquid media

  9. Thermal Investigation of Three-Dimensional GaN-on-SiC High Electron Mobility Transistors

    Science.gov (United States)

    2017-07-01

    University of L’Aquila, (2011). 23 Rao, H. & Bosman, G. Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors. Solid...AFRL-RY-WP-TR-2017-0143 THERMAL INVESTIGATION OF THREE- DIMENSIONAL GaN-on-SiC HIGH ELECTRON MOBILITY TRANSISTORS Qing Hao The University of Arizona...clarification memorandum dated 16 Jan 09. This report is available to the general public, including foreign nationals. Copies may be obtained from the

  10. High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

    KAUST Repository

    Hou, Zhipeng; Wang, Wenhong; Xu, Guizhou; Zhang, Xiaoming; Wei, Zhiyang; Shen, Shipeng; Liu, Enke; Yao, Yuan; Chai, Yisheng; Sun, Young; Xi, Xuekui; Wang, Wenquan; Liu, Zhongyuan; Wu, Guangheng; Zhang, Xixiang

    2015-01-01

    Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole

  11. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Reza, Shahed; Chumbes, Eduardo M. [Raytheon Integrated Defense Systems, Andover, Massachusetts 01810 (United States); Khurgin, Jacob [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2015-10-12

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

  12. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Bajaj, Sanyam; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang; Reza, Shahed; Chumbes, Eduardo M.; Khurgin, Jacob; Rajan, Siddharth

    2015-01-01

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10 7  cm/s at a low sheet charge density of 7.8 × 10 11  cm −2 . An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs

  13. High Thermoelectric Power Factor of High-Mobility 2D Electron Gas.

    Science.gov (United States)

    Ohta, Hiromichi; Kim, Sung Wng; Kaneki, Shota; Yamamoto, Atsushi; Hashizume, Tamotsu

    2018-01-01

    Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower ( S ), high electrical conductivity (σ), and low thermal conductivity (κ). State-of-the-art nanostructuring techniques that significantly reduce κ have realized high-performance thermoelectric materials with a figure of merit ( ZT = S 2 ∙σ∙ T ∙κ -1 ) between 1.5 and 2. Although the power factor (PF = S 2 ∙σ) must also be enhanced to further improve ZT , the maximum PF remains near 1.5-4 mW m -1 K -2 due to the well-known trade-off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and σ of the high-mobility electron gas from -490 µV K -1 and ≈10 -1 S cm -1 to -90 µV K -1 and ≈10 4 S cm -1 , while maintaining a high carrier mobility (≈1500 cm 2 V -1 s -1 ). The maximized PF of the high-mobility electron gas is ≈9 mW m -1 K -2 , which is a two- to sixfold increase compared to state-of-the-art practical thermoelectric materials.

  14. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    National Research Council Canada - National Science Library

    Holmes, Kenneth

    2002-01-01

    Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

  15. Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor

    International Nuclear Information System (INIS)

    Lee, Jongkyong; Gang, Suhyun; Jo, Yongcheol; Kim, Jongmin; Woo, Hyeonseok; Han, Jaeseok; Kim, Hyungsang; Im, Hyunsik

    2014-01-01

    We have investigated the temperature dependence of ballistic mobility in a 100 nm-long InGaAs/InAlAs metamorphic high-electron-mobility transistor designed for millimeter-wavelength RF applications. To extract the temperature dependence of quasi-ballistic mobility, our experiment involves measurements of the effective mobility in the low-bias linear region of the transistor and of the collision-dominated Hall mobility using a gated Hall bar of the same epitaxial structure. The data measured from the experiment are consistent with that of modeled ballistic mobility based on ballistic transport theory. These results advance the understanding of ballistic transport in various transistors with a nano-scale channel length that is comparable to the carrier's mean free path in the channel.

  16. High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi

    KAUST Repository

    Hou, Zhipeng

    2015-12-18

    Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000cm2/Vs with a nonsaturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov–de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our findings provide a different approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

  17. Electron drift time in silicon drift detectors: A technique for high precision measurement of electron drift mobility

    International Nuclear Information System (INIS)

    Castoldi, A.; Rehak, P.

    1995-01-01

    This paper presents a precise absolute measurement of the drift velocity and mobility of electrons in high resistivity silicon at room temperature. The electron velocity is obtained from the differential measurement of the drift time of an electron cloud in a silicon drift detector. The main features of the transport scheme of this class of detectors are: the high uniformity of the electron motion, the transport of the signal electrons entirely contained in the high-purity bulk, the low noise timing due to the very small anode capacitance (typical value 100 fF), and the possibility to measure different drift distances, up to the wafer diameter, in the same semiconductor sample. These features make the silicon drift detector an optimal device for high precision measurements of carrier drift properties. The electron drift velocity and mobility in a 10 kΩ cm NTD n-type silicon wafer have been measured as a function of the electric field in the range of possible operation of a typical drift detector (167--633 V/cm). The electron ohmic mobility is found to be 1394 cm 2 /V s. The measurement precision is better than 1%. copyright 1995 American Institute of Physics

  18. Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures

    International Nuclear Information System (INIS)

    Fedoryshyn, Yuriy; Ostinelli, Olivier; Alt, Andreas; Pallin, Angel; Bolognesi, Colombo R.

    2014-01-01

    The optimization of heavily strained Ga 0.25 In 0.75 As/Al 0.48 In 0.52 As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm 2 /Vs and 70 000 cm 2 /Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10 12  cm −2 throughout the entire study

  19. Increase in electron mobility of InGaAs/InP composite channel high electron mobility transistor structure due to SiN passivation

    International Nuclear Information System (INIS)

    Liu Yuwei; Wang Hong; Radhakrishnan, K.

    2007-01-01

    The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structure has been studied. Different from the structures with single InGaAs channel, an increase in effective mobility μ e with a negligible change of sheet carrier density n s after SiN deposition is clearly observed in the composite channel structures. The enhancement of μ e could be explained under the framework of electrons transferring from the InP sub-channel into InGaAs channel region due to the energy band bending at the surface region caused by SiN passivation, which is further confirmed by low temperature photoluminescence measurements

  20. High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

    Science.gov (United States)

    Hou, H. W.; Liu, Z.; Teng, J. H.; Palacios, T.; Chua, S. J.

    2017-04-01

    In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.

  1. High Magnetic Field in THz Plasma Wave Detection by High Electron Mobility Transistors

    Science.gov (United States)

    Sakowicz, M.; Łusakowski, J.; Karpierz, K.; Grynberg, M.; Valusis, G.

    The role of gated and ungated two dimensional (2D) electron plasma in THz detection by high electron mobility transistors (HEMTs) was investigated. THz response of GaAs/AlGaAs and GaN/AlGaN HEMTs was measured at 4.4K in quantizing magnetic fields with a simultaneous modulation of the gate voltage UGS. This allowed us to measure both the detection signal, S, and its derivative dS/dUGS. Shubnikov - de-Haas oscillations (SdHO) of both S and dS/dUGS were observed. A comparison of SdHO observed in detection and magnetoresistance measurements allows us to associate unambiguously SdHO in S and dS/dUGS with the ungated and gated parts of the transistor channel, respectively. This allows us to conclude that the entire channel takes part in the detection process. Additionally, in the case of GaAlAs/GaAs HEMTs, a structure related to the cyclotron resonance transition was observed.

  2. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Tan Ren-Bing; Qin Hua; Zhang Xiao-Yu; Xu Wen

    2013-01-01

    We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi—Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi—Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source—drain bias voltage besides the gate voltage (change of the electron density)

  3. Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

    International Nuclear Information System (INIS)

    Pearson, J.L.

    1999-03-01

    Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

  4. Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors

    Science.gov (United States)

    2017-03-01

    non - ionizing proton radiation damage effects at different energy levels on a GaN-on-silicon high electron mobility transistor...DISTRIBUTION CODE 13. ABSTRACT (maximum 200 words) In this work, a physics-based simulation of non - ionizing proton radiation damage effects at different...Polarization . . . . . . . . . . . . . . 6 2.3 Non - Ionizing Radiation Damage Effects . . . . . . . . . . . . . . . 10 2.4 Non - Ionizing Radiation Damage in

  5. Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pelliccione, M. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106 (United States); Bartel, J.; Goldhaber-Gordon, D. [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States); Sciambi, A. [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Pfeiffer, L. N.; West, K. W. [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-11-03

    Correlated electron states in high mobility two-dimensional electron systems (2DESs), including charge density waves and microemulsion phases intermediate between a Fermi liquid and Wigner crystal, are predicted to exhibit complex local charge order. Existing experimental studies, however, have mainly probed these systems at micron to millimeter scales rather than directly mapping spatial organization. Scanning probes should be well-suited to study the spatial structure of these states, but high mobility 2DESs are found at buried semiconductor interfaces, beyond the reach of conventional scanning tunneling microscopy. Scanning techniques based on electrostatic coupling to the 2DES deliver important insights, but generally with resolution limited by the depth of the 2DES. In this letter, we present our progress in developing a technique called “virtual scanning tunneling microscopy” that allows local tunneling into a high mobility 2DES. Using a specially designed bilayer GaAs/AlGaAs heterostructure where the tunnel coupling between two separate 2DESs is tunable via electrostatic gating, combined with a scanning gate, we show that the local tunneling can be controlled with sub-250 nm resolution.

  6. N-polar GaN epitaxy and high electron mobility transistors

    International Nuclear Information System (INIS)

    Wong, Man Hoi; Keller, Stacia; Dasgupta, Nidhi Sansaptak; Denninghoff, Daniel J; Kolluri, Seshadri; Brown, David F; Lu, Jing; Fichtenbaum, Nicholas A; Ahmadi, Elaheh; DenBaars, Steven P; Speck, James S; Mishra, Umesh K; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth

    2013-01-01

    This paper reviews the progress of N-polar (0001-bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized. (invited review)

  7. The operation cutoff frequency of high electron mobility transistor measured by terahertz method

    International Nuclear Information System (INIS)

    Zhu, Y. M.; Zhuang, S. L.

    2014-01-01

    Commonly, the cutoff frequency of high electron mobility transistor (HEMT) can be measured by vector network analyzer (VNA), which can only measure the sample exactly in low frequency region. In this paper, we propose a method to evaluate the cutoff frequency of HEMT by terahertz (THz) technique. One example shows the cutoff frequency of our HEMT is measured at ∼95.30 GHz, which is reasonable agreement with that estimated by VNA. It is proved THz technology a potential candidate for the substitution of VNA for the measurement of high-speed devices even up to several THz.

  8. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

    International Nuclear Information System (INIS)

    Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

    2010-01-01

    We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

  9. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    International Nuclear Information System (INIS)

    Du, Juan; Xia, Congxin; Liu, Yaming; Li, Xueping; Peng, Yuting; Wei, Shuyi

    2017-01-01

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm 2 V −1 s −1 ), which is much higher than that of MoS 2 monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm 2 V −1 s −1 ), which is higher than that of MoS 2 monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm 2 V −1 s −1 , which is much higher than that of MoS 2 monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  10. Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility

    Energy Technology Data Exchange (ETDEWEB)

    Du, Juan [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Xia, Congxin, E-mail: xiacongxin@htu.edu.cn [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Liu, Yaming [Henan Institute of Science and Technology, Xinxiang 453003 (China); Li, Xueping [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China); Peng, Yuting [Department of Physics, University of Texas at Arlington, TX 76019 (United States); Wei, Shuyi [College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007 (China)

    2017-04-15

    Graphical abstract: SnO monolayer is a p-type transparent semiconducting oxide with high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is much higher than that of MoS{sub 2} monolayer, which indicate that it can be a promising candidate for high-performance nanoelectronic devices. Display Omitted - Highlights: • SnO monolayer is a p-type transparent semiconducting oxide. • The transparent properties can be still maintained under the strain 8%. • It has a high hole mobility (∼641 cm{sup 2} V{sup −1} s{sup −1}), which is higher than that of MoS{sub 2} monolayer. - Abstract: More recently, two-dimensional (2D) SnO nanosheets are attaching great attention due to its excellent carrier mobility and transparent characteristics. Here, the stability, electronic structures and carrier mobility of SnO monolayer are investigated by using first-principles calculations. The calculations of the phonon dispersion spectra indicate that SnO monolayer is dynamically stable. Moreover, the band gap values are decreased from 3.93 eV to 2.75 eV when the tensile strain is applied from 0% to 12%. Interestingly, SnO monolayer is a p-type transparent semiconducting oxide with hole mobility of 641 cm{sup 2} V{sup −1} s{sup −1}, which is much higher than that of MoS{sub 2} monolayer. These findings make SnO monolayer becomes a promising 2D material for applications in nanoelectronic devices.

  11. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

    International Nuclear Information System (INIS)

    Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Chow, P. P.; Look, D. C.

    2008-01-01

    Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (>1800 cm 2 /V s) and sheet charge density (>3x10 13 cm -2 ), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼100 Ω/□ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼1.3 A/mm and a peak transconductance of ∼260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

  12. Botulinum toxin detection using AlGaN /GaN high electron mobility transistors

    Science.gov (United States)

    Wang, Yu-Lin; Chu, B. H.; Chen, K. H.; Chang, C. Y.; Lele, T. P.; Tseng, Y.; Pearton, S. J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P. P.; Ren, F.

    2008-12-01

    Antibody-functionalized, Au-gated AlGaN /GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN /GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng/ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN /GaN HEMTs for botulinum toxin detection.

  13. Study of surface leakage current of AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

    2014-01-01

    Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

  14. Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system.

    Science.gov (United States)

    Wang, Zhuo; Samaraweera, R L; Reichl, C; Wegscheider, W; Mani, R G

    2016-12-07

    Electron-heating induced by a tunable, supplementary dc-current (I dc ) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing I dc , yielding negative giant-magnetoresistance at the lowest temperature and highest I dc . A two-term Drude model successfully fits the data at all I dc and T. The results indicate that carrier heating modifies a conductivity correction σ 1 , which undergoes sign reversal from positive to negative with increasing I dc , and this is responsible for the observed crossover from positive- to negative- magnetoresistance, respectively, at the highest B.

  15. Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Krishtopenko, S. S., E-mail: sergey.krishtopenko@mail.ru; Gavrilenko, V. I. [Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, GSP-105 (Russian Federation); Lobachevsky State University, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Ikonnikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, GSP-105 (Russian Federation); Orlita, M. [Laboratoire National des Champs Magnétiques Intenses (LNCMI-G), CNRS, 25 rue des Martyrs, B.P. 166, 38042 Grenoble (France); Sadofyev, Yu. G. [P.N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow 119991, GSP-1, 53 Leninskiy Prospect (Russian Federation); Goiran, M. [Laboratoire National des Champs Magnétiques Intenses (LNCMI-T), CNRS, 143 Avenue de Rangueil, 31400 Toulouse (France); Teppe, F.; Knap, W. [Laboratoire Charles Coulomb (L2C), UMR CNRS 5221, GIS-TERALAB, Universite Montpellier II, 34095 Montpellier (France)

    2015-03-21

    We report observation of electron-electron (e-e) interaction effect on cyclotron resonance (CR) in InAs/AlSb quantum well heterostructures. High mobility values allow us to observe strongly pronounced triple splitting of CR line at noninteger filling factors of Landau levels ν. At magnetic fields, corresponding to ν > 4, experimental values of CR energies are in good agreement with single-electron calculations on the basis of eight-band k ⋅ p Hamiltonian. In the range of filling factors 3 < ν < 4 pronounced, splitting of CR line, exceeding significantly the difference in single-electron CR energies, is discovered. The strength of the splitting increases when occupation of the partially filled Landau level tends to a half, being in qualitative agreement with previous prediction by MacDonald and Kallin [Phys. Rev. B 40, 5795 (1989)]. We demonstrate that such behaviour of CR modes can be quantitatively described if one takes into account both electron correlations and the mixing between conduction and valence bands in the calculations of matrix elements of e-e interaction.

  16. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    International Nuclear Information System (INIS)

    Egorov, A. Yu.; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A.

    2010-01-01

    Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm 2 /(V s) at sheet electron densities of 3.00 x 10 12 and 3.36 x 10 12 cm -2 , respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

  17. Solution-processable ambipolar diketopyrrolopyrrole-selenophene polymer with unprecedentedly high hole and electron mobilities.

    Science.gov (United States)

    Lee, Junghoon; Han, A-Reum; Kim, Jonggi; Kim, Yiho; Oh, Joon Hak; Yang, Changduk

    2012-12-26

    There is a fast-growing demand for polymer-based ambipolar thin-film transistors (TFTs), in which both n-type and p-type transistor operations are realized in a single layer, while maintaining simplicity in processing. Research progress toward this end is essentially fueled by molecular engineering of the conjugated backbones of the polymers and the development of process architectures for device fabrication, which has recently led to hole and electron mobilities of more than 1.0 cm(2) V(-1) s(-1). However, ambipolar polymers with even higher performance are still required. By taking into account both the conjugated backbone and side chains of the polymer component, we have developed a dithienyl-diketopyrrolopyrrole (TDPP) and selenophene containing polymer with hybrid siloxane-solubilizing groups (PTDPPSe-Si). A synergistic combination of rational polymer backbone design, side-chain dynamics, and solution processing affords an enormous boost in ambipolar TFT performance, resulting in unprecedentedly high hole and electron mobilities of 3.97 and 2.20 cm(2) V(-1) s(-1), respectively.

  18. k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

    OpenAIRE

    Lev, L. L.; Maiboroda, I. O.; Husanu, M. -A.; Grichuk, E. S.; Chumakov, N. K.; Ezubchenko, I. S.; Chernykh, I. A.; Wang, X.; Tobler, B.; Schmitt, T.; Zanaveskin, M. L.; Valeyev, V. G.; Strocov, V. N.

    2018-01-01

    Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor (HEMT) heterostructures with an ult...

  19. A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

    Directory of Open Access Journals (Sweden)

    Mohammad Javad Sharifi

    2009-01-01

    Full Text Available A new structure for an exclusive-OR (XOR gate based on the resonant-tunneling high electron mobility transistor (RTHEMT is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

  20. Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials

    KAUST Repository

    Nassar, Joanna M.

    2014-05-01

    For the last four decades, Si CMOS technology has been advancing with Moore’s law prediction, working itself down to the sub-20 nm regime. However, fundamental problems and limitations arise with the down-scaling of transistors and thus new innovations needed to be discovered in order to further improve device performance without compromising power consumption and size. Thus, a lot of studies have focused on the development of new CMOS compatible architectures as well as the discovery of new high mobility channel materials that will allow further miniaturization of CMOS transistors and improvement of device performance. Pushing the limits even further, flexible and foldable electronics seem to be the new attractive topic. By being able to make our devices flexible through a CMOS compatible process, one will be able to integrate hundreds of billions of more transistors in a small volumetric space, allowing to increase the performance and speed of our electronics all together with making things thinner, lighter, smaller and even interactive with the human skin. Thus, in this thesis, we introduce for the first time a cost-effective CMOS compatible approach to make high-k/metal gate devices on flexible Germanium (Ge) and Silicon-Germanium (SiGe) platforms. In the first part, we will look at the various approaches in the literature that has been developed to get flexible platforms, as well as we will give a brief overview about epitaxial growth of Si1-xGex films. We will also examine the electrical properties of the Si1-xGex alloys up to Ge (x=1) and discuss how strain affects the band structure diagram, and thus the mobility of the material. We will also review the material growth properties as well as the state-of-the-art results on high mobility metal-oxide semiconductor capacitors (MOSCAPs) using strained SiGe films. Then, we will introduce the flexible process that we have developed, based on a cost-effective “trench-protect-release-reuse” approach, utilizing

  1. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

    Science.gov (United States)

    Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

    2018-02-01

    A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

  2. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    International Nuclear Information System (INIS)

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

    International Nuclear Information System (INIS)

    Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace; Rajan, Siddharth; Volakis, John L.

    2016-01-01

    A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures

  4. Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

    Science.gov (United States)

    Freeman, Jon C.

    2003-01-01

    Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

  5. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor

    Science.gov (United States)

    Jiang, Chunyan; Liu, Ting; Du, Chunhua; Huang, Xin; Liu, Mengmeng; Zhao, Zhenfu; Li, Linxuan; Pu, Xiong; Zhai, Junyi; Hu, Weiguo; Wang, Zhong Lin

    2017-11-01

    The piezotronic effect utilizes strain-induced piezoelectric polarization charges to tune the carrier transportation across the interface/junction. We fabricated a high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the transport property was proven to be enhanced by applying an external stress for the first time. The enhanced source-drain current was also observed at any gate voltage and the maximum enhancement of the saturation current was up to 21% with 15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical mechanism of HEMT with/without external compressive stress conditions was carefully illustrated and further confirmed by a self-consistent solution of the Schrödinger-Poisson equations. This study proves the cause-and-effect relationship between the piezoelectric polarization effect and 2D electron gas formation, which provides a tunable solution to enhance the device performance. The strain tuned HEMT has potential applications in human-machine interface and the security control of the power system.

  6. Isolated photosystem I reaction centers on a functionalized gated high electron mobility transistor.

    Science.gov (United States)

    Eliza, Sazia A; Lee, Ida; Tulip, Fahmida S; Mostafa, Salwa; Greenbaum, Elias; Ericson, M Nance; Islam, Syed K

    2011-09-01

    In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale (~6 nm) reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs. © 2011 IEEE

  7. Isolated Photosystem I Reaction Centers on a Functionalized Gated High Electron Mobility Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Eliza, Sazia A. [University of Tennessee, Knoxville (UTK); Lee, Ida [ORNL; Tulip, Fahmida S [ORNL; Islam, Syed K [University of Tennessee, Knoxville (UTK); Mostafa, Salwa [University of Tennessee, Knoxville (UTK); Greenbaum, Elias [ORNL; Ericson, Milton Nance [ORNL

    2011-01-01

    In oxygenic plants, photons are captured with high quantum efficiency by two specialized reaction centers (RC) called Photosystem I (PS I) and Photosystem II (PS II). The captured photon triggers rapid charge separation and the photon energy is converted into an electrostatic potential across the nanometer-scale nm reaction centers. The exogenous photovoltages from a single PS I RC have been previously measured using the technique of Kelvin force probe microscopy (KFM). However, biomolecular photovoltaic applications require two-terminal devices. This paper presents for the first time, a micro-device for detection and characterization of isolated PS I RCs. The device is based on an AlGaN/GaN high electron mobility transistor (HEMT) structure. AlGaN/GaN HEMTs show high current throughputs and greater sensitivity to surface charges compared to other field-effect devices. PS I complexes immobilized on the floating gate of AlGaN/GaN HEMTs resulted in significant changes in the device characteristics under illumination. An analytical model has been developed to estimate the RCs of a major orientation on the functionalized gate surface of the HEMTs.

  8. Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

    Science.gov (United States)

    Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

    2018-01-01

    Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

  9. High mobility 2D electron gas in CdTe/CdMgTe heterostructures

    International Nuclear Information System (INIS)

    Karczewski, G.; Jaroszynski, J.; Kurowski, M.; Barcz, A.; Wojtowicz, T.; Kossut, J.

    1997-01-01

    We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd 1-y Mg y Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd 1-y Mg y Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10 5 cm 2 /(Vs). This is the highest mobility reported in wide-gap II-VI materials

  10. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    OpenAIRE

    Chang, P. C.; Lee, K. H.; Wang, Z. H.; Chang, S. J.

    2014-01-01

    We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  11. AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer

    Directory of Open Access Journals (Sweden)

    P. C. Chang

    2014-01-01

    Full Text Available We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a low-temperature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

  12. Characterising thermal resistances and capacitances of GaN high-electron-mobility transistors through dynamic electrothermal measurements

    DEFF Research Database (Denmark)

    Wei, Wei; Mikkelsen, Jan H.; Jensen, Ole Kiel

    2014-01-01

    This study presents a method to characterise thermal resistances and capacitances of GaN high-electron-mobility transistors (HEMTs) through dynamic electrothermal measurements. A measured relation between RF gain and the channel temperature (Tc) is formed and used for indirect measurements...

  13. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

    International Nuclear Information System (INIS)

    Chan, Silvia H; DenBaars, Steven P; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; Mishra, Umesh K

    2016-01-01

    This paper reports high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces. To repair etch-damaged GaN surfaces, various pretreatments were conducted via metalorganic chemical vapor deposition, followed by a regrown AlGaN/GaN mobility test structure to evaluate the extent of recovery. The developed treatment process that was shown to significantly improve the electron mobility consisted of a N 2  + NH 3 pre-anneal plus an insertion of a 4 nm or thicker GaN interlayer prior to deposition of the AlGaN gating layer. Using the optimized process, a high electron mobility transistor (HEMT) device was fabricated which exhibited a high mobility of 1450 cm 2 V −1 s −1 (R sh  = 574 ohm/sq) and low dispersion characteristics. The additional inclusion of an in situ Al 2 O 3 dielectric into the regrowth process for MOS-HEMTs still preserved the transport properties near etch-impacted areas. (paper)

  14. Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Jong-Won, E-mail: jwlim@etri.re.kr [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Park, Hyung-Moo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Division of Electronics and Electrical Engineering, Dongguk University, Seoul (Korea, Republic of)

    2013-11-29

    We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f{sub T}) of 18 GHz, and a maximum oscillation frequency (f{sub max}) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz.

  15. Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

    International Nuclear Information System (INIS)

    Lim, Jong-Won; Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo; Park, Hyung-Moo

    2013-01-01

    We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f T ) of 18 GHz, and a maximum oscillation frequency (f max ) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz

  16. Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high-electron-mobility transistor

    International Nuclear Information System (INIS)

    Quan Si; Hao Yue; Ma Xiao-Hua; Yu Hui-You

    2011-01-01

    AlGaN/GaN depletion-mode high-electron-mobility transistor (D-HEMT) and fluorine (F) plasma treated enhancement-mode high-electron-mobility transistor (E-HEMT) are exposed to 60 Co gamma radiation with a dose of 1.6 Mrad (Si). No degradation is observed in the performance of D-HEMT. However, the maximum transconductance of E-HEMT is increased after radiation. The 2DEG density and the mobility are calculated from the results of capacitance-voltage measurement. The electron mobility decreases after fluorine plasma treatment and recovers after radiation. Conductance measurements in a frequency range from 10 kHz to 1 MHz are used to characterize the trapping effects in the devices. A new type of trap is observed in the F plasma treated E-HEMT compared with the D-HEMT, but the density of the trap decreases by radiation. Fitting of G p /ω data yields the trap densities D T = (1 − 3) × 10 12 cm −2 · eV −1 and D T = (0.2 − 0.8) × 10 12 cm −2 · eV −1 before and after radiation, respectively. The time constant is 0.5 ms-6 ms. With F plasma treatment, the trap is introduced by etch damage and degrades the electronic mobility. After 60 Co gamma radiation, the etch damage decreases and the electron mobility is improved. The gamma radiation can recover the etch damage caused by F plasma treatment. (interdisciplinary physics and related areas of science and technology)

  17. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    Science.gov (United States)

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  18. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

    Science.gov (United States)

    Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

    2017-07-01

    High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

  19. Thermal instability and the growth of the InGaAs/AlGaAs pseudomorphic high electron mobility transistor system

    International Nuclear Information System (INIS)

    Pellegrino, Joseph G.; Qadri, Syed B.; Mahadik, Nadeemullah A.; Rao, Mulpuri V.; Tseng, Wen F.; Thurber, Robert; Gajewski, Donald; Guyer, Jonathan

    2007-01-01

    The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%-3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77 K

  20. Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

    International Nuclear Information System (INIS)

    Liu, Chang; Chor, Eng Fong; Tan, Leng Seow

    2007-01-01

    Improved DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) have been demonstrated using reactive-sputtered hafnium oxide (HfO 2 ) thin film as the surface passivation layer. Hall data indicate a significant increase in the product of sheet carrier concentration (n s ) and electron mobility (μ n ) in the HfO 2 -passivated HEMTs, compared to the unpassivated HEMTs. This improvement in electron carrier characteristics gives rise to a 22% higher I Dmax and an 18% higher g mmax in HEMTs with HfO 2 passivation relative to the unpassivated devices. On the other hand, I gleak of the HEMTs decreases by nearly one order of magnitude when HfO 2 passivation is applied. In addition, drain current is measured in the subthreshold regime. Compared to the unpassivated HEMTs, HfO 2 -passivated HEMTs exhibit a much smaller off-state I D , indicating better turn-off characteristics

  1. Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

    Science.gov (United States)

    Ding, Xiangzhen; Yang, Shuai; Miao, Bin; Gu, Le; Gu, Zhiqi; Zhang, Jian; Wu, Baojun; Wang, Hong; Wu, Dongmin; Li, Jiadong

    2018-04-18

    A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

  2. Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Fan, Ren; Zhi-Biao, Hao; Lei, Wang; Lai, Wang; Hong-Tao, Li; Yi, Luo

    2010-01-01

    SiN x is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiN x films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

    International Nuclear Information System (INIS)

    Chowdhury, Subhra; Biswas, Dhrubes; Chattaraj, Swarnabha

    2015-01-01

    For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current–voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure. (paper)

  4. Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature

    Directory of Open Access Journals (Sweden)

    Zhishuo Huang

    2016-08-01

    Full Text Available Neither of the two typical two-dimensional materials, graphene and single layer MoS 2 , are good enough for developing semiconductor logical devices. We calculated the electron mobility of 14 two-dimensional semiconductors with composition of MX 2 , where M (=Mo, W, Sn, Hf, Zr and Pt are transition metals, and Xs are S, Se and Te. We approximated the electron phonon scattering matrix by deformation potentials, within which long wave longitudinal acoustical and optical phonon scatterings were included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WS 2 , PtS 2 and PtSe 2 are promising for logical devices regarding the possible high electron mobility and finite band gap. Especially, the phonon limited electron mobility in PtSe 2 reaches about 4000 cm 2 ·V - 1 ·s - 1 at room temperature, which is the highest among the compounds with an indirect bandgap of about 1.25 eV under the local density approximation. Our results can be the first guide for experiments to synthesize better two-dimensional materials for future semiconductor devices.

  5. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.

    Science.gov (United States)

    Heo, Cheon; Jang, Jongjin; Lee, Kyngjae; So, Byungchan; Lee, Kyungbae; Ko, Kwangse; Nam, Okhyun

    2017-01-01

    We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm²/V·s and 3.23 × 10¹³ cm⁻², respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.

  6. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

    KAUST Repository

    Lin, Yen-Hung; Faber, Hendrik; Labram, John G.; Stratakis, Emmanuel; Sygellou, Labrini; Kymakis, Emmanuel; Hastas, Nikolaos A.; Li, Ruipeng; Zhao, Kui; Amassian, Aram; Treat, Neil D.; McLachlan, Martyn; Anthopoulos, Thomas D.

    2015-01-01

    High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

  7. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

    KAUST Repository

    Lin, Yen-Hung

    2015-05-26

    High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

  8. High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

    Science.gov (United States)

    Lin, Yen‐Hung; Faber, Hendrik; Labram, John G.; Stratakis, Emmanuel; Sygellou, Labrini; Kymakis, Emmanuel; Hastas, Nikolaos A.; Li, Ruipeng; Zhao, Kui; Amassian, Aram; Treat, Neil D.; McLachlan, Martyn

    2015-01-01

    High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement. PMID:27660741

  9. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    International Nuclear Information System (INIS)

    Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

    2015-01-01

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

  10. Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

    International Nuclear Information System (INIS)

    Gui-Zhou, Hu; Ling, Yang; Li-Yuan, Yang; Si, Quan; Shou-Gao, Jiang; Ji-Gang, Ma; Xiao-Hua, Ma; Yue, Hao

    2010-01-01

    A new multilayer-structured AlN/AlGaN/GaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AlN/AlGaN/GaN HEMT exhibits the maximum drain current density of 800 mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AlN/AlGaN/GaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 GHz and 29.0 GHz, respectively. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao [School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu (China)

    2017-10-15

    In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm{sup 2} V{sup -1} s{sup -1}, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE{sub V}) and conduction band offsets (ΔE{sub C}) were determined as 0.09 and 0.83 eV, respectively. The ΔE{sub C} was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE{sub C}, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

    International Nuclear Information System (INIS)

    Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao

    2017-01-01

    In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm"2 V"-"1 s"-"1, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE_V) and conduction band offsets (ΔE_C) were determined as 0.09 and 0.83 eV, respectively. The ΔE_C was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE_C, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications.

    Science.gov (United States)

    Makowski, M S; Kim, S; Gaillard, M; Janes, D; Manfra, M J; Bryan, I; Sitar, Z; Arellano, C; Xie, J; Collazo, R; Ivanisevic, A

    2013-02-18

    AlGaN/GaN high electron mobility transistors (HEMTs) were used to measure electrical characteristics of physisorbed gold nanoparticles (Au NPs) functionalized with alkanethiols with a terminal methyl, amine, or carboxyl functional group. Additional alkanethiol was physisorbed onto the NP treated devices to distinguish between the effects of the Au NPs and alkanethiols on HEMT operation. Scanning Kelvin probe microscopy and electrical measurements were used to characterize the treatment effects. The HEMTs were operated near threshold voltage due to the greatest sensitivity in this region. The Au NP/HEMT system electrically detected functional group differences on adsorbed NPs which is pertinent to biosensor applications.

  14. Direct Growth of High Mobility and Low-Noise Lateral MoS2 -Graphene Heterostructure Electronics.

    Science.gov (United States)

    Behranginia, Amirhossein; Yasaei, Poya; Majee, Arnab K; Sangwan, Vinod K; Long, Fei; Foss, Cameron J; Foroozan, Tara; Fuladi, Shadi; Hantehzadeh, Mohammad Reza; Shahbazian-Yassar, Reza; Hersam, Mark C; Aksamija, Zlatan; Salehi-Khojin, Amin

    2017-08-01

    Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS 2 -graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS 2 -graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS 2 -metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS 2 -graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates

    Science.gov (United States)

    Wang, Hui; Wang, Ning; Jiang, Ling-Li; Zhao, Hai-Yue; Lin, Xin-Peng; Yu, Hong-Yu

    2017-11-01

    In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron gas, the variation tendency of the threshold voltage (Vth) with the variation of the blocking dielectric thickness depends on the FG charge density. It is found that when the length sum and isolating spacing sum of the FGs both remain unchanged, the Vth shall decrease with the increasing FGs number but maintaining the device as E-mode. It is also reported that for the FGs HEMT, the failure of a FG will lead to the decrease of Vth as well as the increase of drain current, and the failure probability can be improved significantly with the increase of FGs number.

  16. Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Zhang Kai; Cao Meng-Yi; Chen Yong-He; Yang Li-Yuan; Wang Chong; Ma Xiao-Hua; Hao Yue

    2013-01-01

    V-gate GaN high-electron-mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si 3 N 4 recess etching technology. Compared with standard HEMTs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco “ATLAS” for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at the gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  17. O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

    KAUST Repository

    Isakov, Ivan

    2017-04-06

    The growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate\\'s surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.

  18. O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

    KAUST Repository

    Isakov, Ivan; Faber, Hendrik; Grell, Max; Wyatt-Moon, Gwenhivir; Pliatsikas, Nikos; Kehagias, Thomas; Dimitrakopulos, George P.; Patsalas, Panos P.; Li, Ruipeng; Anthopoulos, Thomas D.

    2017-01-01

    The growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.

  19. Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse

    Science.gov (United States)

    Ohi, Shintaro; Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

    2018-02-01

    We report on the correlation between the electroluminescence and current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Standard passivated devices suffering from severe current collapse exhibited high-intensity whitish electroluminescence confined near the drain contact. In contrast, devices with reduced current collapse resulting from oxygen plasma treatment or GaN capping showed low-intensity reddish emission across the entire gate-drain access region. A qualitative explanation of this observed correlation between the current collapse and electroluminescence is presented. Our results demonstrate that electroluminescence analysis is a powerful tool not only for identifying high-field regions but also for assessing the degree of current collapse in AlGaN/GaN HEMTs.

  20. Ultrasensitive detection of Hg2+ using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-01-01

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg 2+ . The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg 2+ and thymines were combined. The current response of this Hg 2+ ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg 2+ ions on the surface by the highly specific thymine-Hg 2+ -thymine recognition. The dynamic linear range for Hg 2+ detection has been determined in the concentrations from 10 −14 to 10 −8 M and a detection limit below 10 −14 M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg 2+ detection till now.

  1. Electronic Discharge Letter Mobile App

    NARCIS (Netherlands)

    Lezcano, Leonardo; Triana, Michel; Ternier, Stefaan; Hartkopf, Kathleen; Stieger, Lina; Schroeder, Hanna; Sopka, Sasa; Drachsler, Hendrik; Maher, Bridget; Henn, Patrick; Orrego, Carola; Specht, Marcus

    2014-01-01

    The electronic discharge letter mobile app takes advantage of Near Field Communication (NFC) within the PATIENT project and a related post-doc study. NFC enabled phones to read passive RFID tags, but can also use this short-range wireless technology to exchange (small) messages. NFC in that sense

  2. Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, J.K., E-mail: janeshkaushik@sspl.drdo.in [Solid State Physics Laboratory, Delhi 110054 (India); Balakrishnan, V.R.; Mongia, D.; Kumar, U.; Dayal, S. [Solid State Physics Laboratory, Delhi 110054 (India); Panwar, B.S. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Muralidharan, R. [Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

    2016-08-01

    This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si{sub 3}N{sub 4} passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si{sub 3}N{sub 4}/AlGaN interface in the un-gated regions provides an additional leakage path between the gate and source/drain and may constitute a large component of reverse current. This surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements. A thin interfacial amorphous semiconductor layer formed due to inter diffusion at Si{sub 3}N{sub 4}/AlGaN interface has been presumed as the source for this surface related leakage. We, therefore, conclude that optimum Si{sub 3}N{sub 4} deposition conditions and careful surface preparation prior to passivation can limit the extent of surface leakage and can thus vastly improve the device performance. - Highlights: • Enhanced leakage in AlGaN/GaN High Electron Mobility Transistors after passivation • Experimental evidence of the presence of extrinsic traps at Si{sub 3}N{sub 4}/AlGaN interface • Electron hopping in shallower extended defects and band tail traps at the interface. • Reduction in current collapse due to the virtual gate inhibition by this conduction • However, limitation on the operating voltages due to decrease in breakdown voltage.

  3. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.

    Science.gov (United States)

    Fontserè, A; Pérez-Tomás, A; Placidi, M; Llobet, J; Baron, N; Chenot, S; Cordier, Y; Moreno, J C; Jennings, M R; Gammon, P M; Fisher, C A; Iglesias, V; Porti, M; Bayerl, A; Lanza, M; Nafría, M

    2012-10-05

    AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50 nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.

  4. Millimeter-wave small-signal modeling with optimizing sensitive-parameters for metamorphic high electron mobility transistors

    International Nuclear Information System (INIS)

    Moon, S-W; Baek, Y-H; Han, M; Rhee, J-K; Kim, S-D; Oh, J-H

    2010-01-01

    In this paper, we present a simple and reliable technique for determining the small-signal equivalent circuit model parameters of the 0.1 µm metamorphic high electron mobility transistors (MHEMTs) in a millimeter-wave frequency range. The initial eight extrinsic parameters of the MHEMT are extracted using two S-parameter (scattering parameter) sets measured under the pinched-off and zero-biased cold field-effect transistor conditions by avoiding the forward gate biasing. Furthermore, highly calibration-sensitive values of the R s , L s and C pd are optimized by using a gradient optimization method to improve the modeling accuracy. The accuracy enhancement of this procedure is successfully verified with an excellent correlation between the measured and calculated S-parameters up to 65 GHz

  5. Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Asubar, Joel T., E-mail: joel@rciqe.hokudai.ac.jp; Yatabe, Zenji; Hashizume, Tamotsu [Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo (Japan); Japan Science and Technology Agency (JST), CREST, 102-0075 Tokyo (Japan)

    2014-08-04

    Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel (MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with the conventional planar device, the MMC HEMT exhibits much less negative slope of the I{sub D}-V{sub DS} curves at high V{sub DS} regime, indicating less self-heating. Using a method proposed by Menozzi and co-workers, we obtained a thermal resistance of 4.8 K-mm/W at ambient temperature of ∼350 K and power dissipation of ∼9 W/mm. This value compares well to 4.1 K-mm/W, which is the thermal resistance of AlGaN/GaN HEMTs on expensive single crystal diamond substrates and the lowest reported value in literature.

  6. A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Yang Liyuan; Ai Shan; Chen Yonghe; Cao Mengyi; Zhang Kai; Ma Xiaohua; Hao Yue

    2013-01-01

    Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors (HEMTs) is investigated by measurements and modeling of device junction temperature under steady-state operation. Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribution of the device. The device peak temperature corresponds to the high field region at the drain side of gate edge. The channel temperature of the device is modeled using a combined electro-thermal model considering 2DEG transport characteristics and the Joule heating power distribution. The results reveal excellent correlation to the micro-Raman measurements, validating our model for the design of better cooled structures. Furthermore, the influence of layout design on the channel temperature of multi-finger AlGaN/GaN HEMTs is studied using the proposed electro-thermal model, allowing for device optimization. (semiconductor devices)

  7. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

    Science.gov (United States)

    Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

    2016-11-24

    Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

  8. Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors

    Science.gov (United States)

    2015-09-01

    ABBREVIATIONS 2DEG two-dimensional electron gas AlGaN aluminum gallium nitride AlOx aluminum oxide CCD charged coupled device CTE coefficient of...frequency of FETs. Such a device may also be known as a heterojunction field-effect transistor (HFET), modulation-doped field-effect transistor (MODFET...electrons. This charge attracts electrons to the interface, forming the 2DEG channel. The HEMT includes a heterojunction of two semiconducting

  9. Quantum corrections to conductivity observed at intermediate magnetic fields in a high mobility GaAs/AlGaAs 2-dimensional electron gas

    International Nuclear Information System (INIS)

    Taboryski, R.; Veje, E.; Lindelof, P.E.

    1990-01-01

    Magnetoresistance with the field perpendicular to the 2-dimensional electron gas in a high mobility GaAs/AlGaAs heterostructure at low temperatures is studied. At the lowest magnetic field we observe the weak localization. At magnetic fields, where the product of the mobility and the magnetic field is of the order of unity, the quantum correction to conductivity due to the electron-electron interaction is as a source of magnetoresistance. A consistent analysis of experiments in this regime is for the first time performed. In addition to the well known electron-electron term with the expected temperature dependence, we find a new type of temperature independent quantum correction, which varies logarithmically with mobility. (orig.)

  10. Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

    Science.gov (United States)

    Cheng, Zhi-Qun; Hu, Sha; Liu, Jun; Zhang, Qi-Jun

    2011-03-01

    In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model. Project supported by the National Natural Science Foundation of China (Grant No. 60776052).

  11. Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series

    KAUST Repository

    Elkhatib, Tamer A.; Kachorovskiǐ, Valentin Yu; Stillman, William J.; Veksler, Dmitry B.; Salama, Khaled N.; Zhang, Xicheng; Shur, Michael S.

    2010-01-01

    We report on enhanced room-temperature detection of terahertz radiation by several connected field-effect transistors. For this enhanced nonresonant detection, we have designed, fabricated, and tested plasmonic structures consisting of multiple InGaAs/GaAs pseudomorphic high electron-mobility transistors connected in series. Results show a 1.63-THz response that is directly proportional to the number of detecting transistors biased by a direct drain current at the same gate-to-source bias voltages. The responsivity in the saturation regime was found to be 170 V/W with the noise equivalent power in the range of 10-7 W/Hz0.5. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by terahertz radiation in the transistor channel. © 2010 IEEE.

  12. Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

    International Nuclear Information System (INIS)

    Xi Xiao-Wen; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Fan Qing-Yang; Shi Chun-Lei

    2016-01-01

    An electromagnetic pulse (EMP)-induced damage model based on the internal damage mechanism of the GaAs pseudomorphic high electron mobility transistor (PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level. (paper)

  13. Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

    International Nuclear Information System (INIS)

    Vasallo, B G; González, T; Mateos, J; Rodilla, H; Moschetti, G; Grahn, J

    2012-01-01

    The kink effect can spoil the otherwise excellent low noise performance of InAs/AlSb high electron mobility transistors. It has its origin in the pile-up of holes (generated by impact ionization) taking place mainly at the drain side of the buffer, which leads to a reduction of the gate-induced channel depletion and results in a drain current enhancement. Our results indicate that the generation of holes by impact ionization and their further recombination lead to fluctuations in the charge of the hole pile-up, which provoke an important increase in the drain current noise, even when the kink effect is hardly perceptible in the output characteristics. (paper)

  14. Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors

    Science.gov (United States)

    Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

    2018-05-01

    We investigated the impact of rounded electrode corners on the breakdown characteristics of AlGaN/GaN high-electron mobility transistors. For standard reference devices, catastrophic breakdown occurred predominantly near the sharp electrode corners. By introducing a rounded-electrode architecture, premature breakdown at the corners was mitigated. Moreover, the rate of breakdown voltage (V BR) degradation with an increasing gate width (W G) was significantly lower for devices with rounded corners. When W G was increased from 100 µm to 10 mm, the V BR of the reference device dropped drastically, from 1,200 to 300 V, whereas that of the rounded-electrode device only decreased to a respectable value of 730 V.

  15. Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series

    KAUST Repository

    Elkhatib, Tamer A.

    2010-02-01

    We report on enhanced room-temperature detection of terahertz radiation by several connected field-effect transistors. For this enhanced nonresonant detection, we have designed, fabricated, and tested plasmonic structures consisting of multiple InGaAs/GaAs pseudomorphic high electron-mobility transistors connected in series. Results show a 1.63-THz response that is directly proportional to the number of detecting transistors biased by a direct drain current at the same gate-to-source bias voltages. The responsivity in the saturation regime was found to be 170 V/W with the noise equivalent power in the range of 10-7 W/Hz0.5. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by terahertz radiation in the transistor channel. © 2010 IEEE.

  16. Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network

    International Nuclear Information System (INIS)

    Cheng Zhi-Qun; Hu Sha; Liu Jun; Zhang Qi-Jun

    2011-01-01

    In this paper we present a novel approach to modeling AlGaN/GaN high electron mobility transistor (HEMT) with an artificial neural network (ANN). The AlGaN/GaN HEMT device structure and its fabrication process are described. The circuit-based Neuro-space mapping (neuro-SM) technique is studied in detail. The EEHEMT model is implemented according to the measurement results of the designed device, which serves as a coarse model. An ANN is proposed to model AlGaN/GaN HEMT based on the coarse model. Its optimization is performed. The simulation results from the model are compared with the measurement results. It is shown that the simulation results obtained from the ANN model of AlGaN/GaN HEMT are more accurate than those obtained from the EEHEMT model. (condensed matter: structural, mechanical, and thermal properties)

  17. A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor

    International Nuclear Information System (INIS)

    Cui Lei; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Wang Cui-Mei; Jiang Li-Juan; Feng Chun; Yin Hai-Bo; Gong Jia-Min; Li Bai-Quan; Wang Zhan-Guo

    2015-01-01

    A novel multi-finger gate high electron mobility transistor (HEMT) is designed to reduce the peak electric field value at the drain-side gate edge when the device is at off-state. The effective gate length (L_e_f_f) of the multi-finger gate device is smaller than that of the field plate gate device. In this work, field plate gate, five-finger gate and ten-finger gate devices are simulated. The results of the simulation indicate that the multi-finger gate device has a lower peak value than the device with the gate field plate. Moreover, this value would be further reduced when the number of gate fingers is increased. In addition, it has the potential to make the HEMT work in a higher frequency since it has a lower effective length of gate. (paper)

  18. A Static and Dynamic Investigation of Quantum Nonlinear Transport in Highly Dense and Mobile 2D Electron Systems

    Science.gov (United States)

    Dietrich, Scott

    Heterostructures made of semiconductor materials may be one of most versatile environments for the study of the physics of electron transport in two dimensions. These systems are highly customizable and demonstrate a wide range of interesting physical phenomena. In response to both microwave radiation and DC excitations, strongly nonlinear transport that gives rise to non-equilibrium electron states has been reported and investigated. We have studied GaAs quantum wells with a high density of high mobility two-dimensional electrons placed in a quantizing magnetic field. This study presents the observation of several nonlinear transport mechanisms produced by the quantum nature of these materials. The quantum scattering rate, 1tau/q, is an important parameter in these systems, defining the width of the quantized energy levels. Traditional methods of extracting 1tau/q involve studying the amplitude of Shubnikov-de Haas oscillations. We analyze the quantum positive magnetoresistance due to the cyclotron motion of electrons in a magnetic field. This method gives 1tau/q and has the additional benefit of providing access to the strength of electron-electron interactions, which is not possible by conventional techniques. The temperature dependence of the quantum scattering rate is found to be proportional to the square of the temperature and is in very good agreement with theory that considers electron-electron interactions in 2D systems. In quantum wells with a small scattering rate - which corresponds to well-defined Landau levels - quantum oscillations of nonlinear resistance that are independent of magnetic field strength have been observed. These oscillations are periodic in applied bias current and are connected to quantum oscillations of resistance at zero bias: either Shubnikov-de Haas oscillations for single subband systems or magnetointersubband oscillations for two subband systems. The bias-induced oscillations can be explained by a spatial variation of electron

  19. Characterization of a high performance ultra-thin heat pipe cooling module for mobile hand held electronic devices

    Science.gov (United States)

    Ahamed, Mohammad Shahed; Saito, Yuji; Mashiko, Koichi; Mochizuki, Masataka

    2017-11-01

    In recent years, heat pipes have been widely used in various hand held mobile electronic devices such as smart phones, tablet PCs, digital cameras. With the development of technology these devices have different user friendly features and applications; which require very high clock speeds of the processor. In general, a high clock speed generates a lot of heat, which needs to be spreaded or removed to eliminate the hot spot on the processor surface. However, it is a challenging task to achieve proper cooling of such electronic devices mentioned above because of their confined spaces and concentrated heat sources. Regarding this challenge, we introduced an ultra-thin heat pipe; this heat pipe consists of a special fiber wick structure named as "Center Fiber Wick" which can provide sufficient vapor space on the both sides of the wick structure. We also developed a cooling module that uses this kind of ultra-thin heat pipe to eliminate the hot spot issue. This cooling module consists of an ultra-thin heat pipe and a metal plate. By changing the width, the flattened thickness and the effective length of the ultra-thin heat pipe, several experiments have been conducted to characterize the thermal properties of the developed cooling module. In addition, other experiments were also conducted to determine the effects of changes in the number of heat pipes in a single module. Characterization and comparison of the module have also been conducted both experimentally and theoretically.

  20. Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

    International Nuclear Information System (INIS)

    Zervos, Ch; Adikimenakis, A; Bairamis, A; Kostopoulos, A; Kayambaki, M; Tsagaraki, K; Konstantinidis, G; Georgakilas, A

    2016-01-01

    The current instabilities of high electron mobility transistors (HEMTs), based on thin double AlN/GaN/AlN heterostructures (∼0.5 μm total thickness), directly grown on sapphire substrates, have been analyzed and compared for different AlN top barrier thicknesses. The structures were capped by 1 nm GaN and non-passivated 1 μm gate-length devices were processed. Pulsed I–V measurements resulted in a maximum cold pulsed saturation current of 1.4 A mm −1 at a gate-source voltage of +3 V for 3.7 nm AlN thickness. The measured gate and drain lag for 500 ns pulse-width varied between 6%–12% and 10%–18%, respectively. Furthermore, a small increase in the threshold voltage was observed for all the devices, possibly due to the trapping of electrons under the gate contact. The off-state breakdown voltage of V br  = 70 V, for gate-drain spacing of 2 μm, was approximately double the value measured for a single AlN/GaN HEMT structure grown on a thick GaN buffer layer. The results suggest that the double AlN/GaN/AlN heterostructures may offer intrinsic advantages for the breakdown and current stability characteristics of high current HEMTs. (paper)

  1. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183 (Sweden); Bergsten, J.; Rorsman, N. [Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296 (Sweden)

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  2. Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Bovet, N.; Kasama, Takeshi

    2014-01-01

    Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V−1 s−1 are achieved at this no...

  3. Cyclotron resonance spectroscopy of a high-mobility two-dimensional electron gas from 0.4 to 100 K at high filling factors

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, Jeremy A. [Univ. of Alabama, Birmingham, AL (United States); Tokumoto, Takahisa [Univ. of Alabama, Birmingham, AL (United States); Cherian, Judy G. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Kuno, J. [Rice Univ., Houston, TX (United States); Reno, John L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); McGill, Stephen A. [Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Karaiskaj, Denis [Univ. of South Florida, Tampa, FL (United States); Hilton, David J. [Univ. of Alabama, Birmingham, AL (United States)

    2015-10-01

    We have studied the cyclotron mobility of a Landau-quantized two-dimensional electron gas as a function of temperature (0.4 --100 K) at a fixed magnetic field (1.25 T) using terahertz time-domain spectroscopy in a sample with a low frequency mobility of μdc = 3.6 x 106 cm2 V-1 s-1 and a carrier concentration of ns = 2 x 106 cm-2. The low temperature mobility in this sample results from both impurity scattering and acoustic deformation potential scattering, with μ$-1\\atop{CR}$ ≈ (2.1 x 105 cm2 V-1 s-1)-1 + (3.8 x 10-8 V sK-1 cm-2 x T)-1 at low temperatures. Above 50 K, the cyclotron oscillations show a strong reduction in both the oscillation amplitude and lifetime that is dominated by the contribution due to polar optical phonons. These results suggest that electron dephasing times as long as ~ 300 ps are possible even at this high lling factor (v = 6:6) in higher mobility samples (> 107 cm2 V-1 s-1) that have lower impurity concentrations and where the cyclotron mobility at this carrier concentration would be limited by acoustic deformation potential scattering.

  4. An Investigation of Carbon-Doping-Induced Current Collapse in GaN-on-Si High Electron Mobility Transistors

    Directory of Open Access Journals (Sweden)

    An-Jye Tzou

    2016-06-01

    Full Text Available This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT with a 1702 V breakdown voltage (BV and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulting in a low carbon-doping concentration. The high-bandgap AlGaN provided an effective barrier for blocking leakage from the channel to substrate, leading to a BV comparable to the ordinary carbon-doped GaN HEMTs. In addition, the AlGaN back barrier showed a low dispersion of transiently pulsed ID under substrate bias, implying that the buffer traps were effectively suppressed. Therefore, we obtained a low-dynamic on-resistance with this AlGaN back barrier. These two approaches of high BV with low current collapse improved the device performance, yielding a device that is reliable in power device applications.

  5. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    Science.gov (United States)

    Grady, R.; Bayram, C.

    2017-07-01

    In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga(1-X)N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga(1-X)N/GaN heterojunction is formed through intentional δ-doping part of the Al X Ga(1-X)N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga(1-X)N barrier; δ-doping location (within the Al X Ga(1-X)N barrier), δ-doped Al X Ga(1-X)N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga(1-X)N barrier results in a normally-off behavior whereas Al X Ga(1-X)N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology.

  6. Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Yang Ling; Zhou Xiao-Wei; Ma Xiao-Hua; Lv Ling; Zhang Jin-Cheng; Hao Yue; Cao Yan-Rong

    2017-01-01

    The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor (HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties. (paper)

  7. Growth optimization and characterization of high mobility two-dimensional electron systems in AlAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Dasgupta, Shivaji

    2009-02-15

    In this work two-dimensional electron systems (2DESs) based on AlAs/AlGaAs heterostructures doped with Si are investigated. The electrons are confined in AlAs quantum wells (QWs) sandwiched between AlGaAs buffers. Analytical calculations and simulations for AlAs QWs are presented in the first chapter. The results show a cross-over width, above which the wide (001)-oriented QWs show double valley occupancy and wide (110)-oriented QWs show single valley occupancy. We solve the Schroedinger equation analytically for anisotropic masses. The solution shows the orientation dependence of the elliptical cyclotron orbit due to the anisotropic mass. We also present an introduction to the Landau level crossings based on g{sup *}m{sup *} product. In the next chapter, we present experimental results for the double-valley (001)-oriented AlAs QWs. We present the different structures of the deep AlAs QWs along with the low temperature magnetotransport data for these QWs. Thereafter, we present the results on shallow AlAs QWs. We achieved a mobility of 4.2 x 10{sup 5} cm{sup 2}/Vs at 330 mK for the deep backside doped AlAs QW. For the shallow QWs, we achieved a mobility of2.3 x 10{sup 5} cm{sup 2}/Vs at 330 mK, for a density of 2.9 x 10{sup 11} cm{sup -2}. From the magneto-transport data, we see evidence of the double-valley occupation for the (001)-oriented AlAs wide QWs. In the next chapter, we present experimental results for the single-valley (110)-oriented AlAs QWs. We deduced the donor binding energy and the doping efficiency for this facet from a doping series of double-sided doped QWs. Thereafter, we designed different structures for the (110)-oriented AlAs QWs, which we present along with their respective low temperature magneto-transport data. We measured one of the double-sided doped AlAs QWs at very high magnetic fields and low temperatures, down to 60 mK. At the end of the chapter, we present a spike feature observed in the magneto-transport data of these QWs. This

  8. Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

    Science.gov (United States)

    Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

    2016-12-01

    InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

  9. Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

    Science.gov (United States)

    Xiao-Wen, Xi; Chang-Chun, Chai; Gang, Zhao; Yin-Tang, Yang; Xin-Hai, Yu; Yang, Liu

    2016-04-01

    The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

  10. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    Science.gov (United States)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  11. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Naresh-Kumar, G., E-mail: naresh.gunasekar@strath.ac.uk; Trager-Cowan, C. [Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Vilalta-Clemente, A.; Morales, M.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex (France); Pandey, S.; Cavallini, A.; Cavalcoli, D. [Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna (Italy); Skuridina, D.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technical University Berlin, 10623 Berlin (Germany); Behmenburg, H.; Giesen, C.; Heuken, M. [AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Gamarra, P.; Di Forte-Poisson, M. A. [Thales Research and Technology, III-V Lab, 91460 Marcoussis (France); Patriarche, G. [LPN, Route de Nozay, 91460 Marcoussis (France); Vickridge, I. [Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris (France)

    2014-12-15

    We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al{sub 2}O{sub 3} high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  12. Multicharacterization approach for studying InAl(GaN/Al(GaN/GaN heterostructures for high electron mobility transistors

    Directory of Open Access Journals (Sweden)

    G. Naresh-Kumar

    2014-12-01

    Full Text Available We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(GaN(33nm barrier/Al(GaN(1nm interlayer/GaN(3μm/ AlN(100nm/Al2O3 high electron mobility transistor (HEMT heterostructure grown by metal organic vapor phase epitaxy (MOVPE. In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(GaN interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance.

  13. Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor

    Science.gov (United States)

    Cleary, Justin W.; Peale, Robert E.; Saxena, Himanshu; Buchwald, Walter R.

    2011-05-01

    The observation of THz regime transmission resonances in an InGaAs/InP high electron mobility transistor (HEMT) can be attributed to excitation of plasmons in its two-dimensional electron gas (2DEG). Properties of grating-based, gate-voltage tunable resonances are shown to be adequately modeled using commercial finite element method (FEM) software when the HEMT layer structure, gate geometry and sheet charge concentration are taken into account. The FEM results are shown to produce results consistent with standard analytical theories in the 10-100 cm-1 wavenumber range. An original analytic formula presented here describes how the plasmonic resonance may change in the presence of a virtual gate, or region of relatively high free charge carriers that lies in the HEMT between the physical grating gate and the 2DEG. The virtual gate and corresponding analytic formulation are able to account for the red-shifting experimentally observed in plasmonic resonances. The calculation methods demonstrated here have the potential to greatly aid in the design of future detection devices that require specifically tuned plasmonic modes in the 2DEG of a HEMT, as well as giving new insights to aid in the development of more complete analytic theories.

  14. Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

    International Nuclear Information System (INIS)

    Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo

    2013-01-01

    The two-dimensional electron gas (2DEG) mobility limited by dielectric and barrier thickness fluctuations (TF) scattering in Al 2 O 3 /AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs) is calculated. Calculation shows that thickness fluctuation scattering is the main limitation in Al 2 O 3 /AlGaN/GaN double heterojunction HEMTs with thin Al 2 O 3 layer thicknesses. In addition, a study of 2DEG mobility as a function of 2DEG density, n s , shows that TF scattering acts as the main limitation when n s exceeds 2 × 10 12 cm −2 . The results may be used to design HEMTs to obtain higher 2DEG mobilities by modulating the dielectric layer and barrier thicknesses or 2DEG density. - Highlights: • The mobility limited by thickness fluctuation (TF) scattering is studied. • Results show that thickness fluctuation scattering is the main limitation. • Two-dimensional electron gas (2DEG) mobility is a function of 2DEG density. • TF scattering is the main limitation when 2DEG density exceeds 2 × 10 12 cm −2

  15. High Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

    DEFF Research Database (Denmark)

    Chen, Zhuoying; Lee, Mi Jung; Ashraf, Raja Shahid

    2012-01-01

    Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance...

  16. Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

    DEFF Research Database (Denmark)

    Niu, Wei; Gan, Yulin; Christensen, Dennis Valbjørn

    2017-01-01

    The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel γ-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1015 cm-2. Herein, we report on the patterning...... is found to be approximately 3×1013 cm-2, much lower than that of the unpatterned sample (~1015 cm-2). Remarkably, a high electron mobility of approximately 3,600 cm2V-1s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of ~ 7×1012 cm-2, which exhibits clear Shubnikov-de Hass...... quantum oscillations. The patterned high-mobility 2DEG at the γ-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devic...

  17. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs)

    National Research Council Canada - National Science Library

    Fitch, R

    2002-01-01

    Three different passivation layers (SiN(x), MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs...

  18. WordEdge® A Career Mobility Guide to High Speed Dictionary-Based Electronic Learning and Testing

    Directory of Open Access Journals (Sweden)

    Robert Oliphant

    2009-01-01

    Full Text Available As Thomas Kuhn taught us, misery loves innovation even more than company. Small wonder our recession worriers — and who isn’t one these days, directly or indirectly? — are desperately looking for new and practical ways to increase their job mobility. Statistically considered, since most unskilled jobs are already filled, jobseekers from shrinking fields of employment are being advised to broaden their search to include entry level jobs in new high tech fields that are either stable or expanding, e.g., health care.Let’s grant that each high tech field has its own hands-on skills. But it’s also true that each field, e.g., plumbing, has its own high tech vocabulary which each candidate for employment is expected to know or learn, including correct pronunciation, very much like an aspiring restaurant server learning the complete menu by heart. Hence the desirability of acquiring preliminary mastery of an employment field’s high tech vocabulary well in ADVANCE of the first interview, not in a panicky last minute cram session. Until recently, the only way we could acquire a preliminary mastery of, say, health care terms was to take a course (inconvenient and expensive or to study a specific-field booklet (usually limited inscope. Today, however, our current partnership between print dictionaries and their electronic versions gives any job candidate quick access to an amazingly efficient learning tool for masteringa wide range of high tech vocabularies in current use. Here’s the why and how of our dictionary-based learning and testing route.

  19. Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

    Science.gov (United States)

    Bae, Jong-Ho; Lee, Jong-Ho

    2016-05-01

    A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

  20. An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

    Science.gov (United States)

    Li, Kexin; Rakheja, Shaloo

    2018-05-01

    We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.

  1. Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Gago, R.; Romero, M.F.; Gonzalez-Posada, F.; Brana, A.F.; Munoz, E.; Jimenez, A.

    2008-01-01

    In this work, hydrogenated silicon nitride (SiN x :H y ) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and X-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH 4 /N 2 and SiH 4 /NH 3 ) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Detection of prostate-specific antigen with biomolecule-gated AlGaN/GaN high electron mobility transistors

    Science.gov (United States)

    Li, Jia-dong; Cheng, Jun-jie; Miao, Bin; Wei, Xiao-wei; Xie, Jie; Zhang, Jin-cheng; Zhang, Zhi-qiang; Wu, Dong-min

    2014-07-01

    In order to improve the sensitivity of AlGaN/GaN high electron mobility transistor (HEMT) biosensors, a simple biomolecule-gated AlGaN/GaN HEMT structure was designed and successfully fabricated for prostate specific antigen (PSA) detection. UV/ozone was used to oxidize the GaN surface and then a 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer was bound to the sensing region. This monolayer serves as a binding layer for attachment of the prostate specific antibody (anti-PSA). The biomolecule-gated AlGaN/GaN HEMT sensor shows a rapid and sensitive response when the target prostate-specific antigen in buffer solution was added to the antibody-immobilized sensing area. The current change showed a logarithm relationship against the PSA concentration from 0.1 pg/ml to 0.993 ng/ml. The sensitivity of 0.215% is determined for 0.1 pg/ml PSA solution. The above experimental result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for prostate cancer screening.

  3. Detection of prostate-specific antigen with biomolecule-gated AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Li, Jia-dong; Miao, Bin; Wei, Xiao-wei; Xie, Jie; Wu, Dong-min; Cheng, Jun-jie; Zhang, Jin-cheng; Zhang, Zhi-qiang

    2014-01-01

    In order to improve the sensitivity of AlGaN/GaN high electron mobility transistor (HEMT) biosensors, a simple biomolecule-gated AlGaN/GaN HEMT structure was designed and successfully fabricated for prostate specific antigen (PSA) detection. UV/ozone was used to oxidize the GaN surface and then a 3-aminopropyl trimethoxysilane (APTES) self-assembled monolayer was bound to the sensing region. This monolayer serves as a binding layer for attachment of the prostate specific antibody (anti-PSA). The biomolecule-gated AlGaN/GaN HEMT sensor shows a rapid and sensitive response when the target prostate-specific antigen in buffer solution was added to the antibody-immobilized sensing area. The current change showed a logarithm relationship against the PSA concentration from 0.1 pg/ml to 0.993 ng/ml. The sensitivity of 0.215% is determined for 0.1 pg/ml PSA solution. The above experimental result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for prostate cancer screening. (paper)

  4. Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

    International Nuclear Information System (INIS)

    Fang, J. Y.; Hsu, C. P.; Kang, Y. W.; Fang, K. C.; Kao, W. L.; Yao, D. J.; Chen, C. C.; Li, S. S.; Yeh, J. A.; Wang, Y. L.; Lee, G. Y.; Chyi, J. I.; Hsu, C. H.; Huang, Y. F.; Ren, F.

    2013-01-01

    The drain current fluctuation of ungated AlGaN/GaN high electron mobility transistors (HEMTs) measured in different fluids at a drain-source voltage of 0.5 V was investigated. The HEMTs with metal on the gate region showed good current stability in deionized water, while a large fluctuation in drain current was observed for HEMTs without gate metal. The fluctuation in drain current for the HEMTs without gate metal was observed and calculated as standard deviation from a real-time measurement in air, deionized water, ethanol, dimethyl sulfoxide, ethylene glycol, 1,2-butanediol, and glycerol. At room temperature, the fluctuation in drain current for the HEMTs without gate metal was found to be relevant to the dipole moment and the viscosity of the liquids. A liquid with a larger viscosity showed a smaller fluctuation in drain current. The viscosity-dependent fluctuation of the drain current was ascribed to the Brownian motions of the liquid molecules, which induced a variation in the surface dipole of the gate region. This study uncovers the causes of the fluctuation in drain current of HEMTs in fluids. The results show that the AlGaN/GaN HEMTs may be used as sensors to measure the viscosity of liquids within a certain range of viscosity

  5. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    International Nuclear Information System (INIS)

    Luo Jun; Zhao Sheng-Lei; Mi Min-Han; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei; Hou Bin

    2016-01-01

    The effects of gate length L G on breakdown voltage V BR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with L G = 1 μm∼ 20 μm. With the increase of L G , V BR is first increased, and then saturated at L G = 3 μm. For the HEMT with L G = 1 μm, breakdown voltage V BR is 117 V, and it can be enhanced to 148 V for the HEMT with L G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with L G > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with L G = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. (paper)

  6. Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

    International Nuclear Information System (INIS)

    Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

    2013-01-01

    Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

  7. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    International Nuclear Information System (INIS)

    Grady, R; Bayram, C

    2017-01-01

    In this work we investigate design parameters enabling normally-off operation of zincblende (ZB-) phase Al X Ga (1−X) N/GaN high electron mobility transistors (HEMTs) via Synopsys Sentaurus Technology Computer Aided Design (TCAD). As ZB-phase III-nitrides are polarization-free, the 2D electron gas (2DEG) channel at the Al X Ga (1−X) N/GaN heterojunction is formed through intentional δ -doping part of the Al X Ga (1−X) N barrier layer. The impact of each of the design parameters (i.e. Al-content and thickness of Al X Ga (1−X) N barrier; δ -doping location (within the Al X Ga (1−X) N barrier), δ-doped Al X Ga (1−X) N layer thickness and its doping amount; gate metal) are studied in detail and design trade-offs are reported. We show that work function of the gate metal impacts normally-off behavior and turn-on voltage considerably. Our results suggest that Al-content of 35% or less in the Al X Ga (1−X) N barrier results in a normally-off behavior whereas Al X Ga (1−X) N barrier thickness is effective in controlling the turn-on voltage. Overall, we provide design guidelines in controlling the normally-on/-off operation, threshold voltage, and 2DEG density in ZB-phase AlGaN/GaN HEMT technology. (paper)

  8. Origin of fine oscillations in the photoluminescence spectrum of 2-dimensional electron gas formed in AlGaN/GaN high electron mobility transistor structures

    Energy Technology Data Exchange (ETDEWEB)

    Jana, Dipankar, E-mail: dip2602@gmail.com; Porwal, S.; Oak, S. M.; Sharma, T. K., E-mail: tarun@rrcat.gov.in [Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013, Madhya Pradesh (India); Jain, Anubha [Solid State Physics Laboratory, Lucknow Road, New Delhi 110054 (India)

    2015-10-28

    An unambiguous identification of the fine oscillations observed in the low temperature photoluminescence (PL) spectra of AlGaN/GaN based high electron mobility transistor (HEMT) structures is carried out. In literature, such oscillations have been erroneously identified as the sub-levels of 2-dimensional electron gas (2DEG) formed at AlGaN/GaN heterointerface. Here, the origin of these oscillations is probed by performing the angle dependent PL and reflectivity measurements under identical conditions. Contrary to the reports available in literature, we find that the fine oscillations are not related to 2DEG sub-levels. The optical characteristics of these oscillations are mainly governed by an interference phenomenon. In particular, peculiar temperature dependent redshift and excitation intensity dependent blueshift, which have been interpreted as the characteristics of 2DEG sub-levels in HEMT structures by other researchers, are understood by invoking the wavelength and temperature dependence of the refractive index of GaN within the framework of interference phenomenon. The results of other researchers are also consistently explained by considering the fine oscillatory features as the interference oscillations.

  9. High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wen-Ping, Gu; Huan-Tao, Duan; Jin-Yu, Ni; Yue, Hao; Jin-Cheng, Zhang; Qian, Feng; Xiao-Hua, Ma

    2009-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated by employing SiN passivation, this paper investigates the degradation due to the high-electric-field stress. After the stress, a recoverable degradation has been found, consisting of the decrease of saturation drain current I Dsat , maximal transconductance g m , and the positive shift of threshold voltage V TH at high drain-source voltage V DS . The high-electric-field stress degrades the electric characteristics of AlGaN/GaN HEMTs because the high field increases the electron trapping at the surface and in AlGaN barrier layer. The SiN passivation of AlGaN/GaN HEMTs decreases the surface trapping and 2DEG depletion a little during the high-electric-field stress. After the hot carrier stress with V DS = 20 V and V GS = 0 V applied to the device for 10 4 sec, the SiN passivation decreases the stress-induced degradation of I Dsat from 36% to 30%. Both on-state and pulse-state stresses produce comparative decrease of I Dsat , which shows that although the passivation is effective in suppressing electron trapping in surface states, it does not protect the device from high-electric-field degradation in nature. So passivation in conjunction with other technological solutions like cap layer, prepassivation surface treatments, or field-plate gate to weaken high-electric-field degradation should be adopted. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Zhang Xiao-Yu; Sun Jian-Dong; Li Xin-Xing; Zhou Yu; Lü Li; Qin Hua; Tan Ren-Bing

    2015-01-01

    An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V g , the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector. (paper)

  11. Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer.

    Science.gov (United States)

    Jia, Xiuling; Chen, Dunjun; Bin, Liu; Lu, Hai; Zhang, Rong; Zheng, Youdou

    2016-06-09

    A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The current response showed that the fabricated sensor is highly sensitive and selective to phosphate anions. The current change exhibited approximate linear dependence for phosphate concentration from 0.02 mg L(-1) to 2 mg L(-1), the sensitivity and detection limit of the sensor is 3.191 μA/mg L(-1) and 1.97 μg L(-1), respectively. The results indicated that this AlGaN/GaN HEMT-based electrochemical sensor has the potential applications on phosphate anion detection.

  12. Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

    Directory of Open Access Journals (Sweden)

    W. A. Sasangka

    2016-09-01

    Full Text Available Dislocations are known to be associated with both physical and electrical degradation mechanisms of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs. We have observed threading dislocation movement toward the gate-edges in AlGaN/GaN-on-Si HEMT under high reverse bias stressing. Stressed devices have higher threading dislocation densities (i.e. ∼5 × 109/cm2 at the gate-edges, as compared to unstressed devices (i.e. ∼2.5 × 109/cm2. Dislocation movement correlates well with high tensile stress (∼1.6 GPa at the gate-edges, as seen from inverse piezoelectric calculations and x-ray synchrotron diffraction residual stress measurements. Based on Peierls stress calculation, we believe that threading dislocations move via glide in 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 00 } and 〈 11 2 ¯ 0 〉 / { 1 1 ¯ 01 } slip systems. This result illustrates the importance of threading dislocation mobility in controlling the reliability of AlGaN/GaN-on-Si HEMTs.

  13. Optimization of a Differential Ion Mobility Spectrometry-Tandem Mass Spectrometry Method for High-Throughput Analysis of Nicotine and Related Compounds: Application to Electronic Cigarette Refill Liquids.

    Science.gov (United States)

    Regueiro, Jorge; Giri, Anupam; Wenzl, Thomas

    2016-06-21

    Fast market penetration of electronic cigarettes is leading to an exponentially growing number of electronic refill liquids with different nicotine contents and an endless list of flavors. Therefore, rapid and simple methods allowing a fast screening of these products are necessary to detect harmful substances which can negatively impact the health of consumers. In this regard, the present work explores the capabilities of differential ion mobility spectrometry coupled to tandem mass spectrometry for high-throughput analysis of nicotine and 11 related compounds in commercial refill liquids for electronic cigarettes. The influence of main factors affecting the ion mobility separation, such as modifier types and concentration, separation voltage, and temperature, was systematically investigated. Despite small molecular weight differences among the studied compounds, a good separation was achieved in the ion mobility cell under the optimized conditions, which involved the use of ethanol as a polar gas-phase chemical modifier. Indeed, differential ion mobility was able to resolve (resolution >4) nicotine from its structural isomer anabasine without the use of any chromatographic separation. The quantitative performance of the proposed method was then evaluated, showing satisfactory precision (RSD ≤ 16%) and recoveries ranging from 85 to 100% for nicotine, and from 84 to 126% for the rest of the target analytes. Several commercial electronic cigarette refill liquids were analyzed to demonstrate the applicability of the method. In some cases, significant differences were found between labeled and measured levels of nicotine. Anatabine, cotinine, myosmine, and nornicotine were also found in some of the analyzed samples.

  14. Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

    Science.gov (United States)

    Armstrong, Andrew M.; Klein, Brianna; Allerman, Andrew A.; Douglas, Erica A.; Baca, Albert G.; Crawford, Mary H.; Pickrell, Greg W.; Sanchez, Carlos A.

    2018-03-01

    Visible- and solar-blind detection was demonstrated using Al0.45Ga0.55N/Al0.30Ga0.70N and Al0.85Ga0.25N/Al0.70Ga0.30N high electron mobility transistors (HEMTs), respectively. Peak responsivities (S) of 3.9 × 106 A/W in the saturation mode and 6.2 × 104 A/W in the pinch-off mode were observed for the visible-blind Al0.45Ga0.55N/Al0.30Ga0.70N HEMT, and a peak S of 4.9 × 104 A/W was observed for the solar-blind Al0.85Ga0.15N/Al0.70Ga0.30N HEMT in the saturation mode. Spectrally resolved photocurrent investigation indicated that sub-bandgap absorption by defect states was the primary origin of the HEMTs' photoresponse. Defect-mediated responsivity caused slow photocurrent rise and fall times, but electrical pulsing was used to improve the bandwidth at the cost of optical gain. Operating HEMTs in this dynamic mode achieved a 25 Hz bandwidth with S = 2.9 × 105 A/W in accumulation and S = 2.0 × 104 A/W in pinch-off for visible-blind detection and S = 5.1 × 103 A/W for solar-blind detection.

  15. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    International Nuclear Information System (INIS)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-01-01

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  16. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  17. Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

    Science.gov (United States)

    Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

    2018-09-01

    In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

  18. INTERFACE ELECTRONIC MEDICAL CARD ON MOBILE DEVICE

    Directory of Open Access Journals (Sweden)

    Y. L. Nechyporenko

    2013-05-01

    Full Text Available The concept designed by electronic medical card for heterogeneous environment of medical information systems at various levels. Appropriate model and technical solution. Done evaluating operating systems for mobile devices. Designed and produced by the project mobile application on Android OS as an electronic medical record on a Tablet PC Acer.

  19. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

    International Nuclear Information System (INIS)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Wei-Wei; Hao, Yue

    2014-01-01

    Trap states in Al 0.55 Ga 0.45 N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al 2 O 3 /Al 0.55 Ga 0.45 N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10 13 eV −1 ·cm −2 . Al 2 O 3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs

  20. Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate

    International Nuclear Information System (INIS)

    Arulkumaran, S.; Liu, Z.H.; Ng, G.I.; Cheong, W.C.; Zeng, R.; Bu, J.; Wang, H.; Radhakrishnan, K.; Tan, C.L.

    2007-01-01

    The influence of temperature (- 50 deg. C to + 200 deg. C) was studied on the DC and microwave characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on high resistivity Si substrate for the first time. The AlGaN/GaN HEMTs exhibited a current-gain cut-off frequency (f T ) of 11.8 GHz and maximum frequency of oscillation (f max ) of 27.5 GHz. When compared to room temperature values, about 4% and 10% increase in f T and f max and 23% and 39.5% decrease in f T and f max were observed when measured at - 50 deg. C and 200 deg. C, respectively. The improvement of I D , g m f T , and f max at - 50 deg. C is due to the enhancement of 2DEG mobility and effective electron velocity. The anomalous drain current reduction in the I-V curves were observed at low voltage region at the temperature ≤ 10 deg. C but disappeared when the temperature reached ≥ 25 deg. C. A positive threshold voltage (V th ) shift was observed from - 50 deg. C to 200 deg. C. The positive shift of V th is due to the occurrence of trapping effects in the devices. The drain leakage current decreases with activation energies of 0.028 eV and 0.068 eV. This decrease of leakage current with the increase of temperature is due to the shallow acceptor initiated impact ionization

  1. Behaviour of Bichromatic Microwave Induced Magnetoresistance Oscillations in the High Mobility GaAs/AlGaAs 2D electron System

    International Nuclear Information System (INIS)

    Gunawardana, Binuka; Liu, Han-Chun; Samaraweera, Rasanga L.; Mani, R.G.; Reichl, C.; Wegscheider, W

    2017-01-01

    Microwave radiation-induced magneto-resistance oscillations are examined under bichromatic excitation for various frequency combinations in order to obtain a better understanding of the lineshape observed in the dual excitation experiment of the high mobility GaAs/AlGaAs 2D electron system. Here, we examine superposition- or lack thereof- in the lineshape observed in the bichromatic experiment, and report a trend observed between the monochromatic and bichromatic responses of the oscillatory diagonal resistance. (paper)

  2. Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

    International Nuclear Information System (INIS)

    Yu Xin-Hai; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Xi Xiao-Wen

    2015-01-01

    The high power microwave (HPM) damage effect on the AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ −0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy (SEM) illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device burn-out and the location beneath the gate near the source side is most susceptible to burn-out, which is in accordance with the simulated results. (paper)

  3. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

    Science.gov (United States)

    Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

    2016-11-21

    AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

  4. Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

    International Nuclear Information System (INIS)

    So, Hongyun; Senesky, Debbie G.

    2016-01-01

    In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area

  5. Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces

    Energy Technology Data Exchange (ETDEWEB)

    So, Hongyun, E-mail: hyso@stanford.edu [Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305 (United States); Senesky, Debbie G. [Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305 (United States); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-01-04

    In this letter, three-dimensional gateless AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated with 54% reduction in electrical resistance and 73% increase in surface area compared with conventional gateless HEMTs on planar substrates. Inverted pyramidal AlGaN/GaN surfaces were microfabricated using potassium hydroxide etched silicon with exposed (111) surfaces and metal-organic chemical vapor deposition of coherent AlGaN/GaN thin films. In addition, electrical characterization of the devices showed that a combination of series and parallel connections of the highly conductive two-dimensional electron gas along the pyramidal geometry resulted in a significant reduction in electrical resistance at both room and high temperatures (up to 300 °C). This three-dimensional HEMT architecture can be leveraged to realize low-power and reliable power electronics, as well as harsh environment sensors with increased surface area.

  6. Cross-field Mobility in a Pure Electron Plasma

    International Nuclear Information System (INIS)

    Fossum, E.C.; King, L.B.

    2006-01-01

    An electron trapping apparatus was constructed in order to study electron dynamics in the defining electric and magnetic field of a Hall-effect thruster. The approach presented here decouples the cross-field mobility from plasma effects by conducting measurements on a pure electron plasma in a highly controlled environment. Dielectric walls are removed completely eliminating all wall effect; thus, electrons are confined solely by a radial magnetic field and a crossed, independently-controlled, axial electric field that induces the closed-drift azimuthal Hall current. Electron trajectories and cross-field mobility were examined in response to electric and magnetic field strength and background neutral density

  7. High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

    Science.gov (United States)

    Charles, M.; Baines, Y.; Bavard, A.; Bouveyron, R.

    2018-02-01

    It is increasingly important to reduce the cycle time of epitaxial growth, in order to reduce the costs of device fabrication, especially for GaN based structures which typically have growth cycles of several hours. We have performed a comprehensive study using metal-organic vapor phase epitaxy (MOVPE) investigating the effects of changing GaN growth rates from 0.9 to 14.5 μm/h. Although there is no significant effect on the strain incorporated in the layers, we have seen changes in the surface morphology which can be related to the change in dislocation behaviour and surface diffusion effects. At the small scale, as seen by AFM, increased dislocation density for higher growth rates leads to increased pinning of growth terraces, resulting in more closely spaced terraces. At a larger scale of hundreds of μm observed by optical profiling, we have related the formation of grains to the rate of surface diffusion of adatoms using a random walk model, implying diffusion distances from 30 μm for the highest growth rates up to 100 μm for the lowest. The increased growth rate also increases the intrinsic carbon incorporation which can increase the breakdown voltage of GaN films. Despite an increased threading dislocation density, these very high growth rates of 14.5 μm/hr by MOVPE have been shown to be appealing for reducing epitaxial growth cycle times and therefore costs in High Electron Mobility Transistor (HEMT) structures.

  8. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    International Nuclear Information System (INIS)

    Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

    2015-01-01

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

  9. An enzymatic biosensor based on three-dimensional ZnO nanotetrapods spatial net modified AlGaAs/GaAs high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yu [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology, Beijing 100083 (China); Bioengineering Program, Lehigh University, Bethlehem, Pennsylvania 18015 (United States); Zhang, Xiaohui; Yan, Xiaoqin; Liao, Qingliang; Wang, Zengze; Zhang, Yue, E-mail: yuezhang@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology, Beijing 100083 (China)

    2014-11-24

    We designed and constructed three dimensional (3D) zinc oxide Nanotetrapods (T-ZnOs) modified AlGaAs/GaAs high electron mobility transistors (HEMTs) for enzymatic uric acid (UA) detection. The chemical vapor deposition synthesized T-ZnOs was distributed on the gate areas of HEMTs in order to immobilize uricase and improve the sensitivity of the HEMTs. Combining with the high efficiency of enzyme immobilization by T-ZnOs and high sensitivity from HEMT, the as-constructed uricase/T-ZnOs/HEMTs biosensor showed fast response towards UA at ∼1 s, wide linear range from 0.2 nM to 0.2 mM and the low detect limit at 0.2 nM. The results point out an avenue to design electronic device as miniaturized lab-on-chip device for high sensitive and specific in biomedical and clinical diagnosis applications.

  10. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Tao [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China); Xu, Ruimin [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Kong, Yuechan, E-mail: kycfly@163.com; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng [Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

    2015-06-15

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

  11. Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Webb, James B.; Tang, H.; Bardwell, J. A.; Coleridge, P.

    2001-01-01

    Ammonia molecular-beam epitaxy has been used to grow high-quality epilayers of GaN and AlGaN/GaN heterostructure field-effect transistor (HFET) structures on insulating 4H-SiC. The growth process, which used a magnetron sputter epitaxy deposited buffer layer of AlN, has been described previously. Ex situ pretreatment of the SiC substrate was found to be unnecessary. For a single 2.0 μm thick silicon doped epilayer, a room temperature (RT) electron mobility of 500 cm2/Vs was measured at a carrier density of 6.6x10 16 cm -3 . For the HFET structure, a room temperature mobility of 1300 cm2/Vs at a sheet carrier density of 3.3x10 12 cm -2 was observed, increasing to 11000 cm2/Vs at 77 K. The surface morphology of the layers indicated a coalesced mesa structure similar to what we observed for growth on sapphire, but with a lower overall defect density and correspondingly larger grain size. The observation of well-resolved Shubnikov de Haas oscillations at fields as low as 3 T indicated a relatively smooth interface. [copyright] 2001 American Institute of Physics

  12. Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lugani, L.; Carlin, J.-F.; Py, M. A.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2014-09-15

    We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 °C and show that they are not fully stable. In particular, InAlN top layers undergo degradation during high temperature annealing due to a surface related process, which causes the loss of crystal quality. This strongly impacts the transport properties of InAlN/GaN HEMT heterostructures; in particular, the mobility is significantly reduced. However, we demonstrate that high thermal stability can be achieved by capping with a GaN layer as thin as 0.5 nm. Those findings enabled us to realize in situ passivated HEMT heterostructures with state of the art transport properties.

  13. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  14. Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Ling, Yang; Gui-Zhou, Hu; Yue, Hao; Xiao-Hua, Ma; Si, Quan; Li-Yuan, Yang; Shou-Gao, Jiang

    2010-01-01

    This paper investigates the impact of electrical degradation and current collapse on different thickness SiN x passivated AlGaN/GaN high electron mobility transistors. It finds that higher thickness SiN x passivation can significantly improve the high-electric-field reliability of a device. The degradation mechanism of the SiN x passivation layer under ON-state stress has also been discussed in detail. Under the ON-state stress, the strong electric-field led to degradation of SiN x passivation located in the gate-drain region. As the thickness of SiN x passivation increases, the density of the surface state will be increased to some extent. Meanwhile, it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

    International Nuclear Information System (INIS)

    Mishra, Manna Kumari; Sharma, Rajesh K.; Manchanda, Rachna; Bag, Rajesh K.; Muralidharan, Rangarajan; Thakur, Om Prakash

    2014-01-01

    Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence of the two dimensional electron gas mobility is extracted from simultaneous multicarrier fitting of transverse and longitudinal resistivity as a function of magnetic field and the data is utilized to estimate contribution of interface roughness to the mobility and the corresponding transport lifetime. The quantum scattering time obtained from the analysis of Shubnikov de Haas Oscillations in transverse magnetoresistance along with the transport lifetime time were used to estimate interface roughness amplitude and lateral correlation length. The results indicate that the insertion of AlN over layer deposited prior to the growth of GaN base layer on Fe doped GaN templates for forming HEMT structures reduced the parallel conduction but resulted in an increase in interface roughness

  16. Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Manna Kumari [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054 (India); Netaji Subhas Institute of Technology, Dwarka, New Delhi-110078 (India); Sharma, Rajesh K., E-mail: rksharma@sspl.drdo.in; Manchanda, Rachna; Bag, Rajesh K.; Muralidharan, Rangarajan [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054 (India); Thakur, Om Prakash [Netaji Subhas Institute of Technology, Dwarka, New Delhi-110078 (India)

    2014-09-15

    Magnetotransport in two distinct AlGaN/GaN HEMT structures grown by Molecular Beam Epitaxy (MBE) on Fe-doped templates is investigated using Shubnikov de-Haas Oscillations in the temperature range of 1.8–6 K and multicarrier fitting in the temperature range of 1.8–300 K. The temperature dependence of the two dimensional electron gas mobility is extracted from simultaneous multicarrier fitting of transverse and longitudinal resistivity as a function of magnetic field and the data is utilized to estimate contribution of interface roughness to the mobility and the corresponding transport lifetime. The quantum scattering time obtained from the analysis of Shubnikov de Haas Oscillations in transverse magnetoresistance along with the transport lifetime time were used to estimate interface roughness amplitude and lateral correlation length. The results indicate that the insertion of AlN over layer deposited prior to the growth of GaN base layer on Fe doped GaN templates for forming HEMT structures reduced the parallel conduction but resulted in an increase in interface roughness.

  17. Spin dynamics in high-mobility two-dimensional electron systems embedded in GaAs/AlGaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Griesbeck, Michael

    2012-11-22

    Since many years there has been great effort to explore the spin dynamics in low-dimensional electron systems embedded in GaAs/AlGaAs based heterostructures for the purpose of quantum computation and spintronics applications. Advances in technology allow for the design of high quality and well-defined two-dimensional electron systems (2DES), which are perfectly suited for the study of the underlying physics that govern the dynamics of the electron spin system. In this work, spin dynamics in high-mobility 2DES is studied by means of the all-optical time-resolved Kerr/Faraday rotation technique. In (001)-grown 2DES, a strong in-plane spin dephasing anisotropy is studied, resulting from the interference of comparable Rashba and Dresselhaus contributions to the spin-orbit field (SOF). The dependence of this anisotropy on parameters like the confinement length of the 2DES, the sample temperature, as well as the electron density is demonstrated. Furthermore, coherent spin dynamics of an ensemble of ballistically moving electrons is studied without and within an applied weak magnetic field perpendicular to the sample plane, which forces the electrons to move on cyclotron orbits. Finally, strongly anisotropic spin dynamics is investigated in symmetric (110)-grown 2DES, using the resonant spin amplification method. Here, extremely long out-of-plane spin dephasing times can be achieved, in consequence of the special symmetry of the Dresselhaus SOF.

  18. AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

    Directory of Open Access Journals (Sweden)

    Xinke Liu

    2017-09-01

    Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

  19. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    International Nuclear Information System (INIS)

    Deen, David A.; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C.; Gougousi, Theodosia; Evans, Keith R.

    2014-01-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm 2 /V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  20. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375-5347 (United States); Gougousi, Theodosia [Physics Department, University of Maryland Baltimore County, Baltimore, Maryland 21250 (United States); Evans, Keith R. [Kyma Technologies, Raleigh, North Carolina 27617 (United States)

    2014-09-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm{sup 2}/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  1. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2014-08-01

    GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

  2. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    Energy Technology Data Exchange (ETDEWEB)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  3. Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

    International Nuclear Information System (INIS)

    Ling, Yang; Yue, Hao; Xiao-Hua, Ma; Jing-Jing, Ma; Cheng, Zhu

    2010-01-01

    The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance R Gate , channel resistance R channel , gate current I G,off at V GS = −5 and V DS = 0.1 V, and drain current I D,max at V GS = 2 and V DS = 5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    International Nuclear Information System (INIS)

    Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-01-01

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f t and f max in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

  5. The fabrication of a back-gated high electron mobility transistor - a novel approach using MBE regrowth on an in situ ion beam patterned epilayer

    International Nuclear Information System (INIS)

    Linfield, E.H.; Jones, G.A.C.; Ritchie, D.A.; Thompson, J.H.

    1993-01-01

    A new technique for the fabrication of GaAs/AlGaAs back-gated high electron mobility transistors (HEMTs) is described in this paper. First we demonstrate that a dose of > 2 x 10 13 cm -2 Ga ions at an energy of 10 keV can be used to damage a 67 nm n + GaAs layer, rendering the implanted regions non-conducting. After implantation the epilayer has a 4 K sheet resistivity which is increased by a factor of ∼ 10 7 when compared with the original unimplanted value. This isolation procedure is then used to form a patterned back-gated HEMT by MBE regrowth on top of an in situ ion-implanted n + GaAs layer. The resulting structure is designed so that the back gate is rendered highly resistive under the regions where the ohmic contacts to the two-dimensional electron gas (2DEG) are formed, thus making shallow ohmic contacts unnecessary. The results obtained characteristic of a high-quality 2DEG with mobility limited by remote ionized impurity scattering. This technique can therefore be used as a means of controlling the 2DEG carrier concentration, whilst leaving the surface of the HEMT structure free for conventional lithographic processing. (Author)

  6. Interface characteristics of spin-on-dielectric SiO{sub x}-buffered passivation layers for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of); Sheen, Mi-Hyang [Department of Materials Science Engineering, Seoul National University, 151-742 Seoul (Korea, Republic of); Kim, Sam-Dong, E-mail: samdong@dongguk.edu [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of)

    2015-08-31

    To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO{sub x}-buffered passivation structure compared to the conventional Si{sub 3}N{sub 4} passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si{sub 3}N{sub 4} passivation was in the range of 10{sup 12}–10{sup 13} cm{sup −2} eV{sup −1}, which is one-order higher than that of the SOD (10{sup 11}–10{sup 12} cm{sup −2} eV{sup −1}) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si{sub 3}N{sub 4} passivation. A well-resolved reduction of the electron Hall mobility of the Si{sub 3}N{sub 4} passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics.

  7. Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Pang Liang; Kim, Kyekyoon

    2012-01-01

    A bimodal deposition scheme combining radiofrequency magnetron sputtering and plasma enhanced chemical vapour deposition (PECVD) is proposed as a means for improving the performance of GaN-based metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). High-density sputtered-SiO 2 is utilized to reduce the gate leakage current and enhance the breakdown voltage while low-density PECVD-SiO 2 is employed to buffer the sputtering damage and further increase the drain current by engineering the stress-induced-polarization. Thus-fabricated MOSHEMT exhibited a low leakage current of 4.21 × 10 -9 A mm -1 and high breakdown voltage of 634 V for a gate-drain distance of 6 µm, demonstrating the promise of bimodal-SiO 2 deposition scheme for the development of GaN-based MOSHEMTs for high-power application. (paper)

  8. X-ray diffraction study of InAlAs-InGaAs on InP high electron mobility transistor structure prepared by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Liu, H.Y.; Kao, Y.C.; Kim, T.S.

    1990-01-01

    High-electron mobility transistors (HEMTs) can be prepared by growing alternating epitaxial layers of InAlAs and InGaAs on InP substrates. Lattice matched HEMTs are obtained by growing layers of IN x Al (1-x) As and In y Ga (1-y) As with x ≅ 0.5227 and y ≅ 0.5324. Varying the values of x and y by controlling the individual flux during molecular-beam epitaxial (MBE) growth, one can obtain pseudomorphic HEMTs. Pseudomorphic HEMTs may have superior electronic transport properties and larger conduction band discontinuity when compared to an unstrained one. The precise control of the composition is thus important to the properties of HEMTs. This control is however very difficult and the values of x and y may vary from run to run. The authors demonstrate in this paper the capability of a double crystal rocking curve (DCRC) on the structure characterization

  9. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Bhasker, H. P.; Dhar, S.; Sain, A.; Kesaria, Manoj; Shivaprasad, S. M.

    2012-01-01

    Transport and optical properties of random networks of c-axis oriented wedge-shaped GaN nanowalls grown spontaneously on c-plane sapphire substrates through molecular beam epitaxy are investigated. Our study suggests a one dimensional confinement of carriers at the top edges of these connected nanowalls, which results in a blue shift of the band edge luminescence, a reduction of the exciton-phonon coupling, and an enhancement of the exciton binding energy. Not only that, the yellow luminescence in these samples is found to be completely suppressed even at room temperature. All these changes are highly desirable for the enhancement of the luminescence efficiency of the material. More interestingly, the electron mobility through the network is found to be significantly higher than that is typically observed for GaN epitaxial films. This dramatic improvement is attributed to the transport of electrons through the edge states formed at the top edges of the nanowalls.

  10. AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

    Science.gov (United States)

    Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

    1997-10-01

    Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

  11. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup −14} to 10{sup −8} M and a detection limit below 10{sup −14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  12. AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

    International Nuclear Information System (INIS)

    Wang Chong; He Yun-Long; Zheng Xue-Feng; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2013-01-01

    AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current—gain cutoff frequency (f T ) of 10 GHz and a power gain cutoff frequency (f max ) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C—V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C—V dual sweep

  13. Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump

    International Nuclear Information System (INIS)

    Ling, Yang; Yue, Hao; Xiao-Hua, Ma; Si, Quan; Gui-Zhou, Hu; Shou-Gao, Jiang; Li-Yuan, Yang

    2009-01-01

    The current slump of different recipes of SiN x passivated AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. The dc and pulsed current-voltage curves of AlGaN/GaN HEMTs using different recipes are analyzed. It is found that passivation leakage has a strong relationship with NH 3 flow in the plasma-enhanced chemical vapor phase deposition process, which has impacted on the current collapse of SiN x passivated devices. We analyze the pulsed I DS – V DS characteristics of different recipes of SiN x passivation devices for different combinations of gate and drain quiescent biases (V GS0 , V DS0 ) of (0, 0), (−6, 0), (−6, 15) and (0, 15)V. The possible mechanisms are the traps in SiN x passivation capturing the electrons and the surface states at the SiN x /AlGaN interface, which can affect the channel of two-dimensional electron gas and cause the current collapse. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

    International Nuclear Information System (INIS)

    Han Tie-Cheng; Zhao Hong-Dong; Yang Lei; Wang Yang

    2017-01-01

    In this work, we use a 3-nm-thick Al 0.64 In 0.36 N back-barrier layer in In 0.17 Al 0.83 N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al 0.64 In 0.36 N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al 0.64 In 0.36 N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier). For a 70-nm gate length, the peak current gain cut-off frequency ( f T ) and power gain cut-off frequency ( f max ) of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length. (paper)

  15. Metalorganic chemical vapor deposition growth and thermal stability of the AlInN/GaN high electron mobility transistor structure

    International Nuclear Information System (INIS)

    Yu, Hongbo; Ozturk, Mustafa; Demirel, Pakize; Cakmak, Huseyin; Bolukbas, Basar; Caliskan, Deniz; Ozbay, Ekmel

    2011-01-01

    The Al x In 1−x N barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor structure comprising a 7 nm thick nearly lattice-matched Al 0.83 In 0.17 N barrier exhibits a sheet electron density of 2.0 × 10 13 cm −2 with a high electron mobility of 1540 cm 2 V −1 s −1 . An Al 0.83 In 0.17 N barrier HEMT device with 1 µm gate length provides a current density of 1.0 A mm −1 at V GS = 0 V and an extrinsic transconductance of 242 mS mm −1 , which are remarkably improved compared to that of a conventional Al 0.3 Ga 0.7 N barrier HEMT. To investigate the thermal stability of the HEMT epi-structures, post-growth annealing experiments up to 800 °C have been applied to Al 0.83 In 0.17 N and Al 0.3 Ga 0.7 N barrier heterostructures. As expected, the electrical properties of an Al 0.83 In 0.17 N barrier HEMT structure showed less stability than that of an Al 0.3 Ga 0.7 N barrier HEMT to the thermal annealing. The structural properties of Al 0.83 In 0.17 N/GaN also showed more evidence for decomposition than that of the Al 0.3 Ga 0.7 N/GaN structure after 800 °C post-annealing

  16. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

    International Nuclear Information System (INIS)

    Hiroki, Masanobu; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki

    2014-01-01

    We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated

  17. Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

    International Nuclear Information System (INIS)

    Tsai, Jung-Hui; Ye, Sheng-Shiun; Guo, Der-Feng; Lour, Wen-Shiung

    2012-01-01

    Influence corresponding to the position of δ-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the device with lower δ-doped supplied layer shows a higher gate potential barrier height, a higher saturation output current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the device with upper δ-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency characteristics in the device with lower δ-doped supplied layer. Furthermore, a knee effect in current-voltage curves is observed at low drain-to-source voltage in the two devices, which is investigated in this article.

  18. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

    Energy Technology Data Exchange (ETDEWEB)

    Hiroki, Masanobu, E-mail: hiroki.masanobu@lab.ntt.co.jp; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki [NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi 243-0198 (Japan)

    2014-11-10

    We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.

  19. Efficient electronic entanglement concentration assisted by single mobile electrons

    International Nuclear Information System (INIS)

    Sheng Yu-Bo; Zhou Lan

    2013-01-01

    We present an efficient entanglement concentration protocol (ECP) for mobile electrons with charge detection. This protocol is quite different from other ECPs for one can obtain a maximally entangled pair from a pair of less-entangled state and a single mobile electron with a certain probability. With the help of charge detection, it can be repeated to reach a higher success probability. It also does not need to know the coefficient of the original less-entangled states. All these advantages may make this protocol useful in current distributed quantum information processing

  20. Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    International Nuclear Information System (INIS)

    Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

    2013-01-01

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO 2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO 2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device

  1. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  2. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  3. Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Shervin, Shahab; Asadirad, Mojtaba [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204-4006 (United States); Materials Science and Engineering Program, University of Houston, Houston, Texas 77204 (United States); Kim, Seung-Hwan; Ravipati, Srikanth; Lee, Keon-Hwa [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204-4006 (United States); Bulashevich, Kirill [STR Group, Inc., Engels av. 27, P.O. Box 89, 194156, St. Petersburg (Russian Federation); Ryou, Jae-Hyun, E-mail: jryou@uh.edu [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204-4006 (United States); Materials Science and Engineering Program, University of Houston, Houston, Texas 77204 (United States); Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204 (United States)

    2015-11-09

    This paper presents strain-effect transistors (SETs) based on flexible III-nitride high-electron-mobility transistors (HEMTs) through theoretical calculations. We show that the electronic band structures of InAlGaN/GaN thin-film heterostructures on flexible substrates can be modified by external bending with a high degree of freedom using polarization properties of the polar semiconductor materials. Transfer characteristics of the HEMT devices, including threshold voltage and transconductance, are controlled by varied external strain. Equilibrium 2-dimensional electron gas (2DEG) is enhanced with applied tensile strain by bending the flexible structure with the concave-side down (bend-down condition). 2DEG density is reduced and eventually depleted with increasing compressive strain in bend-up conditions. The operation mode of different HEMT structures changes from depletion- to enchantment-mode or vice versa depending on the type and magnitude of external strain. The results suggest that the operation modes and transfer characteristics of HEMTs can be engineered with an optimum external bending strain applied in the device structure, which is expected to be beneficial for both radio frequency and switching applications. In addition, we show that drain currents of transistors based on flexible InAlGaN/GaN can be modulated only by external strain without applying electric field in the gate. The channel conductivity modulation that is obtained by only external strain proposes an extended functional device, gate-free SETs, which can be used in electro-mechanical applications.

  4. a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors.

    Science.gov (United States)

    Song, Weidong; Wang, Rupeng; Wang, Xingfu; Guo, Dexiao; Chen, Hang; Zhu, Yuntao; Liu, Liu; Zhou, Yu; Sun, Qian; Wang, Li; Li, Shuti

    2017-11-29

    Micro/nanowire-based devices have been envisioned as a promising new route toward improved electronic and optoelectronic applications, which attracts considerable research interests. However, suffering from applicable strategies to synthesize uniform core-shell structures to meet the requirement for the investigations of electrical transport behaviors along the length direction or high electron mobility transistor (HEMT) devices, heterojunction wire-based electronics have been explored limitedly. In the present work, GaN/AlN/AlGaN core-shell heterojunction microwires on patterned Si substrates were synthesized without any catalyst via metalorganic chemical vapor deposition. The as-synthesized microwires had low dislocation, sharp, and uniform heterojunction interfaces. Electrical transport performances were evaluated by fabricating HEMTs on the heterojunction microwire channels. Results demonstrated that a normally off operation was achieved with a threshold voltage of 1.4 V, a high on/off current ratio of 10 8 , a transconductance of 165 mS/mm, and a low subthreshold swing of 81 mV/dec. The normally off operation may attribute to the weak polarization along semipolar facets of the heterojunction, which leads to weak constrain of 2DEG.

  5. Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors

    Science.gov (United States)

    Kim, Seongjun; Ahn, Kwang-Soon; Ryou, Jae-Hyun; Kim, Hyunsoo

    2017-07-01

    A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current ( I DS,max) of 700 mA/mm at a gate bias voltage ( V GS) of 0 V and a maximum transconductance ( g m,max) of 190 mS/mm at drain-source voltage ( V DS) of 5 V, was analyzed at temperatures ranging from 210 K to 420 K. It was found that I DS,max and g m,max have weak temperature dependence with a power-law relation of T -0.5, owing to suppressed optical phonon scattering. The threshold voltage ( V th) was found to be stable under increasing temperatures owing to the use of a semi-insulating AlInN:Mg barrier. This indicates that AlInN:Mg/GaN HEMTs are promising candidates for high-temperature electronics applications.[Figure not available: see fulltext.

  6. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

    International Nuclear Information System (INIS)

    Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Lu, Liu; Ren, Fan; Holzworth, M. R.; Jones, Kevin S.; Pearton, Stephen J.; Smith, David J.; Kim, Jihyun; Zhang, Ming-Lan

    2015-01-01

    The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing

  7. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wan Xiaojia; Wang Xiaoliang; Xiao Hongling; Feng Chun; Jiang Lijuan; Qu Shenqi; Wang Zhanguo; Hou Xun

    2013-01-01

    Current collapses were studied, which were observed in AlGaN/GaN high electron mobility transistors (HEMTs) with and without InGaN back barrier (BB) as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB AlGaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in AlGaN/GaN HEMTs for short-term direct current stress. (semiconductor devices)

  8. Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

    International Nuclear Information System (INIS)

    Hofstetter, Markus; Funk, Maren; Paretzke, Herwig G.; Thalhammer, Stefan; Howgate, John; Sharp, Ian D.; Stutzmann, Martin

    2010-01-01

    We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the μGy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.

  9. Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

    2016-07-25

    Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

  10. Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

    International Nuclear Information System (INIS)

    Sun, Huarui; Bajo, Miguel Montes; Uren, Michael J.; Kuball, Martin

    2015-01-01

    Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage “hot spots” at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7–0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which is consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites

  11. Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

    International Nuclear Information System (INIS)

    Katsuno, Takashi; Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu; Manaka, Takaaki; Iwamoto, Mitsumasa

    2014-01-01

    Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800 μs) the completion of drain-stress voltage (200 V) in the off-state, the second-harmonic (SH) signals appeared within 2 μm from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

  12. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.

    Science.gov (United States)

    Lee, Hee Ho; Bae, Myunghan; Jo, Sung-Hyun; Shin, Jang-Kyoo; Son, Dong Hyeok; Won, Chul-Ho; Jeong, Hyun-Min; Lee, Jung-Hee; Kang, Shin-Won

    2015-07-28

    In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

  13. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

    Directory of Open Access Journals (Sweden)

    Hee Ho Lee

    2015-07-01

    Full Text Available In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT-based biosensor for the detection of C-reactive protein (CRP using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

  14. Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment

    Science.gov (United States)

    He, Yunlong; Wang, Chong; Mi, Minhan; Zhang, Meng; Zhu, Qing; Zhang, Peng; Wu, Ji; Zhang, Hengshuang; Zheng, Xuefeng; Yang, Ling; Duan, Xiaoling; Ma, Xiaohua; Hao, Yue

    2017-05-01

    A novel enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) has been fabricated, by combining nanowire channel (NC) structure fabrication and N2O (or O2) plasma treatment. A comparison of two NC-HEMTs with different plasma treatments has been made. The NC-HEMT with N2O plasma treatment shows an output current of 610 mA/mm and a peak transconductance of 450 mS/mm. The DIBL of the NC-HEMT with N2O plasma treatment is as low as 2 mV/V, and an SS of 70 mV/decade is achieved. The device exhibits an intrinsic current gain cutoff frequency f T of 19 GHz and a maximum oscillation frequency f max of 58 GHz.

  15. N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching

    Science.gov (United States)

    Prasertsuk, Kiattiwut; Tanikawa, Tomoyuki; Kimura, Takeshi; Kuboya, Shigeyuki; Suemitsu, Tetsuya; Matsuoka, Takashi

    2018-01-01

    The metal-insulator-semiconductor (MIS) gate N-polar GaN/AlGaN/GaN high-electron-mobility transistor (HEMT) on a (0001) sapphire substrate, which can be expected to operate with lower on-resistance and more easily work on the pinch-off operation than an N-polar AlGaN/GaN HEMT, was fabricated. For suppressing the step bunching and hillocks peculiar in the N-polar growth, a sapphire substrate with an off-cut angle as small as 0.8° was introduced and an N-polar GaN/AlGaN/GaN HEMT without the step bunching was firstly obtained by optimizing the growth conditions. The previously reported anisotropy of transconductance related to the step was eliminated. The pinch-off operation was also realized. These results indicate that this device is promising.

  16. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

    Science.gov (United States)

    Anderson, Travis J.; Koehler, Andrew D.; Tadjer, Marko J.; Hite, Jennifer K.; Nath, Anindya; Mahadik, Nadeemullah A.; Aktas, Ozgur; Odnoblyudov, Vladimir; Basceri, Cem; Hobart, Karl D.; Kub, Francis J.

    2017-12-01

    AlGaN/GaN high-electron-mobility transistor (HEMT) device layers were grown by metal organic chemical vapor deposition (MOCVD) on commercial engineered QST™ substrates to demonstrate a path to scalable, cost-effective foundry processing while supporting the thick epitaxial layers required for power HEMT structures. HEMT structures on 150 mm Si substrates were also evaluated. The HEMTs on engineered substrates exhibited material quality, DC performance, and forward blocking performance superior to those of the HEMT on Si. GaN device layers up to 15 µm were demonstrated with a wafer bow of 1 µm, representing the thickest films grown on 150-mm-diameter substrates with low bow to date.

  17. Design and characterisation of high electron mobility transistors for use in a monolithic GaAs X-ray imaging sensor

    International Nuclear Information System (INIS)

    Boardman, D.A.; Sellin, P.J.

    2001-01-01

    A new design of monolithic GaAs pixel detector is proposed for medical and synchrotron applications. In this device a semi-insulating GaAs wafer will be used as both the detector element and the substrate for the integrated charge readout matrix. The charge readout matrix consists of High Electron Mobility Transistors (HEMTs), which are grown epitaxially onto the GaAs substrate. Experimental characterisation of HEMTs has been carried out and their suitability for the proposed imaging device is assessed. Temperature measurements on initial devices showed the threshold voltage to be stable from room temperature down to -15 degree sign C. HEMT designs with lower leakage current that operate in enhancement mode have been fabricated and modelled using the Silvaco simulation package. These optimised devices have been fabricated using a gate recess, and exhibit enhancement mode operation and significantly reduced gate leakage currents

  18. Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

    International Nuclear Information System (INIS)

    Ma Xiao-Hua; Zhang Ya-Man; Chen Wei-Wei; Wang Xin-Hua; Yuan Ting-Ting; Pang Lei; Liu Xin-Yu

    2015-01-01

    In this paper, the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors (HEMTs), featuring a 50-nm and a 150-nm GaN thick channel layer, respectively, are compared. The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage (BV off ). Device simulation indicates that thickening the channel increases the drain-induced barrier lowering (DIBL) but reduces the lateral electric field in the channel and buffer underneath the gate. The increase of BV off in the thick channel device is due to the reduction of the electric field. These results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BV off in AlGaN/GaN HEMTs. (paper)

  19. Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels

    International Nuclear Information System (INIS)

    Shiktorov, P; Starikov, E; Gružinskis, V; Varani, L; Sabatini, G; Marinchio, H; Reggiani, L

    2009-01-01

    In the framework of analytical and hydrodynamic models for the description of carrier transport and noise in high electron mobility transistor/field-effect transistor channels the main features of the intrinsic noise of transistors are investigated under continuous branching of the current between channel and gate. It is shown that the current-noise and voltage-noise spectra at the transistor terminals contain an excess noise related to thermal excitation of plasma wave modes in the dielectric layer between the channel and gate. It is found that the set of modes of excited plasma waves can be governed by the external embedding circuits, thus violating a universal description of noise in terms of Norton and Thevenin noise generators

  20. Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

    Science.gov (United States)

    Lee, Ching-Ting; Wang, Chun-Chi

    2018-04-01

    To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195 nm, respectively. In view of the enhanced gate controllability in a narrower fin-channel structure, the transconductance was improved from 115 mS/mm to 151 mS/mm, the unit gain cutoff frequency was improved from 6.2 GHz to 6.8 GHz, and the maximum oscillation frequency was improved from 12.1 GHz to 13.1 GHz of the devices with a channel width of 195 nm, compared with the devices with a channel width of 450 nm.

  1. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    Science.gov (United States)

    Anand, M. J.; Ng, G. I.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.; Syamal, B.; Zhou, X.

    2015-02-01

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-RDS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with devices of different gate-drain spacing (Lgd) under the same OFF-state stress. Under high-EF (Lgd = 2 μm), the devices exhibited higher dyn-RDS[ON] degradation but a small ΔVth (˜120 mV). However, at low-EF (Lgd = 5 μm), smaller dyn-RDS[ON] degradation but a larger ΔVth (˜380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-RDS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔVth. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by ID-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  2. Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands.

    Science.gov (United States)

    Liu, Chao Ping; Ho, Chun Yuen; Dos Reis, Roberto; Foo, Yishu; Guo, Peng Fei; Zapien, Juan Antonio; Walukiewicz, Wladek; Yu, Kin Man

    2018-02-28

    In this work, we have synthesized Cd 1-x Ga x O 1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd 1-x Ga x O 1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm 2 V -1 s -1 with a resistivity in the range of 10 -2 to high 10 -4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10 -4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.

  3. Is mobile learning a substitute for electronic learning?

    OpenAIRE

    Sitthiworachart, Jirarat; Joy, Mike

    2008-01-01

    Mobile learning is widely regarded as the next generation of learning technologies, and refers to the use of mobile devices in education to enhance learning activities. The increasing use of mobile devices has encouraged research into the capabilities of mobile learning systems. Many questions arise about mobile learning, such as whether mobile learning can be a substitute for electronic learning, what the potential benefits and problems of utilizing mobile devices in education are, and what ...

  4. Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ying; Yang, Lin' an, E-mail: layang@xidian.edu.cn; Wang, Zhizhe; Chen, Qing; Huang, Yonghong; Dai, Yang; Chen, Haoran; Zhao, Hongliang; Hao, Yue [The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2014-09-07

    We present a numerical analysis on an ultra-short channel AlGaN/GaN HEMT-like planar Gunn diode based on the velocity-field dependence of two-dimensional electron gas (2-DEG) channel accounting for the ballistic electron acceleration and the inter-valley transfer. In particular, we propose a Schottky-ohmic composite contact instead of traditional ohmic contact for the Gunn diode in order to significantly suppress the impact ionization at the anode side and shorten the “dead zone” at the cathode side, which is beneficial to the formation and propagation of dipole domain in the ultra-short 2-DEG channel and the promotion of conversion efficiency. The influence of the surface donor-like traps on the electron domain in the 2-DEG channel is also included in the simulation.

  5. Pressure effects on electron reactions and mobility in nonpolar liquids

    International Nuclear Information System (INIS)

    Holroyd, R.A.; Nishikawa, Masaru

    2002-01-01

    High pressure studies have elucidated the mechanisms of both electron reactions and electron transport in nonpolar liquids and provided information about the partial molar volumes of ions and electrons. The very large volume changes associated with electron attachment reactions have been explained as due to electrostriction by the ions, calculated with a continuum model, but modified to include the formation of a glassy shell of solvent molecules around the ion. The mobilities of electrons in cases where the electron is trapped can now be understood by comparing the trap cavity volume with the volume of electrostriction of the solvent around the cavity. In cases where the electron is quasi-free the compressibility dependent potential fluctuations are shown to be important. The isothermal compressibility is concluded to be the single most important parameter determining the behavior of excess electrons in liquids

  6. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    International Nuclear Information System (INIS)

    Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

    2016-01-01

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f_t/f_m_a_x of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f_t/f_m_a_x of 48/60 GHz.

  7. Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

    International Nuclear Information System (INIS)

    Zhou Shu-Xing; Qi Ming; Ai Li-Kun; Xu An-Huai; Wang Li-Dan; Ding Peng; Jin Zhi

    2015-01-01

    The InGaAs/InAlAs/InP high electron mobility transistor (HEMT) structures with lattice-matched and pseudomorphic channels are grown by gas source molecular beam epitaxy. Effects of Si δ-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si δ-doping concentration (N_d) is about 5.0 × 10"1"2 cm"−"2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission electron microscopy. An InGaAs/InAlAs/InP HEMT device with a gate length of 100 nm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits f_T = 249 GHz and f_m_a_x > 400 GHz. (paper)

  8. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    Science.gov (United States)

    Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

    2016-08-01

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

  9. Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

    Science.gov (United States)

    Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu

    2017-10-01

    To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I D-V G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.

  10. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J. [Naval Research Laboratory, Electronics Science and Technology Division, Washington, DC 20375 (United States)

    2016-08-08

    A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.

  11. Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Trier, Felix; Kasama, Takeshi

    2015-01-01

    The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Rem...

  12. Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

    International Nuclear Information System (INIS)

    Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

    2005-01-01

    AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

  13. Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance.

    Science.gov (United States)

    Khan, Mansoor Ali; Heo, Jun-Woo; Kim, Hyun-Seok; Park, Hyun-Chang

    2014-11-01

    In this work, different gate-head structures have been compared in the context of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). Field-plate (FP) technology self-aligned to the gate electrode leads to various gate-head structures, most likely gamma (γF)-gate, camel (see symbol)-gate, and mushroom-shaped (T)-gate. In-depth comparison of recessed gate-head structures demonstrated that key performance metrics such as transconductance, output current, and breakdown voltage are better with the T-gate head structure. The recessed T-gate with its one arm toward the source side not only reduces the source-access resistance (R(g) +R(gs)), but also minimizes the source-side dispersion and current leakage, resulting in high transconductance (G(m)) and output current (I(DS)). At the same time, the other arm toward the drain-side reduces the drain-side dispersion and tends to distribute electric field peaks uniformly, resulting in high breakdown voltage (V(BR)). DC and RF analysis showed that the recessed T-gate FP-HEMT is a suitable candidate not only for high-frequency operation, but also for high-power applications.

  14. Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal—insulator—semiconductor high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Tian Ben-Lang; Chen Chao; Li Yan-Rong; Zhang Wan-Li; Liu Xing-Zhao

    2012-01-01

    Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al 2 O 3 as the precursors. The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous. The binding energy and composition of the deposited thin film, obtained from the X-ray photoelectron spectroscopy (XPS) measurement, are consistent with those of SBA. The dielectric constant of the SBA thin film is about 50. Each of the capacitance—voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN. The interface trap density of metal—insulator—semiconductor high-electron-mobility transistor (MISHEMT) is measured to be (3.5∼9.5)×10 10 cm −2 ·eV −1 by the conductance method. The fixed charge density of SBA dielectric is on the order of 2.7×10 12 cm −2 . Compared with the AlGaN/GaN metal—semiconductor heterostructure high-electron-mobility transistor (MESHEMT), the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However, the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from −5.5 V to −3.5 V. From XPS results, the surface valence-band maximum (VBM-EF) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition. The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF), the reduction of interface traps and the effects of sodium ions, and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG). (condensed matter: structural, mechanical, and thermal properties)

  15. AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.

    Science.gov (United States)

    Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

    2017-12-01

    We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2 -based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H 2 /NH 3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

  16. AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I.-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

    2017-04-01

    We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias ( V DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage ( V th), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

  17. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  18. Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

    Science.gov (United States)

    Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

    2018-04-01

    A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length.

  19. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    Science.gov (United States)

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

    2015-01-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

  20. Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

    International Nuclear Information System (INIS)

    Zhang Guang-Chen; Feng Shi-Wei; Zhou Zhou; Li Jing-Wan; Guo Chun-Sheng

    2011-01-01

    The evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistor (HEMT) by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the AlGaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger AlGaN/GaN HEMT with 400-μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged AlGaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip-level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors

    Science.gov (United States)

    Takhar, Kuldeep; Meer, Mudassar; Upadhyay, Bhanu B.; Ganguly, Swaroop; Saha, Dipankar

    2017-05-01

    We have demonstrated that a thin layer of Al2O3 grown by wet-oxidation of wet-recessed AlGaN barrier layer in an AlGaN/GaN heterostructure can significantly improve the performance of GaN based high electron mobility transistors (HEMTs). The wet-etching leads to a damage free recession of the gate region and compensates for the decreased gate capacitance and increased gate leakage. The performance improvement is manifested as an increase in the saturation drain current, transconductance, and unity current gain frequency (fT). This is further augmented with a large decrease in the subthreshold current. The performance improvement is primarily ascribed to an increase in the effective velocity in two-dimensional electron gas without sacrificing gate capacitance, which make the wet-recessed gate oxide-HEMTs much more scalable in comparison to their conventional counterpart. The improved scalability leads to an increase in the product of unity current gain frequency and gate length (fT × Lg).

  2. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

    Science.gov (United States)

    Arehart, A. R.; Sasikumar, A.; Rajan, S.; Via, G. D.; Poling, B.; Winningham, B.; Heller, E. R.; Brown, D.; Pei, Y.; Recht, F.; Mishra, U. K.; Ringel, S. A.

    2013-02-01

    This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) through increased concentration of a specific electron trap at EC-0.57 eV that is located in the drain access region, as a function of accelerated life testing (ALT). The trap is detected by constant drain current deep level transient spectroscopy (CID-DLTS) and the CID-DLTS thermal emission time constant precisely matches the measured drain lag. Both drain lag and CID-DLTS measurements show this state to already exist in pre-stressed devices, which coupled with its strong increase in concentration as a function of stress in the absence of significant increases in concentrations of other detected traps, imply its role in causing degradation, in particular knee walkout. This study reveals EC-0.57 eV trap concentration tracks degradation induced by ALT for MOCVD-grown HEMTs supplied by several commercial and university sources. The results suggest this defect has a common source and may be a key degradation pathway in AlGaN/GaN HEMTs and/or an indicator to predict device lifetime.

  3. Electron mobility enhancement in (100) oxygen-inserted silicon channel

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Nuo; King Liu, Tsu-Jae [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States); Takeuchi, Hideki; Hytha, Marek; Cody, Nyles W.; Stephenson, Robert J.; Mears, Robert J. [Mears Technologies, Inc., Wellesley Hills, Massachusetts 02481 (United States); Kwak, Byungil; Cha, Seon Yong [SK Hynix, Icheon-si, Gyeonggi-do 467-701 (Korea, Republic of)

    2015-09-21

    High performance improvement (+88% in peak G{sub m} and >30% in linear and saturation region drain currents) was observed for N-MOSFETs with Oxygen-Inserted (OI) Si channel. From TCAD analysis of the C-V measurement data, the improvement was confirmed to be due to electron mobility enhancement of the OI Si channel (+75% at N{sub inv} = 4.0 × 10{sup 12} cm{sup −2} and +25% at N{sub inv} = 8.0 × 10{sup 12} cm{sup −2}). Raman and high-resolution Rutherford backscattering measurements confirmed that negligible strain is induced in the OI Si layer, and hence, it cannot be used to explain the origin of mobility improvement. Poisson-Schrödinger based quantum mechanical simulation was performed, taking into account phonon, surface roughness and Coulomb scatterings. The OI layer was modeled as a “quasi barrier” region with reference to the Si conduction band edge to confine inversion electrons. Simulation explains the measured electron mobility enhancement as the confinement effect of inversion electrons while the formation of an super-steep retrograde well doping profile in the channel (as a result of dopant diffusion blocking effect accompanied by introduction of the OI layer) also contributes 50%–60% of the mobility improvement.

  4. Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

    2007-01-01

    Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

  5. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    Energy Technology Data Exchange (ETDEWEB)

    Anand, M. J., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Ng, G. I., E-mail: anand2@e.ntu.edu.sg, E-mail: eging@ntu.edu.sg; Syamal, B.; Zhou, X. [School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C. [Temasek Laboratories@NTU, Nanyang Technological University, 50 Nanyang Drive, Research Techno Plaza, Singapore 637553 (Singapore)

    2015-02-23

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-R{sub DS[ON]}) and threshold-voltage shift (ΔV{sub th}) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I{sub DS}-V{sub DS}) and drain current (I{sub D}) transients. Different EF was realized with devices of different gate-drain spacing (L{sub gd}) under the same OFF-state stress. Under high-EF (L{sub gd} = 2 μm), the devices exhibited higher dyn-R{sub DS[ON]} degradation but a small ΔV{sub th} (∼120 mV). However, at low-EF (L{sub gd} = 5 μm), smaller dyn-R{sub DS[ON]} degradation but a larger ΔV{sub th} (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R{sub DS[ON]} degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV{sub th}. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I{sub D}-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  6. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    International Nuclear Information System (INIS)

    Anand, M. J.; Ng, G. I.; Syamal, B.; Zhou, X.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.

    2015-01-01

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON] ) and threshold-voltage shift (ΔV th ) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I DS -V DS ) and drain current (I D ) transients. Different EF was realized with devices of different gate-drain spacing (L gd ) under the same OFF-state stress. Under high-EF (L gd  = 2 μm), the devices exhibited higher dyn-R DS[ON] degradation but a small ΔV th (∼120 mV). However, at low-EF (L gd  = 5 μm), smaller dyn-R DS[ON] degradation but a larger ΔV th (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R DS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV th . A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I D -transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations

  7. Thermal electron mobilities in low density gaseous mixtures

    International Nuclear Information System (INIS)

    Dmitriev, O.W.; Tchorzewska, W.; Szamrej, I.; Forys, M.

    1992-01-01

    A new method of obtaining thermal electron mobilities from experimental dependencies observed in the electron swarm is described; the method is suitable for both electron accepting and non-accepting systems. The electron mobilities for CO 2 , CH 4 C 2 H 6 as well as for N 2 , Ar, Xe, Kr and their mixtures with carbon dioxide are obtained. (Author)

  8. Temperature Effects on The Electrical Characteristics of In0.15Ga0.85As Pseudomorphic High-Electron-Mobility Transistors

    Directory of Open Access Journals (Sweden)

    BECHLAGHEM Fatima Zohra

    2017-10-01

    Full Text Available Nowadays, GaAs-based HEMTs and pseudomorphic HEMTs are speedily replacing conventional MESFET technology in military and commercial applications including, communication, radar and automotive technologies having need of high gain, and low noise figures especially at millimeter-wave frequencies. In this work, a short gate length pseudomorphic HEMT "p-HEMT" on GaAs substrate is treated. As temperature dependence study is a very important part of the complete characterization on active devices, the impact of temperature variation on the electrical properties of our 30nm short gate length pseudomorphic high-electron mobility In0.15Ga0.85As device is investigated. All our static DC device characteristics and RF response have been obtained using a device simulator that is Silvaco software to examine temperature impact on our device output current, transconductance and cutoff frequency. The 30nm gate pseudomorphic HEMT reported here exhibit superior DC and RF performances, Our results reveals a maximum drain-source current IDS up to 537.16 mA/mm, a peak extrinsic transconductance Gm of 345.4 mS/mm, a cutoff frequency Ft of 285.9 GHz, and a maximum frequency Fmax of 1580 GHz at room temperature.

  9. Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures

    Science.gov (United States)

    Yang, Jiancheng; Carey, Patrick; Ren, Fan; Wang, Yu-Lin; Good, Michael L.; Jang, Soohwan; Mastro, Michael A.; Pearton, S. J.

    2017-11-01

    We report a comparison of two different approaches to detecting cardiac troponin I (cTnI) using antibody-functionalized AlGaN/GaN High Electron Mobility Transistors (HEMTs). If the solution containing the biomarker has high ionic strength, there can be difficulty in detection due to charge-screening effects. To overcome this, in the first approach, we used a recently developed method involving pulsed biases applied between a separate functionalized electrode and the gate of the HEMT. The resulting electrical double layer produces charge changes which are correlated with the concentration of the cTnI biomarker. The second approach fabricates the sensing area on a glass slide, and the pulsed gate signal is externally connected to the nitride HEMT. This produces a larger integrated change in charge and can be used over a broader range of concentrations without suffering from charge-screening effects. Both approaches can detect cTnI at levels down to 0.01 ng/ml. The glass slide approach is attractive for inexpensive cartridge-type sensors.

  10. Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

    Science.gov (United States)

    Cörekçi, S; Usanmaz, D; Tekeli, Z; Cakmak, M; Ozçelik, S; Ozbay, E

    2008-02-01

    We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100-250 nm. The typical rms values of HEMT structures were found as 0.27, 0.30, and 0.70 nm. HT-AIN buffer layer can have a significant impact on the surface morphology of Al0.3Ga0.7N/Al2O3-HEMT structures.

  11. Direct label-free electrical immunodetection of transplant rejection protein biomarker in physiological buffer using floating gate AlGaN/GaN high electron mobility transistors.

    Science.gov (United States)

    Tulip, Fahmida S; Eteshola, Edward; Desai, Suchita; Mostafa, Salwa; Roopa, Subramanian; Evans, Boyd; Islam, Syed Kamrul

    2014-06-01

    Monokine induced by interferon gamma (MIG/CXCL9) is used as an immune biomarker for early monitoring of transplant or allograft rejection. This paper demonstrates a direct electrical, label-free detection method of recombinant human MIG with anti-MIG IgG molecules in physiologically relevant buffer environment. The sensor platform used is a biologically modified GaN-based high electron mobility transistor (HEMT) device. Biomolecular recognition capability was provided by using high affinity anti-MIG monoclonal antibody to form molecular affinity interface receptors on short N-hydroxysuccinimide-ester functionalized disulphide (DSP) self-assembled monolayers (SAMs) on the gold sensing gate of the HEMT device. A floating gate configuration has been adopted to eliminate the influences of external gate voltage. Preliminary test results with the proposed chemically treated GaN HEMT biosensor show that MIG can be detected for a wide range of concentration varying from 5 ng/mL to 500 ng/mL.

  12. Analytical admittance characterization of high mobility channel

    Energy Technology Data Exchange (ETDEWEB)

    Mammeri, A. M.; Mahi, F. Z., E-mail: fati-zo-mahi2002@yahoo.fr [Institute of Science and Technology, University of Bechar (Algeria); Varani, L. [Institute of Electronics of the South (IES - CNRS UMR 5214), University of Montpellier (France)

    2015-03-30

    In this contribution, we investigate the small-signal admittance of the high electron mobility transistors field-effect channels under a continuation branching of the current between channel and gate by using an analytical model. The analytical approach takes into account the linearization of the 2D Poisson equation and the drift current along the channel. The analytical equations discuss the frequency dependence of the admittance at source and drain terminals on the geometrical transistor parameters.

  13. Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

    Science.gov (United States)

    Sharma, N; Periasamy, C; Chaturvedi, N

    2018-07-01

    In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

  14. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan [imec, Kapeldreef 75, 3001 Leuven (Belgium); Bakeroot, Benoit [imec, Kapeldreef 75, 3001 Leuven (Belgium); Centre for Microsystems Technology, Ghent University, 9052 Gent (Belgium); Roelofs, Robin [ASM, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  15. Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

    2013-01-01

    The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

  16. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May, E-mail: eekmlau@ust.hk [Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  17. Interaction of microwave radiation with the high mobility two-dimensional electron system in GaAs/AlGaAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ramanayaka, A.N.; Ye, Tianyu; Liu, H.-C. [Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (United States); Wegscheider, W. [Laboratorium fuer Festkoerperphysik, ETH Zurich, 8093 Zurich (Switzerland); Mani, R.G., E-mail: rmani@gsu.edu [Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (United States)

    2014-11-15

    The influence of microwave excitation on the magnetotransport properties of the high mobility two-dimensional electron system (2DES) in the GaAs/AlGaAs heterostructure system is investigated by exploring (a) the dependence of the amplitude of the microwave-induced magnetoresistance-oscillations on the polarization direction of the linearly polarized microwaves and (b) the microwave reflection from the 2DES. The polarization study indicates that the amplitude of the magnetoresistance oscillations is remarkably responsive to the relative orientation between the linearly polarized microwaves and the current-axis in the specimen. At low microwave power, P, experiments indicate a strong sinusoidal variation in the diagonal resistance R{sub xx} vs. θ at the oscillatory extrema of the microwave-induced magnetoresistance oscillations. The reflection study indicates strong correlations between the microwave induced magnetoresistance oscillations and oscillatory features in the microwave reflection in a concurrent measurement of the magnetoresistance and the microwave magnetoreflection from the 2DES. The correlations are followed as a function of the microwave frequency and the microwave power, and the results are reported.

  18. Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Zhao Sheng-Lei; Yue Tong; Wang Yi; Luo Jun; Mao Wei; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei

    2013-01-01

    In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage V BR is saturated at 1085 V for gate—drain spacing L GD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with L GD = 10 μm. For the length of the drain FP L DF ≤ 2 μm, V BR is almost kept at 1085 V, showing no degradation. When L DF exceeds 2 μm, V BR decreases obviously as L DF increases. Moreover, the larger the L DF , the larger the decrease of V BR . It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the L GD at which V BR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of V BR

  19. pH sensor using AlGaN/GaN high electron mobility transistors with Sc2O3 in the gate region

    International Nuclear Information System (INIS)

    Kang, B. S.; Wang, H. T.; Ren, F.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

    2007-01-01

    Ungated AlGaN/GaN high electron mobility transistors (HEMTs) exhibit large changes in current upon exposing the gate region to polar liquids. The polar nature of the electrolyte introduced leds to a change of surface charges, producing a change in surface potential at the semiconductor/liquid interface. The use of Sc 2 O 3 gate dielectric produced superior results to either a native oxide or UV ozone-induced oxide in the gate region. The ungated HEMTs with Sc 2 O 3 in the gate region exhibited a linear change in current between pH 3 and 10 of 37 μA/pH. The HEMT pH sensors show stable operation with a resolution of <0.1 pH over the entire pH range. The results indicate that the HEMTs may have application in monitoring pH solution changes between 7 and 8, the range of interest for testing human blood

  20. Effects of silicon-nitride passivation on the electrical behavior of 0.1-μm pseudomorphic high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Oh, Jung-Hun; Sul, Woo-Suk; Han, Hyo-Jong; Jang, Hae-Kang; Son, Myung-Sik; Rhee, Jin-Koo; Kim, Sam- Dong

    2004-01-01

    We examine the effects of surface state formation due to silicon-nitride passivation on the electrical characteristics of GaAs-based 0.1-μm pseudomorphic high-electron-mobility transistors (pHEMTs). In this study, DC and noise characteristic are investigated before and after the passivation of the pHEMTs. After the passivation, we observe significant degradation of noise performance in the frequency range of 55 - 62 GHz. We also observe clear increases in the drain-source saturation current at a gate voltage of 0 V and in the extrinsic transconductance at a drain voltage of 1 V from 325 and 264 to 365 mA/mm and 304 mS/mm, respectively, with no significant variation in pinchoff voltage. We propose that the observed variations in the DC and the noise characteristics are due to the positively charged surface state after deposition of the silicon nitride passivation film. Hydrodynamic device model simulations were performed based upon the proposed mechanisms for the change in electrical behavior, and the calculated results show good agreement with the experimental results.

  1. Interaction of microwave radiation with the high mobility two-dimensional electron system in GaAs/AlGaAs heterostructures

    International Nuclear Information System (INIS)

    Ramanayaka, A.N.; Ye, Tianyu; Liu, H.-C.; Wegscheider, W.; Mani, R.G.

    2014-01-01

    The influence of microwave excitation on the magnetotransport properties of the high mobility two-dimensional electron system (2DES) in the GaAs/AlGaAs heterostructure system is investigated by exploring (a) the dependence of the amplitude of the microwave-induced magnetoresistance-oscillations on the polarization direction of the linearly polarized microwaves and (b) the microwave reflection from the 2DES. The polarization study indicates that the amplitude of the magnetoresistance oscillations is remarkably responsive to the relative orientation between the linearly polarized microwaves and the current-axis in the specimen. At low microwave power, P, experiments indicate a strong sinusoidal variation in the diagonal resistance R xx vs. θ at the oscillatory extrema of the microwave-induced magnetoresistance oscillations. The reflection study indicates strong correlations between the microwave induced magnetoresistance oscillations and oscillatory features in the microwave reflection in a concurrent measurement of the magnetoresistance and the microwave magnetoreflection from the 2DES. The correlations are followed as a function of the microwave frequency and the microwave power, and the results are reported

  2. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    Science.gov (United States)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  3. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-01-01

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme

  4. Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor

    International Nuclear Information System (INIS)

    Chen, Li-Yang; Tsai, Tsung-Han; Chen, Tzu-Pin; Liu, Yi-Chun; Liu, Wen-Chau; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng

    2008-01-01

    The reliability-related properties of an InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), using the non-annealed ohmic-recess (NAOR) approach, are studied and demonstrated. The NAOR device shows significantly improved dc and radio frequency (RF) performance over a wide temperature range (300–500 K). With a 1 × 100 µm 2 gate-dimension MHEMT by the NAOR approach, the considerably improved thermal stability and dc performances, including lower temperature variation coefficients on turn-on voltage (−1.38 mV K −1 ) and gate-drain breakdown voltage (−30.4 mV K −1 ), and on-resistance (2.41 × 10 −3 Ω mm K −1 ), are obtained as the temperature is increased from 300 to 500 K. For RF characteristics, the NAOR device also shows a low degradation rate on drain saturation current operating regimes (−5.52 × 10 −4 K −1 ) as the temperature is increased from 300 to 400 K. In addition, based on the lifetime tests, an activation energy of 1.33 eV and a projected median lifetime of 1.2 × 10 7 h at T ch = 125 °C are obtained for the NAOR MHEMT

  5. Study of SiN{sub x}:H{sub y} passivant layers for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Redondo-Cubero, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Gago, R. [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Romero, M.F.; Gonzalez-Posada, F.; Brana, A.F.; Munoz, E. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Jimenez, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Dpto. Electronica, Escuela Politecnica, Universidad de Alcala, 28805 Alcala de Henares (Spain)

    2008-07-01

    In this work, hydrogenated silicon nitride (SiN{sub x}:H{sub y}) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and X-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH{sub 4}/N{sub 2} and SiH{sub 4}/NH{sub 3}) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

    Science.gov (United States)

    Zhang, Zhili; Song, Liang; Li, Weiyi; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Fan, Yaming; Deng, Xuguang; Li, Shuiming; Sun, Shichuang; Li, Xiajun; Yuan, Jie; Sun, Qian; Dong, Zhihua; Cai, Yong; Zhang, Baoshun

    2017-08-01

    In this paper, we systematically investigated the leakage mechanism of the ion-implantation isolated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrate. By means of combined DC tests at different temperatures and electric field dependence, we demonstrated the following original results: (1) It is proved that gate leakage is the main contribution to OFF-state leakage of ion-implantation isolated AlGaN/GaN MIS-HEMTs, and the gate leakage path is a series connection of the gate dielectric Si3N4 and Si3N4-GaN interface. (2) The dominant mechanisms of the leakage current through LPCVD-Si3N4 gate dielectric and Si3N4-GaN interface are identified to be Frenkel-Poole emission and two-dimensional variable range hopping (2D-VRH), respectively. (3) A certain temperature annealing could reduce the density of the interface state that produced by ion implantation, and consequently suppress the interface leakage transport, which results in a decrease in OFF-state leakage current of ion-implantation isolated AlGaN/GaN MIS-HEMTs.

  7. Investigation on pseudomorphic InGaAs/InAlAs/InP High Electron Mobility Transistors with regard to cryogenic applications

    International Nuclear Information System (INIS)

    Toennesmann, A.

    2003-03-01

    A wide variety of new data communication applications demand ever-increasing transmission capacities. The InGaAs/InAlAs/InP layer stack based high electron mobility transistor (HEMT) is currently regarded as the most promising active device in communication systems as it has the highest cut-off frequencies of all transistor types. Due to reduced phonon scattering of the charge carriers, the HEMT is expected to exhibit even better noise and high frequency characteristics for operations at cryogenic temperatures, for instance in mixers or oscillators located in satellites or ground based systems with appropriate cooling equipment. This work focuses on the reduction of access resistances and the fabrication of very short gate lengths as the biggest technological challenges realizing highest cut-off frequencies at any temperature. In addition, the reproducibility and robustness of the implemented gate technologies are fundamental criteria for applications. In comparison to other transistor designs, the InAlAs/InGaAs HEMTs are stronger affected by undesirable, partly material dependent, short channel effects like early breakdown, high gate currents, impact ionization, the kink effect, and a shift in the threshold voltage. Measurements at liquid nitrogen temperature on transistors produced in this work provide further insight into the poorly understood interrelationship between these effects. At liquid nitrogen temperature, the cut-off frequency of 180 GHz and the maximum oscillation frequency of 300 GHz of short channel transistors at room temperature increase by 20% and 30%, respectively, while the breakdown voltage remains at high values above 8 V. (orig.)

  8. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kyle, Erin C. H., E-mail: erinkyle@umail.ucsb.edu; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wu, Yuh-Renn [Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan (China)

    2014-05-21

    The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimized GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.

  9. 76 FR 24051 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Mobile Tablets, Portable...

    Science.gov (United States)

    2011-04-29

    ..., Including Mobile Phones, Mobile Tablets, Portable Music Players, and Computers, and Components Thereof... certain electronic devices, including mobile phones, mobile tablets, portable music players, and computers...''). The complaint further alleges that an industry in the United States exists or is in the process of...

  10. High brightness electron accelerator

    International Nuclear Information System (INIS)

    Sheffield, R.L.; Carlsten, B.E.; Young, L.M.

    1994-01-01

    A compact high brightness linear accelerator is provided for use, e.g., in a free electron laser. The accelerator has a first plurality of accelerating cavities having end walls with four coupling slots for accelerating electrons to high velocities in the absence of quadrupole fields. A second plurality of cavities receives the high velocity electrons for further acceleration, where each of the second cavities has end walls with two coupling slots for acceleration in the absence of dipole fields. The accelerator also includes a first cavity with an extended length to provide for phase matching the electron beam along the accelerating cavities. A solenoid is provided about the photocathode that emits the electrons, where the solenoid is configured to provide a substantially uniform magnetic field over the photocathode surface to minimize emittance of the electrons as the electrons enter the first cavity. 5 figs

  11. Intrinsic mobility limit for anisotropic electron transport in Alq3.

    Science.gov (United States)

    Drew, A J; Pratt, F L; Hoppler, J; Schulz, L; Malik-Kumar, V; Morley, N A; Desai, P; Shakya, P; Kreouzis, T; Gillin, W P; Kim, K W; Dubroka, A; Scheuermann, R

    2008-03-21

    Muon spin relaxation has been used to probe the charge carrier motion in the molecular conductor Alq3 (tris[8-hydroxy-quinoline] aluminum). At 290 K, the magnetic field dependence of the muon spin relaxation corresponds to that expected for highly anisotropic intermolecular electron hopping. Intermolecular mobility in the fast hopping direction has been found to be 0.23+/-0.03 cm2 V-1 s(-1) in the absence of an electric- field gradient, increasing to 0.32+/-0.06 cm2 V-1 s(-1) in an electric field gradient of 1 MV m(-1). These intrinsic mobility values provide an estimate of the upper limit for mobility achievable in bulk material.

  12. Electronic Payments using Mobile Communication Devices

    NARCIS (Netherlands)

    Waaij, B.D. van der; Siljee, B.I.J.; Broekhuijsen, B.J.; Ponsioen, C.; Maas, A.; Aten, R.M.; Hoepman, J.H.; Loon, J.H. van; Smit, M.

    2009-01-01

    A method of making a payment uses a first mobile communication device (1) and a second mobile communication device (2), each mobile communication device being provided with a respective near field communication unit (11, 21) and at least one of the mobile communication devices being provided with an

  13. Effects of Si3N4 passivation on the dc and RF characteristics of metamorphic high-electron-mobility transistors depending on the gate-recess structures

    International Nuclear Information System (INIS)

    Oh, J H; Han, M; Baek, Y H; Moon, S W; Rhee, J K; Kim, S D

    2009-01-01

    Effects of the Si 3 N 4 passivation on the dc and RF characteristics of a 0.1 µm metamorphic high-electron-mobility transistor (HEMT) are investigated for narrow and wide gate-recess structures. Maximum drain-source saturation current (I dss,max ) and maximum extrinsic transconductance (g m,max ) are reduced by ∼14.8 and ∼11.6%, respectively, in the wide gate-recess structure after the passivation; on the other hand, only ∼5.7 and ∼4.9% reductions are measured from I dss,max and g m,max , respectively, in the narrow gate-recess structure. We examine the passivation-induced degradation by using a modified charge control model assuming the charged surface states on the Si 3 N 4 interface and a comparative study of the hydrodynamic device simulation with the experimental measurement. From the analysis, it is proposed that the difference of degradation in two different gate structures is due to an approximately three times higher charged surface state density of ∼4.5 × 10 11 cm −2 in the wide gate-recess structure than ∼1.6 × 10 11 cm −2 in the narrow gate-recess structure. The cut-off frequency (f T ) of the wide gate-recess structure also exhibits a greater reduction of ∼14.5%, while the f T of the narrow gate-recess structure is reduced by only ∼6.6% after the passivation. This is mainly due to the passivation-induced surface states of a higher density in the wide gate-recess structure. A great increase of the gate-to-drain parasitic capacitance in the wide gate-recess structure makes a major contribution to ∼13.5% degradation of the maximum frequency of oscillation

  14. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.

    Science.gov (United States)

    Chu, Byung Hwan; Kang, Byoung Sam; Hung, Sheng Chun; Chen, Ke Hung; Ren, Fan; Sciullo, Andrew; Gila, Brent P; Pearton, Stephen J

    2010-01-01

    Immobilized aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) have shown great potential in the areas of pH, chloride ion, and glucose detection in exhaled breath condensate (EBC). HEMT sensors can be integrated into a wireless data transmission system that allows for remote monitoring. This technology offers the possibility of using AlGaN/GaN HEMTs for extended investigations of airway pathology of detecting glucose in EBC without the need for clinical visits. HEMT structures, consisting of a 3-microm-thick undoped GaN buffer, 30-A-thick Al(0.3)Ga(0.7)N spacer, and 220-A-thick silicon-doped Al(0.3)Ga(0.7)N cap layer, were used for fabricating the HEMT sensors. The gate area of the pH, chloride ion, and glucose detection was immobilized with scandium oxide (Sc(2)O(3)), silver chloride (AgCl) thin film, and zinc oxide (ZnO) nanorods, respectively. The Sc(2)O(3)-gated sensor could detect the pH of solutions ranging from 3 to 10 with a resolution of approximately 0.1 pH. A chloride ion detection limit of 10(-8) M was achieved with a HEMT sensor immobilized with the AgCl thin film. The drain-source current of the ZnO nanorod-gated AlGaN/GaN HEMT sensor immobilized with glucose oxidase showed a rapid response of less than 5 seconds when the sensor was exposed to the target glucose in a buffer with a pH value of 7.4. The sensor could detect a wide range of concentrations from 0.5 nM to 125 microM. There is great promise for using HEMT-based sensors to enhance the detection sensitivity for glucose detection in EBC. Depending on the immobilized material, HEMT-based sensors can be used for sensing different materials. These electronic detection approaches with rapid response and good repeatability show potential for the investigation of airway pathology. The devices can also be integrated into a wireless data transmission system for remote monitoring applications. This sensor technology could use the exhaled breath condensate to measure the

  15. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    International Nuclear Information System (INIS)

    Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

    2015-01-01

    The authors report on Al 2 O 3 /Al 0.85 In 0.15 N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al 2 O 3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al 2 O 3 /Al 0.85 In 0.15 N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics

  16. High-power electronics

    CERN Document Server

    Kapitsa, Petr Leonidovich

    1966-01-01

    High-Power Electronics, Volume 2 presents the electronic processes in devices of the magnetron type and electromagnetic oscillations in different systems. This book explores the problems of electronic energetics.Organized into 11 chapters, this volume begins with an overview of the motion of electrons in a flat model of the magnetron, taking into account the in-phase wave and the reverse wave. This text then examines the processes of transmission of electromagnetic waves of various polarization and the wave reflection from grids made of periodically distributed infinite metal conductors. Other

  17. Innovative Mobile Platform Developments for Electronic Services Design and Delivery

    DEFF Research Database (Denmark)

    Scupola, Ada

    In the ever-growing world of technology, it is becoming more important to understand the developments of new electronic services and mobile applications. Innovative Mobile Platform Developments for Electronic Services Design, and Delivery is a comprehensive look at all aspects of production manag...

  18. Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Chang; Liao, XueYang; Li, RuGuan; Wang, YuanSheng; Chen, Yiqiang, E-mail: yiqiang-chen@hotmail.com; Su, Wei; Liu, Yuan; Wang, Li Wei; Lai, Ping; Huang, Yun; En, YunFei [Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The 5th Electronics Research Institute of the Ministry of Industry and Information Technology, 510610 Guangzhou (China)

    2015-09-28

    In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.

  19. Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L.; Ng, G. I.; Shoron, O. F.; Rajan, S.; Bin Dolmanan, S.; Tripathy, S.

    2015-01-01

    A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In 0.17 Al 0.83 N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W eff ) exhibited a very high I Dmax of 3940 mA/mm and a highest g m of 1417 mS/mm. This dramatic increase of I D and g m in the 3D TT-gate In 0.17 Al 0.83 N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v e ) of 6.0 × 10 7  cm/s, which is ∼1.89× higher than that of the conventional In 0.17 Al 0.83 N/GaN HEMT (3.17 × 10 7  cm/s). The v e in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v e at 300 K in the 3D TT-gate In 0.17 Al 0.83 N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v e  = 6 × 10 7  cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In 0.17 Al 0.83 N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications

  20. Electron velocity of 6 × 10{sup 7 }cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Arulkumaran, S., E-mail: SArulkumaran@pmail.ntu.edu.sg; Manoj Kumar, C. M.; Ranjan, K.; Teo, K. L. [Temasek Laboratories@NTU, Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553 (Singapore); Ng, G. I., E-mail: eging@ntu.edu.sg [School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Shoron, O. F.; Rajan, S. [Electrical and Computer Engineering Department, The Ohio State University, Columbus, Ohio 43210 (United States); Bin Dolmanan, S.; Tripathy, S. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore 117602 (Singapore)

    2015-02-02

    A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In{sub 0.17}Al{sub 0.83}N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W{sub eff}) exhibited a very high I{sub Dmax} of 3940 mA/mm and a highest g{sub m} of 1417 mS/mm. This dramatic increase of I{sub D} and g{sub m} in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v{sub e}) of 6.0 × 10{sup 7 }cm/s, which is ∼1.89× higher than that of the conventional In{sub 0.17}Al{sub 0.83}N/GaN HEMT (3.17 × 10{sup 7 }cm/s). The v{sub e} in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v{sub e} at 300 K in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v{sub e} = 6 × 10{sup 7 }cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications.

  1. Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Freedsman, J. J., E-mail: freedy54@gmail.com; Watanabe, A.; Urayama, Y. [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, T., E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-09-07

    The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

  2. Electron mobility in nonpolar liquids: the effect of molecular structure, temperature and electric field

    International Nuclear Information System (INIS)

    Schmidt, W.F.

    1977-01-01

    A survey is given on the mobility of excess electrons in liquid hydrocarbons and related compounds. It was found that the mobility is strongly influenced by the molecular structure of the liquid, by the temperature, and by the electric field strength. The mobility in hydrocarbons increases as the shape of the molecule approaches a sphere. The temperature coefficient is positive in most liquids over a limited temperature although exceptions have been observed in liquid methane. The field dependence of the mobility in high mobility liquids (>10 cm 2 V -1 s -1 ) showed a decrease of the mobility at higher field strengths while in low mobility liquids ( 2 V -1 s -1 ) it showed an increase. These results are discussed on the basis of the extended and the localized electron models. The predictions of these theories are compared with the experimental results and conclusions on the validity of the underlying assumptions are drawn. (author)

  3. Molecular beam epitaxy growth of In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

    International Nuclear Information System (INIS)

    Ihn, Soo-Ghang; Jo, Seong June; Song, Jong-In

    2006-01-01

    We investigated the effects of high temperature (∼700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and δ-doping layers of an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties

  4. Electron-electron scattering and mobilities in semiconductors and quantum wells

    International Nuclear Information System (INIS)

    Lyo, S.K.

    1986-01-01

    The effect of electron-electron scattering on the mobility in semiconductors and semiconductor quantum wells is examined. A general exact formula is derived for the mobility, when the electron-electron collision rate is much faster than other scattering rates such as those by ionized impurities and phonons. In this limit, the transport relaxation rate is independent of the carrier's energy and contributions to the inverse mobility from individual scattering mechanism add up. The mobility becomes significantly reduced from its value in the absence of electron-electron scattering. When the collision rates are not necessarily dominated by electron-electron scattering, the mobility is calculated by the Kohler-Sondheimer variational method in the presence of ionized-impurity scattering and acoustic-phonon scattering in a nondegenerate two-dimensional quantum well

  5. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    International Nuclear Information System (INIS)

    Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F.

    2014-01-01

    This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

  6. Theoretical interpretation of the electron mobility behavior in InAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A.; Tienda-Luna, I. M.; Martínez-Blanque, C.; Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-11-07

    This work studies the electron mobility in InAs nanowires (NWs), by solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation. The numerical solver takes into account the contribution of the main scattering mechanisms present in III-V compound semiconductors. It is validated against experimental field effect-mobility results, showing a very good agreement. The mobility dependence on the nanowire diameter and carrier density is analyzed. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility behavior. Finally, we explain the origin of the oscillations observed in the mobility of small NWs at high electric fields.

  7. Lead Halide Perovskites as Charge Generation Layers for Electron Mobility Measurement in Organic Semiconductors.

    Science.gov (United States)

    Love, John A; Feuerstein, Markus; Wolff, Christian M; Facchetti, Antonio; Neher, Dieter

    2017-12-06

    Hybrid lead halide perovskites are introduced as charge generation layers (CGLs) for the accurate determination of electron mobilities in thin organic semiconductors. Such hybrid perovskites have become a widely studied photovoltaic material in their own right, for their high efficiencies, ease of processing from solution, strong absorption, and efficient photogeneration of charge. Time-of-flight (ToF) measurements on bilayer samples consisting of the perovskite CGL and an organic semiconductor layer of different thickness are shown to be determined by the carrier motion through the organic material, consistent with the much higher charge carrier mobility in the perovskite. Together with the efficient photon-to-electron conversion in the perovskite, this high mobility imbalance enables electron-only mobility measurement on relatively thin application-relevant organic films, which would not be possible with traditional ToF measurements. This architecture enables electron-selective mobility measurements in single components as well as bulk-heterojunction films as demonstrated in the prototypical polymer/fullerene blends. To further demonstrate the potential of this approach, electron mobilities were measured as a function of electric field and temperature in an only 127 nm thick layer of a prototypical electron-transporting perylene diimide-based polymer, and found to be consistent with an exponential trap distribution of ca. 60 meV. Our study furthermore highlights the importance of high mobility charge transporting layers when designing perovskite solar cells.

  8. High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors.

    Science.gov (United States)

    Sarangadharan, Indu; Regmi, Abiral; Chen, Yen-Wen; Hsu, Chen-Pin; Chen, Pei-Chi; Chang, Wen-Hsin; Lee, Geng-Yen; Chyi, Jen-Inn; Shiesh, Shu-Chu; Lee, Gwo-Bin; Wang, Yu-Lin

    2018-02-15

    In this study, we report the development of a high sensitivity assay for the detection of cardiac troponin I using electrical double layer gated high field AlGaN/GaN HEMT biosensor. The unique gating mechanism overcomes the drawback of charge screening seen in traditional FET based biosensors, allowing detection of target proteins in physiological solutions without sample processing steps. Troponin I specific antibody and aptamer are used as receptors. The tests carried out using purified protein solution and clinical serum samples depict high sensitivity, specificity and wide dynamic range (0.006-148ng/mL). No additional wash or sample pre-treatment steps are required, which greatly simplifies the biosensor system. The miniaturized HEMT chip is packaged in a polymer substrate and easily integrated with a portable measurement unit, to carry out quantitative troponin I detection in serum samples with < 2µl sample volume in 5min. The integrated prototype biosensor unit demonstrates the potential of the method as a rapid, inexpensive, high sensitivity CVD biomarker assay. The highly simplified protocols and enhanced sensor performance make our biosensor an ideal choice for point of care diagnostics and personal healthcare systems. Copyright © 2017 Elsevier B.V. All rights reserved.

  9. Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

    International Nuclear Information System (INIS)

    Lin, Ray-Ming; Chu, Fu-Chuan; Das, Atanu; Liao, Sheng-Yu; Chou, Shu-Tsun; Chang, Liann-Be

    2013-01-01

    In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance superior to that of a conventional HEMT. Under similar bias conditions, the gate leakage currents of these MOS–HEMT devices were four orders of magnitude lower than those of conventional Schottky gate HEMTs. The measured sub-threshold swing (SS) and the effective trap state density (N t ) of the MOS–HEMT were 125 mV/decade and 4.3 × 10 12 cm −2 , respectively. The dielectric constant of the Er 2 O 3 layer in this study was 14, as determined through capacitance–voltage measurements. In addition, the gate–source reverse breakdown voltage increased from –166 V for the conventional HEMT to –196 V for the Er 2 O 3 MOS–HEMT. - Highlights: ► GaN/AlGaN/Er 2 O 3 metal-oxide semiconductor high electron mobility transistor ► Physical and electrical characteristics are presented. ► Electron beam evaporated Er 2 O 3 with excellent surface roughness ► Device exhibits reduced gate leakage current and improved I ON /I OFF ratio

  10. The Future of the Mobile Payment as Electronic Payment System

    OpenAIRE

    Bezovski, Zlatko

    2016-01-01

    The development of the Internet and the arrival of e-commerce fostered digitalization in the payment processes by providing a variety of electronic payment options including payment cards (credit and debit), digital and mobile wallets, electronic cash, contactless payment methods etc. Mobile payment services with their increasing popularity are presently under the phase of transition, heading towards a promising future of tentative possibilities along with the innovation in technology. In thi...

  11. Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

    International Nuclear Information System (INIS)

    Perozek, J; Lee, H-P; Bayram, C; Krishnan, B; Paranjpe, A; Reuter, K B; Sadana, D K

    2017-01-01

    An AlGaN/GaN high electron mobility transistor (HEMT) structure is grown on a 200 mm Si(1 1 1) substrate. The AlGaN/AlN/GaN heterostructure atop, which forms the 2D electron gas, is studied via transmission electron microscopy (TEM), scanning tunneling microscopy, and TEM chemical analysis. To quantify the uniformity of structural, optical, and electrical properties of these AlGaN/GaN HEMT structures, scanning electron microscopy, optical microscopy, atomic-force microscopy, x-ray diffraction ( ω /2 θ scan and reciprocal space mapping) and Hall effect measurements are employed across the center, middle, and edge of the 200 mm wafer. Small thickness (<3%) and Al-content (<3%) variations in (Al)GaN layers across the wafer are recorded whereas a considerable change (28%) in the electron mobility is observed across the wafer that correlates with variations in surface roughness, defectivity, and layer stress. We attribute the higher mobility in the middle of the wafer to lower interface scattering, thanks to lower surface roughness and less edge-type dislocation density. Additionally, argon (Ar) ion implantation is used as a means for planar electrical isolation, and a seven orders of magnitude decrease in leakage current is achieved when an optimum Ar dose of 10 13 cm −2 is used. The feasibility of scaling AlGaN/GaN HEMTs on a 200 mm Si(1 1 1) platform is discussed. (paper)

  12. AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2 V-1 s-1)

    Science.gov (United States)

    Yamamoto, Akio; Makino, Shinya; Kanatani, Keito; Kuzuhara, Masaaki

    2018-04-01

    In this study, the metal-organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V-1 s-1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

  13. The unexpected beneficial effect of the L-valley population on the electron mobility of GaAs nanowires

    International Nuclear Information System (INIS)

    Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Gámiz, F.

    2015-01-01

    The impact of the L-valley population on the transport properties of GaAs cylindrical nanowires (NWs) is analyzed by numerically calculating the electron mobility under the momentum relaxation time approximation. In spite of its low contribution to the electron mobility (even for high electron populations in small NWs), it is demonstrated to have a beneficial effect, since it significantly favours the Γ-valley mobility by screening the higher Γ-valley energy subbands

  14. Materials and device characteristics of pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP high electron mobility transistors

    International Nuclear Information System (INIS)

    Ballingall, J.M.; Ho, P.; Tessmer, G.J.; Martin, P.A.; Yu, T.H.; Choa, P.C.; Smith, P.M.; Duh, K.H.G.

    1990-01-01

    High electron mobility transistors (HEMTs) with single quantum well active layers composed of pseudomorphic InGaAs grown on GaAs and InP are establishing new standards of performance for microwave and millimeter wave applications. This is due to recent progress in the molecular beam epitaxial growth of strained InGaAs heterostructures coupled with developments in short gate length (sub-0.2 μm) device fabrication technology. This paper reviews this progress and the current state-of-the-art for materials and devices

  15. Development of mobile platform integrated with existing electronic medical records.

    Science.gov (United States)

    Kim, YoungAh; Kim, Sung Soo; Kang, Simon; Kim, Kyungduk; Kim, Jun

    2014-07-01

    This paper describes a mobile Electronic Medical Record (EMR) platform designed to manage and utilize the existing EMR and mobile application with optimized resources. We structured the mEMR to reuse services of retrieval and storage in mobile app environments that have already proven to have no problem working with EMRs. A new mobile architecture-based mobile solution was developed in four steps: the construction of a server and its architecture; screen layout and storyboard making; screen user interface design and development; and a pilot test and step-by-step deployment. This mobile architecture consists of two parts, the server-side area and the client-side area. In the server-side area, it performs the roles of service management for EMR and documents and for information exchange. Furthermore, it performs menu allocation depending on user permission and automatic clinical document architecture document conversion. Currently, Severance Hospital operates an iOS-compatible mobile solution based on this mobile architecture and provides stable service without additional resources, dealing with dynamic changes of EMR templates. The proposed mobile solution should go hand in hand with the existing EMR system, and it can be a cost-effective solution if a quality EMR system is operated steadily with this solution. Thus, we expect this example to be shared with hospitals that currently plan to deploy mobile solutions.

  16. A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

    International Nuclear Information System (INIS)

    Mao Wei; She Wei-Bo; Zhang Chao; Zhang Jin-Cheng; Zhang Jin-Feng; Liu Hong-Xia; Yang Lin-An; Zhang Kai; Zhao Sheng-Lei; Chen Yong-He; Zheng Xue-Feng; Hao Yue; Yang Cui; Ma Xiao-Hua

    2014-01-01

    In this paper, we present a two-dimensional (2D) fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor (FP-HEMT) on the basis of 2D Poisson's solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, AlGaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco—Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  17. A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Bovet, N.; Trier, Felix

    2013-01-01

    The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much...

  18. High field electron linacs

    International Nuclear Information System (INIS)

    Le Duff, J.

    1985-12-01

    High field electron linacs are considered as potential candidates to provide very high energies beyond LEP. Since almost twenty years not much improvement has been made on linac technologies as they have been mostly kept at low and medium energies to be used as injectors for storage rings. Today, both their efficiency and their performances are being reconsidered, and for instance the pulse compression sheme developed at SLAC and introduced to upgrade the energy of that linac is a first step towards a new generation of linear accelerators. However this is not enough in terms of power consumption and more development is needed to improve both the efficiency of accelerating structures and the performances of RF power sources

  19. Electron attachment rate constant measurement by photoemission electron attachment ion mobility spectrometry (PE-EA-IMS)

    International Nuclear Information System (INIS)

    Su, Desheng; Niu, Wenqi; Liu, Sheng; Shen, Chengyin; Huang, Chaoqun; Wang, Hongmei; Jiang, Haihe; Chu, Yannan

    2012-01-01

    Photoemission electron attachment ion mobility spectrometry (PE-EA-IMS), with a source of photoelectrons induced by vacuum ultraviolet radiation on a metal surface, has been developed to study electron attachment reaction at atmospheric pressure using nitrogen as the buffer gas. Based on the negative ion mobility spectra, the rate constants for electron attachment to tetrachloromethane and chloroform were measured at ambient temperature as a function of the average electron energy in the range from 0.29 to 0.96 eV. The experimental results are in good agreement with the data reported in the literature. - Highlights: ► Photoemission electron attachment ion mobility spectrometry (PE-EA-IMS) was developed to study electron attachment reaction. ► The rate constants of electron attachment to CCl 4 and CHCl 3 were determined. ► The present experimental results are in good agreement with the previously reported data.

  20. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

    Science.gov (United States)

    Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

    2018-03-01

    We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

  1. Temperature dependence of electron mobility, electroluminescence and photoluminescence of Alq{sub 3} in OLED

    Energy Technology Data Exchange (ETDEWEB)

    Mu Haichuan; White, Dan; Sharpton, Buck [Office of Electronic Miniaturization, University of Alaska at Fairbanks, AK 99701 (United States); Klotzkin, David [Department of Electrical and Computer Engineering and Computer Sciences, University of Cincinnati, Cincinnati, OH 45221 (United States); De Silva, Ajith; Wagner, Hans Peter [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States)], E-mail: fnhm@uaf.edu

    2008-12-07

    The correlation of electroluminescence (EL), photoluminescence (PL) and electron mobility were investigated over temperature from 60 to 300 K in small-molecule organic light emitting diode (OLED) structures. The devices consisted of ITO/PEDOT(50 nm)/TPD(50 nm)/Alq{sub 3}(60 nm)/LiF(1 nm)/Al(90 nm), and were fabricated with high-vacuum sublimation/evaporation in a cross-linked configuration. Electron mobility was measured using an ac analysis of the device optical modulation characteristics, while PL and EL were measured by measuring optical power out at fixed pump power of 1 mW, and analysis of dc brightness-voltage (L-V) characteristics, respectively. PL intensity and mobility had a clear maximum at around 220 K, while EL efficiency was constant below 220 K and decrease monotonically above. The reason for the temperature dependent EL, PL and electron mobility behaviour will be discussed.

  2. 1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

    Science.gov (United States)

    Hou, Bin; Ma, Xiaohua; Yang, Ling; Zhu, Jiejie; Zhu, Qing; Chen, Lixiang; Mi, Minhan; Zhang, Hengshuang; Zhang, Meng; Zhang, Peng; Zhou, Xiaowei; Hao, Yue

    2017-07-01

    In this paper, a normally-off AlGaN/GaN high-electron-mobility transistors (HEMT) fabricated using inductively coupled plasma (ICP) CF4 plasma recessing and an implantation technique is reported. A gate-to-channel distance of ˜10 nm and an equivalent negative fluorine sheet charge density of -1.21 × 1013 cm-2 extracted using a simple threshold voltage (V th) analytical model result in a high V th of 1.5 V, a peak transconductance of 356 mS/mm, and a subthreshold slope of 133 mV/decade. A small degradation of channel mobility leads to a high RF performance with f T/f max of 41/125 GHz, resulting in a record high f T × L g product of 10.66 GHz·µm among Schottky barrier AlGaN/GaN normally-off HEMTs with V th exceeding 1 V, to the best of our knowledge.

  3. Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings

    Science.gov (United States)

    Hoshino, Tomoki; Mori, Nobuya

    2018-04-01

    InGaN has a smaller electron effective mass and is expected to be used as a channel material for high-electron-mobility transistors. However, it is an alloy semiconductor with a random distribution of atoms, which introduces additional scattering mechanisms: alloy disorder and random dipole scatterings. In this work, we calculate the electron mobility in InGaN- and GaN-channel high-electron-mobility transistors (HEMTs) while taking into account acoustic deformation potential, polar optical phonon, alloy disorder, and random dipole scatterings. For InGaN-channel HEMTs, we find that not only alloy disorder but also random dipole scattering has a strong impact on the electron mobility and it significantly decreases as the In mole fraction of the channel increases. Our calculation also shows that the channel thickness w dependence of the mobility is rather weak when w > 1 nm for In0.1Ga0.9N-channel HEMTs.

  4. Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

    International Nuclear Information System (INIS)

    Duan Bao-Xing; Yang Yin-Tang

    2012-01-01

    In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Yiding, Lin; Ng, G. I.; Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S.

    2015-01-01

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10 13  cm −2 ) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm 2 /V.s and a sheet carrier concentration (n s ) of 0.97 × 10 13  cm −2 for the DH-HEMT structure, while they are 1310 cm 2 /V.s and 1.09 × 10 13  cm −2 , respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure

  6. High mobility transparent conducting oxides for thin film solar cells

    International Nuclear Information System (INIS)

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  7. Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

    Energy Technology Data Exchange (ETDEWEB)

    Kohen, David, E-mail: david.kohen@asm.com; Nguyen, Xuan Sang; Made, Riko I; Lee, Kwang Hong; Lee, Kenneth Eng Kian [Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore); Yadav, Sachin; Kumar, Annie; Gong, Xiao; Yeo, Yee Chia [National University of Singapore, 21 Lower Kent Ridge Rd, Singapore 119077 (Singapore); Heidelberger, Christopher [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Yoon, Soon Fatt [Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Fitzgerald, Eugene A. [Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore); Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States)

    2016-08-15

    We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70 μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.

  8. Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

    Science.gov (United States)

    Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-04-01

    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

  9. The Internet in Connecting Electronics Health Record Mobile Clients

    Czech Academy of Sciences Publication Activity Database

    Hanzlíček, Petr; Špidlen, Josef; Zvárová, Jana

    2002-01-01

    Roč. 10, č. 6 (2002), s. 502-503 ISSN 0928-7329. [Mednet 2002. Qualit-e-Health. World Conference on the Internet in Medicine /7./. 04.12.2002-07.12.2002, Amsterdam] Institutional research plan: AV0Z1030915 Keywords : distributed electronic health record * mobile health data access Subject RIV: BD - Theory of Information

  10. Weak coupling theory of the ripplon limited mobility of a 2-D electron lattice

    International Nuclear Information System (INIS)

    Dahm, A.J.; Mehrotra, R.

    1981-01-01

    The one ripplon-n phonon scattering contribution to the mobility of a 2D electron lattice supported by a liquid helium substrate is calculated in first order perturbation theory to all orders of n in the weak coupling limit. The Debye Waller factor is shown to limit the momentum transfer at large ripplon wave-vectors and high temperatures causing a minimum in the mobility as a function of temperature. (orig.)

  11. High-brightness electron injectors

    International Nuclear Information System (INIS)

    Sheffield, R.L.

    1987-01-01

    Free-electron laser (FEL) oscillators and synchrotron light sources require pulse trains of high peak brightness and, in some applications, high-average power. Recent developments in the technology of photoemissive and thermionic electron sources in rf cavities for electron-linac injector applications offer promising advances over conventional electron injectors. Reduced emittance growth in high peak-current electron injectors may be achieved by using high field strengths and by linearizing the radial component of the cavity electric field at the expense of lower shunt impedance

  12. Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiO{sub x} capping layer by sputtering and post-annealing

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Shyh-Jer [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Chou, Cheng-Wei, E-mail: j2222222229@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Lin, Jyun-Hao; Yu, Hsin-Chieh; Chen, De-Long [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Ruan, Jian-Long [National Chung-Shan Institute of Science and Technology, Taoyuan, Taiwan (China)

    2017-04-15

    Highlights: • A technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p-NiO{sub x} capping layer. • The V{sub th} shifts from −3 V in the conventional transistor to 0.33 V, and on/off current ratio became 10{sup 7}. • The reverse gate leakage current is 10{sup −9} A/mm, and the off-state drain-leakage current is 10{sup −8} A/mm. • The V{sub th} hysteresis is extremely small at about 33 mV. - Abstract: In this paper, we present a technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p-NiO{sub x} capping layer. The p-NiO{sub x} layer is produced by sputtering at room temperature and post-annealing at 500 °C for 30 min in pure O{sub 2} environment to achieve high hole concentration. The V{sub th} shifts from −3 V in the conventional transistor to 0.33 V, and on/off current ratio became 10{sup 7}. The forward and reverse gate breakdown increase from 3.5 V and −78 V to 10 V and −198 V, respectively. The reverse gate leakage current is 10{sup −9} A/mm, and the off-state drain-leakage current is 10{sup −8} A/mm. The V{sub th} hysteresis is extremely small at about 33 mV. We also investigate the mechanism that increases hole concentration of p-NiO{sub x} after annealing in oxygen environment resulted from the change of Ni{sup 2+} to Ni{sup 3+} and the surge of (111)-orientation.

  13. High mobility ZnO nanowires for terahertz detection applications

    International Nuclear Information System (INIS)

    Liu, Huiqiang; Peng, Rufang; Chu, Shijin; Chu, Sheng

    2014-01-01

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  14. Electron mobility on the surface of liquid Helium: influence of surface level atoms and depopulation of lowest subbands

    International Nuclear Information System (INIS)

    Grigoriev, P. D.; Dyugaev, A. M.; Lebedeva, E. V.

    2008-01-01

    The temperature dependence of electron mobility is examined. We calculate the contribution to the electron scattering rate from the surface level atoms (SLAs), proposed in [10]. This contribution is substantial at low temperatures T < 0.5, when the He vapor concentration is exponentially small. We also study the effect of depopulation of the lowest energy subband, which leads to an increase in the electron mobility at high temperature. The results explain certain long-standing discrepancies between the existing theory and experiment on electron mobility on the surface of liquid helium

  15. Development of mobile electron beam plant for environmental applications

    International Nuclear Information System (INIS)

    Han, Bumsoo; Kim, Jinkyu; Kang, Wongu; Choi, Jang Seung; Jeong, Kwang-Young

    2016-01-01

    Due to the necessity of pilot scale test facility for continuous treatment of wastewater and gases on site, a mobile electron beam irradiation system mounted on a trailer has developed. This mobile electron beam irradiation system is designed for the individual field application with self-shielded structure of steel plate and lead block which will satisfy the required safety figures of International Commission on Radiological Protection (ICRP). Shielding of a mobile electron accelerator of 0.7 MeV, 30 mA has been designed and examined by Monte Carlo technique. Based on a 3-D model of electron accelerator shielding which is designed with steel and lead shield, radiation leakage was examined using the Monte Carlo N-Particle Transport (MCNP) Code. Simulations with two different versions (version 4c2 and version 5) of MCNP code showed agreements within statistical uncertainties, and the highest leakage expected is 5.5061×10 −01 (1±0.0454) μSv/h, which is far below the tolerable radiation dose limit for occupational workers. This unit could treat up to 500 m 3 of liquid waste per day at 2 kGy or 10,000 N m 3 of gases per hour at 15 kGy. - Highlights: • A mobile electron beam irradiation system mounted on a trailer has developed. • It is designed for treatment of wastewater and flue gas on site. • Shielding of 0.7 MeV, 30 mA accelerator has done by a Monte Carlo technique. • It can treat up to 500 m 3 /d of liquid waste at 2 kGy or 10,000 N m 3 /h of gas at 15 kGy.

  16. Theoretical modeling of electron mobility in superfluid {sup 4}He

    Energy Technology Data Exchange (ETDEWEB)

    Aitken, Frédéric; Bonifaci, Nelly [G2ELab-GreEn-ER, Equipe MDE, 21 Avenue des Martyrs, CS 90624, 38031 Grenoble Cedex 1 (France); Haeften, Klaus von [Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Eloranta, Jussi, E-mail: Jussi.Eloranta@csun.edu [Department of Chemistry and Biochemistry, California State University at Northridge, 18111 Nordhoff St., Northridge, California 91330 (United States)

    2016-07-28

    The Orsay-Trento bosonic density functional theory model is extended to include dissipation due to the viscous response of superfluid {sup 4}He present at finite temperatures. The viscous functional is derived from the Navier-Stokes equation by using the Madelung transformation and includes the contribution of interfacial viscous response present at the gas-liquid boundaries. This contribution was obtained by calibrating the model against the experimentally determined electron mobilities from 1.2 K to 2.1 K along the saturated vapor pressure line, where the viscous response is dominated by thermal rotons. The temperature dependence of ion mobility was calculated for several different solvation cavity sizes and the data are rationalized in the context of roton scattering and Stokes limited mobility models. Results are compared to the experimentally observed “exotic ion” data, which provides estimates for the corresponding bubble sizes in the liquid. Possible sources of such ions are briefly discussed.

  17. A Survey on the Reliability of Power Electronics in Electro-Mobility Applications

    DEFF Research Database (Denmark)

    Gadalla, Brwene Salah Abdelkarim; Schaltz, Erik; Blaabjerg, Frede

    2015-01-01

    Reliability is an important issue in the field of power electronics since most of the electrical energy is today processed by power electronics. In most of the electro-mobility applications, e.g. electric and hybridelectric vehicles, power electronic are commonly used in very harsh environment...... and extending the service lifetime as well. Research within power electronics is of high interest as it has an important impact in the industry of the electro-mobility applications. According to the aforementioned explanations, this paper will provide an overview of the common factors (thermal cycles, power...... cycles, vibrations, voltage stress and current ripple stress) affecting the reliability of power electronics in electromobility applications. Also, the researchers perspective is summarized from 2001 to 2015....

  18. 77 FR 15390 - Certain Mobile Electronic Devices Incorporating Haptics; Receipt of Amended Complaint...

    Science.gov (United States)

    2012-03-15

    ... INTERNATIONAL TRADE COMMISSION [DN 2875] Certain Mobile Electronic Devices Incorporating Haptics.... International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has received an amended complaint entitled Certain Mobile Electronic Devices...

  19. 78 FR 34132 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Science.gov (United States)

    2013-06-06

    ... INTERNATIONAL TRADE COMMISSION [Docket No 2958] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Correction to Notice of Receipt of Complaint; Solicitation... of complaint entitled Certain Portable Electronic Communications Devices, Including Mobile Phones and...

  20. Calculation of the mobility of electrons injected in liquid argon

    International Nuclear Information System (INIS)

    Ascarelli, G.

    1986-01-01

    A model calculation is carried out in which we evaluate the mobility of electrons injected in liquid argon. Scattering by both phonons and static density fluctuations is taken into account. The calculation for the mobility limited by phonon scattering differs from the usual calculation in crystals by considering both the local changes in the deformation potential and the changes of the amplitude of the phonons that are caused by the existence of density fluctuations. The calculation of the mobility limited by scattering from density fluctuations is carried out with the assumption that they give rise to a square-well (or barrier) potential that will scatter the electrons. The above perturbation ΔV 0 is related to a density fluctuation Δn by ΔV 0 = V 0 (n-bar+Δn)-V 0 (n-bar). The scattering volumes Ω, where the density fluctuation Δn is located, are weighted by exp(-r/xi) where xi is the correlation length and r is the radius of Ω. The magnitude of the different density fluctuations is weighted by exp[-(Δn) 2 Ω/2nS(0)], where S(0) = nk/sub B/TK/sub T/, K/sub T/ is the isothermal compressibility. The calculation of the mean free path is carried out using partial waves. Both scattering mechanisms, scattering by phonons and static density fluctuations, give comparable contributions to the mobility

  1. Ni/Au-gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Hsu, Wei-Chou; Su, Ke-Hua; Huang, Jun-Chin; Huang, Dong-Hai; Chen, Yeong-Jia

    2006-01-01

    A δ-doped In 0.45 Al 0.55 As/In 0.53 Ga 0.47 As/InAlGaAs/GaAs metamorphic high electron mobility transistor (MHEMT) using a Ni/Au-gate electrode has been successfully fabricated and demonstrated. Compared to conventional Au-gate devices with identical structures, the proposed device improves the kink-effect-related output conductance, the gate-voltage swing, the current drive capability, the breakdown characteristics, and the device power performance. Experimentally, a high extrinsic transconductance of 309 mS/mm, a high drain-source saturation current density of 573 mA/mm, an improved gate-voltage swing of 1.05 V with a corresponding saturation current density of 314 mA/mm, a high saturated output power of 11.3 dBm, and a high power gain of 23.8 dB with a power-added efficiency of 39.2 % are obtained for a 0.65 x 200 μm 2 gate at 300 K. In addition, the measured f T and f max are 49.1 and 61.7 GHz, respectively.

  2. Excess electron mobility in ethane. Density, temperature, and electric field effects

    International Nuclear Information System (INIS)

    Doeldissen, W.; Schmidt, W.F.; Bakale, G.

    1980-01-01

    The excess electron mobility in liquid ethane was measured under orthobaric conditions as a function of temperature and electric field strength up to the critical temperature at 305.33 K. The low field mobility was found to rise strongly with temperature and exhibits a maximum value of 44 cm 2 V -1 s -1 at 2 0 below the critical temperature. At temperatures above 260 K the electron drift velocity shows a sublinear field dependence at high values of the electric field strength. These observations lead to the supposition that in liquid ethane a transition from transport via localized states to transport in extended states occurs. Measurements were also performed in fluid ethane at densities from 2.4 to 12.45 mol L -1 and temperatures from 290 to 340 K. On isochores in the vicinity of the critical density, an increase of the low field mobility with temperature was observed. This effect was found to disappear both at low (rho = 2.4 mol L -1 ) and high densities (rho greater than or equal to 9.2 mol L -1 ). In this density range, a sublinear field dependence of the drift velocities at high field strengths was noted. The critical velocity associated with the appearance of hot electrons was observed to decrease with higher densities indicating a smaller fractional energy transfer in electron molecule collisions. A compilation of electron mobilities in gaseous and liquid ethane shows that, up to densitiesof rho = 9.5 mol L -1 , μ proportional to n -1 is fulfilled if temperature effects are ignored. At intermediate densities, 9 mol L -1 -1 , a density dependence of μ proportional to rho -5 is found followed by a stronger mobility decrease toward the triple point. Positive ion mobilities measured under orthobaric conditions followed Walden's rule

  3. 77 FR 18860 - Certain Consumer Electronics, Including Mobile Phones and Tablets; Notice of Receipt of Complaint...

    Science.gov (United States)

    2012-03-28

    ... INTERNATIONAL TRADE COMMISSION [DN 2885] Certain Consumer Electronics, Including Mobile Phones and.... International Trade Commission has received a complaint entitled Certain Consumer Electronics, Including Mobile... electronics, including mobile phones and tablets. The complaint names as respondents ASUSTeK Computer, Inc. of...

  4. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@ntu.edu.sg; Yiding, Lin; Ng, G. I. [NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-01-14

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10{sup 13 }cm{sup −2}) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm{sup 2}/V.s and a sheet carrier concentration (n{sub s}) of 0.97 × 10{sup 13 }cm{sup −2} for the DH-HEMT structure, while they are 1310 cm{sup 2}/V.s and 1.09 × 10{sup 13 }cm{sup −2}, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f{sub T}) and maximum oscillation frequency (f{sub max}) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.

  5. Resonance scattering and low-temperature electron mobility in HgTe-based gapless solid solutions

    International Nuclear Information System (INIS)

    Raikh, M.Eh.; Ehfros, A.L.

    1986-01-01

    Low-temperature electron mobility in a gapless semiconductor conditioned by electron resonance scattering on neutral acceptors, the levels of which are located in narrow vicinity near the Fermi level, is calculated. Mobility turns to be inverse proportional to density of acceptor states at the Fermi level. If donor concentration is rather high, then presence of a Coulomb gap at the Fermi level in the density of acceptor states conditioned by long-range character of Coulomb interaction should be taken into account for calculation of mobility. The Fermi level is placed in the tail of the acceptor state density at rather low donor concentration, and the Coulomb gap is absent at the Fermi level. A case of high acceptor concentration, when the acceptor states are delocalized at the Fermi level, is also considered

  6. High mobility solution-processed hybrid light emitting transistors

    International Nuclear Information System (INIS)

    Walker, Bright; Kim, Jin Young; Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B.; Chae, Gil Jo; Cho, Shinuk; Seo, Jung Hwa

    2014-01-01

    We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm 2 /V s, current on/off ratios of >10 7 , and external quantum efficiency of 10 −2 % at 2100 cd/m 2 . These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective

  7. Effect of temperature and pressure on excess electron mobility in n-hexane, 2,2,4-trimethylpentane, and tetramethylsilane

    International Nuclear Information System (INIS)

    Munoz, R.C.; Holroyd, R.A.

    1986-01-01

    Measurements of excess electron mobility are reported for liquid n-hexane, 2,2,4-trimethylpentane, and tetramethylsilane for pressures from 1 to 2500 bar and for temperatures from 18 to 120 0 C. For tetramethylsilane, a liquid that exhibits a high electron mobility, the mobility at constant density is proportional to T/sup -0.9/ between 25 and 100 0 C. The results are compared with the Basak--Cohen deformation potential theory. For n-hexane, where the mobility is low, Arrhenius behavior is observed. The isochoric activation energy increases with density. The results in this case are consistent with both the two-state and hopping models. In 2,2,4-trimethylpentane the mobility increases with increasing pressure at room temperature and decreases at high temperature. At 2500 bar and at intermediate temperatures (70--80 0 C) the mobility is approximately constant

  8. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.

    Science.gov (United States)

    Liao, S Y; Lu, C C; Chang, T; Huang, C F; Cheng, C H; Chang, L B

    2014-08-01

    Compared to AlGaN/GaN HEMT with 0.15 μm T-gate length, the AlInN/AlN/GaN one exhibits much higher current density and transconductance of 1558 mA/mm at Vd = 2 V and 330 mS/mm, respectively. The high extrinsic ft and fmax of 82 GHz and 70 GHz are extracted from AlInN/AlN/GaN HEMT. Besides, we find that the transconductance roll-off is significant in AlGaN/GaN, but largely improved in AlInN/AlN/GaN HEMT, suggesting that the high carrier density and lattice-matched epitaxial heterostructure is important to reach both large RF output power and high operation frequency, especially for an aggressively gate length scaling.

  9. Probing channel temperature profiles in Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kyaw, L. M., E-mail: a0048661@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Bera, L. K.; Dolmanan, S. B.; Tan, H. R.; Bhat, T. N.; Tripathy, S., E-mail: tripathy-sudhiranjan@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Liu, Y.; Bera, M. K.; Singh, S. P.; Chor, E. F. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2014-08-18

    Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in Al{sub x}Ga{sub 1-x}N/GaN high electron mobility transistors (HEMTs) fabricated on a 200 mm diameter Si(111) substrate. In particular, RuO{sub x}-based gate is used due to the semitransparent nature to the optical excitation wavelengths, thus allowing much accurate thermal investigations underneath the gate. To determine the channel temperature profile in devices subjected to different electrical bias voltages, the GaN band-edge PL peak shift calibration with respect to temperature is used. PL analyses show a maximum channel temperature up to 435 K underneath the gate edge between gate and drain, where the estimated thermal resistance in such a HEMT structure is about 13.7 KmmW{sup −1} at a power dissipation of ∼10 W/mm. The temperature profiles from micro-Raman measurements are also addressed from the E{sub 2}-high optical phonon peak shift of GaN, and this method also probes the temperature-induced peak shifts of optical phonon from Si thus showing the nature of thermal characteristics at the AlN/Si substrate interface.

  10. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa; Sevilla, Galo Torres; Cordero, Marlon Diaz; Kutbee, Arwa T.

    2017-01-01

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications

  11. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

    International Nuclear Information System (INIS)

    Capriotti, M.; Fleury, C.; Oposich, M.; Bethge, O.; Strasser, G.; Pogany, D.; Lagger, P.; Ostermaier, C.

    2015-01-01

    We provide theoretical and simulation analysis of the small signal response of SiO 2 /AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO 2 interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, C p , and conductance, G p . C p -voltage and G p -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance R br and the effective channel resistance. In particular, in the spill-over region, the drop of C p with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of R br with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, D it , from the G p /ω vs. angular frequency ω curves. A peak in G p /ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the G p /ω vs. ω peak saturates at high D it , which can lead to underestimation of D it . Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage

  12. The use of mobile learning application to the fundament of digital electronics course

    Science.gov (United States)

    Rakhmawati, L.; Firdha, A.

    2018-01-01

    A new trend in e-learning is known as Mobile Learning. Learning through mobile phones have become part of the educative process. Thus, the purposes of this study are to develop a mobile application for the Fundament of Digital Electronics course that consists of number systems operation, logic gates, and Boolean Algebra, and to assess the readiness, perceptions, and effectiveness of students in the use of mobile devices for learning in the classroom. This research uses Research and Development (R&D) method. The design used in this research, by doing treatment in one class and observing by using Android-based mobile application instructional media. The result obtained from this research shows that the test has 80 % validity aspect, 82 % of the user from senior high school students gives a positive response in using the application of mobile learning, and based on the result of post-test, 90, 90% students passed the exam. At last, it can be concluded that the use of the mobile learning application makes the learning process more effective when it is used in the teaching-learning process.

  13. Interpretation of transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor by capacitance deep level transient spectroscopy

    CERN Document Server

    Choi, K J; Yoo, H M; Lee, G Y

    1998-01-01

    The transconductance dispersion in AlGaAs/InGaAs PHEMT grown by MBE was interpreted by means of capacitance DLTS technique. When the gate bias was -0.2 V, the transconductance decreased at a very broad frequency range of 5.5 Hz -1.7x10 sup 4 Hz. However, when a positive bias was applied to the gate, the transconductance increased at a low frequency range and then decreased at a high frequency range. In the transconductance dispersion measurement as a function of temperature, the transition frequency shifted to higher frequency region with the increase in temperature. The emission energy for the change in the transition frequency was determined to be 0.394 eV from the temperature dependency of the transition frequency. In the capacitance DLTS measurements, we observed DX-center with thermal activation energy of 0.420 eV and two hole trap-like signals. The DX-center peak decreased as the filling pulse decreased from +0.6 V and disappeared at the bias of -0.1 V. Comparing the activation energy of DX-center in DL...

  14. Electron mobility variance in the presence of an electric field: Electron-phonon field-induced tunnel scattering

    International Nuclear Information System (INIS)

    Melkonyan, S.V.

    2012-01-01

    The problem of electron mobility variance is discussed. It is established that in equilibrium semiconductors the mobility variance is infinite. It is revealed that the cause of the mobility variance infinity is the threshold of phonon emission. The electron-phonon interaction theory in the presence of an electric field is developed. A new mechanism of electron scattering, called electron-phonon field-induced tunnel (FIT) scattering, is observed. The effect of the electron-phonon FIT scattering is explained in terms of penetration of the electron wave function into the semiconductor band gap in the presence of an electric field. New and more general expressions for the electron-non-polar optical phonon scattering probability and relaxation time are obtained. The results show that FIT transitions have principle meaning for the mobility fluctuation theory: mobility variance becomes finite.

  15. Transparent and Highly Responsive Phototransistors Based on a Solution-Processed, Nanometers-Thick Active Layer, Embedding a High-Mobility Electron-Transporting Polymer and a Hole-Trapping Molecule.

    Science.gov (United States)

    Caranzi, Lorenzo; Pace, Giuseppina; Sassi, Mauro; Beverina, Luca; Caironi, Mario

    2017-08-30

    Organic materials are suitable for light sensing devices showing unique features such as low cost, large area, and flexibility. Moreover, transparent photodetectors are interesting for smart interfaces, windows, and display-integrated electronics. The ease of depositing ultrathin organic films with simple techniques enables low light absorbing active layers, resulting in the realization of transparent devices. Here, we demonstrate a strategy to obtain high efficiency organic photodetectors and phototransistors based on transparent active layers with a visible transmittance higher than 90%. The photoactive layer is composed of two phases, each a few nanometers thick. First, an acceptor polymer, which is a good electron-transporting material, on top of which a small molecule donor material is deposited, forming noncontinuous domains. The small molecule phase acts as a trap for holes, thus inducing a high photoconductive gain, resulting in a high photoresponsivity. The organic transparent detectors proposed here can reach very high external quantum efficiency and responsivity values, which in the case of the phototransistors can be as high as ∼74000% and 340 A W -1 at 570 nm respectively, despite an absorber total thickness below 10 nm. Moreover, frequency dependent 2D photocurrent mapping allows discrimination between the contribution of a fast but inefficient and highly spatially localized photoinduced injection mechanism at the electrodes, and the onset of a slower and spatially extended photoconductive process, leading to high responsivity.

  16. Exact solution of a coupled spin–electron linear chain composed of localized Ising spins and mobile electrons

    International Nuclear Information System (INIS)

    Čisárová, Jana; Strečka, Jozef

    2014-01-01

    Exact solution of a coupled spin–electron linear chain composed of localized Ising spins and mobile electrons is found. The investigated spin–electron model is exactly solvable by the use of a transfer-matrix method after tracing out the degrees of freedom of mobile electrons delocalized over a couple of interstitial (decorating) sites. The exact ground-state phase diagram reveals an existence of five phases with different number of mobile electrons per unit cell, two of which are ferromagnetic, two are paramagnetic and one is antiferromagnetic. We have studied in particular the dependencies of compressibility and specific heat on temperature and electron density. - Highlights: • A coupled spin–electron chain composed of Ising spins and mobile electrons is exactly solved. • Quantum paramagnetic, ferromagnetic and antiferromagnetic ground states are found. • A compressibility shows a non-monotonous dependence on temperature and electron density. • Thermal dependences of specific heat display two distinct peaks

  17. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    International Nuclear Information System (INIS)

    Ravikiran, L.; Radhakrishnan, K.; Ng, G. I.; Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S.

    2015-01-01

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr 4 beam equivalent pressure of 1.86 × 10 −7 mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics

  18. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    International Nuclear Information System (INIS)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

    2014-01-01

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  19. A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation

    International Nuclear Information System (INIS)

    Tanaka, Takeshi; Shiojima, Kenji; Otoki, Yohei; Tokuda, Yutaka

    2014-01-01

    A study on defect states in relatively low-carbon doped GaN is presented. A large current collapse was observed in AlGaN/GaN high electron mobility transistor (HEMT) operation when the device channel was doped with carbon of 1 × 10 17 cm −3 . Deep level transient spectroscopy measurements showed a positive and even negative correlation between the densities of carbon and those of shallow trap states. Along with their small concentrations, shallow traps could not be associated with the collapse of the HEMT. Photo capacitance measurements yielded large signal at very deep levels of 1.6 and 2.4 eV in carbon doped GaN. Especially, the 2.4 eV deep trap was estimated to be acceptor type and related to some indirect states that the minority carrier transient spectroscopy could not characterize. A 20% of doped carbon was allocated to the very deep traps, and the large current collapse was attributed to these carbon-related states. - Highlights: • Systematic study on role of carbon in AlGaN/GaN HEMT structures was attempted. • Large current collapse was observed at HEMT operation in carbon doped channel. • Photo capacitance measurements yielded large signal at very deep levels. • The large current degradation was attributed to the carbon-related deep traps

  20. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@e.ntu.edu.sg; Ng, G. I. [NOVITAS-Nanoelectronics, Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-06-28

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  1. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    Energy Technology Data Exchange (ETDEWEB)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo, E-mail: park@physics.auburn.edu [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  2. Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

    International Nuclear Information System (INIS)

    Capriotti, M.; Alexewicz, A.; Fleury, C.; Gavagnin, M.; Bethge, O.; Wanzenböck, H. D.; Bertagnolli, E.; Pogany, D.; Strasser, G.; Visalli, D.; Derluyn, J.

    2014-01-01

    Using a generalized extraction method, the fixed charge density N int at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage V th of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted N int is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in V th  = +1 V. Fabrication of a gate stack with Al 2 O 3 as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al 2 O 3 interface

  3. Accounting of inter-electron correlations in the model of mobile electron shells

    International Nuclear Information System (INIS)

    Panov, Yu.D.; Moskvin, A.S.

    2000-01-01

    One studied the basic peculiar features of the model for mobile electron shells for multielectron atom or cluster. One offered a variation technique to take account of the electron correlations where the coordinates of the centre of single-particle atomic orbital served as variation parameters. It enables to interpret dramatically variation of electron density distribution under anisotropic external effect in terms of the limited initial basis. One studied specific correlated states that might make correlation contribution into the orbital current. Paper presents generalization of the typical MO-LCAO pattern with the limited set of single particle functions enabling to take account of additional multipole-multipole interactions in the cluster [ru

  4. High energy polarized electron beams

    International Nuclear Information System (INIS)

    Rossmanith, R.

    1987-01-01

    In nearly all high energy electron storage rings the effect of beam polarization by synchrotron radiation has been measured. The buildup time for polarization in storage rings is of the order of 10 6 to 10 7 revolutions; the spins must remain aligned over this time in order to avoid depolarization. Even extremely small spin deviations per revolution can add up and cause depolarization. The injection and the acceleration of polarized electrons in linacs is much easier. Although some improvements are still necessary, reliable polarized electron sources with sufficiently high intensity and polarization are available. With the linac-type machines SLC at Stanford and CEBAF in Virginia, experiments with polarized electrons will be possible

  5. Mobilities

    DEFF Research Database (Denmark)

    to social networks, personal identities, and our relationship to the built environment. The omnipresence of mobilities within everyday life, high politics, technology, and tourism (to mention but a few) all point to a key insight harnessed by the ‘mobilities turn’. Namely that mobilities is much more than......The world is on the move. This is a widespread understanding by many inhabitants of contemporary society across the Globe. But what does it actually mean? During over one decade the ‘mobilities turn’ within the social sciences have provided a new set of insights into the repercussions of mobilities...... and environmental degradation. The spaces and territories marked by mobilities as well as the sites marked by the bypassing of such are explored. Moreover, the architectural and technological dimensions to infrastructures and sites of mobilities will be included as well as the issues of power, social exclusion...

  6. Diffraction of high energy electrons

    International Nuclear Information System (INIS)

    Bourret, A.

    1981-10-01

    The diffraction of electrons by a crystal is examined to study its structure. As the electron-substance interaction is strong, it must be treated in a dynamic manner. Using the N waves theory and physical optics the base equations giving the wave at the outlet are deduced for a perfect crystal and their equivalence is shown. The more complex case of an imperfect crystal is then envisaged in these two approaches. In both cases, only the diffraction of high energy electrons ( > 50 KeV) are considered since in the diffraction of slow electrons back scattering cannot be ignored. Taking into account an increasingly greater number of beams, through fast calculations computer techniques, enables images to be simulated in very varied conditions. The general use of the Fast Fourier Transform has given a clear cut practical advantage to the multi-layer method [fr

  7. Electron mobility in few-layer MoxW1-xS2

    International Nuclear Information System (INIS)

    Chandrasekar, Hareesh; Nath, Digbijoy N

    2015-01-01

    Heterostructures of two-dimensional (2D) layered materials are increasingly being explored for electronics in order to potentially extend conventional transistor scaling and to exploit new device designs and architectures. Alloys form a key underpinning of any heterostructure device technology and therefore an understanding of their electronic properties is essential. In this paper, we study the intrinsic electron mobility in few-layer Mo x W 1−x S 2 as limited by various scattering mechanisms. The room temperature, energy-dependent scattering times corresponding to polar longitudinal optical (LO) phonon, alloy and background impurity scattering mechanisms are estimated based on the Born approximation to Fermi’s golden rule. The contribution of individual scattering rates is analyzed as a function of 2D electron density as well as of alloy composition in Mo x W 1−x S 2 . While impurity scattering limits the mobility for low carrier densities (<2–4×10 12 cm −2 ), LO polar phonon scattering is the dominant mechanism for high electron densities. Alloy scattering is found to play a non-negligible role for 0.5 < x < 0.7 in Mo x W 1−x S 2 . The LO phonon-limited and impurity-limited mobilities show opposing trends with respect to alloy mole fractions. The understanding of electron mobility in Mo x W 1−x S 2 presented here is expected to enable the design and realization of heterostructures and devices based on alloys of MoS 2 and WS 2 . (paper)

  8. Capacitance-Voltage Study on the Effects of Low Energy Electron Radiation on Al(0.27)Ga(0.73)N/GaN High Electron Mobility Transistors

    National Research Council Canada - National Science Library

    Jarzen, Thomas D

    2005-01-01

    .... Due to the high radiation tolerance of gallium nitride and a plethora of high temperature, high power and high frequency applications, the prospect that gallium nitride based devices will become key...

  9. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  10. First-principles method for electron-phonon coupling and electron mobility

    DEFF Research Database (Denmark)

    Gunst, Tue; Markussen, Troels; Stokbro, Kurt

    2016-01-01

    We present density functional theory calculations of the phonon-limited mobility in n-type monolayer graphene, silicene, and MoS2. The material properties, including the electron-phonon interaction, are calculated from first principles. We provide a detailed description of the normalized full......-band relaxation time approximation for the linearized Boltzmann transport equation (BTE) that includes inelastic scattering processes. The bulk electron-phonon coupling is evaluated by a supercell method. The method employed is fully numerical and does therefore not require a semianalytic treatment of part...... of the problem and, importantly, it keeps the anisotropy information stored in the coupling as well as the band structure. In addition, we perform calculations of the low-field mobility and its dependence on carrier density and temperature to obtain a better understanding of transport in graphene, silicene...

  11. Theoretical prediction of high carrier mobility in single-walled black phosphorus nanotubes

    Science.gov (United States)

    Li, Q. F.; Wang, H. F.; Yang, C. H.; Li, Q. Q.; Rao, W. F.

    2018-05-01

    One-dimensional semiconductors are promising materials for high-performance nanoscale devices. Using the first-principles calculations combined with deformation potential approximation, we study the electronic structures and carrier transport properties of black phosphorus nanotubes (BPNTs). It is found that both armchair and zigzag BPNTs with diameter 13.5-18.5 Å are direct bandgap semiconductors. At a similar diameter, the carrier mobility of zigzag BPNT is one order of magnitude larger than that of armchair BPNT. For armchair BPNTs, the electron mobility is about 90.70-155.33 cm2 V-1 s-1 at room temperature, which is about three times of its hole counterpart. For zigzag BPNTs, the maximum mobility can reach 2.87 ×103 cm2 V-1 s-1. Furthermore, the electronic properties can be effectively tuned by the strain. For zigzag (0,13) nanotube, there is a direct-to-indirect band gap transition at a tensile strain of about 6%. Moreover, the electron mobility is boosted sharply by one order of magnitude by applying the compressive or tensile strain. The electron mobility increases to 14.05 ×103 cm2 V-1 s-1 at a tensile strain of 9%. Our calculations highlight the tunable electronic properties and superior carrier mobility of BPNTs that are promising for interesting applications in future nano-electronic devices.

  12. High-mobility ultrathin semiconducting films prepared by spin coating.

    Science.gov (United States)

    Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

    2004-03-18

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  13. High-mobility ultrathin semiconducting films prepared by spin coating

    Science.gov (United States)

    Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

    2004-03-01

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  14. A Mobile Nanoscience and Electron Microscopy Outreach Program

    Science.gov (United States)

    Coffey, Tonya; Kelley, Kyle

    2013-03-01

    We have established a mobile nanoscience laboratory outreach program in Western NC that puts scanning electron microscopy (SEM) directly in the hands of K-12 students and the general public. There has been a recent push to develop new active learning materials to educate students at all levels about nanoscience and nanotechnology. Previous projects, such as Bugscope, nanoManipulator, or SPM Live! allowed remote access to advanced microscopies. However, placing SEM directly in schools has not often been possible because the cost and steep learning curve of these technologies were prohibitive, making this project quite novel. We have developed new learning modules for a microscopy outreach experience with a tabletop SEM (Hitachi TM3000). We present here an overview of our outreach and results of the assessment of our program to date.

  15. Effect of field-dependent mobility on the escape probability. I. Electrons photoinjected in neopentane

    International Nuclear Information System (INIS)

    Mozumder, A.; Carmichael, I.

    1978-01-01

    A general procedure is described for calculating the escape probability of an electron against neutralization in the presence of an external field after it has been ejected into a dielectric liquid from a planar surface. The present paper utilizes the field-dependent electron mobility measurement in neopentane by Bakale and Schmidt. The calculated escape probability, upon averaging over the initial distribution, is compared with the current efficiency measurement of Holroyd et al. The median thermalization legnth, inferred from this comparison, depends in general upon the assumed form of initial distribution. It is less than the value obtained when the field dependence of the mobility is ignored but greater than that applicable to the high energy irradiation case. A plausible explanation is offered

  16. High current plasma electron emitter

    International Nuclear Information System (INIS)

    Fiksel, G.; Almagri, A.F.; Craig, D.

    1995-07-01

    A high current plasma electron emitter based on a miniature plasma source has been developed. The emitting plasma is created by a pulsed high current gas discharge. The electron emission current is 1 kA at 300 V at the pulse duration of 10 ms. The prototype injector described in this paper will be used for a 20 kA electrostatic current injection experiment in the Madison Symmetric Torus (MST) reversed-field pinch. The source will be replicated in order to attain this total current requirement. The source has a simple design and has proven very reliable in operation. A high emission current, small size (3.7 cm in diameter), and low impurity generation make the source suitable for a variety of fusion and technological applications

  17. Electrical spin injection into high mobility 2D systems.

    Science.gov (United States)

    Oltscher, M; Ciorga, M; Utz, M; Schuh, D; Bougeard, D; Weiss, D

    2014-12-05

    We report on spin injection into a high mobility 2D electron system confined at an (Al,Ga)As/GaAs interface, using (Ga,Mn)As Esaki diode contacts as spin aligners. We measured a clear nonlocal spin valve signal, which varies nonmonotonically with the applied bias voltage. The magnitude of the signal cannot be described by the standard spin drift-diffusion model, because at maximum this would require the spin polarization of the injected current to be much larger than 100%, which is unphysical. A strong correlation of the spin signal with contact width and electron mean free path suggests that ballistic transport in the 2D region below ferromagnetic contacts should be taken into account to fully describe the results.

  18. High Power Electron Accelerator Prototype

    CERN Document Server

    Tkachenko, Vadim; Cheskidov, Vladimir; Korobeynikov, G I; Kuznetsov, Gennady I; Lukin, A N; Makarov, Ivan; Ostreiko, Gennady; Panfilov, Alexander; Sidorov, Alexey; Tarnetsky, Vladimir V; Tiunov, Michael A

    2005-01-01

    In recent time the new powerful industrial electron accelerators appear on market. It caused the increased interest to radiation technologies using high energy X-rays due to their high penetration ability. However, because of low efficiency of X-ray conversion for electrons with energy below 5 MeV, the intensity of X-rays required for some industrial applications can be achieved only when the beam power exceeds 300 kW. The report describes a project of industrial electron accelerator ILU-12 for electron energy up to 5 MeV and beam power up to 300 kW specially designed for use in industrial applications. On the first stage of work we plan to use the existing generator designed for ILU-8 accelerator. It is realized on the GI-50A triode and provides the pulse power up to 1.5-2 MW and up to 20-30 kW of average power. In the report the basic concepts and a condition of the project for today are reflected.

  19. Electronic waste recovery in Finland: Consumers' perceptions towards recycling and re-use of mobile phones.

    Science.gov (United States)

    Ylä-Mella, Jenni; Keiski, Riitta L; Pongrácz, Eva

    2015-11-01

    This paper examines consumers' awareness and perceptions towards mobile phone recycling and re-use. The results are based on a survey conducted in the city of Oulu, Finland, and analysed in the theoretical framework based on the theories of planned behaviour (TPB) and value-belief-norm (VBN). The findings indicate that consumers' awareness of the importance and existence of waste recovery system is high; however, awareness has not translated to recycling behaviour. The survey reveals that 55% of respondents have two or more unused mobile phones at homes. The more phones stored at homes, the more often reasons 'I don't know where to return' and/or 'have not got to do it yet' were mentioned. This indicates that proximity and the convenience of current waste management system are inadequate in promoting the return of small waste electrical and electronic equipment (WEEE). To facilitate re-use, and the highest level of recovery, consumers will need to be committed to return end-of-use electronics to WEEE collection centres without delays. Further, the supply and demand of refurbished mobile phones do not meet at this moment in Finland due to consumer's storing habits versus expectations of recent features under guarantee and unrealistic low prizes. The study also points out that, in order to change current storing habits of consumers, there is an explicit need for more information and awareness on mobile phone collection in Finland, especially on regarding retailers' take-back. Copyright © 2015 Elsevier Ltd. All rights reserved.

  20. 77 FR 24514 - Certain Consumer Electronics, Including Mobile Phones and Tablets; Institution of Investigation...

    Science.gov (United States)

    2012-04-24

    ..., Including Mobile Phones and Tablets; Institution of Investigation Pursuant to 19 U.S.C. 1337 AGENCY: U.S... mobile phones and tablets, by reason of infringement of certain claims of U.S. Patent No. 5,854,893... after importation of certain consumer electronics, including mobile phones and tablets, that infringe...

  1. Description of a Mobile-based Electronic Informed Consent System Development.

    Science.gov (United States)

    Hwang, Min-A; Kwak, In Ja

    2015-01-01

    Seoul National University Hospital constructed and implemented a computer-based informed consent system in December 2011. As of 2013, 30% of the informed consents were still filled out manually on paper. Patients and medical staff continuously suggested the implementation of a system for electronic informed consent using portable devices. Therefore, a mobile-based system for electronic informed consent was developed in 2013 to prevent the issues that arise with computer-based systems and paper informed consent. The rate of filling out electronic informed consent increased from 69% to 95% following the implementation of the mobile-based electronic informed consent. This construction of a mobile-based electronic informed consent system would be a good reference point for the development of a mobile-based Electronic Medical Record and for various mobile system environments in medical institutions.

  2. High current polarized electron source

    Science.gov (United States)

    Suleiman, R.; Adderley, P.; Grames, J.; Hansknecht, J.; Poelker, M.; Stutzman, M.

    2018-05-01

    Jefferson Lab operates two DC high voltage GaAs photoguns with compact inverted insulators. One photogun provides the polarized electron beam at the Continuous Electron Beam Accelerator Facility (CEBAF) up to 200 µA. The other gun is used for high average current photocathode lifetime studies at a dedicated test facility up to 4 mA of polarized beam and 10 mA of un-polarized beam. GaAs-based photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed facilities that must operate in excess of tens of mA of polarized average current. This contribution describes techniques to maintain good vacuum while delivering high beam currents, and techniques that minimize damage due to ion bombardment, the dominant mechanism that reduces photocathode yield. Advantages of higher DC voltage include reduced space-charge emittance growth and the potential for better photocathode lifetime. Highlights of R&D to improve the performance of polarized electron sources and prolong the lifetime of strained-superlattice GaAs are presented.

  3. Determination of grain boundary mobility during recrystallization by statistical evaluation of electron backscatter diffraction measurements

    International Nuclear Information System (INIS)

    Basu, I.; Chen, M.; Loeck, M.; Al-Samman, T.; Molodov, D.A.

    2016-01-01

    One of the key aspects influencing microstructural design pathways in metallic systems is grain boundary motion. The present work introduces a method by means of which direct measurement of grain boundary mobility vs. misorientation dependence is made possible. The technique utilizes datasets acquired by means of serial electron backscatter diffraction (EBSD) measurements. The experimental EBSD measurements are collectively analyzed, whereby datasets were used to obtain grain boundary mobility and grain aspect ratio with respect to grain boundary misorientation. The proposed method is further validated using cellular automata (CA) simulations. Single crystal aluminium was cold rolled and scratched in order to nucleate random orientations. Subsequent annealing at 300 °C resulted in grains growing, in the direction normal to the scratch, into a single deformed orientation. Growth selection was observed, wherein the boundaries with misorientations close to Σ7 CSL orientation relationship (38° 〈111〉) migrated considerably faster. The obtained boundary mobility distribution exhibited a non-monotonic behavior with a maximum corresponding to misorientation of 38° ± 2° about 〈111〉 axes ± 4°, which was 10–100 times higher than the mobility values of random high angle boundaries. Correlation with the grain aspect ratio values indicated a strong growth anisotropy displayed by the fast growing grains. The observations have been discussed in terms of the influence of grain boundary character on grain boundary motion during recrystallization. - Highlights: • Statistical microstructure method to measure grain boundary mobility during recrystallization • Method implementation independent of material or crystal structure • Mobility of the Σ7 boundaries in 5N Al was calculated as 4.7 × 10"–"8 m"4/J ⋅ s. • Pronounced growth selection in the recrystallizing nuclei in Al • Boundary mobility values during recrystallization 2–3 orders of magnitude

  4. 76 FR 41522 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Mobile Tablets, Portable...

    Science.gov (United States)

    2011-07-14

    ... Devices, Including Mobile Phones, Mobile Tablets, Portable Music Players, and Computers, and Components.... 1337, in the importation, sale for importation and sale within the United States after importation of certain mobile phones, mobile tablets, portable music players, and computers. 76 FR 24051 (Apr. 29, 2011...

  5. High Intensity Polarized Electron Sources

    International Nuclear Information System (INIS)

    Poelker, Benard; Adderley, Philip; Brittian, Joshua; Clark, J.; Grames, Joseph; Hansknecht, John; McCarter, James; Stutzman, Marcy; Suleiman, Riad; Surles-law, Kenneth

    2008-01-01

    During the 1990s, at numerous facilities world wide, extensive RandD devoted to constructing reliable GaAs photoguns helped ensure successful accelerator-based nuclear and high-energy physics programs using spin polarized electron beams. Today, polarized electron source technology is considered mature, with most GaAs photoguns meeting accelerator and experiment beam specifications in a relatively trouble-free manner. Proposals for new collider facilities however, require electron beams with parameters beyond today's state-of-the-art and serve to renew interest in conducting polarized electron source RandD. And at CEBAF/Jefferson Lab, there is an immediate pressing need to prepare for new experiments that require considerably more beam current than before. One experiment in particular?Q-weak, a parity violation experiment that will look for physics beyond the Standard Model?requires 180 uA average current at polarization >80% for a duration of one year, with run-averaged helicity correlate

  6. SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhry, Amit; Sangwan, S. [UIET, Panjab University, Chandigarh (India); Roy, J. N., E-mail: amit_chaudhry01@yahoo.com [Solar Semiconductro Pvt. Ltd, Hyderabad (India)

    2011-05-15

    This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor (MOS) devices. The results have also been compared with numerically reported results and show good agreement. (semiconductor devices)

  7. SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

    International Nuclear Information System (INIS)

    Chaudhry, Amit; Sangwan, S.; Roy, J. N.

    2011-01-01

    This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor (MOS) devices. The results have also been compared with numerically reported results and show good agreement. (semiconductor devices)

  8. A Prototype User Interface for a Mobile Electronic Clinical Note Data Entry System

    OpenAIRE

    Zafar, Atif; Lehto, Mark; Kim, Jongseo

    2005-01-01

    Recent advances in mobile computing technologies have made electronic medical records (EMRs) on handheld devices an attractive possibility. However, data entry paradigms popular on desktop machines do not translate well to mobile devices1,2. Based on a review of the literature on mobile device usability1–4, we built a prototype user interface for mobile EMRs and held focus groups with clinician users whose feedback provided useful insight about design choices, functionality and...

  9. 77 FR 27078 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Science.gov (United States)

    2012-05-08

    ... Phones and Tablet Computers, and Components Thereof; Notice of Receipt of Complaint; Solicitation of... entitled Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof... the United States after importation of certain electronic devices, including mobile phones and tablet...

  10. 77 FR 49458 - Certain Mobile Electronic Devices Incorporating Haptics; Amendment of the Complaint and Notice of...

    Science.gov (United States)

    2012-08-16

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices.... 1337 in the importation, sale for importation, and sale within the United States after importation of certain mobile electronic devices incorporating haptics, by reason of the infringement of claims of six...

  11. 78 FR 23593 - Certain Mobile Electronic Devices Incorporating Haptics; Termination of Investigation

    Science.gov (United States)

    2013-04-19

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices... the importation, sale for importation, and sale within the United States after importation of certain mobile electronic devices incorporating haptics that infringe certain claims of six Immersion patents. 77...

  12. Electrorecycling of Critical and Value Metals from Mobile Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Lister, Tedd E.; Wang, Peming; Anderko, Andre

    2014-09-01

    Mobile electronic devices such as smart phones and tablets are a significant source of valuable metals that should be recycled. Each year over a billion devices are sold world-wide and the average life is only a couple years. Value metals in phones are gold, palladium, silver, copper, cobalt and nickel. Devices now contain increasing amounts of rare earth elements (REE). In recent years the supply chain for REE has moved almost exclusively to China. They are contained in displays, speakers and vibrators within the devices. By US Department of Energy (DOE) classification, specific REEs (Nd, Dy, Eu, Tb and Y) are considered critical while others (Ce, La and Pr) are deemed near critical. Effective recycling schemes should include the recovery of these critical materials. By including more value materials in a recovery scheme, more value can be obtained by product diversification and less waste metals remains to be disposed of. REEs are mined as a group such that when specific elements become critical significantly more ore must be processed to capture the dilute but valuable critical elements. Targeted recycling of items containing the more of the less available critical materials could address their future criticality. This presentation will describe work in developing aqueous electrochemistry-based schemes for recycling metals from scrap mobile electronics. The electrorecycling process generates oxidizing agents at an anode while reducing dissolved metals at the cathode. E vs pH diagrams and metals dissolution experiments are used to assess effectiveness of various solution chemistries. Although several schemes were envisioned, a two stages process has been the focus of work: 1) initial dissolution of Cu, Sn, Ag and magnet materials using Fe+3 generated in acidic sulfate and 2) final dissolution of Pd and Au using Cl2 generated in an HCl solution. Experiments were performed using simulated metal mixtures. Both Cu and Ag were recovered at ~ 97% using Fe+3 while

  13. Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement

    Science.gov (United States)

    Ghosh, Krishnendu; Singisetti, Uttam

    2017-11-01

    This work reports an investigation of electron transport in monoclinic \\beta-Ga2O3 based on a combination of density functional perturbation theory based lattice dynamical computations, coupling calculation of lattice modes with collective plasmon oscillations and Boltzmann theory based transport calculations. The strong entanglement of the plasmon with the different longitudinal optical (LO) modes make the role LO-plasmon coupling crucial for transport. The electron density dependence of the electron mobility in \\beta-Ga2O3 is studied in bulk material form and also in the form of two-dimensional electron gas. Under high electron density a bulk mobility of 182 cm2/ V.s is predicted while in 2DEG form the corresponding mobility is about 418 cm2/V.s when remote impurities are present at the interface and improves further as the remote impurity center moves away from the interface. The trend of the electron mobility shows promise for realizing high electron mobility in dopant isolated electron channels. The experimentally observed small anisotropy in mobility is traced through a transient Monte Carlo simulation. It is found that the anisotropy of the IR active phonon modes is responsible for giving rise to the anisotropy in low-field electron mobility.

  14. 78 FR 13895 - Certain Consumer Electronics, Including Mobile Phones and Tablets; Commission Determination Not...

    Science.gov (United States)

    2013-03-01

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-839] Certain Consumer Electronics... importation of certain consumer electronics, including mobile phones and tablets, by reason of infringement of..., Washington (collectively, ``HTC''); LG Electronics, Inc. of Seoul, Republic of Korea, LG Electronics U.S.A...

  15. Mobile interstitial model and mobile electron model of mechano-induced luminescence in coloured alkali halide crystals

    International Nuclear Information System (INIS)

    Chandra, B.P.; Singh, Seema; Ojha, Bharti; Shrivastava, R.G.

    1996-01-01

    A theoretical study is made on the mobile interstitial and mobile electron models of mechano-induced luminescence in coloured alkali halide crystals. Equations derived indicate that the mechanoluminescence intensity should depend on several factors like strain rate, applied stress, temperature, density of F-centres and volume of crystal. The equations also involve the efficiency and decay time of mechanoluminescence. Results of mobile interstitial and mobile electron models are compared with the experimental observations, which indicated that the latter is more suitable as compared to the former. From the temperature dependence of ML, the energy gaps between the dislocation band and ground state of F-centre is calculated which are 0.08, 0.072 and 0.09 eV for KCl, KBr and NaCl crystals, respectively. The theory predicts that the decay of ML intensity is related to the process of stress relaxation in crystals. (author). 33 refs., 5 figs., 1 tab

  16. Optical phonon scattering on electronic mobility in Al2O3/AlGaN/AlN/GaN heterostructures

    Science.gov (United States)

    Zhou, X. J.; Qu, Y.; Ban, S. L.; Wang, Z. P.

    2017-12-01

    Considering the built-in electric fields and the two-mode property of transverse optical phonons in AlGaN material, the electronic eigen-energies and wave functions are obtained by solving Schrödinger equation with the finite difference method. The dispersion relations and potentials of the optical phonons are given by the transfer matrix method. The mobility of the two dimensional electron gas influenced by the optical phonons in Al2O3/AlGaN/AlN/GaN heterostructures is investigated based on the theory of Lei-Ting force balance equation. It is found that the scattering from the half-space phonons is the main factor affecting the electronic mobility, and the influence of the other phonons can be ignored. The results show that the mobility decreases with increasing the thicknesses of Al2O3 and AlN layers, but there is no definite relationship between the mobility and the thickness of AlGaN barrier. The mobility is obviously reduced by increasing Al component in AlGaN crystal to show that the effect of ternary mixed crystals is important. It is also found that the mobility increases first and then decreases as the increment of the fixed charges, but decreases always with increasing temperature. The heterostructures constructed here can be good candidates as metal-oxide-semiconductor high-electron-mobility-transistors since they have higher electronic mobility due to the influence from interface phonons weakened by the AlN interlayer.

  17. Decal electronics for printed high performance cmos electronic systems

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-11-23

    High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications. While there exist bulk material reduction methods to flex them, such thinned CMOS electronics are fragile and vulnerable to handling for high throughput manufacturing. Here, we show a fusion of a CMOS technology compatible fabrication process for flexible CMOS electronics, with inkjet and conductive cellulose based interconnects, followed by additive manufacturing (i.e. 3D printing based packaging) and finally roll-to-roll printing of packaged decal electronics (thin film transistors based circuit components and sensors) focusing on printed high performance flexible electronic systems. This work provides the most pragmatic route for packaged flexible electronic systems for wide ranging applications.

  18. Cassette pontoon bridge of high mobility

    Directory of Open Access Journals (Sweden)

    Krzysztof KOSIUCZENKO

    2011-01-01

    Full Text Available Looking through the known and used buoyant systems, it can be remarked that the single buoyant segments are the stiff objects made of steel or plastic with variable dimensions and a complex construction. The ready to use buoyant segments, that assure the proper displacement, must have the factory leak-tightness. They take up a big transportation volume and need the assurance of the suitably abundant means of transport. Usually the heavy wheeled vehicles are needed because of high own mass of buoyant segment and large gauges. The exploitation of such constructions is very expensive. A cassette pontoon bridge, presented in this paper, is the proposition of the increase of the mobility of construction. The decrease of the single buoyant segment dimensions with the assurance of the capacity leads that more segments fit into in the same dimensions of the loading compartment of the vehicle and storage accommodation. The application of standardized joints assures the assembly efficiency with not numerous crew.

  19. High-Power Electron Accelerators for Space (and other) Applications

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Dinh Cong [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Lewellen, John W. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-05-23

    This is a presentation on high-power electron accelerators for space and other applications. The main points covered are: electron beams for space applications, new designs of RF accelerators, high-power high-electron mobility transistors (HEMT) testing, and Li-ion battery design. In summary, the authors have considered a concept of 1-MeV electron accelerator that can operate up to several seconds. This concept can be extended to higher energy to produce higher beam power. Going to higher beam energy requires adding more cavities and solid-state HEMT RF power devices. The commercial HEMT have been tested for frequency response and RF output power (up to 420 W). Finally, the authors are testing these HEMT into a resonant load and planning for an electron beam test in FY17.

  20. Empirical electron cross-field mobility in a Hall effect thruster

    International Nuclear Information System (INIS)

    Garrigues, L.; Perez-Luna, J.; Lo, J.; Hagelaar, G. J. M.; Boeuf, J. P.; Mazouffre, S.

    2009-01-01

    Electron transport across the magnetic field in Hall effect thrusters is still an open question. Models have so far assumed 1/B 2 or 1/B scaling laws for the 'anomalous' electron mobility, adjusted to reproduce the integrated performance parameters of the thruster. We show that models based on such mobility laws predict very different ion velocity distribution functions (IVDF) than measured by laser induced fluorescence (LIF). A fixed spatial mobility profile, obtained by analysis of improved LIF measurements, leads to much better model predictions of thruster performance and IVDF than 1/B 2 or 1/B mobility laws for discharge voltages in the 500-700 V range.

  1. Development of high current electron beam generator

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook [and others

    1997-05-01

    A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs.

  2. Development of high current electron beam generator

    International Nuclear Information System (INIS)

    Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook

    1997-05-01

    A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs

  3. The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

    International Nuclear Information System (INIS)

    Joyce, Hannah J; Baig, Sarwat A; Parkinson, Patrick; Davies, Christopher L; Boland, Jessica L; Herz, Laura M; Johnston, Michael B; Tan, H Hoe; Jagadish, Chennupati

    2017-01-01

    Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm 2 V −1 s −1 ) and ultrashort charge carrier lifetimes (1–5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and lifetime can be tuned. Here we use optical-pump–terahertz-probe spectroscopy to quantify how mobility and lifetime depend on the nanowire surfaces and on carrier density in unpassivated GaAs nanowires. We also present two alternative frameworks for the analysis of nanowire photoconductivity: one based on plasmon resonance and the other based on Maxwell–Garnett effective medium theory with the nanowires modelled as prolate ellipsoids. We find the electron mobility decreases significantly with decreasing nanowire diameter, as charge carriers experience increased scattering at nanowire surfaces. Reducing the diameter from 50 nm to 30 nm degrades the electron mobility by up to 47%. Photoconductivity dynamics were dominated by trapping at saturable states existing at the nanowire surface, and the trapping rate was highest for the nanowires of narrowest diameter. The maximum surface recombination velocity, which occurs in the limit of all traps being empty, was calculated as 1.3  ×  10 6 cm s −1 . We note that when selecting the optimum nanowire diameter for an ultrafast device, there is a trade-off between achieving a short lifetime and a high carrier mobility. To achieve high speed GaAs nanowire devices featuring the highest charge carrier mobilities and shortest lifetimes, we recommend operating the devices at low charge carrier densities. (paper)

  4. Rational In Silico Design of an Organic Semiconductor with Improved Electron Mobility.

    Science.gov (United States)

    Friederich, Pascal; Gómez, Verónica; Sprau, Christian; Meded, Velimir; Strunk, Timo; Jenne, Michael; Magri, Andrea; Symalla, Franz; Colsmann, Alexander; Ruben, Mario; Wenzel, Wolfgang

    2017-11-01

    Organic semiconductors find a wide range of applications, such as in organic light emitting diodes, organic solar cells, and organic field effect transistors. One of their most striking disadvantages in comparison to crystalline inorganic semiconductors is their low charge-carrier mobility, which manifests itself in major device constraints such as limited photoactive layer thicknesses. Trial-and-error attempts to increase charge-carrier mobility are impeded by the complex interplay of the molecular and electronic structure of the material with its morphology. Here, the viability of a multiscale simulation approach to rationally design materials with improved electron mobility is demonstrated. Starting from one of the most widely used electron conducting materials (Alq 3 ), novel organic semiconductors with tailored electronic properties are designed for which an improvement of the electron mobility by three orders of magnitude is predicted and experimentally confirmed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. 75 FR 32984 - Policy on the Retention of Supporting Documents and the Use of Electronic Mobile Communication...

    Science.gov (United States)

    2010-06-10

    ...-0168] Policy on the Retention of Supporting Documents and the Use of Electronic Mobile Communication... changes regarding the retention of supporting documents and the use of electronic mobile communication... electronic mobile communication/tracking records to be supporting documents, as they record the time, date...

  6. Treatment Of Wastewater For Reuse With Mobile Electron Beam Plant

    International Nuclear Information System (INIS)

    Han, B.; Kim, J.K.; Kim, Y.R.; Zommer, N.

    2012-01-01

    The use of alternative disinfectants to chlorine for the wastewater treatment has received increasing attention in recent years to treat either liquid or solids streams within wastewater treatment plants for pathogens and trace organics (TOrCs). Although several technologies have come to the forefront as an alternative to chlorine (e.g., ultraviolet [UV] and hydrogen peroxide), the majority of these technologies are chemically based, with the exception of UV. An attractive physical disinfection approach is by electron beam (EB) irradiation. EB treatment of wastewater leads to their purification from various pollutants. It is caused by the decomposition of pollutants as a result of their reactions with highly reactive species formed from water radiolysis: hydrated electron, OH free radical and H atom [Pikaev (1986)]. Sometimes methods such as EB with biological treatment, adsorption and others improve the effect of EB treatment of the wastewater purification. In the process of EB treatment of wastewater there are utilized chemical transformations of pollutants induced by ionizing radiation. At sufficiently high absorbed doses these transformations can result in complete decomposition (removal) of the substance. Under real conditions, i.e., at rather high content of pollutants in a wastewater and economically acceptable doses, partial decomposition of pollutant takes place as well as transformations of pollutant molecules that result in improving subsequent purification stages, efficiency of the process being notably influenced by irradiation conditions and wastewater composition [Woods and Pikaev (1994)]. (author)

  7. Treatment Of Wastewater For Reuse With Mobile Electron Beam Plant

    Energy Technology Data Exchange (ETDEWEB)

    Han, B.; Kim, J. K.; Kim, Y. R. [EB TECH Co., Ltd., Daejeon (Korea, Republic of); Zommer, N. [Pele Inc., Milpitas Californaa (United States)

    2012-07-01

    The use of alternative disinfectants to chlorine for the wastewater treatment has received increasing attention in recent years to treat either liquid or solids streams within wastewater treatment plants for pathogens and trace organics (TOrCs). Although several technologies have come to the forefront as an alternative to chlorine (e.g., ultraviolet [UV] and hydrogen peroxide), the majority of these technologies are chemically based, with the exception of UV. An attractive physical disinfection approach is by electron beam (EB) irradiation. EB treatment of wastewater leads to their purification from various pollutants. It is caused by the decomposition of pollutants as a result of their reactions with highly reactive species formed from water radiolysis: hydrated electron, OH free radical and H atom [Pikaev (1986)]. Sometimes methods such as EB with biological treatment, adsorption and others improve the effect of EB treatment of the wastewater purification. In the process of EB treatment of wastewater there are utilized chemical transformations of pollutants induced by ionizing radiation. At sufficiently high absorbed doses these transformations can result in complete decomposition (removal) of the substance. Under real conditions, i.e., at rather high content of pollutants in a wastewater and economically acceptable doses, partial decomposition of pollutant takes place as well as transformations of pollutant molecules that result in improving subsequent purification stages, efficiency of the process being notably influenced by irradiation conditions and wastewater composition [Woods and Pikaev (1994)]. (author)

  8. Electron-capture process and ion mobility spectra in plasma chromatography

    International Nuclear Information System (INIS)

    Karasek, F.W.; Spangler, G.E.

    1981-01-01

    The basic principles of plasma chromatography are introduced and ion mobility relationships presented. The relationships of plasma chromatography to electron-capture detector mechanisms are discussed, including electron energy considerations and electron-capture reactions. A number of experimental studies by plasma chromatography are described. (C.F.)

  9. High school students’ usage behavior and views about mobile phones

    Directory of Open Access Journals (Sweden)

    Ahmet Ergin

    2014-09-01

    Full Text Available Objective: The aim of this study was to determine high school students’ usage behavior and views about mobile phones. Methods:Totally 253 (85.5% students educated at Honaz High School within the academic year 2010-2011, participated to this cross-sectional study and a questionnaire consisting of 42 questions which aimed to determine usage behavior and views about mobile phones was administered to the students. Results:The mean age of the students was 16.1 ± 1.1 years, and 56.9% of them were girl. 79.8% of students have mobile phone and 53.9% of them make daily average of over 30 minutes mobile phone calls. 76.1% of participants stated that they did not use headphones, 78.1% did not turn off their mobile phones when they are sleeping and 67.3% put it right next to them or under the pillow. 83.1% of students think mobile phones are harmful for human health, 56.7% think the base stations are harmful to human health and the environment, 91.3% think mobile phones are harmful for children, pregnant women and elderly people. Conclusion: It is found that students’ mobile phone ownership is widespread, the age of starting to use mobile phone and headphones usage is low, knowledge about the base stations is not adequate.

  10. Electromagnetic interference of mobile phones with electronic implants

    International Nuclear Information System (INIS)

    Kainz, W.

    2000-03-01

    Chapter 1:Interference matrix: The objective of Chapter 1 was to give an overview of the implants used at present and their electromagnetic compatibility (EMC). The evaluation of the available literature provides an estimate of the probability of electronic implants being influenced by various interference sources. A literature search at the AKH (Allgemeines Krankenhaus) in Vienna and at the Technical University of Vienna in the FIZ (Fach-Informations-Zentrum) -Biomedizinische Technik, Medline, Pascal Biomed, CC Search und Embase databases yielded 236 relevant publications. At present 12 different implants are used: pacemaker, defibrillator, cochlear and brain-stem implants, neurostimulators, spinal-cord stimulators, spinal-fusion stimulators, telemetry systems, artificial hearts, drug-delivery systems, neurological pulse generators, visual prosthetics and implantable patient chips. The frequency with which they are used and the EMC on exposure to the various interference sources was summarized. Publications on EMC were found only for the first six implant types and only for 30% of the possible combinations of implant type and interference source. Based on the number of the implants examined, the probability of interference was calculated and summarized in the interference matrix. Chapter 2:Measurements on the phantom: No publication on the electromagnetic compatibility of neurological pulse generators (NPG) could be found. This implant has been used increasingly in the last few years to treat Parkinson's disease. A phantom was built to examine this implant at 900 MHz. The electromagnetic compatibility was measured by exposing the NPG to the fields of ten different 900 MHz GSM mobile phones. Every mobile phone was tested in three different positions relative to the phantom, with four electrode configurations and four stimulation parameters. No interference was found even at a maximum transmit power of 2 watts. Further tests with half-wave dipoles and increased

  11. Electrical resistivity, Hall coefficient and electronic mobility in indium antimonide at different magnetic fields and temperatures

    International Nuclear Information System (INIS)

    Jee, Madan; Prasad, Vijay; Singh, Amita

    1995-01-01

    The electrical resistivity, Hall coefficient and electronic mobility of n-type and p-type crystals of indium antimonide have been measured from 25 degC-100 degC temperature range. It has been found by this measurement that indium antimonide is a compound semiconductor with a high mobility 10 6 cm 2 /V.S. The Hall coefficient R H was measured as a function of magnetic field strength H for a number of samples of both p and n-type using fields up to 12 kilo gauss. The Hall coefficient R h decreases with increasing magnetic fields as well as with increase in temperature of the sample. The electric field is more effective on samples with high mobilities and consequently the deviations from linearity are manifested at comparatively low values of the electric field. The measurement of R H in weak and strong magnetic fields makes it possible to determine the separate concentration of heavy and light holes. Measured values of Hall coefficient and electrical resistivity show that there is a little variation of ρ and R h with temperatures as well as with magnetic fields. (author). 12 refs., 5 tabs

  12. Record high hole mobility in polymer semiconductors via side-chain engineering.

    Science.gov (United States)

    Kang, Il; Yun, Hui-Jun; Chung, Dae Sung; Kwon, Soon-Ki; Kim, Yun-Hi

    2013-10-09

    Charge carrier mobility is still the most challenging issue that should be overcome to realize everyday organic electronics in the near future. In this Communication, we show that introducing smart side-chain engineering to polymer semiconductors can facilitate intermolecular electronic communication. Two new polymers, P-29-DPPDBTE and P-29-DPPDTSE, which consist of a highly conductive diketopyrrolopyrrole backbone and an extended branching-position-adjusted side chain, showed unprecedented record high hole mobility of 12 cm(2)/(V·s). From photophysical and structural studies, we found that moving the branching position of the side chain away from the backbone of these polymers resulted in increased intermolecular interactions with extremely short π-π stacking distances, without compromising solubility of the polymers. As a result, high hole mobility could be achieved even in devices fabricated using the polymers at room temperature.

  13. 77 FR 34063 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Science.gov (United States)

    2012-06-08

    ... Phones and Tablet Computers, and Components Thereof Institution of Investigation AGENCY: U.S... the United States after importation of certain electronic devices, including mobile phones and tablet... mobile phones and tablet computers, and components thereof that infringe one or more of claims 1-3 and 5...

  14. 75 FR 4583 - In the Matter of: Certain Electronic Devices, Including Mobile Phones, Portable Music Players...

    Science.gov (United States)

    2010-01-28

    ..., Including Mobile Phones, Portable Music Players, and Computers; Notice of Investigation AGENCY: U.S... music players, and computers, by reason of infringement of certain claims of U.S. Patent Nos. 6,714,091... importation of certain electronic devices, including mobile phones, portable music players, or computers that...

  15. Research on mobile electronic commerce security technology based on WPKI

    Science.gov (United States)

    Zhang, Bo

    2013-07-01

    Through the in-depth study on the existing mobile e-commerce and WAP protocols, this paper presents a security solution of e-commerce system based on WPKI, and describes its implementation process and specific implementation details. This solution uniformly distributes the key used by the various participating entities , to fully ensure the confidentiality, authentication, fairness and integrity of mobile e-commerce payments, therefore has some pract ical value for improving the security of e-commerce system.

  16. Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.

    Science.gov (United States)

    Zan, Hsiao-Wen; Yeh, Chun-Cheng; Meng, Hsin-Fei; Tsai, Chuang-Chuang; Chen, Liang-Hao

    2012-07-10

    An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. High-energy electron diffraction and microscopy

    CERN Document Server

    Peng, L M; Whelan, M J

    2011-01-01

    This book provides a comprehensive introduction to high energy electron diffraction and elastic and inelastic scattering of high energy electrons, with particular emphasis on applications to modern electron microscopy. Starting from a survey of fundamental phenomena, the authors introduce the most important concepts underlying modern understanding of high energy electron diffraction. Dynamical diffraction in transmission (THEED) and reflection (RHEED) geometries is treated using ageneral matrix theory, where computer programs and worked examples are provided to illustrate the concepts and to f

  18. Micromagnetics on high-performance workstation and mobile computational platforms

    Science.gov (United States)

    Fu, S.; Chang, R.; Couture, S.; Menarini, M.; Escobar, M. A.; Kuteifan, M.; Lubarda, M.; Gabay, D.; Lomakin, V.

    2015-05-01

    The feasibility of using high-performance desktop and embedded mobile computational platforms is presented, including multi-core Intel central processing unit, Nvidia desktop graphics processing units, and Nvidia Jetson TK1 Platform. FastMag finite element method-based micromagnetic simulator is used as a testbed, showing high efficiency on all the platforms. Optimization aspects of improving the performance of the mobile systems are discussed. The high performance, low cost, low power consumption, and rapid performance increase of the embedded mobile systems make them a promising candidate for micromagnetic simulations. Such architectures can be used as standalone systems or can be built as low-power computing clusters.

  19. Electron mobility and saturation of ion yield in 2,2,4,4-tetramethylpentane

    International Nuclear Information System (INIS)

    Poffenberger, P.R.; Astbury, A.; Fincke-Keeler, M.; Keeler, R.K.; Li, Y.; Robertson, L.P.; Rosvick, M.; Schenk, P.; Oram, C.; Sobie, R.

    1993-01-01

    The electron drift mobility μ and zero field free ion yield G fi 0 have been measured for liquid 2,2,4,4-tetramethylpentane using a waveform analysis. The saturation of the ion yield for highly ionizing radiation has also been investigated and parameterized using the Birks' equation. The results obtained are μ=26.3±0.8 cm 2 /V s, G fi 0 =0.743±0.029 electrons/100 eV, and a Birks' factor ranging from kB=0.222±0.014 cm/MeV at 604 V/cm to kB=0.141±0.021 cm/MeV at 3625 V/cm. (orig.)

  20. Development of an electronic medical report delivery system to 3G GSM mobile (cellular) phones for a medical imaging department.

    Science.gov (United States)

    Lim, Eugene Y; Lee, Chiang; Cai, Weidong; Feng, Dagan; Fulham, Michael

    2007-01-01

    Medical practice is characterized by a high degree of heterogeneity in collaborative and cooperative patient care. Fast and effective communication between medical practitioners can improve patient care. In medical imaging, the fast delivery of medical reports to referring medical practitioners is a major component of cooperative patient care. Recently, mobile phones have been actively deployed in telemedicine applications. The mobile phone is an ideal medium to achieve faster delivery of reports to the referring medical practitioners. In this study, we developed an electronic medical report delivery system from a medical imaging department to the mobile phones of the referring doctors. The system extracts a text summary of medical report and a screen capture of diagnostic medical image in JPEG format, which are transmitted to 3G GSM mobile phones.

  1. High-resolution electron microscopy

    CERN Document Server

    Spence, John C H

    2013-01-01

    This new fourth edition of the standard text on atomic-resolution transmission electron microscopy (TEM) retains previous material on the fundamentals of electron optics and aberration correction, linear imaging theory (including wave aberrations to fifth order) with partial coherence, and multiple-scattering theory. Also preserved are updated earlier sections on practical methods, with detailed step-by-step accounts of the procedures needed to obtain the highest quality images of atoms and molecules using a modern TEM or STEM electron microscope. Applications sections have been updated - these include the semiconductor industry, superconductor research, solid state chemistry and nanoscience, and metallurgy, mineralogy, condensed matter physics, materials science and material on cryo-electron microscopy for structural biology. New or expanded sections have been added on electron holography, aberration correction, field-emission guns, imaging filters, super-resolution methods, Ptychography, Ronchigrams, tomogr...

  2. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

    NARCIS (Netherlands)

    Zomer, P. J.; Dash, S. P.; Tombros, N.; van Wees, B. J.

    2011-01-01

    We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm(2) V-1 s(-1) at room temperature and 275 000 cm(2) V-1 s(-1) at 4.2 K. The excellent quality is supported by the early

  3. Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

    International Nuclear Information System (INIS)

    Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

    2004-01-01

    NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

  4. Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

    KAUST Repository

    Kanimozhi, Catherine K.

    2012-10-10

    In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a copolymer with exceptional properties such as extended absorption characteristics (up to ∼1100 nm) and field-effect electron mobility values of >1 cm 2 V -1 s -1. The synthesis of this novel DPP-DPP copolymer in combination with the demonstration of transistors with extremely high electron mobility makes this work an important step toward a new family of DPP-DPP copolymers for application in the general area of organic optoelectronics. © 2012 American Chemical Society.

  5. The quasi-ballistic model of electron mobility in liquid hydrocarbons

    International Nuclear Information System (INIS)

    Mozumder, A.

    1996-01-01

    A phenomenological theory of low-mobility liquid hydrocarbons is developed which includes electron ballistic motion in the quasi-free state, in competition with diffusion and trapping. For most low-mobility liquids the theory predicts consistently the effective mobility and activation energy, in agreement with experiments, using quasi-free mobility and trap density respectively as ∼ 100 cm 2 v -1 s -1 and ∼ 10 19 cm -3 . Field dependence of mobility if theoretically of quadratic type for relatively small fields, agreeing approximately with experimental data for n-hexane. Electron scavenging with ''good'' scavengers occurs via the quasi-free state at nearly diffusion-controlled rate; however the effect of large mean free path is seen clearly. (author)

  6. Surface roughness induced electron mobility degradation in InAs nanowires

    International Nuclear Information System (INIS)

    Wang Fengyun; Yip, Sen Po; Han, Ning; Fok, KitWa; Lin, Hao; Hou, Jared J; Dong, Guofa; Hung, Tak Fu; Chan, K S; Ho, Johnny C

    2013-01-01

    In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15 000 cm 2 V −1 s −1 when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance. (paper)

  7. Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

    International Nuclear Information System (INIS)

    Mishima, T. D.; Edirisooriya, M.; Santos, M. B.

    2014-01-01

    In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature

  8. Electron mobility in supercritical ethane as a function of density and temperature

    International Nuclear Information System (INIS)

    Nishikawa, M.; Holroyd, R.A.; Sowada, U.

    1980-01-01

    The electron mobility is reported for ethane as a function of density at various temperatures above T/sub c/. The high pressure cell used permits measurements to 200 atm. Our analysis shows that theory is consistent with the ethane mobility results at low and intermediate densities. At densities less than 1 x 10 21 molecules/cm 3 electrons are scattered by isolated ethane molecules and the Lorentz equation is valid. At intermediate densities, μ/sub e/ correlates with the square of the velocity of sound, indicating that in dense fluids the adiabatic compressibility must be included. The data are consistent with a modified Cohen--Lekner equation, and the minimum in μ/sub e/N observed at densities just below d/sub c/ is qualitatively accounted for by changes in the adiabatic compressibility. Thus the concept of quasilocalization, suggested by others to qualitatively explain such minima, is unnecessary here. At higher densities an additional, unspecified, scattering mechanism becomes important

  9. Electron mobility in the inversion layers of fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru; Naumova, O. V.; Fomin, B. I. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2017-04-15

    The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

  10. Exploring the Use of Electronic Mobile Technologies among Distance Learners in Rural Communities for Safe and Disruptive Learning

    Science.gov (United States)

    Ntloedibe-Kuswani, Gomang Seratwa

    2013-01-01

    Several studies indicated the potential of electronic mobile technologies in reaching (safe learning) under-served communities and engaging (disruptive learning) disadvantaged peoples affording them learning experiences. However, the potential benefits of (electronic mobile learning) e-mobile learning have not been well understood from the…

  11. Study of point defect mobilities in zirconium during electron irradiation in a HVEM

    International Nuclear Information System (INIS)

    Griffiths, M.

    1993-01-01

    A high voltage electron microscope (HVEM) was used to investigate the nature of intrinsic point defects in α-Zr by direct observation of dislocation climb and cavity growth or shrinkage. The material used was Marz-grade Zr that had been pre-irradiated with neutrons at about 740 K in the Dounreay Fast Reactor. Dislocation loops of vacancy character that had been produced during the neutron irradiation were studied by further irradiation with electrons in the HVEM. Growth of the loops was observed at temperatures as low as 230 K, indicating that, under the conditions of the experiment, some vacancy-type defects were mobile in the temperature regime 230 K-300 K. The nature of these defects is unknown. One possibility is that these defects are not intrinsic in nature, but may be vacancy-Fe complexes. In addition to the climb of dislocation loops, c-component network dislocations and cavities were also studied. Basal plane climb of the network dislocations was observed at 573 K, but was not readily apparent at 320 K. This suggests that preferred climb planes (and possibly loop habit planes) are sensitive to temperature. Cavities that were already in the foil after neutron irradiation or were induced by electron irradiation grew along the c-axis and shrank along a-directions during electron irradiation. This radiation-induced shape change of the cavities strongly suggests the existence of a diffusional anisotropy difference between interstitials and vacancies in α-Zr. (Author) 14 figs., 22 refs

  12. Electric field dependence of the electron mobility in bulk wurtzite ZnO

    Indian Academy of Sciences (India)

    Electric field dependence of the electron mobility in bulk wurtzite ZnO. K ALFARAMAWI ... tion to ultraviolet light emitters, gas sensors, surface acoustic wave devices and ..... Dorkel J M and Leturcq P H 1981 Solid-State Electron. 24 8211.

  13. 78 FR 56737 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Science.gov (United States)

    2013-09-13

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review an... on the Commission's electronic docket (EDIS) at http://edis.usitc.gov . Hearing-impaired persons are...

  14. 78 FR 49764 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Science.gov (United States)

    2013-08-15

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review n... for this investigation may be viewed on the Commission's electronic docket (EDIS) at http://edis.usitc...

  15. 78 FR 72712 - Certain Portable Electronic Communications Devices, Including Mobile Phones and Components...

    Science.gov (United States)

    2013-12-03

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-885] Certain Portable Electronic Communications Devices, Including Mobile Phones and Components Thereof; Commission Determination Not To Review an... this investigation may be viewed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov...

  16. Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

    Energy Technology Data Exchange (ETDEWEB)

    Chen Feng [Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Euaruksakul, Chanan; Himpsel, F J; Lagally, Max G [University of Wisconsin-Madison, Madison, WI 53706 (United States); Liu Zheng; Liu Feng, E-mail: lagally@engr.wisc.edu [University of Utah, Salt Lake City, UT 84112 (United States)

    2011-08-17

    Strain changes the band structure of semiconductors. We use x-ray absorption spectroscopy to study the change in the density of conduction band (CB) states when silicon is uniaxially strained along the [1 0 0] and [1 1 0] directions. High stress can be applied to silicon nanomembranes, because their thinness allows high levels of strain without fracture. Strain-induced changes in both the sixfold degenerate {Delta} valleys and the eightfold degenerate L valleys are determined quantitatively. The uniaxial deformation potentials of both {Delta} and L valleys are directly extracted using a strain tensor appropriate to the boundary conditions, i.e., confinement in the plane in the direction orthogonal to the straining direction, which correspond to those of strained CMOS in commercial applications. The experimentally determined deformation potentials match the theoretical predictions well. We predict electron mobility enhancement created by strain-induced CB modifications.

  17. The Eindhoven High-Brightness Electron Programme

    NARCIS (Netherlands)

    Brussaard, G.J.H.; Wiel, van der M.J.

    2004-01-01

    The Eindhoven High-Brightness programme is aimed at producing ultra-short intense electron bunches from compact accelerators. The RF electron gun is capable of producing 100 fs electron bunches at 7.5 MeV and 10 pC bunch charge. The DC/RF hybrid gun under development will produce bunches <75 fs at

  18. Intrinsic Electron Mobility Limits in beta-Ga2O3

    OpenAIRE

    Ma, Nan; Tanen, Nicholas; Verma, Amit; Guo, Zhi; Luo, Tengfei; Huili; Xing; Jena, Debdeep

    2016-01-01

    By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in beta-Ga2O3 to lower than 200 cm2/Vs at 300 K for donor doping densities lower than 1018 cm-3. In spite of similar electron effective mass of beta-Ga2O3 to GaN, the electron mobility is 10x lower because of a massive Frohlich interaction, due to the low phonon energies stemming from the crystal structure and stron...

  19. Fundamental limits on the electron mobility of β-Ga2O3.

    Science.gov (United States)

    Kang, Youngho; Krishnaswamy, Karthik; Peelaers, Hartwin; Van de Walle, Chris G

    2017-06-14

    We perform first-principles calculations to investigate the electronic and vibrational spectra and the electron mobility of β-Ga 2 O 3 . We calculate the electron-phonon scattering rate of the polar optical phonon modes using the Vogl model in conjunction with Fermi's golden rule; this enables us to fully take the anisotropic phonon spectra of the monoclinic lattice of β-Ga 2 O 3 into account. We also examine the scattering rate due to ionized impurities or defects using a Yukawa-potential-based model. We consider scattering due to donor impurities, as well as the possibility of compensation by acceptors such as Ga vacancies. We then calculate the room-temperature mobility of β-Ga 2 O 3 using the Boltzmann transport equation within the relaxation time approximation, for carrier densities in the range from 10 17 to 10 20 cm -3 . We find that the electron-phonon interaction dominates the mobility for carrier densities of up to 10 19 cm -3 . We also find that the intrinsic anisotropy in the mobility is small; experimental findings of large anisotropy must therefore be attributed to other factors. We attribute the experimentally observed reduction of the mobility with increasing carrier density to increasing levels of compensation, which significantly affect the mobility.

  20. Fundamental limits on the electron mobility of β-Ga2O3

    Science.gov (United States)

    Kang, Youngho; Krishnaswamy, Karthik; Peelaers, Hartwin; Van de Walle, Chris G.

    2017-06-01

    We perform first-principles calculations to investigate the electronic and vibrational spectra and the electron mobility of β-Ga2O3. We calculate the electron-phonon scattering rate of the polar optical phonon modes using the Vogl model in conjunction with Fermi’s golden rule; this enables us to fully take the anisotropic phonon spectra of the monoclinic lattice of β-Ga2O3 into account. We also examine the scattering rate due to ionized impurities or defects using a Yukawa-potential-based model. We consider scattering due to donor impurities, as well as the possibility of compensation by acceptors such as Ga vacancies. We then calculate the room-temperature mobility of β-Ga2O3 using the Boltzmann transport equation within the relaxation time approximation, for carrier densities in the range from 1017 to 1020 cm-3. We find that the electron-phonon interaction dominates the mobility for carrier densities of up to 1019 cm-3. We also find that the intrinsic anisotropy in the mobility is small; experimental findings of large anisotropy must therefore be attributed to other factors. We attribute the experimentally observed reduction of the mobility with increasing carrier density to increasing levels of compensation, which significantly affect the mobility.

  1. High mobility and high concentration Type-III heterojunction FET

    Science.gov (United States)

    Tsu, R.; Fiddy, M. A.; Her, T.

    2018-02-01

    The PN junction was introduced in transistors by doping, resulting in high losses due to Coulomb scattering from the dopants. The MOSFET introduced carriers in the form of electrons and holes with an applied bias to the oxide barrier, resulting in carrier transfer without doping. This avoids high scattering losses and dominates the IC industries. With heterojunctions having valence-band maxima near and even above the conduction-band minimum in the formation of Type-III superlattices, very useful devices, introduced by Tsu, Sai-Halacz, and Esaki, soon followed. If the layer thicknesses are more than the carrier mean-free-path, incoherent scattering results in the formation of carrier transfer via diffusion instead of opening up new energy gaps. The exploitation of carriers without scattering represents a new and significant opportunity in what we call a Broken Gap Heterojunction FET.

  2. Charge carrier mobility and electronic properties of Al(Op3: impact of excimer formation

    Directory of Open Access Journals (Sweden)

    Andrea Magri

    2015-05-01

    Full Text Available We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olatealuminium(III (Al(Op3 both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op3 into organic thin film transistors (TFTs was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.

  3. Electron and hole drift mobility measurements on methylammonium lead iodide perovskite solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Maynard, Brian; Long, Qi; Schiff, Eric A. [Department of Physics, Syracuse University, Syracuse, New York 13244 (United States); Yang, Mengjin; Zhu, Kai [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Kottokkaran, Ranjith; Abbas, Hisham; Dalal, Vikram L. [Iowa State University, Ames, Iowa 50011 (United States)

    2016-04-25

    We report nanosecond domain time-of-flight measurements of electron and hole photocarriers in methylammonium lead iodide perovskite solar cells. The mobilities ranged from 0.06 to 1.4 cm{sup 2}/Vs at room temperature, but there is little systematic difference between the two carriers. We also find that the drift mobilities are dispersive (time-dependent). The dispersion parameters are in the range of 0.4–0.7, and they imply that terahertz domain mobilities will be much larger than nanosecond domain mobilities. The temperature-dependences of the dispersion parameters are consistent with confinement of electron and hole transport to fractal-like spatial networks within nanoseconds of their photogeneration.

  4. High perveance electron gun for the electron cooling system

    International Nuclear Information System (INIS)

    Korotaev, Yu.; Meshkov, I.; Petrov, A.; Sidorin, A.; Smirnov, A.; Syresin, E.; Titkova, I.

    2000-01-01

    The cooling time in the electron cooling system is inversely proportional to the beam current. To obtain high current of the electron beam the control electrode of the gun is provided with a positive potential and an electrostatic trap for secondary electrons appears inside the electron gun. This leads to a decrease in the gun perveance. To avoid this problem, the adiabatic high perveance electron gun with the clearing control electrode is designed in JINR (J. Bosser, Y. Korotaev, I. Meshkov, E. Syresin et al., Nucl. Instr. and Meth. A 391 (1996) 103. Yu. Korotaev, I. Meshkov, A. Sidorin, A. Smirnov, E. Syresin, The generation of electron beams with perveance of 3-6 μA/V 3/2 , Proceedings of SCHEF'99). The clearing control electrode has a transverse electric field, which clears secondary electrons. Computer simulations of the potential map were made with RELAX3D computer code (C.J. Kost, F.W. Jones, RELAX3D User's Guide and References Manual)

  5. High perveance electron gun for the electron cooling system

    CERN Document Server

    Korotaev, Yu V; Petrov, A; Sidorin, A; Smirnov, A; Syresin, E M; Titkova, I

    2000-01-01

    The cooling time in the electron cooling system is inversely proportional to the beam current. To obtain high current of the electron beam the control electrode of the gun is provided with a positive potential and an electrostatic trap for secondary electrons appears inside the electron gun. This leads to a decrease in the gun perveance. To avoid this problem, the adiabatic high perveance electron gun with the clearing control electrode is designed in JINR (J. Bosser, Y. Korotaev, I. Meshkov, E. Syresin et al., Nucl. Instr. and Meth. A 391 (1996) 103. Yu. Korotaev, I. Meshkov, A. Sidorin, A. Smirnov, E. Syresin, The generation of electron beams with perveance of 3-6 mu A/V sup 3 sup / sup 2 , Proceedings of SCHEF'99). The clearing control electrode has a transverse electric field, which clears secondary electrons. Computer simulations of the potential map were made with RELAX3D computer code (C.J. Kost, F.W. Jones, RELAX3D User's Guide and References Manual).

  6. Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

    Directory of Open Access Journals (Sweden)

    Charith Jayanada Koswaththage

    2016-11-01

    Full Text Available InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.

  7. High level bacterial contamination of secondary school students' mobile phones.

    Science.gov (United States)

    Kõljalg, Siiri; Mändar, Rando; Sõber, Tiina; Rööp, Tiiu; Mändar, Reet

    2017-06-01

    While contamination of mobile phones in the hospital has been found to be common in several studies, little information about bacterial abundance on phones used in the community is available. Our aim was to quantitatively determine the bacterial contamination of secondary school students' mobile phones. Altogether 27 mobile phones were studied. The contact plate method and microbial identification using MALDI-TOF mass spectrometer were used for culture studies. Quantitative PCR reaction for detection of universal 16S rRNA, Enterococcus faecalis 16S rRNA and Escherichia coli allantoin permease were performed, and the presence of tetracycline ( tet A, tet B, tet M), erythromycin ( erm B) and sulphonamide ( sul 1) resistance genes was assessed. We found a high median bacterial count on secondary school students' mobile phones (10.5 CFU/cm 2 ) and a median of 17,032 bacterial 16S rRNA gene copies per phone. Potentially pathogenic microbes ( Staphylococcus aureus , Acinetobacter spp. , Pseudomonas spp., Bacillus cereus and Neisseria flavescens ) were found among dominant microbes more often on phones with higher percentage of E. faecalis in total bacterial 16S rRNA. No differences in contamination level or dominating bacterial species between phone owner's gender and between phone types (touch screen/keypad) were found. No antibiotic resistance genes were detected on mobile phone surfaces. Quantitative study methods revealed high level bacterial contamination of secondary school students' mobile phones.

  8. Electron mobility in supercritical pentanes as a function of density and temperature

    International Nuclear Information System (INIS)

    Itoh, Kengo; Nakagawa, Kazumichi; Nishikawa, Masaru

    1988-01-01

    The excess electron mobility in supercritical n-, iso- and neopentane was measured isothermally as a function of density. The density-normalized mobility μN in all three isomers goes through a minimum at a density below the respective critical densities, and the mobility is quite temperature-dependent in this region, then goes through a minimum. The μN behavior around the minimum in n-pentane is well accounted for by the Cohen-Lekner model with the structure factor S(K) estimated from the speed of sound, while that in iso- and neopentane is not. (author)

  9. Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3

    Directory of Open Access Journals (Sweden)

    Koustav Ganguly

    2017-05-01

    Full Text Available The recently discovered high room temperature mobility in wide band gap semiconducting BaSnO3 is of exceptional interest for perovskite oxide heterostructures. Critical open issues with epitaxial films include determination of the optimal dopant and understanding the mobility-electron density (μ-n relation. These are addressed here through a transport study of BaSnO3(001 films with oxygen vacancy doping controlled via variable temperature vacuum annealing. Room temperature n can be tuned from 5 × 1019 cm−3 to as low as 2 × 1017 cm−3, which is shown to drive a weak- to strong-localization transition, a 104-fold increase in resistivity, and a factor of 28 change in μ. The data reveal μ ∝ n0.65 scaling over the entire n range probed, important information for understanding mobility-limiting scattering mechanisms.

  10. High temperature electronic gain device

    International Nuclear Information System (INIS)

    McCormick, J.B.; Depp, S.W.; Hamilton, D.J.; Kerwin, W.J.

    1979-01-01

    An integrated thermionic device suitable for use in high temperature, high radiation environments is described. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube

  11. Mobile high-voltage switchboard. Variable and uncomplicated; Mobile Hochspannungsschaltanlage. Variabel und unkompliziert in der Anwendung

    Energy Technology Data Exchange (ETDEWEB)

    Albert, Andreas [Siemens AG, Erlangen (Germany). Sector Energy

    2009-07-13

    The mobile high-voltage switchboard ''REE-Movil 2'' for voltages up to 245 kV provides a complete and nearly autonomous switchboard in a container, a solution that has been available in the medium-voltage sector for some time already. It can be used whenever a quick replacement of a switchboard section or a temporary supplement to a switching substation is needed. The container is mounted on a trailer for maximum flexibility and mobility. (orig.)

  12. High mobility and quantum well transistors design and TCAD simulation

    CERN Document Server

    Hellings, Geert

    2013-01-01

    For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

  13. ELECTRONIC SERVICE QUALITY ON MOBILE APPLICATION OF ONLINE TRANSPORTATION SERVICES

    Directory of Open Access Journals (Sweden)

    Abu Amar Fauzi

    2018-04-01

    Full Text Available Penelitian ini memiliki dua tujuan utama. Tujuan pertama adalah untuk menguraikan dimensi kualitas layanan elektronik pada aplikasi mobile layanan transportasi online yaitu Go-Jek, Grab, dan Uber di Indonesia. Tujuan kedua adalah untuk menguji hubungan kualitas layanan elektronik dengan kepuasan konsumen dan niat membeli kembali. Pengumpulan data dari kuesioner online sebanyak 149 responden digunakan untuk meneliti model penelitian. Data responden tersebut kemudian dianalisis menggunakan (PLS-SEM. Hasil penelitian menunjukkan bahwa semua dimensi kualitas layanan elektronik yaitu kualitas informasi, desain aplikasi, metode pembayaran, dan keamanan dan privasi secara positif mempengaruhi kepuasan pelanggan. Sementara itu, kepuasan pelanggan secara signifikan berpengaruh langsung pada niat beli kembali. Selanjutnya, bagian terakhir akan mendiskusikan implikasi praktis dari hasil penelitian.

  14. Finishing of display glass for mobile electronics using 3M Trizact diamond tile abrasive pads

    Science.gov (United States)

    Zheng, Lianbin; Fletcher, Tim; Na, Tee Koon; Sventek, Bruce; Romero, Vince; Lugg, Paul S.; Kim, Don

    2010-10-01

    This paper will describe a new method being used during the finishing of glass displays for mobile electronics including mobile hand held devices and notebook computers. The new method consists of using 3M TrizactTM Diamond Tile Abrasive Pads. TrizactTM Diamond Tile is a structured fixed abrasive grinding technology developed by 3M Company. The TrizactTM Diamond Tile structured abrasive pad consists of an organic (polymeric binder) - inorganic (abrasive mineral, i.e., diamond) composite that is used with a water-based coolant. TrizactTM Diamond Tile technology can be applied in both double and single side grinding applications. A unique advantage of TrizactTM Diamond Tile technology is the combination of high stock removal and low sub-surface damage. Grinding results will be presented for both 9 micron and 20 micron grades of TrizactTM Diamond Tile abrasive pads used to finish several common display glasses including Corning GorillaTM glass and Soda Lime glass.

  15. Development of mobile electronic health records application in a secondary general hospital in Korea.

    Science.gov (United States)

    Choi, Wookjin; Park, Min Ah; Hong, Eunseok; Kim, Sunhyu; Ahn, Ryeok; Hong, Jungseok; Song, Seungyeol; Kim, Tak; Kim, Jeongkeun; Yeo, Seongwoon

    2013-12-01

    The recent evolution of mobile devices has opened new possibilities of providing strongly integrated mobile services in healthcare. The objective of this paper is to describe the decision driver, development, and implementation of an integrated mobile Electronic Health Record (EHR) application at Ulsan University Hospital. This application helps healthcare providers view patients' medical records and information without a stationary computer workstation. We developed an integrated mobile application prototype that aimed to improve the mobility and usability of healthcare providers during their daily medical activities. The Android and iOS platform was used to create the mobile EHR application. The first working version was completed in 5 months and required 1,080 development hours. The mobile EHR application provides patient vital signs, patient data, text communication, and integrated EHR. The application allows our healthcare providers to know the status of patients within and outside the hospital environment. The application provides a consistent user environment on several compatible Android and iOS devices. A group of 10 beta testers has consistently used and maintained our copy of the application, suggesting user acceptance. We are developing the integrated mobile EHR application with the goals of implementing an environment that is user-friendly, implementing a patient-centered system, and increasing the hospital's competitiveness.

  16. Improving crystallization and electron mobility of indium tin oxide by carbon dioxide and hydrogen dual-step plasma treatment

    Science.gov (United States)

    Wang, Fengyou; Du, Rongchi; Ren, Qianshang; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

    2017-12-01

    Obtaining high conductivity indium tin oxide (ITO) films simultaneously with a "soft-deposited" (low temperature, low ions bombardment) and cost-efficient deposition process are critical aspect for versatile photo-electronic devices application. Usually, the low-cost "soft-deposited" process could be achieved via evaporation technique, but with scarifying the conductivity of the films. Here, we show a CO2 and H2 two-step plasma (TSP) post-treatment applied to ITO films prepared by reactive thermal evaporation (RTE), allows to meet the special trade-off between the deposition techniques and the electrical properties. Upon treatment, an increase in electron concentration and electron mobility is observed, which subsequently resulting a low sheet resistivity. The mobility reaches high values of 80.9 cm2/Vs for the TSP treated ∼100 nm thickness samples. From a combination of X-ray photoelectron spectroscopy and opto-electronic measurements, it demonstrated that: during the TSP process, the first-step CO2 plasma treatment could promote the crystallinity of the RTE ITO films. While the electron traps density at grain boundaries of polycrystalline RTE ITO films could be passivated by hydrogen atom during the second-step H2 plasma treatment. These results inspired that the TSP treatment process has significant application prospects owing to the outstanding electrical properties enhancement for "soft-deposited" RTE ITO films.

  17. High energy electron positron physics

    International Nuclear Information System (INIS)

    Ali, A.; Soding, P.

    1987-01-01

    With the termination of the physics program at PETRA in a year from now, and with the start of TRISTAN and the SLC and later LEP, an era of e/sup +/e/sup -/ physics will come to an end and a new one begins. The field is changing from a field of a few specialists, to becoming one of the mainstream efforts of the high energy community. It seems appropriate at this moment to summarize what has been learned over the past years, in a way more useful to any high energy physicist in particular to newcomers in the e/sup +/e/sup -/ field. This is the purpose of the book. This book should be used as a reference for future workers in the field of e/sup +/e/sup -/ interactions. It includes the most relevant data, parametrizations, theoretical background, and a chapter on detectors. Contents: Foreword; Detectors for High Energy e/sup +/e/sup -/ Physics; Lepton Pair Production and Electroweak Parameters; Hadron Production, Strong and Electroweak Properties; tau Physics; Recent Results on the Charm Sector; Bottom Physics; Lifetime Measurements of tau, Charmed and Beauty Hadrons; Υ Spectroscopy; Hadronic Decays of the Υ; Quark and Gluon Fragmentation in the e/sup +/e/sup -/ Continuum; Jet Production and QCD; Two Photon Physics; Search for New Particles

  18. High energy electron multibeam diffraction and imaging

    International Nuclear Information System (INIS)

    Bourret, Alain.

    1980-04-01

    The different theories of dynamical scattering of electrons are firstly reviewed with special reference to their basis and the validity of the different approximations. Then after a short description of the different experimental set ups, structural analysis and the investigation of the optical potential by means of high energy electrons will be surveyed

  19. An Architecture Offering Mobile Pollution Sensing with High Spatial Resolution

    Directory of Open Access Journals (Sweden)

    Oscar Alvear

    2016-01-01

    Full Text Available Mobile sensing is becoming the best option to monitor our environment due to its ease of use, high flexibility, and low price. In this paper, we present a mobile sensing architecture able to monitor different pollutants using low-end sensors. Although the proposed solution can be deployed everywhere, it becomes especially meaningful in crowded cities where pollution values are often high, being of great concern to both population and authorities. Our architecture is composed of three different modules: a mobile sensor for monitoring environment pollutants, an Android-based device for transferring the gathered data to a central server, and a central processing server for analyzing the pollution distribution. Moreover, we analyze different issues related to the monitoring process: (i filtering captured data to reduce the variability of consecutive measurements; (ii converting the sensor output to actual pollution levels; (iii reducing the temporal variations produced by mobile sensing process; and (iv applying interpolation techniques for creating detailed pollution maps. In addition, we study the best strategy to use mobile sensors by first determining the influence of sensor orientation on the captured values and then analyzing the influence of time and space sampling in the interpolation process.

  20. Highly Mobile Students: Educational Problems and Possible Solutions. ERIC/CUE Digest, Number 73.

    Science.gov (United States)

    ERIC Clearinghouse on Urban Education, New York, NY.

    The following two types of student mobility stand out as causing educational problems: (1) inner-city mobility, which is prompted largely by fluctuations in the job market; and (2) intra-city mobility, which is caused by upward mobility or by poverty and homelessness. Most research indicates that high mobility negatively affects student…

  1. High-efficient electron linacs

    International Nuclear Information System (INIS)

    Glavatskikh, K.V.; Zverev, B.V.; Kalyuzhnyj, V.E.; Morozov, V.L.; Nikolaev, S.V.; Plotnikov, S.N.; Sobenin, N.P.; Vovna, V.A.; Gryzlov, A.V.

    1993-01-01

    Comparison analysis of ELA on running and still waves designed for 10 MeV energy and with high efficiency is carried out. It is shown, that from the point of view of dimensions ELA with a still wave or that of a combined type is more preferable. From the point of view of impedance characteristics in any variant with application of magnetron as HF-generator it is necessary to implement special requirements to the accelerating structure if no ferrite isolation is provided in HF-channel. 3 refs., 4 figs., 1 tab

  2. From computational discovery to experimental characterization of a high hole mobility organic crystal.

    KAUST Repository

    Sokolov, Anatoliy N

    2011-08-16

    For organic semiconductors to find ubiquitous electronics applications, the development of new materials with high mobility and air stability is critical. Despite the versatility of carbon, exploratory chemical synthesis in the vast chemical space can be hindered by synthetic and characterization difficulties. Here we show that in silico screening of novel derivatives of the dinaphtho[2,3-b:2\\',3\\'-f]thieno[3,2-b]thiophene semiconductor with high hole mobility and air stability can lead to the discovery of a new high-performance semiconductor. On the basis of estimates from the Marcus theory of charge transfer rates, we identified a novel compound expected to demonstrate a theoretic twofold improvement in mobility over the parent molecule. Synthetic and electrical characterization of the compound is reported with single-crystal field-effect transistors, showing a remarkable saturation and linear mobility of 12.3 and 16 cm(2) V(-1) s(-1), respectively. This is one of the very few organic semiconductors with mobility greater than 10 cm(2) V(-1) s(-1) reported to date.

  3. Calculation and analysis of the mobility and diffusion coefficient of thermal electrons in methane/air premixed flames

    KAUST Repository

    Bisetti, Fabrizio; El Morsli, Mbark

    2012-01-01

    Simulations of ion and electron transport in flames routinely adopt plasma fluid models, which require transport coefficients to compute the mass flux of charged species. In this work, the mobility and diffusion coefficient of thermal electrons

  4. Interface-controlled, high-mobility organic transistors

    NARCIS (Netherlands)

    Jurchescu, Oana D.; Popinciuc, Mihaita; van Wees, Bart J.; Palstra, Thomas T. M.

    2007-01-01

    The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the

  5. High mobility polymer gated organic field effect transistor using zinc ...

    Indian Academy of Sciences (India)

    Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film ... At room temperature, these transistors exhibit p-type conductivity with field-effect ... Keywords. Organic semiconductor; field effect transistor; phthalocyanine; high mobility. ... The evaporation rate was kept at ...

  6. An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride

    International Nuclear Information System (INIS)

    Wang, Shulong; Liu, Hongxia; Song, Xin; Guo, Yulong; Yang, Zhaonian

    2014-01-01

    This paper presents a theoretical analysis of anisotropic transport properties and develops an anisotropic low-field electron analytical mobility model for wurtzite indium nitride (InN). For the different effective masses in the Γ-A and Γ-M directions of the lowest valley, both the transient and steady state transport behaviors of wurtzite InN show different transport characteristics in the two directions. From the relationship between velocity and electric field, the difference is more obvious when the electric field is low in the two directions. To make an accurate description of the anisotropic transport properties under low field, for the first time, we present an analytical model of anisotropic low-field electron mobility in wurtzite InN. The effects of different ionized impurity scattering models on the low-field mobility calculated by Monte Carlo method (Conwell-Weisskopf and Brooks-Herring method) are also considered. (orig.)

  7. 78 FR 63492 - Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof...

    Science.gov (United States)

    2013-10-24

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-847] Certain Electronic Devices, Including Mobile Phones and Tablet Computers, and Components Thereof; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is...

  8. Electric field dependence of the electron mobility in bulk wurtzite ZnO

    Indian Academy of Sciences (India)

    ZnO) material is studied. The low-field electron mobility is calculated as a function of doping concentration and lattice temperature. The results show that above nearly 50 K the electrical conduction is governed by activation through the bulk ...

  9. 77 FR 20847 - Certain Mobile Electronic Devices Incorporating Haptics; Institution of Investigation Pursuant to...

    Science.gov (United States)

    2012-04-06

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-834] Certain Mobile Electronic Devices Incorporating Haptics; Institution of Investigation Pursuant to 19 U.S.C. 1337 AGENCY: U.S. International Trade.... International Trade Commission on February 7, 2012, and an amended complaint was filed with the U.S...

  10. Theory of insulated gate field effect transistor with negative differential electron mobility

    International Nuclear Information System (INIS)

    Furman, A.S.

    1995-09-01

    We study the consequences of negative differential electron mobility in FETs using the field model and the gradual channel approximation. We find that the FET may show convective or absolute instability. The fluctuations growths is governed by diffusion law with negative effective diffusion coefficient. (author). 4 refs, 2 figs

  11. A surface diffuse scattering model for the mobility of electrons in surface charge coupled devices

    International Nuclear Information System (INIS)

    Ionescu, M.

    1977-01-01

    An analytical model for the mobility of electrons in surface charge coupled devices is studied on the basis of the results previously obtained, considering a surface diffuse scattering; the importance of the results obtained for a better understanding of the influence of the fringing field in surface charge coupled devices is discussed. (author)

  12. Transparent, high mobility InGaZnO thin films deposited by PLD

    International Nuclear Information System (INIS)

    Suresh, Arun; Gollakota, Praveen; Wellenius, Patrick; Dhawan, Anuj; Muth, John F.

    2008-01-01

    Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 10 19 carriers/cm 3 depending on the oxygen partial pressure during deposition. Hall mobilities as high as 16 cm 2 /V s were observed. This is approximately an order of magnitude higher than the mobility of amorphous silicon and indicates that InGaO 3 (ZnO) x with x ≤ 5 may be suitable for transparent, thin film transistor applications. Post-deposition annealing was found to strongly influence the carrier concentration while annealing effects on the electron mobility was less influential

  13. Power Dependence of the Electron Mobility Profile in a Hall Thruster

    Science.gov (United States)

    Jorns, Benjamin A.; Hofery, Richard H.; Mikellides, Ioannis G.

    2014-01-01

    The electron mobility profile is estimated in a 4.5 kW commercial Hall thruster as a function of discharge power. Internal measurements of plasma potential and electron temperature are made in the thruster channel with a high-speed translating probe. These measurements are presented for a range of throttling conditions from 150 - 400 V and 0.6 - 4.5 kW. The fluid-based solver, Hall2De, is used in conjunction with these internal plasma parameters to estimate the anomalous collision frequency profile at fixed voltage, 300 V, and three power levels. It is found that the anomalous collision frequency profile does not change significantly upstream of the location of the magnetic field peak but that the extent and magnitude of the anomalous collision frequency downstream of the magnetic peak does change with thruster power. These results are discussed in the context of developing phenomenological models for how the collision frequency profile depends on thruster operating conditions.

  14. High-frequency hearing loss among mobile phone users.

    Science.gov (United States)

    Velayutham, P; Govindasamy, Gopala Krishnan; Raman, R; Prepageran, N; Ng, K H

    2014-01-01

    The objective of this study is to assess high frequency hearing (above 8 kHz) loss among prolonged mobile phone users is a tertiary Referral Center. Prospective single blinded study. This is the first study that used high-frequency audiometry. The wide usage of mobile phone is so profound that we were unable to find enough non-users as a control group. Therefore we compared the non-dominant ear to the dominant ear using audiometric measurements. The study was a blinded study wherein the audiologist did not know which was the dominant ear. A total of 100 subjects were studied. Of the subjects studied 53% were males and 47% females. Mean age was 27. The left ear was dominant in 63%, 22% were dominant in the right ear and 15% did not have a preference. This study showed that there is significant loss in the dominant ear compared to the non-dominant ear (P mobile phone revealed high frequency hearing loss in the dominant ear (mobile phone used) compared to the non dominant ear.

  15. Mobile Arbeitswelten und Soziale Gestaltung: Electronic Mobility: Thesen und Empfehlungen. Vortrag gehalten auf dem Kongress "e-mobility - Mobile Arbeitswelten" 2005, Berlin

    OpenAIRE

    Rump, J.; Balfanz, D.; Porak, A.; Schröter, W.

    2005-01-01

    Die Arbeitswelten der Informations- und Wissensgesellschaft befinden sich bereits seit längerer Zeit im Wandel. Das Internet sowie neue Technologien der Mobiltelefonie und der mobilen Datenübertragung ermöglichen den ubiquitären Einsatz von Lösungen, welche helfen, das Arbeitsleben der Menschen mobil, flexibel und vernetzt zu gestalten. Zugleich wird das (Arbeits-)Leben dadurch jedoch unsteter, unsicherer" und unberechenbarer. Tatsache ist, dass der Einsatz neuer mobiler Technologien die Rahm...

  16. Filters for mobile radio from high Tc ceramic superconductors

    International Nuclear Information System (INIS)

    Peterson, G.E.; Wong, E.; Alford, N.McN.

    1990-01-01

    Mobile radio frequencies lie between 30 MHz and 1,000 MHz. This frequency range is ideal for ceramic high T c superconductors. We have designed Chebyshev, Butterworth and interdigital filters that can employ high T c superconductors in the form of rods, tubes and helices. In general, the performance of these filters at milliwatt power levels is excellent. We will describe fabrication of the superconductors and filter design

  17. The electron mobility and thermoelectric power in InSb at atmospheric and hydrostatic pressures

    International Nuclear Information System (INIS)

    Litwin-Staszewska, E.; Piotrzkowski, R.; Szymanska, W.

    1981-01-01

    First, theoretical calculations of electron mobility and thermoelectric power in n-type InSb are reported at liquid nitrogen and room temperatures. All the scattering mechanisms of importance in InSb are taken into account. The calculations based upon a variational solution of the Boltzmann equation are compared with experimental results over the whole available range of electron concentrations. Good agreement between theoretical and experimental results is obtained using the value of deformation potential constant C = 14.6 eV. Secondly, both, experimental and theoretical investigations are made of mobility in InSb under hydrostatic pressure at 77 K within a wide range of electron concentrations. The smallest electron concentrations obtained by freezing the conduction electrons on the metastable states are of order of 1x10 12 cm -3 . Also for those smallest concentration it is possible to describe theoretically the dependence of mobility on the hydrostatic pressure using the same set of parameters as previously, and assuming some compensation of donors by acceptors. (author)

  18. Electron small polarons and their mobility in iron (oxyhydr)oxide nanoparticles

    DEFF Research Database (Denmark)

    Katz, Jordan E; Zhang, Xiaoyi; Attenkofer, Klaus

    2012-01-01

    Electron mobility within iron (oxyhydr)oxides enables charge transfer between widely separated surface sites. There is increasing evidence that this internal conduction influences the rates of interfacial reactions and the outcomes of redox-driven phase transformations of environmental interest....... To determine the links between crystal structure and charge-transport efficiency, we used pump-probe spectroscopy to study the dynamics of electrons introduced into iron(III) (oxyhydr)oxide nanoparticles via ultrafast interfacial electron transfer. Using time-resolved x-ray spectroscopy and ab initio...

  19. Strain engineering on electronic structure and carrier mobility in monolayer GeP3

    Science.gov (United States)

    Zeng, Bowen; Long, Mengqiu; Zhang, Xiaojiao; Dong, Yulan; Li, Mingjun; Yi, Yougen; Duan, Haiming

    2018-06-01

    Using density functional theory coupled with the Boltzmann transport equation with relaxation time approximation, we have studied the strain effect on the electronic structure and carrier mobility of two-dimensional monolayer GeP3. We find that the energies of valence band maximum and conduction band minimum are nearly linearly shifted with a biaxial strain in the range of  ‑4% to 6%, and the band structure experiences a remarkable transition from semiconductor to metal with the appropriate compression (‑5% strain). Under biaxial strain, the mobility of the electron and hole in monolayer GeP3 reduces and increases by more than one order of magnitude, respectively. It is suggested that it is possible to perform successive transitions from an n-type semiconductor (‑4% strain) to a good performance p-semiconductor (+6% strain) by applying strain in monolayer GeP3, which is potentially useful for flexible electronics and nanosized mechanical sensors.

  20. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    International Nuclear Information System (INIS)

    Vasil’evskii, I. S.; Galiev, G. B.; Klimov, E. A.; Požela, K.; Požela, J.; Jucienė, V.; Sužiedėlis, A.; Žurauskienė, N.; Keršulis, S.; Stankevič, V.

    2011-01-01

    An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In 0.8 Ga 0.2 As/In 0.7 Al 0.3 As metamorphic structure with a high molar fraction of In (0.7–0.8) is as high as 12.3 × 10 3 cm 2 V −1 s −1 at room temperature. An increase in the electron mobility by a factor of 1.1–1.4 is attained upon the introduction of thin (1–3 nm) InAs layers into a quantum well of selectively doped In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructures. A maximal drift velocity attains 2.5 × 10 7 cm/s in electric fields of 2–5 kV/cm. The threshold field F th for the intervalley Γ-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5–3. The effect of two- to threefold decrease in the threshold field F th in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well.

  1. Effect of the hydrostatic pressure on the electron mobility in delta-doped systems

    Energy Technology Data Exchange (ETDEWEB)

    Oubram, O; Mora-Ramos, M E; Gaggero-Sager, L M, E-mail: 1gaggero@uaem.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico)

    2009-05-01

    The influence of hydrostatic pressure on the electron states and low-temperature mobility in n-type GaAs delta-doped single quantum wells is studied. Values of hydrostatic pressure consider are below the so-called GAMMA-X crossover, keeping all attention in the electronic properties at the Brillouin zone center. The effect of the pressure on the electron mobility is described via a relative quantity that is proportional to the ratio between P not = 0 and zero pressure results. Calculation is performed using an analytical description of the potential energy function profile, based on the Thomas-Fermi approach, taking explicitly into account the dependence upon P of the main input parameters: effective masses and dielectric constant. The relative mobility increases for higher values of P. The cases of zero and finite -although small- temperature are studied, showing that the influence of T is mainly to lower the values of the relative mobility in the entire range of P considered. Numerical results are reported for a two-dimensional density of ionized impurities equals to 7.5 x 10{sup 12} cm{sup -2}.

  2. Deep Trek High Temperature Electronics Project

    Energy Technology Data Exchange (ETDEWEB)

    Bruce Ohme

    2007-07-31

    This report summarizes technical progress achieved during the cooperative research agreement between Honeywell and U.S. Department of Energy to develop high-temperature electronics. Objects of this development included Silicon-on-Insulator (SOI) wafer process development for high temperature, supporting design tools and libraries, and high temperature integrated circuit component development including FPGA, EEPROM, high-resolution A-to-D converter, and a precision amplifier.

  3. Compact high-current, subnanosecond electron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Shpak, V G; Shunajlov, S A; Ulmaskulov, M R; Yalandin, M I [Russian Academy of Sciences, Ekaterinburg (Russian Federation). Inst. of Electrophysics; Pegel, I V [Russian Academy of Sciences, Tomsk (Russian Federation). High-Current Electronics Inst.; Tarakanov, V P [Russian Academy of Sciences, Moscow (Russian Federation). High-Temperature Inst.

    1997-12-31

    A compact subnanosecond, high-current electron accelerator producing an annular electron beam of duration up to 300 - 400 ps, energy about 250 keV, and current up to 1 kA has been developed to study transient processes in pulsed power microwave devices. The measuring and recording techniques used to experimentally investigate the dynamics of the beam current pulse and the transformation of the electron energy during the transportation of the beam in a longitudinal magnetic field are described. The experimental data obtained are compared with the predictions of a numerical simulation. (author). 6 figs., 5 refs.

  4. Indolo-naphthyridine-6,13-dione Thiophene Building Block for Conjugated Polymer Electronics: Molecular Origin of Ultrahigh n-Type Mobility

    KAUST Repository

    Fallon, Kealan J.

    2016-10-18

    Herein, we present the synthesis and characterization of four conjugated polymers containing a novel chromophore for organic electronics based on an indigoid structure. These polymers exhibit extremely small band gaps of ∼1.2 eV, impressive crystallinity, and extremely high n-type mobility exceeding 3 cm V s. The n-type charge carrier mobility can be correlated with the remarkably high crystallinity along the polymer backbone having a correlation length in excess of 20 nm. Theoretical analysis reveals that the novel polymers have highly rigid nonplanar geometries demonstrating that backbone planarity is not a prerequisite for either narrow band gap materials or ultrahigh mobilities. Furthermore, the variation in backbone crystallinity is dependent on the choice of comonomer. OPV device efficiencies up to 4.1% and charge photogeneration up to 1000 nm are demonstrated, highlighting the potential of this novel chromophore class in high-performance organic electronics.

  5. Indolo-naphthyridine-6,13-dione Thiophene Building Block for Conjugated Polymer Electronics: Molecular Origin of Ultrahigh n-Type Mobility

    KAUST Repository

    Fallon, Kealan J.; Wijeyasinghe, Nilushi; Manley, Eric F.; Dimitrov, Stoichko D.; Yousaf, Syeda A.; Ashraf, Raja S.; Duffy, Warren; Guilbert, Anne A. Y.; Freeman, David M. E.; Al-Hashimi, Mohammed; Nelson, Jenny; Durrant, James R.; Chen, Lin X.; McCulloch, Iain; Marks, Tobin J.; Clarke, Tracey M.; Anthopoulos, Thomas D.; Bronstein, Hugo

    2016-01-01

    Herein, we present the synthesis and characterization of four conjugated polymers containing a novel chromophore for organic electronics based on an indigoid structure. These polymers exhibit extremely small band gaps of ∼1.2 eV, impressive crystallinity, and extremely high n-type mobility exceeding 3 cm V s. The n-type charge carrier mobility can be correlated with the remarkably high crystallinity along the polymer backbone having a correlation length in excess of 20 nm. Theoretical analysis reveals that the novel polymers have highly rigid nonplanar geometries demonstrating that backbone planarity is not a prerequisite for either narrow band gap materials or ultrahigh mobilities. Furthermore, the variation in backbone crystallinity is dependent on the choice of comonomer. OPV device efficiencies up to 4.1% and charge photogeneration up to 1000 nm are demonstrated, highlighting the potential of this novel chromophore class in high-performance organic electronics.

  6. Mobile marketing for mobile games

    OpenAIRE

    Vu, Giang

    2016-01-01

    Highly developed mobile technology and devices enable the rise of mobile game industry and mobile marketing. Hence mobile marketing for mobile game is an essential key for a mobile game success. Even though there are many articles on marketing for mobile games, there is a need of highly understanding mobile marketing strategies, how to launch a mobile campaign for a mobile game. Besides that, it is essential to understand the relationship between mobile advertising and users behaviours. There...

  7. High-field electron-photon interactions

    International Nuclear Information System (INIS)

    Hartemann, F V.

    1999-01-01

    Recent advances in novel technologies (including chirped-pulse amplification, femtosecond laser systems operating in the TW-PW range, high-gradient rf photoinjectors, and synchronized relativistic electron bunches with subpicosecond durations and THz bandwidths) allow experimentalists to study the interaction of relativistic electrons with ultrahigh-intensity photon fields. Ponderomotive scattering can accelerate these electrons with extremely high gradients in a three-dimensional vacuum laser focus. The nonlinear Doppler shift induced by relativistic radiation pressure in Compton backscattering is shown to yield complex nonlinear spectra which can be modified by using temporal laser pulse shaping techniques. Colliding laser pulses, where ponderomotive acceleration and Compton backscattering are combined, could also yield extremely short wavelength photons. Finally, one expects strong radiative corrections when the Doppler-upshifted laser wavelength approaches the Compton scale. These are discussed within the context of high-field classical electrodynamics, a new discipline borne out of the aforementioned innovations

  8. Determination of the coherence length in high-mobility semiconductor-coupled Josephson weak links

    International Nuclear Information System (INIS)

    Kleinsasser, A.W.

    1991-01-01

    A Nb-InAs-Nb superconductor-semiconductor-superconductor weak link based on a high-mobility homoepitaxial n-InAs film was reported recently [Akazaki, Kawakami, and Nittu J. Appl. Phys. 66, 6121 (1989)]. Measurements of the electron concentration, effective mass, and mobility allowed the coherence length in the normal link to be calculated. The mobility was high enough that the dirty limit was not applicable in the temperature range (∼2--7 K) over which the device critical current was measured. The temperature dependence of the critical current could not be fit by the usual theoretical form, even though an expression for the coherence length was used that should be applicable in both the clean and dirty limits. In this paper is demonstrated an excellent fit to the data, obtained by using the magnitude of the coherence length as a fitting parameter and assuming the dirty limit temperature dependence. This implies a coherence length proportional to T -1/2 but far shorter than that calculated from the known material parameters. It is suggested that a different scaling length may apply in high-mobility devices

  9. Carbon nanotube transistor based high-frequency electronics

    Science.gov (United States)

    Schroter, Michael

    At the nanoscale carbon nanotubes (CNTs) have higher carrier mobility and carrier velocity than most incumbent semiconductors. Thus CNT based field-effect transistors (FETs) are being considered as strong candidates for replacing existing MOSFETs in digital applications. In addition, the predicted high intrinsic transit frequency and the more recent finding of ways to achieve highly linear transfer characteristics have inspired investigations on analog high-frequency (HF) applications. High linearity is extremely valuable for an energy efficient usage of the frequency spectrum, particularly in mobile communications. Compared to digital applications, the much more relaxed constraints for CNT placement and lithography combined with already achieved operating frequencies of at least 10 GHz for fabricated devices make an early entry in the low GHz HF market more feasible than in large-scale digital circuits. Such a market entry would be extremely beneficial for funding the development of production CNTFET based process technology. This talk will provide an overview on the present status and feasibility of HF CNTFET technology will be given from an engineering point of view, including device modeling, experimental results, and existing roadblocks. Carbon nanotube transistor based high-frequency electronics.

  10. DEVELOPING OF ELECTRONIC TEACHING MATERIAL BASED ON MOBILE LEARNING IN THE WAVE SUBJECTS

    Directory of Open Access Journals (Sweden)

    D. H. Rif’ati

    2015-07-01

    Full Text Available In the advanced and modern era, technological sophistication led to learning which initially runs, in which teachers and students meet each other and communicate in the classroom, can be implemented through of information technology. Along with the development of information, where books and teachers who initially as a primary source of learning, are now beginning to experience growth from the internet. Mobile learning defined as mobile devices that are used in the learning process. The wave course is one of subject that must be taken by students of physics education in the third semester. This course emphasizes the concepts of wave were reviewed mathematically and the phenomenon that occurs in everyday life. Mobile learning developed in this study in the form of electronic teaching materials on subjects of waves. The aim of this study was to develop electronic teaching material in the form of mobile learning. The sample of this study is 80 students in the third semester students who are taking waves courses. The results show that mobile learning that has been developed has score 3.8 and included valid criteria. Pada era yang serba maju dan modern, kecanggihan teknologi menyebabkan pembelajaran yang awalnya berjalan satu arah, dimana guru dan siswa saling bertemu dan berkomunikasi di dalam kelas, dapat dilaksanakan melalui bantuan teknologi.informasi. Seiring dengan perkembangan informasi, buku dan guru yang awalnya sebagai sumber belajar utama, saat ini sudah mulai mengalami perkembangan dimana sumber belajar yang berasal dari internet sudah mulai sering dimanfaatkan dalam proses pembelajaran. Mobile larning didefinisikan sebagai perangkat mobile yang dipergunakan dalam proses belajar mengajar. Mata kuliah gelombang sendiri merupakan salah satu mata kuliah yang wajib ditempuh oleh mahasiswa program studi pendidikan fisika semester 3. Mata kuliah ini menekankan pada konsep gelombang yang ditinjau secara matematis dan fenomenanya yang terjadi

  11. Density induced crossover of electron mobilities in fluid C3 hydrocarbons; liquid phase behavior

    International Nuclear Information System (INIS)

    Gee, N.; Freeman, G.R.

    1980-01-01

    At n = 2 x 10 20 mol/cm 3 in the saturated vapors, the density normalized mobility (μn) of electrons equalled 2.4 x 10 23 mol/cmVs in cyclopropane, 1.5 x 10 23 in propane and 5.4 x 10 22 in propene. In cyclopropane and propene μn decreased due to quasilocalization at n > 4 x 10 20 mol/cm 3 . In propane quasilocalization occurred at n > 8 x 10 20 mol/cm 3 . The more extensive quasilocalization in cyclopropane caused mobilities to be lower than those in propane at the same density when the densities were greater than 1.3 x 10 21 mol/cm 3 . In propylene, μn remained below those in the other compounds at all gas densities. In the liquid phase the mobilities were affected more by the changes of temperature than by those of density. The mobilities at a given temperature decreased in the order propane > propene > cyclopropane. It is curious that the electron traps are deeper in cyclopropane than in propene. The energies of both thermal and optical excitation of solvated electrons may be expressed by equations of the form E 0 = E(0) - aT over considerable ranges of temperature T. The thermal value of a/E(0) is 1.7 x 10 -3 K -1 in many hydrocarbons, estimated from the mobilities. The equivalent ratio of the optical parameters also equals 1.7 x 10 -3 K -1 in ethers and in ammonia. (author)

  12. Density dependence of electron mobility in the accumulation mode for fully depleted SOI films

    Energy Technology Data Exchange (ETDEWEB)

    Naumova, O. V., E-mail: naumova@isp.nsc.ru; Zaitseva, E. G.; Fomin, B. I.; Ilnitsky, M. A.; Popov, V. P. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2015-10-15

    The electron mobility µ{sub eff} in the accumulation mode is investigated for undepleted and fully depleted double-gate n{sup +}–n–n{sup +} silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFET). To determine the range of possible values of the mobility and the dominant scattering mechanisms in thin-film structures, it is proposed that the field dependence of the mobility µ{sub eff} be replaced with the dependence on the density N{sub e} of induced charge carriers. It is shown that the dependences µ{sub eff}(N{sub e}) can be approximated by the power functions µ{sub eff}(N{sub e}) ∝ N{sub e}{sup -n}, where the exponent n is determined by the chargecarrier scattering mechanism as in the mobility field dependence. The values of the exponent n in the dependences µ{sub eff}(N{sub e}) are determined when the SOI-film mode near one of its surfaces varies from inversion to accumulation. The obtained results are explained from the viewpoint of the electron-density redistribution over the SOI-film thickness and changes in the scattering mechanisms.

  13. Integration of a mobile-integrated therapy with electronic health records: lessons learned.

    Science.gov (United States)

    Peeples, Malinda M; Iyer, Anand K; Cohen, Joshua L

    2013-05-01

    Responses to the chronic disease epidemic have predominantly been standardized in their approach to date. Barriers to better health outcomes remain, and effective management requires patient-specific data and disease state knowledge be presented in methods that foster clinical decision-making and patient self-management. Mobile technology provides a new platform for data collection and patient-provider communication. The mobile device represents a personalized platform that is available to the patient on a 24/7 basis. Mobile-integrated therapy (MIT) is the convergence of mobile technology, clinical and behavioral science, and scientifically validated clinical outcomes. In this article, we highlight the lessons learned from functional integration of a Food and Drug Administration-cleared type 2 diabetes MIT into the electronic health record (EHR) of a multiphysician practice within a large, urban, academic medical center. In-depth interviews were conducted with integration stakeholder groups: mobile and EHR software and information technology teams, clinical end users, project managers, and business analysts. Interviews were summarized and categorized into lessons learned using the Architecture for Integrated Mobility® framework. Findings from the diverse stakeholder group of a MIT-EHR integration project indicate that user workflow, software system persistence, environment configuration, device connectivity and security, organizational processes, and data exchange heuristics are key issues that must be addressed. Mobile-integrated therapy that integrates patient self-management data with medical record data provides the opportunity to understand the potential benefits of bidirectional data sharing and reporting that are most valuable in advancing better health and better care in a cost-effective way that is scalable for all chronic diseases. © 2013 Diabetes Technology Society.

  14. High Energy Electron Detectors on Sphinx

    Science.gov (United States)

    Thompson, J. R.; Porte, A.; Zucchini, F.; Calamy, H.; Auriel, G.; Coleman, P. L.; Bayol, F.; Lalle, B.; Krishnan, M.; Wilson, K.

    2008-11-01

    Z-pinch plasma radiation sources are used to dose test objects with K-shell (˜1-4keV) x-rays. The implosion physics can produce high energy electrons (> 50keV), which could distort interpretation of the soft x-ray effects. We describe the design and implementation of a diagnostic suite to characterize the electron environment of Al wire and Ar gas puff z-pinches on Sphinx. The design used ITS calculations to model detector response to both soft x-rays and electrons and help set upper bounds to the spurious electron flux. Strategies to discriminate between the known soft x-ray emission and the suspected electron flux will be discussed. H.Calamy et al, ``Use of microsecond current prepulse for dramatic improvements of wire array Z-pinch implosion,'' Phys Plasmas 15, 012701 (2008) J.A.Halbleib et al, ``ITS: the integrated TIGER series of electron/photon transport codes-Version 3.0,'' IEEE Trans on Nuclear Sci, 39, 1025 (1992)

  15. Japanese high school students' usage of mobile phones while cycling.

    Science.gov (United States)

    Ichikawa, Masao; Nakahara, Shinji

    2008-03-01

    To investigate the perception and actual use of mobile phones among Japanese high school students while riding their bicycles, and their experience of bicycle crash/near-crash. A questionnaire survey was carried out at high schools that were, at the time of the survey, commissioned by the National Agency for the Advancement of Sports and Health to conduct school safety research. In the survey, we found that mobile phone use while riding a bicycle was quite common among the students during their commute, but those who have a higher perception of danger in this practice, and those who perceived that this practice is prohibited, were less likely to engage in this practice. Male students and students commuting to school by bicycle only were more likely to have used phones while riding. There was a significant relationship between phone usage while riding a bicycle and the experience of bicycle crash/near-crash, although its causality was not established. Bicycle crash/near-crash experienced while using a phone was less prevalent among the students who had a higher perception of danger in phone usage while riding, students who perceived that this practice is prohibited, and students with a shorter travel time by bicycle during the commute. Since mobile phone use while riding a bicycle potentially increases crash risk among cyclists, student bicycle commuters should be made aware of this risk. Moreover, they should be informed that cyclists' phone usage while riding is prohibited according to the road traffic law.

  16. Social influence model and electronic word of mouth: PC versus mobile internet

    OpenAIRE

    Okazaki, Shintaro

    2009-01-01

    Compared with laptop or desktop computers, mobile devices offer greater flexibility in time and space, thus enabling consumers to be connected online more continually. In addition, their small size, portability and ease of use with location-based capabilities facilitate sending and receiving timely information in the right place. Drawing upon a social influence model proposed by Dholakia et al. (2004), this paper proposes a causal model for consumer participation in electronic ...

  17. Analysis about the development of mobile electronic commerce: An application of production possibility frontier model

    OpenAIRE

    Uesugi, Shiro; Okada, Hitoshi

    2012-01-01

    This study aims to further develop our previous research on production possibility frontier model (PPFM). An application of model to provide analysis on the mobile commerce survey for which data was collected in Japan und Thailand is presented. PPFM looks into the consumer behaviors as the results form the perception on the relationship between Convenience and Privacy Concerns of certain electronic commerce services. From the data of consumer surveys, PPFM is expected to provide practical sol...

  18. Mobile learning and high-lighting language education

    DEFF Research Database (Denmark)

    Vinther, Jane

    Mobile learning and high-profiling language education. The number of students learning a second or foreign language and participating in instruction in languages other than English has been in decline for some time. There seems to be such a general tendency across nations albeit for a variety...... of reasons idiosyncratic to the particular national conditions. This paper gives an account of a diversified national project designed to infuse foreign language learning classes in upper secondary schools in Denmark with renewed enthusiasm through systematically experimenting with the new media by taking...... advantage of the social side in their application. The aim has been to make language classes attractive and relevant and to highlight the attractiveness and fun in learning through web 2.0 and mobile units. The overall project was supported by the Danish ministry of education as well as the individual...

  19. High Performance Electronics on Flexible Silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-09-01

    Over the last few years, flexible electronic systems have gained increased attention from researchers around the world because of their potential to create new applications such as flexible displays, flexible energy harvesters, artificial skin, and health monitoring systems that cannot be integrated with conventional wafer based complementary metal oxide semiconductor processes. Most of the current efforts to create flexible high performance devices are based on the use of organic semiconductors. However, inherent material\\'s limitations make them unsuitable for big data processing and high speed communications. The objective of my doctoral dissertation is to develop integration processes that allow the transformation of rigid high performance electronics into flexible ones while maintaining their performance and cost. In this work, two different techniques to transform inorganic complementary metal-oxide-semiconductor electronics into flexible ones have been developed using industry compatible processes. Furthermore, these techniques were used to realize flexible discrete devices and circuits which include metal-oxide-semiconductor field-effect-transistors, the first demonstration of flexible Fin-field-effect-transistors, and metal-oxide-semiconductors-based circuits. Finally, this thesis presents a new technique to package, integrate, and interconnect flexible high performance electronics using low cost additive manufacturing techniques such as 3D printing and inkjet printing. This thesis contains in depth studies on electrical, mechanical, and thermal properties of the fabricated devices.

  20. High energy electron irradiation of flowable materials

    International Nuclear Information System (INIS)

    Offermann, B.P.

    1975-01-01

    In order to efficiently irradiate a flowable material with high energy electrons, a hollow body is disposed in a container for the material and the material is caused to flow in the form of a thin layer across a surface of the body from or to the interior of the container while the material flowing across the body surface is irradiated. (U.S.)

  1. KEK/NAGOYA/SLAC: Highly polarized electrons

    International Nuclear Information System (INIS)

    Anon.

    1994-01-01

    In the push by the Japanese KEK Laboratory, in collaboration with university groups and overseas laboratories, to develop new techniques for the future Japan electronpositron collider (JLC), a recent achievement is a significant increase in the efficient yield of highly polarized electrons

  2. Thermal decomposition of electronic wastes: Mobile phone case and other parts

    International Nuclear Information System (INIS)

    Molto, Julia; Egea, Silvia; Conesa, Juan Antonio; Font, Rafael

    2011-01-01

    Highlights: → Pyrolysis and combustion of different parts of mobile phones produce important quantities of CO and CO 2 . → Naphthalene is the most abundant PAH obtained in the thermal treatment of mobile phones. → Higher combustion temperature increases the chlorinated species evolved. - Abstract: Pyrolysis and combustion runs at 850 o C in a horizontal laboratory furnace were carried out on different parts of a mobile phone (printed circuit board, mobile case and a mixture of both materials). The analyses of the carbon oxides, light hydrocarbons, polycyclic aromatic hydrocarbons (PAHs), polychlorodibenzo-p-dioxin, polychlorodibenzofurans (PCDD/Fs), and dioxin-like PCBs are shown. Regarding semivolatile compounds, phenol, styrene, and its derivatives had the highest yields. In nearly all the runs the same PAHs were identified, naphthalene being the most common component obtained. Combustion of the printed circuit board produced the highest emission factor of PCDD/Fs, possibly due to the high copper content.

  3. Sows with high milk production had both a high feed intake and high body mobilization

    DEFF Research Database (Denmark)

    Strathe, A. V.; Bruun, T. S.; Hansen, C. F.

    2017-01-01

    Selection for increased litter size have generated hyper-prolific sows that nurses large litters, however limited knowledge is available regarding the connection between milk production, feed intake and body mobilization of these modern sows. The aim of the current study was to determine what...... be explained by a relatively higher proportion of their body reserves being mobilized compared with multiparous sows. The ADG of the litter was positively related by ADFI of the sows, litter size and BW loss and increasing the ADFI with 1 kg/day throughout lactation likely increased the ADG of the litter...... characterized sows with high milk production and nursing large litters, differences between sows of different parities and effects of lactational performance on next reproductive cycle. In total 565 sows (parity 1 to 4) were studied from 7 days before farrowing until weaning. On day 2 postpartum litters were...

  4. Decal Electronics: Printable Packaged with 3D Printing High-Performance Flexible CMOS Electronic Systems

    KAUST Repository

    Sevilla, Galo T.

    2016-10-14

    High-performance complementary metal oxide semiconductor electronics are flexed, packaged using 3D printing as decal electronics, and then printed in roll-to-roll fashion for highly manufacturable printed flexible high-performance electronic systems.

  5. Decal Electronics: Printable Packaged with 3D Printing High-Performance Flexible CMOS Electronic Systems

    KAUST Repository

    Sevilla, Galo T.; Cordero, Marlon D.; Nassar, Joanna M.; Hanna, Amir; Kutbee, Arwa T.; Carreno, Armando Arpys Arevalo; Hussain, Muhammad Mustafa

    2016-01-01

    High-performance complementary metal oxide semiconductor electronics are flexed, packaged using 3D printing as decal electronics, and then printed in roll-to-roll fashion for highly manufacturable printed flexible high-performance electronic systems.

  6. Electronic white cane with GPS radar-based concept as blind mobility enhancement without distance limitation

    Science.gov (United States)

    Halim, Suharsono; Handafiah, Finna; Aprilliyani, Ria; Udhiarto, Arief

    2018-02-01

    The Indonesian Ministry of Social Affairs, in July 2012, informed that the number of blind in Indonesia has been the largest among to the people with other disabilities. The most common tools utilized to help the blind was a conventional cane which has limited features and therefore it was difficult to be used as a mobilization tools. Moreover, the conventional cane cannot assist them or their family when the blind gets lost. In this research, we designed and implemented an electronic white cane with the concept of radar and global positioning system (GPS). The purpose of this research was to design and develop an electronic white cane which can enhance the mobility of the blind without distance coverage limitation. Utilizing ultrasonic sensors as a distance measurement and a servo motor as an actuator, the produced radar system is able to map an area with maximum distance and coverage angle of 5 meters and 180° respectively. The blind senses the obstacle around them from the vibration generated by five vibration motors. The vibration becomes more intense when the obstacle is detected closer. In addition, we implemented a GPS to monitor the blind's position and allow their family to find them easily when the blind need a help. Based on the tests performed, we have successfully developed an electronic white cane that can be a solution to improve the blind's mobility.

  7. Study of electron mobility in small molecular SAlq by transient electroluminescence method

    Science.gov (United States)

    Kumar, Pankaj; Jain, S. C.; Kumar, Vikram; Chand, Suresh; Kamalasanan, M. N.; Tandon, R. P.

    2007-12-01

    The study of electron mobility of bis(2-methyl 8-hydroxyquinoline) (triphenyl siloxy) aluminium (SAlq) by transient electroluminescence (EL) is presented. An EL device is fabricated in bilayer, ITO/N,N'-diphenyl-N, N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD)/SAlq/LiF/Al configuration. The temporal evaluation of the EL with respect to the step voltage pulse is characterized by a delay time followed by a fast initial rise, which is followed by a slower rise. The delay time between the applied electrical pulse and the onset of EL is correlated with the carrier mobility (electron in our case). Transient EL studies for SAlq have been carried out at different temperatures and different applied electric fields. The electron mobility in SAlq is found to be field and temperature dependent and calculated to be 6.9 × 10-7 cm2 V-1 s-1 at 2.5 × 106 V cm-1 and 308 K. The EL decays immediately as the voltage is turned off and does not depend on the amplitude of the applied voltage pulse or dc offset.

  8. High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation

    International Nuclear Information System (INIS)

    Xue Bai-Qing; Wang Sheng-Kai; Han Le; Chang Hu-Dong; Sun Bing; Zhao Wei; Liu Hong-Gang

    2013-01-01

    To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm 2 /V·s are demonstrated on a Ge (111) substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal—oxide—semiconductor (MOS) interface by analyzing the electrical characteristics of HCl- and (NH 4 ) 2 S-passivated samples. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. Gravel Mobility in a High Sand Content Riverbed

    Science.gov (United States)

    Haschenburger, J. K.

    2017-12-01

    In sand-gravel channels, sand may modify gravel transport by changing conditions of entrainment and promoting longer displacements or gravel may inhibit sand transport if concentrated into distinct deposits, which restrict sand supply with consequences for migrating bedform size or form. This study reports on gravel mobility in the lower San Antonio River, Texas, where gravel content in the bed material ranges from about 1% to more than 20%. Sediment transport observations were collected at three U.S. Geological Survey gauging stations by deploying a Helley-Smith sampler with a 0.2 mm mesh bag from which transport rates and mobile grain sizes were determined. The flow rates sampled translate into an annual exceedance expectation from 0.2% to 98%. Gravel transport rates are generally two orders of magnitude smaller than the rates of sand transport. However, the finest gravels are transported at rates on the same order of magnitude as the coarsest sands. At all sites, the 2 and 2.8 mm fractions are transported at the lowest flow rate sampled, suggesting mobility for at least 38% to as much as 98% of the year. Fractions as large as 8 mm are mobilized at flow rates that are expected between 25% and 53% of the year. The largest fractions captured in the sampling (16 to 32 mm) require flows closer to bankfull conditions that occur no more than 0.8% of the year. Results document that some gravel sizes can be frequently transported in low gradient riverbeds with high sand content.

  10. 76 FR 31983 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Portable Music Players, and...

    Science.gov (United States)

    2011-06-02

    ... Devices, Including Mobile Phones, Portable Music Players, and Computers; Notice of Commission... States after importation of certain electronic devices, including mobile phones, portable music players... rendered asserted claim 5 invalid. The ALJ concluded that an industry exists within the United States that...

  11. 76 FR 40930 - In the Matter of Certain Electronic Devices, Including Mobile Phones, Portable Music Players, and...

    Science.gov (United States)

    2011-07-12

    ... Devices, Including Mobile Phones, Portable Music Players, and Computers; Notice of Commission....S.C. 1337) in the importation into the United States, the sale for importation, and the sale within the United States after importation of certain electronic devices, including mobile phones, portable...

  12. Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor.

    Science.gov (United States)

    Hung, Wen-Yi; Chiang, Pin-Yi; Lin, Shih-Wei; Tang, Wei-Chieh; Chen, Yi-Ting; Liu, Shih-Hung; Chou, Pi-Tai; Hung, Yi-Tzu; Wong, Ken-Tsung

    2016-02-01

    A star-shaped 1,3,5-triazine/cyano hybrid molecule CN-T2T was designed and synthesized as a new electron acceptor for efficient exciplex-based OLED emitter by mixing with a suitable electron donor (Tris-PCz). The CN-T2T/Tris-PCz exciplex emission shows a high ΦPL of 0.53 and a small ΔET-S = -0.59 kcal/mol, affording intrinsically efficient fluorescence and highly efficient exciton up-conversion. The large energy level offsets between Tris-PCz and CN-T2T and the balanced hole and electron mobility of Tris-PCz and CN-T2T, respectively, ensuring sufficient carrier density accumulated in the interface for efficient generation of exciplex excitons. Employing a facile device structure composed as ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm), in which the electron-hole capture is efficient without additional carrier injection barrier from donor (or acceptor) molecule and carriers mobilities are balanced in the emitting layer, leads to a highly efficient green exciplex OLED with external quantum efficiency (EQE) of 11.9%. The obtained EQE is 18% higher than that of a comparison device using an exciplex exhibiting a comparable ΦPL (0.50), in which TCTA shows similar energy levels but higher hole mobility as compared with Tris-PCz. Our results clearly indicate the significance of mobility balance in governing the efficiency of exciplex-based OLED. Exploiting the Tris-PCz:CN-T2T exciplex as the host, we further demonstrated highly efficient yellow and red fluorescent OLEDs by doping 1 wt % Rubrene and DCJTB as emitter, achieving high EQE of 6.9 and 9.7%, respectively.

  13. Highly mobile charge-transfer excitons in two-dimensional WS2/tetracene heterostructures

    Science.gov (United States)

    Zhu, Tong; Yuan, Long; Zhao, Yan; Zhou, Mingwei; Wan, Yan; Mei, Jianguo; Huang, Libai

    2018-01-01

    Charge-transfer (CT) excitons at heterointerfaces play a critical role in light to electricity conversion using organic and nanostructured materials. However, how CT excitons migrate at these interfaces is poorly understood. We investigate the formation and transport of CT excitons in two-dimensional WS2/tetracene van der Waals heterostructures. Electron and hole transfer occurs on the time scale of a few picoseconds, and emission of interlayer CT excitons with a binding energy of ~0.3 eV has been observed. Transport of the CT excitons is directly measured by transient absorption microscopy, revealing coexistence of delocalized and localized states. Trapping-detrapping dynamics between the delocalized and localized states leads to stretched-exponential photoluminescence decay with an average lifetime of ~2 ns. The delocalized CT excitons are remarkably mobile with a diffusion constant of ~1 cm2 s−1. These highly mobile CT excitons could have important implications in achieving efficient charge separation. PMID:29340303

  14. Considerations for high-brightness electron sources

    International Nuclear Information System (INIS)

    Jameson, R.A.

    1990-01-01

    Particle accelerators are now used in many areas of physics research and in industrial and medical applications. New uses are being studied to address major societal needs in energy production, materials research, generation of intense beams of radiation at optical and suboptical wavelengths, treatment of various kinds of waste, and so on. Many of these modern applications require a high intensity beam at the desired energy, along with a very good beam quality in terms of the beam confinement, aiming, or focusing. Considerations for ion and electron accelerators are often different, but there are also many commonalties, and in fact, techniques derived for one should perhaps more often be considered for the other as well. We discuss some aspects of high-brightness electron sources here from that point of view. 6 refs

  15. M&E-NetPay: A Micropayment System for Mobile and Electronic Commerce

    Directory of Open Access Journals (Sweden)

    Xiaodi Huang

    2016-08-01

    Full Text Available As an increasing number of people purchase goods and services online, micropayment systems are becoming particularly important for mobile and electronic commerce. We have designed and developed such a system called M&E-NetPay (Mobile and Electronic NetPay. With open interoperability and mobility, M&E-NetPay uses web services to connect brokers and vendors, providing secure, flexible and reliable credit services over the Internet. In particular, M&E-NetPay makes use of a secure, inexpensive and debit-based off-line protocol that allows vendors to interact only with customers, after validating coins. The design of the architecture and protocol of M&E-NetPay are presented, together with the implementation of its prototype in ringtone and wallpaper sites. To validate our system, we have conducted its evaluations on performance, usability and heuristics. Furthermore, we compare our system to the CORBA-based (Common Object Request Broker Architecture off-line micro-payment systems. The results have demonstrated that M&E-NetPay outperforms the .NET-based M&E-NetPay system in terms of performance and user satisfaction.

  16. Quasifree electron mobility by the method of partial waves in liquid hydrocarbons and in fluid argon

    International Nuclear Information System (INIS)

    Vertes, A.

    1983-01-01

    Applicability of the fluctuation model was tested in the case of n-hexane, n-pentane, c-hexane, 2,2-dimethylbutane, 2,2,4,4-tetramethylpentane, iso-octane, and neopentane. In our model, the quasifree electrons have been assumed to be scattered by the conduction state energy fluctuations of the liquid. These fluctuations are, in turn, described as a consequence of density fluctuations. The scattering potential is supposed to be square well like and the cross section is calculated in terms of partial waves. Averages due to the density fluctuations and the electron kinetic energy distribution are determined numerically. Except for the first three materials, the calculation reproduced the experimental mobilities with reasonable values of the square well radius, which is the only fitting parameters. Further extension of the description concerning the density dependence of the low field mobility of fluid argon has been performed. The estimated fluctuation size as a function of density increases monotonically at the minimum of the mobility in accordance with the monotonic behavior of the isothermal compressibility in the same region

  17. Electronics, information, Communication and high technology

    International Nuclear Information System (INIS)

    1999-11-01

    The contents of this book are summary of investigation, investigation system, purpose of investigation, characteristic of this investigation, important studying and development filed, compare of the level of research and development, policy, characteristic of the respondent, a future illustration in 2025 cause of hindrance of realization, propel method of research and development, the prediction of the realization period the result of investigation in electronics, information communication and high technology.

  18. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

    2008-01-01

    The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH 3 :Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH 3 :Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of ∼1.0 nm over 2x2 μm 2 atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 μm/h were achieved. TD densities in the buffers as low as 3x10 9 cm -2 were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz

  19. OBSERVATION OF MAGNETIC DOMAINS IN IRRADIATED TRANSITION METALS BY HIGH VOLTAGE ELECTRON MICROSCOPY

    OpenAIRE

    Ono , F.; Jakubovics , J.; Maeta , H.

    1988-01-01

    The effect of irradiation on the movement of domain walls was studied in ferromagnetic transition metals by using a high voltage electron microscope. In iron, a domain wall became easily movable at a 300 kV irradiation. The mobility was less affected in cobalt, while in nickel the effect was the greatest.

  20. Physics of high intensity nanosecond electron source

    International Nuclear Information System (INIS)

    Herrera-Gomez, A.; Spicer, W.E.

    1993-08-01

    A new high-intensity, short-time electron source is now being used at the Stanford Linear Accelerator Center (SLAC). Using a GaAs negative affinity semiconductor in the construction of the cathode, it is possible to fulfill operation requirements such as peak currents of tens of amperes, peak widths of the order of nanoseconds, hundreds of hours of operation stability, and electron spin polarization. The cathode is illuminated with high intensity laser pulses, and photoemitted electrons constitute the yield. Because of the high currents, some nonlinear effects are present. Very noticeable is the so-called Charge Limit (CL) effect, which consists of a limit on the total charge in each pulse-that is, the total bunch charge stops increasing as the light pulse total energy increases. In this paper, we explain the mechanism of the CL and how it is caused by the photovoltaic effect. Our treatment is based on the Three-Step model of photoemission. We relate the CL to the characteristics of the surface and bulk of the semiconductor, such as doping, band bending, surface vacuum level, and density of surface states. We also discuss possible ways to prevent the Char's Level effect

  1. Electron mobility limited by optical phonons in wurtzite InGaN/GaN core-shell nanowires

    Science.gov (United States)

    Liu, W. H.; Qu, Y.; Ban, S. L.

    2017-09-01

    Based on the force-balance and energy-balance equations, the optical phonon-limited electron mobility in InxGa1-xN/GaN core-shell nanowires (CSNWs) is discussed. It is found that the electrons tend to distribute in the core of the CSNWs due to the strong quantum confinement. Thus, the scattering from first kind of the quasi-confined optical (CO) phonons is more important than that from the interface (IF) and propagating (PR) optical phonons. Ternary mixed crystal and size effects on the electron mobility are also investigated. The results show that the PR phonons exist while the IF phonons disappear when the indium composition x < 0.047, and vice versa. Accordingly, the total electron mobility μ first increases and then decreases with indium composition x, and reaches a peak value of approximately 3700 cm2/(V.s) when x = 0.047. The results also show that the mobility μ increases as increasing the core radius of CSNWs due to the weakened interaction between the electrons and CO phonons. The total electron mobility limited by the optical phonons exhibits an obvious enhancement as decreasing temperature or increasing line electron density. Our theoretical results are expected to be helpful to develop electronic devices based on CSNWs.

  2. Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

    International Nuclear Information System (INIS)

    Ghosh, Krishnendu; Singisetti, Uttam

    2015-01-01

    N-polar GaN channel mobility is important for high frequency device applications. Here, we report theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2DEG) in N-polar GaN quantum well channels with high-k dielectrics. Rode's iterative calculation is used to predict the scattering rate and mobility. Coupling of the GaN plasmon modes with the SO modes is taken into account and dynamic screening is employed under linear polarization response. The effect of SO phonons on 2DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with HfO 2 and ZrO 2 high-k dielectrics is low and limits the total mobility. The SO scattering for SiN dielectric on GaN was found to be negligible due to its high SO phonon energy. Using Al 2 O 3 , the SO phonon scattering does not affect mobility significantly only except the case when the channel is too thin with a low 2DEG density

  3. Highly integrated electronics for the star TPC

    Energy Technology Data Exchange (ETDEWEB)

    Arthur, A.A.; Bieser, F.; Hearn, W.; Kleinfelder, S.; Merrick, T.; Millaud, J.; Noggle, T.; Rai, G.; Ritter, H.G.; Wieman, H. [Lawrence Berkeley Laboratory, CA (United States)

    1991-12-31

    The concept for the STAR TPC front-end electronics is presented and the progress toward the development of a fully integrated solution is described. It is the goal of the R+D program to develop the complete electronics chain for the STAR central TPC detector at RHIC. It is obvious that solutions chosen e.g. for ALEPH are not adequate for the 150000 channels that need to be instrumented for readout. It will be necessary to perform all the signal processing, digitization and multiplexing directly on the detector in order to reduce per channel cost and the amount of cabling necessary to read out the information. We follow the approach chosen by the EOS TPC project, where the readout electronics on the detector consists of an integrated preamplifier, a hybrid shaping amplifier, an integrated switched capacitor array and a highly multiplexed ADC. The STAR electronics will be further integrated so that approximately 16 channels of the preamplifier, the shaper, the analog store and the ADC will be contained in two integrated circuits located directly on the pad plane.

  4. [Design and Implementation of a Mobile Operating Room Information Management System Based on Electronic Medical Record].

    Science.gov (United States)

    Liu, Baozhen; Liu, Zhiguo; Wang, Xianwen

    2015-06-01

    A mobile operating room information management system with electronic medical record (EMR) is designed to improve work efficiency and to enhance the patient information sharing. In the operating room, this system acquires the information from various medical devices through the Client/Server (C/S) pattern, and automatically generates XML-based EMR. Outside the operating room, this system provides information access service by using the Browser/Server (B/S) pattern. Software test shows that this system can correctly collect medical information from equipment and clearly display the real-time waveform. By achieving surgery records with higher quality and sharing the information among mobile medical units, this system can effectively reduce doctors' workload and promote the information construction of the field hospital.

  5. Emerging technologies to power next generation mobile electronic devices using solar energy

    Institute of Scientific and Technical Information of China (English)

    Dewei JIA; Yubo DUAN; Jing LIU

    2009-01-01

    Mobile electronic devices such as MP3, mobile phones, and wearable or implanted medical devices have already or will soon become a necessity in peoples' lives.However, the further development of these devices is restricted not only by the inconvenient charging process of the power module, but also by the soaring prices of fossil fuel and its downstream chain of electricity manipulation.In view of the huge amount of solar energy fueling the world biochemically and thermally, a carry-on electricity harvester embedded in portable devices is emerging as a most noteworthy research area and engineering practice for a cost efficient solution. Such a parasitic problem is intrinsic in the next generation portable devices. This paper is dedicated to presenting an overview of the photovoltaic strategy in the chain as a reference for researchers and practitioners committed to solving the problem.

  6. Application Of Electronic Nose And Ion Mobility Spectrometer To Quality Control Of Spice Mixtures

    International Nuclear Information System (INIS)

    Banach, U.; Tiebe, C.; Huebert, Th.

    2009-01-01

    The aim of the paper is to demonstrate the application of electronic nose (e-nose) and ion mobility spectrometry (IMS) to quality control and to find out product adulteration of spice mixtures. Therefore the gaseous head space phase of four different spice mixtures (spices for sausages and saveloy) was differed from original composition and product adulteration. In this set of experiments metal-oxide type e-nose (KAMINA-type) has been used, and characteristic patterns of data corresponding to various complex odors of the four different spice mixtures were generated. Simultaneously an ion mobility spectrometer was coupled also to an emission chamber for the detection of gaseous components of spice mixtures. The two main methods that have been used show a clear discrimination between the original spice mixtures and product adulteration could be distinguished from original spice mixtures.

  7. One-to-One Mobile Technology in High School Physics Classrooms: Understanding Its Use and Outcome

    Science.gov (United States)

    Zhai, Xiaoming; Zhang, Meilan; Li, Min

    2018-01-01

    This study examined ways in which high school students used mobile devices in physics classrooms and after school, and the impact of in-class and after-school mobile technology use on their physics learning performance and interest. We collected data from 803 high school freshmen in China after they had used mobile devices for over five months. A…

  8. Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

    2018-01-01

    We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

  9. Density and temperature effects on electron mobilities in gaseous, critical and liquid n-hexane, cyclohexane, and cyclopentane

    International Nuclear Information System (INIS)

    Huang, S.S.-S.; Freeman, G.R.

    1978-01-01

    In the low density vapors the density normalized mobilities μn of thermal electrons decreased in the order n-hexane > cyclopentane > cyclohexane. Mobilities in the critical fluids were 16 cm 2 /V s in n-hexane, 23 in cyclohexane, and 22 in cyclopentane. Mobilities in the liquids were independent of field up to the highest value used, which was 1.5 Td in the hexanes and 0.9 Td in cyclopentane. The mobilities and their temperature dependences were interpreted in terms of a model

  10. Effectiveness of mobile electronic devices in weight loss among overweight and obese populations: a systematic review and meta-analysis.

    Science.gov (United States)

    Khokhar, Bushra; Jones, Jessica; Ronksley, Paul E; Armstrong, Marni J; Caird, Jeff; Rabi, Doreen

    2014-01-01

    Mobile electronic devices, such as mobile phones and PDAs, have emerged as potentially useful tools in the facilitation and maintenance of weight loss. While RCTs have demonstrated a positive impact of mobile interventions, the extent to which mobile electronic devices are more effective than usual care methods is still being debated. Electronic databases were systematically searched for RCTs evaluating the effectiveness of mobile electronic device interventions among overweight and obese adults. Weighted mean difference for change in body weight was the primary outcome. The search strategy yielded 559 citations and of the 108 potentially relevant studies, six met the criteria. A total of 632 participants were included in the six studies reporting a mean change in body weight. Using a random-effects model, the WMD for the effect of using mobile electronic devices on reduction in body weight was -1.09 kg (95% CI -2.12, -0.05). When stratified by the type of mobile electronic device used, it suggests that interventions using mobile phones were effective at achieving weight loss, WMD = -1.78 kg (95% CI -2.92, -0.63). This systematic review and meta-analysis suggests that mobile electronic devices have the potential to facilitate weight loss in overweight and obese populations, but further work is needed to understand if these interventions have sustained benefit and how we can make these mHealth tools most effective on a large scale. As the field of healthcare increasingly utilizes novel mobile technologies, the focus must not be on any one specific device but on the best possible use of these tools to measure and understand behavior. As mobile electronic devices continue to increase in popularity and the associated technology continues to advance, the potential for the use of mobile devices in global healthcare is enormous. More RCTs with larger sample sizes need to be conducted to look at the cost-effectiveness, technical and financial feasibility of adapting such m

  11. Thermoelectric transport properties of high mobility organic semiconductors

    Science.gov (United States)

    Venkateshvaran, Deepak; Broch, Katharina; Warwick, Chris N.; Sirringhaus, Henning

    2016-09-01

    Transport in organic semiconductors has traditionally been investigated using measurements of the temperature and gate voltage dependent mobility of charge carriers within the channel of organic field-effect transistors (OFETs). In such measurements, the behavior of charge carrier mobility with temperature and gate voltage, studied together with carrier activation energies, provide a metric to quantify the extent of disorder within these van der Waals bonded materials. In addition to the mobility and activation energy, another potent but often-overlooked transport coefficient useful in understanding disorder is the Seebeck coefficient (also known as thermoelectric power). Fundamentally, the Seebeck coefficient represents the entropy per charge carrier in the solid state, and thus proves powerful in distinguishing materials in which charge carriers move freely from those where a high degree of disorder causes the induced carriers to remain trapped. This paper briefly covers the recent highlights in the field of organic thermoelectrics, showing how significant strides have been made both from an applied standpoint as well as from a viewpoint of fundamental thermoelectric transport physics. It shall be illustrated how thermoelectric transport parameters in organic semiconductors can be tuned over a significant range, and how this tunability facilitates an enhanced performance for heat-to-electricity conversion as well as quantifies energetic disorder and the nature of the density of states (DOS). The work of the authors shall be spotlighted in this context, illustrating how Seebeck coefficient measurements in the polymer indacenodithiophene-co-benzothiadiazole (IDTBT) known for its ultra-low degree of torsion within the polymer backbone, has a trend consistent with low disorder. 1 Finally, using examples of the small molecules C8-BTBT and C10-DNTT, it shall be discussed how the Seebeck coefficient can aid the estimation of the density and distribution of trap states

  12. Extremely high frequency RF effects on electronics.

    Energy Technology Data Exchange (ETDEWEB)

    Loubriel, Guillermo Manuel; Vigliano, David; Coleman, Phillip Dale; Williams, Jeffery Thomas; Wouters, Gregg A.; Bacon, Larry Donald; Mar, Alan

    2012-01-01

    The objective of this work was to understand the fundamental physics of extremely high frequency RF effects on electronics. To accomplish this objective, we produced models, conducted simulations, and performed measurements to identify the mechanisms of effects as frequency increases into the millimeter-wave regime. Our purpose was to answer the questions, 'What are the tradeoffs between coupling, transmission losses, and device responses as frequency increases?', and, 'How high in frequency do effects on electronic systems continue to occur?' Using full wave electromagnetics codes and a transmission-line/circuit code, we investigated how extremely high-frequency RF propagates on wires and printed circuit board traces. We investigated both field-to-wire coupling and direct illumination of printed circuit boards to determine the significant mechanisms for inducing currents at device terminals. We measured coupling to wires and attenuation along wires for comparison to the simulations, looking at plane-wave coupling as it launches modes onto single and multiconductor structures. We simulated the response of discrete and integrated circuit semiconductor devices to those high-frequency currents and voltages, using SGFramework, the open-source General-purpose Semiconductor Simulator (gss), and Sandia's Charon semiconductor device physics codes. This report documents our findings.

  13. High-intensity-laser-electron scattering

    International Nuclear Information System (INIS)

    Meyerhofer, D.D.

    1997-01-01

    In the field of an intense laser, photon-electron scattering becomes nonlinear when the oscillatory energy of the electron approaches its rest mass. The electron wave function is dressed by the field with a concomitant increase in the effective electron mass. When the photon energy in the electron rest frame is comparable to the electron rest mass, multiphoton Compton scattering occurs. When the photon energy is significantly lower than the electron rest mass, the electron acquires momentum from the photon field and emits harmonics. This paper reviews nonlinear photon-electron scattering processes and results from two recent experiments where they have been observed

  14. Molecular origin of differences in hole and electron mobility in amorphous Alq3--a multiscale simulation study.

    Science.gov (United States)

    Fuchs, Andreas; Steinbrecher, Thomas; Mommer, Mario S; Nagata, Yuki; Elstner, Marcus; Lennartz, Christian

    2012-03-28

    In order to determine the molecular origin of the difference in electron and hole mobilities of amorphous thin films of Alq(3) (meridional Alq(3) (tris(8-hydroxyquinoline) aluminium)) we performed multiscale simulations covering quantum mechanics, molecular mechanics and lattice models. The study includes realistic disordered morphologies, polarized site energies to describe diagonal disorder, quantum chemically calculated transfer integrals for the off-diagonal disorder, inner sphere reorganization energies and an approximative scheme for outer sphere reorganization energies. Intermolecular transfer rates were calculated via Marcus-theory and mobilities were simulated via kinetic Monte Carlo simulations and by a Master Equation approach. The difference in electron and hole mobility originates from the different localization of charge density in the radical anion (more delocalized) compared to the radical cation (more confined). This results in higher diagonal disorder for holes and less favourable overlap properties for the hole transfer integrals leading to an overall higher electron mobility.

  15. High-resolution charge carrier mobility mapping of heterogeneous organic semiconductors

    Science.gov (United States)

    Button, Steven W.; Mativetsky, Jeffrey M.

    2017-08-01

    Organic electronic device performance is contingent on charge transport across a heterogeneous landscape of structural features. Methods are therefore needed to unravel the effects of local structure on overall electrical performance. Using conductive atomic force microscopy, we construct high-resolution out-of-plane hole mobility maps from arrays of 5000 to 16 000 current-voltage curves. To demonstrate the efficacy of this non-invasive approach for quantifying and mapping local differences in electrical performance due to structural heterogeneities, we investigate two thin film test systems, one bearing a heterogeneous crystal structure [solvent vapor annealed 5,11-Bis(triethylsilylethynyl)anthradithiophene (TES-ADT)—a small molecule organic semiconductor] and one bearing a heterogeneous chemical composition [p-DTS(FBTTh2)2:PC71BM—a high-performance organic photovoltaic active layer]. TES-ADT shows nearly an order of magnitude difference in hole mobility between semicrystalline and crystalline areas, along with a distinct boundary between the two regions, while p-DTS(FBTTh2)2:PC71BM exhibits subtle local variations in hole mobility and a nanoscale domain structure with features below 10 nm in size. We also demonstrate mapping of the built-in potential, which plays a significant role in organic light emitting diode and organic solar cell operation.

  16. Electronics for very high rate tracking detectors

    International Nuclear Information System (INIS)

    Williams, H.H.; Dressnandt, N.; Ekenberg, T.; Gerds, E.J.; Newcomer, F.M.; Tedja, S.; Van Berg, R.; Van der Speigel, J.

    1995-01-01

    Results are presented on a system of electronics designed for very high rate tracking detectors at the SSC and LHC. The primary goal was a system for signal detection, time measurement, and readout for the straw tracker for SDC. An integrated circuit incorporating eight channels of amplifier-shaper-discriminator (including detector tail cancellation), and two different integrated circuits for time measurement are described. The performance of tracking measurements up to counting rates of 8 MHz per wire is reported, as well as preliminary results from a baseline restoration circuit. (orig.)

  17. How Does School Mobility Impact Indicators of Academic Achievement for Highly Mobile Students?

    Science.gov (United States)

    Tanner-McBrien, Laura

    2010-01-01

    Children who are homeless or in foster care change schools more often than their non-mobile peers. The impact of school mobility increases their risk of academic failure (Evans, 1996; Ingersoll, Scamman, & Eckerling, 1989; Mao, 1997, Mehana & Reynolds, 2003; Reynolds & Wolf, 1999). Laws enforcing the right of students to remain in…

  18. Exploring the factors that influence physician technostress from using mobile electronic medical records.

    Science.gov (United States)

    Liu, Chung-Feng; Cheng, Tain-Junn; Chen, Chin-Tung

    2017-10-25

    This paper proposes an integrated model for investigating how physicians' perceived individual and technology characteristics affect their technological stress (technostress) that is derived from using mobile electronic medical records (MEMRs). Individual characteristics comprise constructs of mobile self-efficacy and technology dependence, whereas perceived technology characteristics comprise constructs of perceived usefulness, complexity, and reliability. We employed the survey method to collect 158 valid questionnaires from physicians working at three branch hospitals to determine perceptions regarding MEMRs, yielding a response rate of 33.62%. Partial least squares, a structural equation modeling technique, was used for model examination and hypothesis testing. The results show that physicians have a low perception of MEMR dependence and technostress. Furthermore, physicians' perceived MEMR technology dependency, mobile self-efficacy, and complexity were proven to significantly affect physician technostress when using MEMRs, whereas perceived usefulness and reliability were not. The explanatory power of the research model reached 67.8%. The results of this study provide valuable insights and significant knowledge for technostress in health care, particularly from academic and practical perspectives.

  19. Technical report of electronics shop characteristics of high speed electronics component, (1)

    International Nuclear Information System (INIS)

    Watanabe, Shin-ichi; Shiino, Kazuo.

    1975-01-01

    We must develop electronics circuits for high speed signals. The electronics components of the circuits make use of the special components. This report treats a pulse response of the electronics components (i.e. coaxial cable, connector, resistor, capacitor, diode, transistor) for high speed electronics. The results of this report was already applied constructions of high speed electronics circuits and experimental equipments of the High Energy Physics Division. (auth.)

  20. Hemoadsorption of high-mobility-group box 1 using a porous polymethylmethacrylate fiber in a swine acute liver failure model.

    Science.gov (United States)

    Amemiya, Ryusuke; Shinoda, Masahiro; Yamada, Masayuki; Ueno, Yoshiyuki; Shimada, Kaoru; Fujieda, Hiroaki; Yagi, Hiroshi; Mizota, Takamasa; Nishiyama, Ryo; Oshima, Go; Yamada, Shingo; Matsubara, Kentaro; Abe, Yuta; Hibi, Taizo; Kitago, Minoru; Obara, Hideaki; Itano, Osamu; Kitagawa, Yuko

    2018-04-01

    High-mobility-group box chromosomal protein 1 has been identified as an important mediator of various kinds of acute and chronic inflammation. In this study, we aimed to develop a column that effectively adsorbs high-mobility-group box chromosomal protein 1 by altering the pore size of the fiber. First, we produced three types of porous polymethylmethacrylate fiber by altering the concentration of polymethylmethacrylate dissolved in dimethylsulfoxide. We then selected a fiber based on the results of an in vitro incubation test of high-mobility-group box chromosomal protein 1 adsorption. Using the selected fiber, we constructed a new column and tested its high-mobility-group box chromosomal protein 1 adsorption capacity during 4-h extracorporeal hemoperfusion in a swine acute liver failure model. Electron microscope observation showed that the three types of fibers had different pore sizes on the surface and in cross section, which were dependent on the concentration of polymethylmethacrylate. In the in vitro incubation test, fiber with moderate-sized pores demonstrated the highest adsorption capacity. In the in vivo hemoperfusion study, the ratio of the high-mobility-group box chromosomal protein 1 concentration at the outlet versus the inlet of the column was significantly lower with the new column than with the control column during 4-h extracorporeal hemoperfusion. The normalized plasma level of high-mobility-group box chromosomal protein 1 at 12 h after the completion of hemoperfusion was significantly lower with the new column than with the control column. The newly developed polymethylmethacrylate column adsorbs high-mobility-group box chromosomal protein 1 during hemoperfusion in swine ALF model.